Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching

NASA Astrophysics Data System (ADS)

Ichikawa, Takashi; Yagisawa, Takashi; Furukawa, Shinichi; Taguchi, Takafumi; Nojima, Shigeki; Murakami, Sadatoshi; Tamaoki, Naoki

2018-06-01

A topography simulation of high-aspect-ratio etching considering transports of ions and neutrals is performed, and the mechanism of reactive ion etching (RIE) residues in three-dimensional corner patterns is revealed. Limited ion flux and CF2 diffusion from the wide space of the corner is found to have an effect on the RIE residues. Cooperative simulation of lithography and topography is used to solve the RIE residue problem.

Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures

NASA Astrophysics Data System (ADS)

Sökmen, Ü.; Stranz, A.; Fündling, S.; Wehmann, H.-H.; Bandalo, V.; Bora, A.; Tornow, M.; Waag, A.; Peiner, E.

2009-10-01

Inductively coupled plasma (ICP) cryogenic dry etching was used to etch submicron pores, nano contact lines, submicron diameter pillars, thin and thick cantilevers, membrane structures and anisotropic deep structures with high aspect ratios in silicon for bio-nanoelectronics, optoelectronics and nano-micro electromechanical systems (NMEMS). The ICP cryogenic dry etching gives us the advantage of switching plasmas between etch rates of 13 nm min-1 and 4 µm min-1 for submicron pores and for membrane structures, respectively. A very thin photoresist mask can endure at -75 °C even during etching 70 µm deep for cantilevers and 300 µm deep for membrane structures. Coating the backsides of silicon membrane substrates with a thin photoresist film inhibited the lateral etching of cantilevers during their front release. Between -95 °C and -140 °C, we realized crystallographic-plane-dependent etching that creates facets only at the etch profile bottom. By varying the oxygen content and the process temperature, we achieved good control over the shape of the etched structures. The formation of black silicon during membrane etching down to 300 µm was delayed by reducing the oxygen content.

High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures

DTIC Science & Technology

2009-05-01

voltage (I-V) characteristics of several infrared LEDs, including a type-II W-well laser grown by Molecular Beam Epitaxy at Naval Research Laboratory...Injection Cavity (OPIC) lasers includes >4 um emission from a broadband laser and the measurement of spatial and temporal beam profiles. From August 2006...argon) at 15 mTorr, 400W ICP, and 70W RIE power, with an etch rate of 300 nm/min. Epitaxial ZnO layers were plasma etched using BCl3/SF0gas mixtures

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Silicon macroporous arrays with high aspect ratio prepared by ICP etching

NASA Astrophysics Data System (ADS)

Wang, Guozheng; Yang, Bingchen; Wang, Ji; Yang, Jikai; Duanmu, Qingduo

2018-02-01

This paper reports on a macroporous silicon arrays with high aspect ratio, the pores of which are of 162, 205, 252, 276μm depths with 6, 10, 15 and 20 μm diameters respectively, prepared by Multiplex Inductively Coupled Plasma (ICP) etching. It was shown that there are very differences in process of high aspect ratio microstructures between the deep pores, a closed structure, and deep trenches, a open structure. The morphology and the aspect ratio dependent etching were analyzed and discussed. The macroporous silicon etched by ICP process yield an uneven, re-entrant, notched and ripples surface within the pores. The main factors effecting on the RIE lag of HARP etching are the passivation cycle time, the pressure of reactive chamber, and the platen power of ICP system.

Plasma-Induced, Self-Masking, One-Step Approach to an Ultrabroadband Antireflective and Superhydrophilic Subwavelength Nanostructured Fused Silica Surface.

PubMed

Ye, Xin; Shao, Ting; Sun, Laixi; Wu, Jingjun; Wang, Fengrui; He, Junhui; Jiang, Xiaodong; Wu, Wei-Dong; Zheng, Wanguo

2018-04-25

In this work, antireflective and superhydrophilic subwavelength nanostructured fused silica surfaces have been created by one-step, self-masking reactive ion etching (RIE). Bare fused silica substrates with no mask were placed in a RIE vacuum chamber, and then nanoscale fluorocarbon masks and subwavelength nanostructures (SWSs) automatically formed on these substrate after the appropriate RIE plasma process. The mechanism of plasma-induced self-masking SWS has been proposed in this paper. Plasma parameter effects on the morphology of SWS have been investigated to achieve perfect nanocone-like SWS for excellent antireflection, including process time, reactive gas, and pressure of the chamber. Optical properties, i.e., antireflection and optical scattering, were simulated by the finite difference time domain (FDTD) method. Calculated data agree well with the experiment results. The optimized SWS show ultrabroadband antireflective property (up to 99% from 500 to 1360 nm). An excellent improvement of transmission was achieved for the deep-ultraviolet (DUV) range. The proposed low-cost, highly efficient, and maskless method was applied to achieve ultrabroadband antireflective and superhydrophilic SWSs on a 100 mm optical window, which promises great potential for applications in the automotive industry, goggles, and optical devices.

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

PubMed

Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

2012-07-01

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Optimization of reactive-ion etching (RIE) parameters for fabrication of tantalum pentoxide (Ta2O5) waveguide using Taguchi method

NASA Astrophysics Data System (ADS)

Muttalib, M. Firdaus A.; Chen, Ruiqi Y.; Pearce, S. J.; Charlton, Martin D. B.

2017-11-01

In this paper, we demonstrate the optimization of reactive-ion etching (RIE) parameters for the fabrication of tantalum pentoxide (Ta2O5) waveguide with chromium (Cr) hard mask in a commercial OIPT Plasmalab 80 RIE etcher. A design of experiment (DOE) using Taguchi method was implemented to find optimum RF power, mixture of CHF3 and Ar gas ratio, and chamber pressure for a high etch rate, good selectivity, and smooth waveguide sidewall. It was found that the optimized etch condition obtained in this work were RF power = 200 W, gas ratio = 80 %, and chamber pressure = 30 mTorr with an etch rate of 21.6 nm/min, Ta2O5/Cr selectivity ratio of 28, and smooth waveguide sidewall.

Large Scale Synthesis of Colloidal Si Nanocrystals and their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films.

PubMed

Mohapatra, Pratyasha; Mendivelso-Perez, Deyny; Bobbitt, Jonathan M; Shaw, Santosh; Yuan, Bin; Tian, Xinchun; Smith, Emily A; Cademartiri, Ludovico

2018-05-30

This paper describes a simple approach to the large scale synthesis of colloidal Si nanocrystals and their processing by He plasma into spin-on carbon-free nanocrystalline Si films. We further show that the RIE etching rate in these films is 1.87 times faster than for single crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.

Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma

NASA Astrophysics Data System (ADS)

Shen, Lanlan; Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Liu, Bo; Wu, Liangcai; Cheng, Yan; Feng, Songlin

2016-10-01

Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF4 is needed for high etch rate and 10% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.

Processing for Highly Efficient AlGaN/GaN Emitters

DTIC Science & Technology

2009-09-09

effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The...was the as-grown GaN layer without any surface treatment while sample 2 was treated with SiCl4 plasma in a reactive ion etching (RIE) system with a...plasma self-bias voltage of −300 V for 60 s. Samples 3, 4, and 5 were treated with SiCl4 plasma and followed by a 2-min dip in NH4OH, HCl, and BOE

Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

NASA Astrophysics Data System (ADS)

Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

2006-01-01

In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

The effect of reactive ion etch (RIE) process conditions on ReRAM device performance

NASA Astrophysics Data System (ADS)

Beckmann, K.; Holt, J.; Olin-Ammentorp, W.; Alamgir, Z.; Van Nostrand, J.; Cady, N. C.

2017-09-01

The recent surge of research on resistive random access memory (ReRAM) devices has resulted in a wealth of different materials and fabrication approaches. In this work, we describe the performance implications of utilizing a reactive ion etch (RIE) based process to fabricate HfO2 based ReRAM devices, versus a more unconventional shadow mask fabrication approach. The work is the result of an effort to increase device yield and reduce individual device size. Our results show that choice of RIE etch gas (SF6 versus CF4) is critical for defining the post-etch device profile (cross-section), and for tuning the removal of metal layers used as bottom electrodes in the ReRAM device stack. We have shown that etch conditions leading to a tapered profile for the device stack cause poor electrical performance, likely due to metal re-deposition during etching, and damage to the switching layer. These devices exhibit nonlinear I-V during the low resistive state, but this could be improved to linear behavior once a near-vertical etch profile was achieved. Device stacks with vertical etch profiles also showed an increase in forming voltage, reduced switching variability and increased endurance.

High density plasma etching of magnetic devices

NASA Astrophysics Data System (ADS)

Jung, Kee Bum

Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3-rich to achieve the highest etch rates. Several different mask materials were investigated, including photoresist, thermal oxide and deposited oxide. Photoresist etches very rapidly in CO/NH 3 and use of a hard mask is necessary to achieve pattern transfer. Due to its physically dominated nature, the CO/NH3 chemistry appears suited to shallow etch depth (≤0.5mum) applications, but mask erosion leads to sloped feature sidewalls for deeper features.

A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wild, Larry

2003-01-01

Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article, several experiments on RIE in BCl3 and Cl2 (and sometimes Ar) had demonstrated the 10:1 selectivity ratio, and further experiments to enhance understanding and obtain further guidance for optimizing process conditions were planned.

Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

DOE PAGES

Fischer, Arthur J.; Anderson, P. Duke; Koleske, Daniel D.; ...

2017-08-18

We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP-RIE), we fabricate arrays of nanowires on a III-nitride platform. Next, we integrate QDs of controlled size within the prepatterned nanowires using a bandgap-selective, wet-etching technique: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. Low-temperature microphotoluminescence (μ-PL) measurements of individual nanowires reveal sharp spectral signatures, indicative of QD formation. Further, internal quantum efficiency (IQE) measurements reveal a near order of magnitude improvement in emitter efficiency following QSC-PEC etching. Finally, second-order cross-correlation (g(2)(0)) measurements of individualmore » QDs directly confirm nonclassical, antibunching behavior. Lastly, our results illustrate an exciting approach toward the top-down integration of nonclassical light sources within nanophotonic platforms.« less

Deterministic Placement of Quantum-Size Controlled Quantum Dots for Seamless Top-Down Integration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fischer, Arthur J.; Anderson, P. Duke; Koleske, Daniel D.

We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP-RIE), we fabricate arrays of nanowires on a III-nitride platform. Next, we integrate QDs of controlled size within the prepatterned nanowires using a bandgap-selective, wet-etching technique: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. Low-temperature microphotoluminescence (μ-PL) measurements of individual nanowires reveal sharp spectral signatures, indicative of QD formation. Further, internal quantum efficiency (IQE) measurements reveal a near order of magnitude improvement in emitter efficiency following QSC-PEC etching. Finally, second-order cross-correlation (g(2)(0)) measurements of individualmore » QDs directly confirm nonclassical, antibunching behavior. Lastly, our results illustrate an exciting approach toward the top-down integration of nonclassical light sources within nanophotonic platforms.« less

[INVITED] Sensing properties of micro-cavity in-line Mach-Zehnder interferometer enhanced by reactive ion etching

NASA Astrophysics Data System (ADS)

Janik, Monika; Koba, Marcin; Celebańska, Anna; Bock, Wojtek J.; Śmietana, Mateusz

2018-07-01

In this work, we discuss an application of reactive ion etching (RIE) for enhancing the sensing properties of a micro-cavity in-line Mach-Zehnder interferometer (μIMZI). The μIMZI was fabricated using femtosecond laser micromachining in a standard single-mode fiber as a circular hole with a diameter of 54 μm. Next, the structures underwent two kinds of RIE using as reactive gases: sulfur hexafluoride (SF6) and oxygen (O2) mixtures (SF6/O2) or O2 itself. When RIE with SF6/O2 was applied, it allowed for an efficient and well-controlled etching of the fabricated structure at nanometers level observed as an increase in spectral depths of the minima in the μIMZI transmission spectrum. A similar RIE process with O2 alone was ineffective. The well-defined minima obtained with the SF6/O2 RIE significantly improved the resolution of measurements made with the μIMZI. The effect was demonstrated for high-resolution refractive index (RI) measurements of liquids in the cavity. The result of the RIE process was to clean the micro-cavity bottom, increase its depth, and smooth its sidewalls. As an additional effect, the wettability of the micro-cavity surface was improved, making the RI measurements faster and more repeatable. Moreover, we demonstrated that RIE with SF6/O2 results in more stable wettability improvement than when O2 is applied as a reactive gas.

Optical performance of random anti-reflection structured surfaces (rARSS) on spherical lenses

NASA Astrophysics Data System (ADS)

Taylor, Courtney D.

Random anti-reflection structured surfaces (rARSS) have been reported to improve transmittance of optical-grade fused silica planar substrates to values greater than 99%. These textures are fabricated directly on the substrates using reactive-ion/inductively-coupled plasma etching (RIE/ICP) techniques, and often result in transmitted spectra with no measurable interference effects (fringes) for a wide range of wavelengths. The RIE/ICP processes used in the fabrication process to etch the rARSS is anisotropic and thus well suited for planar components. The improvement in spectral transmission has been found to be independent of optical incidence angles for values from 0° to +/-30°. Qualifying and quantifying the rARSS performance on curved substrates, such as convex lenses, is required to optimize the fabrication of the desired AR effect on optical-power elements. In this work, rARSS was fabricated on fused silica plano-convex (PCX) and plano-concave (PCV) lenses using a planar-substrate optimized RIE process to maximize optical transmission in the range from 500 to 1100 nm. An additional set of lenses were etched in a non-optimized ICP process to provide additional comparisons. Results are presented from optical transmission and beam propagation tests (optimized lenses only) of rARSS lenses for both TE and TM incident polarizations at a wavelength of 633 nm and over a 70° full field of view in both singlet and doublet configurations. These results suggest optimization of the fabrication process is not required, mainly due to the wide angle-of-incidence AR tolerance performance of the rARSS lenses. Non-optimized recipe lenses showed low transmission enhancement, and confirmed the need to optimized etch recipes prior to process transfer of PCX/PCV lenses. Beam propagation tests indicated no major beam degradation through the optimized lens elements. Scanning electron microscopy (SEM) images confirmed different structure between optimized and non-optimized samples. SEM images also indicated isotropically-oriented surface structures on both types of lenses.

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

PubMed

Sung, Ho-Kun; Qiang, Tian; Yao, Zhao; Li, Yang; Wu, Qun; Lee, Hee-Kwan; Park, Bum-Doo; Lim, Woong-Sun; Park, Kyung-Ho; Wang, Cong

2017-06-20

This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF 6 with additive O 2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl 3  + N 2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl 2  + O 2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl 2 and 3.6 sccm O 2 . These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.

Oxygen plasma surface modification augments poly(L-lactide-co-glycolide) cytocompatibility toward osteoblasts and minimizes immune activation of macrophages.

PubMed

Scislowska-Czarnecka, Anna; Szmigiel, Dariusz; Genet, Michel; Dupont-Gillain, Christine; Pamula, Elzbieta; Kolaczkowska, Elzbieta

2015-12-01

Here, we report on modification of one of the model biomedical polymers, poly L-lactide-co-glycolide (PLGA; 85:15), by reactive ion etching (RIE) oxygen plasma treatment. PLGA's major disadvantage is high hydrophobicity which restrains binding of cell-adhesive proteins and host cells. In the current approach, we aimed to answer two questions: (1) will only short (10 s) and moderate (20-200 mTorr, 45-90 W) RIE oxygen plasma treatment, leading to decrease of water contact angle by only up to 10°, sufficiently improve PLGA adherence to cells, and (2) how will this affect osteoblasts and activation of the immune system? All obtained modified PLGAs had improved hydrophilicity but unaltered roughness (as revealed by water contact angle measurements, X-ray photoelectron spectroscopy, and atomic force microscopy) resulting in significantly improved adhesion of osteoblasts (MG-63) and their low activation. Importantly, macrophages (RAW 264.7), one of the key cells initiating inflammation and bone resorption, responded significantly less vigorously to the modified polymers, expressing/releasing lower amounts of nitric oxide, matrix metalloproteinases (MMP-9), and pro-inflammatory cytokines (TNF-α, IL-6, IL-12p70, IFN-γ, IL-10). We conclude that already slight RIE oxygen plasma modification of PLGA is sufficient to improve its surface properties, and enhance cytocompatibility. Most importantly, this type of modification prevents excessive immune response. © 2015 Wiley Periodicals, Inc.

Electromigration-induced drift in damascene and plasma-etched Al(Cu). II. Mass transport mechanisms in bamboo interconnects

NASA Astrophysics Data System (ADS)

Proost, Joris; Maex, Karen; Delacy, Luc

2000-01-01

We have discussed electromigration (EM)-induced drift in polycrystalline damascene versus reactive ion etched (RIE) Al(Cu) in part I. For polycrystalline Al(Cu), mass transport is well documented to occur through sequential stages : an incubation period (attributed to Cu depletion beyond a critical length) followed by the Al drift stage. In this work, the drift behavior of bamboo RIE and damascene Al(Cu) is analyzed. Using Blech-type test structures, mass transport in RIE lines was shown to proceed both by lattice and interfacial diffusion. The dominating mechanism depends on the Cu distribution in the line, as was evidenced by comparing as-patterned (lattice EM) and RTP-annealed (interface EM) samples. The interfacial EM only occurs at metallic interfaces. In that case, Cu alloying was observed to retard Al interfacial mass transport, giving rise to an incubation time. Although the activation energy for the incubation time was found similar to the one controlling Al lattice drift, for which no incubation time was observed, lattice EM is preferred over interfacial EM because it is insensitive to enhancing geometrical effects upon scaling. When comparing interfacial electromigration in RIE with bamboo damascene Al(Cu), with the incubation time rate controlling for both, the higher EM threshold observed for damascene was shown to be insufficient to compensate for its significantly increased Cu depletion rate, contrary to the case of polycrystalline Al(Cu) interconnects. Two factors were demonstrated to contribute. First, there are more metallic interfaces, intrinsically related to the use of wetting or barrier layers in recessed features. Second, specific to this study, the additional formation of TiAl3 at the trench sidewalls further enhanced the Cu depletion rate, and reduced the rate-controlling incubation time. A separate drift study on RIE via-type test structures indicated that it is very difficult to suppress interfacial mass transport in favor of lattice EM upon TiAl3 formation.

Low-Power RIE of SiO2 in CHF3 To Obtain Steep Sidewalls

NASA Technical Reports Server (NTRS)

Turner, Tasha; Wu, Chi

2003-01-01

A reactive-ion etching (RIE) process has been developed to enable the formation of holes with steep sidewalls in a layer of silicon dioxide that covers a silicon substrate. The holes in question are through the thickness of the SiO2 and are used to define silicon substrate areas to be etched or to be built upon through epitaxial deposition of silicon. The sidewalls of these holes are required to be vertical in order to ensure that the sidewalls of the holes to be etched in the substrate or the sidewalls of the epitaxial deposits, respectively, also turn out to be vertical.

Fabrication of 3D surface structures using grayscale lithography

NASA Astrophysics Data System (ADS)

Stilson, Christopher; Pal, Rajan; Coutu, Ronald A.

2014-03-01

The ability to design and develop 3D microstructures is important for microelectromechanical systems (MEMS) fabrication. Previous techniques used to create 3D devices included tedious steps in direct writing and aligning patterns onto a substrate followed by multiple photolithography steps using expensive, customized equipment. Additionally, these techniques restricted batch processing and placed limits on achievable shapes. Gray-scale lithography enables the fabrication of a variety of shapes using a single photolithography step followed by reactive ion etching (RIE). Micromachining 3D silicon structures for MEMS can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we investigated: using MATLAB for mask designs; feasibility of using 1 μm Heidelberg mask maker to direct write patterns onto photoresist; using RIE processing to etch patterns into a silicon substrate; and the ability to tailor etch selectivity for precise fabrication. To determine etch rates and to obtain desired etch selectivity, parameters such as gas mixture, gas flow, and electrode power were studied. This process successfully demonstrates the ability to use gray-scale lithography and RIE for use in the study of micro-contacts. These results were used to produce a known engineered non-planer surface for testing micro-contacts. Surface structures are between 5 μm and 20 μm wide with varying depths and slopes based on mask design and etch rate selectivity. The engineered surfaces will provide more insight into contact geometries and failure modes of fixed-fixed micro-contacts.

Enhanced light absorption of solar cells and photodetectors by diffraction

DOEpatents

Zaidi, Saleem H.; Gee, James M.

2005-02-22

Enhanced light absorption of solar cells and photodetectors by diffraction is described. Triangular, rectangular, and blazed subwavelength periodic structures are shown to improve performance of solar cells. Surface reflection can be tailored for either broadband, or narrow-band spectral absorption. Enhanced absorption is achieved by efficient optical coupling into obliquely propagating transmitted diffraction orders. Subwavelength one-dimensional structures are designed for polarization-dependent, wavelength-selective absorption in solar cells and photodetectors, while two-dimensional structures are designed for polarization-independent, wavelength-selective absorption therein. Suitable one and two-dimensional subwavelength periodic structures can also be designed for broadband spectral absorption in solar cells and photodetectors. If reactive ion etching (RIE) processes are used to form the grating, RIE-induced surface damage in subwavelength structures can be repaired by forming junctions using ion implantation methods. RIE-induced surface damage can also be removed by post RIE wet-chemical etching treatments.

Fabrication Methods for Adaptive Deformable Mirrors

NASA Technical Reports Server (NTRS)

Toda, Risaku; White, Victor E.; Manohara, Harish; Patterson, Keith D.; Yamamoto, Namiko; Gdoutos, Eleftherios; Steeves, John B.; Daraio, Chiara; Pellegrino, Sergio

2013-01-01

Previously, it was difficult to fabricate deformable mirrors made by piezoelectric actuators. This is because numerous actuators need to be precisely assembled to control the surface shape of the mirror. Two approaches have been developed. Both approaches begin by depositing a stack of piezoelectric films and electrodes over a silicon wafer substrate. In the first approach, the silicon wafer is removed initially by plasmabased reactive ion etching (RIE), and non-plasma dry etching with xenon difluoride (XeF2). In the second approach, the actuator film stack is immersed in a liquid such as deionized water. The adhesion between the actuator film stack and the substrate is relatively weak. Simply by seeping liquid between the film and the substrate, the actuator film stack is gently released from the substrate. The deformable mirror contains multiple piezoelectric membrane layers as well as multiple electrode layers (some are patterned and some are unpatterned). At the piezolectric layer, polyvinylidene fluoride (PVDF), or its co-polymer, poly(vinylidene fluoride trifluoroethylene P(VDF-TrFE) is used. The surface of the mirror is coated with a reflective coating. The actuator film stack is fabricated on silicon, or silicon on insulator (SOI) substrate, by repeatedly spin-coating the PVDF or P(VDFTrFE) solution and patterned metal (electrode) deposition. In the first approach, the actuator film stack is prepared on SOI substrate. Then, the thick silicon (typically 500-micron thick and called handle silicon) of the SOI wafer is etched by a deep reactive ion etching process tool (SF6-based plasma etching). This deep RIE stops at the middle SiO2 layer. The middle SiO2 layer is etched by either HF-based wet etching or dry plasma etch. The thin silicon layer (generally called a device layer) of SOI is removed by XeF2 dry etch. This XeF2 etch is very gentle and extremely selective, so the released mirror membrane is not damaged. It is possible to replace SOI with silicon substrate, but this will require tighter DRIE process control as well as generally longer and less efficient XeF2 etch. In the second approach, the actuator film stack is first constructed on a silicon wafer. It helps to use a polyimide intermediate layer such as Kapton because the adhesion between the polyimide and silicon is generally weak. A mirror mount ring is attached by using adhesive. Then, the assembly is partially submerged in liquid water. The water tends to seep between the actuator film stack and silicon substrate. As a result, the actuator membrane can be gently released from the silicon substrate. The actuator membrane is very flat because it is fixed to the mirror mount prior to the release. Deformable mirrors require extremely good surface optical quality. In the technology described here, the deformable mirror is fabricated on pristine substrates such as prime-grade silicon wafers. The deformable mirror is released by selectively removing the substrate. Therefore, the released deformable mirror surface replicates the optical quality of the underlying pristine substrate.

Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

NASA Astrophysics Data System (ADS)

Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

2018-05-01

A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

NASA Astrophysics Data System (ADS)

Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

2018-04-01

In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

PubMed

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

A simple process to achieve microchannels geometries able to produce hydrodynamic cavitation

NASA Astrophysics Data System (ADS)

Qiu, X.; Cherief, W.; Colombet, D.; Ayela, F.

2017-04-01

We present a simple process to perform microchannels in which cavitating two phase flows are easily producible. Up to now, hydrodynamic cavitation ‘on a chip’ was reached with small flow rates inside microchannels whose micromachining had involved a deep reactive ion etching (D-RIE). The process we present here does not require a D-RIE reactor, as it is only funded on a wet etching of silicon. It leads to a so-called microstep profile, and large cavitating flow rates become possible together with moderate pressure drops.

Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching.

PubMed

Haab, Anna; Mikulics, Martin; Sutter, Eli; Jin, Jiehong; Stoica, Toma; Kardynal, Beata; Rieger, Torsten; Grützmacher, Detlev; Hardtdegen, Hilde

2014-06-27

The formation of nanowires (NWs) by reactive ion etching (RIE) of maskless GaN layers was investigated. The morphological, structural and optical characteristics of the NWs were studied and compared to those of the layer they evolve from. It is shown that the NWs are the result of a defect selective etching process. The evolution of density and length with etching time is discussed. Densely packed NWs with a length of more than 1 μm and a diameter of ∼60 nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The NWs are predominantly free of threading dislocations and show an improvement of optical properties compared to their layer counterpart. The production of NWs via a top down process on non-masked group III-nitride layers is assessed to be very promising for photovoltaic applications.

Durability to oxygen reactive ion etching enhanced by addition of synthesized bis(trimethylsilyl)phenyl-containing (meth)acrylates in ultraviolet nanoimprint lithography

NASA Astrophysics Data System (ADS)

Ito, Shunya; Sato, Hiroki; Tasaki, Yuhei; Watanuki, Kimihito; Nemoto, Nobukatsu; Nakagawa, Masaru

2016-06-01

We investigated the selection of bis(trimethylsilyl)phenyl-containing (meth)acrylates as additives to improve the durability to oxygen reactive ion etching (O2 RIE) of sub-50 nm imprint resist patterns suitable for bubble-defect-free UV nanoimprinting with a readily condensable gas. 2,5-Bis(2-acryloyloxyethoxy)-1,4-bis(trimethylsilyl)benzene, which has a diacrylate chemical structure similar to that of glycerol 1,3-diglycerolate diacrylate used as a base monomer, and 3-(2-methacryloyloxyethoxy)-1-(hydroxylethoxy)-2-propoxy-3,5-bis(trimethylsilyl)benzene, which has a hydroxy group similar to the base monomer, were synthesized taking into consideration the Ohnishi and ring parameters, and the oxidization of the trimethylsilyl moiety to inorganic species during O2 RIE. The addition of the latter liquid additive to the base monomer decreased etching rate owing to the good miscibility of the additive in the base monomer, while the addition of the former crystalline additive caused phase separation after UV nanoimprinting. The latter additive worked as a compatibilizer to the former additive, which is preferred for etching durability improvement. The coexistence of the additives enabled the fabrication of a 45 nm line-and-space resist pattern by UV nanoimprinting, and its residual layer could be removed by O2 RIE.

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices.

PubMed

Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna

2016-04-27

Silicon nanowires (Si NWs) are widely investigated nowadays for implementation in advanced energy conversion and storage devices, as well as many other possible applications. Black silicon (BSi)-NWs are dry etched NWs that merge the advantages related to low-dimensionality with the special industrial appeal connected to deep reactive ion etching (RIE). In fact, RIE is a well established technique in microelectronics manufacturing. However, RIE processing could affect the electrical properties of BSi-NWs by introducing deep states into their forbidden gap. This work applies deep level transient spectroscopy (DLTS) to identify electrically active deep levels and the associated defects in dry etched Si NW arrays. Besides, the successful fitting of DLTS spectra of BSi-NWs-based Schottky barrier diodes is an experimental confirmation that the same theoretical framework of dynamic electronic behavior of deep levels applies in bulk as well as in low dimensional structures like NWs, when quantum confinement conditions do not occur. This has been validated for deep levels associated with simple pointlike defects as well as for deep levels associated with defects with richer structures, whose dynamic electronic behavior implies a more complex picture.

Polymer microfilters with nanostructured surfaces for the culture of circulating cancer cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Makarova, Olga V.; Adams, Daniel L.; Divan, Ralu

There is a critical need to improve the accuracy of drug screening and testing through the development of in vitro culture systems that more effectively mimic the in vivo environment. Surface topographical features on the nanoscale level, in short nanotopography, effect the cell growth patterns, and hence affect cell function in culture. We report the preliminary results on the fabrication, and subsequent cellular growth, of nanoscale surface topography on polymer microfilters using cell lines as a precursor to circulating tumor cells (CTCs). To create various nanoscale features on the microfilter surface, we used reactive ion etching (RIE) with and withoutmore » an etching mask. An anodized aluminum oxide (AAO) membrane fabricated directly on the polymer surface served as an etching mask. Polymer filters with a variety of modified surfaces were used to compare the effects on the culture of cancer cell lines in blank culture wells, with untreated microfilters or with RIE-treated microfilters. We then report the differences of cell shape, phenotype and growth patterns of bladder and glioblastoma cancer cell lines after isolation on the various types of material modifications. Our data suggest that RIE modified polymer filters can isolate model cell lines while retaining ell viability, and that the RIE filter modification allows T24 monolayering cells to proliferate as a structured cluster. Copyright 2016 The Authors. Published by Elsevier B.V. All rights reserved.« less

Process for Smoothing an Si Substrate after Etching of SiO2

NASA Technical Reports Server (NTRS)

Turner, Tasha; Wu, Chi

2003-01-01

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

A Study on Reactive Ion Etching of Barium Strontium Titanate Films Using Mixtures of Argon (Ar), Carbon Tetrafluoride (CF4), and Sulfur Hexafluoride (SF6)

DTIC Science & Technology

2014-07-01

BST) is a complex oxide material with ferroic properties which has been considered for applications ranging from non-volatile memory to microwave...utilizing self-aligned etching to create metal-insulator-metal (MIM) varactors . As part of this method we employed reactive ion etching (RIE) to remove BST...of BST removed vs. etch time for Ar:SF6. .........................................................4 Figure 3. SEM cross-section of varactor showing

Direct observation for atomically flat and ordered vertical {111} side-surfaces on three-dimensionally figured Si(110) substrate using scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Yang, Haoyu; Hattori, Azusa N.; Ohata, Akinori; Takemoto, Shohei; Hattori, Ken; Daimon, Hiroshi; Tanaka, Hidekazu

2017-11-01

A three-dimensional Si{111} vertical side-surface structure on a Si(110) wafer was fabricated by reactive ion etching (RIE) followed by wet-etching and flash-annealing treatments. The side-surface was studied with scanning tunneling microscopy (STM) in atomic scale for the first time, in addition to atomic force microscopy (AFM), scanning electron microscopy (SEM), and low-energy electron diffraction (LEED). AFM and SEM showed flat and smooth vertical side-surfaces without scallops, and STM proved the realization of an atomically-flat 7 × 7-reconstructed structure, under optimized RIE and wet-etching conditions. STM also showed that a step-bunching occurred on the produced {111} side-surface corresponding to a reversely taped side-surface with a tilt angle of a few degrees, but did not show disordered structures. Characteristic LEED patterns from both side- and top-reconstructed surfaces were also demonstrated.

Fabrication of Cantilever-Bump Type Si Probe Card

NASA Astrophysics Data System (ADS)

Park, Jeong-Yong; Lee, Dong-Seok; Kim, Dong-Kwon; Lee, Jong-Hyun

2000-12-01

Probe card is most important part in the test system which selects the good or bad chip of integrated circuit (IC) chips. Silicon vertical probe card is able to test multiple semiconductor chips simultaneously. We presented cantilever-bump type vertical probe card. It was fabricated by dry etching using RIE(reactive ion etching) technique and porous silicon micromachining using silicon direct bonded (SDB) wafer. Cantilevers and bumps were fabricated by isotropic etching using RIE@. 3-dimensional structures were formed by porous silicon micromachining technique using SDB wafer. Contact resistance of fabricated probe card was less than 2 Ω and its life time was more than 200,000 turns. The process used in this work is very simple and reproducible, which has good controllability in the tip dimension and spacing. It is expected that the fabricated probe card can reduce testing time, can promote productivity and enables burn-in test.

WSi2/Si multilayer sectioning by reactive ion etching for multilayer Laue lens fabrication

NASA Astrophysics Data System (ADS)

Bouet, N.; Conley, R.; Biancarosa, J.; Divan, R.; Macrander, A. T.

2010-09-01

Reactive ion etching (RIE) has been employed in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics with a large investment put towards the development of deep RIE. Due to the intrinsic differing chemistries related to reactivity, ion bombardment, and passivation of materials, the development of recipes for new materials or material systems can require intense effort and resources. For silicon in particular, methods have been developed to provide reliable anisotropic profiles with good dimensional control and high aspect ratios1,2,3, high etch rates, and excellent material to mask etch selectivity. A multilayer Laue lens4 is an x-ray focusing optic, which is produced by depositing many layers of two materials with differing electron density in a particular stacking sequence where the each layer in the stack satisfies the Fresnel zone plate law. When this stack is sectioned to allow side-illumination with radiation, the diffracted exiting radiation will constructively interfere at the focal point. Since the first MLLs were developed at Argonne in the USA in 20064, there have been published reports of MLL development efforts in Japan5, and, very recently, also in Germany6. The traditional technique for sectioning multilayer Laue lens (MLL) involves mechanical sectioning and polishing7, which is labor intensive and can induce delamination or structure damage and thereby reduce yield. If a non-mechanical technique can be used to section MLL, it may be possible to greatly shorten the fabrication cycle, create more usable optics from the same amount of deposition substrate, and perhaps develop more advanced structures to provide greater stability or flexibility. Plasma etching of high aspect-ratio multilayer structures will also expand the scope for other types of optics fabrication (such as gratings, zone plates, and so-on). However, well-performing reactive ion etching recipes have been developed for only a small number of materials, and even less recipes exist for concurrent etching of more than one element so a fully material specific process needs to be developed. In this paper, sectioning of WSi2/Si multilayers for MLL fabrication using fluorinated gases is investigated. The main goals were to demonstrate the feasibility of this technique, achievement of high anisotropy, adequate sidewall roughness control and high etching rates. We note that this development for MLL sidewalls should be distinguished from work on improving aspect ratios in traditional Fresnel zone plates. Aspect ratios for MLL sidewalls are not similarly constrained.

From ‘petal effect’ to ‘lotus effect’ on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

NASA Astrophysics Data System (ADS)

Frankiewicz, Christophe; Zoueshtiagh, Farzam; Talbi, Abdelkrim; Streque, Jérémy; Pernod, Philippe; Merlen, Alain

2014-11-01

A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named ‘Silastic S’ for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new process with an electrodeposited thin Nickel (Ni) layer as a mask to obtain a more precise pattern transfer for deep etching (ii) to investigate the etch rates and the etch profiles obtained under various plasma conditions (gas mixture ratios and pressure). The resulting process exhibits etch rates that range from 20 µm h-1 to 40 µm h-1. The process was optimized to obtain anisotropic profiles of the edges. Finally, it is shown that (iii) the wetting contact angle could be easily modified with this process from 103° to 162°, with a hysteresis that ranges from 2° to 140°. The process is, at present, the only reported solution to reproduce the ‘petal effect’ (high contact angle hysteresis value) on a highly flexible substrate. A possibility to control the contact angle hysteresis from the ‘petal effect’ to the ‘lotus effect’ (low contact angle hysteresis value) has been investigated to allow a precise control on the required energy to pin or unpin the contact line of water droplets. This opens multiple possibilities to exploit this elastomer in many microfluidics applications.

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

NASA Astrophysics Data System (ADS)

Myers, John N.; Zhang, Xiaoxian; Huang, Huai; Shobha, Hosadurga; Grill, Alfred; Chen, Zhan

2017-05-01

Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ˜66% of the surface methyl groups and changed the orientation of surface methyl groups from ˜47° to ˜40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ˜55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ˜25 nm of the film and that the dielectric recovery treatment repaired the top ˜9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

Fluorine and oxygen plasma influence on nanoparticle formation and aggregation in metal oxide thin film transistors

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2017-03-01

Despite recent advances in metal oxide thin-film transistor technology, there are no foundry processes available yet for large-scale deployment of metal oxide electronics and photonics, in a similar way as found for silicon based electronics and photonics. One of the biggest challenges of the metal oxide platform is the stability of the fabricated devices. Also, there is wide dispersion on the measured specifications of fabricated TFT, from lot-to-lot and from different research groups. This can be partially explained by the importance of the deposition method and its parameters, which determine thin film microstructure and thus its electrical properties. Furthermore, substrate pretreatment is an important factor, as it may act as a template for material growth. Not so often mentioned, plasma processes can also affect the morphology of deposited films on further deposition steps, such as inducing nanoparticle formation, which strongly impact the conduction mechanism in the channel layer of the TFT. In this study, molybdenum doped indium oxide is sputtered onto ALD deposited HfO2 with or without pattering, and etched by RIE chlorine based processing. Nanoparticle formation is observed when photoresist is removed by oxygen plasma ashing. HfO2 etching in CF4/Ar plasma prior to resist stripping in oxygen plasma promotes the aggregation of nanoparticles into nanosized branched structures. Such nanostructuring is absent when oxygen plasma steps are replaced by chemical wet processing with acetone. Finally, in order to understand the electronic transport effect of the nanoparticles on metal oxide thin film transistors, TFT have been fabricated and electrically characterized.

Resistless lithography - selective etching of silicon with gallium doping regions

NASA Astrophysics Data System (ADS)

Abdullaev, D.; Milovanov, R.; Zubov, D.

2016-12-01

This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

Photolithographic surface micromachining of polydimethylsiloxane (PDMS).

PubMed

Chen, Weiqiang; Lam, Raymond H W; Fu, Jianping

2012-01-21

A major technical hurdle in microfluidics is the difficulty in achieving high fidelity lithographic patterning on polydimethylsiloxane (PDMS). Here, we report a simple yet highly precise and repeatable PDMS surface micromachining method using direct photolithography followed by reactive ion etching (RIE). Our method to achieve surface patterning of PDMS applied an O(2) plasma treatment to PDMS to activate its surface to overcome the challenge of poor photoresist adhesion on PDMS for photolithography. Our photolithographic PDMS surface micromachining technique is compatible with conventional soft lithography techniques and other silicon-based surface and bulk micromachining methods. To illustrate the general application of our method, we demonstrated fabrication of large microfiltration membranes and free-standing beam structures in PDMS.

Photolithographic surface micromachining of polydimethylsiloxane (PDMS)

PubMed Central

Chen, Weiqiang; Lam, Raymond H. W.

2014-01-01

A major technical hurdle in microfluidics is the difficulty in achieving high fidelity lithographic patterning on polydimethylsiloxane (PDMS). Here, we report a simple yet highly precise and repeatable PDMS surface micromachining method using direct photolithography followed by reactive ion etching (RIE). Our method to achieve surface patterning of PDMS applied an O2 plasma treatment to PDMS to activate its surface to overcome the challenge of poor photoresist adhesion on PDMS for photolithography. Our photolithographic PDMS surface micromachining technique is compatible with conventional soft lithography techniques and other silicon-based surface and bulk micromachining methods. To illustrate the general application of our method, we demonstrated fabrications of large microfiltration membranes and free-standing beam structures in PDMS. PMID:22089984

Biofunctionalized silicon nitride platform for sensing applications.

PubMed

Hoi, Hiofan; Rezaie, Salva S; Gong, Lu; Sen, Payel; Zeng, Hongbo; Montemagno, Carlo; Gupta, Manisha

2018-04-15

Silicon nitride (SiN x ) based biosensors have the potential to converge on the technological achievements of semiconductor microfabrication and biotechnology. Development of biofunctionalized SiN x surface and its integration with other devices will allow us to integrate the biosensing capability with probe control, data acquisition and data processing. Here we use the hydrogen plasma generated by inductively coupled plasma-reactive ion etching (ICP-RIE) technique to produce amino-functionality on the surface of SiN x which can then be readily used for biomolecule immobilization. ICP-RIE produces high-density hydrogen ions/radicals at low energy, which produces high-density amino group on the SiN x surface within a short duration of time and with minimal surface damage. In this work, we have demonstrated selective amination of SiN x surface as compared to Si surface. The as-activated SiN x surface can be readily biofunctionalized with both protein and oligonucleotide through covalent immobilization. N-5-azido-2-nitrobenzoyloxysuccinimide, a photoactivable amino reactive bifunctional crosslinker, was used and greater than 90% surface coverage was achieved for protein immobilization. In addition, ssDNA immobilization and hybridization with its complemented strand was shown. Thus, we demonstrate a uniform, reliable, fast and economical technique for creating biofunctionalized SiN x surface that can be used for developing compact high-sensitivity biosensors. Copyright © 2017 Elsevier B.V. All rights reserved.

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOEpatents

Li, Ting [Ventura, CA

2011-04-26

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Control of spectral transmission enhancement properties of random anti-reflecting surface structures fabricated using gold masking

NASA Astrophysics Data System (ADS)

Peltier, Abigail; Sapkota, Gopal; Potter, Matthew; Busse, Lynda E.; Frantz, Jesse A.; Shaw, L. Brandon; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.; Poutous, Menelaos K.

2017-02-01

Random anti-reflecting subwavelength surface structures (rARSS) have been shown to suppress Fresnel reflection and scatter from optical surfaces. The structures effectively function as a gradient-refractive-index at the substrate boundary, and the spectral transmission properties of the boundary have been shown to depend on the structure's statistical properties (diameter, height, and density.) We fabricated rARSS on fused silica substrates using gold masking. A thin layer of gold was deposited on the surface of the substrate and then subjected to a rapid thermal annealing (RTA) process at various temperatures. This RTA process resulted in the formation of gold "islands" on the surface of the substrate, which then acted as a mask while the substrate was dry etched in a reactive ion etching (RIE) process. The plasma etch yielded a fused silica surface covered with randomly arranged "rods" that act as the anti-reflective layer. We present data relating the physical characteristics of the gold "island" statistical populations, and the resulting rARSS "rod" population, as well as, optical scattering losses and spectral transmission properties of the final surfaces. We focus on comparing results between samples processed at different RTA temperatures, as well as samples fabricated without undergoing RTA, to relate fabrication process statistics to transmission enhancement values.

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ting

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE processmore » is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.« less

Micro-Fabricated Perforated Polymer Devices for Long-Term Drug Delivery

DTIC Science & Technology

2011-02-24

conventional manufacturing methods. We have used a biocompatible polymer ( polyimide ) to serve as a reservoir and photolithographically produced microholes for...RIE with ICP source was used to etch holes on polyimide surface. Biocompatible materials Ti, SiO2 and SiNx were studied as mask materials. Ti film...used to fabricate micro holes on the surface of polyimide tubes. Several materials have been used to form the etching mask, including titanium film

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

NASA Astrophysics Data System (ADS)

Latzel, M.; Büttner, P.; Sarau, G.; Höflich, K.; Heilmann, M.; Chen, W.; Wen, X.; Conibeer, G.; Christiansen, S. H.

2017-02-01

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device’s active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 {nm} alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments—chemical etching and alumina deposition—reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation.

PubMed

Latzel, M; Büttner, P; Sarau, G; Höflich, K; Heilmann, M; Chen, W; Wen, X; Conibeer, G; Christiansen, S H

2017-02-03

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE

NASA Astrophysics Data System (ADS)

Tran, N. T.; Breivik, Magnus; Patra, S. K.; Fimland, Bjørn-Ove

2014-05-01

GaSb-based semiconductor diode lasers are promising candidates for light sources working in the mid-infrared wavelength region of 2-5 μm. Using edge emitting lasers with ridge-waveguide structure, light emission with good beam quality can be achieved. Fabrication of the ridge waveguide requires precise etch stop control for optimal laser performance. Simulation results are presented that show the effect of increased confinement in the waveguide when the etch depth is well-defined. In situ reflectance monitoring with a 675 nm-wavelength laser was used to determine the etch stop with high accuracy. Based on the simulations of laser reflectance from a proposed sample, the etching process can be controlled to provide an endpoint depth precision within +/- 10 nm.

Nanotip Carpets as Antireflection Surfaces

NASA Technical Reports Server (NTRS)

Bae, Youngsam; Mobasser, Sohrab; Manohara, Harish; Lee, Choonsup

2008-01-01

Carpet-like random arrays of metal-coated silicon nanotips have been shown to be effective as antireflection surfaces. Now undergoing development for incorporation into Sun sensors that would provide guidance for robotic exploratory vehicles on Mars, nanotip carpets of this type could also have many uses on Earth as antireflection surfaces in instruments that handle or detect ultraviolet, visible, or infrared light. In the original Sun-sensor application, what is required is an array of 50-micron-diameter apertures on what is otherwise an opaque, minimally reflective surface, as needed to implement a miniature multiple-pinhole camera. The process for fabrication of an antireflection nanotip carpet for this application (see Figure 1) includes, and goes somewhat beyond, the process described in A New Process for Fabricating Random Silicon Nanotips (NPO-40123), NASA Tech Briefs, Vol. 28, No. 1 (November 2004), page 62. In the first step, which is not part of the previously reported process, photolithography is performed to deposit etch masks to define the 50-micron apertures on a silicon substrate. In the second step, which is part of the previously reported process, the non-masked silicon area between the apertures is subjected to reactive ion etching (RIE) under a special combination of conditions that results in the growth of fluorine-based compounds in randomly distributed formations, known in the art as "polymer RIE grass," that have dimensions of the order of microns. The polymer RIE grass formations serve as microscopic etch masks during the next step, in which deep reactive ion etching (DRIE) is performed. What remains after DRIE is the carpet of nano - tips, which are high-aspect-ratio peaks, the tips of which have radii of the order of nanometers. Next, the nanotip array is evaporatively coated with Cr/Au to enhance the absorption of light (more specifically, infrared light in the Sun-sensor application). The photoresist etch masks protecting the apertures are then removed by dipping the substrate into acetone. Finally, for the Sun-sensor application, the back surface of the substrate is coated with a 57-nm-thick layer of Cr for attenuation of sunlight.

