Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

NASA Astrophysics Data System (ADS)

Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

Shape memory alloys: metallurgy, biocompatibility, and biomechanics for neurosurgical applications.

PubMed

Hoh, Daniel J; Hoh, Brian L; Amar, Arun P; Wang, Michael Y

2009-05-01

SHAPE MEMORY ALLOYS possess distinct dynamic properties with particular applications in neurosurgery. Because of their unique physical characteristics, these materials are finding increasing application where resiliency, conformation, and actuation are needed. Nitinol, the most frequently manufactured shape memory alloy, responds to thermal and mechanical stimuli with remarkable mechanical properties such as shape memory effect, super-elasticity, and high damping capacity. Nitinol has found particular use in the biomedical community because of its excellent fatigue resistance and biocompatibility, with special interest in neurosurgical applications. The properties of nitinol and its diffusionless phase transformations contribute to these unique mechanical capabilities. The features of nitinol, particularly its shape memory effect, super-elasticity, damping capacity, as well as its biocompatibility and biomechanics are discussed herein. Current and future applications of nitinol and other shape memory alloys in endovascular, spinal, and minimally invasive neurosurgery are introduced. An understanding of the metallurgic properties of nitinol provides a foundation for further exploration of its use in neurosurgical implant design.

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

PubMed

Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

2013-01-01

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Memory operation mechanism of fullerene-containing polymer memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Anri, E-mail: anakajima@hiroshima-u.ac.jp; Fujii, Daiki

2015-03-09

The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to themore » width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.« less

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

NASA Astrophysics Data System (ADS)

Lee, Juwon; Pak, Sangyeon; Lee, Young-Woo; Cho, Yuljae; Hong, John; Giraud, Paul; Shin, Hyeon Suk; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seungnam; Kim, Jong Min

2017-03-01

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ~4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.

PubMed

Cheng, Shun-Wen; Han, Ting; Huang, Teng-Yung; Chang Chien, Yu-Hsin; Liu, Cheng-Liang; Tang, Ben Zhong; Liou, Guey-Sheng

2018-05-30

A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 10 4 s between these two states with an on/off ratio of 10 4 , and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, H. X.; Zhang, T.; Wang, R. X.

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfO{sub x} film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfO{sub x} matrix. Pt/Ni-NCs embedded HfO{sub x}/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 10{sup 12} electrons/cm{sup 2}, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 10{sup 4} cycles and excellent retention performance of 10{sup 5} s, fulfilling themore » requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.« less

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

NASA Astrophysics Data System (ADS)

Zhu, H. X.; Zhang, T.; Wang, R. X.; Zhang, Y. Y.; Li, L. T.; Qiu, X. Y.

2016-05-01

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

NASA Astrophysics Data System (ADS)

Kim, Seung-Tae; Cho, Won-Ju

2018-01-01

We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-deposition annealing was performed at 600-3000 W after AlO x switching layer deposition, and the MLC operation was compared with as-deposited (as-dep) and conventional thermally annealing (CTA) treated devices. All solution-processed AlO x -based ReRAM devices exhibited bipolar resistive switching (BRS) behavior. We found that these devices have four-resistance states (2 bits) of MLC operation according to the modulation of the high-resistance state (HRSs) through reset voltage control. Particularly, compared to the as-dep and CTA ReRAM devices, the MWI-treated ReRAM devices showed a significant increase in the memory window and stable endurance for multi-level operation. Moreover, as the MWI power increased, excellent MLC characteristics were exhibited because the resistance ratio between each resistance state was increased. In addition, it exhibited reliable retention characteristics without deterioration at 25 °C and 85 °C for 10 000 s. Finally, the relationship between the chemical characteristics of the solution-processed AlO x switching layer and BRS-based multi-level operation according to the annealing method and MWI power was investigated using x-ray photoelectron spectroscopy.

Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin

2016-05-01

The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00505e

First demonstration of olfactory learning and long term memory in honey bee queens.

PubMed

Gong, Zhiwen; Tan, Ken; Nieh, James C

2018-05-18

As the primary source of colony reproduction, social insect queens play a vital role. However, the cognitive abilities of queens are not well understood, although queen learning and memory are essential in multiple species such as honey bees, in which virgin queens must leave the nest and then successful learn to navigate back over repeated nuptial flights. Honey bee queen learning has never been previously demonstrated. We therefore tested olfactory learning in queens and workers and examined the role of DNA methylation, which plays a key role in long term memory formation. We provide the first evidence that honey bee queens have excellent learning and memory. The proportion of honey bee queens that exhibited learning was 5-fold higher than workers at every tested age and, for memory, 4-fold higher than workers at a very young age. DNA methylation may play a key role in this queen memory because queens exhibiting remote memory had a more consistent elevation in Dnmt3 gene expression as compared to workers. Both castes also showed excellent remote memory (7 day memory), which was reduced by 14-20% by the DNA methylation inhibitor, zebularine. Given that queens live about 10-fold longer than workers, these results suggest that queens can serve as an excellently long-term reservoir of colony memory. © 2018. Published by The Company of Biologists Ltd.

Programmable permanent data storage characteristics of nanoscale thin films of a thermally stable aromatic polyimide.

PubMed

Kim, Dong Min; Park, Samdae; Lee, Taek Joon; Hahm, Suk Gyu; Kim, Kyungtae; Kim, Jin Chul; Kwon, Wonsang; Ree, Moonhor

2009-10-06

We have synthesized a new thermally and dimensionally stable polyimide, poly(4,4'-amino(4-hydroxyphenyl)diphenylene hexafluoroisopropylidenediphthalimide) (6F-HTPA PI). 6F-HTPA PI is soluble in organic solvents and is thus easily processed with conventional solution coating techniques to produce good quality nanoscale thin films. Devices fabricated with nanoscale thin PI films with thicknesses less than 77 nm exhibit excellent unipolar write-once-read-many-times (WORM) memory behavior with a high ON/OFF current ratio of up to 10(6), a long retention time and low power consumption, less than +/-3.0 V. Furthermore, these WORM characteristics were found to persist even at high temperatures up to 150 degrees C. The WORM memory behavior was found to be governed by trap-limited space-charge limited conduction and local filament formation. The conduction processes are dominated by hole injection. Thus the hydroxytriphenylamine moieties of the PI polymer might play a key role as hole trapping sites in the observed WORM memory behavior. The properties of 6F-HTPA PI make it a promising material for high-density and very stable programmable permanent data storage devices with low power consumption.

Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO

NASA Astrophysics Data System (ADS)

Lee, Jin-Woo; Kwon, Hyeon-Min; Kim, Myeong-Ho; Lee, Seung-Ryul; Kim, Young-Bae; Choi, Duck-Kyun

2014-05-01

Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I- V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaO x was examined in a Pt/a-IGZO/TaO x /Al2O3/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaO x , an oxygen-rich TaO x interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaO x . The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 101 at a read voltage of -0.5 V, and the rectifying ratio was about 103 at ±2 V.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

PubMed

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

NASA Astrophysics Data System (ADS)

Muqeet Rehman, Muhammad; Uddin Siddiqui, Ghayas; Kim, Sowon; Choi, Kyung Hyun

2017-08-01

Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al2O3) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications.

Kagan Structures, Processing, and Excellence in College Teaching

ERIC Educational Resources Information Center

Kagan, Spencer

2014-01-01

Frequent student processing of lecture content (1) clears working memory, (2) increases long-term memory storage, (3) produces retrograde memory enhancement, (4) creates episodic memories, (5) increases alertness, and (6) activates many brain structures. These outcomes increase comprehension of and memory for content. Many professors now…

Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system

NASA Astrophysics Data System (ADS)

Sung, Changhyuck; Lim, Seokjae; Kim, Hyungjun; Kim, Taesu; Moon, Kibong; Song, Jeonghwan; Kim, Jae-Joon; Hwang, Hyunsang

2018-03-01

To improve the classification accuracy of an image data set (CIFAR-10) by using analog input voltage, synapse devices with excellent conductance linearity (CL) and multi-level cell (MLC) characteristics are required. We analyze the CL and MLC characteristics of TaOx-based filamentary resistive random access memory (RRAM) to implement the synapse device in neural network hardware. Our findings show that the number of oxygen vacancies in the filament constriction region of the RRAM directly controls the CL and MLC characteristics. By adopting a Ta electrode (instead of Ti) and the hot-forming step, we could form a dense conductive filament. As a result, a wide range of conductance levels with CL is achieved and significantly improved image classification accuracy is confirmed.

Resistive switching characteristics of thermally oxidized TiN thin films

NASA Astrophysics Data System (ADS)

Biju, K. P.

2018-04-01

Resistive switching characteristics of thermally oxidized TiN thin films and mechanisms were investigated.XPS results indicates Ti-O content decreases with sputter etching and Ti 2p peak shift towards lower binding energy due to formation of Ti-O-N and Ti-N. Pt/TiO2/TiON/TiN stack exhibits both clockwise switching (CWS) and counter clockwise switching(CCWS) characteristic depending on polarity of the applied voltage. However the transition from CCWS to CWS is irreversible. Two stable switching modes with opposite switching polarity and different electrical characteristics are found to coexist in the same memory cell. Clockwise switching shows filamentary characteristics that lead to faster switching with excellent retention at high temperature. Counter-clockwise switching exhibits homogeneous conduction with slower switching and moderate retention. The field-induced switching in both CCWS and CWS might be due to inhomogeneous defect distribution due to thermal oxidation.

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

2017-12-01

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

PubMed

Qian, Kai; Cai, Guofa; Nguyen, Viet Cuong; Chen, Tupei; Lee, Pooi See

2016-10-05

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO 3 film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 4 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

Characteristics of memory B cells elicited by a highly efficacious HPV vaccine in subjects with no pre-existing immunity.

PubMed

Scherer, Erin M; Smith, Robin A; Simonich, Cassandra A; Niyonzima, Nixon; Carter, Joseph J; Galloway, Denise A

2014-10-01

Licensed human papillomavirus (HPV) vaccines provide near complete protection against the types of HPV that most commonly cause anogenital and oropharyngeal cancers (HPV 16 and 18) when administered to individuals naive to these types. These vaccines, like most other prophylactic vaccines, appear to protect by generating antibodies. However, almost nothing is known about the immunological memory that forms following HPV vaccination, which is required for long-term immunity. Here, we have identified and isolated HPV 16-specific memory B cells from female adolescents and young women who received the quadrivalent HPV vaccine in the absence of pre-existing immunity, using fluorescently conjugated HPV 16 pseudoviruses to label antigen receptors on the surface of memory B cells. Antibodies cloned and expressed from these singly sorted HPV 16-pseudovirus labeled memory B cells were predominantly IgG (>IgA>IgM), utilized diverse variable genes, and potently neutralized HPV 16 pseudoviruses in vitro despite possessing only average levels of somatic mutation. These findings suggest that the quadrivalent HPV vaccine provides an excellent model for studying the development of B cell memory; and, in the context of what is known about memory B cells elicited by influenza vaccination/infection, HIV-1 infection, or tetanus toxoid vaccination, indicates that extensive somatic hypermutation is not required to achieve potent vaccine-specific neutralizing antibody responses.

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

NASA Astrophysics Data System (ADS)

Qian, Shi-Bing; Wang, Yong-Ping; Shao, Yan; Liu, Wen-Jun; Ding, Shi-Jin

2017-02-01

For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of 1.5 × 1012 cm-2 and a small size of 3 4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

NASA Astrophysics Data System (ADS)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.

PubMed

Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak

2015-10-07

Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers.

PubMed

Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun

2017-12-13

Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaO x /NbO x /Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaO x stack to increase the number of trap sites in the RS GaO x layer through interfacial reactions between the Ti and GaO x layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbO x /Pt stack to add rectifying behavior to the RS GaO x layer. This behavior is a result of the large Schottky barrier height between the NbO x and Pt layers. Finally, both the Ti/GaO x and NbO x /Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (-2.8 to 2.5 V), high on/off ratios (∼20), high selectivity (∼10 4 ), high operating speeds (200-500 ns), a very low forming voltage (∼3 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.

High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiang, Lanyi; Ying, Jun; Han, Jinhua

2016-04-25

In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electronsmore » transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.« less

Exterior view, westsouthwest, of Jeudevine Memorial Library. Built 18961897 and ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Exterior view, west-southwest, of Jeudevine Memorial Library. Built 1896-1897 and designed by local architect Lambert Packard, the library is an excellent example of Richardsonian Romanesque architecture. - Jeudevine Memorial Library, 93 North Main Street, Hardwick, Caledonia County, VT

Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

NASA Astrophysics Data System (ADS)

Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

2018-06-01

In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

Exploiting heat treatment effects on SMAs macro and microscopic properties in developing fire protection devices

NASA Astrophysics Data System (ADS)

Burlacu, L.; Cimpoeşu, N.; Bujoreanu, L. G.; Lohan, N. M.

2017-08-01

Ni-Ti shape memory alloys (SMAs) are intelligent alloys which demonstrate unique properties, such as shape memory effect, two-way shape memory effect, super-elasticity and vibration damping which, accompanied by good processability, excellent corrosion resistance and biocompatibility as well as fair wear resistance and cyclic stability, enabled the development of important industrial applications (such as sensors, actuators, fasteners, couplings and valves), medical applications (such as stents, bone implants, orthodontic archwires, minimal invasive surgical equipment) as well as environmental health and safety devices (anti-seismic dampers, fire safety devices). The phase transitions in Ni-Ti SMAs are strongly influenced by processing methods, chemical compositions and thermomechanical history. This paper presents a study of the effects of heat treatment on the mechanical and thermal properties of commercial Ni-Ti shape memory alloy (SMA). The experimental work involved subjecting a SMA rod to heat-treatment consisting in heating up to 500°C, 10 minutes-maintaining and water quenching. Mechanical properties were highlighted by microhardness tests while thermal characteristics were emphasized by differential scanning calorimetry (DSC). The presence of chemical composition fluctuations was checked by X-ray energy dispersive spectroscopy performed with an EDAX Bruker analyzer.

Electrically and Optically Readable Light Emitting Memories

PubMed Central

Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

2014-01-01

Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. PMID:24894723

"A Message for My Brother": The Vietnam Veterans' Memorial as Rhetorical Situation.

ERIC Educational Resources Information Center

Carlson, A. Cheree; Hocking, John E.

An examination of letters left at the Vietnam Veteran's Memorial in Washington, D.C. between November, 1984 and April, 1986 revealed that the memorial serves as a rhetorical situation that urges its visitors to eloquence. The memorial is an excellent proving ground for situational theory because the interaction of site and perception is vital to…

Compression in Working Memory and Its Relationship with Fluid Intelligence

ERIC Educational Resources Information Center

Chekaf, Mustapha; Gauvrit, Nicolas; Guida, Alessandro; Mathy, Fabien

2018-01-01

Working memory has been shown to be strongly related to fluid intelligence; however, our goal is to shed further light on the process of information compression in working memory as a determining factor of fluid intelligence. Our main hypothesis was that compression in working memory is an excellent indicator for studying the relationship between…

SONOS technology for commercial and military nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Adams, D.; Farrell, P.; Jacunski, M.; Williams, D.; Jakubczak, J.; Knoll, M.; Murray, J.

Silicon Oxide Nitride Oxide Semiconductor (SONOS) technology is well suited for military and commercial nonvolatile memory applications. Excellent long term memory retention, radiation hardness, and endurance has been demonstrated with this technology. This paper summarizes our data in these areas for SONOS technology.

Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-03-01

In this work, the transparent bipolar resistive switching characteristics of a SiCN-based ITO/SiCN/AZO structure due to In diffusion from ITO is studied. The SiCN based device is found to be 80% transparent in the visible wavelength region. This device, with AZO as both top and bottom electrodes, does not show any RRAM property due to deposition of the high quality O2-free SiCN film. Replacing the AZO top electrode with ITO in this device results in good resistive switching (RS) characteristics with a high on/off ratio and long retention. Replacing the SiCN film with ZrO2 also results in excellent RS characteristics due to the formation of an oxygen vacancies filament inside the ZrO2 film. A resistance ratio of on/off is found to be higher in the SiCN based device compared to that of the ZrO2 device. Diffusion of In from ITO into the SiCN film on application of high positive voltage during forming can be attributed to the occurrence of RS in the device, which is confirmed by the analyses of energy dispersive spectroscopy and secondary-ion mass spectrometry. This study shows a pathway for the fabrication of CBRAM based transparent devices for non-volatile memory application.

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory.

PubMed

Qian, Shi-Bing; Wang, Yong-Ping; Shao, Yan; Liu, Wen-Jun; Ding, Shi-Jin

2017-12-01

For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp 2 and NH 3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of ~1.5 × 10 12  cm -2 and a small size of 3~4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

Excellent selector performance in engineered Ag/ZrO2:Ag/Pt structure for high-density bipolar RRAM applications

NASA Astrophysics Data System (ADS)

Wang, Chao; Song, Bing; Zeng, Zhongming

2017-12-01

A high-performance selector with bidirectional threshold switching (TS) characteristics of Ag/ZrO2/Pt structure was prepared by incorporating metallic Ag into the ZrO2 matrix. The bidirectional TS device exhibited excellent switching uniformity, forming-free behavior, ultra-low off current of <1 nA and adjustable selectivity (from 102 to 107). The experiment results confirmed that metallic Ag clusters were penetrated into the ZrO2 matrix during the annealing process, which would function as an effective active source responsible for the bidirectional TS. The volatile behavior could be explained by the self-dissolution of unstable filaments caused by minimization of the interfacial energy and thermal effect. Furthermore, a bipolar-type one selector-one resistor (1S-1R) memory device was successfully fabricated and exhibited significant suppression of the undesired sneak current, indicating the great potential as selector in a cross-point array.

Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories

NASA Astrophysics Data System (ADS)

Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V. A. L.

2015-10-01

Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure. Electronic supplementary information (ESI) available: Energy-dispersive X-ray spectroscopy (EDS) spectra of the metal NPs, SEM image of MoS2 on Au NPs, erasing operations of the metal NPs-MoS2 memory device, transfer characteristics of the standard FET devices and Ag NP devices under programming operation, tapping-mode AFM height image of the fabricated MoS2 film for pristine MoS2 flash memory, gate signals used for programming the Au NPs-MoS2 and Pt NPs-MoS2 flash memories, and data levels recorded for 100 sequential cycles. See DOI: 10.1039/c5nr05054e

Numerical simulations of human tibia osteosynthesis using modular plates based on Nitinol staples.

PubMed

Tarniţă, Daniela; Tarniţă, D N; Popa, D; Grecu, D; Tarniţă, Roxana; Niculescu, D; Cismaru, F

2010-01-01

The shape memory alloys exhibit a number of remarkable properties, which open new possibilities in engineering and more specifically in biomedical engineering. The most important alloy used in biomedical applications is NiTi. This alloy combines the characteristics of the shape memory effect and superelasticity with excellent corrosion resistance, wear characteristics, mechanical properties and a good biocompatibility. These properties make it an ideal biological engineering material, especially in orthopedic surgery and orthodontics. In this work, modular plates for the osteosynthesis of the long bones fractures are presented. The proposed modular plates are realized from identical modules, completely interchangeable, made of titanium or stainless steel having as connecting elements U-shaped staples made of Nitinol. Using computed tomography (CT) images to provide three-dimensional geometric details and SolidWorks software package, the three dimensional virtual models of the tibia bone and of the modular plates are obtained. The finite element models of the tibia bone and of the modular plate are generated. For numerical simulation, VisualNastran software is used. Finally, displacements diagram, von Misses strain diagram, for the modular plate and for the fractured tibia and modular plate ensemble are obtained.

Characteristics of Near-Death Experiences Memories as Compared to Real and Imagined Events Memories

PubMed Central

Brédart, Serge; Dehon, Hedwige; Ledoux, Didier; Laureys, Steven; Vanhaudenhuyse, Audrey

2013-01-01

Since the dawn of time, Near-Death Experiences (NDEs) have intrigued and, nowadays, are still not fully explained. Since reports of NDEs are proposed to be imagined events, and since memories of imagined events have, on average, fewer phenomenological characteristics than real events memories, we here compared phenomenological characteristics of NDEs reports with memories of imagined and real events. We included three groups of coma survivors (8 patients with NDE as defined by the Greyson NDE scale, 6 patients without NDE but with memories of their coma, 7 patients without memories of their coma) and a group of 18 age-matched healthy volunteers. Five types of memories were assessed using Memory Characteristics Questionnaire (MCQ – Johnson et al., 1988): target memories (NDE for NDE memory group, coma memory for coma memory group, and first childhood memory for no memory and control groups), old and recent real event memories and old and recent imagined event memories. Since NDEs are known to have high emotional content, participants were requested to choose the most emotionally salient memories for both real and imagined recent and old event memories. Results showed that, in NDE memories group, NDE memories have more characteristics than memories of imagined and real events (p<0.02). NDE memories contain more self-referential and emotional information and have better clarity than memories of coma (all ps<0.02). The present study showed that NDE memories contained more characteristics than real event memories and coma memories. Thus, this suggests that they cannot be considered as imagined event memories. On the contrary, their physiological origins could lead them to be really perceived although not lived in the reality. Further work is needed to better understand this phenomenon. PMID:23544039

Predictors of pain control in patients undergoing flexible bronchoscopy.

PubMed

Lechtzin, N; Rubin, H R; Jenckes, M; White, P; Zhou, L M; Thompson, D A; Diette, G B

2000-08-01

The purpose of this study was to assess the extent to which patients undergoing flexible bronchoscopy (FOB) experience pain and to identify patient factors and process of care factors that are associated with pain. We conducted a prospective cohort study on 481 patients undergoing FOB. Overall control of pain during FOB was the primary outcome. The mean age of the patients was 48 yr, 50% were male, and 32% required supplemental oxygen prior to FOB. Pain control was excellent in 36% of patients, but 10% considered it to be fair or poor. Patient factors associated with excellent pain control were excellent health (versus poor health, OR = 6.25 [95% CI, 2.28-16.67]), more education (college education versus high school education, OR = 1.72 [95% CI, 1.05-2.86]), and not having asthma (OR = 2.86 [95% CI, 1.09-7.14]). Process of care factors associated with excellent pain control were not being bothered by scope insertion (versus bothered, OR = 3.65 [95% CI, 1.99-6.98]), no memory of FOB (versus some memory, OR = 2.33 [95% CI, 1.24-4.44]), and higher ratings of information about the procedure (per 1-point increase on a 12-point scale, OR = 1.57 [95% CI, 1.41-1.78]). This is the first large-scale, prospective study to evaluate patient and process of care factors that influence pain control during FOB. It demonstrated that there are patient characteristics and process of care factors that need to be considered when evaluating pain during bronchoscopy. Improved preparation of patients with lower education, inferior health status, and asthma may lead to decreased pain during FOB. Bronchoscopists may be able to reduce pain during FOB by identifying methods to decrease pain on scope insertion, by improving the information provided to patients, and by achieving greater levels of amnesia during FOB.

GABA[subscript A] Receptors Determine the Temporal Dynamics of Memory Retention

ERIC Educational Resources Information Center

McNally, Gavan P.; Augustyn, Katarzyna A.; Richardson, Rick

2008-01-01

Four experiments studied the role of GABA[subscript A] receptors in the temporal dynamics of memory retention. Memory for an active avoidance response was a nonmonotonic function of the retention interval. When rats were tested shortly (2 min) or some time (24 h) after training, retention was excellent, but when they were tested at intermediate…

Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles

NASA Astrophysics Data System (ADS)

Hao, Aize; Ismail, Muhammad; He, Shuai; Huang, Wenhua; Qin, Ni; Bao, Dinghua

2018-02-01

The coexistence of unipolar and bipolar resistive switching (RS) behaviors of Ag-nanoparticles (Ag-NPs) doped NiFe2O4 (NFO) based memory devices was investigated. The switching voltages of required operations in the unipolar mode were smaller than those in the bipolar mode, while ON/OFF resistance levels of both modes were identical. Ag-NPs doped NFO based devices could switch between the unipolar and bipolar modes just by preferring the polarity of RESET voltage. Besides, the necessity of identical compliance current during the SET process of unipolar and bipolar modes provided an additional advantage of simplicity in device operation. Performance characteristics and cycle-to-cycle uniformity (>103 cycles) in unipolar operation were considerably better than those in bipolar mode (>102 cycles) at 25 °C. Moreover, good endurance (>600 cycles) at 200 °C was observed in unipolar mode and excellent nondestructive retention characteristics were obtained on memory cells at 125 °C and 200 °C. On the basis of temperature dependence of resistance at low resistance state, it was believed that physical origin of the RS mechanism involved the formation/rupture of the conducting paths consisting of oxygen vacancies and Ag atoms, considering Joule heating and electrochemical redox reaction effects for the unipolar and bipolar resistive switching behaviors. Our results demonstrate that 0.5% Ag-NPs doped nickel ferrites are promising resistive switching materials for resistive access memory applications.

Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications

NASA Astrophysics Data System (ADS)

Wang, Chao; Song, Bing; Li, Qingjiang; Zeng, Zhongming

2018-03-01

We herein present a novel unidirectional threshold selector for cross-point bipolar RRAM array. The proposed Ag/amorphous Si based threshold selector showed excellent threshold characteristics in positive field, such as high selectivity ( 105), steep slope (< 5 mV/decade) and low off-state current (< 300 pA). Meanwhile, the selector exhibited rectifying characteristics in the high resistance state as well and the rectification ratio was as high as 103 at ± 1.5 V. Nevertheless, due to the high reverse current about 9 mA at - 3 V, this unidirectional threshold selector can be used as a selection element for bipolar-type RRAM. By integrating a bipolar RRAM device with the selector, experiments showed that the undesired sneak was significantly suppressed, indicating its potentiality for high-density integrated nonvolatile memory applications.

Learning and memory in zebrafish (Danio rerio).

PubMed

Gerlai, R

2016-01-01

Learning and memory are defining features of our own species inherently important to our daily lives and to who we are. Without our memories we cease to exist as a person. Without our ability to learn individuals and collectively our society would cease to function. Diseases of the mind still remain incurable. The interest in understanding of the mechanisms of learning and memory is thus well founded. Given the complexity of such mechanisms, concerted efforts have been made to study them under controlled laboratory conditions, ie, with laboratory model organisms. The zebrafish, although new in this field, is one such model organism. The rapidly developing forward- and reverse genetic methods designed for the zebrafish and the increasing use of pharmacological tools along with numerous neurobiology techniques make this species perhaps the best model for the analysis of the mechanisms of complex central nervous system characteristics. The fact that it is an evolutionarily ancient and simpler vertebrate, but at the same time it possesses numerous conserved features across multiple levels of biological organization makes this species an excellent tool for the analysis of the mechanisms of learning and memory. The bottleneck lies in our understanding of its cognitive and mnemonic features, the topic of this chapter. The current paper builds on a chapter published in the previous edition and continues to focus on associative learning, but now it extends the discussion to other forms of learning and to recent discoveries on memory-related features and findings obtained both in adults and larval zebrafish. Copyright © 2016 Elsevier Inc. All rights reserved.

Effect of Thermal Treatments on Ni-Mn-Ga and Ni-Rich Ni-Ti-Hf/Zr High-Temperature Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Santamarta, Ruben; Evirgen, Alper; Perez-Sierra, Aquilina M.; Pons, Jaume; Cesari, Eduard; Karaman, Ibrahim; Noebe, Ron D.

2015-11-01

Among all the promising high-temperature shape memory alloys (HTSMAs), the Ni-Mn-Ga and the Ni-Ti-Hf/Zr systems exhibit interesting shape memory and superelastic properties that may place them in a good position for potential applications. The present work shows that thermal treatments play a crucial role in controlling the martensitic phase transformation characteristics of both systems, but in different ways. On one hand, the equilibrium phase diagram of the Ni-Mn-Ga family allows selecting compositions with high transformation temperatures and outstanding thermal stability at relatively high temperatures in air, showing no significant changes in the transformation behavior for continuous aging up to ˜5 years at 500 °C. Moreover, the excellent thermal stability correlates with a good thermal cyclic stability and an exceptional oxidation resistance of the parent phase. On the other hand, precipitation processes controlled by thermal treatments are needed to manipulate the transformation temperatures, mechanical properties, and thermal stability of Ni-rich Ni-Ti-Hf/Zr alloys to become HTSMAs. These changes in the functional properties are a consequence of the competition between the mechanical and compositional effects of the precipitates on the martensitic transformation.

Improving of Mechanical and Shape-Memory Properties in Hyperbranched Epoxy Shape-Memory Polymers

NASA Astrophysics Data System (ADS)

Santiago, David; Fabregat-Sanjuan, Albert; Ferrando, Francesc; De la Flor, Silvia

2016-09-01

A series of shape-memory epoxy polymers were synthesized using an aliphatic amine and two different commercial hyperbranched poly(ethyleneimine)s with different molecular weights as crosslinking agents. Thermal, mechanical, and shape-memory properties in materials modified with different hyperbranched polymers were analyzed and compared in order to establish the effect of the structure and the molecular weight of the hyperbranched polymers used. The presence of hyperbranched polymers led to more heterogeneous networks, and the crosslinking densities of which increase as the hyperbranched polymer content increases. The transition temperatures can be tailored from 56 to 117 °C depending on the molecular weight and content of the hyperbranched polymer. The mechanical properties showed excellent values in all formulations at room temperature and, specially, at T_{{g}}^{{E^' with stress at break as high as 15 MPa and strain at break as high as 60 %. The shape-memory performances revealed recovery ratios around 95 %, fixity ratios around 97 %, and shape-recovery velocities as high as 22 %/min. The results obtained in this study reveal that hyperbranched polymers with different molecular weights can be used to enhance the thermal and mechanical properties of epoxy-based SMPs while keeping excellent shape-memory properties.

Elastic poly(ε-caprolactone)-polydimethylsiloxane copolymer fibers with shape memory effect for bone tissue engineering.

PubMed

Kai, Dan; Prabhakaran, Molamma P; Chan, Benjamin Qi Yu; Liow, Sing Shy; Ramakrishna, Seeram; Xu, Fujian; Loh, Xian Jun

2016-02-02

A porous shape memory scaffold with biomimetic architecture is highly promising for bone tissue engineering applications. In this study, a series of new shape memory polyurethanes consisting of organic poly(ε-caprolactone) (PCL) segments and inorganic polydimethylsiloxane (PDMS) segments in different ratios (9 : 1, 8 : 2 and 7 : 3) was synthesised. These PCL-PDMS copolymers were further engineered into porous fibrous scaffolds by electrospinning. With different ratios of PCL: PDMS, the fibers showed various fiber diameters, thermal behaviour and mechanical properties. Even after being processed into fibrous structures, these PCL-PDMS copolymers maintained their shape memory properties, and all the fibers exhibited excellent shape recovery ratios of  >90% and shape fixity ratios of  >92% after 7 thermo-mechanical cycles. Biological assay results corroborated that the fibrous PCL-PDMS scaffolds were biocompatible by promoting osteoblast proliferation, functionally enhanced biomineralization-relevant alkaline phosphatase expression and mineral deposition. Our study demonstrated that the PCL-PDMS fibers with excellent shape memory properties are promising substrates as bioengineered grafts for bone regeneration.

Do mental skills make champions? Examining the discriminant function of the psychological characteristics of developing excellence questionnaire.

PubMed

Macnamara, Aine; Collins, Dave

2013-01-01

The ability to successfully develop to the highest levels in sport is dependent on a range of variables, not least an individual's ability to cope with the various challenges of development. Psychological Characteristics of Developing Excellence (PCDEs) include both the trait characteristics and the state-deployed skills that have been shown to play a crucial role in the realisation of potential. Psychological characteristics of developing excellence equip aspiring elites with the mental skills, attitudes, and emotions to cope with the challenges of the development pathway, as well as underpinning their capacity to make the most of their innate abilities. The Psychological Characteristics of Developing Excellence Questionnaire (PCDEQ) was designed to assess the possession and deployment of these characteristics. The purpose of this paper was to examine the ability of the Psychological Characteristics of Developing Excellence Questionnaire to effectively discriminate between good and poor developers based on their current possession and deployment of psychological characteristics of developing excellence. Two hundred and eighty-five athletes (n = 192 team athletes; n = 93 individual athletes) completed the Psychological Characteristics of Developing Excellence Questionnaire. Results from the discriminant function analysis suggest that the Psychological Characteristics of Developing Excellence Questionnaire correctly classifies between 67% and 75% of athletes based on their responses. The Psychological Characteristics of Developing Excellence Questionnaire can be used as a formative assessment tool to direct training programmes by identifying weaknesses in psychological characteristics of developing excellence and incorporating specific training to address these weaknesses in advance of developmental challenges.

Robust Vacuum-/Air-Dried Graphene Aerogels and Fast Recoverable Shape-Memory Hybrid Foams.

PubMed

Li, Chenwei; Qiu, Ling; Zhang, Baoqing; Li, Dan; Liu, Chen-Yang

2016-02-17

New graphene aerogels can be fabricated by vacuum/air drying, and because of the mechanical robustness of the graphene aerogels, shape-memory polymer/graphene hybrid foams can be fabricated by a simple infiltration-air-drying-crosslinking method. Due to the superelasticity, high strength, and good electrical conductivity of the as-prepared graphene aerogels, the shape-memory hybrid foams exhibit excellent thermotropical and electrical shape-memory properties, outperforming previously reported shape-memory polymer foams. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An annulus fibrosus closure device based on a biodegradable shape-memory polymer network.

PubMed

Sharifi, Shahriar; van Kooten, Theo G; Kranenburg, Hendrik-Jan C; Meij, Björn P; Behl, Marc; Lendlein, Andreas; Grijpma, Dirk W

2013-11-01

Injuries to the intervertebral disc caused by degeneration or trauma often lead to tearing of the annulus fibrosus (AF) and extrusion of the nucleus pulposus (NP). This can compress nerves and cause lower back pain. In this study, the characteristics of poly(D,L-lactide-co-trimethylene carbonate) networks with shape-memory properties have been evaluated in order to prepare biodegradable AF closure devices that can be implanted minimally invasively. Four different macromers with (D,L-lactide) to trimethylene carbonate (DLLA:TMC) molar ratios of 80:20, 70:30, 60:40 and 40:60 with terminal methacrylate groups and molecular weights of approximately 30 kg mol(-1) were used to prepare the networks by photo-crosslinking. The mechanical properties of the samples and their shape-memory properties were determined at temperatures of 0 °C and 40 °C by tensile tests- and cyclic, thermo-mechanical measurements. At 40 °C all networks showed rubber-like behavior and were flexible with elastic modulus values of 1.7-2.5 MPa, which is in the range of the modulus values of human annulus fibrosus tissue. The shape-memory characteristics of the networks were excellent with values of the shape-fixity and the shape-recovery ratio higher than 98 and 95%, respectively. The switching temperatures were between 10 and 39 °C. In vitro culture and qualitative immunocytochemistry of human annulus fibrosus cells on shape-memory films with DLLA:TMC molar ratios of 60:40 showed very good ability of the networks to support the adhesion and growth of human AF cells. When the polymer network films were coated by adsorption of fibronectin, cell attachment, cell spreading, and extracellular matrix production was further improved. Annulus fibrosus closure devices were prepared from these AF cell-compatible materials by photo-polymerizing the reactive precursors in a mold. Insertion of the multifunctional implant in the disc of a cadaveric canine spine showed that these shape-memory devices could be implanted through a small slit and to some extent deploy self-sufficiently within the disc cavity. © 2013 Elsevier Ltd. All rights reserved.

Short Forms of the Wechsler Memory Scale--Revised: Cross- Validation and Derivation of a Two-Subtest Form.

ERIC Educational Resources Information Center

van den Broek, Anneke; Golden, Charles J.; Loonstra, Ann; Ghinglia, Katheryne; Goldstein, Diane

1998-01-01

Indicated excellent cross-validations with correlation of 0.99 for past formulas (J. L. Woodard and B. N. Axelrod, 1995; B. N. Axelrod et al, 1996) for estimating the Wechsler Memory Scale- Revised General Memory and Delayed Recall Indexes. Over 85% of the estimated scores were within 10 points of actual scores. Age, education, diagnosis, and IQ…

A water-responsive shape memory ionomer with permanent shape reconfiguration ability

NASA Astrophysics Data System (ADS)

Bai, Yongkang; Zhang, Jiwen; Tian, Ran; Chen, Xin

2018-04-01

In this work, a water-responsive shape memory ionomer with high toughness was fabricated by cross-linking hyaluronic acid sodium (HAS) and polyvinyl alcohol (PVA) through coordination interactions. The strong Fe3+-carboxyl (from HAS) coordination interactions served as main physical cross-linking points for the performance of water-responsive shape memory, which associated with the flexibility of PVA chain producing excellent mechanical properties of this ionomer. The optimized ionomer was not only able to recover to its original shape within just 22 s by exposing to water, but exhibited high tensile strength up to 35.4 MPa and 4 times higher tractility than the ionomer without PVA. Moreover, the ionomers can be repeatedly programed to various new permanent shapes on demand due to the reversible physical interactions, which still performed complete and fast geometric recovery under stimuli even after 4 cycles of reprograming with 3 different shapes. The excellent shape memory and strong mechanical behaviors make our ionomers significant and promising smart materials for variety of applications.

77 FR 75143 - Submission for OMB Review; Comment Request

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-19

... information collection. The 1990 reauthorization of the Coastal Zone Management Act (CZMA) authorized an awards program to ``implement a program to promote excellence in coastal zone management by identifying..., the Walter B. Jones Memorial Awards recognize three categories of excellence: Coastal Steward of the...

Transferable and flexible label-like macromolecular memory on arbitrary substrates with high performance and a facile methodology.

PubMed

Lai, Ying-Chih; Hsu, Fang-Chi; Chen, Jian-Yu; He, Jr-Hau; Chang, Ting-Chang; Hsieh, Ya-Ping; Lin, Tai-Yuan; Yang, Ying-Jay; Chen, Yang-Fang

2013-05-21

A newly designed transferable and flexible label-like organic memory based on a graphene electrode behaves like a sticker, and can be readily placed on desired substrates or devices for diversified purposes. The memory label reveals excellent performance despite its physical presentation. This may greatly extend the memory applications in various advanced electronics and provide a simple scheme to integrate with other electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In vitro investigation of NiTiW shape memory alloy as potential biomaterial with enhanced radiopacity.

PubMed

Li, Huafang; Cong, Ying; Zheng, Yufeng; Cui, Lishan

2016-03-01

In the present study, a novel kind of NiTiW shape memory alloy with chemical composition of Ni43.5Ti45.5W11 (at.%) has been successfully developed with excellent X-ray radiopacity by the introduction of pure W precipitates into the NiTi matrix phase. Its microstructure, X-ray radiopacity, mechanical properties, corrosion resistance in simulated body fluid, hemocompatibility and in vitro cytocompatibility were systematically investigated. The typical microstructural feature of NiTiW alloy at room temperature was tiny pure W particles randomly distributing in the NiTi matrix phase. The presence of W precipitates was found to result in enhanced radiopacity and microhardness of NiTiW alloy in comparison to that of NiTi binary alloy. NiTiW alloy exhibits excellent shape memory effect, and a maximum shape recovery ratio of about 30% was obtained with a total prestrain of 8% for the NiTiW alloy sample. In the electrochemical test, NiTiW alloy presented an excellent corrosion resistance in simulated body fluid, comparable to that of NiTi alloy. Hemocompatibility tests indicated that the NiTiW alloy has quite low hemolysis (lower than 0.5%) and the adherent platelet showed round shape without pseudopod. Besides, in vitro cell viability tests demonstrated that the cell viability is all above 90%, and the cells spread well on the NiTiW alloy, having polygon or spindle healthy morphology. The hemocompatibility tests, in vitro cell viability tests and morphology observation indicated that the NiTiW shape memory alloys have excellent biocompatibility. The excellent X-ray radiopacity makes the NiTiW alloys show obvious advantages in orthopedic, stomatological, neurological and cardiovascular domains where radiopacity is quite important factor in order to guarantee successful implantation. Copyright © 2015 Elsevier B.V. All rights reserved.

Characteristics of positive autobiographical memories in adulthood.

PubMed

Bluck, Susan; Alea, Nicole

2009-01-01

The characteristics of positive autobiographical memory narratives were examined in younger and older adults. Narratives were content-coded for the extent to which they contained indicators of affect, sensory imagery, and cognition. Affect was additionally assessed through self-report. Young adults expressed more positive affect and less sensory imagery in their memory narratives than did older adults. Age differences in cognitive characteristics also appeared: younger adults showed greater causation-insight, and greater tentativeness in retelling their autobiographical memories. Controlling for episodic memory ability eliminated age differences in positive affect but did not affect age differences on other memory characteristics. Results are discussed in terms of the role that positive autobiographical memories play in daily emotional life across adulthood.

Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

NASA Astrophysics Data System (ADS)

Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

2018-06-01

The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

Design and development of novel antibacterial Ti-Ni-Cu shape memory alloys for biomedical application.

PubMed

Li, H F; Qiu, K J; Zhou, F Y; Li, L; Zheng, Y F

2016-11-29

In the case of medical implants, foreign materials are preferential sites for bacterial adhesion and microbial contamination, which can lead to the development of prosthetic infections. Commercially biomedical TiNi shape memory alloys are the most commonly used materials for permanent implants in contact with bone and dental, and the prevention of infections of TiNi biomedical shape memory alloys in clinical cases is therefore a crucial challenge for orthopaedic and dental surgeons. In the present study, copper has been chosen as the alloying element for design and development novel ternary biomedical Ti‒Ni‒Cu shape memory alloys with antibacterial properties. The effects of copper alloying element on the microstructure, mechanical properties, corrosion behaviors, cytocompatibility and antibacterial properties of biomedical Ti‒Ni‒Cu shape memory alloys have been systematically investigated. The results demonstrated that Ti‒Ni‒Cu alloys have good mechanical properties, and remain the excellent shape memory effects after adding copper alloying element. The corrosion behaviors of Ti‒Ni‒Cu alloys are better than the commercial biomedical Ti‒50.8Ni alloys. The Ti‒Ni‒Cu alloys exhibit excellent antibacterial properties while maintaining the good cytocompatibility, which would further guarantee the potential application of Ti‒Ni‒Cu alloys as future biomedical implants and devices without inducing bacterial infections.

Design and development of novel antibacterial Ti-Ni-Cu shape memory alloys for biomedical application

NASA Astrophysics Data System (ADS)

Li, H. F.; Qiu, K. J.; Zhou, F. Y.; Li, L.; Zheng, Y. F.

2016-11-01

In the case of medical implants, foreign materials are preferential sites for bacterial adhesion and microbial contamination, which can lead to the development of prosthetic infections. Commercially biomedical TiNi shape memory alloys are the most commonly used materials for permanent implants in contact with bone and dental, and the prevention of infections of TiNi biomedical shape memory alloys in clinical cases is therefore a crucial challenge for orthopaedic and dental surgeons. In the present study, copper has been chosen as the alloying element for design and development novel ternary biomedical Ti‒Ni‒Cu shape memory alloys with antibacterial properties. The effects of copper alloying element on the microstructure, mechanical properties, corrosion behaviors, cytocompatibility and antibacterial properties of biomedical Ti‒Ni‒Cu shape memory alloys have been systematically investigated. The results demonstrated that Ti‒Ni‒Cu alloys have good mechanical properties, and remain the excellent shape memory effects after adding copper alloying element. The corrosion behaviors of Ti‒Ni‒Cu alloys are better than the commercial biomedical Ti‒50.8Ni alloys. The Ti‒Ni‒Cu alloys exhibit excellent antibacterial properties while maintaining the good cytocompatibility, which would further guarantee the potential application of Ti‒Ni‒Cu alloys as future biomedical implants and devices without inducing bacterial infections.

Biphasic Synergistic Gel Materials with Switchable Mechanics and Self-Healing Capacity.

PubMed

Zhao, Ziguang; Liu, Yuxia; Zhang, Kangjun; Zhuo, Shuyun; Fang, Ruochen; Zhang, Jianqi; Jiang, Lei; Liu, Mingjie

2017-10-16

A fabrication strategy for biphasic gels is reported, which incorporates high-internal-phase emulsions. Closely packed micro-inclusions within the elastic hydrogel matrix greatly improve the mechanical properties of the materials. The materials exhibit excellent switchable mechanics and shape-memory performance because of the switchable micro- inclusions that are incorporated into the hydrogel matrix. The produced materials demonstrated a self-healing capacity that originates from the noncovalent effect of the biphasic heteronetwork. The aforementioned characteristics suggest that the biphasic gels may serve as ideal composite gel materials with validity in a variety of applications, such as soft actuators, flexible devices, and biological materials. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

THE LINDA CRANE MEMORIAL LECTURE: Striving for Excellence

PubMed Central

Hayes, Sherrill H

2010-01-01

Historically, invited lecturers have often challenged us to define excel lence in physical therapy practice, or in our academic programs. While some have addressed different char acteristics of excellence, our profession has not really come together to address 2 very important questions: what does “quality” mean in physical therapist education? And how do we measure it? Using 3 elements of Friendship, Leadership, and Mentoring, and Defining Excellence and juxtaposing these with Linda Crane and her life, a vision of excellence in physical therapy educational programs was explored in this invited lecture. The text of that lecture ensues. PMID:20520760

Vantage perspective during encoding: The effects on phenomenological memory characteristics.

PubMed

Mooren, Nora; Krans, Julie; Näring, Gérard W B; Moulds, Michelle L; van Minnen, Agnes

2016-05-01

The vantage perspective from which a memory is retrieved influences the memory's emotional impact, intrusiveness, and phenomenological characteristics. This study tested whether similar effects are observed when participants were instructed to imagine the events from a specific perspective. Fifty student participants listened to a verbal report of car-accidents and visualized the scenery from either a field or observer perspective. There were no between-condition differences in emotionality of memories and the number of intrusions, but imagery experienced from a relative observer perspective was rated as less self-relevant. In contrast to earlier studies on memory retrieval, vantage perspective influenced phenomenological memory characteristics of the memory representation such as sensory details, and ratings of vividness and distancing of the memory. However, vantage perspective is most likely not a stable phenomenological characteristic itself. Implications and suggestions for future research are discussed. Copyright © 2016 Elsevier Inc. All rights reserved.

Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory

NASA Astrophysics Data System (ADS)

Wu, Min-Lin; Wu, Yung-Hsien; Lin, Chia-Chun; Chen, Lun-Lun

2012-10-01

The structure of SiGe nanocrystals embedded in Al2O3 formed by sequential deposition of Al2O3/Si/Ge/Al2O3 and a subsequent annealing was confirmed by transmission electron microscopy and energy dispersive spectroscopy (EDS), and its application for write-once-read-many-times (WORM) memory devices was explored in this study. By applying a -10 V pulse for 1 s, a large amount of holes injected from Si substrate are stored in the nanocrystals and consequently, the current at +1.5 V increases by a factor of 104 as compared to that of the initial state. Even with a smaller -5 V pulse for 1 μs, a sufficiently large current ratio of 36 can still be obtained, verifying the low power operation. Since holes are stored in nanocrystals which are isolated from Si substrate by Al2O3 with good integrity and correspond to a large valence band offset with respect to Al2O3, desirable read endurance up to 105 cycles and excellent retention over 100 yr are achieved. Combining these promising characteristics, WORM memory devices are appropriate for high-performance archival storage applications.

The Birth Memories and Recall Questionnaire (BirthMARQ): development and evaluation

PubMed Central

2014-01-01

Background Childbirth is a challenging and emotive experience that is accompanied by strong positive and/or negative emotions. Memories of birth may be associated with how women cognitively process birth events postpartum and potentially their adaptation to parenthood. Characteristics of memories for birth may also be associated with postnatal psychological wellbeing. This paper reports the development and evaluation of a questionnaire to measure characteristics of memories of childbirth and to examine the relationship between memories for birth and mental health. Methods The Birth Memories and Recall Questionnaire (BirthMARQ) was developed by generating items from literature reviews and general measures of memory characteristics to cover dimensions relevant to childbirth. Fifty nine items were administered to 523 women in the first year after childbirth (M = 23.7 weeks) as part of an online study of childbirth. Validity of the final scale was checked by examining differences between women with and without probable depression and PTSD. Results Principal components analysis identified 23 items representing six aspects of memory accounting for 64% of the variance. These were: Emotional memory, Centrality of memory to identity, Coherence, Reliving, Involuntary recall, and Sensory memory. Reliability was good (M alpha = .80). Women with probable depression or PTSD reported more emotional memory, centrality of memories and involuntary recall. Women with probable depression also reported more reliving, and those with probable PTSD reported less coherence and sensory memory. Conclusion The results suggest the BirthMARQ is a coherent and valid measure of the characteristics of memory for childbirth which may be important in postnatal mood and psychopathology. While further testing of its reliability and validity is needed, it is a measure capable of becoming a valuable tool for examining memory characteristics in the important context of childbirth. PMID:24950589

The Birth Memories and Recall Questionnaire (BirthMARQ): development and evaluation.

PubMed

Foley, Suzanne; Crawley, Rosalind; Wilkie, Stephanie; Ayers, Susan

2014-06-20

Childbirth is a challenging and emotive experience that is accompanied by strong positive and/or negative emotions. Memories of birth may be associated with how women cognitively process birth events postpartum and potentially their adaptation to parenthood. Characteristics of memories for birth may also be associated with postnatal psychological wellbeing. This paper reports the development and evaluation of a questionnaire to measure characteristics of memories of childbirth and to examine the relationship between memories for birth and mental health. The Birth Memories and Recall Questionnaire (BirthMARQ) was developed by generating items from literature reviews and general measures of memory characteristics to cover dimensions relevant to childbirth. Fifty nine items were administered to 523 women in the first year after childbirth (M = 23.7 weeks) as part of an online study of childbirth. Validity of the final scale was checked by examining differences between women with and without probable depression and PTSD. Principal components analysis identified 23 items representing six aspects of memory accounting for 64% of the variance. These were: Emotional memory, Centrality of memory to identity, Coherence, Reliving, Involuntary recall, and Sensory memory. Reliability was good (M alpha = .80). Women with probable depression or PTSD reported more emotional memory, centrality of memories and involuntary recall. Women with probable depression also reported more reliving, and those with probable PTSD reported less coherence and sensory memory. The results suggest the BirthMARQ is a coherent and valid measure of the characteristics of memory for childbirth which may be important in postnatal mood and psychopathology. While further testing of its reliability and validity is needed, it is a measure capable of becoming a valuable tool for examining memory characteristics in the important context of childbirth.

