High-efficiency neutron detectors and methods of making same

DOEpatents

McGregor, Douglas S.; Klann, Raymond

2007-01-16

Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as ¹⁰B or ⁶LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.

Radially polarized conical beam from an embedded etched fiber.

PubMed

Kalaidji, Djamel; Spajer, Michel; Marthouret, Nadège; Grosjean, Thierry

2009-06-15

We propose a method for producing a conical beam based on the lateral refraction of the TM(01) mode from a two-mode fiber after chemical etching of the cladding, and for controlling its radial polarization. The whole power of the guided mode is transferred to the refracted beam with low diffraction. Polarization control by a series of azimuthal detectors and a stress controller affords the transmission of a stabilized radial polarization through an optical fiber. A solid component usable for many applications has been obtained.

Development of a Scintillation Detector and the Influence on Clinical Imaging

NASA Astrophysics Data System (ADS)

Panetta, Joseph Vincent

The detector is the functional unit within a Positron Emission Tomography (PET) scanner, serving to convert the energy of radiation emitted from a patient into positional information, and as such contributes significantly to the performance of the scanner. Excellent spatial resolution in continuous detectors that are thick has proven difficult to achieve using simple positioning algorithms, leading to research in the field to improve performance. This thesis aims to investigate the effect of modifications to the scintillation light spread within the bulk of the scintillator to improve performance, focusing on the use of laser induced optical barriers (LIOBs) etched within thick continuous crystals, and furthermore aims to translate the effect on detector performance to scanner quantitation in patient studies. The conventional continuous detector is first investigated by analyzing the various components of the detector as well as its limitations. It is seen that the performance of the detector is affected by a number of variables that either cannot be improved or may be improved only at the expense of greater complexity or computing time; these include the photodetector, the positioning algorithm, and Compton scatter in the detector. The performance of the detectors, however, is fundamentally determined by the light spread within the detector, and limited by the depth-dependence of the light spread and poor performance in the entrance region, motivating efforts to modify this aspect of the detector. The feasibility and potential of LIOBs to fine-tune this light spread and improve these limitations is then studied using both experiments and simulations. The behavior of the LIOBs in response to optical light is investigated, and the opacity of the etchings is shown to be dependent on the parameters of the etching procedure. Thick crystals were also etched with LIOBs in their entrance region in a grid pattern in order to improve the resolution in the entrance region. Measurements show an overall improvement in spatial resolution: the resolution in the etched region of the crystals is slightly improved (e.g., 0.8mm for a 25mm thick crystal), though in the unetched region, it is slightly degraded (e.g., 0.4mm for a 25mm thick crystal). While the depth-dependence of the response of the crystal is decreased, the depth-of-interaction (DOI) performance is degraded as well. Simulation studies informed by these measurements show that the properties of the LIOBs strongly affect the performance of the crystal, and ultimately further illustrate that trade-offs in spatial resolution, position sampling, and DOI resolution are inherent in varying the light spread using LIOBs in this manner; these may be used as a guide for future experiments. System Monte Carlo simulations were used to investigate the added benefit of improved detector spatial resolution and position sampling to the imaging performance of a whole-body scanner. These simulations compared the performance of scanners composed of conventional pixelated detectors to that of scanners using continuous crystals. Results showed that the improved performance (relative to that of 4-mm pixelated detectors) of continuous crystals with a 2-mm resolution, pertinent to both the etched 14mm thick crystal studied as well as potential designs with the etched 25mm thick crystal, increased the mean contrast recovery coefficient (CRC) of images by 22% for 5.5mm spheres. Last, a set of experiments aimed to test the correspondence between quantification in phantom and patient images using a lesion embedding methodology, so that any improvements determined using phantom studies may be understood clinically. The results show that the average CRC values for lesions embedded in the lung and liver agree well with those for lesions embedded in the phantom for all lesion sizes. In addition, the relative changes in CRC resulting from application of post-filters on the subject and phantom images are consistent within measurement uncertainty. This study shows that the improvements in CRC resulting from improved spatial resolution, measured using phantom studies in the simulations, are representative of improvements in quantitative accuracy in patient studies. While unmodified thick continuous detectors hold promise for both improved image quality and quantitation in whole-body imaging, excellent performance requires intensive hardware and computational solutions. Laser induced optical barriers offer the ability to modify the light spread within the scintillator to improve the intrinsic performance of the detector: while measurements with crystals etched with relatively transmissive etchings show a slight improvement in resolution, simulations show that the LIOBs may be fine-tuned to result in improved performance using relatively simple positioning algorithms. For systems in which DOI information is less important, and transverse resolution and sensitivity are paramount, etching thick detectors with this design, fine-tuned to the particular thickness of the crystal and application, is an interesting alternative to the standard detector design. (Abstract shortened by ProQuest.).

Instrument performance of a radon measuring system with the alpha-track detection technique.

PubMed

Tokonami, S; Zhuo, W; Ryuo, H; Yonehara, H; Yamada, Y; Shimo, M

2003-01-01

An instrument performance test has been carried out for a radon measuring system made in Hungary. The system measures radon using the alpha-track detection technique. It consists of three parts: the passive detector, the etching unit and the evaluation unit. A CR-39 detector is used as the radiation detector. Alpha-track reading and data analysis are carried out after chemical etching. The following subjects were examined in the present study: (1) radon sensitivity, (2) performance of etching and evaluation processes and (3) thoron sensitivity. The radon sensitivity of 6.9 x 10(-4) mm(-2) (Bq m(-3) d)(-1) was acceptable for practical application. The thoron sensitivity was estimated to be as low as 3.3 x 10(-5) mm(-2) (Bq m(-3) d)(-1) from the experimental study.

An Easy to Manufacture Micro Gas Preconcentrator for Chemical Sensing Applications.

PubMed

McCartney, Mitchell M; Zrodnikov, Yuriy; Fung, Alexander G; LeVasseur, Michael K; Pedersen, Josephine M; Zamuruyev, Konstantin O; Aksenov, Alexander A; Kenyon, Nicholas J; Davis, Cristina E

2017-08-25

We have developed a simple-to-manufacture microfabricated gas preconcentrator for MEMS-based chemical sensing applications. Cavities and microfluidic channels were created using a wet etch process with hydrofluoric acid, portions of which can be performed outside of a cleanroom, instead of the more common deep reactive ion etch process. The integrated heater and resistance temperature detectors (RTDs) were created with a photolithography-free technique enabled by laser etching. With only 28 V DC (0.1 A), a maximum heating rate of 17.6 °C/s was observed. Adsorption and desorption flow parameters were optimized to be 90 SCCM and 25 SCCM, respectively, for a multicomponent gas mixture. Under testing conditions using Tenax TA sorbent, the device was capable of measuring analytes down to 22 ppb with only a 2 min sample loading time using a gas chromatograph with a flame ionization detector. Two separate devices were compared by measuring the same chemical mixture; both devices yielded similar peak areas and widths (fwhm: 0.032-0.033 min), suggesting reproducibility between devices.

Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2018-02-01

Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

Accelerating CR-39 Track Detector Processing by Utilizing UV

NASA Astrophysics Data System (ADS)

Sparling, Jonathan; Padalino, Stephen; McLean, James; Sangster, Craig; Regan, Sean

2017-10-01

The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C, producing micron-scale signal pits at the nuclear track sites. It has been shown that illuminating CR-39 with UV light prior to etching increases bulk and track etch rates, especially when combined with elevated temperature. Spectroscopic analysis for amorphous solids has helped identify which UV wavelengths are most effective at enhancing etch rates. Absorption peaks found in the near infrared range provide for efficient sample heating, and may allow targeting cooperative IR-UV chemistry. Avoiding UV induced noise can be achieved through variations in absorption depths with wavelength. Vacuum drying and water absorption tests allow measurement of the resulting variation of bulk etch rate with depth. Funded in part by the NSF and an Department of Energy Grant through the Lab of Laser Energetics.

Development of a high efficiency personal/environmental radon dosimeter using polycarbonate detectors.

PubMed

Taheri, M; Jafarizadeh, M; Baradaran, S; Zainali, Gh

2006-12-01

Passive radon dosimeters, based on alpha particle etched track detectors, are widely used for the assessment of radon exposure. These methods are often applied in radon dosimetry for long periods of time. In this research work, we have developed a highly efficient method of personal/environmental radon dosimetry that is based upon the detection of alpha particles from radon daughters, (218)Po and (214)Po, using a polycarbonate detector (PC). The radon daughters are collected on the filter surface by passing a fixed flow of air through it and the PC detector, placed at a specified distance from the filter, is simultaneously exposed to alpha particles. After exposure, the latent tracks on the detector are made to appear by means of an electrochemical etching process; these are proportional to the radon dose. The air flow rate and the detector-filter distance are the major factors that can affect the performance of the dosimeter. The results obtained in our experimental investigations have shown that a distance of 1.5 cm between the detector and the filter, an absorber layer of Al with a thickness of 12 microm and an air flow rate of 4 l min(-1) offer the best design parameters for a high efficiency radon dosimeter. Then, the designed dosimeter was calibrated against different values of radon exposures and the obtained sensitivity was found to be 2.1 (tracks cm(-2)) (kBq h m(-3))(-1). The most important advantages of this method are that it is reliable, fast and convenient when used for radon dose assessment. In this paper, the optimized parameters of the dosimeter structure and its calibration procedure are presented and discussed.

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

NASA Astrophysics Data System (ADS)

Rinderknecht, H. G.; Rojas-Herrera, J.; Zylstra, A. B.; Frenje, J. A.; Gatu Johnson, M.; Sio, H.; Sinenian, N.; Rosenberg, M. J.; Li, C. K.; Séguin, F. H.; Petrasso, R. D.; Filkins, T.; Steidle, Jeffrey A.; Steidle, Jessica A.; Traynor, N.; Freeman, C.

2015-12-01

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1-100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protons with energies in the range 0.5-9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. The impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinderknecht, H. G.; Rojas-Herrera, J.; Zylstra, A. B.

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1–100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protonsmore » with energies in the range 0.5–9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. Furthermore, the impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.« less

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinderknecht, H. G., E-mail: rinderknecht1@llnl.gov; Rojas-Herrera, J.; Zylstra, A. B.

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1–100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protonsmore » with energies in the range 0.5–9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. The impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.« less

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

DOE PAGES

Rinderknecht, H. G.; Rojas-Herrera, J.; Zylstra, A. B.; ...

2015-12-23

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1–100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protonsmore » with energies in the range 0.5–9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. Furthermore, the impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.« less

Characterization of CdTe and (CdZn)Te detectors with different metal contacts

NASA Astrophysics Data System (ADS)

Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

2013-09-01

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

NASA Technical Reports Server (NTRS)

Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

1997-01-01

A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

Characterization of Low Noise TES Detectors Fabricated by D-RIE Process for SAFARI Short-Wavelength Band

NASA Astrophysics Data System (ADS)

Khosropanah, P.; Suzuki, T.; Hijmering, R. A.; Ridder, M. L.; Lindeman, M. A.; Gao, J.-R.; Hoevers, H.

2014-08-01

SRON is developing TES detectors based on a superconducting Ti/Au bilayer on a suspended SiN membrane for the short-wavelength band of the SAFARI instrument on SPICA mission. We have recently replaced the wet KOH etching of the Si substrate by deep reactive ion etching. The new process enables us to fabricate the detectors on the substrate and release the membrane at the very last step. Therefore the production of SAFARI large arrays (4343) on thin SiN membrane (250 nm) is feasible. It also makes it possible to realize narrow supporting SiN legs of 1 m, which are needed to meet SAFARI NEP requirements. Here we report the current-voltage characteristics, noise performance and impedance measurement of these devices. The measured results are then compared with the distributed leg model that takes into account the thermal fluctuation noise due to the SiN legs. We measured a dark NEP of 0.7 aW/, which is 1.6 times higher than the theoretically expected phonon noise.

Taheri-Saramad x-ray detector (TSXD): a novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane.

PubMed

Taheri, A; Saramad, S; Ghalenoei, S; Setayeshi, S

2014-01-01

A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

Track analysis of laser-illuminated etched track detectors using an opto-digital imaging system

NASA Astrophysics Data System (ADS)

Eghan, Moses J.; Buah-Bassuah, Paul K.; Oppon, Osborne C.

2007-11-01

An opto-digital imaging system for counting and analysing tracks on a LR-115 detector is described. One batch of LR-115 track detectors was irradiated with Am-241 for a determined period and distance for linearity test and another batch was exposed to radon gas. The laser-illuminated etched track detector area was imaged, digitized and analysed by the system. The tracks that were counted on the opto-digital system with the aid of media cybernetics software as well as spark gap counter showed comparable track density results ranging between 1500 and 2750 tracks cm-2 and 65 tracks cm-2 in the two different batch detector samples with 0.5% and 1% track counts, respectively. Track sizes of the incident alpha particles from the radon gas on the LR-115 detector demonstrating different track energies are statistically and graphically represented. The opto-digital imaging system counts and measures other track parameters at an average process time of 3-5 s.

High throughput on-chip analysis of high-energy charged particle tracks using lensfree imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Wei; Shabbir, Faizan; Gong, Chao

2015-04-13

We demonstrate a high-throughput charged particle analysis platform, which is based on lensfree on-chip microscopy for rapid ion track analysis using allyl diglycol carbonate, i.e., CR-39 plastic polymer as the sensing medium. By adopting a wide-area opto-electronic image sensor together with a source-shifting based pixel super-resolution technique, a large CR-39 sample volume (i.e., 4 cm × 4 cm × 0.1 cm) can be imaged in less than 1 min using a compact lensfree on-chip microscope, which detects partially coherent in-line holograms of the ion tracks recorded within the CR-39 detector. After the image capture, using highly parallelized reconstruction and ion track analysis algorithms running on graphics processingmore » units, we reconstruct and analyze the entire volume of a CR-39 detector within ∼1.5 min. This significant reduction in the entire imaging and ion track analysis time not only increases our throughput but also allows us to perform time-resolved analysis of the etching process to monitor and optimize the growth of ion tracks during etching. This computational lensfree imaging platform can provide a much higher throughput and more cost-effective alternative to traditional lens-based scanning optical microscopes for ion track analysis using CR-39 and other passive high energy particle detectors.« less

Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)

NASA Astrophysics Data System (ADS)

Sun, Jason N.; Choi, Kwong-Kit; Olver, Kimberley A.; Fu, Richard X.

2017-05-01

Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga1-xAlxAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Ionizing Radiation Detector

DOEpatents

Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

2003-11-18

A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water after attaching electrical contacts to the crystal surface.

Image processing analysis of nuclear track parameters for CR-39 detector irradiated by thermal neutron

NASA Astrophysics Data System (ADS)

Al-Jobouri, Hussain A.; Rajab, Mustafa Y.

2016-03-01

CR-39 detector which covered with boric acid (H3Bo3) pellet was irradiated by thermal neutrons from (241Am - 9Be) source with activity 12Ci and neutron flux 105 n. cm-2. s-1. The irradiation times -TD for detector were 4h, 8h, 16h and 24h. Chemical etching solution for detector was sodium hydroxide NaOH, 6.25N with 45 min etching time and 60 C˚ temperature. Images of CR-39 detector after chemical etching were taken from digital camera which connected from optical microscope. MATLAB software version 7.0 was used to image processing. The outputs of image processing of MATLAB software were analyzed and found the following relationships: (a) The irradiation time -TD has behavior linear relationships with following nuclear track parameters: i) total track number - NT ii) maximum track number - MRD (relative to track diameter - DT) at response region range 2.5 µm to 4 µm iii) maximum track number - MD (without depending on track diameter - DT). (b) The irradiation time -TD has behavior logarithmic relationship with maximum track number - MA (without depending on track area - AT). The image processing technique principally track diameter - DT can be take into account to classification of α-particle emitters, In addition to the contribution of these technique in preparation of nano- filters and nano-membrane in nanotechnology fields.

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

NASA Technical Reports Server (NTRS)

1987-01-01

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

Fabrication of large dual-polarized multichroic TES bolometer arrays for CMB measurements with the SPT-3G camera

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posada, C. M.; Ade, P. A. R.; Ahmed, Z.

2015-08-11

This work presents the procedures used by Argonne National Laboratory to fabricate large arrays of multichroic transition-edge sensor (TES) bolometers for cosmic microwave background (CMB) measurements. These detectors will be assembled into the focal plane for the SPT-3G camera, the third generation CMB camera to be installed in the South Pole Telescope. The complete SPT-3G camera will have approximately 2690 pixels, for a total of 16,140 TES bolometric detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a Nb microstrip line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed tomore » the respective Ti/Au TES bolometers. There are six TES bolometer detectors per pixel, which allow for measurements of three band-passes (95 GHz, 150 GHz and 220 GHz) and two polarizations. The steps involved in the monolithic fabrication of these detector arrays are presented here in detail. Patterns are defined using a combination of stepper and contact lithography. The misalignment between layers is kept below 200 nm. The overall fabrication involves a total of 16 processes, including reactive and magnetron sputtering, reactive ion etching, inductively coupled plasma etching and chemical etching.« less

Light scattering apparatus and method for determining radiation exposure to plastic detectors

DOEpatents

Hermes, Robert E.

2002-01-01

An improved system and method of analyzing cumulative radiation exposure registered as pits on track etch foils of radiation dosimeters. The light scattering apparatus and method of the present invention increases the speed of analysis while it also provides the ability to analyze exposure levels beyond that which may be properly measured with conventional techniques. Dosimeters often contain small plastic sheets that register accumulated damage when exposed to a radiation source. When the plastic sheet from the dosimeter is chemically etched, a track etch foil is produced wherein pits or holes are created in the plastic. The number of these pits, or holes, per unit of area (pit density) correspond to the amount of cumulative radiation exposure which is being optically measured by the apparatus. To measure the cumulative radiation exposure of a track etch foil a high intensity collimated beam is passed through foil such that the pits and holes within the track etch foil cause a portion of the impinging light beam to become scattered upon exit. The scattered light is focused with a lens, while the primary collimated light beam (unscattered light) is blocked. The scattered light is focused by the lens onto an optical detector capable of registering the optical power of the scattered light which corresponds to the cumulative radiation to which the track etch foil has been exposed.

Fabrication of superconducting nanowire single-photon detectors by nonlinear femtosecond optical lithography

NASA Astrophysics Data System (ADS)

Minaev, N. V.; Tarkhov, M. A.; Dudova, D. S.; Timashev, P. S.; Chichkov, B. N.; Bagratashvili, V. N.

2018-02-01

This paper describes a new approach to the fabrication of superconducting nanowire single-photon detectors from ultrathin NbN films on SiO2 substrates. The technology is based on nonlinear femtosecond optical lithography and includes direct formation of the sensitive element of the detector (the meander) through femtosecond laser exposure of the polymethyl methacrylate resist at a wavelength of 525 nm and subsequent removal of NbN using plasma-chemical etching. The nonlinear femtosecond optical lithography method allows the formation of planar structures with a spatial resolution of ~50 nm. These structures were used to fabricate single-photon superconducting detectors with quantum efficiency no worse than 8% at a wavelength of 1310 nm and dark count rate of 10 s-1 at liquid helium temperature.

Superlattice Barrier Infrared Detector Development at the Jet Propulsion Laboratory

NASA Technical Reports Server (NTRS)

Ting, David Z.; Soibel, Alexander; Rafol, Sir B.; Nguyen, Jean; Hoglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Liu, John K.; Mumolo, Jason M.

2011-01-01

We report recent efforts in achieving state-of-the-art performance in type-II superlattice based infrared photodetectors using the barrier infrared detector architecture. We used photoluminescence measurements for evaluating detector material and studied the influence of the material quality on the intensity of the photoluminescence. We performed direct noise measurements of the superlattice detectors and demonstrated that while intrinsic 1/f noise is absent in superlattice heterodiode, side-wall leakage current can become a source of strong frequency-dependent noise. We developed an effective dry etching process for these complex antimonide-based superlattices that enabled us to fabricate single pixel devices as well as large format focal plane arrays. We describe the demonstration of a 1024x1024 pixel long-wavelength infrared focal plane array based the complementary barrier infrared detector (CBIRD) design. An 11.5 micron cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 ?m cutoff focal plane array are also presented.

Four passive sampling elements (quatrefoil)--II. Film badges for monitoring radon and its progeny.

PubMed

Tommasino, L; Tokonami, S

2011-05-01

The four passive samplers (quatrefoil) already described in a parallel paper, make it possible to obtain thin radiation sources, useful for alpha and beta counting by any passive and real-time detector. In the present paper, the applications of this quatrefoil for measuring radon gas by etch-track detectors will be described. In the case of radon measurements, different solids have been identified, with radon-sorption partition coefficients related to air from 1 to 2000. Uniquely compact radon badges can be obtained by using a layer of these solids facing an alpha track-etch detector. These radon badges make it possible to overcome most of the shortcomings of existing passive monitors. Moreover, these badges show promise for studying the radon solubility of polymer films.

Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naderi, N.; Hashim, M.R., E-mail: roslan@usm.my

2013-06-01

Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. Themore » optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.« less

First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size

NASA Astrophysics Data System (ADS)

Zaťko, B.; Kubanda, D.; Žemlička, J.; Šagátová, A.; Zápražný, Z.; Boháček, P.; Nečas, V.; Mora, Y.; Pichotka, M.; Dudák, J.

2018-02-01

In this work, we have focused on Timepix detectors coupled with the semi-insulating GaAs material sensor. We used undoped bulk GaAs material with the thickness of 350 μm. We prepared and tested four pixelated detectors with 165 μm and 220 μm pixel size with two versions of technology preparation, without and with wet chemically etched trenches around each pixel. We have carried out adjustment of GaAs Timepix detectors to optimize their performance. The energy calibration of one GaAs Timepix detector in Time-over-threshold mode was performed with the use of 241Am and 133Ba radioisotopes. We were able to detect γ-photons with the energy up to 160 keV. The X-ray imaging quality of GaAs Timepix detector was tested with X-ray source using various samples. After flat field we obtained very promising imaging performance of tested GaAs Timepix detectors.

CHARGE SPECTRUM OF HEAVY AND SUPERHEAVY COMPONENTS OF GALACTIC COSMIC RAYS: RESULTS OF THE OLIMPIYA EXPERIMENT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alexeev, Victor; Kalinina, Galina; Pavlova, Tatyana, E-mail: aval37@mail.ru, E-mail: gakalin@mail.ru, E-mail: pavlova4tat@mail.ru

2016-10-01

The aim of the OLIMPIYA experiment is to search for and identify traces of heavy and superheavy nuclei of galactic cosmic rays (GCR) in olivine crystals from stony–iron meteorites serving as nuclear track detectors. The method is based on layer-by-layer grinding and etching of particle tracks in these crystals. Unlike the techniques of other authors, this annealing-free method uses two parameters: the etching rate along the track ( V {sub etch}) and the total track length ( L ), to identify charge Z of a projectile. A series of irradiations with different swift heavy ions at the accelerator facilities ofmore » GSI (Darmstadt) and IMP (Lanzhou) were performed in order to determine and calibrate the dependence of projectile charge on V {sub etch} and L . To date, one of the most essential results of the experiment is the obtained charge spectrum of GCR nuclei within the range of Z > 40, based on about 11.6 thousand processed tracks. As the result of data processing, 384 nuclei with charges Z ≥ 75 have been identified, including 10 nuclei identified as actinides (90 < Z < 103). Three tracks were identified to be produced by nuclei with charges 113 < Z < 129. Such nuclei may be part of the Island of Stability of transfermium elements.« less

Performance of InGaAs short wave infrared avalanche photodetector for low flux imaging

NASA Astrophysics Data System (ADS)

Singh, Anand; Pal, Ravinder

2017-11-01

Opto-electronic performance of the InGaAs/i-InGaAs/InP short wavelength infrared focal plane array suitable for high resolution imaging under low flux conditions and ranging is presented. More than 85% quantum efficiency is achieved in the optimized detector structure. Isotropic nature of the wet etching process poses a challenge in maintaining the required control in the small pitch high density detector array. Etching process is developed to achieve low dark current density of 1 nA/cm2 in the detector array with 25 µm pitch at 298 K. Noise equivalent photon performance less than one is achievable showing single photon detection capability. The reported photodiode with low photon flux is suitable for active cum passive imaging, optical information processing and quantum computing applications.

A TLD-based few-channel spectrometer for mixed photon, electron, and ion fields with high fluence rates.

PubMed

Behrens, R; Ambrosi, P

2002-01-01

A few-channel spectrometer for mixed photon, electron and ion radiation fields has been developed. It consists of a front layer of an etched-track detector foil for detecting protons and ions, a stack of PMMA with thermoluminescent detectors at different depths for gaining spectral information about electrons, and a stack of metallic filters with increasing cut-off photon energies, interspersed with thermoluminescent detectors for gaining spectral information about photons. From the reading of the TL detectors the spectral fluence of the electrons (400 keV to 9 MeV) and photons (20 keV to 2 MeV) can be determined by an unfolding procedure. The spectrometer can be used in pulsed radiation fields with extremely high momentary values of the fluence rate. Design and calibration of the spectrometer are described.

High resolution track etch autoradiography

DOEpatents

Solares, G.; Zamenhof, R.G.

1994-12-27

A detector assembly is disclosed for use in obtaining alpha-track autoradiographs, the detector assembly including a substantially boron-free substrate; a detector layer deposited on the substantially boron-free substrate, the detector layer being capable of recording alpha particle tracks and exhibiting evidence of the alpha tracks in response to being exposed to an etchant, the detector layer being less than about 2 microns thick; and a protective layer deposited on the detector layer, the protective layer being resistant to the etchant and having a thickness of about 0.5 to 1 microns. 13 figures.

High resolution track etch autoradiography

DOEpatents

Solares, Guido; Zamenhof, Robert G.

1994-01-01

A detector assembly for use in obtaining alpha-track autoradiographs, the detector assembly including a substantially boron-free substrate; a detector layer deposited on the substantially boron-free substrate, the detector layer being capable of recording alpha particle tracks and exhibiting evidence of the alpha tracks in response to being exposed to an etchant, the detector layer being less than about 2 microns thick; and a protective layer deposited on the detector layer, the protective layer being resistant to the etchant and having a thickness of about 0.5 to 1 microns.

Image processing analysis of nuclear track parameters for CR-39 detector irradiated by thermal neutron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Jobouri, Hussain A., E-mail: hahmed54@gmail.com; Rajab, Mustafa Y., E-mail: mostafaheete@gmail.com

CR-39 detector which covered with boric acid (H{sub 3}Bo{sub 3}) pellet was irradiated by thermal neutrons from ({sup 241}Am - {sup 9}Be) source with activity 12Ci and neutron flux 10{sup 5} n. cm{sup −2}. s{sup −1}. The irradiation times -T{sub D} for detector were 4h, 8h, 16h and 24h. Chemical etching solution for detector was sodium hydroxide NaOH, 6.25N with 45 min etching time and 60 C° temperature. Images of CR-39 detector after chemical etching were taken from digital camera which connected from optical microscope. MATLAB software version 7.0 was used to image processing. The outputs of image processing of MATLABmore » software were analyzed and found the following relationships: (a) The irradiation time -T{sub D} has behavior linear relationships with following nuclear track parameters: i) total track number - N{sub T} ii) maximum track number - MRD (relative to track diameter - D{sub T}) at response region range 2.5 µm to 4 µm iii) maximum track number - M{sub D} (without depending on track diameter - D{sub T}). (b) The irradiation time -T{sub D} has behavior logarithmic relationship with maximum track number - M{sub A} (without depending on track area - A{sub T}). The image processing technique principally track diameter - D{sub T} can be take into account to classification of α-particle emitters, In addition to the contribution of these technique in preparation of nano- filters and nano-membrane in nanotechnology fields.« less

LWIR HgCdTe Detectors Grown on Ge Substrates

NASA Astrophysics Data System (ADS)

Vilela, M. F.; Lofgreen, D. D.; Smith, E. P. G.; Newton, M. D.; Venzor, G. M.; Peterson, J. M.; Franklin, J. J.; Reddy, M.; Thai, Y.; Patten, E. A.; Johnson, S. M.; Tidrow, M. Z.

2008-09-01

Long-wavelength infrared (LWIR) HgCdTe p-on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p-on- n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10 μm to 11 μm LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency. Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical etch pit densities in mid 106 cm-2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly identical for HgCdTe grown on either Ge or Si substrates.

Response of CR-39 to 0.9-2.5 MeV protons for KOH and NaOH etching solutions

NASA Astrophysics Data System (ADS)

Bahrami, F.; Mianji, F.; Faghihi, R.; Taheri, M.; Ansarinejad, A.

2016-03-01

In some circumstances passive detecting methods are the only or preferable measuring approaches. For instance, defining particles' energy profile inside the objects being irradiated with heavy ions and measuring fluence of neutrons or heavy particles in space missions are the cases covered by these methods. In this paper the ability of polyallyl diglycol carbonate (PADC) track detector (commercially known as CR-39) for passive spectrometry of proton particles is studied. Furthermore, the effect of KOH and NaOH as commonly used chemical etching solutions on the response of the detector is investigated. The experiments were carried out with protons in the energy range of 0.94-2.5 MeV generated by a Van de Graaff accelerator. Then, the exposed track dosimeters were etched in the two aforementioned etchants through similar procedure with the same normality of 6.25 N and the same temperature of 85 °C. Formation of the tracks was precisely investigated and the track diameters were recorded following every etching step for each solution using a multistage etching process. The results showed that the proposed method can be efficiently used for the spectrometry of protons over a wider dynamic range and with a reasonable accuracy. Moreover, NaOH and KOH outperformed each other over different regions of the proton energy range. The detection efficiency of both etchants was approximately 100%.

Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

NASA Astrophysics Data System (ADS)

Miller, Timothy M.; Abrahams, John H.; Allen, Christine A.

2006-04-01

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

NASA Astrophysics Data System (ADS)

Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

2012-06-01

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

On particle track detectors

NASA Technical Reports Server (NTRS)

Benton, E. V.; Gruhn, T. A.; Andrus, C. H.

1973-01-01

Aqueous sodium hydroxide is widely used to develop charged particle tracks in polycarbonate film, particularly Lexan. The chemical nature of the etching process for this system has been determined. A method employing ultra-violet absorbance was developed for monitoring the concentration of the etch products in solution. Using this method it was possible to study the formation of the etching solution saturated in etch products. It was found that the system super-saturates to a significant extent before precipitation occurs. It was also learned that the system approaches its equilibrium state rather slowly. It is felt that both these phenomena may be due to the presence of surfactant in the solution. In light of these findings, suggestions are given regarding the preparation and maintenance of the saturated etch solution. Two additional research projects, involving automated techniques for particle track analysis and particle identification using AgCl crystals, are briefly summarized.

Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

2018-03-01

Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

A parameterization of nuclear track profiles in CR-39 detector

NASA Astrophysics Data System (ADS)

Azooz, A. A.; Al-Nia'emi, S. H.; Al-Jubbori, M. A.

2012-11-01

In this work, the empirical parameterization describing the alpha particles’ track depth in CR-39 detectors is extended to describe longitudinal track profiles against etching time for protons and alpha particles. MATLAB based software is developed for this purpose. The software calculates and plots the depth, diameter, range, residual range, saturation time, and etch rate versus etching time. The software predictions are compared with other experimental data and with results of calculations using the original software, TRACK_TEST, developed for alpha track calculations. The software related to this work is freely downloadable and performs calculations for protons in addition to alpha particles. Program summary Program title: CR39 Catalog identifier: AENA_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AENA_v1_0.html Program obtainable from: CPC Program Library, Queen’s University, Belfast, N. Ireland Licensing provisions: Copyright (c) 2011, Aasim Azooz Redistribution and use in source and binary forms, with or without modification, are permitted provided that the following conditions are met • Redistributions of source code must retain the above copyright, this list of conditions and the following disclaimer. • Redistributions in binary form must reproduce the above copyright notice, this list of conditions and the following disclaimer in the documentation and/or other materials provided with the distribution This software is provided by the copyright holders and contributors “as is” and any express or implied warranties, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose are disclaimed. In no event shall the copyright owner or contributors be liable for any direct, indirect, incidental, special, exemplary, or consequential damages (including, but not limited to, procurement of substitute goods or services; loss of use, data, or profits; or business interruption) however caused and on any theory of liability, whether in contract, strict liability, or tort (including negligence or otherwise) arising in any way out of the use of this software, even if advised of the possibility of such damage. No. of lines in distributed program, including test data, etc.: 15598 No. of bytes in distributed program, including test data, etc.: 3933244 Distribution format: tar.gz Programming language: MATLAB. Computer: Any Desktop or Laptop. Operating system: Windows 1998 or above (with MATLAB R13 or above installed). RAM: 512 Megabytes or higher Classification: 17.5. Nature of problem: A new semispherical parameterization of charged particle tracks in CR-39 SSNTD is carried out in a previous paper. This parameterization is developed here into a MATLAB based software to calculate the track length and track profile for any proton or alpha particle energy or etching time. This software is intended to compete with the TRACK_TEST [1] and TRACK_VISION [2] software currently in use by all people working in the field of SSNTD. Solution method: Based on fitting of experimental results of protons and alpha particles track lengths for various energies and etching times to a new semispherical formula with four free fitting parameters, the best set of energy independent parameters were found. These parameters are introduced into the software and the software is programmed to solve the set of equations to calculate the track depth, track etching rate as a function of both time and residual range for particles of normal and oblique incidence, the track longitudinal profile at both normal and oblique incidence, and the three dimensional track profile at normal incidence. Running time: 1-8 s on Pentium (4) 2 GHz CPU, 3 GB of RAM depending on the etching time value References: [1] ADWT_v1_0 Track_Test Computer program TRACK_TEST for calculating parameters and plotting profiles for etch pits in nuclear track materials. D. Nikezic, K.N. Yu Comput. Phys. Commun. 174(2006)160 [2] AEAF_v1_0 TRACK_VISION Computer program TRACK_VISION for simulating optical appearance of etched tracks in CR-39 nuclear track detectors. D. Nikezic, K.N. Yu Comput. Phys. Commun. 178(2008)591

Wavelength-Tunable IR Detector based on Suspended Bilayer Graphene Micro Ribbons

DTIC Science & Technology

2013-11-05

Substrates: Reduced Etching via Suppressed Catalytic Hydrogenation Using C2H4,” Chemistry of Materials , DOI : 10.1021/cm402052z (2013) 3. K. Kumar...studied the lesser known photophysics in CVD material . To this end we designed, fabricated, and characterized in Year One a device with suspended...optimization, we have discovered a new growth mode of two-lobed symmetrical curvilinear graphene domains. After optimization the CVD material quality was

On the influence of etch pits in the overall dissolution rate of apatite basal sections

NASA Astrophysics Data System (ADS)

Alencar, Igor; Guedes, Sandro; Palissari, Rosane; Hadler, Julio C.

2015-09-01

Determination of efficiencies for particle detection plays a central role for proper estimation of reaction rates. If chemical etching is employed in the revelation of latent particle tracks in solid-state detectors, dissolution rates and etchable lengths are important factors governing the revelation and observation. In this work, the mask method, where a reference part of the sample is protected during dissolution, was employed to measure step heights in basal sections of apatite etched with a nitric acid, HNO, solution at a concentration of 1.1 M and a temperature of 20 °C. We show a drastic increase in the etching velocity as the number of etch pits in the surface augments, in accordance with the dissolution stepwave model, where the outcrop of each etch pit generates a continuous sequence of stepwaves. The number of etch pits was varied by irradiation with neutrons and perpendicularly incident heavy ions. The size dependence of the etch-pit opening with etching duration for ion (200-300 MeV 152Sm and 238U) tracks was also investigated. There is no distinction for the etch pits between the different ions, and the dissolution seems to be governed by the opening velocity when a high number of etch pits are present in the surface. Measurements of the etchable lengths of these ion tracks show an increase in these lengths when samples are not pre-annealed before irradiation. We discuss the implications of these findings for fission-track modelling.

Fabrication of Pop-up Detector Arrays on Si Wafers

NASA Technical Reports Server (NTRS)

Li, Mary J.; Allen, Christine A.; Gordon, Scott A.; Kuhn, Jonathan L.; Mott, David B.; Stahle, Caroline K.; Wang, Liqin L.

1999-01-01

High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way, preparing us for the next step of the experiment, the thermal test.

Reduced Noise UV Enhancement of Etch Rates for Nuclear Tracks in CR-39

NASA Astrophysics Data System (ADS)

Sheets, Rebecca; Clarkson, David; Ume, Rubab; Regan, Sean; Sangster, Craig; Padalino, Stephen; McLean, James

2016-10-01

The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C for 6 hours, producing micron-scale signal pits at the nuclear track sites. Using CR-39 irradiated with 5.4 MeV alpha particles and 1.0 MeV protons, we show that exposing the CR-39 to high intensity UV light before etching, with wavelengths between 240 nm and 350 nm, speeds the etch process. Elevated temperatures during UV exposure amplifies this effect, with etch rates up to 50% greater than unprocessed conditions. CR-39 pieces exposed to UV light and heat can also exhibit heightened levels of etch-induced noise (surface features not caused by nuclear particles). By illuminating the CR-39 from the side opposite to the tracks, a similar level of etch enhancement was obtained with little to no noise. The effective wavelength range is reduced, due to strong attenuation of shorter wavelengths. Funded in part by a LLE contract through the DOE.

3D imaging of neutron tracks using confocal microscopy

NASA Astrophysics Data System (ADS)

Gillmore, Gavin; Wertheim, David; Flowers, Alan

2016-04-01

Neutron detection and neutron flux assessment are important aspects in monitoring nuclear energy production. Neutron flux measurements can also provide information on potential biological damage from exposure. In addition to the applications for neutron measurement in nuclear energy, neutron detection has been proposed as a method of enhancing neutrino detectors and cosmic ray flux has also been assessed using ground-level neutron detectors. Solid State Nuclear Track Detectors (or SSNTDs) have been used extensively to examine cosmic rays, long-lived radioactive elements, radon concentrations in buildings and the age of geological samples. Passive SSNTDs consisting of a CR-39 plastic are commonly used to measure radon because they respond to incident charged particles such as alpha particles from radon gas in air. They have a large dynamic range and a linear flux response. We have previously applied confocal microscopy to obtain 3D images of alpha particle tracks in SSNTDs from radon track monitoring (1). As a charged particle traverses through the polymer it creates an ionisation trail along its path. The trail or track is normally enhanced by chemical etching to better expose radiation damage, as the damaged area is more sensitive to the etchant than the bulk material. Particle tracks in CR-39 are usually assessed using 2D optical microscopy. In this study 6 detectors were examined using an Olympus OLS4100 LEXT 3D laser scanning confocal microscope (Olympus Corporation, Japan). The detectors had been etched for 2 hours 50 minutes at 85 °C in 6.25M NaOH. Post etch the plastics had been treated with a 10 minute immersion in a 2% acetic acid stop bath, followed by rinsing in deionised water. The detectors examined had been irradiated with a 2mSv neutron dose from an Am(Be) neutron source (producing roughly 20 tracks per mm2). We were able to successfully acquire 3D images of neutron tracks in the detectors studied. The range of track diameter observed was between 4 and 10 microns. Thus this study suggests that, using confocal microscopy, 3D imaging of neutron tracks in SSNTDs is feasible. (1) Wertheim D, Gillmore G, Brown L, Petford N. A new method of imaging particle tracks in solid state nuclear track detectors. J Microsc. 2010; 237: 1-6.

Quartz substrate infrared photonic crystal

NASA Astrophysics Data System (ADS)

Ghadiri, Khosrow; Rejeb, Jalel; Vitchev, Vladimir N.

2003-01-01

This paper presents the fabrication of a planar photonic crystal (p2c) made of a square array of dielectric rods embedded in air, operating in the infrared spectrum. A quartz substrate is employed instead of the commonly used silicon or column III-V substrate. Our square structure has a normalized cylinder radius-to-pitch ratio of r/a = 0.248 and dielectric material contrast ɛr of 4.5. We choose a Z-cut synthetic quartz for its cut (geometry), and etching properties. Then a particular Z-axis etching process is employed in order to ensure the sharp-edged verticality of the rods and fast etching speed. We also present the computer simulations that allowed the establishment of the photonic band gaps (PBG) of our photonic crystal, as well as the actual measurements. An experimental measurement have been carried out and compared with different simulations. It was found that experimental results are in good agreement with different simulation results. Finally, a frequency selective device for optical communication based on the introduction of impurity sites in the photonic crystal is presented. With our proposed structure Optical System on a Chip (OsoC) with micro-cavity based active devices such as lasers, diodes, modulators, couplers, frequency selective emitters, add-drop filters, detectors, mux/demuxes and polarizers connected by passive waveguide links can be realized.

Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors: Effect of chlorination on the TlBr band edges for radiation detectors

DOE PAGES

Varley, J. B.; Conway, A. M.; Voss, L. F.; ...

2015-02-09

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

Spectrometry of linear energy transfer and dosimetry measurements onboard spacecrafts and aircrafts

NASA Astrophysics Data System (ADS)

Spurný, F.; Ploc, O.; Jadrníčková, I.

2009-01-01

There are only a few methods of dosimetry which can estimate the contribution of different particles to onboard spacecraft and/or aircraft exposure. This contribution describes an attempt to estimate the contribution of different components to the exposure level using MDU-Liulin energy deposition spectrometer and thermoluminescent detectors (TLD’s), in combination with a spectrometer of linear energy transfer (LET) based on track etch detectors. This equipment was exposed onboard: the International Space Station for a long period and two shorter shuttle missions and a commercial subsonic aircraft for several long-term monitoring periods from 2001 to 2006. The data obtained are analyzed from several points of view and the obtained results are presented, analyzed, and discussed.

Novel Heterongineered Detectors for Multi-Color Infrared Sensing

DTIC Science & Technology

2012-01-30

barriers”. Appl. Phys. Lett. 98, 121106 (2011) 9. A. Khoshakhlagh, F. Jaeckel C. Hains J. B. Rodriguez , L. R. Dawson, K. Malloy, and S. Krishna...AlAs etch-stop layer. The detailed processing sequence is included in the Methods. b da c n + -GaAs 200 nm Mesa lndium bump 2.1 –2.1 FPA p d SP-FPA...FPA chip. The processing scheme of the plasmonic FPA chip consists of a dry etch to form the mesa , surface passivation, ohmic metal evaporation, under

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

NASA Astrophysics Data System (ADS)

Pallon, J.; Syväjärvi, M.; Wang, Q.; Yakimova, R.; Iakimov, T.; Elfman, M.; Kristiansson, P.; Nilsson, E. J. C.; Ros, L.

2016-03-01

Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

The processing of enriched germanium for the Majorana   Demonstrator  and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

The processing of enriched germanium for the MAJORANA DEMONSTRATOR and R&D for a next generation double-beta decay experiment

NASA Astrophysics Data System (ADS)

Abgrall, N.; Arnquist, I. J.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caja, J.; Caja, M.; Caldwell, T. S.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Dunstan, D. T.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R. S.; Henning, R.; Hoppe, E. W.; Jasinski, B. R.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Meyer, J. H.; Myslik, J.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Reising, J. A.; Rielage, K.; Robertson, R. G. H.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Toth, L. M.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

2018-01-01

The MAJORANA DEMONSTRATOR is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76 Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76 Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluids from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

Advances in crystal growth, device fabrication and characterization of thallium bromide detectors for room temperature applications

NASA Astrophysics Data System (ADS)

Datta, Amlan; Moed, Demi; Becla, Piotr; Overholt, Matthew; Motakef, Shariar

2016-10-01

Thallium bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. However, several critical issues need to be addressed before deployment of this material for long-term field applications can be realized. In this paper, progress made towards solving some of these challenges is discussed. The most significant factors for achieving long-term performance stability for TlBr devices include residual stress as generated during crystal growth and fabrication processes, surface conditions, and the choice of contact metal. Modifications to the commonly used traveling molten zone growth technique for TlBr crystals can significantly minimize the stresses generated by large temperature gradients near the melt-solid interface of the growing crystal. Plasma processing techniques were introduced for the first time to modify the Br-etched TlBr surfaces, which resulted in improvements to the surface conditions, and consequently the spectroscopic response of the detectors. Palladium electrodes resulted a 20-fold improvement in the room-temperature device lifetime when compared to its Br-etched Pt counterpart.

Overcoming Etch Challenges on a 6″ Hg1- x Cd x Te MBE on Si Wafer

NASA Astrophysics Data System (ADS)

Apte, Palash; Norton, Elyse; Robinson, Solomon

2017-10-01

The effect of increasing photoresist (PR) thickness on the inductively coupled plasma (ICP) dry etched characteristics of a 6″ (c.15 cm) molecular beam epitaxy Hg1- x Cd x Te/Si wafer is investigated. It is determined that the Hg1- x Cd x Te etch rate (ER) does not vary significantly with a change in the PR thickness. Also, the vertical ER of the PR is seen to be independent of the PR thickness, but the lateral ER is seen to reduce significantly with increased PR thickness. Indeed, very little reduction in the pixel mesa area post-dry etch is seen for the thicker PR. Consequently, the trench sidewall angle is also seen to vary as a function of the PR thickness. Since ICP is the more attractive choice for dry etching Hg1- x Cd x Te, this simple, cost-effective way to extend the capabilities of dry etching (larger mesa top area post-dry etch, ability to create tailor-made trench sidewall angles for optimal conformal passivation deposition, and potential for reduced dry etch damage) described here would allow for the fabrication of next generation infrared detectors with increased yield and reduced cost. Although similar results have been presented using the electron cyclotron resonance system to dry etch Hg1- x Cd x Te, to the best of our knowledge, this is the first time that such results have been presented using an ICP system.

Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirota, Kosa, E-mail: hirota-kousa@sme.hitachi-hitec.com; Itabashi, Naoshi; Tanaka, Junichi

2014-11-01

The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaningmore » method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.« less

Optical fiber sensor for low dose gamma irradiation monitoring

NASA Astrophysics Data System (ADS)

de Andrés, Ana I.; Esteban, Ã.`scar; Embid, Miguel

2016-05-01

An optical fiber gamma ray detector is presented in this work. It is based on a Terbium doped Gadolinium Oxysulfide (Gd2O2S:Tb) scintillating powder which cover a chemically etched polymer fiber tip. This etching improves the fluorescence gathering by the optical fiber. The final diameter has been selected to fulfill the trade-off between light gathering and mechanical strength. Powder has been encapsulated inside a microtube where the fiber tip is immersed. The sensor has been irradiated with different air Kerma doses up to 2 Gy/h with a 137Cs source, and the spectral distribution of the fluorescence intensity has been recorded in a commercial grade CCD spectrometer. The obtained signal-to-noise ratio is good enough even for low doses, which has allowed to reduce the integration time in the spectrometer. The presented results show the feasibility for using low cost equipment to detect/measure ionizing radiation as gamma rays are.

Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Costen, Nick; Allen, Christine

2007-01-01

This conference poster reviews the Indium hybridization of the large format TES bolometer arrays. We are developing a key technology to enable the next generation of detectors. That is the Hybridization of Large Format Arrays using Indium bonded detector arrays containing 32x40 elements which conforms to the NIST multiplexer readout architecture of 1135 micron pitch. We have fabricated and hybridized mechanical models with the detector chips bonded after being fully back-etched. The mechanical support consists of 30 micron walls between elements Demonstrated electrical continuity for each element. The goal is to hybridize fully functional array of TES detectors to NIST readout.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Conway, A. M.; Voss, L. F.

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

The analysis method of the DRAM cell pattern hotspot

NASA Astrophysics Data System (ADS)

Lee, Kyusun; Lee, Kweonjae; Chang, Jinman; Kim, Taeheon; Han, Daehan; Hong, Aeran; Kim, Yonghyeon; Kang, Jinyoung; Choi, Bumjin; Lee, Joosung; Lee, Jooyoung; Hong, Hyeongsun; Lee, Kyupil; Jin, Gyoyoung

2015-03-01

It is increasingly difficult to determine degree of completion of the patterning and the distribution at the DRAM Cell Patterns. When we research DRAM Device Cell Pattern, there are three big problems currently, it is as follows. First, due to etch loading, it is difficult to predict the potential defect. Second, due to under layer topology, it is impossible to demonstrate the influence of the hotspot. Finally, it is extremely difficult to predict final ACI pattern by the photo simulation, because current patterning process is double patterning technology which means photo pattern is completely different from final etch pattern. Therefore, if the hotspot occurs in wafer, it is very difficult to find it. CD-SEM is the most common pattern measurement tool in semiconductor fabrication site. CD-SEM is used to accurately measure small region of wafer pattern primarily. Therefore, there is no possibility of finding places where unpredictable defect occurs. Even though, "Current Defect detector" can measure a wide area, every chip has same pattern issue, the detector cannot detect critical hotspots. Because defect detecting algorithm of bright field machine is based on image processing, if same problems occur on compared and comparing chip, the machine cannot identify it. Moreover this instrument is not distinguished the difference of distribution about 1nm~3nm. So, "Defect detector" is difficult to handle the data for potential weak point far lower than target CD. In order to solve those problems, another method is needed. In this paper, we introduce the analysis method of the DRAM Cell Pattern Hotspot.

ECCO: Th/U/Pu/Cm Dating of Galactic Cosmic Ray Nuclei

NASA Technical Reports Server (NTRS)

Westphal, A. J.; Weaver, B. A.; Solarz, M.; Dominquez, G.; Craig, N.; Adams, J. H.; Barbier, L. M.; Christian, E. R.; Mitchell, J. W.; Binns, W. R.;

Surface Treatment And Protection Method For Cadium Zinc Telluride Crystals

DOEpatents

Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

2006-02-21

A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.

Research on anisotropy of fusion-produced protons and neutrons emission from high-current plasma-focus discharges.

PubMed

Malinowski, K; Skladnik-Sadowska, E; Sadowski, M J; Szydlowski, A; Czaus, K; Kwiatkowski, R; Zaloga, D; Paduch, M; Zielinska, E

2015-01-01

The paper concerns fast protons and neutrons from D-D fusion reactions in a Plasma-Focus-1000U facility. Measurements were performed with nuclear-track detectors arranged in "sandwiches" of an Al-foil and two PM-355 detectors separated by a polyethylene-plate. The Al-foil eliminated all primary deuterons, but was penetrable for fast fusion protons. The foil and first PM-355 detector were penetrable for fast neutrons, which were converted into recoil-protons in the polyethylene and recorded in the second PM-355 detector. The "sandwiches" were irradiated by discharges of comparable neutron-yields. Analyses of etched tracks and computer simulations of the fusion-products behavior in the detectors were performed.

Research on anisotropy of fusion-produced protons and neutrons emission from high-current plasma-focus discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinowski, K., E-mail: karol.malinowski@ncbj.gov.pl; Sadowski, M. J.; Szydlowski, A.

