DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Electronic excitations and self-trapping of electrons and holes in CaSO4

NASA Astrophysics Data System (ADS)

Kudryavtseva, I.; Klopov, M.; Lushchik, A.; Lushchik, Ch; Maaroos, A.; Pishtshev, A.

2014-04-01

A first-principles study of the electronic properties of a CaSO4 anhydrite structural phase has been performed. A theoretical estimation for the fundamental band gap (p → s transitions) is Eg = 9.6 eV and a proper threshold for p → d transitions is Epd = 10.8 eV. These values agree with the data obtained for a set of CaSO4 doped with Gd3+, Dy3+, Tm3+ and Tb3+ ions using the methods of low-temperature highly sensitive luminescence and thermoactivation spectroscopy. The results are consistent with theoretical predictions of a possible low-temperature self-trapping of oxygen p-holes. The hopping diffusion of hole polarons starts above ˜40 K and is accompanied by a ˜50-60 K peak of thermally stimulated luminescence of RE3+ ions caused due to the recombination of hole polarons with the electrons localized at RE3+. There is no direct evidence of the self-trapping of heavy d-electrons, however, one can argue that their motion rather differs from that of conduction s-electrons.

Role of oxygen vacancies on light emission mechanisms in SrTiO 3 induced by high-energy particles

DOE PAGES

Crespillo, M. L.; Graham, J. T.; Agulló-López, F.; ...

2017-02-23

Light emission under MeV hydrogen and oxygen ions in stoichiometric SrTiO 3 are identified at temperatures of 100 K, 170 K and room-temperature. MeV ions predominately deposit their energies to electrons in SrTiO 3 with energy densities orders of magnitude higher than from UV or x-ray sources but comparable to femtosecond lasers. The ionoluminescence (IL) spectra can be resolved into three main Gaussian bands at 2.0 eV, 2.5 eV and 2.8 eV, whose relative contributions strongly depend on irradiation temperature, electronic energy loss and irradiation fluence. Two main bands, observed at 2.5 eV and 2.8 eV, are intrinsic and associatedmore » with electron–hole recombination in the perfect SrTiO 3 lattice. The 2.8 eV band is attributed to recombination of free (conduction) electrons with an in-gap level, possibly related to self-trapped holes. Self-trapped excitons (STEs) are considered suitable candidates for the 2.5 eV emission band, which implies a large energy relaxation in comparison to the intrinsic edge transition. The dynamics of electronic excitation, governs a rapid initial rise of the intensity; whereas, accumulated irradiation damage (competing non-radiative recombination channels) accounts for a subsequent intensity decrease. The previously invoked role of isolated oxygen vacancies for the blue luminescence (2.8 eV) does not appear consistent with the data. An increasing well-resolved band at 2.0 eV dominates at 170 K and below. It has been only previously observed in heavily strained and amorphous SrTiO 3, and is, here, attributed to transitions from d(t 2g) conduction band levels to d(e g) levels below the gap. In accordance with ab initio theoretical calculations they are associated to trapped electron states in relaxed Ti 3+ centers at an oxygen vacancy within distorted TiO 6 octahedra. The mechanism of defect evolution monitored during real-time IL experiments is presented. In conclusion, the light emission data confirm that IL is a useful tool to investigate lattice disorder in irradiated SrTiO 3.« less

Kinetic energy of shakeoff atomic electrons from 37K β+ decay

NASA Astrophysics Data System (ADS)

Behr, J. A.; Gorelov, A.; Farfan, C.; Smale, S.; Olchanski, K.; Kurchananov, L.; Anholm, M.; Behling, R. S.; Fenker, B.; Shidling, P. D.; Mehlman, M.; Melconian, D.; Ashery, D.; Gwinner, G.; Trinat Collaboration

2013-10-01

We have measured the kinetic energies from 0 to 30 eV of atomic shakeoff electrons from the β+ decay of 37K. Despite much experimental and theoretical work on the distribution of final ion charge states, shakeoff electrons from β- decay have only been measured with energies above 150 eV [Mitrokhovich, Nucl. Phys. Atom. Energy, 11, 125 (2010)]. We use our magneto-optical trap's time-varying magnetic quadrupole field combined with a uniform electric field as a spectrometer. Our result has more 15 eV electrons than a model using the sudden approximation and hydrogenic wavefunctions [Levinger, Phys. Rev. 90, 11 (1958)]. The total energy carried away by electrons is, as expected, a negligible correction to superallowed Ft values. Understanding the energy of these low-energy electrons is important for their use in precision β decay to select events coming from trapped atoms and start time-of-flight for the recoil ions. Our results could provide a benchmark for shakeoff electron calculations used for biological radiation damage [Lee, Comp. Math. Meth in Medicine doi:10.1155/2012/651475]. Support: NSERC, NRC through TRIUMF, DOE ER41747 ER40773, State of Texas, Israel Science Foundation.

Thermoluminescence study of X-ray and UV irradiated natural calcite and analysis of its trap and recombination level.

PubMed

Kalita, J M; Wary, G

2014-05-05

Thermoluminescence (TL) of natural light-orange color calcite (CaCO3) mineral in micro-grain powder form was studied at room temperature X-ray and UV irradiation under various irradiation times. TL was recorded in linear heating rate (2 K/s) from room temperature (300 K) to 523 K. Trapping parameters such as activation energy, order of kinetics, frequency factor have been evaluated by Computerized Glow Curve Deconvolution technique. Three electron trap centers had been estimated at depth 0.70, 1.30 and 1.49 eV from the conduction band. Investigation of emission spectra recorded at various temperatures showed single recombination center at depth 2.74 eV from the conduction band. Due to thermally assisted tunneling of electron and subsequent center-to-center recombination, a distinct peak of lower activation energy (0.60 eV) was observed at relatively higher temperature (~360 K) for X-ray irradiated sample. In UV excitation, there was an indication of photo-transfer phenomenon, where low TL intensity might have been observed; but due to simultaneous excitation of electrons from valence band to the trap level, TL intensity was found to increase with UV irradiation time. The results obtained within temperature range 300-523 K were explained by considering a band diagram. Copyright © 2014 Elsevier B.V. All rights reserved.

Scattering of Magnetic Mirror-Trapped Fast Electrons by a Shear Alfvén Wave

NASA Astrophysics Data System (ADS)

Wang, Y.; Gekelman, W. N.; Pribyl, P.; Papadopoulos, K.

2011-12-01

Highly energetic electrons produced naturally or artificially can be trapped in the earth's radiation belts for months, posing a danger to satellites in space. An experimental investigation of the scattering of mirror trapped fast electrons by a shear Alfvén wave is performed at the Large Plasma Device (LaPD) at UCLA, and sheds light on a technique for artificially de-trapping the hazardous electrons in space. The experiment is performed in a quiescent afterglow plasma (ne ≈ 0.1 to 1×1012cm-3, Te ≈ 0.5 eV, B0 = 400 to 1200 G, L = 18 m, and diameter = 0.6 m). The magnetic field is programmed to include a mirror section approximately 3 m long, with 1.1 ≤Rmirror≤ 4. A trapped fast electron population is generated in the mirror section using second harmonic Electron Cyclotron Heating (ECH). The heating source comprises a 25 kW magnetron, operating at 2.45 GHz, with the microwave power injected for 10 - 50 ms. Longer injection periods (τ>30ms) result in a population of runaway electrons (energies up to 5MeV) as evidenced by X-ray production when the electron orbits hit a probe or the waveguide. The fastest electrons are generated in an annular region in front of the waveguide, with a radial extent of several cm and axial extent L ≈ 1 m. Shear Alfvén waves are launched with Bwave/B0 less than 0.5%, at frequencies ranging from 115 to 230 kHz (0.19 to 0.75 of fci in the straight field). Using the X-ray production, v⊥ probes and Langmuir probes as diagnostics, the Alfvén waves are observed to have a dramatic effect on the run-away electrons (E~105eV) as well as the less energetic electrons (E~102eV): the Alfvén wave can modify the trapped electron orbits to the extent that they are lost from the mirror trap. Possible mechanisms for scattering include the shear Alfvén wave breaking of one or more adiabatic invariants of an electron in a mirror field. This work is supported by The Office of Naval Research and performed at the Basic Plasma Science Facility under ONR MURI 00014-07-1-0789. The BaPSF is funded by the Department of Energy and the National Science Foundation.

Defect levels of semi-insulating CdMnTe:In crystals

NASA Astrophysics Data System (ADS)

Kim, K. H.; Bolotinikov, A. E.; Camarda, G. S.; Hossain, A.; Gul, R.; Yang, G.; Cui, Y.; Prochazka, J.; Franc, J.; Hong, J.; James, R. B.

2011-06-01

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Study of positron annihilation with core electrons at the clean and oxygen covered Ag(001) surface

NASA Astrophysics Data System (ADS)

Joglekar, P.; Shastry, K.; Olenga, A.; Fazleev, N. G.; Weiss, A. H.

2013-03-01

In this paper we present measurements of the energy spectrum of electrons emitted as a result of Positron Annihilation Induce Auger Electron Emission from a clean and oxygen covered Ag (100) surface using a series of incident beam energies ranging from 20 eV down to 2 eV. A peak was observed at ~ 40 eV corresponding to the N23VV Auger transition in agreement with previous PAES studies. Experimental results were investigated theoretically by calculations of positron states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the clean and oxygen covered Ag(100) surface. An ab-initio investigation of stability and associated electronic properties of different adsorption phases of oxygen on Ag(100) has been performed on the basis of density functional theory and using DMOl3 code. The computed positron binding energy, positron surface state wave function, and positron annihilation probabilities of surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, elemental content, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data. This work was supported in part by the National Science Foundation Grant # DMR-0907679.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

NASA Astrophysics Data System (ADS)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

Electron-impact ionization cross sections out of the ground and 6P2 excited states of cesium

NASA Astrophysics Data System (ADS)

Łukomski, M.; Sutton, S.; Kedzierski, W.; Reddish, T. J.; Bartschat, K.; Bartlett, P. L.; Bray, I.; Stelbovics, A. T.; McConkey, J. W.

2006-09-01

An atom trapping technique for determining absolute, total ionization cross sections (TICS) out of an excited atom is presented. The unique feature of our method is in utilizing Doppler cooling of neutral atoms to determine ionization cross sections. This fluorescence-monitoring experiment, which is a variant of the “trap loss” technique, has enabled us to obtain the experimental electron impact ionization cross sections out of the Cs 6P3/22 state between 7eV and 400eV . CCC, RMPS, and Born theoretical results are also presented for both the ground and excited states of cesium and rubidium. In the low energy region (<11eV) where best agreement between these excited state measurements and theory might be expected, a discrepancy of approximately a factor of five is observed. Above this energy there are significant contributions to the TICS from both autoionization and multiple ionization.

Mechanisms of EUV exposure: electrons and holes

NASA Astrophysics Data System (ADS)

Narasimhan, Amrit; Grzeskowiak, Steven; Ackerman, Christian; Flynn, Tracy; Denbeaux, Greg; Brainard, Robert L.

2017-03-01

In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists. Current EUV photoresists are composed of photoacid generators (PAGs) in polymer matrices. Secondary electrons (2 - 80 eV) created in resists during EUV exposure play large role in acid-production. There are several proposed mechanisms for electron-resist interactions: internal excitation, electron trapping, and hole-initiated chemistry. Here, we will address two central questions in EUV resist research: (1) How many electrons are generated per EUV photon absorption? (2) By which mechanisms do these electrons interact and react with molecules in the resist? We will use this framework to evaluate the contributions of electron trapping and hole initiated chemistry to acid production in chemically amplified photoresists, with specific emphasis on the interdependence of these mechanisms. We will show measurements of acid yield from direct bulk electrolysis of PAGs and EUV exposures of PAGs in phenolic and nonphenolic polymers to narrow down the mechanistic possibilities in chemically amplified resists.

Simulation studies for operating electron beam ion trap at very low energy for disentangling edge plasma spectra

NASA Astrophysics Data System (ADS)

Jin, Xuelong; Fei, Zejie; Xiao, Jun; Lu, Di; Hutton, Roger; Zou, Yaming

2012-07-01

Electron beam ion traps (EBITs) are very useful tools for disentanglement studies of atomic processes in plasmas. In order to assist studies on edge plasma spectroscopic diagnostics, a very low energy EBIT, SH-PermEBIT, has been set up at the Shanghai EBIT lab. In this work, simulation studies for factors which hinder an EBIT to operate at very low electron energies were made based on the Tricomp (Field Precision) codes. Longitudinal, transversal, and total kinetic energy distributions were analyzed for all the electron trajectories. Influences from the electron current and electron energy on the energy depression caused by the space charge are discussed. The simulation results show that although the energy depression is most serious along the center of the electron beam, the electrons in the outer part of the beam are more likely to be lost when an EBIT is running at very low energy. Using the simulation results to guide us, we successfully managed to reach the minimum electron beam energy of 60 eV with a beam transmission above 57% for the SH-PermEBIT. Ar and W spectra were measured from the SH-PermEBIT at the apparent electron beam energies (read from the voltage difference between the electron gun cathode and the central drift tube) of 60 eV and 1200 eV, respectively. The spectra are shown in this paper.

Electron trapping and transport by supersonic solitons in one-dimensional systems

NASA Technical Reports Server (NTRS)

Zmuidzinas, J. S.

1978-01-01

A one-dimensional chain of ions or molecules and electrons described by a Froehlich-type Hamiltonian with quartic phonon anharmonicities is investigated. It is shown that the anharmonic lattice supports supersonic solitons which under favorable circumstances may trap electrons and transport them along the lattice. For a lattice constant/soliton spatial extent quotient of the order of 0.1, rough estimates give electron trapping energies in the meV range. They imply a useful temperature range, up to tens of degrees K, for observing the new effect. The activation energy of a lattice soliton is proportional to the molecular mass and is therefore quite high (about 1 eV) for typical quasi-one-dimensional organic systems.

Single-Photon, Double Photodetachment of Nickel Phthalocyanine Tetrasulfonic Acid 4- Anions.

PubMed

Daly, Steven; Girod, Marion; Vojkovic, Marin; Giuliani, Alexandre; Antoine, Rodolphe; Nahon, Laurent; O'Hair, Richard A J; Dugourd, Philippe

2016-07-07

Single-photon, two-electron photodetachment from nickel phthalocyanine tetrasulfonic acid tetra anions, [NiPc](4-), was examined in the gas-phase using a linear ion trap coupled to the DESIRS VUV beamline of the SOLEIL Synchrotron. This system was chosen since it has a low detachment energy, known charge localization, and well-defined geometrical and electronic structures. A threshold for two-electron loss is observed at 10.2 eV, around 1 eV lower than previously observed double detachment thresholds on multiple charged protein anions. The photodetachment energy of [NiPc](4-) has been previously determined to be 3.5 eV and the photodetachment energy of [NiPc](3-•) is determined in this work to be 4.3 eV. The observed single photon double electron detachment threshold is hence 5.9 eV higher than the energy required for sequential single electron loss. Possible mechanisms are for double photodetachment are discussed. These observations pave the way toward new, exciting experiments for probing double photodetachment at relatively low energies, including correlation measurements on emitted photoelectrons.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

PubMed

Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

2015-05-13

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

Charge transfer fluorescence and 34 nm exciton diffusion length in polymers with electron acceptor end traps

DOE PAGES

Zaikowski, Lori; Mauro, Gina; Bird, Matthew; ...

2014-12-22

Photoexcitation of conjugated poly-2,7-(9,9-dihexylfluorene) polyfluorenes with naphthylimide (NI) and anthraquinone (AQ) electron-acceptor end traps produces excitons that form charge transfer states at the end traps. Intramolecular singlet exciton transport to end traps was examined by steady state fluorescence for polyfluorenes of 17 to 127 repeat units in chloroform, dimethylformamide (DMF), tetrahydrofuran (THF), and p-xylene. End traps capture excitons and form charge transfer (CT) states at all polymer lengths and in all solvents. The CT nature of the end-trapped states is confirmed by their fluorescence spectra, solvent and trap group dependence and DFT descriptions. Quantum yields of CT fluorescence are asmore » large as 46%. This strong CT emission is understood in terms of intensity borrowing. Energies of the CT states from onsets of the fluorescence spectra give the depths of the traps which vary with solvent polarity. For NI end traps the trap depths are 0.06 (p-xylene), 0.13 (THF) and 0.19 eV (CHCl 3). For AQ, CT fluorescence could be observed only in p-xylene where the trap depth is 0.27 eV. Quantum yields, emission energies, charge transfer energies, solvent reorganization and vibrational energies were calculated. Fluorescence measurements on chains >100 repeat units indicate that end traps capture ~50% of the excitons, and that the exciton diffusion length L D =34 nm, which is much larger than diffusion lengths reported in polymer films or than previously known for diffusion along isolated chains. As a result, the efficiency of exciton capture depends on chain length, but not on trap depth, solvent polarity or which trap group is present.« less

Distribution of electron traps in SiO2/HfO2 nMOSFET

NASA Astrophysics Data System (ADS)

Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

2016-05-01

In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

Observation of the effects of stronger magnetic fields on warm, higher energy electrons and ion beams transiting a double layer in a helicon plasma

NASA Astrophysics Data System (ADS)

Scharer, John; Sung, Yung-Ta; Li, Yan

2017-10-01

Fast, two-temperature electrons (>80 eV, Te =13 eV tail, 4 eV bulk) with substantial tail density fractions are created at low (< = 1.7 mtorr) Ar pressure @ 340 G in the antenna region with nozzle mirror ratio of 1.4 on MadHeX @ 900W. These distributions including a fast tail are observed upstream of a double layer. The fast, untrapped tail electrons measured downstream of the double layer have a higher temperature of 13 eV than the trapped, upstream electrons of 4 eV temperature. Upstream plasma potential fluctuations of + - 30 percent are observed. An RF-compensated Langmuir probe is used to measure the electron temperatures and densities and OES, mm wave IF and an RPA for the IEDF are also utilized. As the magnetic field is increased to 1020 G, an increase in the electron temperature and density upstream of the double layer is observed with Te= 15-25 eV with a primarily single temperature mode. Accelerated ion beam energies in the range of 65-120 eV are observed as the magnetic field is increased from 340 to 850 G. The role of the nozzle, plasma double layer and helicon wave coupling on the EEDF and ion acceleration will be discussed. Research supported in part by the University of Wisconsin.

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Gogova, D.; Tarelkin, S. A.; Pearton, S. J.

2018-03-01

The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016-9 × 1018 cm-3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with a much lower concentration than the total Sn density. For heavily Sn doped films (Sn concentration, 9 × 1018 cm-3), the electrical properties in the top portion of the layer were determined by deep centers with a level at Ec-0.21 eV not described previously. In more lightly doped layers, the Ec-0.21 eV centers and deeper traps at Ec-0.8 eV were present, with the latter pinning the Fermi level. Low temperature photocapacitance and capacitance voltage measurements of illuminated samples indicated the presence of high densities (1017-1018 cm-3) of deep acceptors with an optical ionization threshold of 2.3 eV. Optical deep level transient spectroscopy (ODLTS) and photoinduced current transient spectroscopy (PICTS) detected electron traps at Ec-0.8 eV and Ec-1.1 eV. For lightly doped layers, the compensation of film conductivity was mostly provided by the Ec-2.3 eV acceptors. For heavily Sn doped films, deep acceptor centers possibly related to Ga vacancies were significant. The photocapacitance and the photocurrent caused by illumination at low temperatures were persistent, with an optical threshold of 1.9 eV and vanished only at temperatures of ˜400 K. The capture barrier for electrons causing the persistent photocapacitance effect was estimated from ODLTS and PICTS to be 0.25-0.35 eV.

Spectroscopy of M-shell x-ray transitions in Zn-like through Co-like W

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clementson, J; Beiersdorfer, P; Brown, G V

2009-07-08

The M-shell x-ray emission of highly charged tungsten ions has been investigated at the Livermore electron beam ion trap facility. Using the SuperEBIT electron beam ion trap and a NASA x-ray calorimeter array, transitions connecting the ground configurations in the 1500-3600 eV spectral range of zinc-like W{sup 44+} through cobalt-like W{sup 47+} have been measured. The measured spectra are compared with theoretical line positions and emissivities calculated using the FAC code.

Ion Temperature Measurements in an electron beam ion trap (EBIT)

NASA Astrophysics Data System (ADS)

Beiersdorfer, P.; Decaux, V.; Widmann, K.

1997-11-01

An electron beam ion trap consists of a Penning-type cylindrical trap traversed by a high-energy (<= 200 keV), high-density (Ne <= 10^13 cm-3) electron beam. Ions are trapped by the space charge potential of the electron beam, a static potential on the end electrodes, and a 3-T axial magnetic field [1]. The ions are heated by the electron beam and leave the trap once their kinetic energy suffices to overcome the potential barriers. Using high-resolution x-ray spectroscopy, we have made systematic measurements of the temperature of Ti^20+ and Cs^45+ ions in the trap [2]. The dependence of the ion temperature on operating parameters, such as trapping potential, beam current, and neutral gas pressure, will be presented. Temperatures as low as 15.4 ± 4.4 eV and as high as 2 keV were observed. *Work performed under the auspices of the U.S.D.o.E. by Lawrence Livermore National Laboratory under contract No. W-7405-ENG-48. [1] M. Levine et al., Phys. Scripta T22, 157 (1989). [2]P. Beiersdorfer et al., PRL 77, 5356 (1996); P. Beiersdorfer, in AIP Conf. Proc. No. 389, p. 121 (1997).

Thermally-assisted optically stimulated luminescence from deep electron traps in α-Al2O3:C,Mg

NASA Astrophysics Data System (ADS)

Kalita, J. M.; Chithambo, M. L.; Polymeris, G. S.

2017-07-01

We report thermally-assisted optically stimulated luminescence (TA-OSL) in α-Al2O3:C,Mg. The OSL was measured at elevated temperatures between 50 and 240 °C from a sample preheated to 500 °C after irradiation to 100 Gy. That OSL could be measured even after the preheating is direct evidence of the existence of deep electron traps in α-Al2O3:C,Mg. The TA-OSL intensity goes through a peak with measurement temperature. The initial increase is ascribed to thermal assistance to optical stimulation whereas the subsequent decrease in intensity is deduced to reflect increasing incidences of non-radiative recombination, that is, thermal quenching. The activation energy for thermal assistance corresponding to a deep electron trap was estimated as 0.667 ± 0.006 eV whereas the activation energy for thermal quenching was calculated as 0.90 ± 0.04 eV. The intensity of the TA-OSL was also found to increase with irradiation dose. The dose response is sublinear from 25 to 150 Gy but saturates with further increase of dose. The TA-OSL dose response has been discussed by considering the competition for charges at the deep traps. This study incidentally shows that TA-OSL can be effectively used in dosimetry involving large doses.

High Mobility Conjugated Polymers

DTIC Science & Technology

2007-10-20

will act as a trap for opposite charge carriers; the electron affinities were 4.0 eV (BBL) and 2.7 eV (PTHQx) and ionization potentials were 6.0 eV...transistors (OFETs), photovoltaic cells, and photodetectors, is limited primarily by the low charge carrier mobilities of current materials. To address this...showing a maximum mobility with hexyl. Fundamental insights into the structural factors that govern high mobility charge transport and recombination in

Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques

DOE PAGES

Garris, Rebekah L.; Johnston, Steven; Li, Jian V.; ...

2017-08-31

In a previous study, we reported on Cu(In,Ga)Se2-based (CIGS) solar cell samples collected from different research laboratories and industrial companies with the purpose of understanding the range of CIGS materials that can lead to high-quality and high-efficiency solar panels. Here, we report on electrical measurements of those same samples. Electron-beam induced current and time-resolved photoluminescence (TRPL) gave insights about the collection probability and the lifetime of carriers generated in each absorber. Capacitance and drive-level capacitance profiling revealed nonuniformity in carrier-density profiles. Admittance spectroscopy revealed small activation energies (= 0.03 eV) indicative of the inversion strength, larger activation energies (> 0.1more » eV) reflective of thermal activation of absorber conductivity and a deeper defect level. Deep-level transient spectroscopy (DLTS) probed deep hole-trapping defects and showed that all samples in this study had a majority-carrier defect with activation energy between 0.3 eV and 0.9 eV. Optical-DLTS revealed deep electron-trapping defects in several of the CIGS samples. This work focused on revealing similarities and differences between high-quality CIGS solar cells made with various structures and fabrication techniques.« less

Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garris, Rebekah L.; Johnston, Steven; Li, Jian V.

In a previous study, we reported on Cu(In,Ga)Se2-based (CIGS) solar cell samples collected from different research laboratories and industrial companies with the purpose of understanding the range of CIGS materials that can lead to high-quality and high-efficiency solar panels. Here, we report on electrical measurements of those same samples. Electron-beam induced current and time-resolved photoluminescence (TRPL) gave insights about the collection probability and the lifetime of carriers generated in each absorber. Capacitance and drive-level capacitance profiling revealed nonuniformity in carrier-density profiles. Admittance spectroscopy revealed small activation energies (= 0.03 eV) indicative of the inversion strength, larger activation energies (> 0.1more » eV) reflective of thermal activation of absorber conductivity and a deeper defect level. Deep-level transient spectroscopy (DLTS) probed deep hole-trapping defects and showed that all samples in this study had a majority-carrier defect with activation energy between 0.3 eV and 0.9 eV. Optical-DLTS revealed deep electron-trapping defects in several of the CIGS samples. This work focused on revealing similarities and differences between high-quality CIGS solar cells made with various structures and fabrication techniques.« less

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

NASA Astrophysics Data System (ADS)

Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

2018-05-01

This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

Complementary roles of benzylpiperazine and iodine 'vapor' in the strong enhancement of orange photoluminescence from CuI(1 1 1) thin film.

PubMed

Rawal, Takat B; Turkowski, Volodymyr; Rahman, Talat S

2014-05-07

We have employed density functional theory, corrected by the on-site electron-electron repulsion energy U, to clarify the mechanism behind the enhanced orange photoluminescence (PL) of a CuI(1 1 1) thin film conjugated with a benzylpiperazine (BZP) molecule in the presence of an iodine 'vapor' atom. Our results demonstrated that the adsorbed molecule and the 'vapor' atom play complementary roles in producing the PL. The latter, in attaching to the film surface, creates a hole-trapping surface state located ~0.25 eV above the valence band-edge of the film, in good agreement with ~0.2 eV reported in experiments. Upon photo-excitation of the BZP/CuI(1 1 1) system in the presence of surface iodine 'vapor' atoms, excited electrons are transferred into the conduction band of CuI, and holes are trapped by the 'vapor' atoms. These holes, in turn, quickly relax into the HOMO state of the BZP molecule, owing to the fact that the molecule adsorbs on the film surface in the immediate vicinity of a 'vapor' atom. Relaxed holes subsequently recombine with excited electrons in the conduction band of the CuI film, thereby producing a luminescence peak at ~2.1 eV, in qualitative agreement with experimental findings.

The Development of Spectroscopic Techniques to Study Defects in Thin Film Silicon-Dioxide

NASA Astrophysics Data System (ADS)

Zvanut, Mary Ellen

This dissertation research concerns the study of defects in thin film sputtered SiO_2 which is used as an optical coating material. The capacitance-voltage and current-voltage techniques typically used in microelectronics investigations were used to examine the concentration, location, and kinetics of charge in an aluminum-sputtered oxide-native oxide-silicon capacitor. The response of the capacitor to low field bias stress reveals a hysteretic trapping behavior similar to that observed in microelectronic grade oxide films. In an effort to understand this phenomenon, a band-to-trap tunneling model was developed based on the assumption that the defect involved exhibits a delta function spatial distribution and an extended energy distribution. The central feature of this model, defect relaxation, provides a physical explanation for the hysteretic trapping behavior. Analysis yields that the trap is located spatially within 2 nm of the Si/SiO _2 interface and energetically less than 5 eV from the SiO_2 conduction band edge. The relaxation energy associated with the capture of an electron at the trap is 0.1-2.2 eV. Correlation of the electrical measurements executed for this investigation with electron paramagnetic resonance (EPR) data obtained by Dr. P. Caplan provides structural information about the defect involved with the hysteretic trapping phenomenon. EPR results obtained before and after subjecting an oxide-silicon structure to corona discharge suggest that the trapping center is an E^ ' defect. The technique of band-to-trap tunneling spectroscopy combined with the EPR experiments provides the first reported trap depth associated with the capture of a hole at an E^' center located near the silicon surface of an oxide/silicon system.

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

2018-02-01

InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

Investigation of Oxygen and Hydrogen Associated Charge Trapping and Electrical Characteristics of Silicon Nitride Films for Mnos Devices.

NASA Astrophysics Data System (ADS)

Xu, Dan

Silicon nitride (Si_3N _4) and silicon oxynitride (SiO _{rm x}N_ {rm y}) films in the form of metal -nitride-oxide-silicon (MNOS) structures were investigated to determine the correlation between their electrical characteristics and the nature of the chemical bonding so as to provide guidelines for the next generation of nonvolatile memory devices. The photoionization cross section of electron traps in the oxynitride films of MNOS devices were also measured as a function photon energy and oxygen concentration of the silicon oxynitride films. An effective photoionization cross section associated with electron traps was determined to be between 4.9 times 10 ^{-19} cm^2 to 10.8 times 10^ {-19} cm^2 over the photon energy of 2.06 eV to 3.1 eV for silicon oxynitride films containing 7 atomic % to 17 atomic % of oxygen. The interface state density of metal-nitride-oxide -silicon (MNOS) devices was investigated as a function of processing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures for deposition temperature between 650^ circC to 850^circC increased from 1.1 to 8.2 times 10 ^{11} cm^ {-2}eV^{-1}, for as-deposited silicon nitride films; but decreased from 5.0 to 3.5 times 10^ {11} cm^{-2} eV^{-1}, for films annealed in nitrogen at 900^circC for 60 minutes; and further decreased and remained constant at 1.5 times 10^{11 } cm^{-2}eV ^{-1}, for films which were further annealed in hydrogen at 900^ circC for an additional 60 minutes. The interface state density increase was due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density was subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. The photocurrent-voltage (photoI-V) technique in combination with internal photo-electric technique were employed to determine the trapped charge density and its centroid as a function of processing conditions. Results showed that the trapped charge density was of the order of 10^{18} cm ^{-3}. However, the charge trapping density increased about 30% as the atomic percentage of hydrogen decreased from 6 to 2 atomic %.

Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

2018-06-01

Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

Trap depth and color variation of Ce3+-Cr3+ co-doped Gd3(Al,Ga)5O12 garnet persistent phosphors

NASA Astrophysics Data System (ADS)

Asami, Kazuki; Ueda, Jumpei; Tanabe, Setsuhisa

2016-12-01

Persistent luminescent properties in Ce3+-Cr3+ codoped Gd3Al5-xGaxO12 garnet (GAGG:Ce-Cr) solid solution have been investigated. The persistent luminescent color is shifted from orange to yellowish green with increasing Ga content because Ce3+: 5d level splitting becomes much weaker. The depth of electron trap introduced by Cr codoping was estimated from the intense thermoluminescence glow peak by the initial rise method. The trap depth decreases from 0.56 eV to 0.29 eV with increasing Ga content. The shift can be explained by downshift of bottom of conduction band. From the persistent luminescence decay curve measurement after ceasing 450 nm blue illumination, the samples with x = 2.5 exhibited the longest persistent luminescence for 405 min until the luminance becomes 2 mcd/m2 in GAGG:Ce-Cr phosphors.

Thermoluminescence glow curve deconvolution and trapping parameters determination of dysprosium doped magnesium borate glass

NASA Astrophysics Data System (ADS)

Salama, E.; Soliman, H. A.

2018-07-01

In this paper, thermoluminescence glow curves of gamma irradiated magnesium borate glass doped with dysprosium were studied. The number of interfering peaks and in turn the number of electron trap levels are determined using the Repeated Initial Rise (RIR) method. At different heating rates (β), the glow curves were deconvoluted into two interfering peaks based on the results of RIR method. Kinetic parameters such as trap depth, kinetic order (b) and frequency factor (s) for each electron trap level is determined using the Peak Shape (PS) method. The obtained results indicated that, the magnesium borate glass doped with dysprosium has two electron trap levels with the average depth energies of 0.63 and 0.79 eV respectively. These two traps have second order kinetic and are formed at low temperature region. The obtained results due to the glow curve analysis could be used to explain some observed properties such as, high thermal fading and light sensitivity for such thermoluminescence material. In this work, systematic procedures to determine the kinetic parameters of any thermoluminescence material are successfully introduced.

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

NASA Astrophysics Data System (ADS)

Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

2018-02-01

Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

NASA Technical Reports Server (NTRS)

Li, S. S.; Chiu, T. T.; Loo, R. Y.

1981-01-01

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

First-Principles Modeling of Polaron Formation in TiO2 Polymorphs.

PubMed

Elmaslmane, A R; Watkins, M B; McKenna, K P

2018-06-21

We present a computationally efficient and predictive methodology for modeling the formation and properties of electron and hole polarons in solids. Through a nonempirical and self-consistent optimization of the fraction of Hartree-Fock exchange (α) in a hybrid functional, we ensure the generalized Koopmans' condition is satisfied and self-interaction error is minimized. The approach is applied to model polaron formation in known stable and metastable phases of TiO 2 including anatase, rutile, brookite, TiO 2 (H), TiO 2 (R), and TiO 2 (B). Electron polarons are predicted to form in rutile, TiO 2 (H), and TiO 2 (R) (with trapping energies ranging from -0.02 eV to -0.35 eV). In rutile the electron localizes on a single Ti ion, whereas in TiO 2 (H) and TiO 2 (R) the electron is distributed across two neighboring Ti sites. Hole polarons are predicted to form in anatase, brookite, TiO 2 (H), TiO 2 (R), and TiO 2 (B) (with trapping energies ranging from -0.16 eV to -0.52 eV). In anatase, brookite, and TiO 2 (B) holes localize on a single O ion, whereas in TiO 2 (H) and TiO 2 (R) holes can also be distributed across two O sites. We find that the optimized α has a degree of transferability across the phases, with α = 0.115 describing all phases well. We also note the approach yields accurate band gaps, with anatase, rutile, and brookite within six percent of experimental values. We conclude our study with a comparison of the alignment of polaron charge transition levels across the different phases. Since the approach we describe is only two to three times more expensive than a standard density functional theory calculation, it is ideally suited to model charge trapping at complex defects (such as surfaces and interfaces) in a range of materials relevant for technological applications but previously inaccessible to predictive modeling.

Energy dependence of the trapping of uranium atoms by aluminum oxide surfaces

NASA Technical Reports Server (NTRS)

Librecht, K. G.

1979-01-01

The energy dependence of the trapping probability for sputtered U-235 atoms striking an oxidized aluminum collector surface at energies between 1 eV and 184 eV was measured. At the lowest energies, approximately 10% of the uranium atoms are not trapped, while above 10 eV essentially all of them stick. Trapping probabilities averaged over the sputtered energy distribution for uranium incident on gold and mica are also presented.

Photodetachment of electrons from amide and arsenide ions - The electron affinities of NH2., and AsH2.

NASA Technical Reports Server (NTRS)

Smyth, K. C.; Brauman, J. I.

1972-01-01

The relative cross section for the gas-phase photodetachment of electrons has been determined for NH2(-) in the wavelength region of 1195 to 1695 nm and for AsH2(-) in the region from 620 to 1010 nm. An ion cyclotron resonance spectrometer was used to generate, trap, and detect negative ions. A 1000-W xenon arc lamp with a grating monochromator was used as the light source, except for one series of experiments in which a tunable laser was employed. Single sharp thresholds were observed in both cross sections, and the following electron affinity values were determined: 0.744 (plus or minus 0.022) eV for NH2. and 1.27 (plus or minus 0.03) eV for AsH2.

Deep centers in AlGaN-based light emitting diode structures

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Mil'vidskii, M. G.; Usikov, A. S.; Pushnyi, B. V.; Lundin, W. V.

1999-10-01

Deep traps were studied in GaN homojunction and AlGaN/GaN heterojunction light emitting diode (LED) p-i-n structures by means of deep levels transient spectroscopy (DLTS), admittance and electroluminescence (EL) spectra measurements. It is shown that, in homojunction LED structures, the EL spectra comes from recombination involving Mg acceptors in-diffusing into the active i-layer. This Mg in-diffusion is strongly suppressed in heterostructures with the upper p-type layer containing about 5% of Al. As a result the main peak in the EL spectra of heterostructures is shifted toward higher energy compared to homojunctions. Joint doping of the i-layer with Zn and Si allows to shift the main EL peak to longer wavelength. The dominant electron traps observed in the studied LED structures had ionization energies of 0.55 and 0.85 eV. The dominant hole traps had apparent ionization energies of 0.85 and 0.4 eV. The latter traps were shown to be metastable and it is argued that they could be at least in part responsible for the persistent photoconductivity observed in p-GaN.

Ionosphere-Magnetosphere Energy Interplay in the Regions of Diffuse Aurora

NASA Technical Reports Server (NTRS)

Khazanov, G. V.; Glocer, A.; Sibeck, D. G.; Tripathi, A. K.; Detweiler, L.G.; Avanov, L. A.; Singhal, R. P.

2016-01-01

Both electron cyclotron harmonic (ECH) waves and whistler mode chorus waves resonate with electrons of the Earths plasma sheet in the energy range from tens of eV to several keV and produce the electron diffuse aurora at ionospheric altitudes. Interaction of these superthermal electrons with the neutral atmosphere leads to the production of secondary electrons (E500600 eV) and, as a result, leads to the activation of lower energy superthermal electron spectra that can escape back to the magnetosphere and contribute to the thermal electron energy deposition processes in the magnetospheric plasma. The ECH and whistler mode chorus waves, however, can also interact with the secondary electrons that are coming from both of the magnetically conjugated ionospheres after they have been produced by initially precipitated high-energy electrons that came from the plasma sheet. After their degradation and subsequent reflection in magnetically conjugate atmospheric regions, both the secondary electrons and the precipitating electrons with high (E600 eV) initial energies will travel back through the loss cone, become trapped in the magnetosphere, and redistribute the energy content of the magnetosphere-ionosphere system. Thus, scattering of the secondary electrons by ECH and whistler mode chorus waves leads to an increase of the fraction of superthermal electron energy deposited into the core magnetospheric plasma.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Ion acceleration and non-Maxwellian electron distributions in a low collisionality, high power helicon plasma source

NASA Astrophysics Data System (ADS)

Li, Yan; Sung, Yung-Ta; Scharer, John

2015-11-01

Ion acceleration through plasma double layer and non-Maxwellian two temperature electron distributions have been observed in Madison Helicon Experiment (MadHeX) operated in high RF power (>1000 W) and low Ar pressure (0.17 mtorr) inductive mode. By applying Optical Emission Spectroscopy (OES) cross-checked with an RF-compensated Langmuir probe (at 13.56 MHz and its second and third harmonics), the fast (>80 eV), untrapped electrons downstream of the double layer have a higher temperature of 13 eV than the trapped bulk electrons upstream with a temperature of 4 eV. The reduction of plasma potential and density observed in the double layer region require an upstream temperature ten times the measured 4 eV if occurring via Boltzmann ambipolar expansion. The hot tail electrons of the non-Maxwellian electron distribution affect the formation and the potential drop of the double layer region. The mechanism behind this has been explored via several non-invasive plasma diagnostics tools. The OES measured electron temperatures and densities are also cross-checked with Atomic Data and Analysis Structure (ADAS) and a millimeter wave interferometer respectively. The IEDF is measured by a four-grid RPA and also cross-checked with argon 668 nm Laser Induced Fluorescence (LIF). An emissive probe has been used to measure the plasma potential.

Graphene/black phosphorus heterostructured photodetector

NASA Astrophysics Data System (ADS)

Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

2018-06-01

Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

25th anniversary article: charge transport and recombination in polymer light-emitting diodes.

PubMed

Kuik, Martijn; Wetzelaer, Gert-Jan A H; Nicolai, Herman T; Craciun, N Irina; De Leeuw, Dago M; Blom, Paul W M

2014-01-01

This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polycyclic Aromatic Hydrocarbon Ionization Energy Lowering in Water Ices

NASA Technical Reports Server (NTRS)

Gudipati, Murthy S.; Allamandola, Louis J.

2004-01-01

In studying various interstellar and solar system ice analogs, we have recently found that upon vacuum ultraviolet photolysis, polycyclic aromatic hydrocarbons (PAHs) frozen in water ice at low temperatures are easily ionized and indefinitely stabilized as trapped ions (Gudipati; Gudipati & Allamandola). Here we report the first experimental study that shows that PAH ionization energy is significantly lowered in PAH/H2O ices, in agreement with recent theoretical work (Woon & Park). The ionization energy (IE) of the PAH studied here, quaterrylene (C40H20, IE = 6.11 eV), is lowered by up to 2.11 eV in water ice. PAH ionization energy reduction in low-temperature water ice substantially expands the astronomical regions in which trapped ions and electrons may be important. This reduction in ionization energy should also hold for other types of trapped species in waterrich interstellar, circumstellar, and solar system ices. Subject headings: ISM: clouds - methods: laboratory - molecular processes - radiation mechanisms: nonthermal -ultraviolet: ISM - ultraviolet: solar system

Small polarons and point defects in LaFeO3

NASA Astrophysics Data System (ADS)

Zhu, Zhen; Peelaers, Hartwin; van de Walle, Chris G.

The proton-conductive perovskite-type LaFeO3 is a promising negative-electrode material for Ni/metal-hydride (Ni-MH) batteries. It has a discharge capacity up to 530 mAhg-1 at 333 K, which is significantly higher than commercialized AB5-type alloys. To elucidate the underlying mechanism of this performance, we have investigated the structural and electronic properties of bulk LaFeO3, as well as the effect of point defects, using hybrid density functional methods. LaFeO3 is antiferromagnetic in the ground state with a band gap of 3.54 eV. Small hole and electron polarons can form through self- or point-defect-assisted trapping. We find that La vacancies and Sr substitutional on La sites are shallow acceptors with the induced holes trapped as small polarons, while O and Fe vacancies are deep defect centers. Hydrogen interstitials behave like shallow donors, with the donor electrons localized on nearby iron sites as electron polarons. With a large trapping energy, these polarons can act as electron or hole traps and affect the electrical performance of LaFeO3 as the negative electrode for Ni-MH batteries. We acknowledge DOE for financial support.

Ion gyroradius effects on particle trapping in kinetic Alfven waves along auroral field lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damiano, P. A.; Johnson, J. R.; Chaston, C. C.

In this study, a 2-D self-consistent hybrid gyrofluid-kinetic electron model is used to investigate Alfven wave propagation along dipolar magnetic field lines for a range of ion to electron temperature ratios. The focus of the investigation is on understanding the role of these effects on electron trapping in kinetic Alfven waves sourced in the plasma sheet and the role of this trapping in contributing to the overall electron energization at the ionosphere. This work also builds on our previous effort by considering a similar system in the limit of fixed initial parallel current, rather than fixed initial perpendicular electric field.more » It is found that the effects of particle trapping are strongest in the cold ion limit and the kinetic Alfven wave is able to carry trapped electrons a large distance along the field line yielding a relatively large net energization of the trapped electron population as the phase speed of the wave is increased. However, as the ion temperature is increased, the ability of the kinetic Alfven wave to carry and energize trapped electrons is reduced by more significant wave energy dispersion perpendicular to the ambient magnetic field which reduces the amplitude of the wave. This reduction of wave amplitude in turn reduces both the parallel current and the extent of the high-energy tails evident in the energized electron populations at the ionospheric boundary (which may serve to explain the limited extent of the broadband electron energization seen in observations). Here, even in the cold ion limit, trapping effects in kinetic Alfven waves lead to only modest electron energization for the parameters considered (on the order of tens of eV) and the primary energization of electrons to keV levels coincides with the arrival of the wave at the ionospheric boundary.« less

Ion gyroradius effects on particle trapping in kinetic Alfven waves along auroral field lines

DOE PAGES

Damiano, P. A.; Johnson, J. R.; Chaston, C. C.

2016-11-10

In this study, a 2-D self-consistent hybrid gyrofluid-kinetic electron model is used to investigate Alfven wave propagation along dipolar magnetic field lines for a range of ion to electron temperature ratios. The focus of the investigation is on understanding the role of these effects on electron trapping in kinetic Alfven waves sourced in the plasma sheet and the role of this trapping in contributing to the overall electron energization at the ionosphere. This work also builds on our previous effort by considering a similar system in the limit of fixed initial parallel current, rather than fixed initial perpendicular electric field.more » It is found that the effects of particle trapping are strongest in the cold ion limit and the kinetic Alfven wave is able to carry trapped electrons a large distance along the field line yielding a relatively large net energization of the trapped electron population as the phase speed of the wave is increased. However, as the ion temperature is increased, the ability of the kinetic Alfven wave to carry and energize trapped electrons is reduced by more significant wave energy dispersion perpendicular to the ambient magnetic field which reduces the amplitude of the wave. This reduction of wave amplitude in turn reduces both the parallel current and the extent of the high-energy tails evident in the energized electron populations at the ionospheric boundary (which may serve to explain the limited extent of the broadband electron energization seen in observations). Here, even in the cold ion limit, trapping effects in kinetic Alfven waves lead to only modest electron energization for the parameters considered (on the order of tens of eV) and the primary energization of electrons to keV levels coincides with the arrival of the wave at the ionospheric boundary.« less

Local-time survey of plasma at low altitudes over the auroral zones

NASA Technical Reports Server (NTRS)

Frank, L. A.; Ackerson, K. L.