Tier identification (TID) for tiered memory characteristics

DOEpatents

Chang, Jichuan; Lim, Kevin T; Ranganathan, Parthasarathy

2014-03-25

A tier identification (TID) is to indicate a characteristic of a memory region associated with a virtual address in a tiered memory system. A thread may be serviced according to a first path based on the TID indicating a first characteristic. The thread may be serviced according to a second path based on the TID indicating a second characteristic.

Intensity and memory characteristics of near-death experiences.

PubMed

Martial, Charlotte; Charland-Verville, Vanessa; Cassol, Héléna; Didone, Vincent; Van Der Linden, Martial; Laureys, Steven

2017-11-01

Memories of Near-Death Experiences (NDEs) seem to be very detailed and stable over time. At present, there is still no satisfactory explanation for the NDEs' rich phenomenology. Here we compared phenomenological characteristics of NDE memories with the reported experience's intensity. We included 152 individuals with a self-reported "classical" NDE (i.e. occurring in life-threatening conditions). All participants completed a mailed questionnaire that included a measure of phenomenological characteristics of memories (the Memory Characteristics Questionnaire; MCQ) and a measure of NDE's intensity (the Greyson NDE scale). Greyson NDE scale total score was positively correlated with MCQ total score, suggesting that participants who described more intense NDEs also reported more phenomenological memory characteristics of NDE. Using MCQ items, our study also showed that NDE's intensity is associated in particular with sensory details, personal importance and reactivation frequency variables. Copyright © 2017 Elsevier Inc. All rights reserved.

Surface characteristics, mechanical properties, and cytocompatibility of oxygen plasma-implanted porous nickel titanium shape memory alloy.

PubMed

Wu, S L; Chu, Paul K; Liu, X M; Chung, C Y; Ho, J P Y; Chu, C L; Tjong, S C; Yeung, K W K; Lu, W W; Cheung, K M C; Luk, K D K

2006-10-01

Good surface properties and biocompatibility are crucial to porous NiTi shape memory alloys (SMA) used in medical implants, as possible nickel release from porous NiTi may cause deleterious effects in the human body. In this work, oxygen plasma immersion ion implantation (O-PIII) was used to reduce the amount of nickel leached from porous NiTi alloys with a porosity of 42% prepared by capsule-free hot isostatic pressing. The mechanical properties, surface properties, and biocompatibility were studied by compression tests, X-ray photoelectron spectroscopy (XPS), and cell culturing. The O-PIII porous NiTi SMAs have good mechanical properties and excellent superelasticity, and the amount of nickel leached from the O-PIII porous NiTi is much less than that from the untreated samples. XPS results indicate that a nickel-depleted surface layer predominantly composed of TiO(2) is produced by O-PIII and acts as a barrier against out-diffusion of nickel. The cell culturing tests reveal that both the O-PIII and untreated porous NiTi alloys have good biocompatibility. (c) 2006 Wiley Periodicals, Inc

Choroid plexus implants rescue Alzheimer's disease-like pathologies by modulating amyloid-β degradation.

PubMed

Bolos, Marta; Antequera, Desireé; Aldudo, Jesús; Kristen, Henrike; Bullido, María Jesús; Carro, Eva

2014-08-01

The choroid plexuses (CP) release numerous biologically active enzymes and neurotrophic factors, and contain a subpopulation of neural progenitor cells providing the capacity to proliferate and differentiate into other types of cells. These characteristics make CP epithelial cells (CPECs) excellent candidates for cell therapy aiming at restoring brain tissue in neurodegenerative illnesses, including Alzheimer's disease (AD). In the present study, using in vitro approaches, we demonstrated that CP were able to diminish amyloid-β (Aβ) levels in cell cultures, reducing Aβ-induced neurotoxicity. For in vivo studies, CPECs were transplanted into the brain of the APP/PS1 murine model of AD that exhibits advanced Aβ accumulation and memory impairment. Brain examination after cell implantation revealed a significant reduction in brain Aβ deposits, hyperphosphorylation of tau, and astrocytic reactivity. Remarkably, the transplantation of CPECs was accompanied by a total behavioral recovery in APP/PS1 mice, improving spatial and non-spatial memory. These findings reinforce the neuroprotective potential of CPECs and the use of cell therapies as useful tools in AD.

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

NASA Astrophysics Data System (ADS)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2- x thin films deposited at room temperature

NASA Astrophysics Data System (ADS)

Ismail, Muhammad; Ullah, Rehmat; Hussain, Riaz; Talib, Ijaz; Rana, Anwar Manzoor; Hussain, Muhammad; Mahmood, Khalid; Hussain, Fayyaz; Ahmed, Ejaz; Bao, Dinghua

2018-02-01

Cerium oxide (CeO2-x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2-x-based memory is highly dependent on the oxygen content. Results indicate that CeO2-x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2-x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

Trauma memory characteristics and the development of acute stress disorder and post-traumatic stress disorder in youth.

PubMed

McKinnon, A; Brewer, N; Meiser-Stedman, R; Nixon, R D V

2017-03-01

The present study addresses gaps in knowledge regarding the association between trauma memory processes and posttraumatic stress responses in youth. Our primary goal was to explore the relative contribution of perceptions of trauma memory quality versus narrative trauma memory characteristics to explain overall adjustment. Children (N = 67) were interviewed within four weeks (T1) of an injury leading to hospital treatment and then again eight weeks later (T2). In each interview, the child told a trauma narrative (which were later coded), and answered the Trauma Memory Quality Questionnaire (Meiser-Stedman, Smith, Yule, & Dalgleish, 2007a), a self-report measure indexing the sensory, fragmented, and disorganised characteristics of trauma memory. They then completed measures of Acute Stress Disorder (ASD) symptoms and associated psychopathology at T1 and measures of Posttraumatic Stress (PTS) symptoms and associated psychopathology at T2. Self-reported trauma memory characteristics predicted ASD symptoms cross-sectionally at T1 and PTS symptoms prospectively over time. At both time points, self-reported trauma memory characteristics accounted for all of the unique variance in symptoms initially explained by narrative characteristics. A reduction in self-report ratings, but not the hypothesised narrative features (e.g., disorganised or lexical elements of the narrative), significantly predicted a reduction in PTS symptoms over time. The small sample size and the absence of a within-subjects narrative control were the main limitations of the study. These findings underscore the importance of self-reported trauma memory characteristics to the aetiology of PTSD. Copyright © 2016 Elsevier Ltd. All rights reserved.

Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.

PubMed

Wang, Hong; Zhu, Bowen; Wang, Hua; Ma, Xiaohua; Hao, Yue; Chen, Xiaodong

2016-07-01

Ultra-lightweight resistive switching memory based on protein has been demonstrated. The memory foil is 0.4 mg cm(-2) , which is 320-fold lighter than silicon substrate, 20-fold lighter than office paper and can be sustained by a human hair. Additionally, high resistance OFF/ON ratio of 10(5) , retention time of 10(4) s, and excellent flexibility (bending radius of 800 μm) have been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Hpp Rule with Memory and the Density Classification Task

NASA Astrophysics Data System (ADS)

Alonso-Sanz, Ramón

This article considers an extension to the standard framework of cellular automata by implementing memory capability in cells. It is shown that the important block HPP rule behaves as an excellent classifier of the density in the initial configuration when applied to cells endowed with pondered memory of their previous states. If the weighing is made so that the most recent state values are assigning the highest weights, the HPP rule surpasses the performance of the best two-dimensional density classifiers reported in the literature.

Low-voltage all-inorganic perovskite quantum dot transistor memory

NASA Astrophysics Data System (ADS)

Chen, Zhiliang; Zhang, Yating; Zhang, Heng; Yu, Yu; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Che, Yongli; Jin, Lufan; Li, Yifan; Li, Qingyan; Dai, Haitao; Yang, Junbo; Yao, Jianquan

2018-05-01

An all-inorganic cesium lead halide quantum dot (QD) based Au nanoparticle (NP) floating-gate memory with a solution processed layer-by-layer method is demonstrated. Easy synthesis at room temperature and excellent stability make all-inorganic CsPbBr3 perovskite QDs suitable as a semiconductor layer in low voltage nonvolatile transistor memory. The bipolarity of QDs has both electrons and holes stored in the Au NP floating gate, resulting in bidirectional shifts of initial threshold voltage according to the applied programing and erasing pulses. Under low operation voltage (±5 V), the memory achieved a great memory window (˜2.4 V), long retention time (>105 s), and stable endurance properties after 200 cycles. So the proposed memory device based on CsPbBr3 perovskite QDs has a great potential in the flash memory market.

Shape memory behavior of single and polycrystalline nickel rich nickel titanium alloys

NASA Astrophysics Data System (ADS)

Kaya, Irfan

NiTi is the most commonly used shape memory alloy (SMA) and has been widely used for bio-medical, electrical and mechanical applications. Nickel rich NiTi shape memory alloys are coming into prominence due to their distinct superelasticity and shape memory properties as compared to near equi-atomic NiTi shape memory alloys. Besides, their lower density and higher work output than steels makes these alloys an excellent candidate for aerospace and automotive industry. Shape memory properties and phase transformation behavior of high Ni-rich Ni54Ti46 (at.%) polycrystals and Ni-rich Ni 51Ti49 (at.%) single-crystals are determined. Their properties are sensitive to heat treatments that affect the phase transformation behavior of these alloys. Phase transformation properties and microstructure were investigated in aged Ni54Ti46 alloys with differential scanning calorimetry (DSC) and transmission electron microscopy (TEM) to reveal the precipitation characteristics and R-phase formation. It was found that Ni54Ti46 has the ability to exhibit perfect superelasticity under high stress levels (~2 GPa) with 4% total strain after 550°C-3h aging. Stress independent R-phase transformation was found to be responsible for the change in shape memory behavior with stress. The shape memory responses of [001], [011] and [111] oriented Ni 51Ti49 single-crystals alloy were reported under compression to reveal the orientation dependence of their shape memory behavior. It has been found that transformation strain, temperatures and hysteresis, Classius-Clapeyron slopes, critical stress for plastic deformation are highly orientation dependent. The effects of precipitation formation and compressive loading at selected temperatures on the two-way shape memory effect (TWSME) properties of a [111]- oriented Ni51Ti49 shape memory alloy were revealed. Additionally, aligned Ni4Ti3 precipitates were formed in a single crystal of Ni51Ti49 alloy by aging under applied compression stress along the [111] direction. Formation of a single family of Ni4Ti3 precipitates were exhibited significant TWSME without any training or deformation. When the homogenized and aged specimens were loaded in martensite, positive TWSME was observed. After loading at high temperature in austenite, the homogenized specimen did not show TWSME while the aged specimen revealed negative TWSME.

Characteristics of memories for near-death experiences.

PubMed

Moore, Lauren E; Greyson, Bruce

2017-05-01

Near-death experiences are vivid, life-changing experiences occurring to people who come close to death. Because some of their features, such as enhanced cognition despite compromised brain function, challenge our understanding of the mind-brain relationship, the question arises whether near-death experiences are imagined rather than real events. We administered the Memory Characteristics Questionnaire to 122 survivors of a close brush with death who reported near-death experiences. Participants completed Memory Characteristics Questionnaires for three different memories: that of their near-death experience, that of a real event around the same time, and that of an event they had imagined around the same time. The Memory Characteristics Questionnaire score was higher for the memory of the near-death experience than for that of the real event, which in turn was higher than that of the imagined event. These data suggest that memories of near-death experiences are recalled as "realer" than real events or imagined events. Copyright © 2017 Elsevier Inc. All rights reserved.

Recognition-induced forgetting of faces in visual long-term memory.

PubMed

Rugo, Kelsi F; Tamler, Kendall N; Woodman, Geoffrey F; Maxcey, Ashleigh M

2017-10-01

Despite more than a century of evidence that long-term memory for pictures and words are different, much of what we know about memory comes from studies using words. Recent research examining visual long-term memory has demonstrated that recognizing an object induces the forgetting of objects from the same category. This recognition-induced forgetting has been shown with a variety of everyday objects. However, unlike everyday objects, faces are objects of expertise. As a result, faces may be immune to recognition-induced forgetting. However, despite excellent memory for such stimuli, we found that faces were susceptible to recognition-induced forgetting. Our findings have implications for how models of human memory account for recognition-induced forgetting as well as represent objects of expertise and consequences for eyewitness testimony and the justice system.

Early memories come in small packages: episodic memory in young children and adults.

PubMed

Tustin, Karen; Hayne, Harlene

2016-11-01

In two experiments, 3-year-old children were tested using an operant train procedure based on one originally developed by Carolyn Rovee-Collier. Children's behavioral and verbal recall of the event was assessed after a 24 hr (Experiment 1) and a 1-year delay (Experiment 2). After the 1-year delay, their mothers' verbal recall of the same event was also assessed. After both delays, children exhibited excellent nonverbal memory. Children also exhibited verbal, episodic memory of the same event, but their verbal reports were lean relative to those of their mothers, suggesting that the memories may be more vulnerable to forgetting over the long term. These data have important implications for memory development and childhood amnesia. © 2016 Wiley Periodicals, Inc.

Place Learning in the Morris Water Task: Making the Memory Stick

ERIC Educational Resources Information Center

Bolding, Kevin; Rudy, Jerry W.

2006-01-01

Although the Morris water task has been used in hundreds of studies of place learning, there have been no systematic studies of retention of the place memory. We report that retention, as measured by selective search behavior on a probe trial, is excellent when the retention interval is short (5-10 min). However, performance rapidly deteriorates,…

FPGA cluster for high-performance AO real-time control system

NASA Astrophysics Data System (ADS)

Geng, Deli; Goodsell, Stephen J.; Basden, Alastair G.; Dipper, Nigel A.; Myers, Richard M.; Saunter, Chris D.

2006-06-01

Whilst the high throughput and low latency requirements for the next generation AO real-time control systems have posed a significant challenge to von Neumann architecture processor systems, the Field Programmable Gate Array (FPGA) has emerged as a long term solution with high performance on throughput and excellent predictability on latency. Moreover, FPGA devices have highly capable programmable interfacing, which lead to more highly integrated system. Nevertheless, a single FPGA is still not enough: multiple FPGA devices need to be clustered to perform the required subaperture processing and the reconstruction computation. In an AO real-time control system, the memory bandwidth is often the bottleneck of the system, simply because a vast amount of supporting data, e.g. pixel calibration maps and the reconstruction matrix, need to be accessed within a short period. The cluster, as a general computing architecture, has excellent scalability in processing throughput, memory bandwidth, memory capacity, and communication bandwidth. Problems, such as task distribution, node communication, system verification, are discussed.

A highly efficient silole-containing dithienylethene with excellent thermal stability and fatigue resistance: a promising candidate for optical memory storage materials.

PubMed

Chan, Jacky Chi-Hung; Lam, Wai Han; Yam, Vivian Wing-Wah

2014-12-10

Diarylethene compounds are potential candidates for applications in optical memory storage systems and photoswitchable molecular devices; however, they usually show low photocycloreversion quantum yields, which result in ineffective erasure processes. Here, we present the first highly efficient photochromic silole-containing dithienylethene with excellent thermal stability and fatigue resistance. The photochemical quantum yields for photocyclization and photocycloreversion of the compound are found to be high and comparable to each other; the latter of which is rarely found in diarylethene compounds. These would give rise to highly efficient photoswitchable material with effective writing and erasure processes. Incorporation of the silole moiety as a photochromic dithienylethene backbone also was demonstrated to enhance the thermal stability of the closed form, in which the thermal backward reaction to the open form was found to be negligible even at 100 °C, which leads to a promising candidate for use as photoswitchable materials and optical memory storage.

Biodegradable near-infrared-photoresponsive shape memory implants based on black phosphorus nanofillers.

PubMed

Xie, Hanhan; Shao, Jundong; Ma, Yufei; Wang, Jiahong; Huang, Hao; Yang, Na; Wang, Huaiyu; Ruan, Changshun; Luo, Yanfeng; Wang, Qu-Quan; Chu, Paul K; Yu, Xue-Feng

2018-05-01

In this paper, we propose a new shape memory polymer (SMP) composite with excellent near-infrared (NIR)-photoresponsive shape memory performance and biodegradability. The composite is fabricated by using piperazine-based polyurethane (PU) as thermo-responsive SMP incorporated with black-phosphorus (BP) sheets as NIR photothermal nanofillers. Under 808 nm light irradiation, the incorporated BP sheets with concentration of only 0.08 wt% enable rapid temperature increase over the glass temperature of PU and trigger the shape change of the composite with shape recovery rate of ∼100%. The in vitro and in vivo toxicity examinations demonstrate the good biocompatibility of the PU/BP composite, and it degrades naturally into non-toxic carbon dioxide and water from PU and non-toxic phosphate from BP. By implanting PU/BP columns into back subcutis and vagina of mice, they exhibit excellent shape memory activity to change their shape quickly under moderate 808 nm light irradiaiton. Such SMP composite enable the development of intelligent implantable devices, which can be easily controlled by the remote NIR light and degrade gradually after performing the designed functions in the body. Copyright © 2018 Elsevier Ltd. All rights reserved.

Wavefront shaping with disorder-engineered metasurfaces

NASA Astrophysics Data System (ADS)

Jang, Mooseok; Horie, Yu; Shibukawa, Atsushi; Brake, Joshua; Liu, Yan; Kamali, Seyedeh Mahsa; Arbabi, Amir; Ruan, Haowen; Faraon, Andrei; Yang, Changhuei

2018-02-01

Recently, wavefront shaping with disordered media has demonstrated optical manipulation capabilities beyond those of conventional optics, including extended volume, aberration-free focusing and subwavelength focusing. However, translating these capabilities to useful applications has remained challenging as the input-output characteristics of the disordered media (P variables) need to be exhaustively determined via O(P) measurements. Here, we propose a paradigm shift where the disorder is specifically designed so its exact input-output characteristics are known a priori and can be used with only a few alignment steps. We implement this concept with a disorder-engineered metasurface, which exhibits additional unique features for wavefront shaping such as a large optical memory effect range in combination with a wide angular scattering range, excellent stability, and a tailorable angular scattering profile. Using this designed metasurface with wavefront shaping, we demonstrate high numerical aperture (NA > 0.5) focusing and fluorescence imaging with an estimated 2.2 × 108 addressable points in an 8 mm field of view.

Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory.

PubMed

Ye, Yalong; Zhao, Jie; Xiao, Li; Cheng, Baochang; Xiao, Yanhe; Lei, Shuijin

2018-06-06

Hybrid nanostructures can show enormous potential in different areas because of their unique structural configurations. Herein, Fe@Al 2 O 3 hybrid nanotubes are constructed via a homogeneous coprecipitation method followed by subsequent annealing in a reducing atmosphere. The introduction of zero band gap Fe nanocrystals in the wall of ultrawide band gap Al 2 O 3 insulator nanotubes results in the formation of charge trap centers, and correspondingly a single hybrid nanotube-based two-terminal device can show reversible negative resistive switching (RS) characteristics with symmetrical negative differential resistance (NDR) at relatively high operation bias voltages. At a large bias voltage, holes and electrons can be injected into traps at two ends from electrodes, respectively, and then captured. The bias voltage dependence of asymmetrical filling of charges can lead to a reversible variation of built-in electromotive force, and therefore the symmetrical negative RS with NDR arises from two reversible back-to-back series bipolar RS. At a low readout voltage, the single Fe@Al 2 O 3 hybrid nanotube can show an excellent nonvolatile memory feature with a relatively large switching ratio of ∼30. The bias-governed reversible negative RS with superior stability, reversibility, nondestructive readout, and remarkable cycle performance makes it a potential candidate in next-generation erasable nonvolatile resistive random access memories.

Formation of SiGe nanocrystals embedded in Al{sub 2}O{sub 3} for the application of write-once-read-many-times memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Min-Lin; Wu, Yung-Hsien; Lin, Chia-Chun

2012-10-15

The structure of SiGe nanocrystals embedded in Al{sub 2}O{sub 3} formed by sequential deposition of Al{sub 2}O{sub 3}/Si/Ge/Al{sub 2}O{sub 3} and a subsequent annealing was confirmed by transmission electron microscopy and energy dispersive spectroscopy (EDS), and its application for write-once-read-many-times (WORM) memory devices was explored in this study. By applying a -10 V pulse for 1 s, a large amount of holes injected from Si substrate are stored in the nanocrystals and consequently, the current at +1.5 V increases by a factor of 10{sup 4} as compared to that of the initial state. Even with a smaller -5 V pulsemore » for 1 {mu}s, a sufficiently large current ratio of 36 can still be obtained, verifying the low power operation. Since holes are stored in nanocrystals which are isolated from Si substrate by Al{sub 2}O{sub 3} with good integrity and correspond to a large valence band offset with respect to Al{sub 2}O{sub 3}, desirable read endurance up to 10{sup 5} cycles and excellent retention over 100 yr are achieved. Combining these promising characteristics, WORM memory devices are appropriate for high-performance archival storage applications.« less

Selective effects of emotion on the phenomenal characteristics of autobiographical memories.

PubMed

Schaefer, Alexandre; Philippot, Pierre

2005-02-01

The present study investigates the emotional determinants of the phenomenal characteristics of autobiographical memories. A total of 84 participants completed the Memory Characteristics Questionnaire (MCQ, Johnson, Foley, Suengas, & Raye, 1988) after retrieving and orally describing a negative, a positive, and a neutral autobiographical memory. In addition, self-report and physiological measures of emotional state at retrieval were recorded. Results suggest that recall of perceptual, sensory, and semantic elements is better for emotional memories than for neutral ones. This difference is not significant for contextual and temporal aspects, suggesting that emotional memories are more vivid but no more specific than are neutral ones. In addition, positive memories yielded higher MCQ ratings than did negative memories for sensory, temporal, and contextual aspects. Finally, correlations suggest a positive relation between emotional state at retrieval and level of phenomenal detail of retrieved memories. Results are interpreted in terms of multilevel models of emotion and of Conway and Pleydell-Pearce's (2000) model.

Sex differences in episodic memory: the impact of verbal and visuospatial ability.

PubMed

Herlitz, A; Airaksinen, E; Nordström, E

1999-10-01

The impact of verbal and visuospatial ability on sex differences in episodic memory was investigated. One hundred men and 100 women, 2040 years old, participated in a series of verbal and visuospatial tasks. Episodic memory was assessed in tasks that, to a greater or lesser extent, were verbal or visuospatial in nature. Results showed that women excelled in verbal production tasks and that men performed at a superior level on a mental rotation task. In addition, women tended to perform at a higher level than men on most episodic memory tasks. Taken together, the results demonstrated that (a) women perform at a higher level than men on most verbal episodic memory tasks and on some episodic memory tasks with a visuospatial component, and (b) women's higher performance on episodic memory tasks cannot fully be explained by their superior performance on verbal production tasks.

Compression in Working Memory and Its Relationship With Fluid Intelligence.

PubMed

Chekaf, Mustapha; Gauvrit, Nicolas; Guida, Alessandro; Mathy, Fabien

2018-06-01

Working memory has been shown to be strongly related to fluid intelligence; however, our goal is to shed further light on the process of information compression in working memory as a determining factor of fluid intelligence. Our main hypothesis was that compression in working memory is an excellent indicator for studying the relationship between working-memory capacity and fluid intelligence because both depend on the optimization of storage capacity. Compressibility of memoranda was estimated using an algorithmic complexity metric. The results showed that compressibility can be used to predict working-memory performance and that fluid intelligence is well predicted by the ability to compress information. We conclude that the ability to compress information in working memory is the reason why both manipulation and retention of information are linked to intelligence. This result offers a new concept of intelligence based on the idea that compression and intelligence are equivalent problems. Copyright © 2018 Cognitive Science Society, Inc.

Cognitive Control Network Contributions to Memory-Guided Visual Attention

PubMed Central

Rosen, Maya L.; Stern, Chantal E.; Michalka, Samantha W.; Devaney, Kathryn J.; Somers, David C.

2016-01-01

Visual attentional capacity is severely limited, but humans excel in familiar visual contexts, in part because long-term memories guide efficient deployment of attention. To investigate the neural substrates that support memory-guided visual attention, we performed a set of functional MRI experiments that contrast long-term, memory-guided visuospatial attention with stimulus-guided visuospatial attention in a change detection task. Whereas the dorsal attention network was activated for both forms of attention, the cognitive control network (CCN) was preferentially activated during memory-guided attention. Three posterior nodes in the CCN, posterior precuneus, posterior callosal sulcus/mid-cingulate, and lateral intraparietal sulcus exhibited the greatest specificity for memory-guided attention. These 3 regions exhibit functional connectivity at rest, and we propose that they form a subnetwork within the broader CCN. Based on the task activation patterns, we conclude that the nodes of this subnetwork are preferentially recruited for long-term memory guidance of visuospatial attention. PMID:25750253

Postnatal Developmental Trajectories of Neural Circuits in the Primate Prefrontal Cortex: Identifying Sensitive Periods for Vulnerability to Schizophrenia

PubMed Central

Hoftman, Gil D.; Lewis, David A.

2011-01-01

Schizophrenia is a disorder of cognitive neurodevelopment with characteristic abnormalities in working memory attributed, at least in part, to alterations in the circuitry of the dorsolateral prefrontal cortex. Various environmental exposures from conception through adolescence increase risk for the illness, possibly by altering the developmental trajectories of prefrontal cortical circuits. Macaque monkeys provide an excellent model system for studying the maturation of prefrontal cortical circuits. Here, we review the development of glutamatergic and γ-aminobutyric acid (GABA)-ergic circuits in macaque monkey prefrontal cortex and discuss how these trajectories may help to identify sensitive periods during which environmental exposures, such as those associated with increased risk for schizophrenia, might lead to the types of abnormalities in prefrontal cortical function present in schizophrenia. PMID:21505116

Designing high-performance cost-efficient embedded SRAM in deep-submicron era

NASA Astrophysics Data System (ADS)

Kobozeva, Olga; Venkatraman, Ramnath; Castagnetti, Ruggero; Duan, Franklin; Kamath, Arvind; Ramesh, Shiva

2004-05-01

We have previously presented the smallest and fastest 6 Transistor (6T)-Static Random Access Memories (SRAM) bitcells for System-on-Chip (SoC) high-density (HD) memories in 0.18 μm and 0.13 μm technologies. Our 1.87 μm2 6TSRAM bitcell with cell current of 47 μA and industry lowest soft error rate (0.35 FIT/Kbit) is used to assemble memory blocks embedded into SoC designs in 0.13 μm process technology. Excellent performance is achieved at a low overall cost, as our bitcells are based on standard CMOS process and demonstrate high yields in manufacturing. This paper discusses our methodology of embedded SRAM bitcell design. The key aspects of our approach are: 1) judicious selection of tightest achievable yet manufacturable design rules to build the cell; 2) compatibility with standard Optical Proximity Correction (OPC) flow; 3) use of parametric testing and yield analysis to achieve excellent design robustness and manufacturability. A thorough understanding of process limitations, particularly those related to photolithography was critical to the successful design and manufacturing of our aggressive, yet robust SRAM bitcells. The patterning of critical layers, such as diffusion, poly gate, contact and metal 1 has profound implications on functionality, electrical performance and manufacturability of memories. We have conducted the development of SRAM bitcells using two approaches for OPC: a) "manual" OPC, wherein the bitcell layout of each of the critical layers is achieved using iterative improvement of layout & aerial image simulation and b) automated OPC-compatible design, wherein the drawn bitcell layout becomes a subject of a full chip OPC. While manual-OPC remains a popular option, automated OPC-compatible bitcell design is very attractive, as it does not require additional development costs to achieve fab-to-fab portability. In both cases we have obtained good results with respect to patterning of the critical layers, electrical performance of the bitcell and memory yields. A critical part of our memory technology development effort is the design of memory-specific test structures that are used for: a) verifying electrical characteristics of SRAM transistors and b) confirming the robustness of the design rules used within the SRAM cell. In addition to electrical test structures, we have a fully functional SRAM test chip called RAMPCM that is composed of sub-blocks each designated to evaluate the robustness of a specific critical design rule used within the bitcells. The results from the electrical testing and RAMPCM yield analysis are used to identify opportunities for improvements in the layout design. The paper will also suggest some techniques that can result in more design friendly OPC solutions. Our work indicates that future IC designs can benefit from an automated OPC tool that can intelligently handle layout modifications according to design priorities.

The Importance of Memory Specificity and Memory Coherence for the Self: Linking Two Characteristics of Autobiographical Memory

PubMed Central

Vanderveren, Elien; Bijttebier, Patricia; Hermans, Dirk

2017-01-01

Autobiographical memory forms a network of memories about personal experiences that defines and supports well-being and effective functioning of the self in various ways. During the last three decades, there have been two characteristics of autobiographical memory that have received special interest regarding their role in psychological well-being and psychopathology, namely memory specificity and memory coherence. Memory specificity refers to the extent to which retrieved autobiographical memories are specific (i.e., memories about a particular experience that happened on a particular day). Difficulty retrieving specific memories interferes with effective functioning of the self and is related to depression and post-traumatic stress disorder. Memory coherence refers to the narrative expression of the overall structure of autobiographical memories. It has likewise been related to psychological well-being and the occurrence of psychopathology. Research on memory specificity and memory coherence has developed as two largely independent research domains, even though they show much overlap. This raises some important theoretical questions. How do these two characteristics of autobiographical memory relate to each other, both theoretically and empirically? Additionally, how can the integration of these two facilitate our understanding of the importance of autobiographical memory for the self? In this article, we give a critical overview of memory specificity and memory coherence and their relation to the self. We link both features of autobiographical memory by describing some important similarities and by formulating hypotheses about how they might relate to each other. By situating both memory specificity and memory coherence within Conway and Pleydell-Pearce’s Self-Memory System, we make a first attempt at a theoretical integration. Finally, we suggest some new and exciting research possibilities and explain how both research fields could benefit from integration in future research. PMID:29312089

Phenomenological characteristics of autobiographical memory in Korsakoff's syndrome.

PubMed

El Haj, Mohamad; Nandrino, Jean-Louis

2017-10-01

A body of research suggests compromise of autobiographical memory in Korsakoff's syndrome (KS). The present paper extends this literature by investigating the subjective experience of autobiographical recall in the syndrome. Patients with KS and controls were asked to retrieve autobiographical memories. After memory retrieval, participants were asked to rate phenomenological characteristics of their memories (i.e., reliving, back in time, remembering, realness, visual imagery, auditory imagery, language, emotion, rehearsal, importance, spatial recall and temporal recall). Analysis showed lower "Mean Phenomenological Experience" in the Korsakoff patients than in controls. However, the Korsakoff patients attributed relatively high emotional value and importance to their memories. Although our findings suggest compromised phenomenological reliving of autobiographical memory in patients with KS, affective characteristics such as emotion and importance are likely to play a main role in the subjective experience of the past in these patients. Copyright © 2017 Elsevier Inc. All rights reserved.

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

NASA Astrophysics Data System (ADS)

Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

2017-09-01

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

Intrafamilial similarities and cross-generational differences in the earliest childhood memories of daughters, mothers, and grandmothers.

PubMed

Sahin-Acar, Basak; Bakir, Tugce; Kus, Elif Gizem

2017-09-01

This study aimed to examine how daughters, mothers, and grandmothers from the same families resembled each other and how these three generations differed from each other in narrating their earliest childhood memories. Fifty-nine triads from the same families filled out a memory questionnaire and were asked to narrate their earliest childhood memories. Results revealed both intrafamilial similarities and cross-generational difference on characteristics of triads' earliest childhood memories. After earliest childhood memories were coded for memory characteristics, we measured intrafamilial similarities using intra-class correlation coefficients across three generations for each memory characteristic. Results revealed that the earliest childhood memories of members of the same family were significantly similar in terms of level of detail and volume. Although similar patterns among members of the same families were observed in self-related and other-related words, the other/self ratio did not display an intrafamilial similarity. We also measured cross-generational differences and found that daughters' reported age of their earliest childhood memories was dated significantly earlier compared to their grandmothers. Results revealed predominant intrafamilial similarities among the members of the same family and cross-generational differences in terms of the age of the earliest childhood memory.

Development and psychometric properties of a new measure for memory phenomenology: The Autobiographical Memory Characteristics Questionnaire.

PubMed

Boyacioglu, Inci; Akfirat, Serap

2015-01-01

The purpose of this study is to develop a valid and reliable measure for the phenomenology of autobiographical memories. The psychometric properties of the Autobiographical Memory Characteristics Questionnaire (AMCQ) were tested in three studies: the factor structure of the AMCQ was examined for childhood memories in Study 1 (N = 305); for autobiographical memories related to romantic relationships in Study 2 (N = 197); and for self-defining memories in Study 3 (N = 262). The explanatory factor analyses performed for each memory type demonstrated the consistency of the AMCQ factor structure across all memory types; while a confirmatory factor analysis on the data garnered from all three studies supported the constructs for the autobiographical memory characteristics defined by the researchers. The AMCQ consists of 63 items and 14 factors, and the internal consistency values of all 14 scales were ranged between .66 and .97. The relationships between the AMCQ scales related to gender and individual emotions, as well as the intercorrelations among the scales, were consistent with both theoretical expectations and previous findings. The results of all the three studies indicated that this new instrument is a reliable and robust measure for memory phenomenology.

The chicken or the egg? Systematic investigation of the effect of order of administration of Memory Questionnaires and Well-being Scales.

PubMed

Philippe, Frederick L; Bouizegarene, Nabil; Guilbault, Valérie; Rajotte, Guillaume; Houle, Iliane

2015-01-01

Narrative research claims that episodic/autobiographical memory characteristics and themes represent stable individual differences that relate to well-being. However, the effects of the order of administration of memory descriptions and well-being scales have never been investigated. Of importance, social cognitive research has shown that trivial contextual factors, such as completing a self-report measure, can influence the type of memories recollected afterwards and that memory recollection can transiently affect subsequent self-report ratings--both of which underscore that transient contextual effects, rather than stable individual differences in memory could be responsible for the correlation between memory characteristics and well-being. The present study examined if the order in which (positive or negative) memory and well-being scales are completed affects the characteristics and themes of the memory described, the scores of well-being reported and the relationship between the two. The results revealed some effects of order of administration when memories were described before completing well-being scales, but only on a situational measure of well-being, not on a trait measure. In sum, we recommend assessing memory-related material at the end of questionnaires to avoid potential mood-priming effects.

Solution processed molecular floating gate for flexible flash memories

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-10-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Microstructure and Shape Memory Behavior of Ti-Nb Shape Memory Alloy Thin Film

NASA Astrophysics Data System (ADS)

Meng, X. L.; Sun, B.; Sun, J. Y.; Gao, Z. Y.; Cai, W.; Zhao, L. C.

2017-09-01

Ti-Nb shape memory alloy (SMA) thin film is a promising candidate applied as microactuator in biomedical field. In this study, the microstructure and shape memory behavior of Ti-Nb SMA thin films in different heat treatment conditions have been investigated. Fine ω phases embedded in the β phase matrix suppress the martensitic transformation of the films. As a result, the as-deposited and most of the annealed films consist of the β and α″ dual phases. The annealed Ti-Nb thin film shows excellent superelasticity effect when deformed above the reverse martensitic transformation temperature, that is 3.5% total recovery strain can be obtained when 4% pre-strain is loaded.

Solution processed molecular floating gate for flexible flash memories

PubMed Central

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-01-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

SONOS Nonvolatile Memory Cell Programming Characteristics

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2010-01-01

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

How intention and monitoring your thoughts influence characteristics of autobiographical memories.

PubMed

Barzykowski, Krystian; Staugaard, Søren Risløv

2018-05-01

Involuntary autobiographical memories come to mind effortlessly and unintended, but the mechanisms of their retrieval are not fully understood. We hypothesize that involuntary retrieval depends on memories that are highly accessible (e.g., intense, unusual, recent, rehearsed), while the elaborate search that characterizes voluntary retrieval also produces memories that are mundane, repeated or distant - memories with low accessibility. Previous research provides some evidence for this 'threshold hypothesis'. However, in almost every prior study, participants have been instructed to report only memories while ignoring other thoughts. It is possible that such an instruction can modify the phenomenological characteristics of involuntary memories. This study aimed to investigate the effects of retrieval intentionality (i.e., wanting to retrieve a memory) and selective monitoring (i.e., instructions to report only memories) on the phenomenology of autobiographical memories. Participants were instructed to (1) intentionally retrieve autobiographical memories, (2) intentionally retrieve any type of thought (3) wait for an autobiographical memory to spontaneously appear, or (4) wait for any type of thought to spontaneously appear. They rated the mental content on a number of phenomenological characteristics both during retrieval and retrospectively following retrieval. The results support the prediction that highly accessible memories mostly enter awareness unintended and without selective monitoring, while memories with low accessibility rely on intention and selective monitoring. We discuss the implications of these effects. © 2017 The British Psychological Society.

Microwave-Assisted Size Control of Colloidal Nickel Nanocrystals for Colloidal Nanocrystals-Based Non-volatile Memory Devices

NASA Astrophysics Data System (ADS)

Yadav, Manoj; Velampati, Ravi Shankar R.; Mandal, D.; Sharma, Rohit

2018-03-01

Colloidal synthesis and size control of nickel (Ni) nanocrystals (NCs) below 10 nm are reported using a microwave synthesis method. The synthesised colloidal NCs have been characterized using x-ray diffraction, transmission electron microscopy (TEM) and dynamic light scattering (DLS). XRD analysis highlights the face centred cubic crystal structure of synthesised NCs. The size of NCs observed using TEM and DLS have a distribution between 2.6 nm and 10 nm. Furthermore, atomic force microscopy analysis of spin-coated NCs over a silicon dioxide surface has been carried out to identify an optimum spin condition that can be used for the fabrication of a metal oxide semiconductor (MOS) non-volatile memory (NVM) capacitor. Subsequently, the fabrication of a MOS NVM capacitor is reported to demonstrate the potential application of colloidal synthesized Ni NCs in NVM devices. We also report the capacitance-voltage (C-V) and capacitance-time (C-t) response of the fabricated MOS NVM capacitor. The C-V and C-t characteristics depict a large flat band voltage shift (V FB) and high retention time, respectively, which indicate that colloidal Ni NCs are excellent candidates for applications in next-generation NVM devices.

Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

2018-03-01

For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

NASA Astrophysics Data System (ADS)

Gifford, Kenneth Douglas

Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to ~2times10^ {10} switching cycles), low dc leakage current, and excellent retention are observed in capacitor structures containing polycrystalline PZT (exhibiting dominant (001) and (100) XRD reflections), a Pt-RuO_2 hybrid bottom electrode (Type IA), and an RuO _2 top electrode. These results, and electrical characterization results on capacitors containing co-deposited Pt-RuO_2 hybrid electrodes (Type II), show potential for application of these capacitor structures in NVRAM and DRAM memory devices.

Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

NASA Astrophysics Data System (ADS)

Li, S.; Guérin, D.; Lenfant, S.; Lmimouni, K.

2018-02-01

Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

Low density biodegradable shape memory polyurethane foams for embolic biomedical applications

PubMed Central

Singhal, Pooja; Small, Ward; Cosgriff-Hernandez, Elizabeth; Maitland, Duncan J; Wilson, Thomas S

2014-01-01

Low density shape memory polymer foams hold significant interest in the biomaterials community for their potential use in minimally invasive embolic biomedical applications. The unique shape memory behavior of these foams allows them to be compressed to a miniaturized form, which can be delivered to an anatomical site via a transcatheter process, and thereafter actuated to embolize the desired area. Previous work in this field has described the use of a highly covalently crosslinked polymer structure for maintaining excellent mechanical and shape memory properties at the application-specific ultra low densities. This work is aimed at further expanding the utility of these biomaterials, as implantable low density shape memory polymer foams, by introducing controlled biodegradability. A highly covalently crosslinked network structure was maintained by use of low molecular weight, symmetrical and polyfunctional hydroxyl monomers such as Polycaprolactone triol (PCL-t, Mn 900 g), N,N,N0,N0-Tetrakis (hydroxypropyl) ethylenediamine (HPED), and Tris (2-hydroxyethyl) amine (TEA). Control over the degradation rate of the materials was achieved by changing the concentration of the degradable PCL-t monomer, and by varying the material hydrophobicity. These porous SMP materials exhibit a uniform cell morphology and excellent shape recovery, along with controllable actuation temperature and degradation rate. We believe that they form a new class of low density biodegradable SMP scaffolds that can potentially be used as “smart” non-permanent implants in multiple minimally invasive biomedical applications. PMID:24090987

Elucidation and Optimization of Resistive Random Access Memory Switching Behavior for Advanced Computing Applications

NASA Astrophysics Data System (ADS)

Alamgir, Zahiruddin

RRAM has recently emerged as a strong candidate for non-volatile memory (NVM). Beyond memory applications, RRAM holds promise for use in performing logic functions, mimicking neuromorphic activities, enabling multi-level switching, and as one of the key elements of hardware based encryption or signal processing systems. It has been shown previously that RRAM resistance levels can be changed by adjusting compliance current or voltage level. This characteristic makes RRAM suitable for use in setting the synaptic weight in neuromorphic computing circuits. RRAM is also considered as a key element in hardware encryption systems, to produce unique and reproducible signals. However, a key challenge to implement RRAM in these applications is significant cycle to cycle performance variability. We sought to develop RRAM that can be tuned to different resistance levels gradually, with high reliability, and low variability. To achieve this goal, we focused on elucidating the conduction mechanisms underlying the resistive switching behavior for these devices. Electrical conduction mechanisms were determined by curve fitting I-V data using different current conduction equations. Temperature studies were also performed to corroborate these data. It was found that Schottky barrier height and width modulation was one of the key parameters that could be tuned to achieve different resistance levels, and for switching resistance states, primarily via oxygen vacancy movement. Oxygen exchange layers with different electronegativity were placed between top electrode and the oxide layer of TaOx devices to determine the effect of oxygen vacancy concentrations and gradients in these devices. It was found that devices with OELs with lower electronegativity tend to yield greater separation in the OFF vs. ON state resistance levels. As an extension of this work, TaOx based RRAM with Hf as the OEL was fabricated and could be tuned to different resistance level using pulse width and height modulation, yielding excellent uniformity and reliability. These findings improve our understanding of conduction within TaO x-based RRAM devices, providing a physical basis for switching in these devices. The value of this work lies in the demonstration of devices with excellent performance and demonstrated devices constitute a significant step toward real-world applications.

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

NASA Astrophysics Data System (ADS)

Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

2017-12-01

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (<=30 ns), excellent endurance (~1012 cycles), stability (>106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Biodegradable Shape Memory Polymers in Medicine.

PubMed

Peterson, Gregory I; Dobrynin, Andrey V; Becker, Matthew L

2017-11-01

Shape memory materials have emerged as an important class of materials in medicine due to their ability to change shape in response to a specific stimulus, enabling the simplification of medical procedures, use of minimally invasive techniques, and access to new treatment modalities. Shape memory polymers, in particular, are well suited for such applications given their excellent shape memory performance, tunable materials properties, minimal toxicity, and potential for biodegradation and resorption. This review provides an overview of biodegradable shape memory polymers that have been used in medical applications. The majority of biodegradable shape memory polymers are based on thermally responsive polyesters or polymers that contain hydrolyzable ester linkages. These materials have been targeted for use in applications pertaining to embolization, drug delivery, stents, tissue engineering, and wound closure. The development of biodegradable shape memory polymers with unique properties or responsiveness to novel stimuli has the potential to facilitate the optimization and development of new medical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-strain slide-ring shape-memory polycaprolactone-based polyurethane.

PubMed

Wu, Ruiqing; Lai, Jingjuan; Pan, Yi; Zheng, Zhaohui; Ding, Xiaobin

2018-06-06

To enable shape-memory polymer networks to achieve recoverable high deformability with a simultaneous high shape-fixity ratio and shape-recovery ratio, novel semi-crystalline slide-ring shape-memory polycaprolactone-based polyurethane (SR-SMPCLU) with movable net-points constructed by a topologically interlocked slide-ring structure was designed and fabricated. The SR-SMPCLU not only exhibited good shape fixity, almost complete shape recovery, and a fast shape-recovery speed, it also showed an outstanding recoverable high-strain capacity with 95.83% Rr under a deformation strain of 1410% due to the pulley effect of the topological slide-ring structure. Furthermore, the SR-SMPCLU system maintained excellent shape-memory performance with increasing the training cycle numbers at 45% and even 280% deformation strain. The effects of the slide-ring cross-linker content, deformation strain, and successive shape-memory cycles on the shape-memory performance were investigated. A possible mechanism for the shape-memory effect of the SR-SMPCLU system is proposed.

When your face describes your memories: facial expressions during retrieval of autobiographical memories.

PubMed

El Haj, Mohamad; Daoudi, Mohamed; Gallouj, Karim; Moustafa, Ahmed A; Nandrino, Jean-Louis

2018-05-11

Thanks to the current advances in the software analysis of facial expressions, there is a burgeoning interest in understanding emotional facial expressions observed during the retrieval of autobiographical memories. This review describes the research on facial expressions during autobiographical retrieval showing distinct emotional facial expressions according to the characteristics of retrieved memoires. More specifically, this research demonstrates that the retrieval of emotional memories can trigger corresponding emotional facial expressions (e.g. positive memories may trigger positive facial expressions). Also, this study demonstrates the variations of facial expressions according to specificity, self-relevance, or past versus future direction of memory construction. Besides linking research on facial expressions during autobiographical retrieval to cognitive and affective characteristics of autobiographical memory in general, this review positions this research within the broader context research on the physiologic characteristics of autobiographical retrieval. We also provide several perspectives for clinical studies to investigate facial expressions in populations with deficits in autobiographical memory (e.g. whether autobiographical overgenerality in neurologic and psychiatric populations may trigger few emotional facial expressions). In sum, this review paper demonstrates how the evaluation of facial expressions during autobiographical retrieval may help understand the functioning and dysfunctioning of autobiographical memory.

Nanogap-Engineerable Electromechanical System for Ultralow Power Memory.

PubMed

Zhang, Jian; Deng, Ya; Hu, Xiao; Nshimiyimana, Jean Pierre; Liu, Siyu; Chi, Xiannian; Wu, Pei; Dong, Fengliang; Chen, Peipei; Chu, Weiguo; Zhou, Haiqing; Sun, Lianfeng

2018-02-01

Nanogap engineering of low-dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10 -19 J bit -1 ), ON/OFF ratio of 10 5 , stable switching ON operations, and over 30 h retention time in ambient conditions.

Max-plus and min-plus projection autoassociative morphological memories and their compositions for pattern classification.

PubMed

Dos Santos, Alex Santana; Valle, Marcos Eduardo

2018-04-01

Autoassociative morphological memories (AMMs) are robust and computationally efficient memory models with unlimited storage capacity. In this paper, we present the max-plus and min-plus projection autoassociative morphological memories (PAMMs) as well as their compositions. Briefly, the max-plus PAMM yields the largest max-plus combination of the stored vectors which is less than or equal to the input. Dually, the vector recalled by the min-plus PAMM corresponds to the smallest min-plus combination which is larger than or equal to the input. Apart from unlimited absolute storage capacity and one step retrieval, PAMMs and their compositions exhibit an excellent noise tolerance. Furthermore, the new memories yielded quite promising results in classification problems with a large number of features and classes. Copyright © 2018 Elsevier Ltd. All rights reserved.

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

PubMed Central

Zhang, Jian; Deng, Ya; Hu, Xiao; Nshimiyimana, Jean Pierre; Liu, Siyu; Chi, Xiannian; Wu, Pei; Dong, Fengliang; Chen, Peipei

2017-01-01

Abstract Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub‐5 nm nanogaped single‐walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10−19 J bit−1), ON/OFF ratio of 105, stable switching ON operations, and over 30 h retention time in ambient conditions. PMID:29619307

Gustatory processing and taste memory in Drosophila

PubMed Central

Masek, Pavel; Keene, Alex C.

2018-01-01

Taste allows animals to discriminate the value and potential toxicity of food prior to ingestion. Many tastants elicit an innate attractive or avoidance response that is modifiable with nutritional state and prior experience. A powerful genetic tool kit, well-characterized gustatory system, and standardized behavioral assays make the fruit fly, Drosophila melanogaster, an excellent system for investigating taste processing and memory. Recent studies have used this system to identify the neural basis for acquired taste preference. These studies have revealed a role for dopamine-mediated plasticity of the mushroom bodies that modulate the threshold of response to appetitive tastants. The identification of neural circuitry regulating taste memory provides a system to study the genetic and physiological processes that govern plasticity within a defined memory circuit. PMID:27328844

Cue generation and memory construction in direct and generative autobiographical memory retrieval.

PubMed

Harris, Celia B; O'Connor, Akira R; Sutton, John

2015-05-01

Theories of autobiographical memory emphasise effortful, generative search processes in memory retrieval. However recent research suggests that memories are often retrieved directly, without effortful search. We investigated whether direct and generative retrieval differed in the characteristics of memories recalled, or only in terms of retrieval latency. Participants recalled autobiographical memories in response to cue words. For each memory, they reported whether it was retrieved directly or generatively, rated its visuo-spatial perspective, and judged its accompanying recollective experience. Our results indicated that direct retrieval was commonly reported and was faster than generative retrieval, replicating recent findings. The characteristics of directly retrieved memories differed from generatively retrieved memories: directly retrieved memories had higher field perspective ratings and lower observer perspective ratings. However, retrieval mode did not influence recollective experience. We discuss our findings in terms of cue generation and content construction, and the implication for reconstructive models of autobiographical memory. Copyright © 2015 Elsevier Inc. All rights reserved.