2015-01-15

The paper concerns fast protons and neutrons from D-D fusion reactions in a Plasma-Focus-1000U facility. Measurements were performed with nuclear-track detectors arranged in “sandwiches” of an Al-foil and two PM-355 detectors separated by a polyethylene-plate. The Al-foil eliminated all primary deuterons, but was penetrable for fast fusion protons. The foil and first PM-355 detector were penetrable for fast neutrons, which were converted into recoil-protons in the polyethylene and recorded in the second PM-355 detector. The “sandwiches” were irradiated by discharges of comparable neutron-yields. Analyses of etched tracks and computer simulations of the fusion-products behavior in the detectors were performed.

Three-dimensional collimation of in-plane-propagating light using silicon micromachined mirror

NASA Astrophysics Data System (ADS)

Sabry, Yasser M.; Khalil, Diaa; Saadany, Bassam; Bourouina, Tarik

2014-03-01

We demonstrate light collimation of single-mode optical fibers using deeply-etched three-dimensional curved micromirror on silicon chip. The three-dimensional curvature of the mirror is controlled by a process combining deep reactive ion etching and isotropic etching of silicon. The produced surface is astigmatic with out-of-plane radius of curvature that is about one half the in-plane radius of curvature. Having a 300-μm in-plane radius and incident beam inplane inclined with an angle of 45 degrees with respect to the principal axis, the reflected beam is maintained stigmatic with about 4.25 times reduction in the beam expansion angle in free space and about 12-dB reduction in propagation losses, when received by a limited-aperture detector.

Spectral characterization of laser-accelerated protons with CR-39 nuclear track detector.

PubMed

Seimetz, M; Bellido, P; García, P; Mur, P; Iborra, A; Soriano, A; Hülber, T; García López, J; Jiménez-Ramos, M C; Lera, R; Ruiz-de la Cruz, A; Sánchez, I; Zaffino, R; Roso, L; Benlloch, J M

2018-02-01

CR-39 nuclear track material is frequently used for the detection of protons accelerated in laser-plasma interactions. The measurement of track densities allows for determination of particle angular distributions, and information on the kinetic energy can be obtained by the use of passive absorbers. We present a precise method of measuring spectral distributions of laser-accelerated protons in a single etching and analysis process. We make use of a one-to-one relation between proton energy and track size and present a precise calibration based on monoenergetic particle beams. While this relation is limited to proton energies below 1 MeV, we show that the range of spectral measurements can be significantly extended by simultaneous use of absorbers of suitable thicknesses. Examples from laser-plasma interactions are presented, and quantitative results on proton energies and particle numbers are compared to those obtained from a time-of-flight detector. The spectrum end points of continuous energy distributions have been determined with both detector types and coincide within 50-100 keV.

On charged particle tracks in cellulose nitrate and Lexan

NASA Technical Reports Server (NTRS)

Benton, E. V.; Henke, R. P.

1972-01-01

Investigations were performed aimed at developing plastic nuclear track detectors into quantitative tools for recording and measuring multicharged, heavy particles. Accurate track etch rate measurements as a function of LET were performed for cellulose nitrate and Lexan plastic detectors. This was done using a variety of incident charged particle types and energies. The effect of aging of latent tracks in Lexan in different gaseous atmospheres was investigated. Range distributions of high energy N-14 particle bevatron beams in nuclear emulsion were measured. Investigation of charge resolution and Bragg peak measurements were carried out using plastic nuclear track detectors.

A study of GaN-based LED structure etching using inductively coupled plasma

NASA Astrophysics Data System (ADS)

Wang, Pei; Cao, Bin; Gan, Zhiyin; Liu, Sheng

2011-02-01

GaN as a wide band gap semiconductor has been employed to fabricate optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs). Recently several different dry etching techniques for GaN-based materials have been developed. ICP etching is attractive because of its superior plasma uniformity and strong controllability. Most previous reports emphasized on the ICP etching characteristics of single GaN film. In this study dry etching of GaN-based LED structure was performed by inductively coupled plasmas (ICP) etching with Cl2 as the base gas and BCl3 as the additive gas. The effects of the key process parameters such as etching gases flow rate, ICP power, RF power and chamber pressure on the etching properties of GaN-based LED structure including etching rate, selectivity, etched surface morphology and sidewall was investigated. Etch depths were measured using a depth profilometer and used to calculate the etch rates. The etch profiles were observed with a scanning electron microscope (SEM).

[The durability of three self-etch adhesives bonded to dentin].

PubMed

Tian, Fu-Cong; Wang, Xiao-Yan; Gao, Xue-Jun

2013-04-01

To investigate the durability of self-etch adhesives bonded to dentin in vitro. Forty-two extracted human molars were selected and occlusal dentin surfaces were exposed. The teeth were randomly distributed into three groups based on adhesives applied. The one-step self-etch adhesive B(Adper Prompt) and C(G-Bond) and two-step self-etch adhesive A (Clearfil SE bond) were used. After application of the adhesives to the dentin surfaces, composite crowns were built up, after 24 h water storage, the teeth were sectioned longitudinally into sticks (1.0 mm×1.0 mm bonding area) for microtensile testing or slabs (1 mm thick) for scanning electron microscopec (SEM) observation. Bonding strength (mTBS) and nano-leakage were evaluated immediately after cutting or after 6 months in water. The mTBS was analyzed using one-way ANOVA (SPSS 13.0). The nanoleakage was observed by SEM with a backscattered electron detector. Both adhesives and water storage time affected the mTBS. All adhesives showed decreased bond strength after six-month water aging [A dropped from (40.60 ± 5.76) MPa to (36.04 ± 3.15) MPa; B dropped from (19.06 ± 1.50) MPa to (11.19 ± 1.97) MPa; C dropped from (17.75 ± 1.10) MPa to (9.14 ± 1.15) MPa] (P < 0.05). B and C showed lower mTBS than A after aging (P < 0.05). Compared to A, nanoleakage was more obvious after aging for B and C. All self-etch adhesives tested were probably influenced by water aging, however, the two-step adhesive showed better durability than the one-step adhesives.

Method for producing thin sheets of proton-sensitive CR-39 plastic track detectors

NASA Technical Reports Server (NTRS)

Kinoshita, K.

1980-01-01

Procedures for fabricating large sheets of CR-39 with uniform chemical reactivity and sensitivity and which retain a clear, smooth surface after prolonged etching were investigated. Very thin sheets for certain Spacelab applications were fabricated.

Unipolar Barrier Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Soibel, Alexander (Inventor); Khoshakhlagh, Arezou (Inventor); Gunapala, Sarath (Inventor)

2017-01-01

Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.

NEW LENSLET BASED IFS WITH HIGH DETECTOR PIXEL EFFICIENCY

NASA Astrophysics Data System (ADS)

Gong, Qian

2018-01-01

Three IFS types currently used for optical design are: lenslet array, imager slicer, and lenslet array and fiber combined. Lenslet array based Integral Field Spectroscopy (IFS) is very popular for many astrophysics applications due to its compactness, simplicity, as well as cost and mass savings. The disadvantage of lenslet based IFS is its low detector pixel efficiency. Enough spacing is needed between adjacent spectral traces in cross dispersion direction to avoid wavelength cross-talk, because the same wavelength is not aligned to the same column on detector. Such as on a recent exoplanet coronagraph instrument study to support the coming astrophysics decadal survey (LUVOIR), to cover a 45 λ/D Field of View (FOV) with a spectral resolving power of 200 at shortest wavelength, a 4k x 4k detector array is needed. This large format EMCCD pushes the detector into technology development area with a low TRL. Besides the future mission, it will help WFIRST coronagraph IFS by packing all spectra into a smaller area on detector, which will reduce the chance for electrons to be trapped in pixels, and slow the detector degradation during the mission.The innovation we propose here is to increase the detector packing efficiency by grouping a number of lenslets together to form many mini slits. In other words, a number of spots (Point Spread Function at lenslet focus) are aligned into a line to resemble a mini slit. Therefore, wavelength cross-talk is no longer a concern anymore. This combines the advantage of lenslet array and imager slicer together. The isolation rows between spectral traces in cross dispersion direction can be reduced or removed. So the packing efficiency is greatly increased. Furthermore, the today’s microlithography and etching technique is capable of making such a lenslet array, which will relax the detector demand significantly. It will finally contribute to the habitable exoplanets study to analyzing their spectra from direct images. Detailed theory, design, analysis, and fabrication status will be presented.

Automated scanning of plastic nuclear track detectors using the Minnesota star scanner

NASA Technical Reports Server (NTRS)

Fink, P. J.; Waddington, C. J.

1986-01-01

The problems found in an attempt to adapt an automated scanner of astronomical plates, the Minnesota Automated Dual Plate Scanner (APS), to locating and measuring the etch pits produced by ionizing particles in plastic nuclear track detectors (CR-39) are described. A visual study of these pits was made to determine the errors introduced in determining positions and shapes. Measurements made under a low power microscope were compared with those from the APS.

Heterojunction-Internal-Photoemission Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1991-01-01

New type of photodetector adds options for design of imaging devices. Heterojunction-internal-photoemission (HIP) infrared photodetectors proposed for incorporation into planar arrays in imaging devices required to function well at wavelengths from 8 to 17 micrometers and at temperatures above 65 K. Photoexcited electrons cross energy barrier at heterojunction and swept toward collection layer. Array of such detectors made by etching mesa structures. HIP layers stacked to increase quantum efficiency. Also built into integrated circuits including silicon multiplexer/readout circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yu; School of Mechanical and Electrical Engineering, Wuhan Institute of Technology, Wuhan 430073; Guo, Zhiguang, E-mail: zguo@licp.cas.cn

Graphical abstract: A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces, showing a good superhydrophobicity with the contact angle of about 170°, and the sliding angle of about 0°. Meanwhile, the potential formation mechanism about it is also presented. Highlights: ► A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces. ► The obtained surfaces show good superhydrophobicity with a high contact angle and low sliding angle. ► The color of the etched substrate dark brown or black and it is so-called black silicon. -- Abstract: Silicon substrates treated by metal-assisted chemical etching have been studied formore » many years since they could be employed in a variety of electronic and optical devices such as integrated circuits, photovoltaics, sensors and detectors. However, to the best of our knowledge, the chemical etching treatment on the same silicon substrate with the assistance of two or more kinds of metals has not been reported. In this paper, we mainly focus on the etching time and finally obtain a series of superhydrophobic silicon surfaces with novel etching structures through two successive etching processes of Cu-assisted and Ag-assisted chemical etching. It is shown that large-scale homogeneous but locally irregular wire-like structures are obtained, and the superhydrophobic surfaces with low hysteresis are prepared after the modifications with low surface energy materials. It is worth noting that the final silicon substrates not only possess high static contact angle and low hysteresis angle, but also show a black color, indicating that the superhydrophobic silicon substrate has an extremely low reflectance in a certain range of wavelengths. In our future work, we will go a step further to discuss the effect of temperature, the size of Cu nanoparticles and solution concentration on the final topography and superhydrophobicity.« less

Hot Stuff.

ERIC Educational Resources Information Center

Patterson, Kristin

1996-01-01

Property theft at schools is a problem districts are having to confront. Deterrents include inventory checks and etching equipment with inventory control numbers. In Washington, D.C., officials are installing high-security equipment such as closed-circuit television, fiber-optics lines to secure computers, and motion detectors. (MLF)

Rigid thin windows for vacuum applications

DOEpatents

Meyer, Glenn Allyn; Ciarlo, Dino R.; Myers, Booth Richard; Chen, Hao-Lin; Wakalopulos, George

1999-01-01

A thin window that stands off atmospheric pressure is fabricated using photolithographic and wet chemical etching techniques and comprises at least two layers: an etch stop layer and a protective barrier layer. The window structure also comprises a series of support ribs running the width of the window. The windows are typically made of boron-doped silicon and silicon nitride and are useful in instruments such as electron beam guns and x-ray detectors. In an electron beam gun, the window does not impede the electrons and has demonstrated outstanding gun performance and survivability during the gun tube manufacturing process.

Surface treatment and protection method for cadmium zinc telluride crystals

DOEpatents

Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

2003-01-01

A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water.

Xe- and U-tracks in apatite and muscovite near the etching threshold

NASA Astrophysics Data System (ADS)

Wauschkuhn, Bastian; Jonckheere, Raymond; Ratschbacher, Lothar

2015-01-01

Ion irradiation of a wedge-shaped Durango apatite backed by a mica detector allows investigating ion track ranges and etching properties at different points along the tracks. Transmission profiles obtained by irradiation with 2 × 106 cm-2 11.1 MeV/amu 132Xe and 2 × 106 cm-2 11.1 MeV/amu 238U parallel to the apatite c-axis correspond to ranges calculated with SRIM (Xe: 76.3 μm; U: 81.1 μm). However, the measured profiles show much greater etchable track-length variations than the calculated longitudinal straggles. The probable cause is that the length deficit exhibits significant variation from track to track. The measured length deficit in muscovite is in agreement with most existing data. In contrast, the length deficit in apatite appears to be close to zero, which is in conflict with all earlier estimates. This probably results from the etching properties of the apatite basal face, which permit surface-assisted sub-threshold etching of track sections in the nuclear stopping regime. These sections are not accessible from the opposite direction, i.e. by etching towards the endpoint of the tracks or in the direction of the ion beam. This conclusion is supported by the fact that linear dislocations are revealed in apatite basal faces and by the observation of imperfect etch pits that are separated from the etched ion track channel by a section that appears unetched under the microscope.

Fabrication of an Absorber-Coupled MKID Detector

NASA Technical Reports Server (NTRS)

Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

2012-01-01

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

A novel transparent charged particle detector for the CPET upgrade at TITAN

NASA Astrophysics Data System (ADS)

Lascar, D.; Kootte, B.; Barquest, B. R.; Chowdhury, U.; Gallant, A. T.; Good, M.; Klawitter, R.; Leistenschneider, E.; Andreoiu, C.; Dilling, J.; Even, J.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.

2017-10-01

The detection of an electron bunch exiting a strong magnetic field can prove challenging due to the small mass of the electron. If placed too far from a solenoid's entrance, a detector outside the magnetic field will be too small to reliably intersect with the exiting electron beam because the light electrons will follow the diverging magnetic field outside the solenoid. The TITAN group at TRIUMF in Vancouver, Canada, has made use of advances in the practice and precision of photochemical machining (PCM) to create a new kind of charge collecting detector called the "mesh detector." The TITAN mesh detector was used to solve the problem of trapped electron detection in the new Cooler PEnning Trap (CPET) currently under development at TITAN. This thin array of wires etched out of a copper plate is a novel, low profile, charge agnostic detector that can be made effectively transparent or opaque at the user's discretion.

Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2

NASA Astrophysics Data System (ADS)

Gavrilov, G. E.; Vakhtel, V. M.; Maysuzenko, D. A.; Tavtorkina, T. A.; Fetisov, A. A.; Shvetsova, N. Yu.

2017-12-01

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%CF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.

Study of the spatial resolution of low-material GEM tracking detectors

NASA Astrophysics Data System (ADS)

Kudryavtsev, V. N.; Maltsev, T. V.; Shekhtman, L. I.

2018-02-01

The spatial resolution of GEM based tracking detectors has been simulated and measured. The simulation includes the GEANT4 based transport of high energy electrons with careful accounting for atomic relaxation processes including emission of fluorescent photons and Auger electrons and custom post-processing, including accounting for diffusion, gas amplification fluctuations, the distribution of signals on readout electrodes, electronics noise and a particular algorithm of the final coordinate calculation (center of gravity). The simulation demonstrates that a minimum of the spatial resolution of about 10 μm can be achieved with strip pitches from 250 μm to 300 μm. For larger pitches the resolution is quickly degrading reaching 80-100 μm at a pitch of 500 μm. The spatial resolution of low-material triple-GEM detectors for the DEUTRON facility at the VEPP-3 storage ring is measured at the extracted beam facility of the VEPP-4M collider. The amount of material in these detectors is reduced by etching the copper of the GEMs electrodes and using a readout structure on a thin kapton foil rather than on a glass fibre plate. The exact amount of material in one DEUTRON detector is measured by studying multiple scattering of 100 MeV electrons in it. The result of these measurements is X/X0 = 2.4×10-3 corresponding to a thickness of the copper layers of the GEM foils of 3 μm. The spatial resolution of one DEUTRON detector is measured with 500 MeV electrons and the measured value is equal to 35 ± 1 μm for orthogonal tracks.

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beck, Patrick R.

2010-01-07

Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current ormore » leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.« less

Computer program TRACK_TEST for calculating parameters and plotting profiles for etch pits in nuclear track materials

NASA Astrophysics Data System (ADS)

Nikezic, D.; Yu, K. N.

2006-01-01

A computer program called TRACK_TEST for calculating parameters (lengths of the major and minor axes) and plotting profiles in nuclear track materials resulted from light-ion irradiation and subsequent chemical etching is described. The programming steps are outlined, including calculations of alpha-particle ranges, determination of the distance along the particle trajectory penetrated by the chemical etchant, calculations of track coordinates, determination of the lengths of the major and minor axes and determination of the contour of the track opening. Descriptions of the program are given, including the built-in V functions for the two commonly employed nuclear track materials commercially known as LR 115 (cellulose nitrate) and CR-39 (poly allyl diglycol carbonate) irradiated by alpha particles. Program summaryTitle of the program:TRACK_TEST Catalogue identifier:ADWT Program obtainable from:CPC Program Library, Queen's University of Belfast, N. Ireland Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADWT Computer:Pentium PC Operating systems:Windows 95+ Programming language:Fortran 90 Memory required to execute with typical data:256 MB No. of lines in distributed program, including test data, etc.: 2739 No. of bytes in distributed program, including test data, etc.:204 526 Distribution format:tar.gz External subprograms used:The entire code must be linked with the MSFLIB library Nature of problem: Fast heavy charged particles (like alpha particles and other light ions etc.) create latent tracks in some dielectric materials. After chemical etching in aqueous NaOH or KOH solutions, these tracks become visible under an optical microscope. The growth of a track is based on the simultaneous actions of the etchant on undamaged regions (with the bulk etch rate V) and along the particle track (with the track etch rate V). Growth of the track is described satisfactorily by these two parameters ( V and V). Several models have been presented in the past describing the track development, one of which is the model of Nikezic and Yu (2003) [D. Nikezic, K.N. Yu, Three-dimensional analytical determination of the track parameters. Over-etched tracks, Radiat. Meas. 37 (2003) 39-45] used in the present program. The present computer program has been written to calculate coordinates of points on the track wall and to determine other relevant track parameters. Solution method:Coordinates of points on the track wall assuming normal incidence were calculated by using the method as described by Fromm et al. (1988) [M. Fromm, A. Chambaudet, F. Membrey, Data bank for alpha particle tracks in CR39 with energies ranging from 0.5 to 5 MeV recording for various incident angles, Nucl. Tracks Radiat. Meas. 15 (1988) 115-118]. The track is then rotated through the incident angle in order to obtain the coordinates of the oblique track [D. Nikezic, K.N. Yu, Three-dimensional analytical determination of the track parameters. Over-etched tracks, Radiat. Meas. 37 (2003) 39-45; D. Nikezic, Three dimensional analytical determination of the track parameters, Radiat. Meas. 32 (2000) 277-282]. In this way, the track profile in two dimensions (2D) was obtained. In the next step, points in the track wall profile are rotated around the particle trajectory. In this way, circles that outline the track in three dimensions (3D) are obtained. The intersection between the post-etching surface of the detector and the 3D track is the track opening (or the track contour). Coordinates of the track 2D and 3D profiles and the track opening are saved in separate output data files. Restrictions: The program cannot calculate track parameters for the incident angle of exactly 90°. The alpha-particle energy should be smaller than 10 MeV. Furthermore, the program cannot perform calculations for tracks in some extreme cases, such as for very low incident energies or very small incident angles. Additional comments: This is a freeware, but publications arising from using this program should cite the present paper and the paper describing the track growth model [D. Nikezic, K.N. Yu, Three-dimensional analytical determination of the track parameters. Over-etched tracks, Radiat. Meas. 37 (2003) 39-45]. Moreover, the references for the V functions used should also be cited. For the CR-39 detector: Function (1): S.A. Durrani, R.K. Bull, Solid State Nuclear Track Detection. Principles, Methods and Applications, Pergamon Press, 1987. Function (2): C. Brun, M. Fromm, M. Jouffroy, P. Meyer, J.E. Groetz, F. Abel, A. Chambaudet, B. Dorschel, D. Hermsdorf, R. Bretschneider, K. Kadner, H. Kuhne, Intercomparative study of the detection characteristics of the CR-39 SSNTD for light ions: Present status of the Besancon-Dresden approaches, Radiat. Meas. 31 (1999) 89-98. Function (3): K.N. Yu, F.M.F. Ng, D. Nikezic, Measuring depths of sub-micron tracks in a CR-39 detector from replicas using atomic force microscopy, Radiat. Meas. 40 (2005) 380-383. For the LR 115 detector: Function (1): S.A. Durrani, P.F. Green, The effect of etching conditions on the response of LR 115, Nucl. Tracks 8 (1984) 21-24. Function (2): C.W.Y. Yip, D. Nikezic, J.P.Y Ho, K.N. Yu, Chemical etching characteristics for cellulose nitrate, Mat. Chem. Phys. 95 (2005) 307-312. Running time: Order of several minutes, dependent on input parameters and the resolution requested by the user.

Perforated semiconductor neutron detectors for battery operated portable modules

NASA Astrophysics Data System (ADS)

McGregor, Douglas S.; Bellinger, Steven L.; Bruno, David; McNeil, Walter J.; Patterson, Eric; Shultis, J. Kenneth; Solomon, C. J.; Unruh, Troy

2007-09-01

Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma (ICP) reactive ion etching (RIE) and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The prototype devices delivered over 3.8% thermal neutron detection efficiency while operating on only 15 volts. The highest efficiency devices thus far have delivered over 12% thermal neutron detection efficiency. The miniature devices are 5.6 mm in diameter and require minimal power to operate, ranging from 3.3 volts to 15 volts, depending upon the amplifying electronics. The battery operated devices have been incorporated into compact modules with a digital readout. Further, the new modules have incorporated wireless readout technology and can be monitored remotely. The neutron detection modules can be used for neutron dosimetry and neutron monitoring. When coupled with high-density polyethylene, the detectors can be used to measure fission neutrons from spontaneous fission sources. Monto Carlo analysis indicates that the devices can be used in cargo containers as a passive search tool for spontaneous fission sources, such as 240Pu. Measurements with a 252Cf source are being conducted for verification.

A study of commercially-available polyethylene terephthalate (PET) and polycarbonate as nuclear track detector materials

NASA Astrophysics Data System (ADS)

Espinosa, G.; Golzarri, J. I.; Vazquez-Lopez, C.; Trejo, R.; Lopez, K.; Rickards, J.

2014-07-01

In the study of the sensitivity of materials to be used as nuclear track detectors, it was found that commercial polyethylene terephthalate (PET) from Ciel® water bottles, commercial roof cover polycarbonate, and recycled packaging strips (recycled PET), can be used as nuclear track detectors. These three commercial materials present nuclear tracks when bombarded by 2.27 MeV nitrogen ions produced in a Pelletron particle accelerator, and by fission fragments from a 252Cf source (79.4 and 103.8 MeV), after a chemical etching with a 6.25M KOH solution, or with a 6.25M KOH solution with 20% methanol, both solutions at 60±1°C. As an example, the nitrogen ions deposit approximately 1 keV/nm in the form of ionization and excitation at the surface of PET, as calculated using the SRIM code. The fission fragments deposit up to 9 keV/nm at the surface, in both cases generating sufficient free radicals to initiate the track formation process. However, 5 MeV alpha particles, typical of radon (222Rn) emissions, deposit only 0.12 keV/nm, do not present tracks after the chemical etching process. This valuable information could be very useful for further studies of new materials in nuclear track methodology.

A neutron track etch detector for electron linear accelerators in radiotherapy

PubMed Central

Vukovic, Branko; Faj, Dario; Poje, Marina; Varga, Maja; Radolic, Vanja; Miklavcic, Igor; Ivkovic, Ana; Planinic, Josip

2010-01-01

Background Electron linear accelerators in medical radiotherapy have replaced cobalt and caesium sources of radiation. However, medical accelerators with photon energies over 10 MeV generate undesired fast neutron contamination in a therapeutic X-ray photon beam. Photons with energies above 10 MeV can interact with the atomic nucleus of a high-Z material, of which the target and the head of an accelerator consist, and lead to the neutron ejection. Results and conclusions. Our neutron dosimeter, composed of the LR-115 track etch detector and boron foil BN-1 converter, was calibrated on thermal neutrons generated in the nuclear reactor of the Josef Stefan Institute (Slovenia), and applied to dosimetry of undesirable neutrons in photon radiotherapy by the linear accelerator 15 MV Siemens Mevatron. Having considered a high dependence of a cross-section between neutron and boron on neutron energy, and broad neutron spectrum in a photon beam, as well as outside the entrance door to maze of the Mevatron, we developed a method for determining the effective neutron detector response. A neutron dose rate in the photon beam was measured to be 1.96 Sv/h. Outside the Mevatron room the neutron dose rate was 0.62 μSv/h. PACS: 87.52. Ga; 87.53.St; 29.40.Wk. PMID:22933893

Characterization of HgCdTe and Related Materials For Third Generation Infrared Detectors

NASA Astrophysics Data System (ADS)

Vaghayenegar, Majid

Hg1-xCdxTe (MCT) has historically been the primary material used for infrared detectors. Recently, alternative substrates for MCT growth such as Si, as well as alternative infrared materials such as Hg1-xCdxSe, have been explored. This dissertation involves characterization of Hg-based infrared materials for third generation infrared detectors using a wide range of transmission electron microscopy (TEM) techniques. A microstructural study on HgCdTe/CdTe heterostructures grown by MBE on Si (211) substrates showed a thin ZnTe layer grown between CdTe and Si to mediate the large lattice mismatch of 19.5%. Observations showed large dislocation densities at the CdTe/ZnTe/Si (211) interfaces, which dropped off rapidly away from the interface. Growth of a thin HgTe buffer layer between HgCdTe and CdTe layers seemed to improve the HgCdTe layer quality by blocking some defects. A second study investigated the correlation of etch pits and dislocations in as-grown and thermal-cycle-annealed (TCA) HgCdTe (211) films. For as-grown samples, pits with triangular and fish-eye shapes were associated with Frank partial and perfect dislocations, respectively. Skew pits were determined to have a more complex nature. TCA reduced the etch-pit density by 72%. Although TCA processing eliminated the fish-eye pits, dislocations reappeared in shorter segments in the TCA samples. Large pits were observed in both as-grown and TCA samples, but the nature of any defects associated with these pits in the as-grown samples is unclear. Microstructural studies of HgCdSe revealed large dislocation density at ZnTe/Si(211) interfaces, which dropped off markedly with ZnTe thickness. Atomic-resolution STEM images showed that the large lattice mismatch at the ZnTe/Si interface was accommodated through {111}-type stacking faults. A detailed analysis showed that the stacking faults were inclined at angles of 19.5 and 90 degrees at both ZnTe/Si and HgCdSe/ZnTe interfaces. These stacking faults were associated with Shockley and Frank partial dislocations, respectively. Initial attempts to delineate individual dislocations by chemical etching revealed that while the etchants successfully attacked defective areas, many defects in close proximity to the pits were unaffected.

Picosecond UV single photon detectors with lateral drift field: Concept and technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakimov, M.; Oktyabrsky, S.; Murat, P.

2015-09-01

Group III–V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III–V processing technologies, such as interface and surface passivation, large area deep submicron lithography with high-aspect ratio etching primarily driven by the metal-oxide-semiconductor field-effect transistor development can also be used for other applications. In this paper we will focus on photodetectors with the drift field parallel to the surface. We compare the proposed concept to the state-of-the-art Si-based technology and discuss requirements which need to be satisfied for such detectors to be used in a single photon counting modemore » in blue and ultraviolet spectral region with about 10 ps photon timing resolution essential for numerous applications ranging from high-energy physics to medical imaging.« less

Ultrastructure of the surface of dental enamel with molar incisor hypomineralization (MIH) with and without acid etching.

PubMed

Bozal, Carola B; Kaplan, Andrea; Ortolani, Andrea; Cortese, Silvina G; Biondi, Ana M

2015-01-01

The aim of the present work was to analyze the ultrastructure and mineral composition of the surface of the enamel on a molar with MIH, with and without acid etching. A permanent tooth without clinical MIH lesions (control) and a tooth with clinical diagnosis of mild and moderate MIH, with indication for extraction, were processed with and without acid etching (H3PO4 37%, 20") for observation with scanning electron microscope (SEM) ZEISS (Supra 40) and mineral composition analysis with an EDS detector (Oxford Instruments). The control enamel showed normal prismatic surface and etching pattern. The clinically healthy enamel on the tooth with MIH revealed partial loss of prismatic pattern. The mild lesion was porous with occasional cracks. The moderate lesion was more porous, with larger cracks and many scales. The mineral composition of the affected surfaces had lower Ca and P content and higher O and C. On the tooth with MIH, even on normal looking enamel, the demineralization does not correspond to an etching pattern, and exhibits exposure of crystals with rods with rounded ends and less demineralization in the inter-prismatic spaces. Acid etching increased the presence of cracks and deep pores in the adamantine structure of the enamel with lesion. In moderate lesions, the mineral composition had higher content of Ca, P and Cl. Enamel with MIH, even on clinically intact adamantine surfaces, shows severe alterations in the ultrastructure and changes in ionic composition, which affect the acid etching pattern and may interfere with adhesion.

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

The fabrication of nitrogen detector porous silicon nanostructures

NASA Astrophysics Data System (ADS)

Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

Type II superlattice technology for LWIR detectors

NASA Astrophysics Data System (ADS)

Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

2016-05-01

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

Design and Fabrication of the Second-Generation KID-Based Light Detectors of CALDER

NASA Astrophysics Data System (ADS)

Colantoni, I.; Cardani, L.; Casali, N.; Cruciani, A.; Bellini, F.; Castellano, M. G.; Cosmelli, C.; D'Addabbo, A.; Di Domizio, S.; Martinez, M.; Tomei, C.; Vignati, M.

2018-04-01

The goal of the cryogenic wide-area light detectors with excellent resolution project is the development of light detectors with large active area and noise energy resolution smaller than 20 eV RMS using phonon-mediated kinetic inductance detectors (KIDs). The detectors are developed to improve the background suppression in large-mass bolometric experiments such as CUORE, via the double readout of the light and the heat released by particles interacting in the bolometers. In this work we present the fabrication process, starting from the silicon wafer arriving to the single chip. In the first part of the project, we designed and fabricated KID detectors using aluminum. Detectors are designed by means of state-of-the-art software for electromagnetic analysis (SONNET). The Al thin films (40 nm) are evaporated on high-quality, high-resistivity (> 10 kΩ cm) Si(100) substrates using an electron beam evaporator in a HV chamber. Detectors are patterned in direct-write mode, using electron beam lithography (EBL), positive tone resist poly-methyl methacrylate and lift-off process. Finally, the chip is diced into 20 × 20 mm2 chips and assembled in a holder OFHC (oxygen-free high conductivity) copper using PTFE support. To increase the energy resolution of our detectors, we are changing the superconductor to sub-stoichiometric TiN (TiN x ) deposited by means of DC magnetron sputtering. We are optimizing its deposition by means of DC magnetron reactive sputtering. For this kind of material, the fabrication process is subtractive and consists of EBL patterning through negative tone resist AR-N 7700 and deep reactive ion etching. Critical temperature of TiN x samples was measured in a dedicated cryostat.

MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

NASA Astrophysics Data System (ADS)

Wasisto, Hutomo Suryo; Merzsch, Stephan; Waag, Andreas; Peiner, Erwin

2013-05-01

The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 +/- 0.04 kHz and a quality factor of 1302 +/- 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

PubMed

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

NASA Astrophysics Data System (ADS)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications

NASA Astrophysics Data System (ADS)

Lin, Yiding; Ma, Danhao; Lee, Kwang Hong; Michel, Jurgen; Tan, Chuan Seng

2018-02-01

A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.

Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossain,A.; Babalola, S.; Bolotnikov, A.E.

2008-08-11

Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 {micro}m and/or lower grits of Al{sub 2}O{sub 3} abrasive papers including final polishing with 0.05-{micro}m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO{sub 3}:H{sub 2}O:Cr{submore » 2}O{sub 7}). The material removal rate (etching rate) from the crystals was found to be 10 {micro}m, 30 {micro}m, and 15 {micro}m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.« less

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

NASA Astrophysics Data System (ADS)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching

NASA Astrophysics Data System (ADS)

Kwon, Yongbeom; Lee, Geonyeop; Oh, Sooyeoun; Kim, Jihyun; Pearton, Stephen J.; Ren, Fan

2017-03-01

We demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique. Mechanical exfoliation of the bulk β-Ga2O3 by using an adhesive tape was followed by plasma etching to tune its thickness. Since β-Ga2O3 is not a van der Waals material, it is challenging to obtain ultra-thin flakes below a thickness of 100 nm. In this study, an etch rate of approximately 16 nm/min was achieved at a power of 200 W with a flow of 50 sccm of SF6, and under these conditions, thinning of β-Ga2O3 flakes from 300 nm down to ˜60 nm was achieved with smooth morphology. We believe that the reaction between SF6 and Ga2O3 results in oxygen and volatile oxygen fluoride compounds, and non-volatile compounds such as GaFX that can be removed by ion bombardment. The opto-electrical properties were also characterized by fabricating solar-blind photodetectors using the plasma-thinned β-Ga2O3 flakes; these detectors showed fast response and decay with excellent responsivity and selectivity. Our results pave the way for tuning the thickness of two-dimensional materials by using this scalable, industry-compatible dry etching technique.

Fabrication of universal serial bus flash disk type microfluidic chip electrophoresis and application for protein analysis under ultra low voltage

PubMed Central

Cong, Hailin; Xu, Xiaodan; Yu, Bing; Liu, Huwei

2016-01-01

A simple and effective universal serial bus (USB) flash disk type microfluidic chip electrophoresis (MCE) was developed by using poly(dimethylsiloxane) based soft lithography and dry film based printed circuit board etching techniques in this paper. The MCE had a microchannel diameter of 375 μm and an effective length of 25 mm. Equipped with a conventional online electrochemical detector, the device enabled effectively separation of bovine serum albumin, lysozyme, and cytochrome c in 80 s under the ultra low voltage from a computer USB interface. Compared with traditional capillary electrophoresis, the USB flash disk type MCE is not only portable and inexpensive but also fast with high separation efficiency. PMID:27042249

On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors

NASA Astrophysics Data System (ADS)

Darken, L.

1994-02-01

The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood.

Introducing etch kernels for efficient pattern sampling and etch bias prediction

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2018-01-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Lee, Jaesoong; Ni, Xianfeng; Leach, Jacob; Özgür, Ümit; Morkoç, Hadis

2011-02-01

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

Design and optimization of a novel 3D detector: The 3D-open-shell-electrode detector

NASA Astrophysics Data System (ADS)

Liu, Manwen; Tan, Jian; Li, Zheng

2018-04-01

A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is proposed in this study. In a 3DOSED, the trench electrode can be etched all the way through the detector thickness, totally eliminating the low electric field region existed in the conventional 3D-Trench-Electrode detector. Full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Through comparing of the simulation results of the detector, we can obtain the best design of the 3SOSED. In addition, simulation results show that, as compared to the conventional 3D detector, the proposed 3DOSED can improve not only detector charge collection efficiency but also its radiation hardness with regard to solving the trapping problem in the detector bulk. What is more, it has been shown that detector full depletion voltage is also slightly reduced, which can improve the utility aspects of the detector. When compared to the conventional 3D detector, we find that the proposed novel 3DOSED structure has better electric potential and electric field distributions, and better electrical properties such as detector full depletion voltage. In 3DOSED array, each pixel cell is isolated from each other by highly doped trenches, but also electrically and physically connected with each other through the remaining silicon bulk between broken electrodes.

Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Rosa, Alessandro; /CERN; Boscardin, M.

2012-04-04

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3)more » at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.« less

MBE Regrowth of a Laterally-biased Double Quantum Well Tunable Detector

DTIC Science & Technology

2010-06-01

with 9 sccm of Ar, 9 sccm of  SiCl4  and with a power of 107 W. With these parameters, DC Bias  of 340 V was obtained and the pressure during the etching...regrowth of a laterally‐biased double quantum well tunable detector– Final Report  2010  29    The etching can be performed using only  SiCl4 , but by...following AFM images show GaAs surfaces after an etching of 500nm:                125 W, 1,5 sccm Ar, 15 sccm  SiCl4   MBE regrowth of a laterally‐biased

The millimeter wave super-Schottky diode detector

NASA Technical Reports Server (NTRS)

Silver, A. H.; Pedersen, R. J.; Mccoll, M.; Dickman, R. L.; Wilson, W. J.

1981-01-01

The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.

Monopole-track characteristics in plastic detectors

NASA Technical Reports Server (NTRS)

Ahlen, S. P.

1976-01-01

Total and restricted energy loss rates are calculated for magnetic monopoles of charge g = 137 e in Lexan polycarbonate. Range-energy curves are also presented. The restricted-energy-loss model is used to estimate the appearance of a monopole track in plastic detectors. The results are applied to the event observed by Price et al. and identified by them as a monopole. It is found that the observed etch rate is consistent with what one would expect for a slow magnetic monopole. These results should also be of use to other investigators for both the design and analysis of monopole experiments.

Detection of Hydrofluoric Acid by a SiO2 Sol-Gel Coating Fiber-Optic Probe Based on Reflection-Based Localized Surface Plasmon Resonance

PubMed Central

Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Du, Je-Kang

2011-01-01

A novel fiber-optic probe based on reflection-based localized surface plasmon resonance (LSPR) was developed to quantify the concentration of hydrofluoric acid (HF) in aqueous solutions. The LSPR sensor was constructed with a gold nanoparticle-modified PMMA fiber, integrated with a SiO2 sol-gel coating. This fiber-sensor was utilized to assess the relationship between HF concentration and SiO2 sol-gel layer etching reduction. The results demonstrated the LSPR sensor was capable of detecting HF-related erosion of hydrofluoric acid solutions of concentrations ranging from 1% to 5% using Relative RI Change Rates. The development of the LSPR sensor constitutes the basis of a detector with significant sensitivity for practical use in monitoring HF solution concentrations. PMID:22319388

Enhanced photo-response of porous silicon photo-detectors by embeddingTitanium-dioxide nano-particles

NASA Astrophysics Data System (ADS)

Ali, Hiba M.; Makki, Sameer A.; Abd, Ahmed N.

2018-05-01

Porous silicon (n-PS) films can be prepared by photoelectochemical etching (PECE) Silicon chips n - types with 15 (mA / cm2), in 15 minutes etching time on the fabrication nano-sized pore arrangement. By using X-ray diffraction measurement and atomic power microscopy characteristics (AFM), PS was investigated. It was also evaluated the crystallites size from (XRD) for the PS nanoscale. The atomic force microscopy confirmed the nano-metric size chemical fictionalization through the electrochemical etching that was shown on the PS surface chemical composition. The atomic power microscopy checks showed the roughness of the silicon surface. It is also notified (TiO2) preparation nano-particles that were prepared by pulse laser eradication in ethanol (PLAL) technique through irradiation with a Nd:YAG laser pulses TiO2 target that is sunk in methanol using 400 mJ of laser energy. It has been studied the structural, optical and morphological of TiO2NPs. It has been detected that through XRD measurement, (TiO2) NPs have been Tetragonal crystal structure. While with AFM measurements, it has been realized that the synthesized TiO2 particles are spherical with an average particle size in the (82 nm) range. It has been determined that the energy band gap of TiO2 NPs from optical properties and set to be in (5eV) range.The transmittance and reflectance spectra have determined the TiO2 NPs optical constants. It was reported the effectiveness of TiO2 NPs expansion on the PS Photodetector properties which exposes the benefits in (Al/PS/Si/Al). The built-in tension values depend on the etching time current density and laser flounce. Al/TiO2/PS/Si/Al photo-detector heterojunction have two response peaks that are situated at 350 nm and (700 -800nm) with max sensitivity ≈ 0.7 A/W. The maximum given detectivity is 9.38at ≈ 780 nm wavelength.

Photonic crystal scintillators and methods of manufacture

DOEpatents

Torres, Ricardo D.; Sexton, Lindsay T.; Fuentes, Roderick E.; Cortes-Concepcion, Jose

2015-08-11

Photonic crystal scintillators and their methods of manufacture are provided. Exemplary methods of manufacture include using a highly-ordered porous anodic alumina membrane as a pattern transfer mask for either the etching of underlying material or for the deposition of additional material onto the surface of a scintillator. Exemplary detectors utilizing such photonic crystal scintillators are also provided.

Evaluating the shear bond strength of enamel and dentin with or without etching: A comparative study between dimethacrylate-based and silorane-based adhesives

PubMed Central

Hajizadeh, Hila; Nasseh, Atefeh; Rahmanpour, Naim

2015-01-01

Background Silorane-based composites and their specific self-etch adhesive were introduced to conquest the polymerization shrinkage of methacrylate-based composites. It has been shown that additional etching of enamel and dentin can improve the bond strength of self-etch methacrylate-based adhesives but this claim is not apparent about silorane-based adhesives. Our objective was to compare the shear bond strength (SBS) of enamel and dentin between silorane-based adhesive resin and a methacrylate-based resin with or without additional etching. Material and Methods 40 sound human premolars were prepared and divided into two groups: 1- Filtek P60 composite and Clearfil SE Bond adhesive; 2- Filtek P90 composite and Silorane adhesive. Each group divided into two subgroups: with or without additional etching. For additional etching, 37% acid phosphoric was applied before bonding procedure. A cylinder of the composite was bonded to the surface. After 24 hours storage and 500 thermo cycling between 5-55°C, shear bond strength was assessed with the cross head speed of 0.5 mm/min. Then, bonded surfaces were observed under stereomicroscope to determine the failure mode. Data were analyzed with two-way ANOVA and Fischer exact test. Results Shear bond strength of Filtek P60 composite was significantly higher than Filtek P90 composite both in enamel and dentin surfaces (P<0.05). However, additional etching had no significant effect on shear bond strength in enamel or dentin for each of the composites (P>0.05). There was no interaction between composite type and additional etching (P>0.05). Failure pattern was mainly adhesive and no significant correlation was found between failure and composite type or additional etching (P>0.05). Conclusions Shear bond strength of methacrylate-based composite was significantly higher than silorane-based composite both in enamel and dentin surfaces and additional etching had no significant effect on shear bond strength in enamel or dentin for each of the composites. The mode of failure had no meaningful relation to the type of composite and etching factor. Key words:Shear bond strength, adhesive, composite resin, silorane, methacrylate. PMID:26644830

Microtensile bond strength of silorane-based composite specific adhesive system using different bonding strategies.

PubMed

Bastos, Laura Alves; Sousa, Ana Beatriz Silva; Drubi-Filho, Brahim; Panzeri Pires-de-Souza, Fernanda de Carvalho; Garcia, Lucas da Fonseca Roberti

2015-02-01

The aim of this study was to evaluate the effect of pre-etching on the bond strength of silorane-based composite specific adhesive system to dentin. Thirty human molars were randomly divided into 5 groups according to the different bonding strategies. For teeth restored with silorane-based composite (Filtek Silorane, 3M ESPE), the specific self-etching adhesive system (Adhesive System P90, 3M ESPE) was used with and without pre-etching (Pre-etching/Silorane and Silorane groups). Teeth restored with methacrylate based-composite (Filtek Z250, 3M ESPE) were hybridized with the two-step self-etching system (Clearfil SE Bond, Kuraray), with and without pre-etching (Pre-etching/Methacrylate and Methacrylate groups), or three-step adhesive system (Adper Scotchbond Multi-Purpose, 3M ESPE) (Three-step/Methacrylate group) (n = 6). The restored teeth were sectioned into stick-shaped test specimens (1.0 × 1.0 mm), and coupled to a universal test machine (0.5 mm/min) to perform microtensile testing. Pre-etching/Methacrylate group presented the highest bond strength values, with significant difference from Silorane and Three-step/Methacrylate groups (p < 0.05). However, it was not significantly different from Preetching/Silorane and Methacrylate groups. Pre-etching increased bond strength of silorane-based composite specific adhesive system to dentin.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Indoor concentration of radon, thoron and their progeny around granite regions in the state of Karnataka, India.

PubMed

Sannappa, J; Ningappa, C

2014-03-01

An extensive studies on the indoor activity concentrations of thoron, radon and their progeny in the granite region in the state of Karnataka, India, has been carried out since, 2007 in the scope of a lung cancer epidemiological study using solid-state nuclear track detector-based double-chamber dosemeters (LR-115, type II plastic track detector). Seventy-four dwellings of different types were selected for the measurement. The dosemeters containing SSNTD detectors were fixed 2 m above the floor. After an exposure time of 3 months (90 d), films were etched to reveal tracks. From the track density, the concentrations of radon and thoron were evaluated. The value of the indoor concentration of thoron and radon in the study area varies from 16 to 170 Bq m(-3) and 18 to 300 Bq m(-3) with medians of 66 and 82.3 Bq m(-3), respectively, and that of their progeny varies from 1.8 to 24 mWL with a median of 3.6 mWL and 1.6 to 19.6 mWL, respectively. The concentrations of indoor thoron, radon and their progeny and their equivalent effective doses are discussed.

Confocal Raman spectroscopy and AFM for evaluation of sidewalls in type II superlattice FPAs

NASA Astrophysics Data System (ADS)

Rotter, T. J.; Busani, T.; Rathi, P.; Jaeckel, F.; Reyes, P. A.; Malloy, K. J.; Ukhanov, A. A.; Plis, E.; Krishna, S.; Jaime-Vasquez, M.; Baril, N. F.; Benson, J. D.; Tenne, D. A.

2015-06-01

We propose to utilize confocal Raman spectroscopy combined with high resolution atomic force microscopy (AFM) for nondestructive characterisation of the sidewalls of etched and passivated small pixel (24 μm×24 μm) focal plane arrays (FPA) fabricated using LW/LWIR InAs/GaSb type-II strained layer superlattice (T2SL) detector material. Special high aspect ratio Si and GaAs AFM probes, with tip length of 13 μm and tip aperture less than 7°, allow characterisation of the sidewall morphology. Confocal microscopy enables imaging of the sidewall profile through optical sectioning. Raman spectra measured on etched T2SL FPA single pixels enable us to quantify the non-uniformity of the mesa delineation process.

Realization of deep 3D metal electrodes in diamond radiation detectors

NASA Astrophysics Data System (ADS)

Wulz, Thomas; Gerding, William; Lavrik, Nickolay; Briggs, Dayrl; Srijanto, Bernadeta; Lester, Kevin; Hensley, Dale; Spanier, Stefan; Lukosi, Eric

2018-05-01

A fabrication technique to create 3D diamond detectors is presented. Deep reactive ion etching was used to create an array of through-diamond vias (TDVs) in a 2 × 2 × 0.15 mm3 electronic grade single crystal diamond detector. The diameter of the TDVs was nominally 30 μm with a pitch of 100 μm between them. The TDVs were filled with chromium using hexavalent chromium electroplating to create 3D electrodes, which were connected electrically by interdigitated electrodes. The fabricated 3D diamond detector responded to both alpha particles and X-rays, exhibiting a charge collection efficiency of 52.3% at 200 V. Comparing to a diamond detector with the same interdigitated electrodes, but no 3D electrodes, confirms that the 3D electrodes are electrically active within the device. The average resistivity of the 3D electrodes is 2.89 ± 0.03 × 10-5 Ω cm, near that of bulk chromium. These results indicate that this fabrication technique is a potential option for 3D diamond detector fabrication.

Difference in anisotropic etching characteristics of alkaline and copper based acid solutions for single-crystalline Si.

PubMed

Chen, Wei; Liu, Yaoping; Yang, Lixia; Wu, Juntao; Chen, Quansheng; Zhao, Yan; Wang, Yan; Du, Xiaolong

2018-02-21

The so called inverted pyramid arrays, outperforming conventional upright pyramid textures, have been successfully achieved by one-step Cu assisted chemical etching (CACE) for light reflection minimization in silicon solar cells. Due to the lower reduction potential of Cu 2+ /Cu and different electronic properties of different Si planes, the etching of Si substrate shows orientation-dependent. Different from the upright pyramid obtained by alkaline solutions, the formation of inverted pyramid results from the coexistence of anisotropic etching and localized etching process. The obtained structure is bounded by Si {111} planes which have the lowest etching rate, no matter what orientation of Si substrate is. The Si etching rate and (100)/(111) etching ratio are quantitatively analyzed. The different behaviors of anisotropic etching of Si by alkaline and Cu based acid etchant have been systematically investigated.

Lead and uranium group abundances in cosmic rays

NASA Technical Reports Server (NTRS)

Yadav, J. S.; Perelygin, V. P.

1985-01-01

The importance of Lead and Uranium group abundances in cosmic rays is discussed in understanding their evolution and propagation. The electronic detectors can provide good charge resolution but poor data statistics. The plastic detectors can provide somewhat better statistics but charge resolution deteriorates. The extraterrestrial crystals can provide good statistics but with poor charge resolution. Recent studies of extraterrestrial crystals regarding their calibration to accelerated uranium ion beam and track etch kinetics are discussed. It is hoped that a charge resolution of two charge units can be achieved provided an additional parameter is taken into account. The prospects to study abundances of Lead group, Uranium group and superheavy element in extraterrestrial crystals are discussed, and usefulness of these studies in the light of studies with electronic and plastic detectors is assessed.

Charge, energy and LET spectra of high LET primary and secondary particles in CR-39 plastic nuclear track detectors of the P0006 experiment

NASA Technical Reports Server (NTRS)

Csige, I.; Frigo, L. A.; Benton, E. V.; Oda, K.

1995-01-01

We have measured the charge, energy and linear energy transfer (LET) spectra of about 800 high LET (LET(sub infinity) H2O greater than 50 keV/micron) particles in CR-39 plastic nuclear track detectors in the P0006 experiment of LDEF. Primary particles with residual range at the reference surface greater than about 2 microns and secondary particles produced in the detector material with total range greater than about 4 microns were measured. We have used a multi-etch technique and an internal calibration to identify and measure the energy of the particles at the reference surface. The LET spectrum was obtained from the charge and energy distribution of the particles.

Effects of chemo-mechanical polishing on CdZnTe X-ray and gamma-ray detectors

DOE PAGES

Egarievwe, Stephen E.; Hossain, Anwar; Okwechime, Ifechukwude O.; ...

