Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C 4F 8 and Ar/CHF 3 Plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2016-09-08

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Nanowall formation by maskless wet-etching on a femtosecond laser irradiated silicon surface

NASA Astrophysics Data System (ADS)

Lee, Siwoo; Jo, Kukhyun; Keum, Hee-sung; Chae, Sangmin; Kim, Yonghyeon; Choi, Jiyeon; Lee, Hyun Hwi; Kim, Hyo Jung

2018-04-01

We found that micro-cells surrounded by nanowalls can be formed by a maskless wet-etching process on Si (100) surfaces possessing Laser Induced Periodic Surface Structure (LIPSS) by femtosecond laser irradiation. The LIPSS process could produce periodic one-dimensional micron scale ripples on a Si surface, which could be developed into micro-cells by a subsequent etching process. The solution etching conditions strongly affected both the micro-cell and nanowall shapes such as the height and the thickness of nanowalls. The tetramethylammonium hydroxide solution created thin nanowalls and the resulting micro-cells with a well-flattened bottom while the KOH solution formed thick walls and incomplete micro-cells. The bottoms of micro-cells surrounded by the nanowalls were considerably flat with a 3.10 nm surface roughness. A pentacene layer was deposited on the micro-cells of a Si surface to evaluate the film properties by grazing incidence wide angle x-ray scattering measurements. The pentacene film on the micro-cell Si surface showed a strong film phase, which was comparable to the film phase grown on the atomically flat Si surface.

Effect of etching parameters on antireflection properties of Si subwavelength grating structures for solar cell applications

NASA Astrophysics Data System (ADS)

Leem, J. W.; Song, Y. M.; Lee, Y. T.; Yu, J. S.

2010-09-01

Silicon (Si) subwavelength grating (SWG) structures were fabricated on Si substrates by holographic lithography and subsequent inductively coupled plasma (ICP) etching process using SiCl4 with or without Ar addition for solar cell applications. To ensure a good nanosized pattern transfer into the underlying Si layer, the etch selectivity of Si over the photoresist mask is optimized by varying the etching parameters, thus improving antireflection characteristics. For antireflection analysis of Si SWG surfaces, the optical reflectivity is measured experimentally and it is also calculated theoretically by a rigorous coupled-wave analysis. The reflectance depends on the height, period, and shape of two-dimensional periodic Si subwavelength structures, correlated with ICP etching parameters. The optimized Si SWG structure exhibits a dramatic decrease in optical reflection of the Si surface over a wide angle of incident light ( θ i ), i.e. less than 5% at wavelengths of 300-1100 nm, leading to good wide-angle antireflection characteristics (i.e. solar-weighted reflection of 1.7-4.9% at θ i <50°) of Si solar cells.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Selective dry etching of silicon containing anti-reflective coating

NASA Astrophysics Data System (ADS)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic and Si layers) post pattern transfer, in a multi-layer structure will be discussed.

Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

NASA Astrophysics Data System (ADS)

Tinck, S.; Boullart, W.; Bogaerts, A.

2011-08-01

In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.

Determination of Etch Rate Behavior of 4H-SiC Using Chlorine Trifluoride Gas

NASA Astrophysics Data System (ADS)

Miura, Yutaka; Habuka, Hitoshi; Katsumi, Yusuke; Oda, Satoko; Fukai, Yasushi; Fukae, Katsuya; Kato, Tomohisa; Okumura, Hajime; Arai, Kazuo

2007-12-01

The etch rate of single-crystalline 4H-SiC is studied using chlorine trifluoride gas at 673-973 K and atmospheric pressure in a cold wall horizontal reactor. The 4H-SiC etch rate can be higher than 10 μm/min at substrate temperatures higher than 723 K. The etch rate increases with the chlorine trifluoride gas flow rate. The etch rate is calculated by taking into account the transport phenomena in the reactor including the chemical reaction at the substrate surface. The flat etch rate at the higher substrate temperatures is caused mainly by the relationship between the transport rate and the surface chemical reaction rate of chlorine trifluoride gas.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

PubMed

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, NoSoung; Ko, Heung Cho; Jung, Gun Young

2015-08-28

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

Etching nano-holes in silicon carbide using catalytic platinum nano-particles

NASA Astrophysics Data System (ADS)

Moyen, E.; Wulfhekel, W.; Lee, W.; Leycuras, A.; Nielsch, K.; Gösele, U.; Hanbücken, M.

2006-09-01

The catalytic reaction of platinum during a hydrogen etching process has been used to perform controlled vertical nanopatterning of silicon carbide substrates. A first set of experiments was performed with platinum powder randomly distributed on the SiC surface. Subsequent hydrogen etching in a hot wall reactor caused local atomic hydrogen production at the catalyst resulting in local SiC etching and hole formation. Secondly, a highly regular and monosized distribution of Pt was obtained by sputter deposition of Pt through an Au membrane serving as a contact mask. After the lift-off of the mask, the hydrogen etching revealed the onset of well-controlled vertical patterned holes on the SiC surface.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

NASA Astrophysics Data System (ADS)

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

2015-08-01

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02786a

Vertical Si nanowire arrays fabricated by magnetically guided metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Chun, Dong Won; Kim, Tae Kyoung; Choi, Duyoung; Caldwell, Elizabeth; Kim, Young Jin; Paik, Jae Cheol; Jin, Sungho; Chen, Renkun

2016-11-01

In this work, vertically aligned Si nanowire arrays were fabricated by magnetically guided metal-assisted directional chemical etching. Using an anodized aluminum oxide template as a shadow mask, nanoscale Ni dot arrays were fabricated on an Si wafer to serve as a mask to protect the Si during the etching. For the magnetically guided chemical etching, we deposited a tri-layer metal catalyst (Au/Fe/Au) in a Swiss-cheese configuration and etched the sample under the magnetic field to improve the directionality of the Si nanowire etching and increase the etching rate along the vertical direction. After the etching, the nanowires were dried with minimal surface-tension-induced aggregation by utilizing a supercritical CO2 drying procedure. High-resolution transmission electron microscopy (HR-TEM) analysis confirmed the formation of single-crystal Si nanowires. The method developed here for producing vertically aligned Si nanowire arrays could find a wide range of applications in electrochemical and electronic devices.

Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

NASA Astrophysics Data System (ADS)

Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

2013-02-01

The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

Morphology and electronic properties of silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Nie, Shu

2007-12-01

Several issues related to SiC surfaces are studied in the thesis using scanning tunneling microscopy/spectroscopy (STM/S) and atomic force microscopy (AFM). Specific surfaces examined include electropolished SiC, epitaxial graphene on SiC, and vicinal (i.e. slightly miscut from a low-index direction) SiC that have been subjected to high temperature hydrogen-etching. The electropolished surfaces are meant to mimic electrochemically etched SiC, which forms a porous network. The chemical treatment of the surface is similar between electropolishing and electrochemical etching, but the etching conditions are slightly different such that the former produces a flat surface (that is amenable to STM study) whereas the latter produces a complex 3-dimensional porous network. We have used these porous SiC layers as semi-permeable membranes in a biosensor, and we find that the material is quite biocompatible. The purpose of the STM/STS study is to investigate the surface properties of the SiC on the atomic scale in an effort to explain this biocompatibility. The observed tunneling spectra are found to be very asymmetric, with a usual amount of current at positive voltages but no observable current at negative voltages. We propose that this behavior is due to surface charge accumulating on an incompletely passivated surface. Measurements on SiC surfaces prepared by various amounts of hydrogen-etching are used to support this interpretation. Comparison with tunneling computations reveals a density of about 10 13 cm-2 fixed charges on both the electro-polished and the H-etched surfaces. The relatively insulating nature observed on the electro-polished SiC surface may provide an explanation for the biocompatibility of the surface. Graphene, a monolayer of carbon, is a new material for electronic devices. Epitaxial graphene on SiC is fabricated by the Si sublimation method in which a substrate is heated up to about 1350°C in ultra-high vacuum (UHV). The formation of the graphene is monitored using low-energy electron diffraction (LEED) and Auger electron spectroscopy, and the morphology of the graphitized surface is studied using AFM and STM. Use of H-etched SiC substrates enables a relatively flat surface morphology, although residual steps remain due to unintentional miscut of the wafers. Additionally, some surface roughness in the form of small pits is observed, possibly due to the fact that the surface treatments (H-etching and UHV annealing) having been performed in separate vacuum chambers with an intervening transfer through air. Field-effect transistors have been fabricated with our graphene layers; they show a relatively strong held effect at room temperature, with an electron mobility of 535 cm 2/Vs. This value is somewhat lower than that believed to be theoretically possible for this material, and one possible reason may be the nonideal morphology of the surface (i.e. because of the observed steps and pits). Tunneling spectra of the graphene reveal semi-metallic behavior, consistent with that theoretically expected for an isolated layer of graphene. However, additional discrete states are observed in the spectra, possibly arising from bonding at the graphene/SiC interface. The observation of these states provides important input towards an eventual determination of the complete interface structure, and additionally, such states may be relevant in determining the electron mobility of the graphene. Stepped vicinal SIC{0001} substrates are useful templates for epitaxial growth of various types of layers: thick layers of compound semiconductor (in which the steps help preserving the stacking arrangement in the overlayer), monolayers of graphene, or submonolayer semiconductor layers that form quantum wires along the step edges. Step array produced by H-etching of vicinal SiC (0001) and (0001¯) with various miscut angles have been studied by AFM. H-etching is found to produce full unit-cell-high steps on the (0001) Si-face surfaces, but half unit-cell-high steps on the (0001¯) C-face surfaces. These observations are consistent with an asymmetry in the surface energy (i.e. etch rate) of the two types of step terminations occurring on the different surfaces. For high miscut angles, facet formation is observed on the vicinal Si-face, but less so on the C-face. This difference is interpreted in terms of a lower surface energy of the C-face. In terms of applying the stepped surfaces as a template, a much better uniformity in the step-step separation is found for the C-face surfaces.

Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma

NASA Astrophysics Data System (ADS)

Amirov, I. I.; Gorlachev, E. S.; Mazaletskiy, L. A.; Izyumov, M. O.; Alov, N. V.

2018-03-01

In this work, we report a technique of the self-formation of a nanonet of fluorinated carbon nanowires on the Si surface using a combined etching in fluorine-containing C4F8/Ar and SF6 plasmas. Using scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy, we show that after the etching of Si in the C4F8/Ar plasma, a fluorinated carbon film of nanometer-scale thickness is formed on its surface and its formation accelerates at elevated temperatures. After a subsequent short-term etching in the SF6 plasma, the film is modified into a nanonet of self-formed fluorinated carbon nanowires.

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

NASA Astrophysics Data System (ADS)

Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

2017-12-01

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

NASA Astrophysics Data System (ADS)

Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

2015-08-01

Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F-) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F-, smaller azimuth angle of Fsbnd Ag(T4)sbnd Si, shorter bond length of Fsbnd Si compared with Fsbnd Ag. As F- was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF4 when it bonded with enough F- while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F- to Si.

A high-performance nanoporous Si/Al2O3 foam lithium-ion battery anode fabricated by selective chemical etching of the Al-Si alloy and subsequent thermal oxidation.

PubMed

Hwang, Gaeun; Park, Hyungmin; Bok, Taesoo; Choi, Sinho; Lee, Sungjun; Hwang, Inchan; Choi, Nam-Soon; Seo, Kwanyong; Park, Soojin

2015-03-14

Nanostructured micrometer-sized Al-Si particles are synthesized via a facile selective etching process of Al-Si alloy powder. Subsequent thin Al2O3 layers are introduced on the Si foam surface via a selective thermal wet oxidation process of etched Al-Si particles. The resulting Si/Al2O3 foam anodes exhibit outstanding cycling stability (a capacity retention of 78% after 300 cycles at the C/5 rate) and excellent rate capability.

Ultradeep electron cyclotron resonance plasma etching of GaN

DOE PAGES

Harrison, Sara E.; Voss, Lars F.; Torres, Andrea M.; ...

2017-07-25

Here, ultradeep (≥5 μm) electron cyclotron resonance plasma etching of GaN micropillars was investigated. Parametric studies on the influence of the applied radio-frequency power, chlorine content in a Cl 2/Ar etch plasma, and operating pressure on the etch depth, GaN-to-SiO 2 selectivity, and surface morphology were performed. Etch depths of >10 μm were achieved over a wide range of parameters. Etch rates and sidewall roughness were found to be most sensitive to variations in RF power and % Cl 2 in the etch plasma. Selectivities of >20:1 GaN:SiO 2 were achieved under several chemically driven etch conditions where a maximummore » selectivity of ~39:1 was obtained using a 100% Cl 2 plasma. The etch profile and (0001) surface morphology were significantly influenced by operating pressure and the chlorine content in the plasma. Optimized etch conditions yielded >10 μm tall micropillars with nanometer-scale sidewall roughness, high GaN:SiO 2 selectivity, and nearly vertical etch profiles. These results provide a promising route for the fabrication of ultradeep GaN microstructures for use in electronic and optoelectronic device applications. In addition, dry etch induced preferential crystallographic etching in GaN microstructures is also demonstrated, which may be of great interest for applications requiring access to non- or semipolar GaN surfaces.« less

Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

NASA Astrophysics Data System (ADS)

Ben Rabha, M.; Hajji, M.; Belhadj Mohamed, S.; Hajjaji, A.; Gaidi, M.; Ezzaouia, H.; Bessais, B.

2012-02-01

In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400-1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

NASA Astrophysics Data System (ADS)

Wu, Mingching; Fang, Weileun

2006-02-01

This work attempts to integrate poly-Si thin film and single-crystal-silicon (SCS) structures in a monolithic process. The process integrated multi-depth DRIE (deep reactive ion etching), trench-refilled molding, a two poly-Si MUMPs process and (1 1 1) Si bulk micromachining to accomplish multi-thickness and multi-depth structures for superior micro-optical devices. In application, a SCS scanning mirror driven by self-aligned vertical comb-drive actuators was demonstrated. The stiffness of the mirror was significantly increased by thick SCS structures. The thin poly-Si film served as flexible torsional springs and electrical routings. The depth difference of the vertical comb electrodes was tuned by DRIE to increase the devices' stroke. Finally, a large moving space was available after the bulk Si etching. In summary, the present fabrication process, named (1 1 1) MOSBE (molded surface-micromachining and bulk etching release on (1 1 1) Si substrate), can further integrate with the MUMPs devices to establish a more powerful platform.

X-ray Reflectivity Study of a Highly Rough Surface: Si Nanowires Grown by Ag Nanoparticle Etching

NASA Astrophysics Data System (ADS)

Kremenak, Jesse; Arendse, Christopher; Cummings, Franscious; Chen, Yiyao; Miceli, Paul

Vertically oriented Si nanowires (SiNWs) formed by Ag-assisted wet chemical etching of a Si(100) substrate was studied by X-ray reflectivity (XRR) in combination with electron microscopy. Si(100) wafers coated with Ag nanoparticles, which serve as a catalyst, were etched for different durations in a HF/H2O2/DI-H2O solution. Because of the extreme roughness of these surfaces, there are challenges for using XRR methods in such systems. Therefore, significant attention is given to the analysis method of the XRR measurements. This sample-average information presents a valuable complement to electron microscopy studies, which focus on small sections of the sample. The present work shows-for the first time-the amount and distribution of Ag during the formation of SiNWs fabricated by Ag-assisted wet chemical etching, which is vital information for understanding the etching mechanisms. Support is gratefully acknowledged from the National Science Foundation (USA) - DGE1069091, the National Research Foundation (RSA) - TTK14052167658, 76568, 92520, and 93212; and the University of Missouri/University of Western Cape Linkage Program.

Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching

NASA Astrophysics Data System (ADS)

Lin, Wen-kui; Zeng, Chun-hong; Sun, Yu-hua; Zhang, Xuan; Li, Zhe; Yang, Tao-tao; Ju, Tao; Zhang, Bao-shun

2018-02-01

Additional scattering of electrons in the complex MOSFET channel caused by off-cut angle of (0001) 4H-SiC wafer, makes accurate crystal face acquisition much desired. Molten KOH was used to etch the circular grooves on the SiC wafer surface in muffle furnace, and hexagonal grooves with SiC crystal symmetry were obtained. Average etching rates at 500°C along <11-20> and <1-100> direction were about 4.826 um/min and 4.112 um/min, respectively,with a etching anisotropy ratio of 1.18. The m face was obtained by controlling the etching time and Si face was obtained by selfstopping effect. The method we developed in this paper has potential applications in the accurate crystal face acquisition of (0001) 4H-SiC epi-wafer, and the preparation of structures based on 4H-SiC.

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

Multi-functional micro electromechanical devices and method of bulk manufacturing same

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

NASA Astrophysics Data System (ADS)

Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

2013-06-01

By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

In-situ photoluminescence imaging for passivation-layer etching process control for photovoltaics

NASA Astrophysics Data System (ADS)

Lee, J. Z.; Michaelson, L.; Munoz, K.; Tyson, T.; Gallegos, A.; Sullivan, J. T.; Buonassisi, T.

2014-07-01

Light-induced plating (LIP) of solar-cell metal contacts is a scalable alternative to silver paste. However, LIP requires an additional patterning step to create openings in the silicon nitride (SiNx) antireflection coating (ARC) layer prior to metallization. One approach to pattern the SiNx is masking and wet chemical etching. In-situ real-time photoluminescence imaging (PLI) is demonstrated as a process-monitoring method to determine when SiNx has been fully removed during etching. We demonstrate that the change in PLI signal intensity during etching is caused by a combination of (1) decreasing light absorption from the reduction in SiNx ARC layer thickness and (2) decreasing surface lifetime as the SiNx/Si interface transitions to an etch-solution/Si. Using in-situ PLI to guide the etching process, we demonstrate a full-area plated single-crystalline silicon device. In-situ PLI has the potential to be integrated into a commercial processing line to improve process control and reliability.

Antireflective hydrophobic si subwavelength structures using thermally dewetted Ni/SiO2 nanomask patterns.

PubMed

Joo, Dong Hyuk; Leem, Jung Woo; Yu, Jae Su

2011-11-01

We report the disordered silicon (Si) subwavelength structures (SWSs), which are fabricated with the use of inductively coupled plasma (ICP) etching in SiCl4 gas using nickel/silicon dioxide (Ni/SiO2) nanopattens as the etch mask, on Si substrates by varying the etching parameters for broadband antireflective and self-cleaning surfaces. For the fabricated Si SWSs, the antireflection characteristics are experimentally investigated and a theoretical analysis is made based on the rigorous coupled-wave analysis method. The desirable dot-like Ni nanoparticles on SiO2/Si substrates are formed by the thermal dewetting process of Ni films at 900 degrees C. The truncated cone shaped Si SWS with a high average height of 790 +/- 23 nm, which is fabricated by ICP etching with 5 sccm SiCl4 at 50 W RF power with additional 200 W ICP power under 10 mTorr process pressure, exhibits a low average reflectance of approximately 5% over a wide wavelength range of 450-1050 nm. The water contact angle of 110 degrees is obtained, indicating a hydrophobic surface. The calculated reflectance results are also reasonably consistent with the experimental data.

Antireflection and SiO2 Surface Passivation by Liquid-Phase Chemistry for Efficient Black Silicon Solar Cells: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, H. C.; Oh, J.; Zhang, Y.

2012-06-01

We report solar cells with both black Si antireflection and SiO2 surface passivation provided by inexpensive liquid-phase chemistry, rather than by conventional vacuum-based techniques. Preliminary cell efficiency has reached 16.4%. Nanoporous black Si antireflection on crystalline Si by aqueous etching promises low surface reflection for high photon utilization, together with lower manufacturing cost compared to vacuum-based antireflection coating. Ag-nanoparticle-assisted black Si etching and post-etching chemical treatment recently developed at NREL enables excellent control over the pore diameter and pore separation. Performance of black Si solar cells, including open-circuit voltage, short-circuit current density, and blue response, has benefited from these improvements.more » Prior to this study, our black Si solar cells were all passivated by thermal SiO2 produced in tube furnaces. Although this passivation is effective, it is not yet ideal for ultra-low-cost manufacturing. In this study, we report, for the first time, the integration of black Si with a proprietary liquid-phase deposition (LPD) passivation from Natcore Technology. The Natcore LPD forms a layer of <10-nm SiO2 on top of the black Si surface in a relatively mild chemical bath at room temperature. We demonstrate black Si solar cells with LPD SiO2 with a spectrum-weighted average reflection lower than 5%, similar to the more costly thermally grown SiO2 approach. However, LPD SiO2 provides somewhat better surface-passivation quality according to the lifetime analysis by the photo-conductivity decay measurement. Moreover, black Si solar cells with LPD SiO2 passivation exhibit higher spectral response at short wavelength compared to those passivated by thermally grown SiO2. With further optimization, the combination of aqueous black Si etching and LPD could provide a pathway for low-cost, high-efficiency crystalline Si solar cells.« less

Molecular dynamics analysis of silicon chloride ion incidence during Si etching in Cl-based plasmas: Effects of ion incident energy, angle, and neutral radical-to-ion flux ratio

NASA Astrophysics Data System (ADS)

Nakazaki, Nobuya; Eriguchi, Koji; Ono, Kouichi

2014-10-01

Profile anomalies and surface roughness are critical issues to be resolved in plasma etching of nanometer-scale microelectronic devices, which in turn requires a better understanding of the effects of ion incident energy and angle on surface reaction kinetics. This paper presents a classical molecular dynamics (MD) simulation of Si(100) etching by energetic Clx+ (x = 1-2) and SiClx+ (x = 0-4) ion beams with different incident energies Ei = 20-500 eV and angles θi = 0-85°, with and without low-energy neutral Cl radicals (neutral-to-ion flux ratios Γn/Γi = 0 and 100). An improved Stillinger-Weber interatomic potential was used for the Si/Cl system. Numerical results indicated that in Cl+, Cl2+, SiCl3+, and SiCl4+ incidences for θi = 0° and Γn/Γi = 0, the etching occurs in the whole Ei range investigated; on the other hand, in SiCl+ and SiCl2+ incidences, the deposition occurs at low Ei < 300 and 150 eV, respectively, while the etching occurs at further increased Ei. For SiCl+ and SiCl2+, the transition energies from deposition and etching become lowered for Γn/Γi = 100. Numerical results further indicated that in the SiCl+ incidence for Γn/Γi = 0, the etching occurs in the whole θi range investigated for Ei >= 300 eV; on the other hand, for Ei = 100 and 150 eV, the deposition occurs at low θi < 60° and 40°, respectively, while the etching occurs at further increased θi; in addition, for Ei <= 50 eV, the deposition occurs in the whole θi range investigated.

Fabrication mechanism of friction-induced selective etching on Si(100) surface

PubMed Central

2012-01-01

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems. PMID:22356699

Fabrication mechanism of friction-induced selective etching on Si(100) surface.

PubMed

Guo, Jian; Song, Chenfei; Li, Xiaoying; Yu, Bingjun; Dong, Hanshan; Qian, Linmao; Zhou, Zhongrong

2012-02-23

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask

PubMed Central

2014-01-01

A new fabrication method is proposed to produce nanostructures on monocrystalline silicon based on the friction-induced selective etching of its Si3N4 mask. With low-pressure chemical vapor deposition (LPCVD) Si3N4 film as etching mask on Si(100) surface, the fabrication can be realized by nanoscratching on the Si3N4 mask and post-etching in hydrofluoric acid (HF) and potassium hydroxide (KOH) solution in sequence. Scanning Auger nanoprobe analysis indicated that the HF solution could selectively etch the scratched Si3N4 mask and then provide the gap for post-etching of silicon substrate in KOH solution. Experimental results suggested that the fabrication depth increased with the increase of the scratching load or KOH etching period. Because of the excellent masking ability of the Si3N4 film, the maximum fabrication depth of nanostructure on silicon can reach several microns. Compared to the traditional friction-induced selective etching technique, the present method can fabricate structures with lesser damage and deeper depths. Since the proposed method has been demonstrated to be a less destructive and flexible way to fabricate a large-area texture structure, it will provide new opportunities for Si-based nanofabrication. PMID:24940174

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

Direct observation for atomically flat and ordered vertical {111} side-surfaces on three-dimensionally figured Si(110) substrate using scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Yang, Haoyu; Hattori, Azusa N.; Ohata, Akinori; Takemoto, Shohei; Hattori, Ken; Daimon, Hiroshi; Tanaka, Hidekazu

2017-11-01

A three-dimensional Si{111} vertical side-surface structure on a Si(110) wafer was fabricated by reactive ion etching (RIE) followed by wet-etching and flash-annealing treatments. The side-surface was studied with scanning tunneling microscopy (STM) in atomic scale for the first time, in addition to atomic force microscopy (AFM), scanning electron microscopy (SEM), and low-energy electron diffraction (LEED). AFM and SEM showed flat and smooth vertical side-surfaces without scallops, and STM proved the realization of an atomically-flat 7 × 7-reconstructed structure, under optimized RIE and wet-etching conditions. STM also showed that a step-bunching occurred on the produced {111} side-surface corresponding to a reversely taped side-surface with a tilt angle of a few degrees, but did not show disordered structures. Characteristic LEED patterns from both side- and top-reconstructed surfaces were also demonstrated.

Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl{sup +} and Br{sup +} ion incidence in the presence of Cl and Br neutrals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakazaki, Nobuya, E-mail: nakazaki.nobuya.58x@st.kyoto-u.ac.jp; Takao, Yoshinori; Eriguchi, Koji

Classical molecular dynamics (MD) simulations have been performed for Cl{sup +} and Br{sup +} ions incident on Si(100) surfaces with Cl and Br neutrals, respectively, to gain a better understanding of the ion-enhanced surface reaction kinetics during Si etching in Cl- and Br-based plasmas. The ions were incident normally on surfaces with translational energies in the range E{sub i} = 20–500 eV, and low-energy neutrals of E{sub n} = 0.01 eV were also incident normally thereon with the neutral-to-ion flux ratio in the range Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 0–100, where an improved Stillinger--Weber potential form was employed for the interatomic potential concerned. The etch yieldsmore » and thresholds presently simulated were in agreement with the experimental results previously reported for Si etching in Cl{sub 2} and Br{sub 2} plasmas as well as in Cl{sup +}, Cl{sub 2}{sup +}, and Br{sup +} beams, and the product stoichiometry simulated was consistent with that observed during Ar{sup +} beam incidence on Si in Cl{sub 2}. Moreover, the surface coverage of halogen atoms, halogenated layer thickness, surface stoichiometry, and depth profile of surface products simulated for Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 100 were in excellent agreement with the observations depending on E{sub i} reported for Si etching in Cl{sub 2} plasmas. The MD also indicated that the yield, coverage, and surface layer thickness are smaller in Si/Br than in Si/Cl system, while the percentage of higher halogenated species in product and surface stoichiometries is larger in Si/Br. The MD further indicated that in both systems, the translational energy distributions of products and halogen adsorbates desorbed from surfaces are approximated by two Maxwellians of temperature T{sub 1} ≈ 2500 K and T{sub 2} ≈ 7000–40 000 K. These energy distributions are discussed in terms of the desorption or evaporation from hot spots formed through chemically enhanced physical sputtering and physically enhanced chemical sputtering, which have so far been speculated to both occur in the ion-enhanced surface reaction kinetics of plasma etching.« less

Surface roughness in XeF{sub 2} etching of a-Si/c-Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stevens, A.A.E.; Beijerinck, H.C.W.

2005-01-01

Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a {approx}12 nm amorphous silicon (a-Si) top layer and the underlying crystalline silicon (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF{sub 2} flux, we observe a similar evolution of the surface roughness as a function of the XeF{sub 2} dose proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}0.2. In the transition region from the pure amorphous to themore » pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 {sigma}, with {sigma} the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of {sigma} which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphology is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the experimental etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness.« less

Freestanding silicon quantum dots: origin of red and blue luminescence.

PubMed

Gupta, Anoop; Wiggers, Hartmut

2011-02-04

In this paper, we studied the behavior of silicon quantum dots (Si-QDs) after etching and surface oxidation by means of photoluminescence (PL) measurements, Fourier transform infrared spectroscopy (FTIR) and electron paramagnetic resonance spectroscopy (EPR). We observed that etching of red luminescing Si-QDs with HF acid drastically reduces the concentration of defects and significantly enhances their PL intensity together with a small shift in the emission spectrum. Additionally, we observed the emergence of blue luminescence from Si-QDs during the re-oxidation of freshly etched particles. Our results indicate that the red emission is related to the quantum confinement effect, while the blue emission from Si-QDs is related to defect states at the newly formed silicon oxide surface.

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

NASA Astrophysics Data System (ADS)

Oubensaid, E. H.; Duluard, C. Y.; Pichon, L. E.; Pereira, J.; Boufnichel, M.; Lefaucheux, P.; Dussart, R.; Ranson, P.

2009-07-01

The GaN etching by SiCl4 plasma is considered in an ICP tool. By respecting some material limitations, it has been possible to etch the gallium nitride in pure SiCl4 plasma, with an etch rate of 19 nm min-1. This result is comparable to other reported results. Thereafter, the combination of SiCl4 with SF6 and N2 was tested in order to increase the etch rate. The addition of SF6 in the plasma has enabled us to reach an etch rate of 53 nm min-1. However, best results were obtained with the addition of N2, with an increase of the etch rate by a factor of 6. Mass spectrometry was also performed in order to determine the effects of the additional gases. The surface morphology of the GaN was also analysed by scanning electron microscope after etching.

Collective evolution of submicron hillocks during the early stages of anisotropic alkaline wet chemical etching of Si(1 0 0) surfaces

NASA Astrophysics Data System (ADS)

Sana, P.; Vázquez, Luis; Cuerno, Rodolfo; Sarkar, Subhendu

2017-11-01

We address experimentally the large-scale dynamics of Si(1 0 0) surfaces during the initial stages of anisotropic wet (KOH) chemical etching, which are characterized through atomic force microscopy. These systems are known to lead to the formation of characteristic pyramids, or hillocks, of typical sizes in the nanometric/micrometer scales, thus with the potential for a large number of applications that can benefit from the nanotexturing of Si surfaces. The present pattern formation process is very strongly disordered in space. We assess the space correlations in such a type of rough surface and elucidate the existence of a complex and rich morphological evolution, featuring at least three different regimes in just 10 min of etching. Such a complex time behavior cannot be consistently explained within a single formalism for dynamic scaling. The pyramidal structure reveals itself as the basic morphological motif of the surface throughout the dynamics. A detailed analysis of the surface slope distribution with etching time reveals that the texturing process induced by the KOH etching is rather gradual and progressive, which accounts for the dynamic complexity. The various stages of the morphological evolution can be accurately reproduced by computer-generated surfaces composed by uncorrelated pyramidal structures. To reach such an agreement, the key parameters are the average pyramid size, which increases with etching time, its distribution and the surface coverage by the pyramidal structures.

Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layers

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; George, T.; Ksendzov, A.; Lin, T. L.; Pike, W. T.; Vasquez, R. P.; Wu, Z.-C.

1992-01-01

Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.

A Study on Ohmic Contact to Dry-Etched p-GaN

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Ao, Jin-Ping; Okada, Masaya; Ohno, Yasuo

Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000°C 30s) was tried on the SiCl4/Cl2-etched p-GaN and Ohmic contact was obtained.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Quantitative Analysis of Etching Rate Profiles for 11B+-Implanted Si3N4 Film

NASA Astrophysics Data System (ADS)

Nakata, Jyoji; Kajiyama, Kenji

1983-01-01

Etching rate enhancement for 11B+-implanted Si3N4 film was investigated both experimentally and theoretically. The etching solution was concentrated H3PO4 at ˜165°C Film thicknesses were precisely measured by ellipsometry. Enhancement resulted from Si-N bond breaking. This was confirmed by a decrease of infrared absorption at a 12.0 μm wavelength for Si-N bond vibration. Main and additional peaks were observed in the etching rate profile. The former was due to nuclear damage and was well represented by the calculated etching rate profile deduced from the nuclear deposited energy density distribution. The latter existed in the surface region only when the ion projected range was shorter than the film thickness. This peak was possibly caused by charge accumulation in the insulating Si3N4 film during 11B+ implantation.

The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

NASA Astrophysics Data System (ADS)

Tengeler, Sven; Kaiser, Bernhard; Ferro, Gabriel; Chaussende, Didier; Jaegermann, Wolfram

2018-01-01

The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si-OH/C-H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

Characterization of perovskite layer on various nanostructured silicon wafer

NASA Astrophysics Data System (ADS)

Rostan, Nur Fairuz Mohd; Sepeai, Suhaila; Ramli, Noor Fadhilah; Azhari, Ayu Wazira; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib; Zaidi, Saleem H.

2017-05-01

Crystalline silicon (c-Si) solar cell dominates 90% of photovoltaic (PV) market. The c-Si is the most mature of all PV technologies and expected to remain leading the PV technology by 2050. The attractive characters of Si solar cell are stability, long lasting and higher lifetime. Presently, the efficiency of c-Si solar cell is still stuck at 25% for one and half decades. Tandem approach is one of the attempts to improve the Si solar cell efficiency with higher bandgap layer is stacked on top of Si bottom cell. Perovskite offers a big potential to be inserted into a tandem solar cell. Perovskite with bandgap of 1.6 to 1.9 eV will be able to absorb high energy photons, meanwhile c-Si with bandgap of 1.124 eV will absorb low energy photons. The high carrier mobility, high carrier lifetime, highly compatible with both solution and evaporation techniques makes perovskite an eligible candidate for perovskite-Si tandem configuration. The solution of methyl ammonium lead iodide (MAPbI3) was prepared by single step precursor process. The perovskite layer was deposited on different c-Si surface structure, namely planar, textured and Si nanowires (SiNWs) by using spin-coating technique at different rotation speeds. The nanostructure of Si surface was textured using alkaline based wet chemical etching process and SiNW was grown using metal assisted etching technique. The detailed surface morphology and absorbance of perovskite were studied in this paper. The results show that the thicknesses of MAPbI3 were reduced with the increasing of rotation speed. In addition, the perovskite layer deposited on the nanostructured Si wafer became rougher as the etching time and rotation speed increased. The average surface roughness increased from ˜24 nm to ˜38 nm for etching time range between 5-60 min at constant low rotation speed (2000 rpm) for SiNWs Si wafer.

Surface morphology and dislocation characteristics near the surface of 4H-SiC wafer using multi-directional scanning transmission electron microscopy.

PubMed

Sato, Takahiro; Orai, Yoshihisa; Suzuki, Yuya; Ito, Hiroyuki; Isshiki, Toshiyuki; Fukui, Munetoshi; Nakamura, Kuniyasu; Schamp, C T

2017-10-01

To improve the reliability of silicon carbide (SiC) electronic power devices, the characteristics of various kinds of crystal defects should be precisely understood. Of particular importance is understanding the correlation between the surface morphology and the near surface dislocations. In order to analyze the dislocations near the surface of 4H-SiC wafers, a dislocation analysis protocol has been developed. This protocol consists of the following process: (1) inspection of surface defects using low energy scanning electron microscopy (LESEM), (2) identification of small and shallow etch pits using KOH low temperature etching, (3) classification of etch pits using LESEM, (4) specimen preparation of several hundred nanometer thick sample using the in-situ focused ion beam micro-sampling® technique, (5) crystallographic analysis using the selected diffraction mode of the scanning transmission electron microscope (STEM), and (6) determination of the Burgers vector using multi-directional STEM (MD-STEM). The results show a correlation between the triangular terrace shaped surface defects and an hexagonal etch pit arising from threading dislocations, linear shaped surface defects and elliptical shaped etch pits arising from basal plane dislocations. Through the observation of the sample from two orthogonal directions via the MD-STEM technique, a basal plane dislocation is found to dissociate into an extended dislocation bound by two partial dislocations. A protocol developed and presented in this paper enables one to correlate near surface defects of a 4H-SiC wafer with the root cause dislocations giving rise to those surface defects. © The Author 2017. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Large area ultraviolet photodetector on surface modified Si:GaN layers

NASA Astrophysics Data System (ADS)

Anitha, R.; R., Ramesh; Loganathan, R.; Vavilapalli, Durga Sankar; Baskar, K.; Singh, Shubra

2018-03-01

Unique features of semiconductor based heterostructured photoelectric devices have drawn considerable attention in the recent past. In the present work, large area UV photodetector has been fabricated utilizing interesting Zinc oxide microstructures on etched Si:GaN layers. The surface of Si:GaN layer grown by metal organic chemical vapor deposition method on sapphire has been modified by chemical etching to control the microstructure. The photodetector exhibits response to Ultraviolet light only. Optimum etching of Si:GaN was required to exhibit higher responsivity (0.96 A/W) and detectivity (∼4.87 × 109 Jones), the two important parameters for a photodetector. Present method offers a tunable functionality of photodetector through modification of top layer microstructure. A comparison with state of art materials has also been presented.

Modified TMAH based etchant for improved etching characteristics on Si{1 0 0} wafer

NASA Astrophysics Data System (ADS)

Swarnalatha, V.; Narasimha Rao, A. V.; Ashok, A.; Singh, S. S.; Pal, P.

2017-08-01

Wet bulk micromachining is a popular technique for the fabrication of microstructures in research labs as well as in industry. However, increasing the throughput still remains an active area of research, and can be done by increasing the etching rate. Moreover, the release time of a freestanding structure can be reduced if the undercutting rate at convex corners can be improved. In this paper, we investigate a non-conventional etchant in the form of NH2OH added in 5 wt% tetramethylammonium hydroxide (TMAH) to determine its etching characteristics. Our analysis is focused on a Si{1 0 0} wafer as this is the most widely used in the fabrication of planer devices (e.g. complementary metal oxide semiconductors) and microelectromechanical systems (e.g. inertial sensors). We perform a systematic and parametric analysis with concentrations of NH2OH varying from 5% to 20% in step of 5%, all in 5 wt% TMAH, to obtain the optimum concentration for achieving improved etching characteristics including higher etch rate, undercutting at convex corners, and smooth etched surface morphology. Average surface roughness (R a), etch depth, and undercutting length are measured using a 3D scanning laser microscope. Surface morphology of the etched Si{1 0 0} surface is examined using a scanning electron microscope. Our investigation has revealed a two-fold increment in the etch rate of a {1 0 0} surface with the addition of NH2OH in the TMAH solution. Additionally, the incorporation of NH2OH significantly improves the etched surface morphology and the undercutting at convex corners, which is highly desirable for the quick release of microstructures from the substrate. The results presented in this paper are extremely useful for engineering applications and will open a new direction of research for scientists in both academic and industrial laboratories.

Surface-pattern geometry, topography, and chemical modifications during KrF excimer laser micro-drilling of p-type Si (111) wafers in ambient environment of HCl fumes in air

NASA Astrophysics Data System (ADS)

Zakria Butt, Muhammad; Saher, Sobia; Waqas Khaliq, Muhammad; Siraj, Khurram

2016-11-01

Eight mirror-like polished p-type Si (111) wafers were irradiated with 100, 200, 300, 400, 800, 1200, 1600, and 2000 KrF excimer laser pulses in ambient environment of HCl fumes in air. The laser parameters were: wavelength = 248 nm, pulse width = 20 ns, pulse energy = 20 mJ, and repetition rate = 20 Hz. For each set of laser pulses, characterization of the rectangular etched patterns formed on target surface was done by optical/scanning electron microscopy, XRD, and EDX techniques. The average etched depth increased with the increase in number of laser pulses from 100 to 2000 in accord with Sigmoidal (Boltzmann) function, whereas the average etch rate followed an exponential decay with the increase in number of laser pulses. However, the etched area, maximum etched depth, and maximum etch rate were found to increase linearly with the number of laser pulses, but the rate of increase was faster for 100-400 laser pulses (region I) than that for 800-2000 laser pulses (region II). The elemental composition for each etched-pattern determined by EDX shows that both O and Cl contents increase progressively with the increase in the number of laser shots in region I. However, in region II both O and Cl contents attain saturation values of about 39.33 wt.% and 0.14 wt.%, respectively. Perforation of Si wafers was achieved on irradiation with 1200-2000 laser pulses. XRD analysis confirmed the formation of SiO2, SiCl2 and SiCl4 phases in Si (111) wafers due to chemical reaction of silicon with both HCl fumes and oxygen in air.

Recovery of Mo/Si multilayer coated optical substrates

DOEpatents

Baker, Sherry L.; Vernon, Stephen P.; Stearns, Daniel G.

1997-12-16

Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

Recovery of Mo/Si multilayer coated optical substrates

DOEpatents

Baker, S.L.; Vernon, S.P.; Stearns, D.G.

1997-12-16

Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO{sub 2} overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates. 5 figs.

Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Kuo, Meng-Wei

Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350°C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.

Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer

NASA Astrophysics Data System (ADS)

Nagata, Masahiro; Shirahama, Ryouya; Duangchan, Sethavut; Baba, Akiyoshi

2018-06-01

We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-mean-square surface roughness of approximately 0.2–0.3 nm) and an ultrathin SiO2 bonding layer at an accuracy of approximately 5 nm in thickness to fabricate a silicon-on-diamond substrate (SOD). We also investigated a plasma activation method on a SiO2 surface using various gases. We found that O2 plasma activation is more suitable for the bonding between SiO2 and Si than N2 or Ar plasma activation. We speculate that the concentration of hydroxyl groups on the SiO2 surface was increased by O2 plasma activation. We fabricated the SOD substrate with an ultrathin (15 nm in thickness) SiO2 bonding layer using the sputter etching and O2 plasma activation methods.

Etching Behavior of Aluminum Alloy Extrusions

NASA Astrophysics Data System (ADS)

Zhu, Hanliang

2014-11-01

The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

NASA Astrophysics Data System (ADS)

Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

2017-10-01

Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

Optimization of Gas Composition Used in Plasma Chemical Vaporization Machining for Figuring of Reaction-Sintered Silicon Carbide with Low Surface Roughness.

PubMed

Sun, Rongyan; Yang, Xu; Ohkubo, Yuji; Endo, Katsuyoshi; Yamamura, Kazuya

2018-02-05

In recent years, reaction-sintered silicon carbide (RS-SiC) has been of interest in many engineering fields because of its excellent properties, such as its light weight, high rigidity, high heat conductance and low coefficient of thermal expansion. However, RS-SiC is difficult to machine owing to its high hardness and chemical inertness and because it contains multiple components. To overcome the problem of the poor machinability of RS-SiC in conventional machining, the application of atmospheric-pressure plasma chemical vaporization machining (AP-PCVM) to RS-SiC was proposed. As a highly efficient and damage-free figuring technique, AP-PCVM has been widely applied for the figuring of single-component materials, such as Si, SiC, quartz crystal wafers, and so forth. However, it has not been applied to RS-SiC since it is composed of multiple components. In this study, we investigated the AP-PCVM etching characteristics for RS-SiC by optimizing the gas composition. It was found that the different etching rates of the different components led to a large surface roughness. A smooth surface was obtained by applying the optimum gas composition, for which the etching rate of the Si component was equal to that of the SiC component.

Dislocation reduction in heteroepitaxial Ge on Si using SiO{sub 2} lined etch pits and epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leonhardt, Darin; Han, Sang M.

2011-09-12

We report a technique that significantly reduces threading dislocations in Ge on Si heteroepitaxy. Germanium is first grown on Si and etched to produce pits in the surface where threading dislocations terminate. Further processing leaves a layer of SiO{sub 2} only within etch pits. Subsequent selective epitaxial Ge growth results in coalescence above the SiO{sub 2}. The SiO{sub 2} blocks the threading dislocations from propagating into the upper Ge epilayer. With annealed Ge films grown on Si, the said method reduces the defect density from 2.6 x 10{sup 8} to 1.7 x 10{sup 6} cm{sup -2}, potentially making the layermore » suitable for electronic and photovoltaic devices.« less

Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

NASA Astrophysics Data System (ADS)

Min, Jae-Ho; Lee, Gyeo-Re; Lee, Jin-Kwan; Moon, Sang Heup; Kim, Chang-Koo

2004-05-01

The dependences of etch rates on the angle of ions incident on the substrate surface in four plasma/substrate systems that constitute the advanced Bosch process were investigated using a Faraday cage designed for the accurate control of the ion-incident angle. The four systems, established by combining discharge gases and substrates, were a SF6/poly-Si, a SF6/fluorocarbon polymer, an O2/fluorocarbon polymer, and a C4F8/Si. In the case of SF6/poly-Si, the normalized etch rates (NERs), defined as the etch rates normalized by the rate on the horizontal surface, were higher at all angles than values predicted from the cosine of the ion-incident angle. This characteristic curve shape was independent of changes in process variables including the source power and bias voltage. Contrary to the earlier case, the NERs for the O2/polymer decreased and eventually reached much lower values than the cosine values at angles between 30° and 70° when the source power was increased and the bias voltage was decreased. On the other hand, the NERs for the SF6/polymer showed a weak dependence on the process variables. In the case of C4F8/Si, which is used in the Bosch process for depositing a fluorocarbon layer on the substrate surface, the deposition rate varied with the ion incident angle, showing an S-shaped curve. These characteristic deposition rate curves, which were highly dependent on the process conditions, could be divided into four distinct regions: a Si sputtering region, an ion-suppressed polymer deposition region, an ion-enhanced polymer deposition region, and an ion-free polymer deposition region. Based on the earlier characteristic angular dependences of the etch (or deposition) rates in the individual systems, ideal process conditions for obtaining an anisotropic etch profile in the advanced Bosch process are proposed. .

Feature Profile Evolution of SiO2 Trenches In Fluorocarbon Plasmas

NASA Technical Reports Server (NTRS)

Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arunachalam, Valli; Rauf, Shahid; Coronell, Dan; Carroll, Carol W. (Technical Monitor)

1999-01-01

Etching of silicon microstructures for semiconductor manufacturing in chlorine plasmas has been well characterized. The etching proceeds in a two-part process, where the chlorine neutrals passivate the Si surface and then the ions etch away SiClx. However, etching in more complicated gas mixtures and materials, such as etching of SiO2 in Ar/C4F8, requires knowledge of the ion and neutral distribution functions as a function of angle and velocity, in addition to modeling the gas surface reactions. In order to address these needs, we have developed and integrated a suite of models to simulate the etching process from the plasma reactor level to the feature profile evolution level. This arrangement allows for a better understanding, control, and prediction of the influence of equipment level process parameters on feature profile evolution. We are currently using the HPEM (Hybrid Plasma Equipment Model) and PCMCM (Plasma Chemistry Monte Carlo Model) to generate plasma properties and ion and neutral distribution functions for argon/fluorocarbon discharges in a GEC Reference Cell. These quantities are then input to the feature scale model, Simulation of Profile Evolution by Level Sets (SPELS). A surface chemistry model is used to determine the interaction of the incoming species with the substrate material and simulate the evolution of the trench profile. The impact of change of gas pressure and inductive power on the relative flux of CFx and F to the wafer, the etch and polymerization rates, and feature profiles will be examined. Comparisons to experimental profiles will also be presented.

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

1987-01-01

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

1989-01-01

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Decalin-assisted light emitting porous Si formation and its optical, surface and morphological properties

NASA Astrophysics Data System (ADS)

Karatutlu, Ali; Istengir, Sumeyra; Cosgun, Sedat; Seker, Isa; Unal, Bayram

2017-11-01

In this research paper, light emitting porous silicon (Lep-Si) samples were fabricated by a surfactant-mediated chemical stain etching solution in order to form homogenous luminescent nanostructures at room temperature. As an industrially important solvent, decalin (decahydronaphtalene) was used as a surfactant in the HF/HNO3 solutions in order to control the etching process. Morphological, surface and optical properties of the Lep-Si samples were examined using atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL) spectroscopy, and laser scanning confocal microscopy (LSCM) techniques. These characterization techniques were correlated with the various etching times including depth dependent luminescence profiles for the first time. We report the optimum conditions for production of the most efficient Lep-Si using decalin (decahydronaphtalene) and possible structural origins of light emission using the depth dependent luminescence measurements.

Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam

NASA Astrophysics Data System (ADS)

Wei, Long; Tabuki, Yasushi; Tanigawa, Shoichiro

1993-01-01

Defects in reactive ion-etched Si have been investigated by means of a slow positron beam. A thin carbon-containing film (<30 Å) was formed on the Si surface after reactive ion etching (RIE). Vacancy-type defects, which were estimated to distribute over 1200 Å in depth by numerical fitting using the positron trapping model, were observed in the damaged subsurface region of Si. Aside from ion bombardment, ultraviolet radiation is also presumed to affect the formation of vacancies, interstitials in oxide and the formation of vacancies in Si substrate. The ionization-enhanced diffusion (IED) mechanism is expected to promote the diffusion of vacancies and interstitials into Si substrate.

High efficiency silicon nanowire/organic hybrid solar cells with two-step surface treatment.

PubMed

Wang, Jianxiong; Wang, Hao; Prakoso, Ari Bimo; Togonal, Alienor Svietlana; Hong, Lei; Jiang, Changyun; Rusli

2015-03-14

A simple two-step surface treatment process is proposed to boost the efficiency of silicon nanowire/PEDOT:PSS hybrid solar cells. The Si nanowires (SiNWs) are first subjected to a low temperature ozone treatment to form a surface sacrificial oxide, followed by a HF etching process to partially remove the oxide. TEM investigation demonstrates that a clean SiNW surface is achieved after the treatment, in contrast to untreated SiNWs that have Ag nanoparticles left on the surface from the metal-catalyzed etching process that is used to form the SiNWs. The cleaner SiNW surface achieved and the thin layer of residual SiO2 on the SiNWs have been found to improve the performance of the hybrid solar cells. Overall, the surface recombination of the hybrid SiNW solar cells is greatly suppressed, resulting in a remarkably improved open circuit voltage of 0.58 V. The power conversion efficiency has also increased from about 10% to 12.4%. The two-step surface treatment method is promising in enhancing the photovoltaic performance of the hybrid silicon solar cells, and can also be applied to other silicon nanostructure based solar cells.

Process for Smoothing an Si Substrate after Etching of SiO2

NASA Technical Reports Server (NTRS)

Turner, Tasha; Wu, Chi

2003-01-01

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ansah-Antwi, KwaDwo Konadu, E-mail: kakadee@gmail.com; Chua, Soo Jin; Department of Electrical and Computer Engineering, National University of Singapore, E4-5-45, 4 Engineering Drive 3, Singapore 117576

2015-11-15

The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holesmore » resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.« less

Fabrication of low reflective nanopore-type black Si layer using one-step Ni-assisted chemical etching for Si solar cell application

NASA Astrophysics Data System (ADS)

Takaloo, AshkanVakilipour; Kolahdouz, Mohammadreza; Poursafar, Jafar; Es, Firat; Turan, Rasit; Ki-Joo, Seung

2018-03-01

Nanotextured Si fabricated through metal-assisted chemical etching (MACE) technique exhibits a promising potential for producing antireflective layer for photovoltaic (PV) application. In this study, a novel single-step nickel (Ni) assisted etching technique was applied to produce an antireflective, nonporous Si (black Si) in an aqueous solution containing hydrofluoric acid (HF), hydrogen peroxide (H2O2) and NiSO4 at 40 °C. Field emission scanning electron microscope was used to characterize different morphologies of the textured Si. Optical reflection measurements of samples were carried out to compare the reflectivity of different morphologies. Results indicated that vertical as well as horizontal pores with nanosized diameters were bored in the Si wafer after 1 h treatment in the etching solution containing different molar ratios of H2O2 to HF. Increasing H2O2 concentration in electrochemical etching solution had a considerable influence on the morphology due to higher injection of positive charges from Ni atoms onto the Si surface. Optimized concentration of H2O2 led to formation of an antireflective layer with 2.1% reflectance of incident light.

