Latest developments on EUV reticle and pellicle research and technology at TNO

NASA Astrophysics Data System (ADS)

Verberk, Rogier; Koster, Norbert; te Sligte, Edwin; Staring, Wilbert

2017-06-01

At TNO an extensive EUV optics life time program has been running for over 15 years together with our partners ASML and Carl Zeiss. This has contributed to the upcoming introduction of EUV High Volume Manufacturing (HVM). To further help the industry with the introduction of EUV, TNO has worked on extending their facilities with a number of reticle and pellicle research infrastructure facilities. In this paper we will show some of the facilities that are available at TNO and shortly introduce their capabilities. Recently we have opened our EBL2 facility, which is an EUV Beam Line (EBL2) meant for studying the effects of high power EUV illumination on optics, reticles and pellicles up to the power roadmap of 500 W at intermediate Focus (IF). This facility is open to users from all over the world and is beneficial for the industry in helping developing alternative capping layers and contamination control strategies for optics lifetime, new absorber materials, pellicles and resists. The EBL2 system has seen first light in December 2016 and is now in the final stage of acceptance testing and qualification. It is expected that the system will be fully operational in the third quarter of 2017, and available for users. It is possible to transfer reticles to and from the EBL2 by means of the reticle handler using the dual pod interface. This secures backside cleanliness to NXE standards and thus enables wafer printing on a NXE tool in a later stage after the exposures and inspection at EBL2. Besides EBL2, a high performance and ultra-clean reticle handler is available at TNO. This handler incorporates our particle scanner Rapid Nano 4 for front side inspection of reticle blanks with a detection limit down to 20 nm particles. Attached to the handler is also an Optical Coherence Tomography (OCT) inspection tool for back-side reticle or pellicle inspection with a resolution down to 1 micron.

Serendipitous EUV sources detected during the first year of the Extreme Ultraviolet Explorer right angle program

NASA Technical Reports Server (NTRS)

Mcdonald, K.; Craig, N.; Sirk, M. M.; Drake, J. J.; Fruscione, A.; Vallerga, J. V.; Malina, R. F.

1994-01-01

We report the detection of 114 extreme ultraviolet (EUV; 58 - 740 A) sources, of which 99 are new serendipitous sources, based on observations made with the imaging telescopes on board the Extreme Ultraviolet Explorer (EUVE) during the Right Angle Program (RAP). These data were obtained using the survey scanners and the Deep Survey instrument during the first year of the spectroscopic guest observer phase of the mission, from January 1993 to January 1994. The data set consists of 162 discrete pointings whose exposure times are typically two orders of magnitude longer than the average exposure times during the EUVE all-sky survey. Based on these results, we can expect that EUVE will serendipitously detect approximately 100 new EUV sources per year, or about one new EUV source per 10 sq deg, during the guest observer phase of the EUVE mission. New EUVE sources of note include one B star and three extragalactic objects. The B star (HR 2875, EUVE J0729 - 38.7) is detected in both the Lexan/B (approximately 100 A) and Al/Ti/C (approximately 200 A) bandpasses, and the detection is shown not to be a result of UV leaks. We suggest that we are detecting EUV and/or soft x rays from a companion to the B star. Three sources, EUVE J2132+10.1, EUVE J2343-14.9, and EUVE J2359-30.6 are identified as the active galactic nuclei MKN 1513, MS2340.9-1511, and 1H2354-315, respectively.

Mask technology for EUV lithography

NASA Astrophysics Data System (ADS)

Bujak, M.; Burkhart, Scott C.; Cerjan, Charles J.; Kearney, Patrick A.; Moore, Craig E.; Prisbrey, Shon T.; Sweeney, Donald W.; Tong, William M.; Vernon, Stephen P.; Walton, Christopher C.; Warrick, Abbie L.; Weber, Frank J.; Wedowski, Marco; Wilhelmsen, Karl C.; Bokor, Jeffrey; Jeong, Sungho; Cardinale, Gregory F.; Ray-Chaudhuri, Avijit K.; Stivers, Alan R.; Tejnil, Edita; Yan, Pei-yang; Hector, Scott D.; Nguyen, Khanh B.

1999-04-01

Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

NXE pellicle: offering a EUV pellicle solution to the industry

NASA Astrophysics Data System (ADS)

Brouns, Derk; Bendiksen, Aage; Broman, Par; Casimiri, Eric; Colsters, Paul; Delmastro, Peter; de Graaf, Dennis; Janssen, Paul; van de Kerkhof, Mark; Kramer, Ronald; Kruizinga, Matthias; Kuntzel, Henk; van der Meulen, Frits; Ockwell, David; Peter, Maria; Smith, Daniel; Verbrugge, Beatrijs; van de Weg, David; Wiley, Jim; Wojewoda, Noelie; Zoldesi, Carmen; van Zwol, Pieter

2016-03-01

Towards the end of 2014, ASML committed to provide a EUV pellicle solution to the industry. Last year, during SPIE Microlithography 2015, we introduced the NXE pellicle concept, a removable pellicle solution that is compatible with current and future patterned mask inspection methods. This paper shows results of how we took this concept to a complete EUV pellicle solution for the industry. We will highlight some technical design challenges we faced developing the NXE pellicle and how we solved them. We will also present imaging results of pellicle exposures on a 0.33 NA NXE scanner system. In conjunction with the NXE pellicle, we will also present the supporting tooling we have developed to enable pellicle use.

Film loss-free cleaning chemicals for EUV mask lifetime elongation developed through combinatorial chemical screening

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Kim, Jinsu; Lowe, Jeff; Dattilo, Davide; Koh, Soowan; Choi, Jun Yeol; Dietze, Uwe; Shoki, Tsutomu; Kim, Byung Gook; Jeon, Chan-Uk

2015-10-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. SPM (Sulfuric acid peroxide mixture) which has been extensively used for acid cleaning of photomask and wafer has serious drawback for EUV mask cleaning. It shows severe film loss of tantalum-based absorber layers and limited removal efficiency of EUV-generated carbon contaminants on EUV mask surface. Here, we introduce such novel cleaning chemicals developed for EUV mask as almost film loss free for various layers of the mask and superior carbon removal performance. Combinatorial chemical screening methods allowed us to screen several hundred combinations of various chemistries and additives under several different process conditions of temperature and time, eventually leading to development of the best chemistry selections for EUV mask cleaning. Recently, there have been many activities for the development of EUV pellicle, driven by ASML and core EUV scanner customer companies. It is still important to obtain film-loss free cleaning chemicals because cleaning cycle of EUV mask should be much faster than that of optic mask mainly due to EUV pellicle lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality changes and film losses during 50 cleaning cycles using new chemicals as well as particle and carbon contaminant removal characteristics. We have observed that the performance of new chemicals developed is superior to current SPM or relevant cleaning chemicals for EUV mask cleaning and EUV mask lifetime elongation.

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Bottiglieri, Gerardo; de Winter, Laurens; McNamara, John; Rusu, Paul; Lubkoll, Jan; Rispens, Gijsbert; van Schoot, Jan; Neumann, Jens Timo; Roesch, Matthias; Kneer, Bernhard

2017-10-01

To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore's law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

LPP-EUV light source for HVM lithography

NASA Astrophysics Data System (ADS)

Saito, T.; Ueno, Y.; Yabu, T.; Kurosawa, A.; Nagai, S.; Yanagida, T.; Hori, T.; Kawasuji, Y.; Abe, T.; Kodama, T.; Nakarai, H.; Yamazaki, T.; Mizoguchi, H.

2017-01-01

We have been developing a laser produced plasma extremely ultra violet (LPP-EUV) light source for a high volume manufacturing (HVM) semiconductor lithography. It has several unique technologies such as the high power short pulse carbon dioxide (CO2) laser, the short wavelength solid-state pre-pulse laser and the debris mitigation technology with the magnetic field. This paper presents the key technologies for a high power LPP-EUV light source. We also show the latest performance data which is 188W EUV power at intermediate focus (IF) point with 3.7% conversion efficiency (CE) at 100 kHz.

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform

NASA Astrophysics Data System (ADS)

Bekaert, Joost; Di Lorenzo, Paolo; Mao, Ming; Decoster, Stefan; Larivière, Stéphane; Franke, Joern-Holger; Blanco Carballo, Victor M.; Kutrzeba Kotowska, Bogumila; Lazzarino, Frederic; Gallagher, Emily; Hendrickx, Eric; Leray, Philippe; Kim, R. Ryoung-han; McIntyre, Greg; Colsters, Paul; Wittebrood, Friso; van Dijk, Joep; Maslow, Mark; Timoshkov, Vadim; Kiers, Ton

2017-03-01

The imec N7 (iN7) platform has been developed to evaluate EUV patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent M2 layer. With these pitches, the iN7 node is an `aggressive' full-scaled N7, corresponding to IDM N7, or foundry N5. Even in a 1D design style, single exposure of the 16 nm half-pitch M2 layer is very challenging for EUV lithography, because of its tight tip-to-tip configurations. Therefore, the industry is considering the hybrid use of ArFi-based SAQP combined with EUV Block as an alternative to EUV single exposure. As a consequence, the EUV Block layer may be one of the first layers to adopt EUV lithography in HVM. In this paper, we report on the imec iN7 SAQP + Block litho performance and process integration, targeting the M2 patterning for a 7.5 track logic design. The Block layer is exposed on an ASML NXE:3300 EUV-scanner at imec, using optimized illumination conditions and state-of-the-art metal-containing negative tone resist (Inpria). Subsequently, the SAQP and block structures are characterized in a morphological study, assessing pattern fidelity and CD/EPE variability. The work is an experimental feasibility study of EUV insertion, for SAQP + Block M2 patterning on an industry-relevant N5 use-case.

Aerial imaging technology for photomask qualification: from a microscope to a metrology tool

NASA Astrophysics Data System (ADS)

Garetto, Anthony; Scherübl, Thomas; Peters, Jan Hendrik

2012-09-01

Photomasks carry the structured information of the chip designs printed with lithography scanners onto wafers. These structures, for the most modern technologies, are enlarged by a factor of 4 with respect to the final circuit design, and 20-60 of these photomasks are needed for the production of a single completed chip used, for example, in computers or cell phones. Lately, designs have been reported to be on the drawing board with close to 100 of these layers. Each of these photomasks will be reproduced onto the wafer several hundred times and typically 5000-50 000 wafers will be produced with each of them. Hence, the photomasks need to be absolutely defect-free to avoid any fatal electrical shortcut in the design or drastic performance degradation. One well-known method in the semiconductor industry is to analyze the aerial image of the photomask in a dedicated tool referred to as Aerial Imaging Measurement System, which emulates the behavior of the respective lithography scanner used for the imaging of the mask. High-end lithography scanners use light with a wavelength of 193 nm and high numerical apertures (NAs) of 1.35 utilizing a water film between the last lens and the resist to be illuminated (immersion scanners). Complex illumination shapes enable the imaging of structures well below the wavelength used. Future lithography scanners will work at a wavelength of 13.5 nm [extreme ultraviolet (EUV)] and require the optical system to work with mirrors in vacuum instead of the classical lenses used in current systems. The exact behavior of these systems is emulated by the Aerial Image Measurement System (AIMS™; a Trademark of Carl Zeiss). With these systems, any position of the photomask can be imaged under the same illumination condition used by the scanners, and hence, a prediction of the printing behavior of any structure can be derived. This system is used by mask manufacturers in their process flow to review critical defects or verify defect repair success. In this paper, we give a short introduction into the lithography roadmap driving the development cycles of the AIMS systems focusing primarily on the complexity of the structures to be reviewed. Second, we describe the basic principle of the AIMS technology and how it is used. The last section is dedicated to the development of the latest generation of the AIMS for EUV, which is cofinanced by several semiconductor companies in order to close a major gap in the mask manufacturing infrastructure and the challenges to be met.

Honing the accuracy of extreme-ultraviolet optical system testing: at-wavelength and visible-light measurements of the ETS Set-2 projection optic

NASA Astrophysics Data System (ADS)

Goldberg, Kenneth A.; Naulleau, Patrick P.; Bokor, Jeffrey; Chapman, Henry N.

2002-07-01

As the quality of optical systems for extreme ultraviolet lithography improves, high-accuracy wavefront metrology for alignment and qualification becomes ever more important. To enable the development of diffraction-limited EUV projection optics, visible-light and EUV interferometries must work in close collaboration. We present a detailed comparison of EUV and visible-light wavefront measurements performed across the field of view of a lithographic-quality EUV projection optical system designed for use in the Engineering Test Stand developed by the Virtual National Laboratory and the EUV Limited Liability Company. The comparisons reveal that the present level of RMS agreement lies in the 0.3-0.4-nm range. Astigmatism is the most significant aberration component for the alignment of this optical system; it is also the dominant term in the discrepancy, and the aberration with the highest measurement uncertainty. With EUV optical systems requiring total wavefront quality in the (lambda) EUV/50 range, and even higher surface-figure quality for the individual mirror elements, improved accuracy through future comparisons, and additional studies, are required.

Multi-trigger resist patterning with ASML NXE3300 EUV scanner

NASA Astrophysics Data System (ADS)

Vesters, Yannick; McClelland, Alexandra; De Simone, Danilo; Popescu, Carmen; Dawson, Guy; Roth, John; Theis, Wolfgang; Vandenberghe, Geert; Robinson, Alex P. G.

2018-03-01

Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The Multi Trigger Resist (MTR) is a negative tone crosslinking resist that does not need a post exposure bake (PEB), and during the past years, has been mainly tested using interference lithography at PSI. In this study, we present the results that have been obtained using MTR resists, performing EUV exposures on ASML NXE3300B EUV scanner at IMEC. We present the lithography performance of the MTR1 resist series in two formulations - a high-speed baseline, and a formulation designed to enhance the multi-trigger behaviour. Additionally, we present results for the MTR2 resist series, which has been designed for lower line edge roughness. The high-speed baseline resist (MTR1), showed 18 nm resolution at 20mJ/cm2. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm2, giving a LER of 3.7 nm. Performance across multiple process conditions are discussed. We performed etch rate measurement and the multi-trigger resist showed etch resistance equivalent or better than standard chemically amplified resist. This could compensate for the lower film thickness required to avoid pattern collapse at pitch 32nm.

The lithographer's dilemma: shrinking without breaking the bank

NASA Astrophysics Data System (ADS)

Levinson, Harry J.

2013-10-01

It can no longer be assumed that the lithographic scaling which has previously driven Moore's Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.

Extreme Ultraviolet Explorer. Long look at the next window

NASA Technical Reports Server (NTRS)

Maran, Stephen P.

1991-01-01

The Extreme Ultraviolet Explorer (EUVE) will map the entire sky to determine the existence, direction, brightness, and temperature of thousands of objects that are sources of so-called extreme ultraviolet (EUV) radiation. The EUV spectral region is located between the x-ray and ultraviolet regions of the electromagnetic spectrum. From the sky survey by EUVE, astronomers will determine the nature of sources of EUV light in our galaxy, and infer the distribution of interstellar gas for hundreds of light years around the solar system. It is from this gas and the accompanying dust in space that new stars and solar systems are born and to which evolving and dying stars return much of their material in an endless cosmic cycle of birth, death, and rebirth. Besides surveying the sky, astronomers will make detailed studies of selected objects with EUVE to determine their physical properties and chemical compositions. Also, they will learn about the conditions that prevail and the processes at work in stars, planets, and other sources of EUV radiation, maybe even quasars. The EUVE mission and instruments are described. The objects that EUVE will likely find are described.

Intense X-ray and EUV light source

DOEpatents

Coleman, Joshua; Ekdahl, Carl; Oertel, John

2017-06-20

An intense X-ray or EUV light source may be driven by the Smith-Purcell effect. The intense light source may utilize intense electron beams and Bragg crystals. This may allow the intense light source to range from the extreme UV range up to the hard X-ray range.

The future of EUV lithography: enabling Moore's Law in the next decade

NASA Astrophysics Data System (ADS)

Pirati, Alberto; van Schoot, Jan; Troost, Kars; van Ballegoij, Rob; Krabbendam, Peter; Stoeldraijer, Judon; Loopstra, Erik; Benschop, Jos; Finders, Jo; Meiling, Hans; van Setten, Eelco; Mika, Niclas; Dredonx, Jeannot; Stamm, Uwe; Kneer, Bernhard; Thuering, Bernd; Kaiser, Winfried; Heil, Tilmann; Migura, Sascha

2017-03-01

While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their development activities on a EUV exposure tool with Numerical Aperture greater than 0.5. The purpose of this scanner, targeting a resolution of 8nm, is to extend Moore's law throughout the next decade. A novel, anamorphic lens design, has been developed to provide the required Numerical Aperture; this lens will be paired with new, faster stages and more accurate sensors enabling Moore's law economical requirements, as well as the tight focus and overlay control needed for future process nodes. The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling, and possibly in the metrology concepts. Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution. This paper presents an overview of the key technology innovations and infrastructure requirements for the next generation EUV systems.

Challenges of anamorphic high-NA lithography and mask making

NASA Astrophysics Data System (ADS)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10.1117/12.2086074). To ensure no assist feature printing, the assist feature sizes need to be scaled with λ/NA. The extremely small SRAF width (below 25 nm on the reticle) is difficult to fabricate across the full reticle. In this paper, we introduce an innovative `attenuated SRAF' to improve SRAF manufacturability and still maintain the process window benefit. A new mask fabrication process is proposed to use existing mask-making capability to manufacture the attenuated SRAFs. The high-NA EUV system utilizes anamorphic reduction; 4× in the horizontal (slit) direction and 8× in the vertical (scanning) direction (J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150; B. Kneer, S. Migura, W. Kaiser, J. T. Neumann, J. van Schoot, in `Proc. SPIE9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94221G (2015) doi: 10.1117/12.2175488). For an anamorphic system, the magnification has an angular dependency, and thus, familiar mask specifications such as mask error factor (MEF) need to be redefined. Similarly, mask-manufacturing rule check (MRC) needs to consider feature orientation.

The novel top-coat material for RLS trade-off reduction in EUVL

NASA Astrophysics Data System (ADS)

Onishi, Ryuji; Sakamoto, Rikimaru; Fujitani, Noriaki; Endo, Takafumi; Ho, Bang-ching

2012-03-01

For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. In EUV light source development, low power is one of the critical issue because of the low throughput, and another issue is Out of Band (OoB) light existing in EUV light. OoB is concerned to be the cause of deterioration for the lithography performance. In order to avoid this critical issue, we focused on development of the resist top coat material with OoB absorption property as Out of Band Protection Layer (OBPL). We designed this material having high absorbance around 240nm wavelength and high transmittance for EUV light. And this material aimed to improve sensitivity, resolution and LWR performance.

Monolithic pattern-sensitive detector

DOEpatents

Berger, Kurt W.

2000-01-01

Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

Considerations for pattern placement error correction toward 5nm node

NASA Astrophysics Data System (ADS)

Yaegashi, Hidetami; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Koike, Kyohei; Maslow, Mark John; Timoshkov, Vadim; Kiers, Ton; Di Lorenzo, Paolo; Fonseca, Carlos

2017-03-01

Multi-patterning has been adopted widely in high volume manufacturing as 193 immersion extension, and it becomes realistic solution of nano-order scaling. In fact, it must be key technology on single directional (1D) layout design [1] for logic devise and it becomes a major option for further scaling technique in SAQP. The requirement for patterning fidelity control is getting savior more and more, stochastic fluctuation as well as LER (Line edge roughness) has to be micro-scopic observation aria. In our previous work, such atomic order controllability was viable in complemented technique with etching and deposition [2]. Overlay issue form major potion in yield management, therefore, entire solution is needed keenly including alignment accuracy on scanner and detectability on overlay measurement instruments. As EPE (Edge placement error) was defined as the gap between design pattern and contouring of actual pattern edge, pattern registration in single process level must be considerable. The complementary patterning to fabricate 1D layout actually mitigates any process restrictions, however, multiple process step, symbolized as LELE with 193-i, is burden to yield management and affordability. Recent progress of EUV technology is remarkable, and it is major potential solution for such complicated technical issues. EUV has robust resolution limit and it must be definitely strong scaling driver for process simplification. On the other hand, its stochastic variation such like shot noise due to light source power must be resolved with any additional complemented technique. In this work, we examined the nano-order CD and profile control on EUV resist pattern and would introduce excellent accomplishments.

Extreme ultra-violet movie camera for imaging microsecond time scale magnetic reconnection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chai, Kil-Byoung; Bellan, Paul M.

2013-12-15

An ultra-fast extreme ultra-violet (EUV) movie camera has been developed for imaging magnetic reconnection in the Caltech spheromak/astrophysical jet experiment. The camera consists of a broadband Mo:Si multilayer mirror, a fast decaying YAG:Ce scintillator, a visible light block, and a high-speed visible light CCD camera. The camera can capture EUV images as fast as 3.3 × 10{sup 6} frames per second with 0.5 cm spatial resolution. The spectral range is from 20 eV to 60 eV. EUV images reveal strong, transient, highly localized bursts of EUV radiation when magnetic reconnection occurs.

High-NA EUV lithography enabling Moore's law in the next decade

NASA Astrophysics Data System (ADS)

van Schoot, Jan; Troost, Kars; Bornebroek, Frank; van Ballegoij, Rob; Lok, Sjoerd; Krabbendam, Peter; Stoeldraijer, Judon; Loopstra, Erik; Benschop, Jos P.; Finders, Jo; Meiling, Hans; van Setten, Eelco; Kneer, Bernhard; Kuerz, Peter; Kaiser, Winfried; Heil, Tilmann; Migura, Sascha; Neumann, Jens Timo

2017-10-01

While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their activities on a EUV exposure tool with Numerical Aperture of 0.55. The purpose of this scanner, targeting an ultimate resolution of 8nm, is to extend Moore's law throughout the next decade. A novel, anamorphic lens design, capable of providing the required Numerical Aperture has been investigated; This lens will be paired with new, faster stages and more accurate sensors enabling Moore's law economical requirements, as well as the tight focus and overlay control needed for future process nodes. The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling. Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution. This paper presents an overview of the target specifications, key technology innovations and imaging simulations demonstrating the advantages as compared to 0.33NA and showing the capabilities of the next generation EUV systems.

EUV process establishment through litho and etch for N7 node

NASA Astrophysics Data System (ADS)

Kuwahara, Yuhei; Kawakami, Shinichiro; Kubota, Minoru; Matsunaga, Koichi; Nafus, Kathleen; Foubert, Philippe; Mao, Ming

2016-03-01

Extreme ultraviolet lithography (EUVL) technology is steadily reaching high volume manufacturing for 16nm half pitch node and beyond. However, some challenges, for example scanner availability and resist performance (resolution, CD uniformity (CDU), LWR, etch behavior and so on) are remaining. Advance EUV patterning on the ASML NXE:3300/ CLEAN TRACK LITHIUS Pro Z- EUV litho cluster is launched at imec, allowing for finer pitch patterns for L/S and CH. Tokyo Electron Ltd. and imec are continuously collabo rating to develop manufacturing quality POR processes for NXE:3300. TEL's technologies to enhance CDU, defectivity and LWR/LER can improve patterning performance. The patterning is characterized and optimized in both litho and etch for a more complete understanding of the final patterning performance. This paper reports on post-litho CDU improvement by litho process optimization and also post-etch LWR reduction by litho and etch process optimization.

Free-electron laser emission architecture impact on extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Hosler, Erik R.; Wood, Obert R.; Barletta, William A.

2017-10-01

Laser-produced plasma (LPP) EUV sources have demonstrated ˜125 W at customer sites, establishing confidence in EUV lithography (EUVL) as a viable manufacturing technology. However, for extension to the 3-nm technology node and beyond, existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half-field exposures) and/or EUV multipatterning (requiring increased wafer throughput proportional to the number of exposure passes). Both development paths will require a substantial increase in EUV source power to maintain the economic viability of the technology, creating an opportunity for free-electron laser (FEL) EUV sources. FEL-based EUV sources offer an economic, high-power/single-source alternative to LPP EUV sources. Should FELs become the preferred next-generation EUV source, the choice of FEL emission architecture will greatly affect its operational stability and overall capability. A near-term industrialized FEL is expected to utilize one of the following three existing emission architectures: (1) self-amplified spontaneous emission, (2) regenerative amplifier, or (3) self-seeding. Model accelerator parameters are put forward to evaluate the impact of emission architecture on FEL output. Then, variations in the parameter space are applied to assess the potential impact to lithography operations, thereby establishing component sensitivity. The operating range of various accelerator components is discussed based on current accelerator performance demonstrated at various scientific user facilities. Finally, comparison of the performance between the model accelerator parameters and the variation in parameter space provides a means to evaluate the potential emission architectures. A scorecard is presented to facilitate this evaluation and provides a framework for future FEL design and enablement for EUVL applications.

Universal EUV in-band intensity detector

DOEpatents

Berger, Kurt W.

2004-08-24

Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

Development of a EUV Test Facility at the Marshall Space Flight Center

NASA Technical Reports Server (NTRS)

West, Edward; Pavelitz, Steve; Kobayashi, Ken; Robinson, Brian; Cirtain, Johnathan; Gaskin, Jessica; Winebarger, Amy

2011-01-01

This paper will describe a new EUV test facility that is being developed at the Marshall Space Flight Center (MSFC) to test EUV telescopes. Two flight programs, HiC - high resolution coronal imager (sounding rocket) and SUVI - Solar Ultraviolet Imager (GOES-R), set the requirements for this new facility. This paper will discuss those requirements, the EUV source characteristics, the wavelength resolution that is expected and the vacuum chambers (Stray Light Facility, Xray Calibration Facility and the EUV test chamber) where this facility will be used.

High-space resolution imaging plate analysis of extreme ultraviolet (EUV) light from tin laser-produced plasmas

NASA Astrophysics Data System (ADS)

Musgrave, Christopher S. A.; Murakami, Takehiro; Ugomori, Teruyuki; Yoshida, Kensuke; Fujioka, Shinsuke; Nishimura, Hiroaki; Atarashi, Hironori; Iyoda, Tomokazu; Nagai, Keiji

2017-03-01

With the advent of high volume manufacturing capabilities by extreme ultraviolet lithography, constant improvements in light source design and cost-efficiency are required. Currently, light intensity and conversion efficiency (CE) measurments are obtained by charged couple devices, faraday cups etc, but also phoshpor imaging plates (IPs) (BaFBr:Eu). IPs are sensitive to light and high-energy species, which is ideal for studying extreme ultraviolet (EUV) light from laser produced plasmas (LPPs). In this work, we used IPs to observe a large angular distribution (10°-90°). We ablated a tin target by high-energy lasers (1064 nm Nd:YAG, 1010 and 1011 W/cm2) to generate the EUV light. The europium ions in the IP were trapped in a higher energy state from exposure to EUV light and high-energy species. The light intensity was angular dependent; therefore excitation of the IP depends on the angle, and so highly informative about the LPP. We obtained high-space resolution (345 μm, 0.2°) angular distribution and grazing spectrometer (5-20 nm grate) data simultaneously at different target to IP distances (103 mm and 200 mm). Two laser systems and IP types (BAS-TR and BAS-SR) were also compared. The cosine fitting values from the IP data were used to calculate the CE to be 1.6% (SD ± 0.2) at 13.5 nm 2% bandwidth. Finally, a practical assessment of IPs and a damage issue are disclosed.

EUV wavefront metrology system in EUVA

NASA Astrophysics Data System (ADS)

Hasegawa, Takayuki; Ouchi, Chidane; Hasegawa, Masanobu; Kato, Seima; Suzuki, Akiyoshi; Sugisaki, Katsumi; Murakami, Katsuhiko; Saito, Jun; Niibe, Masahito

2004-05-01

An Experimental extreme ultraviolet (EUV) interferometer (EEI) using an undulator as a light source was installed in New SUBARU synchrotron facility at Himeji Institute of Technology (HIT). The EEI can evaluate the five metrology methods reported before. (1) A purpose of the EEI is to determine the most suitable method for measuring the projection optics of EUV lithography systems for mass production tools.

Compact and Light-Weight Solar Spaceflight Instrument Designs Utilizing Newly Developed Miniature Free-Standing Zone Plates: EUV Radiometer and Limb-Scanning Monochromator

NASA Astrophysics Data System (ADS)

Seely, J. F.; McMullin, D. R.; Bremer, J.; Chang, C.; Sakdinawat, A.; Jones, A. R.; Vest, R.

2014-12-01

Two solar instrument designs are presented that utilize newly developed miniature free-standing zone plates having interconnected Au opaque bars and no support membrane resulting in excellent long-term stability in space. Both instruments are based on a zone plate having 4 mm outer diameter and 1 to 2 degree field of view. The zone plate collects EUV radiation and focuses a narrow bandpass through a pinhole aperture and onto a silicon photodiode detector. As a miniature radiometer, EUV irradiance is accurately determined from the zone plate efficiency and the photodiode responsivity that are calibrated at the NIST SURF synchrotron facility. The EUV radiometer is pointed to the Sun and measures the absolute solar EUV irradiance in high time cadence suitable for solar physics and space weather applications. As a limb-scanning instrument in low earth orbit, a miniature zone-plate monochromator measures the extinction of solar EUV radiation by scattering through the upper atmosphere which is a measure of the variability of the ionosphere. Both instruments are compact and light-weight and are attractive for CubeSats and other missions where resources are extremely limited.

EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development.

PubMed

Gaballah, A E H; Nicolosi, P; Ahmed, Nadeem; Jimenez, K; Pettinari, G; Gerardino, A; Zuppella, P

2018-01-01

The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.

Performance of 100-W HVM LPP-EUV source

NASA Astrophysics Data System (ADS)

Mizoguchi, Hakaru; Nakarai, Hiroaki; Abe, Tamotsu; Nowak, Krzysztof M.; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Hori, Tsukasa; Kodama, Takeshi; Shiraishi, Yutaka; Yanagida, Tatsuya; Soumagne, Georg; Yamada, Tsuyoshi; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi

2015-08-01

At Gigaphoton Inc., we have developed unique and original technologies for a carbon dioxide laser-produced tin plasma extreme ultraviolet (CO2-Sn-LPP EUV) light source, which is the most promising solution for high-power high-volume manufacturing (HVM) EUV lithography at 13.5 nm. Our unique technologies include the combination of a pulsed CO2 laser with Sn droplets, the application of dual-wavelength laser pulses for Sn droplet conditioning, and subsequent EUV generation and magnetic field mitigation. Theoretical and experimental data have clearly shown the advantage of our proposed strategy. Currently, we are developing the first HVM light source, `GL200E'. This HVM light source will provide 250-W EUV power based on a 20-kW level pulsed CO2 laser. The preparation of a high average-power CO2 laser (more than 20 kW output power) has been completed in cooperation with Mitsubishi Electric Corporation. Recently, we achieved 140 W at 50 kHz and 50% duty cycle operation as well as 2 h of operation at 100 W of power level. Further improvements are ongoing. We will report the latest status and the challenge to reach stable system operation of more than 100 W at about 4% conversion efficiency with 20-μm droplets and magnetic mitigation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chilese, Francis C.; Torczynski, John R.; Garcia, Rudy

An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatusmore » may have A) a low pressure gas with a heat control unit thermally coupled to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.« less

Nanoplasmonic generation of ultrashort EUV pulses

NASA Astrophysics Data System (ADS)

Choi, Joonhee; Lee, Dong-Hyub; Han, Seunghwoi; Park, In-Yong; Kim, Seungchul; Kim, Seung-Woo

2012-10-01

Ultrashort extreme-ultraviolet (EUV) light pulses are an important tool for time-resolved pump-probe spectroscopy to investigate the ultrafast dynamics of electrons in atoms and molecules. Among several methods available to generate ultrashort EUV light pulses, the nonlinear frequency upconversion process of high-harmonic generation (HHG) draws attention as it is capable of producing coherent EUV pulses with precise control of burst timing with respect to the driving near-infrared (NIR) femtosecond laser. In this report, we present and discuss our recent experimental data obtained by the plasmon-driven HHG method that generate EUV radiation by means of plasmonic nano-focusing of NIR femtosecond pulses. For experiment, metallic waveguides having a tapered hole of funnel shape inside were fabricated by adopting the focused-ion-beam process on a micro-cantilever substrate. The plasmonic field formed within the funnelwaveguides being coupled with the incident femtosecond pulse permitted intensity enhancement by a factor of ~350, which creates a hot spot of sub-wavelength size with intensities strong enough for HHG. Experimental results showed that with injection of noble gases into the funnel-waveguides, EUV radiation is generated up to wavelengths of 32 nm and 29.6 nm from Ar and Ne gas atoms, respectively. Further, it was observed that lower-order EUV harmonics are cut off in the HHG spectra by the tiny exit aperture of the funnel-waveguide.

Studies on cryogenic Xe capillary jet target for laser-produced plasma EUV-light source

NASA Astrophysics Data System (ADS)

Inoue, T.; Nica, P. E.; Kaku, K.; Shimoura, A.; Amano, S.; Miyamoto, S.; Mochizuki, T.

2006-03-01

In this paper, characterizations of a cryogenic Xe capillary jet target for a laser-produced plasma extreme ultraviolet (EUV) light source are reported. The capillary jet target is a candidate of fast-supplying targets for mitigating debris generation and target consumption in a vacuum chamber without reducing the EUV conversion efficiency. Xe capillary jets (jet velocity ~ 0.4 m/s) were generated in vacuum by using annular nozzles chilled to ~ 170 K at a Xe backing pressure of ~ 0.7 MPa. Forming mechanisms of the capillary jet targets were studied by using numerical calculations. Furthermore, laser-produced plasma EUV generation was performed by irradiating a Nd:YAG laser (1064 nm, ~ 0.5 J, 10 ns, 120 μmφ, ~ 4×10 11 W/cm2) on a Xe capillary jet target (outer / inner diameter = 100 / 70 μmφ). The angular distribution of EUV generation was approximately uniform around the Xe capillary jet target, and the peak kinetic energy of the fast-ions was evaluated to be ~ 2 keV.

EUV multilayer coatings for the Atmospheric Imaging Assembly instrument aboard the Solar Dynamics Observatory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soufli, R; Windt, D L; Robinson, J C

2006-02-09

Multilayer coatings for the 7 EUV channels of the AIA have been developed and completed successfully on all AIA flight mirrors. Mo/Si coatings (131, 171, 193.5, 211 {angstrom}) were deposited at Lawrence Livermore National Laboratory (LLNL). Mg/SiC (304, 335 {angstrom}) and Mo/Y (94 {angstrom}) coatings were deposited at Columbia University. EUV reflectance of the 131/335 {angstrom}, 171 {angstrom}, 193.5/211 {angstrom} primary and secondary flight mirrors and the 94/304 {angstrom} secondary flight mirror was measured at beamline 6.3.2. of the Advanced Light Source (ALS) at LBNL. EUV reflectance of the 94/304 {angstrom} primary and secondary flight mirrors was measured at beamlinemore » X24C of the National Synchrotron Light Source (NSLS) at Brookhaven National Lab. Preliminary EUV reflectance measurements of the 94, 304 and 335 {angstrom} coatings were performed with a laser plasma source reflectometer located at Columbia University. Prior to multilayer coating, Atomic Force Microscopy (AFM) characterization and cleaning of all flight substrates was performed at LLNL.« less

Plasma-based EUV light source

DOEpatents

Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

2010-11-02

Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

Carbon dioxide gas purification and analytical measurement for leading edge 193nm lithography

NASA Astrophysics Data System (ADS)

Riddle Vogt, Sarah; Landoni, Cristian; Applegarth, Chuck; Browning, Matt; Succi, Marco; Pirola, Simona; Macchi, Giorgio

2015-03-01

The use of purified carbon dioxide (CO2) has become a reality for leading edge 193 nm immersion lithography scanners. Traditionally, both dry and immersion 193 nm lithographic processes have constantly purged the optics stack with ultrahigh purity compressed dry air (UHPCDA). CO2 has been utilized for a similar purpose as UHPCDA. Airborne molecular contamniation (AMC) purification technologies and analytical measurement methods have been extensively developed to support the Lithography Tool Manufacturers purity requirements. This paper covers the analytical tests and characterizations carried out to assess impurity removal from 3.0 N CO2 (beverage grade) for its final utilization in 193 nm and EUV scanners.

Stability and imaging of the ASML EUV alpha demo tool

NASA Astrophysics Data System (ADS)

Hermans, Jan V.; Baudemprez, Bart; Lorusso, Gian; Hendrickx, Eric; van Dijk, Andre; Jonckheere, Rik; Goethals, Anne-Marie

2009-03-01

Extreme Ultra-Violet (EUV) lithography is the leading candidate for semiconductor manufacturing of the 22nm technology node and beyond, due to the very short wavelength of 13.5nm. However, reducing the wavelength adds complexity to the lithographic process. The impact of the EUV specific conditions on lithographic performance needs to be understood, before bringing EUV lithography into pre-production. To provide early learning on EUV, an EUV fullfield scanner, the Alpha Demo Tool (ADT) from ASML was installed at IMEC, using a Numerical Aperture (NA) of 0.25. In this paper we report on different aspects of the ADT: the imaging and overlay performance and both short and long-term stability. For 40nm dense Lines-Spaces (LS), the ADT shows an across field overlapping process window of 270nm Depth Of Focus (DOF) at 10% Exposure Latitude (EL) and a wafer CD Uniformity (CDU) of 3nm 3σ, without any corrections for process or reticle. The wafer CDU is correlated to different factors that are known to influence the CD fingerprint from traditional lithography: slit intensity uniformity, focus plane deviation and reticle CD error. Taking these contributions into account, the CD through slit fingerprint for 40nm LS is simulated with excellent agreement to experimental data. The ADT shows good CD stability over 9 months of operation, both intrafield and across wafer. The projection optics reflectivity has not degraded over 9 months. Measured overlay performance with respect to a dry tool shows |Mean|+3σ below 20nm with more correction potential by applying field-by-field corrections (|Mean|+3σ <=10nm). For 22nm SRAM application, both contact hole and metal layer were printed in EUV with 10% CD and 15nm overlay control. Below 40nm, the ADT shows good wafer CDU for 30nm dense and isolated lines (on the same wafer) and 38nm dense Contact Holes (CH). First 28nm dense line CDU data are achieved. The results indicate that the ADT can be used effectively for EUV process development before installation of the pre-production tool, the ASML NXE Gen. 1 at IMEC.

Controlling contamination in Mo/Si multilayer mirrors by Si surface capping modifications

NASA Astrophysics Data System (ADS)

Malinowski, Michael E.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.; Mrowka, Stanley; Soufli, Regina

2002-07-01

The performance of Mo/Si multilayer mirrors (MLMs) used to reflect UV (EUV) radiation in an EUV + hydrocarbon (NC) vapor environment can be improved by optimizing the silicon capping layer thickness on the MLM in order to minimize the initial buildup of carbon on MLMs. Carbon buildup is undesirable since it can absorb EUV radiation and reduce MLM reflectivity. A set of Mo/Si MLMs deposited on Si wafers was fabricated such that each MLM had a different Si capping layer thickness ranging form 2 nm to 7 nm. Samples from each MLM wafer were exposed to a combination of EUV light + (HC) vapors at the Advanced Light Source (ALS) synchrotron in order to determine if the Si capping layer thickness affected the carbon buildup on the MLMs. It was found that the capping layer thickness had a major influence on this 'carbonizing' tendency, with the 3 nm layer thickness providing the best initial resistance to carbonizing and accompanying EUV reflectivity loss in the MLM. The Si capping layer thickness deposited on a typical EUV optic is 4.3 nm. Measurements of the absolute reflectivities performed on the Calibration and Standards beamline at the ALS indicated the EUV reflectivity of the 3 nm-capped MLM was actually slightly higher than that of the normal, 4 nm Si-capped sample. These results show that he use of a 3 nm capping layer represents an improvement over the 4 nm layer since the 3 nm has both a higher absolute reflectivity and better initial resistance to carbon buildup. The results also support the general concept of minimizing the electric field intensity at the MLM surface to minimize photoelectron production and, correspondingly, carbon buildup in a EUV + HC vapor environment.

Debris- and radiation-induced damage effects on EUV nanolithography source collector mirror optics performance

NASA Astrophysics Data System (ADS)

Allain, J. P.; Nieto, M.; Hendricks, M.; Harilal, S. S.; Hassanein, A.

2007-05-01

Exposure of collector mirrors facing the hot, dense pinch plasma in plasma-based EUV light sources to debris (fast ions, neutrals, off-band radiation, droplets) remains one of the highest critical issues of source component lifetime and commercial feasibility of nanolithography at 13.5-nm. Typical radiators used at 13.5-nm include Xe and Sn. Fast particles emerging from the pinch region of the lamp are known to induce serious damage to nearby collector mirrors. Candidate collector configurations include either multi-layer mirrors (MLM) or single-layer mirrors (SLM) used at grazing incidence. Studies at Argonne have focused on understanding the underlying mechanisms that hinder collector mirror performance at 13.5-nm under fast Sn or Xe exposure. This is possible by a new state-of-the-art in-situ EUV reflectometry system that measures real time relative EUV reflectivity (15-degree incidence and 13.5-nm) variation during fast particle exposure. Intense EUV light and off-band radiation is also known to contribute to mirror damage. For example offband radiation can couple to the mirror and induce heating affecting the mirror's surface properties. In addition, intense EUV light can partially photo-ionize background gas (e.g., Ar or He) used for mitigation in the source device. This can lead to local weakly ionized plasma creating a sheath and accelerating charged gas particles to the mirror surface and inducing sputtering. In this paper we study several aspects of debris and radiation-induced damage to candidate EUVL source collector optics materials. The first study concerns the use of IMD simulations to study the effect of surface roughness on EUV reflectivity. The second studies the effect of fast particles on MLM reflectivity at 13.5-nm. And lastly the third studies the effect of multiple energetic sources with thermal Sn on 13.5-nm reflectivity. These studies focus on conditions that simulate the EUVL source environment in a controlled way.

The Nearest Neutron Stars

NASA Technical Reports Server (NTRS)

Halpern, Jules P.

1996-01-01

Extreme Ultraviolet Explorer (EUVE) satellite observations of the Pulsar PSR J0437-4715, the Seyfert Galaxy RX J0437.4-4711, and the Geminga Pulsar are reported on. The main purpose of the PSR J0437-4715 investigation was to examine its soft X-ray flux. The 20 day EUVE observation of RX J0437.4-4711 constitutes a uniformly sampled soft X-ray light curve of a highly variable Seyfert galaxy whose power spectrum can be examined on timescales from 3 hrs. to several days. A unique aspect of the EUVE observation of RX J0437.4-4711 is its long light curve which we have used to measure the power spectrum of soft X-ray variability at low frequencies. Approximately 2100 counts were detected for the Geminga pulsar in a period of 251,000 s by the EUVE Deep Survey instrument. Geminga presents an unusually difficult problem because its multicomponent X-ray spectrum and pulse profile are indicative of a complex distribution of surface emission, and possibly a contribution from nonthermal emission as well.

Ultimate waveform reproducibility of extreme-ultraviolet pulses by high-harmonic generation in quartz

NASA Astrophysics Data System (ADS)

Garg, M.; Kim, H. Y.; Goulielmakis, E.

2018-05-01

Optical waveforms of light reproducible with subcycle precision underlie applications of lasers in ultrafast spectroscopies, quantum control of matter and light-based signal processing. Nonlinear upconversion of optical pulses via high-harmonic generation in gas media extends these capabilities to the extreme ultraviolet (EUV). However, the waveform reproducibility of the generated EUV pulses in gases is inherently sensitive to intensity and phase fluctuations of the driving field. We used photoelectron interferometry to study the effects of intensity and carrier-envelope phase of an intense single-cycle optical pulse on the field waveform of EUV pulses generated in quartz nanofilms, and contrasted the results with those obtained in gas argon. The EUV waveforms generated in quartz were found to be virtually immune to the intensity and phase of the driving field, implying a non-recollisional character of the underlying emission mechanism. Waveform-sensitive photonic applications and precision measurements of fundamental processes in optics will benefit from these findings.

Molecular organometallic resists for EUV (MORE): Reactivity as a function of metal center (Bi, Sb, Te and Sn)

NASA Astrophysics Data System (ADS)

Sitterly, Jacob; Murphy, Michael; Grzeskowiak, Steven; Denbeaux, Greg; Brainard, Robert L.

2018-03-01

This paper describes the photoreactivity of six organometallic complexes of the type PhnMX2 containing bismuth, antimony and tellurium, where n = 3 for bismuth and antimony and n = 2 for tellurium, and where X = acetate (O2CCH3) or pivalate (O2CC(CH3)3). These compounds were exposed to EUV light to monitor photodecomposition via in situ mass spectral analysis of the primary outgassing products of CO2, benzene and phenol. This paper explores the effect of metal center and carboxylate ligand on the EUV reactivity of these EUV photoresists.

Global Energetics in Solar Flares and Coronal Mass Ejections

NASA Astrophysics Data System (ADS)

Aschwanden, Markus J.

2017-08-01

We present a statistical study of the energetics of coronal mass ejections (CME) and compare it with the magnetic, thermal, and nonthermal energy dissipated in flares. The physical parameters of CME speeds, mass, and kinetic energies are determined with two different independent methods, i.e., the traditional white-light scattering method using LASCO/SOHO data, and the EUV dimming method using AIA/SDO data. We analyze all 860 GOES M- and X-class flare events observed during the first 7 years (2010-2016) of the SDO mission. The new ingredients of our CME modeling includes: (1) CME geometry in terms of a self-similar adiabatic expansion, (2) DEM analysis of CME mass over entire coronal temperature range, (3) deceleration of CME due to gravity force which controls the kinetic and potentail CME energy as a function of time, (4) the critical speed that controls eruptive and confined CMEs, (5) the relationship between the center-of-mass motion during EUV dimming and the leading edge motion observed in white-light coronagraphs. Novel results are: (1) Physical parameters obtained from both the EUV dimming and white-light method can be reconciled; (2) the equi-partition of CME kinetic and thermal flare energy; (3) the Rosner-Tucker-Vaiana scaling law. We find that the two methods in EUV and white-light wavelengths are highly complementary and yield more complete models than each method alone.

An EUV Study of the Eclipsing M-Dwarf Binary System YY GEM

NASA Technical Reports Server (NTRS)

Drake, Jeremy

2000-01-01

EUVE, SW, MW and LW spectra have been reduced and line fluxes measured. The Deep Survey data has been analyzed and light curves have been derived. The spectra around the HE II 304 region show some evidence of emission from the bright A companion star, Castor. Preliminary results for the metallicity of the corona of YY Gem were derived from the EUVE spectra and photometry and were presented at the AAS HEAD meeting; results are being finalized for publication in a referred journal.

Increasing EUV source efficiency via recycling of radiation power

NASA Astrophysics Data System (ADS)

Hassanein, Ahmed; Sizyuk, Valeryi; Sizyuk, Tatyana; Johnson, Kenneth C.

2018-03-01

EUV source power is critical for advanced lithography, for achieving economical throughput performance and also for minimizing stochastic patterning effects. Power conversion efficiency can be increased by recycling plasma-scattered laser radiation and other out-of-band radiation back to the plasma via retroreflective optics. Radiation both within and outside of the collector light path can potentially be recycled. For recycling within the collector path, the system uses a diffractive collection mirror that concomitantly filters all laser and out-of-band radiation out of the EUV output. In this paper we review the optical design concept for power recycling and present preliminary plasma-physics simulation results showing a potential gain of 60% in EUV conversion efficiency.

Classification and printability of EUV mask defects from SEM images

NASA Astrophysics Data System (ADS)

Cho, Wonil; Price, Daniel; Morgan, Paul A.; Rost, Daniel; Satake, Masaki; Tolani, Vikram L.

2017-10-01

Classification and Printability of EUV Mask Defects from SEM images EUV lithography is starting to show more promise for patterning some critical layers at 5nm technology node and beyond. However, there still are many key technical obstacles to overcome before bringing EUV Lithography into high volume manufacturing (HVM). One of the greatest obstacles is manufacturing defect-free masks. For pattern defect inspections in the mask-shop, cutting-edge 193nm optical inspection tools have been used so far due to lacking any e-beam mask inspection (EBMI) or EUV actinic pattern inspection (API) tools. The main issue with current 193nm inspection tools is the limited resolution for mask dimensions targeted for EUV patterning. The theoretical resolution limit for 193nm mask inspection tools is about 60nm HP on masks, which means that main feature sizes on EUV masks will be well beyond the practical resolution of 193nm inspection tools. Nevertheless, 193nm inspection tools with various illumination conditions that maximize defect sensitivity and/or main-pattern modulation are being explored for initial EUV defect detection. Due to the generally low signal-to-noise in the 193nm inspection imaging at EUV patterning dimensions, these inspections often result in hundreds and thousands of defects which then need to be accurately reviewed and dispositioned. Manually reviewing each defect is difficult due to poor resolution. In addition, the lack of a reliable aerial dispositioning system makes it very challenging to disposition for printability. In this paper, we present the use of SEM images of EUV masks for higher resolution review and disposition of defects. In this approach, most of the defects detected by the 193nm inspection tools are first imaged on a mask SEM tool. These images together with the corresponding post-OPC design clips are provided to KLA-Tencor's Reticle Decision Center (RDC) platform which provides ADC (Automated Defect Classification) and S2A (SEM-to-Aerial printability) analysis of every defect. First, a defect-free or reference mask SEM is rendered from the post-OPC design, and the defective signature is detected from the defect-reference difference image. These signatures help assess the true nature of the defect as evident in e-beam imaging; for example, excess or missing absorber, line-edge roughness, contamination, etc. Next, defect and reference contours are extracted from the grayscale SEM images and fed into the simulation engine with an EUV scanner model to generate corresponding EUV defect and reference aerial images. These are then analyzed for printability and dispositioned using an Aerial Image Analyzer (AIA) application to automatically measure and determine the amount of CD errors. Thus by integrating EUV ADC and S2A applications together, every defect detection is characterized for its type and printability which is essential for not only determining which defects to repair, but also in monitoring the performance of EUV mask process tools. The accuracy of the S2A print modeling has been verified with other commercially-available simulators, and will also be verified with actual wafer print results. With EUV lithography progressing towards volume manufacturing at 5nm technology, and the likelihood of EBMI inspectors approaching the horizon, the EUV ADC-S2A system will continue serving an essential role of dispositioning defects off e-beam imaging.

Telescope with a wide field of view internal optical scanner

NASA Technical Reports Server (NTRS)

Zheng, Yunhui (Inventor); Degnan, III, John James (Inventor)

2012-01-01

A telescope with internal scanner utilizing either a single optical wedge scanner or a dual optical wedge scanner and a controller arranged to control a synchronous rotation of the first and/or second optical wedges, the wedges constructed and arranged to scan light redirected by topological surfaces and/or volumetric scatterers. The telescope with internal scanner further incorporates a first converging optical element that receives the redirected light and transmits the redirected light to the scanner, and a second converging optical element within the light path between the first optical element and the scanner arranged to reduce an area of impact on the scanner of the beam collected by the first optical element.

A New Relationship Between Soft X-Rays and EUV Flare Light Curves

NASA Astrophysics Data System (ADS)

Thiemann, Edward

2016-05-01

Solar flares are the result of magnetic reconnection in the solar corona which converts magnetic energy into kinetic energy resulting in the rapid heating of solar plasma. As this plasma cools, it emits radiation at different EUV wavelengths when the dropping temperature passes a line’s temperature of formation. This results in a delay in the emissions from cooler EUV lines relative to hotter EUV lines. Therefore, characterizing how this hot plasma cools is important for understanding how the corresponding geo-effective extreme ultraviolet (EUV) irradiance evolves in time. I present a simple new framework in which to study flare cooling by using a Lumped Element Thermal Model (LETM). LETM is frequently used in science and engineering to simplify a complex multi-dimensional thermal system by reducing it to a 0-D thermal circuit. For example, a structure that conducts heat out of a system is simplified with a resistive element and a structure that allows a system to store heat is simplified with a capacitive element. A major advantage of LETM is that the specific geometry of a system can be ignored, allowing for an intuitive analysis of the major thermal processes. I show that LETM is able to accurately reproduce the temporal evolution of cooler flare emission lines based on hotter emission line evolution. In particular, it can be used to predict the evolution of EUV flare light curves using the NOAA X-Ray Sensor (XRS).

Imaging performance and challenges of 10nm and 7nm logic nodes with 0.33 NA EUV

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Schiffelers, Guido; Psara, Eleni; Oorschot, Dorothe; Davydova, Natalia; Finders, Jo; Depre, Laurent; Farys, Vincent

2014-10-01

The NXE:3300B is ASML's third generation EUV system and has an NA of 0.33 and is positioned at a resolution of 22nm, which can be extended down to 18nm and below with off-axis illumination at full transmission. Multiple systems have been qualified and installed at customers. The NXE:3300B succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience. It is expected that EUV will be adopted first for critical Logic layers at 10nm and 7nm nodes, such as Metal-1, to avoid the complexity of triple patterning schemes using ArF immersion. In this paper we will evaluate the imaging performance of (sub-)10nm node Logic M1 on the NXE:3300B EUV scanner. We will show the line-end performance of tip-to-tip and tip-to-space test features for various pitches and illumination settings and the performance enhancement obtained by means of a 1st round of OPC. We will also show the magnitude of local variations. The Logic M1 cell is evaluated at various critical features to identify hot spots. A 2nd round OPC model was calibrated of which we will show the model accuracy and ability to predict hot spots in the Logic M1 cell. The calibrated OPC model is used to predict the expected performance at 7nm node Logic using off-axis illumination at 16nm minimum half pitch. Initial results of L/S exposed on the NXE:3300B at 7nm node resolutions will be shown. An outlook is given to future 0.33 NA systems on the ASML roadmap with enhanced illuminator capabilities to further improve performance and process window.

Negative-tone imaging with EUV exposure toward 13nm hp

NASA Astrophysics Data System (ADS)

Tsubaki, Hideaki; Nihashi, Wataru; Tsuchihashi, Toru; Yamamoto, Kei; Goto, Takahiro

2016-03-01

Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using a specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm2. Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm2 by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm2 to 24 mJ/cm2. On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photo-acid generator (PAG) and polymer. Conventional EUV absorber comprises of organic compounds is expected to have 1.6 times higher EUV absorption than polyhydroxystyrene based on calculation. However, observed value of acid amount was comparable or significantly worse than polyhydroxystyrene.

Methods and apparatus for cleaning objects in a chamber of an optical instrument by generating reactive ions using photon radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klebanoff, Leonard E.; Delgado, Gildardo R.; Hollenshead, Jeromy T.

An optical instrument, including a chamber, an object exposed to an interior of the chamber, a source of low-pressure gas, the gas comprising at least one of low-pressure molecular hydrogen gas, low-pressure molecular oxygen and a low-pressure noble gas, the source of low pressure gas being fluidly coupled to the chamber, a low voltage source electrically coupled between the object and a remaining portion of the instrument that is exposed to the interior of the chamber so as to maintain the object at a low voltage relative to the remaining portion, and an EUV/VUV light source adapted to direct EUV/VUVmore » light through the low pressure gas in the chamber onto the object. In such a system, when the EUV/VUV light source is activated ions of the low-pressure gas are formed and directed to the object. The ions may be ions of Hydrogen, Oxygen or a noble gas.« less

A double-stream Xe:He jet plasma emission in the vicinity of 6.7 nm

NASA Astrophysics Data System (ADS)

Chkhalo, N. I.; Garakhin, S. A.; Golubev, S. V.; Lopatin, A. Ya.; Nechay, A. N.; Pestov, A. E.; Salashchenko, N. N.; Toropov, M. N.; Tsybin, N. N.; Vodopyanov, A. V.; Yulin, S.

2018-05-01

We present the results of investigations of extreme ultraviolet (EUV) light emission in the range from 5 to 10 nm. The light source was a pulsed "double-stream" Xe:He gas jet target irradiated by a laser beam with a power density of ˜1011 W/cm2. The radiation spectra were measured with a Czerny-Turner monochromator with a plane diffraction grating. The conversion efficiency of the laser energy into EUV radiation caused by Xe+14…+16 ion emission in the range of 6-8 nm was measured using a calibrated power meter. The conversion efficiency of the laser radiation into EUV in the vicinity of 6.7 nm was (2.17 ± 0.13)% in a 1 nm spectral band. In the spectral band of the real optical system (0.7% for La/B multilayer mirrors) emitted into the half-space, it was (0.1 ± 0.006)%. The results of this study provide an impetus for further research on laser plasma sources for maskless EUV lithography at a wavelength of 6.7 nm.

EUV spectroscopy of highly charged high Z ions in the Large Helical Device plasmas

NASA Astrophysics Data System (ADS)

Suzuki, C.; Koike, F.; Murakami, I.; Tamura, N.; Sudo, S.; Sakaue, H. A.; Nakamura, N.; Morita, S.; Goto, M.; Kato, D.; Nakano, T.; Higashiguchi, T.; Harte, C. S.; OʼSullivan, G.

2014-11-01

We present recent results on the extreme ultraviolet (EUV) spectroscopy of highly charged high Z ions in plasmas produced in the Large Helical Device (LHD) at the National Institute for Fusion Science. Tungsten, bismuth and lanthanide elements have recently been studied in the LHD in terms of their importance in fusion research and EUV light source development. In relatively low temperature plasmas, quasicontinuum emissions from open 4d or 4f subshell ions are predominant in the EUV region, while the spectra tend to be dominated by discrete lines from open 4s or 4p subshell ions in higher temperature plasmas. Comparative analyses using theoretical calculations and charge-separated spectra observed in an electron beam ion trap have been performed to achieve better agreement with the spectra measured in the LHD. As a result, databases on Z dependence of EUV spectra in plasmas have been widely extended.

Study of extreme-ultraviolet emission and properties of a coronal streamer from PROBA2/SWAP, HINODE/EIS and Mauna Loa Mk4 observations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goryaev, F.; Slemzin, V.; Vainshtein, L.

2014-02-01

Wide-field extreme-ultraviolet (EUV) telescopes imaging in spectral bands sensitive to 1 MK plasma on the Sun often observe extended, ray-like coronal structures stretching radially from active regions to distances of 1.5-2 R {sub ☉}, which represent the EUV counterparts of white-light streamers. To explain this phenomenon, we investigated the properties of a streamer observed on 2010 October 20 and 21, by the PROBA2/SWAP EUV telescope together with the Hinode/EIS (HOP 165) and the Mauna Loa Mk4 white-light coronagraph. In the SWAP 174 Å band comprising the Fe IX-Fe XI lines, the streamer was detected to a distance of 2 Rmore » {sub ☉}. We assume that the EUV emission is dominated by collisional excitation and resonant scattering of monochromatic radiation coming from the underlying corona. Below 1.2 R {sub ☉}, the plasma density and temperature were derived from the Hinode/EIS data by a line-ratio method. Plasma conditions in the streamer and in the background corona above 1.2 R {sub ☉} from the disk center were determined by forward-modeling the emission that best fit the observational data in both EUV and white light. It was found that the plasma in the streamer above 1.2 R {sub ☉} is nearly isothermal, with a temperature of T = 1.43 ± 0.08 MK. The hydrostatic scale-height temperature determined from the evaluated density distribution was significantly higher (1.72 ± 0.08 MK), which suggests the existence of outward plasma flow along the streamer. We conclude that, inside the streamer, collisional excitation provided more than 90% of the observed EUV emission, whereas, in the background corona, the contribution of resonance scattering became comparable with that of collisions at R ≳ 2 R {sub ☉}.« less

Mask-induced aberration in EUV lithography

NASA Astrophysics Data System (ADS)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Use of molecular oxygen to reduce EUV-induced carbon contamination of optics

NASA Astrophysics Data System (ADS)

Malinowski, Michael E.; Grunow, Philip A.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.

2001-08-01

Carbon deposition and removal experiments on Mo/Si multilayer mirror (MLM) samples were performed using extreme ultraviolet (EUV) light on Beamline 12.0.1.2 of the Advanced Light Source, Lawrence Berkeley National Laboratory (LBNL). Carbon (C) was deposited onto Mo/Si multilayer mirror (MLM) samples when hydrocarbon vapors where intentionally introduced into the MLM test chamber in the presence of EUV at 13.44 nm (92.3eV). The carbon deposits so formed were removed by molecular oxygen + EUV. The MLM reflectivities and photoemission were measured in-situ during these carbon deposition and cleaning procedures. Auger Electron Spectroscopy (AES) sputter-through profiling of the samples was performed after experimental runs to help determine C layer thickness and the near-surface compositional-depth profiles of all samples studied. EUV powers were varied from ~0.2mW/mm2 to 3mW/mm2(at 13.44 nm) during both deposition and cleaning experiments and the oxygen pressure ranged from ~5x10-5 to 5x10-4 Torr during the cleaning experiments. C deposition rates as high as ~8nm/hr were observed, while cleaning rates as high as ~5nm/hr could be achieved when the highest oxygen pressure were used. A limited set of experiments involving intentional oxygen-only exposure of the MLM samples showed that slow oxidation of the MLM surface could occur.

Microbiological studies on the radiation environment of the ionosphere and stratosphere.

PubMed

Petras, E; Bisa, K

1968-01-01

Rocket, balloon and laboratory experiments have been performed in order to study the survival chances of microorganisms, which exist under the environmental conditions of ionosphere and stratosphere. The main results are: 1. Not only near the earth, but also in the stratosphere and even in the ionosphere, microorganisms are endangered primarily by UV- and EUV-light irradiation. 2. The observed effect of more penetrating kinds of radiation was relatively unimportant. High-vacuum and temperature effects have not been observed at all. Even membrane filters and thin protein layers protected the exposed spores of Bacillus subtilis var. niger (= Bac. globigii) in a clear-cut manner. 3. UV-light with a wavelength between 200 and 300 nm reduces the number of cells able to divide much quicker, than EUV-light of the same energy level does, but damages caused by EUV-light can not be reversed by photoreactivation. 4. Microbes which have been damaged by solar radiation, can be photoreactivated to a degree. Photoreactivation is high after exposure near the Earth and significant after exposure within the stratosphere. 5. After exposure to ionospheric irradiations no changes in the antigenic behavior of E. coli cells could be detected.

Integrated approach to improving local CD uniformity in EUV patterning

NASA Astrophysics Data System (ADS)

Liang, Andrew; Hermans, Jan; Tran, Timothy; Viatkina, Katja; Liang, Chen-Wei; Ward, Brandon; Chuang, Steven; Yu, Jengyi; Harm, Greg; Vandereyken, Jelle; Rio, David; Kubis, Michael; Tan, Samantha; Dusa, Mircea; Singhal, Akhil; van Schravendijk, Bart; Dixit, Girish; Shamma, Nader

2017-03-01

Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies. Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development. Illumination conditions in EUV lithography were optimized to improve normalized image log slope (NILS), which is expected to reduce shot noise related effects. It can be seen that the EUV imaging contrast improvement can further reduce post-develop LCDU from 4.1 nm to 3.9 nm and from 2.8 nm to 2.6 nm. In parallel, etch processes were developed to further reduce LCDU, to control CD, and to transfer these improvements into the final target substrate. We also demonstrate that increasing post-develop CD through dose adjustment can enhance the LCDU reduction from etch. Similar trends were also observed in different pitches down to 40 nm. The solutions demonstrated here are critical to the introduction of EUV lithography in high volume manufacturing. It can be seen that through a synergistic deposition, lithography, and etch optimization, LCDU at a 40 nm pitch can be improved to 1.6 nm (3-sigma) in a target oxide layer and to 1.4 nm (3-sigma) at the photoresist layer.

Extreme Ultraviolet Fractional Orbital Angular Momentum Beams from High Harmonic Generation

PubMed Central

Turpin, Alex; Rego, Laura; Picón, Antonio; San Román, Julio; Hernández-García, Carlos

2017-01-01

We investigate theoretically the generation of extreme-ultraviolet (EUV) beams carrying fractional orbital angular momentum. To this end, we drive high-order harmonic generation with infrared conical refraction (CR) beams. We show that the high-order harmonic beams emitted in the EUV/soft x-ray regime preserve the characteristic signatures of the driving beam, namely ringlike transverse intensity profile and CR-like polarization distribution. As a result, through orbital and spin angular momentum conservation, harmonic beams are emitted with fractional orbital angular momentum, and they can be synthesized into structured attosecond helical beams –or “structured attosecond light springs”– with rotating linear polarization along the azimuth. Our proposal overcomes the state of the art limitations for the generation of light beams far from the visible domain carrying non-integer orbital angular momentum and could be applied in fields such as diffraction imaging, EUV lithography, particle trapping, and super-resolution imaging. PMID:28281655

DUV or EUV: that is the question

NASA Astrophysics Data System (ADS)

Williamson, David M.

2000-11-01

Lord Rayleigh's well-known equations for resolution and depth of focus indicate that resolution is better improved by reducing the wavelength of light rather than by increasing the numerical aperture (NA) of the projection optics, particularly when NA is approaching its physical limit of 1.0 in air (or vacuum). Vector aerial image simulations of diffraction-limited Deep Ultraviolet (DUV) and Extreme Ultraviolet (EUV) lithographic systems verify this simple view, even though Rayleigh's constants in Microlithography are not constant because of a variety of image enhancement techniques that attempt to compensate for the shortcomings of the aerial image when it is pushed to the limit. The aerial image is not the whole story, however. The competition between DUV and EUV systems will be decided more by economic and technological factors such as risk, time and cost of development and cost of ownership. These in turn depend on cost, availability and quality of light sources, refracting materials, photoresists and reticles.

Method and apparatus for inspecting an EUV mask blank

DOEpatents

Goldberg, Kenneth A.

2005-11-08

An apparatus and method for at-wavelength EUV mask-blank characterization for inspection of moderate and low spatial frequency coating uniformity using a synchrotron or other source of EUV light. The apparatus provides for rapid, non-destruction, non-contact, at-wavelength qualification of large mask areas, and can be self-calibrating or be calibrated to well-characterized reference samples. It can further check for spatial variation of mask reflectivity or for global differences among masks. The apparatus and method is particularly suited for inspection of coating uniformity and quality and can detect defects in the order of 50 .mu.m and above.

A stand-alone compact EUV microscope based on gas-puff target source.

PubMed

Torrisi, Alfio; Wachulak, Przemyslaw; Węgrzyński, Łukasz; Fok, Tomasz; Bartnik, Andrzej; Parkman, Tomáš; Vondrová, Šárka; Turňová, Jana; Jankiewicz, Bartłomiej J; Bartosewicz, Bartosz; Fiedorowicz, Henryk

2017-02-01

We report on a very compact desk-top transmission extreme ultraviolet (EUV) microscope based on a laser-plasma source with a double stream gas-puff target, capable of acquiring magnified images of objects with a spatial (half-pitch) resolution of sub-50 nm. A multilayer ellipsoidal condenser is used to focus and spectrally narrow the radiation from the plasma, producing a quasi-monochromatic EUV radiation (λ = 13.8 nm) illuminating the object, whereas a Fresnel zone plate objective forms the image. Design details, development, characterization and optimization of the EUV source and the microscope are described and discussed. Test object and other samples were imaged to demonstrate superior resolution compared to visible light microscopy. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Preliminary error budget analysis of the coronagraphic instrument metis for the solar orbiter ESA mission

NASA Astrophysics Data System (ADS)

Da Deppo, Vania; Poletto, Luca; Crescenzio, Giuseppe; Fineschi, Silvano; Antonucci, Ester; Naletto, Giampiero

2017-11-01

METIS, the Multi Element Telescope for Imaging and Spectroscopy, is the solar coronagraph foreseen for the ESA Solar Orbiter mission. METIS is conceived to image the solar corona from a near-Sun orbit in three different spectral bands: in the HeII EUV narrow band at 30.4 nm, in the HI UV narrow band at 121.6 nm, and in the polarized visible light band (590 - 650 nm). It also incorporates the capability of multi-slit spectroscopy of the corona in the UV/EUV range at different heliocentric heights. METIS is an externally occulted coronagraph which adopts an "inverted occulted" configuration. The Inverted external occulter (IEO) is a small circular aperture at the METIS entrance; the Sun-disk light is rejected by a spherical mirror M0 through the same aperture, while the coronal light is collected by two annular mirrors M1-M2 realizing a Gregorian telescope. To allocate the spectroscopic part, one portion of the M2 is covered by a grating (i.e. approximately 1/8 of the solar corona will not be imaged). This paper presents the error budget analysis for this new concept coronagraph configuration, which incorporates 3 different sub-channels: UV and EUV imaging sub-channel, in which the UV and EUV light paths have in common the detector and all of the optical elements but a filter, the polarimetric visible light sub-channel which, after the telescope optics, has a dedicated relay optics and a polarizing unit, and the spectroscopic sub-channel, which shares the filters and the detector with the UV-EUV imaging one, but includes a grating instead of the secondary mirror. The tolerance analysis of such an instrument is quite complex: in fact not only the optical performance for the 3 sub-channels has to be maintained simultaneously, but also the positions of M0 and of the occulters (IEO, internal occulter and Lyot stop), which guarantee the optimal disk light suppression, have to be taken into account as tolerancing parameters. In the aim of assuring the scientific requirements are optimally fulfilled for all the sub-channels, the preliminary results of manufacturing, alignment and stability tolerance analysis for the whole instrument will be described and discussed.

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Fallica, Roberto; Fan, Daniel; Karim, Waiz; Vockenhuber, Michaela; van Bokhoven, Jeroen A.; Ekinci, Yasin

2016-09-01

Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

Mask characterization for CDU budget breakdown in advanced EUV lithography

NASA Astrophysics Data System (ADS)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2012-11-01

As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget Breakdown per product/process and Litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps to extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Evaluation of a LED-based flatbed document scanner for radiochromic film dosimetry in transmission mode.