Brain lateralization and neural plasticity for musical and cognitive abilities in an epileptic musician

PubMed Central

Trujillo-Pozo, Isabel; Martín-Monzón, Isabel; Rodríguez-Romero, Rafael

2013-01-01

The use of intracarotid propofol procedure (IPP) when assessing musical lateralization has not been reported in literature up to now. This procedure (similar to Wada Test) has provided the opportunity to investigate not only lateralization of language and memory functions on epileptic patients but also offers a functional mapping approach with superior spatial and temporal resolution to analyze the lateralization of musical abilities. Findings in literature suggest that musical training modifies functional and structural brain organization. We studied hemispheric lateralization in a professional musician, a 33 years old woman with refractory left medial temporal lobe (MTL) epilepsy (TLE). A longitudinal neuropsychological study was performed over a period of 21 months. Before epilepsy surgery, musical abilities, language and memory were tested during IPP by means of a novel and exhaustive neuropsychological battery focusing on the processing of music. We used a selection of stimuli to analyze listening, score reading, and tempo discrimination. Our results suggested that IPP is an excellent method to determine not only language, semantic, and episodic memory, but also musical dominance in a professional musician who may be candidate for epilepsy surgery. Neuropsychological testing revealed that right hemisphere's patient is involved in semantic and episodic musical memory processes, whereas her score reading and tempo processing require contribution from both hemispheres. At one-year follow-up, outcome was excellent with respect to seizures and professional skills, meanwhile cognitive abilities improved. These findings indicate that IPP helps to predict who might be at risk for postoperative musical, language, and memory deficits after epilepsy surgery. Our research suggests that musical expertise and epilepsy critically modifies long-term memory processes and induces brain structural and functional plasticity. PMID:24367312

Three Types of Memory for Childhood Sexual Abuse: Relationships to Characteristics of Abuse and Psychological Symptoms

ERIC Educational Resources Information Center

Crowley, M. Sue

2008-01-01

Data from a clinical sample (N = 88) reporting childhood sexual abuse was compared by types of memory, abuse characteristics, and psychological symptoms. Three types of memory were identified from a questionnaire ("Always" n = 27 [31%], "Recovered" n = 41 [46%], and "Both" n = 20 [23%]). When compared with narrative…

Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices

NASA Astrophysics Data System (ADS)

Yang, Mei; Wang, Hong; Ma, Xiaohua; Gao, Haixia; Wang, Bin

2017-12-01

Nitrides could create opportunities of tuning resistive-switching (RS) characteristics due to their different electrical properties and ionic chemistry with oxides. Here, we reported on the effect of nitrogen-accommodation ability of electrodes in SiNx-based RS devices. The Ti/SiNx/Pt devices show a self-compliance bipolar RS with excellent reliability. The W/SiNx/Pt devices provide an unstable RS and fall to an intermediate resistance state (IRS) after a set process. The low resistance states of the Ti/SiNx/Pt devices obey Ohmic conduction and Frenkel-Poole emission from a conductive channel. The IRS of the W/SiNx/Pt devices conforms to Schottky emission and Fowler-Nordheim tunneling from a conductive channel/insulator/electrode structure. A nitrogen-ion-based model is proposed to explain the experimental results. According to the model, the nitrogen-accommodation ability of the electrodes dominates the nitrogen-reservoir size and the nitrogen-ion migration at the metal/SiNx interface, modulating the RS characteristics of the SiNx memory devices.

4 Types of Foods that Boost Your Memory

MedlinePlus

... message. Getting adequate vegetables, especially cruciferous ones including broccoli, cabbage and dark leafy greens, may help improve ... for a tortilla in your next sandwich wrap. Broccoli stir-fry also is an excellent option for ...

Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide.

PubMed

Han, Su-Ting; Zhou, Ye; Yang, Qing Dan; Zhou, Li; Huang, Long-Biao; Yan, Yan; Lee, Chun-Sing; Roy, Vellaisamy A L

2014-02-25

Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.

Remote memory in a patient with amnesia due to hypoxia.

PubMed

Beatty, W W; Salmon, D P; Bernstein, N; Butters, N

1987-08-01

It has been suggested that amnesic patients suffer a selective loss of episodic memory while semantic memory remains well preserved. To assess the validity of this idea we studied remote memory in an amnesic patient, (M.R.L.), using several different measures that differ in the extent to which they engage episodic or semantic memory. On two different versions of the Albert et al. (1979) remote memory battery M.R.L. displayed severe retrograde amnesia (RA) extending backwards in time for about 15 years with excellent preservation of older memories. With standard recall instructions his overall performance on the Crovitz test of autobiographical memory was impaired and all of M.R.L.'s specific, temporally dated memories were given from the first half of his life. When asked to reconstruct his past residential history in detail, M.R.L. provide specific and generally accurate information for residences occupied from his boyhood until 1970, but thereafter his memory became quite unreliable. On a test of knowledge of terms commonly employed in the surveying profession, in which he worked for the past 20 years, M.R.L.'s performance was also impaired. The consistent pattern of RA displayed by this patient on all of the tests of remote memory indicates that both episodic and semantic memory are impaired in amnesia.

Precision spectral manipulation of optical pulses using a coherent photon echo memory.

PubMed

Buchler, B C; Hosseini, M; Hétet, G; Sparkes, B M; Lam, P K

2010-04-01

Photon echo schemes are excellent candidates for high efficiency coherent optical memory. They are capable of high-bandwidth multipulse storage, pulse resequencing and have been shown theoretically to be compatible with quantum information applications. One particular photon echo scheme is the gradient echo memory (GEM). In this system, an atomic frequency gradient is induced in the direction of light propagation leading to a Fourier decomposition of the optical spectrum along the length of the storage medium. This Fourier encoding allows precision spectral manipulation of the stored light. In this Letter, we show frequency shifting, spectral compression, spectral splitting, and fine dispersion control of optical pulses using GEM.

Integrating ecology, psychology and neurobiology within a food-hoarding paradigm

PubMed Central

Pravosudov, Vladimir V.; Smulders, Tom V.

2010-01-01

Many animals regularly hoard food for future use, which appears to be an important adaptation to a seasonally and/or unpredictably changing environment. This food-hoarding paradigm is an excellent example of a natural system that has broadly influenced both theoretical and empirical work in the field of biology. The food-hoarding paradigm has played a major role in the conceptual framework of numerous fields from ecology (e.g. plant–animal interactions) and evolution (e.g. the coevolution of caching, spatial memory and the hippocampus) to psychology (e.g. memory and cognition) and neurobiology (e.g. neurogenesis and the neurobiology of learning and memory). Many food-hoarding animals retrieve caches by using spatial memory. This memory-based behavioural system has the inherent advantage of being tractable for study in both the field and laboratory and has been shaped by natural selection, which produces variation with strong fitness consequences in a variety of taxa. Thus, food hoarding is an excellent model for a highly integrative approach to understanding numerous questions across a variety of disciplines. Recently, there has been a surge of interest in the complexity of animal cognition such as future planning and episodic-like-memory as well as in the relationship between memory, the environment and the brain. In addition, new breakthroughs in neurobiology have enhanced our ability to address the mechanisms underlying these behaviours. Consequently, the field is necessarily becoming more integrative by assessing behavioural questions in the context of natural ecological systems and by addressing mechanisms through neurobiology and psychology, but, importantly, within an evolutionary and ecological framework. In this issue, we aim to bring together a series of papers providing a modern synthesis of ecology, psychology, physiology and neurobiology and identifying new directions and developments in the use of food-hoarding animals as a model system. PMID:20156812

Memory for temporally dynamic scenes.

PubMed

Ferguson, Ryan; Homa, Donald; Ellis, Derek

2017-07-01

Recognition memory was investigated for individual frames extracted from temporally continuous, visually rich film segments of 5-15 min. Participants viewed a short clip from a film in either a coherent or a jumbled order, followed by a recognition test of studied frames. Foils came either from an earlier or a later part of the film (Experiment 1) or from deleted segments selected from random cuts of varying duration (0.5 to 30 s) within the film itself (Experiment 2). When the foils came from an earlier or later part of the film (Experiment 1), recognition was excellent, with the hit rate far exceeding the false-alarm rate (.78 vs. 18). In Experiment 2, recognition was far worse, with the hit rate (.76) exceeding the false-alarm rate only for foils drawn from the longest cuts (15 and 30 s) and matching the false-alarm rate for the 5 s segments. When the foils were drawn from the briefest cuts (0.5 and 1.0 s), the false-alarm rate exceeded the hit rate. Unexpectedly, jumbling had no effect on recognition in either experiment. These results are consistent with the view that memory for complex visually temporal events is excellent, with the integrity unperturbed by disruption of the global structure of the visual stream. Disruption of memory was observed only when foils were drawn from embedded segments of duration less than 5 s, an outcome consistent with the view that memory at these shortest durations are consolidated with expectations drawn from the previous stream.

Does retrieval intentionality really matter? Similarities and differences between involuntary memories and directly and generatively retrieved voluntary memories.

PubMed

Barzykowski, Krystian; Staugaard, Søren Risløv

2016-08-01

Theories of autobiographical memory distinguish between involuntary and voluntary retrieval as a consequence of conscious intention (i.e., wanting to remember). Another distinction can be made between direct and generative retrieval, which reflects the effort involved (i.e., trying to remember). However, it is unclear how intention and effort interacts. For example, involuntary memories and directly retrieved memories have been used interchangeably in the literature to refer to the same phenomenon of effortless, non-strategic retrieval. More recent theoretical advances suggest that they are separate types of retrieval, one unintentional (involuntary), another intentional and effortless (direct voluntary retrieval), and a third intentional and effortful (generative voluntary retrieval). Whether this also entails differing phenomenological characteristics, such as vividness, rehearsal, or emotional valence, has not been previously investigated. In the current study, participants reported memories in an experimental paradigm designed to elicit voluntary and involuntary memories and rated them on a number of characteristics. If intention affects the retrieval process, then we should expect differences between the characteristics of involuntary and directly retrieved memories. The results imply that retrieval intention seems to differentiate how a memory appears in a person's mind. Furthermore, we argue that these differences in part could result from differences in encoding and consolidation. © 2015 The British Psychological Society.

Adaptive memory: the comparative value of survival processing.

PubMed

Nairne, James S; Pandeirada, Josefa N S; Thompson, Sarah R

2008-02-01

We recently proposed that human memory systems are "tuned" to remember information that is processed for survival, perhaps as a result of fitness advantages accrued in the ancestral past. This proposal was supported by experiments in which participants showed superior memory when words were rated for survival relevance, at least relative to when words received other forms of deep processing. The current experiments tested the mettle of survival memory by pitting survival processing against conditions that are universally accepted as producing excellent retention, including conditions in which participants rated words for imagery, pleasantness, and self-reference; participants also generated words, studied words with the intention of learning them, or rated words for relevance to a contextually rich (but non-survival-related) scenario. Survival processing yielded the best retention, which suggests that it may be one of the best encoding procedures yet discovered in the memory field.

Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer multilayer dielectric

NASA Astrophysics Data System (ADS)

Chen, Ying-Chih; Su, Yan-Kuin; Yu, Hsin-Chieh; Huang, Chun-Yuan; Huang, Tsung-Syun

2011-10-01

A wide hysteresis width characteristic (memory window) was observed in the organic thin film transistors (OTFTs) using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer multilayers. In this study, a strong memory effect was also found in the pentacene-based OTFTs and the electric characteristics were improved by introducing PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA trilayer to replace the conventional PHEMA monolayer or PMMA/PHEMA and PHEMA/PMMA bilayer as the dielectric layers of OTFTs. The memory effect was originated from the electron trapping and slow polarization of the dielectrics. The hydroxyl (-OH) groups inside the polymer dielectric were the main charge storage sites of the electrons. This charge-storage phenomenon could lead to a wide flat-band voltage shift (memory window, △VFB = 22 V) which is essential for the OTFTs' memory-related applications. Moreover, the fabricated transistors also exhibited significant switchable channel current due to the charge-storage and slow charge relaxation.

High-order hydrodynamic algorithms for exascale computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morgan, Nathaniel Ray

Hydrodynamic algorithms are at the core of many laboratory missions ranging from simulating ICF implosions to climate modeling. The hydrodynamic algorithms commonly employed at the laboratory and in industry (1) typically lack requisite accuracy for complex multi- material vortical flows and (2) are not well suited for exascale computing due to poor data locality and poor FLOP/memory ratios. Exascale computing requires advances in both computer science and numerical algorithms. We propose to research the second requirement and create a new high-order hydrodynamic algorithm that has superior accuracy, excellent data locality, and excellent FLOP/memory ratios. This proposal will impact a broadmore » range of research areas including numerical theory, discrete mathematics, vorticity evolution, gas dynamics, interface instability evolution, turbulent flows, fluid dynamics and shock driven flows. If successful, the proposed research has the potential to radically transform simulation capabilities and help position the laboratory for computing at the exascale.« less

Effective thermo-mechanical properties and shape memory effect of CNT/SMP composites

NASA Astrophysics Data System (ADS)

Yang, Qingsheng; Liu, Xia; Leng, Fangfang

2009-07-01

Shape memory polymer (SMP) has been applied in many fields as intelligent sensors and actuators. In order to improve the mechanical properties and recovery force of SMP, the addition of minor amounts of carbon nanotubes (CNT) into SMP has attracted wide attention. A micromechanical model and thermo-mechanical properties of CNT/SMP composites were studied in this paper. The thermo-mechanical constitutive relation of intellectual composites with isotropic and transversely isotropic CNT was obtained. Moreover, the shape memory effect of CNT/SMP composites and the effect of temperature and the volume fraction of CNT were discussed. The work shows that CNT/SMP composites exhibit excellent macroscopic thermo-mechanical properties and shape memory effect, while both of them can be affected remarkably by temperature and the microstructure parameters.

[The contribution of patient H.M. to modern neuroscience].

PubMed

Kawachi, Juro

2013-08-01

In 1953, 27-year-old H.M. underwent bilateral medial temporal lobes resection to control his seizures; however, he suffered from severe amnesia as a result. For the next five decades until his death in December 2008 at the age 82, he was the subject of numerous studies performed by over 100 investigators. The reason why research on H.M. continued for so long is mostly attributed to the efficient organization of excellent researchers. The principal findings of H.M. study encouraged the concept of medial temporal lobe memory system and multiple memory systems, and suggested the slow acquisition of semantic knowledge without medial temporal lobe memory system through repeated experience. By the grace of H.M.'s lifelong contribution, the neuroscience of memory is in full flourish.

Coherent spin control of a nanocavity-enhanced qubit in diamond

DOE PAGES

Li, Luozhou; Lu, Ming; Schroder, Tim; ...

2015-01-28

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy nanocavity systems in strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 µs using a silicon hard-mask fabrication process. This spin-photon interfacemore » is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.« less

NIH Toolbox Cognition Battery (NIHTB-CB): list sorting test to measure working memory.

PubMed

Tulsky, David S; Carlozzi, Noelle; Chiaravalloti, Nancy D; Beaumont, Jennifer L; Kisala, Pamela A; Mungas, Dan; Conway, Kevin; Gershon, Richard

2014-07-01

The List Sorting Working Memory Test was designed to assess working memory (WM) as part of the NIH Toolbox Cognition Battery. List Sorting is a sequencing task requiring children and adults to sort and sequence stimuli that are presented visually and auditorily. Validation data are presented for 268 participants ages 20 to 85 years. A subset of participants (N=89) was retested 7 to 21 days later. As expected, the List Sorting Test had moderately high correlations with other measures of working memory and executive functioning (convergent validity) but a low correlation with a test of receptive vocabulary (discriminant validity). Furthermore, List Sorting demonstrates expected changes over the age span and has excellent test-retest reliability. Collectively, these results provide initial support for the construct validity of the List Sorting Working Memory Measure as a measure of working memory. However, the relationship between the List Sorting Test and general executive function has yet to be determined.

Spatial But Not Oculomotor Information Biases Perceptual Memory: Evidence From Face Perception and Cognitive Modeling.

PubMed

Wantz, Andrea L; Lobmaier, Janek S; Mast, Fred W; Senn, Walter

2017-08-01

Recent research put forward the hypothesis that eye movements are integrated in memory representations and are reactivated when later recalled. However, "looking back to nothing" during recall might be a consequence of spatial memory retrieval. Here, we aimed at distinguishing between the effect of spatial and oculomotor information on perceptual memory. Participants' task was to judge whether a morph looked rather like the first or second previously presented face. Crucially, faces and morphs were presented in a way that the morph reactivated oculomotor and/or spatial information associated with one of the previously encoded faces. Perceptual face memory was largely influenced by these manipulations. We considered a simple computational model with an excellent match (4.3% error) that expresses these biases as a linear combination of recency, saccade, and location. Surprisingly, saccades did not play a role. The results suggest that spatial and temporal rather than oculomotor information biases perceptual face memory. Copyright © 2016 Cognitive Science Society, Inc.

NIH Toolbox Cognition Battery (NIHTB-CB): The List Sorting Test to Measure Working Memory

PubMed Central

Tulsky, David S.; Carlozzi, Noelle; Chiaravalloti, Nancy D.; Beaumont, Jennifer L.; Kisala, Pamela A.; Mungas, Dan; Conway, Kevin; Gershon, Richard

2015-01-01

The List Sorting Working Memory Test was designed to assess working memory (WM) as part of the NIH Toolbox Cognition Battery. List Sorting is a sequencing task requiring children and adults to sort and sequence stimuli that are presented visually and auditorily. Validation data are presented for 268 participants ages 20 to 85 years. A subset of participants (N=89) was retested 7 to 21 days later. As expected, the List Sorting Test had moderately high correlations with other measures of working memory and executive functioning (convergent validity) but a low correlation with a test of receptive vocabulary (discriminant validity). Furthermore, List Sorting demonstrates expected changes over the age span and has excellent test-retest reliability. Collectively, these results provide initial support the construct validity of the List Sorting Working Memory Measure as a measure of working memory. However, the relation between the List Sorting Test and general executive function has yet to be determined. PMID:24959983

Covert retrieval in working memory impacts the phenomenological characteristics remembered during episodic memory.

PubMed

Loaiza, Vanessa M; Borovanska, Borislava M

2018-01-01

Much research has investigated the qualitative experience of retrieving events from episodic memory (EM). The present study investigated whether covert retrieval in WM increases the phenomenological characteristics that participants find memorable in EM using tasks that distract attention from the maintenance of memoranda (i.e., complex span; Experiment 1) relative to tasks that do not (i.e., short or long list lengths of simple span; Experiments 1 and 2). Participants rated the quality of the phonological, semantic, and temporal-contextual characteristics remembered during a delayed memory characteristics questionnaire (MCQ). Whereas an advantage of the complex over simple span items was observed for each characteristic (Experiment 1), no such difference was observed between short and long trials of simple span (Experiment 2). These results are consistent with the view that covert retrieval in WM promotes content-context bindings that are later accessible from EM for both objective performance and subjective details of the remembered information. Copyright © 2017 Elsevier Inc. All rights reserved.

An efficient route to fabricate fatigue-free P(VDF-TrFE) capacitors with enhanced piezoelectric and ferroelectric properties and excellent thermal stability for sensing and memory applications.

PubMed

Singh, Deepa; Deepak; Garg, Ashish

2017-03-15

P(VDF-TrFE), the best known ferroelectric polymer, suffers from a rather low piezoelectric response as well as poor electrical fatigue life, hampering its application potential. Herein, we report the fabrication of fatigue free poly(vinylidenedifluoride-trifluoroethylene) P(VDF-TrFE)-based capacitors with record piezoelectric coefficients and excellent thermal stability. We proposed a cost-effective and simple solution-based process to fabricate P(VDF-TrFE)-based memory capacitors with large polarization (8.9 μC cm -2 ), low voltage operation (15 V), and excellent fatigue endurance with 100% polarization retention up to 10 8 electrical switching cycles. The thin film capacitors fabricated using methyl ethyl ketone (MEK) and dimethyl sulfoxide (DMSO) as co-solvents also show a much higher piezoelectric coefficient (d 33 = -60 pm V -1 ) than the previously reported capacitors and are also thermally stable up to 380 K, making them ideal candidates for ferro-, piezo-, and pyro-electric applications, even in devices operating above room temperature. The observed results are well supported by first principles calculations, FTIR, XPS, and evaluation of cohesion energy for crystallization by DSC.

Memory characteristics of metal-oxide-semiconductor structures based on Ge nanoclusters-embedded GeO(x) films grown at low temperature.

PubMed

Lin, Tzu-Shun; Lou, Li-Ren; Lee, Ching-Ting; Tsai, Tai-Cheng

2012-03-01

The memory devices constructed from the Ge-nanoclusters embedded GeO(x) layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

The applications and research progresses of nickel-titanium shape memory alloy in reconstructive surgery.

PubMed

Li, Qiang; Zeng, Yanjun; Tang, Xiaoying

2010-06-01

In spite of some good successes and excellent researches of nickel-titanium shape memory alloy (NiTi-SMA) in reconstructive surgery, there are still serious limitations to the clinical applications of NiTi alloy today. The potential leakage of elements and ions could be toxic to cells, tissues and organs. This review discussed the properties, clinical applications, corrosion performance, biocompatibility, the possible preventive measures to improve corrosion resistance by surface/structure modifications and the long-term challenges of using SMAs.

Inhibiting DNA methylation alters olfactory extinction but not acquisition learning in Apis cerana and Apis mellifera.

PubMed

Gong, Zhiwen; Wang, Chao; Nieh, James C; Tan, Ken

2016-07-01

DNA methylation plays a key role in invertebrate acquisition and extinction memory. Honey bees have excellent olfactory learning, but the role of DNA methylation in memory formation has, to date, only been studied in Apis mellifera. We inhibited DNA methylation by inhibiting DNA methyltransferase (DNMT) with zebularine (zeb) and studied the resulting effects upon olfactory acquisition and extinction memory in two honey bee species, Apis cerana and A. mellifera. We used the proboscis extension reflex (PER) assay to measure memory. We provide the first demonstration that DNA methylation is also important in the olfactory extinction learning of A. cerana. DNMT did not reduce acquisition learning in either species. However, zeb bidirectionally and differentially altered extinction learning in both species. In particular, zeb provided 1h before acquisition learning improved extinction memory retention in A. mellifera, but reduced extinction memory retention in A. cerana. The reasons for these differences are unclear, but provide a basis for future studies to explore species-specific differences in the effects of methylation on memory formation. Copyright © 2016 Elsevier Ltd. All rights reserved.

Cognitive Control Network Contributions to Memory-Guided Visual Attention.

PubMed

Rosen, Maya L; Stern, Chantal E; Michalka, Samantha W; Devaney, Kathryn J; Somers, David C

2016-05-01

Visual attentional capacity is severely limited, but humans excel in familiar visual contexts, in part because long-term memories guide efficient deployment of attention. To investigate the neural substrates that support memory-guided visual attention, we performed a set of functional MRI experiments that contrast long-term, memory-guided visuospatial attention with stimulus-guided visuospatial attention in a change detection task. Whereas the dorsal attention network was activated for both forms of attention, the cognitive control network(CCN) was preferentially activated during memory-guided attention. Three posterior nodes in the CCN, posterior precuneus, posterior callosal sulcus/mid-cingulate, and lateral intraparietal sulcus exhibited the greatest specificity for memory-guided attention. These 3 regions exhibit functional connectivity at rest, and we propose that they form a subnetwork within the broader CCN. Based on the task activation patterns, we conclude that the nodes of this subnetwork are preferentially recruited for long-term memory guidance of visuospatial attention. Published by Oxford University Press 2015. This work is written by (a) US Government employee(s) and is in the public domain in the US.

Effect of electrode material on characteristics of non-volatile resistive memory consisting of Ag{sub 2}S nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Jaewon, E-mail: j1jang@knu.ac.kr

2016-07-15

In this study, Ag{sub 2}S nanoparticles are synthesized and used as the active material for two-terminal resistance switching memory devices. Sintered Ag{sub 2}S films are successfully crystallized on plastic substrates with synthesized Ag{sub 2}S nanoparticles, after a relatively low-temperature sintering process (200 °C). After the sintering process, the crystallite size is increased from 6.8 nm to 80.3 nm. The high ratio of surface atoms to inner atoms of nanoparticles reduces the melting point temperature, deciding the sintering process temperature. In order to investigate the resistance switching characteristics, metal/Ag{sub 2}S/metal structures are fabricated and tested. The effect of the electrode materialmore » on the non-volatile resistive memory characteristics is studied. The bottom electrochemically inert materials, such as Au and Pt, were critical for maintaining stable memory characteristics. By using Au and Pt inert bottom electrodes, we are able to significantly improve the memory endurance and retention to more than 10{sup 3} cycles and 10{sup 4} sec, respectively.« less

Listening to nursing leaders: using national database of nursing quality indicators data to study excellence in nursing leadership.

PubMed

Anderson, Barbara Jo; Manno, Martin; O'Connor, Pricilla; Gallagher, Eileen

2010-04-01

There are varying and overlapping leadership characteristics that exemplify excellence in nursing leadership. To assess aspects of leadership that helps create a healthy work environment that supports nurses' provision of quality care at the bedside, the authors used a national survey instrument to examine the characteristics of nurse managers identified as excellent nurse leaders by their staff. The authors discuss their findings and a proposed theoretical model to explain specific nursing leadership characteristics that support staff nurse job satisfaction and retention.

A new JPEG-based steganographic algorithm for mobile devices

NASA Astrophysics Data System (ADS)

Agaian, Sos S.; Cherukuri, Ravindranath C.; Schneider, Erik C.; White, Gregory B.

2006-05-01

Currently, cellular phones constitute a significant portion of the global telecommunications market. Modern cellular phones offer sophisticated features such as Internet access, on-board cameras, and expandable memory which provide these devices with excellent multimedia capabilities. Because of the high volume of cellular traffic, as well as the ability of these devices to transmit nearly all forms of data. The need for an increased level of security in wireless communications is becoming a growing concern. Steganography could provide a solution to this important problem. In this article, we present a new algorithm for JPEG-compressed images which is applicable to mobile platforms. This algorithm embeds sensitive information into quantized discrete cosine transform coefficients obtained from the cover JPEG. These coefficients are rearranged based on certain statistical properties and the inherent processing and memory constraints of mobile devices. Based on the energy variation and block characteristics of the cover image, the sensitive data is hidden by using a switching embedding technique proposed in this article. The proposed system offers high capacity while simultaneously withstanding visual and statistical attacks. Based on simulation results, the proposed method demonstrates an improved retention of first-order statistics when compared to existing JPEG-based steganographic algorithms, while maintaining a capacity which is comparable to F5 for certain cover images.

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Lee, Bongmook; Misra, Veena

2015-10-01

In this work, a study has been performed to understand the gradual reset in Al2O3 resistive random-access memory (RRAM). Concentration of vacancies created during the forming or set operation is found to play a major role in the reset mechanism. The reset was observed to be gradual when a significantly higher number of vacancies are created in the dielectric during the set event. The vacancy concentration inside the dielectric was increased using a multi-step forming method which resulted in a diffusion-dominated gradual filament dissolution during the reset in Al2O3 RRAM. The gradual dissolution of the filament allows one to control the conductance of the dielectric during the reset. RRAM devices with gradual reset show excellent endurance and retention for multi-bit storage. Finally, the conductance modulation characteristics realizing synaptic learning are also confirmed in the RRAM.

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.

2014-04-01

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Correlates of the Gudjonsson Suggestibility Scale in delinquent adolescents.

PubMed

Muris, Peter; Meesters, Cor; Merckelbach, Harald

2004-02-01

Correlations between scores on the Gudjonsson Suggestibility Scale and a number of relevant personality characteristics, i.e., intelligence, memory, social inadequacy, social desirability, and fantasy proneness, were examined in a sample of 71 delinquent boys. Analysis showed that intelligence and memory were negatively related to suggestibility scores. That is, lower memory and intelligence were associated with higher suggestibility. No significant correlations were found between suggestibility and other personality characteristics.

Nonverbal working memory of humans and monkeys: rehearsal in the sketchpad?

NASA Technical Reports Server (NTRS)

Washburn, D. A.; Astur, R. S.; Rumbaugh, D. M. (Principal Investigator)

1998-01-01

Investigations of working memory tend to focus on the retention of verbal information. The present experiments were designed to characterize the active maintenance rehearsal process used in the retention of visuospatial information. Rhesus monkeys (Macaca mulatta; N = 6) were tested as well as humans (total N = 90) because these nonhuman primates have excellent visual working memory but, unlike humans, cannot verbally recode the stimuli to employ verbal rehearsal mechanisms. A series of experiments was conducted using a distractor-task paradigm, a directed forgetting procedure, and a dual-task paradigm. No evidence was found for an active maintenance process for either species. Rather, it appears that information is maintained in the visuospatial sketchpad without active rehearsal.

Spray forming of NiTi and NiTiPd shape-memory alloys

NASA Astrophysics Data System (ADS)

Smith, Ronald; Mabe, James; Ruggeri, Robert; Noebe, Ronald

2008-03-01

In the work to be presented, vacuum plasma spray forming has been used as a process to deposit and consolidate prealloyed NiTi and NiTiPd powders into near net shape actuators. Testing showed that excellent shape memory behavior could be developed in the deposited materials and the investigation proved that VPS forming could be a means to directly form a wide range of shape memory alloy components. The results of DSC characterization and actual actuation test results will be presented demonstrating the behavior of a Nitinol 55 alloy and a higher transition temperature NiTiPd alloy in the form of torque tube actuators that could be used in aircraft and aerospace controls.

Spray Forming of NiTi and NiTiPd Shape-Memory Alloys

NASA Technical Reports Server (NTRS)

Mabe, James; Ruggeri, Robert; Noebe, Ronald

2008-01-01

In the work to be presented, vacuum plasma spray forming has been used as a process to deposit and consolidate prealloyed NiTi and NiTiPd powders into near net shape actuators. Testing showed that excellent shape memory behavior could be developed in the deposited materials and the investigation proved that VPS forming could be a means to directly form a wide range of shape memory alloy components. The results of DSC characterization and actual actuation test results will be presented demonstrating the behavior of a Nitinol 55 alloy and a higher transition temperature NiTiPd alloy in the form of torque tube actuators that could be used in aircraft and aerospace controls.

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-07-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.

The roles of long-term phonotactic and lexical prosodic knowledge in phonological short-term memory.

PubMed

Tanida, Yuki; Ueno, Taiji; Lambon Ralph, Matthew A; Saito, Satoru

2015-04-01

Many previous studies have explored and confirmed the influence of long-term phonological representations on phonological short-term memory. In most investigations, phonological effects have been explored with respect to phonotactic constraints or frequency. If interaction between long-term memory and phonological short-term memory is a generalized principle, then other phonological characteristics-that is, suprasegmental aspects of phonology-should also exert similar effects on phonological short-term memory. We explored this hypothesis through three immediate serial-recall experiments that manipulated Japanese nonwords with respect to lexical prosody (pitch-accent type, reflecting suprasegmental characteristics) as well as phonotactic frequency (reflecting segmental characteristics). The results showed that phonotactic frequency affected the retention not only of the phonemic sequences, but also of pitch-accent patterns, when participants were instructed to recall both the phoneme sequence and accent pattern of nonwords. In addition, accent pattern typicality influenced the retention of the accent pattern: Typical accent patterns were recalled more accurately than atypical ones. These results indicate that both long-term phonotactic and lexical prosodic knowledge contribute to phonological short-term memory performance.

Polydopamine Particle-Filled Shape-Memory Polyurethane Composites with Fast Near-Infrared Light Responsibility.

PubMed

Yang, Li; Tong, Rui; Wang, Zhanhua; Xia, Hesheng

2018-03-25

A new kind of fast near-infrared (NIR) light-responsive shape-memory polymer composites was prepared by introducing polydopamine particles (PDAPs) into commercial shape-memory polyurethane (SMPU). The toughness and strength of the polydopamine-particle-filled polyurethane composites (SMPU-PDAPs) were significantly enhanced with the addition of PDAPs due to the strong interface interaction between PDAPs and polyurethane segments. Owing to the outstanding photothermal effect of PDAPs, the composites exhibit a rapid light-responsive shape-memory process in 60 s with a PDAPs content of 0.01 wt%. Due to the excellent dispersion and convenient preparation method, PDAPs have great potential to be used as high-efficiency and environmentally friendly fillers to obtain novel photoactive functional polymer composites. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of a monolithic ferrite memory array

NASA Technical Reports Server (NTRS)

Heckler, C. H., Jr.; Bhiwandker, N. C.

1972-01-01

The results of the development and testing of ferrite monolithic memory arrays are presented. This development required the synthesis of ferrite materials having special magnetic and physical characteristics and the development of special processes; (1) for making flexible sheets (laminae) of the ferrite composition, (2) for embedding conductors in ferrite, and (3) bonding ferrite laminae together to form a monolithic structure. Major problems encountered in each of these areas and their solutions are discussed. Twenty-two full-size arrays were fabricated and fired during the development of these processes. The majority of these arrays were tested for their memory characteristics as well as for their physical characteristics and the results are presented. The arrays produced during this program meet the essential goals and demonstrate the feasibility of fabricating monolithic ferrite memory arrays by the processes developed.

High-throughput state-machine replication using software transactional memory.

PubMed

Zhao, Wenbing; Yang, William; Zhang, Honglei; Yang, Jack; Luo, Xiong; Zhu, Yueqin; Yang, Mary; Luo, Chaomin

2016-11-01

State-machine replication is a common way of constructing general purpose fault tolerance systems. To ensure replica consistency, requests must be executed sequentially according to some total order at all non-faulty replicas. Unfortunately, this could severely limit the system throughput. This issue has been partially addressed by identifying non-conflicting requests based on application semantics and executing these requests concurrently. However, identifying and tracking non-conflicting requests require intimate knowledge of application design and implementation, and a custom fault tolerance solution developed for one application cannot be easily adopted by other applications. Software transactional memory offers a new way of constructing concurrent programs. In this article, we present the mechanisms needed to retrofit existing concurrency control algorithms designed for software transactional memory for state-machine replication. The main benefit for using software transactional memory in state-machine replication is that general purpose concurrency control mechanisms can be designed without deep knowledge of application semantics. As such, new fault tolerance systems based on state-machine replications with excellent throughput can be easily designed and maintained. In this article, we introduce three different concurrency control mechanisms for state-machine replication using software transactional memory, namely, ordered strong strict two-phase locking, conventional timestamp-based multiversion concurrency control, and speculative timestamp-based multiversion concurrency control. Our experiments show that speculative timestamp-based multiversion concurrency control mechanism has the best performance in all types of workload, the conventional timestamp-based multiversion concurrency control offers the worst performance due to high abort rate in the presence of even moderate contention between transactions. The ordered strong strict two-phase locking mechanism offers the simplest solution with excellent performance in low contention workload, and fairly good performance in high contention workload.

High-throughput state-machine replication using software transactional memory

PubMed Central

Yang, William; Zhang, Honglei; Yang, Jack; Luo, Xiong; Zhu, Yueqin; Yang, Mary; Luo, Chaomin

2017-01-01

State-machine replication is a common way of constructing general purpose fault tolerance systems. To ensure replica consistency, requests must be executed sequentially according to some total order at all non-faulty replicas. Unfortunately, this could severely limit the system throughput. This issue has been partially addressed by identifying non-conflicting requests based on application semantics and executing these requests concurrently. However, identifying and tracking non-conflicting requests require intimate knowledge of application design and implementation, and a custom fault tolerance solution developed for one application cannot be easily adopted by other applications. Software transactional memory offers a new way of constructing concurrent programs. In this article, we present the mechanisms needed to retrofit existing concurrency control algorithms designed for software transactional memory for state-machine replication. The main benefit for using software transactional memory in state-machine replication is that general purpose concurrency control mechanisms can be designed without deep knowledge of application semantics. As such, new fault tolerance systems based on state-machine replications with excellent throughput can be easily designed and maintained. In this article, we introduce three different concurrency control mechanisms for state-machine replication using software transactional memory, namely, ordered strong strict two-phase locking, conventional timestamp-based multiversion concurrency control, and speculative timestamp-based multiversion concurrency control. Our experiments show that speculative timestamp-based multiversion concurrency control mechanism has the best performance in all types of workload, the conventional timestamp-based multiversion concurrency control offers the worst performance due to high abort rate in the presence of even moderate contention between transactions. The ordered strong strict two-phase locking mechanism offers the simplest solution with excellent performance in low contention workload, and fairly good performance in high contention workload. PMID:29075049

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

PubMed

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

Taking It to the Next Level: Components of Excellent Secondary Educators.

ERIC Educational Resources Information Center

Zarra, Ernest J., III

This paper addresses what makes an excellent secondary school teacher, what training should occur for potential secondary school teachers to enable classroom excellence, what characteristics define such excellence, and whether excellence is learned or is the product of a particular predisposition, or both. It begins by explaining how excellent…

Appearance-Based Inferences Bias Source Memory

PubMed Central

Cassidy, Brittany S.; Zebrowitz, Leslie A.; Gutchess, Angela H.

2012-01-01

Previous research varying the trustworthiness of appearance has demonstrated that facial characteristics contribute to source memory. Two studies extended this work by investigating the contribution to source memory of babyfaceness, a facial quality known to elicit strong spontaneous trait inferences. Young adult participants viewed younger and older babyfaced and mature-faced individuals paired with sentences that were either congruent or incongruent with the target's facial characteristics. Identifying a source as dominant or submissive was least accurate when participants chose between a target whose behavior was incongruent with facial characteristics and a lure whose face mismatched the target in appearance, but matched the source memory question. In Study 1, this effect held true when identifying older sources, but not own-age, younger sources. When task difficulty was increased in Study 2, the relationship between face-behavior congruence and lure facial characteristics persisted, but it was not moderated by target age even though participants continued to correctly identify fewer older than younger sources. Taken together, these results indicate that trait expectations associated with variations in facial maturity can bias source memory for both own- and other-age faces, although own-age faces are less vulnerable to this bias, as shown in the moderation by task difficulty. PMID:22806429

Leading Others Toward Excellence.

PubMed

Hupp, James R

2015-12-01

This essay puts forth the proposition that academic program excellence does not arise by accident. Effective leadership is required. To support this proposition, the essay discusses the characteristics common to effective leaders. It then proceeds to use the example of a successful academic oral-maxillofacial surgery department and characteristics of its leader to provide evidence that excellence derives from effective leadership. Copyright © 2015 American Association of Oral and Maxillofacial Surgeons. Published by Elsevier Inc. All rights reserved.

The relationship between sustained inattentional blindness and working memory capacity.

PubMed

Beanland, Vanessa; Chan, Esther Hiu Chung

2016-04-01

Inattentional blindness, whereby observers fail to detect unexpected stimuli, has been robustly demonstrated in a range of situations. Originally research focused primarily on how stimulus characteristics and task demands affect inattentional blindness, but increasingly studies are exploring the influence of observer characteristics on the detection of unexpected stimuli. It has been proposed that individual differences in working memory capacity predict inattentional blindness, on the assumption that higher working memory capacity confers greater attentional capacity for processing unexpected stimuli. Unfortunately, empirical investigations of the association between inattentional blindness and working memory capacity have produced conflicting findings. To help clarify this relationship, we examined the relationship between inattentional blindness and working memory capacity in two samples (Ns = 195, 147) of young adults. We used three common variants of sustained inattentional blindness tasks, systematically manipulating the salience of the unexpected stimulus and primary task practice. Working memory capacity, measured by automated operation span (both Experiments 1 & 2) and N-back (Experiment 1 only) tasks, did not predict detection of the unexpected stimulus in any of the inattentional blindness tasks tested. Together with previous research, this undermines claims that there is a robust relationship between inattentional blindness and working memory capacity. Rather, it appears that any relationship between inattentional blindness and working memory is either too small to have practical significance or is moderated by other factors and consequently varies with attributes such as the sample characteristics within a given study.

Super-Memorizers Are Not Super-Recognizers

PubMed Central

Ramon, Meike; Miellet, Sebastien; Dzieciol, Anna M.; Konrad, Boris Nikolai

2016-01-01

Humans have a natural expertise in recognizing faces. However, the nature of the interaction between this critical visual biological skill and memory is yet unclear. Here, we had the unique opportunity to test two individuals who have had exceptional success in the World Memory Championships, including several world records in face-name association memory. We designed a range of face processing tasks to determine whether superior/expert face memory skills are associated with distinctive perceptual strategies for processing faces. Superior memorizers excelled at tasks involving associative face-name learning. Nevertheless, they were as impaired as controls in tasks probing the efficiency of the face system: face inversion and the other-race effect. Super memorizers did not show increased hippocampal volumes, and exhibited optimal generic eye movement strategies when they performed complex multi-item face-name associations. Our data show that the visual computations of the face system are not malleable and are robust to acquired expertise involving extensive training of associative memory. PMID:27008627

Super-Memorizers Are Not Super-Recognizers.

PubMed

Ramon, Meike; Miellet, Sebastien; Dzieciol, Anna M; Konrad, Boris Nikolai; Dresler, Martin; Caldara, Roberto

2016-01-01

Humans have a natural expertise in recognizing faces. However, the nature of the interaction between this critical visual biological skill and memory is yet unclear. Here, we had the unique opportunity to test two individuals who have had exceptional success in the World Memory Championships, including several world records in face-name association memory. We designed a range of face processing tasks to determine whether superior/expert face memory skills are associated with distinctive perceptual strategies for processing faces. Superior memorizers excelled at tasks involving associative face-name learning. Nevertheless, they were as impaired as controls in tasks probing the efficiency of the face system: face inversion and the other-race effect. Super memorizers did not show increased hippocampal volumes, and exhibited optimal generic eye movement strategies when they performed complex multi-item face-name associations. Our data show that the visual computations of the face system are not malleable and are robust to acquired expertise involving extensive training of associative memory.

Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications

NASA Astrophysics Data System (ADS)

Tsao, Hou-Yen; Lin, Yow-Jon

2014-02-01

The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n+-Si), Au/pentacene/Si nanowires (SiNWs)/n+-Si, and Au/pentacene/H2O2-treated SiNWs/n+-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n+-Si devices show hysteresis behavior. H2O2 treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n+-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices.

Sub-1-V-60 nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell

NASA Astrophysics Data System (ADS)

Ogasawara, Ryosuke; Endoh, Tetsuo

2018-04-01

In this study, with the aim to achieve a wide noise margin and an excellent power delay product (PDP), a vertical body channel (BC)-MOSFET-based six-transistor (6T) static random access memory (SRAM) array is evaluated by changing the number of pillars in each part of a SRAM cell, that is, by changing the cell ratio in the SRAM cell. This 60 nm vertical BC-MOSFET-based 6T SRAM array realizes 0.84 V operation under the best PDP and up to 31% improvement of PDP compared with the 6T SRAM array based on a 90 nm planar MOSFET whose gate length and channel width are the same as those of the 60 nm vertical BC-MOSFET. Additionally, the vertical BC-MOSFET-based 6T SRAM array achieves an 8.8% wider read static noise margin (RSNM), a 16% wider write margin (WM), and an 89% smaller leakage. Moreover, it is shown that changing the cell ratio brings larger improvements of RSNM, WM, and write time in the vertical BC-MOSFET-based 6T SRAM array.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Characteristics of Positive Autobiographical Memories in Adulthood

ERIC Educational Resources Information Center

Bluck, Susan; Alea, Nicole

2009-01-01

The characteristics of positive autobiographical memory narratives were examined in younger and older adults. Narratives were content-coded for the extent to which they contained indicators of affect, sensory imagery, and cognition. Affect was additionally assessed through self-report. Young adults expressed more positive affect and less sensory…

A Memento of Complexity: The Rhetorics of Memory, Ambience, and Emergence

ERIC Educational Resources Information Center

Southergill, Glen T.

2014-01-01

Drawing from complexity theory, this dissertation develops a schema of rhetorical memory that exhibits extended characteristics. Scholars traditionally conceptualize memory, the fourth canon in classical rhetoric, as place (loci) or image (phantasm). However, memory rhetoric resists the traditional loci-phantasm framework and instead emerges from…

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

NASA Astrophysics Data System (ADS)

Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

2016-02-01

Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.

"Reality" of near-death-experience memories: evidence from a psychodynamic and electrophysiological integrated study.

PubMed

Palmieri, Arianna; Calvo, Vincenzo; Kleinbub, Johann R; Meconi, Federica; Marangoni, Matteo; Barilaro, Paolo; Broggio, Alice; Sambin, Marco; Sessa, Paola

2014-01-01

The nature of near-death-experiences (NDEs) is largely unknown but recent evidence suggests the intriguing possibility that NDEs may refer to actually "perceived," and stored, experiences (although not necessarily in relation to the external physical world). We adopted an integrated approach involving a hypnosis-based clinical protocol to improve recall and decrease memory inaccuracy together with electroencephalography (EEG) recording in order to investigate the characteristics of NDE memories and their neural markers compared to memories of both real and imagined events. We included 10 participants with NDEs, defined by the Greyson NDE scale, and 10 control subjects without NDE. Memories were assessed using the Memory Characteristics Questionnaire. Our hypnosis-based protocol increased the amount of details in the recall of all kind of memories considered (NDE, real, and imagined events). Findings showed that NDE memories were similar to real memories in terms of detail richness, self-referential, and emotional information. Moreover, NDE memories were significantly different from memories of imagined events. The pattern of EEG results indicated that real memory recall was positively associated with two memory-related frequency bands, i.e., high alpha and gamma. NDE memories were linked with theta band, a well-known marker of episodic memory. The recall of NDE memories was also related to delta band, which indexes processes such as the recollection of the past, as well as trance states, hallucinations, and other related portals to transpersonal experience. It is notable that the EEG pattern of correlations for NDE memory recall differed from the pattern for memories of imagined events. In conclusion, our findings suggest that, at a phenomenological level, NDE memories cannot be considered equivalent to imagined memories, and at a neural level, NDE memories are stored as episodic memories of events experienced in a peculiar state of consciousness.

Twin-bit via resistive random access memory in 16 nm FinFET logic technologies

NASA Astrophysics Data System (ADS)

Shih, Yi-Hong; Hsu, Meng-Yin; King, Ya-Chin; Lin, Chrong Jung

2018-04-01

A via resistive random access memory (RRAM) cell fully compatible with the standard CMOS logic process has been successfully demonstrated for high-density logic nonvolatile memory (NVM) modules in advanced FinFET circuits. In this new cell, the transition metal layers are formed on both sides of a via, given two storage bits per via. In addition to its compact cell area (1T + 14 nm × 32 nm), the twin-bit via RRAM cell features a low operation voltage, a large read window, good data retention, and excellent cycling capability. As fine alignments between mask layers become possible, the twin-bit via RRAM cell is expected to be highly scalable in advanced FinFET technology.

Crystallographic Characterization on Polycrystalline Ni-Mn-Ga Alloys with Strong Preferred Orientation.

PubMed

Li, Zongbin; Yang, Bo; Zou, Naifu; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zhao, Xiang; Zuo, Liang

2017-04-27

Heusler type Ni-Mn-Ga ferromagnetic shape memory alloys can demonstrate excellent magnetic shape memory effect in single crystals. However, such effect in polycrystalline alloys is greatly weakened due to the random distribution of crystallographic orientation. Microstructure optimization and texture control are of great significance and challenge to improve the functional behaviors of polycrystalline alloys. In this paper, we summarize our recent progress on the microstructure control in polycrystalline Ni-Mn-Ga alloys in the form of bulk alloys, melt-spun ribbons and thin films, based on the detailed crystallographic characterizations through neutron diffraction, X-ray diffraction and electron backscatter diffraction. The presented results are expected to offer some guidelines for the microstructure modification and functional performance control of ferromagnetic shape memory alloys.

Artificial Induction of Associative Olfactory Memory by Optogenetic and Thermogenetic Activation of Olfactory Sensory Neurons and Octopaminergic Neurons in Drosophila Larvae

PubMed Central

Honda, Takato; Lee, Chi-Yu; Honjo, Ken; Furukubo-Tokunaga, Katsuo

2016-01-01

The larval brain of Drosophila melanogaster provides an excellent system for the study of the neurocircuitry mechanism of memory. Recent development of neurogenetic techniques in fruit flies enables manipulations of neuronal activities in freely behaving animals. This protocol describes detailed steps for artificial induction of olfactory associative memory in Drosophila larvae. In this protocol, the natural reward signal is substituted by thermogenetic activation of octopaminergic neurons in the brain. In parallel, the odor signal is substituted by optogenetic activation of a specific class of olfactory receptor neurons. Association of reward and odor stimuli is achieved with the concomitant application of blue light and heat that leads to activation of both sets of neurons in living transgenic larvae. Given its operational simplicity and robustness, this method could be utilized to further our knowledge on the neurocircuitry mechanism of memory in the fly brain. PMID:27445732

Sensitive maintenance: a cognitive process underlying individual differences in memory for threatening information.

PubMed

Peters, Jan H; Hock, Michael; Krohne, Heinz Walter

2012-01-01

Dispositional styles of coping with threat influence memory for threatening information. In particular, sensitizers excel over repressors in their memory for threatening information after long retention intervals, but not after short ones. We therefore suggested that sensitizers, but not repressors, employ active maintenance processes during the retention interval to selectively retain threatening material. Sensitive maintenance was studied in 2 experiments in which participants were briefly exposed to threatening and nonthreatening pictures (Experiment 1, N = 128) or words (Experiment 2, N = 145). Following, we administered unannounced recognition tests before and after an intervening task that generated either high or low cognitive load, assuming that high cognitive load would impede sensitizers' memory maintenance of threatening material. Supporting our hypotheses, the same pattern of results was obtained in both experiments: Under low cognitive load, sensitizers forgot less threat material than repressors did; no such differences were observed under high cognitive load.

What does a patient with semantic dementia remember in verbal short-term memory? Order and sound but not words.