2015-06-23

Here, mechanically polishing cadmium zinc telluride (CdZnTe) wafers for x-ray and gamma-ray detectors often is inadequate in removing surface defects caused by cutting them from the ingots. Fabrication-induced defects, such as surface roughness, dangling bonds, and nonstoichiometric surfaces, often are reduced through polishing and etching the surface. In our earlier studies of mechanical polishing with alumina powder, etching with hydrogen bromide in hydrogen peroxide solution, and chemomechanical polishing with bromine–methanol–ethylene glycol solution, we found that the chemomechanical polishing process produced the least surface leakage current. In this research, we focused on using two chemicals to chemomechanically polish CdZnTe wafers aftermore » mechanical polishing, viz. bromine–methanol–ethylene glycol (BME) solution, and hydrogen bromide (HBr) in a hydrogen peroxide and ethylene–glycol solution. We used x-ray photoelectron spectroscopy (XPS), current–voltage (I–V) measurements, and Am-241 spectral response measurements to characterize and compare the effects of each solution. The results show that the HBr-based solution produced lower leakage current than the BME solution. Results from using the same chemomechanical polishing solution on two samples confirmed that the surface treatment affects the measured bulk current (a combination of bulk and surface currents). XPS results indicate that the tellurium oxide to tellurium peak ratios for the mechanical polishing process were reduced significantly by chemomechanical polishing using the BME solution (78.9% for Te 3d 5/2O 2 and 76.7% for Te 3d 3/2O 2) compared with the HBr-based solution (27.6% for Te 3d 5/2O 2 and 35.8% for Te 3d 3/2O 2). Spectral response measurements showed that the 59.5-keV peak of Am-241 remained under the same channel number for all three CdZnTe samples. While the BME-based solution gave a better performance of 7.15% full-width at half-maximum (FWHM) compared with 7.59% FWHM for the HBr-based solution, the latter showed a smaller variation in performance of 0.39% FWHM over 7 days compared with 0.69% for the BME-based solution.« less

Microtensile bond strength of silorane-based composite specific adhesive system using different bonding strategies

PubMed Central

Bastos, Laura Alves; Sousa, Ana Beatriz Silva; Drubi-Filho, Brahim; Panzeri Pires-de-Souza, Fernanda de Carvalho

2015-01-01

Objectives The aim of this study was to evaluate the effect of pre-etching on the bond strength of silorane-based composite specific adhesive system to dentin. Materials and Methods Thirty human molars were randomly divided into 5 groups according to the different bonding strategies. For teeth restored with silorane-based composite (Filtek Silorane, 3M ESPE), the specific self-etching adhesive system (Adhesive System P90, 3M ESPE) was used with and without pre-etching (Pre-etching/Silorane and Silorane groups). Teeth restored with methacrylate based-composite (Filtek Z250, 3M ESPE) were hybridized with the two-step self-etching system (Clearfil SE Bond, Kuraray), with and without pre-etching (Pre-etching/Methacrylate and Methacrylate groups), or three-step adhesive system (Adper Scotchbond Multi-Purpose, 3M ESPE) (Three-step/Methacrylate group) (n = 6). The restored teeth were sectioned into stick-shaped test specimens (1.0 × 1.0 mm), and coupled to a universal test machine (0.5 mm/min) to perform microtensile testing. Results Pre-etching/Methacrylate group presented the highest bond strength values, with significant difference from Silorane and Three-step/Methacrylate groups (p < 0.05). However, it was not significantly different from Preetching/Silorane and Methacrylate groups. Conclusions Pre-etching increased bond strength of silorane-based composite specific adhesive system to dentin. PMID:25671209

Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

PubMed

Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

2015-10-01

A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

Mechanisms of Hydrocarbon Based Polymer Etch

NASA Astrophysics Data System (ADS)

Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

2015-09-01

Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

Oxidation/reduction reactions at the metal contact-TlBr interface: an x-ray photoelectron spectroscopy study

NASA Astrophysics Data System (ADS)

Nelson, A. J.; Swanberg, E. L.; Voss, L. F.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Kim, H.; Cirignano, L.; Shah, K.

2014-09-01

TlBr radiation detector operation degrades with time at room temperature and is thought to be due to electromigration of Tl and Br vacancies within the crystal as well as the metal contacts migrating into the TlBr crystal itself due to electrochemical reactions at the metal/TlBr interface. X-ray photoemission spectroscopy (XPS) was used to investigate the metal contact surface/interfacial structure on TlBr devices. Device-grade TlBr was polished and subjected to a 32% HCl etch to remove surface damage prior to Mo or Pt contact deposition. High-resolution photoemission measurements on the Tl 4f, Br 3d, Cl 2p, Mo 3d and Pt 4f core lines were used to evaluate surface chemistry and non-equilibrium interfacial diffusion. Results indicate that anion substitution at the TlBr surface due to the HCl etch forms TlBr1-xClx with consequent formation of a shallow heterojunction. In addition, a reduction of Tl1+ to Tl0 is observed at the metal contacts after device operation in both air and N2 at ambient temperature. Understanding contact/device degradation versus operating environment is useful for improving radiation detector performance.

Low level determination of (226)Ra in water using a micro-precipitate track method for large-scale environmental monitoring.

PubMed

Taheri, M; Sohrabi, M; Jaleh, B; Hosseini, T; Montazer Rahmati, M M

2009-12-01

In the present paper a method has been developed for the determination of (226)Ra in water by the detection, using a solid-state nuclear track detector (SSNTD), of alpha particles from (226)Ra in equilibrium with (222)Rn in micro-precipitates collected on a filter. The micro-precipitates were prepared from environmental water samples by collection of radium with lead as Pb/RaSO(4). Several factors affect the (226)Ra precipitation on the filter and its recovery, in particular the filter pore size. Therefore in this experiment Whatman #42 and Millipore filters with different pore sizes were used. Using a 0.45 microm Millipore filter, the recovery efficiency was increased up to 96%, and the alpha self-absorption and scattering decreased remarkably. For efficient detection of alphas from (226)Ra/(222)Rn in equilibrium, three types of SSNTD were used-polycarbonate (PC) electrochemically etched (ECE), CR-39 and LR-115 chemically etched (CE). By preparing a standard micro-precipitate on a filter with known (226)Ra/(222)Rn characteristics, the calibration response of each detector and its minimum detection limit (MDL) were determined.

Large area thinned planar sensors for future high-luminosity-LHC upgrades

NASA Astrophysics Data System (ADS)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-12-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

Pattern sampling for etch model calibration

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2017-06-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels as well as the choice of calibration patterns is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels -"internal, external, curvature, Gaussian, z_profile" - designed to capture the finest details of the resist contours and represent precisely any etch bias. By evaluating the etch kernels on various structures it is possible to map their etch signatures in a multi-dimensional space and analyze them to find an optimal sampling of structures to train an etch model. The method was specifically applied to a contact layer containing many different geometries and was used to successfully select appropriate calibration structures. The proposed kernels evaluated on these structures were combined to train an etch model significantly better than the standard one. We also illustrate the usage of the specific kernel "z_profile" which adds a third dimension to the description of the resist profile.

Mass spectrometry analysis of etch products from CR-39 plastic irradiated by heavy ions

NASA Astrophysics Data System (ADS)

Kodaira, S.; Nanjo, D.; Kawashima, H.; Yasuda, N.; Konishi, T.; Kurano, M.; Kitamura, H.; Uchihori, Y.; Naka, S.; Ota, S.; Ideguchi, Y.; Hasebe, N.; Mori, Y.; Yamauchi, T.

2012-09-01

As a feasibility study, gas chromatography-mass spectrometry (GC-MS) and matrix-assisted laser desorption ionization-mass spectrometry (MALDI-MS) have been applied to analyze etch products of CR-39 plastic (one of the most frequently used solid states nuclear track detector) for the understanding of track formation and etching mechanisms by heavy ion irradiation. The etch products of irradiated CR-39 dissolved in sodium hydroxide solution (NaOH) contain radiation-induced fragments. For the GC-MS analysis, we found peaks of diethylene glycol (DEG) and a small but a definitive peak of ethylene glycol (EG) in the etch products from CR-39 irradiated by 60 MeV N ion beams. The etch products of unirradiated CR-39 showed a clear peak of DEG, but no other significant peaks were found. DEG is known to be released from the CR-39 molecule as a fragment by alkaline hydrolysis reaction of the polymer. We postulate that EG was formed as a result of the breaking of the ether bond (C-O-C) of the DEG part of the CR-39 polymer by the irradiation. The mass distribution of polyallylalcohol was obtained from the etch products from irradiated and unirradiated CR-39 samples by MALDI-MS analysis. Polyallylalcohol, with the repeating mass interval of m/z = 58 Da (dalton) between m/z = 800 and 3500, was expected to be produced from CR-39 by alkaline hydrolysis. We used IAA as a matrix to assist the ionization of organic analyte in MALDI-MS analysis and found that peaks from IAA covered mass spectrum in the lower m/z region making difficult to identify CR-39 fragment peaks which were also be seen in the same region. The mass spectrometry analysis using GC-MS and MALDI-MS will be powerful tools to investigate the radiation-induced polymeric fragments and helping to understand the track formation mechanism in CR-39 by heavy ions.

Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

PubMed

Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

2012-05-01

A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

Consideration of VT5 etch-based OPC modeling

NASA Astrophysics Data System (ADS)

Lim, ChinTeong; Temchenko, Vlad; Kaiser, Dieter; Meusel, Ingo; Schmidt, Sebastian; Schneider, Jens; Niehoff, Martin

2008-03-01

Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.

Design and fabrication of a novel self-powered solid-state neutron detector

NASA Astrophysics Data System (ADS)

LiCausi, Nicholas

There is a strong interest in intercepting special nuclear materials (SNM) at national and international borders and ports for homeland security applications. Detection of SNM such as U and Pu is often accomplished by sensing their natural or induced neutron emission. Such detector systems typically use thermal neutron detectors inside a plastic moderator. In order to achieve high detection efficiency gas filled detectors are often used; these detectors require high voltage bias for operation, which complicates the system when tens or hundreds of detectors are deployed. A better type of detector would be an inexpensive solid-state detector that can be mass-produced like any other computer chip. Research surrounding solid-state detectors has been underway since the late 1990's. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion material that converts incident thermal neutrons into detectable alpha-particles and 7Li ions. Existing work has typically used 6LiF or 10B as this conversion layer. Although a simple planar detector can act as a highly portable, low cost detector, it is limited to relatively low detection efficiency (˜10%). To increase the efficiency, 3D perforated p-i-n silicon devices were proposed. To get high efficiency, these detectors need to be biased, resulting in increased leakage current and hence detector noise. In this research, a new type of detector structure was proposed, designed and fabricated. Among several detector structures evaluated, a honeycomb-like silicon p-n structure was selected, which is filled with natural boron as the neutron converter. A silicon p+-n diode formed on the thin silicon wall of the honeycomb structure detects the energetic alpha-particles emitted from the boron conversion layer. The silicon detection layer is fabricated to be fully depleted with an integral step during the boron filling process. This novel feature results in a simplified fabrication process. Three key advantages of the novel devices are theoretical neutron detection efficiency of ˜48%, a self-passivating structure that reduces leakage current and detector operation with no bias resulting in extremely low device noise. Processes required to fabricate the 3D type detector were explored and developed in this thesis. The detector capacitance and processing steps have been simulated with MEDICI and TSuprem-4, respectively. Lithography masks were then designed using Cadence. The fabrication process development was conducted in line with standard CMOS grade integrated circuit processing to allow for simple integration with existing fabrication facilities. A number of new processes were developed including the low pressure chemical vapor deposition of conformal boron films using diborane on very high aspect-ratio trenches and holes. Development also included methods for "wet" chemical etching and "dry" reactive ion etching of the deposited boron films. Fabricated detectors were characterized with the transmission line method, 4-point probe, I-V measurements and C-V measurements. Finally the detector response to thermal neutrons was studied. Characterization has shown significant reduction in reverse leakage current density to ˜8x10-8 A/cm2 (nearly 4 orders of magnitude over the previously published data). Results show that the fabrication process developed is capable of producing efficient (˜22.5%) solid-state thermal neutron detectors.

Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit.

PubMed

Yeon, Seunghwan; Son, Taejoon; Shin, Dong Su; Jung, Kyung-Young; Park, Jinsub

2015-07-01

We report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs.

Dry etching technologies for the advanced binary film

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

GPU based 3D feature profile simulation of high-aspect ratio contact hole etch process under fluorocarbon plasmas

NASA Astrophysics Data System (ADS)

Chun, Poo-Reum; Lee, Se-Ah; Yook, Yeong-Geun; Choi, Kwang-Sung; Cho, Deog-Geun; Yu, Dong-Hun; Chang, Won-Seok; Kwon, Deuk-Chul; Im, Yeon-Ho

2013-09-01

Although plasma etch profile simulation has been attracted much interest for developing reliable plasma etching, there still exist big gaps between current research status and predictable modeling due to the inherent complexity of plasma process. As an effort to address this issue, we present 3D feature profile simulation coupled with well-defined plasma-surface kinetic model for silicon dioxide etching process under fluorocarbon plasmas. To capture the realistic plasma surface reaction behaviors, a polymer layer based surface kinetic model was proposed to consider the simultaneous polymer deposition and oxide etching. Finally, the realistic plasma surface model was used for calculation of speed function for 3D topology simulation, which consists of multiple level set based moving algorithm, and ballistic transport module. In addition, the time consumable computations in the ballistic transport calculation were improved drastically by GPU based numerical computation, leading to the real time computation. Finally, we demonstrated that the surface kinetic model could be coupled successfully for 3D etch profile simulations in high-aspect ratio contact hole plasma etching.

Wafer-fused semiconductor radiation detector

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

A combined analysis technique for the search for fast magnetic monopoles with the MACRO detector

NASA Astrophysics Data System (ADS)

MACRO Collaboration; Ambrosio, M.; Antolini, R.; Auriemma, G.; Bakari, D.; Baldini, A.; Barbarino, G. C.; Barish, B. C.; Battistoni, G.; Becherini, Y.; Bellotti, R.; Bemporad, C.; Bernardini, P.; Bilokon, H.; Bloise, C.; Bower, C.; Brigida, M.; Bussino, S.; Cafagna, F.; Calicchio, M.; Campana, D.; Carboni, M.; Caruso, R.; Cecchini, S.; Cei, F.; Chiarella, V.; Choudhary, B. C.; Coutu, S.; De Cataldo, G.; Dekhissi, H.; De Marzo, C.; De Mitri, I.; Derkaoui, J.; De Vincenzi, M.; DiCredico, A.; Erriquez, O.; Favuzzi, C.; Forti, C.; Fusco, P.; Giacomelli, G.; Giannini, G.; Giglietto, N.; Giorgini, M.; Grassi, M.; Grillo, A.; Guarino, F.; Gustavino, C.; Habig, A.; Heinz, R.; Iarocci, E.; Katsavounidis, E.; Katsavounidis, I.; Kearns, E.; Kim, H.; Kyriazopoulou, S.; Lamanna, E.; Lane, C.; Levin, D. S.; Lipari, P.; Longley, N. P.; Longo, M. J.; Loparco, F.; Maaroufi, F.; Mancarella, G.; Mandrioli, G.; Manzoor, S.; Margiotta, A.; Marini, A.; Martello, D.; Marzari-Chiesa, A.; Mazziotta, M. N.; Michael, D. G.; Monacelli, P.; Montaruli, T.; Monteno, M.; Mufson, S.; Musser, J.; Nicolò, D.; Nolty, R.; Orth, C.; Osteria, G.; Palamara, O.; Patera, V.; Patrizii, L.; Pazzi, R.; Peck, C. W.; Perrone, L.; Petrera, S.; Popa, V.; Reynoldson, J.; Ronga, F.; Rrhioua, A.; Satriano, C.; Scapparone, E.; Scholberg, K.; Sciubba, A.; Serra, P.; Sioli, M.; Sirri, G.; Sitta, M.; Spinelli, P.; Spinetti, M.; Spurio, M.; Steinberg, R.; Stone, J. L.; Sulak, L. R.; Surdo, A.; Tarlè, G.; Togo, V.; Vakili, M.; Walter, C. W.; Webb, R.

2002-08-01

We describe a search method for fast moving (β=v/c>5×10-3) magnetic monopoles using simultaneously the scintillator, streamer tube and track-etch subdetectors of the MACRO apparatus. The first two subdetectors are used primarily for the identification of candidates while the track-etch one is used as the final tool for their rejection or confirmation. Using this technique, a first sample of more than two years of data has been analyzed without any evidence of a magnetic monopole. We set a 90% CL upper limit to the local monopole flux of 1.5×10-15 cm-2s-1sr-1 in the velocity range 5×10-3<=β<=0.99 and for nucleon decay catalysis cross-section smaller than /~1 mb

Process for Fabrication of Superconducting Vias for Electrical Connection to Groundplane in Cryogenic Detectors

NASA Technical Reports Server (NTRS)

Denis, Kevin L. (Inventor)

2018-01-01

Disclosed are systems, methods, and non-transitory computer-readable storage media for fabrication of silicon on insulator (SOI) wafers with a superconductive via for electrical connection to a groundplane. Fabrication of the SOI wafer with a superconductive via can involve depositing a superconducting groundplane onto a substrate with the superconducting groundplane having an oxidizing layer and a non-oxidizing layer. A layer of monocrystalline silicon can be bonded to the superconducting groundplane and a photoresist layer can be applied to the layer of monocrystalline silicon and the SOI wafer can be etched with the oxygen rich etching plasma, resulting in a monocrystalline silicon top layer with a via that exposes the superconducting groundplane. Then, the fabrication can involve depositing a superconducting surface layer to cover the via.

Laser etching of austenitic stainless steels for micro-structural evaluation

NASA Astrophysics Data System (ADS)

Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

2015-06-01

Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

PubMed

Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells

PubMed Central

Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

2012-01-01

Abstract Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided. PMID:22162035

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

PubMed Central

Zhan, Zhan; Li, Wei; Yu, Lingke; Wang, Lingyun; Sun, Daoheng

2017-01-01

In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement. PMID:28772521

MEMS Cantilever Sensor for THz Photoacoustic Chemical Sensing and Spectroscopy

DTIC Science & Technology

2013-12-26

meaning the detector didn’t have to be cryogenically cooled. Piezoresistive cantilever style sensor designs have been fabricated for wind and...made a two cantilever pizeoresistive wind speed sensor that utilized a Wheatstone bridge configuration. The designed cantilevers, etched out of...Murakami et al. in Japan fabricated diaphragm and cantilever PZT microphone sensors for anomaly detection in machines such as turbines or engines

Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

PubMed Central

2014-01-01

In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

Interpreting short and medium exposure etched-track radon measurements to determine whether an action level could be exceeded.

PubMed

Denman, A R; Crockett, R G M; Groves-Kirkby, C J; Phillips, P S

2016-10-01

Radon gas is naturally occurring, and can concentrate in the built environment. It is radioactive and high concentration levels within buildings, including homes, have been shown to increase the risk of lung cancer in the occupants. As a result, several methods have been developed to measure radon. The long-term average radon level determines the risk to occupants, but there is always pressure to complete measurements more quickly, particularly when buying and selling the home. For many years, the three-month exposure using etched-track detectors has been the de facto standard, but a decade ago, Phillips et al. (2003), in a DEFRA funded project, evaluated the use of 1-week and 1-month measurements. They found that the measurement methods were accurate, but the challenge lay in the wide variation in radon levels - with diurnal, seasonal, and other patterns due to climatic factors and room use. In the report on this work, and in subsequent papers, the group proposed methodologies for 1-week, 1-month and 3-month measurements and their interpretation. Other work, however, has suggested that 2-week exposures were preferable to 1-week ones. In practice, the radon remediation industry uses a range of exposure times, and further guidance is required to help interpret these results. This paper reviews the data from this study and a subsequent 4-year study of 4 houses, re-analysing the results and extending them to other exposures, particularly for 2-week and 2-month exposures, and provides comprehensive guidance for the use of etched-track detectors, the value and use of Seasonal Correction Factors (SCFs), the uncertainties in short and medium term exposures and the interpretation of results. Copyright © 2016 Elsevier Ltd. All rights reserved.

Cl 2-based dry etching of the AlGaInN system in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Cho, Hyun; Vartuli, C. B.; Abernathy, C. R.; Donovan, S. M.; Pearton, S. J.; Shul, R. J.; Han, J.

1998-12-01

Cl 2-Based inductively coupled plasmas with low additional d.c. self-biases (-100 V) produce convenient etch rates (500-1500 Å·min -1) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas (Ar, N 2, H 2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl 2 in the discharge for all three mixtures and to have an increase (decrease) in etch rate with source power (pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

SEMICONDUCTOR TECHNOLOGY: Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors

NASA Astrophysics Data System (ADS)

Hui, Qiao; Weida, Hu; Zhenhua, Ye; Xiangyang, Li; Haimei, Gong

2010-03-01

The influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reactive ion etching process. A set of variable-area photomask was specially designed to evaluate the hydrogenation effect. It was found that the current-voltage characteristics were gradually improved when detectors were hydrogenated by different areas. The fitting results of experimental results at reverse bias conditions sustained that the improvement of current-voltage curves was due to the suppression of trap assisted tunneling current and the enhancement of minority lifetime in the depletion region. It was also found that the dominative forward current was gradually converted from a generation-recombination current to a diffusion current with the enlargement of the hydrogenation area, which was infered from the ideality factors by abstraction of forward resistance-voltage curves of different detectors.

Far infrared through millimeter backshort-under-grid arrays

NASA Astrophysics Data System (ADS)

Allen, Christine A.; Abrahams, John; Benford, Dominic J.; Chervenak, James A.; Chuss, David T.; Staguhn, Johannes G.; Miller, Timothy M.; Moseley, S. Harvey; Wollack, Edward J.

2006-06-01

We are developing a large-format, versatile, bolometer array for a wide range of infrared through millimeter astronomical applications. The array design consists of three key components - superconducting transition edge sensor bolometer arrays, quarter-wave reflective backshort grids, and Superconducting Quantum Interference Device (SQUID) multiplexer readouts. The detector array is a filled, square grid of bolometers with superconducting sensors. The backshort arrays are fabricated separately and are positioned in the etch cavities behind the detector grid. The grids have unique three-dimensional interlocking features micromachined into the walls for positioning and mechanical stability. The ultimate goal of the program is to produce large-format arrays with background-limited sensitivity, suitable for a wide range of wavelengths and applications. Large-format (kilopixel) arrays will be directly indium bump bonded to a SQUID multiplexer circuit. We have produced and tested 8×8 arrays of 1 mm detectors to demonstrate proof of concept. 8×16 arrays of 2 mm detectors are being produced for a new Goddard Space Flight Center instrument. We have also produced models of a kilopixel detector grid and dummy multiplexer chip for bump bonding development. We present detector design overview, several unique fabrication highlights, and assembly technologies.

Nuclear Track Detector Characterization via Alpha-Spectrometry for Radioprotection Use

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morelli, D.; Imme, G.; Catalano, R.

2011-12-13

Solid Nuclear Track Detectors (SNTDs), CR-39 type, are usually adopted to monitor radon gas concentrations. In order to characterize the detectors according to track geometrical parameters, detectors were irradiated inside a vacuum chamber by alpha particles at twelve energy values, obtained by different Mylar foils in front of a {sup 241}Am source. The alpha energy values were verified using a Si detector. After the exposure to the alpha particles, the detectors were chemically etched to enlarge the tracks, which were then analyzed by means of a semiautomatic system composed of an optical microscope equipped with a CCD camera connected tomore » a personal computer to store images. A suitable routine analyzed the track parameters: major and minor axis length and mean grey level, allowing us to differentiate tracks according to the incident alpha energy and then to individuate the discrimination factors for radon alpha tracks. The combined use of geometrical and optical parameters allows one to overcome the ambiguity in the alpha energy determination due to the non-monotonicity of each parameter versus energy. After track parameter determination, a calibration procedure was performed by means of a radon chamber. The calibration was verified through an inter-comparing survey.« less

Dosimetry measurements using Timepix in mixed radiation fields induced by heavy ions; comparison with standard dosimetry methods

PubMed Central

Ploc, Ondrej; Kubancak, Jan; Sihver, Lembit; Uchihori, Yukio; Jakubek, Jan; Ambrozova, Iva; Molokanov, Alexander; Pinsky, Lawrence

2014-01-01

Objective of our research was to explore capabilities of Timepix for its use as a single dosemeter and LET spectrometer in mixed radiation fields created by heavy ions. We exposed it to radiation field (i) at heavy ion beams at HIMAC, Chiba, Japan, (ii) in the CERN's high-energy reference field (CERF) facility at Geneva, France/Switzerland, (iii) in the exposure room of the proton therapy laboratory at JINR, Dubna, Russia, and (iv) onboard aircraft. We compared the absolute values of dosimetric quantities obtained with Timepix and with other dosemeters and spectrometers like tissue-equivalent proportional counter (TEPC) Hawk, silicon detector Liulin, and track-etched detectors (TEDs).

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface betweenmore » the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.« less

Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

NASA Technical Reports Server (NTRS)

Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

1975-01-01

Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

PubMed

Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

2017-10-24

Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

Liquid droplet sensing using twisted optical fiber couplers fabricated by hydrofluoric acid flow etching

NASA Astrophysics Data System (ADS)

Son, Gyeongho; Jung, Youngho; Yu, Kyoungsik

2017-04-01

We report a directional-coupler-based refractive index sensor and its cost-effective fabrication method using hydrofluoric acid droplet wet-etching and surface-tension-driven liquid flows. The proposed fiber sensor consists of a pair of twisted tapered optical fibers with low excess losses. The fiber cores in the etched microfiber region are exposed to the surrounding medium for efficient interaction with the guided light. We observe that the etching-based low-loss fiber-optic sensors can measure the water droplet volume by detecting the refractive index changes of the surrounding medium around the etched fiber core region.

Mid infrared MEMS FTIR spectrometer

NASA Astrophysics Data System (ADS)

Erfan, Mazen; Sabry, Yasser M.; Mortada, Bassem; Sharaf, Khaled; Khalil, Diaa

2016-03-01

In this work we report, for the first time to the best of our knowledge, a bulk-micromachined wideband MEMS-based spectrometer covering both the NIR and the MIR ranges and working from 1200 nm to 4800 nm. The core engine of the spectrometer is a scanning Michelson interferometer micro-fabricated using deep reactive ion etching (DRIE) technology. The spectrum is obtained using the Fourier Transform techniques that allows covering a very wide spectral range limited by the detector responsivity. The moving mirror of the interferometer is driven by a relatively large stroke electrostatic comb-drive actuator. Zirconium fluoride (ZrF4) multimode optical fibers are used to connect light between the white light source and the interferometer input, as well as the interferometer output to a PbSe photoconductive detector. The recorded signal-to-noise ratio is 25 dB at the wavelength of 3350 nm. The spectrometer is successfully used in measuring the absorption spectra of methylene chloride, quartz glass and polystyrene film. The presented solution provides a low cost method for producing miniaturized spectrometers in the near-/mid-infrared.

Improving contact layer patterning using SEM contour based etch model

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka; Hertzsch, Tino; Moll, Hans-Peter

2016-10-01

The patterning of the contact layer is modulated by strong etch effects that are highly dependent on the geometry of the contacts. Such litho-etch biases need to be corrected to ensure a good pattern fidelity. But aggressive designs contain complex shapes that can hardly be compensated with etch bias table and are difficult to characterize with standard CD metrology. In this work we propose to implement a model based etch compensation method able to deal with any contact configuration. With the help of SEM contours, it was possible to get reliable 2D measurements particularly helpful to calibrate the etch model. The selections of calibration structures was optimized in combination with model form to achieve an overall errRMS of 3nm allowing the implementation of the model in production.

Effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics.

PubMed

Hooshmand, Tabassom; Parvizi, Shaghayegh; Keshvad, Alireza

2008-07-01

The purpose of this study was to assess the effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics reinforced by leucite or lithium disilicate crystals. Forty glass ceramic disks (14-mm diameter, 2-mm thick) consisting of 20 leucite-based ceramic disks (IPS Empress) and 20 lithia disilicate-based ceramic (IPS Empress 2) were produced by hot-pressing technique. All specimens were polished and then cleaned ultrasonically in distilled water. Ten specimens of each ceramic group were then etched with 9% hydrofluoric (HF) acid gel for 2 minutes and cleaned ultrasonically again. The biaxial flexural strength was measured by the piston-on-three-ball test in a universal testing machine. Data based on ten specimens in each group were analyzed by two-way ANOVA (alpha= 0.05). Microstructure of ceramic surfaces before and after acid etching was also examined by a scanning electron microscope. The mean biaxial flexural strength values for each group tested were (in MPa): nonetched IPS Empress = 118.6 +/- 25.5; etched IPS Empress = 102.9 +/- 15.4; nonetched IPS Empress 2 = 283.0 +/- 48.5; and etched IPS Empress 2 = 250.6 +/- 34.6. The results showed that the etching process reduced the biaxial flexural strengths significantly for both ceramic types (p= 0.025). No significant interaction between the ceramic type and etching process was found (p= 0.407). From the results, it was concluded that surface HF acid etching could have a weakening effect on hot-pressed leucite or lithia disilicate-based glass ceramic systems.

Status of the evidence for a magnetic monopole

NASA Technical Reports Server (NTRS)

Price, P. B.

1975-01-01

The experimental evidence supporting the detection of a moving magnetic monopole, using a balloon-borne array of track detectors, was presented. Although the results cannot be proved to have been produced by a monopole, they do not seem to have been produced by any nucleus. The very high, roughly constant ionization rate inferred from track etch rate measurements in a stack of Lexan detectors implies passage of a minimum-ionizing particle more highly charged than any known nucleus, yet the Cerenkov film detectors indicated a velocity less than about 0.68 times the speed of light and the size of the track in the nuclear emulsion indicated a velocity approximately equal to 0.5 times the speed of light. At this velocity the ionization rate of a highly electrically charged particle would have changed dramatically with pathlength unless its mass to charge ratio were far greater than that of a nucleus.

Effect of different monomer-based composites and acid etching pre-treatment of enamel on the microleakage using self-etch adhesives systems.

PubMed

Catelan, Anderson; Giorgi, Maria Cecília Caldas; Soares, Giulliana Panfiglio; Lima, Debora Alves Nunes Leite; Marchi, Giselle Maria; Aguiar, Flávio Henrique Baggio

2014-11-01

To evaluate quantitatively the marginal microleakage of restorations carried out with self-etching adhesives with or without prior phosphoric enamel acid etching of silorane or methacrylate resin-based composite restorations subjected to thermal cycling. Forty cavities were prepared at the proximal surface of bovine incisors and randomly divided according to the etching of the enamel and restorative system used. The groups were restored with methacrylate [Adper SE Plus adhesive (3M ESPE) + Filtek Z250 (3M ESPE)] or silorane [Filtek LS adhesive (3M ESPE) + Filtek LS composite (3M ESPE)] restorative systems, light-cured using a LED unit (Bluephase 16i, Vivadent). After restorative procedure and thermocycling (1000 cycles), the specimens were immersed in methylene blue for 2 h. The specimens were triturated and the powder was used for analysis in an absorbance spectrophotometer. Data were statistically analyzed by 2-way ANOVA (alpha = 0.05). No statistical difference between the restorative materials tested with or without previous acid etching of enamel in Class II marginal microleakage was observed (p > 0.05). The use of acid etching prior to self-etching adhesives did not interfere on the microleakage of methacrylate- or silorane-based restorations.

A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

NASA Astrophysics Data System (ADS)

Roozeboom, F.; Kniknie, B.; Lankhorst, A. M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.; Dingemans, G.; Keuning, W.; Kessels, W. M. M.

2012-12-01

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatially-divided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing 'curtains' of heights down to ~20 μm. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C4F8 passivation steps by ALD-based oxide (e.g. SiO2) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams.

PubMed

Grad, Michael; Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J

2012-12-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University's Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm - 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H + ), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles ( 4 He ++ ). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms.

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

PubMed Central

Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J.

2013-01-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University’s Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm – 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H+), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles (4He++). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms. PMID:24058378

Design and grayscale fabrication of beamfanners in a silicon substrate

NASA Astrophysics Data System (ADS)

Ellis, Arthur Cecil

2001-11-01

This dissertation addresses important first steps in the development of a grayscale fabrication process for multiple phase diffractive optical elements (DOS's) in silicon. Specifically, this process was developed through the design, fabrication, and testing of 1-2 and 1-4 beamfanner arrays for 5-micron illumination. The 1-2 beamfanner arrays serve as a test-of- concept and basic developmental step toward the construction of the 1-4 beamfanners. The beamfanners are 50 microns wide, and have features with dimensions of between 2 and 10 microns. The Iterative Annular Spectrum Approach (IASA) method, developed by Steve Mellin of UAH, and the Boundary Element Method (BEM) are the design and testing tools used to create the beamfanner profiles and predict their performance. Fabrication of the beamfanners required the techniques of grayscale photolithography and reactive ion etching (RIE). A 2-3micron feature size 1-4 silicon beamfanner array was fabricated, but the small features and contact photolithographic techniques available prevented its construction to specifications. A second and more successful attempt was made in which both 1-4 and 1-2 beamfanner arrays were fabricated with a 5-micron minimum feature size. Photolithography for the UAH array was contracted to MEMS-Optical of Huntsville, Alabama. A repeatability study was performed, using statistical techniques, of 14 photoresist arrays and the subsequent RIE process used to etch the arrays in silicon. The variance in selectivity between the 14 processes was far greater than the variance between the individual etched features within each process. Specifically, the ratio of the variance of the selectivities averaged over each of the 14 etch processes to the variance of individual feature selectivities within the processes yielded a significance level below 0.1% by F-test, indicating that good etch-to-etch process repeatability was not attained. One of the 14 arrays had feature etch-depths close enough to design specifications for optical testing, but 5- micron IR illumination of the 1-4 and 1-2 beamfanners yielded no convincing results of beam splitting in the detector plane 340 microns from the surface of the beamfanner array.

[Influence of thermalcycling on bonding durability of self-etch adhesives with dentin].

PubMed

Tian, Fu-cong; Wang, Xiao-yan; Gao, Xue-jun

2014-04-18

To investigate influence of thermalcycling on the bonding durability of two one-step products [Adper Prompt (AP) and G-bond (GB)] and one two-step self-etching adhesive [Clearfil SE bond (SE)] with dentin in vitro. Forty-two extracted human molars were selected. The superficial dentin was exposed by grinding off the enamel. The teeth were randomly distributed into six groups with varied bonding protocols. The adhesives were applied to the dentin surface. Composite crowns were built up, then the samples were cut longitudinally into sticks with 1.0 mm×1.0 mm bonding area [for microtensile bond strength (MTBS) testing] or 1.0 mm thick slabs (for nanoleakage observation). Bonding performance was evaluated with or without thermalcyling. For the MTBS testing, the strength values were statistically analysed using One-Way ANOVA. Four slabs in each group were observed for nanoleakage by SEM with a backscattered electron detector. Thermalcycling procedures affected MTBS. In the two one-step groups, the MTBS decreased significantly (P<0.05) after thermalcycling [AP group from (19.06±1.50) MPa to (12.62±2.10) MPa; GB group from (17.75±1.10) MPa to (6.24±0.42)MPa]. But in SE groups, MTBS did not significantly affect [(45.80±2.97) MPa compared with(40.60±5.76) MPa]. As a whole, one-step self-etching adhesives showed lower MTBS than two-step bonding system after aging.For AP and GB, continuous nanoleakage appearance was notable and more obvious than for SE. Thermalcycling can affect the bonding performance of self-etch adhesives including decrease of bond strength and nanoleakage pattern. one-step self-etch adhesives showed more obvious change compared with their two-step counterparts.

Measurements of LET distribution and dose equivalent onboard the Space Shuttle IML-2 (STS-65) and S/MM#4 (STS-79).

PubMed

Hayashi, T; Doke, T; Kikuchi, J; Sakaguchi, T; Takeuchi, R; Takashima, T; Kobayashi, M; Terasawa, K; Takahashi, K; Watanabe, A; Kyan, A; Hasebe, N; Kashiwagi, T; Ogura, K; Nagaoka, S; Kato, M; Nakano, T; Takahashi, S; Yamanaka, H; Yamaguchi, K; Badhwar, G D

1997-12-01

Space radiation dosimetry measurements have been made onboard the Space Shuttle STS-65 in the Second International Microgravity Laboratory (IML-2: 28.5 degrees x 300 km: 14.68 days) and the STS-79 in the 4th Shuttle MIR mission (S/MM#4: 51.6 degrees x 300-400km: 10.2 days). In these measurements, three kinds of detectors were used; one is a newly developed active detector telescope called "Real-time Radiation Monitoring Device (RRMD-I for IML-2 and RRMD-II with improved triggering system for S/MM#4)" utilizing silicon semi-conductor detectors and the other detectors are conventional passive detectors of thermoluminescence dosimeters (TLDs) and CR-39 plastic track detectors. The main contribution to dose equivalent for particles with LET > 5.0 keV/micrometer (IML-2) and LET > 3.5 keV/micrometer (S/MM#4) is seen to be due to galactic cosmic rays (GCRs) and the contribution of the South Atlantic Anomaly (SAA) is less than 5% (IML-2: 28.5 degrees x 300 km) and 15% (S/MM#4: 51.6 degrees x 400 km) in the above RRMD LET detection conditions. For the whole LET range (> 0.2 kev/micrometer) obtained by TLDs and CR-39 in these two typical orbits (a small inclination x low altitude and a large inclination x high altitude), absorbed dose rates range from 94 to 114 microGy/day, dose equivalent rates from 186 to 207 microSv/day and average quality factors from 1.82 to 2.00 depending on the locations and directions of detectors inside the Spacelab at the highly protected IML-2 orbit (28.5 degrees x 300 km), and also, absorbed dose rates range from 290 to 367 microGy/day, dose equivalent rates from 582 to 651 microSv/day and average quality factors from 1.78 to 2.01 depending on the dosimeter packages around the RRMD-II "Detector Unit" at the S/MM#4 orbit (5l.6 degrees x 400km). In general, it is seen that absorbed doses depend on the orbit altitude (SAA trapped particles contribution dominant) and dose equivalents on the orbit inclination (GCR contribution dominant). The LET distributions obtained by two different types of active and passive detectors, RRMDs and CR-39, are in good agreement for LET of 15 - 200 kev/micrometer and difference of these distributions in the regions of LET < 15 kev/micrometer and LET > 200 kev/micrometer can be explained by considering characteristics of CR-39 etched track formation especially for the low LET tracks and chemical etching conditions.

Measurements of LET distribution and dose equivalent onboard the Space Shuttle IML-2 (STS-65) and S/MM#4 (STS-79)

NASA Technical Reports Server (NTRS)

Hayashi, T.; Doke, T.; Kikuchi, J.; Sakaguchi, T.; Takeuchi, R.; Takashima, T.; Kobayashi, M.; Terasawa, K.; Takahashi, K.; Watanabe, A.;

High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

NASA Astrophysics Data System (ADS)

Song, Junqiang; Shi, Xun; Chen, Lidong

2014-10-01

Etching characteristics of p-type (BiSb)2Te3 films were studied with CH4/H2/Ar gas mixture using an inductively coupled plasma (ICP)-reactive ion etching (RIE) system. The effects of gas mixing ratio, working pressure and gas flow rate on the etch rate and the surface morphology were investigated. The vertical etched profile with the etch rate of 600 nm/min was achieved at the optimized processing parameters. X-ray photoelectron spectroscopy (XPS) analysis revealed the non-uniform etching of (BiSb)2Te3 films due to disparate volatility of the etching products. Micro-masking effects caused by polymer deposition and Bi-rich residues resulted in roughly etched surfaces. Smooth surfaces can be obtained by optimizing the CH4/H2/Ar mixing ratio.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices

NASA Astrophysics Data System (ADS)

Zhang, Bingxin; An, Xia; Li, Ming; Hao, Peilin; Zhang, Xing; Huang, Ru

2018-04-01

In this paper, nanoscale germanium (Ge) fin etching with inductively coupled plasma equipment with SF6/CHF3/Ar and Cl2/BCl3/Ar gas mixes are experimentally demonstrated. The impact of the gas ratio on etching induced Ge surface flatness, etch rate and sidewall steepness are comprehensively investigated and compared for these two kinds of etchants and the optimized gas ratio is provided. By using silicon oxide as a hard mask, nanoscale Ge fin with a flat surface and sharp sidewall is experimentally illustrated, which indicates great potential for use in nanoscale Ge-based multi-gate MOSFETs.

Nanoscale Quantum Confined Structures with Photon Controlling Cavities

DTIC Science & Technology

2011-07-13

cleanroom using standard techniques of mesa etching, passivation and contact metal deposition. The pixels consisted of top- illuminated 410x410 µm2 mesas ...the fabricated detector. The mesa , top metal, bottom metal and plasmonic metal can be observed. The square pattern at the center is the fabricated...hollow symbols) 400x400m2 mesa device. Approved for public release; distribution is unlimited. 16 control sample. Secondly, since the R.M.S

Heavy Nucleus Collector (HNC) project for the NASA Long Duration Exposure Facility (LDEF)

NASA Technical Reports Server (NTRS)

Tarle, Gregory

1990-01-01

The primary goal of the heavy nucleus collector (HNC) experiment was to obtain high resolution composition measurements for cosmic ray nuclei in the platinum-lead and actinide region of the periodic table. Secondary objectives include studies of selected groups of elements of lower charge. These goals were to be realized by orbiting a large area array of dielectric nuclear track detectors in space for several years. In this time sufficient actinide nuclei would be collected to determine the nucleosynthetic age of the cosmic radiation and the relative mix of r- and s-process elements in the cosmic ray source. The detector consists of approximately 50 trays assembled in pressurized canisters. Each tray would contain 8 half-stacks (4 stacks total) and an event thermometer which would record the temperature of each event at the time of exposure. Each stack would contain 7 layers of Rodyne-P, CR-39 and Cronar plastic track detectors interleaved with copper stripping foils. Upon return to Earth, detectors would be removed for analysis. Ultraheavy nuclei would have left tracks through the detector sheets that would be made visible after etching in a hot sodium hydroxide solution.

Etching and oxidation of InAs in planar inductively coupled plasma

NASA Astrophysics Data System (ADS)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

The MACRO detector at Gran Sasso

NASA Astrophysics Data System (ADS)

Ambrosio, M.; Antolini, R.; Assiro, R.; Auriemma, G.; Bakari, D.; Baldini, A.; Barbarino, G. C.; Barbarito, E.; Barish, B. C.; Battistoni, G.; Becherini, Y.; Bellotti, R.; Bemporad, C.; Bernardini, P.; Bilokon, H.; Bisi, V.; Bloise, C.; Bottazzi, E.; Bower, C.; Brigida, M.; Bussino, S.; Cafagna, F.; Calicchio, M.; Campana, D.; Candela, A.; Carboni, M.; Cecchini, S.; Cei, F.; Ceres, A.; Chiarella, V.; Choudhary, B. C.; Coutu, S.; Cozzi, M.; Creti, P.; de Cataldo, G.; Esposti, L. Degli; Dekhissi, H.; de Marzo, C.; de Mitri, I.; Derkaoui, J.; de Vincenzi, M.; di Credico, A.; di Ferdinando, D.; Diotallevi, R.; Erriquez, O.; Favuzzi, C.; Forti, C.; Fusco, P.; Gebhard, M.; Giacomelli, G.; Giacomelli, R.; Giannini, G.; Giglietto, N.; Giorgini, M.; Giuliani, R.; Goretti, M.; Grassi, M.; Grau, H.; Gray, L.; Grillo, A.; Guarino, F.; Gustavino, C.; Habig, A.; Hanson, J.; Hanson, K.; Hawthorne, A.; Heinz, R.; Hong, J. T.; Iarocci, E.; Katsavounidis, E.; Katsavounidis, I.; Kearns, E.; Kim, H.; Kyriazopoulou, S.; Lamanna, E.; Lane, C.; Leone, A.; Levin, D. S.; Lipari, P.; Liu, G.; Liu, R.; Longley, N. P.; Longo, M. J.; Loparco, F.; Maaroufi, F.; Mancarella, G.; Mandrioli, G.; Manzoor, S.; Marrelli, V.; Margiotta, A.; Marini, A.; Martello, D.; Marzari-Chiesa, A.; Mazziotta, M. N.; Michael, D. G.; Mikheyev, S.; Miller, L.; Monacelli, P.; Mongelli, M.; Montaruli, T.; Monteno, M.; Mossbarger, L.; Mufson, S.; Musser, J.; Nicolò, D.; Nolty, R.; Okada, C.; Orsini, M.; Orth, C.; Osteria, G.; Ouchrif, M.; Palamara, O.; Parlati, S.; Patera, V.; Patrizii, L.; Pazzi, R.; Peck, C. W.; Pellizzoni, G.; Perchiazzi, M.; Perrone, L.; Petrakis, J.; Petrera, S.; Pignatano, N.; Pinto, C.; Pistilli, P.; Popa, V.; Rainò, A.; Reynoldson, J.; Ronga, F.; Rrhioua, A.; Sacchetti, A.; Saggese, P.; Satriano, C.; Satta, L.; Scapparone, E.; Scholberg, K.; Sciubba, A.; Serra, P.; Sioli, M.; Sirri, G.; Sitta, M.; Sondergaard, S.; Spinelli, P.; Spinetti, M.; Spurio, M.; Stalio, S.; Steinberg, R.; Stone, J. L.; Sulak, L. R.; Surdo, A.; Tarlè, G.; Togo, V.; Vakili, M.; Valieri, C.; Walter, C. W.; Webb, R.; Zaccheo, N.; MACRO Collaboration

2002-07-01

MACRO was an experiment that ran in the Laboratori Nazionali del Gran Sasso from 1988 to 2000. Its principal goal was to observe magnetic monopoles or set significantly lower experimental flux limits than had been previously available in the velocity range from about β=10 -4 to unity. In addition it made a variety of other observations. Examples are: setting flux limits on other so far unobserved particles such as nuclearites and lightly ionizing particles, searching for WIMP annihilations in the Earth and the Sun and for neutrino bursts from stellar collapses in or near our Galaxy, and making measurements relevant to high energy muon and neutrino astronomy and of the flux of up-going muons as a function of nadir angle showing evidence for neutrino oscillations. The apparatus consisted of three principal types of detectors: liquid scintillator counters, limited streamer tubes, and nuclear track etch detectors. In addition, over part of its area it contained a transition radiation detector. The general design philosophy emphasized redundancy and complementarity. This paper describes the technical aspects of the complete MACRO detector, its operational performance, and the techniques used to calibrate it and verify its proper operation. It supplements a previously published paper which described the first portion of the detector that was built and operated.

The MACRO detector at Gran Sasso

NASA Astrophysics Data System (ADS)

MACRO Collaboration; Ambrosio, M.; Antolini, R.; Assiro, R.; Auriemma, G.; Bakari, D.; Baldini, A.; Barbarino, G. C.; Barbarito, E.; Barish, B. C.; Battistoni, G.; Becherini, Y.; Bellotti, R.; Bemporad, C.; Bernardini, P.; Bilokon, H.; Bisi, V.; Bloise, C.; Bottazzi, E.; Bower, C.; Brigida, M.; Bussino, S.; Cafagna, F.; Calicchio, M.; Campana, D.; Candela, A.; Carboni, M.; Cecchini, S.; Cei, F.; Ceres, A.; Chiarella, V.; Choudhary, B. C.; Coutu, S.; Cozzi, M.; Creti, P.; de Cataldo, G.; degli Esposti, L.; Dekhissi, H.; de Marzo, C.; de Mitri, I.; Derkaoui, J.; de Vincenzi, M.; di Credico, A.; di Ferdinando, D.; Diotallevi, R.; Erriquez, O.; Favuzzi, C.; Forti, C.; Fusco, P.; Gebhard, M.; Giacomelli, G.; Giacomelli, R.; Giannini, G.; Giglietto, N.; Giorgini, M.; Giuliani, R.; Goretti, M.; Grassi, M.; Grau, H.; Gray, L.; Grillo, A.; Guarino, F.; Gustavino, C.; Habig, A.; Hanson, J.; Hanson, K.; Hawthorne, A.; Heinz, R.; Hong, J. T.; Iarocci, E.; Katsavounidis, E.; Katsavounidis, I.; Kearns, E.; Kim, H.; Kyriazopoulou, S.; Lamanna, E.; Lane, C.; Leone, A.; Levin, D. S.; Lipari, P.; Liu, G.; Liu, R.; Longley, N. P.; Longo, M. J.; Loparco, F.; Maaroufi, F.; Mancarella, G.; Mandrioli, G.; Manzoor, S.; Marrelli, V.; Margiotta, A.; Marini, A.; Martello, D.; Marzari-Chiesa, A.; Mazziotta, M. N.; Michael, D. G.; Mikheyev, S.; Miller, L.; Monacelli, P.; Mongelli, M.; Montaruli, T.; Monteno, M.; Mossbarger, L.; Mufson, S.; Musser, J.; Nicolò, D.; Nolty, R.; Okada, C.; Orsini, M.; Orth, C.; Osteria, G.; Ouchrif, M.; Palamara, O.; Parlati, S.; Patera, V.; Patrizii, L.; Pazzi, R.; Peck, C. W.; Pellizzoni, G.; Perchiazzi, M.; Perrone, L.; Petrakis, J.; Petrera, S.; Pignatano, N.; Pinto, C.; Pistilli, P.; Popa, V.; Rainò, A.; Reynoldson, J.; Ronga, F.; Rrhioua, A.; Sacchetti, A.; Saggese, P.; Satriano, C.; Satta, L.; Scapparone, E.; Scholberg, K.; Sciubba, A.; Serra, P.; Sioli, M.; Sirri, G.; Sitta, M.; Sondergaard, S.; Spinelli, P.; Spinetti, M.; Spurio, M.; Stalio, S.; Steinberg, R.; Stone, J. L.; Sulak, L. R.; Surdo, A.; Tarlè, G.; Togo, V.; Vakili, M.; Valieri, C.; Walter, C. W.; Webb, R.; Zaccheo, N.

2002-07-01

MACRO was an experiment that ran in the Laboratori Nazionali del Gran Sasso from 1988 to 2000. Its principal goal was to observe magnetic monopoles or set significantly lower experimental flux limits than had been previously available in the velocity range from about β=10-4 to unity. In addition it made a variety of other observations. Examples are: setting flux limits on other so far unobserved particles such as nuclearites and lightly ionizing particles, searching for WIMP annihilations in the Earth and the Sun and for neutrino bursts from stellar collapses in or near our Galaxy, and making measurements relevant to high energy muon and neutrino astronomy and of the flux of up-going muons as a function of nadir angle showing evidence for neutrino oscillations. The apparatus consisted of three principal types of detectors: liquid scintillator counters, limited streamer tubes, and nuclear track etch detectors. In addition, over part of its area it contained a transition radiation detector. The general design philosophy emphasized redundancy and complementarity. This paper describes the technical aspects of the complete MACRO detector, its operational performance, and the techniques used to calibrate it and verify its proper operation. It supplements a previously published paper which described the first portion of the detector that was built and operated.