Wide-bandgap III-Nitride based Second Harmonic Generation

DTIC Science & Technology

2014-10-02

fabrication process for a GaN LPS. Fig. 1: 3-step Fabrication process of a GaN based lateral polar structure. ( a ) Growth of a 20 nm AlN buffer layer...etching of the LT-AlN stripes. This results are shown in Fig. 2 ( a ) and (b). Fig. 2: AFM images of KOH ( a ) and RIE (b) patterned templates for lateral ...was varied between 0.6 - 1.0. FIG. 3: Growth process of AlGaN based Lateral Polar Structures. ( a ) RIE patterning. (b) Growth of HT- AlN. (c

Preparation and performance of broadband antireflective sub-wavelength structures on Ge substrate

NASA Astrophysics Data System (ADS)

Shen, Xiang-Wei; Liu, Zheng-Tang; Li, Yang-Ping; Lu, Hong-Cheng; Xu, Qi-Yuan; Liu, Wen-Ting

2009-01-01

Sub-wavelength structures (SWS) were prepared on Ge substrates through photolithography and reactive ion etching (RIE) technology for broadband antireflective purposes in the long wave infrared (LWIR) waveband of 8-12 μm. Topography of the etched patterns was observed using high resolution optical microscope and atomic force microscope (AFM). Infrared transmission performance of the SWS was investigated by Fourier transform infrared (FTIR) spectrometer. Results show that the etched patterns were of high uniformity and fidelity, the SWS exhibited a good broadband antireflective performance with the increment of the average transmittance which is over 8-12 μm up to 8%.

Design and fabrication of a large area freestanding compressive stress SiO2 optical window

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Sangu, Suguru; Ono, Takahito

2016-07-01

This paper reports the design and fabrication of a 7.2 mm  ×  9.6 mm freestanding compressive stress SiO2 optical window without buckling. An application of the SiO2 optical window with and without liquid penetration has been demonstrated for an optical modulator and its optical characteristic is evaluated by using an image sensor. Two methods for SiO2 optical window fabrication have been presented. The first method is a combination of silicon etching and a thermal oxidation process. Silicon capillaries fabricated by deep reactive ion etching (deep RIE) are completely oxidized to form the SiO2 capillaries. The large compressive stress of the oxide causes buckling of the optical window, which is reduced by optimizing the design of the device structure. A magnetron-type RIE, which is investigated for deep SiO2 etching, is the second method. This method achieves deep SiO2 etching together with smooth surfaces, vertical shapes and a high aspect ratio. Additionally, in order to avoid a wrinkling optical window, the idea of a Peano curve structure has been proposed to achieve a freestanding compressive stress SiO2 optical window. A 7.2 mm  ×  9.6 mm optical window area without buckling integrated with an image sensor for an optical modulator has been successfully fabricated. The qualitative and quantitative evaluations have been performed in cases with and without liquid penetration.

Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam

NASA Astrophysics Data System (ADS)

Wei, Long; Tabuki, Yasushi; Tanigawa, Shoichiro

1993-01-01

Defects in reactive ion-etched Si have been investigated by means of a slow positron beam. A thin carbon-containing film (<30 Å) was formed on the Si surface after reactive ion etching (RIE). Vacancy-type defects, which were estimated to distribute over 1200 Å in depth by numerical fitting using the positron trapping model, were observed in the damaged subsurface region of Si. Aside from ion bombardment, ultraviolet radiation is also presumed to affect the formation of vacancies, interstitials in oxide and the formation of vacancies in Si substrate. The ionization-enhanced diffusion (IED) mechanism is expected to promote the diffusion of vacancies and interstitials into Si substrate.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

NASA Astrophysics Data System (ADS)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

A review on plasma-etch-process induced damage of HgCdTe

NASA Astrophysics Data System (ADS)

Liu, Lingfeng; Chen, Yiyu; Ye, Zhenhua; Ding, Ruijun

2018-05-01

Dry etching techniques with minimal etch induced damage are required to develop highly anisotropic etch for pixel delineation of HgCdTe infrared focal plane arrays (IRFPAs). High density plasma process has become the main etching technique for HgCdTe in the past twenty years, In this paper, high density plasma electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etching of HgCdTe are summarized. Common plasma-etch-process induced type conversion and related mechanisms are reviewed particularly.

Design and grayscale fabrication of beamfanners in a silicon substrate

NASA Astrophysics Data System (ADS)

Ellis, Arthur Cecil

2001-11-01

This dissertation addresses important first steps in the development of a grayscale fabrication process for multiple phase diffractive optical elements (DOS's) in silicon. Specifically, this process was developed through the design, fabrication, and testing of 1-2 and 1-4 beamfanner arrays for 5-micron illumination. The 1-2 beamfanner arrays serve as a test-of- concept and basic developmental step toward the construction of the 1-4 beamfanners. The beamfanners are 50 microns wide, and have features with dimensions of between 2 and 10 microns. The Iterative Annular Spectrum Approach (IASA) method, developed by Steve Mellin of UAH, and the Boundary Element Method (BEM) are the design and testing tools used to create the beamfanner profiles and predict their performance. Fabrication of the beamfanners required the techniques of grayscale photolithography and reactive ion etching (RIE). A 2-3micron feature size 1-4 silicon beamfanner array was fabricated, but the small features and contact photolithographic techniques available prevented its construction to specifications. A second and more successful attempt was made in which both 1-4 and 1-2 beamfanner arrays were fabricated with a 5-micron minimum feature size. Photolithography for the UAH array was contracted to MEMS-Optical of Huntsville, Alabama. A repeatability study was performed, using statistical techniques, of 14 photoresist arrays and the subsequent RIE process used to etch the arrays in silicon. The variance in selectivity between the 14 processes was far greater than the variance between the individual etched features within each process. Specifically, the ratio of the variance of the selectivities averaged over each of the 14 etch processes to the variance of individual feature selectivities within the processes yielded a significance level below 0.1% by F-test, indicating that good etch-to-etch process repeatability was not attained. One of the 14 arrays had feature etch-depths close enough to design specifications for optical testing, but 5- micron IR illumination of the 1-4 and 1-2 beamfanners yielded no convincing results of beam splitting in the detector plane 340 microns from the surface of the beamfanner array.

SU-8 negative photoresist for optical mask manufacturing

NASA Astrophysics Data System (ADS)

Bogdanov, Alexei L.

2000-06-01

The requirements for better control, linearity, and uniformity of critical dimension (CD) on photomasks in fabrication of 180 and 150 nm generation devices result in increasing demand for thinner, more etching durable, and more sensitive e-beam resists. Novolac based resists with chemical amplification have been a choice for their sensitivity and stability during etching. However, difficult CD control due to the acid catalyzer diffusion and quite narrow post exposure bake (PEB) process window are some of the major drawbacks of these resists. SU-8 is recently introduced to the market negative photoresist. High sensitivity, fairly good adhesion properties, and relatively simple processing of SU-8 make it a good substitution for novolac based chemically amplified negative e-beam resists in optical mask manufacturing. The replacement of traditional chemically amplified resists by SU- 8 can increase the process latitude and reduce resist costs. Among the obvious drawbacks of SU-8 are the use of solvent- based developer and demand of oxygen plasma for resist removal. In this paper the use of SU-8 for optical mask manufacturing is reported. All steps of resist film preparation, exposure and development are paid a share of attention. Possibilities to use reactive ion etching (RIE) with oxygen in order to increase resist mask contrast are discussed. Special exposure strategy (pattern outlining) was employed to further improve the edge definition. The resist PEB temperature and time were studied to estimate their weight in overall CD control performance. Specially designed test patterns with 0.25 micrometer design rule could be firmly transferred into a chromium layer both by wet etching and ion milling. Influence of exposure dose variation on the pattern CD change was studied.

Impact of fluorine based reactive chemistry on structure and properties of high moment magnetic material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xiaoyu, E-mail: xiaoyu.yang@wdc.com; Chen, Lifan; Han, Hongmei

The impact of the fluorine-based reactive ion etch (RIE) process on the structural, electrical, and magnetic properties of NiFe and CoNiFe-plated materials was investigated. Several techniques, including X-ray fluorescence, 4-point-probe, BH looper, transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS), were utilized to characterize both bulk film properties such as thickness, average composition, Rs, ρ, Bs, Ms, and surface magnetic “dead” layers' properties such as thickness and element concentration. Experimental data showed that the majority of Rs and Bs changes of these bulk films were due to thickness reduction during exposure to the RIE process. ρ and Msmore » change after taking thickness reduction into account were negligible. The composition of the bulk films, which were not sensitive to surface magnetic dead layers with nano-meter scale, showed minimum change as well. It was found by TEM and EELS analysis that although both before and after RIE there were magnetic dead layers on the top surface of these materials, the thickness and element concentration of the layers were quite different. Prior to RIE, dead layer was actually native oxidation layers (about 2 nm thick), while after RIE dead layer consisted of two sub-layers that were about 6 nm thick in total. Sub-layer on the top was native oxidation layer, while the bottom layer was RIE “damaged” layer with very high fluorine concentration. Two in-situ RIE approaches were also proposed and tested to remove such damaged sub-layers.« less

Diamond nanowires for highly sensitive matrix-free mass spectrometry analysis of small molecules.

PubMed

Coffinier, Yannick; Szunerits, Sabine; Drobecq, Hervé; Melnyk, Oleg; Boukherroub, Rabah

2012-01-07

This paper reports on the use of boron-doped diamond nanowires (BDD NWs) as an inorganic substrate for matrix-free laser desorption/ionization mass spectrometry (LDI-MS) analysis of small molecules. The diamond nanowires are prepared by reactive ion etching (RIE) with oxygen plasma of highly boron-doped (the boron level is 10(19) B cm(-3)) or undoped nanocrystalline diamond substrates. The resulting diamond nanowires are coated with a thin silicon oxide layer that confers a superhydrophilic character to the surface. To minimize droplet spreading, the nanowires were chemically functionalized with octadecyltrichlorosilane (OTS) and then UV/ozone treated to reach a final water contact angle of 120°. The sub-bandgap absorption under UV laser irradiation and the heat confinement inside the nanowires allowed desorption/ionization, most likely via a thermal mechanism, and mass spectrometry analysis of small molecules. A detection limit of 200 zeptomole for verapamil was demonstrated.

MEMS-based thermally-actuated image stabilizer for cellular phone camera

NASA Astrophysics Data System (ADS)

Lin, Chun-Ying; Chiou, Jin-Chern

2012-11-01

This work develops an image stabilizer (IS) that is fabricated using micro-electro-mechanical system (MEMS) technology and is designed to counteract the vibrations when human using cellular phone cameras. The proposed IS has dimensions of 8.8 × 8.8 × 0.3 mm3 and is strong enough to suspend an image sensor. The processes that is utilized to fabricate the IS includes inductive coupled plasma (ICP) processes, reactive ion etching (RIE) processes and the flip-chip bonding method. The IS is designed to enable the electrical signals from the suspended image sensor to be successfully emitted out using signal output beams, and the maximum actuating distance of the stage exceeds 24.835 µm when the driving current is 155 mA. Depending on integration of MEMS device and designed controller, the proposed IS can decrease the hand tremor by 72.5%.

Performance improvements of binary diffractive structures via optimization of the photolithography and dry etch processes

NASA Astrophysics Data System (ADS)

Welch, Kevin; Leonard, Jerry; Jones, Richard D.

2010-08-01

Increasingly stringent requirements on the performance of diffractive optical elements (DOEs) used in wafer scanner illumination systems are driving continuous improvements in their associated manufacturing processes. Specifically, these processes are designed to improve the output pattern uniformity of off-axis illumination systems to minimize degradation in the ultimate imaging performance of a lithographic tool. In this paper, we discuss performance improvements in both photolithographic patterning and RIE etching of fused silica diffractive optical structures. In summary, optimized photolithographic processes were developed to increase critical dimension uniformity and featuresize linearity across the substrate. The photoresist film thickness was also optimized for integration with an improved etch process. This etch process was itself optimized for pattern transfer fidelity, sidewall profile (wall angle, trench bottom flatness), and across-wafer etch depth uniformity. Improvements observed with these processes on idealized test structures (for ease of analysis) led to their implementation in product flows, with comparable increases in performance and yield on customer designs.

Design and fabrication of spectrally selective emitter for thermophotovoltaic system by using nano-imprint lithography

NASA Astrophysics Data System (ADS)

Kim, Jong-Moo; Park, Keum-Hwan; Kim, Da-Som; Hwang, Bo-yeon; Kim, Sun-Kyung; Chae, Hee-Man; Ju, Byeong-Kwon; Kim, Young-Seok

2018-01-01

Thermophotovoltaic (TPV) systems have attracted attention as promising power generation systems that can directly convert the radiant energy produced by the combustion of fuel into electrical energy. However, there is a fundamental limit of their conversion efficiency due to the broadband distribution of the radiant spectrum. To overcome this problem, several spectrally selective thermal emitter technologies have been investigated, including the fabrication of photonic crystal (PhC) structures. In this paper, we present some design rules based on finite-a difference time-domain (FDTD) simulation results for tungsten (W) PhC emitter. The W 2D PhC was fabricated by a simple nano-imprint lithography (NIL) process, and inductive coupled plasma reactive ion etching (ICP-RIE) with an isotropic etching process, the benefits and parameters of which are presented. The fabricated W PhC emitter showed spectrally selective emission near the infrared wavelength range, and the optical properties varied depending on the size of the nano-patterns. The measured results of the fabricated prototype structure correspond well to the simulated values. Finally, compared with the performance of a flat W emitter, the total thermal emitter efficiency was almost 3.25 times better with the 2D W PhC structure.

Atomic precision etch using a low-electron temperature plasma

NASA Astrophysics Data System (ADS)

Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

2016-03-01

Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

Etude fondamentale des mecanismes de gravure par plasma de materiaux de pointe: Application a la fabrication de dispositifs photoniques

NASA Astrophysics Data System (ADS)

Stafford, Luc

Advances in electronics and photonics critically depend upon plasma-based materials processing either for transferring small lithographic patterns into underlying materials (plasma etching) or for the growth of high-quality films. This thesis deals with the etching mechanisms of materials using high-density plasmas. The general objective of this work is to provide an original framework for the plasma-material interaction involved in the etching of advanced materials by putting the emphasis on complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. Based on a synthesis of the descriptions proposed by different authors to explain the etching characteristics of simple materials in noble and halogenated plasma mixtures, we propose comprehensive rate models for physical and chemical plasma etching processes. These models have been successfully validated using experimental data published in literature for Si, Pt, W, SiO2 and ZnO. As an example, we have been able to adequately describe the simultaneous dependence of the etch rate on ion and reactive neutral fluxes and on the ion energy. From an exhaustive experimental investigation of the plasma and etching properties, we have also demonstrated that the validity of the proposed models can be extended to complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. We also reported for the first time physical aspects involved in plasma etching such as the influence of the film microstructural properties on the sputter-etch rate and the influence of the positive ion composition on the ion-assisted desorption dynamics. Finally, we have used our deep investigation of the etching mechanisms of STO films and the resulting excellent control of the etch rate to fabricate a ridge waveguide for photonic device applications. Keywords: plasma etching, sputtering, adsorption and desorption dynamics, high-density plasmas, plasma diagnostics, advanced materials, photonic applications.

Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

2018-03-01

Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

Ultradeep electron cyclotron resonance plasma etching of GaN

DOE PAGES

Harrison, Sara E.; Voss, Lars F.; Torres, Andrea M.; ...

2017-07-25

Here, ultradeep (≥5 μm) electron cyclotron resonance plasma etching of GaN micropillars was investigated. Parametric studies on the influence of the applied radio-frequency power, chlorine content in a Cl 2/Ar etch plasma, and operating pressure on the etch depth, GaN-to-SiO 2 selectivity, and surface morphology were performed. Etch depths of >10 μm were achieved over a wide range of parameters. Etch rates and sidewall roughness were found to be most sensitive to variations in RF power and % Cl 2 in the etch plasma. Selectivities of >20:1 GaN:SiO 2 were achieved under several chemically driven etch conditions where a maximummore » selectivity of ~39:1 was obtained using a 100% Cl 2 plasma. The etch profile and (0001) surface morphology were significantly influenced by operating pressure and the chlorine content in the plasma. Optimized etch conditions yielded >10 μm tall micropillars with nanometer-scale sidewall roughness, high GaN:SiO 2 selectivity, and nearly vertical etch profiles. These results provide a promising route for the fabrication of ultradeep GaN microstructures for use in electronic and optoelectronic device applications. In addition, dry etch induced preferential crystallographic etching in GaN microstructures is also demonstrated, which may be of great interest for applications requiring access to non- or semipolar GaN surfaces.« less

Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials

NASA Astrophysics Data System (ADS)

Bhattarai, Gyanendra; Dhungana, Shailesh; Nordell, Bradley J.; Caruso, Anthony N.; Paquette, Michelle M.; Lanford, William A.; King, Sean W.

2018-05-01

Analytical expressions describing ion-induced sputter or etch processes generally relate the sputter yield to the surface atomic binding energy (Usb) for the target material. While straightforward to measure for the crystalline elemental solids, Usb is more complicated to establish for amorphous and multielement materials due to composition-driven variations and incongruent sublimation. In this regard, we show that for amorphous multielement materials, the ion-driven yield can instead be better understood via a consideration of mechanical rigidity and network topology. We first demonstrate a direct relationship between Usb, bulk modulus, and ion sputter yield for the elements, and then subsequently prove our hypothesis for amorphous multielement compounds by demonstrating that the same relationships exist between the reactive ion etch (RIE) rate and nanoindentation Young's modulus for a series of a -Si Nx :H and a -Si OxCy :H thin films. The impact of network topology is further revealed via application of the Phillips-Thorpe theory of topological constraints, which directly relates the Young's modulus to the mean atomic coordination () for an amorphous solid. The combined analysis allows the trends and plateaus in the RIE rate to be ultimately reinterpreted in terms of the atomic structure of the target material through a consideration of . These findings establish the important underlying role of mechanical rigidity and network topology in ion-solid interactions and provide additional considerations for the design and optimization of radiation-hard materials in nuclear and outer space environments.

GPU based 3D feature profile simulation of high-aspect ratio contact hole etch process under fluorocarbon plasmas

NASA Astrophysics Data System (ADS)

Chun, Poo-Reum; Lee, Se-Ah; Yook, Yeong-Geun; Choi, Kwang-Sung; Cho, Deog-Geun; Yu, Dong-Hun; Chang, Won-Seok; Kwon, Deuk-Chul; Im, Yeon-Ho

2013-09-01

Although plasma etch profile simulation has been attracted much interest for developing reliable plasma etching, there still exist big gaps between current research status and predictable modeling due to the inherent complexity of plasma process. As an effort to address this issue, we present 3D feature profile simulation coupled with well-defined plasma-surface kinetic model for silicon dioxide etching process under fluorocarbon plasmas. To capture the realistic plasma surface reaction behaviors, a polymer layer based surface kinetic model was proposed to consider the simultaneous polymer deposition and oxide etching. Finally, the realistic plasma surface model was used for calculation of speed function for 3D topology simulation, which consists of multiple level set based moving algorithm, and ballistic transport module. In addition, the time consumable computations in the ballistic transport calculation were improved drastically by GPU based numerical computation, leading to the real time computation. Finally, we demonstrated that the surface kinetic model could be coupled successfully for 3D etch profile simulations in high-aspect ratio contact hole plasma etching.

Erosion behavior of CVD 3C silicon carbide in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Brooks, Mitchell R.

2010-11-01

An electrostatic, capacitively coupled Planar Ion Flux (PIF) probe has been developed as a sensor for use in high volume reactive ion etch (RIE) chambers. An important factor in the design is the material used for the probe collection area that is exposed to the plasma. For use in inductively coupled plasma chambers, bulk-deposited, 3C silicon carbide (SiC) was chosen. The primary objective of this work was to characterize the erosion behavior of the probe tip throughout repeated cycling for 100 RF hours (RFH). Surface morphology, roughness, and composition were documented at the beginning and end of cycling. In addition, the mass of the probe tip was documented three times throughout the experiment. This was used to calculate the wear rate which averaged ~100 mug/RFH. Although physical and chemical mechanisms were evident, it appears that preferential sputtering at pre-existing surface defects had the greatest influence on the erosion behavior. Additionally, an investigation into the sudden abnormal electrical behavior of the probe yielded the conclusion that the added capacitance of a deposited film reduces the number of data points in the ion saturation region used to fit the experimental data. This results in excessive values for extracted plasma parameters, most notably the electron temperature. However, this is only a temporary condition if the film can be removed.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer

NASA Astrophysics Data System (ADS)

Brakensiek, Nickolas; Xu, Kui; Sweat, Daniel; Hockey, Mary Ann

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCPs) is one of the most promising patterning technologies for future lithography nodes. However, one of the biggest challenges to DSA is the pattern transfer by plasma etching from BCP to hardmask (HM) because the etch selectivity between BCP and neutral brush layer underneath is usually not high enough to enable robust pattern transfer. This paper will explore the plasma etch conditions of both BCPs and neutral brush layers that may improve selectivity and allow a more robust pattern transfer of DSA patterns into the hardmask layer. The plasma etching parameters that are under investigation include the selection of oxidative or reductive etch chemistries, as well as plasma gas pressure, power, and gas mixture fractions. Investigation into the relationship between BCP/neutral brush layer materials with varying chemical compositions and the plasma etching conditions will be highlighted. The culmination of this work will demonstrate important etch parameters that allow BCPs and neutral brush layers to be etched into the underlying hardmask layer with a large process window.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2013-10-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2012-03-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor

NASA Astrophysics Data System (ADS)

Luan, P.; Knoll, A. J.; Wang, H.; Kondeti, V. S. S. K.; Bruggeman, P. J.; Oehrlein, G. S.

2017-01-01

The surface interaction of a well-characterized time modulated radio frequency (RF) plasma jet with polystyrene, poly(methyl methacrylate) and poly(vinyl alcohol) as model polymers is investigated. The RF plasma jet shows fast polymer etching but mild chemical modification with a characteristic carbonate ester and NO formation on the etched surface. By varying the plasma treatment conditions including feed gas composition, environment gaseous composition, and treatment distance, we find that short lived species, especially atomic O for Ar/1% O2 and 1% air plasma and OH for Ar/1% H2O plasma, play an essential role for polymer etching. For O2 containing plasma, we find that atomic O initiates polymer etching and the etching depth mirrors the measured decay of O atoms in the gas phase as the nozzle-surface distance increases. The etching reaction probability of an O atom ranging from 10-4 to 10-3 is consistent with low pressure plasma research. We also find that adding O2 and H2O simultaneously into Ar feed gas quenches polymer etching compared to adding them separately which suggests the reduction of O and OH density in Ar/O2/H2O plasma.

Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

NASA Astrophysics Data System (ADS)

Tinck, S.; Boullart, W.; Bogaerts, A.

2011-08-01

In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the features during the etch process. Herein we will also demonstrate a test case on how a combination or plasma assisted and plasma free etch techniques has the potential to improve process performance of a 193nm immersion based self aligned quandruple patterning (SAQP) for BEOL compliant films (an example shown in Fig 2). In addition, we will also present on the application of gas etches for (1) profile improvement, (2) selective mandrel pull (3) critical dimension trim of mandrels, with an analysis of advantages over conventional techniques in terms of LER and EPE.

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

PubMed

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogdanova, M. A.; Zyryanov, S. M.; Faculty of Physics, Moscow State University, MSU, Moscow

Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a “virtual IED sensor” which represents “in-situ” IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The “virtualmore » IED sensor” should also involve some external calibration procedure. Applicability and accuracy of the “virtual IED sensor” are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H{sub 2}) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the “virtual IED sensor” based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λ{sub i} (s < λ{sub i}). At higher pressure (when s > λ{sub i}), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low energy range. The effect of electron impact ionization in the sheath on the origin and intensity of low-energy peaks in IED is discussed compared to ion charge-exchange collisions. Obviously, the extrapolation of the “virtual IED sensor” approach to higher pressures requires developing some other sheath models, taking into account both ion and electron collisions and probably including even a model of the whole plasma volume instead of plasma sheath one.« less

High rate dry etching of InGaZnO by BCl3/O2 plasma

NASA Astrophysics Data System (ADS)

Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

2011-08-01

This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

NASA Astrophysics Data System (ADS)

Duluard, C. Y.; Ranson, P.; Pichon, L. E.; Pereira, J.; Oubensaid, E. H.; Lefaucheux, P.; Puech, M.; Dussart, R.

2011-06-01

Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of -20 °C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 µm min-1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around -20 °C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection.

Effects of hard mask etch on final topography of advanced phase shift masks

NASA Astrophysics Data System (ADS)

Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

2017-07-01

Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Hyungjoo; Zhu Weiye; Liu Lei

2013-05-15

Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaNmore » etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.« less

Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

PubMed Central

2014-01-01

In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma

NASA Astrophysics Data System (ADS)

Kim, Hoe Jun; Jeon, Min Hwan; Mishra, Anurag Kumar; Kim, In Jun; Sin, Tae Ho; Yeom, Geun Young

2015-01-01

A SiO2 layer masked with an amorphous carbon layer (ACL) has been etched in an Ar/C4F8 gas mixture with dual frequency capacitively coupled plasmas under variable frequency (13.56-60 MHz)/pulsed rf source power and 2 MHz continuous wave (CW) rf bias power, the effects of the frequency and pulsing of the source rf power on the SiO2 etch characteristics were investigated. By pulsing the rf power, an increased SiO2 etch selectivity was observed with decreasing SiO2 etch rate. However, when the rf power frequency was increased, not only a higher SiO2 etch rate but also higher SiO2 etch selectivity was observed for both CW and pulse modes. A higher CF2/F ratio and lower electron temperature were observed for both a higher source frequency mode and a pulsed plasma mode. Therefore, when the C 1s binding states of the etched SiO2 surfaces were investigated using X-ray photoelectron spectroscopy (XPS), the increase of C-Fx bonding on the SiO2 surface was observed for a higher source frequency operation similar to a pulsed plasma condition indicating the increase of SiO2 etch selectivity over the ACL. The increase of the SiO2 etch rate with increasing etch selectivity for the higher source frequency operation appears to be related to the increase of the total plasma density with increasing CF2/F ratio in the plasma. The SiO2 etch profile was also improved not only by using the pulsed plasma but also by increasing the source frequency.

Effect of oxygen plasma etching on pore size-controlled 3D polycaprolactone scaffolds for enhancing the early new bone formation in rabbit calvaria.

PubMed

Kook, Min-Suk; Roh, Hee-Sang; Kim, Byung-Hoon

2018-05-02

This study was to investigate the effects of O 2 plasma-etching of the 3D polycaprolactone (PCL) scaffold surface on preosteoblast cell proliferation and differentiation, and early new bone formation. The PCL scaffolds were fabricated by 3D printing technique. After O 2 plasma treatment, surface characterizations were examined by scanning electron microscopy, atomic force microscopy, and contact angle. MTT assay was used to determine cell proliferation. To investigate the early new bone formation, rabbits were sacrificed at 2 weeks for histological analyses. As the O 2 plasma etching time is increased, roughness and hydrophilicity of the PCL scaffold surface increased. The cell proliferation and differentiation on plasma-etched samples was significantly increased than on untreated samples. At 2 weeks, early new bone formation in O 2 plasma-etched PCL scaffolds was the higher than that of untreated scaffolds. The O 2 plasma-etched PCL scaffolds showed increased preosteoblast differentiation as well as increased new bone formation.

Inorganic Bi/In thermal resist as a high-etch-ratio patterning layer for CF4/CHF3/O2 plasma etch

NASA Astrophysics Data System (ADS)

Tu, Yuqiang; Chapman, Glenn H.; Peng, Jun

2004-05-01

Bimetallic thin films containing indium and with low eutectic points, such as Bi/In, have been found to form highly sensitive thermal resists. They can be exposed by lasers with a wide range of wavelengths and be developed by diluted RCA2 solutions. The exposed bimetallic resist Bi/In can work as an etch masking layer for alkaline-based (KOH, TMAH and EDP) "wet" Si anisotropic etching. Current research shows that it can also act as a patterning and masking layer for Si and SiO2 plasma "dry" etch using CF4/CHF3. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In, indicating that laser exposure is an oxidation process. Experiment result shows that single metal Indium film and bilayer Sn/In exhibit thermal resist characteristics but at higher exposure levels. They can be developed in diluted RCA2 solution and used as etch mask layers for Si anisotropic etch and plasma etch.

Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hübner, M.; Lang, N.; Röpcke, J.

2015-01-19

Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines andmore » determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.« less

A study of GaN-based LED structure etching using inductively coupled plasma

NASA Astrophysics Data System (ADS)

Wang, Pei; Cao, Bin; Gan, Zhiyin; Liu, Sheng

2011-02-01

GaN as a wide band gap semiconductor has been employed to fabricate optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs). Recently several different dry etching techniques for GaN-based materials have been developed. ICP etching is attractive because of its superior plasma uniformity and strong controllability. Most previous reports emphasized on the ICP etching characteristics of single GaN film. In this study dry etching of GaN-based LED structure was performed by inductively coupled plasmas (ICP) etching with Cl2 as the base gas and BCl3 as the additive gas. The effects of the key process parameters such as etching gases flow rate, ICP power, RF power and chamber pressure on the etching properties of GaN-based LED structure including etching rate, selectivity, etched surface morphology and sidewall was investigated. Etch depths were measured using a depth profilometer and used to calculate the etch rates. The etch profiles were observed with a scanning electron microscope (SEM).

Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO2 plasma etching

NASA Astrophysics Data System (ADS)

Chapman, Glenn H.; Tu, Yuqiang; Peng, Jun

2004-01-01

Bi/In thermal resist is a bilayer structure of Bi over In films which can be exposed by laser with a wide range of wavelengths and can be developed by diluted RCA2 solutions. Current research shows bimetallic resist can work as etch masking layer for both dry plasma etching and wet anisotropic etching. It can act as both patterning and masking layers for Si and SiO2 with plasma "dry" etch using CF4/CHF3. The etching condition is CF4 flow rate 50 sccm, pressure 150 mTorr, and RF power 100 - 600W. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1 nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In. Bi/In also creates etch masking layers for alkaline-based (KOH, TMAH and EDP) "wet" anisotropic bulk Si etch without the need of SiO2 masking steps. The laser exposed Bi/In etches two times more slowly than SiO2. Experiment result shows that single metal Indium film exhibits thermal resist characteristics but at twice the exposure levels. It can be developed in diluted RCA2 solution and used as an etch mask layer for Si anisotropic etch. X-ray diffraction analysis shows that laser exposure causes both Bi and In single film to oxidize. In film may become amorphous when exposed to high laser power.

The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

NASA Astrophysics Data System (ADS)

Laudrel, E.; Tillocher, T.; Meric, Y.; Lefaucheux, P.; Boutaud, B.; Dussart, R.

2018-05-01

Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2/Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µm · min-1. The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.

Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma

NASA Astrophysics Data System (ADS)

Ham, Yong-Hyun; Efremov, Alexander; Min, Nam-Ki; Lee, Hyun Woo; Yun, Sun Jin; Kwon, Kwang-Ho

2009-08-01

A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux.

Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; He, Jim; Choi, Jinhan; Collins, Ken

2011-10-01

Plasma etching for microelectronics fabrication is facing extreme challenges as processes are developed for advanced technological nodes. As device sizes shrink, control of shallow trench isolation (STI) features become more important in both logic and memory devices. Halogen-based inductively coupled plasmas in a pressure range of 20-60 mTorr are typically used to etch STI features. The need for improved performance and shorter development cycles are placing greater emphasis on understanding the underlying mechanisms to meet process specifications. In this work, a surface mechanism for STI etch process will be discussed that couples a fundamental plasma model to experimental etch process measurements. This model utilizes ion/neutral fluxes and energy distributions calculated using the Hybrid Plasma Equipment Model. Experiments are for blanket Si wafers in a Cl2/HBr/O2/N2 plasma over a range of pressures, bias powers, and flow rates of feedstock gases. We found that kinetic treatment of electron transport was critical to achieve good agreement with experiments. The calibrated plasma model is then coupled to a string-based feature scale model to quantify the effect of varying process parameters on the etch profile. We found that the operating parameters strongly influence critical dimensions but have only a subtle impact on the etch depths.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Lee, Jaesoong; Ni, Xianfeng; Leach, Jacob; Özgür, Ümit; Morkoç, Hadis

2011-02-01

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

Etching and oxidation of InAs in planar inductively coupled plasma

NASA Astrophysics Data System (ADS)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Modulation Spectroscopy and Opto Mechanics of Micro Toroidal Resonators

DTIC Science & Technology

2017-08-01

campus at UTRGV, 2) to initiate training of the UTRGV students in nano fabrication and clean room techniques, 3) to conduct experiments with silicon...Email: Volker.Quetschke@utb.edu RPPR Final Report as of 30-Oct-2017 Training Opportunities: During this reporting period PI and his students acquired...Lithography (EBL), Scanning Electron Microscope (SEM), and Reactive Ion-Etching (RIE) techniques. The students involved in this project attended the

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donnelly, Vincent M.; Kornblit, Avinoam

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussionmore » of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.« less

Formation and metrology of dual scale nano-morphology on SF(6) plasma etched silicon surfaces.

PubMed

Boulousis, G; Constantoudis, V; Kokkoris, G; Gogolides, E

2008-06-25

Surface roughness and nano-morphology in SF(6) plasma etched silicon substrates are investigated in a helicon type plasma reactor as a function of etching time and process parameters. The plasma etched surfaces are analyzed by atomic force microscopy. It is found that dual scale nano-roughness is formatted on the silicon surface comprising an underlying nano-roughness and superimposed nano-mounds. Detailed metrological quantification is proposed for the characterization of dual scale surface morphology. As etching proceeds, the mounds become higher, fewer and wider, and the underlying nano-roughness also increases. Increase in wafer temperature leads to smoother surfaces with lower, fewer and wider nano-mounds. A mechanism based on the deposition of etch inhibiting particles during the etching process is proposed for the explanation of the experimental behavior. In addition, appropriately designed experiments are conducted, and they confirm the presence of this mechanism.

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

NASA Astrophysics Data System (ADS)

Oubensaid, E. H.; Duluard, C. Y.; Pichon, L. E.; Pereira, J.; Boufnichel, M.; Lefaucheux, P.; Dussart, R.; Ranson, P.

2009-07-01

The GaN etching by SiCl4 plasma is considered in an ICP tool. By respecting some material limitations, it has been possible to etch the gallium nitride in pure SiCl4 plasma, with an etch rate of 19 nm min-1. This result is comparable to other reported results. Thereafter, the combination of SiCl4 with SF6 and N2 was tested in order to increase the etch rate. The addition of SF6 in the plasma has enabled us to reach an etch rate of 53 nm min-1. However, best results were obtained with the addition of N2, with an increase of the etch rate by a factor of 6. Mass spectrometry was also performed in order to determine the effects of the additional gases. The surface morphology of the GaN was also analysed by scanning electron microscope after etching.

Plasma processing of superconducting radio frequency cavities

NASA Astrophysics Data System (ADS)

Upadhyay, Janardan

The development of plasma processing technology of superconducting radio frequency (SRF) cavities not only provides a chemical free and less expensive processing method, but also opens up the possibility for controlled modification of the inner surfaces of the cavity for better superconducting properties. The research was focused on the transition of plasma etching from two dimensional flat surfaces to inner surfaces of three dimensional (3D) structures. The results could be applicable to a variety of inner surfaces of 3D structures other than SRF cavities. Understanding the Ar/Cl2 plasma etching mechanism is crucial for achieving the desired modification of Nb SRF cavities. In the process of developing plasma etching technology, an apparatus was built and a method was developed to plasma etch a single cell Pill Box cavity. The plasma characterization was done with the help of optical emission spectroscopy. The Nb etch rate at various points of this cavity was measured before processing the SRF cavity. Cylindrical ring-type samples of Nb placed on the inner surface of the outer wall were used to measure the dependence of the process parameters on plasma etching. The measured etch rate dependence on the pressure, rf power, dc bias, temperature, Cl2 concentration and diameter of the inner electrode was determined. The etch rate mechanism was studied by varying the temperature of the outer wall, the dc bias on the inner electrode and gas conditions. In a coaxial plasma reactor, uniform plasma etching along the cylindrical structure is a challenging task due to depletion of the active radicals along the gas flow direction. The dependence of etch rate uniformity along the cylindrical axis was determined as a function of process parameters. The formation of dc self-biases due to surface area asymmetry in this type of plasma and its variation on the pressure, rf power and gas composition was measured. Enhancing the surface area of the inner electrode to reduce the asymmetry was studied by changing the contour of the inner electrode. The optimized contour of the electrode based on these measurements was chosen for SRF cavity processing.

A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, Banat, E-mail: banatgul@gmail.com; Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp; Aman-ur-Rehman, E-mail: amansadiq@gmail.com

Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBrmore » by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.« less

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Plasma-Etching of Spray-Coated Single-Walled Carbon Nanotube Films for Biointerfaces

NASA Astrophysics Data System (ADS)

Kim, Joon Hyub; Lee, Jun-Yong; Min, Nam Ki

2012-08-01

We present an effective method for the batch fabrication of miniaturized single-walled carbon nanotube (SWCNT) film electrodes using oxygen plasma etching. We adopted the approach of spray-coating for good adhesion of the SWCNT film onto a pre-patterned Pt support and used O2 plasma patterning of the coated films to realize efficient biointerfaces between SWCNT surfaces and biomolecules. By these approaches, the SWCNT film can be easily integrated into miniaturized electrode systems. To demonstrate the effectiveness of plasma-etched SWCNT film electrodes as biointerfaces, Legionella antibody was selected as analysis model owing to its considerable importance to electrochemical biosensors and was detected using plasma-etched SWCNT film electrodes and a 3,3',5,5'-tetramethyl-benzidine dihydrochloride/horseradish peroxidase (TMB/HRP) catalytic system. The response currents increased with increasing concentration of Legionella antibody. This result indicates that antibodies were effectively immobilized on plasma-etched and activated SWCNT surfaces.

Plasma/Neutral-Beam Etching Apparatus

NASA Technical Reports Server (NTRS)

Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

1989-01-01

Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

New frontiers of atomic layer etching

NASA Astrophysics Data System (ADS)

Sherpa, Sonam D.; Ranjan, Alok

2018-03-01

Interest in atomic layer etching (ALE) has surged recently because it offers several advantages over continuous or quasicontinuous plasma etching. These benefits include (1) independent control of ion energy, ion flux, and radical flux, (2) flux-independent etch rate that mitigates the iso-dense loading effects, and (3) ability to control the etch rate with atomic or nanoscale precision. In addition to these benefits, we demonstrate an area-selective etching for maskless lithography as a new frontier of ALE. In this paper, area-selective etching refers to the confinement of etching into the specific areas of the substrate. The concept of area-selective etching originated during our studies on quasi-ALE of silicon nitride which consists of sequential exposure of silicon nitride to hydrogen and fluorinated plasma. The findings of our studies reported in this paper suggest that it may be possible to confine the etching into specific areas of silicon nitride without using any mask by replacing conventional hydrogen plasma with a localized source of hydrogen ions.

Temperature Compensation of Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

DTIC Science & Technology

2012-12-14

PZT ceramic plate [40]. Since then Lamb wave devices utilizing the lowest-order antisymmetric (A0) mode propagation in ZnO thin plate were widely...Million Pt Platinum PVDF Polyvinylidene Flouride PZT Lead Zirconium Titanate Q Quality Factor R Resistor RIE Reactive Ion Etching Rm Motional...GaAs), silicon carbide (SiC), langasite (LGS), lead zirconium titanate ( PZT ), and polyvinylidene flouride (PVDF). Each piezoelectric material has

SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect

NASA Astrophysics Data System (ADS)

Ooka, Masahiro; Yokoyama, Shin

2004-06-01

The etching of contact holes of 0.1 μm size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the radio frequency (rf) power is extended.

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

NASA Astrophysics Data System (ADS)

Ono, Kouichi; Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji

2017-10-01

Atomic- or nanometer-scale roughness on feature surfaces has become an important issue to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases, smoothing of initially rough surfaces is required for planarization of film surfaces, and controlled surface roughening is required for maskless fabrication of organized nanostructures on surfaces. An understanding, under what conditions plasma etching results in surface roughening and/or smoothing and what are the mechanisms concerned, is of great technological as well as fundamental interest. In this article, we review recent developments in the experimental and numerical study of the formation and evolution of surface roughness (or surface morphology evolution such as roughening, smoothing, and ripple formation) during plasma etching of Si, with emphasis being placed on a deeper understanding of the mechanisms or plasma-surface interactions that are responsible for. Starting with an overview of the experimental and theoretical/numerical aspects concerned, selected relevant mechanisms are illustrated and discussed primarily on the basis of systematic/mechanistic studies of Si etching in Cl-based plasmas, including noise (or stochastic roughening), geometrical shadowing, surface reemission of etchants, micromasking by etch inhibitors, and ion scattering/chanelling. A comparison of experiments (etching and plasma diagnostics) and numerical simulations (Monte Carlo and classical molecular dynamics) indicates a crucial role of the ion scattering or reflection from microscopically roughened feature surfaces on incidence in the evolution of surface roughness (and ripples) during plasma etching; in effect, the smoothing/non-roughening condition is characterized by reduced effects of the ion reflection, and the roughening-smoothing transition results from reduced ion reflections caused by a change in the predominant ion flux due to that in plasma conditions. Smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces during etching (normal ion incidence) and formation of surface ripples by plasma etching (off-normal ion incidence) are also presented and discussed in this context.

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Weiye; Sridhar, Shyam; Liu, Lei

2014-05-28

Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) andmore » Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.« less

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

PubMed

Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

2017-09-13

Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Simulation of SiO2 etching in an inductively coupled CF4 plasma

NASA Astrophysics Data System (ADS)

Xu, Qing; Li, Yu-Xing; Li, Xiao-Ning; Wang, Jia-Bin; Yang, Fan; Yang, Yi; Ren, Tian-Ling

2017-02-01

Plasma etching technology is an indispensable processing method in the manufacturing process of semiconductor devices. Because of the high fluorine/carbon ratio of CF4, the CF4 gas is often used for etching SiO2. A commercial software ESI-CFD is used to simulate the process of plasma etching with an inductively coupled plasma model. For the simulation part, CFD-ACE is used to simulate the chamber, and CFD-TOPO is used to simulate the surface of the sample. The effects of chamber pressure, bias voltage and ICP power on the reactant particles were investigated, and the etching profiles of SiO2 were obtained. Simulation can be used to predict the effects of reaction conditions on the density, energy and angular distributions of reactant particles, which can play a good role in guiding the etching process.

More vertical etch profile using a Faraday cage in plasma etching

NASA Astrophysics Data System (ADS)

Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

1999-05-01

Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

NASA Astrophysics Data System (ADS)

Takei, Norihisa; Shinoda, Fumiya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi; Ohmi, Hiromasa

2018-06-01

We have been developing an on-site silane (SiH4) generator based on use of the chemical etching reaction between solid silicon (Si) and the high-density H atoms that are generated in high-pressure H2 plasma. In this study, we have developed a slit-type plasma source for high-efficiency SiH4 generation. High-density H2 plasma was generated in a narrow slit-type discharge gap using a 2.45 GHz microwave power supply. The plasma’s optical emission intensity distribution along the slit was measured and the resulting distribution was reflected by both the electric power distribution and the hydrogen gas flow. Because the Si etching rate strongly affects the SiH4 generation rate, the Si etching behavior was investigated with respect to variations in the experimental parameters. The weight etch rate increased monotonically with increasing input microwave power. However, the weight etch rate decreased with increasing H2 pressure and an increasing plasma gap. This reduction in the etch rate appears to be related to shrinkage of the plasma generation area because increased input power is required to maintain a constant plasma area with increasing H2 pressure and the increasing plasma gap. Additionally, the weight etch rate also increases with increasing H2 flow rate. The SiH4 generation rate of the slit-type plasma source was also evaluated using gas-phase Fourier transform infrared absorption spectroscopy and the material utilization efficiencies of both Si and the H2 gas for SiH4 gas formation were discussed. The main etch product was determined to be SiH4 and the developed plasma source achieved a SiH4 generation rate of 10 sccm (standard cubic centimeters per minute) at an input power of 900 W. In addition, the Si utilization efficiency exceeded 60%.

Use of KRS-XE positive chemically amplified resist for optical mask manufacturing

NASA Astrophysics Data System (ADS)

Ashe, Brian; Deverich, Christina; Rabidoux, Paul A.; Peck, Barbara; Petrillo, Karen E.; Angelopoulos, Marie; Huang, Wu-Song; Moreau, Wayne M.; Medeiros, David R.