PubMed

Lárraga-Gutiérrez, José Manuel; García-Garduño, Olivia Amanda; Treviño-Palacios, Carlos; Herrera-González, José Alfredo

2018-03-01

Flatbed scanners are the most frequently used reading instrument for radiochromic film dosimetry because its low cost, high spatial resolution, among other advantages. These scanners use a fluorescent lamp and a CCD array as light source and detector, respectively. Recently, manufacturers of flatbed scanners replaced the fluorescent lamp by light emission diodes (LED) as a light source. The goal of this work is to evaluate the performance of a commercial flatbed scanner with LED based source light for radiochromic film dosimetry. Film read out consistency, response uniformity, film-scanner sensitivity, long term stability and total dose uncertainty was evaluated. In overall, the performance of the LED flatbed scanner is comparable to that of a cold cathode fluorescent lamp (CCFL). There are important spectral differences between LED and CCFL lamps that results in a higher sensitivity of the LED scanner in the green channel. Total dose uncertainty, film response reproducibility and long-term stability of LED scanner are slightly better than those of the CCFL. However, the LED based scanner has a strong non-uniform response, up to 9%, that must be adequately corrected for radiotherapy dosimetry QA. The differences in light emission spectra between LED and CCFL lamps and its potential impact on film-scanner sensitivity suggest that the design of a dedicated flat-bed scanner with LEDs may improve sensitivity and dose uncertainty in radiochromic film dosimetry. Copyright © 2018 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

On the Absence of EUV Emission from Comet C/2012 S1 (ISON)

NASA Technical Reports Server (NTRS)

Bryans, Paul; Pesnell, W. Dean

2016-01-01

When the sungrazing comet C2012 S1 (ISON) made its perihelion passage within two solar radii of the Sun's surface, it was expected to be a bright emitter at extreme ultraviolet (EUV) wavelengths. However, despite solar EUV telescopes repointing to track the orbit of the comet, no emission was detected. This null result is interesting in its own right, offering the possibility of placing limits on the size and composition of the nucleus. We explain the lack of detection by considering the properties of the comet and the solar atmosphere that determine the intensity of EUV emission from sungrazing comets. By comparing these properties with those of sungrazing comet C2011 W3 (Lovejoy), which did emit in the EUV, we conclude that the primary factor resulting in non-detectable EUV emission from C2012 S1 (ISON) was an insufficiently large nucleus. We conclude that the radius of C2012 S1 (ISON) was at least a factor of four less than that of C2011 W3 (Lovejoy). This is consistent with white-light observations in the days before perihelion that suggested the comet was dramatically reducing in size on approach.

Optical element for full spectral purity from IR-generated EUV light sources

NASA Astrophysics Data System (ADS)

van den Boogaard, A. J. R.; Louis, E.; van Goor, F. A.; Bijkerk, F.

2009-03-01

Laser produced plasma (LLP) sources are generally considered attractive for high power EUV production in next generation lithography equipment. Such plasmas are most efficiently excited by the relatively long, infrared wavelengths of CO2-lasers, but a significant part of the rotational-vibrational excitation lines of the CO2 radiation will be backscattered by the plasma's critical density surface and consequently will be present as parasitic radiation in the spectrum of such sources. Since most optical elements in the EUV collecting and imaging train have a high reflection coefficient for IR radiation, undesirable heating phenomena at the resist level are likely to occur. In this study a completely new principle is employed to obtain full separation of EUV and IR radiation from the source by a single optical component. While the application of a transmission filter would come at the expense of EUV throughput, this technique potentially enables wavelength separation without loosing reflectance compared to a conventional Mo/Si multilayer coated element. As a result this method provides full spectral purity from the source without loss in EUV throughput. Detailed calculations on the principal of functioning are presented.

ON THE ABSENCE OF EUV EMISSION FROM COMET C/2012 S1 (ISON)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bryans, Paul; Pesnell, W. Dean

2016-05-10

When the sungrazing comet C/2012 S1 (ISON) made its perihelion passage within two solar radii of the Sun’s surface, it was expected to be a bright emitter at extreme ultraviolet (EUV) wavelengths. However, despite solar EUV telescopes repointing to track the orbit of the comet, no emission was detected. This “null result” is interesting in its own right, offering the possibility of placing limits on the size and composition of the nucleus. We explain the lack of detection by considering the properties of the comet and the solar atmosphere that determine the intensity of EUV emission from sungrazing comets. Bymore » comparing these properties with those of sungrazing comet C/2011 W3 (Lovejoy), which did emit in the EUV, we conclude that the primary factor resulting in non-detectable EUV emission from C/2012 S1 (ISON) was an insufficiently large nucleus. We conclude that the radius of C/2012 S1 (ISON) was at least a factor of four less than that of C/2011 W3 (Lovejoy). This is consistent with white-light observations in the days before perihelion that suggested the comet was dramatically reducing in size on approach.« less

Solar Demon: near real-time Flare, Dimming and EUV wave monitoring

NASA Astrophysics Data System (ADS)

Kraaikamp, Emil; Verbeeck, Cis

Dimmings and EUV waves have been observed routinely in EUV images since 1996. They are closely associated with coronal mass ejections (CMEs), and therefore provide useful information for early space weather alerts. On the one hand, automatic detection and characterization of dimmings and EUV waves can be used to gain better understanding of the underlying physical mechanisms. On the other hand, every dimming and EUV wave provides extra information on the associated front side CME, and can improve estimates of the geo-effectiveness and arrival time of the CME. Solar Demon has been designed to detect and characterize dimmings, EUV waves, as well as solar flares in near real-time on Solar Dynamics Observatory/Atmospheric Imaging Assembly (SDO/AIA) data. The detection modules are running continuously at the Royal Observatory of Belgium on both quick-look data, as well as synoptic science data. The output of Solar Demon can be accessed in near real-time on the Solar Demon website, and includes images, movies, light curves, and the numerical evolution of several parameters. Solar Demon is the result of collaboration between the FP7 projects AFFECTS and COMESEP. Flare detections of Solar Demon are integrated into the COMESEP alert system. Here we present the Solar Demon detection algorithms and their output. We will show several interesting flare, dimming and EUV wave events, and present general statistics of the detections made so far during solar cycle 24.

Design requirements for a stand alone EUV interferometer

NASA Astrophysics Data System (ADS)

Michallon, Ph.; Constancias, C.; Lagrange, A.; Dalzotto, B.

2008-03-01

EUV lithography is expected to be inserted for the 32/22 nm nodes with possible extension below. EUV resist availability remains one of the main issues to be resolved. There is an urgent need to provide suitable tools to accelerate resist development and to achieve resolution, LER and sensitivity specifications simultaneously. An interferometer lithography tool offers advantages regarding conventional EUV exposure tool. It allows the evaluation of resists, free from the deficiencies of optics and mask which are limiting the achieved resolution. Traditionally, a dedicated beam line from a synchrotron, with limited access, is used as a light source in EUV interference lithography. This paper identifies the technology locks to develop a stand alone EUV interferometer using a compact EUV source. It will describe the theoretical solutions adopted and especially look at the feasibility according to available technologies. EUV sources available on the market have been evaluated in terms of power level, source size, spatial coherency, dose uniformity, accuracy, stability and reproducibility. According to the EUV source characteristics, several optic designs were studied (simple or double gratings). For each of these solutions, the source and collimation optic specifications have been determined. To reduce the exposure time, a new grating technology will also be presented allowing to significantly increasing the transmission system efficiency. The optical grating designs were studied to allow multi-pitch resolution print on the same exposure without any focus adjustment. Finally micro mechanical system supporting the gratings was studied integrating the issues due to vacuum environment, alignment capability, motion precision, automation and metrology to ensure the needed placement control between gratings and wafer. A similar study was carried out for the collimation-optics mechanical support which depends on the source characteristics.

Multilayer deposition and EUV reflectance characterization of 131 ? flight mirrors for AIA at LLNL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soufli, R; Robinson, J C; Spiller, E

2006-02-22

Mo/Si multilayer coatings reflecting at 131 {angstrom} were deposited successfully on the AIA primary and secondary flight mirrors and on two coating witness Si wafers, on November 16, 2005, at LLNL. All coatings were characterized by means of EUV reflectance measurements at beamline 6.3.2 of the Advanced Light Source (ALS) synchrotron at LBNL, and were found to be well within specifications.

Tomographic reconstruction of circularly polarized high-harmonic fields: 3D attosecond metrology

PubMed Central

Chen, Cong; Tao, Zhensheng; Hernández-García, Carlos; Matyba, Piotr; Carr, Adra; Knut, Ronny; Kfir, Ofer; Zusin, Dimitry; Gentry, Christian; Grychtol, Patrik; Cohen, Oren; Plaja, Luis; Becker, Andreas; Jaron-Becker, Agnieszka; Kapteyn, Henry; Murnane, Margaret

2016-01-01

Bright, circularly polarized, extreme ultraviolet (EUV) and soft x-ray high-harmonic beams can now be produced using counter-rotating circularly polarized driving laser fields. Although the resulting circularly polarized harmonics consist of relatively simple pairs of peaks in the spectral domain, in the time domain, the field is predicted to emerge as a complex series of rotating linearly polarized bursts, varying rapidly in amplitude, frequency, and polarization. We extend attosecond metrology techniques to circularly polarized light by simultaneously irradiating a copper surface with circularly polarized high-harmonic and linearly polarized infrared laser fields. The resulting temporal modulation of the photoelectron spectra carries essential phase information about the EUV field. Utilizing the polarization selectivity of the solid surface and by rotating the circularly polarized EUV field in space, we fully retrieve the amplitude and phase of the circularly polarized harmonics, allowing us to reconstruct one of the most complex coherent light fields produced to date. PMID:26989782

Experimental study of EUV mirror radiation damage resistance under long-term free-electron laser exposures below the single-shot damage threshold

PubMed Central

Makhotkin, Igor A.; Sobierajski, Ryszard; Chalupský, Jaromir; Tiedtke, Kai; de Vries, Gosse; Störmer, Michael; Scholze, Frank; Siewert, Frank; van de Kruijs, Robbert W. E.; Milov, Igor; Louis, Eric; Jacyna, Iwanna; Jurek, Marek; Klinger, Dorota; Syryanyy, Yevgen; Juha, Libor; Hájková, Věra; Saksl, Karel; Faatz, Bart; Keitel, Barbara; Plönjes, Elke; Toleikis, Sven; Loch, Rolf; Hermann, Martin; Strobel, Sebastian; Nienhuys, Han-Kwang; Gwalt, Grzegorz; Mey, Tobias; Enkisch, Hartmut

2018-01-01

The durability of grazing- and normal-incidence optical coatings has been experimentally assessed under free-electron laser irradiation at various numbers of pulses up to 16 million shots and various fluence levels below 10% of the single-shot damage threshold. The experiment was performed at FLASH, the Free-electron LASer in Hamburg, using 13.5 nm extreme UV (EUV) radiation with 100 fs pulse duration. Polycrystalline ruthenium and amorphous carbon 50 nm thin films on silicon substrates were tested at total external reflection angles of 20° and 10° grazing incidence, respectively. Mo/Si periodical multilayer structures were tested in the Bragg reflection condition at 16° off-normal angle of incidence. The exposed areas were analysed post-mortem using differential contrast visible light microscopy, EUV reflectivity mapping and scanning X-ray photoelectron spectroscopy. The analysis revealed that Ru and Mo/Si coatings exposed to the highest dose and fluence level show a few per cent drop in their EUV reflectivity, which is explained by EUV-induced oxidation of the surface. PMID:29271755

Experimental study of EUV mirror radiation damage resistance under long-term free-electron laser exposures below the single-shot damage threshold.

PubMed

Makhotkin, Igor A; Sobierajski, Ryszard; Chalupský, Jaromir; Tiedtke, Kai; de Vries, Gosse; Störmer, Michael; Scholze, Frank; Siewert, Frank; van de Kruijs, Robbert W E; Milov, Igor; Louis, Eric; Jacyna, Iwanna; Jurek, Marek; Klinger, Dorota; Nittler, Laurent; Syryanyy, Yevgen; Juha, Libor; Hájková, Věra; Vozda, Vojtěch; Burian, Tomáš; Saksl, Karel; Faatz, Bart; Keitel, Barbara; Plönjes, Elke; Schreiber, Siegfried; Toleikis, Sven; Loch, Rolf; Hermann, Martin; Strobel, Sebastian; Nienhuys, Han Kwang; Gwalt, Grzegorz; Mey, Tobias; Enkisch, Hartmut

2018-01-01

The durability of grazing- and normal-incidence optical coatings has been experimentally assessed under free-electron laser irradiation at various numbers of pulses up to 16 million shots and various fluence levels below 10% of the single-shot damage threshold. The experiment was performed at FLASH, the Free-electron LASer in Hamburg, using 13.5 nm extreme UV (EUV) radiation with 100 fs pulse duration. Polycrystalline ruthenium and amorphous carbon 50 nm thin films on silicon substrates were tested at total external reflection angles of 20° and 10° grazing incidence, respectively. Mo/Si periodical multilayer structures were tested in the Bragg reflection condition at 16° off-normal angle of incidence. The exposed areas were analysed post-mortem using differential contrast visible light microscopy, EUV reflectivity mapping and scanning X-ray photoelectron spectroscopy. The analysis revealed that Ru and Mo/Si coatings exposed to the highest dose and fluence level show a few per cent drop in their EUV reflectivity, which is explained by EUV-induced oxidation of the surface.

Performance of one hundred watt HVM LPP-EUV source

NASA Astrophysics Data System (ADS)

Mizoguchi, Hakaru; Nakarai, Hiroaki; Abe, Tamotsu; Nowak, Krzysztof M.; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Hori, Tsukasa; Kodama, Takeshi; Shiraishi, Yutaka; Yanagida, Tatsuya; Soumagne, Georg; Yamada, Tsuyoshi; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi

2015-03-01

We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as: combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting, and mitigation with magnetic field, have been developed in Gigaphoton Inc. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. Based on these data we are developing first practical source for HVM - "GL200E". This data means 250W EUV power will be able to realize around 20kW level pulsed CO2 laser. We have reported engineering data from our recent test such around 43W average clean power, CE=2.0%, with 100kHz operation and other data 19). We have already finished preparation of higher average power CO2 laser more than 20kW at output power cooperate with Mitsubishi Electric Corporation 14). Recently we achieved 92W with 50kHz, 50% duty cycle operation 20). We have reported component technology progress of EUV light source system. We report promising experimental data and result of simulation of magnetic mitigation system in Proto #1 system. We demonstrated several data with Proto #2 system: (1) emission data of 140W in burst under 70kHz 50% duty cycle during 10 minutes. (2) emission data of 118W in burst under 60kHz 70% duty cycle during 10 minutes. (3) emission data of 42W in burst under 20kHz 50% duty cycle (10000pls/0.5ms OFF) during 3 hours (110Mpls). Also we report construction of Pilot #1 system. Final target is week level operation with 250W EUV power with CE=4%, more than 27kW CO2 laser power by the end of Q2 of 2015.

Probing the Production of Extreme-ultraviolet Late-phase Solar Flares Using the Model Enthalpy-based Thermal Evolution of Loops

NASA Astrophysics Data System (ADS)

Dai, Yu; Ding, Mingde

2018-04-01

Recent observations in extreme-ultraviolet (EUV) wavelengths reveal an EUV late phase in some solar flares that is characterized by a second peak in warm coronal emissions (∼3 MK) several tens of minutes to a few hours after the soft X-ray (SXR) peak. Using the model enthalpy-based thermal evolution of loops (EBTEL), we numerically probe the production of EUV late-phase solar flares. Starting from two main mechanisms of producing the EUV late phase, i.e., long-lasting cooling and secondary heating, we carry out two groups of numerical experiments to study the effects of these two processes on the emission characteristics in late-phase loops. In either of the two processes an EUV late-phase solar flare that conforms to the observational criteria can be numerically synthesized. However, the underlying hydrodynamic and thermodynamic evolutions in late-phase loops are different between the two synthetic flare cases. The late-phase peak due to a long-lasting cooling process always occurs during the radiative cooling phase, while that powered by a secondary heating is more likely to take place in the conductive cooling phase. We then propose a new method for diagnosing the two mechanisms based on the shape of EUV late-phase light curves. Moreover, from the partition of energy input, we discuss why most solar flares are not EUV late flares. Finally, by addressing some other factors that may potentially affect the loop emissions, we also discuss why the EUV late phase is mainly observed in warm coronal emissions.

GLOBAL ENERGETICS OF SOLAR FLARES. IV. CORONAL MASS EJECTION ENERGETICS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aschwanden, Markus J., E-mail: aschwanden@lmsal.com

2016-11-01

This study entails the fourth part of a global flare energetics project, in which the mass m {sub cme}, kinetic energy E {sub kin}, and the gravitational potential energy E {sub grav} of coronal mass ejections (CMEs) is measured in 399 M and X-class flare events observed during the first 3.5 years of the Solar Dynamics Observatory (SDO) mission, using a new method based on the EUV dimming effect. EUV dimming is modeled in terms of a radial adiabatic expansion process, which is fitted to the observed evolution of the total emission measure of the CME source region. The modelmore » derives the evolution of the mean electron density, the emission measure, the bulk plasma expansion velocity, the mass, and the energy in the CME source region. The EUV dimming method is truly complementary to the Thomson scattering method in white light, which probes the CME evolution in the heliosphere at r ≳ 2 R {sub ⊙}, while the EUV dimming method tracks the CME launch in the corona. We compare the CME parameters obtained in white light with the LASCO/C2 coronagraph with those obtained from EUV dimming with the Atmospheric Imaging Assembly onboard the SDO for all identical events in both data sets. We investigate correlations between CME parameters, the relative timing with flare parameters, frequency occurrence distributions, and the energy partition between magnetic, thermal, nonthermal, and CME energies. CME energies are found to be systematically lower than the dissipated magnetic energies, which is consistent with a magnetic origin of CMEs.« less

SWAP OBSERVATIONS OF THE LONG-TERM, LARGE-SCALE EVOLUTION OF THE EXTREME-ULTRAVIOLET SOLAR CORONA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seaton, Daniel B.; De Groof, Anik; Berghmans, David

The Sun Watcher with Active Pixels and Image Processing (SWAP) EUV solar telescope on board the Project for On-Board Autonomy 2 spacecraft has been regularly observing the solar corona in a bandpass near 17.4 nm since 2010 February. With a field of view of 54 × 54 arcmin, SWAP provides the widest-field images of the EUV corona available from the perspective of the Earth. By carefully processing and combining multiple SWAP images, it is possible to produce low-noise composites that reveal the structure of the EUV corona to relatively large heights. A particularly important step in this processing was tomore » remove instrumental stray light from the images by determining and deconvolving SWAP's point-spread function from the observations. In this paper, we use the resulting images to conduct the first-ever study of the evolution of the large-scale structure of the corona observed in the EUV over a three year period that includes the complete rise phase of solar cycle 24. Of particular note is the persistence over many solar rotations of bright, diffuse features composed of open magnetic fields that overlie polar crown filaments and extend to large heights above the solar surface. These features appear to be related to coronal fans, which have previously been observed in white-light coronagraph images and, at low heights, in the EUV. We also discuss the evolution of the corona at different heights above the solar surface and the evolution of the corona over the course of the solar cycle by hemisphere.« less

Emulation of anamorphic imaging on the SHARP extreme ultraviolet mask microscope

DOE PAGES

Benk, Markus P.; Wojdyla, Antoine; Chao, Weilun; ...

2016-07-12

The SHARP high-numerical aperture actinic reticle review project is a synchrotron-based, extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP emulates the illumination and imaging conditions of current EUV lithography scanners and those several generations into the future. An anamorphic imaging optic with increased mask-side numerical aperture (NA) in the horizontal and increased demagnification in the vertical direction has been proposed in this paper to overcome limitations of current multilayer coatings and extend EUV lithography beyond 0.33 NA. Zoneplate lenses with an anamorphic 4×/8× NA of 0.55 are fabricated and installed in the SHARP microscope to emulate anamorphic imaging. SHARP’smore » Fourier synthesis illuminator with a range of angles exceeding the collected solid angle of the newly designed elliptical zoneplates can produce arbitrary angular source spectra matched to anamorphic imaging. A target with anamorphic dense features down to 50-nm critical dimension is fabricated using 40 nm of nickel as the absorber. In a demonstration experiment, anamorphic imaging at 0.55 4×/8× NA and 6 deg central ray angle (CRA) is compared with conventional imaging at 0.5 4× NA and 8 deg CRA. A significant contrast loss in horizontal features is observed in the conventional images. Finally, the anamorphic images show the same image quality in the horizontal and vertical directions.« less

Emulation of anamorphic imaging on the SHARP extreme ultraviolet mask microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benk, Markus P.; Wojdyla, Antoine; Chao, Weilun

The SHARP high-numerical aperture actinic reticle review project is a synchrotron-based, extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP emulates the illumination and imaging conditions of current EUV lithography scanners and those several generations into the future. An anamorphic imaging optic with increased mask-side numerical aperture (NA) in the horizontal and increased demagnification in the vertical direction has been proposed in this paper to overcome limitations of current multilayer coatings and extend EUV lithography beyond 0.33 NA. Zoneplate lenses with an anamorphic 4×/8× NA of 0.55 are fabricated and installed in the SHARP microscope to emulate anamorphic imaging. SHARP’smore » Fourier synthesis illuminator with a range of angles exceeding the collected solid angle of the newly designed elliptical zoneplates can produce arbitrary angular source spectra matched to anamorphic imaging. A target with anamorphic dense features down to 50-nm critical dimension is fabricated using 40 nm of nickel as the absorber. In a demonstration experiment, anamorphic imaging at 0.55 4×/8× NA and 6 deg central ray angle (CRA) is compared with conventional imaging at 0.5 4× NA and 8 deg CRA. A significant contrast loss in horizontal features is observed in the conventional images. Finally, the anamorphic images show the same image quality in the horizontal and vertical directions.« less

Generation of sub-optical-cycle, carrier-envelope-phase--insensitive, extreme-uv pulses via nonlinear stabilization in a waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandhu, Arvinder S.; Gagnon, Etienne; Paul, Ariel

2006-12-15

We present evidence for a new regime of high-harmonic generation in a waveguide where bright, sub-optical-cycle, quasimonochromatic, extreme ultraviolet (EUV) light is generated via a mechanism that is relatively insensitive to carrier-envelope phase fluctuations. The interplay between the transient plasma which determines the phase matching conditions and the instantaneous laser intensity which drives harmonic generation gives rise to a new nonlinear stabilization mechanism in the waveguide, localizing the phase-matched EUV emission to within sub-optical-cycle duration. The sub-optical-cycle EUV emission generated by this mechanism can also be selectively optimized in the spectral domain by simple tuning of parameters.

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16 nm HP resolution, demonstrating the need for alternative resist solutions at 13 nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research enabling the characterization and development of new resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

Optical inspection of NGL masks

NASA Astrophysics Data System (ADS)

Pettibone, Donald W.; Stokowski, Stanley E.

2004-12-01

For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

The artefacts of radiochromic film dosimetry with flatbed scanners and their causation by light scattering from radiation-induced polymers.

PubMed

Schoenfeld, Andreas A; Poppinga, Daniela; Harder, Dietrich; Doerner, Karl-Joachim; Poppe, Bjoern

2014-07-07

Optical experiments and theoretical considerations have been undertaken in order to understand the causes of the 'orientation effect' and the 'parabola effect', the artefacts impairing the desired light absorption measurement on radiochromic EBT3 films with flatbed scanners. EBT3 films exposed to doses up to 20.9 Gy were scanned with an Epson Expression 10000XL flatbed scanner in landscape and portrait orientation. The horizontally and vertically polarized light components of the scanner were determined, and another Epson Expression 10000XL flatbed scanner was disassembled to examine its optical components. The optical properties of exposed and unexposed EBT3 films were studied with incident polarized and unpolarized white light, and the transmitted red light was investigated for its polarization and scattering properties including the distribution of the scattering angles. Neutral density filters were studied for comparison. Guidance was sought from the theory of light scattering from rod-like macromolecular structures. The drastic dose-dependent variation of the transmitted total light current as function of the orientation of front and rear polarizers, interpreted by light scattering theory, shows that the radiation-induced polymerization of the monomers of EBT3 films produces light scattering oscillators preferably polarized at right angles with the coating direction of the film. The directional distribution of the scattered light is partly anisotropic, with a preferred scattering plane at right angles with the coating direction, indicating light scattering from stacks of coherently vibrating oscillators piled up along the monomer crystals. The polyester carrier film also participates in these effects. The 'orientation' and 'parabola' artefacts due to flatbed scanning of radiochromic films can be explained by the interaction of the polarization-dependent and anisotropic light scattering from exposed and unexposed EBT3 films with the quantitative difference between the scanner's horizontally and vertically polarized light supply and with the limited directional acceptance of the scanner's light recording system.

A Comet's Missing Light

NASA Astrophysics Data System (ADS)

Kohler, Susanna

2016-05-01

On 28 November 2013, comet C/2012 S1 better known as comet ISON should have passed within two solar radii of the Suns surface as it reached perihelion in its orbit. But instead of shining in extreme ultraviolet (EUV) wavelengths as it grazed the solar surface, the comet was never detected by EUV instruments. What happened to comet ISON?Missing EmissionWhen a sungrazing comet passes through the solar corona, it leaves behind a trail of molecules evaporated from its surface. Some of these molecules emit EUV light, which can be detected by instruments on telescopes like the space-based Solar Dynamics Observatory (SDO).Comet ISON, a comet that arrived from deep space and was predicted to graze the Suns corona in November 2013, was expected to cause EUV emission during its close passage. But analysis of the data from multiple telescopes that tracked ISON in EUV including SDO reveals no sign of it at perihelion.In a recent study, Paul Bryans and DeanPesnell, scientists from NCARs High Altitude Observatory and NASA Goddard Space Flight Center, try to determine why ISON didnt display this expected emission.Comparing ISON and LovejoyIn December 2011, another comet dipped into the Suns corona: comet Lovejoy. This image, showingthe orbit Lovejoy took around the Sun, is a composite of SDO images of the pre- and post-perihelion phases of the orbit. Click for a closer look! The dashed part of the curve represents where Lovejoy passed out of view behind the Sun. [Bryans Pesnell 2016]This is not the first time weve watched a sungrazing comet with EUV-detecting telescopes: Comet Lovejoy passed similarly close to the Sun in December 2011. But when Lovejoy grazed the solar corona, it emitted brightly in EUV. So why didnt ISON? Bryans and Pesnell argue that there are two possibilities:the coronal conditions experienced by the two comets were not similar, orthe two comets themselves were not similar.To establish which factor is the most relevant, the authors first demonstrate that both comets experienced very similar radiation fields as they passed perihelion. They also show that the properties of the Suns corona experienced by each comet like its density and magnetic field topology were roughly the same.Bryans and Pesnell argue that, as both comets appear to have encountered similar solar conditions, the most likely explanation for ISONs lack of detectable EUV emission is that it didnt deposit as much material in its orbit as Lovejoy did. They show that this would happen if ISONs nucleus were four times smaller in radius than Lovejoys, spanning a mere 5070 meters in comparison to Lovejoys 200300 meters.This conclusion is consistent with white-light observations of ISON that suggest that, though it might have started out significantly larger than Lovejoy, ISON underwent dramatic mass loss as it approached the Sun. By the time it arrived at perihelion, it was likely no longer large enough to create a strong EUV signal resulting in the non-detection of this elusive comet with SDO and other telescopes.CitationPaul Bryans and W. Dean Pesnell 2016 ApJ 822 77. doi:10.3847/0004-637X/822/2/77

Methods for CT automatic exposure control protocol translation between scanner platforms.

PubMed

McKenney, Sarah E; Seibert, J Anthony; Lamba, Ramit; Boone, John M

2014-03-01

An imaging facility with a diverse fleet of CT scanners faces considerable challenges when propagating CT protocols with consistent image quality and patient dose across scanner makes and models. Although some protocol parameters can comfortably remain constant among scanners (eg, tube voltage, gantry rotation time), the automatic exposure control (AEC) parameter, which selects the overall mA level during tube current modulation, is difficult to match among scanners, especially from different CT manufacturers. Objective methods for converting tube current modulation protocols among CT scanners were developed. Three CT scanners were investigated, a GE LightSpeed 16 scanner, a GE VCT scanner, and a Siemens Definition AS+ scanner. Translation of the AEC parameters such as noise index and quality reference mAs across CT scanners was specifically investigated. A variable-diameter poly(methyl methacrylate) phantom was imaged on the 3 scanners using a range of AEC parameters for each scanner. The phantom consisted of 5 cylindrical sections with diameters of 13, 16, 20, 25, and 32 cm. The protocol translation scheme was based on matching either the volumetric CT dose index or image noise (in Hounsfield units) between two different CT scanners. A series of analytic fit functions, corresponding to different patient sizes (phantom diameters), were developed from the measured CT data. These functions relate the AEC metric of the reference scanner, the GE LightSpeed 16 in this case, to the AEC metric of a secondary scanner. When translating protocols between different models of CT scanners (from the GE LightSpeed 16 reference scanner to the GE VCT system), the translation functions were linear. However, a power-law function was necessary to convert the AEC functions of the GE LightSpeed 16 reference scanner to the Siemens Definition AS+ secondary scanner, because of differences in the AEC functionality designed by these two companies. Protocol translation on the basis of quantitative metrics (volumetric CT dose index or measured image noise) is feasible. Protocol translation has a dependency on patient size, especially between the GE and Siemens systems. Translation schemes that preserve dose levels may not produce identical image quality. Copyright © 2014 American College of Radiology. Published by Elsevier Inc. All rights reserved.

Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2013-04-01

As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of the overall EUV CDU contribution helps deliver an accurate and integral CDU BB per product/process and litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Improvements in the EQ-10 electrodeless Z-pinch EUV source for metrology applications

NASA Astrophysics Data System (ADS)

Horne, Stephen F.; Gustafson, Deborah; Partlow, Matthew J.; Besen, Matthew M.; Smith, Donald K.; Blackborow, Paul A.

2011-04-01

Now that EUV lithography systems are beginning to ship into the fabs for next generation chips it is more critical that the EUV infrastructure developments are keeping pace. Energetiq Technology has been shipping the EQ-10 Electrodeless Z-pinch™ light source since 2005. The source is currently being used for metrology, mask inspection, and resist development. These applications require especially stable performance in both power and source size. Over the last 5 years Energetiq has made many source modifications which have included better thermal management as well as high pulse rate operation6. Recently we have further increased the system power handling and electrical pulse reproducibility. The impact of these modifications on source performance will be reported.

Quantitative Evaluation of Hard X-ray Damage to Biological Samples using EUV Ptychography

NASA Astrophysics Data System (ADS)

Baksh, Peter; Odstrcil, Michal; Parsons, Aaron; Bailey, Jo; Deinhardt, Katrin; Chad, John E.; Brocklesby, William S.; Frey, Jeremy G.

2017-06-01

Coherent diffractive imaging (CDI) has become a standard method on a variety of synchrotron beam lines. The high brilliance short wavelength radiation from these sources can be used to reconstruct attenuation and relative phase of a sample with nanometre resolution via CDI methods. However, the interaction between the sample and high energy ionising radiation can cause degradation to sample structure. We demonstrate, using a laboratory based high harmonic generation (HHG) based extreme ultraviolet (EUV) source, imaging a sample of hippocampal neurons using the ptychography method. The significant increase in contrast of the sample in the EUV light allows identification of damage induced from exposure to 7.3 keV photons, without causing any damage to the sample itself.

Absorption and emission of single attosecond light pulses in an autoionizing gaseous medium dressed by a time-delayed control field

NASA Astrophysics Data System (ADS)

Chu, Wei-Chun; Lin, C. D.

2013-01-01

An extreme ultraviolet (EUV) single attosecond pulse passing through a laser-dressed dense gas is studied theoretically. The weak EUV pulse pumps the helium gas from the ground state to the 2s2p(1P) autoionizing state, which is coupled to the 2s2(1S) autoionizing state by a femtosecond infrared laser with the intensity in the order of 1012 W/cm2. The simulation shows how the transient absorption and emission of the EUV are modified by the coupling laser. A simple analytical expression for the atomic response derived for δ-function pulses reveals the strong modification of the Fano lineshape in the spectra, where these features are quite universal and remain valid for realistic pulse conditions. We further account for the propagation of pulses in the medium and show that the EUV signal at the atomic resonance can be enhanced in the gaseous medium by more than 50% for specifically adjusted laser parameters, and that this enhancement persists as the EUV propagates in the gaseous medium. Our result demonstrates the high-level control of nonlinear optical effects that are achievable with attosecond pulses.

 X-RAYING THE DARK SIDE OF VENUS—SCATTER FROM VENUS’ MAGNETOTAIL?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afshari, M.; Peres, G.; Petralia, A.

We analyze significant X-ray, EUV, and UV emission coming from the dark side of Venus observed with Hinode /XRT and Solar Dynamics Observatory /Atmospheric Imaging Assembly ( SDO /AIA) during a transit across the solar disk that occurred in 2012. As a check we have analyzed an analogous Mercury transit that occurred in 2006. We have used the latest version of the Hinode /XRT point spread function to deconvolve Venus and Mercury X-ray images, to remove instrumental scattering. After deconvolution, the flux from Venus’ shadow remains significant while that of Mercury becomes negligible. Since stray light contamination affects the XRT Ti-poly filtermore » data we use, we performed the same analysis with XRT Al-mesh filter data, not affected by the light leak. Even the latter data show residual flux. We have also found significant EUV (304 Å, 193 Å, 335 Å) and UV (1700 Å) flux in Venus’ shadow, measured with SDO /AIA. The EUV emission from Venus’ dark side is reduced, but still significant, when deconvolution is applied. The light curves of the average flux of the shadow in the X-ray, EUV, and UV bands appear different as Venus crosses the solar disk, but in any of them the flux is, at any time, approximately proportional to the average flux in a ring surrounding Venus, and therefore proportional to that of the solar regions around Venus’ obscuring disk line of sight. The proportionality factor depends on the band. This phenomenon has no clear origin; we suggest that it may be due to scatter occurring in the very long magnetotail of Venus.« less

ANALYSIS AND MODELING OF TWO FLARE LOOPS OBSERVED BY AIA AND EIS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y.; Ding, M. D.; Qiu, J.

2012-10-10

We analyze and model an M1.0 flare observed by SDO/AIA and Hinode/EIS to investigate how flare loops are heated and evolve subsequently. The flare is composed of two distinctive loop systems observed in extreme ultraviolet (EUV) images. The UV 1600 A emission at the feet of these loops exhibits a rapid rise, followed by enhanced emission in different EUV channels observed by the Atmospheric Imaging Assembly (AIA) and the EUV Imaging Spectrometer (EIS). Such behavior is indicative of impulsive energy deposit and the subsequent response in overlying coronal loops that evolve through different temperatures. Using the method we recently developed,more » we infer empirical heating functions from the rapid rise of the UV light curves for the two loop systems, respectively, treating them as two big loops with cross-sectional area of 5'' by 5'', and compute the plasma evolution in the loops using the EBTEL model. We compute the synthetic EUV light curves, which, with the limitation of the model, reasonably agree with observed light curves obtained in multiple AIA channels and EIS lines: they show the same evolution trend and their magnitudes are comparable by within a factor of two. Furthermore, we also compare the computed mean enthalpy flow velocity with the Doppler shift measurements by EIS during the decay phase of the two loops. Our results suggest that the two different loops with different heating functions as inferred from their footpoint UV emission, combined with their different lengths as measured from imaging observations, give rise to different coronal plasma evolution patterns captured both in the model and in observations.« less

Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs

NASA Astrophysics Data System (ADS)

Keens, Simon; Rossa, Bernhard; Frei, Marcel

2016-03-01

As the semiconductor industry proceeds to develop ever better sources of extreme ultraviolet (EUV) light for photolithography applications, two distinct technologies have come to prominence: Tin-plasma and free electron laser (FEL) sources. Tin plasma sources have been in development within the industry for many years, and have been widely reported. Meanwhile, FELs represent the most promising alternative to create high power EUV frequencies and, while tin-plasma source development has been ongoing, such lasers have been continuously developed by academic institutions for use in fundamental research programmes in conjunction with universities and national scientific institutions. This paper follows developments in the field of academic FELs, and presents information regarding novel technologies, specifically in the area of RF design strategy, that may be incorporated into future industrial FEL systems for EUV lithography in order to minimize the necessary investment and operational costs. It goes on to try to assess the cost-benefit of an alternate RF design strategy, based upon previous studies.

Materials Properties and Solvated Electron Dynamics of Isolated Nanoparticles and Nanodroplets Probed with Ultrafast Extreme Ultraviolet Beams.

PubMed

Ellis, Jennifer L; Hickstein, Daniel D; Xiong, Wei; Dollar, Franklin; Palm, Brett B; Keister, K Ellen; Dorney, Kevin M; Ding, Chengyuan; Fan, Tingting; Wilker, Molly B; Schnitzenbaumer, Kyle J; Dukovic, Gordana; Jimenez, Jose L; Kapteyn, Henry C; Murnane, Margaret M

2016-02-18

We present ultrafast photoemission measurements of isolated nanoparticles in vacuum using extreme ultraviolet (EUV) light produced through high harmonic generation. Surface-selective static EUV photoemission measurements were performed on nanoparticles with a wide array of compositions, ranging from ionic crystals to nanodroplets of organic material. We find that the total photoelectron yield varies greatly with nanoparticle composition and provides insight into material properties such as the electron mean free path and effective mass. Additionally, we conduct time-resolved photoelectron yield measurements of isolated oleylamine nanodroplets, observing that EUV photons can create solvated electrons in liquid nanodroplets. Using photoemission from a time-delayed 790 nm pulse, we observe that a solvated electron is produced in an excited state and subsequently relaxes to its ground state with a lifetime of 151 ± 31 fs. This work demonstrates that femotosecond EUV photoemission is a versatile surface-sensitive probe of the properties and ultrafast dynamics of isolated nanoparticles.

EQ-10 electrodeless Z-pinch EUV source for metrology applications

NASA Astrophysics Data System (ADS)

Gustafson, Deborah; Horne, Stephen F.; Partlow, Matthew J.; Besen, Matthew M.; Smith, Donald K.; Blackborow, Paul A.

2011-11-01

With EUV Lithography systems shipping, the requirements for highly reliable EUV sources for mask inspection and resist outgassing are becoming better defined, and more urgent. The sources needed for metrology applications are very different than that needed for lithography; brightness (not power) is the key requirement. Suppliers for HVM EUV sources have all resources working on high power and have not entered the smaller market for metrology. Energetiq Technology has been shipping the EQ-10 Electrodeless Z-pinchTM light source since 19951. The source is currently being used for metrology, mask inspection, and resist development2-4. These applications require especially stable performance in both output power and plasma size and position. Over the last 6 years Energetiq has made many source modifications which have included better thermal management to increase the brightness and power of the source. We now have introduced a new source that will meet requirements of some of the mask metrology first generation tools; this source will be reviewed.

Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sasaki, Akira; Sunahara, Atsushi; Furukawa, Hiroyuki

Atomic processes in Sn plasmas are investigated for application to extreme-ultraviolet (EUV) light sources used in microlithography. We develop a full collisional radiative (CR) model of Sn plasmas based on calculated atomic data using Hebrew University Lawrence Livermore Atomic Code (HULLAC). Resonance and satellite lines from singly and multiply excited states of Sn ions, which contribute significantly to the EUV emission, are identified and included in the model through a systematic investigation of their effect on the emission spectra. The wavelengths of the 4d-4f+4p-4d transitions of Sn{sup 5+} to Sn{sup 13+} are investigated, because of their importance for determining themore » conversion efficiency of the EUV source, in conjunction with the effect of configuration interaction in the calculation of atomic structure. Calculated emission spectra are compared with those of charge exchange spectroscopy and of laser produced plasma EUV sources. The comparison is also carried out for the opacity of a radiatively heated Sn sample. A reasonable agreement is obtained between calculated and experimental EUV emission spectra observed under the typical condition of EUV sources with the ion density and ionization temperature of the plasma around 10{sup 18} cm{sup -3} and 20 eV, respectively, by applying a wavelength correction to the resonance and satellite lines. Finally, the spectral emissivity and opacity of Sn plasmas are calculated as a function of electron temperature and ion density. The results are useful for radiation hydrodynamics simulations for the optimization of EUV sources.« less

Shock Formation Height in the Solar Corona Estimated from SDO and Radio Observations

NASA Technical Reports Server (NTRS)

Gopalswamy, N.; Nitta, N.

2011-01-01

Wave transients at EUV wavelengths and type II radio bursts are good indicators of shock formation in the solar corona. We use recent EUV wave observations from SDO and combine them with metric type II radio data to estimate the height in the corona where the shocks form. We compare the results with those obtained from other methods. We also estimate the shock formation heights independently using white-light observations of coronal mass ejections that ultimately drive the shocks.

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-07-01

Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a "Photosensitized Chemically Amplified Resist™" (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16-nm HP resolution, demonstrating the need for alternative resist solutions at 13-nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research, enabling the characterization and development of resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

Ptychographic imaging with partially coherent plasma EUV sources

NASA Astrophysics Data System (ADS)

Bußmann, Jan; Odstrčil, Michal; Teramoto, Yusuke; Juschkin, Larissa

2017-12-01

We report on high-resolution lens-less imaging experiments based on ptychographic scanning coherent diffractive imaging (CDI) method employing compact plasma sources developed for extreme ultraviolet (EUV) lithography applications. Two kinds of discharge sources were used in our experiments: a hollow-cathode-triggered pinch plasma source operated with oxygen and for the first time a laser-assisted discharge EUV source with a liquid tin target. Ptychographic reconstructions of different samples were achieved by applying constraint relaxation to the algorithm. Our ptychography algorithms can handle low spatial coherence and broadband illumination as well as compensate for the residual background due to plasma radiation in the visible spectral range. Image resolution down to 100 nm is demonstrated even for sparse objects, and it is limited presently by the sample structure contrast and the available coherent photon flux. We could extract material properties by the reconstruction of the complex exit-wave field, gaining additional information compared to electron microscopy or CDI with longer-wavelength high harmonic laser sources. Our results show that compact plasma-based EUV light sources of only partial spatial and temporal coherence can be effectively used for lens-less imaging applications. The reported methods may be applied in combination with reflectometry and scatterometry for high-resolution EUV metrology.

Removal of Tin from Extreme Ultraviolet Collector Optics by an In-Situ Hydrogen Plasma

NASA Astrophysics Data System (ADS)

Elg, Daniel Tyler

Throughout the 1980s and 1990s, as the semiconductor industry upheld Moore's Law and continuously shrank device feature sizes, the wavelength of the lithography source remained at or below the resolution limit of the minimum feature size. Since 2001, however, the light source has been the 193nm ArF excimer laser. While the industry has managed to keep up with Moore's Law, shrinking feature sizes without shrinking the lithographic wavelength has required extra innovations and steps that increase fabrication time, cost, and error. These innovations include immersion lithography and double patterning. Currently, the industry is at the 14 nm technology node. Thus, the minimum feature size is an order of magnitude below the exposure wavelength. For the 10 nm node, triple and quadruple patterning have been proposed, causing potentially even more cost, fabrication time, and error. Such a trend cannot continue indefinitely in an economic fashion, and it is desirable to decrease the wavelength of the lithography sources. Thus, much research has been invested in extreme ultraviolet lithography (EUVL), which uses 13.5 nm light. While much progress has been made in recent years, some challenges must still be solved in order to yield a throughput high enough for EUVL to be commercially viable for high-volume manufacturing (HVM). One of these problems is collector contamination. Due to the 92 eV energy of a 13.5 nm photon, EUV light must be made by a plasma, rather than by a laser. Specifically, the industrially-favored EUV source topology is to irradiate a droplet of molten Sn with a laser, creating a dense, hot laser-produced plasma (LPP) and ionizing the Sn to (on average) the +10 state. Additionally, no materials are known to easily transmit EUV. All EUV light must be collected by a collector optic mirror, which cannot be guarded by a window. The plasmas used in EUV lithography sources expel Sn ions and neutrals, which degrade the quality of collector optics. The mitigation of this debris is one of the main problems facing potential manufacturers of EUV sources. which can damage the collector optic in three ways: sputtering, implantation, and deposition. The first two damage processes are irreversible and are caused by the high energies (1-10 keV) of the ion debris. Debris mitigation methods have largely managed to reduce this problem by using collisions with H2 buffer gas to slow down the energetic ions. However, deposition can take place at all ion and neutral energies, and no mitigation method can deterministically deflect all neutrals away from the collector. Thus, deposition still takes place, lowering the collector reflectivity and increasing the time needed to deliver enough EUV power to pattern a wafer. Additionally, even once EUV reaches HVM insertion, source power will need to be continually increased as feature sizes continue to shrink; this increase in source power may potentially come at a cost of increased debris. Thus, debris mitigation solutions that work for the initial generation of commercial EUVL systems may not be adequate for future generations. An in-situ technology to clean collector optics without source downtime is required. which will require an in-situ technology to clean collector optics. The novel cleaning solution described in this work is to create the radicals directly on the collector surface by using the collector itself to drive a capacitively-coupled hydrogen plasma. This allows for radical creation at the desired location without requiring any delivery system and without requiring any source downtime. Additionally, the plasma provides energetic radicals that aid in the etching process. This work will focus on two areas. First, it will focus on experimental collector cleaning and EUV reflectivity restoration. Second, it will focus on developing an understanding of the fundamental processes governing Sn removal. It will be shown that this plasma technique can clean an entire collector optic and restore EUV reflectivity to MLMs without damaging them. Additionally, it will be shown that, within the parameter space explored, the limiting factor in Sn etching is not hydrogen radical flux or SnH4 decomposition but ion energy flux. This will be backed up by experimental measurements, as well as a plasma chemistry model of the radical density and a 3D model of SnH4 transport and redeposition.

Rosat sky survey observations of the eclipsing binary V471 Tauri

NASA Technical Reports Server (NTRS)

Barstow, M. A.; Schmitt, J. H. M. M.; Clemens, J. C.; Pye, J. P.; Denby, M.; Harris, A. W.; Pankiewicz, G. S.

1992-01-01

Rosat observations of the DA white dwarf + K2V binary system V471 Tauri, obtained during the sky survey phase of the mission, are presented. A lower amplitude shorter time-scale variability is seen in both the soft X-ray and EUV bands. This is associated with the white dwarf pulsations previously discovered by Exosat and also observed at optical wavelengths. The minimum in the EUV light curve is found to coincide with the maximum in the optical. This direct comparison of the phases of the optical and EUV pulses confirms the prediction made by an earlier indirect comparison and shows conclusively that the V471 Tau oscillations cannot arise from nonradial g-mode pulsations in the white dwarf. They are argued to be caused by rotation of the white dwarf with accretion-darkened magnetic poles. On the basis of the EUV and optical pulse shapes, the accretion geometry is studied, and it is estimated that the rate of accretion onto the white dwarf is about (4-11) x 10 exp -13 solar mass/yr.

The Geminga Pulsar: Soft X-Ray Variability and an EUVE Observation

NASA Technical Reports Server (NTRS)

Halpern, Jules P.; Martin, Christopher; Marshall, Herman L.; Oliversen, Ronald (Technical Monitor)

2001-01-01

We observed the Geminga pulsar with the EUVE satellite, detecting pulsed emission in the Deep Survey imager. Joint spectral fits of the EUVE flux with ROSAT PSPC data are consistent with thermal plus power-law models in which the thermal component makes the dominant contribution to the soft X-ray flux seen by EUVE and ROSAT. The data are consistent with blackbody emission of T = (4 - 6) x 10(exp 5) K over most of the surface of the star at the measured parallax distance of 160 pc. Although model atmospheres are more realistic, and can fit the data with effective temperatures a factor of 2 lower, current data would not discriminate between these and blackbody models. We also find evidence for variability of Geminga's soft X-ray pulse shape. Narrow dips in the light curve that were present in 1991 had largely disappeared in 1993/1994, causing the pulsed fraction to decline from 32% to 18%. If the dips are attributed to cyclotron resonance scattering by an e1 plasma on closed magnetic field lines, then the process that resupplies that plasma must be variable.

The Geminga Pulsar: Soft X-Ray Variability and an EUVE Observation

NASA Technical Reports Server (NTRS)

Halpern, Jules P.; Martin, Christopher; Marshall, Herman L.

1996-01-01

We observed the Geminga pulsar with the EUVE satellite, detecting pulsed emission in the Deep Survey imager. Joint spectral fits of the EUVE flux with ROSAT PSPC data are consistent with thermal plus power-law models in which the thermal component makes the dominant contribution to the soft X-ray flux seen by EUVE and ROSAT. The data are consistent with blackbody emission of T = (4-6) x 10(exp 5) K over most of the surface of the star at the measured parallax distance of 160 pc. Although model atmospheres are more realistic, and can fit the data with effective temperatures a factor of 2 lower, current data would not discriminate between these and blackbody models. We also find evidence for variability of Geminga's soft X-ray pulse shape. Narrow dips in the light curve that were present in 1991 had largely disappeared in 1993/1994, causing the pulsed fraction to decline from 32% to 18%. If the dips are attributed to cyclotron resonance scattering by an e(+/-) plasma on closed magnetic field lines, then the process that resupplies that plasma must be variable.

Theoretical modeling of PEB procedure on EUV resist using FDM formulation

NASA Astrophysics Data System (ADS)

Kim, Muyoung; Moon, Junghwan; Choi, Joonmyung; Lee, Byunghoon; Jeong, Changyoung; Kim, Heebom; Cho, Maenghyo

2018-03-01

Semiconductor manufacturing industry has reduced the size of wafer for enhanced productivity and performance, and Extreme Ultraviolet (EUV) light source is considered as a promising solution for downsizing. A series of EUV lithography procedures contain complex photo-chemical reaction on photoresist, and it causes technical difficulties on constructing theoretical framework which facilitates rigorous investigation of underlying mechanism. Thus, we formulated finite difference method (FDM) model of post exposure bake (PEB) process on positive chemically amplified resist (CAR), and it involved acid diffusion coupled-deprotection reaction. The model is based on Fick's second law and first-order chemical reaction rate law for diffusion and deprotection, respectively. Two kinetic parameters, diffusion coefficient of acid and rate constant of deprotection, which were obtained by experiment and atomic scale simulation were applied to the model. As a result, we obtained time evolutional protecting ratio of each functional group in resist monomer which can be used to predict resulting polymer morphology after overall chemical reactions. This achievement will be the cornerstone of multiscale modeling which provides fundamental understanding on important factors for EUV performance and rational design of the next-generation photoresist.

High-efficiency spectral purity filter for EUV lithography

DOEpatents

Chapman, Henry N [Livermore, CA

2006-05-23

An asymmetric-cut multilayer diffracts EUV light. A multilayer cut at an angle has the same properties as a blazed grating, and has been demonstrated to have near-perfect performance. Instead of having to nano-fabricate a grating structure with imperfections no greater than several tens of nanometers, a thick multilayer is grown on a substrate and then cut at an inclined angle using coarse and inexpensive methods. Effective grating periods can be produced this way that are 10 to 100 times smaller than those produced today, and the diffraction efficiency of these asymmetric multilayers is higher than conventional gratings. Besides their ease of manufacture, the use of an asymmetric multilayer as a spectral purity filter does not require that the design of an EUV optical system be modified in any way, unlike the proposed use of blazed gratings for such systems.

Interferometric at-wavelength flare characterization of EUV optical systems

DOEpatents

Naulleau, Patrick P.; Goldberg, Kenneth Alan

2001-01-01

The extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) provides the high-accuracy wavefront characterization critical to the development of EUV lithography systems. Enhancing the implementation of the PS/PDI can significantly extend its spatial-frequency measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wavefront and flare. The enhanced technique employs a hybrid spatial/temporal-domain point diffraction interferometer (referred to as the dual-domain PS/PDI) that is capable of suppressing the scattered-reference-light noise that hinders the conventional PS/PDI. Using the dual-domain technique in combination with a flare-measurement-optimized mask and an iterative calculation process for removing flare contribution caused by higher order grating diffraction terms, the enhanced PS/PDI can be used to simultaneously measure both figure and flare in optical systems.

Portable biochip scanner device

DOEpatents

Perov, Alexander; Sharonov, Alexei; Mirzabekov, Andrei D.

2002-01-01

A portable biochip scanner device used to detect and acquire fluorescence signal data from biological microchips (biochips) is provided. The portable biochip scanner device employs a laser for emitting an excitation beam. An optical fiber delivers the laser beam to a portable biochip scanner. A lens collimates the laser beam, the collimated laser beam is deflected by a dichroic mirror and focused by an objective lens onto a biochip. The fluorescence light from the biochip is collected and collimated by the objective lens. The fluorescence light is delivered to a photomultiplier tube (PMT) via an emission filter and a focusing lens. The focusing lens focuses the fluorescence light into a pinhole. A signal output of the PMT is processed and displayed.

MULTI-VIEWPOINT OBSERVATIONS OF A WIDELY DISTRIBUTED SOLAR ENERGETIC PARTICLE EVENT: THE ROLE OF EUV WAVES AND WHITE-LIGHT SHOCK SIGNATURES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kouloumvakos, A.; Patsourakos, S.; Nindos, A.

2016-04-10

On 2012 March 7, two large eruptive events occurred in the same active region within 1 hr from each other. Each consisted of an X-class flare, a coronal mass ejection (CME), an extreme-ultraviolet (EUV) wave, and a shock wave. The eruptions gave rise to a major solar energetic particle (SEP) event observed at widely separated (∼120°) points in the heliosphere. From multi-viewpoint energetic proton recordings we determine the proton release times at STEREO B and A (STB, STA) and the first Lagrange point (L1) of the Sun–Earth system. Using EUV and white-light data, we determine the evolution of the EUVmore » waves in the low corona and reconstruct the global structure and kinematics of the first CME’s shock, respectively. We compare the energetic proton release time at each spacecraft with the EUV waves’ arrival times at the magnetically connected regions and the timing and location of the CME shock. We find that the first flare/CME is responsible for the SEP event at all three locations. The proton release at STB is consistent with arrival of the EUV wave and CME shock at the STB footpoint. The proton release time at L1 was significantly delayed compared to STB. Three-dimensional modeling of the CME shock shows that the particle release at L1 is consistent with the timing and location of the shock’s western flank. This indicates that at L1 the proton release did not occur in low corona but farther away from the Sun. However, the extent of the CME shock fails to explain the SEP event observed at STA. A transport process or a significantly distorted interplanetary magnetic field may be responsible.« less

Microfabrication of through holes in polydimethylsiloxane (PDMS) sheets using a laser plasma EUV source (Conference Presentation)

NASA Astrophysics Data System (ADS)

Makimura, Tetsuya; Urai, Hikari; Niino, Hiroyuki

2017-03-01

Polydimethylsiloxane (PDMS) is a material used for cell culture substrates / bio-chips and micro total analysis systems / lab-on-chips due to its flexibility, chemical / thermo-dynamic stability, bio-compatibility, transparency and moldability. For further development, it is inevitable to develop a technique to fabricate precise three dimensional structures on micrometer-scale at high aspect ratio. In the previous works, we reported a technique for high-quality micromachining of PDMS without chemical modification, by means of photo direct machining using laser plasma EUV sources. In the present work, we have investigated fabrication of through holes. The EUV radiations around 10 nm were generated by irradiation of Ta targets with Nd:YAG laser light (10 ns, 500 mJ/pulse). The generated EUV radiations were focused using an ellipsoidal mirror. It has a narrower incident angle than those in the previous works in order to form a EUV beam with higher directivity, so that higher aspect structures can be fabricated. The focused EUV beam was incident on PDMS sheets with a thickness of 15 micrometers, through holes in a contact mask placed on top of them. Using a contact mask with holes with a diameter of three micrometers, complete through holes with a diameter of two micrometers are fabricated in the PDMS sheet. Using a contact mask with two micrometer holes, however, ablation holes almost reaches to the back side of the PDMS sheet. The fabricated structures can be explained in terms of geometrical optics. Thus, we have developed a technique for micromachining of PDMS sheets at high aspect ratios.

Advanced EUV mask and imaging modeling

NASA Astrophysics Data System (ADS)

Evanschitzky, Peter; Erdmann, Andreas

2017-10-01

The exploration and optimization of image formation in partially coherent EUV projection systems with complex source shapes requires flexible, accurate, and efficient simulation models. This paper reviews advanced mask diffraction and imaging models for the highly accurate and fast simulation of EUV lithography systems, addressing important aspects of the current technical developments. The simulation of light diffraction from the mask employs an extended rigorous coupled wave analysis (RCWA) approach, which is optimized for EUV applications. In order to be able to deal with current EUV simulation requirements, several additional models are included in the extended RCWA approach: a field decomposition and a field stitching technique enable the simulation of larger complex structured mask areas. An EUV multilayer defect model including a database approach makes the fast and fully rigorous defect simulation and defect repair simulation possible. A hybrid mask simulation approach combining real and ideal mask parts allows the detailed investigation of the origin of different mask 3-D effects. The image computation is done with a fully vectorial Abbe-based approach. Arbitrary illumination and polarization schemes and adapted rigorous mask simulations guarantee a high accuracy. A fully vectorial sampling-free description of the pupil with Zernikes and Jones pupils and an optimized representation of the diffraction spectrum enable the computation of high-resolution images with high accuracy and short simulation times. A new pellicle model supports the simulation of arbitrary membrane stacks, pellicle distortions, and particles/defects on top of the pellicle. Finally, an extension for highly accurate anamorphic imaging simulations is included. The application of the models is demonstrated by typical use cases.

Spectroscopy of Highly Charged Tin Ions for AN Extreme Ultraviolet Light Source for Lithography

NASA Astrophysics Data System (ADS)

Torretti, Francesco; Windberger, Alexander; Ubachs, Wim; Hoekstra, Ronnie; Versolato, Oscar; Ryabtsev, Alexander; Borschevsky, Anastasia; Berengut, Julian; Crespo Lopez-Urrutia, Jose

2017-06-01

Laser-produced tin plasmas are the prime candidates for the generation of extreme ultraviolet (EUV) light around 13.5 nm in nanolithographic applications. This light is generated primarily by atomic transitions in highly charged tin ions: Sn^{8+}-Sn^{14+}. Due to the electronic configurations of these charge states, thousands of atomic lines emit around 13.5 nm, clustered in a so-called unresolved transition array. As a result, accurate line identification becomes difficult in this regime. Nevertheless, this issue can be circumvented if one turns to the optical: with far fewer atomic states, only tens of transitions take place and the spectra can be resolved with far more ease. We have investigated optical emission lines in an electron-beam-ion-trap (EBIT), where we managed to charge-state resolve the spectra. Based on this technique and on a number of different ab initio techniques for calculating the level structure, the optical spectra could be assigned [1,2]. As a conclusion the assignments of EUV transitions in the literature require corrections. The EUV and optical spectra are measured simultaneously in the controlled conditions of the EBIT as well as in a droplet-based laser-produced plasma source providing information on the contribution of Sn^{q+} charge states to the EUV emission. [1] A. Windberger, F. Torretti, A. Borschevsky, A. Ryabtsev, S. Dobrodey, H. Bekker, E. Eliav, U. Kaldor, W. Ubachs, R. Hoekstra, J.R. Crespo Lopez-Urrutia, O.O. Versolato, Analysis of the fine structure of Sn^{11+} - Sn^{14+} ions by optical spectroscopy in an electron beam ion trap, Phys. Rev. A 94, 012506 (2016). [2] F. Torretti, A. Windberger, A. Ryabtsev, S. Dobrodey, H. Bekker, W. Ubachs, R. Hoekstra, E.V. Kahl, J.C. Berengut, J.R. Crespo Lopez-Urrutia, O.O. Versolato, Optical spectroscopy of complex open 4d-shell ions Sn^{7+} - Sn^{10+}, arXiv:1612.00747

The Longitudinal Properties of a Solar Energetic Particle Event Investigated Using Modern Solar Imaging

NASA Technical Reports Server (NTRS)

Rouillard, A. P.; Sheeley, N.R. Jr.; Tylka, A.; Vourlidas, A.; Ng, C. K.; Rakowski, C.; Cohen, C. M. S.; Mewaldt, R. A.; Mason, G. M.; Reames, D.;

Emission spectra of photoionized plasmas induced by intense EUV pulses: Experimental and theoretical investigations

NASA Astrophysics Data System (ADS)

Saber, Ismail; Bartnik, Andrzej; Skrzeczanowski, Wojciech; Wachulak, Przemysław; Jarocki, Roman; Fiedorowicz, Henryk

2017-03-01

Experimental measurements and numerical modeling of emission spectra in photoionized plasma in the ultraviolet and visible light (UV/Vis) range for noble gases have been investigated. The photoionized plasmas were created using laser-produced plasma (LPP) extreme ultraviolet (EUV) source. The source was based on a gas puff target; irradiated with 10ns/10J/10Hz Nd:YAG laser. The EUV radiation pulses were collected and focused using grazing incidence multifoil EUV collector. The laser pulses were focused on a gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of gases resulted in a formation of low temperature photoionized plasmas emitting radiation in the UV/Vis spectral range. Atomic photoionized plasmas produced this way consisted of atomic and ionic with various ionization states. The most dominated observed spectral lines originated from radiative transitions in singly charged ions. To assist in a theoretical interpretation of the measured spectra, an atomic code based on Cowan's programs and a collisional-radiative PrismSPECT code have been used to calculate the theoretical spectra. A comparison of the calculated spectral lines with experimentally obtained results is presented. Electron temperature in plasma is estimated using the Boltzmann plot method, by an assumption that a local thermodynamic equilibrium (LTE) condition in the plasma is validated in the first few ionization states. A brief discussion for the measured and computed spectra is given.

Alignment of a multilayer-coated imaging system using extreme ultraviolet Foucault and Ronchi interferometric testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ray-Chaudhuri, A.K.; Ng, W.; Cerrina, F.

1995-11-01

Multilayer-coated imaging systems for extreme ultraviolet (EUV) lithography at 13 nm represent a significant challenge for alignment and characterization. The standard practice of utilizing visible light interferometry fundamentally provides an incomplete picture since this technique fails to account for phase effects induced by the multilayer coating. Thus the development of optical techniques at the functional EUV wavelength is required. We present the development of two EUV optical tests based on Foucault and Ronchi techniques. These relatively simple techniques are extremely sensitive due to the factor of 50 reduction in wavelength. Both techniques were utilized to align a Mo--Si multilayer-coated Schwarzschildmore » camera. By varying the illumination wavelength, phase shift effects due to the interplay of multilayer coating and incident angle were uniquely detected. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}« less

Charge coupled devices vs. microchannel plates in the extreme and far ultraviolet - A comparison based on the latest laboratory measurements

NASA Technical Reports Server (NTRS)

Vallerga, J.; Lampton, M.

1988-01-01

While microchannel plates (MCPs) have been established as imaging photon counters in the EUV and FUV for some years, CCDs are associated with low light level sensing at visible and near-IR wavelengths. Attention is presently given to recent proposals for CCDs' use as EUV and FUV detectors with quantum efficiencies sometimes exceeding those of MCPs; quantum resolution, format size, dynamic range, and long-term stability are also used as bases of comparison, for the cases of both space-based astronomical and spectroscopic applications.

Heating and dynamics of two flare loop systems observed by AIA and EIS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y.; Ding, M. D.; Qiu, J., E-mail: yingli@nju.edu.cn

2014-02-01

We investigate heating and evolution of flare loops in a C4.7 two-ribbon flare on 2011 February 13. From Solar Dynamics Observatory/Atmospheric Imaging Assembly (AIA) imaging observations, we can identify two sets of loops. Hinode/EUV Imaging Spectrometer (EIS) spectroscopic observations reveal blueshifts at the feet of both sets of loops. The evolution and dynamics of the two sets are quite different. The first set of loops exhibits blueshifts for about 25 minutes followed by redshifts, while the second set shows stronger blueshifts, which are maintained for about one hour. The UV 1600 observation by AIA also shows that the feet ofmore » the second set of loops brighten twice. These suggest that continuous heating may be present in the second set of loops. We use spatially resolved UV light curves to infer heating rates in the few tens of individual loops comprising the two loop systems. With these heating rates, we then compute plasma evolution in these loops with the 'enthalpy-based thermal evolution of loops' model. The results show that, for the first set of loops, the synthetic EUV light curves from the model compare favorably with the observed light curves in six AIA channels and eight EIS spectral lines, and the computed mean enthalpy flow velocities also agree with the Doppler shift measurements by EIS. For the second set of loops modeled with twice-heating, there are some discrepancies between modeled and observed EUV light curves in low-temperature bands, and the model does not fully produce the prolonged blueshift signatures as observed. We discuss possible causes for the discrepancies.« less

Maskless, reticle-free, lithography

DOEpatents

Ceglio, N.M.; Markle, D.A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, Natale M.; Markle, David A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

Soft x-ray imaging with incoherent sources

NASA Astrophysics Data System (ADS)

Wachulak, P.; Torrisi, A.; Ayele, M.; Bartnik, A.; Czwartos, J.; Wegrzyński, Ł.; Fok, T.; Parkman, T.; Vondrová, Š.; Turnová, J.; Odstrcil, M.; Fiedorowicz, H.

2017-05-01

In this work we present experimental, compact desk-top SXR microscope, the EUV microscope which is at this stage a technology demonstrator, and finally, the SXR contact microscope. The systems are based on laser-plasma EUV and SXR sources, employing a double stream gas puff target. The EUV and SXR full field microscopes, operating at 13.8 nm and 2.88 nm wavelengths, respectively, are capable of imaging nanostructures with a sub-50 nm spatial resolution with relatively short (seconds) exposure times. The SXR contact microscope operates in the "water-window" spectral range, to produce an imprint of the internal structure of the sample in a thin layer of SXR light sensitive photoresist. Applications of such desk-top EUV and SXR microscopes for studies of variety of different samples - test objects for resolution assessment and other objects such as carbon membranes, DNA plasmid samples, organic and inorganic thin layers, diatoms, algae and carcinoma cells, are also presented. Details about the sources, the microscopes as well as the imaging results for various objects will be presented and discussed. The development of such compact imaging systems may be important to the new research related to biological, material science and nanotechnology applications.

Multispectral Scanner for Monitoring Plants

NASA Technical Reports Server (NTRS)

Gat, Nahum

2004-01-01

A multispectral scanner has been adapted to capture spectral images of living plants under various types of illumination for purposes of monitoring the health of, or monitoring the transfer of genes into, the plants. In a health-monitoring application, the plants are illuminated with full-spectrum visible and near infrared light and the scanner is used to acquire a reflected-light spectral signature known to be indicative of the health of the plants. In a gene-transfer- monitoring application, the plants are illuminated with blue or ultraviolet light and the scanner is used to capture fluorescence images from a green fluorescent protein (GFP) that is expressed as result of the gene transfer. The choice of wavelength of the illumination and the wavelength of the fluorescence to be monitored depends on the specific GFP.

State-of-the-art EUV materials and processes for the 7nm node and beyond

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Meeuwissen, Marieke; Yildirim, Oktay; Custers, Rolf; Hoefnagels, Rik; Rispens, Gijsbert; Vockenhuber, Michaela; Mochi, Iacopo; Fallica, Roberto; Tasdemir, Zuhal; Ekinci, Yasin

2017-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) being the most likely candidate to manufacture electronic devices for future technology nodes is to be introduced in high volume manufacturing (HVM) at the 7 nm logic node, at least at critical lithography levels. With this impending introduction, it is clear that excellent resist performance at ultra-high printing resolutions (below 20 nm line/space L/S) is ever more pressing. Nonetheless, EUVL has faced many technical challenges towards this paradigm shift to a new lithography wavelength platform. Since the inception of chemically amplified resists (CARs) they have been the base upon which state-of-the art photoresist technology has been developed from. Resist performance as measured in terms of printing resolution (R), line edge roughness (LER), sensitivity (D or exposure dose) and exposure latitude (EL) needs to be improved but there are well known trade-off relationships (LRS trade-off) among these parameters for CARs that hamper their simultaneous enhancement. Here, we present some of the most promising EUVL materials tested by EUV interference lithography (EUV-IL) with the aim of resolving features down to 11 nm half-pitch (HP), while focusing on resist performance at 16 and 13 nm HP as needed for the 7 and 5 nm node, respectively. EUV-IL has enabled the characterization and development of new resist materials before commercial EUV exposure tools become available and is therefore a powerful research and development tool. With EUV-IL, highresolution periodic images can be printed by the interference of two or more spatially coherent beams through a transmission-diffraction grating mask. For this reason, our experiments have been performed by EUV-IL at Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI). Having the opportunity to test hundreds of EUVL materials from vendors and research partners from all over the world, PSI is able to give a global update on some of the most promising materials tested.

Analysis of erythemally effective UV radiation at the Mendel Station, James Ross Island in the period of 2006-2007

NASA Astrophysics Data System (ADS)

Laska, K.; Prosek, P.; Budik, L.; Budikova, M.

2009-04-01

The results of global solar and erythemally effective ultraviolet (EUV) radiation measurements are presented. The radiation data were collected within the period of 2006-2007 at the Czech Antarctic station J. G. Mendel, James Ross Island (63°48'S, 57°53'W). Global solar radiation was measured by a Kipp&Zonen CM11 pyranometer. EUV radiation was measured according to the McKinley and Diffey Erythemal Action Spectrum with a Solar Light broadband UV-Biometer Model 501A. The effects of stratospheric ozone concentration and cloudiness (estimated as cloud impact factor from global solar radiation) on the intensity of incident EUV radiation were calculated by a non-linear regression model. The total ozone content (TOC) and cloud/surface reflectivity derived from satellite-based measurements were applied into the model for elimination of the uncertainties in measured ozone values. There were two input data of TOC used in the model. The first were taken from the Dobson spectrophotometer measurements (Argentinean Antarctic station Marambio), the second was acquired for geographical coordinates of the Mendel Station from the EOS Aura Ozone Monitoring Instrument and V8.5 algorithm. Analysis of measured EUV data showed that variable cloudiness affected rather short-term fluctuations of the radiation fluxes, while ozone declines caused long-term UV radiation increase in the second half of the year. The model predicted about 98 % variability of the measured EUV radiation. The residuals between measured and modeled EUV radiation intensities were evaluated separately for the above-specified two TOC datasets, parts of seasons and cloud impact factor (cloudiness). The mean average prediction error was used for model validation according to the cloud impact factor and satellite-based reflectivity data.

High throughput optical scanner

DOEpatents

Basiji, David A.; van den Engh, Gerrit J.

