Marcasite revisited: Optical absorption gap at room temperature

NASA Astrophysics Data System (ADS)

Sánchez, C.; Flores, E.; Barawi, M.; Clamagirand, J. M.; Ares, J. R.; Ferrer, I. J.

2016-03-01

Jagadeesh and Seehra published in 1980 that the marcasite band gap energy is 0.34 eV. However, recent calculations and experimental approximations accomplished by several research groups point out that the marcasite band gap energy should be quite similar to that of pyrite (of the order of 0.8-1.0 eV). By using diffuse reflectance spectroscopy (DRS) we have determined that marcasite has no optical absorption gap at photon energies 0.06 ≤ hν ≤ 0.75 eV and that it has two well defined optical transitions at ~ 0.9 eV and ~ 2.2 eV quite similar to those of pyrite. Marcasite optical absorption gap appears to be Eg ≅ 0.83 ± 0.02 eV and it is due to an allowed indirect transition.

Excitons emissions and Raman scattering of ZnO nanoparticles embedded in BaF2 matrices by reactive magnetron sputtering.

PubMed

Zang, C H; Su, J F; Liu, Y C; Tang, C J; Fang, S J; Zhang, D M; Zhang, Y S

2011-11-01

ZnO nanoparticles embedded in BaF2 matrix were fabricated by rf magnetic sputtering technology. The optical properties of high quality ZnO nanoparticles, thermally post treated in a N2 atmosphere, were investigated by temperature-dependence photoluminescence measurement. Free exciton and localized exciton were observed at the low temperature. Free exciton peak was at 3.374 eV and localized exciton peak was at 3.420 eV, dominating the PL spectrum at 77 K. Free exciton transition was observed at 3.310 eV at room temperature, whereas the localized exciton transition was at 3.378 eV. The multiple-phonon Raman scattering spectrum showed that ZnO nanoparticles embedded in BaF2 matrix had a large deformation energy originated from lattice mismatch between ZnO and BaF2 matrix. Analysis of the fitting results from the temperature dependence of FWHM of ZnO exciton illustrated that the large value of gamma(ph) was good qualitative agreement with the large deformation potential.

Investigation of significantly high barrier height in Cu/GaN Schottky diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garg, Manjari, E-mail: meghagarg142@gmail.com; Kumar, Ashutosh; Singh, R.

2016-01-15

Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantlymore » higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu{sub 2}O) layer at the interface between Cu and GaN. With Cu{sub 2}O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu{sub 2}O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.« less

Lithium ion conduction in sol-gel synthesized LiZr2(PO4)3 polymorphs

NASA Astrophysics Data System (ADS)

Kumar, Milind; Yadav, Arun Kumar; Anita, Sen, Somaditya; Kumar, Sunil

2018-04-01

Safety issue associated with the high flammability and volatility of organic electrolytes used in commercial rechargeable lithium ion batteries has led to significant attention to ceramic-based solid electrolytes. In the present study, lithium ion conduction in two polymorphs of LiZr2(PO4)3 synthesized via the sol-gel route has been investigated. Rietveld refinement of room temperature X-ray diffraction data of LiZr2(PO4)3 powders calcined at 900 °C and 1300 °C confirmed these to be the monoclinic phase with P21/n structure and rhombohedral phase with R3¯c structure, respectively. Increase in calcination temperature and resultant phase transformation improved the room temperature conductivity from 2.27×10-6 ohm-1m-1 for the monoclinic phase to 1.41×10-4 ohm-1m-1 for rhombohedral phase. Temperature dependence of conductivity was modeled using Arrhenius law and activation energy of ˜ 0.59 eV (for monoclinic phase) and ˜0.50 eV (for rhombohedral phase) were obtained.

Structural, morphological and optical properties of pulsed laser deposited ZnSe/ZnSeO3 thin films

NASA Astrophysics Data System (ADS)

Hassan, Syed Ali; Bashir, Shazia; Zehra, Khushboo; Salman Ahmed, Qazi

2018-04-01

The effect of varying laser pulses on structural, morphological and optical behavior of Pulsed Laser Deposited (PLD) ZnSe/ZnSeO3 thin films has been investigated. The films were grown by employing Excimer laser (100 mJ, 248 nm, 18 ns, 30 Hz) at various number of laser pulses i.e. 3000, 4000, 5000 and 6000 with elevated substrate temperature of 300 °C. One film was grown at Room Temperature (RT) by employing 3000 number of laser pulses. In order to investigate the structural analysis of deposited films, XRD analysis was performed. It was observed that the room temperature is not favorable for the growth of crystalline film. However, elevated substrate temperature to 300°C, two phases with preferred orientation of ZnSeO3 (2 1 2) and ZnSe (3 3 1) were identified. AFM and SEM analysis were performed to explore the surface morphology of grown films. Morphological analysis also confirmed the non-uniform film growth at room temperature. At elevated substrate temperature (300 °C), the growth of dendritic rods and cubical crystalline structures are observed for lower number of laser pulses i.e. 3000 and 4000 respectively. With increased number of pulses i.e. 5000 and 6000, the films surface morphology becomes smooth which is confirmed by measurement of surface RMS roughness. Number of grains, skewness, kurtosis and other parameters have been evaluated by statistical analysis. In order to investigate the thickness, and optical properties of deposited films, ellipsometery and UV–Vis spectroscopy techniques were employed. The estimated band gap energy is 2.67 eV for the film grown at RT, whereas band gap values varies from 2.80 eV to 3.01 eV for the films grown at 300 °C with increasing number of laser pulses.

Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices

DTIC Science & Technology

2003-01-01

Kramer Fabrication of hcp-Co nanocrystals via rapid pyrolysis in inverse PS - b - P2VP micelles and thermal annealing Nano Letters In Press ...the figure) and different pump photon energies. a) hν=1.684eV, b ) hν= 1.536eV and c) hν= 1.433eV. All spectra are normalized to the maximum value of...correlation functions of two consecutively emitted photons from a single excited semiconductor quantum dot. We have shown that a 6 a) b ) 0.10 [ML/s] 250 nm 3.0

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

NASA Astrophysics Data System (ADS)

He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

2017-02-01

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

Magnetism and electronic structure of CoFeCrX (X = Si, Ge) Heusler alloys

NASA Astrophysics Data System (ADS)

Jin, Y.; Kharel, P.; Lukashev, P.; Valloppilly, S.; Staten, B.; Herran, J.; Tutic, I.; Mitrakumar, M.; Bhusal, B.; O'Connell, A.; Yang, K.; Huh, Y.; Skomski, R.; Sellmyer, D. J.

2016-08-01

The structural, electronic, and magnetic properties of CoFeCrX (X = Si, Ge) Heusler alloys have been investigated. Experimentally, the alloys were synthesized in the cubic L21 structure with small disorder. The cubic phase of CoFeCrSi was found to be highly stable against heat treatment, but CoFeCrGe disintegrated into other new compounds when the temperature reached 402 °C (675 K). Although the first-principle calculation predicted the possibility of tetragonal phase in CoFeCrGe, the tetragonal phase could not be stabilized experimentally. Both CoFeCrSi and CoFeCrGe compounds showed ferrimagnetic spin order at room temperature and have Curie temperatures (TC) significantly above room temperature. The measured TC for CoFeCrSi is 790 K but that of CoFeCrGe could not be measured due to its dissociation into new compounds at 675 K. The saturation magnetizations of CoFeCrSi and CoFeCrGe are 2.82 μB/f.u. and 2.78 μB/f.u., respectively, which are close to the theoretically predicted value of 3 μB/f.u. for their half-metallic phases. The calculated band gaps for CoFeCrSi and CoFeCrGe are, respectively, 1 eV and 0.5 eV. These materials have potential for spintronic device applications, as they exhibit half-metallic electronic structures with large band gaps, and Curie temperatures significantly above room temperature.

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing.

PubMed

Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

2008-12-01

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3×10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 °C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

PubMed Central

Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

2008-01-01

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×1016 cm−2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices. PMID:27878029

Temperature-dependent photoluminescence of CuAlO2 single crystals fabricated by using a flux self-removal method

NASA Astrophysics Data System (ADS)

Nam, Y. S.; Yoon, J. S.; Ju, H. L.; Chang, S. K.; Baek, K. S.

2014-10-01

The temperature-dependent behavior of p-type transparent semiconducting oxide CuAlO2 single crystals prepared by using a flux self-removal method in alumina crucibles was investigated through transmittance and photoluminescence (PL) measurements at temperatures from 12 K to room temperature. The low-temperature (12 K) PL spectrum shows two weak, broad emission peaks, one at 3.52 eV and the other at 3.08 eV, which we assign to excitonic emission and to defectrelated emission originating from copper vacancies. The positions of the PL peaks as functions of temperature exhibit a normal behavior satisfying the standard Varshini law, and the Debye temperature is found to be θ D = 610 ± 80 K. The exciton-binding energy of the CuAlO2 single crystal is estimated to be 49 meV from the PL intensity change with temperature.

Spreading of lithium on a stainless steel surface at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skinner, C. H.; Capece, A. M.; Roszell, J. P.

Lithium conditioned plasma facing surfaces have lowered recycling and enhanced plasma performance on many fusion devices and liquid lithium plasma facing components are under consideration for future machines. A key factor in the performance of liquid lithium components is the wetting by lithium of its container. We have observed the surface spreading of lithium from a mm-scale particle to adjacent stainless steel surfaces using a scanning Auger microprobe that has elemental discrimination. Here, the spreading of lithium occurred at room temperature (when lithium is a solid) from one location at a speed of 0.62 μm/day under ultrahigh vacuum conditions. Separatemore » experiments using temperature programmed desorption (TPD) investigated bonding energetics between monolayer-scale films of lithium and stainless steel. While multilayer lithium desorption from stainless steel begins to occur just above 500 K (E des = 1.54 eV), sub-monolayer Li desorption occurred in a TPD peak at 942 K (E des = 2.52 eV) indicating more energetically favorable lithium-stainless steel bonding (in the absence of an oxidation layer) than lithium lithium bonding.« less

Spreading of lithium on a stainless steel surface at room temperature

DOE PAGES

Skinner, C. H.; Capece, A. M.; Roszell, J. P.; ...

2015-11-10

Lithium conditioned plasma facing surfaces have lowered recycling and enhanced plasma performance on many fusion devices and liquid lithium plasma facing components are under consideration for future machines. A key factor in the performance of liquid lithium components is the wetting by lithium of its container. We have observed the surface spreading of lithium from a mm-scale particle to adjacent stainless steel surfaces using a scanning Auger microprobe that has elemental discrimination. Here, the spreading of lithium occurred at room temperature (when lithium is a solid) from one location at a speed of 0.62 μm/day under ultrahigh vacuum conditions. Separatemore » experiments using temperature programmed desorption (TPD) investigated bonding energetics between monolayer-scale films of lithium and stainless steel. While multilayer lithium desorption from stainless steel begins to occur just above 500 K (E des = 1.54 eV), sub-monolayer Li desorption occurred in a TPD peak at 942 K (E des = 2.52 eV) indicating more energetically favorable lithium-stainless steel bonding (in the absence of an oxidation layer) than lithium lithium bonding.« less

Spreading of lithium on a stainless steel surface at room temperature

NASA Astrophysics Data System (ADS)

Skinner, C. H.; Capece, A. M.; Roszell, J. P.; Koel, B. E.

2016-01-01

Lithium conditioned plasma facing surfaces have lowered recycling and enhanced plasma performance on many fusion devices and liquid lithium plasma facing components are under consideration for future machines. A key factor in the performance of liquid lithium components is the wetting by lithium of its container. We have observed the surface spreading of lithium from a mm-scale particle to adjacent stainless steel surfaces using a scanning Auger microprobe that has elemental discrimination. The spreading of lithium occurred at room temperature (when lithium is a solid) from one location at a speed of 0.62 μm/day under ultrahigh vacuum conditions. Separate experiments using temperature programmed desorption (TPD) investigated bonding energetics between monolayer-scale films of lithium and stainless steel. While multilayer lithium desorption from stainless steel begins to occur just above 500 K (Edes = 1.54 eV), sub-monolayer Li desorption occurred in a TPD peak at 942 K (Edes = 2.52 eV) indicating more energetically favorable lithium-stainless steel bonding (in the absence of an oxidation layer) than lithium-lithium bonding.

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

NASA Technical Reports Server (NTRS)

Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

1973-01-01

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Band gap and electronic structure of MgSiN2

NASA Astrophysics Data System (ADS)

Quirk, J. B.; Râsander, M.; McGilvery, C. M.; Palgrave, R.; Moram, M. A.

2014-09-01

Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN2 is similar to that of wurtzite AlN. A band gap of 5.7 eV was calculated for both MgSiN2 (indirect) and AlN (direct) using the Heyd-Scuseria-Ernzerhof approximation. Correction with respect to the experimental room-temperature band gap of AlN indicates that the true band gap of MgSiN2 is 6.2 eV. MgSiN2 has an additional direct gap of 6.3 eV at the Γ point.

Room temperature current injection polariton light emitting diode with a hybrid microcavity.

PubMed

Lu, Tien-Chang; Chen, Jun-Rong; Lin, Shiang-Chi; Huang, Si-Wei; Wang, Shing-Chung; Yamamoto, Yoshihisa

2011-07-13

The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electrodynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.

Some physical properties of Nb2O5 thin films prepared using nobic acid based colloidal suspension at room temperature

NASA Astrophysics Data System (ADS)

Salim, Evan T.; Admon Saimon, Jehan; Abood, Marwa K.; Fakhri, Makram A.

2017-10-01

This work presents the successful preparation of niobium pentoxide micro structures thin films at room temperature. A chemical colloidal suspension was deposited employing Spin coating method. Nb2O5 thin films were prepared at two different thicknesses before and after ultrasonic vibration processes. Optical, structural, and morphological properties were studied. An enhanced crystalline structure with bigger grain size at both thicknesses was obtained after ultrasonic process; this was ensured by SEM results. The energy gap of the prepared films was estimated and found to be about (2.81, 2.42) eV for (T1  =  325 nm) and (2.59, 2.32) eV at the second thickness (T2  =  425 nm). The I-V characteristic study of prepared heterojunction on silicon substrate show an increase in the rectification ratio after the ultrasonic vibrational process for both thicknesses.

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

NASA Astrophysics Data System (ADS)

Youroukov, S.; Kitova, S.; Danev, G.

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

Nanostructured ZnO Films for Room Temperature Ammonia Sensing

NASA Astrophysics Data System (ADS)

Dhivya Ponnusamy; Sridharan Madanagurusamy

2014-09-01

Zinc oxide (ZnO) thin films have been deposited by a reactive dc magnetron sputtering technique onto a thoroughly cleaned glass substrate at room temperature. X-ray diffraction revealed that the deposited film was polycrystalline in nature. The field emission scanning electron micrograph (FE-SEM) showed the uniform formation of a rugby ball-shaped ZnO nanostructure. Energy dispersive x-ray analysis (EDX) confirmed that the film was stoichiometric and the direct band gap of the film, determined using UV-Vis spectroscopy, was 3.29 eV. The ZnO nanostructured film exhibited better sensing towards ammonia (NH3) at room temperature (˜30°C). The fabricated ZnO film based sensor was capable of detecting NH3 at as low as 5 ppm, and its parameters, such as response, selectivity, stability, and response/recovery time, were also investigated.

The optical properties of CdS crystal grown by the sublimation method

NASA Astrophysics Data System (ADS)

Hong, K. J.; Jeong, T. S.; Yoon, C. J.; Shin, Y. J.

2000-09-01

A cadmium sulfide (CdS) single crystal was grown by the sublimation method without a seed crystal in a two-stage vertical electric furnace. The carrier concentration and mobility obtained from Hall measurements at room temperature were 2.90 ×10 16 cm-3 and 316 cm 2/V s, respectively. The photoluminescence and the photocurrent measurement of the CdS single crystal have been performed in the temperature ranging from 20 to 293 K. From the photoluminescence measurement, the energy of the free exciton Ex(A) and Ex(B) has been obtained to be 2.5511 and 2.5707 eV, respectively. The variance of the peak position, intensity, and linewidth of the free excitons as a function of the temperature have been investigated by means of the conventional empirical relations and Toyozawa's theory. The crystal field of the CdS and its splitting energy, Δ cr, have been found to be 19.6 meV. In the photocurrent measurement, only the Ex(A) exciton peak has been observed. The energy band gap of the CdS at room temperature was determined to be 2.4749 eV by the photoluminescence and photocurrent measurement. Also, the temperature dependence of the energy band gap of the CdS, Eg( T), has been examined.

Photoemission study of CaF2- and SrF2-GaAs(110) interfaces formed at room temperature

NASA Astrophysics Data System (ADS)

Mao, D.; Young, K.; Kahn, A.; Zanoni, R.; McKinley, J.; Margaritondo, G.

1989-06-01

Interfaces formed by evaporating CaF2 or SrF2 on room-temperature GaAs(110) are studied with synchrotron-radiation photoemission spectroscopy. The fluoride films grow uniformly on the GaAs surface. The deposition of CaF2 and SrF2 induces a large initial band bending on p-type GaAs (~0.9 eV) and a small initial band bending on n-type GaAs (~0.25 eV). The valence band is dominated by the F 2p peak which shifts toward high binding energies by ~1.5 eV after the deposition of >=16 Å fluoride. This shift reflects an increase in the valence-band offset between the two materials as the film forms. The final band offsets are estimated at 7.7 and 8.0 eV for CaF2 and SrF2, respectively, and are in qualitative agreement with those expected from the fluoride-Si data. Core-level measurements indicate that no reaction or decomposition of the MF2 molecule takes place at the interface. The F 2s core-level line shape and the increase in the binding-energy separation of F 2s and Ca 3p with increasing coverage suggest the presence of an interface F component. Contrary to the CaF2/Si case, no measurable Ca-substrate bonding effect is observed. The dissociative effect of uv irradiation on the CaF2 film is also investigated.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Optical Absorption and Electric Resistivity of an l-Cysteine Film

NASA Astrophysics Data System (ADS)

Kamada, Masao; Hideshima, Takuya; Azuma, Junpei; Yamamoto, Isamu; Imamura, Masaki; Takahashi, Kazutoshi

2016-12-01

The optical and electric properties of an l-cysteine film have been investigated to understand its applicability to bioelectronics. The fundamental absorption is the allowed transition having the threshold at 5.8 eV and the absorption is due to the charge-transfer type transition from sulfur-3sp to oxygen-2p and/or carbon-2p states, while absorptions more than 9 eV can be explained with intra-atomic transitions in the functional groups. The electric resistivity is 2.0 × 104 Ω m at room temperature and increases as the sample temperature decreases. The results indicate that the l-cysteine film is a p-type semiconductor showing the hole conduction caused by the sulfur-3sp occupied states and unknown impurity or defect states as acceptors. The electron affinity of the l-cysteine film is derived as ≦-0.3 eV.

Ab-initio calculations of electronic, transport, and structural properties of boron phosphide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ejembi, J. I.; Nwigboji, I. H.; Franklin, L.

2014-09-14

We present results from ab-initio, self-consistent density functional theory calculations of electronic and related properties of zinc blende boron phosphide (zb-BP). We employed a local density approximation potential and implemented the linear combination of atomic orbitals formalism. This technique follows the Bagayoko, Zhao, and Williams method, as enhanced by the work of Ekuma and Franklin. The results include electronic energy bands, densities of states, and effective masses. The calculated band gap of 2.02 eV, for the room temperature lattice constant of a=4.5383 Å, is in excellent agreement with the experimental value of 2.02±0.05 eV. Our result for the bulk modulus,more » 155.7 GPa, agrees with experiment (152–155 GPa). Our predictions for the equilibrium lattice constant and the corresponding band gap, for very low temperatures, are 4.5269 Å and 2.01 eV, respectively.« less

Silicon Detector System for High Rate EXAFS Applications.

PubMed

Pullia, A; Kraner, H W; Siddons, D P; Furenlid, L R; Bertuccio, G

1995-08-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Silicon Detector System for High Rate EXAFS Applications

PubMed Central

Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, L. R.; Bertuccio, G.

2015-01-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at −35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at −35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications. PMID:26538683

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCall, Kyle M.; Stoumpos, Constantinos C.; Kostina, Svetlana S.

The optical and electronic properties of Bridgman grown single crystals of the wide-bandgap semiconducting defect halide perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) have been investigated. Intense Raman scattering was observed at room temperature for each compound, indicating high polarizability and strong electron–phonon coupling. Both low-temperature and room-temperature photoluminescence (PL) were measured for each compound. Cs3Sb2I9 and Rb3Sb2I9 have broad PL emission bands between 1.75 and 2.05 eV with peaks at 1.96 and 1.92 eV, respectively. The Cs3Bi2I9 PL spectra showed broad emission consisting of several overlapping bands in the 1.65–2.2 eV range. Evidence of strong electron–phononmore » coupling comparable to that of the alkali halides was observed in phonon broadening of the PL emission. Effective phonon energies obtained from temperature-dependent PL measurements were in agreement with the Raman peak energies. A model is proposed whereby electron–phonon interactions in Cs3Sb2I9, Rb3Sb2I9, and Cs3Bi2I9 induce small polarons, resulting in trapping of excitons by the lattice. The recombination of these self-trapped excitons is responsible for the broad PL emission. Rb3Bi2I9, Rb3Sb2I9, and Cs3Bi2I9 exhibit high resistivity and photoconductivity response under laser photoexcitation, indicating that these compounds possess potential as semiconductor hard radiation detector materials.« less

Photoluminescence of Zn-implanted GaN

NASA Technical Reports Server (NTRS)

Pankove, J. I.; Hutchby, J. A.

1974-01-01

The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

Room temperature chemical synthesis of lead selenide thin films with preferred orientation

NASA Astrophysics Data System (ADS)

Kale, R. B.; Sartale, S. D.; Ganesan, V.; Lokhande, C. D.; Lin, Yi-Feng; Lu, Shih-Yuan

2006-11-01

Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH3COO)2 as Pb2+ and Na2SeSO3 as Se2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

Rapid restoration of electric vehicle battery performance while driving at cold temperatures

NASA Astrophysics Data System (ADS)

Zhang, Guangsheng; Ge, Shanhai; Yang, Xiao-Guang; Leng, Yongjun; Marple, Dan; Wang, Chao-Yang

2017-12-01

Electric vehicles (EVs) driven in cold weather experience two major drawbacks of Li-ion batteries: drastic power loss (up to 10-fold at -30 °C) and restriction of regenerative braking at temperatures below 5-10 °C. Both factors greatly reduce cruise range, exacerbating drivers' range anxiety in winter. While preheating the battery before driving is a practice widely adopted to maintain battery power and EV drivability, it is time-consuming (on the order of 40 min) and prohibits instantaneous mobility. Here we reveal a control strategy that can rapidly restore EV battery power and permit full regeneration while driving at temperatures as low as -40 °C. The strategy involves heating the battery internally during regenerative braking and rest periods of driving. We show that this technique fully restores room-temperature battery power and regeneration in 13, 33, 46, 56 and 112 s into uninterrupted driving in 0, -10, -20, -30 and -40 °C environments, respectively. Correspondingly, the strategy significantly increases cruise range of a vehicle operated at cold temperatures, e.g. 49% at -40 °C in simulated US06 driving cycle tests. The present work suggests that smart batteries with embedded sensing/actuation can leapfrog in performance.

Photoluminescence enhancement from GaN by beryllium doping

NASA Astrophysics Data System (ADS)

García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

2016-10-01

High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

Temperature dependence of the optical absorption spectra of InP/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Savchenko, S. S.; Vokhmintsev, A. S.; Weinstein, I. A.

2017-03-01

The optical-absorption spectra of InP/ZnS (core/shell) quantum dots have been studied in a broad temperature range of T = 6.5-296 K. Using the second-order derivative spectrophotometry technique, the energies of optical transitions at room temperature were found to be E 1 = 2.60 ± 0.02 eV (for the first peak of excitonic absorption in the InP core) and E 2 = 4.70 ± 0.02 eV (for processes in the ZnS shell). The experimental curve of E 1( T) has been approximated for the first time in the framework of a linear model and in terms of the Fan's formula. It is established that the temperature dependence of E 1 is determined by the interaction of excitons and longitudinal acoustic phonons with hω = 15 meV.

Distributions of Thermal-Annealing Activation Energies for Light-Induced Spins in Fast and Slow Processes in a-Si1-xNx:H Alloys

NASA Astrophysics Data System (ADS)

Zhang, Jinyan; Kumeda, Minoru; Shimizu, Tatsuo

1995-10-01

We report on the thermal annealing of light-induced neutral dangling bonds (DB's) created by strong band-gap illumination at 77 K and room temperature (RT) in amorphous silicon-nitrogen alloys ( a-Si1- xN x:H). We find that the light-induced DB's are annealed out with distinct distributions of annealing activation energies (E A's). The distribution for the light-induced DB's created in the fast process (FDB's) and the one for those created in the slow process (SDB's) are separated unambiguously: E A for FDB's is in the range from 0 to 0.7 eV, in which two separated peaks (centered at about 0.09 and 0.4 eV) are embodied, and E A for SDB's is in the range from 0.6 to 1.4 eV, centered at about 1 eV, in a-Si0.5N0.5:H. Moreover, the results demonstrate that the distributions of E A for FDB's and SDB's depend on illumination temperature and illumination time.

Fabrication and photoluminescence properties of graphite fiber/ZnO nanorod core-shell structures.

PubMed

Liu, Xianbin; Du, Hejun; Liu, Bo; Wang, Jianxiong; Sun, Xiao Wei; Sun, Handong

2011-08-01

Graphite fiber/ZnO nanorod core-shell structures were synthesized by thermal evaporation process. The core-shell hybrid architectures were comprised of ZnO nanorods grown on the surface of graphite fiber. In addition, Hollow ZnO hierarchical structure can be obtained by oxidizing the graphite fiber. Room temperature photoluminescence (PL) of the as-made graphite fiber/ZnO nanorod structures shows two UV peaks at around 3.274 eV and 3.181 eV. The temperature-dependent photoluminescence spectra demonstrate the two UV emissions are attributed to the intrinsic optical transitions and extrinsic defect-related emissions in ZnO. These hybrid structures may be used as the building block for fabrication of nanodevices.

Stacking fault related luminescence in GaN nanorods.

PubMed

Forsberg, M; Serban, A; Poenaru, I; Hsiao, C-L; Junaid, M; Birch, J; Pozina, G

2015-09-04

Optical and structural properties are presented for GaN nanorods (NRs) grown in the [0001] direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy. Transmission electron microscopy (TEM) reveals clusters of dense stacking faults (SFs) regularly distributed along the c-axis. A strong emission line at ∼3.42 eV associated with the basal-plane SFs has been observed in luminescence spectra. The optical signature of SFs is stable up to room temperatures with the activation energy of ∼20 meV. Temperature-dependent time-resolved photoluminescence properties suggest that the recombination mechanism of the 3.42 eV emission can be understood in terms of multiple quantum wells self-organized along the growth axis of NRs.

Performance of room temperature mercuric iodide /HgI2/ detectors in the ultralow-energy X-ray region

NASA Technical Reports Server (NTRS)

Dabrowski, A. J.; Barton, J. B.; Huth, G. C.; Whited, R.; Ortale, C.; Economou, T. E.; Turkevich, A. L.; Iwanczyk, J. S.

1981-01-01

Experiments have been done to study the performance of mercuric iodide (HgI2) detectors in the ultralow-energy X-ray region. Energy resolution values of 245 eV (FWHM) for the Mg K-alpha X-ray line at 1.25 keV and 225 eV (FWHM) for the electronic noise linewidth have been obtained for an HgI2 detector with painted carbon contacts using a pulsed-light feedback preamplifier; the whole system was operated at room temperature. The resolution values in the ultralow-energy region are still limited by electronic noise of the system. In an attempt to minimize X-ray attenuation in the front contact, detectors were prepared with thin evaporated Pd contacts. These detectors show a pronounced low-energy tailing of the photopeak below a few keV, in contrast to the spectra obtained by detectors with carbon contact. An attempt has been made to explain the tailing effect starting with models wich have been proposed to describe similar effects in Ge detectors.

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

NASA Astrophysics Data System (ADS)

Erdoğan, Erman; Kundakçı, Mutlu

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Growth kinetics of indium metal atoms on Si(1 1 2) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raj, Vidur; Chauhan, Amit Kumar Singh; Gupta, Govind, E-mail: govind@nplindia.org

Graphical abstract: Controlled growth of indium atoms on Si(1 1 2) surface has been carried out systematically and the influence of substrate temperature on the kinetics is analysed under various growth conditions. Temperature induced anomalous layer-to-clusters transformation during thermal desorption has also been reported. - Highlights: • Controlled growth of indium atoms on Si(1 1 2) surface & their thermal stability. • Influence of substrate temperature on the kinetics under various growth conditions. • Temperature induced layer-to-clusters transformation during thermal desorption. - Abstract: The growth kinetics and desorption behavior of indium (In) atoms grown on high index Si(1 1 2)more » surface at different substrate temperatures has been studied. Auger electron spectroscopy analysis revealed that In growth at room temperature (RT) and high substrate temperature (HT) ∼250 °C follows Frank–van der Merve growth mode whereas at temperatures ≥450 °C, In growth evolves through Volmer–Weber growth mode. Thermal desorption studies of RT and 250 °C grown In/Si(1 1 2) systems show temperature induced rearrangement of In atoms over Si(1 1 2) surface leading to clusters to layer transformation. The monolayer and bilayer desorption energies for RT grown In/Si(1 1 2) system are calculated to be 2.5 eV and 1.52 eV, while for HT-250 °C the values are found to be 1.6 eV and 1.3 eV, respectively. This study demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway of In on Si(1 1 2) surface.« less

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

NASA Astrophysics Data System (ADS)

Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.

2018-01-01

Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond detectors irradiated with 14 MeV neutrons at room temperature.

Long-term room temperature stability of TlBr gamma detectors

NASA Astrophysics Data System (ADS)

Conway, A. M.; Voss, L. F.; Nelson, A. J.; Beck, P. R.; Graff, R. T.; Nikolic, R. J.; Payne, S. A.; Kim, H.; Cirignano, L. J.; Shah, K.

2011-09-01

TlBr is a material of interest for use in room temperature gamma ray detector applications due to is wide bandgap 2.7 eV and high average atomic number (Tl 81, Br 35). Researchers have achieved energy resolutions of 1.3 % at 662 keV, demonstrating the potential of this material system. However, these detectors are known to polarize using conventional configurations, limiting their use. Continued improvement of room temperature, high-resolution gamma ray detectors based on TlBr requires further understanding of the degradation mechanisms. While high quality material is a critical starting point for excellent detector performance, we show that the room temperature stability of planar TlBr gamma spectrometers can be significantly enhanced by treatment with both hydrofluoric and hydrochloric acid. By incorporating F or Cl into the surface of TlBr, current instabilities are eliminated and the longer term current of the detectors remains unchanged. 241Am spectra are also shown to be more stable for extended periods; detectors have been held at 2000 V/cm for 52 days with less than 10% degradation in peak centroid position. In addition, evidence for the long term degradation mechanism being related to the contact metal is presented.

Structural and magnetic properties of Ni nanofilms on Ge(001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bocirnea, Amelia Elena; Costescu, Ruxandra Maria; Pasuk, Iuliana; Lungu, George Adrian; Teodorescu, Cristian Mihail

2017-12-01

Ni films of 20 nm nominal thickness were grown on Ge(001) substrates by molecular beam epitaxy at several different temperatures from room temperature up to 400 °C. X-ray diffraction and X-ray photoelectron spectroscopy reveal the nucleation of Ni-Ge compounds (NiGe, Ni2Ge, Ni5Ge2) as well as a departure from the fcc Ni structure exhibited by the films at and beyond a temperature of 100 °C. The binding energy of the Ni 2p peak increases from the RT value (852.7 eV) by 0.5-1.1 eV for the Ni/Ge(001) samples, while the Ge 2p binding energy changes by 0.6-0.7 eV after Ni growth compared to a clean Ge(001) substrate (there is only a ±0.15 eV shift among the samples grown on substrates at higher temperatures). By increasing substrate temperature, we obtained higher intermixing of Ni and Ge, but rather than both Ni and Ge interdiffusing, we find that Ni diffuses further into the germanium with higher substrate temperature, forming increasingly Ni-rich Ni-Ge compounds diluted into the Ge matrix. Based on Magneto-optic Kerr Effect measurements, Ni/Ge(001) grown on substrates at 100 and 200 °C does not exhibit a hysteresis loop, while the samples on 300 and 400 °C substrates show magnetic behavior, which we attribute to the magnetic character of hexagonal Ni5Ge2 (which is determined here for the first time to be a ferromagnetic phase).

Electrical transport in AZO nanorods

NASA Astrophysics Data System (ADS)

Yildiz, A.; Cansizoglu, H.; Karabacak, T.

2015-10-01

Al-doped ZnO (AZO) nanorods (NRs) with different lengths were deposited by utilizing glancing angle deposition (GLAD) technique in a DC sputter system at room temperature. The structural and optical characteristics of the NRs were investigated by the X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis-NIR spectroscopy measurements. A band gap of about 3.5 eV was observed for the NRs. A novel capping process utilizing varying deposition angles was used to introduce a blanket metal top contact for the electrical characterization of NRs. Current-voltage (I-V) measurements were used to properly evaluate the approximate resistivity of a single NR. The electrical conduction was found to be governed by the thermally activated transport mechanism. Activation energy was determined as 0.14 eV from temperature dependent resistivity data.

Stable Au–C bonds to the substrate for fullerene-based nanostructures

PubMed Central

Chutora, Taras; Redondo, Jesús; de la Torre, Bruno; Švec, Martin

2017-01-01

We report on the formation of fullerene-derived nanostructures on Au(111) at room temperature and under UHV conditions. After low-energy ion sputtering of fullerene films deposited on Au(111), bright spots appear at the herringbone corner sites when measured using a scanning tunneling microscope. These features are stable at room temperature against diffusion on the surface. We carry out DFT calculations of fullerene molecules having one missing carbon atom to simulate the vacancies in the molecules resulting from the sputtering process. These modified fullerenes have an adsorption energy on the Au(111) surface that is 1.6 eV higher than that of C60 molecules. This increased binding energy arises from the saturation by the Au surface of the bonds around the molecular vacancy defect. We therefore interpret the observed features as adsorbed fullerene-derived molecules with C vacancies. This provides a pathway for the formation of fullerene-based nanostructures on Au at room temperature. PMID:28685108

Multifunctionality of nanocrystalline lanthanum ferrite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rai, Atma, E-mail: atma@iitp.ac.in; Thakur, Awalendra K.; Centre for Energy and Environment, Indian Institute of Technology Patna 800013 India

2016-05-06

Nanocrystalline lanthanum ferrite has been synthesized by adopting modified Pechini route. No evidence of impurity or secondary phase has been detected up to the detection of error limit of X-ray diffractometer (XRD). Rietveld refinement of X-ray diffraction pattern reveals orthorhombic crystal system with space group Pnma (62).Crystallite size and lattice strain was found to be ∼42.8nm and 0.306% respectively. Optical band gap was found to be 2.109 eV, by UV-Visible diffused reflectance spectrum (DRS). Brunauer-Emmet-Teller (BET) surface area was found to be ∼3.45 m{sup 2}/g. Magnetization-hysteresis (M-H) loop was recorded at room temperature (300K) reveals weak ferromagnetism in Nanocrystalline lanthanummore » ferrite. The weak ferromagnetism in lanthanum ferrite is due to the uncompensated antiferromagnetic spin ordering. Ferroelectric loop hysteresis observed at room temperature at 100Hz depicts the presence of ferroelectric ordering in LaFeO{sub 3}.Simultanious presence of magnetic and ferroelectric ordering at room temperature makes it suitable candidate of Multiferroic family.« less

Multifunctionality of nanocrystalline lanthanum ferrite

NASA Astrophysics Data System (ADS)

Rai, Atma; Thakur, Awalendra K.

2016-05-01

Nanocrystalline lanthanum ferrite has been synthesized by adopting modified Pechini route. No evidence of impurity or secondary phase has been detected up to the detection of error limit of X-ray diffractometer (XRD). Rietveld refinement of X-ray diffraction pattern reveals orthorhombic crystal system with space group Pnma (62).Crystallite size and lattice strain was found to be ˜42.8nm and 0.306% respectively. Optical band gap was found to be 2.109 eV, by UV-Visible diffused reflectance spectrum (DRS). Brunauer-Emmet-Teller (BET) surface area was found to be ˜3.45 m2/g. Magnetization-hysteresis (M-H) loop was recorded at room temperature (300K) reveals weak ferromagnetism in Nanocrystalline lanthanum ferrite. The weak ferromagnetism in lanthanum ferrite is due to the uncompensated antiferromagnetic spin ordering. Ferroelectric loop hysteresis observed at room temperature at 100Hz depicts the presence of ferroelectric ordering in LaFeO3.Simultanious presence of magnetic and ferroelectric ordering at room temperature makes it suitable candidate of Multiferroic family.

Optical spectroscopy and band gap analysis of hybrid improper ferroelectric Ca3Ti2O7

NASA Astrophysics Data System (ADS)

Musfeldt, Janice; Cherian, Judy; Birol, Turan; Harms, Nathan; Gao, Bin; Cheong, Sang; Vanderbilt, David

We bring together optical absorption spectroscopy, photoconductivity, and first principles calculations to reveal the electronic structure of the room temperature ferroelectric Ca3Ti2O7. The 3.94 eV direct gap in Ca3Ti2O7 is charge transfer in nature and noticeably higher than that in CaTiO3 (3.4 eV), a finding that we attribute to dimensional confinement in the n = 2 member of the Ruddlesden-Popper series. While Sr substitution introduces disorder and broadens the gap edge slightly, oxygen deficiency reduces the gap to 3.7 eV and gives rise to a broad tail that persists to much lower energies. MSD, BES, U. S. DoE and DMREF, NSF.

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process.

PubMed

Vishwas, M; Narasimha Rao, K; Arjuna Gowda, K V; Chakradhar, R P S

2010-09-15

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. Copyright 2010 Elsevier B.V. All rights reserved.

Optical properties of InN thin films

NASA Astrophysics Data System (ADS)

Malakhov, Vladislav Y.

2000-04-01

The basic optical properties of low temperature plasma enhanced chemical reactionary sputtered (PECRS) InN thin films are presented. Optical absorption and reflectance spectra of InN polycrystalline films at room temperature in visible and near infrared (NIR) regions were taken to determine direct band gap energy (2.03 eV), electron plasma resonances energy (0.6 eV), damping constant (0.18 eV), and optical effective mass of electrons (0.11). In addition the UV and visible reflectance spectra have been used to reproduce accurately dielectric function of wurtzite InN for assignments of the peak structures to interband transitions (1.5 - 12.0 eV) as well as to determine dielectric constant (9.3) and refractive index (>3.0). The revealed reflectance peaks at 485 and 590 cm-1 respectively in IR spectra are connected with TO and LO optical vibration modes of InN films. Some TO (485 cm-1) and LO (585 cm-1) phonon features of indium nitride polycrystalline films on ceramics were observed in Raman spectra and also discussed. The excellent possibilities of InN polycrystalline layers for potential application in optoelectronic devices such as LEDs based InGaAlN and high efficiency solar cells are confirmed.

Doping reaction of PH3 and B2H6 with Si(100)

NASA Astrophysics Data System (ADS)

Yu, Ming L.; Vitkavage, D. J.; Meyerson, B. S.

1986-06-01

The reaction of phosphine PH3 and diborane B2H6 on Si(100) surfaces was studied by surface analytical techniques in relation to the in situ doping process in the chemical vapor deposition of silicon. Phosphine chemisorbs readily either nondissociatively at room temperature or dissociatively with the formation of silicon-hydrogen bonds at higher temperatures. Hydrogen can be desorbed at temperatures above 400 °C to generate a phosphorus layer. Phosphorus is not effective in shifting the Fermi level until the coverage reaches 2×1014/cm2. A maximum shift of 0.45 eV toward the conduction band was observed. In contrast, diborane has a very small sticking coefficient and the way to deposit boron is to decompose diborane directly on the silicon surface at temperatures above 600 °C. Boron at coverages less than 2×1014/cm2 is very effective in shifting the Fermi level toward the valence band and a maximum change of 0.4 eV was observed.

Stoichiometric and Oxygen-Deficient VO2 as Versatile Hole Injection Electrode for Organic Semiconductors.

PubMed

Fu, Keke; Wang, Rongbin; Katase, Takayoshi; Ohta, Hiromichi; Koch, Norbert; Duhm, Steffen

2018-03-28

Using photoemission spectroscopy, we show that the surface electronic structure of VO 2 is determined by the temperature-dependent metal-insulator phase transition and the density of oxygen vacancies, which depends on the temperature and ultrahigh vacuum (UHV) conditions. The atomically clean and stoichiometric VO 2 surface is insulating at room temperature and features an ultrahigh work function of up to 6.7 eV. Heating in UHV just above the phase transition temperature induces the expected metallic phase, which goes in hand with the formation of oxygen defects (up to 6% in this study), but a high work function >6 eV is maintained. To demonstrate the suitability of VO 2 as hole injection contact for organic semiconductors, we investigated the energy-level alignment with the prototypical organic hole transport material N, N'-di(1-naphthyl)- N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB). Evidence for strong Fermi-level pinning and the associated energy-level bending in NPB is found, rendering an Ohmic contact for holes.

Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

NASA Astrophysics Data System (ADS)

Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

2016-03-01

Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <1014 cm-3. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p+ side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V.

Phototransistor (PT) in the 2 Micron Region

NASA Technical Reports Server (NTRS)

Prather, Dennis; Sulima, Oleg V.

2006-01-01

Within the framework of the project the University of Delaware has developed InGaAsSb-based heterojunction phototransistors (HPT) structure with a large (1000 micron diameter) photosensitive/photoactive area. Two different compositions of quaternary alloys were used to provide the cutoff wavelength (50% of maximum quantum efficiency) of 2.4 micron (Type 1) and 2.15 micron (Type 2). The Type 1 HPT was composed of Al0.25Ga0.75As0.02Sb0.98 and In0.18Ga0.82As0.17Sb0.83 layers with room-temperature bandgaps of Eg approximates 1.0 eV and Eg approximates 0.54 eV, respectively. The layers are lattice-matched to a GaSb substrate. The growth started with a 0.15micron-thick n+-GaSb buffer layer and was completed with a 0.1 m-thick n+- GaSb contact layer doped with Te. The HPT structure includes a 0.5 m-thick n-type AlGaAsSb emitter, 0.8 micron-thick p-type composite base consisting of AlGaAsSb (0.3 m) and InGaAsSb (0.5 m) layers, and a 1.5micron - thick n type InGaAsSb collector. The Type 2 HPT differed by a higher bandgap In0.16Ga0.84As 0.14Sb0.86 layers with a room-temperature bandgap of Eg approximates 0.555 eV.

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

NASA Astrophysics Data System (ADS)

Veis, M.; Beran, L.; Zahradnik, M.; Antos, R.; Straka, L.; Kopecek, J.; Fekete, L.; Heczko, O.

2014-05-01

Magneto-optical properties of single crystal of Ni50.1Mn28.4Ga21.5 magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along {100} planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323 K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4 eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

Experimental Determination of the Ionization Energy in TlBr

NASA Astrophysics Data System (ADS)

Hitomi, Keitaro; Onodera, Toshiyuki; Kim, Seong-Yun; Shoji, Tadayoshi; Ishii, Keizo

2015-06-01

The average ionization energy required to excite an electron-hole pair in TlBr was estimated to be 5.50 ± 0.05 eV by comparing the peak position of 59.5-keV gamma rays obtained from four pixels of a pixelated TlBr detector to the peak position obtained from a Si PIN photodiode at room temperature.

X-ray detection with zinc-blende (cubic) GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Gohil, T.; Whale, J.; Lioliou, G.; Novikov, S. V.; Foxon, C. T.; Kent, A. J.; Barnett, A. M.

2016-07-01

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At -5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm-2 and (189.0 ± 0.2) mA cm-2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.

Observation of room-temperature high-energy resonant excitonic effects in graphene

NASA Astrophysics Data System (ADS)

Santoso, I.; Gogoi, P. K.; Su, H. B.; Huang, H.; Lu, Y.; Qi, D.; Chen, W.; Majidi, M. A.; Feng, Y. P.; Wee, A. T. S.; Loh, K. P.; Venkatesan, T.; Saichu, R. P.; Goos, A.; Kotlov, A.; Rübhausen, M.; Rusydi, A.

2011-08-01

Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3 eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers N≈75, thus suggesting a poor screening in graphene. The optical conductivity (σ1) of a resonant exciton scales linearly with the number of graphene layers (up to at least 8 layers), implying the quantum character of electrons in graphene. Furthermore, a prominent excitation at 5.4 eV, which is a mixture of interband transitions from π to π* at the M point and a π plasmonic excitation, is observed. In contrast, for graphite the resonant exciton is not observable but strong interband transitions are seen instead. Supported by theoretical calculations, for N⩽ 28 the σ1 is dominated by the resonant exciton, while for N> 28 it is a mixture between exitonic and interband transitions. The latter is characteristic for graphite, indicating a crossover in the electronic structure. Our study shows that important elementary excitations in graphene occur at high binding energies and elucidate the differences in the way electrons interact in graphene and graphite.

Electrical properties and transport mechanisms of p-znte/n-si heterojunctions

NASA Astrophysics Data System (ADS)

Seyam, M. A. M.; El-Shair, H. T.; Salem, G. F.

2008-03-01

Zinc telluride thin films have been deposited on glass and silicon wafers substrates at room temperature by thermal evaporation technique in a vacuum of 10-5 Torr. The thickness dependence of both the dc electrical resistivity and thermoelectric power of ZnTe were carried out at room temperature and after being annealed over a thickness range from 22 nm to 170 nm. The type of conduction, the carriers concentration and the conduction mechanisms were revealed. The average thermal activation energy Δ E equals to 0.324 eV for the as deposited films and 0.306 eV for annealed films, it is found to correspond with the ionization energy reported for intrinsic defect levels in ZnTe. Seebeck coefficient measurements showed that ZnTe thin films behave as p-type semiconductor and the average value of the free charge carrier concentration is found to be 1.6×1019 cm-3. The built-in voltage, the width of the depletion region, the diode quality factor and the operating conduction mechanisms have been determined from dark current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-ZnTe/ n-Si heterojunctions.

Free standing CuO-MnO2 nanocomposite for room temperature ammonia sensing

NASA Astrophysics Data System (ADS)

Bhuvaneshwari, S.; Papachan, Seethal; Gopalakrishnan, N.

2017-05-01

CuO nanostructures and CuO-MnO2 nanocomposite were successfully synthesized using hydrothermal method without any aid of growth controlling agents. The synthesized CuO nanostructures have monoclinic structure. The XRD pattern of CuO-MnO2 observed with mixed phases of monoclinic CuO and birnessite-type MnO2 which confirms the formation of nanocomposite. SEM images revealed the turmeric-like morphology for CuO and intercalated sheets with flowers on the surface for CuO-MnO2. The length and breadth of turmeric-like structure is about 642.2 nm and 141.8 nm, respectively. The band gap of 1.72 eV for CuO nanostructure and 1.9 eV for CuO-MnO2 nanocomposite were observed from the absorption spectra. The free standing devices of CuO-MnO2 showed nearly a 3 fold increase sensing response to ammonia at room temperature when compared to the constituent CuO. The composite sensor showed response time of 120 s and recovered within 600 s. This enhanced response can be asserted to the peculiar morphology of the composite that provides more adsorption site for gas diffusion to take place.

Lifetime of excess electrons in Cu–Zn–Sn–Se powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikov, G. F., E-mail: ngf@icp.ac.ru; Gapanovich, M. V.; Gremenok, V. F.

2017-01-15

The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to E{sub a} ~ 0.054 eV.

Solid composite electrolytes for lithium batteries

DOEpatents

Kumar, Binod; Scanlon, Jr., Lawrence G.

2001-01-01

Solid composite electrolytes are provided for use in lithium batteries which exhibit moderate to high ionic conductivity at ambient temperatures and low activation energies. In one embodiment, a polymer-ceramic composite electrolyte containing poly(ethylene oxide), lithium tetrafluoroborate and titanium dioxide is provided in the form of an annealed film having a room temperature conductivity of from 10.sup.-5 S cm.sup.-1 to 10.sup.-3 S cm.sup.-1 and an activation energy of about 0.5 eV.

Sodium doping in ZnO crystals

NASA Astrophysics Data System (ADS)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

Hybrid k .p tight-binding model for intersubband optics in atomically thin InSe films

NASA Astrophysics Data System (ADS)

Magorrian, S. J.; Ceferino, A.; Zólyomi, V.; Fal'ko, V. I.

2018-04-01

We propose atomic films of n -doped γ -InSe as a platform for intersubband optics in the infrared and far-infrared range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) and the amount of n -doping of the InSe film, these transitions span from ˜0.7 eV for bilayer to ˜0.05 eV for 15-layer InSe. We use a hybrid k .p theory and tight-binding model, fully parametrized using density-functional theory, to predict their oscillator strengths and thermal linewidths at room temperature.

PAES study of the positron thermal desorption from a Ge(100) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soininen, E.; Schwab, A.; Lynn, K.G.

1991-02-01

Positron induced Auger electron spectroscopy (PAES) from a clean Ge(100) surface was studied as a function of temperature. Three low-energy Auger peaks were detected at 50 eV, 90 eV and 100--150 eV, attributed to M{sub 2,3}M{sub 4}M{sub 4}, M{sub 2,3}M{sub 4}V and M{sub 1}M{sub 4}M{sub 4} Auger transitions, respectively. An estimated 4({plus minus}1)% of the surface trapped positrons annihilate with Ge 3p level electrons. The PAES yield from a Ge(100) surface is reduced at elevated temperatures, in accordance with an activation process found earlier in several Ps fraction experiments. A desorption model adopted from these studies does not accurately describemore » the PAES intensity at higher temperatures ({gt}500 {degree}C), which levels off at 5% of the room temperature value. Possible sources for the discrepancy are discussed. On a Ge(100) surface, an upper limit for the Ps emission near the melting point is 97%. The error in calibration parameters due to the earlier assumption of 100% Ps emission from Ge surfaces seems to induce only small errors to the Ps fraction measurements.« less

Penetration of alkali atoms throughout a graphene membrane: theoretical modeling

NASA Astrophysics Data System (ADS)

Boukhvalov, D. W.; Virojanadara, C.

2012-02-01

Theoretical studies of penetration of various alkali atoms (Li, Na, Rb, Cs) throughout a graphene membrane grown on a silicon carbide substrate are reported and compared with recent experimental results. Results of first principles modeling demonstrate a rather low (about 0.8 eV) energy barrier for the formation of temporary defects in the carbon layer required for the penetration of Li at a high concentration of adatoms, a higher (about 2 eV) barrier for Na, and barriers above 4 eV for Rb and Cs. Experiments prove migration of lithium adatoms from the graphene surface to the buffer layer and SiC substrate at room temperature, sodium at 100 °C and impenetrability of the graphene membrane for Rb and Cs. Differences between epitaxial and free-standing graphene for the penetration of alkali ions are also discussed.

Penetration of alkali atoms throughout a graphene membrane: theoretical modeling.

PubMed

Boukhvalov, D W; Virojanadara, C

2012-03-07

Theoretical studies of penetration of various alkali atoms (Li, Na, Rb, Cs) throughout a graphene membrane grown on a silicon carbide substrate are reported and compared with recent experimental results. Results of first principles modeling demonstrate a rather low (about 0.8 eV) energy barrier for the formation of temporary defects in the carbon layer required for the penetration of Li at a high concentration of adatoms, a higher (about 2 eV) barrier for Na, and barriers above 4 eV for Rb and Cs. Experiments prove migration of lithium adatoms from the graphene surface to the buffer layer and SiC substrate at room temperature, sodium at 100 °C and impenetrability of the graphene membrane for Rb and Cs. Differences between epitaxial and free-standing graphene for the penetration of alkali ions are also discussed.

Kinetic energy of Ps formed by Ore mechanism in Ar gas

NASA Astrophysics Data System (ADS)

Sano, Yosuke; Kino, Yasushi; Oka, Toshitaka; Sekine, Tsutomu

2015-06-01

In order to investigate kinetic energy of positronium(Ps) formed by Ore mechanism, we performed positron annihilation age-momentum correlation (AMOC) measurements in Argas for 5.0 MPa and 7.5 MPa at room temperature. From the time dependence of Doppler broadening of para-Ps (p-Ps) self-annihilation gramma-ray component, we observed Ps slowing down process. Using a simple slowing down model, we obtained the initial kinetic energy of Ps formed by Ore mechanism and Ps-Armomentum transfer cross section. The initial kinetic energy was 3.9 eV which was higher than the kinetic energy of Ps formed at the upper limit of Ore gap. The momentum transfer cross section was 0.019 ± 0.010 nm2 in between 1 eV and 3.9 eV, and was close to the theoretical calculation.

Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew; Landini, Barbara

2015-09-28

Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction,more » single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.« less

Synthesis, structure, optical, photoluminescence and magnetic properties of K2[Co(C2O4)2(H2O)2]·4H2O

NASA Astrophysics Data System (ADS)

Narsimhulu, M.; Hussain, K. A.

2018-06-01

The synthesis, crystal structure, optical, photoluminescence and magnetic behaviour of potassium bis(oxalato)cobaltate(II)tertrahydrate{K2[Co(C2O4)2(H2O)2]·4H2O} are described. The compound was grown at room temperature from mixture of aqueous solutions by slow evaporation method. The X-ray crystallographic data showed that the compound belongs to the monoclinic crystal system with P21/n space group and Z = 4. The UV-visible diffuse absorbance spectra exhibited bands at 253, 285 and 541 nm in the visible and ultraviolet regions. The optical band gap of the compound was estimated as 3.4 eV. At room temperature, an intense photoluminescence was observed from this material around 392 nm when it excited at 254 nm. The variable temperature dc magnetic susceptibility measurements exposed paramagnetic behaviour at high temperatures and antiferromagnetic ordering at low temperatures.

DFT study of structural and electronic properties of MoS2(1-x)Se2x alloy (x = 0.25)

NASA Astrophysics Data System (ADS)

Gusakova, Julia; Gusakov, Vasilii; Tay, Beng Kang

2018-04-01

First-principles calculations have been performed to study the structural features of the monolayer MoS2(1-x)Se2x (x = 0.25) alloy and its electronic properties. We studied the effects of the relative positions of Se atoms in a real monolayer alloy. It was demonstrated that the distribution of the Se atoms between the top and bottom chalcogen planes was most energetically favorable. For a more probable distribution of Se atoms, a MoS2(1-x)Se2x (x = 0.25) monolayer alloy is a direct semiconductor with a fundamental band gap equal to 2.35 eV (calculated with the GVJ-2e method). We also evaluated the optical band gap of the alloy at 77 K (1.86 eV) and at room temperature (1.80 eV), which was in good agreement with the experimentally measured band gap of 1.79 eV.

Probing carbon impurities in hexagonal boron nitride epilayers

NASA Astrophysics Data System (ADS)

Uddin, M. R.; Li, J.; Lin, J. Y.; Jiang, H. X.

2017-05-01

Carbon doped hexagonal boron nitride epilayers have been grown by metal organic chemical vapor deposition. Photocurrent excitation spectroscopy has been utilized to probe the energy levels associated with carbon impurities in hexagonal boron nitride (h-BN). The observed transition peaks in photocurrent excitation spectra correspond well to the energy positions of the bandgap, substitutional donors (CB, carbon impurities occupying boron sites), and substitutional acceptors (CN, carbon impurities occupying nitrogen sites). From the observed transition peak positions, the derived energy level of CB donors in h-BN is ED ˜ 0.45 eV, which agrees well with the value deduced from the temperature dependent electrical resistivity. The present study further confirms that the room temperature bandgap of h-BN is about 6.42-6.45 eV, and the CN deep acceptors have an energy level of about 2.2-2.3 eV. The results also infer that carbon doping introduces both shallow donors (CB) and deep acceptors (CN) via self-compensation, and the energy level of carbon donors appears to be too deep to enable carbon as a viable candidate as an n-type dopant in h-BN epilayers.

Prospects of e-beam evaporated molybdenum oxide as a hole transport layer for perovskite solar cells

NASA Astrophysics Data System (ADS)

Ali, F.; Khoshsirat, N.; Duffin, J. L.; Wang, H.; Ostrikov, K.; Bell, J. M.; Tesfamichael, T.

2017-09-01

Perovskite solar cells have emerged as one of the most efficient and low cost technologies for delivering of solar electricity due to their exceptional optical and electrical properties. Commercialization of the perovskite solar cells is, however, limited because of the higher cost and environmentally sensitive organic hole transport materials such as spiro-OMETAD and PEDOT:PSS. In this study, an empirical simulation was performed using the Solar Cell Capacitance Simulator software to explore the MoOx thin film as an alternative hole transport material for perovskite solar cells. In the simulation, properties of MoOx thin films deposited by the electron beam evaporation technique from high purity (99.99%) MoO3 pellets at different substrate temperatures (room temperature, 100 °C and 200 °C) were used as input parameters. The films were highly transparent (>80%) and have low surface roughness (≤2 nm) with bandgap energy ranging between 3.75 eV and 3.45 eV. Device simulation has shown that the MoOx deposited at room temperature can work in both the regular and inverted structures of the perovskite solar cell with a promising efficiency of 18.25%. Manufacturing of the full device is planned in order to utilize the MoOx as an alternative hole transport material for improved performance, good stability, and low cost of the perovskite solar cell.

Structural, optical and magnetic behaviour of nanocrystalline Volborthite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arvind, Hemant K., E-mail: hemantarvind@gmail.com; Kumar, Sudhish, E-mail: skmlsu@gmail.com; Kalal, Sangeeta

2016-05-06

Nanocrystalline sample of Volborthite (Copper Pyrovanadate: Cu{sub 3}V{sub 2} (OH){sub 2}O{sub 7}.2H{sub 2}O) has been synthesized using wet chemical route and characterized by XRD, SEM, FTIR, UV-Vis-NIR spectroscopic and magnetization measurements. Room temperature X-ray diffraction analysis confirms the single phase monoclinic structure and nanocrystalline nature of Volborthite. The UV-Visible optical absorption spectrum displays two broad absorption peaks in the range of 200-350 nm and 400-1000 nm. The direct band gap is found to be E{sub g}= ∼2.74 eV. Bulk Volborthite was reported to be a natural frustrated antiferromagnet, however our nanocrystalline Volborthite display week ferromagnetic hysteresis loop with very small coercivity andmore » retentivity at room temperature.« less

Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films

NASA Astrophysics Data System (ADS)

Jose, Edwin; Kumar, M. C. Santhosh

2016-09-01

We report the deposition of nanostructured Cu-Zn-S composite thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. The structural, morphological, optical, photoluminescence and electrical properties of Cu-Zn-S thin films are investigated. The results of X-ray diffraction (XRD) and Raman spectroscopy studies indicate that the films exhibit a ternary Cu-Zn-S structure rather than the Cu xS and ZnS binary composite. Scanning electron microscope (SEM) studies show that the Cu-Zn-S films are covered well over glass substrates. The optical band gap energies of the Cu-Zn-S films are calculated using UV-visible absorption measurements, which are found in the range of 2.2 to 2.32 eV. The room temperature photoluminescence studies show a wide range of emissions from 410 nm to 565 nm. These emissions are mainly due to defects and vacancies in the composite system. The electrical studies using Hall effect measurements show that the Cu-Zn-S films are having p-type conductivity.

Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron.

PubMed

Xiao, Peng; Huang, Junhua; Dong, Ting; Xie, Jianing; Yuan, Jian; Luo, Dongxiang; Liu, Baiquan

2018-06-06

For the first time, compounds with lanthanum from the main family element Boron (LaB x ) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaB x thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaB x thin film. LaB x -TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm²·V −1 ·s −1 , which is a subthreshold swing ( SS ) of 0.26 V/decade and a I on / I off ratio larger than 10⁴. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaB x semiconductor may be a new choice for the channel materials in TFTs.

Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Nopparuchikun, Adison; Promros, Nathaporn; Sittimart, Phongsaphak; Onsee, Peeradon; Duangrawa, Asanlaya; Teakchaicum, Sakmongkon; Nogami, Tomohiro; Yoshitake, Tsuyoshi

2017-09-01

By utilizing pulsed laser deposition (PLD), heterojunctions comprised of n-type nanocrystalline (NC) FeSi2 thin films and p-type Si substrates were fabricated at room temperature in this study. Both dark and illuminated current density-voltage (J-V) curves for the heterojunctions were measured and analyzed at room temperature. The heterojunctions demonstrated a large reverse leakage current as well as a weak near-infrared light response. Based on the analysis of the dark forward J-V curves, at the V value  ⩽  0.2 V, we show that a carrier recombination process was governed at the heterojunction interface. When the V value was  >  0.2 V, the probable mechanism of carrier transportation was a space-charge limited-current process. Both the measurement and analysis for capacitance-voltage-frequency (C-V-f ) and conductance-voltage-frequency (G-V-f ) curves were performed in the applied frequency (f ) range of 50 kHz-2 MHz at room temperature. From the C-V-f and G-V-f curves, the density of interface states (N ss) for the heterojunctions was computed by using the Hill-Coleman method. The N ss values were 9.19  ×  1012 eV-1 cm-2 at 2 MHz and 3.15  ×  1014 eV-1 cm-2 at 50 kHz, which proved the existence of interface states at the heterojunction interface. These interface states are the probable cause of the degraded electrical performance in the heterojunctions. Invited talk at 5th Thailand International Nanotechnology Conference (Nano Thailand-2016), 27-29 November 2016, Nakhon Ratchasima, Thailand.

Structural defects caused by swift ions in fluorite single crystals

NASA Astrophysics Data System (ADS)

Assylbayev, Ruslan; Lushchik, Aleksandr; Lushchik, Cheslav; Kudryavtseva, Irina; Shablonin, Evgeni; Vasil'chenko, Evgeni; Akilbekov, Abdirash; Zdorovets, Maxim

2018-01-01

A comparative study of radiation damage caused by the irradiation of oxygen-free calcium fluoride single crystals with ∼GeV 132Xe or 209Bi heavy ions, 100-keV light hydrogen ions (protons) or X-rays at room temperature has been performed. Optical absorption in a wide spectral region from NIR to VUV (1.5-10.5 eV), its dependence on stepwise preheating of the irradiated CaF2 crystals to a certain temperature as well as thermally stimulated luminescence accompanying the main annealing stages have been analyzed. It is shown that in addition to different F-type aggregates, Ca colloids and trifluorine quasi-molecules, complex and temperature stable structural defects responsible for VUV absorption (in particular, the 9.8 eV band) are induced in CaF2 only after irradiation with swift heavy ions. The origin and tentative creation mechanisms of such defects as well as the features of the used irradiation types are considered.

Optical and magneto-optical properties of AuMnSn

NASA Astrophysics Data System (ADS)

Lee, S. J.; Janssen, Y.; Park, J. M.; Cho, B. K.

2006-03-01

We have measured room-temperature magneto-optical properties of AuMnSn on a single-crystalline sample. The maximum polar Kerr rotation was predicted to be very large, about -0.7° at 1.2eV [L. Offernes, P. Ravindran, and A. Kjekshus, Appl. Phys. Lett. 82, 2862 (2003)]. We found the experimental maximum Kerr rotation and ellipticity were about three times smaller than predicted and appeared at energies about 0.6eV higher than predicted, which is possibly due to inaccurate handling of the theory based on the local spin-density approximation to density-function theory for the localized 4d and 5d orbitals in AuMnSn.

Surface-induced dissociation and chemical reactions of C2D4(+) on stainless steel, carbon (HOPG), and two different diamond surfaces.

PubMed

Feketeová, Linda; Zabka, Jan; Zappa, Fabio; Grill, Verena; Scheier, Paul; Märk, Tilmann D; Herman, Zdenek

2009-06-01

Surface-induced interactions of the projectile ion C(2)D(4)(+) with room-temperature (hydrocarbon covered) stainless steel, carbon highly oriented pyrolytic graphite (HOPG), and two different types of diamond surfaces (O-terminated and H-terminated) were investigated over the range of incident energies from a few eV up to 50 eV. The relative abundance of the product ions in dependence on the incident energy of the projectile ion [collision-energy resolved mass spectra, (CERMS) curves] was determined. The product ion mass spectra contained ions resulting from direct dissociation of the projectile ions, from chemical reactions with the hydrocarbons on the surface, and (to a small extent) from sputtering of the surface material. Sputtering of the surface layer by low-energy Ar(+) ions (5-400 eV) indicated the presence of hydrocarbons on all studied surfaces. The CERMS curves of the product ions were analyzed to obtain both CERMS curves for the products of direct surface-induced dissociation of the projectile ion and CERMS curves of products of surface reactions. From the former, the fraction of energy converted in the surface collision into the internal excitation of the projectile ion was estimated as 10% of the incident energy. The internal energy of the surface-excited projectile ions was very similar for all studied surfaces. The H-terminated room-temperature diamond surface differed from the other surfaces only in the fraction of product ions formed in H-atom transfer surface reactions (45% of all product ions formed versus 70% on the other surfaces).

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

NASA Astrophysics Data System (ADS)

Amari, H.; Lari, L.; Zhang, H. Y.; Geelhaar, L.; Chèze, C.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Walther, T.

2011-11-01

Since the band structure of group III- nitrides presents a direct electronic transition with a band-gap energy covering the range from 3.4 eV for (GaN) to 6.2 eV (for AlN) at room temperature as well as a high thermal conductivity, aluminium gallium nitride (AlGaN) is a strong candidate for high-power and high-temperature electronic devices and short-wavelength (visible and ultraviolet) optoelectronic devices. We report here a study by energy-filtered transmission electron microscopy (EFTEM) and energy-dispersive X-ray spectroscopy (EDXS) of the micro structure and elemental distribution in different aluminium gallium nitride epitaxial layers grown by different research groups. A calibration procedure is out-lined that yields the Al content from EDXS to within ~1 at % precision.

Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films

NASA Astrophysics Data System (ADS)

Göde, F.; Güneri, E.; Kariper, A.; Ulutaş, C.; Kirmizigül, F.; Gümüş, C.

2011-11-01

Zinc sulfide films have been deposited on glass substrates at room temperature by the chemical bath deposition technique. The growth mechanism is studied using X-ray diffraction, scanning electron microscopy, optical absorption spectra and electrical measurements. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (100, 200, 300 400 and 500 °C) for 1 h. The annealed film was also characterized by structural, optical and electrical studies. The structural analyses revealed that the as-deposited film was amorphous, but after being annealed at 500 °C, it changed to polycrystalline. The optical band gap is direct with a value of 4.01 eV, but this value decreased to 3.74 eV with annealing temperature, except for the 500 °C anneal where it only decreased to 3.82 eV. The refractive index (n), extinction coefficient (k), and real (ɛ1) and imaginary (ɛ2) parts of the dielectric constant are evaluated. Raman peaks appearing at ~478 cm-1, ~546 cm-1, ~778 cm-1 and ~1082 cm-1 for the annealed film (500 °C) were attributed to [TOl+LAΣ, 2TOΓ, 2LO, 3LO phonons of ZnS. The electrical conductivities of both as-deposited and annealed films have been calculated to be of the order of ~10-10 (Ω cm)-1 .

High-Temperature Annealing of CdZnTe Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, J.; Hwang, S.; Yu, H.

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

High-Temperature Annealing of CdZnTe Detectors

DOE PAGES

Suh, J.; Hwang, S.; Yu, H.; ...

2017-11-10

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

Method for producing high energy electroluminescent devices

DOEpatents

Meyerson, Bernard S.; Scott, Bruce A.; Wolford, Jr., Donald J.

1992-09-29

A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

Optical and Structural Properties of Ion-implanted InGaZnO Thin Films Studied with Spectroscopic Ellipsometry and Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Park, Jun Woo; Jeong, Pil Seong; Choi, Suk-Ho; Lee, Hosun; Kong, Bo Hyun; Koun Cho, Hyung

2009-11-01

Amorphous InGaZnO (IGZO) thin films were grown using RF sputtering deposition at room temperature and their corresponding dielectric functions were measured. In order to reduce defects and increase carrier concentrations, we examined the effect of forming gas annealing and ion implantation. The band gap energy increased with increasing forming gas annealing temperature. We implanted the IGZO thin films with F- ions in order to decrease oxygen vacancies. For comparison, we also implanted InO- ions. Transmission electron microscopy showed that the amorphous phase undergoes transformation to a nanocrystalline phase due to annealing. We also observed InGaZnO4 nanocrystals having an In-(Ga/Zn) superlattice structure. As the annealing temperature increased, the optical gap energy increased due to crystallization. After annealing, we observed an oxygen-vacancy-related 1.9 eV peak for both unimplanted and InO-implanted samples. However, F- ion implantation substantially reduced the amplitude of the 1.9 eV peak, which disappeared completely at a F fluence of 5×1015 cm-2. We observed other defect-related peaks at 3.6 and 4.2 eV after annealing, which also disappeared after F implantation.

Influence of Atomic Hydrogen, Band Bending, and Defects in the Top Few Nanometers of Hydrothermally Prepared Zinc Oxide Nanorods

NASA Astrophysics Data System (ADS)

Al-Saadi, Mubarak J.; Al-Harthi, Salim H.; Kyaw, Htet H.; Myint, Myo T. Z.; Bora, Tanujjal; Laxman, Karthik; Al-Hinai, Ashraf; Dutta, Joydeep

2017-01-01

We report on the surface, sub-surface (top few nanometers) and bulk properties of hydrothermally grown zinc oxide (ZnO) nanorods (NRs) prior to and after hydrogen treatment. Upon treating with atomic hydrogen (H*), upward and downward band bending is observed depending on the availability of molecular H2O within the structure of the NRs. In the absence of H2O, the H* treatment demonstrated a cleaning effect of the nanorods, leading to a 0.51 eV upward band bending. In addition, enhancement in the intensity of room temperature photoluminescence (PL) signals due to the creation of new surface defects could be observed. The defects enhanced the visible light activity of the ZnO NRs which were subsequently used to photocatalytically degrade aqueous phenol under simulated sunlight. On the contrary, in the presence of H2O, H* treatment created an electronic accumulation layer inducing downward band bending of 0.45 eV ( 1/7th of the bulk ZnO band gap) along with the weakening of the defect signals as observed from room temperature photoluminescence spectra. The results suggest a plausible way of tailoring the band bending and defects of the ZnO NRs through control of H2O/H* species.

Absolute laser-intensity measurement and online monitor calibration using a calorimeter at a soft X-ray free-electron laser beamline in SACLA

NASA Astrophysics Data System (ADS)

Tanaka, Takahiro; Kato, Masahiro; Saito, Norio; Owada, Shigeki; Tono, Kensuke; Yabashi, Makina; Ishikawa, Tetsuya

2018-06-01

This paper reports measurement of the absolute intensity of free-electron laser (FEL) and calibration of online intensity monitors for a brand-new FEL beamline BL1 at SPring-8 Angstrom Compact free-electron LAser (SACLA) in Japan. To measure the absolute intensity of FEL, we used a room-temperature calorimeter originally developed for FELs in the hard X-ray range. By using the calorimeter, we calibrated online intensity monitors of BL1, gas monitors (GMs), based on the photoionization of argon gas, in the photon energy range from 25 eV to 150 eV. A good correlation between signals obtained from the calorimeter and GMs was observed in the pulse energy range from 1 μJ to 100 μJ, where the upper limit is nearly equal to the maximum pulse energy at BL1. Moreover, the calibration result of the GMs, measured in terms of the spectral responsivity, demonstrates a characteristic photon-energy dependence owing to the occurrence of the Cooper minimum in the total ionization cross-section of argon gas. These results validate the feasibility of employing the room-temperature calorimeter in the measurement of absolute intensity of FELs over the specified photon energy range.

Antiphase boundaries on low-energy-ion bombarded Ge(001)

NASA Astrophysics Data System (ADS)

Zandvliet, H. J. W.; de Groot, E.

1997-01-01

Surface vacancy and adatom clusters have been created on Ge(001) by bombarding the surface with 800 eV argon ions at various substrate temperatures ranging from room temperature to 600 K. The vacancies preferentially annihilate at the ends rather than at the sides of the dimer rows, resulting in monolayer deep vacancy islands which are elongated in a direction of the dimer rows of the upper terrace. As vacancy islands nucleate and expand, the dimer rows in neighbouring vacancy islands need not, in general, align with each other. An antiphase boundary will develop if two growing vacancy islands meet, but their internal dimer rows are not in the same registry. In contrast to Si(001), where only one type of antiphase boundary is found, we have found three different types of antiphase boundaries on Ge(001). Higher dose (> several monolayers) room temperature ion bombardment followed by annealing at temperatures in the range 400-500 K results in a surface which contains a high density of valleys. In addition to the preference for the annihilation of dimer vacancies at descending versus ascending steps we also suggest that the development of antiphase boundaries drives the roughening of this surface. Finally, several atomic rearrangement events, which might be induced by the tunneling process, are observed after low-dose ion bombardment at room temperature.

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

NASA Technical Reports Server (NTRS)

Dhar, S.; Das, U.; Bhattacharya, P. K.

1986-01-01

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Gapped electronic structure of epitaxial stanene on InSb(111)

DOE PAGES

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Peng; ...

2018-01-11

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement withmore » our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.« less

Gapped electronic structure of epitaxial stanene on InSb(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Cai-Zhi; Chan, Yang-Hao; Chen, Peng

We report that stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement withmore » our first-principles calculations. Lastly, the results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.« less

The optical properties of β-FeSi 2 fabricated by ion beam assisted sputtering

NASA Astrophysics Data System (ADS)

McKinty, C. N.; Kewell, A. K.; Sharpe, J. S.; Lourenço, M. A.; Butler, T. M.; Valizadeh, R.; Colligon, J. S.; Reeson Kirkby, K. J.; Homewood, K. P.

2000-03-01

β-FeSi 2 has been shown to have a minimum direct band gap of 0.87 eV [T.D. Hunt, K.J. Reeson, K.P. Homewood, S.W. Teon, R.M. Gwilliam, B.J. Sealy, Nucl. Instr. and Meth. B 84 (1994) 168-171] which leads to the opportunity for Si based opto-electronics, optical communications and optical interconnects. Electroluminescence has been reported from structures containing β-FeSi 2, which were produced by high dose ion implantation and annealing [D. Leong, M.A. Harry, K.J. Reeson, K.P. Homewood, Nature 387 (12 June 1987) 686]. In this paper we report the formation of β-FeSi 2 by ion beam assisted co-sputtering of Fe and Si in varying percentages. The layers were deposited with a varying Fe/Si ratio, with a Si capping layer applied to prevent oxidation. Separate regions of the sample were investigated at room temperature using optical absorption, to measure the band gap values. Absorption under the fundamental edge was also analysed at room temperature. Further investigations looked at the temperature dependence of the band gap and the absorption under the fundamental edge. The results showed that a variety of Fe/Si ratios produced β-FeSi 2, the formation of which was ascertained by the presence of a suitable band gap value [0.83-0.88 eV]. Absorption under the fundamental edge was shown to follow an exponential Urbach tail [C.H. Grein, S. John, Phys. Rev. B 39 (1989) 1140]. The temperature measurements are in good agreement with the Einstein model.

Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

2018-03-01

High band gap (3.34 eV) and large exciton binding energy (60 meV) at room temperature facilitates ZnO as a useful candidate for optoelectronics devices. Presence of zinc interstitial and oxygen vacancies results in n-type ZnO film. Phosphorus implantation was carried out using plasma immersion ion implantation technique (2kV, 900W) for constant duration (50 s) on RF sputtered ZnO thin films (Sample A). For dopant activation, sample A was subjected to Rapid Thermal Annealing (RTA) at 700, 800, 900 and 1000°C for 10 s in Oxygen ambient (Sample B, C, D, E). Low temperature (18 K) photoluminescence measurement demonstrated strong donor bound exciton peak for sample A. Dominant donor to acceptor pair peak (DAP) was observed for sample D at around 3.22 eV with linewidth of 131.3 meV. High resolution x-ray diffraction measurement demonstrated (001) and (002) peaks for sample A. (002) peak with high intensity was observed from all annealed samples. Incorporation of phosphorus in ZnO films leads to peak shift towards higher 2θ angle indicate tensile strain in implanted samples. Scanning electron microscopy images reveals improvement in grain size distribution along with reduction of implantation related defects. Raman spectra measured A1(LO) peak at around 576 cm-1 for sample A. Low intensity E2 (high) peak was observed for sample D indicating formation of (PZn+2VZn) complexes. From room temperature Hall measurement, sample D measured 1.17 x 1018 cm -3 carrier concentration with low resistivity of 0.464 Ω.

Semiconducting and quartz microbalance (QCM) humidity sensor properties of TiO2 by sol gel calcination method

NASA Astrophysics Data System (ADS)

Yakuphanoglu, Fahrettin

2012-06-01

Titanium dioxide (TiO2) material was synthesized using the sol gel calcination method. The structural properties of the TiO2 semiconductor were investigated by atomic force microscopy. The electrical conductivity of the TiO2 was measured as a function of temperature and TiO2 exhibits a conductivity of 2.55 × 10-6 S/m at room temperature with activation energy of 104 meV. The electrical conductivity of the TiO2 at room temperature is higher than that of nanocrystalline TiO2 (3 × 10-7 S/m) and TiO2 thin film in air (5 × 10-9 S/m) and in vacuum (8.8 × 10-10 S/m). It was found that the electrical transport mechanism of the TiO2 is controlled by thermally activated mechanism. The optical band gap of the TiO2 powder sample was determined to be 3.17 eV, which is good in agreement with the bulk TiO2 (Eg = 3.2 eV). Up to our knowledge, there is no any reported data about the band gap of TiO2 nanopowder based on the diffused reflectance calculation. Quartz crystal microbalance (QCM) TiO2 humidity sensor was prepared. The sensor indicates a large frequency change with an interaction occurred between TiO2 and humidity molecules. The sensor exhibits a good repeatability when it was exposed to the moist air of 65% RH.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Machado, Thales R.; QIO-UJI, Universitat Jaume I, 12071 Castellón; Sczancoski, Júlio C.

Defect-related photoluminescence (PL) in materials have attracted interest for applications including near ultraviolet (NUV) excitable light-emitting diodes and in biomedical field. In this paper, hydroxyapatite [Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}] nanorods with intense PL bands (bluish- and yellowish-white emissions) were obtained when excited under NUV radiation at room temperature. These nanoparticles were synthesized via chemical precipitation at 90 °C followed by distinct heat treatments temperatures (200–800 °C). Intense and broad emission profiles were achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). UV–Vis spectroscopy revealed band gap energies (5.58–5.78 eV) higher than the excitation energies (~3.54 and ~2.98more » eV at 350 and 415 nm, respectively), confirming the contribution of defect energy levels within the forbidden zone for PL emissions. The structural features were characterized by X-ray diffraction, Rietveld refinement, thermogravimetric analysis, and Fourier transform infrared spectroscopy. By means of these techniques, the relation between structural order-disorder induced by defects, chemical reactions at both lattice and surface of the materials as well as the PL, without activator centers, was discussed in details. - Graphical abstract: The self-activated photoluminescence emissions of chemically precipitated hydroxyapatite nanorods were improved by different heat treatment temperatures. - Highlights: • HA nanorods were synthesized with improved self-activated PL at room temperature. • PL profile and intensity dependents on the temperature of posterior heat treatments. • Bluish- and yellowish-white emissions under NUV excitation (350 and 415 nm). • Broad and intense profiles achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). • PL from the e′–h{sup •} recombination between defect energy levels within the band gap.« less

Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation

NASA Astrophysics Data System (ADS)

Mamor, M.; Auret, F. D.; Goodman, S. A.; Meyer, W. E.; Myburg, G.

1998-06-01

Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6-8×1016cm-3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10-15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique.

Enhanced ferromagnetic properties in Nd and Gd co-doped BiFeO3 ceramics

NASA Astrophysics Data System (ADS)

Jena, A. K.; Chelvane, J. Arout; Mohanty, J.

2018-05-01

Structural, optical and magnetic properties of Nd3+ and Gd3+ doped BiFeO3 were studied. X-ray diffraction studies confirmed that all the co-doped Bi1-x-yNdxGdyFeO3 samples are polycrystalline in nature crystallizing in rhombohedral type structure (Space group: R3c). In addition to this presence of residual phases like Bi2Fe4O9, Bi25FeO40 were also observed. Raman spectra confirms the structural distortion in co-doped ceramics. Band gap of samples decrease from 2.08eV to 1.95eV with increase in Gd concentration. Room temperature magnetization measurement indicated enhancement of magnetic properties with increase in Gd concentration.

First-principles study of direct and indirect optical absorption in BaSnO3

NASA Astrophysics Data System (ADS)

Kang, Youngho; Peelaers, Hartwin; Krishnaswamy, Karthik; Van de Walle, Chris G.

2018-02-01

We report first-principles results for the electronic structure and the optical absorption of perovskite BaSnO3 (BSO). BSO has an indirect fundamental gap, and hence, both direct and indirect transitions need to be examined. We assess direct absorption by calculations of the dipole matrix elements. The phonon-assisted indirect absorption spectrum at room temperature is calculated using a quasiclassical approach. Our analysis provides important insights into the optical properties of BSO and addresses several inconsistencies in the results of optical absorption experiments. We shed light on the variety of bandgap values that have been previously reported, concluding that the indirect gap is 2.98 eV and the direct gap is 3.46 eV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wahab, Rizwan; Ansari, S.G.; Kim, Y.S.

Synthesis of flower-shaped ZnO nanostructures composed of hexagonal ZnO nanorods was achieved by the solution process using zinc acetate dihydrate and sodium hydroxide at very low temperature of 90 deg. C in 30 min. The individual nanorods are of hexagonal shape with sharp tip, and base diameter of about 300-350 nm. Detailed structural characterizations demonstrate that the synthesized products are single crystalline with the wurtzite hexagonal phase, grown along the [0 0 0 1] direction. The IR spectrum shows the standard peak of zinc oxide at 523 cm{sup -1}. Raman scattering exhibits a sharp and strong E{sub 2} mode atmore » 437 cm{sup -1} which further confirms the good crystallinity and wurtzite hexagonal phase of the grown nanostructures. The photoelectron spectroscopic measurement shows the presence of Zn, O, C, zinc acetate and Na. The binding energy ca. 1021.2 eV (Zn 2p{sub 3/2}) and 1044.3 eV (Zn 2p{sub 1/2}), are found very close to the standard bulk ZnO binding energy values. The O 1s peak is found centered at 531.4 eV with a shoulder at 529.8 eV. Room-temperature photoluminescence (PL) demonstrate a strong and dominated peak at 381 nm with a suppressed and broad green emission at 515 nm, suggests that the flower-shaped ZnO nanostructures have good optical properties with very less structural defects.« less

Temperature dependent recombination dynamics in InP/ZnS colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Shirazi, R.; Kopylov, O.; Kovacs, A.; Kardynał, B. E.

2012-08-01

In this letter, we investigate exciton recombination in InP/ZnS core-shell colloidal nanocrystals over a wide temperature range. Over the entire range between room temperature and liquid helium temperature, multi-exponential exciton decay curves are observed and well explained by the presence of bright and dark exciton states, as well as defect states. Two different types of defect are present: one located at the core-shell interface and the other on the surface of the nanocrystal. Based on the temperature dependent contributions of all four states to the total photoluminescence signal, we estimate that the four states are distributed within a 20 meV energy band in nanocrystals that emit at 1.82 eV.

Role of oxygen vacancies on light emission mechanisms in SrTiO 3 induced by high-energy particles

DOE PAGES

Crespillo, M. L.; Graham, J. T.; Agulló-López, F.; ...

2017-02-23

Light emission under MeV hydrogen and oxygen ions in stoichiometric SrTiO 3 are identified at temperatures of 100 K, 170 K and room-temperature. MeV ions predominately deposit their energies to electrons in SrTiO 3 with energy densities orders of magnitude higher than from UV or x-ray sources but comparable to femtosecond lasers. The ionoluminescence (IL) spectra can be resolved into three main Gaussian bands at 2.0 eV, 2.5 eV and 2.8 eV, whose relative contributions strongly depend on irradiation temperature, electronic energy loss and irradiation fluence. Two main bands, observed at 2.5 eV and 2.8 eV, are intrinsic and associatedmore » with electron–hole recombination in the perfect SrTiO 3 lattice. The 2.8 eV band is attributed to recombination of free (conduction) electrons with an in-gap level, possibly related to self-trapped holes. Self-trapped excitons (STEs) are considered suitable candidates for the 2.5 eV emission band, which implies a large energy relaxation in comparison to the intrinsic edge transition. The dynamics of electronic excitation, governs a rapid initial rise of the intensity; whereas, accumulated irradiation damage (competing non-radiative recombination channels) accounts for a subsequent intensity decrease. The previously invoked role of isolated oxygen vacancies for the blue luminescence (2.8 eV) does not appear consistent with the data. An increasing well-resolved band at 2.0 eV dominates at 170 K and below. It has been only previously observed in heavily strained and amorphous SrTiO 3, and is, here, attributed to transitions from d(t 2g) conduction band levels to d(e g) levels below the gap. In accordance with ab initio theoretical calculations they are associated to trapped electron states in relaxed Ti 3+ centers at an oxygen vacancy within distorted TiO 6 octahedra. The mechanism of defect evolution monitored during real-time IL experiments is presented. In conclusion, the light emission data confirm that IL is a useful tool to investigate lattice disorder in irradiated SrTiO 3.« less

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

NASA Astrophysics Data System (ADS)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

Thallium Bromide as an Alternative Material for Room-Temperature Gamma-Ray Spectroscopy and Imaging

NASA Astrophysics Data System (ADS)

Koehler, William

Thallium bromide is an attractive material for room-temperature gamma-ray spectroscopy and imaging because of its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm3), and a wide bandgap (2.68 eV). In this work, 5 mm thick TlBr detectors achieved 0.94% FWHM at 662 keV for all single-pixel events and 0.72% FWHM at 662 keV from the best pixel and depth using three-dimensional position sensing technology. However, these results were limited to stable operation at -20°C. After days to months of room-temperature operation, ionic conduction caused these devices to fail. Depth-dependent signal analysis was used to isolate room-temperature degradation effects to within 0.5 mm of the anode surface. This was verified by refabricating the detectors after complete failure at room temperature; after refabrication, similar performance and functionality was recovered. As part of this work, the improvement in electron drift velocity and energy resolution during conditioning at -20°C was quantified. A new method was developed to measure the impurity concentration without changing the gamma ray measurement setup. The new method was used to show that detector conditioning was likely the result of charged impurities drifting out of the active volume. This space charge reduction then caused a more stable and uniform electric field. Additionally, new algorithms were developed to remove hole contributions in high-hole-mobility detectors to improve depth reconstruction. These algorithms improved the depth reconstruction (accuracy) without degrading the depth uncertainty (precision). Finally, spectroscopic and imaging performance of new 11 x 11 pixelated-anode TlBr detectors was characterized. The larger detectors were used to show that energy resolution can be improved by identifying photopeak events from their Tl characteristic x-rays.

Low-cost fabrication of highly sensitive room temperature hydrogen sensor based on ordered mesoporous Co-doped TiO2 structure

NASA Astrophysics Data System (ADS)

Li, Zhong; Haidry, Azhar Ali; Wang, Tao; Yao, Zheng Jun

2017-07-01

The development of cost-effective gas sensors with improved sensing properties and minimum power consumption for room temperature hydrogen leakage monitoring is in increasing demand. In this context, this report focus on the facile fabrication of ordered mesoporous TiO2 via evaporation-induced self-assembly route. With the controlled doping threshold (3%Co-TiO2), the output resistance change to 1000 ppm H2 is ˜4.1 × 103 with the response time of 66 s. The sensor response exhibits power law dependence with an increase in the hydrogen concentration, where the power law coefficient was found not only specific to the kind of target gas but also related to temperature. Further, the effect of structure integrity with doping level and humidity on sensing characteristics is interpreted in terms of variation in surface potential eVS and depletion region w caused by the adsorption of molecular oxygen O2-.

Logarithmic detrapping response for holes injected into SiO2 and the influence of thermal activation and electric fields

NASA Astrophysics Data System (ADS)

Lakshmanna, V.; Vengurlekar, A. S.

1988-05-01

Relaxation of trapped holes that are introduced into silicon dioxide from silicon by the avalanche injection method is studied under various conditions of thermal activation and external electric fields. It is found that the flat band voltage recovery in time follows a universal behavior in that the response at high temperatures is a time scaled extension of the response at low temperatures. Similar universality exists in the detrapping response at different external bias fields. The recovery characteristics show a logarithmic time dependence in the time regime studied (up to 6000 s). We find that the recovery is thermally activated with the activation energy varying from 0.5 eV for a field of 2 MV/cm to 1.0 eV for a field of -1 MV/cm. There is little discharge in 3000 s at room temperature for negative fields beyond -4 MV/cm. The results suggest that the recovery is due to tunneling of electrons in the silicon conduction band into the oxide either to compensate or to remove the charge of trapped holes.

AC Conductivity and Dielectric Properties of Borotellurite Glass

NASA Astrophysics Data System (ADS)

Taha, T. A.; Azab, A. A.

2016-10-01

Borotellurite glasses with formula 60B2O3-10ZnO-(30 - x)NaF- xTeO2 ( x = 0 mol.%, 5 mol.%, 10 mol.%, and 15 mol.%) have been synthesized by thermal melting. X-ray diffraction (XRD) analysis confirmed that the glasses were amorphous. The glass density ( ρ) was determined by the Archimedes method at room temperature. The density ( ρ) and molar volume ( V m) were found to increase with increasing TeO2 content. The direct-current (DC) conductivity was measured in the temperature range from 473 K to 623 K, in which the electrical activation energy of ionic conduction increased from 0.27 eV to 0.48 eV with increasing TeO2 content from 0 mol.% to 15 mol.%. The dielectric parameters and alternating-current (AC) conductivity ( σ ac) were investigated in the frequency range from 1 kHz to 1 MHz and temperature range from 300 K to 633 K. The AC conductivity and dielectric constant decreased with increasing TeO2 content from 0 mol.% to 15 mol.%.

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roul, Basanta; Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560013

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TEmore » and TFE models were 1.08 and 1.43 eV, respectively.« less

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1986-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1985-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Electrical characterization and vibrational spectroscopic investigations of order-disorder phase transitions in [N(C3H7)4]2CoCl4 compound

NASA Astrophysics Data System (ADS)

Moutia, N.; Ben Gzaiel, M.; Oueslati, A.; Khirouni, K.

2017-04-01

The present paper accounts for the vibrational spectroscopy and electrical characterization of a bis-tetrapropylammonium tetrachlorocobaltate grown at room temperature by slow evaporation of aqueous solution. The Raman spectra were studied in the range of 50-3500 cm-1 as a function of temperature of 318 K-421 K. The most important changes are observed for the band at 1032 cm-1 associated to δ(C - C - C) + t(CH2) + ω(CH2) . A detail analysis of the frequency and half-width is quantitatively described in term of an order-disorder model allowed to obtain information relative to the thermal coefficient and activation energy. The decrease of the activation energy with increasing temperature has been interpreted in term of a change in the re-orientation motion of the cationic parts [N(C3H7)4]+. Besides, the impedance measurements indicate that the electrical properties are strongly temperature dependent. Nyquist plots (-Z″versus Z‧) show that the conductivity behavior is accurately represented by an equivalent circuit models which consists of a series combination of grains interior and grains boundary. The conductivity follows the Arrhenius relation with different activation energies and conduction mechanisms: three temperature regions with activation energies EaI = 0.78 eV and EaII = 0.81 eV and EaIII = 0.93 eV. Furthermore, the modulus plots can be characterized by full width at half height or in term of a non-experiential decay function ϕ(t) = exp(-1/τ) β .

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

NASA Astrophysics Data System (ADS)

Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul

2013-03-01

Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current-voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor (n), reverse saturation current (Io), interface state density (Nss) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current-voltage data measured in the temperature range 100-320 K and capacitance-voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brötzmann et al. [M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10-11 A to 2.79×10-7 A and interface state density have ranged from 5×1011 eV-1 cm-2 and 4×1013 eV-1 cm-2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.

Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

NASA Astrophysics Data System (ADS)

Choi, Seon Bin; Song, Man Suk; Kim, Yong

2018-04-01

The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

A promising p-type transparent conducting material: Layered oxysulfide [Cu2S2][Sr3Sc2O5

NASA Astrophysics Data System (ADS)

Liu, Min-Ling; Wu, Li-Bin; Huang, Fu-Qiang; Chen, Li-Dong; Chen, I.-Wei

2007-12-01

Sr3Cu2Sc2O5S2, a layered oxysulfide, composed of anti-PbO-like [Cu2S2] slabs alternating with perovskitelike [Sr3Sc2O5] slabs, was systematically studied as a p-type transparent conducting material. The material has a wide energy gap of 3.1eV and a p-type electrical conductivity of 2.8Scm-1 at room temperature. The hole mobility of +150cm2V-1S-1 at room temperature, which is much higher than the typical value of ˜10-1-10width="0.3em"/>cm2V-1S-1 found in other copper compounds. The performances of bulk undoped Sr3Cu2Sc2O5S2 show the promise of copper oxysulfides as a class of p-type transparent conductive materials that is essential for optoelectronic applications.

Study of Sb2S3 thin films deposited by SILAR method

NASA Astrophysics Data System (ADS)

Deshpande, M. P.; Chauhan, Krishna; Patel, Kiran N.; Rajput, Piyush; Bhoi, Hiteshkumar R.; Chaki, S. H.

2018-05-01

In the present work, we deposited Sb2S3 thin films on glass slide by successive ionic layer adsorption and reaction (SILAR) technique with different time cycles. From EDAX, we could observe that the films were non-stoichiometric and contained few elements from glass slide. X-ray diffraction has shown that these films are orthorhombic in structure from where we have calculated the lattice parameter and crystallize size. SEM images shows that SILAR synthesized Sb2S3 thin films are homogenous and well distributed indicating the formation of uniform thin films at lower concentration. The room temperature Raman spectra of Sb2S3 thin films showed sharp peaks at 250 cm‑1 and 300 cm‑1 for all cases. Room temperature photoluminescence emission spectrum shows broad bands over 430–480 nm range with strong blue emission peak centered at same wavelength of 460 nm (2.70 eV) for all cases.

Defect annealing in electron-irradiated boron-doped silicon

NASA Astrophysics Data System (ADS)

Awadelkarim, O. O.; Chen, W. M.; Weman, H.; Monemar, B.

1990-01-01

Defects introduced by room-temperature electron irradiation and subsequent annealing in boron-doped silicon are studied by means of deep-level transient spectroscopy, photoluminescence, and optical detection of magnetic resonance (ODMR) techniques. ODMR reveals a thermally induced paramagnetic (S=(1/2) defect center that is produced following annealing at 400 °C. The center possesses a C3v point-group symmetry with the trigonal axis along <111>. Detailed analysis of the ODMR line shapes indicates the involvement of a silicon atom in the defect center. It appears from the results that boron is either another possible defect component or an essential catalyst for the defect formation. The occurrence of the ODMR signal together with a luminescence band peaking at 0.80 eV is independent of oxygen or carbon contents in the samples. The band does not belong to the center observed by ODMR; however, a decrease in its intensity, under resonance conditions in the ODMR center, is explained in terms of carrier recombination, capture, or energy-transfer processes involving this center. Annealing studies on a metastable hole trap observed at Ev+0.12 eV (Ev being the top of the valence band) establish the trap assignment to a carbon-interstitial-carbon-substitutional pair. The introduction of postannealing traps observed at Ev+0.07 eV, Ev+0.45 eV, and Ec-0.59 eV (Ec being the conduction-band edge) is found to be boron dependent. Isothermal formation of the centers responsible for these traps are observed, and none of the traps appears to be related to either the center observed by ODMR or the 0.80-eV band.

Pressure dependence of thermal physical properties of A-type R2O3 (R=Y, La): A first-principles study

NASA Astrophysics Data System (ADS)

Li, Y. F.; Xiao, B.; Sun, L.; Gao, Y. M.; Ma, S. Q.; Yi, D. W.

2017-04-01

The mechanical, electronic and thermal physical properties of A-type R2O3 (R=Y, La) under hydrostatic pressure are studied by first-principles calculations. The calculated band gap is 6.3 eV (5.9 eV) for Y2O3 (La2O3). Under hydrostatic pressure, both phases show anisotropic elasticity in different crystallographic directions. The isothermal bulk modulus of R2O3 decreases monotonically with the increasing of temperature from 300 K to 1500 K. The intrinsic ductile nature of both phases is confirmed by the obtained B/G ratio. The temperature dependence of linear TECs of La2O3 is stronger than that of Y2O3, and the linear TECs in [001] direction show larger values in both phases than those in [010] direction. At room temperature, the average linear TECs for Y2O3 and La2O3 are 8.40×10-6 K-1 and 8.42×10-6 K-1, respectively. Other thermal physical properties such as specific heats (CV, and CP), entropy (S), sound velocity and Debye temperature are also obtained.

Structural, optical, magnetic and electrical properties of hematite (α-Fe2O3) nanoparticles synthesized by two methods: polyol and precipitation

NASA Astrophysics Data System (ADS)

Mansour, Houda; Letifi, Hanen; Bargougui, Radhouane; De Almeida-Didry, Sonia; Negulescu, Beatrice; Autret-Lambert, Cécile; Gadri, Abdellatif; Ammar, Salah

2017-12-01

Hematite (α-Fe2O3) nanoparticles have been successfully synthesized via two methods: (1) polyol and (2) precipitation in water. The influence of synthesis methods on the crystalline structure, morphological, optical, magnetic and electrical properties were investigated using X-ray diffraction, RAMAN spectroscopy, scanning electron microscopy, transmission electron microscopy, UV-visible diffuse reflectance spectroscopy (UV-vis DRS), superconducting quantum interference device and impedance spectroscopy. The structural properties showed that the obtained hematite α-Fe2O3 nanoparticles with two preparation methods exhibit hexagonal phase with high crystallinity and high-phase stability at room temperature. It was found that the average hematite nanoparticle size is estimated to be 36.86 nm for the sample synthesized by precipitation and 54.14 nm for the sample synthesized by polyol. Moreover, the optical properties showed that the band gap energy value of α-Fe2O3 synthesized by precipitation (2.07 eV) was higher than that of α-Fe2O3 synthesized by polyol (1.97 eV) and they showed a red shift to the visible region. Furthermore, the measurements of magnetic properties indicated a magnetization loop typical of ferromagnetic systems at room temperature. Measurements of electrical properties show higher dielectric permittivity (5.64 × 103) and relaxation phenomenon for α-Fe2O3 issued from the precipitation method than the other sample.

Optical properties and plasmonic response of silver-gallium nanostructures

DOE PAGES

Lereu, Aude; Lemarchand, F.; Zerrad, M.; ...

2015-02-12

Silver and gallium form an alloy Ag 2Ga via a room temperature spontaneous self-assembly that exhibits remarkable mechanical and electrical properties [1] suitable for nanoscale measurements [2]. However, whether photon excitation of plasmons in this emerging nanomaterial is retained or not has not been established. Here, we present a thin lm formation of Ag 2Ga via a spreading- reactive process of liquid Ga on an Ag lm and a characterization of its dielectric function (E) = 1(E) - i 2(E) in the photon energy range 1.42 eV E <4.2 eV. It is observed that while the plasmon damping increases, nearmore » an energy of 3.4 eV, the real part of exhibits a crossing with respect to that of Ag. Furthermore, the impact of new plasmon supporting materials [3] is discussed and in order to enable further applications in plasmonics, the possibility of photon excitation of surface plasmons in Ag 2Ga is studied.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yongli; Wang, Xianjie; Sui, Yu

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, andmore » that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.« less

Optical properties of titanium-di-oxide (TiO2) prepared by hydrothermal method

NASA Astrophysics Data System (ADS)

Rahman, Kazi Hasibur; Biswas, Sayari; Kar, Asit Kumar

2018-05-01

Research on titanate and its derived TiO2 nanostructures with large specific surface area have received great attention due to their enhanced efficiency in photocatalysis, DSSC etc. Here, in this communication TiO2 powder has been prepared by hydrothermal method at 180 °C. In this work we have shown the changes in optical properties of the powder with two different sintering temperatures ‒ 500 °C and 800 °C. The as prepared powder was also studied. FESEM images show spherical particles for the as prepared samples which look more like agglomeration after sintering. Band gaps of the prepared samples were calculated from UV-Vis spectroscopy which lies in the range 2.85 eV ‒ 3.13 eV. The photoluminescence (PL) spectra of the prepared samples were recorded at room temperature in the range of 300‒700 nm. It shows two distinct peaks at 412 nm and 425 nm.

Characterization of hydrogenated amorphous silicon films obtained from rice husk

NASA Astrophysics Data System (ADS)

Nandi, K. C.; Mukherjee, D.; Biswas, A. K.; Acharya, H. N.

1991-08-01

Hydrogenated amorphous silicon ( a-Si: H) films were prepared by chemical vapour deposition (CVD) of silanes generated by the acid hydrolysis of magnesium silicide (Mg 2Si) obtained from rice husk. The films were deposited at various substrate temperatures ( Ts) ranging from 430 to 520°C. The results show that the films have room temperature (294 K) dark conductivity (σ d) of the order of 10 -8 - 10 -10 (ohm-cm) -1 with single activation energy (Δ Ed) and the photoconductivity (σ ph) decreases with increase of Ts. Optical band gap ( Eopt) lies between 1.60-1.73 eV and hydrogen content ( CH) in the films is at best 8.3 at %. Au/ a-Si: H junction shows that it acts as a rectifier contact with Schottky barrier height ( VB) 0.69 eV. The films are contaminated by traces of impurities like Na, K, Al, Cl and O as revealed by secondary ion mass spectrometric (SIMS) analysis.

Structural and optical properties of AgIn5S8

NASA Astrophysics Data System (ADS)

Rincón, Carlos A. Durante; Durán, Larissa T.; Medina, Josefa Estévez; Castro, Jaime A.; León, Máximo; Fermín, Jose R.

2017-12-01

Compounds of the chalcogenide family Ag-In-VI (VI = S, Se, Te) are interesting materials due to their stoichiometric stability and potential application in nonlinear optics and solar cells. A polycrystalline ingot of AgIn5S8, an ordered vacancy semiconductor, was prepared by direct fusion of the stoichiometric mixture of the elements in an evacuated quartz ampoule. The presence of a single phase with cubic structure was confirmed by X-ray powder diffraction at room temperature. The lattice parameter, a, was calculated, giving 10.821750 Å. Samples in evacuated quartz ampoules were used to perform Differential Thermal Analysis measurements, showing congruent melting at 1110∘C. Transmittance and reflectivity measurements were used to calculate the absorption coefficient α. From the plot of (αhν)2 versus hν, two direct transitions are observed at 1.25 eV and 1.88 eV. While the higher energy direct transition has been observed by other authors, the direct nature of the lower energy transition was confirmed from the fitting of the plot of the reflectivity versus 1/hν between 0.53 eV-1 (1.89 eV) and 0.55 eV-1 (1.82 eV), obtaining a value of 1.29 eV. The real refractive index n and the high-frequency dielectric constant 𝜀∞ were also obtained from the fit of the reflectivity, resulting to be 2.68 and 7.2, respectively.

Synthesis and Physical Properties Characterization of CdSe1-ySy Nanolayers Deposited by Chemical Bath Deposition at Low-Temperature Treatment

NASA Astrophysics Data System (ADS)

Flores-Mena, J. E.; Contreras-Rascón, J. I.; Diaz-Reyes, J.; Castillo-Ojeda, R. S.

In this work, we present the synthesis and structural and optical characterizations of CdSe1-y S y deposited by chemical bath deposition (CBD) technique on corning glass at a temperature of 20 ± 2 °C. The sulfur molar fraction was varied from 0 to 42.13 %, which was realized by varying the thiourea volume added to the growth solution in the range from 0 to 30 mL. The chemical stoichiometry was estimated by energy dispersive spectrometry (EDS). The CdSe1-y S y showed hexagonal wurtzite crystalline phase that was found by X-ray diffraction (XRD) analysis and Raman spectroscopy. The average grain size range of the films was 1.48-1.68 nm that was determined using the Debye-Scherrer equation W(002) direction and was confirmed by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behavior and the multipeaks adjust to the first optical longitudinal mode for the CdSeS, in all cases, Raman spectra show two dominant vibrational bands about 208 and 415 cm-1 associated at CdSe-1LO-like and CdSe-2LO-like. CdSe1-y S y band gap energy can be varied from 1.86 to 2.16 eV by varying the thiourea volume added in growth solution in the investigated range obtained by transmittance measurements at room temperature. The room temperature photoluminescence shows a dominant radiation band at about 3.0 eV that can be associated with exciton bonded to donor impurity and the quantum confinement because of the grain size is less than the Bohr radius.

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

NASA Astrophysics Data System (ADS)

Lee, Kai-Hsuan; Chang, Ping-Chuan; Chen, Tse-Pu; Chang, Sheng-Po; Shiu, Hung-Wei; Chang, Lo-Yueh; Chen, Chia-Hao; Chang, Shoou-Jinn

2013-02-01

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Ordinary dielectric function of corundumlike α -Ga2O3 from 40 meV to 20 eV

NASA Astrophysics Data System (ADS)

Feneberg, Martin; Nixdorf, Jakob; Neumann, Maciej D.; Esser, Norbert; Artús, Lluis; Cuscó, Ramon; Yamaguchi, Tomohiro; Goldhahn, Rüdiger

2018-04-01

The linear optical response of metastable α -Ga2O3 is investigated by spectroscopic ellipsometry. We determine the ordinary dielectric function from lattice vibrations up to the vacuum ultraviolet spectral range at room temperature for a sample with a (0001 ) surface. Three out of four Eu infrared-active phonon modes are unambiguously determined, and their frequencies are in good agreement with density functional theory calculations. The dispersion of the refractive index in the visible and ultraviolet part of the spectrum is determined. High-energy interband transitions are characterized up to 20 eV . By comparison with the optical response of α -Al2O3 and with theoretical results, a tentative assignment of interband transitions is proposed.

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kai-Hsuan; Chen, Chia-Hao; Chang, Ping-Chuan

2013-02-18

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Dielectric properties of Ti4+ substituted BaFe12O19 nanoparticles

NASA Astrophysics Data System (ADS)

Ghoneim, A. I.; Amer, M. A.; Meaz, T. M.; Attalah, S. S.

2017-02-01

Series of nanocrystalline BaTixFe12-(4/3)xO19 hexagonal ferrites, 0≤x≤1, was prepared using the chemical co-precipitation method. As-prepared samples were heated at 1200 °C for 20 h and slowly cooled to room temperature (RT). XRD studies proved that the samples have single phase M-type hexagonal nanostructure, where their grain size lies in the range of 42.4 - 61.3 nm. Their dielectric properties were studied against temperature (T) and frequency (F). DC conductivity showed increase against T, whereas AC conductivity showed increase with increasing both T and F. This proved the semiconducting behavior of the samples. Activation energies were found to lie in the range of 0.054-0.169 eV for temperature range of RT 373 K and of 0.114-0.274 eV for higher temperatures up to 473 K. Variation of the dielectric constant and AC conductivity against F revealed dispersion in all these hexagonal nanostructures, which was assigned to Maxwell-Wagner type of interfacial polarization. Variation of the dielectric loss tangent against F showed a relaxation spectrum for all samples, whereas the dielectric constant and loss tangent showed an increasing trend against T. The relative magnetic permeability μr showed an increasing trend with temperature.

First-principles studies of electronic, transport and bulk properties of pyrite FeS2

NASA Astrophysics Data System (ADS)

Banjara, Dipendra; Malozovsky, Yuriy; Franklin, LaShounda; Bagayoko, Diola

2018-02-01

We present results from first principle, local density approximation (LDA) calculations of electronic, transport, and bulk properties of iron pyrite (FeS2). Our non-relativistic computations employed the Ceperley and Alder LDA potential and the linear combination of atomic orbitals (LCAO) formalism. The implementation of the LCAO formalism followed the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). We discuss the electronic energy bands, total and partial densities of states, electron effective masses, and the bulk modulus. Our calculated indirect band gap of 0.959 eV (0.96), using an experimental lattice constant of 5.4166 Å, at room temperature, is in agreement with the measured indirect values, for bulk samples, ranging from 0.84 eV to 1.03 ± 0.05 eV. Our calculated bulk modulus of 147 GPa is practically in agreement with the experimental value of 145 GPa. The calculated, partial densities of states reproduced the splitting of the Fe d bands to constitute the dominant upper most valence and lower most conduction bands, separated by the generally accepted, indirect, experimental band gap of 0.95 eV.

Neon ion beam induced pattern formation on amorphous carbon surfaces

NASA Astrophysics Data System (ADS)

Bobes, Omar; Hofsäss, Hans; Zhang, Kun

2018-02-01

We investigate the ripple pattern formation on amorphous carbon surfaces at room temperature during low energy Ne ion irradiation as a function of the ion incidence angle. Monte Carlo simulations of the curvature coefficients applied to the Bradley-Harper and Cater-Vishnyakov models, including the recent extensions by Harrison-Bradley and Hofsäss predict that pattern formation on amorphous carbon thin films should be possible for low energy Ne ions from 250 eV up to 1500 eV. Moreover, simulations are able to explain the absence of pattern formation in certain cases. Our experimental results are compared with prediction using current linear theoretical models and applying the crater function formalism, as well as Monte Carlo simulations to calculate curvature coefficients using the SDTrimSP program. Calculations indicate that no patterns should be generated up to 45° incidence angle if the dynamic behavior of the thickness of the ion irradiated layer introduced by Hofsäss is taken into account, while pattern formation most pronounced from 50° for ion energy between 250 eV and 1500 eV, which are in good agreement with our experimental data.

Exciton Resonances in Novel Silicon Carbide Polymers

NASA Astrophysics Data System (ADS)

Burggraf, Larry; Duan, Xiaofeng

2015-05-01

A revolutionary technology transformation from electronics to excitionics for faster signal processing and computing will be advantaged by coherent exciton transfer at room temperature. The key feature required of exciton components for this technology is efficient and coherent transfer of long-lived excitons. We report theoretical investigations of optical properties of SiC materials having potential for high-temperature excitonics. Using Car-Parinello simulated annealing and DFT we identified low-energy SiC molecular structures. The closo-Si12C12 isomer, the most stable 12-12 isomer below 1100 C, has potential to make self-assembled chains and 2-D nanostructures to construct exciton components. Using TDDFT, we calculated the optical properties of the isomer as well as oligomers and 2-D crystal formed from the isomer as the monomer unit. This molecule has large optical oscillator strength in the visible. Its high-energy and low-energy transitions (1.15 eV and 2.56 eV) are nearly pure one-electron silicon-to-carbon transitions, while an intermediate energy transition (1.28 eV) is a nearly pure carbon-to-silicon one-electron charge transfer. These results are useful to describe resonant, coherent transfer of dark excitons in the nanostructures. Research supported by the Air Force Office of Scientific Research.

Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

NASA Astrophysics Data System (ADS)

Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

2014-08-01

The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

First-principles study of defects in TlBr

NASA Astrophysics Data System (ADS)

Du, Mao-Hua

2010-03-01

TlBr is a promising radiation detection material due to its high gamma-ray stopping efficiency, high resistivity (that reduces dark current and noise), large enough band gap of 2.68 eV (suitable for room temperature applications), and long electron carrier lifetime (for efficient collection of the radiation-generated carriers). The defect properties obtained from density functional calculations will be presented to discuss their roles in carrier trapping and recombination (which affects the carrier lifetime) and carrier compensation (which affects the resistivity).

Nitriding of Polymer by Low Energy Nitrogen Neutral Beam Source

NASA Astrophysics Data System (ADS)

Hara, Yasuhiro; Takeda, Keigo; Yamakawa, Koji; Den, Shoji; Toyoda, Hirotaka; Sekine, Makoto; Hori, Masaru

2012-03-01

Nitriding of polyethylene naphthalate (PEN) has been carried out at room temperature using a nitrogen neutral beam with kinetic energy of less than 100 eV. The surface hardness of nitrided samples increased to two times that of the untreated sample, when the acceleration voltage was between 30 and 50 V. The thickness of the hardened polymer layer was estimated to be 1 µm. It was concluded that the hardness enhancement was caused by the diffusion of nitrogen atoms into the polymer.

Exploration on anion ordering, optical properties and electronic structure in K3WO3F3 elpasolite

NASA Astrophysics Data System (ADS)

Atuchin, V. V.; Isaenko, L. I.; Kesler, V. G.; Lin, Z. S.; Molokeev, M. S.; Yelisseyev, A. P.; Zhurkov, S. A.

2012-03-01

Room-temperature modification of potassium oxyfluorotungstate, G2-K3WO3F3, has been prepared by low-temperature chemical route and single crystal growth. Wide optical transparency range of 0.3-9.4 μm and forbidden band gap Eg=4.32 eV have been obtained for G2-K3WO3F3 crystal. Meanwhile, its electronic structure has been calculated with the first-principles calculations. The good agreement between the theorectical and experimental results have been achieved. Furthermore, G2-K3WO3F3 is predicted to possess the relatively large nonlinear optical coefficients.

Auditoriums/Music Rooms.

ERIC Educational Resources Information Center

American School & University, 2002

2002-01-01

Describes the design of notable school auditoriums and music rooms, including the educational context and design goals. Includes information on architects, suppliers, and cost, as well as photographs. (EV)

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Structural phase transition causing anomalous photoluminescence behavior in perovskite (C6H11NH3)2[PbI4

NASA Astrophysics Data System (ADS)

Yangui, A.; Pillet, S.; Mlayah, A.; Lusson, A.; Bouchez, G.; Triki, S.; Abid, Y.; Boukheddaden, K.

2015-12-01

Optical and structural properties of the organic-inorganic hybrid perovskite-type (C6H11NH3)2[PbI4] (abbreviated as C6PbI4) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C6PbI4, revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ˜138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI6 octahedron. The resulting incommensurate spatial modulation of the Pb-I distances (and Pb-I-Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ˜130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with targeted properties.

Structural phase transition causing anomalous photoluminescence behavior in perovskite (C6H11NH3)2[PbI4].

PubMed

Yangui, A; Pillet, S; Mlayah, A; Lusson, A; Bouchez, G; Triki, S; Abid, Y; Boukheddaden, K

2015-12-14

Optical and structural properties of the organic-inorganic hybrid perovskite-type (C6H11NH3)2[PbI4] (abbreviated as C6PbI4) were investigated using optical absorption, photoluminescence (PL), and x-ray diffraction measurements. Room temperature, optical absorption measurements, performed on spin-coated films of C6PbI4, revealed two absorption bands at 2.44 and 3.21 eV. Upon 325 nm (3.815 eV) laser irradiation, strong green PL emission peaks were observed at 2.41 eV (P1) and 2.24 eV (P2) and assigned to free and localized excitons, respectively. The exciton binding energy was estimated at 356 meV. At low temperature, two additional emission bands were detected at 2.366 eV (P3) and a large band (LB) at 1.97 eV. The former appeared only below 40 K and the latter emerged below 130 K. The thermal dependence of the PL spectra revealed an abnormal behavior accompanied by singularities in the peak positions and intensities at 40 and 130 K. X-ray diffraction studies performed on powder and single crystals as a function of temperature evidenced significant changes of the interlayer spacing at 50 K and ∼138 K. Around 138 K, a commensurate to incommensurate structural phase transition occurred on cooling. It involves a symmetry breaking leading to a distortion of the PbI6 octahedron. The resulting incommensurate spatial modulation of the Pb-I distances (and Pb-I-Pb angles) causes a spatial modulation of the band gap, which is at the origin of the emergence of the LB below ∼130 K and the anomalous behavior of the position of P1 below 130 K. The change of the interlayer spacing in the 40-50 K range may in turn be related to the significant decrease of the intensity of P2 and the maximum emission of the LB. These results underline the intricate character of the structural and the PL properties of the hybrid perovskites; understanding such properties should benefit to the design of optoelectronic devices with targeted properties.

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport.

PubMed

Santana, Guillermo; de Melo, Osvaldo; Aguilar-Hernández, Jorge; Mendoza-Pérez, Rogelio; Monroy, B Marel; Escamilla-Esquivel, Adolfo; López-López, Máximo; de Moure, Francisco; Hernández, Luis A; Contreras-Puente, Gerardo

2013-03-15

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL) centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case.

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

PubMed Central

Santana, Guillermo; de Melo, Osvaldo; Aguilar-Hernández, Jorge; Mendoza-Pérez, Rogelio; Monroy, B. Marel; Escamilla-Esquivel, Adolfo; López-López, Máximo; de Moure, Francisco; Hernández, Luis A.; Contreras-Puente, Gerardo

2013-01-01

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL) centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case. PMID:28809356

Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

2011-09-01

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 C

NASA Technical Reports Server (NTRS)

Nieh, C. W.; Lin, T. L.

1989-01-01

This paper reports an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2, which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 C. The activation energy of the growth process is 0.8 + or - 0.1 eV.

Evaluation of single crystal LaB6 cathodes for use in a high frequency backward wave oscillator tube

NASA Technical Reports Server (NTRS)

Swanson, L. W.; Davis, P. R.; Schwind, G. A.

1984-01-01

The results of thermionic emission and evaporation studies of single crystal LaB6 cathodes are given. A comparison between the (100), (210) and (310) crystal planes shows the (310) and (210) planes to possess a work function approx 0.2 eV lower than (100). This translates into a significant increase in current density, J, at a specified temperature. Comparison with a state-of-the-art impregnated dispenser cathode shows that LaB6 (310) is a superior cathode in nearly all respects except operating temperature at j 10 A/sq cm. The 1600 K thermionic and room temperature retarding potential work functions for LaB6 (310) are 2.42 and 2.50 respectively.

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals.

PubMed

Ghosh, Ramesh; Giri, P K; Imakita, Kenji; Fujii, Minoru

2014-01-31

Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

NASA Technical Reports Server (NTRS)

Bujor, M.; Larson, L. A.; Poppa, H.

1982-01-01

The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE PAGES

Perl, Emmett E.; Simon, John; Friedman, Daniel J.; ...

2018-01-12

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Stabilities and defect-mediated lithium-ion conduction in a ground state cubic Li 3 N structure

DOE PAGES

Nguyen, Manh Cuong; Hoang, Khang; Wang, Cai-Zhuang; ...