PubMed

Majerus, Steve; Norris, Dennis; Patterson, Karalyn

2007-03-01

In this study, we explored capacities for three different aspects of short-term verbal memory in patients with semantic dementia. As expected, the two patients had poor recall for lexico-semantic item information, as assessed by immediate serial recall of word lists. In contrast, their short-term memory for phonological information was preserved, as evidenced by normal performance for immediate serial recall of nonword lists, with normal or increased nonword phonotactic-frequency effects, and increased sensitivity to phonological lures in a delayed probe recognition task. Furthermore, the patients appeared to have excellent memory for the serial order of the words in a list. These data provide further support for the proposal that language knowledge is a major determining factor of verbal STM capacity, but they also highlight the necessary distinction of processes involved in item and order recall, as proposed by recent models of STM.

High Storage Efficiency and Large Fractional Delay of EIT-Based Memory

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite

2013-05-01

In long-distance quantum communication and optical quantum computation, an efficient and long-lived quantum memory is an important component. We first experimentally demonstrated that a time-space-reversing method plus the optimum pulse shape can improve the storage efficiency (SE) of light pulses to 78% in cold media based on the effect of electromagnetically induced transparency (EIT). We obtain a large fractional delay of 74 at 50% SE, which is the best record so far. The measured classical fidelity of the recalled pulse is higher than 90% and nearly independent of the storage time, implying that the optical memory maintains excellent phase coherence. Our results suggest the current result may be readily applied to single-photon quantum states due to quantum nature of the EIT light-matter inference. This study advances the EIT-based quantum memory in practical quantum information applications.

Runge-Kutta Methods for Linear Ordinary Differential Equations

NASA Technical Reports Server (NTRS)

Zingg, David W.; Chisholm, Todd T.

1997-01-01

Three new Runge-Kutta methods are presented for numerical integration of systems of linear inhomogeneous ordinary differential equations (ODES) with constant coefficients. Such ODEs arise in the numerical solution of the partial differential equations governing linear wave phenomena. The restriction to linear ODEs with constant coefficients reduces the number of conditions which the coefficients of the Runge-Kutta method must satisfy. This freedom is used to develop methods which are more efficient than conventional Runge-Kutta methods. A fourth-order method is presented which uses only two memory locations per dependent variable, while the classical fourth-order Runge-Kutta method uses three. This method is an excellent choice for simulations of linear wave phenomena if memory is a primary concern. In addition, fifth- and sixth-order methods are presented which require five and six stages, respectively, one fewer than their conventional counterparts, and are therefore more efficient. These methods are an excellent option for use with high-order spatial discretizations.

Operating Characteristics of the Implicit Learning System Supporting Serial Interception Sequence Learning

ERIC Educational Resources Information Center

Sanchez, Daniel J.; Reber, Paul J.

2012-01-01

The memory system that supports implicit perceptual-motor sequence learning relies on brain regions that operate separately from the explicit, medial temporal lobe memory system. The implicit learning system therefore likely has distinct operating characteristics and information processing constraints. To attempt to identify the limits of the…

Older adults with poor self-rated memory have less depressive symptoms and better memory performance when perceived self-efficacy is high.

PubMed

O'Shea, Deirdre M; Dotson, Vonetta M; Fieo, Robert A; Tsapanou, Angeliki; Zahodne, Laura; Stern, Yaakov

2016-07-01

To investigate whether self-efficacy moderates the association between self-rated memory and depressive symptoms in a large sample of older adults. The influence of self-efficacy and depressive symptoms on memory performance was also examined in a subsample of individuals who reported poor memory. Non-demented participants (n = 3766) were selected from the 2012 wave of the Health and Retirement Study. Depressive symptomatology was assessed with the 8-item Center for Epidemiologic Studies Depression Scale. A modified version of the Midlife Developmental Inventory Questionnaire was used as the measure of self-efficacy. Participants were asked to rate their memory presently on a five-point scale from Excellent (1) to Poor (5). Immediate memory and delayed memory (after a 5-min interval) were measured by the number of correct words recalled from a 10-item word list. Multiple regression analyses revealed that negative ratings of memory were significantly associated with greater levels of depressive symptoms, with this effect being greatest in those with low levels of self-efficacy. Additionally, greater self-efficacy was associated with optimal objective memory performances but only when depressive symptoms were low in individuals who reported poor memory function (n = 1196). Self-efficacy moderates the relationship between self-rated memory function and depressive symptoms. Higher self-efficacy may buffer against the impact of subjective memory difficulty on one's mood and thereby mitigating the effect of depressive symptoms on memory. Interventions should focus on increasing perceived self-efficacy in older adults reporting poor memory function to potentially minimize memory impairment. Copyright © 2015 John Wiley & Sons, Ltd.

An Ideal Observer Analysis of Visual Working Memory

PubMed Central

Sims, Chris R.; Jacobs, Robert A.; Knill, David C.

2013-01-01

Limits in visual working memory (VWM) strongly constrain human performance across many tasks. However, the nature of these limits is not well understood. In this paper we develop an ideal observer analysis of human visual working memory, by deriving the expected behavior of an optimally performing, but limited-capacity memory system. This analysis is framed around rate–distortion theory, a branch of information theory that provides optimal bounds on the accuracy of information transmission subject to a fixed information capacity. The result of the ideal observer analysis is a theoretical framework that provides a task-independent and quantitative definition of visual memory capacity and yields novel predictions regarding human performance. These predictions are subsequently evaluated and confirmed in two empirical studies. Further, the framework is general enough to allow the specification and testing of alternative models of visual memory (for example, how capacity is distributed across multiple items). We demonstrate that a simple model developed on the basis of the ideal observer analysis—one which allows variability in the number of stored memory representations, but does not assume the presence of a fixed item limit—provides an excellent account of the empirical data, and further offers a principled re-interpretation of existing models of visual working memory. PMID:22946744

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Kim, Sungmin; Seo, David H.; Seo, Sunae; Won Kang, Tae; Wang, Kang L.

2012-01-01

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ˜4.5 V for the Ti-gate device and ˜9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

Fungal mediated innate immune memory, what have we learned?

PubMed

Quintin, Jessica

2018-05-30

The binary classification of mammalian immune memory is now obsolete. Innate immune cells carry memory characteristics. The overall capacity of innate immune cells to remember and alter their responses is referred as innate immune memory and the induction of a non-specific memory resulting in an enhanced immune status is termed "trained immunity". Historically, trained immunity was first described as triggered by the human fungal pathogen Candida albicans. Since, numerous studies have accumulated and deciphered the main characteristics of trained immunity mediated by fungi and fungal components. This review aims at presenting the newly described aspect of memory in innate immunity with an emphasis on the historically fungal mediated one, covering the known molecular mechanisms associated with training. In addition, the review uncovers the numerous non-specific effect that β-glucans trigger in the context of infectious diseases and septicaemia, inflammatory diseases and cancer. Copyright © 2018. Published by Elsevier Ltd.

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; Bailey, Mark; Ho, Fat Duen

2004-01-01

The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

Impacts of Co doping on ZnO transparent switching memory device characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa; Prasad, Om Kumar

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnOmore » device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.« less

Temperature dependent characteristics of the random telegraph noise on contact resistive random access memory

NASA Astrophysics Data System (ADS)

Chang, Liang-Shun; Lin, Chrong Jung; King, Ya-Chin

2014-01-01

The temperature dependent characteristics of the random telegraphic noise (RTN) on contact resistive random access memory (CRRAM) are studied in this work. In addition to the bi-level switching, the occurrences of the middle states in the RTN signal are investigated. Based on the unique its temperature dependent characteristics, a new temperature sensing scheme is proposed for applications in ultra-low power sensor modules.

Latent constructs model explaining the attachment-linked variation in autobiographical remembering.

PubMed

Öner, Sezin; Gülgöz, Sami

2016-01-01

In the current study, we proposed a latent constructs model to characterise the qualitative aspects of autobiographical remembering and investigated the structural relations in the model that may vary across individuals. Primarily, we focused on the memories of romantic relationships and argued that attachment anxiety and avoidance would be reflected in the ways that individuals encode, rehearse, or remember autobiographical memories in close relationships. Participants reported two positive and two negative relationship-specific memories and rated the characteristics for each memory. As predicted, the basic memory model yielded appropriate fit, indicating that event characteristics (EC) predicted the frequency of rehearsal (RC) and phenomenology at retrieval (PC). When attachment variables were integrated, the model showed that rehearsal mediated the link between anxiety and PC, especially for negative memories. On the other hand, for avoidance EC was the key factor mediating the link between avoidance and RC, as well as PC. Findings were discussed with respect to autobiographical memory functions emphasising a systematically, integrated framework.

Cancer immunotherapy and immunological memory.

PubMed

Murata, Kenji; Tsukahara, Tomohide; Torigoe, Toshihiko

2016-01-01

Human immunological memory is the key distinguishing hallmark of the adaptive immune system and plays an important role in the prevention of morbidity and the severity of infection. The differentiation system of T cell memory has been clarified using mouse models. However, the human T cell memory system has great diversity induced by natural antigens derived from many pathogens and tumor cells throughout life, and profoundly differs from the mouse memory system constructed using artificial antigens and transgenic T cells. We believe that only human studies can elucidate the human immune system. The importance of immunological memory in cancer immunotherapy has been pointed out, and the trafficking properties and long-lasting anti-tumor capacity of memory T cells play a crucial role in the control of malignant tumors. Adoptive cell transfer of less differentiated T cells has consistently demonstrated superior anti-tumor capacity relative to more differentiated T cells. Therefore, a human T cell population with the characteristics of stem cell memory is thought to be attractive for peptide vaccination and adoptive cell transfer. A novel human memory T cell population that we have identified is closer to the naive state than previous memory T cells in the T cell differentiation lineage, and has the characteristics of stem-like chemoresistance. Here we introduce this novel population and describe the fundamentals of immunological memory in cancer immunotherapy.

Odor-induced recall of emotional memories in PTSD-Review and new paradigm for research.

PubMed

Daniels, Judith K; Vermetten, Eric

2016-10-01

It is clinically well known that olfactory intrusions in PTSD can be a disabling phenomena due to the involuntary recall of odor memories. Odorants can trigger involuntary recall of emotional memories as well have the potential to help diminishing emotional arousal as grounding stimuli. Despite major advances in our understanding of the function of olfactory system, the study of the relation of olfaction and emotional memory is still relatively scarce. Odor memory is long thought to be different than other types of memories such as verbal or visual memories, being more strongly engraved and more closely related to strong emotions. Brain areas mediating smell memory including orbitofrontal cortex and other parts of medial prefrontal cortex, hippocampus and amygdala, have been implicated in learning and memory and are part of a neural circuitry that is involved in PTSD. The olfactory cortex itself also plays an important role in emotional processing. Clinical observations support the notion that odor-evoked memories can play a role in the symptomatology of PTSD. This paper reviews a re-emerging body of science linking odor processing to emotional processing in PTSD using the calming and grounding effect of odors as well as the use of odors in augmented exposure therapy. This results in converging evidence that olfaction is an excellent model for studying many questions germane to the field of human emotional memory processing. Copyright © 2016 Elsevier Inc. All rights reserved.

The process and organizational characteristics of memory clinics in Israel in 2007.

PubMed

Werner, Perla; Goldstein, Dovrat; Heinik, Jeremia

2009-01-01

We previously described the characteristics and activities of 25 memory clinics in Israel in 1998 using a mail survey. Questionnaires assessing the administrative structure of the clinics, patient characteristics, processes and methods used, and outcomes of the assessment were mailed again in 2007 to 35 memory clinics. Overall, the general operating characteristics of the clinics in 2007 were found to be similar to those reported in the previous survey conducted in 1998. The assessment process in 2007 was shorter than in 1998 (mean time=1.92 and 3.12 h, respectively), although both surveys were based on an interdisciplinary team, including a physician, a nurse and a social worker. However, in 2007 the teams were more wide-ranging. A wider variety of instruments were reported in the more recent survey. Most of the clinics in both surveys reported that family members were involved at all stages of the assessment. Medication treatment was the main outcome reported by the clinics in both surveys. There has been a development in the process and organizational characteristics of memory clinics in Israel over the years, probably as a consequence of the development of knowledge in the area of cognitive deterioration.

Camera memory study for large space telescope. [charge coupled devices

NASA Technical Reports Server (NTRS)

Hoffman, C. P.; Brewer, J. E.; Brager, E. A.; Farnsworth, D. L.

1975-01-01

Specifications were developed for a memory system to be used as the storage media for camera detectors on the large space telescope (LST) satellite. Detectors with limited internal storage time such as intensities charge coupled devices and silicon intensified targets are implied. The general characteristics are reported of different approaches to the memory system with comparisons made within the guidelines set forth for the LST application. Priority ordering of comparisons is on the basis of cost, reliability, power, and physical characteristics. Specific rationales are provided for the rejection of unsuitable memory technologies. A recommended technology was selected and used to establish specifications for a breadboard memory. Procurement scheduling is provided for delivery of system breadboards in 1976, prototypes in 1978, and space qualified units in 1980.

Content Analysis of Memory and Memory-Related Research Studies on Children with Hearing Loss

ERIC Educational Resources Information Center

Dogan, Murat; Hasanoglu, Gülcihan

2016-01-01

Memory plays a profound role in explaining language development, academic learning, and learning disabilities. Even though there is a large body of research on language development, literacy skills, other academic skills, and intellectual characteristics of children with hearing loss, there is no holistic study on their memory processes.…

Implicit and Explicit Memory in Autism: Is Autism an Amnesic Disorder?

ERIC Educational Resources Information Center

Renner, Peggy; Klinger, Laura Grofer; Klinger, Mark R.

2000-01-01

This study examined whether children with high-functioning autism have a dissociation between explicit and implicit memory abilities characteristic of medial temporal lobe amnesic disorder. Children (N=14 and ages 6-14) with autism showed intact implicit and explicit memory abilities but did not show typical memory patterns, suggesting they used…

Metal-organic molecular device for non-volatile memory storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radha, B., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in; Sagade, Abhay A.; Kulkarni, G. U., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organicmore » complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.« less

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

NASA Astrophysics Data System (ADS)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

Modifying the Frequency and Characteristics of Involuntary Autobiographical Memories

PubMed Central

Vannucci, Manila; Batool, Iram; Pelagatti, Claudia; Mazzoni, Giuliana

2014-01-01

Recent studies have shown that involuntary autobiographical memories (IAMs) can be elicited in the laboratory. Here we assessed whether the specific instructions given to participants can change the nature of the IAMs reported, in terms of both their frequency and their characteristics. People were either made or not made aware that the aim of the study was to examine IAMs. They reported mental contents either whenever they became aware of them or following a predetermined schedule. Both making people aware of the aim of the study and following a fixed schedule of interruptions increased significantly the number of IAMs reported. When aware of the aim of the study, participants reported more specific memories that had been retrieved and rehearsed more often in the past. These findings demonstrate that the number and characteristics of memories depend on the procedure used. Explanations of these effects and their implications for research on IAMs are discussed. PMID:24717536

A Comprehensive Study on Energy Efficiency and Performance of Flash-based SSD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Seon-Yeon; Kim, Youngjae; Urgaonkar, Bhuvan

2011-01-01

Use of flash memory as a storage medium is becoming popular in diverse computing environments. However, because of differences in interface, flash memory requires a hard-disk-emulation layer, called FTL (flash translation layer). Although the FTL enables flash memory storages to replace conventional hard disks, it induces significant computational and space overhead. Despite the low power consumption of flash memory, this overhead leads to significant power consumption in an overall storage system. In this paper, we analyze the characteristics of flash-based storage devices from the viewpoint of power consumption and energy efficiency by using various methodologies. First, we utilize simulation tomore » investigate the interior operation of flash-based storage of flash-based storages. Subsequently, we measure the performance and energy efficiency of commodity flash-based SSDs by using microbenchmarks to identify the block-device level characteristics and macrobenchmarks to reveal their filesystem level characteristics.« less

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.

PubMed

Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok

2017-05-17

Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Generalized Hough Transform for Object Classification in the Maritime Domain

DTIC Science & Technology

2015-12-01

and memory storage problems of the GHT in this work . Neural networks have been used to provide excellent solutions to real-world problems in many...1 A. THESIS OBJECTIVE ...............................................................................1 B. RELATED WORK ...SIGNIFICANT CONTRIBUTIONS ......................................................47  B.  RECOMMENDATIONS FOR FUTURE WORK ................................48

Neuropsychological characteristics of child and adolescent offspring of patients with schizophrenia or bipolar disorder.

PubMed

de la Serna, Elena; Sugranyes, Gisela; Sanchez-Gistau, Vanessa; Rodriguez-Toscano, Elisa; Baeza, Immaculada; Vila, Montserrat; Romero, Soledad; Sanchez-Gutierrez, Teresa; Penzol, Mª José; Moreno, Dolores; Castro-Fornieles, Josefina

2017-05-01

Schizophrenia (SZ) and bipolar disorder (BD) are considered neurobiological disorders which share some clinical, cognitive and neuroimaging characteristics. Studying child and adolescent offspring of patients diagnosed with bipolar disorder (BDoff) or schizophrenia (SZoff) is regarded as a reliable method for investigating early alterations and vulnerability factors for these disorders. This study compares the neuropsychological characteristics of SZoff, BDoff and a community control offspring group (CC) with the aim of examining shared and differential cognitive characteristics among groups. 41 SZoff, 90 BDoff and 107 CC were recruited. They were all assessed with a complete neuropsychological battery which included intelligence quotient, working memory (WM), processing speed, verbal memory and learning, visual memory, executive functions and sustained attention. SZoff and BDoff showed worse performance in some cognitive areas compared with CC. Some of these difficulties (visual memory) were common to both offspring groups, whereas others, such as verbal learning and WM in SZoff or PSI in BDoff, were group-specific. The cognitive difficulties in visual memory shown by both the SZoff and BDoff groups might point to a common endophenotype in the two disorders. Difficulties in other cognitive functions would be specific depending on the family diagnosis. Copyright © 2016 Elsevier B.V. All rights reserved.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

NASA Astrophysics Data System (ADS)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

PubMed

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

2017-08-11

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

AC Electric Field Activated Shape Memory Polymer Composite

NASA Technical Reports Server (NTRS)

Kang, Jin Ho; Siochi, Emilie J.; Penner, Ronald K.; Turner, Travis L.

2011-01-01

Shape memory materials have drawn interest for applications like intelligent medical devices, deployable space structures and morphing structures. Compared to other shape memory materials like shape memory alloys (SMAs) or shape memory ceramics (SMCs), shape memory polymers (SMPs) have high elastic deformation that is amenable to tailored of mechanical properties, have lower density, and are easily processed. However, SMPs have low recovery stress and long response times. A new shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive fillers to enhance its thermo-mechanical characteristics. A new composition of shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive functionalized graphene sheets (FGS) to enhance its thermo-mechanical characteristics. The elastic modulus of LaRC-SMPC is approximately 2.7 GPa at room temperature and 4.3 MPa above its glass transition temperature. Conductive FGSs-doped LaRC-SMPC exhibited higher conductivity compared to pristine LaRC SMP. Applying an electric field at between 0.1 Hz and 1 kHz induced faster heating to activate the LaRC-SMPC s shape memory effect relative to applying DC electric field or AC electric field at frequencies exceeding1 kHz.

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

2013-07-01

Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Xu, Zong-Xiang; Roy, V. A. L.

2013-02-01

The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics.The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics. Electronic supplementary information (ESI) available: UV-vis spectrum of Au nanoparticle aqueous solution, transfer characteristics of the transistors without inserting an Au nanoparticle monolayer, AFM image of the pentacene layer, transfer characteristics at different program voltages and memory windows with respect to the P/E voltage. See DOI: 10.1039/c2nr32579a

Episodic Memory, Semantic Memory, and Fluency.

ERIC Educational Resources Information Center

Schaefer, Carl F.

1980-01-01

Suggests that creating a second-language semantic network can be conceived as developing a plan for retrieving second-language word forms. Characteristics of linguistic performance which will promote fluency are discussed in light of the distinction between episodic and semantic memory. (AMH)

Characteristics of color memory for natural scenes

NASA Astrophysics Data System (ADS)

Amano, Kinjiro; Uchikawa, Keiji; Kuriki, Ichiro

2002-08-01

To study the characteristics of color memory for natural images, a memory-identification task was performed with differing color contrasts; three of the contrasts were defined by chromatic and luminance components of the image, and the others were defined with respect to the categorical colors. After observing a series of pictures successively, subjects identified the pictures using a confidence rating. Detection of increased contrasts tended to be harder than detection of decreased contrasts, suggesting that the chromaticness of pictures is enhanced in memory. Detecting changes within each color category was more difficult than across the categories. A multiple mechanism that processes color differences and categorical colors is briefly considered. 2002 Optical Society of America

Memory Applications Using Resonant Tunneling Diodes

NASA Astrophysics Data System (ADS)

Shieh, Ming-Huei

Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

High Neuromagnetic Activation in the Left Prefrontal and Frontal Cortices Correlates with Better Memory Performance for Abstract Words

ERIC Educational Resources Information Center

Chen, Tzu-Ching; Lin, Yung-Yang

2012-01-01

The present study aimed to clarify the spatiotemporal characteristics of memory processing for abstract and concrete words. Neuromagnetic responses to memory encoding and recognition tasks of abstract and concrete nouns were obtained in 18 healthy adults using a whole-head neuromagnetometer. During memory encoding, abstract words elicited larger…

High-throughput olfactory conditioning and memory retention test show variation in Nasonia parasitic wasps

PubMed Central

Hoedjes, K M; Steidle, J L M; Werren, J H; Vet, L E M; Smid, H M

2012-01-01

Most of our knowledge on learning and memory formation results from extensive studies on a small number of animal species. Although features and cellular pathways of learning and memory are highly similar in this diverse group of species, there are also subtle differences. Closely related species of parasitic wasps display substantial variation in memory dynamics and can be instrumental to understanding both the adaptive benefit of and mechanisms underlying this variation. Parasitic wasps of the genus Nasonia offer excellent opportunities for multidisciplinary research on this topic. Genetic and genomic resources available for Nasonia are unrivaled among parasitic wasps, providing tools for genetic dissection of mechanisms that cause differences in learning. This study presents a robust, high-throughput method for olfactory conditioning of Nasonia using a host encounter as reward. A T-maze olfactometer facilitates high-throughput memory retention testing and employs standardized odors of equal detectability, as quantified by electroantennogram recordings. Using this setup, differences in memory retention between Nasonia species were shown. In both Nasonia vitripennis and Nasonia longicornis, memory was observed up to at least 5 days after a single conditioning trial, whereas Nasonia giraulti lost its memory after 2 days. This difference in learning may be an adaptation to species-specific differences in ecological factors, for example, host preference. The high-throughput methods for conditioning and memory retention testing are essential tools to study both ultimate and proximate factors that cause variation in learning and memory formation in Nasonia and other parasitic wasp species. PMID:22804968

Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device.

PubMed

Yagati, Ajay Kumar; Lee, Taek; Choi, Jeong-Woo

2017-07-15

In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I-V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.

WASP (Write a Scientific Paper) using Excel - 11: Test characteristics.

PubMed

Grech, Victor

2018-07-01

The calculation of various test characteristics may be required as part of a data analysis exercise. This paper explains how to set up these calculations in Microsoft Excel in order to obtain sensitivity, specificity, positive and negative predictive values, diagnostic accuracy and prevalence. Copyright © 2018 Elsevier B.V. All rights reserved.

Characteristics of Academically Excellent Business Studies Students in a Post-1992 University

ERIC Educational Resources Information Center

Bennett, Roger; Barkensjo, Anna

2005-01-01

In contrast to the extensive investigation of the characteristics of students who fail or perform badly in "new" universities, research into the factors associated with academic excellence within post-1992 institutions has been sparse. This empirical study examined the profile of a sample of 81 high-flying business studies undergraduates…

Crystallographic Characterization on Polycrystalline Ni-Mn-Ga Alloys with Strong Preferred Orientation

PubMed Central

Li, Zongbin; Yang, Bo; Zou, Naifu; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zhao, Xiang; Zuo, Liang

2017-01-01

Heusler type Ni-Mn-Ga ferromagnetic shape memory alloys can demonstrate excellent magnetic shape memory effect in single crystals. However, such effect in polycrystalline alloys is greatly weakened due to the random distribution of crystallographic orientation. Microstructure optimization and texture control are of great significance and challenge to improve the functional behaviors of polycrystalline alloys. In this paper, we summarize our recent progress on the microstructure control in polycrystalline Ni-Mn-Ga alloys in the form of bulk alloys, melt-spun ribbons and thin films, based on the detailed crystallographic characterizations through neutron diffraction, X-ray diffraction and electron backscatter diffraction. The presented results are expected to offer some guidelines for the microstructure modification and functional performance control of ferromagnetic shape memory alloys. PMID:28772826

Inverse halftoning via robust nonlinear filtering

NASA Astrophysics Data System (ADS)

Shen, Mei-Yin; Kuo, C.-C. Jay

1999-10-01

A new blind inverse halftoning algorithm based on a nonlinear filtering technique of low computational complexity and low memory requirement is proposed in this research. It is called blind since we do not require the knowledge of the halftone kernel. The proposed scheme performs nonlinear filtering in conjunction with edge enhancement to improve the quality of an inverse halftoned image. Distinct features of the proposed approach include: efficiently smoothing halftone patterns in large homogeneous areas, additional edge enhancement capability to recover the edge quality and an excellent PSNR performance with only local integer operations and a small memory buffer.

A 16K-bit static IIL RAM with 25-ns access time

NASA Astrophysics Data System (ADS)

Inabe, Y.; Hayashi, T.; Kawarada, K.; Miwa, H.; Ogiue, K.

1982-04-01

A 16,384 x 1-bit RAM with 25-ns access time, 600-mW power dissipation, and 33 sq mm chip size has been developed. Excellent speed-power performance with high packing density has been achieved by an oxide isolation technology in conjunction with novel ECL circuit techniques and IIL flip-flop memory cells, 980 sq microns (35 x 28 microns) in cell size. Development results have shown that IIL flip-flop memory cell is a trump card for assuring achievement of a high-performance large-capacity bipolar RAM, in the above 16K-bit/chip area.

Characterisation of retention properties of charge-trapping memory cells at low temperatures

NASA Astrophysics Data System (ADS)

Yurchuk, E.; Bollmann, J.; Mikolajick, T.

2009-09-01

The density of states of deep level centers in silicon oxynitride layer of SONOS memory cells are calculated from temperature dependent retention measurement. The dominating charge loss mechanisms are direct trap-to-band tunneling (TB) and thermally stimulated emission (TE). Retention measurements at low temperatures (80 - 300K) will be dominated by TE from more "shallow" traps with energies below 1eV and by TB. Taking into account both independent and rival processes the density of states could be calculated self consisting. The results are in excellent agreement with elsewhere published data.

“Reality” of near-death-experience memories: evidence from a psychodynamic and electrophysiological integrated study

PubMed Central

Palmieri, Arianna; Calvo, Vincenzo; Kleinbub, Johann R.; Meconi, Federica; Marangoni, Matteo; Barilaro, Paolo; Broggio, Alice; Sambin, Marco; Sessa, Paola

2014-01-01

The nature of near-death-experiences (NDEs) is largely unknown but recent evidence suggests the intriguing possibility that NDEs may refer to actually “perceived,” and stored, experiences (although not necessarily in relation to the external physical world). We adopted an integrated approach involving a hypnosis-based clinical protocol to improve recall and decrease memory inaccuracy together with electroencephalography (EEG) recording in order to investigate the characteristics of NDE memories and their neural markers compared to memories of both real and imagined events. We included 10 participants with NDEs, defined by the Greyson NDE scale, and 10 control subjects without NDE. Memories were assessed using the Memory Characteristics Questionnaire. Our hypnosis-based protocol increased the amount of details in the recall of all kind of memories considered (NDE, real, and imagined events). Findings showed that NDE memories were similar to real memories in terms of detail richness, self-referential, and emotional information. Moreover, NDE memories were significantly different from memories of imagined events. The pattern of EEG results indicated that real memory recall was positively associated with two memory-related frequency bands, i.e., high alpha and gamma. NDE memories were linked with theta band, a well-known marker of episodic memory. The recall of NDE memories was also related to delta band, which indexes processes such as the recollection of the past, as well as trance states, hallucinations, and other related portals to transpersonal experience. It is notable that the EEG pattern of correlations for NDE memory recall differed from the pattern for memories of imagined events. In conclusion, our findings suggest that, at a phenomenological level, NDE memories cannot be considered equivalent to imagined memories, and at a neural level, NDE memories are stored as episodic memories of events experienced in a peculiar state of consciousness. PMID:24994974

Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

NASA Astrophysics Data System (ADS)

He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

2017-11-01

The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

Validity and reliability of an online visual-spatial working memory task for self-reliant administration in school-aged children.

PubMed

Van de Weijer-Bergsma, Eva; Kroesbergen, Evelyn H; Prast, Emilie J; Van Luit, Johannes E H

2015-09-01

Working memory is an important predictor of academic performance, and of math performance in particular. Most working memory tasks depend on one-to-one administration by a testing assistant, which makes the use of such tasks in large-scale studies time-consuming and costly. Therefore, an online, self-reliant visual-spatial working memory task (the Lion game) was developed for primary school children (6-12 years of age). In two studies, the validity and reliability of the Lion game were investigated. The results from Study 1 (n = 442) indicated satisfactory six-week test-retest reliability, excellent internal consistency, and good concurrent and predictive validity. The results from Study 2 (n = 5,059) confirmed the results on the internal consistency and predictive validity of the Lion game. In addition, multilevel analysis revealed that classroom membership influenced Lion game scores. We concluded that the Lion game is a valid and reliable instrument for the online computerized and self-reliant measurement of visual-spatial working memory (i.e., updating).

Thermomechanical Analysis of Shape-Memory Composite Tape Spring

NASA Astrophysics Data System (ADS)

Yang, H.; Wang, L. Y.

2013-06-01

Intelligent materials and structures have been extensively applied for satellite designs in order to minimize the mass and reduce the cost in the launch of the spacecraft. Elastic memory composites (EMCs) have the ability of high-strain packaging and shape-memory effect, but increase the parts and total weight due to the additional heating system. Shape-memory sandwich structures Li and Wang (J. Intell. Mater. Syst. Struct. 22(14), 1605-1612, 2011) can overcome such disadvantage by using the metal skin acting as the heating element. However, the high strain in the micro-buckled metal skin decreases the deployment efficiency. This paper aims to present an insight into the folding and deployment behaviors of shape-memory composite (SMC) tape springs. A thermomechanical process was analyzed, including the packaging deformation at an elevated temperature, shape frozen at the low temperature and shape recovery after reheating. The result shows that SMC tape springs can significantly decrease the strain concentration in the metal skin, as well as exhibiting excellent shape frozen and recovery behaviors. Additionally, possible failure modes of SMC tape springs were also analyzed.

The Acceptability and Potential Utility of Cognitive Training to Improve Working Memory in Persons Living With HIV: A Preliminary Randomized Trial.

PubMed

Towe, Sheri L; Patel, Puja; Meade, Christina S

HIV-associated neurocognitive impairments that impact daily function persist in the era of effective antiretroviral therapy. Cognitive training, a promising low-cost intervention, has been shown to improve neurocognitive functioning in some clinical populations. We tested the feasibility, acceptability, and preliminary effects of computerized cognitive training to improve working memory in persons living with HIV infection (PLWH) and working memory impairment. In this randomized clinical trial, we assigned 21 adult PLWH to either an experimental cognitive training intervention or an attention-matched control training intervention. Participants completed 12 training sessions across 10 weeks with assessments at baseline and post-training. Session attendance was excellent and participants rated the program positively. Participants in the experimental arm demonstrated improved working memory function over time; participants in the control arm showed no change. Our results suggest that cognitive training may be a promising intervention for working memory impairment in PLWH and should be evaluated further. Copyright © 2017 Association of Nurses in AIDS Care. Published by Elsevier Inc. All rights reserved.

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

NASA Astrophysics Data System (ADS)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Natural variation in learning rate and memory dynamics in parasitoid wasps: opportunities for converging ecology and neuroscience

PubMed Central

Hoedjes, Katja M.; Kruidhof, H. Marjolein; Huigens, Martinus E.; Dicke, Marcel; Vet, Louise E. M.; Smid, Hans M.

2011-01-01

Although the neural and genetic pathways underlying learning and memory formation seem strikingly similar among species of distant animal phyla, several more subtle inter- and intraspecific differences become evident from studies on model organisms. The true significance of such variation can only be understood when integrating this with information on the ecological relevance. Here, we argue that parasitoid wasps provide an excellent opportunity for multi-disciplinary studies that integrate ultimate and proximate approaches. These insects display interspecific variation in learning rate and memory dynamics that reflects natural variation in a daunting foraging task that largely determines their fitness: finding the inconspicuous hosts to which they will assign their offspring to develop. We review bioassays used for oviposition learning, the ecological factors that are considered to underlie the observed differences in learning rate and memory dynamics, and the opportunities for convergence of ecology and neuroscience that are offered by using parasitoid wasps as model species. We advocate that variation in learning and memory traits has evolved to suit an insect's lifestyle within its ecological niche. PMID:21106587

Developmental Dissociation Between the Maturation of Procedural Memory and Declarative Memory

PubMed Central

Finn, Amy S.; Kalra, Priya B.; Goetz, Calvin; Leonard, Julia A.; Sheridan, Margaret A.; Gabrieli, John D. E.

2015-01-01

Declarative memory and procedural memory are known to be two fundamentally different kinds of memory that are dissociable in their psychological characteristics and measurement (explicit versus implicit) and in the neural systems that subserve each kind of memory. Declarative memory abilities are known to improve from childhood through young adulthood, but the developmental maturation of procedural memory is largely unknown. We compared 10-year-old children and young adults on measures of declarative memory, working memory capacity, and four measures of procedural memory that have been strongly dissociated from declarative memory (mirror tracing, rotary pursuit, probabilistic classification, and artificial grammar). Children had lesser declarative memory ability and lesser working memory capacity than the adults, but exhibited learning equivalent to adults on all four measures of procedural memory. Declarative and procedural memory are, therefore, developmentally dissociable, with procedural memory being adult-like by age 10 and declarative memory continuing to mature into young adulthood. PMID:26560675

Receiver Operating Characteristic Curve Analysis of Wechsler Memory Scale-Revised Scores in Epilepsy Surgery Candidates.

ERIC Educational Resources Information Center

Barr, William B.

1997-01-01

Wechsler Memory Scale-Revised (WMS-R) scores were analyzed for 82 epilepsy surgery candidates and used in combination with receiver operating characteristic curves to classify patients with left (LTL) and right (RTL) temporal lobe seizure onset. Results indicate that WMS-R scores used alone or in combination provide relatively poor discrimination…

[Autobiographical memory of depressed patients].

PubMed

Yao, Shuqiao; Liu, Xianhua; Zhao, Weifeng; Yang, Wenhui; Tan, Furong

2010-07-01

To explore the autobiographical memory characteristics in depressed patients and their influence factors. Autobiographical memory, emotion and cognitive executive function of 60 depressed patients and 60 healthy controls were assessed with autobiographical memory test (AMT), Hamilton depression scale (HAMD), Beck depression inventory (BDI), Beck anxiety inventory (BAI), hospital anxiety and depression scale (HAD), arrow-task stroop test (ATST), Wisconsin card sorting test (WCST), Backward masking test (BMT) and continuous performance test (CPT). The specific memory of the depressed group was significantly less than that of the control group, and was negatively related with the negative emotion score, the time of anterograde and retrograde reading of ATST, and the time difference of ATST. The overgeneral memory increased and the latency to response of ATST was significantly longer than that of the control group. The two factors were positively related with the negative emotion score, the time of anterograde and retrograde reading of ATST, and the time difference of ATST. The autobiographical memory of the depressed patients is overgeneralized and retarded. These characteristics are related with negative emotion and impairment of cognitive executive function.

Leveling up the analysis of the reminiscence bump in autobiographical memory: A new approach based on multilevel multinomial models.

PubMed

Zimprich, Daniel; Wolf, Tabea

2018-06-20

In many studies of autobiographical memory, participants are asked to generate more than one autobiographical memory. The resulting data then have a hierarchical or multilevel structure, in the sense that the autobiographical memories (Level 1) generated by the same person (Level 2) tend to be more similar. Transferred to an analysis of the reminiscence bump in autobiographical memory, at Level 1 the prediction of whether an autobiographical memory will fall within the reminiscence bump is based on the characteristics of that memory. At Level 2, the prediction of whether an individual will report more autobiographical memories that fall in the reminiscence bump is based on the characteristics of the individual. We suggest a multilevel multinomial model that allows for analyzing whether an autobiographical memory falls in the reminiscence bump at both levels of analysis simultaneously. The data come from 100 older participants who reported up to 33 autobiographical memories. Our results showed that about 12% of the total variance was between persons (Level 2). Moreover, at Level 1, memories of first-time experiences were more likely to fall in the reminiscence bump than were emotionally more positive memories. At Level 2, persons who reported more emotionally positive memories tended to report fewer memories from the life period after the reminiscence bump. In addition, cross-level interactions showed that the effects at Level 1 partly depended on the Level 2 effects. We discuss possible extensions of the model we present and the meaning of our findings for two prominent explanatory approaches to the reminiscence bump, as well as future directions.

Two processes support visual recognition memory in rhesus monkeys.

PubMed

Guderian, Sebastian; Brigham, Danielle; Mishkin, Mortimer

2011-11-29

A large body of evidence in humans suggests that recognition memory can be supported by both recollection and familiarity. Recollection-based recognition is characterized by the retrieval of contextual information about the episode in which an item was previously encountered, whereas familiarity-based recognition is characterized instead by knowledge only that the item had been encountered previously in the absence of any context. To date, it is unknown whether monkeys rely on similar mnemonic processes to perform recognition memory tasks. Here, we present evidence from the analysis of receiver operating characteristics, suggesting that visual recognition memory in rhesus monkeys also can be supported by two separate processes and that these processes have features considered to be characteristic of recollection and familiarity. Thus, the present study provides converging evidence across species for a dual process model of recognition memory and opens up the possibility of studying the neural mechanisms of recognition memory in nonhuman primates on tasks that are highly similar to the ones used in humans.

Two processes support visual recognition memory in rhesus monkeys

PubMed Central

Guderian, Sebastian; Brigham, Danielle; Mishkin, Mortimer

2011-01-01

A large body of evidence in humans suggests that recognition memory can be supported by both recollection and familiarity. Recollection-based recognition is characterized by the retrieval of contextual information about the episode in which an item was previously encountered, whereas familiarity-based recognition is characterized instead by knowledge only that the item had been encountered previously in the absence of any context. To date, it is unknown whether monkeys rely on similar mnemonic processes to perform recognition memory tasks. Here, we present evidence from the analysis of receiver operating characteristics, suggesting that visual recognition memory in rhesus monkeys also can be supported by two separate processes and that these processes have features considered to be characteristic of recollection and familiarity. Thus, the present study provides converging evidence across species for a dual process model of recognition memory and opens up the possibility of studying the neural mechanisms of recognition memory in nonhuman primates on tasks that are highly similar to the ones used in humans. PMID:22084079

A combined finite element-boundary integral formulation for solution of two-dimensional scattering problems via CGFFT. [Conjugate Gradient Fast Fourier Transformation

NASA Technical Reports Server (NTRS)

Collins, Jeffery D.; Volakis, John L.; Jin, Jian-Ming

1990-01-01

A new technique is presented for computing the scattering by 2-D structures of arbitrary composition. The proposed solution approach combines the usual finite element method with the boundary-integral equation to formulate a discrete system. This is subsequently solved via the conjugate gradient (CG) algorithm. A particular characteristic of the method is the use of rectangular boundaries to enclose the scatterer. Several of the resulting boundary integrals are therefore convolutions and may be evaluated via the fast Fourier transform (FFT) in the implementation of the CG algorithm. The solution approach offers the principal advantage of having O(N) memory demand and employs a 1-D FFT versus a 2-D FFT as required with a traditional implementation of the CGFFT algorithm. The speed of the proposed solution method is compared with that of the traditional CGFFT algorithm, and results for rectangular bodies are given and shown to be in excellent agreement with the moment method.

A combined finite element and boundary integral formulation for solution via CGFFT of 2-dimensional scattering problems

NASA Technical Reports Server (NTRS)

Collins, Jeffery D.; Volakis, John L.

1989-01-01

A new technique is presented for computing the scattering by 2-D structures of arbitrary composition. The proposed solution approach combines the usual finite element method with the boundary integral equation to formulate a discrete system. This is subsequently solved via the conjugate gradient (CG) algorithm. A particular characteristic of the method is the use of rectangular boundaries to enclose the scatterer. Several of the resulting boundary integrals are therefore convolutions and may be evaluated via the fast Fourier transform (FFT) in the implementation of the CG algorithm. The solution approach offers the principle advantage of having O(N) memory demand and employs a 1-D FFT versus a 2-D FFT as required with a traditional implementation of the CGFFT algorithm. The speed of the proposed solution method is compared with that of the traditional CGFFT algorithm, and results for rectangular bodies are given and shown to be in excellent agreement with the moment method.

Receiver operating characteristic analysis of age-related changes in lineup performance.

PubMed

Humphries, Joyce E; Flowe, Heather D

2015-04-01

In the basic face memory literature, support has been found for the late maturation hypothesis, which holds that face recognition ability is not fully developed until at least adolescence. Support for the late maturation hypothesis in the criminal lineup identification literature, however, has been equivocal because of the analytic approach that has been used to examine age-related changes in identification performance. Recently, receiver operator characteristic (ROC) analysis was applied for the first time in the adult eyewitness memory literature to examine whether memory sensitivity differs across different types of lineup tests. ROC analysis allows for the separation of memory sensitivity from response bias in the analysis of recognition data. Here, we have made the first ROC-based comparison of adults' and children's (5- and 6-year-olds and 9- and 10-year-olds) memory performance on lineups by reanalyzing data from Humphries, Holliday, and Flowe (2012). In line with the late maturation hypothesis, memory sensitivity was significantly greater for adults compared with young children. Memory sensitivity for older children was similar to that for adults. The results indicate that the late maturation hypothesis can be generalized to account for age-related performance differences on an eyewitness memory task. The implications for developmental eyewitness memory research are discussed. Copyright © 2014 Elsevier Inc. All rights reserved.

Characteristics and Determinants of Teacher-Designed Pay for Performance Plans: Evidence from Texas' Governor's Educator Excellence Grant (GEEG) Program. Research Brief

ERIC Educational Resources Information Center

National Center on Performance Incentives, 2008

2008-01-01

In "Characteristics and Determinants of Teacher-Designed Pay for Performance Plans: Evidence from Texas' Governor's Educator Excellence Grant (GEEG) Program"--a paper presented at the February 2008 National Center on Performance Incentives research to policy conference--Lori Taylor, Matthew Springer, and Mark Ehlert describe the teacher…

Age-related cognitive task effects on gait characteristics: do different working memory components make a difference?

PubMed

Qu, Xingda

2014-10-27

Though it is well recognized that gait characteristics are affected by concurrent cognitive tasks, how different working memory components contribute to dual task effects on gait is still unknown. The objective of the present study was to investigate dual-task effects on gait characteristics, specifically the application of cognitive tasks involving different working memory components. In addition, we also examined age-related differences in such dual-task effects. Three cognitive tasks (i.e. 'Random Digit Generation', 'Brooks' Spatial Memory', and 'Counting Backward') involving different working memory components were examined. Twelve young (6 males and 6 females, 20 ~ 25 years old) and 12 older participants (6 males and 6 females, 60 ~ 72 years old) took part in two phases of experiments. In the first phase, each cognitive task was defined at three difficulty levels, and perceived difficulty was compared across tasks. The cognitive tasks perceived to be equally difficult were selected for the second phase. In the second phase, four testing conditions were defined, corresponding to a baseline and the three equally difficult cognitive tasks. Participants walked on a treadmill at their self-selected comfortable speed in each testing condition. Body kinematics were collected during treadmill walking, and gait characteristics were assessed using spatial-temporal gait parameters. Application of the concurrent Brooks' Spatial Memory task led to longer step times compared to the baseline condition. Larger step width variability was observed in both the Brooks' Spatial Memory and Counting Backward dual-task conditions than in the baseline condition. In addition, cognitive task effects on step width variability differed between two age groups. In particular, the Brooks' Spatial Memory task led to significantly larger step width variability only among older adults. These findings revealed that cognitive tasks involving the visuo-spatial sketchpad interfered with gait more severely in older versus young adults. Thus, dual-task training, in which a cognitive task involving the visuo-spatial sketchpad (e.g. the Brooks' Spatial Memory task) is concurrently performed with walking, could be beneficial to mitigate impairments in gait among older adults.

Why are you telling me that? A conceptual model of the social function of autobiographical memory.

PubMed

Alea, Nicole; Bluck, Susan

2003-03-01

In an effort to stimulate and guide empirical work within a functional framework, this paper provides a conceptual model of the social functions of autobiographical memory (AM) across the lifespan. The model delineates the processes and variables involved when AMs are shared to serve social functions. Components of the model include: lifespan contextual influences, the qualitative characteristics of memory (emotionality and level of detail recalled), the speaker's characteristics (age, gender, and personality), the familiarity and similarity of the listener to the speaker, the level of responsiveness during the memory-sharing process, and the nature of the social relationship in which the memory sharing occurs (valence and length of the relationship). These components are shown to influence the type of social function served and/or, the extent to which social functions are served. Directions for future empirical work to substantiate the model and hypotheses derived from the model are provided.

Semantic memory assessment in 15 patients with amyotrophic lateral sclerosis.

PubMed

Hervieu-Bègue, M; Rouaud, O; Graule Petot, A; Catteau, A; Giroud, M

2016-01-01

A total of 30 to 50% of amyotrophic lateral sclerosis patients suffer from cognitive disorders. The aim of the study is to characterize these disorders and to assess semantic memory in non-demented ALS patients. The secondary aim is to look for a link between disease type and neuropsychological characteristics. Patients were followed in an ALS center in Dijon. The following neuropsychological tests were used in this study: Folstein test, BREF test, verbal fluency, Isaac test, GRESEM test and TOP 30 test. Fifteen ALS patients were included. Nine of them (60%) were suffering from a semantic memory disorder. There was no correlation between ALS characteristics and the semantic memory disorder. This is the first study to reveal a semantic memory disorder in ALS. This result accentuates the hypothesis that ALS and semantic dementia are two phenotypes of the same degenerative process linked to TDP 43 proteinopathy. Copyright © 2016. Published by Elsevier Masson SAS.

Shape Memory Characteristics of Ti(sub 49.5)Ni(sub 25)Pd(sub 25)Sc(sub 0.5) High-Temperature Shape Memory Alloy After Severe Plastic Deformation

NASA Technical Reports Server (NTRS)

Atli, K. C.; Karaman, I.; Noebe, R. D.; Garg, A.; Chumlyakov, Y. I.; Kireeva, I. V.

2011-01-01

A Ti(49.5)Ni25Pd25Sc(0.5) high-temperature shape memory alloy is thermomechanically processed to obtain enhanced shape-memory characteristics: in particular, dimensional stability upon repeated thermal cycles under constant loads. This is accomplished using severe plastic deformation via equal channel angular extrusion (ECAE) and post-processing annealing heat treatments. The results of the thermomechanical experiments reveal that the processed materials display enhanced shape memory response, exhibiting higher recoverable transformation and reduced irrecoverable strain levels upon thermal cycling compared with the unprocessed material. This improvement is attributed to the increased strength and resistance of the material against defect generation upon phase transformation as a result of the microstructural refinement due to the ECAE process, as supported by the electron microscopy observations.

Effects of Rehearsal on Perceived and Imagined Autobiographical Memories.

ERIC Educational Resources Information Center

Suengas, Aurora G.; Johnson, Marcia K.

It has been shown that internally generated (thought or imagination) and externally generated (events, things, or people encountered in the past) autobiographical memories differ in characteristic ways. To examine the consequences of rehearsal on simulated perceived and imagined autobiographical memories, 36 undergraduate students participated in…

Characteristics of a Nonvolatile SRAM Memory Cell Utilizing a Ferroelectric Transistor

NASA Technical Reports Server (NTRS)

Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2011-01-01

The SRAM cell circuit is a standard for volatile data storage. When utilizing one or more ferroelectric transistors, the hysteresis characteristics give unique properties to the SRAM circuit, providing for investigation into the development of a nonvolatile memory cell. This paper discusses various formations of the SRAM circuit, using ferroelectric transistors, n-channel and p-channel MOSFETs, and resistive loads. With varied source and supply voltages, the effects on the timing and retention characteristics are investigated, including retention times of up to 24 hours.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

NASA Astrophysics Data System (ADS)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG in the form of PVD TaN was investigated along with high-k blocking dielectric. The material properties of TaN metal and high-k / low-k dielectric engineering were systematically studied. And the resulting memory structures exhibit excellent memory characteristics and scalability of the metal FG down to ˜1nm, which is promising in order to reduce the unwanted FG-FG interferences. In the later part of the study, the thermal stability of the combined stack was examined and various approaches to improve the stability and understand the cause of instability were explored. The performance of the high-k IPD metal FG memory structure was observed to degrade with higher annealing conditions and the deteriorated behavior was attributed to the leakage instability of the high-k /TaN capacitor. While the degradation is pronounced in both MIM and MIS capacitors, a higher leakage increment was seen in MIM, which was attributed to the higher degree of dielectric crystallization. In an attempt to improve the thermal stability, the trade-off in using amorphous interlayers to reduce the enhanced dielectric crystallization on metal was highlighted. Also, the effect of oxygen vacancies and grain growth on the dielectric leakage was studied through a multi-deposition-multi-anneal technique. Multi step deposition and annealing in a more electronegative ambient was observed to have a positive impact on the dielectric performance.

Inhibition of histone deacetylase 3 via RGFP966 facilitates cortical plasticity underlying unusually accurate auditory associative cue memory for excitatory and inhibitory cue-reward associations.