2001-01-01

A scanning apparatus is provided to obtain automated, rapid and sensitive scanning of substrate fluorescence, optical density or phosphorescence. The scanner uses a constant path length optical train, which enables the combination of a moving beam for high speed scanning with phase-sensitive detection for noise reduction, comprising a light source, a scanning mirror to receive light from the light source and sweep it across a steering mirror, a steering mirror to receive light from the scanning mirror and reflect it to the substrate, whereby it is swept across the substrate along a scan arc, and a photodetector to receive emitted or scattered light from the substrate, wherein the optical path length from the light source to the photodetector is substantially constant throughout the sweep across the substrate. The optical train can further include a waveguide or mirror to collect emitted or scattered light from the substrate and direct it to the photodetector. For phase-sensitive detection the light source is intensity modulated and the detector is connected to phase-sensitive detection electronics. A scanner using a substrate translator is also provided. For two dimensional imaging the substrate is translated in one dimension while the scanning mirror scans the beam in a second dimension. For a high throughput scanner, stacks of substrates are loaded onto a conveyor belt from a tray feeder.

Global Plasmaspheric Imaging: A New "Light" Focusing on Familiar Questions

NASA Technical Reports Server (NTRS)

Adrian, M. L.; Six, N. Frank (Technical Monitor)

2002-01-01

Until recently plasmaspheric physics, for that matter, magnetospheric physics as a whole, has relied primarily on single point in-situ measurement, theory, modeling, and a considerable amount of extrapolation in order to envision the global structure of the plasmasphere. This condition changed with the launch of the IMAGE satellite in March 2000. Using the Extreme Ultraviolet (EUV) imager on WAGE, we can now view the global structure of the plasmasphere bathed in the glow of resonantly scattered 30.4 nm radiation allowing the space physics community to view the dynamics of this global structure as never before. This talk will: (1) define the plasmasphere from the perspective of plasmaspheric physics prior to March 2000; (2) present a review of EUV imaging optics and the IMAGE mission; and focus on efforts to understand an old and familiar feature of plasmaspheric physics, embedded plasmaspheric density troughs, in this new global light with the assistance of forward modeling.

Unbiased roughness measurements: the key to better etch performance

NASA Astrophysics Data System (ADS)

Liang, Andrew; Mack, Chris; Sirard, Stephen; Liang, Chen-wei; Yang, Liu; Jiang, Justin; Shamma, Nader; Wise, Rich; Yu, Jengyi; Hymes, Diane

2018-03-01

Edge placement error (EPE) has become an increasingly critical metric to enable Moore's Law scaling. Stochastic variations, as characterized for lines by line width roughness (LWR) and line edge roughness (LER), are dominant factors in EPE and known to increase with the introduction of EUV lithography. However, despite recommendations from ITRS, NIST, and SEMI standards, the industry has not agreed upon a methodology to quantify these properties. Thus, differing methodologies applied to the same image often result in different roughness measurements and conclusions. To standardize LWR and LER measurements, Fractilia has developed an unbiased measurement that uses a raw unfiltered line scan to subtract out image noise and distortions. By using Fractilia's inverse linescan model (FILM) to guide development, we will highlight the key influences of roughness metrology on plasma-based resist smoothing processes. Test wafers were deposited to represent a 5 nm node EUV logic stack. The patterning stack consists of a core Si target layer with spin-on carbon (SOC) as the hardmask and spin-on glass (SOG) as the cap. Next, these wafers were exposed through an ASML NXE 3350B EUV scanner with an advanced chemically amplified resist (CAR). Afterwards, these wafers were etched through a variety of plasma-based resist smoothing techniques using a Lam Kiyo conductor etch system. Dense line and space patterns on the etched samples were imaged through advanced Hitachi CDSEMs and the LER and LWR were measured through both Fractilia and an industry standard roughness measurement software. By employing Fractilia to guide plasma-based etch development, we demonstrate that Fractilia produces accurate roughness measurements on resist in contrast to an industry standard measurement software. These results highlight the importance of subtracting out SEM image noise to obtain quicker developmental cycle times and lower target layer roughness.

Hierarchical, Three-Dimensional Measurement System for Crime Scene Scanning.

PubMed

Marcin, Adamczyk; Maciej, Sieniło; Robert, Sitnik; Adam, Woźniak

2017-07-01

We present a new generation of three-dimensional (3D) measuring systems, developed for the process of crime scene documentation. This measuring system facilitates the preparation of more insightful, complete, and objective documentation for crime scenes. Our system reflects the actual requirements for hierarchical documentation, and it consists of three independent 3D scanners: a laser scanner for overall measurements, a situational structured light scanner for more minute measurements, and a detailed structured light scanner for the most detailed parts of tscene. Each scanner has its own spatial resolution, of 2.0, 0.3, and 0.05 mm, respectively. The results of interviews we have conducted with technicians indicate that our developed 3D measuring system has significant potential to become a useful tool for forensic technicians. To ensure the maximum compatibility of our measuring system with the standards that regulate the documentation process, we have also performed a metrological validation and designated the maximum permissible length measurement error E MPE for each structured light scanner. In this study, we present additional results regarding documentation processes conducted during crime scene inspections and a training session. © 2017 American Academy of Forensic Sciences.

Spatial discrimination of persistent EUV oscillations in a hot waning light bridge

NASA Astrophysics Data System (ADS)

Walsh, D.; Yuan, R. W.

2016-10-01

A light bridge is usually formed as a lower atmospheric structure in nascent or decaying sunspots; it divides the umbra into separate regions. Convection, which is normally suppressed by a sunspot's strong magnetic field, is partially restored and upflows are usually observed at the spine of a bridge with downflows (or return flows) at the two flanks. This study outlines observations a light bridge unusually sustained at coronal temperatures. Viewed in AR11520 on 12th July 2012 by the High Resolution Coronal Imager (HiC) and AIA/SDO, the EUV emission intensity exhibits two persistent oscillations. The approximate 5-minute oscillations are distributed along the spine of the light bridge whereas sub-minute oscillations are distinctively co-spatial along each bridge flank (though there is a distinct time-lag between them). This indicates strongly that (i) the oscillatory driver at the flanks is connected with the collective interactions between magnetic fields of the bridge and the sunspot itself and (ii) the internal magnetic structure of the bridge is twisted. The presentation will outline the distinct oscillatory maps generated and provide insight into determining the magnetic morphology until the bridge wans several hours later.

Solar Coronal Jets Extending to High Altitudes Observed during the 2017 August 21 Total Eclipse

NASA Astrophysics Data System (ADS)

Hanaoka, Yoichiro; Hasuo, Ryuichi; Hirose, Tsukasa; Ikeda, Akiko C.; Ishibashi, Tsutomu; Manago, Norihiro; Masuda, Yukio; Morita, Sakuhiro; Nakazawa, Jun; Ohgoe, Osamu; Sakai, Yoshiaki; Sasaki, Kazuhiro; Takahashi, Koichi; Toi, Toshiyuki

2018-06-01

Coronal jets, which extend from the solar surface to beyond 2 R ⊙, were observed in the polar coronal hole regions during the total solar eclipse on 2017 August 21. In a time-series of white-light images of the corona spanning 70 minutes taken with our multi-site observations of this eclipse, six jets were found as narrow structures upwardly ejected with an apparent speed of about 450 km s‑1 in polar plumes. On the other hand, extreme-ultraviolet (EUV) images taken with the Atmospheric Image Assembly of the Solar Dynamics Observatory show that all of the eclipse jets were preceded by EUV jets. Conversely, all the EUV jets whose brightnesses are comparable to ordinary soft X-ray jets and that occurred in the polar regions near the eclipse period, were observed as eclipse jets. These results suggest that ordinary polar jets generally reach high altitudes and escape from the Sun as part of the solar wind.

Extreme ultraviolet interferometry of warm dense matter in laser plasmas.

PubMed

Gartside, L M R; Tallents, G J; Rossall, A K; Wagenaars, E; Whittaker, D S; Kozlová, M; Nejdl, J; Sawicka, M; Polan, J; Kalal, M; Rus, B

2010-11-15

We demonstrate that interferometric probing with extreme ultraviolet (EUV) laser light enables determination of the degree of ionization of the "warm dense matter" produced between the critical and ablation surfaces of laser plasmas. Interferometry has been utilized to measure both transmission and phase information for an EUV laser beam at the photon energy of 58.5 eV, probing longitudinally through laser-irradiated plastic (parylene-N) targets (thickness 350 nm) irradiated by a 300 ps duration pulse of wavelength 438 nm and peak irradiance 10(12) W cm(-2). The transmission of the EUV probe beam provides a measure of the rate of target ablation, as ablated plasma becomes close to transparent when the photon energy is less than the ionization energy of the predominant ion species. We show that refractive indices η below the solid parylene N (η(solid) = 0.946) and expected plasma values are produced in the warm dense plasma created by laser irradiation due to bound-free absorption in C(+).

Modeling of thermomechanical changes of extreme-ultraviolet mask and their dependence on absorber variation

NASA Astrophysics Data System (ADS)

Ban, Chung-Hyun; Park, Eun-Sang; Park, Jae-Hun; Oh, Hye-Keun

2018-06-01

Thermal and structural deformation of extreme-ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness requirements. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the masks rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. The use of very thick low-thermal-expansion substrate materials (LTEMs) may reduce energy absorption, but they do not completely eliminate mask deformation. Therefore, it is necessary to predict and optimize the effects of energy transferred from the extreme-ultraviolet (EUV) light source and the resultant patterns of structured EUV masks with complex multilayers. Our study shows that heat accumulates in the masks as exposure progresses. It has been found that a higher absorber ratio (pattern density) applied to the patterning of EUV masks exacerbates the problem, especially in masks with more complex patterns.

Plasma Surface Interactions Common to Advanced Fusion Wall Materials and EUV Lithography - Lithium and Tin

NASA Astrophysics Data System (ADS)

Ruzic, D. N.; Alman, D. A.; Jurczyk, B. E.; Stubbers, R.; Coventry, M. D.; Neumann, M. J.; Olczak, W.; Qiu, H.

2004-09-01

Advanced plasma facing components (PFCs) are needed to protect walls in future high power fusion devices. In the semiconductor industry, extreme ultraviolet (EUV) sources are needed for next generation lithography. Lithium and tin are candidate materials in both areas, with liquid Li and Sn plasma material interactions being critical. The Plasma Material Interaction Group at the University of Illinois is leveraging liquid metal experimental and computational facilities to benefit both fields. The Ion surface InterAction eXperiment (IIAX) has measured liquid Li and Sn sputtering, showing an enhancement in erosion with temperature for light ion bombardment. Surface Cleaning of Optics by Plasma Exposure (SCOPE) measures erosion and damage of EUV mirror samples, and tests cleaning recipes with a helicon plasma. The Flowing LIquid surface Retention Experiment (FLIRE) measures the He and H retention in flowing liquid metals, with retention coefficients varying between 0.001 at 500 eV to 0.01 at 4000 eV.

EUV focus sensor: design and modeling

NASA Astrophysics Data System (ADS)

Goldberg, Kenneth A.; Teyssier, Maureen E.; Liddle, J. Alexander

2005-05-01

We describe performance modeling and design optimization of a prototype EUV focus sensor (FS) designed for use with existing 0.3-NA EUV projection-lithography tools. At 0.3-NA and 13.5-nm wavelength, the depth of focus shrinks to 150 nm increasing the importance of high-sensitivity focal-plane detection tools. The FS is a free-standing Ni grating structure that works in concert with a simple mask pattern of regular lines and spaces at constant pitch. The FS pitch matches that of the image-plane aerial-image intensity: it transmits the light with high efficiency when the grating is aligned with the aerial image laterally and longitudinally. Using a single-element photodetector, to detect the transmitted flux, the FS is scanned laterally and longitudinally so the plane of peak aerial-image contrast can be found. The design under consideration has a fixed image-plane pitch of 80-nm, with aperture widths of 12-40-nm (1-3 wave-lengths), and aspect ratios of 2-8. TEMPEST-3D is used to model the light transmission. Careful attention is paid to the annular, partially coherent, unpolarized illumination and to the annular pupil of the Micro-Exposure Tool (MET) optics for which the FS is designed. The system design balances the opposing needs of high sensitivity and high throughput opti-mizing the signal-to-noise ratio in the measured intensity contrast.

EUV Focus Sensor: Design and Modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldberg, Kenneth A.; Teyssier, Maureen E.; Liddle, J. Alexander

We describe performance modeling and design optimization of a prototype EUV focus sensor (FS) designed for use with existing 0.3-NA EUV projection-lithography tools. At 0.3-NA and 13.5-nm wavelength, the depth of focus shrinks to 150 nm increasing the importance of high-sensitivity focal-plane detection tools. The FS is a free-standing Ni grating structure that works in concert with a simple mask pattern of regular lines and spaces at constant pitch. The FS pitch matches that of the image-plane aerial-image intensity: it transmits the light with high efficiency when the grating is aligned with the aerial image laterally and longitudinally. Using amore » single-element photodetector, to detect the transmitted flux, the FS is scanned laterally and longitudinally so the plane of peak aerial-image contrast can be found. The design under consideration has a fixed image-plane pitch of 80-nm, with aperture widths of 12-40-nm (1-3 wavelengths), and aspect ratios of 2-8. TEMPEST-3D is used to model the light transmission. Careful attention is paid to the annular, partially coherent, unpolarized illumination and to the annular pupil of the Micro-Exposure Tool (MET) optics for which the FS is designed. The system design balances the opposing needs of high sensitivity and high throughput optimizing the signal-to-noise ratio in the measured intensity contrast.« less

Structured-light 3D scanner in use to assess the human body posture in physical therapy - a pilot study.

PubMed

Kurzydło, Wojciech; Stach, Beata; Bober, Aleksandra; Wodzińska, Mariola; Długosz, Mirosława M

2014-01-01

The main goal of this study was to asses the possibility of using mass production structured-light 3d scanner to asses human body posture. The study was conducted on a healthy 23 year old volunteer and a lay-figure. The experiment consisted of 28 3D scans, divided into three separate tests. The largest deviation observed in the first two trials was 24.42 mm. While the largest deviation observed in the third trial was 49.91 mm. Data obtained with the mass production structured-light 3d scanner may have comparable or better performance than commercially available systems for the assessment of BP.

PePSS - A portable sky scanner for measuring extremely low night-sky brightness

NASA Astrophysics Data System (ADS)

Kocifaj, Miroslav; Kómar, Ladislav; Kundracik, František

2018-05-01

A new portable sky scanner designed for low-light-level detection at night is developed and employed in night sky brightness measurements in a rural region. The fast readout, adjustable sensitivity and linear response guaranteed in 5-6 orders of magnitude makes the device well suited for narrow-band photometry in both dark areas and bright urban and suburban environments. Quasi-monochromatic night-sky brightness data are advantageous in the accurate characterization of spectral power distribution of scattered and emitted light and, also allows for the possibility to retrieve light output patterns from whole-city light sources. The sky scanner can operate in both night and day regimes, taking advantage of the complementarity of both radiance data types. Due to its inherent very high sensitivity the photomultiplier tube could be used in night sky radiometry, while the spectrometer-equipped system component capable of detecting elevated intensities is used in daylight monitoring. Daylight is a source of information on atmospheric optical properties that in turn are necessary in processing night sky radiances. We believe that the sky scanner has the potential to revolutionize night-sky monitoring systems.

Structured light stereo catadioptric scanner based on a spherical mirror

NASA Astrophysics Data System (ADS)

Barone, S.; Neri, P.; Paoli, A.; Razionale, A. V.

2018-08-01

The present paper describes the development and characterization of a structured light stereo catadioptric scanner for the omnidirectional reconstruction of internal surfaces. The proposed approach integrates two digital cameras, a multimedia projector and a spherical mirror, which is used to project the structured light patterns generated by the light emitter and, at the same time, to reflect into the cameras the modulated fringe patterns diffused from the target surface. The adopted optical setup defines a non-central catadioptric system, thus relaxing any geometrical constraint in the relative placement between optical devices. An analytical solution for the reflection on a spherical surface is proposed with the aim at modelling forward and backward projection tasks for a non-central catadioptric setup. The feasibility of the proposed active catadioptric scanner has been verified by reconstructing various target surfaces. Results demonstrated a great influence of the target surface distance from the mirror's centre on the measurement accuracy. The adopted optical configuration allows the definition of a metrological 3D scanner for surfaces disposed within 120 mm from the mirror centre.

Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light

DOEpatents

Menoni, Carmen S [Fort Collins, CO; Rocca, Jorge J [Fort Collins, CO; Vaschenko, Georgiy [San Diego, CA; Bloom, Scott [Encinitas, CA; Anderson, Erik H [El Cerrito, CA; Chao, Weilun [El Cerrito, CA; Hemberg, Oscar [Stockholm, SE

2011-04-26

Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.

Integrated Electro-optical Laser-Beam Scanners

NASA Technical Reports Server (NTRS)

Boord, Warren T.

1990-01-01

Scanners using solid-state devices compact, consume little power, and have no moving parts. Integrated electro-optical laser scanner, in conjunction with external lens, points outgoing beam of light in any number of different directions, depending on number of upper electrodes. Offers beam-deflection angles larger than those of acousto-optic scanners. Proposed for such diverse applications as nonimpact laser printing, color imaging, ranging, barcode reading, and robotic vision.

Simultaneous Extreme-Ultraviolet Explorer and Optical Observations of Ad Leonis: Evidence for Large Coronal Loops and the Neupert Effect in Stellar Flares

NASA Technical Reports Server (NTRS)

Hawley, Suzanne L.; Fisher, George H.; Simon, Theodore; Cully, Scott L.; Deustua, Susana E.; Jablonski, Marek; Johns-Krull, Christopher; Pettersen, Bjorn R.; Smith, Verne; Spiesman, William J.;

On numerical reconstructions of lithographic masks in DUV scatterometry

NASA Astrophysics Data System (ADS)

Henn, M.-A.; Model, R.; Bär, M.; Wurm, M.; Bodermann, B.; Rathsfeld, A.; Gross, H.

2009-06-01

The solution of the inverse problem in scatterometry employing deep ultraviolet light (DUV) is discussed, i.e. we consider the determination of periodic surface structures from light diffraction patterns. With decreasing dimensions of the structures on photo lithography masks and wafers, increasing demands on the required metrology techniques arise. Scatterometry as a non-imaging indirect optical method is applied to periodic line structures in order to determine the sidewall angles, heights, and critical dimensions (CD), i.e., the top and bottom widths. The latter quantities are typically in the range of tens of nanometers. All these angles, heights, and CDs are the fundamental figures in order to evaluate the quality of the manufacturing process. To measure those quantities a DUV scatterometer is used, which typically operates at a wavelength of 193 nm. The diffraction of light by periodic 2D structures can be simulated using the finite element method for the Helmholtz equation. The corresponding inverse problem seeks to reconstruct the grating geometry from measured diffraction patterns. Fixing the class of gratings and the set of measurements, this inverse problem reduces to a finite dimensional nonlinear operator equation. Reformulating the problem as an optimization problem, a vast number of numerical schemes can be applied. Our tool is a sequential quadratic programing (SQP) variant of the Gauss-Newton iteration. In a first step, in which we use a simulated data set, we investigate how accurate the geometrical parameters of an EUV mask can be reconstructed, using light in the DUV range. We then determine the expected uncertainties of geometric parameters by reconstructing from simulated input data perturbed by noise representing the estimated uncertainties of input data. In the last step, we use the measurement data obtained from the new DUV scatterometer at PTB to determine the geometrical parameters of a typical EUV mask with our reconstruction algorithm. The results are compared to the outcome of investigations with two alternative methods namely EUV scatterometry and SEM measurements.

Accuracy of complete-arch model using an intraoral video scanner: An in vitro study.

PubMed

Jeong, Il-Do; Lee, Jae-Jun; Jeon, Jin-Hun; Kim, Ji-Hwan; Kim, Hae-Young; Kim, Woong-Chul

2016-06-01

Information on the accuracy of intraoral video scanners for long-span areas is limited. The purpose of this in vitro study was to evaluate and compare the trueness and precision of an intraoral video scanner, an intraoral still image scanner, and a blue-light scanner for the production of digital impressions. Reference scan data were obtained by scanning a complete-arch model. An identical model was scanned 8 times using an intraoral video scanner (CEREC Omnicam; Sirona) and an intraoral still image scanner (CEREC Bluecam; Sirona), and stone casts made from conventional impressions of the same model were scanned 8 times with a blue-light scanner as a control (Identica Blue; Medit). Accuracy consists of trueness (the extent to which the scan data differ from the reference scan) and precision (the similarity of the data from multiple scans). To evaluate precision, 8 scans were superimposed using 3-dimensional analysis software; the reference scan data were then superimposed to determine the trueness. Differences were analyzed using 1-way ANOVA and post hoc Tukey HSD tests (α=.05). Trueness in the video scanner group was not significantly different from that in the control group. However, the video scanner group showed significantly lower values than those of the still image scanner group for all variables (P<.05), except in tolerance range. The root mean square, standard deviations, and mean negative precision values for the video scanner group were significantly higher than those for the other groups (P<.05). Digital impressions obtained by the intraoral video scanner showed better accuracy for long-span areas than those captured by the still image scanner. However, the video scanner was less accurate than the laboratory scanner. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.

PubMed

Toyosugi, N; Yamada, H; Minkov, D; Morita, M; Yamaguchi, T; Imai, S

2007-03-01

The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To clarify the applicability of these soft X-ray and EUV sources, the total TR power has been determined. A TR experiment was performed using a 385 nm-thick Al foil target in MIRRORCLE-6X. The angular distribution of the emitted power was measured using a detector assembly based on an NE102 scintillator, an optical bundle and a photomultiplier. The maximal measured total TR power for MIRRORCLE-6X is P(max) approximately equal 2.95 mW at full power operation. Introduction of an analytical expression for the lifetime of the electron beam allows calculation of the emitted TR power by a tabletop synchrotron light source. Using the above measurement result, and the theoretically determined ratio between the TR power for MIRRORCLE-6X and MIRRORCLE-20SX, the total TR power for MIRRORCLE-20SX can be obtained. The one-foil TR target thickness is optimized for the 20 MeV electron energy. P(max) approximately equal 810 mW for MIRRORCLE-20SX is obtained with a single foil of 240 nm-thick Be target. The emitted bremsstrahlung is negligible with respect to the emitted TR for optimized TR targets. From a theoretically known TR spectrum it is concluded that MIRRORCLE-20SX can emit 150 mW of photons with E > 500 eV, which makes it applicable as a source for performing X-ray lithography. The average wavelength, \\overline\\lambda = 13.6 nm, of the TR emission of MIRRORCLE-20SX, with a 200 nm Al target, could provide of the order of 1 W EUV.

Extreme UV induced dissociation of amorphous solid water and crystalline water bilayers on Ru(0001)

NASA Astrophysics Data System (ADS)

Liu, Feng; Sturm, J. M.; Lee, Chris J.; Bijkerk, Fred

2016-04-01

The extreme ultraviolet (EUV, λ = 13.5 nm) induced dissociation of water layers on Ru(0001) was investigated. We irradiated amorphous and crystalline water layers on a Ru crystal with EUV light, and measured the surface coverage of remaining water and oxygen as a function of radiation dose by temperature programmed desorption (TPD). The main reaction products are OH and H with a fraction of oxygen from fully dissociated water. TPD spectra from a series of exposures reveal that EUV promotes formation of the partially dissociated water overlayer on Ru. Furthermore, loss of water due to desorption and dissociation is also observed. The water loss cross sections for amorphous and crystalline water are measured at 9 ± 2 × 10- 19 cm2 and 5 ± 1 × 10- 19 cm2, respectively. Comparison between the two cross sections suggests that crystalline water is more stable against EUV induced desorption/dissociation. The dissociation products can oxidize the Ru surface. For this early stage of oxidation, we measured a smaller (compared to water loss) cross section at 2 × 10- 20 cm2, which is 2 orders of magnitude smaller than the photon absorption cross section (at 92 eV) of gas phase water. The secondary electron (SE) contributions to the cross sections are also estimated. From our estimation, SE only forms a small part (20-25%) of the observed photon cross section.

High sensitivity microchannel plate detectors for space extreme ultraviolet missions.

PubMed

Yoshioka, K; Homma, T; Murakami, G; Yoshikawa, I

2012-08-01

Microchannel plate (MCP) detectors have been widely used as two-dimensional photon counting devices on numerous space EUV (extreme ultraviolet) missions. Although there are other choices for EUV photon detectors, the characteristic features of MCP detectors such as their light weight, low dark current, and high spatial resolution make them more desirable for space applications than any other detector. In addition, it is known that the photocathode can be tailored to increase the quantum detection efficiency (QDE) especially for longer UV wavelengths (100-150 nm). There are many types of photocathode materials available, typically alkali halides. In this study, we report on the EUV (50-150 nm) QDE evaluations for MCPs that were coated with Au, MgF(2), CsI, and KBr. We confirmed that CsI and KBr show 2-100 times higher QDEs than the bare photocathode MCPs, while Au and MgF(2) show reduced QDEs. In addition, the optimal geometrical parameters for the CsI deposition were also studied experimentally. The best CsI thickness was found to be 150 nm, and it should be deposited on the inner wall of the channels only where the EUV photons initially impinge. We will also discuss the techniques and procedures for reducing the degradation of the photocathode while it is being prepared on the ground before being deployed in space, as adopted by JAXA's EXCEED mission which will be launched in 2013.

Miniature rotating transmissive optical drum scanner

NASA Technical Reports Server (NTRS)

Lewis, Robert (Inventor); Parrington, Lawrence (Inventor); Rutberg, Michael (Inventor)

2013-01-01

A miniature rotating transmissive optical scanner system employs a drum of small size having an interior defined by a circumferential wall rotatable on a drum axis, an optical element positioned within the interior of the drum, and a light-transmissive lens aperture provided at an angular position in the circumferential wall of the drum for scanning a light beam to or from the optical element in the drum along a beam azimuth angle as the drum is rotated. The miniature optical drum scanner configuration obtains a wide scanning field-of-view (FOV) and large effective aperture is achieved within a physically small size.

Determination of line profiles on nano-structured surfaces using EUV and x-ray scattering

NASA Astrophysics Data System (ADS)

Soltwisch, Victor; Wernecke, Jan; Haase, Anton; Probst, Jürgen; Schoengen, Max; Krumrey, Michael; Scholze, Frank; Pomplun, Jan; Burger, Sven

2014-09-01

Non-imaging techniques like X-ray scattering are supposed to play an important role in the further development of CD metrology for the semiconductor industry. Grazing Incidence Small Angle X-ray Scattering (GISAXS) provides directly assessable information on structure roughness and long-range periodic perturbations. The disadvantage of the method is the large footprint of the X-ray beam on the sample due to the extremely shallow angle of incidence. This can be overcome by using wavelengths in the extreme ultraviolet (EUV) spectral range, EUV small angle scattering (EUVSAS), which allows for much steeper angles of incidence but preserves the range of momentum transfer that can be observed. Generally, the potentially higher momentum transfer at shorter wavelengths is counterbalanced by decreasing diffraction efficiency. This results in a practical limit of about 10 nm pitch for which it is possible to observe at least the +/- 1st diffraction orders with reasonable efficiency. At the Physikalisch-Technische Bundesanstalt (PTB), the available photon energy range extends from 50 eV up to 10 keV at two adjacent beamlines. PTB commissioned a new versatile Ellipso-Scatterometer which is capable of measuring 6" square substrates in a clean, hydrocarbon-free environment with full flexibility regarding the direction of the incident light polarization. The reconstruction of line profiles using a geometrical model with six free parameters, based on a finite element method (FEM) Maxwell solver and a particle swarm based least-squares optimization yielded consistent results for EUV-SAS and GISAXS. In this contribution we present scatterometry data for line gratings and consistent reconstruction results of the line geometry for EUV-SAS and GISAXS.

Comparison of Helioseismic Far-Side Active Region Detections with STEREO Far-Side EUV Observations of Solar Activity

NASA Astrophysics Data System (ADS)

Liewer, P. C.; Qiu, J.; Lindsey, C.

2017-10-01

Seismic maps of the Sun's far hemisphere, computed from Doppler data from the Helioseismic and Magnetic Imager (HMI) on board the Solar Dynamics Observatory (SDO) are now being used routinely to detect strong magnetic regions on the far side of the Sun (http://jsoc.stanford.edu/data/farside/). To test the reliability of this technique, the helioseismically inferred active region detections are compared with far-side observations of solar activity from the Solar TErrestrial RElations Observatory (STEREO), using brightness in extreme-ultraviolet light (EUV) as a proxy for magnetic fields. Two approaches are used to analyze nine months of STEREO and HMI data. In the first approach, we determine whether new large east-limb active regions are detected seismically on the far side before they appear Earth side and study how the detectability of these regions relates to their EUV intensity. We find that while there is a range of EUV intensities for which far-side regions may or may not be detected seismically, there appears to be an intensity level above which they are almost always detected and an intensity level below which they are never detected. In the second approach, we analyze concurrent extreme-ultraviolet and helioseismic far-side observations. We find that 100% (22) of the far-side seismic regions correspond to an extreme-ultraviolet plage; 95% of these either became a NOAA-designated magnetic region when reaching the east limb or were one before crossing to the far side. A low but significant correlation is found between the seismic signature strength and the EUV intensity of a far-side region.

A Sounding Rocket Mission Concept to Acquire High-Resolution Radiometric Spectra Spanning the 9 nm - 31 nm Wavelength Range

NASA Technical Reports Server (NTRS)

Krause, L. Habash; Cirtain, Jonathan; McGuirck, Michael; Pavelitz, Steven; Weber, Ed.; Winebarger, Amy

2012-01-01

When studying Solar Extreme Ultraviolet (EUV) emissions, both single-wavelength, two- dimensional (2D) spectroheliograms and multi-wavelength, one-dimensional (1D) line spectra are important, especially for a thorough understanding of the complex processes in the solar magnetized plasma from the base of the chromosphere through the corona. 2D image data are required for a detailed study of spatial structures, whereas radiometric (i.e., spectral) data provide information on relevant atomic excitation/ionization state densities (and thus temperature). Using both imaging and radiometric techniques, several satellite missions presently study solar dynamics in the EUV, including the Solar Dynamics Observatory (SDO), Hinode, and the Solar-Terrestrial Relations Observatory (STEREO). The EUV wavelengths of interest typically span 9 nm to 31 nm, with the shorter wavelengths being associated with the hottest features (e.g., intense flares and bright points) and the longer wavelengths associated with cooler features (e.g., coronal holes and filaments). Because the optical components of satellite instruments degrade over time, it is not uncommon to conduct sounding rocket underflights for calibration purposes. The authors have designed a radiometric sounding rocket payload that could serve as both a calibration underflight for and a complementary scientific mission to the upcoming Solar Ultraviolet Imager (SUVI) mission aboard the GOES-R satellite (scheduled for a 2015 launch). The challenge to provide quality radiometric line spectra over the 9-31 nm range covered by SUVI was driven by the multilayer coatings required to make the optical components, including mirrors and gratings, reflective over the entire range. Typically, these multilayers provide useful EUV reflectances over bandwidths of a few nm. Our solution to this problem was to employ a three-telescope system in which the optical components were coated with multilayers that spanned three wavelength ranges to cover the three pairs of SUVI bands. The complete system was designed to fit within the Black Brandt-IX 22.-diameter payload skin envelope. The basic optical path is that of a simple parabolic telescope in which EUV light is focused onto a slit and shutter assembly and imaged onto a normal-incidence diffraction grating, which then disperses the light onto a 2048 2048 CCD sensor. The CCD thus records 1D spatial information along one axis and spectral information along the other. The slit spans 40 arc-minutes in length, thus covering a solar diameter out to +/- 1.3 solar radii. Our operations concept includes imaging at three distinct positions: the north-south meridian, the northeast-southwest diagonal, and real-time pointing at an active region. Six 10-second images will be obtained at each position. Fine pointing is provided by the SPARCS-VII attitude control system typically employed on Black Brandt solar missions. Both before and after launch, all three telescopes will be calibrated with the EUV line emission source and monochromater system at NASA's Stray Light Facility at Marshall Spaceflight Center. Details of the payload design, operations concept, and data application will be presented.

LONG DURATION FLARE EMISSION: IMPULSIVE HEATING OR GRADUAL HEATING?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Jiong; Longcope, Dana W.

Flare emissions in X-ray and EUV wavelengths have previously been modeled as the plasma response to impulsive heating from magnetic reconnection. Some flares exhibit gradually evolving X-ray and EUV light curves, which are believed to result from superposition of an extended sequence of impulsive heating events occurring in different adjacent loops or even unresolved threads within each loop. In this paper, we apply this approach to a long duration two-ribbon flare SOL2011-09-13T22 observed by the Atmosphere Imaging Assembly (AIA). We find that to reconcile with observed signatures of flare emission in multiple EUV wavelengths, each thread should be heated inmore » two phases, an intense impulsive heating followed by a gradual, low-rate heating tail that is attenuated over 20–30 minutes. Each AIA resolved single loop may be composed of several such threads. The two-phase heating scenario is supported by modeling with both a zero-dimensional and a 1D hydrodynamic code. We discuss viable physical mechanisms for the two-phase heating in a post-reconnection thread.« less

EUV near normal incidence collector development at SAGEM

NASA Astrophysics Data System (ADS)

Mercier Ythier, R.; Bozec, X.; Geyl, R.; Rinchet, A.; Hecquet, Christophe; Ravet-Krill, Marie-Françoise; Delmotte, Franck; Sassolas, Benoît; Flaminio, Raffaele; Mackowski, Jean-Marie; Michel, Christophe; Montorio, Jean-Luc; Morgado, Nazario; Pinard, Laurent; Roméo, Elodie

2008-03-01

Through its participation to European programs, SAGEM has worked on the design and manufacturing of normal incidence collectors for EUV sources. By opposition to grazing incidence, normal incidence collectors are expected to collect more light with a simpler and cheaper design. Designs are presented for the two current types of existing sources: Discharge Produced Plasma (DPP) and Laser Produced Plasma (LPP). Collection efficiency is calculated in both cases. It is shown that these collectors can achieve about 10 % efficiency for DPP sources and 40 % for LPP sources. SAGEM works on the collectors manufacturability are also presented, including polishing, coating and cooling. The feasibility of polishing has been demonstrated with a roughness better than 2 angstroms obtained on several materials (glass, silicon, Silicon Carbide, metals...). SAGEM is currently working with the Institut d'Optique and the Laboratoire des Materiaux Avancés on the design and the process of EUV coatings for large mirrors. Lastly, SAGEM has studied the design and feasibility of an efficient thermal control, based on a liquid cooling through slim channels machined close to the optical surface.

White light scanner-based repeatability of 3-dimensional digitizing of silicon rubber abutment teeth impressions

PubMed Central

Jeon, Jin-Hun; Lee, Kyung-Tak; Kim, Hae-Young; Kim, Ji-Hwan

2013-01-01

PURPOSE The aim of this study was to evaluate the repeatability of the digitizing of silicon rubber impressions of abutment teeth by using a white light scanner and compare differences in repeatability between different abutment teeth types. MATERIALS AND METHODS Silicon rubber impressions of a canine, premolar, and molar tooth were each digitized 8 times using a white light scanner, and 3D surface models were created using the point clouds. The size of any discrepancy between each model and the corresponding reference tooth were measured, and the distribution of these values was analyzed by an inspection software (PowerInspect 2012, Delcamplc., Birmingham, UK). Absolute values of discrepancies were analyzed by the Kruskal-Wallis test and multiple comparisons (α=.05). RESULTS The discrepancy between the impressions for the canine, premolar, and molar teeth were 6.3 µm (95% confidence interval [CI], 5.4-7.2), 6.4 µm (95% CI, 5.3-7.6), and 8.9 µm (95% CI, 8.2-9.5), respectively. The discrepancy of the molar tooth impression was significantly higher than that of other tooth types. The largest variation (as mean [SD]) in discrepancies was seen in the premolar tooth impression scans: 26.7 µm (95% CI, 19.7-33.8); followed by canine and molar teeth impressions, 16.3 µm (95% CI, 15.3-17.3), and 14.0 µm (95% CI, 12.3-15.7), respectively. CONCLUSION The repeatability of the digitizing abutment teeth's silicon rubber impressions by using a white light scanner was improved compared to that with a laser scanner, showing only a low mean discrepancy between 6.3 µm and 8.9 µm, which was in an clinically acceptable range. Premolar impression with a long and narrow shape showed a significantly larger discrepancy than canine and molar impressions. Further work is needed to increase the digitizing performance of the white light scanner for deep and slender impressions. PMID:24353885

Performance of the Multi-Spectral Solar Telescope Array. III - Optical characteristics of the Ritchey-Chretien and Cassegrain telescopes

NASA Astrophysics Data System (ADS)

Hoover, Richard B.; Baker, Phillip C.; Hadaway, James B.; Johnson, R. B.; Peterson, Cynthia; Gabardi, David R.; Walker, Arthur B., Jr.; Lindblom, J. F.; Deforest, Craig; O'Neal, R. H.

1991-12-01

The Multi-Spectral Solar Telescope Array (MSSTA), which is a sounding-rocket-borne observatory for investigating the sun in the soft X-ray/EUV and FUV regimes of the electromagnetic spectrum, utilizes single reflection multilayer coated Herschelian telescopes for wavelengths below 100 A, and five doubly reflecting multilayer coated Ritchey-Chretien and two Cassegrain telescopes for selected wavelengths in the EUV region between 100 and 1000 A. The paper discusses the interferometric alignment, testing, focusing, visible light testing, and optical performance characteristics of the Ritchey-Chretien and Cassegrain telescopes of MSSTA. A schematic diagram of the MSSTA Ritchey-Chretien telescope is presented together with diagrams of the system autocollimation testing.

Figure correction of multilayer coated optics

DOEpatents

Chapman; Henry N. , Taylor; John S.

2010-02-16

A process is provided for producing near-perfect optical surfaces, for EUV and soft-x-ray optics. The method involves polishing or otherwise figuring the multilayer coating that has been deposited on an optical substrate, in order to correct for errors in the figure of the substrate and coating. A method such as ion-beam milling is used to remove material from the multilayer coating by an amount that varies in a specified way across the substrate. The phase of the EUV light that is reflected from the multilayer will be affected by the amount of multilayer material removed, but this effect will be reduced by a factor of 1-n as compared with height variations of the substrate, where n is the average refractive index of the multilayer.

Atomic processes and equation of state of high Z plasmas for EUV sources and their effects on the spatial and temporal evolution of the plasmas

NASA Astrophysics Data System (ADS)

Sasaki, Akira; Sunahara, Atushi; Furukawa, Hiroyuki; Nishihara, Katsunobu; Nishikawa, Takeshi; Koike, Fumihiro

2016-03-01

Laser-produced plasma (LPP) extreme ultraviolet (EUV) light sources have been intensively investigated due to potential application to next-generation semiconductor technology. Current studies focus on the atomic processes and hydrodynamics of plasmas to develop shorter wavelength sources at λ = 6.x nm as well as to improve the conversion efficiency (CE) of λ = 13.5 nm sources. This paper examines the atomic processes of mid-z elements, which are potential candidates for λ = 6.x nm source using n=3-3 transitions. Furthermore, a method to calculate the hydrodynamics of the plasmas in terms of the initial interaction between a relatively weak prepulse laser is presented.

Models of the Solar Atmospheric Response to Flare Heating

NASA Technical Reports Server (NTRS)

Allred, Joel

2011-01-01

I will present models of the solar atmospheric response to flare heating. The models solve the equations of non-LTE radiation hydrodynamics with an electron beam added as a flare energy source term. Radiative transfer is solved in detail for many important optically thick hydrogen and helium transitions and numerous optically thin EUV lines making the models ideally suited to study the emission that is produced during flares. I will pay special attention to understanding key EUV lines as well the mechanism for white light production. I will also present preliminary results of how the model solar atmosphere responds to Fletcher & Hudson type flare heating. I will compare this with the results from flare simulations using the standard thick target model.

Prospective EUV observations of hot DA white dwarfs with the EUV Explorer

NASA Technical Reports Server (NTRS)

Finley, David S.; Malina, Roger F.; Bowyer, Stuart

1987-01-01

The Extreme Ultraviolet Explorer (EUVE) will perform a high sensitivity EUV all-sky survey. A major category of sources which will be detected with the EUVE instruments consists of hot white dwarfs. Detailed preliminary studies of synthetic EUV observations of white dwarfs have been carried out using the predicted EUVE instrumental response functions. Using available information regarding space densities of white dwarfs and the distribution of neutral hydrogen in the interstellar medium, the numbers of DA white dwarfs which will be detectable in the different EUV bandpasses have been estimated.

Patterning control strategies for minimum edge placement error in logic devices

NASA Astrophysics Data System (ADS)

Mulkens, Jan; Hanna, Michael; Slachter, Bram; Tel, Wim; Kubis, Michael; Maslow, Mark; Spence, Chris; Timoshkov, Vadim

2017-03-01

In this paper we discuss the edge placement error (EPE) for multi-patterning semiconductor manufacturing. In a multi-patterning scheme the creation of the final pattern is the result of a sequence of lithography and etching steps, and consequently the contour of the final pattern contains error sources of the different process steps. We describe the fidelity of the final pattern in terms of EPE, which is defined as the relative displacement of the edges of two features from their intended target position. We discuss our holistic patterning optimization approach to understand and minimize the EPE of the final pattern. As an experimental test vehicle we use the 7-nm logic device patterning process flow as developed by IMEC. This patterning process is based on Self-Aligned-Quadruple-Patterning (SAQP) using ArF lithography, combined with line cut exposures using EUV lithography. The computational metrology method to determine EPE is explained. It will be shown that ArF to EUV overlay, CDU from the individual process steps, and local CD and placement of the individual pattern features, are the important contributors. Based on the error budget, we developed an optimization strategy for each individual step and for the final pattern. Solutions include overlay and CD metrology based on angle resolved scatterometry, scanner actuator control to enable high order overlay corrections and computational lithography optimization to minimize imaging induced pattern placement errors of devices and metrology targets.

A novel optical scanner for laser radar

NASA Astrophysics Data System (ADS)

Yao, Shunyu; Peng, Renjun; Gao, Jianshuang

2013-09-01

Laser radar are ideally suitable for recognizing objects, detection, target tracking or obstacle avoidance, because of the high angular and range resolution. In recent years, scannerless ladar has developed rapidly. In contrast with traditional scanner ladar, scannerless ladar has distinct characteristics such as small, compact, high frame rate, wide field of view and high reliability. However, the scannerless ladar is still in the stage of laboratory and the performance cannot meet the demands of practical applications. Hence, traditional scanner laser radar is still mainly applied. In scanner ladar system, optical scanner is the key component which can deflect the direction of laser beam to the target. We investigated a novel scanner based on the characteristic of fiber's light-conductive. The fiber bundles are arranged in a special structure which connected to a motor. When motor working properly, the laser passes through the fibers on incident plane and the location of laser spot on output plane will move along with a straight line in a constant speed. The direction of light will be deflected by taking advantage of transmitting optics, then the linear sweeping of the target can be achieved. A laser radar scheme with high speed and large field of view can be realized. Some researches on scanner are simply introduced on section1. The structure of the optical scanner will be described and the practical applications of the scanner in transmitting and receiving optical paths are discussed in section2. Some characteristic of scanner is calculated in section3. In section4, we report the simulation and experiment of our prototype.

Effect of SPM-based cleaning POR on EUV mask performance

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Lee, Han-shin; Yoon, Jinsang; Shimomura, Takeya; Friz, Alex; Montgomery, Cecilia; Ma, Andy; Goodwin, Frank; Kang, Daehyuk; Chung, Paul; Shin, Inkyun; Cho, H.

2011-11-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. The fact that a pellicle is not used to protect the mask surface in EUV lithography suggests that EUV masks may have to undergo more cleaning cycles during their lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality and patterning performance during 30 cycles of Samsung's EUV mask SPM-based cleaning and 20 cycles of SEMATECH ADT exposure. We have observed that the quality and patterning performance of EUV masks does not significantly change during these processes except mask pattern CD change. To resolve this issue, we have developed an acid-free cleaning POR and substantially improved EUV mask film loss compared to the SPM-based cleaning POR.

Three-Dimensional Accuracy of Facial Scan for Facial Deformities in Clinics: A New Evaluation Method for Facial Scanner Accuracy.

PubMed

Zhao, Yi-Jiao; Xiong, Yu-Xue; Wang, Yong

2017-01-01

In this study, the practical accuracy (PA) of optical facial scanners for facial deformity patients in oral clinic was evaluated. Ten patients with a variety of facial deformities from oral clinical were included in the study. For each patient, a three-dimensional (3D) face model was acquired, via a high-accuracy industrial "line-laser" scanner (Faro), as the reference model and two test models were obtained, via a "stereophotography" (3dMD) and a "structured light" facial scanner (FaceScan) separately. Registration based on the iterative closest point (ICP) algorithm was executed to overlap the test models to reference models, and "3D error" as a new measurement indicator calculated by reverse engineering software (Geomagic Studio) was used to evaluate the 3D global and partial (upper, middle, and lower parts of face) PA of each facial scanner. The respective 3D accuracy of stereophotography and structured light facial scanners obtained for facial deformities was 0.58±0.11 mm and 0.57±0.07 mm. The 3D accuracy of different facial partitions was inconsistent; the middle face had the best performance. Although the PA of two facial scanners was lower than their nominal accuracy (NA), they all met the requirement for oral clinic use.

The effect of ambient lighting on Laser Doppler Imaging of a standardized cutaneous injury model.

PubMed

Pham, Alan Chuong Q; Hei, Erik La; Harvey, John G; Holland, Andrew Ja

2017-01-01

The aim of this study was to investigate the potential confounding effects of four different types of ambient lighting on the results of Laser Doppler Imaging (LDI) of a standardized cutaneous injury model. After applying a mechanical stimulus to the anterior forearm of a healthy volunteer and inducing a wheal and arteriolar flare (the Triple response), we used a Laser Doppler Line Scanner (LDLS) to image the forearm under four different types of ambient lighting: light-emitting-diode (LED), compact fluorescent lighting (CFL), halogen, daylight, and darkness as a control. A spectrometer was used to measure the intensity of light energy at 785 nm, the wavelength used by the scanner for measurement under each type of ambient lighting. Neither the LED nor CFL bulbs emitted detectable light energy at a wavelength of 785 nm. The color-based representation of arbitrary perfusion unit (APU) values of the Triple response measured by the scanner was similar between darkness, LED, and CFL light. Daylight emitted 2 mW at 785 nm, with a slight variation tending more towards lower APU values compared to darkness. Halogen lighting emitted 6 mW of light energy at 785 nm rendering the color-based representation impossible to interpret. Halogen lighting and daylight have the potential to confound results of LDI of cutaneous injuries whereas LED and CFL lighting did not. Any potential sources of daylight should be reduced and halogen lighting completely covered or turned off prior to wound imaging.

Visual stimulus presentation using fiber optics in the MRI scanner.

PubMed

Huang, Ruey-Song; Sereno, Martin I

2008-03-30

Imaging the neural basis of visuomotor actions using fMRI is a topic of increasing interest in the field of cognitive neuroscience. One challenge is to present realistic three-dimensional (3-D) stimuli in the subject's peripersonal space inside the MRI scanner. The stimulus generating apparatus must be compatible with strong magnetic fields and must not interfere with image acquisition. Virtual 3-D stimuli can be generated with a stereo image pair projected onto screens or via binocular goggles. Here, we describe designs and implementations for automatically presenting physical 3-D stimuli (point-light targets) in peripersonal and near-face space using fiber optics in the MRI scanner. The feasibility of fiber-optic based displays was demonstrated in two experiments. The first presented a point-light array along a slanted surface near the body, and the second presented multiple point-light targets around the face. Stimuli were presented using phase-encoded paradigms in both experiments. The results suggest that fiber-optic based displays can be a complementary approach for visual stimulus presentation in the MRI scanner.

The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL

NASA Astrophysics Data System (ADS)

Fujitani, Noriaki; Sakamoto, Rikimaru; Endo, Takafumi; Onishi, Ryuji; Nishita, Tokio; Yaguchi, Hiroaki; Ho, Bang-Ching

2013-03-01

EUV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond. However, the power of light source, masks and photo resists are the most critical issues for driving the EUVL. Especially, concerning about deterioration of the patterning performance by Out-of-Band (OoB) light existing in the EUV light, and contamination problem of exposure tool due to the resist outgassing are the key issues which have to be resolved in the material view point toward the high volume manufacturing by EUVL. This paper proposes the solution for these critical issues by applying the top coat material. The key characteristics for top coat material are the protection of the OoB effect, the prevention of the outgassing from resist as a barrier layer and enhancement of photo resist performance, like resist profile and process window. This paper describes the material design and performance. The optical property needs having the high absorbance of DUV light in OoB range and high transmittance for 13.5nm wavelength. Outgassing barrier property needs high broking property against non contamination chemical species from photo resist outgassing. The study of TOF-SIMS analysis indicates how much the polymer chemistry can impact for outgassing barrier property. The dependency of material design and lithography performance is also discussed.

Solar Demon: near real-time solar eruptive event detection on SDO/AIA images

NASA Astrophysics Data System (ADS)

Kraaikamp, Emil; Verbeeck, Cis

Solar flares, dimmings and EUV waves have been observed routinely in extreme ultra-violet (EUV) images of the Sun since 1996. These events are closely associated with coronal mass ejections (CMEs), and therefore provide useful information for early space weather alerts. The Solar Dynamics Observatory/Atmospheric Imaging Assembly (SDO/AIA) generates such a massive dataset that it becomes impossible to find most of these eruptive events manually. Solar Demon is a set of automatic detection algorithms that attempts to solve this problem by providing both near real-time warnings of eruptive events and a catalog of characterized events. Solar Demon has been designed to detect and characterize dimmings, EUV waves, as well as solar flares in near real-time on SDO/AIA data. The detection modules are running continuously at the Royal Observatory of Belgium on both quick-look data and synoptic science data. The output of Solar Demon can be accessed in near real-time on the Solar Demon website, and includes images, movies, light curves, and the numerical evolution of several parameters. Solar Demon is the result of collaboration between the FP7 projects AFFECTS and COMESEP. Flare detections of Solar Demon are integrated into the COMESEP alert system. Here we present the Solar Demon detection algorithms and their output. We will focus on the algorithm and its operational implementation. Examples of interesting flare, dimming and EUV wave events, and general statistics of the detections made so far during solar cycle 24 will be presented as well.

A prototype optical-CT system for PRESAGE 3D dosimeter readout

NASA Astrophysics Data System (ADS)

Miles, Devin; Yoon, Paul; Kodra, Jacob; Adamovics, John; Oldham, Mark

2017-05-01

This work introduces the Duke Integrated-lens Optical Scanner (DIOS), a prototype optical-CT system designed for convenient and low-cost readout of PRESAGE 3D dosimeters. A key novelty of the DIOS is the incorporation of a multi-purpose light-collimating tank (the LC-tank). The LC-tank collimates light from a point source, maintains parallel ray geometry through a dosimeter mounted inside the tank, and refocuses emergent light onto a CCD detector. A second purpose is to dramatically reduce the amount of refractive matched fluid required in prior optical-CT scanners. This is achieved by substituting large quantities of refractive-matched fluid with solid RI-matched polyurethane. The advantages of DIOS include eliminating the need for expensive telecentric lenses, and eliminating the impracticality of large volumes of RI matched fluid. The DIOS is potentially more susceptible to stray-light artifacts. Preliminary phantom testing shows promising agreement between PRESAGE/DIOS readout and prior commissioned optical-CT scanners, as well as with Eclipse dose calculations.

Nanoscale inhomogeneity and photoacid generation dynamics in extreme ultraviolet resist materials

NASA Astrophysics Data System (ADS)

Wu, Ping-Jui; Wang, Yu-Fu; Chen, Wei-Chi; Wang, Chien-Wei; Cheng, Joy; Chang, Vencent; Chang, Ching-Yu; Lin, John; Cheng, Yuan-Chung

2018-03-01

The development of extreme ultraviolet (EUV) lithography towards the 22 nm node and beyond depends critically on the availability of resist materials that meet stringent control requirements in resolution, line edge roughness, and sensitivity. However, the molecular mechanisms that govern the structure-function relationships in current EUV resist systems are not well understood. In particular, the nanoscale structures of the polymer base and the distributions of photoacid generators (PAGs) should play a critical roles in the performance of a resist system, yet currently available models for photochemical reactions in EUV resist systems are exclusively based on homogeneous bulk models that ignore molecular-level details of solid resist films. In this work, we investigate how microscopic molecular organizations in EUV resist affect photoacid generations in a bottom-up approach that describes structure-dependent electron-transfer dynamics in a solid film model. To this end, molecular dynamics simulations and stimulated annealing are used to obtain structures of a large simulation box containing poly(4-hydroxystyrene) (PHS) base polymers and triphenylsulfonium based PAGs. Our calculations reveal that ion-pair interactions govern the microscopic distributions of the polymer base and PAG molecules, resulting in a highly inhomogeneous system with nonuniform nanoscale chemical domains. Furthermore, the theoretical structures were used in combination of quantum chemical calculations and the Marcus theory to evaluate electron transfer rates between molecular sites, and then kinetic Monte Carlo simulations were carried out to model electron transfer dynamics with molecular structure details taken into consideration. As a result, the portion of thermalized electrons that are absorbed by the PAGs and the nanoscale spatial distribution of generated acids can be estimated. Our data reveal that the nanoscale inhomogeneous distributions of base polymers and PAGs strongly affect the electron transfer and the performance of the resist system. The implications to the performances of EUV resists and key engineering requirements for improved resist systems will also be discussed in this work. Our results shed light on the fundamental structure dependence of photoacid generation and the control of the nanoscale structures as well as base polymer-PAG interactions in EVU resist systems, and we expect these knowledge will be useful for the future development of improved EUV resist systems.

Atomic hydrogen cleaning of EUV multilayer optics

NASA Astrophysics Data System (ADS)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Ê/hr for sputtered carbon and 40 Ê/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning while providing cleaning rates suitable for EUV lithography operations.

Atomic hydrogen cleaning of EUV multilayer optics

NASA Astrophysics Data System (ADS)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Å/hr for sputtered carbon and 40 Å/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning while providing cleaning rates suitable for EUV lithography operations.

X-ray/EUV optics for astronomy, microscopy, polarimetry, and projection lithography; Proceedings of the Meeting, San Diego, CA, July 9-13, 1990

NASA Technical Reports Server (NTRS)

Hoover, Richard B. (Editor); Walker, Arthur B. C., Jr. (Editor)

1991-01-01

Topics discussed in this issue include the fabrication of multilayer X-ray/EUV coatings; the design, characterization, and test of multilayer X-ray/EUV coatings; multilayer X-ray/EUV monochromators and imaging microscopes; X-ray/EUV telescopes; the test and calibration performance of X-ray/EUV instruments; XUV/soft X-ray projection lithography; X-ray/EUV space observatories and missions; X-ray/EUV telescopes for solar research; X-ray/EUV polarimetry; X-ray/EUV spectrographs; and X-ray/EUV filters and gratings. Papers are presented on the deposition-controlled uniformity of multilayer mirrors, interfaces in Mo/Si multilayers, the design and analysis of an aspherical multilayer imaging X-ray microscope, recent developments in the production of thin X-ray reflecting foils, and the ultraprecise scanning technology. Consideration is also given to an active sun telescope array, the fabrication and performance at 1.33 nm of a 0.24-micron-period multilayer grating, a cylindrical proportional counter for X-ray polarimetry, and the design and analysis of the reflection grating arrays for the X-Ray Multi-Mirror Mission.

Feasibility of Clinician-Facilitated Three-Dimensional Printing of Synthetic Cranioplasty Flaps.

PubMed

Panesar, Sandip S; Belo, Joao Tiago A; D'Souza, Rhett N

2018-05-01

Integration of three-dimensional (3D) printing and stereolithography into clinical practice is in its nascence, and concepts may be esoteric to the practicing neurosurgeon. Currently, creation of 3D printed implants involves recruitment of offsite third parties. We explored a range of 3D scanning and stereolithographic techniques to create patient-specific synthetic implants using an onsite, clinician-facilitated approach. We simulated bilateral craniectomies in a single cadaveric specimen. We devised 3 methods of creating stereolithographically viable virtual models from removed bone. First, we used preoperative and postoperative computed tomography scanner-derived bony window models from which the flap was extracted. Second, we used an entry-level 3D light scanner to scan and render models of the individual bone pieces. Third, we used an arm-mounted, 3D laser scanner to create virtual models using a real-time approach. Flaps were printed from the computed tomography scanner and laser scanner models only in a ultraviolet-cured polymer. The light scanner did not produce suitable virtual models for printing. The computed tomography scanner-derived models required extensive postfabrication modification to fit the existing defects. The laser scanner models assumed good fit within the defects without any modification. The methods presented varying levels of complexity in acquisition and model rendering. Each technique required hardware at varying in price points from $0 to approximately $100,000. The laser scanner models produced the best quality parts, which had near-perfect fit with the original defects. Potential neurosurgical applications of this technology are discussed. Copyright © 2018 Elsevier Inc. All rights reserved.

Responses of Solar Irradiance and the Ionosphere to an Intense Activity Region

NASA Astrophysics Data System (ADS)

Chen, Yiding; Liu, Libo; Le, Huijun; Wan, Weixing

2018-03-01

Solar rotation (SR) variation dominates solar extremely ultraviolet (EUV) changes on the timescale of days. The F10.7 index is usually used as an indicator for solar EUV. The SR variation of F10.7 significantly enhanced during the 2008th-2009th Carrington rotations (CRs) owing to an intense active region; F10.7 increased about 180 units during that SR period. That was the most prominent SR variation of F10.7 during solar cycle 23. In this paper, global electron content (GEC) is used to investigate ionospheric response to that strong variation of solar irradiance indicated by F10.7. The variation of GEC with F10.7 was anomalous (GEC-F10.7 slope significantly decreased) during the 2008th-2009th CRs; however, GEC versus EUV variation during that period was consistent with that during adjacent time intervals when using Solar Heliospheric Observatory/Solar EUV Monitor 26-34 nm EUV measurements. The reason is that F10.7 response to that intense active region was much stronger than EUV response; thus, the EUV-F10.7 slope decreased. We confirmed decreased EUV-F10.7 slope during the 2008th-2009th CRs for different wavelengths within 27-120 nm using Thermosphere, Ionosphere, Mesosphere Energetics and Dynamics/Solar EUV Experiment high spectral resolution EUV measurements. And on the basis of Solar Heliospheric Observatory/Solar EUV Monitor EUV measurements during solar cycle 23, we further presented that EUV-F10.7 slope statistically tends to decrease when the SR variation of F10.7 significantly enhances. Moreover, we found that ionospheric time lag effect to EUV is exaggerated when using F10.7, owing to the time lag effect of EUV to F10.7.

Conceptual study of Earth observation missions with a space-borne laser scanner

NASA Astrophysics Data System (ADS)

Kobayashi, Takashi; Sato, Yohei; Yamakawa, Shiro

2017-11-01

The Japan Aerospace Exploration Agency (JAXA) has started a conceptual study of earth observation missions with a space-borne laser scanner (GLS, as Global Laser Scanner). Laser scanners are systems which transmit intense pulsed laser light to the ground from an airplane or a satellite, receive the scattered light, and measure the distance to the surface from the round-trip delay time of the pulse. With scanning mechanisms, GLS can obtain high-accuracy three-dimensional (3D) information from all over the world. High-accuracy 3D information is quite useful in various areas. Currently, following applications are considered. 1. Observation of tree heights to estimate the biomass quantity. 2. Making the global elevation map with high resolution. 3. Observation of ice-sheets. This paper aims at reporting the present state of our conceptual study of the GLS. A prospective performance of the GLS for earth observation missions mentioned above.

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

NASA Astrophysics Data System (ADS)

Popescu, Carmen; Frommhold, Andreas; McClelland, Alexandra; Roth, John; Ekinci, Yasin; Robinson, Alex P. G.

2017-03-01

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

Expected scientific performance of the three spectrometers on the extreme ultraviolet explorer

NASA Technical Reports Server (NTRS)

Vallerga, J. V.; Jelinsky, P.; Vedder, P. W.; Malina, R. F.

1990-01-01

The expected in-orbit performance of the three spectrometers included on the Extreme Ultraviolet Explorer astronomical satellite is presented. Recent calibrations of the gratings, mirrors and detectors using monochromatic and continuum EUV light sources allow the calculation of the spectral resolution and throughput of the instrument. An effective area range of 0.2 to 2.8 sq cm is achieved over the wavelength range 70-600 A with a peak spectral resolution (FWHM) of 360 assuming a spacecraft pointing knowledge of 10 arc seconds (FWHM). For a 40,000 sec observation, the average 3 sigma sensitivity to a monochromatic line source is 0.003 photons/sq cm s. Simulated observations of known classes of EUV sources, such as hot white dwarfs, and cataclysmic variables are also presented.

Asymmetric mass accretion in the magnetic cataclysmic variable RE 1149 + 28

NASA Technical Reports Server (NTRS)

Howell, Steve B.; Sirk, Martin M.; Malina, Roger F.; Mittaz, J. P. D.; Mason, K. O.

1995-01-01

We present the first detailed extreme photometric observations of a magnetic cataclysmic variable. Our two Extreme Ultraviolet Explorer (EUVE) observations of the AM Her star RE 1149 + 28 were obtained about 1 yr apart and show light-curve variations on orbital to yearly timescales, as well as long-term mean flux level changes of a factor of 2. The photometric data show a persistent ingress EUV enhancement which lasts approximately 0.04 in phase. We attribute this to a region of approximately 10(exp 3) km in extent at the accretion impact site, on or very near the surface of the white dwarf primary. Our observations of RE 1149 are consistent with a relatively low system inclination and provide a best-fit orbital period of 90.14 +/- 0.015 minutes.

Observation of EUVL mask using coherent EUV scatterometry microscope with high-harmonic-generation EUV source

NASA Astrophysics Data System (ADS)

Mamezaki, Daiki; Harada, Tetsuo; Nagata, Yutaka; Watanabe, Takeo

2017-07-01

In extreme ultraviolet (EUV) lithography, development of review tools for EUV mask pattern and phase defect at working wavelength of 13.5 nm is required. The EUV mask is composed of an absorber pattern (50 - 70 nm thick) and Mo/Si multilayer (280 nm thick) on a glass substrate. This mask pattern seems three-dimensional (3D) structure. This 3D structure would modulate EUV reflection phase, which would cause focus and pattern shifts. Thus, EUV phase imaging is important to evaluate this phase modulation. We have developed coherent EUV scatterometry microscope (CSM), which is a simple microscope without objective optics. EUV phase and intensity image are reconstructed with diffraction images by ptychography with coherent EUV illumination. The high-harmonic-generation (HHG) EUV source was employed for standalone CSM system. In this study, we updated HHG system of pump-laser reduction and gas-pressure control. Two types of EUV mask absorber patterns were observed. An 88-nm lines-and-spaces and a cross-line patterns were clearly reconstructed by ptychography. In addition, a natural defect with 2-μm diameter on the cross-line was well reconstructed. This demonstrated the high capability of the standalone CSM, which system will be used in the factories, such as mask shops and semiconductor fabrication plants.

Mechanism of soft x-ray continuum radiation from low-energy pinch discharges of hydrogen and ultra-low field ignition of solid fuels

NASA Astrophysics Data System (ADS)

Mills, R.; Lotoski, J.; Lu, Y.

2017-09-01

EUV continuum radiation (10-30 nm) arising only from very low energy pulsed pinch gas discharges comprising some hydrogen was first observed at BlackLight Power, Inc. and reproduced at the Harvard Center for Astrophysics (CfA). The source was determined to be due to the transition of H to the lower-energy hydrogen or hydrino state H(1/4) whose emission matches that observed wherein alternative sources were eliminated. The identity of the catalyst that accepts 3 · 27.2 eV from the H to cause the H to H(1/4) transition was determined to HOH versus 3H. The mechanism was elucidated using different oxide-coated electrodes that were selective in forming HOH versus plasma forming metal atoms as well as from the intensity profile that was a mismatch for the multi-body reaction required during 3H catalysis. The HOH catalyst was further shown to give EUV radiation of the same nature by igniting a solid fuel comprising a source of H and HOH catalyst by passing a low voltage, high current through the fuel to produce explosive plasma. No chemical reaction can release such high-energy light. No high field existed to form highly ionized ions that could give radiation in this EUV region that persisted even without power input. This plasma source serves as strong evidence for the existence of the transition of H to hydrino H(1/4) by HOH as the catalyst and a corresponding new power source wherein initial extraordinarily brilliant light-emitting prototypes are already producing photovoltaic generated electrical power. The hydrino product of a catalyst reaction of atomic hydrogen was analyzed by multiple spectroscopic techniques. Moreover, the mH catalyst was identified to be active in astronomical sources such as the Sun, stars and interstellar medium wherein the characteristics of hydrino match those of the dark matter of the Universe.

System and Method for Scan Range Gating

NASA Technical Reports Server (NTRS)

Lindemann, Scott (Inventor); Zuk, David M. (Inventor)

2017-01-01

A system for scanning light to define a range gated signal includes a pulsed coherent light source that directs light into the atmosphere, a light gathering instrument that receives the light modified by atmospheric backscatter and transfers the light onto an image plane, a scanner that scans collimated light from the image plane to form a range gated signal from the light modified by atmospheric backscatter, a control circuit that coordinates timing of a scan rate of the scanner and a pulse rate of the pulsed coherent light source so that the range gated signal is formed according to a desired range gate, an optical device onto which an image of the range gated signal is scanned, and an interferometer to which the image of the range gated signal is directed by the optical device. The interferometer is configured to modify the image according to a desired analysis.

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

NASA Technical Reports Server (NTRS)

Xin, Xiaobin; Yan, Feng; Koeth, Timothy W.; Hu, Jun; Zhao, Jian H.

2005-01-01

Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.

Soft x-ray submicron imaging detector based on point defects in LiF

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baldacchini, G.; Bollanti, S.; Bonfigli, F.

2005-11-15

The use of lithium fluoride (LiF) crystals and films as imaging detectors for EUV and soft-x-ray radiation is discussed. The EUV or soft-x-ray radiation can generate stable color centers, emitting in the visible spectral range an intense fluorescence from the exposed areas. The high dynamic response of the material to the received dose and the atomic scale of the color centers make this detector extremely interesting for imaging at a spatial resolution which can be much smaller than the light wavelength. Experimental results of contact microscopy imaging of test meshes demonstrate a resolution of the order of 400 nm. Thismore » high spatial resolution has been obtained in a wide field of view, up to several mm{sup 2}. Images obtained on different biological samples, as well as an investigation of a soft x-ray laser beam are presented. The behavior of the generated color centers density as a function of the deposited x-ray dose and the advantages of this new diagnostic technique for both coherent and noncoherent EUV sources, compared with CCDs detectors, photographic films, and photoresists are discussed.« less

The effect of ambient lighting on Laser Doppler Imaging of a standardized cutaneous injury model

PubMed Central

Pham, Alan Chuong Q; Hei, Erik La; Harvey, John G; Holland, Andrew JA

2017-01-01

Objective: The aim of this study was to investigate the potential confounding effects of four different types of ambient lighting on the results of Laser Doppler Imaging (LDI) of a standardized cutaneous injury model. Methods: After applying a mechanical stimulus to the anterior forearm of a healthy volunteer and inducing a wheal and arteriolar flare (the Triple response), we used a Laser Doppler Line Scanner (LDLS) to image the forearm under four different types of ambient lighting: light-emitting-diode (LED), compact fluorescent lighting (CFL), halogen, daylight, and darkness as a control. A spectrometer was used to measure the intensity of light energy at 785 nm, the wavelength used by the scanner for measurement under each type of ambient lighting. Results: Neither the LED nor CFL bulbs emitted detectable light energy at a wavelength of 785 nm. The color-based representation of arbitrary perfusion unit (APU) values of the Triple response measured by the scanner was similar between darkness, LED, and CFL light. Daylight emitted 2 mW at 785 nm, with a slight variation tending more towards lower APU values compared to darkness. Halogen lighting emitted 6 mW of light energy at 785 nm rendering the color-based representation impossible to interpret. Conclusions: Halogen lighting and daylight have the potential to confound results of LDI of cutaneous injuries whereas LED and CFL lighting did not. Any potential sources of daylight should be reduced and halogen lighting completely covered or turned off prior to wound imaging. PMID:29348978

Correcting scan-to-scan response variability for a radiochromic film-based reference dosimetry system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewis, David, E-mail: rcfilmconsulting@gmail.com; Devic, Slobodan

Purpose: In radiochromic film dosimetry systems, measurements are usually obtained from film images acquired on a CCD-based flatbed scanner. The authors investigated factors affecting scan-to-scan response variability leading to increased dose measurement uncertainty. Methods: The authors used flatbed document scanners to repetitively scan EBT3 radiochromic films exposed to doses 0–1000 cGy, together with three neutral density filters and three blue optical filters. Scanning was performed under two conditions: scanner lid closed and scanner lid opened/closed between scans. The authors also placed a scanner in a cold room at 9 °C and later in a room at 22 °C and scanned EBT3 filmsmore » to explore temperature effects. Finally, the authors investigated the effect of altering the distance between the film and the scanner’s light source. Results: Using a measurement protocol to isolate the contribution of the CCD and electronic circuitry of the scanners, the authors found that the standard deviation of response measurements for the EBT3 film model was about 0.17% for one scanner and 0.09% for the second. When the lid of the first scanner was opened and closed between scans, the average scan-to-scan difference of responses increased from 0.12% to 0.27%. Increasing the sample temperature during scanning changed the RGB response values by about −0.17, −0.14, and −0.05%/°C, respectively. Reducing the film-to-light source distance increased the RBG response values about 1.1, 1.3, and 1.4%/mm, respectively. The authors observed that films and film samples were often not flat with some areas up to 8 mm away from the scanner’s glass window. Conclusions: In the absence of measures to deal with the response irregularities, each factor the authors investigated could lead to dose uncertainty >2%. Those factors related to the film-to-light source distance could be particularly impactful since the authors observed many instances where the curl of film samples had the potential to cause dose uncertainty in excess of 5%. Two expedients will eliminate the uncertainties: a transparent sheet (preferably glass) placed over the scanned film keeps the film-to-light source distance constant, and an EBT3 reference film included in all scans provides correction factors for measured response values.« less

EUV Solar Instrument Development at the Marshall Space Flight Center

NASA Astrophysics Data System (ADS)

Kobayashi, K.; Cirtain, J. W.; Davis, J. M.; West, E.; Golub, L.; Korreck, K. E.; Tsuneta, S.; Bando, T.