Experimental set up for the irradiation of biological samples and nuclear track detectors with UV C

PubMed Central

Portu, Agustina Mariana; Rossini, Andrés Eugenio; Gadan, Mario Alberto; Bernaola, Omar Alberto; Thorp, Silvia Inés; Curotto, Paula; Pozzi, Emiliano César Cayetano; Cabrini, Rómulo Luis; Martin, Gisela Saint

2016-01-01

Aim In this work we present a methodology to produce an “imprint” of cells cultivated on a polycarbonate detector by exposure of the detector to UV C radiation. Background The distribution and concentration of 10B atoms in tissue samples coming from BNCT (Boron Neutron Capture Therapy) protocols can be determined through the quantification and analysis of the tracks forming its autoradiography image on a nuclear track detector. The location of boron atoms in the cell structure could be known more accurately by the simultaneous observation of the nuclear tracks and the sample image on the detector. Materials and Methods A UV C irradiator was constructed. The irradiance was measured along the lamp direction and at different distances. Melanoma cells were cultured on polycarbonate foils, incubated with borophenylalanine, irradiated with thermal neutrons and exposed to UV C radiation. The samples were chemically attacked with a KOH solution. Results A uniform irradiation field was established to expose the detector foils to UV C light. Cells could be seeded on the polycarbonate surface. Both imprints from cells and nuclear tracks were obtained after chemical etching. Conclusions It is possible to yield cellular imprints in polycarbonate. The nuclear tracks were mostly present inside the cells, indicating a preferential boron uptake. PMID:26933396

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

NASA Astrophysics Data System (ADS)

Li, Kun-Dar; Miao, Jin-Ru

2018-02-01

To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, <100> and <111> preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hübner, M.; Lang, N.; Röpcke, J.

2015-01-19

Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines andmore » determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.« less

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Normal-incidence quantum cascade detector coupled by nanopore structure

NASA Astrophysics Data System (ADS)

Liu, Jianqi; Wang, Fengjiao; Zhai, Shenqiang; Zhang, Jinchuan; Liu, Shuman; Liu, Junqi; Wang, Lijun; Liu, Fengqi; Wang, Zhanguo

2018-04-01

A normal-incidence quantum cascade detector coupled by a nanopore array structure (NPS) is demonstrated. The NPS is fabricated on top of an In0.53Ga0.47As contact layer by inductively coupled plasma etching using anodic aluminum oxide as a mask. Because of the nonuniform volume fraction at different areas of the device mesa, the NPS acts as subwavelength random gratings. Normal-incidence light can be scattered into random oblique directions for inter-sub-band transition absorption. With normal incidence, the responsivities of the device reach 24 mA/W at 77 K and 15.7 mA/W at 300 K, which are enhanced 2.23 and 1.96 times, respectively, compared with that of the 45°-edge device.

An automatic analyzer of solid state nuclear track detectors using an optic RAM as image sensor

NASA Astrophysics Data System (ADS)

Staderini, Enrico Maria; Castellano, Alfredo

1986-02-01

An optic RAM is a conventional digital random access read/write dynamic memory device featuring a quartz windowed package and memory cells regularly ordered on the chip. Such a device is used as an image sensor because each cell retains data stored in it for a time depending on the intensity of the light incident on the cell itself. The authors have developed a system which uses an optic RAM to acquire and digitize images from electrochemically etched CR39 solid state nuclear track detectors (SSNTD) in the track count rate up to 5000 cm -2. On the digital image so obtained, a microprocessor, with appropriate software, performs image analysis, filtering, tracks counting and evaluation.

Optical-fiber strain sensors with asymmetric etched structures.

PubMed

Vaziri, M; Chen, C L

1993-11-01

Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

NASA Astrophysics Data System (ADS)

kumar, Sandeep; Pratiyush, Anamika Singh; Dolmanan, Surani B.; Tripathy, Sudhiranjan; Muralidharan, Rangarajan; Nath, Digbijoy N.

2017-12-01

We demonstrate an InAlN/GaN-on-Si high electron mobility transistor based UV detector with a photo-to-dark current ratio of >107. The Ti/Al/Ni/Au metal stack was evaporated and thermal annealed rapidly for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface, while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. A spectral responsivity (SR) of 32.9 A/W at 367 nm was measured at 5 V. A very high photo-to-dark current ratio of >107 was measured at a bias of 20 V. The photo-to-dark current ratio at a fixed bias was found to be decreasing with an increase in the recess length of photodetectors. The fabricated devices were found to exhibit a UV-to-visible rejection ratio of >103 with a low dark current of < 32 pA at 5 V. Transient measurements showed rise and fall times in the range of 3-4 ms. The gain mechanism was investigated, and carrier lifetimes were estimated which matched well with those reported elsewhere.

Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer

DOEpatents

Manginell, Ronald P.; Schubert, W. Kent; Shul, Randy J.

2005-08-16

New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.

The effect of reactive ion etch (RIE) process conditions on ReRAM device performance

NASA Astrophysics Data System (ADS)

Beckmann, K.; Holt, J.; Olin-Ammentorp, W.; Alamgir, Z.; Van Nostrand, J.; Cady, N. C.

2017-09-01

The recent surge of research on resistive random access memory (ReRAM) devices has resulted in a wealth of different materials and fabrication approaches. In this work, we describe the performance implications of utilizing a reactive ion etch (RIE) based process to fabricate HfO2 based ReRAM devices, versus a more unconventional shadow mask fabrication approach. The work is the result of an effort to increase device yield and reduce individual device size. Our results show that choice of RIE etch gas (SF6 versus CF4) is critical for defining the post-etch device profile (cross-section), and for tuning the removal of metal layers used as bottom electrodes in the ReRAM device stack. We have shown that etch conditions leading to a tapered profile for the device stack cause poor electrical performance, likely due to metal re-deposition during etching, and damage to the switching layer. These devices exhibit nonlinear I-V during the low resistive state, but this could be improved to linear behavior once a near-vertical etch profile was achieved. Device stacks with vertical etch profiles also showed an increase in forming voltage, reduced switching variability and increased endurance.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

PubMed

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

2018-05-29

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

Technique for etching monolayer and multilayer materials

DOEpatents

Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

2015-10-06

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Dual band sensitivity enhancements of a VO(x) microbolometer array using a patterned gold black absorber.

PubMed

Smith, Evan M; Panjwani, Deep; Ginn, James; Warren, Andrew P; Long, Christopher; Figuieredo, Pedro; Smith, Christian; Nath, Janardan; Perlstein, Joshua; Walter, Nick; Hirschmugl, Carol; Peale, Robert E; Shelton, David

2016-03-10

Infrared-absorbing gold black has been selectively patterned onto the active surfaces of a vanadium-oxide-based infrared bolometer array. Patterning by metal lift-off relies on protection of the fragile gold black with an evaporated oxide, which preserves much of gold black's high absorptance. This patterned gold black also survives the dry-etch removal of the sacrificial polyimide used to fabricate the air-bridge bolometers. For our fabricated devices, infrared responsivity is improved 22% in the long-wave IR and 70% in the mid-wave IR by the gold black coating, with no significant change in detector noise, using a 300°C blackbody and 80 Hz chopping rate. The increase in the time constant caused by the additional mass of gold black is ∼15%.

Bolometric Array Detectors for Space-Borne Astronomy

NASA Technical Reports Server (NTRS)

Lange, Andrew E.

2000-01-01

Funding from the NASA Innovative Research Grant was used to develop bolometric detectors. As described in the proposal, silicon nitride micromesh ('spider-web') absorbers had been demonstrated at U.C. Berkeley but not developed to be flight-worthy devices. We proceeded to first fabricate bolometers with Neutron Transmutation Doped (NTD) Ge thermistors that demonstrated high optical coupling (Church et al. 1996) and were developed for a ground-based millimeter-wave receiver (Mauskopf et al. 1997). The next generation of devices used In bump-bonded thermistors to achieve devices with performance product NEP*sqrt(tau) = 3e - 18 j at 300 mK, demonstrating a full order of magnitude improvement over pervious devices. These devices achieved an NEP = 1e-18 W/rtHz (Murray et al. 1996) as promised in the proposal. Sensitivities as good as 1e - 19 W/rtHz appear achievable with the silicon nitride architecture (Bock et al. 1997). Finally, arrays of micromesh bolometers were shown to be feasible in the last year of the program by etching a large number of devices on a single silicon wafer (75 mm). Full arrays were subsequently demonstrated for selection on the ESA/NASA Far-Infrared Space Telescope (FIRST) in competition with detectors provided by CEA in France and GSFC in the US Micromesh bolometer arrays are now baselined for both the ESA/NASA Planck and FIRST missions.

Development and evaluation of magnesium oxide-based ceramics for chamber parts in mass-production plasma etching equipment

NASA Astrophysics Data System (ADS)

Kasashima, Yuji; Tsutsumi, Kota; Mitomi, Shinzo; Uesugi, Fumihiko

2017-06-01

In mass-production plasma etching equipment, the corrosion of ceramic chamber parts reduces the production yield of LSI and overall equipment effectiveness (OEE) owing to contamination, short useful life, and particle generation. Novel ceramics that can improve the production yield and OEE are highly required. We develop magnesium oxide (MgO)-based ceramics and evaluate them under mass-production plasma etching conditions. The results of this study indicate that the developed MgO-based ceramics with high mechanical properties and low electric resistivity have a higher resistance to corrosion in plasma etching using CF4 gas than Si and conventional ceramic materials such as aluminum oxide and yttrium oxide.

Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

NASA Astrophysics Data System (ADS)

Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing

2017-12-01

We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

Optimization and Characterization of a Novel Self Powered Solid State Neutron Detector

NASA Astrophysics Data System (ADS)

Clinton, Justin

There is a strong interest in detecting both the diversion of special nuclear material (SNM) from legitimate, peaceful purposes and the transport of illicit SNM across domestic and international borders and ports. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion layer that converts incident neutrons into detectable charged particles, such as protons, alpha-particles, and heavier ions. Although simple planar devices can act as highly portable, low cost detectors, they have historically been limited to relatively low detection efficiencies; ˜10% and ˜0.2% for thermal and fast detectors, respectively. To increase intrinsic detection efficiency, the incorporation of 3D microstructures into p-i-n silicon devices was proposed. In this research, a combination of existing and new types of detector microstructures were investigated; Monte Carlo models, based on analytical calculations, were constructed and characterized using the GEANT4 simulation toolkit. The simulation output revealed that an array of etched hexagonal holes arranged in a honeycomb pattern and filled with either enriched (99% 10B) boron or parylene resulted in the highest intrinsic detection efficiencies of 48% and 0.88% for thermal and fast neutrons, respectively. The optimal parameters corresponding to each model were utilized as the basis for the fabrication of several prototype detectors. A calibrated 252Cf spontaneous fission source was utilized to generate fast neutrons, while thermal neutrons were created by placing the 252Cf in an HDPE housing designed and optimized using the MCNP simulation software. Upon construction, thermal neutron calibration was performed via activation analysis of gold foils and measurements from a 6Li loaded glass scintillator. Experimental testing of the prototype detectors resulted in maximum intrinsic efficiencies of 4.5 and 0.12% for the thermal and fast devices, respectively. The prototype thermal device was filled with natural (19% 10B) boron; scaling the response to 99% 10B enriched boron resulted in an intrinsic efficiency of 22.5%, one of the highest results in the literature. A comparison of simulated and experimental detector responses demonstrated a high degree of correlation, validating the conceptual models.

The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

NASA Astrophysics Data System (ADS)

Laudrel, E.; Tillocher, T.; Meric, Y.; Lefaucheux, P.; Boutaud, B.; Dussart, R.

2018-05-01

Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2/Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µm · min-1. The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.

High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE

NASA Astrophysics Data System (ADS)

Tran, N. T.; Breivik, Magnus; Patra, S. K.; Fimland, Bjørn-Ove

2014-05-01

GaSb-based semiconductor diode lasers are promising candidates for light sources working in the mid-infrared wavelength region of 2-5 μm. Using edge emitting lasers with ridge-waveguide structure, light emission with good beam quality can be achieved. Fabrication of the ridge waveguide requires precise etch stop control for optimal laser performance. Simulation results are presented that show the effect of increased confinement in the waveguide when the etch depth is well-defined. In situ reflectance monitoring with a 675 nm-wavelength laser was used to determine the etch stop with high accuracy. Based on the simulations of laser reflectance from a proposed sample, the etching process can be controlled to provide an endpoint depth precision within +/- 10 nm.

Characteristics of n-GaN after ICP etching

NASA Astrophysics Data System (ADS)

Han, Yanjun; Xue, Song; Guo, Wenping; Hao, Zhi-Biao; Sun, Changzheng; Luo, Yi

2002-09-01

In this work, a systematic study on the plasma-induced damage on n-type GaN by inductively coupled plasma (ICP) etching is presented. After n-contact metal formation and annealing, electrical property is evaluated by the I-V characteristics. Room temperature photoluminescence (PL) measurement of etched GaN surfaces is performed to investigate the etching damage on the optical properties of n-type GaN. Investigation of the effect of additive gas RF chuck power on these characteristics has also been carried out. The better etching conditions have been obtained based on these results.

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

NASA Astrophysics Data System (ADS)

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

2015-03-01

Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

NASA Astrophysics Data System (ADS)

Sohrabi, Mehdi

2017-11-01

A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors.

PubMed

Sohrabi, Mehdi

2017-11-01

A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

The acid-base resistant zone in three dentin bonding systems.

PubMed

Inoue, Go; Nikaido, Toru; Foxton, Richard M; Tagami, Junji

2009-11-01

An acid-base resistant zone has been found to exist after acid-base challenge adjacent to the hybrid layer using SEM. The aim of this study was to examine the acid-base resistant zone using three different bonding systems. Dentin disks were applied with three different bonding systems, and then a resin composite was light-cured to make dentin disk sandwiches. After acid-base challenge, the polished surfaces were observed using SEM. For both one- and two-step self-etching primer systems, an acid-base resistant zone was clearly observed adjacent to the hybrid layer - but with differing appearances. For the wet bonding system, the presence of an acid-base resistant zone was unclear. This was because the self-etching primer systems etched the dentin surface mildly, such that the remaining mineral phase of dentin and the bonding agent yielded clear acid-base resistant zones. In conclusion, the acid-base resistant zone was clearly observed when self-etching primer systems were used, but not so for the wet bonding system.

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask

PubMed Central

2014-01-01

A new fabrication method is proposed to produce nanostructures on monocrystalline silicon based on the friction-induced selective etching of its Si3N4 mask. With low-pressure chemical vapor deposition (LPCVD) Si3N4 film as etching mask on Si(100) surface, the fabrication can be realized by nanoscratching on the Si3N4 mask and post-etching in hydrofluoric acid (HF) and potassium hydroxide (KOH) solution in sequence. Scanning Auger nanoprobe analysis indicated that the HF solution could selectively etch the scratched Si3N4 mask and then provide the gap for post-etching of silicon substrate in KOH solution. Experimental results suggested that the fabrication depth increased with the increase of the scratching load or KOH etching period. Because of the excellent masking ability of the Si3N4 film, the maximum fabrication depth of nanostructure on silicon can reach several microns. Compared to the traditional friction-induced selective etching technique, the present method can fabricate structures with lesser damage and deeper depths. Since the proposed method has been demonstrated to be a less destructive and flexible way to fabricate a large-area texture structure, it will provide new opportunities for Si-based nanofabrication. PMID:24940174

ScAlN etch mask for highly selective silicon etching

DOE PAGES

Henry, Michael David; Young, Travis R.; Griffin, Ben

2017-09-08

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

A search for fast moving magnetic monopoles with the MACRO detector

NASA Astrophysics Data System (ADS)

Liu, Rongzhi

From Dirac monopole theory to modern GUT's (Grand Unified Theories), magnetic monopoles have attracted much attention from physicists. While Dirac had demonstrated the consistency of magnetic monopoles with quantum eletrodynamics, 't Hooft and Polyakov demonstrated the necessity of monopoles in GUT's. Furthermore, the GUT's supply more clues about magnetic monopoles, including their exceptionally heavy masses ~10[superscript 16] GeV. Both current theories and previous monopole experiments have suggested that the flux of magnetic monopoles is likely to be very small, so it is necessary to have a large area detector to search for them. This thesis presents a search for fast moving magnetic monopoles with the MACRO detector.The MACRO detector is a large underground detector located at Gran Sasso, Italy. Its primary goal is to search for magnetic monopoles at a flux level beyond the Parker bound. It is underground at 3,000 meters water equivalent depth, with a nominal acceptance of 10,000 m[superscript 2] sr. It employs liquid scintillator counters, streamer tubes and track-etch detectors which can supply both independent and cross checks for fast monopole candidate events.This search is mainly based on the liquid scintillator counters with primary event selection and energy reconstruction from the ERP system. The 6.2 [mu]s trigger time is based on the time of flight of a fast moving monopole diagonally through one supermodule with a velocity ~10[superscript -2]c. The search uses the "six-month-run" data which were taken from December of 1992 to July of 1993 with the operation of the lower part of the detector. With energy reconstruction ability up to 8 GeV with 22% error, we apply a double-face high energy requirement to reject most muon events from the data sample. We then apply the WFD, streamer tube and strip information to reject non-monopole events.The live time for this analysis is 5,300 hours, with acceptance of 4050 m[superscript 2]sr. With no fast monopole candidate event found, we establish an upper flux limit for the fast moving magnetic monopole at 90% confidence level of 3.03 x 10[superscript -15] cm[superscript -2]sr[superscript -1]s[superscript -1] for velocities from 10[superscript -2]c to 1.0c.

A Search for Fast Moving Magnetic Monopoles with the MACRO Detector

NASA Astrophysics Data System (ADS)

Liu, Rongzhi

1995-01-01

From Dirac monopole theory to modern GUT's (Grand Unified Theories), magnetic monopoles have attracted much attention from physicists. While Dirac had demonstrated the consistency of magnetic monopoles with quantum eletrodynamics, 't Hooft and Polyakov demonstrated the necessity of monopoles in GUT's. Furthermore, the GUT's supply more clues about magnetic monopoles, including their exceptionally heavy masses ~ 10^{16 } GeV. Both current theories and previous monopole experiments have suggested that the flux of magnetic monopoles is likely to be very small, so it is necessary to have a large area detector to search for them. This thesis presents a search for fast moving magnetic monopoles with the MACRO detector. The MACRO detector is a large underground detector located at Gran Sasso, Italy. Its primary goal is to search for magnetic monopoles at a flux level beyond the Parker bound. It is underground at 3,000 meters water equivalent depth, with a nominal acceptance of 10,000 m^2 sr. It employs liquid scintillator counters, streamer tubes and track-etch detectors which can supply both independent and cross checks for fast monopole candidate events. This search is mainly based on the liquid scintillator counters with primary event selection and energy reconstruction from the ERP system. The 6.2 mus trigger time is based on the time of flight of a fast moving monopole diagonally through one supermodule with a velocity ~ 10^{-2}c. The search uses the "six-month-run" data which were taken from December of 1992 to July of 1993 with the operation of the lower part of the detector. With energy reconstruction ability up to 8 GeV with 22% error, we apply a double-face high energy requirement to reject most muon events from the data sample. We then apply the WFD, streamer tube and strip information to reject non-monopole events. The live time for this analysis is 5,300 hours, with acceptance of 4050 m^2 sr. With no fast monopole candidate event found, we establish an upper flux limit for the fast moving magnetic monopole at 90% confidence level of 3.03 times 10^{-15} cm^ {-2}sr^{-1}s ^{-1} for velocities from 10^{-2}c to 1.0c.

Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

2016-08-01

Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

Resistance of dichromated gelatin as photoresist

NASA Astrophysics Data System (ADS)

Lin, Pang; Yan, Yingbai; Jin, Guofan; Wu, Minxian

1999-09-01

Based on the photographic chemistry, chemically hardening method was selected to enhance the anti-etch capability of gelatin. With the consideration of hardener and permeating processing, formaldehyde is the most ideal option due to the smallest molecule size and covalent cross-link with gelatin. After hardened in formaldehyde, the resistance of the gelatin was obtained by etched in 1% HF solution. The result showed that anti-etch capability of the gelatin layer increased with tanning time, but the increasing rate reduced gradually and tended to saturation. Based on the experimental results, dissolving-flaking hypothesis for chemically hardening gelatin was presented. Sol-gel coatings were etched with 1% HF solution. Compared with the etching rate of gelatin layer, it showed that gelatin could be used as resist to fabricate optical elements in sol-gel coating. With the cleaving-etch method and hardening of dichromated gelatin (DCG), DCG was used as a photoresist for fabricating sol-gel optical elements. As an application, a sol-gel random phase plate was fabricated.

Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

NASA Astrophysics Data System (ADS)

Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

2015-12-01

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

Material and detector properties of cadmium manganese telluride (Cd 1-xMn xTe) crystals grown by the modified floating-zone method

DOE PAGES

Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; ...

2014-12-24

We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd 1-xMn xTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd 1-xMn xTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are freemore » from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

GaN MOSFET with Boron Trichloride-Based Dry Recess Process

NASA Astrophysics Data System (ADS)

Jiang, Y.; Wang, Q. P.; Tamai, K.; Miyashita, T.; Motoyama, S.; Wang, D. J.; Ao, J. P.; Ohno, Y.

2013-06-01

The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl3) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl4) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl3 based dry recess achieved a high maximum electron mobility of 141.5 cm2V-1s-1 and a low interface state density.

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abernathy, C.R.; Hobson, W.S.; Hong, J.

1998-11-04

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunctionmore » bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.« less

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-01-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Czech results at criticality dosimetry intercomparison 2002.

PubMed

Frantisek, Spurný; Jaroslav, Trousil

2004-01-01

Two criticality dosimetry systems were tested by Czech participants during the intercomparison held in Valduc, France, June 2002. The first consisted of the thermoluminescent detectors (TLDs) (Al-P glasses) and Si-diodes as passive neutron dosemeters. Second, it was studied to what extent the individual dosemeters used in the Czech routine personal dosimetry service can give a reliable estimation of criticality accident exposure. It was found that the first system furnishes quite reliable estimation of accidental doses. For routine individual dosimetry system, no important problems were encountered in the case of photon dosemeters (TLDs, film badge). For etched track detectors in contact with the 232Th or 235U-Al alloy, the track density saturation for the spark counting method limits the upper dose at approximately 1 Gy for neutrons with the energy >1 MeV.

Etude fondamentale des mecanismes de gravure par plasma de materiaux de pointe: Application a la fabrication de dispositifs photoniques

NASA Astrophysics Data System (ADS)

Stafford, Luc

Advances in electronics and photonics critically depend upon plasma-based materials processing either for transferring small lithographic patterns into underlying materials (plasma etching) or for the growth of high-quality films. This thesis deals with the etching mechanisms of materials using high-density plasmas. The general objective of this work is to provide an original framework for the plasma-material interaction involved in the etching of advanced materials by putting the emphasis on complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. Based on a synthesis of the descriptions proposed by different authors to explain the etching characteristics of simple materials in noble and halogenated plasma mixtures, we propose comprehensive rate models for physical and chemical plasma etching processes. These models have been successfully validated using experimental data published in literature for Si, Pt, W, SiO2 and ZnO. As an example, we have been able to adequately describe the simultaneous dependence of the etch rate on ion and reactive neutral fluxes and on the ion energy. From an exhaustive experimental investigation of the plasma and etching properties, we have also demonstrated that the validity of the proposed models can be extended to complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. We also reported for the first time physical aspects involved in plasma etching such as the influence of the film microstructural properties on the sputter-etch rate and the influence of the positive ion composition on the ion-assisted desorption dynamics. Finally, we have used our deep investigation of the etching mechanisms of STO films and the resulting excellent control of the etch rate to fabricate a ridge waveguide for photonic device applications. Keywords: plasma etching, sputtering, adsorption and desorption dynamics, high-density plasmas, plasma diagnostics, advanced materials, photonic applications.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Microfabricated Cantilevers Based on Sputtered Thin-Film Ni50Ti50 Shape Memory Alloy (SMA)

DTIC Science & Technology

2015-08-01

surface coating developed during the NiTi deposition or anneal that is relatively resistant to the wet etch. Fig. 2 SEMs after the NiTi wet -etch...SEMs of NiTi devices after the 600 °C anneal , wet -etch patterning of the NiTi. A 120-nm Au capping layer was also sputtered. Figure 3a shows a 200-nm...Ni50Ti50 Cantilever 2 3. Results and Discussion 3 3.1 Wet -Etch Patterning NiTi 3 3.2 Dry-Etch Release of NiTi Devices 5 3.3 Thermal Actuation of

Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO2 plasma etching

NASA Astrophysics Data System (ADS)

Chapman, Glenn H.; Tu, Yuqiang; Peng, Jun

2004-01-01

Bi/In thermal resist is a bilayer structure of Bi over In films which can be exposed by laser with a wide range of wavelengths and can be developed by diluted RCA2 solutions. Current research shows bimetallic resist can work as etch masking layer for both dry plasma etching and wet anisotropic etching. It can act as both patterning and masking layers for Si and SiO2 with plasma "dry" etch using CF4/CHF3. The etching condition is CF4 flow rate 50 sccm, pressure 150 mTorr, and RF power 100 - 600W. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1 nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In. Bi/In also creates etch masking layers for alkaline-based (KOH, TMAH and EDP) "wet" anisotropic bulk Si etch without the need of SiO2 masking steps. The laser exposed Bi/In etches two times more slowly than SiO2. Experiment result shows that single metal Indium film exhibits thermal resist characteristics but at twice the exposure levels. It can be developed in diluted RCA2 solution and used as an etch mask layer for Si anisotropic etch. X-ray diffraction analysis shows that laser exposure causes both Bi and In single film to oxidize. In film may become amorphous when exposed to high laser power.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

Modification of the Surface Topography and Composition of Ultrafine and Coarse Grained Titanium by Chemical Etching.

PubMed

Nazarov, Denis V; Zemtsova, Elena G; Solokhin, Alexandr Yu; Valiev, Ruslan Z; Smirnov, Vladimir M

2017-01-13

In this study, we present the detailed investigation of the influence of the etching medium (acidic or basic Piranha solutions) and the etching time on the morphology and surface relief of ultrafine grained (UFG) and coarse grained (CG) titanium. The surface relief and morphology have been studied by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and the spectral ellipsometry. The composition of the samples has been determined by X-ray fluorescence analysis (XRF) and X-ray Photoelectron Spectroscopy (XPS). Significant difference in the etching behavior of UFG and CG titanium has been found. UFG titanium exhibits higher etching activity independently of the etching medium. Formed structures possess higher homogeneity. The variation of the etching medium and time leads to micro-, nano-, or hierarchical micro/nanostructures on the surface. Significant difference has been found between surface composition for UFG titanium etched in basic and acidic Piranha solution. Based on the experimental data, the possible reasons and mechanisms are considered for the formation of nano- and microstructures. The prospects of etched UFG titanium as the material for implants are discussed.

Modification of the Surface Topography and Composition of Ultrafine and Coarse Grained Titanium by Chemical Etching

PubMed Central

Nazarov, Denis V.; Zemtsova, Elena G.; Solokhin, Alexandr Yu.; Valiev, Ruslan Z.; Smirnov, Vladimir M.

2017-01-01

In this study, we present the detailed investigation of the influence of the etching medium (acidic or basic Piranha solutions) and the etching time on the morphology and surface relief of ultrafine grained (UFG) and coarse grained (CG) titanium. The surface relief and morphology have been studied by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and the spectral ellipsometry. The composition of the samples has been determined by X-ray fluorescence analysis (XRF) and X-ray Photoelectron Spectroscopy (XPS). Significant difference in the etching behavior of UFG and CG titanium has been found. UFG titanium exhibits higher etching activity independently of the etching medium. Formed structures possess higher homogeneity. The variation of the etching medium and time leads to micro-, nano-, or hierarchical micro/nanostructures on the surface. Significant difference has been found between surface composition for UFG titanium etched in basic and acidic Piranha solution. Based on the experimental data, the possible reasons and mechanisms are considered for the formation of nano- and microstructures. The prospects of etched UFG titanium as the material for implants are discussed. PMID:28336849

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis R.; Griffin, Ben

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Inorganic Bi/In thermal resist as a high-etch-ratio patterning layer for CF4/CHF3/O2 plasma etch

NASA Astrophysics Data System (ADS)

Tu, Yuqiang; Chapman, Glenn H.; Peng, Jun

2004-05-01

Bimetallic thin films containing indium and with low eutectic points, such as Bi/In, have been found to form highly sensitive thermal resists. They can be exposed by lasers with a wide range of wavelengths and be developed by diluted RCA2 solutions. The exposed bimetallic resist Bi/In can work as an etch masking layer for alkaline-based (KOH, TMAH and EDP) "wet" Si anisotropic etching. Current research shows that it can also act as a patterning and masking layer for Si and SiO2 plasma "dry" etch using CF4/CHF3. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In, indicating that laser exposure is an oxidation process. Experiment result shows that single metal Indium film and bilayer Sn/In exhibit thermal resist characteristics but at higher exposure levels. They can be developed in diluted RCA2 solution and used as etch mask layers for Si anisotropic etch and plasma etch.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

A Nipkow disk integrated with Fresnel lenses for terahertz single pixel imaging.

PubMed

Li, Chong; Grant, James; Wang, Jue; Cumming, David R S

2013-10-21

We present a novel Nipkow disk design for terahertz (THz) single pixel imaging applications. A 100 mm high resistivity (ρ≈3k-10k Ω·cm) silicon wafer was used for the disk on which a spiral array of twelve 16-level binary Fresnel lenses were fabricated using photolithography and a dry-etch process. The implementation of Fresnel lenses on the Nipkow disk increases the THz signal transmission compared to the conventional pinhole-based Nipkow disk by more than 12 times thus a THz source with lower power or a THz detector with lower detectivity can be used. Due to the focusing capability of the lenses, a pixel resolution better than 0.5 mm is in principle achievable. To demonstrate the concept, a single pixel imaging system operating at 2.52 THz is described.

Nanoparticle-based etching of silicon surfaces

DOEpatents

Branz, Howard [Boulder, CO; Duda, Anna [Denver, CO; Ginley, David S [Evergreen, CO; Yost, Vernon [Littleton, CO; Meier, Daniel [Atlanta, GA; Ward, James S [Golden, CO

2011-12-13

A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Weiye; Sridhar, Shyam; Liu, Lei

2014-05-28

Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) andmore » Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.« less

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching.

PubMed

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-12-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Method of plasma etching Ga-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2012-12-25

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

NASA Astrophysics Data System (ADS)

Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

2018-05-01

A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

Fabrication of a novel quartz micromachined gyroscope

NASA Astrophysics Data System (ADS)

Xie, Liqiang; Xing, Jianchun; Wang, Haoxu; Wu, Xuezhong

2015-04-01

A novel quartz micromachined gyroscope is proposed in this paper. The novel gyroscope is realized by quartz anisotropic wet etching and 3-dimensional electrodes deposition. In the quartz wet etching process, the quality of Cr/Au mask films affecting the process are studied by experiment. An excellent mask film with 100 Å Cr and 2000 Å Au is achieved by optimization of experimental parameters. Crystal facets after etching seriously affect the following sidewall electrodes deposition process and the structure's mechanical behaviours. Removal of crystal facets is successfully implemented by increasing etching time based on etching rate ratios between facets and crystal planes. In the electrodes deposition process, an aperture mask evaporation method is employed to prepare electrodes on 3-dimensional surfaces of the gyroscope structure. The alignments among the aperture masks are realized by the ABM™ Mask Aligner System. Based on the processes described above, a z-axis quartz gyroscope is fabricated successfully.

Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching

NASA Astrophysics Data System (ADS)

Lin, Wen-kui; Zeng, Chun-hong; Sun, Yu-hua; Zhang, Xuan; Li, Zhe; Yang, Tao-tao; Ju, Tao; Zhang, Bao-shun

2018-02-01

Additional scattering of electrons in the complex MOSFET channel caused by off-cut angle of (0001) 4H-SiC wafer, makes accurate crystal face acquisition much desired. Molten KOH was used to etch the circular grooves on the SiC wafer surface in muffle furnace, and hexagonal grooves with SiC crystal symmetry were obtained. Average etching rates at 500°C along <11-20> and <1-100> direction were about 4.826 um/min and 4.112 um/min, respectively,with a etching anisotropy ratio of 1.18. The m face was obtained by controlling the etching time and Si face was obtained by selfstopping effect. The method we developed in this paper has potential applications in the accurate crystal face acquisition of (0001) 4H-SiC epi-wafer, and the preparation of structures based on 4H-SiC.

In situ CF3 Detection in Low Pressure Inductive Discharges by Fourier Transform Infrared Spectroscopy

NASA Technical Reports Server (NTRS)

Kim, J. S.; Cappelli, M. A.; Sharma, S. P.; Arnold, J. O. (Technical Monitor)

1998-01-01

The detection of CF(x) (x=1-3) radicals in low pressure discharges using source gases such as CF4 and CHF3 is of importance to the understanding of their chemical structure and relevance in plasma based etching processes. These radicals are known to contribute to the formation of fluorocarbon polymer films, which affect the selectivity and anisotropy of etching. In this study, we present preliminary results of the quantitative measurement of trifluoromethyl radicals, CF3, in low pressure discharges. The discharge studied here is an inductively (transformer) coupled plasma (ICP) source in the GEC reference cell, operating on pure CF4 at pressures ranging from 10 - 100 mTorr, This plasma source generates higher electron number densities at lower operating pressures than obtainable with the parallel-plate capacitively coupled version of the GEC reference cell. Also, this expanded operating regime is more relevant to new generations of industrial plasma reactors being used by the microelectronics industry. Fourier transform infrared (FTIR) spectroscopy is employed to observe the absorption band of CF3 radicals in the electronic ground state X2Al in the region of 1233-1270/cm. The spectrometer is equipped with a high sensitivity HgCdTe (MCT) detector and has a fixed resolution of 0.125/cm. The CF3 concentrations are measured for a range of operating pressures and discharge power levels.

Formation and metrology of dual scale nano-morphology on SF(6) plasma etched silicon surfaces.

PubMed

Boulousis, G; Constantoudis, V; Kokkoris, G; Gogolides, E

2008-06-25

Surface roughness and nano-morphology in SF(6) plasma etched silicon substrates are investigated in a helicon type plasma reactor as a function of etching time and process parameters. The plasma etched surfaces are analyzed by atomic force microscopy. It is found that dual scale nano-roughness is formatted on the silicon surface comprising an underlying nano-roughness and superimposed nano-mounds. Detailed metrological quantification is proposed for the characterization of dual scale surface morphology. As etching proceeds, the mounds become higher, fewer and wider, and the underlying nano-roughness also increases. Increase in wafer temperature leads to smoother surfaces with lower, fewer and wider nano-mounds. A mechanism based on the deposition of etch inhibiting particles during the etching process is proposed for the explanation of the experimental behavior. In addition, appropriately designed experiments are conducted, and they confirm the presence of this mechanism.

Mesoporous carbon-supported Pd nanoparticles with high specific surface area for cyclohexene hydrogenation: Outstanding catalytic activity of NaOH-treated catalysts

NASA Astrophysics Data System (ADS)

Puskás, R.; Varga, T.; Grósz, A.; Sápi, A.; Oszkó, A.; Kukovecz, Á.; Kónya, Z.

2016-06-01

Extremely high specific surface area mesoporous carbon-supported Pd nanoparticle catalysts were prepared with both impregnation and polyol-based sol methods. The silica template used for the synthesis of mesoporous carbon was removed by both NaOH and HF etching. Pd/mesoporous carbon catalysts synthesized with the impregnation method has as high specific surface area as 2250 m2/g. In case of NaOH-etched impregnated samples, the turnover frequency of cyclohexene hydrogenation to cyclohexane at 313 K was obtained 14 molecules • site- 1 • s- 1. The specific surface area of HF-etched samples was higher compared to NaOH-etched samples. However, catalytic activity was 3-6 times higher on NaOH-etched samples compared to HF-etched samples, which can be attributed to the presence of sodium and surface hydroxylgroups of the catalysts etched with NaOH solution.

SEMICONDUCTOR TECHNOLOGY Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant

NASA Astrophysics Data System (ADS)

Weiying, Ou; Yao, Zhang; Hailing, Li; Lei, Zhao; Chunlan, Zhou; Hongwei, Diao; Min, Liu; Weiming, Lu; Jun, Zhang; Wenjing, Wang

2010-10-01

Etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without the addition of surfactant. Experiments were carried out in different TMAH concentrations at different temperatures for different etching times. The surface phenomena, etching rates, surface morphology and surface reflectance were analyzed. Experimental results show that the resulting surface covered with uniform pyramids can be realized with a small change in etching rates during the etching process. The etching mechanism is explained based on the experimental results and the theoretical considerations. It is suggested that all the components in the TMAH solutions play important roles in the etching process. Moreover, TMA+ ions may increase the wettability of the textured surface. A good textured surface can be obtained in conditions where the absorption of OH-/H2O is in equilibrium with that of TMA+/SiO2 (OH)22-.

CR-39 track detector calibration for H, He, and C ions from 0.1-0.5 MeV up to 5 MeV for laser-induced nuclear fusion product identification.

PubMed

Baccou, C; Yahia, V; Depierreux, S; Neuville, C; Goyon, C; Consoli, F; De Angelis, R; Ducret, J E; Boutoux, G; Rafelski, J; Labaune, C

2015-08-01

Laser-accelerated ion beams can be used in many applications and, especially, to initiate nuclear reactions out of thermal equilibrium. We have experimentally studied aneutronic fusion reactions induced by protons accelerated by the Target Normal Sheath Acceleration mechanism, colliding with a boron target. Such experiments require a rigorous method to identify the reaction products (alpha particles) collected in detectors among a few other ion species such as protons or carbon ions, for example. CR-39 track detectors are widely used because they are mostly sensitive to ions and their efficiency is near 100%. We present a complete calibration of CR-39 track detector for protons, alpha particles, and carbon ions. We give measurements of their track diameters for energy ranging from hundreds of keV to a few MeV and for etching times between 1 and 8 h. We used these results to identify alpha particles in our experiments on proton-boron fusion reactions initiated by laser-accelerated protons. We show that their number clearly increases when the boron fuel is preformed in a plasma state.

Enhancement of phonon backscattering due to confinement of ballistic phonon pathways in silicon as studied with a microfabricated phonon spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Otelaja, O. O.; Robinson, R. D., E-mail: rdr82@cornell.edu

2015-10-26

In this work, the mechanism for enhanced phonon backscattering in silicon is investigated. An understanding of phonon propagation through substrates has implications for engineering heat flow at the nanoscale, for understanding sources of decoherence in quantum systems, and for realizing efficient phonon-mediated particle detectors. In these systems, phonons that backscatter from the bottom of substrates, within the crystal or from interfaces, often contribute to the overall detector signal. We utilize a microscale phonon spectrometer, comprising superconducting tunnel junction emitters and detectors, to specifically probe phonon backscattering in silicon substrates (∼500 μm thick). By etching phonon “enhancers” or deep trenches (∼90 μm) aroundmore » the detectors, we show that the backscattered signal level increases by a factor of ∼2 for two enhancers versus one enhancer. Using a geometric analysis of the phonon pathways, we show that the mechanism of the backscattered phonon enhancement is due to confinement of the ballistic phonon pathways and increased scattering off the enhancer walls. Our result is applicable to the geometric design and patterning of substrates that are employed in phonon-mediated detection devices.« less

Directional Etching of Silicon by Silver Nanostructures

NASA Astrophysics Data System (ADS)

Sharma, Pradeep; Wang, Yuh-Lin

2011-02-01

We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

Dose distribution of secondary radiation in a water phantom for a proton pencil beam-EURADOS WG9 intercomparison exercise.

PubMed

Stolarczyk, L; Trinkl, S; Romero-Expósito, M; Mojżeszek, N; Ambrozova, I; Domingo, C; Davídková, M; Farah, J; Kłodowska, M; Knežević, Ž; Liszka, M; Majer, M; Miljanić, S; Ploc, O; Schwarz, M; Harrison, R M; Olko, P

2018-04-19

Systematic 3D mapping of out-of-field doses induced by a therapeutic proton pencil scanning beam in a 300  ×  300  ×  600 mm 3 water phantom was performed using a set of thermoluminescence detectors (TLDs): MTS-7 ( 7 LiF:Mg,Ti), MTS-6 ( 6 LiF:Mg,Ti), MTS-N ( nat LiF:Mg,Ti) and TLD-700 ( 7 LiF:Mg,Ti), radiophotoluminescent (RPL) detectors GD-352M and GD-302M, and polyallyldiglycol carbonate (PADC)-based (C 12 H 18 O 7 ) track-etched detectors. Neutron and gamma-ray doses, as well as linear energy transfer distributions, were experimentally determined at 200 points within the phantom. In parallel, the Geant4 Monte Carlo code was applied to calculate neutron and gamma radiation spectra at the position of each detector. For the cubic proton target volume of 100  ×  100  ×  100 mm 3 (spread out Bragg peak with a modulation of 100 mm) the scattered photon doses along the main axis of the phantom perpendicular to the primary beam were approximately 0.5 mGy Gy -1 at a distance of 100 mm and 0.02 mGy Gy -1 at 300 mm from the center of the target. For the neutrons, the corresponding values of dose equivalent were found to be ~0.7 and ~0.06 mSv Gy -1 , respectively. The measured neutron doses were comparable with the out-of-field neutron doses from a similar experiment with 20 MV x-rays, whereas photon doses for the scanning proton beam were up to three orders of magnitude lower.

Dose distribution of secondary radiation in a water phantom for a proton pencil beam—EURADOS WG9 intercomparison exercise

NASA Astrophysics Data System (ADS)

Stolarczyk, L.; Trinkl, S.; Romero-Expósito, M.; Mojżeszek, N.; Ambrozova, I.; Domingo, C.; Davídková, M.; Farah, J.; Kłodowska, M.; Knežević, Ž.; Liszka, M.; Majer, M.; Miljanić, S.; Ploc, O.; Schwarz, M.; Harrison, R. M.; Olko, P.

2018-04-01

Systematic 3D mapping of out-of-field doses induced by a therapeutic proton pencil scanning beam in a 300  ×  300  ×  600 mm3 water phantom was performed using a set of thermoluminescence detectors (TLDs): MTS-7 (7LiF:Mg,Ti), MTS-6 (6LiF:Mg,Ti), MTS-N (natLiF:Mg,Ti) and TLD-700 (7LiF:Mg,Ti), radiophotoluminescent (RPL) detectors GD-352M and GD-302M, and polyallyldiglycol carbonate (PADC)-based (C12H18O7) track-etched detectors. Neutron and gamma-ray doses, as well as linear energy transfer distributions, were experimentally determined at 200 points within the phantom. In parallel, the Geant4 Monte Carlo code was applied to calculate neutron and gamma radiation spectra at the position of each detector. For the cubic proton target volume of 100  ×  100  ×  100 mm3 (spread out Bragg peak with a modulation of 100 mm) the scattered photon doses along the main axis of the phantom perpendicular to the primary beam were approximately 0.5 mGy Gy‑1 at a distance of 100 mm and 0.02 mGy Gy‑1 at 300 mm from the center of the target. For the neutrons, the corresponding values of dose equivalent were found to be ~0.7 and ~0.06 mSv Gy‑1, respectively. The measured neutron doses were comparable with the out-of-field neutron doses from a similar experiment with 20 MV x-rays, whereas photon doses for the scanning proton beam were up to three orders of magnitude lower.

Exposure of population from residential radon: a case study for district Hattian, Azad Kashmir, Sub-Himalayas, Pakistan.

PubMed

Rafique, M; Rahman, S U; Matiullah

2012-11-01

Indoor air quality has acquired considerable importance in recent years. Tighter buildings with poorer ventilation systems have led towards higher levels of indoor air pollution. Radon is considered to be most significant perilous gas among the various air contaminants found in the residential environment. To determine the risk posed by residential radon exposure, a survey was carried out in the Hattian district of the state of Azad Jammu and Kashmir, Pakistan. In this context, 160 houses were carefully selected for the installation of CR-39-based National Radiological Protection Board-type detectors installation. After exposing the CR-39 detectors for a period of 90 d, they were etched in 6 M chemical solution of sodium hydroxide at a temperature of 80°C for a period of 16 h. The detectors were read under an optical microscope and observed track densities were converted into the indoor radon concentration using a calibration factor of 2.7 tracks cm(-2) h(-1) per kBqm(-3). For the current study, observed radon concentrations ranged from 35 to 175 Bqm(-3), whereas the mean annual effective radon doses received by the inhabitants of the area ranged from 0.88 ± 0.12 to 4.41 ± 0.20 mSv with an average value of 2.62 ± 0.12 mSv. These reported values are less than the limits (standards) recommended by the different world organisations.

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection.

PubMed

Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

2017-05-22

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10 -5 A cm -2 . The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection

NASA Astrophysics Data System (ADS)

Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

2017-07-01

The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Caries-preventive effect of fissure sealant containing surface reaction-type pre-reacted glass ionomer filler and bonded by self-etching primer.

PubMed

Shimazu, Kisaki; Ogata, Kiyokazu; Karibe, Hiroyuki

2012-01-01

We aimed to evaluate the caries-preventive effect of a fissure sealant containing surface reaction-type pre-reacted glass ionomer (S-PRG) filler and bonded by self-etching primer versus those of 2 conventional resin-based sealants bonded by acid etching in terms of its impact on enamel demineralization and remineralization, enamel bond strength, and integrity of debonded enamel surfaces. Demineralization, remineralization, and bond strength on untreated enamel and enamel subsurface lesions of bovine incisors were assessed among the sealants by polarizing microscopy and microradiography; debonded enamel surfaces were examined by scanning electron microscopy. The conventional resin-based sealants bonded by acid etching caused surface defects on the enamel subsurface lesions and significantly increased the lesion depth (p = 0.014), indicative of enamel demineralization. However the S-PRG filler-containing sealant bonded by self-etching primer maintained the enamel surface integrity and inhibited enamel demineralization. No difference in bond strength on both untreated enamel and enamel subsurface lesions was noted among the sealants. An S-PRG filler-containing fissure sealant bonded by self-etching primer can prevent enamel demineralization, microleakage, and gaps without the tags created by acid etching regardless of the enamel condition. Such sealants are suitable for protecting the pits and fissures of immature permanent teeth.

Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; He, Jim; Choi, Jinhan; Collins, Ken

2011-10-01

Plasma etching for microelectronics fabrication is facing extreme challenges as processes are developed for advanced technological nodes. As device sizes shrink, control of shallow trench isolation (STI) features become more important in both logic and memory devices. Halogen-based inductively coupled plasmas in a pressure range of 20-60 mTorr are typically used to etch STI features. The need for improved performance and shorter development cycles are placing greater emphasis on understanding the underlying mechanisms to meet process specifications. In this work, a surface mechanism for STI etch process will be discussed that couples a fundamental plasma model to experimental etch process measurements. This model utilizes ion/neutral fluxes and energy distributions calculated using the Hybrid Plasma Equipment Model. Experiments are for blanket Si wafers in a Cl2/HBr/O2/N2 plasma over a range of pressures, bias powers, and flow rates of feedstock gases. We found that kinetic treatment of electron transport was critical to achieve good agreement with experiments. The calibrated plasma model is then coupled to a string-based feature scale model to quantify the effect of varying process parameters on the etch profile. We found that the operating parameters strongly influence critical dimensions but have only a subtle impact on the etch depths.

Design and Fabrication Highlights Enabling a 2 mm, 128 Element Bolometer Array for GISMO

NASA Technical Reports Server (NTRS)

Allen, Christine; Benford, Dominic; Miller, Timothy; Staguhn, Johannes; Wollack, Edward; Moseley, Harvey

2007-01-01

The Backshort-Under-Grid (BUG) superconducting bolometer array architecture is intended to be highly versatile, operating in a large range of wavelengths and background conditions. We have undertaken a three-year program to develop key technologies and processes required to build kilopixel arrays. To validate the basic array design and to demonstrate its applicability for future kilopixel arrays, we have chosen to demonstrate a 128 element bolometer array optimized for 2 mm wavelength using a newly built Goddard instrument, GISMO (Goddard /RAM Superconducting 2-millimeter Observer). The arrays are fabricated using batch wafer processing developed and optimized for high pixel yield, low noise, and high uniformity. The molybdenum-gold superconducting transition edge sensors are fabricated using batch sputter deposition and are patterned using dry etch techniques developed at Goddard. With a detector pitch of 2 mm 8x16 array for GISMO occupies nearly one half of the processing area of a 100 mm silicon-on-insulator starting wafer. Two such arrays are produced from a single wafer along with witness samples for process characterization. To provide thermal isolation for the detector elements, at the end of the process over 90% of the silicon must be removed using deep reactive ion etching techniques. The electrical connections for each bolometer element are patterned on the top edge of the square grid supporting the array. The design considerations unique to GISMO, key fabrication challenges, and laboratory experimental results will be presented.

Anisotropic etching of silicon in solutions containing tensioactive compounds

NASA Astrophysics Data System (ADS)

Zubel, Irena

2016-12-01

The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

PubMed

Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

2016-04-10

HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm^-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance.

Influence of application method on surface free-energy and bond strength of universal adhesive systems to enamel.

PubMed

Imai, Arisa; Takamizawa, Toshiki; Sai, Keiichi; Tsujimoto, Akimasa; Nojiri, Kie; Endo, Hajime; Barkmeier, Wayne W; Latta, Mark A; Miyazaki, Masashi

2017-10-01

The aim of the present study was to determine the influence of different adhesive application methods and etching modes on enamel bond effectiveness of universal adhesives using shear bond strength (SBS) testing and surface free-energy (SFE) measurements. The adhesives Scotchbond Universal, All-Bond Universal, Adhese Universal, and G-Premio Bond were used. Prepared bovine enamel specimens were divided into four groups, based on type of adhesive, and subjected to the following surface treatments: (i) total-etch mode with active application; (ii) total-etch mode with inactive application; (iii) self-etch mode with active application; and (iv) self-etch mode with inactive application. Bonded specimens were subjected to SBS testing. The SFE of the enamel surfaces with adhesive was measured after rinsing with acetone and water. The SBS values in total-etch mode were significantly higher than those in self-etch mode. In total-etch mode, significantly lower SBS values were observed with active application compared with inactive application; in contrast, in self-etch mode there were no significant differences in SBS between active and inactive applications. A reduction in total SFE was observed for active application compared with inactive application. The interaction between etching mode and application method was statistically significant, and the application method significantly affected enamel bond strength in total-etch mode. © 2017 Eur J Oral Sci.