2002-03-01

The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch process to produce patterns in chrome. ZEP was employed for dry etch processing to meet the requirements of shrinking dimensions, optical proximity corrections and phase shift masks. However, ZEP offers low contrast, marginal etch resistance, organic solvent development, and concerns regarding resist heating with its high dose requirements1. Chemically Amplified Resist (CAR) systems are a very good choice for dimensions less than 180nm because of their high sensitivity and contrast, high resolution, dry etch resistance, aqueous development, and process latitude2. KRS-XE was developed as a high contrast CA resist based on ketal protecting groups that eliminate the need for post exposure bake (PEB). This resist can be used for a variety of electron beam exposures, and improves the capability to fabricate masks for devices smaller than 180nm. Many factors influence the performance of resists in mask making such as post apply bake, exposure dose, resist develop, and post exposure bake. These items will be discussed as well as the use of reactive ion etching (RIE) selectivity and pattern transfer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Yunpeng; Sawin, Herbert H.

The impact of etching kinetics and etching chemistries on surface roughening was investigated by etching thermal silicon dioxide and low-k dielectric coral materials in C{sub 4}F{sub 8}/Ar plasma beams in an inductive coupled plasma beam reactor. The etching kinetics, especially the angular etching yield curves, were measured by changing the plasma pressure and the feed gas composition which influence the effective neutral-to-ion flux ratio during etching. At low neutral-to-ion flux ratios, the angular etching yield curves are sputteringlike, with a peak around 60 deg. -70 deg. off-normal angles; the surface at grazing ion incidence angles becomes roughened due to ionmore » scattering related ion-channeling effects. At high neutral-to-ion flux ratios, ion enhanced etching dominates and surface roughening at grazing angles is mainly caused by the local fluorocarbon deposition induced micromasking mechanism. Interestingly, the etched surfaces at grazing angles remain smooth for both films at intermediate neutral-to-ion flux ratio regime. Furthermore, the oxygen addition broadens the region over which the etching without roughening can be performed.« less

Perforated semiconductor neutron detectors for battery operated portable modules

NASA Astrophysics Data System (ADS)

McGregor, Douglas S.; Bellinger, Steven L.; Bruno, David; McNeil, Walter J.; Patterson, Eric; Shultis, J. Kenneth; Solomon, C. J.; Unruh, Troy

2007-09-01

Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma (ICP) reactive ion etching (RIE) and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The prototype devices delivered over 3.8% thermal neutron detection efficiency while operating on only 15 volts. The highest efficiency devices thus far have delivered over 12% thermal neutron detection efficiency. The miniature devices are 5.6 mm in diameter and require minimal power to operate, ranging from 3.3 volts to 15 volts, depending upon the amplifying electronics. The battery operated devices have been incorporated into compact modules with a digital readout. Further, the new modules have incorporated wireless readout technology and can be monitored remotely. The neutron detection modules can be used for neutron dosimetry and neutron monitoring. When coupled with high-density polyethylene, the detectors can be used to measure fission neutrons from spontaneous fission sources. Monto Carlo analysis indicates that the devices can be used in cargo containers as a passive search tool for spontaneous fission sources, such as 240Pu. Measurements with a 252Cf source are being conducted for verification.

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

DOEpatents

Ruby, Douglas S.; Schubert, William K.; Gee, James M.

1999-01-01

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

DOEpatents

Ruby, D.S.; Schubert, W.K.; Gee, J.M.

1999-02-16

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

PubMed Central

Kawakami, Masatoshi; Metzler, Dominik; Li, Chen; Oehrlein, Gottlieb S.

2016-01-01

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C4F8 injection. The C4F8 and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number. PMID:27375342

Simulations of Control Schemes for Inductively Coupled Plasma Sources

NASA Astrophysics Data System (ADS)

Ventzek, P. L. G.; Oda, A.; Shon, J. W.; Vitello, P.

1997-10-01

Process control issues are becoming increasingly important in plasma etching. Numerical experiments are an excellent test-bench for evaluating a proposed control system. Models are generally reliable enough to provide information about controller robustness, fitness of diagnostics. We will present results from a two dimensional plasma transport code with a multi-species plasma chemstry obtained from a global model. [1-2] We will show a correlation of external etch parameters (e.g. input power) with internal plasma parameters (e.g. species fluxes) which in turn are correlated with etch results (etch rate, uniformity, and selectivity) either by comparison to experiment or by using a phenomenological etch model. After process characterization, a control scheme can be evaluated since the relationship between the variable to be controlled (e.g. uniformity) is related to the measurable variable (e.g. a density) and external parameter (e.g. coil current). We will present an evaluation using the HBr-Cl2 system as an example. [1] E. Meeks and J. W. Shon, IEEE Trans. on Plasma Sci., 23, 539, 1995. [2] P. Vitello, et al., IEEE Trans. on Plasma Sci., 24, 123, 1996.

Extreme wettability of nanostructured glass fabricated by non-lithographic, anisotropic etching

PubMed Central

Yu, Eusun; Kim, Seul-Cham; Lee, Heon Ju; Oh, Kyu Hwan; Moon, Myoung-Woon

2015-01-01

Functional glass surfaces with the properties of superhydrophobicity/or superhydrohydrophilicity, anti-condensation or low reflectance require nano- or micro-scale roughness, which is difficult to fabricate directly on glass surfaces. Here, we report a novel non-lithographic method for the fabrication of nanostructures on glass; this method introduces a sacrificial SiO2 layer for anisotropic plasma etching. The first step was to form nanopillars on SiO2 layer-coated glass by using preferential CF4 plasma etching. With continuous plasma etching, the SiO2 pillars become etch-resistant masks on the glass; thus, the glass regions covered by the SiO2 pillars are etched slowly, and the regions with no SiO2 pillars are etched rapidly, resulting in nanopatterned glass. The glass surface that is etched with CF4 plasma becomes superhydrophilic because of its high surface energy, as well as its nano-scale roughness and high aspect ratio. Upon applying a subsequent hydrophobic coating to the nanostructured glass, a superhydrophobic surface was achieved. The light transmission of the glass was relatively unaffected by the nanostructures, whereas the reflectance was significantly reduced by the increase in nanopattern roughness on the glass. PMID:25791414

Enhancement of CNT/PET film adhesion by nano-scale modification for flexible all-solid-state supercapacitors

NASA Astrophysics Data System (ADS)

Kang, Yu Jin; Chung, Haegeun; Kim, Min-Seop; Kim, Woong

2015-11-01

We demonstrate the fabrication of high-integrity flexible supercapacitors using carbon nanotubes (CNTs), polyethylene terephthalate (PET) films, and ion gels. Although both CNTs and PET films are attractive materials for flexible electronics, they have poor adhesion properties. In this work, we significantly improve interfacial adhesion by introducing nanostructures at the interface of the CNT and PET layers. Simple reactive ion etching (RIE) of the PET substrates generates nano-scale roughness on the PET surface. RIE also induces hydrophilicity on the PET surface, which further enhances adhesive strength. The improved adhesion enables high integrity and excellent flexibility of the fabricated supercapacitors, demonstrated over hundreds of bending cycles. Furthermore, the supercapacitors show good cyclability with specific capacitance retention of 87.5% after 10,000 galvanostatic charge-discharge (GCD) cycles. Our demonstration may be important for understanding interfacial adhesion properties in nanoscale and for producing flexible, high-integrity, high-performance energy storage systems.

Opportunities of CMOS-MEMS integration through LSI foundry and open facility

NASA Astrophysics Data System (ADS)

Mita, Yoshio; Lebrasseur, Eric; Okamoto, Yuki; Marty, Frédéfic; Setoguchi, Ryota; Yamada, Kentaro; Mori, Isao; Morishita, Satoshi; Imai, Yoshiaki; Hosaka, Kota; Hirakawa, Atsushi; Inoue, Shu; Kubota, Masanori; Denoual, Matthieu

2017-06-01

Since the 2000s, several countries have established micro- and nanofabrication platforms for the research and education community as national projects. By combining such platforms with VLSI multichip foundry services, various integrated devices, referred to as “CMOS-MEMS”, can be realized without constructing an entire cleanroom. In this paper, we summarize MEMS-last postprocess schemes for CMOS devices on a bulk silicon wafer as well as on a silicon-on-insulator (SOI) wafer using an open-access cleanroom of the Nanotechnology Platform of MEXT Japan. The integration devices presented in this article are free-standing structures and postprocess isolated LSI devices. Postprocess issues are identified with their solutions, such as the reactive ion etching (RIE) lag for dry release and the impact of the deep RIE (DRIE) postprocess on transistor characteristics. Integration with nonsilicon materials is proposed as one of the future directions.

O2 Plasma Etching and Antistatic Gun Surface Modifications for CNT Yarn Microelectrode Improve Sensitivity and Antifouling Properties.

PubMed

Yang, Cheng; Wang, Ying; Jacobs, Christopher B; Ivanov, Ilia N; Venton, B Jill

2017-05-16

Carbon nanotube (CNT) based microelectrodes exhibit rapid and selective detection of neurotransmitters. While different fabrication strategies and geometries of CNT microelectrodes have been characterized, relatively little research has investigated ways to selectively enhance their electrochemical properties. In this work, we introduce two simple, reproducible, low-cost, and efficient surface modification methods for carbon nanotube yarn microelectrodes (CNTYMEs): O 2 plasma etching and antistatic gun treatment. O 2 plasma etching was performed by a microwave plasma system with oxygen gas flow and the optimized time for treatment was 1 min. The antistatic gun treatment flows ions by the electrode surface; two triggers of the antistatic gun was the optimized number on the CNTYME surface. Current for dopamine at CNTYMEs increased 3-fold after O 2 plasma etching and 4-fold after antistatic gun treatment. When the two treatments were combined, the current increased 12-fold, showing the two effects are due to independent mechanisms that tune the surface properties. O 2 plasma etching increased the sensitivity due to increased surface oxygen content but did not affect surface roughness while the antistatic gun treatment increased surface roughness but not oxygen content. The effect of tissue fouling on CNT yarns was studied for the first time, and the relatively hydrophilic surface after O 2 plasma etching provided better resistance to fouling than unmodified or antistatic gun treated CNTYMEs. Overall, O 2 plasma etching and antistatic gun treatment improve the sensitivity of CNTYMEs by different mechanisms, providing the possibility to tune the CNTYME surface and enhance sensitivity.

The endpoint detection technique for deep submicrometer plasma etching

NASA Astrophysics Data System (ADS)

Wang, Wei; Du, Zhi-yun; Zeng, Yong; Lan, Zhong-went

2009-07-01

The availability of reliable optical sensor technology provides opportunities to better characterize and control plasma etching processes in real time, they could play a important role in endpoint detection, fault diagnostics and processes feedback control and so on. The optical emission spectroscopy (OES) method becomes deficient in the case of deep submicrometer gate etching. In the newly developed high density inductively coupled plasma (HD-ICP) etching system, Interferometry endpoint (IEP) is introduced to get the EPD. The IEP fringe count algorithm is investigated to predict the end point, and then its signal is used to control etching rate and to call end point with OES signal in over etching (OE) processes step. The experiment results show that IEP together with OES provide extra process control margin for advanced device with thinner gate oxide.

Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2

NASA Astrophysics Data System (ADS)

Hansen, S. G.; Luckman, G.; Nieman, George C.; Colson, Steven D.

1990-09-01

Laser-induced fluorescence of CF2 is used to monitor heterogeneous processes in ≊300 mTorr CF4/O2 plasmas. CF2 is rapidly removed at fluorinated copper and silver surfaces in 13.56-MHz rf discharges as judged by a distinct dip in its spatial distribution. These metals, when employed as etch masks, are known to accelerate plasma etching of silicon, and the present results suggest catalytic dehalogenation of CF2 is involved in this process. In contrast, aluminum and silicon dioxide exhibit negligible reactivity with CF2, which suggests that aluminum masks will not appreciably accelerate silicon etching and that ground state CF2 does not efficiently etch silicon dioxide. Measurement of CF2 decay in a pulsed discharge coupled with direct laser sputtering of metal into the gas phase indicates the interaction between CF2 and the active metals is purely heterogeneous. Aluminum does, however, exhibit homogeneous reactivity with CF2. Redistribution of active metal by plasma sputtering readily occurs; silicon etch rates may also be enhanced by the metal's presence on the silicon surface. Polymers contribute CF2 to the plasma as they etch. The observation of an induction period suggests fluorination of the polymer surface is the first step in its degradation. Polymeric etch masks can therefore depress the silicon etch rate by removal of F atoms, the primary etchants.

Wafer edge overlay control solution for N7 and beyond

NASA Astrophysics Data System (ADS)

van Haren, Richard; Calado, Victor; van Dijk, Leon; Hermans, Jan; Kumar, Kaushik; Yamashita, Fumiko

2018-03-01

Historically, the on-product overlay performance close to the wafer edge is lagging with respect to the inner part of the wafer. The reason for this is that wafer processing is less controlled close to the wafer edge as opposed to the rest of the wafer. It is generally accepted that Chemical Vapor Deposition (CVD) of stressed layers that cause wafer warp, wafer table contamination, Chemical Mechanical Polishing (CMP), and Reactive Ion Etch (RIE) may deteriorate the overlay performance and/or registration close to the wafer edge. For the N7 technology node and beyond, it is anticipated that the tight on-product overlay specification is required across the full wafer which includes the edge region. In this work, we highlight one contributor that may negatively impact the on-product overlay performance, namely the etch step. The focus will be mainly on the wafer edge region but the remaining part of the wafer is considered as well. Three use-cases are examined: multiple Litho-Etch steps (LEn), contact hole layer etch, and the copper dual damascene etch. We characterize the etch contribution by considering the overlay measurement after resist development inspect (ADI) and after etch inspect (AEI). We show that the Yieldstar diffraction based overlay (μDBO) measurements can be utilized to characterize the etch contribution to the overlay budget. The effects of target asymmetry as well as overlay shifts are considered and compared with SEM measurements. Based on the results above, we propose a control solution aiming to reduce or even eliminate the delta between ADI and AEI. By doing so, target/mark to device offsets due to etch might be avoided.

Bi-stage time evolution of nano-morphology on inductively coupled plasma etched fused silica surface caused by surface morphological transformation

NASA Astrophysics Data System (ADS)

Jiang, Xiaolong; Zhang, Lijuan; Bai, Yang; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Liao, Wei; Zhang, Chuanchao; Yang, Ke; Chen, Jing; Jiang, Yilan; Yuan, Xiaodong

2017-07-01

In this work, we experimentally investigate the surface nano-roughness during the inductively coupled plasma etching of fused silica, and discover a novel bi-stage time evolution of surface nano-morphology. At the beginning, the rms roughness, correlation length and nano-mound dimensions increase linearly and rapidly with etching time. At the second stage, the roughening process slows down dramatically. The switch of evolution stage synchronizes with the morphological change from dual-scale roughness comprising long wavelength underlying surface and superimposed nano-mounds to one scale of nano-mounds. A theoretical model based on surface morphological change is proposed. The key idea is that at the beginning, etched surface is dual-scale, and both larger deposition rate of etch inhibitors and better plasma etching resistance at the surface peaks than surface valleys contribute to the roughness development. After surface morphology transforming into one-scale, the difference of plasma resistance between surface peaks and valleys vanishes, thus the roughening process slows down.

Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

2016-08-01

Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

Optimal design and fabrication of ring resonator composed of Ge02-doped silica waveguides for IOG

NASA Astrophysics Data System (ADS)

Guo, Lijun; Shi, Bangren; Chen, Chen; Lv, Hao; Zhao, Zhenming; Zhao, Meng

2009-07-01

The ring resonator is the core sensing element in the resonant integration optical gyroscope (IOG) . Its performances influence the minimum resolution and the error items of gyroscope directly and it is the key of the design and manufacturing. This paper presents optimal design of ring resonator composed of Ge02 -doped silica waveguides fabricated on silicon substrates using wide angle beam propagation method (WA-BPM). The characteristic of the light propagating across the ring resonator is analyzed. According to the design results, we succeed in fabricating the ring resonator by Plasma Enhanced Chemical Vapor Deposition (PECVD) method and Reactive Ion Etching (RIE) technology. In order to characterize the ring resonator, an optical measurement setup is built, fiber laser line-width is 50 kHz, detector responsibility is 0.95A/W and integral time is 10s. By testing, propagation loss and total loss of ring resonator are 0.02dB/cm and 0.1dB/circuit respectively. Observed from the resonance curve, a finesse of 12.5.

Fabrication of a Horizontal and a Vertical Large Surface Area Nanogap Electrochemical Sensor

PubMed Central

Hammond, Jules L.; Rosamond, Mark C.; Sivaraya, Siva; Marken, Frank; Estrela, Pedro

2016-01-01

Nanogap sensors have a wide range of applications as they can provide accurate direct detection of biomolecules through impedimetric or amperometric signals. Signal response from nanogap sensors is dependent on both the electrode spacing and surface area. However, creating large surface area nanogap sensors presents several challenges during fabrication. We show two different approaches to achieve both horizontal and vertical coplanar nanogap geometries. In the first method we use electron-beam lithography (EBL) to pattern an 11 mm long serpentine nanogap (215 nm) between two electrodes. For the second method we use inductively-coupled plasma (ICP) reactive ion etching (RIE) to create a channel in a silicon substrate, optically pattern a buried 1.0 mm × 1.5 mm electrode before anodically bonding a second identical electrode, patterned on glass, directly above. The devices have a wide range of applicability in different sensing techniques with the large area nanogaps presenting advantages over other devices of the same family. As a case study we explore the detection of peptide nucleic acid (PNA)−DNA binding events using dielectric spectroscopy with the horizontal coplanar device. PMID:27983655

Studies and testing of antireflective (AR) coatings for soda-lime glass

NASA Technical Reports Server (NTRS)

Pastirik, E. M.; Sparks, T. G.; Coleman, M. G.

1978-01-01

Processes for producing antireflection films on glass are concentrated in three areas: acid etching of glass, plasma etching of glass, and acid development of sodium silicate films on glass. The best transmission was achieved through the acid etching technique, while the most durable films were produced from development of sodium silicate films. Control of the acid etching technique is presently inadequate for production implementation. While films having excellent antireflective properties were fabricated by plasma etching techniques, all were water soluble.

Selective dry etching of silicon containing anti-reflective coating

NASA Astrophysics Data System (ADS)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic and Si layers) post pattern transfer, in a multi-layer structure will be discussed.

Development and evaluation of magnesium oxide-based ceramics for chamber parts in mass-production plasma etching equipment

NASA Astrophysics Data System (ADS)

Kasashima, Yuji; Tsutsumi, Kota; Mitomi, Shinzo; Uesugi, Fumihiko

2017-06-01

In mass-production plasma etching equipment, the corrosion of ceramic chamber parts reduces the production yield of LSI and overall equipment effectiveness (OEE) owing to contamination, short useful life, and particle generation. Novel ceramics that can improve the production yield and OEE are highly required. We develop magnesium oxide (MgO)-based ceramics and evaluate them under mass-production plasma etching conditions. The results of this study indicate that the developed MgO-based ceramics with high mechanical properties and low electric resistivity have a higher resistance to corrosion in plasma etching using CF4 gas than Si and conventional ceramic materials such as aluminum oxide and yttrium oxide.

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

NASA Astrophysics Data System (ADS)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

NASA Astrophysics Data System (ADS)

Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

2013-02-01

The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawakami, Masatoshi; Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu

2016-07-15

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change inmore » the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.« less

Plasma processing of large curved surfaces for superconducting rf cavity modification

DOE PAGES

Upadhyay, J.; Im, Do; Popović, S.; ...

2014-12-15

In this study, plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl 2/Ar plasma etching has to address several crucial parameters which influence the etching rate and surface roughness, and eventually, determine cavity performance. This includes dependence of the process on the frequency of the RF generator, gas pressure, power level, the driven (inner) electrode configuration, and the chlorine concentration in the gas mixture during plasma processing. To demonstrate surface layer removal in the asymmetric non-planar geometry, we are using a simplemore » cylindrical cavity with 8 ports symmetrically distributed over the cylinder. The ports are used for diagnosing the plasma parameters and as holders for the samples to be etched. The etching rate is highly correlated with the shape of the inner electrode, radio-frequency (RF) circuit elements, chlorine concentration in the Cl 2/Ar gas mixtures, residence time of reactive species and temperature of the cavity. Using cylindrical electrodes with variable radius, large-surface ring-shaped samples and d.c. bias implementation in the external circuit we have demonstrated substantial average etching rates and outlined the possibility to optimize plasma properties with respect to maximum surface processing effect.« less

Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hu; Muraki, Yu; Karahashi, Kazuhiro

2015-07-15

Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +}more » or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.« less

Design and fabrication of inverted rib waveguide Bragg grating

NASA Astrophysics Data System (ADS)

Huang, Cheng-Sheng; Wang, Wei-Chih

2009-03-01

A polymeric SU8 rib waveguide Bragg grating filterfabricated using reactive ion etching (RIE) and solvent assisted microcontact molding (SAMIM) is presented. SAMIM is one kind of soft lithography. The technique is unique in which that a composite hPDMS/PDMS stamp was used to transfer the grating pattern onto an inverted SU8 rib waveguide system. The composite grating stamp can be used repeatedly several times with degradation. Using this stamp and inverter rib waveguide structure, the Bragg grating filter fabrication can be significantly simplified.

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

DTIC Science & Technology

1982-02-01

Ephrath F.L. Pesavento MDA903-81-C-0100 D.J. DiMaria C. Falcony D.R. Young 9. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT, PROJECT...Etching (RIE) Apparatus can generate neutral electron traps in SiO 2. The paper by Ephrath, DiMaria and Pesavento discusses the dependence of the...layers. Considerable work remains to be done to correlate the results of these various investigations. A report by Pesavento , Lai and Calise is included

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abernathy, C.R.; Hobson, W.S.; Hong, J.

1998-11-04

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunctionmore » bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.« less

In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marchack, Nathan; Kim, Taeseung; Chang, Jane P., E-mail: jpchang@seas.ucla.edu

2015-05-15

The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy andmore » the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.« less

Fourier Transform Infrared Absorption Spectroscopy of Gas-Phase and Surface Reaction Products during Si Etching in Inductively Coupled Cl2 Plasmas

NASA Astrophysics Data System (ADS)

Miyata, Hiroki; Tsuda, Hirotaka; Fukushima, Daisuke; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2011-10-01

A better understanding of plasma-surface interactions is indispensable during etching, including the behavior of reaction or etch products, because the products on surfaces and in the plasma are important in passivation layer formation through their redeposition on surfaces. In practice, the nanometer-scale control of plasma etching would still rely largely on such passivation layer formation as well as ion-enhanced etching on feature surfaces. This paper presents in situ Fourier transform infrared (FTIR) absorption spectroscopy of gas-phase and surface reaction products during inductively coupled plasma (ICP) etching of Si in Cl2. The observation was made in the gas phase by transmission absorption spectroscopy (TAS), and also on the substrate surface by reflection absorption spectroscopy (RAS). The quantum chemical calculation was also made of the vibrational frequency of silicon chloride molecules. The deconvolution of the TAS spectrum revealed absorption features of Si2Cl6 and SiClx (x = 1-3) as well as SiCl4, while that of the RAS spectrum revealed relatively increased absorption features of unsaturated silicon chlorides. A different behavior was also observed in bias power dependence between the TAS and RAS spectra.

Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma

NASA Astrophysics Data System (ADS)

Amirov, I. I.; Gorlachev, E. S.; Mazaletskiy, L. A.; Izyumov, M. O.; Alov, N. V.

2018-03-01

In this work, we report a technique of the self-formation of a nanonet of fluorinated carbon nanowires on the Si surface using a combined etching in fluorine-containing C4F8/Ar and SF6 plasmas. Using scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy, we show that after the etching of Si in the C4F8/Ar plasma, a fluorinated carbon film of nanometer-scale thickness is formed on its surface and its formation accelerates at elevated temperatures. After a subsequent short-term etching in the SF6 plasma, the film is modified into a nanonet of self-formed fluorinated carbon nanowires.

Characteristics of n-GaN after ICP etching

NASA Astrophysics Data System (ADS)

Han, Yanjun; Xue, Song; Guo, Wenping; Hao, Zhi-Biao; Sun, Changzheng; Luo, Yi

2002-09-01

In this work, a systematic study on the plasma-induced damage on n-type GaN by inductively coupled plasma (ICP) etching is presented. After n-contact metal formation and annealing, electrical property is evaluated by the I-V characteristics. Room temperature photoluminescence (PL) measurement of etched GaN surfaces is performed to investigate the etching damage on the optical properties of n-type GaN. Investigation of the effect of additive gas RF chuck power on these characteristics has also been carried out. The better etching conditions have been obtained based on these results.

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

Anisotropic selective etching between SiGe and Si

NASA Astrophysics Data System (ADS)

Ishii, Yohei; Scott-McCabe, Ritchie; Yu, Alex; Okuma, Kazumasa; Maeda, Kenji; Sebastian, Joseph; Manos, Jim

2018-06-01

In Si/SiGe dual-channel FinFETs, it is necessary to simultaneously control the etched amounts of SiGe and Si. However, the SiGe etch rate is higher than the Si etch rate in not only halogen plasmas but also physical sputtering. In this study, we found that hydrogen plasma selectively etches Si over SiGe. The result shows that the selectivity of Si over SiGe can be up to 38 with increasing Ge concentration in SiGe. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) results indicate that hydrogen selectively bonds with Si rather than with Ge in SiGe. During the etching, hydrogen-induced Si surface segregation is also observed. It is also observed that the difference in etched amount between SiGe and Si can be controlled from positive to negative values even in Si/SiGe dual-channel fin patterning while maintaining the vertical profiles. Furthermore, no plasma-induced lattice damage was observed by transmission electron microscopy for both Si and SiGe fin sidewalls.

Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

NASA Astrophysics Data System (ADS)

Bérubé, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

2009-09-01

The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited CaxBa(1-x)Nb2O6 (CBN) and SrTiO3 thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl2 plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl2 and BaCl2 compounds being the rate-limiting step.

Uniformity studies of inductively coupled plasma etching in fabrication of HgCdTe detector arrays

NASA Astrophysics Data System (ADS)

Bommena, R.; Velicu, S.; Boieriu, P.; Lee, T. S.; Grein, C. H.; Tedjojuwono, K. K.

2007-04-01

Inductively coupled plasma (ICP) chemistry based on a mixture of CH 4, Ar, and H II was investigated for the purpose of delineating HgCdTe mesa structures and vias typically used in the fabrication of second and third generation infrared photo detector arrays. We report on ICP etching uniformity results and correlate them with plasma controlling parameters (gas flow rates, total chamber pressure, ICP power and RF power). The etching rate and surface morphology of In-doped MWIR and LWIR HgCdTe showed distinct dependences on the plasma chemistry, total pressure and RF power. Contact stylus profilometry and cross-section scanning electron microscopy (SEM) were used to characterize the anisotropy of the etched profiles obtained after various processes and a standard deviation of 0.06 μm was obtained for etch depth on 128 x 128 format array vias. The surface morphology and the uniformity of the etched surfaces were studied by plan view SEM. Atomic force microscopy was used to make precise assessments of surface roughness.

Inductive plasmas for plasma processing

NASA Astrophysics Data System (ADS)

Keller, John H.

1996-05-01

With the need for high plasma density and low pressure in single wafer etching tools, a number of inductive etching systems have been and are being developed for commercial sale. This paper reviews some of the history of low-pressure inductive plasmas, gives features of inductive plasmas, limitations, corrections and presents uses for plasma processing. The theory for the skin depth, rf coil impedance and efficiency is also discussed.

160-190 GHz Monolithic Low Noise Amplifiers

NASA Technical Reports Server (NTRS)

Kok, Y. L.; Wang, H.; Huang, T. W.; Lai, R.; Chen, Y. C.; Sholley, M.; Block, T.; Streit, D. C.; Liu, P. H.; Allen, B. R.;

Progress in Electron Beam Mastering of 100 Gbit/inch2 Density Disc

NASA Astrophysics Data System (ADS)

Takeda, Minoru; Furuki, Motohiro; Yamamoto, Masanobu; Shinoda, Masataka; Saito, Kimihiro; Aki, Yuichi; Kawase, Hiroshi; Koizumi, Mitsuru; Miyokawa, Toshiaki; Mutou, Masao; Handa, Nobuo

2004-07-01

We developed an electron beam recorder (EBR) capable of recording master discs under atmospheric conditions using a novel differential pumping head. Using the EBR and optimized fabrication process for Si-etched discs with reactive ion etching (RIE), a bottom signal jitter of 9.6% was obtained from a 36 Gbit/inch2 density disc, readout using a near-field optical pickup with an effective numerical aperture (NA) of 1.85 and a wavelength of 405 nm. We also obtained the eye patterns from a 70 Gbit/inch2 density disc readout using an optical pickup with a 2.05 NA and the same wavelength, and showed almost the same modulation ratio as the simulation value. Moreover, the capability of producing pit patterns corresponding to a 104 Gbit/inch2 density is demonstrated.

Plasma & reactive ion etching to prepare ohmic contacts

DOEpatents

Gessert, Timothy A.

2002-01-01

A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Nicholas R.; Sun, Huaxing; Sharma, Kashish

2016-09-15

Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){submore » 2} exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF{sub 3} layer on the surface. The metal precursor, Sn(acac){sub 2}, then accepts fluorine from the AlF{sub 3} layer and transfers an acac ligand to the AlF{sub 3} layer in a ligand-exchange reaction. The possible volatile etch products are SnF(acac) and either Al(acac){sub 3} or AlF(acac){sub 2}. Adding a H{sub 2} plasma exposure after each Sn(acac){sub 2} exposure dramatically increased the AlN etch rate from 0.36 to 1.96 Å/cycle. This enhanced etch rate is believed to result from the ability of the H{sub 2} plasma to remove acac surface species that may limit the AlN etch rate. The active agent from the H{sub 2} plasma is either hydrogen radicals or radiation. Adding an Ar plasma exposure after each Sn(acac){sub 2} exposure increased the AlN etch rate from 0.36 to 0.66 Å/cycle. This enhanced etch rate is attributed to either ions or radiation from the Ar plasma that may also lead to the desorption of acac surface species.« less

A method to accelerate creation of plasma etch recipes using physics and Bayesian statistics

NASA Astrophysics Data System (ADS)

Chopra, Meghali J.; Verma, Rahul; Lane, Austin; Willson, C. G.; Bonnecaze, Roger T.

2017-03-01

Next generation semiconductor technologies like high density memory storage require precise 2D and 3D nanopatterns. Plasma etching processes are essential to achieving the nanoscale precision required for these structures. Current plasma process development methods rely primarily on iterative trial and error or factorial design of experiment (DOE) to define the plasma process space. Here we evaluate the efficacy of the software tool Recipe Optimization for Deposition and Etching (RODEo) against standard industry methods at determining the process parameters of a high density O2 plasma system with three case studies. In the first case study, we demonstrate that RODEo is able to predict etch rates more accurately than a regression model based on a full factorial design while using 40% fewer experiments. In the second case study, we demonstrate that RODEo performs significantly better than a full factorial DOE at identifying optimal process conditions to maximize anisotropy. In the third case study we experimentally show how RODEo maximizes etch rates while using half the experiments of a full factorial DOE method. With enhanced process predictions and more accurate maps of the process space, RODEo reduces the number of experiments required to develop and optimize plasma processes.

Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

2001-01-01

Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

Feature Profile Evolution of SiO2 Trenches In Fluorocarbon Plasmas

NASA Technical Reports Server (NTRS)

Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arunachalam, Valli; Rauf, Shahid; Coronell, Dan; Carroll, Carol W. (Technical Monitor)

1999-01-01

Etching of silicon microstructures for semiconductor manufacturing in chlorine plasmas has been well characterized. The etching proceeds in a two-part process, where the chlorine neutrals passivate the Si surface and then the ions etch away SiClx. However, etching in more complicated gas mixtures and materials, such as etching of SiO2 in Ar/C4F8, requires knowledge of the ion and neutral distribution functions as a function of angle and velocity, in addition to modeling the gas surface reactions. In order to address these needs, we have developed and integrated a suite of models to simulate the etching process from the plasma reactor level to the feature profile evolution level. This arrangement allows for a better understanding, control, and prediction of the influence of equipment level process parameters on feature profile evolution. We are currently using the HPEM (Hybrid Plasma Equipment Model) and PCMCM (Plasma Chemistry Monte Carlo Model) to generate plasma properties and ion and neutral distribution functions for argon/fluorocarbon discharges in a GEC Reference Cell. These quantities are then input to the feature scale model, Simulation of Profile Evolution by Level Sets (SPELS). A surface chemistry model is used to determine the interaction of the incoming species with the substrate material and simulate the evolution of the trench profile. The impact of change of gas pressure and inductive power on the relative flux of CFx and F to the wafer, the etch and polymerization rates, and feature profiles will be examined. Comparisons to experimental profiles will also be presented.

Single clay sheets inside electrospun polymer nanofibers

NASA Astrophysics Data System (ADS)

Sun, Zhaohui

2005-03-01

Nanofibers were prepared from polymer solution with clay sheets by electrospinning. Plasma etching, as a well controlled process, was used to supply electrically excited gas molecules from a glow discharge. To reveal the structure and arrangement of clay layers in the polymer matrix, plasma etching was used to remove the polymer by controlled gasification to expose the clay sheets due to the difference in reactivity. The shape, flexibility, and orientation of clay sheets were studied by transmission and scanning electron microscopy. Additional quantitative information on size distribution and degree of exfoliation of clay sheets were obtained by analyzing electron micrograph of sample after plasma etching. Samples in various forms including fiber, film and bulk, were thinned by plasma etching. Morphology and dispersion of inorganic fillers were studied by electron microscopy.

Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

NASA Astrophysics Data System (ADS)

Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

2017-06-01

The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

Large-area soft x-ray projection lithography using multilayer mirrors structured by RIE

NASA Astrophysics Data System (ADS)

Rahn, Steffen; Kloidt, Andreas; Kleineberg, Ulf; Schmiedeskamp, Bernt; Kadel, Klaus; Schomburg, Werner K.; Hormes, F. J.; Heinzmann, Ulrich

1993-01-01

SXPL (soft X-ray projection lithography) is one of the most promising applications of X-ray reflecting optics using multilayer mirrors. Within our collaboration, such multilayer mirrors were fabricated, characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors were produced by electron beam evaporation in UHV under thermal treatment with an in-situ X-ray controlled thickness in the region of 2d equals 14 nm. The reflectivities measured at normal incidence reached up to 54%. Various surface analysis techniques have been applied in order to characterize and optimize the X-ray mirrors. The multilayers were patterned by reactive ion etching (RIE) with CF(subscript 4), using a photoresist as the etch mask, thus producing X-ray reflection masks. The masks were tested in the synchrotron radiation laboratory of the electron accelerator ELSA at the Physikalisches Institut of Bonn University. A double crystal X-ray monochromator was modified so as to allow about 0.5 cm(superscript 2) of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto the resist (Hoechst AZ PF 514), which was mounted at an average distance of about 7 mm. In the first test-experiments, structure sizes down to 8 micrometers were nicely reproduced over the whole of the exposed area. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

NASA Astrophysics Data System (ADS)

Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, Lajos; Pécz, Bela; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan

2010-11-01

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

Process Development for Automated Solar Cell and Module Production. Task 4: Automated Array Assembly

NASA Technical Reports Server (NTRS)

1979-01-01

A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.

Change in surface properties of zirconia and initial attachment of osteoblastlike cells with hydrophilic treatment.

PubMed

Watanabe, Hiroaki; Saito, Kensuke; Kokubun, Katsutoshi; Sasaki, Hodaka; Yoshinari, Masao

2012-01-01

The objectives of this study were to characterize change in surface properties of tetragonal zirconia polycrystals (TZP) after hydrophilic treatment, and to determine the effect of such changes on initial attachment of osteoblast-like cells. Roughened surfaces were produced by alumina-blasting and acid-etching. Hydrophilic treatment comprised application of immediately after blasting and acid-etching (Blast/Etch), oxygen plasma (O2-Plasma), ultraviolet light (UV). Specimens stored in air were used as a control. The water contact angle was determined and surface analysis was performed using an X-ray photoelectron spectroscopy. Blast/Etch, O2-Plasma and UV specimens showed superhydrophilicity, and these hydrophilic treatments to TZP elicited a marked decrease in carbon content and an increase in hydroxyl groups. Hydrophilic treatments enhanced initial attachment of osteoblast-like cells and a change in cell morphologies. These results indicate that Blast/Etch, O2-Plasma, or UV treatment has potential in the creation and maintenance of superhydrophilic surfaces and enhancing initial attachment of osteoblast-like cells.

Oxygen and nitrogen plasma etching of three-dimensional hydroxyapatite/chitosan scaffolds fabricated by additive manufacturing

NASA Astrophysics Data System (ADS)

Myung, Sung-Woon; Kim, Byung-Hoon

2016-01-01

Three-dimensional (3D) chitosan and hydroxyapatite (HAp)/chitosan (CH) scaffolds were fabricated by additive manufacturing, then their surfaces were etched with oxygen (O2) and nitrogen (N2) plasma. O2 and N2 plasma etching was performed to increase surface properties such as hydrophilicity, roughness, and surface chemistry on the scaffolds. After etching, hydroxyapatite was exposed on the surface of 3D HAp/CH scaffolds. The surface morphology and chemical properties were characterized by contact angle measurement, scanning electron microscopy, X-ray diffraction, and attenuated total reflection Fourier infrared spectroscopy. The cell viability of 3D chitosan scaffolds was examined by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay. The differentiation of preosteoblast cells was evaluated by alkaline phosphatase assay. The cell viability was improved by O2 and N2 plasma etching of 3D chitosan scaffolds. The present fabrication process for 3D scaffolds might be applied to a potential tool for preparing biocompatible scaffolds.

Diode laser sensor to monitor HCL in a plasma etch reactor

NASA Astrophysics Data System (ADS)

Kim, Suhong; Klimecky, Pete; Chou, Shang-I.; Jeffries, Jay B.; Terry, Fred L., Jr.; Hanson, Ronald K.

2002-09-01

Absorption measurements of HCl during plasma etching of poly-silicon are made using the P(4) transition in the first vibrational overtone band near 1.79 μm. Single path absorption provides a real-time HCl monitor during etching of six-inch wafers in a commercial Lam Research 9400SE reactor at the University of Michigan. Wavelength modulation at 10.7 MHz is used to distinguish the absorption signal from the strong plasma emission. The laser center frequency is ramp-tuned at 500 Hz providing an HCl measurement every 2ms. Direct absorption measurements without the plasma are used to calibrate the wavelength modulation signal. The minimum detectable absorbance was 5x(10)-6 with 50 ms averaging, leading to an HCl detection limit of ~(10)12cm-3. For a given ratio of the feedstock HBr/Cl2, the measured HCl concentration tracks the average etch rate. These measurements demonstrate the feasibility of a real-time diode laser-based etch rate sensor.

Near-infrared diode laser hydrogen fluoride monitor for dielectric etch

NASA Astrophysics Data System (ADS)

Xu, Ning; Pirkle, David R.; Jeffries, Jay B.; McMillin, Brian; Hanson, Ronald K.

2004-11-01

A hydrogen fluoride (HF) monitor, using a tunable diode laser, is designed and used to detect the etch endpoints for dielectric film etching in a commercial plasma reactor. The reactor plasma contains HF, a reaction product of feedstock gas CF4 and the hydrogen-containing films (photoresist, SiOCH) on the substrate. A near-infrared diode laser is used to scan the P(3) transition in the first overtone of HF near 1.31 μm to monitor changes in the level of HF concentration in the plasma. Using 200 ms averaging and a signal modulation technique, we estimate a minimum detectable HF absorbance of 6×10-5 in the etch plasma, corresponding to an HF partial pressure of 0.03 mTorr. The sensor could indicate, in situ, the SiOCH over tetraethoxysilane oxide (TEOS) trench endpoint, which was not readily discerned by optical emission. These measurements demonstrate the feasibility of a real-time diode laser-based sensor for etch endpoint monitoring and a potential for process control.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

NASA Astrophysics Data System (ADS)

Altamore, C.; Tringali, C.; Sparta', N.; Di Marco, S.; Grasso, A.; Ravesi, S.

2010-02-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (105) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 101 Hz to 106 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl2/Ar chemistry. The relationship between the etch rate and the Cl2/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl2/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

3-Dimensional Modeling of Capacitively and Inductively Coupled Plasma Etching Systems

NASA Astrophysics Data System (ADS)

Rauf, Shahid

2008-10-01

Low temperature plasmas are widely used for thin film etching during micro and nano-electronic device fabrication. Fluid and hybrid plasma models were developed 15-20 years ago to understand the fundamentals of these plasmas and plasma etching. These models have significantly evolved since then, and are now a major tool used for new plasma hardware design and problem resolution. Plasma etching is a complex physical phenomenon, where inter-coupled plasma, electromagnetic, fluid dynamics, and thermal effects all have a major influence. The next frontier in the evolution of fluid-based plasma models is where these models are able to self-consistently treat the inter-coupling of plasma physics with fluid dynamics, electromagnetics, heat transfer and magnetostatics. We describe one such model in this paper and illustrate its use in solving engineering problems of interest for next generation plasma etcher design. Our 3-dimensional plasma model includes the full set of Maxwell equations, transport equations for all charged and neutral species in the plasma, the Navier-Stokes equation for fluid flow, and Kirchhoff's equations for the lumped external circuit. This model also includes Monte Carlo based kinetic models for secondary electrons and stochastic heating, and can take account of plasma chemistry. This modeling formalism allows us to self-consistently treat the dynamics in commercial inductively and capacitively coupled plasma etching reactors with realistic plasma chemistries, magnetic fields, and reactor geometries. We are also able to investigate the influence of the distributed electromagnetic circuit at very high frequencies (VHF) on the plasma dynamics. The model is used to assess the impact of azimuthal asymmetries in plasma reactor design (e.g., off-center pump, 3D magnetic field, slit valve, flow restrictor) on plasma characteristics at frequencies from 2 -- 180 MHz. With Jason Kenney, Ankur Agarwal, Ajit Balakrishna, Kallol Bera, and Ken Collins.

Correlation of III/V semiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance

NASA Astrophysics Data System (ADS)

Gerhard, FRANZ; Ralf, MEYER; Markus-Christian, AMANN

2017-12-01

Reactive ion etching is the interaction of reactive plasmas with surfaces. To obtain a detailed understanding of this process, significant properties of reactive composite low-pressure plasmas driven by electron cyclotron resonance (ECR) were investigated and compared with the radial uniformity of the etch rate. The determination of the electronic properties of chlorine- and hydrogen-containing plasmas enabled the understanding of the pressure-dependent behavior of the plasma density and provided better insights into the electronic parameters of reactive etch gases. From the electrical evaluation of I(V) characteristics obtained using a Langmuir probe, plasmas of different compositions were investigated. The standard method of Druyvesteyn to derive the electron energy distribution functions by the second derivative of the I(V) characteristics was replaced by a mathematical model which has been evolved to be more robust against noise, mainly, because the first derivative of the I(V) characteristics is used. Special attention was given to the power of the energy dependence in the exponent. In particular, for plasmas that are generated by ECR with EM modes, the existence of Maxwellian distribution functions is not to be taken as a self-evident fact, but the bi-Maxwellian distribution was proven for Ar- and Kr-stabilized plasmas. In addition to the electron temperature, the global uniform discharge model has been shown to be useful for calculating the neutral gas temperature. To what extent the invasive method of using a Langmuir probe could be replaced with the non-invasive optical method of emission spectroscopy, particularly actinometry, was investigated, and the resulting data exhibited the same relative behavior as the Langmuir data. The correlation with etchrate data reveals the large chemical part of the removal process—most striking when the data is compared with etching in pure argon. Although the relative amount of the radial variation of plasma density and etch rate is approximately +/- 5 % , the etch rate shows a slightly concave shape in contrast to the plasma density.

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

NASA Astrophysics Data System (ADS)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

A Macroporous TiO2 Oxygen Sensor Fabricated Using Anodic Aluminium Oxide as an Etching Mask

PubMed Central

Lu, Chih-Cheng; Huang, Yong-Sheng; Huang, Jun-Wei; Chang, Chien-Kuo; Wu, Sheng-Po

2010-01-01

An innovative fabrication method to produce a macroporous Si surface by employing an anodic aluminium oxide (AAO) nanopore array layer as an etching template is presented. Combining AAO with a reactive ion etching (RIE) processes, a homogeneous and macroporous silicon surface can be effectively configured by modulating AAO process parameters and alumina film thickness, thus hopefully replacing conventional photolithography and electrochemical etch methods. The hybrid process integration is considered fully CMOS compatible thanks to the low-temperature AAO and CMOS processes. The gas-sensing characteristics of 50 nm TiO2 nanofilms deposited on the macroporous surface are compared with those of conventional plain (or non-porous) nanofilms to verify reduced response noise and improved sensitivity as a result of their macroporosity. Our experimental results reveal that macroporous geometry of the TiO2 chemoresistive gas sensor demonstrates 2-fold higher (∼33%) improved sensitivity than a non-porous sensor at different levels of oxygen exposure. In addition, the macroporous device exhibits excellent discrimination capability and significantly lessened response noise at 500 °C. Experimental results indicate that the hybrid process of such miniature and macroporous devices are compatible as well as applicable to integrated next generation bio-chemical sensors. PMID:22315561

A macroporous TiO2 oxygen sensor fabricated using anodic aluminium oxide as an etching mask.