2009-12-01

The three sounding rocket instrument programs currently underway at the NASA Marshall Space Flight Center represent major advances in solar observations, made possible by improvements in EUV optics and detector technology. The Solar Ultraviolet Magnetograph Instrument (SUMI) is an EUV spectropolarimeter designed to measure the Zeeman splitting of two chromospheric EUV lines, the 280 nm MgII and 155 nm CIV lines. SUMI directly observes the magnetic field in the low-beta region where most energetic phenomena are though to originate. In conjunction with visible-light magnetographs, this observation allows us to track the evolution of the magnetic field as it evolves from the photosphere to the upper chromosphere. SUMI incorporates a normal incidence Cassegrain telescope, a MgF2 double-Wollaston polarizing beam splitter and two TVLS (toroidal varied line space) gratings, and is capable of observing two orthogonal polarizations in two wavelength bands simultaneously. SUMI has been fully assembled and tested, and currently scheduled for launch in summer of 2010. The High-resolution Coronal Imager is a normal-incidence EUV imaging telescope designed to achieve 0.2 arcsecond resolution, with a pixel size of 0.1 arcsecond. This is a factor of 25 improvement in aerial resolution over the Transition Region And Coronal Explorer (TRACE). Images obtained by TRACE indicate presence of unresolved structures; higher resolution images will reveal the scale and topology of structures that make up the corona. The telescope mirrors are currently being fabricated, and the instrument has been funded for flight. In addition, a Lyman alpha spectropolarimeter is under development in collaboration with the National Astronomical Observatory of Japan. This aims to detect the linear polarization in the chromosphere caused by the Hanle effect. Horizontal magnetic fields in the chromosphere are expected to be detectable as polarization near disk center, and off-limb observations will reveal the magnetic field structure of filaments and prominences. Laboratory tests of candidate optical components are currently underway.

Quality control of EUVE databases

NASA Technical Reports Server (NTRS)

John, L. M.; Drake, J.

1992-01-01

The publicly accessible databases for the Extreme Ultraviolet Explorer include: the EUVE Archive mailserver; the CEA ftp site; the EUVE Guest Observer Mailserver; and the Astronomical Data System node. The EUVE Performance Assurance team is responsible for verifying that these public EUVE databases are working properly, and that the public availability of EUVE data contained therein does not infringe any data rights which may have been assigned. In this poster, we describe the Quality Assurance (QA) procedures we have developed from the approach of QA as a service organization, thus reflecting the overall EUVE philosophy of Quality Assurance integrated into normal operating procedures, rather than imposed as an external, post facto, control mechanism.

Ultra-short wavelength x-ray system

DOEpatents

Umstadter, Donald [Ann Arbor, MI; He, Fei [Ann Arbor, MI; Lau, Yue-Ying [Potomac, MD

2008-01-22

A method and apparatus to generate a beam of coherent light including x-rays or XUV by colliding a high-intensity laser pulse with an electron beam that is accelerated by a synchronized laser pulse. Applications include x-ray and EUV lithography, protein structural analysis, plasma diagnostics, x-ray diffraction, crack analysis, non-destructive testing, surface science and ultrafast science.

EUV high resolution imager on-board solar orbiter: optical design and detector performances

NASA Astrophysics Data System (ADS)

Halain, J. P.; Mazzoli, A.; Rochus, P.; Renotte, E.; Stockman, Y.; Berghmans, D.; BenMoussa, A.; Auchère, F.

2017-11-01

The EUV high resolution imager (HRI) channel of the Extreme Ultraviolet Imager (EUI) on-board Solar Orbiter will observe the solar atmospheric layers at 17.4 nm wavelength with a 200 km resolution. The HRI channel is based on a compact two mirrors off-axis design. The spectral selection is obtained by a multilayer coating deposited on the mirrors and by redundant Aluminum filters rejecting the visible and infrared light. The detector is a 2k x 2k array back-thinned silicon CMOS-APS with 10 μm pixel pitch, sensitive in the EUV wavelength range. Due to the instrument compactness and the constraints on the optical design, the channel performance is very sensitive to the manufacturing, alignments and settling errors. A trade-off between two optical layouts was therefore performed to select the final optical design and to improve the mirror mounts. The effect of diffraction by the filter mesh support and by the mirror diffusion has been included in the overall error budget. Manufacturing of mirror and mounts has started and will result in thermo-mechanical validation on the EUI instrument structural and thermal model (STM). Because of the limited channel entrance aperture and consequently the low input flux, the channel performance also relies on the detector EUV sensitivity, readout noise and dynamic range. Based on the characterization of a CMOS-APS back-side detector prototype, showing promising results, the EUI detector has been specified and is under development. These detectors will undergo a qualification program before being tested and integrated on the EUI instrument.

Sensitizers in EUV chemically amplified resist: mechanism of sensitivity improvement

NASA Astrophysics Data System (ADS)

Vesters, Yannick; Jiang, Jing; Yamamoto, Hiroki; De Simone, Danilo; Kozawa, Takahiro; De Gendt, Stefan; Vandenberghe, Geert

2018-03-01

EUV lithography utilizes photons with 91.6 eV energy to ionize resists, generate secondary electrons, and enable electron driven reactions that produce acid in chemically amplified photoresist. Efficiently using the available photons is of key importance. Unlike DUV lithography, where photons are selectively utilized by photoactive compounds, photons at 13.5nm wavelength ionize almost all materials. Nevertheless, specific elements have a significantly higher atomic photon-absorption cross section at 91.6 eV. To increase photon absorption, sensitizer molecules, containing highly absorbing elements, can be added to photoresist formulations. These sensitizers have gained growing attention in recent years, showing significant sensitivity improvement. But there are few experimental evidences that the sensitivity improvement is due to the higher absorption only, as adding metals salts into the resist formulation can induce other mechanisms, like modification of the dissolution rate, potentially affecting patterning performance. In this work, we used different sensitizers in chemically amplified resist. We measured experimentally the absorption of EUV light, the acid yield, the dissolution rate and the patterning performance of the resists. Surprisingly, the absorption of EUV resist was decreased with addition of metal salt sensitizers. Nevertheless, the resist with sensitizer showed a higher acid yield. Sensitizer helps achieving higher PAG conversion to acid, notably due to an increase of the secondary electron generation. Patterning data confirm a significant sensitivity improvement, but at the cost of roughness degradation at high sensitizer loading. This can be explained by the chemical distribution of the sensitizer in the resist combined with a modification of the dissolution contrast, as observed by Dissolution Rate Monitor.

SUMER: Solar Ultraviolet Measurements of Emitted Radiation

NASA Technical Reports Server (NTRS)

Wilhelm, K.; Axford, W. I.; Curdt, W.; Gabriel, A. H.; Grewing, M.; Huber, M. C. E.; Jordan, M. C. E.; Lemaire, P.; Marsch, E.; Poland, A. I.

1988-01-01

The SUMER (solar ultraviolet measurements of emitted radiation) experiment is described. It will study flows, turbulent motions, waves, temperatures and densities of the plasma in the upper atmosphere of the Sun. Structures and events associated with solar magnetic activity will be observed on various spatial and temporal scales. This will contribute to the understanding of coronal heating processes and the solar wind expansion. The instrument will take images of the Sun in EUV (extreme ultra violet) light with high resolution in space, wavelength and time. The spatial resolution and spectral resolving power of the instrument are described. Spectral shifts can be determined with subpixel accuracy. The wavelength range extends from 500 to 1600 angstroms. The integration time can be as short as one second. Line profiles, shifts and broadenings are studied. Ratios of temperature and density sensitive EUV emission lines are established.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battum, LJ van; Heukelom, S

Purpose This study investigates the origin of lateral optical density (OD) variation for Gafchromic film (EBT and EBT2) scanned in transmission mode with Epson flatbed scanners (1680 Expression Pro and 10000XL). Effects investigated are: cross talk, optical path length and polarization. Methods Cross talk has been examined with triangular shaped light-transmission sheets with OD ranging from 0 to opaque. Optical path length has been studied with absorptive and reflective OD-filters (OD range 0.2 to 2.0). Dependency on light-polarization on the scanner read out has been investigated using linear polarizer sheets. All experiments have been performed at centre scanner position (normmore » point) and at several lateral scan positions, without and with (un)irradiated EBT-film. Dose values used ranged between 0.2 to 9 Gy, yielding an OD-range between 0.25 to 1.1. Results The lateral OD variation is dose dependent and increases up to 14% at most lateral position for dose up to 9 Gy. Cross talk effect contributes to 0.5% in clinical used OD ranges but equals 2% for extreme high dose gradients. Film induced optical path length will effect the lateral OD variation up to 3% at most lateral points. Light polarization is inherent present in these scanners due to multiple reflection on mirrors. In addition film induced polarization is the most important effect generating the observed lateral OD variation. Both Gafchromic film base and sensitive layer have polarizing capabilities; for the sensitive layer its influence is dose dependent. Conclusions Lateral OD variation origins from optical physics (i.e. polarization and reflection) related to scanner and film construction. Cross talk can be ignored in film dosimetry for clinical used dose values and gradients. Therefore it is recommended to determine the lateral OD variation per film type and scanner.« less

How flatbed scanners upset accurate film dosimetry

NASA Astrophysics Data System (ADS)

van Battum, L. J.; Huizenga, H.; Verdaasdonk, R. M.; Heukelom, S.

2016-01-01

Film is an excellent dosimeter for verification of dose distributions due to its high spatial resolution. Irradiated film can be digitized with low-cost, transmission, flatbed scanners. However, a disadvantage is their lateral scan effect (LSE): a scanner readout change over its lateral scan axis. Although anisotropic light scattering was presented as the origin of the LSE, this paper presents an alternative cause. Hereto, LSE for two flatbed scanners (Epson 1680 Expression Pro and Epson 10000XL), and Gafchromic film (EBT, EBT2, EBT3) was investigated, focused on three effects: cross talk, optical path length and polarization. Cross talk was examined using triangular sheets of various optical densities. The optical path length effect was studied using absorptive and reflective neutral density filters with well-defined optical characteristics (OD range 0.2-2.0). Linear polarizer sheets were used to investigate light polarization on the CCD signal in absence and presence of (un)irradiated Gafchromic film. Film dose values ranged between 0.2 to 9 Gy, i.e. an optical density range between 0.25 to 1.1. Measurements were performed in the scanner’s transmission mode, with red-green-blue channels. LSE was found to depend on scanner construction and film type. Its magnitude depends on dose: for 9 Gy increasing up to 14% at maximum lateral position. Cross talk was only significant in high contrast regions, up to 2% for very small fields. The optical path length effect introduced by film on the scanner causes 3% for pixels in the extreme lateral position. Light polarization due to film and the scanner’s optical mirror system is the main contributor, different in magnitude for the red, green and blue channel. We concluded that any Gafchromic EBT type film scanned with a flatbed scanner will face these optical effects. Accurate dosimetry requires correction of LSE, therefore, determination of the LSE per color channel and dose delivered to the film.

Discovery of superluminal velocities of X-rays and Bharat Radiation challenging the validity of Einstein's formula E= mc2

NASA Astrophysics Data System (ADS)

Rao, M. A. Padmanabha

2013-09-01

The current paper reports discovery of superluminal velocities of X-rays, and Bharat Radiation in 12.87 to 31 nm range from solar spectra. The discovery challenges the 100 year old Albert Einstein's assertion that nothing can go faster than velocity of light c in vacuum while formulating E = mc2 in his special theory of relativity reported in 1905 [1]. Several solar spectra recorded at various wavelengths by Woods et al in 2011 demonstrated GOES X-rays arriving earlier than 13.5 nm emission, which in turn arriving earlier than 33.5 nm emission [2]. Finally, the investigators faced difficulty in concluding that short wavelengths traveled fast because of lack of information whether all the three emissions originated from the same source and at the same time. Very recently the author has reported GOES X-rays (7.0 nm) cause 13.5 nm (Bharat Radiation), which in turn causes 33.5 nm Extreme ultraviolet (EUV) emission from same excited atoms present in solar flare by Padmanabha Rao Effect [3, 4]. Based on these findings, the author succeeded in explaining how the solar spectral findings provide direct evidences on superluminal velocities of GOES X-ray and 13.5 nm Bharat Radiation emissions, when 33.5 nm EUV emission is considered travelling at velocity of light c. Among X-ray wavelengths, the short wavelength 7.0 nm X-rays traveled faster than 9.4 nm X-rays, while X-rays go at superluminal velocities. Among Bharat radiation wavelengths, short wavelengths showed fast travel, while Bharat Radiation goes at superluminal velocities as compared to 33.5 EUV emission.

A Search for EUV Emission from the O4f Star Zeta Puppis

NASA Technical Reports Server (NTRS)

Waldron, Wayne L.; Vallerga, John

1996-01-01

We obtained a 140 ks EUVE observation of the O4f star, zeta Puppis. Because of its low ISM column density and highly ionized stellar wind, a unique EUV window is accessible for viewing between 128 to 140 A, suggesting that this star may he the only O star observable with the EUVE. Although no SW spectrometer wavelength bin had a signal to noise greater than 3, a bin at 136 A had a signal to noise of 2.4. This bin is where models predict the brightest line due to OV emission should occur. We present several EUV line emission models. These models were constrained by fitting the ROSAT PSPC X-ray data and our EUVE data. If the OV emission is real, the best fits to the data suggest that there are discrepancies in our current understanding of EUV/X-ray production mechanisms. In particular, the emission measure of the EUV source is found to be much greater than the total wind emission measure, suggesting that the EUV shock must produce a very large density enhancement. In addition, the location of the EUV and X-ray shocks are found to be separated by approx. 0.3 stellar radii, but the EUV emission region is found to be approx. 400 times larger than the X-ray emission region. We also discuss the implications of a null detection and present relevant upper limits.

PECULIAR STATIONARY EUV WAVE FRONTS IN THE ERUPTION ON 2011 MAY 11

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandra, R.; Fulara, A.; Chen, P. F.

We present and interpret the observations of extreme ultraviolet (EUV) waves associated with a filament eruption on 2011 May 11. The filament eruption also produces a small B-class two ribbon flare and a coronal mass ejection. The event is observed by the Solar Dynamic Observatory with high spatio-temporal resolution data recorded by the Atmospheric Imaging Assembly. As the filament erupts, we observe two types of EUV waves (slow and fast) propagating outwards. The faster EUV wave has a propagation velocity of ∼500 km s{sup −1} and the slower EUV wave has an initial velocity of ∼120 km s{sup −1}. Wemore » report, for the first time, that not only does the slower EUV wave stop at a magnetic separatrix to form bright stationary fronts, but also the faster EUV wave transits a magnetic separatrix, leaving another stationary EUV front behind.« less

Portable NIR bottled liquid explosive detector

NASA Astrophysics Data System (ADS)

Itozaki, Hideo; Ono, Masaki; Ito, Shiori; Uekawa, Keisuke; Miyato, Yuji; Sato-Akaba, Hideo

2016-05-01

A near infrared bottled liquid scanner has been developed for security check at airports for anti-terrorism. A compact handheld liquid scanner has been developed using an LED as a light source, instead of a halogen lamp. An LED has much smaller size, longer life time and lower power consumption than those of the lamp. However, it has narrower wave band. Here, we tried to use LEDs to scan liquids and showed the possibility that LEDs can be used as a light source of liquid detector.

Soft x-ray properties of the binary millisecond pulsar J0437-4715

NASA Technical Reports Server (NTRS)

Halpern, Jules P.; Martin, Christopher; Marshall, Herman L.

1995-01-01

We obtained a light curve for the 5.75 ms pulsar J0437-4715 in the 65-120 A range with 0.5 ms time resolution using the Deep Survey instrument on the EUVE satellite. The single-peaked profile has a pulsed fraction of 0. 27 +/- 0.05, similar to the ROSAT data in the overlapping energy band. A combined analysis of the EUVE and ROSAT data is consistent with a power-law spectrum of energy index alpha = 1.2-1.5, intervening column density NH = (5-8) x 10(exp 19)/sq cm, and luminosity 5.0 x 10(exp 30) ergs/s in the 0.1-2. 4 keV band. We also use a bright EUVE/ROSAT source only 4.3 deg from the pulsar, the Seyfert galaxy RX J0437.4-4711 (= EUVE J0437-471 = lES 0435-472), to obtain an independent upper limit on the intervening absorption to the pulsar, NH less than 1.2 x 10(exp 20)/sq cm. Although a blackbody spectrum fails to fit the ROSAT data, two-component spectral fits to the combined EUVE/ROSAT data are used to limit the temperatures and surface areas of thermal emission that might make partial contributions to the flux. A hot polar cap of radius 50-600 m and temperature (1.0-3.3) x 10(exp 6) K could be present. Alternatively, a larger region with T = (4-12) x 10(exp 5) K and area less than 200 sq km, might contribute most of the EUVE and soft X-ray flux, but only if a hotter component were present as well. Any of these temperatures would require some mechanism(s) of surface reheating to be operating in this old pulsar, the most plausible being the impact of accelerated electrons and positrons onto the polar caps. The kinematically corrected spin-down power of PSR J0437-4715 is only 4 x 10(exp 33) ergs/s, which is an order of magnitude less than that of the lowest-luminosity gamma-ray pulsars Geminga and PSR B1055-52. The absence of high-energy gamma-rays from PSR J0437-4715 might signify an inefficient or dead outer gap accelerator, which in turn accounts for the lack of a more luminous reheated surface such as those intermediate-age gamma-ray pulsars may have.

Soft X-Ray Properties of the Binary Millisecond Pulsar J0437-4715

NASA Technical Reports Server (NTRS)

Halpern, Jules P.; Martin, Christopher; Marshall, Herman, L.; Oliversen, Ronald (Technical Monitor)

2001-01-01

We obtained a light curve for the 5.75 ms pulsar J0437-4715 in the 65-120 A range with 0.5 ms time resolution using the Deep Survey instrument on the EUVE satellite. The single-peaked profile has a pulsed fraction of 0.27 +/- 0.05, similar to the ROSAT data in the overlapping energy band. A combined analysis of the EUVE and ROSAT data is consistent with a power-law spectrum of energy index alpha = 1.2 - 1.5, intervening column density N(sub H) = (5 - 8) x 10(exp 19)/sq cm, and luminosity 5.0 x 10(exp 30) ergs/s in the 0.1 - 2.4 keV band. We also use a bright EUVE/ROSAT source only 4.2 min. from the pulsar, the Seyfert galaxy RX J0437.4-4711 (= EUVE J0437-471 = IES 0435-472), to obtain an independent upper limit on the intervening absorption to the pulsar, N(sub H) less than 1.2 x 10(exp 20)/sq cm. Although a blackbody spectrum fails to fit the ROSAT data, two-component spectral fits to the combined EUVE/ROSAT data are used to limit the temperatures and surface areas of thermal emission that might make partial contributions to the flux. A hot polar cap of radius 50 - 600 m and temperature (1.0 - 3.3) x 10(exp 6) K could be present. Alternatively, a larger region with T = (4 - 12) x 10(exp 5) K and area less than 200 sq km, might contribute most of the EUVE and soft X-ray flux, but only if a hotter component were present as well. Any of these temperatures would require some mechanism(s) of surface reheating to be operating in this old pulsar, the most plausible being the impact of accelerated electrons and positrons onto the polar caps. The kinematically corrected spin-down power of PSR J0437-4715 is only 4 x 10(exp 33) ergs/s, which is an order of magnitude less than that of the lowest-luminosity gamma-ray pulsars Geminga and PSR B1055-52. The absence of high-energy gamma-rays from PSR J0437-4715 might signify an inefficient or dead outer gap accelerator, which in turn accounts for the lack of a more luminous reheated surface such as those intermediate-age gamma-ray pulsars may have.

Selected highlights from the Extreme Ultraviolet Explorer

NASA Technical Reports Server (NTRS)

Bowyer, S.; Malina, R. F.

1995-01-01

We present a few scientific highlights from the Extreme Ultraviolet Explorer (EUVE) all-sky and deep surveys, from the EUVE Righ Angle Program, and from the EUVE Guest Observer Program. The First EUVE Source Catalog includes 410 extreme ultraviolet (EUV) sources detected in the initial processing of the EUVE all-sky data. A program of optical identification indicates that counterparts include cool star coronae, flare stars, hot white dwarfs, central stars of planetary nebulae, B star photospheres and winds, an X-ray binary, extragalactic objects (active galactic nuclei, BL Lacertae), solar system objects (Moon, Mars, Io,), supernova remnants, and two novae.

Analytical techniques for mechanistic characterization of EUV photoresists

NASA Astrophysics Data System (ADS)

Grzeskowiak, Steven; Narasimhan, Amrit; Murphy, Michael; Ackerman, Christian; Kaminsky, Jake; Brainard, Robert L.; Denbeaux, Greg

2017-03-01

Extreme ultraviolet (EUV, 13.5 nm) lithography is the prospective technology for high volume manufacturing by the microelectronics industry. Significant strides towards achieving adequate EUV source power and availability have been made recently, but a limited rate of improvement in photoresist performance still delays the implementation of EUV. Many fundamental questions remain to be answered about the exposure mechanisms of even the relatively well understood chemically amplified EUV photoresists. Moreover, several groups around the world are developing revolutionary metal-based resists whose EUV exposure mechanisms are even less understood. Here, we describe several evaluation techniques to help elucidate mechanistic details of EUV exposure mechanisms of chemically amplified and metal-based resists. EUV absorption coefficients are determined experimentally by measuring the transmission through a resist coated on a silicon nitride membrane. Photochemistry can be evaluated by monitoring small outgassing reaction products to provide insight into photoacid generator or metal-based resist reactivity. Spectroscopic techniques such as thin-film Fourier transform infrared (FTIR) spectroscopy can measure the chemical state of a photoresist system pre- and post-EUV exposure. Additionally, electrolysis can be used to study the interaction between photoresist components and low energy electrons. Collectively, these techniques improve our current understanding of photomechanisms for several EUV photoresist systems, which is needed to develop new, better performing materials needed for high volume manufacturing.

Phase-Sensitive Control Of Molecular Dissociation Through Attosecond Pump/Strong-Field Mid-IR Probe Spectroscopy

DTIC Science & Technology

2016-04-15

overarching goal of our program was to develop a novel laser and ion spectroscopy system and to use it for the study of strong-field light-matter...are accelerated into the ion TOF by means of a Fig. I.1 Schematic of ion spectroscopy with two color (EUV + mid-IR) laser fields, as constructed at...Abstract The overarching goal of our program was to develop a novel laser and ion spectroscopy system and to use it for the study of strong-field light

Superwide-angle coverage code-multiplexed optical scanner.

PubMed

Riza, Nabeel A; Arain, Muzammil A

2004-05-01

A superwide-angle coverage code-multiplexed optical scanner is presented that has the potential to provide 4 pi-sr coverage. As a proof-of-concept experiment, an angular scan range of 288 degrees for six randomly distributed beams is demonstrated. The proposed scanner achieves its superwide coverage by exploiting a combination of phase-encoded transmission and reflection holography within an in-line hologram recording-retrieval geometry. The basic scanner unit consists of one phase-only digital mode spatial light modulator for code entry (i.e., beam scan control) and a holographic material from which we obtained what we believe is the first-of-a-kind extremely wide coverage, low component count, high speed (e.g., microsecond domain), and large aperture (e.g., > 1-cm diameter) scanner.

Modeling and measurement of hydrogen radical densities of in situ plasma-based Sn cleaning source

NASA Astrophysics Data System (ADS)

Elg, Daniel T.; Panici, Gianluca A.; Peck, Jason A.; Srivastava, Shailendra N.; Ruzic, David N.

2017-04-01

Extreme ultraviolet (EUV) lithography sources expel Sn debris. This debris deposits on the collector optic used to focus the EUV light, lowering its reflectivity and EUV throughput to the wafer. Consequently, the collector must be cleaned, causing source downtime. To solve this, a hydrogen plasma source was developed to clean the collector in situ by using the collector as an antenna to create a hydrogen plasma and create H radicals, which etch Sn as SnH4. This technique has been shown to remove Sn from a 300-mm-diameter stainless steel dummy collector. The H radical density is of key importance in Sn etching. The effects of power, pressure, and flow on radical density are explored. A catalytic probe has been used to measure radical density, and a zero-dimensional model is used to provide the fundamental science behind radical creation and predict radical densities. Model predictions and experimental measurements are in good agreement. The trends observed in radical density, contrasted with measured Sn removal rates, show that radical density is not the limiting factor in this etching system; other factors, such as SnH4 redeposition and energetic ion bombardment, must be more fully understood in order to predict removal rates.

Mask fabrication and its applications to extreme ultra-violet diffractive optics

NASA Astrophysics Data System (ADS)

Cheng, Yang-Chun

Short-wavelength radiation around 13nm of wavelength (Extreme Ultra-Violet, EUV) is being considered for patterning microcircuits, and other electronic chips with dimensions in the nanometer range. Interferometric Lithography (IL) uses two beams of radiation to form high-resolution interference fringes, as small as half the wavelength of the radiation used. As a preliminary step toward manufacturing technology, IL can be used to study the imaging properties of materials in a wide spectral range and at nanoscale dimensions. A simple implementation of IL uses two transmission diffraction gratings to form the interference pattern. More complex interference patterns can be created by using different types of transmission gratings. In this thesis, I describe the development of a EUV lithography system that uses diffractive optical elements (DOEs), from simple gratings to holographic structures. The exposure system is setup on a EUV undulator beamline at the Synchrotron Radiation Center, in the Center for NanoTechnology clean room. The setup of the EUV exposure system is relatively simple, while the design and fabrication of the DOE "mask" is complex, and relies on advanced nanofabrication techniques. The EUV interferometric lithography provides reliable EUV exposures of line/space patterns and is ideal for the development of EUV resist technology. In this thesis I explore the fabrication of these DOE for the EUV range, and discuss the processes I have developed for the fabrication of ultra-thin membranes. In addition, I discuss EUV holographic lithography and generalized Talbot imaging techniques to extend the capability of our EUV-IL system to pattern arbitrary shapes, using more coherent sources than the undulator. In a series of experiments, we have demonstrated the use of a soft X-ray (EUV) laser as effective source for EUV lithography. EUV-IL, as implemented at CNTech, is being used by several companies and research organizations to characterize photoresist materials.

Surface Inhomogeneities of the White Dwarf in the Binary EUVE J2013+400

NASA Astrophysics Data System (ADS)

Vennes, Stephane

We propose to study the white dwarf in the binary EUVE J2013+400. The object is paired with a dMe star and new extreme ultraviolet (EUV) observations will offer critical insights into the properties of the white dwarf. The binary behaves, in every other aspects, like its siblings EUVE J0720-317 and EUVE J1016-053 and new EUV observations will help establish their class properties; in particular, EUV photometric variations in 0720-317 and 1016-053 over a period of 11 hours and 57 minutes, respectively, are indicative of surface abundance inhomogeneities coupled with the white dwarfs rotation period. These variations and their large photospheric helium abundance are best explained by a diffusion-accretion model in which time-variable accretion and possible coupling to magnetic poles contribute to abundance variations across the surface and possibly as a function of depth. EUV spectroscopy will also enable a study of the helium abundance as a function of depth and a detailed comparison with theoretical diffusion profile.

Using synchrotron light to accelerate EUV resist and mask materials learning

NASA Astrophysics Data System (ADS)

Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Jones, Gideon; McClinton, Brittany; Miyakawa, Ryan; Mochi, Iacopo; Montgomery, Warren; Rekawa, Seno; Wallow, Tom

2011-03-01

As commercialization of extreme ultraviolet lithography (EUVL) progresses, direct industry activities are being focused on near term concerns. The question of long term extendibility of EUVL, however, remains crucial given the magnitude of the investments yet required to make EUVL a reality. Extendibility questions are best addressed using advanced research tools such as the SEMATECH Berkeley microfield exposure tool (MET) and actinic inspection tool (AIT). Utilizing Lawrence Berkeley National Laboratory's Advanced Light Source facility as the light source, these tools benefit from the unique properties of synchrotron light enabling research at nodes generations ahead of what is possible with commercial tools. The MET for example uses extremely bright undulator radiation to enable a lossless fully programmable coherence illuminator. Using such a system, resolution enhancing illuminations achieving k1 factors of 0.25 can readily be attained. Given the MET numerical aperture of 0.3, this translates to an ultimate resolution capability of 12 nm. Using such methods, the SEMATECH Berkeley MET has demonstrated resolution in resist to 16-nm half pitch and below in an imageable spin-on hard mask. At a half pitch of 16 nm, this material achieves a line-edge roughness of 2 nm with a correlation length of 6 nm. These new results demonstrate that the observed stall in ultimate resolution progress in chemically amplified resists is a materials issue rather than a tool limitation. With a resolution limit of 20-22 nm, the CAR champion from 2008 remains as the highest performing CAR tested to date. To enable continued advanced learning in EUV resists, SEMATECH has initiated a plan to implement a 0.5 NA microfield tool at the Advanced Light Source synchrotron facility. This tool will be capable of printing down to 8-nm half pitch.

Time-resolved Emission from Bright Hot Pixels of an Active Region Observed in the EUV Band with SDO/AIA and Multi-stranded Loop Modeling

NASA Astrophysics Data System (ADS)

Tajfirouze, E.; Reale, F.; Petralia, A.; Testa, P.

2016-01-01

Evidence of small amounts of very hot plasma has been found in active regions and might be an indication of impulsive heating released at spatial scales smaller than the cross-section of a single loop. We investigate the heating and substructure of coronal loops in the core of one such active region by analyzing the light curves in the smallest resolution elements of solar observations in two EUV channels (94 and 335 Å) from the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory. We model the evolution of a bundle of strands heated by a storm of nanoflares by means of a hydrodynamic 0D loop model (EBTEL). The light curves obtained from a random combination of those of single strands are compared to the observed light curves either in a single pixel or in a row of pixels, simultaneously in the two channels, and using two independent methods: an artificial intelligent system (Probabilistic Neural Network) and a simple cross-correlation technique. We explore the space of the parameters to constrain the distribution of the heat pulses, their duration, their spatial size, and, as a feedback on the data, their signatures on the light curves. From both methods the best agreement is obtained for a relatively large population of events (1000) with a short duration (less than 1 minute) and a relatively shallow distribution (power law with index 1.5) in a limited energy range (1.5 decades). The feedback on the data indicates that bumps in the light curves, especially in the 94 Å channel, are signatures of a heating excess that occurred a few minutes before.

A new mask exposure and analysis facility

NASA Astrophysics Data System (ADS)

te Sligte, Edwin; Koster, Norbert; Deutz, Alex; Staring, Wilbert

2014-10-01

The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable of exposing and analyzing EUV masks. The proposed system architecture is similar to the EBL system which has been operated jointly by TNO and Carl Zeiss SMT since 2005. EBL2 contains an EUV Beam Line, in which samples can be exposed to EUV irradiation in a controlled environment. Attached to this Beam Line is an XPS system, which can be reached from the Beam Line via an in-vacuum transfer system. This enables surface analysis of exposed masks without breaking vacuum. Automated handling with dual pods is foreseen so that exposed EUV masks will still be usable in EUV lithography tools to assess the imaging impact of the exposure. Compared to the existing system, large improvements in EUV power, intensity, reliability, and flexibility are proposed. Also, in-situ measurements by e.g. ellipsometry is foreseen for real time monitoring of the sample condition. The system shall be equipped with additional ports for EUVR or other analysis tools. This unique facility will be open for external customers and other research groups.

Novel EUV photoresist for sub-7nm node (Conference Presentation)

NASA Astrophysics Data System (ADS)

Furukawa, Tsuyoshi; Naruoka, Takehiko; Nakagawa, Hisashi; Miyata, Hiromu; Shiratani, Motohiro; Hori, Masafumi; Dei, Satoshi; Ayothi, Ramakrishnan; Hishiro, Yoshi; Nagai, Tomoki

2017-04-01

Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). Especially high sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And also metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

EUVE and IR observations of the Polars HU Aqr and AR UMa

NASA Astrophysics Data System (ADS)

Howell, S.; Ciardi, D.

1999-12-01

Simultaneous EUVE and ground-based near-infrared J and K observations of the magnetic CV HU Aqr were performed. The observations occurred during a super-high state never before observed in HU Aqr. The average EUVE count-rate was 30-60 times higher than had been measured previously, allowing us to present the first ever EUV spectra of HU Aqr. The near-infrared observations show a corresponding flux increase of 2-3 times over previous J and K observations. However, the near-infrared eclipse minimum during this super-high state are the same as seen in previous observations, indicating that the eclipse in the near-infrared is total. We present a detailed comparison of the EUV and near-infrared emission of HU Aqr as a function of orbital phase and discuss the geometry and physical properties of the high energy and infrared emitting regions. AR UMa is the brightest EUV source yet observed with the EUVE satellite and is also the polar with the largest magnetic field, 250 MG. EUVE observations of the polar AR UMa have allowed, for the first time, EUV time-resolved spectral analysis and radial velocity measurements. We present EUV phase-resolved photometry and spectroscopy and show that the He 304 emission line is not produced on the heated face of the secondary star, but emanates from the inner illuminated regions of the coupling region and accretion stream. We comment on the overall structure of the accretion geometry as well. The authors acknowledge partial support of the research by NASA cooperative agreement NCC5-138 via an EUVE guest Observer mini-grant.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bitter, M; Hill, K W; Scott, S

This paper consists of two parts: Part I describes the working principle of a recently developed x-ray imaging crystal spectrometer, where the astigmatism of spherically bent crystals is being used with advantage to record spatially resolved spectra of highly charged ions for Doppler measurements of the ion-temperature and toroidal plasmarotation- velocity profiles in tokamak plasmas. This type of spectrometer was thoroughly tested on NSTX and Alcator C-Mod, and its concept was recently adopted for the design of the ITER crystal spectrometers. Part II describes imaging schemes, where the astigmatism has been eliminated by the use of matched pairs of sphericallymore » bent crystals or reflectors. These imaging schemes are applicable over a wide range of the electromagnetic radiation, which includes microwaves, visible light, EUV radiation, and x-rays. Potential applications with EUV radiation and x-rays are the diagnosis of laserproduced plasmas, imaging of biological samples with synchrotron radiation, and lithography.« less

On the Link between the Release of Solar Energetic Particles Measured at Widespread Heliolongitudes and the Properties of the Associated Coronal Shocks

NASA Astrophysics Data System (ADS)

Lario, D.; Kwon, R.-Y.; Riley, P.; Raouafi, N. E.

2017-10-01

Under the paradigm that the main agents in the acceleration of solar energetic particles (SEPs) are shocks initially driven by coronal mass ejections, we analyze whether the properties of the shocks in the corona inferred from combining extreme-ultraviolet (EUV) and white-light (WL) observations from multiple vantage points together with magnetohydrodynamic (MHD) simulations of the corona can be used to determine the release of SEPs into different regions of the heliosphere and hence determine the longitudinal extent of the SEP events. We analyze the SEP events observed on 2011 November 3, 2013 April 11, and 2014 February 25 over a wide range of heliolongitudes. MHD simulations provide the characteristics of the background medium where shocks propagate, in particular the Alfvén and sound speed profiles that allow us to determine both the extent of the EUV waves in the low corona and the fast magnetosonic Mach number (M FM) of the shocks. The extent of the EUV waves in the low corona is controlled by this background medium and does not coincide with the extent of the SEP events in the heliosphere. Within the uncertainties of (I) the extent and speed of the shock inferred from EUV and WL images and (II) the assumptions made in the MHD models, we follow the evolution of M FM at the region of the shock magnetically connected to each spacecraft. The estimated release times of the first SEPs measured by each spacecraft does not coincide with the time when the M FM at this region exceeds a given threshold.

On the Link between the Release of Solar Energetic Particles Measured at Widespread Heliolongitudes and the Properties of the Associated Coronal Shocks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lario, D.; Kwon, R.-Y.; Raouafi, N. E.

Under the paradigm that the main agents in the acceleration of solar energetic particles (SEPs) are shocks initially driven by coronal mass ejections, we analyze whether the properties of the shocks in the corona inferred from combining extreme-ultraviolet (EUV) and white-light (WL) observations from multiple vantage points together with magnetohydrodynamic (MHD) simulations of the corona can be used to determine the release of SEPs into different regions of the heliosphere and hence determine the longitudinal extent of the SEP events. We analyze the SEP events observed on 2011 November 3, 2013 April 11, and 2014 February 25 over a widemore » range of heliolongitudes. MHD simulations provide the characteristics of the background medium where shocks propagate, in particular the Alfvén and sound speed profiles that allow us to determine both the extent of the EUV waves in the low corona and the fast magnetosonic Mach number ( M {sub FM}) of the shocks. The extent of the EUV waves in the low corona is controlled by this background medium and does not coincide with the extent of the SEP events in the heliosphere. Within the uncertainties of (i) the extent and speed of the shock inferred from EUV and WL images and (ii) the assumptions made in the MHD models, we follow the evolution of M {sub FM} at the region of the shock magnetically connected to each spacecraft. The estimated release times of the first SEPs measured by each spacecraft does not coincide with the time when the M {sub FM} at this region exceeds a given threshold.« less

High-resolution He I 10830 Å Narrowband Imaging for an M-class Flare. II. Multiple Hot Channels: Their Origin and Destination

NASA Astrophysics Data System (ADS)

Wang, Ya; Su, Yingna; Shen, Jinhua; Yang, Xu; Cao, Wenda; Ji, Haisheng

2018-06-01

In this paper, we report our second-part result for the M1.8 class flare on 2012 July 5, with an emphasis on the initiation process for the flare-associated filament eruption. The data set consists of high-resolution narrowband images in He I 10830 Å and broadband images in TiO 7057 Å taken at Big Bear Solar Observatory with the 1.6 m aperture Goode Solar Telescope. EUV images in different passbands observed by the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory are used to distinguish hot plasma from cool plasma structures during the flare process. High-resolution 10830 Å images clearly show that, below the horizontal fibrils, which correspond to the filament’s spine in full-disk Hα images, a sheared arch filament system (AFS) lies across the penumbra and surrounding satellite sunspots, between which continuous shearing motion is observed. Before the eruption, three microflares occurred successively and were followed by the appearance of three EUV hot channels. Two hot channels erupted, producing two flaring sites and two major peaks in GOES soft X-ray light curves; however, one hot channel’s eruption failed. The 10830 Å imaging enables us to trace the first two hot channels to their very early stage, which is signified by the rising of the AFS after the first two precursors. Continuous flux emergence and localized flare-associated cancellation are observed under the AFS. In addition, EUV ejections were observed during the formation of the EUV hot channels. These observations support the fact that the hot channels are the result of magnetic reconnections during precursors.

The Coronal Analysis of SHocks and Waves (CASHeW) framework

NASA Astrophysics Data System (ADS)

Kozarev, Kamen A.; Davey, Alisdair; Kendrick, Alexander; Hammer, Michael; Keith, Celeste

2017-11-01

Coronal bright fronts (CBF) are large-scale wavelike disturbances in the solar corona, related to solar eruptions. They are observed (mostly in extreme ultraviolet (EUV) light) as transient bright fronts of finite width, propagating away from the eruption source location. Recent studies of individual solar eruptive events have used EUV observations of CBFs and metric radio type II burst observations to show the intimate connection between waves in the low corona and coronal mass ejection (CME)-driven shocks. EUV imaging with the atmospheric imaging assembly instrument on the solar dynamics observatory has proven particularly useful for detecting large-scale short-lived CBFs, which, combined with radio and in situ observations, holds great promise for early CME-driven shock characterization capability. This characterization can further be automated, and related to models of particle acceleration to produce estimates of particle fluxes in the corona and in the near Earth environment early in events. We present a framework for the coronal analysis of shocks and waves (CASHeW). It combines analysis of NASA Heliophysics System Observatory data products and relevant data-driven models, into an automated system for the characterization of off-limb coronal waves and shocks and the evaluation of their capability to accelerate solar energetic particles (SEPs). The system utilizes EUV observations and models written in the interactive data language. In addition, it leverages analysis tools from the SolarSoft package of libraries, as well as third party libraries. We have tested the CASHeW framework on a representative list of coronal bright front events. Here we present its features, as well as initial results. With this framework, we hope to contribute to the overall understanding of coronal shock waves, their importance for energetic particle acceleration, as well as to the better ability to forecast SEP events fluxes.

The extreme ultraviolet explorer mission

NASA Technical Reports Server (NTRS)

Malina, R. F.; Bowyer, S.

1988-01-01

The science design goals and engineering implementation for the Extreme Ultraviolet Explorer (EUVE) science payload are discussed. The primary scientific goal of the EUVE payload is to carry out an all-sky survey in the 100- to 900-A band of the spectrum. Another goal of the mission is to demonstrate the use of a scientific platform in near-earth orbit. EUVE data will be used to study the distribution of EUV stars in the neighborhood of the sun and the emission physics responsible for the EUV mission.

Characterization of extreme ultraviolet laser ablation mass spectrometry for actinide trace analysis and nanoscale isotopic imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, Tyler; Kuznetsov, Ilya; Willingham, David

The purpose of this research was to characterize Extreme Ultraviolet Time-of-Flight (EUV TOF) Laser Ablation Mass Spectrometry for high spatial resolution elemental and isotopic analysis. We compare EUV TOF results with Secondary Ionization Mass Spectrometry (SIMS) to orient the EUV TOF method within the overall field of analytical mass spectrometry. Using the well-characterized NIST 61x glasses, we show that the EUV ionization approach produces relatively few molecular ion interferences in comparison to TOF SIMS. We demonstrate that the ratio of element ion to element oxide ion is adjustable with EUV laser pulse energy and that the EUV TOF instrument hasmore » a sample utilization efficiency of 0.014%. The EUV TOF system also achieves a lateral resolution of 80 nm and we demonstrate this lateral resolution with isotopic imaging of closely spaced particles or uranium isotopic standard materials.« less

EUV Cross-Calibration Strategies for the GOES-R SUVI

NASA Astrophysics Data System (ADS)

Darnel, Jonathan; Seaton, Daniel

2016-10-01

The challenges of maintaining calibration for solar EUV instrumentation is well-known. The lack of standard calibration sources and the fact that most solar EUV telescopes are incapable of utilizing bright astronomical EUV sources for calibration make knowledge of instrument performance quite difficult. In the recent past, calibration rocket underflights have helped establish a calibration baseline. The EVE instrument on SDO for a time provided well-calibrated, high spectral resolution solar spectra for a broad range of the EUV, but has suffered a loss of coverage at the shorter wavelengths. NOAA's Solar UltraViolet Imager (SUVI), a solar EUV imager with similarities to SDO/AIA, will provide solar imagery over nearly an entire solar cycle. In order to maintain the scientific value of the SUVI's dataset, novel approaches to calibration are necessary. Here we demonstrate a suite of methods to cross-calibrate SUVI against other solar EUV instruments through the use of proxy solar spectra.

Objective for EUV microscopy, EUV lithography, and x-ray imaging

DOEpatents

Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

2016-05-03

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

Initial results from the extreme ultraviolet explorer

NASA Technical Reports Server (NTRS)

Bowyer, S.; Malina, R. F.

1993-01-01

Data obtained during the first five months of calibration and science operation of the Extreme Ultraviolet Explorer (EUVE) are presented. Spectra of an extragalactic object were obtained; the object is detectable to wavelenghts longer than 100 A, demonstrating that extragalactic EUV astronomy is possible. Spectra of a hot white dwarf, and a late-type star in quiescence and flaring are shown as examples of the type of spectrographic data obtainable with EUVE. Other objects for which broad band photometric mode data have been obtained and analyzed include an RS CVn star and several late-type stars. The backgrounds in the EUVE detectors are quite low and the character of the diffuse astronomical EUV background has been investigated using these very low rates. Evidence is presented showing that, contrary to previously published reports, EUVE is about three times more sensitive than the English Wide Field Camera in the short wavelength bandpass covered by both instruments. Only limited information has been extracted from the longer bandpasses coered only by EUVE. Nonetheless, the brightest EUV source in the sky, a B star, has been discovered and is detected only in these longer bandpasses.

Comparison of calibration strategies for optical 3D scanners based on structured light projection using a new evaluation methodology

NASA Astrophysics Data System (ADS)

Bräuer-Burchardt, Christian; Ölsner, Sandy; Kühmstedt, Peter; Notni, Gunther

2017-06-01

In this paper a new evaluation strategy for optical 3D scanners based on structured light projection is introduced. It can be used for the characterization of the expected measurement accuracy. Compared to the procedure proposed in the VDI/VDE guidelines for optical 3D measurement systems based on area scanning it requires less effort and provides more impartiality. The methodology is suitable for the evaluation of sets of calibration parameters, which mainly determine the quality of the measurement result. It was applied to several calibrations of a mobile stereo camera based optical 3D scanner. The performed calibrations followed different strategies regarding calibration bodies and arrangement of the observed scene. The results obtained by the different calibration strategies are discussed and suggestions concerning future work on this area are given.

Surface roughness control by extreme ultraviolet (EUV) radiation

NASA Astrophysics Data System (ADS)

Ahad, Inam Ul; Obeidi, Muhannad Ahmed; Budner, Bogusław; Bartnik, Andrzej; Fiedorowicz, Henryk; Brabazon, Dermot

2017-10-01

Surface roughness control of polymeric materials is often desirable in various biomedical engineering applications related to biocompatibility control, separation science and surface wettability control. In this study, Polyethylene terephthalate (PET) polymer films were irradiated with Extreme ultraviolet (EUV) photons in nitrogen environment and investigations were performed on surface roughness modification via EUV exposure. The samples were irradiated at 3 mm and 4 mm distance from the focal spot to investigate the effect of EUV fluence on topography. The topography of the EUV treated PET samples were studied by AFM. The detailed scanning was also performed on the sample irradiated at 3 mm. It was observed that the average surface roughness of PET samples was increased from 9 nm (pristine sample) to 280 nm and 253 nm for EUV irradiated samples. Detailed AFM studies confirmed the presence of 1.8 mm wide period U-shaped channels in EUV exposed PET samples. The walls of the channels were having FWHM of about 0.4 mm. The channels were created due to translatory movements of the sample in horizontal and transverse directions during the EUV exposure. The increased surface roughness is useful for many applications. The nanoscale channels fabricated by EUV exposure could be interesting for microfluidic applications based on lab-on-a-chip (LOC) devices.

EUV mask pilot line at Intel Corporation

NASA Astrophysics Data System (ADS)

Stivers, Alan R.; Yan, Pei-Yang; Zhang, Guojing; Liang, Ted; Shu, Emily Y.; Tejnil, Edita; Lieberman, Barry; Nagpal, Rajesh; Hsia, Kangmin; Penn, Michael; Lo, Fu-Chang

2004-12-01

The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intel's strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.

EUVE GO Survey: High Levels of User Satisfaction

NASA Astrophysics Data System (ADS)

Stroozas, B. A.

2000-12-01

This paper describes the results of a detailed customer survey of Guest Observers (GOs) for NASA's Extreme Ultraviolet Explorer (EUVE) astronomy satellite observatory. The purpose of the research survey was to (1) measure the levels of GO customer satisfaction with respect to EUVE observing services, and (2) compare the observing experiences of EUVE GOs with their experiences using other satellite observatories. This survey was conducted as a business research project -- part of the author's graduate work as an MBA candidate. A total sample of 38 respondents, from a working population of 101 "active" EUVE GOs, participated in this survey. The results, which provided a profile of the "typical" EUVE GO, showed in a statistically significant fashion that these GOs were more than satisfied with the available EUVE observing services. In fact, the sample GOs generally rated their EUVE observing experiences to be better than average as compared to their experiences as GOs on other missions. These relatively high satisfaction results are particularly pleasing to the EUVE Project which, given its significantly reduced staffing environment at U.C. Berkeley, has continued to do more with less. This paper outlines the overall survey process: the relevant background and previous research, the survey design and methodology, and the final results and their interpretation. The paper also points out some general limitations and weaknesses of the study, along with some recommended actions for the EUVE Project and for NASA in general. This work was funded by NASA/UCB Cooperative Agreement NCC5-138.

Temporal variations of solar EUV, UV, and 10,830-A radiations

NASA Technical Reports Server (NTRS)

Donnelly, R. F.; Hinteregger, H. E.; Heath, D. F.

1986-01-01

The temporal characteristics of the full-disk chromospheric EUV fluxes agree well with those of the ground-based measurements of the chromospheric He I absorption line at 10,830 A and differ systematically from those of the coronal EUV and 10.7-cm flux. The ratio of the flux increase during the rise of solar cycle 21 to that during solar rotation variations is uniformly high for the chromospheric EUV and corroborating 10,830-A fluxes, highest for the transition region and 'cool' coronal EUV fluxes (T less than 2 x 10 to the 6th K), and lowest for the 'hot' coronal EUV and 10.7-cm flux. The rise and decay rates of episodes of major activity progress from those for the hot coronal EUV lines and the 10.7-cm flux to slower values for the chromospheric H Lyman alpha line, 10,830-A line, and photospheric 2050-A UV flux. It is suggested that active region remnants contribute significantly to the solar cycle increase and during the decay of episodes of major activity. The ratio of power in 13-day periodicity to that for 27 days in high (1/3) for the photospheric UV flux, medium (1/6) for the chromospheric EUV and 10,830-A fluxes, and small to negligible for the hot coronal EUV fluxes. These ratios are used to estimate the dependence of active region emission on the solar central meridian distance for chromospheric and coronal EUV flux.

Fundamentals of EUV resist-inorganic hardmask interactions

NASA Astrophysics Data System (ADS)

Goldfarb, Dario L.; Glodde, Martin; De Silva, Anuja; Sheshadri, Indira; Felix, Nelson M.; Lionti, Krystelle; Magbitang, Teddie

2017-03-01

High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardmasks (HMs) as etch transfer layers for EUV patterning. Ultrathin (<5nm) inorganic HMs can provide higher etch selectivity, lower post-etch LWR, decreased defectivity and wet strippability compared to spin-on hybrid HMs (e.g., SiARC), however such novel layers can induce resist adhesion failure and resist residue. Therefore, a fundamental understanding of EUV resist-inorganic HM interactions is needed in order to optimize the EUV resist interfacial behavior. In this paper, novel materials and processing techniques are introduced to characterize and improve the EUV resist-inorganic HM interface. HM surface interactions with specific EUV resist components are evaluated for open-source experimental resist formulations dissected into its individual additives using EUV contrast curves as an effective characterization method to determine post-development residue formation. Separately, an alternative adhesion promoter platform specifically tailored for a selected ultrathin inorganic HM based on amorphous silicon (aSi) is presented and the mitigation of resist delamination is exemplified for the cases of positive-tone and negative-tone development (PTD, NTD). Additionally, original wafer priming hardware for the deposition of such novel adhesion promoters is unveiled. The lessons learned in this work can be directly applied to the engineering of EUV resist materials and processes specifically designed to work on such novel HMs.

Extreme ultraviolet (EUV) solar spectral irradiance (SSI) for ionospheric application - history and contemporary state-of-art

NASA Astrophysics Data System (ADS)

Schmidtke, G.; Jacobi, Ch.; Nikutowski, B.; Erhardt, Ch.

2014-11-01

After a historical survey of space related EUV measurements in Germany and the role of Karl Rawer in pursuing this work, we describe present developments in EUV spectroscopy and provide a brief outlook on future activities. The group of Karl Rawer has performed the first scientific space project in Western Europe on 19th October 1954. Then it was decided to include the field of solar EUV spectroscopy in ionospheric investigations. Starting in 1957 an intensified development of instrumentation was going on to explore solar EUV radiation, atmospheric airglow and auroral emissions until the institute had to stop space activities in the early nineteen-eighties. EUV spectroscopy was continued outside of the institute during eight years. This area of work was supported again by the institute developing the Auto-Calibrating Spectrometers (SolACES) for a mission on the International Space Station (ISS). After more than six years in space the instrument is still in operation. Meanwhile the work on the primary task also to validate EUV data available from other space missions has made good progress. The first results of validating those data and combine them into one set of EUV solar spectral irradiance are very promising. It will be recommended for using it by the science and application community. Moreover, a new low-cost type of an EUV spectrometer is presented for monitoring the solar EUV radiation. It shall be further developed for providing EUV-TEC data to be applied in ionospheric models replacing the Covington index F10.7. Applying these data for example in the GNSS signal evaluation a more accurate determination of GNSS receiver positions is expected for correcting the propagation delays of navigation signals traveling through the ionosphere from space to earth. - Latest results in the field of solar EUV spectroscopy are discussed, too.

Design and progress in the fabrication of an EUV micro exposure tool optics for PREUVE

NASA Astrophysics Data System (ADS)

Geyl, Roland; Tanne, Jean-Francois

2001-12-01

SAGEM, through its REOSC product line, is participating since November 1999 to PREUVE, the French EUV initiative, and work within this program especially in the field of EUV illumination and projection optics. After a short description of the PREUVE main lines of activity, we will detail our contributions to this program and work progress. This is mainly focused on basic EUV optics fabrication technology in order to ensure the fabrication of the entire optics assembly of an EUV micro exposure tool.

Laser scanning system for object monitoring

DOEpatents

McIntyre, Timothy James [Knoxville, TN; Maxey, Lonnie Curtis [Powell, TN; Chiaro, Jr; John, Peter [Clinton, TN

2008-04-22

A laser scanner is located in a fixed position to have line-of-sight access to key features of monitored objects. The scanner rapidly scans pre-programmed points corresponding to the positions of retroreflecting targets affixed to the key features of the objects. The scanner is capable of making highly detailed scans of any portion of the field of view, permitting the exact location and identity of targets to be confirmed. The security of an object is verified by determining that the cooperative target is still present and that its position has not changed. The retroreflecting targets also modulate the reflected light for purposes of returning additional information back to the location of the scanner.

[Evaluation of the quality of three-dimensional data acquired by using two kinds of structure light intra-oral scanner to scan the crown preparation model].

PubMed

Zhang, X Y; Li, H; Zhao, Y J; Wang, Y; Sun, Y C

2016-07-01

To quantitatively evaluate the quality and accuracy of three-dimensional (3D) data acquired by using two kinds of structure intra-oral scanner to scan the typical teeth crown preparations. Eight typical teeth crown preparations model were scanned 3 times with two kinds of structured light intra-oral scanner(A, B), as test group. A high precision model scanner were used to scan the model as true value group. The data above the cervical margin was extracted. The indexes of quality including non-manifold edges, the self-intersections, highly-creased edges, spikes, small components, small tunnels, small holes and the anount of triangles were measured with the tool of mesh doctor in Geomagic studio 2012. The scanned data of test group were aligned to the data of true value group. 3D deviations of the test group compared with true value group were measured for each scanned point, each preparation and each group. Independent-samples Mann-Whitney U test was applied to analyze 3D deviations for each scanned point of A and B group. Correlation analysis was applied to index values and 3D deviation values. The total number of spikes in A group was 96, and that in B group and true value group were 5 and 0 respectively. Trueness: A group 8.0 (8.3) μm, B group 9.5 (11.5) μm(P>0.05). Correlation analysis of the number of spikes with data precision of A group was r=0.46. In the study, the qulity of the scanner B is better than scanner A, the difference of accuracy is not statistically significant. There is correlation between quality and data precision of the data scanned with scanner A.

Optimization of the occulter for the Solar Orbiter/METIS coronagraph

NASA Astrophysics Data System (ADS)

Landini, Federico; Vivès, Sébastien; Romoli, Marco; Guillon, Christophe; Pancrazzi, Maurizio; Escolle, Clement; Focardi, Mauro; Antonucci, Ester; Fineschi, Silvano; Naletto, Giampiero; Nicolini, Gianalfredo; Nicolosi, Piergiorgio; Spadaro, Daniele

2012-09-01

METIS (Multi Element Telescope for Imaging and Spectroscopy investigation), selected to fly aboard the Solar Orbiter ESA/NASA mission, is conceived to perform imaging (in visible, UV and EUV) and spectroscopy (in EUV) of the solar corona, by means of an integrated instrument suite located on a single optical bench and sharing the same aperture on the satellite heat shield. As every coronagraph, METIS is highly demanding in terms of stray light suppression. Coronagraphs history teaches that a particular attention must be dedicated to the occulter optimization. The METIS occulting system is of particular interest due to its innovative concept. In order to meet the strict thermal requirements of Solar Orbiter, METIS optical design has been optimized by moving the entrance pupil at the level of the external occulter on the S/C thermal shield, thus reducing the size of the external aperture. The scheme is based on an inverted external-occulter (IEO). The IEO consists of a circular aperture on the Solar Orbiter thermal shield. A spherical mirror rejects back the disk-light through the IEO. A breadboard of the occulting assembly (BOA) has been manufactured in order to perform stray light tests in front of two solar simulators (in Marseille, France and in Torino, Italy). A first measurement campaign has been carried on at the Laboratoire d'Astrophysique de Marseille. In this paper we describe the BOA design, the laboratory set-up and the preliminary results.

Status of EUVL mask development in Europe (Invited Paper)

NASA Astrophysics Data System (ADS)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

EUV laser produced and induced plasmas for nanolithography

NASA Astrophysics Data System (ADS)

Sizyuk, Tatyana; Hassanein, Ahmed

2017-10-01

EUV produced plasma sources are being extensively studied for the development of new technology for computer chips production. Challenging tasks include optimization of EUV source efficiency, producing powerful source in 2 percentage bandwidth around 13.5 nm for high volume manufacture (HVM), and increasing the lifetime of collecting optics. Mass-limited targets, such as small droplet, allow to reduce contamination of chamber environment and mirror surface damage. However, reducing droplet size limits EUV power output. Our analysis showed the requirement for the target parameters and chamber conditions to achieve 500 W EUV output for HVM. The HEIGHTS package was used for the simulations of laser produced plasma evolution starting from laser interaction with solid target, development and expansion of vapor/plasma plume with accurate optical data calculation, especially in narrow EUV region. Detailed 3D modeling of mix environment including evolution and interplay of plasma produced by lasers from Sn target and plasma produced by in-band and out-of-band EUV radiation in ambient gas, used for the collecting optics protection and cleaning, allowed predicting conditions in entire LPP system. Effect of these conditions on EUV photon absorption and collection was analyzed. This work is supported by the National Science Foundation, PIRE project.

Extreme ultraviolet spectroscopy diagnostics of low-temperature plasmas based on a sliced multilayer grating and glass capillary optics.

PubMed

Kantsyrev, V L; Safronova, A S; Williamson, K M; Wilcox, P; Ouart, N D; Yilmaz, M F; Struve, K W; Voronov, D L; Feshchenko, R M; Artyukov, I A; Vinogradov, A V

2008-10-01

New extreme ultraviolet (EUV) spectroscopic diagnostics of relatively low-temperature plasmas based on the application of an EUV spectrometer and fast EUV diodes combined with glass capillary optics is described. An advanced high resolution dispersive element sliced multilayer grating was used in the compact EUV spectrometer. For monitoring of the time history of radiation, filtered fast EUV diodes were used in the same spectral region (>13 nm) as the EUV spectrometer. The radiation from the plasma was captured by using a single inexpensive glass capillary that was transported onto the spectrometer entrance slit and EUV diode. The use of glass capillary optics allowed placement of the spectrometer and diodes behind the thick radiation shield outside the direction of a possible hard x-ray radiation beam and debris from the plasma source. The results of the testing and application of this diagnostic for a compact laser plasma source are presented. Examples of modeling with parameters of plasmas are discussed.

Mechanisms of EUV exposure: electrons and holes

NASA Astrophysics Data System (ADS)

Narasimhan, Amrit; Grzeskowiak, Steven; Ackerman, Christian; Flynn, Tracy; Denbeaux, Greg; Brainard, Robert L.

2017-03-01

In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists. Current EUV photoresists are composed of photoacid generators (PAGs) in polymer matrices. Secondary electrons (2 - 80 eV) created in resists during EUV exposure play large role in acid-production. There are several proposed mechanisms for electron-resist interactions: internal excitation, electron trapping, and hole-initiated chemistry. Here, we will address two central questions in EUV resist research: (1) How many electrons are generated per EUV photon absorption? (2) By which mechanisms do these electrons interact and react with molecules in the resist? We will use this framework to evaluate the contributions of electron trapping and hole initiated chemistry to acid production in chemically amplified photoresists, with specific emphasis on the interdependence of these mechanisms. We will show measurements of acid yield from direct bulk electrolysis of PAGs and EUV exposures of PAGs in phenolic and nonphenolic polymers to narrow down the mechanistic possibilities in chemically amplified resists.

Solar EUV irradiance for space weather applications

NASA Astrophysics Data System (ADS)

Viereck, R. A.

2015-12-01

Solar EUV irradiance is an important driver of space weather models. Large changes in EUV and x-ray irradiances create large variability in the ionosphere and thermosphere. Proxies such as the F10.7 cm radio flux, have provided reasonable estimates of the EUV flux but as the space weather models become more accurate and the demands of the customers become more stringent, proxies are no longer adequate. Furthermore, proxies are often provided only on a daily basis and shorter time scales are becoming important. Also, there is a growing need for multi-day forecasts of solar EUV irradiance to drive space weather forecast models. In this presentation we will describe the needs and requirements for solar EUV irradiance information from the space weather modeler's perspective. We will then translate these requirements into solar observational requirements such as spectral resolution and irradiance accuracy. We will also describe the activities at NOAA to provide long-term solar EUV irradiance observations and derived products that are needed for real-time space weather modeling.

First environmental data from the EUV engineering test stand

NASA Astrophysics Data System (ADS)

Klebanoff, Leonard E.; Malinowski, Michael E.; Grunow, Philip A.; Clift, W. Miles; Steinhaus, Chip; Leung, Alvin H.; Haney, Steven J.

2001-08-01

The first environmental data from the Engineering Test Stand (ETS) has been collected. Excellent control of high-mass hydrocarbons has been observed. This control is a result of extensive outgas testing of components and materials, vacuum compatible design of the ETS, careful cleaning of parts and pre-baking of cables and sub assemblies where possible, and clean assembly procedures. As a result of the hydrocarbon control, the residual ETS vacuum environment is rich in water vapor. Analysis of witness plate data indicates that the ETS environment does not pose a contamination risk to the optics in the absence of EUV irradiation. However, with EUV exposure, the water rich environment can lead to EUV- induced water oxidation of the Si-terminated Mo/Si optics. Added ethanol can prevent optic oxidation, allowing carbon growth via EUV cracking of low-level residual hydrocarbons to occur. The EUV environmental issues are understood, mitigation approaches have been validated, and EUV optic contamination appears to be manageable.

Design and pitch scaling for affordable node transition and EUV insertion scenario

NASA Astrophysics Data System (ADS)

Kim, Ryoung-han; Ryckaert, Julien; Raghavan, Praveen; Sherazi, Yasser; Debacker, Peter; Trivkovic, Darko; Gillijns, Werner; Tan, Ling Ee; Drissi, Youssef; Blanco, Victor; Bekaert, Joost; Mao, Ming; Larivière, Stephane; McIntyre, Greg

2017-04-01

imec's DTCO and EUV achievement toward imec 7nm (iN7) technology node which is industry 5nm node equivalent is reported with a focus on cost and scaling. Patterning-aware design methodology supports both iArF multiple patterning and EUV under one compliant design rule. FinFET device with contacted poly pitch of 42nm and metal pitch of 32nm with 7.5-track, 6.5-track, and 6-track standard cell library are explored. Scaling boosters are used to provide additional scaling and die cost benefit while lessening pitch shrink burden, and it makes EUV insertion more affordable. EUV pattern fidelity is optimized through OPC, SMO, M3D, mask sizing and SRAF. Processed wafers were characterized and edge-placement-error (EPE) variability is validated for EUV insertion. Scale-ability and cost of ownership of EUV patterning in aligned with iN7 standard cell design, integration and patterning specification are discussed.

Free-space wavelength-multiplexed optical scanner.

PubMed

Yaqoob, Z; Rizvi, A A; Riza, N A

2001-12-10

A wavelength-multiplexed optical scanning scheme is proposed for deflecting a free-space optical beam by selection of the wavelength of the light incident on a wavelength-dispersive optical element. With fast tunable lasers or optical filters, this scanner features microsecond domain scan setting speeds and large- diameter apertures of several centimeters or more for subdegree angular scans. Analysis performed indicates an optimum scan range for a given diffraction order and grating period. Limitations include beam-spreading effects based on the varying scanner aperture sizes and the instantaneous information bandwidth of the data-carrying laser beam.

20. View from northeast to southwest side of scanner building ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

20. View from northeast to southwest side of scanner building 104 showing two waveguide termination faces (fiberglass light bands on left of photograph). - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

Prototype active scanner for nighttime oil spill mapping and classification

NASA Technical Reports Server (NTRS)

Sandness, G. A.; Ailes, S. B.

1977-01-01

A prototype, active, aerial scanner system was constructed for nighttime water pollution detection and nighttime multispectral imaging of the ground. An arc lamp was used to produce the transmitted light and four detector channels provided a multispectral measurement capability. The feasibility of the design concept was demonstrated by laboratory and flight tests of the prototype system.

EUV-induced oxidation of carbon on TiO2.

PubMed

Faradzhev, Nadir S; Hill, Shannon B

2016-10-01

Previously we reported estimates of the maximum etch rates of C on TiO 2 by oxidizers including NO, O 3 and H 2 O 2 when irradiated by a spatially-non-uniform beam of extreme ultraviolet (EUV) radiation at 13.5 nm (Faradzhev et al., 2013). Here we extend that work by presenting temporally and spatially resolved measurements of the C etching by these oxidizers as a function of EUV intensity in the range (0.3 to 3) mW/mm 2 [(0.2 to 2) × 10 16 photons s -1 cm -2 ]. We find that the rates for NO scale linearly with intensity and are smaller than those for O 3 , which exhibit a weak, sub-linear intensity dependence in this range. We demonstrate that these behaviors are consistent with adsorption of the oxidizing precursor on the C surface followed by a photon-stimulated reaction resulting in volatile C-containing products. The kinetics of photon-induced C etching by hydrogen peroxide, however, appear to be more complex. The spatially resolved measurements reveal that C removal by H 2 O 2 begins at the edges of the C spot, where the light intensity is the lowest, and proceeds toward the center of the spot. This localization of the reaction may occur because hydroxyl radicals are produced efficiently on the catalytically active TiO 2 surface.

Structural properties of Al/Mo/SiC multilayers with high reflectivity for extreme ultraviolet light.

PubMed

Hu, Min-Hui; Le Guen, Karine; André, Jean-Michel; Jonnard, Philippe; Meltchakov, Evgueni; Delmotte, Franck; Galtayries, Anouk

2010-09-13

We present the results of an optical and chemical, depth and surface study of Al/Mo/SiC periodic multilayers, designed as high reflectivity coatings for the extreme ultra-violet (EUV) range. In comparison to the previously studied Al/SiC system, the introduction of Mo as a third material in the multilayer structure allows us to decrease In comparison to the previously studied Al/SiC system with a reflectance of 37% at near normal incidence around 17 nm, the introduction of Mo as a third material in the multilayer structure allows us to decrease the interfacial roughness and achieve an EUV reflectivity of 53.4%, measured with synchrotron radiation. This is the first report of a reflectivity higher than 50% around 17 nm. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and x-ray photoelectron spectroscopy (XPS) measurements are performed on the Al/Mo/SiC system in order to analyze the individual layers within the stack. ToF-SIMS and XPS results give evidence that the first SiC layer is partially oxidized, but the O atoms do not reach the first Mo and Al layers. We use these results to properly describe the multilayer stack and discuss the possible reasons for the difference between the measured and simulated EUV reflectivity values.

INFRARED STUDY OF UV/EUV IRRADIATION OF NAPHTHALENE IN H2O+NH3 ICE

NASA Astrophysics Data System (ADS)

Chen, Y.-J.; Nuevo, M.; Yeh, F.-C.; Yih, T.-S.; Sun, W.-H.; Ip, W.-H.; Fung, H.-S.; Lee, Y.-Y.; Wu, C.-Y. R.

We have carried out photon irradiation study of naphthalene (C10H8), the smallest polycyclic aromatic hydrocarbon (PAH) in water and ammonia ice mixtures. Photons provided by a synchrotron radiation light source in two broad-band energy ranges in the ultraviolet/near extreme ultraviolet (4-20 eV) and the extreme ultraviolet (13-45 eV) ranges were used for the irradiation of H2O+NH3+C10H8 = 1:1:1 ice mixtures at 15K. We could identify several photo-products, namely CH4, C2H6, C3H8, CO, CO2, HNCO, OCN-, and probably quinoline (C9H7N) and phenanthridine (C13H9N). We found that the light hydrocarbons are preferably produced for the ice mixture subjected to 4-20 eV photons. However, the production yields of CO, CO2, and OCN- species seem to be higher for the mixture subjected to EUV photons (13-45 eV). Therefore, naphthalene and its photo-products appear to be more efficiently destroyed when high energy photons (E > 20 eV) are used. This has important consequences on the photochemical evolution of PAHs in astrophysical environments.

CXRO - Mi-Young Im, Staff Scientist

Science.gov Websites

X-Ray Database Zone Plate Education Nanomagnetism X-Ray Microscopy LDJIM EUV Lithography EUV Mask Publications Contact The Center for X-Ray Optics is a multi-disciplined research group within Lawrence Berkeley -Ray Optics X-Ray Database Nanomagnetism X-Ray Microscopy EUV Lithography EUV Mask Imaging

Discovery of Strong EUV-induced Balmer Emission in the New WD+dM Binary EUVE J2013+40.0 (RE 2013+400)

NASA Astrophysics Data System (ADS)

Thorstensen, J. R.; Vennes, S.