2016-01-07

A stable ground state structure with cubic symmetry of Li 3N (c-Li 3N) is found by ab initio initially symmetric random-generated crystal structure search method. Gibbs free energy, calculated within quasi-harmonic approximation, shows that c-Li 3N is the ground state structure for a wide range of temperature. The c-Li 3N structure has a negative thermal expansion coefficient at temperatures lower than room temperature, due mainly to two transverse acoustic phonon modes. This c-Li 3N phase is a semiconductor with an indirect band gap of 1.90 eV within hybrid density functional calculation. We also investigate the migration and energetics of nativemore » point defects in c-Li 3N, including lithium and nitrogen vacancies, interstitials, and anti-site defects. Lithium interstitials are found to have a very low migration barrier (~0.12 eV) and the lowest formation energy among all possible defects. Thus, the ionic conduction in c-Li 3N is expected to occur via an interstitial mechanism, in contrast to that in the well-known α-Li 3N phase which occurs via a vacancy mechanism.« less

(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Friedman, Daniel J.

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure amore » power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.« less

Evolution of structural and optical properties of rutile TiO2 thin films synthesized at room temperature by chemical bath deposition method

NASA Astrophysics Data System (ADS)

Mayabadi, A. H.; Waman, V. S.; Kamble, M. M.; Ghosh, S. S.; Gabhale, B. B.; Rondiya, S. R.; Rokade, A. V.; Khadtare, S. S.; Sathe, V. G.; Pathan, H. M.; Gosavi, S. W.; Jadkar, S. R.

2014-02-01

Nanocrystalline thin films of TiO2 were prepared on glass substrates from an aqueous solution of TiCl3 and NH4OH at room temperature using the simple and cost-effective chemical bath deposition (CBD) method. The influence of deposition time on structural, morphological and optical properties was systematically investigated. TiO2 transition from a mixed anatase-rutile phase to a pure rutile phase was revealed by low-angle XRD and Raman spectroscopy. Rutile phase formation was confirmed by FTIR spectroscopy. Scanning electron micrographs revealed that the multigrain structure of as-deposited TiO2 thin films was completely converted into semi-spherical nanoparticles. Optical studies showed that rutile thin films had a high absorption coefficient and a direct bandgap. The optical bandgap decreased slightly (3.29-3.07 eV) with increasing deposition time. The ease of deposition of rutile thin films at low temperature is useful for the fabrication of extremely thin absorber (ETA) solar cells, dye-sensitized solar cells, and gas sensors.

Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

PubMed

Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

2018-02-28

In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films

NASA Astrophysics Data System (ADS)

Gao, Y. Q.; Huang, Z. M.; Hou, Y.; Wu, J.; Chu, J. H.

2013-12-01

Mn1.56Co0.96Ni0.48O4 (MCN) films with different layers have been prepared on Al2O3 substrate by chemical solution deposition method. The microstructures, optical and electrical properties of the films are investigated. X-ray diffraction and microstructure analyses show good crystallization and both the crystalline quality and the grain size are improved with the increasing thickness of the films. Mid-infrared optical properties of MCN films have been investigated using transmission spectra. The results show the red shift of absorption with the increasing film thickness and the energy gap Eg decrease from 0.6422 eV to 0.6354 eV. All the MCN films show an exponential decrease in the resistivity with increasing temperature within the measured range. The temperature dependence resistivity can be described by the small polarons hopping model. Using this model, the characteristic temperature T0 and activation energy E of the MCN films were derived. With the film thickness increase, the T0 and E of the MCN films increase. The calculated room temperature coefficient of resistance (TCR) of MCN film with 100 layers is -3.5% K-1. The MCN films showed appropriate resistance and high value of TCR, these advantages make them very preponderant for thermal sensors.

Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

NASA Astrophysics Data System (ADS)

Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

2017-11-01

The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

Growth and Characterization of the Evaporated Quaternary Absorber Cu2FeSnS4 for Solar Cell Applications

NASA Astrophysics Data System (ADS)

Oueslati, Hiba; Ben Rabeh, Mohamed; Kanzari, Mounir

2018-03-01

Cu2FeSnS4 (CFTS) was synthesized by direct fusion of high-purity elemental copper, iron, tin and sulfur. CFTS thin films were deposited on glass substrates heated by single source vacuum thermal evaporation, after which the obtained samples were annealed under a sulfur atmosphere in a sealed quartz tube at 400°C for 1 h in order to optimize the CFTS stannite phase. The substrate temperature was varied from room temperature to 200°C. The formation of a stannite structure with (112), (200) and (004) planes in the powder and thin films was confirmed using x-ray diffraction measurements and the crystallites were found to have a preferred orientation along the (112) direction. Optical measurements analysis showed that after the sulfurization process the layers have a relatively high absorption coefficient close to 105 cm-1 in the visible spectrum. The films show a direct optical band gap in the range 1.30-1.63 eV for substrate temperature varied from room temperature to 200°C. All samples revealed p-type conductivity as determined by the hot probe method.

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

NASA Astrophysics Data System (ADS)

Deshmukh, S. G.; Jariwala, Akshay; Agarwal, Anubha; Patel, Chetna; Panchal, A. K.; Kheraj, Vipul

2016-04-01

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grain size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm-1 and 1094 cm-1. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.

Scattering of positrons and electrons by alkali atoms

NASA Technical Reports Server (NTRS)

Stein, T. S.; Kauppila, W. E.; Kwan, C. K.; Lukaszew, R. A.; Parikh, S. P.; Wan, Y. J.; Zhou, S.; Dababneh, M. S.

1990-01-01

Absolute total scattering cross sections (Q sub T's) were measured for positrons and electrons colliding with sodium, potassium, and rubidium in the 1 to 102 eV range, using the same apparatus and experimental approach (a beam transmission technique) for both projectiles. The present results for positron-sodium and -rubidium collisions represent the first Q sub T measurements reported for these collision systems. Features which distinguish the present comparisons between positron- and electron-alkali atom Q sub T's from those for other atoms and molecules (room-temperature gases) which have been used as targets for positrons and electrons are the proximity of the corresponding positron- and electron-alkali atom Q sub T's over the entire energy range of overlap, with an indication of a merging or near-merging of the corresponding positron and electron Q sub T's near (and above) the relatively low energy of about 40 eV, and a general tendency for the positron-alkali atom Q sub T's to be higher than the corresponding electron values as the projectile energy is decreased below about 40 eV.

Current-Driven Hydrogen Desorption from Graphene: Experiment and Theory.

PubMed

Gao, Li; Pal, Partha Pratim; Seideman, Tamar; Guisinger, Nathan P; Guest, Jeffrey R

2016-02-04

Electron-stimulated desorption of hydrogen from the graphene/SiC(0001) surface at room temperature was investigated with ultrahigh vacuum scanning tunneling microscopy and ab initio calculations in order to elucidate the desorption mechanisms and pathways. Two different desorption processes were observed. In the high electron energy regime (4-8 eV), the desorption yield is independent of both voltage and current, which is attributed to the direct electronic excitation of the C-H bond. In the low electron energy regime (2-4 eV), however, the desorption yield exhibits a threshold dependence on voltage, which is explained by the vibrational excitation of the C-H bond via transient ionization induced by inelastic tunneling electrons. The observed current independence of the desorption yield suggests that the vibrational excitation is a single-electron process. We also observed that the curvature of graphene dramatically affects hydrogen desorption. Desorption from concave regions was measured to be much more probable than desorption from convex regions in the low electron energy regime (∼2 eV), as would be expected from the identified desorption mechanism.

Current-Driven Hydrogen Desorption from Graphene: Experiment and Theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, L.; Pal, Partha P.; Seideman, Tamar

2016-02-04

Electron-stimulated desorption of hydrogen from the graphene/SiC(0001) surface at room temperature was investigated with ultrahigh vacuum scanning tunneling microscopy and ab initio calculations in order to elucidate the desorption mechanisms and pathways. Two different desorption processes were observed. In the high electron energy regime (4-8 eV), the desorption yield is independent of both voltage and current, which is attributed to the direct electronic excitation of the C-H bond. In the low electron energy regime (2-4 eV), however, the desorption yield exhibits a threshold dependence on voltage, which is explained by the vibrational excitation of the C-H bond via transient ionizationmore » induced by inelastic tunneling electrons. The observed current-independence of the desorption yield suggests that the vibrational excitation is a singleelectron process. We also observed that the curvature of graphene dramatically affects hydrogen desorption. Desorption from concave regions was measured to be much more probable than desorption from convex regions in the low electron energy regime (~ 2 eV), as would be expected from the identified desorption mechanism« less

Observation of infrared absorption of InAs quantum dot structures in AlGaAs matrix toward high-efficiency solar cells

NASA Astrophysics Data System (ADS)

Yoshikawa, Hirofumi; Watanabe, Katsuyuki; Kotani, Teruhisa; Izumi, Makoto; Iwamoto, Satoshi; Arakawa, Yasuhiko

2018-06-01

In accordance with the detailed balance limit model of single-intermediate-band solar cells (IBSCs), the optimum matrix bandgap and IB–conduction band (CB) energy gap are ∼1.9 and 0.7 eV, respectively. We present the room-temperature polarized infrared absorption of 20 stacked InAs quantum dot (QD) structures in the Al0.32Ga0.68As matrix with a bandgap of ∼1.9 eV for the design of high-efficiency IBSCs by using a multipass waveguide geometry. We find that the IB–CB absorption is almost independent of the light polarization, and estimate the magnitude of the absorption per QD layer to be ∼0.01%. We also find that the IB–CB absorption edge of QD structures with a wide-gap matrix is ∼0.41 eV. These results indicate that both the significant increase in the magnitude of IB–CB absorption and the lower energy of the IB state for the higher IB–CB energy gap are necessary toward the realization of high-efficiency IBSCs.

Synthesis and characterization of structural, morphological and photosensor properties of Cu0.1Zn0.9S thin film prepared by a facile chemical method

NASA Astrophysics Data System (ADS)

Gubari, Ghamdan M. M.; Ibrahim Mohammed S., M.; Huse, Nanasaheb P.; Dive, Avinash S.; Sharma, Ramphal

2018-05-01

The Cu0.1Zn0.9S thin film was grown by facile chemical bath deposition (CBD) method on glass substrates at 60°C. The structural, morphological, photosensor properties of the as-grown thin film has been investigated. The structural and phase confirmation of the as-grown thin film was carried out by X-ray diffraction (XRD) technique and Raman spectroscopy. The FE-SEM images showed that the thin films are well covered with material on an entire glass substrate. From the optical absorption spectrum, the direct band gap energy for the Cu0.1Zn0.9S thin film was found to be ˜3.16 eV at room temperature. The electrical properties were measured at room temperature in the voltage range ±2.5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ˜72 % for 260 W.

Collisions of slow ions C3Hn+ and C3Dn+ (n = 2-8) with room temperature carbon surfaces: mass spectra of product ions and the ion survival probability.

PubMed

Pysanenko, Andriy; Zabka, Jan; Feketeová, Linda; Märk, Tilmann D; Herman, Zdenek

2008-01-01

Collisions of C3Hn+ (n = 2-8) ions and some of their per- deuterated analogs with room temperature carbon (HOPG) surfaces (hydrocarbon-covered) were investigated over the incident energy range 13-45 eV in beam scattering experiments. The mass spectra of product ions were measured and main fragmentation paths of the incident projectile ions, energized in the surface collision, were determined. The extent of fragmentation increased with increasing incident energy. Mass spectra of even-electron ions C3H7+ and C3H5+ showed only fragmentations, mass spectra of radical cations C3H8*+ and C3H6*+ showed both simple fragmentations of the projectile ion and formation of products of its surface chemical reaction (H-atom transfer between the projectile ion and hydrocarbons on the surface). No carbon-chain build-up reaction (formation of C4 hydrocarbons) was detected. The survival probability of the incident ions, S(a), was usually found to be about 1-2% for the radical cation projectile ions C3H8*+, C3H6*+, C3H4*+ and C3H2*+ and several percent up to about 20% for the even-electron projectile ions C3H7+, C3H5+, C3H3+. A plot of S(a) values of C1, C2, C3, some C7 hydrocarbon ions, Ar+ and CO2+ on hydrocarbon-covered carbon surfaces as a function of the ionization energies (IE) of the projectile species showed a drop from about 10% to about 1% and less at IE 8.5-9.5 eV and further decrease with increasing IE. A strong correlation was found between log S(a) and IE, a linear decrease over the entire range of IE investigated (7-16 eV), described by log S(a) = (3.9 +/- 0.5)-(0.39 +/- 0.04) IE.

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Baranov, Artem I.; Gudovskikh, Alexander S.; Kudryashov, Dmitry A.; Lazarenko, Alexandra A.; Morozov, Ivan A.; Mozharov, Alexey M.; Nikitina, Ekaterina V.; Pirogov, Evgeny V.; Sobolev, Maxim S.; Zelentsov, Kirill S.; Egorov, Anton Yu.; Darga, Arouna; Le Gall, Sylvain; Kleider, Jean-Paul

2018-04-01

The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7-12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm-3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm-3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm-3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3-5) × 1015 cm-3, while the concentration of deep levels becomes 1.3 × 1015 cm-3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.

Grain boundary-dominated electrical conduction and anomalous optical-phonon behaviour near the Neel temperature in YFeO3 ceramics

NASA Astrophysics Data System (ADS)

Raut, Subhajit; Babu, P. D.; Sharma, R. K.; Pattanayak, Ranjit; Panigrahi, Simanchalo

2018-05-01

We investigated the anomalous behaviour in the dielectric properties, occurring nearly at room temperature and at elevated temperatures (near the Neel temperature TN) of the polycrystalline samples of YFeO3 (YFO) ceramics. On the prepared YFO ceramics, the magnetic measurements showed the Neel temperature of YFO to be 650 K, below which the compound exhibited the weak ferromagnetic behaviour. X-ray photoelectron spectroscopy (XPS) shows the presence of Fe ions (Fe2+ and Fe3+ states) and also revealed the formation of the oxygen vacancies. The frequency dependence of the complex dielectric constant within the frequency domain of 100 Hz-1 MHz shows the presence of grain dominated dielectric relaxation over the thermal window of 300-373 K. The activation energy Eact.ɛ=0.611 eV extracted from the imaginary permittivity spectrum indicates the involvement of oxygen vacancies in the relaxation process. Above 493 K, the ac conductivity, complex impedance, and modulus studies revealed appreciable conduction and relaxation processes occurring in YFO ceramics with respective activation energies Eac t . σ=1.362 eV and Eac t . Z=1.345 eV , which suggests that the oxygen vacancies are also involved for the anomalous behaviour of the dielectric constant at elevated temperatures. The temperature dependent Raman spectroscopic measurements within the thermal window of 298-698 K showed anomalous variations of the line widths and frequencies of several Raman active modes above 473 K up to the vicinity of TN pointing towards the presence of admixtures of the electron-phonon and spin-phonon coupling in the system. A further study on the thermal variation of the B2g(4) mode frequency with [M(T)/MS]2 shows the occurrence of strong spin-phonon (s-p) coupling, while the line shape shows the presence of the Fano asymmetry, suggesting spin dependent electron-phonon (e-p) coupling in the system below TN.

Origin of colossal dielectric permittivity of rutile Ti 0.9In 0.05Nb 0.05O 2: single crystal and polycrystalline

DOE PAGES

Song, Yongli; Wang, Xianjie; Sui, Yu; ...

2016-02-12

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, andmore » that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.« less

Efficient Green Emission from Wurtzite Al xIn1- xP Nanowires.

PubMed

Gagliano, L; Kruijsse, M; Schefold, J D D; Belabbes, A; Verheijen, M A; Meuret, S; Koelling, S; Polman, A; Bechstedt, F; Haverkort, J E M; Bakkers, E P A M

2018-06-13

Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al x In 1- x P nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite Al x In 1- x P using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

Dielectric, Impedance and Conduction Behavior of Double Perovskite Pr2CuTiO6 Ceramics

NASA Astrophysics Data System (ADS)

Mahato, Dev K.; Sinha, T. P.

2017-01-01

Polycrystalline Pr2CuTiO6 (PCT) ceramics exhibits dielectric, impedance and modulus characteristics as a possible material for microelectronic devices. PCT was synthesized through the standard solid-state reaction method. The dielectric permittivity, impedance and electric modulus of PCT have been studied in a wide frequency (100 Hz-1 MHz) and temperature (303-593 K) range. Structural analysis of the compound revealed a monoclinic phase at room temperature. Complex impedance Cole-Cole plots are used to interpret the relaxation mechanism, and grain boundary contributions towards conductivity have been estimated. From electrical modulus formalism polarization and conductivity relaxation behavior in PCT have been discussed. Normalization of the imaginary part of impedance ( Z″) and the normalized imaginary part of modulus ( M″) indicates contributions from both long-range and localized relaxation effects. The grain boundary resistance along with their relaxation frequencies are plotted in the form of an Arrhenius plot with activation energy 0.45 eV and 0.46 eV, respectively. The ac conductivity mechanism has been discussed.

Electron and phonon transport in Co-doped FeV0.6Nb0.4Sb half-Heusler thermoelectric materials

NASA Astrophysics Data System (ADS)

Fu, Chenguang; Liu, Yintu; Xie, Hanhui; Liu, Xiaohua; Zhao, Xinbing; Jeffrey Snyder, G.; Xie, Jian; Zhu, Tiejun

2013-10-01

The electron and phonon transport characteristics of n-type Fe1-xCoxV0.6Nb0.4Sb half-Heusler thermoelectric compounds is analyzed. The acoustic phonon scattering is dominant in the carrier transport. The deformation potential of Edef = 14.1 eV and the density of state effective mass m* ≈ 2.0 me are derived under a single parabolic band assumption. The band gap is calculated to be ˜0.3 eV. Electron and phonon mean free paths are estimated based on the low and high temperature measurements. The electron mean free path is higher than the phonon one above room temperature, which is consistent with the experimental result that the electron mobility decreases more than the lattice thermal conductivity by grain refinement to enhance boundary scattering. A maximum ZT value of ˜0.33 is obtained at 650 K for x = 0.015, an increase by ˜60% compared with FeVSb. The optimal doping level is found to be ˜3.0 × 1020 cm-3 at 600 K.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

Synthesis, purification and bulk crystal growth of radiation detector materials using melt growth technique

NASA Astrophysics Data System (ADS)

Surabhi, Raja Rahul Reddy

In the past decade, there has been new and increased usage of radiation-detection technologies for applications in homeland security, non-proliferation, and national defense. Most of these applications require a portable device with high gamma-ray energy resolution and detection efficiency, compact size, room-temperature operation, and low cost. Consequently, there is a renewed understanding of the material limitations for these technologies and a great demand to develop next-generation radiation-detection materials that can operate at room temperature. Mercuric iodide (HgI2), Lead iodide (PbI2), and CdZnTe (CZT) are the current leading candidates for radiation detector applications. This is because of their high atomic number and large band gap that makes them particularly well suited for fabrication of high resolution and high efficiency compact devices. PbI2 is a promising material for room temperature nuclear radiation detectors, characterized by its wide band gap (EG=2.32eV) and high-density (rho=6.2g/cm3). It has been reported that PbI2 crystal detectors are able to detect gamma-ray in the range of 1KeV-1MeV, with good energy resolution. However, PbI 2 detectors have not been studied in detail because of non-availability of high quality single crystals. This study presents the synthesis, purification, growth and characterization of PbI2 single crystals grown. In this research, solid-state synthesis technique has been utilized for obtaining PbI2 as a starting material. For the first time, a unique low-temperature purification technique has been developed to obtain high-purity starting material. The crystals were grown using 2-zone Bridgman-Stockbarger (B.S) technique wherein growth rate and temperature gradient at the solid-liquid interface were optimized. Single crystals of PbI2 were successfully grown in quartz glass ampoule under different growth conditions. Material purity was determined by measuring the elemental concentration using the Inductively coupled plasma-optical emission spectroscopy (ICP-OES). ICP-OES is utilized for estimating impurities present in the low-temperature purified material, zone refined material and melt grown PbI2 crystals. The zone-refined material contains no traceable amounts of impurities, whereas the low-temperature purified material and melt grown PbI2 crystals show very low concentration of K (potassium) and Na (sodium) impurities. Crystal characterization has been performed for determining optical properties by UV-VIS spectroscopy. The energy band gap (EG) is an important parameter for materials used for room temperature gamma-ray detector applications. The absorption peak at 530nm is a characteristic of PbI2 and corresponds to the onset of the transitions from the valence band to the exciton level. From this absorption spectrum the calculated indirect band gap of PbI 2 was 2.33+/-0.025 eV at room temperature. For measuring the electrical properties (Dielectric and I-V characteristics) of the crystal, Ag (silver) contacts are applied to both sides of the sample. Dielectric analysis on melt grown PbI2 showed that space charge polarization was dominant at lower frequencies but stabilizes at higher frequencies over different operating temperatures. On the other hand, dielectric analysis for zone-refined material space charge polarization was constant over the operating range resulting in fewer lattice defects. Therefore the low temperature purified material followed by zone-refined purification provides detector grade material with fewer lattice defects. The measured electrical resistivity for melt grown PbI2 and zone-refined material are 3.185 x 10 10 O-cm and 0.754 x 109 O-cm at room temperature along (001) plane respectively.

Synthesis of Hierarchical Self-Assembled CuO and Their Structure-Enhanced Photocatalytic Performance

NASA Astrophysics Data System (ADS)

Wang, Dagui; Yan, Bing; Song, Caixiong; Ye, Ting; Wang, Yongqian

2018-01-01

Hierarchical self-assembled CuO hollow microspheres with superior photocatalytic performance are synthesized via a simple hydrothermal process in the presence of cationic surfactants (cetyltrimethylammonium bromide, CTAB). The structure, morphology, and optical absorption performance of CuO samples prepared with different surfactants including CTAB, nonionic surfactant (polyvinylpyrrolidone, PVP) and anionic surfactant (sodium dodecyl sulfate, SDS) are characterized by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible (UV-vis) absorption spectra. Moreover, the photocatalytic performances of the CuO samples are evaluated by the photo-degradation of a simulative contaminant methylene blue. The XRD patterns and FESEM images demonstrate that the category of surfactants have effects on the phase structure and morphology of CuO. Compared with bulk CuO (1.20 eV at room temperature), the band gap of CuO microspheres prepared with different surfactants including CTAB, PVP and SDS are measured at 2.16 eV, 2.29 eV, 2.44 eV, respectively, which exhibits a blue shift in the UV-vis spectra. The synthesized hierarchical self-assembled CuO hollow microspheres reveal commendable photocatalytic activity, in which the photo-degradation rate could rise to 94.1%. Additionally, a reasonable growth mechanism of CuO microspheres synthesized with different surfactants is discussed in detail.

The acceptors behavior in the Single and Double Doped Bi12TiO20

NASA Astrophysics Data System (ADS)

Petkova, P.; Vasilev, P.; Gul, Gulsah Celik; Mustafa, M.; Parushev, I.

2018-03-01

The absorption coefficient of Bi12TiO20:AlI, Bi12TiO20:AlII, Bi12SiO20:P and Bi12SiO20:Al+P single crystals is measured in the spectral region of Urbach's rule (1.52 - 2.92 eV) at room temperature. The parameters of electron-phonon interaction, Urbach's energy and the constants of Urbach's rule are calculated. The behavior of the acceptors Al3+ and P5+ in Urbach's rule region has been considered.

Controlled growth-reversal of catalytic carbon nanotubes under electron-beam irradiation.

PubMed

Stolojan, Vlad; Tison, Yann; Chen, Guan Yow; Silva, Ravi

2006-09-01

The growth of carbon nanotubes from Ni catalysts is reversed and observed in real time in a transmission electron microscope, at room temperature. The Ni catalyst is found to be Ni3C and remains attached to the nanotube throughout the irradiation sequence, indicating that C most likely diffuses on the surface of the catalyst to form nanotubes. We calculate the energy barrier for saturating the Ni3C (2-13) surface with C to be 0.14 eV, thus providing a low-energy surface for the formation of graphene planes.

Ferromagnetic germanide in Ge nanowire transistors for spintronics application.

PubMed

Tang, Jianshi; Wang, Chiu-Yen; Hung, Min-Hsiu; Jiang, Xiaowei; Chang, Li-Te; He, Liang; Liu, Pei-Hsuan; Yang, Hong-Jie; Tuan, Hsing-Yu; Chen, Lih-Juann; Wang, Kang L

2012-06-26

To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire transistors, in which the room-temperature ferromagnetic germanide was found through the solid-state reaction between a single-crystalline Ge nanowire and Mn contact pads upon thermal annealing. The atomically clean interface between Mn(5)Ge(3) and Ge with a relatively small lattice mismatch of 10.6% indicates that Mn(5)Ge(3) is a high-quality ferromagnetic contact to Ge. Temperature-dependent I-V measurements on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire heterostructure reveal a Schottky barrier height of 0.25 eV for the Mn(5)Ge(3) contact to p-type Ge. The Ge nanowire field-effect transistors built on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) heterostructure exhibit a high-performance p-type behavior with a current on/off ratio close to 10(5), and a hole mobility of 150-200 cm(2)/(V s). Temperature-dependent resistance of a fully germanided Mn(5)Ge(3) nanowire shows a clear transition behavior near the Curie temperature of Mn(5)Ge(3) at about 300 K. Our findings of the high-quality room-temperature ferromagnetic Mn(5)Ge(3) contact represent a promising step toward electrical spin injection into Ge nanowires and thus the realization of high-efficiency spintronic devices for room-temperature applications.

Superparamagnetic behavior in Sn0.95Mg0.05O2 nanoparticles

NASA Astrophysics Data System (ADS)

Ahmed, Ateeq; Siddique, M. Naseem; Ali, Tinku; Tripathi, P.

2018-04-01

We have studied structural, optical and magnetic properties of Sn0.95Mg0.05O2 nanoparticles synthesized by sol-gel process. Single phase tetragonal structure of Mg doped SnO2 nanoparticles (NPs) have been inferred by X-ray diffraction, which involves Rietveld refinement analysis and average crystallite size is found to be 20.4 nm. Energy dispersive X -ray analysis confirmed the presence of Mg into host SnO2 lattice. The energy band gap is found to be wider (Eg = 3.73 eV) compared to the bulk (3.6 eV) which is due to the quantum confinement effect. The observed defects due to oxygen vacancies are studied by the photoluminescence study. The SQUID magnetometer measurements shows superparamagnetic behavior of Mg-doped SnO2 NPs at room temperature and they are single domain NPs. Our results suggest that it is possible to control the superparamagnetic properties through chemical composition.

Study of behaviors of aluminum overlayers deposited on uranium via AES, EELS, and XPS

NASA Astrophysics Data System (ADS)

Liu, Kezhao; Luo, Lizhu; Zhou, Wei; Yang, Jiangrong; Xiao, Hong; Hong, Zhanglian; Yang, Hui

2013-04-01

Aluminum overlayers on uranium were prepared by sputtering at room temperature in an ultra-high vacuum chamber. The growth mode of aluminum overlayers and behaviors of the Al/U interface reaction were studied in situ by auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. The results suggested that the interdiffusion took place at the Al/U interface during the initial stage of deposition. The U4f spectra of the Al/U interface showed strong correlation satellites at binding energies of 380.4 and 392.7 eV and plasma loss features at 404.2 eV, respectively. The interactions between aluminum and uranium yielded the intermetallic compound of UAlx, inducing the shift to a low binding energy for Al2p peaks. The results indicated that aluminum overlayers were formed on the uranium by sputtering in an island growth mode.

Probing reaction pathways for oxidation of CO by O2 molecule over P-doped divacancy graphene: A DFT study

NASA Astrophysics Data System (ADS)

Esrafili, Mehdi D.; Mousavian, Parisasadat

2018-05-01

Using the dispersion-corrected density functional theory calculations, the catalytic performance of P-doped graphene with divacancy (P-GDV) is examined for the oxidation of CO by O2 molecule. According to our results, the first step of CO oxidation (CO + O2 → CO2 + O∗) proceeds via Langmuir-Hinshelwood mechanism with a small activation energy (0.28 eV). The remaining O atom (O∗) is then eliminated by another incoming CO molecule with an energy barrier of 0.59 eV. It is found that the orbital hybridization between the O2-2π and CO-2π∗ states in the coadsorbed structure plays an important role for the first step of the CO oxidation. Our result indicates that the low-cost P-GDV can be regarded as an active metal-free catalyst for CO oxidation at room temperature.

Controlled, Stepwise Reduction and Band Gap Manipulation of Graphene Oxide.

PubMed

Mathkar, Akshay; Tozier, Dylan; Cox, Paris; Ong, Peijie; Galande, Charudatta; Balakrishnan, Kaushik; Leela Mohana Reddy, Arava; Ajayan, Pulickel M

2012-04-19

Graphene oxide (GO) has drawn tremendous interest as a tunable precursor in numerous areas, due to its readily manipulable surface. However, its inhomogeneous and nonstoichiometric structure makes achieving chemical control a major challenge. Here, we present a room-temperature based, controlled method for the stepwise reduction of GO, with evidence of sequential removal of each organic moiety. By analyzing signature infrared absorption frequencies, we identify the carbonyl group as the first to be reduced, while the tertiary alcohol takes the longest to be completely removed from the GO surface. Controlled reduction allows for progressive tuning of the optical gap from 3.5 eV down to 1 eV, while XPS spectra show a concurrent increase in the C/O ratio. This study is the first step toward selectively enhancing the chemical homogeneity of GO, thus providing greater control over its structure, and elucidating the order of removal of functional groups and hydrazine-vapor reduction.

Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

NASA Astrophysics Data System (ADS)

Galkin, N. G.; Galkin, K. N.; Dotsenko, , S. A.; Goroshko, D. L.; Shevlyagin, A. V.; Chusovitin, E. A.; Chernev, I. M.

2017-01-01

By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

Synthesis and characterization of substituted garnet and perovskite-based lithium-ion conducting solid electrolytes

DOE PAGES

Abreu-Sepúlveda, Maria; Huq, Ashfia; Dhital, Chetan; ...

2015-09-30

In this study, titanium, tantalum-substituted Li 7La 3Z r2-xA xO 12 (LLZO, A = Ta, Ti) garnets, and chromium-substituted La (2/3)-xLi 3xTi 1-yCr yO 3 (LLTO) perovskites were prepared by a conventional solid-state reaction and the Pechini processes. The desired crystal phases were obtained by varying the calcination temperature and time, as well as the substitution concentration. All samples indicated decomposition of the precursors when heated above 750 °C and formation of the desired phase after heat treatment at higher temperatures. Neutron diffraction data shows the formation of a predominant cubic phase in the case of Ta-LLZO, and monoclinic phasemore » with minor impurity phases for Cr-LLTO. Ionic conductivity for Ti-LLZO (Li 7La 3Zr 1.4Ti 0.6O 12), Ta-LLZO (Li 6.03La 3Zr 1.533Ta 0.46O 12), and Cr-LLTO (La (2/3)-xLi 3xTi 0.9Cr 0.1O 3) at room temperature were found to be 5.21 × 10 –6, 1.01 ×10 –6, and 1.2 × 10 –4 S cm –1, respectively. The activation energies of the compounds were determined from the Arrhenius plot and were 0.44 eV (Ti 0.6-LLZO), 0.54 eV (Ta 0.5-LLZO), and 0.20 eV (Cr 0.1-LLTO).« less

CeHIO6·4H2O: A novel, highly efficient catalyst for degrading organic dyes without light illumination at room temperature

NASA Astrophysics Data System (ADS)

Ma, Xinping; Li, Jiayin; Liu, Haoran; Tang, Jianting

2018-07-01

It is still desirable to obtain the catalysts to degrade organic dye pollutants at room temperature, which meets the current demands of pollutant-removing and energy-saving simultaneously. By a facile precipitation method, we prepared in this work a new, highly efficient CeHIO6·4H2O catalyst. By characterization, it was found that the CeHIO6·4H2O sample is in nature a yellow inorganic semiconductor with particle size of 0.2-10 μm, band gap of 2.75 eV, low surface area of 1.52 m2 g-1 and amorphous structure. The CeHIO6·4H2O catalyst showed high activity in degradation of rhodamine B (RhB), methyl orange (MO) and methylene blue (MB) in the dark at room temperature. After being used for 3 cycles, it did not undergo significant loss of activity and kept its chemical composition unchanged in the degradation experiments. More importantly, its activity is remarkably higher than that of the previously reported Ce(IO3)4, CeGeO4, ZrHIO6·4H2O and Ce-doped MoO3 analogues. The major active species and the catalytic mechanism for the dye degradation were proposed.

Enhanced room temperature ferromagnetism in Cr-doped ZnO nanoparticles prepared by auto-combustion method

NASA Astrophysics Data System (ADS)

Haq, Khizar-ul; Irfan, M.; Masood, Muhammad; Saleem, Murtaza; Iqbal, Tahir; Ahmad, Ishaq; Khan, M. A.; Zaffar, M.; Irfan, Muhammad

2018-04-01

Zn1‑x Cr x O (x = 0.00, 0.01, 0.03, 0.05, 0.07, and 0.09) nanoparticles were synthesized, by an auto-combustion method. Structural, optical, and magnetic characteristics of Cr-doped ZnO samples calcined at 600 °C have been analyzed by using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), UV–Vis spectroscopy and vibrating sample magnetometer (VSM). The XRD data confirmed the hexagonal wurtzite structure of pure and Cr-doped ZnO nanoparticles. The calculated values of grain size using Scherrer's formula are in the range of 30.7–9.2 nm. The morphology of nanopowders has been observed by FESEM, and EDS results confirmed a systematic increase of Cr content in the samples and clearly indicate with no impurity element. The band gaps, computed by UV–Vis spectroscopy, are in the range of 2.83–2.35 eV for different doping concentrations. By analyzing VSM data, significantly enhanced room temperature ferromagnetism is identified in Cr-doped ZnO samples. The value of magnetization is a 12 times increased of the value reported by Daunet al. (2010). Room temperature ferromagnetism of the nanoparticles is of vital prominence for spintronics applications. Project supported by the Office of Research, Innovation, and Commercialization (ORIC), MUST Mirpur (AJK).

P-Type Transparent Cu-Alloyed ZnS Deposited at Room Temperature

DOE PAGES

Woods-Robinson, Rachel; Cooper, Jason K.; Xu, Xiaojie; ...

2016-03-16

All transparent conducting materials (TCMs) of technological practicality are n-type; the inferior conductivity of p-type TCMs has limited their adoption. Additionally, many relatively high-performing p-type TCMs require synthesis temperatures > 400 °C. Here, room-temperature pulsed laser deposition of copper-alloyed zinc sulfide (Cu x Zn 1- x S) thin films (0 ≤ x ≤ 0.75) is reported. For 0.09 ≤ x ≤ 0.35, Cu x Zn 1- x S has high p-type conductivity, up to 42 S cm -1 at x = 0.30, with an optical band gap tunable from ≈3.0–3.3 eV and transparency, averaged over the visible, of 50%–71% formore » 200–250 nm thick films. In this range, synchrotron X-ray and electron diffraction reveal a nanocrystalline ZnS structure. Secondary crystalline Cu y S phases are not observed, and at higher Cu concentrations, x > 0.45, films are amorphous and poorly conducting. Furthermore, within the TCM regime, the conductivity is temperature independent, indicating degenerate hole conduction. A decrease in lattice parameter with Cu content suggests that the hole conduction is due to substitutional incorporation of Cu onto Zn sites. This hole-conducting phase is embedded in a less conducting amorphous Cu y S, which dominates at higher Cu concentrations. Finally, the combination of high hole conductivity and optical transparency for the peak conductivity Cu x Zn 1- x S films is among the best reported to date for a room temperature deposited p-type TCM.« less

Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+}: A novel blue emitting phosphor for white LEDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Panlai, E-mail: li_panlai@126.com; Wang, Zhijun, E-mail: wangzj1998@126.com; Yang, Zhiping

2014-12-15

Graphical abstract: Under the 350 nm radiation excitation, Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} has a broad blue emission band. When the temperature turned up to 150 °C, the emission intensity of Ba{sub 1.97}B{sub 2}O{sub 5}:0.03Ce{sup 3+} is 63.4% of the initial value at room temperature. The activation energy ΔE is calculated to be 0.25 eV, which prove the good thermal stability of Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+}. All the properties indicate that Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} may have potential application in white LEDs. - Highlights: • Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} has a broad blue emission band under themore » 350 nm radiation excitation. • Emission intensity of Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} is 63.4% (150 °C) of the initial value (30 °C). • The activation energy ΔE for thermal quenching is 0.25 eV. - Abstract: A novel blue emitting phosphor Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} is synthesized by a high temperature solid state method. The luminescent property and the thermal stability of Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} are investigated. Under the 350 nm radiation excitation, Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} has a broad blue emission band, and the peak locates at 417 nm which is assigned to the 5d{sup 1}–4f{sup 1} transition of Ce{sup 3+}. It is further proved that the dipole–dipole interaction results in the concentration quenching of Ce{sup 3+} in Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+}. When the temperature turned up to 150 °C, the emission intensity of Ba{sub 1.97}B{sub 2}O{sub 5}:0.03Ce{sup 3+} is 63.4% of the initial value at room temperature. The activation energy ΔE is calculated to be 0.25 eV, which prove the good thermal stability of Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+}. All the properties indicate that Ba{sub 2}B{sub 2}O{sub 5}:Ce{sup 3+} may have potential application in white LEDs.« less

Adsorption study of copper phthalocyanine on Si(111)(√3 × √3)R30°Ag surface

NASA Astrophysics Data System (ADS)

Menzli, S.; Ben Hamada, B.; Arbi, I.; Souissi, A.; Laribi, A.; Akremi, A.; Chefi, C.

2016-04-01

The adsorption of copper phthalocyanine (CuPc) molecules on Si(111)(√3 × √3)R30°Ag surface is studied at room temperature under ultra high vacuum. Crystallographic, chemical and electronic properties of the interface are investigated by low energy electron diffraction (LEED), ultraviolet and X-ray photoemission spectroscopies (UPS, XPS) and X-ray photoemission diffraction (XPD). LEED and XPD results indicate that after one monolayer deposition the molecular layer is highly ordered with a flat lying adsorption configuration. The corresponding pattern reveals the coexistence of three symmetrically equivalent orientations of molecules with respect to the substrate. XPS core level spectra of the substrate reveal that there is no discernible chemical interaction between molecules and substrate; however there is evidence of Fermi level movement. During the growth, the work function was found to decrease from 4.90 eV for the clean substrate to 4.35 eV for the highest coverage (60 monolayers). Within a thickness of two monolayer deposition an interface dipole of 0.35 eV and a band bending of 0.2 eV have been found. UPS spectra indicate the existence of a band bending of the highest occupied molecular orbital (HOMO) of 0.55 eV. The changes in the work function, in the Fermi level position and in the HOMO state have been used to determine the energy level alignment at the interface.

DFT computations on: Crystal structure, vibrational studies and optical investigations of a luminescent self-assembled material

NASA Astrophysics Data System (ADS)

Kessentini, A.; Ben Ahmed, A.; Dammak, T.; Belhouchet, M.

2018-02-01

The current work undertakes the growth and the physicochemical properties of a novel green-yellow luminescence semi-organic material, the 3-picolylammonium bromide abbreviated (Pico-Br). In this paper, we report the X-ray diffraction measurements which show that the crystal lattice consists of distinct 3-picolylammonium cations and free bromide anions connected via Nsbnd H ⋯ Br and Nsbnd H ⋯ N hydrogen bonds leading to form a two dimensional frameworks. Molecular geometry compared with its optimized counterpart shows that the quantum chemical calculations carried out with density functional method (DFT) well produce the perceived structure by X-ray resolution of the studied material. To provide further insight into the spectroscopic properties, additional characterization of this material have been performed with Raman and infrared studies at room temperature. Theoretical computations have been computed using the (DFT) method at B3LYP/LanL2DZ level of theory implemented within Gaussian 03 program to study the vibrational spectra of the investigated molecule in the ground state. Optical absorption spectrum inspected by UV-visible absorption reveals the appearance of sharp optical gap of 280 nm (4.42 eV) as well as a strong green photoluminescence emission at 550 nm (2.25 eV) is detected on the photoluminescence (PL) spectrum at room temperature. Using the TD/DFT method, HOMO-LUMO energy gap and the Mulliken atomic charges were calculated in order to get an insight into the material. Good agreement between the theoretical results and the experimental ones was predicted.

Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2.

PubMed

Poudel, P R; Paramo, J A; Poudel, P P; Diercks, D R; Strzhemechny, Y M; Rout, B; McDaniel, F D

2012-03-01

Amorphous carbon (a-C) nanoclusters were synthesized by the implantation of carbon ions (C-) into thermally grown silicon dioxide film (-500 nm thick) on a Si (100) wafer and processed by high temperature thermal annealing. The carbon ions were implanted with an energy of 70 keV at a fluence of 5 x 10(17) atoms/cm2. The implanted samples were annealed at 1100 degrees C for different time periods in a gas mixture of 96% Ar+4% H2. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and High Resolution Transmission Electron Microscopy (HRTEM) were used to study the structural properties of both the as-implanted and annealed samples. HRTEM reveals the formation of nanostructures in the annealed samples. The Raman spectroscopy also confirms the formation of carbon nano-clusters in the samples annealed for 10 min, 30 min, 60 min and 90 min. No Raman features originating from the carbon-clusters are observed for the sample annealed further to 120 min, indicating a complete loss of implanted carbon from the SiO2 layer. The loss of the implanted carbon in the 120 min annealed sample from the SiO2 layer was also observed in the XPS depth profile measurements. Room temperature photoluminescence (PL) spectroscopy revealed visible emissions from the samples pointing to carbon ion induced defects as the origin of a broad 2.0-2.4 eV band, and the intrinsic defects in SiO2 as the possible origin of the -2.9 eV bands. In low temperature photoluminescence spectra, two sharp and intense photoluminescence lines at -3.31 eV and -3.34 eV appear for the samples annealed for 90 min and 120 min, whereas no such bands are observed in the samples annealed for 10 min, 30 min, and 60 min. The Si nano-clusters forming at the Si-SiO2 interface could be the origin of these intense peaks.

A Simple Prelithiation Strategy To Build a High-Rate and Long-Life Lithium-Ion Battery with Improved Low-Temperature Performance.

PubMed

Liu, Yao; Yang, Bingchang; Dong, Xiaoli; Wang, Yonggang; Xia, Yongyao

2017-12-22

Lithium-ion batteries (LIBs) are being used to power the commercial electric vehicles (EVs). However, the charge/discharge rate and life of current LIBs still cannot satisfy the further development of EVs. Furthermore, the poor low-temperature performance of LIBs limits their application in cold climates and high altitude areas. Herein, a simple prelithiation method is developed to fabricate a new LIB. In this strategy, a Li 3 V 2 (PO 4 ) 3 cathode and a pristine hard carbon anode are used to form a primary cell, and the initial Li + extraction from Li 3 V 2 (PO 4 ) 3 is used to prelithiate the hard carbon. Then, the self-formed Li 2 V 2 (PO 4 ) 3 cathode and prelithiated hard carbon anode are used to form a 4 V LIB. The LIB exhibits a maximum energy density of 208.3 Wh kg -1 , a maximum power density of 8291 W kg -1 and a long life of 2000 cycles. When operated at -40 °C, the LIB can keep 67 % capacity of room temperature, which is much better than conventional LIBs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi6-x/3Fe2Ti3-2x(WCo)xO18 (0 ≤ x ≤ 0.15)

NASA Astrophysics Data System (ADS)

Zuo, X. Z.; Yang, J.; Yuan, B.; Song, D. P.; Tang, X. W.; Zhang, K. J.; Zhu, X. B.; Song, W. H.; Dai, J. M.; Sun, Y. P.

2015-03-01

We investigate the structural, magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi6-x/3Fe2Ti3-2x(WCo)xO18 (0 ≤ x ≤ 0.15). The room-temperature weak ferromagnetism is observed for the W/Co co-doped samples. The results of the dielectric constant ɛr, complex impedance Z ″ , the dc conductivity σdc, and hopping frequency fH manifest that the dielectric relaxation of the x = 0 sample and the doped samples in the dielectric anomaly region (450-750 K) can be ascribed to the trap-controlled ac conduction around the doubly ionized oxygen vacancies and the localized hopping process of oxygen vacancies, respectively. The scaling behaviors reveal that the dynamic process of both electrons in the x = 0 sample and oxygen vacancies in the doped samples is temperature independent. The ferroelectric Curie-temperature Tc decreases slightly from 973 K to 947 K with increasing the doping level of W/Co. In addition, the dielectric loss exhibits a dielectric relaxation above 800 K with the rather large activation energies (1.95 eV ≤ Ea ≤ 2.72 eV).

Transmission, reflection and thermoluminescence studies on GaS{sub 0.75}Se{sub 0.25} layered single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delice, S., E-mail: sdelice@metu.edu.tr; Isik, M.; Gasanly, N.M.

2015-10-15

Highlights: • Optical and thermoluminescence properties of Ga{sub 4}S{sub 3}Se crystals were investigated. • Indirect and direct band gap energies were found as 2.39 and 2.53 eV, respectively. • The activation energy of the trap center was determined as 495 meV. - Abstract: Optical and thermoluminescence properties on GaS{sub 0.75}Se{sub 0.25} crystals were investigated in the present work. Transmission and reflection measurements were performed at room temperature in the wavelength range of 400–1000 nm. Analysis revealed the presence of indirect and direct transitions with band gap energies of 2.39 and 2.53 eV, respectively. TL spectra obtained at low temperatures (10–300more » K) exhibited one peak having maximum temperature of 168 K. Observed peak was analyzed using curve fitting, initial rise and peak shape methods to calculate the activation energy of the associated trap center. All applied methods were consistent with the value of 495 meV. Attempt-to-escape-frequency and capture cross section of the trap center were determined using the results of curve fitting. Heating rate dependence studies of the glow curve in the range of 0.4–0.8 K/s resulted with decrease of TL intensity and shift of the peak maximum temperature to higher values.« less

Formation of novel transition metal hydride complexes with ninefold hydrogen coordination

PubMed Central

Takagi, Shigeyuki; Iijima, Yuki; Sato, Toyoto; Saitoh, Hiroyuki; Ikeda, Kazutaka; Otomo, Toshiya; Miwa, Kazutoshi; Ikeshoji, Tamio; Orimo, Shin-ichi

2017-01-01

Ninefold coordination of hydrogen is very rare, and has been observed in two different hydride complexes comprising rhenium and technetium. Herein, based on a theoretical/experimental approach, we present evidence for the formation of ninefold H- coordination hydride complexes of molybdenum ([MoH9]3−), tungsten ([WH9]3−), niobium ([NbH9]4−) and tantalum ([TaH9]4−) in novel complex transition-metal hydrides, Li5MoH11, Li5WH11, Li6NbH11 and Li6TaH11, respectively. All of the synthesized materials are insulated with band gaps of approximately 4 eV, but contain a sufficient amount of hydrogen to cause the H 1s-derived states to reach the Fermi level. Such hydrogen-rich materials might be of interest for high-critical-temperature superconductivity if the gaps close under compression. Furthermore, the hydride complexes exhibit significant rotational motions associated with anharmonic librations at room temperature, which are often discussed in relation to the translational diffusion of cations in alkali-metal dodecahydro-closo-dodecaborates and strongly point to the emergence of a fast lithium conduction even at room temperature. PMID:28287143

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

NASA Astrophysics Data System (ADS)

Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

2014-01-01

Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Santos, R.; Loureiro, J.; Nogueira, A.; Elangovan, E.; Pinto, J. V.; Veiga, J. P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I.

2013-10-01

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of -218 μV/K and electrical conductivity of 5.5 (Ω m)-1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Synthesis and electronic properties of Fe 2TiO 5 epitaxial thin films

DOE PAGES

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; ...

2018-05-02

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

NASA Astrophysics Data System (ADS)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso > Eg

NASA Astrophysics Data System (ADS)

Chai, Grace M. T.; Broderick, C. A.; O'Reilly, E. P.; Othaman, Z.; Jin, S. R.; Petropoulos, J. P.; Zhong, Y.; Dongmo, P. B.; Zide, J. M. O.; Sweeney, S. J.; Hosea, T. J. C.

2015-09-01

Temperature dependent photo-modulated reflectance is used to measure the band gap Eg and spin-orbit splitting energy Δso in dilute-Bi In0.53Ga0.47As1-xBix/InP for 1.2% ≤ x ≤ 5.8%. At room temperature, Eg decreases with increasing Bi from 0.65 to 0.47 eV (˜2.6 μm), while Δso increases from 0.42 to 0.62 eV, leading to a crossover between Eg and Δso around 3.8% Bi. The 5.8% Bi sample is the first example of this alloy where Δso > Eg has been confirmed at all temperatures. The condition Δso > Eg is important for suppressing hot-hole-producing non-radiative Auger recombination and inter-valence band absorption losses and so holds promise for the development of mid-infra-red devices based on this material system. The measured variations of Eg and Δso as a function of Bi content at 300 K are compared to those calculated using a 12-band k.p Hamiltonian which includes valence band anti-crossing effects. The Eg results as a function of temperature are fitted with the Bose-Einstein model. We also look for evidence to support the prediction that Eg in dilute bismides may show a reduced temperature sensitivity, but find no clear indication of that.

Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

NASA Astrophysics Data System (ADS)

Al-Daraghmeh, Tariq M.; Saleh, Mahmoud H.; Ahmad, Mais Jamil A.; Bulos, Basim N.; Shehadeh, Khawla M.; Jafar, Mousa M. Abdul-Gader

2018-03-01

The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures T_{{s}} = 150 °C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal-semiconductor-metal (MSM-) structures. The as-measured constant- temperature direct-current (dc)-voltage ( I( {V;T} ) - V ) curves of the obtained lateral coplanar Cu-PbI2-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures ( T = 18 - 90°C). Their dc electrical resistance R_{{dc}} (T ) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy E_{{act}} ≈ 0.90 - 0.98 {eV} , slightly less than half of room-temperature bandgap energy E_{{g}} ( ≈ 2.3 {eV} ) of undoped 2H-polytype PbI2 single crystals. The undoped flash-evaporated {PbI}_{{x}} thin films were homogeneous and almost stoichiometric ( x ≈ 1.87 ), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at T_{s} ≳ 150°C. Photoconductivity measurements made on these lateral Cu-PbI2-Cu-structures under on-off visible-light illumination reveal a feeble photoresponse for long wavelengths ( λ > 570 {nm} ), but a strong response to blue light of photon energy E_{{ph}} ≈ 2.73 {eV} ( > E_{{g}} ), due to photogenerated electron-hole (e-h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current-time I( {T,V} ) - t curves of the studied lateral PbI2 MSM-structures at low ambient temperatures ( T < 50°C), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on V and T , with thermally generated charge carriers in the PbI2 mask photogenerated (e-h) pairs at higher temperatures.

Characterization of W-Ti-O thin films for application in photovoltaics

NASA Astrophysics Data System (ADS)

Christmas, Amanda P.

Photovoltaic (PV) devices consist of the conversion of light energy into electricity. Nearly all PV technologies employ transparent conducting oxides (TCO) as an integral part of the de-vice structure so that the light can reach the semiconductor. The predominant transparent conducting oxide (TCO) that is currently being used in industry is indium tin oxide (ITO). However, Indium (In) is high in cost and becoming scarce in the world. This work is focused towards Titanium doped Tungsten oxide (WO3) for TCO application. The ultimate goal is making novel, cheaper, and efficient TCOs based on W-Ti-O films. Titanium will enhance the conductivity of the film. In addition, Ti is more abundant than In thus leading to low-cost TCO. Ti-doped WO3 (W-Ti-O) films were grown by co-sputter deposition onto silicon, Si (100), and optical grade quartz wafers. Co-sputtering of Ti and W metal targets was per-formed in a wide growth temperature range (room temperature (RT)-500 °C). The Ti sputter-ing power varied from 50 watts-100 watts in order to gain an understanding of the Ti effect. The structure and optical properties were characterized by the X-ray diffraction (XRD), scan-ning electron microscopy (SEM) and the spectrophotometry measurements. The films are op-tically transparent and a correlation between the growth conditions and optical properties is derived. The XRD results show W-Ti-O films grown at RT are amorphous and the films crys-tallize at 200°C. A decrease in the peak intensity implies that the crystallinity decreases with an increase in titanium (Ti) along with a phase change at higher substrate growth tempera-tures. The optical results show the transparency of the films is well above 80%. The energy band gap decreases from 4.0 eV to 3.9 eV with an increase in substrate temperature and in-creases from 3.85 eV to 3.95 eV with an increase of Ti. These results meet the criteria of two essential TCO parameters.

DFT Studies of Semiconductor and Scintillator Detection Materials

NASA Astrophysics Data System (ADS)

Biswas, Koushik

2013-03-01

Efficient radiation detection technology is dependent upon the development of new semiconductor and scintillator materials with advanced capabilities. First-principles based approaches can provide vital information about the structural, electrical, optical and defect properties that will help develop new materials. In addition to the predictive power of modern density functional methods, these techniques can be used to establish trends in properties that may lead to identifying new materials with optimum properties. We will discuss the properties of materials that are of current interest both in the field of scintillators and room temperature semiconductor detectors. In case of semiconductors, binary compounds such as TlBr, InI, CdTe and recently developed ternary chalcohalide Tl6SeI4 will be discussed. Tl6SeI4 mixes a halide (TlI) with a chalcogenide (Tl2Se), which results in an intermediate band gap (1.86 eV) between that of TlI (2.75 eV) and Tl2Se (0.6 eV). For scintillators, we will discuss the case of the elpasolite compounds whose rich chemical compositions should enable the fine-tuning of the band gap and band edges to achieve high light yield and fast scintillation response.

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshmukh, S. G., E-mail: deshmukhpradyumn@gmail.com; Jariwala, Akshay; Agarwal, Anubha

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl{sub 2} and Na{sub 2}S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grainmore » size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm{sup −1} and 1094 cm{sup −1}. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.« less

Photosensitivity of layered semiconductor propolis heterocontact

NASA Astrophysics Data System (ADS)

Drapak, Stepan I.; Orletskii, Volodymyr B.; Bahtinov, Anatolii P.; Kovalyuk, Zakhar D.; Fotiy, Vasyl D.

2003-03-01

Room temperature photosensitivity and its spectral distribution are investigated for a hetercontact between a layered semiconductor (p-InSe) and a biological entity (propolis). The obtained heterocontacts has a maximum photosensitivity >= 10^4 V/W. It is shown that the form of spectral sensitivity curve depends on the way of the heterocontact preparation. The long-wave edge of relative quantum efficiency varies from hν =1.2 eV (the energy gap for InSe at T=300 K) to 1.6 eV depending on a state of aggregation of propolis. The maximum photosensitivity in the long-wave spectral range takes place when the propolis layer is under illumination. The obtained peculiarities of the photoelectrical properties cannot be explained in the framework of the classical description of photosensitivity spectral description (the window effect) what follows from the optical absorption measurements for InSe and propolis in the range hν <= 1.2 eV. Impurity states in the energy gap of InSe and states at the heterocontact interface (a classical case of isotype p-p heterojunction) also do not give an appropriate explanation. To interpret the obtained results the complexity of the chemical composition of propolis, a product from honey bee, must be taken into account.

TES X-ray microcalorimeters for X-ray astronomy and material analysis

NASA Astrophysics Data System (ADS)

Mitsuda, Kazuhisa

2016-11-01

TES X-ray microcalorimeter arrays provide not only high-energy resolution (FWHM < 10eV) in X-ray spectroscopy but also imaging and high-counting-rate capabilities. They are very promising spectrometer for X-ray astronomy and material analysis. In this paper, we report our recent progress. For material analysis, we have fabricated 8 × 8 format array with a fast signal response ( 40 μs) and proved the energy resolution of 5.8 eV FWHM at 5.9 keV. We developed common biasing scheme to reduce number of wirings from room temperature to the cryogenic stage. From measurements using the newly-designed common-bias SQUID array amplifier chips, and from numerical simulations, we demonstrated that signal cross talks due to the common bias is enough small. For space applications, we are developing frequency-division signal multiplexing system. We have fabricated a baseband feedback system and demonstrated that the noise added by the feedback system is about 4 eV FWHM equivalent for 16 ch multiplexing system. The digital to analog converter (DAC) dominates the noise, and needs be reduced by a factor of four for future astronomy missions.

Characterisation of Cs ion implanted GaN by DLTS

NASA Astrophysics Data System (ADS)

Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Hlatshwayo, T. T.; Diale, M.

2018-04-01

Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10-11 cm-2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10-15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

NASA Astrophysics Data System (ADS)

Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

2016-10-01

We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

Band bending at magnetic Ni/Ge(001) interface investigated by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Bocîrnea, Amelia Elena; Tănase, Liviu Cristian; Costescu, Ruxandra Maria; Apostol, Nicoleta Georgiana; Teodorescu, Cristian Mihail

2017-12-01

We report the molecular beam epitaxy growth of Ni on a clean Ge(001) surface with an intermediate NiGe layer forming at the interface at room temperature. The crystallinity of the substrate is lost after the deposition of more than 2 Ni monolayers. The Schottky barrier formation is investigated by X-ray photoelectron spectroscopy. The method allows us to infer a 0.39-0.45 eV band bending at the interface between the compound and Ge(001). Magneto-optical Kerr effect measurements were conclusive in detecting the ferromagnetic ordering of Ni outermost layers.

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Yang, J.; Du, H. W.; Li, Y.; Gao, M.; Wan, Y. Z.; Xu, F.; Ma, Z. Q.

2016-08-01

The carriers' behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se2 thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely VSe, InCu and (InCu+VCu), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of EC-0.08, EC-0.20 and EC-0.25 eV, respectively. The InCu and (InCu+VCu) deep level defects are non-radiative recombination centers at room temperature. The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se2 layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (InCu+VCu) and Vse defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se2 conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.

Effect of multinary substitution on electronic and transport properties of TiCoSb based half-Heusler alloys

NASA Astrophysics Data System (ADS)

Choudhary, Mukesh K.; Ravindran, P.

2018-05-01

The electronic structures of TixZrx/2CoPbxTex, TixZrx/2Hfx/2CoPbxTex (x = 0.5), and the parent compound TiCoSb were investigated using the full potential linearized augmented plane wave method. The thermoelectric transport properties of these alloys are calculated on the basis of semi-classical Boltzmann transport theory. From the band structure calculations we show that the substitution of Zr,Hf in the Ti site and Pb and Te in the Sb site lower the band gap value and also change the indirect band (IB) gap of TiCoSb to the direct band (DB) gap. The calculated band gap of TiCoSb, TixZrx/2CoPbxTex, and TixZrx/2Hfx/2CoPbxTex are 1.04 eV (IB), 0.92 eV (DB), and 0.93 eV (DB), respectively. All these alloys follow the empirical rule of 18 valence-electron content which is essential for bringing semiconductivity in half Heusler alloys. It is shown that the substitution of Hf at the Ti site improve the ZT value (˜1.05) at room temperature, whereas there is no significant difference in ZT is found at higher temperature. Based on the calculated thermoelectric transport properties, we conclude that the appropriate concentration of Hf substitution can further improve the thermoelectric performance of TixZrx/2Hfx/2CoPbxTex.