PubMed

Lu, Chih-Cheng; Huang, Yong-Sheng; Huang, Jun-Wei; Chang, Chien-Kuo; Wu, Sheng-Po

2010-01-01

An innovative fabrication method to produce a macroporous Si surface by employing an anodic aluminium oxide (AAO) nanopore array layer as an etching template is presented. Combining AAO with a reactive ion etching (RIE) processes, a homogeneous and macroporous silicon surface can be effectively configured by modulating AAO process parameters and alumina film thickness, thus hopefully replacing conventional photolithography and electrochemical etch methods. The hybrid process integration is considered fully CMOS compatible thanks to the low-temperature AAO and CMOS processes. The gas-sensing characteristics of 50 nm TiO(2) nanofilms deposited on the macroporous surface are compared with those of conventional plain (or non-porous) nanofilms to verify reduced response noise and improved sensitivity as a result of their macroporosity. Our experimental results reveal that macroporous geometry of the TiO(2) chemoresistive gas sensor demonstrates 2-fold higher (∼33%) improved sensitivity than a non-porous sensor at different levels of oxygen exposure. In addition, the macroporous device exhibits excellent discrimination capability and significantly lessened response noise at 500 °C. Experimental results indicate that the hybrid process of such miniature and macroporous devices are compatible as well as applicable to integrated next generation bio-chemical sensors.

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

NASA Astrophysics Data System (ADS)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (<30 sec), comparable with the annealing times necessary for dopant activation of p-GaN films and provides an opportunity for streamlining process flow. Plasma etching degrades contact quality on n-GaN films and this degradation has been found to increase with the rf bias levels (ion energies) used, most notably in films with higher doping levels. Immersion in 1:1 mixture of hydrochloric acid and de-ionized water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

NASA Astrophysics Data System (ADS)

Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

2017-04-01

Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

Plasma etching a ceramic composite. [evaluating microstructure

NASA Technical Reports Server (NTRS)

Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

1992-01-01

Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirota, Kosa, E-mail: hirota-kousa@sme.hitachi-hitec.com; Itabashi, Naoshi; Tanaka, Junichi

2014-11-01

The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaningmore » method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.« less

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

NASA Astrophysics Data System (ADS)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Selective Plasma Etching of Polymeric Substrates for Advanced Applications

PubMed Central

Puliyalil, Harinarayanan; Cvelbar, Uroš

2016-01-01

In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance. PMID:28335238

Knudsen pump produced via silicon deep RIE, thermal oxidation, and anodic bonding processes for on-chip vacuum pumping

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Inomata, Naoki; Trung, Nguyen Huu; Ono, Takahito

2018-05-01

This work describes the fabrication and evaluation of the Knudsen pump for on-chip vacuum pumping that works based on the principle of a thermal transpiration. Three AFM (atomic force microscope) cantilevers are integrated into small chambers with a size of 5 mm  ×  3 mm  ×  0.4 mm for the pump’s evaluation. Knudsen pump is fabricated using deep RIE (reactive ion etching), wet thermal oxidation and anodic bonding processes. The fabricated device is evaluated by monitoring the quality (Q) factor of the integrated cantilevers. The Q factor of the cantilever is increased from 300 -1150 in cases without and with a temperature difference approximately 25 °C between the top (the hot side at 40 °C) and bottom (the cold side at 15 °C) sides of the fabricated device, respectively. The evacuated chamber pressure of around 10 kPa is estimated from the Q factor of the integrated cantilevers.

Pattern transfer from nanoparticle arrays

NASA Astrophysics Data System (ADS)

Hogg, Charles R., III

This project contributes to the long-term extensibility of bit-patterned media (BPM), by removing obstacles to using a new and smaller class of self-assembling materials: surfactant-coated nanoparticles. Self-assembly rapidly produces regular patterns of small features over large areas. If these patterns can be used as templates for magnetic bits, the resulting media would have both high capacity and high bit density. The data storage industry has identified block copolymers (BCP) as the self-assembling technology for the first generation of BPM. Arrays of surfactant-coated nanoparticles have long shown higher feature densities than BCP, but their patterns could not previously be transferred into underlying substrates. I identify one key obstacle that has prevented this pattern transfer: the particles undergo a disordering transition during etching which I have called "cracking". I compare several approaches to measuring the degree of cracking, and I develop two novel techniques for preventing it and allowing pattern transfer. I demonstrate two different kinds of pattern transfer: positive (dots) and negative (antidots). To make dots, I etch the substrate between the particles with a directional CF4-based reactive ion etch (RIE). I find the ultrasmall gaps (just 2 nm) cause a tremendous slowdown in the etch rate, by a factor of 10 or more---an observation of fundamental significance for any pattern transfer at ultrahigh bit densities. Antidots are made by depositing material in the interstices, then removing the particles to leave behind a contiguous inorganic lattice. This lattice can itself be used as an etch mask for CF4-based RIE, in order to increase the height contrast. The antidot process promises great generality in choice of materials, both for the antidot lattice and the particles themselves; here, I present lattices of Al and Cr, ternplated from arrays of 13.7 nm-diameter Fe3O4 or 30 nm-diameter MnO nanoparticles. The fidelity of transfer is also noticeably better for antidots than for dots, making antidots the more promising technique for industrial applications. The smallest period for which I have shown pattern transfer (15.7 nm) is comparable to (but slightly smaller than) the smallest period currently shown for pattern transfer from block copolymers (17 nm); hence, my results compare favorably with the state of the art. Ultimately, by demonstrating that surfactant-coated nanoparticles can be used as pattern masks, this work increases their viability as an option to continue the exponential growth of bit density in magnetic storage media.

Recent advancements in anti-reflective surface structures (ARSS) for near- to mid-infrared optics

NASA Astrophysics Data System (ADS)

Florea, Catalin M.; Busse, Lynda E.; Bayya, Shyam S.; Shaw, Brandon; Aggarwal, Ish D.; Sanghera, Jas S.

2013-06-01

Fused silica, YAG crystals, and spinel ceramics substrates have been successfully patterned through reactive ion etching (RIE). Reflection losses as low as 0.1% have been demonstrated for fused silica at 1.06 microns. Laser damage thresholds have been measured for substrates with ARSS and compared with uncoated and/or thin-film anti-reflection (AR) coated substrates. Thresholds as high as 100 J/cm2 have been demonstrated in fused silica with ARSS at 1.06 microns, with ARSS substrates showing improved thresholds when compared with uncoated substrates.

Microfabrication of high performance optical diaphragm by plasma ion beam etching technology

NASA Astrophysics Data System (ADS)

Mestreau, Agnes; Bernardet, Henri; Dancoing, Guy; Godechot, Xavier; Pezant, Christian; Stenger, Vincent; Cousin, Bernard; Etcheto, Pierre; Otrio, Georges

2018-04-01

This paper, "Microfabrication of high performance optical diaphragm by plasma ion beam etching technology," was presented as part of International Conference on Space Optics—ICSO 1997, held in Toulouse, France.

Plasma surface modification of polypropylene track-etched membrane to improve its performance properties

NASA Astrophysics Data System (ADS)

Kravets, L. I.; Elinson, V. M.; Ibragimov, R. G.; Mitu, B.; Dinescu, G.

2018-02-01

The surface and electrochemical properties of polypropylene track-etched membrane treated by plasma of nitrogen, air and oxygen are studied. The effect of the plasma-forming gas composition on the surface morphology is considered. It has been found that the micro-relief of the membrane surface formed under the gas-discharge etching, changes. Moreover, the effect of the non-polymerizing gas plasma leads to formation of oxygen-containing functional groups, mostly carbonyl and carboxyl. It is shown that due to the formation of polar groups on the surface and its higher roughness, the wettability of the plasma-modified membranes improves. In addition, the presence of polar groups on the membrane surface layer modifies its electrochemical properties so that conductivity of plasma-treated membranes increase.

Fracture Tests of Etched Components Using a Focused Ion Beam Machine

NASA Technical Reports Server (NTRS)

Kuhn, Jonathan, L.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Orloff, Jon; Powers, Edward I. (Technical Monitor)

2000-01-01

Many optical MEMS device designs involve large arrays of thin (0.5 to 1 micron components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture test configurations for 0.5 micron thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe. and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

Etching method for photoresists or polymers

NASA Technical Reports Server (NTRS)

Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

1991-01-01

A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

Cl 2-based dry etching of the AlGaInN system in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Cho, Hyun; Vartuli, C. B.; Abernathy, C. R.; Donovan, S. M.; Pearton, S. J.; Shul, R. J.; Han, J.

1998-12-01

Cl 2-Based inductively coupled plasmas with low additional d.c. self-biases (-100 V) produce convenient etch rates (500-1500 Å·min -1) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas (Ar, N 2, H 2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl 2 in the discharge for all three mixtures and to have an increase (decrease) in etch rate with source power (pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Inductively coupled BCl 3/Cl 2 /Ar plasma etching of Al-rich AlGaN

DOE PAGES

Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

2016-12-01

Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail themore » effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Environmentally benign semiconductor processing for dielectric etch

NASA Astrophysics Data System (ADS)

Liao, Marci Yi-Ting

Semiconductor processing requires intensive usage of chemicals, electricity, and water. Such intensive resource usage leaves a large impact on the environment. For instance, in Silicon Valley, the semiconductor industry is responsible for 80% of the hazardous waste sites contaminated enough to require government assistance. Research on environmentally benign semiconductor processing is needed to reduce the environmental impact of the semiconductor industry. The focus of this dissertation is on the environmental impact of one aspect of semiconductor processing: patterning of dielectric materials. Plasma etching of silicon dioxide emits perfluorocarbons (PFCs) gases, like C2F6 and CF4, into the atmosphere. These gases are super global warming/greenhouse gases because of their extremely long atmospheric lifetimes and excellent infrared absorption properties. We developed the first inductively coupled plasma (ICP) abatement device for destroying PFCs downstream of a plasma etcher. Destruction efficiencies of 99% and 94% can be obtained for the above mentioned PFCs, by using O 2 as an additive gas. Our results have lead to extensive modeling in academia as well as commercialization of the ICP abatement system. Dielectric patterning of hi-k materials for future device technology brings different environment challenges. The uncertainty of the hi-k material selection and the patterning method need to be addressed. We have evaluated the environmental impact of three different dielectric patterning methods (plasma etch, wet etch and chemical-mechanical polishing), as well as, the transistor device performances associated with the patterning methods. Plasma etching was found to be the most environmentally benign patterning method, which also gives the best device performance. However, the environmental concern for plasma etching is the possibility of cross-contamination from low volatility etch by-products. Therefore, mass transfer in a plasma etcher for a promising hi-k dielectric material, ZrO2, was studied. A novel cross-contamination sampling technique was developed, along with a mass transfer model.

Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

PubMed Central

Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

2012-01-01

Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

Modeling of block copolymer dry etching for directed self-assembly lithography

NASA Astrophysics Data System (ADS)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

PubMed Central

M. N, M. Nuzaihan; Hashim, U.; Md Arshad, M. K.; Ruslinda, A. Rahim; Rahman, S. F. A.; Fathil, M. F. M.; Ismail, Mohd. H.

2016-01-01

A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications. PMID:27022732

Cryogenic Etching of Silicon: An Alternative Method For Fabrication of Vertical Microcantilever Master Molds

PubMed Central

Addae-Mensah, Kweku A.; Retterer, Scott; Opalenik, Susan R.; Thomas, Darrell; Lavrik, Nickolay V.; Wikswo, John P.

2013-01-01

This paper examines the use of deep reactive ion etching (DRIE) of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of a SiOxFy polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the O2 flow rate and the capacitively coupled plasma (CCP) power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using e-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 µm, and 2 µm. PMID:24223478

Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation

NASA Astrophysics Data System (ADS)

Liu, Zecheng; Imamura, Masato; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

2017-08-01

Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces.

PubMed

Baquedano, Estela; Martinez, Ramses V; Llorens, José M; Postigo, Pablo A

2017-05-11

Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiO x (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.

Microfabricated Nanotopological Surfaces for Study of Adhesion-dependent Cell mechanosensitivity**

PubMed Central

Chen, Weiqiang; Sun, Yubing

2014-01-01

Cells display high sensitivity and exhibit diverse responses to the intrinsic nanotopography of the extracellular matrix through their nanoscale cellular sensing machinery. Here, we reported a simple microfabrication method for precise control and spatial patterning of the local nanoroughness on glass surfaces using photolithography and reactive ion etching (RIE). Using RIE-generated nanorough glass surfaces, we demonstrated that local nanoroughness could provide a potent biophysical signal to regulate a diverse array of NIH/3T3 fibroblast behaviors, including cell morphology, adhesion, proliferation and migration. We further showed that cellular responses to nanotopography might be regulated by cell adhesion signaling and actin cytoskeleton remodeling. To further investigate the role of cytoskeleton contractility in nanoroughness sensing, we applied the RIE method to generate nanoroughness on the tops of an array of elastomeric poly-dimethylsiloxane (PDMS) microposts. We utilized the PDMS microposts as force sensors and demonstrated that nanoroughness could indeed regulate the cytoskeleton contractility of NIH/3T3 fibroblasts. Our results suggested that a feedback regulation and mechano-chemical integration mechanism involving adhesion signaling, actin cytoskeleton, and intracellular mechanosensory components might play an important role in regulating mechanosensitive behaviors of NIH/3T3 fibroblasts. The capability to control and further predict cellular responses to nanoroughness might suggest novel methods for developing biomaterials mimicking nanotopographic structures in vivo and suitable local cellular microenvironments for functional tissue engineering. PMID:22887768

Anisotropic etching of amorphous perfluoropolymer films in oxygen-based inductively coupled plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ono, Takao; Akagi, Takanori; Center for NanoBio Integration, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656

2009-01-01

An amorphous perfluoropolymer, 'Cytop' (Asahi Glass Co., Ltd.), is a preferable material for the fabrication of micro total analysis system devices because of its superior optical transparency over a wide wavelength range and low refractive index of 1.34, which is almost the same as that of water, as well as excellent chemical stability. To establish the precise microfabrication technology for this unique resin, the dry etching of the amorphous perfluoropolymer in Ar/O{sub 2} low-pressure inductively coupled plasma has been studied. A relatively high etch rate of approximately 6.3 {mu}m/min at maximum and highly anisotropic etched features was attained. Plasma measurementsmore » by a single Langmuir probe technique and actinometry revealed that etching is dominated by ion-assisted surface desorption above a 10%O{sub 2} mixing ratio, whereas the supply of active oxygen species is the rate-limiting process below 10%. Moreover, angled x-ray photoelectron spectroscopy measurements of an etched trench pattern revealed that a high anisotropy is attributed to the formation of a carbon-rich sidewall protection layer.« less

Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4F 8 and Ar/CHF 3 plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2015-11-11

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films.

PubMed

Flynn, Shauna P; Bogan, Justin; Lundy, Ross; Khalafalla, Khalafalla E; Shaw, Matthew; Rodriguez, Brian J; Swift, Paul; Daniels, Stephen; O'Connor, Robert; Hughes, Greg; Kelleher, Susan M

2018-08-31

Self-assembling block copolymer (BCP) patterns are one of the main contenders for the fabrication of nanopattern templates in next generation lithography technology. Transforming these templates to hard mark materials is key for pattern transfer and in some cases, involves selectively removing one block from the nanopattern. For poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP), a high χ BCP system which could be potentially incorporated into semiconductor nanofabrication, this selective removal is predominantly done by a wet etch/activation process. Conversely, this process has numerous disadvantages including lack of control and high generation of waste leading to high cost. For these reasons, our motivation was to move away from the wet etch process and optimise a dry etch which would overcome the limitations associated with the activation process. The work presented herein shows the development of a selective plasma etch process for the removal of P4VP cores from PS-b-P4VP nanopatterned film. Results have shown that a nitrogen reactive ion etch plasma has a selectivity for P4VP of 2.2:1 and suggest that the position of the nitrogen in the aromatic ring of P4VP plays a key role in this selectivity. In situ plasma etching and x-ray photoelectron spectrometry measurements were made without breaking vacuum, confirming that the nitrogen plasma has selectivity for removal of P4VP over PS.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

Characteristics of pulsed dual frequency inductively coupled plasma

NASA Astrophysics Data System (ADS)

Seo, Jin Seok; Kim, Kyoung Nam; Kim, Ki Seok; Kim, Tae Hyung; Yeom, Geun Young

2015-01-01

To control the plasma characteristics more efficiently, a dual antenna inductively coupled plasma (DF-ICP) source composed of a 12-turn inner antenna operated at 2 MHz and a 3-turn outer antenna at 13.56 MHz was pulsed. The effects of pulsing to each antenna on the change of plasma characteristics and SiO2 etch characteristics using Ar/C4F8 gas mixtures were investigated. When the duty percentage was decreased from continuous wave (CW) mode to 30% for the inner or outer ICP antenna, decrease of the average electron temperature was observed for the pulsing of each antenna. Increase of the CF2/F ratio was also observed with decreasing duty percentage of each antenna, indicating decreased dissociation of the C4F8 gas due to the decreased average electron temperature. When SiO2 etching was investigated as a function of pulse duty percentage, increase of the etch selectivity of SiO2 over amorphous carbon layer (ACL) was observed while decreasing the SiO2 etch rate. The increase of etch selectivity was related to the change of gas dissociation characteristics, as observed by the decrease of average electron temperature and consequent increase of the CF2/F ratio. The decrease of the SiO2 etch rate could be compensated for by using the rf power compensated mode, that is, by maintaining the same time-average rf power during pulsing, instead of using the conventional pulsing mode. Through use of the power compensated mode, increased etch selectivity of SiO2/ACL similar to the conventional pulsing mode could be observed without significant decrease of the SiO2 etch rate. Finally, by using the rf power compensated mode while pulsing rf powers to both antennas, the plasma uniformity over the 300 mm diameter substrate could be improved from 7% for the CW conditions to about around 3.3% with the duty percentage of 30%.

Cyclic photochemical re-growth of gold nanoparticles: Overcoming the mask-erosion limit during reactive ion etching on the nanoscale

PubMed Central

Seidenstücker, Axel; Plettl, Alfred; Ziemann, Paul

2013-01-01

Summary The basic idea of using hexagonally ordered arrays of Au nanoparticles (NP) on top of a given substrate as a mask for the subsequent anisotropic etching in order to fabricate correspondingly ordered arrays of nanopillars meets two serious obstacles: The position of the NP may change during the etching process and, thus, the primary pattern of the mask deteriorates or is completely lost. Furthermore, the NP are significantly eroded during etching and, consequently, the achievable pillar height is strongly restricted. The present work presents approaches on how to get around both problems. For this purpose, arrays of Au NPs (starting diameter 12 nm) are deposited on top of silica substrates by applying diblock copolymer micelle nanolithography (BCML). It is demonstrated that evaporated octadecyltrimethoxysilane (OTMS) layers act as stabilizer on the NP position, which allows for an increase of their size up to 50 nm by an electroless photochemical process. In this way, ordered arrays of silica nanopillars are obtained with maximum heights of 270 nm and aspect ratios of 5:1. Alternatively, the NP position can be fixed by a short etching step with negligible mask erosion followed by cycles of growing and reactive ion etching (RIE). In that case, each cycle is started by photochemically re-growing the Au NP mask and thereby completely compensating for the erosion due to the previous cycle. As a result of this mask repair method, arrays of silica nanopillar with heights up to 680 nm and aspect ratios of 10:1 are fabricated. Based on the given recipes, the approach can be applied to a variety of materials like silicon, silicon oxide, and silicon nitride. PMID:24367758

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma

NASA Astrophysics Data System (ADS)

Liu, Zecheng; Ishikawa, Kenji; Imamura, Masato; Tsutsumi, Takayoshi; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

2018-06-01

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stamate, E.; Draghici, M.

2012-04-15

A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF{sub 6} gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F{sup -}. Themore » magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF{sub 6}/O{sub 2} mixtures was almost similar with that by positive ions reaching 700 nm/min.« less

Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane

2015-09-15

Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven.more » Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.« less

Characteristics of n-GaN After Cl2/Ar and Cl2/N2 Inductively Coupled Plasma Etching

NASA Astrophysics Data System (ADS)

Han, Yan-Jun; Xue, Song; Guo, Wen-Ping; Sun, Chang-Zheng; Hao, Zhi-Biao; Luo, Yi

2003-10-01

A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current-voltage (I-V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.

Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Ankur; Kushner, Mark J.; Iowa State University, Department of Electrical and Computer Engineering, 104 Marston Hall, Ames, Iowa 50011-2151

2005-09-15

The distributions of ion energies incident on the wafer significantly influence feature profiles and selectivity during plasma etching. Control of ion energies is typically obtained by varying the amplitude or frequency of a radio frequency sinusoidal bias voltage applied to the substrate. The resulting ion energy distribution (IED), though, is generally broad. Controlling the width and shape of the IED can potentially improve etch selectivity by distinguishing between threshold energies of surface processes. In this article, control of the IED was computationally investigated by applying a tailored, nonsinusoidal bias waveform to the substrate of an inductively coupled plasma. The waveformmore » we investigated, a quasi-dc negative bias having a short positive pulse each cycle, produced a narrow IED whose width was controllable based on the length of the positive spike and frequency. We found that the selectivity between etching Si and SiO{sub 2} in fluorocarbon plasmas could be controlled by adjusting the width and energy of the IED. Control of the energy of a narrow IED enables etching recipes that transition between speed and selectivity without change of gas mixture.« less

Sequential infiltration synthesis for enhancing multiple-patterning lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

Physics and chemistry of complex oxide etching and redeposition control

NASA Astrophysics Data System (ADS)

Margot, Joëlle

2012-10-01

Since its introduction in the 1970s, plasma etching has become the universal method for fine-line pattern transfer onto thin films and is anticipated to remain so in foreseeable future. Despite many success stories, plasma etching processes fail to meet the needs for several of the newest materials involved in advanced devices for photonic, electronic and RF applications like ferroelectrics, electro-optic materials, high-k dielectrics, giant magnetoresistance materials and unconventional conductors. In this context, the work achieved over the last decade on the etching of multicomponent oxides thin films such as barium strontium titanate (BST), strontium titanate (STO) and niobate of calcium and barium (CBN) will be reviewed. These materials present a low reactivity with usual etching gases such as fluorinated and chlorinated gases, their etching is mainly governed by ion sputtering and reactive gases sometimes interact with surface materials to form compounds that inhibit etching. The etching of platinum will also be presented as an example of unconventional conductor materials for which severe redeposition limits the achievable etching quality. Finally, it will be shown how simulation can help to understand the etching mechanisms and to define avenues for higher quality patterning.

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

NASA Astrophysics Data System (ADS)

Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul

2018-05-01

We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1–xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min‑1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1–xP stop layers even at aluminum contents of a few percent.

Sequential infiltration synthesis for advanced lithography

DOEpatents

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih; Peng, Qing

2015-03-17

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Experiments on Plasma Turbulence Created by Supersonic Plasma Flows with Shear

DTIC Science & Technology

2014-04-01

for producing a plasma column (in black). An insulated wire traverses the plasma and car - ries a pulsed current in x-direction. The unmagnetized ions... electric field which together with the B field around the wire causes an electron ExB drift. The ions are unmagnetized. A radial space charge electric field...by the self-consistent currents passing through the grid. These currents, consisting of electron and ion flows, are controlled by the electrical

Barium-strontium-titanate etching characteristics in chlorinated discharges

NASA Astrophysics Data System (ADS)

Stafford, Luc; Margot, Joëlle; Langlois, Olivier; Chaker, Mohamed

2003-07-01

The etching characteristics of barium-strontium-titanate (BST) were investigated using a high-density plasma sustained by surface waves at 190 MHz in Ar/Cl2 gas mixtures. The etch rate was examined as a function of both the total gas pressure and the Cl2 fraction in Ar/Cl2 using a wafer temperature of 10 °C. The results were correlated to positive ion density and plasma composition obtained from Langmuir probes and mass spectrometry. The BST etch rate was found to increase linearly with the positive ion density and to decrease with increasing chlorine atom concentration. This result indicates that for the temperature conditions used, the interaction between chlorine and BST yields compounds having a volatility that is lower than the original material. As a consequence, the contribution of neutral atomic Cl atoms to the etch mechanism is detrimental, thereby reducing the etch rate. As the wafer temperature increases, the role of chemistry in the etching process is enhanced.

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

2018-01-01

We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

2012-09-15

The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (-108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate biasmore » reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiCl{sub x} (x = 1 - 4), many Si-oxychloride fragments with m/e = 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex 'recycling' process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl{sub 3} sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e = 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.« less

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF{sub 3}/HBr/O{sub 2} and Cl{sub 2}/O{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, Yuan-Hung, E-mail: yhtseng.ee99g@nctu.edu.tw; Tsui, Bing-Yue

2014-05-15

In this paper, the authors performed a reactive ion etch of a 4H-SiC substrate with a gas mixture of NF{sub 3}, HBr, and O{sub 2}, resulting in a microtrenching-free etch. The etch rate was 107.8 nm/min, and the selectivity over the oxide hard mask was ∼3.85. Cross-sectional scanning electron microscopy showed no microtrenching compared with etches using plasmas of NF{sub 3}, NF{sub 3}/HBr, and NF{sub 3}/O{sub 2}. Analyzing a variety of HBr/O{sub 2} mixing ratios, the authors discuss the additive effect of each gas and their respective potential mechanisms for alleviating microtrenching. To increase the radius of gyration of the bottommore » corners, they introduced a second etch step with Cl{sub 2}/O{sub 2} plasma. Fabricating simple metal-oxide-semiconductor capacitors on the two-step etched surface, the authors found that the electrical characteristics of the etched sample were nearly the same as the nonetched sample.« less

Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

2018-04-01

Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

Nanotextured PDMS Substrates for Enhanced Roughness and Aptamer Immobilization for Cancer Cell Capture

NASA Astrophysics Data System (ADS)

Islam, Muhymin; Mahmood, Arif; Bellah, Md.; Kim, Young-Tae; Iqbal, Samir

2014-03-01

Detection of circulating tumor cells (CTCs) in the early stages of cancer is requires very sensitive approach. Nanotextured polydimethylsiloxane (PDMS) substrates were fabricated by micro reactive ion etching (Micro-RIE) to have better control on surface morphology and to improve the affinity of PDMS surfaces to capture cancer cells using surface immobilized aptamers. The aptamers were specific to epidermal growth factor receptors (EGFR) present in cell membranes, and overexpressed in tumor cells. We also investigated the effect of nano-scale features on cell capturing by implementing various surfaces of different roughnesses. Three different recipes were used to prepare nanotextured PDMS by micro-RIE using oxygen (O2) and carbon tetrafluoride (CF4). The measured average roughness of three nanotextured PDMS surfaces were found to impact average densities of captured cells. In all cases, nanotextured PDMS facilitated cell capturing possibly due to increased effective surface area of roughened substrates at nanoscale. It was also observed that cell capture efficiency was higher for higher surface roughness. The nanotextured PDMS substrates are thus useful for cancer cytology devices.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

NASA Astrophysics Data System (ADS)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

2017-02-01

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.

Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

NASA Astrophysics Data System (ADS)

Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

2000-07-01

In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Economou, Demetre J.

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods includemore » the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas.« less

Method of plasma etching Ga-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2012-12-25

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Method of plasma etching GA-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2013-01-01

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

NASA Astrophysics Data System (ADS)

Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

2010-09-01

Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

Effect of surface etching on the oxidation behavior of plasma chromizing-treated AISI440B stainless steel

NASA Astrophysics Data System (ADS)

Meng, T. X.; Guo, Q.; Xi, W.; Ding, W. Q.; Liu, X. Z.; Lin, N. M.; Yu, S. W.; Liu, X. P.

2018-03-01

Double glow plasma surface alloying was applied to prepare chromizing layer in the surface of AISI440B stainless steel. Prior to chromizing, the stainless steel was etched by microwave plasma chemical vapor deposition to change the surface morphology and composition, and then heated for chromizing at 950 °C for 3 h. The cyclical oxidation of steel after chromizing was carried out at 900 °C for 100 h. Scanning electron microscopy, glow discharge optical emission spectrometer and X-ray diffractometer were used to characterize microstructure, composition and phase structure of alloyed and oxidized samples. The results show that the surface was composed of the Cr-rich top layer and Cr23C6, Cr7C3 and {Cr,Fe}7C3 below layer after chromizing. The bonding between the chromizing layer and the substrate after etching treatment was obviously strengthened. AISI440B steel shows a poor oxidation resistance and the weight gain oxidized for 100 h was up to 31.1 mg/cm2. Weight gains for chromizing and etching + chromizing treated samples were 0.67 mg/cm2 and 8 mg/cm2, respectively. Both oxidized surfaces of chromizing and etching + chromizing were composed of Cr2O3, but the oxide scale of etching + chromizing treated samples was more compact than that of samples without etching.

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.

2016-05-15

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ionmore » energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.« less

Atomic-layer soft plasma etching of MoS2

PubMed Central

Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

2016-01-01

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

2002-01-01

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Sequential infiltration synthesis for advanced lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned usingmore » photolithography, electron-beam lithography or a block copolymer self-assembly process.« less

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuboi, Nobuyuki, E-mail: Nobuyuki.Kuboi@jp.sony.com; Tatsumi, Tetsuya; Kinoshita, Takashi

2015-11-15

The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness,more » etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching showed that the Si fin (source/drain region) was directly damaged by high energy hydrogen and had local variations in the damage distribution, which may lead to a shift in the threshold voltage and the off-state leakage current. Therefore, side-wall etching and ion implantation processes must be carefully designed by considering the Si damage distribution to achieve low damage and high transistor performance for complementary metal–oxide–semiconductor devices.« less

TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

NASA Astrophysics Data System (ADS)

Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

2009-03-01

An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The downside of needing liquid nitrogen to perform cryogenic etching can be improved by using a new approach in which both the pulsed and mixed modes are combined into the so-called puffed mode. Alternatively, the use of tetra-ethyl-ortho-silicate (TEOS) as a silicon oxide precursor is proposed to enable sufficient inhibiting strength and improved profile control up to room temperature. Pulsed-mode processing, the second important aspect, is commonly performed in a cycle using two separate steps: etch and deposition. Sometimes, a three-step cycle is adopted using a separate step to clean the bottom of etching features. This study highlights an issue, known by the authors but not discussed before in the literature: the need for proper synchronization between gas and bias pulses to explore the benefit of three steps. The transport of gas from the mass flow controller towards the wafer takes time, whereas the application of bias to the wafer is relatively instantaneous. This delay causes a problem with respect to synchronization when decreasing the step time towards a value close to the gas residence time. It is proposed to upgrade the software with a delay time module for the bias pulses to be in pace with the gas pulses. If properly designed, the delay module makes it possible to switch on the bias exactly during the arrival of the gas for the bottom removal step and so it will minimize the ionic impact because now etch and deposition steps can be performed virtually without bias. This will increase the mask etch selectivity and lower the heat impact significantly. Moreover, the extra bottom removal step can be performed at (also synchronized!) low pressure and therefore opens a window for improved aspect ratios. The temperature control of the wafer, a third aspect of this study, at a higher etch rate and longer etch time, needs critical attention, because it drastically limits the DRIE performance. It is stressed that the exothermic reaction (high silicon loading) and ionic impact (due to metallic masks and/or exposed silicon) are the main sources of heat that might raise the wafer temperature uncontrollably, and they show the weakness of the helium backside technique using mechanical clamping. Electrostatic clamping, an alternative technique, should minimize this problem because it is less susceptible to heat transfer when its thermal resistance and the gap of the helium backside cavity are minimized; however, it is not a subject of the current study. Because oxygen-growth-based etch processes (due to their ultra thin inhibiting layer) rely more heavily on a constant wafer temperature than fluorocarbon-based processes, oxygen etches are more affected by temperature fluctuations and drifts during the etching. The fourth outcome of this review is a phenomenological model, which explains and predicts many features with respect to loading, flow and pressure behaviour in DRIE equipment including a diffusion zone. The model is a reshape of the flow model constructed by Mogab, who studied the loading effect in plasma etching. Despite the downside of needing a cryostat, it is shown that—when selecting proper conditions—a cryogenic two-step pulsed mode can be used as a successful technique to achieve high speed and selective plasma etching with an etch rate around 25 µm min-1 (<1% silicon load) with nearly vertical walls and resist etch selectivity beyond 1000. With the model in hand, it can be predicted that the etch rate can be doubled (50 µm min-1 at an efficiency of 33% for the fluorine generation from the SF6 feed gas) by minimizing the time the free radicals need to pass the diffusion zone. It is anticipated that this residence time can be reduced sufficiently by a proper inductive coupled plasma (ICP) source design (e.g. plasma shower head and concentrator). In order to preserve the correct profile at such high etch rates, the pressure during the bottom removal step should be minimized and, therefore, the synchronized three-step pulsed mode is believed to be essential to reach such high etch rates with sufficient profile control. In order to improve the etch rate even further, the ICP power should be enhanced; the upgrading of the turbopump seems not yet to be relevant because the throttle valve in the current study had to be used to restrict the turbo efficiency. In order to have a versatile list of state-of-the-art references, it has been decided to arrange it in subjects. The categories concerning plasma physics and applications are, for example, books, reviews, general topics, fluorine-based plasmas, plasma mixtures with oxygen at room temperature, wafer heat transfer and high aspect ratio trench (HART) etching. For readers 'new' to this field, it is advisable to study at least one (but rather more than one) of the reviews concerning plasma as found in the first 30 references. In many cases, a paper can be classified into more than one category. In such cases, the paper is directed to the subject most suited for the discussion of the current review. For example, many papers on heat transfer also treat cryogenic conditions and all the references dealing with highly anisotropic behaviour have been directed to the category HARTs. Additional pointers could get around this problem but have the disadvantage of creating a kind of written spaghetti. I hope that the adapted organization structure will help to have a quick look at and understanding of current developments in high aspect ratio plasma etching. Enjoy reading... Henri Jansen 18 June 2008

Dry etching of copper phthalocyanine thin films: effects on morphology and surface stoichiometry.

PubMed

Van Dijken, Jaron G; Brett, Michael J

2012-08-24

We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

PubMed Central

2014-01-01

Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

Apparatus and method for plasma processing of SRF cavities

NASA Astrophysics Data System (ADS)

Upadhyay, J.; Im, Do; Peshl, J.; Bašović, M.; Popović, S.; Valente-Feliciano, A.-M.; Phillips, L.; Vušković, L.

2016-05-01

An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for resonant generation of the particle accelerating field. The etch rate non-uniformity due to depletion of the radicals has been overcome by the simultaneous movement of the gas flow inlet and the inner electrode. An effective shape of the inner electrode to reduce the plasma asymmetry for the coaxial cylindrical rf plasma reactor is determined and implemented in the cavity processing method. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise way to establish segmented plasma columns. The test structure was a pillbox cavity made of steel of similar dimension to the standard SRF cavity. This was adopted to experimentally verify the plasma surface reaction on cylindrical structures with variable diameter using the segmented plasma generation approach. The pill box cavity is filled with niobium ring- and disk-type samples and the etch rate of these samples was measured.

Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment

NASA Astrophysics Data System (ADS)

Zhong, Yaozong; Zhou, Yu; Gao, Hongwei; Dai, Shujun; He, Junlei; Feng, Meixin; Sun, Qian; Zhang, Jijun; Zhao, Yanfei; DingSun, An; Yang, Hui

2017-10-01

Etching of GaN/AlGaN heterostructure by O-containing inductively coupled Cl2/N2 plasma with a low-energy ion bombardment can be self-terminated at the surface of the AlGaN layer. The estimated etching rates of GaN and AlGaN were 42 and 0.6 nm/min, respectively, giving a selective etching ratio of 70:1. To study the mechanism of the etching self-termination, detailed characterization and analyses were carried out, including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). It was found that in the presence of oxygen, the top surface of the AlGaN layer was converted into a thin film of (Al,Ga)Ox with a high bonding energy, which effectively prevented the underlying atoms from a further etching, resulting in a nearly self-terminated etching. This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

Qualitative modeling of silica plasma etching using neural network

NASA Astrophysics Data System (ADS)

Kim, Byungwhan; Kwon, Kwang Ho

2003-01-01

An etching of silica thin film is qualitatively modeled by using a neural network. The process was characterized by a 23 full factorial experiment plus one center point, in which the experimental factors and ranges include 100-800 W radio-frequency source power, 100-400 W bias power and gas flow rate ratio CHF3/CF4. The gas flow rate ratio varied from 0.2 to 5.0. The backpropagation neural network (BPNN) was trained on nine experiments and tested on six experiments, not pertaining to the original training data. The prediction ability of the BPNN was optimized as a function of the training parameters. Prediction errors are 180 Å/min and 1.33, for the etch rate and anisotropy models, respectively. Physical etch mechanisms were estimated from the three-dimensional plots generated from the optimized models. Predicted response surfaces were consistent with experimentally measured etch data. The dc bias was correlated to the etch responses to evaluate its contribution. Both the source power (plasma density) and bias power (ion directionality) strongly affected the etch rate. The source power was the most influential factor for the etch rate. A conflicting effect between the source and bias powers was noticed with respect to the anisotropy. The dc bias played an important role in understanding or separating physical etch mechanisms.

Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C 4F 8 and Ar/CHF 3 Plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2016-09-08

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Yunpeng; Sawin, Herbert H.

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO{sub 2}), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followedmore » the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Method of fabricating vertically aligned group III-V nanowires

DOEpatents

Wang, George T; Li, Qiming

2014-11-25

A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

Fast and controlled fabrication of porous graphene oxide: application of AFM tapping for mechano-chemistry

NASA Astrophysics Data System (ADS)

Chu, Liangyong; Korobko, Alexander V.; Bus, Marcel; Boshuizen, Bart; Sudhölter, Ernst J. R.; Besseling, Nicolaas A. M.

2018-05-01

This paper describes a novel method to fabricate porous graphene oxide (PGO) from GO by exposure to oxygen plasma. Compared to other methods to fabricate PGO described so far, e.g. the thermal and steam etching methods, oxygen plasma etching method is much faster. We studied the development of the porosity with exposure time using atomic force microscopy (AFM). It was found that the development of PGO upon oxygen-plasma exposure can be controlled by tapping mode AFM scanning using a Si tip. AFM tapping stalls the growth of pores upon further plasma exposure at a level that coincides with the fraction of sp2 carbons in the GO starting material. We suggest that AFM tapping procedure changes the bond structure of the intermediate PGO structure, and these stabilized PGO structures cannot be further etched by oxygen plasma. This constitutes the first report of tapping AFM as a tool for local mechano-chemistry.

Fast and controlled fabrication of porous graphene oxide: application of AFM tapping for mechano-chemistry.

PubMed

Chu, Liangyong; Korobko, Alexander V; Bus, Marcel; Boshuizen, Bart; Sudhölter, Ernst J R; Besseling, Nicolaas A M

2018-05-04

This paper describes a novel method to fabricate porous graphene oxide (PGO) from GO by exposure to oxygen plasma. Compared to other methods to fabricate PGO described so far, e.g. the thermal and steam etching methods, oxygen plasma etching method is much faster. We studied the development of the porosity with exposure time using atomic force microscopy (AFM). It was found that the development of PGO upon oxygen-plasma exposure can be controlled by tapping mode AFM scanning using a Si tip. AFM tapping stalls the growth of pores upon further plasma exposure at a level that coincides with the fraction of sp 2 carbons in the GO starting material. We suggest that AFM tapping procedure changes the bond structure of the intermediate PGO structure, and these stabilized PGO structures cannot be further etched by oxygen plasma. This constitutes the first report of tapping AFM as a tool for local mechano-chemistry.

Deep anisotropic ICP plasma etching designed for high-volume MEMS manufacturing

NASA Astrophysics Data System (ADS)

Yu, Keven; Feldbaum, Michael; Pandhumsoporn, Tam; Gadgil, Prashant

1999-08-01

ICP plasma etching is gaining widespread acceptance as an enabling micromachining technology for advanced MEMS fabrication. Whereas this technology has shown a capability of delivering multiple novel applications for R and D, its acceptance by industry for high volume production has been limited. This acceptance into production will only occur when the plasma etching equipment with this technology offers the device performance, throughput, reliability, and uptime criteria required by a production facility. The design of the plasma etcher using this technology and the process capability it consequently delivers, has significant implications in making this a reality. Alcatel has been supplying such a technology to this MEMS industry for over 5 years and in the interim has evolved its product and process to make this technology production worthy. Alcatel's next generation etcher, the Alcatel 601E, offers multiple advantages to MEMS manufacturers in realizing their production goals.

Wafer scale oblique angle plasma etching

DOEpatents

Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

2017-05-23

Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

Transport of a helicon plasma by a convergent magnetic field for high speed and compact plasma etching

NASA Astrophysics Data System (ADS)

Takahashi, Kazunori; Motomura, Taisei; Ando, Akira; Kasashima, Yuji; Kikunaga, Kazuya; Uesugi, Fumihiko; Hara, Shiro

2014-10-01

A high density argon plasma produced in a compact helicon source is transported by a convergent magnetic field to the central region of a substrate located downstream of the source. The magnetic field converging near the source exit is applied by a solenoid and further converged by installing a permanent magnet (PM) behind the substrate, which is located downstream of the source exit. Then a higher plasma density above 5 × 1012 cm-3 can be obtained in 0.2 Pa argon near the substrate, compared with the case without the PM. As no noticeable changes in the radially integrated density near the substrate and the power transfer efficiency are detected when testing the source with and without the PM, it can be deduced that the convergent field provided by the PM plays a role in constricting the plasma rather than in improving the plasma production. Furthermore it is applied to physical ion etching of silicon and aluminum substrates; then high etching rates of 6.5 µm min-1 and 8 µm min-1 are obtained, respectively.

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

PubMed

Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

2014-07-14

We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

Review Article: Unraveling synergistic effects in plasma-surface processes by means of beam experiments

PubMed Central

von Keudell, Achim; Corbella, Carles

2017-01-01

The interaction of plasmas with surfaces is dominated by synergistic effects between incident ions and radicals. Film growth is accelerated by the ions, providing adsorption sites for incoming radicals. Chemical etching is accelerated by incident ions when chemical etching products are removed from the surface by ion sputtering. The latter is the essence of anisotropic etching in microelectronics, as elucidated by the seminal paper of Coburn and Winters [J. Appl. Phys. 50, 3189 (1979)]. However, ion-radical-synergisms play also an important role in a multitude of other systems, which are described in this article: (1) hydrocarbon thin film growth from methyl radicals and hydrogen atoms; (2) hydrocarbon thin film etching by ions and reactive neutrals; (3) plasma inactivation of bacteria; (4) plasma treatment of polymers; and (5) oxidation mechanisms during reactive magnetron sputtering of metal targets. All these mechanisms are unraveled by using a particle beam experiment to mimic the plasma–surface interface with the advantage of being able to control the species fluxes independently. It clearly shows that the mechanisms in action that had been described by Coburn and Winters [J. Appl. Phys. 50, 3189 (1979)] are ubiquitous. PMID:29104360

Selective etching of silicon carbide films

DOEpatents

Gao, Di; Howe, Roger T.; Maboudian, Roya

2006-12-19

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Plasma chemistry study of PLAD processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin Shu; Brumfield, Kyle; Liu, Lequn Jennifer

2012-11-06

Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of a dopant profile model. Several factors determine impurity profiles of PLAD process. The most significant factors are: plasma chemistry and deposition/etching characteristics of multi-ion species plasmas. In this paper, we present plasma chemistry and deposition/etching characteristics of PLAD processes versus co-gas dilutions. Four dopant plasmas including B{sub 2}H{sub 6}, BF{sub 3}, AsH{sub 3}, and PH{sub 3}, and two non-dopant plasmas including CH{submore » 4} and GeH{sub 4} are studied and demonstrated.« less

Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

NASA Astrophysics Data System (ADS)

Gray, David C.

1992-01-01

A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617 -253-5668; Fax 617-253-1690.) (Abstract shortened with permission of school.).

Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roychowdhury, A.; Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742; Dana, R.

We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF₆ plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100),more » and Nb(100), as well as a doped topological insulator Bi₂Se₃ at temperatures ranging from 30 mK to 9 K.« less

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

NASA Astrophysics Data System (ADS)

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

2015-08-01

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02786a

Recovery of GaN surface after reactive ion etching

NASA Astrophysics Data System (ADS)

Fan, Qian; Chevtchenko, S.; Ni, Xianfeng; Cho, Sang-Jun; Morko, Hadis

2006-02-01

Surface properties of GaN subjected to reactive ion etching and the impact on device performance have been investigated by surface potential, optical and electrical measurements. Different etching conditions were studied and essentially high power levels and low chamber pressures resulted in higher etch rates accompanying with the roughening of the surface morphology. Surface potential for the as-grown c-plane GaN was found to be in the range of 0.5~0.7 V using Scanning Kevin Probe Microscopy. However, after reactive ion etching at a power level of 300 W, it decreased to 0.1~0.2 V. A nearly linear reduction was observed on c-plane GaN with increasing power. The nonpolar a-plane GaN samples also showed large surface band bending before and after etching. Additionally, the intensity of the near band-edge photoluminescence decreased and the free carrier density increased after etching. These results suggest that the changes in the surface potential may originate from the formation of possible nitrogen vacancies and other surface oriented defects and adsorbates. To recover the etched surface, N II plasma, rapid thermal annealing, and etching in wet KOH were performed. For each of these methods, the surface potential was found to increase by 0.1~0.3 V, also the reverse leakage current in Schottky diodes fabricated on treated samples was reduced considerably compared with as-etched samples, which implies a partial-to-complete recovery from the plasma-induced damage.

Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina

NASA Astrophysics Data System (ADS)

Ozaki, Yuki; Ito, Shunya; Hiroshiba, Nobuya; Nakamura, Takahiro; Nakagawa, Masaru

2018-06-01

By scanning transmission electron microscopy and energy dispersive X-ray spectroscopy (STEM–EDS), we investigated the elemental depth profiles of organic electron beam resist films after the sequential infiltration synthesis (SIS) of inorganic alumina. Although a 40-nm-thick poly(methyl methacrylate) (PMMA) film was entirely hybridized with alumina, an uneven distribution was observed near the interface between the substrate and the resist as well as near the resist surface. The uneven distribution was observed around the center of a 100-nm-thick PMMA film. The thicknesses of the PMMA and CSAR62 resist films decreased almost linearly as functions of plasma etching period. The comparison of etching rate among oxygen reactive ion etching, C3F8 reactive ion beam etching (RIBE), and Ar ion beam milling suggested that the SIS treatment enhanced the etching resistance of the electron beam resists to chemical reactions rather than to ion collisions. We proposed oxygen- and Ar-assisted C3F8 RIBE for the fabrication of silica imprint molds by electron beam lithography.

Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tasaka, Akimasa, E-mail: aki-tasaka-load@yahoo.co.jp; Kotaka, Yuki; Oda, Atsushi

2014-09-01

In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the numbermore » of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.« less

Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

DTIC Science & Technology

2015-03-26

THIN - FILM - TRANSISTORS THESIS Thomas M. Donigan, First Lieutenant, USAF AFIT-ENG-MS-15-M-027 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR...DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS THESIS Presented to the Faculty Department of Electrical and...15-M-027 SUBTRACTIVE PLASMA-ASSISTED-ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu; Li, Chen

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and comparedmore » to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model.

PubMed

Saksø, H; Jakobsen, T; Saksø, M; Baas, J; Jakobsen, Ss; Soballe, K

2013-01-01

Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control)PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control)PC+ET (Acid Etch)PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical fixation was evaluated by push-out test and osseointegration by histomorphometry. The PSHA-coated implants were better osseointegrated than the three other groups on outer surface implant porosity (p<0.05) while there was no statistical difference in deep surface implant porosity when compared with nontreated implant. Within the deep surface implant porosity, there was more newly formed bone in the control group compared to the ET and ET+PCLN groups (p<0.05). In all compared groups, there was no statistical difference in any biomechanical parameter. In terms of osseointegration on outer surface implant porosity PC+PSHA was superior to the other three groups. Neither the acid etching nor the plasma cleaning offered any advantage in terms of implant osseointegration. There was no statistical difference in any of the biomechanical parameters among all groups in the press-fit model at 4 weeks of evaluation time.

Antifouling enhancement of polysulfone/TiO2 nanocomposite separation membrane by plasma etching

NASA Astrophysics Data System (ADS)

Chen, Z.; Yin, C.; Wang, S.; Ito, K.; Fu, Q. M.; Deng, Q. R.; Fu, P.; Lin, Z. D.; Zhang, Y.

2017-01-01

A polysulfone/TiO2 nanocomposite membrane was prepared via casting method, followed by the plasma etching of the membrane surface. Doppler broadened energy spectra vs. positron incident energy were employed to elucidate depth profiles of the nanostructure for the as-prepared and treated membranes. The results confirmed that the near-surface of the membrane was modified by the plasma treatment. The antifouling characteristics for the membranes, evaluated using the degradation of Rhodamin B, indicated that the plasma treatment enhances the photo catalytic ability of the membrane, suggesting that more TiO2 nanoparticles are exposed at the membrane surface after the plasma treatment as supported by the positron result.

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weilnboeck, F.; Metzler, D.; Kumar, N.

2011-12-26

Roughening of nanoscale polymer masks during plasma etching (PE) limits feature critical dimensions in current and future lithographic technologies. Roughness formation of 193 nm photoresist (PR) is mechanistically explained by plasma-induced changes in mechanical properties introduced at the PR surface ({approx}2 nm) by ions and in parallel in the material bulk ({approx}200 nm) by ultraviolet (UV) plasma radiation. Synergistic roughening of polymer masks can be prevented by pretreating PR patterns with a high dose of He plasma UV exposure to saturate bulk material modifications. During subsequent PE, PR patterns are stabilized and exhibit improved etch resistance and reduced surface/line-edge roughness.

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

NASA Astrophysics Data System (ADS)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

NASA Astrophysics Data System (ADS)

Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

2018-05-01

In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

Addition of Si-Containing Gases for Anisotropic Etching of III-V Materials in Chlorine-Based Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Gatilova, Lina; Bouchoule, Sophie; Patriarche, Gilles; Guilet, Stephane

2011-08-01

We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl2- and HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH4 or SiCl4). A vertical and smooth etching profile is demonstrated in SiCl4/H2 plasma. The effect of adding of a small amount of SiH4 to a previously optimised Cl2/H2 chemistry is presented, and new SiH4/Cl2 and SiH4/HBr chemistries are proposed. Ex-situ energy-dispersive X-ray spectroscopy coupled to transmission electron microscopy (EDX-TEM) is used to analyze the composition of the thin passivation layer deposited on the etched sidewalls. We show that it consists of a Si-rich silicon oxide (Si/O˜1) in Cl2/H2/SiH4 chemistry, and is changed to nano-crystalline (nc-) Si in SiH4/Cl2 chemistry depending on the SiH4 percentage. Moreover, we show that deep anisotropic etching of InP independent of the electrode coverplate material can be obtained via a SiOx passivation mechanism with the addition of Si-containing gases.

A plasmaless, photochemical etch process for porous organosilicate glass films

NASA Astrophysics Data System (ADS)

Ryan, E. Todd; Molis, Steven E.

2017-12-01

A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

Effects of oxygen plasma etching on Sb{sub 2}Te{sub 3} explored by torque detected quantum oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Yuan, E-mail: yuan.yan@pi1.physik.uni-stuttgart.de, E-mail: martin.dressel@pi1.physik.uni-stuttgart.de; Heintze, Eric; Pracht, Uwe S.

2016-04-25

De Haas–van Alphen measurements evidence that oxygen plasma etching strongly affects the properties of the three-dimensional topological insulator Sb{sub 2}Te{sub 3}. The quantum oscillations in magnetization down to low temperature (T ≥ 2 K) and high magnetic field (B ≤ 7 T) have been systematically investigated using a high-sensitive cantilever torque magnetometer. The effective mass and the oscillation frequency obtained from de Haas–van Alphen measurements first increase and then decrease as the oxygen plasma etching time increases from 0 to 12 min, corresponding to an up- and down-shift of the Dirac point. We establish the cantilever torque magnetometer as a powerful contactless tool to investigate themore » oxygen sensitivity of the surface state in topological insulators.« less

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Oxygen plasma etching of graphene: A first-principles dynamical inspection of the reaction mechanisms and related activation barriers

NASA Astrophysics Data System (ADS)

Koizumi, Kenichi; Boero, Mauro; Shigeta, Yasuteru; Oshiyama, Atsushi; Dept. of Applied Physics Team; Institute of Physics and Chemistry of Strasbourg (IPCMS) Collaboration; Department Of Materials Engineering Science Collaboration

2013-03-01

Oxygen plasma etching is a crucial step in the fabrication of electronic circuits and has recently received a renovated interest in view of the realization of carbon-based nanodevices. In an attempt at unraveling the atomic-scale details and to provide guidelines for the control of the etching processes mechanisms, we inspected the possible reaction pathways via reactive first principles simulations. These processes involve breaking and formation of several chemical bonds and are characterized by different free-energy barriers. Free-energy sampling techniques (metadynamics and blue moon), used to enhance the standard Car-Parrinello molecular dynamics, provide us a detailed microscopic picture of the etching of graphene surfaces and a comprehensive scenario of the activation barriers involved in the various steps. MEXT, Japan - contract N. 22104005

Characterization of Low Noise TES Detectors Fabricated by D-RIE Process for SAFARI Short-Wavelength Band

NASA Astrophysics Data System (ADS)

Khosropanah, P.; Suzuki, T.; Hijmering, R. A.; Ridder, M. L.; Lindeman, M. A.; Gao, J.-R.; Hoevers, H.

2014-08-01

SRON is developing TES detectors based on a superconducting Ti/Au bilayer on a suspended SiN membrane for the short-wavelength band of the SAFARI instrument on SPICA mission. We have recently replaced the wet KOH etching of the Si substrate by deep reactive ion etching. The new process enables us to fabricate the detectors on the substrate and release the membrane at the very last step. Therefore the production of SAFARI large arrays (4343) on thin SiN membrane (250 nm) is feasible. It also makes it possible to realize narrow supporting SiN legs of 1 m, which are needed to meet SAFARI NEP requirements. Here we report the current-voltage characteristics, noise performance and impedance measurement of these devices. The measured results are then compared with the distributed leg model that takes into account the thermal fluctuation noise due to the SiN legs. We measured a dark NEP of 0.7 aW/, which is 1.6 times higher than the theoretically expected phonon noise.

Dielectrophoretic trapping of DNA-coated gold nanoparticles on silicon based vertical nanogap devices.

PubMed

Strobel, Sebastian; Sperling, Ralph A; Fenk, Bernhard; Parak, Wolfgang J; Tornow, Marc

2011-06-07

We report on the successful dielectrophoretic trapping and electrical characterization of DNA-coated gold nanoparticles on vertical nanogap devices (VNDs). The nanogap devices with an electrode distance of 13 nm were fabricated from Silicon-on-Insulator (SOI) material using a combination of anisotropic reactive ion etching (RIE), selective wet chemical etching and metal thin-film deposition. Au nanoparticles (diameter 40 nm) coated with a monolayer of dithiolated 8 base pairs double stranded DNA were dielectrophoretically trapped into the nanogap from electrolyte buffer solution at MHz frequencies as verified by scanning and transmission electron microscopy (SEM/TEM) analysis. First electrical transport measurements through the formed DNA-Au-DNA junctions partially revealed an approximately linear current-voltage characteristic with resistance in the range of 2-4 GΩ when measured in solution. Our findings point to the importance of strong covalent bonding to the electrodes in order to observe DNA conductance, both in solution and in the dry state. We propose our setup for novel applications in biosensing, addressing the direct interaction of biomolecular species with DNA in aqueous electrolyte media.

Anisotropic Etching Using Reactive Cluster Beams

NASA Astrophysics Data System (ADS)

Koike, Kunihiko; Yoshino, Yu; Senoo, Takehiko; Seki, Toshio; Ninomiya, Satoshi; Aoki, Takaaki; Matsuo, Jiro

2010-12-01

The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 µm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO2 was at least 1:1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

NASA Astrophysics Data System (ADS)

Izumi, Shouichiro; Minami, Masaki; Kamada, Michiru; Tatsumi, Tetsuya; Yamaguchi, Atsushi A.; Ishikawa, Kenji; Hori, Masaru; Tomiya, Shigetaka

2013-08-01

Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (˜60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.

Silicon cells made by self-aligned selective-emitter plasma-etchback process

DOEpatents

Ruby, Douglas S.; Schubert, William K.; Gee, James M.; Zaidi, Saleem H.

2000-01-01

Photovoltaic cells and methods for making them are disclosed wherein the metallized grids of the cells are used to mask portions of cell emitter regions to allow selective etching of phosphorus-doped emitter regions. The preferred etchant is SF.sub.6 or a combination of SF.sub.6 and O.sub.2. This self-aligned selective etching allows for enhanced blue response (versus cells with uniform heavy doping of the emitter) while preserving heavier doping in the region beneath the gridlines needed for low contact resistance. Embodiments are disclosed for making cells with or without textured surfaces. Optional steps include plasma hydrogenation and PECVD nitride deposition, each of which are suited to customized applications for requirements of given cells to be manufactured. The techniques disclosed could replace expensive and difficult alignment methodologies used to obtain selectively etched emitters, and they may be easily integrated with existing plasma processing methods and techniques of the invention may be accomplished in a single plasma-processing chamber.

Ion beam sputter etching and deposition of fluoropolymers

NASA Technical Reports Server (NTRS)

Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

1978-01-01

Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

Minimum reaction network necessary to describe Ar/CF4 plasma etch

NASA Astrophysics Data System (ADS)

Helpert, Sofia; Chopra, Meghali; Bonnecaze, Roger T.

2018-03-01

Predicting the etch and deposition profiles created using plasma processes is challenging due to the complexity of plasma discharges and plasma-surface interactions. Volume-averaged global models allow for efficient prediction of important processing parameters and provide a means to quickly determine the effect of a variety of process inputs on the plasma discharge. However, global models are limited based on simplifying assumptions to describe the chemical reaction network. Here a database of 128 reactions is compiled and their corresponding rate constants collected from 24 sources for an Ar/CF4 plasma using the platform RODEo (Recipe Optimization for Deposition and Etching). Six different reaction sets were tested which employed anywhere from 12 to all 128 reactions to evaluate the impact of the reaction database on particle species densities and electron temperature. Because many the reactions used in our database had conflicting rate constants as reported in literature, we also present a method to deal with those uncertainties when constructing the model which includes weighting each reaction rate and filtering outliers. By analyzing the link between a reaction's rate constant and its impact on the predicted plasma densities and electron temperatures, we determine the conditions at which a reaction is deemed necessary to the plasma model. The results of this study provide a foundation for determining which minimal set of reactions must be included in the reaction set of the plasma model.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

NASA Astrophysics Data System (ADS)

Landesman, Jean-Pierre; Cassidy, Daniel T.; Fouchier, Marc; Pargon, Erwine; Levallois, Christophe; Mokhtari, Merwan; Jimenez, Juan; Torres, Alfredo

2018-02-01

We investigated the crystal lattice deformation that can occur during the etching of structures in bulk InP using SiNx hard masks with Ar/Cl2/CH4 chemistries in an inductively coupled plasma reactor. Two techniques were used: degree of polarization (DOP) of the photo-luminescence, which gives information on the state of mechanical stress present in the structures, and spectrally resolved cathodo-luminescence (CL) mapping. This second technique also provides elements on the mechanical stress in the samples through analysis of the spectral shift of the CL intrinsic emission lines. Preliminary DOP mapping experiments have been conducted on the SiNx hard mask patterns without etching the underlying InP. This preliminary study demonstrated the potential of DOP to map mechanical stress quantitatively in the structures. In a second step, InP patterns with various widths between 1 μm and 20 μm, and various depths between 1 μm and 6 μm, were analyzed by the 2 techniques. DOP measurements were made both on the (100) top surface of the samples and on the (110) cleaved cross section. CL measurements were made only from the (100) surface. We observed that inside the etched features, close to the vertical etched walls, there is always some compressive deformation, while it is tensile just outside the etched features. The magnitude of these effects depends on the lateral and depth dimensions of the etched structures, and on the separation between them (the tensile deformation increases between them due to some kind of proximity effect when separation decreases).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yue, Mengyao; Zhou, Baoming; Jiao, Kunyan

A switchable surface that promotes either hydrophobic or hydrophilic wettability of poly (L-lactide) (PLLA) microfibrous membranes is obtained by CF₄ microwave plasma treatment in this paper. The results indicated that both etching and grafting process occurred during the CF₄ plasma treatment and these two factors synergistically affected the final surface wettability of PLLA membranes. When plasma treatment was taken under a relatively low power, the surface wettability of PLLA membranes turned from hydrophobic to hydrophilic. Especially when CF₄ plasma treatment was taken under 100 W for 10 min and 150 W for 5 min, the water contact angle sharply decreasedmore » from 116 ± 3.0° to ~0°. According to Field-emission scanning electron microscopy (FESEM) results, the PLLA fibers were notably etched by CF₄ plasma treatment. Combined with the X-ray photoelectron spectroscopy (XPS) measurements, only a few fluorine-containing groups were grafted onto the surface, so the etching effect directly affected the surface wettability of PLLA membranes in low plasma power condition. However, with the plasma power increasing to 200 W, the PLLA membrane surface turned to hydrophobic again. In contrast, the morphology changes of PLLA fiber surfaces were not obvious while a large number of fluorine-containing groups grafted onto the surface. So the grafting effect gradually became the major factor for the final surface wettability.« less

An investigation of supercritical-CO2 copper electroplating parameters for application in TSV chips

NASA Astrophysics Data System (ADS)

Chuang, Ho-Chiao; Lai, Wei-Hong; Sanchez, Jorge

2015-01-01

This study uses supercritical electroplating for the filling of through silicon vias (TSVs) in chips. The present study utilizes the inductively coupled plasma reactive ion etching (ICP RIE) process technique to etch the TSVs and discusses different supercritical-CO2 electroplating parameters, such as the supercritical pressure, the electroplating current density’s effect on the TSV Cu pillar filling time, the I-V curve, the electrical resistance and the hermeticity. In addition, the results for all the tests mentioned above have been compared to results from traditional electroplating techniques. For the testing, we will first discuss the hermeticity of the TSV Cu pillars, using a helium leaking test apparatus to assess the vacuum sealing of the fabricated TSV Cu pillars. In addition, this study also conducts tests for the electrical properties, which include the measurement of the electrical resistance of the TSV at both ends in the horizontal direction, followed by the passing of a high current (10 A, due to probe limitations) to check if the TSV can withstand it without burnout. Finally, the TSV is cut in half in cross-section to observe the filling of Cu pillars by the supercritical electroplating and check for voids. The important characteristic of this study is the use of the supercritical electroplating process without the addition of any surfactants to aid the filling of the TSVs, but by taking advantage of the high permeability and low surface tension of supercritical fluids to achieve our goal. The results of this investigation point to a supercritical pressure of 2000 psi and a current density of 3 A dm-2 giving off the best electroplating filling and hermeticity, while also being able to withstand a high current of 10 A, with a relatively short electroplating time of 3 h (when compared to our own traditional dc electroplating).

The influence of surface properties of plasma-etched polydimethylsiloxane (PDMS) on cell growth and morphology.

PubMed

Pennisi, Cristian P; Zachar, Vladimir; Gurevich, Leonid; Patriciu, Andrei; Struijk, Johannes J

2010-01-01

Polydimethylsiloxane (PDMS) or silicone rubber is a widely used implant material. Approaches to promote tissue integration to PDMS are desirable to avoid clinical problems associated with sliding and friction between tissue and implant. Plasma-etching is a useful way to control cell behavior on PDMS without additional coatings. In this work, different plasma processing conditions were used to modify the surface properties of PDMS substrates. Surface nanotopography and wettability were measured to study their effect on in vitro growth and morphology of fibroblasts. While fluorinated plasma treatments produced nanorough hydrophobic and superhydrophobic surfaces that had negative or little influences on cellular behavior, water vapor/oxygen plasma produced smooth hydrophillic surfaces that enhanced cell growth.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

PubMed

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, NoSoung; Ko, Heung Cho; Jung, Gun Young

2015-08-28

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Paradigm shifts in plasma processing and application of fundamental kinetics to problems targeting 5 nm technology device technology

NASA Astrophysics Data System (ADS)

Chen, Lee

2016-09-01

It is often said that semiconductor technology is approaching the end of scaling. While fundamental device limits do approach, plasma etching has been doing the heavy lifting to supplement the basic limits in lithography. RF plasmas, pulsing in many forms, diffusion plasmas are but a few of the important developments over the last 20 years that have succeeded in the seemingly impossible tasks. The commonality of these plasmas is being self-consistent: their near-Boltzmann EEDf maintains ionization with its tail while providing charge-balance with its Te . To control the plasma chemistry is to control its EEDf; the entanglement of ionization with charge-balance in self-consistent plasmas places a constraint on the decoupling of plasma chemistry from ionization. Example like DC/RF parallel-plate hybridizes stochastic heating with DC-cathode injected e- -beam. While such arrangement offers some level of decoupling, it raised more questions than what it helped answered along the lines of beam-plasma instabilities, bounce-resonance ionization, etc. Pure e- -beam plasmas could be a drastic departure from the self-consistent plasmas. Examples like the NRL e- -beam system and the more recent TEL NEP (Nonambipolar e- Plasma) show strong decoupling of Te from ionization but it is almost certain, many more questions lurk: the functions connecting collisional relaxation with instabilities, the channels causing the dissociation of large fluorocarbons (controlling the ion-to- radical ratio), the production of the damaging deep UV in e- -beam plasmas, etc., and the list goes on. IADf is one factor on feature-profile and IEDf determines the surgical surface-excitation governing the selectivity, and both functions have Ti as the origin; what controls the e- -beam plasmas' Ti ? RF-bias has served well in applications requiring energetic excitation but, are there ways to improve the IEDf tightness? What are the adverse side-effects of ``improved IEDf''? Decades ago an infant RF-plasma was thrown into the dry-etch arena and it hit the ground running with much of the understandings as after the facts. While the etching industry enjoys the heavy lifting by the successful self-consistent plasmas, perhaps time can be used on front-loaded soul searching of the ``maybe needed'' plasmas, for the future etching needs.

Switchable hydrophobic/hydrophilic surface of electrospun poly (l-lactide) membranes obtained by CF₄microwave plasma treatment

DOE PAGES

Yue, Mengyao; Zhou, Baoming; Jiao, Kunyan; ...

2014-11-29

A switchable surface that promotes either hydrophobic or hydrophilic wettability of poly (L-lactide) (PLLA) microfibrous membranes is obtained by CF₄ microwave plasma treatment in this paper. The results indicated that both etching and grafting process occurred during the CF₄ plasma treatment and these two factors synergistically affected the final surface wettability of PLLA membranes. When plasma treatment was taken under a relatively low power, the surface wettability of PLLA membranes turned from hydrophobic to hydrophilic. Especially when CF₄ plasma treatment was taken under 100 W for 10 min and 150 W for 5 min, the water contact angle sharply decreasedmore » from 116 ± 3.0° to ~0°. According to Field-emission scanning electron microscopy (FESEM) results, the PLLA fibers were notably etched by CF₄ plasma treatment. Combined with the X-ray photoelectron spectroscopy (XPS) measurements, only a few fluorine-containing groups were grafted onto the surface, so the etching effect directly affected the surface wettability of PLLA membranes in low plasma power condition. However, with the plasma power increasing to 200 W, the PLLA membrane surface turned to hydrophobic again. In contrast, the morphology changes of PLLA fiber surfaces were not obvious while a large number of fluorine-containing groups grafted onto the surface. So the grafting effect gradually became the major factor for the final surface wettability.« less

Measurement of the surface charge accumulation using anodic aluminum oxide(AAO) structure in an inductively coupled plasma

NASA Astrophysics Data System (ADS)

Park, Ji-Hwan; Oh, Seung-Ju; Lee, Hyo-Chang; Kim, Yu-Sin; Kim, Young-Cheol; Kim, June Young; Ha, Chang-Seoung; Kwon, Soon-Ho; Lee, Jung-Joong; Chung, Chin-Wook

2014-10-01

As the critical dimension of the nano-device shrinks, an undesired etch profile occurs during plasma etch process. One of the reasons is the local electric field due to the surface charge accumulation. To demonstrate the surface charge accumulation, an anodic aluminum oxide (AAO) membrane which has high aspect ratio is used. The potential difference between top electrode and bottom electrode in an anodic aluminum oxide contact structure is measured during inductively coupled plasma exposure. The voltage difference is changed with external discharge conditions, such as gas pressure, input power, and gas species and the result is analyzed with the measured plasma parameters.

Highlights of 10th plasma chemistry meeting

NASA Technical Reports Server (NTRS)

Kitamura, K.; Hashimoto, H.; Hozumi, K.

1981-01-01

The chemical structure is given of a film formed by plasma polymerization from pyridine monomers. The film has a hydrophilic chemical structure, its molecular weight is 900, and the molecular system is C55H50N10O3. The electrical characteristics of a plasma polymerized film are described. The film has good insulating properties and was successfully applied as video disc coating. Etching resistance properties make it possible to use the film as a resist in etching. The characteristics of plasma polymer formed from monomers containing tetramethyltin are discussed. The polymer is in film form, displays good adhesiveness, is similar to UV film UV 35 in light absorption and is highly insulating.

Nanohole and dot patterning processes on quartz substrate by R-θ electron beam lithography and nanoimprinting

NASA Astrophysics Data System (ADS)

Watanabe, Tsuyoshi; Taniguchi, Kazutake; Suzuki, Kouta; Iyama, Hiromasa; Kishimoto, Shuji; Sato, Takashi; Kobayashi, Hideo

2016-06-01

Fine hole and dot patterns with bit pitches (bp’s) of less than 40 nm were fabricated in the circular band area of a quartz substrate by R-θ electron beam lithography (EBL), reactive ion etching (RIE), and nanoimprinting. These patterning processes were studied to obtain minimum pitch sizes of hole and dot patterns without pattern collapse. The patterning on the circular band was aimed to apply these patterning processes to future high-density bit-patterned media (BPM) for hard disk drive (HDD) and permanent memory for the long life archiving of digital data. In hole patterning, a minimum-22-nm-bp and 8.2-nm-diameter pattern (1.3 Tbit/in.2) was obtained on a quartz substrate by optimizing the R-θ EBL and RIE processes. Dot patterns were replicated on another quartz substrate by nanoimprinting using a hole-patterned quartz substrate as a master mold followed by RIE. In dot patterning, a minimum-30-nm-bp and 18.5-nm-diameter pattern (0.7 Tbit/in.2) was obtained by introducing new descum conditions. It was observed that the minimum bp of successful patterning increased as the fabrication process proceeded, i.e., from 20 nm bp in the first EBL process to 30 nm bp in the last quartz dot patterning process. From the measured diameters of the patterns, it was revealed that pattern collapse was apt to occur when the value of average diameter plus 3 sigma of diameter was close to the bp. It was suggested that multiple fabrication processes caused the degradation of pattern quality; therefore, hole patterning is more suitable than dot patterning for future applications owing to the lower quality degradation by its simple fabrication process.

Challenges of nickel silicidation in CMOS technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet

2015-04-01

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of themore » nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.« less

Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching

NASA Astrophysics Data System (ADS)

Kwon, Yongbeom; Lee, Geonyeop; Oh, Sooyeoun; Kim, Jihyun; Pearton, Stephen J.; Ren, Fan

2017-03-01

We demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique. Mechanical exfoliation of the bulk β-Ga2O3 by using an adhesive tape was followed by plasma etching to tune its thickness. Since β-Ga2O3 is not a van der Waals material, it is challenging to obtain ultra-thin flakes below a thickness of 100 nm. In this study, an etch rate of approximately 16 nm/min was achieved at a power of 200 W with a flow of 50 sccm of SF6, and under these conditions, thinning of β-Ga2O3 flakes from 300 nm down to ˜60 nm was achieved with smooth morphology. We believe that the reaction between SF6 and Ga2O3 results in oxygen and volatile oxygen fluoride compounds, and non-volatile compounds such as GaFX that can be removed by ion bombardment. The opto-electrical properties were also characterized by fabricating solar-blind photodetectors using the plasma-thinned β-Ga2O3 flakes; these detectors showed fast response and decay with excellent responsivity and selectivity. Our results pave the way for tuning the thickness of two-dimensional materials by using this scalable, industry-compatible dry etching technique.

Prediction of silicon oxynitride plasma etching using a generalized regression neural network

NASA Astrophysics Data System (ADS)

Kim, Byungwhan; Lee, Byung Teak

2005-08-01

A prediction model of silicon oxynitride (SiON) etching was constructed using a neural network. Model prediction performance was improved by means of genetic algorithm. The etching was conducted in a C2F6 inductively coupled plasma. A 24 full factorial experiment was employed to systematically characterize parameter effects on SiON etching. The process parameters include radio frequency source power, bias power, pressure, and C2F6 flow rate. To test the appropriateness of the trained model, additional 16 experiments were conducted. For comparison, four types of statistical regression models were built. Compared to the best regression model, the optimized neural network model demonstrated an improvement of about 52%. The optimized model was used to infer etch mechanisms as a function of parameters. The pressure effect was noticeably large only as relatively large ion bombardment was maintained in the process chamber. Ion-bombardment-activated polymer deposition played the most significant role in interpreting the complex effect of bias power or C2F6 flow rate. Moreover, [CF2] was expected to be the predominant precursor to polymer deposition.

Etch Profile Simulation Using Level Set Methods

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1997-01-01

Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

NASA Astrophysics Data System (ADS)

Upadhyay, J.; Palczewski, A.; Popović, S.; Valente-Feliciano, A.-M.; Im, Do; Phillips, H. L.; Vušković, L.

2017-12-01

An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity's inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr; Jiménez, Juan; Torres, Alfredo

The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structuremore » on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion mass spectrometry indicates penetration of chlorine in the structures. Transmission electron microscopy is used to characterize the quantum well structure before and after plasma bombardment. By examining carefully the luminescence spectral properties, the authors could demonstrate the influence of the etching plasmas on the built-in electric field (in the case of doped samples), and relate it to some ionic species penetrating the structures. Etching plasmas involving both chlorine and nitrogen have also been studied. The etching rate for these chemistries is much slower than for some of the silicon tetrachloride based chemistries. Their effects on the samples are also very different, showing much reduced effect on the built-in electric field (for the doped samples), but significant blue-shifts of the luminescence peaks that the authors attributed to the penetration of nitrogen in the structures. Nitrogen, in interstitial locations, induces mechanical compressive stress that accounts for the blue-shifts. Finally, from the comparison between secondary ion mass spectrometry and luminescence spectra, the authors suggest some elements for a general mechanism involved in the etching by chloride-chemistries, in which a competition takes place between the species at the surface, active for the etching mechanism, and the species that penetrate the structure, lost for the etching process, but relevant in terms of impact on the electro-optic and structural features of the exposed materials.« less

Infrared gas phase study on plasma-polymer interactions in high-current diffuse dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Liu, Y.; Welzel, S.; Starostin, S. A.; van de Sanden, M. C. M.; Engeln, R.; de Vries, H. W.

2017-06-01

A roll-to-roll high-current diffuse dielectric barrier discharge at atmospheric pressure was operated in air and Ar/N2/O2 gas mixtures. The exhaust gas from the discharge was studied using a high-resolution Fourier-transform infrared spectrometer in the range from 3000 to 750 cm-1 to unravel the plasma-polymer interactions. The absorption features of HxNyOz, COx, and HCOOH (formic acid) were identified, and the relative densities were deduced by fitting the absorption bands of the detected molecules. Strong interactions between plasma and polymer (Polyethylene-2,6-naphthalate, or PEN) in precursor-free oxygen-containing gas mixtures were observed as evidenced by a high COx production. The presence of HCOOH in the gas effluent, formed through plasma-chemical synthesis of COx, turns out to be a sensitive indicator for etching. By adding tetraethylorthosilicate precursor in the plasma, dramatic changes in the COx production were measured, and two distinct deposition regimes were identified. At high precursor flows, a good agreement with the precursor combustion and the COx production was observed, whereas at low precursor flows an etching-deposition regime transpires, and the COx production is dominated by polymer etching.

Method for Cleaning Laser-Drilled Holes on Printed Wiring Boards by Plasma Treatment

NASA Astrophysics Data System (ADS)

Hirogaki, Toshiki; Aoyama, Eiichi; Minagi, Ryu; Ogawa, Keiji; Katayama, Tsutao; Matsuoka, Takashi; Inoue, Hisahiro

We propose a new method for cleaning blind via holes after laser drilling of PWBs using oxygen plasma treatment. This report dealt with three kinds of PWB materials: epoxy resin and two kinds of aramid fiber reinforced plastics (AFRP: Technora or Kevlar fiber reinforcement). We observed the drilled holes after plasma treatment using both an optical and a scanning electric microscope (SEM). It was confirmed that adequate etching took place in the drilled holes by plasma treatment. We also compared the hole wall and hole bottom after plasma treatment with ones after chemical etching. It was clear that there was no damage to the aramid fiber tip on the hole wall, and that a smooth roughness of the hole wall was obtained by means of plasma treatment. As a result, we demonstrated that the plasma treatment is effective in cleaning the laser drilled holes of PWBs.

Measurements and modeling of the impact of weak magnetic fields on the plasma properties of a planar slot antenna driven plasma source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshikawa, Jun, E-mail: jun.yoshikawa@tel.com; Susa, Yoshio; Ventzek, Peter L. G.

The radial line slot antenna plasma source is a type of surface wave plasma source driven by a planar slot antenna. Microwave power is transmitted through a slot antenna structure and dielectric window to a plasma characterized by a generation zone adjacent to the window and a diffusion zone that contacts a substrate. The diffusion zone is characterized by a very low electron temperature. This renders the source useful for soft etch applications and thin film deposition processes requiring low ion energy. Another property of the diffusion zone is that the plasma density tends to decrease from the axis tomore » the walls under the action of ambipolar diffusion at distances far from where the plasma is generated. A previous simulation study [Yoshikawa and. Ventzek, J. Vac. Sci. Technol. A 31, 031306 (2013)] predicted that the anisotropy in transport parameters due to weak static magnetic fields less than 50 G could be leveraged to manipulate the plasma profile in the radial direction. These simulations motivated experimental tests in which weak magnetic fields were applied to a radial line slot antenna source. Plasma absorption probe measurements of electron density and etch rate showed that the magnetic fields remote from the wafer were able to manipulate both parameters. A summary of these results is presented in this paper. Argon plasma simulation trends are compared with experimental plasma and etch rate measurements. A test of the impact of magnetic fields on charge up damage showed no perceptible negative effect.« less

40 CFR Table I-16 to Subpart I of... - Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

Code of Federal Regulations, 2014 CFR

2014-07-01

... Manufacturing: Plasma Etch/Wafer Clean Process Type: CF4 75 CH3F 97 CHF3 97 CH2F2 97 C2F6 97 C3F8 97 C4F6 97 C4F8 97 C5F8 97 SF6 97 NF3 96 All other carbon-based plasma etch/wafer clean fluorinated GHG 60 Chamber...

Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovic, Svetozar; Upadhyay, Janardan; Vuskovic, Leposava

2017-12-26

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the innermore » wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.« less

Wafer Scale Fabrication of Dense and High Aspect Ratio Sub-50 nm Nanopillars from Phase Separation of Cross-Linkable Polysiloxane/Polystyrene Blend.

PubMed

Li, Yang; Hao, Yuli; Huang, Chunyu; Chen, Xingyao; Chen, Xinyu; Cui, Yushuang; Yuan, Changsheng; Qiu, Kai; Ge, Haixiong; Chen, Yanfeng

2017-04-19

We demonstrated a simple and effective approach to fabricate dense and high aspect ratio sub-50 nm pillars based on phase separation of a polymer blend composed of a cross-linkable polysiloxane and polystyrene (PS). In order to obtain the phase-separated domains with nanoscale size, a liquid prepolymer of cross-linkable polysiloxane was employed as one moiety for increasing the miscibility of the polymer blend. After phase separation via spin-coating, the dispersed domains of liquid polysiloxane with sub-50 nm size could be solidified by UV exposure. The solidified polysiloxane domains took the role of etching mask for formation of high aspect ratio nanopillars by O 2 reactive ion etching (RIE). The aspect ratio of the nanopillars could be further amplified by introduction of a polymer transfer layer underneath the polymer blend film. The effects of spin speeds, the weight ratio of the polysiloxane/PS blend, and the concentration of polysiloxane/PS blend in toluene on the characters of the nanopillars were investigated. The gold-coated nanopillar arrays exhibited a high Raman scattering enhancement factor in the range of 10 8 -10 9 with high uniformity across over the wafer scale sample. A superhydrophobic surface could be realized by coating a self-assembled monolayers (SAM) of fluoroalkyltrichlorosilane on the nanopillar arrays. Sub-50 nm silicon nanowires (SiNWs) with high aspect ratio of about 1000 were achieved by using the nanopillars as etching mask through a metal-assisted chemical etching process. They showed an ultralow reflectance of approximately 0.1% for wavelengths ranging from 200 to 800 nm.

Selective Plasma Deposition of Fluorocarbon Films on SAMs

NASA Technical Reports Server (NTRS)

Crain, Mark M., III; Walsh, Kevin M.; Cohn, Robert W.

2006-01-01

A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu

2016-07-15

Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreasedmore » sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.« less

Plasma Processes for Semiconductor Fabrication

NASA Astrophysics Data System (ADS)

Hitchon, W. N. G.

1999-01-01

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

Nanotextured polymer substrates show enhanced cancer cell isolation and cell culture

NASA Astrophysics Data System (ADS)

Islam, Muhymin; Sajid, Adeel; Arif Iftakher Mahmood, M.; Motasim Bellah, Mohammad; Allen, Peter B.; Kim, Young-Tae; Iqbal, Samir M.

2015-06-01

Detection of circulating tumor cells (CTCs) in the early stages of cancer is a great challenge because of their exceedingly small concentration. There are only a few approaches sensitive enough to differentiate tumor cells from the plethora of other cells in a sample like blood. In order to detect CTCs, several antibodies and aptamers have already shown high affinity. Nanotexture can be used to mimic basement membrane to further enhance this affinity. This article reports an approach to fabricate nanotextured polydimethylsiloxane (PDMS) substrates using micro reactive ion etching (micro-RIE). Three recipes were used to prepare nanotextured PDMS using oxygen and carbon tetrafluoride. Micro-RIE provided better control on surface properties. Nanotexturing improved the affinity of PDMS surfaces to capture cancer cells using surface immobilized aptamers against cell membrane overexpressed with epidermal growth factor receptors. In all cases, nanotexture of PDMS increased the effective surface area by creating nanoscale roughness on the surface. Nanotexture also enhanced the growth rate of cultured cells compared to plain surfaces. A comparison among the three nanotextured surfaces demonstrated an almost linear relationship between the surface roughness and density of captured tumor cells. The nanotextured PDMS mimicked biophysical environments for cells to grow faster. This can have many implications in microfluidic platforms used for cell handling.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

PubMed

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

2018-05-29

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

NASA Technical Reports Server (NTRS)

Cappelli, Mark A.

1999-01-01

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.

Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

NASA Astrophysics Data System (ADS)

Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

2004-05-01

A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

Wide band laser-plasma soft X-ray source using a gas puff target for direct photo-etching of polymers

NASA Astrophysics Data System (ADS)

Bartnik, Andrzej; Fiedorowicz, Henryk; Jarocki, Roman; Kostecki, Jerzy; Rakowski, Rafał; Szczurek, Mirosław

2005-09-01

Organic polymers (PMMA, PTFE, PET, and PI) are considered as the important materials in microengineering, especially for biological and medical applications. Micromachining of such materials is possible with the use of different techniques that involve electromagnetic radiation or charged particle beams. Another possibility of high aspect ratio micromachining of PTFE is direct photo-etching using synchrotron radiation. X-ray and ultraviolet radiation from other sources, for micromachining of materials by direct photo-etching can be also applied. In this paper we present the results of investigation of a wide band soft X-ray source and its application for direct photo-etching of organic polymers. X-ray radiation in the wavelength range from about 3 nm to 20 nm was produced as a result of irradiation of a double-stream gas puff target with laser pulses of energy 0.8 J and time duration of about 3 ns. The spectra, plasma size and absolute energies of soft X-ray pulses for different gas puff targets were measured. Photo-etching process of polymers irradiated with the use of the soft X-ray radiation was analyzed and investigated. Samples of organic polymers were placed inside a vacuum chamber of the x-ray source, close to the gas puff target at the distance of about 2 cm from plasmas created by focused laser pulses. A fine metal grid placed in front of the samples was used as a mask to form structures by x-ray ablation. The results of photo-etching process for several minutes exposition with l0Hz repetition rate were presented. High ablation efficiency was obtained with the use of the gas puff target containing xenon surrounded by helium.

The chemistry screening for ultra low-k dielectrics plasma etching

NASA Astrophysics Data System (ADS)

Zotovich, A.; Krishtab, M.; Lazzarino, F.; Baklanov, M. R.

2014-12-01

Nowadays, some of the important problems in microelectronics technological node scaling down are related to interconnect delay, dynamic power consumption and crosstalk. This compels introduction and integration of new materials with low dielectric permittivity (low-k materials) as insulator in interconnects. One of such materials under consideration for sub 10 nm technology node is a spin-coated organosilicate glass layer with ordered porosity (37-40%) and a k-value of 2.2 (OSG 2.2). High porosity leads to significant challenges during the integration and one of them is a material degradation during the plasma etching. The low-k samples have been etched in a CCP double frequency plasma chamber from TEL. Standard recipes developed for microporous materials with k<2.5 and based on mixture of C4F8 and CF4 with N2, O2 and Ar were found significantly damaging for high-porous ULK materials. The standard etch recipe was compared with oxygen free etch chemistries based on mixture CF4 with CH2F2 and Ar assuming that the presence of oxygen in the first recipe will have significant negative impact in high porous ULK materials. The film damage has been analyzed using FTIR spectroscopy and the k-value has been extracted by capacitance CV-measurements. There was indirectly shown that vacuum ultraviolet photons cause the main damage of low-k, whereas radicals and ions are not so harmful. Trench structures have been etched in low-k film and cross-SEM analysis with and without HF dipping has been performed to reveal patterning capability and visualize the sidewall damage and. The bottom roughness was analyzed by AFM.

Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption

NASA Astrophysics Data System (ADS)

Kogelschatz, M.; Cunge, G.; Sadeghi, N.

2006-03-01

SiCl{x} radicals, the silicon etching by-products, are playing a major role in silicon gate etching processes because their redeposition on the wafer leads to the formation of a SiOCl{x} passivation layer on the feature sidewalls, which controls the final shape of the etching profile. These radicals are also the precursors to the formation of a similar layer on the reactor walls, leading to process drifts. As a result, the understanding and modelling of these processes rely on the knowledge of their densities in the plasma. Actinometry technique, based on optical emission, is often used to measure relative variations of the density of the above mentioned radicals, even if it is well known that the results obtained with this technique might not always be reliable. To determine the validity domain of actinometry in industrial silicon-etching high density plasmas, we measure the RF source power and pressure dependences of the absolute densities of SiCl{x} (x=0{-}2), SiF and SiBr radicals, deduced from UV broad band absorption spectroscopy. These results are compared to the evolution of the corresponding actinometry signals from these radicals. It is shown that actinometry predicts the global trends of the species density variations when the RF power is changed at constant pressure (that is to say when only the electron density changes) but it completely fails if the gas pressure, hence the electron temperature, changes.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

NASA Astrophysics Data System (ADS)

Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

2014-08-01

Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels

NASA Astrophysics Data System (ADS)

Wuu, Dong-Sing; Horng, Ray-Hua; Chan, Chia-Chi; Lee, Yih-Shing

1999-04-01

The stress properties of the a-SiC:H films on Si by plasma-enhanced chemical vapor deposition (PECVD) are investigated. It is found that the stability of the a-SiC:H films relates to Si-H bonds breaking and changes the stress toward tensile. No evident reduction in the content of Si-H bonds after thermal cycles was found in the carbon-rich samples. Moreover, a new method to fabricate microchannels by through-hole etching with subsequent planarization is proposed. The process is based on etching out the deep grooves through a perforated a-SiC:H membrane, where poly-Si is used as a sacrificial layer to define the channel structure, followed by PECVD sealing the SiC:H membrane. In order to improve the etching performance, the agitated KOH etch is performed at low temperatures (<50°C). The process technology is demonstrated on the fabrication of microfluidic channels with the low-stress (<0.1 GPa) a-SiC:H membranes.

High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces

NASA Astrophysics Data System (ADS)

Aoki, Toshichika; Wakayama, Hisashi; Kaneda, Naoki; Mishima, Tomoyoshi; Nomoto, Kazuki; Shiojima, Kenji

2013-11-01

The effects of the inductively coupled plasma (ICP) etching damage on the electrical characteristics of low-Mg-doped p-GaN Schottky contacts were evaluated by high-temperature isothermal capacitance transient spectroscopy. A large single peak for an acceptor-type surface state was dominantly detected for as-grown samples. The energy level and state density were obtained to be 1.18 eV above the valence band, which is close to a Ga vacancy (VGa), and 1.5×1013 cm-2, respectively. It was speculated that a small portion of Ga atoms were missing from the surface, and a high VGa density was observed in a few surface layers. The peak intensity decreased by 60% upon annealing at 800 °C, and further decrease was found by ICP etching. This decrease is consistent with the suppression of the memory effect in current-voltage characteristics. Upon annealing and ICP etching, since the VGa structure might be disordered, the peak intensity decreased.

Preparation of a new electro-optic polymer cross-linkable via copper-free thermal Huisgen cyclo-addition and fabrication of optical waveguides by Reactive Ion Etching.

PubMed

Cabanetos, Clément; Mahé, Hind; Blart, Errol; Pellegrin, Yann; Montembault, Véronique; Fontaine, Laurent; Adamietz, Frédéric; Rodriguez, Vincent; Bosc, Dominique; Odobel, Fabrice

2011-06-01

High-quality trails of ridge waveguides were successfully fabricated using a new cross-linkable polymer (PCC01) by UV photolithography followed by Reactive-Ion Etching (RIE) process. The cross-linking reaction of PCC01 is based on the copper-free Huisgen cyclo-addition between an azide and an acetylene group. The new cross-linkable polymer (PCC01) consists of a structural modification of the previously described materials (Scarpaci et al. Polym. Chem.2011, 2, 157), because the ethynyl group is functionalized by a methyl group instead of the TMS protecting group. This feature prevents the formation of silica (SiO(2)) generated by trimethylsilyl groups and which was stopping the engraving process before completion. Herein, we describe the synthesis, the NLO characterizations, and the fabrication of a high-quality ridge waveguide with PCC01. The new cross-linkable polymer PCC01 not only solves the problems encountered with our previously described polymers, but also presents an enhancement of the electro-optic stability, because d(33) coefficients up to 30 pm/V stable at 150 °C were recorded. © 2011 American Chemical Society

Concept Demonstration of Dopant Selective Reactive Etching (DSRIE) in Silicon Carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2015-01-01

Accurate quantification of combustor pressure dynamics for the primary purpose of experimental validation of computational fluid dynamics (CFD) codes requires the use of robust, reliable and sensitive pressure sensors that can resolve sub--pound-per-square-inch pressure levels in high temperature environments (i.e., combustor). The state of the art microfabricated piezoresistive silicon carbide (SiC) pressure sensors that we have developed are capable of operating reliably at 600 degrees Centigrade. This technology was used in support of the ARMD ISRP-ERA (NASA's Aeronautics Research Mission Directorate, Integrated System Research Project - Environmentally Responsible Aviation) program to quantify combustor thermoacoustic instabilities. The results showed that while the SiC pressure sensors survived the high temperature and measured instabilities, the diaphragm (force collector) was not thin enough to be sensitive in resolving sub-pound-per-square-inch pressures; 30 meters is the thinnest diaphragm achievable with conventional reactive ion etching (RIE) processes. Therefore, this precludes its use for sub-pound-per-square-inch pressure measurement with high fidelity. In order to effectively resolve sub-pound-per-square-inch pressures, a thinner more sensitive diaphragm (10 meters) is needed. To achieve this would require a new and innovative fabrication process technique.