PubMed

Shang, Andrea; Bylipudi, Sooraz; Bieszczad, Kasia M

2018-05-31

Epigenetic mechanisms are key for regulating long-term memory (LTM) and are known to exert control on memory formation in multiple systems of the adult brain, including the sensory cortex. One epigenetic mechanism is chromatin modification by histone acetylation. Blocking the action of histone de-acetylases (HDACs) that normally negatively regulate LTM by repressing transcription has been shown to enable memory formation. Indeed, HDAC inhibition appears to facilitate memory by altering the dynamics of gene expression events important for memory consolidation. However, less understood are the ways in which molecular-level consolidation processes alter subsequent memory to enhance storage or facilitate retrieval. Here we used a sensory perspective to investigate whether the characteristics of memory formed with HDAC inhibitors are different from naturally-formed memory. One possibility is that HDAC inhibition enables memory to form with greater sensory detail than normal. Because the auditory system undergoes learning-induced remodeling that provides substrates for sound-specific LTM, we aimed to identify behavioral effects of HDAC inhibition on memory for specific sound features using a standard model of auditory associative cue-reward learning, memory, and cortical plasticity. We found that three systemic post-training treatments of an HDAC3-inhibitor (RGPF966, Abcam Inc.) in rats in the early phase of training facilitated auditory discriminative learning, changed auditory cortical tuning, and increased the specificity for acoustic frequency formed in memory of both excitatory (S+) and inhibitory (S-) associations for at least 2 weeks. The findings support that epigenetic mechanisms act on neural and behavioral sensory acuity to increase the precision of associative cue memory, which can be revealed by studying the sensory characteristics of long-term associative memory formation with HDAC inhibitors. Published by Elsevier B.V.

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.

PubMed

Kim, Kang Lib; Lee, Wonho; Hwang, Sun Kak; Joo, Se Hun; Cho, Suk Man; Song, Giyoung; Cho, Sung Hwan; Jeong, Beomjin; Hwang, Ihn; Ahn, Jong-Hyun; Yu, Young-Jun; Shin, Tae Joo; Kwak, Sang Kyu; Kang, Seok Ju; Park, Cheolmin

2016-01-13

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Integrated information storage and transfer with a coherent magnetic device

PubMed Central

Jia, Ning; Banchi, Leonardo; Bayat, Abolfazl; Dong, Guangjiong; Bose, Sougato

2015-01-01

Quantum systems are inherently dissipation-less, making them excellent candidates even for classical information processing. We propose to use an array of large-spin quantum magnets for realizing a device which has two modes of operation: memory and data-bus. While the weakly interacting low-energy levels are used as memory to store classical information (bits), the high-energy levels strongly interact with neighboring magnets and mediate the spatial movement of information through quantum dynamics. Despite the fact that memory and data-bus require different features, which are usually prerogative of different physical systems – well isolation for the memory cells, and strong interactions for the transmission – our proposal avoids the notorious complexity of hybrid structures. The proposed mechanism can be realized with different setups. We specifically show that molecular magnets, as the most promising technology, can implement hundreds of operations within their coherence time, while adatoms on surfaces probed by a scanning tunneling microscope is a future possibility. PMID:26347152

Point-of-care: being a pilot site. Interview by Bill W. Childs.

PubMed

Bills, J

1988-11-01

Scripps Memorial Hospital in Chula Vista, CA, a 159-bed acute care facility, opened in 1964. The facility was acquired in 1986 by the Scripps Memorial Hospitals family which has acute care facilities in La Jolla, Encinitas and Chula Vista, CA. Prior to 1986, the hospital was in severe financial difficulty and was very near to closing its doors. With the help of an excellent group of employees and medical staff, Scripps Memorial Hospital--Chula Vista has made significant changes in all aspects of the operation. The CliniCom pilot program is only one of many changes the hospital has introduced in its effort to continue its role as a major healthcare provider in the South Bay area of San Diego. Scripps Memorial Hospital--Chula Vista is a very active facility with 85 percent occupancy, 32,000 emergency visits and 4,200 deliveries a year. The hospital is planning an expansion program to meet the current and future needs of the community.

Sb7Te3/Ge multilayer films for low power and high speed phase-change memory

NASA Astrophysics Data System (ADS)

Chen, Shiyu; Wu, Weihua; Zhai, Jiwei; Song, Sannian; Song, Zhitang

2017-06-01

Phase-change memory has attracted enormous attention for its excellent properties as compared to flash memories due to their high speed, high density, better date retention and low power consumption. Here we present Sb7Te3/Ge multilayer films by using a magnetron sputtering method. The 10 years’ data retention temperature is significantly increased compared with pure Sb7Te3. When the annealing temperature is above 250 °C, the Sb7Te3/Ge multilayer thin films have better interface properties, which renders faster crystallization speed and high thermal stability. The decrease in density of ST/Ge multilayer films is only around 5%, which is very suitable for phase change materials. Moreover, the low RESET power benefits from high resistivity and better thermal stability in the PCM cells. This work demonstrates that the multilayer configuration thin films with tailored properties are beneficial for improving the stability and speed in phase change memory applications.

The Effect of Student-Related and Text-Related Characteristics on Student's Reading Behaviour and Text Comprehension: An Eye Movement Study

ERIC Educational Resources Information Center

de Leeuw, Linda; Segers, Eliane; Verhoeven, Ludo

2016-01-01

The focus of the present study was on the mediation and moderation effects of reading processes as evidenced from eye movements on the relation between cognitive and linguistic student characteristics (word decoding, vocabulary, comprehension skill, short-term memory, working memory, and nonverbal intelligence) and text comprehension. Forty 4th…

Shape Memory Polymers: A Joint Chemical and Materials Engineering Hands-On Experience

ERIC Educational Resources Information Center

Seif, Mujan; Beck, Matthew

2018-01-01

Hands-on experiences are excellent tools for increasing retention of first year engineering students. They also encourage interdisciplinary collaboration, a critical skill for modern engineers. In this paper, we describe and evaluate a joint Chemical and Materials Engineering hands-on lab that explores cross-linking and glass transition in…

Similarities and Differences between Working Memory and Long-Term Memory: Evidence from the Levels-of-Processing Span Task

ERIC Educational Resources Information Center

Rose, Nathan S.; Myerson, Joel; Roediger, Henry L., III; Hale, Sandra

2010-01-01

Two experiments compared the effects of depth of processing on working memory (WM) and long-term memory (LTM) using a levels-of-processing (LOP) span task, a newly developed WM span procedure that involves processing to-be-remembered words based on their visual, phonological, or semantic characteristics. Depth of processing had minimal effect on…

Individual differences in the effects of chronic stress on memory: behavioral and neurochemical correlates of resiliency.

PubMed

Sweis, B M; Veverka, K K; Dhillon, E S; Urban, J H; Lucas, L R

2013-08-29

Chronic stress has been shown to impair memory, however, the extent to which memory can be impaired is often variable across individuals. Predisposed differences in particular traits, such as anxiety, may reveal underlying neurobiological mechanisms that could be driving individual differences in sensitivity to stress and, thus, stress resiliency. Such pre-morbid characteristics may serve as early indicators of susceptibility to stress. Neuropeptide Y (NPY) and enkephalin (ENK) are neurochemical messengers of interest implicated in modulating anxiety and motivation circuitry; however, little is known about how these neuropeptides interact with stress resiliency and memory. In this experiment, adult male rats were appetitively trained to locate sugar rewards in a motivation-based spatial memory task before undergoing repeated immobilization stress and then being tested for memory retention. Anxiety-related behaviors, among other characteristics, were monitored longitudinally. Results indicated that stressed animals which showed little to no impairments in memory post-stress (i.e., the more stress-resilient individuals) exhibited lower anxiety levels prior to stress when compared to stressed animals that showed large deficits in memory (i.e., the more stress-susceptible individuals). Interestingly, all stressed animals, regardless of memory change, showed reduced body weight gain as well as thymic involution, suggesting that the effects of stress on metabolism and the immune system were dissociated from the effects of stress on higher cognition, and that stress resiliency seems to be domain-specific rather than a global characteristic within an individual. Neurochemical analyses revealed that NPY in the hypothalamus and amygdala and ENK in the nucleus accumbens were modulated differentially between stress-resilient and stress-susceptible individuals, with elevated expression of these neuropeptides fostering anxiolytic and pro-motivation function, thus driving cognitive resiliency in a domain-specific manner. Findings suggest that such neurochemical markers may be novel targets for pharmacological interventions that can serve to prevent or ameliorate the negative effects of stress on memory. Copyright © 2013 IBRO. Published by Elsevier Ltd. All rights reserved.

Adaptive Memory: Is Survival Processing Special?

ERIC Educational Resources Information Center

Nairne, James S.; Pandeirada, Josefa N. S.

2008-01-01

Do the operating characteristics of memory continue to bear the imprints of ancestral selection pressures? Previous work in our laboratory has shown that human memory may be specially tuned to retain information processed in terms of its survival relevance. A few seconds of survival processing in an incidental learning context can produce recall…

Perspective view, northeast. Billings Memorial Library was designed by H.H. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Perspective view, northeast. Billings Memorial Library was designed by H.H. Richardson in 1883-85 in his characteristic Romanesque Revival mode. Located on the University of Vermont campus, it is now a student center. - University of Vermont, Billings Memorial Library, 48 University Place, Burlington, Chittenden County, VT

Recognition Memory: Adding a Response Deadline Eliminates Recollection but Spares Familiarity

ERIC Educational Resources Information Center

Sauvage, Magdalena M.; Beer, Zachery; Eichenbaum, Howard

2010-01-01

A current controversy in memory research concerns whether recognition is supported by distinct processes of familiarity and recollection, or instead by a single process wherein familiarity and recollection reflect weak and strong memories, respectively. Recent studies using receiver operating characteristic (ROC) analyses in an animal model have…

Electrically-controlled nonlinear switching and multi-level storage characteristics in WOx film-based memory cells

NASA Astrophysics Data System (ADS)

Duan, W. J.; Wang, J. B.; Zhong, X. L.

2018-05-01

Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation memory due to its scalability, high integration density and non-volatile storage characteristics. Here, the multiple electrical characteristics in Pt/WOx/Pt cells are investigated. Both of the nonlinear switching and multi-level storage can be achieved by setting different compliance current in the same cell. The correlations among the current, time and temperature are analyzed by using contours and 3D surfaces. The switching mechanism is explained in terms of the formation and rupture of conductive filament which is related to oxygen vacancies. The experimental results show that the non-stoichiometric WOx film-based device offers a feasible way for the applications of oxide-based RRAMs.

Developmental dissociation between the maturation of procedural memory and declarative memory.

PubMed

Finn, Amy S; Kalra, Priya B; Goetz, Calvin; Leonard, Julia A; Sheridan, Margaret A; Gabrieli, John D E

2016-02-01

Declarative memory and procedural memory are known to be two fundamentally different kinds of memory that are dissociable in their psychological characteristics and measurement (explicit vs. implicit) and in the neural systems that subserve each kind of memory. Declarative memory abilities are known to improve from childhood through young adulthood, but the developmental maturation of procedural memory is largely unknown. We compared 10-year-old children and young adults on measures of declarative memory and working memory capacity and on four measures of procedural memory that have been strongly dissociated from declarative memory (mirror tracing, rotary pursuit, probabilistic classification, and artificial grammar). Children had lesser declarative memory ability and lesser working memory capacity than adults, but children exhibited learning equivalent to adults on all four measures of procedural memory. Therefore, declarative memory and procedural memory are developmentally dissociable, with procedural memory being adult-like by age 10years and declarative memory continuing to mature into young adulthood. Copyright © 2015 Elsevier Inc. All rights reserved.

Effect with high density nano dot type storage layer structure on 20 nm planar NAND flash memory characteristics

NASA Astrophysics Data System (ADS)

Sasaki, Takeshi; Muraguchi, Masakazu; Seo, Moon-Sik; Park, Sung-kye; Endoh, Tetsuo

2014-01-01

The merits, concerns and design principle for the future nano dot (ND) type NAND flash memory cell are clarified, by considering the effect of storage layer structure on NAND flash memory characteristics. The characteristics of the ND cell for a NAND flash memory in comparison with the floating gate type (FG) is comprehensively studied through the read, erase, program operation, and the cell to cell interference with device simulation. Although the degradation of the read throughput (0.7% reduction of the cell current) and slower program time (26% smaller programmed threshold voltage shift) with high density (10 × 1012 cm-2) ND NAND are still concerned, the suppress of the cell to cell interference with high density (10 × 1012 cm-2) plays the most important part for scaling and multi-level cell (MLC) operation in comparison with the FG NAND. From these results, the design knowledge is shown to require the control of the number of nano dots rather than the higher nano dot density, from the viewpoint of increasing its memory capacity by MLC operation and suppressing threshold voltage variability caused by the number of dots in the storage layer. Moreover, in order to increase its memory capacity, it is shown the tunnel oxide thickness with ND should be designed thicker (>3 nm) than conventional designed ND cell for programming/erasing with direct tunneling mechanism.

Bio-based hyperbranched thermosetting polyurethane/triethanolamine functionalized multi-walled carbon nanotube nanocomposites as shape memory materials.

PubMed

Kalita, Hemjyoti; Karak, Niranjan

2014-07-01

Here, bio-based shape memory polymers have generated immense interest in recent times. Here, Bio-based hyperbranched polyurethane/triethanolamine functionalized multi-walled carbon nanotube (TEA-f-MWCNT) nanocomposites were prepared by in-situ pre-polymerization technique. The Fourier transform infrared spectroscopy and the transmission electron microscopic studies showed the strong interfacial adhesion and the homogeneous distribution of TEA-f-MWCNT in the polyurethane matrix. The prepared epoxy cured thermosetting nanocomposites exhibited enhanced tensile strength (6.5-34.5 MPa), scratch hardness (3.0-7.5 kg) and thermal stability (241-288 degrees C). The nanocomposites showed excellent shape fixity and shape recovery. The shape recovery time decreases (24-10 s) with the increase of TEA-f-MWCNT content in the nanocomposites. Thus the studied nanocomposites have potential to be used as advanced shape memory materials.

Memory: from the laboratory to everyday life.

PubMed

Schacter, Daniel L

2013-12-01

One of the key goals of memory research is to develop a basic understanding of the nature and characteristics of memory processes and systems. Another important goal is to develop useful applications of basic research to everyday life. This editorial considers two lines of work that illustrate some of the prospects for applying memory research to everyday life: interpolated quizzing to enhance learning in educational settings, and specificity training to enhance memory and associated functions in individuals who have difficulties remembering details of their past experiences.

Research about Memory Detection Based on the Embedded Platform

NASA Astrophysics Data System (ADS)

Sun, Hao; Chu, Jian

As is known to us all, the resources of memory detection of the embedded systems are very limited. Taking the Linux-based embedded arm as platform, this article puts forward two efficient memory detection technologies according to the characteristics of the embedded software. Especially for the programs which need specific libraries, the article puts forwards portable memory detection methods to help program designers to reduce human errors,improve programming quality and therefore make better use of the valuable embedded memory resource.

Visual perspective in autobiographical memories: reliability, consistency, and relationship to objective memory performance.

PubMed

Siedlecki, Karen L

2015-01-01

Visual perspective in autobiographical memories was examined in terms of reliability, consistency, and relationship to objective memory performance in a sample of 99 individuals. Autobiographical memories may be recalled from two visual perspectives--a field perspective in which individuals experience the memory through their own eyes, or an observer perspective in which individuals experience the memory from the viewpoint of an observer in which they can see themselves. Participants recalled nine word-cued memories that differed in emotional valence (positive, negative and neutral) and rated their memories on 18 scales. Results indicate that visual perspective was the most reliable memory characteristic overall and is consistently related to emotional intensity at the time of recall and amount of emotion experienced during the memory. Visual perspective is unrelated to memory for words, stories, abstract line drawings or faces.

Reconsolidation and update of morphine-associated contextual memory in mice.

PubMed

Escosteguy-Neto, Joao Carlos; Varela, Patricia; Correa-Neto, Nelson Francisco; Coelho, Laura Segismundo; Onaivi, Emmanuel S; Santos-Junior, Jair Guilherme

2016-04-01

Drug addiction can be viewed as a pathological memory that is constantly retrieved and reconsolidated. Since drug abuse takes place in different contexts, it could be considered that reconsolidation plays a role in memory updating. There is consistent evidence supporting the role of reconsolidation in the strength and maintenance of contextual memories induced by drugs of abuse. However, this role is not well established in memory update. The purpose of the current study was to assess the reconsolidation process over memory update. C57BL6 mice were subjected to a morphine-induced, conditioned place preference (CPP) paradigm. Based on CPP results, animals were divided into distinct experimental groups, according to the contextual characteristics of the re-exposure and a second CPP Test. Re-exposure in the original context was important for memory maintenance and re-exposure under discrete contextual changes resulted in memory updating, although original memory was maintained. Interestingly, cycloheximide, an inhibitor of protein synthesis, had different outcomes in our protocol. When the re-exposure was done under discrete contextual changes, cycloheximide treatment just after re-exposure blocked memory updating, without changes in memory maintenance. When re-exposure was done under the original context, only two subsequent cycloheximide injections (3 and 6h) disrupted later CPP expression. Considering the temporal window of protein synthesis in consolidation and reconsolidation, these findings suggest that re-exposure, according to the contextual characteristics in our protocol, could trigger both phenomena. Furthermore, when new information is present on retrieval, reconsolidation plays a pivotal role in memory updating. Copyright © 2016 Elsevier Inc. All rights reserved.

Short-Term Exposure to Lambda-Cyhalothrin Negatively Affects the Survival and Memory-Related Characteristics of Worker Bees Apis mellifera.

PubMed

Liao, Chun-Hua; He, Xu-Jiang; Wang, Zi-Long; Barron, Andrew B; Zhang, Bo; Zeng, Zhi-Jiang; Wu, Xiao-Bo

2018-07-01

Pesticides are considered one of the major contemporary stressors of honey bee health. In this study, the effects of short-term exposure to lambda-cyhalothrin on lifespan, learning, and memory-related characteristics of Apis mellifera were systematically examined. Short-term exposure to lambda-cyhalothrin in worker bees reduced lifespan, affected learning and memory performance, reduced the homing ability, and influenced the expression levels of two learning and memory-related genes of A. mellifera. This research identifies the nature of the sublethal effects of lambda-cyhalothrin on bees and the level of exposure that can be harmful to bee health. This new information will assist in establishing guidelines for the safe use of lambda-cyhalothrin in the field.

The Interplay of Reader Goals, Working Memory, and Text Structure During Reading

PubMed Central

Bohn-Gettler, Catherine M.; Kendeou, Panayiota

2014-01-01

In the current study we examined the complex interactions of instructional context, text properties, and reader characteristics during comprehension. College students were tasked with the goal of reading for study versus entertainment (instructional context) while thinking-aloud about four different expository text structures (text properties). Working memory also was assessed (reader characteristics). Reading goals and working memory interacted to influence paraphrasing and non-coherence processes when thinking aloud. Reading goals, working memory, and text structure all interacted to influence text-based inferences. Text structure also influenced knowledge-based inferences. Post-reading recall was highest for those with the instructional goal of reading for study (compared to entertainment), as well as for problem-response and compare-contrast texts (compared to descriptive and chronological texts). Implications of the findings are discussed. PMID:25018581

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories

PubMed Central

2013-01-01

Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeOx/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HRTEM). Improved memory characteristics are observed for the Cu/GeOx/W structures as compared to the Al/GeOx/W cross-points owing to AlOx formation at the Al/GeOx interface. The RESET current increases with the increase of the CCs varying from 1 nA to 50 μA for the Cu electrode devices, while the RESET current is high (>1 mA) and independent of CCs varying from 1 nA to 500 μA for the Al electrode devices. An extra formation voltage is needed for the Al/GeOx/W devices, while a low operation voltage of ±2 V is needed for the Cu/GeOx/W cross-point devices. Repeatable bipolar resistive switching characteristics of the Cu/GeOx/W cross-point memory devices are observed with CC varying from 1 nA to 50 μA, and unipolar resistive switching is observed with CC >100 μA. High resistance ratios of 102 to 104 for the bipolar mode (CCs of 1 nA to 50 μA) and approximately 108 for the unipolar mode are obtained for the Cu/GeOx/W cross-points. In addition, repeatable switching cycles and data retention of 103 s are observed under a low current of 1 nA for future low-power, high-density, nonvolatile, nanoscale memory applications. PMID:24305116

Recollection is a continuous process: Evidence from plurality memory receiver operating characteristics.

PubMed

Slotnick, Scott D; Jeye, Brittany M; Dodson, Chad S

2016-01-01

Is recollection a continuous/graded process or a threshold/all-or-none process? Receiver operating characteristic (ROC) analysis can answer this question as the continuous model and the threshold model predict curved and linear recollection ROCs, respectively. As memory for plurality, an item's previous singular or plural form, is assumed to rely on recollection, the nature of recollection can be investigated by evaluating plurality memory ROCs. The present study consisted of four experiments. During encoding, words (singular or plural) or objects (single/singular or duplicate/plural) were presented. During retrieval, old items with the same plurality or different plurality were presented. For each item, participants made a confidence rating ranging from "very sure old", which was correct for same plurality items, to "very sure new", which was correct for different plurality items. Each plurality memory ROC was the proportion of same versus different plurality items classified as "old" (i.e., hits versus false alarms). Chi-squared analysis revealed that all of the plurality memory ROCs were adequately fit by the continuous unequal variance model, whereas none of the ROCs were adequately fit by the two-high threshold model. These plurality memory ROC results indicate recollection is a continuous process, which complements previous source memory and associative memory ROC findings.

[Short-term memory characteristics of vibration intensity tactile perception on human wrist].

PubMed

Hao, Fei; Chen, Li-Juan; Lu, Wei; Song, Ai-Guo

2014-12-25

In this study, a recall experiment and a recognition experiment were designed to assess the human wrist's short-term memory characteristics of tactile perception on vibration intensity, by using a novel homemade vibrotactile display device based on the spatiotemporal combination vibration of multiple micro vibration motors as a test device. Based on the obtained experimental data, the short-term memory span, recognition accuracy and reaction time of vibration intensity were analyzed. From the experimental results, some important conclusions can be made: (1) The average short-term memory span of tactile perception on vibration intensity is 3 ± 1 items; (2) The greater difference between two adjacent discrete intensities of vibrotactile stimulation is defined, the better average short-term memory span human wrist gets; (3) There is an obvious difference of the average short-term memory span on vibration intensity between the male and female; (4) The mechanism of information extraction in short-term memory of vibrotactile display is to traverse the scanning process by comparison; (5) The recognition accuracy and reaction time performance of vibrotactile display compares unfavourably with that of visual and auditory. The results from this study are important for designing vibrotactile display coding scheme.

Does virtual reality have a future for the study of episodic memory in aging?

PubMed

Abichou, Kouloud; La Corte, Valentina; Piolino, Pascale

2017-03-01

Episodic memory is the memory of personally lived events located in time and space, it shapes our identity and allows us to project ourselves into the past and the future. This form of memory is vulnerable to the effects of age and its alteration, hindering the autonomy of the subjects, can predict the evolution towards neurodegenerative disorders. Hence, a better understanding of this type of memory is a priority in the field of public health. Actually, traditional neuropsychological tools are often decontextualized, using simplistic situations that did not require the mobilization of all the characteristics of episodic memory, thus they just offer a partial measure of this complex mnemonic capacity. Nowadays, the virtual reality (VR) is a tool allowing the immersion of subjects in simulations of real situations, rich in spatial and temporal naturalistic contexts. Due to its many characteristics, the VR allows to solve several limitations of the traditional tests. The purpose of this review is to expose studies that investigated episodic memory in normal and Alzheimer's disease using VR in order to address its relevance as a new tool in the future practice of neuropsychology of aging.

Modeling and simulation of floating gate nanocrystal FET devices and circuits

NASA Astrophysics Data System (ADS)

Hasaneen, El-Sayed A. M.

The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to nanocrystal charge has a strong effect on the memory characteristics. Also, the programming operation of the memory cell has been investigated. The tunneling rate from quantum well channel to quantum dot (nanocrystal) gate is calculated. The calculations include various memory parameters, wavefunctions, and energies of quantum well channel and quantum dot gate. The use of floating gate nanocrystal memory as a transistor with a programmable threshold voltage has been demonstrated. The incorporation of FG-NCFETs to design programmable integrated circuit building blocks has been discussed. This includes the design of programmable current and voltage reference circuits. Finally, we demonstrated the design of tunable gain op-amp incorporating FG-NCFETs. Programmable integrated circuit building blocks can be used in intelligent analog and digital systems.

Declarative and nondeclarative memory: multiple brain systems supporting learning and memory.

PubMed

Squire, L R

1992-01-01

Abstract The topic of multiple forms of memory is considered from a biological point of view. Fact-and-event (declarative, explicit) memory is contrasted with a collection of non conscious (non-declarative, implicit) memory abilities including skills and habits, priming, and simple conditioning. Recent evidence is reviewed indicating that declarative and non declarative forms of memory have different operating characteristics and depend on separate brain systems. A brain-systems framework for understanding memory phenomena is developed in light of lesion studies involving rats, monkeys, and humans, as well as recent studies with normal humans using the divided visual field technique, event-related potentials, and positron emission tomography (PET).

Scalability Analysis of Gleipnir: A Memory Tracing and Profiling Tool, on Titan

DOE Office of Scientific and Technical Information (OSTI.GOV)

Janjusic, Tommy; Kartsaklis, Christos; Wang, Dali

2013-01-01

Application performance is hindered by a variety of factors but most notably driven by the well know CPU-memory speed gap (also known as the memory wall). Understanding application s memory behavior is key if we are trying to optimize performance. Understanding application performance properties is facilitated with various performance profiling tools. The scope of profiling tools varies in complexity, ease of deployment, profiling performance, and the detail of profiled information. Specifically, using profiling tools for performance analysis is a common task when optimizing and understanding scientific applications on complex and large scale systems such as Cray s XK7. This papermore » describes the performance characteristics of using Gleipnir, a memory tracing tool, on the Titan Cray XK7 system when instrumenting large applications such as the Community Earth System Model. Gleipnir is a memory tracing tool built as a plug-in tool for the Valgrind instrumentation framework. The goal of Gleipnir is to provide fine-grained trace information. The generated traces are a stream of executed memory transactions mapped to internal structures per process, thread, function, and finally the data structure or variable. Our focus was to expose tool performance characteristics when using Gleipnir with a combination of an external tools such as a cache simulator, Gl CSim, to characterize the tool s overall performance. In this paper we describe our experience with deploying Gleipnir on the Titan Cray XK7 system, report on the tool s ease-of-use, and analyze run-time performance characteristics under various workloads. While all performance aspects are important we mainly focus on I/O characteristics analysis due to the emphasis on the tools output which are trace-files. Moreover, the tool is dependent on the run-time system to provide the necessary infrastructure to expose low level system detail; therefore, we also discuss any theoretical benefits that can be achieved if such modules were present.« less

Does childhood schooling affect old age memory or mental status? Using state schooling laws as natural experiments.

PubMed

Glymour, M M; Kawachi, I; Jencks, C S; Berkman, L F

2008-06-01

The association between schooling and old age cognitive outcomes such as memory disorders is well documented but, because of the threat of reverse causation, controversy persists over whether education affects old age cognition. Changes in state compulsory schooling laws (CSL) are treated as natural experiments (instruments) for estimating the effect of education on memory and mental status among the elderly. Changes in CSL predict changes in average years of schooling completed by children who are affected by the new laws. These educational differences are presumably independent of innate individual characteristics such as IQ. CSL-induced changes in education were used to obtain instrumental variable (IV) estimates of education's effect on memory (n = 10,694) and mental status (n = 9751) for white, non-Hispanic US-born Health and Retirement Survey participants born between 1900 and 1947 who did not attend college. After adjustment for sex, birth year, state of birth and state characteristics, IV estimates of education's effect on memory were large and statistically significant. IV estimates for mental status had very wide confidence intervals, so it was not possible to draw meaningful conclusions about the effect of education on this outcome. Increases in mandatory schooling lead to improvements in performance on memory tests many decades after school completion. These analyses condition on individual states, so differences in memory outcomes associated with CSL changes cannot be attributed to differences between states. Although unmeasured state characteristics that changed contemporaneously with CSL might account for these results, unobserved genetic variation is unlikely to do so.

Does childhood schooling affect old age memory or mental status? Using state schooling laws as natural experiments

PubMed Central

Glymour, M M; Kawachi, I; Jencks, C S; Berkman, L F

2009-01-01

Background The association between schooling and old age cognitive outcomes such as memory disorders is well documented but, because of the threat of reverse causation, controversy persists over whether education affects old age cognition. Changes in state compulsory schooling laws (CSL) are treated as natural experiments (instruments) for estimating the effect of education on memory and mental status among the elderly. Changes in CSL predict changes in average years of schooling completed by children who are affected by the new laws. These educational differences are presumably independent of innate individual characteristics such as IQ. Methods CSL-induced changes in education were used to obtain instrumental variable (IV) estimates of education’s effect on memory (n = 10 694) and mental status (n = 9751) for white, non-Hispanic US-born Health and Retirement Survey participants born between 1900 and 1947 who did not attend college. Results After adjustment for sex, birth year, state of birth and state characteristics, IV estimates of education’s effect on memory were large and statistically significant. IV estimates for mental status had very wide confidence intervals, so it was not possible to draw meaningful conclusions about the effect of education on this outcome. Conclusions Increases in mandatory schooling lead to improvements in performance on memory tests many decades after school completion. These analyses condition on individual states, so differences in memory outcomes associated with CSL changes cannot be attributed to differences between states. Although unmeasured state characteristics that changed contemporaneously with CSL might account for these results, unobserved genetic variation is unlikely to do so. PMID:18477752

Humidity-activated shape memory effect on plasticized starch-based biomaterials.

PubMed

Sessini, Valentina; Arrieta, Marina P; Fernández-Torres, Alberto; Peponi, Laura

2018-01-01

Humidity-activated shape memory behavior of plasticized starch-based films reinforced with the innovative combination of starch nanocrystals (SNCs) and catechin as antioxidant were studied. In a previous work, we reported the processing of gelatinized starch-based films filled with SNCs and catechin as antioxidant agent, and we observed that this novel combination leads to starch-based film with enhanced thermal and mechanical performance. In this work, the humidity-activated shape memory behavior of the previous developed starch-based films was characterized. The moisture loss as well as the moisture absorption were studied since they are essential parameters in humidity-activated shape memory polymers to fix the temporary shape and to recover the original shape, respectively. Therefore, the effect of the incorporation of SNCs and catechin on the humidity-activated shape memory properties of plasticized starch was also studied. Moreover, the effectiveness of catechin to increase the polymer stability under oxidative atmosphere and the thermo-mechanical relaxation of all the starch-based materials were studied. The combination of plasticized starch matrix loaded with both, SNCs and catechin, leads to a multifunctional starch-based films with increased hydrophilicity and with excellent humidity-activated shape memory behavior with interest for potential biomedical applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

An ideal observer analysis of visual working memory.

PubMed

Sims, Chris R; Jacobs, Robert A; Knill, David C

2012-10-01

Limits in visual working memory (VWM) strongly constrain human performance across many tasks. However, the nature of these limits is not well understood. In this article we develop an ideal observer analysis of human VWM by deriving the expected behavior of an optimally performing but limited-capacity memory system. This analysis is framed around rate-distortion theory, a branch of information theory that provides optimal bounds on the accuracy of information transmission subject to a fixed information capacity. The result of the ideal observer analysis is a theoretical framework that provides a task-independent and quantitative definition of visual memory capacity and yields novel predictions regarding human performance. These predictions are subsequently evaluated and confirmed in 2 empirical studies. Further, the framework is general enough to allow the specification and testing of alternative models of visual memory (e.g., how capacity is distributed across multiple items). We demonstrate that a simple model developed on the basis of the ideal observer analysis-one that allows variability in the number of stored memory representations but does not assume the presence of a fixed item limit-provides an excellent account of the empirical data and further offers a principled reinterpretation of existing models of VWM. PsycINFO Database Record (c) 2012 APA, all rights reserved.

Predicting Which Childhood Memories Persist: Contributions of Memory Characteristics

ERIC Educational Resources Information Center

Peterson, Carole; Morris, Gwynn; Baker-Ward, Lynne; Flynn, Susan

2014-01-01

This investigation identified memory-level predictors of the survivability of 4- to 13-year-old children's earliest recollections over a 2-year period. Data previously reported by Peterson, Warren, and Short (2011) were coded for inclusion of emotion terms and thematic, chronological, and contextual narrative coherence. In addition, the…

Retrieval Constraints on the Front End Create Differences in Recollection on a Subsequent Test

ERIC Educational Resources Information Center

Marsh, Richard L.; Meeks, J. Thadeus; Cook, Gabriel I.; Clark-Foos, Arlo; Hicks, Jason L.; Brewer, Gene A.

2009-01-01

Four experiments were conducted to investigate how the cognitive control of memory retrieval selects particular qualitative characteristics as a consequence of instantiating a retrieval mode for recognition memory. Adapting the memory for foils paradigm from Jacoby, Shimizu, Daniels, and Rhodes (Jacoby, L. L., Shimizu, Y., Daniels, K. A., &…

Memories of war: Sources of Vietnam veteran pro- and antiwar political attitudes

Treesearch

David Flores

2014-01-01

The sources of political attitudes are among the most studied phenomena of modern politics. Moving away from the traditional focus on party systems, the demographic characteristics of voters, or political socialization, I consider instead how memory and narrative shape political consciousness. Specifically, I focus on how culturally sanctioned memories of warfare...

Consolidation of Long-Term Memory: Evidence and Alternatives

ERIC Educational Resources Information Center

Meeter, Martijn; Murre, Jaap M. J.

2004-01-01

Memory loss in retrograde amnesia has long been held to be larger for recent periods than for remote periods, a pattern usually referred to as the Ribot gradient. One explanation for this gradient is consolidation of long-term memories. Several computational models of such a process have shown how consolidation can explain characteristics of…

Scene perception and memory revealed by eye movements and receiver-operating characteristic analyses: does a cultural difference truly exist?

PubMed

Evans, Kris; Rotello, Caren M; Li, Xingshan; Rayner, Keith

2009-02-01

Cultural differences have been observed in scene perception and memory: Chinese participants purportedly attend to the background information more than did American participants. We investigated the influence of culture by recording eye movements during scene perception and while participants made recognition memory judgements. Real-world pictures with a focal object on a background were shown to both American and Chinese participants while their eye movements were recorded. Later, memory for the focal object in each scene was tested, and the relationship between the focal object (studied, new) and the background context (studied, new) was manipulated. Receiver-operating characteristic (ROC) curves show that both sensitivity and response bias were changed when objects were tested in new contexts. However, neither the decrease in accuracy nor the response bias shift differed with culture. The eye movement patterns were also similar across cultural groups. Both groups made longer and more fixations on the focal objects than on the contexts. The similarity of eye movement patterns and recognition memory behaviour suggests that both Americans and Chinese use the same strategies in scene perception and memory.

Personality characteristics and affective status related to cognitive test performance and gender in patients with memory complaints.

PubMed

Vestberg, Susanna; Passant, Ulla; Risberg, Jarl; Elfgren, Christina

2007-11-01

The aims are to study personality characteristics of patients with memory complaints and to assess the presence of objective (OMI) versus subjective (SMI) memory impairment, the affective status, as well as potential gender differences. The patients were assessed by means of a neuropsychiatric examination and a neuropsychological test-battery. The Swedish version of the revised NEO Personality Inventory (NEO PI-R) and the Hospital Anxiety and Depression Scale (HADS) were used. The 57 patients (38 women, 19 men, mean age 56.9) differed from the Swedish normative group in three of the five personality factors: neuroticism, extraversion and agreeableness. This was mainly because of the scores of the female patients. Approximately half of the patients had OMI. No differences regarding personality factors or affective status were found between OMI and SMI patients. The female patients scored significantly higher than the male patients on symptoms of anxiety and depression. Neuroticism and symptoms of depression interacted with memory performance and gender. Our findings demonstrate the importance of applying an objective assessment of memory functions and a gender perspective when studying patients with memory complaints.

Classic Russet: A Potato Cultivar with Excellent Fresh Market Characteristics and High Yields of U.S. No. 1 Tubers Suitable for Early Harvest or Full-Season Production.

USDA-ARS?s Scientific Manuscript database

Classic Russet is a medium maturing potato cultivar with rapid tuber bulking making it suitable for early harvest, as well as full-season production. Classic Russet is notable for its attractive tubers with medium russet skin and excellent culinary characteristics. It resulted from a 1995 cross bet...

Teaching through Mnemonics in Elementary School Classrooms

ERIC Educational Resources Information Center

Waite-McGough, Arianne

2012-01-01

Mnemonics and songs are used to help students excel and build are their knowledge in all content areas. This method of teaching and reinforcement of information helps students to commit new information to memory and continue to use this material throughout their lives. Using mnemonics is a lessons way to teach and make the classroom a unique…

Regional Center of Excellence for PTSD: Phoebe Putney Memorial Hospital

DTIC Science & Technology

2011-09-01

hallucinations, and dissociative flashback episodes, including those that occur upon awakening or when intoxicated). Note: in children, trauma...sense of reliving the experience, illusions, hallucinations, and dissociative flashback episodes, including those that occur on awakening or when...thinking about event 2 Moderate, definite but transient dissociative quality, still very aware of surroundings, daydreaming quality 3 Severe

Commentary: Advances in Research on Sourcing-Source Credibility and Reliable Processes for Producing Knowledge Claims

ERIC Educational Resources Information Center

Chinn, Clark A.; Rinehart, Ronald W.

2016-01-01

In our commentary on this excellent set of articles on "Sourcing in the Reading Process," we endeavor to synthesize the findings from the seven articles and discuss future research. We discuss significant contributions related to source memory, source evaluation, use of sources in action and belief, integration of information from…

3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate

NASA Astrophysics Data System (ADS)

Oh, Jae-Sub; Yang, Seong-Dong; Lee, Sang-Youl; Kim, Young-Su; Kang, Min-Ho; Lim, Sung-Kyu; Lee, Hi-Deok; Lee, Ga-Won

2013-08-01

In this paper, a gate-all-around bandgap-engineered silicon-oxide-nitride-oxide-silicon device with a vertical silicon pillar structure and a Ti metal gate are demonstrated for a potential solution to overcome the scaling-down of flash memory device. The devices were fabricated using CMOS-compatible technology and exhibited well-behaved memory characteristics in terms of the program/erase window, retention, and endurance properties. Moreover, the integration of the Ti metal gate demonstrated a significant improvement in the erase characteristics due to the efficient suppression of the electron back tunneling through the blocking oxide.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

NASA Astrophysics Data System (ADS)

Xu, Cheng; Liu, Bo; Chen, Yi-Feng; Liang, Shuang; Song, Zhi-Tang; Feng, Song-Lin; Wan, Xu-Dong; Yang, Zuo-Ya; Xie, Joseph; Chen, Bomy

2008-05-01

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Low-power resistive random access memory by confining the formation of conducting filaments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi-Jen; Lee, Si-Chen, E-mail: sclee@ntu.edu.tw; Shen, Tzu-Hsien

2016-06-15

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistancemore » state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.« less

A grey NGM(1,1, k) self-memory coupling prediction model for energy consumption prediction.

PubMed

Guo, Xiaojun; Liu, Sifeng; Wu, Lifeng; Tang, Lingling

2014-01-01

Energy consumption prediction is an important issue for governments, energy sector investors, and other related corporations. Although there are several prediction techniques, selection of the most appropriate technique is of vital importance. As for the approximate nonhomogeneous exponential data sequence often emerging in the energy system, a novel grey NGM(1,1, k) self-memory coupling prediction model is put forward in order to promote the predictive performance. It achieves organic integration of the self-memory principle of dynamic system and grey NGM(1,1, k) model. The traditional grey model's weakness as being sensitive to initial value can be overcome by the self-memory principle. In this study, total energy, coal, and electricity consumption of China is adopted for demonstration by using the proposed coupling prediction technique. The results show the superiority of NGM(1,1, k) self-memory coupling prediction model when compared with the results from the literature. Its excellent prediction performance lies in that the proposed coupling model can take full advantage of the systematic multitime historical data and catch the stochastic fluctuation tendency. This work also makes a significant contribution to the enrichment of grey prediction theory and the extension of its application span.

Active counter electrode in a-SiC electrochemical metallization memory

NASA Astrophysics Data System (ADS)

Morgan, K. A.; Fan, J.; Huang, R.; Zhong, L.; Gowers, R.; Ou, J. Y.; Jiang, L.; De Groot, C. H.

2017-08-01

Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In a positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher R OFF/R ON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

NASA Astrophysics Data System (ADS)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

From Humans to Rats and Back Again: Bridging the Divide between Human and Animal Studies of Recognition Memory with Receiver Operating Characteristics

ERIC Educational Resources Information Center

Koen, Joshua D.; Yonelinas, Andrew P.

2011-01-01

Receiver operating characteristics (ROCs) have been used extensively to study the processes underlying human recognition memory, and this method has recently been applied in studies of rats. However, the extent to which the results from human and animal studies converge is neither entirely clear, nor is it known how the different methods used to…

Social problem solving, autobiographical memory, trauma, and depression in women with borderline personality disorder and a history of suicide attempts.

PubMed

Maurex, Liselotte; Lekander, Mats; Nilsonne, Asa; Andersson, Eva E; Asberg, Marie; Ohman, Arne

2010-09-01

The primary aim of this study was to compare the retrieval of autobiographical memory and the social problem-solving performance of individuals with borderline personality disorder (BPD) and a history of suicide attempts, with and without concurrent diagnoses of depression and/or post-traumatic stress disorder (PTSD), to that of controls. Additionally, the relationships between autobiographical memory, social problem-solving skills, and various clinical characteristics were examined in the BPD group. Individuals with BPD who had made at least two suicide attempts were compared to controls with regard to specificity of autobiographical memory and social problem-solving skills. Autobiographical memory specificity and social problem-solving skills were further studied in the BPD group by comparing depressed participants to non-depressed participants; and autobiographical memory specificity was also studied by comparing participants with and without PTSD. A total of 47 women with a diagnosis of BPD and 30 controls completed the Autobiographical Memory Test, assessing memory specificity, and the means-end problem solving-procedure, measuring social problem-solving skills. The prevalence of suicidal/self-injurious behaviour, and the exposure to violence, was also assessed in the BPD group. Compared to controls, participants with BPD showed reduced specificity of autobiographical memory, irrespective of either concurrent depression, previous depression, or concurrent PTSD. The depressed BPD group displayed poor problem-solving skills. Further, an association between unspecific memory and poor problem-solving was displayed in the BPD group. Our results confirmed that reduced specificity of autobiographical memory is an important characteristic of BPD individuals with a history of suicide attempt, independent of depression, or PTSD. Reduced specificity of autobiographical memory was further related to poor social problem-solving capacity in the BPD group.

Neuroimaging markers associated with maintenance of optimal memory performance in late-life.

PubMed

Dekhtyar, Maria; Papp, Kathryn V; Buckley, Rachel; Jacobs, Heidi I L; Schultz, Aaron P; Johnson, Keith A; Sperling, Reisa A; Rentz, Dorene M

2017-06-01

Age-related memory decline has been well-documented; however, some individuals reach their 8th-10th decade while maintaining strong memory performance. To determine which demographic and biomarker factors differentiated top memory performers (aged 75+, top 20% for memory) from their peers and whether top memory performance was maintained over 3 years. Clinically normal adults (n=125, CDR=0; age: 79.5±3.57 years) from the Harvard Aging Brain Study underwent cognitive testing and neuroimaging (amyloid PET, MRI) at baseline and 3-year follow-up. Participants were grouped into Optimal (n=25) vs. Typical (n=100) performers using performance on 3 challenging memory measures. Non-parametric tests were used to compare groups. There were no differences in age, sex, or education between Optimal vs. Typical performers. The Optimal group performed better in Processing Speed (p=0.016) and Executive Functioning (p<0.001). Optimal performers had larger hippocampal volumes at baseline compared with Typical Performers (p=0.027) but no differences in amyloid burden (p=0.442). Twenty-three of the 25 Optimal performers had longitudinal data and16 maintained top memory performance while 7 declined. Non-Maintainers additionally declined in Executive Functioning but not Processing Speed. Longitudinally, there were no hippocampal volume differences between Maintainers and Non-Maintainers, however Non-Maintainers exhibited higher amyloid burden at baseline in contrast with Maintainers (p=0.008). Excellent memory performance in late life does not guarantee protection against cognitive decline. Those who maintain an optimal memory into the 8th and 9th decades may have lower levels of AD pathology. Copyright © 2017. Published by Elsevier Ltd.

Coherent Optical Memory with High Storage Efficiency and Large Fractional Delay

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A.

2013-02-01

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Investigation of the Thermomechanical Response of Shape Memory Alloy Hybrid Composite Beams

NASA Technical Reports Server (NTRS)

Davis, Brian A.

2005-01-01

Previous work at NASA Langley Research Center (LaRC) involved fabrication and testing of composite beams with embedded, pre-strained shape memory alloy (SMA) ribbons. That study also provided comparison of experimental results with numerical predictions from a research code making use of a new thermoelastic model for shape memory alloy hybrid composite (SMAHC) structures. The previous work showed qualitative validation of the numerical model. However, deficiencies in the experimental-numerical correlation were noted and hypotheses for the discrepancies were given for further investigation. The goal of this work is to refine the experimental measurement and numerical modeling approaches in order to better understand the discrepancies, improve the correlation between prediction and measurement, and provide rigorous quantitative validation of the numerical model. Thermal buckling, post-buckling, and random responses to thermal and inertial (base acceleration) loads are studied. Excellent agreement is achieved between the predicted and measured results, thereby quantitatively validating the numerical tool.

Coherent optical memory with high storage efficiency and large fractional delay.

PubMed

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A

2013-02-22

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Reversible TAD Chemistry as a Convenient Tool for the Design of (Re)processable PCL-Based Shape-Memory Materials.

PubMed

Defize, Thomas; Riva, Raphaël; Thomassin, Jean-Michel; Alexandre, Michaël; Herck, Niels Van; Prez, Filip Du; Jérôme, Christine

2017-01-01

A chemically cross-linked but remarkably (re)processable shape-memory polymer (SMP) is designed by cross-linking poly(ε-caprolactone) (PCL) stars via the efficient triazolinedione click chemistry, based on the very fast and reversible Alder-ene reaction of 1,2,4-triazoline-3,5-dione (TAD) with indole compounds. Typically, a six-arm star-shaped PCL functionalized by indole moieties at the chain ends is melt-blended with a bisfunctional TAD, directly resulting in a cross-linked PCL-based SMP without the need of post-curing treatment. As demonstrated by the stress relaxation measurement, the labile character of the TAD-indole adducts under stress allows for the solid-state plasticity reprocessing of the permanent shape at will by compression molding of the raw cross-linked material, while keeping excellent shape-memory properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rapid Forgetting of Social Transmission of Food Preferences in Aged Rats: Relationship to Hippocampal CREB Activation

ERIC Educational Resources Information Center

Countryman, Renee A.; Gold, Paul E.

2007-01-01

A major characteristic of age-related changes in memory in rodents is an increase in the rate of forgetting of new information, even when tests given soon after training reveal intact memory. Interference with CREB functions similarly results in rapid decay of memory. Using quantitative immunocytochemistry, the present experiment examined the…

The Cognitive and Behavioral Characteristics of Children with Low Working Memory

ERIC Educational Resources Information Center

Alloway, Tracy Packiam; Gathercole, Susan Elizabeth; Kirkwood, Hannah; Elliott, Julian

2009-01-01

This study explored the cognitive and behavioral profiles of children with working memory impairments. In an initial screening of 3,189 five- to eleven-year-olds, 308 were identified as having very low working memory scores. Cognitive skills (IQ, vocabulary, reading, and math), classroom behavior, and self-esteem were assessed. The majority of the…

A Case Study on Neural Inspired Dynamic Memory Management Strategies for High Performance Computing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vineyard, Craig Michael; Verzi, Stephen Joseph

As high performance computing architectures pursue more computational power there is a need for increased memory capacity and bandwidth as well. A multi-level memory (MLM) architecture addresses this need by combining multiple memory types with different characteristics as varying levels of the same architecture. How to efficiently utilize this memory infrastructure is an unknown challenge, and in this research we sought to investigate whether neural inspired approaches can meaningfully help with memory management. In particular we explored neurogenesis inspired re- source allocation, and were able to show a neural inspired mixed controller policy can beneficially impact how MLM architectures utilizemore » memory.« less

[Anterograde declarative memory and its models].

PubMed

Barbeau, E-J; Puel, M; Pariente, J

2010-01-01

Patient H.M.'s recent death provides the opportunity to highlight the importance of his contribution to a better understanding of the anterograde amnesic syndrome. The thorough study of this patient over five decades largely contributed to shape the unitary model of declarative memory. This model holds that declarative memory is a single system that cannot be fractionated into subcomponents. As a system, it depends mainly on medial temporal lobes structures. The objective of this review is to present the main characteristics of different modular models that have been proposed as alternatives to the unitary model. It is also an opportunity to present different patients, who, although less famous than H.M., helped make signification contribution to the field of memory. The characteristics of the five main modular models are presented, including the most recent one (the perceptual-mnemonic model). The differences as well as how these models converge are highlighted. Different possibilities that could help reconcile unitary and modular approaches are considered. Although modular models differ significantly in many aspects, all converge to the notion that memory for single items and semantic memory could be dissociated from memory for complex material and context-rich episodes. In addition, these models converge concerning the involvement of critical brain structures for these stages: Item and semantic memory, as well as familiarity, are thought to largely depend on anterior subhippocampal areas, while relational, context-rich memory and recollective experiences are thought to largely depend on the hippocampal formation. Copyright © 2010 Elsevier Masson SAS. All rights reserved.

Cultivating Excellence: A Curriculum for Excellence in School Administration. V. School-Based Management.