Nuclear tracks in CR-39 produced by carbon, oxygen, aluminium and titanium ions.

PubMed

Rickards, J; Romo, V; Golzarri, J I; Espinosa, G

2002-01-01

This work describes the response of CR-39 (allyl diglycol polycarbonate) to different ions (C, O, Al and Ti) produced by the Instituto de Fisica 3 MV 9SDH-2 Pelletron accelerator and backscattered from a thin Au film on a C support. The ion energies were chosen in series such that the ranges of the different ions in the detector were 2, 3, 4, 5, 6, 7 and 8 microm respectively for each series. Once exposed, the detectors were etched with a solution of 6.25 M KOH at 60 degrees C, and the reading was carried out using a digital image analysis system. An analysis of the measured track diameters of all the types of ions indicates that, for a given range, track kinetics are independent of type of ion, energy and stopping power.

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Research of mesa type extended wavelength 64x64 In0.83Ga0.17As detector

NASA Astrophysics Data System (ADS)

Deng, Shuangyan; Li, Ping; Li, Tao; Li, Xue; Shao, Xiumei; Tang, Hengjing; Gong, Haimei

2015-10-01

InxGa1-xAs ternary compound is suitable for detection in the shortwave infrared (1-3μm) band. The alloy In0.53Ga0.47As is lattice-matched to InP substrate and has a wavelength response between 0.9μm to 1.7μm at room temperature. The increase of indium composition can extend the wavelength response to longer infrared wave. With the Indium content 0.83, the cutoff wavelength can be extended to 2.6μm. In this paper, we reported the performance of 64x64 pixels mesa-type back-illuminated extended wavelength InGaAs detector arrays. The mesa type detectors were fabricated by ICP etching, side-wall and surface passivation by ICPCVD (inductively coupled plasma chemical vapor deposition) based on the MBE-grown p-i-n In0.83Al0.17As/In0.83Ga0.17As/InxAl1-xAs/InP epitaxial materials. The I-V characteristics and electro-optical performances of these detectors at different temperatures were measured, and the properties such as dark current, response spectra, responsivity, detectivity were analyzed. The results indicate that the dark current of In0.83Ga0.17As photodiodes decreases with decreasing temperature, varying from 4×10-4A/cm2 at 290K to 1.7×10-8A/cm2 at 180K. The spectral response showed slightly blue shift while the detectors were cooling down, and the cut-off wavelength is 2.57μm at room temperature and 2.43μm at 200K, respectively. The dark current density is 115nA/cm2 at 200K and -10mV bias voltage. The peak detectivity is 6.08E11cmHz1/2W-1.

Silicon Micromachined Microlens Array for THz Antennas

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity.

Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

NASA Astrophysics Data System (ADS)

Ben Rabha, M.; Hajji, M.; Belhadj Mohamed, S.; Hajjaji, A.; Gaidi, M.; Ezzaouia, H.; Bessais, B.

2012-02-01

In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400-1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

Microtensile bond strength of three simplified adhesive systems to caries-affected dentin.

PubMed

Scholtanus, J D; Purwanta, Kenny; Dogan, Nilgun; Kleverlaan, Cees J; Feilzer, Albert J

2010-08-01

The purpose of the study was to determine the microtensile bond strength of three different simplified adhesive systems to caries-affected dentin. Fifteen extracted human molars with primary carious lesions were ground flat until dentin was exposed. Soft caries-infected dentin was excavated with the help of caries detector dye. On the remaining hard dentin, a standardized smear layer was created by polishing with 600-grit SiC paper. Teeth were divided into three groups and treated with one of the three tested adhesives: Adper Scotchbond 1 XT (3M ESPE), a 2-step etch-andrinse adhesive, Clearfil S3 Bond (Kuraray), a 1-step self-etching or all-in-one adhesive, and Clearfil SE Bond (Kuraray), a 2-step self-etching adhesive. Five-mm-thick composite buildups (Z-250, 3M ESPE) were built and light cured. After water storage for 24 h at 37ºC, the bonded specimens were sectioned into bars (1.0 x 1.0 mm; n = 20 to 30). Microtensile bond strength of normal dentin specimens and caries-affected dentin specimens was measured in a universal testing machine (crosshead speed = 1 mm/min). Data were analyzed using two-way ANOVA and Tukey's post-hoc test (p < 0.05). No significant differences in bond strength values to normal dentin between the three adhesives were found. Adper Scotchbond 1 XT and Clearfil S3 Bond showed significantly lower bond strength values to caries-affected dentin. For Clearfil SE Bond, bond strength values to normal and caries-affected dentin were not significantly different. All the tested simplified adhesives showed similar bond strength values to normal dentin. For the tested 2-step etch-and-rinse adhesive and the all-in-one adhesive, the bond strength values to caries-affected dentin were lower than to normal dentin.

Wafer edge overlay control solution for N7 and beyond

NASA Astrophysics Data System (ADS)

van Haren, Richard; Calado, Victor; van Dijk, Leon; Hermans, Jan; Kumar, Kaushik; Yamashita, Fumiko

2018-03-01

Historically, the on-product overlay performance close to the wafer edge is lagging with respect to the inner part of the wafer. The reason for this is that wafer processing is less controlled close to the wafer edge as opposed to the rest of the wafer. It is generally accepted that Chemical Vapor Deposition (CVD) of stressed layers that cause wafer warp, wafer table contamination, Chemical Mechanical Polishing (CMP), and Reactive Ion Etch (RIE) may deteriorate the overlay performance and/or registration close to the wafer edge. For the N7 technology node and beyond, it is anticipated that the tight on-product overlay specification is required across the full wafer which includes the edge region. In this work, we highlight one contributor that may negatively impact the on-product overlay performance, namely the etch step. The focus will be mainly on the wafer edge region but the remaining part of the wafer is considered as well. Three use-cases are examined: multiple Litho-Etch steps (LEn), contact hole layer etch, and the copper dual damascene etch. We characterize the etch contribution by considering the overlay measurement after resist development inspect (ADI) and after etch inspect (AEI). We show that the Yieldstar diffraction based overlay (μDBO) measurements can be utilized to characterize the etch contribution to the overlay budget. The effects of target asymmetry as well as overlay shifts are considered and compared with SEM measurements. Based on the results above, we propose a control solution aiming to reduce or even eliminate the delta between ADI and AEI. By doing so, target/mark to device offsets due to etch might be avoided.

RIE-based Pattern Transfer Using Nanoparticle Arrays as Etch Masks

NASA Astrophysics Data System (ADS)

Hogg, Chip; Majetich, Sara A.; Bain, James A.

2009-03-01

Nanomasking is used to transfer the pattern of a self-assembled array of nanoparticles into an underlying thin film, for potential use as bit-patterned media. We have used this process to investigate the limits of pattern transfer, as a function of gap size in the pattern. Reactive Ion Etching (RIE) is our chosen process, since the gaseous reaction products and high chemical selectivity are ideal features for etching very small gaps. Interstitial surfactant is removed with an O2 plasma, allowing the etchants to penetrate between the particles. Their pattern is transferred into an intermediate SiO2 mask using a CH4-based RIE. This patterned SiO2 layer is finally used as a mask for the MeOH-based RIE which patterns the magnetic film. We present cross-sectional TEM characterization of the etch profiles, as well as magnetic characterization of the film before and after patterning.

Method of plasma etching GA-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2013-01-01

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

The effect of various adhesives, enamel etching, and base treatment on the failure frequency of customized lingual brackets: a randomized clinical trial.

PubMed

Mavreas, Dimitrios; Cuzin, Jean-François; Boonen, Guillaume; Vande Vannet, Bart

2018-05-25

The aim of this paper was to compare failure differences in precious metal customized lingual brackets bonded with three adhesive systems. Also, differences in failure of non-precious metal brackets with and without a silicatized base layer bonded with the same adhesive, as well as the influence of enamel etching prior to using a self-etching dual cure resin were explored. Five different groups were defined in a semi-randomized approach. Group 1 (IME): Maxcem Elite with 378 Incognito brackets and etched teeth, Group 2 (IMNE): Maxcem Elite with 193 Incognito brackets on non-etched teeth, Group 3 (INE): Nexus+Excite with 385 Incognito brackets, Group 4 (IRE): Relyx with 162 Incognito brackets, Group 5 (HRME) and Group 6 (HNRME): Maxcem Elite with 182 Harmony brackets with silicatized and non-slicatized bases respectively. Bracket failures were recorded over a 12-month period. The number of failures during the observation period was small in the various adhesives types of groups, as well as in HRME and HNRME groups, and the comparisons among those groups were non-significant (P > 0.05). A statistically significant difference (P < 0.05) was found between the IME and IMNE groups. 1. During the first year of treatment customized lingual brackets failure frequencies (rates) are not different for the three adhesive materials tested. 2. Eliminating the etching stage when using self-etch/self-adhesive adhesives, may lead to a dramatic increase in the failure rates. 3. Silicoating of stainless steel customized lingual brackets does not seem to influence the failure of the bonds.

Understanding and controlling the step bunching instability in aqueous silicon etching

NASA Astrophysics Data System (ADS)

Bao, Hailing

Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110) substrate. Combining data from these etched patterns and surface IR spectra, a modified mechanism, which explained most experimental observations, was proposed. Control of the step-bunching instability was accomplished with a second micromachined etch barrier pattern which consisted of a circular array of seventy-two long, narrow trenches in an etch mask. Using this pattern, well aligned, regularly shaped, evenly-distributed, near-atomically flat terraces in micron size were produced controllably.

Reflection spectra of etched FBGs under the influence of axial contraction and stress-induced index change.

PubMed

Yang, Hang-Zhou; Lim, Kok-Sing; Qiao, Xue-Guang; Chong, Wu-Yi; Cheong, Yew-Ken; Lim, Weng-Hong; Lim, Wei-Sin; Ahmad, Harith

2013-06-17

We present a new theoretical model for the broadband reflection spectra of etched FBGs which includes the effects of axial contraction and stress-induced index change. The reflection spectra of the etched FBGs with several different taper profiles are simulated based on the proposed model. In our observation, decaying exponential profile produces a broadband reflection spectrum with good uniformity over the range of 1540-1560 nm. An etched FBG with similar taper profile is fabricated and the experimental result shows good agreement with the theoretical model.

Dry etch challenges for CD shrinkage in memory process

NASA Astrophysics Data System (ADS)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma

NASA Astrophysics Data System (ADS)

Ham, Yong-Hyun; Efremov, Alexander; Min, Nam-Ki; Lee, Hyun Woo; Yun, Sun Jin; Kwon, Kwang-Ho

2009-08-01

A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux.

Method to fabricate functionalized conical nanopores

DOEpatents

Small, Leo J.; Spoerke, Erik David; Wheeler, David R.

2016-07-12

A pressure-based chemical etch method is used to shape polymer nanopores into cones. By varying the pressure, the pore tip diameter can be controlled, while the pore base diameter is largely unaffected. The method provides an easy, low-cost approach for conically etching high density nanopores.

Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane

2015-09-15

Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven.more » Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.« less

SHI induced nano track polymer filters and characterization

NASA Astrophysics Data System (ADS)

Vijay, Y. K.

2009-07-01

Swift heavy ion irradiation produces damage in polymers in the form of latent tracks. Latent tracks can be enlarged by etching it in a suitable etchant and thus nuclear track etch membrane can be formed for gas permeation / purification in particular for hydrogen where the molecular size is very small. By applying suitable and controlled etching conditions well defined tracks can be formed for specific applications of the membranes. After etching gas permeation method is used for characterizing the tracks. In the present work polycarbonate (PC) of various thickness were irradiated with energetic ion beam at Inter University Accelerator Centre (IUAC), New Delhi. Nuclear tracks were modified by etching the PC in 6N NaOH at 60 (±1) °C from both sides for different times to produce track etch membranes. At critical etch time the etched pits from both the sides meet a rapid increase in gas permeation was observed. Permeability of hydrogen and carbon dioxide has been measured in samples etched for different times. The latent tracks produced by SHI irradiation in the track etch membranes show enhancement of free volume of the polymer. Nano filters are separation devices for the mixture of gases, different ions in the solution and isotopes and isobars separations. The polymer thin films with controlled porosity finding it self as best choice. However, the permeability and selectivity of these polymer based membrane filters are very important at the nano scale separation. The Swift Heavy Ion (SHI) induced nuclear track etched polymeric films with controlled etching have been attempted and characterized as nano scale filters.

Low Energy X-Ray and γ-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

NASA Astrophysics Data System (ADS)

Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. Russell

2013-08-01

Schottky barrier diode (SBD) radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers and evaluated for low energy x- and γ-rays detection. The detectors were found to be highly sensitive to soft x-rays in the 50 eV to few keV range and showed 2.1 % energy resolution for 59.6 keV gamma rays. The response to soft x-rays for these detectors was significantly higher than that of commercial off-the-shelf (COTS) SiC UV photodiodes. The devices have been characterized by current-voltage (I-V) measurements in the 94-700 K range, thermally stimulated current (TSC) spectroscopy, x-ray diffraction (XRD) rocking curve measurements, and defect delineating chemical etching. I-V characteristics of the detectors at 500 K showed low leakage current ( nA at 200 V) revealing a possibility of high temperature operation. The XRD rocking curve measurements revealed high quality of the epitaxial layer exhibiting a full width at half maximum (FWHM) of the rocking curve 3.6 arc sec. TSC studies in a wide range of temperature (94-550 K) revealed presence of relatively shallow levels ( 0.25 eV) in the epi bulk with a density 7×1013 cm-3 related to Al and B impurities and deeper levels located near the metal-semiconductor interface.

LHCb VELO upgrade

NASA Astrophysics Data System (ADS)

Hennessy, Karol; LHCb VELO Upgrade Collaboration

2017-02-01

The upgrade of the LHCb experiment, scheduled for LHC Run-III, scheduled to start in 2021, will transform the experiment to a trigger-less system reading out the full detector at 40 MHz event rate. All data reduction algorithms will be executed in a high-level software farm enabling the detector to run at luminosities of 2×1033 cm-2 s-1. The Vertex Locator (VELO) is the silicon vertex detector surrounding the interaction region. The current detector will be replaced with a hybrid pixel system equipped with electronics capable of reading out at 40 MHz. The upgraded VELO will provide fast pattern recognition and track reconstruction to the software trigger. The silicon pixel sensors have 55×55 μm2 pitch, and are read out by the VeloPix ASIC, from the Timepix/Medipix family. The hottest region will have pixel hit rates of 900 Mhits/s yielding a total data rate of more than 3 Tbit/s for the upgraded VELO. The detector modules are located in a separate vacuum, separated from the beam vacuum by a thin custom made foil. The foil will be manufactured through milling and possibly thinned further by chemical etching. The material budget will be minimised by the use of evaporative CO2 coolant circulating in microchannels within 400 μm thick silicon substrates. The current status of the VELO upgrade is described and latest results from operation of irradiated sensor assemblies are presented.

Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

PubMed

Chiu, Yi; Pan, Jiun-Hung

2007-05-14

The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

Status of the KLOE-2 Inner Tracker

NASA Astrophysics Data System (ADS)

De Lucia, Erika

2018-01-01

KLOE-2 at the DAΦNE Φ-factory is the main experiment of the INFN Laboratori Nazionali di Frascati (LNF) and is the first high-energy experiment using the GEM technology with a cylindrical geometry, a novel idea developed at LNF. Four concentric cylindrical triple-GEM detectors compose the Inner Tracker, inserted around the interaction region and before the inner wall of the pre-existing KLOE Drift Chamber to improve the resolution on decay vertices close to the interaction point. State-of-the-art solutions have been expressly developed or tuned for this project: single-mask GEM etching, multi-layer XV patterned readout, PEEK spacer grid, GASTONE front-end board, a custom 64-channel ASIC with digital output, and the Global Interface Board for data collection, with a configurable FPGA architecture and Gigabit Ethernet. Alignment and calibration of a cylindrical GEM detector was never done before and represents one of the challenging activities of the experiment. The Inner Tracker detector construction, operation, calibration and performance obtained with cosmic-ray muons and Bhabha scattering events will be reported.

Performance limiting processes in room temperature thallium bromide radiation detectors

NASA Astrophysics Data System (ADS)

Datta, Amlan; Becla, Piotr; Moed, Demi; Motakef, Shariar

2015-09-01

Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. However, several critical issues are needed to be addressed before deployment of this material for long-term field applications. In this paper, the relevance and, scientific and technological progress made towards solving these challenges for TlBr have been discussed. The possible research pathways to mitigate the concerns related to this material have been analyzed and clearly established. Findings from novel experiments performed at CapeSym have revealed that the most significant factors for achieving long-term performance stability for TlBr devices involve physical and chemical conditions of the surface, residual stress, and choice of metal contacts. Palladium electrodes on TlBr devices resulted in a 20-fold improvement in the device lifetime when compared to its Br-etched Pt counterpart. Electron and hole contributions towards the spectroscopic response of the TlBr detector significantly depend on the interaction position of the incoming radiation and was clearly observed in this study. TlBr device fabrication techniques need significant improvement in order to attain reliable, repeatable, and stable, long-term performance.

Simultaneous fluorescence and quantitative phase microscopy with single-pixel detectors

NASA Astrophysics Data System (ADS)

Liu, Yang; Suo, Jinli; Zhang, Yuanlong; Dai, Qionghai

2018-02-01

Multimodal microscopy offers high flexibilities for biomedical observation and diagnosis. Conventional multimodal approaches either use multiple cameras or a single camera spatially multiplexing different modes. The former needs expertise demanding alignment and the latter suffers from limited spatial resolution. Here, we report an alignment-free full-resolution simultaneous fluorescence and quantitative phase imaging approach using single-pixel detectors. By combining reference-free interferometry with single-pixel detection, we encode the phase and fluorescence of the sample in two detection arms at the same time. Then we employ structured illumination and the correlated measurements between the sample and the illuminations for reconstruction. The recovered fluorescence and phase images are inherently aligned thanks to single-pixel detection. To validate the proposed method, we built a proof-of-concept setup for first imaging the phase of etched glass with the depth of a few hundred nanometers and then imaging the fluorescence and phase of the quantum dot drop. This method holds great potential for multispectral fluorescence microscopy with additional single-pixel detectors or a spectrometer. Besides, this cost-efficient multimodal system might find broad applications in biomedical science and neuroscience.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

NASA Astrophysics Data System (ADS)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

2017-02-01

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.

Development and management of a radon assessment strategy suitable for underground railway tunnelling projects.

PubMed

Purnell, C J; Frommer, G; Chan, K; Auch, A A

2004-01-01

The construction of underground tunnels through radon-bearing rock poses a radiation health risk to tunnelling workers from exposure to radon gas and its radioactive decay products. This paper presents the development and practical application of a radon assessment strategy suitable for the measurement of radon in tunnelling work environments in Hong Kong. The assessment strategy was successfully evaluated on a number of underground railway tunnelling projects over a 3 y period. Radon measurements were undertaken using a combination of portable radon measurement equipment and track etch detectors (TEDs) deployed throughout the tunnels. The radon gas monitoring results were used to confirm that ventilation rates were adequate or identified, at an early stage, when further action to reduce radon levels was required. Exposure dose estimates based on the TED results showed that the exposure of tunnel workers to radon did not exceed 3 mSv per annum for the duration of each project.

Array Technology for Terahertz Imaging

NASA Technical Reports Server (NTRS)

Reck, Theodore; Siles, Jose; Jung, Cecile; Gill, John; Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, Imran; Cooper, Ken

2012-01-01

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

Fabrication of polymer microlenses on single mode optical fibers for light coupling

NASA Astrophysics Data System (ADS)

Zaboub, Monsef; Guessoum, Assia; Demagh, Nacer-Eddine; Guermat, Abdelhak

2016-05-01

In this paper, we present a technique for producing fibers optics micro-collimators composed of polydimethylsiloxane PDMS microlenses of different radii of curvature. The waist and working distance values obtained enable the optimization of optical coupling between optical fibers, fibers and optical sources, and fibers and detectors. The principal is based on the injection of polydimethylsiloxane (PDMS) into a conical micro-cavity chemically etched at the end of optical fibers. A spherical microlens is then formed that is self-centered with respect to the axis of the fiber. Typically, an optimal radius of curvature of 10.08 μm is obtained. This optimized micro-collimator is characterized by a working distance of 19.27 μm and a waist equal to 2.28 μm for an SMF 9/125 μm fiber. The simulation and experimental results reveal an optical coupling efficiency that can reach a value of 99.75%.

Method for forming suspended micromechanical structures

DOEpatents

Fleming, James G.

2000-01-01

A micromachining method is disclosed for forming a suspended micromechanical structure from {111} crystalline silicon. The micromachining method is based on the use of anisotropic dry etching to define lateral features of the structure which are etched down into a {111}-silicon substrate to a first etch depth, thereby forming sidewalls of the structure. The sidewalls are then coated with a protection layer, and the substrate is dry etched to a second etch depth to define a spacing of the structure from the substrate. A selective anisotropic wet etchant (e.g. KOH, EDP, TMAH, NaOH or CsOH) is used to laterally undercut the structure between the first and second etch depths, thereby forming a substantially planar lower surface of the structure along a {111} crystal plane that is parallel to an upper surface of the structure. The lateral extent of undercutting by the wet etchant is controlled and effectively terminated by either timing the etching, by the location of angled {111}-silicon planes or by the locations of preformed etch-stops. This present method allows the formation of suspended micromechanical structures having large vertical dimensions and large masses while allowing for detailed lateral features which can be provided by dry etch definition. Additionally, the method of the present invention is compatible with the formation of electronic circuitry on the substrate.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

NASA Astrophysics Data System (ADS)

Farrell, Robert M.; Haeger, Daniel A.; Hsu, Po Shan; Hardy, Matthew T.; Kelchner, Kathryn M.; Fujito, Kenji; Feezell, Daniel F.; Mishra, Umesh K.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

2011-09-01

We present a new method of improving the accuracy and reproducibility of dry etching processes for ridge waveguide InGaN/GaN laser diodes (LDs). A GaN:Al0.09Ga0.91N etch rate selectivity of 11:1 was demonstrated for an m-plane LD with a 40 nm p-Al0.09Ga0.91N etch stop layer (ESL) surrounded by Al-free cladding layers, establishing the effectiveness of AlGaN-based ESLs for controlling etch depth in ridge waveguide InGaN/GaN LDs. These results demonstrate the potential for integrating AlGaN ESLs into commercial device designs where accurate control of the etch depth of the ridge waveguide is necessary for stable, kink-free operation at high output powers.

Microfluidic etching and oxime-based tailoring of biodegradable polyketoesters.

PubMed

Barrett, Devin G; Lamb, Brian M; Yousaf, Muhammad N

2008-09-02

A straightforward, flexible, and inexpensive method to etch biodegradable poly(1,2,6-hexanetriol alpha-ketoglutarate) films is reported. Microfluidic delivery of the etchant, a solution of NaOH, can create micron-scale channels through local hydrolysis of the polyester film. In addition, the presence of a ketone in the repeat unit allows for prior or post chemoselective modifications, enabling the design of functionalized microchannels. Delivery of oxyamine tethered ligands react with ketone groups on the polyketoester to generate covalent oxime linkages. By thermally sealing an etched film to a second flat surface, poly(1,2,6-hexanetriol alpha-ketoglutarate) can be used to create biodegradable microfluidic devices. In order to determine the versatility of the microfluidic etch technique, poly(epsilon-caprolactone) was etched with acetone. This strategy provides a facile method for the direct patterning of biodegradable materials, both through etching and chemoselective ligand immobilization.

Uncladded sensing fiber for refractive index measurement

NASA Astrophysics Data System (ADS)

Bhardwaj, V.; Gangwar, R. K.; Pathak, A. K.; Singh, V. K.

2016-05-01

The formation of chemically etched optical fiber for use in refractive index sensor is addressed. This presented design of a refractive index (RI) sensor is based on recording the power loss exhibited by radiation propagating through an etched multimode fiber (MMF) immersed in the liquid under study. The decreasing diameters of fibers are found to be strongly dependent on the temperature and etchant composition. This experiment was performed for different unclad etched fibers for same sensing length and the RI changes from 1.33 RIU to 1.38 RIU. When the multimode fiber (MMF) is etched for 12 hours the sensitivity of the sensor is approximately 204.25dBm/RIU, which is larger than without etched fiber having sensitivity 127.2dBm/RIU.

Wide angle near-field optical probes by reverse tube etching.

PubMed

Patanè, S; Cefalì, E; Arena, A; Gucciardi, P G; Allegrini, M

2006-04-01

We present a simple modification of the tube etching process for the fabrication of fiber probes for near-field optical microscopy. It increases the taper angle of the probe by a factor of two. The novelty is that the fiber is immersed in hydrofluoric acid and chemically etched in an upside-down geometry. The tip formation occurs inside the micrometer tube cavity formed by the polymeric jacket. By applying this approach, called reverse tube etching, to multimode fibers with 200/250 microm core/cladding diameter, we have fabricated tapered regions featuring high surface smoothness and average cone angles of approximately 30 degrees . A simple model based on the crucial role of the gravity in removing the etching products, explains the tip formation process.

Effect of helium ion beam treatment on wet etching of silicon dioxide

NASA Astrophysics Data System (ADS)

Petrov, Yu. V.; Grigoryev, E. A.; Sharov, T. V.; Baraban, A. P.

2018-03-01

We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 1014 cm-2 to 1017 cm-2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

NASA Astrophysics Data System (ADS)

Yeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I.

2015-08-01

In this paper, based on the anisotropic nature of hydrogen (H2) etching on GaN, we describe a new approach to the removal of threading dislocations in GaN layers. The top surfaces of c-plane (Ga-face) and a-plane GaNs are considered stable in H2; therefore, H2 etches only crystal imperfections such as dislocation and basal plane stacking fault (BSF) sites. We used H2 to etch undoped c-plane GaN, n-type c-plane GaN, a-plane GaN, and an InGaN/GaN multiple quantum well structure. Several examinations were performed, indicating deep cavities on the c-plane GaN samples after H2 etching; furthermore, gorge-like grooves were observed on the a-plane GaN samples. The deep cavities on the c-plane GaN were considered the etched dislocation sites, and the gorge-like grooves on the a-plane GaN were considered the etched BSF sites. Photoluminescence measurements were performed and the results indicated that the H2-etched samples demonstrate superior optoelectronic properties, probably because of the elimination of dislocations.

Resistless lithography - selective etching of silicon with gallium doping regions

NASA Astrophysics Data System (ADS)

Abdullaev, D.; Milovanov, R.; Zubov, D.

2016-12-01

This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

Fabrication and etching processes of silicon-based PZT thin films

NASA Astrophysics Data System (ADS)

Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian

2001-09-01

Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

Nanoscale silver-assisted wet etching of crystalline silicon for anti-reflection surface textures.

PubMed

Li, Rui; Wang, Shuling; Chuwongin, Santhad; Zhou, Weidong

2013-01-01

We report here an electro-less metal-assisted chemical etching (MacEtch) process as light management surface-texturing technique for single crystalline Si photovoltaics. Random Silver nanostructures were formed on top of the Si surface based on the thin film evaporation and annealing process. Significant reflection reduction was obtained from the fabricated Si sample, with approximately 2% reflection over a wide spectra range (300 to 1050 nm). The work demonstrates the potential of MacEtch process for anti-reflection surface texture fabrication of large area, high efficiency, and low cost thin film solar cell.

Method for detection and imaging over a broad spectral range

DOEpatents

Yefremenko, Volodymyr; Gordiyenko, Eduard; Pishko, legal representative, Olga; Novosad, Valentyn; Pishko, deceased; Vitalii

2007-09-25

A method of controlling the coordinate sensitivity in a superconducting microbolometer employs localized light, heating or magnetic field effects to form normal or mixed state regions on a superconducting film and to control the spatial location. Electron beam lithography and wet chemical etching were applied as pattern transfer processes in epitaxial Y--Ba--Cu--O films. Two different sensor designs were tested: (i) a 3 millimeter long and 40 micrometer wide stripe and (ii) a 1.25 millimeters long, and 50 micron wide meandering-like structure. Scanning the laser beam along the stripe leads to physical displacement of the sensitive area, and, therefore, may be used as a basis for imaging over a broad spectral range. Forming the superconducting film as a meandering structure provides the equivalent of a two-dimensional detector array. Advantages of this approach are simplicity of detector fabrication, and simplicity of the read-out process requiring only two electrical terminals.

Energy spectrum of 50-250 MeV/nucleon iron nuclei inside the MIR space craft.

PubMed

Gunther, W; Leugner, D; Becker, E; Heinrich, W; Reitz, G

2002-10-01

Stacks of CR-39 plastic nuclear track detectors were mounted inside the MIR spacecraft during the EUROMIR95 space mission for a period of 6 months. This long exposure time resulted in a large number of tracks of HZE-particles in the detector foils. All trajectories of stopping iron nuclei could be reconstructed by optimizing the etching conditions so that an automatic track measurement using image analysis techniques was possible. We found 185 stopping iron nuclei and used the énergy-range relation to calculate their energies at the stack surface. The measured spectrum of iron nuclei inside the MIR station is compared to results of model predictions considering the effect of the solar modulation for the mission period, the geomagnetic shielding effect for the MIR orbit and the shielding by material of the spacecraft walls and its instrumentation. c2002 Elsevier Science Ltd. All rights reserved.

Gossip: Gaseous pixels

NASA Astrophysics Data System (ADS)

Koffeman, E. N.

2007-12-01

Several years ago a revolutionary miniature TPC was developed using a pixel chip with a Micromegas foil spanned over it. To overcome the mechanical stability problems and improve the positioning accuracy while spanning a foil on top of a small readout chip a process has been developed in which a Micromegas-like grid is applied on a CMOS wafer in a post-processing step. This aluminum grid is supported on insulating pillars that are created by etching after the grid has been made. The energy resolution (measured on the absorption of the X-rays from a 55Fe source) was remarkably good. Several geometries have since been tested and we now believe that a Gas On Slimmed Silicon Pixel chip' (Gossip) may be realized. The drift region of such a gaseous pixel detector would be reduced to a millimeter. Such a detector is potentially very radiation hard (SLHC vertexing) but aging and sparking must be eliminated.

Auger compositional depth profiling of the metal contact-TlBr interface

NASA Astrophysics Data System (ADS)

Nelson, A. J.; Swanberg, E. L.; Voss, L. F.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Kim, H.; Cirignano, L.; Shah, K.

2015-08-01

Degradation of room temperature operation of TlBr radiation detectors with time is thought to be due to electromigration of Tl and Br vacancies within the crystal as well as the metal contacts migrating into the TlBr crystal itself due to electrochemical reactions at the metal/TlBr interface. Scanning Auger electron spectroscopy (AES) in combination with sputter depth profiling was used to investigate the metal contact surface/interfacial structure on TlBr devices. Device-grade TlBr was polished and subjected to a 32% HCl etch to remove surface damage and create a TlBr1-xClx surface layer prior to metal contact deposition. Auger compositional depth profiling results reveal non-equilibrium interfacial diffusion after device operation in both air and N2 at ambient temperature. These results improve our understanding of contact/device degradation versus operating environment for further enhancing radiation detector performance.

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

NASA Technical Reports Server (NTRS)

Denis, Kevin L.; Brown, Ari D.; Chang, Meng-Ping; Hu, Ron; U-Yen, Kongpop; Wollack, Edward J.

2016-01-01

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. ?

Apollo 17 lunar surface cosmic ray experiment - Measurement of heavy solar wind particles

NASA Technical Reports Server (NTRS)

Zinner, E.; Walker, R. M.; Borg, J.; Maurette, M.

1974-01-01

During the Apollo 17 mission a series of metal foils and nuclear track detectors were exposed both in the sun and in the shade on the surface of the moon. Here we give the analysis of the mica detectors which were used to measure the flux of solar wind particles of Fe-group and heavier elements. These particles register as shallow pits after etching in hydrofluoric acid. Calibration experiments were performed to determine the registration properties of different ions and to simulate the lunar environment. We obtain an Fe-group flux of 39,000 per sec per sq cm, which together with the H flux measured on IMP-7 gives an Fe/H ratio of 0.000041. For elements with Z exceeding 45 we can set only an upper limit on the abundance, ruling out an overabundance of extremely heavy elements relative to iron by a factor of 4.

The response of CR-39 nuclear track detector to 1-9 MeV protons

DOE PAGES

Sinenian, N.; Rosenberg, M. J.; Manuel, M.; ...

2011-10-28

The response of CR-39 nuclear track detector (TasTrak®) to protons in the energy range of 0.92-9.28 MeV has been studied. Previous studies of the CR-39 response to protons have been extended by examining the piece-to-piece variability in addition to the effects of etch time and etchant temperature; it is shown that the shape of the CR-39 response curve to protons can vary from piece-to-piece. The effects due to the age of CR-39 have also been studied using 5.5 MeV alpha particles over a 5-year period. Track diameters were found to degrade with the age of the CR-39 itself rather thanmore » the age of the tracks, consistent with previous studies utilizing different CR-39 over shorter time periods.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bozkurt, A.; Kam, E.

This study assesses the indoor radon concentrations for the city of Edirne situated in the European part of Turkey (Eastern Thrace). A total of 88 CR-39 nuclear track detectors were kept in basements of the selected apartment buildings and houses for passively determining the indoor radon levels of the dwellings for a period of three months. The detectors were then collected and a chemical process of etching was applied to the films. At this stage, the tracks left by alpha particles on the films exposed to radon gas were visible and were counted with a microscope (500xmagnification) to estimate themore » corresponding indoor radon concentrations. The average indoor radon concentration was found to be 49.2 Bq/m3 equivalent to an annual effective dose of 1.24 mSv. The measurement results obtained in this study show no significant departure from the other parts of the country.« less

Enamel Bond Strength of New Universal Adhesive Bonding Agents.

PubMed

McLean, D E; Meyers, E J; Guillory, V L; Vandewalle, K S

2015-01-01

Universal bonding agents have been introduced for use as self-etch or etch-and-rinse adhesives depending on the dental substrate and clinician's preference. The purpose of this study was to evaluate the shear bond strength (SBS) of composite to enamel using universal adhesives compared to a self-etch adhesive when applied in self-etch and etch-and-rinse modes over time. Extracted human third molars were used to create 120 enamel specimens. The specimens were ground flat and randomly divided into three groups: two universal adhesives and one self-etch adhesive. Each group was then subdivided, with half the specimens bonded in self-etch mode and half in etch-and-rinse mode. The adhesives were applied as per manufacturers' instructions, and composite was bonded using a standardized mold and cured incrementally. The groups were further divided into two subgroups with 10 specimens each. One subgroup was stored for 24 hours and the second for six months in 37°C distilled water and tested in shear. Failure mode was also determined for each specimen. A three-way analysis of variance (ANOVA) found a significant difference between groups based on bonding agent (p<0.001) and surface treatment (p<0.001) but not on time (p=0.943), with no significant interaction (p>0.05). Clearfil SE in etch-and-rinse and self-etch modes had more mixed fractures than either universal adhesive in either mode. Etching enamel significantly increased the SBS of composite to enamel. Clearfil SE had significantly greater bond strength to enamel than either universal adhesive, which were not significantly different from each other.

Modeling of block copolymer dry etching for directed self-assembly lithography

NASA Astrophysics Data System (ADS)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pomorski, Michal; Mer-Calfati, Christine; Foulon, Francois

Diamond exhibits a combination of properties which makes it attractive for neutron detection in hostile conditions. In the particular case of detection in a nuclear reactor, it is resilient to radiation, exhibits a natural low sensitivity to gamma rays, and its small size (as compared with that of gas ionisation chambers) enables fluency monitoring with a high position resolution. We report here on the use of synthetic CVD diamond as a solid state micro-fission chamber with U-235 converting material for in-core thermal neutron monitoring. Two types of thin diamond detectors were developed for this application. The first type of detectormore » is fabricated using thin diamond membrane obtained by etching low-cost commercially available single crystal CVD intrinsic diamond, so called 'optical grade' material. Starting from a few hundred of micrometre thick samples, the sample is sliced with a laser and then plasma etched down to a few tenths of micrometre. Here we report the result obtained with a 17 μm thick device. The detection surface of this detector is equal to 1 mm{sup 2}. Detectors with surfaces up to 1 cm{sup 2} can be fabricated with this technique. The second type of detector is fabricated by growing successively two thin films of diamond, by the microwave enhanced chemical vapour deposition technique, on HPHT single crystal diamond. A first, a film of boron doped (p+) single crystal diamond, a few microns thick, is deposited. Then a second film of intrinsic diamond with a thickness of a few tens of microns is deposited. This results in a P doped, Intrinsic, Metal structure (PIM) structure in which the intrinsic volume id the active part of the detector. Here we report the results obtained with a 20 μm thick intrinsic whose detection surface is equal to 0.5 mm{sup 2}, with the possibility to enlarge the surface of the detector up to 1 cm{sup 2}. These two types of detector were tested at the VR-1 research reactor at the Czech Technical University in Prague. The Training Reactor VR-1 is a pool type (light water) reactor based on UO{sub 2} low enriched uranium. It has a nominal power of 1 kW, and can be operated for a short period up to 5 kW. The arrangement of the reactor pool reactor facilitates access to the core, setting and removal of various experimental samples and detectors, and safe and easy handling of fuel assemblies. The reactor is equipped with two horizontal channels (radial and tangential) and 10 vertical channels, of varying diameters, which can be loaded into various core positions, and one pneumatic transfer system. It is also equipped with several specifically designed educational instrumentation systems that can be used to supply complementary measurements and characterization around the reactor. The reactor is operated by the Department of Nuclear Reactors of the Faculty of Nuclear Sciences and Physical Engineering of the Czech Technical University in Prague. The two detectors were placed in-core through one of the vertical insertion channel. They were coupled to remote placed (5 m BNC cable) classical nuclear charge sensitive electronics. Detection properties of both sensors, including: pulse height spectra of U-235 fission fragments (response linearity with neutron flux, count rate, gamma background, were evaluated varying the power of the reactor from 0.005 W to 500 W. The evolution of the counting rate of the thinned optical grade detector as a function of counting rate of a gas ionization chamber used currently for reactor monitoring shows the very good linearity of the detector over the 5 decades. Similar results were obtained with the PIM detector. Additionally fast transient current signals of the detectors were recorded on a digital storage oscilloscope (DSO) using broad-band amplifier and with a simple bias-T, showing potential use of such sensors for neutron counting with no need of an amplification stage, since non-amplified signals from fission fragments exceeded 4 mV in amplitude. Therefore, one can think of simple neutron counting system by feeding diamond detectors signals directly to the low threshold discriminators. The results obtained on the VR1 will be described and discussed in detail in the paper and associated presentation. The results demonstrate that diamond micro-fission chambers can be used for in-core neutron monitoring, where robust, simple and compact devices are required.« less

Nanosecond laser-induced back side wet etching of fused silica with a copper-based absorber liquid

NASA Astrophysics Data System (ADS)

Lorenz, Pierre; Zehnder, Sarah; Ehrhardt, Martin; Frost, Frank; Zimmer, Klaus; Schwaller, Patrick

2014-03-01

Cost-efficient machining of dielectric surfaces with high-precision and low-roughness for industrial applications is still challenging if using laser-patterning processes. Laser induced back side wet etching (LIBWE) using UV laser pulses with liquid heavy metals or aromatic hydrocarbons as absorber allows the fabrication of well-defined, nm precise, free-form surfaces with low surface roughness, e.g., needed for optical applications. The copper-sulphatebased absorber CuSO4/K-Na-Tartrate/NaOH/formaldehyde in water is used for laser-induced deposition of copper. If this absorber can also be used as precursor for laser-induced ablation, promising industrial applications combining surface structuring and deposition within the same setup could be possible. The etching results applying a KrF excimer (248 nm, 25 ns) and a Nd:YAG (1064 nm, 20 ns) laser are compared. The topography of the etched surfaces were analyzed by scanning electron microscopy (SEM), white light interferometry (WLI) as well as laser scanning microscopy (LSM). The chemical composition of the irradiated surface was studied by energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR). For the discussion of the etching mechanism the laser-induced heating was simulated with finite element method (FEM). The results indicate that the UV and IR radiation allows micro structuring of fused silica with the copper-based absorber where the etching process can be explained by the laser-induced formation of a copper-based absorber layer.

Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4F 8 and Ar/CHF 3 plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2015-11-11

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Controllable Fabrication of Non-Close-Packed Colloidal Nanoparticle Arrays by Ion Beam Etching

NASA Astrophysics Data System (ADS)

Yang, Jie; Zhang, Mingling; Lan, Xu; Weng, Xiaokang; Shu, Qijiang; Wang, Rongfei; Qiu, Feng; Wang, Chong; Yang, Yu

2018-06-01

Polystyrene (PS) nanoparticle films with non-close-packed arrays were prepared by using ion beam etching technology. The effects of etching time, beam current, and voltage on the size reduction of PS particles were well investigated. A slow etching rate, about 9.2 nm/min, is obtained for the nanospheres with the diameter of 100 nm. The rate does not maintain constant with increasing the etching time. This may result from the thermal energy accumulated gradually in a long-time bombardment of ion beam. The etching rate increases nonlinearly with the increase of beam current, while it increases firstly then reach its saturation with the increase of beam voltage. The diameter of PS nanoparticles can be controlled in the range from 34 to 88 nm. Based on the non-close-packed arrays of PS nanoparticles, the ordered silicon (Si) nanopillars with their average diameter of 54 nm are fabricated by employing metal-assisted chemical etching technique. Our results pave an effective way to fabricate the ordered nanostructures with the size less than 100 nm.

Restoration of obliterated engraved marks on steel surfaces by chemical etching reagent.

PubMed

Song, Qingfang

2015-05-01

Chemical etching technique is widely used for restoration of obliterated engraved marks on steel surface in the field of public security. The consumed thickness of steel surface during restoration process is considered as a major criterion for evaluating the efficiency of the chemical etching reagent. The thinner the consumed thickness, the higher the restoration efficiency. According to chemical principles, maintaining the continuous oxidative capabilities of etching reagents and increasing the kinetic rate difference of the reaction between the engraved and non-engraved area with the chemical etching reagent can effectively reduce the consumed steel thickness. The study employed steel surface from the engine case of motorcycle and the car frame of automobile. The chemical etching reagents are composed of nitric acid as the oxidizer, hydrofluoric acid as the coordination agent and mixed with glacial acetic acid or acetone as the solvents. Based on the performance evaluation of three different etching reagents, the one composed of HNO3, HF and acetone gave the best result. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Effects of attrition, prior acid-etching, and cyclic loading on the bond strength of a self-etching adhesive system to dentin.

PubMed

Shinkai, Koichi; Ebihara, Takashi; Shirono, Manabu; Seki, Hideaki; Wakaki, Suguru; Suzuki, Masaya; Suzuki, Shiro; Katoh, Yoshiroh

2009-03-01

The purpose of this study was to evaluate the effects of dentin attrition, phosphoric acid etching, and cyclic loading on the microtensile bond strength (microTBS) of a self-etching adhesive system to dentin. Flat dentin surfaces of human molars were assigned to eight experimental groups based on those with or without attrition, prior acid-etching, and cyclic loading. Resin composite paste was placed and polymerized after the bonding procedure according to manufacturer's instructions. The specimens were subjected to microTBS testing at a crosshead speed of 0.5 mm/min. Results showed that the minimum mean value of microTBS was 14.9 MPa in the group without attrition and acid-etching but with loading, while the maximum mean value of microTBS was 40.0 MPa in the group without attrition and loading but with acid etching. Therefore, the value of microTBS to dentin without attrition was significantly decreased by cyclic loading but that to dentin with attrition was not affected.

Highly controllable ICP etching of GaAs based materials for grating fabrication

NASA Astrophysics Data System (ADS)

Weibin, Qiu; Jiaxian, Wang

2012-02-01

Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 D 10 W, RF2 D 20 W and a high ratio of Ar to SiCl4 flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Plasma processing of large curved surfaces for superconducting rf cavity modification

DOE PAGES

Upadhyay, J.; Im, Do; Popović, S.; ...

2014-12-15

In this study, plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl 2/Ar plasma etching has to address several crucial parameters which influence the etching rate and surface roughness, and eventually, determine cavity performance. This includes dependence of the process on the frequency of the RF generator, gas pressure, power level, the driven (inner) electrode configuration, and the chlorine concentration in the gas mixture during plasma processing. To demonstrate surface layer removal in the asymmetric non-planar geometry, we are using a simplemore » cylindrical cavity with 8 ports symmetrically distributed over the cylinder. The ports are used for diagnosing the plasma parameters and as holders for the samples to be etched. The etching rate is highly correlated with the shape of the inner electrode, radio-frequency (RF) circuit elements, chlorine concentration in the Cl 2/Ar gas mixtures, residence time of reactive species and temperature of the cavity. Using cylindrical electrodes with variable radius, large-surface ring-shaped samples and d.c. bias implementation in the external circuit we have demonstrated substantial average etching rates and outlined the possibility to optimize plasma properties with respect to maximum surface processing effect.« less

Measurements of indoor 222RN activity in dwellings and workplaces of Curitiba (Brazil)

NASA Astrophysics Data System (ADS)

Corrêa, Janine N.; Paschuk, Sergei A.; Del Claro, Flávia; Kappke, Jaqueline; Perna, Allan F. N.; Schelin, Hugo R.; Denyak, Valeriy

2014-11-01

The present work describes the results of systematic measurements of radon (222Rn) in residential environments and workplaces in the Metropolitan Region of Curitiba (Paraná State, Brazil) during the period 2004-2012. For radon in air activity measurements, polycarbonate Track Etch Detectors CR-39, mounted in diffusion chambers protected by borosilicate glass fiber filters, were used. After being exposed in air, the CR-39 detectors were submitted to a chemical etching in a 6.25 M NaOH solution at 70 °C for 14 h. The alpha particle tracks were identified and manually counted with an optical microscope, and with the results of previously performed calibrations, the indoor activity concentration of 222Rn was calculated. The calibration of CR-39 and the alpha particle tracks chemical development procedures were performed in collaboration the National Institute of Radiological Sciences (NIRS, Japan). The major part of indoor 222Rn concentration in residences was found to be below 100 Bq/m3. In the case of working places, all measurements of 222Rn concentrations were below 100 Bq/m3. These values are considered within the limits set by international regulatory agencies, such as the US EPA and ICRP, which adopt up to 148 and 300 Bq/m3 as upper values for the reference levels for radon gas activity in dwellings, respectively. The latest value of 300 Bq/m3 for radon activity in air is proposed by ICRP considering the upper value for the individual dose reference level for radon exposure of 10 mSv/yr.

Bond strength with various etching times on young permanent teeth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, W.N.; Lu, T.C.

1991-07-01

Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results ofmore » tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.« less

Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon.

PubMed

Kim, Jeong Dong; Kim, Munho; Kong, Lingyu; Mohseni, Parsian K; Ranganathan, Srikanth; Pachamuthu, Jayavel; Chim, Wai Kin; Chiam, Sing Yang; Coleman, James J; Li, Xiuling

2018-03-14

Defying text definitions of wet etching, metal-assisted chemical etching (MacEtch), a solution-based, damage-free semiconductor etching method, is directional, where the metal catalyst film sinks with the semiconductor etching front, producing 3D semiconductor structures that are complementary to the metal catalyst film pattern. The same recipe that works perfectly to produce ordered array of nanostructures for single-crystalline Si (c-Si) fails completely when applied to polycrystalline Si (poly-Si) with the same doping type and level. Another long-standing challenge for MacEtch is the difficulty of uniformly etching across feature sizes larger than a few micrometers because of the nature of lateral etching. The issue of interface control between the catalyst and the semiconductor in both lateral and vertical directions over time and over distance needs to be systematically addressed. Here, we present a self-anchored catalyst (SAC) MacEtch method, where a nanoporous catalyst film is used to produce nanowires through the pinholes, which in turn physically anchor the catalyst film from detouring as it descends. The systematic vertical etch rate study as a function of porous catalyst diameter from 200 to 900 nm shows that the SAC-MacEtch not only confines the etching direction but also enhances the etch rate due to the increased liquid access path, significantly delaying the onset of the mass-transport-limited critical diameter compared to nonporous catalyst c-Si counterpart. With this enhanced mass transport approach, vias on multistacks of poly-Si/SiO 2 are also formed with excellent vertical registry through the polystack, even though they are separated by SiO 2 which is readily removed by HF alone with no anisotropy. In addition, 320 μm square through-Si-via (TSV) arrays in 550 μm thick c-Si are realized. The ability of SAC-MacEtch to etch through poly/oxide/poly stack as well as more than half millimeter thick silicon with excellent site specificity for a wide range of feature sizes has significant implications for 2.5D/3D photonic and electronic device applications.

Fiber-optic refractometer based on an etched high-Q π-phase-shifted fiber-Bragg-grating.

PubMed

Zhang, Qi; Ianno, Natale J; Han, Ming

2013-07-10

We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q π-phase-shifted fiber-Bragg-grating (πFBG) that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong πFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched πFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit) at an ambient refractive index of 1.318. The reflection spectrum of the etched πFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ~1,550 nm, corresponding to a Q-factor of 7.4 × 10(5), which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings.

Uncladded sensing fiber for refractive index measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhardwaj, V., E-mail: bhardwajphyism@gmail.com; Gangwar, R. K.; Pathak, A. K.

2016-05-06

The formation of chemically etched optical fiber for use in refractive index sensor is addressed. This presented design of a refractive index (RI) sensor is based on recording the power loss exhibited by radiation propagating through an etched multimode fiber (MMF) immersed in the liquid under study. The decreasing diameters of fibers are found to be strongly dependent on the temperature and etchant composition. This experiment was performed for different unclad etched fibers for same sensing length and the RI changes from 1.33 RIU to 1.38 RIU. When the multimode fiber (MMF) is etched for 12 hours the sensitivity ofmore » the sensor is approximately 204.25dBm/RIU, which is larger than without etched fiber having sensitivity 127.2dBm/RIU.« less

The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

PubMed Central

Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A.; Divakar, Darshan Devang; Matinlinna, Jukka P.; Vallittu, Pekka K.

2016-01-01

The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C 4F 8 and Ar/CHF 3 Plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2016-09-08

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

CZT DTRA final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voss, L. F.