Tunable Nanoantennas for Surface Enhanced Infrared Absorption Spectroscopy by Colloidal Lithography and Post-Fabrication Etching

NASA Astrophysics Data System (ADS)

Chen, Kai; Duy Dao, Thang; Nagao, Tadaaki

2017-03-01

We fabricated large-area metallic (Al and Au) nanoantenna arrays on Si substrates using cost-effective colloidal lithography with different micrometer-sized polystyrene spheres. Variation of the sphere size leads to tunable plasmon resonances in the middle infrared (MIR) range. The enhanced near-fields allow us to detect the surface phonon polaritons in the natural SiO2 thin layers. We demonstrated further tuning capability of the resonances by employing dry etching of the Si substrates with the nanoantennas acting as the etching masks. The effective refractive index of the nanoantenna surroundings is efficiently decreased giving rise to blueshifts of the resonances. In addition, partial removal of the Si substrates elevates the nanoantennas from the high-refractive-index substrates making more enhanced near-fields accessible for molecular sensing applications as demonstrated here with surface-enhanced infrared absorption (SEIRA) spectroscopy for a thin polymer film. We also directly compared the plasmonic enhancement from the Al and Au nanoantenna arrays.

Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

NASA Astrophysics Data System (ADS)

Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

2018-04-01

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

Cryo-Etched Black Silicon for Use as Optical Black

NASA Technical Reports Server (NTRS)

Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

2011-01-01

Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

Structure, morphology, and photoluminescence of porous Si nanowires: effect of different chemical treatments

PubMed Central

2013-01-01

The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. The Si nanowires that result from the etching of a highly doped p-type Si wafer by MACE are fully porous, and as a result, they show intense photoluminescence (PL) at room temperature, the characteristics of which depend on the surface passivation of the Si nanocrystals composing the nanowires. SiNWs with a hydrogen-terminated nanostructured surface resulting from a chemical treatment with a hydrofluoric acid (HF) solution show red PL, the maximum of which is blueshifted when the samples are further chemically oxidized in a piranha solution. This blueshift of PL is attributed to localized states at the Si/SiO2 interface at the shell of Si nanocrystals composing the porous SiNWs, which induce an important pinning of the electronic bandgap of the Si material and are involved in the recombination mechanism. After a sequence of HF/piranha/HF treatment, the SiNWs are almost fully dissolved in the chemical solution, which is indicative of their fully porous structure, verified also by transmission electron microscopy investigations. It was also found that a continuous porous Si layer is formed underneath the SiNWs during the MACE process, the thickness of which increases with the increase of etching time. This supports the idea that porous Si formation precedes nanowire formation. The origin of this effect is the increased etching rate at sites with high dopant concentration in the highly doped Si material. PMID:24025542

Synthesis and catalytic performance of SiO2@Ni and hollow Ni microspheres

NASA Astrophysics Data System (ADS)

Liu, Xin; Liu, Yanhua; Shi, Xueting; Yu, Zhengyang; Feng, Libang

2016-11-01

Nickel (Ni) catalyst has been widely used in catalytic reducing reactions such as catalytic hydrogenation of organic compounds and catalytic reduction of organic dyes. However, the catalytic efficiency of pure Ni is low. In order to improve the catalytic performance, Ni nanoparticle-loaded microspheres can be developed. In this study, we have prepared Ni nanoparticle-loaded microspheres (SiO2@Ni) and hollow Ni microspheres using two-step method. SiO2@Ni microspheres with raspberry-like morphology and core-shell structure are synthesized successfully using SiO2 microsphere as a template and Ni2+ ions are adsorbed onto SiO2 surfaces via electrostatic interaction and then reduced and deposited on surfaces of SiO2 microspheres. Next, the SiO2 cores are removed by NaOH etching and the hollow Ni microspheres are prepared. The NaOH etching time does no have much influence on the crystal structure, shape, and surface morphology of SiO2@Ni; however, it can change the phase composition evidently. The hollow Ni microspheres are obtained when the NaOH etching time reaches 10 h and above. The as-synthesized SiO2@Ni microspheres exhibit much higher catalytic performance than the hollow Ni microspheres and pure Ni nanoparticles in the catalytic reduction of methylene blue. Meanwhile, the SiO2@Ni catalyst has high stability and hence it can be recycled for reuse.

Simulation of SiO2 etching in an inductively coupled CF4 plasma

NASA Astrophysics Data System (ADS)

Xu, Qing; Li, Yu-Xing; Li, Xiao-Ning; Wang, Jia-Bin; Yang, Fan; Yang, Yi; Ren, Tian-Ling

2017-02-01

Plasma etching technology is an indispensable processing method in the manufacturing process of semiconductor devices. Because of the high fluorine/carbon ratio of CF4, the CF4 gas is often used for etching SiO2. A commercial software ESI-CFD is used to simulate the process of plasma etching with an inductively coupled plasma model. For the simulation part, CFD-ACE is used to simulate the chamber, and CFD-TOPO is used to simulate the surface of the sample. The effects of chamber pressure, bias voltage and ICP power on the reactant particles were investigated, and the etching profiles of SiO2 were obtained. Simulation can be used to predict the effects of reaction conditions on the density, energy and angular distributions of reactant particles, which can play a good role in guiding the etching process.

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

NASA Astrophysics Data System (ADS)

Ono, Kouichi; Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji

2017-10-01

Atomic- or nanometer-scale roughness on feature surfaces has become an important issue to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases, smoothing of initially rough surfaces is required for planarization of film surfaces, and controlled surface roughening is required for maskless fabrication of organized nanostructures on surfaces. An understanding, under what conditions plasma etching results in surface roughening and/or smoothing and what are the mechanisms concerned, is of great technological as well as fundamental interest. In this article, we review recent developments in the experimental and numerical study of the formation and evolution of surface roughness (or surface morphology evolution such as roughening, smoothing, and ripple formation) during plasma etching of Si, with emphasis being placed on a deeper understanding of the mechanisms or plasma-surface interactions that are responsible for. Starting with an overview of the experimental and theoretical/numerical aspects concerned, selected relevant mechanisms are illustrated and discussed primarily on the basis of systematic/mechanistic studies of Si etching in Cl-based plasmas, including noise (or stochastic roughening), geometrical shadowing, surface reemission of etchants, micromasking by etch inhibitors, and ion scattering/chanelling. A comparison of experiments (etching and plasma diagnostics) and numerical simulations (Monte Carlo and classical molecular dynamics) indicates a crucial role of the ion scattering or reflection from microscopically roughened feature surfaces on incidence in the evolution of surface roughness (and ripples) during plasma etching; in effect, the smoothing/non-roughening condition is characterized by reduced effects of the ion reflection, and the roughening-smoothing transition results from reduced ion reflections caused by a change in the predominant ion flux due to that in plasma conditions. Smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces during etching (normal ion incidence) and formation of surface ripples by plasma etching (off-normal ion incidence) are also presented and discussed in this context.

Micro-Fabricated Perforated Polymer Devices for Long-Term Drug Delivery

DTIC Science & Technology

2011-02-24

conventional manufacturing methods. We have used a biocompatible polymer ( polyimide ) to serve as a reservoir and photolithographically produced microholes for...RIE with ICP source was used to etch holes on polyimide surface. Biocompatible materials Ti, SiO2 and SiNx were studied as mask materials. Ti film...used to fabricate micro holes on the surface of polyimide tubes. Several materials have been used to form the etching mask, including titanium film

Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong; Ji, An; Yang, Fuhua

2014-03-01

The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Lee, Jaesoong; Ni, Xianfeng; Leach, Jacob; Özgür, Ümit; Morkoç, Hadis

2011-02-01

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

SEMICONDUCTOR TECHNOLOGY Texturization of mono-crystalline silicon solar cells in TMAH without the addition of surfactant

NASA Astrophysics Data System (ADS)

Weiying, Ou; Yao, Zhang; Hailing, Li; Lei, Zhao; Chunlan, Zhou; Hongwei, Diao; Min, Liu; Weiming, Lu; Jun, Zhang; Wenjing, Wang

2010-10-01

Etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without the addition of surfactant. Experiments were carried out in different TMAH concentrations at different temperatures for different etching times. The surface phenomena, etching rates, surface morphology and surface reflectance were analyzed. Experimental results show that the resulting surface covered with uniform pyramids can be realized with a small change in etching rates during the etching process. The etching mechanism is explained based on the experimental results and the theoretical considerations. It is suggested that all the components in the TMAH solutions play important roles in the etching process. Moreover, TMA+ ions may increase the wettability of the textured surface. A good textured surface can be obtained in conditions where the absorption of OH-/H2O is in equilibrium with that of TMA+/SiO2 (OH)22-.

Solution-processed photodetectors from colloidal silicon nano/micro particle composite.

PubMed

Tu, Chang-Ching; Tang, Liang; Huang, Jiangdong; Voutsas, Apostolos; Lin, Lih Y

2010-10-11

We demonstrate solution-processed photodetectors composed of heavy-metal-free Si nano/micro particle composite. The colloidal Si particles are synthesized by electrochemical etching of Si wafers, followed by ultra-sonication to pulverize the porous surface. With alkyl ligand surface passivation through hydrosilylation reaction, the particles can form a stable colloidal suspension which exhibits bright photoluminescence under ultraviolet excitation and a broadband extinction spectrum due to enhanced scattering from the micro-size particles. The efficiency of the thin film photodetectors has been substantially improved by preventing oxidation of the particles during the etching process.

Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Mishkat-Ul-Masabih, Saadat; Leonard, John T.; Feezell, Daniel F.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on nonpolar GaN substrates, using a KOH/K2S2O8 solution and illuminated by a Xe arc lamp or a Q-switched 355 nm laser. The etch rate with the arc lamp decreased as the doping concentration increased, and the etching stopped for concentrations above 7.7 × 1018 cm-3. The high peak intensity of the Q-switched laser extended the etchable concentration to 2.4 × 1019 cm-3, with an etch rate of 14 nm/min. Compositionally selective etching was demonstrated, with an RMS surface roughness of 1.6 nm after etching down to an n-Al0.20Ga0.80N etch stop layer.

New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2005-01-01

Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

Observation and measurement of negative differential resistance on PtSi Schottky junctions on porous silicon.

PubMed

Banihashemian, Seyedeh Maryam; Hajghassem, Hassan; Erfanian, Alireza; Aliahmadi, Majidreza; Mohtashamifar, Mansor; Mosakazemi, Seyed Mohamadhosein

2010-01-01

Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I-V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.

The Selective Epitaxy of Silicon at Low Temperatures.

NASA Astrophysics Data System (ADS)

Lou, Jen-Chung

1991-01-01

This dissertation has developed a process for the selective epitaxial growth (SEG) of silicon at low temperatures using a dichlorosilane-hydrogen mixture in a hot-wall low pressure chemical vapor deposition (LPCVD) reactor. Some basic issues concerning the quality of epilayers --substrate preparation, ex-situ and in-situ cleaning, and deposition cycle, have been studied. We find it necessary to use a plasma etch to open epitaxial windows for the SEG of Si. A cycled plasma etch, a thin sacrificial oxide growth, and an oxide etching step can completely remove plasma-etch-induced surface damage and contaminants, which result in high quality epilayers. A practical wafer cleaning step is developed for low temperature Si epitaxial growth. An ex-situ HF vapor treatment can completely remove chemical oxide from the silicon surface and retard the reoxidation of the silicon surface. An in-situ low-concentration DCS cycle can aid in decomposition of surface oxide during a 900 ^circC H_2 prebake step. An HF vapor treatment combined with a low-concentration of DCS cycle consistently achieves defect-free epilayers at 850^circC and lower temperatures. We also show that a BF_sp{2}{+ } or F^+ ion implantation is a potential ex-situ wafer cleaning process for SEG of Si at low temperatures. The mechanism for the formation of surface features on Si epilayers is also discussed. Based on O ^+ ion implantation, we showed that the oxygen incorporation in silicon epilayers suppresses the Si growth rate. Therefore, we attribute the formation of surface features to the local reduction of the Si growth rate due to the dissolution of oxide islands at the epi/substrate interface. Finally, with this developed process for the SEG of silicon, defect-free overgrown epilayers are also obtained. This achievement demonstrates the feasibility for the future silicon-on-oxide (SOI) manufacturing technology.

Singlet Oxygen Generation Mediated By Silicon Nanocrystal Assemblies

DTIC Science & Technology

2011-01-01

Lattice fringes in Fig.3 d correspond to the (111) atomic planes of Si nanocrystals. Length scales are indicated. Downscaling of the stain etched PSi...intensity of 1W/cm2 in a time scale of a few hours a monolayer of oxygen is formed on the surface of Si nanocrystals. Fig. 8. Infrared absorption...solution. Fig. 10. PL intensity as a function of continuously prolonged etching of Si powder. Inset: PL suppression level (can be scaled as singlet

Properties of nanocrystalline Si layers embedded in structure of solar cell

NASA Astrophysics Data System (ADS)

Jurečka, Stanislav; Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

2017-12-01

Suppression of spectral reflectance from the surface of solar cell is necessary for achieving a high energy conversion efficiency. We developed a simple method for forming nanocrystalline layers with ultralow reflectance in a broad range of wavelengths. The method is based on metal assisted etching of the silicon surface. In this work, we prepared Si solar cell structures with embedded nanocrystalline layers. The microstructure of embedded layer depends on the etching conditions. We examined the microstructure of the etched layers by a transmission electron microscope and analysed the experimental images by statistical and Fourier methods. The obtained results provide information on the applied treatment operations and can be used to optimize the solar cell forming procedure.

Determination of total fluoride in HF/HNO3/H2SiF6 etch solutions by new potentiometric titration methods.

PubMed

Weinreich, Wenke; Acker, Jörg; Gräber, Iris

2007-03-30

In the photovoltaic industry the etching of silicon in HF/HNO(3) solutions is a decisive process for cleaning wafer surfaces or to produce certain surface morphologies like polishing or texturization. With regard to cost efficiency, a maximal utilisation of etch baths in combination with highest quality and accuracy is strived. To provide an etch bath control realised by a replenishment with concentrated acids the main constituents of these HF/HNO(3) etch solutions including the reaction product H(2)SiF(6) have to be analysed. Two new methods for the determination of the total fluoride content in an acidic etch solution based on the precipitation titration with La(NO(3))(3) are presented within this paper. The first method bases on the proper choice of the reaction conditions, since free fluoride ions have to be liberated from HF and H(2)SiF(6) at the same time to be detected by a fluoride ion-selective electrode (F-ISE). Therefore, the sample is adjusted to a pH of 8 for total cleavage of the SiF(6)(2-) anion and titrated in absence of buffers. In a second method, the titration with La(NO(3))(3) is followed by a change of the pH-value using a HF resistant glass-electrode. Both methods provide consistent values, whereas the analysis is fast and accurate, and thus, applicable for industrial process control.

A survey of some metallographic etching reagents for restoration of obliterated engraved marks on aluminium-silicon alloy surfaces.

PubMed

Uli, Norjaidi; Kuppuswamy, R; Amran, Mohd Firdaus Che

2011-05-20

A brief survey to assess the sensitivity and efficacy of some common etching reagents for revealing obliterated engraved marks on Al-Si alloy surfaces is presented. Experimental observations have recommended use of alternate swabbing of 10% NaOH and 10% HNO(3) on the obliterated surfaces for obtaining the desired results. The NaOH etchant responsible for bringing back the original marks resulted in the deposition of some dark coating that has masked the recovered marks. The coating had been well removed by dissolving it in HNO(3) containing 10-20% acid. However, the above etching procedure was not effective on aluminium (99% purity) and Al-Zn-Mg-Cu alloy surfaces. Also the two reagents (i) immersion in 10% aq. phosphoric acid and (ii) alternate swabbing of 60% HCl and 40% NaOH suggested earlier for high strength Al-Zn-Mg-Cu alloys [23] were quite ineffective on Al-Si alloys. Thus different aluminium alloys needed different etching treatments for successfully restoring the obliterated marks. Al-Si alloys used in casting find wide applications especially in the manufacture of engine blocks of motor vehicles. Hence, the results presented in this paper are of much relevance in serial number restoration problems involving this alloy. Copyright © 2010 Elsevier Ireland Ltd. All rights reserved.

Strong light absorption capability directed by structured profile of vertical Si nanowires

NASA Astrophysics Data System (ADS)

Chaliyawala, Harsh A.; Ray, Abhijit; Pati, Ranjan K.; Mukhopadhyay, Indrajit

2017-11-01

Si nanowire arrays (SiNWAs) with random fractal geometry was fabricated using fast, mask-less, non-lithographic and facile approach by incorporating metal assisted electroless etching of n-type Si (111) substrates. The FESEM images demonstrate the formation of nano-porous surfaces that provide effective path for the incoming light to get trapped into the cavity of nanowires. The length of NWs increases from ∼1 to 10 μm with increase in the etching time having a diameter in the range of ∼25-82 nm. A transformation from zero to first order kinetics after a prolonged etching has been determined. The synthesized SiNWAs show high light trapping properties, including a maximum photon absorption across the entire visible and near IR range below the band gap of Si. The SiNWAs etched for 15 min exhibit extremely low specular and total reflectance of ∼0.2% and 4.5%, respectively over a broadband of wavelength. The reduction in the reflection loss is accompanied with the gradient of refractive index from air to Si substrate as well as due to the sub-wavelength structures, which manifests the light scattering effect. The COMSOL multiphysics simulation has been performed to study the high broadband light absorption capability in terms of the strong localized light field confinement by varying the length of the nanowire. Moreover, the SiNWs induces the dewetting ability at the solid/liquid interface and enhances the superhydrophobicity. Furthermore, a maximum length scale of 100-200 nm manifests a strong heterogeneity along the planar section of the surface of SiNWs. The study thus provides an insight on the light propagation into the random fractal geometries of Si nanowires. These outstanding properties should contribute to the structural optimization of various optoelectronic and photonic devices.

Advanced Simulation Technology to Design Etching Process on CMOS Devices

NASA Astrophysics Data System (ADS)

Kuboi, Nobuyuki

2015-09-01

Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

2012-09-15

The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (-108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate biasmore » reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiCl{sub x} (x = 1 - 4), many Si-oxychloride fragments with m/e = 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex 'recycling' process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl{sub 3} sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e = 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.« less

Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pyatilova, O. V., E-mail: 5ilova87@gmail.com; Gavrilov, S. A.; Shilyaeva, Yu. I.

The formation of porous silicon (por-Si) layers by the galvanic etching of single-crystal Si samples (doped with boron or phosphorus) in an HF/C{sub 2}H{sub 5}OH/H{sub 2}O{sub 2} solution is investigated. The por-Si layers are analyzed by the capillary condensation of nitrogen and scanning electron microscopy (SEM). The dependences of the morphological characteristics of por-Si (pore diameter, specific surface area, pore volume, and thickness of the pore walls), which determine the por-Si combustion kinetics, on the dopant type and initial wafer resistivity are established.

Silicon nanostructure arrays prepared by single step metal assisted chemical etching from single crystal wafer

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan; Das, Debajyoti

2018-04-01

Arrays of silicon nanostructures have been produced by single step Metal Assisted Chemical Etching (MACE) of single crystal Si-wafers at room temp and normal atmospheric condition. By studying optical and structural properties of the silicon nanowire like structures synthesized by Ag catalyst assisted chemical etching, a significant change in the reflectance spectra has been obtained leading to a gross reduction in reflectance from ˜31% to less than 1%. In comparison with bulk c-Si, the surface areas of the nanostructured samples have been increased significantly with the etching time, leading to an efficient absorption of light, favorable for photovoltaic applications.

Electroplating chromium on CVD SiC and SiCf-SiC advanced cladding via PyC compatibility coating

NASA Astrophysics Data System (ADS)

Ang, Caen; Kemery, Craig; Katoh, Yutai

2018-05-01

Electroplating Cr on SiC using a pyrolytic carbon (PyC) bond coat is demonstrated as an innovative concept for coating of advanced fuel cladding. The quantification of coating stress, SEM morphology, XRD phase analysis, and debonding test of the coating on CVD SiC and SiCf-SiC is shown. The residual tensile stress (by ASTM B975) of electroplated Cr is > 1 GPa prior to stress relaxation by microcracking. The stress can remove the PyC/Cr layer from SiC. Surface etching of ∼20 μm and roughening to Ra > 2 μm (by SEM observation) was necessary for successful adhesion. The debonding strength (by ASTM D4541) of the coating on SiC slightly improved from 3.6 ± 1.4 MPa to 5.9 ± 0.8 MPa after surface etching or machining. However, this improvement is limited due to the absence of an interphase, and integrated CVI processing may be required for further advancement.

GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

2015-04-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

Biomimetic artificial Si compound eye surface structures with broadband and wide-angle antireflection properties for Si-based optoelectronic applications

NASA Astrophysics Data System (ADS)

Leem, Jung Woo; Song, Young Min; Yu, Jae Su

2013-10-01

We report the biomimetic artificial silicon (Si) compound eye structures for broadband and wide-angle antireflection by integrating nanostructures (NSs) into periodically patterned microstructures (p-MSs) via thermal dewetting of gold and subsequent dry etching. The truncated cone microstructures with a two-dimensional hexagonal symmetry pattern were fabricated by photolithography and dry etching processes. The desirable shape and density of the nanostructures were obtained by controlled dewetting. The incorporation of p-MSs into the NS/Si surface further reduced the surface total reflectance over a wide wavelength range of 300-1030 nm at near normal incidence, indicating the average reflectance (Ravg) and solar weighted reflectance (RSWR) values of ~2.5% and 2%, respectively, compared to the only NSs on the flat Si surface (i.e., Ravg ~ 4.9% and RSWR ~ 4.5%). Additionally, the resulting structure improved the angle-dependent antireflection property due to its relatively omnidirectional shape, which exhibited the Ravg < 4.3% and RSWR < 3.7% in the wavelength region of 300-1100 nm even at a high incident light angle of 70° in the specular reflectance.We report the biomimetic artificial silicon (Si) compound eye structures for broadband and wide-angle antireflection by integrating nanostructures (NSs) into periodically patterned microstructures (p-MSs) via thermal dewetting of gold and subsequent dry etching. The truncated cone microstructures with a two-dimensional hexagonal symmetry pattern were fabricated by photolithography and dry etching processes. The desirable shape and density of the nanostructures were obtained by controlled dewetting. The incorporation of p-MSs into the NS/Si surface further reduced the surface total reflectance over a wide wavelength range of 300-1030 nm at near normal incidence, indicating the average reflectance (Ravg) and solar weighted reflectance (RSWR) values of ~2.5% and 2%, respectively, compared to the only NSs on the flat Si surface (i.e., Ravg ~ 4.9% and RSWR ~ 4.5%). Additionally, the resulting structure improved the angle-dependent antireflection property due to its relatively omnidirectional shape, which exhibited the Ravg < 4.3% and RSWR < 3.7% in the wavelength region of 300-1100 nm even at a high incident light angle of 70° in the specular reflectance. Electronic supplementary information (ESI) available: See DOI: 10.1039/c3nr02806b

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

PubMed

Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

2017-10-24

Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

NASA Astrophysics Data System (ADS)

Toor, Fatima; Miller, Jeffrey B.; Davidson, Lauren M.; Nichols, Logan; Duan, Wenqi; Jura, Michael P.; Yim, Joanne; Forziati, Joanne; Black, Marcie R.

2016-10-01

There are a range of different methods to generate a nanostructured surface on silicon (Si) but the most cost effective and optically interesting is the metal assisted wet chemical etching (MACE) (Koynov et al 2006 Appl. Phys. Lett. 88 203107). MACE of Si is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features or ‘black silicon’. MACE-fabricated nanowires (NWs) provide improved antireflection and light trapping functionality (Toor et al 2016 Nanoscale 8 15448-66) compared with the traditional ‘iso-texturing’ (Campbell and Green 1987 J. Appl. Phys. 62 243-9). The resulting lower reflection and improved light trapping can lead to higher short circuit currents in NW solar cells (Toor et al 2011 Appl. Phys. Lett. 99 103501). In addition, NW cells can have higher fill factors and voltages than traditionally processed cells, thus leading to increased solar cell efficiencies (Cabrera et al 2013 IEEE J. Photovolt. 3 102-7). MACE NW processing also has synergy with next generation Si solar cell designs, such as thin epitaxial-Si and passivated emitter rear contact (Toor et al 2016 Nanoscale 8 15448-66). While several companies have begun manufacturing black Si, and many more are researching these techniques, much of the work has not been published in traditional journals and is publicly available only through conference proceedings and patent publications, which makes learning the field challenging. There have been three specialized review articles published recently on certain aspects of MACE or black Si, but do not present a full review that would benefit the industry (Liu et al 2014 Energy Environ. Sci. 7 3223-63 Yusufoglu et al 2015 IEEE J. Photovolt. 5 320-8 Huang et al 2011 Adv. Mater. 23 285-308). In this feature article, we review the chemistry of MACE and explore how changing parameters in the wet etch process effects the resulting texture on the Si surface. Then we review efforts to increase the uniformity and reproducibility of the MACE process, which is critical for commercializing the black Si technology.

Kinetics of SiHCl3 chemical vapor deposition and fluid dynamic simulations.

PubMed

Cavallotti, Carlo; Masi, Maurizio

2011-09-01

Though most of the current silicon photovoltaic technology relies on trichlorosilane (SiHCl3) as a precursor gas to deposit Si, only a few studies have been devoted to the investigation of its gas phase and surface kinetics. In the present work we propose a new kinetic mechanism apt to describe the gas phase and surface chemistry active during the deposition of Si from SiHCl3. Kinetic constants of key reactions were either taken from the literature or determined through ab initio calculations. The capability of the mechanism to reproduce experimental data was tested through the implementation of the kinetic scheme in a fluid dynamic model and in the simulation of both deposition and etching of Si in horizontal reactors. The results of the simulations show that the reactivity of HCl is of key importance in order to control the Si deposition rate. When HCl reaches a critical concentration in the gas phase it starts etching the Si surface, so that the net deposition rate is the net sum of the adsorption rate of the gas phase precursors and the etching rate due to HCl. In these conditions the possibility to further deposit Si is directly related to the rate of consumption of HCl through its reaction with SiHCl3 to give SiCl4. The proposed reaction mechanism was implemented in a 3D fluid dynamic model of a simple Siemens reactor. The simulation results indicate that the proposed interpretation of the growth process applies also to this class of reactors, which operate in what can be defined as a mixed kinetic-transport controlled regime.

Ion beam figuring of CVD silicon carbide mirrors

NASA Astrophysics Data System (ADS)

Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

2017-11-01

Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

Influence of laser etching on enamel and dentin bond strength of Silorane System Adhesive.

PubMed

Ustunkol, Ildem; Yazici, A Ruya; Gorucu, Jale; Dayangac, Berrin

2015-02-01

The aim of this in vitro study was to evaluate the shear bond strength (SBS) of Silorane System Adhesive to enamel and dentin surfaces that had been etched with different procedures. Ninety freshly extracted human third molars were used for the study. After the teeth were embedded with buccal surfaces facing up, they were randomly divided into two groups. In group I, specimens were polished with a 600-grit silicon carbide (SiC) paper to obtain flat exposed enamel. In group II, the overlying enamel layer was removed and exposed dentin surfaces were polished with a 600-grit SiC paper. Then, the teeth in each group were randomly divided into three subgroups according to etching procedures: etched with erbium, chromium:yttrium-scandium-gallium-garnet laser (a), etched with 35% phosphoric acid (b), and non-etched (c, control). Silorane System Adhesive was used to bond silorane restorative to both enamel and dentin. After 24-h storage in distilled water at room temperature, a SBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The data were analyzed using two-way ANOVA and Bonferroni tests (p < 0.05). The highest SBS was found after additional phosphoric acid treatment in dentin groups (p < 0.05). There were no statistically significant differences between the laser-etched and non-etched groups in enamel and dentin (p > 0.05). The SBS of self-etch adhesive to dentin was not statistically different from enamel (p > 0.05). Phosphoric acid treatment seems the most promising surface treatment for increasing the enamel and dentin bond strength of Silorane System Adhesive.

Reflectance analysis of porosity gradient in nanostructured silicon layers

NASA Astrophysics Data System (ADS)

Jurečka, Stanislav; Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

2017-12-01

In this work we study optical properties of nanostructured layers formed on silicon surface. Nanostructured layers on Si are formed in order to reach high suppression of the light reflectance. Low spectral reflectance is important for improvement of the conversion efficiency of solar cells and for other optoelectronic applications. Effective method of forming nanostructured layers with ultralow reflectance in a broad interval of wavelengths is in our approach based on metal assisted etching of Si. Si surface immersed in HF and H2O2 solution is etched in contact with the Pt mesh roller and the structure of the mesh is transferred on the etched surface. During this etching procedure the layer density evolves gradually and the spectral reflectance decreases exponentially with the depth in porous layer. We analyzed properties of the layer porosity by incorporating the porosity gradient into construction of the layer spectral reflectance theoretical model. Analyzed layer is splitted into 20 sublayers in our approach. Complex dielectric function in each sublayer is computed by using Bruggeman effective media theory and the theoretical spectral reflectance of modelled multilayer system is computed by using Abeles matrix formalism. Porosity gradient is extracted from the theoretical reflectance model optimized in comparison to the experimental values. Resulting values of the structure porosity development provide important information for optimization of the technological treatment operations.

Controllable Si (100) micro/nanostructures by chemical-etching-assisted femtosecond laser single-pulse irradiation

NASA Astrophysics Data System (ADS)

Li, Xiaowei; Xie, Qian; Jiang, Lan; Han, Weina; Wang, Qingsong; Wang, Andong; Hu, Jie; Lu, Yongfeng

2017-05-01

In this study, silicon micro/nanostructures of controlled size and shape are fabricated by chemical-etching-assisted femtosecond laser single-pulse irradiation, which is a flexible, high-throughput method. The pulse fluence is altered to create various laser printing patterns for the etching mask, resulting in the sequential evolution of three distinct surface micro/nanostructures, namely, ring-like microstructures, flat-top pillar microstructures, and spike nanostructures. The characterized diameter of micro/nanostructures reveals that they can be flexibly tuned from the micrometer (˜2 μm) to nanometer (˜313 nm) scales by varying the laser pulse fluence in a wide range. Micro-Raman spectroscopy and transmission electron microscopy are utilized to demonstrate that the phase state changes from single-crystalline silicon (c-Si) to amorphous silicon (a-Si) after single-pulse femtosecond laser irradiation. This amorphous layer with a lower etching rate then acts as a mask in the wet etching process. Meanwhile, the on-the-fly punching technique enables the efficient fabrication of large-area patterned surfaces on the centimeter scale. This study presents a highly efficient method of controllably manufacturing silicon micro/nanostructures with different single-pulse patterns, which has promising applications in the photonic, solar cell, and sensors fields.

Focused ion beam micromachining of TiNi film on Si( 1 1 1 )

NASA Astrophysics Data System (ADS)

Xie, D. Z.; Ngoi, B. K. A.; Ong, A. S.; Fu, Y. Q.; Lim, B. H.

2003-11-01

Having an excellent shape memory effect, titanium-nickel (TiNi) thin films are often used for fabrication of microactuators in microelectromechanical systems. In this work, the Ga + focused ion beam (FIB) etching characteristics of TiNi thin films has been investigated. The thin films were deposited on Si(1 1 1) wafers by co-sputtering NiTi and Ti targets using a magnetron-sputtering system. Some patterns have been etched on the surface of the films by FIB. Atomic force microscopy has been used to analyze the surface morphology of the etched areas. It is found that the etched depth depends linearly on the ion dose per area with a slope of 0.259 μm/(nC/μm 2). However, the etching depth decreases with increasing the ion beam current. The root-mean-square (RMS) surface roughness changes nonlinearly with ion dose and reaches a minimum of about 5.00 nm at a dose of about 0.45 nC/μm 2. The RMS decreases with increasing ion beam current and reaches about 4.00 nm as the ion beam current is increased to 2 nA.

Molecular dynamics simulations of plasma-surface interactions

NASA Astrophysics Data System (ADS)

Vegh, Joseph James

Molecular dynamics (MD) simulations are carried out to examine the fundamental mechanisms of plasma-surface interactions for various systems of interest to the semiconductor industry. These include ion and radical bombardment simulations of silicon, model low-k dielectric materials, and hydrocarbon (HC) based model photoresist materials. Simulations of fluorocarbon (FC), fluorine, and argon ion etching of silicon are conducted to find conditions under which the steady state etch of Si in the presence of a FC surface layer occurs. By varying the FC/F/Ar + ratios over a range of conditions, a correlation between FC layer thickness and Si etch yield (EY) is obtained that agrees qualitatively with experimentally observed trends. Further examination of this system allows for a Si etch mechanism to be proposed. This mechanism is similar to that seen in previous Si etching simulations where FC films do not form. The FC layer is observed to fluctuate in thickness during steady state Si etch, as the result of competition between FC deposition and sputtering of relatively large (> 6 C atoms) FC clusters during Ar+ impacts. This cluster ejection process is seen in all of the systems studied, and the properties of these clusters (composition, size, kinetic energy, etc.) are examined and catalogued. Ar+ and H radical and ion bombardment of a methylated Si surface is simulated as a model of plasma etching of low-k dielectric materials. The mechanisms and product distributions observed for 300 K H radical bombardment agree well with experiment. The etch characteristics of Ar+ bombardment are examined as a function of ion energy, and the corresponding variations in surface structure at high ion fluence are characterized. Various HC polymer surfaces are studied under ion and radical bombardment to examine plasma species interactions with model photoresist materials. Simulations of 100 eV Ar+ bombardment of polystyrene (PS), poly(4-methylstyrene) (P4MS), and poly(alpha-methylstyrene) (PalphaMS) show that for all of these materials (which have similar chemical compositions: PS: (C8H 8)x, PalphaMS and P4MS: (C9H 10)x), a densely crosslinked, dehydrogenated damaged layer forms at high ion fluences that greatly reduces the sputter yield of the material. During the initial transient period of bombardment, PalphaMS shows sputter yields nearly twice as high as P4MS or PS; polymer structure can play a role during the early stages of etch. Both the initial and high fluence etch characteristics match those observed experimentally. Further, fluctuations from cell-to-cell are much higher for the PalphaMS simulations, which may correlate to the increased roughening observed experimentally for PalphaMS. Additional simulations are carried out to examine the effects of H and F radical addition during Ar+ bombardment of PS. Both radical species are shown to inhibit and/or reverse the formation of the dehydrogenated layer that forms during bombardment with Ar+ alone. Further studies examine the effect of inert ion mass through simulations of Ar +, Xe+, and He+ bombardment of PS, amorphous C, and nanoscale features on diamond surfaces. The differences in penetration depth, kinetic energy deposition, and scattering patterns are suggestive of the differing etch characteristics that are seen experimentally for these ions. A discussion of dangling bond formation during ion bombardment and longer time-scale dynamics is also offered. A brief review of currently available potential energy functions is presented. Selected results from MD simulations that utilize some of these potentials and are closely related to the work in this dissertation are also discussed. The difficulties of expanding potential energy functions vis-a-vis commonly used ab initio quantum chemical calculations are also addressed.

Fabricating and Controlling Silicon Zigzag Nanowires by Diffusion-Controlled Metal-Assisted Chemical Etching Method.

PubMed

Chen, Yun; Zhang, Cheng; Li, Liyi; Tuan, Chia-Chi; Wu, Fan; Chen, Xin; Gao, Jian; Ding, Yong; Wong, Ching-Ping

2017-07-12

Silicon (Si) zigzag nanowires (NWs) have a great potential in many applications because of its high surface/volume ratio. However, fabricating Si zigzag NWs has been challenging. In this work, a diffusion-controlled metal-assisted chemical etching method is developed to fabricate Si zigzag NWs. By tailoring the composition of etchant to change its diffusivity, etching direction, and etching time, various zigzag NWs can be easily fabricated. In addition, it is also found that a critical length of NW (>1 μm) is needed to form zigzag nanowires. Also, the amplitude of zigzag increases as the location approaches the center of the substrate and the length of zigzag nanowire increases. It is also demonstrated that such zigzag NWs can help the silicon substrate for self-cleaning and antireflection. This method may provide a feasible and economical way to fabricate zigzag NWs and novel structures for broad applications.

Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

NASA Astrophysics Data System (ADS)

Huang, Chi-Hsien; Igarashi, Makoto; Woné, Michel; Uraoka, Yukiharu; Fuyuki, Takashi; Takeguchi, Masaki; Yamashita, Ichiro; Samukawa, Seiji

2009-04-01

A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was successfully fabricated using the bio-nano-process, advanced etching techniques, including a treatment using nitrogen trifluoride and hydrogen radical (NF3 treatment) and a damage-free chlorine neutral beam (NB). By using the surface oxide formed by neutral beam oxidation (NBO) for the preparation of a 2D nanometer-sized iron core array as an etching mask, a well-ordered 2D Si-nanodisk array was obtained owing to the dangling bonds of the surface oxide. By changing the NF3 treatment time without changing the quantum effect of each nanodisk, we could control the gap between adjacent nanodisks. A device with two electrodes was fabricated to investigate the electron transport in a 2D Si-nanodisk array. Current fluctuation and time-dependent currents were clearly observed owing to the charging-discharging of the nanodisks adjacent to the current percolation path. The new structure may have great potential for future novel quantum effect devices.

Effect of rotary cutting instruments on the resin-tooth interfacial ultra structure: An in vivo study.

PubMed

Sherawat, Sudhir; Tewari, Sanjay; Duhan, Jigyasa; Gupta, Alpa; Singla, Rakesh

2014-12-01

To evaluate the effect of cutting teeth with different types of burs at various speeds on surface topography of tooth surface and interfacial gap formation at resin-tooth interface. The human molars were divided into seven groups: Diamond bur in airrotor (DA) & micromotor (DM), crosscut carbide bur in airrotor (CCA) & micromotor (CCM), plain carbide bur in airrotor (CA) & micromotor (CM) and #600-grit silicon carbide paper (SiC). In five samples from each group Class II box-only cavities were restored. The occlusal surface of four teeth per group was flattened. Two out of four teeth were acid etched. Teeth were subjected for scanning electron microscopy (SEM). Interfacial gap was observed in all groups with no significant difference. SEM observations revealed CA, CCA & DA were coarser than CM, CCM, DM and SiC. SEM of etched tooth surfaces revealed complete removal of amorphous smear layer in CA & CM, partial removal in CCA, CCM, DA & DM and no removal in SiC. Selecting an appropriate bur and its speed may not play an important role in bonding in terms of interfacial gap formation. Variable changes were observed in surface topography with different burs before and after acid etching. Key words:Surface topography, resin-tooth interface, interfacial gap, bonding.

Effect of rotary cutting instruments on the resin-tooth interfacial ultra structure: An in vivo study

PubMed Central

Sherawat, Sudhir; Tewari, Sanjay; Duhan, Jigyasa; Singla, Rakesh

2014-01-01

Objectives: To evaluate the effect of cutting teeth with different types of burs at various speeds on surface topography of tooth surface and interfacial gap formation at resin-tooth interface. Material and Methods: The human molars were divided into seven groups: Diamond bur in airrotor (DA) & micromotor (DM), crosscut carbide bur in airrotor (CCA) & micromotor (CCM), plain carbide bur in airrotor (CA) & micromotor (CM) and #600-grit silicon carbide paper (SiC). In five samples from each group Class II box-only cavities were restored. The occlusal surface of four teeth per group was flattened. Two out of four teeth were acid etched. Teeth were subjected for scanning electron microscopy (SEM). Results: Interfacial gap was observed in all groups with no significant difference. SEM observations revealed CA, CCA & DA were coarser than CM, CCM, DM and SiC. SEM of etched tooth surfaces revealed complete removal of amorphous smear layer in CA & CM, partial removal in CCA, CCM, DA & DM and no removal in SiC. Conclusions: Selecting an appropriate bur and its speed may not play an important role in bonding in terms of interfacial gap formation. Variable changes were observed in surface topography with different burs before and after acid etching. Key words:Surface topography, resin-tooth interface, interfacial gap, bonding. PMID:25674310

Self-aligned nanoforest in silicon nanowire for sensitive conductance modulation.

PubMed

Seol, Myeong-Lok; Ahn, Jae-Hyuk; Choi, Ji-Min; Choi, Sung-Jin; Choi, Yang-Kyu

2012-11-14

A self-aligned and localized nanoforest structure is constructed in a top-down fabricated silicon nanowire (SiNW). The surface-to-volume ratio (SVR) of the SiNW is enhanced due to the local nanoforest formation. The conductance modulation property of the SiNWs, which is an important characteristic in sensor and charge transfer based applications, can be largely enhanced. For the selective modification of the channel region, localized Joule-heating and subsequent metal-assisted chemical etching (mac-etch) are employed. The nanoforest is formed only in the channel region without misalignment due to the self-aligned process of Joule-heating. The modified SiNW is applied to a porphyrin-silicon hybrid device to verify the enhanced conductance modulation. The charge transfer efficiency between the porphyrin and the SiNW, which is caused by external optical excitation, is clearly increased compared to the initial SiNW. The effect of the local nanoforest formation is enhanced when longer etching times and larger widths are used.

Analysis of Etched CdZnTe Substrates

NASA Astrophysics Data System (ADS)

Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

2016-09-01

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Alkylation of Silicon(111) surfaces

NASA Astrophysics Data System (ADS)

Rivillon, S.; Chabal, Y. J.

2006-03-01

Methylation of chlorine-terminated silicon (111) (Si-Cl) is investigated by Infra Red Absorption Spectroscopy (IRAS). Starting from an atomically flat H-terminated Si(111), the surface is first chlorinated by a gas phase process, then methylated using a Grignard reagent. Methyl groups completely replace Cl, and are oriented normal to the surface. The surface remains atomically flat with no evidence of etching.

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si.

PubMed

Gries, Katharina I; Werner, Katharina; Beyer, Andreas; Stolz, Wolfgang; Volz, Kerstin

2016-02-01

Melt-back etching is an effect that can occur for gallium (Ga) containing III/V semiconductors grown on Si. Since this effect influences interfaces between the two compounds and therefore the physical characteristics of the material composition, it is desirable to understand its driving forces. Therefore, we investigated Ga grown on Si (001) via metal organic chemical vapor deposition using trimethyl Ga as a precursor. As a result of the melt-back etching, Ga-containing droplets formed on the Si surface which reach into the Si wafer. The shape of these structures was analyzed by plan view investigation and cross sectional tomography in a (scanning) transmission electron microscope. For plan view preparation a focused ion beam was used to avoid damage to the Ga-containing structures, which are sensitive to the chemicals normally used during conventional plan view preparation. Combining the results of both investigation methods confirms that the Ga-containing structure within the Si exhibits a pyramid shape with facets along the Si {111} lattice planes.

Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4F 8 and Ar/CHF 3 plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2015-11-11

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Platinum-catalyzed hydrolysis etching of SiC in water: A density functional theory study

NASA Astrophysics Data System (ADS)

Van Bui, Pho; Toh, Daisetsu; Isohashi, Ai; Matsuyama, Satoshi; Inagaki, Kouji; Sano, Yasuhisa; Yamauchi, Kazuto; Morikawa, Yoshitada

2018-05-01

A comprehensive study of the physicochemical interactions and the reaction mechanism of SiC etching with water by Pt catalysts can reveal key details about the surface treatment and catalytic phenomena at interfaces. Therefore, density functional theory simulations were performed to study the kinetics of Pt-assisted water dissociation and breaking of a Si–C bond compared to the HF-assisted mechanism. These calculations carefully considered the elastic and chemical interaction energies at the Pt–SiC interface, activation barriers of Si–C bond dissociation, and the catalytic role of Pt. It was found that the Pt-catalyzed etching of SiC in water is initiated via hydrolysis reactions that break the topmost Si–C bonds. The activation barrier strongly depends on the elastic and chemical interactions. However, chemical interactions are a dominant factor and mainly contribute to the lowering of the activation barrier, resulting in an increased rate of reaction.

Phosphorus Doping Using Electron Cyclotron Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Kakinuma, Hiroaki; Mohri, Mikio; Tsuruoka, Taiji

1994-01-01

We have investigated phosphorus doping using an electron cyclotron resonance (ECR) plasma, for application to the poly-Si driving circuits of liquid crystal displays or image sensors. The PH3/He was ionized and accelerated to poly-Si and c-Si substrates with a self bias of -220 V. The P concentration, as detected by secondary ion mass spectroscopy (SIMS), is ˜5×1021 cm-3 at the surface, which decayed to ˜1017 cm-3 within 50 100 nm depth. The surface is found to be etched during doping. The etching is restored by adding a small amount of SiH4 and the sheet resistance R s decreases. The optimized as-irradiated R s is ˜ 1× 105 Ω/\\Box and 1.7× 102 Ω/\\Box for poly-Si and (110) c-Si, respectively. The dependence of R s on the substrates and the anomalous diffusion constants derived from SIMS are also discussed.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

PubMed Central

Kawakami, Masatoshi; Metzler, Dominik; Li, Chen; Oehrlein, Gottlieb S.

2016-01-01

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C4F8 injection. The C4F8 and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number. PMID:27375342

Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation

NASA Astrophysics Data System (ADS)

Liu, Zecheng; Imamura, Masato; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

2017-08-01

Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

High-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Yun; Wong, C.-P.

2018-05-01

High-aspect-ratio (HAR) microstructures on silicon (Si) play key roles in photonics and electromechanical devices. However, it has been challenging to fabricate HAR microstructures with slanting profiles. Here we report successful fabrication of uniform HAR microstructures with controllable slanting angles on (1 0 0)-Si by slanted uniform metal-assisted chemical etching (SUMaCE). The trenches have width of 2 µm, aspect ratio greater than 20:1 and high geometric uniformity. The slanting angles can be adjusted between 2-70° with respect to the Si surface normal. The results support a fundamental hypothesis that under the UMaCE condition, the preferred etching direction is along the normal of the thin film catalysts, regardless of the relative orientation of the catalyst to Si substrates or the crystalline orientation of the substrates. The SUMaCE method paves the way to HAR 3D microfabrication with arbitrary slanting profiles inside Si.

Metal-assisted chemical etch porous silicon formation method

DOEpatents

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF{sub 3}/HBr/O{sub 2} and Cl{sub 2}/O{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, Yuan-Hung, E-mail: yhtseng.ee99g@nctu.edu.tw; Tsui, Bing-Yue

2014-05-15

In this paper, the authors performed a reactive ion etch of a 4H-SiC substrate with a gas mixture of NF{sub 3}, HBr, and O{sub 2}, resulting in a microtrenching-free etch. The etch rate was 107.8 nm/min, and the selectivity over the oxide hard mask was ∼3.85. Cross-sectional scanning electron microscopy showed no microtrenching compared with etches using plasmas of NF{sub 3}, NF{sub 3}/HBr, and NF{sub 3}/O{sub 2}. Analyzing a variety of HBr/O{sub 2} mixing ratios, the authors discuss the additive effect of each gas and their respective potential mechanisms for alleviating microtrenching. To increase the radius of gyration of the bottommore » corners, they introduced a second etch step with Cl{sub 2}/O{sub 2} plasma. Fabricating simple metal-oxide-semiconductor capacitors on the two-step etched surface, the authors found that the electrical characteristics of the etched sample were nearly the same as the nonetched sample.« less

Difference in anisotropic etching characteristics of alkaline and copper based acid solutions for single-crystalline Si.

PubMed

Chen, Wei; Liu, Yaoping; Yang, Lixia; Wu, Juntao; Chen, Quansheng; Zhao, Yan; Wang, Yan; Du, Xiaolong

2018-02-21

The so called inverted pyramid arrays, outperforming conventional upright pyramid textures, have been successfully achieved by one-step Cu assisted chemical etching (CACE) for light reflection minimization in silicon solar cells. Due to the lower reduction potential of Cu 2+ /Cu and different electronic properties of different Si planes, the etching of Si substrate shows orientation-dependent. Different from the upright pyramid obtained by alkaline solutions, the formation of inverted pyramid results from the coexistence of anisotropic etching and localized etching process. The obtained structure is bounded by Si {111} planes which have the lowest etching rate, no matter what orientation of Si substrate is. The Si etching rate and (100)/(111) etching ratio are quantitatively analyzed. The different behaviors of anisotropic etching of Si by alkaline and Cu based acid etchant have been systematically investigated.

Texturization of diamond-wire-sawn multicrystalline silicon wafer using Cu, Ag, or Ag/Cu as a metal catalyst

NASA Astrophysics Data System (ADS)

Wang, Shing-Dar; Chen, Ting-Wei

2018-06-01

In this work, Cu, Ag, or Ag/Cu was used as a metal catalyst to study the surface texturization of diamond-wire-sawn (DWS) multi-crystalline silicon (mc-Si) wafer by a metal-assisted chemical etching (MACE) method. The DWS wafer was first etched by standard HF-HNO3 acidic etching, and it was labeled as AE-DWS wafer. The effects of ratios of Cu(NO3)2:HF, AgNO3:HF, and AgNO3:Cu(NO3)2 on the morphology of AE-DWS wafer were investigated. After the process of MACE, the wafer was treated with a NaF/H2O2 solution. In this process, H2O2 etched the nanostructure, and NaF removed the oxidation layer. The Si {1 1 1} plane was revealed by etching the wafer in a mixture of 0.03 M Cu(NO3)2 and 1 M HF at 55 °C for 2.5 min. These parallel Si {1 1 1} planes replaced some parallel saw marks on the surface of AE-DWS wafers without forming a positive pyramid or an inverted pyramid structure. The main topography of the wafer is comprised of silicon nanowires grown in <1 0 0> direction when Ag or Ag/Cu was used as a metal catalyst. When silicon is etched in a mixed solution of Cu(NO3)2, AgNO3, HF and H2O2 at 55 °C with a concentration ratio of [Cu2+]/[Ag+] of 50 or at 65 °C with a concentration ratio of [Cu2+]/[Ag+] of 33, a quasi-inverted pyramid structure can be obtained. The reflectivity of the AE-DWS wafers treated with MACE is lower than that of the multiwire-slurry-sawn (MWSS) mc-Si wafers treated with traditional HF + HNO3 etching.

The relation between residual stress, interfacial structure and the joint property in the SiO2f/SiO2-Nb joints.