The study of optical property of sapphire irradiated with 73 MeV Ca ions

NASA Astrophysics Data System (ADS)

Yang, Yitao; Zhang, Chonghong; Song, Yin; Gou, Jie; Liu, Juan; Xian, Yongqiang

2015-12-01

Single crystals of sapphire were irradiated with 73 MeV Ca ions at room temperature to the fluences of 0.1, 0.5 and 1.0 × 1014 ions/cm2. Optical properties of these samples were characterized by ultraviolet-visible spectrometry (UV-VIS) and fluorescence spectrometer (PL). In UV-VIS spectra, it is observed the absorbance bands from oxygen single vacancy (F and F+ color centers) and vacancy pair (F2+ and F22+ color centers). The oxygen single vacancy initially increases rapidly and then does not increase in the fluence range from 0.1 to 0.5 × 1014 ions/cm2. When the fluence is higher than 0.5 × 1014 ions/cm2, oxygen single vacancy starts to increase again. Oxygen vacancy pair increases monotonically with fluence for all irradiated samples. The variation of oxygen single vacancy with fluence is probably associated with the recombination of oxygen vacancies with Al interstitials and complex defect formation (such as vacancy clusters). From PL spectra, two emission bands around 3.1 and 2.34 eV are observed. The PL intensity of the emission band around 3.1 eV decreases for all the irradiated samples. For the emission band around 2.34 eV, the PL intensity initially decreases, and then increases with fluence. Meanwhile, the peak position of the emission band around 2.34 eV gradually shifts to high energy direction with increase of fluence. The decrease of the intensity of the emission bands around 3.1 and 2.34 eV could be induced by stress from the damage layer in the irradiated samples. The shift of peak position for the emission band around 2.34 eV is induced by the appearance of emission band from Al interstitials.

Conductivity and transport studies of plasticized chitosan-based proton conducting biopolymer electrolytes

NASA Astrophysics Data System (ADS)

Shukur, M. F.; Yusof, Y. M.; Zawawi, S. M. M.; Illias, H. A.; Kadir, M. F. Z.

2013-11-01

This paper focuses on the conductivity and transport properties of chitosan-based solid biopolymer electrolytes containing ammonium thiocyanate (NH4SCN). The sample containing 40 wt% NH4SCN exhibited the highest conductivity value of (1.81 ± 0.50) × 10-4 S cm-1 at room temperature. Conductivity has increased to (1.51 ± 0.12) × 10-3 S cm-1 with the addition of 25 wt% glycerol. The temperature dependence of conductivity for both salted and plasticized systems obeyed the Arrhenius rule. The activation energy (Ea) was calculated for both systems and it is found that the sample with 40 wt% NH4SCN in the salted system obtained an Ea value of 0.148 eV and that for the sample containing 25 wt% glycerol in the plasticized system is 0.139 eV. From the Fourier transform infrared studies, carboxamide and amine bands shifted to lower wavenumbers, indicating that chitosan has interacted with NH4SCN salt. Changes in the C-O stretching vibration band intensity are observed at 1067 cm-1 with the addition of glycerol. The Rice and Roth model was used to explain the transport properties of the salted and plasticized systems.

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

NASA Astrophysics Data System (ADS)

Sarpi, B.; Zirmi, R.; Putero, M.; Bouslama, M.; Hemeryck, A.; Vizzini, S.

2018-01-01

Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6-8 eV band gap) is also reported.

A novel approach to obtain highly intense self-activated photoluminescence emissions in hydroxyapatite nanoparticles

NASA Astrophysics Data System (ADS)

Machado, Thales R.; Sczancoski, Júlio C.; Beltrán-Mir, Héctor; Nogueira, Içamira C.; Li, Máximo S.; Andrés, Juan; Cordoncillo, Eloisa; Longo, Elson

2017-05-01

Defect-related photoluminescence (PL) in materials have attracted interest for applications including near ultraviolet (NUV) excitable light-emitting diodes and in biomedical field. In this paper, hydroxyapatite [Ca10(PO4)6(OH)2] nanorods with intense PL bands (bluish- and yellowish-white emissions) were obtained when excited under NUV radiation at room temperature. These nanoparticles were synthesized via chemical precipitation at 90 °C followed by distinct heat treatments temperatures (200-800 °C). Intense and broad emission profiles were achieved at 350 °C (380-750 nm) and 400 °C (380-800 nm). UV-Vis spectroscopy revealed band gap energies (5.58-5.78 eV) higher than the excitation energies ( 3.54 and 2.98 eV at 350 and 415 nm, respectively), confirming the contribution of defect energy levels within the forbidden zone for PL emissions. The structural features were characterized by X-ray diffraction, Rietveld refinement, thermogravimetric analysis, and Fourier transform infrared spectroscopy. By means of these techniques, the relation between structural order-disorder induced by defects, chemical reactions at both lattice and surface of the materials as well as the PL, without activator centers, was discussed in details.

Synthesis of nano-scale fast ion conducting cubic Li7La3Zr2O12.

PubMed

Sakamoto, Jeff; Rangasamy, Ezhiylmurugan; Kim, Hyunjoung; Kim, Yunsung; Wolfenstine, Jeff

2013-10-25

A solution-based process was investigated for synthesizing cubic Li7La3Zr2O12 (LLZO), which is known to exhibit the unprecedented combination of fast ionic conductivity, and stability in air and against Li. Sol-gel chemistry was developed to prepare solid metal-oxide networks consisting of 10 nm cross-links that formed the cubic LLZO phase at 600 ° C. Sol-gel LLZO powders were sintered into 96% dense pellets using an induction hot press that applied pressure while heating. After sintering, the average LLZO grain size was 260 nm, which is 13 times smaller compared to LLZO prepared using a solid-state technique. The total ionic conductivity was 0.4 mS cm(-1) at 298 K, which is the same as solid-state synthesized LLZO. Interestingly, despite the same room temperature conductivity, the sol-gel LLZO total activation energy is 0.41 eV, which 1.6 times higher than that observed in solid-state LLZO (0.26 eV). We believe the nano-scale grain boundaries give rise to unique transport phenomena that are more sensitive to temperature when compared to the conventional solid-state LLZO.

Ordinary and extraordinary dielectric functions of rutile SnO{sub 2} up to 20 eV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feneberg, Martin, E-mail: martin.feneberg@ovgu.de; Lidig, Christian; Lange, Karsten

2014-06-09

Spectroscopic ellipsometry at room temperature is applied in order to determine the ordinary (ε{sub ⊥}) and extraordinary (ε{sub ∥}) dielectric functions (DFs) of rutile SnO{sub 2} corresponding to electric field (E) polarization perpendicular (E⊥c) and parallel (E∥c) to the optical axis (c), respectively. Strong anisotropic behavior is found for the full spectral range from 0.5 up to 20 eV. The onsets of strong absorption are found at 4.28 eV and 5.42 eV for E⊥c and E∥c, respectively. A dipole-forbidden band gap at (3.59 ± 0.2) eV at room temperature is found by line shape fits to the imaginary parts of the DFs. Further high-energy transitionsmore » are resolved. Their accurate energy values are obtained by fitting the second derivatives of the DFs. Comparison to published DFs calculated by ab-initio theory demonstrates that the electron-hole interaction in SnO{sub 2} is strong and has to be included for interpretation.« less

Ellipsometric characterization of MoSe2 thin layers obtained by thermal treatment of molybdenum in selenium vapor

NASA Astrophysics Data System (ADS)

Bayramov, Ayaz; Aliyeva, Yegana; Eyyubov, Gurban; Mammadov, Eldar; Jahangirli, Zakir; Lincot, Daniel; Mamedov, Nazim

2017-11-01

Submicron MoSe2 layers were prepared by thermal treatment of thick Mo layers on glass substrate in saturated selenium vapor. Spectroscopic ellipsometry was then applied to the obtained MoSe2/Mo/Glass structures and MoSe2 target sample at room temperature. Dielectric function for both the MoSe2 layer and MoSe2 target was retrieved in the spectral range 190-1700 nm by using the Kramers-Kronig consistent B-spline dispersion model. The obtained data were similar in both cases. Despite apparent red shift of the dielectric function spectra of the layer in high energy region the peculiarity at around 1 eV is manifested at the same energy for both, layer and target. Comparison of the ellipsometry-based dielectric function of the target and the one, obtained within calculated band structure of MoSe2 for room temperature lattice parameters, has shown that the former is a broadened counterpart of the latter. Above-mentioned peculiar feature is not reproduced in the calculated dielectric function and is assumed to have excitonic nature.

Effects of site disorder, off-stoichiometry and epitaxial strain on the optical properties of magnetoelectric gallium ferrite.

PubMed

Roy, Amritendu; Mukherjee, Somdutta; Sarkar, Surajit; Auluck, Sushil; Prasad, Rajendra; Gupta, Rajeev; Garg, Ashish

2012-10-31

We present a combined experimental-theoretical study demonstrating the role of site disorder, off-stoichiometry and strain on the optical properties of magnetoelectric gallium ferrite. Optical properties (bandgap, refractive indices and dielectric constants) were experimentally obtained by performing ellipsometric studies over the energy range 0.8-4.2 eV on pulsed laser deposited epitaxial thin films of stoichiometric gallium ferrite with b-axis orientation and the data were compared with theoretical results. Calculations on the ground state structure show that the optical activity in GaFeO(3) arises primarily from O 2p-Fe 3d transitions. Further, inclusion of site disorder and epitaxial strain in the ground state structure significantly improves the agreement between the theory and the room temperature experimental data substantiating the presence of site disorder in the experimentally derived strained GaFeO(3) films at room temperature. We attribute the modification of the ground state optical behavior upon inclusion of site disorder to the corresponding changes in the electronic band structure, especially in Fe 3d states leading to a lowered bandgap of the material.

Synthesis and electrical behavior of Ni-Ti substituted Y-type hexaferrites for high frequency application

NASA Astrophysics Data System (ADS)

Ahmad, Bashir; Ashiq, Muhammad Naeem; Mumtaz, Saleem; Ali, Irshad; Najam-Ul-Haq, Muhmmad; Sadiq, Imran

2018-04-01

This article reports the fabrication of Ni-Ti doped derivatives of Sr2Co2Fe12-2xO22 by economical Sol-gel method. At room temperature X-ray diffraction (XRD) pattern of powder was obtained after sintering at 1050 °C. The XRD analysis revealed the formation of pure Sr-Y hexaferrite phase. It was found that the observed values of dielectric parameters decreased with increasing Ni-Ti substitution. The higher values of dielectric constants and dielectric loss factor at lower frequency were owing to surface charge polarization. In all the samples the resonance peaks were also observed. The observed room temperature DC electrical resistivity found to increase from 1.8x106 to 4.9x109 ohm cm. The observed activation energies values of the fabricated materials are found in 0.52-0.82 eV range. The decrease in dielectric parameters and increase in resistivity of the fabricated samples with substituents suggest these materials have worth application in micro-wave devices as such devices required highly resistive materials.

Study on optical properties of L-valine doped ADP crystal

NASA Astrophysics Data System (ADS)

Shaikh, R. N.; Anis, Mohd.; Shirsat, M. D.; Hussaini, S. S.

2015-02-01

Single crystal of L-valine doped ammonium dihydrogen phosphate has been grown by slow evaporation method at room temperature. The crystalline nature of the grown crystal was confirmed using powder X-ray diffraction technique. The different functional groups of the grown crystal were identified using Fourier transform infrared analysis. The UV-visible studies were employed to examine the high optical transparency and influential optical constants for tailoring materials suitability for optoelectronics applications. The cutoff wavelength of the title crystal was found to be 280 nm with wide optical band gap of 4.7 eV. The dielectric measurements were carried to determine the dielectric constant and dielectric loss at room temperature. The grown crystal has been characterized by thermogravimetric analysis. The second harmonic generation efficiency of the grown crystal was determined by the classical Kurtz powder technique and it is found to be 1.92 times that of potassium dihydrogen phosphate. The grown crystal was identified as third order nonlinear optical material employing Z-scan technique using He-Ne laser operating at 632.8 nm.

Statistical study of the reliability of oxide-defined stripe cw lasers of (AlGa)As

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ettenberg, M.

1979-03-01

In this report, we describe a statistical study of the reliability of oxide-defined stripe-contact cw injection lasers of (AlGa)As. These devices have one facet coated with Al/sub 2/O/sub 3/ and one facet coated with an Al/sub 2/O/sub 3//Si dichroic reflector; the lasers are optimized for cw low-threshold currents at room temperature, with values typically about 50 mA. Lifetests were carried out at 70 /sup 0/C ambient, in the cw mode of operation with about 5 mW output. Previous lifetests showed that the degradation rate followed a 0.95-eV activation energy so the 70 /sup 0/C environment provides a degradation acceleration factormore » of 190 over that at room temperature. We have found that the device failures follow a log-normal distribution, characterized by a mean time before failure of 4200 h and a standard deviation of 1.3. This corresponds to a mean time to failure (MTTF) of 10/sup 6/ h at room temperature. Failure is defined here as the inability of the device to emit 1 mW of stimulated cw output at 70 /sup 0/C, and assumes that optical feedback will be employed to adjust the laser current during operation. If a constant-current drive is envisioned, the failures for a 3-dB drop in light output also follow a log-normal distribution with a similar slope (standard deviation=1.1) and a MTTF of 2000 h at 70 /sup 0/C (500 000 h at room temperature). The failures were found to be mainly due to bulk gradual degradation and not facet or contact failure. Careful study of lasers before and after lifetest showed a significant increase in contact thermal resistance. However, this increase accounts for only a small portion of the nearly 70% increase in room-temperature cw threshold after failure at 70 /sup 0/C. After failure at 70 /sup 0/C, we also noted a degradation in the near-field and associated far-field pattern of the laser.« less

Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu2SnSe3

NASA Astrophysics Data System (ADS)

Marcano, G.; Rincón, C.; de Chalbaud, L. M.; Bracho, D. B.; Pérez, G. Sánchez

2001-08-01

X-ray powder diffraction by p-type Cu2SnSe3, prepared by the vertical Bridgman-Stockbarger technique, shows that this material crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a=6.5936(1) Å, b=12.1593(4) Å, c=6.6084(3) Å, and β=108.56(2)°. The temperature variation of the hole concentration p obtained from the Hall effect and electrical resistivity measurements from about 160 to 300 K, is explained as due to the thermal activation of an acceptor level with an ionization energy of 0.067 eV, whereas below 100 K, the conduction in the impurity band dominates the electrical transport process. From the analysis of the p vs T data, the density-of-states effective mass of the holes is estimated to be nearly of the same magnitude as the free electron mass. In the valence band, the temperature variation of the hole mobility is analyzed by taking into account the scattering of charge carriers by ionized and neutral impurities, and acoustic phonons. In the impurity band, the mobility is explained as due to the thermally activated hopping transport. From the analysis of the optical absorption spectra at room temperature, the fundamental energy gap was determined to be 0.843 eV. The photoconductivity spectra show the presence of a narrow band gap whose main peak is observed at 0.771 eV. This band is attributed to a free-to-bound transition from the defect acceptor level to the conduction band. The origin of this acceptor state, consistent with the chemical composition of the samples and screening effects, is tentatively attributed to selenium interstitials.

Synthesis, characterization, temperature dependent electrical and magnetic properties of Ca3Co4O9 by a starch assisted sol-gel combustion method

NASA Astrophysics Data System (ADS)

Agilandeswari, K.; Ruban Kumar, A.

2014-09-01

In this present work we discussed the synthesis of pure Ca3Co4O9 ceramic powder by a starch assisted sol-gel combustion method. The products were characterized by powder X-ray diffraction (XRD), thermogravimetric and differential thermal analyses (TGA-DTA), Fourier transformation infrared spectroscopy (FTIR), scanning electron microscope (SEM) and UV-visible diffuse reflectance spectroscopy (DRS). X-ray diffraction pattern confirmed the formation of single phase Ca3Co4O9 at a sintering temperature of 1073 K, and it is also confirmed in the thermal analysis. SEM images indicate the presence of diffused microporous sphere like morphology and the grain sizes are in the range of 150-300 nm. Optical properties of Ca3Co4O9 ceramic show a band gap at an energy level of 2.10 eV. A maximum electrical resistivity of 0.002 mΩ cm was exhibited by Ca3Co4O9 that was decreased to 0.0012 mΩ cm, when the temperature increased from 300 K to 473 K. Dielectric studies were conducted at various temperatures from room temperature to 673 K and the results indicate that the space charge polarization contributes to the conduction mechanism. It also shows that the dielectric relaxation with activation energy is 0.96 eV. The magnetic properties as a function of temperature represent the ferri-paramagnetic phase transition at above 50 K. M-H curve shows the hysteresis loop with saturation magnetization (Ms) and confirms the presence of soft magnetic materials.

Electron heated target temperature measurements in petawatt laser experiments based on extreme ultraviolet imaging and spectroscopy.

PubMed

Ma, T; Beg, F N; MacPhee, A G; Chung, H-K; Key, M H; Mackinnon, A J; Patel, P K; Hatchett, S; Akli, K U; Stephens, R B; Chen, C D; Freeman, R R; Link, A; Offermann, D T; Ovchinnikov, V; Van Woerkom, L D

2008-10-01

Three independent methods (extreme ultraviolet spectroscopy, imaging at 68 and 256 eV) have been used to measure planar target rear surface plasma temperature due to heating by hot electrons. The hot electrons are produced by ultraintense laser-plasma interactions using the 150 J, 0.5 ps Titan laser. Soft x-ray spectroscopy in the 50-400 eV region and imaging at the 68 and 256 eV photon energies give a planar deuterated carbon target rear surface pre-expansion temperature in the 125-150 eV range, with the rear plasma plume averaging a temperature approximately 74 eV.

Electrical properties of lunar soil sample 15301,38

NASA Technical Reports Server (NTRS)

Olhoeft, G. R.; Frisillo, A. L.; Strangway, D. W.

1974-01-01

Electrical property measurements have been made on an Apollo 15 lunar soil sample in ultrahigh vacuum from room temperature to 827 C for the frequency spectrum from 100 Hz through 1 MHz. The dielectric constant, the total ac loss tangent, and the dc conductivity were measured. The dc conductivity showed no thermal hysteresis, but an irreversible (in vacuum) thermal effect was found in the dielectric loss tangent on heating above 700 C and during the subsequent cooling. This appears to be related to several effects associated with lunar glass above 700 C. The sample also showed characteristic low-frequency dispersion in the dielectric constant with increasing temperature, presumably due to Maxwell-Wagner intergranular effects. The dielectric properties may be fitted to a model involving a Cole-Cole frequency distribution that is relatively temperature-independent below 200 C and follows a Boltzmann temperature distribution with an activation energy of 2.5 eV above 200 C. The dc conductivity is fitted by an exponential temperature distribution and becomes the dominant loss above 700 C.

Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures

NASA Astrophysics Data System (ADS)

Thiery, N.; Naletov, V. V.; Vila, L.; Marty, A.; Brenac, A.; Jacquot, J.-F.; de Loubens, G.; Viret, M.; Anane, A.; Cros, V.; Ben Youssef, J.; Beaulieu, N.; Demidov, V. E.; Divinskiy, B.; Demokritov, S. O.; Klein, O.

2018-02-01

We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of Eg≈2 eV. It drops to values about 5 ×103Ω cm at T =400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm2V-1sec-1 and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.

On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2-PVA/n-Si Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Bilkan, Ç.; Badali, Y.; Fotouhi-Shablou, S.; Azizian-Kalandaragh, Y.; Altındal, Ş.

2017-08-01

In this paper, we report the preparation and characterization of SnO2-PVA nanocomposite film as interlayer for Schottky barrier diodes (SBDs). The possible current transport mechanisms (CTMs) of the prepared SBDs were investigated using the forward-bias current-voltage ( I- V) characteristics in the temperature range of 80-400 K. The structure of nanocomposite film was characterized by an X-ray diffractometer (XRD) and the surface morphology was investigated using a Scanning Electron Microscopy (SEM) at room temperature. The values of ideality factor ( n) and zero-bias barrier height (\\overline{Φ}_{Bo}) showed variation with temperature, such that they changed from 19.10 to 3.77 and 0.190 to 0.844 eV, respectively. \\overline{Φ}_{Bo}- n, \\overline{Φ}_{Bo}- q/2 kT, and n -1- q/2 kT plots were drawn to get evidence to the Gaussian Distribution (GD) of the barrier height (BH). These plots revealed two distinct linear regions with different slopes for low temperatures (80-160 K) (LTs) and high temperatures (180-400 K) (HTs). This behavior is an evidence to the existence double GD of BHs which provides an average value for BH (\\overline{Φ}_{Bo}) and a standard deviation (σs) for each region. The high value of n especially at low temperatures was attributed to the existence of interlayer: interface states ( N ss) and barrier inhomogeneity at Au/n-Si interface. The values of \\overline{Φ}_{Bo} and σs were obtained from the intercept and slope of mentioned plots as 0.588 and 0.0768 V for LTs and 1.183 eV and 0.158 V for HTs, respectively. Moreover, the modified ln( I s/ T 2)- q 2σ s 2 /2 k 2 T 2 vs q/ kT plot also showed two linear regions. The values of \\overline{Φ}_{Bo} and effective Richardson constant ( A *) were extracted from the slope and intercept of this plot as 0.610 eV and 93.13 A/cm2 K2 for LTs and 1.235 eV and 114.65 A/cm2 K2 for HTs, respectively. The value of A* for HTs is very close to the theoretical value (112 A/cm2 K2) of n-type Si. Thus, the forward-bias I- V- T characteristics of Au/SnO2-PVA/n-Si (SBDs) were successfully explained in terms of the thermionic-emission (TE) mechanism with a double GD of BHs.

Thermal effects on electronic properties of CO/Pt(111) in water.

PubMed

Duan, Sai; Xu, Xin; Luo, Yi; Hermansson, Kersti; Tian, Zhong-Qun

2013-08-28

Structure and adsorption energy of carbon monoxide molecules adsorbed on the Pt(111) surfaces with various CO coverages in water as well as work function of the whole systems at room temperature of 298 K were studied by means of a hybrid method that combines classical molecular dynamics and density functional theory. We found that when the coverage of CO is around half monolayer, i.e. 50%, there is no obvious peak of the oxygen density profile appearing in the first water layer. This result reveals that, in this case, the external force applied to water molecules from the CO/Pt(111) surface almost vanishes as a result of the competitive adsorption between CO and water molecules on the Pt(111) surface. This coverage is also the critical point of the wetting/non-wetting conditions for the CO/Pt(111) surface. Averaged work function and adsorption energy from current simulations are consistent with those of previous studies, which show that thermal average is required for direct comparisons between theoretical predictions and experimental measurements. Meanwhile, the statistical behaviors of work function and adsorption energy at room temperature have also been calculated. The standard errors of the calculated work function for the water-CO/Pt(111) interfaces are around 0.6 eV at all CO coverages, while the standard error decreases from 1.29 to 0.05 eV as the CO coverage increases from 4% to 100% for the calculated adsorption energy. Moreover, the critical points for these electronic properties are the same as those for the wetting/non-wetting conditions. These findings provide a better understanding about the interfacial structure under specific adsorption conditions, which can have important applications on the structure of electric double layers and therefore offer a useful perspective for the design of the electrochemical catalysts.

Enhanced room temperature ferromagnetism in Ni doped SnO2 nanoparticles: A comprehensive study

NASA Astrophysics Data System (ADS)

Ahmed, Ateeq; Ali, T.; Naseem Siddique, M.; Ahmad, Abid; Tripathi, P.

2017-08-01

We emphasized on a detailed investigation of the structural, optical, and magnetic properties of pure and Ni-doped SnO2 nanoparticles (NPs) synthesized by a sol-gel process. An extensive structural study has been carried out using various characterization techniques. The X-ray Diffraction (XRD) spectra show the formation of the single phase tetragonal structure of pure and Ni-doped SnO2 NPs without any noticeable impurity phase such as NiO. XRD results indicate that the crystallite size of SnO2 is found to be decreased with Ni doping, which has also been confirmed by the Field Emission Scanning Electron Microscopy study. X-ray Photoelectron Spectroscopy (XPS) measurements displayed a clear sign for Ni2+ ions occupying the lattice sites of Sn4+ in the SnO2 host which also gives clear evidence for the formation of single phase Sn1-xNixO2 NPs. The optical analysis shows a significant decrease in the energy gap of SnO2, i.e., (from 3.71 eV to 3.28 eV) as Ni concentration increases which may be correlated with the core level valence band XPS analysis. Photoluminescence studies show that Ni doping creates oxygen vacancies due to dissimilar ionic radii of Ni2+ and Sn4+. Superconducting quantum interference device measurements revealed that the Ni doped SnO2 NPs exhibit strong ferromagnetic behavior at room temperature and this analysis has been well fitted with a simple relationship to find out magnetic parameters proposed by Stearns and Cheng et al. Hence, our results demonstrate that Ni-doping has strong impact on the structural, optical, and magnetic properties.

Viral chimeras decrypt the role of enterovirus capsid proteins in viral tropism, acid sensitivity and optimal growth temperature

PubMed Central

Royston, Léna; Essaidi-Laziosi, Manel; Piuz, Isabelle; Geiser, Johan; Huang, Song; Kaiser, Laurent; Garcin, Dominique

2018-01-01

Despite their genetic similarities, enteric and respiratory enteroviruses (EVs) have highly heterogeneous biophysical properties and cause a vast diversity of human pathologies. In vitro differences include acid sensitivity, optimal growth temperature and tissue tropism, which reflect a preferential in vivo replication in the respiratory or gastrointestinal tract and are thus key determinants of EV virulence. To investigate the underlying cause of these differences, we generated chimeras at the capsid-level between EV-D68 (a respiratory EV) and EV-D94 (an enteric EV). Although some chimeras were nonfunctional, EV-D94 with both the capsid and 2A protease or the capsid only of EV-D68 were both viable. Using this latter construct, we performed several functional assays, which indicated that capsid proteins determine acid sensitivity and tropism in cell lines and in respiratory, intestinal and neural tissues. Additionally, capsid genes were shown to also participate in determining the optimal growth temperature, since EV-D94 temperature adaptation relied on single mutations in VP1, while constructs with EV-D68 capsid could not adapt to higher temperatures. Finally, we demonstrate that EV-D68 maintains residual binding-capacity after acid-treatment despite a loss of infectivity. In contrast, non-structural rather than capsid proteins modulate the innate immune response in tissues. These unique biophysical insights expose another layer in the phenotypic diversity of one of world’s most prevalent pathogens and could aid target selection for vaccine or antiviral development. PMID:29630666

Auger electron diffraction study of V/Fe(100) interface formation

NASA Astrophysics Data System (ADS)

Huttel, Y.; Avila, J.; Asensio, M. C.; Bencok, P.; Richter, C.; Ilakovac, V.; Heckmann, O.; Hricovini, K.

1998-05-01

Vanadium atoms present a magnetic moment different to zero when they are part of a thin film deposited on Fe or as a bimetallic Fe-V alloy. The understanding of this phenomenon can only be achieved with a correct structural description of these types of systems. We report an Auger electron diffraction investigation of V films grown on body cubic centred (b.c.c.) Fe(100) substrates. Angular-scanned Auger electron diffraction (AED) patterns of V L 23M 23M 4 (473 eV) and Fe L 3VV (703 eV) show the formation of a well-ordered V/Fe interface even at room temperature. The AED patterns of V films in the range of vanadium submonolayer provide evidence of an isotropic Auger emission, indicating the absence of interdiffusion of V atoms into the Fe substrate and absence of cluster growth of the V film. The annealing of these films up to 400°C does not activate the substitution of the topmost Fe surface layers by V atoms.

The preparation of BP single crystals by high pressure flux method

NASA Technical Reports Server (NTRS)

Kumashiro, Y.; Misawa, S.; Gonda, S.

1984-01-01

Single crystals of BP, a III-V compound semiconductor, were obtained by the high pressure flux method. Cu3P and Ni12P5 powders were used as the flux, and mixed with BP powder. Two kinds of mixtures were prepared: (1) 1.8g (BP) + 35 G (Cu3P) and (2) 1.7 g (BP) + 25 g (Ni12P5). They were compressed into pellets, heated at 1300 C for 24 h in an induction furnace under a pressure of 1 MPa using Ar-P2 gas, and slowly cooled to room temperature. In case (1), BP single crystals grew along the (III) plane, and in case (2) they grew as an aggregate of crystallites. The cathodoluminescence spectra of the synthetic BP crystals showed peaks near 680 nm (1.82 eV) for case (1), and 500 nm (2.47 eV) for case (2). By using the high pressure flux method conventional sized crystals were obtained in a relatively short time.

Formation of copper precipitates in silicon

NASA Astrophysics Data System (ADS)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

Transformation from insulating p-type to semiconducting n-type conduction in CaCu3Ti4O12-related Na(Cu5/2Ti1/2)Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Li, Ming; Sinclair, Derek C.

2013-07-01

A double doping mechanism of Na+ + 1/2 Ti4+ → Ca2+ + 1/2 Cu2+ on the general formula Ca1-xNax(Cu3-x/2Tix/2)Ti4O12 has been used to prepare a series of isostructural CaCu3Ti4O12 (CCTO)-type perovskites. A complete solid solution exists for 0 ≤ x ≤ 1 and all compositions exhibit incipient ferroelectric behaviour with higher than expected intrinsic relative permittivity. Although CCTO ceramics typically exhibit n-type semiconductivity (room temperature, RT, resistivity of ˜10-100 Ω cm), Na(Cu5/2Ti1/2)Ti4O12 (NCTO) ceramics sintered at 950 °C consist of two insulating bulk phases (RT resistivity > 1 GΩ cm), one p-type and the other n-type. With increasing sintering temperature/period, the p-type phase transforms into the n-type phase. During the transformation, the resistivity and activation energy for electrical conduction (Ea ˜ 1.0 eV) of the p-type phase remain unchanged, whereas the n-type phase becomes increasingly conductive with Ea decreasing from ˜ 0.71 to 0.11 eV with increasing sintering temperature. These changes are attributed to small variations in stoichiometry that occur during high temperature ceramic processing with oxygen-loss playing a crucial role.

Effects of oxygen partial pressure, deposition temperature, and annealing on the optical response of CdS:O thin films as studied by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Junda, Maxwell M.; Grice, Corey R.; Subedi, Indra; Yan, Yanfa; Podraza, Nikolas J.

2016-07-01

Ex-situ spectroscopic ellipsometry measurements are made on radio frequency magnetron sputtered oxygenated cadmium sulfide (CdS:O) thin films. Films are deposited onto glass substrates at room temperature and at 270 °C with varying oxygen to total gas flow ratios in the sputtering ambient. Ellipsometric spectra from 0.74 to 5.89 eV are collected before and after annealing at 607 °C to simulate the thermal processes during close-space sublimation of overlying cadmium telluride in that solar cell configuration. Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are extracted for films as a function of oxygen gas flow ratio, deposition temperature, and post-deposition annealing using a parametric model accounting for critical point transitions and an Urbach tail for sub-band gap absorption. The results suggest an inverse relationship between degree of crystallinity and oxygen gas flow ratio, whereas annealing is shown to increase crystallinity in all samples. Direct band gap energies are determined from the parametric modeling of ɛ and linear extrapolations of the square of the absorption coefficient. As-deposited samples feature a range of band gap energies whereas annealing is shown to result in gap energies ranging only from 2.40 to 2.45 eV, which is close to typical band gaps for pure cadmium sulfide.

The Evolution of School Washrooms and Locker Rooms: Design and Product Selection for Today's Challenges.

ERIC Educational Resources Information Center

Jagelski, Phil

2002-01-01

Discusses the latest in school restroom and locker room design, such as wash facilities in outside corridors, infrared water control, repositioned mirrors, plastic lockers and benches, and multiple-head showers. These innovations are designed to address cost, maintenance, and security concerns. (EV)

Solid-Liquid Lithium Electrolyte Nanocomposites Derived from Porous Molecular Cages.

PubMed

Petronico, Aaron; Moneypenny, Timothy P; Nicolau, Bruno G; Moore, Jeffrey S; Nuzzo, Ralph G; Gewirth, Andrew A

2018-06-20

We demonstrate that solid-liquid nanocomposites derived from porous organic cages are effective lithium ion electrolytes at room temperature. A solid-liquid electrolyte nanocomposite (SLEN) fabricated from a LiTFSI/DME electrolyte system and a porous organic cage exhibits ionic conductivity on the order of 1 × 10 -3 S cm -1 . With an experimentally measured activation barrier of 0.16 eV, this composite is characterized as a superionic conductor. Furthermore, the SLEN displays excellent oxidative stability up to 4.7 V vs Li/Li + . This simple three-component system enables the rational design of electrolytes from tunable discrete molecular architectures.

Oxidation of silicon with a 5 eV O(-) beam

NASA Technical Reports Server (NTRS)

Hecht, M. H.; Orient, O. J.; Chutjian, A.; Vasquez, R. P.

1989-01-01

A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

Improving the work function of the niobium surface of SRF cavities by plasma processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyagi, P. V.; Doleans, M.; Hannah, B.

2016-01-01

An in situ plasma processing technique using chemically reactive oxygen plasma to remove hydrocarbons from superconducting radio frequency cavity surfaces at room temperature was developed at the spallation neutron source, at Oak Ridge National Laboratory. To understand better the interaction between the plasma and niobium surface, surface studies on small samples were performed. In this article, we report the results from those surface studies. The results show that plasma processing removes hydrocarbons from top surface and improves the surface work function by 0.5₋1.0 eV. Improving the work function of RF surface of cavities can help to improve their operational performance.

Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation

NASA Astrophysics Data System (ADS)

Goodman, S. A.; Auret, F. D.; Meyer, W. E.

1994-01-01

Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm-3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS ``signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.

Optical conductivity of alpha-Mn

NASA Technical Reports Server (NTRS)

Scoles, K. J.; Christy, R. W.

1982-01-01

The optical constants were measured at room temperature in the photon-energy range 0.6 to 6.5 eV on evaporated thin films. Evaporation conditions were chosen that gave the alpha-Mn crystal structure with reasonably large grains. The optical conductivity was separated into intraband and interband contributions by fitting to the Drude formula at low energies. The results are anomalous in comparison to other 3d transition metals. The free-electron lifetime is exceptionally sort (in agreement with the large dc resistivity of Mn), and the interband transitions seem unusually weak at the lower energies. Possible explanations related to the complicated crystal structure of alpha-Mn are discussed.

An Exceptionally Narrow Band-Gap (∼4 eV) Silicate Predicted in the Cubic Perovskite Structure: BaSiO3.

PubMed

Hiramatsu, Hidenori; Yusa, Hitoshi; Igarashi, Ryo; Ohishi, Yasuo; Kamiya, Toshio; Hosono, Hideo

2017-09-05

The electronic structures of 35 A 2+ B 4+ O 3 ternary cubic perovskite oxides, including their hypothetical chemical compositions, were calculated by a hybrid functional method with the expectation that peculiar electronic structures and unique carrier transport properties suitable for semiconductor applications would be hidden in high-symmetry cubic perovskite oxides. We found unique electronic structures of Si-based oxides (A = Mg, Ca, Sr, and Ba, and B = Si). In particular, the unreported cubic BaSiO 3 has a very narrow band gap (4.1 eV) compared with conventional nontransition-metal silicates (e.g., ∼9 eV for SiO 2 and the calculated value of 7.3 eV for orthorhombic BaSiO 3 ) and a small electron effective mass (0.3m 0 , where m 0 is the free electron rest mass). The narrow band gap is ascribed to the nonbonding state of Si 3s and the weakened Madelung potential. The existence of the predicted cubic perovskite structure of BaSiO 3 was experimentally verified by applying a high pressure of 141 GPa. The present finding indicates that it could be possible to develop a new transparent oxide semiconductor of earth abundant silicates if the symmetry of its crystal structure is appropriately chosen. Cubic BaSiO 3 is a candidate for high-performance oxide semiconductors if this phase can be stabilized at room temperature and ambient pressure.

Room-temperature ferromagnetic Zn1- x Ni x S nanoparticles

NASA Astrophysics Data System (ADS)

Kunapalli, Chaitanya Kumar; Shaik, Kaleemulla

2018-05-01

Nickel-doped zinc sulfide nanoparticles (Zn1- x Ni x S) at x = 0.00, 0.02, 0.05, 0.08 and 0.10 were synthesized by solid-state reaction. The (nickel sulfide) NiS and (zinc sulfide) ZnS nanoparticles in desired ratios were taken, mixed and ground for 6 h at a speed rate of 300 rpm using a planetary ball mill. The milled nanoparticles were sintered at 600 °C for 8 h using a high-temperature vacuum furnace. The structural, optical, luminescence and magnetic properties of the Zn1- x Ni x S nanoparticles were characterized by powder X-ray diffraction (XRD), UV-Vis-NIR diffuse reflectance spectroscopy, photoluminescence (PL) spectroscopy and vibrating sample magnetometer (VSM). No change in crystal structure was observed from XRD by substitution of Ni into ZnS lattice. The mean crystallite size was found to be 37 nm. The band gap of Zn1- x Ni x S nanoparticles decreased from 3.57 to 3.37 eV on increasing the dopant concentration. The room-temperature photoluminescence (PL) spectra of Zn1- x Ni x S nanoparticles showed two broad and intense emission peaks at 420 and 438 nm with excitation wavelength of 330 nm. The Zn1- x Ni x S nanoparticles showed ferromagnetism at 100 K and at room temperature (300 K) and also the strength of magnetization increased with Ni concentration. The maximum magnetization value of 0.18 emu/g was observed for x = 0.10 at 100 K. The strength of the magnetization observed at 100 K was higher than that of magnetization observed at 300 K.

The formation of organic (propolis films)/inorganic (layered crystals) interfaces for optoelectronic applications

NASA Astrophysics Data System (ADS)

Drapak, S. I.; Bakhtinov, A. P.; Gavrylyuk, S. V.; Kovalyuk, Z. D.; Lytvyn, O. S.

2008-10-01

Propolis (honeybee glue) organic films were prepared from an alcoholic solution on the surfaces of inorganic layered semiconductors (indium, gallium and bismuth selenides). Atomic force microscopy (AFM) and X-ray diffraction (XRD) are used to characterize structural properties of an organic/inorganic interfaces. It is shown that nanodimensional linear defects and nanodimensional cavities of various shapes are formed on the van der Waals (VDW) surfaces of layered crystals as a result of chemical interaction between the components of propolis (flavonoids, aminoacids and phenolic acids) and the VDW surfaces as well as deformation interaction between the VDW surfaces and propolis films during their polymerization. The nanocavities are formed as a result of the rupture of strong covalent bonds in the upper layers of layered crystals and have the shape of hexagons or triangles in the (0001) plane. The shape, lateral size and distribution of nanodimensional defects on the VDW surfaces depends on the type of crystals, the magnitude and distribution of surface stresses. We have obtained self-organized nanofold structures of propolis/InSe interface. It is established that such heterostructures have photosensitivity in the infrared range hν<1.2 eV (the values of energy gap are 1.2 eV for InSe and 3.07 eV for propolis films at room temperature).

Decay of the electron number density in the nitrogen afterglow using a hairpin resonator probe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siefert, Nicholas S.; Ganguly, Biswa N.; Sands, Brian L.

A hairpin resonator was used to measure the electron number density in the afterglow of a nitrogen glow discharge (p=0.25-0.75 Torr). Electron number densities were measured using a time-dependent approach similar to the approach used by Spencer et al. [J. Phys. D 20, 923 (1987)]. The decay time of the electron number density was used to determine the electron temperature in the afterglow, assuming a loss of electrons via ambipolar diffusion to the walls. The electron temperature in the near afterglow remained between 0.4 and 0.6 eV, depending on pressure. This confirms the work by Guerra et al. [IEEE Trans.more » Plasma. Sci. 31, 542 (2003)], who demonstrated experimentally and numerically that the electron temperature stays significantly above room temperature via superelastic collisions with highly vibrationally excited ground state molecules and metastables, such as A {sup 3}{sigma}{sub u}{sup +}.« less

Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

2013-12-01

We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

On the use of bismuth as a neutron filter

NASA Astrophysics Data System (ADS)

Adib, M.; Kilany, M.

2003-02-01

A formula is given which, for neutron energies in the range 10 -4< E<10 eV, permits calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of bismuth temperature and crystalline form. Computer programs have been developed which allow calculations for the Bi rhombohedral structure in its poly-crystalline form and its equivalent hexagonal close-packed structure. The calculated total neutron cross-sections for poly-crystalline Bi at different temperatures were compared with the measured values. An overall agreement is indicated between the formula fits and experimental data. Agreement was also obtained for values of Bi-single crystals, at room and liquid nitrogen temperatures. A feasibility study for use of Bi in powdered form, as a cold neutron filter, is detailed in terms of the optimum Bi-single crystal thickness, mosaic spread, temperature and cutting plane for efficient transmission of thermal-reactor neutrons, and also for rejection of the accompanying fast neutrons and gamma rays.

My Friend Ilan Gur Ze'Ev

ERIC Educational Resources Information Center

Tubbs, Nigel

2018-01-01

Ilan Gur Ze'ev gave his last lecture on January 4, 2012, in room 363 in the Haifa University's Faculty of Education. Ilan passed away on the morning of January 5, 2012 at the Italian Hospital in Haifa. In this last lecture given to friends, colleagues and students he said 'The challenge is to counter immersion of ourselves in the fashionable and…

Robust red-emission spectra and yields in firefly bioluminescence against temperature changes

NASA Astrophysics Data System (ADS)

Mochizuki, Toshimitsu; Wang, Yu; Hiyama, Miyabi; Akiyama, Hidefumi

2014-05-01

We measured the quantitative spectra of firefly (Photinus pyralis) bioluminescence at various temperatures to investigate the temperature dependence of the luciferin-luciferase reaction at 15-34 °C. The quantitative spectra were decomposed very well into red (1.9 eV), orange (2.0 eV), and green (2.2 eV) Gaussian components. The intensity of the green component was the only temperature sensitive quantity that linearly decreased as the temperature increased at pH 7 and 8. We found the quantitative bioluminescence spectra to be robust below 2.0 eV against temperature and other experimental conditions. The revealed robustness of the red emissions should be useful for quantitative applications such as adenosine-5'-triphosphate detection.

Photoelectron spectroscopic studies of ultra-thin CuPc layers on a Si(111)-(√3 × √3)R30°-B surface

NASA Astrophysics Data System (ADS)

Menzli, S.; Laribi, A.; Mrezguia, H.; Arbi, I.; Akremi, A.; Chefi, C.; Chérioux, F.; Palmino, F.

2016-12-01

The adsorption of copper phthalocyanine (CuPc) molecules on Si(111)-(√3 × √3)R30°-B surface is investigated at room temperature under ultra-high vacuum. Crystallographic, chemical and electronic properties of the interface are investigated by low energy electron diffraction (LEED), ultraviolet and X-ray photoemission spectroscopies (UPS, XPS) and X-ray photoemission diffraction (XPD). LEED and XPD results shed light on the growth mechanism of CuPc on this substrate. At one monolayer coverage the growth mode was characterized by the formation of crystalline 3D nanoislands. The molecular packing deduced from this study appears very close to the one of the bulk CuPc α phase. The 3D islands are formed by molecules aligned in a standing manner. XPS core level spectra of the substrate reveal that there is no discernible chemical interaction between molecules and substrate. However there is charge transfer from molecules to the substrate. During the growth, the work function (WF) was found to decrease from 4.50 eV for the clean substrate to 3.70 eV for the highest coverage (30 monolayers). Within a thickness of two monolayers deposition, an interface dipole of 0.50 eV was found. A substrate band bending of 0.25 eV was deduced over all the range of exposure. UPS spectra indicate the existence of a band bending of the highest occupied molecular orbital (HOMO) of 0.30 eV. The changes in the work function, in the Fermi level position and in the onset of the molecular HOMO state have been used to determine the energy level alignment at the interface.

Magnetic and dielectric study of Fe-doped CdSe nanoparticles

NASA Astrophysics Data System (ADS)

Das, Sayantani; Banerjee, Sourish; Bandyopadhyay, Sudipta; Sinha, Tripurari Prasad

2018-01-01

Nanoparticles of cadmium selenide (CdSe) and Fe (5% and 10%) doped CdSe have been synthesized by soft chemical route and found to have cubic structure. The magnetic field dependent magnetization measurement of the doped samples indicates the presence of anti-ferromagnetic order. The temperature dependent magnetization (M-T) measurement under zero field cooled and field cooled conditions has also ruled out the presence of ferromagnetic component in the samples at room temperature as well as low temperature. In order to estimate the anti-ferromagnetic coupling among the doped Fe atoms, an M-T measurement at 500 Oe has been carried out, and the Curie-Weiss temperature θ of the samples has been estimated from the inverse of susceptibility versus temperature plots. The dielectric relaxation peaks are observed in the spectra of imaginary part of dielectric constant. The temperature dependent relaxation time is found to obey the Arrhenius law having activation energy 0.4 eV for Fe doped samples. The frequency dependent conductivity spectra are found to obey the power law. [Figure not available: see fulltext.

A Crystal-Physical Model of Electrotransfer in the Superionic Conductor Pb1 - x Sc x F2 + x ( x = 0.1)

NASA Astrophysics Data System (ADS)

Sorokin, N. I.

2018-04-01

The frequency (ν = 10-1-107 Hz) dependences of electrical conductivity σ(ν) of single crystals of superionic conductor Pb0.9Sc0.1F2.1 (10 mol % ScF3) with fluorite type structure (CaF2) in the temperature range 153-410 K have been investigated. The static bulk conductivity σ dc =1.5 × 10-4 S/cm and average hopping frequency ν h = 1.5 × 107 Hz of charge carriers (mobile ions F-) at room temperature (293 K) have been defined from the σ dc (ν) experimental curves. Enthalpies of thermoactivated processes of ionic conductivity σ dc ( T) (Δ H σ = 0.393 ± 0.005 eV) and dielectric relaxation ν h ( T) (Δ H h = 0.37 ± 0.03 eV) coincide within their errors. A crystal-physical model of fluorine-ion transport in a Pb0.9Sc0.1F2.1 crystal lattice has been proposed. The characteristic parameters of charge carriers have been calculated: concentration n mob = 2.0 × 1021 cm-3, the distance of the hopping d ≈ 0.5 nm and mobility μmob = 4.5 × 10-7 cm2/s V (293 K).

Wide range scaling laws for radiation driven shock speed, wall albedo and ablation parameters for high-Z materials

NASA Astrophysics Data System (ADS)

Mishra, Gaurav; Ghosh, Karabi; Ray, Aditi; Gupta, N. K.

2018-06-01

Radiation hydrodynamic (RHD) simulations for four different potential high-Z hohlraum materials, namely Tungsten (W), Gold (Au), Lead (Pb), and Uranium (U) are performed in order to investigate their performance with respect to x-ray absorption, re-emission and ablation properties, when irradiated by constant temperature drives. A universal functional form is derived for estimating time dependent wall albedo for high-Z materials. Among the high-Z materials studied, it is observed that for a fixed simulation time the albedo is maximum for Au below 250 eV, whereas it is maximum for U above 250 eV. New scaling laws for shock speed vs drive temperature, applicable over a wide temperature range of 100 eV to 500 eV, are proposed based on the physics of x-ray driven stationary ablation. The resulting scaling relation for a reference material Aluminium (Al), shows good agreement with that of Kauffman's power law for temperatures ranging from 100 eV to 275 eV. New scaling relations are also obtained for temperature dependent mass ablation rate and ablation pressure, through RHD simulation. Finally, our study reveals that for temperatures above 250 eV, U serves as a better hohlraum material since it offers maximum re-emission for x-rays along with comparable mass ablation rate. Nevertheless, traditional choice, Au works well for temperatures below 250 eV. Besides inertial confinement fusion (ICF), the new scaling relations may find its application in view-factor codes, which generally ignore atomic physics calculations of opacities and emissivities, details of laser-plasma interaction and hydrodynamic motions.

Synthesis aspects, structural, spectroscopic, antimicrobial and room temperature ferromagnetism of zinc iodide complex with Schiff based ligand

NASA Astrophysics Data System (ADS)

Shakila, K.; Kalainathan, S.

2015-01-01

In this paper, we report the successful growth of complex compound of zinc iodide with thiocarbamide by slow evaporation method. The single crystal XRD study reveals that the crystal belongs to monoclinic system with centrosymmetric space group and powder XRD analysis shows that the perfect crystalline nature of the crystal. The presence of functional group and element were confirmed from FT-IR and EDAX analysis. Optical absorbance of the grown crystal was studied by UV-Vis spectrophotometer. The optical constants were calculated from the optical absorbance data such as refractive index (n), extinction coefficient (K) and reflectance (R). The optical band gap (Eg) of thiocarbamide zinc iodide crystal is 4.22 eV. The magnetic properties of grown crystal have been determined by Vibrating Sample Magnetometry (VSM). Room temperature magnetization revealed a ferromagnetic behaviour for the grown crystal. The antibacterial and antifungal activities of the title compound were performed by well diffusion method and MIC method against the standard bacteria like Staphylococcus aureus, Escherichia coli, Klebsiella pneumonia and against fungus like Aspergillus niger, Rhizopus sps and Penicillium sps. Thermal behaviour of the crystal has been investigated using thermogravimetric analysis (TGA) and differential thermal analysis (DTA).

Itinerant Antiferromagnetism in RuO 2

DOE PAGES

Berlijn, Tom; Snijders, Paul C.; Delaire, Oliver A.; ...

2017-02-15

Bulk rutile RuO 2 has long been considered a Pauli paramagnet. Here, in this article, we report that RuO 2 exhibits a hitherto undetected lattice distortion below approximately 900 K. The distortion is accompanied by antiferromagnetic order up to at least 300 K with a small room temperature magnetic moment of approximately 0.05μ B as evidenced by polarized neutron diffraction. Density functional theory plus U(DFT+U) calculations indicate that antiferromagnetism is favored even for small values of the Hubbard U of the order of 1 eV. The antiferromagnetism may be traced to a Fermi surface instability, lifting the band degeneracy imposedmore » by the rutile crystal field. The combination of high Néel temperature and small itinerant moments make RuO 2 unique among ruthenate compounds and among oxide materials in general.« less

Broadband dielectric response of CaCu3Ti4O12 : From dc to the electronic transition regime

NASA Astrophysics Data System (ADS)

Kant, Ch.; Rudolf, T.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.; Loidl, A.

2008-01-01

We report on phonon properties and electronic transitions in CaCu3Ti4O12 , a material which reveals a colossal dielectric constant at room temperature without any ferroelectric transition. The results of far- and midinfrared measurements are compared to those obtained by broadband dielectric and millimeter-wave spectroscopy on the same single crystal. The unusual temperature dependence of phonon eigenfrequencies, dampings, and ionic plasma frequencies of low-lying phonon modes is analyzed and discussed in detail. Electronic excitations below 4eV are identified as transitions between full and empty hybridized oxygen-copper bands and between oxygen-copper and unoccupied Ti3d bands. The unusually small band gap determined from the dc conductivity (˜200meV) compares well with the optical results.

On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Medvedev, O. S., E-mail: o.s.medvedev@spbu.ru; Vyvenko, O. F.; Bondarenko, A. S.

2015-09-15

Using scanning electron microscopy in the cathodoluminescence mode, it is shown that straight segments of a-screw dislocations introduced by plastic deformation at room temperature into unintentionally doped low-resistance gallium nitride luminesce in the spectral range 3.1–3.2 eV at 70 K. The spectral composition of dislocation luminescence shows a fine doublet structure with a component width of ∼15 meV and splitting of ∼30 meV, accompanied by LO-phonon replicas. Luminescent screw dislocations move upon exposure to an electron beam and at low temperatures, but retain immobility for a long time without external excitation. Optical transitions involving the quantum-well states of a stackingmore » fault in a split-dislocation core are considered to be the most probable mechanism of the observed phenomenon.« less

Sodium ion conducting polymer electrolyte membrane prepared by phase inversion technique

NASA Astrophysics Data System (ADS)

Harshlata, Mishra, Kuldeep; Rai, D. K.

2018-04-01

A mechanically stable porous polymer membrane of Poly(vinylidene fluoride-hexafluoropropylene) has been prepared by phase inversion technique using steam as a non-solvent. The membrane possesses semicrystalline network with enhanced amorphicity as observed by X-ray diffraction. The membrane has been soaked in an electrolyte solution of 0.5M NaPF6 in Ethylene Carbonate/Propylene Carbonate (1:1) to obtain the gel polymer electrolyte. The porosity and electrolyte uptake of the membrane have been found to be 67% and 220% respectively. The room temperature ionic conductivity of the membrane has been obtained as ˜ 0.3 mS cm-1. The conductivity follows Arrhenius behavior with temperature and gives activation energy as 0.8 eV. The membrane has been found to possess significantly large electrochemical stability window of 5.0 V.

Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

DOEpatents

Hoffbauer, Mark A.; Prettyman, Thomas H.

2001-01-01

Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

Dielectric Relaxation Behavior and AC Electrical Conductivity Study of 2-(1,2-Dihydro-7-Methyl-2-Oxoquinoline-5-yl) Malononitrile (DMOQMN)

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; El-Zaidia, E. F. M.; Darwish, A. A. A.; Salem, G. F.

2017-02-01

Dielectric relaxation and alternative current conductivity of a new organic compound 2-(1,2-dihydro-7-methyl-2-oxoquinoline-5-yl) malononitrile (DMOQMN) have been investigated. X-ray diffraction (XRD) at room temperature reveals that DMOQMN samples have a polycrystalline structure of the triclinic system. The analysis of the dielectric constant and dielectric loss index suggested the dominant polarization is performed and the Maxwell-Wagner-Sillar type polarization is dominating at low frequency and high temperature. These results have been confirmed by the XRD and dielectric modulus. The estimated relaxation time and the activation energy are 9 × 10-13 s and 0.43 eV, respectively. Our results indicated that the conduction mechanism of DMOQMN is controlled by the correlation barrier hopping (CBH) model.

Observation of the effects of stronger magnetic fields on warm, higher energy electrons and ion beams transiting a double layer in a helicon plasma

NASA Astrophysics Data System (ADS)

Scharer, John; Sung, Yung-Ta; Li, Yan

2017-10-01

Fast, two-temperature electrons (>80 eV, Te =13 eV tail, 4 eV bulk) with substantial tail density fractions are created at low (< = 1.7 mtorr) Ar pressure @ 340 G in the antenna region with nozzle mirror ratio of 1.4 on MadHeX @ 900W. These distributions including a fast tail are observed upstream of a double layer. The fast, untrapped tail electrons measured downstream of the double layer have a higher temperature of 13 eV than the trapped, upstream electrons of 4 eV temperature. Upstream plasma potential fluctuations of + - 30 percent are observed. An RF-compensated Langmuir probe is used to measure the electron temperatures and densities and OES, mm wave IF and an RPA for the IEDF are also utilized. As the magnetic field is increased to 1020 G, an increase in the electron temperature and density upstream of the double layer is observed with Te= 15-25 eV with a primarily single temperature mode. Accelerated ion beam energies in the range of 65-120 eV are observed as the magnetic field is increased from 340 to 850 G. The role of the nozzle, plasma double layer and helicon wave coupling on the EEDF and ion acceleration will be discussed. Research supported in part by the University of Wisconsin.

Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Kadaoui, Mustapha Amine; Bouiadjra, Wadi Bachir; Saidane, Abdelkader; Belahsene, Sofiane; Ramdane, Abderrahim

2015-06-01

Electrical properties of Si-doped GaN epitaxial layers, grown on a c-plane sapphire substrate by MOCVD to form Schottky diodes with Gold (Au) and platinum (Pt) and using Ti/Al/Au as Ohmic contact, are investigated. Characterization was performed through I-V and C-V-f measurements at room temperature. Schottky barrier height (Φb), ideality factor (n), and series resistance (Rs) were extracted from forward I-V characteriztics using Cheung and Lien methods. Φb, doping concentration (Nd) and Rs frequency dependence were extracted from C-V-f characteriztics. Pt/n-GaN shows a non-linear behavior with a barrier height of 0.63 eV, an ideality factor of 2.3, and series resistance of 63 Ω. Au/n-GaN behaves like two diodes in parallel with two barrier heights of (0.83 and 0.9 eV), two ideality factors of (5.8 and 3.18) and two series resistance of (10.6 and 68 Ω). Interface state properties in both samples have been investigated taking into account the bias dependence of the effective barrier height. The amount of stimulated traps along the energy-gap at the interface increases with voltage bias, which increases NSS exponentially from 4.24 ṡ 1013 to 3.67 ṡ 1014 eV-1 cm-2 in the range (Ec - 0.17) to (Ec - 0.61) eV for Pt/n-GaN, and from 2.3 ṡ 1013 to 1.14 ṡ 1014 eV-1 cm-2, in the range (Ec - 0.31) to (Ec - 0.82) eV for Au/n-GaN. The values of interface states density and series resistance for both samples are found to decrease with increasing frequency. Peak intensity was a measure of active interface states. C-V-f results confirm the model of the Schottky diode with a native interfacial insulator layer along the space charge region.

In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment

NASA Astrophysics Data System (ADS)

Chen, Chang Pang; Ong, Bin Leong; Ong, Sheau Wei; Ong, Weijie; Tan, Hui Ru; Chai, Jian Wei; Zhang, Zheng; Wang, Shi Jie; Pan, Ji Sheng; Harrison, Leslie John; Kang, Hway Chuan; Tok, Eng Soon

2017-10-01

Room temperature growth of HfO2 thin film on clean 2H-MoS2 via plasma-sputtering of Hf-metal target in an argon/oxygen environment was studied in-situ using x-ray photoelectron spectroscopy (XPS). The deposited film was observed to grow akin to a layer-by-layer growth mode. At the onset of growth, a mixture of sulfate- and sulfite-like species (SOx2- where x = 3, 4), and molybdenum trioxide (MoO3), are formed at the HfO2/MoS2 interface. An initial decrease in binding energies for both Mo 3d and S 2p core-levels of the MoS2 substrate by 0.4 eV was also observed. Their binding energies, however, did not change further with increasing HfO2 thickness. There was no observable change in the Hf4f core-level binding energy throughout the deposition process. With increasing HfO2 deposition, MoO3 becomes buried at the interface while SOx2- was observed to be present in the film. The shift of 0.4 eV for both Mo 3d and S 2p core-levels of the MoS2 substrate can be attributed to a charge transfer from the substrate to the MoO3/SOx2--like interface layer. Consequently, the Type I heterojunction valence band offset (conduction band offset) becomes 1.7 eV (2.9 eV) instead of 1.3 eV (3.3 eV) expected from considering the bulk HfO2 and MoS2 valence band offset (conduction band offset). The formation of these states and its influence on band offsets will need to be considered in their device applications.

Synthesis of Nanocrystalline CaWO4 as Low-Temperature Co-fired Ceramic Material: Processing, Structural and Physical Properties

NASA Astrophysics Data System (ADS)

Vidya, S.; Solomon, Sam; Thomas, J. K.