The objective of the project is to understand the physical origin of electronic noise injected by the electrical contacts in CZT and CdTe, and moreover to understand how it impacts the current- voltage (IV) relationships of these materials. This understanding is critical to enabling the next crucial enhancement in the performance of CZT radiation detectors, as there have recently been impressive advancements in the growth of CZT crystals, particularly at our commercial partner Redlen Technologies. Redlen scientists have successfully reduced the size of the transport-inhibiting tellurium precipitates to be <3 micrometers, such that, with sufficiently high fields, it is possiblemore » to achieve resolution of <1% at 662 keV using suitable electrode geometries. In contrast to the excellent progress in crystal growth, practitioners in the field of radiation detection have been fabricating rather routine contacts on CZT for nearly two decades; there is no basic understanding of the semiconductor physics of the contacts, and consequently no breakthrough progress in this area. Our objective is to resolve this inadequacy in CZT diode fabrication on the basis of a science-based study, such that CZT detectors can achieve their full promise in performance as superior contacts will enable use of higher fields with lower leakage current – thereby enhancing the resolution that is possible while eliminating the well-known “tailing” effect suffered by the photopeak. Our approach is to develop methods that reduce or eliminate leakage currents in CZT devices through “engineering” the surfaces with novel treatments and structures. This includes using high density plasma etching, doping via ion implantation and metal diffusion, rapid thermal annealing, amorphous semiconductor and dielectric films, and controlled oxide growth. Using these methods, sources of injected and generated noise at the surface can be eliminated via plasma etching and film deposition or oxide growth, while advanced junctions (both homo- and heterojunctions) can be created to eliminate current injection from the metal contacts. The work involves the fabrication and characterization of CZT having a variety of contact structures. Tools capable of evaporating and sputtering metals, together with the usual lithographic and chemical processing methods, are employed. The CZT material employed will be of the highest quality available (Redlen Technologies), and we are engaging Prof. Burger of Fisk University, who is internationally recognized as one of the most accomplished materials physicists in the field on radiation detectors. We have also begun collaborating with Prof. Nicholas Kioussis of Cal State Northridge, Srivananthan Labs (Bolingbrook, IL), and Mark Amman of Lawrence Berkeley National Laboratory, all funded separately by DTRA.« less

Characterising Passive Dosemeters for Dosimetry of Biological Experiments in Space (dobies)

NASA Astrophysics Data System (ADS)

Vanhavere, Filip; Spurny, Frantisek; Yukihara, Eduardo; Genicot, Jean-Louis

Introduction: The DOBIES (Dosimetry of biological experi-ments in space) project focusses on the use of a stan-dard dosimetric method (as a combination of differ-ent passive techniques) to measure accurately the absorbed doses and equivalent doses in biological samples. Dose measurements on biological samples are of high interest in the fields of radiobiology and exobiology. Radiation doses absorbed by biological samples must be quantified to be able to determine the relationship between observed biological effects and the radiation dose. The radiation field in space is very complex, con-sisting of protons, neutrons, electrons and high-energy heavy charged particles. It is not straightfor-ward to measure doses in this radiation field, cer-tainly not with only small and light passive doseme-ters. The properties of the passive detectors must be tested in radiation fields that are representative of the space radiation. We will report on the characterisation of different type of passive detectors at high energy fields. The results from such characterisation measurements will be applied to recent exposures of detectors on the International Space Station. Material and methods: Following passive detectors are used: • thermoluminescent detectors (TLD) • optically stimulated luminescence detectors (OSLD) • track etch detectors (TED) The different groups have participated in the past to the ICCHIBAN series of irradiations. Here protons and other particles of high energy were used to de-termine the LET-dependency of the passive detec-tors. The last few months, new irradiations have been done at the iThemba labs (100-200 MeV protons), Dubna (145 MeV protons) and the JRC-IRMM (quasi mono energetic neutrons up to 19 MeV). All these detectors were also exposed to a simulated space radiation field at CERN (CERF-field). Discussion: The interpretation of the TLD and OSLD results is done using the measured LET spectrum (TED) and the LET-dependency curves of ths TLD and OSLDs. These LET- dependency curves are determined based on the different irradiations listed above. We will report on the results of the different detectors in these fields. Further information on the LET of the space irradia-tion can be deduced from the ratio of the different peaks of the TLDs after glow curve deconvolution, and from the shape of the decay curve of the OSLDs. The results in the CERF field can on the other hand directly being used as a calibration for space radia-tion fields. Conclusion: Combining different passive detectors will lead to improved information on the radiation field, and thus to a better estimation of the absorbed dose to the bio-logical samples. We use the characterisations on high energy accelerators to improve the estimation of some recent space doses.

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the features during the etch process. Herein we will also demonstrate a test case on how a combination or plasma assisted and plasma free etch techniques has the potential to improve process performance of a 193nm immersion based self aligned quandruple patterning (SAQP) for BEOL compliant films (an example shown in Fig 2). In addition, we will also present on the application of gas etches for (1) profile improvement, (2) selective mandrel pull (3) critical dimension trim of mandrels, with an analysis of advantages over conventional techniques in terms of LER and EPE.

Atomic precision etch using a low-electron temperature plasma

NASA Astrophysics Data System (ADS)

Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

2016-03-01

Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

Classification review of dental adhesive systems: from the IV generation to the universal type

PubMed Central

Sofan, Eshrak; Sofan, Afrah; Palaia, Gaspare; Tenore, Gianluca; Romeo, Umberto; Migliau, Guido

2017-01-01

Summary Adhesive dentistry has undergone great progress in the last decades. In light of minimal-invasive dentistry, this new approach promotes a more conservative cavity design, which relies on the effectiveness of current enamel-dentine adhesives. Adhesive dentistry began in 1955 by Buonocore on the benefits of acid etching. With changing technologies, dental adhesives have evolved from no-etch to total-etch (4th and 5th generation) to self-etch (6th, 7th and 8th generation) systems. Currently, bonding to dental substrates is based on three different strategies: 1) etch-and-rinse, 2) self-etch and 3) resin-modified glass-ionomer approach as possessing the unique properties of self-adherence to the tooth tissue. More recently, a new family of dentin adhesives has been introduced (universal or multi-mode adhesives), which may be used either as etch-and-rinse or as self-etch adhesives. The purpose of this article is to review the literature on the current knowledge for each adhesive system according to their classification that have been advocated by many authorities in most operative/restorative procedures. As noted by several valuable studies that have contributed to understanding of bonding to various substrates helps clinicians to choose the appropriate dentin bonding agents for optimal clinical outcomes. PMID:28736601

Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

NASA Astrophysics Data System (ADS)

Naddaf, M.

2017-01-01

Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

Localized etching of polymer films using an atmospheric pressure air microplasma jet

NASA Astrophysics Data System (ADS)

Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

2015-01-01

A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min-1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ.

Bi-stage time evolution of nano-morphology on inductively coupled plasma etched fused silica surface caused by surface morphological transformation

NASA Astrophysics Data System (ADS)

Jiang, Xiaolong; Zhang, Lijuan; Bai, Yang; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Liao, Wei; Zhang, Chuanchao; Yang, Ke; Chen, Jing; Jiang, Yilan; Yuan, Xiaodong

2017-07-01

In this work, we experimentally investigate the surface nano-roughness during the inductively coupled plasma etching of fused silica, and discover a novel bi-stage time evolution of surface nano-morphology. At the beginning, the rms roughness, correlation length and nano-mound dimensions increase linearly and rapidly with etching time. At the second stage, the roughening process slows down dramatically. The switch of evolution stage synchronizes with the morphological change from dual-scale roughness comprising long wavelength underlying surface and superimposed nano-mounds to one scale of nano-mounds. A theoretical model based on surface morphological change is proposed. The key idea is that at the beginning, etched surface is dual-scale, and both larger deposition rate of etch inhibitors and better plasma etching resistance at the surface peaks than surface valleys contribute to the roughness development. After surface morphology transforming into one-scale, the difference of plasma resistance between surface peaks and valleys vanishes, thus the roughening process slows down.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donnelly, Vincent M.; Kornblit, Avinoam

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussionmore » of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.« less

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains.

PubMed

Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

2018-03-23

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H 2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains

NASA Astrophysics Data System (ADS)

Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

2018-03-01

In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

PubMed

Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

2013-08-23

Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joglekar, S.; Azize, M.; Palacios, T.

Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend uponmore » the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.« less

Impact of environmental factors on PADC radon detector sensitivity during long term storage

NASA Astrophysics Data System (ADS)

Wasikiewicz, J. M.

2018-01-01

A broad set of data on poly-allyl diglycol carbonate (PADC) exposure to various environmental conditions has been collected for a period of 1 year in order to study the aging effect on the sensitivity to radon detection. Aging is a phenomenon that occurs during long PADC storage resulting in a loss of sensitivity and/or creation of false tracks. Conditions under investigation were storages under pure nitrogen or air atmospheres, in water solutions of different pHs, in a range of temperatures, humidity and exposure to UV, gamma and neutron radiations. It was found that PADC strongly responds to some external conditions through physical changes in the polymer material; for example, etching of UV exposed detectors led to 10% loss of their thickness and the removal of the tracks layer. Performance of detectors was compared with a control that was the sensitivity of detectors from the same sheet at the time of primary calibration - within 1 month of each sheet being manufactured. Substantial difference in performance was found between storage under pure, dry nitrogen and in the presence of water. The former preserves PADC radon detection properties for the period of one year without noticeable change. The latter, on the other hand significantly reduces its performance even after 3 months' storage. It was also established that storage under low temperature is not a suitable means to preserve PADC sensitivity to radon detection due to significant loss in the detector sensitivity.

A MEMS Infrared Thermopile Fabricated from Silicon-On-Insulator with Phononic Crystal Structures and Carbon Nanotube Absorption Layer

NASA Astrophysics Data System (ADS)

Gray, Kory Forrest

The goal of this project was to examine the possibility of creating a novel thermal infrared detector based on silicon CMOS technology that has been enhanced by the latest nano-engineering discoveries. Silicon typically is not thought as an efficient thermoelectric material. However recent advancements in nanotechnology have improved the potential for a highly sensitive infrared detector based on nano-structured silicon. The thermal conductivity of silicon has been shown to be reduced from 150 W/mK down to 60 W/mK just by decreasing the scale of the silicon from bulk down to the sub-micron scale. Further reduction of the thermal conductivity has been shown by patterning silicon with a phonon crystal structure which has been reported to have thermal conductivities down to 10 W/mK. The phonon crystal structure consists of a 2D array of holes that are etched into the silicon. The size and pitch of the holes are on the order of the mean free path of the phonons in silicon which is approximately 200-500nm. This particular device had 200nm holes on a 400nm pitch. The Seebeck coefficient of silicon can also be enhanced by the reduction of the material from the bulk to sub-micron scale and with degenerate level doping. The combination of decreased thermal conductivity and increased Seebeck coefficient allow silicon to be a promising material for thermoelectric infrared detectors. The highly doped silicon is desired to reduce the electrical resistance of the device. The low electrical resistance is required to reduce the Johnson noise of the device which is the dominant noise source for most thermal detectors. This project designed a MEMS thermopile using a silicon-on-insulator substrate, and a CMOS compatible process. The basic thermopile consists of a silicon dioxide membrane with phononic crystal patterned silicon thermocouples around the edges of the membrane. Vertical aligned, multi-walled, carbon nanotubes were used as the infrared absorption layer. A MEMS thermoelectric detector with a D* of 3 * 107 cm Hz 0.5/W was demonstrated with a time response of 3-10 milliseconds. With this initial research, it is possible to improve the D* to the high 108 cm Hz 0.5/W range by slightly changing the design of the thermopile and patterning the absorption layer.

Research on annealing and properties of TlBr crystals for radiation detector use

NASA Astrophysics Data System (ADS)

Zhiping, Zheng; Yongtao, Yu; Dongxiang, Zhou; Shuping, Gong; Qiuyun, Fu

2014-03-01

In this paper, annealing was carried out in air after cutting, polishing and etching to eliminate defects introduced by crystal and wafer preparation work. The effect of annealing temperature and time on the properties of TlBr crystals was investigated. The crystal quality was characterized by infrared (IR) transmittance spectrum, I-V measurement, XRD and energy response spectrum. In the annealing temperature range (100-320 °C) applied, it was found that higher temperature was more effective for improving quality. Furthermore, it is proved that an appropriate annealing time is vital for better crystal quality.

Exposure to radon in the Gadime Cave, Kosovo.

PubMed

Bahtijari, M; Vaupotic, J; Gregoric, A; Stegnar, P; Kobal, I

2008-02-01

Air radon concentration was measured in summer and winter at 11 points along the tourist guided route in the Gadime Cave in Kosovo using alpha scintillation cells and etched track detectors. At two points in summer, values higher than 1700Bqm(-3) were observed; they otherwise were in the range 400-1000Bqm(-3). Values were lower in winter. The effective dose received by a person during a 90min visit is 3.7microSv in summer and 2.5microSv in winter. For a tourist guide the annual effective dose is less than 3.5mSv.

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

NASA Astrophysics Data System (ADS)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (<30 sec), comparable with the annealing times necessary for dopant activation of p-GaN films and provides an opportunity for streamlining process flow. Plasma etching degrades contact quality on n-GaN films and this degradation has been found to increase with the rf bias levels (ion energies) used, most notably in films with higher doping levels. Immersion in 1:1 mixture of hydrochloric acid and de-ionized water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Impact of substrate etching on plasmonic elements and metamaterials: preventing red shift and improving refractive index sensitivity.

PubMed

Moritake, Yuto; Tanaka, Takuo

2018-02-05

We propose and demonstrate the elimination of substrate influence on plasmon resonance by using selective and isotropic etching of substrates. Preventing the red shift of the resonance due to substrates and improving refractive index sensitivity were experimentally demonstrated by using plasmonic nanostructures fabricated on silicon substrates. Applying substrate etching decreases the effective refractive index around the metal nanostructures, resulting in elimination of the red shift. Improvement of sensitivity to the refractive index environment was demonstrated by using plasmonic metamaterials with Fano resonance based on far field interference. Change in quality factors (Q-factors) of the Fano resonance by substrate etching was also investigated in detail. The presence of a closely positioned substrate distorts the electric field distribution and degrades the Q-factors. Substrate etching dramatically increased the refractive index sensitivity reaching to 1532 nm/RIU since the electric fields under the nanostructures became accessible through substrate etching. The FOM was improved compared to the case without the substrate etching. The method presented in this paper is applicable to a variety of plasmonic structures to eliminate the influence of substrates for realizing high performance plasmonic devices.

Etching of germanium-tin using ammonia peroxide mixture

NASA Astrophysics Data System (ADS)

Dong, Yuan; Ong, Bin Leong; Wang, Wei; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Liang, Gengchiau; Yeo, Yee-Chia

2015-12-01

The wet etching of germanium-tin (Ge1-xSnx) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge1-xSnx is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge1-xSnx surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge0.918Sn0.082 samples. Both root-mean-square roughness and undulation periods of the Ge1-xSnx surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge1-xSnx using APM and may be used for the fabrication of Ge1-xSnx-based electronic and photonic devices.

Cross sections for the production of fragments with Z greater than or equal to 8 by fragmentation of Z greater than or equal to 9 and less than or equal to 26 nuclei

NASA Technical Reports Server (NTRS)

Heinrich, W.; Drechsel, H.; Brechtmann, C.; Beer, J.

1985-01-01

Charge changing nuclear collisions in plastic nuclear track detectors were studied using a new experimental technique of automatic track measurement for etched tracks in plastic detectors. Partial cross sections for the production of fragments of charge Z approximately 8 were measured for projectile nuclei of charge 9 approximately Z approximately 26 in the detector material CR39 and in silver. for this purpose three independent experiments were performed using Bevalac beams. The first one was an exposure of a stack of CR39 plastic plates to 1.8 GeV/nucl. Ar-40 nuclei. The second one was an exposure of another CR39 stack of 1.7 GeV/nucl. Fe-56 projectiles. In the third experiment a mixed stack of CR39 plates and silver foils was irradiated with 1.7 GeV/nucl. Fe-56 nuclei. Thus the measurement of nuclear cross sections in a light target (CR39 = C12H18O7) and as well in a heavy target (silver) was possible.

A compactly integrated laser-induced fluorescence detector for microchip electrophoresis.

PubMed

Li, Hai-Fang; Lin, Jin-Ming; Su, Rong-Guo; Uchiyama, Katsumi; Hobo, Toshiyuki

2004-06-01

A simple and easy-to-use integrated laser-induced fluorescence detector for microchip electrophoresis was constructed and evaluated. The fluid channels and optical fiber channels in the glass microchip were fabricated using standard photolithographic techniques and wet chemical etching. A 473 nm diode-pumped laser was used as the excitation source, and the collimation and collection optics and mirrors were discarded by using a multimode optical fiber to couple the excitation light straight into the microchannel and placing the microchip directly on the top of the photomultiplier tube. A combination of filter systems was incorporated into a poly(dimethylsiloxane) layer, which was reversibly sealed to the bottom of the microchip to eliminate the scattering excitation light reaching to the photomultiplier tube. Fluorescein/calcein samples were taken as model analytes to evaluate the performance with respect to design factors. The detection limits were 0.05 microM for fluorescein and 0.18 microM for calcein, respectively. The suitability of this simple detector for fluorescence detection was demonstrated by baseline separation of fluorescein isothiocyanate (FITC)-labeled arginine, phenylalanine, and glycine and FITC within 30 s at separation length of 3.8 cm and electrical field strength of 600 V/cm.

CR-39 track detector calibration for H, He, and C ions from 0.1-0.5 MeV up to 5 MeV for laser-induced nuclear fusion product identification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baccou, C., E-mail: claire.baccou@polytechnique.edu; Yahia, V.; Labaune, C.

Laser-accelerated ion beams can be used in many applications and, especially, to initiate nuclear reactions out of thermal equilibrium. We have experimentally studied aneutronic fusion reactions induced by protons accelerated by the Target Normal Sheath Acceleration mechanism, colliding with a boron target. Such experiments require a rigorous method to identify the reaction products (alpha particles) collected in detectors among a few other ion species such as protons or carbon ions, for example. CR-39 track detectors are widely used because they are mostly sensitive to ions and their efficiency is near 100%. We present a complete calibration of CR-39 track detectormore » for protons, alpha particles, and carbon ions. We give measurements of their track diameters for energy ranging from hundreds of keV to a few MeV and for etching times between 1 and 8 h. We used these results to identify alpha particles in our experiments on proton-boron fusion reactions initiated by laser-accelerated protons. We show that their number clearly increases when the boron fuel is preformed in a plasma state.« less

Unveiling the mechanisms of dressed-photon-phonon etching based on hierarchical surface roughness measure

NASA Astrophysics Data System (ADS)

Naruse, Makoto; Yatsui, Takashi; Nomura, Wataru; Kawazoe, Tadashi; Aida, Masaki; Ohtsu, Motoichi

2013-02-01

Dressed-photon-phonon (DPP) etching is a disruptive technology in planarizing material surfaces because it completely eliminates mechanical contact processes. However, adequate metrics for evaluating the surface roughness and the underlying physical mechanisms are still not well understood. Here, we propose a two-dimensional hierarchical surface roughness measure, inspired by the Allan variance, that represents the effectiveness of DPP etching while conserving the original two-dimensional surface topology. Also, we build a simple physical model of DPP etching that agrees well with the experimental observations, which clearly shows the involvement of the intrinsic hierarchical properties of dressed photons, or optical near-fields, in the surface processing.

Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

DOE PAGES

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; ...

2015-11-18

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

CDU improvement technology of etching pattern using photo lithography

NASA Astrophysics Data System (ADS)

Tadokoro, Masahide; Shinozuka, Shinichi; Jyousaka, Megumi; Ogata, Kunie; Morimoto, Tamotsu; Konishi, Yoshitaka

2008-03-01

Semiconductor manufacturing technology has shifted towards finer design rules, and demands for critical dimension uniformity (CDU) of resist patterns have become greater than ever. One of the methods for improving Resist Pattern CDU is to control post-exposure bake (PEB) temperature. When ArF resist is used, there is a certain relationship between critical dimension (CD) and PEB temperature. By utilizing this relationship, Resist Pattern CDU can be improved through control of within-wafer temperature distribution in the PEB process. Resist Pattern CDU improvement contributes to Etching Pattern CDU improvement to a certain degree. To further improve Etching Pattern CDU, etcher-specific CD variation needs to be controlled. In this evaluation, 1. We verified whether etcher-specific CD variation can be controlled and consequently Etching Pattern CDU can be further improved by controlling resist patterns through PEB control. 2. Verifying whether Etching Pattern CDU improvement through has any effect on the reduction in wiring resistance variation. The evaluation procedure is as follows.1. Wafers with base film of Doped Poly-Si (D-Poly) were prepared. 2. Resist patterns were created on them. 3. To determine etcher-specific characteristics, the first etching was performed, and after cleaning off the resist and BARC, CD of etched D-Poly was measured. 4. Using the obtained within-wafer CD distribution of the etching patterns, within-wafer temperature distribution in the PEB process was modified. 5. Resist patterns were created again, followed by the second etching and cleaning, which was followed by CD measurement. We used Optical CD Measurement (OCD) for measurement of resist patterns and etching patterns as OCD is minimally affected by Line Edge Roughness (LER). As a result, 1. We confirmed the effect of Resist Pattern CD control through PEB control on the reduction in etcher-specific CD variation and the improvement in Etching Pattern CDU. 2. The improvement in Etching Pattern CDU has an effect on the reduction in wiring resistance variation. The method for Etching Pattern CDU improvement through PEB control reduces within-wafer variation of MOS transistor's gate length. Therefore, with this method, we can expect to observe uniform within-wafer MOS transistor characteristics.

Fiber-Optic Refractometer Based on an Etched High-Q π-Phase-Shifted Fiber-Bragg-Grating

PubMed Central

Zhang, Qi; Ianno, Natale J.; Han, Ming

2013-01-01

We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q π-phase-shifted fiber-Bragg-grating (πFBG) that is chemically etched to the core of the fiber. Due to the π phase-shift, a strong πFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched πFBG demonstrated here has a diameter of ∼9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit) at an ambient refractive index of 1.318. The reflection spectrum of the etched πFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ∼1,550 nm, corresponding to a Q-factor of 7.4 × 105, which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings. PMID:23845932

Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

NASA Astrophysics Data System (ADS)

Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

2014-11-01

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD)

PubMed Central

Nazarov, Denis V.; Zemtsova, Elena G.; Valiev, Ruslan Z.; Smirnov, Vladimir M.

2015-01-01

In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD), chemical etching and atomic layer deposition (ALD). For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions) and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD). Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material. PMID:28793716

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

NASA Astrophysics Data System (ADS)

Manouras, Theodoros; Kazazis, Dimitrios; Koufakis, Eleftherios; Ekinci, Yasin; Vamvakaki, Maria; Argitis, Panagiotis

2018-03-01

The main target of the current work was to develop new sensitive polymeric materials for lithographic applications, focusing in particular to EUV lithography, the main chain of which is cleaved under the influence of photogenerated acid. Resist materials based on the cleavage of polymer main chain are in principle capable to create very small structures, to the dimensions of the monomers that they consist of. Nevertheless, in the case of the commonly used nonchemically amplified materials of this type issues like sensitivity and poor etch resistance limit their areas of application, whereas inadequate etch resistance and non- satisfactory process reliability are the usual problems encountered in acid catalysed materials based on main chain scission. In our material design the acid catalyzed chain cleavable polymers contain very sensitive moieties in their backbone while they remain intact in alkaline ambient. These newly synthesized polymers bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behavior, adhesion to the substrate). Our approach for achieving acceptable etch resistance, a main drawback in other main chain cleavable resists, is based on the introduction of polyaromatic hydrocarbons in the polymeric backbone, whereas the incorporation of an inorganic component further enhances the etch resistance. Single component systems can also be designed following the proposed approach by the incorporation of suitable PAGs and base quencher molecules in the main chain. Resist formulations based on a random copolymer designed according to the described rules evaluated in EUV exhibit ultrahigh sensitivity, capability for high resolution patterning and overall processing characteristics that make them strong candidates for industrial use upon further optimization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Innovations in bonding to zirconia-based materials: Part I.

PubMed

Aboushelib, Moustafa N; Matinlinna, Jukka P; Salameh, Ziad; Ounsi, Hani

2008-09-01

Establishing a reliable bond to zirconia-based materials has proven to be difficult which is the major limitation against fabricating adhesive zirconia restorations. This bond could be improved using novel selective infiltration etching conditioning in combination with engineered zirconia primers. Aim of the work was to evaluate resin-to-zirconia bond strength using selective infiltration etching and novel silane-based zirconia primers. Zirconia discs (Procera Zirconia) received selective infiltration etching surface treatment followed by coating with either of five especially engineered experimental zirconia primers. Pre-aged resin-composite discs (Tetric Ivo Ceram) were bonded to the treated surface using an MDP-containing resin-composite (Panavia F 2.0). The bilayered specimens were cut into microbars and the microtensile bond strength (MTBS) was evaluated. 'As-sintered' zirconia discs served as a control (alpha=0.05). The broken microbars were examined using a scanning electron microscope (SEM). The combination of selective infiltration etching with experimental zirconia primers significantly improved (F=3805, P<0.0001) the MTBS values (41+/-5.8 MPa) compared to the 'as-sintered' surface using the same primers which demonstrated spontaneous failure and very low bond strength values (2.6+/-3.1 MPa). SEM analysis revealed that selective infiltration etching surface treatment resulted in a nano-retentive surface where the zirconia primers were able to penetrate and interlock which explained the higher MTBS values observed for the treated specimens.

Single- and two-color infrared focal plane arrays made by MBE in HgCdTe

NASA Astrophysics Data System (ADS)

Zanatta, Jean-Paul; Ferret, P.; Loyer, R.; Petroz, G.; Cremer, S.; Chamonal, Jean-Paul; Bouchut, Philippe; Million, Alain; Destefanis, Gerard L.

2000-12-01

We present here recent developments obtained at LETI infrared laboratory in the field of infrared detectors made in HgCdTe material and using the molecular beam epitaxial growth technique (MBE). We discuss the metallurgical points (growth temperature and flux control) that lead to achieve excellent quality epitaxial layers grown by MBE. We show a run-to-run reproducibility measured on growth run of more than 15 layers. The crystalline quality, surface morphology, and composition uniformity are excellent. The etch pits density (EPD) are in the low 105.cm-2 when HgCdTe grows on a CdZnTe substrate. Transport properties reveal a low n-type carrier concentration in the 1014 to 1015.cm-3 range with a carrier mobility in excess of 105 cm2/V/sec at 77K for epilayers grown with 10 micrometers cutoff wavelength. We describe the performances of several kinds of our HgCdTe- MBE devices: single color MWIR and LWIR detectors on HgCdTe/CdZnTe operating at 77K in respectively (3-5 micrometers ) and (8-12 micrometers ) wavelength range; single color MWIR detectors on HgCdTe grown on germanium heterosubstrate operating at 77K in the (3-5 micrometers ) wavelength range; two color HgCdTe detectors operating within the MWIR (3-5 micrometers ) band.

The development of an energy-independent personnel neutron dosimeter using CR-39

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doremus, S.W.

The addition of specialized (n,{alpha}) radiators to a standard polyethylene/CR-39 (PE/CR-39) neutron dosimetry system was evaluated for improved response to low energy neutrons. Specialized radiators consisting of poly(vinyl alcohol) complexed with boron (natural and enriched boron-10) and poly(acrylic acid) complexed with lithium (enriched lithium-6) were evaluated. The complexion of boron with poly(vinyl alcohol) was accomplished by incorporation or surface coating. The complexion of lithium with poly(acrylic acid) was exclusively performed by incorporation. The dosimeter was designed such that the specialized radiator was in contact with the CR-39 detector (i.e., the specialized radiator was sandwiched between the CR-39 detector and polyethylenemore » radiator). The neutron response of this dosimetry system was investigated using {sup 252}Cf (moderated and bare) spontaneous fission neutrons. Detectors were chemically etched and then read with a Nikon OPTIPHOT microscope. The mean response (tracks {center dot} field{sup {minus}1}) of detectors treated with specialized (n,{alpha}) radiators were evaluated against PE/CR-39 controls. The results of this investigation demonstrate that PE/CR-39 dosimeters equipped with specialized (n,{alpha}) radiators have a noticeable response to low energy neutrons that in many instances is significantly greater than that of the controls. The addition of specialized radiators to this dosimetry system did not effect (diminish) its response to fast neutrons.« less

Measurement of LET distribution and dose equivalent on board the space shuttle STS-65

NASA Technical Reports Server (NTRS)

Hayashi, T.; Doke, T.; Kikuchi, J.; Takeuchi, R.; Hasebe, N.; Ogura, K.; Nagaoka, S.; Kato, M.; Badhwar, G. D.

1996-01-01

Space radiation dosimetry measurements have been made on board the Space Shuttle STS-65 in the Second International Microgravity Laboratory (IML-2). In these measurements, three kinds of detectors were used; one is a newly developed active detector telescope called "Real-time Radiation Monitoring Device (RRMD)" utilizing silicon semi-conductor detectors and others are conventional detectors of thermoluminescence dosimeters (TLDs) and CR-39 plastic track detectors. Using the RRMD detector, the first attempt of real-time monitoring of space radiation has been achieved successfully for a continuous period of 251.3 h, giving the temporal variations of LET distribution, particle count rates, and rates of absorbed dose and dose equivalent. The RRMD results indicate that a clear enhancement of the number of trapped particles is seen at the South Atlantic Anomaly (SAA) without clear enhancement of dose equivalent, while some daily periodic enhancements of dose equivalent due to high LET particles are seen at the lower geomagnetic cutoff regions for galactic cosmic ray particles (GCRs). Therefore, the main contribution to dose equivalent is seen to be due to GCRs in this low altitude mission (300 km). Also, the dose equivalent rates obtained by TLDs and CR-39 ranged from 146.9 to 165.2 microSv/day and the average quality factors from 1.45 to 1.57 depending on the locations and directions of detectors inside the Space-lab at this highly protected orbit for space radiation with a small inclination (28.5 degrees) and a low altitude (300 km). The LET distributions obtained by two different detectors, RRMD and CR-39, are in good agreement in the region of 15-200 keV/mm and difference of these distributions in the regions of LET < 15 keV/mm and LET > 200 keV/mm can be explained by considering characteristics of CR-39 etched track formation especially for the low LET tracks.

Measurement of LET distribution and dose equivalent on board the space shuttle STS-65.

PubMed

Hayashi, T; Doke, T; Kikuchi, J; Takeuchi, R; Hasebe, N; Ogura, K; Nagaoka, S; Kato, M; Badhwar, G D

1996-11-01

Space radiation dosimetry measurements have been made on board the Space Shuttle STS-65 in the Second International Microgravity Laboratory (IML-2). In these measurements, three kinds of detectors were used; one is a newly developed active detector telescope called "Real-time Radiation Monitoring Device (RRMD)" utilizing silicon semi-conductor detectors and others are conventional detectors of thermoluminescence dosimeters (TLDs) and CR-39 plastic track detectors. Using the RRMD detector, the first attempt of real-time monitoring of space radiation has been achieved successfully for a continuous period of 251.3 h, giving the temporal variations of LET distribution, particle count rates, and rates of absorbed dose and dose equivalent. The RRMD results indicate that a clear enhancement of the number of trapped particles is seen at the South Atlantic Anomaly (SAA) without clear enhancement of dose equivalent, while some daily periodic enhancements of dose equivalent due to high LET particles are seen at the lower geomagnetic cutoff regions for galactic cosmic ray particles (GCRs). Therefore, the main contribution to dose equivalent is seen to be due to GCRs in this low altitude mission (300 km). Also, the dose equivalent rates obtained by TLDs and CR-39 ranged from 146.9 to 165.2 microSv/day and the average quality factors from 1.45 to 1.57 depending on the locations and directions of detectors inside the Space-lab at this highly protected orbit for space radiation with a small inclination (28.5 degrees) and a low altitude (300 km). The LET distributions obtained by two different detectors, RRMD and CR-39, are in good agreement in the region of 15-200 keV/mm and difference of these distributions in the regions of LET < 15 keV/mm and LET > 200 keV/mm can be explained by considering characteristics of CR-39 etched track formation especially for the low LET tracks.

Anisotropic etching of amorphous perfluoropolymer films in oxygen-based inductively coupled plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ono, Takao; Akagi, Takanori; Center for NanoBio Integration, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656

2009-01-01

An amorphous perfluoropolymer, 'Cytop' (Asahi Glass Co., Ltd.), is a preferable material for the fabrication of micro total analysis system devices because of its superior optical transparency over a wide wavelength range and low refractive index of 1.34, which is almost the same as that of water, as well as excellent chemical stability. To establish the precise microfabrication technology for this unique resin, the dry etching of the amorphous perfluoropolymer in Ar/O{sub 2} low-pressure inductively coupled plasma has been studied. A relatively high etch rate of approximately 6.3 {mu}m/min at maximum and highly anisotropic etched features was attained. Plasma measurementsmore » by a single Langmuir probe technique and actinometry revealed that etching is dominated by ion-assisted surface desorption above a 10%O{sub 2} mixing ratio, whereas the supply of active oxygen species is the rate-limiting process below 10%. Moreover, angled x-ray photoelectron spectroscopy measurements of an etched trench pattern revealed that a high anisotropy is attributed to the formation of a carbon-rich sidewall protection layer.« less

Acoustic emission analysis of tooth-composite interfacial debonding.

PubMed

Cho, N Y; Ferracane, J L; Lee, I B

2013-01-01

This study detected tooth-composite interfacial debonding during composite restoration by means of acoustic emission (AE) analysis and investigated the effects of composite properties and adhesives on AE characteristics. The polymerization shrinkage, peak shrinkage rate, flexural modulus, and shrinkage stress of a methacrylate-based universal hybrid, a flowable, and a silorane-based composite were measured. Class I cavities on 49 extracted premolars were restored with 1 of the 3 composites and 1 of the following adhesives: 2 etch-and-rinse adhesives, 2 self-etch adhesives, and an adhesive for the silorane-based composite. AE analysis was done for 2,000 sec during light-curing. The silorane-based composite exhibited the lowest shrinkage (rate), the longest time to peak shrinkage rate, the lowest shrinkage stress, and the fewest AE events. AE events were detected immediately after the beginning of light-curing in most composite-adhesive combinations, but not until 40 sec after light-curing began for the silorane-based composite. AE events were concentrated at the initial stage of curing in self-etch adhesives compared with etch-and-rinse adhesives. Reducing the shrinkage (rate) of composites resulted in reduced shrinkage stress and less debonding, as evidenced by fewer AE events. AE is an effective technique for monitoring, in real time, the debonding kinetics at the tooth-composite interface.

Optical-Based Sensors for Monitoring Corrosion of Reinforcement Rebar via an Etched Cladding Bragg Grating

PubMed Central

Hassan, Muhammad Rosdi Abu; Bakar, Muhammad Hafiz Abu; Dambul, Katrina; Adikan, Faisal Rafiq Mahamd

2012-01-01

In this paper, we present the development and testing of an optical-based sensor for monitoring the corrosion of reinforcement rebar. The testing was carried out using an 80% etched-cladding Fibre Bragg grating sensor to monitor the production of corrosion waste in a localized region of the rebar. Progression of corrosion can be sensed by observing the reflected wavelength shift of the FBG sensor. With the presence of corrosion, the etched-FBG reflected spectrum was shifted by 1.0 nm. In addition, with an increase in fringe pattern and continuously, step-like drop in power of the Bragg reflected spectrum was also displayed. PMID:23202233

Dual-hole Photonic Crystal Fiber Intermodal Interference based Refractometer

NASA Astrophysics Data System (ADS)

Liu, Feng; Guo, Xuan; Zhang, Qing; Fu, Xinghu

2017-12-01

A refractive-index (RI) sensor and its sensing characteristics based on intermodal interference of dual-hole Polarization Maintaining Photonic Crystal Fiber (PM-PCF) are demonstrated in this letter. The sensor works from the interference between LP01 and LP11 modes of hydrofluoric acid etched PM-PCF. The influence of corrosion zone radius on the RI sensing sensitivity is also discussed. Via choosing a 2.5 cm etched PM-PCF(the etched area radius is 27.5 μm) and 650 nm laser, the sensor exhibits the RI sensitivity of 7.48 V/RIU. The simple sensor structure and inexpensive demodulation method can make this technology for online refractive index measurement in widespread areas.

High density plasma etching of magnetic devices

NASA Astrophysics Data System (ADS)

Jung, Kee Bum

Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3-rich to achieve the highest etch rates. Several different mask materials were investigated, including photoresist, thermal oxide and deposited oxide. Photoresist etches very rapidly in CO/NH 3 and use of a hard mask is necessary to achieve pattern transfer. Due to its physically dominated nature, the CO/NH3 chemistry appears suited to shallow etch depth (≤0.5mum) applications, but mask erosion leads to sloped feature sidewalls for deeper features.

InAs/Ga(In)Sb type-II superlattices short/middle dual color infrared detectors

NASA Astrophysics Data System (ADS)

Shi, Yanli; Hu, Rui; Deng, Gongrong; He, Wenjing; Feng, Jiangmin; Fang, Mingguo; Li, Xue; Deng, Jun

2015-06-01

Short wavelength and middle wavelength dual color infrared detector were designed and prepared with InAs/Ga(In)Sb type-II superlattices materials. The Crosslight software was used to calculate the relation between wavelength and material parameter such as thickness of InAs, GaSb, then energy strucutre of 100 periods 8ML/8ML InAs/GaSb and the absorption wavelength was calculated. After fixing InAs/GaSb thickness parameter, devices with nBn and pin structure were designed and prepared to compare performance of these two structures. Comparison results showed both structure devices were available for high temperature operation which black detectivity under 200K were 7.9×108cmHz1/2/W for nBn and 1.9×109cmHz1/2/W for pin respectively. Considering the simultaneous readout requirement for further FPAs application the NIP/PIN InAs/GaSb dual-color structure was grown by MBE method. Both two mesas and one mesa devices structure were designed and prepared to appreciate the short/middle dual color devices. Cl2-based ICP etching combined with phosphoric acid based chemicals were utilized to form mesas, silicon dioxide was deposited via PECVD as passivation layer. Ti/Au was used as metallization. Once the devices were finished, the electro-optical performance was measured. Measurement results showed that optical spectrum response with peak wavelength of 2.7μm and 4.3μm under 77K temperature was gained, the test results agree well with calculated results. Peak detectivity was measured as 2.08×1011cmHz1/2/W and 6.2×1010cmHz1/2/W for short and middle wavelength infrared detector respectively. Study results disclosed that InAs/Ga(In)Sb type-II SLs is available for both short and middle wavelength infrared detecting with good performance by simply altering the thickness of InAs layer and GaSb layer.

Germanium Lift-Off Masks for Thin Metal Film Patterning

NASA Technical Reports Server (NTRS)

Brown, Ari

2012-01-01

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Consideration of correlativity between litho and etching shape

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2012-03-01

We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

Assessment of microleakage of class V restored by resin composite and resin-modified glass ionomer and pit and fissure resin-based sealants following Er:YAG laser conditioning and acid etching: in vitro study

PubMed Central

Luong, Emilie; Shayegan, Amir

2018-01-01

Aim The aim of this study was to make a comparison between microleakage of conventionally restored class V cavities using acid etchant and the ones conditioned by erbium-doped yttrium aluminum garnet (Er:YAG) laser, and also to assess and compare the effectiveness of enamel surface treatments of occlusal pits and fissures by acid etching and conditioned by Er:YAG laser-etch. Materials and methods Seventy-two extracted third molars were used in this study. The samples were divided into two major groups: class V cavities and pit and fissure sealants. Each subgroup was divided into conventional acid etching, Er:YAG laser conditioning and conventional acid etching, and combination with Er:YAG laser conditioning (n=12). The teeth were placed in 2% methylene blue dye solution, were sectioned, and were evaluated according to the dye penetration criteria. Two samples per subgroup were chosen for scanning electron microscopic (SEM) analysis. Results There was a significant difference between occlusal and cervical margin groups. Laser conventional composite cementum group showed more microleakage values compared to other groups. There was no significant difference between occlusal margin groups. However, there was a significant difference between cervical margin groups in terms of microleakage. In sealant groups, there was a significant difference between laser and conventional with/without laser treatment groups in terms of microleakage. Conclusion Based on the results reported in this study, it can be concluded that the application of the Er:YAG laser beneath the resin composite, the resin-modified glass ionomers (GIs), and the fissure sealant placement may be an alternative enamel and dentin etching method to acid etching. PMID:29881311

TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

NASA Astrophysics Data System (ADS)

Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

2009-03-01

An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The downside of needing liquid nitrogen to perform cryogenic etching can be improved by using a new approach in which both the pulsed and mixed modes are combined into the so-called puffed mode. Alternatively, the use of tetra-ethyl-ortho-silicate (TEOS) as a silicon oxide precursor is proposed to enable sufficient inhibiting strength and improved profile control up to room temperature. Pulsed-mode processing, the second important aspect, is commonly performed in a cycle using two separate steps: etch and deposition. Sometimes, a three-step cycle is adopted using a separate step to clean the bottom of etching features. This study highlights an issue, known by the authors but not discussed before in the literature: the need for proper synchronization between gas and bias pulses to explore the benefit of three steps. The transport of gas from the mass flow controller towards the wafer takes time, whereas the application of bias to the wafer is relatively instantaneous. This delay causes a problem with respect to synchronization when decreasing the step time towards a value close to the gas residence time. It is proposed to upgrade the software with a delay time module for the bias pulses to be in pace with the gas pulses. If properly designed, the delay module makes it possible to switch on the bias exactly during the arrival of the gas for the bottom removal step and so it will minimize the ionic impact because now etch and deposition steps can be performed virtually without bias. This will increase the mask etch selectivity and lower the heat impact significantly. Moreover, the extra bottom removal step can be performed at (also synchronized!) low pressure and therefore opens a window for improved aspect ratios. The temperature control of the wafer, a third aspect of this study, at a higher etch rate and longer etch time, needs critical attention, because it drastically limits the DRIE performance. It is stressed that the exothermic reaction (high silicon loading) and ionic impact (due to metallic masks and/or exposed silicon) are the main sources of heat that might raise the wafer temperature uncontrollably, and they show the weakness of the helium backside technique using mechanical clamping. Electrostatic clamping, an alternative technique, should minimize this problem because it is less susceptible to heat transfer when its thermal resistance and the gap of the helium backside cavity are minimized; however, it is not a subject of the current study. Because oxygen-growth-based etch processes (due to their ultra thin inhibiting layer) rely more heavily on a constant wafer temperature than fluorocarbon-based processes, oxygen etches are more affected by temperature fluctuations and drifts during the etching. The fourth outcome of this review is a phenomenological model, which explains and predicts many features with respect to loading, flow and pressure behaviour in DRIE equipment including a diffusion zone. The model is a reshape of the flow model constructed by Mogab, who studied the loading effect in plasma etching. Despite the downside of needing a cryostat, it is shown that—when selecting proper conditions—a cryogenic two-step pulsed mode can be used as a successful technique to achieve high speed and selective plasma etching with an etch rate around 25 µm min-1 (<1% silicon load) with nearly vertical walls and resist etch selectivity beyond 1000. With the model in hand, it can be predicted that the etch rate can be doubled (50 µm min-1 at an efficiency of 33% for the fluorine generation from the SF6 feed gas) by minimizing the time the free radicals need to pass the diffusion zone. It is anticipated that this residence time can be reduced sufficiently by a proper inductive coupled plasma (ICP) source design (e.g. plasma shower head and concentrator). In order to preserve the correct profile at such high etch rates, the pressure during the bottom removal step should be minimized and, therefore, the synchronized three-step pulsed mode is believed to be essential to reach such high etch rates with sufficient profile control. In order to improve the etch rate even further, the ICP power should be enhanced; the upgrading of the turbopump seems not yet to be relevant because the throttle valve in the current study had to be used to restrict the turbo efficiency. In order to have a versatile list of state-of-the-art references, it has been decided to arrange it in subjects. The categories concerning plasma physics and applications are, for example, books, reviews, general topics, fluorine-based plasmas, plasma mixtures with oxygen at room temperature, wafer heat transfer and high aspect ratio trench (HART) etching. For readers 'new' to this field, it is advisable to study at least one (but rather more than one) of the reviews concerning plasma as found in the first 30 references. In many cases, a paper can be classified into more than one category. In such cases, the paper is directed to the subject most suited for the discussion of the current review. For example, many papers on heat transfer also treat cryogenic conditions and all the references dealing with highly anisotropic behaviour have been directed to the category HARTs. Additional pointers could get around this problem but have the disadvantage of creating a kind of written spaghetti. I hope that the adapted organization structure will help to have a quick look at and understanding of current developments in high aspect ratio plasma etching. Enjoy reading... Henri Jansen 18 June 2008

Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

NASA Astrophysics Data System (ADS)

Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

2004-05-01

A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

Proton induced target fragmentation studies on solid state nuclear track detectors using Carbon radiators

NASA Astrophysics Data System (ADS)

Szabó, J.; Pálfalvi, J. K.; Strádi, A.; Bilski, P.; Swakoń, J.; Stolarczyk, L.

2018-04-01

One of the limiting factors of an astronaut's career is the dose received from space radiation. High energy protons, being the main components of the complex radiation field present on a spacecraft, give a significant contribution to the dose. To investigate the behavior of solid state nuclear track detectors (SSNTDs) if they are irradiated by such particles, SSNTD stacks containing carbon blocks were exposed to high energy proton beams (70, 100, 150 and 230 MeV) at the Proteus cyclotron, IFJ PAN -Krakow. The incident protons cannot be detected directly; however, tracks of secondary particles, recoils and fragments of the constituent atoms of the detector material and of the carbon radiator are formed. It was found that as the proton energy increases, the number of tracks induced in the PADC material by secondary particles decreases. From the measured geometrical parameters of the tracks the linear energy transfer (LET) spectrum and the dosimetric quantities were determined, applying appropriate calibration. In the LET spectra the LET range of the most important secondary particles could be identified and their abundance showed differences in the spectra if the detectors were short or long etched. The LET spectra obtained on the SSNTDs irradiated by protons were compared to LET spectra of detectors flown on the International Space Station (ISS): they were quite similar, resulting in a quality factor difference of only 5%. Thermoluminescent detectors (TLDs) were applied in each case to measure the dose from primary protons and other lower LET particles present in space. Comparing and analyzing the results of the TLD and SSNTD measurements, it was obtained that proton induced target fragments contributed to the total absorbed dose in 3.2% and to the dose equivalent in 14.2% in this particular space experiment.

Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Jacobs, R. N.; Stoltz, A. J.; Benson, J. D.; Smith, P.; Lennon, C. M.; Almeida, L. A.; Farrell, S.; Wijewarnasuriya, P. S.; Brill, G.; Chen, Y.; Salmon, M.; Zu, J.

2013-11-01

Due to its strong infrared absorption and variable band-gap, HgCdTe is the ideal detector material for high-performance infrared focal-plane arrays (IRFPAs). Next-generation IRFPAs will utilize dual-color high-definition formats on large-area substrates such as Si or GaAs. However, heteroepitaxial growth on these substrates is plagued by high densities of lattice-mismatch-induced threading dislocations (TDs) that ultimately reduce IRFPA operability. Previously we demonstrated a postgrowth technique with the potential to eliminate or move TDs such that they have less impact on detector operability. In this technique, highly reticulated mesa structures are produced in as-grown HgCdTe epilayers, and then subjected to thermal cycle annealing. To fully exploit this technique, better understanding of the inherent mechanism is required. In this work, we employ scanning transmission electron microscopy (STEM) analysis of HgCdTe/CdTe/Si(211) samples prepared by focused ion beam milling. A key factor is the use of defect-decorated samples, which allows for a correlation of etch pits observed on the surface with underlying dislocation segments viewed in cross-section STEM images. We perform an analysis of these dislocations in terms of the general distribution, density, and mobility at various locations within the mesa structures. Based on our observations, we suggest factors that contribute to the underlying mechanism for dislocation gettering.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

Enhanced spectroscopic gas sensors using in-situ grown carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Luca, A.; Cole, M. T.; Milne, W. I.

2015-05-11

In this letter, we present a fully complementary-metal-oxide-semiconductor (CMOS) compatible microelectromechanical system thermopile infrared (IR) detector employing vertically aligned multi-walled carbon nanotubes (CNT) as an advanced nano-engineered radiation absorbing material. The detector was fabricated using a commercial silicon-on-insulator (SOI) process with tungsten metallization, comprising a silicon thermopile and a tungsten resistive micro-heater, both embedded within a dielectric membrane formed by a deep-reactive ion etch following CMOS processing. In-situ CNT growth on the device was achieved by direct thermal chemical vapour deposition using the integrated micro-heater as a micro-reactor. The growth of the CNT absorption layer was verified through scanning electronmore » microscopy, transmission electron microscopy, and Raman spectroscopy. The functional effects of the nanostructured ad-layer were assessed by comparing CNT-coated thermopiles to uncoated thermopiles. Fourier transform IR spectroscopy showed that the radiation absorbing properties of the CNT adlayer significantly enhanced the absorptivity, compared with the uncoated thermopile, across the IR spectrum (3 μm–15.5 μm). This led to a four-fold amplification of the detected infrared signal (4.26 μm) in a CO{sub 2} non-dispersive-IR gas sensor system. The presence of the CNT layer was shown not to degrade the robustness of the uncoated devices, whilst the 50% modulation depth of the detector was only marginally reduced by 1.5 Hz. Moreover, we find that the 50% normalized absorption angular profile is subsequently more collimated by 8°. Our results demonstrate the viability of a CNT-based SOI CMOS IR sensor for low cost air quality monitoring.« less

Ultra-compact MEMS FTIR spectrometer

NASA Astrophysics Data System (ADS)

Sabry, Yasser M.; Hassan, Khaled; Anwar, Momen; Alharon, Mohamed H.; Medhat, Mostafa; Adib, George A.; Dumont, Rich; Saadany, Bassam; Khalil, Diaa

2017-05-01

Portable and handheld spectrometers are being developed and commercialized in the late few years leveraging the rapidly-progressing technology and triggering new markets in the field of on-site spectroscopic analysis. Although handheld devices were commercialized for the near-infrared spectroscopy (NIRS), their size and cost stand as an obstacle against the deployment of the spectrometer as spectral sensing components needed for the smart phone industry and the IoT applications. In this work we report a chip-sized microelectromechanical system (MEMS)-based FTIR spectrometer. The core optical engine of the solution is built using a passive-alignment integration technique for a selfaligned MEMS chip; self-aligned microoptics and a single detector in a tiny package sized about 1 cm3. The MEMS chip is a monolithic, high-throughput scanning Michelson interferometer fabricated using deep reactive ion etching technology of silicon-on-insulator substrate. The micro-optical part is used for conditioning the input/output light to/from the MEMS and for further light direction to the detector. Thanks to the all-reflective design of the conditioning microoptics, the performance is free of chromatic aberration. Complemented by the excellent transmission properties of the silicon in the infrared region, the integrated solution allows very wide spectral range of operation. The reported sensor's spectral resolution is about 33 cm-1 and working in the range of 1270 nm to 2700 nm; upper limited by the extended InGaAs detector. The presented solution provides a low cost, low power, tiny size, wide wavelength range NIR spectral sensor that can be manufactured with extremely high volumes. All these features promise the compatibility of this technology with the forthcoming demand of smart portable and IoT devices.