PubMed

Ma, Qiang; Li, Zhuo Ran; Yang, Lai Shan; Lin, Jing Huang; Ba, Jin; Wang, Ze Yu; Qi, Jun Lei; Feng, Ji Cai

2017-06-23

In order to achieve a high-quality joint between SiO 2f /SiO 2 and metals, it is necessary to address the poor wettability of SiO 2f /SiO 2 and the high residual stress in SiO 2f /SiO 2 -Nb joint. Here, we simultaneously realize good wettability and low residual stress in SiO 2f /SiO 2 -Nb joint by combined method of HF etching treatment and Finite Element Analysis (FEA). After etching treatment, the wettability of E-SiO 2f /SiO 2 was improved, and the residual stress in the joint was decreased. In order to better control the quality of joints, efforts were made to understand the relationship between surface structure of E-SiO 2f /SiO 2 and residual stress in joint using FEA. Based on the direction of FEA results, a relationship between residual stress, surface structure and joint property in the brazed joints were investigated by experiments. As well the FEA and the brazing test results both realized the high-quality joint of E-SiO 2f /SiO 2 -Nb and the shear strength of the joint reached 61.9 MPa.

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

NASA Astrophysics Data System (ADS)

Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

2010-09-01

A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

Understanding and controlling the step bunching instability in aqueous silicon etching

NASA Astrophysics Data System (ADS)

Bao, Hailing

Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110) substrate. Combining data from these etched patterns and surface IR spectra, a modified mechanism, which explained most experimental observations, was proposed. Control of the step-bunching instability was accomplished with a second micromachined etch barrier pattern which consisted of a circular array of seventy-two long, narrow trenches in an etch mask. Using this pattern, well aligned, regularly shaped, evenly-distributed, near-atomically flat terraces in micron size were produced controllably.

Enhanced photoelectrochemical properties of copper-assisted catalyzed etching black silicon by electrodepositing cobalt

NASA Astrophysics Data System (ADS)

Cai, Weidong; Xiong, Haiying; Su, Xiaodong; Zhou, Hao; Shen, Mingrong; Fang, Liang

2017-11-01

Black silicon (Si) photoelectrodes are promising for improving the performance of photoelectrochemical (PEC) water splitting. Here, we report the fabrication of p-black Si and n+p-black Si photocathodes via a controllable copper-assisted catalyzed etching method. The etching process affects only the topmost less than 200 nm of Si and is independent of the surface doping. The synergistic effects of the excellent light harvesting of the black Si and the improved charge transfer properties of the p-n junction boost the production and utilization of photogenerated carriers. The mean reflectance of the pristine Si samples is about 10% from 400 to 950 nm, while that of the black Si samples is reduced as low as 5%. In addition, the PEC properties of the n+p-black Si photocathode can be further enhanced by depositing a cobalt (Co) layer. Compared with the p-Si sample, the onset potential of the Co/n+p-black Si photocathode is positively shifted by 560 mV to 0.33 V vs. reversible hydrogen electrode and the saturation photocurrent density is increased from 22.7 to 32.6 mA/cm2. The design of the Co/n+p-black Si photocathode offers an efficient strategy for preparing PEC solar energy conversion devices.

Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

NASA Technical Reports Server (NTRS)

Hossain, T.; Khan, F.; Adesida, I.; Bohn, P.; Rittenhouse, T.; Lienhard, Michael (Technical Monitor)

2003-01-01

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

PubMed

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

NASA Astrophysics Data System (ADS)

Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

2015-12-01

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO2 plasma etching

NASA Astrophysics Data System (ADS)

Chapman, Glenn H.; Tu, Yuqiang; Peng, Jun

2004-01-01

Bi/In thermal resist is a bilayer structure of Bi over In films which can be exposed by laser with a wide range of wavelengths and can be developed by diluted RCA2 solutions. Current research shows bimetallic resist can work as etch masking layer for both dry plasma etching and wet anisotropic etching. It can act as both patterning and masking layers for Si and SiO2 with plasma "dry" etch using CF4/CHF3. The etching condition is CF4 flow rate 50 sccm, pressure 150 mTorr, and RF power 100 - 600W. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1 nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In. Bi/In also creates etch masking layers for alkaline-based (KOH, TMAH and EDP) "wet" anisotropic bulk Si etch without the need of SiO2 masking steps. The laser exposed Bi/In etches two times more slowly than SiO2. Experiment result shows that single metal Indium film exhibits thermal resist characteristics but at twice the exposure levels. It can be developed in diluted RCA2 solution and used as an etch mask layer for Si anisotropic etch. X-ray diffraction analysis shows that laser exposure causes both Bi and In single film to oxidize. In film may become amorphous when exposed to high laser power.

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

NASA Astrophysics Data System (ADS)

Angermann, H.; Rappich, J.; Korte, L.; Sieber, I.; Conrad, E.; Schmidt, M.; Hübener, K.; Polte, J.; Hauschild, J.

2008-04-01

Special sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of differently oriented silicon to prepare very smooth silicon interfaces with excellent electronic properties on mono- and poly-crystalline substrates. Surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and scanning electron microscopy (SEM) investigations were utilised to develop wet-chemical smoothing procedures for atomically flat and structured surfaces, respectively. Hydrogen-termination as well as passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological processing. Compared to conventional pre-treatments, significantly lower micro-roughness and densities of surface states were achieved on mono-crystalline Si(100), on evenly distributed atomic steps, such as on vicinal Si(111), on silicon wafers with randomly distributed upside pyramids, and on poly-crystalline EFG ( Edge-defined Film-fed- Growth) silicon substrates. The recombination loss at a-Si:H/c-Si interfaces prepared on c-Si substrates with randomly distributed upside pyramids was markedly reduced by an optimised wet-chemical smoothing procedure, as determined by PL measurements. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H(n)/c-Si(p)/Al) with textured c-Si substrates the smoothening procedure results in a significant increase of short circuit current Isc, fill factor and efficiency η. The scatter in the cell parameters for measurements on different cells is much narrower, as compared to conventional pre-treatments, indicating more well-defined and reproducible surface conditions prior to a-Si:H emitter deposition and/or a higher stability of the c-Si surface against variations in the a-Si:H deposition conditions.

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powel J. Anthony; Spry, David J.; Trunek, Andrew J.; Huang, Xianrong; Vetter, William M.; Dudley, Michael; Skowronski, Marek; Liu, Jinqiang

2002-01-01

This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.

Fabrication of surface micro- and nanostructures for superhydrophobic surfaces in electric and electronic applications

NASA Astrophysics Data System (ADS)

Xiu, Yonghao

In our study, the superhydrophobic surface based on biomimetic lotus leave is explored to maintain the desired properties for self-cleaning. Parameters in controlling bead-up and roll-off characteristics of water droplets were investigated on different model surfaces. The governing equations were proposed. Heuristic study is performed. First, the fundamental understanding of the effect of roughness on superhydrophobicity is performed. The effect of hierarchical roughness, i.e., two scale roughness effect on roughness is investigated using systems of (1) monodisperse colloidal silica sphere (submicron) arrays and Au nanoparticle on top and (2) Si micrometer pyramids and Si nanostructures on top from KOH etching and metal assisted etching of Si. The relation between the contact area fraction and water droplet contact angles are derived based on Wenzel and Cassie-Baxter equation for the systems and the two scale effect is explained regarding the synergistic combination of two scales. Previously the microscopic three-phase-contact line is thought to be the key factor in determining contact angles and hystereses. In our study, Laplace pressure was brought up and related to the three-phase-contact line and taken as a key figure of merit in determining superhydrophobicity. In addition, we are one of the first to study the effect of tapered structures (wall inclination). Combining with a second scale roughness on the tapered structures, stable Cassie state for both water and low surface energy oil may be achieved. This is of great significance for designing both superhydrophobicity and superoleophobicity. Regarding the origin of contact angle hysteresis, study of superhydrophobicity on micrometer Si pillars was performed. The relation between the interface work of function and contact angle hysteresis was proposed and derived mathematically based on the Young-Dupre equation. The three-phase-contact line was further related to a secondary scale roughness induced. Based on our understanding of the roughness effect on superhydrophobicity (both contact angle and hysteresis), structured surfaces from polybutadiene, polyurethane, silica, and Si etc. were successfully prepared. For engineering applications of superhydrophobic surfaces, stability issues regarding UV, mechanical robustness and humid environment need to be investigated. Among these factors, UV stability is the first one to be studied. However, most polymer surfaces we prepared failed the purpose. Silica surfaces with excellent UV stability were prepared. This method consists of preparation of rough silica surfaces, thermal treatment and the following surface hydrophobization by fluoroalkyl silane treatment. Fluoroalkyl groups are UV stable and the underlying species are silica which is also UV stable (UV transparent). UV stability on the surface currently is 5,500 h according the standard test method of ASTM D 4329. No degradation on surface superhydrophobicity was observed. New methods for preparing superhydrophobic and transparent silica surfaces were investigated using urea-choline chloride eutectic liquid to generate fine roughness and reduce the cost for preparation of surface structures. Another possible application for self-cleaning in photovoltaic panels was investigated on Si surfaces by construction of the two-scale rough structures followed by fluoroalkyl silane treatment. Metal (Au) assisted etching was employed to fabricate nanostructures on micrometer pyramid surfaces. The light reflection on the prepared surfaces was investigated. After surface texturing using KOH etching for micrometer pyramids and the following nanostructure using metal assisted etching, surface light reflection reduced to a minimum value which shows that this surface texturing technique is highly promising for improving the photovoltaic efficiency while imparting photovoltaics the self-cleaning feature. This surface is also expected to be UV stable due to the same fluoroalkyl silane used. Regarding the mechanical robustness, epoxy-silica superhydrophobic surfaces were prepared by O2 plasma etching to generate enough surface roughness of silica spheres followed by fluoroalkyl silane treatment. A robustness test method was proposed and the test results showed that the surface is among the most robust surfaces for the superhydrophobic surfaces we prepared and currently reported in literature.

Web Growth Used to Confine Screw Dislocations to Predetermined Lateral Positions in 4H-SiC Epilayers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Neudeck, Philip G.; Spry, David J.; Trunek, Andrew J.; Beheim, Glenn M.

2004-01-01

Silicon-carbide- (SiC-) based power devices could enable substantial aerospace electronics benefits over today's silicon-based electronics. However, present-day SiC wafers contain electrically harmful dislocations (including micropipes) that are unpredictably distributed in high densities across all commercial 4H- and 6H-SiC wafers. The NASA Glenn Research Center recently demonstrated a crystal growth process that moves SiC wafer dislocations to predetermined lateral positions in epitaxial layers so that they can be reproducibly avoided during subsequent SiC electronic device fabrication. The process starts by reactive ion etching mesa patterns with enclosed trench regions into commercial on-axis (0001) 4H- or 6H-SiC substrates. An example of a pregrowth mesa geometry with six enclosed triangular-shaped trench regions is shown. After the etch mask is stripped, homoepitaxial growth is carried out in pure stepflow conditions that enable thin cantilevers to grow laterally from the tops of mesas whose pregrowth top surfaces are not threaded by substrate screw dislocations. The image in the bottom figure shows the postgrowth structure that forms after the lateral cantilevers expand to coalesce and completely roof over each of the six triangular trench regions. Atomic force microscope (AFM) measurements of the roof revealed that three elementary screw dislocation growth spirals, each shown in the AFM insets of the bottom image on the previous page, formed in the film roof at three respective points of cantilever film coalescence. The image above shows the structure following an etch in molten potassium hydroxide (KOH) that produced surface etch pits at the dislocation defects. The larger KOH etch pits--S1, S2, and S3--shown in this image correspond to screw dislocations relocated to the final points of cantilever coalescence. The smaller KOH etch pits are consistent with epilayer threading edge dislocations from the pregrowth substrate mesa (P1, P3, and P4) and a final cantilever coalescence point (P2). No defects (i.e., no etch pits) are observed in other cantilevered portions of the film surface. On the basis of the principle of dislocation Burgers vector conservation, we hypothesize that all vertically propagating substrate dislocations in an enclosed trench region become combined into a single dislocation in the webbed film roof at the point of final roof coalescence. The point of final roof coalescence, and therefore the lateral location of a webbed roof dislocation, can be designed into the pregrowth mesa pattern. Screw dislocations with predetermined lateral positions can then be used to provide the new growth steps necessary for growing a 4H/6H-SiC epilayer with a lower dislocation density than the substrate. Devices fabricated on top of such films can be positioned to avoid the preplaced dislocations.

Design and fabrication of a large area freestanding compressive stress SiO2 optical window

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Sangu, Suguru; Ono, Takahito

2016-07-01

This paper reports the design and fabrication of a 7.2 mm  ×  9.6 mm freestanding compressive stress SiO2 optical window without buckling. An application of the SiO2 optical window with and without liquid penetration has been demonstrated for an optical modulator and its optical characteristic is evaluated by using an image sensor. Two methods for SiO2 optical window fabrication have been presented. The first method is a combination of silicon etching and a thermal oxidation process. Silicon capillaries fabricated by deep reactive ion etching (deep RIE) are completely oxidized to form the SiO2 capillaries. The large compressive stress of the oxide causes buckling of the optical window, which is reduced by optimizing the design of the device structure. A magnetron-type RIE, which is investigated for deep SiO2 etching, is the second method. This method achieves deep SiO2 etching together with smooth surfaces, vertical shapes and a high aspect ratio. Additionally, in order to avoid a wrinkling optical window, the idea of a Peano curve structure has been proposed to achieve a freestanding compressive stress SiO2 optical window. A 7.2 mm  ×  9.6 mm optical window area without buckling integrated with an image sensor for an optical modulator has been successfully fabricated. The qualitative and quantitative evaluations have been performed in cases with and without liquid penetration.

Directional Etching of Silicon by Silver Nanostructures

NASA Astrophysics Data System (ADS)

Sharma, Pradeep; Wang, Yuh-Lin

2011-02-01

We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

Porous silicon formation during Au-catalyzed etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Algasinger, Michael; Bernt, Maximilian; Koynov, Svetoslav

2014-04-28

The formation of “black” nano-textured Si during the Au-catalyzed wet-chemical etch process was investigated with respect to photovoltaic applications. Cross-sectional scanning electron microscopy (SEM) images recorded at different stages of the etch process exhibit an evolution of a two-layer structure, consisting of cone-like Si hillocks covered with a nano-porous Si (np-Si) layer. Optical measurements confirm the presence of a np-Si phase which appears after the first ∼10 s of the etch process and continuously increases with the etch time. Furthermore, the etch process was investigated on Si substrates with different doping levels (∼0.01–100 Ω cm). SEM images show a transition frommore » the two-layer morphology to a structure consisting entirely of np-Si for higher doping levels (<0.1 Ω cm). The experimental results are discussed on the basis of the model of a local electrochemical etch process. A better understanding of the metal-catalyzed etch process facilitates the fabrication of “black” Si on various Si substrates, which is of significant interest for photovoltaic applications.« less

Atomic precision etch using a low-electron temperature plasma

NASA Astrophysics Data System (ADS)

Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

2016-03-01

Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

Surface characteristics and damage distributions of diamond wire sawn wafers for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, Bhushan; Devayajanam, Srinivas; Basnyat, Prakash

2016-01-01

This paper describes surface characteristics, in terms of its morphology, roughness and near-surface damage of Si wafers cut by diamond wire sawing (DWS) of Si ingots under different cutting conditions. Diamond wire sawn Si wafers exhibit nearly-periodic surface features of different spatial wavelengths, which correspond to kinematics of various movements during wafering, such as ingot feed, wire reciprocation, and wire snap. The surface damage occurs in the form of frozen-in dislocations, phase changes, and microcracks. The in-depth damage was determined by conventional methods such as TEM, SEM and angle-polishing/defect-etching. However, because these methods only provide local information, we have alsomore » applied a new technique that determines average damage depth over a large area. This technique uses sequential measurement of the minority carrier lifetime after etching thin layers from the surfaces. The lateral spatial damage variations, which seem to be mainly related to wire reciprocation process, were observed by photoluminescence and minority carrier lifetime mapping. Our results show a strong correlation of damage depth on the diamond grit size and wire usage.« less

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Weiye; Sridhar, Shyam; Liu, Lei

2014-05-28

Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) andmore » Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.« less

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawakami, Masatoshi; Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu

2016-07-15

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change inmore » the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.« less

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen

NASA Astrophysics Data System (ADS)

Okada, Y.; Chen, J.; Campbell, I. H.; Fauchet, P. M.; Wagner, S.

1990-02-01

We study the growth of amorphous (a-Si:H,F) and of microcrystalline (μc-Si) silicon over trench patterns in crystalline silicon substrates. We vary the conditions of the SiF4-H2 glow discharge from deposition to etching. All deposited films form lips at the trench mouth and are uniformly thick on the trench walls. Therefore, surface diffusion is not important. The results of a Monte Carlo simulation suggest that film growth is governed by a single growth species with a low (˜0.2) sticking coefficient, in combination with a highly reactive etching species.

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2006-01-01

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

Fabrication of Buried Nanochannels From Nanowire Patterns

NASA Technical Reports Server (NTRS)

Choi, Daniel; Yang, Eui-Hyeok

2007-01-01

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

In Situ Infrared Spectroscopic Studies of Molecular Layer Deposition and Atomic Layer Etching Processes

NASA Astrophysics Data System (ADS)

DuMont, Jaime Willadean

In this thesis, in situ Fourier transform infrared (FTIR) spectroscopy was used to study: i) the growth and pyrolysis of molecular layer deposition (MLD) films. ii) the surface chemistry of atomic layer etching (ALE) processes. Atomic layer processes such as molecular layer deposition (MLD) and atomic layer etching (ALE) are techniques that can add or remove material with atomic level precision using sequential, self-limiting surface reactions. Deposition and removal processes at the atomic scale are powerful tools for many industrial and research applications such as energy storage and semiconductor nanofabrication. The first section of this thesis describes the chemistry of reactions leading to the MLD of aluminum and tin alkoxide polymer films known as "alucone" and "tincone", respectively. The subsequent pyrolysis of these films to produce metal oxide/carbon composites was also investigated. In situ FTIR spectroscopy was conducted to monitor surface species during MLD film growth and to monitor the films background infrared absorbance versus pyrolysis temperature. Ex situ techniques such as transmission electron microscopy (TEM), four-point probe and X-ray diffraction (XRD) were utilized to study the properties of the films post-pyrolysis. TEM confirmed that the pyrolyzed films maintained conformality during post-processing. Four-point probe monitored film resistivity versus pyrolysis temperature and XRD determined the film crystallinity. The second section of this thesis focuses on the surface chemistry of Al2O3 and SiO2 ALE processes, respectively. Thermal ALE processes have been recently developed which utilize sequential fluorination and ligand exchange reactions. An intimate knowledge of the surface chemistry is important in understanding the ALE process. In this section, the competition between the Al2O3 etching and AlF 3 growth that occur during sequential HF (fluorinating agent) and TMA (ligand exchange) exposures is investigated using in situ FTIR spectroscopy. Also included in this section is the first demonstration of thermal ALE for SiO2. In situ FTIR spectroscopy was conducted to monitor the loss of bulk Si-O vibrational modes corresponding to the removal of SiO2. FTIR was also used to monitor surface species during each ALE half cycle and to verify self-limiting behavior. X-ray reflectivity experiments were conducted to establish etch rates on thermal oxide silicon wafers.

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

NASA Astrophysics Data System (ADS)

Myers, John N.; Zhang, Xiaoxian; Huang, Huai; Shobha, Hosadurga; Grill, Alfred; Chen, Zhan

2017-05-01

Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ˜66% of the surface methyl groups and changed the orientation of surface methyl groups from ˜47° to ˜40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ˜55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ˜25 nm of the film and that the dielectric recovery treatment repaired the top ˜9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1993-01-01

The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques.

Fabrication of a high sensitivity and fast response self-powered photosensor based on a core-shell silicon nanowire homojunction

NASA Astrophysics Data System (ADS)

Abdul-Hameed, Assel A.; Mahdi, M. A.; Ali, Basil; Selman, Abbas M.; Al-Taay, H. F.; Jennings, P.; Lee, Wen-Jen

2018-04-01

Core-shell self-powered SiNWs homojunction photosensors have been fabricated. SiNWs are prepared by a metal assisted chemical etching method using different HF/H2O2 ratios and etching times. The length of the p-SiNWs increased as the H2O2 concentration and etching time increased. All the grown SiNWs show very low (∼0.7%) optical reflectance for the wavelength range of 200-1100 nm. Photoluminescence spectra of all prepared SiNWs show sharp and broad emission bands located in the red region of the light spectrum. Core-shell homojunction photosensors were fabricated by spin coating P2O2 onto the surface of the prepared p-SiNWs and annealed at 900 °C for 1 h. The fabricated devices exhibited photovoltaic behavior and high photosensitivity with fast response speed to the visible light. However, the sample that was fabricated using HF/H2O2 ratio of 1:1 showed the highest photosensitivity value of 3578% while the photosensor prepared using 2:1 ratio of HF/H2O2 gave the faster rise and decay time.

Disilane-based cyclic deposition/etch of Si, Si:P and Si1-yCy:P layers: I. The elementary process steps

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Deguet, C.

2013-02-01

We have benchmarked the 550 °C, 20 Torr growth of Si:P and Si1-yCy:P using SiH4 and Si2H6. P segregation has prevented us from reaching P+ ion concentrations in Si higher than a few 1019 cm-3 using SiH4; the resulting surface ‘poisoning’ led to a severe growth rate reduction. Meanwhile, [P+] increased linearly with the phosphine flow when using Si2H6 as the Si precursor; values as high as 1.7 × 1020 cm-3 were obtained. The Si:P growth rate using Si2H6 was initially stable then increased as the PH3 flow increased. Mono-methylsilane flows 6.5-10 times higher were needed with Si2H6 than with SiH4 to reach the same substitutional C concentrations in intrinsic Si1-yCy layers ([C]subst. up to 1.9%). Growth rates were approximately six times higher with Si2H6 than with SiH4, however. 30 nm thick Si1-yCy layers became rough as [C]subst. exceeded 1.6% (formation of increasing numbers of islands). We have also studied the structural and electrical properties of ‘low’ and ‘high’ C content Si1-yCy:P layers (˜ 1.5 and 1.8%, respectively) grown with Si2H6. Adding significant amounts of PH3 led to a reduction of the tensile strain in the films. This was due to the incorporation of P atoms (at the expense of C atoms) in the substitutional sites of the Si matrix. Si1-yCy:P layers otherwise became rough as the PH3 flow increased. Resistivities lower than 1 mΩ cm were nevertheless associated with those Si1-yCy:P layers, with P atomic concentrations at most 3.9 × 1020 cm-3. Finally, we have quantified the beneficial impact of adding GeH4 to HCl for the low-temperature etching of Si. Etch rates 12-36 times higher with HCl + GeH4 than with pure HCl were achieved at 20 Torr. Workable etch rates close to 1 nm min-1 were obtained at 600 °C (versus 750 °C for pure HCl), enabling low-temperature cyclic deposition/etch strategies for the selective epitaxial growth of Si, Si:P and Si1-yCy:P layers on patterned wafers.

Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation

NASA Astrophysics Data System (ADS)

Mayangsari, Tirta R.; Yusup, Luchana L.; Park, Jae-Min; Blanquet, Elisabeth; Pons, Michel; Jung, Jongwan; Lee, Won-Jun

2017-06-01

We modeled and simulated the surface reaction of silicon precursor on different surfaces by thermodynamic analysis and density functional theory calculation. We considered SiH2Cl2 and argon as the silicon precursor and the carrier gas without etchant gas. First, the equilibrium composition of both gaseous and solid species was analyzed as a function of process temperature. SiCl4 is the dominant gaseous species at below 750 °C, and SiCl2 and HCl are dominant at higher temperatures, and the yield of silicon decreases with increasing temperature over 700 °C due to the etching of silicon by HCl. The yield of silicon for SiO2 substrate is lower than that for silicon substrate, especially at 1000 °C or higher. Zero deposition yield and the etching of SiO2 substrate at higher temperatures leads to selective growth on silicon substrate. Next, the adsorption and the reaction of silicon precursor was simulated on H-terminated silicon (100) substrate and on OH-terminated β-cristobalite substrate. The adsorption and reaction of a SiH2Cl2 molecule are spontaneous for both Si and SiO2 substrates. However, the energy barrier for reaction is very small (6×10-4 eV) for Si substrate, whereas the energy barrier is high (0.33 eV) for SiO2 substrate. This makes the differences in growth rate, which also supports the experimental results in literature.

Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

NASA Astrophysics Data System (ADS)

Hatayama, Tomoaki; Tamura, Tetsuya; Yano, Hiroshi; Fuyuki, Takashi

2012-07-01

The etch pit shape of an off-angled 4H-SiC Si-face formed by chlorine trifluoride (ClF3) in nitrogen (N2) ambient has been studied. One type of etch pit with a crooked hexagonal shape was formed at an etching temperature below 500 °C. The angle of the etch pit measured from a cross-sectional atomic force microscopy image was about 10° from the [11bar 20] view. The dislocation type of the etch pit was discussed in relation to the etch pit shape and an electron-beam-induced current image.

Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon.

PubMed

Kim, Jeong Dong; Kim, Munho; Kong, Lingyu; Mohseni, Parsian K; Ranganathan, Srikanth; Pachamuthu, Jayavel; Chim, Wai Kin; Chiam, Sing Yang; Coleman, James J; Li, Xiuling

2018-03-14

Defying text definitions of wet etching, metal-assisted chemical etching (MacEtch), a solution-based, damage-free semiconductor etching method, is directional, where the metal catalyst film sinks with the semiconductor etching front, producing 3D semiconductor structures that are complementary to the metal catalyst film pattern. The same recipe that works perfectly to produce ordered array of nanostructures for single-crystalline Si (c-Si) fails completely when applied to polycrystalline Si (poly-Si) with the same doping type and level. Another long-standing challenge for MacEtch is the difficulty of uniformly etching across feature sizes larger than a few micrometers because of the nature of lateral etching. The issue of interface control between the catalyst and the semiconductor in both lateral and vertical directions over time and over distance needs to be systematically addressed. Here, we present a self-anchored catalyst (SAC) MacEtch method, where a nanoporous catalyst film is used to produce nanowires through the pinholes, which in turn physically anchor the catalyst film from detouring as it descends. The systematic vertical etch rate study as a function of porous catalyst diameter from 200 to 900 nm shows that the SAC-MacEtch not only confines the etching direction but also enhances the etch rate due to the increased liquid access path, significantly delaying the onset of the mass-transport-limited critical diameter compared to nonporous catalyst c-Si counterpart. With this enhanced mass transport approach, vias on multistacks of poly-Si/SiO 2 are also formed with excellent vertical registry through the polystack, even though they are separated by SiO 2 which is readily removed by HF alone with no anisotropy. In addition, 320 μm square through-Si-via (TSV) arrays in 550 μm thick c-Si are realized. The ability of SAC-MacEtch to etch through poly/oxide/poly stack as well as more than half millimeter thick silicon with excellent site specificity for a wide range of feature sizes has significant implications for 2.5D/3D photonic and electronic device applications.

Development of high efficiency thin film polycrystalline silicon solar cells using VEST process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishihara, T.; Arimoto, S.; Morikawa, H.

1998-12-31

Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films (VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1) quality of Si films, (2) back surface emitter (BSE), (3) front surface emitter etch-back process, (4) back surface field (BSF) layer thickness and its resistivity, and (5) defect passivation by hydrogen implantation. As a result of experiments, the authors have achieved 16% efficiency (V{sub oc}:0.589V, J{sub sc}:35.6mA/cm{sup 2}, F,F:0.763)more » with a cell size of 95.8cm{sup 2} and the thickness of 77 {micro}m. It is the highest efficiency ever reported for large area thin film Si solar cells.« less

Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

NASA Astrophysics Data System (ADS)

Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

2010-09-01

Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth

NASA Astrophysics Data System (ADS)

Abadier, Mina; Song, Haizheng; Sudarshan, Tangali S.; Picard, Yoosuf N.; Skowronski, Marek

2015-05-01

Transmission electron microscopy (TEM) and KOH etching were used to analyze the motion of dislocations after the conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) during 4H-SiC epitaxy. The locations of TED etch pits on the epilayer surface were shifted compared to the original locations of BPD etch pits on the substrate surface. The shift of the TED etch pits was mostly along the BPD line directions towards the up-step direction. For converted screw type BPDs, the conversion points were located below the substrate/epilayer interface. The shift distances in the step-flow direction were proportional to the depths of the BPD-TED conversion points below the substrate/epilayer interface. For converted mixed type BPDs, the conversion points were exactly at the interface. Through TEM analysis, it was concluded that the dislocation shift is caused by a combined effect of H2 etching prior to growth and glide of the threading segments during high temperature epitaxy. The TED glide is only possible for converted pure screw type BPDs and could present a viable means for eliminating BPDs from the epilayer during growth by moving the conversion point below the substrate/epilayer interface.

Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5.

PubMed

Ahles, Christopher F; Choi, Jong Youn; Wolf, Steven; Kummel, Andrew C

2017-06-21

The selective etching characteristics of silicon, germanium, and Si 0.5 Ge 0.5 subjected to a downstream H 2 /CF 4 /Ar plasma have been studied using a pair of in situ quartz crystal microbalances (QCMs) and X-ray photoelectron spectroscopy (XPS). At 50 °C and 760 mTorr, Si can be etched in preference to Ge and Si 0.5 Ge 0.5 , with an essentially infinite Si/Ge etch-rate ratio (ERR), whereas for Si/Si 0.5 Ge 0.5 , the ERR is infinite at 22 °C and 760 mTorr. XPS data showed that the selectivity is due to the differential suppression of etching by a ∼2 ML thick C x H y F z layer formed by the H 2 /CF 4 /Ar plasma on Si, Ge, and Si 0.5 Ge 0.5 . The data are consistent with the less exothermic reaction of fluorine radicals with Ge or Si 0.5 Ge 0.5 being strongly suppressed by the C x H y F z layer, whereas, on Si, the C x H y F z layer is not sufficient to completely suppress etching. Replacing H 2 with D 2 in the feed gas resulted in an inverse kinetic isotope effect (IKIE) where the Si and Si 0.5 Ge 0.5 etch rates were increased by ∼30 times with retention of significant etch selectivity. The use of D 2 /CF 4 /Ar instead of H 2 /CF 4 /Ar resulted in less total carbon deposition on Si and Si 0.5 Ge 0.5 and gave less Ge enrichment of Si 0.5 Ge 0.5 . These results are consistent with the selectivity being due to the differential suppression of etching by an angstrom-scale carbon layer.

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Light-emitting silicon nanowires obtained by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Irrera, Alessia; Josè Lo Faro, Maria; D'Andrea, Cristiano; Alessio Leonardi, Antonio; Artoni, Pietro; Fazio, Barbara; Picca, Rosaria Anna; Cioffi, Nicola; Trusso, Sebastiano; Franzò, Giorgia; Musumeci, Paolo; Priolo, Francesco; Iacona, Fabio

2017-04-01

This review reports on a new process for the synthesis of Si nanowires (NWs), based on the wet etching of Si substrates assisted by a thin metal film. The approach exploits the thickness-dependent morphology of the metal layers to define uncovered nanometric Si regions, which behave as precursor sites for the formation of very dense (up to 1 × 1012 NW cm-2) arrays of long (up to several μm) and ultrathin (diameter of 5-9 nm) NWs. Intense photoluminescence (PL) peaks, characterized by maxima in the 640-750 nm range and by an external quantum efficiency of 0.5%, are observed when the Si NWs are excited at room temperature. The spectra show a blueshift if the size of the NW is decreased, in agreement with the occurrence of quantum confinement effects. The same etching process can be used to obtain ultrathin Si/Ge NWs from a Si/Ge multi-quantum well. The Si/Ge NWs exhibit—in addition to the Si-related PL peak—a signal at about 1240 nm due to Ge nanostructures. The huge surface area of the Si NW arrays can be exploited for sensing and analytical applications. The dependence of the PL intensity on the chemical composition of the surface indeed suggests interesting perspectives for the detection of gaseous molecules. Moreover, Si NWs decorated with Ag nanoparticles can be effectively employed in the interference-free laser desorption-ionization mass spectrometry of low-molecular-weight analytes. A device based on conductive Si NWs, showing intense and stable electroluminescence at an excitation voltage as low as 2 V, is also presented. The unique features of the proposed synthesis (the process is cheap, fast, maskless and compatible with Si technology) and the unusual optical properties of the material open the route towards new and unexpected perspectives for semiconductor NWs in photonics.

Role of Pb for Ag growth on H-passivated Si(1 0 0) surfaces

NASA Astrophysics Data System (ADS)

Mathew, S.; Satpati, B.; Joseph, B.; Dev, B. N.

2005-08-01

We have deposited Ag on hydrogen passivated Si(1 0 0) surfaces under high vacuum conditions at room temperature. The deposition, followed by annealing at 250 °C for 30 min, produced silver islands of an average lateral size 36±14 nm. Depositing a small amount of Pb prior to Ag deposition reduced the average island size to 14±5 nm. A small amount of Pb, initially present at the Ag-Si interface, is found to be segregating to the surface of Ag after annealing. Both these aspects, namely, reduction of the island size and Pb floating on the Ag surface conform to the surfactant action of Pb. Samples have been characterized by transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). A selective etching process that preferentially removes Pb, in conjunction with RBS, was used to detect surface segregation of Pb involving depth scales below the resolution of conventional RBS. The annealing and etching process leaves only smaller Ag islands on the surface with complete removal of Pb. Ag growth in the presence of Pb leads to smaller Ag islands with a narrower size distribution.

Ridge-width dependence of the threshold of long wavelength (λ ≈ 14 µm) Quantum Cascade lasers with sloped and vertical sidewalls.

PubMed

Huang, Xue; Chiu, Yenting; Charles, William O; Gmachl, Claire

2012-01-30

We investigate the ridge-width dependence of the threshold of Quantum Cascade lasers fabricated by wet and dry etching, respectively. The sloped sidewalls resulting from wet etching affect the threshold in two ways as the ridge gets narrower. First, the transverse modes are deeper in the substrate, hence reducing the optical confinement factor. Second, more important, a non-negligible field exists in the lossy SiO2 insulation layer, as a result of transverse magnetic mode coupling to the surface plamon mode at the insulator/metal surface, which increases the waveguide loss. By contrast, dry etching is anisotropic and leads to waveguides with vertical sidewalls, which avoids the shift of the modes to the substrate layer and coupling to the surface plasmons, resulting in improved threshold compared with wet-etched lasers, e.g., for narrow ridge widths below 20 µm, the threshold of a 14 µm wide λ ≈ 14 µm laser by dry etching is ~60% lower than that of a wet-etched laser of the same width, at 80 K.

In vitro remineralization of acid-etched human enamel with Ca 3SiO 5

NASA Astrophysics Data System (ADS)

Dong, Zhihong; Chang, Jiang; Deng, Yan; Joiner, Andrew

2010-02-01

Bioactive and inductive silicate-based bioceramics play an important role in hard tissue prosthetics such as bone and teeth. In the present study, a model was established to study the acid-etched enamel remineralization with tricalcium silicate (Ca 3SiO 5, C 3S) paste in vitro. After soaking in simulated oral fluid (SOF), Ca-P precipitation layer was formed on the enamel surface, with the prolonged soaking time, apatite layer turned into density and uniformity and thickness increasingly from 250 to 350 nm for 1 day to 1.7-1.9 μm for 7 days. Structure of apatite crystals was similar to that of hydroxyapatite (HAp). At the same time, surface smoothness of the remineralized layer is favorable for the oral hygiene. These results suggested that C 3S treated the acid-etched enamel can induce apatite formation, indicating the biomimic mineralization ability, and C 3S could be used as an agent of inductive biomineralization for the enamel prosthesis and protection.

Compositional depth profile of a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching

NASA Technical Reports Server (NTRS)

Wurzbach, J. A.; Grunthaner, F. J.

1983-01-01

It is pointed out that there is no report of an unambiguous analysis of the composition and interfacial structure of MNOS (metal-nitride oxide semiconductor) systems, despite the technological importance of these systems. The present investigation is concerned with a study of an MNOS structure on the basis of a technique involving the use of X-ray photoelectron spectroscopy (XPS) with a controlled stopped-flow chemical-etching procedure. XPS is sensitive to the structure of surface layers, while stopped-flow etching permits the controlled removal of overlying material on a scale of atomic layers, to expose new surface layers as a function of thickness. Therefore, with careful analysis of observed intensities at measured depths, this combination of techniques provides depth resolution between 5 and 10 A. According to the obtained data there is intact SiO2 at the substrate interface. There appears to be a thin layer containing excess bonds to silicon on top of the SiO2.

Method of plasma etching Ga-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2012-12-25

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Method of plasma etching GA-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2013-01-01

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Study of Mechano-Chemical Machining of Ceramics and the Effect on Thin Film Behavior.

DTIC Science & Technology

1981-06-01

polished 7 dry on nylon using NaCI 3 Photomicrographs of the etched surfaces of MgO polished 8 .wet on glass using NaCl 4 Surface profile and Nomarski ...micrograph of a Si wafer 10 taken before mechano-chemical polishing 5 Surface profile and Nomarski micrograph of a Si wafer 11 taken after mechano... Nomarski micrographs of mechano-chemically-polished 21 sapphire and tape-cast alumina 14 Surface profiles of mechano-chemically-polished sapphire 22

Anisotropic Etching Using Reactive Cluster Beams

NASA Astrophysics Data System (ADS)

Koike, Kunihiko; Yoshino, Yu; Senoo, Takehiko; Seki, Toshio; Ninomiya, Satoshi; Aoki, Takaaki; Matsuo, Jiro

2010-12-01

The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 µm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO2 was at least 1:1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

NASA Astrophysics Data System (ADS)

Duluard, C. Y.; Ranson, P.; Pichon, L. E.; Pereira, J.; Oubensaid, E. H.; Lefaucheux, P.; Puech, M.; Dussart, R.

2011-06-01

Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of -20 °C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 µm min-1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around -20 °C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection.

Laser etching of groove structures with micro-optical fiber-enhanced irradiation

PubMed Central

2012-01-01

A microfiber is used as a laser-focusing unit to fabricate a groove structure on TiAlSiN surfaces. After one laser pulse etching, a groove with the minimum width of 265 nm is manufactured at the area. This technique of microfabricating the groove in microscale is studied. Based on the near-field intensity enhancement at the contact area between the fiber and the surface during the laser irradiation, simulation results are also presented, which agree well with the experimental results. PMID:22713521

Predicting synergy in atomic layer etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanarik, Keren J.; Tan, Samantha; Yang, Wenbing

2017-03-27

Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO 2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms ofmore » energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.« less

Reaction of Si nanopowder with water investigated by FT-IR and XPS

NASA Astrophysics Data System (ADS)

Imamura, Kentaro; Kobayashi, Yuki; Matsuda, Shinsuke; Akai, Tomoki; Kobayashi, Hikaru

2017-08-01

The initial reaction of Si nanopowder with water to generate hydrogen is investigated using FT-IR and XPS measurements. Si nanopowder is fabricated using the simple beads milling method. For HF-etched Si nanopowder, strong peaks due to Si-H and Si-H2 stretching vibrational modes and a weak shoulder peak due to Si-H3 are observed. Although no peaks due to oxide is observed in the Si 2p XPS spectrum, weak vibrational peaks due to HSiO2 and HSiO3 species are observable. The hydrogen generation rate greatly increases with pH, indicating that the reacting species is hydroxide ions (OH- ions). After the reaction, the intensities of the peaks due to SiH and SiH2 species decrease while those for HSiO, HSiO2, and HSiO3 species increase. This result demonstrates that OH- ions attack Si back-bonds, with surface Si-H bonds remaining. After initial reaction of HF-etched Si nanopowder with heavy water, vibrational peaks for SiD, SiDH, and SiDH2 appear, and then, a peak due to DSiO3 species is observed, but no peaks due to DSiO2 and DSiO species are observable. This result indicates that SiD, SiDH, and SiDH2 species are formed by substitution reactions, followed by oxidation of back-bonds to form DSiO3 species. After immersion in D2O for a day, 37% H atoms on the surface are replaced to D atoms.

Homogeneous alignment of nematic liquid crystals by ion beam etched surfaces

NASA Technical Reports Server (NTRS)

Wintucky, E. G.; Mahmood, R.; Johnson, D. L.

1979-01-01

A wide range of ion beam etch parameters capable of producing uniform homogeneous alignment of nematic liquid crystals on SiO2 films are discussed. The alignment surfaces were generated by obliquely incident (angles of 5 to 25 deg) argon ions with energies in the range of 0.5 to 2.0 KeV, ion current densities of 0.1 to 0.6 mA sq cm and etch times of 1 to 9 min. A smaller range of ion beam parameters (2.0 KeV, 0.2 mA sq cm, 5 to 10 deg and 1 to 5 min.) were also investigated with ZrO2 films and found suitable for homogeneous alignment. Extinction ratios were very high (1000), twist angles were small ( or = 3 deg) and tilt-bias angles very small ( or = 1 deg). Preliminary scanning electron microscopy results indicate a parallel oriented surface structure on the ion beam etched surfaces which may determine alignment.

Plasma etching a ceramic composite. [evaluating microstructure

NASA Technical Reports Server (NTRS)

Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

1992-01-01

Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

Tailored Voltage Waveforms in an SF6 /O2 discharge: slope asymmetry and its effect on surface nanotexturing of silicon

NASA Astrophysics Data System (ADS)

Fischer, G.; Drahi, E.; Poulain, G.; Bruneau, B.; Johnson, E. V.

2016-09-01

The nanotexturing of the surface of a crystalline silicon (c-Si) wafer for improved photovoltaic performance can be achieved through the use of a SF6 /O2 capacitively coupled reactive ion etching plasma. In this study, we attempt to modify the texturing conditions by taking advantage of slope asymmetries of Tailored Voltage Waveform (TVW) excitation. We show that TVW shapes resembling ``sawtooths'', presenting a large slope asymmetry, induce high ionization asymmetries in the discharge, and that the dominance of this effect strongly depends on both gas mixture and pressure. These asymmetries have been previously observed in other electronegative gas and are due to differing plasma sheath dynamics at powered and grounded electrode in a discharge operating in drift-ambipolar mode. The texturing of c-Si in SF6 /O2 occurs through competing mechanisms, including etching by fluorine radicals and in-situ deposition of micro-masking species. The relative fluxes of etching and passivating species are expected to be strongly varied due to the plasma asymmetry. Morphological and optical characterization of textured c-Si surfaces will give more insight into both the plasma properties and the mechanisms involved in dry nanotexturing. This project has been supported by the French Government in the frame of the program of investment for the future (Programme d'Investissement d'Avenir - ANR-IEED-002-01).

MBE Regrowth of a Laterally-biased Double Quantum Well Tunable Detector

DTIC Science & Technology

2010-06-01

with 9 sccm of Ar, 9 sccm of  SiCl4  and with a power of 107 W. With these parameters, DC Bias  of 340 V was obtained and the pressure during the etching...regrowth of a laterally‐biased double quantum well tunable detector– Final Report  2010  29    The etching can be performed using only  SiCl4 , but by...following AFM images show GaAs surfaces after an etching of 500nm:                125 W, 1,5 sccm Ar, 15 sccm  SiCl4   MBE regrowth of a laterally‐biased

Fabrication and characterization of one-dimensional multilayer gratings for nanoscale microscope calibration

NASA Astrophysics Data System (ADS)

Wang, Xingrui; Zhao, Yang; Liu, Jie; Chen, Jie; Li, Tongbao; Cheng, Xinbin

2016-09-01

One-dimensional multilayer gratings were prepared by four steps. A periodic Si/SiO2 multilayer was firstly deposited on Si substrate using a magnetron sputtering coating process. Then, the multilayer was been bonded and split into small pieces by diamond wire cutting. The side-wall of the cut sample was subsequently grinded and polished until the surface roughness was less than 1nm. Finally, the SiO2 layers were selective etched using hydrofluoric acid to form the grating structure. In the above steps, special attentions were given to optimize the etching processes to achieve a uniform and smooth grating pattern. Transmission electron microscope (TEM) was used to characterize the multilayer gratings. The pitch size of the grating was evaluated by an offline image analysis algorithm and optimized processes are discussed.

Fabrication Method for LOBSTER-Eye Optics in <110> Silicon

NASA Technical Reports Server (NTRS)

Chervenak, James; Collier, Michael; Mateo, Jennette

2013-01-01

Soft x-ray optics can use narrow slots to direct x-rays into a desirable pattern on a focal plane. While square-pack, square-pore, slumped optics exist for this purpose, they are costly. Silicon (Si) is being examined as a possible low-cost replacement. A fabrication method was developed for narrow slots in <110> Si demonstrating the feasibility of stacked slot optics to replace micropores. Current micropore optics exist that have 20-micron-square pores on 26-micron pitch in glass with a depth of 1 mm and an extent of several square centimeters. Among several proposals to emulate the square pore optics are stacked slot chips with etched vertical slots. When the slots in the stack are positioned orthogonally to each other, the component will approach the soft x-ray focusing observed in the micropore optics. A specific improvement Si provides is that it can have narrower sidewalls between slots to permit greater throughput of x-rays through the optics. In general, Si can have more variation in slot geometry (width, length). Further, the sidewalls can be coated with high-Z materials to enhance reflection and potentially reduce the surface roughness of the reflecting surface. Narrow, close-packed deep slots in <110> Si have been produced using potassium hydroxide (KOH) etching and a patterned silicon nitride (SiN) mask. The achieved slot geometries have sufficient wall smoothness, as observed through scanning electron microscope (SEM) imaging, to enable evaluation of these slot plates as an optical element for soft x-rays. Etches of different angles to the crystal plane of Si were evaluated to identify a specific range of etch angles that will enable low undercut slots in the Si <110> material. These slots with the narrow sidewalls are demonstrated to several hundred microns in depth, and a technical path to 500-micron deep slots in a precision geometry of narrow, closepacked slots is feasible. Although intrinsic stress in ultrathin wall Si is observed, slots with walls approaching 1.5 microns can be achieved (a significant improvement over the 6-micron walls in micro - pore optics). The major advantages of this technique are the potential for higher x-ray throughout (due to narrow slot walls) and lower cost over the existing slumped micropore glass plates. KOH etching of smooth sidewalls has been demonstrated for many applications, suggesting its feasibility for implementation in x-ray optics. Si cannot be slumped like the micropore optics, so the focusing will be achieved with millimeter-scale slot plates that populate a spherical dome. The possibility for large-scale production exists for Si parts that is more difficult to achieve in micropore parts.

Thermal Atomic Layer Etching of SiO2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride.

PubMed

DuMont, Jaime W; Marquardt, Amy E; Cano, Austin M; George, Steven M

2017-03-22

The thermal atomic layer etching (ALE) of SiO 2 was performed using sequential reactions of trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300 °C. Ex situ X-ray reflectivity (XRR) measurements revealed that the etch rate during SiO 2 ALE was dependent on reactant pressure. SiO 2 etch rates of 0.027, 0.15, 0.20, and 0.31 Å/cycle were observed at static reactant pressures of 0.1, 0.5, 1.0, and 4.0 Torr, respectively. Ex situ spectroscopic ellipsometry (SE) measurements were in agreement with these etch rates versus reactant pressure. In situ Fourier transform infrared (FTIR) spectroscopy investigations also observed SiO 2 etching that was dependent on the static reactant pressures. The FTIR studies showed that the TMA and HF reactions displayed self-limiting behavior at the various reactant pressures. In addition, the FTIR spectra revealed that an Al 2 O 3 /aluminosilicate intermediate was present after the TMA exposures. The Al 2 O 3 /aluminosilicate intermediate is consistent with a "conversion-etch" mechanism where SiO 2 is converted by TMA to Al 2 O 3 , aluminosilicates, and reduced silicon species following a family of reactions represented by 3SiO 2 + 4Al(CH 3 ) 3 → 2Al 2 O 3 + 3Si(CH 3 ) 4 . Ex situ X-ray photoelectron spectroscopy (XPS) studies confirmed the reduction of silicon species after TMA exposures. Following the conversion reactions, HF can fluorinate the Al 2 O 3 and aluminosilicates to species such as AlF 3 and SiO x F y . Subsequently, TMA can remove the AlF 3 and SiO x F y species by ligand-exchange transmetalation reactions and then convert additional SiO 2 to Al 2 O 3 . The pressure-dependent conversion reaction of SiO 2 to Al 2 O 3 and aluminosilicates by TMA is critical for thermal SiO 2 ALE. The "conversion-etch" mechanism may also provide pathways for additional materials to be etched using thermal ALE.

Effects of silicon nanowire morphology on optical properties and hybrid solar cell performance

NASA Astrophysics Data System (ADS)

Syu, Hong-Jhang; Shiu, Shu-Chia; Hung, Yung-Jr; Lee, San-Liang; Lin, Ching-Fuh

2012-10-01

Silicon nanowire (SiNW) arrays are widespread applied on hybrid photovoltaic devices because SiNW arrays can substitute the pyramid texture and anti-reflection coating due to its strong light trapping. Also, SiNWs can be prepared through a cost-efficient process of metal-assisted chemical etching. However, though longer SiNW arrays have lower reflectance, the top of long SiNWs aggregate together to make junction synthesis difficult for SiNW/organic hybrid solar cell. To control and analyze the effect of SiNW array morphology on hybrid solar cells, here we change the metal deposition condition for metal-assisted chemical etching to obtain different SiNW array morphologies. The experiment was separated to two groups, by depositing metal, say, Ag, before etching (BE) or during etching (DE). For group BE, Ag was deposited on n-type Si (n-Si) wafers by thermal evaporation; then etched by H2O2 and HF. For group DE, n-Si was etched by Ag+ and HF directly. Ag was deposited on n-Si during etching process. Afterwards, residual Ag and SiO2 were removed by HNO3 and buffered HF, successively; then Ti and Ag were evaporated on the bottom of Si to be a cathode. Finally, SiNWs were stuck on the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) that was spincoated on the ITO coated glass to form SiNW/organic heterojunction. The results show that group BE has reflectance lower than that in group DE in solar spectrum. However, group BE has smaller power conversion efficiency (PCE) of 8.65% and short-circuit current density (Jsc) of 24.94 mA/cm2 than group DE of PCE of 9.47% and Jsc of 26.81 mA/cm2.

Transfer the multiscale texture of crystalline Si onto thin-film micromorph cell by UV nanoimprint for light trapping

NASA Astrophysics Data System (ADS)

Liu, Daiming; Wang, Qingkang; Wang, Qing

2018-05-01

Surface texturing is of great significance in light trapping for solar cells. Herein, the multiscale texture, consisting of microscale pyramids and nanoscale porous arrangement, was fabricated on crystalline Si by KOH etching and Ag-assisted HF etching processes and subsequently replicated onto glass with high fidelity by UV nanoimprint method. Light trapping of the multiscale texture was studied by spectral (reflectance, haze ratio) characterizations. Results reveal the multiscale texture provides the broadband reflection reducing, the highlighted light scattering and the additional self-cleaning behaviors. Compared with bare cell, the multiscale textured micromorph cell achieves a 4% relative increase in power conversion efficiency. This surface texturing route paves a promising way for developing low-cost, large-scale and high-efficiency solar applications.

Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Koshiishi, Masaki

2010-02-20

The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K{alpha}0.28 keV and Al K{alpha}1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K{alpha} ({approx}6 nm rms) is significantly larger than {approx}1 nm at Al K{alpha}. This can be explained by differentmore » coherent lengths at two energies.« less

Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers.

PubMed

Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Maeda, Yoshitomo; Yamasaki, Noriko Y; Mitsuda, Kazuhisa; Shirata, Takayuki; Hayashi, Takayuki; Takano, Takayuki; Maeda, Ryutaro

2010-02-20

The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K(alpha)0.28 keV and Al K(alpha)1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K(alpha) (approximately 6 nm rms) is significantly larger than approximately 1 nm at Al K(alpha). This can be explained by different coherent lengths at two energies.

Catalyst free growth of CNTs by CVD on nanoscale rough surfaces of silicon substrates

NASA Astrophysics Data System (ADS)

Damodar, D.; Sahoo, R. K.; Jacob, C.

2013-06-01

Catalyst free growth of carbon nanotubes (CNT) has been achieved using atmospheric pressure chemical vapor deposition (APCVD) on surface modified Si(111) substrates. The effect of the substrate surface has been observed by partially etching with KOH (potassium hydroxide) solution which is an anisotropic etchant. Scanning electron microscopy (SEM) confirmed the formation of CNTs over most of the area of the substrate where substrates were anisotropically etched. Transmission electron microscopy (TEM) was used to observe the internal structure of the CNTs. Raman spectroscopy further confirmed the formation of the carbon nanostructures and also their graphitic crystallinity.

Three-dimensional hybrid silicon nanostructures for surface enhanced Raman spectroscopy based molecular detection

NASA Astrophysics Data System (ADS)

Vendamani, V. S.; Nageswara Rao, S. V. S.; Venugopal Rao, S.; Kanjilal, D.; Pathak, A. P.

2018-01-01

Three-dimensional silver nanoparticles decorated vertically aligned Si nanowires (Si NWs) are effective surface-enhanced Raman spectroscopy (SERS) substrates for molecular detection at low concentration levels. The length of Si NWs prepared by silver assisted electroless etching is increased with an increase in etching time, which resulted in the reduced optical reflection in the visible region. These substrates were tested and optimized by measuring the Raman spectrum of standard dye Rhodamine 6G (R6G) of 10 nM concentration. Further, effective SERS enhancements of ˜105 and ˜104 were observed for the cytosine protein (concentration of 50 μM) and ammonium perchlorate (oxidizer used in explosives composition with a concentration of 10 μM), respectively. It is established that these three-dimensional SERS substrates yielded considerably higher enhancement factors for the detection of R6G when compared to previous reports. The sensitivity can further be increased and optimized since the Raman enhancement was found to increase with an increase in the density of silver nanoparticles decorated on the walls of Si NWs.

Antireflective surface structures in glass by self-assembly of SiO2 nanoparticles and wet etching.

PubMed

Maier, Thomas; Bach, David; Müllner, Paul; Hainberger, Rainer; Brückl, Hubert

2013-08-26

We describe the fabrication of an antireflective surface structure with sub-wavelength dimensions on a glass surface using scalable low-cost techniques involving sol-gel coating, thermal annealing, and wet chemical etching. The glass surface structure consists of sand dune like protrusions with 250 nm periodicity and a maximum peak-to-valley height of 120 nm. The antireflective structure increases the transmission of the glass up to 0.9% at 700 nm, and the transmission remains enhanced over a wide spectral range and for a wide range of incident angles. Our measurements reveal a strong polarization dependence of the transmission change.

The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

NASA Astrophysics Data System (ADS)

Liang, Hengmao; Liu, Mifeng; Liu, Song; Xu, Dehui; Xiong, Bin

2018-01-01

KOH etching and Au/Si eutectic bonding are cost-efficient technologies for 3D device fabrication. Aimed at investigating the process compatibility of KOH etching and Au/Si bonding, KOH etching tests have been carried out for Au/bulk Si and Au/amorphous Si (a-Si) bonding wafers in this paper. For the Au/bulk Si bonding wafer, a serious underetch phenomenon occurring on the damage layer in KOH etching definitely results in packaging failure. In the microstructure analysis, it is found that the formation of the damage layer between the bonded layer and bulk Si is attributed to the destruction of crystal Si lattices in Au/bulk Si eutectic reaction. Considering the occurrence of underetch for Au/Si bonding must meet two requirements: the superfluous Si and the defective layer near the bonded layer, the Au/a-Si bonding by regulating the a-Si/Au thickness ratio is presented in this study. Only when the a-Si/Au thickness ratio is relatively low are there not underetch phenomena, of which the reason is the full reaction of the a-Si layer avoiding the formation of the damage layer for easy underetch. Obviously, the Au/a-Si bonding via choosing a moderate a-Si/Au thickness ratio (⩽1.5:1 is suggested) could be reliably compatible with KOH etching, which provides an available and low-cost approach for 3D device fabrication. More importantly, the theory of the damage layer proposed in this study can be naturally applied to relevant analyses on the eutectic reaction of other metals and single crystal materials.

Ripple formation on Si surfaces during plasma etching in Cl2

NASA Astrophysics Data System (ADS)

Nakazaki, Nobuya; Matsumoto, Haruka; Sonobe, Soma; Hatsuse, Takumi; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2018-05-01

Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate surfaces. The sheath control plate consisted of an array of inclined trenches, being set into place on the rf-biased electrode, where their widths and depths were chosen in such a way that the sheath edge was pushed out of the trenches. The distortion of potential distributions and the consequent deflection of ion trajectories above and in the trenches were then analyzed based on electrostatic particle-in-cell simulations of the plasma sheath, to evaluate the angular distributions of ion fluxes incident on substrates pasted on sidewalls and/or at the bottom of the trenches. Experiments showed well-defined periodic sawtooth-like ripples with their wave vector oriented parallel to the direction of ion incidence at intermediate off-normal angles, while relatively weak corrugations or ripplelike structures with the wave vector perpendicular to it at high off-normal angles. Possible mechanisms for the formation of surface ripples during plasma etching are discussed with the help of Monte Carlo simulations of plasma-surface interactions and feature profile evolution. The results indicate the possibility of providing an alternative to ion beam sputtering for self-organized formation of ordered surface nanostructures.

Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide

NASA Astrophysics Data System (ADS)

Koh, A.; Kestle, A.; Wright, C.; Wilks, S. P.; Mawby, P. A.; Bowen, W. R.

2001-04-01

A comparative study on the effect of wet and dry thermal oxidation on 4H-silicon carbide (SiC) and on sacrificial silicon (Si) thermal oxidation on 4H-SiC surface has been conducted using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The AFM images show the formation of 'nano-islands' of varying density on the SiC surface after the removal of thermal oxide using hydrofluoric (HF) acid etch. These nano-islands are resistant to HF acid and have been previously linked to residual carbon [1-3] resulting from the oxidation process. This paper presents the use of a sacrificial silicon oxidation (SSO) step as a form of surface preparation that gives a reproducible clean SiC surface. XPS results show a slight electrical shift in binding energy between the wet and dry thermal oxidation on the standard SiC surface, while the surface produced by the SSO technique shows a minimal shift.

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuboi, Nobuyuki, E-mail: Nobuyuki.Kuboi@jp.sony.com; Tatsumi, Tetsuya; Kinoshita, Takashi

2015-11-15

The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness,more » etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching showed that the Si fin (source/drain region) was directly damaged by high energy hydrogen and had local variations in the damage distribution, which may lead to a shift in the threshold voltage and the off-state leakage current. Therefore, side-wall etching and ion implantation processes must be carefully designed by considering the Si damage distribution to achieve low damage and high transistor performance for complementary metal–oxide–semiconductor devices.« less

Dry etch challenges for CD shrinkage in memory process

NASA Astrophysics Data System (ADS)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Addition of Si-Containing Gases for Anisotropic Etching of III-V Materials in Chlorine-Based Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Gatilova, Lina; Bouchoule, Sophie; Patriarche, Gilles; Guilet, Stephane

2011-08-01

We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl2- and HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH4 or SiCl4). A vertical and smooth etching profile is demonstrated in SiCl4/H2 plasma. The effect of adding of a small amount of SiH4 to a previously optimised Cl2/H2 chemistry is presented, and new SiH4/Cl2 and SiH4/HBr chemistries are proposed. Ex-situ energy-dispersive X-ray spectroscopy coupled to transmission electron microscopy (EDX-TEM) is used to analyze the composition of the thin passivation layer deposited on the etched sidewalls. We show that it consists of a Si-rich silicon oxide (Si/O˜1) in Cl2/H2/SiH4 chemistry, and is changed to nano-crystalline (nc-) Si in SiH4/Cl2 chemistry depending on the SiH4 percentage. Moreover, we show that deep anisotropic etching of InP independent of the electrode coverplate material can be obtained via a SiOx passivation mechanism with the addition of Si-containing gases.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kokkoris, George; Boudouvis, Andreas G.; Gogolides, Evangelos

An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number of applications is presented. First, a detailed and functional set of equations for the neutral and ion flux calculations inside long trenches and holes with cylindrical symmetry is explicitly formulated. This set is based on early works [T. S. Cale and G. B. Raupp, J. Vac. Sci. Technol. B 8, 1242 (1990); V. K. Singh et al., J. Vac. Sci. Technol. B 10, 1091 (1992)], and includes new equations for themore » case of holes with cylindrical symmetry. Second, a method for the solution of the respective numerical task, i.e., one or a set of linear or nonlinear integral equations, is described. This method includes a coupling algorithm with a surface chemistry model and resolves the singularity problem of the integral equations. Third, the fluxes inside trenches and holes are compared. The flux from reemission is the major portion of the local flux at the bottom of both types of structure. The framework is applied in SiO{sub 2} etching by fluorocarbon plasmas to predict the increased intensity of reactive ion etching lag in SiO{sub 2} holes compared to trenches. It is also applied in deep Si etching: By calculating the flux of F atoms at the bottom of very high aspect ratio (up to 150) Si trenches and holes during the gas chopping process, the aspect ratio at which the flux of F atoms is eliminated and etching practically stops is estimated.« less

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

NASA Astrophysics Data System (ADS)

Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

2016-07-01

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

NASA Astrophysics Data System (ADS)

Takei, Norihisa; Shinoda, Fumiya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi; Ohmi, Hiromasa

2018-06-01

We have been developing an on-site silane (SiH4) generator based on use of the chemical etching reaction between solid silicon (Si) and the high-density H atoms that are generated in high-pressure H2 plasma. In this study, we have developed a slit-type plasma source for high-efficiency SiH4 generation. High-density H2 plasma was generated in a narrow slit-type discharge gap using a 2.45 GHz microwave power supply. The plasma’s optical emission intensity distribution along the slit was measured and the resulting distribution was reflected by both the electric power distribution and the hydrogen gas flow. Because the Si etching rate strongly affects the SiH4 generation rate, the Si etching behavior was investigated with respect to variations in the experimental parameters. The weight etch rate increased monotonically with increasing input microwave power. However, the weight etch rate decreased with increasing H2 pressure and an increasing plasma gap. This reduction in the etch rate appears to be related to shrinkage of the plasma generation area because increased input power is required to maintain a constant plasma area with increasing H2 pressure and the increasing plasma gap. Additionally, the weight etch rate also increases with increasing H2 flow rate. The SiH4 generation rate of the slit-type plasma source was also evaluated using gas-phase Fourier transform infrared absorption spectroscopy and the material utilization efficiencies of both Si and the H2 gas for SiH4 gas formation were discussed. The main etch product was determined to be SiH4 and the developed plasma source achieved a SiH4 generation rate of 10 sccm (standard cubic centimeters per minute) at an input power of 900 W. In addition, the Si utilization efficiency exceeded 60%.

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH{sub 3} surface preparation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L., E-mail: emily.warren@nrel.gov; Kibbler, Alan E.; France, Ryan M.

2015-08-24

Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH{sub 3} in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH{sub 3} etching quickly removes O and C contaminants at a relatively low temperature (690–740 °C), and creates a single-domain “A-type” As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration ofmore » III-Vs and Si at an industrial scale.« less

Advanced fabrication of Si nanowire FET structures by means of a parallel approach.

PubMed

Li, J; Pud, S; Mayer, D; Vitusevich, S

2014-07-11

In this paper we present fabricated Si nanowires (NWs) of different dimensions with enhanced electrical characteristics. The parallel fabrication process is based on nanoimprint lithography using high-quality molds, which facilitates the realization of 50 nm-wide NW field-effect transistors (FETs). The imprint molds were fabricated by using a wet chemical anisotropic etching process. The wet chemical etch results in well-defined vertical sidewalls with edge roughness (3σ) as small as 2 nm, which is about four times better compared with the roughness usually obtained for reactive-ion etching molds. The quality of the mold was studied using atomic force microscopy and scanning electron microscopy image data. The use of the high-quality mold leads to almost 100% yield during fabrication of Si NW FETs as well as to an exceptional quality of the surfaces of the devices produced. To characterize the Si NW FETs, we used noise spectroscopy as a powerful method for evaluating device performance and the reliability of structures with nanoscale dimensions. The Hooge parameter of fabricated FET structures exhibits an average value of 1.6 × 10(-3). This value reflects the high quality of Si NW FETs fabricated by means of a parallel approach that uses a nanoimprint mold and cost-efficient technology.

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

NASA Astrophysics Data System (ADS)

Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

2018-05-01

A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

NASA Astrophysics Data System (ADS)

Landesman, Jean-Pierre; Cassidy, Daniel T.; Fouchier, Marc; Pargon, Erwine; Levallois, Christophe; Mokhtari, Merwan; Jimenez, Juan; Torres, Alfredo

2018-02-01

We investigated the crystal lattice deformation that can occur during the etching of structures in bulk InP using SiNx hard masks with Ar/Cl2/CH4 chemistries in an inductively coupled plasma reactor. Two techniques were used: degree of polarization (DOP) of the photo-luminescence, which gives information on the state of mechanical stress present in the structures, and spectrally resolved cathodo-luminescence (CL) mapping. This second technique also provides elements on the mechanical stress in the samples through analysis of the spectral shift of the CL intrinsic emission lines. Preliminary DOP mapping experiments have been conducted on the SiNx hard mask patterns without etching the underlying InP. This preliminary study demonstrated the potential of DOP to map mechanical stress quantitatively in the structures. In a second step, InP patterns with various widths between 1 μm and 20 μm, and various depths between 1 μm and 6 μm, were analyzed by the 2 techniques. DOP measurements were made both on the (100) top surface of the samples and on the (110) cleaved cross section. CL measurements were made only from the (100) surface. We observed that inside the etched features, close to the vertical etched walls, there is always some compressive deformation, while it is tensile just outside the etched features. The magnitude of these effects depends on the lateral and depth dimensions of the etched structures, and on the separation between them (the tensile deformation increases between them due to some kind of proximity effect when separation decreases).

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

NASA Astrophysics Data System (ADS)

Ohno, Yutaka; Yoshida, Hideto; Takeda, Seiji; Liang, Jianbo; Shigekawa, Naoteru

2018-02-01

The intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature is examined by plane-view transmission electron microscopy (TEM) and cross-sectional scanning TEM using damage-free TEM specimens prepared only by mechanochemical etching. The bonded heterointerfaces include an As-deficient crystalline GaAs layer with a thickness of less than 1 nm and an amorphous Si layer with a thickness of approximately 3 nm, introduced by the irradiation of an Ar atom beam for surface activation before bonding. It is speculated that the interface resistance mainly originates from the As-deficient defects in the former layer.

New silicon architectures by gold-assisted chemical etching.

PubMed

Mikhael, Bechelany; Elise, Berodier; Xavier, Maeder; Sebastian, Schmitt; Johann, Michler; Laetitia, Philippe

2011-10-01

Silicon nanowires (SiNWs) were produced by nanosphere lithography and metal assisted chemical etching. The combination of these methods allows the morphology and organization control of Si NWs on a large area. From the investigation of major parameters affecting the etching such as doping type, doping concentration of the substrate, we demonstrate the formation of new Si architectures consisting of organized Si NW arrays formed on a micro/mesoporous silicon layer with different thickness. These investigations will allow us to better understand the mechanism of Si etching to enable a wide range of applications such as molecular sensing, and for thermoelectric and photovoltaic devices. © 2011 American Chemical Society

Anisotropic etching of silicon in solutions containing tensioactive compounds

NASA Astrophysics Data System (ADS)

Zubel, Irena

2016-12-01

The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

Nanostructured gold and platinum electrodes on silicon structures for biosensing

NASA Astrophysics Data System (ADS)

Ogurtsov, V. I.; Sheehan, M. M.

2005-01-01

Gold and platinum metal electrodes on Si/SiO2 having undergone anisotropic potassium hydroxide (KOH) etch treatment are considered. This treatment etches at different rates and directions in the material resulting in creation of numerous pyramid shaped holes in the silicon substrate. This surface is used to make metal electrodes with increased electrode efficiency. The electrodes can serve as the sensors or as the sensor substrates (for surface polymer modification) and because both gold and platinum are inert they have applications for food safety biosensing. Wine, an economically significant food product, was chosen as a matrix, and impedance spectroscopy (EIS) was selected as a method of investigation of electrode behaviour. Based on results of EIS, different complexity equivalent circuits were determined by applying fitting mean square root optimisation of sensor complex impedance measurements.

The natural weathering of staurolite: crystal-surface textures, relative stability, and the rate-determining step

Treesearch

Michael A. Velbel; Charles L. Basso; Michael J. Zieg

1996-01-01

Mineral surface-textures on naturally weathered crystals of staurolite [monoclinic, pseudo-orthorhombic; Fe4Al18Si8O46(OH)2] indicate that staurolite weathering is generally interface-limited. Etch pits on naturally weathered staurolites are disk-shaped,...

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

PubMed Central

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-01-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

NASA Astrophysics Data System (ADS)

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-12-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400-900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.

Ultrafast optical measurements of surface waves on a patterned layered nanostructure

NASA Astrophysics Data System (ADS)

Daly, Brian; Bjornsson, Matteo; Connolly, Aine; Mahat, Sushant; Rachmilowitz, Bryan; Antonelli, George; Myers, Alan; Yoo, Hui-Jae; Singh, Kanwal; King, Sean

2015-03-01

We report ultrafast optical pump-probe measurements of 12 - 54 GHz surface acoustic waves (SAWs) on patterned layered nanostructures. These very high frequency SAWs were generated and detected on the following patterned film stack: 25 nm physically vapor deposited TiN / 180 nm porous PECVD-grown a-SiOC:H dielectric / 12 nm non-porous PECVD-grown a-SiOC:H etch-stop / 100 nm CVD-grown a-SiO2 / Si (100) substrate. The TiN layer was dry plasma etched to form lines of rectangular cross section with pitches of 420 nm, 250 nm, 180 nm, and 168 nm and the lines were oriented parallel to the [110] direction on the wafer surface. The absorption of ultrafast pulses from a Ti:sapphire oscillator operating at 800 nm generated SAWs that were detected by time-delayed probe pulses from the same oscillator via a reflectivity change (ΔR) . In each of the four cases the SAW frequency increased with decreasing pitch, but not in a linear way as had been seen in previous experiments of this sort. By comparing the results with mechanical simulations, we present evidence for the detection of different types of SAWs in each case, including Rayleigh-like waves, Sezawa waves, and leaky or radiative waves. This work was supported by NSF Award DMR1206681.

Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes

NASA Astrophysics Data System (ADS)

de Buttet, Côme; Prevost, Emilie; Campo, Alain; Garnier, Philippe; Zoll, Stephane; Vallier, Laurent; Cunge, Gilles; Maury, Patrick; Massin, Thomas; Chhun, Sonarith

2017-03-01

Today the IC manufacturing faces lots of problematics linked to the continuous down scaling of printed structures. Some of those issues are related to wet processing, which are often used in the IC manufacturing flow for wafer cleaning, material etching and surface preparation. In the current work we summarize the limitations for the next nodes of wet processing such as metallic contaminations, wafer charging, corrosion and pattern collapse. As a replacement, we promoted the isotropic chemical dry etching (CDE) which is supposed to fix all the above drawbacks. Etching steps of SI3N4 layers were evaluated in order to prove the interest of such technique.

Effect of rapid oxidation on optical and electrical properties of silicon nanowires obtained by chemical etching

NASA Astrophysics Data System (ADS)

Karyaoui, M.; Bardaoui, A.; Ben Rabha, M.; Harmand, J. C.; Amlouk, M.

2012-05-01

In the present work, we report the investigation of passivated silicon nanowires (SiNWs) having an average radius of 3.7 μm, obtained by chemical etching of p-type silicon (p-Si). The surface passivation of the SiNWs was performed through a rapid oxidation conducted under a controlled atmosphere at different temperatures and durations. The morphology of the SiNWs was examined using a scanning electron microscope (SEM) that revealed a wave-like structure of dense and vertically aligned one-dimensional silicon nanostructures. On the other hand, optical and electrical characterizations of the SiNWs were studied using a UV-Vis-NIR spectrometer, the Fourier transform infrared spectroscopy (FTIR) and I-V measurements. The reflectance of SiNWs has been dropped to approximately 2% in comparison to that of bare p-Si. This low reflectance slightly increased after carrying out the rapid thermal annealing. The observed behavior was attributed to the formation of a SiO2 layer, as confirmed by FTIR measurements. Finally, the electrical measurements have shown that the rapid oxidation, at certain conditions, contributes to the improvement of the electrical responses of the SiNWs, which can be of great interest for photovoltaic applications.

Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Ankur; Kushner, Mark J.; Iowa State University, Department of Electrical and Computer Engineering, 104 Marston Hall, Ames, Iowa 50011-2151

2005-09-15

The distributions of ion energies incident on the wafer significantly influence feature profiles and selectivity during plasma etching. Control of ion energies is typically obtained by varying the amplitude or frequency of a radio frequency sinusoidal bias voltage applied to the substrate. The resulting ion energy distribution (IED), though, is generally broad. Controlling the width and shape of the IED can potentially improve etch selectivity by distinguishing between threshold energies of surface processes. In this article, control of the IED was computationally investigated by applying a tailored, nonsinusoidal bias waveform to the substrate of an inductively coupled plasma. The waveformmore » we investigated, a quasi-dc negative bias having a short positive pulse each cycle, produced a narrow IED whose width was controllable based on the length of the positive spike and frequency. We found that the selectivity between etching Si and SiO{sub 2} in fluorocarbon plasmas could be controlled by adjusting the width and energy of the IED. Control of the energy of a narrow IED enables etching recipes that transition between speed and selectivity without change of gas mixture.« less

Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

NASA Astrophysics Data System (ADS)

Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

2016-11-01

We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

Processing for Highly Efficient AlGaN/GaN Emitters

DTIC Science & Technology

2009-09-09

effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The...was the as-grown GaN layer without any surface treatment while sample 2 was treated with SiCl4 plasma in a reactive ion etching (RIE) system with a...plasma self-bias voltage of −300 V for 60 s. Samples 3, 4, and 5 were treated with SiCl4 plasma and followed by a 2-min dip in NH4OH, HCl, and BOE

Recovery of EUVL substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vernon, S.P.; Baker, S.L.

1995-01-19

Mo/Si multilayers, were removed from superpolished zerodur and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

4H-SiC surface energy tuning by nitrogen up-take

NASA Astrophysics Data System (ADS)

Pitthan, E.; Amarasinghe, V. P.; Xu, C.; Gustafsson, T.; Stedile, F. C.; Feldman, L. C.

2017-04-01

Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu; Li, Chen

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and comparedmore » to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Inorganic Bi/In thermal resist as a high-etch-ratio patterning layer for CF4/CHF3/O2 plasma etch

NASA Astrophysics Data System (ADS)

Tu, Yuqiang; Chapman, Glenn H.; Peng, Jun

2004-05-01

Bimetallic thin films containing indium and with low eutectic points, such as Bi/In, have been found to form highly sensitive thermal resists. They can be exposed by lasers with a wide range of wavelengths and be developed by diluted RCA2 solutions. The exposed bimetallic resist Bi/In can work as an etch masking layer for alkaline-based (KOH, TMAH and EDP) "wet" Si anisotropic etching. Current research shows that it can also act as a patterning and masking layer for Si and SiO2 plasma "dry" etch using CF4/CHF3. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In, indicating that laser exposure is an oxidation process. Experiment result shows that single metal Indium film and bilayer Sn/In exhibit thermal resist characteristics but at higher exposure levels. They can be developed in diluted RCA2 solution and used as etch mask layers for Si anisotropic etch and plasma etch.

Bioinspired periodic pinecone-shaped Si subwavelength nanostructures for broadband and omnidirectional antireflective surface.

PubMed

Leem, Jung Woo; Yu, Jae Su

2012-10-01

We reported the bioinspired periodic pinecone-shaped silicon (Si) subwavelength nanostructures, which were fabricated by laser interference lithography and inductively coupled plasma etching using thermally dewetted gold (Au) nanoparticles in SiCl4 plasma, on Si substrates for broadband and wide-angle antireflective surface. For the fabricated pinecone-like Si subwavelength nanostructures, antireflection characteristics and wetting behaviors were investigated. The pinecone-shaped Si subwavelength nanostructure with a period of 320 nm for 7 nm of Au film exhibited a relatively low solar weighted reflectance value of 3.5% over a wide wavelength range of 300-1030 nm, maintaining the reflectance values of < 9.9% at a wavelength of 550 nm up to a high incident angle of theta(i) = 70 degrees for non-polarized light. This structure also showed a hydrophobic surface with a water contact angle of theta(c) approximately 102 degrees.

Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels

NASA Astrophysics Data System (ADS)

Wuu, Dong-Sing; Horng, Ray-Hua; Chan, Chia-Chi; Lee, Yih-Shing

1999-04-01

The stress properties of the a-SiC:H films on Si by plasma-enhanced chemical vapor deposition (PECVD) are investigated. It is found that the stability of the a-SiC:H films relates to Si-H bonds breaking and changes the stress toward tensile. No evident reduction in the content of Si-H bonds after thermal cycles was found in the carbon-rich samples. Moreover, a new method to fabricate microchannels by through-hole etching with subsequent planarization is proposed. The process is based on etching out the deep grooves through a perforated a-SiC:H membrane, where poly-Si is used as a sacrificial layer to define the channel structure, followed by PECVD sealing the SiC:H membrane. In order to improve the etching performance, the agitated KOH etch is performed at low temperatures (<50°C). The process technology is demonstrated on the fabrication of microfluidic channels with the low-stress (<0.1 GPa) a-SiC:H membranes.

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

Recovery of Multilayer-Coated Zerodur and ULE Optics for Extreme-Ultraviolet Lithography by Recoating, Reactive-Ion Etching, and Wet-Chemical Processes.

PubMed

Mirkarimi, P B; Baker, S L; Montcalm, C; Folta, J A

2001-01-01

Extreme-ultraviolet lithography requires expensive multilayer-coated Zerodur or ULE optics with extremely tight figure and finish specifications. Therefore it is desirable to develop methods to recover these optics if they are coated with a nonoptimum multilayer films or in the event that the coating deteriorates over time owing to long-term exposure to radiation, corrosion, or surface contamination. We evaluate recoating, reactive-ion etching, and wet-chemical techniques for the recovery of Mo/Si and Mo/Be multilayer films upon Zerodur and ULE test optics. The recoating technique was successfully employed in the recovery of Mo/Si-coated optics but has the drawback of limited applicability. A chlorine-based reactive-ion etch process was successfully used to recover Mo/Si-coated optics, and a particularly large process window was observed when ULE optics were employed; this is an advantageous for large, curved optics. Dilute HCl wet-chemical techniques were developed and successfully demonstrated for the recovery of Mo/Be-coated optics as well as for Mo/Si-coated optics when Mo/Be release layers were employed; however, there are questions about the extendability of the HCl process to large optics and multiple coat and strip cycles. The technique of using carbon barrier layers to protect the optic during removal of Mo/Si in HF:HNO(3) also showed promise.

Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060; Wang, Chao, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn

2016-08-01

We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to themore » fabrication of nanodevices and nanosurfaces.« less

Novel passivation dielectrics-The boron- or phosphorus-doped hydrogenated amorphous silicon carbide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C.Y.; Fang, Y.K.; Huang, C.F.

1985-02-01

Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared and studied in a radiofrequency glowdischarge system, using a gas mixture of SiH/sub 4/ and one of the following carbon sources: methane (CH/sub 4/), benzene (C/sub 6/H/sub 6/), toluene (C/sub 7/H/sub 8/), sigma-xylene (C/sub 8/H/sub 10/), trichloroethane (C/sub 2/H/sub 3/Cl/sub 3/), trichloroethylene (C/sub 2/HCl/sub 3/), or carbon tetrachloride (CCl/sub 4/). The effect of doping phosphorus and boron into those a-SiC:H films on chemical etching rate, electrica dc resistivity, breakdown strength, and optical refractive index have been systematically investigated. Their chemical etching properties were examined by immersing in 49% HF, buffered HF,more » 180/sup 0/C H/sub 3/PO/sub 4/ solutions, or in CF/sub 4/ + O/sub 2/ plasma. It was found that the boron-doped a-SiC:H film possesses five times slower etching rate than the undoped one, while phosphorus-doped a-SiC:H film shows about three times slower. Among those a-SiC:H films, the one obtained from a mixture of SiH/sub 4/ and benzene shows the best etch-resistant property, while the ones obtained from a mixture of SiH/sub 4/ and chlorine containing carbon sources (e.g., trichloroethylene, trichloroethane, or carbon tetrachloride) shows that they are poor in etching resistance (i.e., the etching rate is higher). By measuring dc resistivity, dielectric breakdown strength, and effective refractive index, it was found that boron- or phosphorus-doped a-SiC:H films exhibit much higher dielectric strength and resistivity, but lower etching rate, presumably because of higher density.« less

An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear.

PubMed

Zhou, Zhi-Quan; Hu, Fei; Zhou, Wen-Jie; Chen, Hong-Yan; Ma, Lei; Zhang, Chi; Lu, Ming

2017-12-15

Crystalline-Si (c-Si) solar cell with black Si (b-Si) layer at the rear was studied in order to develop c-Si solar cell with sub-band gap photovoltaic response. The b-Si was made by chemical etching. The c-Si solar cell with b-Si at the rear was found to perform far better than that of similar structure but with no b-Si at the rear, with the efficiency being increased relatively by 27.7%. This finding was interesting as b-Si had a large specific surface area, which could cause high surface recombination and degradation of solar cell performance. A graded band gap was found to form at the rear of the c-Si solar cell with b-Si layer at the rear. This graded band gap tended to expel free electrons away from the rear, thus reducing the probability of electron-hole recombination at b-Si and improving the performance of c-Si solar cell.

Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

2004-12-01

Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis R.; Griffin, Ben

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Finite-Element Modeling of 3C-SiC Membranes

NASA Technical Reports Server (NTRS)

DeAnna, R. G.; Mitchell, J.; Zorman, C. A.; Mehregany, M.

2000-01-01

Finite-element modeling (FEM) of 3C-SiC thin-film membranes on Si substrates was used to determine the residual stress and center deflection with applied pressure. The anisotropic, three-dimensional model includes the entire 3C-SiC membrane and Si substrate with appropriate material properties and boundary conditions. Residual stress due to the thermal-expansion-coefficient mismatch between the3C-SiC film and Si substrate was included in the model. Both before-and after-etching, residual stresses were calculated. In-plane membrane stress and normal deflection with applied pressure were also calculated. FEM results predict a tensile residual stress fo 259 MPa in the 3C-SiC membrane before etching. This decreases to 247 MPa after etching the substrate below the membrane. The residual stress experimentally measured on sample made at Case Western Reserve University was 280 MPa on post-etched membranes. This is excellent agreement when an additional 30-40 MPa of residual stress to account for lattice mismatch is added to the FEM results.

Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching

PubMed Central

2013-01-01

We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution. PMID:23557325

Morphological Study on Porous Silicon Carbide Membrane Fabricated by Double-Step Electrochemical Etching

NASA Astrophysics Data System (ADS)

Omiya, Takuma; Tanaka, Akira; Shimomura, Masaru

2012-07-01

The structure of porous silicon carbide membranes that peeled off spontaneously during electrochemical etching was studied. They were fabricated from n-type 6H SiC(0001) wafers by a double-step electrochemical etching process in a hydrofluoric electrolyte. Nanoporous membranes were obtained after double-step etching with current densities of 10-20 and 60-100 mA/cm2 in the first and second steps, respectively. Microporous membranes were also fabricated after double-step etching with current densities of 100 and 200 mA/cm2. It was found that the pore diameter is influenced by the etching current in step 1, and that a higher current is required in step 2 when the current in step 1 is increased. During the etching processes in steps 1 and 2, vertical nanopore and lateral crack formations proceed, respectively. The influx pathway of hydrofluoric solution, expansion of generated gases, and transfer limitation of positive holes to the pore surface are the key factors in the peeling-off mechanism of the membrane.

Surface etching technologies for monocrystalline silicon wafer solar cells

NASA Astrophysics Data System (ADS)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

The improvement of adhesive properties of PEEK through different pre-treatments

NASA Astrophysics Data System (ADS)

Hallmann, Lubica; Mehl, Albert; Sereno, Nuno; Hämmerle, Christoph H. F.

2012-07-01

The purpose of this in vitro study was the evaluation of the bond strength of the adhesives/composite resin to Poly Ether Ether Ketone (PEEK) based dental polymer after using different surface conditioning methods. PEEK blanks were cut into discs. All disc specimens were polished with 800 grit SiC paper and divided into 6 main groups. Main groups were divided into 2 subgroups. The main groups of 32 specimens each were treated as follow: (1) control specimens (no treatment), (2) piranha solution etching, (3) abraded with 50 μm alumina particles and chemical etching, (4) abraded with 110 μm alumina particles and chemical etching, (5) abraded with 30 μm silica-coated alumina particles and chemical etching, (6) abraded with 110 μm silica-coated alumina particles and chemical etching. Plexiglas tubes filled with a composite resin (RelyX Unicem) were bonded to the specimens. The adhesives used were Heliobond and Clearfil Ceramic Primer. Each specimen was stored in distilled water (37 °C) for 3 days. Tensile bond strength was measured in a universal testing machine and failure methods were evaluated. Abraded surface with 50 μm alumina particles followed by etching with piranha solution lead to the highest bond strength of 21.4 MPa when Heliobond like adhesive was used. Tribochemical silica coated/etched PEEK surfaces did not have an effect on the bond strength. Non-treated PEEK surface was not able to establish a bond with composite resin. The proper choice of adhesive/composite resin system leads to a strong bond. ConclusionAirborne particle abrasion in combination with piranha solution etching improves the adhesive properties of PEEK.

Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

NASA Astrophysics Data System (ADS)

O, Ryong-Sok; Takamura, Makoto; Furukawa, Kazuaki; Nagase, Masao; Hibino, Hiroki

2015-03-01

We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 µm/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.

Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

PubMed

Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

2016-03-01

We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

ScAlN etch mask for highly selective silicon etching

DOE PAGES

Henry, Michael David; Young, Travis R.; Griffin, Ben

2017-09-08

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

High Sensitivity and High Detection Specificity of Gold-Nanoparticle-Grafted Nanostructured Silicon Mass Spectrometry for Glucose Analysis.

PubMed

Tsao, Chia-Wen; Yang, Zhi-Jie

2015-10-14

Desorption/ionization on silicon (DIOS) is a high-performance matrix-free mass spectrometry (MS) analysis method that involves using silicon nanostructures as a matrix for MS desorption/ionization. In this study, gold nanoparticles grafted onto a nanostructured silicon (AuNPs-nSi) surface were demonstrated as a DIOS-MS analysis approach with high sensitivity and high detection specificity for glucose detection. A glucose sample deposited on the AuNPs-nSi surface was directly catalyzed to negatively charged gluconic acid molecules on a single AuNPs-nSi chip for MS analysis. The AuNPs-nSi surface was fabricated using two electroless deposition steps and one electroless etching step. The effects of the electroless fabrication parameters on the glucose detection efficiency were evaluated. Practical application of AuNPs-nSi MS glucose analysis in urine samples was also demonstrated in this study.

Flower-like ZnO nanorod arrays grown on HF-etched Si (111): constraining relation between ZnO seed layer and Si (111)

NASA Astrophysics Data System (ADS)

Brahma, Sanjaya; Liu, C.-W.; Huang, R.-J.; Chang, S.-J.; Lo, K.-Y.

2015-11-01

We demonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.

SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect

NASA Astrophysics Data System (ADS)

Ooka, Masahiro; Yokoyama, Shin

2004-06-01

The etching of contact holes of 0.1 μm size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the radio frequency (rf) power is extended.

Optimization of plasma etching of SiO2 as hard mask for HgCdTe dry etching

NASA Astrophysics Data System (ADS)

Chen, Yiyu; Ye, Zhenhua; Sun, Changhong; Zhang, Shan; Xin, Wen; Hu, Xiaoning; Ding, Ruijun; He, Li

2016-10-01

HgCdTe is one of the dominating materials for infrared detection. To pattern this material, our group has proven the feasibility of SiO2 as a hard mask in dry etching process. In recent years, the SiO2 mask patterned by plasma with an auto-stopping layer of ZnS sandwiched between HgCdTe and SiO2 has been developed by our group. In this article, we will report the optimization of SiO2 etching on HgCdTe. The etching of SiO2 is very mature nowadays. Multiple etching recipes with deferent gas mixtures can be used. We utilized a recipe containing Ar and CHF3. With strictly controlled photolithography, the high aspect-ratio profile of SiO2 was firstly achieved on GaAs substrate. However, the same recipe could not work well on MCT because of the low thermal conductivity of HgCdTe and CdTe, resulting in overheated and deteriorated photoresist. By decreasing the temperature, the photoresist maintained its good profile. A starting table temperature around -5°C worked well enough. And a steep profile was achieved as checked by the SEM. Further decreasing of temperature introduced profile with beveled corner. The process window of the temperature is around 10°C. Reproducibility and uniformity were also confirmed for this recipe.

Micro-pyramidal structure fabrication on polydimethylsiloxane (PDMS) by Si (100) KOH wet etching

NASA Astrophysics Data System (ADS)

Hwang, Shinae; Lim, Kyungsuk; Shin, Hyeseon; Lee, Seongjae; Jang, Moongyu

2017-10-01

A high degree of accuracy in bulk micromachining is essential to fabricate micro-electro-mechanical systems (MEMS) devices. A series of etching experiments is carried out using 40 wt% KOH solutions at the constant temperature of 70 °C. Before wet etching, SF6 and O2 are used as the dry etching gas to etch the masking layers of a 100 nm thick Si3N4 and SiO2, respectively. The experimental results indicate that (100) silicon wafer form the pyramidal structures with (111) single crystal planes. All the etch profiles are analyzed using Scanning Electron Microscope (SEM) and the wet etch rates depend on the opening sizes. The manufactured pyramidal structures are used as the pattern of silicon mold. After a short hardening of coated polydimethylsiloxane (PDMS) layer, micro pyramidal structures are easily transferred to PDMS layer.

Investigation of direct current electrical properties of electrochemically etched mesoporous silicon carbide

NASA Astrophysics Data System (ADS)

Gautier, G.; Biscarrat, J.; Defforge, T.; Fèvre, A.; Valente, D.; Gary, A.; Menard, S.

2014-12-01

In this study, we show I-V characterizations of various metal/porous silicon carbide (pSiC)/silicon carbide (SiC) structures. SiC wafers were electrochemically etched from the Si and C faces in the dark or under UV lighting leading to different pSiC morphologies. In the case of low porosity pSiC etched in the dark, the I-V characteristics were found to be almost linear and the extracted resistivities of pSiC were around 1.5 × 104 Ω cm at 30 °C for the Si face. This is around 6 orders of magnitude higher than the resistivity of doped SiC wafers. In the range of 20-200 °C, the activation energy was around 50 meV. pSiC obtained from the C face was less porous and the measured average resistivity was 10 Ω cm. In the case high porosity pSiC etched under UV illumination, the resistivity was found to be much higher, around 1014 Ω cm at room temperature. In this case, the extracted activation energy was estimated to be 290 meV.

SiGe derivatization by spontaneous reduction of aryl diazonium salts

NASA Astrophysics Data System (ADS)

Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

2013-10-01

Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

Silicon Quantum Dot Nanoparticles with Antifouling Coatings for Immunostaining on Live Cancer Cells.

PubMed

Tu, Chang-Ching; Chen, Kuang-Po; Yang, Tsu-An; Chou, Min-Yuan; Lin, Lih Y; Li, Yaw-Kuen

2016-06-08

Fluorescent silicon quantum dots (SiQDs) have shown a great potential as antiphotobleaching, nontoxic and biodegradable labels for various in vitro and in vivo applications. However, fabricating SiQDs with high water-solubility and high photoluminescence quantum yield (PLQY) remains a challenge. Furthermore, for targeted imaging, their surface chemistry has to be capable of conjugating to antibodies, as well as sufficiently antifouling. Herein, antibody-conjugated SiQD nanoparticles (SiQD-NPs) with antifouling coatings composed of bovine serum albumin (BSA) and polyethylene glycol (PEG) are demonstrated for immunostaining on live cancer cells. The monodisperse SiQD-NPs of diameter about 130 nm are synthesized by a novel top-down method, including electrochemical etching, photochemical hydrosilylation, high energy ball milling, and "selective-etching" in HNO3 and HF. Subsequently, the BSA and PEG are covalently grafted on to the SiQD-NP surface through presynthesized chemical linkers, resulting in a stable, hydrophilic, and antifouling organic capping layer with isothiocyanates as the terminal functional groups for facile conjugation to the antibodies. The in vitro cell viability assay reveals that the BSA-coated SiQD-NPs had exceptional biocompatibility, with minimal cytotoxicity at concentration up to 1600 μg mL(-1). Under 365 nm excitation, the SiQD-NP colloid emits bright reddish photoluminescence with PLQY = 45-55% in organic solvent and 5-10% in aqueous buffer. Finally, through confocal fluorescent imaging and flow cytometry analysis, the anti-HER2 conjugated SiQD-NPs show obvious specific binding to the HER2-overexpressing SKOV3 cells and negligible nonspecific binding to the HER2-nonexpressing CHO cells. Under similar experimental conditions, the immunofluorescence results obtained with the SiQD-NPs are comparable to those using conventional fluorescein isothiocyanate (FITC).

Optimizing non-radiative energy transfer in hybrid colloidal-nanocrystal/silicon structures by controlled nanopillar architectures for future photovoltaic cells

NASA Astrophysics Data System (ADS)

Seitz, O.; Caillard, L.; Nguyen, H. M.; Chiles, C.; Chabal, Y. J.; Malko, A. V.

2012-01-01

To optimize colloidal nanocrystals/Si hybrid structures, nanopillars are prepared and organized via microparticle patterning and Si etching. A monolayer of CdSe nanocrystals is then grafted on the passivated oxide-free nanopillar surfaces, functionalized with carboxy-alkyl chain linkers. This process results to a negligible number of non-radiative surface state defects with a tightly controlled separation between the nanocrystals and Si. Steady-state and time-resolved photoluminescence measurements confirm the close-packing nanocrystal arrangement and the dominance of non-radiative energy transfer from nanocrystals to Si. We suggest that radially doped p-n junction devices based on energy transfer offer a viable approach for thin film photovoltaic devices.

Nanoscale Etching and Indentation of Silicon Surfaces with Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Dzegilenko, Fedor N.; Srivastava, Deepak; Saini, Subhash

1998-01-01

The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for nanolithography on silicon are discussed in detail.

A simplified biomolecule attachment strategy for biosensing using a porous Si oxide interferometer

PubMed Central

Perelman, Loren A.; Schwartz, Michael P.; Wohlrab, Aaron M.; VanNieuwenhze, Michael S.; Sailor, Michael J.

2008-01-01

A simple strategy for linking biomolecules to porous Si surfaces and detecting peptide/drug binding is described. Porous Si is prepared using an electrochemical etch and then thermally oxidized by heating in ambient atmosphere. Bovine serum albumin (BSA) is then non-covalently adsorbed to the inner pore walls of the porous Si oxide (PSiO2) matrix. The BSA layer is used as a linker for covalent attachment of the peptide Ac-L-Lysine-D-Alanine-D-Alanine (KAA) using published bioconjugation chemistry. BSA-coated surfaces functionalized with KAA display specificity for the glycopeptide vancomycin while resisting adsorption of non-specific reagents. While the biomolecule attachment strategy reported here is used to bind peptides, the scheme can be generalized to the linking of any primary amine-containing molecule to PSiO2 surfaces. PMID:18458749

Refractive index sensing in the visible/NIR spectrum using silicon nanopillar arrays.

PubMed

Visser, D; Choudhury, B Dev; Krasovska, I; Anand, S

2017-05-29

Si nanopillar (NP) arrays are investigated as refractive index sensors in the visible/NIR wavelength range, suitable for Si photodetector responsivity. The NP arrays are fabricated by nanoimprint lithography and dry etching, and coated with thin dielectric layers. The reflectivity peaks obtained by finite-difference time-domain (FDTD) simulations show a linear shift with coating layer thickness. At 730 nm wavelength, sensitivities of ~0.3 and ~0.9 nm/nm of SiO 2 and Si 3 N 4 , respectively, are obtained; and the optical thicknesses of the deposited surface coatings are determined by comparing the experimental and simulated data. The results show that NP arrays can be used for sensing surface bio-layers. The proposed method could be useful to determine the optical thickness of surface coatings, conformal and non-conformal, in NP-based optical devices.

Controlling Kink Geometry in Nanowires Fabricated by Alternating Metal-Assisted Chemical Etching.

PubMed

Chen, Yun; Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Xin; Gao, Jian; Wong, Ching-Ping

2017-02-08

Kinked silicon (Si) nanowires (NWs) have many special properties that make them attractive for a number of applications, such as microfluidics devices, microelectronic devices, and biosensors. However, fabricating NWs with controlled three-dimensional (3D) geometry has been challenging. In this work, a novel method called alternating metal-assisted chemical etching is reported for the fabrication of kinked Si NWs with controlled 3D geometry. By the use of multiple etchants with carefully selected composition, one can control the number of kinks, their locations, and their angles by controlling the number of etchant alternations and the time in each etchant. The resulting number of kinks equals the number times the etchant is alternated, the length of each segment separated by kinks has a linear relationship with the etching time, and the kinking angle is related to the surface tension and viscosity of the etchants. This facile method may provide a feasible and economical way to fabricate novel silicon nanowires, nanostructures, and devices for broad applications.

Hybrid quantum and molecular mechanics embedded cluster models for chemistry on silicon and silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Shoemaker, James Richard

Fabrication of silicon carbide (SiC) semiconductor devices are of interest for aerospace applications because of their high-temperature tolerance. Growth of an insulating SiO2 layer on SiC by oxidation is a poorly understood process, and sometimes produces interface defects that degrade device performance. Accurate theoretical models of surface chemistry, using quantum mechanics (QM), do not exist because of the huge computational cost of solving Schrodinger's equation for a molecular cluster large enough to represent a surface. Molecular mechanics (MM), which describes a molecule as a collection of atoms interacting through classical potentials, is a fast computational method, good at predicting molecular structure, but cannot accurately model chemical reactions. A new hybrid QM/MM computational method for surface chemistry was developed and applied to silicon and SiC surfaces. The addition of MM steric constraints was shown to have a large effect on the energetics of O atom adsorption on SiC. Adsorption of O atoms on Si-terminated SiC(111) favors above surface sites, in contrast to Si(111), but favors subsurface adsorption sites on C- terminated SiC(111). This difference, and the energetics of C atom etching via CO2 desorption, can explain the observed poor performance of SiC devices in which insulating layers were grown on C-terminated surfaces.

A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

PubMed Central

Ferro, Gabriel; Chaussende, Didier

2017-01-01

Nitrogen doping of 4H-SiC during vapor phase epitaxy is still lacking of a general model explaining the apparently contradictory trends obtained by different teams. In this paper, the evolutions of nitrogen incorporation (on both polar Si and C faces) as a function of the main growth parameters (C/Si ratio, temperature, pressure and growth rate) are reviewed and explained using a model based on surface exchanges between the gas phase and the uppermost 4H-SiC atomic layers. In this model, N incorporation is driven mainly by the transient formation of C vacancies, due to H2 etching, at the surface or near the surface. It is shown that all the growth parameters are influencing the probability of C vacancies formation in a similar manner as they do for N incorporation. The surface exchange model proposes a new framework for explaining the experimental results even beyond the commonly accepted reactor type dependency. PMID:28211528

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

PubMed Central

Wu, Kuen-Hsien; Li, Chong-Wei

2015-01-01

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells. PMID:28793542

Paraboloid Structured Silicon Surface for Enhanced Light Absorption: Experimental and Simulative Investigations

NASA Astrophysics Data System (ADS)

Khan, Firoz; Baek, Seong-Ho; Kaur, Jasmeet; Fareed, Imran; Mobin, Abdul; Kim, Jae Hyun

2015-09-01

In this paper, we present an optical model that simulates the light trapping and scattering effects of a paraboloid texture surface first time. This model was experimentally verified by measuring the reflectance values of the periodically textured silicon (Si) surface with the shape of a paraboloid under different conditions. A paraboloid texture surface was obtained by electrochemical etching Si in the solution of hydrofluoric acid, dimethylsulfoxide (DMSO), and deionized (DI) water. The paraboloid texture surface has the advantage of giving a lower reflectance value than the hemispherical, random pyramidal, and regular pyramidal texture surfaces. In the case of parabola, the light can be concentrated in the direction of the Si surface compared to the hemispherical, random pyramidal, and regular pyramidal textured surfaces. Furthermore, in a paraboloid textured surface, there can be a maximum value of 4 or even more by anisotropic etching duration compared to the hemispherical or pyramidal textured surfaces which have a maximum h/ D (depth and diameter of the texture) value of 0.5. The reflectance values were found to be strongly dependent on the h/ D ratio of the texture surface. The measured reflectance values were well matched with the simulated ones. The minimum reflectance value of ~4 % was obtained at a wavelength of 600 nm for an h/ D ratio of 3.75. The simulation results showed that the reflectance value for the h/ D ratio can be reduced to ~0.5 % by reducing the separations among the textures. This periodic paraboloidal structure can be applied to the surface texturing technique by substituting with a conventional pyramid textured surface or moth-eye antireflection coating.

Biofunctionalized silicon nitride platform for sensing applications.