2013-01-01

Nanocrystalline scheelite CaWO4, a promising material for low-temperature co-fired ceramic (LTCC) applications, has been successfully synthesized through a single-step autoignition combustion route. Structural analysis of the sample was performed by powder x-ray diffraction (XRD), Fourier-transform infrared spectroscopy, and Raman spectroscopy. The XRD analysis revealed that the as-prepared sample was single phase with scheelite tetragonal structure. The basic optical properties and optical constants of the CaWO4 nanopowder were studied using ultraviolet (UV)-visible absorption spectroscopy, which showed that the material was a wide-bandgap semiconductor with bandgap of 4.7 eV at room temperature. The sample showed poor transmittance in the ultraviolet region but maximum transmission in the visible/near-infrared regions. The photoluminescence spectra recorded at different temperatures showed intense emission in the green region. The particle size estimated from transmission electron microscopy was 23 nm. The feasibility of CaWO4 for LTCC applications was studied from its sintering behavior. The sample was sintered at a relatively low temperature of 810°C to high density, without using any sintering aid. The surface morphology of the sintered sample was analyzed by scanning electron microscopy. The dielectric constant and loss factor of the sample measured at 5 MHz were found to be 10.50 and 1.56 × 10-3 at room temperature. The temperature coefficient of the dielectric constant was -88.71 ppm/°C. The experimental results obtained in this work demonstrate the potential of nano-CaWO4 as a low-temperature co-fired ceramic as well as an excellent luminescent material.

Radiation-induced amorphization of Ce-doped Mg2Y8(SiO4)6O2 silicate apatite

NASA Astrophysics Data System (ADS)

Zhou, Jianren; Yao, Tiankai; Lian, Jie; Shen, Yiqiang; Dong, Zhili; Lu, Fengyuan

2016-07-01

Ce-doped Mg2Y8(SiO4)6O2 silicate apatite (Ce = 0.05 and 0.5) were irradiated with 1 MeV Kr2+ ion beam irradiation at different temperatures and their radiation response and the cation composition dependence of the radiation-induced amorphization were studied by in situ TEM. The two Ce-doped Mg2Y8(SiO4)6O2 silicate apatites are sensitive to ion beam induced amorphization with a low critical dose (0.096 dpa) at room temperature, and exhibits significantly different radiation tolerance at elevated temperatures. Ce concentration at the apatite AI site plays a critical role in determining the radiation response of this silicate apatite, in which the Ce3+ rich Mg2Y7.5Ce0.5(SiO4)6O2 displays lower amorphization susceptibility than Mg2Y7.95Ce0.05(SiO4)6O2 with a lower Ce3+ occupancy at the AI sites. The critical temperature (Tc) and activation energy (Ea) change from 667.5 ± 33 K and 0.162 eV of Mg2Y7.5Ce0.5(SiO4)6O2 to 963.6 ± 64 K and 0.206 eV of Mg2Y7.95Ce0.05(SiO4)6O2. We demonstrate that the radiation tolerance can be controlled by varying the chemical composition, and enhanced radiation tolerance is achieved by increasing the Ce concentration at the AI site.

Mechanism of fast lattice diffusion of hydrogen in palladium: Interplay of quantum fluctuations and lattice strain

NASA Astrophysics Data System (ADS)

Kimizuka, Hajime; Ogata, Shigenobu; Shiga, Motoyuki

2018-01-01

Understanding the underlying mechanism of the nanostructure-mediated high diffusivity of H in Pd is of recent scientific interest and also crucial for industrial applications. Here, we present a decisive scenario explaining the emergence of the fast lattice-diffusion mode of interstitial H in face-centered cubic Pd, based on the quantum mechanical natures of both electrons and nuclei under finite strains. Ab initio path-integral molecular dynamics was applied to predict the temperature- and strain-dependent free energy profiles for H migration in Pd over a temperature range of 150-600 K and under hydrostatic tensile strains of 0.0%-2.4%; such strain conditions are likely to occur in real systems, especially around the elastic fields induced by nanostructured defects. The simulated results revealed that, for preferential H location at octahedral sites, as in unstrained Pd, the activation barrier for H migration (Q ) was drastically increased with decreasing temperature owing to nuclear quantum effects. In contrast, as tetrahedral sites increased in stability with lattice expansion, nuclear quantum effects became less prominent and ceased impeding H migration. This implies that the nature of the diffusion mechanism gradually changes from quantum- to classical-like as the strain is increased. For H atoms in Pd at the hydrostatic strain of ˜2.4 % , we determined that the mechanism promoted fast lattice diffusion (Q =0.11 eV) of approximately 20 times the rate of conventional H diffusion (Q =0.23 eV) in unstrained Pd at a room temperature of 300 K.

Local strain-induced band gap fluctuations and exciton localization in aged WS2 monolayers

NASA Astrophysics Data System (ADS)

Krustok, J.; Kaupmees, R.; Jaaniso, R.; Kiisk, V.; Sildos, I.; Li, B.; Gong, Y.

2017-06-01

Optical properties of aged WS2 monolayers grown by CVD method on Si/SiO2 substrates are studied using temperature dependent photoluminescence and reflectance contrast spectroscopy. Aged WS2 monolayers have a typical surface roughness about 0.5 nm and, in addition, a high density of nanoparticles (nanocaps) with the base diameter about 30 nm and average height of 7 nm. The A-exciton of aged monolayer has a peak position at 1.951 eV while in as-grown monolayer the peak is at about 24 meV higher energy at room temperature. This red-shift is explained using local tensile strain concept, where strain value of 2.1% was calculated for these nanocap regions. Strained nanocaps have lower band gap energy and excitons will funnel into these regions. At T=10K a double exciton and trion peaks were revealed. The separation between double peaks is about 20 meV and the origin of higher energy peaks is related to the optical band gap energy fluctuations caused by random distribution of local tensile strain due to increased surface roughness. In addition, a wide defect related exciton band XD was found at about 1.93 eV in all aged monolayers. It is shown that the theory of localized excitons describes well the temperature dependence of peak position and halfwidth of the A-exciton band. The possible origin of nanocaps is also discussed.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

NASA Astrophysics Data System (ADS)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Optical properties of trinuclear metal chalcogenolate complexes - room temperature NIR fluorescence in [Cu2Ti(SPh)6(PPh3)2].

PubMed

Kühn, Michael; Lebedkin, Sergei; Weigend, Florian; Eichhöfer, Andreas

2017-01-31

The optical properties of four isostructural trinuclear chalcogenolato bridged metal complexes [Cu 2 Sn(SPh) 6 (PPh 3 ) 2 ], [Cu 2 Sn(SePh) 6 (PPh 3 ) 2 ], [Ag 2 Sn(SPh) 6 (PPh 3 ) 2 ] and [Cu 2 Ti(SPh) 6 (PPh 3 ) 2 ] have been investigated by absorption and photoluminescence spectroscopy and time-dependent density functional theory (TDDFT) calculations. All copper-tin compounds demonstrate near-infrared (NIR) phosphorescence at ∼900-1100 nm in the solid state at low temperature, which is nearly absent at ambient temperature. Stokes shifts of these emissions are found to be unusually large with values of about 1.5 eV. The copper-titanium complex [Cu 2 Ti(SPh) 6 (PPh 3 ) 2 ] also shows luminescence in the NIR at 1090 nm but with a much faster decay (τ ∼ 10 ns at 150 K) and a much smaller Stokes shift (ca. 0.3 eV). Even at 295 K this fluorescence is found to comprise a quantum yield as high as 9.5%. The experimental electronic absorption spectra well correspond to the spectra simulated from the calculated singlet transitions. In line with the large Stokes shifts of the emission spectra the calculations reveal for the copper-tin complexes strong structural relaxation of the excited triplet states whereas those effects are found to be much smaller in the case of the copper-titanium complex.

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Temperature-driven band inversion in Pb 0.77 Sn 0.23 Se : Optical and Hall effect studies

DOE PAGES

Anand, Naween; Buvaev, Sanal; Hebard, A. F.; ...

2014-12-23

Optical and Hall-effect measurements have been performed on single crystals of Pb₀.₇₇Sn₀.₂₃Se, a IV-VI mixed chalcogenide. The temperature dependent (10–300 K) reflectance was measured over 40–7000 cm⁻¹ (5–870 meV) with an extension to 15,500 cm⁻¹ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmore » spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Thus, density function theory calculation for the electronic band structure also make similar predictions.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Oxygen vacancy induced room temperature ferromagnetism in (In1-xNix)2O3 thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Kuppan, M.; Rao, N. Madhusudhana; Krishnamoorthi, C.; Omkaram, I.; Reddy, D. Sreekantha; Rao, G. Venugopal

2018-05-01

Nickel doped indium oxide thin films (In1-xNix)2O3 at x = 0.00, 0.03, 0.05 and 0.07 were deposited onto glass substrates by electron beam evaporation technique. The deposited thin films were subjected to annealing in air at 250 °C, 350 °C and 450 °C for 2 h using high temperature furnace. A set of films were vacuum annealed at 450 °C to study the role of oxygen on magnetic properties of the (In1-xNix)2O3 thin films. The thin films were subjected to different characterization techniques to study their structural, chemical, surface, optical and magnetic properties. All the synthesized air annealed and vacuum annealed films exhibit body centered cubic structure without any secondary phases. No significant change in the diffraction peak position, either to lower or higher diffraction angles has been observed. The band gap of the films decreased from 3.73 eV to 3.63 eV with increase of annealing temperature from 250 °C to 450 °C, in the presence of air. From a slight decrease in strength of magnetization to a complete disappearance of hysteresis loop has been observed in pure In2O3 thin films with increasing the annealing temperature from 250 °C to 450 °C, in the presence of air. The (In1-xNix)2O3 thin films annealed under vacuum follow a trend of enhancement in the strength of magnetization to increase in temperature from 250 °C to 450 °C. The hysteresis loop does not disappear at 450 °C in (In1-xNix)2O3 thin films, as observed in the case of pure In2O3 thin films.

Generation of colour centres in yttria-stabilized zirconia by heavy ion irradiations in the GeV range.

PubMed

Costantini, Jean-Marc; Beuneu, François; Schwartz, Kurt; Trautmann, Christina

2010-08-11

We have studied the colour centre production in yttria-stabilized zirconia (ZrO(2):Y(3 +)) by heavy ion irradiation in the GeV range using on-line UV-visible optical absorption spectroscopy. Experiments were performed with 11.4 MeV amu(-1) (127)Xe, (197)Au, (208)Pb and (238)U ion irradiations at 8 K or room temperature (RT). A broad and asymmetrical absorption band peaked at a wavelength about 500 nm is recorded regardless of the irradiation parameters, in agreement with previous RT irradiations with heavy ions in the 100 MeV range. This band is de-convoluted into two broad Gaussian-shaped bands centred at photon energies about 2.4 and 3.1 eV that are respectively associated with the F(+)-type centres (involving a singly ionized oxygen vacancy, VO· and T centres (i.e. Zr(3+) in a trigonal symmetry) observed by electron paramagnetic resonance (EPR) spectroscopy. In the case of 8 K Au ion irradiation at low fluences, six bands are used at about 1.9, 2.3, 2.7, 3.1 and 4.0 eV. The three bands near 2.0-2.5 eV can be assigned to oxygen divacancies (i.e. F(2)(+) centres). No significant effect of the irradiation temperature is found on the widths of all absorption bands for the same ion and fluence. This is attributed to the inhomogeneous broadening arising from the static disorder due to the native charge-compensating oxygen vacancies. However, the colour centre production yield is strongly enhanced at 8 K with respect to RT. When heating irradiated samples from 8 K to RT, the extra colour centres produced at low temperature do not recover completely to the level of RT irradiation. The latter results are accounted for by an electronically driven defect recovery process.

Ferromagnetism in doped or undoped spintronics nanomaterials

NASA Astrophysics Data System (ADS)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Optical and microwave dielectric properties of pulsed laser deposited Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joseph, Andrews; Goud, J. Pundareekam; Raju, K. C. James

2016-05-23

Optical properties of pulsed laser deposited (PLD) sodium bismuth titanate thin films (NBT), are investigated at wavelengths of 190-2500 nm. Microwave dielectric properties were investigated using the Split Post Dielectric Resonator (SPDR) technique. At 10 GHz, the NBT films have a dielectric constant of 205 and loss tangent of 0.0373 at room temperature. The optical spectra analysis reveals that NBT thin films have an optical band gap E{sub g}=3.55 eV and it has a dielectric constant of 3.37 at 1000 nm with dielectric loss of 0.299. Hence, NBT is a promising candidate for photonic device applications.

Effect of alpha-particle irradiation on the electrical properties of n-type Ge

NASA Astrophysics Data System (ADS)

Roro, K. T.; Janse van Rensburg, P. J.; Auret, F. D.; Coelho, S.

2009-12-01

Deep-level transient spectroscopy was used to investigate the effect of alpha particle irradiation on the electrical properties of n-type Ge. The samples were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radionuclide source. The main defects introduced were found to be electron traps with energy levels at EC-0.38, EC-0.21, EC-0.20, EC-0.15, and EC-0.10 eV, respectively. The main defects in alpha particle irradiation are similar to those introduced by MeV electron irradiation, where the main defect is the E-center. A quadratic increase in concentration as a function of dose is observed.

Small-signal amplifier based on single-layer MoS2

NASA Astrophysics Data System (ADS)

Radisavljevic, Branimir; Whitwick, Michael B.; Kis, Andras

2012-07-01

In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.

BariumCopperChFluorine (Ch = Sulfur, Selenium, Tellurium) p-type transparent conductors

NASA Astrophysics Data System (ADS)

Zakutayev, Andriy

BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 -- 3.5 eV) and a high concentration of free holes (1018 -- 1020 cm-3 ) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level close to the valence band maximum. BaCuChF thin film solid solutions prepared by pulsed laser deposition (PLD) have tunable properties, such as lattice constants, conductivity and optical band gaps. BaCuSF and BaCuSeF materials also feature room-temperature stable 3D excitons with spin-orbit-split levels. BaCuTeF has forbidden lowest-energy optical transitions which extends its transparency range. BaCuChF surfaces oxidize when exposed to air, but can be protected using Ch capping layers. Polycrystalline BaCuSeF thin films have a 4.85 eV work function, a 0.11 eV hole injection barrier into ZnPc, and 0.00 eV valence band offset with ZnTe. BaCuSeF should have s similar band offset and similar interfacial properties with CdTe and Cu(InGa)Se2, and BaCuSF should have no valence band offset with Cu2ZnSnS4, according to the transitivity rule. Therefore, BaCuSeF is suitable for applications as a p-layer in organic light-emitting diodes, p-i-n double-heterojunction and tandem chalcogenide solar cells.

Crystal growth and characterization of Hg-based chalcogenide compounds (Conference Presentation)

NASA Astrophysics Data System (ADS)

He, Yihui; Lin, Wenwen; Syrigos, Jonathan C.; Wang, Peng Li; Islam, Saiful M.; McCall, Kyle M.; Kostina, Svetlana S.; Liu, Zhifu; Wessels, Bruce W.; Kanatzidis, Mercouri G.

2016-09-01

In this work, two Hg-based chalcogenides were investigated in detail to reveal their potential capability of radiation detection at room temperature (RT). Cs2Hg6S7, with a bandgap of 1.63 eV, which is designed by the dimensional reduction theory proposed by our group, were prepared and characterized. α-HgS, with a bandgap of 2.10 eV, as a precursor used for the ternary compound synthesis, was also proposed and further investigated. For Cs2Hg6S7, the crystals tended to crystallize into needle form with small grains. Here, the conditions of Bridgman melt growth were optimized to obtain relatively large single crystals. The slight excess of Cs2S as a fluxing agent during growth was found to facilitate better crystallization and large grains. Interestingly, no inclusion or secondary phase was found in the as-grown single crystals. The improvement of bulk resistivity from 10^6 Ωcm to 10^8 Ωcm was also achieved through the control of stoichiometry during crystal growth. For α-HgS crystals, both physical vapor transport and chemical vapor transport methods have been applied. By modifying the transport temperature and transport agent, single crystal with size about 3x1.5 mm^2 was grown with resistivity higher than 10^11 Ωcm. Photoluminescence (PL) revealed that multiple peaks observed in the 1.6-2.3 eV range and excitonic peak from for α-HgS single crystals were observed indicating good crystalline quality. Finally, the planar detectors for both crystals were tested under Co57 gamma ray source. Both of the crystals showed reasonable gamma ray response, while α-HgS crystals could respond at a relatively higher counting rate.

Photo-Hall-effect study of excitation and recombination in Fe-doped GaN

NASA Astrophysics Data System (ADS)

Look, David C.; Leach, Jacob H.; Metzger, Robert

2017-02-01

The photo-Hall-effect was applied to the study of electron dynamics in semi-insulating Fe-doped GaN. High-powered light-emitting diodes of wavelengths λ = 940, 536, 449, 402, and 365 nm were used to excite steady-state free-electron volume concentrations Δn = 105-108 cm-3, depending on λ and intensity I0. Electron lifetime τ was determined from the energy E dependence of the excited sheet electron concentration Δns through the relationship Δns = I0τA(E), where the absorbance A(E) is a known function of sample thickness d and absorption coefficient α, and the energy dependence of α is taken from a theory of deep-center photoionization. The major sample impurities were Fe, Si, and C, with [Fe] ≫ [Si] and [C]. Fitted lifetimes τ ranged from 15 to 170 ps, depending on [Fe]. It was found that Δns ∝ I0 for [Si] > [C] and ∝ I01/2 for [Si] < [C]; the latter dependence arises possibly from self-compensation of neutral C impurities by N-vacancy donors. For [Si] > [C], some of the neutral Fe3+ is converted to Fe2+ with ground state Fe2+(5E) and excited state Fe2+(5T2); a fit of n vs. temperature T over the range of 290-325 K in the dark establishes E5E with respect to the conduction band: ECB - E5E = 0.564 eV - β5ET, where β5E = 3.6 × 10-4 eV/K. At room temperature, 294 K, ECB - E5E = 0.46 eV and ECB - E5T2 = 0.07 eV.

Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

NASA Astrophysics Data System (ADS)

Sarkar, A.; Chakrabarti, Mahuya; Sanyal, D.; Bhowmick, D.; Dechoudhury, S.; Chakrabarti, A.; Rakshit, Tamita; Ray, S. K.

2012-08-01

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H+ ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ˜4 × 1017 cm-3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ˜175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

Adsorption and dissociation of H2O on the (001) surface of uranium mononitride: energetics and mechanism from first-principles investigation.

PubMed

Bo, Tao; Lan, Jian-Hui; Zhang, Yu-Juan; Zhao, Yao-Lin; He, Chao-Hui; Chai, Zhi-Fang; Shi, Wei-Qun

2016-05-21

The interfacial interaction of uranium mononitride (UN) with water from the environment unavoidably leads to corrosion of nuclear fuels, which affects a lot of processes in the nuclear fuel cycle. In this work, the microscopic adsorption behaviors of water on the UN(001) surface as well as water dissociation and accompanying H2 formation mechanisms have been investigated on the basis of DFT+U calculations and ab initio atomistic thermodynamics. For adsorption of one H2O monomer, the predicted adsorption energies are -0.88, -2.07, and -2.07 eV for the most stable molecular, partially dissociative, and completely dissociative adsorption, respectively. According to our calculations, a water molecule dissociates into OH and H species via three pathways with small energy barriers of 0.78, 0.72, and 0.85 eV, respectively. With the aid of the neighboring H atom, H2 formation through the reaction of H* + OH* can easily occur via two pathways with energy barriers of 0.61 and 0.36 eV, respectively. The molecular adsorption of water shows a slight coverage dependence on the surface while this dependence becomes obvious for partially dissociative adsorption as the water coverage increases from 1/4 to 1 ML. In addition, based on the "ab initio atomistic thermodynamic" simulations, increasing H2O partial pressure will enhance the stability of the adsorbed system and water coverage, while increasing temperature will decrease the H2O coverage. We found that the UN(001) surface reacts easily with H2O at room temperature, leading to dissolution and corrosion of the UN fuel materials.

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

NASA Astrophysics Data System (ADS)

Wang, Buguo; Claflin, Bruce; Look, David; Jiménez, Juan

2018-02-01

Indium-doped ZnO bulk crystals grown by the hydrothermal method are highly-conductive, with resistivity at 0.01 Ωcm at room temperature as revealed by Hall-effect measurement. In this paper we report on structural and optical properties of these crystals. The grown In:ZnO crystals have been studied by high resolution X-ray diffraction, micro-Raman scattering and low-temperature photoluminescence and cathodoluminescence. It was found that the c lattice parameter of the grown In:ZnO crystal expanded 0.06% with respect to the lithium-doped ZnO crystal seed, and the In-doped ZnO overgrew the seed crystal pseudomorphically but with high quality crystallinity; the X-ray rocking curves show the FWHM of the Zn face and O faces are only 0.05° and 0.1° ; and the indium concentration in the crystal reaches the solubility limit. Raman spectra show strain relaxation gradually from the regrowth interface as well as a weak spectral feature at 723 cm-1. The peak at 312 cm-1 noticed in hydrothermally grown In:ZnO nanostructures does not appear in our In-doped crystals, indicating that this peak may be associated with specific defects (e.g. surface related) of the nanostructures. Photoluminescence measurements show that an indium donor bound exciton peak I9 (In0X) is the dominant peak in the PL spectrum, located at 3.3586 eV on the zinc face and 3.3577 eV on the oxygen face. Both of them deviated from the consensus literature value of 3.3567 eV, probably due to strain in the crystal induced by impurities.

Emissions of amides (N,N-dimethylformamide and formamide) and other obnoxious volatile organic compounds from different mattress textile products.

PubMed

Kim, Ki-Hyun; Pandey, Sudhir K; Kim, Yong-Hyun; Sohn, Jong Ryeul; Oh, J-M

2015-04-01

The emission rates of N,N-dimethylformamide (DMF), formamide (FAd), and certain hazardous volatile organic compounds (VOCs) were measured from seventeen mattress textile samples with four different raw material types: polyurethane (PU: n=3), polyester/polyethylene (PE: n=7), ethylene vinyl acetate (EV: n=3), and polyvinyl chloride (PC: n=4). To simulate the emissions in a heated room during winter season, measurements were made under temperature-controlled conditions, i.e., 50°C by using a mini-chamber system made of a midget impinger. Comparison of the data indicates that the patterns were greatly distinguished between DMF and FAd. PU products yielded the highest mean emission rates of DMF (2940 μg m(-2)h(-1): n=3) followed by PE (325 μg m(-2)h(-1): n=7), although its emission was not seen from other materials (EV and PC). In contrast, the pattern of FAd emission was moderately reversed from that of DMF: EV>PC>PE>PU. The results of our analysis confirm that most materials used for mattress production have the strong potential to emit either DMF or FAd in relatively large quantities while in use in children׳s care facilities, especially in winter months. Moreover, it was also observed that an increase in temperature (25°C to 50°C) had a significant impact on the emission rate of FAd and other hazardous VOCs. In addition to the aforementioned amides, the study revealed significant emissions of a number of hazardous VOCs, such as aromatic and carbonyl compounds. Copyright © 2014 Elsevier Inc. All rights reserved.

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se{sub 2} solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Du, H. W.; Li, Y.

2016-08-15

The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se{sub 2} thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely V{sub Se}, In{sub Cu} and (In{sub Cu}+V{sub Cu}), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of E{sub C}-0.08, E{sub C}-0.20 and E{sub C}-0.25 eV, respectively. The In{sub Cu} and (In{sub Cu}+V{sub Cu}) deep level defects are non-radiative recombination centers at room temperature.more » The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se{sub 2} layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (In{sub Cu}+V{sub Cu}) and V{sub se} defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se{sub 2} conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.« less

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

NASA Astrophysics Data System (ADS)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-02-01

SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandal, Krishna

High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3He will be very desirable. Tomore » address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10B) and enriched lithium ( 6Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.« less

Electron beam irradiated ITO films as highly transparent p-type electrodes for GaN-based LEDs.

PubMed

Hong, C H; Wie, S M; Park, M J; Kwak, J S

2013-08-01

We have investigated the effect of electron beam irradiation on the electrical and optical properties of ITO film prepared by magnetron sputtering method at room temperature. Electron beam irradiation to the ITO films resulted in a significant decrease in sheet resistance from 1.28 x 10(-3) omega cm to 2.55 x 10(-4) omega cm and in a great increase in optical band gap from 3.72 eV to 4.16 eV, followed by improved crystallization and high transparency of 97.1% at a wavelength of 485 nm. The overall change in electrical, optical and structural properties of ITO films is related to annealing effect and energy transfer of electron by electron beam irradiation. We also fabricated GaN-based light-emitting diodes (LEDs) by using the ITO p-type electrode with/without electron beam irradiation. The results show that the LEDs having ITO p-electrode with electron beam irradiation produced higher output power due to the low absorption of light in the p-type electrode.

Auger electron diffraction study of Fe 1- xNi x alloys epitaxially grown on Cu(100)

NASA Astrophysics Data System (ADS)

Martin, M. G.; Foy, E.; Chevrier, F.; Krill, G.; Asensio, M. C.

1999-08-01

We have combined Auger electron diffraction (AED), low-energy electron diffraction (LEED) and high-energy electron diffraction (RHEED) to examine the structure of Fe xNi 1- x alloys when the Fe content approaches 65%. At this concentration, the 'invar effect' takes place, so the magnetization falls to zero, and the thermal expansion coefficient is very small. The Fe xNi 1- x alloys, grown as metastable thin films by molecular-beam epitaxy on Cu(100) substrates, were studied as a function of the x stoichiometry. In contrast to the related bulk alloy compounds, we observe the collapse of the fcc-to-bcc structural transition in the Fe-rich films. Furthermore, the local atomic structure around Fe and Ni in the alloy has been simultaneously determined by the angular intensity distributions of Fe L 3VV (703 eV) and Ni L 3VV (848 eV) Auger electrons measured as a function of polar and azimuthal angles. For the films deposited at room temperature, we have confirmed the pseudomorphic growth morphology and the uniformity of the alloys.

Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

NASA Astrophysics Data System (ADS)

Gwozdz, K.; Stübner, R.; Kolkovsky, Vl.; Weber, J.

2017-07-01

We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si. The activation enthalpies of E65 and E75 are obtained as EC-0.11 eV (E65) and EC-0.13 eV (E75). The electric field dependence of their emission rates relates both levels to single acceptor states. From the analysis of the depth profiles, we conclude that the levels belong to two different defects, which contain only one hydrogen atom. A configuration is proposed, where the CH1BC defect, with hydrogen in the bond-centered position between neighboring C and Si atoms, is disturbed by interstitial oxygen in the second nearest neighbor position to substitutional carbon. The significant reduction of the CH1BC concentration in samples with high oxygen concentrations limits the use of this defect for the determination of low concentrations of substitutional carbon in Si samples.

Water dissociation on Mn(1×1)/Ag(100)

DOE PAGES

Arble, Chris; Tong, Xiao; Giordano, Livia; ...

2016-08-19

In this work we utilize experimental and simulation techniques to examine the molecular level interaction of water with a MnO(1×1) thin film deposited onto Ag(100). The formation of MnO(1×1)/Ag(100) was characterized by low energy electron diffraction and scanning tunneling microscopy. Density functional theory (DFT) shows MnO(1×1) is thermodynamically more stable than MnO(2×1) by –0.4 eV per MnO. Upon exposure to 2.5 Torr water vapor at room temperature, X-ray photoemission spectroscopy results show extensive surface hydroxylation attributed to reactivity at MnO(1×1) terrace sites. DFT calculations of a water monomer on MnO(1×1)/Ag(100) show the dissociated form is energetically more favorable than molecularmore » adsorption, with a hydroxylation activation barrier 0.4 eV per H 2O. Lastly, these results are discussed and contrasted with previous studies of MgO/Ag(100) which show a stark difference in behavior for water dissociation.« less

First-principles calculation of electronic and optical properties of graphene like ZnO (G-ZnO)

NASA Astrophysics Data System (ADS)

Farooq, Rabia; Mahmood, Tariq; Anwar, Abdul Waheed; Abbasi, Ghadah Niaz

2016-02-01

Semiconductor metal oxides are favorable for their exotic properties like wide band gap, transparency, enhanced charge mobility, and strong luminescence at room temperature. These properties have put metal oxides under limelight, especially ZnO has earned a renowned position in emanate industry for transparent electrodes, electronics, super-capacitors, photo-voltaic cells, gas-sensors, and many more. ZnO is not only environmental friendly but also a highly stable and cheap photo catalytic source naturally available in high abundance. First principles calculation is performed to study optoelectronic properties of ZnO. Geometry optimization of graphene like ZnO (G-ZnO) is preformed using generalized gradient approximation along with hybrid functional (GGA-PBE and GGA-PBE + U) to calculate various structural and electronic parameters of G-ZnO. Employing Hubbard (U) parameter improved band gap and c/a ratio calculation as 1.245 eV and 1.613 respectively; also dielectric constant is calculated as 4.58 (U = 15 eV) which is in accordance with the available experimental data.

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

NASA Astrophysics Data System (ADS)

Chung, S. J.; Senthil Kumar, M.; Lee, Y. S.; Suh, E.-K.; An, M. H.

2010-05-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Influence of europium (Eu3+) ions on the optical properties of lithium zinc phosphate glasses

NASA Astrophysics Data System (ADS)

Shwetha, M.; Eraiah, B.

2018-02-01

Europium doped lithium zinc phosphate glasses with composition xEu2O3-(15-x) Li2O-45ZnO-40P2O5 (where x=0, 0.1, 0.3 and 0.5 mol %) named as EP0, EP1, EP3 and EP5 respectively, are prepared by melt-quenching method and the influence of Eu3+ ions on physical and optical properties of these glasses has been studied. Optical properties were studied using optical absorption spectra which was recorded at room temperature in the UV-Visible region. Optical direct band gap and indirect band gap energies were measured and their values range from 3.167 to 4.23eV and 2.08 to 3.02eV, respectively. Refractive indices have been measured with respect to different concentration of europium ions. Fluorescence spectroscopy measurements have been performed by excitation in the UV-Visible range, which resulted in the significant fluorescence peaks. The luminescence color of the glass system is characterized using Commission International de l’Eclairage de France 1931 standards.

Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

DOE PAGES

Li, Jin; He, Chaoyu; Meng, Lijun; ...

2015-09-14

Here, we report that two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tunedmore » up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.« less

Effect of High Pressure and Temperature on Structural, Thermodynamic and Thermoelectric Properties of Quaternary CoFeCrAl Alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-03-01

Employing first-principles based on density functional theory we have investigated the structural, magneto-electronic, thermoelectric and thermodynamic properties of quaternary Heusler alloy CoFeCrAl. Electronic band structure displays that CoFeCrAl is an indirect band gap semiconductor in spin-down state with the band gap value of 0.65 eV. Elastic constants reveal CoFeCrAl is a mechanically stable structure having a Debye temperature of 648 K along with a high melting temperature (2130 K). The thermoelectric properties in the temperature range 50-800 K have been calculated. CoFeCrAl possesses a high Seebeck coefficient of - 46 μV/K at room temperature along with the huge power factor of ˜ 4.8 (1012 μW cm-1 K-2 s-1) which maximizes the figure-of-merit up to ˜ 0.75 at 800 K temperature and suggesting CoFeCrAl as potential thermoelectric material. The effect of high pressure and high temperature on the thermal expansion, Grüneisen parameter and heat capacity were also studied by using the quasi-harmonic Debye model.

Investigation of conduction and relaxation phenomena in BaZrxTi1-xO3 (x=0.05) by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Mahajan, Sandeep; Haridas, Divya; Ali, S. T.; Munirathnam, N. R.; Sreenivas, K.; Thakur, O. P.; Prakash, Chandra

2014-10-01

In present study we have prepared ferroelectric BaZrxTi1-xO3 (x=0.05) ceramic by conventional solid state reaction route and studied its electrical properties as a function of temperature and frequency. X-ray diffraction (XRD) analysis shows single-phase formation of the compound with orthorhombic crystal structure at room temperature. Impedance and electric modulus spectroscopy analysis in the frequency range of 40 Hz-1 MHz at high temperature (200-600 °C) suggests two relaxation processes with different time constant are involved which are attributed to bulk and grain boundary effects. Frequency dependent dielectric plot at different temperature shows normal variation with frequency while dielectric loss (tanδ) peak was found to obey an Arrhenius law with activation energy of 1.02 eV. The frequency-dependent AC conductivity data were also analyzed in a wide temperature range. In present work we have studied the role of grain and grain boundaries on the electrical behaviour of Zr-doped BaTiO3 and their dependence on temperature and frequency by complex impedance and modulus spectroscopy (CIS) technique in a wide frequency (40 Hz-1 MHz) and high temperature range.

Effect of phase transformation on optical and dielectric properties of zirconium oxide nanoparticles

NASA Astrophysics Data System (ADS)

Chintaparty, Rajababu; Palagiri, Bhavani; Reddy Nagireddy, Ramamanohar; subbha Reddy Imma Reddy, Venkata

2015-09-01

Zirconium oxide nanoparticle (ZrO2) is synthesized by the hydrothermal method at different calcination temperatures. The structural analysis is carried out by X-ray diffraction and Raman spectra. The sample prepared at 400 °C and 1100 °C showed the cubic and monoclinic phase, respectively, and the sample calcined at 600 °C and 800 °C showed the mixed phase with co-existence of cubic and monoclinic phases. Furthermore, the morphology and particle size of these samples were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM) analysis. The band gap estimated from UV-Vis spectra of ZrO2 (zirconia) nanocrystalline materials calcined at different temperatures from 400 °C to 1100 °C was in the range of 2.6-4.2 eV. The frequency dependence of dielectric constant and dielectric loss was investigated at room temperature. The low frequency region of dielectric constant is attributed to space charge effects.

Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

NASA Astrophysics Data System (ADS)

Ortega, N.; Kumar, Ashok; Katiyar, R. S.

2008-10-01

We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

STM study of C60F18 high dipole moment molecules on Au(111)

NASA Astrophysics Data System (ADS)

Bairagi, K.; Bellec, A.; Chumakov, R. G.; Menshikov, K. A.; Lagoute, J.; Chacon, C.; Girard, Y.; Rousset, S.; Repain, V.; Lebedev, A. M.; Sukhanov, L. P.; Svechnikov, N. Yu.; Stankevich, V. G.

2015-11-01

Scanning tunneling microscopy and spectroscopy studies of C60F18 molecules deposited on Au(111) are reported and compared to C60 molecules both at liquid helium temperature and room temperature (RT). Whereas adsorption and electronic properties of C60F18 single molecules were studied at low temperature (LT), self-assemblies were investigated at RT. In both cases, the fluorine atoms of the C60F18 molecules are pointed towards the surface. Individual C60F18 molecules on Au(111) have a HOMO-LUMO gap of 2.9 eV. The self-assembled islands exhibit a close-packed hexagonal lattice with amorphous borders. The comparison with C60 molecules clearly demonstrates the influence of the C60F18 electric dipole moment (EDM) on the electronic properties of single molecules and on the thermodynamics of self-assembled islands. Besides, the apparent height value of a separate molecule increases in a self-assembly environment as a result of a depolarization phenomenon.

Structural and electrical properties of Li4Ti5O12 anode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Vikram Babu, B.; Vijaya Babu, K.; Tewodros Aregai, G.; Seeta Devi, L.; Madhavi Latha, B.; Sushma Reddi, M.; Samatha, K.; Veeraiah, V.

2018-06-01

In this work we investigate Li4Ti5O12 (LTO) anode material synthesized by conventional solid state reaction method calcined at 850 °C for 16 h. Thermal analysis reveals the temperature dependence of the material properties. The phase composition, micro-morphology and elemental analysis of the compound are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectra (EDS) respectively. The results of XRD pattern possessed cubic spinel structure with space group Fd-3m. The morphological features of the powder sample are in the range of 1.1 μm. The EDS spectra confirm the constituent elemental composition of the sample. Electrical conductivity measurement at different frequencies and temperatures had been carried out; and at room temperature it is found to be 5.96 × 10-7 S/cm. Besides, for the different frequencies applied, the activation energies were calculated and obtained to be in the range of 0.2-0.4 eV.

Effect of on-site Coulomb interaction on electronic and transport properties of 100% spin polarized CoMnVAs

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2017-08-01

The structural, electronic, magnetic and transport properties of a new quaternary Heusler alloy CoMnVAs have been investigated by employing generalized gradient approximation (GGA), modified Becke-Johnson (mBJ) and GGA with Hubbard U correction (GGA + U). The alloy is energetically more stable in ferromagnetic Y1 type structure. Elastic parameters reveal high anisotropy and ductile nature of the material. CoMnVAs shows half-metallic ferromagnet character with 100% spin polarization at Fermi level with band gap of 0.55 eV in the minority spin state. The alloy also possesses high electrical conductivity and Seebeck coefficients with 15 μVK-1 at room temperature, achieving a figure of merit of 0.65 at high temperatures. The high degree of ductility, 100% spin polarization and large Seebeck coefficient, makes it an attractive candidate to be used in spin voltage generators and thermoelectric materials.

EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy

NASA Astrophysics Data System (ADS)

Shan, Y. Y.; Ling, C. C.; Deng, A. H.; Panda, B. K.; Beling, C. D.; Fung, S.

1997-03-01

Positron lifetime measurements performed on Au/GaAs samples at room temperature with an applied square-wave ac bias show a frequency dependent interface related lifetime intensity that peaks around 0.4 Hz. The observation is explained by the ionization of the deep-donor level EL2 to EL2+ in the GaAs region adjacent to the Au/GaAs interface, causing a transient electric field to be experienced by positrons drifting towards the interface. Without resorting to temperature scanning or any Arrhenius plot the EL2 donor level is found to be located 0.80+/-0.01+/-0.05 eV below the conduction-band minimum, where the first error estimate is statistical and the second systematic. The result suggests positron annihilation may, in some instances, act as an alternative to capacitance transient spectroscopies in characterizing deep levels in both semiconductors and semi-insulators.

Collisions of slow polyatomic ions with surfaces: dissociation and chemical reactions of C2H2+*, C2H3+, C2H4+*, C2H5+, and their deuterated variants C2D2+* and C2D4+* on room-temperature and heated carbon surfaces.

PubMed

Jasík, Juraj; Zabka, Jan; Feketeova, Linda; Ipolyi, Imre; Märk, Tilmann D; Herman, Zdenek

2005-11-17

Interaction of C2Hn+ (n = 2-5) hydrocarbon ions and some of their isotopic variants with room-temperature and heated (600 degrees C) highly oriented pyrolytic graphite (HOPG) surfaces was investigated over the range of incident energies 11-46 eV and an incident angle of 60 degrees with respect to the surface normal. The work is an extension of our earlier research on surface interactions of CHn+ (n = 3-5) ions. Mass spectra, translational energy distributions, and angular distributions of product ions were measured. Collisions with the HOPG surface heated to 600 degrees C showed only partial or substantial dissociation of the projectile ions; translational energy distributions of the product ions peaked at about 50% of the incident energy. Interactions with the HOPG surface at room temperature showed both surface-induced dissociation of the projectiles and, in the case of radical cation projectiles C2H2+* and C2H4+*, chemical reactions with the hydrocarbons on the surface. These reactions were (i) H-atom transfer to the projectile, formation of protonated projectiles, and their subsequent fragmentation and (ii) formation of a carbon chain build-up product in reactions of the projectile ion with a terminal CH3-group of the surface hydrocarbons and subsequent fragmentation of the product ion to C3H3+. The product ions were formed in inelastic collisions in which the translational energy of the surface-excited projectile peaked at about 32% of the incident energy. Angular distributions of reaction products showed peaking at subspecular angles close to 68 degrees (heated surfaces) and 72 degrees (room-temperature surfaces). The absolute survival probability at the incident angle of 60 degrees was about 0.1% for C2H2+*, close to 1% for C2H4+* and C2H5+, and about 3-6% for C2H3+.

Oxygen chemisorption and oxide formation on Ni silicide surfaces at room temperature

NASA Astrophysics Data System (ADS)

Valeri, S.; Del Pennino, U.; Lomellini, P.; Sassaroli, P.

1984-10-01

Auger spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) have been used in a comparative study of the room temperature oxidation of Ni silicides of increasing silicon content, from Ni3Si to NiSi2. The results were compared with those for the oxidation of pure Si and Ni. All suicide surfaces in the exposure range between 0.2 and 104 L follow two-step oxidation kinetics: the first step is characterized by an oxygen uptake rate higher than in the second one. Attention was focused on the oxygen induced modifications of metal and silicon AES and XPS spectra in silicides, which are indicative of changes in the local electronic structure and in the chemical bonding. In general oxygen bonds with silicon leaving the metal unaffected; however, at high exposures, characteristic feature of the Ni-oxygen bonds appear in the Ni(MVV) Auger line of the Ni-rich silicides. The presence of Ni atoms enhances considerably the Si oxidation process in silicides with respect to pure Si, in terms both of a higher Si oxidation state and a higher oxygen uptake; this enhancement is stronger in Ni-rich silicides than in Si-rich silicides. The oxygen induced contributions in the Si(LVV) Auger line show structures at 76 and 83 eV, and those in the Si 2p photoemission spectra show binding energy shifts between -1 and -3.8 eV; we conclude that the oxidation products are mainly silicon suboxides, like Si2O3 and SiO; only on Ni3 Si at 104 L, a significant contribution of SiO2 was found. The Ni catalytic effect on Si oxidation has been discussed in terms of the suicide heat of formation, of the breaking of the silicon sp3 configuration in silicides and of the metal atom dissociative effect on the O2 molecule.

Doping induced modifications in the electronic structure and magnetism of ZnO films: Valence band and conduction band studies

NASA Astrophysics Data System (ADS)

Katba, Savan; Jethva, Sadaf; Udeshi, Malay; Trivedi, Priyanka; Vagadia, Megha; Shukla, D. K.; Choudhary, R. J.; Phase, D. M.; Kuberkar, D. G.

2017-11-01

The electronic structure of Pulsed Laser Deposited (PLD) ZnO, Zn0.95Fe0.05O (ZFO), Zn0.98Al0.02O (ZAO) and Zn0.93Fe0.05Al0.02O (ZFAO) films were investigated by Photoelectron spectroscopy and X-ray absorption spectroscopy. X-ray diffraction and ϕ-scan measurements show epitaxial c-directional growth of the films. Temperature dependent magnetization and M-H loop measurements show the presence of room temperature magnetic ordering in all the films. Fittings of Fe 2p XPS and Fe L3,2 -edge XAS of ZFO and ZFAO films show the presence of Fe, in both, Fe+2 and Fe+3 states in tetrahedral symmetry. Valence band spectra in resonance mode show resonance photon energy at 56 eV showing the presence of Fe2+ state (∼2 eV) near the Fermi level. A significant effect of Fe and Al doping on the spectral shape of O K-edge XAS was observed. Results of the Spectroscopic studies reveal that, ferromagnetism in the films is due to the contribution of oxygen deficiency which increases the number of charge carriers that take part in the exchange interaction. Al co-doping with Fe (in ZFAO) results in the enhancement of saturation magnetization by increase in the carrier-mediated ferromagnetic exchange interaction.

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE PAGES

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; ...

2017-12-09

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Understanding the high-temperature deformation

NASA Astrophysics Data System (ADS)

Gyurko, Angela M.; Vignoul, Gregory E.; Tien, John K.; Sanchez, Juan M.

1992-11-01

Engineering, University of Texas at Austin, Austin, TX 78712 While much of the high-temperature intermetallics research has centered around Ni3Al and other aluminum-based systems, the present study focuses on the Engel-Brewer Ll2 intermetallic Ir3Zr, which has a melting temperature approaching that of ceramics (2280 °C). Due to limited material availability, the technique of microindentation was used to study both the temperature and time dependence of strength. Because of the widely held belief that certain mechanical properties of intermetallics scale roughly with temperature, Ir3Zr was expected to exhibit high strength. The microhardness was observed to vary from 225 MPa at room temperature to 75 MPa at 1400 °C, which is significantly lower than the behavior of Ni3Al. The activation energy for creep was determined to be 467 kJ/mole, and the stress exponent was found to be 18.2. The ordering energy of this system was calculated to be 0.114 eV. If it can be assumed that high ordering energy correlates to a high antiphase boundary (APB) energy, then the behavior of this system is consistent with a model that predicts highly glissile dislocation cores.

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Synthesis and Behavior of Cetyltrimethyl Ammonium Bromide Stabilized Zn1+xSnO3+x (0 ≤ x ≤1) Nano-Crystallites

PubMed Central

Placke, Astrid; Kumar, Ashok; Priya, Shashank

2016-01-01

We report synthesis of cetyltrimethyl ammonium bromide (CTAB) stabilized Zn1+xSnO3+x (0 ≤ x ≤1) nano-crystallites by facile cost-effective wet chemistry route. The X-ray diffraction patterns of as-synthesized powders at the Zn/Sn ratio of 1 exhibited formation of ZnSn(OH)6. Increasing the Zn/Sn ratio further resulted in the precipitation of an additional phase corresponding to Zn(OH)2. The decomposition of these powders at 650°C for 3h led to the formation of the orthorhombic phase of ZnSnO3 and tetragonal SnO2-type phase of Zn2SnO4 at the Zn/Sn ratio of 1 and 2, respectively, with the formation of their mixed phases at intermediate compositions, i.e., at Zn/Sn ratio of 1.25, 1.50 and 1.75, respectively. The lattice parameters of orthorhombic and tetragonal phases were a ~ 3.6203 Å, b ~ 4.2646 Å and c ~ 12.8291Å (for ZnSnO3) and a = b ~ 5.0136 Å and c ~ 3.3055Å (for Zn2SnO4). The transmission electron micrographs revealed the formation of nano-crystallites with aspect ratio ~ 2; the length and thickness being 24, 13 nm (for ZnSnO3) and 47, 22 nm (for Zn2SnO4), respectively. The estimated direct bandgap values for the ZnSnO3 and Zn2SnO4 were found to be 4.21 eV and 4.12 eV, respectively. The ac conductivity values at room temperature (at 10 kHz) for the ZnSnO3 and Zn2SnO4 samples were 8.02 × 10−8 Ω-1 cm-1 and 6.77 × 10−8 Ω-1 cm-1, respectively. The relative permittivity was found to increase with increase in temperature, the room temperature values being 14.24 and 25.22 for the samples ZnSnO3 and Zn2SnO4, respectively. Both the samples, i.e., ZnSnO3 and Zn2SnO4, exhibited low values of loss tangent up to 300 K, the room temperature values being 0.89 and 0.72, respectively. A dye-sensitized solar cell has been fabricated using the optimized sample of zinc stannate photo-anode, i.e., Zn2SnO4. The cyclic voltammetry revealed oxidation and reduction around 0.40 V (current density ~ 11.1 mA/cm2) and 0.57 V (current density– 11.7 mA/cm2) for Zn2SnO4 photo-anode in presence of light. PMID:27228102

Adsorption and desorption of hydrogen at nonpolar GaN (1 1 ¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties

NASA Astrophysics Data System (ADS)

Lymperakis, L.; Neugebauer, J.; Himmerlich, M.; Krischok, S.; Rink, M.; Kröger, J.; Polyakov, V. M.

2017-05-01

The adsorption of hydrogen at nonpolar GaN (1 1 ¯00 ) surfaces and its impact on the electronic and vibrational properties is investigated using surface electron spectroscopy in combination with density functional theory (DFT) calculations. For the surface mediated dissociation of H2 and the subsequent adsorption of H, an energy barrier of 0.55 eV has to be overcome. The calculated kinetic surface phase diagram indicates that the reaction is kinetically hindered at low pressures and low temperatures. At higher temperatures ab initio thermodynamics show, that the H-free surface is energetically favored. To validate these theoretical predictions experiments at room temperature and under ultrahigh vacuum conditions were performed. They reveal that molecular hydrogen does not dissociatively adsorb at the GaN (1 1 ¯00 ) surface. Only activated atomic hydrogen atoms attach to the surface. At temperatures above 820 K, the attached hydrogen gets desorbed. The adsorbed hydrogen atoms saturate the dangling bonds of the gallium and nitrogen surface atoms and result in an inversion of the Ga-N surface dimer buckling. The signatures of the Ga-H and N-H vibrational modes on the H-covered surface have experimentally been identified and are in good agreement with the DFT calculations of the surface phonon modes. Both theory and experiment show that H adsorption results in a removal of occupied and unoccupied intragap electron states of the clean GaN (1 1 ¯00 ) surface and a reduction of the surface upward band bending by 0.4 eV. The latter mechanism largely reduces surface electron depletion.

Room temperature X- and gamma-ray detectors using thallium bromide crystals

NASA Astrophysics Data System (ADS)

Hitomi, K.; Muroi, O.; Shoji, T.; Suehiro, T.; Hiratate, Y.

1999-10-01

Thallium bromide (TlBr) is a compound semiconductor with wide band gap (2.68eV) and high X- and γ-ray stopping power. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using purified material. Two types of room temperature X- and γ-ray detectors were fabricated from the TlBr crystals: TlBr detectors with high detection efficiency for positron annihilation γ-ray (511keV) detection and TlBr detectors with high-energy resolution for low-energy X-ray detection. The detector of the former type demonstrated energy resolution of 56keV FWHM (11%) for 511keV γ-rays. Energy resolution of 1.81keV FWHM for 5.9keV was obtained from the detector of the latter type. In order to analyze noise characteristics of the detector-preamplifier assembly, the equivalent noise charge (ENC) was measured as a function of the amplifier shaping time for the high-resolution detector. This analysis shows that parallel white noise and /1/f noise were dominant noise sources in the detector system. Current-voltage characteristics of the TlBr detector with a small Peltier cooler were also measured. Significant reduction of the detector leakage current was observed for the cooled detectors.

Room-temperature activation of methane and dry re-forming with CO 2 on Ni-CeO 2 (111) surfaces: Effect of Ce 3+ sites and metal–support interactions on C–H bond cleavage

DOE PAGES

Lustemberg, Pablo G.; Ramírez, Pedro J.; Liu, Zongyuan; ...

2016-10-27

The results of core-level photoemission indicate that Ni-CeO 2(111) surfaces with small or medium coverages of nickel are able to activate methane at 300 K, producing adsorbed CH x and CO x (x = 2, 3) groups. Calculations based on density functional theory predict a relatively low activation energy of 0.6–0.7 eV for the cleavage of the first C–H bond in the adsorbed methane molecule. Ni and O centers of ceria work in a cooperative way in the dissociation of the C–H bond at room temperature, where a low Ni loading is crucial for the catalyst activity and stability. Themore » strong electronic perturbations in the Ni nanoparticles produced by the ceria supports of varying natures, such as stoichiometric and reduced, result in a drastic change in their chemical properties toward methane adsorption and dissociation as well as the dry reforming of methane reaction. Lastly, the coverage of Ni has a drastic effect on the ability of the system to dissociate methane and catalyze the dry re-forming process.« less

Room-temperature activation of methane and dry re-forming with CO 2 on Ni-CeO 2 (111) surfaces: Effect of Ce 3+ sites and metal–support interactions on C–H bond cleavage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lustemberg, Pablo G.; Ramírez, Pedro J.; Liu, Zongyuan

The results of core-level photoemission indicate that Ni-CeO 2(111) surfaces with small or medium coverages of nickel are able to activate methane at 300 K, producing adsorbed CH x and CO x (x = 2, 3) groups. Calculations based on density functional theory predict a relatively low activation energy of 0.6–0.7 eV for the cleavage of the first C–H bond in the adsorbed methane molecule. Ni and O centers of ceria work in a cooperative way in the dissociation of the C–H bond at room temperature, where a low Ni loading is crucial for the catalyst activity and stability. Themore » strong electronic perturbations in the Ni nanoparticles produced by the ceria supports of varying natures, such as stoichiometric and reduced, result in a drastic change in their chemical properties toward methane adsorption and dissociation as well as the dry reforming of methane reaction. Lastly, the coverage of Ni has a drastic effect on the ability of the system to dissociate methane and catalyze the dry re-forming process.« less

Novel room temperature synthesis of ZnO nanosheets, characterization and potentials in light harvesting applications and electrochemical devices.

PubMed

Mansournia, Mohammadreza; Rafizadeh, Somayeh; Hosseinpour-Mashkani, S Mostafa; Motaghedifard, Mohammad Hassan

2016-08-01

Zinc oxide nanosheets (ZnONSs) were successfully synthesized using Zn(NO3)2·4H2O as the starting reagent in ammonia atmosphere at room temperature by a novel gas-solution precipitation method. XRD and EDS patterns indicated that pure ZnONSs were produced only in 15min reaction time. Besides, investigating the optical properties of the as-prepared ZnO nanosheets using UV-Vis diffused reflectance spectroscopy (DRS) exhibited their semiconducting property by revealing one optical band gap in 3.3eV. Moreover, rhodamine B and methylene blue degradation were used as a probe reaction to test the as-synthesized ZnONSs photoactivity. Furthermore, a possible reaction mechanism for ZnONSs formation was discussed. On the other hand, operation of ZnONSs in Dye-sensitized solar cell (DSSC) was investigated by current density-voltage (Jsc-Voc) curve. Finally, a pencil graphite electrode was decorated using ZnONSs and pure MWCNT to provide an electrochemical device for Pb(+2) ions sensing. This modified electrode showed agreeable responses to trace amounts of Pb(+2) in NaOAC/HOAC buffer solutions. The limit of detection was found to be 0.112nmolL(-1) for Pb(+2). Copyright © 2016 Elsevier B.V. All rights reserved.

Synthesis aspects, structural, spectroscopic, antimicrobial and room temperature ferromagnetism of zinc iodide complex with Schiff based ligand.

PubMed

Shakila, K; Kalainathan, S

2015-01-25

In this paper, we report the successful growth of complex compound of zinc iodide with thiocarbamide by slow evaporation method. The single crystal XRD study reveals that the crystal belongs to monoclinic system with centrosymmetric space group and powder XRD analysis shows that the perfect crystalline nature of the crystal. The presence of functional group and element were confirmed from FT-IR and EDAX analysis. Optical absorbance of the grown crystal was studied by UV-Vis spectrophotometer. The optical constants were calculated from the optical absorbance data such as refractive index (n), extinction coefficient (K) and reflectance (R). The optical band gap (Eg) of thiocarbamide zinc iodide crystal is 4.22 eV. The magnetic properties of grown crystal have been determined by Vibrating Sample Magnetometry (VSM). Room temperature magnetization revealed a ferromagnetic behaviour for the grown crystal. The antibacterial and antifungal activities of the title compound were performed by well diffusion method and MIC method against the standard bacteria like Staphylococcus aureus, Escherichia coli, Klebsiella pneumonia and against fungus like Aspergillus niger, Rhizopus sps and Penicillium sps. Thermal behaviour of the crystal has been investigated using thermogravimetric analysis (TGA) and differential thermal analysis (DTA). Copyright © 2014. Published by Elsevier B.V.

Room-temperature preparation of trisilver-copper-sulfide/polymer based heterojunction thin film for solar cell application

NASA Astrophysics Data System (ADS)

Lei, Yan; Yang, Xiaogang; Gu, Longyan; Jia, Huimin; Ge, Suxiang; Xiao, Pin; Fan, Xiaoli; Zheng, Zhi

2015-04-01

Solar cells devices based on inorganic/polymer heterojunction can be a possible solution to harvest solar energy and convert to electric energy with high efficiency through a cost-effective fabrication. The solution-process method can be easily used to produce large area devices. Moreover, due to the intrinsic different charge separation, diffusion or recombination in various semiconductors, the interfaces between each component may strongly influence the inorganic/polymer heterojunction performance. Here we prepared a n-type Ag3CuS2 (Eg = 1.25 eV) nanostructured film through a room-temperature element reaction process, which was confirmed as direct bandgap semiconductor through density function theory simulation. This Ag3CuS2 film was spin-coated with an organic semiconducting poly(3-hexythiophene) (P3HT) or polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7) film, which formed an inorganic/polymer heterojunction. After constructing it to a solar cell device, the power conversion efficiencies of 0.79% and 0.31% were achieved with simulated solar illumination on Ag3CuS2/P3HT and Ag3CuS2/PTB7, respectively. A possible mechanism was discussed and we showed the charge separation at interface of inorganic and polymer semiconductors played an important role.

Defect engineering and luminescence characterization in bulk and thin film polycrystalline silicon

NASA Astrophysics Data System (ADS)

Koshka, Yaroslav

The passivation of recombination centers and the monitoring of passivation efficiency are critical for successful utilization of polycrystalline silicon (poly-Si) in solar cells and in thin-film transistors. Two important classes of poly-Si-thin films and bulk wafers-can respond differently to passivation processes (hydrogenation efficiency, possibilities of extrinsic and intrinsic gettering, etc.) and demand different approaches to their characterization. The effect of photoluminescence (PL) enhancement using ultrasound treatment (UST) was studied in poly-Si and amorphous-Si films on glass. In addition to the previously documented growth of the 0.7 eV oxygen related band in poly-Si films, generation and dramatic enhancement of a new luminescence maximum at about 0.98 eV occurs in films containing a superposition of poly-Si and alpha-Si phases. A model of ultrasound stimulated hydrogen detrapping followed by hydrogen diffusion and passivation of non-radiative centers was developed. Room temperature photoluminescence (PL) mapping was used to monitor improvement of recombination properties in bulk photovoltaic poly-Si during solar cell fabrication. Analysis of the statistical distribution of the values of PL enhancement shows that the contribution of individual processing steps to the increasing PL are different in nature. A correlation between PL mapping and minority carrier diffusion length was performed and quantitatively described. A method of obtaining separate information about the recombination properties of the bulk and the p/n junction regions of solar cells was developed. The method is based on measurements of PL distribution under different biases applied to solar cells and under different intensities of the excitation light. A PL study at 0.8 eV spectral maximum and comparison with the band-to-band PL was performed. Influence of the defects responsible for the 0.8 eV defect band was insignificant in as-grown wafers. It was revealed, however, that these defects start to determine non-homogeneity of recombination properties in poly-Si after the solar cell processing. Room-T electroluminescence (EL) mapping is shown to be a complimentary approach to characterize the bulk and the p/n junction regions of poly-Si solar cells. The major advantage of the EL approach is the possibility of instantaneous mapping of solar-grade poly-Si.

Optical properties of BaTiO3 nanoparticles and silver nanoprisms in polymer host matrices

NASA Astrophysics Data System (ADS)

Requena, Sebastian

Nanocomposites are materials comprised of a host matrix, such as glass or polymer, with embedded nanoparticles. Embedding nanoparticles into the host makes it possible to create materials with properties that are distinctly unique from those of their host and nanoparticle constituents. Nanocomposites can have superior mechanical, thermal, and optical properties compared to their host materials. We characterized the photoluminescent properties of BaTiO3 polymer nanocomposites and the effects of chemically modifying the nanoparticles surface on said properties. BaTiO3 nanopowders of average grain sizes 50 nm and 100 nm were functionalized by (3-aminopropyl)triethoxysilane (3APTS) and mixed with poly(methyl methacrylate)/toluene solution. The nanocomposites films morphology and chemical structure were studied via AFM and FTIR. The photoluminescence spectrum of the pure nanoparticles was composed of an emission at ˜3.0 eV and multiple bands centered at ˜2.5 eV. Surface functionalization of the BaTiO3 nanoparticles via 3APTS increased overall luminescence at room temperature while only enhancing the ˜3.0 eV emission at low-temperature. On the other hand, polymer coating of the functionalized nanoparticles significantly enhances ˜3.0 eV emissions while decreasing emissions associated with near-surface lattice distortions at ˜2.5 eV. Chemical modification of the surface with 3APTS and PMMA presents a pathway to tune and control the photoluminescent properties of BTO nanoparticles. We also present optical studies of two different size distributions of silver triangular nanoprisms, one with a dipole resonance at ˜520 nm and the other with a dipole resonance at ˜650 nm, placed in different media. The silver nanoprisms were embedded in a polyvinyl alcohol (PVA) polymer matrix and oriented by stretching the polymer/nanoprism nanocomposite films. We observe significantly increased linear dichroism in the region associated with the plasmonic in-plane dipole mode upon stretching. Additionally, there is a weaker linear dichroism in the region associated with out-of-plane modes, which vanish in the extinction spectrum of the stretched nanocomposite film. Our results show that these silver nanoprisms are promising as key components in wavelength-specific depolarizers and depolarization-based assays.