1971-01-01

A local-time survey of the low energy proton and electron intensities precipitated into the earth's atmosphere during periods of magnetic quiescence was constructed. A typical, individual satellite crossing of this region in each of eight local-time sectors was selected from a library of similar observations with the polar-orbiting satellite Injun 5. The trapping boundary for more energetic electron intensities, E 45 keV, is a natural coordinate for delineating the boundary between the two major types of lower energy, 50 or = E or = 15,000 eV. The main contributors to electron energy influx are inverted V precipitation poleward of the trapping boundary and the plasma sheet intensities equatorward. These are interpreted in terms of a magnetospheric model.

Observation of two distinct negative trions in tungsten disulfide monolayers

NASA Astrophysics Data System (ADS)

Boulesbaa, Abdelaziz; Huang, Bing; Wang, Kai; Lin, Ming-Wei; Mahjouri-Samani, Masoud; Rouleau, Christopher; Xiao, Kai; Yoon, Mina; Sumpter, Bobby; Puretzky, Alexander; Geohegan, David

2015-09-01

Ultrafast pump-probe spectroscopy of two-dimensional tungsten disulfide monolayers (2 D W S2) grown on sapphire substrates revealed two transient absorption spectral peaks that are attributed to distinct negative trions at ˜2.02 eV (T1) and ˜1.98 eV (T2) . The dynamics measurements indicate that trion formation by the probe is enabled by photodoped 2D WS2 crystals with electrons remaining after trapping of holes from excitons or free electron-hole pairs at defect sites in the crystal or on the substrate. Dynamics of the characteristic absorption bands of excitons XA and XB at ˜2.03 and ˜2.40 eV , respectively, were separately monitored and compared to the photoinduced absorption features. Selective excitation of the lowest exciton level XA using λpump<2.4 eV forms only trion T1, implying that the electron remaining from dissociation of exciton XA is involved in the creation of this trion with a binding energy ˜10 meV with respect to XA. The absorption peak corresponding to trion T2 appears when λpump<2.4 eV , which is just sufficient to excite exciton XB. The dynamics of trion T2 formation are found to correlate with the disappearance of the bleach of the XB exciton, indicating the involvement of holes participating in the bleach dynamics of exciton XB. Static electrical-doping photoabsorption measurements confirm the presence of an induced absorption peak similar to that of T2. Since the proposed trion formation process here involves exciton dissociation through hole trapping by defects in the 2D crystal or substrate, this discovery highlights the strong role of defects in defining optical and electrical properties of 2D metal chalcogenides, which is relevant to a broad spectrum of basic science and technological applications.

Electron Impact Ionization Cross Sections in Rb and Cs.

NASA Astrophysics Data System (ADS)

Reddish, T. J.; Lukomski, M.; Sutton, S.; Kedzierski, W.; McConkey, J. W.; Bartschat, K.; Bartlett, P. L.; Stelbovics, A. T.; Bray, I.

2006-05-01

We present a new atom trapping technique for determining absolute, total ionisation cross sections (TICS) out of an excited atom. The novel feature of this method is in utilizing Doppler cooling of neutral atoms to determine ionisation cross sections. This fluorescence-monitoring experiment, which is a variant of the `trap loss' technique, has enabled us to obtain the experimental electron impact ionisation cross sections out of the Cs 6^2P3/2 excited state between 7 - 400 eV. New CCC, R-Matrix with Pseudo-States (RMPS), and Born approximation single ionisation cross sections (SICS) are also presented for both the ground and excited states of Cs and Rb, and compared with the available experimental data. The comparison of the results reveals the importance of the autoionisation and multiple ionisation contributions to the TICS. The autoionisation contribution appears to be substantial for ionisation out of the Cs 6^2P and Rb 5^2P excited states; ˜ 3-4 larger than the direct ionisation contribution predicted by CCC at ˜ 30-50 eV. This surprising result shows the importance of multi-electron processes in determining the ionisation cross sections of heavy alkali atoms.

Extreme Ultraviolet Spectra of Few-Times Ionized Tungsten for Divertor Plasma Diagnostics

DOE PAGES

Clementson, Joel; Lennartsson, Thomas; Beiersdorfer, Peter

2015-09-09

The extreme ultraviolet (EUV) emission from few-times ionized tungsten atoms has been experimentally studied at the Livermore electron beam ion trap facility. The ions were produced and confined during low-energy operations of the EBIT-I electron beam ion trap. By varying the electron-beam energy from around 30–300 eV, tungsten ions in charge states expected to be abundant in tokamak divertor plasmas were excited, and the resulting EUV emission was studied using a survey spectrometer covering 120–320 Å. It is found that the emission strongly depends on the excitation energy; below 150 eV, it is relatively simple, consisting of strong isolated linesmore » from a few charge states, whereas at higher energies, it becomes very complex. For divertor plasmas with tungsten impurity ions, this emission should prove useful for diagnostics of tungsten flux rates and charge balance, as well as for radiative cooling of the divertor volume. Several lines in the 194–223 Å interval belonging to the spectra of five- and seven-times ionized tungsten (Tm-like W VI and Ho-like W VIII) were also measured using a high-resolution spectrometer.« less

VUV action spectroscopy of protonated leucine-enkephalin peptide in the 6-14 eV range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ranković, M. Lj.; Canon, F.; Nahon, L.

2015-12-28

We have studied the Vacuum Ultraviolet (VUV) photodissociation of gas-phase protonated leucine-enkephalin peptide ion in the 5.7 to 14 eV photon energy range by coupling a linear quadrupole ion trap with a synchrotron radiation source. We report VUV activation tandem mass spectra at 6.7, 8.4, and 12.8 eV photon energies and photodissociation yields for a number of selected fragments. The obtained results provide insight into both near VUV radiation damage and electronic properties of a model peptide. We could distinguish several absorption bands and assign them to particular electronic transitions, according to previous theoretical studies. The photodissociation yields appear tomore » be very different for the various observed fragmentation channels, depending on both the types of fragments and their position along the peptide backbone. The present results are discussed in light of recent gas-phase spectroscopic data on peptides.« less

VUV action spectroscopy of protonated leucine-enkephalin peptide in the 6-14 eV range

DOE PAGES

Ranković, M. Lj.; Canon, F.; Nahon, L.; ...

2015-12-29

We have studied the VUV photodissociation of gas-phase protonated leucine-enkephalin peptide ion in the 5.7 to 14 eV photon energy range by coupling a linear quadrupole ion trap with a synchrotron radiation source. We report VUV activation tandem mass spectra at 6.7, 8.4 and 12.8 eV photon energies and photodissociation yields for a number of selected fragments. The obtained results provide insights into both near VUV radiation damage and electronic properties of a model peptide. We could distinguish several absorption bands and assign them to particular electronic transitions, according to previous theoretical studies. Furthermore, the photodissociation yields appear to bemore » very different for the various observed fragmentation channels, depending both on the type of fragments and their position along the peptide backbone. The present results are discussed in light of recent gas-phase spectroscopic data on peptides.« less

Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

2017-07-01

In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

Features of an annealing-induced thermoluminescence peak in α-Al2O3:C,Mg

NASA Astrophysics Data System (ADS)

Kalita, J. M.; Chithambo, M. L.

2017-08-01

We report the thermoluminescence glow curves of beta irradiated single crystal α-Al2O3:C,Mg after annealing at 700 and 900 °C. A glow curve measured at 1 °C/s from samples irradiated to 1 Gy following annealing at 700 and 900 °C shows a high intensity peak at 163 °C and seven secondary peaks of weaker intensity at 43, 73, 100, 195, 280, 329 and 370 °C. Comparing the position of the peaks in the annealed samples with those in an un-annealed one, it is observed that the peak at 100 °C appears only after annealing at and above 700 °C. Kinetic analysis of this annealing-induced peak was carried out using the initial rise, whole glow peak, peak shape, curve fitting and variable heating rate methods. The order of kinetics of the peak was determined as first order using various methods including the Tm-Tstop technique and the dependence of Tm on irradiation dose. The activation energy of the peak is about 1.01 eV and the frequency factor of the order of 1012 s-1. The peak was found to be affected by thermal quenching in analysis based on change of peak intensity with heating rate. The activation energy of thermal quenching was evaluated as 1.06 ± 0.08 eV. We speculate that the annealing-induced peak is due to formation of a new electron trap after destruction of the F22+(2 Mg) centre when the sample is annealed at 700 °C. The annealing-induced peak fades with storage between irradiation and measurement. It was also concluded that electrons from traps corresponding to secondary peaks get re-trapped at the main electron trap.

Spectra of W19 +-W32 + observed in the EUV region between 15 and 55 Å with an electron-beam ion trap

NASA Astrophysics Data System (ADS)

Sakaue, H. A.; Kato, D.; Yamamoto, N.; Nakamura, N.; Murakami, I.

2015-07-01

We present extreme ultraviolet spectra of highly charged tungsten ions (W19 +-W32 + ) in the wavelength range of 15 -55 Å obtained with a compact electron-beam ion trap (CoBIT) and a grazing-incidence spectrometer at the National Institute for Fusion Science. The electron energy dependence of the spectra was investigated for electron energies from 490 to 1320 eV . Identification of the observed lines was aided by collisional-radiative (CR) modeling of CoBIT plasma. Good quantitative agreement was obtained between the CR-modeling results and the experimental observations. The ion charge dependence of the 6 g -4 f ,5 g -4 f ,5 f -4 d ,5 p -4 d , and 4 f -4 d transition wavelengths were measured.

Non-Volatile High Speed & Low Power Charge Trapping Devices

NASA Astrophysics Data System (ADS)

Kim, Moon Kyung; Tiwari, Sandip

2007-06-01

We report the operational characteristics of ultra-small-scaled SONOS (below 50 nm gate width and length) and SiO2/SiO2 structural devices with 0.5 um gate width and length where trapping occurs in a very narrow region. The experimental work summarizes the memory characteristics of retention time, endurance cycles, and speed in SONOS and SiO2/SiO2 structures. Silicon nitride has many defects to hold electrons as charge storage media in SONOS memory. Defects are also incorporated during growth and deposition in device processing. Our experiments show that the interface between two oxides, one grown and one deposited, provides a remarkable media for electron storage with a smaller gate stack and thus lower operating voltage. The exponential dependence of the time on the voltage is reflected in the characteristic energy. It is ˜0.44 eV for the write process and ˜0.47 eV for the erase process in SiO2/SiO2 structural device which is somewhat more efficient than those of SONOS structure memory.

Thermal and Optical Characteristics of Defect Centers in Irradiated TLD-100 Dosimeters.

NASA Astrophysics Data System (ADS)

Sadeghi-Zamani, Hossein

Sensitivity loss of a sensitized LiF:Mg,Ti,Al (TLD-100) dosimeter subject to repeated standard 673 K thermal treatments has been a major problem in radiation dosimetry. The cause for this loss in radiation response of the dosimeters has not been understood. If a used TLD is not annealed at an elevated temperature prior to reuse, there are residual deep electron trap centers still present in the dosimeter. These defect centers will interact with new incoming radiation and produce thermoluminescent trap centers. This will introduce a significant error in low dose measurements. In this research, first, thermal and optical characteristics of various defect centers produced in an irradiated TLD-100 single crystal were investigated and then an improved pre-irradiation isothermal/optical treatment process was introduced to bleach the TLD dosimeters prior to reuse and reduce the loss of sensitivity of sensitized dosimeter. Thermoluminescent materials were irradiated by gamma-rays from Co-60 source to produce sufficient concentration of various defect centers, then the crystals were heated or exposed to UV light at different temperature to change the concentration of various defect centers. The change in concentration of each trap center was determined by measuring the change in absorbance of light at a fixed photon energy as a function of temperature. The thermal activation energy and the frequency factor for each trap center were evaluated assuming a first order kinetic model over a specified temperature range. The value of activation energy and the frequency factor for Z_2 ^', Z_2, Z_3, and F trap centers in TLD-100 single crystals were found to be 1.49 +/- 0.04 eV, 4.76 times 10 ^{15} sec^{ -1}, 2.23 +/- 0.02 eV, 1.65 times 10^{23 } sec^{-1}; 3.01 +/- 0.02 eV, 2.90 times 10^{17} sec ^{-1}; and 2.81 +/- 0.08 eV, 5.43 times 10 ^{17} sec^{ -1}; respectively. After a correlation was made between the trap centers and TL glow peaks, kinetic parameters obtained from absorption spectrum analysis were used to obtain a mathematical model describing different glow peaks.

Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements

NASA Astrophysics Data System (ADS)

Tsia, J. M.; Ling, C. C.; Beling, C. D.; Fung, S.

2002-09-01

A plus-or-minus100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (Ea=0.81plus-or-minus0.15 eV) and EL6 (Ea=0.30plus-or-minus0.12 eV) have been identified.

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE PAGES

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; ...

2017-06-06

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

Internal Photoemission at Interaces of ALD TaiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Chou, H. Y.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-12-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by surface photovoltage spectroscopy

NASA Astrophysics Data System (ADS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.

2017-12-01

Spatial and spectral origin of deep level defects in molecular beam epitaxy grown AlGaN/GaN heterostructures are investigated by using surface photovoltage spectroscopy (SPS) and pump-probe SPS techniques. A deep trap center ∼1 eV above the valence band is observed in SPS measurements which is correlated with the yellow luminescence feature in GaN. Capture of electrons and holes is resolved by performing temperature dependent SPS and pump-probe SPS measurements. It is found that the deep trap states are distributed throughout the sample while their dominance in SPS spectra depends on the density, occupation probability of deep trap states and the background electron density of GaN channel layer. Dynamics of deep trap states associated with GaN channel layer is investigated by performing frequency dependent photoluminescence (PL) and SPS measurements. A time constant of few millisecond is estimated for the deep defects which might limit the dynamic performance of AlGaN/GaN based devices.

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

NASA Astrophysics Data System (ADS)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Local-time survey of plasma at low altitudes over the auroral zones.

NASA Technical Reports Server (NTRS)

Frank, L. A.; Ackerson, K. L.

1972-01-01

Local-time survey of the low-energy proton and electron intensities precipitated into the earth's atmosphere over the auroral zones during periods of magnetic quiescence. This survey was constructed by selecting a typical individual satellite crossing of this region in each of eight local-time sectors from a large library of similar observations with the polar-orbiting satellite Injun 5. The trapping boundary for more-energetic electron intensities, E greater than 45 keV, was found to be a 'natural coordinate' for delineating the boundary between the two major types of lower-energy, 50 less than or equal to E less than or equal to 15,000 eV, electron precipitation commonly observed over the auroral zones at low altitudes. Poleward of this trapping boundary inverted 'V' electron precipitation bands are observed in all local-time sectors. These inverted 'V' electron bands in the evening and midnight sectors are typically more energetic and have greater latitudinal widths than their counterparts in the noon and morning sectors. In general, the main contributors to the electron energy influx into the earth's atmosphere over the auroral zones are the electron inverted 'V' precipitation poleward of the trapping boundary in late evening, the plasma-sheet electron intensities equatorward of this boundary in early morning, and both of these precipitation events near local midnight.

Constraints on Exotic Dipole-Dipole Couplings between Electrons at the Micrometer Scale

NASA Astrophysics Data System (ADS)

Kotler, Shlomi; Ozeri, Roee; Kimball, Derek F. Jackson

2015-08-01

New constraints on exotic dipole-dipole interactions between electrons at the micrometer scale are established, based on a recent measurement of the magnetic interaction between two trapped 88Sr+ ions. For light bosons (mass≤0.1 eV ) we obtain a 90% confidence interval for an axial-vector-mediated interaction strength of |gAegAe/4 π ℏc | ≤1.2 ×10-17 . Assuming C P T invariance, this constraint is compared to that on anomalous electron-positron interactions, derived from positronium hyperfine spectroscopy. We find that the electron-electron constraint is 6 orders of magnitude more stringent than the electron-positron counterpart. Bounds on pseudoscalar-mediated interaction as well as on torsion gravity are also derived and compared with previous work performed at different length scales. Our constraints benefit from the high controllability of the experimental system which contained only two trapped particles. It therefore suggests a useful new platform for exotic particle searches, complementing other experimental efforts.

Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

NASA Astrophysics Data System (ADS)

Elfimchev, S.; Chandran, M.; Akhvlediani, R.; Hoffman, A.

2017-07-01

In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360-520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very effective at elevated temperatures.

Negative thermal quenching of the defects in GaInP top cell with temperature-dependent photoluminescence analysis

NASA Astrophysics Data System (ADS)

Junling, Wang; Rui, Wu; Tiancheng, Yi; Yong, Zheng; Rong, Wang

2018-01-01

Temperature-dependent photoluminescence (PL) measurements were carried out to investigate the irradiation effects of 1.0 MeV electrons on the n+- p GaInP top cell of GaInP/GaAs/Ge triple-junction solar cells in the 10-300 K temperature range. The PL intensities plotted against inverse temperature in an Arrhenius plot shows a thermal quenching behavior from 10 K to 140 K and an unusual negative thermal quenching (NTQ) behavior from 150 K to 300 K. The appearance of the PL thermal quenching with increasing temperature confirms that there is a nonradiative recombination center, i.e., the H2 hole trap located at Ev + 0.55 eV, in the cell after electron irradiation. The PL negative thermal quenching behavior may tentatively be attributed to the intermediate states at an energy level of 0.05 eV within the band gap in GaInP top cell.

Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Izumi, Kohei; Otani, Yohei; Ishizaki, Hiroki; Ono, Toshiro

2012-09-01

This paper reports on the thermal improvement of Si3N4/GeNx/Ge structures. After the Si3N4 (5 nm)/GeNx (2 nm) stacks were prepared on Ge substrates by electron-cyclotron-resonance plasma nitridation and sputtering at room temperature, they were thermally annealed in atmospheric N2 + 10% H2 ambient at temperatures from 400 to 600 °C. It was demonstrated that the electronic properties of the GeNx/Ge interfaces were thermally improved at temperatures of up to 500 °C with a minimum interface trap density (Dit) of ˜1×1011 cm-2 eV-1 near the Ge midgap, whereas the interface properties were slightly degraded after annealing at 600 °C with a minimum Dit value of ˜4×1011 cm-2 eV-1.

Titanium in silicon as a deep level impurity

NASA Technical Reports Server (NTRS)

Chen, J.-W.; Milnes, A. G.; Rohatgi, A.

1979-01-01

Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K.

Quenched-in defects in flashlamp-annealed silicon

NASA Technical Reports Server (NTRS)

Borenstein, J. T.; Jones, J. T.; Corbett, J. W.; Oehrlein, G. S.; Kleinhenz, R. L.

1986-01-01

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Localised and delocalised optically induced conversion of composite glow peak 5 in LiF:Mg,Ti (TLD-100) to glow peak 4 as a function of postirradiation annealing temperature.

PubMed

Horowitz, Y S; Einav, Y; Biderman, S; Oster, L

2002-01-01

The composite structure of glow peak 5 in LiF:Mg,Ti (TLD-100) has been investigated using optical bleaching by 310 nm (4 eV) light. The glow peak conversion efficiency of peak 5a (Tm = 187 degrees C) to peak 4 traps is very high at a value of 3+/-0.5 (1 SD) whereas the glow peak conversion efficiency of peak 5 (Tm = 205 degrees C) to peak 4 traps is 0.0026+/-0.0012 (1 SD). The high conversion efficiency of peak 5a to peak 4 arises from direct optical ionisation of the electron in the electron-hole pair. leaving behind a singly-trapped hole (peak 4), a direct mechanism, relatively free of competitive mechanisms. Optical ionisation of the 'singly-trapped' electron (peak 5), however, can lead to peak 4 only via multi-stage mechanisms involving charge carrier transport in the valence and conduction bands, a mechanism subject to competitive processes. The conduction/valence band competitive processes lead to the factor of one thousand decrease in the conversion efficiency of peak 5 compared to peak 5a.

Electrical characterization of n/p-type nickel silicide/silicon junctions by Sb segregation.

PubMed

Jun, Myungsim; Park, Youngsam; Hyun, Younghoon; Choi, Sung-Jin; Zyung, Taehyung; Jang, Moongyu

2011-08-01

In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity.

Observation of two distinct negative trions in tungsten disulfide monolayers

DOE PAGES

Boulesbaa, Abdelaziz; Huang, Bing; Wang, Kai; ...

2015-09-25

We report on the observation of two distinct photogenerated negative trion states T A and T B in two-dimensional tungsten disulfide (2D-WS 2) monolayers. These trions are postulated to emerge from their parent excitons X A and X B, which originate from spin-orbit-split (SOS) levels in the conduction band (CB) and valence band (VB). Time-resolved spectroscopy measurements suggests that Pauli blocking controls a competition process between T A and T B photoformation, following dissociation of X A and X B through hole trapping at internal or substrate defect sites. While T A arises directly from its parent X A, Tmore » B emerges through a different transition accessible only after X B dissociates through a hole trapping channel. This discovery of additional optically-active band-edge transitions in atomically-thin metal dichalcogenides may revolutionize optoelectronic applications and fundamental research opportunities for many-body interaction physics. Ultrafast pump-probe spectroscopy of two-dimensional tungsten disulfide monolayers (2D-WS 2) grown on sapphire substrates revealed two transient absorption spectral peaks that are attributed to distinct negative trions at ~2.02 eV (T 1) and ~1.98 eV (T 2). The dynamics measurements indicate that trion formation by the probe is enabled by photodoped electrons that remain after trapping of holes from excitons or free electron-hole pairs at defect sites in the crystal or on the substrate. Dynamics of the excitons X A and X B’s characteristic absorption bands, at ~2.03 and ~2.40 eV, respectively, were separately monitored and compared with the photoinduced absorption features. Selective excitation of the lowest exciton level X A using λ pump < 2.4 eV forms only trion T 1, which implies that the electron that remains from the dissociation of exciton X A is involved in the creation of this trion with a binding energy ~ 10 meV with respect to X A. The absorption peak that corresponds to trion T 2 appears when λ pump > 2.4 eV, which is just sufficient to excite exciton X B. The dynamics of trion T 2 formation are found to correlate with the disappearance of the bleach of X B exciton, which indicates the involvement of holes participating in the bleach dynamics of exciton X B. Static electrical-doping photoabsorption measurements confirm the presence of an induced absorption peak similar to that of T 2. Since the proposed trion formation process here involves exciton dissociation through hole-trapping by defects in the 2D crystal or substrate, this discovery highlights the strong role that defects have in defining the optical and electrical properties of 2D metal chalcogenides, which is relevant to a broad spectrum of basic science and technology applications.« less

Development of a simulation method for dynamics of electrons ejected from DNA molecules irradiated with X-rays.

PubMed

Kai, Takeshi; Higuchi, Mariko; Fujii, Kentaro; Watanabe, Ritsuko; Yokoya, Akinari

2012-12-01

To develop a method for simulating the dynamics of the photoelectrons and Auger electrons ejected from DNA molecules irradiated with pulsed monochromatic X-rays. A 30-base-pair (bp) DNA molecule was used as the target model, and the X-rays were assumed to have a Gaussian-shaped time distribution. Photoionization and Auger decay were considered as the atomic processes. The atoms from which the photoelectrons or Auger electrons were emitted were specified in the DNA molecule (or DNA ion) using the Monte Carlo method, and the trajectory of each electron in the electric field formed around the positively charged DNA molecule was calculated with a Newtonian equation. The kinetics of the electrons produced by irradiation with X-rays at an intensity ranging from 1 × 10(12) to 1 × 10(16) photons/mm(2) and energies of 380 eV (below the carbon K-edge), 435 eV (above the nitrogen K-edge), and 560 eV (above the oxygen K-edge) were evaluated. It was found that at an X-ray intensity of 1 × 10(14) photons/mm(2) or less, all the produced electrons escaped from the target. However, above an X-ray intensity of 1 × 10(15) photons/mm(2) and an energy of 560 eV, some photoelectrons that were ejected from the oxygen atoms were trapped near the target DNA. A simulation method for studying the trajectories of electrons ejected from a 30-bp DNA molecule irradiated with pulsed monochromatic X-rays has been developed. The present results show that electron dynamics are strongly dependent on the charged density induced in DNA by pulsed X-ray irradiation.

A comparison of point defects in Cd1-xZnxTe1-ySey crystals grown by Bridgman and traveling heater methods

NASA Astrophysics Data System (ADS)

Gul, R.; Roy, U. N.; Camarda, G. S.; Hossain, A.; Yang, G.; Vanier, P.; Lordi, V.; Varley, J.; James, R. B.

2017-03-01

In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.

Acoustic Enrichment of Extracellular Vesicles from Biological Fluids.

PubMed

Ku, Anson; Lim, Hooi Ching; Evander, Mikael; Lilja, Hans; Laurell, Thomas; Scheding, Stefan; Ceder, Yvonne

2018-06-11

Extracellular vesicles (EVs) have emerged as a rich source of biomarkers providing diagnostic and prognostic information in diseases such as cancer. Large-scale investigations into the contents of EVs in clinical cohorts are warranted, but a major obstacle is the lack of a rapid, reproducible, efficient, and low-cost methodology to enrich EVs. Here, we demonstrate the applicability of an automated acoustic-based technique to enrich EVs, termed acoustic trapping. Using this technology, we have successfully enriched EVs from cell culture conditioned media and urine and blood plasma from healthy volunteers. The acoustically trapped samples contained EVs ranging from exosomes to microvesicles in size and contained detectable levels of intravesicular microRNAs. Importantly, this method showed high reproducibility and yielded sufficient quantities of vesicles for downstream analysis. The enrichment could be obtained from a sample volume of 300 μL or less, an equivalent to 30 min of enrichment time, depending on the sensitivity of downstream analysis. Taken together, acoustic trapping provides a rapid, automated, low-volume compatible, and robust method to enrich EVs from biofluids. Thus, it may serve as a novel tool for EV enrichment from large number of samples in a clinical setting with minimum sample preparation.

Introduction to Time of Flight Positron Annihilation Induced Auger Spectroscopy (TOF-PAES)

NASA Astrophysics Data System (ADS)

Joglekar, Prasad; Kalaskar, Sushant; Shastry, Karthik; Satyal, Suman; Weiss, Alex

2009-10-01

Time of flight- positron annihilation induced auger electron spectroscopy (TOF-PAES) is extremely surface selective with close to 95% of the PAES signal stemming from the top-most atomic layer. In PAES, a beam of low energy (1eV -- 25eV) positrons is made incident on a surface where they become trapped in an image potential well. A fraction (up to several percent) of the positrons in the surface state annihilate with the core electrons of atoms at the surface resulting in core-holes. Electrons in higher levels can fill these core-hole via an Auger transition in which the energy associated with this filling the core hole is transferred to another electron which can leave the atom and the surface. The energy of the outgoing (Auger) electrons is characteristic of the energy levels of the atom and can be used to identify the specific element taking part in the transition. In this talk I will present a brief review of how the TOF PAES technique can be used to obtain Auger spectra that is completely free of secondary electron background.

Studying electron-PAG interactions using electron-induced fluorescence

NASA Astrophysics Data System (ADS)

Narasimhan, Amrit; Grzeskowiak, Steven; Ostrander, Jonathan; Schad, Jonathon; Rebeyev, Eliran; Neisser, Mark; Ocola, Leonidas E.; Denbeaux, Gregory; Brainard, Robert L.

2016-03-01

In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists. Typical EUV resists are organic-based and chemically amplified using photoacid generators (PAGs). Upon exposure, PAGs produce acids which catalyze reactions that result in changes in solubility. In EUV lithography, photo- and secondary electrons (energies of 10- 80 eV) play a large role in PAG acid-production. Several mechanisms for electron-PAG interactions (e.g. electron trapping, and hole-initiated chemistry) have been proposed. The aim of this study is to explore another mechanism - internal excitation - in which a bound PAG electron can be excited by receiving energy from another energetic electron, causing a reaction that produces acid. This paper explores the mechanism of internal excitation through the analogous process of electron-induced fluorescence, in which an electron loses energy by transferring that energy to a molecule and that molecule emits a photon rather than decomposing. We will show and quantify electron-induced fluorescence of several fluorophores in polymer films to mimic resist materials, and use this information to refine our proposed mechanism. Relationships between the molecular structure of fluorophores and fluorescent quantum yield may aid in the development of novel PAGs for EUV lithography.

Scattering of magnetic mirror trapped electrons by an Alfven wave

NASA Astrophysics Data System (ADS)

Wang, Y.; Gekelman, W. N.; Pribyl, P.; Papadopoulos, K.; Karavaev, A. V.; Shao, X.; Sharma, A. S.

2010-12-01

Highly energetic particles from large solar flares or other events can be trapped in the Earth’s magnetic mirror field and pose a danger to intricate space satellites. Aiming for artificially de-trapping these particles, an experimental and theoretical study of the interactions of a shear Alfven wave with electrons trapped in a magnetic mirror was performed on the Large Plasma Device (LaPD) at UCLA, with critical parameter ratios matched in the lab plasma to those in space. The experiment was done in a quiescent afterglow plasma with ne≈5×1011cm-3, Te≈0.5eV, B0≈1000G, L=18m, and diameter=60cm. A magnetic mirror was established in LaPD (mirror ratio≈1.5, Lmirror≈3m). An electron population with large v⊥ (E⊥≈1keV) was introduced by microwave heating at upper-hybrid frequency with a 2.45GHz pulsed microwave source at up to 5kW. A shear Alfven wave with arbitrary polarization (fwave≈0.5fci , Bwave/B0≈0.5%) was launched by a Rotating Magnetic Field (RMF) antenna axially 2m away from the center of the mirror. It was observed that the Alfven wave effectively eliminated the trapped electrons. A diagnostic probe was developed for this experiment to measure electrons with large v⊥ in the background plasma. Plasma density and temperature perturbations from the Alfven wave were observed along with electron scattering. Computer simulations tracking single particle motion with wave field are ongoing. In these the Alfven wave’s effect on the electrons pitch angle distribution by a Monte-Carlo method is studied. Planned experiments include upgrading the microwave source for up to 100kW pulses to make electrons with higher transverse energy and longer mirror trapping time. This work is supported by The Office of Naval Research under a MURI award. Work was done at the Basic Plasma Science Facility which is supported by DOE and NSF.

Electronic effects of Se and Pb dopants in TlBr

NASA Astrophysics Data System (ADS)

Smith, Holland M.; Phillips, David J.; Sharp, Ian D.; Beeman, Jeffrey W.; Chrzan, Daryl C.; Haegel, Nancy M.; Haller, Eugene E.; Ciampi, Guido; Kim, Hadong; Shah, Kanai S.

2012-05-01

Deep levels in Se- and Pb-doped bulk TlBr detectors were characterized with photo-induced conductivity transient spectroscopy (PICTS) and cathodoluminescence (CL). Se-doped TlBr revealed two traps with energies of 0.35 and 0.45 eV in PICTS spectra. The Pb-doped material revealed three levels with energies of 0.11, 0.45, and 0.75 eV. CL measurements in both materials correlate with optical transitions involving some of the identified levels. The ambipolar carrier lifetimes of Se-doped and Pb-doped TlBr were measured with microwave reflectivity transients and found to be significantly lower than the lifetime of undoped TlBr.

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

NASA Astrophysics Data System (ADS)

Colleoni, Davide; Pourtois, Geoffrey; Pasquarello, Alfredo

2017-03-01

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at ˜1 eV above the conduction band minimum of In0.53Ga0.47As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer.

Localised states in organic semiconductors and their detection

NASA Astrophysics Data System (ADS)

Imperia, Paolo

2002-06-01

New polymers and low molecular compounds, suitable for organic light emitting devices and organic electronic applications, have been synthesised in this years in order to obtain electron transport characteristics compatible with requirements for applications in real plastic devices. However, despite of the technological importance and of the relevant progress in devices manufacture, fundamental physical properties of such class of materials are still not enough studied. In particular extensive presence of distributions of localised states inside the band gap has a deep impact on their electronic properties. Such presence of shallow traps as well as the influence of the sample preparation conditions on deep and shallow localised states have not been, until now, systematically explored. The thermal techniques are powerful tools in order to study localised levels in inorganic and organic materials. Thermally stimulated luminescence (TSL), thermally stimulated currents (TSC) and thermally stimulated depolarisation currents (TSDC) allow to deeply look to shallow and deep trap levels as well as they permit to study, in synergy with dielectric spectroscopy (DES), polarisation and depolarisation effects. We studied, by means of numerical simulations, the first and the second order kinetic equations characterised by negligible and strong re-trapping respectively. We included in the equations Gaussian, exponential and quasi-continuous distributions of localised states. The shapes of the theoretical peaks have been investigated by means of systematic variation of the two main parameters of the equations, i. e. the energy trap depth E and the frequency factor a and of the parameters regulating the distributions, in particular for a Gaussian distribution the distribution width s and the integration limits. The theoretical findings have been applied to experimental glow curves. Thin films of polymers and low molecular compounds. Polyphenylquinoxalines, trisphenylquinoxalines and oxadiazoles, studied because of their technological relevance, show complex thermograms, having several levels of localised states and depolarisation peaks. In particular well ordered films of an amphiphilic substituted 2-(p-nitrophenyl)-5-(p-undecylamidophenyl)-1,3,4-oxadiazole (NADPO) are characterised by rich TSL thermograms. A wide region of shallow traps, localised at Em = 4 meV, has been successfully fit by means of a first order kinetic equation having a Gaussian distribution of localised states. Two further peaks, having a different origin, have been characterised. The peaks at Tm = 221.5 K and Tm = 254.2 have activation energy of Em= 0.63 eV and Em = 0.66 eV, frequency factor s = 2.4x1012 s-1 and s = 1.85x1011 s-1, distribution width s = 0.045 eV and s = 0.088 eV respectively. Increasing the number of thermal cycle, a peak, probably connected with structural defects, appears at Tm = 197.7 K. The numerical analysis of this peak was performed by means of a first order equation containing a Gaussian distribution of traps. The activation energy of the trap level is centred at Em = 0.55 eV. The distribution is perfectly symmetric with a quite small width s = 0.028 eV. The frequency factor is s = 1.15 x 1012 s-1, resulting of the same order of magnitude of its neighbour peak at Tm = 221.5 K, having both, probably, the same origin. Furthermore the work demonstrates that the shape of the glow curves is strongly influenced by the excitation temperature and by the thermal cycles. For that reason Gaussian distributions of localised states can be confused with exponential distributions if the previous thermal history of the samples is not adequately considered. In den letzten Jahren ist eine Vielzahl neuer organischer Polymere und niedermolekularer Verbindungen synthetisiert worden, die sich als aktive Komponente für Elektrolumineszenz-Bauelemente und andere elektronische Anwendungen eignen. Trotz der großen technologischen Bedeutung und des erheblichen Fortschrittes, der bei der Herstellung solcher Materialien erzielt worden ist, sind grundlegende physikalische Eigenschaften dieser Materialklassen noch nicht ausreichend erforscht. Insbesondere das Auftreten lokalisierter Zustände innerhalb der Bandlücke hat besondere Bedeutung für ihre elektronischen Eigenschaften. Sowohl die Präsenz dieser flachen traps (Fallen, Löcher) als auch der Einfluß der Herstellungsbedingungen auf die tiefen und flachen lokalisierten Zustände wurden bisher nicht systematisch untersucht. Thermische Techniken sind wichtige Methoden, um lokalisierte Niveaus in organischen und anorganischen Materialien zu erforschen. Themisch-Stimulierte Lumineszenz (TSL), Thermisch-Stimulierte Ströme (TSC) und Thermisch-Stimulierte Depolarisierte Ströme (TSDC) ermöglichen die Untersuchung flacher und tiefer traps; in Verbindung mit DiElektrischer Spektroskopie (DES) können außerdem Polarisations- und Depolarisationseffekte studiert werden. Mit Hilfe numerischer Simulationen haben wir die kinetischen Gleichungen erster und zweiter Ordnung untersucht, die sich durch schwaches bzw. starkes Wieder-Fangen beschreiben lassen. In diesen Gleichungen haben wir Gaussian-, exponentielle und quasi-kontinuierliche Verteilungen von lokalisierten Zustände berücksichtigt. Durch Veränderung der beiden wichtigsten Parameter (Tiefe der traps E und Häufigkeit) konnte die Form der thermischen Maxima untersucht werden. Auch die die Gaussian-Verteilung bestimmenden Faktoren wurden verändert. Diese theoretischen Ergebnisse wurden auf die experimentellen Glow-Kurven angewandt. Dünne Filme aus polymeren und niedermolekularen Verbindungen (Polyphenylquinoxaline, Trisphenylquinoxaline und Oxadiazole), die wegen ihrer technologischen Bedeutung ausgewählt wurden, zeigen komplexes thermisches Verhalten. Insbesondere hoch geordnete Filme eines amphiphil substituierten 2-(p-nitrophenyl)-5-(p-undecylamidophenyl)-1,3,4-oxadiazols (NADPO) zeichnen sich durch komplexe TSL-Diagramme aus. Im Bereich von Em = 4 meV wurde eine Region flacher traps gefunden. Zwei weitere TSL-Maxima treten bei Tm = 221.5 K bzw. Tm = 254.2 K auf. Sie besitzen Aktivierungsenergien von Em= 0.63 eV bzw. Em = 0.66 eV, ihre Frequenzfaktoren betragen s = 2.4x1012 s-1 bzw. s = 1.85x1011 s-1, sie zeigen Breiten der Verteilung von s = 0.045 eV bzw. s = 0.088 eV. Des weiteren zeigt diese Arbeit, daß die Form der Glow-Kurven stark von der Anregungstemperatur und vom thermischen Kreislauf beeinflußt wird.

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

2011-07-01

We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

Magnetically confined electron beam system for high resolution electron transmission-beam experiments

NASA Astrophysics Data System (ADS)

Lozano, A. I.; Oller, J. C.; Krupa, K.; Ferreira da Silva, F.; Limão-Vieira, P.; Blanco, F.; Muñoz, A.; Colmenares, R.; García, G.

2018-06-01

A novel experimental setup has been implemented to provide accurate electron scattering cross sections from molecules at low and intermediate impact energies (1-300 eV) by measuring the attenuation of a magnetically confined linear electron beam from a molecular target. High-resolution electron energy is achieved through confinement in a magnetic gas trap where electrons are cooled by successive collisions with N2. Additionally, we developed and present a method to correct systematic errors arising from energy and angular resolution limitations. The accuracy of the entire measurement procedure is validated by comparing the N2 total scattering cross section in the considered energy range with benchmark values available in the literature.

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

2015-01-01

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Long, Pengyu; Huang, Jun Z.; Povolotskyi, Michael; Sarangapani, Prasad; Valencia-Zapata, Gustavo A.; Kubis, Tillmann; Rodwell, Mark J. W.; Klimeck, Gerhard

2018-05-01

Tunnel Field Effect Transistors (FETs) have the potential to achieve steep Subthreshold Swing (S.S.) below 60 mV/dec, but their S.S. could be limited by trap-assisted tunneling (TAT) due to interface traps. In this paper, the effect of trap energy and location on OFF-current (IOFF) of tunnel FETs is evaluated systematically using an atomistic trap level representation in a full quantum transport simulation. Trap energy levels close to band edges cause the highest leakage. Wave function penetration into the surrounding oxide increases the TAT current. To estimate the effects of multiple traps, we assume that the traps themselves do not interact with each other and as a whole do not modify the electrostatic potential dramatically. Within that model limitation, this numerical metrology study points to the critical importance of TAT in the IOFF in tunnel FETs. The model shows that for Dit higher than 1012/(cm2 eV) IO F F is critically increased with a degraded IO N/IO F F ratio of the tunnel FET. In order to have an IO N/IO F F ratio higher than 104, the acceptable Dit near Ev should be controlled to no larger than 1012/(cm2 eV) .

Negative charge trapping effects in Al{sub 2}O{sub 3} films grown by atomic layer deposition onto thermally oxidized 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schilirò, Emanuela, E-mail: emanuela.schiliro@imm.cnr.it; Dipartimento di Scienze Chimiche, Università degli Studi di Catania, and INSTM udr Catania, viale Andrea Doria 6, 95125, Catania; Lo Nigro, Raffaella

This letter reports on the negative charge trapping in Al{sub 2}O{sub 3} thin films grown by atomic layer deposition onto oxidized silicon carbide (4H-SiC). The films exhibited a permittivity of 8.4, a breakdown field of 9.2 MV/cm and small hysteresis under moderate bias cycles. However, severe electron trapping inside the Al{sub 2}O{sub 3} film (1 × 10{sup 12} cm{sup −2}) occurs upon high positive bias stress (>10 V). Capacitance-voltage measurements at different temperatures and stress conditions have been used to determine an activation energy of 0.1 eV. The results provide indications on the possible nature of the trapping defects and,more » hence, on the strategies to improve this technology for 4H-SiC devices.« less

Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

NASA Astrophysics Data System (ADS)

Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

2017-11-01

The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

Investigation on H-containing shallow trap of hydrogenated TiO2 with in situ Fourier transform infrared diffuse reflection spectroscopy.

PubMed

Han, Bing; Hang Hu, Yun

2017-07-28

A novel technique, high temperature high pressure in situ Fourier transform infrared diffuse reflection spectroscopy, was successfully used to investigate the formation and stability of shallow trap states in P25 TiO 2 nanoparticles. Two types of shallow traps (with and without H atoms) were identified. The H-containing shallow trap can be easily generated by heating in H 2 atmosphere. However, the trap is unstable in vacuum at 600 °C. In contrast, the H-free shallow trap, which can be formed by heating in vacuum, is stable even at 600 °C. The energy gaps between shallow trap states and the conduction band are 0.09 eV for H-containing shallow trap and 0.13 eV for H-free shallow trap, indicating that the H-containing shallow trap state is closer to the conduction band than that without H.

Energy-filtered TEM imaging and EELS study of ODS particles and argon-filled cavities in ferritic-martensitic steels.

PubMed

Klimiankou, M; Lindau, R; Möslang, A

2005-01-01

Oxide-dispersion-strengthened (ODS) ferritic-martensitic steels with yttrium oxide (Y(2)O(3)) have been produced by mechanical alloying and hot isostatic pressing for use as advanced material in fusion power reactors. Argon gas, usually widely used as inert gas during mechanical alloying, was surprisingly detected in the nanodispersion-strengthened materials. Energy-filtered transmission electron microscopy (EFTEM) and electron energy loss spectroscopy (EELS) led to the following results: (i) chemical composition of ODS particles, (ii) voids with typical diameters of 1-6 nm are formed in the matrix, (iii) these voids are filled with Ar gas, and (iv) the high-density nanosized ODS particles serve as trapping centers for the Ar bubbles. The Ar L(3,2) energy loss edge at 245 eV as well as the absorption features of the ODS particle elements were identified in the EELS spectrum. The energy resolution in the EEL spectrum of about 1.0 eV allows to identify the electronic structure of the ODS particles.

Modelling deuterium release during thermal desorption of D +-irradiated tungsten

NASA Astrophysics Data System (ADS)

Poon, M.; Haasz, A. A.; Davis, J. W.

2008-03-01

Thermal desorption profiles were modelled based on SIMS measurements of implantation profiles and using the multi-trap diffusion code TMAP7 [G.R. Longhurst, TMAP7: Tritium Migration Analysis Program, User Manual, Idaho National Laboratory, INEEL/EXT-04-02352 (2004)]. The thermal desorption profiles were the result of 500 eV/D + irradiations on single crystal tungsten at 300 and 500 K to fluences of 10 22-10 24 D +/m 2. SIMS depth profiling was performed after irradiation to obtain the distribution of trapped D within the top 60 nm of the surface. Thermal desorption spectroscopy (TDS) was performed subsequently to obtain desorption profiles and to extract the total trapped D inventory. The SIMS profiles were calibrated to give D concentrations. To account for the total trapped D inventory measured by TDS, SIMS depth distributions were used in the near-surface (surface to 30 nm), NRA measurements [V.Kh. Alimov, J. Roth, M. Mayer, J. Nucl. Mater. 337-339 (2005) 619] were used in the range 1-7 μm, and a linear drop in the D distribution was assumed in the intermediate sub-surface region (˜30 nm to 1 μm). Traps were assumed to be saturated so that the D distribution also represented the trap distribution. Three trap energies, 1.07 ± 0.03, 1.34 ± 0.03 and 2.1 ± 0.05 eV were required to model the 520, 640 and 900 K desorption peaks, respectively. The 1.34 and 1.07 eV traps correspond to trapping of a first and second D atom at a vacancy, respectively, while the 2.1 eV trap corresponds to atomic D trapping at a void. A fourth trap energy of 0.65 eV was used to fit the 400 K desorption peak observed by Quastel et al. [A.D. Quastel, J.W. Davis, A.A. Haasz, R.G. Macaulay-Newcombe, J. Nucl. Mater. 359 (2006) 8].

Deuterium trapping in tungsten

NASA Astrophysics Data System (ADS)

Poon, Michael

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D irradiation. Deuterium trapping could be characterized by three regimes: (i) enhanced D retention in a graphitic film formed by the C+ irradiation; (ii) decreased D retention in a modified tungsten-carbon layer; and (iii) D retention in pure tungsten.

Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications

PubMed Central

Su, Ting; Zhang, Haifeng

2017-01-01

Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on the voltage and duration applied to the copper-doped ZnO films by Kelvin probe force microscopy. It is found that the Fermi Level of the 8 at.% Cu-doped ZnO films shifted by 0.53 eV comparing to undoped ZnO films. This shift indicates significant change in the electronic structure and energy balance in Cu-doped ZnO films. The Fermi Level (work function) of zinc oxide films can be tuned by Cu doping, which are important for developing this functional material. In addition, Kelvin probe force microscopy measurements demonstrate that the nature of contact at Pt-coated tip/ZnO:Cu interface is changed from Schottky contact to Ohmic contact by increasing sufficient amount of Cu ions. The charge trapping property of the ZnO films enhance greatly by Cu doping (~10 at.%). The improved stable bipolar charge trapping properties indicate that copper-doped ZnO films are promising for nonvolatile memory applications. PMID:28135335

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Localized excitons in fluoroperovskite LiBaF3 crystals

NASA Astrophysics Data System (ADS)

Springis, Maris; Trukhin, Anatoly N.; Tale, Ivar

2003-08-01

Two radiating processes in LiBaF3 crystals, fast valence-core transitions (5.4 - 6.5 eV) and slow, so called self-trapped exciton luminescence (about 4.3 eV), are important for practical application. Here we present a study of 4.3 eV luminescence under X-ray excitation and photoexcitation as well as under photostimulation after X-irradiation of undoped and Ag-doped LiBaF3 crystals at various temperatures. It is shown that 4.3 eV luminescence appears under X-ray excitation at least from 85 K to 400 K in both undoped and doped crystals. In all samples studied the excitation spectra of 4.3 eV luminescence contain both the main exciton like band at the edge of fundamental absorption at about 10 eV and weaker band in 7.8 - 8.6 eV region. Luminescence spectrum in the 3.8 - 4.8 eV region under 7.8 - 8.6 eV excitation differs slightly from that under 10 eV excitation. Several luminescence bands in 3.8 - 4.8 eV region arises in the temperature range 85 - 230 K under photostimulation in absorption band of F-type center at 2.9 eV created previously under X-irradiation. We propose the luminescence of LiBaF3 crystals in the 3.8 - 4.8 eV region may be caused by localized excitons formed not only under excitation near the fundamental absorption but also in result of electron recombination with localized holes thermally destroyed above 230 K.

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

PubMed

Gritsenko, Vladimir A; Perevalov, Timofey V; Voronkovskii, Vitalii A; Gismatulin, Andrei A; Kruchinin, Vladimir N; Aliev, Vladimir Sh; Pustovarov, Vladimir A; Prosvirin, Igor P; Roizin, Yakov

2018-01-31

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaO x films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaO x by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaO x conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaO x films is phonon-assisted tunneling between the traps.

Hydrogen interaction with ferrite/cementite interface: ab initio calculations and thermodynamics

NASA Astrophysics Data System (ADS)

Mirzoev, A. A.; Verkhovykh, A. V.; Okishev, K. Yu.; Mirzaev, D. A.

2018-02-01

The paper presents the results of ab initio modelling of the interaction of hydrogen atoms with ferrite/cementite interfaces in steels and thermodynamic assessment of the ability of interfaces to trap hydrogen atoms. Modelling was performed using the density functional theory with generalised gradient approximation (GGA'96), as implemented in WIEN2k package. An Isaichev-type orientation relationship between the two phases was accepted, with a habit plane (101)c ∥ (112)α. The supercell contained 64 atoms (56 Fe and 8 C). The calculated formation energies of ferrite/cementite interface were 0.594 J/m2. The calculated trapping energy at cementite interstitial was 0.18 eV, and at the ferrite/cementite interface - 0.30 eV. Considering calculated zero-point energy, the trapping energies at cementite interstitial and ferrite/cementite interface become 0.26 eV and 0.39 eV, respectively. The values are close to other researchers' data. These results were used to construct a thermodynamic description of ferrite/cementite interface-hydrogen interaction. Absorption calculations using the obtained trapping energy values showed that even thin lamellar ferrite/cementite mixture with an interlamellar spacing smaller than 0.1 μm has noticeable hydrogen trapping ability at a temperature below 400 K.

Axions and SN 1987A: Axion trapping

NASA Technical Reports Server (NTRS)

Burrows, Adam; Ressell, M. Ted; Turner, Michael S.

1990-01-01

If an axion of mass between about 10(exp -3) eV and 1 eV exists, axion emission would have significantly affected the cooling of the nascent neutron star associated with SN 1987A. For an axion of mass less than about 10(exp -2) eV, axions produced deep inside the neutron star simply stream out; in a previous paper this case has been addressed. Remarkably, for an axion of mass greater than about 10(exp -2) eV axions would, like neutrinos, have a mean-free path that is smaller than the size of a neutron star, and thus would become 'trapped' and radiated from an axion sphere. In this paper the trapping regime is treated by using numerical models of the initial cooling of a hot neutron star that incorporate a leakage approximation scheme for axion-energy transport. The axion opacity is computed due to inverse nucleon-nucleon, axion bremsstrahlung, and numerical models are used to calculate the integrated axion luminosity, the temperature of the axion sphere, and the effect of axion emission on the neutrino bursts detected by the Kamiokande 2 (K2) and Irvine-Michigan-Brookhaven (IMB) water-Cherenkov detectors. The larger the axion mass, the stronger the trapping and the smaller the axion luminosity. The earlier estimate is confirmed and refined of the axion mass above which trapping is so strong that axion emission does not significantly affect the neutrino burst. Based upon the neutrino-burst duration--the most sensitive barometer of axion cooling--it is concluded that for an axion mass of greater than about 0.3 eV, axion emission would not have had a significant effect on the neutrino bursts detected by K2 and IMB. The present work, together with the previous work, strongly suggests that an axion with mass in the interval 10(exp -3) eV to 0.3 eV is excluded by SN 1987A.

Synthesis, crystal and electronic structures and optical properties of (HIm) 2 Hg 3Cl 8 and (HIm)HgI 3 (HIm = imidazolium)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nhalil, Hariharan; Whiteside, Vincent R.; Sellers, Ian R.

Here, we report synthesis, crystal and electronic structures, and optical properties of two new Hg-based zero-dimensional hybrid organic-inorganic halides (HIm)2Hg3Cl8 and (HIm)HgI3 (HIm = imidazolium). (HIm) 2Hg 3Cl 8 crystallizes in the triclinic P-1 space group with a pseudo-layered structure made of organic imidazolium cation layers and anionic inorganic layers containing [Hg 2Cl 6] 2- units and linear [HgCl 2] 0 molecules. (HIm)HgI 3 crystallizes in the monoclinic P2 1/c space group featuring anionic [HgI 3]- units that are surrounded by imidazolium cations. Based on density functional theory calculations, (HIm) 2Hg 3Cl 8 has an indirect band gap, whereas (HIm)HgImore » 3 has a direct band gap with the measured onsets of optical absorption at 3.43 and 2.63 eV, respectively. (HIm) 2Hg 3Cl 8 and (HIm)HgI 3 are broadband light emitters with broad photoluminescence peaks centered at 548 nm (2.26 eV) and 582 nm (2.13 eV), respectively. In conclusion, following the crystal and electronic structure considerations, the PL peaks are assigned to self-trapped excitons.« less

Reversible photo-induced trap formation in mixed-halide hybrid perovskites for photovoltaics† †Electronic supplementary information (ESI) available: Experimental details, PL, PDS spectra and XRD patterns. See DOI: 10.1039/c4sc03141e Click here for additional data file.

PubMed Central

Hoke, Eric T.; Slotcavage, Daniel J.; Dohner, Emma R.; Bowring, Andrea R.

2015-01-01

We report on reversible, light-induced transformations in (CH3NH3)Pb(BrxI1–x)3. Photoluminescence (PL) spectra of these perovskites develop a new, red-shifted peak at 1.68 eV that grows in intensity under constant, 1-sun illumination in less than a minute. This is accompanied by an increase in sub-bandgap absorption at ∼1.7 eV, indicating the formation of luminescent trap states. Light soaking causes a splitting of X-ray diffraction (XRD) peaks, suggesting segregation into two crystalline phases. Surprisingly, these photo-induced changes are fully reversible; the XRD patterns and the PL and absorption spectra revert to their initial states after the materials are left for a few minutes in the dark. We speculate that photoexcitation may cause halide segregation into iodide-rich minority and bromide-enriched majority domains, the former acting as a recombination center trap. This instability may limit achievable voltages from some mixed-halide perovskite solar cells and could have implications for the photostability of halide perovskites used in optoelectronics. PMID:28706629

Current conduction mechanism and electrical break-down in InN grown on GaN

NASA Astrophysics Data System (ADS)

Kuzmik, J.; Fleury, C.; Adikimenakis, A.; Gregušová, D.; Ťapajna, M.; Dobročka, E.; Haščík, Š.; Kučera, M.; Kúdela, R.; Androulidaki, M.; Pogany, D.; Georgakilas, A.

2017-06-01

Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility (μ) of 1040 cm2/Vs and a free electron concentration (n) of 2.1 × 1018 cm-3 were measured at room temperature with only a limited change down to 20 K, suggesting scattering on dislocations and ionized impurities. Photoluminescence spectra and high-resolution X-ray diffraction correlated with the Hall experiment showing an emission peak at 0.69 eV, a full-width half-maximum of 30 meV, and a dislocation density Ndis ˜ 5.6 × 1010 cm-2. Current-voltage (I-V) characterization was done in a pulsed (10 ns-width) mode on InN resistors prepared by plasma processing and Ohmic contacts evaporation. Resistors with a different channel length ranging from 4 to 15.8 μm obeyed the Ohm law up to an electric field intensity Eknee ˜ 22 kV/cm, when vd ≥ 2.5 × 105 m/s. For higher E, I-V curves were nonlinear and evolved with time. Light emission with a photon energy > 0.7 eV has been observed already at modest Erad of ˜ 8.3 kV/cm and consequently, a trap-assisted interband tunneling was suggested to play a role. At Eknee ˜ 22 kV/cm, we assumed electron emission from traps, with a positive feed-back for the current enhancement. Catastrophic break-down appeared at E ˜ 25 kV/cm. Reduction of Ndis was suggested to fully exploit InN unique prospects for future high-frequency devices.

Measurement of the Positron Annihilation Induced Auger Electron Spectrum from Ag(100)

NASA Astrophysics Data System (ADS)

Joglekar, P.; Shastry, K.; Fazleev, N. G.; Weiss, A. H.

2013-06-01

Research has demonstrated that Positron Annihilation Induced Auger Spectroscopy (PAES) can be used to probe the top-most atomic layer of surfaces and to obtain Auger spectra that are completely free of beam-impact induced secondary background. The high degree of surface selectivity in PAES is a result of the fact that positrons implanted at low energies are trapped with high efficiency at an image-correlation potential well at the surface resulting in almost all of the positrons annihilating with atoms in the top-most layer. Secondary electrons associated with the impact of the incident positrons can be eliminated by a suitable choice of an incident beam energy. In this paper we present the results of measurements of the energy spectrum of electrons emitted as a result of positron annihilation induced Auger electron emission from a clean Ag(100) surface using a series of incident beam energies ranging from 20 eV down to 2 eV. A peak in the spectrum was observed at ~40 eV corresponding to the N2,3VV Auger transition in agreement with previous PAES studies. This peak was accompanied by an even larger low energy tail which persisted even at the lowest beam energies. Our results for Ag(100) are consistent with previous studies of Cu and Au and indicate that a significant fraction of electrons leaving the sample are emitted in the low energy tail and suggest a strong mechanism for energy sharing in the Auger process.

Collaborative Research and Development (CR&D). Task Order 0036: Physical and Chemical Processes of Operating Electronic Devices

DTIC Science & Technology

2006-09-01

actually seen. A. Hierro , … S. A. Ringel et al., Phys. Stat. Sol (b) 228, 937 (2001). Ohio State U. Use DLTS and DLOS (Deep Level Optical Spectroscopy...to threading dislocations. Also see A. Hierro et al., APL 76, 3064 (2000), where traps at EC-ET=0.58-0.62, 1.35, 2.57-2.64, 3.22eV are seen in GaN

Positron Annihilation Induced Auger Electron Spectroscopic Studies Of Reconstructed Semiconductor Surfaces

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Reed, J. A.; Starnes, S. G.; Weiss, A. H.

2011-06-01

The positron annihilation induced Auger spectrum from GaAs(100) displays six As and three Ga Auger peaks below 110 eV corresponding to M4,5VV, M2M4V, M2,3M4,5M4,5 Auger transitions for As and M2,3M4,5M4,5 Auger transitions for Ga. The integrated Auger peak intensities have been used to obtain experimental annihilation probabilities of surface trapped positrons with As 3p and 3d and Ga 3p core level electrons. PAES data is analyzed by performing calculations of positron surface and bulk states and annihilation characteristics of surface trapped positrons with relevant Ga and As core level electrons for both Ga- and As-rich (100) surfaces of GaAs, ideally terminated, non-reconstructed and with (2×8), (2×4), and (4×4) reconstructions. The orientation-dependent variations of the atomic and electron densities associated with reconstructions are found to affect localization of the positron wave function at the surface. Computed positron binding energy, work function, and annihilation characteristics demonstrate their sensitivity both to chemical composition and atomic structure of the topmost layers of the surface. Theoretical annihilation probabilities of surface trapped positrons with As 3d, 3p, and Ga 3p core level electrons are compared with the ones estimated from the measured Auger peak intensities.

Deep level transient spectroscopy (DLTS) on colloidal-synthesized nanocrystal solids.

PubMed

Bozyigit, Deniz; Jakob, Michael; Yarema, Olesya; Wood, Vanessa

2013-04-24

We demonstrate current-based, deep level transient spectroscopy (DLTS) on semiconductor nanocrystal solids to obtain quantitative information on deep-lying trap states, which play an important role in the electronic transport properties of these novel solids and impact optoelectronic device performance. Here, we apply this purely electrical measurement to an ethanedithiol-treated, PbS nanocrystal solid and find a deep trap with an activation energy of 0.40 eV and a density of NT = 1.7 × 10(17) cm(-3). We use these findings to draw and interpret band structure models to gain insight into charge transport in PbS nanocrystal solids and the operation of PbS nanocrystal-based solar cells.

Singlet and triplet excitons and charge polarons in cycloparaphenylenes. A density functional theory study

DOE PAGES

Liu, Jin; Adamska, Lyudmyla; Doorn, Stephen K.; ...

2015-05-14

Conformational structure and the electronic properties of various electronic excitations in cycloparaphenylenes (CPPs) are calculated using hybrid Density Functional Theory (DFT). The results demonstrate that wavefunctions of singlet and triplet excitons as well as the positive and negative polarons remain fully delocalized in CPPs. In contrast, these excitations in larger CPP molecules become localized on several phenyl rings, which are locally planarized, while the undeformed ground state geometry is preserved on the rest of the hoop. As evidenced by the measurements of bond-length alternation and dihedral angles, localized regions show stronger hybridization between neighboring bonds and thus enhanced electronic communication.more » This effect is even more significant in the smaller hoops, where phenyl rings have strong quinoid character in the ground state. Thus, upon excitation, electron–phonon coupling leads to the self-trapping of the electronic wavefunction and release of energy from fractions of an eV up to two eVs, depending on the type of excitation and the size of the hoop. The impact of such localization on electronic and optical properties of CPPs is systematically investigated and compared with the available experimental measurements.« less

Field evaluation of four widely used mosquito traps in Central Europe

PubMed Central

2014-01-01

Background To monitor adult mosquitoes several trapping devices are available. These are differently constructed and use various mechanisms for mosquito attraction, thus resulting in different trapping sensitivities and efficacies for the various species. Mosquito monitoring and surveillance programs in Europe use various types of mosquito traps, but only a few comparisons have been conducted so far. This study compared the performance of four commercial trapping devices, which are commonly used in Europe. Methods Four different traps, Biogents Sentinel trap (BG trap), Heavy Duty Encephalitis Vector Survey trap (EVS trap), Centres for Disease Control miniature light trap (CDC trap) and Mosquito Magnet Patriot Mosquito trap (MM trap) were compared in a 4 × 4 latin square study. In the years 2012 and 2013, more than seventy 24-hour trap comparisons were conducted at ten different locations in northern and southern Germany, representing urban, forest and floodplain biotopes. Results Per 24-hour trapping period, the BG trap caught the widest range of mosquito species, the highest number of individuals of the genus Culex as well as the highest number of individuals of the species Ochlerotatus cantans, Aedes cinereus/geminus, Oc. communis and Culex pipiens/torrentium. The CDC trap revealed best performance for Aedes vexans, whereas the MM trap was most efficient for mosquitoes of the genus Anopheles and the species Oc. geniculatus. The EVS trap did not catch more individuals of any genus or species compared to the other three trapping devices. The BG trap caught the highest number of individuals per trapping period in urban environments as well as in wet forest, while the CDC trap caught the highest number of individuals in the floodplain biotopes. Additionally, the BG trap was most efficient for the number of mosquito species in urban locations. Conclusion The BG trap showed a significantly better or similar performance compared to the CDC, EVS or MM trap with regard to trapping efficacy for most common mosquito species in Germany, including diversity of mosquito species and number of mosquitoes per trapping period. Thus, the BG trap is probably the best solution for general monitoring or surveillance programs of adult mosquitoes in Central Europe. PMID:24924481

The relative attractiveness of carbon dioxide and octenol in CDC- and EVS-type light traps for sampling the mosquitoes Aedes aegypti (L.), Aedes polynesiensis Marks, and Culex quinquefasciatus say in Moorea, French Polynesia.

PubMed

Russell, Richard C

2004-12-01

Two dominant day-biting pests and vector species on the island of Moorea in French Polynesia are Aedes (Stegomyia) aegypti (L.) and Aedes (Stegomyia) polynesiensis Marks, major vectors of dengue viruses and Wuchereria bancrofti, respectively. Their surveillance is hindered by a relative lack of attraction to light traps, necessitating the undesirable use of human bait collections with the inherent risks of pathogen transmission. The effectiveness of CDC- and EVS-type light traps baited with olfactory attractants was evaluated for these two Aedes species and the nocturnal Culex (Culex) quinquefasciatus Say in three sites in urban and semi-rural environments on Moorea in October/November 2003. Firstly, four CDC-type traps with light only, light with octenol, light with carbon dioxide (dry ice), and light with octenol plus carbon dioxide were operated continuously over four days with daily rotation to compensate for position effects. Secondly, two CDC- and two EVS-type traps with carbon dioxide or carbon dioxide plus octenol were operated continuously over four days with similar rotation. Variation was found in the numbers of the three species collected at the different sites, reflecting the relative availability of their preferred larval habitats. With the CDC traps in the first trial, the addition of octenol to the light did not significantly increase the collection of any species, the addition of carbon dioxide did significantly increase collection of all three species, while the addition of octenol to the light plus carbon dioxide did not significantly increase the collections further. In the second trial, there was no significant difference in the mean number of Ae. aegypti or Ae. polynesiensis collected in either EVS or CDC traps when baited with carbon dioxide or with octenol added. For Cx. quinquefasciatus, the supplementation with octenol made no significant difference with EVS traps but resulted in significantly reduced collections in CDC traps. Overall, neither trap, however baited, provided large samples when compared with landing/ biting collections at human bait. Only two other species were collected, Culex (Culex) roseni Belkin and Aedes (Aedimorphus) nocturnus (Theobald), the latter being a first record for the island of Moorea and for French Polynesia.

Laboratory X-ray Studies with Trapped Highly Charged Ions Using Synchrotrons and Free-electron Lasers

NASA Astrophysics Data System (ADS)

Crespo López-Urrutia, José R.

2018-06-01

Laboratory studies on highly charged ions (HCI) using electron beam ion traps (EBITs) can cover all charge states and chemical elements found in astrophysical sources. Since their introduction in 1986, a wealth of emission measurements from the optical to the x-ray range has been carried out by different groups. In most of the work, electron-impact excitation was the driving mechanism, and high resolution spectrometers were used for the diagnostic of the emitted radiation. Other recent studies included x-ray emission following charge exchange, a mechanism which is present in many astrophysical environments and can help explain some of the unknown spectral features at 3.55 keV.In the last decade, excitation and photoionization have also been investigated by exposing HCI trapped in an EBIT to intense, monochromatic radiation from free-electron lasers and synchrotron sources. Here, advanced monochromators in powerful undulator beamlines allowed us to work at photon energies from 50 eV to 15 keV while resolving the natural linewidths of x-ray transitions like the Kα complex of Fe up to the highest charge states, and to measure the oscillator strengths of, e. g., the neonlike Fe16+ spectrum. Photoionization studies have been performed for those species as well. Very recently, our novel compact EBIT with an off-axis electron gun allows for simultaneously using the photon beam downstream, enabling exact wavelength determinations referenced to HCI with accurately calculable transitions. We have performed a recalibration of the molecular and atomic oxygen soft x-ray absorption lines in the 500 eV range with an uncertainty estimate of 30 meV. This revealed a 600 meV calibration error that propagated through the literature for decades with the consequence of a 200 km/s misfit of the velocity in interstellar oxygen absorbers. Other possibilities for the compact EBIT are investigations of resonant photorecombination processes with excellent energy resolution. With the miniaturization of EBITs, laboratory astrophysics in the spectral domain of Chandra, XMM-Newton and the future Athena mission will be extremely simplified, enabling atomic and plasma physics studies and much-improved instrumental calibrations.

Logarithmic detrapping response for holes injected into SiO2 and the influence of thermal activation and electric fields

NASA Astrophysics Data System (ADS)

Lakshmanna, V.; Vengurlekar, A. S.

1988-05-01

Relaxation of trapped holes that are introduced into silicon dioxide from silicon by the avalanche injection method is studied under various conditions of thermal activation and external electric fields. It is found that the flat band voltage recovery in time follows a universal behavior in that the response at high temperatures is a time scaled extension of the response at low temperatures. Similar universality exists in the detrapping response at different external bias fields. The recovery characteristics show a logarithmic time dependence in the time regime studied (up to 6000 s). We find that the recovery is thermally activated with the activation energy varying from 0.5 eV for a field of 2 MV/cm to 1.0 eV for a field of -1 MV/cm. There is little discharge in 3000 s at room temperature for negative fields beyond -4 MV/cm. The results suggest that the recovery is due to tunneling of electrons in the silicon conduction band into the oxide either to compensate or to remove the charge of trapped holes.

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang; Haas, Simon; Pernstich, Kurt; Mathis, Thomas; Batlogg, Bertram

2010-03-01

Our study shows that it is possible to reach one of the ultimate goals of organic electronics: organic field-effect transistors can be produced with trap densities as low as in the bulk of single crystals. Several analytical methods to calculate the spectral density of localized states in the band gap (trap DOS) from measured data were used to clarify, if the different methods lead to similar results. We then compared quantitatively trap DOS information from the literature, correcting for differences due to different calculation methods. In the bulk of single crystals the trap DOS is lower by several orders of magnitude than in thin films. The compilation of all data strongly suggests that structural defects at grain boundaries are the main cause of ``fast'' traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric. We will discuss to what degree band broadening due to the thermal fluctuations of the intermolecular transfer integral is reflected in the trap DOS very close (<0.15 eV) to the mobility edge.

Probing defects in ZnO nanostructures by Photoluminescence and Positron Annihilation Spectroscopy

NASA Astrophysics Data System (ADS)

Ghosh, Manoranjan; Raychaudhuri, A. K.; Chaudhuri, S. K.; Das, Dipankar

2008-03-01

We have investigated defect related emission in the blue green region (2.2 eV -- 2.5 eV) of ZnO nanostructures having spherical (5 nm-15 nm) as well as those with hexagonal platelet and rod like morphologies (20nm-100 nm), synthesized by solvo-thermal route. This emission show anomalous size dependence. Emission energy near 2.2 eV, shifts to higher energy (2.5 eV) for increase in size beyond 20nm when shape of the nanostructures changes. This change in photoluminescence has a close correlation with the size (and shape) induced change in the positron trapping rate which is directly proportional to the defect concentration. The trapping rates show non-monotonous dependence on size. It increases initially as the size increases (5nm-15nm) and then decreases as the size increases beyond 20nm. While increase of the trapping rate on size reduction is expected due to accumulation of more defects at the surface, the initial dependence of the trapping rate on the size (below 20nm) is anomalous. The data are explained by the presence of defects like Zn vacancy and confinement due to size reduction.

Effects of hydrogen implantation into GaN

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Abernathy, C. R.; Wilson, R. G.; Zavada, J. M.; Song, C. Y.; Weinstein, M. G.; Stavola, M.; Han, J.; Shul, R. J.

1999-01-01

Proton implantation in GaN is found to reduce the free carrier density through two mechanisms - first, by creating electron and hole traps at around EC - 0.8 eV and EV + 0.9 eV that lead to compensation in both n- and p-type material, and second, by leading to formation of (AH)° complexes, where A is any acceptor (Mg, Ca, Zn, Be, Cd). The former mechanism is useful in creating high resistivity regions for device isolation, whereas the latter produces unintentional acceptor passivation that is detrimental to device performance. The strong affinity of hydrogen for acceptors leads to markedly different redistribution behavior for implanted H + in n- and p-GaN due to the chemical reaction to form neutral complexes in the latter. The acceptors may be reactivated by simple annealing at ⩾600°C, or by electron injection at 25-150°C that produces debonding of the (AH)° centers. Implanted hydrogen is also strongly attracted to regions of strain in heterostructure samples during annealing, leading to pile-up at epi-epi and epi-substrate interfaces. IR spectroscopy shows that implanted hydrogen also decorates VGa defects in undoped and n-GaN.

STUDY OF THE UPPER ATMOSPHERE BY MEANS OF THE COSMOS 3 AND COSMOS 5 SATELLITES. 2. SOFT PARTICLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krasovskii, V.I.; Gal'perin, Yu.I.; Dzhordzhio, N.V.

1963-01-01

Geoactive particle research was conducted during the Cosmos 3 and Cosmos 5 orbital flights. The existence of currents of electrons and positive ions in the upper ionosphere having energies that are relatively low but greater than thermal is postulated. This was concluded from fluxes detected by the two types of particle counters used. a sensor formed of a fluorescent screen and photomultiplier, which was biased negatively and also shielded with Al foil so as to register only electrons above 40 ev and positive ions whose free path exceeded the foil thickness (e.g., protons of the order of 200 kev), andmore » an ion trap which registered electrons of 5 kev or more and positive ions. The trap counters showed repeated instances of anisotropic positive ion flow in a direction normal to the geomagnetic force lines; the fact that no simultaneous indications appeared in the indicator screen type counters suggests that these were soft'' positive ions; if protons, their energy would be less than 200 kev. This conclusion is supported by the fact that when the satellite had turned 180 deg the indicator counters in turn registered particles not sensed by the ion traps, which were evidently electrons below 5 kev. lt was concluded that there are areas which exhibit local current flow, in which positive ion energies are estimated to be several dozen ev and average density is 10/sup 8/ ion/cm/sup 2//sec/ster. These areas are in the 200- to 600-km region and tend to remain at the same earth latitudes for prolonged periods, sometimes as much as 9 hours. Additional observations were made of some highenergy particles, particularly those registered in the South Atlantic geomagnetic anomaly. It was concluded that these particles were electrons, estimated at between 50 kev and 1 Mev and at an omnidirectional density of 5 x 10/sup 7//cm/sup 2//sec. The possibility of spurious effects caused by the fields of on-board transmitting antennas, principally that of the telemetry transmitter, was rejected since no difference in electron count was noted whether the transmitters were on or off. The intensity and anisotropy of recorded electron currents agreed with earlier data from the 1958 Sputnik and from the U. S. Injun'' rocket of 1961. (AID)« less

Optoelectronically probing the density of nanowire surface trap states to the single state limit

NASA Astrophysics Data System (ADS)

Dan, Yaping

2015-02-01

Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

Formation of a high intensity low energy positron string

NASA Astrophysics Data System (ADS)

Donets, E. D.; Donets, E. E.; Syresin, E. M.; Itahashi, T.; Dubinov, A. E.

2004-05-01

The possibility of a high intensity low energy positron beam production is discussed. The proposed Positron String Trap (PST) is based on the principles and technology of the Electron String Ion Source (ESIS) developed in JINR during the last decade. A linear version of ESIS has been used successfully for the production of intense highly charged ion beams of various elements. Now the Tubular Electron String Ion Source (TESIS) concept is under study and this opens really new promising possibilities in physics and technology. In this report, we discuss the application of the tubular-type trap for the storage of positrons cooled to the cryogenic temperatures of 0.05 meV. It is intended that the positron flux at the energy of 1-5 eV, produced by the external source, is injected into the Tubular Positron Trap which has a similar construction as the TESIS. Then the low energy positrons are captured in the PST Penning trap and are cooled down because of their synchrotron radiation in the strong (5-10 T) applied magnetic field. It is expected that the proposed PST should permit storing and cooling to cryogenic temperature of up to 5×109 positrons. The accumulated cooled positrons can be used further for various physics applications, for example, antihydrogen production.

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

Glow plasma trigger for electron cyclotron resonance ion sources.

PubMed

Vodopianov, A V; Golubev, S V; Izotov, I V; Nikolaev, A G; Oks, E M; Savkin, K P; Yushkov, G Yu

2010-02-01

Electron cyclotron resonance ion sources (ECRISs) are particularly useful for nuclear, atomic, and high energy physics, as unique high current generators of multicharged ion beams. Plasmas of gas discharges in an open magnetic trap heated by pulsed (100 micros and longer) high power (100 kW and higher) high-frequency (greater than 37.5 GHz) microwaves of gyrotrons is promising in the field of research in the development of electron cyclotron resonance sources for high charge state ion beams. Reaching high ion charge states requires a decrease in gas pressure in the magnetic trap, but this method leads to increases in time, in which the microwave discharge develops. The gas breakdown and microwave discharge duration becomes greater than or equal to the microwave pulse duration when the pressure is decreased. This makes reaching the critical plasma density initiate an electron cyclotron resonance (ECR) discharge during pulse of microwave gyrotron radiation with gas pressure lower than a certain threshold. In order to reduce losses of microwave power, it is necessary to shorten the time of development of the ECR discharge. For fast triggering of ECR discharge under low pressure in an ECRIS, we initially propose to fill the magnetic trap with the plasmas of auxiliary pulsed discharges in crossed ExB fields. The glow plasma trigger of ECR based on a Penning or magnetron discharge has made it possible not only to fill the trap with plasma with density of 10(12) cm(-3), required for a rapid increase in plasma density and finally for ECR discharge ignition, but also to initially heat the plasma electrons to T(e) approximately = 20 eV.

Photoluminescence and thermoluminescence properties of BaGa2O4

NASA Astrophysics Data System (ADS)

Noto, L. L.; Poelman, D.; Orante-Barrón, V. R.; Swart, H. C.; Mathevula, L. E.; Nyenge, R.; Chithambo, M.; Mothudi, B. M.; Dhlamini, M. S.

2018-04-01

Rare-Earth free luminescent materials are fast becoming important as the cost of rare earth ions gradually increases. In this work, a Rare-Earth free BaGa2O4 luminescent compound was prepared by solid state chemical reaction, which was confirmed to have a single phase by X-ray Diffraction. The Backscattered Electron image and Energy Dispersive X-ray spectroscopy maps confirmed irregular particle and homogeneous compound formation, respectively. The Photoluminescence spectrum displayed broad emission between 350 to 650 nm, which was deconvoluted into two components. The photoluminescence excitation peak was positioned at 254 nm, which corresponds with the band-to-band position observed from the diffuse reflectance spectrum. The band gap was extrapolated to 4.65 ± 0.02 eV using the Kubelka-Munk model. The preliminary thermoluminescence results indicated that the kinetics involved were neither of first nor second order. Additionally, the activation energy of the electrons within the trap centres was approximated to 0.61 ± 0.01 eV using the Initial Rise model.

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE PAGES

Gul, R.; Roy, U. N.; Camarda, G. S.; ...

2017-03-28

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, R.; Roy, U. N.; Camarda, G. S.

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

Direct Measurement of the Mass Difference of 163Ho and 163Dy Solves the Q -Value Puzzle for the Neutrino Mass Determination

NASA Astrophysics Data System (ADS)

Eliseev, S.; Blaum, K.; Block, M.; Chenmarev, S.; Dorrer, H.; Düllmann, Ch. E.; Enss, C.; Filianin, P. E.; Gastaldo, L.; Goncharov, M.; Köster, U.; Lautenschläger, F.; Novikov, Yu. N.; Rischka, A.; Schüssler, R. X.; Schweikhard, L.; Türler, A.

2015-08-01

The atomic mass difference of 163 and 163Dy has been directly measured with the Penning-trap mass spectrometer SHIPTRAP applying the novel phase-imaging ion-cyclotron-resonance technique. Our measurement has solved the long-standing problem of large discrepancies in the Q value of the electron capture in 163Ho determined by different techniques. Our measured mass difference shifts the current Q value of 2555(16) eV evaluated in the Atomic Mass Evaluation 2012 [G. Audi et al., Chin. Phys. C 36, 1157 (2012)] by more than 7 σ to 2833 (30stat)(15sys) eV /c2 . With the new mass difference it will be possible, e.g., to reach in the first phase of the ECHo experiment a statistical sensitivity to the neutrino mass below 10 eV, which will reduce its present upper limit by more than an order of magnitude.

High-resolution grazing-incidence grating spectrometer for temperature measurements of low-Z ions emitting in the 100-300 Å spectral banda)

NASA Astrophysics Data System (ADS)

Widmann, K.; Beiersdorfer, P.; Magee, E. W.; Boyle, D. P.; Kaita, R.; Majeski, R.

2014-11-01

We have constructed a high-resolution grazing-incidence spectrometer designed for measuring the ion temperature of low-Z elements, such as Li+ or Li2 +, which radiate near 199 Å and 135 Å, respectively. Based on measurements at the Livermore Electron Beam Ion Trap we have shown that the instrumental resolution is better than 48 mÅ at the 200 Å setting and better than 40 mÅ for the 135-Å range. Such a high spectral resolution corresponds to an instrumental limit for line-width based temperature measurements of about 45 eV for the 199 Å Li+ and 65 eV for the 135 Å Li2 + lines. Recently obtained survey spectra from the Lithium Tokamak Experiment at the Princeton Plasma Physics Laboratory show the presence of these lithium emission lines and the expected core ion temperature of approximately 70 eV is sufficiently high to demonstrate the feasibility of utilizing our high-resolution spectrometer as an ion-temperature diagnostic.

Defect generation in silicon dioxide from synchrotron radiation below 41 eV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, C. K.; Reisman, A.; Bhattacharya, P.

1989-07-01

Generation of fixed positive charge, neutral electron traps, and fixednegative charge in SiO/sub 2/ due to exposure to x radiation in the photon energyrange below 41 eV from a synchrotron source is reported. For constant incidentx-radiation exposure levels of 120 mJ/cm/sup 2/ with both monochromatic andbroadband radiation, the number of defects generated in the monitoring deviceswas at or below the detection limit of the equipment. This is in sharp contrastwith the results obtained at photon energies above 300 eV reported earlier (C.K. Williams, A. Reisman, P. K. Bhattacharya, and W. Ng, J. Appl. Phys./bold 64/, 1145 (1988)) in which amore » large number of each of the three defectsmentioned above were generated. The lack of damage indicates that the problemsassociated with x-ray-induced insulator damage due to x-ray lithography may besolved by tailoring the photon energy, provided suitable mask and photoresistmaterials can be developed.« less

First-principles study of defects in TlBr

NASA Astrophysics Data System (ADS)

Du, Mao-Hua

2010-03-01

TlBr is a promising radiation detection material due to its high gamma-ray stopping efficiency, high resistivity (that reduces dark current and noise), large enough band gap of 2.68 eV (suitable for room temperature applications), and long electron carrier lifetime (for efficient collection of the radiation-generated carriers). The defect properties obtained from density functional calculations will be presented to discuss their roles in carrier trapping and recombination (which affects the carrier lifetime) and carrier compensation (which affects the resistivity).

Probing the defect nanostructure of helium and proton tracks in LiF:Mg,Ti using optical absorption: Implications to track structure theory calculations of heavy charged particle relative efficiency

NASA Astrophysics Data System (ADS)

Eliyahu, I.; Horowitz, Y. S.; Oster, L.; Weissman, L.; Kreisel, A.; Girshevitz, O.; Marino, S.; Druzhyna, S.; Biderman, S.; Mardor, I.

2015-04-01

A major objective of track structure theory (TST) is the calculation of heavy charged particle (HCP) induced effects. Previous calculations have been based exclusively on the radiation action/dose response of the released secondary electrons during the HCP slowing down. The validity of this presumption is investigated herein using optical absorption (OA) measurements on LiF:Mg,Ti (TLD-100) samples following irradiation with 1.4 MeV protons and 4 MeV He ions at levels of fluence from 1010 cm-2 to 2 × 1014 cm-2. The major bands in the OA spectrum are the 5.08 eV (F band), 4.77 eV, 5.45 eV and the 4.0 eV band (associated with the trapping structure leading to composite peak 5 in the thermoluminescence (TL) glow curve). The maximum intensity of composite peak 5 occurs at a temperature of ∼200 °C in the glow curve and is the glow peak used for most dosimetric applications. The TST calculations use experimentally measured OA dose response following low ionization density (LID) 60Co photon irradiation over the dose-range 10-105 Gy for the simulation of the radiation action of the HCP induced secondary electron spectrum. Following proton and He irradiation the saturation levels of concentration for the F band and the 4.77 eV band are approximately one order of magnitude greater than following LID irradiation indicating enhanced HCP creation of the relevant defects. Relative HCP OA efficiencies, ηHCP, are calculated by TST and are compared with experimentally measured values, ηm, at levels of fluence from 1010 cm-2 to 1011 cm-2 where the response is linear due to negligible track overlap. For the F band, values of ηm/ηHCP = 2.0 and 2.6 for the He ions and protons respectively arise from the neglect of enhanced Fluorine vacancy/F center creation by the HCPs in the TST calculations. It is demonstrated that kinetic analysis simulating LID F band dose response with enhanced Fluorine vacancy creation, and incorporated into the TST calculation, can lead to values of ηm = ηHCP. On the other hand, the values of ηm/ηHCP for the 4.0 eV band are much less than unity at 0.18 for the protons and <0.12 for the He ions. These very low values suggest that the 4.0 eV trapping structure is either destroyed or de-populated, perhaps by local heating/thermal spike/Coulomb explosion, during the HCP slowing down. These HCP induced processes are believed to be absent or greatly reduced during LID irradiation. The large deviations of ηm/ηHCP from unity for both the F band and especially the 4.0 eV band demonstrate that conventional TST which attempts to predict HCP induced radiation effects from the exclusive action of the released secondary electrons is woefully inadequate.

Plasma observations at the Earth's magnetic equator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olsen, R.C.; Shawhan, S.D.; Gallagher, D.L.

1987-03-01

The magnetic equator provides a unique location for thermal plasma and plasma wave measurements. Plasma populations are found to be confined within a few degrees latitude of the equator, particularly the ions. The equatorially trapped ion population is found to be primarily hydrogen, and the authors find little evidence for preferential heating of heavier ions. Helium is occasionally found to be heated along with the protons, and forms about 10% of the equatorially trapped populations at such times, similar to the percentage of He{sup +} in the cold, core plasma of the plasmasphere. One case of a heated O{sup +}more » component was found; at the 0.1% level it generally comprises in the outer plasmasphere core plasma. The heated H{sup +} ions can be characterized by a bi-Maxwellian with kT{sub {parallel}} = 0.5-1.0 eV, and kT = 5-50 eV, with a density of 10-100 cm{sup {minus}3}. The total plasma density, as inferred from the plasma wave instrument measurements of the upper hybrid measurements of the upper hybrid resonance (UHR), is relatively constant with latitude, occasionally showing a local minimum at the magnetic equator, even though the ion flux has increased substantially. The first measurements of the equatorially trapped plasma and coincident UHR measurements show that the trapped plasma is a feature of the plasmapause region, found at total plasma densities of 20-200 cm{sup {minus}3}. The warm, trapped plasma is found in conjunction with equatorial noise, a plasma wave feature found at frequencies near 100 Hz, with a broad spectrum generally found between the proton gyrofrequency at the low frequency edge and the geometric mean gyrofrequency at the high frequency edge. This latter frequency is generally the lower hybrid resonance (LHR) for a proton-electron plasma. Sharp spatial boundaries are occasionally found with latitude, delimiting the equatorially trapped plasma.« less

Interactions of hydrogen with amorphous hafnium oxide

NASA Astrophysics Data System (ADS)

Kaviani, Moloud; Afanas'ev, Valeri V.; Shluger, Alexander L.

2017-02-01

We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a -HfO2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and -1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a -HfO2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016)., 10.1103/PhysRevB.94.020103] forming a [etr -+O -H ] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a -HfO2 and the electrical behavior of amorphous hafnia films in CMOS devices.

Universal main magnetic focus ion source for production of highly charged ions

NASA Astrophysics Data System (ADS)

Ovsyannikov, V. P.; Nefiodov, A. V.; Levin, A. A.

2017-10-01

A novel room-temperature compact ion source has been developed for the efficient production of atomic ions by means of an electron beam with energy Ee and current density je controllable within wide ranges (100 eV ≲Ee ≲ 60 keV, 10 A/cm2 ≲je ≲ 20 kA/cm2). In the first experiments, the X-ray emission of Ir64+ ions has been measured. Based on a combination of two different techniques, the device can operate both as conventional Electron Beam Ion Source/Trap and novel Main Magnetic Focus Ion Source. The tunable electron-optical system allows for realizing laminar and turbulent electron flows in a single experimental setup. The device is intended primarily for fundamental and applied research at standard university laboratories.

Deep level transient spectroscopy signatures of majority traps in GaN p-n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

NASA Astrophysics Data System (ADS)

PŁaczek-Popko, E.; Trzmiel, J.; Zielony, E.; Grzanka, S.; Czernecki, R.; Suski, T.

2009-12-01

In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequently Mg-doped GaN layers were grown. To perform DLTS measurements Ni/Au contacts to p-type material and Ti/Au contacts to n-type material were processed. DLTS signal spectra revealed the presence of two majority traps of activation energies obtained from Arrhenius plots equal to E1=0.22 eV and E2=0.65 eV. In present work we show that the trap E1 is linked with the extended defects whereas the trap E2 is the point defect related. Its capture cross section is thermally activated with energy barrier for capture equal to 0.2 eV.

Energetic (above 60 eV) atmospheric photoelectrons

NASA Technical Reports Server (NTRS)

Winningham, J. D.; Decker, D. T.; Kozyra, J. U.; Nagy, A. F.; Jasperse, J. R.

1989-01-01

Data from low altitude plasma instrument (LAPI) on Dynamics Explorer 2 document a population of high-energy (up to 800 eV) atmospheric photoelectrons that has not been reported in the published literature. The source of these photoelectrons is postulated to be the soft X-ray portion of the whole sun spectrum. This conclusion is supported by sunrise-sunset characteristics that track those of the classical (below 60 eV) EUV-produced photoelectrons, and theoretical results from two models that incorporate the soft X-ray portion of the solar spectrum. The models include K-shell ionization effects and predict peaks in the photoelectron spectrum due to Auger electrons emitted from oxygen and nitrogen. The peak for nitrogen is observed as predicted, but the peak for oxygen is barely observable. Excellent quantitative agreement is achieved between theory and experiment by using reasonable adjustments to the few published soft X-ray spectra based on solar activity. The upflowing energetic photoelectrons provide a heretofore unknown source of electrons to the magnetosphere. They occur whenever and wherever the sun is up, that is, at all invariant latitudes. Their density is low, but they are steady and ubiquitous. If scattering and trapping occur on closed field lines, then photoelectrons could contribute as a significant particle source and thus represent a new facet of magnetosphere-ionosphere coupling.

PAES study of the positron thermal desorption from a Ge(100) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soininen, E.; Schwab, A.; Lynn, K.G.

1991-02-01

Positron induced Auger electron spectroscopy (PAES) from a clean Ge(100) surface was studied as a function of temperature. Three low-energy Auger peaks were detected at 50 eV, 90 eV and 100--150 eV, attributed to M{sub 2,3}M{sub 4}M{sub 4}, M{sub 2,3}M{sub 4}V and M{sub 1}M{sub 4}M{sub 4} Auger transitions, respectively. An estimated 4({plus minus}1)% of the surface trapped positrons annihilate with Ge 3p level electrons. The PAES yield from a Ge(100) surface is reduced at elevated temperatures, in accordance with an activation process found earlier in several Ps fraction experiments. A desorption model adopted from these studies does not accurately describemore » the PAES intensity at higher temperatures ({gt}500 {degree}C), which levels off at 5% of the room temperature value. Possible sources for the discrepancy are discussed. On a Ge(100) surface, an upper limit for the Ps emission near the melting point is 97%. The error in calibration parameters due to the earlier assumption of 100% Ps emission from Ge surfaces seems to induce only small errors to the Ps fraction measurements.« less

Long persistent phosphorescence of V3+ centers in MgAl2O4:Ce3+

NASA Astrophysics Data System (ADS)

Jia, Dongdong; William, Yen

2002-03-01

: Ceramic samples of Ce3+ doped and undoped MgAl2O4 have been prepared and studied. Long persistent phosphorescence was observed at 520nm in Ce3+ doped sample. The persistence time of the 520nm afterglow is longer than 10 hours. The long persistent 520nm afterglow is due to the V3+ centers in MgAl2O4. The V3+ emission is coming from a recombination of the electron from conduction band and the hole of the V3+ center. The hole level of the V3+ center is about 2.4eV below the conduction band. Thermoluminescence spectra of the two samples have been studied. There two hole traps in the MgAl2O4 are found at 41 and 238oC . Doping of Ce3+ also produces two F center like electron traps at 14 and 131oC. Doping of Ce3+ greatly enhanced the afterglow emission of the V3+ center.