PubMed

Hoi, Hiofan; Rezaie, Salva S; Gong, Lu; Sen, Payel; Zeng, Hongbo; Montemagno, Carlo; Gupta, Manisha

2018-04-15

Silicon nitride (SiN x ) based biosensors have the potential to converge on the technological achievements of semiconductor microfabrication and biotechnology. Development of biofunctionalized SiN x surface and its integration with other devices will allow us to integrate the biosensing capability with probe control, data acquisition and data processing. Here we use the hydrogen plasma generated by inductively coupled plasma-reactive ion etching (ICP-RIE) technique to produce amino-functionality on the surface of SiN x which can then be readily used for biomolecule immobilization. ICP-RIE produces high-density hydrogen ions/radicals at low energy, which produces high-density amino group on the SiN x surface within a short duration of time and with minimal surface damage. In this work, we have demonstrated selective amination of SiN x surface as compared to Si surface. The as-activated SiN x surface can be readily biofunctionalized with both protein and oligonucleotide through covalent immobilization. N-5-azido-2-nitrobenzoyloxysuccinimide, a photoactivable amino reactive bifunctional crosslinker, was used and greater than 90% surface coverage was achieved for protein immobilization. In addition, ssDNA immobilization and hybridization with its complemented strand was shown. Thus, we demonstrate a uniform, reliable, fast and economical technique for creating biofunctionalized SiN x surface that can be used for developing compact high-sensitivity biosensors. Copyright © 2017 Elsevier B.V. All rights reserved.

Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

NASA Astrophysics Data System (ADS)

Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

2016-07-01

Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

Simultaneous fabrication of very high aspect ratio positive nano- to milliscale structures.

PubMed

Chen, Long Qing; Chan-Park, Mary B; Zhang, Qing; Chen, Peng; Li, Chang Ming; Li, Sai

2009-05-01

A simple and inexpensive technique for the simultaneous fabrication of positive (i.e., protruding), very high aspect (>10) ratio nanostructures together with micro- or millistructures is developed. The method involves using residual patterns of thin-film over-etching (RPTO) to produce sub-micro-/nanoscale features. The residual thin-film nanopattern is used as an etching mask for Si deep reactive ion etching. The etched Si structures are further reduced in size by Si thermal oxidation to produce amorphous SiO(2), which is subsequently etched away by HF. Two arrays of positive Si nanowalls are demonstrated with this combined RPTO-SiO(2)-HF technique. One array has a feature size of 150 nm and an aspect ratio of 26.7 and another has a feature size of 50 nm and an aspect ratio of 15. No other parallel reduction technique can achieve such a very high aspect ratio for 50-nm-wide nanowalls. As a demonstration of the technique to simultaneously achieve nano- and milliscale features, a simple Si nanofluidic master mold with positive features with dimensions varying continuously from 1 mm to 200 nm and a highest aspect ratio of 6.75 is fabricated; the narrow 200-nm section is 4.5 mm long. This Si master mold is then used as a mold for UV embossing. The embossed open channels are then closed by a cover with glue bonding. A high aspect ratio is necessary to produce unblocked closed channels after the cover bonding process of the nanofluidic chip. The combined method of RPTO, Si thermal oxidation, and HF etching can be used to make complex nanofluidic systems and nano-/micro-/millistructures for diverse applications.

Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

NASA Astrophysics Data System (ADS)

Wolf, Steven; Edmonds, Mary; Sardashti, Kasra; Clemons, Max; Park, Jun Hong; Yoshida, Naomi; Dong, Lin; Nemani, Srinivas; Yieh, Ellie; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

2018-05-01

Low-temperature sequential exposures of N2H4 and BCl3 have been performed on Si0.3Ge0.7(001), Cu, and HOPG surfaces at 350 °C. A novel BN ALD process has been achieved on Si0.3Ge0.7(001) with 60 cycles of BN ALD producing a uniform, pinhole-free thin film with low contamination, as characterized with XPS and AFM. On Cu and Si0.3Ge0.7(001), XPS spectra indicated a near stoichiometric BN film. While AFM imaging indicated the deposition on Cu yielded nanometer-scale etching, conformal deposition was observed on Si0.3Ge0.7(001). The BN ALD also nucleated on inert HOPG via step edges. In situ STM imaging showed that cyclic exposures at 350 °C were able to decorate step edges with features ∼2 nm tall and ∼200 nm wide, indicating the propensity for BN to grow in the planar direction. The N2H4 and BCl3 ALD allows for the deposition of low oxygen, low carbon films, but to avoid etching, the growth should be nucleated by N2H4, since exposure to BCl3 can result in the formation of volatile Cl-containing surface species on many substrates. Therefore, the formation of a stable surface nitride prior to BCl3 exposure is necessary to prevent formation and desorption of volatile species from the substrate.

A plasmaless, photochemical etch process for porous organosilicate glass films

NASA Astrophysics Data System (ADS)

Ryan, E. Todd; Molis, Steven E.

2017-12-01

A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

PubMed Central

Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

2014-01-01

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

Correlation between oxidant concentrations, morphological aspects and etching kinetics of silicon nanowires during silver-assist electroless etching

NASA Astrophysics Data System (ADS)

Moumni, Besma; Jaballah, Abdelkader Ben

2017-12-01

Silicon porosification by silver assisted chemical etching (Ag-ACE) for a short range of H2O2 concentration is reported. We experimentally show that porous silicon (PSi) is obtained for 1% H2O2, whereas silicon nanowires (SiNWs) appeared by simply tuning the concentration of H2O2 to relatively high concentrations up to 8%. The morphological aspects are claimed by scanning electron microscopy proving that the kinetics of SiNWs formation display nonlinear relationships versus H2O2 concentration and etching time. A semi-qualitative electrochemical etching model based on local anodic, Ic, and cathodic, Ia, currents is proposed to explain the different morphological changes, and to unveil the formation pathways of both PS and SiNWs. More importantly, an efficient antireflective character for silicon solar cell (reflectance close to 2%) is realized at 8% H2O2. In addition, the luminescence of the prepared Si-nanostructures is claimed by photoluminescence which exhibit a large enhancement of the intensity and a blue shift for narrow and deep SiNWs.

Characteristics of pulsed dual frequency inductively coupled plasma

NASA Astrophysics Data System (ADS)

Seo, Jin Seok; Kim, Kyoung Nam; Kim, Ki Seok; Kim, Tae Hyung; Yeom, Geun Young

2015-01-01

To control the plasma characteristics more efficiently, a dual antenna inductively coupled plasma (DF-ICP) source composed of a 12-turn inner antenna operated at 2 MHz and a 3-turn outer antenna at 13.56 MHz was pulsed. The effects of pulsing to each antenna on the change of plasma characteristics and SiO2 etch characteristics using Ar/C4F8 gas mixtures were investigated. When the duty percentage was decreased from continuous wave (CW) mode to 30% for the inner or outer ICP antenna, decrease of the average electron temperature was observed for the pulsing of each antenna. Increase of the CF2/F ratio was also observed with decreasing duty percentage of each antenna, indicating decreased dissociation of the C4F8 gas due to the decreased average electron temperature. When SiO2 etching was investigated as a function of pulse duty percentage, increase of the etch selectivity of SiO2 over amorphous carbon layer (ACL) was observed while decreasing the SiO2 etch rate. The increase of etch selectivity was related to the change of gas dissociation characteristics, as observed by the decrease of average electron temperature and consequent increase of the CF2/F ratio. The decrease of the SiO2 etch rate could be compensated for by using the rf power compensated mode, that is, by maintaining the same time-average rf power during pulsing, instead of using the conventional pulsing mode. Through use of the power compensated mode, increased etch selectivity of SiO2/ACL similar to the conventional pulsing mode could be observed without significant decrease of the SiO2 etch rate. Finally, by using the rf power compensated mode while pulsing rf powers to both antennas, the plasma uniformity over the 300 mm diameter substrate could be improved from 7% for the CW conditions to about around 3.3% with the duty percentage of 30%.

Micromirror arrays to assess luminescent nano-objects.

PubMed

Kawakami, Yoichi; Kanai, Akinobu; Kaneta, Akio; Funato, Mitsuru; Kikuchi, Akihiko; Kishino, Katsumi

2011-05-01

We propose an array of submicrometer mirrors to assess luminescent nano-objects. Micromirror arrays (MMAs) are fabricated on Si (001) wafers via selectively doping Ga using the focused ion beam technique to form p-type etch stop regions, subsequent anisotropic chemical etching, and Al deposition. MMAs provide two benefits: reflection of luminescence from nano-objects within MMAs toward the Si (001) surface normal and nano-object labeling. The former increases the probability of optics collecting luminescence and is demonstrated by simulations based on the ray-tracing and finite-difference time-domain methods as well as by experiments. The latter enables different measurements to be repeatedly performed on a single nano-object located at a certain micromirror. For example, a single InGaN∕GaN nanocolumn is assessed by scanning electron microscopy and microphotoluminescence spectroscopy.

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

Surface Attachment of Gold Nanoparticles Guided by Block Copolymer Micellar Films and Its Application in Silicon Etching

PubMed Central

Wei, Mingjie; Wang, Yong

2015-01-01

Patterning metallic nanoparticles on substrate surfaces is important in a number of applications. However, it remains challenging to fabricate such patterned nanoparticles with easily controlled structural parameters, including particle sizes and densities, from simple methods. We report on a new route to directly pattern pre-formed gold nanoparticles with different diameters on block copolymer micellar monolayers coated on silicon substrates. Due to the synergetic effect of complexation and electrostatic interactions between the micellar cores and the gold particles, incubating the copolymer-coated silicon in a gold nanoparticles suspension leads to a monolayer of gold particles attached on the coated silicon. The intermediate micellar film was then removed using oxygen plasma treatment, allowing the direct contact of the gold particles with the Si substrate. We further demonstrate that the gold nanoparticles can serve as catalysts for the localized etching of the silicon substrate, resulting in nanoporous Si with a top layer of straight pores. PMID:28793407

Improvement in current density of nano- and micro-structured Si solar cells by cost-effective elastomeric stamp process

NASA Astrophysics Data System (ADS)

Jeon, Kiseok; Jee, Hongsub; Lim, Sangwoo; Park, Min Joon; Jeong, Chaehwan

2018-03-01

Effective incident light should be controlled for improving the current density of solar cells by employing nano- and micro-structures on silicon surface. The elastomeric stamp process, which is more cost effective and simpler than conventional photolithography, was proposed for the fabrication of nano- and micro-structures. Polydimethylsiloxane (PDMS) was poured on a mother pattern with a diameter of 6 μm and a spacing of 2 μm; then, curing was performed to create a PDMS mold. The regular micropattern was stamped on a low-viscosity resin-coated silicon surface, followed by the simple reactive ion etching process. Nano-structures were formed using the Ag-based electroless etching process. As etching time was increased to 6 min, reflectance decreased to 4.53% and current density improved from 22.35 to 34.72 mA/cm2.

Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

NASA Astrophysics Data System (ADS)

Miura, Yutaka; Kasahara, Yu; Habuka, Hitoshi; Takechi, Naoto; Fukae, Katsuya

2009-02-01

The etching rate behavior of silicon dioxide (SiO2, fused silica) using chlorine trifluoride (ClF3) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol-1, and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach.

PubMed

Ghoshal, Tandra; Holmes, Justin D; Morris, Michael A

2018-05-08

In an effort to develop block copolymer lithography to create high aspect vertical pore arrangements in a substrate surface we have used a microphase separated poly(ethylene oxide) -b- polystyrene (PEO-b-PS) block copolymer (BCP) thin film where (and most unusually) PS not PEO is the cylinder forming phase and PEO is the majority block. Compared to previous work, we can amplify etch contrast by inclusion of hard mask material into the matrix block allowing the cylinder polymer to be removed and the exposed substrate subject to deep etching thereby generating uniform, arranged, sub-25 nm cylindrical nanopore arrays. Briefly, selective metal ion inclusion into the PEO matrix and subsequent processing (etch/modification) was applied for creating iron oxide nanohole arrays. The oxide nanoholes (22 nm diameter) were cylindrical, uniform diameter and mimics the original BCP nanopatterns. The oxide nanohole network is demonstrated as a resistant mask to fabricate ultra dense, well ordered, good sidewall profile silicon nanopore arrays on substrate surface through the pattern transfer approach. The Si nanopores have uniform diameter and smooth sidewalls throughout their depth. The depth of the porous structure can be controlled via the etch process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saxena, Shailendra K., E-mail: phd1211512@iiti.ac.in; Sahu, Gayatri; Sagdeo, Pankaj R.

Quantum confinement effect has been studied in cheese like silicon nano-structures (Ch-SiNS) fabricated by metal induced chemical etching using different etching times. Scanning electron microscopy is used for the morphological study of these Ch-SiNS. A visible photoluminescence (PL) emission is observed from the samples under UV excitation at room temperature due to quantum confinement effect. The average size of Silicon Nanostructures (SiNS) present in the samples has been estimated by bond polarizability model using Raman Spectroscopy from the red-shift observed from SiNSs as compared to its bulk counterpart. The sizes of SiNS present in the samples decreases as etching timemore » increase from 45 to 75 mintunes.« less

Antireflective surface with a step in the taper: Numerical optimization and large-area fabrication

NASA Astrophysics Data System (ADS)

Shinotsuka, Kei; Hongo, Koki; Dai, Kotaro; Hirama, Satoru; Hatta, Yoshihisa

2017-02-01

In this study, we developed a practical method to improve the optical performance of subwavelength antireflective two-dimensional (2D) gratings. A numerical simulation of both convex and concave paraboloids suggested that surface reflectivity drastically decreases when a step is introduced in the taper. The optimum height and depth of a step provided average reflectances of 0.098% for convex protrusions and 0.040% for concave protrusions in the visible range. Furthermore, a stepped paraboloid was experimentally fabricated by dry etching of a Si substrate with SiO2 particle monolayer mask. A cyclo-olefin polymer (COP) reverse replica (concave) imprinted by the Si mold exhibited a measured reflectance of 0.077% on average in the visible range. It was also demonstrated that the antireflective structure was fabricated on the whole surface of a 6 in. Si wafer, which is a sufficient size for industrial utilization.

Selenidation of epitaxial silicene on ZrB2

NASA Astrophysics Data System (ADS)

Wiggers, F. B.; Yamada-Takamura, Y.; Kovalgin, A. Y.; de Jong, M. P.

2018-01-01

The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.

Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.

PubMed

Park, Sang Jae; Sadasivam, Karthikeyan Giri; Chung, Tae Hoon; Hong, Gi Cheol; Kim, Jin Bong; Kim, Sang Mook; Park, Si-Hyun; Jeon, Seong-Ran; Lee, June Key

2008-10-01

Improvement in light extraction efficiency of Ultra Violet-Light Emitting Diode (UV-LED) is achieved by nano-scale roughening of p-type Gallium Nitride (p-GaN) surface. The process of surface roughening is carried out by using self assembled gold (Au) nano-clusters with support of nano-size silicon-oxide (SiO2) pillars on p-GaN surface as a dry etching mask and by p-GaN regrowth in the regions not covered by the mask after dry etching. Au nano-clusters are formed by rapid thermal annealing (RTA) process carried out at 600 degrees C for 1 min using 15 nm thick Au layer on top of SiO2. The p-GaN roughness is controlled by p-GaN regrowth time. Four different time values of 15 sec, 30 sec, 60 sec and 120 sec are considered for p-GaN regrowth. Among the four different p-GaN regrowth time values 30 sec regrown p-GaN sample has the optimum roughness to increase the electroluminescence (EL) intensity to a value approximately 60% higher than the EL intensity of a conventional LED.

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

NASA Astrophysics Data System (ADS)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

[Construction of a multiple-scale implant surface with super-hydrophilicity].

PubMed

Luo, Qiao-jie; Li, Xiao-dong; Huang, Ying; Zhao, Shi-fang

2012-05-01

To construct a multiple-scale organized implant surface with super-hydrophilicity. The SiC paper polished titanium disc was sandblasted and treated with HF/HNO₃ and HCl/H₂SO₄, then acid-etched with H₂SO₄/H₂O₂. The physicochemical properties of the surfaces were characterized by scanning electron microscope, static state contact angle and X-ray diffraction. MC3T3-E1 cells were used to evaluate the effects of the surface on the cell adhesion, proliferation and differentiation. The acid-etching process with a mixture of H₂SO₄/H₂O₂ superimposed the nano-scale structure on the micro-scale texture. The multiple-scale implant surface promoted its hydrophilicity and was more favorable to the responses of osteoprogenitor cells, characterized by increased DNA content, enhanced ALP activity and promoted OC production. A multiple-scale implant surface with super-hydrophilicity has been constructed in this study, which facilitates cell proliferation and adhesion.

Ion beam texturing

NASA Technical Reports Server (NTRS)

Hudson, W. R.

1976-01-01

A microscopic surface texture is created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface. A xenon ion beam source has been used to perform this texturing process on samples as large as three centimeters in diameter. Ion beam textured surface structures have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, Stainless steel, Au, and Ag. Surfaces have been textured using a variety of low sputter yield materials - Ta, Mo, Nb, and Ti. The initial stages of the texture creation have been documented, and the technique of ion beam sputter removal of any remaining deposited material has been studied. A number of other texturing parameters have been studied such as the variation of the texture with ion beam power, surface temperature, and the rate of texture growth with sputter etching time.

Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shaoyuan; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093; Ma, Wenhui, E-mail: mwhsilicon@163.com

2014-05-01

In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWsmore » is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.« less

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

NASA Astrophysics Data System (ADS)

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

2015-03-01

Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

Evaluation of stress stabilities in amorphous In-Ga-Zn-O thin-film transistors: Effect of passivation with Si-based resin

NASA Astrophysics Data System (ADS)

Ochi, Mototaka; Hino, Aya; Goto, Hiroshi; Hayashi, Kazushi; Fujii, Mami N.; Uraoka, Yukiharu; Kugimiya, Toshihiro

2018-02-01

Fabrication process conditions of a passivation (PV) layer correlated with stress stabilities of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In etch-stop layer (ESL)-TFTs, by inserting a Si-based resin between SiN x and SiO x PV layers, the peak intensity in the photoinduced transient spectroscopy (PITS) spectrum was notably reduced. This suggested the suppression of hydrogen incorporation into a-IGZO, which led to the improvement of stability under negative bias thermal illumination stress (NBTIS). In contrast, the hydrogen-related defects in the a-IGZO were easily formed by the back-channel etch (BCE) process. Furthermore, it was found that, under NBTIS, the transfer curves of the BCE-TFTs shifted in parallel owing to the positive fixed charge located in the back channel of the a-IGZO TFTs. The hump-shaped shift increased with stress time. This is because hydrogen atoms located at the back-channel surfaces of the a-IGZO and/or PV layers were incorporated into the channel region of the BCE-TFTs and induced the hydrogen-related defects.

Making Porous Luminescent Regions In Silicon Wafers

NASA Technical Reports Server (NTRS)

Fathauer, Robert W.; Jones, Eric W.

1994-01-01

Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking

NASA Astrophysics Data System (ADS)

Isa, F.; Salvalaglio, M.; Arroyo Rojas Dasilva, Y.; Jung, A.; Isella, G.; Erni, R.; Timotijevic, B.; Niedermann, P.; Gröning, P.; Montalenti, F.; von Känel, H.

2016-10-01

We demonstrate that the elastic stress relaxation mechanism in micrometre-sized, highly mismatched heterostructures may be enhanced by employing patterned substrates in the form of necked pillars, resulting in a significant reduction of the dislocation density. Compositionally graded Si1-xGex crystals were grown by low energy plasma enhanced chemical vapour deposition, resulting in tens of micrometres tall, three-dimensional heterostructures. The patterned Si(001) substrates consist of micrometre-sized Si pillars either with the vertical {110} or isotropically under-etched sidewalls resulting in narrow necks. The structural properties of these heterostructures were investigated by defect etching and transmission electron microscopy. We show that the dislocation density, and hence the competition between elastic and plastic stress relaxation, is highly influenced by the shape of the substrate necks and their proximity to the mismatched epitaxial material. The SiGe dislocation density increases monotonically with the crystal width but is significantly reduced by the substrate under-etching. The drop in dislocation density is interpreted as a direct effect of the enhanced compliance of the under-etched Si pillars, as confirmed by the three-dimensional finite element method simulations of the elastic energy distribution.

Development of speckle-free channel-cut crystal optics using plasma chemical vaporization machining for coherent x-ray applications.

PubMed

Hirano, Takashi; Osaka, Taito; Sano, Yasuhisa; Inubushi, Yuichi; Matsuyama, Satoshi; Tono, Kensuke; Ishikawa, Tetsuya; Yabashi, Makina; Yamauchi, Kazuto

2016-06-01

We have developed a method of fabricating speckle-free channel-cut crystal optics with plasma chemical vaporization machining, an etching method using atmospheric-pressure plasma, for coherent X-ray applications. We investigated the etching characteristics to silicon crystals and achieved a small surface roughness of less than 1 nm rms at a removal depth of >10 μm, which satisfies the requirements for eliminating subsurface damage while suppressing diffuse scattering from rough surfaces. We applied this method for fabricating channel-cut Si(220) crystals for a hard X-ray split-and-delay optical system and confirmed that the crystals provided speckle-free reflection profiles under coherent X-ray illumination.

Reducing Line Edge Roughness in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications

NASA Astrophysics Data System (ADS)

Marchack, Nathan; Khater, Marwan; Orcutt, Jason; Chang, Josephine; Holmes, Steven; Barwicz, Tymon; Kamlapurkar, Swetha; Green, William; Engelmann, Sebastian

2017-03-01

The LER and LWR of subtractively patterned Si and SiN waveguides was calculated after each step in the process. It was found for Si waveguides that adjusting the ratio of CF4:CHF3 during the hard mask open step produced reductions in LER of 26 and 43% from the initial lithography for isolated waveguides patterned with partial and full etches, respectively. However for final LER values of 3.0 and 2.5 nm on fully etched Si waveguides, the corresponding optical loss measurements were indistinguishable. For SiN waveguides, introduction of C4H9F to the conventional CF4/CHF3 measurement was able to reduce the mask height budget by a factor of 5, while reducing LER from the initial lithography by 26%.

Switchable Super-Hydrophilic/Hydrophobic Indium Tin Oxide (ITO) Film Surfaces on Reactive Ion Etching (RIE) Textured Si Wafer.

PubMed

Kim, Hwa-Min; Litao, Yao; Kim, Bonghwan

2015-11-01

We have developed a surface texturing process for pyramidal surface features along with an indium tin oxide (ITO) coating process to fabricate super-hydrophilic conductive surfaces. The contact angle of a water droplet was less than 5 degrees, which means that an extremely high wettability is achievable on super-hydrophilic surfaces. We have also fabricated a super-hydrophobic conductive surface using an additional coating of polytetrafluoroethylene (PTFE) on the ITO layer coated on the textured Si surface; the ITO and PTFE films were deposited by using a conventional sputtering method. We found that a super-hydrophilic conductive surface is produced by ITO coated on the pyramidal Si surface (ITO/Si), with contact angles of approximately 0 degrees and a resistivity of 3 x 10(-4) Ω x cm. These values are highly dependent on the substrate temperature during the sputtering process. We also found that the super-hydrophobic conductive surface produced by the additional coating of PTFE on the pyramidal Si surface with an ITO layer (PTFE/ITO/Si) has a contact angle of almost 160 degrees and a resistivity of 3 x 10(-4) Ω x cm, with a reflectance lower than 9%. Therefore, these processes can be used to fabricate multifunctional features of ITO films for switchable super-hydrophilic and super-hydrophobic surfaces.

Ammonia sensing using arrays of silicon nanowires and graphene

NASA Astrophysics Data System (ADS)

Fobelets, K.; Panteli, C.; Sydoruk, O.; Li, Chuanbo

2018-06-01

Ammonia (NH3) is a toxic gas released in different industrial, agricultural and natural processes. It is also a biomarker for some diseases. These require NH3 sensors for health and safety reasons. To boost the sensitivity of solid-state sensors, the effective sensing area should be increased. Two methods are explored and compared using an evaporating pool of 0.5 mL NH4OH (28% NH3). In the first method an array of Si nanowires (Si NWA) is obtained via metal-assisted-electrochemical etching to increase the effective surface area. In the second method CVD graphene is suspended on top of the Si nanowires to act as a sensing layer. Both the effective surface area as well as the density of surface traps influences the amplitude of the response. The effective surface area of Si NWAs is 100 × larger than that of suspended graphene for the same top surface area, leading to a larger response in amplitude by a factor of ~7 notwithstanding a higher trap density in suspended graphene. The use of Si NWAs increases the response rate for both Si NWAs as well as the suspended graphene due to more effective NH3 diffusion processes.

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Correlation between surface properties and wettability of multi-scale structured biocompatible surfaces

NASA Astrophysics Data System (ADS)

Gorodzha, S. N.; Surmeneva, M. A.; Prymak, O.; Wittmar, A.; Ulbricht, M.; Epple, M.; Teresov, A.; Koval, N.; Surmenev, R. A.

2015-11-01

The influence of surface properties of radio-frequency (RF) magnetron deposited hydroxyapatite (HA) and Si-containing HA coatings on wettability was studied. The composition and morphology of the coatings fabricated on titanium (Ti) were characterized using atomic force microscopy (AFM) and X-ray diffraction (XRD). The surface wettability was studied using contact angle analysis. Different geometric parameters of acid-etched (AE) and pulse electron beam (PEB)-treated Ti substrates and silicate content in the HA films resulted in the different morphology of the coatings at micro- and nano- length scales. Water contact angles for the HA coated Ti samples were evaluated as a combined effect of micro roughness of the substrate and nano-roughness of the HA films resulting in higher water contact angles compared with acid-etched (AE) or pulse electron beam (PEB) treated Ti substrates.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

PubMed Central

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-01-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10–40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors.

PubMed

Oakes, Landon; Westover, Andrew; Mares, Jeremy W; Chatterjee, Shahana; Erwin, William R; Bardhan, Rizia; Weiss, Sharon M; Pint, Cary L

2013-10-22

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-10-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Tunneling Spectroscopy of Chemically Treated Surfaces of GaAs(001)

NASA Astrophysics Data System (ADS)

Fan, Jia-Fa; Tokumoto, Hiroshi

1996-03-01

Effect of surface chemical treatment on the surface electronic properties of GaAs(001) was studied by tunneling spectroscopy. Samples of highly-Si-doped GaAs were first cleaned and etched using conventional processes, then soaked in aqueous solutions of (NH_4)_2Sx and/or NH_4F for few hours, and finally rinsed in ethanol. The constant separation spectroscopy was done under pure N2 ambient at room temperature (295K) with our scanning tunneling microscope (STM). As a result, the sulfide treament lead to electron tunnelings starting typically at the sample voltages of -0.50 V and 0.90 V at initial settings of 1.50 V and 0.20 nA. For etched-only surface, however, the starting voltages were -0.70 V and 0.70 V. Effects of heating, laser-irradiation, and the fluoride treatment will be presented. Also, the mechanism of the shift of the surface Fermi level will be discussed.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

Fabrication of vertical nanowire resonators for aerosol exposure assessment

NASA Astrophysics Data System (ADS)

Merzsch, Stephan; Wasisto, Hutomo Suryo; Stranz, Andrej; Hinze, Peter; Weimann, Thomas; Peiner, Erwin; Waag, Andreas

2013-05-01

Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosol nanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ion etching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspect ratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact mode to serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to 5 μm). In dry etching process, the etch rate is set high of 1.5 μm/min to avoid underetching. The etch profiles of Si wires can be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting the etching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificial thermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 μm in length. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanning electron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from the topside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 μm during its resonant frequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of a portable aerosol resonant sensor.

Realization of 13.6% Efficiency on 20 μm Thick Si/Organic Hybrid Heterojunction Solar Cells via Advanced Nanotexturing and Surface Recombination Suppression.

PubMed

He, Jian; Gao, Pingqi; Liao, Mingdun; Yang, Xi; Ying, Zhiqin; Zhou, Suqiong; Ye, Jichun; Cui, Yi

2015-06-23

Hybrid silicon/polymer solar cells promise to be an economically feasible alternative energy solution for various applications if ultrathin flexible crystalline silicon (c-Si) substrates are used. However, utilization of ultrathin c-Si encounters problems in light harvesting and electronic losses at surfaces, which severely degrade the performance of solar cells. Here, we developed a metal-assisted chemical etching method to deliver front-side surface texturing of hierarchically bowl-like nanopores on 20 μm c-Si, enabling an omnidirectional light harvesting over the entire solar spectrum as well as an enlarged contact area with the polymer. In addition, a back surface field was introduced on the back side of the thin c-Si to minimize the series resistance losses as well as to suppress the surface recombination by the built high-low junction. Through these improvements, a power conversion efficiency (PCE) up to 13.6% was achieved under an air mass 1.5 G irradiation for silicon/organic hybrid solar cells with the c-Si thickness of only about 20 μm. This PCE is as high as the record currently reported in hybrid solar cells constructed from bulk c-Si, suggesting a design rule for efficient silicon/organic solar cells with thinner absorbers.

Farbrication of diffractive optical elements on a Si chip by an imprint lithography using nonsymmetrical silicon mold

NASA Astrophysics Data System (ADS)

Hirai, Yoshihiko; Okano, Masato; Okuno, Takayuki; Toyota, Hiroshi; Yotsuya, Tsutomu; Kikuta, Hisao; Tanaka, Yoshio

2001-11-01

Fabrication of a fine diffractive optical element on a Si chip is demonstrated using imprint lithography. A chirped diffraction grating, which has modulated pitched pattern with curved cross section is fabricated by an electron beam lithography, where the exposure dose profile is automatically optimized by computer aided system. Using the resist pattern as an etching mask, anisotropic dry etching is performed to transfer the resist pattern profile to the Si chip. The etched Si substrate is used as a mold in the imprint lithography. The Si mold is pressed to a thin polymer (poly methyl methacrylate) on a Si chip. After releasing the mold, a fine diffractive optical pattern is successfully transferred to the thin polymer. This method is exceedingly useful for fabrication of integrated diffractive optical elements with electric circuits on a Si chip.

Hydrogen passivation of silicon(100) used as templates for low-temperature epitaxy and oxidation

NASA Astrophysics Data System (ADS)

Atluri, Vasudeva Prasad

Epitaxial growth, oxidation and ohmic contacts require surfaces as free as possible of physical defects and chemical contaminants, especially, oxygen and hydrocarbons. Wet chemical cleaning typically involves a RCA clean to remove contaminants by stripping the native oxide and regrowing a chemical oxide with only trace levels of carbon and metallic impurities. Low temperature epitaxy, T<800sp° C, limits the thermal budget for the desorption of impurities and surface oxides, and can be performed on processed structures. But, silicon dioxide cannot be desorbed at temperatures lower than 800sp°C. Recently, hydrogen passivation of Si(111) has been reported to produce stable and ordered surfaces at low temperatures. Hydrogen can then be desorbed between 200sp°C and 600sp°C prior to deposition. In this work, Si(100) is passivated via a solution of hydrofluoric acid in alcohol (methanol, ethanol, or isopropyl alcohol) with HF concentrations between 0.5 to 10%. A rinse in water or alcohol is performed after etching to remove excess fluorine. This work investigates wet chemical cleaning of Si(100) to produce ordered, hydrogen-terminated, oxygen- and carbon-free surfaces to be used as templates for low temperature epitaxial growth and rapid thermal oxidation. Ion beam analysis, Tapping mode atomic force microscopy, Fourier transform infrared spectroscopy, Secondary ion mass spectroscopy, Chemical etching, Capacitance-voltage measurements and Ellipsometry are used to measure, at the surface and interface, impurities concentration, residual disorder, crystalline order, surface topography, roughness, chemical composition, defects density, electrical characteristics, thickness, and refractive index as a function of cleaning conditions for homoepitaxial silicon growth and oxidation. The wetting characteristics of the Si(100) surfaces are measured with a tilting plate technique. Different materials are analyzed by ion beam analysis for use as hydrogen standards in elastic recoil detection of hydrogen on sample surfaces. The results obtained in this study provide a quantitative optimization of passivation of Si(100) surfaces and their use as templates for low temperature epitaxy and rapid thermal oxidation. Ion beam analysis shows that the total coverage of H increases during passivation of Si(100) via HF in alcohol, while Fourier transform infrared spectroscopy indicates that more complex termination than the formation of simple silicon hydrides occurs.

Polarized luminescence of nc-Si-SiO x nanostructures on silicon substrates with patterned surface

NASA Astrophysics Data System (ADS)

Michailovska, Katerina; Mynko, Viktor; Indutnyi, Ivan; Shepeliavyi, Petro

2018-05-01

Polarization characteristics and spectra of photoluminescence (PL) of nc-Si-SiO x structures formed on the patterned and plane c-Si substrates are studied. The interference lithography with vacuum chalcogenide photoresist and anisotropic wet etching are used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si-SiO x structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. The linear polarization memory (PM) effect in PL of studied structure on plane substrate is manifested only after the treatment of the structures in HF and is explained by the presence of elongated Si nanoparticles in the SiO x nanocolumns. But the PL output from the nc-Si-SiO x structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on the polarization of the exciting light. The measured reflection spectra of nc-Si-SiO x structure on the patterned c-Si substrate confirmed the influence of pattern on the extraction of polarized PL.

Technique for etching monolayer and multilayer materials

DOEpatents

Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

2015-10-06

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Fabrication Methods for Adaptive Deformable Mirrors

NASA Technical Reports Server (NTRS)

Toda, Risaku; White, Victor E.; Manohara, Harish; Patterson, Keith D.; Yamamoto, Namiko; Gdoutos, Eleftherios; Steeves, John B.; Daraio, Chiara; Pellegrino, Sergio

2013-01-01

Previously, it was difficult to fabricate deformable mirrors made by piezoelectric actuators. This is because numerous actuators need to be precisely assembled to control the surface shape of the mirror. Two approaches have been developed. Both approaches begin by depositing a stack of piezoelectric films and electrodes over a silicon wafer substrate. In the first approach, the silicon wafer is removed initially by plasmabased reactive ion etching (RIE), and non-plasma dry etching with xenon difluoride (XeF2). In the second approach, the actuator film stack is immersed in a liquid such as deionized water. The adhesion between the actuator film stack and the substrate is relatively weak. Simply by seeping liquid between the film and the substrate, the actuator film stack is gently released from the substrate. The deformable mirror contains multiple piezoelectric membrane layers as well as multiple electrode layers (some are patterned and some are unpatterned). At the piezolectric layer, polyvinylidene fluoride (PVDF), or its co-polymer, poly(vinylidene fluoride trifluoroethylene P(VDF-TrFE) is used. The surface of the mirror is coated with a reflective coating. The actuator film stack is fabricated on silicon, or silicon on insulator (SOI) substrate, by repeatedly spin-coating the PVDF or P(VDFTrFE) solution and patterned metal (electrode) deposition. In the first approach, the actuator film stack is prepared on SOI substrate. Then, the thick silicon (typically 500-micron thick and called handle silicon) of the SOI wafer is etched by a deep reactive ion etching process tool (SF6-based plasma etching). This deep RIE stops at the middle SiO2 layer. The middle SiO2 layer is etched by either HF-based wet etching or dry plasma etch. The thin silicon layer (generally called a device layer) of SOI is removed by XeF2 dry etch. This XeF2 etch is very gentle and extremely selective, so the released mirror membrane is not damaged. It is possible to replace SOI with silicon substrate, but this will require tighter DRIE process control as well as generally longer and less efficient XeF2 etch. In the second approach, the actuator film stack is first constructed on a silicon wafer. It helps to use a polyimide intermediate layer such as Kapton because the adhesion between the polyimide and silicon is generally weak. A mirror mount ring is attached by using adhesive. Then, the assembly is partially submerged in liquid water. The water tends to seep between the actuator film stack and silicon substrate. As a result, the actuator membrane can be gently released from the silicon substrate. The actuator membrane is very flat because it is fixed to the mirror mount prior to the release. Deformable mirrors require extremely good surface optical quality. In the technology described here, the deformable mirror is fabricated on pristine substrates such as prime-grade silicon wafers. The deformable mirror is released by selectively removing the substrate. Therefore, the released deformable mirror surface replicates the optical quality of the underlying pristine substrate.

Effect of a Cooling Step Treatment on a High-Voltage GaN LED During ICP Dry Etching

NASA Astrophysics Data System (ADS)

Lin, Yen-Sheng; Hsiao, Sheng-Yu; Tseng, Chun-Lung; Shen, Ching-Hsing; Chiang, Jung-Sheng

2017-02-01

In this study, a lower dislocation density for a GaN surface and a reduced current path are observed at the interface of a SiO2 isolation sidewall, using high-resolution transmission electron microscopy. This is grown using a 3-min cooling step treatment during inductivity coupled plasma dry etching. The lower forward voltage is measured, the leakage current decreases from 53nA to 32nA, and the maximum output power increases from 354.8 W to 357.2 W for an input current of 30 mA. The microstructure and the optoelectronic properties of high-voltage light-emitting-diodes is proven to be affected by the cooling step treatment, which allows enough time to release the thermal energy of the SiO2 isolation well.

Sum frequency generation spectroscopy study of hydrogenated stepped Si(111) surfaces made by molecular hydrogen exposure

NASA Astrophysics Data System (ADS)

Hien, K. T. T.; Sattar, M. A.; Miyauchi, Y.; Mizutani, G.; Rutt, H. N.

2017-09-01

Hydrogen adsorption on stepped Si(111) surfaces 9.5° miscut in the [ 1 ̅ 1 ̅ 2 ] direction has been investigated in situ in a UHV chamber with a base pressure of 10-8 Pa. The H-Si(111)1×1 surface was prepared by exposing the wafer to ultra-pure hydrogen gas at a pressure of 470 Pa. Termination of hydrogen on terraces and steps was observed by sum frequency generation (SFG) with several polarization combinations such as ppp, ssp, pps, spp, psp, sps, pss and sss. Here the 1st, 2nd and 3rd symbols indicate SFG, visible and IR polarizations, respectively. ppp and ssp-SFG clearly showed only two modes: the Si-H stretching vibration terrace mode at 2082 cm-1 (A) and the vertical step dihydride vibration mode at 2094 cm-1 (C1). Interesting points are the appearance of the C1 mode in contrast to the previous SFG spectrum of the H-Si(111)1×1 surface with the same miscut surface angle prepared by wet chemical etching. We suggest that the formation of step dihydride and its orientation on the Si(111) stepped surfaces depend strongly on the preparation method.

Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hübner, M.; Lang, N.; Röpcke, J.

2015-01-19

Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines andmore » determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.« less

Birefringence and anisotropic optical absorption in porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Efimova, A. I., E-mail: efimova@vega.phys.msu.ru; Krutkova, E. Yu.; Golovan', L. A.

2007-10-15

The refractive indices and the coefficients of optical absorption by free charge carriers and local vibrations in porous silicon (por-Si) films, comprising nanometer-sized silicon residues (nanocrystals) separated by nanometer-sized pores (nanopores) formed in the course of electrochemical etching of the initial single crystal silicon, have been studied by polarization-resolved IR absorption spectroscopy techniques. It is shown that the birefringence observed in por-Si is related to the anisotropic shapes of nanocrystals and nanopores, while the anisotropy (dichroism) of absorption by the local vibrational modes is determined predominantly by the microrelief of the surface of nanocrystals. It is demonstrated that silicon-hydrogen surfacemore » bonds in nanocrystals can be restored by means of selective hydrogen thermodesorption with the formation of a considerable number of H-terminated surface Si-Si dimers.« less

Plasma etched surface scanning inspection recipe creation based on bidirectional reflectance distribution function and polystyrene latex spheres

NASA Astrophysics Data System (ADS)

Saldana, Tiffany; McGarvey, Steve; Ayres, Steve

2014-04-01

The continual increasing demands upon Plasma Etching systems to self-clean and continue Plasma Etching with minimal downtime allows for the examination of SiCN, SiO2 and SiN defectivity based upon Surface Scanning Inspection Systems (SSIS) wafer scan results. Historically all Surface Scanning Inspection System wafer scanning recipes have been based upon Polystyrene Spheres wafer deposition for each film stack and the subsequent creation of light scattering sizing response curves. This paper explores the feasibility of the elimination of Polystyrene Latex Sphere (PSL) and/or process particle deposition on both filmed and bare Silicon wafers prior to Surface Scanning Inspection System recipe creation. The study will explore the theoretical maximal Surface Scanning Inspection System sensitivity based on PSL recipe creation in conjunction with the maximal sensitivity derived from Bidirectional Reflectance Distribution Function (BRDF) maximal sensitivity modeling recipe creation. The surface roughness (Root Mean Square) of plasma etched wafers varies dependent upon the process film stack. Decrease of the root mean square value of the wafer sample surface equates to higher surface scanning inspection system sensitivity. Maximal sensitivity SSIS scan results from bare and filmed wafers inspected with recipes created based upon Polystyrene/Particle Deposition and recipes created based upon BRDF modeling will be overlaid against each other to determine maximal sensitivity and capture rate for each type of recipe that was created with differing recipe creation modes. A statistically valid sample of defects from each Surface Scanning Inspection system recipe creation mode and each bare wafer/filmed substrate will be reviewed post SSIS System processing on a Defect Review Scanning Electron Microscope (DRSEM). Native defects, Polystyrene Latex Spheres will be collected from each statistically valid defect bin category/size. The data collected from the DRSEM will be utilized to determine the maximum sensitivity capture rate for each recipe creation mode. Emphasis will be placed upon the sizing accuracy of PSL versus BRDF modeling results based upon automated DRSEM defect sizing. An examination the scattering response for both Mie and Rayleigh will be explored in relationship to the reported sizing variance of the SSIS to make a determination of the absolute sizing accuracy of the recipes there were generated based upon BRDF modeling. This paper explores both the commercial and technical considerations of the elimination of PSL deposition as a precursor to SSIS recipe creation. Successful integration of BRDF modeling into the technical aspect of SSIS recipe creation process has the potential to dramatically reduce the recipe creation timeline and vetting period. Integration of BRDF modeling has the potential to greatly reduce the overhead operation costs for High Volume Manufacturing sites by eliminating the associated costs of third party PSL deposition.

Implantation of Fe3O4 Nanoparticles in Shells of Au@m-SiO2 Yolk@Shell Nanocatalysts with Both Improved Recyclability and Catalytic Activity.

PubMed

Li, Yanan; Jin, Chenjing; Yuan, Ganyin; Han, Jie; Wang, Minggui; Guo, Rong

2017-08-01

Multifunctional nanocatalysts of Au@Fe 3 O 4 /m-SiO 2 yolk@shell hybrids had been developed through a template-assisted synthesis, where Fe 3 O 4 nanoparticles (∼12 nm) and m-SiO 2 shells were sequentially assembled on surfaces of Au/SiO 2 core/shell templates, followed by selective etching of the inner SiO 2 cores, leading to the formation of Au@Fe 3 O 4 /m-SiO 2 yolk@shell hybrids. The Fe 3 O 4 nanoparticles were implanted in the inner surfaces of m-SiO 2 shells with partially exposed surfaces to the inner cavity. The novel design not only ensures a high surface area (540.0 m 2 /g) and saturation magnetization (48.6 emu/g) of the hybrids but also enables interaction between Au and Fe 3 O 4 nanoparticles. Catalytic tests toward the reduction of 4-nitrophenol in the presence of NaBH 4 indicated that Au@Fe 3 O 4 /m-SiO 2 yolk@shell nanocatalysts not only showed high stability and recyclability but also maintained improved catalytic activity as a result of the synergetic effect resulting from Au and Fe 3 O 4 interactions.

Long-lasting hydrophilicity on nanostructured Si-incorporated diamond-like carbon films.

PubMed

Yi, Jin Woo; Moon, Myoung-Woon; Ahmed, Sk Faruque; Kim, Haeri; Cha, Tae-Gon; Kim, Ho-Young; Kim, Seock-Sam; Lee, Kwang-Ryeol

2010-11-16

We investigated the long-lasting hydrophilic behavior of a Si-incorporated diamond-like carbon (Si-DLC) film by varying the Si fraction in DLC matrix through oxygen and nitrogen plasma surface treatments. The wetting behavior of the water droplets on the pure DLC and Si-DLC with the nitrogen or oxygen plasma treatment revealed that the Si element in the oxygen-plasma-treated Si-DLC films played a major role in maintaining a hydrophilic wetting angle of <10° for 20 days in ambient air. The nanostructured patterns with a roughness of ∼10 nm evolved because of the selective etching of the carbon matrix by the oxygen plasma in the Si-DLC film, where the chemical component of the Si-Ox bond was enriched on the top of the nanopatterns and remained for over 20 days.

Versatile control of metal-assisted chemical etching for vertical silicon microwire arrays and their photovoltaic applications

PubMed Central

Um, Han-Don; Kim, Namwoo; Lee, Kangmin; Hwang, Inchan; Hoon Seo, Ji; Yu, Young J.; Duane, Peter; Wober, Munib; Seo, Kwanyong

2015-01-01

A systematic study was conducted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arrays, with several models being studied for the efficient redox reaction of reactants with silicon through a metal catalyst by varying such parameters as the thickness and morphology of the metal film. By optimizing the MacEtch conditions, high-quality vertical Si microwires were successfully fabricated with lengths of up to 23.2 μm, which, when applied in a solar cell, achieved a conversion efficiency of up to 13.0%. These solar cells also exhibited an open-circuit voltage of 547.7 mV, a short-circuit current density of 33.2 mA/cm2, and a fill factor of 71.3% by virtue of the enhanced light absorption and effective carrier collection provided by the Si microwires. The use of MacEtch to fabricate high-quality Si microwires therefore presents a unique opportunity to develop cost-effective and highly efficient solar cells. PMID:26060095

Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

NASA Astrophysics Data System (ADS)

Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

2016-01-01

Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

Grafted Polystyrene Monolayer Brush as Both Negative and Positive Tone Electron Beam Resist.

PubMed

Aydinoglu, Ferhat; Yamada, Hirotaka; Dey, Ripon K; Cui, Bo

2017-05-23

Although spin coating is the most widely used electron-beam resist coating technique in nanolithography, it cannot typically be applied for nonflat or irregular surfaces. Here, we demonstrate that monolayer polystyrene brush can be grafted on substrates and used as both positive and negative electron-beam resist, which can be applied for such unconventional surfaces. Polystyrene is a popular negative resist when using solvent developer but solvent cannot be used for grafted polystyrene brush that is firmly bonded to the substrate. Instead, we employed two unconventional development methods to lead polystyrene brush to positive or negative tone behavior. Negative tone was achieved by thermal development at 300 °C because exposed thus cross-linked polystyrene brush is more thermally stable against vaporization than unexposed linear one. Surprisingly, positive tone behavior occurred when the brush was grafted onto an aluminum (Al) layer and the film stack was developed using diluted hydrofluoric acid (HF) that etched the underlying Al layer. By transferring the patterns into the silicon (Si) substrates using the thin Al layer as a sacrificial hard mask for dry etch, well-defined structures in Si were obtained in two different electron-beam resist tones as well as in nonflat surfaces.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

A Macroporous TiO2 Oxygen Sensor Fabricated Using Anodic Aluminium Oxide as an Etching Mask

PubMed Central

Lu, Chih-Cheng; Huang, Yong-Sheng; Huang, Jun-Wei; Chang, Chien-Kuo; Wu, Sheng-Po

2010-01-01

An innovative fabrication method to produce a macroporous Si surface by employing an anodic aluminium oxide (AAO) nanopore array layer as an etching template is presented. Combining AAO with a reactive ion etching (RIE) processes, a homogeneous and macroporous silicon surface can be effectively configured by modulating AAO process parameters and alumina film thickness, thus hopefully replacing conventional photolithography and electrochemical etch methods. The hybrid process integration is considered fully CMOS compatible thanks to the low-temperature AAO and CMOS processes. The gas-sensing characteristics of 50 nm TiO2 nanofilms deposited on the macroporous surface are compared with those of conventional plain (or non-porous) nanofilms to verify reduced response noise and improved sensitivity as a result of their macroporosity. Our experimental results reveal that macroporous geometry of the TiO2 chemoresistive gas sensor demonstrates 2-fold higher (∼33%) improved sensitivity than a non-porous sensor at different levels of oxygen exposure. In addition, the macroporous device exhibits excellent discrimination capability and significantly lessened response noise at 500 °C. Experimental results indicate that the hybrid process of such miniature and macroporous devices are compatible as well as applicable to integrated next generation bio-chemical sensors. PMID:22315561

Simple fabrication of antireflective silicon subwavelength structure with self-cleaning properties.

PubMed

Kim, Bo-Soon; Ju, Won-Ki; Lee, Min-Woo; Lee, Cheon; Lee, Seung-Gol; Beom-Hoan, O

2013-05-01

A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal annealing of a thin metallic film enables the creation of metal nano particles by isolating them from each other by means of the self-aggregation of the metal. After annealing, the samples were soaked in an aqueous etching solution of hydrofluoric acid and hydrogen peroxide. When silicon (Si) was etched for 2 minutes using the Au nano particles, the reflectance was decreased almost 0% over the entire wavelength range from 300 to 1300 nm due to its deep and steeply double tapered structure. When given varying incident angle degrees from 30 degrees to 60 degrees, the reflectance was also maintained at less than 3%. Following this, the etched silicon was treated with a plasma-polymerized fluorocarbon (PPFC) film of about 5 nm using an ICP reactor for surface modification. The result of this surface treatment, the contact angle increased significantly from 27.5 degrees to 139.3 degrees. The surface modification was successful and maintained almost 0% reflectance because of the thin film deposition.

A macroporous TiO2 oxygen sensor fabricated using anodic aluminium oxide as an etching mask.

PubMed

Lu, Chih-Cheng; Huang, Yong-Sheng; Huang, Jun-Wei; Chang, Chien-Kuo; Wu, Sheng-Po

2010-01-01

An innovative fabrication method to produce a macroporous Si surface by employing an anodic aluminium oxide (AAO) nanopore array layer as an etching template is presented. Combining AAO with a reactive ion etching (RIE) processes, a homogeneous and macroporous silicon surface can be effectively configured by modulating AAO process parameters and alumina film thickness, thus hopefully replacing conventional photolithography and electrochemical etch methods. The hybrid process integration is considered fully CMOS compatible thanks to the low-temperature AAO and CMOS processes. The gas-sensing characteristics of 50 nm TiO(2) nanofilms deposited on the macroporous surface are compared with those of conventional plain (or non-porous) nanofilms to verify reduced response noise and improved sensitivity as a result of their macroporosity. Our experimental results reveal that macroporous geometry of the TiO(2) chemoresistive gas sensor demonstrates 2-fold higher (∼33%) improved sensitivity than a non-porous sensor at different levels of oxygen exposure. In addition, the macroporous device exhibits excellent discrimination capability and significantly lessened response noise at 500 °C. Experimental results indicate that the hybrid process of such miniature and macroporous devices are compatible as well as applicable to integrated next generation bio-chemical sensors.

Facile synthesis of silicon nanowire-nanopillar superhydrophobic structures

NASA Astrophysics Data System (ADS)

Roy, Abhijit; Satpati, Biswarup

2018-04-01

We have used metal assisted chemical etching (MACE) method to produce silicon (Si) nanowire-nanopillar array. Nanowire-nanopillar combined structures show higher degree of hydrophobicity compared to its nanowire (Si-NW) counterparts. The rate of etching is depended on initial metal deposition. The structural analysis was carried out using scanning electron microscopy (SEM) in combination with transmission electron microscopy (TEM) to determine different parameters like etching direction, crystallinity etc.