1993-12-01

The binary system EUVE J2013+40.0 (= RE 2013+400) was discovered in the EUV-selected sample of white dwarfs identified in the course of the ROSAT Wide Field Camera (WFC) all-sky survey (Pounds et al. 1993, MNRAS, 260, 77). The intense extreme ultraviolet (EUV) emission from the hot white dwarf (DAO type) was also detected in the course of the Extreme Ultraviolet Explorer (EUVE) all-sky survey (Bowyer et al. 1993, ApJ, submitted), and the subsequent optical identification campaign suggested the association of EUVE J2013+40.0 with the Feige 24 class of binary systems (see Vennes & Thorstensen, these proceedings). Such systems consist of a hot H-rich white dwarf (DA/DAO) and a red dwarf companion (dM) and are characterized by strong, narrow, variable Balmer emission. We obtained spectroscopy with 4 Angstroms resolution at the Michigan-Dartmouth-MIT Hiltner 2.4 m, covering the Hα and Hβ range. The Hα emission line velocity and equivalent widths varied with a period of 0.708 +/- 0.003 d; the velocity semiamplitude is 89 +/- 3 km s(-1) . The emission equivalent width reaches maximum strength 0.251 +/- 0.007 cycle after maximum emission-line velocity, that is, when the emission source reaches superior conjunction. This is just as expected if the emission arises from reprocessing of the EUV radiation incident upon the face of the dM star facing the white dwarf, as proposed for Feige 24 by Thorstensen et al. (1978, ApJ, 223, 260). EUVE J2013+40.0 is one of a handful of WD+dM binary systems in which the illumination effect is observed with unambiguous clarity. By comparing Feige 24 and EUVE J2013+40.0, and modelling the white dwarf EUV emission and red dwarf Balmer emission, we constrain the orbital inclinations. Additional spectroscopy of EUVE J2013+40.0 is being scheduled to determine the component masses. These are important input data for the study of the close binary systems which arise from common envelope evolution. This work is supported by a forthcoming NASA Guest Observer grant.

EUV mask manufacturing readiness in the merchant mask industry

NASA Astrophysics Data System (ADS)

Green, Michael; Choi, Yohan; Ham, Young; Kamberian, Henry; Progler, Chris; Tseng, Shih-En; Chiou, Tsann-Bim; Miyazaki, Junji; Lammers, Ad; Chen, Alek

2017-10-01

As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process "stress testing" to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for the broadest community possible as the technology is implemented first within and then beyond the initial early adopters.

Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons

NASA Astrophysics Data System (ADS)

Kyser, David F.; Eib, Nicholas K.; Ritchie, Nicholas W. M.

2016-07-01

The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to calculate the energy density as a function of the incident aerial flux (EUV: mJ/cm2, EB: μC/cm2). Monte Carlo calculations for electron exposure are utilized, and a Lambert-Beer model for EUV absorption. The ratio of electron flux to photon flux which results in equivalent energy density is calculated for a typical organic chemically amplified resist film and a typical inorganic metal-oxide film. This ratio can be used to screen EUV resist materials with EB measurements and accelerate advances in EUV resist systems.

EUVS Sounding Rocket Payload

NASA Technical Reports Server (NTRS)

Stern, Alan S.

1996-01-01

During the first half of this year (CY 1996), the EUVS project began preparations of the EUVS payload for the upcoming NASA sounding rocket flight 36.148CL, slated for launch on July 26, 1996 to observe and record a high-resolution (approx. 2 A FWHM) EUV spectrum of the planet Venus. These preparations were designed to improve the spectral resolution and sensitivity performance of the EUVS payload as well as prepare the payload for this upcoming mission. The following is a list of the EUVS project activities that have taken place since the beginning of this CY: (1) Applied a fresh, new SiC optical coating to our existing 2400 groove/mm grating to boost its reflectivity; (2) modified the Ranicon science detector to boost its detective quantum efficiency with the addition of a repeller grid; (3) constructed a new entrance slit plane to achieve 2 A FWHM spectral resolution; (4) prepared and held the Payload Initiation Conference (PIC) with the assigned NASA support team from Wallops Island for the upcoming 36.148CL flight (PIC held on March 8, 1996; see Attachment A); (5) began wavelength calibration activities of EUVS in the laboratory; (6) made arrangements for travel to WSMR to begin integration activities in preparation for the July 1996 launch; (7) paper detailing our previous EUVS Venus mission (NASA flight 36.117CL) published in Icarus (see Attachment B); and (8) continued data analysis of the previous EUVS mission 36.137CL (Spica occultation flight).

Laser technologies for ultrasensitive groundwater dating using long-lived isotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling

In this phase I work, we propose to construct and demonstrate a 103 nm laser based on resonantly enhanced and phase matched fifth harmonic generation in hollow waveguides driven by a high power, low cost and compact ultrafast fiber laser. (Figure 4) This VUV laser source can potentially produce >100 milliwatts of VUV light at 103 nm with pulse repetition-rates of 100 kHz to 100 MHz, ideal for the above-mentioned applications. This technology is state-of-the-art and potentially compact, fieldable, low-cost, and of broad interest for a variety of science and technology applications. Laser-based VUV sources in the past have exhibitedmore » low repetition rate, low efficiency, low beam quality, and are based on expensive laser sources. Our approch is to combine ultrafast fiber laser drive technology, ultrafast pulses, and our proven waveguide technology, to create a high repetition rate, high average power VUV source for producing high yield metastable Krypton. At KMLabs we have been offering EUV light sources employing the high harmonic generation (HHG) process driven by high-power femtosecond lasers for >5 years now. Recently, we have developed much smaller scale (briefcase size), but still high average power femtosecond fiber laser sources to supply other markets, and create new ones. By combining these new laser sources with our patented waveguide frequency upconversion technology, we expect to be able to obtain >20mW average power initially, with potentially much higher powers depending on wavelength, in an affordable VUV product. For comparison, our current EUV light sources based on ti:sapphire generate an average power of ~5 µW (albeit at shorter 29 nm wavelength), and we are aware of one other supplier that has developed a VUV (112 nm) light source with ~10-20 µW power.« less

Extreme Ultraviolet Explorer Bright Source List

NASA Technical Reports Server (NTRS)

Malina, Roger F.; Marshall, Herman L.; Antia, Behram; Christian, Carol A.; Dobson, Carl A.; Finley, David S.; Fruscione, Antonella; Girouard, Forrest R.; Hawkins, Isabel; Jelinsky, Patrick

1994-01-01

Initial results from the analysis of the Extreme Ultraviolet Explorer (EUVE) all-sky survey (58-740 A) and deep survey (67-364 A) are presented through the EUVE Bright Source List (BSL). The BSL contains 356 confirmed extreme ultraviolet (EUV) point sources with supporting information, including positions, observed EUV count rates, and the identification of possible optical counterparts. One-hundred twenty-six sources have been detected longward of 200 A.

How active was solar cycle 22?

NASA Technical Reports Server (NTRS)

Hoegy, W. R.; Pesnell, W. D.; Woods, T. N.; Rottman, G. J.

1993-01-01

Solar EUV observations from the Langmuir probe on Pioneer Venus Orbiter suggest that at EUV wavelengths solar cycle 22 was more active than solar cycle 21. The Langmuir probe, acting as a photodiode, measured the integrated solar EUV flux over a 13 1/2 year period from January 1979 to June 1992, the longest continuous solar EUV measurement. The Ipe EUV flux correlated very well with the SME measurement of L-alpha during the lifetime of SME and with the UARS SOLSTICE L-alpha from October 1991 to June 1992 when the Ipe measurement ceased. Starting with the peak of solar cycle 21, there was good general agreement of Ipe EUV with the 10.7 cm, Ca K, and He 10830 solar indices, until the onset of solar cycle 22. From 1989 to the start of 1992, the 10.7 cm flux exhibited a broad maximum consisting of two peaks of nearly equal magnitude, whereas Ipe EUV exhibited a strong increase during this time period making the second peak significantly higher than the first. The only solar index that exhibits the same increase in solar activity as Ipe EUV and L-alpha during the cycle 22 peak is the total magnetic flux. The case for high activity during this peak is also supported by the presence of very high solar flare intensity.

Low temperature plasmas induced in SF6 by extreme ultraviolet (EUV) pulses

NASA Astrophysics Data System (ADS)

Bartnik, A.; Skrzeczanowski, W.; Czwartos, J.; Kostecki, J.; Fiedorowicz, H.; Wachulak, P.; Fok, T.

2018-06-01

In this work, a comparative study of extreme ultraviolet (EUV) induced low temperature SF6-based plasmas, created using two different irradiation systems, was performed. Both systems utilized laser-produced plasma (LPP) EUV sources. The essential difference between the systems concerned the formation of the driving EUV beam. The first one contained an efficient ellipsoidal EUV collector allowing for focusing of the EUV radiation at a large distance from the LPP source. The spectrum of focused radiation was limited to the long-wavelength part of the total LPP emission, λ > 8 nm, due to the reflective properties of the collector. The second system did not contain any EUV collector. The gas to be ionized was injected in the vicinity of the LPP, at a distance of the order of 10 mm. In both systems, energies of the driving photons were high enough for dissociative ionization of the SF6 molecules and ionization of atoms or even singly charged ions. Plasmas, created due to these processes, were investigated by spectral measurements in the EUV, ultraviolet (UV), and visible (VIS) spectral ranges. These low temperature plasmas were employed for preliminary experiments concerning surface treatment. The formation of pronounced nanostructures on the silicon surface after plasma treatment was demonstrated.

Influence of cloud fraction and snow cover to the variation of surface UV radiation at King Sejong station, Antarctica

NASA Astrophysics Data System (ADS)

Lee, Yun Gon; Koo, Ja-Ho; Kim, Jhoon

2015-10-01

This study investigated how cloud fraction and snow cover affect the variation of surface ultraviolet (UV) radiation by using surface Erythemal UV (EUV) and Near UV (NUV) observed at the King Sejong Station, Antarctica. First the Radiative Amplification Factor (RAF), the relative change of surface EUV according to the total-column ozone amount, is compared for different cloud fractions and solar zenith angles (SZAs). Generally, all cloudy conditions show that the increase of RAF as SZA becomes larger, showing the larger effects of vertical columnar ozone. For given SZA cases, the EUV transmission through mean cloud layer gradually decreases as cloud fraction increases, but sometimes the maximum of surface EUV appears under partly cloudy conditions. The high surface EUV transmittance under broken cloud conditions seems due to the re-radiation of scattered EUV by cloud particles. NUV transmission through mean cloud layer also decreases as cloud amount increases but the sensitivity to the cloud fraction is larger than EUV. Both EUV and NUV radiations at the surface are also enhanced by the snow cover, and their enhancement becomes higher as SZA increases implying the diurnal variation of surface albedo. This effect of snow cover seems large under the overcast sky because of the stronger interaction between snow surface and cloudy sky.

Imaging performance improvement of coherent extreme-ultraviolet scatterometry microscope with high-harmonic-generation extreme-ultraviolet source

NASA Astrophysics Data System (ADS)

Mamezaki, Daiki; Harada, Tetsuo; Nagata, Yutaka; Watanabe, Takeo

2017-06-01

In extreme-ultraviolet (EUV) lithography, the development of a review apparatus for the EUV mask pattern at an exposure wavelength of 13.5 nm is required. The EUV mask is composed of an absorber pattern and a Mo/Si multilayer on a glass substrate. This mask pattern has a three-dimensional (3D) structure. The 3D structure would modulate the EUV reflection phase, which would cause focus and pattern shifts. Thus, the review of the EUV phase image is also important. We have developed a coherent EUV scatterometry microscope (CSM), which is a simple microscope without objective optics. The EUV phase and intensity images were reconstructed with diffraction images by ptychography. For a standalone mask review, the high-harmonic-generation (HHG) EUV source was employed. In this study, we updated the sample stage, pump-laser reduction system, and gas-pressure control system to reconstruct the image. As a result, an 88 nm line-and-space pattern and a cross-line pattern were reconstructed. In addition, a particle defect of 2 µm diameter was well reconstructed. This demonstrated the high capability of the standalone CSM, which can hence be used in factories, such as mask shops and semiconductor fabrication plants.

A volume-limited survey of High Galactic latitude planetary nebulae with the Extrme Ultraviolet Explorer

NASA Technical Reports Server (NTRS)

Fruscione, Antonella; Drake, Jeremy J.; Mcdonald, Kelley; Malina, Roger F.

1995-01-01

We present the results of a complete survey, at extreme-ultraviolet (EUV) wavelengths (58-234 A), of the high Galactic latitude (absolute value of b greater than or = to 20 deg) planetary nebulae (PNs) with at least one determination of the distance within 1 kpc of the Sun. The sample comprises 27 objects observed during the Extreme Ultraviolet Explorer (EUVE) all-sky survey and represents the majority of PN likely to be accessible at EUV wavelengths. Six PNs (NGC 246, NGC 1360, K1-16, LoTr 5, NGC 4361, and NGC 3587) were detected in the shortest EUV band (58-174 A). A seventh PN (NGC 6853), not included in the sample, was also detected during the survey. The emission is consistent in all cases with that of a point source and therefore most probably originates from the PN central star. Accurate EUV count rates or upper limits in the two shorter EUVE bands (centered at approximately 100 and 200 A) are given for all the sources in the sample. NGC 4361 and NGC 3587 are reported here for the first time as sources of EUV radiation. As might be expected, attenuation by the interstellar medium dominates the PN distribution in the EUV sky.

Analysis of a Failed Eclipse Plasma Ejection Using EUV Observations

NASA Astrophysics Data System (ADS)

Tavabi, E.; Koutchmy, S.; Bazin, C.

2018-03-01

The photometry of eclipse white-light (W-L) images showing a moving blob is interpreted for the first time together with observations from space with the PRoject for On Board Autonomy (PROBA-2) mission (ESA). An off-limb event seen with great details in W-L was analyzed with the SWAP imager ( Sun Watcher using Active pixel system detector and image Processing) working in the EUV near 174 Å. It is an elongated plasma blob structure of 25 Mm diameter moving above the east limb with coronal loops under. Summed and co-aligned SWAP images are evaluated using a 20-h sequence, in addition to the 11 July, 2010 eclipse W-L images taken from several sites. The Atmospheric Imaging Assembly (AIA) instrument on board the Solar Dynamics Observatory (SDO) recorded the event suggesting a magnetic reconnection near a high neutral point; accordingly, we also call it a magnetic plasmoid. The measured proper motion of the blob shows a velocity up to 12 km s^{-1}. Electron densities of the isolated condensation (cloud or blob or plasmoid) are photometrically evaluated. The typical value is 108 cm^{-3} at r=1.7 R_{⊙}, superposed on a background corona of 107 cm^{-3} density. The mass of the cloud near its maximum brightness is found to be 1.6×10^{13} g, which is typically 0.6×10^{-4} of the overall mass of the corona. From the extrapolated magnetic field the cloud evolves inside a rather broad open region but decelerates, after reaching its maximum brightness. The influence of such small events for supplying material to the ubiquitous slow wind is noticed. A precise evaluation of the EUV photometric data, after accurately removing the stray light, suggests an interpretation of the weak 174 Å radiation of the cloud as due to resonance scattering in the Fe IX/X lines.

SU-E-I-22: A Comprehensive Investigation of Noise Variations Between the GE Discovery CT750 HD and GE LightSpeed VCT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bache, S; Loyer, E; Stauduhar, P

2015-06-15

Purpose: To quantify and compare the noise properties between two GE CT models-the Discovery CT750 HD (aka HD750) and LightSpeed VCT, with the overall goal of assessing the impact in clinical diagnostic practice. Methods: Daily QC data from a fleet of 9 CT scanners currently in clinical use were investigated – 5 HD750 and 4 VCT (over 600 total acquisitions for each scanner). A standard GE QC phantom was scanned daily using two sets of scan parameters with each scanner over 1 year. Water CT number and standard deviation were recorded from the image of water section of the QCmore » phantom. The standard GE QC scan parameters (Pitch = 0.516, 120kVp, 0.4s, 335mA, Small Body SFOV, 5mm thickness) and an in-house developed protocol (Axial, 120kVp, 1.0s, 240mA, Head SFOV, 5mm thickness) were used, with Standard reconstruction algorithm. Noise was measured as the standard deviation in the center of the water phantom image. Inter-model noise distributions and tube output in mR/mAs were compared to assess any relative differences in noise properties. Results: With the in-house protocols, average noise for the five HD750 scanners was ∼9% higher than the VCT scanners (5.8 vs 5.3). For the GE QC protocol, average noise with the HD750 scanners was ∼11% higher than with the VCT scanners (4.8 vs 4.3). This discrepancy in noise between the two models was found despite the tube output in mR/mAs being comparable with the HD750 scanners only having ∼4% lower output (8.0 vs 8.3 mR/mAs). Conclusion: Using identical scan protocols, average noise in images from the HD750 group was higher than that from the VCT group. This confirms feedback from an institutional radiologist’s feedback regarding grainier patient images from HD750 scanners. Further investigation is warranted to assess the noise texture and distribution, as well as clinical impact.« less

``Big Bang" for NASA's Buck: Nearly Three Years of EUVE Mission Operations at UCB

NASA Astrophysics Data System (ADS)

Stroozas, B. A.; Nevitt, R.; McDonald, K. E.; Cullison, J.; Malina, R. F.

1999-12-01

After over seven years in orbit, NASA's Extreme Ultraviolet Explorer (EUVE) satellite continues to perform flawlessly and with no significant loss of science capabilities. EUVE continues to produce important and exciting science results and, with reentry not expected until 2003-2004, many more such discoveries await. In the nearly three years since the outsourcing of EUVE from NASA's Goddard Space Flight Center, the small EUVE operations team at the University of California at Berkeley (UCB) has successfully conducted all aspects of the EUVE mission -- from satellite operations, science and mission planning, and data processing, delivery, and archival, to software support, systems administration, science management, and overall mission direction. This paper discusses UCB's continued focus on automation and streamlining, in all aspects of the Project, as the means to maximize EUVE's overall scientific productivity while minimizing costs. Multitasking, non-traditional work roles, and risk management have led to expanded observing capabilities while achieving significant cost reductions and maintaining the mission's historical 99 return. This work was funded under NASA Cooperative Agreement NCC5-138.

Efficient extreme-UV-to-extreme-UV conversion by four-wave mixing with intense near-IR pulses in highly charged ion plasmas

NASA Astrophysics Data System (ADS)

Chu, Hsu-hsin; Wang, Jyhpyng

2018-05-01

Nonlinear optics in the extreme-ultraviolet (EUV) has been limited by lack of transparent media and small conversion efficiency. To overcome this problem we explore the advantage of using multiply charged ion plasmas as the interacting media between EUV and intense near-infrared (NIR) pulses. Such media are transparent to EUV and can withstand intense NIR driving pulses without damage. We calculate the third-order nonlinear polarizabilities of Ar2 + and Ar3 + ions for EUV and NIR four-wave mixing by using the well-proven Cowan code and find that the EUV-to-EUV conversion efficiency as high as 26% can be expected for practical experimental configurations using multi-terawatt NIR lasers. Such a high efficiency is possible because the driving pulse intensity can be scaled up to several orders of magnitude higher than in conventional nonlinear media, and the group-velocity and phase mismatch are insignificant at the experimental plasma densities. This effective scheme of wave mixing can be utilized for ultrafast EUV waveform measurement and control as well as wavelength conversion.

Phosphor Scanner For Imaging X-Ray Diffraction

NASA Technical Reports Server (NTRS)

Carter, Daniel C.; Hecht, Diana L.; Witherow, William K.

1992-01-01

Improved optoelectronic scanning apparatus generates digitized image of x-ray image recorded in phosphor. Scanning fiber-optic probe supplies laser light stimulating luminescence in areas of phosphor exposed to x rays. Luminescence passes through probe and fiber to integrating sphere and photomultiplier. Sensitivity and resolution exceed previously available scanners. Intended for use in x-ray crystallography, medical radiography, and molecular biology.

Portable wide-field hand-held NIR scanner

NASA Astrophysics Data System (ADS)

Jung, Young-Jin; Roman, Manuela; Carrasquilla, Jennifer; Erickson, Sarah J.; Godavarty, Anuradha

2013-03-01

Near-infrared (NIR) optical imaging modality is one of the widely used medical imaging techniques for breast cancer imaging, functional brain mapping, and many other applications. However, conventional NIR imaging systems are bulky and expensive, thereby limiting their accelerated clinical translation. Herein a new compact (6 × 7 × 12 cm3), cost-effective, and wide-field NIR scanner has been developed towards contact as well as no-contact based real-time imaging in both reflectance and transmission mode. The scanner mainly consists of an NIR source light (between 700- 900 nm), an NIR sensitive CCD camera, and a custom-developed image acquisition and processing software to image an area of 12 cm2. Phantom experiments have been conducted to estimate the feasibility of diffuse optical imaging by using Indian-Ink as absorption-based contrast agents. As a result, the developed NIR system measured the light intensity change in absorption-contrasted target up to 4 cm depth under transillumination mode. Preliminary in-vivo studies demonstrated the feasibility of real-time monitoring of blood flow changes. Currently, extensive in-vivo studies are carried out using the ultra-portable NIR scanner in order to assess the potential of the imager towards breast imaging..

Lanthanum halide scintillators for time-of-flight 3-D pet

DOEpatents

Karp, Joel S [Glenside, PA; Surti, Suleman [Philadelphia, PA

2008-06-03

A Lanthanum Halide scintillator (for example LaCl.sub.3 and LaBr.sub.3) with fast decay time and good timing resolution, as well as high light output and good energy resolution, is used in the design of a PET scanner. The PET scanner includes a cavity for accepting a patient and a plurality of PET detector modules arranged in an approximately cylindrical configuration about the cavity. Each PET detector includes a Lanthanum Halide scintillator having a plurality of Lanthanum Halide crystals, a light guide, and a plurality of photomultiplier tubes arranged respectively peripherally around the cavity. The good timing resolution enables a time-of-flight (TOF) PET scanner to be developed that exhibits a reduction in noise propagation during image reconstruction and a gain in the signal-to-noise ratio. Such a PET scanner includes a time stamp circuit that records the time of receipt of gamma rays by respective PET detectors and provides timing data outputs that are provided to a processor that, in turn, calculates time-of-flight (TOF) of gamma rays through a patient in the cavity and uses the TOF of gamma rays in the reconstruction of images of the patient.

EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

NASA Astrophysics Data System (ADS)

Putna, E. Steve; Younkin, Todd R.; Leeson, Michael; Caudillo, Roman; Bacuita, Terence; Shah, Uday; Chandhok, Manish

2011-04-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 22nm half pitch node and beyond. According to recent assessments made at the 2010 EUVL Symposium, the readiness of EUV materials remains one of the top risk items for EUV adoption. The main development issue regarding EUV resists has been how to simultaneously achieve high resolution, high sensitivity, and low line width roughness (LWR). This paper describes our strategy, the current status of EUV materials, and the integrated post-development LWR reduction efforts made at Intel Corporation. Data collected utilizing Intel's Micro- Exposure Tool (MET) is presented in order to examine the feasibility of establishing a resist process that simultaneously exhibits <=22nm half-pitch (HP) L/S resolution at <=11.3mJ/cm2 with <=3nm LWR.

Degradation-Free Spectrometers for Solar EUV Measurements: A Progress Report

NASA Astrophysics Data System (ADS)

Wieman, S. R.; Judge, D. L.; Didkovsky, L. V.

2009-12-01

Solar EUV observations will be made using two new degradation-free EUV spectrometers on a sounding rocket flight scheduled for Summer 2010. The two instruments, a rare gas photoionization-based Optics-Free Spectrometer (OFS) and a Dual Grating Spectrometer (DGS), are filter-free and optics-free. OFS can measure the solar EUV spectrum with a spectral resolution comparable to that of grating-based EUV spectrometers. The DGS is designed to provide solar irradiance at Lyman-alpha and He II to overlap EUV observations from SOHO/SEM and SDO/EVE. Electronic and mechanical designs for the flight prototype instruments and results of tests performed with the instruments in the laboratory are reported. The spectrometers are being developed and demonstrated as part of the Degradation Free Spectrometers (DFS) project under NASA’s Low Cost Access to Space (LCAS) program and are supported by NASA Grant NNX08BA12G.

Single-expose patterning development for EUV lithography

NASA Astrophysics Data System (ADS)

De Silva, Anuja; Petrillo, Karen; Meli, Luciana; Shearer, Jeffrey C.; Beique, Genevieve; Sun, Lei; Seshadri, Indira; Oh, Taehwan; Han, Seulgi; Saulnier, Nicole; Lee, Joe; Arnold, John C.; Hamieh, Bassem; Felix, Nelson M.; Furukawa, Tsuyoshi; Singh, Lovejeet; Ayothi, Ramakrishnan

2017-03-01

Initial readiness of EUV (extreme ultraviolet) patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. With the substantial cost of EUV exposure there is significant interest in extending the capability to do single exposure patterning with EUV. To enable this, emphasis must be placed on the aspect ratios, adhesion, defectivity reduction, etch selectivity, and imaging control of the whole patterning process. Innovations in resist materials and processes must be included to realize the full entitlement of EUV lithography at 0.33NA. In addition, enhancements in the patterning process to enable good defectivity, lithographic process window, and post etch pattern fidelity are also required. Through this work, the fundamental material challenges in driving down the effective k1 factor will be highlighted.

Plans for the extreme ultraviolet explorer data base

NASA Technical Reports Server (NTRS)

Marshall, Herman L.; Dobson, Carl A.; Malina, Roger F.; Bowyer, Stuart

1988-01-01

The paper presents an approach for storage and fast access to data that will be obtained by the Extreme Ultraviolet Explorer (EUVE), a satellite payload scheduled for launch in 1991. The EUVE telescopes will be operated remotely from the EUVE Science Operation Center (SOC) located at the University of California, Berkeley. The EUVE science payload consists of three scanning telescope carrying out an all-sky survey in the 80-800 A spectral region and a Deep Survey/Spectrometer telescope performing a deep survey in the 80-250 A spectral region. Guest Observers will remotely access the EUVE spectrometer database at the SOC. The EUVE database will consist of about 2 X 10 to the 10th bytes of information in a very compact form, very similar to the raw telemetry data. A history file will be built concurrently giving telescope parameters, command history, attitude summaries, engineering summaries, anomalous events, and ephemeris summaries.

Ultrafast, large-field multiphoton microscopy based on an acousto-optic deflector and a spatial light modulator.

PubMed

Shao, Yonghong; Qin, Wan; Liu, Honghai; Qu, Junle; Peng, Xiang; Niu, Hanben; Gao, Bruce Z

2012-07-01

We present an ultrafast, large-field multiphoton excitation fluorescence microscope with high lateral and axial resolutions based on a two-dimensional (2-D) acousto-optical deflector (AOD) scanner and spatial light modulator (SLM). When a phase-only SLM is used to shape the near-infrared light from a mode-locked titanium:sapphire laser into a multifocus array including the 0-order beam, a 136 μm × 136 μm field of view is achieved with a 60× objective using a 2-D AOD scanner without any mechanical scan element. The two-photon fluorescence image of a neuronal network that was obtained using this system demonstrates that our microscopy permits observation of dynamic biological events in a large field with high-temporal and -spatial resolution.

Comparison of three coding strategies for a low cost structure light scanner

NASA Astrophysics Data System (ADS)

Xiong, Hanwei; Xu, Jun; Xu, Chenxi; Pan, Ming

2014-12-01

Coded structure light is widely used for 3D scanning, and different coding strategies are adopted to suit for different goals. In this paper, three coding strategies are compared, and one of them is selected to implement a low cost structure light scanner under the cost of €100. To reach this goal, the projector and the video camera must be the cheapest, which will lead to some problems related to light coding. For a cheapest projector, complex intensity pattern can't be generated; even if it can be generated, it can't be captured by a cheapest camera. Based on Gray code, three different strategies are implemented and compared, called phase-shift, line-shift, and bit-shift, respectively. The bit-shift Gray code is the contribution of this paper, in which a simple, stable light pattern is used to generate dense(mean points distance<0.4mm) and accurate(mean error<0.1mm) results. The whole algorithm details and some example are presented in the papers.

An Extreme-ultraviolet Wave Generating Upward Secondary Waves in a Streamer-like Solar Structure

NASA Astrophysics Data System (ADS)

Zheng, Ruisheng; Chen, Yao; Feng, Shiwei; Wang, Bing; Song, Hongqiang

2018-05-01

Extreme-ultraviolet (EUV) waves, spectacular horizontally propagating disturbances in the low solar corona, always trigger horizontal secondary waves (SWs) when they encounter the ambient coronal structure. We present the first example of upward SWs in a streamer-like structure after the passing of an EUV wave. This event occurred on 2017 June 1. The EUV wave happened during a typical solar eruption including a filament eruption, a coronal mass ejection (CME), and a C6.6 flare. The EUV wave was associated with quasi-periodic fast propagating (QFP) wave trains and a type II radio burst that represented the existence of a coronal shock. The EUV wave had a fast initial velocity of ∼1000 km s‑1, comparable to high speeds of the shock and the QFP wave trains. Intriguingly, upward SWs rose slowly (∼80 km s‑1) in the streamer-like structure after the sweeping of the EUV wave. The upward SWs seemed to originate from limb brightenings that were caused by the EUV wave. All of the results show that the EUV wave is a fast-mode magnetohydrodynamic (MHD) shock wave, likely triggered by the flare impulses. We suggest that part of the EUV wave was probably trapped in the closed magnetic fields of the streamer-like structure, and upward SWs possibly resulted from the release of slow-mode trapped waves. It is believed that the interplay of the strong compression of the coronal shock and the configuration of the streamer-like structure is crucial for the formation of upward SWs.

Design and development of the coaxial scanner as a compact high-performance thermal imager

NASA Astrophysics Data System (ADS)

Lettington, Alan H.

1994-09-01

This paper describes the original requirement of a light weight, high performance, low cost thermal imager which resulted in the design of the novel coaxial scanner. The early form of imager used a dedicated display to match the original cyclic scan sequence. With the advent of fast digital scan converters and the desire to use standard TV monitors the imager was redesigned and new TV compatible scan sequences devised. A version of this scanner is currently being manufactured by GEC Marconi Avionics, UK, and the paper concludes with examples of its application.

Impact of design-parameters on the optical performance of a high-power adaptive mirror

NASA Astrophysics Data System (ADS)

Koek, Wouter D.; Nijkerk, David; Smeltink, Jeroen A.; van den Dool, Teun C.; van Zwet, Erwin J.; van Baars, Gregor E.

2017-02-01

TNO is developing a High Power Adaptive Mirror (HPAM) to be used in the CO2 laser beam path of an Extreme Ultra- Violet (EUV) light source for next-generation lithography. In this paper we report on a developed methodology, and the necessary simulation tools, to assess the performance and associated sensitivities of this deformable mirror. Our analyses show that, given the current limited insight concerning the process window of EUV generation, the HPAM module should have an actuator pitch of <= 4 mm. Furthermore we have modelled the sensitivity of performance with respect to dimpling and actuator noise. For example, for a deformable mirror with an actuator pitch of 4 mm, and if the associated performance impact is to be limited to smaller than 5%, the actuator noise should be smaller than 45 nm (rms). Our tools assist in the detailed design process by assessing the performance impact of various design choices, including for example those that affect the shape and spectral content of the influence function.

Estimation of optimum density and temperature for maximum efficiency of tin ions in Z discharge extreme ultraviolet sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masnavi, Majid; Nakajima, Mitsuo; Hotta, Eiki

Extreme ultraviolet (EUV) discharge-based lamps for EUV lithography need to generate extremely high power in the narrow spectrum band of 13.5{+-}0.135 nm. A simplified collisional-radiative model and radiative transfer solution for an isotropic medium were utilized to investigate the wavelength-integrated light outputs in tin (Sn) plasma. Detailed calculations using the Hebrew University-Lawrence Livermore atomic code were employed for determination of necessary atomic data of the Sn{sup 4+} to Sn{sup 13+} charge states. The result of model is compared with experimental spectra from a Sn-based discharge-produced plasma. The analysis reveals that considerably larger efficiency compared to the so-called efficiency of amore » black-body radiator is formed for the electron density {approx_equal}10{sup 18} cm{sup -3}. For higher electron density, the spectral efficiency of Sn plasma reduces due to the saturation of resonance transitions.« less

Non-astigmatic imaging with matched pairs of spherically bent reflectors

DOEpatents

Bitter, Manfred Ludwig [Princeton, NJ; Hill, Kenneth Wayne [Plainsboro, NJ; Scott, Steven Douglas [Wellesley, MA; Feder, Russell [Newton, PA; Ko, Jinseok [Cambridge, MA; Rice, John E [N. Billerica, MA; Ince-Cushman, Alexander Charles [New York, NY; Jones, Frank [Manalapan, NJ

2012-07-10

Arrangements for the point-to-point imaging of a broad spectrum of electromagnetic radiation and ultrasound at large angles of incidence employ matched pairs of spherically bent reflectors to eliminate astigmatic imaging errors. Matched pairs of spherically bent crystals or spherically bent multi-layers are used for X-rays and EUV radiation; and matched pairs of spherically bent mirrors that are appropriate for the type of radiation are used with microwaves, infrared and visible light, or ultrasound. The arrangements encompass the two cases, where the Bragg angle--the complement to the angle of incidence in optics--is between 45.degree. and 90.degree. on both crystals/mirrors or between 0.degree. and 45.degree. on the first crystal/mirror and between 45.degree. and 90.degree. on the second crystal/mirror, where the angles of convergence and divergence are equal. For x-rays and EUV radiation, also the Bragg condition is satisfied on both spherically bent crystals/multi-layers.

Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

NASA Astrophysics Data System (ADS)

Fallica, Roberto; Stowers, Jason K.; Grenville, Andrew; Frommhold, Andreas; Robinson, Alex P. G.; Ekinci, Yasin

2016-07-01

The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general, the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called chemical sensitivity to account for all the postabsorption chemical reaction ongoing in the resist, which also predicts a quantitative clearing volume and clearing radius, due to the photon absorption in the resist. These parameters may help provide deeper insight into the underlying mechanisms of the EUV concepts of clearing volume and clearing radius, which are then defined and quantitatively calculated.

Extreme ultraviolet spectral irradiance measurements since 1946

NASA Astrophysics Data System (ADS)

Schmidtke, G.

2015-03-01

In the physics of the upper atmosphere the solar extreme ultraviolet (EUV) radiation plays a dominant role controlling most of the thermospheric/ionospheric (T/I) processes. Since this part of the solar spectrum is absorbed in the thermosphere, platforms to measure the EUV fluxes became only available with the development of rockets reaching altitude levels exceeding 80 km. With the availability of V2 rockets used in space research, recording of EUV spectra started in 1946 using photographic films. The development of pointing devices to accurately orient the spectrographs toward the sun initiated intense activities in solar-terrestrial research. The application of photoelectric recording technology enabled the scientists placing EUV spectrometers aboard satellites observing qualitatively strong variability of the solar EUV irradiance on short-, medium-, and long-term scales. However, as more measurements were performed more radiometric EUV data diverged due to the inherent degradation of the EUV instruments with time. Also, continuous recording of the EUV energy input to the T/I system was not achieved. It is only at the end of the last century that there was progress made in solving the serious problem of degradation enabling to monitore solar EUV fluxes with sufficient radiometric accuracy. The data sets available allow composing the data available to the first set of EUV data covering a period of 11 years for the first time. Based on the sophisticated instrumentation verified in space, future EUV measurements of the solar spectral irradiance (SSI) are promising accuracy levels of about 5% and less. With added low-cost equipment, real-time measurements will allow providing data needed in ionospheric modeling, e.g., for correcting propagation delays of navigation signals from space to earth. Adding EUV airglow and auroral emission monitoring by airglow cameras, the impact of space weather on the terrestrial T/I system can be studied with a spectral terrestrial irradiance camera (STI-Cam) and also be used investigating real-time space weather effects and deriving more detailed correction procedures for the evaluation of Global Navigation Satellite System (GNSS) signals. Progress in physics goes with achieving higher accuracy in measurements. This review historically guides the reader on the ways of exploring the impact of the variable solar radiation in the extreme ultraviolet spectral region on our upper atmosphere in the altitude regime from 80 to 1000 km.

Reconstruction and analysis of erythemal UV radiation time series from Hradec Králové (Czech Republic) over the past 50 years

NASA Astrophysics Data System (ADS)

Čížková, Klára; Láska, Kamil; Metelka, Ladislav; Staněk, Martin

2018-02-01

This paper evaluates the variability of erythemal ultraviolet (EUV) radiation from Hradec Králové (Czech Republic) in the period 1964-2013. The EUV radiation time series was reconstructed using a radiative transfer model and additional empirical relationships, with the final root mean square error of 9.9 %. The reconstructed time series documented the increase in EUV radiation doses in the 1980s and the 1990s (up to 15 % per decade), which was linked to the steep decline in total ozone (10 % per decade). The changes in cloud cover were the major factor affecting the EUV radiation doses especially in the 1960s, 1970s, and at the beginning of the new millennium. The mean annual EUV radiation doses in the decade 2004-2013 declined by 5 %. The factors affecting the EUV radiation doses differed also according to the chosen integration period (daily, monthly, and annually): solar zenith angle was the most important for daily doses, cloud cover, and surface UV albedo for their monthly means, and the annual means of EUV radiation doses were most influenced by total ozone column. The number of days with very high EUV radiation doses increased by 22 % per decade, the increase was statistically significant in all seasons except autumn. The occurrence of the days with very high EUV doses was influenced mostly by low total ozone column (82 % of days), clear-sky or partly cloudy conditions (74 % of days) and by increased surface albedo (19 % of days). The principal component analysis documented that the occurrence of days with very high EUV radiation doses was much affected by the positive phase of North Atlantic Oscillation with an Azores High promontory reaching over central Europe. In the stratosphere, a strong Arctic circumpolar vortex and the meridional inflow of ozone-poor air from the southwest were favorable for the occurrence of days with very high EUV radiation doses. This is the first analysis of the relationship between the high EUV radiation doses and macroscale circulation patterns, and therefore more attention should be given also to other dynamical variables that may affect the solar UV radiation on the Earth surface.

Coordinated XTE/EUVE Observations of Algol

NASA Technical Reports Server (NTRS)

Stern, Robert A.

1997-01-01

EUVE, ASCA, and XTE observed the eclipsing binary Algol (Beta Per) from 1-7 Feb. 96. The coordinated observation covered approximately 2 binary orbits of the system, with a net exposure of approximately 160 ksec for EUVE, 40 ksec for ASCA (in 4 pointing), and 90 ksec for XTE (in 45 pointings). We discuss results of modeling the combined EUVE, ASCA, and XTE data using continuous differential emission measure distributions, and provide constraints on the Fe abundance in the Algol system.

Seasonal variability of Martian ion escape through the plume and tail from MAVEN observations

NASA Astrophysics Data System (ADS)

Dong, Y.; Fang, X.; Brain, D. A.; McFadden, J. P.; Halekas, J. S.; Connerney, J. E. P.; Eparvier, F.; Andersson, L.; Mitchell, D.; Jakosky, B. M.

2017-04-01

We study the Mars Atmosphere and Volatile Evolution spacecraft observations of Martian planetary ion escape during two time periods: 11 November 2014 to 19 March 2015 and 4 June 2015 to 24 October 2015, with the focus on understanding the seasonal variability of Martian ion escape in response to the solar extreme ultraviolet (EUV) flux. We organize the >6 eV O+ ion data by the upstream electric field direction to estimate the escape rates through the plume and tail. To investigate the ion escape dependence on the solar EUV flux, we constrain the solar wind dynamic pressure and interplanetary magnetic filed strength and compare the ion escape rates through the plume and tail in different energy ranges under high and low EUV conditions. We found that the total >6 eV O+ escape rate increases from 2 to 3 × 1024 s-1 as the EUV irradiance increases by almost the same factor, mostly on the <1 keV tailward escape. The plume escape rate does not vary significantly with EUV. The relative contribution from the plume to the total escape varies between 30% and 20% from low to high EUV. Our results suggest that the Martian ion escape is sensitive to the seasonal EUV variation, and the contribution from plume escape becomes more important under low EUV conditions.

Update on EUV radiometry at PTB

NASA Astrophysics Data System (ADS)

Laubis, Christian; Barboutis, Annett; Buchholz, Christian; Fischer, Andreas; Haase, Anton; Knorr, Florian; Mentzel, Heiko; Puls, Jana; Schönstedt, Anja; Sintschuk, Michael; Soltwisch, Victor; Stadelhoff, Christian; Scholze, Frank

2016-03-01

The development of technology infrastructure for EUV Lithography (EUVL) still requires higher levels of technology readiness in many fields. A large number of new materials will need to be introduced. For example, development of EUV compatible pellicles to adopt an approved method from optical lithography for EUVL needs completely new thin membranes which have not been available before. To support these developments, PTB with its decades of experience [1] in EUV metrology [2] provides a wide range of actinic and non actinic measurements at in-band EUV wavelengths as well as out of band. Two dedicated, complimentary EUV beamlines [3] are available for radiometric [4,5] characterizations benefiting from small divergence or from adjustable spot size respectively. The wavelength range covered reaches from below 1 nm to 45 nm [6] for the EUV beamlines [7] to longer wavelengths if in addition the VUV beamline is employed. The standard spot size is 1 mm by 1 mm with an option to go as low as 0.1 mm to 0.1 mm. A separate beamline offers an exposure setup. Exposure power levels of 20 W/cm2 have been employed in the past, lower fluencies are available by attenuation or out of focus exposure. Owing to a differential pumping stage, the sample can be held under defined gas conditions during exposure. We present an updated overview on our instrumentation and analysis capabilities for EUV metrology and provide data for illustration.

Integrated display scanner

DOEpatents

Veligdan, James T.

2004-12-21

A display scanner includes an optical panel having a plurality of stacked optical waveguides. The waveguides define an inlet face at one end and a screen at an opposite end, with each waveguide having a core laminated between cladding. A projector projects a scan beam of light into the panel inlet face for transmission from the screen as a scan line to scan a barcode. A light sensor at the inlet face detects a return beam reflected from the barcode into the screen. A decoder decodes the return beam detected by the sensor for reading the barcode. In an exemplary embodiment, the optical panel also displays a visual image thereon.

Molecular imaging using light-absorbing imaging agents and a clinical optical breast imaging system--a phantom study.

PubMed

van de Ven, Stephanie M W Y; Mincu, Niculae; Brunette, Jean; Ma, Guobin; Khayat, Mario; Ikeda, Debra M; Gambhir, Sanjiv S

2011-04-01

The aim of the study was to determine the feasibility of using a clinical optical breast scanner with molecular imaging strategies based on modulating light transmission. Different concentrations of single-walled carbon nanotubes (SWNT; 0.8-20.0 nM) and black hole quencher-3 (BHQ-3; 2.0-32.0 µM) were studied in specifically designed phantoms (200-1,570 mm(3)) with a clinical optical breast scanner using four wavelengths. Each phantom was placed in the scanner tank filled with optical matching medium. Background scans were compared to absorption scans, and reproducibility was assessed. All SWNT phantoms were detected at four wavelengths, with best results at 684 nm. Higher concentrations (≥8.0 µM) were needed for BHQ-3 detection, with the largest contrast at 684 nm. The optical absorption signal was dependent on phantom size and concentration. Reproducibility was excellent (intraclass correlation 0.93-0.98). Nanomolar concentrations of SWNT and micromolar concentrations of BHQ-3 in phantoms were reproducibly detected, showing the potential of light absorbers, with appropriate targeting ligands, as molecular imaging agents for clinical optical breast imaging.

EUV Spectroscopy of High-redshift X-ray Objects

NASA Astrophysics Data System (ADS)

Kowalski, Michael Paul; Wolff, M. T.; Wood, K. S.; Barbee, T. W., Jr.

2010-03-01

As astronomical observations are pushed to cosmological distances (z>3) the spectral energy distributions of X-ray objects, AGNs for example, will have their maxima redshifted into the EUV waveband ( 90-912 Å/0.1-0.01 keV). Consequently, a wealth of spectral diagnostics, provided by, for example, the Fe L-shell complex ( 60-6 Å/0.2-2.0 keV) and the O VII/VIII lines ( 20 Å/0.5 keV), will be lost to X-ray instruments operating at traditional ( 0.5-10 keV) and higher X-ray energies. There are precedents in other wavebands. For example, HST evolutionary studies will become largely the province of JWST. Despite the successes of EUVE, the ROSAT WFC, and the Chandra LETG, the EUV continues to be unappreciated and under-utilized, partly because of a preconception that absorption by neutral galactic Hydrogen in the ISM prevents any useful extragalactic measurements at all EUV wavelengths and, until recently, by a lack of a suitable enabling technology. Thus, if future planned X-ray missions (e.g., IXO, Gen-X) are optimized again for traditional X-ray energies, their performance (effective area, resolving power) will be cut off at ultrasoft X-ray energies or at best be radically reduced in the EUV. This opens up a critical gap in performance located right at short EUV wavelengths, where the critical X-ray spectral transitions occur in high-z objects. However, normal-incidence multilayer-grating technology, which performs best precisely at such wavelengths, together with advanced nano-laminate fabrication techniques have been developed and are now mature to the point where advanced EUV instrument designs with performance complementary to IXO and Gen-X are practical. Such EUV instruments could be flown either independently or as secondary instruments on these X-ray missions. We present here a critical examination of the limits placed on extragalactic EUV measurements by ISM absorption, the range where high-z measurements are practical, and the requirements this imposes on next-generation instrument designs.

Extreme Ultraviolet Variability Experiment (EVE) on the Solar Dynamics Observatory (SDO): Overview of Science Objectives, Instrument Design, Data Products, and Model Developments

NASA Technical Reports Server (NTRS)

Woods, T. N.; Eparvier, F. G.; Hock, R.; Jones, A. R.; Woodraska, D.; Judge, D.; Didkovsky, L.; Lean, J.; Mariska, J.; Warren, H.;

EUV Waves Driven by the Sudden Expansion of Transequatorial Loops Caused by Coronal Jets

NASA Astrophysics Data System (ADS)

Shen, Yuandeng; Tang, Zehao; Miao, Yuhu; Su, Jiangtao; Liu, Yu

2018-06-01

We present two events to study the driving mechanism of extreme-ultraviolet (EUV) waves that are not associated with coronal mass ejections (CMEs), by using high-resolution observations taken by the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory. Observational results indicate that the observed EUV waves were accompanied by flares and coronal jets, but not the CMEs that were regarded as drivers of most EUV waves in previous studies. In the first case, it is observed that a coronal jet is ejected along a transequatorial loop system at a plane-of-the-sky (POS) speed of 335 ± 22 km s{}-1; in the meantime, an arc-shaped EUV wave appeared on the eastern side of the loop system. In addition, the EUV wave further interacted with another interconnecting loop system and launched a fast propagating (QFP) magnetosonic wave along the loop system, which had a period of 200 s and a speed of 388 ± 65 km s{}-1, respectively. In the second case, we observed a coronal jet that ejected at a POS speed of 282 ± 44 km s{}-1 along a transequatorial loop system as well as the generation of bright EUV waves on the eastern side of the loop system. Based on the observational results, we propose that the observed EUV waves on the eastern side of the transequatorial loop systems are fast-mode magnetosonic waves and that they are driven by the sudden lateral expansion of the transequatorial loop systems due to the direct impingement of the associated coronal jets, while the QFP wave in the fist case formed due to the dispersive evolution of the disturbance caused by the interaction between the EUV wave and the interconnecting coronal loops. It is noted that EUV waves driven by sudden loop expansions have shorter lifetimes than those driven by CMEs.

Maskless EUV lithography: an already difficult technology made even more complicated?

NASA Astrophysics Data System (ADS)

Chen, Yijian

2012-03-01

In this paper, we present the research progress made in maskless EUV lithography and discuss the emerging opportunities for this disruptive technology. It will be shown nanomirrors based maskless approach is one path to costeffective and defect-free EUV lithography, rather than making it even more complicated. The focus of our work is to optimize the existing vertical comb process and scale down the mirror size from several microns to sub-micron regime. The nanomirror device scaling, system configuration, and design issues will be addressed. We also report our theoretical and simulation study of reflective EUV nanomirror based imaging behavior. Dense line/space patterns are formed with an EUV nanomirror array by assigning a phase shift of π to neighboring nanomirrors. Our simulation results show that phase/intensity imbalance is an inherent characteristic of maskless EUV lithography while it only poses a manageable challenge to CD control and process window. The wafer scan and EUV laser jitter induced image blur phenomenon is discussed and a blurred imaging theory is constructed. This blur effect is found to degrade the image contrast at a level that mainly depends on the wafer scan speed.

Optical proximity correction for anamorphic extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Clifford, Chris; Lam, Michael; Raghunathan, Ananthan; Jiang, Fan; Fenger, Germain; Adam, Kostas

2017-10-01

The change from isomorphic to anamorphic optics in high numerical aperture (NA) extreme ultraviolet (EUV) scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated, and verified by rigorous simulation. Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking (MRC). OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs which are more tolerant to mask errors.

The origin of the flatbed scanner artifacts in radiochromic film dosimetry—key experiments and theoretical descriptions

NASA Astrophysics Data System (ADS)

Schoenfeld, Andreas A.; Wieker, Soeren; Harder, Dietrich; Poppe, Bjoern

2016-11-01

The optical origin of the lateral response and orientation artifacts, which occur when using EBT3 and EBT-XD radiochromic films together with flatbed scanners, has been reinvestigated by experimental and theoretical means. The common feature of these artifacts is the well-known parabolic increase in the optical density OD(x)  =  -log10 I(x)/I 0(x) versus offset x from the scanner midline (Poppinga et al 2014 Med. Phys. 41 021707). This holds for landscape and portrait orientations as well as for the three color channels. Dose-independent optical subjects, such as neutral density filters, linear polarizers, the EBT polyester foil and diffusive glass, also present the parabolic lateral artifact when scanned with a flatbed scanner. The curvature parameter c of the parabola function OD(x)  =  c 0  +  cx 2 is found to be a linear function of the dose, the parameters of which are influenced by the film orientation and film type, EBT3 or EBT-XD. The ubiquitous parabolic shape of function OD(x) is attributed (a) to the optical path-length effect (van Battum et al 2016 Phys. Med. Biol. 61 625-49), due to the increasing obliquity of the optical scanner light associated with increasing offset x from the scanner midline, and (b) and (c) to the partial polarization and scattering of the light leaving the film, which affect the ratio ~I(x)/{{I}0}(x) , thus making OD(x) increase with x 2. The orientation effect results from the changes of effects (b) and (c) associated with turning the film position, and thereby the orientation of the polymer structure of the sensitive film layer. In a comparison of experimental results obtained with selected optical subjects, the relative weights of the contributions of the optical path-length effect and the polarization and scattering of light leaving the films to the lateral response artifact have been estimated to be of the same order of magnitude. Mathematical models of these causes for the parabolic shape of function OD(x) are given as appendices.

The origin of the flatbed scanner artifacts in radiochromic film dosimetry-key experiments and theoretical descriptions.

PubMed

Schoenfeld, Andreas A; Wieker, Soeren; Harder, Dietrich; Poppe, Bjoern

2016-11-07

The optical origin of the lateral response and orientation artifacts, which occur when using EBT3 and EBT-XD radiochromic films together with flatbed scanners, has been reinvestigated by experimental and theoretical means. The common feature of these artifacts is the well-known parabolic increase in the optical density OD(x)  =  -log 10 I(x)/I 0 (x) versus offset x from the scanner midline (Poppinga et al 2014 Med. Phys. 41 021707). This holds for landscape and portrait orientations as well as for the three color channels. Dose-independent optical subjects, such as neutral density filters, linear polarizers, the EBT polyester foil and diffusive glass, also present the parabolic lateral artifact when scanned with a flatbed scanner. The curvature parameter c of the parabola function OD(x)  =  c 0   +  cx 2 is found to be a linear function of the dose, the parameters of which are influenced by the film orientation and film type, EBT3 or EBT-XD. The ubiquitous parabolic shape of function OD(x) is attributed (a) to the optical path-length effect (van Battum et al 2016 Phys. Med. Biol. 61 625-49), due to the increasing obliquity of the optical scanner light associated with increasing offset x from the scanner midline, and (b) and (c) to the partial polarization and scattering of the light leaving the film, which affect the ratio [Formula: see text], thus making OD(x) increase with x 2 . The orientation effect results from the changes of effects (b) and (c) associated with turning the film position, and thereby the orientation of the polymer structure of the sensitive film layer. In a comparison of experimental results obtained with selected optical subjects, the relative weights of the contributions of the optical path-length effect and the polarization and scattering of light leaving the films to the lateral response artifact have been estimated to be of the same order of magnitude. Mathematical models of these causes for the parabolic shape of function OD(x) are given as appendices.

High reflectance coatings for space applications in the EUV

NASA Technical Reports Server (NTRS)

Keski-Kuha, Ritva A. M.; Gum, Jeffrey S.; Osantowski, John F.; Fleetwood, Charles M.

1993-01-01

Advances in optical coating and materials technology have made possible the development of instruments with substantially improved efficiency and made possible to consider more complex optical designs in the EUV. The importance of recent developments in chemical vapor deposited silicon carbide (CVD-SiC), SiC films and multilayer coatings is discussed in the context of EUV instrumentation design. The EUV performance of these coatings as well as some strengths and problem areas for their use in space will be addressed.

Quantitation of clinical feedback on image quality differences between two CT scanner models.

PubMed

Bache, Steven T; Stauduhar, Paul J; Liu, Xinming; Loyer, Evelyne M; John, Rong X

2017-03-01

The aim of this work was to quantitate differences in image quality between two GE CT scanner models - the LightSpeed VCT ("VCT") and Discovery HD750 ("HD") - based upon feedback from radiologists at our institution. First, 3 yrs of daily QC images of the manufacturer-provided QC phantom from 10 scanners - five of each model - were analyzed for both noise magnitude, measured as CT-number standard deviation, and noise power spectrum within the uniform water section. The same phantom was then scanned on four of each model and analyzed for low contrast detectability (LCD) using a built-in LCD tool at the scanner console. An anthropomorphic phantom was scanned using the same eight scanners. A slice within the abdomen section was chosen and three ROIs were placed in regions representing liver, stomach, and spleen. Both standard deviation of CT-number and LCD value was calculated for each image. Noise magnitude was 8.5% higher in HD scanners compared to VCT scanners. An associated increase in the magnitude of the noise power spectra were also found, but both peak and mean NPS frequency were not different between the two models. VCT scanners outperformed HD scanners with respect to LCD by an average of 13.1% across all scanners and phantoms. Our results agree with radiologist feedback, and necessitate a closer look at our body CT protocols among different scanner models at our institution. © 2017 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

Modeling 13.3nm Fe XXIII Flare Emissions Using the GOES-R EXIS Instrument

NASA Astrophysics Data System (ADS)

Rook, H.; Thiemann, E.

2017-12-01

The solar EUV spectrum is dominated by atomic transitions in ionized atoms in the solar atmosphere. As solar flares evolve, plasma temperatures and densities change, influencing abundances of various ions, changing intensities of different EUV wavelengths observed from the sun. Quantifying solar flare spectral irradiance is important for constraining models of Earth's atmosphere, improving communications quality, and controlling satellite navigation. However, high time cadence measurements of flare irradiance across the entire EUV spectrum were not available prior to the launch of SDO. The EVE MEGS-A instrument aboard SDO collected 0.1nm EUV spectrum data from 2010 until 2014, when the instrument failed. No current or future instrument is capable of similar high resolution and time cadence EUV observation. This necessitates a full EUV spectrum model to study EUV phenomena at Earth. It has been recently demonstrated that one hot flare EUV line, such as the 13.3nm Fe XXIII line, can be used to model cooler flare EUV line emissions, filling the role of MEGS-A. Since unblended measurements of Fe XXIII are typically unavailable, a proxy for the Fe XXIII line must be found. In this study, we construct two models of this line, first using the GOES 0.1-0.8nm soft x-ray (SXR) channel as the Fe XXIII proxy, and second using a physics-based model dependent on GOES emission measure and temperature data. We determine that the more sophisticated physics-based model shows better agreement with Fe XXIII measurements, although the simple proxy model also performs well. We also conclude that the high correlation between Fe XXIII emissions and the GOES 0.1-0.8nm band is because both emissions tend to peak near the GOES emission measure peak despite large differences in their contribution functions.

Actinic defect counting statistics over 1-cm2 area of EUVL mask blank

NASA Astrophysics Data System (ADS)

Jeong, Seongtae; Lai, Chih-wei; Rekawa, Senajith; Walton, Christopher C.; Bokor, Jeffrey

2000-07-01

As a continuation of comparison experiments between EUV inspection and visible inspection of defects on EUVL mask blanks, we report on the result of an experiment where the EUV defect inspection tool is used to perform at-wavelength defect counting over 1 cm2 of EUVL mask blank. Initial EUV inspection found five defects over the scanned area and the subsequent optical scattering inspection was able to detect all of the five defects. Therefore, if there are any defects that are only detectable by EUV inspection, the density is lower than the order of unity per cm2. An upgrade path to substantially increase the overall throughput of the EUV inspection system is also identified in the manuscript.

The Extreme Ultraviolet Flux of Very Low Mass Stars

NASA Astrophysics Data System (ADS)

Drake, Jeremy

2017-09-01

The X-ray and EUV emission of stars is vital for understanding the atmospheres and evolution of their planets. The coronae of dwarf stars later than M6 behave differently to those of earlier spectral types and are more X-ray dim and radio bright. Too faint to have been observed by EUVE, their EUV behavior is currently highly uncertain. We propose to observe a small sample of late M dwarfs using the off-axis HRC-S thin Al" filter that is sensitive to EUV emission in the 50-200 A range. The measured fluxes will be used to understand the amount of cooler coronal plasma present, and extend X-ray-EUV flux relations to the latest stellar types.

Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyama, Tomoko Gowa, E-mail: ohyama.tomoko@qst.go.jp; Oshima, Akihiro; Tagawa, Seiichi, E-mail: tagawa@sanken.osaka-u.ac.jp

2016-08-15

It is a challenge to obtain sufficient extreme ultraviolet (EUV) exposure time for fundamental research on developing a new class of high sensitivity resists for extreme ultraviolet lithography (EUVL) because there are few EUV exposure tools that are very expensive. In this paper, we introduce an easy method for predicting EUV resist sensitivity by using conventional electron beam (EB) sources. If the chemical reactions induced by two ionizing sources (EB and EUV) are the same, the required absorbed energies corresponding to each required exposure dose (sensitivity) for the EB and EUV would be almost equivalent. Based on this theory, wemore » calculated the resist sensitivities for the EUV/soft X-ray region. The estimated sensitivities were found to be comparable to the experimentally obtained sensitivities. It was concluded that EB is a very useful exposure tool that accelerates the development of new resists and sensitivity enhancement processes for 13.5 nm EUVL and 6.x nm beyond-EUVL (BEUVL).« less

AWARE - The Automated EUV Wave Analysis and REduction algorithm

NASA Astrophysics Data System (ADS)

Ireland, J.; Inglis; A. R.; Shih, A. Y.; Christe, S.; Mumford, S.; Hayes, L. A.; Thompson, B. J.

2016-10-01

Extreme ultraviolet (EUV) waves are large-scale propagating disturbances observed in the solar corona, frequently associated with coronal mass ejections and flares. Since their discovery over two hundred papers discussing their properties, causes and physics have been published. However, their fundamental nature and the physics of their interactions with other solar phenomena are still not understood. To further the understanding of EUV waves, and their relation to other solar phenomena, we have constructed the Automated Wave Analysis and REduction (AWARE) algorithm for the detection of EUV waves over the full Sun. The AWARE algorithm is based on a novel image processing approach to isolating the bright wavefront of the EUV as it propagates across the corona. AWARE detects the presence of a wavefront, and measures the distance, velocity and acceleration of that wavefront across the Sun. Results from AWARE are compared to results from other algorithms for some well known EUV wave events. Suggestions are also give for further refinements to the basic algorithm presented here.

Ionospheric Change and Solar EUV Irradiance

NASA Astrophysics Data System (ADS)

Sojka, J. J.; David, M.; Jensen, J. B.; Schunk, R. W.

2011-12-01

The ionosphere has been quantitatively monitored for the past six solar cycles. The past few years of observations are showing trends that differ from the prior cycles! Our good statistical relationships between the solar radio flux index at 10.7 cm, the solar EUV Irradiance, and the ionospheric F-layer peak density are showing indications of divergence! Present day discussion of the Sun-Earth entering a Dalton Minimum would suggest change is occurring in the Sun, as the driver, followed by the Earth, as the receptor. The dayside ionosphere is driven by the solar EUV Irradiance. But different components of this spectrum affect the ionospheric layers differently. For a first time the continuous high cadence EUV spectra from the SDO EVE instrument enable ionospheric scientists the opportunity to evaluate solar EUV variability as a driver of ionospheric variability. A definitive understanding of which spectral components are responsible for the E- and F-layers of the ionosphere will enable assessments of how over 50 years of ionospheric observations, the solar EUV Irradiance has changed. If indeed the evidence suggesting the Sun-Earth system is entering a Dalton Minimum periods is correct, then the comprehensive EVE solar EUV Irradiance data base combined with the ongoing ionospheric data bases will provide a most fortuitous fiduciary reference baseline for Sun-Earth dependencies. Using the EVE EUV Irradiances, a physics based ionospheric model (TDIM), and 50 plus years of ionospheric observation from Wallops Island (Virginia) the above Sun-Earth ionospheric relationship will be reported on.

A new storage-ring light source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Alex

2015-06-01

A recently proposed technique in storage ring accelerators is applied to provide potential high-power sources of photon radiation. The technique is based on the steady-state microbunching (SSMB) mechanism. As examples of this application, one may consider a high-power DUV photon source for research in atomic and molecular physics or a high-power EUV radiation source for industrial lithography. A less challenging proof-of-principle test to produce IR radiation using an existing storage ring is also considered.

On the derivation of empirical limits on the helium abundance in coronal holes below 1.5 solar radius

NASA Technical Reports Server (NTRS)

Habbal, Shadia Rifai; Esser, Ruth

1994-01-01

We present a simple technique describing how limits on the helium abundance, alpha, defined as the ratio of helium to proton number density, can be inferred from measurements of the electron density and temperature below 1.5 solar radius. As an illustration, we apply this technique to two different data sets: emission-line intensities in the extreme ultraviolet (EUV) and white-light observations, both measured in polar coronal holes. For the EUV data, the temperature gradient is derived from line intensity ratios, and the density gradient is replaced by the gradient of the line intensity. The lower limit on alpha derived from these data is 0.2-0.3 at 1 solar radius and drops very sharply to interplanetary values of a few percent below 1.06 solar radius. The white-light observations yield density gradients in the inner corona beyond 1.25 solar radius but do not have corresponding temperature gradients. In this case we consider an isothermal atmosphere, and derive an upper limit of 0.2 for alpha. These examples are used to illustrate how this technique could be applicable to the more extensive data to be obtained with the upcoming SOHO mission. Although only ranges on alpha can be derived, the application of the technique to data currently available merely points to the fact that alpha can be significantly large in the inner corona.

Four-mirror extreme ultraviolet (EUV) lithography projection system

DOEpatents

Cohen, Simon J; Jeong, Hwan J; Shafer, David R

2000-01-01

The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

The optimization of the inverted occulter of the solar orbiter/METIS coronagraph/spectrometer

NASA Astrophysics Data System (ADS)

Landini, F.; Vives, S.; Romoli, M.; Guillon, C.; Pancrazzi, M.; Escolle, C.; Focardi, M.; Fineschi, S.; Antonucci, E.; Nicolini, G.; Naletto, G.; Nicolosi, P.; Spadaro, D.

2017-11-01

The coronagraph/spectrometer METIS (Multi Element Telescope for Imaging and Spectroscopy), selected to fly aboard the Solar Orbiter ESA/NASA mission, is conceived to perform imaging (in visible, UV and EUV) and spectroscopy (in EUV) of the solar corona. It is an integrated instrument suite located on a single optical bench and sharing a unique aperture on the satellite heat shield. As every coronagraph, METIS is highly demanding in terms of stray light suppression. In order to meet the strict thermal requirements of Solar Orbiter, METIS optical design has been optimized by moving the entrance pupil at the level of the external occulter on the S/C thermal shield, thus reducing the size of the external aperture. The scheme is based on an inverted external-occulter (IEO). The IEO consists of a circular aperture on the Solar Orbiter thermal shield. A spherical mirror rejects back the disk-light through the IEO. The experience built on all the previous space coronagraphs forces designers to dedicate a particular attention to the occulter optimization. Two breadboards were manufactured to perform occulter optimization measurements: BOA (Breadboard of the Occulting Assembly) and ANACONDA (AN Alternative COnfiguration for the Occulting Native Design Assembly). A preliminary measurement campaign has been carried on at the Laboratoire d'Astrophysique de Marseille. In this paper we describe BOA and ANACONDA designs, the laboratory set-up and the preliminary results.

Complete-arch accuracy of intraoral scanners.

PubMed

Treesh, Joshua C; Liacouras, Peter C; Taft, Robert M; Brooks, Daniel I; Raiciulescu, Sorana; Ellert, Daniel O; Grant, Gerald T; Ye, Ling

2018-04-30

Intraoral scanners have shown varied results in complete-arch applications. The purpose of this in vitro study was to evaluate the complete-arch accuracy of 4 intraoral scanners based on trueness and precision measurements compared with a known reference (trueness) and with each other (precision). Four intraoral scanners were evaluated: CEREC Bluecam, CEREC Omnicam, TRIOS Color, and Carestream CS 3500. A complete-arch reference cast was created and printed using a 3-dimensional dental cast printer with photopolymer resin. The reference cast was digitized using a laboratory-based white light 3-dimensional scanner. The printed reference cast was scanned 10 times with each intraoral scanner. The digital standard tessellation language (STL) files from each scanner were then registered to the reference file and compared with differences in trueness and precision using a 3-dimensional modeling software. Additionally, scanning time was recorded for each scan performed. The Wilcoxon signed rank, Kruskal-Wallis, and Dunn tests were used to detect differences for trueness, precision, and scanning time (α=.05). Carestream CS 3500 had the lowest overall trueness and precision compared with Bluecam and TRIOS Color. The fourth scanner, Omnicam, had intermediate trueness and precision. All of the scanners tended to underestimate the size of the reference file, with exception of the Carestream CS 3500, which was more variable. Based on visual inspection of the color rendering of signed differences, the greatest amount of error tended to be in the posterior aspects of the arch, with local errors exceeding 100 μm for all scans. The single capture scanner Carestream CS 3500 had the overall longest scan times and was significantly slower than the continuous capture scanners TRIOS Color and Omnicam. Significant differences in both trueness and precision were found among the scanners. Scan times of the continuous capture scanners were faster than the single capture scanners. Published by Elsevier Inc.

Effects of Bright Light Therapy of Sleep, Cognition, Brain Function, and Neurochemistry in Mild Traumatic Brain Injury

DTIC Science & Technology

2012-01-01

computerized stimulation paradigms for use during functional neuroimaging (i.e., MSIT). Accomplishments: • The following computer tasks were...and Stability Test. • Programming of all computerized functional MRI stimulation paradigms and assessment tasks using E-prime software was completed...Computer stimulation paradigms were tested in the scanner environment to ensure that they could be presented and seen by subjects in the scanner

EUVE observations of the Moon

NASA Technical Reports Server (NTRS)

Gladstone, G. R.; Mcdonald, J. S.; Boyd, W. T.

1993-01-01

During its all-sky survey, the Extreme Ultraviolet Explorer (EUVE) satellite observed the Moon several times at first and last quarters, and once near the Dec. 10, 1992 lunar eclipse. We present a preliminary reduction and analysis of this data, in the form of EUV images of the Moon and derived albedos.

Coordinated ASCA/EUVE/XTE Observations of Algol

NASA Technical Reports Server (NTRS)

Stern, Robert A.

1997-01-01

EUVE, Advanced Satellite for Cosmology and Astrophysics (ASCA), and X-ray Timing Explorer (XTE) observed the eclipsing binary Algol (Beta Per) from 1-7 Feb 1996. The coordinated observation covered approx. 2 binary orbits of the system, with a net exposure of approx. 160 ksec for EUVE, 40 ksec for ASCA (in 4 pointings), and 90 ksec for XTE (in 45 pointings). We discuss results of modeling the combined EUVE, ASCA, and XTE data using continuous differential emission measure distributions, and provide constraints on the abundance in the Algol system.

The Extreme Ultraviolet Explorer

NASA Technical Reports Server (NTRS)

Malina, R. F.; Bowyer, S.; Lampton, M.; Finley, D.; Paresce, F.; Penegor, G.; Heetderks, H.

1982-01-01

The Extreme Ultraviolet Explorer Mission is described. The purpose of this mission is to search the celestial sphere for astronomical sources of extreme ultraviolet (EUV) radiation (100 to 1000 A). The search will be accomplished with the use of three EUV telescopes, each sensitive to different bands within the EUV band. A fourth telescope will perform a higher sensitivity search of a limited sample of the sky in a single EUV band. In six months, the entire sky will be scanned at a sensitivity level comparable to existing surveys in other more traditional astronomical bandpasses.

EUV lithography for 30nm half pitch and beyond: exploring resolution, sensitivity, and LWR tradeoffs

NASA Astrophysics Data System (ADS)

Putna, E. Steve; Younkin, Todd R.; Chandhok, Manish; Frasure, Kent

2009-03-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 32nm half-pitch node and beyond. Readiness of EUV materials is currently one high risk area according to assessments made at the 2008 EUVL Symposium. The main development issue regarding EUV resist has been how to simultaneously achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the strategy and current status of EUV resist development at Intel Corporation. Data is presented utilizing Intel's Micro-Exposure Tool (MET) examining the feasibility of establishing a resist process that simultaneously exhibits <=30nm half-pitch (HP) L/S resolution at <=10mJ/cm2 with <=4nm LWR.

EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

NASA Astrophysics Data System (ADS)

Putna, E. Steve; Younkin, Todd R.; Caudillo, Roman; Chandhok, Manish

2010-04-01

The International Technology Roadmap for Semiconductors (ITRS) denotes Extreme Ultraviolet (EUV) lithography as a leading technology option for realizing the 22nm half pitch node and beyond. Readiness of EUV materials is currently one high risk area according to recent assessments made at the 2009 EUVL Symposium. The main development issue regarding EUV resist has been how to simultaneously achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the strategy and current status of EUV resist development at Intel Corporation. Data collected utilizing Intel's Micro-Exposure Tool (MET) is presented in order to examine the feasibility of establishing a resist process that simultaneously exhibits <=22nm half-pitch (HP) L/S resolution at <= 12.5mJ/cm2 with <= 4nm LWR.

Utilizing the EUVE Innovative Technology Testbed to Reduce Operations Cost for Present and Future Orbiting Mission

NASA Technical Reports Server (NTRS)

1997-01-01

This report summarizes work done under Cooperative Agreement (CA) on the following testbed projects: TERRIERS - The development of the ground systems to support the TERRIERS satellite mission at Boston University (BU). HSTS - The application of ARC's Heuristic Scheduling Testbed System (HSTS) to the EUVE satellite mission. SELMON - The application of NASA's Jet Propulsion Laboratory's (JPL) Selective Monitoring (SELMON) system to the EUVE satellite mission. EVE - The development of the EUVE Virtual Environment (EVE), a prototype three-dimensional (3-D) visualization environment for the EUVE satellite and its sensors, instruments, and communications antennae. FIDO - The development of the Fault-Induced Document Officer (FIDO) system, a prototype application to respond to anomalous conditions by automatically searching for, retrieving, and displaying relevant documentation for an operators use.

OML: optical maskless lithography for economic design prototyping and small-volume production

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Bleeker, Arno; Hintersteiner, Jason; Troost, Kars; Freyer, Jorge; van der Mast, Karel

2004-05-01

The business case for Maskless Lithography is more compelling than ever before, due to more critical processes, rising mask costs and shorter product cycles. The economics of Maskless Lithography gives a crossover volume from Maskless to mask-based lithography at surprisingly many wafers per mask for surprisingly few wafers per hour throughput. Also, small-volume production will in many cases be more economical with Maskless Lithography, even when compared to "shuttle" schemes, reticles with multiple layers, etc. The full benefit of Maskless Lithography is only achievable by duplicating processes that are compatible with volume production processes on conventional scanners. This can be accomplished by the integration of pattern generators based on spatial light modulator technology with state-of-the-art optical scanner systems. This paper reports on the system design of an Optical Maskless Scanner in development by ASML and Micronic: small-field optics with high demagnification, variable NA and illumination schemes, spatial light modulators with millions of MEMS mirrors on CMOS drivers, a data path with a sustained data flow of more than 250 GPixels per second, stitching of sub-fields to scanner fields, and rasterization and writing strategies for throughput and good image fidelity. Predicted lithographic performance based on image simulations is also shown.

Continued Analysis of EUVE Solar System Observations

NASA Technical Reports Server (NTRS)

Gladstone, G. Randall

2001-01-01

This is the final report for this project. We proposed to continue our work on extracting important results from the EUVE (Extreme UltraViolet Explorer) archive of lunar and jovian system observations. In particular, we planned to: (1) produce several monochromatic images of the Moon at the wavelengths of the brightest solar EUV emission lines; (2) search for evidence of soft X-ray emissions from the Moon and/or X-ray fluorescence at specific EUV wavelengths; (3) search for localized EUV and soft X-ray emissions associated with each of the Galilean satellites; (4) search for correlations between localized Io Plasma Torus (IPT) brightness and volcanic activity on Io; (5) search for soft X-ray emissions from Jupiter; and (6) determine the long term variability of He 58.4 nm emissions from Jupiter, and relate these to solar variability. However, the ADP review panel suggested that the work concentrate on the Jupiter/IPT observations, and provided half the requested funding. Thus we have performed no work on the first two tasks, and instead concentrated on the last three. In addition we used funds from this project to support reduction and analysis of EUVE observations of Venus. While this was not part of the original statement of work, it is entirely in keeping with extracting important results from EUVE solar system observations.

Protection efficiency of a standard compliant EUV reticle handling solution

NASA Astrophysics Data System (ADS)

He, Long; Lystad, John; Wurm, Stefan; Orvek, Kevin; Sohn, Jaewoong; Ma, Andy; Kearney, Patrick; Kolbow, Steve; Halbmaier, David

2009-03-01

For successful implementation of extreme ultraviolet lithography (EUVL) technology for late cycle insertion at 32 nm half-pitch (hp) and full introduction for 22 nm hp high volume production, the mask development infrastructure must be in place by 2010. The central element of the mask infrastructure is contamination-free reticle handling and protection. Today, the industry has already developed and balloted an EUV pod standard for shipping, transporting, transferring, and storing EUV masks. We have previously demonstrated that the EUV pod reticle handling method represents the best approach in meeting EUVL high volume production requirements, based on then state-of-the-art inspection capability at ~53nm polystyrene latex (PSL) equivalent sensitivity. In this paper, we will present our latest data to show defect-free reticle handling is achievable down to 40 nm particle sizes, using the same EUV pod carriers as in the previous study and the recently established world's most advanced defect inspection capability of ~40 nm SiO2 equivalent sensitivity. The EUV pod is a worthy solution to meet EUVL pilot line and pre-production exposure tool development requirements. We will also discuss the technical challenges facing the industry in refining the EUV pod solution to meet 22 nm hp EUVL production requirements and beyond.

Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers

NASA Astrophysics Data System (ADS)

Larivière, Stéphane; Wilson, Christopher J.; Kutrzeba Kotowska, Bogumila; Versluijs, Janko; Decoster, Stefan; Mao, Ming; van der Veen, Marleen H.; Jourdan, Nicolas; El-Mekki, Zaid; Heylen, Nancy; Kesters, Els; Verdonck, Patrick; Béral, Christophe; Van den Heuvel, Dieter; De Bisschop, Peter; Bekaert, Joost; Blanco, Victor; Ciofi, Ivan; Wan, Danny; Briggs, Basoene; Mallik, Arindam; Hendrickx, Eric; Kim, Ryoung-han; McIntyre, Greg; Ronse, Kurt; Bömmels, Jürgen; Tőkei, Zsolt; Mocuta, Dan

2018-03-01

The semiconductor scaling roadmap shows the continuous node to node scaling to push Moore's law down to the next generations. In that context, the foundry N5 node requires 32nm metal pitch interconnects for the advanced logic Back- End of Line (BEoL). 193immersion usage now requires self-aligned and/or multiple patterning technique combinations to enable such critical dimension. On the other hand, EUV insertion investigation shows that 32nm metal pitch is still a challenge but, related to process flow complexity, presents some clear motivations. Imec has already evaluated on test chip vehicles with different patterning approaches: 193i SAQP (Self-Aligned Quadruple Patterning), LE3 (triple patterning Litho Etch), tone inversion, EUV SE (Single Exposure) with SMO (Source-mask optimization). Following the run path in the technology development for EUV insertion, imec N7 platform (iN7, corresponding node to the foundry N5) is developed for those BEoL layers. In this paper, following technical motivation and development learning, a comparison between the iArF SAQP/EUV block hybrid integration scheme and a single patterning EUV flow is proposed. These two integration patterning options will be finally compared from current morphological and electrical criteria.

Clean induced feature CD shift of EUV mask

NASA Astrophysics Data System (ADS)

Nesládek, Pavel; Schedel, Thorsten; Bender, Markus

2016-05-01

EUV developed in the last decade to the most promising <7nm technology candidate. Defects are considered to be one of the most critical issues of the EUV mask. There are several contributors which make the EUV mask so different from the optical one. First one is the significantly more complicated mask stack consisting currently of 40 Mo/Si double layers, covered by Ru capping layer and TaN/TaO absorber/anti-reflective coating on top of the front face of the mask. Backside is in contrary to optical mask covered as well by conductive layer consisting of Cr or CrN. Second contributor is the fact that EUV mask is currently in contrary to optical mask not yet equipped with sealed pellicle, leading to much higher risk of mask contamination. Third reason is use of EUV mask in vacuum, possibly leading to deposition of vacuum contaminants on the EUV mask surface. Latter reason in combination with tight requirements on backside cleanliness lead to the request of frequent recleaning of the EUV mask, in order to sustain mask lifetime similar to that of optical mask. Mask cleaning process alters slightly the surface of any mask - binary COG mask, as well as phase shift mask of any type and naturally also of the EUV mask as well. In case of optical masks the changes are almost negligible, as the mask is exposed to max. 10-20 re-cleans within its life time. These modifications can be expressed in terms of different specified parameters, e.g. CD shift, phase/trans shift, change of the surface roughness etc. The CD shift, expressed as thinning (or exceptionally thickening) of the dark features on the mask is typically in order of magnitude 0.1nm per process run, which is completely acceptable for optical mask. Projected on the lifetime of EUV mask, assuming 100 clean process cycles, this will lead to CD change of about 10nm. For this reason the requirements for EUV mask cleaning are significantly tighter, << 0.1 nm per process run. This task will look even more challenging, when considering, that the tools for CD measurement at the EUV mask are identical as for optical mask. There is one aspect influencing the CD shift, which demands attention. The mask composition of the EUV mask is significantly different from the optical mask. More precisely there are 2 materials influencing the estimated CD in case of EUV mask, whereas there is one material only in case of optical masks, in first approximation. For optical masks, the CD changes can be attributed to modification of the absorber/ARC layer, as the quartz substrate can be hardly modified by the wet process. For EUV Masks chemical modification of the Ru capping layer - thinning, oxidization etc. are rather more probable and we need to take into account, how this effects can influence the CD measurement process. CD changes measured can be interpreted as either change in the feature size, or modification of the chemical nature of both absorber/ARC layer stack and the Ru capping layer. In our work we try to separate the effect of absorber and Ru/capping layer on the CD shift observed and propose independent way of estimation both parameters.

Stray light in cone beam optical computed tomography: I. Measurement and reduction strategies with planar diffuse source

NASA Astrophysics Data System (ADS)

Granton, Patrick V.; Dekker, Kurtis H.; Battista, Jerry J.; Jordan, Kevin J.

2016-04-01

Optical cone-beam computed tomographic (CBCT) scanning of 3D radiochromic dosimeters may provide a practical method for 3D dose verification in radiation therapy. However, in cone-beam geometry stray light contaminates the projection images, degrading the accuracy of reconstructed linear attenuation coefficients. Stray light was measured using a beam pass aperture array (BPA) and structured illumination methods. The stray-to-primary ray ratio (SPR) along the central axis was found to be 0.24 for a 5% gelatin hydrogel, representative of radiochromic hydrogels. The scanner was modified by moving the spectral filter from the detector to the source, changing the light’s spatial fluence pattern and lowering the acceptance angle by extending distance between the source and object. These modifications reduced the SPR significantly from 0.24 to 0.06. The accuracy of the reconstructed linear attenuation coefficients for uniform carbon black liquids was compared to independent spectrometer measurements. Reducing the stray light increased the range of accurate transmission readings. In order to evaluate scanner performance for the more challenging application to small field dosimetry, a carbon black finger gel phantom was prepared. Reconstructions of the phantom from CBCT and fan-beam CT scans were compared. The modified source resulted in improved agreement. Subtraction of residual stray light, measured with BPA or structured illumination from each projection further improved agreement. Structured illumination was superior to BPA for measuring stray light for the smaller 1.2 and 0.5 cm diameter phantom fingers. At the costs of doubling the scanner size and tripling the number of scans, CBCT reconstructions of low-scattering hydrogel dosimeters agreed with those of fan-beam CT scans.

Instrumentation and method for measuring NIR light absorbed in tissue during MR imaging in medical NIRS measurements

NASA Astrophysics Data System (ADS)

Myllylä, Teemu S.; Sorvoja, Hannu S. S.; Nikkinen, Juha; Tervonen, Osmo; Kiviniemi, Vesa; Myllylä, Risto A.

2011-07-01

Our goal is to provide a cost-effective method for examining human tissue, particularly the brain, by the simultaneous use of functional magnetic resonance imaging (fMRI) and near-infrared spectroscopy (NIRS). Due to its compatibility requirements, MRI poses a demanding challenge for NIRS measurements. This paper focuses particularly on presenting the instrumentation and a method for the non-invasive measurement of NIR light absorbed in human tissue during MR imaging. One practical method to avoid disturbances in MR imaging involves using long fibre bundles to enable conducting the measurements at some distance from the MRI scanner. This setup serves in fact a dual purpose, since also the NIRS device will be less disturbed by the MRI scanner. However, measurements based on long fibre bundles suffer from light attenuation. Furthermore, because one of our primary goals was to make the measuring method as cost-effective as possible, we used high-power light emitting diodes instead of more expensive lasers. The use of LEDs, however, limits the maximum output power which can be extracted to illuminate the tissue. To meet these requirements, we improved methods of emitting light sufficiently deep into tissue. We also show how to measure NIR light of a very small power level that scatters from the tissue in the MRI environment, which is characterized by strong electromagnetic interference. In this paper, we present the implemented instrumentation and measuring method and report on test measurements conducted during MRI scanning. These measurements were performed in MRI operating rooms housing 1.5 Tesla-strength closed MRI scanners (manufactured by GE) in the Dept. of Diagnostic Radiology at the Oulu University Hospital.

Quantitative quality assurance in a multicenter HARDI clinical trial at 3T.

PubMed

Zhou, Xiaopeng; Sakaie, Ken E; Debbins, Josef P; Kirsch, John E; Tatsuoka, Curtis; Fox, Robert J; Lowe, Mark J

2017-01-01

A phantom-based quality assurance (QA) protocol was developed for a multicenter clinical trial including high angular resolution diffusion imaging (HARDI). A total of 27 3T MR scanners from 2 major manufacturers, GE (Discovery and Signa scanners) and Siemens (Trio and Skyra scanners), were included in this trial. With this protocol, agar phantoms doped to mimic relaxation properties of brain tissue are scanned on a monthly basis, and quantitative procedures are used to detect spiking and to evaluate eddy current and Nyquist ghosting artifacts. In this study, simulations were used to determine alarm thresholds for minimal acceptable signal-to-noise ratio (SNR). Our results showed that spiking artifact was the most frequently observed type of artifact. Overall, Trio scanners exhibited less eddy current distortion than GE scanners, which in turn showed less distortion than Skyra scanners. This difference was mainly caused by the different sequences used on these scanners. The SNR for phantom scans was closely correlated with the SNR from volunteers. Nearly all of the phantom measurements with artifact-free images were above the alarm threshold, suggesting that the scanners are stable longitudinally. Software upgrades and hardware replacement sometimes affected SNR substantially but sometimes did not. In light of these results, it is important to monitor longitudinal SNR with phantom QA to help interpret potential effects on in vivo measurements. Our phantom QA procedure for HARDI scans was successful in tracking scanner performance and detecting unwanted artifacts. Copyright © 2016 Elsevier Inc. All rights reserved.

Quantitative Quality Assurance in a Multicenter HARDI Clinical Trial at 3T

PubMed Central

Zhou, Xiaopeng; Sakaie, Ken E.; Debbins, Josef P.; Kirsch, John E.; Tatsuoka, Curtis; Fox, Robert J.; Lowe, Mark J.

2016-01-01

A phantom-based quality assurance (QA) protocol was developed for a multicenter clinical trial including high angular resolution diffusion imaging (HARDI). A total of 27 3T MR scanners from 2 major manufacturers, GE (Discovery and Signa scanners) and Siemens (Trio and Skyra scanners), were included in this trial. With this protocol, agar phantoms doped to mimic relaxation properties of brain tissue are scanned on a monthly basis, and quantitative procedures are used to detect spiking and to evaluate eddy current and Nyquist ghosting artifacts. In this study, simulations were used to determine alarm thresholds for minimal acceptable signal-to-noise ratio (SNR). Our results showed that spiking artifact was the most frequently observed type of artifact. Overall, Trio scanners exhibited less eddy current distortion than GE scanners, which in turn showed less distortion than Skyra scanners. This difference was mainly caused by the different sequences used on these scanners. The SNR for phantom scans was closely correlated with the SNR from volunteers. Nearly all of the phantom measurements with artifact-free images were above the alarm threshold, suggesting that the scanners are stable longitudinally. Software upgrades and hardware replacement sometimes affected SNR substantially but sometimes did not. In light of these results, it is important to monitor longitudinal SNR with phantom QA to help interpret potential effects on in vivo measurements. Our phantom QA procedure for HARDI scans was successful in tracking scanner performance and detecting unwanted artifacts. PMID:27587227

High-tech breakthrough DNA scanner for reading sequence and detecting gene mutation: A powerful 1 lb, 20 {mu}m resolution, 16-bit personal scanner (PS) that scans 17inch x 14inch x-ray film in 48 s, with laser, uv and white light sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeineh, J.A.; Zeineh, M.M.; Zeineh, R.A.

1993-06-01

The 17inch x 14inch X-ray film, gels, and blots are widely used in DNA research. However, DNA laser scanners are costly and unaffordable for the majority of surveyed biotech scientists who need it. The high-tech breakthrough analytical personal scanner (PS) presented in this report is an inexpensive 1 lb hand-held scanner priced at 2-4% of the bulky and costly 30-95 lb conventional laser scanners. This PS scanner is affordable from an operation budget and biotechnologists, who originate most science breakthroughs, can acquire it to enhance their speed, accuracy, and productivity. Compared to conventional laser scanners that are currently available onlymore » through hard-to-get capital-equipment budgets, the new PS scanner offers improved spatial resolution of 20 {mu}m, higher speed (scan up to 17inch x 14inch molecular X-ray film in 48 s), 1-32,768 gray levels (16-bits), student routines, versatility, and, most important, affordability. Its programs image the film, read DNA sequences automatically, and detect gene mutation. In parallel to the wide laboratory use of PC computers instead of mainframes, this PS scanner might become an integral part of a PC-PS powerful and cost-effective system where the PS performs the digital imaging and the PC acts on the data.« less

Biochip scanner device

DOEpatents

Perov, Alexander; Belgovskiy, Alexander I.; Mirzabekov, Andrei D.

2001-01-01

A biochip scanner device used to detect and acquire fluorescence signal data from biological microchips or biochips and method of use are provided. The biochip scanner device includes a laser for emitting a laser beam. A modulator, such as an optical chopper modulates the laser beam. A scanning head receives the modulated laser beam and a scanning mechanics coupled to the scanning head moves the scanning head relative to the biochip. An optical fiber delivers the modulated laser beam to the scanning head. The scanning head collects the fluorescence light from the biochip, launches it into the same optical fiber, which delivers the fluorescence into a photodetector, such as a photodiode. The biochip scanner device is used in a row scanning method to scan selected rows of the biochip with the laser beam size matching the size of the immobilization site.

Progress in coherent lithography using table-top extreme ultraviolet lasers

NASA Astrophysics Data System (ADS)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography.

EUV and Magnetic Activities Associated with Type-I Solar Radio Bursts

NASA Astrophysics Data System (ADS)

Li, C. Y.; Chen, Y.; Wang, B.; Ruan, G. P.; Feng, S. W.; Du, G. H.; Kong, X. L.

2017-06-01

Type-I bursts ( i.e. noise storms) are the earliest-known type of solar radio emission at the meter wavelength. They are believed to be excited by non-thermal energetic electrons accelerated in the corona. The underlying dynamic process and exact emission mechanism still remain unresolved. Here, with a combined analysis of extreme ultraviolet (EUV), radio and photospheric magnetic field data of unprecedented quality recorded during a type-I storm on 30 July 2011, we identify a good correlation between the radio bursts and the co-spatial EUV and magnetic activities. The EUV activities manifest themselves as three major brightening stripes above a region adjacent to a compact sunspot, while the magnetic field there presents multiple moving magnetic features (MMFs) with persistent coalescence or cancelation and a morphologically similar three-part distribution. We find that the type-I intensities are correlated with those of the EUV emissions at various wavelengths with a correlation coefficient of 0.7 - 0.8. In addition, in the region between the brightening EUV stripes and the radio sources there appear consistent dynamic motions with a series of bi-directional flows, suggesting ongoing small-scale reconnection there. Mainly based on the induced connection between the magnetic motion at the photosphere and the EUV and radio activities in the corona, we suggest that the observed type-I noise storms and the EUV brightening activities are the consequence of small-scale magnetic reconnection driven by MMFs. This is in support of the original proposal made by Bentley et al. ( Solar Phys. 193, 227, 2000).

EUV efficiency of a 6000-grooves per mm diffraction grating

NASA Technical Reports Server (NTRS)

Hurwitz, Mark; Bowyer, Stuart; Edelstein, Jerry; Harada, Tatsuo; Kita, Toshiaki

1990-01-01

In order to explore whether grooves ruled mechanically at a density of 6000 per mm can perform well at EUV wavelengths, a sample grating is measured with this density in an EUV calibration facility. Measurements are presented of the planar uniform line-space diffraction grating's efficiency and large-angle scattering.

A study of EUV emission from the O4f star Zeta Puppis

NASA Technical Reports Server (NTRS)

Waldron, Wayne L.; Vallerga, John

1995-01-01

Our 20 ks observation did not allow us to carry out our primary objective, i.e., to test the limitations of deeply embedded EUV and X-ray sources. However, it did provide a very useful constraint in our analysis of a newly acquired high S/N ROSAT PSPC X-ray spectrum of Zeta Pup. In addition, modifications to our stellar wind opacity code have been preformed to investigate the sensitivity of the EUV opacity energy range to different photospheric model flux inputs and different wind structures. These analyses provided the justification for a 140 ks follow up EUVE Cycle III observation of this star. We have recently been informed that our requested observation has been accepted as a Type 1 target for Cycle III. The remainder of this report focuses on the following: (1) a brief background on the status of X-ray emission from OB stars; (2) a discussion on the importance of EUV observations; (3) a discussion of our scientific objectives; and (4) a summary of our technical approach for our Cycle III observation (including the predicted EUV counts for various lines.)

Correlation of experimentally measured atomic scale properties of EUV photoresist to modeling performance: an exploration

NASA Astrophysics Data System (ADS)

Kandel, Yudhishthir; Chandonait, Jonathan; Melvin, Lawrence S.; Marokkey, Sajan; Yan, Qiliang; Grzeskowiak, Steven; Painter, Benjamin; Denbeaux, Gregory

2017-03-01

Extreme ultraviolet (EUV) lithography at 13.5 nm stands at the crossroads of next generation patterning technology for high volume manufacturing of integrated circuits. Photo resist models that form the part of overall pattern transform model for lithography play a vital role in supporting this effort. The physics and chemistry of these resists must be understood to enable the construction of accurate models for EUV Optical Proximity Correction (OPC). In this study, we explore the possibility of improving EUV photo-resist models by directly correlating the parameters obtained from experimentally measured atomic scale physical properties; namely, the effect of interaction of EUV photons with photo acid generators in standard chemically amplified EUV photoresist, and associated electron energy loss events. Atomic scale physical properties will be inferred from the measurements carried out in Electron Resist Interaction Chamber (ERIC). This study will use measured physical parameters to establish a relationship with lithographically important properties, such as line edge roughness and CD variation. The data gathered from these measurements is used to construct OPC models of the resist.

Availability of underlayer application to EUV process

NASA Astrophysics Data System (ADS)

Kosugi, Hitoshi; Fonseca, Carlos; Iwao, Fumiko; Marumoto, Hiroshi; Kim, Hyun-Woo; Cho, Kyoungyong; Park, Cheol-Hong; Park, Chang-Min; Na, Hai-Sub; Koh, Cha-Won; Cho, Hanku

2011-04-01

EUV lithography is one of the most promising technologies for the fabrication of beyond 30nm HP generation devices. However, it is well-known that EUV lithography still has significant challenges. A great concern is the change of resist material for EUV resist process. EUV resist material formulations will likely change from conventional-type materials. As a result, substrate dependency needs to be understood. TEL has reported that the simulation combined with experiments is a good way to confirm the substrate dependency. In this work the application of HMDS treatment and SiON introduction, as an underlayer, are studied to cause a footing of resist profile. Then, we applied this simulation technique to Samsung EUV process. We will report the benefit of this simulation work and effect of underlayer application. Regarding the etching process, underlayer film introduction could have significant issues because the film that should be etched off increases. For that purpose, thinner films are better for etching. In general, thinner films may have some coating defects. We will report the coating coverage performance and defectivity of ultra thin film coating.

Comparative calibration of IP scanning equipment

NASA Astrophysics Data System (ADS)

Ingenito, F.; Andreoli, P.; Batani, D.; Boutoux, G.; Cipriani, M.; Consoli, F.; Cristofari, G.; Curcio, A.; De Angelis, R.; Di Giorgio, G.; Ducret, J.; Forestier-Colleoni, P.; Hulin, S.; Jakubowska, K.; Rabhi, N.

2016-05-01

Imaging Plates (IP) are diagnostic devices which contain a photostimulable phosphor layer that stores the incident radiation dose as a latent image. The image is read with a scanner which stimulates the decay of electrons, previously excited by the incident radiation, by exposition to a laser beam. This results in emitted light, which is detected by photomultiplier tubes; so the latent image is reconstructed. IPs have the interesting feature that can be reused many times, after erasing stored information. Algorithms to convert signals stored in the detector to Photostimulated luminescence (PSL) counts depend on the scanner and are not available on every model. A comparative cross-calibration of the IP scanner Dürr CR35 BIO, used in ABC laboratory, was performed, using the Fujifilm FLA 7000 scanner as a reference, to find the equivalence between grey-scale values given by the Dürr scanner to PSL counts. Using an IP and a 55Fe β-source, we produced pairs of samples with the same exposition times, which were analysed by both scanners, placing particular attention to fading times of the image stored on IPs. Data analysis led us to the determine a conversion formula which can be used to compare data of experiments obtained in different laboratories and to use IP calibrations available, till now, only for Fujifilm scanners.

The EUVE Proposal Database

NASA Astrophysics Data System (ADS)

Christian, C. A.; Olson, E. C.

1993-01-01

The proposal database and scheduling system for the Extreme Ultraviolet Explorer is described. The proposal database has been implemented to take input for approved observations selected by the EUVE Peer Review Panel and output target information suitable for the scheduling system to digest. The scheduling system is a hybrid of the SPIKE program and EUVE software which checks spacecraft constraints, produces a proposed schedule and selects spacecraft orientations with optimal configurations for acquiring star trackers, etc. This system is used to schedule the In Orbit Calibration activities that took place this summer, following the EUVE launch in early June 1992. The strategy we have implemented has implications for the selection of approved targets, which have impacted the Peer Review process. In addition, we will discuss how the proposal database, founded on Sybase, controls the processing of EUVE Guest Observer data.

Spectroscopy and Photometry of EUVE J1429-38.0:An Eclipsing Magnetic Cataclysmic Variable

NASA Astrophysics Data System (ADS)

Howell, Steve B.; Craig, Nahide; Roberts, Bryce; McGee, Paddy; Sirk, Martin

1997-06-01

EUVE J1429-38.0 was originally discovered as a variable source by the Extreme Ultraviolet Explorer (EUVE) satellite. We present new optical observations which unambiguously confirm this star to be an eclipsing magnetic system with an orbital period of 4() h 46() m. The photometric data are strongly modulated by ellipsoidal variations during low states which allow a system inclination of near 80 degrees to be determined. Our time-resolved optical spectra, which cover only about one-third of the orbital cycle, indicate the clear presence of a gas stream. During high states, EUVE J1429-38.0 shows ~ 1 mag deep eclipses and the apparent formation of a partial accretion disk. EUVE J1429-38.0 presents the observer with properties of both the AM Herculis and the DQ Herculis types of magnetic cataclysmic variable.

EUV Irradiance Inputs to Thermospheric Density Models: Open Issues and Path Forward

NASA Astrophysics Data System (ADS)

Vourlidas, A.; Bruinsma, S.

2018-01-01

One of the objectives of the NASA Living With a Star Institute on "Nowcasting of Atmospheric Drag for low Earth orbit (LEO) Spacecraft" was to investigate whether and how to increase the accuracy of atmospheric drag models by improving the quality of the solar forcing inputs, namely, extreme ultraviolet (EUV) irradiance information. In this focused review, we examine the status of and issues with EUV measurements and proxies, discuss recent promising developments, and suggest a number of ways to improve the reliability, availability, and forecast accuracy of EUV measurements in the next solar cycle.

Carbon contamination topography analysis of EUV masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Y.-J.; Yankulin, L.; Thomas, P.

2010-03-12

The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

TH-CD-201-05: Characterization of a Novel Light-Collimating Tank Optical-CT System for 3D Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miles, D; Yoon, S; Adamovics, J

Purpose: Comprehensive 3D dosimetry is highly desirable for advanced clinical QA, but costly optical readout techniques have hindered widespread implementation. Here, we present the first results from a cost-effective Integrated-lens Dry-tank Optical Scanner (IDOS), designed for convenient 3D dosimetry readout of radiochromic plastic dosimeters (e.g. PRESAGE). Methods: The scanner incorporates a novel transparent light-collimating tank, which collimates a point light source into parallel-ray CT geometry. The tank was designed using an in-house Monte-Carlo optical ray-tracing simulation, and was cast in polyurethane using a 3D printed mould. IDOS spatial accuracy was evaluated by imaging a set of custom optical phantoms, withmore » comparison to x-ray CT images. IDOS dose measurement performance was assessed by imaging PRESAGE dosimeters irradiated with simple known dose distributions (e.g., 4 field box 6MV treatment with Varian Linac). Direct comparisons were made to images from our gold standard DLOS scanner and calculated dose distributions from a commissioned Eclipse planning system. Results: All optical CT images were reconstructed at 1mm isotropic resolution. Comparison of IDOS and x-ray CT images of the geometric phantom demonstrated excellent IDOS geometric accuracy (sub-mm) throughout the dosimeter. IDOS measured 3D dose distribution agreed well with prediction from Eclipse, with 95% gamma pass rate at 3%/3mm. Cross-scanner dose measurement gamma analysis shows >90% of pixels passing at 3%/3mm. Conclusion: The first prototype of the IDOS system has demonstrated promising performance, with accurate dosimeter readout and negligible spatial distortion. The use of optical simulations and 3D printing to create a light collimating-tank has dramatically increased convenience and reduced costs by removing the need for expensive lenses and large volumes of refractive matching fluids.« less

Ultra-compact imaging plate scanner module using a MEMS mirror and specially designed MPPC

NASA Astrophysics Data System (ADS)

Miyamoto, Yuichi; Sasaki, Kensuke; Takasaka, Masaomi; Fujimoto, Masatoshi; Yamamoto, Koei

2017-02-01

Computed radiography (CR), which is one of the most useful methods for dental imaging and nondestructive testing, uses a phosphor imaging plate (IP) because it is flexible, reusable, and inexpensive. Conventional IP scanners utilize a galvanometer or a polygon mirror as a scanning device and a photomultiplier as an optical sensor. Microelectromechanical systems (MEMS) technology currently provides silicon-based devices and has the potential to replace such discrete devices and sensors. Using these devices, we constructed an ultra-compact IP scanner. Our extremely compact plate scanner utilizes a module that is composed of a one-dimensional MEMS mirror and a long multi-pixel photon counter (MPPC) that is combined with a specially designed wavelength filter and a rod lens. The MEMS mirror, which is a non-resonant electromagnetic type, is 2.6 mm in diameter with a recommended optical scanning angle up to +/-15°. The CR's wide dynamic range is maintained using a newly developed MPPC. The MPPC is a sort of silicon photomultiplier and is a high-sensitivity photon-counting device. To achieve such a wide dynamic range, we developed a long MPPC that has over 10,000 pixels. For size reduction and high optical efficiency, we set the MPPC close to an IP across the rod lens. To prevent the MPPC from detecting excitation light, which is much more intense than photo-stimulated light, we produced a sharp-cut wavelength filter that has a wide angle (+/-60°) of tolerance. We evaluated our constructed scanner module through gray chart and resolution chart images.

Digging for Fossils in the Hertzsprung Gap

NASA Technical Reports Server (NTRS)

Ayres, Thomas R.

1999-01-01

Objective was to conduct deep (approx. 250 ks) pointings on two EUV sources, the early-F giant beta Cas and the mid-G giant mu Velorum; to obtain spectra in the range 70-300 A and to record Deep Survey light curves over the extensive duration of each observation. We have analyzed the DS lightcurve and the SW spectrum, breaking the latter lip into time slices corresponding to key phases of the observation: pre-flare, flare rise, and two segments of the flare decay.

SDO/AIA AND HINODE/EIS OBSERVATIONS OF INTERACTION BETWEEN AN EUV WAVE AND ACTIVE REGION LOOPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Liheng; Zhang, Jun; Li, Ting

2013-09-20

We present detailed analysis of an extreme-ultraviolet (EUV) wave and its interaction with active region (AR) loops observed by the Solar Dynamics Observatory/Atmospheric Imaging Assembly and the Hinode EUV Imaging Spectrometer (EIS). This wave was initiated from AR 11261 on 2011 August 4 and propagated at velocities of 430-910 km s{sup –1}. It was observed to traverse another AR and cross over a filament channel on its path. The EUV wave perturbed neighboring AR loops and excited a disturbance that propagated toward the footpoints of these loops. EIS observations of AR loops revealed that at the time of the wavemore » transit, the original redshift increased by about 3 km s{sup –1}, while the original blueshift decreased slightly. After the wave transit, these changes were reversed. When the EUV wave arrived at the boundary of a polar coronal hole, two reflected waves were successively produced and part of them propagated above the solar limb. The first reflected wave above the solar limb encountered a large-scale loop system on its path, and a secondary wave rapidly emerged 144 Mm ahead of it at a higher speed. These findings can be explained in the framework of a fast-mode magnetosonic wave interpretation for EUV waves, in which observed EUV waves are generated by expanding coronal mass ejections.« less

Kr photoionized plasma induced by intense extreme ultraviolet pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bartnik, A., E-mail: andrzej.bartnik@wat.edu.pl; Wachulak, P.; Fiedorowicz, H.

Irradiation of any gas with an intense EUV (extreme ultraviolet) radiation beam can result in creation of photoionized plasmas. The parameters of such plasmas can be significantly different when compared with those of the laser produced plasmas (LPP) or discharge plasmas. In this work, the photoionized plasmas were created in a krypton gas irradiated using an LPP EUV source operating at a 10 Hz repetition rate. The Kr gas was injected into the vacuum chamber synchronously with the EUV radiation pulses. The EUV beam was focused onto a Kr gas stream using an axisymmetrical ellipsoidal collector. The resulting low temperature Krmore » plasmas emitted electromagnetic radiation in the wide spectral range. The emission spectra were measured either in the EUV or an optical range. The EUV spectrum was dominated by emission lines originating from Kr III and Kr IV ions, and the UV/VIS spectra were composed from Kr II and Kr I lines. The spectral lines recorded in EUV, UV, and VIS ranges were used for the construction of Boltzmann plots to be used for the estimation of the electron temperature. It was shown that for the lowest Kr III and Kr IV levels, the local thermodynamic equilibrium (LTE) conditions were not fulfilled. The electron temperature was thus estimated based on Kr II and Kr I species where the partial LTE conditions could be expected.« less

Kr photoionized plasma induced by intense extreme ultraviolet pulses

NASA Astrophysics Data System (ADS)

Bartnik, A.; Wachulak, P.; Fiedorowicz, H.; Skrzeczanowski, W.

2016-04-01

Irradiation of any gas with an intense EUV (extreme ultraviolet) radiation beam can result in creation of photoionized plasmas. The parameters of such plasmas can be significantly different when compared with those of the laser produced plasmas (LPP) or discharge plasmas. In this work, the photoionized plasmas were created in a krypton gas irradiated using an LPP EUV source operating at a 10 Hz repetition rate. The Kr gas was injected into the vacuum chamber synchronously with the EUV radiation pulses. The EUV beam was focused onto a Kr gas stream using an axisymmetrical ellipsoidal collector. The resulting low temperature Kr plasmas emitted electromagnetic radiation in the wide spectral range. The emission spectra were measured either in the EUV or an optical range. The EUV spectrum was dominated by emission lines originating from Kr III and Kr IV ions, and the UV/VIS spectra were composed from Kr II and Kr I lines. The spectral lines recorded in EUV, UV, and VIS ranges were used for the construction of Boltzmann plots to be used for the estimation of the electron temperature. It was shown that for the lowest Kr III and Kr IV levels, the local thermodynamic equilibrium (LTE) conditions were not fulfilled. The electron temperature was thus estimated based on Kr II and Kr I species where the partial LTE conditions could be expected.

Effects of sitting versus standing and scanner type on cashiers.

PubMed

Lehman, K R; Psihogios, J P; Meulenbroek, R G

2001-06-10

In the retail supermarket industry where cashiers perform repetitive, light manual material-handling tasks when scanning and handling products, reports of musculoskeletal disorders and discomfort are high. Ergonomics tradeoffs exist between sitting and standing postures, which are further confounded by the checkstand design and point-of-sale technology, such as the scanner. A laboratory experiment study was conducted to understand the effects of working position (sitting versus standing) and scanner type (bi-optic versus single window) on muscle activity, upper limb and spinal posture, and subjective preference of cashiers. Ten cashiers from a Dutch retailer participated in the study. Cashiers exhibited lower muscle activity in the neck and shoulders when standing and using a bi-optic scanner. Shoulder abduction was also less for standing conditions. In addition, all cashiers preferred using the bi-optic scanner with mixed preferences for sitting (n = 6) and standing (n = 4). Static loading of the muscles was relatively high compared with benchmarks, suggesting that during the task of scanning, cashiers may not have adequate recovery time to prevent fatigue. It is recommended that retailers integrate bi-optic scanners into standing checkstands to minimize postural stress, fatigue and discomfort in cashiers.

EUV mirror based absolute incident flux detector

DOEpatents

Berger, Kurt W.

2004-03-23

A device for the in-situ monitoring of EUV radiation flux includes an integrated reflective multilayer stack. This device operates on the principle that a finite amount of in-band EUV radiation is transmitted through the entire multilayer stack. This device offers improvements over existing vacuum photo-detector devices since its calibration does not change with surface contamination.

Calibration techniques and results in the soft X-ray and extreme ultraviolet for components of the Extreme Ultraviolet Explorer Satellite

NASA Technical Reports Server (NTRS)

Malina, Roger F.; Jelinsky, Patrick; Bowyer, Stuart

1986-01-01

The calibration facilities and techniques for the Extreme Ultraviolet Explorer (EUVE) from 44 to 2500 A are described. Key elements include newly designed radiation sources and a collimated monochromatic EUV beam. Sample results for the calibration of the EUVE filters, detectors, gratings, collimators, and optics are summarized.

Extragalactic background light measurements and applications.

PubMed

Cooray, Asantha

2016-03-01

This review covers the measurements related to the extragalactic background light intensity from γ-rays to radio in the electromagnetic spectrum over 20 decades in wavelength. The cosmic microwave background (CMB) remains the best measured spectrum with an accuracy better than 1%. The measurements related to the cosmic optical background (COB), centred at 1 μm, are impacted by the large zodiacal light associated with interplanetary dust in the inner Solar System. The best measurements of COB come from an indirect technique involving γ-ray spectra of bright blazars with an absorption feature resulting from pair-production off of COB photons. The cosmic infrared background (CIB) peaking at around 100 μm established an energetically important background with an intensity comparable to the optical background. This discovery paved the way for large aperture far-infrared and sub-millimetre observations resulting in the discovery of dusty, starbursting galaxies. Their role in galaxy formation and evolution remains an active area of research in modern-day astrophysics. The extreme UV (EUV) background remains mostly unexplored and will be a challenge to measure due to the high Galactic background and absorption of extragalactic photons by the intergalactic medium at these EUV/soft X-ray energies. We also summarize our understanding of the spatial anisotropies and angular power spectra of intensity fluctuations. We motivate a precise direct measurement of the COB between 0.1 and 5 μm using a small aperture telescope observing either from the outer Solar System, at distances of 5 AU or more, or out of the ecliptic plane. Other future applications include improving our understanding of the background at TeV energies and spectral distortions of CMB and CIB.

Extragalactic background light measurements and applications

PubMed Central

Cooray, Asantha

2016-01-01

This review covers the measurements related to the extragalactic background light intensity from γ-rays to radio in the electromagnetic spectrum over 20 decades in wavelength. The cosmic microwave background (CMB) remains the best measured spectrum with an accuracy better than 1%. The measurements related to the cosmic optical background (COB), centred at 1 μm, are impacted by the large zodiacal light associated with interplanetary dust in the inner Solar System. The best measurements of COB come from an indirect technique involving γ-ray spectra of bright blazars with an absorption feature resulting from pair-production off of COB photons. The cosmic infrared background (CIB) peaking at around 100 μm established an energetically important background with an intensity comparable to the optical background. This discovery paved the way for large aperture far-infrared and sub-millimetre observations resulting in the discovery of dusty, starbursting galaxies. Their role in galaxy formation and evolution remains an active area of research in modern-day astrophysics. The extreme UV (EUV) background remains mostly unexplored and will be a challenge to measure due to the high Galactic background and absorption of extragalactic photons by the intergalactic medium at these EUV/soft X-ray energies. We also summarize our understanding of the spatial anisotropies and angular power spectra of intensity fluctuations. We motivate a precise direct measurement of the COB between 0.1 and 5 μm using a small aperture telescope observing either from the outer Solar System, at distances of 5 AU or more, or out of the ecliptic plane. Other future applications include improving our understanding of the background at TeV energies and spectral distortions of CMB and CIB. PMID:27069645

Exploring EUV Spicules Using 304 Angstrom He II Data from SDO AIA

NASA Technical Reports Server (NTRS)

Snyder, Ian R.; Sterling, Alphonse C.; Falconer, David A.; Moore, Ron L.

2014-01-01

We present results from a statistical study of He II 304 Angstrom Extreme Ultraviolet (EUV) spicules at the limb of the Sun. We also measured properties of one macrospicule; macrospicules are longer than most spicules, and much broader in width than spicules. We use high-cadence (12 second) and high-resolution (0.6 arcseconds pixels) resolution data from the Atmospheric Imaging Array (AIA) instrument on the Solar Dynamic Observatory (SDO). All of the observed events occurred near the solar north pole, where quiet Sun or coronal hole environments ensued. We examined the maximum lengths, maximum rise velocities, and lifetimes of 33 Extreme Ultraviolet (EUV) spicules and the macrospicule. For the bulk of the Extreme Ultraviolet (EUV) spicules these quantities are, respectively, approximately 10,000-40,000 kilometers, 20-100 kilometers per second, and approximately 100- approximately 1000 seconds. For the macrospicule the corresponding quantities were respectively approximately 60,000 kilometers, approximately 130 kilometers per second, approximately 1800 seconds, which is typical of macrospicules measured by other workers. Therefore macrospicules are taller, longer-lived, and faster than most Extreme Ultraviolet (EUV) spicules. The rise profiles of both the spicules and the macrospicules match well a second-order ("parabolic" ) trajectory, although the acceleration was often weaker than that of solar gravity in the profiles fitted to the trajectories. Our macrospicule also had an obvious brightening at its base at birth, while such brightening was not apparent for the Extreme Ultraviolet (EUV) spicules. Most of the Extreme Ultraviolet (EUV) spicules remained visible during their descent back to the solar surface, although a small percentage of the spicules and the macrospicule faded out before falling back to the surface. Our sample of macrospicules is not yet large enough to determine whether their initiation mechanism is identical to that of Extreme Ultraviolet (EUV) spicules.

Evidence for a New Class of Extreme Ultraviolet Sources

NASA Technical Reports Server (NTRS)

Maoz, Dan; Ofek, Eran O.; Shemi, Amotz

1997-01-01

Most of the sources detected in the extreme ultraviolet (EUV; 100-600 A) by the ROSAT/WFC and EUVE all-sky surveys have been identified with active late-type stars and hot white dwarfs that are near enough to the Earth to escape absorption by interstellar gas. However, about 15 per cent of EUV sources are as yet unidentified with any optical counterparts. We examine whether the unidentified EUV sources may consist of the same population of late-type stars and white dwarfs. We present B and R photometry of stars in the fields of seven of the unidentified EUV sources. We detect in the optical the entire main-sequence and white dwarf population out to the greatest distances where they could still avoid absorption. We use color-magnitude diagrams to demonstrate that, in most of the fields, none of the observed stars has the colours and magnitudes of late-type dwarfs at distances less than 100 pc. Similarly, none of the observed stars is a white dwarf within 500 pc that is hot enough to be a EUV emitter. The unidentified EUV sources we study are not detected in X-rays, while cataclysmic variables, X-ray binaries, and active galactic nuclei generally are. We conclude that some of the EUV sources may be a new class of nearby objects, which are either very faint at optical bands or which mimic the colours and magnitudes of distant late-type stars or cool white dwarfs. One candidate for optically faint objects is isolated old neutron stars, slowly accreting interstellar matter. Such neutron stars are expected to be abundant in the Galaxy, and have not been unambiguously detected.

Method of fabricating reflection-mode EUV diffraction elements

DOEpatents

Naulleau, Patrick P.

2002-01-01

Techniques for fabricating a well-controlled, quantized-level, engineered surface that serves as substrates for EUV reflection multilayer overcomes problems associated with the fabrication of reflective EUV diffraction elements. The technique when employed to fabricate an EUV diffraction element that includes the steps of: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two material can provide relative etch selectivity; (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour; and (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile.

Actinic imaging and evaluation of phase structures on EUV lithography masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mochi, Iacopo; Goldberg, Kenneth; Huh, Sungmin

2010-09-28

The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and complex amplitude of structures on EUV lithography masks. Many native defects commonly found on EUV reticles are difficult to detect and review accurately because they have a strong phase component. Understanding the complex amplitude of mask features is essential for predictive modeling of defect printability and defect repair. Besides printing in a stepper, the most accurate way to characterize such defects is with actinic inspection, performed at the design, EUV wavelength. Phase defect and phase structures show a distinct through-focus behavior that enables qualitative evaluation of themore » object phase from two or more high-resolution intensity measurements. For the first time, phase of structures and defects on EUV masks were quantitatively reconstructed based on aerial image measurements, using a modified version of a phase-retrieval algorithm developed to test optical phase shifting reticles.« less

The Nature of the Flaring EUVE Companion to HD 43162

NASA Technical Reports Server (NTRS)

Kulkarni, Shrinivas R.

2005-01-01

The purpose of our program was to observe and characterize the companion to HD 43162, EUVE J0614-2354, which (serendipitously) experienced an enormous flare event during our EUVE observation of HD 43162, one of the nearby solar analogs that we observed during our survey of this population. Our observation was carried out and the data have been received and reduced. We are able to identify EUVE J0614-2354 in both the X-ray (EPIC MOS + PN) and the UV (OM) data, which provides a sub-arcsecond position for this source. Our findings are consistent with the analysis of Christian et al. (2003a,b), who identify EUVE J0614-2354 with a coronally-active M-dwarf star at distance d = 15 plus or minus 5pc. The X-ray spectrum from the EPIC data are also consistent with this identification.

Hemispherical Nature of EUV Shocks Revealed by SOHO, STEREO, and SDO Observations

NASA Technical Reports Server (NTRS)

Gopalswamy, Natchimuthuk; Nitta, N.; Akiyama, S.; Makela, P.; Yashiro, S.

2011-01-01

EUV wave transients associated with type II radio bursts are manifestation of CME-driven shocks in the solar corona. We use recent EUV wave observations from SOHO, STEREO, and SDO for a set of CMEs to show that the EUV transients have a spherical shape in the inner corona. We demonstrate this by showing that the radius of the EUV transient on the disk observed by one instrument is approximately equal to the height of the wave above the solar surface in an orthogonal view provided by another instrument. The study also shows that the CME-driven shocks often form very low in the corona at a heliocentric distance of 1.2 Rs, even smaller than the previous estimates from STEREO/CORl data (Gopalswamy et aI., 2009, Solar Phys. 259, 227). These results have important implications for the acceleration of solar energetic particles by CMEs

Determining density of maize canopy. 2: Airborne multispectral scanner data

NASA Technical Reports Server (NTRS)

Stoner, E. R.; Baumgardner, M. F.; Cipra, J. E.

1971-01-01

Multispectral scanner data were collected in two flights over a light colored soil background cover plot at an altitude of 305 m. Energy in eleven reflective wavelength band from 0.45 to 2.6 microns was recorded. Four growth stages of maize (Zea mays L.) gave a wide range of canopy densities for each flight date. Leaf area index measurements were taken from the twelve subplots and were used as a measure of canopy density. Ratio techniques were used to relate uncalibrated scanner response to leaf area index. The ratios of scanner data values for the 0.72 to 0.92 micron wavelength band over the 0.61 to 0.70 micron wavelength band were calculated for each plot. The ratios related very well to leaf area index for a given flight date. The results indicated that spectral data from maize canopies could be of value in determining canopy density.

A coherent light scanner for optical processing of large format transparencies

NASA Technical Reports Server (NTRS)

Callen, W. R.; Weaver, J. E.; Shackelford, R. G.; Walsh, J. R.

1975-01-01

A laser scanner is discussed in which the scanning beam is random-access addressable and perpendicular to the image input plane and the irradiance of the scanned beam is controlled so that a constant average irradiance is maintained after passage through the image plane. The scanner's optical system and design are described, and its performance is evaluated. It is noted that with this scanner, data in the form of large-format transparencies can be processed without the expense, space, maintenance, and precautions attendant to the operation of a high-power laser with large-aperture collimating optics. It is shown that the scanned format as well as the diameter of the scanning beam may be increased by simple design modifications and that higher scan rates can be achieved at the expense of resolution by employing acousto-optic deflectors with different relay optics.

Modeling And Simulation Of Bar Code Scanners Using Computer Aided Design Software

NASA Astrophysics Data System (ADS)

Hellekson, Ron; Campbell, Scott

1988-06-01

Many optical systems have demanding requirements to package the system in a small 3 dimensional space. The use of computer graphic tools can be a tremendous aid to the designer in analyzing the optical problems created by smaller and less costly systems. The Spectra Physics grocery store bar code scanner employs an especially complex 3 dimensional scan pattern to read bar code labels. By using a specially written program which interfaces with a computer aided design system, we have simulated many of the functions of this complex optical system. In this paper we will illustrate how a recent version of the scanner has been designed. We will discuss the use of computer graphics in the design process including interactive tweaking of the scan pattern, analysis of collected light, analysis of the scan pattern density, and analysis of the manufacturing tolerances used to build the scanner.

Complex EUV imaging reflectometry: spatially resolved 3D composition determination and dopant profiling with a tabletop 13nm source

NASA Astrophysics Data System (ADS)

Porter, Christina L.; Tanksalvala, Michael; Gerrity, Michael; Miley, Galen P.; Esashi, Yuka; Horiguchi, Naoto; Zhang, Xiaoshi; Bevis, Charles S.; Karl, Robert; Johnsen, Peter; Adams, Daniel E.; Kapteyn, Henry C.; Murnane, Margaret M.

2018-03-01

With increasingly 3D devices becoming the norm, there is a growing need in the semiconductor industry and in materials science for high spatial resolution, non-destructive metrology techniques capable of determining depth-dependent composition information on devices. We present a solution to this problem using ptychographic coherent diffractive imaging (CDI) implemented using a commercially available, tabletop 13 nm source. We present the design, simulations, and preliminary results from our new complex EUV imaging reflectometer, which uses coherent 13 nm light produced by tabletop high harmonic generation. This tool is capable of determining spatially-resolved composition vs. depth profiles for samples by recording ptychographic images at multiple incidence angles. By harnessing phase measurements, we can locally and nondestructively determine quantities such as device and thin film layer thicknesses, surface roughness, interface quality, and dopant concentration profiles. Using this advanced imaging reflectometer, we can quantitatively characterize materials-sciencerelevant and industry-relevant nanostructures for a wide variety of applications, spanning from defect and overlay metrology to the development and optimization of nano-enhanced thermoelectric or spintronic devices.

Plasma cleaning of nanoparticles from EUV mask materials by electrostatics

NASA Astrophysics Data System (ADS)

Lytle, W. M.; Raju, R.; Shin, H.; Das, C.; Neumann, M. J.; Ruzic, D. N.

2008-03-01

Particle contamination on surfaces used in extreme ultraviolet (EUV) mask blank deposition, mask fabrication, and patterned mask handling must be avoided since the contamination can create significant distortions and loss of reflectivity. Particles on the order of 10nm are problematic during MLM mirror fabrication, since the introduced defects disrupt the local Bragg planes. The most serious problem is the accumulation of particles on surfaces of patterned blanks during EUV light exposure, since > 25nm particles will be printed without an out-of-focus pellicle. Particle contaminants are also a problem with direct imprint processes since defects are printed every time. Plasma Assisted Cleaning by Electrostatics (PACE) works by utilizing a helicon plasma as well as a pulsed DC substrate bias to charge particle and repel them electrostatically from the surface. Removal of this nature is a dry cleaning method and removes contamination perpendicular from the surface instead of rolling or sweeping the particles off the surface, a benefit when cleaning patterned surfaces where contamination can be rolled or trapped between features. Also, an entire mask can be cleaned at once since the plasma can cover the entire surface, thus there is no need to focus in on an area to clean. Sophisticated particle contamination detection system utilizing high power laser called DEFCON is developed to analyze the particle removal after PACE cleaning process. PACE has shown greater than 90 % particle removal efficiencies for 30 to 220 nm PSL particles on ruthenium capped quartz. Removal results for silicon surfaces and quartz surfaces show similar removal efficiencies. Results of cleaning 80 nm PSL spheres from silicon substrates will be shown.

HOMOLOGOUS SOLAR EVENTS ON 2011 JANUARY 27: BUILD-UP AND PROPAGATION IN A COMPLEX CORONAL ENVIRONMENT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pick, M.; Démoulin, P.; Zucca, P.

2016-05-20

In spite of the wealth of imaging observations at the extreme-ultraviolet (EUV), X-ray, and radio wavelengths, there are still relatively few cases where all of the imagery is available to study the full development of a coronal mass ejection (CME) event and its associated shock. The aim of this study is to contribute to the understanding of the role of the coronal environment in the development of CMEs and the formation of shocks, and their propagation. We have analyzed the interactions of a couple of homologous CME events with ambient coronal structures. Both events were launched in a direction farmore » from the local vertical, and exhibited a radical change in their direction of propagation during their progression from the low corona into higher altitudes. Observations at EUV wavelengths from the Atmospheric Imaging Assembly instrument on board the Solar Dynamic Observatory were used to track the events in the low corona. The development of the events at higher altitudes was followed by the white-light coronagraphs on board the Solar and Heliospheric Observatory . Radio emissions produced during the development of the events were well recorded by the Nançay solar instruments. Thanks to their detection of accelerated electrons, the radio observations are an important complement to the EUV imaging. They allowed us to characterize the development of the associated shocks, and helped to unveil the physical processes behind the complex interactions between the CMEs and ambient medium (e.g., compression, reconnection).« less

EUV microexposures at the ALS using the 0.3-NA MET projectionoptics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naulleau, Patrick; Goldberg, Kenneth A.; Anderson, Erik

2005-09-01

The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure Tool (MET) optic has given rise to a new class of ultra-high resolution microexposure stations. Once such printing station has been developed and implemented at Lawrence Berkeley National Laboratory's Advanced Light Source. This flexible printing station utilizes a programmable coherence illuminator providing real-time pupil-fill control for advanced EUV resist and mask development. The Berkeley exposure system programmable illuminator enables several unique capabilities. Using dipole illumination out to {sigma}=1, the Berkeley tool supports equal-line-space printing down to 12 nm, well beyond the capabilities of similarmore » tools. Using small-sigma illumination combined with the central obscuration of the MET optic enables the system to print feature sizes that are twice as small as those coded on the mask. In this configuration, the effective 10x-demagnification for equal lines and spaces reduces the mask fabrication burden for ultra-high-resolution printing. The illuminator facilitates coherence studies such as the impact of coherence on line-edge roughness (LER) and flare. Finally the illuminator enables novel print-based aberration monitoring techniques as described elsewhere in these proceedings. Here we describe the capabilities of the new MET printing station and present system characterization results. Moreover, we present the latest printing results obtained in experimental resists. Limited by the availability of high-resolution photoresists, equal line-space printing down to 25 nm has been demonstrated as well as isolated line printing down to 29 nm with an LER of approaching 3 nm.« less

D Reconstruction-Reverse Engineering - Digital Fabrication of the Egyptian Palermo Stone Using by Smartphone and Light Structured Scanner

NASA Astrophysics Data System (ADS)

Di Paola, F.; Inzerillo, L.

2018-05-01

This paper presents a pipeline that has been developed to acquire a shape with particular features both under the geometric and radiometric aspects. In fact, the challenge was to build a 3D model of the black Stone of Palermo, where the oldest Egyptian history was printed with the use of hieroglyphs. The dark colour of the material and the superficiality of the hieroglyphs' groove have made the acquisition process very complex to the point of having to experiment with a pipeline that allows the structured light scanner not to lose the homologous points in the 3D alignment phase. For the texture reconstruction we used a last generation smartphone.

The extreme ultraviolet explorer archive

NASA Astrophysics Data System (ADS)

Polomski, E.; Drake, J. J.; Dobson, C.; Christian, C.

1993-09-01

The Extreme Ultrviolet Explorer (EUVE) public archive was created to handle the storage, maintenance, and distribution of EUVE data and ancillary documentation, information, and software. Access to the archive became available to the public on July 17, 1992, only 40 days after the launch of the EUVE satellite. A brief overview of the archive's contents and the various methods of access will be described.

EUV Coronal Waves: Atmospheric and Heliospheric Connections and Energetics

NASA Astrophysics Data System (ADS)

Patsourakos, S.

2015-12-01

Since their discovery in late 90's by EIT on SOHO, the study EUV coronal waves has been a fascinating andfrequently strongly debated research area. While it seems as ifan overall consensus has been reached about the nurture and nature of this phenomenon,there are still several important questions regarding EUV waves. By focusing on the most recentobservations, we will hereby present our current understanding about the nurture and nature of EUV waves,discuss their connections with other atmospheric and heliospheric phenomena (e.g.,flares and CMEs, Moreton waves, coronal shocks, coronal oscillations, SEP events) and finallyassess their possible energetic contribution to the overall budget of relatederuptive phenomena.

EUV spectroscopy of high-redshift x-ray objects

NASA Astrophysics Data System (ADS)

Kowalski, M. P.; Wolff, M. T.; Wood, K. S.; Barbee, T. W., Jr.; Barstow, M. A.

2010-07-01

As astronomical observations are pushed to cosmological distances (z>3) the spectral energy distributions of X-ray objects, AGN for example, will be redshifted into the EUV waveband. Consequently, a wealth of critical spectral diagnostics, provided by, for example, the Fe L-shell complex and the O VII/VIII lines, will be lost to future planned X-ray missions (e.g., IXO, Gen-X) if operated at traditional X-ray energies. This opens up a critical gap in performance located at short EUV wavelengths, where critical X-ray spectral transitions occur in high-z objects. However, normal-incidence multilayer-grating technology, which performs best precisely at such wavelengths, together with advanced nanolaminate replication techniques have been developed and are now mature to the point where advanced EUV instrument designs with performance complementary to IXO and Gen-X are practical. Such EUV instruments could be flown either independently or as secondary instruments on these X-ray missions. We present here a critical examination of the limits placed on extragalactic EUV measurements by ISM absorption, the range where high-z measurements are practical, and the requirements this imposes on next-generation instrument designs. We conclude with a discussion of a breakthrough technology, nanolaminate replication, which enables such instruments.

Registration performance on EUV masks using high-resolution registration metrology

NASA Astrophysics Data System (ADS)

Steinert, Steffen; Solowan, Hans-Michael; Park, Jinback; Han, Hakseung; Beyer, Dirk; Scherübl, Thomas

2016-10-01

Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

The EUV Helium Spectrum in the Quiet Sun: A By-Product of Coronal Emission?

NASA Technical Reports Server (NTRS)

Andretta, Vincenzo; DelZanna, Giulio; Jordan, Stuart D.; Oegerle, William (Technical Monitor)

2002-01-01

In this paper we test one of the mechanisms proposed to explain the intensities and other observed properties of the solar helium spectrum, and in particular of its Extreme-Ultraviolet (EUV) resonance lines. The so-called Photoionisation-Recombination (P-R) mechanism involves photoionisation of helium atoms and ions by EUV coronal radiation, followed by recombination cascades. We present calibrated measurements of EUV flux obtained with the two CDS spectrometers on board SOHO, in quiescent solar regions. We were able to obtain an essentially complete estimate of the total photoionizing flux in the wavelength range below 504 A (the photoionisation threshold for He(I)), as well as simultaneous measurements with the same instruments of the intensities of the strongest EUV helium lines: He(II) lambda304, He(I) lambda584, and He(I) lambda537. We find that there are not enough EUV photons to account for the observed helium line intensities. More specifically, we conclude that He(II) intensities cannot be explained by the P-R mechanism. Our results, however, leave open the possibility that the He(I) spectrum could be formed by the P-R mechanism, with the He(II) lambda304 line as a significant photoionizating source.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rickey, Daniel; Sasaki, David; Dubey, Arbind

Purpose: Three-dimensional printing has been implemented at our institution to create customized treatment accessories including shielding and bolus. In order to effectively use 3D printing, the topography of the patient must first be acquired. To this end, we have evaluated a low-cost structured-light 3D scanner in order to assess the clinical viability of this technology. Methods: For ease of use, the scanner (3D Systems, Sense 3D Scanner) was mounted in a simple gantry that guided its motion and maintained an optimum distance between the scanner and the object. To characterise the spatial accuracy of the scanner, we used a geometricmore » phantom and an anthropomorphic head phantom. The geometric phantom was machined from plastic and had overall dimensions of 24 cm by 15 cm and included a hemispherical and a tetrahedron protrusion roughly the dimensions of an average forehead and nose respectively. Meshes acquired by the optical scanner were compared to meshes generated from high-resolution CT images. Results: Scans were acquired in under one minute. Most of the optical scans contained noticeable artefacts although in most instances these were considered minor. Using an algorithm that calculated distances between the two meshes, we found most of the optical scanner measurements agreed with those from CT to within about 1 mm for the geometric phantom and to within about 2 mm for the head phantom. Conclusion: In summary, we deemed this scanner to be clinically acceptable and it has been used to design treatment accessories for several skin cancer patients.« less

EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

NASA Astrophysics Data System (ADS)

Attwood, David

2004-12-01

The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical issue of available EUV power from electrical discharge pinch plasmas and laser produced plasmas, including the roots of these requirements, the relevant plasma and radiation physics, and current state-of-the-art commercial technology. In the first paper of the cluster, Vadim Banine and Roel Moors of ASML in the Netherlands provide a detailed review of the required EUV power based on an economically viable throughput of one hundred 300 mm diameter wafers per hour, projected resist sensitivity, number of finite reflectivity multilayer coated surfaces and their collective spectral bandwidth, and a collection solid angle set by optical phase-space constraints and plasma source size. Thomas Krücken and his colleagues from Philips and the Fraunhofer Institute in Aachen present a theoretical model of radiation generation and transport based on model density and temperature profiles in an electrical discharge plasma, providing valuable insights into radiation physics and the limits to achievable power. Kenneth Fahy and his colleagues at UCD in Dublin and NIST in the US, in their paper, describe in detail atomic physics calculations of emission from relevant lines and unresolved transition arrays (UTAs) of candidate xenon and tin ions, each of which radiate strongly within the acceptance bandwidth of the multilayer coatings. The different elements, Xe and Sn, however, raise significantly different implications for source debris production and thus of requisite debris mitigation requirements. Björn Hannson and Hans Hertz of KTH University in Stockholm present a substantial review of laser produced plasmas for the EUV, including those based on liquid jet technologies, leading to a path of mass limited target material, and significant stand-off distance from the solid nozzle, which maximize EUV power generation while minimizing debris production. In addition to an extensive review of EUV source related literature, they describe experiments with laser irradiated droplets and filaments, for both Xe and Sn. The embodiment of electrical discharge plasmas and laser-produced plasmas into commercially available EUV sources, with EUV powers that project to suitable levels, is presented in the fifth paper by Uwe Stamm of XTREME Technologies in Göttingen. For discharge produced plasmas, thermal loading and electrode erosion are significant issues. Vladimir Borisov and his colleagues, at the Troitsk Institute outside Moscow, address these issues and provide novel ideas for the multiplexing of several discharge plasmas feeding a single optical system. Igor Fomenkov and his colleagues at Cymer in San Diego describe issues associated with a dense plasma focus pinch, including a comparison of operations with both positive and negative polarity. In the eighth paper, Malcolm McGeoch of Plex in Massachusetts provides a theoretical description of the vaporization and ionization of spherical tin droplets in discharge plasma. Together this cluster of papers provides a broad review of the current status of high power EUV plasma sources for semiconductor manufacturing. This very current topic, of intense interest worldwide, is considered further in a book [4] of collected papers to become available in mid-2005. Additionally, a special journal issue emphasizing coherent EUV sources, albeit at lower average powers, is soon to appear [5]. References [1] http://public.itrsr.net [2] Attwood D 2000 Soft X-Rays and Extreme Ultraviolet Radiation: Principles and Applications (Cambridge: Cambridge University Press) www.coe.Berkeley.edu/AST/sxreuv [3] Moore G E 1965 Cramming More Components onto Integrated Circuits Electronics Magazine 114 Moore G E 1995 Lithography and the Future of Moore's Law SPIE 243 2 [4] Bakshi V ed 2005 EUV Sources for Lithography (Bellingham WA:SPIE) at press [5] IEEE J. Special Topics in Quantum Electronics, Short Wavelength and EUV Lasers 10 Dec 2004 at press

Two-phase Heating in Flaring Loops

NASA Astrophysics Data System (ADS)

Zhu, Chunming; Qiu, Jiong; Longcope, Dana W.

2018-03-01

We analyze and model a C5.7 two-ribbon solar flare observed by the Solar Dynamics Observatory, Hinode, and GOES on 2011 December 26. The flare is made of many loops formed and heated successively over one and half hours, and their footpoints are brightened in the UV 1600 Å before enhanced soft X-ray and EUV missions are observed in flare loops. Assuming that anchored at each brightened UV pixel is a half flaring loop, we identify more than 6700 half flaring loops, and infer the heating rate of each loop from the UV light curve at the footpoint. In each half loop, the heating rate consists of two phases: intense impulsive heating followed by a low-rate heating that is persistent for more than 20 minutes. Using these heating rates, we simulate the evolution of their coronal temperatures and densities with the model of the “enthalpy-based thermal evolution of loops.” In the model, suppression of thermal conduction is also considered. This model successfully reproduces total soft X-ray and EUV light curves observed in 15 passbands by four instruments GOES, AIA, XRT, and EVE. In this flare, a total energy of 4.9 × 1030 erg is required to heat the corona, around 40% of this energy is in the slow-heating phase. About two-fifths of the total energy used to heat the corona is radiated by the coronal plasmas, and the other three fifth transported to the lower atmosphere by thermal conduction.

Fast, high-resolution 3D dosimetry utilizing a novel optical-CT scanner incorporating tertiary telecentric collimation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakhalkar, H. S.; Oldham, M.

2008-01-15

This study introduces a charge coupled device (CCD) area detector based optical-computed tomography (optical-CT) scanner for comprehensive verification of radiation dose distributions recorded in nonscattering radiochromic dosimeters. Defining characteristics include: (i) a very fast scanning time of {approx}5 min to acquire a complete three-dimensional (3D) dataset, (ii) improved image formation through the use of custom telecentric optics, which ensures accurate projection images and minimizes artifacts from scattered and stray-light sources, and (iii) high resolution (potentially 50 {mu}m) isotropic 3D dose readout. The performance of the CCD scanner for 3D dose readout was evaluated by comparison with independent 3D readout frommore » the single laser beam OCTOPUS-scanner for the same PRESAGE dosimeters. The OCTOPUS scanner was considered the 'gold standard' technique in light of prior studies demonstrating its accuracy. Additional comparisons were made against calculated dose distributions from the ECLIPSE treatment-planning system. Dose readout for the following treatments were investigated: (i) a single rectangular beam irradiation to investigate small field and very steep dose gradient dosimetry away from edge effects, (ii) a 2-field open beam parallel-opposed irradiation to investigate dosimetry along steep dose gradients, and (iii) a 7-field intensity modulated radiation therapy (IMRT) irradiation to investigate dosimetry for complex treatment delivery involving modulation of fluence and for dosimetry along moderate dose gradients. Dose profiles, dose-difference plots, and gamma maps were employed to evaluate quantitative estimates of agreement between independently measured and calculated dose distributions. Results indicated that dose readout from the CCD scanner was in agreement with independent gold-standard readout from the OCTOPUS-scanner as well as the calculated ECLIPSE dose distribution for all treatments, except in regions within a few millimeters of the edge of the dosimeter, where edge artifact is predominant. Agreement of line profiles was observed, even along steep dose gradients. Dose difference plots indicated that the CCD scanner dose readout differed from the OCTOPUSscanner readout and ECLIPSE calculations by {approx}10% along steep dose gradients and by {approx}5% along moderate dose gradients. Gamma maps (3% dose-difference and 3 mm distance-to-agreement acceptance criteria) revealed agreement, except for regions within 5 mm of the edge of the dosimeter where the edge artifact occurs. In summary, the data demonstrate feasibility of using the fast, high-resolution CCD scanner for comprehensive 3D dosimetry in all applications, except where dose readout is required close to the edges of the dosimeter. Further work is ongoing to reduce this artifact.« less

Multi-Spectral Solar Telescope Array. II - Soft X-ray/EUV reflectivity of the multilayer mirrors

NASA Technical Reports Server (NTRS)

Barbee, Troy W., Jr.; Weed, J. W.; Hoover, Richard B.; Allen, Maxwell J.; Lindblom, Joakim F.; O'Neal, Ray H.; Kankelborg, Charles C.; Deforest, Craig E.; Paris, Elizabeth S.; Walker, Arthur B. C., Jr.

1991-01-01

The Multispectral Solar Telescope Array is a rocket-borne observatory which encompasses seven compact soft X-ray/EUV, multilayer-coated, and two compact far-UV, interference film-coated, Cassegrain and Ritchey-Chretien telescopes. Extensive measurements are presented on the efficiency and spectral bandpass of the X-ray/EUV telescopes. Attention is given to systematic errors and measurement errors.