Excess electron is trapped in a large single molecular cage C60F60.

PubMed

Wang, Yin-Feng; Li, Zhi-Ru; Wu, Di; Sun, Chia-Chung; Gu, Feng-Long

2010-01-15

A new kind of solvated electron systems, sphere-shaped e(-)@C60F60 (I(h)) and capsule-shaped e(-)@C60F60 (D6h), in contrast to the endohedral complex M@C60, is represented at the B3LYP/6-31G(d) + dBF (diffusive basis functions) density functional theory. It is proven, by examining the singly occupied molecular orbital (SOMO) and the spin density map of e(-)@C60F60, that the excess electron is indeed encapsulated inside the C60F60 cage. The shape of the electron cloud in SOMO matches with the shape of C60F60 cage. These cage-like single molecular solvated electrons have considerably large vertical electron detachment energies VDE of 4.95 (I(h)) and 4.67 eV (D6h) at B3LYP/6-31+G(3df) + dBF level compared to the VDE of 3.2 eV for an electron in bulk water (Coe et al., Int Rev Phys Chem 2001, 20, 33) and that of 3.66 eV for e(-)@C20F20 (Irikura, J Phys Chem A 2008, 112, 983), which shows their higher stability. The VDE of the sphere-shaped e(-)@C60F60 (I(h)) is greater than that of the capsule-shaped e(-)@C60F60 (D6h), indicating that the excess electron prefers to reside in the cage with the higher symmetry to form the more stable solvated electron. It is also noticed that the cage size [7.994 (I(h)), 5.714 and 9.978 A (D6h) in diameter] is much larger than that (2.826 A) of (H2O)20- dodecahedral cluster (Khan, Chem Phys Lett 2005, 401, 85). Copyright 2009 Wiley Periodicals, Inc.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madanian, H.; Cravens, T. E.; Burch, J.

The plasma environment near comet 67P/Churyumov–Gerasimenko (67P/CG) is dynamically affected by various factors, including the incident solar wind and outgassing from the nucleus. The Rosetta spacecraft MAGnetometer (MAG) instrument observations near perihelion showed crossing events into a magnetic field-free region at about 170 km from the nucleus in 2015 July at 1.26 au from the Sun. At each crossing, the magnitude of the magnetic field dropped by more than 20 nT to near zero. We compared the Ion and Electron Sensor (IES) electron differential flux energy spectrum inside and outside the crossing boundaries. The IES observations show a modest butmore » consistent drop in electron flux for energies between 40 eV and a few hundred eV at each cavity crossing event. This drop in the electron spectra might be due to the absence or attenuation of solar wind electrons inside the observed diamagnetic regions, which might or might not be a diamagnetic cavity. There is no apparent simple linear correlation between the electron count rate measured by the IES at different energies and the magnitude of the magnetic field, however; at all energies, the highest electron count rates are recorded at the highest magnetic field magnitudes. From model-data comparisons it seems that inside diamagnetic regions, pure coma photoelectrons are not sufficient to explain the observations and that a trapping mechanism and/or infused solar wind electrons are necessary to explain the observed electron fluxes.« less

Axions and SN 1987A: Axion trapping

NASA Technical Reports Server (NTRS)

Burrows, Adam; Ressell, M. Ted; Turner, Michael S.

1990-01-01

If an axion of mass between about 10(exp -3) and 10 eV exists, axion emission would have significantly affected the cooling of the nascent neutron star associated with SN 1987A. For an axion of mass greater than about 10(exp -2) eV axions would, like neutrinos, have a mean-free path that is smaller than the size of a neutron star, and thus would become trapped and radiated from an axion sphere. The trapping regime is treated by using numerical models of the initial cooling of a hot neutron star that incorporate a diffusion approximation for axion-energy transport. The axion opacity due to inverse nucleon-nucleon, axion bremsstrahlung is computed; and then the numerical models are used to calculate the integrated axion luminosity, the temperature of the axion sphere, and the effect of axion emission on the neutrino bursts detected by the Kamiokande II (KII) and Irvine-Michigan-Brookhaven (IMB) water-Cherenkov detectors. The larger the axion mass, the stronger the trapping and the smaller the axion luminosity. The estimate of the axion mass is confirmed above which trapping is so strong that axion emission does not significantly affect the neutrino burst. Based upon the neutrino-burst duration - the most sensitive barometer of axion cooling - it is concluded that for an axion mass greater than about 3 eV axion emission would not have had a significant effect on the neutrino bursts detected by KII and IMB. It is strongly suggested that an axion with mass in the interval 10(exp -3) to 3 eV is excluded by the observation of neutrinos from SN 1987A.

Trap characterization by photo-transferred thermoluminescence in MgO nanoparticles

NASA Astrophysics Data System (ADS)

Isik, M.; Gasanly, N. M.

2018-05-01

Shallow trapping centers in MgO nanoparticles were characterized using photo-transferred thermoluminescence (TL) measurements. Experiments were carried out in low temperature range of 10-280 K with constant heating rate. Shallow traps were filled with charge carriers firstly by irradiating the sample at room temperature using S90/Y90 source and then illuminating at 10 K using blue LED. TL glow curve exhibited one peak around 150 K. Curve fitting analyses showed that this peak is composed of two individual peaks with maximum temperatures of 149.0 and 155.3 K. The activation energies of corresponding trapping centers were revealed as 0.70 and 0.91 eV. The dominant mechanism for TL process was found as second order kinetics which represent that fast retrapping is effective transitions taking place within the band gap. Structural characterization of MgO nanoparticles were investigated using x-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. Analyses of experimental observations indicated that MgO nanoparticles show good crystallinity with particle size in nanometer scale.

Proton trapping in SiO 2 layers thermally grown on Si and SiC

NASA Astrophysics Data System (ADS)

Afanas'ev, V. V.; Ciobanu, F.; Pensl, G.; Stesmans, A.

2002-11-01

Positive charging of thermal SiO 2 layers on (1 0 0)Si and (0 0 0 1)6H-, 4H-SiC related to trapping of protons is studied using low-energy proton implantation into the oxide, and compared to the trapping of holes generated by 10-eV photons. Proton trapping has an initial probability close to 100% and shows little sensitivity to the annealing-induced oxygen deficiency of SiO 2. In contrast to protons, hole trapping in as-grown SiO 2 shows a much lower efficiency which increases upon oxide annealing, in qualitative correlation with the higher density of O 3Si• defects (E' centers) detected by electron spin resonance after hole injection. Despite these differences, the neutralization of positive charges induced by holes and protons has the same cross-section, and in both cases is accompanied by liberation of atomic H suggesting that protons account for positive charge in both cases. The rupture of Si-O bonds in the oxide observed upon proton injection suggests, as a first basic step, the bonding of a proton to a bridging oxygen atom in SiO 2 network.

Significant initial results from the environmental measurements experiment on ATS-6

NASA Technical Reports Server (NTRS)

Fritz, T. A.; Arthur, C. W.; Blake, J. B.; Coleman, P. J., Jr.; Corrigan, J. P.; Cummings, W. D.; Deforest, S. E.; Erickson, K. N.; Konradi, A.; Lennartsson, W.

1977-01-01

The Applications Technology Satellite (ATS-6), launched into synchronous orbit on 30 May 1974, carried a set of six particle detectors and a triaxial fluxgate magnetometer. The particle detectors were able to determine the ion and electron distribution functions from 1 to greater than 10 to the 8th power eV. It was found that the magnetic field is weaker and more tilted than predicted by models which neglect internal plasma and that there is a seasonal dependence to the magnitude and tilt. ATS-6 magnetic field measurements showed the effects of field-aligned currents associated with substorms, and large fluxes of field-aligned particles were observed with the particle detectors. Encounters with the plasmasphere revealed the existence of warm plasma with temperatures up to 30 eV. A variety of correlated waves in both the particles and fields were observed: pulsation continuous oscillations, seen predominantly in the plasmasphere bulge; ultralow frequency (ULF) standing waves; ring current proton ULF waves; and low frequency waves that modulate the energetic electrons. In additon, large scale waves on the energetic-ion-trapping boundary were observed, and the intensity of energetic electrons was modulated in association with the passage of sector boundaries of the interplanetary magnetic field.

Investigation of the Contribution of Lower Charger State Ar Ions to the Unknown Faint X-Ray Feature Found in the Stacked Spectrum of Galaxy Clusters

NASA Astrophysics Data System (ADS)

Gall, Amy

Driven by the recent detection of an unidentified emission line previously reported at 3.55-3.57 keV in a stacked spectrum of galaxy clusters, in this work we investigated the resonant dielectronic recombination (DR) process in Li-like Ar as a possible source of, or contributor to, the emission line. The Li-like transition 1s22l-1s2l3l' was suggested to produce a 3.62 keV photon [1] near the unidentified line at 3.57 keV and was the primary focus of our study. The Electron Beam Ion Trap at NIST was used to produce and trap the highly-charged ions of argon. The energy of the quasi-monoenergetic electron beam was incremented in steps of 15 eV to scan over all of the Li-like Ar DR resonances. A Johann-type crystal spectrometer and a solid-state germanium detector were used to take x-ray measurements perpendicular to the electron beam. Our broadband results allowed us to identify the processes that produced specific spectral features, while our high-resolution spectra allowed the experimental separation of features that are less than 2 eV apart. We have used the collisional radiative model NOMAD [2] aided by atomic data calculations by FAC [3] to interpret our observations and account for corrections. Experimental results were compared to the atomic database AtomDB, used to fit the galaxy cluster spectra. We found a number of measured features due to DR in lower charge state Ar ions not included in the database, close in energy to the identified line at 3.57 keV, and suggest their inclusion for improved interpretation and diagnosis of other astrophysical spectra.

Electrical characterization of plasma-grown oxides on gallium arsenide

NASA Technical Reports Server (NTRS)

Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

1985-01-01

Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

Positron-induced Auger-electron study of the Ge(100) surface: Positron thermal desorption and surface condition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soininen, E.; Schwab, A.; Lynn, K.G.

1991-05-01

Positron-annihilation-induced Auger-electron spectroscopy (PAES) was used to study the effects of oxygen, residual gases, and temperature on a Ge(100) surface. Three low-energy Auger peaks were detected at 50, 90, and 100--150 eV, attributed to {ital M}{sub 2,3}{ital M4}{ital M4}, {ital M}{sub 2,3}{ital M4}{ital V}, and {ital M}{sub 1}{ital M4}{ital M4} Auger transitions, respectively. An estimated (4{plus minus}1)% of the surface-trapped positrons annihilate with Ge 3{ital p}--level electrons. The sensitivity of PAES to the surface condition is demonstrated. The PAES yield from a Ge(100) surface is reduced at elevated temperatures, in accord with an activation process earlier found in several positroniummore » (Ps) -fraction experiments. A desorption model adopted from these studies does not describe accurately the PAES results at higher temperatures ({gt}500 {degree}C), where the PAES intensity levels off to 5% of the room-temperature value. Possible sources for the discrepancy are discussed and models for positron trapping to deep surface traps are introduced. On the Ge(100) surface, an upper limit for Ps emission near the melting point is 97%. The error in calibration parameters due to the earlier assumption of 100% Ps emission seems to introduce only small errors into the Ps-fraction measurements.« less

Spectroscopic investigation of oxygen- and water-induced electron trapping and charge transport instabilities in n-type polymer semiconductors.

PubMed

Di Pietro, Riccardo; Fazzi, Daniele; Kehoe, Tom B; Sirringhaus, Henning

2012-09-12

We present an optical spectroscopy study on the role of oxygen and water in electron trapping and storage/bias-stress degradation of n-type polymer field-effect transistors based on one of the most widely studied electron transporting conjugated polymers, poly{[N,N9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bisthiophene)} (P(NDI2OD-T2)). We combine results obtained from charge accumulation spectroscopy, which allow optical quantification of the concentration of mobile and trapped charges in the polymer film, with electrical characterization of P(NDI2OD-T2) organic field-effect transistors to study the mechanism for storage and bias-stress degradation upon exposure to dry air/oxygen and humid nitrogen/water environments, thus separating the effect of the two molecules and determining the nature of their interaction with the polymer. We find that the stability upon oxygen exposure is limited by an interaction between the neutral polymer and molecular oxygen leading to a reduction in electron mobility in the bulk of the semiconductor. We use density functional theory quantum chemical calculations to ascribe the drop in mobility to the formation of a shallow, localized, oxygen-induced trap level, 0.34 eV below the delocalized lowest unoccupied molecular orbital of P(NDI2OD-T2). In contrast, the stability of the polymer anion against water is limited by two competing reactions, one involving the electrochemical oxidation of the polymer anion by water without degradation of the polymer and the other involving a radical anion-catalyzed chemical reaction of the polymer with water, in which the electron can be recycled and lead to further degradation reactions, such that a significant portion of the film is degraded after prolonged bias stressing. Using Raman spectroscopy, we have been able to ascribe this to a chemical interaction of water with the naphthalene diimide unit of the polymer. The degradation mechanisms identified here should be considered to explain electron trapping in other rylene diimides and possibly in other classes of conjugated polymers as well.

Effect of alpha-particle irradiation on the electrical properties of n-type Ge

NASA Astrophysics Data System (ADS)

Roro, K. T.; Janse van Rensburg, P. J.; Auret, F. D.; Coelho, S.

2009-12-01

Deep-level transient spectroscopy was used to investigate the effect of alpha particle irradiation on the electrical properties of n-type Ge. The samples were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radionuclide source. The main defects introduced were found to be electron traps with energy levels at EC-0.38, EC-0.21, EC-0.20, EC-0.15, and EC-0.10 eV, respectively. The main defects in alpha particle irradiation are similar to those introduced by MeV electron irradiation, where the main defect is the E-center. A quadratic increase in concentration as a function of dose is observed.

Extreme ultraviolet spectra of S IX and S X relevant to solar coronal plasmas

NASA Astrophysics Data System (ADS)

Ali, Safdar; Kato, Hiroyuki; Nakamura, Nobuyuki

2017-10-01

We present extreme ultraviolet laboratory spectra of highly charged S IX and S X measured using a compact electron beam ion trap. The data were recorded using a flat-field grazing incidence spectrometer in the wavelength range between 210 and 290 Å. The beam energy was tuned for three different values at 365, 410 and 465 eV while keeping electron beam current constant at 10 mA. By measuring the beam energy dependence, we identified several lines originating from S IX and S X ions with the support of collisional-radiative modeling. We compared them with the present calculations and transitions listed in the NIST data base and found in good agreement.

Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Thomas, D.; Puyoo, E.; Le Berre, M.; Militaru, L.; Koneti, S.; Malchère, A.; Epicier, T.; Roiban, L.; Albertini, D.; Sabac, A.; Calmon, F.

2017-11-01

Pt nanoparticles in a Al2O3 dielectric matrix thin films are elaborated by means of atomic layer deposition. These nanostructured thin films are integrated in vertical and planar test structures in order to assess both their in-plane and out-of-plane electrical properties. A shadow edge evaporation process is used to develop planar devices with electrode separation distances in the range of 30 nm. Both vertical and planar test structures show a Poole-Frenkel conduction mechanism. Low trap energy levels (<0.1 eV) are identified for the two test structures which indicates that the Pt islands themselves are not acting as traps in the PF mechanism. Furthermore, a more than three order of magnitude current density difference is observed between the two geometries. This electrical anisotropy is attributed to a large electron mobility difference in the in-plane and out-of-plane directions which can be related to different trap distributions in both directions.

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

NASA Astrophysics Data System (ADS)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Charge carrier transport properties in thallium bromide crystalls used as radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olschner, F.; Toledo-Quinones, M.; Shah, K.S.

1990-06-01

Thallium bromide (TlBr) is an attractive material for use in radiation detectors because of its wide bandgap (2.68 eV) and very high atomic number. Usefulness as a semiconductor detector material, however, also requires good charge carrier transport properties in order to maximize the magnitude of the signal from the detector. The authors report on measurements of the two most important transport parameters; the mobility {mu} and the mean trapping time {tau} for electrons and holes in TlBr crystals prepared in the laboratory.

Electron-molecule chemistry and charging processes on organic ices and Titan's icy aerosol surrogates

NASA Astrophysics Data System (ADS)

Pirim, C.; Gann, R. D.; McLain, J. L.; Orlando, T. M.

2015-09-01

Electron-induced polymerization processes and charging events that can occur within Titan's atmosphere or on its surface were simulated using electron irradiation and dissociative electron attachment (DEA) studies of nitrogen-containing organic condensates. The DEA studies probe the desorption of H- from hydrogen cyanide (HCN), acetonitrile (CH3CN), and aminoacetonitrile (NH2CH2CN) ices, as well as from synthesized tholin materials condensed or deposited onto a graphite substrate maintained at low temperature (90-130 K). The peak cross sections for H- desorption during low-energy (3-15 eV) electron irradiation were measured and range from 3 × 10-21 to 2 × 10-18 cm2. Chemical and structural transformations of HCN ice upon 2 keV electron irradiation were investigated using X-ray photoelectron and Fourier-transform infrared spectroscopy techniques. The electron-beam processed materials displayed optical properties very similar to tholins produced by conventional discharge methods. Electron and negative ion trapping lead to 1011 charges cm-2 on a flat surface which, assuming a radius of 0.05 μm for Titan aerosols, is ∼628 charges/radius (in μm). The facile charge trapping indicates that electron interactions with nitriles and complex tholin-like molecules could affect the conductivity of Titan's atmosphere due to the formation of large negative ion complexes. These negatively charged complexes can also precipitate onto Titan's surface and possibly contribute to surface reactions and the formation of dunes.

Charge dynamics of MgO single crystals subjected to KeV electron irradiation

NASA Astrophysics Data System (ADS)

Boughariou, A.; Blaise, G.; Braga, D.; Kallel, A.

2004-04-01

A scanning electron microscope has been equipped to study the fundamental aspects of charge trapping in insulating materials, by measuring the secondary electron emission (SEE) yield σ with a high precision (a few percent), as a function of energy, electron current density, and dose. The intrinsic secondary electron emission yield σ0 of uncharged MgO single crystals annealed at 1000 °C, 2 h, has been studied at four energies 1.1, 5, 15, and 30 keV on three different crystal orientations (100), (110), and (111). At low energies (1.1 and 5 keV) σ0 depends on the crystalline orientation wheras at high energies (30 keV) no differentiation occurs. It is shown that the value of the second crossover energy E2, for which the intrinsic SEE yield σ0=1, is extremely delicate to measure with precision. It is about 15 keV±500 eV for the (100) orientation, 13.5 keV±500 eV for the (110), and 18.5 keV±500 eV for the (111) one. At low current density J⩽105 pA/cm2, the variation of σ with the injected dose makes possible the observation of a self-regulated regime characterized by a steady value of the SEE yield σst=1. At low energies 1.1 and 5 keV, there is no current density effects in MgO, but at high energies ≈30 keV, apparent current density effects come from a bad collect of secondary electrons, due to very high negative surface potential. At 30 keV energy, an intense erratic electron exoemission was observed on the MgO (110) orientation annealed at 1500 °C. This phenomenon is the result of a disruptive process similar to flashover, which takes place at the surface of the material.

Point defects in CdTe xSe 1-x crystals grown from a Te-rich solution for applications in detecting radiation

DOE PAGES

Gul, R.; Roy, U. N.; Bolotnikov, A. E.; ...

2015-04-15

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

High-resolution grazing-incidence grating spectrometer for temperature measurements of low-Z ions emitting in the 100–300 Å spectral band

DOE PAGES

Widmann, K.; Beiersdorfer, P.; Magee, E. W.; ...

2014-09-19

In this paper, we have constructed a high-resolution grazing-incidence spectrometer designed for measuring the ion temperature of low-Z elements, such as Li + or Li 2 +, which radiate near 199 Å and 135 Å, respectively. Based on measurements at the Livermore Electron Beam Ion Trap we have shown that the instrumental resolution is better than 48 mÅ at the 200 Å setting and better than 40 mÅ for the 135-Å range. Such a high spectral resolution corresponds to an instrumental limit for line-width based temperature measurements of about 45 eV for the 199 Å Li+ and 65 eV formore » the 135 Å Li 2 + lines. Finally, recently obtained survey spectra from the Lithium Tokamak Experiment at the Princeton Plasma Physics Laboratory show the presence of these lithium emission lines and the expected core ion temperature of approximately 70 eV is sufficiently high to demonstrate the feasibility of utilizing our high-resolution spectrometer as an ion-temperature diagnostic.« less

Energy-density and repetition-rate dependences of the KrF-excimer-laser-induced 1.9-eV emission band in type-III fused silicas

NASA Astrophysics Data System (ADS)

Kuzuu, Nobu; Komatsu, Yoshikazu; Murahara, Masataka

1993-02-01

The energy-density and repetition-rate dependences of the intensity of KrF-excimer-laser (5.0 eV) -induced 1.9-eV emission band in type-III fused silicas synthesized under different conditions were investigated. The intensity of the 1.9-eV band is proportional to the 1.7-th power of the energy density and the 0.6-th power of the repetition rate of the laser pulse. The origin of these dependencies was discussed based on the trapped-oxygen-molecule model proposed by Awazu and Kawazoe; by irradiating with the excimer laser, ozone molecules are formed from dissolved oxygen molecules and 1.9-eV photons are emitted in the course of the photodecomposition of the ozone molecules. Therefore, a two-step photon-absorption process is needed to emit the 1.9-eV photon. To form the ozone molecule, diffusion of the oxygen atoms produced by the photodecomposition of the trapped oxygen molecules are needed. This model suggests that the intensity of the 1.9-eV band is proportional to the square of the energy density and the square root of the repetition rate; this dependency is nearly the same as that of our experimental result.

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCall, Kyle M.; Stoumpos, Constantinos C.; Kostina, Svetlana S.

The optical and electronic properties of Bridgman grown single crystals of the wide-bandgap semiconducting defect halide perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) have been investigated. Intense Raman scattering was observed at room temperature for each compound, indicating high polarizability and strong electron–phonon coupling. Both low-temperature and room-temperature photoluminescence (PL) were measured for each compound. Cs3Sb2I9 and Rb3Sb2I9 have broad PL emission bands between 1.75 and 2.05 eV with peaks at 1.96 and 1.92 eV, respectively. The Cs3Bi2I9 PL spectra showed broad emission consisting of several overlapping bands in the 1.65–2.2 eV range. Evidence of strong electron–phononmore » coupling comparable to that of the alkali halides was observed in phonon broadening of the PL emission. Effective phonon energies obtained from temperature-dependent PL measurements were in agreement with the Raman peak energies. A model is proposed whereby electron–phonon interactions in Cs3Sb2I9, Rb3Sb2I9, and Cs3Bi2I9 induce small polarons, resulting in trapping of excitons by the lattice. The recombination of these self-trapped excitons is responsible for the broad PL emission. Rb3Bi2I9, Rb3Sb2I9, and Cs3Bi2I9 exhibit high resistivity and photoconductivity response under laser photoexcitation, indicating that these compounds possess potential as semiconductor hard radiation detector materials.« less

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

NASA Astrophysics Data System (ADS)

Zhang, Z.; Farzana, E.; Sun, W. Y.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Kyle, E. C. H.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2015-10-01

The impact of annealing of proton irradiation-induced defects in n-type GaN devices has been systematically investigated using deep level transient and optical spectroscopies. Moderate temperature annealing (>200-250 °C) causes significant reduction in the concentration of nearly all irradiation-induced traps. While the decreased concentration of previously identified N and Ga vacancy related levels at EC - 0.13 eV, 0.16 eV, and 2.50 eV generally followed a first-order reaction model with activation energies matching theoretical values for NI and VGa diffusion, irradiation-induced traps at EC - 0.72 eV, 1.25 eV, and 3.28 eV all decrease in concentration in a gradual manner, suggesting a more complex reduction mechanism. Slight increases in concentration are observed for the N-vacancy related levels at EC - 0.20 eV and 0.25 eV, which may be due to the reconfiguration of other N-vacancy related defects. Finally, the observed reduction in concentrations of the states at EC - 1.25 and EC - 3.28 eV as a function of annealing temperature closely tracks the detailed recovery behavior of the background carrier concentration as a function of annealing temperature. As a result, it is suggested that these two levels are likely to be responsible for the underlying carrier compensation effect that causes the observation of carrier removal in proton-irradiated n-GaN.

Photo-Ultrasonic Study of Extrinsic Photoconductivity in N-Gallium Arsenide

NASA Astrophysics Data System (ADS)

Bradshaw, Randall Grant

We have measured the velocity of piezoelectrically -active, ultrasonic shear waves between 1.5 K and 68 K for undoped and for oxygen-doped n-type GaAs, during and after illumination at 4.2 K. The results reveal photoconductivity, persistent photoconductivity, and thermally stimulated conductivity. In both samples the Fermi level in the dark is controlled by excess non-shallow donors near 0.2 eV below the conduction band. Analysis of these effects in oxygen-doped material indicates that there are mid-gap and much shallower photoionizable levels and that there is an electron trap near 20 meV below the conduction band. The undoped n-GaAs sample exhibits photoconductivity quenching with photons in the range 0.95-1.26 eV which, by analysis of the quenching rate, is attributed to the EL2 defect. In addition, levels with large hole capture coefficients have been detected.

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Kim, Sungmin; Seo, David H.; Seo, Sunae; Won Kang, Tae; Wang, Kang L.

2012-01-01

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ˜4.5 V for the Ti-gate device and ˜9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

Anomalous auroral electron distributions due to an artificial ion beam in the ionosphere

NASA Technical Reports Server (NTRS)

Moore, T. E.; Arnoldy, R. L.; Kaufmann, R. L.; Cahill, L. J., Jr.; Kintner, P. M.; Walker, D. N.

1982-01-01

Results are reported for the perturbation of the auroral ionosphere by the operation of an ion gun which injected about 100 mA of 25-eV Ar(+) ions at upgoing pitch angles over a discrete auroral arc. The major effects observed were the excitation of intense broadband electric field fluctuations at zero-10 kHz, and the appearance of streaming and isotropic heating in different parts of superthermal electron velocity space. A scenario is explored in which electron runaway or streaming is expected between the trapping speed and the critical velocity for cyclotron interactions with the waves, where the streaming electrons carry the current that would be carried by thermals or energetic electrons in the absence of the waves. A current of about 1.0 microA/sq m is carried by the streaming electrons. The gun-associated electrons were anomalous in the sense that their anisotropy was the opposite of that observed in the natural aurora.

The Effect of Ion Energy and Substrate Temperature on Deuterium Trapping in Tungsten

NASA Astrophysics Data System (ADS)

Roszell, John Patrick Town

Tungsten is a candidate plasma facing material for next generation magnetic fusion devices such as ITER and there are major operational and safety issues associated with hydrogen (tritium) retention in plasma facing components. An ion gun was used to simulate plasma-material interactions under various conditions in order to study hydrogen retention characteristics of tungsten thus enabling better predictions of hydrogen retention in ITER. Thermal Desorption Spectroscopy (TDS) was used to measure deuterium retention from ion irradiation while modelling of TDS spectra with the Tritium Migration Analysis Program (TMAP) was used to provide information about the trapping mechanisms involved in deuterium retention in tungsten. X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) were used to determine the depth resolved composition of specimens used for irradiation experiments. Carbon and oxygen atoms will be among the most common contaminants within ITER. C and O contamination in polycrystalline tungsten (PCW) specimens even at low levels (˜0.1%) was shown to reduce deuterium retention by preventing diffusion of deuterium into the bulk of the specimen. This diffusion barrier was also responsible for the inhibition of blister formation during irradiations at 500 K. These observations may provide possible mitigation techniques for problems associated with tritium retention and mechanical damage to plasma facing components caused by hydrogen implantation. Deuterium trapping in PCW and single crystal tungsten (SCW) was studied as a function of ion energy and substrate temperature. Deuterium retention was shown to decrease with decreasing ion energy below 100 eV/D+. Irradiation of tungsten specimens with 10 eV/D+ ions was shown to retain up to an order of magnitude less deuterium than irradiation with 500 eV/D+ ions. Furthermore, the retention mechanism for deuterium was shown to be consistent across the entire energy range studied (10-500 eV) with the shallow penetration depth of low energy ions being the major factor in the reduction in retention. A change in retention mechanism was observed as tungsten temperature during irradiation was increased from 300 to 500 K. Modelling of deuterium retention in 300 and 500 K SCW specimens revealed that two traps, 1.0 and 1.3 eV, are involved in retention for irradiations performed at 300K while a single 2.1 eV trap is present for 500 K irradiations. Experiments suggest that the 2.1 eV trap is created during irradiation of tungsten at 500 K and this process also involves the annihilation of the 1.3 and 1.0 eV traps.

Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation

PubMed Central

2009-01-01

We have studied the optical properties and carrier dynamics in SnO2nanowires (NWs) with an average radius of 50 nm that were grown via the vapor–liquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO2NWs. Steady state transmission measurements revealed that the band gap of these NWs is 3.77 eV and contains two broad absorption bands. The first is located below the band edge (shallow traps) and the second near the center of the band gap (deep traps). Both of these absorption bands seem to play a crucial role in the relaxation of the photogenerated carriers. Time resolved measurements suggest that the photogenerated carriers take a few picoseconds to move into the shallow trap states whereas they take ~70 ps to move from the shallow to the deep trap states. Furthermore the recombination process of electrons in these trap states with holes in the valence band takes ~2 ns. Auger recombination appears to be important at the highest fluence used in this study (500 μJ/cm2); however, it has negligible effect for fluences below 50 μJ/cm2. The Auger coefficient for the SnO2NWs was estimated to be 7.5 ± 2.5 × 10−31 cm6/s. PMID:20596473

Low-energy electron scattering from atomic hydrogen. II. Elastic and inelastic scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

James, K.E. Jr.; Childers, J.G.; Khakoo, M.A.

2004-02-01

We present measurements of differential cross sections for elastic electron scattering from atomic hydrogen at 20 eV and 40 eV incident electron energies and ratios of differential cross sections for electron-impact excitation of atomic hydrogen to the n=2, 3, and 4 levels at incident electron energies of 14.6 eV, 15.6 eV, 17.6 eV, 20 eV, 25 eV, and 40 eV with scattering angles ranging from 10 deg. to 130 deg. We compare our results to available experimental measurements and recent convergent close-coupling calculations. Our results resolve significant discrepancies that existed between theory and past experiments.

The electronic and optical properties of amorphous silica with hydrogen defects by ab initio calculations

NASA Astrophysics Data System (ADS)

Ren, Dahua; Xiang, Baoyan; Hu, Cheng; Qian, Kai; Cheng, Xinlu

2018-04-01

Hydrogen can be trapped in the bulk materials in four forms: interstitial molecular H2, interstitial atom H, O‑H+(2Si=O–H)+, Si‑H‑( {{4O}}\\bar \\equiv {{Si&x2212H}})‑ to affect the electronic and optical properties of amorphous silica. Therefore, the electronic and optical properties of defect-free and hydrogen defects in amorphous silica were performed within the scheme of density functional theory. Initially, the negative charged states hydrogen defects introduced new defect level between the valence band top and conduction band bottom. However, the neutral and positive charged state hydrogen defects made both the valence band and conduction band transfer to the lower energy. Subsequently, the optical properties such as absorption spectra, conductivity and loss functions were analyzed. It is indicated that the negative hydrogen defects caused the absorption peak ranging from 0 to 2.0 eV while the positive states produced absorption peaks at lower energy and two strong absorption peaks arose at 6.9 and 9.0 eV. However, the neutral hydrogen defects just improved the intensity of absorption spectrum. This may give insights into understanding the mechanism of laser-induced damage for optical materials. Project supported by the Science and Technology of Hubei Provincial Department of Education (No. B2017098).

First measurement of Lyman alpha x-ray lines in hydrogen-like vanadium: results and implications for precision wavelength metrology and tests of QED

NASA Astrophysics Data System (ADS)

Gillaspy, J. D.; Chantler, C. T.; Paterson, D.; Hudson, L. T.; Serpa, F. G.; Takács, E.

2010-04-01

The first measurement of hydrogen-like vanadium x-ray Lyman alpha transitions has been made. The measurement was made on an absolute scale, fully independent of atomic structure calculations. Sufficient signal was obtained to reduce the statistical uncertainty to a small fraction of the total uncertainty budget. Potential sources of systematic error due to Doppler shifts were eliminated by performing the measurement on trapped ions. The energies for Ly α1 (1s-2p3/2) and Ly α2 (1s-2p1/2) are found to be 5443.95(25) eV and 5431.10(25) eV, respectively. These results are within approximately 1.5 σ (experimental) of the theoretical values 5443.63 eV and 5430.70 eV. The results are discussed in terms of their relation to the Lamb shift and the development of an x-ray wavelength standard based on a compact source of trapped highly charged ions.

Purification of p-type CdTe crystals by thermal treatment

NASA Astrophysics Data System (ADS)

Fochuk, P.; Rarenko, I.; Zakharuk, Z.; Nykoniuk, Ye.; Shlyakhovyj, V.; Bolotnikov, A. E.; Yang, Ge; James, R. B.

2014-09-01

We studied the influence of prolonged thermal treatment on the concentration and the acceptor energy level positions in p-CdTe samples. We found that heating them at 720 K entails a decrease in the concentration of electrically active centers, i.e., a "self-cleaning" of the adverse effects of some contaminants. In samples wherein the conductivity was determined by the concentration of acceptors of the A1 type (EV + 0.03-0.05) eV, after heating it becomes controlled by a deeper acceptor of the A2 type (EV + 0.13-0.14) eV, and both the charge-carrier's mobility and the ratio μр80/μр300 increase. This effect reflects the fact that during thermal treatment, the A1 acceptors and the compensating donors are removed from their electrically active positions, most likely due to their diffusion and trapping within the inclusions in the CdTe bulk, where they have little or no influence on carrier scattering and trapping.

TMAP-7 simulation of D2 thermal release data from Be co-deposited layers

NASA Astrophysics Data System (ADS)

Baldwin, M. J.; Schwarz-Selinger, T.; Yu, J. H.; Doerner, R. P.

2013-07-01

The efficacy of (1) bake-out at 513 K and 623 K, and (2) thermal transient (10 ms) loading to up to 1000 K, is explored for reducing D inventory in 1 μm thick Be-D (D/Be ˜0.1) co-deposited layers formed at 323 K for experiment (1) and ˜500 K for experiment (2). D release data from co-deposits are obtained by thermal desorption and used to validate a model input into the Tritium Migration & Analysis Program 7 (TMAP). In (1), good agreement with experiment is found for a TMAP model encorporating traps of activation energies, 0.80 eV and 0.98 eV, whereas an additional 2 eV trap was required to model experiment (2). Thermal release is found to be trap limited, but simulations are optimal when surface recombination is taken into account. Results suggest that thick built-up co-deposited layers will hinder ITER inventory control, and that bake periods (˜1 day) will be more effective in inventory reduction than transient thermal loading.

Statistical model and first-principles simulation on concentration of HenV cluster and He bubble formation in α-Fe and W

NASA Astrophysics Data System (ADS)

Liu, Yue-Lin; Yu, Yang; Dai, Zhen-Hong

2015-01-01

Using first-principles calculations, we investigate the stabilities of He and Hen-vacancy (HenV) clusters in α-Fe and W. Vacancy formation energies are 2.08 eV in α-Fe and 3.11 eV in W, respectively. Single He in both α-Fe and W prefers to occupy the tetrahedral interstitial site. We recalculated the He solution energy considering the effect of zero-point energy (ZPE). The ZPEs of He in α-Fe and W at the tetrahedral (octahedral) interstitial site are 0.072 eV (0.031 eV) and 0.078 eV (0.034 eV), respectively. The trapping energies of single He at vacancy in α-Fe and W are -2.39 eV and -4.55 eV, respectively. By sequentially adding He into vacancy, a monovacancy trap up to 10 He atoms distributing in the vacancy vicinity. Based on the above results combined with statistical model, we evaluate the concentrations of all relevant HenV clusters as a function of He chemical potential. The critical HenV concentration is found to be ∼10-40 (atomic) at the critical temperature T = 600 K in α-Fe and T = 1600 K in W, respectively. Beyond the critical HenV concentrations, considerable HenV aggregate to form HenVm clusters. By further growing of HenVm, the HenVm clusters grow bigger resulting in the larger He bubble formation.

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Kinetic Monte Carlo simulation on influence of vacancy on hydrogen diffusivity in tungsten

NASA Astrophysics Data System (ADS)

Oda, Takuji; Zhu, Deqiong; Watanabe, Yoshiyuki

2015-12-01

Kinetic Mote Carlo (KMC) simulations are performed to quantify the influence of trap in hydrogen diffusivity in tungsten. As a typical trap, mono-vacancy is considered in the simulation. Experimental results reported by Frauenfelder are nicely reproduced when hydrogen concentration and trap concentration expected in the experiment are employed in the simulation. The effective diffusivity of hydrogen is evidently decreased by traps even at high temperatures like 1300 K. These results suggest that only high-temperature experimental data, which are not significantly affected by traps, should be fitted to, in order to derive the true hydrogen diffusivity from experiments. Therefore, we recommend D = 1.58 ×10-7exp(- 0.25 eV / kT) m2 s-1 as the equation for hydrogen diffusion coefficient in tungsten, which was obtained by fitting only to experimental data at 1500-2400 K by Heinola and Ahlgren, rather than the most cited equation D = 4.1 ×10-7exp(- 0.39 eV / kT) m2 s-1, which was obtained by fitting to all experimental data at 1100-2400 K including some data that should be affected by traps.

Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Haas, Simon; Krellner, Cornelius; Mathis, Thomas; Batlogg, Bertram

2010-04-01

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap [trap density of states (trap DOS)] of small-molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT’s), single crystal field-effect transistors (SC-FET’s) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of “fast” hole traps in TFT’s made with vacuum-evaporated pentacene. For high-performance transistors made with small-molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase in the trap DOS very close (<0.15eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase in the trap DOS. Moreover, we show that the trap DOS in TFT’s with small-molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small-molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.

DLTS and in situ C-V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors

NASA Astrophysics Data System (ADS)

Shashank, N.; Singh, Vikram; Gupta, Sanjeev K.; Madhu, K. V.; Akhtar, J.; Damle, R.

2011-04-01

Ni/SiO2/Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li3+ ions with fluences ranging from 1×1010 to 1×1012 ions/cm2. High frequency C-V characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation.

Bipolar molecular composites: a new class of high-electron-mobility organic solids

NASA Astrophysics Data System (ADS)

Lin, Liang-Bih; Jenekhe, Samson A.; Borsenberger, Paul M.

1997-10-01

We describe high electron mobility in organic solids in the form of bipolar molecular composites of N,N'-bis(1,2-dimethylpropyl)-1,4,5,8-naphthalenetetracarboxylic diimide (NTDI) and tri-p-tolylaniine (TTA). The electron mobility in the NTDI/TTA composites is ~2 x 10 cm2/Vs, which is a factor of 4 to 6 higher than in pure NTDI and isone of the highest values reported for disordered organic solids. The field and temperature dependencies of the charge mobility can be described using the disorder formalism due to Bassler and co-workers, which provides an estimation of the energy width σ of the hopping site manifold. Analysis of the data gave σ=0.081 and 0.060 eV for the electron and hole mobilities in a NTDI/TTA composite of 0.5510.45 molar ratio. The energetic disorder for electron transport in the bipolar composites is substantially lower than for pure NTDI, which is 0.093 eV. The results suggest that the observed enhancement arises from a substantial reduction of energetic disorder in the electron transport manifold of the bipolar composites. The reduction of energetic disorder may be due to intermolecular charge transfer between NTDI and TTA. Such a charge transfer could stabilize the electron transport manifold by better charge delocalization, and consequently, less energetic disorder. Another possible reason for the observed enhanced electron mobility is the reduction of NTDI dimers that can act as carrier traps by the presence of TTA molecules in the bipolar composites. These results also suggest that bipolar composites represent a promising new class of high electron mobility organic solids.

Temperature dependence of deuterium retention mechanisms in tungsten

NASA Astrophysics Data System (ADS)

Roszell, J. P.; Davis, J. W.; Haasz, A. A.

2012-10-01

The retention of 500 eV D+ was measured as a function of implantation temperature in single- (SCW) and poly-crystalline (PCW) tungsten. The results show a decrease in retention of ˜2 orders of magnitude over the temperature range of 350-550 K in SCW and a decrease of an order of magnitude over the temperature range of 600-700 K in PCW. Inspection of the TDS spectra showed a shift in peak location from 600 to 800 K as temperature was increased above 350 K in SCW and above 450 K in PCW specimens. TMAP modeling showed that the change in peak location corresponds to a change in trapping energy from 1.3 eV for the 600 K peak to 2.1 eV for the 800 K peak. It is proposed that for implantations performed above 350 K in SCW and 450 K in PCW, deuterium-containing vacancies are able to diffuse and combine to create stable nano-bubbles within the crystal lattice. The formation of nano-bubbles due to the annihilation of deuterium-vacancy complexes results in a change in the trapping energy from 1.3 to 2.1 eV as well as a decrease in retention as some of the deuterium-vacancy complexes will be destroyed at surfaces or grain boundaries, decreasing the number of trapping sites available.

Influence of oxygen vacancy on the electronic structure of CaCu3Ti4O12 and its deep-level vacancy trap states by first-principle calculation

NASA Astrophysics Data System (ADS)

Xiao, H. B.; Yang, C. P.; Huang, C.; Xu, L. F.; Shi, D. W.; Marchenkov, V. V.; Medvedeva, I. V.; Bärner, K.

2012-03-01

The electronic structure, formation energy, and transition energy levels of intrinsic defects have been studied using the density-functional method within the generalized gradient approximation for neutral and charged oxygen vacancy in CaCu3Ti4O12 (CCTO). It is found that oxygen vacancies with different charge states can be formed in CCTO under both oxygen-rich and poor conditions for nonequilibrium and higher-energy sintering processes; especially, a lower formation energy is obtained for poor oxygen environment. The charge transition level (0/1+) of the oxygen vacancy in CCTO is located at 0.53 eV below the conduction-band edge. The (1+/2+) transition occurs at 1.06 eV below the conduction-band edge. Oxygen vacancies of Vo1+ and Vo2+ are positive stable charge states in most gap regions and can act as a moderately deep donor for Vo1+ and a borderline deep for Vo2+, respectively. The polarization and dielectric constant are considerably enhanced by oxygen vacancy dipoles, due to the off-center Ti and Cu ions in CCTO.

Positron spectroscopy of 2D materials using an advanced high intensity positron beam

NASA Astrophysics Data System (ADS)

McDonald, A.; Chirayath, V.; Lim, Z.; Gladen, R.; Chrysler, M.; Fairchild, A.; Koymen, A.; Weiss, A.

An advanced high intensity variable energy positron beam(~1eV to 20keV) has been designed, tested and utilized for the first coincidence Doppler broadening (CDB) measurements on 6-8 layers graphene on polycrystalline Cu sample. The system is capable of simultaneous Positron annihilation induced Auger electron Spectroscopy (PAES) and CDB measurements giving it unparalleled sensitivity to chemical structure at external surfaces, interfaces and internal pore surfaces. The system has a 3m flight path up to a micro channel plate (MCP) for the Auger electrons emitted from the sample. This gives a superior energy resolution for PAES. A solid rare gas(Neon) moderator was used for the generation of the monoenergetic positron beam. The positrons were successfully transported to the sample chamber using axial magnetic field generated with a series of Helmholtz coils. We will discuss the PAES and coincidence Doppler broadening measurements on graphene -Cu sample and present an analysis of the gamma spectra which indicates that a fraction of the positrons implanted at energies 7-60eV can become trapped at the graphene/metal interface. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides

PubMed Central

Mleczko, Michal J.; Zhang, Chaofan; Lee, Hye Ryoung; Kuo, Hsueh-Hui; Magyari-Köpe, Blanka; Moore, Robert G.; Shen, Zhi-Xun; Fisher, Ian R.; Nishi, Yoshio; Pop, Eric

2017-01-01

The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality “native” insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demonstrate that layered two-dimensional (2D) semiconductors HfSe2 and ZrSe2 have band gaps of 0.9 to 1.2 eV (bulk to monolayer) and technologically desirable “high-κ” native dielectrics HfO2 and ZrO2, respectively. We use spectroscopic and computational studies to elucidate their electronic band structure and then fabricate air-stable transistors down to three-layer thickness with careful processing and dielectric encapsulation. Electronic measurements reveal promising performance (on/off ratio > 106; on current, ~30 μA/μm), with native oxides reducing the effects of interfacial traps. These are the first 2D materials to demonstrate technologically relevant properties of silicon, in addition to unique compatibility with high-κ dielectrics, and scaling benefits from their atomically thin nature. PMID:28819644

Quasiparticle and hybrid density functional methods in defect studies: An application to the nitrogen vacancy in GaN

NASA Astrophysics Data System (ADS)

Lewis, D. K.; Matsubara, M.; Bellotti, E.; Sharifzadeh, S.