The effect of storage temperature on the biological activity of extracellular vesicles for the complement system.

PubMed

Park, Sang June; Jeon, Hyungtaek; Yoo, Seung-Min; Lee, Myung-Shin

2018-05-10

Extracellular vesicles (EVs) are mediators of intercellular communication by transporting cargo containing proteins, lipids, mRNA, and miRNA. There is increasing evidence that EVs have various roles in regulating migration, invasion, stemness, survival, and immune functions. Previously, we have found that EVs from Kaposi's sarcoma-associated herpesvirus (KSHV)-infected human endothelial cells have the potential to activate the complement system. Although many studies have shown that the physical properties of EVs can be changed by their storage condition, there have been few studies for the stability of biological activity of EVs in various storage conditions. In this study, we investigated various conditions to identify the best conditions to store EVs with functional stability for 25 d. Furthermore, the correlation between the function and other characteristics of EVs, including the expression of EV markers, size distribution, and particle number, were also analyzed. Our results demonstrated that storage temperature is an important factor to maintain the activity of EVs and would be useful information for basic research and clinical application using EVs.

Atmospheric Tracer Depletion Testing for Unfiltered Air In-Leakage Determination at the Wolf Creek Nuclear Power Plant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, T. M.; Wilke, R. J.; Roberts, T.

Atmospheric Tracer Depletion tests were conducted at the Wolf Creek Nuclear Power Plant to quantify the unfiltered in-leakage (UI) into the Control Room (CR), Control Building (CB), and Equipment Rooms (ER) at the Wolf Creek Nuclear Power Plant. Wolf Creek has two independent charcoal filter Emergency Ventilation Systems (EVS) that can be used to purify air entering the control building and control room. The Bravo System contains a filtration system in Room 1501 in the Auxiliary Building for the Control Room and another filtration system (FGK02B) on Elevation 2016 for the Control Building. The Alpha system contains a filtration systemmore » in Room 1512 in the Auxiliary Building for the Control Room and another filtration system (FGK02A) on Elevation 2016 for the Control Building. The Atmospheric Tracer Depletion (ATD) test is a technique to measure in-leakage using the concentration of perfluorocarbon compounds that have a constant atmospheric background. These levels are present in the Control Room and Control Building under normal operating conditions. When air is supplied by either of the EVS, most of the PFTS are removed by the charcoal filters. If the concentrations of the PFTs measured in protected areas are the same as the levels at the output of the EVS, the in-leakage of outside air into the protected area would be zero. If the concentration is higher in the protected area than at the output of the filter system, there is in-leakage and the in-leakage can be quantified by the difference. Sampling was performed using state-of-the-art Brookhaven Atmospheric Tracer Samplers (BATS) air sampling equipment and analysis performed on Brookhaven National Laboratory (BNL) dedicated PFT analytical systems. In the Alpha test two tracers PMCH and mcPDCH were used to determine in-leakage into the control building. The analytical system was tuned to maximize sensitivity after initial analysis of the Alpha test. The increased sensitivity permitted accurate quantification of five isomers of the PFT PDCH (mtPDCH, pcPDCH, otPDCH, mcPDCH, and ptPDCH). These isomers were quantified in the low concentration samples in the Alpha test and in all samples in the Bravo test. The best estimates of UI (Rui) for the four zones are provided in Table ES-1. For the CB, this estimate averages the four tracers at the four elevations. For the CR, this estimate uses the four sampling units located in the Control Room.« less

Atmospheric Tracer Depletion Testing for Unfiltered Air In-Leakage Determination at the Wolf Creek Nuclear Power Plant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, T. M.; Wilke, R. J.; Roberts, T.

Atmospheric Tracer Depletion tests were conducted at the Wolf Creek Nuclear Power Plant to quantify the unfiltered in-leakage (UI) into the Control Room (CR), Control Building (CB), and Equipment Rooms (ER) at the Wolf Creek Nuclear Power Plant. Wolf Creek has two independent charcoal filter Emergency Ventilation Systems (EVS) that can be used to purify air entering the control building and control room. The Bravo System contains a filtration system in Room 1501 in the Auxiliary Building for the Control Room and another filtration system (FGK02B) on Elevation 2016 for the Control Building. The Alpha system contains a filtration systemmore » in Room 1512 in the Auxiliary Building for the Control Room and another filtration system (FGK02A) on Elevation 2016 for the Control Building.The Atmospheric Tracer Depletion (ATD) test is a technique to measure in-leakage using the concentration of perfluorocarbon compounds that have a constant atmospheric background. These levels are present in the Control Room and Control Building under normal operating conditions. When air is supplied by either of the EVS, most of the PFTS are removed by the charcoal filters. If the concentrations of the PFTs measured in protected areas are the same as the levels at the output of the EVS, the in-leakage of outside air into the protected area would be zero. If the concentration is higher in the protected area than at the output of the filter system, there is in-leakage and the in-leakage can be quantified by the difference.Sampling was performed using state-of-the-art Brookhaven Atmospheric Tracer Samplers (BATS) air sampling equipment and analysis performed on Brookhaven National Laboratory (BNL) dedicated PFT analytical systems. In the Alpha test two tracers PMCH and mcPDCH were used to determine in-leakage into the control building. The analytical system was tuned to maximize sensitivity after initial analysis of the Alpha test. The increased sensitivity permitted accurate quantification of five isomers of the PFT PDCH (mtPDCH, pcPDCH, otPDCH, mcPDCH, and ptPDCH). These isomers were quantified in the low concentration samples in the Alpha test and in all samples in the Bravo test.The best estimates of UI (Rui) for the four zones are provided in Table ES-1. For the CB, this estimate averages the four tracers at the four elevations. For the CR, this estimate uses the four sampling units located in the Control Room.« less

Observation of >400-eV precursor plasmas from low-wire-number copper arrays at the 1-MA zebra facility.

PubMed

Coverdale, C A; Safronova, A S; Kantsyrev, V L; Ouart, N D; Esaulov, A A; Deeney, C; Williamson, K M; Osborne, G C; Shrestha, I; Ampleford, D J; Jones, B

2009-04-17

Experiments with cylindrical copper wire arrays at the 1-MA Zebra facility show that high temperatures exist in the precursor plasmas formed when ablated wire array material accretes on the axis prior to the stagnation of a z pinch. In these experiments, the precursor radiated approximately 20% of the >1000 eV x-ray output, and time-resolved spectra show substantial emission from Cu L-shell lines. Modeling of the spectra shows an increase in temperature as the precursor forms, up to approximately 450 eV, after which the temperature decreases to approximately 220-320 eV until the main implosion.

Experimental room temperature hohlraum performance study on the National Ignition Facility [Experimental evidence for improved performance in room temperature hohlraums on the National Ignition Facility

DOE PAGES

Ralph, J. E.; Strozzi, D.; Ma, T.; ...

2016-12-29

Room temperature or “warm” (273 K) indirect drive hohlraum experiments have been conducted on the National Ignition Facility with laser energies up to 1.26 MJ and compared to similar cryogenic or “cryo” (~20 K) experiments. Warm experiments use neopentane (C 5H 12) as the low pressure hohlraum fill gas instead of helium, and propane (C 3H 8) to replace the cryogenic DT or DHe3 capsule fill. The increased average Z of the hohlraum fill leads to increased inverse bremsstrahlung absorption and an overall hotter hohlraum plasma in simulations. The cross beam energy transfer (CBET) from outer laser beams (pointed towardmore » the laser entrance hole) to inner beams (pointed at the equator) was inferred indirectly from measurements of Stimulated Raman Scattering (SRS). These experiments show that a similar hot spot self-emission shape can be produced with less CBET in warm hohlraums. The measured inner cone SRS reflectivity (as a fraction of incident power neglecting CBET) is ~2.5× less in warm than cryo shots with similar hot spot shapes, due to a less need for CBET. The measured outer-beam stimulated the Brillouin scattering power that was higher in the warm shots, leading to a ceiling on power to avoid the optics damage. These measurements also show that the CBET induced by the flow where the beams cross can be effectively mitigated by a 1.5 Å wavelength shift between the inner and outer beams. A smaller scale direct comparison indicates that warm shots give a more prolate implosion than cryo shots with the same wavelength shift and pulse shape. Lastly, the peak radiation temperature was found to be between 5 and 7 eV higher in the warm than the corresponding cryo experiments after accounting for differences in backscatter.« less

Experimental room temperature hohlraum performance study on the National Ignition Facility [Experimental evidence for improved performance in room temperature hohlraums on the National Ignition Facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ralph, J. E.; Strozzi, D.; Ma, T.

Room temperature or “warm” (273 K) indirect drive hohlraum experiments have been conducted on the National Ignition Facility with laser energies up to 1.26 MJ and compared to similar cryogenic or “cryo” (~20 K) experiments. Warm experiments use neopentane (C 5H 12) as the low pressure hohlraum fill gas instead of helium, and propane (C 3H 8) to replace the cryogenic DT or DHe3 capsule fill. The increased average Z of the hohlraum fill leads to increased inverse bremsstrahlung absorption and an overall hotter hohlraum plasma in simulations. The cross beam energy transfer (CBET) from outer laser beams (pointed towardmore » the laser entrance hole) to inner beams (pointed at the equator) was inferred indirectly from measurements of Stimulated Raman Scattering (SRS). These experiments show that a similar hot spot self-emission shape can be produced with less CBET in warm hohlraums. The measured inner cone SRS reflectivity (as a fraction of incident power neglecting CBET) is ~2.5× less in warm than cryo shots with similar hot spot shapes, due to a less need for CBET. The measured outer-beam stimulated the Brillouin scattering power that was higher in the warm shots, leading to a ceiling on power to avoid the optics damage. These measurements also show that the CBET induced by the flow where the beams cross can be effectively mitigated by a 1.5 Å wavelength shift between the inner and outer beams. A smaller scale direct comparison indicates that warm shots give a more prolate implosion than cryo shots with the same wavelength shift and pulse shape. Lastly, the peak radiation temperature was found to be between 5 and 7 eV higher in the warm than the corresponding cryo experiments after accounting for differences in backscatter.« less

Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jia, Roger; Zhu, Tony; Bulović, Vladimir; Fitzgerald, Eugene A.

2018-05-01

III-IV-V heterovalent alloys have the potential to satisfy the need for infrared bandgap materials that also have lattice constants near GaAs. In this work, significant room temperature photoluminescence is reported for the first time in high quality III-IV-V alloys grown by metalorganic chemical vapor deposition. Pronounced phase separation, a characteristic suspected to quench luminescence in the alloys in the past, was successfully inhibited by a modified growth process. Small scale composition fluctuations were observed in the alloys; higher growth temperatures resulted in fluctuations with a striated morphology, while lower growth temperatures resulted in fluctuations with a speckled morphology. The composition fluctuations cause bandgap narrowing in the alloys—measurements of various compositions of (GaAs)1-x(Ge2)x alloys reveal a maximum energy transition of 0.8 eV under 20% Ge composition rather than a continuously increasing transition with the decreasing Ge composition. Additionally, luminescence intensity decreased with the decreasing Ge composition. The alloys appear to act as a Ge-like solid penetrating a GaAs lattice, resulting in optical properties similar to those of Ge but with a direct-bandgap nature; a decrease in the Ge composition corresponds to a reduction in the light-emitting Ge-like material within the lattice. An energy transition larger than 0.8 eV was obtained through the addition of silicon to the (GaAs)1-x(Ge2)x alloy. The results indicate significant promise for III-IV-V alloys as potential materials for small bandgap optical devices with previously unachievable lattice constants.

Standing Up to Abuse.

ERIC Educational Resources Information Center

Wood, Heather

2002-01-01

Describes how barracks renovations at West Point have included the replacement of privacy partitions and screens in restrooms and locker rooms with items of high-density polyethylene (HDPE), which is more durable than metal. (EV)

Atomistic modeling of the solid-state chemistry of actinide materials

NASA Astrophysics Data System (ADS)

Shuller, Lindsay C.

Materials that incorporate actinides are critical to the nuclear fuel cycle, either as nuclear fuels or nuclear waste forms. In this thesis, I examine four materials: i) ThO2-UO2 solid solutions, ii) binary ThO2-CeO2-ZrO2 solid solutions, iii) Np-doped studtite, iv) Np-doped boltwoodite. Computational methods, particularly density functional theory (DFT) calculations and Monte-Carlo (MC) simulations, are used to determine the energetics and structures of these actinide-bearing materials. The solid-solution behavior of nuclear fuels and nuclear waste forms indicate the thermodynamic stability of the material, which is important for understanding the in-reactor fuel properties and long-term stability of used fuel. The ThxU1-xO2 and ThxCe 1-xO2 binaries are almost completely miscible; however, DeltaGmix reveals a small tendency for the systems to exsolve (e.g., DeltaEexsoln(Th xU1-xO2) = 0.13 kJ/(mol cations) at 750 K). Kinetic hindrances (e.g., interfacial energy) may inhibit exsolution, especially at the low temperatures necessary to stabilize the nanoscale exsolution lamellae observed in the ThxU1-xO2 and Ce xZr1-xO2 binaries. Miscibility in the Zr-bearing binaries is limited. At 1400 °C, only 3.6 and 0.09 mol% ZrO2 is miscible in CeO2 and ThO2, respectively. The incorporation of minor amounts of Np5+,6+ into uranium alteration phases, e.g., studtite [UO2O2 (H2O)4] or boltwoodite [K(UO2)(SiO 3OH)(H2O)1.5] , may limit the mobility of aqueous neptunyl complexes released from oxidized nuclear fuels. Np6+-incorporation into studtite requires less energy than Np5+-incorporation (e.g., with source/sink = Np2O5/UO 3 DeltaEincorp(Np6+) = 0.42 eV and DeltaEincorp(Np5+) = 1.12 eV). In addition, Np6+ is completely miscible in studtite at room temperature with respect to a hypothetical Np6+-studtite. Electronic structure calculations provide insight into Np-bonding in studtite. The Np 5f orbitals are within the band gap of studtite, resulting in the narrowing of the band gap from 2.29 eV for studtite to 1.09 eV for Np-incorporated studtite. Three charge-balancing mechanisms for the substitution of Np5+ for U6+ were compared: i) addition of H+ [DeltaEincorp(bolt) = 0.79 eV; DeltaEincorp(stud) = 1.12 eV], ii) interlayer coupled substitution [DeltaEincorp (bolt) = 1.40 eV], iii) intra-layer coupled-substitution [DeltaEincorp(bolt) = 0.86 eV]. Solid-solution calculations of the intra-layer coupled-substitution mechanism, where Np 5+ and P5+ substitute for U6+ and Si 4+, predict an incorporation limit of 585 ppm at 300 °C.

Understanding the transport properties of YNiBi half- Heusler alloy: An Ab-initio study

NASA Astrophysics Data System (ADS)

Sharma, Sonu; Kumar, Pradeep

2017-05-01

In the present work, we have studied the electronic and transport properties of YNiBi half-Heusler alloy by combining the first principles methods with the Boltzmann transport theory. The electronic band structure and total density of states plot suggest the presence of semiconducting ground state in the compound. The value of indirect band gap is found to be ˜0.21 eV. The origin of the band gap is associated primarily with the interaction between the Ni 3d and the Y 4d states. The room temperature value of Seebeck coefficient is ˜230 µVK-1. A moderate power factor of about 12×1014 μ Wcm-1 K-2 s-1 is obtained at 980 k.

Flexible IGZO Schottky diodes on paper

NASA Astrophysics Data System (ADS)

Kaczmarski, Jakub; Borysiewicz, Michał A.; Piskorski, Krzysztof; Wzorek, Marek; Kozubal, Maciej; Kamińska, Eliana

2018-01-01

With the development of novel device applications, e.g. in the field of robust and recyclable paper electronics, came an increased demand for the understanding and control of IGZO Schottky contact properties. In this work, a fabrication and characterization of flexible Ru-Si-O/IGZO Schottky barriers on paper is presented. It is found that an oxygen-rich atomic composition and microstructure of Ru-Si-O containing randomly oriented Ru inclusions with diameter of 3-5 nm embedded in an amorphous SiO2 matrix are effective in preventing interfacial reactions in the contact region, allowing to avoid pre-treatment of the semiconductor surface and fabricate reliable diodes at room temperature characterized by Schottky barrier height and ideality factor equal 0.79 eV and 2.13, respectively.

A new silicon phase with direct band gap and novel optoelectronic properties

DOE PAGES

Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; ...

2015-09-23

Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~10 4 cm/V · s) at room temperature and a low mass density (1.71 g/cm 3), making it amore » promising material for optoelectronic applications.« less

Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

NASA Astrophysics Data System (ADS)

Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

2018-06-01

We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

Surface potential barrier in m-plane GaN studied by contactless electroreflectance

NASA Astrophysics Data System (ADS)

Janicki, Lukasz; Misiewicz, Jan; Cywiński, Grzegorz; Sawicka, Marta; Skierbiszewski, Czeslaw; Kudrawiec, Robert

2016-02-01

Contactless electroreflectance (CER) is used to study the surface potential barrier in m-plane GaN UN+ [GaN (d = 20,30,50,70 nm)/GaN:Si] structures grown by using molecular beam epitaxy. Clear bandgap-related transitions followed by Franz-Keldysh oscillations (FKO) have been observed in the CER spectra of all samples at room temperature. The built-in electric fields in the undoped cap layers have been determined from the FKO period. From the built-in electric field and the undoped GaN layer thickness, the Fermi level location at the air-exposed m-plane GaN surface has been estimated as 0.42 ± 0.05 eV below the conduction band.

Straight and chopped DC performance data for a reliance EV-250AT motor with a General Electric EV-1 controller

NASA Technical Reports Server (NTRS)

Edie, P. C.

1981-01-01

Straight and chopped DC motor performances for a Reliance EV-250AT motor with an EV-1 controller were examined. Effects of motor temperature and operating voltage are shown. It is found that the maximum motor efficiency is approximately 85% at low operating temperatures in the straight DC mode. Chopper efficiency is 95% under all operating conditions. For equal speeds, the motor operated in the chopped mode develops slightly more torque and draws more current than it does in the straight DC mode.

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Jin, Qiao; Zheng, Chunyan; Zhang, Yongcheng; Lu, Chaojing; Li, Qiang; Li, Shandong; Dai, Jiyan; Wen, Zheng

2017-09-01

Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3 barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3 device exhibits a giant ROFF/RON resistance ratio of ˜3 × 105 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ˜0.93 eV and room-temperature retention time of ˜70 years can be extracted.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.

PubMed

Chizh, Kirill V; Chapnin, Valery A; Kalinushkin, Victor P; Resnik, Vladimir Y; Storozhevykh, Mikhail S; Yuryev, Vladimir A

2013-04-17

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22â"ƒ to 70â"ƒ; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%â"ƒ to 0.6%/â"ƒ for forward bias and around 2.5%/â"ƒ for reverse bias of the diodes.

Influence of precursor concentration on physical properties of CdO thin films prepared by spray pyrolysis technique using nebulizer

NASA Astrophysics Data System (ADS)

Anitha, M.; Amalraj, L.; Anitha, N.

2017-12-01

Cadmium oxide (CdO) thin films were prepared with different concentrations of precursor solution (0.05, 0.1, 0.15, 0.2 and 0.25 M, respectively) at the optimized temperature (200 °C) using the nebulized spray pyrolysis technique to obtain better crystallinity in polycrystalline thin films on amorphous glass substrates. The XRD characterization of those samples revealed a preferential orientation along the (111) plane having a cubic structure. The scanning electron microscopy (SEM) analysis displayed that all the as-deposited thin films have spherical shaped grains. The transmittance of the as-deposited CdO thin films had decreased from 88 to 71% for longer wavelength regions (600-900 nm) as the precursor concentration had increased and then increased for higher precursor concentration. The optical band gap was found to lie between 2.45 and 2.40 eV belonging to direct transition for those thin films. The presence of Cd-O bond (540 cm-1) was confirmed by FTIR spectrum. The emission properties of CdO thin films were studied by luminescence spectrum recorded at room temperature. A maximum carrier concentration and minimum resistivity values of 4.743 × 1019 cm- 3 and 1.06 × 10-3 Ω-cm, respectively, were obtained for 0.2 M precursor concentration. These CdO thin films have high optical transmittance and high room temperature conductivity, which can be used as the TCO and Solar cell (window layer) material.

Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

2016-08-28

Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

Low-temperature anneal of the divacancy in p-type silicon: A transformation from V2 to VxOy complexes?

NASA Astrophysics Data System (ADS)

Trauwaert, M.-A.; Vanhellemont, J.; Maes, H. E.; Van Bavel, A.-M.; Langouche, G.; Clauws, P.

1995-05-01

Deep level transient spectroscopy of electron irradiated p-type silicon reveals a defect level at Ev+0.19 eV, which during anneal treatments at 200 °C gradually transforms into a band with Ev+0.24 eV. Both energy levels however, are reported in literature to be the donor level of the divacancy. In the present study it is proposed that during the low-temperature anneal the divacancy interacts with oxygen, forming a V2O complex. During heat treatments at temperatures in the range between 250 and 450 °C a further shift of the deep level to higher energy positions is observed which might be related with other vacancy-oxygen complexes.

Temperature dependence of the dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 1.0-8.5 eV

NASA Astrophysics Data System (ADS)

Sturm, C.; Schmidt-Grund, R.; Zviagin, V.; Grundmann, M.

2017-08-01

The full dielectric tensor of monoclinic Ga2O3 (β-phase) was determined by generalized spectroscopic ellipsometry in the spectral range from 1.0 eV up to 8.5 eV and temperatures in the range from 10 K up to 300 K. By using the oriented dipole approach, the energies and broadenings of the excitonic transitions are determined as a function of the temperature, and the exciton-phonon coupling properties are deduced.

Studies on structural, optical, thermal and vibrational properties of thienyl chalcone derivative: 1-(4-Nitrophenyl)-3-(2-thienyl)prop-2-en-1-one

NASA Astrophysics Data System (ADS)

de Toledo, T. A.; da Costa, R. C.; Bento, R. R. F.; Al-Maqtari, H. M.; Jamalis, J.; Pizani, P. S.

2018-03-01

The structural, optical, thermal and vibrational properties of thienyl chalcone derivative 1-(4-Nitrophenyl)-3-(2-thienyl)prop-2-en-1-one, C13H9NO3S were investigated combining nuclear magnetic resonance (1H and 13C NMR), X-ray diffraction (XRD), Fourier transform infrared (FTIR), UV-vis spectroscopy at room temperature assisted by density functional theory (DFT) calculations and Raman scattering at the temperature range 303-463 K. The electronic properties, including excitation energies, oscillator strengths, HOMO and LUMO energies were calculated by time-dependent DFT (TD-DFT) to complement the experimental findings. The B3LYP/6-311G (d,p) (B3LYP/cc-pVTZ) calculations led to the identification of 'two minima on the molecules' potential energy surfaces. From these calculations, it was predicted that the most stable conformer for C13H9NO3S in the gas phase is founded at 0 K relationship to dihedral angle C8sbnd C9sbnd C10sbnd S1, in agreement with XRD results. The molecular plot showed that the electrical charge mobility in the molecule occurs from thiophene to benzene ring. The optical band gap energy calculated from the difference between HOMO and LUMO orbitals was founded to be ∼3.87 (3.82) eV, in close agreement with the experimental value of 2.94 eV. The comparison between experimental and theoretical vibrational spectra gives a precise knowledge of the fundamental vibrational modes and leads to a better interpretation of the experimental Raman and infrared spectra. As temperature increases from room temperature to 443 K, it was observed the current phonon anharmonicity effects associated to changes in the Raman line intensities, line-widths and red-shift, in special in the external modes region, whereas the internal modes region remains almost unchanged due its strong chemical bonds. Furthermore, C13H9NO3S goes to phase transition in the temperature range 453-463 K. This thermal phenomenon was attributed to the disappearance of the lattice (∼10-200 cm-1) and molecular (∼300-4000 cm-1) modes in the Raman spectra. Finally, the vibrational mode assignment given in terms of potential energy distribution (PED) analysis leads to a more comprehensive interpretation of the vibrational spectra and origin of instability the investigated material.

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

Beth-Uhlenbeck approach for repulsive interactions between baryons in a hadron gas

NASA Astrophysics Data System (ADS)

Vovchenko, Volodymyr; Motornenko, Anton; Gorenstein, Mark I.; Stoecker, Horst

2018-03-01

The quantum mechanical Beth-Uhlenbeck (BU) approach for repulsive hard-core interactions between baryons is applied to the thermodynamics of a hadron gas. The second virial coefficient a2—the "excluded volume" parameter—calculated within the BU approach is found to be temperature dependent, and it differs dramatically from the classical excluded volume (EV) model result. At temperatures T =100 -200 MeV, the widely used classical EV model underestimates the EV parameter for nucleons at a given value of the nucleon hard-core radius by large factors of 3-4. Previous studies, which employed the hard-core radii of hadrons as an input into the classical EV model, have to be re-evaluated using the appropriately rescaled EV parameters. The BU approach is used to model the repulsive baryonic interactions in the hadron resonance gas (HRG) model. Lattice data for the second- and fourth-order net baryon susceptibilities are described fairly well when the temperature dependent BU baryonic excluded volume parameter corresponds to nucleon hard-core radii of rc=0.25 -0.3 fm. Role of the attractive baryonic interactions is also considered. It is argued that HRG model with a constant baryon-baryon EV parameter vN N≃1 fm3 provides a simple yet efficient description of baryon-baryon interaction in the crossover temperature region.

Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

NASA Astrophysics Data System (ADS)

Yıldırım, M.; Şahin, C.; Altındal, Ş.; Durmuş, P.

2017-03-01

An Au/Bi4Ti3O12/ n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi4Ti3O12 interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage ( V) range of -4 V and 6 V. Capacitance ( C) and conductance ( G/ω) measurements were carried out in a wide temperature range of 120-380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C -2- V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (˜1012 eV-1 cm-2) was obtained for surface states ( N ss); however, N ss first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as ˜10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi4Ti3O12/ n-Si SBD.

H+ diffusion and electrochemical stability of Li1+x+yAlxTi2-xSiyP3-yO12 glass in aqueous Li/air battery electrolytes

NASA Astrophysics Data System (ADS)

Ding, Fei; Xu, Wu; Shao, Yuyan; Chen, Xilin; Wang, Zhiguo; Gao, Fei; Liu, Xingjiang; Zhang, Ji-Guang

2012-09-01

It is well known that LATP (Li1+x+yAlxTi2-xSiyP3-yO12) glass is a good lithium (Li)-ion conductor. However, the interaction between LATP glass and H+ ions in aqueous electrolytes (including the diffusion and surface adsorption of H+ ions) needs to be well understood before the long-term application of LATP glass in an aqueous electrolyte can be realized. In this work, we investigate H+-ion diffusion in LATP glass and their interactions with the glass surface using both experimental and modeling approaches. Our results indicate that the apparent H+-related current observed in the initial cyclic voltammetry scan should be attributed to the adsorption of H+ ions on the LATP glass rather than the bulk diffusion of H+ ions. Furthermore, density functional theory calculations indicate that the H+-ion diffusion energy barrier (3.21 eV) is much higher than that for Li+ ions (0.79 eV) and Na+ ions (0.79 eV) in a NASICON-type LiTi2(PO4)3 material. As a result, H+-ion conductivity in LATP glass is negligible at room temperature. However, significant surface corrosion was found after the LATP glass in a strong alkaline electrolyte. Therefore, to prevent LATP glass from corrosion, appropriate electrolytes must be developed for long-term operation of LATP in aqueous Li-air batteries.

Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

NASA Astrophysics Data System (ADS)

Omotoso, Ezekiel; Meyer, Walter E.; Auret, F. Danie; Paradzah, Alexander T.; Legodi, Matshisa J.

2016-03-01

Deep-level transient spectroscopy (DLTS) and Laplace-DLTS were used to investigate the effect of alpha-particle irradiation on the electrical properties of nitrogen-doped 4H-SiC. The samples were bombarded with alpha-particles at room temperature (300 K) using an americium-241 (241Am) radionuclide source. DLTS revealed the presence of four deep levels in the as-grown samples, E0.09, E0.11, E0.16 and E0.65. After irradiation with a fluence of 4.1 × 1010 alpha-particles-cm-2, DLTS measurements indicated the presence of two new deep levels, E0.39 and E0.62 with energy levels, EC - 0.39 eV and EC - 0.62 eV, with an apparent capture cross sections of 2 × 10-16 and 2 × 10-14 cm2, respectively. Furthermore, irradiation with fluence of 8.9 × 1010 alpha-particles-cm-2 resulted in the disappearance of shallow defects due to a lowering of the Fermi level. These defects re-appeared after annealing at 300 °C for 20 min. Defects, E0.39 and E0.42 with close emission rates were attributed to silicon or carbon vacancy and could only be separated by using high resolution Laplace-DLTS. The DLTS peaks at EC - (0.55-0.70) eV (known as Z1/Z2) were attributed to an isolated carbon vacancy (VC).

Tungsten oxide thin film exposed to low energy D and He plasma: evidence for a thermal enhancement of the erosion yield

NASA Astrophysics Data System (ADS)

Hijazi, Hussein; Martin, C.; Roubin, P.; Addab, Y.; Cabie, C.; Pardanaud, C.; Bannister, M.; Meyer, F.

2017-10-01

Nanocrystalline tungsten oxide thin films (25 nm - 250 nm thickness) produced by thermal oxidation of a tungsten substrate were exposed to low energy D and He plasma. Low energy D plasma exposure (11 eV/D+) of these films have resulted in the formation of a tungsten bronze (DxWO3) clearly observed by Raman microscopy. D plasma bombardment (4 1021 m-2) has also induced a color change of the oxide layer which is similar to the well-known electro-chromic effect and has been named ``plasma-chromic effect''. To unravel physical and chemical origins of the modifications observed under exposure, similar tungsten oxide films were also exposed to low energy helium plasma (20 eV/He+) . Due to the low fluence (4 1021 m-2) and low ion energy (20 eV), at room temperature, He exposure has induced only very few morphological and structural modifications. On the contrary, at 673 K, significant erosion is observed, which gives evidence for an unexpected thermal enhancement of the erosion yield. We present here new results concerning He beam exposures at low fluence (4 1021 m-2) varying the He+ energy from 20 eV to 320 eV to measure the tungsten oxide sputtering threshold energy. Detailed analyses before/after exposure to describe the D and He interaction with the oxide layer, its erosion and structural modification at the atomic and micrometer scale will be presented.

Possibility to Use Hydrothermally Synthesized CuFeS2 Nanocomposite as an Acceptor in Hybrid Solar Cell

NASA Astrophysics Data System (ADS)

Sil, Sayantan; Dey, Arka; Halder, Soumi; Datta, Joydeep; Ray, Partha Pratim

2018-01-01

Here we have approached the plausible use of CuFeS2 nanocomposite as an acceptor in organic-inorganic hybrid solar cell. To produce CuFeS2 nanocomposite, hydrothermal strategy was employed. The room-temperature XRD pattern approves the synthesized material as CuFeS2 with no phase impurity (JCPDS Card no: 37-0471). The elemental composition of the material was analyzed from the TEM-EDX data. The obtained selected area electron diffraction (SAED) planes harmonized with the XRD pattern of the synthesized product. Optical band gap (4.14 eV) of the composite from UV-Vis analysis depicts that the synthesized material is belonging to wide band gap semiconductor family. The HOMO (- 6.97 eV) and LUMO (- 2.93 eV) positions from electrochemical study reveal that there is a possibility of electron transfer from MEH-PPV to CuFeS2. The optical absorption and photoluminescence spectra of MEH-PPV:CuFeS2 (donor:acceptor) composite were recorded sequentially by varying weight ratios. The monotonic blue shifting of the absorption peak position indicated the interaction between donor and acceptor materials. The possibility of electron transfer from donor (MEH-PPV) to acceptor (CuFeS2) was approved with photoluminescence analysis. Subsequently, we have fabricated a hybrid solar cell by incorporating CuFeS2 nanocomposite with MEH-PPV in open atmosphere and obtained 0.3% power conversion efficiency.

Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon for Generation Of Spin-Polarized Carriers

NASA Astrophysics Data System (ADS)

Malladi, Machara Krishna Girish

Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H+(range: 850 nm; dose: 1.5x1016 cm-2) and Ni+ (range: 60 nm; dose: 2x10 15 cm-2). Following annealing, the H implanted region populated with Ni nanoparticles of size ( 10-25 nm) and density ( 1011/cm2) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 ?C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a defect-free crystalline Si layer exhibit a very high magnetic switching energy barrier of 0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment. The electrical transport properties of the samples exhibiting room temperature ferromagnetism have been measured in an in-plane magnetic field and these samples show a high room temperature magnetoresistance ( 155% at 9T for p-Si and 80% at 9T for n-Si) which is dependent on the temperature and the applied current. The peak in the magnetoresistance occurs in the ohmic regime, where the inhomogeneity is the least in these samples measured. Such magnetoresistance has been attributed to the spin-dependent of splitting of the bands in the presence of magnetic nanoparticles with large moments and Schottky junction properties. A large spin-splitting (on the order of 100-150 meV in p-Si and 65-80 meV in n-Si) has been estimated along with large g-factor of 87 (p-Si) and 40 (n-Si). The spin polarization values based on these measurements has been estimated to be 99.6% in p-Si and 95.70% in n-Si at room temperature. Such large spin polarization values show a great promise for this material system to be the base material for the demonstration of a Si-based room temperature spintronic device.

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

NASA Astrophysics Data System (ADS)

Zhang, Z.; Farzana, E.; Sun, W. Y.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Kyle, E. C. H.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2015-10-01

The impact of annealing of proton irradiation-induced defects in n-type GaN devices has been systematically investigated using deep level transient and optical spectroscopies. Moderate temperature annealing (>200-250 °C) causes significant reduction in the concentration of nearly all irradiation-induced traps. While the decreased concentration of previously identified N and Ga vacancy related levels at EC - 0.13 eV, 0.16 eV, and 2.50 eV generally followed a first-order reaction model with activation energies matching theoretical values for NI and VGa diffusion, irradiation-induced traps at EC - 0.72 eV, 1.25 eV, and 3.28 eV all decrease in concentration in a gradual manner, suggesting a more complex reduction mechanism. Slight increases in concentration are observed for the N-vacancy related levels at EC - 0.20 eV and 0.25 eV, which may be due to the reconfiguration of other N-vacancy related defects. Finally, the observed reduction in concentrations of the states at EC - 1.25 and EC - 3.28 eV as a function of annealing temperature closely tracks the detailed recovery behavior of the background carrier concentration as a function of annealing temperature. As a result, it is suggested that these two levels are likely to be responsible for the underlying carrier compensation effect that causes the observation of carrier removal in proton-irradiated n-GaN.

Transparent conducting ZnO-CdO mixed oxide thin films grown by the sol-gel method.

PubMed

Pathak, Trilok K; Rajput, Jeevitesh K; Kumar, Vinod; Purohit, L P; Swart, H C; Kroon, R E

2017-02-01

Mixed oxides of zinc and cadmium with different proportions were deposited on ordinary glass substrates using the sol-gel spin coating method under optimized deposition conditions using zinc acetate dihydrate and cadmium acetate dihydrate as precursors. X-ray diffraction patterns confirmed the polycrystalline nature of the films. A combination of cubic CdO and hexagonal wurtzite ZnO phases was observed. The oxidation states of Zn, Cd and O in the deposited films were determined by X-ray photoelectron spectroscopic studies. Surface morphology was studied by scanning electron microscopy and atomic force microscopy. The compositional analysis of the thin films was studied by secondary ion mass spectroscopy. The transmittance of the thin films was measured in the range 300-800nm and the optical bandgap was calculated using Tauc's plot method. The bandgap decreased from 3.15eV to 2.15eV with increasing CdO content. The light emission properties of the ZnO:CdO thin films were studied by photoluminescence spectra recorded at room temperature. The current-voltage characteristics were also assessed and showed ohmic behaviour. The resistance decreased with increasing CdO content. Copyright © 2016 Elsevier Inc. All rights reserved.

The electronic structure of Bi 2.0Sr 1.8La 0.3Ca 0.8Cu 2.1O 8+δ superconductors studied using ultraviolet and X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Lindberg, P. A. P.; Shen, Z.-X.; Dessau, D. S.; Wells, B. O.; Borg, A.; Ellis, W.; Mitzi, D. B.; Lindau, I.; Spicer, W. E.; Kapitulnik, A.

1989-07-01

Photoemission measurements on single crystals of La-doped 2212 (Bi 2.0Sr 1.8La 0.3Ca 0.8Cu 2.1O 8+δ) superconductors were carried out utilizing both synchrotron and Al K α (1486.6 eV) radiation. A quantitative analysis of the photoemission data in comparison with similar data for the undoped 2212 material indicates that the La atoms preferentially occupy the Sr sites in the SrO layer next to the BiO plane. Evidence of alternation of the electronic environment of the Bi atoms is found in the Bi 5d core level spectra which show a shoulder at ≈ 1.2 eV higher binding energy, presumably due to the partial substitution of trivalent La ions (La 3+) for divalent Sr ions (Sr 2+). As for the undoped 2212 material, the photoemission spectra reveal a clear Fermi level cut-off at room temperature, single component O ls core level emission, and a Cu 2p satellite to main line intensity ratio of 0.4.

Synthesis and evaluation of optical and antimicrobial properties of Ag-SnO2 nanocomposites

NASA Astrophysics Data System (ADS)

Kumar Nair, Kishore; Kumar, Promod; Kumar, Vinod; Harris, R. A.; Kroon, R. E.; Viljoen, Bennie; Shumbula, P. M.; Mlambo, M.; Swart, H. C.

2018-04-01

We report on the sol-gel based room temperature synthesis of undoped SnO2 and Ag-SnO2 nanostructures. The synthesized nanostructures were characterized by Fourier transform infrared spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, High-resolution transmission electron microscopy (HR-TEM) and UV-visible spectroscopy. The XRD pattern confirmed that the obtained nanostructures have a tetragonally rutile structure. No extra phase changes were observed after Ag doping. UV-visible spectroscopy measurements indicated that the band gap of 3.59 eV for pure SnO2 nanostructures, decreased to 3.39 eV after doping. TEM analysis showed that no regular shape morphology existed and some rod-shaped particles were also detected in the nanostructures. The antibacterial activity of the nanostructures against E. coli was evaluated and a continuous decrease of microbial count was observed. The microbial population decreased from 6 × 105 cfu/ml to 7 × 104 cfu/ml and 5 × 104 cfu/ml on SnO2 and Ag-SnO2 treatments, respectively. Thus, the nanostructures can be used for the biorational management of E. coli for waste water treatment before discharge.

Ab-initio Computation of the Electronic, transport, and Bulk Properties of Calcium Oxide.

NASA Astrophysics Data System (ADS)

Mbolle, Augustine; Banjara, Dipendra; Malozovsky, Yuriy; Franklin, Lashounda; Bagayoko, Diola

We report results from ab-initio, self-consistent, local Density approximation (LDA) calculations of electronic and related properties of calcium oxide (CaO) in the rock salt structure. We employed the Ceperley and Alder LDA potential and the linear combination of atomic orbitals (LCAO) formalism. Our calculations are non-relativistic. We implemented the LCAO formalism following the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). The BZW-EF method involves a methodical search for the optimal basis set that yields the absolute minima of the occupied energies, as required by density functional theory (DFT). Our calculated, indirect band gap of 6.91eV, from towards the L point, is in excellent agreement with experimental value of 6.93-7.7eV, at room temperature (RT). We have also calculated the total (DOS) and partial (pDOS) densities of states as well as the bulk modulus. Our calculated bulk modulus is in excellent agreement with experiment. Work funded in part by the US Department of Energy (DOE), National Nuclear Security Administration (NNSA) (Award No.DE-NA0002630), the National Science Foundation (NSF) (Award No, 1503226), LaSPACE, and LONI-SUBR.

Morphology, structure and optical properties of hydrothermally synthesized CeO2/CdS nanocomposites

NASA Astrophysics Data System (ADS)

Mohanty, Biswajyoti; Nayak, J.

2018-04-01

CeO2/CdS nanocomposites were synthesized using a two-step hydrothermal technique. The effects of precursor concentration on the optical and structural properties of the CeO2/CdS nanoparticles were systematically studied. The morphology, composition and the structure of the CeO2/CdS nanocomposite powder were studied by scanning electron microscopy (SEM), energy dispersive X-ray spectrum analysis (EDXA) and X-ray diffraction (XRD), respectively. The optical properties of CeO2/CdS nanocomposites were studied by UV-vis absorption and photoluminescence (PL) spectroscopy. The optical band gaps of the CeO2/CdS nanopowders ranged from 2.34 eV to 2.39 eV as estimated from the UV-vis absorption. In the room temperature photoluminescence spectrum of CeO2/CdS nanopowder, a strong blue emission band was observed at 400 nm. Since the powder shows strong visible luminescence, it may be used as a blue phosphor in future. The original article published with this DOI was submitted in error. The correct article was inadvertently left out of the original submission. This has been rectified and the correct article was published online on 16 April 2018.

Optical properties of pure and PbSe doped TiS2 nanodiscs

NASA Astrophysics Data System (ADS)

Parvaz, M.; Islamuddin; Khan, Zishan H.

2018-06-01

Titanium disulfide, being one of the popular transition-metal dichalcogenide (TMD) materials, shows wonderful properties owing to tunable optical band gap. Pure and PbSe doped titanium disulfide nanodiscs have been synthesized by solid-state reaction method. FESEM, TEM and Raman images confirm the synthesis of nanodiscs. XRD spectra suggest the polycrystalline structure of as-prepared as well as PbSe doped TiS2 nanodiscs. PL spectra of the as-synthesized nanodiscs has been studied in the wavelength range of (300–550 nm), at room temperature. The position of the peak shifts towards the lower wavelength (blue shift) and intensity of the PL increases after the doping of PbSe, which may be due to a broadening of the optical band gap. UV–vis spectra has been used to calculate optical band gap of pure and PbSe doped titanium disulfide nanodiscs. The calculated value are found to be 1.93 eV and 2.03 eV respectively. Various optical constants such as n and k have been calculated. The value of extinction coefficient (k) of pure and doped titanium disulfide increases while the value of the refractive index (n) decreases with increase in photon energy.

Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

NASA Astrophysics Data System (ADS)

Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

2006-05-01

Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

Gap state analysis in electric-field-induced band gap for bilayer graphene.

PubMed

Kanayama, Kaoru; Nagashio, Kosuke

2015-10-29

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not been conducted. Here, we report the systematic estimation of the energy gap by both quantum capacitance and transport measurements and the density of states for gap states by the conductance method. An energy gap of ~ 250 meV is obtained at the maximum displacement field of ~ 3.1 V/nm, where the current on/off ratio of ~ 3 × 10(3) is demonstrated at 20 K. The density of states for the gap states are in the range from the latter half of 10(12) to 10(13) eV(-1) cm(-2). Although the large amount of gap states at the interface of high-k oxide/bilayer graphene limits the current on/off ratio at present, our results suggest that the reduction of gap states below ~ 10(11) eV(-1) cm(-2) by continual improvement of the gate stack makes bilayer graphene a promising candidate for future nanoelectronic device applications.

Tunable UV-visible absorption of SnS2 layered quantum dots produced by liquid phase exfoliation.

PubMed

Fu, Xiao; Ilanchezhiyan, P; Mohan Kumar, G; Cho, Hak Dong; Zhang, Lei; Chan, A Sattar; Lee, Dong J; Panin, Gennady N; Kang, Tae Won

2017-02-02

4H-SnS 2 layered crystals synthesized by a hydrothermal method were used to obtain via liquid phase exfoliation quantum dots (QDs), consisting of a single layer (SLQDs) or multiple layers (MLQDs). Systematic downshift of the peaks in the Raman spectra of crystals with a decrease in size was observed. The bandgap of layered QDs, estimated by UV-visible absorption spectroscopy and the tunneling current measurements using graphene probes, increases from 2.25 eV to 3.50 eV with decreasing size. 2-4 nm SLQDs, which are transparent in the visible region, show selective absorption and photosensitivity at wavelengths in the ultraviolet region of the spectrum while larger MLQDs (5-90 nm) exhibit a broad band absorption in the visible spectral region and the photoresponse under white light. The results show that the layered quantum dots obtained by liquid phase exfoliation exhibit well-controlled and regulated bandgap absorption in a wide tunable wavelength range. These novel layered quantum dots prepared using an inexpensive method of exfoliation and deposition from solution onto various substrates at room temperature can be used to create highly efficient visible-blind ultraviolet photodetectors and multiple bandgap solar cells.

Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

NASA Astrophysics Data System (ADS)

Banerjee, Indrani; Mahapatra, Santosh K.; Pal, Chandana; Sharma, Ashwani K.; Ray, Asim K.

2018-05-01

Room temperature hydrogen plasma treatment on solution processed 300 nm graphene oxide (GO) films on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates has been performed by varying the plasma power between 20 W and 60 W at a constant exposure time of 30 min with a view to examining the effect of plasma power on reduction of GO. X-ray powder diffraction (XRD) and Raman spectroscopic studies show that high energy hydrogen species generated in the plasma assist fast exfoliation of the oxygenated functional groups present in the GO samples. Significant decrease in the optical band gap is observed from 4.1 eV for untreated samples to 0.5 eV for 60 W plasma treated samples. The conductivity of the films treated with 60 W plasma power is estimated to be six orders of magnitude greater than untreated GO films and this enhancement of conductivity on plasma reduction has been interpreted in terms of UV-visible absorption spectra and density functional based first principle computational calculations. Plasma reduction of GO/ITO/PET structures can be used for efficiently tuning the electrical and optical properties of reduced graphene oxide (rGO) for flexible electronics applications.

Relative electron affinity of C{sub 60} and C{sub 70} and the Stokes` law radius of the C{sub 70} radical anion in n-hexane by time-of-flight mobility measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burba, M.E.; Lim, S.K.; Albrecht, A.C.

The mobility of the C{sub 70} radical anion in n-hexane at room temperature has been measured by the condensed-phase thin-sheet time-of-flight (TOF) technique. The observed value of 5.2 x 10{sup -4} cm{sup 2}/(V s) corresponds to a Stokes radius of 5.4 A, consistent with the molecular geometry of the C{sub 70} molecule as determined by electron diffraction. TOF measurements of anionic mobility in n-hexane, where both C{sub 70} and C{sub 60} are present and compete for photoelectrons, show that the predominant anion changes from C{sub 70}{sup -} to C{sub 60}{sup -} as the C{sub 60} to C{sub 70} concentration ratiomore » is increased from 2 to 20. Quantitative analysis of these `competition experiments` shows that the electron affinity of C{sub 70} exceeds that of C{sub 60} by 0.025 {+-} 0.007 eV in n-hexane and (through a thermodynamic cycle) by 0.073 {+-} 0.019 eV in the gas phase. 18 refs., 4 figs.« less

Influence of europium (Eu3+) ions on the optical properties of boro tellurite glasses

NASA Astrophysics Data System (ADS)

Devaraja, C.; Gowda, G. V. Jagadeesha; Eraiah, B.

2018-05-01

The influence of Eu3+ ions on the Optical properties of Boro Tellurite Glasses of (70-x) B2O3-15TeO2-10Na2O- 5PbO-xEu2O3 with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 mol% glasses were prepared by conventional melt quenching method and their physical and optical properties were investigated by using UV absorption spectra, which was recorded at room temperature in the UV-visible region of wavelength 200-1100 nm. By the absorption edge studies, the values of optical bandgap energies have been evaluated. The direct and indirect bandgap values ranges between 3.362 to 3.650 eV and 2.011 to 2.863 eV respectively. The refractive index, molar refraction and polarizability of oxide ions have been calculated by using Lorentz-Lorentz relations. The refractive index and molar refraction values were ranges from 2.241 to 2.358 and 76.147 to 79.915 cm3 respectively. The non-linear variations of the above optical parameters were discussed with respect to small variation of europium (Eu3+) ion concentration.

Optical Properties and Junction Characteristics of 6-(5-Bromothiohen-2-yl)-2,3-Dihydro-1-Methyl-3-Oxo-2-Phenyl-1 H-Pyrazolo[4,3-b]Pyridine-5-Carbonitrile Films

NASA Astrophysics Data System (ADS)

Zedan, I. T.; El-Taweel, F. M. A.; Abu El-Enein, R. A. N.; Nawar, H. H.; El-Menyawy, E. M.

2016-11-01

In this study, 6-(5-bromothiohen-2-yl)-2,3-dihydro-1-methyl-3-oxo-2-phenyl-1 H-pyrazolo[4,3-b]pyridine-5-carbonitrile (BDPC) powder was synthesized. BDPC powder showed a polycrystalline structure, whereas the thermally evaporated films had an amorphous structure. The optical parameters such as absorption coefficient and refractive index were calculated in the spectral range 200-500 nm. Spectral distribution analysis of the absorption coefficient revealed that the films had an indirect band transitions with energy gaps of 2.57 eV and 3.5 eV. According to the single oscillator model, the oscillation energy, dispersion energy, and dielectric constant were estimated. The room-temperature current-voltage characteristics of the fabricated Au/BDPC/p-Si/Al heterojunction showed diode-like behavior. The ideality factor, the barrier height and series resistance were determined based on thermionic emission theory and Norde's function. At reverse bias, the current was interpreted in terms of the Schottky and pool-Frenkle effects in low and high voltages, respectively. The built-in voltage, carrier concentration and barrier height were obtained using capacitance-voltage characteristics.

On the synthesis, structural, optical and magnetic properties of nano-size Zn-MgO

NASA Astrophysics Data System (ADS)

Varshney, Dinesh; Dwivedi, Sonam

2015-09-01

Chemical co-precipitation method is employed to synthesize ZnO, MgO and Zn0.5Mg0.5O nanoparticles. X-ray diffraction (XRD) pattern infers that the sample of ZnO is in single-phase wurtzite structure (hexagonal phase, P63mc), MgO crystallizes in cubic Fd3m space group and Zn0.5Mg0.5O represents mixed nature of ZnO and MgO lattices. MgO nanocrystals band around 1078 cm-1 is ascribed to the TO-LO surface phonon modes in MgO lattice. In case of Zn0.5Mg0.5O lattice illustrating two bands at 436 and 1087 cm-1. FTIR spectra clearly show the broad band within 450-600 cm-1 is associated with the special vibration of magnesium oxide. FT-IR spectrum of Zn0.5Mg0.5O represents the combined bands of both ZnO-MgO oxides. Further the optical study obtained value of MgO (4.08 eV) is much lower than the corresponding bulk value (7.08 eV). All samples show diamagnetic nature at room temperature.

Optical and magnetic properties of Co-doped CuO flower/plates/particles-like nanostructures.

PubMed

Basith, N Mohamed; Vijaya, J Judith; Kennedy, L John; Bououdina, M; Hussain, Shamima

2014-03-01

In this study, pure and Co-doped CuO nanostructures (0.5, 1.0, 1.5, and 2.0 at wt% of Co) were synthesized by microwave combustion method. The prepared samples were characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HR-SEM), energy dispersive X-ray analysis (EDX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectroscopy and vibrating sample magnetometry (VSM). Powder X-ray diffraction patterns refined by the Rietveld method indicated the formation of single-phase monoclinic structure. The surface morphology and elemental analysis of Co-doped CuO nanostructures were studied by using HR-SEM and EDX. Interestingly, the morphology was found to change considerably from nanoflowers to nanoplates then to nanoparticles with the variation of Co concentration. The optical band gap calculated using DRS was found to be 2.1 eV for pure CuO and increases up to 3.4 eV with increasing cobalt content. Photoluminescence measurements also confirm these results. The magnetic measurements indicated that the obtained nanostructures were ferromagnetic at room temperature with an optimum value of saturation magnetization at 1.0 wt.% of Co-doped CuO, i.e., 970 micro emu/g.

Optical and electron transport properties of rock-salt Sc1-xAlxN

NASA Astrophysics Data System (ADS)

Deng, Ruopeng; Zheng, P. Y.; Gall, D.

2015-07-01

Epitaxial single-crystal Sc1-xAlxN ternary alloy layers deposited by magnetron co-sputtering on MgO(001) substrates at 950 °C exhibit a solid solution rock-salt phase for x = 0-0.2 without decomposition. Optical absorption indicates a linear increase in the optical gap from 2.51 eV for ScN to 3.05 eV for Sc0.8Al0.2N and, after correction due to the Moss-Burstein shift, a direct X point interband transition energy Eg(X) = 2.15 + 2.75 x (eV). Correspondingly, the direct transition at the zone center increases with Al concentration according to Eg(Γ) = 3.80 + 1.45 x (eV), as determined from a feature in the reflection spectra. All layers are degenerate n-type semiconductors with a room temperature mobility that decreases from 22 to 6.7 to 0.83 cm2/V s as x increases from 0 to 0.11 to 0.20. The corresponding carrier densities are 9.2 × 1020, 7.9 × 1020, and 0.95 × 1020 cm-3 as determined from Hall measurements and consistent with optical free carrier absorption below photon energies of 1 eV. Temperature dependent transport measurements indicate metallic conduction for ScN, but weak localization that leads to a resistivity minimum at 85 and 210 K for x = 0.051 and 0.15, respectively, and a negative temperature coefficient over the entire measured 4-300 K range for Sc0.8Al0.2N. The decreasing mobility is attributed to alloy scattering at randomly distributed Al atoms on cation sites, which also cause the weak localization. The carrier density is primarily due to unintentional F doping from the Sc target and decreases strongly for x > 0.15, which is attributed to trapping in defect states due to the deterioration of the crystalline quality, as evidenced by the x-ray diffraction peak width that exhibits a minimum of 0.14° for x = 0.11 but increases to 0.49° for x = 0.20. This is consistent with asymmetric x-ray diffraction analyses, indicating a relaxed lattice constant that decreases from 4.511 ± 0.005 to 4.411 ± 0.004 Å for x = 0-0.2, and a biaxial in-plane compressive strain that decreases from -1.1% to -0.2% as x increases from 0 to 0.11, which is attributed to the higher Al adatom mobility, but increases again to -1.8% for x = 0.20, as x approaches the critical composition for phase separation, which causes structural instability and a higher defect density.

Characterization of WB/SiC Schottky Barrier Diodes Using I-V-T Method

NASA Astrophysics Data System (ADS)

Aldridge, James; Oder, Tom

2009-04-01

The importance of silicon carbide (SiC) semiconductor for high temperature and high power microelectronic device applications has long been established. We have fabricated SiC Schottky barrier diodes using tungsten boride (WB) as the Schottky contact. The diodes were characterized using the current-voltage-temperature method. The sample was mounted on a heated stage and the temperature varied from about 25 ^oC to 300 ^oC at intervals of 25 ^oC. From the Richardson's plot, we obtained an energy barrier height of 0.96 eV and a Richardson's constant of 71.2 AK-1cm-2. Using the modified Richardson's plot, we obtained a barrier height of 1.01 eV. From the variation of the ideality factor and the temperature, we determined a characteristic energy of 0.02 eV to 0.04 eV across the range of the measurement temperature. This implies that thermionic emission is dominant in the low measurement temperature range. Our results confirm the excellent thermal stability of WB/SiC Schottky barrier diodes.

Trap characterization by photo-transferred thermoluminescence in MgO nanoparticles

NASA Astrophysics Data System (ADS)

Isik, M.; Gasanly, N. M.

2018-05-01

Shallow trapping centers in MgO nanoparticles were characterized using photo-transferred thermoluminescence (TL) measurements. Experiments were carried out in low temperature range of 10-280 K with constant heating rate. Shallow traps were filled with charge carriers firstly by irradiating the sample at room temperature using S90/Y90 source and then illuminating at 10 K using blue LED. TL glow curve exhibited one peak around 150 K. Curve fitting analyses showed that this peak is composed of two individual peaks with maximum temperatures of 149.0 and 155.3 K. The activation energies of corresponding trapping centers were revealed as 0.70 and 0.91 eV. The dominant mechanism for TL process was found as second order kinetics which represent that fast retrapping is effective transitions taking place within the band gap. Structural characterization of MgO nanoparticles were investigated using x-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. Analyses of experimental observations indicated that MgO nanoparticles show good crystallinity with particle size in nanometer scale.

The impedance spectroscopy analysis of complex perovskite Sr2YbSbO6

NASA Astrophysics Data System (ADS)

Barua, A.; Maity, S.; Mondal, R.; Kumar, S.

2018-04-01

Herein, we have reported the dielectric properties of single phase monoclinic double perovskite oxide of Sr2YbSbO6 having lattice parameter a=5.79 Å, b=5.79 Å, c=8.19 Å and β = 90.136° with grain size ranging between 0.5 to 2.4 µm. The sample has been synthesized by solid state ceramic method. We have performed the impedence spectroscopic study of the sample in the frequency range of 40 Hz to 5 MHz at various temperatures. The relaxation in the sample is polydispersive in nature and obeys the Cole-Cole model. The values of dielectric permittivity and loss tangent at room temperature are 117.94 and 0.18 respectively. The temperature variation of dc conductivity follows the Arrhenius Law with activation energy 0.2 eV and the conduction mechanism of the sample is governed by p-type polaron hopping. Due to its high dielectric permittivity and low loss tangent the sample can be fruitfully utilized for the fabrication of radio frequency devices.

Studies on structural, electrical, thermal and magnetic properties of YFeO3 ceramic

NASA Astrophysics Data System (ADS)

Suthar, Lokesh; Jha, V. K.; Bhadala, Falguni; Roy, M.; Sahu, S.; Barbar, S. K.

2017-10-01

The polycrystalline ceramic sample of YFeO3 has been synthesized by high-temperature solid-state reaction method using high-purity oxides. The formation of the compound has been confirmed by the room temperature (RT) X-ray diffraction analysis. The refined lattice parameters obtained by Rietveld analysis are: a = 5.5907 Å, b = 7.6082 Å and c = 5.2849 Å with orthorhombic symmetry in space group Pnma. The average grain size obtained from the SEM micrograph is around 2 µm. The three-dimensional surface morphology has been investigated using atomic force microscopy (AFM), and the average roughness measured in the sampling area of 100.07 µm2 is around 142 nm. The frequency- and temperature-dependent dielectric constant has been measured. The material shows high dielectric constant value (750) at RT. The activation energy obtained from dc conductivity using Arrhenius relation σ = σ oexp(-Ea/kT) is 2.12 eV. Thermal analysis shows phase change around 625 K with minimum weight loss (i.e. 1.27% of initial weight) from RT to 1273 K. The magnetization measurement indicates soft magnetic behaviour.