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

PubMed

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Sean W., E-mail: sean.king@intel.com; Davis, Robert F.; Carter, Richard J.

The desorption kinetics of molecular hydrogen (H{sub 2}) from silicon (001) surfaces exposed to aqueous hydrogen fluoride and remote hydrogen plasmas were examined using temperature programmed desorption. Multiple H{sub 2} desorption states were observed and attributed to surface monohydride (SiH), di/trihydride (SiH{sub 2/3}), and hydroxide (SiOH) species, subsurface hydrogen trapped at defects, and hydrogen evolved during the desorption of surface oxides. The observed surface hydride species were dependent on the surface temperature during hydrogen plasma exposure with mono, di, and trihydride species being observed after low temperature exposure (150 °C), while predominantly monohydride species were observed after higher temperature exposure (450 °C).more » The ratio of surface versus subsurface H{sub 2} desorption was also found to be dependent on the substrate temperature with 150 °C remote hydrogen plasma exposure generally leading to more H{sub 2} evolved from subsurface states and 450 °C exposure leading to more H{sub 2} desorption from surface SiH{sub x} species. Additional surface desorption states were observed, which were attributed to H{sub 2} desorption from Si (111) facets formed as a result of surface etching by the remote hydrogen plasma or aqueous hydrogen fluoride treatment. The kinetics of surface H{sub 2} desorption were found to be in excellent agreement with prior investigations of silicon surfaces exposed to thermally generated atomic hydrogen.« less

A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

NASA Astrophysics Data System (ADS)

Roozeboom, F.; Kniknie, B.; Lankhorst, A. M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.; Dingemans, G.; Keuning, W.; Kessels, W. M. M.

2012-12-01

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatially-divided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing 'curtains' of heights down to ~20 μm. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C4F8 passivation steps by ALD-based oxide (e.g. SiO2) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.

PubMed

Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Unalan, Husnu Emrah

2011-04-15

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

NASA Astrophysics Data System (ADS)

Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Emrah Unalan, Husnu

2011-04-01

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

Direct Fabrication of Monodisperse Silica Nanorings from Hollow Spheres - A Template for Core-Shell Nanorings.

PubMed

Zhong, Kuo; Li, Jiaqi; Liu, Liwang; Brullot, Ward; Bloemen, Maarten; Volodin, Alexander; Song, Kai; Van Dorpe, Pol; Verellen, Niels; Clays, Koen

2016-04-27

We report a new type of nanosphere colloidal lithography to directly fabricate monodisperse silica (SiO2) nanorings by means of reactive ion etching of hollow SiO2 spheres. Detailed TEM, SEM, and AFM structural analysis is complemented by a model describing the geometrical transition from hollow sphere to ring during the etching process. The resulting silica nanorings can be readily redispersed in solution and subsequently serve as universal templates for the synthesis of ring-shaped core-shell nanostructures. As an example we used silica nanorings (with diameter of ∼200 nm) to create a novel plasmonic nanoparticle topology, a silica-Au core-shell nanoring, by self-assembly of Au nanoparticles (<20 nm) on the ring's surface. Spectroscopic measurements and finite difference time domain simulations reveal high quality factor multipolar and antibonding surface plasmon resonances in the near-infrared. By loading different types of nanoparticles on the silica core, hybrid and multifunctional composite nanoring structures could be realized for applications such as MRI contrast enhancement, catalysis, drug delivery, plasmonic and magnetic hyperthermia, photoacoustic imaging, and biochemical sensing.

Device properties of nanopore PN junction Si for photovoltaic application

NASA Astrophysics Data System (ADS)

Jin, Hyunjong; Chang, Te Wei; Liu, Logan Gang

2011-09-01

Improvement of energy conversion efficiency of solar cells has led to innovative approaches, in particular the introduction of nanopillar photovoltaics [1]. Previous work on nanopillar Si photovoltaic has shown broadband reduction in optical reflection and enhancement of absorption [2]. Radial or axial PN junctions [3, 4] have been of high interest for improved photovoltaic devices. However, with the PN junction incorporated as part of the pillar, the discreteness of individual pillar requires additional conductive layer that would electrically short the top of each pillar for efficient carrier extraction. The fragile structure of the surface pillars would also require a protection layer for possible mechanical scratch to prevent pillars from breaking. Any additional layer that is applied, either for electrical contact or for mechanical properties may introduce additional recombination sites and also reduce the actual light absorption by the photovoltaic material. In this paper, nanopore Si photovoltaics that not only provides the advantages but also addresses the challenges of nanopillers is demonstrated. PN junction substrate of 250 nm thick N-type polycrystalline Si on P-type Si wafer is prepared. The nanopore structure is formed by using anodized aluminum oxide (AAO) as an etching mask against deep reactive ionic etching (DRIE). The device consists of semi-ordered pores of ~70 nm diameter.

Fabrication and gas sensing properties of vertically aligned Si nanowires

NASA Astrophysics Data System (ADS)

Mirzaei, Ali; Kang, Sung Yong; Choi, Sun-Woo; Kwon, Yong Jung; Choi, Myung Sik; Bang, Jae Hoon; Kim, Sang Sub; Kim, Hyoun Woo

2018-01-01

In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H2O2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top-top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (Rg/Ra = 11.5 ∼ 17.1) to H2 gas (10-50 ppm) at 100 °C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top-top electrode structure that are fully compatible with well-developed Si technologies.

Fabrication of plasmonic cavity arrays for SERS analysis

NASA Astrophysics Data System (ADS)

Li, Ning; Feng, Lei; Teng, Fei; Lu, Nan

2017-05-01

The plasmonic cavity arrays are ideal substrates for surface enhanced Raman scattering analysis because they can provide hot spots with large volume for analyte molecules. The large area increases the probability to make more analyte molecules on hot spots and leads to a high reproducibility. Therefore, to develop a simple method for creating cavity arrays is important. Herein, we demonstrate how to fabricate a V and W shape cavity arrays by a simple method based on self-assembly. Briefly, the V and W shape cavity arrays are respectively fabricated by taking KOH etching on a nanohole and a nanoring array patterned silicon (Si) slides. The nanohole array is generated by taking a reactive ion etching on a Si slide assembled with monolayer of polystyrene (PS) spheres. The nanoring array is generated by taking a reactive ion etching on a Si slide covered with a monolayer of octadecyltrichlorosilane before self-assembling PS spheres. Both plasmonic V and W cavity arrays can provide large hot area, which increases the probability for analyte molecules to deposit on the hot spots. Taking 4-Mercaptopyridine as analyte probe, the enhancement factor can reach 2.99 × 105 and 9.97 × 105 for plasmonic V cavity and W cavity array, respectively. The relative standard deviations of the plasmonic V and W cavity arrays are 6.5% and 10.2% respectively according to the spectra collected on 20 random spots.

Fabrication of plasmonic cavity arrays for SERS analysis.

PubMed

Li, Ning; Feng, Lei; Teng, Fei; Lu, Nan

2017-05-05

The plasmonic cavity arrays are ideal substrates for surface enhanced Raman scattering analysis because they can provide hot spots with large volume for analyte molecules. The large area increases the probability to make more analyte molecules on hot spots and leads to a high reproducibility. Therefore, to develop a simple method for creating cavity arrays is important. Herein, we demonstrate how to fabricate a V and W shape cavity arrays by a simple method based on self-assembly. Briefly, the V and W shape cavity arrays are respectively fabricated by taking KOH etching on a nanohole and a nanoring array patterned silicon (Si) slides. The nanohole array is generated by taking a reactive ion etching on a Si slide assembled with monolayer of polystyrene (PS) spheres. The nanoring array is generated by taking a reactive ion etching on a Si slide covered with a monolayer of octadecyltrichlorosilane before self-assembling PS spheres. Both plasmonic V and W cavity arrays can provide large hot area, which increases the probability for analyte molecules to deposit on the hot spots. Taking 4-Mercaptopyridine as analyte probe, the enhancement factor can reach 2.99 × 10 5 and 9.97 × 10 5 for plasmonic V cavity and W cavity array, respectively. The relative standard deviations of the plasmonic V and W cavity arrays are 6.5% and 10.2% respectively according to the spectra collected on 20 random spots.

Fabrication of nanopore and nanoparticle arrays with high aspect ratio AAO masks.

PubMed

Li, Z P; Xu, Z M; Qu, X P; Wang, S B; Peng, J; Mei, L H

2017-03-03

How to use high aspect ratio anodic aluminum oxide (AAO) membranes as an etching and evaporation mask is one of the unsolved problems in the application of nanostructured arrays. Here we describe the versatile utilizations of the highly ordered AAO membranes with a high aspect ratio of more than 20 used as universal masks for the formation of various nanostructure arrays on various substrates. The result shows that the fabricated nanopore and nanoparticle arrays of substrates inherit the regularity of the AAO membranes completely. The flat AAO substrates and uneven AAO frontages were attached to the Si substrates respectively as an etching mask, which demonstrates that the two kinds of replication, positive and negative, represent the replication of the mirroring of Si substrates relative to the flat AAO substrates and uneven AAO frontages. Our work is a breakthrough for the broad research field of surface nano-masking.

Fabrication of nanopore and nanoparticle arrays with high aspect ratio AAO masks

NASA Astrophysics Data System (ADS)

Li, Z. P.; Xu, Z. M.; Qu, X. P.; Wang, S. B.; Peng, J.; Mei, L. H.

2017-03-01

How to use high aspect ratio anodic aluminum oxide (AAO) membranes as an etching and evaporation mask is one of the unsolved problems in the application of nanostructured arrays. Here we describe the versatile utilizations of the highly ordered AAO membranes with a high aspect ratio of more than 20 used as universal masks for the formation of various nanostructure arrays on various substrates. The result shows that the fabricated nanopore and nanoparticle arrays of substrates inherit the regularity of the AAO membranes completely. The flat AAO substrates and uneven AAO frontages were attached to the Si substrates respectively as an etching mask, which demonstrates that the two kinds of replication, positive and negative, represent the replication of the mirroring of Si substrates relative to the flat AAO substrates and uneven AAO frontages. Our work is a breakthrough for the broad research field of surface nano-masking.

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Gheshlaghi, N.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-01-01

Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs.

Two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers and their vertical input coupling properties

NASA Astrophysics Data System (ADS)

Wang, Jun; Mu, Xiaoyu; Wang, Gang; Liu, Changlong

2017-11-01

By etching two SiO2 optical waveguide slabs separately implanted with 90 keV Ag ions and 60 keV Cu ions at the same dose of 6 × 1016 cm-2, two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers with 600-nm periodicity and 100-nm thickness were fabricated, and their structural and vertical input coupling properties were investigated. Experimental results revealed that the two couplers could convert light beams at wavelengths of 620-880 nm into guided waves with different efficiencies, highlighting the special importance of metal nanoparticles (NPs). Further discussions also revealed that owing to the introduction of periodically distributed metal NPs, the periodical phase modification of the transmitted beam was enhanced drastically, and the nanocomposite veins could behave as efficient light scatterers. As a result, the two couplers were much larger in coupling efficiency than the NP-free one with identical morphological parameters. The above findings may be useful to construct thin and short but efficient surface-relief grating couplers on glass optical waveguides.

Sub-15 femtosecond laser-induced nanostructures emerging on Si(100) surfaces immersed in water: analysis of structural phases

NASA Astrophysics Data System (ADS)

Straub, M.; Schüle, M.; Afshar, M.; Feili, D.; Seidel, H.; König, K.

2014-04-01

Nanoscale periodic rifts and subwavelength ripples as well as randomly nanoporous surface structures were generated on Si(100) surfaces immersed in water by tightly focused high-repetition rate sub-15 femtosecond sub-nanojoule pulsed Ti:sapphire laser light. Subsequent to laser processing, silicon oxide nanoparticles, which originated from a reaction of ablated silicon with water and aggregated on the exposed areas, were etched off by hydrofluoric acid. The structural phases of the three types of silicon nanostructures were investigated by transmission electron microscopy diffraction images recorded on focused ion beam sections. On nanorift patterns, which were produced at radiant exposure extremely close to the ablation threshold, only the ideal Si-I phase at its original bulk orientation was observed. Electron diffraction micrographs of periodic ripples, which were generated at slightly higher radiant exposure, revealed a compression of Si-I in the vertical direction by 6 %, which is attributed to recoil pressure acting during ablation. However, transitions to the high-pressure phase Si-II, which implies compression in the same direction at pressures in excess of 10 GPa, to the metastable phases Si-III or Si-IV that arise from Si-II on pressure relief or to other high-pressure phases (Si-V-Si-XII) were not observed. The nanoporous surfaces featured Si-I material with grains of resolidified silicon occurring at lattice orientations different from the bulk. Characteristic orientational relationships as well as small-angle grain boundaries reflected the rapid crystal growth on the substrate.

Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption

NASA Astrophysics Data System (ADS)

Kogelschatz, M.; Cunge, G.; Sadeghi, N.

2006-03-01

SiCl{x} radicals, the silicon etching by-products, are playing a major role in silicon gate etching processes because their redeposition on the wafer leads to the formation of a SiOCl{x} passivation layer on the feature sidewalls, which controls the final shape of the etching profile. These radicals are also the precursors to the formation of a similar layer on the reactor walls, leading to process drifts. As a result, the understanding and modelling of these processes rely on the knowledge of their densities in the plasma. Actinometry technique, based on optical emission, is often used to measure relative variations of the density of the above mentioned radicals, even if it is well known that the results obtained with this technique might not always be reliable. To determine the validity domain of actinometry in industrial silicon-etching high density plasmas, we measure the RF source power and pressure dependences of the absolute densities of SiCl{x} (x=0{-}2), SiF and SiBr radicals, deduced from UV broad band absorption spectroscopy. These results are compared to the evolution of the corresponding actinometry signals from these radicals. It is shown that actinometry predicts the global trends of the species density variations when the RF power is changed at constant pressure (that is to say when only the electron density changes) but it completely fails if the gas pressure, hence the electron temperature, changes.

An Ingenious Super Light Trapping Surface Templated from Butterfly Wing Scales

NASA Astrophysics Data System (ADS)

Han, Zhiwu; Li, Bo; Mu, Zhengzhi; Yang, Meng; Niu, Shichao; Zhang, Junqiu; Ren, Luquan

2015-08-01

Based on the super light trapping property of butterfly Trogonoptera brookiana wings, the SiO2 replica of this bionic functional surface was successfully synthesized using a simple and highly effective synthesis method combining a sol-gel process and subsequent selective etching. Firstly, the reflectivity of butterfly wing scales was carefully examined. It was found that the whole reflectance spectroscopy of the butterfly wings showed a lower level (less than 10 %) in the visible spectrum. Thus, it was confirmed that the butterfly wings possessed a super light trapping effect. Afterwards, the morphologies and detailed architectures of the butterfly wing scales were carefully investigated using the ultra-depth three-dimensional (3D) microscope and field emission scanning electronic microscopy (FESEM). It was composed by the parallel ridges and quasi-honeycomb-like structure between them. Based on the biological properties and function above, an exact SiO2 negative replica was fabricated through a synthesis method combining a sol-gel process and subsequent selective etching. At last, the comparative analysis of morphology feature size and the reflectance spectroscopy between the SiO2 negative replica and the flat plate was conducted. It could be concluded that the SiO2 negative replica inherited not only the original super light trapping architectures, but also the super light trapping characteristics of bio-template. This work may open up an avenue for the design and fabrication of super light trapping materials and encourage people to look for more super light trapping architectures in nature.

Ag-NP@Ge-nanotaper/Si-micropillar ordered arrays as ultrasensitive and uniform surface enhanced Raman scattering substrates

NASA Astrophysics Data System (ADS)

Liu, Jing; Meng, Guowen; Li, Zhongbo; Huang, Zhulin; Li, Xiangdong

2015-10-01

Surface-enhanced Raman scattering (SERS) is considered to be an excellent candidate for analytical detection schemes, because of its molecular specificity, rapid response and high sensitivity. Here, SERS-substrates of Ag-nanoparticle (Ag-NP) decorated Ge-nanotapers grafted on hexagonally ordered Si-micropillar (denoted as Ag-NP@Ge-nanotaper/Si-micropillar) arrays are fabricated via a combinatorial process of two-step etching to achieve hexagonal Si-micropillar arrays, chemical vapor deposition of flocky Ge-nanotapers on each Si-micropillar and decoration of Ag-NPs onto the Ge-nanotapers through galvanic displacement. With high density three-dimensional (3D) ``hot spots'' created from the large quantities of the neighboring Ag-NPs and large-scale uniform morphology, the hierarchical Ag-NP@Ge-nanotaper/Si-micropillar arrays exhibit strong and reproducible SERS activity. Using our hierarchical 3D SERS-substrates, both methyl parathion (a commonly used pesticide) and PCB-2 (one congener of highly toxic polychlorinated biphenyls) with concentrations down to 10-7 M and 10-5 M have been detected respectively, showing great potential in SERS-based rapid trace-level detection of toxic organic pollutants in the environment.Surface-enhanced Raman scattering (SERS) is considered to be an excellent candidate for analytical detection schemes, because of its molecular specificity, rapid response and high sensitivity. Here, SERS-substrates of Ag-nanoparticle (Ag-NP) decorated Ge-nanotapers grafted on hexagonally ordered Si-micropillar (denoted as Ag-NP@Ge-nanotaper/Si-micropillar) arrays are fabricated via a combinatorial process of two-step etching to achieve hexagonal Si-micropillar arrays, chemical vapor deposition of flocky Ge-nanotapers on each Si-micropillar and decoration of Ag-NPs onto the Ge-nanotapers through galvanic displacement. With high density three-dimensional (3D) ``hot spots'' created from the large quantities of the neighboring Ag-NPs and large-scale uniform morphology, the hierarchical Ag-NP@Ge-nanotaper/Si-micropillar arrays exhibit strong and reproducible SERS activity. Using our hierarchical 3D SERS-substrates, both methyl parathion (a commonly used pesticide) and PCB-2 (one congener of highly toxic polychlorinated biphenyls) with concentrations down to 10-7 M and 10-5 M have been detected respectively, showing great potential in SERS-based rapid trace-level detection of toxic organic pollutants in the environment. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06001j

Progress Towards Intersubband Quantum-Box Lasers for Highly Efficient Continuous Wave Operation in the Mid-Infrared

DTIC Science & Technology

2009-01-30

Fig. 7. ECV data for CH4/H2/Ar/Cl2/BCl3 and Cl2/ SiCl4 /Ar plasma etching. Ni < 1010/cm2. Subsequently, it was exposed to RIE...etching in either a CH4/H2/Ar/Cl2/BCl3 or a Cl2/ SiCl4 /Ar gas mixture which have been used to fabricate nanoposts for the IQB structures (see next...Argon +BCl3 as well as Inductive Coupled Plasma (ICP) etching using SiCl4 . Using both methods we were able to obtain 30-40 nm-diameter nanopoles on

Selective Epitaxial Graphene Growth on SiC via AlN Capping

NASA Astrophysics Data System (ADS)

Zaman, Farhana; Rubio-Roy, Miguel; Moseley, Michael; Lowder, Jonathan; Doolittle, William; Berger, Claire; Dong, Rui; Meindl, James; de Heer, Walt; Georgia Institute of Technology Team

2011-03-01

Electronic-quality graphene is epitaxially grown by graphitization of carbon-face silicon carbide (SiC) by the sublimation of silicon atoms from selected regions uncapped by aluminum nitride (AlN). AlN (deposited by molecular beam epitaxy) withstands high graphitization temperatures of 1420o C, hence acting as an effective capping layer preventing the growth of graphene under it. The AlN is patterned and etched to open up windows onto the SiC surface for subsequent graphitization. Such selective epitaxial growth leads to the formation of high-quality graphene in desired patterns without the need for etching and lithographic patterning of graphene itself. No detrimental contact of the graphene with external chemicals occurs throughout the fabrication-process. The impact of process-conditions on the mobility of graphene is investigated. Graphene hall-bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. This controlled growth of graphene in selected regions represents a viable approach to fabrication of high-mobility graphene as the channel material for fast-switching field-effect transistors.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Cl atom recombination on silicon oxy-chloride layers deposited on chamber walls in chlorine-oxygen plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

2012-09-15

Chlorine atom recombination coefficients were measured on silicon oxy-chloride surfaces deposited in a chlorine inductively coupled plasma (ICP) with varying oxygen concentrations, using the spinning wall technique. A small cylinder embedded in the walls of the plasma reactor chamber was rapidly rotated, repetitively exposing its surface to the plasma chamber and a differentially pumped analysis chamber housing a quadruple mass spectrometer for line-of-sight desorbing species detection, or an Auger electron spectrometer for in situ surface analysis. The spinning wall frequency was varied from 800 to 30 000 rpm resulting in a detection time, t (the time a point on themore » surface takes to rotate from plasma chamber to the position facing the mass or Auger spectrometer), of {approx}1-40 ms. Desorbing Cl{sub 2}, due to Langmuir-Hinshelwood (LH) Cl atom recombination on the reactor wall surfaces, was detected by the mass spectrometer and also by a pressure rise in one of the differentially pumped chambers. LH Cl recombination coefficients were calculated by extrapolating time-resolved desorption decay curves to t = 0. A silicon-covered electrode immersed in the plasma was either powered at 13 MHz, creating a dc bias of -119 V, or allowed to electrically float with no bias power. After long exposure to a Cl{sub 2} ICP without substrate bias, slow etching of the Si wafer coats the chamber and spinning wall surfaces with an Si-chloride layer with a relatively small amount of oxygen (due to a slow erosion of the quartz discharge tube) with a stoichiometry of Si:O:Cl = 1:0.38:0.38. On this low-oxygen-coverage surface, any Cl{sub 2} desorption after LH recombination of Cl was below the detection limit. Adding 5% O{sub 2} to the Cl{sub 2} feed gas stopped etching of the Si wafer (with no rf bias) and increased the oxygen content of the wall deposits, while decreasing the Cl content (Si:O:Cl = 1:1.09:0.08). Cl{sub 2} desorption was detectable for Cl recombination on the spinning wall surface coated with this layer, and a recombination probability of {gamma}{sub Cl} = 0.03 was obtained. After this surface was conditioned with a pure oxygen plasma for {approx}60 min, {gamma}{sub Cl} increased to 0.044 and the surface layer was slightly enriched in oxygen fraction (Si:O:Cl = 1:1.09:0.04). This behavior is attributed to a mechanism whereby Cl LH recombination occurs mainly on chlorinated oxygen sites on the silicon oxy-chloride surface, because of the weak Cl-O bond compared to the Cl-Si bond.« less

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

NASA Astrophysics Data System (ADS)

Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul

2018-05-01

We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1–xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min‑1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1–xP stop layers even at aluminum contents of a few percent.

Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

NASA Astrophysics Data System (ADS)

Kyoung, Sinsu; Jung, Eun-Sik; Sung, Man Young

2017-07-01

Although trench gate and super-junction technology have micro-trench problems when applied to the SiC process due to the material characteristics. In this paper, area effects are analyzed from the test element group with various patterns and optical proximity correction (OPC) methods are proposed and analyzed to reduce micro-trenches in the SiC trench etching process. First, the loading effects were analyzed from pattern samples with various trench widths (Wt). From experiments, the area must limited under a proper size for a uniform etching profile and reduced micro-trenches because a wider area accelerates the etch rate. Second, the area effects were more severely unbalanced at corner patterns because the corner pattern necessarily has an in-corner and out-corner that have different etching areas to each other. We can balance areas using OPC patterns to overcome this. Experiments with OPC represented improved micro-trench profile from when comparing differences of trench depth (Δdt) at out corner and in corner. As a result, the area effects can be used to improve the trench profile with optimized etching process conditions. Therefore, the trench gate and super-junction pillar of the SiC power MOSFET can have an improved uniform profile without micro-trenches using proper design and OPC.[Figure not available: see fulltext.

Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powell, J. Anthony; Trunek, Andrew; Spry, David; Beheim, Glenn M.; Benavage, Emye; Abel, Phillip; Vetter, William M.; Dudley, Michael

2001-01-01

Homoepitaxial CVD growth of thin lateral cantilevers emanating from the edges of mesa patterns dry-etched into on-axis commercial 4H-SiC substrates prior to growth is reported. Cantilevers on the order of a micrometer thick extending tens of micrometers from the edge of a mesa have been grown. The termination of vertically propagating screw dislocations, including a micropipe, that are overgrown by the cantilevers has been demonstrated, in large part because the crystal structure of the cantilevers is established laterally from the mesa sidewalls. This technique could help reduce performance-degrading dislocations in SiC electrical devices.

Characterization of Cr/6H-SiC(0 0 0 1) nano-contacts by current-sensing AFM

NASA Astrophysics Data System (ADS)

Grodzicki, Miłosz; Smolarek, Szymon; Mazur, Piotr; Zuber, Stefan; Ciszewski, Antoni

2009-11-01

The electrical properties and interface chemistry of Cr/6H-SiC(0 0 0 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H 2 and in situ Ar + ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I- V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar + bombardment. Formation of ohmic nano-contacts on Ar +-bombarded surfaces was observed.

Properties of thin SiC membrane for x-ray mask

NASA Astrophysics Data System (ADS)

Shoki, Tsutomu; Nagasawa, Hiroyuki; Kosuga, Hiroyuki; Yamaguchi, Yoichi; Annaka, Noromichi; Amemiya, Isao; Nagarekawa, Osamu

1993-06-01

We have investigated the effects of film thickness, anti-reflective (AR) coating and surface roughness on the optical transparency of silicon carbide (SiC) membrane. Peak transmittances monotonously increased as the thickness decreased. The transmittance at 633 nm for 1.05 micrometers thick SiC membrane adjusted by reactive ion etching was 70%, and increased up to 80% by an AR coating. SiC membrane with extremely smooth surface of 0.12 nm (Ra) has been obtained by polishing, and had peak transmittances of 69% and 80% at 633 nm for 2.0 micrometers and 1.0 micrometers in thickness, respectively. Poly-crystalline (beta) -SiC membrane in the suitable tensile stress range of 0.3 to 2.0 X 108 Pa and with high Young's modulus of 4.5 X 1011 Pa has been prepared by a hot wall type low pressure chemical vapor deposition, and been found to need to have thickness over 0.7 micrometers to maintain sufficient mechanical strength in processing.

Silicon structuring by etching with liquid chlorine and fluorine precursors using femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radu, C.; Simion, S.; Zamfirescu, M.

2011-08-01

The aim of this study is to investigate the micrometer and submicrometer scale structuring of silicon by liquid chlorine and fluorine precursors with 200 fs laser pulses working at both fundamental (775 nm) and frequency doubled (387 nm) wavelengths. The silicon surface was irradiated at normal incidence by immersing the Si (111) substrates in a glass container filled with liquid chlorine (CCl{sub 4}) and fluorine (C{sub 2}Cl{sub 3}F{sub 3}) precursors. We report that silicon surfaces develop an array of spikes with single step irradiation processes at 775 nm and equally at 387 nm. When irradiating the Si surface with 400more » pulses at 330 mJ/cm{sup 2} laser fluence and a 775 nm wavelength, the average height of the formed Si spikes in the case of fluorine precursors is 4.2 {mu}m, with a full width at half maximum of 890 nm. At the same irradiation wavelength chlorine precursors develop Si spikes 4 {mu}m in height and with a full width at half maximum of 2.3 {mu}m with irradiation of 700 pulses at 560 mJ/cm{sup 2} laser fluence. Well ordered areas of submicrometer spikes with an average height of about 500 nm and a width of 300 nm have been created by irradiation at 387 nm by chlorine precursors, whereas the fluorine precursors fabricate spikes with an average height of 700 nm and a width of about 200 nm. Atomic force microscopy and scanning electron microscopy of the surface show that the formation of the micrometer and sub-micrometer spikes involves a combination of capillary waves on the molten silicon surface and laser-induced etching of silicon, at both 775 nm and 387 nm wavelength irradiation. The energy-dispersive x-ray measurements indicate the presence of chlorine and fluorine precursors on the structured surface. The fluorine precursors create a more ordered area of Si spikes at both micrometer and sub-micrometer scales. The potential use of patterned Si substrates with gradient topography as model scaffolds for the systematic exploration of the role of 3D micro/nano morphology on cell adhesion and growth is envisaged.« less

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

NASA Astrophysics Data System (ADS)

Lapeyrade, Mickael; Alamé, Sabine; Glaab, Johannes; Mogilatenko, Anna; Unger, Ralph-Stephan; Kuhn, Christian; Wernicke, Tim; Vogt, Patrick; Knauer, Arne; Zeimer, Ute; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

2017-09-01

In order to understand the electrical properties of V/Al/Ni/Au metal contacts to Si-doped Al0.75Ga0.25N layers, X-ray photoelectron spectroscopy analysis was performed on differently treated AlGaN:Si surfaces before metal deposition, and transmission electron microscopy was used to study the semiconductor-metal interface after contact annealing at 900 °C. Cl2 plasma etching of AlGaN increases the aluminum/nitrogen ratio at the surface, and Al oxide or oxynitride is always formed by any surface treatment applied after etching. After contact annealing, a complex interface structure including amorphous AlOx and different metal phases such as Al-Au-Ni, V-Al, and V2N were found. The electrical properties of the contacts were determined by thermionic emission and/or thermionic field emission in the low voltage regime. Nearly ohmic contacts on AlGaN surfaces exposed to a Cl2 plasma were only obtained by annealing the sample at a temperature of 815 °C under N2/NH3 prior to metallization. By this treatment, the oxygen contamination on the surface could be minimized, resulting in a larger semiconductor area to be in direct contact with metal phases such as Al-rich Al-Au-Ni or V-Al and leading to a contact resistivity of 2.5 × 10-2 Ω cm2. This treatment can be used to significantly reduce the operating voltage of current deep ultraviolet light emitting diodes which will increase their wall plug efficiency and lower the thermal stress during their operation.

Etch Profile Simulation Using Level Set Methods

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1997-01-01

Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu

2016-07-15

Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreasedmore » sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.« less

A study on the reaction between chlorine trifluoride gas and glass-like carbon

NASA Astrophysics Data System (ADS)

Saito, Yoji; Nishizawa, Takashi; Hamaguchi, Maki

2005-02-01

The reaction between glass-like carbon (GC) and chlorine trifluoride (ClF 3) gas was investigated with weight measurements, surface analysis, and gas desorption measurements, where the ClF 3 gas is used for the in situ cleaning of tubes in silicon-related fabrication equipment. From Auger electron spectroscopy and X-ray photoelectron spectroscopy measurements, a carbon mono-fluoride, -(CF) n-, film near the surface of GC is considered to be grown onto the GC surface above 400 °C by the chemical reaction with ClF 3, and this thickness of the fluoride film depends on the temperature. The grown fluoride film desorbs by annealing in a vacuum up to 600 °C. Although GC is apparently etched by ClF 3 over 600 °C, the etch rate of GC is much lower than that of SiC and quartz.

Enhanced emission of charged-exciton polaritons from colloidal quantum dots on a SiN/SiO2 slab waveguide

PubMed Central

Xu, Xingsheng; Li, Xingyun

2015-01-01

We investigate the photoluminescence (PL) spectra and the time-resolved PL decay process from colloidal quantum dots on SiN/SiO2 wet etched via BOE (HF:NH4F:H2O). The spectrum displays multi-peak shapes that vary with irradiation time. The evolution of the spectral peaks with irradiation time and collection angle demonstrates that the strong coupling of the charged-exciton emission to the leaky modes of the SiN/SiO2 slab waveguide predominantly produces short-wavelength spectral peaks, resulting in multi-peak spectra. We conclude that BOE etching enhances the charged-exciton emission efficiency and its contribution to the total emission compared with the unetched case. BOE etching smoothes the electron confinement potential, thus decreasing the Auger recombination rate. Therefore, the charged-exciton emission efficiency is high, and the charged-exciton-polariton emission can be further enhanced through strong coupling to the leaky mode of the slab waveguide. PMID:25988709

High quality InP-on-Si for solar cell applications

NASA Technical Reports Server (NTRS)

Shellenbarger, Zane A.; Goodwin, Thomas A.; Collins, Sandra R.; Dinetta, Louis C.

1994-01-01

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

NASA Astrophysics Data System (ADS)

Zamani, Davoud

ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources. The second objective of this study is to develop new rinse methods to reduce water and energy usage during rinsing and cleaning of hafnium based high-κ materials in single wafer-cleaning tools. It is necessary to have a metrology method which can study the effect of all process parameters that affect the rinsing by knowing surface concentration of contaminants in patterned hafnium based oxides and silicate wafers. This has been achieved by the introduction of a metrology method at The University of Arizona which monitors the transport of contaminant concentrations inside micro- and nano- structures. This is the only metrology which will be able to provide surface concentration of contaminants inside hafnium based oxides and silicate micro-structures while the rinsing process is taking place. The goal of this research is to study the effect of various process parameters on rinsing of patterned hafnium based oxides and silicate wafers, and modify a metrology method for end point detection.

Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; He, Jim; Choi, Jinhan; Collins, Ken

2011-10-01

Plasma etching for microelectronics fabrication is facing extreme challenges as processes are developed for advanced technological nodes. As device sizes shrink, control of shallow trench isolation (STI) features become more important in both logic and memory devices. Halogen-based inductively coupled plasmas in a pressure range of 20-60 mTorr are typically used to etch STI features. The need for improved performance and shorter development cycles are placing greater emphasis on understanding the underlying mechanisms to meet process specifications. In this work, a surface mechanism for STI etch process will be discussed that couples a fundamental plasma model to experimental etch process measurements. This model utilizes ion/neutral fluxes and energy distributions calculated using the Hybrid Plasma Equipment Model. Experiments are for blanket Si wafers in a Cl2/HBr/O2/N2 plasma over a range of pressures, bias powers, and flow rates of feedstock gases. We found that kinetic treatment of electron transport was critical to achieve good agreement with experiments. The calibrated plasma model is then coupled to a string-based feature scale model to quantify the effect of varying process parameters on the etch profile. We found that the operating parameters strongly influence critical dimensions but have only a subtle impact on the etch depths.

Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

PubMed Central

Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

2016-01-01

Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a highly significant result (p<.001). GrD2 had a mean dentinal tubule diameter of 2.78μm and GrD3 of 1.09μm. Conclusion The present study revealed type I etching pattern after acid etching, while type III etching pattern in enamel after laser etching. The lased dentin showed preferential removal of intertubular dentin while acid etching had more effect on the peritubular dentin. No significant differences was observed in removal of smear layer between the acid etched and lased groups. Although diameter of the exposed dentinal tubules was lesser after lased treatment in comparison to acid etching, further long term in vivo studies are needed with different parameters to establish the usage of Er,Cr:YSGG as a sole etching agent. PMID:27437337

Porous Silicon Gradient Refractive Index Micro-Optics.

PubMed

Krueger, Neil A; Holsteen, Aaron L; Kang, Seung-Kyun; Ocier, Christian R; Zhou, Weijun; Mensing, Glennys; Rogers, John A; Brongersma, Mark L; Braun, Paul V

2016-12-14

The emergence and growth of transformation optics over the past decade has revitalized interest in how a gradient refractive index (GRIN) can be used to control light propagation. Two-dimensional demonstrations with lithographically defined silicon (Si) have displayed the power of GRIN optics and also represent a promising opportunity for integrating compact optical elements within Si photonic integrated circuits. Here, we demonstrate the fabrication of three-dimensional Si-based GRIN micro-optics through the shape-defined formation of porous Si (PSi). Conventional microfabrication creates Si square microcolumns (SMCs) that can be electrochemically etched into PSi elements with nanoscale porosity along the shape-defined etching pathway, which imparts the geometry with structural birefringence. Free-space characterization of the transmitted intensity distribution through a homogeneously etched PSi SMC exhibits polarization splitting behavior resembling that of dielectric metasurfaces that require considerably more laborious fabrication. Coupled birefringence/GRIN effects are studied by way of PSi SMCs etched with a linear (increasing from edge to center) GRIN profile. The transmitted intensity distribution shows polarization-selective focusing behavior with one polarization focused to a diffraction-limited spot and the orthogonal polarization focused into two laterally displaced foci. Optical thickness-based analysis readily predicts the experimentally observed phenomena, which strongly match finite-element electromagnetic simulations.

Structures Self-Assembled Through Directional Solidification

NASA Technical Reports Server (NTRS)

Dynys, Frederick W.; Sayir, Ali

2005-01-01

Nanotechnology has created a demand for new fabrication methods with an emphasis on simple, low-cost techniques. Directional solidification of eutectics (DSE) is an unconventional approach in comparison to low-temperature biomimetic approaches. A technical challenge for DSE is producing microstructural architectures on the nanometer scale. In both processes, the driving force is the minimization of Gibb's free energy. Selfassembly by biomimetic approaches depends on weak interaction forces between organic molecules to define the architectural structure. The architectural structure for solidification depends on strong chemical bonding between atoms. Constituents partition into atomic-level arrangements at the liquid-solid interface to form polyphase structures, and this atomic-level arrangement at the liquid-solid interface is controlled by atomic diffusion and total undercooling due to composition (diffusion), kinetics, and curvature of the boundary phases. Judicious selection of the materials system and control of the total undercooling are the keys to producing structures on the nanometer scale. The silicon-titanium silicide (Si-TiSi2) eutectic forms a rod structure under isothermal cooling conditions. At the NASA Glenn Research Center, directional solidification was employed along with a thermal gradient to promote uniform rods oriented with the thermal gradient. The preceding photomicrograph shows the typical transverse microstructure of a solidified Si-TiSi2 eutectic composition. The dark and light gray regions are Si and TiSi2, respectively. Preferred rod orientation along the thermal gradient was poor. The ordered TiSi2 rods have a narrow distribution in diameter of 2 to 3 m, as shown. The rod diameter showed a weak dependence on process conditions. Anisotropic etch behavior between different phases provides the opportunity to fabricate structures with high aspect ratios. The photomicrographs show the resulting microstructure after a wet chemical etch and a dry plasma etch. The wet chemical etches the silicon away, exposing the TiSi2 rods, whereas plasma etching preferentially etches the Si-TiSi2 interface to form a crater. The porous architectures are applicable to fabricating microdevices or creating templates for part fabrication. The porous rod structure can serve as a platform for fabricating microplasma devices for propulsion or microheat exchangers and for fabricating microfilters for miniatured chemical reactors. Although more work is required, self-assembly from DSE can have a role in microdevice fabrication.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Yunpeng; Sawin, Herbert H.

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO{sub 2}), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followedmore » the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide.« less

Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation.

PubMed

Krasnov, A A; Starkov, V V; Legotin, S A; Rabinovich, O I; Didenko, S I; Murashev, V N; Cheverikin, V V; Yakimov, E B; Fedulova, N A; Rogozev, B I; Laryushkin, A S

2017-03-01

In the paper a manufacturing process of three-dimensional (3D) microchannel structure by silicon (Si) anodic etching was discussed. The possibility of microchannels formation allows to increase the active area more than 100 times. In this structure the p-n junction on the whole Si surface was formed. The obtained data allowed to evaluate the characteristics of the betavoltaic converter with a 3D structure by using isotope 63Ni with a specific activity of 10Ci/g. Copyright © 2016 Elsevier Ltd. All rights reserved.

Epitaxial CoSi2 on MOS devices

DOEpatents

Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

2005-01-25

An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates

NASA Astrophysics Data System (ADS)

Lemang, M.; Rodriguez, Ph.; Nemouchi, F.; Juhel, M.; Grégoire, M.; Mangelinck, D.

2018-02-01

Phosphorus diffusion and its distribution during the solid-state reactions between Ni0.9Pt0.1 and implanted Si substrates are studied. Silicidation is achieved through a first rapid thermal annealing followed by a selective etching and a direct surface annealing. The redistribution of phosphorus in silicide layers is investigated after the first annealing for different temperatures and after the second annealing. Phosphorus concentration profiles obtained thanks to time of flight secondary ion mass spectrometry and atom probe tomography characterizations for partial and total reactions of the deposited 7 nm thick Ni0.9Pt0.1 film are presented. Phosphorus segregation is observed at the Ni0.9Pt0.1 surface and at Ni2Si interfaces during Ni2Si formation and at the NiSi surface and the NiSi/Si interface after NiSi formation. The phosphorus is evidenced in low concentrations in the Ni2Si and NiSi layers. Once NiSi is formed, a bump in the phosphorus concentration is highlighted in the NiSi layer before the NiSi/Si interface. Based on these profiles, a model for the phosphorus redistribution is proposed to match this bump to the former Ni2Si/Si interface. It also aims to bind the phosphorus segregation and its low concentration in different silicides to a low solubility of phosphorus in Ni2Si and in NiSi and a fast diffusion of phosphorus at their grain boundaries. This model is also substantiated by a simulation using a finite difference method in one dimension.

Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

PubMed

Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

2014-09-10

Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

Functionalization of silicon nanowires by conductive and non-conductive polymers

NASA Astrophysics Data System (ADS)

Belhousse, S.; Tighilt, F.-Z.; Sam, S.; Lasmi, K.; Hamdani, K.; Tahanout, L.; Megherbi, F.; Gabouze, N.

2017-11-01

The work reports on the development of hybrid devices based on silicon nanowires (SiNW) with polymers and the difference obtained when using conductive and non-conductive polymers. SiNW have attracted much attention due to their importance in understanding the fundamental properties at low dimensionality as well as their potential application in nanoscale devices as in field effect transistors, chemical or biological sensors, battery electrodes and photovoltaics. SiNW arrays were formed using metal assisted chemical etching method. This process is simple, fast and allows obtaining a wide range of silicon nanostructures. Hydrogen-passivated SiNW surfaces show relatively poor stability. Surface modification with organic species confers the desired stability and enhances the surface properties. For this reason, this work proposes a covalent grafting of organic material onto SiNW surface. We have chosen a non-conductive polymer polyvinylpyrrolidone (PVP) and conductive polymers polythiophene (PTh) and polypyrrole (PPy), in order to evaluate the electric effect of the polymers on the obtained materials. The hybrid structures were elaborated by the polymerization of the corresponding conjugated monomers by electrochemical route; this electropolymerization offers several advantages such as simplicity and rapidity. SiNW functionalization by conductive polymers has shown to have a huge effect on the electrical mobility. Hybrid surface morphologies were characterized by scanning electron microscopy (SEM), infrared spectroscopy (FTIR-ATR) and contact angle measurements.

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

PubMed

Yuryev, Vladimir A; Arapkina, Larisa V

2011-09-05

Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.

Detection of Hydrofluoric Acid by a SiO2 Sol-Gel Coating Fiber-Optic Probe Based on Reflection-Based Localized Surface Plasmon Resonance

PubMed Central

Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Du, Je-Kang

2011-01-01

A novel fiber-optic probe based on reflection-based localized surface plasmon resonance (LSPR) was developed to quantify the concentration of hydrofluoric acid (HF) in aqueous solutions. The LSPR sensor was constructed with a gold nanoparticle-modified PMMA fiber, integrated with a SiO2 sol-gel coating. This fiber-sensor was utilized to assess the relationship between HF concentration and SiO2 sol-gel layer etching reduction. The results demonstrated the LSPR sensor was capable of detecting HF-related erosion of hydrofluoric acid solutions of concentrations ranging from 1% to 5% using Relative RI Change Rates. The development of the LSPR sensor constitutes the basis of a detector with significant sensitivity for practical use in monitoring HF solution concentrations. PMID:22319388

Synthesis and Characterization of Silicon Nanowires by Electroless Etching

NASA Astrophysics Data System (ADS)

Bhujel, Rabina; Rizal, Umesh; Agarwal, Amit; Swain, Bhabani S.; Swain, Bibhu P.

2018-02-01

Silicon nanowires (SiNWs) were synthesized by two-step electroless etching of p-type Si (100) wafer and characterized by field emission scanning electron microscopy, UV-Vis spectroscopy, x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The vibrational signature at 1108 and 2087 cm-1 confirmed SiNWs were passivated by both oxygen and hydrogen atoms. Raman peak at 517 cm-1 indicated crystalline SiNWs with tailing toward redshift due to Fano effect. The Si(2p) and Si(2s) core orbital spectra of SiNWs were found at 99.8 and 150.5 eV, respectively. Moreover, the reflection of SiNWs is minimized to 1 to 5% in the 650-nm wavelength.

Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

PubMed

Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

2013-05-01

In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

Delicate Structural Control of Si-SiOx-C Composite via High-Speed Spray Pyrolysis for Li-Ion Battery Anodes.

PubMed

Lee, Seung Jong; Kim, Hye Jin; Hwang, Tae Hoon; Choi, Sunghun; Park, Sung Hyeon; Deniz, Erhan; Jung, Dae Soo; Choi, Jang Wook

2017-03-08

Despite the high theoretical capacity, silicon (Si) anodes in lithium-ion batteries have difficulty in meeting the commercial standards in various aspects. In particular, the huge volume change of Si makes it very challenging to simultaneously achieve high initial Coulombic efficiency (ICE) and long-term cycle life. Herein, we report spray pyrolysis to prepare Si-SiO x composite using an aqueous precursor solution containing Si nanoparticles, citric acid, and sodium hydroxide (NaOH). In the precursor solution, Si nanoparticles are etched by NaOH with the production of [SiO 4 ] 4- . During the dynamic course of spray pyrolysis, [SiO 4 ] 4- transforms to SiO x matrix and citric acid decomposes to carbon surface layer with the assistance of NaOH that serves as a decomposition catalyst. As a result, a Si-SiO x composite, in which Si nanodomains are homogeneously embedded in the SiO x matrix with carbon surface layer, is generated by a one-pot process with a residence time of only 3.5 s in a flow reactor. The optimal composite structure in terms of Si domain size and Si-to-O ratio exhibited excellent electrochemical performance, such as reversible capacity of 1561.9 mAh g -1 at 0.06C rate and ICE of 80.2% and 87.9% capacity retention after 100 cycles at 1C rate.

Foundations of low-temperature plasma enhanced materials synthesis and etching

NASA Astrophysics Data System (ADS)

Oehrlein, Gottlieb S.; Hamaguchi, Satoshi

2018-02-01

Low temperature plasma (LTP)-based synthesis of advanced materials has played a transformational role in multiple industries, including the semiconductor industry, liquid crystal displays, coatings and renewable energy. Similarly, the plasma-based transfer of lithographically defined resist patterns into other materials, e.g. silicon, SiO2, Si3N4 and other electronic materials, has led to the production of nanometer scale devices that are the basis of the information technology, microsystems, and many other technologies based on patterned films or substrates. In this article we review the scientific foundations of both LTP-based materials synthesis at low substrate temperature and LTP-based isotropic and directional etching used to transfer lithographically produced resist patterns into underlying materials. We cover the fundamental principles that are the basis of successful application of the LTP techniques to technological uses and provide an understanding of technological factors that may control or limit material synthesis or surface processing with the use of LTP. We precede these sections with a general discussion of plasma surface interactions, the LTP-generated particle fluxes including electrons, ions, radicals, excited neutrals and photons that simultaneously contact and modify surfaces. The surfaces can be in the line of sight of the discharge or hidden from direct interaction for structured substrates. All parts of the article are extensively referenced, which is intended to help the reader study the topics discussed here in more detail.

Preparation and Characterization of Thermoresponsive Poly(N-isopropylacrylamide-co-acrylic acid)-Grafted Hollow Fe3O4/SiO2 Microspheres with Surface Holes for BSA Release

PubMed Central

Zhao, Jing; Zeng, Ming; Zheng, Kaiqiang; He, Xinhua; Xie, Minqiang; Fu, Xiaoyi

2017-01-01

Thermoresponsive P(NIPAM-AA)/Fe3O4/SiO2 microspheres with surface holes serving as carriers were prepared using p-Fe3O4/SiO2 microspheres with a thermoresponsive copolymer. The p-Fe3O4/SiO2 microspheres was obtained using a modified Pickering method and chemical etching. The surface pore size of p-Fe3O4/SiO2 microspheres was in the range of 18.3 nm~37.2 nm and the cavity size was approximately 60 nm, which are suitable for loading and transporting biological macromolecules. P(NIPAM-AA) was synthesized inside and outside of the p-Fe3O4/SiO2 microspheres via atom transfer radical polymerization of NIPAM, MBA and AA. The volume phase transition temperature (VPTT) of the specifically designed P(NIPAM-AA)/Fe3O4/SiO2 microspheres was 42.5 °C. The saturation magnetization of P(NIPAM-AA)/Fe3O4/SiO2 microspheres was 72.7 emu/g. The P(NIPAM-AA)/Fe3O4/SiO2 microspheres were used as carriers to study the loading and release behavior of BSA. This microsphere system shows potential for the loading of proteins as a drug delivery platform. PMID:28772770

Composition and conductance distributions of single GeSi quantum rings studied by conductive atomic force microscopy combined with selective chemical etching.

PubMed

Lv, Y; Cui, J; Jiang, Z M; Yang, X J

2013-02-15

Atomic force microscopy imaging combined with selective chemical etching is employed to quantitatively investigate three-dimensional (3D) composition distributions of single GeSi quantum rings (QRs). In addition, the 3D quantitative composition distributions and the corresponding conductance distributions are simultaneously obtained on the same single GeSi QRs by conductive atomic force microscopy combined with selective chemical etching, allowing us to investigate the correlations between the conductance and composition distributions of single QRs. The results show that the QRs' central holes have higher Ge content, but exhibit lower conductance, indicating that the QRs' conductance distribution is not consistent with their composition distribution. By comparing the topography, composition and conductance profiles of the same single QRs before and after different etching processes, it is found that the conductance distributions of GeSi QRs do not vary with the change of composition distribution. Instead, the QRs' conductance distributions are found to be consistent with their topographic shapes, which can be supposed to be due to the shape determined electronic structures.

Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.

PubMed

Venturi, Giulia; Castaldini, Antonio; Schleusener, Alexander; Sivakov, Vladimir; Cavallini, Anna

2015-05-15

Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.

Template-etching route to construct uniform rattle-type Fe3O4@SiO2 hollow microspheres as drug carrier.

PubMed

Cheng, Lin; Liu, Yuanyuan; Zou, Bingfang; Yu, Yong; Ruan, Weimin; Wang, Yongqiang

2017-06-01

Template-etching strategy was put forward to synthesize rattle-type magnetic silica (Fe 3 O 4 @SiO 2 ) hollow microspheres in a controlled way. During the experiment, monodisperse Fe 2 O 3 microspheres were fabricated as physical template to generate uniform Fe 2 O 3 @SiO 2 with controlled shell thicknesses through sol-gel method, and the subsequent Fe 2 O 3 template etching process created variable space between Fe 2 O 3 core and SiO 2 shell, and the final calcination process transformed rattle-type Fe 2 O 3 @SiO 2 hollow microspheres into corresponding Fe 3 O 4 @SiO 2 product in hydrogen/nitrogen atmosphere. Compared with traditional physical template, here template-etching synthesis of rattle-type hollow microspheres saved the insertion of middle shells and their removal, which simplified the synthesis process with controllable core size and shell thickness. The rattle-type Fe 3 O 4 @SiO 2 hollow microspheres as drug carrier show efficient doxorubicin (DOX) loading, and the release rate of DOX loaded the rattle-type Fe 3 O 4 @SiO 2 hollow microspheres exhibit a surprising shell-thickness-dependent and a pH responsive drug release features. Additionally, MTT assays in HeLa cells demonstrated that the Fe 3 O 4 @SiO 2 nanocarriers were non-toxic even at the concentration of 250µgmL -1 for 48h. Thus, our results revealed that the Fe 3 O 4 @SiO 2 -DOX could play an important role in the development of intracellular delivery nanodevices for cancer therapy. Copyright © 2017. Published by Elsevier B.V.