2017-12-01

Defects in semiconductors can play a vital role in the performance of electronic devices, with native defects often dominating the electronic properties of the semiconductor. Understanding the relationship between structural defects and electronic function will be central to the design of new high-performance materials. In particular, it is necessary to quantitatively understand the energy and lifetime of electronic states associated with the defect. Here, we apply first-principles density functional theory (DFT) and many-body perturbation theory within the GW approximation to understand the nature and energy of the defect states associated with a charged nitrogen vacancy on the electronic properties of gallium nitride (GaN), as a model of a well-studied and important wide gap semiconductor grown with defects. We systematically investigate the sources of error associated with the GW approximation and the role of the underlying atomic structure on the predicted defect state energies. Additionally, analysis of the computed electronic density of states (DOS) reveals that there is one occupied defect state 0.2 eV below the valence band maximum and three unoccupied defect states at energy of 0.2-0.4 eV above the conduction band minimum, suggesting that this defect in the +1 charge state will not behave as a carrier trap. Furthermore, we compare the character and energy of the defect state obtained from GW and DFT using the HSE approximate density functional and find excellent agreement. This systematic study provides a more complete understanding of how to obtain quantitative defect energy states in bulk semiconductors.

Photoinduced Br Desorption from CsBr Thin Films Grown on Cu(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halliday, Matthew T.; Joly, Alan G.; Hess, Wayne P.

2015-10-22

Thin films of CsBr deposited onto metals such as copper are potential photocathode materials for light sources and other applications. We investigate desorption dynamics of Br atoms from CsBr films grown on insulator (KBr, LiF) and metal (Cu) substrates induced by sub-bandgap 6.4 eV laser pulses. The experimental results demonstrate that the peak kinetic energy of Br atoms desorbed from CsBr/Cu films is much lower than that for the hyperthermal desorption from CsBr/LiF films. Kelvin probe measurements indicate negative charge at the surface following Br desorption from CsBr/Cu films. Our ab initio calculations of excitons at CsBr surfaces demonstrate thatmore » this behavior can be explained by an exciton model of desorption including electron trapping at the CsBr surface. Trapped negative charges reduce the energy of surface excitons available for Br desorption. We examine the electron-trapping characteristics of low-coordinated sites at the surface, in particular, divacancies and kink sites. We also provide a model of cation desorption caused by Franck-Hertz excitation of F centers at the surface in the course of irradiation of CsBr/Cu films. These results provide new insights into the mechanisms of photoinduced structural evolution of alkali halide films on metal substrates and activation of metal photocathodes coated with CsBr.« less

Polaronic and ionic conduction in NaMnO2: influence of native point defects

NASA Astrophysics Data System (ADS)

Zhu, Zhen; Peelaers, Hartwin; van de Walle, Chris G.

Layered NaMnO2 has promising applications as a cathode material for sodium ion batteries. We will discuss strategies to improve the electrical performance of NaMnO2, including how to optimize the conditions of synthesis and how impurity doping affects the performance. Using hybrid density functional theory, we explored the structural, electronic, and defect properties of bulk NaMnO2. It is antiferromagnetic in the ground state with a band gap of 3.75 eV. Small hole and electron polarons can form in the bulk either through self-trapping or adjacent to point defects. We find that both Na and Mn vacancies are shallow acceptors with the induced holes trapped as small polarons, while O vacancies are deep defect centers. Cation antisites, especially MnNa, are found to have low formation energies. As a result, we expect that MnNa exists in as-grown NaMnO2 in moderate concentrations, rather than forming only at a later stage of the charging process, at which point it causes undesirable structural phase transitions. Both electronic conduction, via polaron hopping, and ionic conduction, through VNa migration, are significantly affected by the presence of point defects. This work was supported by DOE.

Intense positron beam as a source for production of electron-positron plasma

NASA Astrophysics Data System (ADS)

Stoneking, M. R.; Horn-Stanja, J.; Stenson, E. V.; Pedersen, T. Sunn; Saitoh, H.; Hergenhahn, U.; Niemann, H.; Paschkowski, N.; Hugenschmidt, C.; Piochacz, C.

2016-10-01

We aim to produce magnetically confined, short Debye length electron-positron plasma and test predicted properties for such systems. A first challenge is obtaining large numbers of positrons; a table-top experiment (system size 5 cm) with a temperature less than 5 eV requires about 1010 positrons to have more than 10 Debye lengths in the system. The NEPOMUC facility at the FRM II research reactor in Germany is one of the world's most intense positron sources. We report on characterization (using a retarding field energy analyzer with magnetic field gradient) of the NEPOMUC beam as delivered to the open beam port at various beam energies and in both the re-moderated and primary beam configurations in order to design optimal trapping (and accumulation) schemes for production of electron-positron plasma. The intensity of the re-moderated (primary) beam is in the range 2 -3 x 107 /s (1 - 5 x 108 /s). The re-moderated beam is currently the most promising for direct injection and confinement experiments; it has a parallel energy spread of 15 - 35% and the transverse energy spread is 6 - 15% of the parallel energy. We report on the implications for injection and trapping in a dipole magnetic field as well as plans for beam development, in situ re-moderation, and accumulation. We also report results demonstrating a difference in phosphor luminescent response to low energy positrons versus electrons.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Design and Application of a High-Temperature Linear Ion Trap Reactor

NASA Astrophysics Data System (ADS)

Jiang, Li-Xue; Liu, Qing-Yu; Li, Xiao-Na; He, Sheng-Gui

2018-01-01

A high-temperature linear ion trap reactor with hexapole design was homemade to study ion-molecule reactions at variable temperatures. The highest temperature for the trapped ions is up to 773 K, which is much higher than those in available reports. The reaction between V2O6 - cluster anions and CO at different temperatures was investigated to evaluate the performance of this reactor. The apparent activation energy was determined to be 0.10 ± 0.02 eV, which is consistent with the barrier of 0.12 eV calculated by density functional theory. This indicates that the current experimental apparatus is prospective to study ion-molecule reactions at variable temperatures, and more kinetic details can be obtained to have a better understanding of chemical reactions that have overall barriers. [Figure not available: see fulltext.

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel.

PubMed

Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil

2013-03-13

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little Vth shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

2011-09-01

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

XPS studies of structure-induced radiation effects at the Si/SiO2 interface. [X ray Photoelectron Spectroscopy

NASA Technical Reports Server (NTRS)

Grunthaner, F. J.; Lewis, B. F.; Zamini, N.; Maserjian, J.; Madhukar, A.

1980-01-01

The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.

Long-lived and highly efficient green and blue phosphorescent emitters and device architectures for OLED displays

NASA Astrophysics Data System (ADS)

Eickhoff, Christian; Murer, Peter; Geßner, Thomas; Birnstock, Jan; Kröger, Michael; Choi, Zungsun; Watanabe, Soichi; May, Falk; Lennartz, Christian; Stengel, Ilona; Münster, Ingo; Kahle, Klaus; Wagenblast, Gerhard; Mangold, Hannah

2015-09-01

In this paper, two OLED device concepts are introduced. First, classical phosphorescent green carbene emitters with unsurpassed lifetime, combined with low voltage and high efficiency are presented and the associated optimized OLED stacks are explained. Second, a path towards highly efficient, long-lived deep blue systems is shown. The high efficiencies can be reached by having the charge-recombination on the phosphorescent carbene emitter while at the same time short emissive lifetimes are realized by fast energy transfer to the fluorescent emitter, which eventually allows for higher OLED stability in the deep blue. Device architectures, materials and performance data are presented showing that carbene type emitters have the potential to outperform established phosphorescent green emitters both in terms of lifetime and efficiency. The specific class of green emitters under investigation shows distinctly larger electron affinities (2.1 to 2.5 eV) and ionization potentials (5.6 to 5.8 eV) as compared to the "standard" emitter Ir(ppy)3 (5.0/1.6 eV). This difference in energy levels requires an adopted OLED design, in particular with respect to emitter hosts and blocking layers. Consequently, in the diode setup presented here, the emitter species is electron transporting or electron trapping. For said green carbene emitters, the typical peak wavelength is 525 nm yielding CIE color coordinates of (x = 0.33, y = 0.62). Device data of green OLEDs are shown with EQEs of 26 %. Driving voltage at 1000 cd/m2 is below 3 V. In an optimized stack, a device lifetime of LT95 > 15,000 h (1000 cd/m2) has been reached, thus fulfilling AMOLED display requirements.

SAND FLIES (DIPTERA: PSYCHODIDAE) IN AN ENDEMIC AREA OF LEISHMANIASIS IN AQUIDAUANA MUNICIPALITY, PANTANAL OF MATO GROSSO DO SUL , BRAZIL

PubMed Central

de FIGUEIREDO, Helen Rezende; SANTOS, Mirella Ferreira da Cunha; CASARIL, Aline Etelvina; INFRAN, Jucelei Oliveira de Moura; RIBEIRO, Leticia Moraes; FERNANDES, Carlos Eurico dos Santos; de OLIVEIRA, Alessandra Gutierrez

2016-01-01

SUMMARY The Aquidauana municipality is considered an endemic area of leishmaniasis and an important tourist site in Mato Grosso do Sul State. The aim of this study was to investigate the sand fly fauna in the city of Aquidauana. Captures were carried out twice a month, from April 2012 to March 2014 with automatic light traps and active aspiration, in the peridomicile and domicile of six residences. A total of 9,338 specimens were collected, 3,179 and 6,159 using light traps and active aspiration, respectively. The fauna consisted of: Brumptomyia brumpti, Evandromyia aldafalcaoae, Ev. evandroi, Ev. lenti, Ev. orcyi, Ev. sallesi, Ev. termitophila, Ev. walkeri, Lutzomyia longipalpis and Psathyromyia bigeniculata. The most abundant species captured was Lutzomyia longipalpis, present in all the ecotopes, predominantly in peridomicile areas, and mainly males. Leishmania DNA was not detected in the insects. It was observed the abundance of the sand fly fauna in the region, as well as the high frequency of Lu. longipalpis, the main vector of L. infantum. The results of this study show the need to increase the monitoring and more effective control measures. It is noteworthy that the studied region presents several activities related to tourism and recreation, increasing the risk of transmission of leishmaniasis to this particular human population. PMID:27982353

Electron acceleration in downward auroral field-aligned currents

NASA Astrophysics Data System (ADS)

Cran-McGreehin, Alexandra P.; Wright, Andrew N.

2005-10-01

The auroral downward field-aligned current is mainly carried by electrons accelerated up from the ionosphere into the magnetosphere along magnetic field lines. Current densities are typically of the order of a few μ Am-2, and the associated electrons are accelerated to energies of several hundred eV up to a few keV. This downward current has been modeled by Temerin and Carlson (1998) using an electron fluid. This paper extends that model by describing the electron populations via distribution functions and modeling all of the F region. We assume a given ion density profile, and invoke quasi-neutrality to solve for the potential along the field line. Several important locations and quantities emerge from this model: the ionospheric trapping point, below which the ionospheric population is trapped by an ambipolar electric field; the location of maximum E∥, of the order of a few mVm-1, which lies earthward of the B/n peak; the acceleration region, located around the B/n peak, which normally extends between altitudes of 500 and 3000 km; and the total potential increase along the field line, of the order of a few hundred V up to several kV. The B/n peak is found to be the central factor determining the altitude and magnitude of the accelerating potential required. Indeed, the total potential drop is found to depend solely on the equilibrium properties in the immediate vicinity of the B/n peak.

The influence of isomer purity on trap states and performance of organic thin-film transistors.

PubMed

Diemer, Peter J; Hayes, Jacori; Welchman, Evan; Hallani, Rawad; Pookpanratana, Sujitra J; Hacker, Christina A; Richter, Curt A; Anthony, John E; Thonhauser, Timo; Jurchescu, Oana D

2017-01-01

Organic field-effect transistor (OFET) performance is dictated by its composition and geometry, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on purity and microstructure. When present, impurities and defects give rise to trap states in the bandgap of the OSC, lowering device performance. Here, 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene is used as a model system to study the mechanism responsible for performance degradation in OFETs due to isomer coexistence. The density of trapping states is evaluated through temperature dependent current-voltage measurements, and it is discovered that OFETs containing a mixture of syn - and anti -isomers exhibit a discrete trapping state detected as a peak located at ~ 0.4 eV above the valence-band edge, which is absent in the samples fabricated on single-isomer films. Ultraviolet photoelectron spectroscopy measurements and density functional theory calculations do not point to a significant difference in electronic band structure between individual isomers. Instead, it is proposed that the dipole moment of the syn -isomer present in the host crystal of the anti -isomer locally polarizes the neighboring molecules, inducing energetic disorder. The isomers can be separated by applying gentle mechanical vibrations during film crystallization, as confirmed by the suppression of the peak and improvement in device performance.

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Temperature dependence of a superconducting tunnel junction x-ray detector

NASA Astrophysics Data System (ADS)

Hiller, Lawrence J.; Labov, Simon E.; Mears, Carl A.; Barfknecht, Andrew T.; Frank, Matthias A.; Netel, Harrie; Lindeman, Mark A.

1995-09-01

Superconducting tunnel junctions can be used as part of a high-resolution, energy-dispersive x- ray detector. The energy of the absorbed x ray is used to break superconducting electron pairs, producing on the order of 10(superscript 6) excitations, called quasiparticles. The number of quasiparticles produced is proportional to the energy of the absorbed x ray. When a bias voltage is maintained across the barrier, these quasiparticles produce a net tunneling current. Either the peak tunneling current or the total tunneled charge may be measured to determine the energy of the absorbed x ray. The tunneling rate, and therefore the signal, is enhanced by the use of a quasiparticle trap near the tunnel barrier. The trapping efficiency is improved by decreasing the energy gap, though this reduces the maximum temperature at which the device may operate. In our niobium/aluminum configuration, we can very the energy gap in the trapping layer by varying its thickness. This paper examines the performance of two devices with 50 nm aluminum traps at temperatures ranging from 100 mK to 700 mK. We found that this device has a very good energy resolution of about 12 eV FWHM at 1 keV. This energy resolution is independent of temperature for much of this temperature range.

EPR and photoluminescence study of irradiated anion-defective alumina single crystals

NASA Astrophysics Data System (ADS)

Kortov, V. S.; Ananchenko, D. V.; Konev, S. F.; Pustovarov, V. A.

2017-09-01

Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectra of anion-defective alumina single crystals were measured. Exposure to a dose 10 Gy-1 kGy causes isotropic EPR signal of a complex form, this signal contains narrow and broad components. At the same time, in the PL spectrum alongside with a band of F+-centers (3.8 eV) an additional emission band with the maximum of 2.25 eV is registered. This band corresponds to aggregate F22+-centers which were create under irradiation. By comparing measurements in EPR and PL spectra with further stepped annealing in the temperature range of 773-1473 K of the samples exposed to the same doses, we were able to conclude that a narrow component of isotropic EPR signal is associated with the formation of paramagnetic F22+-centers under irradiation. A wide component can be caused by deep hole traps which are created by a complex defect (VAl2- - F+) with a localized hole.

Response of thermoluminescent lithium fluoride (TLD-100) to photon beams of 275, 400, 500, 600, 730, 900, 1200, 1500, and 2500 eV.

PubMed

Carrillo, R E; Pearson, D W; DeLuca, P M; MacKay, J F; Lagally, M G

1994-11-01

LiF:Mg,Ti (TLD-100) extruded ribbons and cleaved crystals were exposed to monoenergetic photons of 275-2550 eV energy to determine their potential usefulness as radiation dosimeters for radiobiology experiments at these energies. The radiation source was synchrotron radiation from the 1 GeV electron storage ring, Aladdin. The authors report TLD response and glow curves for He- and air-annealed dosimeters. The undesirable effects of air annealing increase with decreasing photon penetration in the dosimeter. Under certain experimental conditions, UV radiation produced anomalous bleaching of high-temperature traps. The crystals and the chips presented a supralinear response, Supralinearity factors were determined to be of the order of 1.5 for crystals, and 1.7 for the chips. The authors' results indicate that TLDs are a reliable means to monitor the total energy deposited in irradiated cells and are now used routinely for radiobiology cell irradiations.

Diagnostics of Particles emitted from a Laser generated Plasma: Experimental Data and Simulations

NASA Astrophysics Data System (ADS)

Costa, Giuseppe; Torrisi, Lorenzo

2018-01-01

The charge particle emission form laser-generated plasma was studied experimentally and theoretically using the COMSOL simulation code. The particle acceleration was investigated using two lasers at two different regimes. A Nd:YAG laser, with 3 ns pulse duration and 1010 W/cm2 intensity, when focused on solid target produces a non-equilibrium plasma with average temperature of about 30-50 eV. An Iodine laser with 300 ps pulse duration and 1016 W/cm2 intensity produces plasmas with average temperatures of the order of tens keV. In both cases charge separation occurs and ions and electrons are accelerated at energies of the order of 200 eV and 1 MeV per charge state in the two cases, respectively. The simulation program permits to plot the charge particle trajectories from plasma source in vacuum indicating how they can be deflected by magnetic and electrical fields. The simulation code can be employed to realize suitable permanent magnets and solenoids to deflect ions toward a secondary target or detectors, to focalize ions and electrons, to realize electron traps able to provide significant ion acceleration and to realize efficient spectrometers. In particular it was applied to the study two Thomson parabola spectrometers able to detect ions at low and at high laser intensities. The comparisons between measurements and simulation is presented and discussed.

Investigation of the Photocurrent in Hot-Wall-Epitaxy-Grown BaIn2S4 Layers

NASA Astrophysics Data System (ADS)

You, S. H.; Hong, K. J.; Jeong, T. S.; Youn, C. J.

2015-12-01

The photocurrent (PC) of hot-wall-epitaxy-grown BaIn2S4 layers was studied at different temperatures and for different photoresponse intensities. With increasing temperature, the position of the PC spectra tended to shift toward longer wavelength. These PC peaks corresponded to band-to-band transitions caused by intrinsic transitions from the valence band states to the conduction band states. Also, the bandgap variations were well matched by the equation E g( T) = E g(0) - 3.79 × 10-3 T 2/( T + 499), where E g(0) was estimated to be 3.0597 eV, 3.2301 eV, and 3.2606 eV for transitions corresponding to the valence band states Γ 4(z), Γ 5(x), and Γ 5(y), respectively. By use of the selection rule and results from the PC spectroscopy, the crystal field and the spin-orbit splitting were found to be 0.1703 and 0.0306 eV, respectively. Thus, the PC intensity gradually decreased with decreasing temperature. The decrease of PC intensity was caused by the presence of trapping centers associated with native defects in the BaIn2S4 layers. The trap level was found to be a shallow donor-level type of 20.4 meV, 1.6 meV below the conduction band. Consequently, these trap levels, which are related to native defects in BaIn2S4 layers, are believed to limit PC intensity with decreasing temperature.

Wavelength-dependent ultrafast charge carrier separation in the WO 3/BiVO 4 coupled system

DOE PAGES

Grigioni, Ivan; Stamplecoskie, Kevin G.; Jara, Danilo H.; ...

2017-05-08

Due to its ~2.4 eV band gap, BiVO 4 is a very promising photoanode material for harvesting the blue portion of the solar light for photoelectrochemical (PEC) water splitting applications. In WO 3/BiVO 4 heterojunction films, the electrons photoexcited in BiVO 4 are injected into WO 3, overcoming the lower charge carriers’ diffusion properties limiting the PEC performance of BiVO 4 photoanodes. Here, we investigate by ultrafast transient absorption spectroscopy the charge carrier interactions occurring at the interface between the two oxides in heterojunction systems to directly unveil their wavelength dependence. Under selective BiVO 4 excitation, a favorable electron transfermore » from photoexcited BiVO 4 to WO 3 occurs immediately after excitation and leads to an increase of the trapped holes’ lifetime in BiVO4. However, a recombination channel opens when both oxides are simultaneously excited, evidenced by a shorter lifetime of trapped holes in BiVO 4. As a result, PEC measurements reveal the implication of these wavelength-dependent ultrafast interactions on the performances of the WO 3/BiVO 4 heterojunction.« less

Wavelength-dependent ultrafast charge carrier separation in the WO 3/BiVO 4 coupled system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigioni, Ivan; Stamplecoskie, Kevin G.; Jara, Danilo H.

Due to its ~2.4 eV band gap, BiVO 4 is a very promising photoanode material for harvesting the blue portion of the solar light for photoelectrochemical (PEC) water splitting applications. In WO 3/BiVO 4 heterojunction films, the electrons photoexcited in BiVO 4 are injected into WO 3, overcoming the lower charge carriers’ diffusion properties limiting the PEC performance of BiVO 4 photoanodes. Here, we investigate by ultrafast transient absorption spectroscopy the charge carrier interactions occurring at the interface between the two oxides in heterojunction systems to directly unveil their wavelength dependence. Under selective BiVO 4 excitation, a favorable electron transfermore » from photoexcited BiVO 4 to WO 3 occurs immediately after excitation and leads to an increase of the trapped holes’ lifetime in BiVO4. However, a recombination channel opens when both oxides are simultaneously excited, evidenced by a shorter lifetime of trapped holes in BiVO 4. As a result, PEC measurements reveal the implication of these wavelength-dependent ultrafast interactions on the performances of the WO 3/BiVO 4 heterojunction.« less

Balloon-Assisted Technique for Trapped Microcatheter Retrieval Following Onyx Embolization

PubMed Central

Santillan, A.; Zink, W.; Knopman, J.; Riina, H.; Gobin, Y.P.

2009-01-01

Summary During embolization of a large frontal arteriovenous malformation (AVM), Onyx-18 (eV3) was injected into an M3 branch of the middle cerebral artery via a Marathon microcatheter (eV3). After 40 minutes of embolization, the microcatheter could not be retracted due to fixation within the Onyx cast despite prolonged, robust attempts. A balloon microcatheter (HyperformTM, eV3) was advanced distally and inflated to provide distal counter tension, allowing microcatheter retrieval with minimal traction on the vasculature. PMID:20465885

Experiments Towards Mitigation of Motional Heating in Trapped Ion Quantum Information Processing

DTIC Science & Technology

2016-02-27

in our surface electrode trap chips. The distance-dependence measurement was taken by Deslauri- ers et al . using a 3D needle trap [9]. These results...heating rate fit for this data is shown in Figure 6-5. 68 Delay time (ms) A ve ra ge M o ti o n al O cc u p at io n al L ev el ( ) <n...Wineland. Cooling in traps. Physica Scripta, 22:216–223, 1988 . [18] W. Itano and D. Wineland. Laser cooling of ions stored in harmonic and penning traps

Axions from 1987A

NASA Technical Reports Server (NTRS)

Turner, Michael S.

1988-01-01

The process of axion emission from SN 1987A by nucleon-nucleon axion bremsstrahlung is investigated based on neutrino observations. The results indicate that the axion luminosity must be less than about 10 to the 53rd erg/s if: (1) axions couple very weakly (with an axion mass of less than about 0.75 x 10 to the -3rd); or (2) axions couple strongly enough to be trapped and radiated from an axion sphere with T sub a of less than about 8 MeV (with an axion mass of greater than about 2.2 eV). Axion trapping is found to occur for axion masses of greater than about 0.016 eV.

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

Microcalorimeters for High Resolution X-Ray Spectroscopy of Laboratory and Astrophysical Plasmas

NASA Technical Reports Server (NTRS)

Silver, E.; Flowers, Bobby J. (Technical Monitor)

2003-01-01

The proposal has three major objectives. The first focuses on advanced neutron-transmutation-doped (NTD)-based microcalorimeter development. Our goal is to develop an array of microcalorimeters with sub- 5 eV energy resolution that can operate with pile-up-free throughput of at least 100 Hz per pixel. The second objective is to establish our microcalorimeter as an essential x-ray diagnostic for laboratory astrophysics studies. We propose to develop a dedicated microcalorimeter spectrometer for the EBIT (electron beam ion trap). This instrument will incorporate the latest detector and cryogenic technology that we have available. The third objective is to investigate innovative ideas related to possible flight opportunities. These include compact, long lived cryo-systems, ultra-low temperature cold stages, low mass and low power electronics, and novel assemblies of thin windows with high x-ray transmission.

Lifetime degradation of n-type Czochralski silicon after hydrogenation

NASA Astrophysics Data System (ADS)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

NASA Astrophysics Data System (ADS)

Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

2015-11-01

This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

Picosecond absorption spectroscopy of self-trapped excitons and transient Ce states in LaBr3 and LaBr3:Ce

NASA Astrophysics Data System (ADS)

Li, Peiyun; Gridin, Sergii; Ucer, K. Burak; Williams, Richard T.; Menge, Peter R.

2018-04-01

Picosecond time-resolved optical absorption spectra induced by two-photon interband excitation of LaBr3 are reported. The spectra are similar in general characteristics to self-trapped exciton (STE) absorption previously measured in alkali halides and alkaline-earth halides. A broad ultraviolet absorption band results from excitation of the self-trapped hole within the STE. A series of infrared and red-visible bands results from excitation of the bound outer electron within the STE similar to bands found in alkali halides corresponding to different degrees of "off-center" relaxation. Induced absorption in cerium-doped LaBr3 after band-gap excitation of the host exhibits similar STE spectra, except it decays faster on the tens-of-picoseconds scale in proportion to the Ce concentration. This is attributed to dipole-dipole energy transfer from STE to Ce3 + dopant ions. The absorption spectra were also measured after direct excitation of the Ce3 + ions with sufficient intensity to drive two- and three-photon resonantly enhanced excitation. In this case, the spectrum attributed to STEs created adjacent to Ce3 + ions decays in 1 ps suggesting dipole-dipole transfer from the nearest-neighbor separation. A transient absorption band at 2.1 eV growing with Ce concentration is found and attributed to a charge-transfer excitation of the Ce3 +* excited state responsible for scintillation in LaBr3:Ce crystals. This study concludes that the energy transport from host to activator responsible for the scintillation of LaBr3:Ce proceeds by STE creation and dipole-dipole transfer more than by sequential trapping of holes and electrons on Ce3 + ions.

Uncovering the density of nanowire surface trap states hidden in the transient photoconductance.

PubMed

Xu, Qiang; Dan, Yaping

2016-09-21

The gain of nanoscale photoconductors is closely correlated with surface trap states. Mapping out the density of surface trap states in the semiconductor bandgap is crucial for engineering the performance of nanoscale photoconductors. Traditional capacitive techniques for the measurement of surface trap states are not readily applicable to nanoscale devices. Here, we demonstrate a simple technique to extract the information on the density of surface trap states hidden in the transient photoconductance that is widely observed. With this method, we found that the density of surface trap states of a single silicon nanowire is ∼10(12) cm(-2) eV(-1) around the middle of the upper half bandgap.

Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Peta, Koteswara Rao; Kim, Moon Deock

2018-01-01

The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is studied using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) characteristics. I-V measurement in this study is in the range of 140 K-420 K in steps of 10 K. A reduction in voltage dependent barrier height and a strong internal electric field in depletion region under reverse bias suggested electric field enhanced thermionic emission in carrier transport via defect states in Au/Ni/GaN SBD. A detailed analysis of reverse leakage current revealed two different predominant transport mechanisms namely variable-range hopping (VRH) and Poole-Frenkel (PF) emission conduction at low (<260 K) and high (>260 K) temperatures respectively. The estimated thermal activation energies (0.20-0.39 eV) from Arrhenius plot indicates a trap assisted tunneling of thermally activated electrons from a deep trap state into a continuum of states associated with each conductive threading dislocation.

Defect healing at room temperature in pentacene thin films and improved transistor performance

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Meier, Fabian; Mattenberger, Kurt; Batlogg, Bertram

2007-11-01

We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10-8mbar ), the device performance is found to improve with time. The effective field-effect mobility increases by as much as a factor of 2 and mobilities up to 0.45cm2/Vs were achieved. In addition, the contact resistance decreases by more than an order of magnitude and there is a significant reduction in current hysteresis. Oxygen and nitrogen exposure as well as annealing experiments show the improvement of the electronic parameters to be driven by a thermally promoted process and not by chemical doping. In order to extract the spectral density of trap states from the transistor characteristics, we have implemented a powerful scheme which allows for a calculation of the trap densities with high accuracy in a straightforward fashion. We show the performance improvement to be due to a reduction in the density of shallow traps ⩽0.15eV from the valence band edge, while the energetically deeper traps are essentially unaffected. This work contributes to an understanding of the shallow traps in organic semiconductors and identifies structural point defects within the grains of the polycrystalline thin films as a major cause.

Real-time sub-Ångstrom imaging of reversible and irreversible conformations in rhodium catalysts and graphene

NASA Astrophysics Data System (ADS)

Kisielowski, Christian; Wang, Lin-Wang; Specht, Petra; Calderon, Hector A.; Barton, Bastian; Jiang, Bin; Kang, Joo H.; Cieslinski, Robert

2013-07-01

The dynamic responses of a rhodium catalyst and a graphene sheet are investigated upon random excitation with 80 kV electrons. An extraordinary electron microscope stability and resolution allow studying temporary atom displacements from their equilibrium lattice sites into metastable sites across projected distances as short as 60 pm. In the rhodium catalyst, directed and reversible atom displacements emerge from excitations into metastable interstitial sites and surface states that can be explained by single atom trajectories. Calculated energy barriers of 0.13 eV and 1.05 eV allow capturing single atom trapping events at video rates that are stabilized by the Rh [110] surface corrugation. Molecular dynamics simulations reveal that randomly delivered electrons can also reversibly enhance the sp3 and the sp1 characters of the sp2-bonded carbon atoms in graphene. The underlying collective atom motion can dynamically stabilize characteristic atom displacements that are unpredictable by single atom trajectories. We detect three specific displacements and use two of them to propose a path for the irreversible phase transformation of a graphene nanoribbon into carbene. Collectively stabilized atom displacements greatly exceed the thermal vibration amplitudes described by Debye-Waller factors and their measured dose rate dependence is attributed to tunable phonon contributions to the internal energy of the systems. Our experiments suggest operating electron microscopes with beam currents as small as zepto-amperes/nm2 in a weak-excitation approach to improve on sample integrity and allow for time-resolved studies of conformational object changes that probe for functional behavior of catalytic surfaces or molecules.

Dissociation of CH4 by electron impact: Production of metastable hydrogen and carbon fragments

NASA Technical Reports Server (NTRS)

Finn, T. G.; Carnahan, B. L.; Zipf, E. C.

1974-01-01

Metastable fragments produced by electron impact excitation of CH4 have been investigated for incident electron energies from threshold to 300 eV. Only metastable hydrogen and carbon atoms were observed. Onset energies for the production of metastable hydrogen atoms were observed at electron impact energies of 22.0 + or - .5 eV, 25.5 + or - .6 eV, 36.7 + or - .6 eV and 66 + or - 3 eV, and at 26.6 + or - .6 eV for the production of metastable carbon atoms. Most of the fragments appear to have been formed in high-lying Rydberg states. The total metastable hydrogen cross section reaches a maximum value of approximately 1 X 10 to the minus 18th power sq cm at 100 eV. At the same energy, the metastable carbon cross section is 2 x 10 to the minus 19th power sq cm.

Methods and Strategies for the Ab Initio Design of Novel Manganese Oxide- Based Water Splitting Photocatalyst Materials

NASA Astrophysics Data System (ADS)

Kanan, Dalal K.

Photoelectrochemical cells (PECs) use sunlight to drive endoergic reactions such as carbon dioxide reduction to fuels or water-splitting for renewable hydrogen production. However, materials that combine both the efficiency and low cost needed to make solar-powered catalysis a practical reality have yet to be discovered. This thesis presents methods and new design strategies for developing novel, efficient, robust, and inexpensive photocatalysts based on transition metal oxides (TMOs). Quantum mechanics methodologies are developed and tested for their ability to predict the properties of known materials and then used to predict how altering the composition by alloying and doping with abundant elements affects optical, electronic, transport, and catalytic properties. The first material considered for photocatalysis is MnO, the bio-inspired solid state analogue of the photosystem II active site. GW theory with input from hybrid DFT and ab initio DFT+U capably predicts the photoemission/inverse photoemission (PE/IPE) band gap and dielectric properties. An ab initio value of U-J = 3.5 eV for Mn2+ was determined using unrestricted Hartree-Fock theory on cluster-size-converged electrostatically embedded clusters. The lowest-lying excitations in MnO, studied using ECW theory, are found to be single Mn d → d ligand field excitations (~2.5 eV, ~108 s lifetime), followed by double d → d excitations (~5.2 eV, ~106 s lifetime), Mn 3d-4s excitations (~6.3 eV, ~10-3 s lifetime), and higher-lying O 2p → Mn 3d ligand-to-metal charge-transfer (LMCT) excitations (~10.1 eV, ~10-4 s lifetime). The longer-lived transitions should exhibit better electron-hole pair separation and enhance photoconductivity depending on ease of carrier transport. While MnO possesses suitable band edge energies, its band gap is too large for efficient sunlight absorption. We predict alloying MnO with ZnO in varying amounts reduces the PE/IPE band gap (to 2.6 eV for the 1:1 alloy) while preserving potential redox reactivity. Optical excitation studies show alloying lowers the LMCT transition to ~8.3 eV leaving all other absorption properties relatively unchanged. We find near degeneracies among spin-allowed and spin-forbidden LMCT states that could facilitate intersystem crossing (ISC) resulting in longer lifetimes. We suggest seeking other materials that exhibit similar LMCT excitations but that are visible-light activated as a design strategy for further enhancing photon conversion efficiencies. Additionally, several dopants (Al, Ga, In, Sc, Y, Ti, Sb, Gd, F (n-type dopants) and Li (a p-type dopant)) were assessed for their ability to enhance conductivity in MnO:ZnO. We find Ga, Sc, Ti, F, and Sb dopants create deep traps whereas In forms shallower traps that merit further investigation. In contrast, Y, Al, Gd, and Li dopants should increase the carrier concentration while maintaining favorable electron and hole transport pathways. The adsorption and oxidation of water on MnO:ZnO(001) surface was studied with ab initio DFT+U calculations. The computed phase diagram for the water/MnO:ZnO(001) interface reveals the surface is quite hydrophilic with the half-dissociated 1 ML (2 ML) structure being most stable under water-poor (water-rich) conditions. For the gas phase water oxidation reaction, we compute a thermodynamic overpotential of 0.82 V without yet modeling reaction kinetics or solvation. The overpotential mainly results from the *OOH intermediate being too weakly bound to the surface because of a loss of resonance stabilization in the adsorbate. We suggest judicious doping as a way to stabilize *OOH and potentially reduce the overpotential to just 0.05 V (for 0.5 ML reaction coverage). (Abstract shortened by UMI.)

Current injection and transport in polyfluorene

NASA Astrophysics Data System (ADS)

Yang, Chieh-Kai; Yang, Chia-Ming; Liao, Hua-Hsien; Horng, Sheng-Fu; Meng, Hsin-Fei

2007-08-01

A comprehensive numerical model is established for the electrical processes in a sandwich organic semiconductor device with high carrier injection barrier. The charge injection at the anode interface with 0.8eV energy barrier is dominated by the hopping among the gap states of the semiconductor caused by disorders. The Ohmic behavior at low voltage is demonstrated to be not due to the background doping but the filaments formed by conductive clusters. In bipolar devices with low work function cathode it is shown that near the anode the electron traps significantly enhance hole injection through Fowler-Nordheim tunneling, resulting in rapid increases of the hole carrier and current in comparison with the hole-only devices.

Measurement of Anomalously Strong Emission from the 1s-9p Transition in the Spectrum of H-like Phosphorus Following Charge Exchange with Molecular Hydrogen

NASA Technical Reports Server (NTRS)

Leutenegger, M. A.; Beiersdorfer, P.; Brown, G. V.; Kelley, R. L.; Porter, F. S.

2010-01-01

We have measured K-shell x-ray spectra of highly ionized argon and phosphorus following charge exchange with molecular hydrogen at low collision energy in an electron beam ion trap using an x-ray calorimeter array with approx.6 eV resolution. We find that the emission at the high-end of the Lyman series is greater by a factor of two for phosphorus than for argon, even though the measurement was performed concurrently and the atomic numbers are similar. This does not agree with current theoretical models and deviates from the trend observed in previous measurements.

Electron-impact coherence parameters for 41 P 1 excitation of zinc

NASA Astrophysics Data System (ADS)

Piwiński, Mariusz; Kłosowski, Łukasz; Chwirot, Stanisław; Fursa, Dmitry V.; Bray, Igor; Das, Tapasi; Srivastava, Rajesh

2018-04-01

We present electron-impact coherence parameters (EICP) for electron-impact excitation of 41 P 1 state of zinc atoms for collision energies 40 eV and 60 eV. The experimental results are presented together with convergent close-coupling and relativistic distorted-wave approximation theoretical predictions. The results are compared and discussed with EICP data for collision energies 80 eV and 100 eV.

Defect states and their energetic position and distribution in organic molecular semiconductors

NASA Astrophysics Data System (ADS)

Sharma, Akanksha; Yadav, Sarita; Kumar, Pramod; Ray Chaudhuri, Sumita; Ghosh, Subhasis

2013-04-01

Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.

Influence of organic ions on DNA damage induced by 1 eV to 60 keV electrons.

PubMed

Zheng, Yi; Sanche, Léon

2010-10-21

We report the results of a study on the influence of organic salts on the induction of single strand breaks (SSBs) and double strand breaks (DSBs) in DNA by electrons of 1 eV to 60 keV. Plasmid DNA films are prepared with two different concentrations of organic salts, by varying the amount of the TE buffer (Tris-HCl and EDTA) in the films with ratio of 1:1 and 6:1 Tris ions to DNA nucleotide. The films are bombarded with electrons of 1, 10, 100, and 60 000 eV under vacuum. The damage to the 3197 base-pair plasmid is analyzed ex vacuo by agarose gel electrophoresis. The highest yields are reached at 100 eV and the lowest ones at 60 keV. The ratios of SSB to DSB are surprisingly low at 10 eV (∼4.3) at both salt concentrations, and comparable to the ratios measured with 100 eV electrons. At all characteristic electron energies, the yields of SSB and DSB are found to be higher for the DNA having the lowest salt concentration. However, the organic salts are more efficient at protecting DNA against the damage induced by 1 and 10 eV electrons. DNA damage and protection by organic ions are discussed in terms of mechanisms operative at each electron energy. It is suggested that these ions create additional electric fields within the groove of DNA, which modify the resonance parameter of 1 and 10 eV electrons, namely, by reducing the electron capture cross-section of basic DNA units and the lifetime of corresponding transient anions. An interstrand electron transfer mechanism is proposed to explain the low ratios for the yields of SSB to those of DSB produced by 10 eV electrons.

Influence of organic ions on DNA damage induced by 1 eV to 60 keV electrons

PubMed Central

Zheng, Yi; Sanche, Léon

2011-01-01

We report the results of a study on the influence of organic salts on the induction of single strand breaks (SSBs) and double strand breaks (DSBs) in DNA by electrons of 1 eV to 60 keV. Plasmid DNA films are prepared with two different concentrations of organic salts, by varying the amount of the TE buffer (Tris-HCl and EDTA) in the films with ratio of 1:1 and 6:1 Tris ions to DNA nucleotide. The films are bombarded with electrons of 1, 10, 100, and 60 000 eV under vacuum. The damage to the 3197 base-pair plasmid is analyzed ex vacuo by agarose gel electrophoresis. The highest yields are reached at 100 eV and the lowest ones at 60 keV. The ratios of SSB to DSB are surprisingly low at 10 eV (~4.3) at both salt concentrations, and comparable to the ratios measured with 100 eV electrons. At all characteristic electron energies, the yields of SSB and DSB are found to be higher for the DNA having the lowest salt concentration. However, the organic salts are more efficient at protecting DNA against the damage induced by 1 and 10 eV electrons. DNA damage and protection by organic ions are discussed in terms of mechanisms operative at each electron energy. It is suggested that these ions create additional electric fields within the groove of DNA, which modify the resonance parameter of 1 and 10 eV electrons, namely, by reducing the electron capture cross-section of basic DNA units and the lifetime of corresponding transient anions. An interstrand electron transfer mechanism is proposed to explain the low ratios for the yields of SSB to those of DSB produced by 10 eV electrons. PMID:20969428

Thermal detection of single e-h pairs in a biased silicon crystal detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romani, R. K.; Brink, P. L.; Cabrera, B.

We demonstrate that individual electron-hole pairs are resolved in a 1 cm 2 by 4 mm thick silicon crystal (0.93 g) operated at ~35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e –h +) pair in the crystal near the grid. The energy of the drifting charges is measured withmore » a phonon sensor noise σ ~0.09 e – h + pair. In conclusion, the observed charge quantization is nearly identical for h +s or e –s transported across the crystal.« less

Efficient Auger Charge-Transfer Processes in ZnO

NASA Astrophysics Data System (ADS)

Stehr, J. E.; Chen, S. L.; Svensson, B. G.; Buyanova, I. A.; Chen, W. M.

2018-05-01

Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labeled as NBX) in electron-irradiated ZnO. Even though the energy position of the NBX line is close to that for bound excitons in ZnO, it has distinctively different magneto-optical properties. Photoelectron paramagnetic resonance measurements reveal a connection and a charge-transfer process involving NBX and Fe and Al centers. The experimental results are explained within a model which assumes that the NBX is a neutral donor bound exciton at a defect center located near a Fe impurity and an Auger-type charge-transfer process occurs between NBX and Fe3 + . While the NBX dissociates, its hole is captured by an excited state of Fe3 + and the released energy is transferred to the NBX electron, which is excited to the conduction band and subsequently trapped by a substitutional AlZn shallow donor.

Thermal detection of single e-h pairs in a biased silicon crystal detector

DOE PAGES

Romani, R. K.; Brink, P. L.; Cabrera, B.; ...

2018-01-23

We demonstrate that individual electron-hole pairs are resolved in a 1 cm 2 by 4 mm thick silicon crystal (0.93 g) operated at ~35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e –h +) pair in the crystal near the grid. The energy of the drifting charges is measured withmore » a phonon sensor noise σ ~0.09 e – h + pair. In conclusion, the observed charge quantization is nearly identical for h +s or e –s transported across the crystal.« less

Thermal detection of single e-h pairs in a biased silicon crystal detector

NASA Astrophysics Data System (ADS)

Romani, R. K.; Brink, P. L.; Cabrera, B.; Cherry, M.; Howarth, T.; Kurinsky, N.; Moffatt, R. A.; Partridge, R.; Ponce, F.; Pyle, M.; Tomada, A.; Yellin, S.; Yen, J. J.; Young, B. A.

2018-01-01

We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ˜35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ˜0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.

Revisiting the Bohr Atom 100 Years Later

NASA Astrophysics Data System (ADS)

Wall, Ernst

2013-03-01

We use a novel electron model wherein the electron is modeled as a point charge behaving as a trapped photon revolving in a Compton wavelength orbit at light speed. The revolving point charge gives rise to spiraling Compton wavelets around the electron, which give rise to de Broglie waves. When applied to the Bohr model, the orbital radius of the electron scales to the first Bohr orbit's radius via the fine structure constant. The orbiting electron's orbital velocity, Vb, scales to that of the electron's charge's internal velocity (the velocity of light, c) via the fine structure constant. The Compton wavelets, if they reflect off the nucleus, have a round trip time just long enough to allow the electron to move one of its diameters in distance in the first Bohr orbit. The ratio of the electron's rotational frequency, fe, to its rotational frequency in the Bohr orbit fb, is fe/fb = 1/α2, which is also the number of electron rotations in single orbit. If we scale the electron's rotational energy (h*fe) to that of the orbit using this, the orbital energy value (h*fb) would be 27.2114 eV. However, the virial theorem reduces it to 13.6057, the ground state energy of the first Bohr orbit. Ref: www.tachyonmodel.com.

Energy of charged states in the acetanilide crystal: Trapping of charge-transfer states at vacancies as a possible mechanism for optical damage

NASA Astrophysics Data System (ADS)

Tsiaousis, D.; Munn, R. W.

2004-04-01

Calculations for the acetanilide crystal yield the effective polarizability (16.6 Å3), local electric field tensor, effective dipole moment (5.41 D), and dipole-dipole energy (-12.8 kJ/mol). Fourier-transform techniques are used to calculate the polarization energy P for a single charge in the perfect crystal (-1.16 eV); the charge-dipole energy WD is zero if the crystal carries no bulk dipole moment. Polarization energies for charge-transfer (CT) pairs combine with the Coulomb energy EC to give the screened Coulomb energy Escr; screening is nearly isotropic, with Escr≈EC/2.7. For CT pairs WD reduces to a term δWD arising from the interaction of the charge on each ion with the change in dipole moment on the other ion relative to the neutral molecule. The dipole moments calculated by density-functional theory methods with the B3LYP functional at the 6-311++G** level are 3.62 D for the neutral molecule, changing to 7.13 D and 4.38 D for the anion and cation, relative to the center of mass. Because of the large change in the anion, δWD reaches -0.9 eV and modifies the sequence of CT energies markedly from that of Escr, giving the lowest two CT pairs at -1.98 eV and -1.41 eV. The changes in P and WD near a vacancy are calculated; WD changes for the individual charges because the vacancy removes a dipole moment and modifies the crystal dielectric response, but δWD and EC do not change. A vacancy yields a positive change ΔP that scatters a charge or CT pair, but the change ΔWD can be negative and large enough to outweigh ΔP, yielding traps with depths that can exceed 150 meV for single charges and for CT pairs. Divacancies yield traps with depths nearly equal to the sum of those produced by the separate vacancies and so they can exceed 300 meV. These results are consistent with a mechanism of optical damage in which vacancies trap optically generated CT pairs that recombine and release energy; this can disrupt the lattice around the vacancy, thereby favoring trapping and recombination of CT pairs generated by subsequent photon absorption, leading to further lattice disruption. Revisions to previous calculations on trapping of CT pairs in anthracene are reported.