ERIC Educational Resources Information Center

Lawson, John

This report is the fifth in a series on cultivating excellence in education for the purpose of training and retraining school leaders of the 1990s. The role of school administrators, and especially building principals; the characteristic administrative functions; the step-by-step procedures for implementation; and the advantages and possible…

On the Labile Memory Buffer in the Attentional Blink: Masking the T2 Representation by Onset Transients Mediates the AB

ERIC Educational Resources Information Center

Jannati, Ali; Spalek, Thomas M.; Di Lollo, Vincent

2011-01-01

Report of a second target (T2) is impaired when presented within 500 ms of the first (T1). This attentional blink (AB) is known to cause a delay in T2 processing during which T2 must be stored in a labile memory buffer. We explored the buffer's characteristics using different types of masks after T2. These characteristics were inferred by…

Remembering others: using life scripts to access positive but not negative information.

PubMed

White, Hedy; Coppola, Harmony A; Multunas, Nichole K

2008-01-01

The current research extended to memories of others the life script theory of abstract, idealized mental representations of transitional experiences. Recent and earlier high school graduates rated positive and negative characteristics of popular, average, and unpopular girls from their schools. "Average" girls were rated as higher than average on possessing positive characteristics. Recent but not earlier graduates distinguished between popularity conditions on negative characteristics (negative information is not included in life scripts). For positive characteristics, earlier graduates remembered unpopular girls less favorably (perhaps using stereotypical scripts) than recent graduates remembered them (having greater access to episodic memories of individual girls). A smaller graduation time difference in the same direction resulted for average and popular girls.

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2007-01-01

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

Design of a Multi-Level/Analog Ferroelectric Memory Device

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2006-01-01

Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

The development of academic anesthesiology at the Roswell Park Memorial Institute: James O. Elam, MD, and Elwyn S. Brown, MD.

PubMed

Peppriell, J E; Bacon, D R; Lema, M J; Ament, R; Yearley, C K

1991-04-01

In the early 1950s, Drs. James Elam and Elwyn Brown were recruited to establish the department of anesthesiology at the Roswell Park Memorial Institute. With substantial financial support from both the New York State coffers and the Institute's director, Dr. George Moore, Elam and Brown were able to create a department of anesthesiology renowned for clinical excellence and basic science research. Their work on carbon dioxide elimination led to a redesigning of the soda lime canisters that is still in clinical use. By popularizing mouth-to-mouth rescue breathing, these two anesthesiologists changed the manner in which emergency aid was given and won international acclaim.

Contextual Fear Memories Formed in the Absence of the Dorsal Hippocampus Decay Across Time

PubMed Central

Zelikowsky, Moriel; Bissiere, Stephanie; Fanselow, Michael S.

2012-01-01

Mammals suffering damage to the hippocampus display a dramatic loss of explicit, recently formed memories (retrograde amnesia). In contrast, deficits in the ability to form new memories following hippocampal damage (anterograde amnesia) can be overcome with sufficient training. By combining contextual fear conditioning with lesions of the dorsal hippocampus in rats, we discovered that while animals can form long-term contextual fear memories in the absence of the hippocampus, these memories decay with time, lacking the permanence that is a hallmark characteristic of normal fear memories. These findings indicate that while it is initially possible to acquire explicit memories when the hippocampus is compromised, these memories cannot transfer from a recent to remote state. This suggests that memories formed outside the hippocampus may nevertheless require the hippocampus to undergo systems consolidation, which has important clinical implications for the treatment of memory disorders. PMID:22399761

Do Schacter's Seven Sins of Memory Apply to Ratings of Children's Emotional and Behavioral Functioning?

ERIC Educational Resources Information Center

Renk, Kimberly; Donnelly, Reesa; McKinney, Cliff; Baksh, Elizabeth

2007-01-01

Schacter (2001) proposes that there are seven memory malfunctions that occur in everyday life and that affect individuals' ability to recall occurrences in their lives. Given that these sins affect other areas of memory, it is likely that they may affect the ratings that informants provide when they are recalling characteristics of the emotional…

Teaching for Empowerment and Excellence: The Transformative Potential of Teacher Expectations in an Urban Latina/o Classroom

ERIC Educational Resources Information Center

Liou, Daniel D.; Rojas, Leticia

2016-01-01

The researchers conducted a study to gather information about one Chicano teacher's disposition and perception of high expectations for his Latina/o students and their opportunities to learn. Findings of this paper demonstrate the ways in which institutional memory such as an ethnic studies college education as well as this teacher's…

Regional Center of Excellence for PTSD: Phoebe Putney Memorial Hospital

DTIC Science & Technology

2011-09-01

Acting or feeling as if the traumatic event were recurring (includes a sense of reliving the experience, illusions, hallucinations, and dissociative ...illusions, hallucinations, and dissociative flashback episodes, including those that occur on awakening or when intoxicated). Note: In young children...definite but transient dissociative quality, still very aware of surroundings, daydreaming quality 3 Severe, strongly dissociative (reports images

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. Blair Briggs; Robert W. Schaefer

Richard D. McKnight passed away on 28 August 2013. Dick was known to most for his technical excellence; leadership; and kind, thoughtful demeanor. The authors have attempted to capture, in a few short pages, elements of each of those qualities that defined Dick McKnight. The authors will then conclude with some personal memories of a man they looked to as a dear colleague, mentor, and friend.

Scene perception and memory revealed by eye movements and receiver-operating characteristic analyses: Does a cultural difference truly exist?

PubMed Central

Evans, Kris; Rotello, Caren M.; Li, Xingshan; Rayner, Keith

2009-01-01

Cultural differences have been observed in scene perception and memory: Chinese participants purportedly attend to the background information more than did American participants. We investigated the influence of culture by recording eye movements during scene perception and while participants made recognition memory judgements. Real-world pictures with a focal object on a background were shown to both American and Chinese participants while their eye movements were recorded. Later, memory for the focal object in each scene was tested, and the relationship between the focal object (studied, new) and the background context (studied, new) was manipulated. Receiver-operating characteristic (ROC) curves show that both sensitivity and response bias were changed when objects were tested in new contexts. However, neither the decrease in accuracy nor the response bias shift differed with culture. The eye movement patterns were also similar across cultural groups. Both groups made longer and more fixations on the focal objects than on the contexts. The similarity of eye movement patterns and recognition memory behaviour suggests that both Americans and Chinese use the same strategies in scene perception and memory. PMID:18785074

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

NASA Astrophysics Data System (ADS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-10-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. In comparison to a memory capacitor with a single HfO2 trapping layer, the erase speed of a memory capacitor with a stacked HfO2/Ta2O5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔVFB = 4 V, the device with a stacked HfO2/Ta2O5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO2/Ta2O5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

[Overgeneral autobiographical memory in depressive disorders].

PubMed

Dutra, Tarcísio Gomes; Kurtinaitis, Laila da Camara Lima; Cantilino, Amaury; Vasconcelos, Maria Carolina Souto de; Hazin, Izabel; Sougey, Everton Botelho

2012-01-01

This article aims to review studies focusing on the relationship between overgeneral autobiographical memory and depressive disorders. Such characteristic has attracted attention because of its relationship with a poor ability to solve problems and to imagine the future, as well as with the maintenance and a poor prognosis of depression. Data were collected through a systematic search on LILACS, SciELO, MEDLINE, and IBECS databases, and also on the health sciences records of Portal de Periódicos da Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES), a Brazilian journal database, focusing on articles published between 2000 and 2010. The following keywords were used: memória autobiográfica, supergeneralização da memória autobiográfica, and memória autobiográfica e depressão in Portuguese; and autobiographical memory, overgeneral autobiographical memory, and autobiographical memory and depression in English. Following application of exclusion criteria, a total of 27 studies were reviewed. Overgeneral autobiographical memory has been investigated in several depressive disorders. However, further longitudinal studies are required to confirm the relevant role of this cognitive characteristic in anamnesis and in the treatment of mood disorders.

Epoxy/Polycaprolactone Systems with Triple-Shape Memory Effect: Electrospun Nanoweb with and without Graphene Versus Co-Continuous Morphology

PubMed Central

Fejős, Márta; Molnár, Kolos; Karger-Kocsis, József

2013-01-01

Triple-shape memory epoxy (EP)/polycaprolactone (PCL) systems (PCL content: 23 wt %) with different structures (PCL nanoweb embedded in EP matrix and EP/PCL with co-continuous phase structure) were produced. To set the two temporary shapes, the glass transition temperature (Tg) of the EP and the melting temperature (Tm) of PCL served during the shape memory cycle. An attempt was made to reinforce the PCL nanoweb by graphene nanoplatelets prior to infiltrating the nanoweb with EP through vacuum assisted resin transfer molding. Morphology was analyzed by scanning electron microscopy and Raman spectrometry. Triple-shape memory characteristics were determined by dynamic mechanical analysis in tension mode. Graphene was supposed to act also as spacer between the nanofibers, improving the quality of impregnation with EP. The EP phase related shape memory properties were similar for all systems, while those belonging to PCL phase depended on the structure. Shape fixity of PCL was better without than with graphene reinforcement. The best shape memory performance was shown by the EP/PCL with co-continuous structure. Based on Raman spectrometry results, the characteristic dimension of the related co-continuous network was below 900 nm. PMID:28788342

Influence of Pre-Training Predator Stress on the Expression of c-fos mRNA in the Hippocampus, Amygdala, and Striatum Following Long-Term Spatial Memory Retrieval

PubMed Central

VanElzakker, Michael B.; Zoladz, Phillip R.; Thompson, Vanessa M.; Park, Collin R.; Halonen, Joshua D.; Spencer, Robert L.; Diamond, David M.

2011-01-01

We have studied the influence of pre-training psychological stress on the expression of c-fos mRNA following long-term spatial memory retrieval. Rats were trained to learn the location of a hidden escape platform in the radial-arm water maze, and then their memory for the platform location was assessed 24 h later. Rat brains were extracted 30 min after the 24-h memory test trial for analysis of c-fos mRNA. Four groups were tested: (1) Rats given standard training (Standard); (2) Rats given cat exposure (Predator Stress) 30 min prior to training (Pre-Training Stress); (3) Rats given water exposure only (Water Yoked); and (4) Rats given no water exposure (Home Cage). The Standard trained group exhibited excellent 24 h memory which was accompanied by increased c-fos mRNA in the dorsal hippocampus and basolateral amygdala (BLA). The Water Yoked group exhibited no increase in c-fos mRNA in any brain region. Rats in the Pre-Training Stress group were classified into two subgroups: good and bad memory performers. Neither of the two Pre-Training Stress subgroups exhibited a significant change in c-fos mRNA expression in the dorsal hippocampus or BLA. Instead, stressed rats with good memory exhibited significantly greater c-fos mRNA expression in the dorsolateral striatum (DLS) compared to stressed rats with bad memory. This finding suggests that stressed rats with good memory used their DLS to generate a non-spatial (cue-based) strategy to learn and subsequently retrieve the memory of the platform location. Collectively, these findings provide evidence at a molecular level for the involvement of the hippocampus and BLA in the retrieval of spatial memory and contribute novel observations on the influence of pre-training stress in activating the DLS in response to long-term memory retrieval. PMID:21738501

The cognitive neuroscience of true and false memories.

PubMed

Johnson, Marcia K; Raye, Carol L; Mitchell, Karen J; Ankudowich, Elizabeth

2012-01-01

Of central relevance to the recovered/false memory debate is understanding the factors that cause us to believe that a mental experience is a memory of an actual past experience. According to the source monitoring framework (SMF), memories are attributions that we make about our mental experiences based on their subjective qualities, our prior knowledge and beliefs, our motives and goals, and the social context. From this perspective, we discuss cognitive behavioral studies using both objective (e.g., recognition, source memory) and subjective (e.g., ratings of memory characteristics) measures that provide much information about the encoding, revival and monitoring processes that yield both true and false memories. The chapter also considers how neuroimaging findings, especially from functional magnetic resonance imaging studies, are contributing to our understanding of the relation between memory and reality.

FOREWORD: Shape Memory and Related Technologies

NASA Astrophysics Data System (ADS)

Liu, Yong

2005-10-01

The International Symposium on Shape Memory and Related Technologies (SMART2004) successfully took place in Singapore from November 24 to 26, 2004. SMART2004 aimed to provide a forum for presenting and discussing recent developments in the processing, characterization, application and performance prediction of shape memory materials, particularly shape memory alloys and magnetic shape memory materials. In recent years, we have seen a surge in the research and application of shape memory materials. This is due on the one hand to the successful applications of shape memory alloys (SMAs), particularly NiTi (nitinol), in medical practices and, on the other hand, to the discovery of magnetic shape memory (MSM) materials (or, ferromagnetic shape memory alloys, FSMAs). In recent years, applications of SMAs in various engineering practices have flourished owing to the unique combination of novel properties including high power density related to shape recovery, superelasticity with tunable hysteresis, high damping capacity combined with good fatigue resistance, excellent wear resistance due to unconventional deformation mechanisms (stress-induced phase transformation and martensite reorientation), and excellent biocompatibility and anticorrosion resistance, etc. In~the case of MSMs (or FSMAs), their giant shape change in a relatively low magnetic field has great potential to supplement the traditional actuation mechanisms and to have a great impact on the world of modern technology. Common mechanisms existing in both types of materials, namely thermoelastic phase transformation, martensite domain switching and their controlling factors, are of particular interest to the scientific community. Despite some successful applications, some fundamental issues remain unsatisfactorily understood. This conference hoped to link the fundamental research to engineering practices, and to further identify remaining problems in order to further promote the applications of shape memory materials in various demanding fields. Some top researchers from Asia, Australia, Europe and USA attended the meeting and gave oral presentations on both the fundamentals and applied aspects of SMAs and MSMs. Several prominent experts have delivered invited talks on the damping capacity of SMAs (J Van Humbeeck), SMA thin films (S Miyazaki), MSMs (V Lindross and O Söderberg) and SMA microtubes (Q P Sun). At the end of the Symposium, a panel discussion on various aspects of shape memory materials was held in the Nanyang Technological University. Comments, suggestions, opinions, discussions etc from all participants are greatly appreciated and acknowledged. I would like to thank all the participants for their valuable contributions toward the success of SMART2004, and thank all the session chairpersons for making this Symposium an event full of beneficial discussions. This special issue includes some of the manuscripts submitted to SMART2004. I want to express my deep gratitude to the editorial office of the journal of Smart Materials and Structures and all the referees for their great help in producing this special issue. This symposium has received support from the Institute of Materials (East Asia) and the School of Mechanical and Aerospace Engineering of the Nanyang Technological University. The following sponsors are gratefully acknowledged: Lee Foundation (Singapore) Accelrys Instron (Singapore Pte Ltd).

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw; Chang, Wei-Cheng; Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw

Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding themore » W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.« less

Some-or-none recollection: Evidence from item and source memory.

PubMed

Onyper, Serge V; Zhang, Yaofei X; Howard, Marc W

2010-05-01

Dual-process theory hypothesizes that recognition memory depends on 2 distinguishable memory signals. Recollection reflects conscious recovery of detailed information about the learning episode. Familiarity reflects a memory signal that is not accompanied by a vivid conscious experience but nonetheless enables participants to distinguish recently experienced probe items from novel ones. This dual-process explanation of recognition memory has gained wide acceptance among cognitive neuroscientists and some cognitive psychologists. Nonetheless, its difficulty in providing a quantitatively satisfactory description of performance has precluded a consensus not only regarding the theoretical structure of recognition memory but also about how to best measure recognition accuracy. In 2 experiments we show that neither the standard formulation of dual-process signal detection (DPSD) theory nor a widely used single-process model called the unequal-variance signal-detection (UVSD) model provides a satisfactory explanation of recognition memory across different types of stimuli (words and travel scenes). In the variable-recollection dual-process (VRDP) model, recollection fails for some old probe items, as in standard formulations of DPSD, but gives rise to a continuous distribution of memory strengths when it succeeds. The VRDP can approximate both the DPSD and UVSD. In both experiments it provides a consistently superior fit across materials to the superset of the DPSD and UVSD. The VRDP offers a simple explanation of the form of conjoint item-source judgments, something neither the DPSD nor UVSD accomplishes. The success of the VRDP supports the core assumptions of dual-process theory by providing an excellent quantitative description of recognition performance across materials and response criteria.

Adaptive mesh refinement for characteristic grids

NASA Astrophysics Data System (ADS)

Thornburg, Jonathan

2011-05-01

I consider techniques for Berger-Oliger adaptive mesh refinement (AMR) when numerically solving partial differential equations with wave-like solutions, using characteristic (double-null) grids. Such AMR algorithms are naturally recursive, and the best-known past Berger-Oliger characteristic AMR algorithm, that of Pretorius and Lehner (J Comp Phys 198:10, 2004), recurses on individual "diamond" characteristic grid cells. This leads to the use of fine-grained memory management, with individual grid cells kept in two-dimensional linked lists at each refinement level. This complicates the implementation and adds overhead in both space and time. Here I describe a Berger-Oliger characteristic AMR algorithm which instead recurses on null slices. This algorithm is very similar to the usual Cauchy Berger-Oliger algorithm, and uses relatively coarse-grained memory management, allowing entire null slices to be stored in contiguous arrays in memory. The algorithm is very efficient in both space and time. I describe discretizations yielding both second and fourth order global accuracy. My code implementing the algorithm described here is included in the electronic supplementary materials accompanying this paper, and is freely available to other researchers under the terms of the GNU general public license.

Visuospatial declarative learning despite profound verbal declarative amnesia in Korsakoff's syndrome.

PubMed

Oudman, Erik; Postma, Albert; Nijboer, Tanja C W; Wijnia, Jan W; Van der Stigchel, Stefan

2017-03-20

Korsakoff's syndrome (KS) is a neuropsychiatric disorder characterised by severe amnesia. Although the presence of impairments in memory has long been acknowledged, there is a lack of knowledge about the precise characteristics of declarative memory capacities in order to implement memory rehabilitation. In this study, we investigated the extent to which patients diagnosed with KS have preserved declarative memory capacities in working memory, long-term memory encoding or long-term memory recall operations, and whether these capacities are most preserved for verbal or visuospatial content. The results of this study demonstrate that patients with KS have compromised declarative memory functioning on all memory indices. Performance was lowest for the encoding operation compared to the working memory and delayed recall operation. With respect to the content, visuospatial memory was relatively better preserved than verbal memory. All memory operations functioned suboptimally, although the most pronounced disturbance was found in verbal memory encoding. Based on the preserved declarative memory capacities in patients, visuospatial memory can form a more promising target for compensatory memory rehabilitation than verbal memory. It is therefore relevant to increase the number of spatial cues in memory rehabilitation for KS patients.

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

PubMed

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

2013-09-06

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

[Memory characteristic in boys with attention deficit/hyperactivity disorder comorbid learning disability].

PubMed

Wu, Zhaomin; Wang, Na; Qian, Qiujin; Yang, Li; Qian, Ying; Liu, Lu; Liu, Yuxin; Cheng, Jia; Sun, Li; Cao, Qingjiu; Wang, Yufeng

2014-06-10

To explore the memory characteristic in boys with attention-deficit/hyperactivity disorder (ADHD) plus learning disability (LD). A total of 97 ADHD boys with comorbid LD (ADHD+LD), 97 ADHD boys without comorbid LD (ADHD-LD) and 97 healthy controls (based on the criteria of DSM-IV) were recruited from the outpatient clinic of Peking University Sixth Hospital from December 2003 to September 2012. Individuals across three groups were matched by ages, intelligence quotient (IQ) and ADHD subtypes. The Wechsler Memory Scale (WMS) was used to access the characteristics of several memory domains. ADHD +LD group performed the worst and control group the best in memory quotient (MQ) (90 ± 15 vs 98 ± 14 & 104 ± 14) and long-term memory domain ((36.0 ± 10.2) vs (42.1 ± 7.8) & (45.6 ± 6.7) score, all P < 0.05) . ADHD+LD group scored significantly lower than the control group in short-term memory ( (53.0 ± 9.2) vs (58.0 ± 9.7) score, P < 0.05) and immediate memory domains ((10.0 ± 3.3) vs (11.3 ± 3.5) score, P < 0.05). However, ADHD+LD group scored slightly but not significantly lower than the ADHD-LD group ((54.9 ± 10.7),(10.8 ± 3.2) score, P > 0.05). In most subscales of WMS, ADHD+LD group scored significantly lower than both ADHD-LD and control group in current information and orientation, mental control (1→100) , mental control (100→1) and associate learning subscales ( (8.8 ± 3.1) vs (10.0 ± 3.0) & (9.9 ± 2.3) score, (8.7 ± 4.1) vs (10.0 ± 3.9) & (11.1 ± 3.6) score, (10.7 ± 3.9) vs (12.9 ± 2.8) & (13.7 ± 2.2) score, (9.8 ± 3.1) vs (10.8 ± 2.6) & (11.1 ± 2.1) score, all P < 0.05) . In mental control (accumulation) subscale, all pairwise comparisons were statistically significant (all P < 0.05) . In subscales of figure memory, visual reproduction and digit span, ADHD+LD scored significantly lower than the control group (all P < 0.05), but not the ADHD-LD group (all P > 0.05). Boys with ADHD comorbid LD show deficits in overall memory function and long-term memory while short-term memory is partially damaged. Impairment in immediate memory is not detected.

High-performance Raman memory with spatio-temporal reversal

NASA Astrophysics Data System (ADS)

Vernaz-Gris, Pierre; Tranter, Aaron D.; Everett, Jesse L.; Leung, Anthony C.; Paul, Karun V.; Campbell, Geoff T.; Lam, Ping Koy; Buchler, Ben C.

2018-05-01

A number of techniques exist to use an ensemble of atoms as a quantum memory for light. Many of these propose to use backward retrieval as a way to improve the storage and recall efficiency. We report on a demonstration of an off-resonant Raman memory that uses backward retrieval to achieve an efficiency of $65\\pm6\\%$ at a storage time of one pulse duration. The memory has a characteristic decay time of 60 $\\mu$s, corresponding to a delay-bandwidth product of $160$.

Plated wire memory subsystem

NASA Technical Reports Server (NTRS)

Carpenter, K. H.

1974-01-01

The design, construction, and test history of a 4096 word by 18 bit random access NDRO Plated Wire Memory for use in conjunction with a spacecraft input/output and central processing unit is reported. A technical and functional description is given along with diagrams illustrating layout and systems operation. Test data is shown on the procedures and results of system level and memory stack testing, and hybrid circuit screening. A comparison of the most significant physical and performance characteristics of the memory unit versus the specified requirements is also included.

Effects of saccadic bilateral eye movements on episodic and semantic autobiographical memory fluency.

PubMed

Parker, Andrew; Parkin, Adam; Dagnall, Neil

2013-01-01

Performing a sequence of fast saccadic horizontal eye movements has been shown to facilitate performance on a range of cognitive tasks, including the retrieval of episodic memories. One explanation for these effects is based on the hypothesis that saccadic eye movements increase hemispheric interaction, and that such interactions are important for particular types of memory. The aim of the current research was to assess the effect of horizontal saccadic eye movements on the retrieval of both episodic autobiographical memory (event/incident based memory) and semantic autobiographical memory (fact based memory) over recent and more distant time periods. It was found that saccadic eye movements facilitated the retrieval of episodic autobiographical memories (over all time periods) but not semantic autobiographical memories. In addition, eye movements did not enhance the retrieval of non-autobiographical semantic memory. This finding illustrates a dissociation between the episodic and semantic characteristics of personal memory and is considered within the context of hemispheric contributions to episodic memory performance.

Effects of Saccadic Bilateral Eye Movements on Episodic and Semantic Autobiographical Memory Fluency

PubMed Central

Parker, Andrew; Parkin, Adam; Dagnall, Neil

2013-01-01

Performing a sequence of fast saccadic horizontal eye movements has been shown to facilitate performance on a range of cognitive tasks, including the retrieval of episodic memories. One explanation for these effects is based on the hypothesis that saccadic eye movements increase hemispheric interaction, and that such interactions are important for particular types of memory. The aim of the current research was to assess the effect of horizontal saccadic eye movements on the retrieval of both episodic autobiographical memory (event/incident based memory) and semantic autobiographical memory (fact based memory) over recent and more distant time periods. It was found that saccadic eye movements facilitated the retrieval of episodic autobiographical memories (over all time periods) but not semantic autobiographical memories. In addition, eye movements did not enhance the retrieval of non-autobiographical semantic memory. This finding illustrates a dissociation between the episodic and semantic characteristics of personal memory and is considered within the context of hemispheric contributions to episodic memory performance. PMID:24133435

Construct validity of the Free and Cued Selective Reminding Test in older adults with memory complaints.

PubMed

Clerici, Francesca; Ghiretti, Roberta; Di Pucchio, Alessandra; Pomati, Simone; Cucumo, Valentina; Marcone, Alessandra; Vanacore, Nicola; Mariani, Claudio; Cappa, Stefano Francesco

2017-06-01

The Free and Cued Selective Reminding Test (FCSRT) is the memory test recommended by the International Working Group on Alzheimer's disease (AD) for the detection of amnestic syndrome of the medial temporal type in prodromal AD. Assessing the construct validity and internal consistency of the Italian version of the FCSRT is thus crucial. The FCSRT was administered to 338 community-dwelling participants with memory complaints (57% females, age 74.5 ± 7.7 years), including 34 with AD, 203 with Mild Cognitive Impairment, and 101 with Subjective Memory Impairment. Internal Consistency was estimated using Cronbach's alpha coefficient. To assess convergent validity, five FCSRT scores (Immediate Free Recall, Immediate Total Recall, Delayed Free Recall, Delayed Total Recall, and Index of Sensitivity of Cueing) were correlated with three well-validated memory tests: Story Recall, Rey Auditory Verbal Learning test, and Rey Complex Figure (RCF) recall (partial correlation analysis). To assess divergent validity, a principal component analysis (an exploratory factor analysis) was performed including, in addition to the above-mentioned memory tasks, the following tests: Word Fluencies, RCF copy, Clock Drawing Test, Trail Making Test, Frontal Assessment Battery, Raven Coloured Progressive Matrices, and Stroop Colour-Word Test. Cronbach's alpha coefficients for immediate recalls (IFR and ITR) and delayed recalls (DFR and DTR) were, respectively, .84 and .81. All FCSRT scores were highly correlated with those of the three well-validated memory tests. The factor analysis showed that the FCSRT does not load on the factors saturated by non-memory tests. These findings indicate that the FCSRT has a good internal consistency and has an excellent construct validity as an episodic memory measure. © 2015 The British Psychological Society.

Core neuropsychological characteristics of children and adolescents with 22q11.2 deletion.

PubMed

Jacobson, C; Shearer, J; Habel, A; Kane, F; Tsakanikos, E; Kravariti, E

2010-08-01

The 22q11.2 deletion syndrome (22qDS) confers high risk for intellectual disability and neuropsychological/academic impairment, although a minority of patients show average intelligence. Intellectual heterogeneity and the high prevalence of psychiatric diagnoses in earlier studies may have obscured the prototypical neuropsychological profile in 22qDS. We examined intelligence, memory, reading and mathematical processes in 31 children/adolescents with 22qDS, selected for educational underachievement and an absence of psychiatric diagnoses, using standardised, psychometrically matched instruments that specify how typical a score is for a given intelligence quotient (IQ). Corroborating earlier findings, verbal IQ was significantly superior to performance IQ; verbal memory and basic reading were relative strengths; and visual/spatial memory was a relative weakness. All four findings transcended performance characteristics that are typical of low-IQ individuals. Rote learning yielded the highest score; reading comprehension, numerical operations and mathematical reasoning were among the lowest-performed academic domains. Albeit in the expected direction, performance in the respective components could not be clearly differentiated from what is IQ-appropriate. A superiority of verbal intelligence over non-verbal intelligence, relative strengths in verbal memory and basic reading, and a relative weakness in visual/spatial memory are likely to be core characteristics of children/adolescents with 22qDS, transcending performance features that are typical of individuals with low IQ.

A New Strategy to Prepare Polymer-based Shape Memory Elastomers.

PubMed

Song, Shijie; Feng, Jiachun; Wu, Peiyi

2011-10-04

A new strategy that utilizes the microphase separation of block copolymer and phase transition of small molecules for preparing polymer-based shape memory elastomer has been proposed. According to this strategy, a novel kind of shape memory elastomer comprising styrene-b-(ethylene-co-butylene)-b-styrene (SEBS) and paraffin has been prepared. Because paraffins are midblock-selective molecules for SEBS, they will preferentially enter and swell EB blocks supporting paraffins as an excellent switch phase for shape memory effect. Microstructures of SEBS/paraffin composites have been characterized by transmission electron microscopy, polarized light microscopy, and differential scanning calorimetry. The composites demonstrate various phase morphologies with regard to different paraffin loading. It has been found that under low paraffin loading, all the paraffins precisely embed in and swell EB-rich domains. While under higher loading, part of the paraffins become free and a larger-scaled phase separation has been observed. However, within wide paraffin loadings, all composites show good shape fixing, shape recovery performances, and improved tensile properties. Compared to the reported methods for shape memory elastomers preparation, this method not only simplifies the fabrication procedure from raw materials to processing but also offers a controllable approach for the optimization of shape memory properties as well as balancing the rigidity and softness of the material. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In Search of Excellence--For Ordinary People. [Parts 1 and 2]. Innovation Abstracts, Volume VI, Numbers 22 and 32.

ERIC Educational Resources Information Center

DeHart, A. Robert

1984-01-01

"In Search of Excellence," by Peters and Waterman identifies one characteristic of corporate excellence as "unusual effort on the part of apparently ordinary employees." The community college has many students who fit into the category of "ordinary people." Their academic performance can be maximized by recognizing their individual differences,…

Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation

NASA Astrophysics Data System (ADS)

Kim, Tae-Wan; Baek, Il-Jin; Cho, Won-Ju

2018-02-01

In this study, we employed microwave irradiation (MWI) at low temperature in the fabrication of solution-processed AlZnSnO (AZTO) resistive random access memory (ReRAM) devices with a structure of Ti/AZTO/Pt and compared the memory characteristics with the conventional thermal annealing (CTA) process. Typical bipolar resistance switching (BRS) behavior was observed in AZTO ReRAM devices treated with as-deposited (as-dep), CTA and MWI. In the low resistance state, the Ohmic conduction mechanism describes the dominant conduction of these devices. On the other hand, the trap-controlled space charge limited conduction (SCLC) mechanism predominates in the high resistance state. The AZTO ReRAM devices processed with MWI showed larger memory windows, uniform distribution of resistance state and operating voltage, stable DC durability (>103 cycles) and stable retention characteristics (>104 s). In addition, the AZTO ReRAM devices treated with MWI exhibited multistage storage characteristics by modulating the amplitude of the reset bias, and eight distinct resistance levels were obtained with stable retention capability.

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure

NASA Astrophysics Data System (ADS)

Kim, Hyung Jun; Park, Daehoon; Yang, Paul; Beom, Keonwon; Kim, Min Ju; Shin, Chansun; Kang, Chi Jung; Yoon, Tae-Sik

2018-06-01

A crossbar array of Pt/CeO2/Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio of ∼103, corresponding to wide dynamic range of synaptic weight modulation as potentiation and depression with respect to the voltage polarity. In addition, it presented timing-dependent responses such as paired-pulse facilitation and the short-term to long-term memory transition by increasing amplitude, width, and repetition number of voltage pulse and reducing the interval time between pulses. The memory loss with a time was fitted with a stretched exponential relaxation model, revealing the relation of memory stability with the input stimuli strength. The resistance change was further enhanced but its stability got worse as increasing measurement temperature, indicating that the resistance was changed as a result of voltage- and temperature-dependent electrical charging and discharging to alter the energy barrier for charge transport. These detailed synaptic characteristics demonstrated the potential of crossbar array of Pt/CeO2/Pt memristors as artificial synapses in highly connected neuron-synapse network.

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure.

PubMed

Kim, Hyung Jun; Park, Daehoon; Yang, Paul; Beom, Keonwon; Kim, Min Ju; Shin, Chansun; Kang, Chi Jung; Yoon, Tae-Sik

2018-06-29

A crossbar array of Pt/CeO 2 /Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio of ∼10 3 , corresponding to wide dynamic range of synaptic weight modulation as potentiation and depression with respect to the voltage polarity. In addition, it presented timing-dependent responses such as paired-pulse facilitation and the short-term to long-term memory transition by increasing amplitude, width, and repetition number of voltage pulse and reducing the interval time between pulses. The memory loss with a time was fitted with a stretched exponential relaxation model, revealing the relation of memory stability with the input stimuli strength. The resistance change was further enhanced but its stability got worse as increasing measurement temperature, indicating that the resistance was changed as a result of voltage- and temperature-dependent electrical charging and discharging to alter the energy barrier for charge transport. These detailed synaptic characteristics demonstrated the potential of crossbar array of Pt/CeO 2 /Pt memristors as artificial synapses in highly connected neuron-synapse network.

Multi-modal imaging predicts memory performance in normal aging and cognitive decline.

PubMed

Walhovd, K B; Fjell, A M; Dale, A M; McEvoy, L K; Brewer, J; Karow, D S; Salmon, D P; Fennema-Notestine, C

2010-07-01

This study (n=161) related morphometric MR imaging, FDG-PET and APOE genotype to memory scores in normal controls (NC), mild cognitive impairment (MCI) and Alzheimer's disease (AD). Stepwise regression analyses focused on morphometric and metabolic characteristics of the episodic memory network: hippocampus, entorhinal, parahippocampal, retrosplenial, posterior cingulate, precuneus, inferior parietal, and lateral orbitofrontal cortices. In NC, hippocampal metabolism predicted learning; entorhinal metabolism predicted recognition; and hippocampal metabolism predicted recall. In MCI, thickness of the entorhinal and precuneus cortices predicted learning, while parahippocampal metabolism predicted recognition. In AD, posterior cingulate cortical thickness predicted learning, while APOE genotype predicted recognition. In the total sample, hippocampal volume and metabolism, cortical thickness of the precuneus, and inferior parietal metabolism predicted learning; hippocampal volume and metabolism, parahippocampal thickness and APOE genotype predicted recognition. Imaging methods appear complementary and differentially sensitive to memory in health and disease. Medial temporal and parietal metabolism and morphometry best explained memory variance. Medial temporal characteristics were related to learning, recall and recognition, while parietal structures only predicted learning. Copyright 2008. Published by Elsevier Inc.

Organic transistor memory with a charge storage molecular double-floating-gate monolayer.

PubMed

Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai

2015-05-13

A flexible, low-voltage, and nonvolatile memory device was fabricated by implanting a functional monolayer on an aluminum oxide dielectric surface in a pentacene-based organic transistor. The monolayer-forming molecule contains a phosphonic acid group as the anchoring moiety and a charge-trapping core group flanked between two alkyl chain spacers as the charge trapping site. The memory characteristics strongly depend on the monolayer used due to the localized charge-trapping capability for different core groups, including the diacetylenic (DA) unit as the hole carrier trap, the naphthalenetetracarboxyldiimide (ND) unit as the electron carrier trap, and the one with both DA and ND units present, respectively. The device with the monolayer carrying both DA and ND groups has a larger memory window than that for the one containing DA only and a longer retention time than that for the one containing DA or ND only, giving a memory window of 1.4 V and a retention time around 10(9) s. This device with hybrid organic monolayer/inorganic dielectrics also exhibited rather stable device characteristics upon bending of the polymeric substrate.

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

PubMed

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Method for fabricating uranium alloy articles without shape memory effects

DOEpatents

Banker, John G.

1985-01-01

Uranium-rich niobium and niobium-zirconium alloys possess a characteristic known as shape memory effect wherein shaped articles of these alloys recover their original shape when heated. The present invention circumvents this memory behavior by forming the alloys into the desired configuration at elevated temperatures with "cold" matched dies and maintaining the shaped articles between the dies until the articles cool to ambient temperature.

Method for fabricating uranium alloy articles without shape memory effects

DOEpatents

Banker, J.G.

1980-05-21

Uranium-rich niobium and niobium-zirconium alloys possess a characteristic known as shape memory effect wherein shaped articles of these alloys recover their original shape when heated. The present invention circumvents this memory behavior by forming the alloys into the desired configuration at elevated temperatures with cold matched dies and maintaining the shaped articles between the dies until the articles cool to ambient temperature.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

SnO2-based memristors and the potential synergies of integrating memristors with MEMS

NASA Astrophysics Data System (ADS)

Zubia, David; Almeida, Sergio; Talukdar, Arka; Mireles, Jose; MacDonald, Eric

2012-06-01

Memristors, usually in the form metal/metal-oxide/metal, have attracted much attention due to their potential application for non-volatile memory. Their simple structure and ease of fabrication make them good candidates for dense memory with projections of 22 terabytes per wafer. Excellent switching times of ~10 ns, memory endurance of >109 cycles, and extrapolated retention times of >10 yrs have been reported. Interestingly, memristors use the migration of ions to change their resistance in response to charge flow, and can therefore measure and remember the amount of current that has flowed. This is similar to many MEMS devices in which the motion of mass is an operating principle of the device. Memristors are also similar to MEMS in the sense that they can both be resistant to radiation effects. Memristors are radiation tolerant since information is stored as a structural change and not as electronic charge. Functionally, a MEMS device's sensitivity to radiation is concomitant to the role that the dielectric layers play in the function of the device. This is due to radiation-induced trapped charge in the dielectrics which can alter device performance and in extreme cases cause failure. Although different material systems have been investigated for memristors, SnO2 has received little attention even though it demonstrates excellent electronic properties and a high resistance to displacement damage from radiation due to a large Frenkel defect energy (7 eV) compared its bandgap (3.6 eV). This talk discusses recent research on SnO2-based memristors and the potential synergies of integrating memristors with MEMS.

Development of a measure for the assessment of peer-related positive emotional memories.

PubMed

Ferreira, Cláudia; Cunha, Marina; Marta-Simões, Joana; Duarte, Cristiana; Matos, Marcela; Pinto-Gouveia, José

2018-03-01

Previous research has demonstrated a link between early experiences of warmth, safeness, and soothing, and positive feelings, health, and well-being outcomes. Although the impact of positive parent-related early relationships and its posterior recall is well documented, research on the recall of warmth and safeness experiences within early peer relationships remains scarce. In fact, it is considered that the protective role of early positive peer relationships deserves intensive research; however, a specific measure that assesses this construct is still to be created. This study describes the development and validation of a new measure designed to assess the recall of early experiences of warmth, safeness, and affection in relation to peers (EMWSS-peers). Distinct samples, comprising individuals of both genders aged between 18 and 68 years old, were used to test the EMWSS-peers factorial structure through principal axis factoring (PAF) and confirmatory factor analysis (CFA), and to examine its psychometric properties. Principal axis factoring's results indicated that the 12-item scale presents a one-factor structure explaining a total of 71.50% of the variance. The CFA confirmed the plausibility of this structure. The EMWSS-peers also presented excellent internal consistency and construct, concurrent, and divergent validities. The EMWSS-peers seems to be a new avenue for the study of memories of early experiences with friends and colleagues and may entail a relevant contribution to clinical and research fields, particularly for upcoming investigations on the relationship of peer-related affiliative memories with well-being and mental health. The EMWSS-peers is a specific measure to assess the recall of warmth and safeness in early peer relationships. The EMWSS-peers is a brief, robust, and reliable self-report instrument. The EMWSS-peers presented excellent internal consistency and construct, concurrent, and divergent validities. The EMWSS-peers may open a new avenue for the study of memories of early peer-related experiences, with potential clinical and research implications. © 2017 The British Psychological Society.

Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

DOE PAGES

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; ...

2015-03-17

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge 2Sb 2Te 5) and amore » heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.« less

A Grey NGM(1,1, k) Self-Memory Coupling Prediction Model for Energy Consumption Prediction

PubMed Central

Guo, Xiaojun; Liu, Sifeng; Wu, Lifeng; Tang, Lingling

2014-01-01

Energy consumption prediction is an important issue for governments, energy sector investors, and other related corporations. Although there are several prediction techniques, selection of the most appropriate technique is of vital importance. As for the approximate nonhomogeneous exponential data sequence often emerging in the energy system, a novel grey NGM(1,1, k) self-memory coupling prediction model is put forward in order to promote the predictive performance. It achieves organic integration of the self-memory principle of dynamic system and grey NGM(1,1, k) model. The traditional grey model's weakness as being sensitive to initial value can be overcome by the self-memory principle. In this study, total energy, coal, and electricity consumption of China is adopted for demonstration by using the proposed coupling prediction technique. The results show the superiority of NGM(1,1, k) self-memory coupling prediction model when compared with the results from the literature. Its excellent prediction performance lies in that the proposed coupling model can take full advantage of the systematic multitime historical data and catch the stochastic fluctuation tendency. This work also makes a significant contribution to the enrichment of grey prediction theory and the extension of its application span. PMID:25054174

Is bigger always better? A critical appraisal of the use of volumetric analysis in the study of the hippocampus.

PubMed

Roth, Timothy C; Brodin, Anders; Smulders, Tom V; LaDage, Lara D; Pravosudov, Vladimir V

2010-03-27

A well-developed spatial memory is important for many animals, but appears especially important for scatter-hoarding species. Consequently, the scatter-hoarding system provides an excellent paradigm in which to study the integrative aspects of memory use within an ecological and evolutionary framework. One of the main tenets of this paradigm is that selection for enhanced spatial memory for cache locations should specialize the brain areas involved in memory. One such brain area is the hippocampus (Hp). Many studies have examined this adaptive specialization hypothesis, typically relating spatial memory to Hp volume. However, it is unclear how the volume of the Hp is related to its function for spatial memory. Thus, the goal of this article is to evaluate volume as a main measurement of the degree of morphological and physiological adaptation of the Hp as it relates to memory. We will briefly review the evidence for the specialization of memory in food-hoarding animals and discuss the philosophy behind volume as the main currency. We will then examine the problems associated with this approach, attempting to understand the advantages and limitations of using volume and discuss alternatives that might yield more specific hypotheses. Overall, there is strong evidence that the Hp is involved in the specialization of spatial memory in scatter-hoarding animals. However, volume may be only a coarse proxy for more relevant and subtle changes in the structure of the brain underlying changes in behaviour. To better understand the nature of this brain/memory relationship, we suggest focusing on more specific and relevant features of the Hp, such as the number or size of neurons, variation in connectivity depending on dendritic and axonal arborization and the number of synapses. These should generate more specific hypotheses derived from a solid theoretical background and should provide a better understanding of both neural mechanisms of memory and their evolution.

Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

NASA Astrophysics Data System (ADS)

Chen, Zhe; Li, Haitong; Chen, Hong-Yu; Chen, Bing; Liu, Rui; Huang, Peng; Zhang, Feifei; Jiang, Zizhen; Ye, Hongfei; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng; Wong, H.-S. Philip; Yu, Shimeng

2016-05-01

Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

Influence of magnet eddy current on magnetization characteristics of variable flux memory machine

NASA Astrophysics Data System (ADS)

Yang, Hui; Lin, Heyun; Zhu, Z. Q.; Lyu, Shukang

2018-05-01

In this paper, the magnet eddy current characteristics of a newly developed variable flux memory machine (VFMM) is investigated. Firstly, the machine structure, non-linear hysteresis characteristics and eddy current modeling of low coercive force magnet are described, respectively. Besides, the PM eddy current behaviors when applying the demagnetizing current pulses are unveiled and investigated. The mismatch of the required demagnetization currents between the cases with or without considering the magnet eddy current is identified. In addition, the influences of the magnet eddy current on the demagnetization effect of VFMM are analyzed. Finally, a prototype is manufactured and tested to verify the theoretical analyses.

Beyond memory problems: multiple obstacles to health and quality of life in older people seeking help for subjective memory complaints.

PubMed

Rotenberg Shpigelman, Shlomit; Sternberg, Shelley; Maeir, Adina

2017-08-29

Preliminary evidence suggests that older people who seek medical help for subjective memory complaints (SMC) may be at risk for depression, poor quality of life (QoL), and functional limitations. This study aims to: (1) further investigate bio-psycho-social characteristics, participation in personally meaningful activities and QoL of help-seekers; and (2) examine the relationship of these characteristics to QoL, and explore the unique contribution of participation to QoL. Cognitive, meta-cognitive, emotional, social, participation, and QoL measures were used to compare 51 help-seekers referred from geriatric clinics to 40 age-matched controls who did not seek help for memory problems. Help-seekers exhibited lower participation and QoL, had lower mean cognitive scores, reported more memory mistakes and negative memory-beliefs, more depression, worse self-efficacy, and less positive social interaction than non-help-seekers. Quality of life in help-seekers was significantly correlated with most variables. Participation contributed to the explained variance of QoL in help-seekers, beyond that accounted for by cognition and emotional status. Help-seekers with SMC exhibited a complex health condition that includes not only SMC, but also objective memory impairment, depression, functional restrictions, negative memory beliefs, low perception of memory abilities, reduced self-efficacy and insufficient social interactions, all associated with lower QoL. This multi-faceted condition should be considered in the treatment of help-seekers. Implications for Rehabilitation Older people who seek help for subjective memory complaints may be facing a larger problem involving bio-psycho-social factors, affecting participation in meaningful activities and quality of life. Quality of life may be improved via treatment of depression, functional restrictions, memory beliefs, self-efficacy, and positive social interactions. Participation in meaningful activities is an especially important target for improving health and quality of life in this population. Interventions for older adults seeking help for subjective memory complaints will benefit from adopting a bio-psycho-social rehabilitation perspective.

Memory-related subjective cognitive symptoms in the adult population: prevalence and associated factors - results of the LIFE-Adult-Study.

PubMed

Luck, Tobias; Roehr, Susanne; Rodriguez, Francisca S; Schroeter, Matthias L; Witte, A Veronica; Hinz, Andreas; Mehnert, Anja; Engel, Christoph; Loeffler, Markus; Thiery, Joachim; Villringer, Arno; Riedel-Heller, Steffi G

2018-05-21

Subjectively perceived memory problems (memory-related Subjective Cognitive Symptoms/SCS) can be an indicator of a pre-prodromal or prodromal stage of a neurodegenerative disease such as Alzheimer's disease. We therefore sought to provide detailed empirical information on memory-related SCS in the dementia-free adult population including information on prevalence rates, associated factors and others. We studied 8834 participants (40-79 years) of the population-based LIFE-Adult-Study. Weighted prevalence rates with confidence intervals (95%-CI) were calculated. Associations of memory-related SCS with participants' socio-demographic characteristics, physical and mental comorbidity, and cognitive performance (Verbal Fluency Test Animals, Trail-Making-Test, CERAD Wordlist tests) were analyzed. Prevalence of total memory-related SCS was 53.0% (95%-CI = 51.9-54.0): 26.0% (95%-CI = 25.1-27.0) of the population had a subtype without related concerns, 23.6% (95%-CI = 22.7-24.5) a subtype with some related concerns, and 3.3% (95%-CI = 2.9-3.7) a subtype with strong related concerns. Report of memory-related SCS was unrelated to participants' socio-demographic characteristics, physical comorbidity (except history of stroke), depressive symptomatology, and anxiety. Adults with and without memory-related SCS showed no significant difference in cognitive performance. About one fifth (18.1%) of the participants with memory-related SCS stated that they did consult/want to consult a physician because of their experienced memory problems. Memory-related SCS are very common and unspecific in the non-demented adult population aged 40-79 years. Nonetheless, a substantial proportion of this population has concerns related to experienced memory problems and/or seeks help. Already available information on additional features associated with a higher likelihood of developing dementia in people with SCS may help clinicians to decide who should be monitored more closely.

Steltzer Receives 2013 Sulzman Award for Excellence in Education and Mentoring: Response

NASA Astrophysics Data System (ADS)

Steltzer, Heidi

2014-07-01

I am honored to receive the AGU Sulzman Award and am especially honored to be the first recipient of this award established in memory of Elizabeth Sulzman. At the 2013 Fall Meeting, I learned about the thought and work that went into establishing this award and want to thank all who contributed to its establishment. Awards that recognize outstanding female scientists are needed.

Current-voltage characteristics of organic semiconductors: Interfacial control between organic layers and electrodes

NASA Astrophysics Data System (ADS)

Kondo, Takeshi

2007-12-01

Current-voltage (I-V) characteristics of organic molecular glasses and solution processable materials embedded between two electrodes were studied to find materials possessing high charge-carrier mobilities and to design organic memory devices. The comparison studies between TOF, FET and SCLC measurements confirm the validity of using analyses of I-V characteristics to determine the mobility of organic semiconductors. Hexaazatrinaphthylene derivatives tri-substituted by electron withdrawing groups were characterized as potential electron transporting molecular glasses. The presence of two isomers has important implications for film morphology and effective mobility. The statistical isomer mixture of hexaazatrinaphthylene derivatized with pentafluoro-phenylmethyl ester is able to form amorphous films, and electron mobilities with the range of 10--2 cm2/Vs are observed in their I-V characteristics. Single-layer organic memory devices consisting of a polymer layer embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs) prepared by a solution-based surface assembly demonstrated a potential capability as nonvolatile organic memory device with high ON/OFF switching ratios of 10 4. This level of performance could be achieved by modifying the ITO electrodes with some Ag-NDs that act as trapping sites, reducing the current in the OFF state. Based upon the observed electrical characteristics, the currents of the low-resistance state can be attributed to a tunneling through low-resistance pathways of metal particles originating from the metal top electrode in the organic layer and that the high-resistance state is controlled by charge trapping by the metal particles including Ag-NDs. In an alternative approach, complex films of AgNO3: hexaazatrinaphthylene derivatives were studied as the active layers for all-solution processed and air-stable organic memory devices. Rewritable memory effects were observed in the devices comprised of a thin polymer dielectric layer deposited on the bottom electrode, the complex film, and a conducting polymer film as the top electrode. The electrical characteristics indicate that the accumulation of Ag+ ions at the interface of the complex film and the top electrode may contribute to the switching effect.