EUV spectroscopy in astrophysics: The role of compact objects

NASA Astrophysics Data System (ADS)

Wood, K. S.; Kowalski, M. P.; Cruddace, R. G.; Barstow, M. A.

2006-01-01

The bulk of radiation from million-degree plasmas is emitted at EUV wavelengths. Such plasmas are ubiquitous in astrophysics, and examples include the atmospheres of white dwarfs, accretion phenomena in cataclysmic variables (CVs) and some active galactic nuclei (AGN), the coronae of active stars, and the interstellar medium (ISM) of our own galaxy as well as of others. Internally, white dwarfs are formally analogous to neutron stars, being stellar configurations where the thermal contribution to support is secondary. Both stellar types have various intrinsic and environmental parameters. Comparison of such analogous systems using scaled parameters can be fruitful. Source class characterization is mature enough that such analogies can be used to compare theoretical ideas across a wide dynamic range in parameters, one example being theories of quasiperiodic oscillations. However, the white dwarf side of this program is limited by the available photometry and spectroscopy at EUV wavelengths, where there exist critical spectral features that contain diagnostic information often not available at other wavelengths. Moreover, interstellar absorption makes EUV observations challenging. Results from an observation of the hot white dwarf G191-B2B are presented to demonstrate the promise of high-resolution EUV spectroscopy. Two types of CVs, exemplified by AM Her and EX Hya, are used to illustrate blending of spectroscopy and timing measurements. Dynamical timescales and envisioned performance parameters of next-generation EUV satellites (effective area >20 cm 2, spectral resolution >10,000) make possible a new level of source modeling. The importance of the EUV cannot be overlooked given that observations are continually being pushed to cosmological distances, where the spectral energy distributions of X-ray bright AGNs, for example, will have their maxima redshifted into the EUV. Sometimes wrongly dismissed for limitations of small bandwidth or local view from optical depth limitations, the EUV is instead a gold mine of information bearing upon key issues in compact objects, but it is information that must be won through the triple combination of high-spectral resolution, large area, and application of advanced theory.

Mars Thermospheric Temperature Sensitivity to Solar EUV Forcing from the MAVEN EUV Monitor

NASA Astrophysics Data System (ADS)

Thiemann, Ed; Eparvier, Francis; Andersson, Laila; Pilinski, Marcin; Chamberlin, Phillip; Fowler, Christopher; MAVEN Extreme Ultraviolet Monitor Team, MAVEN Langmuir Probe and Waves Team

2017-10-01

Solar extreme ultraviolet (EUV) radiation is the primary heat source for the Mars thermosphere, and the primary source of long-term temperature variability. The Mars obliquity, dust cycle, tides and waves also drive thermospheric temperature variability; and it is important to quantify the role of each in order to understand processes in the upper atmosphere today and, ultimately, the evolution of Mars climate over time. Although EUV radiation is the dominant heating mechanism, accurately measuring the thermospheric temperature sensitivity to EUV forcing has remained elusive, in part, because Mars thermospheric temperature varies dramatically with latitude and local time (LT), ranging from 150K on the nightside to 300K on the dayside. It follows that studies of thermospheric variability must control for location.Instruments onboard the Mars Atmosphere and Volatile EvolutioN (MAVEN) orbiter have begun to characterize thermospheric temperature sensitivity to EUV forcing. Bougher et al. [2017] used measurements from the Imaging Ultraviolet Spectrograph (IUVS) and the Neutral Gas and Ion Mass Spectrometer (NGIMS) to characterize solar activity trends in the thermosphere with some success. However, aside from restricting measurements to solar zenith angles (SZAs) below 75 degrees, they were unable to control for latitude and LT because repeat-track observations from either instrument were limited or unavailable.The MAVEN EUV Monitor (EUVM) has recently demonstrated the capability to measure thermospheric density from 100 to 200 km with solar occultations of its 17-22 nm channel. These new density measurements are ideal for tracking the long-term thermospheric temperature variability because they are inherently constrained to either 06:00 or 18:00 LT, and the orbit has precessed to include a range of ecliptic latitudes, a number of which have been revisited multiple times over 2.5 years. In this study we present, for the first-time, measurements of thermospheric temperature sensitivity to EUV forcing derived from the EUVM measurements. These results include sensitives measured at the poles and near the equator for both terminators; therefore, we will also discuss the role of latitude on EUV temperature sensitivity.

Time-Resolved Spectroscopy of Active Binary Stars

NASA Technical Reports Server (NTRS)

Brown, Alexander

2000-01-01

This NASA grant covered EUVE observing and data analysis programs during EUVE Cycle 5 GO observing. The research involved a single Guest Observer project 97-EUVE-061 "Time-Resolved Spectroscopy of Active Binary Stars". The grant provided funding that covered 1.25 months of the PI's salary. The activities undertaken included observation planning and data analysis (both temporal and spectral). This project was awarded 910 ksec of observing time to study seven active binary stars, all but one of which were actually observed. Lambda-And was observed on 1997 Jul 30 - Aug 3 and Aug 7-14 for a total of 297 ksec; these observations showed two large complex flares that were analyzed by Osten & Brown (1999). AR Psc, observed for 350 ksec on 1997 Aug 27 - Sep 13, showed only relatively small flares that were also discussed by Osten & Brown (1999). EUVE observations of El Eri were obtained on 1994 August 24-28, simultaneous with ASCA X-ray spectra. Four flares were detected by EUVE with one of these also observed simultaneously, by ASCA. The other three EUVE observations were of the stars BY Dra (1997 Sep 22-28), V478 Lyr (1998 May 18-27), and sigma Gem (1998 Dec 10-22). The first two stars showed a few small flares. The sigma Gem data shows a beautiful complete flare with a factor of ten peak brightness compared to quiescence. The flare rise and almost all the decay phase are observed. Unfortunately no observations in other spectral regions were obtained for these stars. Analysis of the lambda-And and AR Psc observations is complete and the results were published in Osten & Brown (1999). Analysis of the BY Dra, V478 Lyr and sigma Gem EUVE data is complete and will be published in Osten (2000, in prep.). The El Eri EUV analysis is also completed and the simultaneous EUV/X-ray study will be published in Osten et al. (2000, in prep.). Both these latter papers will be submitted in summer 2000. All these results will form part of Rachel Osten's PhD thesis.

Exploring dynamic events in the solar corona

NASA Astrophysics Data System (ADS)

Downs, Cooper James

With the advent of modern computational technology it is now becoming the norm to employ detailed 3D computer models as empirical tools that directly account for the inhomogeneous nature of the Sun-Heliosphere environment. The key advantage of this approach lies in the ability to compare model results directly to observational data and to use a successful comparison (or lack thereof) to glean information on the underlying physical processes. Using extreme ultraviolet waves (EUV waves) as the overarching scientific driver, we apply this observation modeling approach to study the complex dynamics of the magnetic and thermodynamic structures that are observed in the low solar corona. Representing a highly non-trivial effort, this work includes three main scientific thrusts: an initial modeling effort and two EUV wave case-studies. First we document the development of the new Low Corona (LC) model, a 3D time-dependent thermodynamic magnetohydrodynamic (MHD) model implemented within the Space Weather Modeling Framework (SWMF). Observation synthesis methods are integrated within the LC model, which provides the ability to compare model results directly to EUV imaging observations taken by spacecraft. The new model is then used to explore the dynamic interplay between magnetic structures and thermodynamic energy balance in the corona that is caused by coronal heating mechanisms. With the model development complete, we investigate the nature of EUV waves in detail through two case-studies. Starting with the 2008 March 25 event, we conduct a series of numerical simulations that independently vary fundamental parameters thought to govern the physical mechanisms behind EUV waves. Through the subsequent analysis of the 3D data and comparison to observations we find evidence for both wave and non-wave mechanisms contributing to the EUV wave signal. We conclude with a comprehensive observation and modeling analysis of the 2010 June 13 EUV wave event, which was observed by the recently launched Solar Dynamics Observatory. We use a high resolution simulation of the transient to unambiguously characterize the globally propagating front of EUV wave as a fast-mode magnetosonic wave, and use the rich set of observations to place the many other facets of the EUV transient within a unified scenario involving wave and non-wave components.

Application of a color scanner for 60Co high dose rate brachytherapy dosimetry with EBT radiochromic film

PubMed Central

Ghorbani, Mahdi; Toossi, Mohammad Taghi Bahreyni; Mowlavi, Ali Asghar; Roodi, Shahram Bayani; Meigooni, Ali Soleimani

2012-01-01

Background. The aim of this study is to evaluate the performance of a color scanner as a radiochromic film reader in two dimensional dosimetry around a high dose rate brachytherapy source. Materials and methods A Microtek ScanMaker 1000XL film scanner was utilized for the measurement of dose distribution around a high dose rate GZP6 60Co brachytherapy source with GafChromic® EBT radiochromic films. In these investigations, the non-uniformity of the film and scanner response, combined, as well as the films sensitivity to scanner’s light source was evaluated using multiple samples of films, prior to the source dosimetry. The results of these measurements were compared with the Monte Carlo simulated data using MCNPX code. In addition, isodose curves acquired by radiochromic films and Monte Carlo simulation were compared with those provided by the GZP6 treatment planning system. Results Scanning of samples of uniformly irradiated films demonstrated approximately 2.85% and 4.97% nonuniformity of the response, respectively in the longitudinal and transverse directions of the film. Our findings have also indicated that the film response is not affected by the exposure to the scanner’s light source, particularly in multiple scanning of film. The results of radiochromic film measurements are in good agreement with the Monte Carlo calculations (4%) and the corresponding dose values presented by the GZP6 treatment planning system (5%). Conclusions The results of these investigations indicate that the Microtek ScanMaker 1000XL color scanner in conjunction with GafChromic EBT film is a reliable system for dosimetric evaluation of a high dose rate brachytherapy source. PMID:23411947

Laser scanning endoscope for diagnostic medicine

NASA Astrophysics Data System (ADS)

Ouimette, Donald R.; Nudelman, Sol; Spackman, Thomas; Zaccheo, Scott

1990-07-01

A new type of endoscope is being developed which utilizes an optical raster scanning system for imaging through an endoscope. The optical raster scanner utilizes a high speed, multifaceted, rotating polygon mirror system for horizontal deflection, and a slower speed galvanometer driven mirror as the vertical deflection system. When used in combination, the optical raster scanner traces out a raster similar to an electron beam raster used in television systems. This flying spot of light can then be detected by various types of photosensitive detectors to generate a video image of the surface or scene being illuminated by the scanning beam. The optical raster scanner has been coupled to an endoscope. The raster is projected down the endoscope, thereby illuminating the object to be imaged at the distal end of the endoscope. Elemental photodetectors are placed at the distal or proximal end of the endoscope to detect the reflected illumination from the flying spot of light. This time sequenced signal is captured by an image processor for display and processing. This technique offers the possibility for very small diameter endoscopes since illumination channel requirements are eliminated. Using various lasers, very specific spectral selectivity can be achieved to optimum contrast of specific lesions of interest. Using several laser lines, or a white light source, with detectors of specific spectral response, multiple spectrally selected images can be acquired simultaneously. The potential for co-linear therapy delivery while imaging is also possible.

Ultrafast magnetodynamics with free-electron lasers

NASA Astrophysics Data System (ADS)

Malvestuto, Marco; Ciprian, Roberta; Caretta, Antonio; Casarin, Barbara; Parmigiani, Fulvio

2018-02-01

The study of ultrafast magnetodynamics has entered a new era thanks to the groundbreaking technological advances in free-electron laser (FEL) light sources. The advent of these light sources has made possible unprecedented experimental schemes for time-resolved x-ray magneto-optic spectroscopies, which are now paving the road for exploring the ultimate limits of out-of-equilibrium magnetic phenomena. In particular, these studies will provide insights into elementary mechanisms governing spin and orbital dynamics, therefore contributing to the development of ultrafast devices for relevant magnetic technologies. This topical review focuses on recent advancement in the study of non-equilibrium magnetic phenomena from the perspective of time-resolved extreme ultra violet (EUV) and soft x-ray spectroscopies at FELs with highlights of some important experimental results.

Accuracy in contouring of small and low contrast lesions: Comparison between diagnostic quality computed tomography scanner and computed tomography simulation scanner-A phantom study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Yick Wing, E-mail: mpr@hksh.com; Wong, Wing Kei Rebecca; Yu, Siu Ki

2012-01-01

To evaluate the accuracy in detection of small and low-contrast regions using a high-definition diagnostic computed tomography (CT) scanner compared with a radiotherapy CT simulation scanner. A custom-made phantom with cylindrical holes of diameters ranging from 2-9 mm was filled with 9 different concentrations of contrast solution. The phantom was scanned using a 16-slice multidetector CT simulation scanner (LightSpeed RT16, General Electric Healthcare, Milwaukee, WI) and a 64-slice high-definition diagnostic CT scanner (Discovery CT750 HD, General Electric Healthcare). The low-contrast regions of interest (ROIs) were delineated automatically upon their full width at half maximum of the CT number profile inmore » Hounsfield units on a treatment planning workstation. Two conformal indexes, CI{sub in}, and CI{sub out}, were calculated to represent the percentage errors of underestimation and overestimation in the automated contours compared with their actual sizes. Summarizing the conformal indexes of different sizes and contrast concentration, the means of CI{sub in} and CI{sub out} for the CT simulation scanner were 33.7% and 60.9%, respectively, and 10.5% and 41.5% were found for the diagnostic CT scanner. The mean differences between the 2 scanners' CI{sub in} and CI{sub out} were shown to be significant with p < 0.001. A descending trend of the index values was observed as the ROI size increases for both scanners, which indicates an improved accuracy when the ROI size increases, whereas no observable trend was found in the contouring accuracy with respect to the contrast levels in this study. Images acquired by the diagnostic CT scanner allow higher accuracy on size estimation compared with the CT simulation scanner in this study. We recommend using a diagnostic CT scanner to scan patients with small lesions (<1 cm in diameter) for radiotherapy treatment planning, especially for those pending for stereotactic radiosurgery in which accurate delineation of small-sized, low-contrast regions is important for dose calculation.« less

High efficiency conical scanner for earth resources applications

NASA Technical Reports Server (NTRS)

Bates, J. C.; Dumas, H. J., Jr.

1975-01-01

A description is given of a six-arm conical scanner which was selected to provide a continuous line-of-sight scan. Two versions of the instrument are considered. The two versions differ in their weight. The weight of the heavy version is 600 lbs. A light weight design which employs beryllium and aluminum optical components weighs only 350 lbs. A multiplexer and analog-to-digital converter are to be incorporated into the design. Questions of instrument performance are also discussed.

Evaluation Of Back Shape Using The ISIS Scanner

NASA Astrophysics Data System (ADS)

Turner-Smith, Alan R.; Thomas, David C.

1989-04-01

The Integrated Shape Investigation System (ISIS) is a structured light scanner and shape analysis system, developed as a safe alternative to follow-up radiographs for the clinical assessment of deformities of the human back. The system is described and results presented of several clinic studies. These show a significant correlation between ISIS measures and conventional radiographic measures of spinal curvature, such as the Cobb angle. The development of a predictor for deterioration in adolescent idiopathic scoliosis, based on surface shape weasures, is discussed.

Rectangular Relief Diffraction Gratings for Coherent Lidar Beam Scanning

NASA Technical Reports Server (NTRS)

Cole, H. J.; Chambers, D. M.; Dixit, S. N.; Britten, J. A.; Shore, B. W.; Kavaya, M. J.

1999-01-01

The application of specialized rectangular relief transmission gratings to coherent lidar beam scanning is presented. Two types of surface relief transmission grating approaches are studied with an eye toward potential insertion of a constant thickness, diffractive scanner where refractive wedges now exist. The first diffractive approach uses vertically oriented relief structure in the surface of an optical flat; illumination of the diffractive scanner is off-normal in nature. The second grating design case describes rectangular relief structure slanted at a prescribed angle with respect to the surface. In this case, illumination is normal to the diffractive scanner. In both cases, performance predictions for 2.0 micron, circularly polarized light at beam deflection angles of 30 or 45 degrees are presented.

Application of Laser Plasma Sources of Soft X-rays and Extreme Ultraviolet (EUV) in Imaging, Processing Materials and Photoionization Studies

NASA Astrophysics Data System (ADS)

Fiedorowicz, H.; Bartnik, A.; Wachulak, P. W.; Jarocki, R.; Kostecki, J.; Szczurek, M.; Ahad, I. U.; Fok, T.; Szczurek, A.; Wȩgrzyński, Ł.

In the paper we present new applications of laser plasma sources of soft X-rays and extreme ultraviolet (EUV) in various areas of plasma physics, nanotechnology and biomedical engineering. The sources are based on a gas puff target irradiated with nanosecond laser pulses from commercial Nd: YAG lasers, generating pulses with time duration from 1 to 10 ns and energies from 0.5 to 10 J at a 10 Hz repetition rate. The targets are produced with the use of a double valve system equipped with a special nozzle to form a double-stream gas puff target which allows for high conversion efficiency of laser energy into soft X-rays and EUV without degradation of the nozzle. The sources are equipped with various optical systems to collect soft X-ray and EUV radiation and form the radiation beam. New applications of these sources in imaging, including EUV tomography and soft X-ray microscopy, processing of materials and photoionization studies are presented.

Nanoimaging using soft X-ray and EUV laser-plasma sources

NASA Astrophysics Data System (ADS)

Wachulak, Przemyslaw; Torrisi, Alfio; Ayele, Mesfin; Bartnik, Andrzej; Czwartos, Joanna; Węgrzyński, Łukasz; Fok, Tomasz; Fiedorowicz, Henryk

2018-01-01

In this work we present three experimental, compact desk-top imaging systems: SXR and EUV full field microscopes and the SXR contact microscope. The systems are based on laser-plasma EUV and SXR sources based on a double stream gas puff target. The EUV and SXR full field microscopes, operating at 13.8 nm and 2.88 nm wavelengths are capable of imaging nanostructures with a sub-50 nm spatial resolution and short (seconds) exposure times. The SXR contact microscope operates in the "water-window" spectral range and produces an imprint of the internal structure of the imaged sample in a thin layer of SXR sensitive photoresist. Applications of such desk-top EUV and SXR microscopes, mostly for biological samples (CT26 fibroblast cells and Keratinocytes) are also presented. Details about the sources, the microscopes as well as the imaging results for various objects will be presented and discussed. The development of such compact imaging systems may be important to the new research related to biological, material science and nanotechnology applications.

Development of EUV mask handling technology at MIRAI-Selete

NASA Astrophysics Data System (ADS)

Ota, Kazuya; Amemiya, Mitsuaki; Taguchi, Takao; Kamono, Takashi; Kubo, Hiroyoshi; Takikawa, Tadahiko; Usui, Yoichi; Suga, Osamu

2007-03-01

We, MIRAI-Selete, started a new EUV mask program in April, 2006. Development of EUV mask handling technology is one of the key areas of the program. We plan to develop mask handling technology and to evaluate EUV mask carriers using Lasertec M3350, a particle inspection tool with the defect sensitivity less than 50nm PSL, and Mask Protection Engineering Tool (named "MPE Tool"). M3350 is a newly developed tool based on a conventional M1350 for EUV blanks inspection. Since our M3350 has a blank flipping mechanism in it, we can inspect the front and the back surface of the blank automatically. We plan to use the M3350 for evaluating particle adders during mask shipping, storage and handling. MPE Tool is a special tool exclusively developed for demonstration of pellicleless mask handling. It can handle a mask within a protective enclosure, which Canon and Nikon have been jointly proposing1, and also, can be modified to handle other type of carrier as the need arises.

EB and EUV lithography using inedible cellulose-based biomass resist material

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

High performance EUV multilayer structures insensitive to capping layer optical parameters.

PubMed

Pelizzo, Maria Guglielmina; Suman, Michele; Monaco, Gianni; Nicolosi, Piergiorgio; Windt, David L

2008-09-15

We have designed and tested a-periodic multilayer structures containing protective capping layers in order to obtain improved stability with respect to any possible changes of the capping layer optical properties (due to oxidation and contamination, for example)-while simultaneously maximizing the EUV reflection efficiency for specific applications, and in particular for EUV lithography. Such coatings may be particularly useful in EUV lithographic apparatus, because they provide both high integrated photon flux and higher stability to the harsh operating environment, which can affect seriously the performance of the multilayer-coated projector system optics. In this work, an evolutive algorithm has been developed in order to design these a-periodic structures, which have been proven to have also the property of stable performance with respect to random layer thickness errors that might occur during coating deposition. Prototypes have been fabricated, and tested with EUV and X-ray reflectometry, and secondary electron spectroscopy. The experimental results clearly show improved performance of our new a-periodic coatings design compared with standard periodic multilayer structures.

Direct EUV/X-Ray Modulation of the Ionosphere During the August 2017 Total Solar Eclipse

NASA Astrophysics Data System (ADS)

Mrak, Sebastijan; Semeter, Joshua; Drob, Douglas; Huba, J. D.

2018-05-01

The great American total solar eclipse of 21 August 2017 offered a fortuitous opportunity to study the response of the atmosphere and ionosphere using a myriad of ground instruments. We have used the network of U.S. Global Positioning System receivers to examine perturbations in maps of ionospheric total electron content (TEC). Coherent large-scale variations in TEC have been interpreted by others as gravity wave-induced traveling ionospheric disturbances. However, the solar disk had two active regions at that time, one near the center of the disk and one at the edge, which resulted in an irregular illumination pattern in the extreme ultraviolet (EUV)/X-ray bands. Using detailed EUV occultation maps calculated from the National Aeronautics and Space Administration Solar Dynamics Observatory Atmospheric Imaging Assembly images, we show excellent agreement between TEC perturbations and computed gradients in EUV illumination. The results strongly suggest that prominent large-scale TEC disturbances were consequences of direct EUV modulation, rather than gravity wave-induced traveling ionospheric disturbances.

Normal incidence spectrophotometer using high density transmission grating technology and highly efficiency silicon photodiodes for absolute solar EUV irradiance measurements

NASA Technical Reports Server (NTRS)

Ogawa, H. S.; Mcmullin, D.; Judge, D. L.; Korde, R.

1992-01-01

New developments in transmission grating and photodiode technology now make it possible to realize spectrometers in the extreme ultraviolet (EUV) spectral region (wavelengths less than 1000 A) which are expected to be virtually constant in their diffraction and detector properties. Time dependent effects associated with reflection gratings are eliminated through the use of free standing transmission gratings. These gratings together with recently developed and highly stable EUV photodiodes have been utilized to construct a highly stable normal incidence spectrophotometer to monitor the variability and absolute intensity of the solar 304 A line. Owing to its low weight and compactness, such a spectrometer will be a valuable tool for providing absolute solar irradiance throughout the EUV. This novel instrument will also be useful for cross-calibrating other EUV flight instruments and will be flown on a series of Hitchhiker Shuttle Flights and on SOHO. A preliminary version of this instrument has been fabricated and characterized, and the results are described.

Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirkarimi, Paul B.; Bajt, Sasa; Wall, Mark A.

2000-04-01

Multilayer-coated Zerodur optics are expected to play a pivotal role in an extreme-ultraviolet (EUV) lithography tool. Zerodur is a multiphase, multicomponent material that is a much more complicated substrate than commonly used single-crystal Si or fused-silica substrates. We investigate the effect of Zerodur substrates on the performance of high-EUV reflectance Mo/Si and Mo/Be multilayer thin films. For Mo/Si the EUV reflectance had a nearly linear dependence on substrate roughness for roughness values of 0.06-0.36 nm rms, and the FWHM of the reflectance curves (spectral bandwidth) was essentially constant over this range. For Mo/Be the EUV reflectance was observed to decreasemore » more steeply than Mo/Si for roughness values greater than approximately 0.2-0.3 nm. Little difference was observed in the EUV reflectivity of multilayer thin films deposited on different substrates as long as the substrate roughness values were similar. (c) 2000 Optical Society of America.« less

Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography.

PubMed

Mirkarimi, P B; Bajt, S; Wall, M A

2000-04-01

Multilayer-coated Zerodur optics are expected to play a pivotal role in an extreme-ultraviolet (EUV) lithography tool. Zerodur is a multiphase, multicomponent material that is a much more complicated substrate than commonly used single-crystal Si or fused-silica substrates. We investigate the effect of Zerodur substrates on the performance of high-EUV reflectance Mo/Si and Mo/Be multilayer thin films. For Mo/Si the EUV reflectance had a nearly linear dependence on substrate roughness for roughness values of 0.06-0.36 nm rms, and the FWHM of the reflectance curves (spectral bandwidth) was essentially constant over this range. For Mo/Be the EUV reflectance was observed to decrease more steeply than Mo/Si for roughness values greater than approximately 0.2-0.3 nm. Little difference was observed in the EUV reflectivity of multilayer thin films deposited on different substrates as long as the substrate roughness values were similar.

The extreme ultraviolet explorer

NASA Technical Reports Server (NTRS)

Bowyer, Stuart; Malina, Roger F.

1990-01-01

The Extreme Ultraviolet Explorer (EUVE) mission, currently scheduled for launch in September 1991, is described. The primary purpose of the mission is to survey the celestial sphere for astronomical sources of Extreme Ultraviolet (EUV) radiation. The survey will be accomplished with the use of three EUV telescopes, each sensitive to a different segment of the EUV band. A fourth telescope will perform a high sensitivity search of a limited sample of the sky in the shortest wavelength bands. The all sky survey will be carried out in the first six months of the mission and will be made in four bands, or colors. The second phase of the mission, conducted entirely by guest observers selected by NASA, will be devoted to spectroscopic observations of EUV sources. The performance of the instrument components is described. An end to end model of the mission, from a stellar source to the resulting scientific data, was constructed. Hypothetical data from astronomical sources processed through this model are shown.

Prolongation of ERP latency and reaction time (RT) in simultaneous EEG/fMRI data acquisition.

PubMed

Chun, Jinsoo; Peltier, Scott J; Yoon, Daehyun; Manschreck, Theo C; Deldin, Patricia J

2016-08-01

Recording EEG and fMRI data simultaneously inside a fully-operating scanner has been recognized as a novel approach in human brain research. Studies have demonstrated high concordance between the EEG signals and hemodynamic response. However, a few studies reported altered cognitive process inside the fMRI scanner such as delayed reaction time (RT) and reduced and/or delayed N100 and P300 event-related brain potential (ERP) components. The present study investigated the influence of electromagnetic field (static magnetic field, radio frequency (RF) pulse, and gradient switching) and experimental environment on posterior N100 and P300 ERP components in four different settings with six healthy subjects using a visual oddball task: (1) classic fMRI acquisition inside the scanner (e.g., supine position, mirror glasses for stimulus presentation), (2) standard behavioral experiment outside the scanner (e.g., seated position, keyboard response), (3) controlled fMRI acquisition inside the scanner (e.g., organic light-emitting diode (OLED) goggles for stimulus presentation) inside; and (4) modified behavioral experiment outside the scanner (e.g., supine position, OLED goggles). The study findings indicated that the experimental environment in simultaneous EEG/fMRI acquisition could substantially delay N1P, P300 latency, and RT inside the scanner, and was associated with a reduced N1P amplitude. There was no effect of electromagnetic field in the prolongation of RT, N1P and P300 latency inside the scanner. N1P, but not P300, latency was sensitive to stimulus presentation method inside the scanner. Future simultaneous EEG/fMRI data collection should consider experimental environment in both design and analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

EUVE/XTE orbit decay study

NASA Technical Reports Server (NTRS)

Richon, K.; Hashmall, J.; Lambertson, M.; Phillips, T.

1988-01-01

The Explorer Platform (EP) program currently comprises two missions, the Extreme Ultraviolet Explorer (EUVE) and the X-ray Timing Explorer (XTE), each of which consists of a scientific payload mounted to the EP. The EP has no orbit maintenance capability. The EP with the EUVE payload will be launched first. At the end of the EUVE mission, the spacecraft will be serviced by the Space Transportation System (STS), and the EUVE instrument will be exchanged for the XTE. The XTE mission will continue until reentry or reservicing by the STS. Because the missions will be using the EP sequentially, the orbit requirements are unusually constrained by orbit decay rates. The initial altitude must be selected so that, by the end of the EUVE mission (2.5 years), the spacecraft will have decayed to an altitude within the STS capabilities. In addition, the payload exchange must occur at an altitude that ensures meeting the minimum XTE mission lifetime (3 years) because no STS reboost will be available. Studies were performed using the Goddard Mission Analysis System to estimate the effects of mass, cross-sectional area, and solar flux on the fulfillment of mission requirements. In addition to results from these studies, conclusions are presented as to the accuracy of the Marshall Space Flight Center solar flux predictions.

Reconstruction of Solar EUV Flux 1740-2015

NASA Astrophysics Data System (ADS)

Svalgaard, L.

2015-12-01

Solar Extreme Ultraviolet (EUV) radiation creates the conducting E-layer of the ionosphere, mainly by photo ionization of molecular Oxygen. Solar heating of the ionosphere creates thermal winds which by dynamo action induce an electric field driving an electric current having a magnetic effect observable on the ground, as was discovered by G. Graham in 1722. The current rises and sets with the Sun and thus causes a readily observable diurnal variation of the geomagnetic field, allowing us the deduce the conductivity and thus the EUV flux as far back as reliable magnetic data reach. High-quality data go back to the 'Magnetic Crusade' of the 1830s and less reliable, but still usable, data are available for portions of the hundred years before that. J.R. Wolf and, independently, J.-A. Gautier discovered the dependence of the diurnal variation on solar activity, and today we understand and can invert that relationship to construct a reliable record of the EUV flux from the geomagnetic record. We compare that to the F10.7 flux and the sunspot number, and find that the reconstructed EUV flux reproduces the F10.7 flux with great accuracy. On the other hand, it appears that the Relative Sunspot Number as currently defined is beginning to no longer be a faithful representation of solar magnetic activity, at least as measured by the EUV and related indices. The reconstruction suggests that the EUV flux reaches the same low (but non-zero) value at every sunspot minimum (possibly including Grand Minima), representing an invariant 'solar magnetic ground state'.

The extreme ultraviolet spectra of low-redshift radio-loud quasars

NASA Astrophysics Data System (ADS)

Punsly, Brian; Reynolds, Cormac; Marziani, Paola; O'Dea, Christopher P.

2016-07-01

This paper reports on the extreme ultraviolet (EUV) spectrum of three low-redshift (z ˜ 0.6) radio-loud quasars, 3C 95, 3C 57 and PKS 0405-123. The spectra were obtained with the Cosmic Origins Spectrograph of the Hubble Space Telescope. The bolometric thermal emission, Lbol, associated with the accretion flow is a large fraction of the Eddington limit for all of these sources. We estimate the long-term time-averaged jet power, overline{Q}, for the three sources. overline{Q}/L_{bol}, is shown to lie along the correlation of overline{Q}/L_{bol}, and αEUV found in previous studies of the EUV continuum of intermediate and high-redshift quasars, where the EUV continuum flux density between 1100 and 700 Å is defined by F_{ν } ˜ ν ^{-α _{EUV}}. The high Eddington ratios of the three quasars extend the analysis into a wider parameter space. Selecting quasars with high Eddington ratios has accentuated the statistical significance of the partial correlation analysis of the data. Namely, the correlation of overline{Q}/L_{bol} and αEUV is fundamental, and the correlation of overline{Q} and αEUV is spurious at a very high statistical significance level (99.8 per cent). This supports the regulating role of ram pressure of the accretion flow in magnetically arrested accretion models of jet production. In the process of this study, we use multifrequency and multiresolution Very Large Array radio observations to determine that one of the bipolar jets in 3C 57 is likely frustrated by galactic gas that keeps the jet from propagating outside the host galaxy.

SEMATECH EUVL mask program status

NASA Astrophysics Data System (ADS)

Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

2009-04-01

As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

It's Time For A New EUV Mission

NASA Astrophysics Data System (ADS)

Kowalski, Michael Paul; Wood, K. S.; Barstow, M. A.; Cruddace, R. G.

2010-01-01

The J-PEX high-resolution EUV spectrometer has made a breakthrough in capability with an effective area of 7 cm2 (220-245 Å) and resolving power of 4000, which exceed EUVE by factors of 7 and 20 respectively, and cover a range beyond the 170-Å cutoff of the Chandra LETG. The EUV includes critical spectral features containing diagnostic information often not available at other wavelengths (e.g., He II Ly series), and the bulk of radiation from million degree plasmas is emitted in the EUV. Such plasmas are ubiquitous, and examples include the atmospheres of white dwarfs; accretion phenomena in young stars, CVs and AGN; stellar coronae; and the ISM of our own galaxy and of others. However, sensitive EUV spectroscopy of high resolving power is required to resolve source spectral lines and edges unambiguously, to identify features produced by the intervening ISM, and to measure line profiles and Doppler shifts. This allows exploitation of the full range of plasma diagnostic techniques developed in laboratory and solar physics. J-PEX has flown twice on NASA sounding rockets. In 2001 we observed the isolated white dwarf G191-B2B and detected both ISM and photospheric lines. In 2008 we successfully observed the binary white dwarf Feige 24, but observation time is severely limited with sounding rockets. NASA has approved no new EUV mission, but it is time for one. Here we describe the scientific case for high-resolution EUV spectroscopy, summarize the technology that makes such measurements practical, and present a concept for a 3-month orbital mission, in which J-PEX is modified for a low-cost orbital mission to acquire sensitive high-resolution spectra for 30 white dwarfs, making an important contribution to the study of white dwarf evolution and hence the chemical balance of the Galaxy, and to the understanding of structure in the LISM.

Variable Distance Angular Symbology Reader

NASA Technical Reports Server (NTRS)

Schramm, Harry F., Jr. (Inventor); Corder, Eric L. (Inventor)

2006-01-01

A variable distance angular symbology, reader utilizes at least one light source to direct light through a beam splitter and onto a target. A target may be angled relative to the impinging light beam up to and maybe even greater than 45deg. A reflected beam from the target passes through the beam splitter and is preferably directed 90deg relative to the light source through a telecentric lens to a scanner which records an image of the target such as a direct part marking code.

EUV and X-ray spectroheliograph study

NASA Technical Reports Server (NTRS)

Knox, E. D.; Pastor, R. A.; Salamon, A. L.; Sterk, A. A.

1975-01-01

The results of a program directed toward the definition of an EUV and X-ray spectroheliograph which has significant performance and operational improvements over the OSO-7 instrument are documented. The program investigated methods of implementing selected changes and incorporated the results of the study into a set of drawings which defines the new instrument. The EUV detector performance degradation observed during the OSO-7 mission was investigated and the most probable cause of the degradation identified.

Principal investigators data package for Project Initiation Conference (PIC): EUVS sounding rocket no. 36.117CL. Target: Venus

NASA Technical Reports Server (NTRS)

Stern, S. Alan

1993-01-01

The region of the UV between 500 and 1200 A is a rich one for the study of planetary and astrophysical targets. EUV atmospheric spectroscopy opens up an important window on ion and neutral nitrogen, oxygen, and noble gas emissions. In this document we describe the specific scientific background and motivations for this Venus EUV rocket observation along with experiment design and mission parameters.

A sensitive EUV Schwarzschild microscope for plasma studies with sub-micrometer resolution

DOE PAGES

Zastrau, U.; Rodel, C.; Nakatsutsumi, M.; ...

2018-02-05

We present an extreme ultraviolet (EUV) microscope using a Schwarzschild objective which is optimized for single-shot sub-micrometer imaging of laser-plasma targets. The microscope has been designed and constructed for imaging the scattering from an EUV-heated solid-density hydrogen jet. Here, imaging of a cryogenic hydrogen target was demonstrated using single pulses of the free-electron laser in Hamburg (FLASH) free-electron laser at a wavelength of 13.5 nm. In a single exposure, we observe a hydrogen jet with ice fragments with a spatial resolution in the sub-micrometer range. In situ EUV imaging is expected to enable novel experimental capabilities for warm dense mattermore » studies of micrometer-sized samples in laser-plasma experiments.« less

A sensitive EUV Schwarzschild microscope for plasma studies with sub-micrometer resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zastrau, U.; Rodel, C.; Nakatsutsumi, M.

We present an extreme ultraviolet (EUV) microscope using a Schwarzschild objective which is optimized for single-shot sub-micrometer imaging of laser-plasma targets. The microscope has been designed and constructed for imaging the scattering from an EUV-heated solid-density hydrogen jet. Here, imaging of a cryogenic hydrogen target was demonstrated using single pulses of the free-electron laser in Hamburg (FLASH) free-electron laser at a wavelength of 13.5 nm. In a single exposure, we observe a hydrogen jet with ice fragments with a spatial resolution in the sub-micrometer range. In situ EUV imaging is expected to enable novel experimental capabilities for warm dense mattermore » studies of micrometer-sized samples in laser-plasma experiments.« less

Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

NASA Astrophysics Data System (ADS)

Kamikubo, Takashi; Ohnishi, Takayuki; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi; Bai, Shufeng; Wang, Jen-Shiang; Howell, Rafael; Chen, George; Li, Jiangwei; Tao, Jun; Wiley, Jim; Kurosawa, Terunobu; Saito, Yasuko; Takigawa, Tadahiro

2010-09-01

In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.

Coater/developer based techniques to improve high-resolution EUV patterning defectivity

NASA Astrophysics Data System (ADS)

Hontake, Koichi; Huli, Lior; Lemley, Corey; Hetzer, Dave; Liu, Eric; Ko, Akiteru; Kawakami, Shinichiro; Shimoaoki, Takeshi; Hashimoto, Yusaku; Tanaka, Koichiro; Petrillo, Karen; Meli, Luciana; De Silva, Anuja; Xu, Yongan; Felix, Nelson; Johnson, Richard; Murray, Cody; Hubbard, Alex

2017-10-01

Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates under consideration for enabling the next generation of devices, for 7nm node and beyond. As the focus shifts to driving down the 'effective' k1 factor and enabling the full scaling entitlement of EUV patterning, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse, and eliminate film-related defects. In addition, CD uniformity and LWR/LER must be improved in terms of patterning performance. Tokyo Electron Limited (TEL™) and IBM Corporation are continuously developing manufacturing quality processes for EUV. In this paper, we review the ongoing progress in coater/developer based processes (coating, developing, baking) that are required to enable EUV patterning.

Ultra-low roughness magneto-rheological finishing for EUV mask substrates

NASA Astrophysics Data System (ADS)

Dumas, Paul; Jenkins, Richard; McFee, Chuck; Kadaksham, Arun J.; Balachandran, Dave K.; Teki, Ranganath

2013-09-01

EUV mask substrates, made of titania-doped fused silica, ideally require sub-Angstrom surface roughness, sub-30 nm flatness, and no bumps/pits larger than 1 nm in height/depth. To achieve the above specifications, substrates must undergo iterative global and local polishing processes. Magnetorheological finishing (MRF) is a local polishing technique which can accurately and deterministically correct substrate figure, but typically results in a higher surface roughness than the current requirements for EUV substrates. We describe a new super-fine MRF® polishing fluid whichis able to meet both flatness and roughness specifications for EUV mask blanks. This eases the burden on the subsequent global polishing process by decreasing the polishing time, and hence the defectivity and extent of figure distortion.

Thin film filter lifetesting results in the extreme ultraviolet

NASA Technical Reports Server (NTRS)

Vedder, P. W.; Vallerga, J. V.; Gibson, J. L.; Stock, J.; Siegmund, O. H. W.

1993-01-01

We present the results of the thin film filter lifetesting program conducted as part of the NASA Extreme Ultraviolet Explorer (EUVE) satellite mission. This lifetesting program is designed to monitor changes in the transmission and mechanical properties of the EUVE filters over the lifetime of the mission (fabrication, assembly, launch and operation). Witness test filters were fabricated from thin film foils identical to those used in the flight filters. The witness filters have been examined and calibrated periodically over the past seven years. The filters have been examined for evidence of pinholing, mechanical degradation, and oxidation. Absolute transmissions of the flight and witness filters have been measured in the extreme ultraviolet (EUV) over six orders of magnitude at numerous wavelengths using the Berkeley EUV Calibration Facility.

Solar EUV irradiance from the San Marco ASSI - A reference spectrum

NASA Technical Reports Server (NTRS)

Schmidtke, Gerhard; Woods, Thomas N.; Worden, John; Rottman, Gary J.; Doll, Harry; Wita, Claus; Solomon, Stanley C.

1992-01-01

The only satellite measurement of the solar EUV irradiance during solar cycle 22 has been obtained with the Airglow Solar Spectrometer Instrument (ASSI) aboard the San Marco 5 satellite flown in 1988. The ASSI in-flight calibration parameters are established by using the internal capabilities of ASSI and by comparing ASSI results to the results from other space-based experiments on the ASSI calibration rocket and the Solar Mesospheric Explorer (SME). A solar EUV irradiance spectrum derived from ASSI observations on November 10, 1988 is presented as a reference spectrum for moderate solar activity for the aeronomy community. This ASSI spectrum should be considered as a refinement and extension of the solar EUV spectrum published for the same day by Woods and Rottman (1990).

Ultimate patterning limits for EUV at 5nm node and beyond

NASA Astrophysics Data System (ADS)

Ali, Rehab Kotb; Hamed Fatehy, Ahmed; Lafferty, Neal; Word, James

2018-03-01

The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring pattering limits of Single Exposure EUV Cut/Block mask in Self-Aligned-Multi-Patterning (SAMP) process, and (B) Exploring the pattering limits of a Single Exposure EUV printing of metal Layers. The printability of the resulted OPC masks is checked through a model based manufacturing flow for the two pattering approaches. The final manufactured patterns are quantified by Edge Placement Error (EPE), Process Variation Band (PVBand), soft/hard bridging and pinching, Image Log Slope (ILS) and Common Depth of Focus (CDOF)

SOHO/CDS Measurements of Coronal EUV Polarization above the Limb

NASA Technical Reports Server (NTRS)

Thomas, Roger J.; Oegerle, William R. (Technical Monitor)

2002-01-01

Attempts to measure polarization in coronal EUV emission above the solar limb have been made using the SOHO/CDS normal-incidence spectrometer which has a polarization sensitivity of about 50%, a property that causes variations in intensity response as a function of the spacecraft's roll angle for polarized light. Such observations were made on the disk and up to 0.22 solar radii above the solar limb in a number of EUV lines during two special roll-maneuvers of the SOHO spacecraft. Measurements of intensity gradients were made above a modestly active equatorial region in 1997 and above a relatively cool polar region in 2001. Observed emission lines include He I 584A, He II 304A, 0 IV 555+610A, 0 V 630A, Mg IX 368A, Mg X 610+625A, and Si XI 303A, formed at temperatures that evenly cover the range in logT from 4.1 to 6.2. Near the disk, measured intensities of all lines fall off exponentially at different rates that can be used to determine the density scale-heights of the emitting plasma, since this emission is dominated by collisional excitation with an Ne-squared dependence. Assuming hydrostatic equilibrium, the intensity gradient for each line can then be converted into a 'scale-height temperature', which is found to be closely related to the ionization temperature of each line over the wide range of lines and solar conditions observed. Beyond a certain distance, intensity gradients of the cooler lines switch over to a flatter exponential slope, suggesting that this radiation is dominated by resonance scattering which varies as Ne to the first power. Such radiation should also be linearly polarized in the plane containing the line-of-sight and the solar center, a signature that would strongly confirm this interpretation.

Classification and Physical parameters EUV coronal jets with STEREO/SECCHI.

NASA Astrophysics Data System (ADS)

Nistico, Giuseppe; Bothmer, Volker; Patsourakos, Spiro; Zimbardo, Gaetano

In this work we present observations of EUV coronal jets, detected with the SECCHI (Sun Earth Connection Coronal and Heliospheric Investigation) imaging suites of the two STEREO spacecraft. Starting from catalogues of polar and equatorial coronal hole jets (Nistico' et al., Solar Phys., 259, 87, 2009; Ann. Geophys. in press), identified from simultaneous EUV and white-light coronagraph observations, taken during the time period March 2007 to April 2008 when solar activity was at minimum, we perfom a detailed study of some events. A basic char-acterisation of the magnetic morphology and identification of the presence of helical structure were established with respect to recently proposed models for their origin and temporal evo-lution. A classification of the events with respect to previous jet studies shows that amongst the 79 events, identified into polar coronal holes, there were 37 Eiffel tower -type jet events commonly interpreted as a small-scale ( 35 arcsec) magnetic bipole reconnecting with the ambi-ent unipolar open coronal magnetic fields at its looptops, 12 lambda-type jet events commonly interpreted as reconnection with the ambient field happening at the bipoles footpoints. Five events were termed micro-CME type jet events because they resembled classical three-part structured coronal mass ejections (CMEs) but on much smaller scales. The remainig 25 cases could not be uniquely classified. Thirty-one of the total number of events exhibited a helical magnetic field structure, indicative for a torsional motion of the jet around its axis of propaga-tion. The jet events are found to be also present in equatorial coronal holes. We also present the 3-D reconstruction, temperature, velocity, and density measurements of a number of jets during their evolution.

Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

NASA Astrophysics Data System (ADS)

Huang, Qiushi; Medvedev, Viacheslav; van de Kruijs, Robbert; Yakshin, Andrey; Louis, Eric; Bijkerk, Fred

2017-03-01

Extreme ultraviolet and soft X-ray (XUV) multilayer optics have experienced significant development over the past few years, particularly on controlling the spectral characteristics of light for advanced applications like EUV photolithography, space observation, and accelerator- or lab-based XUV experiments. Both planar and three dimensional multilayer structures have been developed to tailor the spectral response in a wide wavelength range. For the planar multilayer optics, different layered schemes are explored. Stacks of periodic multilayers and capping layers are demonstrated to achieve multi-channel reflection or suppression of the reflective properties. Aperiodic multilayer structures enable broadband reflection both in angles and wavelengths, with the possibility of polarization control. The broad wavelength band multilayer is also used to shape attosecond pulses for the study of ultrafast phenomena. Narrowband multilayer monochromators are delivered to bridge the resolution gap between crystals and regular multilayers. High spectral purity multilayers with innovated anti-reflection structures are shown to select spectrally clean XUV radiation from broadband X-ray sources, especially the plasma sources for EUV lithography. Significant progress is also made in the three dimensional multilayer optics, i.e., combining micro- and nanostructures with multilayers, in order to provide new freedom to tune the spectral response. Several kinds of multilayer gratings, including multilayer coated gratings, sliced multilayer gratings, and lamellar multilayer gratings are being pursued for high resolution and high efficiency XUV spectrometers/monochromators, with their advantages and disadvantages, respectively. Multilayer diffraction optics are also developed for spectral purity enhancement. New structures like gratings, zone plates, and pyramids that obtain full suppression of the unwanted radiation and high XUV reflectance are reviewed. Based on the present achievement of the spectral tailoring multilayer optics, the remaining challenges and opportunities for future researches are discussed.

TIMED solar EUV experiment: preflight calibration results for the XUV photometer system

NASA Astrophysics Data System (ADS)

Woods, Thomas N.; Rodgers, Erica M.; Bailey, Scott M.; Eparvier, Francis G.; Ucker, Gregory J.

1999-10-01

The Solar EUV Experiment (SEE) on the NASA Thermosphere, Ionosphere, and Mesosphere Energetics and Dynamics (TIMED) mission will measure the solar vacuum ultraviolet (VUV) spectral irradiance from 0.1 to 200 nm. To cover this wide spectral range two different types of instruments are used: a grating spectrograph for spectra between 25 and 200 nm with a spectral resolution of 0.4 nm and a set of silicon soft x-ray (XUV) photodiodes with thin film filters as broadband photometers between 0.1 and 35 nm with individual bandpasses of about 5 nm. The grating spectrograph is called the EUV Grating Spectrograph (EGS), and it consists of a normal- incidence, concave diffraction grating used in a Rowland spectrograph configuration with a 64 X 1024 array CODACON detector. The primary calibrations for the EGS are done using the National Institute for Standards and Technology (NIST) Synchrotron Ultraviolet Radiation Facility (SURF-III) in Gaithersburg, Maryland. In addition, detector sensitivity and image quality, the grating scattered light, the grating higher order contributions, and the sun sensor field of view are characterized in the LASP calibration laboratory. The XUV photodiodes are called the XUV Photometer System (XPS), and the XPS includes 12 photodiodes with thin film filters deposited directly on the silicon photodiodes' top surface. The sensitivities of the XUV photodiodes are calibrated at both the NIST SURF-III and the Physikalisch-Technische Bundesanstalt (PTB) electron storage ring called BESSY. The other XPS calibrations, namely the electronics linearity and field of view maps, are performed in the LASP calibration laboratory. The XPS and solar sensor pre-flight calibration results are primarily discussed as the EGS calibrations at SURF-III have not yet been performed.

Extreme ultraviolet interferometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldberg, Kenneth A.

EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical dimension and smaller. In order to achieve diffraction-limited performance, all-reflective multilayer-coated lithographic imaging systems operating near 13-nm wavelength and 0.1 NA have system wavefront tolerances of 0.27 nm, or 0.02 waves RMS. Owing to the highly-sensitive resonant reflective properties of multilayer mirrors and extraordinarily tight tolerances set forth for their fabrication, EUV optical systems require at-wavelength EUV interferometry for final alignment and qualification. This dissertation discusses the development and successful implementation of high-accuracy EUV interferometric techniques. Proof-of-principle experiments with a prototype EUV point-diffraction interferometer for themore » measurement of Fresnel zoneplate lenses first demonstrated sub-wavelength EUV interferometric capability. These experiments spurred the development of the superior phase-shifting point-diffraction interferometer (PS/PDI), which has been implemented for the testing of an all-reflective lithographic-quality EUV optical system. Both systems rely on pinhole diffraction to produce spherical reference wavefronts in a common-path geometry. Extensive experiments demonstrate EUV wavefront-measuring precision beyond 0.02 waves RMS. EUV imaging experiments provide verification of the high-accuracy of the point-diffraction principle, and demonstrate the utility of the measurements in successfully predicting imaging performance. Complementary to the experimental research, several areas of theoretical investigation related to the novel PS/PDI system are presented. First-principles electromagnetic field simulations of pinhole diffraction are conducted to ascertain the upper limits of measurement accuracy and to guide selection of the pinhole diameter. Investigations of the relative merits of different PS/PDI configurations accompany a general study of the most significant sources of systematic measurement errors. To overcome a variety of experimental difficulties, several new methods in interferogram analysis and phase-retrieval were developed: the Fourier-Transform Method of Phase-Shift Determination, which uses Fourier-domain analysis to improve the accuracy of phase-shifting interferometry; the Fourier-Transform Guided Unwrap Method, which was developed to overcome difficulties associated with a high density of mid-spatial-frequency blemishes and which uses a low-spatial-frequency approximation to the measured wavefront to guide the phase unwrapping in the presence of noise; and, finally, an expedient method of Gram-Schmidt orthogonalization which facilitates polynomial basis transformations in wave-front surface fitting procedures.« less

THE INFLUENCE OF THE EXTREME ULTRAVIOLET SPECTRAL ENERGY DISTRIBUTION ON THE STRUCTURE AND COMPOSITION OF THE UPPER ATMOSPHERE OF EXOPLANETS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, J. H.; Ben-Jaffel, Lotfi, E-mail: guojh@ynao.ac.cn, E-mail: bjaffel@iap.fr

2016-02-20

By varying the profiles of stellar extreme ultraviolet (EUV) spectral energy distributions (SEDs), we tested the influences of stellar EUV SEDs on the physical and chemical properties of an escaping atmosphere. We apply our model to study four exoplanets: HD 189733b, HD 209458b, GJ 436b, and Kepler-11b. We find that the total mass loss rates of an exoplanet, which are determined mainly by the integrated fluxes, are moderately affected by the profiles of the EUV SED, but the composition and species distributions in the atmosphere can be dramatically modified by the different profiles of the EUV SED. For exoplanets withmore » a high hydrodynamic escape parameter (λ), the amount of atomic hydrogen produced by photoionization at different altitudes can vary by one to two orders of magnitude with the variation of stellar EUV SEDs. The effect of photoionization of H is prominent when the EUV SED is dominated by the low-energy spectral region (400–900 Å), which pushes the transition of H/H{sup +} to low altitudes. In contrast, the transition of H/H{sup +} moves to higher altitudes when most photons are concentrated in the high-energy spectral region (50–400 Å). For exoplanets with a low λ, the lower temperatures of the atmosphere make many chemical reactions so important that photoionization alone can no longer determine the composition of the escaping atmosphere. For HD 189733b, it is possible to explain the time variability of Lyα between 2010 and 2011 by a change in the EUV SED of the host K-type star, yet invoking only thermal H i in the atmosphere.« less

CME Expansion as the Driver of Metric Type II Shock Emission as Revealed by Self-consistent Analysis of High-Cadence EUV Images and Radio Spectrograms

NASA Astrophysics Data System (ADS)

Kouloumvakos, A.; Patsourakos, S.; Hillaris, A.; Vourlidas, A.; Preka-Papadema, P.; Moussas, X.; Caroubalos, C.; Tsitsipis, P.; Kontogeorgos, A.

2014-06-01

On 13 June 2010, an eruptive event occurred near the solar limb. It included a small filament eruption and the onset of a relatively narrow coronal mass ejection (CME) surrounded by an extreme ultraviolet (EUV) wave front recorded by the Solar Dynamics Observatory's (SDO) Atmospheric Imaging Assembly (AIA) at high cadence. The ejection was accompanied by a GOES M1.0 soft X-ray flare and a Type-II radio burst; high-resolution dynamic spectra of the latter were obtained by the Appareil de Routine pour le Traitement et l'Enregistrement Magnetique de l'Information Spectral (ARTEMIS IV) radio spectrograph. The combined observations enabled a study of the evolution of the ejecta and the EUV wave front and its relationship with the coronal shock manifesting itself as metric Type-II burst. By introducing a novel technique, which deduces a proxy of the EUV compression ratio from AIA imaging data and compares it with the compression ratio deduced from the band-split of the Type-II metric radio burst, we are able to infer the potential source locations of the radio emission of the shock on that AIA images. Our results indicate that the expansion of the CME ejecta is the source for both EUV and radio shock emissions. Early in the CME expansion phase, the Type-II burst seems to originate in the sheath region between the EUV bubble and the EUV shock front in both radial and lateral directions. This suggests that both the nose and the flanks of the expanding bubble could have driven the shock.

Capturing Fine Details Involving Low-Cost Sensors -a Comparative Study

NASA Astrophysics Data System (ADS)

Rehany, N.; Barsi, A.; Lovas, T.

2017-11-01

Capturing the fine details on the surface of small objects is a real challenge to many conventional surveying methods. Our paper discusses the investigation of several data acquisition technologies, such as arm scanner, structured light scanner, terrestrial laser scanner, object line-scanner, DSLR camera, and mobile phone camera. A palm-sized embossed sculpture reproduction was used as a test object; it has been surveyed by all the instruments. The result point clouds and meshes were then analyzed, using the arm scanner's dataset as reference. In addition to general statistics, the results have been evaluated based both on 3D deviation maps and 2D deviation graphs; the latter allows even more accurate analysis of the characteristics of the different data acquisition approaches. Additionally, own-developed local minimum maps were created that nicely visualize the potential level of detail provided by the applied technologies. Besides the usual geometric assessment, the paper discusses the different resource needs (cost, time, expertise) of the discussed techniques. Our results proved that even amateur sensors operated by amateur users can provide high quality datasets that enable engineering analysis. Based on the results, the paper contains an outlook to potential future investigations in this field.

Enhancement of EUV emission from a liquid microjet target by use of dual laser pulses

NASA Astrophysics Data System (ADS)

Higashiguchi, Takeshi; Rajyaguru, Chirag; Koga, Masato; Kawasaki, Keita; Sasaki, Wataru; Kubodera, Shoichi; Kikuchi, Takashi; Yugami, Noboru; Kawata, Shigeo; Andreev, Alexander A.

2005-03-01

Extreme ultraviolet (EUV) radiation at the wavelength of around 13nm waws observed from a laser-produced plasma using continuous water-jet. Strong dependence of the conversion efficiency (CE) on the laser focal spot size and jet diameter was observed. The EUV CE at a given laser spot size and jet diameter was further enhanced using double laser pulses, where a pre-pulse was used for initial heating of the plasma.

Extreme ultraviolet spectroscopy of low pressure helium microwave driven discharges

NASA Astrophysics Data System (ADS)

Espinho, Susana; Felizardo, Edgar; Tatarova, Elena; Alves, Luis Lemos

2016-09-01

Surface wave driven discharges are reliable plasma sources that can produce high levels of vacuum and extreme ultraviolet radiation (VUV and EUV). The richness of the emission spectrum makes this type of discharge a possible alternative source in EUV/VUV radiation assisted applications. However, due to challenging experimental requirements, publications concerning EUV radiation emitted by microwave plasmas are scarce and a deeper understanding of the main mechanisms governing the emission of radiation in this spectral range is required. To this end, the EUV radiation emitted by helium microwave driven plasmas operating at 2.45 GHz has been studied for low pressure conditions. Spectral lines from excited helium atoms and ions were detected via emission spectroscopy in the EUV/VUV regions. Novel data concerning the spectral lines observed in the 23 - 33 nm wavelength range and their intensity behaviour with variation of the discharge operational conditions are presented. The intensity of all the spectral emissions strongly increases with the microwave power delivered to the plasma up to 400 W. Furthermore, the intensity of all the ion spectral emissions in the EUV range decreases by nearly one order of magnitude as the pressure was raised from 0.2 to 0.5 mbar. Work funded by FCT - Fundacao para a Ciencia e a Tecnologia, under Project UID/FIS/50010/2013 and grant SFRH/BD/52412/2013 (PD-F APPLAuSE).

Recent solar extreme ultraviolet irradiance observations and modeling: A review

NASA Technical Reports Server (NTRS)

Tobiska, W. Kent

1993-01-01

For more than 90 years, solar extreme ultraviolet (EUV) irradiance modeling has progressed from empirical blackbody radiation formulations, through fudge factors, to typically measured irradiances and reference spectra was well as time-dependent empirical models representing continua and line emissions. A summary of recent EUV measurements by five rockets and three satellites during the 1980s is presented along with the major modeling efforts. The most significant reference spectra are reviewed and threee independently derived empirical models are described. These include Hinteregger's 1981 SERF1, Nusinov's 1984 two-component, and Tobiska's 1990/1991/SERF2/EUV91 flux models. They each provide daily full-disk broad spectrum flux values from 2 to 105 nm at 1 AU. All the models depend to one degree or another on the long time series of the Atmosphere Explorer E (AE-E) EUV database. Each model uses ground- and/or space-based proxies to create emissions from solar atmospheric regions. Future challenges in EUV modeling are summarized including the basic requirements of models, the task of incorporating new observations and theory into the models, the task of comparing models with solar-terrestrial data sets, and long-term goals and modeling objectives. By the late 1990s, empirical models will potentially be improved through the use of proposed solar EUV irradiance measurements and images at selected wavelengths that will greatly enhance modeling and predictive capabilities.

Distinct EUV minimum of the solar irradiance (16-40 nm) observed by SolACES spectrometers onboard the International Space Station (ISS) in August/September 2009

NASA Astrophysics Data System (ADS)

Nikutowski, B.; Brunner, R.; Erhardt, Ch.; Knecht, St.; Schmidtke, G.

2011-09-01

In the field of terrestrial climatology the continuous monitoring of the solar irradiance with highest possible accuracy is an important goal. SolACES as a part of the ESA mission SOLAR on the ISS is measuring the short-wavelength solar EUV irradiance from 16-150 nm. This data will be made available to the scientific community to investigate the impact of the solar irradiance variability on the Earth's climate as well as the thermospheric/ionospheric interactions that are pursued in the TIGER program. Since the successful launch with the shuttle mission STS-122 on February 7th, 2008, SolACES initially recorded the low EUV irradiance during the extended solar activity minimum. Thereafter it has been observing the EUV irradiance during the increasing solar activity with enhanced intensity and changing spectral composition. SolACES consists of three grazing incidence planar grating spectrometers. In addition there are two three-signal ionisation chambers, each with exchangeable band-pass filters to determine the absolute EUV fluxes repeatedly during the mission. One important problem of space-borne instrumentation recording the solar EUV irradiance is the degradation of the spectrometer sensitivity. The two double ionisation chambers of SolACES, which could be re-filled with three different gases for each recording, allow the recalibration of the efficiencies of the three SolACES spectrometers from time to time.

Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography

NASA Astrophysics Data System (ADS)

Madey, Theodore E.; Faradzhev, Nadir S.; Yakshinskiy, Boris V.; Edwards, N. V.

2006-12-01

One of the most promising methods for next generation device manufacturing is extreme ultraviolet (EUV) lithography, which uses 13.5 nm wavelength radiation generated from freestanding plasma-based sources. The short wavelength of the incident illumination allows for a considerable decrease in printed feature size, but also creates a range of technological challenges not present for traditional optical lithography. Contamination and oxidation form on multilayer reflecting optics surfaces that not only reduce system throughput because of the associated reduction in EUV reflectivity, but also introduce wavefront aberrations that compromise the ability to print uniform features. Capping layers of ruthenium, films ∼2 nm thick, are found to extend the lifetime of Mo/Si multilayer mirrors used in EUV lithography applications. However, reflectivities of even the Ru-coated mirrors degrade in time during exposure to EUV radiation. Ruthenium surfaces are chemically reactive and are very effective as heterogeneous catalysts. In the present paper we summarize the thermal and radiation-induced surface chemistry of bare Ru exposed to gases; the emphasis is on H2O vapor, a dominant background gas in vacuum processing chambers. Our goal is to provide insights into the fundamental physical processes that affect the reflectivity of Ru-coated Mo/Si multilayer mirrors exposed to EUV radiation. Our ultimate goal is to identify and recommend practices or antidotes that may extend mirror lifetimes.

An investigation of solar erythemal ultraviolet radiation at two sites in tourist attraction areas of Thailand

NASA Astrophysics Data System (ADS)

Buntoung, Sumaman; Pattarapanitchai, Somjet; Wattan, Rungrat; Masiri, Itsara; Promsen, Worrapass; Tohsing, Korntip; Janjai, Serm

2013-05-01

Islands on the southern coasts of Thailand are famous attractions for local and foreign tourists. Tourists usually expose their skins to solar radiation for tanning. Thus information on solar ultraviolet radiation (UV) is of importance for tourists to protect themselves from adverse effects of UV. In this work, solar erythemal ultraviolet radiation (EUV) at two touristic sites namely Samui island (9.451°N, 100.033°E) and Phuket island (8.104°N, 98.304°E) was investigated. In investigating EUV, broadband UV radiometers (Kipp & Zonen, model UVS-B-C) were installed at existing meteorological stations in Samui and Phuket islands. A one-year period of EUV data from these two sites was analyzed. The level of UV index at these sites was studied. The values of UV index higher than 12 at noon time of clear days are usually found in the summer at both sites. Seasonal variation of EUV at both sites was investigated. It was found that the tropical monsoons have strong influence on this variation. Finally, global broadband radiation measured at the sites was also used to establish a correlation between EUV and global broadband radiation. Higher correlation was found for the case of clear sky, as compared to the case of cloudy sky. The correlation obtained from this analysis can be used to estimate EUV from global broadband radiation at these two sites.

Spherical EUV and Plasma Spectrometer (seps) -a Monitor to Measure the Plasma and EUV Environment in Space

NASA Astrophysics Data System (ADS)

Brunner, Raimund; Schmidtke, Gerhard; Konz, Werner; Pfeffer, Wilfried

A low-cost monitor to measure the EUV and plasma environment in space is presented. The device consists of three (or more) isolated spheres, a metallic sphere, one or more highly trans-parent Inner Grids and Outer Grids. Each one is being connected to a sensitive floating elec-trometer. By setting different potentials to the grids as well as to the sphere and varying one or more of their voltages, measurements of spectral solar EUV irradiance (15-200 nm), of local plasma parameters such as electron and ion densities, electron energies and temperatures as well as ion compositions and debris events can be derived from the current recordings. This detector does not require any (solar) pointing device. The primary goal is to study the impact of solar activity events (e.g. CMEs) as well as subsequent reactions of the ionospheric/thermospheric systems (including space weather occurences). The capability of SEPS for measuring EUV pho-ton fluxes as well as plasma parameters in the energy range from 0 to +/-70 eV is demonstrated by laboratory measurements as performed in the IPM laboratory, at BESSY-PTB electron syn-chrotron in Berlin and at ESA/ESTEC plasma chamber. Based on the laboratory recording of plasma recombination EUV emission the sensor is suitable to detect also auroral and airglow radiations. -The state of the art in the development of this device is reported.

Laser-plasma extreme ultraviolet and soft X-ray sources based on a double stream gas puff target: interaction of the radiation pulses with matter

NASA Astrophysics Data System (ADS)

Bartnik, A.

2015-06-01

In this work a review of investigations concerning interaction of intense extreme ultraviolet (EUV) and soft X-ray (SXR) pulses with matter is presented. The investigations were performed using laser-produced plasma (LPP) EUV/SXR sources based on a double stream gas puff target. The sources are equipped with dedicated collectors allowing for efficient focusing of the EUV/SXR radiation pulses. Intense radiation in a wide spectral range, as well as a quasi-monochromatic radiation can be produced. In the paper different kinds of LPP EUV/SXR sources developed in the Institute of Optoelectronics, Military University of Technology are described. Radiation intensities delivered by the sources are sufficient for different kinds of interaction experiments including EUV/SXR induced ablation, surface treatment, EUV fluorescence or photoionized plasma creation. A brief review of the main results concerning this kind of experiments performed by author of the paper are presented. However, since the LPP sources cannot compete with large scale X-ray sources like synchrotrons, free electron lasers or high energy density plasma sources, it was indicated that some investigations not requiring extreme irradiation parameters can be performed using the small scale installations. Some results, especially concerning low temperature photoionized plasmas are very unique and could be hardly obtained using the large facilities.

Quantifying alignment effects in 3D coordinate measurement.

DOT National Transportation Integrated Search

2009-10-01

The use of fixtureless, non-contact coordinate measurement has become increasingly prevalent in manufacturing : problem solving. Manufacturers now routinely use measurement systems such as white light area scanners, photogrammetry, : laser trackers, ...

The Origin of the EUV Emission in Her X-1

NASA Technical Reports Server (NTRS)

Leahy, D. A.; Marshall, H.

1999-01-01

Her X-1 exhibits a strong orbital modulation of its EUV flux with a large decrease around time of eclipse of the neutron star, and a significant dip which appears at different orbital phases at different 35-day phases. We consider observations of Her X-1 in the EUVE by the Extreme Ultraviolet Explorer (EUVE), which includes data from 1995 near the end of the Short High state, and date from 1997 at the start of the Short High state. The observed EUV lightcurve has bright and faint phases. The bright phase can be explained as the low energy tail of the soft x-ray pulse. The faint phase emission has been modeled to understand its origin. We find: the x-ray heated surface of HZ Her is too cool to produce enough emission; the accretion disk does not explain the orbital modulation; however, reflection of x-rays off of HZ Her can produce the observed lightcurve with orbital eclipses. The dip can be explained by shadowing of the companion by the accretion disk. We discuss the constraints on the accretion disk geometry derived from the observed shadowing.

Detection of significant differences between absorption spectra of neutral helium and low temperature photoionized helium plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bartnik, A.; Wachulak, P.; Fiedorowicz, H.

2013-11-15

In this work, spectral investigations of photoionized He plasmas were performed. The photoionized plasmas were created by irradiation of helium stream, with intense pulses from laser-plasma extreme ultraviolet (EUV) source. The EUV source was based on a double-stream Xe/Ne gas-puff target irradiated with 10 ns/10 J Nd:YAG laser pulses. The most intense emission from the source spanned a relatively narrow spectral region below 20 nm, however, spectrally integrated intensity at longer wavelengths was also significant. The EUV radiation was focused onto a gas stream, injected into a vacuum chamber synchronously with the EUV pulse. The long-wavelength part of the EUVmore » radiation was used for backlighting of the photoionized plasmas to obtain absorption spectra. Both emission and absorption spectra in the EUV range were investigated. Significant differences between absorption spectra acquired for neutral helium and low temperature photoionized plasmas were demonstrated for the first time. Strong increase of intensities and spectral widths of absorption lines, together with a red shift of the K-edge, was shown.« less

Relationship between hard X-ray and EUV sources in solar flares

NASA Technical Reports Server (NTRS)

Kane, S. R.; Frost, K. J.; Donnelly, R. F.

1979-01-01

The high time resolution hard X-ray (not less than 15 keV) observations of medium and large impulsive solar flares made with the OSO 5 satellite are compared with the simultaneous ground-based observations of 10-1030 A EUV flux made via sudden frequency deviations (SFD) at Boulder. For most flares the agreement between the times of maxima of the impulsive hard X-ray and EUV emissions is found to be consistent with earlier studies (not less than 1 s). The rise and decay times of the EUV emission are larger than the corresponding times for X-rays not less than 30 keV. When OSO 5 hard X-ray measurements are combined with those made by OGO1, OGO 3, OGO 5, and TD 1A satellites, it is found that there is a nearly linear relationship between the energy fluxes of impulsive EUV emission and X-rays not less than 10 keV over a wide range of flare magnitudes. A model involving only a 'partial precipitation' of energetic electrons and consisting of both thick and thin target hard X-ray sources is examined.

Understanding and reduction of defects on finished EUV masks

NASA Astrophysics Data System (ADS)

Liang, Ted; Sanchez, Peter; Zhang, Guojing; Shu, Emily; Nagpal, Rajesh; Stivers, Alan

2005-05-01

To reduce the risk of EUV lithography adaptation for the 32nm technology node in 2009, Intel has operated a EUV mask Pilot Line since early 2004. The Pilot Line integrates all the necessary process modules including common tool sets shared with current photomask production as well as EUV specific tools. This integrated endeavor ensures a comprehensive understanding of any issues, and development of solutions for the eventual fabrication of defect-free EUV masks. Two enabling modules for "defect-free" masks are pattern inspection and repair, which have been integrated into the Pilot Line. This is the first time we are able to look at real defects originated from multilayer blanks and patterning process on finished masks over entire mask area. In this paper, we describe our efforts in the qualification of DUV pattern inspection and electron beam mask repair tools for Pilot Line operation, including inspection tool sensitivity, defect classification and characterization, and defect repair. We will discuss the origins of each of the five classes of defects as seen by DUV pattern inspection tool on finished masks, and present solutions of eliminating and mitigating them.