Structural, magnetic, optical, dielectric, electrical and modulus spectroscopic characteristics of ZnFe2O4 spinel ferrite nanoparticles synthesized via honey-mediated sol-gel combustion method

NASA Astrophysics Data System (ADS)

Yadav, Raghvendra Singh; Kuřitka, Ivo; Vilcakova, Jarmila; Urbánek, Pavel; Machovsky, Michal; Masař, Milan; Holek, Martin

2017-11-01

This paper reports a honey-mediated green synthesis of ZnFe2O4 spinel ferrite nanoparticles and the effect of further annealing on structural, magnetic, optical, dielectric and electrical properties. X-ray diffraction study confirmed the well formation of ZnFe2O4 spinel ferrite crystal structure. Raman and Fourier transform infrared spectroscopy confirmed the formation of spinel ferrite crystal structure. The scanning electron microscopy study revealed the formation of spherical morphology at lower annealing temperature with achieved particle size 30-60 nm, whereas, octahedral like morphology at higher annealing temperature with particle size 50-400 nm. Magnetization measurements were carried out using a vibrating sample magnetometer at room temperature. The estimated magnetic parameter such as saturation magnetization (Ms), remanence (Mr) and coercivity (Hc) showed variation in value with nano-crystallite size. The highest saturation magnetization (Ms) was 12.81 emu/g for as-synthesized ZnFe2O4 spinel ferrite nanoparticles, whereas, highest coercivity (Hc) was 25.77 Oe for ZnFe2O4 nanoparticles annealed at high temperature 1000 °C. UV-Visible reflectance spectroscopy showed the band gap variation from 1.90 eV to 2.14 eV with the increase of annealing temperature. The dielectric constant and dielectric loss were decreased with frequency showing the normal behavior of spinel ferrites. The variation in conductivity is explained in terms of the variation in microstructure and variation in the mobility of charge carriers associated with the cation redistribution induced by annealing or grain size. The modulus and impedance spectroscopy study revealed the influence of bulk grain and the grain boundary on the electrical resistance and capacitance of ZnFe2O4 nanoparticles. The results presented in this work are helpful for green synthesis of well-controlled size, morphology and physical properties of ZnFe2O4 nanoparticles.

Toward Large Field-of-View High-Resolution X-ray Imaging Spectrometers: Microwave Multiplexed Readout of 28 TES Microcalorimeters

NASA Astrophysics Data System (ADS)

Yoon, W.; Adams, J. S.; Bandler, S. R.; Becker, D.; Bennett, D. A.; Chervenak, J. A.; Datesman, A. M.; Eckart, M. E.; Finkbeiner, F. M.; Fowler, J. W.; Gard, J. D.; Hilton, G. C.; Kelley, R. L.; Kilbourne, C. A.; Mates, J. A. B.; Miniussi, A. R.; Moseley, S. H.; Noroozian, O.; Porter, F. S.; Reintsema, C. D.; Sadleir, J. E.; Sakai, K.; Smith, S. J.; Stevenson, T. R.; Swetz, D. S.; Ullom, J. N.; Vale, L. R.; Wakeham, N. A.; Wassell, E. J.; Wollack, E. J.

2018-04-01

We performed small-scale demonstrations at GSFC of high-resolution X-ray TES microcalorimeters read out using a microwave SQUID multiplexer. This work is part of our effort to develop detector and readout technologies for future space-based X-ray instruments such as the microcalorimeter spectrometer envisaged for Lynx, a large mission concept under development for the Astro 2020 Decadal Survey. In this paper we describe our experiment, including details of a recently designed, microwave-optimized low-temperature setup that is thermally anchored to the 55 mK stage of our laboratory ADR. Using a ROACH2 FPGA at room temperature, we read out pixels of a GSFC-built detector array via a NIST-built multiplexer chip with Nb coplanar waveguide resonators coupled to rf-SQUIDs. The resonators are spaced 6 MHz apart (at ˜ 5.9 GHz) and have quality factors of ˜ 15,000. In our initial demonstration, we used flux-ramp modulation frequencies of 125 kHz to read out 5 pixels simultaneously and achieved spectral resolutions of 2.8-3.1 eV FWHM at 5.9 keV. Our subsequent work is ongoing: to-date we have achieved a median spectral resolution of 3.4 eV FWHM at 5.9 keV while reading out 28 pixels simultaneously with flux-ramp frequencies of 160 kHz. We present the measured system-level noise and maximum slew rates and briefly describe our future development work.

Low-Bandgap Cs4CuSb2Cl12 Layered Double Perovskite: Synthesis, Reversible Thermal Changes, and Magnetic Interaction.

PubMed

Singhal, Nancy; Chakraborty, Rayan; Ghosh, Prasenjit; Nag, Angshuman

2018-05-29

Double perovskites (DPs) with a generic formula A2M'(I)M(III)X6 (A and M are metal ions, and X = Cl, Br, I) are now being explored as potential alternatives to Pb-halide perovskite for solar cell and other optoelectronic applications. However, these DPs typically suffer from wide (~ 3 eV) and/or indirect band gaps. In 2017, a new structural variety, namely layered DP halide Cs4CuSb2Cl12 (CCSC) with bivalent Cu(II) ion in place of M'(I) was reported exhibiting a band gap ~1 eV. Here, we report a mechanochemical synthesis of CCSC, its thermal- and chemical stability, and magnetic response of Cu(II) d9 electrons controlling optoelectronic properties. A simple grinding of precursor salts at ambient conditions provides stable and scalable product CCSC. CCSC is stable in water-acetone solvent mixture (~30% water) and many other polar solvents unlike Pb-halide perovskites. It decomposes to Cs3Sb2Cl9, Cs2CuCl4 and SbCl3 at 210 oC, but the reaction can be reversed back to produce CCSC at lower temperatures and high humidity. A long range magnetic ordering is observed in CCSC even at room temperature. Role of such magnetic ordering in controlling the dispersion of conduction band, and therefore, controlling the electronic and optoelectronic properties of CCSC has been discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

NASA Astrophysics Data System (ADS)

Idris, M. I.; Weng, M. H.; Chan, H.-K.; Murphy, A. E.; Clark, D. T.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2016-12-01

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance-voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm-3) or near interface traps at the interface of the gate oxide and the semiconductor (1012-1013 cm-2 eV-1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

Statistical analysis of suprathermal electron drivers at 67P/Churyumov-Gerasimenko

NASA Astrophysics Data System (ADS)

Broiles, Thomas W.; Burch, J. L.; Chae, K.; Clark, G.; Cravens, T. E.; Eriksson, A.; Fuselier, S. A.; Frahm, R. A.; Gasc, S.; Goldstein, R.; Henri, P.; Koenders, C.; Livadiotis, G.; Mandt, K. E.; Mokashi, P.; Nemeth, Z.; Odelstad, E.; Rubin, M.; Samara, M.

2016-11-01

We use observations from the Ion and Electron Sensor (IES) on board the Rosetta spacecraft to study the relationship between the cometary suprathermal electrons and the drivers that affect their density and temperature. We fit the IES electron observations with the summation of two kappa distributions, which we characterize as a dense and warm population (˜10 cm-3 and ˜16 eV) and a rarefied and hot population (˜0.01 cm-3 and ˜43 eV). The parameters of our fitting technique determine the populations' density, temperature, and invariant kappa index. We focus our analysis on the warm population to determine its origin by comparing the density and temperature with the neutral density and magnetic field strength. We find that the warm electron population is actually two separate sub-populations: electron distributions with temperatures above 8.6 eV and electron distributions with temperatures below 8.6 eV. The two sub-populations have different relationships between their density and temperature. Moreover, the two sub-populations are affected by different drivers. The hotter sub-population temperature is strongly correlated with neutral density, while the cooler sub-population is unaffected by neutral density and is only weakly correlated with magnetic field strength. We suggest that the population with temperatures above 8.6 eV is being heated by lower hybrid waves driven by counterstreaming solar wind protons and newly formed, cometary ions created in localized, dense neutral streams. To the best of our knowledge, this represents the first observations of cometary electrons heated through wave-particle interactions.

Temperature dependence of excitonic emission in [(CH3)2NH2]3[BiI6] organic-inorganic natural self assembled bimodal quantum dots

NASA Astrophysics Data System (ADS)

Abid, Haitham; Samet, Amira; Mlayah, Adnen; Boughzala, Habib; Abid, Younes

2017-11-01

This paper reports on the optical properties of organic - inorganic natural self assembled bimodal quantum dots (dimetylammonium) hexa-iodobismuthate [(CH3)2NH2]3[BiI6]. The crystal structure consists of isolated BiI6 octahedra, as inorganic ions, surrounded by dimethylamine cations. At room temperature, we investigate the optical properties by: UV/Vis absorption, ellipsometry, diffuse reflectance and photoluminescence. A broad Gaussian-shape luminescence band with a large stokes shift is observed in the red spectral range at 2.15 eV, due to radiative recombination of confined excitons in BiI quantum dots, suggesting that excitons are self trapped. The temperature-dependence of the PL emission is investigated. The observed S-shaped emission behavior is explained by thermal escape occurring at lower temperatures for high-energy dots and carriers being recaptured by dots emitting on the low-energy side of the distribution. A rate equation model, showing agreement with the experimental results, is used to investigate the thermal redistribution of the charge carriers. Exciton binding energies of 149.125 and 295.086 meV were determined from the modified Arrhenius analysis.

Hot electron inelastic scattering and transmission across graphene surfaces

NASA Astrophysics Data System (ADS)

Kong, Byoung Don; Champlain, James G.; Boos, J. Brad

2017-06-01

Inelastic scattering and transmission of externally injected hot carriers across graphene layers are considered as a function of graphene carrier density, temperature, and surrounding dielectric media. A finite temperature dynamic dielectric function for graphene for an arbitrary momentum q and frequency ω is found under the random phase approximation and a generalized scattering lifetime formalism is used to calculate the scattering and transmission rates. Unusual trends in scattering are found, including declining rates as graphene carrier density increases and interband transition excitations, which highlights the difference with out-of-plane as compared to in-plane transport. The results also show strong temperature dependence with a drastic increase in scattering at room temperature. The calculated scattering rate at T = 300 K shows a wide variation from 0.2 to 10 fs-1 depending on graphene carrier density, incident carrier momentum, and surrounding dielectrics. The analysis suggests that a transmission rate greater than 0.9 for a carrier with kinetic energy over 1 eV is achievable by carefully controlling the graphene carrier density in conjunction with the use of high-κ dielectric materials. Potential applications to electronic and electro-optical devices are also discussed.

Universal main magnetic focus ion source for production of highly charged ions

NASA Astrophysics Data System (ADS)

Ovsyannikov, V. P.; Nefiodov, A. V.; Levin, A. A.

2017-10-01

A novel room-temperature compact ion source has been developed for the efficient production of atomic ions by means of an electron beam with energy Ee and current density je controllable within wide ranges (100 eV ≲Ee ≲ 60 keV, 10 A/cm2 ≲je ≲ 20 kA/cm2). In the first experiments, the X-ray emission of Ir64+ ions has been measured. Based on a combination of two different techniques, the device can operate both as conventional Electron Beam Ion Source/Trap and novel Main Magnetic Focus Ion Source. The tunable electron-optical system allows for realizing laminar and turbulent electron flows in a single experimental setup. The device is intended primarily for fundamental and applied research at standard university laboratories.

Spectroscopic ellipsometric studies of the dielectric function of Cd1-x-yMnxFeyTe single crystals

NASA Astrophysics Data System (ADS)

Hwang, Younghun; Kim, Hyekyeong; Um, Youngho; Park, Hyoyeol

2004-06-01

Cd1-x-yMnxFeyTe single crystals grown by the vertical Bridgman method have been studied by measuring the complex dielectric function using spectroscopic ellipsometry in the 1.5 5.5 eV photon energy range at room temperature. The CP energy parameters of the E0, E1, E1 + 1, and E2 structures were determined by fitting the second-derivative spectra (d2/d2) with a theoretical model, i.e., the standard critical point (SCP) line shapes. The E1, E1 + 1, and E2 energies decreased with increasing Fe composition y, which is due to the hybridization effect of the valence and conduction bands in Cd1-xMnxTe with Fe 3d levels.

Structural and optical properties of hydrazine hydrate capped cadmium sulphide nanoparticles

NASA Astrophysics Data System (ADS)

Solanki, Rekha Garg; Rajaram, P.

2018-05-01

Semiconductor nanoparticles have received considerable interest due to their size-dependent optical properties. CdS is an important semiconductor material widely used in low cost photovoltaic devices, light-emitting diodes and biological imaging. The nanoparticles of CdS were prepared by a simple chemical precipitation method in aqueous medium. The reaction was carried out at room temperature. The cadmium sulphide nanoparticles were characterized using X-ray powder diffraction (XRD) and UV-visible spectroscopy. The lattice strain, crystallite size and dislocation density were calculated using the Williamson-Hall (W-H) method. The band gap was obtained from the UV-Visible spectra of CdS nanoparticles. The band gap of CdS nanoparticles is around 2.68 eV and the crystallite size is around 5.8 nm.

Optical constants of wurtzite ZnS thin films determined by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Ong, H. C.; Chang, R. P. H.

2001-11-01

The complex dielectric functions of wurtzite ZnS thin films grown on (0001) Al2O3 have been determined by using spectroscopic ellipsometry over the spectral range of 1.33-4.7 eV. Below the band gap, the refractive index n is found to follow the first-order Sellmeir dispersion relationship n2(λ)=1+2.22λ2/(λ2-0.0382). Strong and well-defined free excitonic features located above the band edge are clearly observed at room temperature. The intrinsic optical parameters of wurtzite ZnS such as band gaps and excitonic binding energies have been determined by fitting the absorption spectrum using a modified Elliott expression together with Lorentizan broadening. Both parameters are found to be larger than their zinc blende counterparts.

The reaction efficiency of thermal energy oxygen atoms with polymeric materials

NASA Technical Reports Server (NTRS)

Koontz, S. L.; Nordine, Paul

1990-01-01

The reaction efficiency of several polymeric materials with thermal-energy (0.04 eV translational energy), ground-state (O3P) oxygen atoms was determined by exposing the materials to a room temperature gas containing a known concentration of atomic oxygen. The reaction efficiency measurements were conducted in two flowing afterglow systems of different configuration. Atomic oxygen concentration measurements, flow, transport and surface dose analysis is presented in this paper. The measured reaction efficiencies of Kapton, Mylar, polyethylene, D4-polyethylene and Tedlar are .001 to .0001 those determined with high-energy ground-state oxygen atoms in low earth orbit or in a high-velocity atom beam. D4-polyethylene exhibits a large kinetic isotope effect with atomic oxygen at thermal but not hyperthermal atom energies.

Infrared spectroscopy of radiation-chemical transformation of n-hexane on a beryllium surface

NASA Astrophysics Data System (ADS)

Gadzhieva, N. N.

2017-07-01

The radiation-chemical decomposition of n-hexane in a Be- n-hexane system under the effect of γ-irradiation at room temperature is studied by infrared reflection-absorption spectroscopy. In the absorbed dose range 5 kGy ≤ Vγ ≤ 50 kGy, intermediate surface products of radiation-heterogeneous decomposition of n-hexane (beryllium alkyls, π-olefin complexes, and beryllium hydrides) are detected. It is shown that complete radiolysis occurs at Vγ = 30 kGy; below this dose, decomposition of n-hexane occurs only partially, while higher doses lead to steady-state saturation. The radiation-chemical yield of the final decomposition product—molecular hydrogen—is determined to be G ads(H2) = 24.8 molecules/100 eV. A possible mechanism of this process is discussed.

Raman study of vibrational dynamics of aminopropylsilanetriol in gas phase

NASA Astrophysics Data System (ADS)

Volovšek, V.; Dananić, V.; Bistričić, L.; Movre Šapić, I.; Furić, K.

2014-01-01

Raman spectrum of aminopropylsilanetriol (APST) in gas phase has been recorded at room temperature in macro chamber utilizing two-mirror technique over the sample tube. Unlike predominantly trans molecular conformation in condensed phase, the spectra of vapor show that the molecules are solely in gauche conformation with intramolecular hydrogen bond N⋯Hsbnd O which reduces the molecular energy in respect to trans conformation by 0.152 eV. The assignment of the molecular spectra based on the DFT calculation is presented. The strong vibrational bands at 354 cm-1, 588 cm-1 and 3022 cm-1 are proposed for verifying the existence of the ring like, hydrogen bonded structure. Special attention was devoted to the high frequency region, where hydrogen bond vibrations are coupled to stretchings of amino and silanol groups.

Charge density wave modulation and gap measurements in CeTe 3

DOE PAGES

Ralevic, U.; Lazarevic, N.; Baum, A.; ...

2016-10-14

Here, we present a study of charge density wave (CDW) ordering in CeTe 3 at room temperature using a scanning tunneling microscope and Raman spectroscopy. Two characteristic CDW ordering wave vectors obtained from the Fourier analysis are assessed to be |c* – q|=4.19nm –1 and |q|=10.26nm –1 where |c*|=2π/c is the reciprocal lattice vector. The scanning tunneling spectroscopy measurements, along with inelastic light (Raman) scattering measurements, show a CDW gap Δ max of approximately 0.37 eV. In addition to the CDW modulation, we observe an organization of the Te sheet atoms in an array of alternating V- and N-shaped groupsmore » along the CDW modulation, as predicted in the literature.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nieroda, Pawel; Zybala, Rafal; Wojciechowski, Krzysztof T.

The aim of the study was to develop a fast and simple method for preparation of polycrystalline Mg{sub 2}Si. For this purpose a Spark Plasma Sintering (SPS) method was used and synthesis conditions were adjusted in such a manner that no excess Mg was required. Materials were synthesized by the direct reaction of Mg and Si raw powders. To determine the phase and chemical composition, the fabricated samples were studied by X-ray diffraction and SEM microscopy coupled with EDX chemical analysis. Thermoelectric properties of samples (thermal conductivity, electrical conductivity and Seebeck coefficient) were measured all over temperature range of 300-650more » K. The analysis by the scanning thermoelectric microprobe (STM) shows that samples have uniform distribution of Seebeck coefficient with mean value of about -405 {mu}VK{sup -1} and standard deviation of 94 {mu}VK{sup -1}. Prepared materials have intrinsic band gap of 0.45 eV and thermal conductivity {lambda}= 7.5 Wm{sup -1}K{sup -1} at room temperature.« less

A simple and low temperature process for super-hydrophilic rutile TiO 2 thin films growth

NASA Astrophysics Data System (ADS)

Mane, R. S.; Joo, Oh-Shim; Min, Sun-Ki; Lokhande, C. D.; Han, Sung-Hwan

2006-11-01

We investigate an environmentally friendly aqueous solution system for rutile TiO2 violet color nanocrystalline thin films growth on ITO substrate at room temperature. Film shows considerable absorption in visible region with excitonic maxima at 434 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), UV-vis, water surface contact angle and energy dispersive X-ray analysis (EDX) techniques in addition to actual photo-image that shows purely rutile phase of TiO2 with violet color, super-hydrophilic and densely packed nanometer-sized spherical grains of approximate diameter 3.15 ± 0.4 nm, characterize the films. Band gap energy of 4.61 eV for direct transition was obtained for the rutile TiO2 films. Film surface shows super-hydrophilic behavior, as exhibited water contact angle was 7°. Strong visible absorption (not due to chlorine) leaves future challenge to use these films in extremely thin absorber (ETA) solar cells.

Ferroelectric and optical properties of `Ba-doped' new double perovskites

NASA Astrophysics Data System (ADS)

Parida, B. N.; Panda, Niranjan; Padhee, R.; Parida, R. K.

2018-06-01

Solid solution of Pb1.5Ba0.5BiNbO6 ceramic is explored here to obtain its ferroelectric and optical properties. The polycrystalline sample was prepared by a standard solid state reaction route. Room temperature XRD and FTIR spectra of the compound exhibit an appreciable change in its crystal structure of Pb2BiNbO6 on addition of 'Ba' in A site. The surface morphology of the gold-plated sintered pellet sample recorded by SEM exhibits a uniform distribution of small grains with well-defined grain boundaries. Detailed studies on the nature of polarization and variation of dielectric constant, tangent loss with temperature as well as frequency indicate the existence of Ferro-electricity in the sample. Using UV-Vis spectroscopy, the optical band gap of the studied sample has been estimated as 2.1 eV, which is useful for photo catalytic devices. Photoluminescence analysis of the powder sample shows a strong red photoluminescence with blue excitation, which is basically useful for LED.

Potassium acceptor doping of ZnO crystals

NASA Astrophysics Data System (ADS)

Parmar, Narendra S.; Corolewski, Caleb D.; McCluskey, Matthew D.; Lynn, K. G.

2015-05-01

ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ˜1 × 1016 cm-3. IR measurements show a local vibrational mode (LVM) at 3226 cm-1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O-H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm-1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

First-principles study of high spin-polarization and thermoelectric efficiency of ferromagnetic CoFeCrAs quaternary Heusler alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-03-01

The ground state properties along with thermodynamic and thermoelectric properties of quaternary CoFeCrAs alloy within the ordered LiMgPdSn-type structure have been investigated by employing first-principles calculations. The alloy offers half-metallic ferromagnet character with an indirect band gap of 1.12 eV in the minority spin state with total spin magnetic moment of 4μB and follows Slater-Pauling relation. Effects on various properties of the material has been studied by the variation of the pressure and temperature. CoFeCrAs tenders large value of the Grüneisen parameter and small value for the thermal expansion coefficient. The materials present high Seebeck coefficient and huge power factor with the room temperature value of ∼-40 μV/K and 18 (1014 μWcm-1 K-2 s-1) respectively, which make CoFeCrAs promising candidate for efficient thermoelectric material.

Nanostructured PdO Thin Film from Langmuir-Blodgett Precursor for Room-Temperature H2 Gas Sensing.

PubMed

Choudhury, Sipra; Betty, C A; Bhattacharyya, Kaustava; Saxena, Vibha; Bhattacharya, Debarati

2016-07-06

Nanoparticulate thin films of PdO were prepared using the Langmuir-Blodgett (LB) technique by thermal decomposition of a multilayer film of octadecylamine (ODA)-chloropalladate complex. The stable complex formation of ODA with chloropalladate ions (present in subphase) at the air-water interface was confirmed by the surface pressure-area isotherm and Brewster angle microscopy. The formation of nanocrystalline PdO thin film after thermal decomposition of as-deposited LB film was confirmed by X-ray diffraction and Raman spectroscopy. Nanocrystalline PdO thin films were further characterized by using UV-vis and X-ray photoelectron spectroscopic (XPS) measurements. The XPS study revealed the presence of prominent Pd(2+) with a small quantity (18%) of reduced PdO (Pd(0)) in nanocrystalline PdO thin film. From the absorption spectroscopic measurement, the band gap energy of PdO was estimated to be 2 eV, which was very close to that obtained from specular reflectance measurements. Surface morphology studies of these films using atomic force microscopy and field-emission scanning electron microscopy indicated formation of nanoparticles of size 20-30 nm. These PdO film when employed as a chemiresistive sensor showed H2 sensitivity in the range of 30-4000 ppm at room temperature. In addition, PdO films showed photosensitivity with increase in current upon shining of visible light.

Enhanced Cleaning and Education to Prevent Transmission of Clostridium difficile in Pediatrics

PubMed Central

Aslam, Anoshé; Melendez, Giselle; Wang, Min; Stell, Frederic; Kelly, Paulette; Killinger, James; Dannaoui, Aimee; Riedman, Scott; Lopez, Ruben; Ackerman, Jill; Chou, Alexander; Wexler, Leonard; Smith, David; Sanchez, Stacy; Robilotti, Elizabeth; Kamboj, Mini; Eagan, Janet

2017-01-01

Abstract Background Transmission of healthcare-associated Clostridium difficile infection (HA-CDI) has been shown to occur directly or indirectly through a contaminated environment. At a tertiary-care cancer center, HA-CDI rates were higher for pediatric units than for other general oncology units. To address the problem, a multidisciplinary team, including Infection Control, Nursing, and Environmental Services (EVS), was convened and identified refusals and room clutter as barriers to proper cleaning of rooms on the unit. Aim: The aim of this study seeks to reduce HA-CDI in the inpatient pediatrics setting through environmental and educational interventions. Methods In the first phase of the study from February to April 2016, a baseline assessment of prevalent environmental disinfection practices was made among Nursing, EVS, Physicians, and Patient Representatives. Based on this feedback, the following were implemented during Phase 2, from June through October 2016: 1) Unit-wide disinfection with bleach twice a day including common and high traffic areas; 2) Initiation of a “preferred time for cleaning” program to engage families; 3) Enhanced visitor and family education on PPE use; 4) Creation of a communication plan in case of refusal to clean rooms; and 5) Dedicated use of diaper scales. Results During the first phase of the study, the following barriers to cleaning were identified: 1) High refusal rate as cleaning was perceived as inconvenient by families due to timing; 2) Common perception among EVS staff that multiple requests for cleaning the room may appear intrusive to the families; 3) Excessive clutter in the room; 4) Lack of education regarding PPE use; and 5) Shared equipment for diapers. To overcome these barriers, several interventions as outlined in methods were implemented. In Phase 2, there were 0 cases of HA-CDI identified in pediatric patients starting in July through October, 2016. Conclusion Control of CDI on pediatric units poses unique challenges. Engagement of key stakeholders is essential to identify and meet these challenges and to devise effective strategies that will ultimately lead to reduced hospital-based transmission of CDI. Disclosures All authors: No reported disclosures.

Synthesis, characterisation and thermoelectric properties of the oxytelluride Bi{sub 2}O{sub 2}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luu, Son D.N.; Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6AD; Vaqueiro, Paz, E-mail: p.vaqueiro@reading.ac.uk

2015-03-15

Bi{sub 2}O{sub 2}Te was synthesised from a stoichiometric mixture of Bi, Bi{sub 2}O{sub 3} and Te by a solid state reaction. Analysis of powder X-ray diffraction data indicates that this material crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type (space group I4/mmm), with lattice parameters a=3.98025(4) and c=12.70391(16) Å. The electrical and thermal transport properties of Bi{sub 2}O{sub 2}Te were investigated as a function of temperature over the temperature range 300≤T (K)≤665. These measurements indicate that Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. The thermal conductivity of Bi{sub 2}O{sub 2}Te is remarkably lowmore » for a crystalline material, with a value of only 0.91 W m{sup −1} K{sup −1} at room temperature. - Graphical abstract: Bi{sub 2}O{sub 2}Te, which crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type, is an n-type semiconductor with a remarkably low thermal conductivity. - Highlights: • Bi{sub 2}O{sub 2}Te crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type. • Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. • The thermal conductivity of Bi{sub 2}O{sub 2}Te approaches values found for amorphous solids. • The thermoelectric figure of merit of undoped Bi{sub 2}O{sub 2}Te reaches 0.13 at 573 K.« less

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

NASA Technical Reports Server (NTRS)

Wang, Ling Jun

1998-01-01

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.

Characterization of Thallium Bromide (TlBr) for Room Temperature Radiation Detectors

NASA Astrophysics Data System (ADS)

Smith, Holland McTyeire

Thallium bromide (TlBr) has emerged as a remarkably well-suited material for room temperature radiation detection. The unique combination of high-Z elements, high density, suitable band gap, and excellent electrical transport properties present in TlBr have brought device performance up to par with CdZnTe (CZT), the current market-leading room temperature radiation detector material. TlBr research is at an earlier stage than that of CZT, giving hope that the material will see even further improvement in electronic properties. Improving a resistive semiconductor material requires knowledge of deep levels present in the material and the effects of these deep levels on transport properties. Very few deep level studies have been conducted on TlBr, and none with the depth required to generate useful growth suggestions. In this dissertation, deep levels in nominally undoped and doped TlBr samples are studied with electrical and optical methods. Photo-Induced Conductivity Transient Spectroscopy (PICTS) is used to discover many deep levels in TlBr electrically. These levels are compared to sub-band gap optical transitions originating from defects observed in emission spectra. The results of this research indicate that the origin of resistivity in TlBr is likely due to deep level defects pinning the Fermi level at least ˜0.7 eV from either the conduction or valence band edge. The effect of dopants and deep levels on transport in TlBr is assessed with microwave photoconductivity decay analysis. It is found that Pb-, Se-, and O-doping decreases carrier lifetime in TlBr, whereas C-doping does not. TlBr exhibits weak ionic conductivity at room temperature, which both negatively affects the leakage current of detectors and leads to device degradation over time. Researchers are actively looking for ways to reduce or eliminate the ionic conductivity, but are faced with an intriguing challenge of materials engineering: is it possible to mitigate the ionic conduction of TlBr without harming the excellent electronic transport properties? Doping TlBr in order to control the ionic conductivity has been proposed and shown to be effective in reducing dark ionic current, but the electronic effects of the dopants has not been previously studied in detail. In this dissertation, the electronic effects of dopants introduced for ionic reasons are evaluated.

Temperature effects on cathodoluminescence of enstatite

NASA Astrophysics Data System (ADS)

Ohgo, S.; Nishido, H.

2017-12-01

Cathodoluminescence (CL) of enstatite has been extensively investigated for planetary science applications. The CL features are affected by many factors of impurities such as transition metal elements, structural defects and sample temperature. However, the temperature effects on enstatite CL have not been clarified so far. In this study, we have quantitatively evaluated temperature effects on enstatite CL. Three samples of luminescent enstatite were employed for CL spectral measurements. Color CL imaging was carried out using a cold-cathode type Luminoscope with a cooled-CCD camera. CL spectroscopy was made by a SEM-CL system, which is comprised of SEM (JEOL: JSM-5410LV) combined with a grating monochromator (OXFORD: Mono CL2). The CL emitted from the sample was collected in the range of 300-800 nm with a photomultiplier tube by a photon counting method at various temperatures from -193-50 degree C. All CL spectra were corrected for total instrumental response. Color CL imaging reveals various CL emissions with red, reddish-purple and bluish-purple in the terrestrial and extraterrestrial enstatite. All of them have two broad emission bands at around 400 nm in a blue region and at around 670 nm in a red region at room and liquid nitrogen temperatures. The spectral peak in a red region is sharpened and enhanced at lower temperature due to reduction of thermal lattice vibration and an increase in luminescent efficiency. CL intensity at around 670 nm of enstatite decreases with an increase in sample temperature up to -110 degree C from -193 degree C, and increases with an increase in sample temperature between -110 and 50 degree C. This behavior is not able to be explained by a temperature quenching theory based on an increase in the probability of non-radiative transition with the rise of temperature. A least-square fitting of the Arrhenius plot by assuming a Mott-Seitz model provides an activation energy of less than 0.01 eV in temperature quenching process from -193 to -110 degree C. According to an analytical method proposed by Barnett and Bailiff (1996), an activation energy of 0.03-0.16 eV can be estimated as a sensitizing effect on the CL from -110 up to 50 degree C. The unusual sensitizing effect has not been reported so far in the pyroxene minerals.

Systematic approach on the fabrication of Co doped ZnO semiconducting nanoparticles by mixture of fuel approach for Antibacterial applications

NASA Astrophysics Data System (ADS)

Rajendar, V.; Dayakar, T.; Shobhan, K.; Srikanth, I.; Venkateswara Rao, K.

2014-11-01

Zinc oxide (ZnO) is a wide band gap semiconductor (3.2 eV) with a high exciton binding energy (60 meV), where it has wide applications in advanced spintronic devices. The theoretical prediction of room temperature ferromagnetism and also antibacterial activity will be possible through the investigation of diluted magnetic semiconductors (DMS), such as transition metal doped ZnO, especially Cobalt doped ZnO. The aim of the work is the synthesis of Cobalt (Co) doped ZnO nanopowders were prepared Zn1-xCoxO (0 ⩽ x ⩾ 0.09) nanopowders from Sol-Gel auto combustion method have been synthesized with precursors such as Zinc and Cobalt nitrates with the assistance Ammonium acetate & Urea as fuel by increasing the cobalt concentration in zinc oxide and their structural, morphological, optical, Thermal, magnetic and antibacterial properties were studied by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission Electron microscope (TEM), UV-visible spectroscopy, thermo gravimetric/differential thermal analysis (TG/DTA) and vibrating sample magneto meter (VSM). From the antibacterial studies, against gram positive Bacillus subtilis bacteria is most abundant bacteria in soil and indoor atmosphere, which affects the stored spintronic devices so that the devices should be made with antibacterial activity of DMS like Co doped ZnO. In this article is found that ZnO:Co nanopowders with higher Co doping level (0.07 and 0.09 wt%) exhibit good antibacterial efficiency. The magnetization curves obtained using vibrating sample magnetometer (VSM) show a sign of strong room temperature ferromagnetic behavior when the Co doping level is 0.05 wt% and a weak room temperature ferromagnetic behavior Co doping level is below 0.07 wt%, and also they found to exhibit antiferromagnetic and paramagnetic properties, when the Co doping levels are 0.07 and 0.09 wt%, respectively, to enhance and increase the special magnetic and antibacterial property for sophisticated devices for the sustainable technologies.

The heat is on: room temperature affects laboratory equipment--an observational study.

PubMed

Butler, Julia M; Johnson, Jane E; Boone, William R

2013-10-01

To evaluate the effect of ambient room temperature on equipment typically used in in vitro fertilization (IVF). We set the control temperature of the room to 20 °C (+/-0.3) and used CIMScan probes to record temperatures of the following equipment: six microscope heating stages, four incubators, five slide warmers and three heating blocks. We then increased the room temperature to 26 °C (+/-0.3) or decreased it to 17 °C (+/-0.3) and monitored the same equipment again. We wanted to determine what role, if any, changing room temperature has on equipment temperature fluctuation. There was a direct relationship between room temperature and equipment temperature stability. When room temperature increased or decreased, equipment temperature reacted in a corresponding manner. Statistical differences between equipment were found when the room temperature changed. What is also noteworthy is that temperature of equipment responded within 5 min to a change in room temperature. Clearly, it is necessary to be aware of the affect of room temperature on equipment when performing assisted reproductive procedures. Room and equipment temperatures should be monitored faithfully and adjusted as frequently as needed, so that consistent culture conditions can be maintained. If more stringent temperature control can be achieved, human assisted reproduction success rates may improve.

Mode Transitions in Hall Effect Thrusters

DTIC Science & Technology

2013-07-01

bM = number of pixels per bin m = spoke order 0m = spoke order m = 0 em = electron mass, 9.1110 -31 kg im = Xe ion mass, 2.18×10 -25...periodogram spectral estimate, Arb Hz -1 eT = electron temperature eT = electron temperature parallel to magnetic field, eV eT  = electron ...Fourier transform of x(t)  = inverse angle from 2D DFT, deg-1  = mean electron energy, eV * = material dependent cross-over energy, eV xy

Localized excitons in fluoroperovskite LiBaF3 crystals

NASA Astrophysics Data System (ADS)

Springis, Maris; Trukhin, Anatoly N.; Tale, Ivar

2003-08-01

Two radiating processes in LiBaF3 crystals, fast valence-core transitions (5.4 - 6.5 eV) and slow, so called self-trapped exciton luminescence (about 4.3 eV), are important for practical application. Here we present a study of 4.3 eV luminescence under X-ray excitation and photoexcitation as well as under photostimulation after X-irradiation of undoped and Ag-doped LiBaF3 crystals at various temperatures. It is shown that 4.3 eV luminescence appears under X-ray excitation at least from 85 K to 400 K in both undoped and doped crystals. In all samples studied the excitation spectra of 4.3 eV luminescence contain both the main exciton like band at the edge of fundamental absorption at about 10 eV and weaker band in 7.8 - 8.6 eV region. Luminescence spectrum in the 3.8 - 4.8 eV region under 7.8 - 8.6 eV excitation differs slightly from that under 10 eV excitation. Several luminescence bands in 3.8 - 4.8 eV region arises in the temperature range 85 - 230 K under photostimulation in absorption band of F-type center at 2.9 eV created previously under X-irradiation. We propose the luminescence of LiBaF3 crystals in the 3.8 - 4.8 eV region may be caused by localized excitons formed not only under excitation near the fundamental absorption but also in result of electron recombination with localized holes thermally destroyed above 230 K.

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

NASA Astrophysics Data System (ADS)

Chung, Chen-Yang; Zhu, Bin; Greene, Raymond G.; Thompson, Michael O.; Ast, Dieter G.

2015-11-01

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 °C deposited c-axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 °C deposited amorphous IGZO layer. The TFT exhibits a saturation field-effect mobility of ˜20 cm2/V s, exceeding the mobility of 50 nm thick single layer reference TFTs fabricated with either material. The deposition temperature of the second layer influences the mobility of the underlying transport layer. When the cap layer is deposited at room temperature (RT), the mobility in the 310 °C deposited CAAC layer is initially low (6.7 cm2/V s), but rises continuously with time over 58 days to 20.5 cm2/V s, i.e., to the same value as when the second layer is deposited at 260 °C. This observation indicates that the two layers equilibrate at RT with a time constant on the order of 5 × 106 s. An analysis based on diffusive transport indicates that the room temperature diffusivity must be of the order of 1 × 10-18 cm2 s-1 with an activation enthalpy EA < 0.2 eV for the mobility limiting species. The findings are consistent with a hypothesis that the amorphous layer deposited on top of the CAAC has a higher solubility for impurities and/or structural defects than the underlying nanocrystalline transport layer, and that the equilibration of the mobility limiting species is rate limited by hydrogen diffusion, whose known diffusivity fits these estimates.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

PubMed Central

2013-01-01

Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes. PMID:23594606

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Gogova, D.; Tarelkin, S. A.; Pearton, S. J.

2018-03-01

The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016-9 × 1018 cm-3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with a much lower concentration than the total Sn density. For heavily Sn doped films (Sn concentration, 9 × 1018 cm-3), the electrical properties in the top portion of the layer were determined by deep centers with a level at Ec-0.21 eV not described previously. In more lightly doped layers, the Ec-0.21 eV centers and deeper traps at Ec-0.8 eV were present, with the latter pinning the Fermi level. Low temperature photocapacitance and capacitance voltage measurements of illuminated samples indicated the presence of high densities (1017-1018 cm-3) of deep acceptors with an optical ionization threshold of 2.3 eV. Optical deep level transient spectroscopy (ODLTS) and photoinduced current transient spectroscopy (PICTS) detected electron traps at Ec-0.8 eV and Ec-1.1 eV. For lightly doped layers, the compensation of film conductivity was mostly provided by the Ec-2.3 eV acceptors. For heavily Sn doped films, deep acceptor centers possibly related to Ga vacancies were significant. The photocapacitance and the photocurrent caused by illumination at low temperatures were persistent, with an optical threshold of 1.9 eV and vanished only at temperatures of ˜400 K. The capture barrier for electrons causing the persistent photocapacitance effect was estimated from ODLTS and PICTS to be 0.25-0.35 eV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Jing; Chongqing University of Science and Technology, Chongqing 401331; Hu, Chenguo, E-mail: hucg@cqu.edu.cn

Graphical abstract: The flower-shaped barium vanadate was obtained for the first time. The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. Research highlights: {yields} In the paper, the flower-shaped barium vanadate were obtained for the first time. The CHM method used here is new and simple for preparation of barium vanadate. {yields} The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. The strong bluish-green emission was observed. {yields} The ferromagnetic behavior of the barium vanadate nanoflowers was found with saturation magnetization of about 83.50 x 10{sup -3} emu/g,more » coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10{sup -3} emu/g. {yields} The mechanisms of PL and magnetic property of barium vanadate nanoflowers have been discussed. -- Abstract: The flower-shaped barium vanadate has been obtained by the composite hydroxide mediated (CHM) method from V{sub 2}O{sub 5} and BaCl{sub 2} at 200 {sup o}C for 13 h. XRD and XPS spectrum of the as-synthesized sample indicate it is hexagonal Ba{sub 3}V{sub 2}O{sub 8} with small amount of Ba{sub 3}VO{sub 4.8} coexistence. Scan electron microscope and transmission electron microscope display that the flower-shaped crystals are composed of nanosheets with thickness of {approx}20 nm. The UV-visible spectrum shows that the barium vanadate sample has two optical gaps (3.85 eV and 3.12 eV). Photoluminescence spectrum of the barium vanadate flowers exhibits a visible light emission centered at 492 and 525 nm which might be attributed to VO{sub 4} tetrahedron with T{sub d} symmetry in Ba{sub 3}V{sub 2}O{sub 8}. The ferromagnetic behavior of the barium vanadate nanoflowers has been found with saturation magnetization of about 83.50 x 10{sup -3} emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10{sup -3} emu/g, which is mainly due to the presence of a non-orthovanadate phase with spin S = 1/2.« less

Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

PubMed

Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

2016-06-27

We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer, the strong light confinement results in light-matter coupling strength of ℏΩ = 13.7 meV. Assuming an exciton density per QW of (15aB)^-2, well below the saturation density, in a 2-D box-trap with a side length of 10 to 500 µm, we predict thermal equilibrium Bose-Einstein condensation well above room temperature.

Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Asghar, M.; Mahmood, K.; Malik, Faisal; Hasan, M. A.

2013-06-01

In this paper, we have discussed the growth of ZnO by molecular beam epitaxy (MBE) and interface properties of Au Schottky contacts on grown sample. After the verification of structure and surface properties by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM), respectively, Au metal contact was fabricated by e-beam evaporation to study contact properties. The high value of ideality factor (2.15) and barrier height (0.61 eV) at room temperature obtained by current-voltage (I-V) characteristics suggested the presence of interface states between metal and semiconductor. To confirm this observation we carried out frequency dependent capacitance-voltage (C-V) and conductance-voltage (G-V) demonstrated that the capacitance of diode decreased with increasing frequency. The reason of this behavior is related with density of interface states, series resistance and image force lowering. The C-2-V plot drawn to calculate the carrier concentration and barrier height with values 1.4×1016 cm-3 and 0.92 eV respectively. Again, high value of barrier height obtained from C-V as compared to the value obtained from I-V measurements revealed the presence of interface states. The density of these interface states (Dit) was calculated by well known Hill-Coleman method. The calculated value of Dit at 1 MHz frequency was 2×1012 eV-1 cm-2. The plot between interface states and frequency was also drawn which demonstrated that density of interface states had inverse proportion with measuring frequency.

Behind Closed Doors.

ERIC Educational Resources Information Center

Sturgeon, Julie

2002-01-01

Explains why campus security officials consider locker rooms and restrooms the bane of their jobs, and offers a formula for protecting property and privacy at the same time: first secure the entire building, then zero in on specifics. Describes various security options for these campus areas. (EV)

Measurement of non-Maxwellian electron velocity distributions in a reflex discharge

NASA Technical Reports Server (NTRS)

Phipps, C. R., Jr.; Bershader, D.

1978-01-01

The results of a ruby laser Thomson scattering study of the space and time-resolved electron velocity distributions in a pulsed Penning discharge in hydrogen are presented. Electron densities were to the order of 10 to the 13th/cu cm and temperatures were roughly 3 eV. This point is just prior to the cessation of the discharge ohmic heating pulse. For magnetic strengths less than 200 G, Maxwellian distributions were found over an energy range six times thermal energy. Temperatures agreed with Langmuir probe data. For fields of 450 G, chaotic plasma potentials were observed to be unstable and the Thomson scattering showed that the electron velocity distributions had central temperatures of 2 eV and wing temperatures of 15-12 eV.

Thermal stability of supported gold nanoparticles

NASA Astrophysics Data System (ADS)

Turba, Timothy Fredrick

Nanoparticle gold is of interest for a wide array of applications including catalysis, gas sensing, and light absorption for color filters and optical switches. Many of these applications are dependent upon the particles having sizes <5nm. In this paper, the thermal stability of nanoparticle gold is evaluated. Unsupported gold nanoparticles can grow (and in some cases double their size) even at room temperature. An important approach to stabilizing gold nanoparticles is through an interaction with a suitable substrate support material. Semiconductor substrates such as GaN are important supports for gold nanoparticles for applications such as sensors, but GaN does not provide a significant stabilizing effect at high temperatures. This paper covers a number of different substrate materials and in particular shows that for some substrates, such as SiO2, gold nanoparticles can be stable at temperatures up to 500°C, which is significantly above the Tammann temperature for bulk gold (395°C). In this dissertation, gold nanoparticles are shown to have complete stability on aluminum-supported silica nanosprings at 550°C in air. This stability window is one of the highest reported for nanoparticle gold and potentially enables a number of applications for this highly active catalyst. X-ray photoelectron spectroscopy measurements were performed before and after heating to 550°C to determine the nature of the interaction between gold and SiO2. A 1.2 eV drop in gold 4f binding energy after heating signified a shift to anionic gold particles (i.e., Au delta-) indicative of strong bonds to oxygen vacancies with neighboring Sidelta+ atoms. Heating in hydrogen at 550°C resulted in a binding energy decrease of 0.4 eV due to an increased fraction of particles with decreased coordination numbers (i.e., more atoms at edges and corners). Lastly, heating gold nanoparticles in an atmosphere of 10% relative humidity at 550°C resulted in apparent encapsulation of the gold.

Electron temperature diagnostics of aluminium plasma in a z-pinch experiment at the “QiangGuang-1" facility

NASA Astrophysics Data System (ADS)

Li, Mo; Wu, Jian; Wang, Liang-Ping; Wu, Gang; Han, Juan-Juan; Guo, Ning; Qiu, Meng-Tong

2012-12-01

Two curved crystal spectrometers are set up on the “QiangGuang-1" generator to measure the z-pinch plasma spectra emitted from planar aluminum wire array loads. Kodak Biomax-MS film and an IRD AXUVHS5# array are employed to record time-integrated and time-resolved free-bound radiation, respectively. The photon energy recorded by each detector is ascertained by using the L-shell lines of molybdenum plasma. Based on the exponential relation between the continuum power and photon energies, the aluminum plasma electron temperatures are measured. For the time-integrated diagnosis, several “bright spots" indicate electron temperatures between (450 eV ~ 520 eV) ± 35%. And for the time-resolved ones, the result shows that the electron temperature reaches about 800 eV ± 30% at peak power. The system satisfies the demand of z-pinch plasma electron temperature diagnosis on a ~ 1 MA facility.

Graphene for thermoelectronic solar energy conversion

NASA Astrophysics Data System (ADS)

De, Dilip K.; Olukunle, Olawole C.

2017-08-01

Graphene is a high temperature material which can stand temperature as high as 4600 K in vacuum. Even though its work function is high (4.6 eV) the thermionic emission current density at such temperature is very high. Graphene is a wonderful material whose work function can be engineered as desired. Kwon et al41 reported a chemical approach to reduce work function of graphene using K2CO3, Li2CO3, Rb2CO3, Cs2CO3. The work functions are reported to be 3.7 eV, 3.8 eV, 3.5 eV and 3.4 eV. Even though they did not report the high temperature tolerance of such alkali metal carbonate doped graphene, their works open a great promise for use of pure graphene and doped graphene as emitter (cathode) and collector (anode) in a solar thermionic energy converter. This paper discusses the dynamics of solar energy conversion to electrical energy using thermionic energy converter with graphene as emitter and collector. We have considered parabolic mirror concentrator to focus solar energy onto the emitter to achieve temperature around 4300 K. Our theoretical calculations and the modelling show that efficiency as high as 55% can easily be achieved if space-charge problem can be reduced and the collector can be cooled to certain proper temperature. We have discussed methods of controlling the associated space-charge problems. Richardson-Dushman equation modified by the authors have been used in this modelling. Such solar energy conversion would reduce the dependence on silicon solar panel and has great potential for future applications.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

PubMed

Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

Possible origin of photoconductivity in La0.7Ca0.3MnO3

NASA Astrophysics Data System (ADS)

Sagdeo, P. R.; Choudhary, R. J.; Phase, D. M.

2010-01-01

The effect of photon energy on the density of states near Fermi level of pulsed laser deposited La0.7Ca0.3MnO3 thin film has been studied to investigate the possible origin of change in the conductivity of these manganites upon photon exposure. For this purpose the photoelectron spectroscopy measurements were carried out using CSR beamline (BL-2) on Indus-1 synchrotron radiation source. The valance band spectra were measured at room temperature with photon energy ranging from 40 to 60 eV. We could see huge change in the density of states near Fermi level and this change is observed to be highest at 56 eV which is due to the resonance between Mn 3p to Mn 3d level. Our results suggest that the probability of electron transfer from deep Mn 3p level to Mn 3d-eg level is higher than that of Mn 3d-t2g level. It appears that this transfer of electron from deep Mn level to Mn 3d-eg level not only modifies the density of state near Fermi level but also changes the mobility of electrons by modifying the electron lattice coupling due to presence of Mn+3 Jahn-Teller ion.

Calculated electronic, transport, and related properties of zinc blende boron arsenide (zb-BAs)

NASA Astrophysics Data System (ADS)

Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Franklin, Lashounda; Bagayoko, Diola

2016-10-01

We present the results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide. We utilized the local density approximation potential of Ceperley and Alder, as parameterized by Vosko and his group, the linear combination of Gaussian orbitals formalism, and the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF), in carrying out our completely self-consistent calculations. With this method, the results of our calculations have the full, physical content of density functional theory (DFT). Our results include electronic energy bands, densities of states, effective masses, and the bulk modulus. Our calculated, indirect band gap of 1.48 eV, from Γ to a conduction band minimum close to X, for the room temperature lattice constant of 4.777 Å, is in an excellent agreement with the experimental value of 1.46 ± 0.02 eV. We thoroughly explain the reasons for the excellent agreement between our findings and corresponding, experimental ones. This work provides a confirmation of the capability of DFT to describe accurately properties of materials, if the computations adhere strictly to the conditions of validity of DFT, as done by the BZW-EF method.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

Analysis of aging time dependent electrical characteristics of AuCu/n-Si/Ti Schottky type diode

NASA Astrophysics Data System (ADS)

Taser, Ahmet; Şenarslan, Elvan; Güzeldir, Betül; Saǧlam, Mustafa

2017-04-01

The purpose of this study is to fabricate AuCu/n-Si/Ti Schottky type diode and determine the effects of aging time on the diode parameters such as ideality factor, barrier height, series resistance, interface state density and rectification ratio. Gold and copper ratios in the gold-copper alloy used in making the Schottky contact were taken as equal. Schottky barrier contact using AuCu alloy and ohmic contact using Ti metal were made on n-Si by thermal evaporation. The electrical characterization of the AuCu/n-Si/Ti diode was made immediately based on the aging time at room temperature in dark conditions. The I-V measurements were also repeated 1, 7, 15, 30 and 90 days after fabrication of the diode in order to observe the effect of the aging time. The determined values of the ideality factor are in the range of 1,21 (for immediately)-1,075 (for 90 days). In the same way, values of the barrier height are also in the range of 0,566 eV (for immediately)-0,584 eV (for 90 days). From the I-V characteristics, it is seen that the diode appears to have a good rectification character.

Influence of samarium ions (Sm3+) on the optical properties of lithium zinc phosphate glasses

NASA Astrophysics Data System (ADS)

Shwetha, M.; Eraiah, B.

2018-05-01

New glass samples with composition xSm2O3-(15-x) Li2O-45ZnO-40P2O5, where x= 0, 0.1, 0.3 and 0.5 mol % are prepared by conventional melt-quenching method. X-ray Diffraction measurements were performed to confirm their amorphous nature. Densities of these glasses were measured by Archimedes method. Optical properties were studied using optical absorption spectra which was recorded at room temperature in the UV-Vis region. Electronic transitions specific to the rare earth ion were observed from the UV-Visible spectroscopy. Optical direct band gap and indirect band gap energies were measured and their values were found to be between 4.23-4.74 eV and 3.02-3.67 eV, respectively. Refractive index has been measured with respect to different concentrations of Sm2O3. Polaron radius, inter-nuclear distance, field strength, dielectric constant and polarizability of oxide ions have been calculated. Fluorescence spectroscopy measurements have been performed by excitation in the UV-Visible range, which resulted in the significant fluorescence peaks. The luminescence color of the glass system has been characterized using Commission International de l'Eclairage de France 1931 chromaticity diagram.

Optical constants of SrF 2 thin films in the 25-780-eV spectral range

DOE PAGES

Rodriguez-de Marcos, Luis; Larraguert, Juan I.; Aznarez, Jose A.; ...

2013-04-08

The transmittance and the optical constants of SrF 2 thin films, a candidate material for multilayer coatings operating in the extreme ultraviolet and soft x-rays, have been determined in the spectral range of 25–780 eV, in most of which no experimental data were previously available. SrF 2 films of various thicknesses were deposited by evaporation onto room-temperature, thin Al support films, and their transmittance was measured with synchrotron radiation. The transmittance as a function of film thickness was used to calculate the extinction coefficient k at each photon energy. A decrease in density with increasing SrF 2 film thickness wasmore » observed. In the calculation of k, this effect was circumvented by fitting the transmittance versus the product of thickness and density. The real part of the refractive index of SrF 2 films was calculated from k with Kramers-Krönig analysis, for which the measured spectral range was extended both to lower and to higher photon energies with data in the literature combined with interpolations and extrapolations. In conclusion, with the application of f- and inertial sum rules, the consistency of the compiled data was found to be excellent.« less

Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array.

PubMed

Nie, Kui-Ying; Tu, Xuecou; Li, Jing; Chen, Xuanhu; Ren, Fang-Fang; Zhang, Guo-Gang; Kang, Lin; Gu, Shulin; Zhang, Rong; Wu, Peiheng; Zheng, Youdou; Tan, Hark Hoe; Jagadish, Chennupati; Ye, Jiandong

2018-06-14

The ability to manipulate light-matter interaction in semiconducting nanostructures is fascinating for implementing functionalities in advanced optoelectronic devices. Here, we report the tailoring of radiative emissions in a ZnTe/ZnTe:O/ZnO core-shell single nanowire coupled with a one-dimensional aluminum bowtie antenna array. The plasmonic antenna enables changes in the excitation and emission processes, leading to an obvious enhancement of near band edge emission (2.2 eV) and subgap excitonic emission (1.7 eV) bound to intermediate band states in a ZnTe/ZnTe:O/ZnO core-shell nanowire as well as surface-enhanced Raman scattering at room temperature. The increase of emission decay rate in the nanowire/antenna system, probed by time-resolved photoluminescence spectroscopy, yields an observable enhancement of quantum efficiency induced by local surface plasmon resonance. Electromagnetic simulations agree well with the experimental observations, revealing a combined effect of enhanced electric near-field intensity and the improvement of quantum efficiency in the ZnTe/ZnTe:O/ZnO nanowire/antenna system. The capability of tailoring light-matter interaction in low-efficient emitters may provide an alternative platform for designing advanced optoelectronic and sensing devices with precisely controlled response.

Ab-initio Calculation of Optoelectronic and Structural Properties of Cubic Lithium Oxide (Li2O)

NASA Astrophysics Data System (ADS)

Ziegler, Joshua; Polin, Daniel; Malozovsky, Yuriy; Bagayoko, Diola

Using the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF), we performed ab-initio, density functional theory (DFT) calculations of optoelectronic, transport, and bulk properties of Li2S. In so doing, we avoid ``band gap'' and problems plaguing many DET calculations [AIP Advances 4, 127104 (2014)]. We employed a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). With the BZW-EF method, our results possess the full, physical content of DFT and agree with available, corresponding experimental ones. In particular, we found a room temperature indirect band gap of 6.659 eV that compares favorably with experimental values ranging from 5 to 7.99 eV. We also calculated total and partial density of states (DOS and PDOS), effective masses of charge carriers, the equilibrium lattice constant, and the bulk modulus. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award Nos. DE-NA0001861 and DE- NA0002630), LaSPACE, and LONI-SUBR.

Effects of copper on the preparation and characterization of Na-Ca-P borate glasses.

PubMed

Shailajha, S; Geetha, K; Vasantharani, P; Sheik Abdul Kadhar, S P

2015-03-05

Glasses in the system Na2O-CaO-B2O3-P2O5: CuO have been prepared by melt quenching at 1200°C and rapidly cooling at room temperature. The structural, optical and thermal properties have been investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-VIS) spectroscopy, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform infrared (FTIR) spectroscopy, high resolution scanning electron microscopy (HRSEM) with energy dispersive X-ray (EDX) spectroscopy and high resolution transmission electron microscope (HRTEM) with energy dispersive X-ray (EDAX). The amorphous and crystalline nature of these samples was verified by XRD. Glass transition, crystallization and thermal stability were determined by TG-DTA investigations. Direct optical energy band gaps before and after doping with different percents of copper oxide were evaluated from 4.81eV to 2.99eV indicated the role of copper in the glassy matrix by UV spectra. FTIR spectrum reveals characteristic absorption bands due to various groups of triangular and tetrahedral borate network. Due to the amorphous nature, the particles like agglomerates on the glass surface were investigated by the HRSEM analysis. The crystalline nature of the samples in XRD is confirmed by SAED pattern using HRTEM. Copyright © 2014 Elsevier B.V. All rights reserved.

Lithium Transport in an Amorphous Li xSi Anode Investigated by Quasi-elastic Neutron Scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sacci, Robert L.; Lehmann, Michelle L.; Diallo, Souleymane O.

Here, we demonstrate the room temperature mechanochemical synthesis of highly defective Li xSi anode materials and characterization of the Li transport. We probed the Li + self-diffusion using quasi-elastic neutron scattering (QENS) to measure the Li self-diffusion in the alloy. Li diffusion was found to be significantly greater (3.0 × 10 –6 cm 2 s –1) than previously measured crystalline and electrochemically made Li–Si alloys; the energy of activation was determined to be 0.20 eV (19 kJ mol –1). Amorphous Li–Si structures are known to have superior Li diffusion to their crystalline counterparts; therefore, the isolation and stabilization of defectivemore » Li–Si structures may improve the utility of Si anodes for Li-ion batteries.« less

Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

NASA Astrophysics Data System (ADS)

He, J. L.; Li, W. Z.; Wang, L. D.; Wang, J.; Li, H. D.

1998-02-01

Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (˜1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed.

Charge transport mechanism analysis of Al/CdS:Sr{sup 2+}/ITO device under dark and light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datta, Joydeep; Das, Mrinmay; Dey, Arka

2016-05-06

In this study, we have synthesized CdS:Sr{sup 2+} by hydrothermal technique. Material property has been studied by X-ray diffraction (XRD), Scanning electron microscope (SEM) and UV-vis absorption spectroscopy. XRD data revealed that there are mixed phases of CdS and SrS in the synthesized sample. The optical band gap of the material was estimated as 3.15 eV from UV-vis data. The synthesized material has been applied in metal-semiconductor device and transport properties have been analyzed by measuring current–voltage characteristics under dark and light conditions at room temperature. Variation in different device parameters like ideality factor, barrier height and series resistance ofmore » Al/CdS:Sr{sup 2+}/ITO device were analyzed by using Cheung’s function.« less

Ionic conductivity of sodium silicate glasses grown within confined volume of mesoporous silica template

NASA Astrophysics Data System (ADS)

Chatterjee, Soumi; Saha, Shyamal Kumar; Chakravorty, Dipankar

2018-04-01

Nanodimensional sodium silicate glasses of composition 30Na2O.70SiO2 has been prepared within the pores of 5.5 nm of mesoporous silica as a template using the surfactant P123. The nanocomposite was characterized by X-ray diffraction, transmission electron microscope, and X-ray photoelectron spectroscopy. Electrical conductivity of the sample was studied by ac impedance spectroscopy. The activation energy for ionic conduction was found to be 0.13 eV with dc conductivity at room temperature of 10-6 S-cm-1. This is attributed to the creation of oxygen ion vacancies at the interface of mesoporous silica and nanoglass arising out of the presence of Si2+ species in the system. These nanocomposites are expected to be useful for applications in sodiumion battery for storage of renewable energy.

Lithium Transport in an Amorphous Li xSi Anode Investigated by Quasi-elastic Neutron Scattering

DOE PAGES

Sacci, Robert L.; Lehmann, Michelle L.; Diallo, Souleymane O.; ...