Passivation of InSb surface for manufacturing infrared devices

NASA Astrophysics Data System (ADS)

Simchi, H.; Sareminia, Gh.; Shafiekhani, A.; Valizadeh, Gh.

2008-01-01

We studied the reduction of active surface states at the InSb/insulator interface by the reduction of hysteresis in C- V plots and by the performance of InSb diodes operated in photovoltaic mode. The InSb wafers were cleaned with CP4A etchant (HNO 3:CH 3COOH:HF:H 2O at 2:1:1:10). Then layers of 0.4 μm SiO 2, 0.4 μm Si 3N 4 and 0.5 μm Si 3N 4/SiO 2 were deposited on the cleaned surfaced by plasma enhanced chemical vapor deposition (PECVD). After measuring the surface morphology by atomic force microscopy (AFM) the atomic percentage of each element in each compound (e.g. Si and O 2 in SiO 2 layer) was studied by energy-dispersive X-ray spectroscopy (EDX). By using photoemission spectroscopy (XPS), we showed that the SiO 2, Si 3N 4 and Si 3N 4/SiO 2 layers include Sb and/or SbO x and the Sb In antisite during deposition occurred and for this reason their etch rates differ from pure SiO 2, Si 3N 4 and Si 3N 4/SiO 2 layers. Then the gold metal was deposited on the samples and capacitance voltage measurement was made on the MIS samples. The results showed hysteresis free curves if the surface has been cleaned correctly. Finally by depositing the 0.4 μm SiO 2, 0.4 μm Si 3N 4 and 0.5 μm Si 3N 4/SiO 2 on diode structure of InSb, the performance of diode in this case was compared with the anodic oxidation method. The results showed the performance of device is better than for the anodic oxidation method.

Anisotropic Hydrogen Etching of Chemical Vapor Deposited Graphene

NASA Astrophysics Data System (ADS)

Zhang, Yi; Li, Zhen; Zhang, Luyao; Kim, Pyojae; Zhou, Chongwu

2012-02-01

In terms of the preparation of graphene, chemical vapor deposition (CVD) has raised its popularity as a scalable and cost effective approach for graphene synthesis. While the formation of graphene on copper foil has been intensively studied, the reverse reaction of graphene reacts with hydrogen has not been systematically studied. In this talk we will present a simple, clean, and highly anisotropic hydrogen etching method for CVD graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 ^oC, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent and the etching of graphene at 800 oC is most efficient and anisotropic. 80% of the angles of graphene edges after etching are 120^o, indicating the etching is highly anisotropic. No increase of D band along the etched edges indicates that the crystallographic orientation of etching is zigzag direction. Furthermore, we observed that copper played an important role in catalyzing the etching reaction, as no etching was observed for graphene transferred to Si/SiO2 under similar conditions. This highly anisotropic hydrogen etching technology may work as a simple and convenient way to determine graphene crystal orientation and grain size, and may enable the etching of graphene into nanoribbons for electronic applications.

Examination of the laser-induced variations in the chemical etch rate of a photosensitive glass ceramic

NASA Astrophysics Data System (ADS)

Voges, Melanie; Beversdorff, Manfred; Willert, Chris; Krain, Hartmut

2007-10-01

Previous studies in our laboratory have reported that the chemical etch rate of a commercial photosensitive glass ceramic (FoturanTM, Schott Corp., Germany) in dilute hydrofluoric acid is strongly dependent on the incident laser irradiance during patterning at λ=266 nm and λ=355 nm. To help elucidate the underlying chemical and physical processes associated with the laser-induced variations in the chemical etch rate, several complimentary techniques were employed at various stages of the UV laser exposure and thermal treatment. X-ray diffraction (XRD) was used to identify the crystalline phases that are formed in Foturan following laser irradiation and annealing, and monitor the crystalline content as a function of laser irradiance at λ=266 nm and λ=355 nm. The XRD results indicate the nucleation of lithium metasilicate (Li2SiO3) crystals as the exclusive phase following laser irradiation and thermal treatment at temperatures not exceeding 605 °C. The XRD studies also show that the Li2SiO3 density increases with increasing laser irradiance and saturates at high laser irradiance. For our thermal treatment protocol, the average Li2SiO3 crystal diameters are 117.0±10.0 nm and 91.2±5.8 nm for λ=266 nm and λ=355 nm, respectively. Transmission electron microscopy (TEM) was utilized to examine the microscopic structural features of the lithium metasilicate crystals. The TEM results reveal that the growth of lithium metasilicate crystals proceeds dendritically, and produces Li2SiO3 crystals that are ˜700 1000 nm in length for saturation exposures. Optical transmission spectroscopy (OTS) was used to study the growth of metallic silver clusters that act as nucleation sites for the Li2SiO3 crystalline phase. The OTS results show that the (Ag0)x cluster concentration has a dependence on incident laser irradiance that is similar to the etch rate ratios and Li2SiO3 concentration. A comparison between the XRD and optical transmission results and our prior etch rate results show that the etch rate contrast and absolute etch rates are dictated by the Li2SiO3 concentration, which is in turn governed by the (Ag0)x cluster concentration. These results characterize the relationship between the laser exposure and chemical etch rate for Foturan, and permit a more detailed understanding of the photophysical processes that occur in the general class of photostructurable glass ceramic materials. Consequently, these results may also influence the laser processing of other photoactive materials.

Lung toxicities of core–shell nanoparticles composed of carbon, cobalt, and silica

PubMed Central

Al Samri, Mohammed T; Silva, Rafael; Almarzooqi, Saeeda; Albawardi, Alia; Othman, Aws Rashad Diab; Al Hanjeri, Ruqayya SMS; Al Dawaar, Shaikha KM; Tariq, Saeed; Souid, Abdul-Kader; Asefa, Tewodros

2013-01-01

We present here comparative assessments of murine lung toxicity (biocompatibility) after in vitro and in vivo exposures to carbon (C–SiO2-etched), carbon–silica (C–SiO2), carbon–cobalt–silica (C–Co–SiO2), and carbon–cobalt oxide–silica (C–Co3O4–SiO2) nanoparticles. These nanoparticles have potential applications in clinical medicine and bioimaging, and thus their possible adverse events require thorough investigation. The primary aim of this work was to explore whether the nanoparticles are biocompatible with pneumatocyte bioenergetics (cellular respiration and adenosine triphosphate content). Other objectives included assessments of caspase activity, lung structure, and cellular organelles. Pneumatocyte bioenergetics of murine lung remained preserved after treatment with C–SiO2-etched or C–SiO2 nanoparticles. C–SiO2-etched nanoparticles, however, increased caspase activity and altered lung structure more than C–SiO2 did. Consistent with the known mitochondrial toxicity of cobalt, both C–Co–SiO2 and C–Co3O4–SiO2 impaired lung tissue bioenergetics. C–Co–SiO2, however, increased caspase activity and altered lung structure more than C–Co3O4–SiO2. The results indicate that silica shell is essential for biocompatibility. Furthermore, cobalt oxide is the preferred phase over the zerovalent Co(0) phase to impart biocompatibility to cobalt-based nanoparticles. PMID:23658487

Selective deposition for ''chamber clean-free'' processes using tailored voltage waveform plasmas

NASA Astrophysics Data System (ADS)

Wang, Junkang; v. Johnson, Erik

2016-09-01

Tailored Voltage Waveforms (TVWs) have been proven capable of creating plasma asymmetries in otherwise symmetric CCP reactors. Particularly, sawtooth TVWs (described as having strong slope-asymmetry due to different voltage rise/fall slope) can lead to different sheath dynamics, thus generating strongly asymmetric ionization near each electrode. To date, research concerning the slope-asymmetry has only focused on single-gas plasmas. Herein, we present a study looking at SiF4/H2/Ar mixtures to investigate silicon thin film deposition. The resulting surface process depends strongly on multiple precursors, and the deposition requires a specific balance between surface arrival rates of SiFx and H. For a certain gas flow ratio, we can obtain a deposition rate of 0.82Å/s on one electrode and an etching rate of 1.2Å/s on the other. Moreover, the deposition/etching balance can be controlled by H2 flow and waveform amplitude. This is uniquely possible due to the mixed-gas nature of the process and localized ionization generated by sawtooth TVWs. This encourages the prospect that one could choose process conditions to achieve a variety of desired depositions on one electrode, while leaving the other pristine.

Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

NASA Astrophysics Data System (ADS)

Zhang, L.; Heinig, N. F.; Bazargan, S.; Abd-Ellah, M.; Moghimi, N.; Leung, K. T.

2015-06-01

The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion-Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation.

Nanowires from dirty multi-crystalline Si for hydrogen generation

NASA Astrophysics Data System (ADS)

Li, Xiaopeng; Schweizer, Stefan L.; Sprafke, Alexander; Wehrspohn, Ralf B.

2013-09-01

Silicon nanowires are considered as a promising architecture for solar energy conversion systems. By metal assisted chemical etching of multi-crystalline upgraded metallurgical silicon (UMG-Si), large areas of silicon nanowires (SiNWs) with high quality can be produced on the mother substrates. These areas show a low reflectance comparable to black silicon. More interestingly, we find that various metal impurities inside UMG-Si are removed due to the etching through element analysis. A prototype cell was built to test the photoelectrochemical (PEC) properties of UMG-SiNWs for water splitting. The on-set potential for hydrogen evolution was much reduced, and the photocurrent density showed an increment of 35% in comparison with a `dirty' UMG-Si wafer.

Pattern transfer with stabilized nanoparticle etch masks

NASA Astrophysics Data System (ADS)

Hogg, Charles R.; Picard, Yoosuf N.; Narasimhan, Amrit; Bain, James A.; Majetich, Sara A.

2013-03-01

Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiOx substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results.

Femtosecond transient absorption spectroscopy of silanized silicon quantum dots

NASA Astrophysics Data System (ADS)

Kuntermann, Volker; Cimpean, Carla; Brehm, Georg; Sauer, Guido; Kryschi, Carola; Wiggers, Hartmut

2008-03-01

Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of 4nm were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from 0.3psto2.3ns using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a 150fs pump pulse at 390nm was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within 0.6ps . Exciton capturing by surface states forming shallow traps in the amorphous SiOx shell was found to occur with a time constant of 4ps , whereas deeper traps presumably localized in the Si-SiOx interface gave rise to exciton trapping processes with time constants of 110 and 180ps . Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots (>2nm) was observed to take place within 400 or 700fs .

Oxide and hydrogen capped ultrasmall blue luminescent Si nanoparticles

NASA Astrophysics Data System (ADS)

Belomoin, Gennadiy; Therrien, Joel; Nayfeh, Munir

2000-08-01

We dispersed electrochemical etched silicon into a colloid of ultrasmall ultrabright Si nanoparticles. Direct imaging using transmission electron microscopy shows particles of ˜1 nm in diameter, and infrared and electron photospectroscopy show that they are passivated with hydrogen. Under 350 nm excitation, the luminescence is dominated by an extremely strong blue band at 390 nm. We replace hydrogen by a high-quality ultrathin surface oxide cap by self-limiting oxidation in H2O2. Upon capping, the excitation efficiency drops, but only by a factor of 2, to an efficiency still two-fold larger than that of fluorescein. Although of slightly lower brightness, capped Si particles have superior biocompatability, an important property for biosensing applications.

Kinked silicon nanowires-enabled interweaving electrode configuration for lithium-ion batteries.

PubMed

Sandu, Georgiana; Coulombier, Michael; Kumar, Vishank; Kassa, Hailu G; Avram, Ionel; Ye, Ran; Stopin, Antoine; Bonifazi, Davide; Gohy, Jean-François; Leclère, Philippe; Gonze, Xavier; Pardoen, Thomas; Vlad, Alexandru; Melinte, Sorin

2018-06-28

A tri-dimensional interweaving kinked silicon nanowires (k-SiNWs) assembly, with a Ni current collector co-integrated, is evaluated as electrode configuration for lithium ion batteries. The large-scale fabrication of k-SiNWs is based on a procedure for continuous metal assisted chemical etching of Si, supported by a chemical peeling step that enables the reuse of the Si substrate. The kinks are triggered by a simple, repetitive etch-quench sequence in a HF and H 2 O 2 -based etchant. We find that the inter-locking frameworks of k-SiNWs and multi-walled carbon nanotubes exhibit beneficial mechanical properties with a foam-like behavior amplified by the kinks and a suitable porosity for a minimal electrode deformation upon Li insertion. In addition, ionic liquid electrolyte systems associated with the integrated Ni current collector repress the detrimental effects related to the Si-Li alloying reaction, enabling high cycling stability with 80% capacity retention (1695 mAh/g Si ) after 100 cycles. Areal capacities of 2.42 mAh/cm 2 (1276 mAh/g electrode ) can be achieved at the maximum evaluated thickness (corresponding to 1.3 mg Si /cm 2 ). This work emphasizes the versatility of the metal assisted chemical etching for the synthesis of advanced Si nanostructures for high performance lithium ion battery electrodes.

High density plasma etching of magnetic devices

NASA Astrophysics Data System (ADS)

Jung, Kee Bum

Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3-rich to achieve the highest etch rates. Several different mask materials were investigated, including photoresist, thermal oxide and deposited oxide. Photoresist etches very rapidly in CO/NH 3 and use of a hard mask is necessary to achieve pattern transfer. Due to its physically dominated nature, the CO/NH3 chemistry appears suited to shallow etch depth (≤0.5mum) applications, but mask erosion leads to sloped feature sidewalls for deeper features.

Fabrication of ZIF-8@SiO2 Micro/Nano Hierarchical Superhydrophobic Surface on AZ31 Magnesium Alloy with Impressive Corrosion Resistance and Abrasion Resistance.

PubMed

Wu, Cuiqing; Liu, Qi; Chen, Rongrong; Liu, Jingyuan; Zhang, Hongsen; Li, Rumin; Takahashi, Kazunobu; Liu, Peili; Wang, Jun

2017-03-29

Superhydrophobic coatings are highly promising for protecting material surfaces and for wide applications. In this study, superhydrophobic composites, comprising a rhombic-dodecahedral zeolitic imidazolate framework (ZIF-8@SiO 2 ), have been manufactured onto AZ31 magnesium alloy via chemical etching and dip-coating methods to enhance stability and corrosion resistance. Herein, we report on a simple strategy to modify hydrophobic hexadecyltrimethoxysilan (HDTMS) on ZIF-8@SiO 2 to significantly improve the property of repelling water. We show that various liquids can be stable on its surface and maintain a contact angle higher than 150°. The morphologies and chemical composition were characterized by means of scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FI-IR). In addition, the anticorrosion and antiattrition properties of the film were assessed by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization and HT, respectively. Such a coating shows promising potential as a material for large-scale fabrication.

Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications

PubMed Central

2010-01-01

Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200–1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (JSC) of ~29.5 mA/cm2 without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure. PMID:21124636

Negative charge emission due to excimer laser bombardment of sodium trisilicate glass

NASA Astrophysics Data System (ADS)

Langford, S. C.; Jensen, L. C.; Dickinson, J. T.; Pederson, L. R.

1990-10-01

We describe measurements of negative charge emission accompanying irradiation of sodium trisilicate glass (Na2Oṡ3SiO2) with 248-nm excimer laser light at fluences on the order of 2 J/cm2 per pulse, i.e., at the threshold for ablative etching of the glass surface. The negative charge emission consists of a very prompt photoelectron burst coincident with the laser pulse, followed by a much slower plume of electrons and negative ions traveling with a high density cloud of positive ions, previously identified as primarily Na+. Using combinations of E and B fields in conjunction with time-of-flight methods, the negative ions were successfully separated from the plume and tentatively identified as O-, Si-, NaO-, and perhaps NaSi-. These negative species are probably formed by gas phase collisions in the near-surface region which result in electron attachment.

Highly sensitive surface enhanced Raman scattering substrates based on Ag decorated Si nanocone arrays and their application in trace dimethyl phthalate detection

NASA Astrophysics Data System (ADS)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Cheng, Ying; Wang, Junzhuan; Shi, Yi; Xu, Dongsheng; Xin, Yu

2015-01-01

Wafer-scale three-dimensional (3D) surface enhancement Raman scattering (SERS) substrates were prepared using the plasma etching and ion sputtering methods that are completely compatible with well-established silicon device technologies. The substrates are highly sensitive with excellent uniformity and reproducibility, exhibiting an enhancement factor up to 1012 with a very low relative standard deviation (RSD) around 5%. These are attributed mainly to the uniform-distributed, multiple-type high-density hot spots originating from the structural characteristics of Ag nanoparticles (NPs) decorated Si nanocone (NC) arrays. We demonstrate that the trace dimethyl phthalate (DMP) at a concentration of 10-7 M can be well detected using this SERS substrate, showing that the AgNPs-decorated SiNC arrays can serve as efficient SERS substrates for phthalate acid esters (PAEs) detection with high sensitivity.

Thermal and UV Hydrosilylation of Alcohol-Based Bifunctional Alkynes on Si (111) surfaces: How surface radicals influence surface bond formation.

PubMed

Khung, Y L; Ngalim, S H; Scaccabarozi, A; Narducci, D

2015-06-12

Using two different hydrosilylation methods, low temperature thermal and UV initiation, silicon (111) hydrogenated surfaces were functionalized in presence of an OH-terminated alkyne, a CF3-terminated alkyne and a mixed equimolar ratio of the two alkynes. XPS studies revealed that in the absence of premeditated surface radical through low temperature hydrosilylation, the surface grafting proceeded to form a Si-O-C linkage via nucleophilic reaction through the OH group of the alkyne. This led to a small increase in surface roughness as well as an increase in hydrophobicity and this effect was attributed to the surficial etching of silicon to form nanosize pores (~1-3 nm) by residual water/oxygen as a result of changes to surface polarity from the grafting. Furthermore in the radical-free thermal environment, a mix in equimolar of these two short alkynes can achieve a high contact angle of ~102°, comparable to long alkyl chains grafting reported in literature although surface roughness was relatively mild (rms = ~1 nm). On the other hand, UV initiation on silicon totally reversed the chemical linkages to predominantly Si-C without further compromising the surface roughness, highlighting the importance of surface radicals determining the reactivity of the silicon surface to the selected alkynes.

Self-standing silicon-carbon nanotube/graphene by a scalable in situ approach from low-cost Al-Si alloy powder for lithium ion batteries

NASA Astrophysics Data System (ADS)

Cai, Hongyan; Han, Kai; Jiang, Heng; Wang, Jingwen; Liu, Hui

2017-10-01

Silicon/carbon (Si/C) composite shows great potential to replace graphite as lithium-ion battery (LIB) anode owing to its high theoretical capacity. Exploring low-cost scalable approach for synthesizing Si/C composites with excellent electrochemical performance is critical for practical application of Si/C anodes. In this study, we rationally applied a scalable in situ approach to produce Si-carbon nanotube (Si-CNT) composite via acid etching of commercial inexpensive micro-sized Al-Si alloy powder and CNT mixture. In the Si-CNT composite, ∼10 nm Si particles were uniformly deposited on the CNT surface. After combining with graphene sheets, a flexible self-standing Si-CNT/graphene paper was fabricated with three-dimensional (3D) sandwich-like structure. The in situ presence of CNT during acid-etching process shows remarkable two advantages: providing deposition sites for Si atoms to restrain agglomeration of Si nanoparticles after Al removal from Al-Si alloy powder, increasing the cross-layer conductivity of the paper anode to provide excellent conductive contact sites for each Si nanoparticles. When used as binder-free anode for LIBs without any further treatment, in situ addition of CNT especially plays important role to improve the initial electrochemical activity of Si nanoparticles synthesized from low-cost Al-Si alloy powder, thus resulting in about twice higher capacity than Si/G paper anode. The self-standing Si-CNT/graphene paper anode exhibited a high specific capacity of 1100 mAh g-1 even after 100 cycles at 200 mA g-1 current density with a Coulombic efficiency of >99%. It also showed remarkable rate capability improvement compared to Si/G paper without CNT. The present work demonstrates a low-cost scalable in situ approach from commercial micro-sized Al-Si alloy powder for Si-based composites with specific nanostructure. The Si-CNT/graphene paper is a promising anode candidate with high capacity and cycling stability for LIBs, especially for the flexible batteries application.

Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface.

PubMed

Choi, Ilgyu; Lee, Hyunjoong; Lee, Cheul-Ro; Jeong, Kwang-Un; Kim, Jin Soo

2018-08-03

This paper reports the formation of GaN and InN quantum dots (QDs) with symmetric spherical shapes, grown on SiN/Si(111). Spherical QDs are grown by modulating initial growth behavior via gallium and indium droplets functioning as nucleation sites for QDs. Field-emission scanning electron microscope (FE-SEM) images show that GaN and InN QDs are formed on curved SiN/Si(111) instead of on a flat surface similar to balls on a latex mattress. This is considerably different from the structural properties of In(Ga)As QDs grown on GaAs or InP. In addition, considering the shape of the other III-V semiconductor QDs, the QDs in this study are very close to the ideal shape of zero-dimensional nanostructures. Transmission-electron microscope images show the formation of symmetric GaN and InN QDs with a round shape, agreeing well with the FE-SEM results. Compared to other III-V semiconductor QDs, the unique structural properties of Si-based GaN and InN QDs are strongly related to the modulation in the initial nucleation characteristics due to the presence of droplets, the degree of lattice mismatch between GaN or InN and SiN/Si(111), and the melt-back etching phenomenon.

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation.

PubMed

Zhou, D; Xu, T; Lambert, Y; Cristini-Robbe; Stiévenard, D

2015-12-01

The light absorption of polysilicon planar junctions can be improved using nanostructured top surfaces due to their enhanced light harvesting properties. Nevertheless, associated with the higher surface, the roughness caused by plasma etching and defects located at the grain boundary in polysilicon, the concentration of the recombination centers increases, leading to electrical performance deterioration. In this work, we demonstrate that wet oxidation combined with hydrogen passivation using SiN(x):H are the key technological processes to significantly decrease the surface recombination and improve the electrical properties of nanostructured n(+)-i-p junctions. Nanostructured surface is fabricated by nanosphere lithography in a low-cost and controllable approach. Furthermore, it has been demonstrated that the successive annealing of silicon nitride films has significant effect on the passivation quality, resulting in some improvements on the efficiency of the Si nanostructure-based solar cell device.

Periodically structured Si pillars for high-performing heterojunction photodetectors

NASA Astrophysics Data System (ADS)

Melvin David Kumar, M.; Yun, Ju-Hyung; Kim, Joondong

2015-03-01

A periodical array of silicon (Si) micro pillar structures was fabricated on Si substrates using PR etching process. Indium tin oxide (ITO) layer of 80 nm thickness was deposited over patterned Si substrates so as to make ITO/n-Si heterojunction devices. The influences of width and period of pillars on the optical and electrical properties of prepared devices were investigated. The surface morphology of the Si substrates revealed the uniform array of pillar structures. The 5/10 (width/period) Si pillar pattern reduced the optical reflectance to 6.5% from 17% which is of 5/7 pillar pattern. The current rectifying ratio was found higher for the device in which the pillars are situated in optimum periods. At both visible (600 nm) and near infrared (900 nm) range of wavelengths, the 5/7 and 5/10 pillar patterned device exhibited the better photoresponses which are suitable for making advanced photodetectors. This highly transmittance and photoresponsive pillar patterned Si substrates with an ITO layer would be a promising device for various photoelectric applications.

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

PubMed Central

Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong

2018-01-01

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. PMID:29385759

Enhanced field electron emission from aligned diamond-like carbon nanorod arrays prepared by reactive ion beam etching

NASA Astrophysics Data System (ADS)

Zhao, Yong; Qin, Shi-Qiao; Zhang, Xue-Ao; Chang, Sheng-Li; Li, Hui-Hui; Yuan, Ji-Ren

2016-05-01

Homogeneous diamond-like carbon (DLC) films were deposited on Si supports by a pulsed filtered cathodic vacuum arc deposition system. Using DLC films masked by Ni nanoparticles as precursors, highly aligned diamond-like carbon nanorod (DLCNR) arrays were fabricated by the etching of inductively coupled radio frequency oxygen plasma. The as-prepared DLCNR arrays exhibit excellent field emission properties with a low turn-on field of 2.005 V μm-1 and a threshold field of 4.312 V μm-1, respectively. Raman spectroscopy and x-ray photoelectron spectroscopy were employed to determine the chemical bonding structural change of DLC films before and after etching. It is confirmed that DLC films have good connection with Si supports via the formation of the SiC phase, and larger conductive sp2 domains are formed in the as-etched DLC films, which play essential roles in the enhanced field emission properties for DLCNR arrays.

Metal assisted photochemical etching of 4H silicon carbide

NASA Astrophysics Data System (ADS)

Leitgeb, Markus; Zellner, Christopher; Schneider, Michael; Schwab, Stefan; Hutter, Herbert; Schmid, Ulrich

2017-11-01

Metal assisted photochemical etching (MAPCE) of 4H-silicon carbide (SiC) in Na2S2O8/HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The formation process of the resulting porous layer is studied with respect to etching time, concentration and type of oxidizing agent. From the experiments it is concluded that the porous layer formation is due to electron hole pairs generated in the semiconductor, which stem from UV light irradiation. The generated holes are consumed during the oxidation of 4H-SiC and the formed oxide is dissolved by HF. To maintain charge balance, the oxidizing agent has to take up electrons at the Pt/etching solution interface. Total dissolution of the porous layers is achieved when the oxidizing agent concentration decreases during MAPCE. In combination with standard photolithography, the definition of porous regions is possible. Furthermore chemical micromachining of 4 H-SiC at room temperature is possible.

Effectiveness of silica-lasing method on the bond strength of composite resin repair to Ni-Cr alloy.

PubMed

Madani, Azam S; Astaneh, Pedram Ansari; Nakhaei, Mohammadreza; Bagheri, Hossein G; Moosavi, Horieh; Alavi, Samin; Najjaran, Niloufar Tayarani

2015-04-01

The aim of this study was to evaluate the effectiveness of silica-lasing method for improving the composite resin repair of metal ceramic restorations. Sixty Ni-Cr cylindrical specimens were fabricated. The bonding surface of all specimens was airborne-particle abraded using 50 μm aluminum oxide particles. Specimens were divided into six groups that received the following surface treatments: group 1-airborne-particle abrasion alone (AA); group 2-Nd:YAG laser irradiation (LA); group 3-silica coating (Si-CO); group 4-silica-lasing (metal surface was coated with slurry of opaque porcelain and irradiated by Nd:YAG laser) (Si-LA); group 5-silica-lasing plus etching with HF acid (Si-LA-HF); group 6-CoJet sand lased (CJ-LA). Composite resin was applied on metal surfaces. Specimens were thermocycled and tested in shear mode in a universal testing machine. The shear bond strength values were analyzed using ANOVA and Tukey's tests (α = 0.05). The mode of failure was determined, and two specimens in each group were examined by scanning electron microscopy and wavelength dispersive X-ray spectroscopy. Si-CO showed significantly higher shear bond strength in comparison to other groups (p < 0.001). The shear bond strength values of the LA group were significantly higher than those of the AA group (p < 0.05). No significant difference was found among lased groups (LA, Si-LA, Si-LA-HF, CJ-LA; p > 0.05). The failure mode was 100% adhesive for AA, Si-LA, Si-LA-HF, and CJ-LA. LA and Si-CO groups showed 37.5% and 87.5% cohesive failure, respectively. Silica coating of Ni-Cr alloy resulted in higher shear bond strength than those of other surface treatments. © 2014 by the American College of Prosthodontists.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

NASA Astrophysics Data System (ADS)

Fujishima, Tatsuya; Joglekar, Sameer; Piedra, Daniel; Lee, Hyung-Seok; Zhang, Yuhao; Uedono, Akira; Palacios, Tomás

2013-08-01

A BCl3 surface plasma treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors with a GaN cap layer has been established. This BCl3 plasma treatment was performed by an inductively coupled plasma reactive ion etching system under conditions that prevented any recess etching. The average contact resistances without plasma treatment, with SiCl4, and with BCl3 plasma treatment were 0.34, 0.41, and 0.17 Ω mm, respectively. Also, the standard deviation of the ohmic contact resistance with BCl3 plasma treatment was decreased. This decrease in the standard deviation of contact resistance can be explained by analyzing the surface condition of GaN with x-ray photoelectron spectroscopy and positron annihilation spectroscopy. We found that the proposed BCl3 plasma treatment technique can not only remove surface oxide but also introduce surface donor states that contribute to lower the ohmic contact resistance.

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

PubMed Central

2011-01-01

Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature. PMID:21892938

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vazehrad, S., E-mail: vazehrad@kth.se; Elfsberg, J., E-mail: jessica.elfsberg@scania.com; Diószegi, A., E-mail: attila.dioszegi@jth.hj.se

An investigation on silicon segregation of lamellar, compacted and nodular graphite iron was carried out by applying a selective, immersion color etching and a modified electron microprobe to study the microstructure. The color etched micrographs of the investigated cast irons by revealing the austenite phase have provided data about the chronology and mechanism of microstructure formation. Moreover, electron microprobe has provided two dimensional segregation maps of silicon. A good agreement was found between the segregation profile of silicon in the color etched microstructure and the silicon maps achieved by electron microprobe analysis. However, quantitative silicon investigation was found to bemore » more accurate than color etching results to study the size of the eutectic colonies. - Highlights: • Sensitivity of a color etchant to silicon segregation is quantitatively demonstrated. • Si segregation measurement by EMPA approved the results achieved by color etching. • Color etched micrographs provided data about solidification mechanism in cast irons. • Austenite grain boundaries were identified by measuring the local Si concentration.« less

Coralloid-like Nanostructured c-nSi/SiOx@Cy Anodes for High Performance Lithium Ion Battery.

PubMed

Zhuang, Xianhuan; Song, Pingan; Chen, Guorong; Shi, Liyi; Wu, Yuan; Tao, Xinyong; Liu, Hongjiang; Zhang, Dengsong

2017-08-30

Balancing the size of the primary Si unit and void space is considered to be an effective approach for developing high performance silicon-based anode materials and is vital to create a lithium ion battery with high energy density. We herein have demonstrated the facile fabrication of coralloid-like nanostructured silicon composites (c-nSi/SiO x @Cy) via sulfuric acid etching the Al 60 Si 40 alloy, followed by a surface growth carbon layer approach. The HRTEM images of pristine and cycled c-nSi/SiO x @Cy show that abundant nanoscale internal pores and the continuous conductive carbon layer effectively avoid the pulverization and agglomeration of Si units during multiple cycles. It is interesting that the c-nSi/SiO x @C 4.0 anode exhibits a high initial Coulombic efficiency of 85.53%, and typical specific capacity of over 850 mAh g -1 after deep 500 cycles at a current density of 1 A g -1 . This work offers a facile strategy to create silicon-based anodes consisting of highly dispersed primary nano-Si units.

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN.

PubMed

Jang, Dongsoo; Jue, Miyeon; Kim, Donghoi; Kim, Hwa Seob; Lee, Hyunkyu; Kim, Chinkyo

2018-03-07

On an SiO 2 -patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H 3 PO 4 , this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO 2 -patterned sapphire.

Broadband antireflective silicon nanostructures produced by spin-coated Ag nanoparticles

PubMed Central

2014-01-01

We report the fabrication of broadband antireflective silicon (Si) nanostructures fabricated using spin-coated silver (Ag) nanoparticles as an etch mask followed by inductively coupled plasma (ICP) etching process. This fabrication technique is a simple, fast, cost-effective, and high-throughput method, making it highly suitable for mass production. Prior to the fabrication of Si nanostructures, theoretical investigations were carried out using a rigorous coupled-wave analysis method in order to determine the effects of variations in the geometrical features of Si nanostructures to obtain antireflection over a broad wavelength range. The Ag ink ratio and ICP etching conditions, which can affect the distribution, distance between the adjacent nanostructures, and height of the resulting Si nanostructures, were carefully adjusted to determine the optimal experimental conditions for obtaining desirable Si nanostructures for practical applications. The Si nanostructures fabricated using the optimal experimental conditions showed a very low average reflectance of 8.3%, which is much lower than that of bulk Si (36.8%), as well as a very low reflectance for a wide range of incident angles and different polarizations over a broad wavelength range of 300 to 1,100 nm. These results indicate that the fabrication technique is highly beneficial to produce antireflective structures for Si-based device applications requiring low light reflection. PMID:24484636

Bone cell-materials interaction on Si microchannels with bioinert coatings.

PubMed

Condie, Russell; Bose, Susmita; Bandyopadhyay, Amit

2007-07-01

Bone implant life is dependent upon integration of biomaterial surfaces with local osteoblasts. This investigation studied the effects of various microchannel parameters and surface chemistry on immortalized osteoblast precursor cell (OPC1) adhesion. Cell-materials interactions were observed within channels of varying length, width, tortuosity, convergence, divergence and chemistry. Si wafers were used to create four distinct 1cm(2) designs of varying channel dimensions. After anisotropic chemical etching to a depth of 120microm, wafers were sputter coated with gold and titanium; and on another surface SiO(2) was grown to vary the surface chemistry of these microchannels. OPC1 cells were seeded in the central cavity of each chip before incubation in tissue culture plates. On days 5, 11 and 16, samples were taken out, fixed and processed for microscopic analysis. Samples were visually characterized, qualitatively scored and analyzed. Channel walls did not contain OPC1 migration, but showed locally interrupted adhesion. Scores for channels of floor widths as narrow as 350microm were significantly reduced. No statistically significant preference was detected for gold, titanium or SiO(2) surfaces. Bands of OPC1 cells appeared to align with nearby channels, suggesting that cell morphology may be controlled by topography of the design to improve osseointegration.

Fabrication of the replica templated from butterfly wing scales with complex light trapping structures

NASA Astrophysics Data System (ADS)

Han, Zhiwu; Li, Bo; Mu, Zhengzhi; Yang, Meng; Niu, Shichao; Zhang, Junqiu; Ren, Luquan

2015-11-01

The polydimethylsiloxane (PDMS) positive replica templated twice from the excellent light trapping surface of butterfly Trogonoptera brookiana wing scales was fabricated by a simple and promising route. The exact SiO2 negative replica was fabricated by using a synthesis method combining a sol-gel process and subsequent selective etching. Afterwards, a vacuum-aided process was introduced to make PDMS gel fill into the SiO2 negative replica, and the PDMS gel was solidified in an oven. Then, the SiO2 negative replica was used as secondary template and the structures in its surface was transcribed onto the surface of PDMS. At last, the PDMS positive replica was obtained. After comparing the PDMS positive replica and the original bio-template in terms of morphology, dimensions and reflectance spectra and so on, it is evident that the excellent light trapping structures of butterfly wing scales were inherited by the PDMS positive replica faithfully. This bio-inspired route could facilitate the preparation of complex light trapping nanostructure surfaces without any assistance from other power-wasting and expensive nanofabrication technologies.

An optimized one-step wet etching process of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical system applications

NASA Astrophysics Data System (ADS)

Che, L.; Halvorsen, E.; Chen, X.

2011-10-01

The existence of insoluble residues as intermediate products produced during the wet etching process is the main quality-reducing and structure-patterning issue for lead zirconate titanate (PZT) thin films. A one-step wet etching process using the solutions of buffered HF (BHF) and HNO3 acid was developed for patterning PZT thin films for microelectomechanical system (MEMS) applications. PZT thin films with 1 µm thickness were prepared on the Pt/Ti/SiO2/Si substrate by the sol-gel process for compatibility with Si micromachining. Various compositions of the etchant were investigated and the patterns were examined to optimize the etching process. The optimal result is demonstrated by a high etch rate (3.3 µm min-1) and low undercutting (1.1: 1). The patterned PZT thin film exhibits a remnant polarization of 24 µC cm-2, a coercive field of 53 kV cm-1, a leakage current density of 4.7 × 10-8 A cm-2 at 320 kV cm-1 and a dielectric constant of 1100 at 1 KHz.

Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

NASA Astrophysics Data System (ADS)

Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

2014-11-01

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

Highly controllable ICP etching of GaAs based materials for grating fabrication

NASA Astrophysics Data System (ADS)

Weibin, Qiu; Jiaxian, Wang

2012-02-01

Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 D 10 W, RF2 D 20 W and a high ratio of Ar to SiCl4 flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.

Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array.

PubMed

Kong, Lingyu; Zhao, Yunshan; Dasgupta, Binayak; Ren, Yi; Hippalgaonkar, Kedar; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang

2017-06-21

The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

Realization of Quasi‐Omnidirectional Solar Cells with Superior Electrical Performance by All‐Solution‐Processed Si Nanopyramids

PubMed Central

Zhong, Sihua; Wang, Wenjie; Tan, Miao; Zhuang, Yufeng

2017-01-01

Abstract Large‐scale (156 mm × 156 mm) quasi‐omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (θ), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal‐assisted alkaline etching method, which is an all‐solution‐processed method and highly simple together with cost‐effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)‐textured solar cells, the SiNPs‐textured solar cells possess lower carrier recombination and thus superior electrical performances, showing notable distinctions from other Si nanostructures‐textured solar cells. Furthermore, SiNPs‐textured solar cells have very little drop of quantum efficiency with increasing θ, demonstrating the quasi‐omnidirectional characteristic. As an overall result, both the SiNPs‐textured homojunction and heterojunction solar cells possess higher daily electric energy production with a maximum relative enhancement approaching 2.5%, when compared to their SiMPs‐textured counterparts. The quasi‐omnidirectional solar cell opens a new opportunity for photovoltaics to produce more electric energy with a low cost. PMID:29201616

Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

PubMed

Zhong, Sihua; Wang, Wenjie; Tan, Miao; Zhuang, Yufeng; Shen, Wenzhong

2017-11-01

Large-scale (156 mm × 156 mm) quasi-omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (θ), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal-assisted alkaline etching method, which is an all-solution-processed method and highly simple together with cost-effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)-textured solar cells, the SiNPs-textured solar cells possess lower carrier recombination and thus superior electrical performances, showing notable distinctions from other Si nanostructures-textured solar cells. Furthermore, SiNPs-textured solar cells have very little drop of quantum efficiency with increasing θ, demonstrating the quasi-omnidirectional characteristic. As an overall result, both the SiNPs-textured homojunction and heterojunction solar cells possess higher daily electric energy production with a maximum relative enhancement approaching 2.5%, when compared to their SiMPs-textured counterparts. The quasi-omnidirectional solar cell opens a new opportunity for photovoltaics to produce more electric energy with a low cost.

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

NASA Astrophysics Data System (ADS)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

The first neural probe integrated with light source (blue laser diode) for optical stimulation and electrical recording.

PubMed

Park, HyungDal; Shin, Hyun-Joon; Cho, Il-Joo; Yoon, Eui-sung; Suh, Jun-Kyo Francis; Im, Maesoon; Yoon, Euisik; Kim, Yong-Jun; Kim, Jinseok

2011-01-01

In this paper, we report a neural probe which can selectively stimulate target neurons optically through Si wet etched mirror surface and record extracellular neural signals in iridium oxide tetrodes. Consequently, the proposed approach provides to improve directional problem and achieve at least 150/m gap distance between stimulation and recording sites by wet etched mirror surface in V-groove. Also, we developed light source, blue laser diode (OSRAM Blue Laser Diode_PL 450), integration through simple jig for one-touch butt-coupling. Furthermore, optical power and impedance of iridium oxide tetrodes were measured as 200 μW on 5 mW from LD and 206.5 k Ω at 1 kHz and we demonstrated insertion test of probe in 0.5% agarose-gel successfully. We have successfully transmitted a light of 450 nm to optical fiber through the integrated LD using by butt-coupling method.

Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

PubMed

Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

2015-12-09

The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

Chemical structure of interfaces

NASA Technical Reports Server (NTRS)

Grunthaner, F. J.

1985-01-01

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Dislocation-free strained silicon-on-silicon by in-place bonding

NASA Astrophysics Data System (ADS)

Cohen, G. M.; Mooney, P. M.; Paruchuri, V. K.; Hovel, H. J.

2005-06-01

In-place bonding is a technique where silicon-on-insulator (SOI) slabs are bonded by hydrophobic attraction to the underlying silicon substrate when the buried oxide is undercut in dilute HF. The bonding between the exposed surfaces of the SOI slab and the substrate propagates simultaneously with the buried oxide etching. As a result, the slabs maintain their registration and are referred to as "bonded in-place". We report the fabrication of dislocation-free strained silicon slabs from pseudomorphic trilayer Si/SiGe/SOI by in-place bonding. Removal of the buried oxide allows the compressively strained SiGe film to relax elastically and induce tensile strain in the top and bottom silicon films. The slabs remain bonded to the substrate by van der Waals forces when the wafer is dried. Subsequent annealing forms a covalent bond such that when the upper Si and the SiGe layer are removed, the bonded silicon slab remains strained.

Ag-NP@Ge-nanotaper/Si-micropillar ordered arrays as ultrasensitive and uniform surface enhanced Raman scattering substrates.

PubMed

Liu, Jing; Meng, Guowen; Li, Zhongbo; Huang, Zhulin; Li, Xiangdong

2015-11-21

Surface-enhanced Raman scattering (SERS) is considered to be an excellent candidate for analytical detection schemes, because of its molecular specificity, rapid response and high sensitivity. Here, SERS-substrates of Ag-nanoparticle (Ag-NP) decorated Ge-nanotapers grafted on hexagonally ordered Si-micropillar (denoted as Ag-NP@Ge-nanotaper/Si-micropillar) arrays are fabricated via a combinatorial process of two-step etching to achieve hexagonal Si-micropillar arrays, chemical vapor deposition of flocky Ge-nanotapers on each Si-micropillar and decoration of Ag-NPs onto the Ge-nanotapers through galvanic displacement. With high density three-dimensional (3D) "hot spots" created from the large quantities of the neighboring Ag-NPs and large-scale uniform morphology, the hierarchical Ag-NP@Ge-nanotaper/Si-micropillar arrays exhibit strong and reproducible SERS activity. Using our hierarchical 3D SERS-substrates, both methyl parathion (a commonly used pesticide) and PCB-2 (one congener of highly toxic polychlorinated biphenyls) with concentrations down to 10(-7) M and 10(-5) M have been detected respectively, showing great potential in SERS-based rapid trace-level detection of toxic organic pollutants in the environment.

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl; Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP; Peuter, K. de

2015-07-06

The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takesmore » place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.« less

Enhanced photo-response of porous silicon photo-detectors by embeddingTitanium-dioxide nano-particles

NASA Astrophysics Data System (ADS)

Ali, Hiba M.; Makki, Sameer A.; Abd, Ahmed N.

2018-05-01

Porous silicon (n-PS) films can be prepared by photoelectochemical etching (PECE) Silicon chips n - types with 15 (mA / cm2), in 15 minutes etching time on the fabrication nano-sized pore arrangement. By using X-ray diffraction measurement and atomic power microscopy characteristics (AFM), PS was investigated. It was also evaluated the crystallites size from (XRD) for the PS nanoscale. The atomic force microscopy confirmed the nano-metric size chemical fictionalization through the electrochemical etching that was shown on the PS surface chemical composition. The atomic power microscopy checks showed the roughness of the silicon surface. It is also notified (TiO2) preparation nano-particles that were prepared by pulse laser eradication in ethanol (PLAL) technique through irradiation with a Nd:YAG laser pulses TiO2 target that is sunk in methanol using 400 mJ of laser energy. It has been studied the structural, optical and morphological of TiO2NPs. It has been detected that through XRD measurement, (TiO2) NPs have been Tetragonal crystal structure. While with AFM measurements, it has been realized that the synthesized TiO2 particles are spherical with an average particle size in the (82 nm) range. It has been determined that the energy band gap of TiO2 NPs from optical properties and set to be in (5eV) range.The transmittance and reflectance spectra have determined the TiO2 NPs optical constants. It was reported the effectiveness of TiO2 NPs expansion on the PS Photodetector properties which exposes the benefits in (Al/PS/Si/Al). The built-in tension values depend on the etching time current density and laser flounce. Al/TiO2/PS/Si/Al photo-detector heterojunction have two response peaks that are situated at 350 nm and (700 -800nm) with max sensitivity ≈ 0.7 A/W. The maximum given detectivity is 9.38at ≈ 780 nm wavelength.

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

2014-09-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

Comparative structural and electronic studies of hydrogen interaction with isolated versus ordered silicon nanoribbons grown on Ag(110)

NASA Astrophysics Data System (ADS)

Dávila, M. E.; Marele, A.; De Padova, P.; Montero, I.; Hennies, F.; Pietzsch, A.; Shariati, M. N.; Gómez-Rodríguez, J. M.; Le Lay, G.

2012-09-01

We have investigated the geometry and electronic structure of two different types of self-aligned silicon nanoribbons (SiNRs), forming either isolated SiNRs or a self-assembled 5 × 2/5 × 4 grating on an Ag(110) substrate, by scanning tunnelling microscopy and high resolution x-ray photoelectron spectroscopy. At room temperature we further adsorb on these SiNRs either atomic or molecular hydrogen. The hydrogen absorption process and hydrogenation mechanism are similar for isolated or 5 × 2/5 × 4 ordered SiNRs and are not site selective; the main difference arises from the fact that the isolated SiNRs are more easily attacked and destroyed faster. In fact, atomic hydrogen strongly interacts with any Si atoms, modifying their structural and electronic properties, while molecular hydrogen has first to dissociate. Hydrogen finally etches the Si nanoribbons and their complete removal from the Ag(110) surface could eventually be expected.

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

NASA Technical Reports Server (NTRS)

Ksendzov, A.; Fathauer, R. W.; George, T.; Pike, W. T.; Vasquez, R. P.; Taylor, A. P.

1993-01-01

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

2018-04-01

Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

[Effect of SiO₂-ZrO₂slurry coating on surface performance of zirconia ceramic].

PubMed

Du, Qiao; Niu, Guangliang; Lin, Hong; Jiang, Ruodan

2015-11-01

To evaluate the effect of SiO₂-ZrO₂slurry coating on surface performance of zirconia ceramic. Seventy pre-sintered zirconia discs were randomly divided into seven groups with 10 discs per group. Sample discs in each group received one of the following seven different surface treatments, namely, sintered (group AS), sand blasting after sintered (group SB), coated with slurry of mole ratio of SiO₂to ZrO₂2:1 (group 2SiO₂-1ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:1 (group 1SiO₂-1ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:2 (group 1SiO₂-2ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:3 (group 1SiO₂-3ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:4 (group 1SiO₂-4ZrO₂). Profilometer, X-ray diffractometer (XRD), energy dispersive spectrometer, scanning electron microscopy (SEM) were used to analyze surface performance. The surface roughness of the discs in group AS was lower than those in the other groups [(0.33 ± 0.03) µm] (P < 0.05), there was no statistically significant difference (P > 0.05) among group 2SiO₂-1ZrO₂[(3.85 ± 0.38) µm], group 1SiO₂-1ZrO₂[(3.78 ± 0.56) µm] and group 1SiO₂-2ZrO₂[(4.06 ± 0.48) µm], and no difference (P > 0.05) was observed between group 1SiO₂-3ZrO₂[(1.02 ± 0.09) µm] and group 1SiO₂-4ZrO₂[(1.53 ± 0.23) µm] either. However, surface roughness in all coating groups was higher than those in group SB [(0.86 ± 0.05) µm] (P < 0.05). According to the XRD pattern, group AS and all coating groups consisted of 100% tetragonal airconia and monoclinic zirconia was detected at surface of group SB. Contents of surface silicon of coating groups increased significantly, however, no silicon was detected at sample surface of group AS and group SB. SEM showed that zirconia grains of coating exposed since part of silicon was etched by hydrofluoric acid, a three-dimensional network of intergrain nano-spaces was created. SiO₂-ZrO₂slurry coating could make surface of zirconia rough and increase Si content without creating monoclinic zirconia.

Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate.

PubMed

Men, Dandan; Wu, Yingyi; Wang, Chu; Xiang, Junhuai; Yang, Ganlan; Wan, Changjun; Zhang, Honghua

2018-02-04

Two-dimensional (2D) periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO₂ nanopillar arrays decorated with Ag nanoparticles (NPs) with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE), depositing Ag layer and annealing. For the prepared SiO₂ nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO₂ nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP) and rhodamine 6G (R6G) due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO₂ nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density "hotspots" derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.

Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

PubMed

Nafie, Nesma; Lachiheb, Manel Abouda; Bouaicha, Mongi

2012-07-16

Owing to their interesting electronic, mechanical, optical, and transport properties, silicon nanowires (SiNWs) have attracted much attention, giving opportunities to several potential applications in nanoscale electronic, optoelectronic devices, and silicon solar cells. For photovoltaic application, a superficial film of SiNWs could be used as an efficient antireflection coating. In this work we investigate the morphological, optical, and electronic properties of SiNWs fabricated at different etching times. Characterizations of the formed SiNWs films were performed using a scanning electron microscope, ultraviolet-visible-near-infrared spectroscopy, and light-beam-induced-current technique. The latter technique was used to determine the effective diffusion length in SiNWs films. From these investigations, we deduce that the homogeneity of the SiNWs film plays a key role on the electronic properties.

Chemical method for producing smooth surfaces on silicon wafers

DOEpatents

Yu, Conrad

2003-01-01

An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Kun; Wang, Dan; Yang, Ping

Graphical abstract: Anatase TiO{sub 2} nanocaps prepared by HF-assisted chemical etching method exhibit enhanced photocatalytic activity compared with commercial P25 because of HF served as an etching agent to remove doped impurities. - Highlights: • Anatase TiO{sub 2} nanocaps were synthesized by HF etching process. • The optimal conditions of experiment are 700 °C calcination and 0.2 mL HF solution. • The photocatalytic properties was studied upon UV and Visible irradiation. • The unique TiO{sub 2} nanocaps structure shows excellent photocatalytic activity. - Abstract: Anatase titanium dioxide (TiO{sub 2}) nanocaps were created via a four-step process including the preparation ofmore » SiO{sub 2} spheres, the deposition of a TiO{sub 2} layer to fabricate SiO{sub 2}@TiO{sub 2} composite spheres, the calcination for obtaining the crystal structure of anatase phase, and hydrofluoric acid (HF) etching to dissolve SiO{sub 2} cores. The SiO{sub 2}@TiO{sub 2} spheres calcined at 700 °C revealed fine photocatalytic activity. Interestingly, most of samples transformed into TiO{sub 2} nanocaps via HF etching, and TiO{sub 2} nanocaps prepared using optimal conditions exhibited quick degradation (k is 0.052 min{sup −1}) compared with commercial P25 (k is 0.030 min{sup −1}) and the TiO{sub 2} nanostructures etched by a NaOH solution. The excellent photocatalytic performance is attributed to its unique hollow hemispherical nanocaps structure, which is in favor of making full use of incident light. The photocatalysis phenomenon in visible light was also observed after depositing Au nanoparticles on anantase TiO{sub 2} nanocaps.« less

Fabrication of reproducible, integration-compatible hybrid molecular/si electronics.