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun

2010-07-15

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fittingmore » the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.« less

Superhydrophobic polymeric films with hierarchical structures produced by nanoimprint (NIL) and plasma roughening

NASA Astrophysics Data System (ADS)

Durret, Jérôme; Szkutnik, Pierre-David; Frolet, Nathalie; Labau, Sebastien; Gourgon, Cécile

2018-07-01

The structuration of various polymeric films has been studied to create superhydrophobic surfaces. Nanoimprint lithography and/or plasma etching processes with CF4/Ar have been used on FEP, PMMA and PET polymer films. On the one hand, the effect of the CF4/Ar gases, the input power and the plasma treatment duration have been investigated in terms of etching and fluorination degree, and XPS analyses are precisely discussed. On the other hand, wettability performances were characterized. Relationships between the contact angle, the contact angle hysteresis and the surface structures have been investigated. The wetting behaviors and the transition between the Wenzel and the Cassie-Baxter states was discussed as a function of the roughness. We have prepared each studied polymer films in transparent and flexible superhydrophobic surfaces whose contact angle are ∼160° and hysteresis are ∼2°. A short plasma treatment time (10 s) is sufficient to obtain a superhydrophobic behavior on FEP and PMMA. Results indicate that hierarchical structures allow a more stable superhydrophobic state regarding inhomogeneities. Moreover, the use of plasma etching is suggested to overcome some limitations of the NIL in the case of structures with a high aspect ratio. Finally, a quick and large surface fabrication method for superhydrophobic films is detailed.

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Low-temperature oxidizing plasma surface modification and composite polymer thin-film fabrication techniques for tailoring the composition and behavior of polymer surfaces

NASA Astrophysics Data System (ADS)

Tompkins, Brendan D.

This dissertation examines methods for modifying the composition and behavior of polymer material surfaces. This is accomplished using (1) low-temperature low-density oxidizing plasmas to etch and implant new functionality on polymers, and (2) plasma enhanced chemical vapor deposition (PECVD) techniques to fabricate composite polymer materials. Emphases are placed on the structure of modified polymer surfaces, the evolution of polymer surfaces after treatment, and the species responsible for modifying polymers during plasma processing. H2O vapor plasma modification of high-density polyethylene (HDPE), low-density polyethylene (LDPE), polypropylene (PP), polystyrene (PS), polycarbonate (PC), and 75A polyurethane (PU) was examined to further our understanding of polymer surface reorganization leading to hydrophobic recovery. Water contact angles (wCA) measurements showed that PP and PS were the most susceptible to hydrophobic recovery, while PC and HDPE were the most stable. X-ray photoelectron spectroscopy (XPS) revealed a significant quantity of polar functional groups on the surface of all treated polymer samples. Shifts in the C1s binding energies (BE) with sample age were measured on PP and PS, revealing that surface reorganization was responsible for hydrophobic recovery on these materials. Differential scanning calorimetry (DSC) was used to rule out the intrinsic thermal properties as the cause of reorganization and hydrophobic recovery on HDPE, LDPE, and PP. The different contributions that polymer cross-linking and chain scission mechanisms make to polymer aging effects are considered. The H2O plasma treatment technique was extended to the modification of 0.2 microm and 3.0 microm track-etched polycarbonate (PC-TE) and track-etched polyethylene terephthalate (PET-TE) membranes with the goal of permanently increasing the hydrophilicity of the membrane surfaces. Contact angle measurements on freshly treated and aged samples confirmed the wettability of the membrane surfaces was significantly improved by plasma treatment. XPS and SEM analyses revealed increased oxygen incorporation onto the surface of the membranes, without any damage to the surface or pore structure. Contact angle measurements on a membrane treated in a stacked assembly suggest the plasma effectively modified the entire pore cross section. Plasma treatment also increased water flux through the membranes, with results from plasma modified membranes matching those from commercially available hydrophilic membranes (treated with wetting agent). Mechanisms for the observed modification are discussed in terms of OH and O radicals implanting oxygen functionality into the polymers. Oxidizing plasma systems (O2, CO2, H2O vapor, and formic acid vapor) were used to modify track-etched polycarbonate membranes and explore the mechanisms and species responsible for etching polycarbonate during plasma processing. Etch rates were measured using scanning electron microscopy; modified polycarbonate surfaces were further characterized using x-ray photoelectron spectroscopy and water contact angles. Etch rates and surface characterization results were combined with optical emission spectroscopy data used to identify gas-phase species and their relative densities. Although the oxide functionalities implanted by each plasma system were similar, the H2O vapor and formic acid vapor plasmas yielded the lowest contact angles after treatment. The CO2, H2O vapor, and formic acid vapor plasma-modified surfaces were, however, found to be similarly stable one month after treatment. Overall, etch rate correlated directly to the relative gas-phase density of atomic oxygen and, to a lesser extent, hydroxyl radicals. PECVD of acetic acid vapor (CH3COOH) was used to deposit films on PC-TE and silicon wafer substrates. The CH3COOH films were characterized using XPS, wCA, and SEM. This modification technique resulted in continuous deposition and self-limiting deposition of a-CxO yHz films on Si wafers and PC-TE, respectively. The self-limiting deposition on PC-TE revealed that resulting films have minimal impact on 3D PC structures. This technique would allow for more precise fabrication of patterned or nano-textured PC. PECVD is used to synthesize hydrocarbon/fluorocarbon thin films with compositional gradients by continuously changing the ratio of gases in a C 3F8/H2 plasma. The films are characterized using variable angle spectroscopic ellipsometry (VASE), Fourier transform infrared spectroscopy (FTIR), XPS, wCA, and SEM. These methods revealed that shifting spectroscopic signals can be used to characterize organization in the deposited film. Using these methods, along with gas-phase diagnostics, film chemistry and the underlying deposition mechanisms are elucidated, leading to a model that accurately predicts film thickness.

Plasma treatment of polymers for improved adhesion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kelber, J.A.

1988-01-01

A variety of plasma treatments of polymer surfaces for improved adhesion are reviewed: noble and reactive gas treatment of fluoropolymers; noble and reactive treatment of polyolefins, and plasma-induced amination of polymer fibers. The plasma induced surface chemical and morphological changes are discussed, as are the mechanisms of adhesion to polymeric adhesives, particularly epoxy. Noble gas plasma etching of flouropolymers produces a partially defluorinated, textured surface. The mechanical interlocking of this textured surface is the primary cause of improved adhesion to epoxy. Reactive gas plasmas also induce defluorination, but oxygen containing gases cause continual ablation of the fluoropolymer surface. Noble andmore » reactive gas (exept for hydrogen) etching of polyolefins results in surface oxidation and improved adhesion via hydrogen bonding of these oxygen containing groups across the interface. The introduction of amine groups to a polymer surface by amonia or amine plasma treatment generally results in improved adhesion to epoxy. However, amine-epoxy ring interactions can be severely effected by steric factors due to chemical groups surrounding the amine. 41 refs.« less

Correlation study of actual temperature profile and in-line metrology measurements for within-wafer uniformity improvement and wafer edge yield enhancement (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fang, Fang; Vaid, Alok; Vinslava, Alina; Casselberry, Richard; Mishra, Shailendra; Dixit, Dhairya; Timoney, Padraig; Chu, Dinh; Porter, Candice; Song, Da; Ren, Zhou

2018-03-01

It is getting more important to monitor all aspects of influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity improvement and wafer edge yield enhancement. Meanwhile, we took a dive in pursuing "measuring what matters" and challenged ourselves for more aspects of signals acquired in actual process conditions. Among these factors which are considered subtle previously, we identified Temperature, especially electrostatic chuck (ESC) Temperature measurement in real etch process conditions have direct correlation to in-line measurements. In this work, we used SensArray technique (EtchTemp-SE wafer) to measure ESC temperature profile on a 300mm wafer with plasma turning on to reproduce actual temperature pattern on wafers in real production process conditions. In field applications, we observed substantial correlation between ESC temperature and in-line optical metrology measurements and since temperature is a process factor that can be tuning through set-temperature modulations, we have identified process knobs with known impact on physical profile variations. Furthermore, ESC temperature profile on a 300mm wafer is configured as multiple zones upon radius and SensArray measurements mechanism could catch such zonal distribution as well, which enables detailed temperature modulations targeting edge ring only where most of chips can be harvested and critical zone for yield enhancement. Last but not least, compared with control reference (ESC Temperature in static plasma-off status), we also get additional factors to investigate in chamber-to-chamber matching study and make process tool fleet match on the basis really matters in production. KLA-Tencor EtchTemp-SE wafer enables Plasma On wafer temperature monitoring of silicon etch process. This wafer is wireless and has 65 sensors with measurement range from 20 to 140°C. the wafer is designed to run in real production recipe plasma on condition with maximum RF power up to 7KW. The wafer surface is coated with Yttrium oxide film which allows Silicon Etch chemistry. At Fab-8, we carried investigations in 14 nm FEOL critical etch process which has direct impact on yield, using SensorArray EtchTemp-SE wafer, we measured ESC temperature profile across multiple chambers, for both plasma on and plasma off, promising results achieved on chamber temperature signature identification, guideline for chamber to chamber matching improvement. Correlation between wafer mean temperature and determining criticality-process parameters of recess depth and CD is observed. Furthermore, detail zonal temperature/profile correlation is investigated to identify individual correlation in each chuck zone, and provided unique process knobs corresponding to each chunk. Meanwhile, passive ESC Chuck DOE was done to modulate wafer temperature at different zones, and Sensor Array wafer measurements verified temperature responding well with the ESC set point. Correlation R2 = 0.9979 for outer ring and R2 = 0.9981 for Mid Outer ring is observed, as shown in . Experiments planning to modulate edge zone ESC temperature to tune profile within-wafer uniformity and prove gain in edge yield enhancement and to improve edge yield is underway.

Measurement of the Electron Density and the Attachment Rate Coefficient in Silane/Helium Discharges.

DTIC Science & Technology

1986-09-01

materials -- in this case hydrogenated amorphous silicon . One of the biggest problems in such a task is the fact that the discharge creates complex radicals...electron density is enhanced -- even on a time-averaged basis, and the silicon deposition rate is also increased. The physical process for the density...etching and deposition of semiconductor materials. Plasma etching (also known as dry etching) Of silicon using flourine bearing gases has made it possible

Optimization of plasma etching of SiO2 as hard mask for HgCdTe dry etching

NASA Astrophysics Data System (ADS)

Chen, Yiyu; Ye, Zhenhua; Sun, Changhong; Zhang, Shan; Xin, Wen; Hu, Xiaoning; Ding, Ruijun; He, Li

2016-10-01

HgCdTe is one of the dominating materials for infrared detection. To pattern this material, our group has proven the feasibility of SiO2 as a hard mask in dry etching process. In recent years, the SiO2 mask patterned by plasma with an auto-stopping layer of ZnS sandwiched between HgCdTe and SiO2 has been developed by our group. In this article, we will report the optimization of SiO2 etching on HgCdTe. The etching of SiO2 is very mature nowadays. Multiple etching recipes with deferent gas mixtures can be used. We utilized a recipe containing Ar and CHF3. With strictly controlled photolithography, the high aspect-ratio profile of SiO2 was firstly achieved on GaAs substrate. However, the same recipe could not work well on MCT because of the low thermal conductivity of HgCdTe and CdTe, resulting in overheated and deteriorated photoresist. By decreasing the temperature, the photoresist maintained its good profile. A starting table temperature around -5°C worked well enough. And a steep profile was achieved as checked by the SEM. Further decreasing of temperature introduced profile with beveled corner. The process window of the temperature is around 10°C. Reproducibility and uniformity were also confirmed for this recipe.

Development of speckle-free channel-cut crystal optics using plasma chemical vaporization machining for coherent x-ray applications.

PubMed

Hirano, Takashi; Osaka, Taito; Sano, Yasuhisa; Inubushi, Yuichi; Matsuyama, Satoshi; Tono, Kensuke; Ishikawa, Tetsuya; Yabashi, Makina; Yamauchi, Kazuto

2016-06-01

We have developed a method of fabricating speckle-free channel-cut crystal optics with plasma chemical vaporization machining, an etching method using atmospheric-pressure plasma, for coherent X-ray applications. We investigated the etching characteristics to silicon crystals and achieved a small surface roughness of less than 1 nm rms at a removal depth of >10 μm, which satisfies the requirements for eliminating subsurface damage while suppressing diffuse scattering from rough surfaces. We applied this method for fabricating channel-cut Si(220) crystals for a hard X-ray split-and-delay optical system and confirmed that the crystals provided speckle-free reflection profiles under coherent X-ray illumination.

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

NASA Astrophysics Data System (ADS)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

ScAlN etch mask for highly selective silicon etching

DOE PAGES

Henry, Michael David; Young, Travis R.; Griffin, Ben

2017-09-08

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer

NASA Astrophysics Data System (ADS)

Nagata, Masahiro; Shirahama, Ryouya; Duangchan, Sethavut; Baba, Akiyoshi

2018-06-01

We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-mean-square surface roughness of approximately 0.2–0.3 nm) and an ultrathin SiO2 bonding layer at an accuracy of approximately 5 nm in thickness to fabricate a silicon-on-diamond substrate (SOD). We also investigated a plasma activation method on a SiO2 surface using various gases. We found that O2 plasma activation is more suitable for the bonding between SiO2 and Si than N2 or Ar plasma activation. We speculate that the concentration of hydroxyl groups on the SiO2 surface was increased by O2 plasma activation. We fabricated the SOD substrate with an ultrathin (15 nm in thickness) SiO2 bonding layer using the sputter etching and O2 plasma activation methods.

Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

NASA Astrophysics Data System (ADS)

Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

2015-01-01

To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

Technical Highlights

Science.gov Websites

Hopkins) Summary of data on computational modeling and experimental validation of correlations between targetr chemistries and carry out plasma etching assessment 2014: Jane Chang (UCLA) Non-PFC plasma varying physiochemical ENs 2013: Shyam Aravamudhan (NC A&T) Non-PFC plasma chemistries for patterning

Mechanisms of Hydrocarbon Based Polymer Etch

NASA Astrophysics Data System (ADS)

Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

2015-09-01

Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch

DOEpatents

Morales, Alfredo M.; Gonzales, Marcela

2004-06-15

The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

Ion-enhanced chemical etching of ZrO2 in a chlorine discharge

NASA Astrophysics Data System (ADS)

Sha, Lin; Cho, Byeong-Ok; Chang, Jane P.

2002-09-01

Chlorine plasma is found to chemically etch ZrO2 thin films in an electron cyclotron resonance reactor, and the etch rate scaled linearly with the square root of ion energy at high ion energies with a threshold energy between 12-20 eV. The etching rate decreased monotonically with increasing chamber pressures, which corresponds to reduced electron temperatures. Optical emission spectroscopy and quadrupole mass spectrometry were used to identify the reaction etching products. No Zr, O, or ZrCl were detected as etching products, but highly chlorinated zirconium compounds (ZrCl2, ZrCl3, and ZrCl4) and ClO were found to be the dominant etching products. ZrCl3 was the dominant etching products at low ion energies, while ZrCl4 became dominant at higher ion energies. This is consistent with greater momentum transfer and enhanced surface chlorination, as determined by x-ray photoelectron spectroscopy, at increased ion energies. Several ion-enhanced chemical reactions are proposed to contribute to the ZrO2 etching. copyright 2002 American Vacuum Society.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis R.; Griffin, Ben

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Effect of a non-thermal, atmospheric-pressure, plasma brush on conversion of model self-etch adhesive formulations compared to conventional photo-polymerization

PubMed Central

Chen, Mingsheng; Zhang, Ying; Yao, Xiaomei; Li, Hao; Yu, Qingsong; Wang, Yong

2012-01-01

Objective To determine the effectiveness and efficiency of non-thermal, atmospheric plasmas for inducing polymerization of model dental self-etch adhesives. Methods The monomer mixtures used were bis-[2-(methacryloyloxy)ethyl] phosphate (2MP) and 2-hydroxyethyl methacrylate (HEMA), with mass ratios of 70/30, 50/50 and 30/70. Water was added to the above formulations: 10–30 wt%. These monomer/water mixtures were treated steadily for 40 s under a non-thermal atmospheric plasma brush working at temperatures from 32° to 35°C. For comparison, photo-initiators were added to the above formulations for photo-polymerization studies, which were light-cured for 40 s. The degree of conversion (DC) of both the plasma- and light-cured samples was measured using FTIR spectroscopy with an attenuated total reflectance attachment. Results The non-thermal plasma brush was effective in inducing polymerization of the model self-etch adhesives. The presence of water did not negatively affect the DC of plasma-cured samples. Indeed, DC values slightly increased, with increasing water content in adhesives: from 58.3% to 68.7% when the water content increased from 10% to 30% in the adhesives with a 50/50 (2MP/HEMA) mass ratio. Conversion values of the plasma-cured groups were higher than those of light-cured samples with the same mass ratio and water content. Spectral differences between the plasma- and light-cured groups indicate subtle structural distinctions in the resultant polymer networks. Significance This research if the first to demonstrate that the non-thermal plasma brush induces polymerization of model adhesives under clinical settings by direct/indirect energy transfer. This device shows promise for polymerization of dental composite restorations having enhanced properties and performance. PMID:23018084

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

NASA Astrophysics Data System (ADS)

Mack, M. P.; Abare, A. C.; Hansen, M.; Kozodoy, P.; Keller, S.; Mishra, U.; Coldren, L. A.; DenBaars, S. P.

1998-06-01

Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In 0.21Ga 0.79N (2.5 nm)/In 0.07Ga 0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm 2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6 h at room temperature.

SU8 inverted-rib waveguide Bragg grating filter.

PubMed

Huang, Cheng-Sheng; Wang, Wei-Chih

2013-08-01

A polymeric SU8 inverted-rib waveguide Bragg grating filter fabricated using reactive ion etching (RIE) and solvent assisted microcontact molding (SAMIM) is presented. SAMIM is one kind of soft lithography. The technique is unique in that a composite hard-polydimethysiloxane/polydimethysiloxane stamp is used to transfer the grating pattern onto an inverted SU8 rib waveguide system. The composite grating stamp can be used repeatedly several times without degradation. Using this stamp and inverter-rib waveguide structure, the Bragg grating filter fabrication can be significantly simplified. The experiment result shows an attenuation dip in the transmission spectra, with a value of -7 dBm at 1550 nm for a grating with a period of 0.492 μm on an inverted-rib waveguide with 6.6 μm width and 4 μm height.

Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry

NASA Astrophysics Data System (ADS)

Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi

1995-08-01

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogart, Katherine Huderle Andersen; Shul, Randy John; Stevens, Jeffrey

2008-10-01

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al{sub x} Ga{sub 1-x} N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greatermore » than 95% of that of a perfectly smooth and vertical facet.« less

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

NASA Astrophysics Data System (ADS)

Fujishima, Tatsuya; Joglekar, Sameer; Piedra, Daniel; Lee, Hyung-Seok; Zhang, Yuhao; Uedono, Akira; Palacios, Tomás

2013-08-01

A BCl3 surface plasma treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors with a GaN cap layer has been established. This BCl3 plasma treatment was performed by an inductively coupled plasma reactive ion etching system under conditions that prevented any recess etching. The average contact resistances without plasma treatment, with SiCl4, and with BCl3 plasma treatment were 0.34, 0.41, and 0.17 Ω mm, respectively. Also, the standard deviation of the ohmic contact resistance with BCl3 plasma treatment was decreased. This decrease in the standard deviation of contact resistance can be explained by analyzing the surface condition of GaN with x-ray photoelectron spectroscopy and positron annihilation spectroscopy. We found that the proposed BCl3 plasma treatment technique can not only remove surface oxide but also introduce surface donor states that contribute to lower the ohmic contact resistance.

Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

NASA Astrophysics Data System (ADS)

Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

2016-09-01

Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices

NASA Astrophysics Data System (ADS)

Zhang, Bingxin; An, Xia; Li, Ming; Hao, Peilin; Zhang, Xing; Huang, Ru

2018-04-01

In this paper, nanoscale germanium (Ge) fin etching with inductively coupled plasma equipment with SF6/CHF3/Ar and Cl2/BCl3/Ar gas mixes are experimentally demonstrated. The impact of the gas ratio on etching induced Ge surface flatness, etch rate and sidewall steepness are comprehensively investigated and compared for these two kinds of etchants and the optimized gas ratio is provided. By using silicon oxide as a hard mask, nanoscale Ge fin with a flat surface and sharp sidewall is experimentally illustrated, which indicates great potential for use in nanoscale Ge-based multi-gate MOSFETs.

Highly roughened polycaprolactone surfaces using oxygen plasma-etching and in vitro mineralization for bone tissue regeneration: fabrication, characterization, and cellular activities.

PubMed

Kim, YongBok; Kim, GeunHyung

2015-01-01

Herein, poly(ɛ-caprolactone) (PCL) surfaces were treated to form various roughness values (R(a)=290-445 nm) and polar functional groups on the surfaces using a plasma-etching process, followed by immersion into simulated body fluid (SBF) for apatite formation. The surface morphology, chemical composition, and mean roughness of the plasma-etched PCL surfaces were measured, and various physical and morphological properties (water contact angles, protein absorption ability, and crystallite size of the apatite layer) of the in vitro mineralized PCL surfaces were evaluated. The roughened PCL surface P-3, which was treated with a sufficient plasma exposure time (4 h), achieved homogeneously distributed apatite formation after soaking in SBF for 7 days, as compared with other surfaces that were untreated or plasma-treated for 30 min or 2 h. Furthermore, to demonstrate their feasibility as a biomimetic surface, pre-osteoblast cells (MC3T3-E1) were cultured on the mineralized PCL surfaces, and cell viability, DAPI-phalloidin fluorescence assay, and alizarin red-staining of the P-3 surface were highly improved compared to the P-1 surface treated with a 30-min plasma exposure time; compared to untreated mineralized PCL surface (N-P), P-3 showed even greater improvements in cell viability and DAPI-phalloidin fluorescence assay. Based on these results, we found that the mineralized PCL surface supplemented with the appropriate plasma treatment can be implicitly helpful to achieve rapid hard tissue regeneration. Copyright © 2014 Elsevier B.V. All rights reserved.

Tantalum Etching with an Atmospheric Pressure Plasma Jet

NASA Astrophysics Data System (ADS)

Teslow, Hilary; Herrmann, Hans; Rosocha, Louis

2002-10-01

The APPJ is a non-thermal, atmospheric-pressure, glow discharge. A feedgas, composed of an inert carrier gas (e.g., He) and small concentrations of additives (e.g., O2, or CF4), flows between closely spaced electrodes powered at 13.56 MHz rf in a coaxial or parallel plate arrangement. The plasma has Te ˜ 2 eV and ne ˜ 10^11 cm-3. Electrons are not in thermal equilibrium with ions and neutrals: the electrons are ``hot", while the overall gas temperature is quite ``cold", typically 50-300 C. In the plasma, the gas is excited, dissociated or ionized by energetic electron impact. As the gas exits the discharge volume, ions and electrons are rapidly lost by recombination, leaving metastables (e.g. O2*, He*) and radicals (e.g. O, F, OF, O2F, CFO). These reactive species are then directed onto a surface to be processed. The APPJ has been developed for decontaminating nuclear, chemical, and biological agents. Atomic fluorine, and possibly other reactive species, can be used to convert actinides (e.g., U and Pu), into volatile fluorides (e.g., UF6, PuF6) that can be trapped, resulting in significant volume reduction of radioactive waste. In this talk, we will present results on using Ta as a surrogate for Pu in He/O2/CF4 etching plasmas. Results of experimental measurements of Ta etch rates for various gas mixtures and plasma jet standoff distance will be compared with plasma chemistry modeling of the concentrations of several active species produced in the plasma.

Ripple formation on Si surfaces during plasma etching in Cl2

NASA Astrophysics Data System (ADS)

Nakazaki, Nobuya; Matsumoto, Haruka; Sonobe, Soma; Hatsuse, Takumi; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2018-05-01

Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate surfaces. The sheath control plate consisted of an array of inclined trenches, being set into place on the rf-biased electrode, where their widths and depths were chosen in such a way that the sheath edge was pushed out of the trenches. The distortion of potential distributions and the consequent deflection of ion trajectories above and in the trenches were then analyzed based on electrostatic particle-in-cell simulations of the plasma sheath, to evaluate the angular distributions of ion fluxes incident on substrates pasted on sidewalls and/or at the bottom of the trenches. Experiments showed well-defined periodic sawtooth-like ripples with their wave vector oriented parallel to the direction of ion incidence at intermediate off-normal angles, while relatively weak corrugations or ripplelike structures with the wave vector perpendicular to it at high off-normal angles. Possible mechanisms for the formation of surface ripples during plasma etching are discussed with the help of Monte Carlo simulations of plasma-surface interactions and feature profile evolution. The results indicate the possibility of providing an alternative to ion beam sputtering for self-organized formation of ordered surface nanostructures.

Characterization and performance of injection molded poly(methylmethacrylate) microchips for capillary electrophoresis

PubMed Central

Nikcevic, Irena; Lee, Se Hwan; Piruska, Aigars; Ahn, Chong H.; Ridgway, Thomas H.; Limbach, Patrick A.; Wehmeyer, K. R.; Heineman, William R.; Seliskar, Carl J.

2009-01-01

Injection molded poly(methylmethacrylate) (IM-PMMA), chips were evaluated as potential candidates for capillary electrophoresis disposable chip applications. Mass production and usage of plastic microchips depends on chip-to-chip reproducibility and on analysis accuracy. Several important properties of IM-PMMA chips were considered: fabrication quality evaluated by environmental scanning electron microscope imaging, surface quality measurements, selected thermal/electrical properties as indicated by measurement of the current versus applied voltage (I–V) characteristic, and the influence of channel surface treatments. Electroosmotic flow was also evaluated for untreated and O2 reactive ion etching (RIE) treated surface microchips. The performance characteristics of single lane plastic microchip capillary electrophoresis (MCE) separations were evaluated using a mixture of two dyes - fluorescein (FL) and fluorescein isothiocyanate (FITC). To overcome non-wettability of the native IM-PMMA surface, a modifier, polyethylene oxide was added to the buffer as a dynamic coating. Chip performance reproducibility was studied for chips with and without surface modification via the process of RIE with O2 and by varying the hole position for the reservoir in the cover plate or on the pattern side of the chip. Additionally, the importance of reconditioning steps to achieve optimal performance reproducibility was also examined. It was found that more reproducible quantitative results were obtained when normalized values of migration time, peak area and peak height of FL and FITC were used instead of actual measured parameters PMID:17477932

Fabrication of a high aspect ratio thick silicon wafer mold and electroplating using flipchip bonding for MEMS applications

NASA Astrophysics Data System (ADS)

Kim, Bong-Hwan; Kim, Jong-Bok

2009-06-01

We have developed a microfabrication process for high aspect ratio thick silicon wafer molds and electroplating using flipchip bonding with THB 151N negative photoresist (JSR micro). This fabrication technique includes large area and high thickness silicon wafer mold electroplating. The process consists of silicon deep reactive ion etching (RIE) of the silicon wafer mold, photoresist bonding between the silicon mold and the substrate, nickel electroplating and a silicon removal process. High thickness silicon wafer molds were made by deep RIE and flipchip bonding. In addition, nickel electroplating was developed. Dry film resist (ORDYL MP112, TOK) and thick negative-tone photoresist (THB 151N, JSR micro) were used as bonding materials. In order to measure the bonding strength, the surface energy was calculated using a blade test. The surface energy of the bonding wafers was found to be 0.36-25.49 J m-2 at 60-180 °C for the dry film resist and 0.4-1.9 J m-2 for THB 151N in the same temperature range. Even though ORDYL MP112 has a better value of surface energy than THB 151N, it has a critical disadvantage when it comes to removing residue after electroplating. The proposed process can be applied to high aspect ratio MEMS structures, such as air gap inductors or vertical MEMS probe tips.

Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5.

PubMed

Ahles, Christopher F; Choi, Jong Youn; Wolf, Steven; Kummel, Andrew C

2017-06-21

The selective etching characteristics of silicon, germanium, and Si 0.5 Ge 0.5 subjected to a downstream H 2 /CF 4 /Ar plasma have been studied using a pair of in situ quartz crystal microbalances (QCMs) and X-ray photoelectron spectroscopy (XPS). At 50 °C and 760 mTorr, Si can be etched in preference to Ge and Si 0.5 Ge 0.5 , with an essentially infinite Si/Ge etch-rate ratio (ERR), whereas for Si/Si 0.5 Ge 0.5 , the ERR is infinite at 22 °C and 760 mTorr. XPS data showed that the selectivity is due to the differential suppression of etching by a ∼2 ML thick C x H y F z layer formed by the H 2 /CF 4 /Ar plasma on Si, Ge, and Si 0.5 Ge 0.5 . The data are consistent with the less exothermic reaction of fluorine radicals with Ge or Si 0.5 Ge 0.5 being strongly suppressed by the C x H y F z layer, whereas, on Si, the C x H y F z layer is not sufficient to completely suppress etching. Replacing H 2 with D 2 in the feed gas resulted in an inverse kinetic isotope effect (IKIE) where the Si and Si 0.5 Ge 0.5 etch rates were increased by ∼30 times with retention of significant etch selectivity. The use of D 2 /CF 4 /Ar instead of H 2 /CF 4 /Ar resulted in less total carbon deposition on Si and Si 0.5 Ge 0.5 and gave less Ge enrichment of Si 0.5 Ge 0.5 . These results are consistent with the selectivity being due to the differential suppression of etching by an angstrom-scale carbon layer.

CoPt/TiN films nanopatterned by RF plasma etching towards dot-patterned magnetic media

NASA Astrophysics Data System (ADS)

Szívós, János; Pothorszky, Szilárd; Soltys, Jan; Serényi, Miklós; An, Hongyu; Gao, Tenghua; Deák, András; Shi, Ji; Sáfrán, György

2018-03-01

CoPt thin films as possible candidates for Bit Patterned magnetic Media (BPM) were prepared and investigated by electron microscopy techniques and magnetic measurements. The structure and morphology of the Direct Current (DC) sputtered films with N incorporation were revealed in both as-prepared and annealed state. Nanopatterning of the samples was carried out by means of Radio Frequency (RF) plasma etching through a Langmuir-Blodgett film of silica nanospheres that is a fast and high throughput technique. As a result, the samples with hexagonally arranged 100 nm size separated dots of fct-phase CoPt were obtained. The influence of the order of nanopatterning and anneling on the nanostructure formation was revealed. The magnetic properties of the nanopatterned fct CoPt films were investigated by Vibrating Sample Magnetometer (VSM) and Magnetic Force Microscopy (MFM). The results show that CoPt thin film nanopatterned by means of the RF plasma etching technique is promising candidate to a possible realization of BPM. Furthermore, this technique is versatile and suitable for scaling up to technological and industrial applications.

Photoresist removal using gaseous sulfur trioxide cleaning technology

NASA Astrophysics Data System (ADS)

Del Puppo, Helene; Bocian, Paul B.; Waleh, Ahmad

1999-06-01

A novel cleaning method for removing photoresists and organic polymers from semiconductor wafers is described. This non-plasma method uses anhydrous sulfur trioxide gas in a two-step process, during which, the substrate is first exposed to SO3 vapor at relatively low temperatures and then is rinsed with de-ionized water. The process is radically different from conventional plasma-ashing methods in that the photoresist is not etched or removed during the exposure to SO3. Rather, the removal of the modified photoresist takes place during the subsequent DI-water rinse step. The SO3 process completely removes photoresist and polymer residues in many post-etch applications. Additional advantages of the process are absence of halogen gases and elimination of the need for other solvents and wet chemicals. The process also enjoys a very low cost of ownership and has minimal environmental impact. The SEM and SIMS surface analysis results are presented to show the effectiveness of gaseous SO3 process after polysilicon, metal an oxide etch applications. The effects of both chlorine- and fluorine-based plasma chemistries on resist removal are described.

Self-Positioned Nanosized Mask for Transparent and Flexible Ferroelectric Polymer Nanodiodes Array.

PubMed

Hyun, Seung; Kwon, Owoong; Choi, Chungryong; Vincent Joseph, Kanniyambatti L; Kim, Yunseok; Kim, Jin Kon

2016-10-12

High density arrays of ferroelectric polymer nanodiodes have gained strong attention for next-generation transparent and flexible nonvolatile resistive memory. Here, we introduce a facile and innovative method to fabricate ferroelectric polymer nanodiode array on an ITO-coated poly(ethylene terephthalate) (PET) substrate by using block copolymer self-assembly and oxygen plasma etching. First, polystyrene-block-poly(2-vinylpyridine) copolymer (PS-b-P2VP) micelles were spin-coated on poly(vinylidene fluoride-ran-trifluoroethylene) copolymer (P(VDF-TrFE)) film/ITO-coated PET substrate. After the sample was immersed in a gold precursor (HAuCl 4 ) containing solution, which strongly coordinates with nitrogen group in P2VP, oxygen plasma etching was performed. During the plasma etching, coordinated gold precursors became gold nanoparticles (GNPs), which successfully acted as self-positioned etching mask to fabricate a high density array of P(VDF-TrFE)) nanoislands with GNP at the top. Each nanoisland shows clearly individual diode property, as confirmed by current-voltage (I-V) curve. Furthermore, due to the transparent and flexible nature of P(VDF-TrFE)) nanoisland as well as the substrate, the P(VDF-TrFE) nanodiode array was highly tranparent, and the diode property was maintained even after a large number of bendings (for instance, 1000 times). The array could be used as the next-generation tranparent and flexible nonvolatile memory device.

Dry etch challenges for CD shrinkage in memory process

NASA Astrophysics Data System (ADS)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

A junction-level optoelectronic characterization of etching-induced damage for third-generation HgCdTe infrared focal-plane array photodetectors

NASA Astrophysics Data System (ADS)

Wang, Peng; Wang, Yueming; Wu, Mingzai; Ye, Zhenhua

2018-06-01

Third-generation HgCdTe-based infrared focal plane arrays require high aspect ratio trenches with admissible etch induced damage at the surface and sidewalls for effectively isolating the pixels. In this paper, the high-density inductively coupled plasma enhanced reaction ion etching technique has been used for micro-mesa delineation of HgCdTe for third-generation infrared focal-plane array detectors. A nondestructive junction-level optoelectronic characterization method called laser beam induced current (LBIC) is used to evaluate the lateral junction extent of HgCdTe etch-induced damage scanning electron microscopy. It is found that the LBIC profiles exhibit evident double peaks and valleys phenomena. The lateral extent of etch induced mesa damage of ∼2.4 μm is obtained by comparing the LBIC profile and the scanning electron microscopy image of etched sample. This finding will guide us to nondestructively identify the distributions of the etching damages in large scale HgCdTe micro-mesa.

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik, E-mail: dmetzler@umd.edu; Uppireddi, Kishore; Bruce, Robert L.

2016-01-15

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5 nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this work, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE PAGES

Metzler, Dominik; Uppiredi, Kishore; Bruce, Robert L.; ...

2015-11-13

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this study, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

NASA Astrophysics Data System (ADS)

Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

2017-10-01

Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

NASA Technical Reports Server (NTRS)

Sharma, S. P.; Rao, M. V. V. S.; Meyyappan, Meyya

2000-01-01

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Uniquely identifiable tamper-evident device using coupling between subwavelength gratings

NASA Astrophysics Data System (ADS)

Fievre, Ange Marie Patricia

Reliability and sensitive information protection are critical aspects of integrated circuits. A novel technique using near-field evanescent wave coupling from two subwavelength gratings (SWGs), with the input laser source delivered through an optical fiber is presented for tamper evidence of electronic components. The first grating of the pair of coupled subwavelength gratings (CSWGs) was milled directly on the output facet of the silica fiber using focused ion beam (FIB) etching. The second grating was patterned using e-beam lithography and etched into a glass substrate using reactive ion etching (RIE). The slightest intrusion attempt would separate the CSWGs and eliminate near-field coupling between the gratings. Tampering, therefore, would become evident. Computer simulations guided the design for optimal operation of the security solution. The physical dimensions of the SWGs, i.e. period and thickness, were optimized, for a 650 nm illuminating wavelength. The optimal dimensions resulted in a 560 nm grating period for the first grating etched in the silica optical fiber and 420 nm for the second grating etched in borosilicate glass. The incident light beam had a half-width at half-maximum (HWHM) of at least 7 microm to allow discernible higher transmission orders, and a HWHM of 28 microm for minimum noise. The minimum number of individual grating lines present on the optical fiber facet was identified as 15 lines. Grating rotation due to the cylindrical geometry of the fiber resulted in a rotation of the far-field pattern, corresponding to the rotation angle of moire fringes. With the goal of later adding authentication to tamper evidence, the concept of CSWGs signature was also modeled by introducing random and planned variations in the glass grating. The fiber was placed on a stage supported by a nanomanipulator, which permitted three-dimensional displacement while maintaining the fiber tip normal to the surface of the glass substrate. A 650 nm diode laser was fixed to a translation mount that transmitted the light source through the optical fiber, and the output intensity was measured using a silicon photodiode. The evanescent wave coupling output results for the CSWGs were measured and compared to the simulation results.

Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl{sup +} and Br{sup +} ion incidence in the presence of Cl and Br neutrals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakazaki, Nobuya, E-mail: nakazaki.nobuya.58x@st.kyoto-u.ac.jp; Takao, Yoshinori; Eriguchi, Koji

Classical molecular dynamics (MD) simulations have been performed for Cl{sup +} and Br{sup +} ions incident on Si(100) surfaces with Cl and Br neutrals, respectively, to gain a better understanding of the ion-enhanced surface reaction kinetics during Si etching in Cl- and Br-based plasmas. The ions were incident normally on surfaces with translational energies in the range E{sub i} = 20–500 eV, and low-energy neutrals of E{sub n} = 0.01 eV were also incident normally thereon with the neutral-to-ion flux ratio in the range Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 0–100, where an improved Stillinger--Weber potential form was employed for the interatomic potential concerned. The etch yieldsmore » and thresholds presently simulated were in agreement with the experimental results previously reported for Si etching in Cl{sub 2} and Br{sub 2} plasmas as well as in Cl{sup +}, Cl{sub 2}{sup +}, and Br{sup +} beams, and the product stoichiometry simulated was consistent with that observed during Ar{sup +} beam incidence on Si in Cl{sub 2}. Moreover, the surface coverage of halogen atoms, halogenated layer thickness, surface stoichiometry, and depth profile of surface products simulated for Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 100 were in excellent agreement with the observations depending on E{sub i} reported for Si etching in Cl{sub 2} plasmas. The MD also indicated that the yield, coverage, and surface layer thickness are smaller in Si/Br than in Si/Cl system, while the percentage of higher halogenated species in product and surface stoichiometries is larger in Si/Br. The MD further indicated that in both systems, the translational energy distributions of products and halogen adsorbates desorbed from surfaces are approximated by two Maxwellians of temperature T{sub 1} ≈ 2500 K and T{sub 2} ≈ 7000–40 000 K. These energy distributions are discussed in terms of the desorption or evaporation from hot spots formed through chemically enhanced physical sputtering and physically enhanced chemical sputtering, which have so far been speculated to both occur in the ion-enhanced surface reaction kinetics of plasma etching.« less

Unbiased roughness measurements: the key to better etch performance

NASA Astrophysics Data System (ADS)

Liang, Andrew; Mack, Chris; Sirard, Stephen; Liang, Chen-wei; Yang, Liu; Jiang, Justin; Shamma, Nader; Wise, Rich; Yu, Jengyi; Hymes, Diane

2018-03-01

Edge placement error (EPE) has become an increasingly critical metric to enable Moore's Law scaling. Stochastic variations, as characterized for lines by line width roughness (LWR) and line edge roughness (LER), are dominant factors in EPE and known to increase with the introduction of EUV lithography. However, despite recommendations from ITRS, NIST, and SEMI standards, the industry has not agreed upon a methodology to quantify these properties. Thus, differing methodologies applied to the same image often result in different roughness measurements and conclusions. To standardize LWR and LER measurements, Fractilia has developed an unbiased measurement that uses a raw unfiltered line scan to subtract out image noise and distortions. By using Fractilia's inverse linescan model (FILM) to guide development, we will highlight the key influences of roughness metrology on plasma-based resist smoothing processes. Test wafers were deposited to represent a 5 nm node EUV logic stack. The patterning stack consists of a core Si target layer with spin-on carbon (SOC) as the hardmask and spin-on glass (SOG) as the cap. Next, these wafers were exposed through an ASML NXE 3350B EUV scanner with an advanced chemically amplified resist (CAR). Afterwards, these wafers were etched through a variety of plasma-based resist smoothing techniques using a Lam Kiyo conductor etch system. Dense line and space patterns on the etched samples were imaged through advanced Hitachi CDSEMs and the LER and LWR were measured through both Fractilia and an industry standard roughness measurement software. By employing Fractilia to guide plasma-based etch development, we demonstrate that Fractilia produces accurate roughness measurements on resist in contrast to an industry standard measurement software. These results highlight the importance of subtracting out SEM image noise to obtain quicker developmental cycle times and lower target layer roughness.

Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

NASA Astrophysics Data System (ADS)

Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

2018-04-01

An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

The fabrication of diversiform nanostructure forests based on residue nanomasks synthesized by oxygen plasma removal of photoresist

NASA Astrophysics Data System (ADS)

Mao, Haiyang; Wu, Di; Wu, Wengang; Xu, Jun; Hao, Yilong

2009-11-01

A simple lithography-free approach for fabricating diversiform nanostructure forests is presented. The key technique of the approach is that randomly distributed nanoscale residues can be synthesized on substrates simply by removing photoresist with oxygen plasma bombardment. These nanoresidues can function as masks in the subsequent etching process for nanopillars. By further spacer and then deep etching processes, a variety of forests composed of regular, tulip-like or hollow-head nanopillars as well as nanoneedles are successfully achieved in different etching conditions. The pillars have diameters of 30-200 nm and heights of 400 nm-3 µm. The needles reach several microns in height, with their tips less than 10 nm in diameter. Moreover, microstructures containing these nanostructure forests, such as surface microchannels, have also been fabricated. This approach is compatible with conventional micro/nano-electromechanical system (MEMS/NEMS) fabrication.

High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

NASA Astrophysics Data System (ADS)

Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

2007-05-01

The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W /L=10μm/50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2/Vs, a subthreshold gate swing value of 0.59V/decade, a thrseshold voltage of 5.9V, and an Ion/off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

Fabrication of lithographically defined optical coupling facets for silicon-on-insulator waveguides by inductively coupled plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yap, K.P.; Lamontagne, B.; Delage, A.

2006-05-15

We present a technique to lithographically define and fabricate all required optical facets on a silicon-on-insulator photonic integrated circuit by an inductively coupled plasma etch process. This technique offers 1 {mu}m positioning accuracy of the facets at any location within the chip and eliminates the need of polishing. Facet fabrication consists of two separate steps to ensure sidewall verticality and minimize attack on the end surfaces of the waveguides. Protection of the waveguides by a thermally evaporated aluminum layer before the 40-70 {mu}m deep optical facet etching has been proven essential in assuring the facet smoothness and integrity. Both scanningmore » electron microscopy analysis and optical measurement results show that the quality of the facets prepared by this technique is comparable to the conventional facets prepared by polishing.« less

Pattern transfer with stabilized nanoparticle etch masks

NASA Astrophysics Data System (ADS)

Hogg, Charles R.; Picard, Yoosuf N.; Narasimhan, Amrit; Bain, James A.; Majetich, Sara A.

2013-03-01

Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiOx substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results.