Anhydrous crystals of DNA bases are wide gap semiconductors.

PubMed

Maia, F F; Freire, V N; Caetano, E W S; Azevedo, D L; Sales, F A M; Albuquerque, E L

2011-05-07

We present the structural, electronic, and optical properties of anhydrous crystals of DNA nucleobases (guanine, adenine, cytosine, and thymine) found after DFT (Density Functional Theory) calculations within the local density approximation, as well as experimental measurements of optical absorption for powders of these crystals. Guanine and cytosine (adenine and thymine) anhydrous crystals are predicted from the DFT simulations to be direct (indirect) band gap semiconductors, with values 2.68 eV and 3.30 eV (2.83 eV and 3.22 eV), respectively, while the experimentally estimated band gaps we have measured are 3.83 eV and 3.84 eV (3.89 eV and 4.07 eV), in the same order. The electronic effective masses we have obtained at band extremes show that, at low temperatures, these crystals behave like wide gap semiconductors for electrons moving along the nucleobases stacking direction, while the hole transport are somewhat limited. Lastly, the calculated electronic dielectric functions of DNA nucleobases crystals in the parallel and perpendicular directions to the stacking planes exhibit a high degree of anisotropy (except cytosine), in agreement with published experimental results.

Measurements of density dependent intensity ratios of extreme ultraviolet line emission from Fe X, XI, and XII

NASA Astrophysics Data System (ADS)

Shimizu, Erina; Ali, Safdar; Tsuda, Takashi; Sakaue, Hiroyuki A.; Kato, Daiji; Murakami, Izumi; Hara, Hirohisa; Watanabe, Tetsuya; Nakamura, Nobuyuki

2017-05-01

We report high-resolution density dependent intensity ratio measurements for middle charge states of iron in the extreme ultraviolet (EUV) spectral wavelength range of 160-200 Å. The measurements were performed at the Tokyo EBIT laboratory by employing a flat-field grazing incidence spectrometer installed on a low energy compact electron beam ion trap. The intensity ratios for several line pairs stemming from Fe X, Fe XI and Fe XII were extracted from spectra collected at the electron beam energies of 340 and 400 eV by varying the beam current between 7.5 and 12 mA at each energy. In addition, the effective electron densities were obtained experimentally by imaging the electron beam profile and ion cloud size with a pinhole camera and visible spectrometer, respectively. In this paper, the experimental results are compared with previous data from the literature and with the present calculations performed using a collisional-radiative model. Our experimental results show a rather good agreement with the calculations and previous reported results.

Electrical properties of grain boundaries and dislocations in crystalline silicon: Influence of impurity incorporation and hydrogenation

NASA Astrophysics Data System (ADS)

Park, Yongkook

This thesis examines the electrical properties of grain boundaries (GBs) and dislocations in crystalline silicon. The influence of impurity incorporation and hydrogenation on the electrical properties of grain boundaries , as well as the electrical activity of impurity decorated dislocations and the retention of impurities at dislocations at high temperatures have been investigated. The electrical properties of Si GB were examined by C-V, J-V , and capacitance transient methods using aluminum/Si(100)/Si(001) junctions. First, the density of states and the carrier capture cross-sections of the clean GB were evaluated by C-V/J-V analyses. The density of GB states was determined as 4.0x1012 cm-2eV -1. It was found that the states close to the valance band edge have relatively smaller hole capture cross sections than those at higher energy position, and electron capture cross sections are at least two or three orders larger than the corresponding hole capture cross sections. Secondly, the influence of iron contamination and hydrogenation following iron contamination on the electrical properties of (110)/(001) Si GB was characterized by a capacitance transient technique. Compared with the clean sample, iron contamination increased both the density of states by at least three times and the zero-bias barrier height by 70 meV, while reducing by two orders of magnitude the electron/hole capture cross-section ratio. Hydrogenation following iron contamination led to the reduction of the density of Fe-decorated GB states, which was increased to over 2x1013 cm-2eV-1 after iron contamination, to ˜1x1013 cm-2 eV-1 after hydrogenation treatment. The increased zero-bias GB energy barrier due to iron contamination was reversed as well by hydrogen treatment. The density of GB states before and after hydrogenation was evaluated by J-V, C-V and capacitance transient methods using gold/direct-silicon-bonded (DSB) (110) thin silicon top layer/(100) silicon substrate junctions. The GB potential energy barrier in thermal equilibrium was reduced by 70 meV. Whereas the clean sample had a density of GB states of ˜6x1012 cm-2eV-1 in the range of Ev+0.54˜0.64 eV, hydrogenation reduced the density of GB states to ˜9x1011 cm-2eV -1 in the range of Ev+0.56˜0.61 eV, which is about a seven-fold reduction from that of the clean sample. Segregation and thermal dissociation kinetics of hydrogen at a large-angle general GB in crystalline silicon have been investigated using deuterium as a readily identifiable isotope which duplicates hydrogen chemistry. Segregation or trapping of deuterium (hydrogen) introduced was found to take place at (110)/(001) Si GB. The segregation coefficient (k) of deuterium (hydrogen) at GB was determined as k≈24+/-3 at 100°C. Thermal dissociation of deuterium (hydrogen) from GB obeyed first-order kinetics with an activation energy of ˜1.62 eV. The electrical activities of dislocations in a SiGe/Si heterostructure were examined by deep level transient spectroscopy (DLTS) after iron contamination and phosphorous diffusion gettering. DLTS of iron contaminated samples revealed a peak at 210 K, which was assigned to individual iron atoms or very small (<2 nm) precipitates decorated along dislocations. Arrhenius plot of the 210 K peak yielded a hole capture cross section of 2.4x10-14 cm2 and an energy level of 0.42 eV above the valance band. DLTS of the iron contaminated sample revealed that 6x10 14 cm-3 of boron can more effectively trap interstitial iron at room temperature than the strain field/defect sites at 107 ˜108 cm-2 dislocations. Phosphorous diffusion experiments revealed that the gettering efficiency of iron impurities depends on the dislocation density. For regions of high dislocation density, phosphorous diffusion cannot remove all iron impurities decorated at dislocations, suggesting a strong binding of iron impurities at dislocation core defects.

Low-energy electron collisions with proline and pyrrolidine: A comparative study

NASA Astrophysics Data System (ADS)

Barbosa, Alessandra Souza; Freitas, Thiago Corrêa; Bettega, M. H. F.

2018-02-01

We present a comparative study on the calculated cross sections obtained for the elastic collisions of low-energy electrons with the amino acid proline (C5H9NO2) and its building block pyrrolidine (C4H9N). We employed the Schwinger multichannel method implemented with pseudopotentials to compute integral, differential, and momentum transfer cross sections in the static-exchange plus polarization approximation, for energies up to 15 eV. We report three shape resonances for proline at around 1.7 eV, 6.8 eV, and 10 eV and two shape resonances for pyrrolidine centered at 7 eV and 10.2 eV. The present resonance energies are compared with available experimental data on vertical attachment energies and dissociative electron attachment, where a good agreement is found. From the comparison of the present results with available calculated cross sections for the simplest carboxylic acid, formic acid (HCOOH), and from electronic structure calculations, we found that the first resonance of proline, at 1.7 eV, is due the presence of the carboxylic group, whereas the other two structures, at 6.8 eV and 10 eV, clearly arise from the pyrrolidine ring. A comparison between the differential cross sections for proline and pyrrolidine at some selected energies of the incident electron is also reported in this paper.

Low dimensional CH3NH3PbBr3 cubes for persistent luminescence: Energy variation of electron excitation

NASA Astrophysics Data System (ADS)

Besral, N.; Paul, T.; Thakur, S.; Sarkar, S.; Sardar, K.; Chanda, K.; Das, A.; Chattopadhyay, K. K.

2018-04-01

The impact of varying electron beam voltage upon room temperature CL (cathodoluminescence) properties of crystalline organic-inorganic lead halide perovskite CH3NH3PbBr3 (Methylammonium lead tribromide) microcubes have been studied. CH3NH3PbBr3 microcubes were synthesized at room temperature by a very straight forward wet chemical route. After preliminary characterizations like XRD (X-ray diffraction), FESEM (Field emission scanning electron microscopy), UV-Vis spectroscopy, CL study at three different beam voltages i.e. 5 kV, 10 kV and 15 kV respectively was performed at room temperature. Prominent emission signals were obtained with emission peaks at 2.190 eV (FWHM 0.120 eV), 2.222 eV (FWHM 0.108 eV) and 2.242 eV (FWHM 0.095 eV) for electron beam voltages 5 kV, 10 kV and 15 kV respectively.

Rapid crystallization of externally produced ions in a Penning trap

NASA Astrophysics Data System (ADS)

Murböck, T.; Schmidt, S.; Birkl, G.; Nörtershäuser, W.; Thompson, R. C.; Vogel, M.

2016-10-01

We have studied the cooling dynamics, formation process, and geometric structure of mesoscopic crystals of externally produced magnesium ions in a Penning trap. We present a cooling model and measurements for a combination of buffer gas cooling and laser cooling which has been found to reduce the ion kinetic energy by eight orders of magnitude from several hundreds of eV to μ eV and below within seconds. With ion numbers of the order of 1 ×103 to 1 ×105 , such cooling leads to the formation of ion Coulomb crystals which display a characteristic shell structure in agreement with the theory of non-neutral plasmas. We show the production and characterization of two-species ion crystals as a means of sympathetic cooling of ions lacking a suitable laser-cooling transition.

Electron Dynamics Within the Electron Diffusion Region of Asymmetric Reconnection

NASA Astrophysics Data System (ADS)

Argall, M. R.; Paulson, K.; Alm, L.; Rager, A.; Dorelli, J.; Shuster, J.; Wang, S.; Torbert, R. B.; Vaith, H.; Dors, I.; Chutter, M.; Farrugia, C.; Burch, J.; Pollock, C.; Giles, B.; Gershman, D.; Lavraud, B.; Russell, C. T.; Strangeway, R.; Magnes, W.; Lindqvist, P.-A.; Khotyaintsev, Yu. V.; Ergun, R. E.; Ahmadi, N.

2018-01-01

We investigate the agyrotropic nature of electron distribution functions and their substructure to illuminate electron dynamics in a previously reported electron diffusion region (EDR) event. In particular, agyrotropy is examined as a function of energy to reveal detailed finite Larmor radius effects for the first time. It is shown that the previously reported ˜66 eV agyrotropic "crescent" population that has been accelerated as a result of reconnection is evanescent in nature because it mixes with a denser, gyrotopic background. Meanwhile, accelerated agyrotropic populations at 250 and 500 eV are more prominent because the background plasma at those energies is more tenuous. Agyrotropy at 250 and 500 eV is also more persistent than at 66 eV because of finite Larmor radius effects; agyrotropy is observed 2.5 ion inertial lengths from the EDR at 500 eV, but only in close proximity to the EDR at 66 eV. We also observe linearly polarized electrostatic waves leading up to and within the EDR. They have wave normal angles near 90°, and their occurrence and intensity correlate with agyrotropy. Within the EDR, they modulate the flux of 500 eV electrons travelling along the current layer. The net electric field intensifies the reconnection current, resulting in a flow of energy from the fields into the plasma.

A temperature dependent study on charge dynamics in organic molecular device: Effect of shallow traps on space charge limited behavior

NASA Astrophysics Data System (ADS)

Mukherjee, A. K.; Kavala, A. K.

2014-04-01

Shallow traps play a significant role in influencing charge dynamics through organic molecular thin films, such as pentacene. Sandwich cells of pentacene capped by gold electrodes are an excellent specimen to study the nature of underlying charge dynamics. In this paper, self-consistent numerical simulation of I-V characteristics is performed at various temperatures. The results have revealed negative value of Poole Frenkel coefficient. The location of trap energy level is found to be located at 0.24 eV above the highest occupied molecular orbit (HOMO) level of pentacene. Other physical parameters related to trap levels, such as density of states due to traps and effective carrier density due to traps, have also been estimated in this study.

Efficient injection of an intense positron beam into a dipole magnetic field

NASA Astrophysics Data System (ADS)

Saitoh, H.; Stanja, J.; Stenson, E. V.; Hergenhahn, U.; Niemann, H.; Pedersen, T. Sunn; Stoneking, M. R.; Piochacz, C.; Hugenschmidt, C.

2015-10-01

We have demonstrated efficient injection and trapping of a cold positron beam in a dipole magnetic field configuration. The intense 5 eV positron beam was provided by the NEutron induced POsitron source MUniCh facility at the Heinz Maier-Leibnitz Zentrum, and transported into the confinement region of the dipole field trap generated by a supported, permanent magnet with 0.6 T strength at the pole faces. We achieved transport into the region of field lines that do not intersect the outer wall using the {E}× {B} drift of the positron beam between a pair of tailored plates that created the electric field. We present evidence that up to 38% of the beam particles are able to reach the intended confinement region and make at least a 180° rotation around the magnet where they annihilate on an insertable target. When the target is removed and the {E}× {B} plate voltages are switched off, confinement of a small population persists for on the order of 1 ms. These results lend optimism to our larger aims to apply a magnetic dipole field configuration for trapping of both positrons and electrons in order to test predictions of the unique properties of a pair plasma.

Electron heated target temperature measurements in petawatt laser experiments based on extreme ultraviolet imaging and spectroscopy.

PubMed

Ma, T; Beg, F N; MacPhee, A G; Chung, H-K; Key, M H; Mackinnon, A J; Patel, P K; Hatchett, S; Akli, K U; Stephens, R B; Chen, C D; Freeman, R R; Link, A; Offermann, D T; Ovchinnikov, V; Van Woerkom, L D

2008-10-01

Three independent methods (extreme ultraviolet spectroscopy, imaging at 68 and 256 eV) have been used to measure planar target rear surface plasma temperature due to heating by hot electrons. The hot electrons are produced by ultraintense laser-plasma interactions using the 150 J, 0.5 ps Titan laser. Soft x-ray spectroscopy in the 50-400 eV region and imaging at the 68 and 256 eV photon energies give a planar deuterated carbon target rear surface pre-expansion temperature in the 125-150 eV range, with the rear plasma plume averaging a temperature approximately 74 eV.

Low-energy (<20 eV) and high-energy (1000 eV) electron-induced methanol radiolysis of astrochemical interest

NASA Astrophysics Data System (ADS)

Sullivan, Kristal K.; Boamah, Mavis D.; Shulenberger, Katie E.; Chapman, Sitara; Atkinson, Karen E.; Boyer, Michael C.; Arumainayagam, Christopher R.

2016-07-01

We report the first infrared study of the low-energy (<20 eV) electron-induced reactions of condensed methanol. Our goal is to simulate processes which occur when high-energy cosmic rays interact with interstellar and cometary ices, where methanol, a precursor of several prebiotic species, is relatively abundant. The interactions of high-energy radiation, such as cosmic rays (Emax ˜ 1020 eV), with matter produce large numbers of low-energy secondary electrons, which are known to initiate radiolysis reactions in the condensed phase. Using temperature programmed desorption (TPD) and infrared reflection absorption spectroscopy (IRAS), we have investigated low-energy (5-20 eV) and high-energy (˜1000 eV) electron-induced reactions in condensed methanol (CH3OH). IRAS has the benefit that it does not require thermal processing prior to product detection. Using IRAS, we have found evidence for the formation of ethylene glycol (HOCH2CH2OH), formaldehyde (CH2O), dimethyl ether (CH3OCH3), methane (CH4), carbon dioxide (CO2), carbon monoxide (CO), and the hydroxyl methyl radical (·CH2OH) upon both low-energy and high-energy electron irradiation of condensed methanol at ˜85 K. Additionally, TPD results, presented herein, are similar for methanol films irradiated with both 1000 eV and 20 eV electrons. These IRAS and TPD findings are qualitatively consistent with the hypothesis that high-energy condensed phase radiolysis is mediated by low-energy electron-induced reactions. Moreover, methoxymethanol (CH3OCH2OH) could serve as a tracer molecule for electron-induced reactions in the interstellar medium. The results of experiments such as ours may provide a fundamental understanding of how complex organic molecules are synthesized in cosmic ices.

Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

NASA Astrophysics Data System (ADS)

Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

2016-05-01

This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

Mode Transitions in Hall Effect Thrusters

DTIC Science & Technology

2013-07-01

bM = number of pixels per bin m = spoke order 0m = spoke order m = 0 em = electron mass, 9.1110 -31 kg im = Xe ion mass, 2.18×10 -25...periodogram spectral estimate, Arb Hz -1 eT = electron temperature eT = electron temperature parallel to magnetic field, eV eT  = electron ...Fourier transform of x(t)  = inverse angle from 2D DFT, deg-1  = mean electron energy, eV * = material dependent cross-over energy, eV xy

Search for the Antineutrino rest mass in the tritium beta decay

NASA Astrophysics Data System (ADS)

Lobashev, V. M.

Status and results of the tritium beta spectrum measurement on the “Troitsk ν-mass” set-up are discussed. Measurements carried out in 1994 to 1997 provided the lowest upper limit for electron antineutrino rest mass in the direct kinematics approach. Analysis of the spectrum revealed a narrow (less than 5 eV wide) bump-like structure located 5 to 12 eV below the end point with integral intensity ∼ 7·10 -11 of the total decay rate. A specific feature of this structure proved to be a drift of the position of the bump during 3 years of measurement. No other visible anomalies in the measured part of the spectrum were found after introduction of a correction for an effect of electron trapping in the source. After accounting for the bump, the shape of the whole measured part of the beta spectrum agrees with zero mν2, thus eliminating the problem of “negative mν2”. The combined result of the 94 and 96 runs without the 97 run data is: m ν2=1.5±5.9 stat±3.6 syst{eV 2}/{C 4} From here most conservative limit for the neutrino mass is: m ν < 3.8 {eV}/{c 2} at 95 % C.L. A new type of differential spectrometer, based on adiabatisity principle is proposed.

Temperature Dependent Surface Structures and Electronic Properties of Organic-Inorganic Hybrid Perovskite Single Crystals

NASA Astrophysics Data System (ADS)

Jao, M.-H.; Teague, M. L.; Huang, J.-S.; Tseng, W.-S.; Yeh, N.-C.

Organic-inorganic hybrid perovskites, arising from research of low-cost high performance photovoltaics, have become promising materials not only for solar cells but also for various optoelectronic and spintronic applications. An interesting aspect of the hybrid perovskites is that their material properties, such as the band gap, can be easily tuned by varying the composition, temperature, and the crystalline phases. Additionally, the surface structure is critically important for their optoelectronic applications. It is speculated that different crystalline facets could show different trap densities, thus resulting in microscopically inhomogeneous performance. Here we report direct studies of the surface structures and electronic properties of hybrid perovskite CH3NH3PbI3 single crystals by scanning tunneling microscopy and spectroscopy (STM/STS). We found long-range spatially homogeneous tunneling conductance spectra with a well-defined energy gap of (1.55 +/- 0.1) eV at 300 K in the tetragonal phase, suggesting high quality of the single crystals. The energy gap increased to (1.81 +/- 0.1) eV in the orthorhombic phase, below the tetragonal-to-orthorhombic phase transition temperature at 150 K. Detailed studies of the temperature evolution in the spatially resolved surface structures and local density of states will be discussed to elucidate how these properties may influence the optoelectronic performance of the hybrid perovskites. We thank the support from NTU in Taiwan and from NSF in the US.

Electron impact excitation of the electronic states of N2. III - Transitions in the 12.5-14.2-eV energy-loss region at incident energies of 40 and 60 eV

NASA Technical Reports Server (NTRS)

Chutjian, A.; Trajmar, S.; Cartwright, D. C.

1977-01-01

Analysis of electron energy-loss data at incident electron energies of 40 and 60 eV has led to the determination of normalized absolute differential cross sections for electron-impact excitation of five optically-allowed singlet states, two known triplet states, and two unknown triplet-like states of N2, lying in the energy-loss range 12.5-14.2 eV. The range of scattering angles was 5 to 138 deg. The optically allowed transitions and the known triplet excitations are identified. Cross sections for excitation to two unidentified triplet-like states at 13.155 and 13.395 eV were also obtained. The relationship of the generalized oscillator strength for the dipole-allowed states obtained from the described data to known optical oscillator strengths is discussed.

Ab initio molecular dynamics calculations on scattering of hyperthermal H atoms from Cu(111) and Au(111).

PubMed

Kroes, Geert-Jan; Pavanello, Michele; Blanco-Rey, María; Alducin, Maite; Auerbach, Daniel J

2014-08-07

Energy loss from the translational motion of an atom or molecule impinging on a metal surface to the surface may determine whether the incident particle can trap on the surface, and whether it has enough energy left to react with another molecule present at the surface. Although this is relevant to heterogeneous catalysis, the relative extent to which energy loss of hot atoms takes place to phonons or electron-hole pair (ehp) excitation, and its dependence on the system's parameters, remain largely unknown. We address these questions for two systems that present an extreme case of the mass ratio of the incident atom to the surface atom, i.e., H + Cu(111) and H + Au(111), by presenting adiabatic ab initio molecular dynamics (AIMD) predictions of the energy loss and angular distributions for an incidence energy of 5 eV. The results are compared to the results of AIMDEFp calculations modeling energy loss to ehp excitation using an electronic friction ("EF") model applied to the AIMD trajectories, so that the energy loss to the electrons is calculated "post" ("p") the computation of the AIMD trajectory. The AIMD calculations predict average energy losses of 0.38 eV for Cu(111) and 0.13-0.14 eV for Au(111) for H-atoms that scatter from these surfaces without penetrating the surface. These energies closely correspond with energy losses predicted with Baule models, which is suggestive of structure scattering. The predicted adiabatic integral energy loss spectra (integrated over all final scattering angles) all display a lowest energy peak at an energy corresponding to approximately 80% of the average adiabatic energy loss for non-penetrative scattering. In the adiabatic limit, this suggests a way of determining the approximate average energy loss of non-penetratively scattered H-atoms from the integral energy loss spectrum of all scattered H-atoms. The AIMDEFp calculations predict that in each case the lowest energy loss peak should show additional energy loss in the range 0.2-0.3 eV due to ehp excitation, which should be possible to observe. The average non-adiabatic energy losses for non-penetrative scattering exceed the adiabatic losses to phonons by 0.9-1.0 eV. This suggests that for scattering of hyperthermal H-atoms from coinage metals the dominant energy dissipation channel should be to ehp excitation. These predictions can be tested by experiments that combine techniques for generating H-atom beams that are well resolved in translational energy and for detecting the scattered atoms with high energy-resolution.

Studies of Copper, Silver, and Gold Cluster Anions: Evidence of Electronic Shell Structure.

NASA Astrophysics Data System (ADS)

Pettiette, Claire Lynn

A new Ultraviolet Magnetic Time-of-Flight Photoelectron Spectrometer (MTOFPES) has been developed for the study of the electronic structure of clusters produced in a pulsed supersonic molecular beam. This is the first technique which has been successful in probing the valence electronic states of metal clusters. The ultraviolet photoelectron spectra of negative cluster ions of the noble metals have been taken at several different photon energies. These are presented along with the electron affinity and HOMO-LUMO gap measurements for Cu_6^- to Cu_ {41}^-, using 4.66 eV and 6.42 eV detachment energies; Ag_3^- to Ag_{21}^-, using 6.42 eV detachment energy; and Au_3^ - to Au_{21}^-, using 6.42 eV and 7.89 eV detachment energies. The spectra provide the first detailed probes of the s valence electrons of the noble metal clusters. In addition, the 6.42 eV and 7.89 eV spectra probe the first one to two electron volts of the molecular orbitals of the d valence electrons of copper and gold clusters. The electron affinity and HOMO-LUMO gap measurements of the noble metal clusters agree with the predictions of the ellipsoidal shell model for mono-valent metal clusters. In particular, cluster numbers 8, 20, and 40--which correspond to the spherical shell closings of this model--have low electron affinities and large HOMO-LUMO gaps. The spectra of the gold cluster ions indicate that the molecular orbital energies of the cluster valence electrons are more widely spaced for gold than for copper or silver. This is to be expected for the heavy atom clusters when relativistic effects are taken into account.

Effects of oxidization and deoxidization on charge-propagation dynamics in rare-earth-doped titanium dioxide with room-temperature luminescence

NASA Astrophysics Data System (ADS)

Ishii, Masashi; Towlson, Brian; Poolton, Nigel; Harako, Susumu; Zhao, Xinwei; Komuro, Shuji; Hamilton, Bruce

2012-03-01

Anatase titanium dioxide (A-TiO2) with a wide band-gap energy of 3.2 eV can be used as a host semiconductor of rare-earth dopants for optical devices. However, the chemical activity of A-TiO2 strongly affects the luminescence properties of the devices. In this study, we analyzed oxidized and deoxidized samarium (Sm)-doped A-TiO2 (TiO2:Sm) by impedance spectroscopy and microscopic photoluminescence. Charge propagation analyses using dielectric relaxation (DR) revealed that different kinds of charge-trapping centers were formed by the oxidization and deoxidization. For oxidization, Sm-oxygen complexes incorporated in the A-TiO2 formed a trapping level that contributed to Sm excitation, while defective complexes at the A-TiO2 boundary formed other levels that dissipated the charges. For deoxidization using thermal treatment in a hydrogen (H) atmosphere, the number of profitable trapping centers in A-TiO2 was reduced but the remainder maintained the property of Sm excitation. It was also found that H adsorption on the A-TiO2 boundary delocalized the electrons. Photoexcited dielectric relaxation (PEDR) studies confirmed the charge recombination at the profitable traps, and the peak height of the spectra corresponded to the luminescence intensity. Microscopic photoluminescence studies provided results consistent with DR and PEDR measurements and also revealed another quenching factor, i.e., Ti2O3 microcrystal formation on the TiO2:Sm surface.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Electron Resonance Decay into a Biological Function: Decrease in Viability of E. coli Transformed by Plasmid DNA Irradiated with 0.5-18 eV Electrons.

PubMed

Kouass Sahbani, S; Cloutier, P; Bass, A D; Hunting, D J; Sanche, L

2015-10-01

Transient negative ions (TNIs) are ubiquitous in electron-molecule scattering at low electron impact energies (0-20 eV) and are particularly effective in damaging large biomolecules. Because ionizing radiation generates mostly 0-20 eV electrons, TNIs are expected to play important roles in cell mutagenesis and death during radiotherapeutic cancer treatment, although this hypothesis has never been directly verified. Here, we measure the efficiency of transforming E. coli bacteria by inserting into the cells, pGEM-3ZfL(-) plasmid DNA that confers resistance to the antibiotic ampicillin. Before transformation, plasmids are irradiated with electrons of specific energies between 0.5 and 18 eV. The loss of transformation efficiency plotted as a function of irradiation energy reveals TNIs at 5.5 and 9.5 eV, corresponding to similar states observed in the yields of DNA double strand breaks. We show that TNIs are detectable in the electron-energy dependence of a biological process and can decrease cell viability.

Molecular cascade Auger decays following Si KL23L23 Auger transitions in SiCl4

NASA Astrophysics Data System (ADS)

Suzuki, I. H.; Bandoh, Y.; Mochizuki, T.; Fukuzawa, H.; Tachibana, T.; Yamada, S.; Takanashi, T.; Ueda, K.; Tamenori, Y.; Nagaoka, S.

2016-08-01

Cascade Si LVV Auger electron spectra at the photoexcitation of the Si 1s electron in a SiCl4 molecule have been measured using an electron spectrometer combined with monochromatized undulator radiation. In the instance of the resonant excitation of the Si 1s electron into the vacant molecular orbital a peak with high yield is observed at about 106 eV, an energy considerably higher than the energies of the normal LVV Auger electron. This peak is presumed to originate from the participator decay from the state with two 2p holes and one excited electron into the state with one 2p hole and one valence hole. Following the normal KL23L23 Auger transition, the cascade spectrum shows several peak structures, e.g. 63 eV, 76 eV and 91 eV. The peak at 91 eV is probably assigned to the second step Auger decay into states having a 2p hole together with two valence holes. These findings are similar to experimental results of SiF4. The former two peaks (63 eV and 76 eV) are ascribed to Auger transitions of Si atomic ions produced through molecular ion dissociation after the first step cascade decays, although the peak heights of atomic ions are lower than those of SiF4.

Reversible photo-induced trap formation in mixed-halide hybrid perovskites for photovoltaics.

PubMed

Hoke, Eric T; Slotcavage, Daniel J; Dohner, Emma R; Bowring, Andrea R; Karunadasa, Hemamala I; McGehee, Michael D

2015-01-01

We report on reversible, light-induced transformations in (CH 3 NH 3 )Pb(Br x I 1- x ) 3 . Photoluminescence (PL) spectra of these perovskites develop a new, red-shifted peak at 1.68 eV that grows in intensity under constant, 1-sun illumination in less than a minute. This is accompanied by an increase in sub-bandgap absorption at ∼1.7 eV, indicating the formation of luminescent trap states. Light soaking causes a splitting of X-ray diffraction (XRD) peaks, suggesting segregation into two crystalline phases. Surprisingly, these photo-induced changes are fully reversible; the XRD patterns and the PL and absorption spectra revert to their initial states after the materials are left for a few minutes in the dark. We speculate that photoexcitation may cause halide segregation into iodide-rich minority and bromide-enriched majority domains, the former acting as a recombination center trap. This instability may limit achievable voltages from some mixed-halide perovskite solar cells and could have implications for the photostability of halide perovskites used in optoelectronics.

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

NASA Astrophysics Data System (ADS)

Arslan, Engin; Bütün, Serkan; Şafak, Yasemin; Ozbay, Ekmel

2010-12-01

We present a systematic study on the admittance characterization of surface trap states in unpassivated and SiN x -passivated Al0.83In0.17N/AlN/GaN heterostructures. C- V and G/ ω- V measurements were carried out in the frequency range of 1 kHz to 1 MHz, and an equivalent circuit model was used to analyze the experimental data. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming models in which traps are located at the metal-AlInN surface. The density ( D t) and time constant ( τ t) of the surface trap states have been determined as a function of energy separation from the conduction-band edge ( E c - E t). The D st and τ st values of the surface trap states for the unpassivated samples were found to be D_{{st}} \\cong (4 - 13) × 10^{12} {eV}^{ - 1} {cm}^{ - 2} and τ st ≈ 3 μs to 7 μs, respectively. For the passivated sample, D st decreased to 1.5 × 10^{12} {eV}^{ - 1} {cm}^{ - 2} and τ st to 1.8 μs to 2 μs. The density of surface trap states in Al0.83In0.17N/AlN/GaN heterostructures decreased by approximately one order of magnitude with SiN x passivation, indicating that the SiN x insulator layer between the metal contact and the surface of the Al0.83In0.17N layer can passivate surface states.

The electronic states of cyclopropane studied by VUV absorption and electron energy-loss spectroscopies

NASA Astrophysics Data System (ADS)

Gingell, M.; Mason, N. J.; Walker, I. C.; Marston, G.; Zhao, H.; Siggel, M. R. F.

1999-06-01

Absolute optical (VUV) absorption cross sections for cyclopropane have been measured from 5.0 to 11.2 and 20-40 eV using synchrotron radiation. Also, electron energy-loss (EEL) spectra have been obtained using incident electrons of (a) 150 eV energy scattered through small angles (energy loss 5.0-15 eV) and (b) near-threshold energies scattered through large angles (energy loss 0-10.5 eV). Taken together these confirm that the low-lying excited electronic states of cyclopropane are of Rydberg type and, although spectral bands are diffuse, a known Rydberg series has been extended. Recent computations (Galasso V 1996 Chem. Phys. 206 289) appear to give a good account of the experimental spectrum from threshold to about 11 eV, but these must be extended if valence-excited states are to be characterized. Particular attention has been directed at the evaluation of absolute optical cross sections. These are now believed to be established over the energy ranges 5-15 and 20-40 eV. In the gap region (15-20 eV) second-order radiation may affect the optical measurements. From consideration of second-order effects, and comparison of the present studies with earlier measurements, we propose a best-estimate cross section in this energy region also.

Energy distributions of H{sup +} fragments ejected by fast proton and electron projectiles in collision with H{sub 2}O molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barros, A. L. F. de; Lecointre, J.; Luna, H.

Experimental measurements of the kinetic energy distribution spectra of H{sup +} fragment ions released during radiolysis of water molecules in collision with 20, 50, and 100 keV proton projectiles and 35, 200, 400, and 1000 eV electron projectiles are reported using a pulsed beam and drift tube time-of-flight based velocity measuring technique. The spectra show that H{sup +} fragments carrying a substantial amount of energy are released, some having energies well in excess of 20 eV. The majority of the ions lie within the 0-5 eV energy range with the proton spectra showing an almost constant profile between 1.5 andmore » 5 eV and, below this, increasing gradually with decreasing ejection energy up to the near zero energy value while the electron spectra, in contrast, show a broad maximum between 1 and 3 eV and a pronounced dip around 0.25 eV. Beyond 5 eV, both projectile spectra show a decreasing profile with the electron spectra decreasing far more rapidly than the proton spectra. Our measured spectra thus indicate that major differences are present in the collision dynamics between the proton and the electron projectiles interacting with gas phase water molecules.« less

Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

NASA Astrophysics Data System (ADS)

Lechaux, Y.; Fadjie, A.; Bollaert, S.; Talbo, V.; Mateos, J.; González, T.; Vasallo, B. G.; Wichmann, N.

2015-10-01

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower interface trap density in the order of 6×1011cm-2.eV-1. Also, it is observed that O2 plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1×1012cm-2.eV-1 was obtained for different treatments presented in this work.

Electron Trapping and Charge Transport by Large Amplitude Whistlers

NASA Technical Reports Server (NTRS)

Kellogg, P. J.; Cattell, C. A.; Goetz, K.; Monson, S. J.; Wilson, L. B., III

2010-01-01

Trapping of electrons by magnetospheric whistlers is investigated using data from the Waves experiment on Wind and the S/WAVES experiment on STEREO. Waveforms often show a characteristic distortion which is shown to be due to electrons trapped in the potential of the electrostatic part of oblique whistlers. The density of trapped electrons is significant, comparable to that of the unperturbed whistler. Transport of these trapped electrons to new regions can generate potentials of several kilovolts, Trapping and the associated potentials may play an important role in the acceleration of Earth's radiation belt electrons.

Ionizing and Non-ionizing Radiation Effects in Thin Layer Hexagonal Boron Nitride

DTIC Science & Technology

2015-03-01

capacitance-voltage measurements indicating Frenkel-Poole (FP) and Fowler-Nordheim tunneling (FNT) are the primary current mechanisms before and after...linear FNT model and a 0.013 eV increase in the barrier potential for the FP model. There was a decrease of 0.19 eV in the tunneling potential for the...non-linear FNT model. Defects generated by the neutron damage increased currents by increasing trap assisted tunneling (TAT). v

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

Energy of charged states in the acetanilide crystal: trapping of charge-transfer states at vacancies as a possible mechanism for optical damage.

PubMed

Tsiaousis, D; Munn, R W

2004-04-15

Calculations for the acetanilide crystal yield the effective polarizability (16.6 A(3)), local electric field tensor, effective dipole moment (5.41 D), and dipole-dipole energy (-12.8 kJ/mol). Fourier-transform techniques are used to calculate the polarization energy P for a single charge in the perfect crystal (-1.16 eV); the charge-dipole energy W(D) is zero if the crystal carries no bulk dipole moment. Polarization energies for charge-transfer (CT) pairs combine with the Coulomb energy E(C) to give the screened Coulomb energy E(scr); screening is nearly isotropic, with E(scr) approximately E(C)/2.7. For CT pairs W(D) reduces to a term deltaW(D) arising from the interaction of the charge on each ion with the change in dipole moment on the other ion relative to the neutral molecule. The dipole moments calculated by density-functional theory methods with the B3LYP functional at the 6-311++G(**) level are 3.62 D for the neutral molecule, changing to 7.13 D and 4.38 D for the anion and cation, relative to the center of mass. Because of the large change in the anion, deltaW(D) reaches -0.9 eV and modifies the sequence of CT energies markedly from that of E(scr), giving the lowest two CT pairs at -1.98 eV and -1.41 eV. The changes in P and W(D) near a vacancy are calculated; W(D) changes for the individual charges because the vacancy removes a dipole moment and modifies the crystal dielectric response, but deltaW(D) and E(C) do not change. A vacancy yields a positive change DeltaP that scatters a charge or CT pair, but the change DeltaW(D) can be negative and large enough to outweigh DeltaP, yielding traps with depths that can exceed 150 meV for single charges and for CT pairs. Divacancies yield traps with depths nearly equal to the sum of those produced by the separate vacancies and so they can exceed 300 meV. These results are consistent with a mechanism of optical damage in which vacancies trap optically generated CT pairs that recombine and release energy; this can disrupt the lattice around the vacancy, thereby favoring trapping and recombination of CT pairs generated by subsequent photon absorption, leading to further lattice disruption. Revisions to previous calculations on trapping of CT pairs in anthracene are reported. (c) 2004 American Institute of Physics.

Excitation of lowest electronic states of the uracil molecule by slow electrons

NASA Astrophysics Data System (ADS)

Chernyshova, I. V.; Kontros, J. E.; Markush, P. P.; Shpenik, O. B.

2012-07-01

The excitation of lowest electronic states of the uracil molecule in the gas phase has been studied by electron energy loss spectroscopy. Along with excitation of lowest singlet states, excitation of two lowest triplet states at 3.75 and 4.76 eV (±0.05 eV) and vibrational excitation of the molecule in two resonant ranges (1-2 and 3-4 eV) have been observed for the first time. The peak of the excitation band related to the lowest singlet state (5.50 eV) is found to be blueshifted by 0.4 eV in comparison with the optical absorption spectroscopy data. The threshold excitation spectra have been measured for the first time, with detection of electrons inelastically scattered by an angle of 180°. These spectra exhibit clear separation of the 5.50-eV-wide band into two bands, which are due to the excitation of the triplet 13 A″ and singlet 11 A' states.

Experimental and theoretical electron-scattering cross-section data for dichloromethane

NASA Astrophysics Data System (ADS)

Krupa, K.; Lange, E.; Blanco, F.; Barbosa, A. S.; Pastega, D. F.; Sanchez, S. d'A.; Bettega, M. H. F.; García, G.; Limão-Vieira, P.; Ferreira da Silva, F.

2018-04-01

We report on a combination of experimental and theoretical investigations into the elastic differential cross sections (DCSs) and integral cross sections for electron interactions with dichloromethane, C H2C l2 , in the incident electron energy over the 7.0-30 eV range. Elastic electron-scattering cross-section calculations have been performed within the framework of the Schwinger multichannel method implemented with pseudopotentials (SMCPP), and the independent-atom model with screening-corrected additivity rule including interference-effects correction (IAM-SCAR+I). The present elastic DCSs have been found to agree reasonably well with the results of IAM-SCAR+I calculations above 20 eV and also with the SMC calculations below 30 eV. Although some discrepancies were found for 7 eV, the agreement between the two theoretical methodologies is remarkable as the electron-impact energy increases. Calculated elastic DCSs are also reported up to 10000 eV for scattering angles from 0° to 180° together with total cross section within the IAM-SCAR+I framework.

Characterisation of retention properties of charge-trapping memory cells at low temperatures

NASA Astrophysics Data System (ADS)

Yurchuk, E.; Bollmann, J.; Mikolajick, T.

2009-09-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

Reactions in 1,1,1-trifluoroacetone triggered by low energy electrons (0-10 eV): from simple bond cleavages to complex unimolecular reactions.

PubMed

Illenberger, Eugen; Meinke, Martina C

2014-08-21

The impact of low energy electrons (0-10 eV) to 1,1,1-trifluoroacetone yields a variety of fragment anions which are formed via dissociative electron attachment (DEA) through three pronounced resonances located at 0.8 eV, near 4 eV, and in the energy range 8-9 eV. The fragment ions arise from different reactions ranging from the direct cleavage of one single or double bond (formation of F(-), CF3(-), O(-), (M-H)(-), and M-F)(-)) to remarkably complex unimolecular reactions associated with substantial geometric and electronic rearrangement in the transitory intermediate (formation of OH(-), FHF(-), (M-HF)(-), CCH(-), and HCCO(-). The ion CCH(-), for example, is formed by an excision of unit from the target molecule through the concerted cleavage of four bonds and recombination to H2O within the neutral component of the reaction.

Transport of energy by ultraintense laser-generated electrons in nail-wire targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, T.; Lawrence Livermore National Laboratory, Livermore, California 94550; Key, M. H.

2009-11-15

Nail-wire targets (20 {mu}m diameter copper wires with 80 {mu}m hemispherical head) were used to investigate energy transport by relativistic fast electrons generated in intense laser-plasma interactions. The targets were irradiated using the 300 J, 1 ps, and 2x10{sup 20} W{center_dot}cm{sup -2} Vulcan laser at the Rutherford Appleton Laboratory. A spherically bent crystal imager, a highly ordered pyrolytic graphite spectrometer, and single photon counting charge-coupled device gave absolute Cu K{alpha} measurements. Results show a concentration of energy deposition in the head and an approximately exponential fall-off along the wire with about 60 {mu}m 1/e decay length due to resistive inhibition.more » The coupling efficiency to the wire was 3.3{+-}1.7% with an average hot electron temperature of 620{+-}125 keV. Extreme ultraviolet images (68 and 256 eV) indicate additional heating of a thin surface layer of the wire. Modeling using the hybrid E-PLAS code has been compared with the experimental data, showing evidence of resistive heating, magnetic trapping, and surface transport.« less

Hydrogen isotope trapping in Al-Cu binary alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Paul; Karnesky, Richard A.

In this study, the trapping mechanisms for hydrogen isotopes in Al–X Cu (0.0 at. % < X < 3.5 at. %) alloys were investigated using thermal desorption spectroscopy (TDS), electrical conductivity, and differential scanning calorimetry. Constant heating rate TDS was used to determine microstructural trap energies and occupancies. In addition to the trapping states in pure Al reported in the literature (interstitial lattice sites, dislocations, and vacancies), a trap site due to Al–Cu intermetallic precipitates is observed. The binding energy of this precipitate trap is (18 ± 3) kJ•mol –1 (0.19 ± 0.03 eV). Typical occupancy of this trap ismore » high; for Al–2.6 at. % Cu (a Cu composition comparable to that in AA2219) charged at 200 °C with 130 MPa D 2 for 68 days, there is ca. there is 3.15×10 –7 mol D bound to the precipitate trap per mol of Al, accounting for a third of the D in the charged sample.« less

Hydrogen isotope trapping in Al-Cu binary alloys

DOE PAGES

Chao, Paul; Karnesky, Richard A.

2016-01-01

In this study, the trapping mechanisms for hydrogen isotopes in Al–X Cu (0.0 at. % < X < 3.5 at. %) alloys were investigated using thermal desorption spectroscopy (TDS), electrical conductivity, and differential scanning calorimetry. Constant heating rate TDS was used to determine microstructural trap energies and occupancies. In addition to the trapping states in pure Al reported in the literature (interstitial lattice sites, dislocations, and vacancies), a trap site due to Al–Cu intermetallic precipitates is observed. The binding energy of this precipitate trap is (18 ± 3) kJ•mol –1 (0.19 ± 0.03 eV). Typical occupancy of this trap ismore » high; for Al–2.6 at. % Cu (a Cu composition comparable to that in AA2219) charged at 200 °C with 130 MPa D 2 for 68 days, there is ca. there is 3.15×10 –7 mol D bound to the precipitate trap per mol of Al, accounting for a third of the D in the charged sample.« less

Extracellular Vesicles in Physiology, Pathology, and Therapy of the Immune and Central Nervous System, with Focus on Extracellular Vesicles Derived from Mesenchymal Stem Cells as Therapeutic Tools

PubMed Central

Koniusz, Sylwia; Andrzejewska, Anna; Muraca, Maurizio; Srivastava, Amit K.; Janowski, Miroslaw; Lukomska, Barbara

2016-01-01

Extracellular vesicles (EVs) are membrane-surrounded structures released by most cell types. They are characterized by a specific set of proteins, lipids and nucleic acids. EVs have been recognized as potent vehicles of intercellular communication to transmit biological signals between cells. In addition, pathophysiological roles of EVs in conditions like cancer, infectious diseases and neurodegenerative disorders are well established. In recent years focus has been shifted on therapeutic use of stem cell derived-EVs. Use of stem cell derived-EVs present distinct advantage over the whole stem cells as EVs do not replicate and after intravenous administration, they are less likely to trap inside the lungs. From the therapeutic perspective, the most promising cellular sources of EVs are mesenchymal stem cells (MSCs), which are easy to obtain and maintain. Therapeutic activity of MSCs has been shown in numerous animal models and the beneficial paracrine effect of MSCs may be mediated by EVs. The various components of MSC derived-EVs such as proteins, lipids, and RNA might play a specific therapeutic role. In this review, we characterize the role of EVs in immune and central nervous system (CNS); present evidences for defective signaling of these vesicles in neurodegeneration and therapeutic role of EVs in CNS. PMID:27199663

Constraints on exotic dipole-dipole couplings between electrons at the micron scale

NASA Astrophysics Data System (ADS)

Kotler, Shlomi; Ozeri, Roee; Jackson Kimball, Derek

2015-05-01

Until recently, the magnetic dipole-dipole coupling between electrons had not been directly observed experimentally. This is because at the atomic scale dipole-dipole coupling is dominated by the exchange interaction and at larger distances the dipole-dipole coupling is overwhelmed by ambient magnetic field noise. In spite of these challenges, the magnetic dipole-dipole interaction between two electron spins separated by 2.4 microns was recently measured using the valence electrons of trapped Strontium ions [S. Kotler, N. Akerman, N. Navon, Y. Glickman, and R. Ozeri, Nature 510, 376 (2014)]. We have used this measurement to directly constrain exotic dipole-dipole interactions between electrons at the micron scale. For light bosons (mass 0.1 eV), we find that coupling constants describing pseudoscalar and axial-vector mediated interactions must be | gPegPe/4 πℏc | <= 1 . 5 × 10-3 and | gAegAe/4 πℏc | <= 1 . 2 × 10-17 , respectively, at the 90% confidence level. These bounds significantly improve on previous constraints in this mass range: for example, the constraints on axial-vector interactions are six orders of magnitude stronger than electron-positron constraints based on positronium spectroscopy. Supported by the National Science Foundation, I-Core: the Israeli excellence center, and the European Research Council.

Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.

PubMed

Park, Rebecca Sejung; Shulaker, Max Marcel; Hills, Gage; Suriyasena Liyanage, Luckshitha; Lee, Seunghyun; Tang, Alvin; Mitra, Subhasish; Wong, H-S Philip

2016-04-26

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

On the Ground Electronic States of TiF and TiCl

NASA Astrophysics Data System (ADS)

Boldyrev, Alexander I.; Simons, Jack

1998-04-01

The low-lying electronic states of TiF and TiCl have been studied using high levelab initiotechniques. Both are found to have two low-lying excited electronic states,4Σ-(0.080 eV (TiF) and 0.236 eV (TiCl)) and2Δ (0.266 eV (TiF) and 0.348 eV (TiCl)), and4Φ ground states at the highest CCSD(T)/6-311++G(2d,2f) level of theory. Our theoretical predictions of4Φ ground electronic states for TiF and TiCl support recent experimental findings by Ram and Bernath, and our calculated bond lengths and vibrational frequencies are in reasonable agreement with their experimental data.

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

NASA Technical Reports Server (NTRS)

Lagowski, J.; Lin, D. G.; Chen, T.-P.; Skowronski, M.; Gatos, H. C.

1985-01-01

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Laser photoelectron spectroscopy of MnH - 2, FeH - 2, CoH - 2, and NiH - 2: Determination of the electron affinities for the metal dihydrides

NASA Astrophysics Data System (ADS)

Miller, Amy E. S.; Feigerle, C. S.; Lineberger, W. C.

1986-04-01

The laser photoelectron spectra of MnH-2, FeH-2, CoH-2, and NiH-2 and the analogous deuterides are reported. Lack of vibrational structure in the spectra suggests that all of the dihydrides and their negative ions have linear geometries, and that the transitions observed in the spectra are due to the loss of nonbonding d electrons. The electron affinities for the metal dihydrides are determined to be 0.444±0.016 eV for MnH2, 1.049±0.014 eV for FeH2, 1.450±0.014 eV for CoH2, and 1.934±0.008 eV for NiH2. Electronic excitation energies are provided for excited states of FeH2, CoH2, and NiH2. Electron affinities and electronic excitation energies for the dideuterides are also reported. A limit on the electron affinity of CrH2 of ≥2.5 eV is determined. The electron affinities of the dihydrides directly correlate with the electron affinities of the high-spin states of the monohydrides, and with the electron affinities of the metal atoms. These results are in agreement with a qualitative model developed for bonding in the monohydrides.

Low energy positron beam system for the investigation of 2D and porous materials

NASA Astrophysics Data System (ADS)

Chrysler, M. D.; Chirayath, V. A.; Mcdonald, A. D.; Gladen, R. W.; Fairchild, A. J.; Koymen, A. R.; Weiss, A. H.

2017-01-01

An advanced variable energy positron beam (~2 eV to 20 keV) has been designed, tested and utilized for coincidence Doppler broadening (CDB) measurements at the University of Texas at Arlington (UTA). A high efficiency solidified rare gas (Neon) moderator was used for the generation of a slow positron beam. The gamma rays produced as a result of the annihilation of positrons with the sample electrons are measured using a high purity Germanium (HPGe) detector in coincidence with a NaI(Tl) detector. Modifications to the system, currently underway, permits simultaneous measurements utilizing Positron annihilation induced Auger Electron Spectroscopy (PAES) and CDB. The tendency of positrons to become trapped in an image potential well at the surface will allow the new system to be used in measurements of the chemical structure of surfaces, internal or external and interfaces. The system will utilize a time of flight (TOF) technique for electron energy measurements. A 3m flight path from the sample to a micro-channel plate (MCP) in the new system will give it superior energy resolution at higher electron energies as compared to previous TOF systems utilizing shorter flight paths.

Hole localization, migration, and the formation of peroxide anion in perovskite SrTiO3

NASA Astrophysics Data System (ADS)

Chen, Hungru; Umezawa, Naoto

2014-07-01

Hybrid density functional calculations are carried out to investigate the behavior of holes in SrTiO3. As in many other oxides, it is shown that a hole tend to localize on one oxygen forming an O- anion with a concomitant lattice distortion; therefore a hole polaron. The calculated emission energy from the recombination of the localized hole and a conduction-band electron is about 2.5 eV, in good agreement with experiments. Therefore the localization of the hole or self-trapping is likely to be responsible for the green photoluminescence at low temperature, which was previously attributed to an unknown defect state. Compared to an electron, the calculated hole polaron mobility is three orders of magnitude lower at room temperature. In addition, two O- anions can bind strongly to form an O22- peroxide anion. No electronic states associated with the O22- peroxide anion are located inside the band gap or close to the band edges, indicating that it is electronically inactive. We suggest that in addition to the oxygen vacancy, the formation of the O22- peroxide anion can be an alternative to compensate acceptor doping in SrTiO3.

Temperature dependence of optically stimulated luminescence of α-Al2O3:C,Mg

NASA Astrophysics Data System (ADS)

Kalita, J. M.; Chithambo, M. L.

2017-11-01

Thermal assistance and thermal quenching are two independently acting thermodynamic phenomena that simultaneously affect the stimulation of luminescence. We have studied thermal assistance to luminescence optically stimulated from α-Al2O3:C,Mg. Since thermal assistance causes only a minor change in the luminescence intensity, measurements were made after the sample had been pre-exposed to stimulating light to reduce its intensity significantly, that is, in the slow component of its decay curve. The luminescence intensity was monitored as a function of measurement temperature between 30 and 130 °C. The intensity goes through a peak at 60 °C due to competing effects of thermal assistance and thermal quenching. The initial increase of intensity is attributed to dominant thermal assistance whereas the subsequent decrease of intensity is ascribed to dominant thermal quenching. The activation energy for thermal assistance was calculated for the main electron trap of an un-annealed sample as 0.324 ± 0.020 eV and in a sample annealed at 900 °C as 0.416 ± 0.028 eV. Implications of such differences in the value of the activation energy for thermal assistance are considered.

Electron-stimulated reactions in layered CO/H2O films: Hydrogen atom diffusion and the sequential hydrogenation of CO to methanol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrik, Nikolay G.; Monckton, Rhiannon J.; Koehler, Sven

Low-energy (100 eV) electron-stimulated reactions in layered H2O/CO/H2O ices are investigated. For CO trapped within approximately 50 ML of the vacuum interface in the amorphous solid water (ASW) films, both oxidation and reduction reactions are observed. However for CO buried more deeply in the film, only the reduction of CO to methanol is observed. Experiments with layered films of H2O and D2O show that the hydrogen atoms participating in the reduction of the buried CO originate in region from ~10 – 40 ML below the surface of the ASW films and subsequently diffuse through the film. For deeply buried COmore » layers, the CO reduction reactions quickly increase with temperature above ~60 K. We present a simple chemical kinetic model that treats the diffusion of hydrogen atoms in the ASW and sequential hydrogenation of the CO to methanol that accounts for the observations.« less

Axions and SN1987A

NASA Technical Reports Server (NTRS)

Burrows, Adam; Turner, Michael S.; Brinkmann, R. P.

1988-01-01

The effect of free-streaming axion emission on numerical models for the cooling of the newly born neutron star associated with SN1987A is considered. It is found that for an axion mass of greater than approximately 10 to the -3 eV, axion emission shortens the duration of the expected neutrino burst so significantly that it would be inconsistent with the neutrino observations made by the Kamiokande II and Irvine-Michigan-Brookhaven detectors. However, the possibility has not been investigated that axion trapping (which should occur for masses greater than or equal to 0.02 eV) sufficiently reduces axion emission so that axion masses greater than approximately 2 eV would be consistent with the neutrino observations.

Energy of atomic shakeoff electrons from positron decay of 37K

NASA Astrophysics Data System (ADS)

Behr, John; Fenker, Benjamin; Gorelov, Alexandre; Anholm, Melissa; Behling, Spencer; Mehlman, Michael; Melconian, Dan; Ashery, Danny; Gwinner, Gerald

2015-10-01

We have measured the low-energy atomic shakeoff electron spectrum from the β+ decay of 37K. We collect atomic electrons emitted from laser-cooled 37K using a nearly uniform electric field at low magnetic field into a position-sensitive microchannel plate. A coincidence with energetic β+s removes background. The differential position information translates to a differential electron energy spectrum. The energy spectrum from 1-100 eV is reproduced well by an analytic calculation for hydrogenic wavefunctions [Levinger PR 90 11 (1953)] using potassium quantum defects. Less than one percent of the electrons have energies higher than the 25 eV threshold for double DNA strand breaks, so relative biological effectiveness would not be altered by including these electrons. The average energy carried off by these electrons (a few eV) is smaller than expected from simple Thomas-Fermi estimates (65eV). Supported by NSERC, NRC through TRIUMF, U.S. D.O.E., State of Texas, Israel Science Foundation

Photo-fragmentation spectroscopy of benzylium and 1-phenylethyl cations

NASA Astrophysics Data System (ADS)

Féraud, Géraldine; Dedonder-Lardeux, Claude; Soorkia, Satchin; Jouvet, Christophe

2014-01-01

The electronic spectra of cold benzylium (C6H5-CH2+) and 1-phenylethyl (C6H5-CH-CH3+) cations have been recorded via photofragment spectroscopy. Benzylium and 1-phenylethyl cations produced from electrosprayed benzylamine and phenylethylamine solutions, respectively, were stored in a cryogenically cooled quadrupole ion trap and photodissociated by an OPO laser, scanned in parts of the UV and visible regions (600-225 nm). The electronic states and active vibrational modes of the benzylium and 1-phenylethyl cations as well as those of their tropylium or methyl tropylium isomers have been calculated with ab initio methods for comparison with the spectra observed. Sharp vibrational progressions are observed in the visible region while the absorption features are much broader in the UV. The visible spectrum of the benzylium cation is similar to that obtained in an argon tagging experiment [V. Dryza, N. Chalyavi, J. A. Sanelli, and E. J. Bieske, J. Chem. Phys. 137, 204304 (2012)], with an additional splitting assigned to Fermi resonances. The visible spectrum of the 1-phenylethyl cation also shows vibrational progressions. For both cations, the second electronic transition is observed in the UV, around 33 000 cm-1 (4.1 eV) and shows a broadened vibrational progression. In both cases the S2 optimized geometry is non-planar. The third electronic transition observed around 40 000 cm-1 (5.0 eV) is even broader with no apparent vibrational structures, which is indicative of either a fast non-radiative process or a very large change in geometry between the excited and the ground states. The oscillator strengths calculated for tropylium and methyl tropylium are weak. Therefore, these isomeric structures are most likely not responsible for these absorption features. Finally, the fragmentation pattern changes in the second and third electronic states: C2H2 loss becomes predominant at higher excitation energies, for both cations.

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices

NASA Astrophysics Data System (ADS)

Mulder, Watson

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are an important photovoltaic technology, recently reaching record power conversion efficiencies. HIT cells hold advantages over the conventional crystalline Si solar cells, such as their fabrication at lower temperatures and their shorter fabrication time. It is important to understand the electronic characteristics and transport properties of HIT cells to continue to improve their efficiencies. The fundamental measurements of a HIT solar cell with an innovative n+/p/p+ structure are presented. We also report on a series of these HIT cells fabricated on wafers with different doping concentrations, observing the relationship between doping concentration and characteristics such as open-circuit voltage and diffusion length. Nanocrystalline Silicon-Germanium (nc-SiGe) is a useful material for photovoltaic devices and photodetectors. The material features good absorption extending to the infrared region even in thin layers. Its bandgap can be adjusted between that of Si (˜1.1 eV) and Ge (˜0.7 eV) by varying the alloy composition ratio during deposition. However, there has been very little previous work to measure and understand the defect density spectrum of nc-SiGe. Defects are responsible for controlling the recombination and thus the performance of solar cell devices. Capacitance-Frequency measurements at various temperatures are used in order to estimate the trap density profile within the bandgap of nc-SiGe.

Correlation between energy deposition and molecular damage from Auger electrons: A case study of ultra-low energy (5-18 eV) electron interactions with DNA.

PubMed

Rezaee, Mohammad; Hunting, Darel J; Sanche, Léon

2014-07-01

The present study introduces a new method to establish a direct correlation between biologically related physical parameters (i.e., stopping and damaging cross sections, respectively) for an Auger-electron emitting radionuclide decaying within a target molecule (e.g., DNA), so as to evaluate the efficacy of the radionuclide at the molecular level. These parameters can be applied to the dosimetry of Auger electrons and the quantification of their biological effects, which are the main criteria to assess the therapeutic efficacy of Auger-electron emitting radionuclides. Absorbed dose and stopping cross section for the Auger electrons of 5-18 eV emitted by(125)I within DNA were determined by developing a nanodosimetric model. The molecular damages induced by these Auger electrons were investigated by measuring damaging cross section, including that for the formation of DNA single- and double-strand breaks. Nanoscale films of pure plasmid DNA were prepared via the freeze-drying technique and subsequently irradiated with low-energy electrons at various fluences. The damaging cross sections were determined by employing a molecular survival model to the measured exposure-response curves for induction of DNA strand breaks. For a single decay of(125)I within DNA, the Auger electrons of 5-18 eV deposit the energies of 12.1 and 9.1 eV within a 4.2-nm(3) volume of a hydrated or dry DNA, which results in the absorbed doses of 270 and 210 kGy, respectively. DNA bases have a major contribution to the deposited energies. Ten-electronvolt and high linear energy transfer 100-eV electrons have a similar cross section for the formation of DNA double-strand break, while 100-eV electrons are twice as efficient as 10 eV in the induction of single-strand break. Ultra-low-energy electrons (<18 eV) substantially contribute to the absorbed dose and to the molecular damage from Auger-electron emitting radionuclides; hence, they should be considered in the dosimetry calculation of such radionuclides. Moreover, absorbed dose is not an appropriate physical parameter for nanodosimetry. Instead, stopping cross section, which describes the probability of energy deposition in a target molecule can be an appropriate nanodosimetric parameter. The stopping cross section is correlated with a damaging cross section (e.g., cross section for the double-strand break formation) to quantify the number of each specific lesion in a target molecule for each nuclear decay of a single Auger-electron emitting radionuclide.

Damage induced to DNA by low-energy (0-30 eV) electrons under vacuum and atmospheric conditions.

PubMed

Brun, Emilie; Cloutier, Pierre; Sicard-Roselli, Cécile; Fromm, Michel; Sanche, Léon

2009-07-23

In this study, we show that it is possible to obtain data on DNA damage induced by low-energy (0-30 eV) electrons under atmospheric conditions. Five monolayer films of plasmid DNA (3197 base pairs) deposited on glass and gold substrates are irradiated with 1.5 keV X-rays in ultrahigh vacuum and under atmospheric conditions. The total damage is analyzed by agarose gel electrophoresis. The damage produced on the glass substrate is attributed to energy absorption from X-rays, whereas that produced on the gold substrate arises from energy absorption from both the X-ray beam and secondary electrons emitted from the gold surface. By analysis of the energy of these secondary electrons, 96% are found to have energies below 30 eV with a distribution peaking at 1.4 eV. The differences in damage yields recorded with the gold and glass substrates is therefore essentially attributed to the interaction of low-energy electrons with DNA under vacuum and hydrated conditions. From these results, the G values for low-energy electrons are determined to be four and six strand breaks per 100 eV, respectively.

Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

NASA Astrophysics Data System (ADS)

Carl, D. A.; Hess, D. W.; Lieberman, M. A.; Nguyen, T. D.; Gronsky, R.

1991-09-01

Thin (3-300-nm) oxides were grown on single-crystal silicon substrates at temperatures from 523 to 673 K in a low-pressure electron cyclotron resonance (ECR) oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal-oxide-semiconductor technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O-, transport limited growth. Constant current anodizations yielded three regions of growth: (1) a concentration gradient dominated regime for oxides thinner than 10 nm, (2) a field dominated regime with ohmic charged oxidant transport for oxide thickness in the range of 10 nm to approximately 100 nm, and (3) a space-charge limited regime for films thicker than approximately 100 nm. The relationship between oxide thickness (xox), overall potential drop (Vox) and ion current (ji) in the space-charge limited transport region was of the form: ji ∝ V2ox/x3ox. Transmission electron microscopy analysis of 5-60-nm-thick anodized films indicated that the silicon-silicon dioxide interface was indistinguishable from that of thermal oxides grown at 1123 K. High-frequency capacitance-voltage (C-V) and ramped bias current-voltage (I-V) studies performed on 5.4-30-nm gate thickness capacitors indicated that the as-grown ECR films had high levels of fixed oxide charge (≳1011 cm-2) and interface traps (≳1012 cm-2 eV-1). The fixed charge level could be reduced to ≊4×1010 cm-2 by a 20 min polysilicon gate activation anneal at 1123 K in nitrogen; the interface trap density at mid-band gap decreased to ≊(1-2)×1011 cm-2 eV-1 after this process. The mean breakdown strength for anodic oxides grown under optimum conditions was 10.87±0.83 MV cm-1. Electrical properties of the 5.4-8-nm gates compared well with thicker films and control dry thermal oxides of similar thicknesses.

The main types of electron energy distribution determined by model fitting to optical emissions during HF wave ionospheric modification experiments

NASA Astrophysics Data System (ADS)

Vlasov, M. N.; Kelley, M. C.; Hysell, D. L.

2013-06-01

Enhanced optical emissions observed during HF pumping are induced by electrons accelerated by high-power electromagnetic waves. Using measured emission intensities, the energy distribution of accelerated electrons can be inferred. Energy loss from the excitation of molecular nitrogen vibrational levels (the vibrational barrier) strongly influences the electron energy distribution (EED). In airglow calculations, compensation for electron depletion within the 2-3 eV energy range, induced by the vibrational barrier, can be achieved via electrons with an EED similar to a Gaussian distribution and energies higher than 3 eV. This EED has a peak within the 5-10 eV energy range. We show that the main EED features depend strongly on altitude and solar activity. An EED similar to a power law distribution can occur above 270-300 km altitude. Below 270 km altitude, a Gaussian distribution for energies between 3 eV and 10 eV, together with a power law distribution for energies higher than 10 eV, is indicated. A Gaussian distribution combined with an exponential function is needed below 230 km altitude. The transition altitude from Gaussian to power law distribution depends strongly on solar activity, increasing for high solar activity. Electrons accelerated during the initial collisionless stage can inhibit the depletion of fast electrons within the vibrational barrier range, an effect that strongly depends on altitude and solar activity. The approach, based on the effective root square electric field, enables EED calculation, providing the observed red-line intensities for low and high solar activities.

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perevalov, T. V., E-mail: timson@isp.nsc.ru; Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk; Aliev, V. Sh.

2014-02-17

The origin of a blue luminescence band at 2.7 eV and a luminescence excitation band at 5.2 eV of hafnia has been studied in stoichiometric and non-stoichiometric hafnium oxide films. Experimental and calculated results from the first principles valence band spectra showed that the stoichiometry violation leads to the formation of the peak density of states in the band gap caused by oxygen vacancies. Cathodoluminescence in the non-stoichiometric film exhibits a band at 2.65 eV that is excited at the energy of 5.2 eV. The optical absorption spectrum calculated for the cubic phase of HfO{sub 2} with oxygen vacancies showsmore » a peak at 5.3 eV. Thus, it could be concluded that the blue luminescence band at 2.7 eV and HfO{sub x} excitation peak at 5.2 eV are due to oxygen vacancies. The thermal trap energy in hafnia was estimated.« less

Dissociative Photoionization of 1-Halogenated Silacyclohexanes: Silicon Traps the Halogen.

PubMed

Bodi, Andras; Sigurdardottir, Katrin Lilja; Kvaran, Ágúst; Bjornsson, Ragnar; Arnason, Ingvar

2016-11-23

The threshold photoelectron spectra and threshold photoionization mass spectra of 1-halogenated-1-silacyclohexanes, for the halogens X = F, Cl, Br, and I, have been obtained using synchrotron vacuum ultraviolet radiation and photoelectron photoion coincidence spectroscopy. As confirmed by a similar ionization onset and density functional theory molecular orbitals, the ionization to the ground state is dominated by electron removal from the silacyclohexane ring for X = F, Cl, and Br, and from the halogen lone pair for X = I. The breakdown diagrams show that the dissociative photoionization mechanism is also different for X = I. Whereas the parent ions decay by ethylene loss for X = F to Br in the low-energy regime, the iodine atom is lost for X = I. The first step is followed by a sequential ethylene loss at higher internal energies in each of the compounds. It is argued that the tendency of silicon to lower bond angles stabilizes the complex cation in which C 2 H 4 is η 2 -coordinated to it, and which precedes ethylene loss. Together with the relatively strong silicon-halogen bonds and the increased inductive effect of the silacyclohexane ring in stabilizing the cation, this explains the main differences observed in the fragmentation of the halogenated silacyclohexane and halogenated cyclohexane ions. The breakdown diagrams have been modeled taking into account slow dissociations at threshold and the resulting kinetic shift. The 0 K appearance energies have been obtained to within 0.08 eV for the ethylene loss for X = F to Br (10.56, 10.51, and 10.51 eV, respectively), the iodine atom loss for X = I (10.11 eV), the sequential ethylene loss for X = F to I (12.29, 12.01, 11.94, and 11.86 eV, respectively), and the minor channels of H loss for X = F (10.56 eV) and propylene loss in X = Cl (also at 10.56 eV). The appearance energies for the major channels likely correspond to the dissociative photoionization reaction energy.

Trap-assisted hole injection and quantum efficiency enhancement in poly(9,9' dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Seeley, Alexander J. A. B.; Friend, Richard H.; Kim, Ji-Seon; Burroughes, Jeremy H.

2004-12-01

We report a reversible many-fold quantum efficiency enhancement during electrical driving of polymer light-emitting diodes (LEDs) containing poly(9,9' dioctylfluorene-alt-benzothiadiazole) (F8BT), developing over several minutes or hours at low applied bias and recovering on similar time scales after driving. This phenomenon is observed only in devices containing F8BT as an emissive layer in pure or blended form, regardless of anode and cathode choices and even in the absence of a poly(styrene-sulphonate)-doped poly(3,4-ethylene-dioxythiophene) (PEDOT:PSS) layer. We report detailed investigations using a standardized device structure containing PEDOT:PSS and a calcium cathode. Direct measurements of trapped charge recovered from the device after driving significantly exceed the unipolar limit, and thermally activated relaxation suggests a maximum trap depth around 0.6eV. Neither photoluminescence nor electroluminescence spectra reveal any change in the bulk optoelectronic properties of the emissive polymer nor any new emissive species. During the quantum efficiency (QE) enhancement process, the bulk conduction of the device increases. Reverse bias treatment of the device significantly reinforces the QE enhancement. Based on these observations, we propose a simple model in which interfacial dipoles are generated by trapped holes near the anode combining with injected electrons, to produce a narrow tunneling barrier for easy hole injection. The new injection pathway leads to a higher hole current density and thus a better charge injection balance. This produces the relatively high quantum efficiency observed in all F8BT LEDs.

On the Ground Electronic States of TiF and TiCl

PubMed

Boldyrev; Simons

1998-04-01

The low-lying electronic states of TiF and TiCl have been studied using high level ab initio techniques. Both are found to have two low-lying excited electronic states, 4Sigma- (0.080 eV (TiF) and 0.236 eV (TiCl)) and 2Delta (0.266 eV (TiF) and 0.348 eV (TiCl)), and 4Phi ground states at the highest CCSD(T)/6-311++G(2d,2f) level of theory. Our theoretical predictions of 4Phi ground electronic states for TiF and TiCl support recent experimental findings by Ram and Bernath, and our calculated bond lengths and vibrational frequencies are in reasonable agreement with their experimental data. Copyright 1998 Academic Press.

Low energy electron attenuation lengths in core–shell nanoparticles

DOE PAGES

Jacobs, Michael I.; Kostko, Oleg; Ahmed, Musahid; ...

2017-05-05

Here, a velocity map imaging spectrometer is used to measure photoemission from free core–shell nanoparticles, where a salt core is coated with a liquid hydrocarbon shell (i.e. squalane). By varying the radial thickness of the hydrocarbon shell, electron attenuation lengths (EALs) are determined by measuring the decay in photoemission intensity from the salt core. In squalane, electrons with kinetic energy (KE) above 2 eV are found to have EALs of 3–5 nm, whereas electrons with smaller KE (<2 eV) have significantly larger EALs of >15 nm. These results (in the context of other energy-resolved EAL measurements) suggest that the energymore » dependent behavior of low energy electrons is similar in dielectrics when KE > 2 eV. At this energy the EALs do not appear to exhibit strong energy dependence. However, at very low KE (<2 eV), the EALs diverge and appear to be extremely material dependent.« less

Study of optical and electronic properties of nickel from reflection electron energy loss spectra

NASA Astrophysics Data System (ADS)

Xu, H.; Yang, L. H.; Da, B.; Tóth, J.; Tőkési, K.; Ding, Z. J.

2017-09-01

We use the classical Monte Carlo transport model of electrons moving near the surface and inside solids to reproduce the measured reflection electron energy-loss spectroscopy (REELS) spectra. With the combination of the classical transport model and the Markov chain Monte Carlo (MCMC) sampling of oscillator parameters the so-called reverse Monte Carlo (RMC) method was developed, and used to obtain optical constants of Ni in this work. A systematic study of the electronic and optical properties of Ni has been performed in an energy loss range of 0-200 eV from the measured REELS spectra at primary energies of 1000 eV, 2000 eV and 3000 eV. The reliability of our method was tested by comparing our results with the previous data. Moreover, the accuracy of our optical data has been confirmed by applying oscillator strength-sum rule and perfect-screening-sum rule.

Modeling, Analysis, and Interpretation of Photoelectron Energy Spectra at Enceladus Observed by Cassini

NASA Astrophysics Data System (ADS)

Taylor, S. A.; Coates, A. J.; Jones, G. H.; Wellbrock, A.; Fazakerley, A. N.; Desai, R. T.; Caro-Carretero, R.; Michiko, M. W.; Schippers, P.; Waite, J. H.

2018-01-01

The Electron Spectrometer (ELS) of the Cassini Plasma Spectrometer has observed photoelectrons produced in the plume of Enceladus. These photoelectrons are observed during Enceladus encounters in the energetic particle shadow where the spacecraft is largely shielded from penetrating radiation by the moon. We present a complex electron spectrum at Enceladus including evidence of two previously unidentified electron populations at 6-10 eV and 10-16 eV. We estimate that the proportion of "hot" (>15 eV) to "cold" (<15 eV) electrons during the Enceladus flybys is ≈ 0.1-0.5%. We have constructed a model of photoelectron production in the plume and compared it with ELS Enceladus flyby data by scaling and energy shifting according to spacecraft potential. We suggest that the complex structure of the electron spectrum observed can be explained entirely by photoelectron production in the plume ionosphere.

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

NASA Astrophysics Data System (ADS)

Xiang, An; Xu, Xingliang; Zhang, Lin; Li, Zhiqiang; Li, Juntao; Dai, Gang

2018-02-01

The conduction of current from n-4H-SiC into pyrogenic and dry oxidized films is studied. Anomalous current conduction was observed at a high electric field above 8 MV/cm for dry oxidized metal-oxide-semiconductor (MOS) capacitors, which cannot be interpreted in the framework of pure Fowler-Nordheim tunneling. The temperature-dependent current measurement and density of interface trap estimated from the hi-lo method for the SiO2/4H-SiC interface revealed that the combined current conduction of Fowler-Nordheim and Poole-Frenkel emission is responsible for the current conduction in both pyrogenic and dry oxidized MOS capacitors. Furthermore, the origin of temperature dependent current conduction is the Poole-Frenkel emission via the carbon pair defect trap level at 1.3 eV below the conduction band edge of SiO2. In addition, with the dry oxidized capacitors, the enhanced temperature dependent current above 8 MV/cm is attributed to the PF emission via a trap level at 1.47 eV below the conduction band edge of SiO2, which corresponds to another configuration of a carbon pair defect in SiO2 films.

Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

NASA Astrophysics Data System (ADS)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-04-01

The effects of hole injection in amorphous indium-gallium-zinc-oxide (a-IGZO) are analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusion energy barrier (of at least 0.6 eV). Their diffusion mechanism can be mediated by the presence of hydrogen. The capture of these holes is correlated with the low off-current observed for a-IGZO transistors, as well as with the difficulty to obtain a p-type conductivity. The results further support the formation of peroxides as being the root cause of Negative Bias Illumination Stress (NBIS). The strong self-trapping substantially reduces the injection of holes from the contact and limits the creation of peroxides from a direct hole injection. In the presence of light, the concentration of holes substantially rises and mediates the creation of peroxides, responsible for NBIS.

Dissociative attachment of electrons to N2O

NASA Technical Reports Server (NTRS)

Krishnakumar, E.; Srivastava, S. K.

1990-01-01

Cross sections for the production of O(-) from N2O by the process of dissociative electron attachment have been measured for electron-impact energies ranging from 0 to 50 eV. Three new O(-) peaks are observed. The present data above 5-eV electron-impact energy differ considerably from the previous measurements.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

NASA Astrophysics Data System (ADS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-03-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Ab initio molecular dynamics calculations on scattering of hyperthermal H atoms from Cu(111) and Au(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroes, Geert-Jan, E-mail: g.j.kroes@chem.leidenuniv.nl; Pavanello, Michele; Blanco-Rey, María

2014-08-07

Energy loss from the translational motion of an atom or molecule impinging on a metal surface to the surface may determine whether the incident particle can trap on the surface, and whether it has enough energy left to react with another molecule present at the surface. Although this is relevant to heterogeneous catalysis, the relative extent to which energy loss of hot atoms takes place to phonons or electron-hole pair (ehp) excitation, and its dependence on the system's parameters, remain largely unknown. We address these questions for two systems that present an extreme case of the mass ratio of themore » incident atom to the surface atom, i.e., H + Cu(111) and H + Au(111), by presenting adiabatic ab initio molecular dynamics (AIMD) predictions of the energy loss and angular distributions for an incidence energy of 5 eV. The results are compared to the results of AIMDEFp calculations modeling energy loss to ehp excitation using an electronic friction (“EF”) model applied to the AIMD trajectories, so that the energy loss to the electrons is calculated “post” (“p”) the computation of the AIMD trajectory. The AIMD calculations predict average energy losses of 0.38 eV for Cu(111) and 0.13-0.14 eV for Au(111) for H-atoms that scatter from these surfaces without penetrating the surface. These energies closely correspond with energy losses predicted with Baule models, which is suggestive of structure scattering. The predicted adiabatic integral energy loss spectra (integrated over all final scattering angles) all display a lowest energy peak at an energy corresponding to approximately 80% of the average adiabatic energy loss for non-penetrative scattering. In the adiabatic limit, this suggests a way of determining the approximate average energy loss of non-penetratively scattered H-atoms from the integral energy loss spectrum of all scattered H-atoms. The AIMDEFp calculations predict that in each case the lowest energy loss peak should show additional energy loss in the range 0.2-0.3 eV due to ehp excitation, which should be possible to observe. The average non-adiabatic energy losses for non-penetrative scattering exceed the adiabatic losses to phonons by 0.9-1.0 eV. This suggests that for scattering of hyperthermal H-atoms from coinage metals the dominant energy dissipation channel should be to ehp excitation. These predictions can be tested by experiments that combine techniques for generating H-atom beams that are well resolved in translational energy and for detecting the scattered atoms with high energy-resolution.« less

Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

NASA Astrophysics Data System (ADS)

Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Monemar, Bo; Janzén, Erik; Hemmingsson, Carl

2016-07-01

Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition (MOCVD), undoped GaN grown by MOCVD, and halide vapor phase epitaxy (HVPE)-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy on Schottky diodes. One hole trap, labeled HT1, was detected in the Mg-doped sample. It is observed that the hole emission rate of the trap is enhanced by increasing electric field. By fitting four different theoretical models for field-assisted carrier emission processes, the three-dimensional Coulombic Poole-Frenkel (PF) effect, three-dimensional square well PF effect, phonon-assisted tunneling, and one-dimensional Coulombic PF effect including phonon-assisted tunneling, it is found that the one-dimensional Coulombic PF model, including phonon-assisted tunneling, is consistent with the experimental data. Since the trap exhibits the PF effect, we suggest it is acceptorlike. From the theoretical model, the zero field ionization energy of the trap and an estimate of the hole capture cross section have been determined. Depending on whether the charge state is -1 or -2 after hole emission, the zero field activation energy Ei 0 is 0.57 eV or 0.60 eV, respectively, and the hole capture cross section σp is 1.3 ×10-15c m2 or 1.6 ×10-16c m2 , respectively. Since the level was not observed in undoped GaN, it is suggested that the trap is associated with an Mg related defect.

Revision of the experimental electron affinity of BO

NASA Astrophysics Data System (ADS)

Rienstra, Jonathan C.; Schaefer, Henry F., III

1997-05-01

The experimental electron affinity of BO has proven questionable. We obtained the electron affinity of BO using the large aug-cc-pVQZ basis with SCF, CISD, CISD+Q, CCSD, and CCSD(T) methods and predict a value of 2.57 eV, or 0.55 eV smaller than the latest experimental value. The 2∑+ to 2Π excitation energy of BO has also been obtained with the CCSD(T) method and found to be 2.82 eV.

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2012 CFR

2012-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

Mid-Gap States and Normal vs Inverted Bonding in Luminescent Cu+- and Ag+-Doped CdSe Nanocrystals.

PubMed

Nelson, Heidi D; Hinterding, Stijn O M; Fainblat, Rachel; Creutz, Sidney E; Li, Xiaosong; Gamelin, Daniel R

2017-05-10

Mid-gap luminescence in copper (Cu + )-doped semiconductor nanocrystals (NCs) involves recombination of delocalized conduction-band electrons with copper-localized holes. Silver (Ag + )-doped semiconductor NCs show similar mid-gap luminescence at slightly (∼0.3 eV) higher energy, suggesting a similar luminescence mechanism, but this suggestion appears inconsistent with the large difference between Ag + and Cu + ionization energies (∼1.5 eV), which should make hole trapping by Ag + highly unfavorable. Here, Ag + -doped CdSe NCs (Ag + :CdSe) are studied using time-resolved variable-temperature photoluminescence (PL) spectroscopy, magnetic circularly polarized luminescence (MCPL) spectroscopy, and time-dependent density functional theory (TD-DFT) to address this apparent paradox. In addition to confirming that Ag + :CdSe and Cu + :CdSe NCs display similar broad PL with large Stokes shifts, we demonstrate that both also show very similar temperature-dependent PL lifetimes and magneto-luminescence. Electronic-structure calculations further predict that both dopants generate similar localized mid-gap states. Despite these strong similarities, we conclude that these materials possess significantly different electronic structures. Specifically, whereas photogenerated holes in Cu + :CdSe NCs localize primarily in Cu(3d) orbitals, formally oxidizing Cu + to Cu 2+ , in Ag + :CdSe NCs they localize primarily in 4p orbitals of the four neighboring Se 2- ligands, and Ag + is not oxidized. This difference reflects a shift from "normal" to "inverted" bonding going from Cu + to Ag + . The spectroscopic similarities are explained by the fact that, in both materials, photogenerated holes are localized primarily within covalent [MSe 4 ] dopant clusters (M = Ag + , Cu + ). These findings reconcile the similar spectroscopies of Ag + - and Cu + -doped semiconductor NCs with the vastly different ionization potentials of their Ag + and Cu + dopants.

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Jie; Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

2013-10-01

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping.

Development and field evaluation of the sentinel mosquito arbovirus capture kit (SMACK).

PubMed

Johnson, Brian J; Kerlin, Tim; Hall-Mendelin, Sonja; van den Hurk, Andrew F; Cortis, Giles; Doggett, Stephen L; Toi, Cheryl; Fall, Ken; McMahon, Jamie L; Townsend, Michael; Ritchie, Scott A

2015-10-06

Although sentinel animals are used successfully throughout the world to monitor arbovirus activity, ethical considerations and cross-reactions in serological assays highlight the importance of developing viable alternatives. Here we outline the development of a passive sentinel mosquito arbovirus capture kit (SMACK) that allows for the detection of arboviruses on honey-baited nucleic acid preservation cards (Flinders Technology Associates; FTA®) and has a similar trap efficacy as standard light traps in our trials. The trap efficacy of the SMACK was assessed against Centers for Disease Control and Prevention (CDC) miniature light traps (standard and ultraviolet) and the Encephalitis Vector Survey (EVS) trap in a series of Latin square field trials conducted in North Queensland, Australia. The ability of the SMACK to serve as a sentinel arbovirus surveillance tool was assessed in comparison to Passive Box Traps (PBT) during the 2014 wet season in the Cairns, Australia region and individually in the remote Northern Peninsula Area (NPA) of Australia during the 2015 wet season. The SMACK caught comparable numbers of mosquitoes to both CDC light traps (mean capture ratio 0.86: 1) and consistently outperformed the EVS trap (mean capture ratio 2.28: 1) when CO2 was supplied by either a gas cylinder (500 ml/min) or dry ice (1 kg). During the 2014 arbovirus survey, the SMACK captured significantly (t 6 = 2.1, P = 0.04) more mosquitoes than the PBT, and 2 and 1 FTA® cards were positive for Ross River virus and Barmah Forest virus, respectively, while no arboviruses were detected from PBTs. Arbovirus activity was detected at all three surveillance sites during the NPA survey in 2015 and ca. 27 % of FTA® cards tested positive for either Murray Valley encephalitis virus (2 detections), West Nile virus (Kunjin subtype; 13 detections), or both viruses on two occasions. These results demonstrate that the SMACK is a versatile, simple, and effective passive arbovirus surveillance tool that may also be used as a traditional overnight mosquito trap and has the potential to become a practical substitute for sentinel animal programs.

Electron Correlation in Oxygen Vacancy in SrTiO3

NASA Astrophysics Data System (ADS)

Lin, Chungwei; Demkov, Alexander A.

2014-03-01

Oxygen vacancies are an important type of defect in transition metal oxides. In SrTiO3 they are believed to be the main donors in an otherwise intrinsic crystal. At the same time, a relatively deep gap state associated with the vacancy is widely reported. To explain this inconsistency we investigate the effect of electron correlation in an oxygen vacancy (OV) in SrTiO3. When taking correlation into account, we find that the OV-induced localized level can at most trap one electron, while the second electron occupies the conduction band. Our results offer a natural explanation of how the OV in SrTiO3 can produce a deep in-gap level (about 1 eV below the conduction band bottom) in photoemission, and at the same time be an electron donor. Our analysis implies an OV in SrTiO3 should be fundamentally regarded as a magnetic impurity, whose deep level is always partially occupied due to the strong Coulomb repulsion. An OV-based Anderson impurity model is derived, and its implications are discussed. This work was supported by Scientific Discovery through Advanced Computing (SciDAC) program funded by U.S. Department of Energy, Office of Science, Advanced Scientific Computing Research and Basic Energy Sciences under award number DESC0008877.

A Dust Grain Photoemission Experiment

NASA Technical Reports Server (NTRS)

Venturini, C. C.; Spann, J. F., Jr.; Abbas, M. M.; Comfort, R. H.

2000-01-01

A laboratory experiment has been developed at Marshall Space Flight Center to study the interaction of micron-sized particles with plasmas and FUV radiation. The intent is to investigate the conditions under which particles of various compositions and sizes become charged, or discharged, while exposed to an electron beam and/or UV radiation. This experiment uses a unique laboratory where a single charged micron size particle is suspended in a quadrupole trap and then subjected to a controlled environment. Tests are performed using different materials and sizes, ranging from 10 microns to 1 micron, to determine the particle's charge while being subjected to an electron beam and /or UV radiation. The focus of this presentation will be on preliminary results from UV photoemission tests, but past results from electron beam, secondary electron emission tests will also be highlighted. A monochromator is used to spectrally resolve UV in the 120 nm to 300 nm range. This enables photoemission measurements as a function of wavelength. Electron beam tests are conducted using I to 3 micron sized aluminum oxide particles subjected to energies between 100 eV to 3 KeV. It was found that for both positive and negative particles the potential tended toward neutrality over time with possible equilibrium potentials between -0.8 Volts and 0.8 Volts.

DNA strand breaks and crosslinks induced by transient anions in the range 2-20 eV.

PubMed

Luo, Xinglan; Zheng, Yi; Sanche, Léon

2014-04-15

The energy dependence of the yields of single and double strand breaks (SSB and DSB) and crosslinks induced by electron impact on plasmid DNA films is measured in the 2-20 eV range. The yield functions exhibit two strong maxima, which are interpreted to result from the formation of core-excited resonances (i.e., transient anions) of the bases, and their decay into the autoionization channel, resulting in π → π * electronic transitions of the bases followed by electron transfer to the C-O σ * bond in the phosphate group. Occupancy of the σ * orbital ruptures the C-O bond of the backbone via dissociative electron attachment, producing a SSB. From a comparison of our results with those of other works, including theoretical calculations and electron-energy-loss spectra of the bases, the 4.6 eV peak in the SSB yield function is attributed to the resonance decay into the lowest electronically excited states of the bases; in particular, those resulting from the transitions 1 3 A'( π 2 → π 3 *) and 1 3 A″(n 2 → π 3 *) of thymine and 1 3 A'( π → π *) of cytosine. The strongest peak at 9.6 eV in the SSB yield function is also associated with electron captured by excited states of the bases, resulting mostly from a multitude of higher-energy π → π * transitions. The DSB yield function exhibits strong maxima at 6.1 and 9.6 eV. The peak at 9.6 eV is probably related to the same resonance manifold as that leading to SSB, but the other at 6.1 eV may be more restricted to decay into the electronic state 1 3 A' ( π → π *) of cytosine via autoionization. The yield function of crosslinks is dominated by a broad peak extending over the 3.6-11.6 eV range with a sharper one at 17.6 eV. The different line shape of the latter function, compared to that of SSB and DSB, appears to be due to the formation of reactive radical sites in the initial supercoiled configuration of the plasmid, which react with the circular form (i.e., DNA with a SSB) to produce a crosslink.

Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2017-01-01

The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown ( tBD and QBD ) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field ( 1 /E ) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10-year projected lifetime of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC under positive bias on the n+-polySi gate. Furthermore, the projected maximum operating oxide field was little higher in metal gate devices compared to n+-polySi gate devices having an identically thick thermal SiO2 films under PBTS.

Electrochemical control over photoinduced electron transfer and trapping in CdSe-CdTe quantum-dot solids.

PubMed

Boehme, Simon C; Walvis, T Ardaan; Infante, Ivan; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Houtepen, Arjan J

2014-07-22

Understanding and controlling charge transfer between different kinds of colloidal quantum dots (QDs) is important for devices such as light-emitting diodes and solar cells and for thermoelectric applications. Here we study photoinduced electron transfer between CdTe and CdSe QDs in a QD film. We find that very efficient electron trapping in CdTe QDs obstructs electron transfer to CdSe QDs under most conditions. Only the use of thiol ligands results in somewhat slower electron trapping; in this case the competition between trapping and electron transfer results in a small fraction of electrons being transferred to CdSe. However, we demonstrate that electron trapping can be controlled and even avoided altogether by using the unique combination of electrochemistry and transient absorption spectroscopy. When the Fermi level is raised electrochemically, traps are filled with electrons and electron transfer from CdTe to CdSe QDs occurs with unity efficiency. These results show the great importance of knowing and controlling the Fermi level in QD films and open up the possibility of studying the density of trap states in QD films as well as the systematic investigation of the intrinsic electron transfer rates in donor-acceptor films.