Developing Barbed Microtip-Based Electrode Arrays for Biopotential Measurement

PubMed Central

Hsu, Li-Sheng; Tung, Shu-Wei; Kuo, Che-Hsi; Yang, Yao-Joe

2014-01-01

This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS) polymer, and a polyvinylchloride (PVC) film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG) and electrocardiography (ECG) recordings using these electrode prototypes were also demonstrated. PMID:25014098

Determination of total fluoride in HF/HNO3/H2SiF6 etch solutions by new potentiometric titration methods.

PubMed

Weinreich, Wenke; Acker, Jörg; Gräber, Iris

2007-03-30

In the photovoltaic industry the etching of silicon in HF/HNO(3) solutions is a decisive process for cleaning wafer surfaces or to produce certain surface morphologies like polishing or texturization. With regard to cost efficiency, a maximal utilisation of etch baths in combination with highest quality and accuracy is strived. To provide an etch bath control realised by a replenishment with concentrated acids the main constituents of these HF/HNO(3) etch solutions including the reaction product H(2)SiF(6) have to be analysed. Two new methods for the determination of the total fluoride content in an acidic etch solution based on the precipitation titration with La(NO(3))(3) are presented within this paper. The first method bases on the proper choice of the reaction conditions, since free fluoride ions have to be liberated from HF and H(2)SiF(6) at the same time to be detected by a fluoride ion-selective electrode (F-ISE). Therefore, the sample is adjusted to a pH of 8 for total cleavage of the SiF(6)(2-) anion and titrated in absence of buffers. In a second method, the titration with La(NO(3))(3) is followed by a change of the pH-value using a HF resistant glass-electrode. Both methods provide consistent values, whereas the analysis is fast and accurate, and thus, applicable for industrial process control.

From ‘petal effect’ to ‘lotus effect’ on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

NASA Astrophysics Data System (ADS)

Frankiewicz, Christophe; Zoueshtiagh, Farzam; Talbi, Abdelkrim; Streque, Jérémy; Pernod, Philippe; Merlen, Alain

2014-11-01

A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named ‘Silastic S’ for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new process with an electrodeposited thin Nickel (Ni) layer as a mask to obtain a more precise pattern transfer for deep etching (ii) to investigate the etch rates and the etch profiles obtained under various plasma conditions (gas mixture ratios and pressure). The resulting process exhibits etch rates that range from 20 µm h-1 to 40 µm h-1. The process was optimized to obtain anisotropic profiles of the edges. Finally, it is shown that (iii) the wetting contact angle could be easily modified with this process from 103° to 162°, with a hysteresis that ranges from 2° to 140°. The process is, at present, the only reported solution to reproduce the ‘petal effect’ (high contact angle hysteresis value) on a highly flexible substrate. A possibility to control the contact angle hysteresis from the ‘petal effect’ to the ‘lotus effect’ (low contact angle hysteresis value) has been investigated to allow a precise control on the required energy to pin or unpin the contact line of water droplets. This opens multiple possibilities to exploit this elastomer in many microfluidics applications.

Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch

NASA Astrophysics Data System (ADS)

Mailfert, Julien; Van de Kerkhove, Jeroen; De Bisschop, Peter; De Meyer, Kristin

2014-03-01

A Metal1-layer (M1) patterning study is conducted on 20nm node (N20) for random-logic applications. We quantified the printability performance on our test vehicle for N20, corresponding to Poly/M1 pitches of 90/64nm, and with a selected minimum M1 gap size of 70nm. The Metal1 layer is patterned with 193nm immersion lithography (193i) using Negative Tone Developer (NTD) resist, and a double-patterning Litho-Etch-Litho-Etch (LELE) process. Our study is based on Logic test blocks that we OPCed with a combination of calibrated models for litho and for etch. We report the Overlapping Process Window (OPW), based on a selection of test structures measured after-etch. We find that most of the OPW limiting structures are EOL (End-of-Line) configurations. Further analysis of these individual OPW limiters will reveal that they belong to different types, such as Resist 3D (R3D) and Mask 3D (M3D) sensitive structures, limiters related to OPC (Optical Proximity Corrections) options such as assist placement, or the choice of CD metrics and tolerances for calculation of the process windows itself. To guide this investigation, we will consider a `reference OPC' case to be compared with other solutions. In addition, rigorous simulations and OPC verifications will complete the after-etch measurements to help us to validate our experimental findings.

New MOEMS based systems appropriate for spectroscopic investigations on agricultural growth and perishable food conditions

NASA Astrophysics Data System (ADS)

Grueger, Heinrich; Schenk, Harald; Heberer, Andreas; Zimmer, Fabian; Scherff, Werner; Kenda, Andreas; Frank, Albert

2005-11-01

Further optimization of the agricultural growth process and quality control of perishable food which can be fruits and vegetables as well as every kind of meat or milk product requires new approaches for the sensitive front end. One possibility is reflectance or fluorescence spectroscopy in a wide wavelength range. By now broad usage is hindered by costs, size and performance of existing systems. MOEMS scanning gratings for spectrometers and translational mirrors for Fourier Transform spectroscopy enable small robust systems working in a range from 200nm to 5μm. Both types use digital signal processors (DSPs) capable to compute the spectra and execute complex evaluation and decision algorithms. The MOEMS chips are realized by anisotropic etching of a silicon on insulator (SOI) substrate. First the backside silicon and buried oxide is removed by a wet process then the front side structure is realized by dry etching. Depending on the bearing springs a silicon plate up to 3 x 3 mm2 wide and typically 30μm thick can be driven resonantly to rotational or translational movement. Combined with additional optical components and appropriate detectors handheld Czerny-Turner or Fourier Transform spectrometers have been realized and tested. Results of first measurements of reflection spectroscopy on model substances have been performed with both system types in the NIR range. Measurements on real objects like tomatoes or apples are intended for a wider wavelength range. Future systems may contain displays and light sources as well as data storage cards or additional interfaces.

Effects of different orthodontic primers on enamel demineralization around orthodontic brackets.

PubMed

Baysal, Asli; Yasa, Asli; Sogut, Ozlem; Ozturk, Mehmet Ali; Uysal, Tancan

2015-09-01

The purpose of this work is to evaluate the effectiveness of one self-etching and two filled orthodontic primers on enamel demineralization around orthodontic brackets. Brackets were bonded to 84 bovine teeth and the vestibular enamel surfaces covered with acid-resistant nail varnish exposing 1 mm of space on each side of the bracket base. The teeth were allocated to four groups, using either Transbond XT conventional primer on etched enamel (group 1), Transbond Plus Self-Etching Primer on untreated enamel (group 2), Pro Seal filled resin primer on etched enamel (group 3), or Opal Seal filled resin primer on etched enamel (group 4). Each tooth was subjected to 15,000 strokes of brushing followed by exposure to an acid challenge. Calcium-ion release from each sample was calculated using atomic absorption spectrophotometry. Data were analyzed using one-way ANOVA and a post hoc Tukey test. Differences were considered statistically significant at p ≤ 0.05. Statistically significant differences were observed between the four groups (p < 0.001). No significant difference was found between the controls (group 1) and the Opal Seal group. Higher calcium release was observed in the Pro Seal group and the self-etching primer group compared to the controls. The highest calcium release was recorded in the self-etching primer group. Filled sealants may not have a protective effect against enamel demineralization. Transbond Plus Self-Etching Primer should be used cautiously, considering the risk of demineralization involved in its application.

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

NASA Astrophysics Data System (ADS)

Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

2018-05-01

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer ( 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm2/V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

CUORE: The Three Towers Test

NASA Astrophysics Data System (ADS)

Sparks, Laura; Goodsell, Alison

2009-11-01

Cryogenic Underground Observatory for Rare Events (CUORE) will be part of the next generation of detectors used to search for neutrinoless double beta decay (0vBB). Located in Assergi, Italy at the Gran Sasso National Laboratory (LNGS), CUORE will be a large cryogenic bolometer composed of 988 tellurium dioxide (TeO2) detectors with a total mass of 750 kg, and will search for 0vBB in 130Te. As the experiment will monitor the extremely rare event of 0vBB, all factors contributing to background need to be minimized to effectively increase the sensitivity. We assisted the LNGS researchers over the summer of 2008 by supporting Research and Development efforts to reduce the radioactive background of the experiment. Activities involved decontaminating the copper frame of radon daughters, and chemically etching and lapping the TeO2 crystals with nitric acid and silicon dioxide, respectively, to remove surface contaminants that contribute to background counts. This work was supported in part by NSF grant PHY-0653284 and the California State Faculty Support Grant.

Measurement of ion beam angular distribution at different helium gas pressures in a plasma focus device by large-area polycarbonate detectors

NASA Astrophysics Data System (ADS)

Sohrabi, M.; Habibi, M.; Ramezani, V.

2017-02-01

The paper presents an experimental study and analysis of full helium ion density angular distributions in a 4-kJ plasma focus device (PFD) at pressures of 10, 15, 25, and 30 mbar using large-area polycarbonate track detectors (PCTDs) (15-cm etchable diameter) processed by 50-Hz-HV electrochemical etching (ECE). Helium ion track distributions at different pressures, in particular, at the main axis of the PFD are presented. Maximum ion track density of 4.4 × 104 tracks/cm2 was obtained in the PCTD placed 6 cm from the anode. The ion distributions for all pressures applied are ring-shaped, which is possibly due to the hollow cylindrical copper anode used. The large-area PCTD processed by ECE proves, at the present state-of-theart, a superior method for direct observation and analysis of ion distributions at a glance with minimum efforts and time. Some observations of the ion density distributions at different pressures are reported and discussed.

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

NASA Astrophysics Data System (ADS)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

Addition of Si-Containing Gases for Anisotropic Etching of III-V Materials in Chlorine-Based Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Gatilova, Lina; Bouchoule, Sophie; Patriarche, Gilles; Guilet, Stephane

2011-08-01

We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl2- and HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH4 or SiCl4). A vertical and smooth etching profile is demonstrated in SiCl4/H2 plasma. The effect of adding of a small amount of SiH4 to a previously optimised Cl2/H2 chemistry is presented, and new SiH4/Cl2 and SiH4/HBr chemistries are proposed. Ex-situ energy-dispersive X-ray spectroscopy coupled to transmission electron microscopy (EDX-TEM) is used to analyze the composition of the thin passivation layer deposited on the etched sidewalls. We show that it consists of a Si-rich silicon oxide (Si/O˜1) in Cl2/H2/SiH4 chemistry, and is changed to nano-crystalline (nc-) Si in SiH4/Cl2 chemistry depending on the SiH4 percentage. Moreover, we show that deep anisotropic etching of InP independent of the electrode coverplate material can be obtained via a SiOx passivation mechanism with the addition of Si-containing gases.

Trapezoidal diffraction grating beam splitters in single crystal diamond

NASA Astrophysics Data System (ADS)

Kiss, Marcell; Graziosi, Teodoro; Quack, Niels

2018-02-01

Single Crystal Diamond has been recognized as a prime material for optical components in high power applications due to low absorption and high thermal conductivity. However, diamond microstructuring remains challenging. Here, we report on the fabrication and characterization of optical diffraction gratings exhibiting a symmetric trapezoidal profile etched into a single crystal diamond substrate. The optimized grating geometry diffracts the transmitted optical power into precisely defined proportions, performing as an effective beam splitter. We fabricate our gratings in commercially available single crystal CVD diamond plates (2.6mm x 2.6mm x 0.3mm). Using a sputter deposited hard mask and patterning by contact lithography, the diamond is etched in an inductively coupled oxygen plasma with zero platen power. The etch process effectively reveals the characteristic {111} diamond crystal planes, creating a precisely defined angled (54.7°) profile. SEM and AFM measurements of the fabricated gratings evidence the trapezoidal shape with a pitch of 3.82μm, depth of 170 nm and duty cycle of 35.5%. Optical characterization is performed in transmission using a 650nm laser source perpendicular to the sample. The recorded transmitted optical power as function of detector rotation angle shows a distribution of 21.1% in the 0th order and 23.6% in each +/-1st order (16.1% reflected, 16.6% in higher orders). To our knowledge, this is the first demonstration of diffraction gratings with trapezoidal profile in single crystal diamond. The fabrication process will enable beam splitter gratings of custom defined optical power distribution profiles, while antireflection coatings can increase the efficiency.

Effects of Different Surface Treatments on the Tensile Bond Strength of Polymethyl Methacrylate Processed against Chemically Etched Ticonium 100

DTIC Science & Technology

1988-01-01

is more physical. In dental bonding systems, primary bonding is the ultimate goal, though it is more . likely that present systems are more of the...Ohno et al. 31 ,34 were the first to study the-adhesion of dental adhesives containing 4-META. They utilized adhesion models based on the measured... handpiece and a #2 round carbide bur. Etching of Specimens * Sticky wax was applied to the periphery of the surfaces to be etched. All specimens were

A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, Banat, E-mail: banatgul@gmail.com; Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp; Aman-ur-Rehman, E-mail: amansadiq@gmail.com

Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBrmore » by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.« less

Effect of surface etching and electrodeposition of copper on nitinol

NASA Astrophysics Data System (ADS)

Ramos-Moore, E.; Rosenkranz, A.; Matamala, L. F.; Videla, A.; Durán, A.; Ramos-Grez, J.

2017-10-01

Nitinol-based materials are very promising for medical and dental applications since those materials can combine shape memory, corrosion resistance, biocompatibility and antibacterial properties. In particular, surface modifications and coating deposition can be used to tailor and to unify those properties. We report preliminary results on the study of the effect of surface etching and electrodeposition of Copper on Nitinol using optical, chemical and thermal techniques. The results show that surface etching enhances the surface roughness of Nitinol, induces the formation of Copper-based compounds at the Nitinol-Copper interface, reduces the austenitic-martensitic transformations enthalpies and reduces the Copper coating roughness. Further studies are needed in order to highlight the influence of the electrodeposited Copper on the memory shape properties of NiTi.

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

2018-03-01

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu; Li, Chen

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and comparedmore » to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Effect of different surface treatments on roughness of IPS Empress 2 ceramic.

PubMed

Kara, Haluk Baris; Dilber, Erhan; Koc, Ozlem; Ozturk, A Nilgun; Bulbul, Mehmet

2012-03-01

The aim of this study was to evaluate the influence of different surface treatments (air abrasion, acid etching, laser irradiation) on the surface roughness of a lithium-disilicate-based core ceramic. A total of 40 discs of lithium disilicate-based core ceramic (IPS Empress 2; Ivoclar Vivadent, Schaan, Liechtenstein) were prepared (10 mm in diameter and 1 mm in thickness) according to the manufacturer's instructions. Specimens were divided into four groups (n = 10), and the following treatments were applied: air abrasion with alumina particles (50 μm), acid etching with 5% hydrofluoric acid, Nd:YAG laser irradiation (1 mm distance, 100 mJ, 20 Hz, 2 W) and Er:YAG laser irradiation (1 mm distance, 500 mJ, 20 Hz, 10 W). Following determination of surface roughness (R(a)) by profilometry, specimens were examined with atomic force microscopy. The data were analysed by one-way analysis of variance (ANOVA) and Tukey HSD test (α = 0.05). One-way ANOVA indicated that surface roughness following air abrasion was significantly different from the surface roughness following laser irradiation and acid etching (P < 0.001). The Tukey HSD test indicated that the air abrasion group had a significantly higher mean value of roughness (P < 0.05) than the other groups. No significant difference was found between the acid etching and laser irradiation (both Er:YAG and Nd:YAG) groups (P > 0.05). Air abrasion increased surface roughness of lithium disilicate-based core ceramic surfaces more effectively than acid-etching and laser irradiation.

Durability to oxygen reactive ion etching enhanced by addition of synthesized bis(trimethylsilyl)phenyl-containing (meth)acrylates in ultraviolet nanoimprint lithography

NASA Astrophysics Data System (ADS)

Ito, Shunya; Sato, Hiroki; Tasaki, Yuhei; Watanuki, Kimihito; Nemoto, Nobukatsu; Nakagawa, Masaru

2016-06-01

We investigated the selection of bis(trimethylsilyl)phenyl-containing (meth)acrylates as additives to improve the durability to oxygen reactive ion etching (O2 RIE) of sub-50 nm imprint resist patterns suitable for bubble-defect-free UV nanoimprinting with a readily condensable gas. 2,5-Bis(2-acryloyloxyethoxy)-1,4-bis(trimethylsilyl)benzene, which has a diacrylate chemical structure similar to that of glycerol 1,3-diglycerolate diacrylate used as a base monomer, and 3-(2-methacryloyloxyethoxy)-1-(hydroxylethoxy)-2-propoxy-3,5-bis(trimethylsilyl)benzene, which has a hydroxy group similar to the base monomer, were synthesized taking into consideration the Ohnishi and ring parameters, and the oxidization of the trimethylsilyl moiety to inorganic species during O2 RIE. The addition of the latter liquid additive to the base monomer decreased etching rate owing to the good miscibility of the additive in the base monomer, while the addition of the former crystalline additive caused phase separation after UV nanoimprinting. The latter additive worked as a compatibilizer to the former additive, which is preferred for etching durability improvement. The coexistence of the additives enabled the fabrication of a 45 nm line-and-space resist pattern by UV nanoimprinting, and its residual layer could be removed by O2 RIE.

Development of a framework of quality assurance practices for a radon passive dosemeter service.

PubMed

D'Alessandro, M; Leonardi, F; Tonnarini, S; Trevisi, R; Veschetti, M

2010-06-01

Etched track detectors are widely used for the detection of radon and its decay products. The reliability of radon measurement performed with such devices requires that laboratories producing analytical data are able to provide results of the required quality. The need for uniform results from laboratories at an international level therefore requires the implementation of a quality assurance programme, the harmonization of criteria, sampling procedures, calculations and the reporting of results, agreed on the basis of fundamental principles and international standards. The quality assurance programme described here is the first step on the way to ISO/IEC 17025 certification for the RI-RN (ISPESL) laboratory.

Study of Carbon Nanotubes as Etching Masks and Related Applications in the Surface Modification of GaAs-based Light-Emitting Diodes.

PubMed

Jin, Yuanhao; Li, Qunqing; Chen, Mo; Li, Guanhong; Zhao, Yudan; Xiao, Xiaoyang; Wang, Jiaping; Jiang, Kaili; Fan, Shoushan

2015-09-02

The surface modification of LEDs based on GaAs is realized by super-aligned multiwalled carbon nanotube (SACNT) networks as etching masks. The surface morphology of SACNT networks is transferred to the GaAs. It is found that the light output power of LEDs based on GaAs with a nanostructured surface morphology is greatly enhanced with the electrical power unchanged. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bend measurement using an etched fiber incorporating a fiber Bragg grating.

PubMed

Rauf, Abdul; Zhao, Jianlin; Jiang, Biqiang; Jiang, Yajun; Jiang, Wei

2013-01-15

A fiber Bragg grating (FBG) based bend measurement method using an etched fiber is proposed that utilizes the coupling of the core mode to the cladding and radiation modes at the bending region. An etching region of 99 µm diameter that serves as bend sensing head is achieved at 10 mm upstream the FBG through processing in 40% hydrofluoric acid, while the FBG acts as a narrowband reflector to enhance the sensitivity. The power variation curves are obtained for a wide range of bend angles, but the performance is limited due to the presence of the loss peaks. The sensing response is improved by immersing the etching region in a refractive index matching gel. The results are analyzed by using curve fitting formulas and are in good agreement. A large dynamic range of -27° to +27° and sensitivity of 0.43 dBm/deg is achieved, which can be enhanced by reducing the etched diameter.

Characteristics of n-GaN After Cl2/Ar and Cl2/N2 Inductively Coupled Plasma Etching

NASA Astrophysics Data System (ADS)

Han, Yan-Jun; Xue, Song; Guo, Wen-Ping; Sun, Chang-Zheng; Hao, Zhi-Biao; Luo, Yi

2003-10-01

A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current-voltage (I-V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.

Diode laser sensor to monitor HCL in a plasma etch reactor

NASA Astrophysics Data System (ADS)

Kim, Suhong; Klimecky, Pete; Chou, Shang-I.; Jeffries, Jay B.; Terry, Fred L., Jr.; Hanson, Ronald K.

2002-09-01

Absorption measurements of HCl during plasma etching of poly-silicon are made using the P(4) transition in the first vibrational overtone band near 1.79 μm. Single path absorption provides a real-time HCl monitor during etching of six-inch wafers in a commercial Lam Research 9400SE reactor at the University of Michigan. Wavelength modulation at 10.7 MHz is used to distinguish the absorption signal from the strong plasma emission. The laser center frequency is ramp-tuned at 500 Hz providing an HCl measurement every 2ms. Direct absorption measurements without the plasma are used to calibrate the wavelength modulation signal. The minimum detectable absorbance was 5x(10)-6 with 50 ms averaging, leading to an HCl detection limit of ~(10)12cm-3. For a given ratio of the feedstock HBr/Cl2, the measured HCl concentration tracks the average etch rate. These measurements demonstrate the feasibility of a real-time diode laser-based etch rate sensor.

Near-infrared diode laser hydrogen fluoride monitor for dielectric etch

NASA Astrophysics Data System (ADS)

Xu, Ning; Pirkle, David R.; Jeffries, Jay B.; McMillin, Brian; Hanson, Ronald K.

2004-11-01

A hydrogen fluoride (HF) monitor, using a tunable diode laser, is designed and used to detect the etch endpoints for dielectric film etching in a commercial plasma reactor. The reactor plasma contains HF, a reaction product of feedstock gas CF4 and the hydrogen-containing films (photoresist, SiOCH) on the substrate. A near-infrared diode laser is used to scan the P(3) transition in the first overtone of HF near 1.31 μm to monitor changes in the level of HF concentration in the plasma. Using 200 ms averaging and a signal modulation technique, we estimate a minimum detectable HF absorbance of 6×10-5 in the etch plasma, corresponding to an HF partial pressure of 0.03 mTorr. The sensor could indicate, in situ, the SiOCH over tetraethoxysilane oxide (TEOS) trench endpoint, which was not readily discerned by optical emission. These measurements demonstrate the feasibility of a real-time diode laser-based sensor for etch endpoint monitoring and a potential for process control.

In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marchack, Nathan; Kim, Taeseung; Chang, Jane P., E-mail: jpchang@seas.ucla.edu

2015-05-15

The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy andmore » the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.« less

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

PubMed Central

Kawakami, Masatoshi; Metzler, Dominik; Li, Chen; Oehrlein, Gottlieb S.

2016-01-01

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C4F8 injection. The C4F8 and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number. PMID:27375342

Maskless and low-destructive nanofabrication on quartz by friction-induced selective etching

PubMed Central

2013-01-01

A low-destructive friction-induced nanofabrication method is proposed to produce three-dimensional nanostructures on a quartz surface. Without any template, nanofabrication can be achieved by low-destructive scanning on a target area and post-etching in a KOH solution. Various nanostructures, such as slopes, hierarchical stages and chessboard-like patterns, can be fabricated on the quartz surface. Although the rise of etching temperature can improve fabrication efficiency, fabrication depth is dependent only upon contact pressure and scanning cycles. With the increase of contact pressure during scanning, selective etching thickness of the scanned area increases from 0 to 2.9 nm before the yield of the quartz surface and then tends to stabilise after the appearance of a wear. Refabrication on existing nanostructures can be realised to produce deeper structures on the quartz surface. Based on Arrhenius fitting of the etching rate and transmission electron microscopy characterization of the nanostructure, fabrication mechanism could be attributed to the selective etching of the friction-induced amorphous layer on the quartz surface. As a maskless and low-destructive technique, the proposed friction-induced method will open up new possibilities for further nanofabrication. PMID:23531381

A novel 2D silicon nano-mold fabrication technique for linear nanochannels over a 4 inch diameter substrate

PubMed Central

Yin, Zhifu; Qi, Liping; Zou, Helin; Sun, Lei

2016-01-01

A novel low-cost 2D silicon nano-mold fabrication technique was developed based on Cu inclined-deposition and Ar+ (argon ion) etching. With this technique, sub-100 nm 2D (two dimensional) nano-channels can be etched economically over the whole area of a 4 inch n-type <100> silicon wafer. The fabricating process consists of only 4 steps, UV (Ultraviolet) lithography, inclined Cu deposition, Ar+ sputter etching, and photoresist & Cu removing. During this nano-mold fabrication process, we investigated the influence of the deposition angle on the width of the nano-channels and the effect of Ar+ etching time on their depth. Post-etching measurements showed the accuracy of the nanochannels over the whole area: the variation in width is 10%, in depth it is 11%. However, post-etching measurements also showed the accuracy of the nanochannels between chips: the variation in width is 2%, in depth it is 5%. With this newly developed technology, low-cost and large scale 2D nano-molds can be fabricated, which allows commercial manufacturing of nano-components over large areas. PMID:26752559

Study of flowability effect on self-planarization performance at SOC materials

NASA Astrophysics Data System (ADS)

Yun, Huichan; Kim, Jinhyung; Park, Youjung; Kim, Yoona; Jeong, Seulgi; Baek, Jaeyeol; Yoon, Byeri; Lim, Sanghak

2017-03-01

For multilayer process, importance of carbon-based spin-on hardmask material that replaces amorphous carbon layer (ACL) is ever increasing. Carbon-based spin-on hardmask is an organic polymer with high carbon content formulated in organic solvents for spin-coating application that is cured through baking. In comparison to CVD process for ACL, carbon-based spin-on hardmask material can offer several benefits: lower cost of ownership (CoO) and improved process time, as well as better gap-fill and planarization performances. Thus carbon-based spin-on hardmask material of high etch resistance, good gap-fill properties and global planarization performances over various pattern topographies are desired to achieve the fine patterning and high aspect ratio (A/R). In particular, good level of global planarization of spin coated layer over the underlying pattern topographies is important for self-aligned double patterning (SADP) process as it dictates the photolithographic margin. Herein, we report a copolymer carbon-based spin-on hardmask resin formulation that exhibits favorable film shrinkage profile and good etch resistance properties. By combining the favorable characteristics of each resin - one resin with good shrinkage property and the other with excellent etch resistance into the copolymer, it was possible to achieve a carbonbased spin-on hardmask formulation with desirable level of etch resistance and the planarization performances across various underlying substrate pattern topographies.

WO3 and W Thermal Atomic Layer Etching Using "Conversion-Fluorination" and "Oxidation-Conversion-Fluorination" Mechanisms.

PubMed

Johnson, Nicholas R; George, Steven M

2017-10-04

The thermal atomic layer etching (ALE) of WO 3 and W was demonstrated with new "conversion-fluorination" and "oxidation-conversion-fluorination" etching mechanisms. Both of these mechanisms are based on sequential, self-limiting reactions. WO 3 ALE was achieved by a "conversion-fluorination" mechanism using an AB exposure sequence with boron trichloride (BCl 3 ) and hydrogen fluoride (HF). BCl 3 converts the WO 3 surface to a B 2 O 3 layer while forming volatile WO x Cl y products. Subsequently, HF spontaneously etches the B 2 O 3 layer producing volatile BF 3 and H 2 O products. In situ spectroscopic ellipsometry (SE) studies determined that the BCl 3 and HF reactions were self-limiting versus exposure. The WO 3 ALE etch rates increased with temperature from 0.55 Å/cycle at 128 °C to 4.19 Å/cycle at 207 °C. W served as an etch stop because BCl 3 and HF could not etch the underlying W film. W ALE was performed using a three-step "oxidation-conversion-fluorination" mechanism. In this ABC exposure sequence, the W surface is first oxidized to a WO 3 layer using O 2 /O 3 . Subsequently, the WO 3 layer is etched with BCl 3 and HF. SE could simultaneously monitor the W and WO 3 thicknesses and conversion of W to WO 3 . SE measurements showed that the W film thickness decreased linearly with number of ABC reaction cycles. W ALE was shown to be self-limiting with respect to each reaction in the ABC process. The etch rate for W ALE was ∼2.5 Å/cycle at 207 °C. An oxide thickness of ∼20 Å remained after W ALE, but could be removed by sequential BCl 3 and HF exposures without affecting the W layer. These new etching mechanisms will enable the thermal ALE of a variety of additional metal materials including those that have volatile metal fluorides.

Bonding of universal adhesives to dentine--Old wine in new bottles?

PubMed

Chen, C; Niu, L-N; Xie, H; Zhang, Z-Y; Zhou, L-Q; Jiao, K; Chen, J-H; Pashley, D H; Tay, F R

2015-05-01

Multi-mode universal adhesives offer clinicians the choice of using the etch-and-rinse technique, selective enamel etch technique or self-etch technique to bond to tooth substrates. The present study examined the short-term in vitro performance of five universal adhesives bonded to human coronal dentine. Two hundred non-carious human third molars were assigned to five groups based on the type of the universal adhesives (Prime&Bond Elect, Scotchbond Universal, All-Bond Universal, Clearfil Universal Bond and Futurabond U). Two bonding modes (etch-and-rinse and self-etch) were employed for each adhesive group. Bonded specimens were stored in deionized water for 24h or underwent a 10,000-cycle thermocycling ageing process prior to testing (N=10). Microtensile bond testing (μTBS), transmission electron microscopy (TEM) of resin-dentine interfaces in non-thermocycled specimens and scanning electron microscopy (SEM) of tracer-infused water-rich zones within hybrid layers of thermocycled specimens were performed. Both adhesive type and testing condition (with/without thermocycling) have significant influences on μTBS. The use of each adhesive in either the etch-and-rinse or self-etch application mode did not result in significantly different μTBS to dentine. Hybrid layers created by these adhesives in the etch-and-rinse bonding mode and self-etch bonding mode were ∼5μm and ≤0.5μm thick respectively. Tracer-infused regions could be identified within the resin-dentine interface from all the specimens prepared. The increase in versatility of universal adhesives is not accompanied by technological advances for overcoming the challenges associated with previous generations of adhesives. Therapeutic adhesives with bio-protective and bio-promoting effects are still lacking in commercialized adhesives. Universal adhesives represent manufacturers' attempt to introduce versatility in product design via adaptation of a single-bottle self-etch adhesive for other application modes without compromising its bonding effectiveness. Published by Elsevier Ltd.

Modified TMAH based etchant for improved etching characteristics on Si{1 0 0} wafer

NASA Astrophysics Data System (ADS)

Swarnalatha, V.; Narasimha Rao, A. V.; Ashok, A.; Singh, S. S.; Pal, P.

2017-08-01

Wet bulk micromachining is a popular technique for the fabrication of microstructures in research labs as well as in industry. However, increasing the throughput still remains an active area of research, and can be done by increasing the etching rate. Moreover, the release time of a freestanding structure can be reduced if the undercutting rate at convex corners can be improved. In this paper, we investigate a non-conventional etchant in the form of NH2OH added in 5 wt% tetramethylammonium hydroxide (TMAH) to determine its etching characteristics. Our analysis is focused on a Si{1 0 0} wafer as this is the most widely used in the fabrication of planer devices (e.g. complementary metal oxide semiconductors) and microelectromechanical systems (e.g. inertial sensors). We perform a systematic and parametric analysis with concentrations of NH2OH varying from 5% to 20% in step of 5%, all in 5 wt% TMAH, to obtain the optimum concentration for achieving improved etching characteristics including higher etch rate, undercutting at convex corners, and smooth etched surface morphology. Average surface roughness (R a), etch depth, and undercutting length are measured using a 3D scanning laser microscope. Surface morphology of the etched Si{1 0 0} surface is examined using a scanning electron microscope. Our investigation has revealed a two-fold increment in the etch rate of a {1 0 0} surface with the addition of NH2OH in the TMAH solution. Additionally, the incorporation of NH2OH significantly improves the etched surface morphology and the undercutting at convex corners, which is highly desirable for the quick release of microstructures from the substrate. The results presented in this paper are extremely useful for engineering applications and will open a new direction of research for scientists in both academic and industrial laboratories.

Twin-Slot Antenna-Coupled Superconducting Ti Transition-Edge Sensor at 350 GHz

NASA Astrophysics Data System (ADS)

Zhang, W.; Miao, W.; Wang, Z.; Guo, X. H.; Liu, D.; Zhong, J. Q.; Yao, Q. J.; Shi, S. C.

2018-05-01

We have developed four-leg-supported superconducting Ti transition-edge sensors (TES) formed by KOH wet etching. Energy relaxation mechanism is changed from electron-phonon coupling to diffusive phonon after wet etching. The current-voltage curves of the same TES device were measured before and after wet etching. After wet etching, its thermal conductance (G) is reduced to 500 pW/K from 8950 pW/K. The measured effective response time (τ eff) is 143 μs, about 30 times larger. In addition, we have studied the optical noise equivalent power (NEP) with a cryogenic blackbody in combination with metal-mesh filters to define the radiation bandwidth. The obtained optical NEP is 5 × 10-16 W/√Hz, which is suitable for ground-based astronomical applications.

Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; Vignesparamoorthy, Sivaruban; Mueller, Carl; VanKeuls, Fred; Warner, Joseph; Miranda, Felix A.

2001-01-01

The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Etching of germanium-tin using ammonia peroxide mixture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Yuan; Ong, Bin Leong; Wang, Wei

The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount ofmore » Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gray, D.C.; Tepermeister, I.; Sawin, H.H.

A multiple beam apparatus has been constructed to facilitate the study of ion-enhanced fluorine chemistry on undoped polysilicon and silicon dioxide surfaces by allowing the fluxes of fluorine (F) atoms and argon (Ar{sup +}) ions to be independently varied over several orders of magnitude. The chemical nature of the etching surfaces has been investigated following the vacuum transfer of the sample dies to an adjoining x-ray photoelectron spectroscopy facility. The etching {open_quotes}enhancement{close_quotes} effect of normally incident Ar{sup +} ions has been quantified over a wide range of ion energy through the use of Kaufman and electron cyclotron resonance-type ion sources.more » The increase in per ion etching yield of fluorine saturated silicon and silicon dioxide surfaces with increasing ion energy (E{sub ion}) was found to scale as (E{sub ion}{sup 1/2}-E{sub th}{sup 1/2}), where E{sub th} is the etching threshold energy for the process. Simple near-surface site occupation models have been proposed for the quantification of the ion-enhanced etching kinetics in these systems. Acceptable agreement has been found in comparison of these Ar{sup +}/F etching model predictions with similar Ar{sup +}/XeF{sub 2} studies reported in the literature, as well as with etching rate measurements made in F-based plasmas of gases such as SF{sub 6} and NF{sub 3}. 69 refs., 12 figs., 6 tabs.« less

Semiconducting icosahedral boron arsenide crystal growth for neutron detection

NASA Astrophysics Data System (ADS)

Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

2011-03-01

Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

Environmental scanning electron microscope imaging examples related to particle analysis.

PubMed

Wight, S A; Zeissler, C J

1993-08-01

This work provides examples of some of the imaging capabilities of environmental scanning electron microscopy applied to easily charged samples relevant to particle analysis. Environmental SEM (also referred to as high pressure or low vacuum SEM) can address uncoated samples that are known to be difficult to image. Most of these specimens are difficult to image by conventional SEM even when coated with a conductive layer. Another area where environmental SEM is particularly applicable is for specimens not compatible with high vacuum, such as volatile specimens. Samples from which images were obtained that otherwise may not have been possible by conventional methods included fly ash particles on an oiled plastic membrane impactor substrate, a one micrometer diameter fiber mounted on the end of a wire, uranium oxide particles embedded in oil-bearing cellulose nitrate, teflon and polycarbonate filter materials with collected air particulate matter, polystyrene latex spheres on cellulosic filter paper, polystyrene latex spheres "loosely" sitting on a glass slide, and subsurface tracks in an etched nuclear track-etch detector. Surface charging problems experienced in high vacuum SEMs are virtually eliminated in the low vacuum SEM, extending imaging capabilities to samples previously difficult to use or incompatible with conventional methods.

CF2 Detection in Radio-Frequency Ar/CHF3 Plasmas by Fourier Transform Infrared Spectroscopy

NASA Technical Reports Server (NTRS)

Kim, J. S.; Rao, M. V. V. S.; Cappelli, M. A.; Sharma, S. P.

1999-01-01

CFx radicals, in particular CF2, are instrumental in anisotropic etching of SiO2. In order to optimize the CFx radical population in a given process environment, it is imperative that we understand their production mechanism. Towards this goal, we have conducted a series of quantitative measurements of CF2 radicals in low pressure RF plasmas similar to those used in SiO2 etching. In this study, we present preliminary results for Ar/CHF3 plasmas operating at pressures ranging from 10-50 mTorr and powers ranging from 100-500 W in the GEC reference cell, modified for inductive (transformer) coupling. Fourier transform infrared (FTIR) spectroscop) is used to observe the absorption features of the CF2 radical in the 1114 cm-1 and 1096 cm-1 spectral regions. The FTIR spectrometer is equipped with a high-sensitivity mercury cadmium telluride (MCT) detector and has afixed resolution of 0.125 cm- 1. The CF2 concentrations are measured for a range of operating pressures and discharge power levels, and are compared to measurements of the relative CF2 concentrations made by mass spectrometry using the method of appearance potential for radical selectivity.

Influence of laboratory degradation methods and bonding application parameters on microTBS of self-etch adhesives to dentin.

PubMed

Erhardt, Maria Carolina G; Pisani-Proença, Jatyr; Osorio, Estrella; Aguilera, Fátima S; Toledano, Manuel; Osorio, Raquel

2011-04-01

To evaluate the laboratory resistance to degradation and the use of different bonding treatments on resin-dentin bonds formed with three self-etching adhesive systems. Flat, mid-coronal dentin surfaces from extracted human molars were bonded according to manufacturer's directions and submitted to two challenging regimens: (A) chemical degradation with 10% NaOC1 immersion for 5 hours; and (B) fatigue loading at 90 N using 50,000 cycles at 3.0 Hz. Additional dentin surfaces were bonded following four different bonding application protocols: (1) according to manufacturer's directions; (2) acid-etched with 36% phosphoric acid (H3PO4) for 15 seconds; (3) 10% sodium hypochlorite (NaOClaq) treated for 2 minutes, after H3PO4-etching; and (4) doubling the application time of the adhesives. Two one-step self-etch adhesives (an acetone-based: Futurabond/FUT and an ethanol-based: Futurabond NR/FNR) and a two-step self-etch primer system (Clearfil SE Bond/CSE) were examined. Specimens were sectioned into beams and tested for microtensile bond strength (microTBS). Selected debonded specimens were observed under scanning electron microscopy (SEM). Data (MPa) were analyzed by ANOVA and multiple comparisons tests (alpha= 0.05). microTBS significantly decreased after chemical and mechanical challenges (P< 0.05). CSE showed higher microTBS than the other adhesive systems, regardless the bonding protocol. FUT attained the highest microTBS after doubling the application time. H3PO4 and H3PO4 + NaOCl pretreatments significantly decreased bonding efficacy of the adhesives.

Etch challenges for DSA implementation in CMOS via patterning

NASA Astrophysics Data System (ADS)

Pimenta Barros, P.; Barnola, S.; Gharbi, A.; Argoud, M.; Servin, I.; Tiron, R.; Chevalier, X.; Navarro, C.; Nicolet, C.; Lapeyre, C.; Monget, C.; Martinez, E.

2014-03-01

This paper reports on the etch challenges to overcome for the implementation of PS-b-PMMA block copolymer's Directed Self-Assembly (DSA) in CMOS via patterning level. Our process is based on a graphoepitaxy approach, employing an industrial PS-b-PMMA block copolymer (BCP) from Arkema with a cylindrical morphology. The process consists in the following steps: a) DSA of block copolymers inside guiding patterns, b) PMMA removal, c) brush layer opening and finally d) PS pattern transfer into typical MEOL or BEOL stacks. All results presented here have been performed on the DSA Leti's 300mm pilot line. The first etch challenge to overcome for BCP transfer involves in removing all PMMA selectively to PS block. In our process baseline, an acetic acid treatment is carried out to develop PMMA domains. However, this wet development has shown some limitations in terms of resists compatibility and will not be appropriated for lamellar BCPs. That is why we also investigate the possibility to remove PMMA by only dry etching. In this work the potential of a dry PMMA removal by using CO based chemistries is shown and compared to wet development. The advantages and limitations of each approach are reported. The second crucial step is the etching of brush layer (PS-r-PMMA) through a PS mask. We have optimized this step in order to preserve the PS patterns in terms of CD, holes features and film thickness. Several integrations flow with complex stacks are explored for contact shrinking by DSA. A study of CD uniformity has been addressed to evaluate the capabilities of DSA approach after graphoepitaxy and after etching.

Process technologies of MPACVD planar waveguide devices and fiber attachment

NASA Astrophysics Data System (ADS)

Li, Cheng-Chung; Qian, Fan; Boudreau, Robert A.; Rowlette, John R., Sr.; Bowen, Terry P.

1999-03-01

Optical circuits based on low-loss glass waveguide on silicon are a practical and promising approach to integrate different functional components. Fiber attachment to planar waveguide provides a practical application for optical communications. Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) produces superior quality, low birefringence, low-loss, planar waveguides for integrated optical devices. Microwave plasma initiates the chemical vapor of SiCl4, GeCl4 and oxygen. A Ge-doped silica layer is thus deposited with a compatible high growth rate (i.e. 0.4 - 0.5 micrometer/min). Film properties are based on various parameters, such as chemical flow rates, chamber pressure and temperature, power level and injector design. The resultant refractive index can be varied between 1.46 (i.e. pure silica) and 1.60 (i.e. pure germania). Waveguides can be fabricated with any desired refractive index profile. Standard photolithography defines the waveguide pattern on a mask layer. The core layer is removed by plasma dry etch which has been investigated by both reactive ion etch (RIE) and inductively coupled plasma (ICP) etch. Etch rates of 3000 - 4000 angstrom/min have been achieved using ICP compared to typical etch rates of 200 - 300 angstrom/min using conventional RIE. Planar waveguides offer good mode matching to optical fiber. A polished fiber end can be glued to the end facet of waveguide with a very low optical coupling loss. In addition, anisotropic etching of silicon V- grooves provides a passive alignment capability. Epoxy and solder were used to fix the fiber within the guiding groove. Several designs of waveguide-fiber attachment will be discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyongwoon

Microstructural characteristics of the CGHAZ (coarse grained heat affected zone) made of the 2.25Cr-1Mo-V-Ti material for the thermal power plant boiler tube were discussed using the technique of tint etching. To conduct the micro structural characterization, the sample on which CGHAZ was produced by using a high temperature thermal cycle simulator, Gleeble 3500 equipment was used for comparative analyses using the existing Nital etching (ASTM E407-74) and the alkaline etching (ASTM E40785). The latter was used to observe a specific phase. For the microstructure on which the alkaline etching was experimented, the shape of a black strip (Ghost microstructure) inmore » a few microns was observed, which was not observed from the Nital etching. It was found from the phase identifications based EPMA, EBSD and TEM experiments that the image of the black strip in a few microns represented the alpha phase in which C, Cr and Mo became segregated. In addition, it was verified that austenite and M{sub 23}C{sub 6} phase were present around the segregated zone. Based on such results, the mechanism by which the image of the black strip in a few microns was formed at the CGHAZ. In this study, we have investigated the mechanism of the appeared black strip in the CGHAZ. - Highlights: •Ghost microstructure was observed which was not observed from the nital etching. •Ghost microstructure has high concentrations of carbon and molybdenum than matrix. •Schematic illustration proposed of why Ghost microstructure was generated. •Ghost microstructure caused by partial dissolution of M{sub 23}C{sub 6} precipitation.« less

Comparison of microleakage on one composite etched with phosphoric acid or a combination of phosphoric and hydrofluoric acids and bonded with several different systems.

PubMed

Szep, Susanne; Langner, Nicole; Bayer, Silja; Börnichen, Diana; Schulz, Christoph; Gerhardt, Thomas; Schriever, Anette; Becker, Joachim; Heidemann, Detlef

2003-02-01

There are no data available on whether or to what extent hydrofluoric acid affects the marginal integrity of dentin-bonded composite restorations when it is used instead of phosphoric acid in the total-etch technique. This in vitro study examined the etching effects of phosphoric acid versus a combination of phosphoric and hydrofluoric acid by evaluation of microleakage in a composite restoration bonded with different dentin adhesive systems. Extracted teeth (n = 90) containing 2 class II preparations, mesial occlusal (MO) and distal occlusal (DO) standarized (cervical margins in dentin) were perfused with Ringer solution and etched in 1 of 2 ways: with phosphoric acid only or with phosphoric combined with hydrofluoric acid. Different dentin bonding agents were then applied (Etch & Prime 3.0, Optibond Solo, Prime & Bond NT, Scotchbond 1, Syntac Single Component, or Syntac Sprint; (n = 15 for each etching material)). The preparations were restored with a hybrid composite (Herculite XRV) and submitted to 5000 thermocycles (5 degrees C to 55 degrees C) to simulate the in vivo situation. Microleakage was assessed with 2% methylene blue diffusion for 24 hours. Dye penetration was calculated as a percentage of the total length of the gingival margins of the preparation with light microscopy at original magnification x 32. The results were analyzed with the Kruskal-Wallis multiple comparison z-value assay (alpha = .05). Differences in dye penetration were significant, both as a function of the dentin adhesive and the conditioning mode applied. In the specimen groups conditioned with phosphoric acid, Optibond Solo (54% +/- 44%) and Syntac Sprint (74% +/- 39%) demonstrated the lowest penetration values. Higher values were obtained for Prime & Bond NT (81% +/- 34%), Scotchbond 1 (83% +/- 31%), Etch & Prime 3.0 (85% +/- 33%), and Syntac Single Component (95% +/- 16%), with no significant differences (alpha=.05) between specimen groups. The best results were obtained for Syntac Sprint (24% +/- 26% dye penetration) after conditioning with a mixture of phosphoric and hydrofluoric acid. The least favorable result was obtained for Optibond Solo (65% +/- 31%). It was significantly different from Prime & Bond NT (76% +/- 37%), Scotchbond 1 (85% +/- 29%), and Etch & Prime 3.0 (88% +/- 24%). Syntac Single Component (75% +/- 32%) was significantly different from Syntac Sprint. Syntac Single Component and Syntac Sprint exhibited significantly better results when conditioned with a combination of phosphoric acid and hydrofluoric acid than with phosphoric acid only. Within the limitations of this in vitro study, total-etching water-based (Syntac Single Component) and acetone-based (Syntac Sprint) bonding agents with a combination of phosphoric acid and hydrofluoric acid led to significant reductions (alpha=.05) in dye penetration compared to phosphoric acid conditioning only. Ethanol-based dentin bonding agents (Etch & Prime 3.0, Optibond Solo, and Scotchbond 1) were not significantly influenced by the type of conditioner used.

A novel, highly efficient cavity backshort design for far-infrared TES detectors

NASA Astrophysics Data System (ADS)

Bracken, C.; de Lange, G.; Audley, M. D.; Trappe, N.; Murphy, J. A.; Gradziel, M.; Vreeling, W.-J.; Watson, D.

2018-03-01

In this paper we present a new cavity backshort design for TES (transition edge sensor) detectors which will provide increased coupling of the incoming astronomical signal to the detectors. The increased coupling results from the improved geometry of the cavities, where the geometry is a consequence of the proposed chemical etching manufacturing technique. Using a number of modelling techniques, predicted results of the performance of the cavities for frequencies of 4.3-10 THz are presented and compared to more standard cavity designs. Excellent optical efficiency is demonstrated, with improved response flatness across the band. In order to verify the simulated results, a scaled model cavity was built for testing at the lower W-band frequencies (75-100 GHz) with a VNA system. Further testing of the scale model at THz frequencies was carried out using a globar and bolometer via an FTS measurement set-up. The experimental results are presented, and compared to the simulations. Although there is relatively poor comparison between simulation and measurement at some frequencies, the discrepancies are explained by means of higher-mode excitation in the measured cavity which are not accounted for in the single-mode simulations. To verify this assumption, a better behaved cylindrical cavity is simulated and measured, where excellent agreement is demonstrated in those results. It can be concluded that both the simulations and the supporting measurements give confidence that this novel cavity design will indeed provide much-improved optical coupling for TES detectors in the far-infrared/THz band.

Responsivity boosting in FIR TiN LEKIDs using phonon recycling: simulations and array design

NASA Astrophysics Data System (ADS)

Fyhrie, Adalyn; McKenney, Christopher; Glenn, Jason; LeDuc, Henry G.; Gao, Jiansong; Day, Peter; Zmuidzinas, Jonas

2016-07-01

To characterize further the cosmic star formation history at high redshifts, a large-area survey by a cryogenic 4-6 meter class telescope with a focal plane populated by tens of thousands of far-infrared (FIR, 30-300 μm) detectors with broadband detector noise equivalent powers (NEPs) on the order of 3×10-9 W/√ Hz is needed. Ideal detectors for such a surveyor do not yet exist. As a demonstration of one technique for approaching the ultra-low NEPs required by this surveyor, we present the design of an array of 96 350 µm KIDs that utilize phonon recycling to boost responsivity. Our KID array is fabricated with TiN deposited on a silicon-on-insulator (SOI) wafer, which is a 2 μm thick layer of silicon bonded to a thicker slab of silicon by a thin oxide layer. The backside thick slab is etched away underneath the absorbers so that the inductors are suspended on just the 2 μm membrane. The intent is that quasiparticle recombination phonons are trapped in the thin membrane, thereby increasing their likelihood of being re-absorbed by the KID to break additional Cooper pairs and boost responsivity. We also present a Monte-Carlo simulation that predicts the amount of signal boost expected from phonon recycling given different detector geometries and illumination strategies. For our current array geometry, the simulation predicts a measurable 50% boost in responsivity.

Gamma and fast neutron radiation monitoring inside spent reactor fuel assemblies

NASA Astrophysics Data System (ADS)

Lakosi, L.; Tam Nguyen, C.

2007-09-01

Gamma and neutron signatures of spent reactor fuel were monitored by small-size silicon diode and track etch detectors, respectively, in a nuclear power plant (NPP). These signatures, reflecting gross gamma intensity and the 242,244Cm content, contain information on the burn-up (BU) and cooling time (CT) of the fuel. The small size of the detectors allows close access to inside parts of the assemblies out of reach of other methods. A commercial Si diode was encapsulated in a cylindrical steel case and was used for gross γ monitoring. CR-39 detectors were used for neutron measurements. Irradiation exposures at the NPP were implemented in the central dosimetric channel of spent fuel assemblies (SFAs) stored in borated water. Gross γ and neutron axial profiles were taken up by scanning with the aid of a long steel guide tube, lowered down to the spent fuel pond by crane and fitted to the headpiece of the fuel assemblies. Gamma measurements were performed using a long cable introduced in this tube, with the Si diode at the end. A long steel wire was also led through the guide tube, to which a chain of 15 sample holder capsules was attached, each containing a track detector. Gamma dose rates of 0.1-10 kGy h -1, while neutron fluxes in a range of (0.25-26) 10 4 cm -2 s -1 were recorded. The results are in good correlation with those of a calculation for spent fuel neutron yield.