Gray scale x-ray mask

DOEpatents

Morales, Alfredo M [Livermore, CA; Gonzales, Marcela [Seattle, WA

2006-03-07

The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Hui; Endo, Katsuyoshi; Yamamura, Kazuya, E-mail: yamamura@upst.eng.osaka-u.ac.jp

2015-08-03

Chemical mechanical polishing (CMP) combined with atmospheric-pressure plasma pretreatment was applied to a GaN (0001) substrate. The irradiation of a CF{sub 4}-containing plasma was proven to be very useful for modifying the surface of GaN. When CMP was conducted on a plasma-irradiated surface, a modified layer of GaF{sub 3} acted as a protective layer on GaN by preventing the formation of etch pits. Within a short duration (8 min) of CMP using a commercially available CeO{sub 2} slurry, an atomically flat surface with a root mean square (rms) roughness of 0.11 nm was obtained. Moreover, etch pits, which are inevitably introduced inmore » conventional CMP, could not be observed at the dislocation sites on the polished GaN surface. It was revealed that CMP combined with the plasma pretreatment was very effective for obtaining a pit-free and atomically flat GaN surface.« less

Exploration of suitable dry etch technologies for directed self-assembly

NASA Astrophysics Data System (ADS)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

The line roughness improvement with plasma coating and cure treatment for 193nm lithography and beyond

NASA Astrophysics Data System (ADS)

Zheng, Erhu; Huang, Yi; Zhang, Haiyang

2017-03-01

As CMOS technology reaches 14nm node and beyond, one of the key challenges of the extension of 193nm immersion lithography is how to control the line edge and width roughness (LER/LWR). For Self-aligned Multiple Patterning (SaMP), LER becomes larger while LWR becomes smaller as the process proceeds[1]. It means plasma etch process becomes more and more dominant for LER reduction. In this work, we mainly focus on the core etch solution including an extra plasma coating process introduced before the bottom anti reflective coating (BARC) open step, and an extra plasma cure process applied right after BARC-open step. Firstly, we leveraged the optimal design experiment (ODE) to investigate the impact of plasma coating step on LER and identified the optimal condition. ODE is an appropriate method for the screening experiments of non-linear parameters in dynamic process models, especially for high-cost-intensive industry [2]. Finally, we obtained the proper plasma coating treatment condition that has been proven to achieve 32% LER improvement compared with standard process. Furthermore, the plasma cure scheme has been also optimized with ODE method to cover the LWR degradation induced by plasma coating treatment.

Predictions of ion energy distributions and radical fluxes in radio frequency biased inductively coupled plasma etching reactors

NASA Astrophysics Data System (ADS)

Hoekstra, Robert J.; Kushner, Mark J.

1996-03-01

Inductively coupled plasma (ICP) reactors are being developed for low gas pressure (<10s mTorr) and high plasma density ([e]≳1011 cm-3) microelectronics fabrication. In these reactors, the plasma is generated by the inductively coupled electric field while an additional radio frequency (rf) bias is applied to the substrate. One of the goals of these systems is to independently control the magnitude of the ion flux by the inductively coupled power deposition, and the acceleration of ions into the substrate by the rf bias. In high plasma density reactors the width of the sheath above the wafer may be sufficiently thin that ions are able to traverse it in approximately 1 rf cycle, even at 13.56 MHz. As a consequence, the ion energy distribution (IED) may have a shape typically associated with lower frequency operation in conventional reactive ion etching tools. In this paper, we present results from a computer model for the IED incident on the wafer in ICP etching reactors. We find that in the parameter space of interest, the shape of the IED depends both on the amplitude of the rf bias and on the ICP power. The former quantity determines the average energy of the IED. The latter quantity controls the width of the sheath, the transit time of ions across the sheath and hence the width of the IED. In general, high ICP powers (thinner sheaths) produce wider IEDs.

Single-crystal silicon trench etching for fabrication of highly integrated circuits

NASA Astrophysics Data System (ADS)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Molecular dynamics analysis of silicon chloride ion incidence during Si etching in Cl-based plasmas: Effects of ion incident energy, angle, and neutral radical-to-ion flux ratio

NASA Astrophysics Data System (ADS)

Nakazaki, Nobuya; Eriguchi, Koji; Ono, Kouichi

2014-10-01

Profile anomalies and surface roughness are critical issues to be resolved in plasma etching of nanometer-scale microelectronic devices, which in turn requires a better understanding of the effects of ion incident energy and angle on surface reaction kinetics. This paper presents a classical molecular dynamics (MD) simulation of Si(100) etching by energetic Clx+ (x = 1-2) and SiClx+ (x = 0-4) ion beams with different incident energies Ei = 20-500 eV and angles θi = 0-85°, with and without low-energy neutral Cl radicals (neutral-to-ion flux ratios Γn/Γi = 0 and 100). An improved Stillinger-Weber interatomic potential was used for the Si/Cl system. Numerical results indicated that in Cl+, Cl2+, SiCl3+, and SiCl4+ incidences for θi = 0° and Γn/Γi = 0, the etching occurs in the whole Ei range investigated; on the other hand, in SiCl+ and SiCl2+ incidences, the deposition occurs at low Ei < 300 and 150 eV, respectively, while the etching occurs at further increased Ei. For SiCl+ and SiCl2+, the transition energies from deposition and etching become lowered for Γn/Γi = 100. Numerical results further indicated that in the SiCl+ incidence for Γn/Γi = 0, the etching occurs in the whole θi range investigated for Ei >= 300 eV; on the other hand, for Ei = 100 and 150 eV, the deposition occurs at low θi < 60° and 40°, respectively, while the etching occurs at further increased θi; in addition, for Ei <= 50 eV, the deposition occurs in the whole θi range investigated.

Advanced Simulation Technology to Design Etching Process on CMOS Devices

NASA Astrophysics Data System (ADS)

Kuboi, Nobuyuki

2015-09-01

Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

Submillimeter Spectroscopic Diagnostics in Semiconductor Processing Plasmas

NASA Astrophysics Data System (ADS)

Helal, Yaser H.; Neese, Christopher F.; De Lucia, Frank C.; Ewing, Paul R.; Stout, Phillip J.; Walker, Quentin; Armacost, Michael D.

2014-06-01

Submillimeter absorption spectroscopy was used to study semiconductor processing plasmas. Abundances and temperatures of molecules, radicals, and ions can be determined without altering any of the properties of the plasma. The behavior of these measurements provides useful applications in monitoring process steps. A summary of such applications will be presented, including etching and cleaning endpoint detection.

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

NASA Technical Reports Server (NTRS)

Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

2009-01-01

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Plasma Jet Interactions with Liquids in Partial Fulfillment of an NRL Karles Fellowship

DTIC Science & Technology

2015-11-30

deposition), modify (e.g., chemical functionalization), and etch (in Si technology) materials. In low- pressure non- equilibrium discharge plasmas... equilibrium discharge plasmas, associated with the above processes, the electron population is much more energetic than both the ions and neutral gas...to be crucial to the advancements of these fields1, 2. Background: Atmospheric-pressure, non- equilibrium (APNE) plasmas, like low-pressure plasmas

Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer

NASA Astrophysics Data System (ADS)

Oh, JiSoo; Oh, Jong Sik; Sung, DaIn; Yim, SoonMin; Song, SeungWon; Yeom, GeunYoung

2017-03-01

Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3 0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of 10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9˚) could be fabricated.

Predicting synergy in atomic layer etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanarik, Keren J.; Tan, Samantha; Yang, Wenbing

2017-03-27

Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO 2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms ofmore » energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.« less

Amorphous indium-gallium-zinc-oxide thin-film transistors using organic-inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

NASA Astrophysics Data System (ADS)

Hsu, Chao-Jui; Chang, Ching-Hsiang; Chang, Kuei-Ming; Wu, Chung-Chih

2017-01-01

We investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (V th), subthreshold swing (SS), and on/off ratio (I on/off) of 7.5 cm2 V-1 s-1, 2.38 V, 0.38 V/decade, and 2.2 × 108, respectively, manifesting their usefulness for a-IGZO TFTs.

Low resistivity of graphene nanoribbons with zigzag-dominated edge fabricated by hydrogen plasma etching combined with Zn/HCl pretreatment

NASA Astrophysics Data System (ADS)

Liu, Fengkui; Li, Qi; Wang, Rubing; Xu, Jianbao; Hu, Junxiong; Li, Weiwei; Guo, Yufen; Qian, Yuting; Deng, Wei; Ullah, Zaka; Zeng, Zhongming; Sun, Mengtao; Liu, Liwei

2017-11-01

Graphene nanoribbons (GNRs) have attracted intensive research interest owing to their potential applications in high performance graphene-based electronics. However, the deterioration of electrical performance caused by edge disorder is still an important obstacle to the applications. Here, we report the fabrication of low resistivity GNRs with a zigzag-dominated edge through hydrogen plasma etching combined with the Zn/HCl pretreatment method. This method is based on the anisotropic etching properties of hydrogen plasma in the vicinity of defects created by sputtering zinc (Zn) onto planar graphene. The polarized Raman spectra measurement of GNRs exhibits highly polarization dependence, which reveals the appearance of the zigzag-dominated edge. The as-prepared GNRs exhibit high carrier mobility (˜1332.4 cm2 v-1 s-1) and low resistivity (˜0.7 kΩ) at room temperature. Particularly, the GNRs can carry large current density (5.02 × 108 A cm-2) at high voltage (20.0 V) in the air atmosphere. Our study develops a controllable method to fabricate zigzag edge dominated GNRs for promising applications in transistors, sensors, nanoelectronics, and interconnects.

Localized Plasma Processing of Materials Using Atmospheric-Pressure Microplasma Jets

NASA Astrophysics Data System (ADS)

Yoshiki, Hiroyuki; Ikeda, Koichi; Wakaki, Akihiro; Togashi, Seisuke; Taniguchi, Kazutake; Horiike, Yasuhiro

2003-06-01

An atmospheric-pressure microplasma jet (μ-PJ) using RF (13.56 MHz) corona discharge was generated at the tip of a stainless steel surgical needle of 0.4 mm outer diameter at a RF power of 6-14 W. The needle functions as both a powered electrode and a narrow nozzle. The μ-PJ with a gas mixture of He/SF6/O2 was applied to localized Si etching. The etched profile exhibited an isotropic shape and the etch rate had a maximum value at the total gas flow rate of about 600 sccm and the SF6 concentration of 5%. The etch rate of 170 μm/min was obtained at a RF power of 14 W.

Tailored Voltage Waveforms in an SF6 /O2 discharge: slope asymmetry and its effect on surface nanotexturing of silicon

NASA Astrophysics Data System (ADS)

Fischer, G.; Drahi, E.; Poulain, G.; Bruneau, B.; Johnson, E. V.

2016-09-01

The nanotexturing of the surface of a crystalline silicon (c-Si) wafer for improved photovoltaic performance can be achieved through the use of a SF6 /O2 capacitively coupled reactive ion etching plasma. In this study, we attempt to modify the texturing conditions by taking advantage of slope asymmetries of Tailored Voltage Waveform (TVW) excitation. We show that TVW shapes resembling ``sawtooths'', presenting a large slope asymmetry, induce high ionization asymmetries in the discharge, and that the dominance of this effect strongly depends on both gas mixture and pressure. These asymmetries have been previously observed in other electronegative gas and are due to differing plasma sheath dynamics at powered and grounded electrode in a discharge operating in drift-ambipolar mode. The texturing of c-Si in SF6 /O2 occurs through competing mechanisms, including etching by fluorine radicals and in-situ deposition of micro-masking species. The relative fluxes of etching and passivating species are expected to be strongly varied due to the plasma asymmetry. Morphological and optical characterization of textured c-Si surfaces will give more insight into both the plasma properties and the mechanisms involved in dry nanotexturing. This project has been supported by the French Government in the frame of the program of investment for the future (Programme d'Investissement d'Avenir - ANR-IEED-002-01).

Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

NASA Astrophysics Data System (ADS)

Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

2014-11-01

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

Highly controllable ICP etching of GaAs based materials for grating fabrication

NASA Astrophysics Data System (ADS)

Weibin, Qiu; Jiaxian, Wang

2012-02-01

Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 D 10 W, RF2 D 20 W and a high ratio of Ar to SiCl4 flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.

Mask fabrication process

DOEpatents

Cardinale, Gregory F.

2000-01-01

A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

Exploring the wake of a dust particle by a continuously approaching test grain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Hendrik, E-mail: hjung@physik.uni-kiel.de; Greiner, Franko; Asnaz, Oguz Han

2015-05-15

The structure of the ion wake behind a dust particle in the plasma sheath of an rf discharge is studied in a two-particle system. The wake formation leads to attractive forces between the negatively charged dust and can cause a reduction of the charge of a particle. By evaluating the dynamic response of the particle system to small external perturbations, these quantities can be measured. Plasma inherent etching processes are used to achieve a continuous mass loss and hence an increasing levitation height of the lower particle, so that the structure of the wake of the upper particle, which ismore » nearly unaffected by etching, can be probed. The results show a significant modification of the wake structure in the plasma sheath to one long potential tail.« less

Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography

NASA Astrophysics Data System (ADS)

Guo, Xu; Ni, Mengyang; Zhuang, Zhe; Dai, Jiangping; Wu, Feixiang; Cui, Yushuang; Yuan, Changsheng; Ge, Haixiong; Chen, Yanfeng

2016-04-01

A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal-organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

Stages of polymer transformation during remote plasma oxidation (RPO) at atmospheric pressure

NASA Astrophysics Data System (ADS)

Luan, P.; Oehrlein, G. S.

2018-04-01

The interaction of cold temperature plasma sources with materials can be separated into two types: ‘direct’ and ‘remote’ treatments. Compared to the ‘direct’ treatment which involves energetic charged species along with short-lived, strongly oxidative neutral species, ‘remote’ treatment by the long-lived weakly oxidative species is less invasive and better for producing uniformly treated surfaces. In this paper, we examine the prototypical case of remote plasma oxidation (RPO) of polymer materials by employing a surface micro-discharge (in a N2/O2 mixture environment) treatment on polystyrene. Using material characterization techniques including real-time ellipsometry, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, the time evolution of polymer film thickness, refractive index, surface, and bulk chemical composition were evaluated. These measurements revealed three consecutive stages of polymer transformation, i.e. surface adsorption and oxidation, bulk film permeation and thickness expansion followed by the material removal as a result of RPO. By correlating the observed film thickness changes with simultaneously obtained chemical information, we found that the three stages were due to the three effects of weakly oxidative species on polymers: (1) surface oxidation and nitrate (R-ONO2) chemisorption, (2) bulk oxidation, and (3) etching. Our results demonstrate that surface adsorption and oxidation, bulk oxidation, and etching can all happen during one continuous plasma treatment. We show that surface nitrate is only adsorbed on the top few nanometers of the polymer surface. The polymer film expansion also provided evidence for the diffusion and reaction of long-lived plasma species in the polymer bulk. Besides, we found that the remote plasma etched surface was relatively rich in O-C=O (ester or carboxylic acid). These findings clarify the roles of long-lived weakly oxidative plasma species on polymers and advance the understanding of plasma-polymer interactions on a molecular scale.

Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

PubMed

Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

2018-03-14

We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

Applications of MICP source for next-generation photomask process

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Joo; Chang, Byung-Soo; Choi, Boo-Yeon; Park, Kyung H.; Jeong, Soo-Hong

2000-07-01

As critical dimensions of photomask extends into submicron range, critical dimension uniformity, edge roughness, macro loading effect, and pattern slope become tighter than before. Fabrication of photomask relies on the ability to pattern features with anisotropic profile. To improve critical dimension uniformity, dry etcher is one of the solution and inductively coupled plasma (ICP) sources have become one of promising high density plasma sources for dry etcher. In this paper, we have utilized dry etcher system with multi-pole ICP source for Cr etch and MoSi etch and have investigated critical dimension uniformity, slope, and defects. We will present dry etch process data by process optimization of newly designed dry etcher system. The designed pattern area is 132 by 132 mm2 with 23 by 23 matrix test patterns. 3 (sigma) of critical dimension uniformity is below 12 nm at 0.8 - 3.0 micrometers . In most cases, we can obtain zero defect masks which is operated by face- down loading.

Frequency-tuning radiofrequency plasma source operated in inductively-coupled mode under a low magnetic field

NASA Astrophysics Data System (ADS)

Takahashi, Kazunori; Nakano, Yudai; Ando, Akira

2017-07-01

A radiofrequency (rf) inductively-coupled plasma source is operated with a frequency-tuning impedance matching system, where the rf frequency is variable in the range of 20-50 MHz and the maximum power is 100 W. The source consists of a 45 mm-diameter pyrex glass tube wound by an rf antenna and a solenoid providing a magnetic field strength in the range of 0-200 Gauss. A reflected rf power for no plasma case is minimized at the frequency of ˜25 MHz, whereas the frequency giving the minimum reflection with the high density plasma is about 28 MHz, where the density jump is observed when minimizing the reflection. A high density argon plasma above 1× {{10}12} cm-3 is successfully obtained in the source for the rf power of 50-100 W, where it is observed that an external magnetic field of a few tens of Gauss yields the highest plasma density in the present configuration. The frequency-tuning plasma source is applied to a compact and high-speed silicon etcher in an Ar-SF6 plasma; then the etching rate of 8~μ m min-1 is obtained for no bias voltage to the silicon wafer, i.e. for the case that a physical ion etching process is eliminated.

Real-time plasma control in a dual-frequency, confined plasma etcher

NASA Astrophysics Data System (ADS)

Milosavljević, V.; Ellingboe, A. R.; Gaman, C.; Ringwood, J. V.

2008-04-01

The physics issues of developing model-based control of plasma etching are presented. A novel methodology for incorporating real-time model-based control of plasma processing systems is developed. The methodology is developed for control of two dependent variables (ion flux and chemical densities) by two independent controls (27 MHz power and O2 flow). A phenomenological physics model of the nonlinear coupling between the independent controls and the dependent variables of the plasma is presented. By using a design of experiment, the functional dependencies of the response surface are determined. In conjunction with the physical model, the dependencies are used to deconvolve the sensor signals onto the control inputs, allowing compensation of the interaction between control paths. The compensated sensor signals and compensated set-points are then used as inputs to proportional-integral-derivative controllers to adjust radio frequency power and oxygen flow to yield the desired ion flux and chemical density. To illustrate the methodology, model-based real-time control is realized in a commercial semiconductor dielectric etch chamber. The two radio frequency symmetric diode operates with typical commercial fluorocarbon feed-gas mixtures (Ar/O2/C4F8). Key parameters for dielectric etching are known to include ion flux to the surface and surface flux of oxygen containing species. Control is demonstrated using diagnostics of electrode-surface ion current, and chemical densities of O, O2, and CO measured by optical emission spectrometry and/or mass spectrometry. Using our model-based real-time control, the set-point tracking accuracy to changes in chemical species density and ion flux is enhanced.

Feasibility of Plasma Treated Clay in Clay/Polymer Nanocomposites Powders for use Laser Sintering (LS)

NASA Astrophysics Data System (ADS)

Almansoori, Alaa; Seabright, Ryan; Majewski, C.; Rodenburg, C.

2017-05-01

The addition of small quantities of nano-clay to nylon is known to improve mechanical properties of the resulting nano-composite. However, achieving a uniform dispersion and distribution of the clay within the base polymer can prove difficult. A demonstration of the fabrication and characterization of plasma-treated organoclay/Nylon12 nanocomposite was carried out with the aim of achieving better dispersion of clay platelets on the Nylon12 particle surface. Air-plasma etching was used to enhance the compatibility between clays and polymers to ensure a uniform clay dispersion in composite powders. Downward heat sintering (DHS) in a hot press is used to process neat and composite powders into tensile and XRD specimens. Morphological studies using Low Voltage Scanning Electron Microscopy (LV-SEM) were undertaken to characterize the fracture surfaces and clay dispersion in powders and final composite specimens. Thermogravimetric analysis (TGA) testing performed that the etched clay (EC) is more stable than the nonetched clay (NEC), even at higher temperatures. The influence of the clay ratio and the clay plasma treatment process on the mechanical properties of the nanocomposites was studied by tensile testing. The composite fabricated from (3% EC/N12) powder showed ~19 % improvement in elastic modulus while the composite made from (3% NEC/N12) powder was improved by only 14%). Most notably however is that the variation between tests is strongly reduced when etch clay is used in the composite. We attribute this to a more uniform distribution and better dispersion of the plasma treated clay within polymer powders and ultimately the composite.

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

NASA Astrophysics Data System (ADS)

Kuyama, Tomohiro; Eriguchi, Koji

2018-06-01

We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman’s effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer — an oxidized layer — extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current–voltage (I–V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer.

Molecular dynamic simulation study of plasma etching L10 FePt media in embedded mask patterning (EMP) process

NASA Astrophysics Data System (ADS)

Zhu, Jianxin; Quarterman, P.; Wang, Jian-Ping

2017-05-01

Plasma etching process of single-crystal L10-FePt media [H. Wang et al., Appl. Phys. Lett. 102(5) (2013)] is studied using molecular dynamic simulation. Embedded-Atom Method [M. S. Daw and M. I. Baskes, Phy. Rev. B 29, 6443 (1984); X. W. Zhou, R. A. Johnson and H. N. G. Wadley, Phy. Rev. B 69, 144113 (2004)] is used to calculate the interatomic potential within atoms in FePt alloy, and ZBL potential [J.F. Ziegler, J. P. Biersack and U. Littmark, "The Stopping and Range of Ions in Matter," Volume 1, Pergamon,1985] in comparison with conventional Lennard-Jones "12-6" potential is applied to interactions between etching gas ions and metal atoms. It is shown the post-etch structure defects can include amorphized surface layer and lattice interstitial point defects that caused by etchant ions passed through the surface layer. We show that the amorphized or damaged FePt lattice surface layer (or "magnetic dead-layer") thickness after etching increases with ion energy for Ar ion impacts, but significantly small for He ions at up to 250eV ion energy. However, we showed that He sputtering creates more interstitial defects at lower energy levels and defects are deeper below the surface compared to Ar sputtering. We also calculate the interstitial defect level and depth as dependence on ion energy for both Ar and He ions. Media magnetic property loss due to these defects is also discussed.

Influence of Ar/O2/H2O Feed Gas and N2/O2/H2O Environment on the Interaction of Time Modulated MHz Atmospheric Pressure Plasma Jet (APPJ) with Model Polymers

NASA Astrophysics Data System (ADS)

Oehrlein, Gottlieb; Luan, Pingshan; Knoll, Andrew; Kondeti, Santosh; Bruggeman, Peter

2016-09-01

An Ar/O2/H2O fed time modulated MHz atmospheric pressure plasma jet (APPJ) in a sealed chamber was used to study plasma interaction with model polymers (polystyrene, poly-methyl methacrylate, etc.). The amount of H2O in the feed gas and/or present in the N2, O2, or N2/O2 environment was controlled. Short lived species such as O atoms and OH radicals play a crucial role in polymer etching and surface modifications (obtained from X-ray photoelectron spectroscopy of treated polymers without additional atmospheric exposure). Polymer etching depth for Ar/air fed APPJ mirrors the decay of gas phase O atoms with distance from the APPJ nozzle in air and is consistent with the estimated O atom flux at the polymer surface. Furthermore, whereas separate O2 or H2O admixture to Ar enhances polymer etching, simultaneous addition of O2 and H2O to Ar quenches polymer etching. This can be explained by the mutual quenching of O with OH, H and HO2 in the gas phase. Results where O2 and/or H2O in the environment were varied are consistent with these mechanisms. All results will be compared with measured and simulated species densities reported in the literature. We gratefully acknowledge funding from US Department of Energy (DE-SC0001939) and National Science Foundation (PHY-1415353).

Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

NASA Technical Reports Server (NTRS)

Hossain, T.; Khan, F.; Adesida, I.; Bohn, P.; Rittenhouse, T.; Lienhard, Michael (Technical Monitor)

2003-01-01

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.

An extended CFD model to predict the pumping curve in low pressure plasma etch chamber

NASA Astrophysics Data System (ADS)

Zhou, Ning; Wu, Yuanhao; Han, Wenbin; Pan, Shaowu

2014-12-01

Continuum based CFD model is extended with slip wall approximation and rarefaction effect on viscosity, in an attempt to predict the pumping flow characteristics in low pressure plasma etch chambers. The flow regime inside the chamber ranges from slip wall (Kn ˜ 0.01), and up to free molecular (Kn = 10). Momentum accommodation coefficient and parameters for Kn-modified viscosity are first calibrated against one set of measured pumping curve. Then the validity of this calibrated CFD models are demonstrated in comparison with additional pumping curves measured in chambers of different geometry configurations. More detailed comparison against DSMC model for flow conductance over slits with contraction and expansion sections is also discussed.

Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

NASA Astrophysics Data System (ADS)

Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

2016-05-01

We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

The effect of axial ion parameters on the properties of glow discharge polymer in T2B/H2 plasma

NASA Astrophysics Data System (ADS)

Ai, Xing; He, Xiao-Shan; Huang, Jing-Lin; He, Zhi-Bing; Du, Kai; Chen, Guo

2018-03-01

Glow discharge polymer (GDP) films were fabricated using plasma-enhanced chemical vapor deposition. The main purpose of this work was to explore the correlations of plasma parameters with the surface morphology and chemical structure of GDP films. The intensities of main positive ions and ion energy as functions of axial distances in T2B/H2 plasma were diagnosed using energy-resolved mass spectrometry. The surface morphology and chemical structure were characterized as functions of axial distances using a scanning electron microscope and Fourier transform infrared spectroscopy, respectively. As the axial distance increases, both the intensities of positive ions and high energy ions decreases, and dissociation weakens while polymerization enhances. This leads to the weakening of the cross-linking structure of GDP films and the formation of dome defects on films. Additionally, high energy ions could introduce a strong etching effect to form etching pits. Therefore, an axial distance of about 20 mm was found to be the optimal plasma parameter to prepare the defect-free GDP films. These results could help one to find the optimal plasma parameters for GDP film deposition.

Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

NASA Astrophysics Data System (ADS)

Min, Jae-Ho; Lee, Gyeo-Re; Lee, Jin-Kwan; Moon, Sang Heup; Kim, Chang-Koo

2004-05-01

The dependences of etch rates on the angle of ions incident on the substrate surface in four plasma/substrate systems that constitute the advanced Bosch process were investigated using a Faraday cage designed for the accurate control of the ion-incident angle. The four systems, established by combining discharge gases and substrates, were a SF6/poly-Si, a SF6/fluorocarbon polymer, an O2/fluorocarbon polymer, and a C4F8/Si. In the case of SF6/poly-Si, the normalized etch rates (NERs), defined as the etch rates normalized by the rate on the horizontal surface, were higher at all angles than values predicted from the cosine of the ion-incident angle. This characteristic curve shape was independent of changes in process variables including the source power and bias voltage. Contrary to the earlier case, the NERs for the O2/polymer decreased and eventually reached much lower values than the cosine values at angles between 30° and 70° when the source power was increased and the bias voltage was decreased. On the other hand, the NERs for the SF6/polymer showed a weak dependence on the process variables. In the case of C4F8/Si, which is used in the Bosch process for depositing a fluorocarbon layer on the substrate surface, the deposition rate varied with the ion incident angle, showing an S-shaped curve. These characteristic deposition rate curves, which were highly dependent on the process conditions, could be divided into four distinct regions: a Si sputtering region, an ion-suppressed polymer deposition region, an ion-enhanced polymer deposition region, and an ion-free polymer deposition region. Based on the earlier characteristic angular dependences of the etch (or deposition) rates in the individual systems, ideal process conditions for obtaining an anisotropic etch profile in the advanced Bosch process are proposed. .

A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

NASA Astrophysics Data System (ADS)

Roozeboom, F.; Kniknie, B.; Lankhorst, A. M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.; Dingemans, G.; Keuning, W.; Kessels, W. M. M.

2012-12-01

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatially-divided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing 'curtains' of heights down to ~20 μm. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C4F8 passivation steps by ALD-based oxide (e.g. SiO2) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Localized etching of polymer films using an atmospheric pressure air microplasma jet

NASA Astrophysics Data System (ADS)

Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

2015-01-01

A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min-1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ.

Deterministic Nanopatterning of Diamond Using Electron Beams.

PubMed

Bishop, James; Fronzi, Marco; Elbadawi, Christopher; Nikam, Vikram; Pritchard, Joshua; Fröch, Johannes E; Duong, Ngoc My Hanh; Ford, Michael J; Aharonovich, Igor; Lobo, Charlene J; Toth, Milos

2018-03-27

Diamond is an ideal material for a broad range of current and emerging applications in tribology, quantum photonics, high-power electronics, and sensing. However, top-down processing is very challenging due to its extreme chemical and physical properties. Gas-mediated electron beam-induced etching (EBIE) has recently emerged as a minimally invasive, facile means to dry etch and pattern diamond at the nanoscale using oxidizing precursor gases such as O 2 and H 2 O. Here we explain the roles of oxygen and hydrogen in the etch process and show that oxygen gives rise to rapid, isotropic etching, while the addition of hydrogen gives rise to anisotropic etching and the formation of topographic surface patterns. We identify the etch reaction pathways and show that the anisotropy is caused by preferential passivation of specific crystal planes. The anisotropy can be controlled by the partial pressure of hydrogen and by using a remote RF plasma source to radicalize the precursor gas. It can be used to manipulate the geometries of topographic surface patterns as well as nano- and microstructures fabricated by EBIE. Our findings constitute a comprehensive explanation of the anisotropic etch process and advance present understanding of electron-surface interactions.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Molecular dynamics simulations of plasma-surface interactions

NASA Astrophysics Data System (ADS)

Vegh, Joseph James

Molecular dynamics (MD) simulations are carried out to examine the fundamental mechanisms of plasma-surface interactions for various systems of interest to the semiconductor industry. These include ion and radical bombardment simulations of silicon, model low-k dielectric materials, and hydrocarbon (HC) based model photoresist materials. Simulations of fluorocarbon (FC), fluorine, and argon ion etching of silicon are conducted to find conditions under which the steady state etch of Si in the presence of a FC surface layer occurs. By varying the FC/F/Ar + ratios over a range of conditions, a correlation between FC layer thickness and Si etch yield (EY) is obtained that agrees qualitatively with experimentally observed trends. Further examination of this system allows for a Si etch mechanism to be proposed. This mechanism is similar to that seen in previous Si etching simulations where FC films do not form. The FC layer is observed to fluctuate in thickness during steady state Si etch, as the result of competition between FC deposition and sputtering of relatively large (> 6 C atoms) FC clusters during Ar+ impacts. This cluster ejection process is seen in all of the systems studied, and the properties of these clusters (composition, size, kinetic energy, etc.) are examined and catalogued. Ar+ and H radical and ion bombardment of a methylated Si surface is simulated as a model of plasma etching of low-k dielectric materials. The mechanisms and product distributions observed for 300 K H radical bombardment agree well with experiment. The etch characteristics of Ar+ bombardment are examined as a function of ion energy, and the corresponding variations in surface structure at high ion fluence are characterized. Various HC polymer surfaces are studied under ion and radical bombardment to examine plasma species interactions with model photoresist materials. Simulations of 100 eV Ar+ bombardment of polystyrene (PS), poly(4-methylstyrene) (P4MS), and poly(alpha-methylstyrene) (PalphaMS) show that for all of these materials (which have similar chemical compositions: PS: (C8H 8)x, PalphaMS and P4MS: (C9H 10)x), a densely crosslinked, dehydrogenated damaged layer forms at high ion fluences that greatly reduces the sputter yield of the material. During the initial transient period of bombardment, PalphaMS shows sputter yields nearly twice as high as P4MS or PS; polymer structure can play a role during the early stages of etch. Both the initial and high fluence etch characteristics match those observed experimentally. Further, fluctuations from cell-to-cell are much higher for the PalphaMS simulations, which may correlate to the increased roughening observed experimentally for PalphaMS. Additional simulations are carried out to examine the effects of H and F radical addition during Ar+ bombardment of PS. Both radical species are shown to inhibit and/or reverse the formation of the dehydrogenated layer that forms during bombardment with Ar+ alone. Further studies examine the effect of inert ion mass through simulations of Ar +, Xe+, and He+ bombardment of PS, amorphous C, and nanoscale features on diamond surfaces. The differences in penetration depth, kinetic energy deposition, and scattering patterns are suggestive of the differing etch characteristics that are seen experimentally for these ions. A discussion of dangling bond formation during ion bombardment and longer time-scale dynamics is also offered. A brief review of currently available potential energy functions is presented. Selected results from MD simulations that utilize some of these potentials and are closely related to the work in this dissertation are also discussed. The difficulties of expanding potential energy functions vis-a-vis commonly used ab initio quantum chemical calculations are also addressed.

InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.

PubMed

Huang, Yinggang; Kim, Tae Wan; Xiong, Shisheng; Mawst, Luke J; Kuech, Thomas F; Nealey, Paul F; Dai, Yushuai; Wang, Zihao; Guo, Wei; Forbes, David; Hubbard, Seth M; Nesnidal, Michael

2013-01-01

Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (~10 nm) SiNx layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF4 reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ~ 20 nm and micrometer-scale lengths were achieved with a density of ~ 5 × 10(10) cm(2). The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.

Two-Dimensional Planar Lightwave Circuit Integrated Spatial Filter Array and Method of Use Thereof

NASA Technical Reports Server (NTRS)

Dimov, Fedor (Inventor); Ai, Jun (Inventor)

2015-01-01

A large coherent two-dimensional (2D) spatial filter array (SFA), 30 by 30 or larger, is produced by coupling a 2D planar lightwave circuit (PLC) array with a pair of lenslet arrays at the input and output side. The 2D PLC array is produced by stacking a plurality of chips, each chip with a plural number of straight PLC waveguides. A pupil array is coated onto the focal plane of the lenslet array. The PLC waveguides are produced by deposition of a plural number of silica layers on the silicon wafer, followed by photolithography and reactive ion etching (RIE) processes. A plural number of mode filters are included in the silica-on-silicon waveguide such that the PLC waveguide is transparent to the fundamental mode but higher order modes are attenuated by 40 dB or more.

Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

NASA Astrophysics Data System (ADS)

Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

2016-07-01

Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

Morphologies of Solid Surfaces Produced Far from Equilibrium

DTIC Science & Technology

1991-03-10

common to all these applications is that thc surface preparation processes used are far from chemical equilibrium. Many of the processes involve an...energetic ion beam, plasma or gas that is used to modify a surface, either by etching or depositing material. The electrical, optical and mechanical...growth, a number of continuum models have been used in the materials science literature, in particular in the context of electron-beam etching of

Modeling and measurement of hydrogen radical densities of in situ plasma-based Sn cleaning source

NASA Astrophysics Data System (ADS)

Elg, Daniel T.; Panici, Gianluca A.; Peck, Jason A.; Srivastava, Shailendra N.; Ruzic, David N.

2017-04-01

Extreme ultraviolet (EUV) lithography sources expel Sn debris. This debris deposits on the collector optic used to focus the EUV light, lowering its reflectivity and EUV throughput to the wafer. Consequently, the collector must be cleaned, causing source downtime. To solve this, a hydrogen plasma source was developed to clean the collector in situ by using the collector as an antenna to create a hydrogen plasma and create H radicals, which etch Sn as SnH4. This technique has been shown to remove Sn from a 300-mm-diameter stainless steel dummy collector. The H radical density is of key importance in Sn etching. The effects of power, pressure, and flow on radical density are explored. A catalytic probe has been used to measure radical density, and a zero-dimensional model is used to provide the fundamental science behind radical creation and predict radical densities. Model predictions and experimental measurements are in good agreement. The trends observed in radical density, contrasted with measured Sn removal rates, show that radical density is not the limiting factor in this etching system; other factors, such as SnH4 redeposition and energetic ion bombardment, must be more fully understood in order to predict removal rates.

ESCA study of several fluorocarbon polymers exposed to atomic oxygen in low earth orbit or within or downstream from a radio-frequency oxygen plasma

NASA Technical Reports Server (NTRS)

Golub, Morton A.; Wydeven, Theodore; Cormia, Robert D.

1989-01-01

The ESCA (electron spectroscopy for chemical analysis) spectra of films of Tedlar, tetrafluoroethylene-hexafluoropropylene copolymer (in the form of a Teflon FEP coating on Kapton H, i.e., Kapton F), and polytetrafluoroethylene (Teflon or Teflon TFE), exposed to atomic oxygen O(3P) either in LEO on the STS-8 Space Shuttle or within or downstream from a radio-frequency oxygen plasma, were compared. The major difference in surface chemistry of Tedlar induced by the various exposures to O(3P) was a much larger uptake of oxygen when etched either in or out of the glow of an O2 plasma than when etched in LEO. In contrast, Kapton F exhibited very little surface oxidation during any of the three different exposures to O(3P), while Teflon was scarcely oxidized.

Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

NASA Astrophysics Data System (ADS)

Ohtsu, Yasunori; Nagamatsu, Kenta

2018-01-01

We developed an atmospheric-pressure plasma jet (APPJ) system with a tungsten rod electrode coated with C2F4 particles of approximately 0.3 µm diameter for the surface treatment of a silicon wafer. The APPJ was generated by dielectric barrier discharge with a driving frequency of 22 kHz using a He gas flow. The characteristics of the APPJ were examined under various experimental conditions. The plasma jet length increased proportionally to the electric field. It was found that the treatment area of the silicon wafer was approximately 1 mm in diameter. By atomic force microscopy analysis, minute irregularities with a maximum length of about 600 nm and part of a ring-shaped trench were observed. A Si etching rate of approximately 400 nm/min was attained at a low power of 6 W and a He flow rate of 1 L/min without introducing molecular gas including F atoms.

Formation mechanism of graphite hexagonal pyramids by argon plasma etching of graphite substrates

NASA Astrophysics Data System (ADS)

Glad, X.; de Poucques, L.; Bougdira, J.

2015-12-01

A new graphite crystal morphology has been recently reported, namely the graphite hexagonal pyramids (GHPs). They are hexagonally-shaped crystals with diameters ranging from 50 to 800 nm and a constant apex angle of 40°. These nanostructures are formed from graphite substrates (flexible graphite and highly ordered pyrolytic graphite) in low pressure helicon coupling radiofrequency argon plasma at 25 eV ion energy and, purportedly, due to a physical etching process. In this paper, the occurrence of peculiar crystals is shown, presenting two hexagonal orientations obtained on both types of samples, which confirms such a formation mechanism. Moreover, by applying a pretreatment step with different time durations of inductive coupling radiofrequency argon plasma, for which the incident ion energy decreases at 12 eV, uniform coverage of the surface can be achieved with an influence on the density and size of the GHPs.

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies.

PubMed

Faraz, Tahsin; van Drunen, Maarten; Knoops, Harm C M; Mallikarjunan, Anupama; Buchanan, Iain; Hausmann, Dennis M; Henri, Jon; Kessels, Wilhelmus M M

2017-01-18

The advent of three-dimensional (3D) finFET transistors and emergence of novel memory technologies place stringent requirements on the processing of silicon nitride (SiN x ) films used for a variety of applications in device manufacturing. In many cases, a low temperature (<400 °C) deposition process is desired that yields high quality SiN x films that are etch resistant and also conformal when grown on 3D substrate topographies. In this work, we developed a novel plasma-enhanced atomic layer deposition (PEALD) process for SiN x using a mono-aminosilane precursor, di(sec-butylamino)silane (DSBAS, SiH 3 N( s Bu) 2 ), and N 2 plasma. Material properties have been analyzed over a wide stage temperature range (100-500 °C) and compared with those obtained in our previous work for SiN x deposited using a bis-aminosilane precursor, bis(tert-butylamino)silane (BTBAS, SiH 2 (NH t Bu) 2 ), and N 2 plasma. Dense films (∼3.1 g/cm 3 ) with low C, O, and H contents at low substrate temperatures (<400 °C) were obtained on planar substrates for this process when compared to other processes reported in the literature. The developed process was also used for depositing SiN x films on high aspect ratio (4.5:1) 3D trench nanostructures to investigate film conformality and wet-etch resistance (in dilute hydrofluoric acid, HF/H 2 O = 1:100) relevant for state-of-the-art device architectures. Film conformality was below the desired levels of >95% and attributed to the combined role played by nitrogen plasma soft saturation, radical species recombination, and ion directionality during SiN x deposition on 3D substrates. Yet, very low wet-etch rates (WER ≤ 2 nm/min) were observed at the top, sidewall, and bottom trench regions of the most conformal film deposited at low substrate temperature (<400 °C), which confirmed that the process is applicable for depositing high quality SiN x films on both planar and 3D substrate topographies.

Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate.

PubMed

Men, Dandan; Wu, Yingyi; Wang, Chu; Xiang, Junhuai; Yang, Ganlan; Wan, Changjun; Zhang, Honghua

2018-02-04

Two-dimensional (2D) periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO₂ nanopillar arrays decorated with Ag nanoparticles (NPs) with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE), depositing Ag layer and annealing. For the prepared SiO₂ nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO₂ nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP) and rhodamine 6G (R6G) due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO₂ nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density "hotspots" derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.

A novel fabrication method for suspended high-aspect-ratio microstructures

NASA Astrophysics Data System (ADS)

Yang, Yao-Joe; Kuo, Wen-Cheng

2005-11-01

Suspended high-aspect-ratio structures (suspended HARS) are widely used for MEMS devices such as micro-gyroscopes, micro-accelerometers, optical switches and so on. Various fabrication methods, such as SOI, SCREAM, AIM, SBM and BELST processes, were proposed to fabricate HARS. However, these methods focus on the fabrication of suspended microstructures with relatively small widths of trench opening (e.g. less than 10 µm). In this paper, we propose a novel process for fabricating very high-aspect-ratio suspended structures with large widths of trench opening using photoresist as an etching mask. By enhancing the microtrenching effect, we can easily release the suspended structure without thoroughly removing the floor polymer inside the trenches for the cases with a relatively small trench aspect ratio. All the process steps can be integrated into a single-run single-mask ICP-RIE process, which effectively reduces the process complexity and fabrication cost. We also discuss the phenomenon of corner erosion, which results in the undesired etching of silicon structures during the structure-releasing step. By using the proposed process, 100 µm thick suspended structures with the trench aspect ratio of about 20 are demonstrated. Also, the proposed process can be used to fabricate devices for applications which require large in-plane displacement. This paper was orally presented in the Transducers'05, Seoul, Korea (paper ID: 3B1.3).

Design and fabrication of a MEMS chevron-type thermal actuator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baracu, Angela, E-mail: angela.baracu@imt.ro; Voicu, Rodica; Müller, Raluca

This paper presents the design and fabrication of a MEMS chevron-type thermal actuator. The device was designed for fabrication in the standard MEMS technology, where the topography of the upper layers depends on the patterns of structural and sacrificial layers underneath. The proposed actuator presents some advantages over usual thermal vertical chevron actuators by means of low operating voltages, high output force and linear movement without deformation of the shaft. The device simulations were done using COVENTOR software. The movement obtained by simulation was 12 μm, for a voltage of 0.2 V and the current intensity of 257 mA. Themore » design optimizes the in-plane displacement by fixed anchors and beam inclination angle. Heating is provided by Joule dissipation. The material used for manufacture of chevron-based actuator was aluminum due to its thermal and mechanical properties. The release of the movable part was performed using isotropic dry etching by Reactive Ion Etching (RIE). A first inspection was achieved using Scanning Electron Microscope (SEM). In order to obtain the in-plane displacement we carried out electrical measurements. The thermal actuator can be used for a variety of optical and microassembling applications. This kind of thermal actuator could be integrated easily with other micro devices since its fabrication is compatible with the general semiconductor processes.« less

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Fabrication and Modification of Nanoporous Silicon Particles

NASA Technical Reports Server (NTRS)

Ferrari, Mauro; Liu, Xuewu

2010-01-01

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

Analysis of radiofrequency discharges in plasma

DOEpatents

Kumar, Devendra; McGlynn, Sean P.

1992-01-01

Separation of laser optogalvanic signals in plasma into two components: (1) an ionization rate change component, and (2) a photoacoustic mediated component. This separation of components may be performed even when the two components overlap in time, by measuring time-resolved laser optogalvanic signals in an rf discharge plasma as the rf frequency is varied near the electrical resonance peak of the plasma and associated driving/detecting circuits. A novel spectrometer may be constructed to make these measurements. Such a spectrometer would be useful in better understanding and controlling such processes as plasma etching and plasma deposition.

High-Frequency (>50 MHz) Medical Ultrasound Linear Arrays Fabricated From Micromachined Bulk PZT Materials

PubMed Central

Liu, Changgeng; Zhou, Qifa; Djuth, Frank T.; Shung, K. Kirk

2012-01-01

This paper describes the development and characterization of a high-frequency (65-MHz) ultrasound transducer linear array. The array was built from bulk PZT which was etched using an optimized chlorine-based plasma dry-etching process. The median etch rate of 8 μm/h yielded a good profile (wall) angle (>83°) and a reasonable processing time for etch depths up to 40 μm (which corresponds to a 50-MHz transducer). A backing layer with an acoustic impedance of 6 MRayl and a front-end polymer matching layer yielded a transducer bandwidth of 40%. The major parameters of the transducer have been characterized. The two-way insertion loss and crosstalk between adjacent channels at the center frequency are 26.5 and −25 dB, respectively. PMID:24626041

Mini-interfacial Fracture Toughness of a Multimode Adhesive Bonded to Plasma-treated Dentin.

PubMed

Ayres, Ana Paula Almeida; Pongprueksa, Pong; De Munck, Jan; Gré, Cristina Parise; Nascimento, Fábio Dupart; Giannini, Marcelo; Van Meerbeek, Bart

2017-01-01

To investigate the bonding efficacy of a multimode adhesive to plasma-treated and -untreated (control) dentin using a mini-interfacial fracture toughness (mini-iFT) test. Twenty human molars were used in a split-tooth design (n = 10). The adhesive Scotchbond Universal (SBU; 3M ESPE) was applied in etch-and-rinse (E&R) and self-etch (SE) modes. Mid-coronal dentin was exposed and covered with a standardized smear layer ground to 320 grit. One half of each dentin surface received 15 s of non-thermal atmospheric plasma (NTAP), while the other half was covered with a metallic barrier and kept untreated. Following the E&R mode, dentin was plasma treated immediately after phosphoric acid etching. SBU and a resin-based composite were applied to dentin following the manufacturer's instructions. Six mini-iFT specimens were prepared per tooth (1.5 x 2.0 x 16 to 18 mm), and a single notch was prepared at the adhesive-dentin interface using a 150-μm diamond blade under water cooling. Half of the mini-iFT specimens were immediately loaded until failure in a 4-point bending test, while the other half were first stored in distilled water for 6 months. After testing, the exact dimensions of the notch were measured with a measuring optical microscope, from which ΚIc was determined. Three-way ANOVA revealed higher mini-iFT for SBU applied in E&R than SE mode for both storage times, irrespective of NTAP treatment. Overall, mini-iFT did not decrease for any of the experimental groups upon 6-month aging, while plasma treatment did not show a direct beneficial effect on mini-iFT of SBU applied in either E&R or SE mode.