Hydration of excess electrons trapped in charge pockets on molecular surfaces

NASA Astrophysics Data System (ADS)

Jalbout, Abraham F.; Del Castillo, R.; Adamowicz, Ludwik

2007-01-01

In this work we strive to design a novel electron trap located on a molecular surface. The process of electron trapping involves hydration of the trapped electron. Previous calculations on surface electron trapping revealed that clusters of OH groups can form stable hydrogen-bonded networks on one side of a hydrocarbon surface (i.e. cyclohexane sheets), while the hydrogen atoms on the opposite side of the surface form pockets of positive charge that can attract extra negative charge. The excess electron density on such surfaces can be further stabilized by interactions with water molecules. Our calculations show that these anionic systems are stable with respect to vertical electron detachment (VDE).

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Enhancement of green long lasting phosphorescence in CaSnO3:Tb3+ by addition of alkali ions

NASA Astrophysics Data System (ADS)

Liang, Zuoqiu; Zhang, Jinsu; Sun, Jiashi; Li, Xiangping; Cheng, Lihong; Zhong, Haiyang; Fu, Shaobo; Tian, Yue; Chen, Baojiu

2013-03-01

Long lasting phosphors of CaSnO3:Tb3+ added alkali ions (Li+, Na+, K+) were prepared by solid-state reaction. The phosphorescence of samples consists of a group of green emission lines originating from 5D4→7FJ transitions of Tb3+. The afterglow spectra and concentration quenching behaviors of fluorescence were investigated in the Tb3+ mono-doped sample. The result shows the optimal doping concentration of Tb3+ is 0.3 mol%. In the co-doped samples, the doping concentrations of Tb3+ and alkali ions are both at 0.3 mol%. It is found from the afterglow decay curves that the introduction of alkali ions can prolong the phosphorescent lasting time and the sample of incorporating Na+ shows the best result. Tb3+ and alkali ions can substitute Ca2+ ions, acting as hole and electron traps, respectively. The thermoluminescence (TL) spectra are also investigated. The depths of traps for the mono- and co-doped samples are calculated to be 0.622, 0.541, 0.529 and 0.538 eV, respectively. Moreover, the possible mechanism of the green long lasting phosphorescence is proposed based on the experiment results.

Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

NASA Astrophysics Data System (ADS)

Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

2018-05-01

This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

Absolute cross sections for electronic excitation of condensed tetrahydrofuran (THF) by 11-16 eV electrons.

PubMed

Lemelin, V; Bass, A D; Cloutier, P; Sanche, L

2016-11-07

Absolute cross section (CS) data on the interaction of low energy electrons with DNA and its molecular constituents are required as input parameters in Monte-Carlo type simulations, for several radiobiological applications. Previously [V. Lemelin et al., J. Chem. Phys. 144, 074701 (2016)], we measured absolute vibrational CSs for low-energy electron scattering from condensed tetrahydrofuran, a convenient surrogate for the deoxyribose. Here we report absolute electronic CSs for energy losses of between 6 and 11.5 eV, by electrons with energies between 11 and 16 eV. The variation of these CSs with incident electron energy shows no evidence of transient anion states, consistent with theoretical and other experimental results, indicating that initial electron capture leading to DNA strand breaks occurs primarily on DNA bases or the phosphate group.

Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions

NASA Astrophysics Data System (ADS)

Singh, Pooja; Rout, P. K.; Singh, Manju; Rakshit, R. K.; Dogra, Anjana

2015-09-01

We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal-ferroelectric semiconductor junctions. The current (I)-voltage (V) measurements across the junctions comprising of 20-500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (<0.65 eV) below conduction band with increasing thickness. Moreover, the observed hysteresis in I-V curves implies a bipolar resistive switching behaviour, which can be explained in terms of charge trapping and de-trapping process.

Silicon Detector System for High Rate EXAFS Applications.

PubMed

Pullia, A; Kraner, H W; Siddons, D P; Furenlid, L R; Bertuccio, G

1995-08-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Silicon Detector System for High Rate EXAFS Applications

PubMed Central

Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, L. R.; Bertuccio, G.

2015-01-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at −35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at −35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications. PMID:26538683

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

NASA Technical Reports Server (NTRS)

Danchenko, V.; Brashears, S. S.; Fang, P. H.

1984-01-01

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Correlation between energy deposition and molecular damage from Auger electrons: A case study of ultra-low energy (5–18 eV) electron interactions with DNA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rezaee, Mohammad, E-mail: Mohammad.Rezaee@USherbrooke.ca; Hunting, Darel J.; Sanche, Léon

2014-07-15

Purpose: The present study introduces a new method to establish a direct correlation between biologically related physical parameters (i.e., stopping and damaging cross sections, respectively) for an Auger-electron emitting radionuclide decaying within a target molecule (e.g., DNA), so as to evaluate the efficacy of the radionuclide at the molecular level. These parameters can be applied to the dosimetry of Auger electrons and the quantification of their biological effects, which are the main criteria to assess the therapeutic efficacy of Auger-electron emitting radionuclides. Methods: Absorbed dose and stopping cross section for the Auger electrons of 5–18 eV emitted by{sup 125}I withinmore » DNA were determined by developing a nanodosimetric model. The molecular damages induced by these Auger electrons were investigated by measuring damaging cross section, including that for the formation of DNA single- and double-strand breaks. Nanoscale films of pure plasmid DNA were prepared via the freeze-drying technique and subsequently irradiated with low-energy electrons at various fluences. The damaging cross sections were determined by employing a molecular survival model to the measured exposure–response curves for induction of DNA strand breaks. Results: For a single decay of{sup 125}I within DNA, the Auger electrons of 5–18 eV deposit the energies of 12.1 and 9.1 eV within a 4.2-nm{sup 3} volume of a hydrated or dry DNA, which results in the absorbed doses of 270 and 210 kGy, respectively. DNA bases have a major contribution to the deposited energies. Ten-electronvolt and high linear energy transfer 100-eV electrons have a similar cross section for the formation of DNA double-strand break, while 100-eV electrons are twice as efficient as 10 eV in the induction of single-strand break. Conclusions: Ultra-low-energy electrons (<18 eV) substantially contribute to the absorbed dose and to the molecular damage from Auger-electron emitting radionuclides; hence, they should be considered in the dosimetry calculation of such radionuclides. Moreover, absorbed dose is not an appropriate physical parameter for nanodosimetry. Instead, stopping cross section, which describes the probability of energy deposition in a target molecule can be an appropriate nanodosimetric parameter. The stopping cross section is correlated with a damaging cross section (e.g., cross section for the double-strand break formation) to quantify the number of each specific lesion in a target molecule for each nuclear decay of a single Auger-electron emitting radionuclide.« less

Correlation between energy deposition and molecular damage from Auger electrons: A case study of ultra-low energy (5–18 eV) electron interactions with DNA

PubMed Central

Rezaee, Mohammad; Hunting, Darel J.; Sanche, Léon

2015-01-01

Purpose The present study introduces a new method to establish a direct correlation between biologically related physical parameters (i.e., stopping and damaging cross sections, respectively) for an Auger-electron emitting radionuclide decaying within a target molecule (e.g., DNA), so as to evaluate the efficacy of the radionuclide at the molecular level. These parameters can be applied to the dosimetry of Auger electrons and the quantification of their biological effects, which are the main criteria to assess the therapeutic efficacy of Auger-electron emitting radionuclides. Methods Absorbed dose and stopping cross section for the Auger electrons of 5–18 eV emitted by 125I within DNA were determined by developing a nanodosimetric model. The molecular damages induced by these Auger electrons were investigated by measuring damaging cross section, including that for the formation of DNA single- and double-strand breaks. Nanoscale films of pure plasmid DNA were prepared via the freeze-drying technique and subsequently irradiated with low-energy electrons at various fluences. The damaging cross sections were determined by employing a molecular survival model to the measured exposure–response curves for induction of DNA strand breaks. Results For a single decay of 125I within DNA, the Auger electrons of 5–18 eV deposit the energies of 12.1 and 9.1 eV within a 4.2-nm3 volume of a hydrated or dry DNA, which results in the absorbed doses of 270 and 210 kGy, respectively. DNA bases have a major contribution to the deposited energies. Ten-electronvolt and high linear energy transfer 100-eV electrons have a similar cross section for the formation of DNA double-strand break, while 100-eV electrons are twice as efficient as 10 eV in the induction of single-strand break. Conclusions Ultra-low-energy electrons (<18 eV) substantially contribute to the absorbed dose and to the molecular damage from Auger-electron emitting radionuclides; hence, they should be considered in the dosimetry calculation of such radionuclides. Moreover, absorbed dose is not an appropriate physical parameter for nanodosimetry. Instead, stopping cross section, which describes the probability of energy deposition in a target molecule can be an appropriate nanodosimetric parameter. The stopping cross section is correlated with a damaging cross section (e.g., cross section for the double-strand break formation) to quantify the number of each specific lesion in a target molecule for each nuclear decay of a single Auger-electron emitting radionuclide. PMID:24989405

Electron scattering by molecules. II - Experimental methods and data

NASA Technical Reports Server (NTRS)

Trajmar, S.; Chutjian, A.; Register, D. F.

1983-01-01

Experimental techniques for measuring electron-molecule collision cross sections are briefly summarized. A survey of the available experimental cross section data is presented. The emphasis here is on elastic scattering, rotational, vibrational and electronic excitations, total electron scattering, and momentum transfer in the few eV to few hundred eV impact energy range. Reference is made to works concerned with high energy electron scattering, innershell and multi-electron excitations, conicidence methods and electron scattering in laser fields.

Miniaturized magnet-less RF electron trap. II. Experimental verification

DOE PAGES

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.; ...

2017-06-15

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Production of negative ions by dissociative electron attachment to SO2

NASA Technical Reports Server (NTRS)

Orient, O. J.; Srivastava, S. K.

1983-01-01

Dissociative electron attachment cross section measurements for the production of O(-), S(-), and SO(-) have been performed utilizing a crossed target SO2 molecule beam-electron beam geometry. The relative flow technique is employed to determine the absolute values of cross sections. The attachment energies corresponding to various cross section maxima are: 4.30 and 7.1 eV for O(-)/SO2; 4.0, 7.5, and 8.9 eV for S(-)/SO2, and 4.7 and 7.5 eV for SO(-)/SO2.

Electron energy-loss spectra in molecular fluorine

NASA Technical Reports Server (NTRS)

Nishimura, H.; Cartwright, D. C.; Trajmar, S.

1979-01-01

Electron energy-loss spectra in molecular fluorine, for energy losses from 0 to 17.0 eV, have been taken at incident electron energies of 30, 50, and 90 eV and scattering angles from 5 to 140 deg. Features in the spectra above 11.5 eV energy loss agree well with the assignments recently made from optical spectroscopy. Excitations of many of the eleven repulsive valence excited electronic states are observed and their location correlates reasonably well with recent theoretical results. Several of these excitations have been observed for the first time and four features, for which there are no identifications, appear in the spectra.

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P.

2013-11-25

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Pentacene Schottky diodes studied by impedance spectroscopy: Doping properties and trap response

NASA Astrophysics Data System (ADS)

Pahner, Paul; Kleemann, Hans; Burtone, Lorenzo; Tietze, Max L.; Fischer, Janine; Leo, Karl; Lüssem, Björn

2013-11-01

We study doping properties and charge carrier trap distributions in pentacene Schottky diodes doped by the fluorinated fullerene derivate C60F36 and 2,2'-(perdiylidene)dimalononitrile (F6-TCNNQ) upon small signal excitation. We show that the charge carrier depletion zones present in these Schottky diodes are tunable by the applied bias and temperature. Mott-Schottky evaluations yield reduced doping efficiencies and dopant activation energies between 19 and 54 meV. In the low-frequency regime, we resolve additional capacitive contributions from inherent charge carrier traps. A Gaussian distributed trap center 0.6 eV above the hole transport level with a density in the range of 1016 cm-3 depending on the material purity is found to be an intrinsic feature of the pentacene matrix. Upon doping, the deep Gaussian trap center saturates in density and broad exponentially tailing trap distributions arise. Subsequent ultraviolet photoelectron spectroscopy measurements are conducted to inspect for energetic broadening due to doping.

Ultrafast excited-state relaxation of a binuclear Ag(i) phosphine complex in gas phase and solution.

PubMed

Kruppa, S V; Bäppler, F; Klopper, W; Walg, S P; Thiel, W R; Diller, R; Riehn, C

2017-08-30

The binuclear complex [Ag 2 (dcpm) 2 ](PF 6 ) 2 (dcpm = bis(dicyclohexylphosphino)methane) exhibits a structure with a close silver-silver contact mediated by the bridging ligand and thus a weak argentophilic interaction. Upon electronic excitation this cooperative effect is strongly increased and determines the optical and luminescence properties of the compound. We have studied here the ultrafast electronic dynamics in parallel in gas phase by transient photodissociation and in solution by transient absorption. In particular, we report the diverse photofragmentation pathways of isolated [Ag 2 (dcpm) 2 ] 2+ in an ion trap and its gas phase UV photodissociation spectrum. By pump-probe fragmentation action spectroscopy (λ ex = 260 nm) in the gas phase, we have obtained fragment-specific transients which exhibit a common ultrafast multiexponential decay. This is fitted to four time constants (0.6/5.8/100/>1000 ps), highlighting complex intrinsic photophysical processes. Remarkably, multiexponential dynamics (0.9/8.5/73/604 ps) are as well found for the relaxation dynamics in acetonitrile solution. Ab initio calculations at the level of approximate coupled-cluster singles-doubles (CC2) theory of ground and electronically excited states of the reduced model system [Ag 2 (dmpm) 2 ] 2+ (dmpm = bis(dimethylphosphino)methane) indicate a shortening of the Ag-Ag distance upon excitation by 0.3-0.4 Å. In C 2 geometry two close-lying singlet states S 1 ( 1 MC(dσ*-pπ), 1 B, 4.13 eV) and S 2 ( 1 MC(dσ*-pσ), 1 A, 4.45 eV) are found. The nearly dark S 1 state has not been reported so far. The excitation of the S 2 state carries a large oscillator strength for the calculated vertical transition (266 nm). Two related triplets are calculated at T 1 (3.87 eV) and T 2 (3.90 eV). From these findings we suggest possible relaxation pathways with the two short time constants ascribed to ISC/IVR and propose from the obtained similar values in gas phase that the fast solution dynamics is dominated by intramolecular processes. A further relaxation by IC/IVR in the triplet manifold is likely to account for the observed intermediate time constants. For the acetonitrile relaxation dynamics additional modifications are invoked based on solvent-induced shifts of the energy levels and the possible formation of solvent and counterion exciplexes on a longer timescale.

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

NASA Astrophysics Data System (ADS)

Wen, Xixing; Zeng, Xiangbin; Zheng, Wenjun; Liao, Wugang; Feng, Feng

2015-01-01

The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices.

New progress of high current gasdynamic ion source (invited).

PubMed

Skalyga, V; Izotov, I; Golubev, S; Sidorov, A; Razin, S; Vodopyanov, A; Tarvainen, O; Koivisto, H; Kalvas, T

2016-02-01

The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)-the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 10(13) cm(-3)) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10(-4)-10(-3) mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments.

Electron Effective-Attenuation-Length Database

National Institute of Standards and Technology Data Gateway

SRD 82 NIST Electron Effective-Attenuation-Length Database (PC database, no charge)   This database provides values of electron effective attenuation lengths (EALs) in solid elements and compounds at selected electron energies between 50 eV and 2,000 eV. The database was designed mainly to provide EALs (to account for effects of elastic-eletron scattering) for applications in surface analysis by Auger-electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS).

The electron affinities of C{sub 3}O and C{sub 4}O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rienstra-Kiracofe, J.C.; Ellison, G.B.; Hoffman, B.C.

The authors predict the adiabatic electron affinities of C{sub 3}O and C{sub 4}O based on electronic structure calculations, using a large triple-{zeta} basis set with polarization and diffuse functions (TZ2Pf+diff) with the SCF, CCSD, and CCSD(T) methods as well as with the aug-cc-pVDZ and aug-cc-pVTZ basis sets. The results imply electron affinities for C{sub 3}O and C{sub 4}O; EA(C{sub 3}O) = 0.93 eV {+-} 0.10 and EA(C{sub 4}O) = 2.99 {+-} 0.10. The EA(C{sub 3}O) is 0.41 eV lower than the experimental value of 1.34 {+-} 0.15 eV, while the EA(C{sub 4}O) is 0.94 eV higher than the experimental valuemore » of 2.05 {+-} 0.15 eV. Optimized geometries for all species at each level of theory are given, and harmonic vibrational frequencies are reported at the SCF/TZ2Pf+diff and CCSD/aug-cc-pVDZ levels.« less

Electron impact excitation of the merocyanine molecule in the gas phase

NASA Astrophysics Data System (ADS)

Kulinich, A. V.; Ishchenko, A. A.; Kukhta, I. N.; Mitryukhin, L. K.; Kazakov, S. M.; Kukhta, A. V.

2018-03-01

Electronic transitions in a merocyanine dye were studied in the gas phase using electron energy loss spectroscopy and compared with the optical absorption spectra. It was found that the most intense band of the S1 ← S0 polymethine transition lies at 2.8 eV in vapor and 2.4 eV in n-hexane. Higher electronic transitions in the range of 3.7-7 eV were also analyzed. Besides, the singlet-triplet transition was revealed near 1.8 eV. TDDFT simulation of singlet-singlet transitions in the studied molecule was performed using B97D3, B3LYP, B3PW91 and wB97xD functionals. The calculated energy of the long-wavelength transition is closest to the experimental value with the latter. Other functionals result in the energy 0.2-0.4 eV exceeding experimental. The interpretation of higher transitions/bands is complicated due to their superposition and difference between experimental and calculated data. The excitation anisotropy spectra were measured in glycerol for more reliable determination of higher transitions and comparison with the TDDFT/PCM simulation.

Time of flight spectrometer for background-free positron annihilation induced Auger electron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukherjee, S.; Shastry, K.; Anto, C. V.

2016-03-15

We describe a novel spectrometer designed for positron annihilation induced Auger electron spectroscopy employing a time-of-flight spectrometer. The spectrometer’s new configuration enables us to implant monoenergetic positrons with kinetic energies as low as 1.5 eV on the sample while simultaneously allowing for the detection of electrons emitted from the sample surface at kinetic energies ranging from ∼500 eV to 0 eV. The spectrometer’s unique characteristics made it possible to perform (a) first experiments demonstrating the direct transition of a positron from an unbound scattering state to a bound surface state and (b) the first experiments demonstrating that Auger electron spectramore » can be obtained down to 0 eV without the beam induced secondary electron background obscuring the low energy part of the spectra. Data are presented which show alternative means of estimating positron surface state binding energy and background-free Auger spectra.« less

Analysis of multiple scattering contributions in electron-impact ionization of molecular hydrogen

NASA Astrophysics Data System (ADS)

Ren, Xueguang; Hossen, Khokon; Wang, Enliang; Pindzola, M. S.; Dorn, Alexander; Colgan, James

2017-10-01

We report a combined experimental and theoretical study on the low-energy (E 0 = 31.5 eV) electron-impact ionization of molecular hydrogen (H2). Triple differential cross sections are measured for a range of fixed emission angles of one outgoing electron between {θ }1=-70^\\circ and -130° covering the full 4π solid angle of the second electron. The energy sharing of the outgoing electrons varies from symmetric ({E}1={E}2=8 eV) to highly asymmetric (E 1 = 1 eV and E 2 = 15 eV). In addition to the binary and recoil lobes, a structure is observed perpendicular to the incoming beam direction which is due to multiple scattering of the projectile inside the molecular potential. The absolutely normalized experimental cross sections are compared with results from the time-dependent close-coupling (TDCC) calculations. Molecular alignment dependent TDCC results demonstrate that these structures are only present if the molecule axis is lying in the scattering plane.

Electron Excitation Cross Sections for the 2s(sup 2)2p(sup 3) (sup 4)S -> 2s(sup 2)2p(sup 3) (sup 2d) ->2s2p(sup 4) (sup 4p) (Resonance) Transitions in Oil

NASA Technical Reports Server (NTRS)

Zuo, M.; Smith, S.; Chutjian, A.; Williams, I.; Tayal, S.; McLaughlin, B.

1994-01-01

Experimental and theoretical excitation cross sections are reported for the first forbidden transition xxx and the first allowed (resonance) transition xxx in OII. Use is made of electron-energy loss and merged beams methods. The electron energy range covered is 3.33 eV (threshold) to 15 eV for the S->D transition, and 14.9 eV (threshold) to 40 eV for the S->P transition. Care was taken to assess and minimize the metastable fraction of the OII beam. An electron mirror was designed and tested to reflect inelastically back-scattered electrons into the forward direction to account for the full range of polar scattering angles. Comparisons are made between present experiments and 11-state R-Matrix calculations. Calculations are also presented for the xxx transition.

Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy n-GaAs

NASA Technical Reports Server (NTRS)

Partin, D. L.; Chen, J. W.; Milnes, A. G.; Vassamillet, L. F.

1979-01-01

The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.

Elastic electron differential cross sections for argon atom in the intermediate energy range from 40 eV to 300 eV

NASA Astrophysics Data System (ADS)

Ranković, Miloš Lj.; Maljković, Jelena B.; Tökési, Károly; Marinković, Bratislav P.

2018-02-01

Measurements and calculations for electron elastic differential cross sections (DCS) of argon atom in the energy range from 40 to 300 eV are presented. DCS have been measured in the crossed beam arrangement of the electron spectrometer with an energy resolution of 0.5 eV and angular resolution of 1.5∘ in the range of scattering angles from 20∘ to 126∘. Both angular behaviour and energy dependence of DCS are obtained in a separate sets of experiments, while the absolute scale is achieved via relative flow method, using helium as a reference gas. All data is corrected for the energy transmission function, changes of primary electron beam current and target pressure, and effective path length (volume correction). DCSs are calculated in relativistic framework by expressing the Mott's cross sections in partial wave expansion. Our results are compared with other available data.

Monte Carlo simulation of energy deposition by low-energy electrons in molecular hydrogen

NASA Technical Reports Server (NTRS)

Heaps, M. G.; Furman, D. R.; Green, A. E. S.

1975-01-01

A set of detailed atomic cross sections has been used to obtain the spatial deposition of energy by 1-20-eV electrons in molecular hydrogen by a Monte Carlo simulation of the actual trajectories. The energy deposition curve (energy per distance traversed) is quite peaked in the forward direction about the entry point for electrons with energies above the threshold of the electronic states, but the peak decreases and broadens noticeably as the electron energy decreases below 10 eV (threshold for the lowest excitable electronic state of H2). The curve also assumes a very symmetrical shape for energies below 10 eV, indicating the increasing importance of elastic collisions in determining the shape of the curve, although not the mode of energy deposition.

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

The Majorana Experiment:. a Straightforward Neutrino Mass Experiment Using the Double-Beta Decay of 76GE

NASA Astrophysics Data System (ADS)

Miley, H. S.

2004-04-01

The Majorana Experiment proposes to measure the effective mass of the electron neutrino to as low as 0.02 eV using well-tested technology. A half-life of about 4E27 y, corresponding to a mass range of [0.02 - 0.07] eV can be reached by operating 500 kg of germanium enriched to 86% in 76Ge deep underground. Radiological backgrounds of cosmogenic or primordial origin will be greatly reduced by ultra-low-background screening of detector, structural, and shielding materials, by chemical processing of materials, and by electronic rejection of multi-site events in the detector. Electronic background reduction is achieved with pulse-shape analysis, detector segmentation, and detector-to-detector coincidence rejection. Sensitivity calculations assuming worst-case germanium cosmogenic activation predict rapid growth in mass sensitivity (T1/2 at 90%CL) after the beginning of detector production: [0.08-0.28] eV at ~1 year, [0.04-0.14] eV at ~2.5 years, [0.03-0.10] eV at ~5 years, and [0.02 - 0.07] eV at ~10 years. The impact of primordial backgrounds in structural and electronic components is being studied at the 1 μBq/kg level, and appears to be controllable to below levels needed to attain these results.

Tunneling effect on double potential barriers GaAs and PbS

NASA Astrophysics Data System (ADS)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

High-resolution electron microscopy and electron energy-loss spectroscopy of giant palladium clusters

NASA Astrophysics Data System (ADS)

Oleshko, V.; Volkov, V.; Gijbels, R.; Jacob, W.; Vargaftik, M.; Moiseev, I.; van Tendeloo, G.

1995-12-01

Combined structural and chemical characterization of cationic polynuclear palladium coordination compounds Pd561L60(OAc)180, where L=1,10-phenantroline or 2,2'-bipyridine has been carried out by high-resolution electron microscopy (HREM) and analytical electron microscopy methods including electron energy-loss spectroscopy (EELS), zero-loss electron spectroscopic imaging, and energy-dispersive X-ray spectroscopy (EDX). The cell structure of the cluster matter with almost completely uniform metal core size distributions centered around 2.3 ±0.5 nm was observed. Zero-loss energy filtering allowed to improve the image contrast and resolution. HREM images showed that most of the palladium clusters had a cubo-octahedral shape. Some of them had a distorted icosahedron structure exhibiting multiple twinning. The selected-area electron diffraction patterns confirmed the face centered cubic structure with lattice parameter close to that of metallic palladium. The energy-loss spectra of the populations of clusters contained several bands, which could be assigned to the delayed Pd M4, 5-edge at 362 eV, the Pd M3-edge at 533 eV and the Pd M2-edge at 561 eV, the NK-edge at about 400 eV, the O K-edge at 532 eV overlapping with the Pd M3-edge and the carbon C K-edge at 284 eV. Background subtraction was applied to reveal the exact positions and fine structure of low intensity elemental peaks. EELS evaluations have been confirmed by EDX. The recorded series of the Pd M-edges and the N K-edge in the spectra of the giant palladium clusters obviously were related to Pd-Pd- and Pd-ligand bonding.

Electron Processing at 50 eV of Terphenylthiol Self-Assembled Monolayers: Contributions of Primary and Secondary Electrons.

PubMed

Houplin, Justine; Dablemont, Céline; Sala, Leo; Lafosse, Anne; Amiaud, Lionel

2015-12-22

Aromatic self-assembled monolayers (SAMs) can serve as platforms for development of supramolecular assemblies driven by surface templates. For many applications, electron processing is used to locally reinforce the layer. To achieve better control of the irradiation step, chemical transformations induced by electron impact at 50 eV of terphenylthiol SAMs are studied, with these SAMs serving as model aromatic SAMs. High-resolution electron energy loss spectroscopy (HREELS) and electron-stimulated desorption (ESD) of neutral fragment measurements are combined to investigate electron-induced chemical transformation of the layer. The decrease of the CH stretching HREELS signature is mainly attributed to dehydrogenation, without a noticeable hybridization change of the hydrogenated carbon centers. Its evolution as a function of the irradiation dose gives an estimate of the effective hydrogen content loss cross-section, σ = 2.7-4.7 × 10(-17) cm(2). Electron impact ionization is the major primary mechanism involved, with the impact electronic excitation contributing only marginally. Therefore, special attention is given to the contribution of the low-energy secondary electrons to the induced chemistry. The effective cross-section related to dissociative secondary electron attachment at 6 eV is estimated to be 1 order of magnitude smaller. The 1 eV electrons do not induce significant chemical modification for a 2.5 mC cm(-2) dose, excluding their contribution.

Comparison of VVV Auger electron spectra from single and multilayer graphene and graphite.

NASA Astrophysics Data System (ADS)

Chirayath, V. A.; Callewaert, V.; Fairchild, A. J.; Chrysler, M. D.; Gladen, R. W.; Imam, S. K.; Koymen, A. R.; Saniz, R.; Barbiellini, B.; Rajeshwar, K.; Partoens, B.; Weiss, A. H.

A direct observation of a low energy electron peak in the positron annihilation induced Auger electron spectra (PAES) from a single layer of graphene was made recently. A low energy positron beam (<1.25 eV) was used to deposit the positron on single layer graphene on a Cu substrate and the low energy peak was designated as VVV following the X-ray notation. The PAES signal is almost entirely from the top graphene layer due to the trapping of positrons in the image potential well on the surface of graphene. We utilize this monolayer sensitivity of PAES to compare the shape of the VVV Auger peak from the single layer graphene to the shapes of the VVV Auger peak obtained from multilayer graphene on Cu and from highly oriented pyrolytic graphite (HOPG). The VVV Auger peak from multilayer graphene on Cu and HOPG shows a systematic shift towards lower energies relative to the VVV Auger peak from the single layer graphene. The influence of the hole-hole interaction in distorting and shifting the VVV Auger spectra are discussed in relation to this observed shift. NSF Grant No. DMR 1508719 and DMR 1338130.

DNA strand breaks and crosslinks induced by transient anions in the range 2-20 eV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Xinglan; Zheng, Yi, E-mail: Yizheng@fzu.edu.cn; Sanche, Léon

2014-04-21

The energy dependence of the yields of single and double strand breaks (SSB and DSB) and crosslinks induced by electron impact on plasmid DNA films is measured in the 2-20 eV range. The yield functions exhibit two strong maxima, which are interpreted to result from the formation of core-excited resonances (i.e., transient anions) of the bases, and their decay into the autoionization channel, resulting in π → π{sup *} electronic transitions of the bases followed by electron transfer to the C–O σ{sup *} bond in the phosphate group. Occupancy of the σ{sup *} orbital ruptures the C–O bond of themore » backbone via dissociative electron attachment, producing a SSB. From a comparison of our results with those of other works, including theoretical calculations and electron-energy-loss spectra of the bases, the 4.6 eV peak in the SSB yield function is attributed to the resonance decay into the lowest electronically excited states of the bases; in particular, those resulting from the transitions 1{sup 3}A{sup ′} (π{sub 2} → π{sub 3}{sup *}) and 1{sup 3}A{sup ″} (n{sub 2} → π{sub 3}{sup *}) of thymine and 1{sup 3}A{sup ′} (π → π{sup *}) of cytosine. The strongest peak at 9.6 eV in the SSB yield function is also associated with electron captured by excited states of the bases, resulting mostly from a multitude of higher-energy π → π{sup *} transitions. The DSB yield function exhibits strong maxima at 6.1 and 9.6 eV. The peak at 9.6 eV is probably related to the same resonance manifold as that leading to SSB, but the other at 6.1 eV may be more restricted to decay into the electronic state 1{sup 3}A{sup ′} (π → π{sup *}) of cytosine via autoionization. The yield function of crosslinks is dominated by a broad peak extending over the 3.6-11.6 eV range with a sharper one at 17.6 eV. The different line shape of the latter function, compared to that of SSB and DSB, appears to be due to the formation of reactive radical sites in the initial supercoiled configuration of the plasmid, which react with the circular form (i.e., DNA with a SSB) to produce a crosslink.« less

Wide Bandgap Extrinsic Photoconductive Switches

NASA Astrophysics Data System (ADS)

Sullivan, James Stephen

Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The third generation vanadium compensated 6H-SiC has average impurity densities close to the recipe values. Extrinsic photoconductive switches constructed from the third generation vanadium compensated, 6H-SiC, 1 mm thick, 1 cm2, substrates have achieved high power operation at 16 kV with pulsed currents exceeding 1400 Amperes and a minimum on resistance of 1 ohm. The extrinsic photoconductive switch performance of the third generation 6H-SiC material was improved by a factor of up to 50 for excitation at the 532 nm wavelength compared to the initial 6H-SiC material. Switches based on this material have been incorporated into a prototype compact proton medical accelerator being developed by the Compact Particle Acceleration Corporation (CPAC). The vanadium compensated, 6H-SiC, extrinsic photoconductive switch operates differently when excited by 1064, or 532 nm, wavelength light. The 6H-SiC extrinsic photoconductive switch is a unipolar device when excited with 1064 nm light. The carriers are electrons excited from filled vanadium acceptor levels and other electron traps located within 1.17 eV of the conduction band. The switch is bipolar at 532 nm since the carriers consist of holes, as well as electrons. The holes are primarily generated by the excitation of valence band electrons into empty trap/acceptor levels and by two-photon absorption. Carrier generation by two-photon absorption becomes more important at high applied optical intensity at 532 nm and contributes to the supralinear behavior of switch conductance as a function of optical power. The 6H-SiC switch material is trap dominated at low nitrogen to vanadium ratios. The trap dominated vanadium compensated 6H-SiC exhibits low quantum efficiency when excited with 1064 and 532 nm light and has a carrier recombination time of ˜ 150 - 300 ps. The vanadium compensated 6H-SiC transitions to an impurity dominated material as the ratio of nitrogen to vanadium is increased to 0.5. The increased nitrogen doping produces a material with much higher quantum efficiency and carrier recombination time of 0.9 to 1.0 ns. The iron compensated 2H-GaN did not perform well as an extrinsic photoconductive switch. The density of carriers generated at 1064 nm was, low indicating that there were very few electrons trapped in the iron acceptor level located at 0.5 - 0.6 eV below the conduction band. Carrier generation at 532 nm was dominated by two photon absorption resulting in the switch conductance increasing as the square of applied optical intensity. A minimum switch resistance of 0.8 ohms was calculated for the 400 nm thick, 1.2 by 1.2 cm, 2H-GaN switch for an applied optical intensity of 41.25 MW/cm2. An optical intensity of ˜ 70 MW/cm2 at 532 nm would be required to achieve a 0.8 ohm on resistance for a 1 mm thick, 1 cm2, 2H-GaN switch.

Vortices for K-shell ionization of carbon by electron impact

NASA Astrophysics Data System (ADS)

Ward, S. J.; Macek, J. H.

2014-05-01

Using the Coulomb-Born approximation, we obtained a deep minimum in the TDCS for K-shell ionization of carbon by electron impact. The minimum is due to a vortex in the velocity field. We considered the electron to be ejected in the scattering plane, which we took to be the xz -plane. The minimum was obtained for the kinematics of an incident energy Ei = 1801 . 2 eV , scattering angle θf =4° , energy of ejected electron Ek = 5 . 5 eV , and angle of the ejected electron θk =239° . We analyzed the importance of various multipole components in an expansion of the Coulomb-Born T-matrix. We also considered the electron ejected out of the scattering plane for Ei = 1801 . 2 eV and θf =4° and located the positions of vortices for small but nonzero values of ky, the y - component of the momentum of the ejected electron. We constructed the vortex line for the kinematics of Ei = 1801 . 2 eV and θf =4° . S. J. W. and J. H. M. acknowledge support from NSF under grant no. PHYS- 0968638 and from D.O.E. under grant number DE-FG02-02ER15283, respectively.

Vibrational renormalisation of the electronic band gap in hexagonal and cubic ice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Engel, Edgar A., E-mail: eae32@cam.ac.uk; Needs, Richard J.; Monserrat, Bartomeu

2015-12-28

Electron-phonon coupling in hexagonal and cubic water ice is studied using first-principles quantum mechanical methods. We consider 29 distinct hexagonal and cubic ice proton-orderings with up to 192 molecules in the simulation cell to account for proton-disorder. We find quantum zero-point vibrational corrections to the minimum electronic band gaps ranging from −1.5 to −1.7 eV, which leads to improved agreement between calculated and experimental band gaps. Anharmonic nuclear vibrations play a negligible role in determining the gaps. Deuterated ice has a smaller band-gap correction at zero-temperature of −1.2 to −1.4 eV. Vibrations reduce the differences between the electronic band gapsmore » of different proton-orderings from around 0.17 eV to less than 0.05 eV, so that the electronic band gaps of hexagonal and cubic ice are almost independent of the proton-ordering when quantum nuclear vibrations are taken into account. The comparatively small reduction in the band gap over the temperature range 0 − 240 K of around 0.1 eV does not depend on the proton ordering, or whether the ice is protiated or deuterated, or hexagonal, or cubic. We explain this in terms of the atomistic origin of the strong electron-phonon coupling in ice.« less

Synthesis of crumpled nanosheets of polymeric carbon nitride from melamine cyanurate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dante, Roberto C., E-mail: rcdante@yahoo.com; Martín-Ramos, Pablo; Sánchez-Arévalo, F.M.

2013-05-01

Polymeric carbon nitride was synthesized by pyrolysis in nitrogen flux at different temperatures between 450 and 700 °C using melamine cyanurate as a reagent and sulfuric acid as a catalyst. The obtained carbon nitride consisted of curled nanosheets (650 °C), and globular particles (700 °C) with formula C₆N₇NHNH₂. The reaction yield of the catalyzed reaction was around the 15% for the sample treated at 700 °C, in a tapped crucible. The optical band gap of the polymer obtained at 700 °C is around 2.9 eV. The gap to the Fermi level is around 2 eV, considerably above the half ofmore » the band gap (due to electrons trapped in the gap), indicating that the polymer is probably a n-type semiconductor. - Graphical abstract: Transition from amorphous to crystalline carbon nitride, which is composed of globular particles and is a n-type wide band semiconductor. Highlights: • We synthetized carbon nitride using melamine cyanurate. • The reaction of carbon nitride formation is catalyzed by sulfuric acid. • The carbon nitride obtained at 700 °C is composed of globular particles. • The material obtained at 700 °C is a n-type semiconductor.« less

Deuterium desorption from ion-irradiated tantalum and effects on surface morphology

NASA Astrophysics Data System (ADS)

Novakowski, T. J.; Sundaram, A.; Tripathi, J. K.; Gonderman, S.; Hassanein, A.

2018-06-01

Compared to tungsten (W), tantalum (Ta) has shown superior resistance to helium (He)-induced surface morphology changes under fusion-relevant irradiation conditions. However, Ta is also expected to have a stronger interaction with hydrogen isotopes, potentially limiting its use as a plasma-facing material. Despite these concerns, detailed investigations on hydrogen irradiation effects on Ta are scarce. In this study, pristine and fuzzy (He+ ion-irradiated) Ta samples are irradiated with 120 eV deuterium (D) ions at various temperatures and examined with a combination of thermal desorption spectroscopy (TDS), scanning electron microscopy (SEM), and optical reflectivity. TDS reveals discrete D desorption temperatures at 660 and 760 K, corresponding to trapping energies of 1.82 and 2.11 eV, respectively. Although D is retained in Ta both in higher quantities and at higher temperatures compared to W, extreme surface temperatures expected in tokamak divertors may exceed these desorption temperatures and counteract retention. Furthermore, this study indicates that Ta is relatively resistant to adverse surface structuring under D+ ion irradiation. In fact, D+ is shown to prevent and suppress Ta fuzz formation in sequential D+/He+ ion irradiation experiments. While further investigations are needed to elucidate this behavior, these initial investigations show a strong potential for the use of Ta as a PFC material.

Electromagnetic diagnostics of ECR-Ion Sources plasmas: optical/X-ray imaging and spectroscopy

NASA Astrophysics Data System (ADS)

Mascali, D.; Castro, G.; Altana, C.; Caliri, C.; Mazzaglia, M.; Romano, F. P.; Leone, F.; Musumarra, A.; Naselli, E.; Reitano, R.; Torrisi, G.; Celona, L.; Cosentino, L. G.; Giarrusso, M.; Gammino, S.

2017-12-01

Magnetoplasmas in ECR-Ion Sources are excited from gaseous elements or vapours by microwaves in the range 2.45-28 GHz via Electron Cyclotron Resonance. A B-minimum, magnetohydrodynamic stable configuration is used for trapping the plasma. The values of plasma density, temperature and confinement times are typically ne= 1011-1013 cm-3, 01 eV

Magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi6-x/3Fe2Ti3-2x(WCo)xO18 (0 ≤ x ≤ 0.15)

NASA Astrophysics Data System (ADS)

Zuo, X. Z.; Yang, J.; Yuan, B.; Song, D. P.; Tang, X. W.; Zhang, K. J.; Zhu, X. B.; Song, W. H.; Dai, J. M.; Sun, Y. P.

2015-03-01

We investigate the structural, magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi6-x/3Fe2Ti3-2x(WCo)xO18 (0 ≤ x ≤ 0.15). The room-temperature weak ferromagnetism is observed for the W/Co co-doped samples. The results of the dielectric constant ɛr, complex impedance Z ″ , the dc conductivity σdc, and hopping frequency fH manifest that the dielectric relaxation of the x = 0 sample and the doped samples in the dielectric anomaly region (450-750 K) can be ascribed to the trap-controlled ac conduction around the doubly ionized oxygen vacancies and the localized hopping process of oxygen vacancies, respectively. The scaling behaviors reveal that the dynamic process of both electrons in the x = 0 sample and oxygen vacancies in the doped samples is temperature independent. The ferroelectric Curie-temperature Tc decreases slightly from 973 K to 947 K with increasing the doping level of W/Co. In addition, the dielectric loss exhibits a dielectric relaxation above 800 K with the rather large activation energies (1.95 eV ≤ Ea ≤ 2.72 eV).

Electron-impact dissociation of molecular hydrogen into neutral fragments

NASA Astrophysics Data System (ADS)

Scarlett, Liam H.; Tapley, Jonathan K.; Fursa, Dmitry V.; Zammit, Mark C.; Savage, Jeremy S.; Bray, Igor

2018-02-01

We present convergent close-coupling calculations of electron-impact dissociation of the ground state of molecular hydrogen into neutral fragments over the range of impact energies from 6 to 300 eV. The calculations account for dissociative excitation, excitation radiative decay dissociation, and predissociation through all bound electronic triplet states, and singlet states up to the D' 1 Π u state. An estimate is given for the contribution from the remaining bound electronic singlet states. Our results are in agreement with the recommended data of Yoon et al. [J. Phys. Chem. Ref. Data 37, 913 (2008)] in the low (6-12 eV) and high (60-70 eV) energy regions, but somewhat lower at the intermediate energies.

SnO2-based memristors and the potential synergies of integrating memristors with MEMS

NASA Astrophysics Data System (ADS)

Zubia, David; Almeida, Sergio; Talukdar, Arka; Mireles, Jose; MacDonald, Eric

2012-06-01

Memristors, usually in the form metal/metal-oxide/metal, have attracted much attention due to their potential application for non-volatile memory. Their simple structure and ease of fabrication make them good candidates for dense memory with projections of 22 terabytes per wafer. Excellent switching times of ~10 ns, memory endurance of >109 cycles, and extrapolated retention times of >10 yrs have been reported. Interestingly, memristors use the migration of ions to change their resistance in response to charge flow, and can therefore measure and remember the amount of current that has flowed. This is similar to many MEMS devices in which the motion of mass is an operating principle of the device. Memristors are also similar to MEMS in the sense that they can both be resistant to radiation effects. Memristors are radiation tolerant since information is stored as a structural change and not as electronic charge. Functionally, a MEMS device's sensitivity to radiation is concomitant to the role that the dielectric layers play in the function of the device. This is due to radiation-induced trapped charge in the dielectrics which can alter device performance and in extreme cases cause failure. Although different material systems have been investigated for memristors, SnO2 has received little attention even though it demonstrates excellent electronic properties and a high resistance to displacement damage from radiation due to a large Frenkel defect energy (7 eV) compared its bandgap (3.6 eV). This talk discusses recent research on SnO2-based memristors and the potential synergies of integrating memristors with MEMS.

Theoretical and experimental study on electron interactions with chlorobenzene: Shape resonances and differential cross sections

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbosa, Alessandra Souza; Laboratório de Colisões Atómicas e Moleculares, CEFITEC, Departamento de Física, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica; Varella, Márcio T. do N.

2016-08-28

In this work, we report theoretical and experimental cross sections for elastic scattering of electrons by chlorobenzene (ClB). The theoretical integral and differential cross sections (DCSs) were obtained with the Schwinger multichannel method implemented with pseudopotentials (SMCPP) and the independent atom method with screening corrected additivity rule (IAM-SCAR). The calculations with the SMCPP method were done in the static-exchange (SE) approximation, for energies above 12 eV, and in the static-exchange plus polarization approximation, for energies up to 12 eV. The calculations with the IAM-SCAR method covered energies up to 500 eV. The experimental differential cross sections were obtained in themore » high resolution electron energy loss spectrometer VG-SEELS 400, in Lisbon, for electron energies from 8.0 eV to 50 eV and angular range from 7{sup ∘} to 110{sup ∘}. From the present theoretical integral cross section (ICS) we discuss the low-energy shape-resonances present in chlorobenzene and compare our computed resonance spectra with available electron transmission spectroscopy data present in the literature. Since there is no other work in the literature reporting differential cross sections for this molecule, we compare our theoretical and experimental DCSs with experimental data available for the parent molecule benzene.« less

Cyclotron Resonance of Electrons Trapped in a Microwave Cavity

ERIC Educational Resources Information Center

Elmore, W. C.

1975-01-01

Describes an experiment in which the free-electron cyclotron resonance of electrons trapped in a microwave cavity by a Penning trap is observed. The experiment constitutes an attractive alternative to one of the Gardner-Purcell variety. (Author/GS)

A new quasi-thermal trap model for solar flare hard X-ray bursts - An electrostatic trap model

NASA Technical Reports Server (NTRS)

Spicer, D. S.; Emslie, A. G.

1988-01-01

A new quasi-thermal trap model of solar flare hard X-ray bursts is presented. The new model utilizes the trapping ability of a magnetic mirror and a magnetic field-aligned electrostatic potential produced by differences in anisotropies of the electron and ion distribution function. It is demonstrated that this potential can, together with the magnetic mirror itself, effectively confine electrons in a trap, thereby enhancing their bremsstrahlung yield per electron. This analysis makes even more untenable models involving precipitation of the bremsstrahlung-producing electrons onto a cold target.

Fano Resonance of Eu2+ and Eu3+ in (Eu,Gd)Te MBE Layers