Overview of Key Results from SDO Extreme ultraviolet Variability Experiment (EVE)

NASA Astrophysics Data System (ADS)

Woods, Tom; Eparvier, Frank; Jones, Andrew; Mason, James; Didkovsky, Leonid; Chamberlin, Phil

2016-10-01

The SDO Extreme ultraviolet Variability Experiment (EVE) includes several channels to observe the solar extreme ultraviolet (EUV) spectral irradiance from 1 to 106 nm. These channels include the Multiple EUV Grating Spectrograph (MEGS) A, B, and P channels from the University of Colorado (CU) and the EUV SpectroPhometer (ESP) channels from the University of Southern California (USC). The solar EUV spectrum is rich in many different emission lines from the corona, transition region, and chromosphere. The EVE full-disk irradiance spectra are important for studying the solar impacts in Earth's ionosphere and thermosphere and are useful for space weather operations. In addition, the EVE observations, with its high spectral resolution of 0.1 nm and in collaboration with AIA solar EUV images, have proven valuable for studying active region evolution and explosive energy release during flares and coronal eruptions. These SDO measurements have revealed interesting results such as understanding the flare variability over all wavelengths, discovering and classifying different flare phases, using coronal dimming measurements to predict CME properties of mass and velocity, and exploring the role of nano-flares in continual heating of active regions.

The Extreme Ultraviolet Explorer Mission

NASA Technical Reports Server (NTRS)

Bowyer, S.; Malina, R. F.

1991-01-01

The Extreme Ultraviolet Explorer (EUVE) mission, currently scheduled from launch in September 1991, is described. The primary purpose of the mission is to survey the celestial sphere for astronomical sources of extreme ultraviolet (EUV) radiation with the use of three EUV telescope, each sensitive to a different segment of the EUV band. A fourth telescope is planned to perform a high-sensitivity search of a limited sample of the sky in the shortest wavelength bands. The all-sky survey is planned to be carried out in the first six months of the mission in four bands, or colors, 70-180 A, 170-250 A, 400-600 A, and 500-700 A. The second phase of the mission is devoted to spectroscopic observations of EUV sources. A high-efficiency grazing-incidence spectrometer using variable line-space gratings is planned to provide spectral data with about 1-A resolution. An end-to-end model of the mission, from a stellar source to the resulting scientific data, is presented. Hypothetical data from astronomical sources were processed through this model and are shown.

Nanoparticle contamination control for EUVL-technology: especially for photomasks in carriers and scanners

NASA Astrophysics Data System (ADS)

Fissan, Heinz; Asbach, Christof; Kuhlbusch, Thomas A. J.; Wang, Jing; Pui, David Y. H.; Yook, Se-Jin; Kim, Jung H.

2009-05-01

Extreme Ultraviolet Lithography (EUVL) is a leading lithography technology for the sub-32 nm chip manufacturing technology. Photomasks, in a mask carrier or inside a vacuum scanner, need to be protected from contamination by nanoparticles larger than the minimum feature size expected from this technology. The most critical part with respect to contamination in the EUVL-system is the photomask. The protection is made more difficult because protective pellicles cannot be used, due to the attenuation of the EUV beam by the pellicle. We have defined a set of protection schemes to protect EUVL photomasks from particle contamination and developed models to describe their effectiveness at atmospheric pressure (e.g. in mask carriers) or during scanning operation at low pressure. These schemes include that the mask is maintained facing down to avoid gravitational settling and the establishment of a thermal gradient underneath the mask surface to thermophoretically repel particles. Experimental verification studies of the models were carried out in atmospheric-pressure carriers and in a vacuum system down to about 3.3 Pa. Particles with sizes between 60 (for experiments, isn't it 125 nm?) nm and 250 nm were injected into the vacuum chamber with controlled speed and concentration to validate the analytical and numerical models. It could be shown that a deterministic approach using free molecular expressions can be used to accurately describe particle deposition at these low pressure levels. Thermophoresis was found to be very effective at both atmospheric and low pressure against the diffusional particle deposition, whereas inertial particle deposition of large and/or fast particles can likely not be prevented. A review of the models and their verification will be presented in this paper.

Optical computed tomography utilizing a rotating mirror and Fresnel lenses: operating principles and preliminary results

NASA Astrophysics Data System (ADS)

Xu, Y.; Wuu, Cheng-Shie

2013-02-01

The performance of a fast optical computed tomography (CT) scanner based on a point laser source, a small area photodiode detector, and two optical-grade Fresnel lenses is evaluated. The OCTOPUS™-10× optical CT scanner (MGS Research Inc., Madison, CT) is an upgrade of the OCTOPUS™ research scanner with improved design for faster motion of the laser beam and faster data acquisition process. The motion of the laser beam in the new configuration is driven by the rotational motion of a scanning mirror. The center of the scanning mirror and the center of the photodiode detector are adjusted to be on the focal points of two coaxial Fresnel lenses. A glass water tank is placed between the two Fresnel lenses to house gel phantoms and matching liquids. The laser beam scans over the water tank in parallel beam geometry for projection data as the scanning mirror rotates at a frequency faster than 0.1 s per circle. Signal sampling is performed independently of the motion of the scanning mirror, to reduce the processing time for the synchronization of the stepper motors and the data acquisition board. An in-house developed reference image normalization mechanism is added to the image reconstruction program to correct the non-uniform light transmitting property of the Fresnel lenses. Technical issues with regard to the new design of the scanner are addressed, including projection data extraction from raw data samples, non-uniform pixel averaging and reference image normalization. To evaluate the dosimetric accuracy of the scanner, the reconstructed images from a 16 MeV, 6 cm × 6 cm electron field irradiation were compared with those from the Eclipse treatment planning system (Varian Corporation, Palo Alto, CA). The spatial resolution of the scanner is demonstrated to be of sub-millimeter accuracy. The effectiveness of the reference normalization method for correcting the non-uniform light transmitting property of the Fresnel lenses is analyzed. A sub-millimeter accuracy of the phantom positioning between the reference scan and the actual scan is demonstrated to be essential. The fast scanner is shown to be able to scan gel phantoms with a wider field of view (5 mm from the edge of the scanned dosimeters) and at a speed 10 to 20 times faster than the OCTOPUS™ scanner. A large uncertainty of 5% (defined as the ratio of the standard deviation to the mean) is typically observed in the reconstructed images, owing to the inaccuracy in the phantom positioning process. Methods for further improvement of the accuracy of the in-house modified OCTOPUS™-10× scanner are discussed.

EUV Dimmings as a Diagnostic of CMEs and Related Phenomena

NASA Technical Reports Server (NTRS)

Thompson, Barbara J.; Mays, M. Leila; Webb, David F.; West, Matthew J.

2012-01-01

Large-scale coronal EUV dimmings, developing on timescaJes of minutes to hours in association with a flare or filament eruption, are known to exhibit a high correlation with coronal mass ejections. While most observations indicate that the decrease in emission in a dimming is due, at least in part, to a density decrease, a complete understanding requires us to examine at least four mechanisms that have been observed to cause darkened regions in the corona: 1) mass loss, 2) cooling, 3) heating, and 4) absorption/obscuration. Recent advances in automatic detection, observations with improved cadence and resolution, multi-viewpoint imaging, and spectroscopic studies have continued to shed light on dimming formation, evolution, and recovery. However, there are still some outstanding questions, including 1) Why do some CMEs show dimming and some do not? 2) What determines the location of a dimming? 3) What determines the temporal evolution of a dimming? 4) How does the post-eruption dimming connect to the ICME? 5) What is the relationship between dimmings and other CME-associated phenomena? The talk will emphasize the different formation mechanisms of dimmings and their relationship to CMEs and CME-associated phenomena.

Temperature Structure of a Coronal Cavity

NASA Technical Reports Server (NTRS)

Kucera, T. A.; Gibson, S. E.; Schmit, D. J.

2011-01-01

we analyze the temperature structure of a coronal cavity observed in Aug. 2007. coronal cavities are long, low-density structures located over filament neutral lines and are often seen as dark elliptical features at the solar limb in white light, EUV and x-rays. when these structures erupt they form the cavity portions of CMEs. It is important to establish the temperature structure of cavities in order to understand the thermodynamics of cavities in relation to their three-dimensional magnetic structure. To analyze the temperature we compare temperature ratios of a series of iron lines observed by the Hinode/EUv Imaging spectrometer (EIS). We also use those lines to constrain a forward model of the emission from the cavity and streamer. The model assumes a coronal streamer with a tunnel-like cavity with elliptical cross-section and a Gaussian variation of height along the tunnel lenth. Temperature and density can be varied as a function of altitude both in the cavity and streamer. The general cavity morphology and the cavity and streamer density have already been modeled using data from STEREO's SECCHI/EUVI and Hinode/EIS (Gibson et al 2010 and Schmit & Gibson 2011).

Evidences on the Existence of Magnetic Flux Rope Before and During a Solar Eruption

NASA Astrophysics Data System (ADS)

Zhang, Jie; Cheng, Xin; Liu, Kai

2013-03-01

We report the observational evidences from the advanced SDO observations that magnetic flux ropes exist before and during solar eruptions. The solar eruption is defined as coronal mass ejection, whether or not associated with a solar flare. Magnetic flux ropes are directly observed as hot EUV channels as seen in the hot AIA 131 (10 MK) and/or AIA 94 (6.4 MK) passbands, but are absent in cool AIA passbands. The fact that flux ropes are only seen in hot temperatures explains their evasion of detection from previous EUV observations, such as SOHO/EIT, TRACE and STEREO/EUVI. The hot channel usually appears as a writhed sigmoidal shape and slowly rises prior to the onset of the impulsive acceleration as well as the onset of the flare. The hot channel transforms into a CME-like semi-circular shape in a continuous way, indicating its trapping or organization by a coherent magnetic structure. The dynamic and thermal properties of flux ropes will also be presented. We further discuss the critical role of flux ropes in CME initiation and subsequent acceleration, in light of contrasting the standard eruptive flare models.

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

Improved spatial resolution in PET scanners using sampling techniques

PubMed Central

Surti, Suleman; Scheuermann, Ryan; Werner, Matthew E.; Karp, Joel S.

2009-01-01

Increased focus towards improved detector spatial resolution in PET has led to the use of smaller crystals in some form of light sharing detector design. In this work we evaluate two sampling techniques that can be applied during calibrations for pixelated detector designs in order to improve the reconstructed spatial resolution. The inter-crystal positioning technique utilizes sub-sampling in the crystal flood map to better sample the Compton scatter events in the detector. The Compton scatter rejection technique, on the other hand, rejects those events that are located further from individual crystal centers in the flood map. We performed Monte Carlo simulations followed by measurements on two whole-body scanners for point source data. The simulations and measurements were performed for scanners using scintillators with Zeff ranging from 46.9 to 63 for LaBr3 and LYSO, respectively. Our results show that near the center of the scanner, inter-crystal positioning technique leads to a gain of about 0.5-mm in reconstructed spatial resolution (FWHM) for both scanner designs. In a small animal LYSO scanner the resolution improves from 1.9-mm to 1.6-mm with the inter-crystal technique. The Compton scatter rejection technique shows higher gains in spatial resolution but at the cost of reduction in scanner sensitivity. The inter-crystal positioning technique represents a modest acquisition software modification for an improvement in spatial resolution, but at a cost of potentially longer data correction and reconstruction times. The Compton scatter rejection technique, while also requiring a modest acquisition software change with no increased data correction and reconstruction times, will be useful in applications where the scanner sensitivity is very high and larger improvements in spatial resolution are desirable. PMID:19779586

Comparison of the effects of 665 nm low level diode Laser Hat versus and a combination of 665 nm and 808nm low level diode Laser Scanner of hair growth in androgenic alopecia.

PubMed

Barikbin, Behrooz; Khodamrdi, Zeinab; Kholoosi, Leila; Akhgri, Mohammad Reza; Haj Abbasi, Majid; Hajabbasi, Mojgan; Razzaghi, Zahra; Akbarpour, Samaneh

2017-05-17

This study aimed to evaluate the effectiveness of a combined set of low level diode laser scanner (665 nm and 808nm) on hair growth, and assessment of safety and effectiveness of a new laser scanner on hair growth treatment procedure in androgenic alopecia. 90 patients (18 to 70 years) with androgenic alopecia were randomized into three groups. The first group (n=30) received 655 nm red light using laser hat, the second group (n=30) received 655 nm red laser plus 808 nm infrared laser using a laser scanner of hair growth device (with the patent number: 77733) and the third group (n=30) received no laser as the control group. Patients in laser scanner group had better results and showed a higher increase in terminal hair density compared with laser hat group (mean of 9.61 versus 9.16 per cm 2 ). We found significant decrease in terminal hair density from baseline in control group (mean -1.8 per cm 2 , p<0.0001). Results showed a statistically significant improvement in the laser scanner of the hair growth group compared with laser hat and the control group. The study showed that treatment with new laser devise had a promising result without any observable adverse effects.

Giga-pixel fluorescent imaging over an ultra-large field-of-view using a flatbed scanner.

PubMed

Göröcs, Zoltán; Ling, Yuye; Yu, Meng Dai; Karahalios, Dimitri; Mogharabi, Kian; Lu, Kenny; Wei, Qingshan; Ozcan, Aydogan

2013-11-21

We demonstrate a new fluorescent imaging technique that can screen for fluorescent micro-objects over an ultra-wide field-of-view (FOV) of ~532 cm(2), i.e., 19 cm × 28 cm, reaching a space-bandwidth product of more than 2 billion. For achieving such a large FOV, we modified the hardware and software of a commercially available flatbed scanner, and added a custom-designed absorbing fluorescent filter, a two-dimensional array of external light sources for computer-controlled and high-angle fluorescent excitation. We also re-programmed the driver of the scanner to take full control of the scanner hardware and achieve the highest possible exposure time, gain and sensitivity for detection of fluorescent micro-objects through the gradient index self-focusing lens array that is positioned in front of the scanner sensor chip. For example, this large FOV of our imaging platform allows us to screen more than 2.2 mL of undiluted whole blood for detection of fluorescent micro-objects within <5 minutes. This high-throughput fluorescent imaging platform could be useful for rare cell research and cytometry applications by enabling rapid screening of large volumes of optically dense media. Our results constitute the first time that a flatbed scanner has been converted to a fluorescent imaging system, achieving a record large FOV.

TH-CD-207B-12: Quantification of Clinical Feedback On Image Quality Differences Between Two CT Scanner Models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bache, S; Liu, X; Loyer, E

Purpose: This work sought to quantify a radiology team’s assessment of image quality differences between two CT scanner models currently in clinical use, with emphasis on noise and low-contrast detectability (LCD). Methods: A water phantom and a Kagaku anthropomorphic body phantom were scanned on GE Discovery CT750 HD and LightSpeed VCT scanners (4 each) with identical scan parameters and reconstructed to 2.5mm/5.0mm thicknesses. Images of water phantom were analyzed at the scanner console with a built-in LCD tool that uses statistical methods to compute requisite CT-number contrast for 95% confidence in detection of a user-defined object size. LCD value wasmore » computed for 5mm, 3mm, and 1mm objects. Analysis of standard deviation and LCD values were performed on Kagaku phantom images within liver, stomach, and spleen. LCD value was computed for 4mm, 3mm, and 1mm objects using a benchmarked MATLAB implementation of the GE scanner-console tool. Results: Water LCD values were larger (poorer performance) for all HD scanners compared to VCT scanners. Mean scanner model difference in requisite CT-number contrast for 5mm, 3mm, and 1mm objects for 5.0mm/2.5mm images was 3.0%/3.4% (p=0.02/p=0.10), 5.3%/5.7% (0.00002/0.02), and 8.5%/8.2% (0.0004/0.002), respectively. Mean standard deviations within Kagaku phantom ROIs were greater in HD compared to VCT images, with mean differences for the liver, stomach, and spleen for 5.0mm/2.5mm of 16%/12% (p=0.04/0.10), 8%/12% (0.15/0.11), and 16%/15% (0.05/0.11), respectively. Mean LCD value difference between HD and VCT scanners over all ROIs for 4mm, 3m, and 1mm objects and 5.0mm/2.5mm was 34%/9%, 16%/8%, and 18%/10%, respectively. HD scanners outperformed VCT scanners only for the 4mm stomach object. Conclusion: Using both water and anthropomorphic phantoms, it was shown that HD scanners are outperformed by VCT scanners with respect to noise and LCD in a consistent and in most cases statistically significant manner. The relationship between statistical and clinical significance demands further work.« less

Out of lab calibration of a rotating 2D scanner for 3D mapping

NASA Astrophysics Data System (ADS)

Koch, Rainer; Böttcher, Lena; Jahrsdörfer, Maximilian; Maier, Johannes; Trommer, Malte; May, Stefan; Nüchter, Andreas

2017-06-01

Mapping is an essential task in mobile robotics. To fulfil advanced navigation and manipulation tasks a 3D representation of the environment is required. Applying stereo cameras or Time-of-flight cameras (TOF cameras) are one way to archive this requirement. Unfortunately, they suffer from drawbacks which makes it difficult to map properly. Therefore, costly 3D laser scanners are applied. An inexpensive way to build a 3D representation is to use a 2D laser scanner and rotate the scan plane around an additional axis. A 3D point cloud acquired with such a custom device consists of multiple 2D line scans. Therefore the scanner pose of each line scan need to be determined as well as parameters resulting from a calibration to generate a 3D point cloud. Using external sensor systems are a common method to determine these calibration parameters. This is costly and difficult when the robot needs to be calibrated outside the lab. Thus, this work presents a calibration method applied on a rotating 2D laser scanner. It uses a hardware setup to identify the required parameters for calibration. This hardware setup is light, small, and easy to transport. Hence, an out of lab calibration is possible. Additional a theoretical model was created to test the algorithm and analyse impact of the scanner accuracy. The hardware components of the 3D scanner system are an HOKUYO UTM-30LX-EW 2D laser scanner, a Dynamixel servo-motor, and a control unit. The calibration system consists of an hemisphere. In the inner of the hemisphere a circular plate is mounted. The algorithm needs to be provided with a dataset of a single rotation from the laser scanner. To achieve a proper calibration result the scanner needs to be located in the middle of the hemisphere. By means of geometric formulas the algorithms determine the individual deviations of the placed laser scanner. In order to minimize errors, the algorithm solves the formulas in an iterative process. First, the calibration algorithm was tested with an ideal hemisphere model created in Matlab. Second, laser scanner was mounted differently, the scanner position and the rotation axis was modified. In doing so, every deviation, was compared with the algorithm results. Several measurement settings were tested repeatedly with the 3D scanner system and the calibration system. The results show that the length accuracy of the laser scanner is most critical. It influences the required size of the hemisphere and the calibration accuracy.

Cleaning process for EUV optical substrates

DOEpatents

Weber, Frank J.; Spiller, Eberhard A.

1999-01-01

A cleaning process for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.

Slowly varying component of extreme ultraviolet solar radiation and its relation to solar radio radiation

NASA Technical Reports Server (NTRS)

Chapman, R. D.; Neupert, W. M.

1974-01-01

A study of the correlations between solar EUV line fluxes and solar radio fluxes has been carried out. A calibration for the Goddard Space Flight Center EUV spectrum is suggested. The results are used to obtain an equation for the absolute EUV flux for several lines in the 150- to 400-A region and the total flux of 81 intense lines in the region, the 2800-MHz radio flux being used as independent variable.

Monitoring of solar far ultraviolet radiation from the OSO-5 satellite

NASA Technical Reports Server (NTRS)

Rense, W. A.; Parker, R.

1972-01-01

A spectrophotometer for monitoring the solar EUV in three broad wavelength bands is described. The kind of data obtained, along with sources of error, are presented. The content of the tape library which contains the data is outlined. The scientific results are discussed. These include the following: solar flares in the EUV, solar eclipse observations in the EUV, SFD's and relationship to solar flares, and the application of satellite sunrise and sunset data for the study of model upper atmospheres for the earth.

The creation of radiation dominated plasmas using laboratory extreme ultra-violet lasers

NASA Astrophysics Data System (ADS)

Tallents, G. J.; Wilson, S.; West, A.; Aslanyan, V.; Lolley, J.; Rossall, A. K.

2017-06-01

Ionization in experiments where solid targets are irradiated by high irradiance extreme ultra-violet (EUV) lasers is examined. Free electron degeneracy effects on ionization in the presence of a high EUV flux of radiation is shown to be important. Overlap of the physics of such plasmas with plasma material under compression in indirect inertial fusion is explored. The design of the focusing optics needed to achieve high irradiance (up to 1014 Wcm-2) using an EUV capillary laser is presented.

Relationship of EUV Irradiance Coronal Dimming Slope and Depth to Coronal Mass Ejection Speed and Mass

NASA Technical Reports Server (NTRS)

Mason, James Paul; Woods, Thomas N.; Webb, David F.; Thompson, Barbara J.; Colaninno, Robin C.; Vourlidas, Angelos

2016-01-01

Extreme ultraviolet (EUV) coronal dimmings are often observed in response to solar eruptive events. These phenomena can be generated via several different physical processes. For space weather, the most important of these is the temporary void left behind by a coronal mass ejection (CME). Massive, fast CMEs tend to leave behind a darker void that also usually corresponds to minimum irradiance for the cooler coronal emissions. If the dimming is associated with a solar are, as is often the case, the are component of the irradiance light curve in the cooler coronal emission can be isolated and removed using simultaneous measurements of warmer coronal lines. We apply this technique to 37dimming events identified during two separate two-week periods in 2011, plus an event on 2010 August 7 analyzed in a previous paper, to parameterize dimming in terms of depth and slope. We provide statistics on which combination of wavelengths worked best for the flare-removal method, describe the fitting methods applied to the dimming light curves, and compare the dimming parameters with corresponding CME parameters of mass and speed. The best linear relationships found are nu(sub CME) [km/s] approx. equals 2.36 x 10 6 [km/%] x s(sub dim) [%/s] m(sub CME) [g] approx. equals 2.59 x 10(exp.15 [g/%] x the square root of d(sub dim) [%].These relationships could be used for space weather operations of estimating CME mass and speed using near-real-time irradiance dimming measurements.

Starspot variability as an X-ray radiation proxy

NASA Astrophysics Data System (ADS)

Arkhypov, Oleksiy V.; Khodachenko, Maxim L.; Lammer, Helmut; Güdel, Manuel; Lüftinger, Teresa; Johnstone, Colin P.

2018-05-01

Stellar X-ray emission plays an important role in the study of exoplanets as a proxy for stellar winds and as a basis for the prediction of extreme ultraviolet (EUV) flux, unavailable for direct measurements, which in their turn are important factors for the mass-loss of planetary atmospheres. Unfortunately, the detection thresholds limit the number of stars with the directly measured X-ray fluxes. At the same time, the known connection between the sunspots and X-ray sources allows using of the starspot variability as an accessible proxy for the stellar X-ray emission. To realize this approach, we analysed the light curves of 1729 main-sequence stars with rotation periods 0.5 < P < 30 d and effective temperatures 3236 < Teff < 7166 K observed by the Kepler mission. It was found that the squared amplitude of the first rotational harmonic of a stellar light curve may be used as a kind of activity index. This averaged index revealed practically the same relation with the Rossby number as that in the case of the X-ray to bolometric luminosity ratio Rx. As a result, the regressions for stellar X-ray luminosity Lx(P, Teff) and its related EUV analogue LEUV were obtained for the main-sequence stars. It was shown that these regressions allow prediction of average (over the considered stars) values of log (Lx) and log (LEUV) with typical errors of 0.26 and 0.22 dex, respectively. This, however, does not include the activity variations in particular stars related to their individual magnetic activity cycles.

Well-defined EUV wave associated with a CME-driven shock

NASA Astrophysics Data System (ADS)

Cunha-Silva, R. D.; Selhorst, C. L.; Fernandes, F. C. R.; Oliveira e Silva, A. J.

2018-05-01

Aims: We report on a well-defined EUV wave observed by the Extreme Ultraviolet Imager (EUVI) on board the Solar Terrestrial Relations Observatory (STEREO) and the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO). The event was accompanied by a shock wave driven by a halo CME observed by the Large Angle and Spectrometric Coronagraph (LASCO-C2/C3) on board the Solar and Heliospheric Observatory (SOHO), as evidenced by the occurrence of type II bursts in the metric and dekameter-hectometric wavelength ranges. We investigated the kinematics of the EUV wave front and the radio source with the purpose of verifying the association between the EUV wave and the shock wave. Methods: The EUV wave fronts were determined from the SDO/AIA images by means of two appropriate directions (slices). The heights (radial propagation) of the EUV wave observed by STEREO/EUVI and of the radio source associated with the shock wave were compared considering the whole bandwidth of the harmonic lane of the radio emission, whereas the speed of the shock was estimated using the lowest frequencies of the harmonic lane associated with the undisturbed corona, using an appropriate multiple of the Newkirk (1961, ApJ, 133, 983) density model and taking into account the H/F frequency ratio fH/fF = 2. The speed of the radio source associated with the interplanetary shock was determined using the Mann et al. (1999, A&A, 348, 614) density model. Results: The EUV wave fronts determined from the SDO/AIA images revealed the coexistence of two types of EUV waves, a fast one with a speed of 560 km s-1, and a slower one with a speed of 250 km s-1, which corresponds approximately to one-third of the average speed of the radio source ( 680 km s-1). The radio signature of the interplanetary shock revealed an almost constant speed of 930 km s-1, consistent with the linear speed of the halo CME (950 km s-1) and with the values found for the accelerating coronal shock ( 535-823 km s-1), taking into account the gap between the radio emissions.

Electrophoresis Gel Quantification with a Flatbed Scanner and Versatile Lighting from a Screen Scavenged from a Liquid Crystal Display (LCD) Monitor

ERIC Educational Resources Information Center

Yeung, Brendan; Ng, Tuck Wah; Tan, Han Yen; Liew, Oi Wah

2012-01-01

The use of different types of stains in the quantification of proteins separated on gels using electrophoresis offers the capability of deriving good outcomes in terms of linear dynamic range, sensitivity, and compatibility with specific proteins. An inexpensive, simple, and versatile lighting system based on liquid crystal display backlighting is…

Development of a 1m-normal-incidence-EUV-Telescope

NASA Technical Reports Server (NTRS)

Grewing, M.; Kraemer, G.; Schulz-Luepertz, E.; Wulf-Mathies, C.; Bowyer, S.; Jacobsen, P.; Jelinsky, P.; Kimble, R.

1982-01-01

A brief description is given of the 1m-EUV-Telescope and its focal plane instrumentation, namely an EUV spectrometer and six EUV/FUV photometers. The telescope is scheduled for launch on an Aries rocket on June 17, 1982. The principal goals are the white dwarf HZ43 and a photometric scan across the sky in an area of the sky where 21 cm line observations reveal a steep density gradient. The optical bench of the telescope is a cylinder made of a graphite epoxy compound. Despite its low specific weight, the bench shows an excellent mechanical performance, with an elasticity modulus of approximately 70,000 N/cu mm. It is pointed out that by carefully combining layers with different winding angles of the carbon fiber, the thermal expansion along the cylinder axis is almost negligible, even under severe thermal loads

Inter-Comparison between July 24, 2014 EUV Data from NASA Sounding Rocket 36.289 and Concurrent Measurements from Orbital Solar Observatories

NASA Astrophysics Data System (ADS)

Didkovsky, L. V.; Wieman, S. R.; Judge, D. L.

2014-12-01

Sounding rocket mission NASA 36.289 Didkovsky provided solar EUV irradiance measurements from four instruments built at the USC Space Sciences Center: the Rare Gas Ionization Cell (RGIC), the Solar Extreme ultraviolet Monitor (SEM), the Dual Grating Spectrometer (DGS), and the Optics-Free Spectrometer (OFS), thus meeting the mission comprehensive success criteria. These sounding rocket data allow us to inter-compare the observed absolute EUV irradiance with the data taken at the same time from the SOHO and SDO solar observatories. The sounding rocket data from the two degradation-free instruments (DGS and OFS) can be used to verify the degradation rates of SOHO and SDO EUV channels and serve as a flight-proven prototypes for future improvements of degradation-free instrumentation for solar physics.

Design of the Extreme Ultraviolet Explorer long-wavelength grazing incidence telescope optics

NASA Technical Reports Server (NTRS)

Finley, David S.; Jelinsky, Patrick; Bowyer, Stuart; Malina, Roger F.

1988-01-01

Designing optics for photometry in the long-wavelength portion of the EUV spectrum (400-900) A) poses different problems from those arising for optics, operating shortward of 400 A. The available filter materials which transmit radiation longward of 400 A are also highly transparent at wavelengths shortward of 100 A. Conventional EUV optics, with grazing engles of less than about 10 deg, have very high throughput in the EUV, which persists to wavelengths shortward of 100 A. Use of such optics with the longer-wavelength EUV filters thus results in an unacceptably large soft X-ray leak. This problem is overcome by developing a mirror design with larger graze angles of not less than 20 deg, which has high throughput at wavelengths longer than 400 A but at the same time very little throughput shortward of 100 A.

Solar Cycle Variation of Microwave Polar Brightening and EUV Coronal Hole Observed by Nobeyama Radioheliograph and SDO/AIA

NASA Astrophysics Data System (ADS)

Kim, Sujin; Park, Jong-Yeop; Kim, Yeon-Han

2017-08-01

We investigate the solar cycle variation of microwave and extreme ultraviolet (EUV) intensity in latitude to compare microwave polar brightening (MPB) with the EUV polar coronal hole (CH). For this study, we used the full-sun images observed in 17 GHz of the Nobeyama Radioheliograph from 1992 July to 2016 November and in two EUV channels of the Atmospheric Imaging Assembly (AIA) 193 Å and 171 Å on the Solar Dynamics Observatory (SDO) from 2011 January to 2016 November. As a result, we found that the polar intensity in EUV is anti-correlated with the polar intensity in microwave. Since the depression of EUV intensity in the pole is mostly owing to the CH appearance and continuation there, the anti-correlation in the intensity implies the intimate association between the polar CH and the MPB. Considering the report of tet{gopal99} that the enhanced microwave brightness in the CH is seen above the enhanced photospheric magnetic field, we suggest that the pole area during the solar minimum has a stronger magnetic field than the quiet sun level and such a strong field in the pole results in the formation of the polar CH. The emission mechanism of the MPB and the physical link with the polar CH are not still fully understood. It is necessary to investigate the MPB using high resolution microwave imaging data, which can be obtained by the high performance large-array radio observatories such as the ALMA project.

Active galaxies observed during the Extreme Ultraviolet Explorer all-sky survey

NASA Technical Reports Server (NTRS)

Marshall, H. L.; Fruscione, A.; Carone, T. E.

1995-01-01

We present observations of active galactic nuclei (AGNs) obtained with the Extreme Ultraviolet Explorer (EUVE) during the all-sky survey. A total of 13 sources were detected at a significance of 2.5 sigma or better: seven Seyfert galaxies, five BL Lac objects, and one quasar. The fraction of BL Lac objects is higher in our sample than in hard X-ray surveys but is consistent with the soft X-ray Einstein Slew Survey, indicating that the main reason for the large number of BL Lac objects in the extreme ulktraviolet (EUV) and soft X-ray bands is their steeper X-ray spectra. We show that the number of AGNs observed in both the EUVE and ROSAT Wide Field Camera surveys can readily be explained by modelling the EUV spectra with a simple power law in the case of BL Lac objects and with an additional EUV excess in the case of Seyferts and quasars. Allowing for cold matter absorption in Seyfert galaxy hosts drive up the inferred average continuum slope to 2.0 +/- 0.5 (at 90% confidence), compared to a slope of 1.0 usually found from soft X-ray data. If Seyfert galaxies without EUV excesses form a significant fraction of the population, then the average spectrum of those with bumps should be even steeper. We place a conservative limit on neutral gas in BL Lac objects: N(sub H) less than 10(exp 20)/sq cm.

Light scattering in optical CT scanning of Presage dosimeters

NASA Astrophysics Data System (ADS)

Xu, Y.; Adamovics, J.; Cheeseborough, J. C.; Chao, K. S.; Wuu, C. S.

2010-11-01

The intensity of the scattered light from the Presage dosimeters was measured using a Thorlabs PM100D optical power meter (Thorlabs Inc, Newton, NJ) with an optical sensor of 1 mm diameter sensitive area. Five Presage dosimeters were made as cylinders of 15.2 cm, 10 cm, 4 cm diameters and irradiated with 6 MV photons using a Varian Clinac 2100EX. Each dosimeter was put into the scanning tank of an OCTOPUS" optical CT scanner (MGS Research Inc, Madison, CT) filled with a refractive index matching liquid. A laser diode was positioned at one side of the water tank to generate a stationary laser beam of 0.8 mm width. On the other side of the tank, an in-house manufactured positioning system was used to move the optical sensor in the direction perpendicular to the outgoing laser beam from the dosimeters at an increment of 1 mm. The amount of scattered photons was found to be more than 1% of the primary light signal within 2 mm from the laser beam but decreases sharply with increasing off-axis distance. The intensity of the scattered light increases with increasing light attenuations and/or absorptions in the dosimeters. The scattered light at the same off-axis distance was weaker for dosimeters of larger diameters and for larger detector-to-dosimeter distances. Methods for minimizing the effect of the light scattering in different types of optical CT scanners are discussed.

Marshall Grazing Incidence X-ray Spectrometer (MaGIXS) Slit-Jaw Imaging System

NASA Astrophysics Data System (ADS)

Wilkerson, P.; Champey, P. R.; Winebarger, A. R.; Kobayashi, K.; Savage, S. L.

2017-12-01

The Marshall Grazing Incidence X-ray Spectrometer is a NASA sounding rocket payload providing a 0.6 - 2.5 nm spectrum with unprecedented spatial and spectral resolution. The instrument is comprised of a novel optical design, featuring a Wolter1 grazing incidence telescope, which produces a focused solar image on a slit plate, an identical pair of stigmatic optics, a planar diffraction grating and a low-noise detector. When MaGIXS flies on a suborbital launch in 2019, a slit-jaw camera system will reimage the focal plane of the telescope providing a reference for pointing the telescope on the solar disk and aligning the data to supporting observations from satellites and other rockets. The telescope focuses the X-ray and EUV image of the sun onto a plate covered with a phosphor coating that absorbs EUV photons, which then fluoresces in visible light. This 10-week REU project was aimed at optimizing an off-axis mounted camera with 600-line resolution NTSC video for extremely low light imaging of the slit plate. Radiometric calculations indicate an intensity of less than 1 lux at the slit jaw plane, which set the requirement for camera sensitivity. We selected a Watec 910DB EIA charge-coupled device (CCD) monochrome camera, which has a manufacturer quoted sensitivity of 0.0001 lux at F1.2. A high magnification and low distortion lens was then identified to image the slit jaw plane from a distance of approximately 10 cm. With the selected CCD camera, tests show that at extreme low-light levels, we achieve a higher resolution than expected, with only a moderate drop in frame rate. Based on sounding rocket flight heritage, the launch vehicle attitude control system is known to stabilize the instrument pointing such that jitter does not degrade video quality for context imaging. Future steps towards implementation of the imaging system will include ruggedizing the flight camera housing and mounting the selected camera and lens combination to the instrument structure.

Next generation of Z* modelling tool for high intensity EUV and soft x-ray plasma sources simulations

NASA Astrophysics Data System (ADS)

Zakharov, S. V.; Zakharov, V. S.; Choi, P.; Krukovskiy, A. Y.; Novikov, V. G.; Solomyannaya, A. D.; Berezin, A. V.; Vorontsov, A. S.; Markov, M. B.; Parot'kin, S. V.

2011-04-01

In the specifications for EUV sources, high EUV power at IF for lithography HVM and very high brightness for actinic mask and in-situ inspections are required. In practice, the non-equilibrium plasma dynamics and self-absorption of radiation limit the in-band radiance of the plasma and the usable radiation power of a conventional single unit EUV source. A new generation of the computational code Z* is currently developed under international collaboration in the frames of FP7 IAPP project FIRE for modelling of multi-physics phenomena in radiation plasma sources, particularly for EUVL. The radiation plasma dynamics, the spectral effects of self-absorption in LPP and DPP and resulting Conversion Efficiencies are considered. The generation of fast electrons, ions and neutrals is discussed. Conditions for the enhanced radiance of highly ionized plasma in the presence of fast electrons are evaluated. The modelling results are guiding a new generation of EUV sources being developed at Nano-UV, based on spatial/temporal multiplexing of individual high brightness units, to deliver the requisite brightness and power for both lithography HVM and actinic metrology applications.

Design decisions from the history of the EUVE science payload

NASA Technical Reports Server (NTRS)

Marchant, W.

1993-01-01

Some of the design issues that arose during the development of the EUVE science payload and solutions to the problems involved are examined. In particular, attention is given to the use of parallel and serial busses, the selection of the the ROM approach for software storage and execution, implementation of memory error detection and correction, and the selection of command structures. The early design decisions paid off in the timely delivery of the scientific payload and in the successful completion of the survey phase of the EUVE science mission.

Design decisions from the history of the EUVE science payload

NASA Astrophysics Data System (ADS)

Marchant, W.

1993-09-01

Some of the design issues that arose during the development of the EUVE science payload and solutions to the problems involved are examined. In particular, attention is given to the use of parallel and serial busses, the selection of the the ROM approach for software storage and execution, implementation of memory error detection and correction, and the selection of command structures. The early design decisions paid off in the timely delivery of the scientific payload and in the successful completion of the survey phase of the EUVE science mission.

Laboratory Studies in UV and EUV Solar Physics

NASA Technical Reports Server (NTRS)

Parkinson, William

2003-01-01

The Ion Beam Experiment at the Center for Astrophysics is dedicated to the study of ion-electron collision processes of importance in solar physics. A paper describing our most recent measurement 'Absolute cross section for Si(2+)(3s3p(sup 3)Rho (sup 0) yields 3s3p(sup 1)Rho(sup 0)) electron-impact excitation' was published during the past year. Dr. Paul Janzen received his PhD. from the Harvard Physics Department on the basis of this and other work, such as the new electron cyclotron resonance (ECR) ion source. The ion source is producing stable beams with large currents for our present work on C(2+), and it also produces stable beams with large currents of more highly charged systems, for future work on systems such as O(4+). The past year has been focussed on our current program to measure absolute cross sections for Electron Impact Excitation (EIE) in C(2+), one of the primary ions used for probing the solar transition region. C(2+) beams produced by the ion source have been transported to the interaction region of the experiment, where the collisions are studied, and Visiting Scientist Dr. Adrian Daw is currently collecting data to measure the C(2+)(2s2p(sup 3)Rho(sup 0) yields 2p(sup 2)(sup 3)Rho) EIE cross section as a function of collision energy, under the guidance of Drs. John Kohl, Larry Gardner and Bill Parkinson. Also this year, modifications were made to the ECR ion source in order to produce greater currents of highly charged ions. Testing of the ion source was completed. Modifications were designed to extend the photon detection capabilities of the apparatus to shorter UV wavelengths, or EUV. Following the work on C(2+)(2s2p(sup 3)Pho(sup 0) yields 2p(sup 2)(sup 3)Rho), the extended UV detection capabilities will be used to measure the C(2+)(2s(sup 2)(sup 1)S yields 2s2p(sup 1)Rho(sup 0)) EIE cross section. The EUV modifications complement those of the new ion source, by enabling detection of EUV light generated by high charge state ions and putting us in a position to measure the excitation cross sections for more highly charged ions as well.

Statistical and observational research of solar flare for total spectra and geometrical features

NASA Astrophysics Data System (ADS)

Nishimoto, S.; Watanabe, K.; Imada, S.; Kawate, T.; Lee, K. S.

2017-12-01

Impulsive energy release phenomena such as solar flares, sometimes affect to the solar-terrestrial environment. Usually, we use soft X-ray flux (GOES class) as the index of flare scale. However, the magnitude of effect to the solar-terrestrial environment is not proportional to that scale. To identify the relationship between solar flare phenomena and influence to the solar-terrestrial environment, we need to understand the full spectrum of solar flares. There is the solar flare irradiance model named the Flare Irradiance Spectral Model (FISM) (Chamberlin et al., 2006, 2007, 2008). The FISM can estimate solar flare spectra with high wavelength resolution. However, this model can not express the time evolution of emitted plasma during the solar flare, and has low accuracy on short wavelength that strongly effects and/or controls the total flare spectra. For the purpose of obtaining the time evolution of total solar flare spectra, we are performing statistical analysis of the electromagnetic data of solar flares. In this study, we select solar flare events larger than M-class from the Hinode flare catalogue (Watanabe et al., 2012). First, we focus on the EUV emission observed by the SDO/EVE. We examined the intensities and time evolutions of five EUV lines of 55 flare events. As a result, we found positive correlation between the "soft X-ray flux" and the "EUV peak flux" for all EVU lines. Moreover, we found that hot lines peaked earlier than cool lines of the EUV light curves. We also examined the hard X-ray data obtained by RHESSI. When we analyzed 163 events, we found good correlation between the "hard X-ray intensity" and the "soft X-ray flux". Because it seems that the geometrical features of solar flares effect to those time evolutions, we also looked into flare ribbons observed by SDO/AIA. We examined 21 flare events, and found positive correlation between the "GOES duration" and the "ribbon length". We also found positive correlation between the "ribbon length" and the "ribbon distance", however, there was no remarkable correlation of the "ribbon width". To understand physical process of flare emission, we performed numerical simulation (Imada et al., 2015), and compared with the observational flare model. We also discuss the flare numerical model which can be fitted to the observational flare model.

Ophthalmological OCT measuring arm design

NASA Astrophysics Data System (ADS)

Xu, Xiaonan; Gao, Jiansong; Guo, Jihua; Xue, Ping

2002-06-01

This paper presents a novel ophthamological optical coherence tomography detecting instrument that we design and introduces measuring arm emphatically. For the glaucoma is very common in the orient, this system can achieve both the eyeground detection and the canthus detection. And it combines the cranny lamp's conventional detection with optical coherence tomography. In order to gain the best resolution and the largest scanning range in the OCT detection, we find the optical system should obey these principles in the measuring arm design: (i) the parallel light from the collimator goes through the lens and focuses on the slot of the cranny lamp. The movement of the scanning point produced by the scanner is carrying on along the slot. (Ii) In the whole light route, the scanner images on the laser object lens of the OCT. The center light of the infrared goes through the center of the object lens all the time. Considering all the system, this design has a longitudinal resolution of 15micrometers , and a transverse resolution of 20micrometers at imaging velocity of 4 frames per second.

Direct quantitative evaluation of disease symptoms on living plant leaves growing under natural light.

PubMed

Matsunaga, Tomoko M; Ogawa, Daisuke; Taguchi-Shiobara, Fumio; Ishimoto, Masao; Matsunaga, Sachihiro; Habu, Yoshiki

2017-06-01

Leaf color is an important indicator when evaluating plant growth and responses to biotic/abiotic stress. Acquisition of images by digital cameras allows analysis and long-term storage of the acquired images. However, under field conditions, where light intensity can fluctuate and other factors (shade, reflection, and background, etc.) vary, stable and reproducible measurement and quantification of leaf color are hard to achieve. Digital scanners provide fixed conditions for obtaining image data, allowing stable and reliable comparison among samples, but require detached plant materials to capture images, and the destructive processes involved often induce deformation of plant materials (curled leaves and faded colors, etc.). In this study, by using a lightweight digital scanner connected to a mobile computer, we obtained digital image data from intact plant leaves grown in natural-light greenhouses without detaching the targets. We took images of soybean leaves infected by Xanthomonas campestris pv. glycines , and distinctively quantified two disease symptoms (brown lesions and yellow halos) using freely available image processing software. The image data were amenable to quantitative and statistical analyses, allowing precise and objective evaluation of disease resistance.

Simultaneous MRI and PET imaging of a rat brain

NASA Astrophysics Data System (ADS)

Raylman, Raymond R.; Majewski, Stan; Lemieux, Susan K.; Sendhil Velan, S.; Kross, Brian; Popov, Vladimir; Smith, Mark F.; Weisenberger, Andrew G.; Zorn, Carl; Marano, Gary D.

2006-12-01

Multi-modality imaging is rapidly becoming a valuable tool in the diagnosis of disease and in the development of new drugs. Functional images produced with PET fused with anatomical structure images created by MRI will allow the correlation of form with function. Our group is developing a system to acquire MRI and PET images contemporaneously. The prototype device consists of two opposed detector heads, operating in coincidence mode. Each MRI-PET detector module consists of an array of LSO detector elements coupled through a long fibre optic light guide to a single Hamamatsu flat panel position-sensitive photomultiplier tube (PSPMT). The use of light guides allows the PSPMTs to be positioned outside the bore of a 3T MRI scanner where the magnetic field is relatively small. To test the device, simultaneous MRI and PET images of the brain of a male Sprague Dawley rat injected with FDG were successfully obtained. The images revealed no noticeable artefacts in either image set. Future work includes the construction of a full ring PET scanner, improved light guides and construction of a specialized MRI coil to permit higher quality MRI imaging.

Solar EUV Irradiance Measurements by the Auto-Calibrating EUV Spectrometers (SolACES) Aboard the International Space Station (ISS)

NASA Astrophysics Data System (ADS)

Schmidtke, G.; Nikutowski, B.; Jacobi, C.; Brunner, R.; Erhardt, C.; Knecht, S.; Scherle, J.; Schlagenhauf, J.

2014-05-01

SolACES is part of the ESA SOLAR ISS mission that started aboard the shuttle mission STS-122 on 7 February 2008. The instrument has recorded solar extreme ultraviolet (EUV) irradiance from 16 to 150 nm during the extended solar activity minimum and the beginning solar cycle 24 with rising solar activity and increasingly changing spectral composition. The SOLAR mission has been extended from a period of 18 months to > 8 years until the end of 2016. SolACES is operating three grazing incidence planar grating spectrometers and two three-current ionization chambers. The latter ones are considered as primary radiometric detector standards. Re-filling the ionization chambers with three different gases repeatedly and using overlapping band-pass filters, the absolute EUV fluxes are derived in these spectral intervals. This way the serious problem of continuing efficiency changes in space-borne instrumentation is overcome during the mission. Evaluating the three currents of the ionization chambers, the overlapping spectral ranges of the spectrometers and of the filters plus inter-comparing the results from the EUV photon absorption in the gases with different absorption cross sections, there are manifold instrumental possibilities to cross-check the results providing a high degree of reliability to the spectral irradiance derived. During the mission a very strong up-and-down variability of the spectrometric efficiency by orders of magnitude is observed. One of the effects involved is channeltron degradation. However, there are still open questions on other effects contributing to these changes. A survey of the measurements carried out and first results of the solar spectral irradiance (SSI) data are presented. Inter-comparison with EUV data from other space missions shows good agreement such that the international effort has started to elaborate a complete set of EUV-SSI data taking into account all data available from 2008 to 2013.

Effect of the Solar UV/EUV Heating on the Intensity and Spatial Distribution of Jupiter's Synchrotron Radiation

NASA Astrophysics Data System (ADS)

Kita, Hajime; Misawa, H.; Tsuchiya, F.; Tao, C.; Morioka, A.

2012-10-01

Jupiter's synchrotron radiation (JSR) is the emission from relativistic electrons, and it is the most effective probe for remote sensing of Jupiter's radiation belt from the Earth. Recent observations reveal short term variations of JSR with the time scale of days to weeks. Brice and McDonough (1973) proposed that the solar UV/EUV heating for Jupiter's upper atmosphere causes enhancement of total flux density. If such a process occurs at Jupiter, it is also expected that diurnal wind system produces dawn-dusk asymmetry of the JSR brightness distribution. Preceding studies confirmed that the short term variations in total flux density correspond to the solar UV/EUV. However, the effect of solar UV/EUV heating on the brightness distribution has not been confirmed. Hence, the purpose of this study is to confirm the solar UV/EUV heating effect on total flux density and brightness distribution. We made radio imaging analysis using the National Radio Astronomy Observatory (NRAO) archived data of the Very Large Array (VLA) obtained in 2000, and following results were shown. 1, Total flux density varied corresponding to the solar UV/EUV. 2, Dawn side emission was brighter than dusk side emission almost every day. 3, Variations of the dawn-dusk asymmetry did not correspond to the solar UV/EUV. In order to explain the second result, we estimate the diurnal wind velocity from the observed dawn-dusk ratio by using the model brightness distribution of JSR. Estimated neutral wind velocity is 46+/-11 m/s, which reasonably corresponds to the numerical simulation of Jupiter's upper atmosphere. In order to explain the third result, we examined the effect of the global convection electric field driven by tailward outflow of plasma in Jupiter's magnetosphere. As the result, it is suggested that typical fluctuation of the convection electric field strength was enough to cause the observed variations of the dawn-dusk asymmetry.

Simultaneous ASCA and EUVE Observations of Capella

NASA Astrophysics Data System (ADS)

Brickhouse, N. S.; Dupree, A. K.; Edgar, R. J.; Drake, S. A.; White, N. E.; Liedahl, D. A.; Singh, K. P.

1997-05-01

We present simultaneous observations taken in Mar 1996 of the bright stellar coronal source Capella (HD 34029) with the ASCA and EUVE satellites. Previous EUVE observations of Fe emission lines (Fe VIII --- XXIV, excluding XVII) revealed a narrow emission measure feature at 6 x 10(6) K, which has proven to be remarkably stable over several years (flux from Fe XVIII and XIX has not varied by more than 30%), while lines formed at higher temperatures have shown intensity variations up to factors of 4. Furthermore, extremely high signal-to-noise spectra obtained by summing all EUVE measurements show that the Fe/H abundance ratio is consistent with solar photospheric. (See Dupree et al. 1993, ApJ, 418, L41; Brickhouse, Raymond, & Smith 1995, ApJSupp, 97, 551; Brickhouse 1996, IAU Coll. 152, Astrophysics in the Extreme Ultraviolet, Bowyer & Malina, eds (Kluwer), 141.) Meanwhile, the ASCA data of Capella have proven notoriously difficult to analyze. The performance verification (PV) phase data suggested a somewhat subsolar Fe abundance, but models were in poor agreement with the data (chi (2red) ~ 6). (See Drake 1996, Conf. on Cosmic Abundances, U. Maryland). Since the emission lines observed by EUVE are formed at the same emitting temperatures as the X-ray spectrum (Capella is ``soft'' such that very little flux is observed above 2 keV), the emission measure distribution derived from EUVE lines should provide a direct prediction of the X-ray spectrum, with only the relative abundances of species other than Fe as free parameters. Like the PV data, the new ASCA spectrum is not well fit by any of the standard models. Applying the constraints imposed by EUVE does not make a major improvement in the fit --- multi-thermal, variable abundance models such as Raymond-Smith and MEKAL do not provide any acceptable fit (chi (2red) > 5). We discuss our efforts to understand the X-ray spectrum, including studies of the uncertainties in the atomic data and of the underlying assumptions of the source models.

Development of a compact optical MEMS scanner with integrated VCSEL light source and diffractive optics

NASA Astrophysics Data System (ADS)

Krygowski, Thomas W.; Reyes, David; Rodgers, M. Steven; Smith, James H.; Warren, Mial E.; Sweatt, William C.; Blum-Spahn, Olga; Wendt, Joel R.; Asbill, Randolph E.

1999-09-01

In this work the design and initial fabrication results are reported for the components of a compact optical-MEMS laser scanning system. This system integrates a silicon MEMS laser scanner, a Vertical Cavity Surface Emitting Laser (VCSEL) and passive optical components. The MEMS scanner and VCSEL are mounted onto a fused silica substrate which serves as an optical interconnect between the devices. Two Diffractive Optical Elements (DOE's) are etched into the fused silica substrate to focus the VCSEL beam and increase the scan range. The silicon MEMS scanner consists of an actuator that continuously scans the position of a large polysilicon gold- coated shuttle containing a third DOE. Interferometric measurements show that the residual stress in the 50 micrometer X 1000 micrometer shuttle is extremely low, with a maximum deflection of only 0.18 micrometer over an 800 micrometer span for an unmetallized case and a deflection of 0.56 micrometer for the metallized case. A conservative estimate for the scan range is approximately plus or minus 4 degrees, with a spot size of about 0.5 mm, producing 50 resolvable spots. The basic system architecture, optical and MEMS design is reported in this paper, with an emphasis on the design and fabrication of the silicon MEMS scanner portion of the system.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herfst, Rodolf; Dekker, Bert; Witvoet, Gert

One of the major limitations in the speed of the atomic force microscope (AFM) is the bandwidth of the mechanical scanning stage, especially in the vertical (z) direction. According to the design principles of “light and stiff” and “static determinacy,” the bandwidth of the mechanical scanner is limited by the first eigenfrequency of the AFM head in case of tip scanning and by the sample stage in terms of sample scanning. Due to stringent requirements of the system, simply pushing the first eigenfrequency to an ever higher value has reached its limitation. We have developed a miniaturized, high speed AFMmore » scanner in which the dynamics of the z-scanning stage are made insensitive to its surrounding dynamics via suspension of it on specific dynamically determined points. This resulted in a mechanical bandwidth as high as that of the z-actuator (50 kHz) while remaining insensitive to the dynamics of its base and surroundings. The scanner allows a practical z scan range of 2.1 μm. We have demonstrated the applicability of the scanner to the high speed scanning of nanostructures.« less

Designing a Small-Sized Engineering Model of Solar EUV Telescopr for a Korean Satellite

NASA Astrophysics Data System (ADS)

Han, Jung-Hoon; Jang, Min-Hwan; Kim, Sang-Joon

2001-11-01

For the research of solar EUV (extreme ultraviolet) radiation, we have designed a small-sized engineering model of solar EUV telescope, which is suitable for a Korean satellite. The EUV solar telescope was designed to observe the sun at 584.3Å (He¥°) and 629.7Å (O¥´). The optical system is an f/8 Ritchey-Chrètien, and the effective diameter and focal length are 80§® and 640§®, respectively. The He¥°and O¥´ filters are loaded in a filter wheel. In the detection part, the MCP (MicroChannel Plate) type is Z-stack, and the channel-to-diameter ratio is 40:1. MCP and CCD are connected by fiber optic taper. A commercial optical design software is used for the analysis of the optical system design.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Laser-induced extreme UV radiation sources for manufacturing next-generation integrated circuits

NASA Astrophysics Data System (ADS)

Borisov, V. M.; Vinokhodov, A. Yu; Ivanov, A. S.; Kiryukhin, Yu B.; Mishchenko, V. A.; Prokof'ev, A. V.; Khristoforov, O. B.

2009-10-01

The development of high-power discharge sources emitting in the 13.5±0.135-nm spectral band is of current interest because they are promising for applications in industrial EUV (extreme ultraviolet) lithography for manufacturing integrated circuits according to technological precision standards of 22 nm and smaller. The parameters of EUV sources based on a laser-induced discharge in tin vapours between rotating disc electrodes are investigated. The properties of the discharge initiation by laser radiation at different wavelengths are established and the laser pulse parameters providing the maximum energy characteristics of the EUV source are determined. The EUV source developed in the study emits an average power of 276 W in the 13.5±0.135-nm spectral band on conversion to the solid angle 2π sr in the stationary regime at a pulse repetition rate of 3000 Hz.

Development of Laser Scanner for Full Cross-Sectional Deformation Monitoring of Underground Gateroads

PubMed Central

Yang, Qianlong; Zhang, Zhenyu; Liu, Xiaoqian; Ma, Shuqi

2017-01-01

The deformation of underground gateroads tends to be asymmetric and complex. Traditional instrumentation fails to accurately and conveniently monitor the full cross-sectional deformation of underground gateroads. Here, a full cross-sectional laser scanner was developed, together with a visualization software package. The developed system used a polar coordinate measuring method and the full cross-sectional measurement was shown by 360° rotation of a laser sensor driven by an electrical motor. Later on, the potential impact of gateroad wall flatness, roughness, and geometrical profile, as well as coal dust environment on the performance of the developed laser scanner will be evaluated. The study shows that high-level flatness is favorable in the application of the developed full cross-sectional deformation monitoring system. For a smooth surface of gateroad, the sensor cannot receive reflected light when the incidence angle of laser beam is large, causing data loss. Conversely, the roughness surface shows its nature as the diffuse reflection light can be received by the sensor. With regards to coal dust in the measurement environment, fine particles of floating coal dust in the air can lead to the loss of measurement data to some extent, due to scattering of the laser beam. PMID:28590449

Comparison between two non-contact techniques for art digitalization

NASA Astrophysics Data System (ADS)

Bianconi, F.; Catalucci, S.; Filippucci, M.; Marsili, R.; Moretti, M.; Rossi, G.; Speranzini, E.

2017-08-01

Many measurements techniques have been proposed for the “digitalization of objects”: structured light 3D scanner, laser scanner, high resolution camera, depth cam, thermal-cam, … Since the adoption of the European Agenda for Culture in 2007, heritage has been a priority for the Council’s work plans for culture, and cooperation at European level has advanced through the Open Method of Coordination. Political interest at EU level has steadily grown cultural and heritage stakeholders recently highlighted in the Declaration on a New Narrative for Europe: “Europe as a political body needs to recognize the value of Cultural Heritage”. Photomodelling is an innovative and extremely economical technique related to the conservation of Cultural Heritage, which leads to the creation of three-dimensional models starting from simple photographs. The aim of the research is to understand the full potential offered by this new technique and dedicated software, analysing the reliability of each instrument, with particular attention to freeware ones. An analytical comparison between photomodelling and structured light 3D scanner guarantees a first measure of the reliability of instruments, tested in the survey of several Umbrian heritage artefacts. The comparison between tests and reference models is explained using different algorithms and criteria, spatial, volumetric and superficial.

Thermally induced light-driven microfluidics using a MOEMS-based laser scanner for particle manipulation

NASA Astrophysics Data System (ADS)

Kremer, Matthias P.; Tortschanoff, Andreas

2014-03-01

One key challenge in the field of microfluidics and lab-on-a-chip experiments for biological or chemical applications is the remote manipulation of fluids, droplets and particles. These can be volume elements of reactants, particles coated with markers, cells or many others. Light-driven microfluidics is one way of accomplishing this challenge. In our work, we manipulated micrometre sized polystyrene beads in a microfluidic environment by inducing thermal flows. Therefore, the beads were held statically in an unstructured microfluidic chamber, containing a dyed watery solution. Inside this chamber, the beads were moved along arbitrary trajectories on a micrometre scale. The experiments were performed, using a MOEMS (micro-opto-electro-mechanical-systems)-based laser scanner with a variable focal length. This scanner system is integrated in a compact device, which is flexibly applicable to various microscope setups. The device utilizes a novel approach for varying the focal length, using an electrically tunable lens. A quasi statically driven MOEMS mirror is used for beam steering. The combination of a tunable lens and a dual axis micromirror makes the device very compact and robust and is capable of positioning the laser focus at any arbitrary location within a three dimensional working space. Hence, the developed device constitutes a valuable extension to manually executed microfluidic lab-on-chip experiments.

Reconstruction of Solar Extreme Ultraviolet Flux 1740 - 2015

NASA Astrophysics Data System (ADS)

Svalgaard, Leif

2016-11-01

Solar extreme ultraviolet (EUV) radiation creates the conducting E-layer of the ionosphere, mainly by photo-ionization of molecular oxygen. Solar heating of the ionosphere creates thermal winds, which by dynamo action induce an electric field driving an electric current having a magnetic effect observable on the ground, as was discovered by G. Graham in 1722. The current rises and falls with the Sun, and thus causes a readily observable diurnal variation of the geomagnetic field, allowing us to deduce the conductivity and thus the EUV flux as far back as reliable magnetic data reach. High-quality data go back to the "Magnetic Crusade" of the 1830s and less reliable, but still usable, data are available for portions of the 100 years before that. J.R. Wolf and, independently, J.-A. Gautier discovered the dependence of the diurnal variation on solar activity, and today we understand and can invert that relationship to construct a reliable record of the EUV flux from the geomagnetic record. We compare that to the F_{10.7} flux and the sunspot number, and we find that the reconstructed EUV flux reproduces the F_{10.7} flux with great accuracy. On the other hand, it appears that the Relative Sunspot Number as currently defined is beginning to no longer be a faithful representation of solar magnetic activity, at least as measured by the EUV and related indices. The reconstruction suggests that the EUV flux reaches the same low (but non-zero) value at every sunspot minimum (possibly including Grand Minima), representing an invariant "solar magnetic ground state".

Overlying extreme-ultraviolet arcades preventing eruption of a filament observed by AIA/SDO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Huadong; Ma, Suli; Zhang, Jun, E-mail: hdchen@upc.edu.cn

2013-11-20

Using the multi-wavelength data from the Atmospheric Imaging Assembly/Solar Dynamic Observatory (AIA/SDO) and the Sun Earth Connection Coronal and Heliospheric Investigation/Solar Terrestrial Relations Observatory (SECCHI/STEREO), we report a failed filament eruption in NOAA AR 11339 on 2011 November 3. The eruption was associated with an X1.9 flare, but without any coronal mass ejection (CME), coronal dimming, or extreme ultraviolet (EUV) waves. Some magnetic arcades above the filament were observed distinctly in EUV channels, especially in the AIA 94 Å and 131 Å wavebands, before and during the filament eruption process. Our results show that the overlying arcades expanded along withmore » the ascent of the filament at first until they reached a projected height of about 49 Mm above the Sun's surface, where they stopped. The following filament material was observed to be confined by the stopped EUV arcades and not to escape from the Sun. After the flare, a new filament formed at the low corona where part of the former filament remained before its eruption. These results support that the overlying arcades play an important role in preventing the filament from successfully erupting outward. We also discuss in this paper the EUV emission of the overlying arcades during the flare. It is rare for a failed filament eruption to be associated with an X1.9 class flare, but not with a CME or EUV waves. Therefore, this study also provides valuable insight into the triggering mechanism of the initiation of CMEs and EUV waves.« less

Quasi-periodic Fast-mode Wave Trains Within a Global EUV Wave and Sequential Transverse Oscillations Detected by SDO-AIA

NASA Technical Reports Server (NTRS)

Liu, Wei; Ofman, Leon; Nitta, Nariaki; Aschwanden, Markus J.; Schrijver, Carolus J.; Title, Alan M.; Tarbell, Theodore D.

2012-01-01

We present the first unambiguous detection of quasi-periodic wave trains within the broad pulse of a global EUV wave (so-called EIT wave) occurring on the limb. These wave trains, running ahead of the lateral coronal mass ejection (CME) front of 2-4 times slower, coherently travel to distances greater than approximately solar radius/2 along the solar surface, with initial velocities up to 1400 kilometers per second decelerating to approximately 650 kilometers per second. The rapid expansion of the CME initiated at an elevated height of 110 Mm produces a strong downward and lateral compression, which may play an important role in driving the primary EUV wave and shaping its front forwardly inclined toward the solar surface. The wave trains have a dominant 2 minute periodicity that matches the X-ray flare pulsations, suggesting a causal connection. The arrival of the leading EUV wave front at increasing distances produces an uninterrupted chain sequence of deflections and/or transverse (likely fast kink mode) oscillations of local structures, including a flux-rope coronal cavity and its embedded filament with delayed onsets consistent with the wave travel time at an elevated (by approximately 50%) velocity within it. This suggests that the EUV wave penetrates through a topological separatrix surface into the cavity, unexpected from CME-caused magnetic reconfiguration. These observations, when taken together, provide compelling evidence of the fast-mode MHD wave nature of the primary (outer) fast component of a global EUV wave, running ahead of the secondary (inner) slow component of CME-caused restructuring.

Hot interstellar gas and ionization of embedded clouds

NASA Technical Reports Server (NTRS)

Cheng, K.-P.; Bruhweiler, F.

1990-01-01

Researchers present detailed photoionization calculations for the instellar cloud in which the Sun is embedded. They consider the EUV radiation field with contribution from discrete stellar sources and from a thermal bremsstrahlung-radiative recombination spectrum emitted from the surrounding 10 to the 6th power k coronal substrate. They establish lower limits to the fractional ionization of hydrogen and helium of 0.17 and 0.29 respectively. The high He ionization fraction results primarily from very strong line emission below 500 A originating in the surrounding coronal substrate while the H ionization is dominated by the EUV radiation from the discrete stellar sources. The dual effects of thermal conduction and the EUV spectrum of the 10 to the 6th k plasma on ionization in the cloud skin are explored. The EUV radiation field and Auger ionization have insignificant effects on the resulting ionic column densities of Si IV, C IV, N V and O VI through the cloud skin. Calculations show that the abundances of these species are dominated by collisional ionization in the thermal conduction front. Because of a low charge exchange rate with hydrogen, the ionic column density ratios of N (CIII)/N (CII) and N (NII)/N (NI) are dominated by the EUV radiation field in the local interstellar medium. These ratios should be important diagnostics for the EUV radiation field and serve as surrogate indicators of the interstellar He and H ionization fraction respectively. Spacecraft such as Lyman which is designed to obtain high resolution spectral data down to the Lyman limit at 912 A could sample interstellar lines of these ions.

Toward compact and ultra-intense laser driven soft x-ray lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Sebban, Stéphane

2017-05-01

We report here recent work on an optical-field ionized (OFI), high-order harmonic-seeded EUV laser. The amplifying medium is a plasma of nickel-like krypton obtained by optical field ionization focusing a 1 J, 30 fs, circularly- polarized, infrared pulse into a krypton-filled gas cell or krypton gas jet. The lasing transition is the 3d94p (J=0) --> 3d94p (J=1) transition of Ni-like krypton ions at 32.8 nm and is pumped by collisions with hot electrons. The polarization of the HH-seeded EUV laser beam was studied using an analyzer composed of three grazing incidence EUV multilayer mirrors able to spin under vacuum. For linear polarization, the Malus law has been recovered while in the case of a circularly-polarized seed, the EUV signal is insensitive to the rotation of the analyzer, bearing testimony to circularly polarized. The gain dynamics was probed by seeding the amplifier with a high-order harmonic pulse at different delays. The gain duration monotonically decreased from 7 ps to an unprecedented shortness of 450 fs FWHM as the amplification peak rose from 150 to 1,200 with an increase of the plasma density from 3 × 1018 cm-3 up to 1.2 × 1020 cm-3. The integrated energy of the EUV laser pulse was also measured, and found to be around 2 μJ. It is to be noted that in the ASE mode, longer amplifiers were achieved (up to 3 cm), yielding EUV outputs up to 14 μJ.

A MEMS scanner with lateral and axial scanning capability for dual axes confocal endomicroscopic in-vivo imaging (Conference Presentation)

NASA Astrophysics Data System (ADS)

Li, Haijun; Li, Gaoming; Duan, Xiyu; Wang, Thomas D.

2017-02-01

Aimed to build a dual-axes confocal endomicroscope with an outer diameter of 5.5mm for in-vivo imaging applications, an electrostatic MEMS scanner has been developed to enable two dimensional (2D) light scanning in either horizontal plane or vertical cross-sectional plane. The device has a compact structure design to match the dual axes confocal architecture in the probe without blocking the collimated light beams of excitation and collection, and a cutting-free silicon-on-insulator(SOI) micromachining process is used for the fabrication. A novel lever-based gimbal-like mechanism is employed to enable three degrees of freedom motions for lateral and axial light scanning, and its geometry is optimized for achieving large deflection with high scanning speed. Based on parametric excitation, the device can work in resonant modes. Testing result shows that, up to +/-27° optical deflection angle for inner axis torsion motion with a frequency of 4.9kHz, up to +/-28.5° optical deflection angle for outer axis torsion motion with a frequency of 0.65kHz and 360μm stroke for out-of-plane translation motion with a frequency of 0.53kHz are achieved with <60V driving voltage. Based on these results, 2D imaging with frame rate of 5 10Hz and large field of view (1000μm x 1000μm in horizontal plane and 1000μm x 400μm in vertical plane) can be enabled by this scanner.

The Lick Observatory image-dissector scanner.

NASA Technical Reports Server (NTRS)

Robinson, L. B.; Wampler, E. J.

1972-01-01

A scanner that uses an image dissector to scan the output screen of an image tube has proven to be a sensitive and linear detector for faint astronomical spectra. The image-tube phosphor screen acts as a short-term storage element and allows the system to approach the performance of an ideal multichannel photon counter. Pulses resulting from individual photons, emitted from the output phosphor and detected by the image dissector, trigger an amplifier-discriminator and are counted in a 24-bit, 4096-word circulating memory. Aspects of system performance are discussed, giving attention to linearity, dynamic range, sensitivity, stability, and scattered light properties.

Optical Scanning Architectures For Electronic Printing Applications

NASA Astrophysics Data System (ADS)

Johnson, Richard V.

1987-06-01

The explosive growth of computer technology in recent years has precipitated an equally dramatic growth in the market for nonimpact electronic printers. One of the most popular methods for implementing a high quality nonimpact electronic printer is to integrate a laser scanner with a xerographic copier/duplicator. The subject of this article is a discussion of alternative optical scanner architectures, including both traditional designs which are well represented in the marketplace, and also more exotic designs configured with spatial light modulators, designs which to date have had scant penetration into the marketplace but which can offer superior image quality.

An Outdoor Navigation Platform with a 3D Scanner and Gyro-assisted Odometry

NASA Astrophysics Data System (ADS)

Yoshida, Tomoaki; Irie, Kiyoshi; Koyanagi, Eiji; Tomono, Masahiro

This paper proposes a light-weight navigation platform that consists of gyro-assisted odometry, a 3D laser scanner and map-based localization for human-scale robots. The gyro-assisted odometry provides highly accurate positioning only by dead-reckoning. The 3D laser scanner has a wide field of view and uniform measuring-point distribution. The map-based localization is robust and computationally inexpensive by utilizing a particle filter on a 2D grid map generated by projecting 3D points on to the ground. The system uses small and low-cost sensors, and can be applied to a variety of mobile robots in human-scale environments. Outdoor navigation experiments were conducted at the Tsukuba Challenge held in 2009 and 2010, which is an open proving ground for human-scale robots. Our robot successfully navigated the assigned 1-km courses in a fully autonomous mode multiple times.