Regenerative memory in time-delayed neuromorphic photonic resonators

NASA Astrophysics Data System (ADS)

Romeira, B.; Avó, R.; Figueiredo, José M. L.; Barland, S.; Javaloyes, J.

2016-01-01

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Stochastic memory: Memory enhancement due to noise

NASA Astrophysics Data System (ADS)

Stotland, Alexander; di Ventra, Massimiliano

2012-01-01

There are certain classes of resistors, capacitors, and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here we show that the hysteresis of such memory elements can also be induced by white noise of appropriate intensity even at very low frequencies of the external driving field. We illustrate this phenomenon using a physical model of memory resistor realized by TiO2 thin films sandwiched between metallic electrodes and discuss under which conditions this effect can be observed experimentally. We also discuss its implications on existing memory systems described in the literature and the role of colored noise.

Childhood remembered: Reports of both unique and repeated events.

PubMed

Peterson, Carole; Baker-Ward, Lynne; Grovenstein, Tiffany N

2016-01-01

To explore the significance of repeated memories for individuals' personal histories, we compared the characteristics of young adults' unique and repeated memories of childhood experiences. Memory type (unique vs. repeated) was a within-participant variable. In Experiment 1, college-age participants generated as many early memories as possible in 4 minutes; in Experiment 2, another sample provided complete reports of five early memories in each condition. In both experiments, participants rated the vividness, biographical importance and personal meaning of each memory and labelled the accompanying emotion. Unique memories were more vivid than repeated memories as well as more likely to include negative emotion, regardless of the method of reporting. Most importantly, college students rated their memories for unique and repeated events as equivalently infused with personal meaning. Analysis of the content of the memories reported in Experiment 2 established that unique and repeated memories did not differ in word count or percentages of perceptual terms or words indicating positive affect, although unique memories contained a greater percentage of negative affect. Additional analyses of content provided evidence for differences in the functions served by unique and repeated memories. The results have implications for the study of autobiographical memory and for identifying over-general memories.

A Meta-Analysis of Mathematics and Working Memory: Moderating Effects of Working Memory Domain, Type of Mathematics Skill, and Sample Characteristics

ERIC Educational Resources Information Center

Peng, Peng; Namkung, Jessica; Barnes, Marcia; Sun, Congying

2016-01-01

The purpose of this meta-analysis was to determine the relation between mathematics and working memory (WM) and to identify possible moderators of this relation including domains of WM, types of mathematics skills, and sample type. A meta-analysis of 110 studies with 829 effect sizes found a significant medium correlation of mathematics and WM, r…

Fabrication of p-n heterostructure ZnO/Si moth-eye structures: Antireflection, enhanced charge separation and photocatalytic properties

NASA Astrophysics Data System (ADS)

Zeng, Yu; Chen, XiFang; Yi, Zao; Yi, Yougen; Xu, Xibin

2018-05-01

The pyramidal silicon substrate is formed by wet etching, then ZnO nanorods are grown on the surface of the pyramidal microstructure by a hydrothermal method to form a moth-eye composite heterostructure. The composite heterostructure of this material determines its excellent anti-reflection properties and ability to absorb light from all angles. In addition, due to the effective heterojunction binding area, the composite micro/nano structure has excellent photoelectric conversion performance. Its surface structure and the large specific surface area gives the material super hydrophilicity, excellent gas sensing characteristic, and photocatalytic properties. Based on the above characteristics, the micro/nano heterostructure can be used in solar cells, sensors, light-emitting devices, and photocatalytic fields.

Far-IR transparency and dynamic infrared signature control with novel conducting polymer systems

NASA Astrophysics Data System (ADS)

Chandrasekhar, Prasanna; Dooley, T. J.

1995-09-01

Materials which possess transparency, coupled with active controllability of this transparency in the infrared (IR), are today an increasingly important requirement, for varied applications. These applications include windows for IR sensors, IR-region flat panel displays used in camouflage as well as in communication and sight through night-vision goggles, coatings with dynamically controllable IR-emissivity, and thermal conservation coatings. Among stringent requirements for these applications are large dynamic ranges (color contrast), 'multi-color' or broad-band characteristics, extended cyclability, long memory retention, matrix addressability, small area fabricability, low power consumption, and environmental stability. Among materials possessing the requirements for variation of IR signature, conducting polymers (CPs) appear to be the only materials with dynamic, actively controllable signature and acceptable dynamic range. Conventional CPs such as poly(alkyl thiophene), poly(pyrrole) or poly(aniline) show very limited dynamic range, especially in the far-IR, while also showing poor transparency. We have developed a number of novel CP systems ('system' implying the CP, the selected dopant, the synthesis method, and the electrolyte) with very wide dynamic range (up to 90% in both important IR regions, 3 - 5 (mu) and 8 - 12 (mu) ), high cyclability (to 105 cycles with less than 10% optical degradation), nearly indefinite optical memory retention, matrix addressability of multi-pixel displays, very wide operating temperature and excellent environmental stability, low charge capacity, and processability into areas from less than 1 mm2 to more than 100 cm2. The criteria used to design and arrive at these CP systems, together with representative IR signature data, are presented in this paper.

Characteristics Of Ferroelectric Logic Gates Using a Spice-Based Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2005-01-01

A SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The use of FFETs in other circuits, both analog and digital needs to be better understood. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates. It models FFET inverter, NAND gate and multi-input NAND gate. The I-V characteristics of the gates are presented as well as transfer characteristics and timing. The model used is a SPICE-based model developed from empirical data from actual Ferroelectric transistors. It simulates all major characteristics of the ferroelectric transistor, including polarization, hysteresis and decay. Contrasts are made of the differences between FFET logic gates and CMOS logic gates. FFET parameters are varied to show the effect on the overall gate. A recodigurable gate is investigated which is not possible with CMOS circuits. The paper concludes that FFETs can be used in logic gates and have several advantages over standard CMOS gates.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.

PubMed

Sun, Bai; Zhang, Xuejiao; Zhou, Guangdong; Yu, Tian; Mao, Shuangsuo; Zhu, Shouhui; Zhao, Yong; Xia, Yudong

2018-06-15

In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-read-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM). Copyright © 2018 Elsevier Inc. All rights reserved.

The nucleus accumbens and learning and memory.

PubMed

Setlow, B

1997-09-01

Recent research on the nucleus accumbens (NA) indicates that this brain region is involved in learning and memory processes in a way that is separable from its other well-known roles in behavior, such as motivation, reward, and locomotor activity. These findings have suggested that 1) the NA may be involved in declarative, or hippocampal formation-dependent learning and memory, and not in several other non-declarative forms of learning and memory, and 2) the NA may be selectively involved in certain stages of learning and memory. These characteristics suggest that the NA may be part of a larger striatal system which subserves acquisition and consolidation, but is not a site of long-term storage, of different forms of learning and memory.

Nursing and philanthropy: a partnership to advance professional excellence and exceptional care.

PubMed

Janney, Michelle A

2014-01-01

Michelle A. Janney, PhD, RN, NEA-BC, 2013 AONE President, Senior Vice President, and Wood-Prince Family Chief Nurse Executive at Northwestern Memorial Hospital, discusses the impact of engaging institutional leadership in nursing philanthropic and strategic priorities and the importance of developing a culture of philanthropy that permeates the organization and encourages participation from all levels. The article highlights key outcomes of Northwestern Memorial Hospital's collective efforts to build a culture of philanthropy that prioritizes nursing as consequential to the mission of the organization. The outcomes demonstrate how such a culture provides a critical platform for creating opportunities that enable nurses to be indispensable partners in a shared commitment to the highest-quality, scientifically driven, personalized care.

[Changes of the neuronal membrane excitability as cellular mechanisms of learning and memory].

PubMed

Gaĭnutdinov, Kh L; Andrianov, V V; Gaĭnutdinova, T Kh

2011-01-01

In the presented review given literature and results of own studies of dynamics of electrical characteristics of neurons, which change are included in processes both an elaboration of learning, and retention of the long-term memory. Literary datas and our results allow to conclusion, that long-term retention of behavioural reactions during learning is accompanied not only by changing efficiency of synaptic transmission, as well as increasing of excitability of command neurons of the defensive reflex. This means, that in the process of learning are involved long-term changes of the characteristics a membrane of certain elements of neuronal network, dependent from the metabolism of the cells. see text). Thou phenomena possible mark as cellular (electrophysiological) correlates of long-term plastic modifications of the behaviour. The analyses of having results demonstrates an important role of membrane characteristics of neurons (their excitability) and parameters an synaptic transmission not only in initial stage of learning, as well as in long-term modifications of the behaviour (long-term memory).

Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Otsuka, Shintaro; Takeda, Ryouta; Furuya, Saeko; Shimizu, Tomohiro; Shingubara, Shouso; Iwata, Nobuyuki; Watanabe, Tadataka; Takano, Yoshiki; Takase, Kouichi

2012-06-01

We have investigated the current-voltage characteristics of a resistive switching memory (ReRAM), especially the reproducibility of the switching voltage between an insulating state and a metallic state. The poor reproducibility hinders the practical use of this memory. According to a filament model, the variation of the switching voltage may be understood in terms of the random choice of filaments with different conductivities and lengths at each switching. A limitation of the number of conductive paths is expected to lead to the suppression of the variation of switching voltage. In this study, two strategies for the limitation have been proposed using an anodic porous alumina (APA). The first is the reduction of the number of conductive paths by restriction of the contact area between the top electrodes and the insulator. The second is the lowering of the resistivity of the insulator, which makes it possible to grow filaments with the same characteristics by electrochemical treatments using a pulse-electroplating technique.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kimura, K.; Ohmi, K.; Tottori University Electronic Display Research Center, 101 Minami4-chome, Koyama-cho, Tottori-shi, Tottori 680-8551

With increasing density of memory devices, the issue of generating soft errors by cosmic rays is becoming more and more serious. Therefore, the irradiation resistance of resistance random access memory (ReRAM) to cosmic radiation has to be elucidated for practical use. In this paper, we investigated the data retention characteristics of ReRAM against ultraviolet irradiation with a Pt/NiO/ITO structure. Soft errors were confirmed to be caused by ultraviolet irradiation in both low- and high-resistance states. An analysis of the wavelength dependence of light irradiation on data retention characteristics suggested that electronic excitation from the valence to the conduction band andmore » to the energy level generated due to the introduction of oxygen vacancies caused the errors. Based on a statistically estimated soft error rates, the errors were suggested to be caused by the cohesion and dispersion of oxygen vacancies owing to the generation of electron-hole pairs and valence changes by the ultraviolet irradiation.« less

[Executive functions and stressful characteristics of children with attention-deficit hyperactivity disorder: influence on behavioral problems during adolescence].

PubMed

Colomer-Diago, Carla; Miranda-Casas, Ana; Herdoiza-Arroyo, Paulina; Presentación-Herrero, M Jesús

2012-02-29

The identification of possible factors that are influencing the course of attention-deficit hyperactivity disorder (ADHD) will allow the development of more effective early intervention strategies. AIMS. This research, which used a longitudinal and correlational design, set out to examine the temporal consistency of the primary symptoms and ADHD associated problems. In addition, the relationships and predictive power of working memory, inhibition and stressful characteristics of children with ADHD on the disorder symptoms and behavioral problems in adolescence was analyzed. This study included 65 families with children diagnosed with ADHD. In phase 1 children performed verbal working memory, visuo-spatial and inhibition tests, and information from parents about stressful characteristics of children was collected. In phase 1 and in the follow-up phase, which took place three years later, parents and teachers reported on the primary symptoms of ADHD and behavioral problems. Inattention symptoms as well as most behavioral problems were stable over time, while hyperactivity/impulsivity symptoms decreased. Moreover, neither working memory nor inhibition showed power to predict the central manifestations of ADHD or behavioral problems, while stressful characteristics of demandingness, low adaptability and negative mood had a moderate predictive capacity. These results confirm the role of stressful child characteristics as a risk factor in the course of ADHD.

How do episodic and semantic memory contribute to episodic foresight in young children?

PubMed

Martin-Ordas, Gema; Atance, Cristina M; Caza, Julian S

2014-01-01

Humans are able to transcend the present and mentally travel to another time, place, or perspective. Mentally projecting ourselves backwards (i.e., episodic memory) or forwards (i.e., episodic foresight) in time are crucial characteristics of the human memory system. Indeed, over the past few years, episodic memory has been argued to be involved both in our capacity to retrieve our personal past experiences and in our ability to imagine and foresee future scenarios. However, recent theory and findings suggest that semantic memory also plays a significant role in imagining future scenarios. We draw on Tulving's definition of episodic and semantic memory to provide a critical analysis of their role in episodic foresight tasks described in the developmental literature. We conclude by suggesting future directions of research that could further our understanding of how both episodic memory and semantic memory are intimately connected to episodic foresight.

How do episodic and semantic memory contribute to episodic foresight in young children?

PubMed Central

Martin-Ordas, Gema; Atance, Cristina M.; Caza, Julian S.

2014-01-01

Humans are able to transcend the present and mentally travel to another time, place, or perspective. Mentally projecting ourselves backwards (i.e., episodic memory) or forwards (i.e., episodic foresight) in time are crucial characteristics of the human memory system. Indeed, over the past few years, episodic memory has been argued to be involved both in our capacity to retrieve our personal past experiences and in our ability to imagine and foresee future scenarios. However, recent theory and findings suggest that semantic memory also plays a significant role in imagining future scenarios. We draw on Tulving’s definition of episodic and semantic memory to provide a critical analysis of their role in episodic foresight tasks described in the developmental literature. We conclude by suggesting future directions of research that could further our understanding of how both episodic memory and semantic memory are intimately connected to episodic foresight. PMID:25071690

Non-Attended Representations are Perceptual Rather than Unconscious in Nature

PubMed Central

Fahrenfort, Johannes J.; Ambroziak, Klaudia B.; Lamme, Victor A. F.

2012-01-01

Introspectively we experience a phenomenally rich world. In stark contrast, many studies show that we can only report on the few items that we happen to attend to. So what happens to the unattended objects? Are these consciously processed as our first person perspective would have us believe, or are they – in fact – entirely unconscious? Here, we attempt to resolve this question by investigating the perceptual characteristics of visual sensory memory. Sensory memory is a fleeting, high-capacity form of memory that precedes attentional selection and working memory. We found that memory capacity benefits from figural information induced by the Kanizsa illusion. Importantly, this benefit was larger for sensory memory than for working memory and depended critically on the illusion, not on the stimulus configuration. This shows that pre-attentive sensory memory contains representations that have a genuinely perceptual nature, suggesting that non-attended representations are phenomenally experienced rather than unconscious. PMID:23209639

Auditory feedback blocks memory benefits of cueing during sleep

PubMed Central

Schreiner, Thomas; Lehmann, Mick; Rasch, Björn

2015-01-01

It is now widely accepted that re-exposure to memory cues during sleep reactivates memories and can improve later recall. However, the underlying mechanisms are still unknown. As reactivation during wakefulness renders memories sensitive to updating, it remains an intriguing question whether reactivated memories during sleep also become susceptible to incorporating further information after the cue. Here we show that the memory benefits of cueing Dutch vocabulary during sleep are in fact completely blocked when memory cues are directly followed by either correct or conflicting auditory feedback, or a pure tone. In addition, immediate (but not delayed) auditory stimulation abolishes the characteristic increases in oscillatory theta and spindle activity typically associated with successful reactivation during sleep as revealed by high-density electroencephalography. We conclude that plastic processes associated with theta and spindle oscillations occurring during a sensitive period immediately after the cue are necessary for stabilizing reactivated memory traces during sleep. PMID:26507814

Individual differences in working memory: introduction to the special section.

PubMed

Miyake, A

2001-06-01

This special section includes a set of 5 articles that examine the nature of inter- and intraindividual differences in working memory, using working memory span tasks as the main research tools. These span tasks are different from traditional short-term memory spans (e.g., digit or word span) in that they require participants to maintain some target memory items (e.g., words) while simultaneously performing some other tasks (e.g., reading sentences). In this introduction, a brief discussion of these working memory span tasks and their characteristics is provided first. This is followed by an overview of 2 major theoretical issues that are addressed by the subsequent articles--(a) the factors influencing the inter- and intraindividual differences in working memory performance and (b) the domain generality versus domain specificity of working memory--and also of some important issues that must be kept in mind when readers try to evaluate the claims regarding these 2 theoretical issues.

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

NASA Astrophysics Data System (ADS)

Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-05-01

As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 106 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

ILLIAC 4 systems characteristics and programming manual

NASA Technical Reports Server (NTRS)

1973-01-01

The latest edition is presented of the Systems Characteristics and Programming Manual of the ILLIAC 4 array and parallel disc memory system. The major aspects of the array described include: the array systems characteristics, programming characteristics, definition and flow charts, and timing. A glossary of terms, and an instruction index are included.

Shifting visual perspective during memory retrieval reduces the accuracy of subsequent memories.

PubMed

Marcotti, Petra; St Jacques, Peggy L

2018-03-01

Memories for events can be retrieved from visual perspectives that were never experienced, reflecting the dynamic and reconstructive nature of memories. Characteristics of memories can be altered when shifting from an own eyes perspective, the way most events are initially experienced, to an observer perspective, in which one sees oneself in the memory. Moreover, recent evidence has linked these retrieval-related effects of visual perspective to subsequent changes in memories. Here we examine how shifting visual perspective influences the accuracy of subsequent memories for complex events encoded in the lab. Participants performed a series of mini-events that were experienced from their own eyes, and were later asked to retrieve memories for these events while maintaining the own eyes perspective or shifting to an alternative observer perspective. We then examined how shifting perspective during retrieval modified memories by influencing the accuracy of recall on a final memory test. Across two experiments, we found that shifting visual perspective reduced the accuracy of subsequent memories and that reductions in vividness when shifting visual perspective during retrieval predicted these changes in the accuracy of memories. Our findings suggest that shifting from an own eyes to an observer perspective influences the accuracy of long-term memories.

Preparation and Characterization of Nitinol Bone Staples for Cranio-Maxillofacial Surgery

NASA Astrophysics Data System (ADS)

Lekston, Z.; Stróż, D.; Jędrusik-Pawłowska, M.

2012-12-01

The aim of this work was to form NiTi and TiNiCo body temperature activated and superelastic staples for clinical joining of mandible and face bone fractures. The alloys were obtained by VIM technique. Hot and cold processing was applied to obtain wires of required diameters. The martensitic transformation was studied by DSC, XRD, and TEM. The shape memory effects were measured by a bend and free recovery ASTM F2082-06 test. The superelasticity was recorded in the tension stress-strain and by the three-point bending cycles in an instrument equipped with a Hottinger force transducer and LVDT. Excellent superelastic behavior of TiNiCo wires was obtained after cold working and annealing at 400-500 °C. The body temperature activated shape memory staples were applied for fixation of mandibular condyle fractures. In experiments on the skull models, fixation of the facial fractures by using shape memory and superelastic staples were compared. The superelastic staples were used in osteosynthesis of zygomatico-maxillo-orbital fractures.

Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen

2015-01-01

The effects of Ni/ZrO2/TaN resistive switching memory devices without and with a 400 °C annealing process on switching properties are investigated. The devices exhibit unipolar resistive switching behaviors with low set and reset voltages because of a large amount of Ni diffusion with no reaction with ZrO2 after the annealing process, which is confirmed by ToF-SIMS and XPS analyses. A physical model based on a Ni filament is constructed to explain such phenomena. The device that undergoes the 400 °C annealing process exhibits an excellent endurance of more than 1.5  ×  104 cycles. The improvement can be attributed to the enhancement of oxygen ion migration along grain boundaries, which result in less oxygen ion consumption during the reset process. The device also performs good retention up to 105 s at 150 °C. Therefore, it has great potential for high-density nonvolatile memory applications.

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

PubMed Central

Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

2016-01-01

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced. PMID:27834352

Furoxans (Oxadiazole-4 N-oxides) with Attenuated Reactivity are Neuroprotective, Cross the Blood Brain Barrier, and Improve Passive Avoidance Memory.

PubMed

Horton, Austin; Nash, Kevin; Tackie-Yarboi, Ethel; Kostrevski, Alexander; Novak, Adam; Raghavan, Aparna; Tulsulkar, Jatin; Alhadidi, Qasim; Wamer, Nathan; Langenderfer, Bryn; Royster, Kalee; Ducharme, Maxwell; Hagood, Katelyn; Post, Megan; Shah, Zahoor A; Schiefer, Isaac T

2018-05-07

Nitric oxide (NO) mimetics and other agents capable of enhancing NO/cGMP signaling have demonstrated efficacy as potential therapies for Alzheimer's disease. A group of thiol-dependent NO mimetics known as furoxans may be designed to exhibit attenuated reactivity to provide slow onset NO effects. The present study describes the design, synthesis, and evaluation of a furoxan library resulting in the identification of a prototype furoxan, 5a, which was profiled for use in the central nervous system. Furoxan 5a demonstrated negligible reactivity toward generic cellular thiols under physiological conditions. Nonetheless, cGMP-dependent neuroprotection was observed, and 5a (20 mg/kg) reversed cholinergic memory deficits in a mouse model of passive avoidance fear memory. Importantly, 5a can be prepared as a pharmaceutically acceptable salt and is observed in the brain 12 h after oral administration, suggesting potential for daily dosing and excellent metabolic stability. Continued investigation into furoxans as attenuated NO mimetics for the CNS is warranted.

Porous inorganic-organic shape memory polymers.

PubMed

Zhang, Dawei; Burkes, William L; Schoener, Cody A; Grunlan, Melissa A

2012-06-21

Thermoresponsive shape memory polymers (SMPs) are a type of stimuli-sensitive materials that switch from a temporary shape back to their permanent shape upon exposure to heat. While the majority of SMPs have been fabricated in the solid form, porous SMP foams exhibit distinct properties and are better suited for certain applications, including some in the biomedical field. Like solid SMPs, SMP foams have been restricted to a limited group of organic polymer systems. In this study, we prepared inorganic-organic SMP foams based on the photochemical cure of a macromer comprised of inorganic polydimethylsiloxane (PDMS) segments and organic poly(ε-caprolactone) (PCL) segments, diacrylated PCL(40)-block-PDMS(37)-block-PCL(40). To achieve tunable pore size with high interconnectivity, the SMP foams were prepared via a refined solvent-casting/particulate-leaching (SCPL) method. By varying design parameters such as degree of salt fusion, macromer concentration in the solvent and salt particle size, the SMP foams with excellent shape memory behavior and tunable pore size, pore morphology, and modulus were obtained.

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

PubMed

Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Banerjee, Writam; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Liu, Ming

2016-08-25

Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>10(3)) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic.

PubMed

Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

2016-11-11

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.

Ultra low density biodegradable shape memory polymer foams with tunable physical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singhal, Pooja; Wilson, Thomas S.; Cosgriff-Hernandez, Elizabeth

Compositions and/or structures of degradable shape memory polymers (SMPs) ranging in form from neat/unfoamed to ultra low density materials of down to 0.005 g/cc density. These materials show controllable degradation rate, actuation temperature and breadth of transitions along with high modulus and excellent shape memory behavior. A method of m ly low density foams (up to 0.005 g/cc) via use of combined chemical and physical aking extreme blowing agents, where the physical blowing agents may be a single compound or mixtures of two or more compounds, and other related methods, including of using multiple co-blowing agents of successively higher boilingmore » points in order to achieve a large range of densities for a fixed net chemical composition. Methods of optimization of the physical properties of the foams such as porosity, cell size and distribution, cell openness etc. of these materials, to further expand their uses and improve their performance.« less

ESTROGEN REPLACEMENT THERAPY INDUCES FUNCTIONAL ASYMMETRY ON AN ODOR MEMORY/DISCRIMINATION TEST

PubMed Central

Doty, Richard L.; Kisat, Mehreen; Tourbier, Isabelle

2008-01-01

The secondary afferents of the olfactory system largely project to the ipsilateral cortex without synapsing in the thalamus, making unilateral olfactory testing a useful probe of ipsilateral hemispheric activity. In light of evidence that lateralized performance on some perceptual tasks may be influenced by estrogen, we assessed left:right nostril differences in two measures of olfactory function in 14 post-menopausal women receiving estrogen replacement therapy (ERT) and 48 post-menopausal women receiving no such therapy. Relative to women not taking ERT, those receiving ERT exhibited better performance in the left nostril and poorer performance in the right nostril on an odor memory/discrimination test. Similar laterality effects were not observed for an odor detection threshold test employing phenyl ethyl alcohol. These results suggest that estrogen influences the lateralization of an odor memory/discrimination task and that hormone replacement therapy in the menopause may be an excellent paradigm for understanding lateralizing effects of hormones on some sensory processes. PMID:18466883

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

NASA Astrophysics Data System (ADS)

Kim, Wonjoo; Chattopadhyay, Anupam; Siemon, Anne; Linn, Eike; Waser, Rainer; Rana, Vikas

2016-11-01

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.

Combining Distributed and Shared Memory Models: Approach and Evolution of the Global Arrays Toolkit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nieplocha, Jarek; Harrison, Robert J.; Kumar, Mukul

2002-07-29

Both shared memory and distributed memory models have advantages and shortcomings. Shared memory model is much easier to use but it ignores data locality/placement. Given the hierarchical nature of the memory subsystems in the modern computers this characteristic might have a negative impact on performance and scalability. Various techniques, such as code restructuring to increase data reuse and introducing blocking in data accesses, can address the problem and yield performance competitive with message passing[Singh], however at the cost of compromising the ease of use feature. Distributed memory models such as message passing or one-sided communication offer performance and scalability butmore » they compromise the ease-of-use. In this context, the message-passing model is sometimes referred to as?assembly programming for the scientific computing?. The Global Arrays toolkit[GA1, GA2] attempts to offer the best features of both models. It implements a shared-memory programming model in which data locality is managed explicitly by the programmer. This management is achieved by explicit calls to functions that transfer data between a global address space (a distributed array) and local storage. In this respect, the GA model has similarities to the distributed shared-memory models that provide an explicit acquire/release protocol. However, the GA model acknowledges that remote data is slower to access than local data and allows data locality to be explicitly specified and hence managed. The GA model exposes to the programmer the hierarchical memory of modern high-performance computer systems, and by recognizing the communication overhead for remote data transfer, it promotes data reuse and locality of reference. This paper describes the characteristics of the Global Arrays programming model, capabilities of the toolkit, and discusses its evolution.« less

Instructional Design and Directed Cognitive Processing.

ERIC Educational Resources Information Center

Bovy, Ruth Colvin

This paper argues that the information processing model provides a promising basis on which to build a comprehensive theory of instruction. Characteristics of the major information processing constructs are outlined including attention, encoding and rehearsal, working memory, long term memory, retrieval, and metacognitive processes, and a unifying…

Assessment of the Bill Emerson Memorial Cable-stayed Bridge based on seismic instrumentation data

DOT National Transportation Integrated Search

2007-06-01

In this study, both ambient and earthquake data measured from the Bill Emerson Memorial Cable-stayed Bridge are reported and analyzed. Based on the seismic instrumentation data, the vibration characteristics of the bridge are investigated and used to...

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

NASA Astrophysics Data System (ADS)

Miyaji, Kousuke; Hung, Chinglin; Takeuchi, Ken

2012-04-01

The scaling trends and limitation in sub-20 nm a bulk and silicon-on-insulator (SOI) NAND flash memory is studied by the three-dimensional (3D) device simulation focusing on short channel effects (SCE), channel boost leakage and channel voltage boosting characteristics during the program-inhibit operation. Although increasing punch-through stopper doping concentration is effective for suppressing SCE in bulk NAND cells, the generation of junction leakage becomes serious. On the other hand, SCE can be suppressed by thinning the buried oxide (BOX) in SOI NAND cells. However, the boosted channel voltage decreases by the higher BOX capacitance. It is concluded that the scaling limitation is dominated by the junction leakage and channel boosting capability for bulk and SOI NAND flash cells, respectively, and the scaling limit is decreased to 9 nm using SOI NAND flash memory cells from 13 nm in bulk NAND flash memory cells.

Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memory.

PubMed

Yang, Shiqian; Wang, Qin; Zhang, Manhong; Long, Shibing; Liu, Jing; Liu, Ming

2010-06-18

Titanium-tungsten nanocrystals (NCs) were fabricated by a self-assembly rapid thermal annealing (RTA) process. Well isolated Ti(0.46)W(0.54) NCs were embedded in the gate dielectric stack of SiO(2)/Al(2)O(3). A metal-oxide-semiconductor (MOS) capacitor was fabricated to investigate its application in a non-volatile memory (NVM) device. It demonstrated a large memory window of 6.2 V in terms of flat-band voltage (V(FB)) shift under a dual-directional sweeping gate voltage of - 10 to 10 V. A 1.1 V V(FB) shift under a low dual-directional sweeping gate voltage of - 4 to 4 V was also observed. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 10(4) s of elapsed time at room temperature. The endurance characteristic was demonstrated by a program/erase cycling test.

Memory of childhood sexual abuse among clinicians: characteristics, outcomes, and current therapy attitudes.

PubMed

Little, L; Hamby, S L

2001-10-01

This paper reports preliminary data on a sample of therapists with memory of childhood sexual abuse. Therapists who reported experiencing childhood sexual abuse (CSA, n = 131) were compared with therapists who suspected sexual abuse but had no memories (n = 24) on variables related to abuse characteristics, outcomes, and perceived difficulties working with clients with a CSA history. Therapists who suspected abuse, in contrast to those who made definite reports, were more likely to report that the perpetrator was a family member, that their CSA did not involve physical contact, that there was alcoholism in their families of origin, and that the CSA had negative effects on their relationships with their own children, ability to trust others, sexual satisfaction, and work life. Therapists who suspected abuse also reported more difficulty treating CSA clients because of interpersonal pulls during sessions, arousal without memories of abuse, and some countertransferential behaviors. These findings indicate that issues related to personal trauma should be addressed during training and practice.

Fault Tolerant Frequent Pattern Mining

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shohdy, Sameh; Vishnu, Abhinav; Agrawal, Gagan

FP-Growth algorithm is a Frequent Pattern Mining (FPM) algorithm that has been extensively used to study correlations and patterns in large scale datasets. While several researchers have designed distributed memory FP-Growth algorithms, it is pivotal to consider fault tolerant FP-Growth, which can address the increasing fault rates in large scale systems. In this work, we propose a novel parallel, algorithm-level fault-tolerant FP-Growth algorithm. We leverage algorithmic properties and MPI advanced features to guarantee an O(1) space complexity, achieved by using the dataset memory space itself for checkpointing. We also propose a recovery algorithm that can use in-memory and disk-based checkpointing,more » though in many cases the recovery can be completed without any disk access, and incurring no memory overhead for checkpointing. We evaluate our FT algorithm on a large scale InfiniBand cluster with several large datasets using up to 2K cores. Our evaluation demonstrates excellent efficiency for checkpointing and recovery in comparison to the disk-based approach. We have also observed 20x average speed-up in comparison to Spark, establishing that a well designed algorithm can easily outperform a solution based on a general fault-tolerant programming model.« less

New design strategy for reversible plasticity shape memory polymers with deformable glassy aggregates.

PubMed

Lin, Tengfei; Tang, Zhenghai; Guo, Baochun

2014-12-10

Reversible plasticity shape memory (RPSM) is a new concept in the study of shape memory performance behavior and describes a phenomenon in which shape memory polymers (SMPs) can undergo a large plastic deformation at room temperature and subsequently recover their original shape upon heating. To date, RPSM behavior has been demonstrated in only a few polymers. In the present study, we implement a new design strategy, in which deformable glassy hindered phenol (AO-80) aggregates are incorporated into an amorphous network of epoxidized natural rubber (ENR) cured with zinc diacrylate (ZDA), in order to achieve RPSM properties. We propose that AO-80 continuously tunes the glass transition temperature (Tg) and improves the chain mobility of the SMP, providing traction and anchoring the ENR chains by intermolecular hydrogen bonding interactions. The RPSM behavior of the amorphous SMPs is characterized, and the results demonstrate good fixity at large deformations (up to 300%) and excellent recovery upon heating. Large energy storage capacities at Td in these RPSM materials are demonstrated compared with those achieved at elevated temperature in traditional SMPs. Interestingly, the further revealed self-healing properties of these materials are closely related to their RPSM behavior.

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Yao-Feng, E-mail: yfchang@utexas.edu; Zhou, Fei; Chen, Ying-Chen

2016-01-18

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS) memory using TiW/SiO{sub x}/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO{sub x}-based RS memory. By using amore » conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO{sub x}-based RS memory.« less

Manipulations of attention dissociate fragile visual short-term memory from visual working memory.

PubMed

Vandenbroucke, Annelinde R E; Sligte, Ilja G; Lamme, Victor A F

2011-05-01

People often rely on information that is no longer in view, but maintained in visual short-term memory (VSTM). Traditionally, VSTM is thought to operate on either a short time-scale with high capacity - iconic memory - or a long time scale with small capacity - visual working memory. Recent research suggests that in addition, an intermediate stage of memory in between iconic memory and visual working memory exists. This intermediate stage has a large capacity and a lifetime of several seconds, but is easily overwritten by new stimulation. We therefore termed it fragile VSTM. In previous studies, fragile VSTM has been dissociated from iconic memory by the characteristics of the memory trace. In the present study, we dissociated fragile VSTM from visual working memory by showing a differentiation in their dependency on attention. A decrease in attention during presentation of the stimulus array greatly reduced the capacity of visual working memory, while this had only a small effect on the capacity of fragile VSTM. We conclude that fragile VSTM is a separate memory store from visual working memory. Thus, a tripartite division of VSTM appears to be in place, comprising iconic memory, fragile VSTM and visual working memory. Copyright © 2011 Elsevier Ltd. All rights reserved.

A review of emerging non-volatile memory (NVM) technologies and applications

NASA Astrophysics Data System (ADS)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

NASA Astrophysics Data System (ADS)

Abbas, Haider; Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Kang, Tae Su; Yoon, Tae-Sik; Kang, Chi Jung

2018-06-01

Improved resistive switching characteristics are demonstrated in a hybrid device with Pt/Ti/MnO (thin film)/MnO (nanoparticle)/Pt structure. The hybrid devices of MnO thin film and nanoparticle assembly were fabricated. MnO nanoparticles with an average diameter of ∼30 nm were chemically synthesized and assembled as a monolayer on a Pt bottom electrode. A MnO thin film of ∼40 nm thickness was deposited on the nanoparticle assembly to form the hybrid structure. Resistive switching could be induced by the formation and rupture of conducting filaments in the hybrid oxide layers. The hybrid device exhibited very stable unipolar switching with good endurance and retention characteristics. It showed a larger and stable memory window with a uniform distribution of SET and RESET voltages. Moreover, the conduction mechanisms of ohmic conduction, space-charge-limited conduction, Schottky emission, and Poole–Frenkel emission have been investigated as possible conduction mechanisms for the switching of the devices. Using MnO nanoparticles in the thin film and nanoparticle heterostructures enabled the appropriate control of resistive random access memory (RRAM) devices and markedly improved their memory characteristics.

Déjà vu: possible parahippocampal mechanisms.

PubMed

Spatt, Josef

2002-01-01

Déjà vu experiences are common in normal subjects. In addition, they are established symptoms of temporal lobe seizures. The author argues that the phenomenon is the result of faulty and isolated activity of a recognition memory system that consists of the parahippocampal gyrus and its neocortical connections. This memory system is responsible for judgments of familiarity. The result is that a momentary perceived scene is given the characteristics of familiarity that normally accompany a conscious recollection. The normal functioning of other brain structures involved in memory retrieval--the prefrontal cortex and the hippocampus proper--leads to the perplexing phenomenological quality of déjà vu. The hypothesis accounts for many characteristics of déjà vu in healthy subjects and is well fitting with experimental findings in patients with epilepsy.

The Staggered Spondaic Word Test. A ten-minute look at the central nervous system through the ears.

PubMed

Katz, J; Smith, P S

1991-01-01

We have described three major groupings that encompass most auditory processing difficulties. While the problems may be superimposed upon one another in any individual client, each diagnostic sign is closely associated with particular communication and learning disorders. In addition, these behaviors may be related back to the functional anatomy of the regions that are implicated by the SSW test. The auditory-decoding group is deficient in rapid analysis of speech. The vagueness of speech sound knowledge is thought to lead to auditory misunderstanding and confusion. In early life, this may be reflected in the child's articulation. Poor phonic skills that result from this deficit are thought to contribute to their limited reading and spelling abilities. The auditory tolerance-fading memory group is often thought to have severe auditory-processing problems because those in it are highly distracted by background sounds and have poor auditory memories. However, school performance is not far from grade level, and the resulting reading disabilities stem more from limited comprehension than from an inability to sound out the words. Distractibility and poor auditory memory could contribute to the apparent weakness in reading comprehension. Many of the characteristics of the auditory tolerance-fading memory group are similar to those of attention deficit disorder cases. Both groups are associated anatomically with the AC region. The auditory integration cases can be divided into two subgroups. In the first, the subjects exhibit the most severe reading and spelling problems of the three major categories. These individuals closely resemble the classical dyslexics. We presume that this disorder represents a major disruption in auditory-visual integration. The second subgroup has much less severe learning difficulties, which closely follow the pattern of dysfunction of the auditory tolerance-fading memory group. The excellent physiological procedures to which we have been exposed during this Windows on the Brain conference provide a glimpse of the exciting possibilities for studying brain function. However, in working with individuals who have cognitive impairments, the new technology should be validated by standard behavioral tests. In turn, the new techniques will provide those who use behavioral measures with new parameters and concepts to broaden our understanding. For the past quarter of a century, the SSW test has been compared with other behavioral, physiological, and anatomical procedures. Based on the information that has been assembled, we have been able to classify auditory processing disorders into three major categories.(ABSTRACT TRUNCATED AT 400 WORDS)

Memory characteristics of ring-shaped ceramic superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeoka, A.; Hasunuma, M.; Sakaiya, S.

1989-03-01

For the practical application of ceramic superconductors, the authors investigated the residual magnetic field characteristics of ring-shaped ceramic superconductors in a Y-Ba-Cu-O system with high Tc. The residual magnetic field of a ring with asymmetric current paths, supplied by external currents, appeared when one of the branch currents was above the critical current. The residual magnetic field saturated when both brach currents exceeded the critical current of the ring and showed hysteresis-like characteristics. The saturated magnetic field is subject to the critical current of the ring. A superconducting ring with asymmetric current paths suggests a simple and quite new persistent-currentmore » type memory device.« less

Longitudinal assessment of short-term memory deterioration in a logopenic variant primary progressive aphasia with post-mortem confirmed Alzheimer's Disease pathology.

PubMed

Tree, Jeremy; Kay, Janice

2015-09-01

In the field of dementia research, there are reports of neurodegenerative cases with a focal loss of language, termed primary progressive aphasia (PPA). Currently, this condition has been further sub-classified, with the most recent sub-type dubbed logopenic variant (PPA-LV). As yet, there remains somewhat limited evaluation of the characteristics of this condition, with no studies providing longitudinal assessment accompanied by post-mortem examination. Moreover, a key characteristic of the PPA-LV case is a deterioration of phonological short-term memory, but again little work has scrutinized the nature of this impairment over time. The current study seeks to redress these oversights and presents detailed longitudinal examination of language and memory function in a case of PPA-LV, with special focus on tests linked to components of phonological short-term memory function. Our findings are then considered with reference to a contemporary model of the neuropsychology of phonological short-term memory. Additionally, post-mortem examinations indicated Alzheimer's disease type pathology, providing further evidence that the PPA-LV presentation may reflect an atypical presentation of this condition. © 2014 The British Psychological Society.

Cobalt germanide nanostructure formation and memory characteristic enhancement in silicon oxide films

NASA Astrophysics Data System (ADS)

Joo, Beom Soo; Kim, Hyunseung; Jang, Seunghun; Han, Dongwoo; Han, Moonsup

2018-08-01

We investigated nano-floating gate memory having a charge trap layer (CTL) composed of cobalt germanide nanostructure (ns-CoGe). A tunneling oxide layer; a CTL containing Co, Ge, and Si; and a blocking oxide layer were sequentially deposited on a p-type silicon substrate by RF magnetron sputtering and low-pressure chemical vapor deposition. We optimized the CTL formation conditions by rapid thermal annealing at a somewhat low temperature (about 830 °C) by considering the differences in Gibbs free energy and chemical enthalpy among the components. To characterize the charge storage properties, capacitance-voltage (C-V) measurements were performed. Further, we used X-ray photoelectron spectroscopy for chemical analysis of the CTL. In this work, we not only report that the C-V measurement shows a remarkable opening of the memory window for the ns-CoGe compared with those of nanostructures composed of Co or Ge alone, but also clarify that the improvement in the memory characteristics originates in the nanostructure formation, which consists mainly of Co-Ge bonds. We expect ns-CoGe to be a strong candidate for fabrication of next-generation memory devices.

Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok

2014-03-07

The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells aremore » formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.« less

American Association of Physics Teachers - AAPT.org

Science.gov Websites

Memorial Lecture, and the 2018 J. D. Jackson Award Nov 01 2017 Barbara L. Whitten will be the recipient of ) announced today that the 2017 Paul Zitzewitz Excellence in K-12 Physics Teaching Award winner is J. Mark State University - Marion in honoring the life of professor, Dr. Gordon J. Aubrecht, II. Read more Â

Validation of the Argentine version of the Memory Binding Test (MBT) for Early Detection of Mild Cognitive Impairment

PubMed Central

Roman, Fabian; Iturry, Mónica; Rojas, Galeno; Barceló, Ernesto; Buschke, Herman; Allegri, Ricardo F.

2016-01-01

ABSTRACT Background: "Forgetfulness" is frequent in normal aging and characteristic of the early stages of dementia syndromes. The episodic memory test is central for detecting amnestic mild cognitive impairment (MCI). The Memory Binding Test (MBT) is a simple, easy and brief memory test to detect the early stage of episodic memory impairment. Objective: To validate the Argentine version of the MBT in a Latin American population and to estimate the diagnostic accuracy as a tool for early detection of MCI. Methods: 88 subjects (46 healthy controls and 42 patients with amnestic MCI) matched for age and educational level were evaluated by an extensive neuropsychological battery and the memory binding test. Results: A significantly better performance was detected in the control group; all MBT scales were predictive of MCI diagnosis (p<.01). The MBT showed high sensitivity (69%) and high specificity (88%), with a PPV of 93% and a NPV of 55% for associative paired recall. A statistically significant difference (c2=14,164, p<.001) was obtained when comparing the area under the curve (AUC) of the MBT (0.88) and the MMSE (0.70). Conclusion: The Argentine version of the MBT correlated significantly with the MMSE and the memory battery and is a useful tool in the detection of MCI. The operating characteristics of the MBT are well suited, surpassing other tests commonly used for detecting MCI. PMID:29213458

Colored noise and memory effects on formal spiking neuron models

NASA Astrophysics Data System (ADS)

da Silva, L. A.; Vilela, R. D.

2015-06-01

Simplified neuronal models capture the essence of the electrical activity of a generic neuron, besides being more interesting from the computational point of view when compared to higher-dimensional models such as the Hodgkin-Huxley one. In this work, we propose a generalized resonate-and-fire model described by a generalized Langevin equation that takes into account memory effects and colored noise. We perform a comprehensive numerical analysis to study the dynamics and the point process statistics of the proposed model, highlighting interesting new features such as (i) nonmonotonic behavior (emergence of peak structures, enhanced by the choice of colored noise characteristic time scale) of the coefficient of variation (CV) as a function of memory characteristic time scale, (ii) colored noise-induced shift in the CV, and (iii) emergence and suppression of multimodality in the interspike interval (ISI) distribution due to memory-induced subthreshold oscillations. Moreover, in the noise-induced spike regime, we study how memory and colored noise affect the coherence resonance (CR) phenomenon. We found that for sufficiently long memory, not only is CR suppressed but also the minimum of the CV-versus-noise intensity curve that characterizes the presence of CR may be replaced by a maximum. The aforementioned features allow to interpret the interplay between memory and colored noise as an effective control mechanism to neuronal variability. Since both variability and nontrivial temporal patterns in the ISI distribution are ubiquitous in biological cells, we hope the present model can be useful in modeling real aspects of neurons.

Complex-valued Multidirectional Associative Memory

NASA Astrophysics Data System (ADS)

Kobayashi, Masaki; Yamazaki, Haruaki

Hopfield model is a representative associative memory. It was improved to Bidirectional Associative Memory(BAM) by Kosko and Multidirectional Associative Memory(MAM) by Hagiwara. They have two layers or multilayers. Since they have symmetric connections between layers, they ensure to converge. MAM can deal with multiples of many patterns, such as (x1, x2,…), where xm is the pattern on layer-m. Noest, Hirose and Nemoto proposed complex-valued Hopfield model. Lee proposed complex-valued Bidirectional Associative Memory. Zemel proved the rotation invariance of complex-valued Hopfield model. It means that the rotated pattern also stored. In this paper, the complex-valued Multidirectional Associative Memory is proposed. The rotation invariance is also proved. Moreover it is shown by computer simulation that the differences of angles of given patterns are automatically reduced. At first we define complex-valued Multidirectional Associative Memory. Then we define the energy function of network. By using energy function, we prove that the network ensures to converge. Next, we define the learning law and show the characteristic of recall process. The characteristic means that the differences of angles of given patterns are automatically reduced. Especially we prove the following theorem. In case that only a multiple of patterns is stored, if patterns with different angles are given to each layer, the differences are automatically reduced. Finally, we invest that the differences of angles influence the noise robustness. It reduce the noise robustness, because input to each layer become small. We show that by computer simulations.

Job strain and trajectories of change in episodic memory before and after retirement: results from the Health and Retirement Study.

PubMed

Andel, Ross; Infurna, Frank J; Hahn Rickenbach, Elizabeth A; Crowe, Michael; Marchiondo, Lisa; Fisher, Gwenith G

2015-05-01

We examined indicators of job strain in relation to level and change in episodic memory in the years leading up to as well as following retirement. Our analyses centre on 3779 individuals from the nationally representative Health and Retirement Study (baseline age 57.3 years) who reported gainful employment in an occupation for 10+ years prior to retirement, and who were assessed for episodic memory performance over up to 20 years (median 8 waves over 16 years). We used ratings from the Occupational Information Network (O*Net) to score occupations for job control and job demands, and to measure job strain (job demands/job control). Controlling for sociodemographic characteristics, depressive symptoms, and cardiovascular disease, less job control and greater job strain were not significantly associated with change in episodic memory in the period leading up to retirement, but were associated with significantly poorer episodic memory at retirement and an accelerated rate of decline in episodic memory following retirement. The results did not vary for men and women or by self-employment status. Job strain expressed mainly as low job control is linked to poorer episodic memory at retirement and more decline after retirement. Job characteristics appear to have implications for cognitive ageing independent of relevant confounds. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Carry On-with Excellence.

ERIC Educational Resources Information Center

Thompson, Helen

2002-01-01

Discussion of the expanded role of teacher for library media specialists focuses on characteristics of teaching excellence based on a story about the life of Nathaniel Bowditch. Highlights include lifelong learning; caring about learners; believing everyone can learn; reflecting on teaching methods; understanding human nature; and contributing to…

Incidental Context Information Increases Recollection

ERIC Educational Resources Information Center

Ameen-Ali, Kamar E.; Norman, Liam J.; Eacott, Madeline J.; Easton, Alexander

2017-01-01

The current study describes a receiver-operating characteristic (ROC) task for human participants based on the spontaneous recognition memory paradigms typically used with rodents. Recollection was significantly higher when an object was in the same location and background as at encoding, a combination used to assess episodic-like memory in…

Foldable and Disposable Memory on Paper

PubMed Central

Lee, Byung-Hyun; Lee, Dong-Il; Bae, Hagyoul; Seong, Hyejeong; Jeon, Seung-Bae; Seol, Myung-Lok; Han, Jin-Woo; Meyyappan, M.; Im, Sung-Gap; Choi, Yang-Kyu

2016-01-01

Foldable organic memory on cellulose nanofibril paper with bendable and rollable characteristics is demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of the resistive switching layer and inkjet printing of the electrode, where iCVD based on all-dry and room temperature process is very suitable for paper electronics. This memory exhibits a low operation voltage of 1.5 V enabling battery operation compared to previous reports and wide memory window. The memory performance is maintained after folding tests, showing high endurance. Furthermore, the quick and complete disposable nature demonstrated here is attractive for security applications. This work provides an effective platform for green, foldable and disposable electronics based on low cost and versatile materials. PMID:27922094

Synaptic Correlates of Working Memory Capacity.

PubMed

Mi, Yuanyuan; Katkov, Mikhail; Tsodyks, Misha

2017-01-18

Psychological studies indicate that human ability to keep information in readily accessible working memory is limited to four items for most people. This extremely low capacity severely limits execution of many cognitive tasks, but its neuronal underpinnings remain unclear. Here we show that in the framework of synaptic theory of working memory, capacity can be analytically estimated to scale with characteristic time of short-term synaptic depression relative to synaptic current time constant. The number of items in working memory can be regulated by external excitation, enabling the system to be tuned to the desired load and to clear the working memory of currently held items to make room for new ones. Copyright © 2017 Elsevier Inc. All rights reserved.

A Correlational Analysis of the Effects of Learner and Linear Programming Characteristics on Learning Programmed Instruction. Final Report.

ERIC Educational Resources Information Center

Seibert, Warren F.; Reid, Christopher J.

Learning and retention may be influenced by subtle instructional stimulus characteristics and certain visual memory aptitudes. Ten stimulus characteristics were chosen for study; 50 sequences of programed instructional material were specially written to conform to sampled values of each stimulus characteristic. Seventy-three freshman subjects…

Memory reactivation and consolidation during sleep

PubMed Central

Paller, Ken A.; Voss, Joel L.