2017-04-27

Here, we demonstrate the room temperature mechanochemical synthesis of highly defective Li xSi anode materials and characterization of the Li transport. We probed the Li + self-diffusion using quasi-elastic neutron scattering (QENS) to measure the Li self-diffusion in the alloy. Li diffusion was found to be significantly greater (3.0 × 10 –6 cm 2 s –1) than previously measured crystalline and electrochemically made Li–Si alloys; the energy of activation was determined to be 0.20 eV (19 kJ mol –1). Amorphous Li–Si structures are known to have superior Li diffusion to their crystalline counterparts; therefore, the isolation and stabilization of defectivemore » Li–Si structures may improve the utility of Si anodes for Li-ion batteries.« less

Microstructural, optical and electrical properties of LaFe0.5Cr0.5O3 perovskite nanostructures

NASA Astrophysics Data System (ADS)

Ali, S. Asad; Naseem, Swaleha; Khan, Wasi; Sharma, A.; Naqvi, A. H.

2016-05-01

Perovskite nanocrystalline powder of LaFe0.5Cr0.5O3 was synthesized by sol-gel combustion route and characterized by x-ray diffractometer (XRD), scanning electron microscopy (SEM) equipped with EDS, UV-visible and LCR meter at room temperature Rietveld refinement of the XRD data confirms that the sample is in single phase-rhombohedral structure with space group R-3C. SEM micrograph shows clear nanostructure of the sample and EDS ensures the presence of all elements in good stoichiometric. The optical absorption indicates the maximum absorption at 315 nm and optical band gap of 2.94 eV was estimated using Tauc's relation. Dielectric constant (ɛ') and loss were found to decrease with increase in frequencies. The dielectric behavior was explained on the basis of Maxwell-Wagner's two layer model.

Preparation of NASICON-Type Nanosized Solid Electrolyte Li1.4Al0.4Ti1.6(PO4)3 by Evaporation-Induced Self-Assembly for Lithium-Ion Battery

NASA Astrophysics Data System (ADS)

Liu, Xingang; Fu, Ju; Zhang, Chuhong

2016-12-01

A simple and practicable evaporation-induced self-assembly (EISA) method is introduced for the first time to prepare nanosized solid electrolyte Li1.4Al0.4Ti1.6(PO4)3 (LATP) for all-solid-state lithium-ion batteries. A pure Na+ super ion conductor (NASICON) phase is confirmed by X-ray diffraction (XRD) analysis, and its primary particle size is down to 70 nm by optimizing evaporation rate of the solvent. Excellent room temperature bulk and total lithium-ion conductivities of 2.09 × 10-3 S cm-1 and 3.63 × 10-4 S cm-1 are obtained, with an ion-hopping activation energy as low as 0.286 eV.

Stabilizing Single Ni Adatoms on a Two-Dimensional Porous Titania Overlayer at the SrTiO3(110) Surface

PubMed Central

2014-01-01

Nickel vapor-deposited on the SrTiO3(110) surface was studied using scanning tunneling microscopy, photoemission spectroscopy (PES), and density functional theory calculations. This surface forms a (4 × 1) reconstruction, composed of a 2-D titania structure with periodic six- and ten-membered nanopores. Anchored at these nanopores, Ni single adatoms are stabilized at room temperature. PES measurements show that the Ni adatoms create an in-gap state located at 1.9 eV below the conduction band minimum and induce an upward band bending. Both experimental and theoretical results suggest that Ni adatoms are positively charged. Our study produces well-dispersed single-adatom arrays on a well-characterized oxide support, providing a model system to investigate single-adatom catalytic and magnetic properties. PMID:25177410

Transport, Structural and Mechanical Properties of Quaternary FeVTiAl Alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2016-11-01

The electronic, structural, magnetic and transport properties of FeVTiAl quaternary alloy have been investigated within the framework of density functional theory. The material is a completely spin-polarized half-metallic ferromagnet in its ground state with F-43m structure. The structural stability was further confirmed by elastic constants in the cubic phase with high Young's modulus and brittle nature. The present study predicts an energy band gap of 0.72 eV in a localized minority spin channel at equilibrium lattice parameter of 6.00 Å. The transport properties of the material are discussed based on the Seebeck coefficient, and electrical and thermal conductivity coefficients. The alloy presents large values of Seebeck coefficients, ~39 μV K-1 at room temperature (300 K), and has an excellent thermoelectric performance with ZT = ~0.8.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Steady state and time resolved optical characterization studies of Zn 2SnO 4 nanowires for solar cell applications

DOE PAGES

Yakami, Baichhabi R.; Poudyal, Uma; Nandyala, Shashank R.; ...

2016-10-25

Nanowires are a promising option for sensitized solar cells, sensors, and display technology. Most of the work thus far has focused on binary oxides for these nanowires, but ternary oxides have advantages in additional control of optical and electronic properties. Here, we report on the diffuse reflectance, Low Temperature and Room Temperature Photoluminescence (PL), PL excitation spectrum, and Time Resolved PL (TRPL) of Zinc Tin Oxide (ZTO) nanowires grown by Chemical Vapor Deposition. The PL from the ZTO nanowires does not exhibit any band gap or near gap emission, and the diffuse reflectance measurement confirms that these ZTO nanowires havemore » a direct forbidden transition. The broad PL spectrum reveals two Gaussian peaks centered at 1.86 eV (red) and 2.81 eV (blue), representing two distinct defect states or complexes. The PL spectra were further studied by the Time Resolved Emission Spectrum and intensity dependent PL and TRPL. The time resolved measurements show complex non-exponential decays at all wavelengths, indicative of defect to defect transitions, and the red emissive states decay much slower than the blue emissive states. The effects of annealing in air and vacuum are studied to investigate the origin of the defect states in the nanowires, showing that the blue states are related to oxygen vacancies. We propose an energy band model for the nanowires containing defect states within the band gap and the associated transitions between these states that are consistent with our measurements.« less

Steady state and time resolved optical characterization studies of Zn 2SnO 4 nanowires for solar cell applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakami, Baichhabi R.; Poudyal, Uma; Nandyala, Shashank R.

Nanowires are a promising option for sensitized solar cells, sensors, and display technology. Most of the work thus far has focused on binary oxides for these nanowires, but ternary oxides have advantages in additional control of optical and electronic properties. Here, we report on the diffuse reflectance, Low Temperature and Room Temperature Photoluminescence (PL), PL excitation spectrum, and Time Resolved PL (TRPL) of Zinc Tin Oxide (ZTO) nanowires grown by Chemical Vapor Deposition. The PL from the ZTO nanowires does not exhibit any band gap or near gap emission, and the diffuse reflectance measurement confirms that these ZTO nanowires havemore » a direct forbidden transition. The broad PL spectrum reveals two Gaussian peaks centered at 1.86 eV (red) and 2.81 eV (blue), representing two distinct defect states or complexes. The PL spectra were further studied by the Time Resolved Emission Spectrum and intensity dependent PL and TRPL. The time resolved measurements show complex non-exponential decays at all wavelengths, indicative of defect to defect transitions, and the red emissive states decay much slower than the blue emissive states. The effects of annealing in air and vacuum are studied to investigate the origin of the defect states in the nanowires, showing that the blue states are related to oxygen vacancies. We propose an energy band model for the nanowires containing defect states within the band gap and the associated transitions between these states that are consistent with our measurements.« less

Observation of CH A 2X 2Πr and 2Σ--->X 2Πr emissions in gas-phase collisions of fast O(3P) atoms with acetylene

NASA Astrophysics Data System (ADS)

Orient, O. J.; Chutjian, A.; Murad, E.

1995-03-01

Optical emissions in single-collision, beam-beam reactions of fast (3-22-eV translational energy) O(3P) atoms with C2H2 have been measured in the wavelength range 300-850 nm. Two features were observed, one with a peak wavelength at 431 nm, corresponding to the CH A 2X 2Πr transition, and a second weaker emission in the range 380-400 nm corresponding to the B 2Σ--->X 2Πr transition. Both the A-->X and B-->X emissions were fit to a synthetic spectrum of CH(A) at a vibrational temperature Tv of 10 000 K (0.86 eV) and a rotational temperature Tr of approximately 5000 K (0.43 eV); and CH(B) to Tv=2500 K (0.22 eV) and Tr=1000 K (0.09 eV). The energy threshold for the A-->X emission was measured to be 7.3+/-0.4 eV (lab) or 4.5+/-0.2 eV (c.m.). This agrees with the energy threshold of 7.36 eV (lab) for the reaction O(3P)+C2H2-->CH(A)+HCO.

[Correlation between thermostability of the xylanase EvXyn11(TS) and its N-terminal disulfide bridge].

PubMed

Min, Rou; Li, Jianfang; Gao, Shujuan; Zhang, Huimin; Wu, Jing; Wu, Minchen

2013-04-04

To reveal the correlation between thermostability of xylanase EvXyn11(TS) and its N-terminal disulfide bridge, an EvXyn11(TS)-encoding gene (Syxyn11) was synthesized and subjected to site-directed mutagenesis. Multiple homology alignment of protein primary structures between the EvXyn11(TS) and several GH family 11 xylanases displayed that, in their N-termini, only EvXyn11(TS) contained a disulfide bridge (Cys5-Cys32), whose effect on the xylanase thermostability was predicted by molecular dynamics simulation. We constructed a gene Syxyn11(M), encoding the mutated xylanase (EvXyn11(M)) without N-terminal disulfide bridge. Then, Syxyn11 and Syxyn11(M) were expressed in Pichia pastoris GS115, and temperature and pH properties of the expressed enzymes were analyzed. The analytical results displayed that the temperature optimum of EvXyn11(M) was 70 degrees C, which was 15 degrees C lower than that of EvXyn11(TS). The half-life (t1/2(90)) of EvXyn11(TS) at 90 degrees C was 32 min, while the t1/2(70) of EvXyn11(M) at 70 degrees C was only 8.0 min. The important role of the N-terminal disulfide bridge on the thermostability of EvXyn11(TS) was first predicted by molecular dynamics simulation, and confirmed by site-directed mutagenesis. This work provided a novel strategy to improve thermostabilities of the mesophilic family 11 xylanases with high specific activities.

Electrical conductivity of Gd doped BiFeO3-PbZrO3 composite

NASA Astrophysics Data System (ADS)

Satpathy, Santosh Kumar; Mohanty, Nilaya Kumar; Behera, Ajay Kumar; Behera, Banarji; Nayak, Pratibindhya

2013-09-01

The composite, 0.5(BiGd0.15Fe0.85O3)-0.5(PbZrO3), was synthesized using the solid-state reaction technique. The formation of the compound was confirmed by XRD with an orthorhombic structure at room temperature. The impedance parameters were studied using an impedance analyzer in a wide range of frequency (102-106 Hz) at different temperatures. The Nyquist plot suggests the contribution of bulk effect and a slight indication of grain boundary effect and the bulk resistance decreases with a rise in temperature. The presence of temperature-dependent relaxation process occurs in the material. Electrical modulus reveals the presence of the hopping mechanism in the materials. The value of exponent n, pre-factor A and σ dc were obtained by fitting ac conductivity data with Jonscher's universal power law. The activation energies calculated from the ac conductivity were found to be 0.50, 0.46, 0.44, 0.43, 0.42 and 0.38 eV at 1, 10, 50, 100, 500 kHz and 1 MHz respectively in the temperature region of 110°C-350°C. The dc conductivity was found to increase with the rise in temperature. The activation energy calculated from complex impedance plot and from the fitted Jonscher's power law are very close, which results similar type of charge carrier exist in conduction mechanism of the material.

Hybrid graphene/geopolymeric cement as a superionic conductor for structural health monitoring applications

NASA Astrophysics Data System (ADS)

Saafi, M.; Piukovics, G.; Ye, J.

2016-10-01

In this paper, we demonstrate for the first time a novel hybrid superionic long gauge sensor for structural health monitoring applications. The sensor consists of two graphene electrodes and a superionic conductor film made entirely of fly ash geopolymeric material. The sensor employs ion hopping as a conduction mechanism for high precision temperature and tensile strain sensing in structures. The design, fabrication and characterization of the sensor are presented. The temperature and strain sensing mechanisms of the sensor are also discussed. The experimental results revealed that the crystal structure of the superionic film is a 3D sodium-poly(sialate-siloxo) framework, with a room temperature ionic conductivity between 1.54 × 10-2 and 1.72 × 10-2 S m-1 and, activation energy of 0.156 eV, which supports the notion that ion hopping is the main conduction mechanism for the sensor. The sensor showed high sensitivity to both temperature and tensile strain. The sensor exhibited temperature sensitivity as high as 21.5 kΩ °C-1 and tensile strain sensitivity (i.e., gauge factor) as high as 358. The proposed sensor is relatively inexpensive and can easily be manufactured with long gauges to measure temperature and bulk strains in structures. With further development and characterization, the sensor can be retrofitted onto existing structures such as bridges, buildings, pipelines and wind turbines to monitor their structural integrity.

[Studies on the health standard for room temperature in cold regions].

PubMed

Meng, Z L

1990-03-01

The microclimate of 205 rooms of single storey houses in four new rural residential districts in coastal and inland Shandong was monitored and studied the blood circulation of the finger, skin temperature, sweating function and other physiological indexes among 2,401 peasants. We interrogated their personal sensation to cold and warmth. The count was done by the application of thermal equilibrium index (TEI), predicted 4-hour Sweat Rate (P4SR) and the uncomfortable index. The standard room temperature is recommended as follows. In rural area in winter the appropriate room temperature is 14-16 degrees C, the comfortable room temperature is 16-20 degrees C, the lowest room temperature must not be below 14 degrees C. In summer the appropriate room temperature is 25-28 degrees C, the comfortable room temperature is 26-27 degrees C, the highest temperature must not be above 28 degrees C.

An improved theoretical electrochemical-thermal modelling of lithium-ion battery packs in electric vehicles

NASA Astrophysics Data System (ADS)

Amiribavandpour, Parisa; Shen, Weixiang; Mu, Daobin; Kapoor, Ajay

2015-06-01

A theoretical electrochemical thermal model combined with a thermal resistive network is proposed to investigate thermal behaviours of a battery pack. The combined model is used to study heat generation and heat dissipation as well as their influences on the temperatures of the battery pack with and without a fan under constant current discharge and variable current discharge based on electric vehicle (EV) driving cycles. The comparison results indicate that the proposed model improves the accuracy in the temperature predication of the battery pack by 2.6 times. Furthermore, a large battery pack with four of the investigated battery packs in series is simulated in the presence of different ambient temperatures. The simulation results show that the temperature of the large battery pack at the end of EV driving cycles can reach to 50 °C or 60 °C in high ambient temperatures. Therefore, thermal management system in EVs is required to maintain the battery pack within the safe temperature range.

Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, W. F.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research; Liu, Z. G.

2013-03-18

Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated withmore » conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.« less

Structural and optical characterization of ZnO nanowires grown on alumina by thermal evaporation method.

PubMed

Mute, A; Peres, M; Peiris, T C; Lourenço, A C; Jensen, Lars R; Monteiro, T

2010-04-01

Zinc oxide nanowires have been grown on alumina substrate by thermal evaporation of zinc nanopowder in the presence of oxygen flow. The growth was performed under ambient pressure and without the use of foreign catalyst. Scanning electron microscopy (SEM) observation showed that the as-grown sample consists of bulk ZnO crystal on the substrate surface with nanowires growing from this base. Growth mechanism of the observed morphology is suggested to be governed by the change of zinc vapour supersaturation during the growth process. X-ray diffraction (XRD) measurement was used to identify the crystalline phase of the nanowires. Optical properties of the nanowires were investigated using Raman scattering and photoluminescence (PL). The appearance of dominant, Raman active E2 (high) phonon mode in the Raman spectrum has confirmed the wurtzite hexagonal phase of the nanowires. With above bandgap excitation the low temperature PL recombination is dominated by donor bound exciton luminescence at -3.37 eV with a narrow full width at half maximum. Free exciton emission is also seen at low temperature and can be observed up to room temperature. The optical data indicates that the grown nanowires have high optical quality.

Structural and dielectric properties of Ba{sub 2}LaSbO{sub 6} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumari, Premlata, E-mail: k.premlata1@gmail.com; Dutta, Alo; Sinha, T. P.

2014-04-24

The ceramic Ba{sub 2}LaSbO{sub 6} (BLS) is synthesized by the solid state reaction technique. The Rietveld refinement of X-ray diffraction pattern at room temperature shows Monoclinic P2{sub 1}/n space group symmetry with lattice parameter a = 6.0720 (0) Å, b = 6.1058 (3) Å, c = 8.6016 (6) Å and β =89.7091 ° (8). Dielectric study of sample has been performed in the temperature range from 30 °C to 300 °C in the frequency range 50 Hz to 1.1 MHz. Dielectric relaxation peaks are observed in the imaginary part of complex permittivity of the spectra. The frequency dependence of realmore » and imaginary parts of dielectric permittivity is analyzed using Cole-Cole model. The temperature dependent relaxation time is found to obey the Arrhenius law having activation energy 0.48 eV which indicates that the conduction mechanism in the materials may be due to polaron hopping based on electron carriers. The complex plane plots of BLS shows the presence of both grain and grain boundary effects. Conductivity spectra follow the power law.« less

Hysteresis and change of transition temperature in thin films of Fe([Me{sub 2}Pyrz]{sub 3}BH){sub 2}, a new sublimable spin-crossover molecule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davesne, V.; Gruber, M.; Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131 Karlsruhe

2015-05-21

Thin films of the spin-crossover (SCO) molecule Fe([Me{sub 2}Pyrz]{sub 3}BH){sub 2} (Fe-pyrz) were sublimed on Si/SiO{sub 2} and quartz substrates, and their properties investigated by X-ray absorption and photoemission spectroscopies, optical absorption, atomic force microscopy, and superconducting quantum interference device. Contrary to the previously studied Fe(phen){sub 2}(NCS){sub 2}, the films are not smooth but granular. The thin films qualitatively retain the typical SCO properties of the powder sample (SCO, thermal hysteresis, soft X-ray induced excited spin-state trapping, and light induced excited spin-state trapping) but present intriguing variations even in micrometer-thick films: the transition temperature decreases when the thickness is decreased,more » and the hysteresis is affected. We explain this behavior in the light of recent studies focusing on the role of surface energy in the thermodynamics of the spin transition in nano-structures. In the high-spin state at room temperature, the films have a large optical gap (∼5 eV), decreasing at thickness below 50 nm, possibly due to film morphology.« less

Extreme ultraviolet probing of nonequilibrium dynamics in high energy density germanium

NASA Astrophysics Data System (ADS)

Principi, E.; Giangrisostomi, E.; Mincigrucci, R.; Beye, M.; Kurdi, G.; Cucini, R.; Gessini, A.; Bencivenga, F.; Masciovecchio, C.

2018-05-01

Intense femtosecond infrared laser pulses induce a nonequilibrium between thousands of Kelvin hot valence electrons and room-temperature ions in a germanium sample foil. The evolution of this exotic state of matter is monitored with time-resolved extreme ultraviolet absorption spectroscopy across the Ge M2 ,3 edge (≃30 eV ) using the FERMI free-electron laser. We analyze two distinct regimes in the ultrafast dynamics in laser-excited Ge: First, on a subpicosecond time scale, the electron energy distribution thermalizes to an extreme temperature unreachable in equilibrium solid germanium; then, during the following picoseconds, the lattice reacts strongly altering the electronic structure and resulting in melting to a metallic state alongside a breakdown of the local atomic order. Data analysis, based on a hybrid approach including both numerical and analytical calculations, provides an estimation of the electron and ion temperatures, the electron density of states, the carrier-phonon relaxation time, as well as the carrier density and lattice heat capacity under those extreme nonequilibrium conditions. Related structural anomalies, such as the occurrence of a transient low-density liquid phase and the possible drop in lattice heat capacity are discussed.

Growth of semiconducting GaN hollow spheres and nanotubes with very thin shells via a controllable liquid gallium-gas interface chemical reaction.

PubMed

Yin, Long-Wei; Bando, Yoshio; Li, Mu-Sen; Golberg, Dmitri

2005-11-01

An in situ liquid gallium-gas interface chemical reaction route has been developed to synthesize semiconducting hollow GaN nanospheres with very small shell size by carefully controlling the synthesis temperature and the ammonia reaction gas partial pressure. In this process the gallium droplet does not act as a catalyst but rather as a reactant and a template for the formation of hollow GaN structures. The diameter of the synthesized hollow GaN spheres is typically 20-25 nm and the shell thickness is 3.5-4.5 nm. The GaN nanotubes obtained at higher synthesis temperatures have a length of several hundreds of nanometers and a wall thickness of 3.5-5.0 nm. Both the hollow GaN spheres and nanotubes are polycrystalline and are composed of very fine GaN nanocrystalline particles with a diameter of 3.0-3.5 nm. The room-temperature photoluminescence (PL) spectra for the synthesized hollow GaN spheres and nanotubes, which have a narrow size distribution, display a sharp, blue-shifted band-edge emission peak at 3.52 eV (352 nm) due to quantum size effects.

Characterization of bismuth selenide (Bi2Se3) thin films obtained by evaporating the hydrothermally synthesised nano-particles

NASA Astrophysics Data System (ADS)

Indirajith, R.; Rajalakshmi, M.; Gopalakrishnan, R.; Ramamurthi, K.

2016-03-01

Bismuth selenide (Bi2Se3) was synthesized by hydrothermal method at 200 °C and confirmed by powder X-ray diffraction (XRD) studies. The synthesized material was utilized to deposit bismuth selenide thin films at various substrate temperatures (Room Temperature-RT, 150 °C, 250 °C, 350 °C and 450 °C) by electron beam evaporation technique. XRD study confirmed the polycrystalline nature of the deposited Bi2Se3films. Optical transmittance spectra showed that the deposited (at RT) films acquire relatively high average transmittance of 60%in near infrared region (1500-2500 nm). An indirect allowed optical band gap calculated from the absorption edge for the deposited films is ranging from 0.62 to 0.8 eV. Scanning electron and atomic force microscopy analyses reveal the formation of nano-scale sized particles on the surface and that the nature of surface microstructures is influenced by the substrate temperature. Hall measurements showed improved electrical properties, for the films deposited at 350 °C which possess 2.8 times the mobility and 0.9 times the resistivity of the films deposited at RT.

Evaluation of Data Retention Characteristics for Ferroelectric Random Access Memories (FRAMs)

NASA Technical Reports Server (NTRS)

Sharma, Ashok K.; Teverovsky, Alexander

2001-01-01

Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

Interfacial ionic 'liquids': connecting static and dynamic structures.

PubMed

Uysal, Ahmet; Zhou, Hua; Feng, Guang; Lee, Sang Soo; Li, Song; Cummings, Peter T; Fulvio, Pasquale F; Dai, Sheng; McDonough, John K; Gogotsi, Yury; Fenter, Paul

2015-01-28

It is well known that room temperature ionic liquids (RTILs) often adopt a charge-separated layered structure, i.e. with alternating cation- and anion-rich layers, at electrified interfaces. However, the dynamic response of the layered structure to temporal variations in applied potential is not well understood. We used in situ, real-time x-ray reflectivity to study the potential-dependent electric double layer (EDL) structure of an imidazolium-based RTIL on charged epitaxial graphene during potential cycling as a function of temperature. The results suggest that the graphene-RTIL interfacial structure is bistable in which the EDL structure at any intermediate potential can be described by the combination of two extreme-potential structures whose proportions vary depending on the polarity and magnitude of the applied potential. This picture is supported by the EDL structures obtained by fully atomistic molecular dynamics simulations at various static potentials. The potential-driven transition between the two structures is characterized by an increasing width but with an approximately fixed hysteresis magnitude as a function of temperature. The results are consistent with the coexistence of distinct anion- and cation-adsorbed structures separated by an energy barrier (∼0.15 eV).

Low Temperature Photoluminescence of PVT Grown ZnSe and ZnSeTe

NASA Technical Reports Server (NTRS)

Wang, Ling Jun; Su, Ching-Hua; Lehoczky, S. L.

1999-01-01

ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.

Defect healing at room temperature in pentacene thin films and improved transistor performance

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Meier, Fabian; Mattenberger, Kurt; Batlogg, Bertram

2007-11-01

We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10-8mbar ), the device performance is found to improve with time. The effective field-effect mobility increases by as much as a factor of 2 and mobilities up to 0.45cm2/Vs were achieved. In addition, the contact resistance decreases by more than an order of magnitude and there is a significant reduction in current hysteresis. Oxygen and nitrogen exposure as well as annealing experiments show the improvement of the electronic parameters to be driven by a thermally promoted process and not by chemical doping. In order to extract the spectral density of trap states from the transistor characteristics, we have implemented a powerful scheme which allows for a calculation of the trap densities with high accuracy in a straightforward fashion. We show the performance improvement to be due to a reduction in the density of shallow traps ⩽0.15eV from the valence band edge, while the energetically deeper traps are essentially unaffected. This work contributes to an understanding of the shallow traps in organic semiconductors and identifies structural point defects within the grains of the polycrystalline thin films as a major cause.

An origin of orange (2 eV) photoluminescence in SiO{sub 2} films implanted with high Si{sup +}-ion doses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyschenko, I. E., E-mail: tys@isp.nsc.ru

2015-09-15

The photoluminescence and photoluminescence excitation spectra of SiO{sub 2} films implanted with high (3 at %) Si{sup +}-ion doses are studied in relation to the temperature of postimplantation annealing. It is shown that two photoluminescence bands with peaks at 2.7 and 2 eV are dominant in the spectra. As the annealing temperature is increased, the relation between the intensities of the 2.7 and 2 eV bands changes in favor of the former one. Both of the photoluminescence bands have their main excitation peak at the energy 5.1 eV. The excitation spectrum of the ∼2-eV band exhibits also peaks at 3.8more » and 4.6 eV. It is concluded that, in the implanted SiO{sub 2} films, the orange photoluminescence band originates from radiative transitions between levels of centers associated with a deficiency of oxygen (≡Si–Si≡ or =Si:) and the levels of nonbridging oxygen (≡Si–O•)« less

Impact of temperature during He+ implantation on deuterium retention in tungsten, tungsten with carbon deposit and tungsten carbide

NASA Astrophysics Data System (ADS)

Oya, Yasuhisa; Sato, Misaki; Li, Xiaochun; Yuyama, Kenta; Fujita, Hiroe; Sakurada, Shodai; Uemura, Yuki; Hatano, Yuji; Yoshida, Naoaki; Ashikawa, Naoko; Sagara, Akio; Chikada, Takumi

2016-02-01

Temperature dependence on deuterium (D) retention for He+ implanted tungsten (W) was studied by thermal desorption spectroscopy (TDS) to evaluate the tritium retention behavior in W. The activation energies were evaluated using Hydrogen Isotope Diffusion and Trapping (HIDT) simulation code and found to be 0.55 eV, 0.65 eV, 0.80 eV and 1.00 eV. The heating scenarios clearly control the D retention behavior and, dense and large He bubbles could work as a D diffusion barrier toward the bulk, leading to D retention enhancement at lower temperature of less than 430 K, even if the damage was introduced by He+ implantation. By comparing the D retention for W, W with carbon deposit and tungsten carbide (WC), the dense carbon layer on the surface enhances the dynamic re-emission of D as hydrocarbons, and induces the reduction of D retention. However, by He+ implantation, the D retention was increased for all the samples.

Structural, magnetic and magnetocaloric properties of Co-doped nanocrystalline La0.7Te0.3Mn0.7Co0.3O3

NASA Astrophysics Data System (ADS)

Meenakshi; Kumar, Amit; Mahato, Rabindra Nath

2018-02-01

Structural, magnetic and magnetocaloric properties of the nanocrystalline La0.7Te0.3Mn0.7Co0.3O3 perovskite manganite were investigated. X-ray diffraction pattern indicated that the nanocrystalline sample crystallized in orthorhombic crystal structure with Pbnm space group. The average particle size was calculated using scanning electron microscope and it was found to be ∼150 nm. Temperature dependence magnetization measurements revealed ferromagnetic-paramagnetic phase transition and the Curie temperature (TC) was found to be ∼201 K. Field dependence magnetization showed the hysteresis at low temperature with a coercive field of ∼0.34 T and linear dependence at high temperature corresponds to paramagnetic region. Based on the magnetic field dependence magnetization data, the maximum entropy change and relative cooling power (RCP) were estimated and the values were 1.002 J kg-1 K-1 and 90 J kg-1 for a field change of 5 T respectively. Temperature dependent resistivity ρ(T) data exhibited semiconducting-like behavior at high temperature and the electrical transport was well explained by Mott's variable-range hopping (VRH) conduction mechanism in the temperature range of 250 K-300 K. Using the VRH fit, the calculated hoping distance (Rh) at 300 K was 54.4 Å and density of states N(EF) at room temperature was 7.04 × 1018 eV-1 cm-3. These values were comparable to other semiconducting oxides.

CsSnI[subscript 3]: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chung, In; Song, Jung-Hwan; Im, Jino

CsSnI{sub 3} is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI{sub 3} have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI{sub 3}, coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI{submore » 3}. The black orthorhombic form of CsSnI{sub 3} demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI{sub 3} indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of {approx} 10{sup 17} cm{sup -3} and a hole mobility of {approx} 585 cm{sup 2} V{sup -1} s{sup -1}. The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI{sub 3} is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.« less

Reference breast temperature: proposal of an equation.

PubMed

Souza, Gladis Aparecida Galindo Reisemberger de; Brioschi, Marcos Leal; Vargas, José Viriato Coelho; Morais, Keli Cristiane Correia; Dalmaso Neto, Carlos; Neves, Eduardo Borba

2015-01-01

To develop an equation to estimate the breast reference temperature according to the variation of room and core body temperatures. Four asymptomatic women were evaluated for three consecutive menstrual cycles. Using thermography, the temperature of breasts and eyes was measured as indirect reference of core body and room temperatures. To analyze the thermal behavior of the breasts during the cycle, the core body and room temperatures were normalized by means of a mathematical equation. We performed 180 observations and the core temperature had the highest correlation with the breast temperature, followed by room temperature. The proposed prediction model could explain 45.3% of the breast temperature variation, with variable room temperature variable; it can be accepted as a way to estimate the reference breast temperature at different room temperatures. The average breast temperature in healthy women had a direct relation with the core and room temperature and can be estimated mathematically. It is suggested that an equation could be used in clinical practice to estimate the normal breast reference temperature in young women, regardless of the day of the cycle, therefore assisting in evaluation of anatomical studies.

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

NASA Astrophysics Data System (ADS)

Nagaraju, G.; Ravindranatha Reddy, K.; Rajagopal Reddy, V.

2017-11-01

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights (BH) of as-deposited and 200 °C annealed SBDs are 0.80 eV ( I-V)/0.93 eV (C-V) and 0.87 eV (I-V)/1.03 eV (C-V). However, the BH rises to 0.99 eV (I-V)/　1.18 eV(C-V) and then slightly deceases to 0.92 eV (I-V)/1.03 eV (C-V) after annealing at 300 °C and 400 °C. The utmost BH is attained after annealing at 300 °C and thus the optimum annealing for SBD is 300 °C. By applying Cheung’s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung’s and Ψ S-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the N SS decreases up to 300 °C annealing and then slightly increases after annealing at 400 °C. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.

Enterovirus-D68 (EV-D68) in pediatric patients with respiratory infection: The circulation of a new B3 clade in Italy.

PubMed

Piralla, Antonio; Principi, Nicola; Ruggiero, Luca; Girello, Alessia; Giardina, Federica; De Sando, Elisabetta; Caimmi, Silvia; Bianchini, Sonia; Marseglia, Gian Luigi; Lunghi, Giovanna; Baldanti, Fausto; Esposito, Susanna

In recent years, several outbreaks due to Enterovirus D-68 (EV-D68) have been reported, and it was confirmed that the virus can cause upper and lower respiratory tract diseases and be associated with the development of neurological problems. The main aim of this research was to study the genetic characteristics of EV-D68 strains that were circulating in Italy identified during an outbreak of an EV-D68 infection that occurred in Italy during the period March-October 2016. A retrospective study of the circulation of different types and subtypes of EV-D68 was performed. Nasopharyngeal swabs were collected from March 2016 through October 2016 in children admitted to the Emergency Room with respiratory diseases. Among 390 children, 22 (59.1% males; mean age 47 months) were found to be infected by EV-D68 and most of them were immunocompetent (72.7%). Pneumonia was diagnosed in 12 (54.5%) children. Phylogenetic analysis of the VP1 region showed that all the strains identified in this study belonged to clade B3. Within B3 subclade, the Italian EV-D68 strains were most closely related to strains detected in Southern China in 2015 as well as to strains detected in US and the Netherlands in 2016. These results showed that EV-D68 infections are a common cause of lower respiratory illness in pediatric age. The circulation of one EV-D68 lineage has been proven in Italy and in the European region during 2016. However, further studies are required to investigate whether some strains or lineages may possess a higher affinity for the lower airway or central nervous system. Copyright © 2018 Elsevier B.V. All rights reserved.

Global synthesis of the temperature sensitivity of leaf litter breakdown in streams and rivers

DOE PAGES

Follstad Shah, Jennifer J.; Kominoski, John S.; Ardón, Marcelo; ...

2017-02-28

Streams and rivers are important conduits of terrestrially derived carbon (C) to atmospheric and marine reservoirs. Leaf litter breakdown rates are expected to increase as water temperatures rise in response to climate change. The magnitude of increase in breakdown rates is uncertain, given differences in litter quality and microbial and detritivore community responses to temperature, factors that can influence the apparent temperature sensitivity of breakdown and the relative proportion of C lost to the atmosphere vs. stored or transported downstream. We synthesized 1025 records of litter breakdown in streams and rivers to quantify its temperature sensitivity, as measured by themore » activation energy (Ea, in eV). Temperature sensitivity of litter breakdown varied among twelve plant genera for which Ea could be calculated. Higher values of Ea were correlated with lower-quality litter, but these correlations were influenced by a single, N-fixing genus (Alnus). Ea values converged when genera were classified into three breakdown rate categories, potentially due to continual water availability in streams and rivers modulating the influence of leaf chemistry on breakdown. Across all data representing 85 plant genera, the Ea was 0.34 ± 0.04 eV, or approximately half the value (0.65 eV) predicted by metabolic theory. Our results indicate that average breakdown rates may increase by 5–21% with a 1–4 °C rise in water temperature, rather than a 10–45% increase expected, according to metabolic theory. Differential warming of tropical and temperate biomes could result in a similar proportional increase in breakdown rates, despite variation in Ea values for these regions (0.75 ± 0.13 eV and 0.27 ± 0.05 eV, respectively). The relative proportions of gaseous C loss and organic matter transport downstream should not change with rising temperature given that Ea values for breakdown mediated by microbes alone and microbes plus detritivores were similar at the global scale.« less

Global synthesis of the temperature sensitivity of leaf litter breakdown in streams and rivers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Follstad Shah, Jennifer J.; Kominoski, John S.; Ardón, Marcelo

Streams and rivers are important conduits of terrestrially derived carbon (C) to atmospheric and marine reservoirs. Leaf litter breakdown rates are expected to increase as water temperatures rise in response to climate change. The magnitude of increase in breakdown rates is uncertain, given differences in litter quality and microbial and detritivore community responses to temperature, factors that can influence the apparent temperature sensitivity of breakdown and the relative proportion of C lost to the atmosphere vs. stored or transported downstream. We synthesized 1025 records of litter breakdown in streams and rivers to quantify its temperature sensitivity, as measured by themore » activation energy (Ea, in eV). Temperature sensitivity of litter breakdown varied among twelve plant genera for which Ea could be calculated. Higher values of Ea were correlated with lower-quality litter, but these correlations were influenced by a single, N-fixing genus (Alnus). Ea values converged when genera were classified into three breakdown rate categories, potentially due to continual water availability in streams and rivers modulating the influence of leaf chemistry on breakdown. Across all data representing 85 plant genera, the Ea was 0.34 ± 0.04 eV, or approximately half the value (0.65 eV) predicted by metabolic theory. Our results indicate that average breakdown rates may increase by 5–21% with a 1–4 °C rise in water temperature, rather than a 10–45% increase expected, according to metabolic theory. Differential warming of tropical and temperate biomes could result in a similar proportional increase in breakdown rates, despite variation in Ea values for these regions (0.75 ± 0.13 eV and 0.27 ± 0.05 eV, respectively). The relative proportions of gaseous C loss and organic matter transport downstream should not change with rising temperature given that Ea values for breakdown mediated by microbes alone and microbes plus detritivores were similar at the global scale.« less

Experimental room temperature hohlraum performance study on the National Ignition Facility

NASA Astrophysics Data System (ADS)

Ralph, J. E.; Strozzi, D.; Ma, T.; Moody, J. D.; Hinkel, D. E.; Callahan, D. A.; MacGowan, B. J.; Michel, P.; Kline, J. L.; Glenzer, S. H.; Albert, F.; Benedetti, L. R.; Divol, L.; MacKinnon, A. J.; Pak, A.; Rygg, J. R.; Schneider, M. B.; Town, R. P. J.; Widmann, K.; Hsing, W.; Edwards, M. J.

2016-12-01

Room temperature or "warm" (273 K) indirect drive hohlraum experiments have been conducted on the National Ignition Facility with laser energies up to 1.26 MJ and compared to similar cryogenic or "cryo" (˜20 K) experiments. Warm experiments use neopentane (C5H12) as the low pressure hohlraum fill gas instead of helium, and propane (C3H8) to replace the cryogenic DT or DHe3 capsule fill. The increased average Z of the hohlraum fill leads to increased inverse bremsstrahlung absorption and an overall hotter hohlraum plasma in simulations. The cross beam energy transfer (CBET) from outer laser beams (pointed toward the laser entrance hole) to inner beams (pointed at the equator) was inferred indirectly from measurements of Stimulated Raman Scattering (SRS). These experiments show that a similar hot spot self-emission shape can be produced with less CBET in warm hohlraums. The measured inner cone SRS reflectivity (as a fraction of incident power neglecting CBET) is ˜2.5 × less in warm than cryo shots with similar hot spot shapes, due to a less need for CBET. The measured outer-beam stimulated the Brillouin scattering power that was higher in the warm shots, leading to a ceiling on power to avoid the optics damage. These measurements also show that the CBET induced by the flow where the beams cross can be effectively mitigated by a 1.5 Å wavelength shift between the inner and outer beams. A smaller scale direct comparison indicates that warm shots give a more prolate implosion than cryo shots with the same wavelength shift and pulse shape. Finally, the peak radiation temperature was found to be between 5 and 7 eV higher in the warm than the corresponding cryo experiments after accounting for differences in backscatter.

Strong carrier localization in stacking faults in semipolar (11-22) GaN

NASA Astrophysics Data System (ADS)

Okur, Serdal; Monavarian, Morteza; Das, Saikat; Izyumskaya, Natalia; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2015-03-01

The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar (1122) GaN on m-sapphire substrate have been investigated in detail using steady-state photoluminescence (PL) and time- and polarization-resolved PL. We demonstrate that the carrier recombination dynamics are substantially influenced due to strong carrier localization in the stacking faults. In addition to nonradiative recombination, carrier trapping/detrapping and carrier transfer between the stacking faults and donors are also found to be among the mechanisms affecting the recombination dynamics at different temperatures. PL decay times of both I1-type BSF and 3.31 eV SF (E-type BSF or prismatic stacking fault) do not show temperature dependence up to 80 K while 3.31 eV SF exhibits longer PL decay times (~3 ns) at low temperatures as compared to I1-type BSF (~1 ns), indicative of lower efficiency for radiative recombination. After 80 K, PL decay times decreased by power of ~-1 and ~-2 for 3.31 eV SF and I1-type BSF, respectively. It is obtained from radiative decay times with respect to temperature that the carrier localization becomes higher in I1-type BSF compared to 3.31 eV SF increasing the temperature. I1-type BSF also shows higher PL intensity, which is attributed to larger density, and therefore, larger contribution to recombination dynamics as compared to other type of stacking faults. Polarization-resolved PL measurements also revealed that the degree of polarization for the I1-type BSF (0.30) was twice that for the 3.31 eV SF.

Fed Up with Delays, a President Pushes To Outsource Technology Operations.

ERIC Educational Resources Information Center

Olsen, Florence

2002-01-01

Discusses how officials at Salt Lake Community College decided the only way they could get the kind of technology service they needed was to hire a company to run the operation; the plan will not save money, but seeks better service and room for expansion. (EV)

Office Hours as You Like Them: Integrating Real-Time Chats into the Course Media Mix.

ERIC Educational Resources Information Center

McKeage, Kim

2001-01-01

Reports on one professor's use of integrated synchronous electronic office hours (i.e., a "chat room") with asynchronous course conferencing (i.e., email) in a class on introductory marketing. Describes its uses, limitations, benefits, potential problems, and results from a student survey. (EV)

Preparation and electrical-property characterization of poly(vinyl chloride)-derived carbon nanosheet by ion beam irradiation-induced carbon clustering and carbonization

NASA Astrophysics Data System (ADS)

Jung, Chan-Hee; Sohn, Joon-Yong; Kim, Hyo-Sub; Hwang, In-Tae; Lee, Hong-Joon; Shin, Junhwa; Choi, Jae-Hak

2018-05-01

In this work, we demonstrated that carbon nanosheet (CNS) can easily be produced by a room-temperature, solid-state proton irradiation-induced clustering of poly(vinyl chloride) (PVC) films followed by carbonization. The results of the optical, chemical, and structural analyses revealed that oxidized and sp2-hybridized carbon clusters were effectively created in the PVC thin film by combined dehydrochlorination and inter-coupling reactions during proton irradiation. This was further converted to pseudo-hexagonally-structured nano-crystalline CNS with 2-D symmetry and metallic transporting character by high-temperature treatment. As a result, the CNS exhibited a very high electrical conductivity (587 S/cm) without a significant change in their thickness, a low surface roughness (0.36 nm), and a high work function (5.11 eV). These findings demonstrate that the radiation-based approach opens new avenues for the design and development of 2-D CNS as a graphene allotrope for the application of electronic devices, including field-effect transistors, electric heating devices, biosensors, supercapacitors, and fuel cells.

The effects of radiation damage and annealing on the microstructure of a natural zircon observed by TDPAC

NASA Astrophysics Data System (ADS)

Lacentre, P.; Caracoche, M. C.

1994-06-01

The hyperfine interaction of a natural brazilian zircon sand was determined at zirconium sites between room temperature and 1393K by means of the time-differential perturbed-angular-correlations technique. Complementary measurements of x-ray diffraction, differential thermal analysis and density were also performed. It was found that the starting compound was an intermediate zircon of 4.62 g/cm3 density consisting of a mixture of slightly disordered and highly defectuous materials in a ratio quite different from that determined for non brazilian zircons self irradiated by the same α-dose. Heating the sample resulted in the gradual recovery of the periodic crystalline structure in a two-stage process characterized by activation energies of 3.88 and 4.68 eV. An additional zirconium compound, for which an interpretation is proposed, was observed to be present in a low and nearly constant proportion up to 1393K, temperature at which it evidenced a reduction. A final measurement at RT revealed that this last change, as well as the second annealing stage, were of reversible nature.

Hole mobilities and the effective Hall factor in p-type GaAs

NASA Astrophysics Data System (ADS)

Wenzel, M.; Irmer, G.; Monecke, J.; Siegel, W.

1997-06-01

We prove the effective Hall factor in p-GaAs to be larger than values discussed in the literature up to now. The scattering rates for the relevant scattering mechanisms in p-GaAs have been recalculated after critical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of temperature which can be compared with measured data. Theoretical Hall factors in the heavy and light hole bands and an effective Hall factor result. The calculated room temperature values of the drift mobility and of the effective Hall factor are 118 cm2/V s and 3.6, respectively. The fitted acoustic deformation potential E1=7.9 eV and the fitted optical coupling constant DK=1.24×1011 eV/m are close to values published before. It is shown that the measured strong dependence of the Hall mobility on the Hall concentration is not mainly caused by scattering by ionized impurities but by the dependence of the effective Hall factor on the hole concentration.

The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.

PubMed

Qi, Jing Shan; Huang, Jian Yu; Feng, Ji; Shi, Da Ning; Li, Ju

2011-05-24

Graphene is an interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on-off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube-graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor-metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene-curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, if produced, would be chemically stable at room temperature under normal gas environments.

Magneto Tuning of a Ferrite Dielectric Resonator Antenna Based on LiFe5O8 Matrix

NASA Astrophysics Data System (ADS)

de Morais, J. E. V.; de Castro, A. J. N.; Oliveira, R. G. M.; do Carmo, F. F.; Sales, A. J. M.; Sales, J. C.; Silva, M. A. S.; Gouveia, D. X.; Costa, M. M.; Rodrigues, A. R.; Sombra, A. S. B.

2018-04-01

LiFe5O8 (LFO) spinel-like material has been studied for use in ferrite resonator antennas (FRAs). Antenna parameters such as gain and return loss were greatly affected when an external magnetic field was applied to the FRA. The temperature coefficient of the resonant frequency (τ f ) for the FRA presented a value of - 482.16 ppm/°C. The magnetic hysteresis results showed that the LFO was a soft ferrite, considering the values of the remanent magnetization (M r = 5.95 emu g-1), coercive field (0.76 mT), and saturation magnetization (32.15 emu g-1). The magnetodielectric resonator presented a tuning effect in the resonant frequency as a function of the external magnetic field. The antenna bandwidth was also affected by the presence of the magnetic field. LFO is a soft ferrite with applications in microwave circuits, antennas, and devices for operation at microwave frequencies due to its magnetization and demagnetization properties. Impedance study revealed increasing conductivity from room to higher temperature with low activation energy (0.36 eV).

Benzothienobenzothiophene-Based Molecular Conductors: High Conductivity, Large Thermoelectric Power Factor, and One-Dimensional Instability.

PubMed

Kiyota, Yasuhiro; Kadoya, Tomofumi; Yamamoto, Kaoru; Iijima, Kodai; Higashino, Toshiki; Kawamoto, Tadashi; Takimiya, Kazuo; Mori, Takehiko

2016-03-23

On the basis of an excellent transistor material, [1]benzothieno[3,2-b][1]benzothiophene (BTBT), a series of highly conductive organic metals with the composition of (BTBT)2XF6 (X = P, As, Sb, and Ta) are prepared and the structural and physical properties are investigated. The room-temperature conductivity amounts to 4100 S cm(-1) in the AsF6 salt, corresponding to the drift mobility of 16 cm(2) V(-1) s(-1). Owing to the high conductivity, this salt shows a thermoelectric power factor of 55-88 μW K(-2) m(-1), which is a large value when this compound is regarded as an organic thermoelectric material. The thermoelectric power and the reflectance spectrum indicate a large bandwidth of 1.4 eV. These salts exhibit an abrupt resistivity jump under 200 K, which turns to an insulating state below 60 K. The paramagnetic spin susceptibility, and the Raman and the IR spectra suggest 4kF charge-density waves as an origin of the low-temperature insulating state.

Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

NASA Astrophysics Data System (ADS)

Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

2018-02-01

In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

NASA Technical Reports Server (NTRS)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Negative thermal quenching of the defects in GaInP top cell with temperature-dependent photoluminescence analysis

NASA Astrophysics Data System (ADS)

Junling, Wang; Rui, Wu; Tiancheng, Yi; Yong, Zheng; Rong, Wang

2018-01-01

Temperature-dependent photoluminescence (PL) measurements were carried out to investigate the irradiation effects of 1.0 MeV electrons on the n+- p GaInP top cell of GaInP/GaAs/Ge triple-junction solar cells in the 10-300 K temperature range. The PL intensities plotted against inverse temperature in an Arrhenius plot shows a thermal quenching behavior from 10 K to 140 K and an unusual negative thermal quenching (NTQ) behavior from 150 K to 300 K. The appearance of the PL thermal quenching with increasing temperature confirms that there is a nonradiative recombination center, i.e., the H2 hole trap located at Ev + 0.55 eV, in the cell after electron irradiation. The PL negative thermal quenching behavior may tentatively be attributed to the intermediate states at an energy level of 0.05 eV within the band gap in GaInP top cell.

High-resolution grazing-incidence grating spectrometer for temperature measurements of low-Z ions emitting in the 100-300 Å spectral banda)

NASA Astrophysics Data System (ADS)

Widmann, K.; Beiersdorfer, P.; Magee, E. W.; Boyle, D. P.; Kaita, R.; Majeski, R.

2014-11-01

We have constructed a high-resolution grazing-incidence spectrometer designed for measuring the ion temperature of low-Z elements, such as Li+ or Li2 +, which radiate near 199 Å and 135 Å, respectively. Based on measurements at the Livermore Electron Beam Ion Trap we have shown that the instrumental resolution is better than 48 mÅ at the 200 Å setting and better than 40 mÅ for the 135-Å range. Such a high spectral resolution corresponds to an instrumental limit for line-width based temperature measurements of about 45 eV for the 199 Å Li+ and 65 eV for the 135 Å Li2 + lines. Recently obtained survey spectra from the Lithium Tokamak Experiment at the Princeton Plasma Physics Laboratory show the presence of these lithium emission lines and the expected core ion temperature of approximately 70 eV is sufficiently high to demonstrate the feasibility of utilizing our high-resolution spectrometer as an ion-temperature diagnostic.

Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy

NASA Astrophysics Data System (ADS)

Lioliou, G.; Barnett, A. M.

2016-11-01

Results characterizing GaAs p+-i-n+ mesa photodiodes with a 10 μm i layer for their spectral response under illumination of X-rays and beta particles are presented. A total of 22 devices, having diameters of 200 μm and 400 μm, were electrically characterized at room temperature. All devices showed comparable characteristics with a measured leakage current ranging from 4 nA/cm2 to 67 nA/cm2 at an internal electric field of 50 kV/cm. Their unintentionally doped i layers were found to be almost fully depleted at 0 V due to their low doping density. 55Fe X-ray spectra were obtained using one 200 μm diameter device and one 400 μm diameter device. The best energy resolution (FWHM at 5.9 keV) achieved was 625 eV using the 200 μm and 740 eV using the 400 μm diameter device, respectively. Noise analysis showed that the limiting factor for the energy resolution of the system was the dielectric noise; if this noise was eliminated by better design of the front end of the readout electronics, the achievable resolution would be 250 eV. 63Ni beta particle spectra obtained using the 200 μm diameter device showed the potential utility of these detectors for electron and beta particle detection. The development of semiconductor electron spectrometers is important particularly for space plasma physics; such devices may find use in future space missions to study the plasma environment of Jupiter and Europa and the predicted electron impact excitation of water vapor plumes from Europa hypothesized as a result of recent Hubble Space Telescope (HST) UV observations.

a Photoemission Study of the Electronic Structure Induced by Potassium Adsorption on TiO2(110)

NASA Astrophysics Data System (ADS)

Heise, Rainer; Courths, Ralf

Electronic structure effects induced by potassium adsorption up to one monolayer (ML) on a nearly stoichiometric TiO2(110) surface has been studied by means of angle-resolved photoemission spectroscopy (ARUPS and ARXPS) from valence states and core levels. In agreement with the observations on K/TiO2(100) [P.J. Hardman et al., Surf. Sci. 269/270, 677 (1992)], potassium adsorption at room temperature leads—due to K-to-substrate charge transfer—to the reduction of surface Ti ions (to nominally Ti3+ ions), evidenced by lowered Ti 2p core-level binding energy (ΔBE=-1.6 eV) and occupation of Ti 3d-like band-gap states centered at 0.9 eV BE. The gap-state intensity exhibits a pronounced maximum at 0.37 ML coverage, where the work function has a weak minimum. This behavior is in agreement with a ionic-to-neutral transition of the K-substrate bonding with increasing K coverage, as suggested recently [Souda et al., Surf. Sci. 285, 265 (1993)]. Annealing of a surface precovered with 0.27 ML potassium up to 1000 K results in metallization of the surface, evidenced by (i) the occupation of a second gap-state centered at 0.4 BE and with a considerable state-density at the Fermi energy, and (ii) Ti 2p core-levels lowered by 3.2 eV in BE (nominally “Ti2+” ions). This dramatic reduction of the surface is healed out with complete desorption of potassium. A discussion in terms of desorption of KOx species and oxygen diffusion from the bulk to the surface is given.

Temperature dependent dielectric relaxation and ac-conductivity of alkali niobate ceramics studied by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Yadav, Abhinav; Mantry, Snigdha Paramita; Fahad, Mohd.; Sarun, P. M.

2018-05-01

Sodium niobate (NaNbO3) ceramics is prepared by conventional solid state reaction method at sintering temperature 1150 °C for 4 h. The structural information of the material has been investigated by X-ray diffraction (XRD) and Field emission scanning electron microscopy (FE-SEM). The XRD analysis of NaNbO3 ceramics shows an orthorhombic structure. The FE-SEM micrograph of NaNbO3 ceramics exhibit grains with grain sizes ranging between 1 μm to 5 μm. The surface coverage and average grain size of NaNbO3 ceramics are found to be 97.6 % and 2.5 μm, respectively. Frequency dependent electrical properties of NaNbO3 is investigated from room temperature to 500 °C in wide frequency range (100 Hz-5 MHz). Dielectric constant, ac-conductivity, impedance, modulus and Nyquist analysis are performed. The observed dielectric constant (1 kHz) at transition temperature (400 °C) are 975. From conductivity analysis, the estimated activation energy of NaNbO3 ceramics is 0.58 eV at 10 kHz. The result of Nyquist plot shows that the electrical behavior of NaNbO3 ceramics is contributed by grain and grain boundary responses. The impedance and modulus spectrum asserts that the negative temperature coefficient of resistance (NTCR) behavior and non-Debye type relaxation in NaNbO3.

Threshold irradiation dose for amorphization of silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snead, L.L.; Zinkle, S.J.

1997-04-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenonmore » ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.« less

Effect of temperature on the low-linear energy transfer radiolysis of the ceric-cerous sulfate dosimeter: a Monte Carlo simulation study.

PubMed

Kohan, Leila Mirsaleh; Meesungnoen, Jintana; Sanguanmith, Sunuchakan; Meesat, Ridthee; Jay-Gerin, Jean-Paul

2014-05-01

The stochastic modeling of the (60)Co γ/fast-electron radiolysis of the ceric-cerous chemical dosimeter has been performed as a function of temperature from 25-350°C. The system used is a dilute solution of ceric sulfate and cerous sulfate in aqueous 0.4 M sulfuric acid. In this system, H(•) (or HO2(•) in the presence of dissolved oxygen) and H2O2 produced by the radiolytic decomposition of water both reduce Ce(4+) ions to Ce(3+) ions, while (•)OH radicals oxidize the Ce(3+) present in the solution back to Ce(4+). The net Ce(3+) yield is given by G(Ce(3+)) = g(H(•)) + 2 g(H2O2) - g((•)OH), where the primary (or "escape") yields of H(•), H2O2 and (•)OH are represented by lower case g's. At room temperature, G(Ce(3+)) has been established to be 2.44 ± 0.8 molecules/100 eV. In this work, we investigated the effect of temperature on the yield of Ce(3+) and on the underlying chemical reaction kinetics using Monte Carlo track chemistry simulations. The simulations showed that G(Ce(3+)) is time dependent, a result of the differences in the lifetimes of the reactions that make up the radiolysis mechanism. Calculated G(Ce(3+)) values were found to decrease almost linearly with increasing temperature up to about 250°C, and are in excellent agreement with available experimental data. In particular, our calculations confirmed previous estimated values by Katsumura et al. (Radiat Phys Chem 1988; 32:259-63) showing that G(Ce(3+)) at ∼250°C is about one third of its value at room temperature. Above ∼250°C, our model predicted that G(Ce(3+)) would drop markedly with temperature until, instead of Ce(4+) reduction, Ce(3+) oxidation is observed. This drop is shown to occur as a result of the reaction of hydrogen atoms with water in the homogeneous chemical stage.

Reference breast temperature: proposal of an equation

PubMed Central

de Souza, Gladis Aparecida Galindo Reisemberger; Brioschi, Marcos Leal; Vargas, José Viriato Coelho; Morais, Keli Cristiane Correia; Dalmaso, Carlos; Neves, Eduardo Borba

2015-01-01

ABSTRACT Objective To develop an equation to estimate the breast reference temperature according to the variation of room and core body temperatures. Methods Four asymptomatic women were evaluated for three consecutive menstrual cycles. Using thermography, the temperature of breasts and eyes was measured as indirect reference of core body and room temperatures. To analyze the thermal behavior of the breasts during the cycle, the core body and room temperatures were normalized by means of a mathematical equation. Results We performed 180 observations and the core temperature had the highest correlation with the breast temperature, followed by room temperature. The proposed prediction model could explain 45.3% of the breast temperature variation, with variable room temperature variable; it can be accepted as a way to estimate the reference breast temperature at different room temperatures. Conclusion The average breast temperature in healthy women had a direct relation with the core and room temperature and can be estimated mathematically. It is suggested that an equation could be used in clinical practice to estimate the normal breast reference temperature in young women, regardless of the day of the cycle, therefore assisting in evaluation of anatomical studies. PMID:26761549

Studies on a.c. conductivity behaviour of milled carbon fibre reinforced epoxy gradient composites

NASA Astrophysics Data System (ADS)

Nigrawal, Archana; Sharma, Arun Kumar; Ojha, Pragya

2018-05-01

Temperature and frequency dependence of a.c. conductivity (σa.c) of milled carbon fibre (MCF) reinforced epoxy gradient composites has been studied in a wide temperature (30 to 150°C) and frequency range (1 to 10kHz). It is observed that the ac conductivity of composites increases with increase in temperature. Activation energy decreases from 0.55 eV to 0.43 eV on increase of MCF content from 0.45to 1.66 Vol%.

A Hybrid Model for Multiscale Laser Plasma Simulations with Detailed Collisional Physics

DTIC Science & Technology

2016-11-29

quantum calculations with corrections for low temperature NIST Cutoff • Starts with LANL and assumes higher excited states are ionized • Cutoff... NIST Grouping • Boltzmann or Uniform grouping • Saves 20-30% over Electron Splitting • Case by case basis 11Distribution A – Approved for public release...Temperature: 0.035 eV • Atomic Density: 1020 1/m3 • Ionization fraction: 10-13 • Electron Temperature: 10 & 100 eV • t = [0,106] seconds Groupings • NIST

Electrical characterization of 6H crystalline silicon carbide. M.S. Thesis Final Report

NASA Technical Reports Server (NTRS)

Lempner, Stephen E.

1994-01-01

Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 K to 650 K (200 K to 500 K for p-type sample). By fitting the measured temperature dependent carrier concentration data to the single activation energy theoretical model: (1) the activation energy for the nitrogen donor ranged from 0.078 eV to 0.101 eV for a doping concentration range of 10(exp 17) cm(exp -3) to 10(exp 18) cm(exp -3) and (2) the activation energy for the aluminum acceptor was 0.252 eV for a doping concentration of 4.6 x 10(exp 18) cm(exp -3). By fitting the measured temperature dependent carrier concentration data to the double activation energy level theoretical model for the nitrogen donor: (1) the activation energy for the hexagonal site was 0.056 eV and 0.093 eV corresponding to doping concentrations of 3.33 x 10 (exp 17) cm(exp -3) and 1.6 x 10(exp 18) cm(exp -3) and (2) the activation energy for the cubic site was 0.113 and 0.126 eV corresponding to doping concentrations of 4.2 x 10(exp 17) cm(exp -3) and 5.4 x 10(exp 18) cm(exp -3).