PubMed

Yu, Xi; Lovrinčić, Robert; Kraynis, Olga; Man, Gabriel; Ely, Tal; Zohar, Arava; Toledano, Tal; Cahen, David; Vilan, Ayelet

2014-12-29

Reproducible molecular junctions can be integrated within standard CMOS technology. Metal-molecule-semiconductor junctions are fabricated by direct Si-C binding of hexadecane or methyl-styrene onto oxide-free H-Si(111) surfaces, with the lateral size of the junctions defined by an etched SiO2 well and with evaporated Pb as the top contact. The current density, J, is highly reproducible with a standard deviation in log(J) of 0.2 over a junction diameter change from 3 to 100 μm. Reproducibility over such a large range indicates that transport is truly across the molecules and does not result from artifacts like edge effects or defects in the molecular monolayer. Device fabrication is tested for two n-Si doping levels. With highly doped Si, transport is dominated by tunneling and reveals sharp conductance onsets at room temperature. Using the temperature dependence of current across medium-doped n-Si, the molecular tunneling barrier can be separated from the Si-Schottky one, which is a 0.47 eV, in agreement with the molecular-modified surface dipole and quite different from the bare Si-H junction. This indicates that Pb evaporation does not cause significant chemical changes to the molecules. The ability to manufacture reliable devices constitutes important progress toward possible future hybrid Si-based molecular electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-decorated Au nanoparticles on antireflective Si pyramids with improved hydrophobicity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saini, C. P.; Barman, A.; Kanjilal, A., E-mail: aloke.kanjilal@snu.edu.in

2016-04-07

Post-deposition annealing mediated evolution of self-decorated Au nanoparticles (NPs) on chemically etched Si pyramids is presented. A distinct transformation of Si surfaces from hydrophilic to hydrophobic is initially found after chemical texturing, showing an increase in contact angle (CA) from 58° to 98° (±1°). Further improvement of hydrophobicity with CA up to ∼118° has been established after annealing a 10 nm thick Au-coated Si pyramids at 400 °C that led to the formation of Au NPs on Si facets along with self-ordering at the pyramid edges. Detailed x-ray diffraction studies suggest the evolution of crystalline Au NPs on strained Si facets. Microstructuralmore » studies, however, indicate no mixing of Au and Si atoms at the Au/Si interfaces, instead of forming Au nanocrystals at 400 °C. The improved hydrophobicity of Si pyramids, even with Au NPs can be explained in the light of a decrease in solid fractional surface area according to Wenzel's model. Moreover, a sharp drop in specular reflectance from Si pyramids in the range of 300–800 nm, especially in the ultraviolet region up to ∼0.4% is recorded in the presence of Au NPs by ultraviolet-visible spectroscopy, reflecting the possible use in photovoltaic devices with improved antireflection property.« less

a-Si:H/SiNW shell/core for SiNW solar cell applications

PubMed Central

2013-01-01

Vertically aligned silicon nanowires have been synthesized by the chemical etching of silicon wafers. The influence of a hydrogenated amorphous silicon (a-Si:H) layer (shell) on top of a silicon nanowire (SiNW) solar cell has been investigated. The optical properties of a-Si:H/SiNWs and SiNWs are examined in terms of optical reflection and absorption properties. In the presence of the a-Si:H shell, 5.2% reflection ratio in the spectral range (250 to 1,000 nm) is achieved with a superior absorption property with an average over 87% of the incident light. In addition, the characteristics of the solar cell have been significantly improved, which exhibits higher open-circuit voltage, short-circuit current, and efficiency by more than 15%, 12%, and 37%, respectively, compared with planar SiNW solar cells. Based on the current–voltage measurements and morphology results, we show that the a-Si:H shell can passivate the defects generated by wet etching processes. PMID:24195734

Evaluation of effect of laser etching on shear bond strength between maxillofacial silicone and acrylic resin subjected to accelerated aging process.

PubMed

Rhea, Antonette; Ahila, S C; Kumar, B Muthu

2017-01-01

Maxillofacial prosthesis are supported by implants, require a retentive matrix to retain the suprastructure. The retentive matrix is made up of acrylic resin to which the silicone prostheses are anchored by micro-mechanical bond. The delamination of silicone away from the retentive matrix is a persisting problem in implant-supported maxillofacial prosthesis. This study aimed to evaluate the effect of laser etching on the shear bond strength (BS) between acrylic resin and maxillofacial silicone, after 24 h of fabrication and after 200 h of accelerated aging. The samples were prepared according to ISO/TR 11405:1994 in maxillofacial silicone and polymethyl methacrylate resin. The untreated samples were Group A (control), Group B (silicon carbide [SiC] paper abrasion 80 grit size), and Group C (erbium-doped yttrium aluminum garnet laser etching). Then, the samples were coated with primer and bonded to maxillofacial silicone. The samples were subjected to shear BS test in an universal testing machine after 24 h of fabrication and after 200 h of accelerated aging. The results were statistically analyzed using one-way ANOVA and Tukey's HSD post hoc test. The shear BS test after 24 h of fabrication showed better BS in SiC paper abrasion. The shear BS test after 200 h of accelerated aging showed better BS in laser etching compared to SiC abrasion. Laser etching produced better shear BS compared to conventional SiC paper abrasion after 200 h of accelerated aging process.

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

NASA Astrophysics Data System (ADS)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

Physics and Chemistry on Well-Defined Semiconductor and Oxide Surfaces

NASA Astrophysics Data System (ADS)

Chen, Peijun

High resolution electron energy loss spectroscopy (HREELS) and other surface spectroscopic techniques have been employed to investigate the following two classes of surface/interface phenomena on well-defined semiconductor and oxide surfaces: (i) the fundamental physical and chemical processes involved in gas-solid interaction on silicon single crystal surfaces, and (ii) the physical and chemical properties of metal-oxide interfaces. The particular systems reported in this dissertation are: NH_3, PH_3 and B_ {10}H_{14} on Si(111)-(7 x 7); NH_3 on Si(100) -(2 x 1); atomic H on Si(111)-(7 x 7) and boron-modified Si(111); Al on Al_2O_3 and Sn on SiO_2.. On silicon surfaces, the surface dangling bonds function as the primary adsorption sites where surface chemical processes take place. The unambiguous identification of surface species by vibrational spectroscopy allows the elementary steps involved in these surface chemical processes to be followed on a molecular level. For adsorbate molecules such as NH_3 and PH_3, the nature of the initial low temperature (100 -300 K) adsorption is found to be dissociative, while that for B_{10}H_ {14} is non-dissociative. This has been deduced based upon the presence (or absence) of specific characteristic vibrational mode(s) on surface. By following the evolution of surface species as a function of temperature, the elementary steps leading to silicon nitride thin film growth and doping of silicon are elucidated. In the case of NH_3 on Si(111)-(7 x 7) and Si(100)-(2 x 1), a detailed understanding on the role of substrate surface structure in controlling the surface reactivity has been gained on the basis of a Si adatom backbond-strain relief mechanism on the Si(111) -(7 x 7). The electronic modification to Si(111) surface by subsurface boron doping has been shown to quench its surface chemistry, even for the most aggressive atomic H. This discovery is potentially meaningful to the technology of gas-phase silicon etching. The electron energy loss studies on the excitation of surface plasmon in heavily B-doped Si(111) and the investigation of surface optical phonon modes in aluminum oxide thin films provide insights into the sensitive dependence of the physical properties of a solid upon its chemical modification. Successful interpretations of these elementary excitation features are built upon the understanding of the fundamental physics of low-energy electron-solid interaction. Finally, the temperature behavior of the interfacial properties of Sn/SiO_2 are explored.

Evaluation of ASR potential of quartz-rich rocks by alkaline etching of polished rock sections

NASA Astrophysics Data System (ADS)

Šachlová, Šárka; Kuchařová, Aneta; Pertold, Zdeněk; Přikryl, Richard

2015-04-01

Damaging effect of alkali-silica reaction (ASR) on concrete structures has been observed in various countries all over the World. Civil engineers and real state owners are demanding reliable methods in the assessment of ASR potential of aggregates before they are used in constructions. Time feasible methods are expected, as well as methods which enable prediction of long-term behaviour of aggregates in concrete. The most frequently employed accelerated mortar bar test (AMBT) quantifies ASR potential of aggregates according to the expansion values of mortar bars measured after fourteen days testing period. Current study aimed to develop a new methodical approach facilitating identification and quantification of ASR potential of aggregates. Polished rock sections of quartz and amorphous SiO2 (coming from orthoquartzite, quartz meta-greywacke, pegmatite, phyllite, chert, and flint) were subjected to experimental leaching in 1M NaOH solution at 80°C. After 14 days of alkaline etching, the rock sections were analyzed employing scanning electron microscope combined with energy dispersive spectrometer. Representative areas were documented in back scattered electron (BSE) images and measured using fully-automatic petrographic image analysis (PIA). Several features connected to alkaline etching were observed on the surface of polished rock sections: deep alkaline etching, partial leach-out of quartz and amorphous particles, alkaline etching connected to quartz grain boundaries, and alkaline etching without any connection to grain boundaries. All features mentioned above had significant influence on grey-scale spectrum of BSE images. A specific part of the grey-scale spectrum (i.e. grey-shade 0-70) was characteristic of areas affected by alkaline etching (ASR area). By measuring such areas we quantified the extent of alkaline etching in studied samples. Very good correlation was found between the ASR area and ASR potential of investigated rocks measured according to the standard AMBT (folowing ASTM C1260). The etching experiment is regarded to be feasible method to quantify ASR potential of quartz- (resp. SiO2-) rich rocks. Employement of the method: (1) decreases potential error from less experienced operator; (2) minimizes the volume of the rock need to be analyzed; (3) enables to visualize microscopic features where ASR originates; and (4) enables to identify alkali-reactive components in the rocks. The main disadvatage of the method is regarded in the restriction to quartz- (resp. SiO2-) rich rocks. If other minerals are included in the rocks their role in ASR should be considered. These minerals can be excluded from the analysis in case they are not reactive and if their content is very low (e.g. accesory minerals). If the minerals contribute to ASR (e.g. albite, micas), these mineral phases should be included in the analysis. Then the application of PIA needs to be modified in respect to different grey shades of individual minerals.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Low-Power RIE of SiO2 in CHF3 To Obtain Steep Sidewalls

NASA Technical Reports Server (NTRS)

Turner, Tasha; Wu, Chi

2003-01-01

A reactive-ion etching (RIE) process has been developed to enable the formation of holes with steep sidewalls in a layer of silicon dioxide that covers a silicon substrate. The holes in question are through the thickness of the SiO2 and are used to define silicon substrate areas to be etched or to be built upon through epitaxial deposition of silicon. The sidewalls of these holes are required to be vertical in order to ensure that the sidewalls of the holes to be etched in the substrate or the sidewalls of the epitaxial deposits, respectively, also turn out to be vertical.

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

n-Type silicon photoelectrochemistry in methanol: Design of a 10.1% efficient semiconductor/liquid junction solar cell

PubMed Central

Gronet, Chris M.; Lewis, Nathan S.; Cogan, George; Gibbons, James

1983-01-01

n-Type Si electrodes in MeOH solvent with 0.2 M (1-hydroxyethyl)ferrocene, 0.5 mM (1-hydroxyethyl)ferricenium, and 1.0 M LiClO4 exhibit air mass 2 conversion efficiencies of 10.1% for optical energy into electricity. We observe open-circuit voltages of 0.53 V and short-circuit quantum efficiencies for electron flow of nearly unity. The fill factor of the cell does not decline significantly with increases in light intensity, indicating substantial reduction in efficiency losses in MeOH solvent compared to previous nonaqueous n-Si systems. Matte etch texturing of the Si surface decreases surface reflectivity and increases photocurrent by 50% compared to shiny, polished Si samples. The high values of the open-circuit voltage observed are consistent with the presence of a thin oxide layer, as in a Schottky metal-insulator-semiconductor device, which yields decreased surface recombination and increased values of open-circuit voltage and short-circuit current. The n-Si system was shown to provide sustained photocurrent at air mass 2 levels (20 mA/cm2) for charge through the interface of >2,000 C/cm2. The n-Si/MeOH system represents a liquid junction cell that has exceeded the 10% barrier for conversion of optical energy into electricity. PMID:16593280

Synthesis and characterization of porous silicon gas sensors

NASA Astrophysics Data System (ADS)

abbas, Roaa A.; Alwan, Alwan M.; Abdulhamied, Zainab T.

2018-05-01

In this work, photo-electrochemical etching process of n-type Silicon of resistivity(10 Ω.cm) and (100) orientation, using two illumination sources IR and violet wavelength in HF acid have been used to produce PSi gas detection device. The fabrication process was carried out at a fixed etching current density of 25mA/cm2 and at different etching time (5, 10, 15 and 20) min and (8, 16, 24, and 30) min. Two configurations of gas sensor configuration planer and sandwich have been made and investigated. The morphological properties have been studied using SEM,the FTIR measurement show that the (Si-Hx) and (Si-O-Si) absorption peak were increases with increasing etching time,and Photoluminescence properties of PSi layer show decrease in the peak of PL peak toward the violet shift. The gas detection process is made on the CO2 gas at different operating temperature and fixed gas concentration. In the planner structure, the gas sensing was measured through, the change in the resistance readout as a function to the exposure time, while for sandwich structure J-V characteristic have been made to determine the sensitivity.

Thermal and UV Hydrosilylation of Alcohol-Based Bifunctional Alkynes on Si (111) surfaces: How surface radicals influence surface bond formation

PubMed Central

Khung, Y. L.; Ngalim, S. H.; Scaccabarozi, A.; Narducci, D.

2015-01-01

Using two different hydrosilylation methods, low temperature thermal and UV initiation, silicon (111) hydrogenated surfaces were functionalized in presence of an OH-terminated alkyne, a CF3-terminated alkyne and a mixed equimolar ratio of the two alkynes. XPS studies revealed that in the absence of premeditated surface radical through low temperature hydrosilylation, the surface grafting proceeded to form a Si-O-C linkage via nucleophilic reaction through the OH group of the alkyne. This led to a small increase in surface roughness as well as an increase in hydrophobicity and this effect was attributed to the surficial etching of silicon to form nanosize pores (~1–3 nm) by residual water/oxygen as a result of changes to surface polarity from the grafting. Furthermore in the radical-free thermal environment, a mix in equimolar of these two short alkynes can achieve a high contact angle of ~102°, comparable to long alkyl chains grafting reported in literature although surface roughness was relatively mild (rms = ~1 nm). On the other hand, UV initiation on silicon totally reversed the chemical linkages to predominantly Si-C without further compromising the surface roughness, highlighting the importance of surface radicals determining the reactivity of the silicon surface to the selected alkynes. PMID:26067470

Enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by coupling to Au-nanoparticle plasmons

NASA Astrophysics Data System (ADS)

Xing, Jieying; Chen, Yinsong; Liu, Yuebo; Liang, Jiezhi; Chen, Jie; Ren, Yuan; Han, Xiaobiao; Zhong, Changming; Yang, Hang; Huang, Dejia; Hou, Yaqian; Wu, Zhisheng; Liu, Yang; Zhang, Baijun

2018-05-01

We demonstrate the enhancement of emission of InGaN/GaN multiple-quantum-well nanorods by nearly a factor of 2 by coupling them to localized surface plasmons of Au nano-particles (NPs). The Au NPs are fabricated in situ on the nanorods using a Ni/SiO2/Au/SiNx compound functional layer. This layer serves as a combination dry-etch mask for fabricating the nanorods and the Au NPs, as well as providing isolation necessary to prevent fluorescence quenching. Time-resolved photoluminescence measurements confirm that emission enhancement originates from the coupling.

Laser-induced ferroelectric domain engineering in LiNbO3 crystals using an amorphous silicon overlayer

NASA Astrophysics Data System (ADS)

Zisis, G.; Martinez-Jimenez, G.; Franz, Y.; Healy, N.; Masaud, T. M.; Chong, H. M. H.; Soergel, E.; Peacock, A. C.; Mailis, S.

2017-08-01

We report laser-induced poling inhibition and direct poling in lithium niobate crystals (LiNbO3), covered with an amorphous silicon (a-Si) light-absorbing layer, using a visible (488 nm) continuous wave laser source. Our results show that the use of the a-Si overlayer produces deeper poling inhibited domains with minimum surface damage, as compared to previously reported UV laser writing experiments on uncoated crystals, thus increasing the applicability of this method in the production of ferroelectric domain engineered structures for nonlinear optical applications. The characteristics of the poling inhibited domains were investigated using differential etching and piezoresponse force microscopy.

Shape transition in nano-pits after solid-phase etching of SiO{sub 2} by Si islands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leroy, F.; Curiotto, S.; Cheynis, F.

2015-05-11

We study the nano-pits formed during the etching of a SiO{sub 2} film by reactive Si islands at T≈1000 °C. Combining low energy electron microscopy, atomic force microscopy, kinetic Monte Carlo simulations, and an analytic model based on reaction and diffusion at the solid interface, we show that the shape of the nanopits depend on the ratio R/x{sub s} with R the Si island radius and x{sub s} the oxygen diffusion-length at the Si/SiO{sub 2} interface. For small R/x{sub s}, nanopits exhibit a single-well V-shape, while a double-well W-shape is found for larger R/x{sub s}. The analysis of the transition revealsmore » that x{sub s}∼60 nm at T≈1000 °C.« less

Effect of Reduced Phosphoric Acid Pre-etching Times 
on Enamel Surface Characteristics and Shear Fatigue Strength Using Universal Adhesives.

PubMed

Tsujimoto, Akimasa; Fischer, Nicholas; Barkmeier, Wayne; Baruth, Andrew; Takamizawa, Toshiki; Latta, Mark; Miyazaki, Masashi

2017-01-01

To examine the effect of reduced phosphoric acid pre-etching times on enamel fatigue bond strength of universal adhesives and surface characteristics by using atomic force microscopy (AFM). Three universal adhesives were used in this study (Clearfil Universal Bond [C], G-Premio Bond [GP], Scotchbond Universal Adhesive [SU]). Four pre-etching groups were employed: enamel pre-etched with phosphoric acid and immediately rinsed with an air-water spray, and enamel pre-etched with phosphoric acid for 5, 10, or 15 s. Ground enamel was used as the control group. For the initial bond strength test, 15 specimens per etching group for each adhesive were used. For the shear fatigue test, 20 specimens per etching group for each adhesive were loaded using a sine wave at a frequency of 20 Hz for 50,000 cycles or until failure occurred. Initial shear bond strengths and fatigue shear strengths of composite adhesively bonded to ground and pre-etched enamel were determined. AFM observations of ground and pre-etched enamel were also conducted, and surface roughness as well as surface area were evaluated. The initial shear bond strengths and fatigue shear strengths of the universal adhesives in the pre-etched groups were significantly higher than those of the control group, and were not influenced by the pre-etching time. Significantly higher surface roughness and surface area of enamel surfaces in pre-etched groups were observed compared with those in the control group. While the surface area was not significantly influenced by etching time, surface roughness of the enamel surfaces in the pre-etched groups significantly increased with pre-etching time. The results of this in vitro study suggest that reduced phosphoric acid pre-etching times do not impair the fatigue bond strength of universal adhesives. Although fatigue bond strength and surface area were not influenced by phosphoric-acid etching times, surface roughness increased with increasing etching time.

Partially etched Ti3AlC2 as a promising high capacity Lithium-ion battery anode.

PubMed

Chen, Xifan; Zhu, Yuanzhi; Zhu, Xiaoquan; Peng, Wenchao; Li, Yang; Zhang, Guoliang; Zhang, Fengbao; Fan, Xiaobin

2018-06-25

MXenes, a family of two-dimensional transition-metal carbide and nitride materials, are supposed to be the promising materials in energy storage because of the high electronic conductivity, hydrophilic surfaces and low diffusion barriers. MXenes are generally prepared by removing the "A" elements (A = Al, Si, Sn, etc.) from their corresponding MAX phases by using hydrofluoric acid (HF) and the other etching agents, despite the fact that these "A" elements usually have great volumetric and gravimetric capacities. Herein, we studied the etching progress of Ti3AlC2 and evaluated their anode performance in Lithium-ion batteries. We found that a partially etched sample (0.5h-peTi3C2Tx) showed much higher capacity (160 mA h g-1, 331.6 mA h cm-3 at 1C) when compared with the fully etched Ti3C2Tx (110 mA h g-1, 190.3 mA h cm-3 at 1C). Besides, a 99% capacity retention was observed even after 1000 cycles in the 0.5h-peTi3C2Tx anode. This interesting result can be explained, at least in part, by the alloying of the residue Al element during lithiation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microstructural characterization of aluminum alloys using Weck's reagent, part I: Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Li, E-mail: gao.l.ab@m.titech.ac.jp; Harada, Yohei, E-mail: harada.y.ah@m.titech.ac.jp; Kumai, Shinji, E-mail: kumai.s.aa@m.titech.ac.jp

This paper focuses on the applications of a color etchant for aluminum alloys named Weck's reagent. The Al phase shows different colors from location to location after being etched by Weck's reagent. It is proved that Weck's reagent is very sensitive to the micro-segregations of Ti, Si and Mg in Al alloys so that characterization of the micro-segregations can be qualitatively realized which is usually done by electronic probe techniques. With the help of this characterization method, we are able to evaluate solid fractions for the semi-solid processed Al alloy with a better accuracy by excluding the Al grain growthmore » during water quenching. To understand this reagent better, the color change during etching is investigated by applying different etching times at room temperature (25 °C). Among those results, 12 s shows the best color contrast after etching. Finally, we repeat the 12 second etching for four times through repeating a polishing–etching process. The result exhibits that Weck's reagent has a satisfying re-producibility with stable color and color distribution for the four times etching result. The second part of this study covers the coloring mechanism of Weck's reagent by characterizing the etched surface via various characterization methods. - Highlights: • The applications of Weck's reagent for Al alloys are introduced in detail. • Detailed relationship between micro-segregations in Al phase and the color difference revealed by Weck's reagent are studied. • Etching time has a strong influence on the color revealed by Weck's reagent. • Besides micro-segregation, grain boundaries can also be visualized by Weck's reagent, which was proved by EBSD analysis.« less

Effect of etching time on morphological, optical, and electronic properties of silicon nanowires

PubMed Central

2012-01-01

Owing to their interesting electronic, mechanical, optical, and transport properties, silicon nanowires (SiNWs) have attracted much attention, giving opportunities to several potential applications in nanoscale electronic, optoelectronic devices, and silicon solar cells. For photovoltaic application, a superficial film of SiNWs could be used as an efficient antireflection coating. In this work we investigate the morphological, optical, and electronic properties of SiNWs fabricated at different etching times. Characterizations of the formed SiNWs films were performed using a scanning electron microscope, ultraviolet–visible-near-infrared spectroscopy, and light-beam-induced-current technique. The latter technique was used to determine the effective diffusion length in SiNWs films. From these investigations, we deduce that the homogeneity of the SiNWs film plays a key role on the electronic properties. PMID:22799265

Formation of nanoporous Si upon self-organized growth of Al and Si nanostructures.

PubMed

Thøgersen, Annett; Jensen, Ingvild J T; Stange, Marit; Kjeldstad, Torunn; Martinez-Martinez, Diego; Løvvik, Ole Martin; Ulyashin, Alexander G; Diplas, Spyros

2018-08-03

Nanostructured materials offer unique electronic and optical properties compared to their bulk counterparts. The challenging part of the synthesis is to create a balance between the control of design, size limitations, up-scalability and contamination. In this work we show that self-organized Al nanowires in amorphous Si can be produced at room temperature by magnetron co-sputtering using two individual targets. Nanoporous Si, containing nanotunnels with dimensions within the quantum confinement regime, were then made by selective etching of Al. The material properties, film growth, and composition of the films were investigated for different compositions. In addition, the reflectance of the etched film has been measured.

Micropore and nanopore fabrication in hollow antiresonant reflecting optical waveguides

PubMed Central

Holmes, Matthew R.; Shang, Tao; Hawkins, Aaron R.; Rudenko, Mikhail; Measor, Philip; Schmidt, Holger

2011-01-01

We demonstrate the fabrication of micropore and nanopore features in hollow antiresonant reflecting optical waveguides to create an electrical and optical analysis platform that can size select and detect a single nanoparticle. Micropores (4 μm diameter) are reactive-ion etched through the top SiO2 and SiN layers of the waveguides, leaving a thin SiN membrane above the hollow core. Nanopores are formed in the SiN membranes using a focused ion-beam etch process that provides control over the pore size. Openings as small as 20 nm in diameter are created. Optical loss measurements indicate that micropores did not significantly alter the loss along the waveguide. PMID:21922035

Micropore and nanopore fabrication in hollow antiresonant reflecting optical waveguides.

PubMed

Holmes, Matthew R; Shang, Tao; Hawkins, Aaron R; Rudenko, Mikhail; Measor, Philip; Schmidt, Holger

2010-01-01

We demonstrate the fabrication of micropore and nanopore features in hollow antiresonant reflecting optical waveguides to create an electrical and optical analysis platform that can size select and detect a single nanoparticle. Micropores (4 μm diameter) are reactive-ion etched through the top SiO(2) and SiN layers of the waveguides, leaving a thin SiN membrane above the hollow core. Nanopores are formed in the SiN membranes using a focused ion-beam etch process that provides control over the pore size. Openings as small as 20 nm in diameter are created. Optical loss measurements indicate that micropores did not significantly alter the loss along the waveguide.

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals.

PubMed

Ghosh, Ramesh; Giri, P K; Imakita, Kenji; Fujii, Minoru

2014-01-31

Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Surface and Internal Structure of Pristine Presolar Silicon Carbide

NASA Technical Reports Server (NTRS)

Stroud, Rhonda, M.; Bernatowicz, Thomas J.

2005-01-01

Silicon carbide is the most well-studied type of presolar grain. Isotope measurements of thousands [1,2] and structural data from over 500 individual grains have been reported [3]. The isotope data indicate that approximately 98% originated in asymptotic giant branch stars and 2% in supernovae. Although tens of different polytypes of SiC are known to form synthetically, only two polytypes have been reported for presolar grains. Daulton et al. [3] found that for SiC grains isolated from Murchison by acid treatments, 79.4% are 3C cubic beta-SiC, 2.7% are 2H hexagonal alpha-SiC, 17.1% are intergrowths of and , and 0.9% are heavily disordered. They report that the occurrence of only the and polytypes is consistent with the observed range of condensation temperatures of circumstellar dust for carbon stars. Further constraint on the formation and subsequent alteration of the grains can be obtained from studies of the surfaces and interior structure of grains in pristine form, i.e., prepared without acid treatments [4,5]. The acid treatments remove surface coatings, produce etch pits around defect sites and could remove some subgrains. Surface oxides have been predicted by theoretical modeling as a survival mechanism for SiC grains exposed to the hot oxidizing solar nebula [6]. Scanning electron microscopy studies of pristine SiC shows some evidence for the existence of oxide and organic coatings [4]. We report herein on transmission electron microscopy studies of the surface and internal structure of two pristine SiC grains, including definitive evidence of an oxide rim on one grain, and the presence of internal TiC and AlN grains.

Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

PubMed

Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

2015-04-08

Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

Copper-assisted, anti-reflection etching of silicon surfaces

DOEpatents

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

PubMed

Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

Near-infrared diode laser hydrogen fluoride monitor for dielectric etch

NASA Astrophysics Data System (ADS)

Xu, Ning; Pirkle, David R.; Jeffries, Jay B.; McMillin, Brian; Hanson, Ronald K.

2004-11-01

A hydrogen fluoride (HF) monitor, using a tunable diode laser, is designed and used to detect the etch endpoints for dielectric film etching in a commercial plasma reactor. The reactor plasma contains HF, a reaction product of feedstock gas CF4 and the hydrogen-containing films (photoresist, SiOCH) on the substrate. A near-infrared diode laser is used to scan the P(3) transition in the first overtone of HF near 1.31 μm to monitor changes in the level of HF concentration in the plasma. Using 200 ms averaging and a signal modulation technique, we estimate a minimum detectable HF absorbance of 6×10-5 in the etch plasma, corresponding to an HF partial pressure of 0.03 mTorr. The sensor could indicate, in situ, the SiOCH over tetraethoxysilane oxide (TEOS) trench endpoint, which was not readily discerned by optical emission. These measurements demonstrate the feasibility of a real-time diode laser-based sensor for etch endpoint monitoring and a potential for process control.

Fabrication of Si nanopowder and application to hydrogen generation and photoluminescent material

NASA Astrophysics Data System (ADS)

Kobayashi, Yuki; Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

2017-12-01

Si nanopowder is fabricated using the simple beads milling method. Fabricated Si nanopowder reacts with water in the neutral pH region between 7 and 9 to generate hydrogen. The hydrogen generation rate greatly increases with pH, while pH does not change after the hydrogen generation reaction. In the case of the reactions of Si nanopowder with strong alkaline solutions (eg pH13.9), 1600 mL hydrogen is generated from 1 g Si nanopowder in a short time (eg 15 min). When Si nanopowder is etched with HF solutions and immersed in ethanol, green photoluminescence (PL) is observed, and it is attributed to band-to-band transition of Si nanopowder. The Si nanopowder without HF etching in hexane shows blue PL. The PL spectra possess peaked structure, and it is attributed to vibronic bands of 9,10-dimethylantracene (DMA) in hexane solutions. The PL intensity is increased by more than 3,000 times by adsorption of DMA on Si nanopowder.

Optimized piranha etching process for SU8-based MEMS and MOEMS construction

PubMed Central

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2011-01-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides. PMID:21423840

Optimized piranha etching process for SU8-based MEMS and MOEMS construction.

PubMed

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2010-11-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H(2)O(2):H(2)SO(4)) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO(2) and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.

Optimized piranha etching process for SU8-based MEMS and MOEMS construction

NASA Astrophysics Data System (ADS)

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2010-11-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.

Chemical weathering in a tropical watershed, Luquillo Mountains, Puerto Rico III: Quartz dissolution rates

USGS Publications Warehouse

Schulz, M.S.; White, A.F.

1999-01-01

The paucity of weathering rates for quartz in the natural environment stems both from the slow rate at which quartz dissolves and the difficulty in differentiating solute Si contributed by quartz from that derived from other silicate minerals. This study, a first effort in quantifying natural rates of quartz dissolution, takes advantage of extremely rapid tropical weathering, simple regolith mineralogy, and detailed information on hydrologic and chemical transport. Quartz abundances and grain sizes are relatively constant with depth in a thick saprolite. Limited quartz dissolution is indicated by solution rounding of primary angularity and by the formation of etch pits. A low correlation of surface area (0.14 and 0.42 m2 g-1) with grain size indicates that internal microfractures and pitting are the principal contributors to total surface area. Pore water silica concentration increases linearly with depth. On a molar basis, between one and three quarters of pore water silica is derived from quartz with the remainder contributed from biotite weathering. Average solute Si remains thermodynamically undersaturated with respect to recently revised estimates of quartz solubility (17-81 ??M). Etch pitting is more abundant on grains in the upper saprolite and is associated with pore waters lower in dissolved silica. Rate constants describing quartz dissolution increase with decreasing depth (from 10-14.5-10-15.1 mol m-2 s-1), which correlate with both greater thermodynamic undersaturation and increasing etch pit densities. Unlike for many aluminosilicates, the calculated natural weathering rates of quartz fall slightly below the rate constants previously reported for experimental studies (10-12.4-10-14.2 mol m-2 s-1). This agreement reflects the structural simplicity of quartz, dilute solutes, and near-hydrologic saturation.

Preparation of Hierarchical Highly Ordered Porous Films of Brominated Poly(phenylene oxide) and Hydrophilic SiO2/C Membrane via the Breath Figure Method

PubMed Central

Yuan, Hua; Yu, Bing; Chi, Ming; Cheng, Yuanzhe; Lv, Chunxin

2018-01-01

Porous permeable films materials have very broad prospects in the treatment of sludge-containing waste water due to their large surface area and good microfiltration. In this work, highly ordered porous membranes have been prepared successfully on ice substrates using a poly(phenylene oxide) (BPPO)-SiO2 nanoparticle (NP) mixture by the breath figure method. Based on the theory of Pickering emulsion system and capillary flow, particle assisted membrane formation was analyzed. Another two sorts of new membranes SiO2/C membrane and hierarchical porous polymer (HPP) membrane, which were obtained by modification of the BPPO-SiO2 membrane by calcination and etching, were set up in a further study. Their properties were investigated through the methods of scanning electron microscopy (SEM), fourier transform infrared spectrometry (FTIR), ultraviolet spectrum (UV), capillary electrophoresis (CE), contact angle, and water flux tests. All these results demonstrate that both surface hydrophilicity and fouling resistance of the membrane would be improved by using SiO2 as a filler. The membranes with high permeability and antifouling properties were used for microfiltration applications. PMID:29570622

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

NASA Astrophysics Data System (ADS)

Wu, Mingching; Fang, Weileun

2005-03-01

This work integrates multi-depth DRIE etching, trench-refilled molding, two poly-Si layers MUMPs and bulk releasing to improve the variety and performance of MEMS devices. In summary, the present fabrication process, named MOSBE II, has three merits. First, this process can monolithically fabricate and integrate poly-Si thin-film structures with different thicknesses and stiffnesses, such as the flexible spring and the stiff mirror plate. Second, multi-depth structures, such as vertical comb electrodes, are available from the DRIE processes. Third, a cavity under the micromachined device is provided by the bulk silicon etching process, so that a large out-of-plane motion is allowed. In application, an optical scanner driven by the self-aligned vertical comb actuator was demonstrated. The poly-Si micromachined components fabricated by MOSBE II can further integrate with the MUMPs devices to establish a more powerful MOEMS platform.

Fabrication of SOI structures with buried cavities using Si wafer direct bonding and electrochemical etch-stop

NASA Astrophysics Data System (ADS)

Chung, Gwiy-Sang

2003-10-01

This paper describes the fabrication of SOI structures with buried cavities using SDB and electrochemical etch-stop. These methods are suitable for thick membrane fabrication with accurate thickness, uniformity, and flatness. After a feed-through hole for supplied voltage and buried cavities was formed on a handle Si wafer with p-type, the handle wafer was bonded to an active Si wafer consisting of a p-type substrate with an n-type epitaxial layer corresponding to membrane thickness. The bonded pair was then thinned until electrochemical etch-stop occurred at the pn junction during electrochemical etchback. By using the SDB SOI structure with buried cavities, active membranes, which have a free standing structure with a dimension of 900×900 μm2, were fabricated. It is confirmed that the fabrication process of the SDB SOI structure with buried cavities is a powerful and versatile technology for new MEMS applications.

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

NASA Astrophysics Data System (ADS)

Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

2006-09-01

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 × 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

NASA Astrophysics Data System (ADS)

Izumi, Shouichiro; Minami, Masaki; Kamada, Michiru; Tatsumi, Tetsuya; Yamaguchi, Atsushi A.; Ishikawa, Kenji; Hori, Masaru; Tomiya, Shigetaka

2013-08-01

Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (˜60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.

Conformal SiO2 coating of sub-100 nm diameter channels of polycarbonate etched ion-track channels by atomic layer deposition

PubMed Central

Sobel, Nicolas; Lukas, Manuela; Spende, Anne; Stühn, Bernd; Trautmann, Christina

2015-01-01

Summary Polycarbonate etched ion-track membranes with about 30 µm long and 50 nm wide cylindrical channels were conformally coated with SiO2 by atomic layer deposition (ALD). The process was performed at 50 °C to avoid thermal damage to the polymer membrane. Analysis of the coated membranes by small angle X-ray scattering (SAXS) reveals a homogeneous, conformal layer of SiO2 in the channels at a deposition rate of 1.7–1.8 Å per ALD cycle. Characterization by infrared and X-ray photoelectron spectroscopy (XPS) confirms the stoichiometric composition of the SiO2 films. Detailed XPS analysis reveals that the mechanism of SiO2 formation is based on subsurface crystal growth. By dissolving the polymer, the silica nanotubes are released from the ion-track membrane. The thickness of the tube wall is well controlled by the ALD process. Because the track-etched channels exhibited diameters in the range of nanometres and lengths in the range of micrometres, cylindrical tubes with an aspect ratio as large as 3000 have been produced. PMID:25821688

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

NASA Technical Reports Server (NTRS)

Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

1999-01-01

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

The formation mechanism for printed silver-contacts for silicon solar cells.

PubMed

Fields, Jeremy D; Ahmad, Md Imteyaz; Pool, Vanessa L; Yu, Jiafan; Van Campen, Douglas G; Parilla, Philip A; Toney, Michael F; van Hest, Maikel F A M

2016-04-01

Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant and non-toxic materials, a better understanding the contact formation process during firing is required. Here, we use in situ X-ray diffraction during firing to reveal the reaction sequence. The findings suggest that between 500 and 650 °C PbO in the frit etches the SiNx antireflective-coating on the solar cell, exposing the Si surface. Then, above 650 °C, Ag(+) dissolves into the molten glass frit - key for enabling deposition of metallic Ag on the emitter surface and precipitation of Ag nanocrystals within the glass. Ultimately, this work clarifies contact formation mechanisms and suggests approaches for development of inexpensive, nontoxic solar cell contacting pastes.

Negative charge emission due to excimer laser bombardment of sodium trisilicate glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Langford, S.C.; Jensen, L.C.; Dickinson, J.T.

We describe measurements of negative charge emission accompanying irradiation of sodium trisilicate glass (Na{sub 2}O{center dot}3SiO{sub 2}) with 248-nm excimer laser light at fluences on the order of 2 J/cm{sup 2} per pulse, i.e., at the threshold for ablative etching of the glass surface. The negative charge emission consists of a very prompt photoelectron burst coincident with the laser pulse, followed by a much slower plume of electrons and negative ions traveling with a high density cloud of positive ions, previously identified as primarily Na{sup +}. Using combinations of {bold E} and {bold B} fields in conjunction with time-of-flight methods,more » the negative ions were successfully separated from the plume and tentatively identified as O{sup {minus}}, Si{sup {minus}}, NaO{sup {minus}}, and perhaps NaSi{sup {minus}}. These negative species are probably formed by gas phase collisions in the near-surface region which result in electron attachment.« less

Reactive pathways of hydrogen and carbon removal from organosilicate glass low- κ films by F atoms

NASA Astrophysics Data System (ADS)

Voronina, Ekaterina N.; Mankelevich, Yuri A.; Rakhimova, Tatyana V.

2017-07-01

Direct molecular dynamic simulation on the base of the density functional theory (DFT) method is used to study some critical reactions of F atoms with organosilicate glass (OSG) low-κ films. Here static and dynamic DFT-based approaches are applied for a variety of reactive pathways of hydrogen and carbon removal in the form of volatile products (HF, CF2 and CF3 molecules) from initial SiCH3 surface groups. These reactions constitute an important part of the proposed multi-step mechanism of OSG films damage and etching by thermal F atoms. Two models (POSS and TMCTS macromolecules and their modifications) are used to illustrate the peculiarities and dynamics of the successive reactions of F atoms with the initial SiCH3 and appeared SiCHxFy (x + y ≤ 3) surface groups. Contribution to the Topical Issue "Dynamics of Molecular Systems (MOLEC 2016)", edited by Alberto Garcia-Vela, Luis Banares and Maria Luisa Senent.

The formation mechanism for printed silver-contacts for silicon solar cells

DOE PAGES

Fields, Jeremy D.; Ahmad, Md. Imteyaz; Pool, Vanessa L.; ...

2016-04-01

Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant, and non-toxic materials requires understanding the contact formation process during firing. Here, we use in-situ X-ray diffraction during firing to reveal the reaction sequence. The findings suggest that between 500 degrees C and 650 degrees C PbO in the frit etches the SiNx antireflective-coating on the solar cell, exposingmore » the Si surface. Then, above 650 degrees C, Ag+ dissolves into the molten glass frit -- key for enabling deposition of metallic Ag on the emitter surface and precipitation of Ag nanocrystals within the glass. Ultimately, this work clarifies contact formation mechanisms and suggests approaches for development of inexpensive, nontoxic solar cell contacting pastes.« less

Research and Development for Continued Performance Improvement in Flexible a-Si PV

DTIC Science & Technology

2010-12-14

accomplished, however, at low temperatures silicides tend to form on the surface of the filament, which affected filament lifetime and deposition rate...considered. Titanium Nitride, sputtered As an alternative to the hot wire deposition of silicon, samples were prepared with various thicknesses of...Silicon 21 Insitu DC Sputtering Titanium Nitride 22 Metal Machine 2 ឈ> RF Oxygen Plasma Silicon Dioxide 20. Oxygen Etch Table A.4.1 Open circuit

Design of experiment for optimization of plasma-polymerized octafluorocyclobutane coating on very high aspect ratio silicon molds.

PubMed

Yeo, L P; Yan, Y H; Lam, Y C; Chan-Park, Mary B

2006-11-21

As-fabricated deep reactive ion etched (DRIE) silicon mold with very high aspect ratio (>10) feature patterns is unsuitable for poly(dimethylsiloxane) (PDMS) replication because of the strong interaction between the Si surface and the replica and the corrugated mold sidewalls. The silicon mold can be conveniently passivated via plasma polymerization of octafluorocyclobutane (C4F8), which is also employed in the DRIE process itself, to enable the mold to be used repeatedly. To optimize the passivation conditions, we have undertaken a Box-Behnken experimental design on the basis of three passivation process parameters (plasma power, C4F8 flow rate, and deposition time). The measured responses were fluorinated film thickness, demolding status/success, demolding force, and fluorine/carbon ratio on the fifth replica surface. The optimal passivation process conditions were predicted to be an input power of 195 W, a C4F8 flow rate of 57 sccm, and a deposition time of 364 s; these were verified experimentally to have high accuracy. Demolding success requires medium-deposited film thickness (66-91 nm), and the thickness of the deposited films correlated strongly with deposition time. At moderate to high ranges, increased plasma power or gas flow rate promoted polymerization over reactive etching of the film. It was also found that small quantities of the fluorinated surface were transferred from the Si mold to the PDMS at each replication, entailing progressive wear of the fluorinated layer.

Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge

PubMed Central

Scopece, Daniele; Döbeli, Max; Passerone, Daniele; Maeder, Xavier; Neels, Antonia; Widrig, Beno; Dommann, Alex; Müller, Ulrich; Ramm, Jürgen

2016-01-01

Abstract The pre-treatment of substrate surfaces prior to deposition is important for the adhesion of physical vapour deposition coatings. This work investigates Si surfaces after the bombardment by energetic Cr ions which are created in cathodic arc discharges. The effect of the pre-treatment is analysed by X-ray diffraction, Rutherford backscattering spectroscopy, scanning electron microscopy and in-depth X-ray photoemission spectroscopy and compared for Cr vapour produced from a filtered and non-filtered cathodic arc discharge. Cr coverage as a function of ion energy was also predicted by TRIDYN Monte Carlo calculations. Discrepancies between measured and simulated values in the transition regime between layer growth and surface removal can be explained by the chemical reactions between Cr ions and the Si substrate or between the substrate surface and the residual gases. Simulations help to find optimum and more stable parameters for specific film and substrate combinations faster than trial-and-error procedure. PMID:27877854

Performance of a new one-step multi-mode adhesive on etched vs non-etched enamel on bond strength and interfacial morphology.

PubMed

de Goes, Mario Fernando; Shinohara, Mirela Sanae; Freitas, Marcela Santiago

2014-06-01

To compare microtensile bond strength (μTBS) and interfacial morphology of a new one-step multimode adhesive with a two-step self-etching adhesive and two etch-and-rinse adhesives systems on enamel. Thirty human third molars were sectioned to obtain two enamel fragments. For μTBS, 48 enamel surfaces were ground using 600-grit SiC paper and randomly assigned into 6 groups (n = 8): nonetched Scotchbond Universal [SBU]; etched SBU [SBU-et]; non-etched Clearfil SE Bond [CSE]; etched CSE [CSE-et]; Scotchbond Multi-PURPOSE [SBMP]; Excite [EX]. The etched specimens were conditioned with 37% phosphoric acid for 30 s, each adhesive system was applied according to manufacturers' instructions, and composite resin blocks (Filtek Supreme Plus, 3M ESPE) were incrementally built up. Specimens were sectioned into beams with a cross-sectional area of 0.8-mm2 and tested under tension (1 mm/min). The data were analyzed with oneway ANOVA and Fisher's PLSD (α = 0.05). For interface analysis, two samples from each group were embedded in epoxy resin, polished, and then observed using scanning electron microscopy (SEM). The μTBS values (in MPa) and the standard deviations were: SBU = 27.4 (8.5); SBU-et = 33.6 (9.3); CSE = 28.5 (8.3); CSE-et = 34.2 (9.0); SBMP = 30.4 (11.0); EX = 23.3 (8.2). CSE-et and SBU-et presented the highest bond strength values, followed by SBMP, CSE, and SBU which did not differ significantly from each other. EX showed the statistically significantly lowest bond strength values. SEM images of interfaces from etched samples showed long adhesive-resin tags penetrating into demineralized enamel. Preliminary etching of enamel significantly increased bond strength for the new one-step multimode adhesive SBU and two-step self-etching adhesive CSE.

Dissolution of uranophane: An AFM, XPS, SEM and ICP study

NASA Astrophysics Data System (ADS)

Schindler, Michael; Freund, Michael; Hawthorne, Frank C.; Burns, Peter C.; Maurice, Patricia A.

2009-05-01

Dissolution experiments on single crystals of uranophane and uranophane-β, Ca(H 2O) 5[(UO 2)(SiO 3(OH)] 2, from the Shinkolobwe mine of the Democratic Republic of Congo, were done in an aqueous HCl solution of pH 3.5 for 3 h, in HCl solutions of pH 2 for 5, 10 and 30 min, and in Pb 2+-, Ba-, Sr-, Ca- and Mg-HCl solutions of pH 2 for 30 min. The basal surfaces of the treated uranophane crystals were examined using atomic-force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Solutions after dissolution experiments on single crystals and synthetic powders were analysed with inductively coupled plasma-optical emission spectroscopy (ICP-OES) and mass spectroscopy (ICP-MS). The morphology of the observed etch pits (measured by AFM) were compared to the morphology, predicted on the basis of the bond-valence deficiency of polyhedron chains along the edges of the basal surface. Etch pits form in HCl solutions of pH 2. Their decrease in depth with the duration of the dissolution experiment is explained with the stepwave dissolution model, which describes the lowering of the surrounding area of an etch pit with continuous waves of steps emanated from the etch pit into the rest of the crystal surface. Hillocks form in an HCl solution of pH 3.5, and the chemical composition of the surface (as indicated by XPS) shows that these hillocks are the result of the precipitation of a uranyl-hydroxy-hydrate phase. Well-orientated hillocks form on the surface of uranophane in a SrCl 2-HCl solution of pH 2. They are part of an aged silica coating of composition Si 2O 2(OH) 4(H 2O) n. An amorphous layer forms on the surface of uranophane in a MgCl 2-HCl solution of pH 2, which has a composition and structure similar to silicic acid. Small crystallites of uranyl-hydroxy-hydrate phases form on the surface of uranophane after treatment in Pb(NO 3) 2-HCl and BaCl 2-HCl solutions of pH 2. Dissolution experiments on synthetic uranophane powders show that in the early stage of the experiments, the dissolution rate of uranophane increase in the sequence Pb(NO 3) 2-HCl < BaCl 2-HCl < CaCl 2-HCl < HCl < SrCl 2-HCl < MgCl 2-HCl, indicating that the dissolution of uranophane is more enhanced in solutions containing divalent cations of small ionic radii and high Lewis acidity (Mg, MgCl +).

Fatigue resistance of bovine teeth restored with resin-bonded fiber posts: effect of post surface conditioning.

PubMed

Zamboni, Sandra C; Baldissara, Paolo; Pelogia, Fernanda; Bottino, Marco Antonio; Scotti, Roberto; Valandro, Luiz Felipe

2008-01-01

This study evaluated the effect of post surface conditioning on the fatigue resistance of bovine teeth restored with resin-bonded fiber-reinforced composite (FRC). Root canals of 20 single-rooted bovine teeth (16 mm long) were prepared to 12 mm using a preparation drill of a double-tapered fiber post system. Using acrylic resin, each specimen was embedded (up to 3.0 mm from the cervical part of the specimen) in a PVC cylinder and allocated into one of two groups (n = 10) based on the post surface conditioning method: acid etching plus silanization or tribochemical silica coating (30 pm SiO(x) + silanization). The root canal dentin was etched (H2PO3 for 30 seconds), rinsed, and dried. A multi-step adhesive system was applied to the root dentin and the fiber posts were cemented with resin cement. The specimens were submitted to one million fatigue cycles. After fatigue testing, a score was given based on the number of fatigue cycles until fracture. All of the specimens were resistant to fatigue. No fracture of the root or the post and no loss of retention of the post were observed. The methodology and the results of this study indicate that tribochemical silica coating and acid etching performed equally well when dynamic mechanical loading was used.

Rapid Biochemical Mixture Screening by Three-Dimensional Patterned Multifunctional Substrate with Ultra-Thin Layer Chromatography (UTLC) and Surface Enhanced Raman Scattering (SERS).

PubMed

Lee, Bi-Shen; Lin, Pi-Chen; Lin, Ding-Zheng; Yen, Ta-Jen

2018-01-11

We present a three-dimensional patterned (3DP) multifunctional substrate with the functions of ultra-thin layer chromatography (UTLC) and surface enhanced Raman scattering (SERS), which simultaneously enables mixture separation, target localization and label-free detection. This multifunctional substrate is comprised of a 3DP silicon nanowires array (3DP-SiNWA), decorated with silver nano-dendrites (AgNDs) atop. The 3DP-SiNWA is fabricated by a facile photolithographic process and low-cost metal assisted chemical etching (MaCE) process. Then, the AgNDs are decorated onto 3DP-SiNWA by a wet chemical reduction process, obtaining 3DP-AgNDs@SiNWA multifunctional substrates. With various patterns designed on the substrates, the signal intensity could be maximized by the excellent confinement and concentrated effects of patterns. By using this 3DP-AgNDs@SiNWA substrate to scrutinize the mixture of two visible dyes, the individual target could be recognized and further boosted the Raman signal of target 15.42 times comparing to the un-patterned AgNDs@SiNWA substrate. Therefore, such a three-dimensional patterned multifunctional substrate empowers rapid mixture screening, and can be readily employed in practical applications for biochemical assays, food safety and other fields.