Atomic Precision Plasma Processing - Modeling Investigations

NASA Astrophysics Data System (ADS)

Rauf, Shahid

2016-09-01

Sub-nanometer precision is increasingly being required of many critical plasma processes in the semiconductor industry. Some of these critical processes include atomic layer etch and plasma enhanced atomic layer deposition. Accurate control over ion energy and ion / radical composition is needed during plasma processing to meet the demanding atomic-precision requirements. While improvements in mainstream inductively and capacitively coupled plasmas can help achieve some of these goals, newer plasma technologies can expand the breadth of problems addressable by plasma processing. Computational modeling is used to examine issues relevant to atomic precision plasma processing in this paper. First, a molecular dynamics model is used to investigate atomic layer etch of Si and SiO2 in Cl2 and fluorocarbon plasmas. Both planar surfaces and nanoscale structures are considered. It is shown that accurate control of ion energy in the sub-50 eV range is necessary for atomic scale precision. In particular, if the ion energy is greater than 10 eV during plasma processing, several atomic layers get damaged near the surface. Low electron temperature (Te) plasmas are particularly attractive for atomic precision plasma processing due to their low plasma potential. One of the most attractive options in this regard is energetic-electron beam generated plasma, where Te <0.5 eV has been achieved in plasmas of molecular gases. These low Te plasmas are computationally examined in this paper using a hybrid fluid-kinetic model. It is shown that such plasmas not only allow for sub-5 eV ion energies, but also enable wider range of ion / radical composition. Coauthors: Jun-Chieh Wang, Jason Kenney, Ankur Agarwal, Leonid Dorf, and Ken Collins.

Control technology for integrated circuit fabrication at Micro-Circuit Engineering, Incorporated, West Palm Beach, Florida

NASA Astrophysics Data System (ADS)

Mihlan, G. I.; Mitchell, R. I.; Smith, R. K.

1984-07-01

A survey to assess control technology for integrated circuit fabrication was conducted. Engineering controls included local and general exhaust ventilation, shielding, and personal protective equipment. Devices or work stations that contained toxic materials that were potentially dangerous were controlled by local exhaust ventilation. Less hazardous areas were controlled by general exhaust ventilation. Process isolation was used in the plasma etching, low pressure chemical vapor deposition, and metallization operations. Shielding was used in ion implantation units to control X-ray emissions, in contact mask alignes to limit ultraviolet (UV) emissions, and in plasma etching units to control radiofrequency and UV emissions. Most operations were automated. Use of personal protective equipment varied by job function.

Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Kondyurin, Alexey; Bilek, Marcela

2011-06-01

A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10 15 ions/cm 2 was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.

Spent nuclear fuel recycling with plasma reduction and etching

DOEpatents

Kim, Yong Ho

2012-06-05

A method of extracting uranium from spent nuclear fuel (SNF) particles is disclosed. Spent nuclear fuel (SNF) (containing oxides of uranium, oxides of fission products (FP) and oxides of transuranic (TRU) elements (including plutonium)) are subjected to a hydrogen plasma and a fluorine plasma. The hydrogen plasma reduces the uranium and plutonium oxides from their oxide state. The fluorine plasma etches the SNF metals to form UF₆ and PuF₄. During subjection of the SNF particles to the fluorine plasma, the temperature is maintained in the range of 1200-2000 deg K to: a) allow any PuF₆ (gas) that is formed to decompose back to PuF₄ (solid), and b) to maintain stability of the UF₆. Uranium (in the form of gaseous UF₆) is easily extracted and separated from the plutonium (in the form of solid PuF₄). The use of plasmas instead of high temperature reactors or flames mitigates the high temperature corrosive atmosphere and the production of PuF₆ (as a final product). Use of plasmas provide faster reaction rates, greater control over the individual electron and ion temperatures, and allow the use of CF₄ or NF₃ as the fluorine sources instead of F₂ or HF.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kokkoris, George; Boudouvis, Andreas G.; Gogolides, Evangelos

An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number of applications is presented. First, a detailed and functional set of equations for the neutral and ion flux calculations inside long trenches and holes with cylindrical symmetry is explicitly formulated. This set is based on early works [T. S. Cale and G. B. Raupp, J. Vac. Sci. Technol. B 8, 1242 (1990); V. K. Singh et al., J. Vac. Sci. Technol. B 10, 1091 (1992)], and includes new equations for themore » case of holes with cylindrical symmetry. Second, a method for the solution of the respective numerical task, i.e., one or a set of linear or nonlinear integral equations, is described. This method includes a coupling algorithm with a surface chemistry model and resolves the singularity problem of the integral equations. Third, the fluxes inside trenches and holes are compared. The flux from reemission is the major portion of the local flux at the bottom of both types of structure. The framework is applied in SiO{sub 2} etching by fluorocarbon plasmas to predict the increased intensity of reactive ion etching lag in SiO{sub 2} holes compared to trenches. It is also applied in deep Si etching: By calculating the flux of F atoms at the bottom of very high aspect ratio (up to 150) Si trenches and holes during the gas chopping process, the aspect ratio at which the flux of F atoms is eliminated and etching practically stops is estimated.« less

Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

NASA Astrophysics Data System (ADS)

Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

2015-05-01

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

Fabrication et caracterisation de cristaux photoniques pour exaltation de fluorescence

NASA Astrophysics Data System (ADS)

Gascon, Annabelle

2011-12-01

In today's world, there is a pressing need for point-of-care molecular analysis that is fast, inexpensive and transportable. Lab-on-a- chips are designed to fulfill that need. They are micro-electromechanical systems (MEMS), fabricated with microelectronic techniques, that use the analytes physical properties to detect their presence in liquid samples. This detection can be performed by attaching the analyte to quantum dots. These quantum dots are semiconducting nanoparticles with narrow fluorescence band. In our project, we use a tuneable system with a two-slab photonic crystal that serves as a tuneable optical filter, detecting the presence and wavelength of these quantum dots. Photonic crystals are dielectrics with a variable refractive index, with a period near the visible light wavelength. They are called photonic crystals because they have a photonic band gap just as atomic crystals, periodic structure of atoms, have an electronic band gap. They are photonic because photons instead of electrons propagate through them. They can also enhance fluorescence from quantum dots at the photonic crystals guided resonance wavelength. My project objectives are to: (1) Fabricate two-slab photonic crystal, (2) Characterize photonic crystals, (3) Place quantum dots on photonic crystals, (4) Measure fluorescence enhancement. The device made during this project consists of a silicon wafer on which were deposited a 200 nm silicon nitride layer, then a 200 nm silicon dioxide layer and finally another 200 nm silicon nitride layer. An electron-beam lithography defines the photonic crystals and the MEMS. The photonic crystals are square lattices of holes 180 nm in diameter, at a period of 460 nm, etched through the two silicon nitride slabs. The two slabs are etched in a single step of Reactive Ion Etching (RIE). Then, the silicon under the photonic crystal is etched from the backside up to the nitride by deep-RIE. Finally, the oxide layer is removed in order to completely suspend the two-slab photonic crystal. The M EMS can change the gap between the two slabs in order to tune the guided resonance wavelength. An optical set-up is used to trace the photonic crystals transmission and reflection spectrum, in order to know the guided resonance position. A supercontinuum source illuminates the device at a normal incidence angle for wavelength between 400 nm and 800 nm. High-resolution spectra are obtained with a CCD camera spectrometer. Different types of one-slab photonic crystals are analyzed with this approach: we observe guided resonance peaks near 550 nm, 615 nm and 700 nm. Finally, a quantum dots microdrop is placed on the photonic crystal. The quantum dots emission wavelength matches with the photonic crystal guided resonance. A hyperspectral fluorescence microscope excites quantum dots between 436 nm and 483 nm, detects emission greater than 500 nm and plots a fluorescence wavelength spectrum. This set-up measures and compares the fluorescence of the quantum dots placed on and next to the photonic crystals. Our results show that the fluorescence is 30 times higher on the photonic crystals, but the fluorescence wavelength corresponds neither to the quantum dots emission nor to the photonic crystal guided resonance. In conclusion, this master thesis project demonstrates that it is possible to fabricate two-slab photonic crystals in silicon nitride and to plot their transmission and reflection spectra in order to find their guided resonance position. A fluorescence enhancement is visible, but at a different wavelength than of the quantum dots.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Overcoming Etch Challenges on a 6″ Hg1- x Cd x Te MBE on Si Wafer

NASA Astrophysics Data System (ADS)

Apte, Palash; Norton, Elyse; Robinson, Solomon

2017-10-01

The effect of increasing photoresist (PR) thickness on the inductively coupled plasma (ICP) dry etched characteristics of a 6″ (c.15 cm) molecular beam epitaxy Hg1- x Cd x Te/Si wafer is investigated. It is determined that the Hg1- x Cd x Te etch rate (ER) does not vary significantly with a change in the PR thickness. Also, the vertical ER of the PR is seen to be independent of the PR thickness, but the lateral ER is seen to reduce significantly with increased PR thickness. Indeed, very little reduction in the pixel mesa area post-dry etch is seen for the thicker PR. Consequently, the trench sidewall angle is also seen to vary as a function of the PR thickness. Since ICP is the more attractive choice for dry etching Hg1- x Cd x Te, this simple, cost-effective way to extend the capabilities of dry etching (larger mesa top area post-dry etch, ability to create tailor-made trench sidewall angles for optimal conformal passivation deposition, and potential for reduced dry etch damage) described here would allow for the fabrication of next generation infrared detectors with increased yield and reduced cost. Although similar results have been presented using the electron cyclotron resonance system to dry etch Hg1- x Cd x Te, to the best of our knowledge, this is the first time that such results have been presented using an ICP system.

Study on the performance of 2.6 μm In0.83Ga0.17As detector with different etch gases

NASA Astrophysics Data System (ADS)

Li, Ping; Tang, Hengjing; Li, Tao; Li, Xue; Shao, Xiumei; Ma, Yingjie; Gong, Haimei

2017-09-01

In order to obtain a low-damage recipe in the ICP processing, ICP-induced damage using Cl2/CH4 etch gases in extended wavelength In0.83Ga0.17As detector materials was studied in this paper. The effect of ICP etching on In0.83Ga0.17As samples was characterized qualitatively by the photoluminescence (PL) technology. The etch damage of In0.83Ga0.17As samples was characterized quantitatively by the Transmission Line Model (TLM), current voltage (IV) measurement, signal and noise testing and the Fourier Transform Infrared Spectroscopy (FTIR) technologies. The results showed that the Cl2/CH4 etching processing could lead better detector performance than that Cl2/N2, such as a larger square resistance, a lower dark current, a lower noise voltage and a higher peak detectivity. The lower PL signal intensity and lower dark current could be attributed to the hydrogen decomposed by the CH4 etch gases in the plasma etching process. These hydrogen particles generated non-radiative recombination centers in inner materials to weaken the PL intensity and passivated dangling bond at the surface to reduce the dark current. The larger square resistance resulted from the lower etch damage. The lower dark current meant that the detectors have less dangling bonds and leakage channels.

Real-Time Plasma Process Condition Sensing and Abnormal Process Detection

PubMed Central

Yang, Ryan; Chen, Rongshun

2010-01-01

The plasma process is often used in the fabrication of semiconductor wafers. However, due to the lack of real-time etching control, this may result in some unacceptable process performances and thus leads to significant waste and lower wafer yield. In order to maximize the product wafer yield, a timely and accurately process fault or abnormal detection in a plasma reactor is needed. Optical emission spectroscopy (OES) is one of the most frequently used metrologies in in-situ process monitoring. Even though OES has the advantage of non-invasiveness, it is required to provide a huge amount of information. As a result, the data analysis of OES becomes a big challenge. To accomplish real-time detection, this work employed the sigma matching method technique, which is the time series of OES full spectrum intensity. First, the response model of a healthy plasma spectrum was developed. Then, we defined a matching rate as an indictor for comparing the difference between the tested wafers response and the health sigma model. The experimental results showed that this proposal method can detect process faults in real-time, even in plasma etching tools. PMID:22219683

193-nm multilayer imaging systems

NASA Astrophysics Data System (ADS)

Meador, James D.; Holmes, Doug; DiMenna, William; Nagatkina, Mariya I.; Rich, Michael D.; Flaim, Tony D.; Bennett, Randy; Kobayashi, Ichiro

2003-06-01

This paper highlights the performance of new materials that have been developed for use in 193-nm trilayer microlithography. The products are embedded etch masking layers (EMLs) and bottom antireflective coatings (BARCs). Both coatings are spin applied from organic solvent(s) and then thermoset during a hot plate bake. The EMLs (middle layers) are imaging compatible with JSR, Sumitomo, and TOK 193-nm photoresists. Best-case trilayer film stacks have given 100-nm dense and semi-dense L/S. Plasma etching, selectivities and solution compatibility performance of the EMLs meet or exceed proposed product targets. In addition, the EMLs exhibit both solution and plasma etching properties that should lead to successful rework processes for photoresists. The multiplayer BARCs offer good thick film coating quality and contribute to excellent images when used in trilayer applications. Combining the EMLs, which are nearly optically transparent (k=0.04) at 193-nm, with the new trilayer BARCs results in outstanding Prolith simulated reflectance control. In one modeling example, reflectance is a flat line at 0.5% on five different substrates for BARC thicknesses between 300 and 700-nm.

Single photon emission from plasma treated 2D hexagonal boron nitride.

PubMed

Xu, Zai-Quan; Elbadawi, Christopher; Tran, Toan Trong; Kianinia, Mehran; Li, Xiuling; Liu, Daobin; Hoffman, Timothy B; Nguyen, Minh; Kim, Sejeong; Edgar, James H; Wu, Xiaojun; Song, Li; Ali, Sajid; Ford, Mike; Toth, Milos; Aharonovich, Igor

2018-05-03

Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature with emission wavelengths greater than ∼700 nm. Density functional theory modeling suggests that the emitters might be associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters via annealing hBN in air. Our findings advance the present understanding of the structure of quantum emitters in hBN and enhance the nanofabrication toolkit needed to realize integrated quantum nanophotonic circuits.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

NASA Astrophysics Data System (ADS)

Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

2016-10-01

In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Role of microstructure and doping on the mechanical strength and toughness of polysilicon thin films

DOE PAGES

Yagnamurthy, Sivakumar; Boyce, Brad L.; Chasiotis, Ioannis

2015-03-24

We investigated the role of microstructure and doping on the mechanical strength of microscale tension specimens of columnar grain and laminated polysilicon doped with different concentrations of phosphorus. The average tensile strengths of undoped columnar and laminated polysilicon specimens were 1.3 ± 0.1 and 2.45 ± 0.3 GPa, respectively. Heavy doping reduced the strength of columnar polysilicon specimens to 0.9 ± 0.1 GPa. On grounds of Weibull statistics, the experimental results from specimens with gauge sections of 1000 μm × 100 μm × 1 μm predicted quite well the tensile strength of specimens with gauge sections of 150 μm ×more » 3.75 μm × 1 μm, and vice versa. The large difference in the mechanical strength between columnar and laminated polysilicon specimens was due to sidewall flaws in columnar polysilicon, which were introduced during reactive ion etching (RIE) and were further exacerbated by phosphorus doping. Moreover, the removal of the large defect regions at the sidewalls of columnar polysilicon specimens via ion milling increased their tensile strength by 70%-100%, approaching the strength of laminated polysilicon, which implies that the two types of polysilicon films have comparable tensile strength. Measurements of the effective mode I critical stress intensity factor, KIC,eff, also showed that all types of polysilicon films had comparable resistance to fracture. Therefore, additional processing steps to eliminate the edge flaws in RIE patterned devices could result in significantly stronger microelectromechanical system components fabricated by conventional columnar polysilicon films.« less

Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip

DOEpatents

Kittrell, W. Carter; Wang, Yuhuang; Kim, Myung Jong; Hauge, Robert H.; Smalley, Richard E.; Marek leg, Irene Morin

2010-06-01

The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.

2016-10-15

The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

Processing, Fabrication and Characterization of Advanced Target Sensors Using Mercury Cadmium Telluride (MCT)

DTIC Science & Technology

2010-09-01

doped with Au, Hg, Cd, Be, or Ga); or (3) photoemissive such as metal silicides and negative electron affinity materials. Photoconductive and...plasma (ICP) etching and metallization as required by the design of the sensors at different levels of processing were carried out using either AZ...Second, after all the processing and metallization is completed, the sensor material (Hg1–xCdxTe) and the substrate (silicon) must be dry etched

A micro-scale plasma spectrometer for space and plasma edge applications (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scime, E. E., E-mail: escime@wvu.edu; Keesee, A. M.; Elliott, D.

2016-11-15

A plasma spectrometer design based on advances in lithography and microchip stacking technologies is described. A series of curved plate energy analyzers, with an integrated collimator, is etched into a silicon wafer. Tests of spectrometer elements, the energy analyzer and collimator, were performed with a 5 keV electron beam. The measured collimator transmission and energy selectivity were in good agreement with design targets. A single wafer element could be used as a plasma processing or fusion first wall diagnostic.

In-situ monitoring of etching of bovine serum albumin using low-temperature atmospheric plasma jet

NASA Astrophysics Data System (ADS)

Kousal, J.; Shelemin, A.; Kylián, O.; Slavínská, D.; Biederman, H.

2017-01-01

Bio-decontamination of surfaces by means of atmospheric pressure plasma is nowadays extensively studied as it represents promising alternative to commonly used sterilization/decontamination techniques. The non-equilibrium atmospheric pressure plasmas were already reported to be highly effective in removal of a wide range of biological residual from surfaces. Nevertheless the kinetics of removal of biological contamination from surfaces is still not well understood as the majority of performed studies were based on ex-situ evaluation of etching rates, which did not allow investigating details of plasma action on biomolecules. This study therefore presents a real-time, in-situ ellipsometric characterization of removal of bovine serum albumin (BSA) from surfaces by low-temperature atmospheric plasma jet operated in argon. Non-linear and at shorter distances between treated samples and nozzle of the plasma jet also non-monotonic dependence of the removal rate on the treatment duration was observed. According to additional measurements focused on the determination of chemical changes of treated BSA as well as temperature measurements, the observed behavior is most likely connected with two opposing effects: the formation of a thin layer on the top of BSA deposit enriched in inorganic compounds, whose presence causes a gradual decrease of removal efficiency, and slight heating of BSA that facilitates its degradation and volatilization induced by chemically active radicals produced by the plasma.

Analysis of radiofrequency discharges in plasma

DOEpatents

Kumar, D.; McGlynn, S.P.

1992-08-04

Separation of laser optogalvanic signals in plasma into two components: (1) an ionization rate change component, and (2) a photoacoustic mediated component. This separation of components may be performed even when the two components overlap in time, by measuring time-resolved laser optogalvanic signals in an rf discharge plasma as the rf frequency is varied near the electrical resonance peak of the plasma and associated driving/detecting circuits. A novel spectrometer may be constructed to make these measurements. Such a spectrometer would be useful in better understanding and controlling such processes as plasma etching and plasma deposition. 15 figs.

PECVD de composes de silicium sur polymeres: Etude de la premiere phase du depot

NASA Astrophysics Data System (ADS)

Dennler, Gilles

Since their first introduction in the early 90's, transparent barriers against oxygen and/or water vapor permeation through polymers, such as SiO 2, are the object of increasing interest in the food and pharmaceutical packaging industries, and more recently for the encapsulation of organic-based displays. It is now well known that these thin layers possess barrier properties only if they are thicker than a certain critical thickness, dc. For example, dc is around 12 nm in the case of SiO2 on KaptonRTM PI; below this value, the measured "Oxygen Transmission Rate" (OTR, in standard cm3/m2/day/bar) is roughly the same as that of the uncoated polymer. Until now, no detailed research has been carried out to explain this observation, but a hypothesis was proposed in the literature, based on island-like growth structure of the coating for d ≤ dc. According to this hypothesis, the surface energy of the polymeric substrates is so low that the Volmer-Weber (island-coalescence) growth mode occurs. We have aimed to verify this explanation, that is, to study the initial phase of silicon-compound (SiO2 and SiN) growth on four different polymeric substrates, namely polyimide (KaptonRTM PI), polycarbonate (LexanRTM PC), polypropylene (PP), and polyethyleneterephthalate (MylarRTM PET). Three different deposition methods were used, namely reactive evaporation of SiO, radio-frequency (RF) Plasma Enhanced Chemical Vapor Deposition (RF PECVD), and Distributed Electron Cyclotron Resonance (DECR) PECVD. In this latter case, the substrates were placed in three different positions: (i) in the active glow zone, (ii) downstream, and (iii) downstream, but shielded from photon emission (e.g. VUV) from the plasma. Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS), Rutherford Backscattering Spectroscopy (RBS), and Scanning Electron Microscopy (SEM), the latter performed after Reactive Ion Etching (RIE) by oxygen plasma, revealed that growth indeed occurs in a Volmer-Weber mode in the case of evaporated films. The island coalescence was observed to occur at d = 1.2 nm, at which point the sticking coefficient of precursor species changes drastically. Finally, we have investigated the presence of an "interphase" between deposited coatings and the polymeric substrate. (Abstract shortened by UMI.)

Gold surface plasmon crystal structure based-on polystyrene template for biosensor application.

PubMed

Cheng, Min-Zhuo; Zhang, Jing; Bao, Dequan; Huang, Xiwei

2018-05-21

In this communication, we assembled ordered polystyrene (PS) microsphere array as a template with the drop-coating method, and the oxygen plasma was used to etch the template to adjust the spacing between the PS microspheres. Nano-triangular gold array and silver nano-pyramid array were obtained by ion beam sputtering to deposit precious metal gold and silver. We observed the surface morphology of Au and Au/Ag composite films by scanning electron microscope and characterized the films by X-ray diffraction and ultraviolet/visible light spectrophotometer. The results show that the etching time of oxygen plasma has an obvious effect in adjusting the spacing between PSs and has a significant effect on the morphology of Au structure. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chen; Gupta, Rahul; Pallem, Venkateswara

The authors report a systematic study aimed at evaluating the impact of molecular structure parameters of hydrofluorocarbon (HFC) precursors on plasma deposition of fluorocarbon (FC) films and etching performance of a representative ultra-low-k material, along with amorphous carbon. The precursor gases studied included fluorocarbon and hydrofluorocarbon gases whose molecular weights and chemical structures were systematically varied. Gases with three different degrees of unsaturation (DU) were examined. Trifluoromethane (CHF{sub 3}) is the only fully saturated gas that was tested. The gases with a DU value of one are 3,3,3-trifluoropropene (C{sub 3}H{sub 3}F{sub 3}), hexafluoropropene (C{sub 3}F{sub 6}), 1,1,3,3,3-pentafluoro-1-propene (C{sub 3}HF{sub 5}),more » (E)-1,2,3,3,3-pentafluoropropene (C{sub 3}HF{sub 5} isomer), heptafluoropropyl trifluorovinyl ether (C{sub 5}F{sub 10}O), octafluorocyclobutane (C{sub 4}F{sub 8}), and octafluoro-2-butene (C{sub 4}F{sub 8} isomer). The gases with a DU value of two includes hexafluoro-1,3-butadiene (C{sub 4}F{sub 6}), hexafluoro-2-butyne (C{sub 4}F{sub 6} isomer), octafluorocyclopentene (C{sub 5}F{sub 8}), and decafluorocyclohexene (C{sub 6}F{sub 10}). The work was performed in a dual frequency capacitively coupled plasma reactor. Real-time characterization of deposition and etching was performed using in situ ellipsometry, and optical emission spectroscopy was used for characterization of CF{sub 2} radicals in the gas phase. The chemical composition of the deposited FC films was examined by x-ray photoelectron spectroscopy. The authors found that the CF{sub 2} fraction, defined as the number of CF{sub 2} groups in a precursor molecule divided by the total number of carbon atoms in the molecule, determines the CF{sub 2} optical emission intensity of the plasma. CF{sub 2} optical emission, however, is not the dominant factor that determines HFC film deposition rates. Rather, HFC film deposition rates are determined by the number of weak bonds in the precursor molecule, which include a ring structure, C=C, C≡C, and C–H bonds. These bonds are broken preferentially in the plasma, and/or at the surface and fragments arriving at the substrate surface presumably provide dangling bonds that efficiently bond to the substrate or other fragments. Upon application of a radio-frequency bias to the substrate, substrate etching is induced. Highly polymerizing gases show decreased substrate etching rates as compared to HFC gases characterized by a lower HFC film deposition rate. This can be explained by a competition between deposition and etching reactions, and an increased energy and etchant dissipation in relatively thicker steady state FC films that form on the substrate surface. Deposited HFC films exhibit typically a high CF{sub 2} density at the film surface, which correlates with both the CF{sub 2} fractions in the precursor molecular structure and the deposition rate. The FC films deposited using hydrogen-containing precursors show higher degrees of crosslinking and lower F/C ratios than precursors without hydrogen, and exhibit a lower etch rate of substrate material. A small gap structure that blocks direct ion bombardment was used to simulate the sidewall plasma environment of a feature and was employed for in situ ellipsometry measurements. It is shown that highly polymerizing precursors with a DU of two enable protection of low-k sidewalls during plasma exposure from oxygen-related damage by protective film deposition. Dielectric film modifications are seen for precursors with a lower DU.« less

High density circuit technology, part 3

NASA Technical Reports Server (NTRS)

Wade, T. E.

1982-01-01

Dry processing - both etching and deposition - and present/future trends in semiconductor technology are discussed. In addition to a description of the basic apparatus, terminology, advantages, glow discharge phenomena, gas-surface chemistries, and key operational parameters for both dry etching and plasma deposition processes, a comprehensive survey of dry processing equipment (via vendor listing) is also included. The following topics are also discussed: fine-line photolithography, low-temperature processing, packaging for dense VLSI die, the role of integrated optics, and VLSI and technology innovations.

Effect of etching parameters on antireflection properties of Si subwavelength grating structures for solar cell applications

NASA Astrophysics Data System (ADS)

Leem, J. W.; Song, Y. M.; Lee, Y. T.; Yu, J. S.

2010-09-01

Silicon (Si) subwavelength grating (SWG) structures were fabricated on Si substrates by holographic lithography and subsequent inductively coupled plasma (ICP) etching process using SiCl4 with or without Ar addition for solar cell applications. To ensure a good nanosized pattern transfer into the underlying Si layer, the etch selectivity of Si over the photoresist mask is optimized by varying the etching parameters, thus improving antireflection characteristics. For antireflection analysis of Si SWG surfaces, the optical reflectivity is measured experimentally and it is also calculated theoretically by a rigorous coupled-wave analysis. The reflectance depends on the height, period, and shape of two-dimensional periodic Si subwavelength structures, correlated with ICP etching parameters. The optimized Si SWG structure exhibits a dramatic decrease in optical reflection of the Si surface over a wide angle of incident light ( θ i ), i.e. less than 5% at wavelengths of 300-1100 nm, leading to good wide-angle antireflection characteristics (i.e. solar-weighted reflection of 1.7-4.9% at θ i <50°) of Si solar cells.

RIES - Rijnland Internet Election System: A Cursory Study of Published Source Code

NASA Astrophysics Data System (ADS)

Gonggrijp, Rop; Hengeveld, Willem-Jan; Hotting, Eelco; Schmidt, Sebastian; Weidemann, Frederik

The Rijnland Internet Election System (RIES) is a system designed for voting in public elections over the internet. A rather cursory scan of the source code to RIES showed a significant lack of security-awareness among the programmers which - among other things - appears to have left RIES vulnerable to near-trivial attacks. If it had not been for independent studies finding problems, RIES would have been used in the 2008 Water Board elections, possibly handling a million votes or more. While RIES was more extensively studied to find cryptographic shortcomings, our work shows that more down-to-earth secure design practices can be at least as important, and the aspects need to be examined much sooner than right before an election.

Synthesis of Diamond Nanoplatelets/Carbon Nanowalls on Graphite Substrate by MPCVD

NASA Astrophysics Data System (ADS)

Zhang, Wei; Lyu, Jilei; Lin, Xiaoqi; Zhu, Jinfeng; Man, Weidong; Jiang, Nan

2015-07-01

The films composed of carbon nanowalls and diamond nanoplatelets, respectively, can be simultaneously formed on graphite substrate by controlling the hydrogen etching rate during microwave plasma chemical vapor deposition. To modulate the etching rate, two kinds of substrate design were used: a bare graphite plate and a graphite groove covered with a single crystal diamond sheet. After deposition at 1200°C for 3 hours, we find that dense diamond nanoplatelets were grown on the bare graphite, whereas carbon nanowalls were formed on the grooved surface, indicating that not only reaction temperature but also etching behavior is a key factor for nanostructure formation. supported by the Public Welfare Technology Application Projects of Zhejiang Province, China (No. 2013C33G3220012)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gray, D.C.; Tepermeister, I.; Sawin, H.H.

A multiple beam apparatus has been constructed to facilitate the study of ion-enhanced fluorine chemistry on undoped polysilicon and silicon dioxide surfaces by allowing the fluxes of fluorine (F) atoms and argon (Ar{sup +}) ions to be independently varied over several orders of magnitude. The chemical nature of the etching surfaces has been investigated following the vacuum transfer of the sample dies to an adjoining x-ray photoelectron spectroscopy facility. The etching {open_quotes}enhancement{close_quotes} effect of normally incident Ar{sup +} ions has been quantified over a wide range of ion energy through the use of Kaufman and electron cyclotron resonance-type ion sources.more » The increase in per ion etching yield of fluorine saturated silicon and silicon dioxide surfaces with increasing ion energy (E{sub ion}) was found to scale as (E{sub ion}{sup 1/2}-E{sub th}{sup 1/2}), where E{sub th} is the etching threshold energy for the process. Simple near-surface site occupation models have been proposed for the quantification of the ion-enhanced etching kinetics in these systems. Acceptable agreement has been found in comparison of these Ar{sup +}/F etching model predictions with similar Ar{sup +}/XeF{sub 2} studies reported in the literature, as well as with etching rate measurements made in F-based plasmas of gases such as SF{sub 6} and NF{sub 3}. 69 refs., 12 figs., 6 tabs.« less

Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Kuo, Meng-Wei

Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350°C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.

Simulation of MEMS for the Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Mott, Brent; Kuhn, Jonathan; Broduer, Steve (Technical Monitor)

2001-01-01

The NASA Goddard Space Flight Center (GSFC) is developing optical micro-electromechanical system (MEMS) components for potential application in Next Generation Space Telescope (NGST) science instruments. In this work, we present an overview of the electro-mechanical simulation of three MEMS components for NGST, which include a reflective micro-mirror array and transmissive microshutter array for aperture control for a near infrared (NIR) multi-object spectrometer and a large aperture MEMS Fabry-Perot tunable filter for a NIR wide field camera. In all cases the device must operate at cryogenic temperatures with low power consumption and low, complementary metal oxide semiconductor (CMOS) compatible, voltages. The goal of our simulation efforts is to adequately predict both the performance and the reliability of the devices during ground handling, launch, and operation to prevent failures late in the development process and during flight. This goal requires detailed modeling and validation of complex electro-thermal-mechanical interactions and very large non-linear deformations, often involving surface contact. Various parameters such as spatial dimensions and device response are often difficult to measure reliably at these small scales. In addition, these devices are fabricated from a wide variety of materials including surface micro-machined aluminum, reactive ion etched (RIE) silicon nitride, and deep reactive ion etched (DRIE) bulk single crystal silicon. The above broad set of conditions combine to be a formidable challenge for space flight qualification analysis. These simulations represent NASA/GSFC's first attempts at implementing a comprehensive strategy to address complex MEMS structures.

TiO2 micro-flowers composed of nanotubes and their application to dye-sensitized solar cells.

PubMed

Kim, Woong-Rae; Park, Hun; Choi, Won-Youl

2014-02-24

TiO2 micro-flowers were made to bloom on Ti foil by the anodic oxidation of Ti-protruding dots with a cylindrical shape. Arrays of the Ti-protruding dots were prepared by photolithography, which consisted of coating the photoresists, attaching a patterned mask, illuminating with UV light, etching the Ti surface by reactive ion etching (RIE), and stripping the photoresist on the Ti foil. The procedure for the blooming of the TiO2 micro-flowers was analyzed by field emission scanning electron microscopy (FESEM) as the anodizing time was increased. Photoelectrodes of dye-sensitized solar cells (DSCs) were fabricated using TiO2 micro-flowers. Bare TiO2 nanotube arrays were used for reference samples. The short-circuit current (Jsc) and the power conversion efficiency of the DSCs based on the TiO2 micro-flowers were 4.340 mA/cm2 and 1.517%, respectively. These values of DSCs based on TiO2 micro-flowers were higher than those of bare samples. The TiO2 micro-flowers had a larger surface area for dye adsorption compared to bare TiO2 nanotube arrays, resulting in improved Jsc characteristics. The structure of the TiO2 micro-flowers allowed it to adsorb dyes very effectively, also demonstrating the potential to achieve higher power conversion efficiency levels for DSCs compared to a bare TiO2 nanotube array structure and the conventional TiO2 nanoparticle structure.

TiO2 micro-flowers composed of nanotubes and their application to dye-sensitized solar cells

PubMed Central

2014-01-01

TiO2 micro-flowers were made to bloom on Ti foil by the anodic oxidation of Ti-protruding dots with a cylindrical shape. Arrays of the Ti-protruding dots were prepared by photolithography, which consisted of coating the photoresists, attaching a patterned mask, illuminating with UV light, etching the Ti surface by reactive ion etching (RIE), and stripping the photoresist on the Ti foil. The procedure for the blooming of the TiO2 micro-flowers was analyzed by field emission scanning electron microscopy (FESEM) as the anodizing time was increased. Photoelectrodes of dye-sensitized solar cells (DSCs) were fabricated using TiO2 micro-flowers. Bare TiO2 nanotube arrays were used for reference samples. The short-circuit current (Jsc) and the power conversion efficiency of the DSCs based on the TiO2 micro-flowers were 4.340 mA/cm2 and 1.517%, respectively. These values of DSCs based on TiO2 micro-flowers were higher than those of bare samples. The TiO2 micro-flowers had a larger surface area for dye adsorption compared to bare TiO2 nanotube arrays, resulting in improved Jsc characteristics. The structure of the TiO2 micro-flowers allowed it to adsorb dyes very effectively, also demonstrating the potential to achieve higher power conversion efficiency levels for DSCs compared to a bare TiO2 nanotube array structure and the conventional TiO2 nanoparticle structure. PMID:24565201

TiO2 micro-flowers composed of nanotubes and their application to dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Kim, Woong-Rae; Park, Hun; Choi, Won-Youl

2014-02-01

TiO2 micro-flowers were made to bloom on Ti foil by the anodic oxidation of Ti-protruding dots with a cylindrical shape. Arrays of the Ti-protruding dots were prepared by photolithography, which consisted of coating the photoresists, attaching a patterned mask, illuminating with UV light, etching the Ti surface by reactive ion etching (RIE), and stripping the photoresist on the Ti foil. The procedure for the blooming of the TiO2 micro-flowers was analyzed by field emission scanning electron microscopy (FESEM) as the anodizing time was increased. Photoelectrodes of dye-sensitized solar cells (DSCs) were fabricated using TiO2 micro-flowers. Bare TiO2 nanotube arrays were used for reference samples. The short-circuit current ( J sc) and the power conversion efficiency of the DSCs based on the TiO2 micro-flowers were 4.340 mA/cm2 and 1.517%, respectively. These values of DSCs based on TiO2 micro-flowers were higher than those of bare samples. The TiO2 micro-flowers had a larger surface area for dye adsorption compared to bare TiO2 nanotube arrays, resulting in improved J sc characteristics. The structure of the TiO2 micro-flowers allowed it to adsorb dyes very effectively, also demonstrating the potential to achieve higher power conversion efficiency levels for DSCs compared to a bare TiO2 nanotube array structure and the conventional TiO2 nanoparticle structure.

PULSION® HP: Tunable, High Productivity Plasma Doping

NASA Astrophysics Data System (ADS)

Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

2011-01-01

Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism—deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

Oxygen Plasma Treatment on 3D-Printed Chitosan/Gelatin/Hydroxyapatite Scaffolds for Bone Tissue Engineering.

PubMed

Lee, Chang-Min; Yang, Seong-Won; Jung, Sang-Chul; Kim, Byung-Hoon

2017-04-01

The 3D hydroxyapatite/gelatin/chitosan composite scaffolds were fabricated by 3D printing technique. The scaffolds were treated by oxygen plasma to improve the bioactivity and its surface characterization and in vitro cell culture were investigated. The scaffolds exhibited the good porosity and interconnectivity of pores. After oxygen plasma etching, roughness and wettability on the scaffolds surface are increased. Plasma treated scaffolds showed higher proliferation than that of untreated scaffolds. Oxygen plasma treatment could be used as potential tool to enhance the biocompatibility on the 3D composite scaffolds.

Polysilicon planarization and plug recess etching in a decoupled plasma source chamber using two endpoint techniques

NASA Astrophysics Data System (ADS)

Kaplita, George A.; Schmitz, Stefan; Ranade, Rajiv; Mathad, Gangadhara S.

1999-09-01

The planarization and recessing of polysilicon to form a plug are processes of increasing importance in silicon IC fabrication. While this technology has been developed and applied to DRAM technology using Trench Storage Capacitors, the need for such processes in other IC applications (i.e. polysilicon studs) has increased. Both planarization and recess processes usually have stringent requirements on etch rate, recess uniformity, and selectivity to underlying films. Additionally, both processes generally must be isotropic, yet must not expand any seams that might be present in the polysilicon fill. These processes should also be insensitive to changes in exposed silicon area (pattern factor) on the wafer. A SF6 plasma process in a polysilicon DPS (Decoupled Plasma Source) reactor has demonstrated the capability of achieving the above process requirements for both planarization and recess etch. The SF6 process in the decoupled plasma source reactor exhibited less sensitivity to pattern factor than in other types of reactors. Control of these planarization and recess processes requires two endpoint systems to work sequentially in the same recipe: one for monitoring the endpoint when blanket polysilicon (100% Si loading) is being planarized and one for monitoring the recess depth while the plug is being recessed (less than 10% Si loading). The planarization process employs an optical emission endpoint system (OES). An interferometric endpoint system (IEP), capable of monitoring lateral interference, is used for determining the recess depth. The ability of using either or both systems is required to make these plug processes manufacturable. Measuring the recess depth resulting from the recess process can be difficult, costly and time- consuming. An Atomic Force Microscope (AFM) can greatly alleviate these problems and can serve as a critical tool in the development of recess processes.

Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

NASA Astrophysics Data System (ADS)

Zakour, Sihem Ben; Taleb, Hassen

2017-09-01

Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

Microfluidic-based photocatalytic microreactor for environmental application: a review of fabrication substrates and techniques, and operating parameters.

PubMed

Das, Susmita; Srivastava, Vimal Chandra

2016-06-08

Photochemical technology with microfluidics is emerging as a new platform in environmental science. Microfluidic technology has various advantages, like better mixing and a shorter diffusion distance for the reactants and products; and uniform distribution of light on the photocatalyst. Depending on the material type and related applications, several fabrication techniques have been adopted by various researchers. Microreactors have been prepared by various techniques, such as lithography, etching, mechanical microcutting technology, etc. Lithography can be classified into photolithography, soft lithography and X-ray lithography techniques whereas the etching process is divided into wet etching (chemical etching) and dry etching (plasma etching) techniques. Several substrates, like polymers, such as polydimethyl-siloxane (PDMS), polymethyle-methacrylate (PMMA), hydrogel, etc.; metals, such as stainless steel, titanium foil, etc.; glass, such as silica capillary, glass slide, etc.; and ceramics have been used for microchannel fabrication. During degradation in a microreactor, the degradation efficiency is affected by few important parameters such as flow rate, initial concentration of the target compound, microreactor dimensions, light intensity, photocatalyst structure and catalyst support. The present paper discusses and critically reviews fabrication techniques and substrates used for microchannel fabrication and critical operating parameters for organics, especially dye degradation in the microreactor. The kinetics of degradation has also been discussed.

Laser-Induced Fluorescence Helps Diagnose Plasma Processes

NASA Technical Reports Server (NTRS)

Beattie, J. R.; Mattosian, J. N.; Gaeta, C. J.; Turley, R. S.; Williams, J. D.; Williamson, W. S.

1994-01-01

Technique developed to provide in situ monitoring of rates of ion sputter erosion of accelerator electrodes in ion thrusters also used for ground-based applications to monitor, calibrate, and otherwise diagnose plasma processes in fabrication of electronic and optical devices. Involves use of laser-induced-fluorescence measurements, which provide information on rates of ion etching, inferred rates of sputter deposition, and concentrations of contaminants.

Comparison of Langmuir probe and multipole resonance probe measurements in argon, hydrogen, nitrogen, and oxygen mixtures in a double ICP discharge

NASA Astrophysics Data System (ADS)

Fiebrandt, Marcel; Oberberg, Moritz; Awakowicz, Peter

2017-07-01

The results of a Multipole Resonance Probe (MRP) are compared to a Langmuir probe in measuring the electron density in Ar, H2, N2, and O2 mixtures. The MRP was designed for measurements in industry processes, i.e., coating or etching. To evaluate a possible influence on the MRP measurement due to molecular gases, different plasmas with increasing molecular gas content in a double inductively coupled plasma at 5 Pa and 10 Pa at 500 W are used. The determined electron densities from the MRP and the Langmuir probe slightly differ in H2 and N2 diluted argon plasmas, but diverge significantly with oxygen. In pure molecular gas plasmas, electron densities measured with the MRP are always higher than those measured with the Langmuir Probe, in particular, in oxygen containing mixtures. The differences can be attributed to etching of the tungsten wire in the Ar:O2 mixtures and rf distortion in the pure molecular discharges. The influence of a non-Maxwellian electron energy distribution function, negative ions or secondary electron emission seems to be of no or only minor importance.

Poly(cyclohexylethylene)- block -Poly(lactide) Oligomers for Ultrasmall Nanopatterning Using Atomic Layer Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, Li; Oquendo, Luis E.; Schulze, Morgan W.

2016-03-08

Poly(cyclohexylethylene)-block-poly(lactide) (PCHE–PLA) block polymers were synthesized through a combination of anionic polymerization, heterogeneous catalytic hydrogenation and controlled ring-opening polymerization. Ordered thin films of PCHE–PLA with ultrasmall hexagonally packed cylinders oriented perpendicularly to the substrate surface were prepared by spin-coating and subsequent solvent vapor annealing for use in two distinct templating strategies. In one approach, selective hydrolytic degradation of the PLA domains generated nanoporous PCHE templates with an average pore diameter of 5 ± 1 nm corroborated by atomic force microscopy and grazing incidence small-angle X-ray scattering. Alternatively, sequential infiltration synthesis (SIS) was employed to deposit Al2O3 selectively into the PLAmore » domains of PCHE–PLA thin films. A combination of argon ion milling and O2 reactive ion etching (RIE) enabled the replication of the Al2O3 nanoarray from the PCHE–PLA template on diverse substrates including silicon and gold with feature diameters less than 10 nm.« less

Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation.

PubMed

Buchholz, K; Tinazli, A; Kleefen, A; Dorfner, D; Pedone, D; Rant, U; Tampé, R; Abstreiter, G; Tornow, M

2008-11-05

We present the fabrication and characterization of nanopore microcavities for the investigation of transport processes in suspended lipid membranes. The cavities are situated below the surface of silicon-on-insulator (SOI) substrates. Single cavities and large area arrays were prepared using high resolution electron-beam lithography in combination with reactive ion etching (RIE) and wet chemical sacrificial underetching. The locally separated compartments have a circular shape and allow the enclosure of picoliter volume aqueous solutions. They are sealed at their top by a 250 nm thin Si membrane featuring pores with diameters from 2 µm down to 220 nm. The Si surface exhibits excellent smoothness and homogeneity as verified by AFM analysis. As biophysical test system we deposited lipid membranes by vesicle fusion, and demonstrated their fluid-like properties by fluorescence recovery after photobleaching. As clearly indicated by AFM measurements in aqueous buffer solution, intact lipid membranes successfully spanned the pores. The nanopore cavity arrays have potential applications in diagnostics and pharmaceutical research on transmembrane proteins.

Multistage Polymeric Lens Structures Integrated into Silica Waveguides

NASA Astrophysics Data System (ADS)

Tate, Atsushi; Suzuki, Takanori; Tsuda, Hiroyuki

2006-08-01

A waveguide lens, composed of multistage polymer-filled thin grooves in a silica planar lightwave circuit (PLC) is proposed and a low-loss structure has been designed. A waveguide lens in a silica slab waveguide has been fabricated using reactive ion etching (RIE) and formed by filling with polymer. Both an imagding optical system and a Fourier-transform optical system can be configured in a PLC using a waveguide lens. It renders the PLC functional and its design flexible. To obtain a shorter focal length with a low insertion loss, it is more effective to use a multistage lens structure. An imaging optical system and a Fourier-transform optical system with a focal length of less than 1000 μm were fabricated in silica waveguides using a multistage lens structure. The lens imaging waveguides incorporate a 16-24-stage lens, with insertion losses of 4-7 dB. A 4 × 4 optical coupler, using a Fourier-transform optical system, utilizes a 6-stage lens with losses of 2-4 dB.

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

PubMed Central

Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong

2018-01-01

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. PMID:29385759