Acid Solutions for Etching Corrosion-Resistant Metals

NASA Technical Reports Server (NTRS)

Simmons, J. R.

1982-01-01

New study characterized solutions for etching austenitic stainless steels, nickel-base alloys, and titanium alloys (annealed). Solutions recommended for use remove at least 0.4 mil of metal from surface in less than an hour. Solutions do not cause intergranular attack on metals for which they are effective, when used under specified conditions.

CUORE: The Three Towers Test

NASA Astrophysics Data System (ADS)

Goodsell, Alison; Sparks, Laura

2008-10-01

CUORE (Cryogenic Underground Observatory for Rare Events) will be part of the next generation of detectors used to search for neutrinoless double beta decay (0νββ). Located in Assergi, Italy at the Gran Sasso National Laboratory (LNGS), CUORE will be a large cryogenic bolometer composed of 988 tellurium dioxide (TeO2) detectors with a total mass of 750 kg, and will search for 0νββ in ^130Te. The intermediate upgrade, CUORE-0, first involves the disassembly of Cuoricino, CUORE's smaller counterpart in operation since 2003, and the readying of the Three Towers test, a diagnostic detector configuration. As the experiment will monitor the extremely rare event of 0νββ, all factors contributing to background need to be minimized to effectively increase the sensitivity. We assisted the LNGS researchers over the summer of 2008 by supporting R&D work with the Three Towers test to reduce the radioactive background of the experiment. Activities involved decontaminating the copper frame of radon daughters, and chemically etching and lapping the TeO2 crystals with nitric acid and silicon dioxide, respectively, to remove surface contaminants which contribute to background counts. This work was supported in part by NSF grant PHY- 0653284 and the California State Faculty Support Grant.

In-cell overlay metrology by using optical metrology tool

NASA Astrophysics Data System (ADS)

Lee, Honggoo; Han, Sangjun; Hong, Minhyung; Kim, Seungyoung; Lee, Jieun; Lee, DongYoung; Oh, Eungryong; Choi, Ahlin; Park, Hyowon; Liang, Waley; Choi, DongSub; Kim, Nakyoon; Lee, Jeongpyo; Pandev, Stilian; Jeon, Sanghuck; Robinson, John C.

2018-03-01

Overlay is one of the most critical process control steps of semiconductor manufacturing technology. A typical advanced scheme includes an overlay feedback loop based on after litho optical imaging overlay metrology on scribeline targets. The after litho control loop typically involves high frequency sampling: every lot or nearly every lot. An after etch overlay metrology step is often included, at a lower sampling frequency, in order to characterize and compensate for bias. The after etch metrology step often involves CD-SEM metrology, in this case in-cell and ondevice. This work explores an alternative approach using spectroscopic ellipsometry (SE) metrology and a machine learning analysis technique. Advanced 1x nm DRAM wafers were prepared, including both nominal (POR) wafers with mean overlay offsets, as well as DOE wafers with intentional across wafer overlay modulation. After litho metrology was measured using optical imaging metrology, as well as after etch metrology using both SE and CD-SEM for comparison. We investigate 2 types of machine learning techniques with SE data: model-less and model-based, showing excellent performance for after etch in-cell on-device overlay metrology.

Development of a Post-CMOS Compatible Nanoporous Thin Film layer Based on Al2O3

NASA Astrophysics Data System (ADS)

Dogan, Ö.; Buschhausen, A.; Walk, C.; Mokwa, W.; Vogt, H.

2018-05-01

Porous alumina is a popular material with numerous application fields. A post-CMOS compatible process chain for the fabrication of nanoporous surface based on Al2O3 by atomic layer deposition (ALD) is presented. By alternately applying small numbers of ALD cycles for Al2O3 and ZnO, a homogenous composite was accomplished, for which the principle of island growth of ALD materials at few deposition cycle numbers was utilised. By selective texture-etching of ZnO content via hydrofluoric acid (HF) in vaporous phase at 40 °C and 10.67 mbar, a porous surface of the etch resistant Al2O3 could be achieved. TOF-SIMS investigations verified the composition of ALD composite, whereas AFM and high resolution SEM images characterised the topographies of pre- and post-etched samples. Pores with opening diameters of up to 15 nm could be detected on the surface after vaporous HF treatment for 2 minutes. The amount of pores increased after an etching time of 5 minutes.

Highly sensitive on-site detection of glucose in human urine with naked eye based on enzymatic-like reaction mediated etching of gold nanorods.

PubMed

Zhang, Zhiyang; Chen, Zhaopeng; Cheng, Fangbin; Zhang, Yaowen; Chen, Lingxin

2017-03-15

Based on enzymatic-like reaction mediated etching of gold nanorods (GNRs), an ultrasensitive visual method was developed for on-site detection of urine glucose. With the catalysis of MoO 4 2 - , GNRs were efficiently etched by H 2 O 2 which was generated by glucose-glucose oxidase enzymatic reaction. The etching of GNRs lead to a blue-shift of logitudinal localized surface plasmon resonance of GNRs, accompanied by an obvious color change from blue to red. The peak-shift and the color change can be used for detection of glucose by the spectrophotometer and the naked eyes. Under optimal condition, an excellent sensitivity toward glucose is obtained with a detection limit of 0.1μM and a visual detection limit of 3μM in buffer solution. Benefiting from the high sensitivity, the successful colorimetric detection of glucose in original urine samples was achieved, which indicates the practical applicability to the on-site determination of urine glucose. Copyright © 2016 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

NASA Astrophysics Data System (ADS)

Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

2016-11-01

We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

PubMed

Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

2014-07-14

We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

Effect of the calcium silicate-based sealer removal protocols and time-point of acid etching on the dentin adhesive interface.

PubMed

Morais, Jéssika Mayhara Pereira; Victorino, Keli Regina; Escalante-Otárola, Wilfredo Gustavo; Jordão-Basso, Keren Cristina Fagundes; Palma-Dibb, Regina Guenka; Kuga, Milton Carlos

2018-06-15

The aim of the study was to evaluate the effects when acid etching on the dentin surface was immediately performed (I) or 7 days (D) after calcium silicate-based sealer (MTA Fillapex) removal, using 95% ethanol (E) or xylol (X). First study, 60 bovine incisor dentin specimens were impregnated with sealer and divided into six groups (n = 10): (EI), E + I; (XI), X + I; (ED), E + D; (XD), X + D, (UN), untreated and (MR), mechanical removal of sealer. Scanning electron microscopy (SEM) images (500×) were obtained from each specimen and scores assessed the sealer residues persistence. Second study, 60 specimens were similarly treated; however, the specimens were restored with composite resin after the removal protocols. Hybrid layer formation was evaluated using confocal laser microscopy (1,024×). Third study, 60 specimens were similarly obtained and subjected to micro-shear test to evaluate the effects of removal protocols on the bond strength of etch-and- rinse adhesive system to dentin. XI showed the highest persistence of sealer residues (p < .05), similar to MR (p > .05). EI showed the greatest hybrid layer extension, except in relation to UN (p < .05). XI and MR presented the lowest bond strength adhesive system to dentin (p < .05). Acid etching immediately after calcium silicate-based endodontic sealer removal using xylol presented the highest residues persistence and negatively affected the adhesive interface between dentin and etch-and-rinse adhesive system. © 2018 Wiley Periodicals, Inc.

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Kim, Hyeongnam; Nath, Digbijoy; Rajan, Siddharth; Lu, Wu

2013-01-01

Polarization-engineered Ga-face GaN-based heterostructures with a GaN cap layer and an AlGaN/ p-GaN back barrier have been designed for normally-off field-effect transistors (FETs). The simulation results show that an unintentionally doped GaN cap and p-GaN layer in the buffer primarily deplete electrons in the channel and the Al0.2Ga0.8N back barrier helps to pinch off the channel. Experimentally, we have demonstrated a normally-off GaN-based field-effect transistor on the designed GaN cap/Al0.3Ga0.7N/GaN channel/Al0.2Ga0.8N/ p-GaN/GaN heterostructure. A positive threshold voltage of 0.2 V and maximum transconductance of 2.6 mS/mm were achieved for 80- μm-long gate devices. The device fabrication process does not require a dry etching process for gate recessing, while highly selective etching of the GaN cap against a very thin Al0.3GaN0.7N top barrier has to be performed to create a two-dimensional electron gas for both the ohmic and access regions. A self-aligned, selective etch of the GaN cap in the access region is introduced, using the gate metal as an etch mask. The absence of gate recess etching is promising for uniform and repeatable threshold voltage control in normally-off AlGaN/GaN heterostructure FETs for power switching applications.

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

PubMed

Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

2013-08-14

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

High-Frequency (>50 MHz) Medical Ultrasound Linear Arrays Fabricated From Micromachined Bulk PZT Materials

PubMed Central

Liu, Changgeng; Zhou, Qifa; Djuth, Frank T.; Shung, K. Kirk

2012-01-01

This paper describes the development and characterization of a high-frequency (65-MHz) ultrasound transducer linear array. The array was built from bulk PZT which was etched using an optimized chlorine-based plasma dry-etching process. The median etch rate of 8 μm/h yielded a good profile (wall) angle (>83°) and a reasonable processing time for etch depths up to 40 μm (which corresponds to a 50-MHz transducer). A backing layer with an acoustic impedance of 6 MRayl and a front-end polymer matching layer yielded a transducer bandwidth of 40%. The major parameters of the transducer have been characterized. The two-way insertion loss and crosstalk between adjacent channels at the center frequency are 26.5 and −25 dB, respectively. PMID:24626041

Deeply-etched micromirror with vertical slit and metallic coating enabling transmission-type optical MEMS filters

NASA Astrophysics Data System (ADS)

Othman, Muhammad A.; Sabry, Yasser M.; Sadek, Mohamed; Nassar, Ismail M.; Khalil, Diaa A.

2016-03-01

In this work we report a novel optical MEMS deeply-etched mirror with metallic coating and vertical slot, where the later allows reflection and transmission by the micromirror. The micromirror as well as fiber grooves are fabricated using deep reactive ion etching technology, where the optical axis is in-plane and the components are self-aligned. The etching depth is 150 μm chosen to improve the micromirror optical throughput. The vertical optical structure is Al metal coated using the shadow mask technique. A fiber-coupled Fabry-Pérot filter is successfully realized using the fabricated structure. Experimental measurements were obtained based on a dielectric-coated optical fiber inserted into a fiber groove facing the slotted micromirror. A versatile performance in terms of the free spectral range and 3-dB bandwidth is achieved.

Selective Plasma Etching of Polymeric Substrates for Advanced Applications

PubMed Central

Puliyalil, Harinarayanan; Cvelbar, Uroš

2016-01-01

In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance. PMID:28335238

Method of fabricating a scalable nanoporous membrane filter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tringe, Joseph W; Balhorn, Rodney L; Zaidi, Saleem

A method of fabricating a nanoporous membrane filter having a uniform array of nanopores etch-formed in a thin film structure (e.g. (100)-oriented single crystal silicon) having a predetermined thickness, by (a) using interferometric lithography to create an etch pattern comprising a plurality array of unit patterns having a predetermined width/diameter, (b) using the etch pattern to etch frustum-shaped cavities or pits in the thin film structure such that the dimension of the frustum floors of the cavities are substantially equal to a desired pore size based on the predetermined thickness of the thin film structure and the predetermined width/diameter ofmore » the unit patterns, and (c) removing the frustum floors at a boundary plane of the thin film structure to expose, open, and thereby create the nanopores substantially having the desired pore size.« less

Oxygen plasma etching of graphene: A first-principles dynamical inspection of the reaction mechanisms and related activation barriers

NASA Astrophysics Data System (ADS)

Koizumi, Kenichi; Boero, Mauro; Shigeta, Yasuteru; Oshiyama, Atsushi; Dept. of Applied Physics Team; Institute of Physics and Chemistry of Strasbourg (IPCMS) Collaboration; Department Of Materials Engineering Science Collaboration

2013-03-01

Oxygen plasma etching is a crucial step in the fabrication of electronic circuits and has recently received a renovated interest in view of the realization of carbon-based nanodevices. In an attempt at unraveling the atomic-scale details and to provide guidelines for the control of the etching processes mechanisms, we inspected the possible reaction pathways via reactive first principles simulations. These processes involve breaking and formation of several chemical bonds and are characterized by different free-energy barriers. Free-energy sampling techniques (metadynamics and blue moon), used to enhance the standard Car-Parrinello molecular dynamics, provide us a detailed microscopic picture of the etching of graphene surfaces and a comprehensive scenario of the activation barriers involved in the various steps. MEXT, Japan - contract N. 22104005

Defect-free fabrication of nano-disk and nano-wire by fusion of bio-template and neutral beam etching

NASA Astrophysics Data System (ADS)

Samukawa, S.; Noda, Shuichi; Higo, Akio; Yasuda, Manabu; Wada, Kazumi

2016-11-01

We have developed an innovated fabrication technology of Si, GaAs, and Ge nano-structures, i.e., we called defect-free neutral beam etching. The technology has been successfully applied to prototype the quantum nano-disks and nano-wires with ferritin based bio-templates. SEM observation verifies that the designed structures are prototyped. Photoluminescence measurements demonstrates high optical quality of nano-structures based on the technology.

Plant-Mimetic Heat Pipes for Operation with Large Inertial and Gravitation Stresses

DTIC Science & Technology

2012-08-16

tensiometer based on the integration of the membrane with a MEMS-based pressure sen heat transfer, biomimicry , microfluidics, plant science U U U U...stable at each tension. Inset shows an optical micrograph of 25 cavities; dark cavities are filled and bright cavities are empty (cavitated). (C... Optical micrograph of a silicon membrane that has been anodically etched from the top to form nano- porous silicon and wet etched from the bottom to

Geopolymerisation of fly ashes with waste aluminium anodising etching solutions.

PubMed

Ogundiran, M B; Nugteren, H W; Witkamp, G J

2016-10-01

Combined management of coal combustion fly ash and waste aluminium anodising etching solutions using geopolymerisation presents economic and environmental benefits. The possibility of using waste aluminium anodising etching solution (AES) as activator to produce fly ash geopolymers in place of the commonly used silicate solutions was explored in this study. Geopolymerisation capacities of five European fly ashes with AES and the leaching of elements from their corresponding geopolymers were studied. Conventional commercial potassium silicate activator-based geopolymers were used as a reference. The geopolymers produced were subjected to physical, mechanical and leaching tests. The leaching of elements was tested on 28 days cured and crushed geopolymers using NEN 12457-4, NEN 7375, SPLP and TCLP leaching tests. After 28 days ambient curing, the geopolymers based on the etching solution activator showed compressive strength values between 51 and 84 MPa, whereas the commercial potassium silicate based geopolymers gave compressive strength values between 89 and 115 MPa. Based on the regulatory limits currently associated with the used leaching tests, all except one of the produced geopolymers (with above threshold leaching of As and Se) passed the recommended limits. The AES-geopolymer geopolymers demonstrated excellent compressive strength, although less than geopolymers made from commercial activator. Additionally, they demonstrated low element leaching potentials and therefore can be suitable for use in construction works. Copyright © 2016. Published by Elsevier Ltd.

Influence of phosphoproteins' biomimetic analogs on remineralization of mineral-depleted resin-dentin interfaces created with ion-releasing resin-based systems.

PubMed

Sauro, Salvatore; Osorio, Raquel; Watson, Timothy F; Toledano, Manuel

2015-07-01

The study aimed at evaluating the remineralization of acid-etched dentin pre-treated with primers containing biomimetic analogs and bonded using an ion-releasing light-curable resin-based material. An experimental etch-and-rinse adhesive system filled with Ca(2+), PO4(3-)-releasing Ca-Silicate micro-fillers was created along with two experimental primers containing biomimetic analogs such as sodium trimetaphosphate (TMP) and/or polyaspartic acid (PLA). Dentin specimens etched with 37% H3PO4 were pre-treated with two different aqueous primers containing the polyanionic biomimetic analogs or deionized water and subsequently bonded using the experimental resin-based materials. The specimens were sectioned and analyzed by AFM/nanoindentation to evaluate changes in the modulus of elasticity (Ei) across the resin-dentin interface at different AS storage periods (up to 90 days). Raman cluster analysis was also performed to evaluate the chemical changes along the interface. The phosphate uptake by the acid-etched dentin was evaluated using the ATR-FTIR. Additional resin-dentin specimens were tested for microtensile bond strength. SEM examination was performed after de-bonding, while confocal laser microscopy was used to evaluate the interfaces ultramorphology and micropermeability. Both biomimetic primers induced phosphate uptake by acid-etched dentin. Specimens created with the ion-releasing resin in combination with the pre-treatment primers containing either PLA and TMA showed the greatest recovery of the Ei of the hybrid layer, with no decrease in μTBS (p>0.05) after 3-month AS storage. The ion-releasing resin applied after use of the biomimetic primers showed the greatest reduction in micropermeability due to mineral precipitation; these results were confirmed using SEM. The use of the ion-releasing resin-based system applied to acid-etched dentin pre-treated with biomimetic primers containing analogs of phosphoproteins such as poly-l-aspartic acid and/or sodium trimetaphosphate provides a suitable bonding approach for biomimetic remineralization of resin-dentin interfaces. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Microfluidic-based photocatalytic microreactor for environmental application: a review of fabrication substrates and techniques, and operating parameters.

PubMed

Das, Susmita; Srivastava, Vimal Chandra

2016-06-08

Photochemical technology with microfluidics is emerging as a new platform in environmental science. Microfluidic technology has various advantages, like better mixing and a shorter diffusion distance for the reactants and products; and uniform distribution of light on the photocatalyst. Depending on the material type and related applications, several fabrication techniques have been adopted by various researchers. Microreactors have been prepared by various techniques, such as lithography, etching, mechanical microcutting technology, etc. Lithography can be classified into photolithography, soft lithography and X-ray lithography techniques whereas the etching process is divided into wet etching (chemical etching) and dry etching (plasma etching) techniques. Several substrates, like polymers, such as polydimethyl-siloxane (PDMS), polymethyle-methacrylate (PMMA), hydrogel, etc.; metals, such as stainless steel, titanium foil, etc.; glass, such as silica capillary, glass slide, etc.; and ceramics have been used for microchannel fabrication. During degradation in a microreactor, the degradation efficiency is affected by few important parameters such as flow rate, initial concentration of the target compound, microreactor dimensions, light intensity, photocatalyst structure and catalyst support. The present paper discusses and critically reviews fabrication techniques and substrates used for microchannel fabrication and critical operating parameters for organics, especially dye degradation in the microreactor. The kinetics of degradation has also been discussed.

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

NASA Astrophysics Data System (ADS)

Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

2016-03-01

With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawakami, Masatoshi; Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu

2016-07-15

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change inmore » the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.« less

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, G. R.; Gordon, N. T.; Hall, D. J.; Ashby, M. K.; Little, J. C.; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, M. T.; Ashley, T.

2004-01-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas sensing; radiation shielding for, and non-uniformity correction of, high sensitivity staring infrared detectors; and dynamic infrared scene projection. Similarly, infrared (IR) detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We present results on negative luminescence in the mid- and long-IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1 cm×1 cm. We also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high-performance imaging is anticipated from systems which require no mechanical cooling.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, Geoff R.; Gordon, Neil T.; Hall, David J.; Little, J. Chris; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, Martin T.; Ashley, Tim

2004-02-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source" of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very higher performance imaging is anticipated from systems which require no mechanical cooling.

Infrared Negative Luminescent Devices and Higher Operating Temperature Detectors

NASA Astrophysics Data System (ADS)

Ashley, Tim

2003-03-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a source' of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high performance imaging is anticipated from systems which require no mechanical cooling.

Fabrication of 3D surface structures using grayscale lithography

NASA Astrophysics Data System (ADS)

Stilson, Christopher; Pal, Rajan; Coutu, Ronald A.

2014-03-01

The ability to design and develop 3D microstructures is important for microelectromechanical systems (MEMS) fabrication. Previous techniques used to create 3D devices included tedious steps in direct writing and aligning patterns onto a substrate followed by multiple photolithography steps using expensive, customized equipment. Additionally, these techniques restricted batch processing and placed limits on achievable shapes. Gray-scale lithography enables the fabrication of a variety of shapes using a single photolithography step followed by reactive ion etching (RIE). Micromachining 3D silicon structures for MEMS can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we investigated: using MATLAB for mask designs; feasibility of using 1 μm Heidelberg mask maker to direct write patterns onto photoresist; using RIE processing to etch patterns into a silicon substrate; and the ability to tailor etch selectivity for precise fabrication. To determine etch rates and to obtain desired etch selectivity, parameters such as gas mixture, gas flow, and electrode power were studied. This process successfully demonstrates the ability to use gray-scale lithography and RIE for use in the study of micro-contacts. These results were used to produce a known engineered non-planer surface for testing micro-contacts. Surface structures are between 5 μm and 20 μm wide with varying depths and slopes based on mask design and etch rate selectivity. The engineered surfaces will provide more insight into contact geometries and failure modes of fixed-fixed micro-contacts.

Catalytically-etched hexagonal boron nitride flakes and their surface activity

NASA Astrophysics Data System (ADS)

Kim, Do-Hyun; Lee, Minwoo; Ye, Bora; Jang, Ho-Kyun; Kim, Gyu Tae; Lee, Dong-Jin; Kim, Eok-Soo; Kim, Hong Dae

2017-04-01

Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co3O4, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co3O4 and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Fabrication and Characterization of All-Polystyrene Microfluidic Devices with Integrated Electrodes and Tubing.

PubMed

Pentecost, Amber M; Martin, R Scott

2015-01-01

A new method of fabricating all-polystyrene devices with integrated electrodes and fluidic tubing is described. As opposed to expensive polystyrene (PS) fabrication techniques that use hot embossing and bonding with a heated lab press, this approach involves solvent-based etching of channels and lamination-based bonding of a PS cover, all of which do not need to occur in a clean room. PS has been studied as an alternative microchip substrate to PDMS, as it is more hydrophilic, biologically compatible in terms of cell adhesion, and less prone to absorption of hydrophobic molecules. The etching/lamination-based method described here results in a variety of all-PS devices, with or without electrodes and tubing. To characterize the devices, micrographs of etched channels (straight and intersected channels) were taken using confocal and scanning electron microscopy. Microchip-based electrophoresis with repetitive injections of fluorescein was conducted using a three-sided PS (etched pinched, twin-tee channel) and one-sided PDMS device. Microchip-based flow injection analysis, with dopamine and NO as analytes, was used to characterize the performance of all-PS devices with embedded tubing and electrodes. Limits of detection for dopamine and NO were 130 nM and 1.8 μM, respectively. Cell immobilization studies were also conducted to assess all-PS devices for cellular analysis. This paper demonstrates that these easy to fabricate devices can be attractive alternative to other PS fabrication methods for a wide variety of analytical and cell culture applications.

The improvement of adhesive properties of PEEK through different pre-treatments

NASA Astrophysics Data System (ADS)

Hallmann, Lubica; Mehl, Albert; Sereno, Nuno; Hämmerle, Christoph H. F.

2012-07-01

The purpose of this in vitro study was the evaluation of the bond strength of the adhesives/composite resin to Poly Ether Ether Ketone (PEEK) based dental polymer after using different surface conditioning methods. PEEK blanks were cut into discs. All disc specimens were polished with 800 grit SiC paper and divided into 6 main groups. Main groups were divided into 2 subgroups. The main groups of 32 specimens each were treated as follow: (1) control specimens (no treatment), (2) piranha solution etching, (3) abraded with 50 μm alumina particles and chemical etching, (4) abraded with 110 μm alumina particles and chemical etching, (5) abraded with 30 μm silica-coated alumina particles and chemical etching, (6) abraded with 110 μm silica-coated alumina particles and chemical etching. Plexiglas tubes filled with a composite resin (RelyX Unicem) were bonded to the specimens. The adhesives used were Heliobond and Clearfil Ceramic Primer. Each specimen was stored in distilled water (37 °C) for 3 days. Tensile bond strength was measured in a universal testing machine and failure methods were evaluated. Abraded surface with 50 μm alumina particles followed by etching with piranha solution lead to the highest bond strength of 21.4 MPa when Heliobond like adhesive was used. Tribochemical silica coated/etched PEEK surfaces did not have an effect on the bond strength. Non-treated PEEK surface was not able to establish a bond with composite resin. The proper choice of adhesive/composite resin system leads to a strong bond. ConclusionAirborne particle abrasion in combination with piranha solution etching improves the adhesive properties of PEEK.

Optimization of surface morphology and scattering properties of TCO/AIT textured glass front electrode for thin film solar cells

NASA Astrophysics Data System (ADS)

Addonizio, M. L.; Fusco, L.; Antonaia, A.; Cominale, F.; Usatii, I.

2015-12-01

Aluminium induced texture (AIT) method has been used for obtaining highly textured glass substrate suitable for silicon based thin film solar cell technology. Wet etch step parameters of AIT process have been varied and effect of different etchants and different etching times on morphological and optical properties has been analyzed. The resulting morphology features (shape, size distribution, inclination angle) have been optimized in order to obtain the best scattering properties. ZnO:Ga (GZO) films have been deposited by sputtering technique on AIT-processed glass. Two different ZnO surface morphologies have been obtained, strongly depending on the underlying glass substrate morphology induced by different etching times. Very rough and porous texture (σrms ∼ 150 nm) was obtained on glass etched 2 min showing cauliflower-like structure, whereas a softer texture (σrms ∼ 78 nm) was obtained on glass etched 7 min giving wider and smoother U-shaped craters. The effect of different glass textures on optical confinement has been tested in amorphous silicon based p-i-n devices. Devices fabricated on GZO/high textured glass showed a quantum efficiency enhancement due to both an effective light trapping phenomenon and an effective anti-reflective optical behaviour. Short etching time produce smaller cavities (<1 μm) with deep U-shape characterized by high roughness, high inclination angle and low autocorrelation length. This surface morphology promoted a large light scattering phenomenon, as evidenced by haze value and by angular resolved scattering (ARS) behaviour, into a large range of diffraction angles, giving high probability of effective light trapping inside a PV device.

The chemistry screening for ultra low-k dielectrics plasma etching

NASA Astrophysics Data System (ADS)

Zotovich, A.; Krishtab, M.; Lazzarino, F.; Baklanov, M. R.

2014-12-01

Nowadays, some of the important problems in microelectronics technological node scaling down are related to interconnect delay, dynamic power consumption and crosstalk. This compels introduction and integration of new materials with low dielectric permittivity (low-k materials) as insulator in interconnects. One of such materials under consideration for sub 10 nm technology node is a spin-coated organosilicate glass layer with ordered porosity (37-40%) and a k-value of 2.2 (OSG 2.2). High porosity leads to significant challenges during the integration and one of them is a material degradation during the plasma etching. The low-k samples have been etched in a CCP double frequency plasma chamber from TEL. Standard recipes developed for microporous materials with k<2.5 and based on mixture of C4F8 and CF4 with N2, O2 and Ar were found significantly damaging for high-porous ULK materials. The standard etch recipe was compared with oxygen free etch chemistries based on mixture CF4 with CH2F2 and Ar assuming that the presence of oxygen in the first recipe will have significant negative impact in high porous ULK materials. The film damage has been analyzed using FTIR spectroscopy and the k-value has been extracted by capacitance CV-measurements. There was indirectly shown that vacuum ultraviolet photons cause the main damage of low-k, whereas radicals and ions are not so harmful. Trench structures have been etched in low-k film and cross-SEM analysis with and without HF dipping has been performed to reveal patterning capability and visualize the sidewall damage and. The bottom roughness was analyzed by AFM.

Bio-inspired silicon nanospikes fabricated by metal-assisted chemical etching for antibacterial surfaces

NASA Astrophysics Data System (ADS)

Hu, Huan; Siu, Vince S.; Gifford, Stacey M.; Kim, Sungcheol; Lu, Minhua; Meyer, Pablo; Stolovitzky, Gustavo A.

2017-12-01

The recently discovered bactericidal properties of nanostructures on wings of insects such as cicadas and dragonflies have inspired the development of similar nanostructured surfaces for antibacterial applications. Since most antibacterial applications require nanostructures covering a considerable amount of area, a practical fabrication method needs to be cost-effective and scalable. However, most reported nanofabrication methods require either expensive equipment or a high temperature process, limiting cost efficiency and scalability. Here, we report a simple, fast, low-cost, and scalable antibacterial surface nanofabrication methodology. Our method is based on metal-assisted chemical etching that only requires etching a single crystal silicon substrate in a mixture of silver nitrate and hydrofluoric acid for several minutes. We experimentally studied the effects of etching time on the morphology of the silicon nanospikes and the bactericidal properties of the resulting surface. We discovered that 6 minutes of etching results in a surface containing silicon nanospikes with optimal geometry. The bactericidal properties of the silicon nanospikes were supported by bacterial plating results, fluorescence images, and scanning electron microscopy images.

Correlation between oxidant concentrations, morphological aspects and etching kinetics of silicon nanowires during silver-assist electroless etching

NASA Astrophysics Data System (ADS)

Moumni, Besma; Jaballah, Abdelkader Ben

2017-12-01

Silicon porosification by silver assisted chemical etching (Ag-ACE) for a short range of H2O2 concentration is reported. We experimentally show that porous silicon (PSi) is obtained for 1% H2O2, whereas silicon nanowires (SiNWs) appeared by simply tuning the concentration of H2O2 to relatively high concentrations up to 8%. The morphological aspects are claimed by scanning electron microscopy proving that the kinetics of SiNWs formation display nonlinear relationships versus H2O2 concentration and etching time. A semi-qualitative electrochemical etching model based on local anodic, Ic, and cathodic, Ia, currents is proposed to explain the different morphological changes, and to unveil the formation pathways of both PS and SiNWs. More importantly, an efficient antireflective character for silicon solar cell (reflectance close to 2%) is realized at 8% H2O2. In addition, the luminescence of the prepared Si-nanostructures is claimed by photoluminescence which exhibit a large enhancement of the intensity and a blue shift for narrow and deep SiNWs.

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

NASA Astrophysics Data System (ADS)

Upadhyay, J.; Palczewski, A.; Popović, S.; Valente-Feliciano, A.-M.; Im, Do; Phillips, H. L.; Vušković, L.

2017-12-01

An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity's inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.

PubMed

Ghoneim, Mohamed Tarek; Hussain, Muhammad Mustafa

2017-04-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-resolution x-ray imaging using a structured scintillator.

PubMed

Hormozan, Yashar; Sychugov, Ilya; Linnros, Jan

2016-02-01

In this study, the authors introduce a new generation of finely structured scintillators with a very high spatial resolution (a few micrometers) compared to conventional scintillators, yet maintaining a thick absorbing layer for improved detectivity. Their concept is based on a 2D array of high aspect ratio pores which are fabricated by ICP etching, with spacings (pitches) of a few micrometers, on silicon and oxidation of the pore walls. The pores were subsequently filled by melting of powdered CsI(Tl), as the scintillating agent. In order to couple the secondary emitted photons of the back of the scintillator array to a CCD device, having a larger pixel size than the pore pitch, an open optical microscope with adjustable magnification was designed and implemented. By imaging a sharp edge, the authors were able to calculate the modulation transfer function (MTF) of this finely structured scintillator. The x-ray images of individually resolved pores suggest that they have been almost uniformly filled, and the MTF measurements show the feasibility of a few microns spatial resolution imaging, as set by the scintillator pore size. Compared to existing techniques utilizing CsI needles as a structured scintillator, their results imply an almost sevenfold improvement in resolution. Finally, high resolution images, taken by their detector, are presented. The presented work successfully shows the functionality of their detector concept for high resolution imaging and further fabrication developments are most likely to result in higher quantum efficiencies.

High-resolution x-ray imaging using a structured scintillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hormozan, Yashar, E-mail: hormozan@kth.se; Sychugov, Ilya; Linnros, Jan

2016-02-15

Purpose: In this study, the authors introduce a new generation of finely structured scintillators with a very high spatial resolution (a few micrometers) compared to conventional scintillators, yet maintaining a thick absorbing layer for improved detectivity. Methods: Their concept is based on a 2D array of high aspect ratio pores which are fabricated by ICP etching, with spacings (pitches) of a few micrometers, on silicon and oxidation of the pore walls. The pores were subsequently filled by melting of powdered CsI(Tl), as the scintillating agent. In order to couple the secondary emitted photons of the back of the scintillator arraymore » to a CCD device, having a larger pixel size than the pore pitch, an open optical microscope with adjustable magnification was designed and implemented. By imaging a sharp edge, the authors were able to calculate the modulation transfer function (MTF) of this finely structured scintillator. Results: The x-ray images of individually resolved pores suggest that they have been almost uniformly filled, and the MTF measurements show the feasibility of a few microns spatial resolution imaging, as set by the scintillator pore size. Compared to existing techniques utilizing CsI needles as a structured scintillator, their results imply an almost sevenfold improvement in resolution. Finally, high resolution images, taken by their detector, are presented. Conclusions: The presented work successfully shows the functionality of their detector concept for high resolution imaging and further fabrication developments are most likely to result in higher quantum efficiencies.« less

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

NASA Astrophysics Data System (ADS)

Ono, Kouichi; Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji

2017-10-01

Atomic- or nanometer-scale roughness on feature surfaces has become an important issue to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases, smoothing of initially rough surfaces is required for planarization of film surfaces, and controlled surface roughening is required for maskless fabrication of organized nanostructures on surfaces. An understanding, under what conditions plasma etching results in surface roughening and/or smoothing and what are the mechanisms concerned, is of great technological as well as fundamental interest. In this article, we review recent developments in the experimental and numerical study of the formation and evolution of surface roughness (or surface morphology evolution such as roughening, smoothing, and ripple formation) during plasma etching of Si, with emphasis being placed on a deeper understanding of the mechanisms or plasma-surface interactions that are responsible for. Starting with an overview of the experimental and theoretical/numerical aspects concerned, selected relevant mechanisms are illustrated and discussed primarily on the basis of systematic/mechanistic studies of Si etching in Cl-based plasmas, including noise (or stochastic roughening), geometrical shadowing, surface reemission of etchants, micromasking by etch inhibitors, and ion scattering/chanelling. A comparison of experiments (etching and plasma diagnostics) and numerical simulations (Monte Carlo and classical molecular dynamics) indicates a crucial role of the ion scattering or reflection from microscopically roughened feature surfaces on incidence in the evolution of surface roughness (and ripples) during plasma etching; in effect, the smoothing/non-roughening condition is characterized by reduced effects of the ion reflection, and the roughening-smoothing transition results from reduced ion reflections caused by a change in the predominant ion flux due to that in plasma conditions. Smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces during etching (normal ion incidence) and formation of surface ripples by plasma etching (off-normal ion incidence) are also presented and discussed in this context.

Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

PubMed

Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2018-03-30

The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

Plasma processing of superconducting radio frequency cavities

NASA Astrophysics Data System (ADS)

Upadhyay, Janardan

The development of plasma processing technology of superconducting radio frequency (SRF) cavities not only provides a chemical free and less expensive processing method, but also opens up the possibility for controlled modification of the inner surfaces of the cavity for better superconducting properties. The research was focused on the transition of plasma etching from two dimensional flat surfaces to inner surfaces of three dimensional (3D) structures. The results could be applicable to a variety of inner surfaces of 3D structures other than SRF cavities. Understanding the Ar/Cl2 plasma etching mechanism is crucial for achieving the desired modification of Nb SRF cavities. In the process of developing plasma etching technology, an apparatus was built and a method was developed to plasma etch a single cell Pill Box cavity. The plasma characterization was done with the help of optical emission spectroscopy. The Nb etch rate at various points of this cavity was measured before processing the SRF cavity. Cylindrical ring-type samples of Nb placed on the inner surface of the outer wall were used to measure the dependence of the process parameters on plasma etching. The measured etch rate dependence on the pressure, rf power, dc bias, temperature, Cl2 concentration and diameter of the inner electrode was determined. The etch rate mechanism was studied by varying the temperature of the outer wall, the dc bias on the inner electrode and gas conditions. In a coaxial plasma reactor, uniform plasma etching along the cylindrical structure is a challenging task due to depletion of the active radicals along the gas flow direction. The dependence of etch rate uniformity along the cylindrical axis was determined as a function of process parameters. The formation of dc self-biases due to surface area asymmetry in this type of plasma and its variation on the pressure, rf power and gas composition was measured. Enhancing the surface area of the inner electrode to reduce the asymmetry was studied by changing the contour of the inner electrode. The optimized contour of the electrode based on these measurements was chosen for SRF cavity processing.

Effects of Different Combinations of Er:YAG Laser-Adhesives on Enamel Demineralization and Bracket Bond Strength.

PubMed

Çokakoğlu, Serpil; Nalçacı, Ruhi; Üşümez, Serdar; Malkoç, Sıddık

2016-04-01

The purpose of this study was to investigate the demineralization around brackets and shear bond strength (SBS) of brackets bonded to Er:YAG laser-irradiated enamel at different power settings with various adhesive systems combinations. A total of 108 premolar teeth were used in this study. Teeth were assigned into three groups according to the etching procedure, then each group divided into three subgroups based on the application of different adhesive systems. There were a total of nine groups as follows. Group 1: Acid + Transbond XT Primer; group 2: Er:YAG (100 mJ, 10 Hz) etching + Transbond XT Primer; group 3: Er:YAG (200 mJ, 10 Hz) etching + Transbond XT Primer; group 4: Transbond Plus self-etching primer (SEP); group 5: Er:YAG (100 mJ, 10 Hz) etching + Transbond Plus SEP; group 6: Er:YAG (200 mJ, 10 Hz) etching + Transbond Plus SEP; group 7: Clearfil Protect Bond; group 8: Er:YAG (100 mJ, 10 Hz) etching + Clearfil Protect Bond; group 9: Er:YAG (200 mJ, 10 Hz) etching + Clearfil Protect Bond. Brackets were bonded with Transbond XT Adhesive Paste in all groups. Teeth to be evaluated for demineralization and SBS were exposed to pH and thermal cyclings, respectively. Then, demineralization samples were scanned with micro-CT to determine lesion depth values. For SBS test, a universal testing machine was used and adhesive remnant was index scored after debonding. Data were analyzed statistically. No significant differences were found among the lesion depth values of the various groups, except for G7 and G8, in which the lowest values were recorded. The lowest SBS values were in G7, whereas the highest were in G9. The differences between the other groups were not significant. Er:YAG laser did not have a positive effect on prevention of enamel demineralization. When two step self-etch adhesive is preferred for bonding brackets, laser etching at 1 W (100 mJ, 10 Hz) is suggested to improve SBS of brackets.

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

Nanoporous polymeric nanofibers based on selectively etched PS-b-PDMS block copolymers.

PubMed

Demirel, Gokcen B; Buyukserin, Fatih; Morris, Michael A; Demirel, Gokhan

2012-01-01

One-dimensional nanoporous polymeric nanofibers have been fabricated within an anodic aluminum oxide (AAO) membrane by a facile approach based on selective etching of poly(dimethylsiloxane) (PDMS) domains in polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) block copolymers that had been formed within the AAO template. It was observed that prior to etching, the well-ordered PS-b-PDMS nanofibers are solid and do not have any porosity. The postetched PS nanofibers, on the other hand, had a highly porous structure having about 20-50 nm pore size. The nanoporous polymeric fibers were also employed as a drug carrier for the native, continuous, and pulsatile drug release using Rhodamine B (RB) as a model drug. These studies showed that enhanced drug release and tunable drug dosage can be achieved by using ultrasound irradiation. © 2011 American Chemical Society

A miniature extrinsic fiber Fabry-Perot pressure sensor based on fiber etching

NASA Astrophysics Data System (ADS)

Ge, Yixian; Wang, Ming; Yang, Chundi

2009-10-01

This paper presents a miniature fiber optic pressure sensor based on Fabry-Perot interference fabricated on the tip of a single mode (SM) fiber. The sensor measures only 125μm in diameter. A Fabry-Perot cavity and a thin silica diaphragm are fabricated by simple techniques involving only fusion splicing, cleaving, and wet chemical etching. Interference pattern of the sensor is analyzed and issues in sensor design are discussed. The overall chemical reaction of the fiber wet etching is specifically represented. Pressure testing system is carried out. By tracing a peak point in the interference spectrum, the gap length of the sensor can be demodulated. The sensor is made entirely of fused silica, whose structure has good stability, cabinet, simple for fabrication and low cost. It may also find uses in medical applications.

A miniature extrinsic fiber Fabry-Perot pressure sensor based on fiber etching

NASA Astrophysics Data System (ADS)

Ge, Yixian; Zhou, Junping; Wang, Tingting

2011-11-01

A miniature fiber optic pressure sensor based on Fabry-Perot interference fabricated on the tip of a single mode (SM) fiber is presented. The sensor measures only 125μm in diameter. A Fabry-Perot cavity and a thin silica diaphragm are fabricated by simple techniques involving only cleaving, wet chemical etching and fusion splicing. Interference pattern of the sensor is analyzed and issues in sensor design are discussed. The overall chemical reaction of the fiber wet etching is specifically represented. Pressure testing system is carried out. By tracing a peak point in the interference spectrum, the gap length of the sensor can be demodulated. Experimental results show the sensor has a good linearity. The sensor is made entirely of fused silica, whose structure has good stability, cabinet, simple for fabrication and low cost.

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogart, Katherine Huderle Andersen; Shul, Randy John; Stevens, Jeffrey

2008-10-01

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al{sub x} Ga{sub 1-x} N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greatermore » than 95% of that of a perfectly smooth and vertical facet.« less

Fabrication of polydimethylsiloxane (PDMS) - based multielectrode array for neural interface.

PubMed

Kim, Jun-Min; Oh, Da-Rong; Sanchez, Joaquin; Kim, Shang-Hyub; Seo, Jong-Mo

2013-01-01

Flexible multielectrode arrays (MEAs) are being developed with various materials, and polyimide has been widely used due to the conveniece of process. Polyimide is developed in the form of photoresist. And this enable precise and reproducible fabrication. PDMS is another good candidate for MEA base material, but it has poor surface energy and etching property. In this paper, we proposed a better fabrication process that could modify PDMS surface for a long time and open the site of electrode and pad efficiently without PDMS etching.

The Influence of Pores in Track Etched Membranes and Prepared on their Base Polymer/Metal Composites on their Fracture Strength

NASA Astrophysics Data System (ADS)

Gumirova, V. N.; Bedin, S. A.; Abdurashidova, G. S.; Razumovskaya, I. V.

The strength of track etched membranes and prepared on their base polymer/metal composites is analysed in point of view of the pores form evolution during the extension and the interaction of elastic mechanical fields on closely positioned pores. The stress-strain curves for track membranes and composites PET/Cu are demonstrated for pore density 1.2×107сm-2 and diameters from 0.06 μm to 2.9 μm

Etched tracks and serendipitous dosimetry.

PubMed

Fleischer, Robert L; Chang, Sekyung; Farrell, Jeremy; Herrmann, Rachel C; MacDonald, Jonathan; Zalesky, Marek; Doremus, Robert H

2006-01-01

Nuclear tracks in detectors that just happened to be there can be found in unexpected places. Eyeglasses, household glass, minerals, objects that were exposed to nuclear explosions, and space equipment on the moon are examples. Such materials allow us to measure doses of past radon exposures, cosmic-ray fluences, fission rates and neutrons. Incidental results include measuring mountain-building rates and deciding where finding oil is likely (or unlikely); in another case erosion rates of surface materials in space are found. New results that assess the effects of hydration layers on the leaching out from glass surfaces of imbedded alpha-recoil nuclei imply that long-term, retrospective radon measurements can be made more reliable by selecting only glass with compact hydration layers.

Source abundances of ultra heavy elements derived from UHCRE measurements.

PubMed

Domingo, C; Font, J; Baixeras, C; Fernandez, F

1996-11-01

A total of 205 tracks have been located, measured, and positively identified as originating from Ultra Heavy (Z > or = 65) cosmic ray ions with energies over 2 GeV/amu in the 10 UHCRE plastic track detector (mainly Lexan polycarbonate) stacks studied by our Group. About 40 values of reduced etch rate S have been obtained along each of these tracks. A method based on determining the gradient of S, together with calibration in accelerators, is used to determine the charge of each ion resulting in one of such tracks to obtain the charge spectrum of the recorded Ultra Heavy ions. The abundance ratio of ions with 87 < or = Z < or = 100 to those with 74 < or = Z < or = 86 as well as that of ions with 81 < or = Z < or = 86 to those with 74 < or = Z < or = 80 are calculated at 0.016 and 0.32, respectively, which agree with the values obtained from measurements in the HEAO-3 and Ariel-6 experiments. The abundance ratio of ions with 70 < or = Z < or = 73 to those with 74 < or = Z < or = 86 is also calculated, but its value (0.074) did not seem to be significant because of our detectors' low registration efficiency in the charge range 70 < or = Z < or = 73. A computer program developed by our Group, based on the Leaky Box cosmic ray propagation model, has been used to determine the source abundances of cosmic ray nuclei with Z > or = 65 inferred from the abundances measured in the UHCRE. It appeared that r-process synthesized elements were overabundant compared to the Solar System abundances, as predicted by other authors.

Effects of anode geometry on forward wide-angle neon ion emissions in 3.5 kJ plasma focus device by novel mega-size panorama polycarbonate image detectors

NASA Astrophysics Data System (ADS)

Sohrabi, M.; Soltani, Z.; Sarlak, Z.

2018-03-01

Forward wide-angle neon ion emissions in a 3.5 kJ plasma focus device (PFD) were studied using 5 different anode top geometries; hollow-end cylinder, solid triangle, solid hemisphere, hollow-end cone and flat-end cone. Position-sensitive mega-size panorama polycarbonate ion image detectors (MS-PCID) developed by dual-cell circular mega-size electrochemical etching (MS-ECE) systems were applied for processesing wide-angle neon ion images on MS-PCIDs exposed on the PFD cylinder top base under a single pinch shot. The images can be simply observed, analyzed and relatively quantified in terms of ion emission angular distributions even by the unaided eyes. By analysis of the forward neon ion emission images, the ion emission yields, ion emission angular distributions, iso-fluence ion contours and solid angles of ion emissions in 4π PFD space were determined. The neon ion emission yields on the PFD cylinder top base are in an increasing order ~2.1×109, ~2.2 ×109, ~2.8×109, ~2.9×109, and ~3.5×109 neon ions/shot for the 5 stated anode top geometries respectively. The panorama neon ion images as diagnosed even by the unaided eyes demonstrate the lowest and highest ion yields from the hollow-end cylinder and flat-end cone anode tops respectively. Relative dynamic qualitative neon ion spectrometry was made by the unaided eyes demonstrating relative neon ion energy as they appear. The study also demonstrates the unique power of the MS-PCID/MS-ECE imaging system as an advanced state-of-the-art ion imaging method for wide-angle dynamic parametric studies in PFD space and other ion study applications.

Ultrananocrystalline Diamond Membranes for Detection of High-Mass Proteins

NASA Astrophysics Data System (ADS)

Kim, H.; Park, J.; Aksamija, Z.; Arbulu, M.; Blick, R. H.

2016-12-01

Mechanical resonators realized on the nanoscale by now offer applications in mass sensing of biomolecules with extraordinary sensitivity. The general idea is that perfect mechanical mass sensors should be of extremely small size to achieve zepto- or yoctogram sensitivity in weighing single molecules similar to a classical scale. However, the small effective size and long response time for weighing biomolecules with a cantilever restricts their usefulness as a high-throughput method. Commercial mass spectrometry (MS), on the other hand, such as electrospray ionization and matrix-assisted laser desorption and ionization (MALDI) time of flight (TOF) and their charge-amplifying detectors are the gold standards to which nanomechanical resonators have to live up to. These two methods rely on the ionization and acceleration of biomolecules and the following ion detection after a mass selection step, such as TOF. The principle we describe here for ion detection is based on the conversion of kinetic energy of the biomolecules into thermal excitation of chemical vapor deposition diamond nanomembranes via phonons followed by phonon-mediated detection via field emission of thermally emitted electrons. We fabricate ultrathin diamond membranes with large lateral dimensions for MALDI TOF MS of high-mass proteins. These diamond membranes are realized by straightforward etching methods based on semiconductor processing. With a minimal thickness of 100 nm and cross sections of up to 400 ×400 μ m2 , the membranes offer extreme aspect ratios. Ion detection is demonstrated in MALDI TOF analysis over a broad range from insulin to albumin. The resulting data in detection show much enhanced resolution as compared to existing detectors, which can offer better sensitivity and overall performance in resolving protein masses.

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.

PubMed

Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

2018-05-29

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer (~ 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm 2 /V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Etching twin core fiber for the temperature-independent refractive index sensing

NASA Astrophysics Data System (ADS)

Zhang, Chuanbiao; Ning, Tigang; Li, Jing; Zheng, Jingjing; Gao, Xuekai; Lin, Heng; Pei, Li

2018-04-01

We proposed an ultra-compact chemically etched twin core fiber (TCF) based optic refractive index (RI) sensor, in which the etched fiber was fabricated by immersing in an aqueous solution of hydrofluoric acid (HF) to etch the cladding. Due to the multipath evolutions of light during the TCF, the mode induced interference pattern can be used for measurement. Numerical simulations were performed, demonstrating that only the cladding mode strongly interacts with the surrounding media, and the higher cladding modes will be more sensitive to external medium. In the experiment demonstration, the RI response characteristics of the sensor were investigated, which shows a relatively high RI sensitivity and a much low temperature cross-sensitivity with about 1.06 × 10-6 RIU °C-1. Due to low cost and easy fabrication, the sensor can be a suitable candidate in the biochemical field.

Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4

NASA Astrophysics Data System (ADS)

Qi, S. L.; Chen, Z. Z.; Fang, H.; Sun, Y. J.; Sang, L. W.; Yang, X. L.; Zhao, L. B.; Tian, P. F.; Deng, J. J.; Tao, Y. B.; Yu, T. J.; Qin, Z. X.; Zhang, G. Y.

2009-08-01

Hot phosphor acid (H3PO4) etching is presented to form a roughened surface with dodecagonal pyramids on laser lift-off N face GaN grown by metalorganic chemical vapor deposition. A detailed analysis of time evolution of surface morphology is described as a function of etching temperature. The activation energy of the H3PO4 etching process is 1.25 eV, indicating the process is reaction-limited scheme. And it is found that the oblique angle between the facets and the base plane increases as the temperature increases. Thermodynamics and kinetics related factors of the formation mechanism of the dodecagonal pyramid are also discussed. The light output power of a vertical injection light-emitting-diode (LED) with proper roughened surface shows about 2.5 fold increase compared with that of LED without roughened surface.