2004-01-01

Do our memories remain static during sleep, or do they change? We argue here that memory change is not only a natural result of sleep cognition, but further, that such change constitutes a fundamental characteristic of declarative memories. In general, declarative memories change due to retrieval events at various times after initial learning and due to the formation and elaboration of associations with other memories, including memories formed after the initial learning episode. We propose that declarative memories change both during waking and during sleep, and that such change contributes to enhancing binding of the distinct representational components of some memories, and thus to a gradual process of cross-cortical consolidation. As a result of this special form of consolidation, declarative memories can become more cohesive and also more thoroughly integrated with other stored information. Further benefits of this memory reprocessing can include developing complex networks of interrelated memories, aligning memories with long-term strategies and goals, and generating insights based on novel combinations of memory fragments. A variety of research findings are consistent with the hypothesis that cross-cortical consolidation can progress during sleep, although further support is needed, and we suggest some potentially fruitful research directions. Determining how processing during sleep can facilitate memory storage will be an exciting focus of research in the coming years. PMID:15576883

Demonstration of an ebbinghaus illusion at a memory level: manipulation of the memory size and not the perceptual size.

PubMed

Rey, Amandine Eve; Riou, Benoit; Versace, Rémy

2014-01-01

Based on recent behavioral and neuroimaging data suggesting that memory and perception are partially based on the same sensorimotor system, the theoretical aim of the present study was to show that it is difficult to dissociate memory mechanisms from perceptual mechanisms other than on the basis of the presence (perceptual processing) or absence (memory processing) of the characteristics of the objects involved in the processing. In line with this assumption, two experiments using an adaptation of the Ebbinghaus illusion paradigm revealed similar effects irrespective of whether the size difference between the inner circles and the surrounding circles was manipulated perceptually (the size difference was perceptually present, Experiment 1) or merely reactivated in memory (the difference was perceptually absent, Experiment 2).

Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

NASA Astrophysics Data System (ADS)

Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

2018-02-01

In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

Wavelet-based associative memory

NASA Astrophysics Data System (ADS)

Jones, Katharine J.

2004-04-01

Faces provide important characteristics of a person"s identification. In security checks, face recognition still remains the method in continuous use despite other approaches (i.e. fingerprints, voice recognition, pupil contraction, DNA scanners). With an associative memory, the output data is recalled directly using the input data. This can be achieved with a Nonlinear Holographic Associative Memory (NHAM). This approach can also distinguish between strongly correlated images and images that are partially or totally enclosed by others. Adaptive wavelet lifting has been used for Content-Based Image Retrieval. In this paper, adaptive wavelet lifting will be applied to face recognition to achieve an associative memory.

Shape memory alloys: Properties and biomedical applications

NASA Astrophysics Data System (ADS)

Mantovani, Diego

2000-10-01

Shape memory alloys provide new insights for the design of biomaterials in bioengineering for the design of artificial organs and advanced surgical instruments, since they have specific characteristics and unusual properties. This article will examine (a) the four properties of shape memory alloys, (b) medical applications with high potential for improving the present and future quality of life, and (c) concerns regarding the biocom-patibility properties of nickel-titanium alloys. In particular, the long-term challenges of using shape memory alloys will be discussed, regarding corrosion and potential leakage of elements and ions that could be toxic to cells, tissues and organs.

Paradox of enrichment: A fractional differential approach with memory

NASA Astrophysics Data System (ADS)

Rana, Sourav; Bhattacharya, Sabyasachi; Pal, Joydeep; N'Guérékata, Gaston M.; Chattopadhyay, Joydev

2013-09-01

The paradox of enrichment (PoE) proposed by Rosenzweig [M. Rosenzweig, The paradox of enrichment, Science 171 (1971) 385-387] is still a fundamental problem in ecology. Most of the solutions have been proposed at an individual species level of organization and solutions at community level are lacking. Knowledge of how learning and memory modify behavioral responses to species is a key factor in making a crucial link between species and community levels. PoE resolution via these two organizational levels can be interpreted as a microscopic- and macroscopic-level solution. Fractional derivatives provide an excellent tool for describing this memory and the hereditary properties of various materials and processes. The derivatives can be physically interpreted via two time scales that are considered simultaneously: the ideal, equably flowing homogeneous local time, and the cosmic (inhomogeneous) non-local time. Several mechanisms and theories have been proposed to resolve the PoE problem, but a universally accepted theory is still lacking because most studies have focused on local effects and ignored non-local effects, which capture memory. Here we formulate the fractional counterpart of the Rosenzweig model and analyze the stability behavior of a system. We conclude that there is a threshold for the memory effect parameter beyond which the Rosenzweig model is stable and may be used as a potential agent to resolve PoE from a new perspective via fractional differential equations.

Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels

NASA Astrophysics Data System (ADS)

Wang, Xudong; Liu, Chunsen; Chen, Yan; Wu, Guangjian; Yan, Xiao; Huang, Hai; Wang, Peng; Tian, Bobo; Hong, Zhenchen; Wang, Yutao; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Tang, Minghua; Zhou, Peng; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao; Li, Zheng

2017-06-01

Graphene and other two-dimensional materials have received considerable attention regarding their potential applications in nano-electronics. Here, we report top-gate nonvolatile memory field-effect transistors (FETs) with different layers of MoSe2 nanosheets channel gated by ferroelectric film. The conventional gate dielectric of FETs was replaced by a ferroelectric thin film that provides a ferroelectric polarization electric field, and therefore defined as an Fe-FET where the poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) was used as the gate dielectric. Among the devices with MoSe2 channels of different thicknesses, the device with a single layer of MoSe2 exhibited a large hysteresis of electronic transport with an over 105 write/erase ratio, and displayed excellent retention and endurance performance. The possible mechanism of the device’s good properties was qualitatively analyzed using band theory. Additionally, a comprehensive study comparing the memory properties of MoSe2 channels of different thicknesses is presented. Increasing the numbers of MoSe2 layers was found to cause a reduced memory window. However, MoSe2 thickness of 5 nm yielded a write/erase ratio of more than 103. The results indicate that, based on a Fe-FET structure, the combination of two-dimensional semiconductors and organic ferroelectric gate dielectrics shows good promise for future applications in nonvolatile ferroelectric memory.

A Mathematical Model for the Hippocampus: Towards the Understanding of Episodic Memory and Imagination

NASA Astrophysics Data System (ADS)

Tsuda, I.; Yamaguti, Y.; Kuroda, S.; Fukushima, Y.; Tsukada, M.

How does the brain encode episode? Based on the fact that the hippocampus is responsible for the formation of episodic memory, we have proposed a mathematical model for the hippocampus. Because episodic memory includes a time series of events, an underlying dynamics for the formation of episodic memory is considered to employ an association of memories. David Marr correctly pointed out in his theory of archecortex for a simple memory that the hippocampal CA3 is responsible for the formation of associative memories. However, a conventional mathematical model of associative memory simply guarantees a single association of memory unless a rule for an order of successive association of memories is given. The recent clinical studies in Maguire's group for the patients with the hippocampal lesion show that the patients cannot make a new story, because of the lack of ability of imagining new things. Both episodic memory and imagining things include various common characteristics: imagery, the sense of now, retrieval of semantic information, and narrative structures. Taking into account these findings, we propose a mathematical model of the hippocampus in order to understand the common mechanism of episodic memory and imagination.

Emerging memories

NASA Astrophysics Data System (ADS)

Baldi, Livio; Bez, Roberto; Sandhu, Gurtej

2014-12-01

Memory is a key component of any data processing system. Following the classical Turing machine approach, memories hold both the data to be processed and the rules for processing them. In the history of microelectronics, the distinction has been rather between working memory, which is exemplified by DRAM, and storage memory, exemplified by NAND. These two types of memory devices now represent 90% of all memory market and 25% of the total semiconductor market, and have been the technology drivers in the last decades. Even if radically different in characteristics, they are however based on the same storage mechanism: charge storage, and this mechanism seems to be near to reaching its physical limits. The search for new alternative memory approaches, based on more scalable mechanisms, has therefore gained new momentum. The status of incumbent memory technologies and their scaling limitations will be discussed. Emerging memory technologies will be analyzed, starting from the ones that are already present for niche applications, and which are getting new attention, thanks to recent technology breakthroughs. Maturity level, physical limitations and potential for scaling will be compared to existing memories. At the end the possible future composition of memory systems will be discussed.

The Memories of NK Cells: Innate-Adaptive Immune Intrinsic Crosstalk

PubMed Central

Ortolani, Claudio; del Zotto, Genny; Luchetti, Francesca; Canonico, Barbara; Artico, Marco; Papa, Stefano

2016-01-01

Although NK cells are considered part of the innate immune system, a series of evidences has demonstrated that they possess characteristics typical of the adaptive immune system. These NK adaptive features, in particular their memory-like functions, are discussed from an ontogenetic and evolutionary point of view. PMID:28078307

The Memories of NK Cells: Innate-Adaptive Immune Intrinsic Crosstalk.

PubMed

Gabrielli, Sara; Ortolani, Claudio; Del Zotto, Genny; Luchetti, Francesca; Canonico, Barbara; Buccella, Flavia; Artico, Marco; Papa, Stefano; Zamai, Loris

2016-01-01

Although NK cells are considered part of the innate immune system, a series of evidences has demonstrated that they possess characteristics typical of the adaptive immune system. These NK adaptive features, in particular their memory-like functions, are discussed from an ontogenetic and evolutionary point of view.

Dual-Process Theory and Signal-Detection Theory of Recognition Memory

ERIC Educational Resources Information Center

Wixted, John T.

2007-01-01

Two influential models of recognition memory, the unequal-variance signal-detection model and a dual-process threshold/detection model, accurately describe the receiver operating characteristic, but only the latter model can provide estimates of recollection and familiarity. Such estimates often accord with those provided by the remember-know…

Organization Theory and Memory for Prose: A Review of the Literature

ERIC Educational Resources Information Center

Shimmerlik, Susan M.

1978-01-01

Organization theory emphasizes groupings of items on the basis of a variety of characteristics, and the role of the learner as an active processor or encoder of information. Research on organization theory as it is applied to memory and recall of prose is reviewed here. (BW)

Memory and Rehearsal Characteristics of Profoundly Deaf Children.

ERIC Educational Resources Information Center

Bebko, James M.

1984-01-01

Tests 64 deaf students from oral and total communication settings to examine whether a deficiency in spontaneous strategy use accounts for their verbal short-term memory performance. Spontaneous rehearsal of both deaf samples seemed to emerge later than the hearing sample's and was inefficiently implemented and less effective in mediating recall…

Trial-to-Trial Carryover in Auditory Short-Term Memory

ERIC Educational Resources Information Center

Visscher, Kristina M.; Kahana, Michael J.; Sekuler, Robert

2009-01-01

Using a short-term recognition memory task, the authors evaluated the carryover across trials of 2 types of auditory information: the characteristics of individual study sounds (item information) and the relationships between the study sounds (study set homogeneity). On each trial, subjects heard 2 successive broadband study sounds and then…

Skilled memory in expert figure skaters.

PubMed

Deakin, J M; Allard, F

1991-01-01

The present studies extend skilled-memory theory to a domain involving the performance of motor sequences. Skilled figure skaters were better able than their less skilled counterparts to perform short skating sequences that were choreographed, rather than randomly constructed. Expert skaters encoded sequences for performance very differently from the way in which they encoded sequences that were verbally presented for verbal recall. Tasks interpolated between sequence and recall showed no significant influence on recall accuracy, implicating long-term memory in skating memory. There was little evidence for the use of retrieval structures when skaters learned the brief sequences used throughout these studies. Finally, expert skaters were able to judge the similarity of two skating elements faster than less skilled skaters, indicating a faster access to semantic memory for experts. The data indicate that skaters show many of the same skilled-memory characteristics as have been described in other skill domains involving memorization, such as digit span and memory for dinner orders.

Thermally efficient and highly scalable In2Se3 nanowire phase change memory

NASA Astrophysics Data System (ADS)

Jin, Bo; Kang, Daegun; Kim, Jungsik; Meyyappan, M.; Lee, Jeong-Soo

2013-04-01

The electrical characteristics of nonvolatile In2Se3 nanowire phase change memory are reported. Size-dependent memory switching behavior was observed in nanowires of varying diameters and the reduction in set/reset threshold voltage was as low as 3.45 V/6.25 V for a 60 nm nanowire, which is promising for highly scalable nanowire memory applications. Also, size-dependent thermal resistance of In2Se3 nanowire memory cells was estimated with values as high as 5.86×1013 and 1.04×106 K/W for a 60 nm nanowire memory cell in amorphous and crystalline phases, respectively. Such high thermal resistances are beneficial for improvement of thermal efficiency and thus reduction in programming power consumption based on Fourier's law. The evaluation of thermal resistance provides an avenue to develop thermally efficient memory cell architecture.

Further evidence that similar principles govern recall from episodic and semantic memory: the Canadian prime ministerial serial position function.

PubMed

Neath, Ian; Saint-Aubin, Jean

2011-06-01

The serial position function, with its characteristic primacy and recency effects, is one of the most ubiquitous findings in episodic memory tasks. In contrast, there are only two demonstrations of such functions in tasks thought to tap semantic memory. Here, we provide a third demonstration, showing that free recall of the prime ministers of Canada also results in a serial position function. Scale Independent Memory, Perception, and Learning (SIMPLE), a local distinctiveness model of memory that was designed to account for serial position effects in episodic memory, fit the data. According to SIMPLE, serial position functions observed in episodic and semantic memory all reflect the relative distinctiveness principle: items will be well remembered to the extent that they are more distinct than competing items at the time of retrieval. (PsycINFO Database Record (c) 2011 APA, all rights reserved).

Metacognitive inferences from other people's memory performance.

PubMed

Smith, Robert W; Schwarz, Norbert

2016-09-01

Three studies show that people draw metacognitive inferences about events from how well others remember the event. Given that memory fades over time, detailed accounts of distant events suggest that the event must have been particularly memorable, for example, because it was extreme. Accordingly, participants inferred that a physical assault (Study 1) or a poor restaurant experience (Studies 2-3) were more extreme when they were well remembered one year rather than one week later. These inferences influence behavioral intentions. For example, participants recommended a more severe punishment for a well-remembered distant rather than recent assault (Study 1). These metacognitive inferences are eliminated when people attribute the reporter's good memory to an irrelevant cause (e.g., photographic memory), thus undermining the informational value of memory performance (Study 3). These studies illuminate how people use lay theories of memory to learn from others' memory performance about characteristics of the world. (PsycINFO Database Record (c) 2016 APA, all rights reserved).

Hippocampal contributions to recollection in retrograde and anterograde amnesia.

PubMed

Gilboa, Asaf; Winocur, Gordon; Rosenbaum, R Shayna; Poreh, Amir; Gao, Fuqiang; Black, Sandra E; Westmacott, Robyn; Moscovitch, Morris

2006-01-01

Lesions restricted to the hippocampal formation and/or extended hippocampal system (hippocampal formation, fornix, mammillary bodies, and anterior thalamic nuclei) can disrupt conscious recollection in anterograde amnesia, while leaving familiarity-based memory relatively intact. Familiarity may be supported by extra-hippocampal medial temporal lobe (MTL) structures. Within-task dissociations in recognition memory best exemplify this distinction in anterograde amnesia. The authors report for the first time comparable dissociations within recognition memory in retrograde amnesia. An amnesic patient (A.D.) with bilateral fornix and septal nuclei lesions failed to recognize details pertaining to personal past events only when recollection was required, during recognition of episodic details. His intact recognition of generic and semantic details pertaining to the same events was ascribed to intact familiarity processes. Recollective processes in the controls were reflected by asymmetrical Receiver's Operating Characteristic curves, whereas the patient's Receiver's Operating Characteristic was symmetrical, suggesting that his inferior recognition performance on episodic details was reliant on familiarity processes. Anterograde and retrograde memories were equally affected, with no temporal gradient for retrograde memories. By comparison, another amnesic person (K.C.) with extensive MTL damage (involving extra-hippocampal MTL structures in addition to hippocampal and fornix lesions) had very poor recognition and no recollection of either episodic or generic/semantic details. These data suggest that the extended hippocampal system is required to support recollection for both anterograde and retrograde memories, regardless of their age.

Test-retest reliability of Brazilian version of Memorial Symptom Assessment Scale for assessing symptoms in cancer patients.

PubMed

Menezes, Josiane Roberta de; Luvisaro, Bianca Maria Oliveira; Rodrigues, Claudia Fernandes; Muzi, Camila Drumond; Guimarães, Raphael Mendonça

2017-01-01

To assess the test-retest reliability of the Memorial Symptom Assessment Scale translated and culturally adapted into Brazilian Portuguese. The scale was applied in an interview format for 190 patients with various cancers type hospitalized in clinical and surgical sectors of the Instituto Nacional de Câncer José de Alencar Gomes da Silva and reapplied in 58 patients. Data from the test-retest were double typed into a Microsoft Excel spreadsheet and analyzed by the weighted Kappa. The reliability of the scale was satisfactory in test-retest. The weighted Kappa values obtained for each scale item had to be adequate, the largest item was 0.96 and the lowest was 0.69. The Kappa subscale was also evaluated and values were 0.84 for high frequency physic symptoms, 0.81 for low frequency physical symptoms, 0.81 for psychological symptoms, and 0.78 for Global Distress Index. High level of reliability estimated suggests that the process of measurement of Memorial Symptom Assessment Scale aspects was adequate. Avaliar a confiabilidade teste-reteste da versão traduzida e adaptada culturalmente para o português do Brasil do Memorial Symptom Assessment Scale. A escala foi aplicada em forma de entrevista em 190 pacientes com diversos tipos de câncer internados nos setores clínicos e cirúrgicos do Instituto Nacional de Câncer José de Alencar Gomes da Silva e reaplicada em 58 pacientes. Os dados dos testes-retestes foram inseridos num banco de dados por dupla digitação independente em Excel e analisados pelo Kappa ponderado. A confiabilidade da escala mostrou-se satisfatória nos testes-retestes. Os valores do Kappa ponderado obtidos para cada item da escala apresentaram-se adequados, sendo o maior item de 0,96 e o menor de 0,69. Também se avaliou o Kappa das subescalas, sendo de 0,84 para sintomas físicos de alta frequência, de 0,81 para sintomas físicos de baixa frequência, de 0,81 também para sintomas psicológicos, e de 0,78 para Índice Geral de Sofrimento. Altos níveis de confiabilidade estimados permitem concluir que o processo de aferição dos itens do Memorial Symptom Assessment Scale foi adequado.

Strategic priming with multiple antigens can yield memory cell phenotypes optimized for infection with Mycobacterium tuberculosis: A computational study

DOE PAGES

Ziraldo, Cordelia; Gong, Chang; Kirschner, Denise E.; ...

2016-01-06

Lack of an effective vaccine results in 9 million new cases of tuberculosis (TB) every year and 1.8 million deaths worldwide. While many infants are vaccinated at birth with BCG (an attenuated M. bovis), this does not prevent infection or development of TB after childhood. Immune responses necessary for prevention of infection or disease are still unknown, making development of effective vaccines against TB challenging. Several new vaccines are ready for human clinical trials, but these trials are difficult and expensive; especially challenging is determining the appropriate cellular response necessary for protection. The magnitude of an immune response is likelymore » key to generating a successful vaccine. Characteristics such as numbers of central memory (CM) and effector memory (EM) T cells responsive to a diverse set of epitopes are also correlated with protection. Promising vaccines against TB contain mycobacterial subunit antigens (Ag) present during both active and latent infection. We hypothesize that protection against different key immunodominant antigens could require a vaccine that produces different levels of EM and CM for each Ag-specific memory population. We created a computational model to explore EM and CM values, and their ratio, within what we term Memory Design Space. Our model captures events involved in T cell priming within lymph nodes and tracks their circulation through blood to peripheral tissues. We used the model to test whether multiple Ag-specific memory cell populations could be generated with distinct locations within Memory Design Space at a specific time point post vaccination. Boosting can further shift memory populations to memory cell ratios unreachable by initial priming events. By strategically varying antigen load, properties of cellular interactions within the LN, and delivery parameters (e.g., number of boosts) of multi-subunit vaccines, we can generate multiple Ag-specific memory populations that cover a wide range of Memory Design Space. As a result, given a set of desired characteristics for Ag-specific memory populations, we can use our model as a tool to predict vaccine formulations that will generate those populations.« less

Strategic priming with multiple antigens can yield memory cell phenotypes optimized for infection with Mycobacterium tuberculosis: A computational study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ziraldo, Cordelia; Gong, Chang; Kirschner, Denise E.

Lack of an effective vaccine results in 9 million new cases of tuberculosis (TB) every year and 1.8 million deaths worldwide. While many infants are vaccinated at birth with BCG (an attenuated M. bovis), this does not prevent infection or development of TB after childhood. Immune responses necessary for prevention of infection or disease are still unknown, making development of effective vaccines against TB challenging. Several new vaccines are ready for human clinical trials, but these trials are difficult and expensive; especially challenging is determining the appropriate cellular response necessary for protection. The magnitude of an immune response is likelymore » key to generating a successful vaccine. Characteristics such as numbers of central memory (CM) and effector memory (EM) T cells responsive to a diverse set of epitopes are also correlated with protection. Promising vaccines against TB contain mycobacterial subunit antigens (Ag) present during both active and latent infection. We hypothesize that protection against different key immunodominant antigens could require a vaccine that produces different levels of EM and CM for each Ag-specific memory population. We created a computational model to explore EM and CM values, and their ratio, within what we term Memory Design Space. Our model captures events involved in T cell priming within lymph nodes and tracks their circulation through blood to peripheral tissues. We used the model to test whether multiple Ag-specific memory cell populations could be generated with distinct locations within Memory Design Space at a specific time point post vaccination. Boosting can further shift memory populations to memory cell ratios unreachable by initial priming events. By strategically varying antigen load, properties of cellular interactions within the LN, and delivery parameters (e.g., number of boosts) of multi-subunit vaccines, we can generate multiple Ag-specific memory populations that cover a wide range of Memory Design Space. As a result, given a set of desired characteristics for Ag-specific memory populations, we can use our model as a tool to predict vaccine formulations that will generate those populations.« less

An energy efficient and high speed architecture for convolution computing based on binary resistive random access memory

NASA Astrophysics Data System (ADS)

Liu, Chen; Han, Runze; Zhou, Zheng; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

2018-04-01

In this work we present a novel convolution computing architecture based on metal oxide resistive random access memory (RRAM) to process the image data stored in the RRAM arrays. The proposed image storage architecture shows performances of better speed-device consumption efficiency compared with the previous kernel storage architecture. Further we improve the architecture for a high accuracy and low power computing by utilizing the binary storage and the series resistor. For a 28 × 28 image and 10 kernels with a size of 3 × 3, compared with the previous kernel storage approach, the newly proposed architecture shows excellent performances including: 1) almost 100% accuracy within 20% LRS variation and 90% HRS variation; 2) more than 67 times speed boost; 3) 71.4% energy saving.

Middle-aged human apoE4 targeted-replacement mice show retention deficits on a wide range of spatial memory tasks.

PubMed

Bour, Alexandra; Grootendorst, Jeannette; Vogel, Elise; Kelche, Christian; Dodart, Jean-Cosme; Bales, Kelly; Moreau, Pierre-Henri; Sullivan, Patrick M; Mathis, Chantal

2008-11-21

Apolipoprotein (apo) E4, one of three human apoE (h-apoE) isoforms, has been identified as a major genetic risk factor for Alzheimer's disease and for cognitive deficits associated with aging. However, the biological mechanisms involving apoE in learning and memory processes are unclear. A potential isoform-dependent role of apoE in cognitive processes was studied in human apoE targeted-replacement (TR) mice. These mice express either the human apoE3 or apoE4 gene under the control of endogenous murine apoE regulatory sequences, resulting in physiological expression of h-apoE in both a temporal and spatial pattern similar to humans. Male and female apoE3-TR, apoE4-TR, apoE-knockout and C57BL/6J mice (15-18 months) were tested with spatial memory and avoidance conditioning tasks. Compared to apoE3-TR mice, spatial memory in female apoE4-TR mice was impaired based on their poor performances in; (i) the probe test of the water-maze reference memory task, (ii) the water-maze working memory task and (iii) an active avoidance Y-maze task. Retention performance on a passive avoidance task was also impaired in apoE4-TR mice, but not in other genotypes. These deficits in both spatial and avoidance memory tasks may be related to the anatomical and functional abnormalities previously reported in the hippocampus and the amygdala of apoE4-TR mice. We conclude that the apoE4-TR mice provide an excellent model for understanding the mechanisms underlying apoE4-dependent susceptibility to cognitive decline.

qPR: An adaptive partial-report procedure based on Bayesian inference.

PubMed

Baek, Jongsoo; Lesmes, Luis Andres; Lu, Zhong-Lin

2016-08-01

Iconic memory is best assessed with the partial report procedure in which an array of letters appears briefly on the screen and a poststimulus cue directs the observer to report the identity of the cued letter(s). Typically, 6-8 cue delays or 600-800 trials are tested to measure the iconic memory decay function. Here we develop a quick partial report, or qPR, procedure based on a Bayesian adaptive framework to estimate the iconic memory decay function with much reduced testing time. The iconic memory decay function is characterized by an exponential function and a joint probability distribution of its three parameters. Starting with a prior of the parameters, the method selects the stimulus to maximize the expected information gain in the next test trial. It then updates the posterior probability distribution of the parameters based on the observer's response using Bayesian inference. The procedure is reiterated until either the total number of trials or the precision of the parameter estimates reaches a certain criterion. Simulation studies showed that only 100 trials were necessary to reach an average absolute bias of 0.026 and a precision of 0.070 (both in terms of probability correct). A psychophysical validation experiment showed that estimates of the iconic memory decay function obtained with 100 qPR trials exhibited good precision (the half width of the 68.2% credible interval = 0.055) and excellent agreement with those obtained with 1,600 trials of the conventional method of constant stimuli procedure (RMSE = 0.063). Quick partial-report relieves the data collection burden in characterizing iconic memory and makes it possible to assess iconic memory in clinical populations.

qPR: An adaptive partial-report procedure based on Bayesian inference

PubMed Central

Baek, Jongsoo; Lesmes, Luis Andres; Lu, Zhong-Lin

2016-01-01

Iconic memory is best assessed with the partial report procedure in which an array of letters appears briefly on the screen and a poststimulus cue directs the observer to report the identity of the cued letter(s). Typically, 6–8 cue delays or 600–800 trials are tested to measure the iconic memory decay function. Here we develop a quick partial report, or qPR, procedure based on a Bayesian adaptive framework to estimate the iconic memory decay function with much reduced testing time. The iconic memory decay function is characterized by an exponential function and a joint probability distribution of its three parameters. Starting with a prior of the parameters, the method selects the stimulus to maximize the expected information gain in the next test trial. It then updates the posterior probability distribution of the parameters based on the observer's response using Bayesian inference. The procedure is reiterated until either the total number of trials or the precision of the parameter estimates reaches a certain criterion. Simulation studies showed that only 100 trials were necessary to reach an average absolute bias of 0.026 and a precision of 0.070 (both in terms of probability correct). A psychophysical validation experiment showed that estimates of the iconic memory decay function obtained with 100 qPR trials exhibited good precision (the half width of the 68.2% credible interval = 0.055) and excellent agreement with those obtained with 1,600 trials of the conventional method of constant stimuli procedure (RMSE = 0.063). Quick partial-report relieves the data collection burden in characterizing iconic memory and makes it possible to assess iconic memory in clinical populations. PMID:27580045

Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

NASA Astrophysics Data System (ADS)

Briggs, Benjamin D.

The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

Intravaginal infection with herpes simplex virus type-2 (HSV-2) generates a functional effector memory T cell population that persists in the murine genital tract.

PubMed

Tang, Vera A; Rosenthal, Kenneth L

2010-12-01

Although the female genital tract is the main portal of entry for sexually transmitted infections in women, we still have limited understanding of the generation, maintenance and characteristics of memory T cells in the local tissue. Here, we utilized a mouse model of intravaginal HSV-2 infection and tetramers against the immunodominant HSV glycoprotein B epitope recognized by CD8+ T cells to examine the generation, maintenance and characteristics of anti-HSV memory T cells in the genital tract following acute infection. Our results show that the highest percentage of HSVgB-specific CD8+ T cells was found in the genital tract compared to the spleen or iliac lymphnode. Indeed, although the actual number of CD8+ T cells contracted following viral clearance, approximately one quarter of the CD8+ population that remained in the genital tissue was HSVgB-specific. Memory gB-tetramer+CD8 T cells in the genital tract were positive for CD127 and KLRG1 and negative for CD62L and CCR7, thus confirming that HSV-specific CD8 cells were effector memory T cells that lack the capacity for homing to lymphoid tissues. Functionally, both memory CD8+ and CD4+ HSV-specific populations in the genital tract produced IFNγ when stimulated in vitro and CD4+ cells also produced TNFα. Genital HSVgB-specific memory T cells expressed tissue-homing integrins CD103 (αE integrin) and CD49a (VLA-1 or α1 integrin). Our findings suggest that HSV-specific memory T cells are retained in the genital tract, poised to act as an early line of defense against future virus encounter. Copyright © 2010 Elsevier Ireland Ltd. All rights reserved.

Heterozygous Che-1 KO mice show deficiencies in object recognition memory persistence.

PubMed

Zalcman, Gisela; Corbi, Nicoletta; Di Certo, Maria Grazia; Mattei, Elisabetta; Federman, Noel; Romano, Arturo

2016-10-06

Transcriptional regulation is a key process in the formation of long-term memories. Che-1 is a protein involved in the regulation of gene transcription that has recently been proved to bind the transcription factor NF-κB, which is known to be involved in many memory-related molecular events. This evidence prompted us to investigate the putative role of Che-1 in memory processes. For this study we newly generated a line of Che-1(+/-) heterozygous mice. Che-1 homozygous KO mouse is lethal during development, but Che-1(+/-) heterozygous mouse is normal in its general anatomical and physiological characteristics. We analyzed the behavioral characteristic and memory performance of Che-1(+/-) mice in two NF-κB dependent types of memory. We found that Che-1(+/-) mice show similar locomotor activity and thigmotactic behavior than wild type (WT) mice in an open field. In a similar way, no differences were found in anxiety-like behavior between Che-1(+/-) and WT mice in an elevated plus maze as well as in fear response in a contextual fear conditioning (CFC) and object exploration in a novel object recognition (NOR) task. No differences were found between WT and Che-1(+/-) mice performance in CFC training and when tested at 24h or 7days after training. Similar performance was found between groups in NOR task, both in training and 24h testing performance. However, we found that object recognition memory persistence at 7days was impaired in Che-1(+/-) heterozygous mice. This is the first evidence showing that Che-1 is involved in memory processes. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

NASA Astrophysics Data System (ADS)

Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

2018-02-01

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO x /SiO x -based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO x /SiO x structure. The stacking HfO x /SiO x -based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ~1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

Achieving Scientific Excellence: An Exploratory Study of the Role of Emotional and Motivational Factors

ERIC Educational Resources Information Center

Araújo, Liliana S.; Cruz, José Fernando A.; Almeida, Leandro S.

2017-01-01

This study investigates the perceived role of psychological factors in achieving excellence in scientific research. Six outstanding scientists aged 33-42 were interviewed. Data were analyzed inductively resulting in three main dimensions: personality traits and characteristics, psychological skills and processes, and task-specific strategies.…

Chinese College Students' Perceptions of Characteristics of Excellent Teachers

ERIC Educational Resources Information Center

Liu, Shujie; Keeley, Jared; Buskist, William

2015-01-01

We "employed the Teacher Behavior Checklist" (TBC) to investigate Chinese college students' perceptions of excellent teachers' qualities and then compared the results to those from previously collected data from American and Japanese students. Chinese students tended to favor additional structure both in the classroom and in teachers'…

Leading Schools of Excellence in Academics, Character, and Social-Emotional Development

ERIC Educational Resources Information Center

Bencivenga, Anthony S.; Elias, Maurice J.

2003-01-01

In the 21st century, students' character, social-emotional skills, and academic competencies will define school excellence. This article describes characteristics of visionary leadership for such schools based on settings already characterized by strengths in "EQ + IQ = Best Leadership Practices for Caring and Successful Schools." Core beliefs…

How Japanese adults perceive memory change with age: middle-aged adults with memory performance as high as young adults evaluate their memory abilities as low as older adults.

PubMed

Kinjo, Hikari; Shimizu, Hiroyuki

2014-01-01

The characteristics of self-referent beliefs about memory change with age. The relationship between beliefs and memory performance of three age groups of Japanese adults was investigated. The beliefs measured by the Personal Beliefs about Memory Instrument (Lineweaver & Hertzog, 1998) differed among the age groups and between sexes. In most scales, the ratings by middle-aged adults were as low as those by older adults, which were lower than those by young adults. Women perceived their memory abilities as lower than men's, with no interaction between age and sex, suggesting the difference remains across the lifespan. For middle-aged adults, the better they performed in cued-recall, free recall, and recognition, the lower they evaluated their memory self-efficacy, while few relationships were found for other groups. Our results suggest that cognitive beliefs change with age and that investigating the beliefs of the middle-aged adults is indispensable to elucidate the transition of beliefs.

The impact of imprisonment on overgeneral autobiographical memory in former political prisoners.

PubMed

Kleim, Birgit; Griffith, James W; Gäbler, Ira; Schützwohl, Matthias; Maercker, Andreas

2013-10-01

Traumatic experiences may dramatically influence later behavior and cognitive processing. This study investigated how trauma shapes the way that we remember personal experiences. Specifically, we investigated overgeneral autobiographical memory, which is the tendency to remember autobiographical events in an overgeneral rather than specific way. We administered the Autobiographical Memory Test (Williams & Broadbent,) to 86 survivors of political imprisonment 37 years after they had been released from imprisonment. Depression and posttraumatic stress disorder were not significantly related to overgeneral autobiographical memory. Significant overgeneral autobiographical memory correlates included embitterment, r = -.28, and being released to former East Germany, d = 0.67. Survivors with social support, r = .30 were better able to recall specific memories. Certain trauma characteristics and the way the trauma is processed may thus influence how personal memories are later remembered. This study also furthers the understanding of memory processes in political prisoners, who are not commonly studied in psychological research. Copyright © 2013 International Society for Traumatic Stress Studies.

Visual imagery in autobiographical memory: The role of repeated retrieval in shifting perspective

PubMed Central

Butler, Andrew C.; Rice, Heather J.; Wooldridge, Cynthia L.; Rubin, David C.

2016-01-01

Recent memories are generally recalled from a first-person perspective whereas older memories are often recalled from a third-person perspective. We investigated how repeated retrieval affects the availability of visual information, and whether it could explain the observed shift in perspective with time. In Experiment 1, participants performed mini-events and nominated memories of recent autobiographical events in response to cue words. Next, they described their memory for each event and rated its phenomenological characteristics. Over the following three weeks, they repeatedly retrieved half of the mini-event and cue-word memories. No instructions were given about how to retrieve the memories. In Experiment 2, participants were asked to adopt either a first- or third-person perspective during retrieval. One month later, participants retrieved all of the memories and again provided phenomenology ratings. When first-person visual details from the event were repeatedly retrieved, this information was retained better and the shift in perspective was slowed. PMID:27064539

Remembering episodic memories is not necessary for forgetting of negative words: Semantic retrieval can cause forgetting of negative words.

PubMed

Kobayashi, Masanori; Tanno, Yoshihiko

2015-06-01

Retrieval of a memory can induce forgetting of other related memories, which is known as retrieval-induced forgetting. Although most studies have investigated retrieval-induced forgetting by remembering episodic memories, this also can occur by remembering semantic memories. The present study shows that retrieval of semantic memories can lead to forgetting of negative words. In two experiments, participants learned words and then engaged in retrieval practice where they were asked to recall words related to the learned words from semantic memory. Finally, participants completed a stem-cued recall test for the learned words. The results showed forgetting of neutral and negative words, which was characteristic of semantic retrieval-induced forgetting. A certain degree of overlapping features, except same learning episode, is sufficient to cause retrieval-induced forgetting of negative words. Given the present results, we conclude that retrieval-induced forgetting of negative words does not require recollection of episodic memories.

Predictors of Processing-Based Task Performance in Bilingual and Monolingual Children

PubMed Central

Buac, Milijana; Gross, Megan; Kaushanskaya, Margarita

2016-01-01

In the present study we examined performance of bilingual Spanish-English-speaking and monolingual English-speaking school-age children on a range of processing-based measures within the framework of Baddeley’s working memory model. The processing-based measures included measures of short-term memory, measures of working memory, and a novel word-learning task. Results revealed that monolinguals outperformed bilinguals on the short-term memory tasks but not the working memory and novel word-learning tasks. Further, children’s vocabulary skills and socioeconomic status (SES) were more predictive of processing-based task performance in the bilingual group than the monolingual group. Together, these findings indicate that processing-based tasks that engage verbal working memory rather than short-term memory may be better-suited for diagnostic purposes with bilingual children. However, even verbal working memory measures are sensitive to bilingual children’s language-specific knowledge and demographic characteristics, and therefore may have limited clinical utility. PMID:27179914

Mnemonic training reshapes brain networks to support superior memory

PubMed Central

Dresler, Martin; Shirer, William R.; Konrad, Boris N.; Müller, Nils C.J.; Wagner, Isabella C.; Fernández, Guillén; Czisch, Michael; Greicius, Michael D.

2017-01-01

Summary Memory skills strongly differ across the general population, however little is known about the brain characteristics supporting superior memory performance. Here, we assess functional brain network organization of 23 of the world’s most successful memory athletes and matched controls by fMRI during both task-free resting state baseline and active memory encoding. We demonstrate that in a group of naïve controls, functional connectivity changes induced by six weeks of mnemonic training were correlated with the network organization that distinguishes athletes from controls. During rest, this effect was mainly driven by connections between rather than within the visual, medial temporal lobe and default mode networks, whereas during task it was driven by connectivity within these networks. Similarity with memory athlete connectivity patterns predicted memory improvements up to 4 months after training. In conclusion, mnemonic training drives distributed rather than regional changes, reorganizing the brain’s functional network organization to enable superior memory performance. PMID:28279356

Motivation for weight loss affects recall from autobiographical memory in dieters.

PubMed

Johannessen, Kim Berg; Berntsen, Dorthe

2009-01-01

Two studies examined the connection between motivation for weight loss and autobiographical memory by comparing characteristics of autobiographical memories between dieters and non-dieters. Study 1 involved 29 normal/overweight dieters and 48 non-dieters, and Study 2 involved 18 obese dieters and 18 normal weight non-dieters. Memories recalled in response to dieting-related cue words were rated as more central to the person's identity and life story and contained more body- or weight-related elements for the dieters than the non-dieters. No differences between dieters and non-dieters were found on memories recalled in response to neutral cue words. The findings are discussed in relation to the notions of the working self (Conway & Pleydell-Pearce, 2000) and current concerns (Klinger, 1978).

High density submicron magnetoresistive random access memory (invited)

NASA Astrophysics Data System (ADS)

Tehrani, S.; Chen, E.; Durlam, M.; DeHerrera, M.; Slaughter, J. M.; Shi, J.; Kerszykowski, G.

1999-04-01

Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal-oxide-semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated.

The relationship between loss of parents in the holocaust, intrusive memories, and distress among child survivors.

PubMed

Letzter-Pouw, Sonia; Werner, Perla

2012-04-01

The prevalence of intrusive memories of the Holocaust and their relationship to distress was examined among 272 child survivors in Israel. Using attachment theory as a conceptual framework, the authors also examined the effects of type of experience and loss of parents in the Holocaust, psychological resources, other life events, and sociodemographic characteristics on distress and symptomatic behavior. Eighty five percent of the participants reported suffering from intrusive memories. Structural equation modeling showed that survivors who lost one or both parents in the Holocaust suffered more distress because of more intrusive memories. These findings suggest that intrusive memories may be part of unfinished mourning processes related to the loss of parents in the Holocaust. © 2012 American Orthopsychiatric Association.

Neuropsychological and SPECT scan findings during and after transient global amnesia: evidence for the differential impairment of remote episodic memory.

PubMed

Evans, J; Wilson, B; Wraight, E P; Hodges, J R

1993-11-01

A patient had neuropsychological testing during, and at two days and seven weeks after a transient global amnesia (TGA) attack. During the attack she exhibited a characteristically profound anterograde amnesia but a limited remote memory loss; the most striking impairment was a deficit in personal episodic memory revealed by her performance on the Autobiographical Memory Interview. Personal and general semantic information was less impaired although there were indications of a temporal gradient in the impairment. When tested after the attack, she demonstrated normal anterograde and retrograde memory. A SPECT scan performed during TGA showed a focal reduction in cerebral perfusion in the postero-medial temporal lobes bilaterally which had resolved after seven weeks.

Nanoscale phase change memory materials.

PubMed

Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

2012-08-07

Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

Non-Volatile High Speed & Low Power Charge Trapping Devices

NASA Astrophysics Data System (ADS)

Kim, Moon Kyung; Tiwari, Sandip

2007-06-01

We report the operational characteristics of ultra-small-scaled SONOS (below 50 nm gate width and length) and SiO2/SiO2 structural devices with 0.5 um gate width and length where trapping occurs in a very narrow region. The experimental work summarizes the memory characteristics of retention time, endurance cycles, and speed in SONOS and SiO2/SiO2 structures. Silicon nitride has many defects to hold electrons as charge storage media in SONOS memory. Defects are also incorporated during growth and deposition in device processing. Our experiments show that the interface between two oxides, one grown and one deposited, provides a remarkable media for electron storage with a smaller gate stack and thus lower operating voltage. The exponential dependence of the time on the voltage is reflected in the characteristic energy. It is ˜0.44 eV for the write process and ˜0.47 eV for the erase process in SiO2/SiO2 structural device which is somewhat more efficient than those of SONOS structure memory.

Characterization of mechanical properties of pseudoelastic shape memory alloys under harmonic excitation

NASA Astrophysics Data System (ADS)

Böttcher, J.; Jahn, M.; Tatzko, S.

2017-12-01

Pseudoelastic shape memory alloys exhibit a stress-induced phase transformation which leads to high strains during deformation of the material. The stress-strain characteristic during this thermomechanical process is hysteretic and results in the conversion of mechanical energy into thermal energy. This energy conversion allows for the use of shape memory alloys in vibration reduction. For the application of shape memory alloys as vibration damping devices a dynamic modeling of the material behavior is necessary. In this context experimentally determined material parameters which accurately represent the material behavior are essential for a reliable material model. Subject of this publication is the declaration of suitable material parameters for pseudoelastic shape memory alloys and the methodology of their identification from experimental investigations. The used test rig was specifically designed for the characterization of pseudoelastic shape memory alloys.

Sparse distributed memory: understanding the speed and robustness of expert memory

PubMed Central

Brogliato, Marcelo S.; Chada, Daniel M.; Linhares, Alexandre

2014-01-01

How can experts, sometimes in exacting detail, almost immediately and very precisely recall memory items from a vast repertoire? The problem in which we will be interested concerns models of theoretical neuroscience that could explain the speed and robustness of an expert's recollection. The approach is based on Sparse Distributed Memory, which has been shown to be plausible, both in a neuroscientific and in a psychological manner, in a number of ways. A crucial characteristic concerns the limits of human recollection, the “tip-of-tongue” memory event—which is found at a non-linearity in the model. We expand the theoretical framework, deriving an optimization formula to solve this non-linearity. Numerical results demonstrate how the higher frequency of rehearsal, through work or study, immediately increases the robustness and speed associated with expert memory. PMID:24808842

A study of the viability of exploiting memory content similarity to improve resilience to memory errors

DOE PAGES

Levy, Scott; Ferreira, Kurt B.; Bridges, Patrick G.; ...

2014-12-09

Building the next-generation of extreme-scale distributed systems will require overcoming several challenges related to system resilience. As the number of processors in these systems grow, the failure rate increases proportionally. One of the most common sources of failure in large-scale systems is memory. In this paper, we propose a novel runtime for transparently exploiting memory content similarity to improve system resilience by reducing the rate at which memory errors lead to node failure. We evaluate the viability of this approach by examining memory snapshots collected from eight high-performance computing (HPC) applications and two important HPC operating systems. Based on themore » characteristics of the similarity uncovered, we conclude that our proposed approach shows promise for addressing system resilience in large-scale systems.« less

Memories of the terrorist attacks of September 11, 2001: a study of the consistency and phenomenal characteristics of flashbulb memories.

PubMed

Ferré Romeu, Pilar

2006-05-01

In this study, I investigated students' memories of the terrorist attacks of September 11, 2001, carried out by Al Qaeda terrorists against the World Trade Center in New York and the Pentagon in Washington. Participants completed on two occasions (2 weeks and 8 months after the events took place) a memory questionnaire that included an assessment of the phenomenal richness of their memories. The results showed that the participants remembered very well the circumstances in which they first heard about the terrorist attacks, that they were very confident about this information, and that these memories were characterized by a high phenomenal richness. Over time, there was a decrease in all of these variables, but people's ratings of phenomenology and confidence were still very high.

Does constraining memory maintenance reduce visual search efficiency?

PubMed

Buttaccio, Daniel R; Lange, Nicholas D; Thomas, Rick P; Dougherty, Michael R

2018-03-01

We examine whether constraining memory retrieval processes affects performance in a cued recall visual search task. In the visual search task, participants are first presented with a memory prompt followed by a search array. The memory prompt provides diagnostic information regarding a critical aspect of the target (its colour). We assume that upon the presentation of the memory prompt, participants retrieve and maintain hypotheses (i.e., potential target characteristics) in working memory in order to improve their search efficiency. By constraining retrieval through the manipulation of time pressure (Experiments 1A and 1B) or a concurrent working memory task (Experiments 2A, 2B, and 2C), we directly test the involvement of working memory in visual search. We find some evidence that visual search is less efficient under conditions in which participants were likely to be maintaining fewer hypotheses in working memory (Experiments 1A, 2A, and 2C), suggesting that the retrieval of representations from long-term memory into working memory can improve visual search. However, these results should be interpreted with caution, as the data from two experiments (Experiments 1B and 2B) did not lend support for this conclusion.

Neuroticism (not depressive symptoms) predicts memory complaints in some community-dwelling older adults.

PubMed

Merema, Matt R; Speelman, Craig P; Foster, Jonathan K; Kaczmarek, Elizabeth A

2013-08-01

To examine whether depressive symptoms are useful predictors of subjective memory complaints in community-dwelling older adults, beyond the predictive utility already provided by memory performance and characteristics of personality. Using hierarchical regression, we examined the relationship between depressive symptoms and subjective memory complaints, controlling for age, gender, education, memory performance, conscientiousness, and neuroticism. Community-dwelling older adults aged 66 to 90 years (N = 177) who responded to a newspaper advertisement for a memory study in Perth, Western Australia. The General Frequency of Forgetting scale (for memory complaints), Depression Anxiety Stress Scales (for depressive symptoms), NEO-Five Factor Inventory (for conscientiousness and neuroticism), and the Visual Reproduction and Logical Memory subtests from the Wechsler Memory Scale-4th Edition (for visual and verbal memory). The hierarchical regression analysis indicated that while depressive symptoms significantly predicted memory complaints after variance associated with age, gender, education, memory performance, and conscientiousness was partialled out, they accounted for almost none of the variance in complaints when neuroticism was partialled out. The well-established relationship between depression and memory complaints may exist in some community-dwelling older adult populations only on account of the manner in which both are associated with neuroticism. Copyright © 2013 American Association for Geriatric Psychiatry. Published by Elsevier Inc. All rights reserved.

Memory skills mediating superior memory in a world-class memorist.

PubMed

Ericsson, K Anders; Cheng, Xiaojun; Pan, Yafeng; Ku, Yixuan; Ge, Yi; Hu, Yi

2017-10-01

Laboratory studies have investigated how individuals with normal memory spans attained digit spans over 80 digits after hundreds of hours of practice. Experimental analyses of their memory skills suggested that their attained memory spans were constrained by the encoding time, for the time needed will increase if the length of digit sequences to be memorised becomes longer. These constraints seemed to be violated by a world-class memorist, Feng Wang (FW), who won the World Memory Championship by recalling 300 digits presented at 1 digit/s. In several studies we examined FW's memory skills underlying his exceptional performance. First FW reproduced his superior memory span of 200 digits under laboratory condition, and we obtained his retrospective reports describing his encoding/retrieval processes (Experiment 1). Further experiments used self-paced memorisation to identify temporal characteristics of encoding of digits in 4-digit clusters (Experiment 2), and explored memory encoding at presentation speeds much faster than 1 digit/s (Experiment 3). FW's superiority over previous digit span experts is explained by his acquisition of well-known mnemonic techniques and his training that focused on rapid memorisation. His memory performance supports the feasibility of acquiring memory skills for improved working memory based on storage in long-term memory.

Fluorogel elastomers with tunable transparency, elasticity, shape-memory, and antifouling properties

DOE PAGES

Yao, Xi; Dunn, Stuart S.; Kim, Philseok; ...

2014-03-18

In this study, omniphobic fluorogel elastomers were prepared by photocuring perfluorinated acrylates and a perfluoropolyether crosslinker. By tuning either the chemical composition or the temperature that control the crystallinity of the resulting polymer chains, a broad range of optical and mechanical properties of the fluorogel can be achieved. After infusing with fluorinated lubricants, the fluorogels showed excellent resistance to wetting by various liquids and anti-biofouling behavior, while maintaining cytocompatiblity.

Proceedings of the Conference on the Design of Experiments (23rd) S

DTIC Science & Technology

1978-07-01

of Statistics, Carnegie-Mellon University. * [12] Duran , B. S . (1976). A survey of nonparametric tests for scale. Comunications in Statistics A5, 1287...the twenty-third Design of Experiments Conference was the U. S . Army Combat Development Experimentation Command, Fort Ord, California. Excellent...Availability Prof. G. E. P. Box Time Series Modelling University of Wisconsin Dr. Churchill Eisenhart was recipient this year of the Samuel S . Wilks Memorial

Magnet/Hall-Effect Random-Access Memory

NASA Technical Reports Server (NTRS)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

Questioning short-term memory and its measurement: Why digit span measures long-term associative learning.

PubMed

Jones, Gary; Macken, Bill

2015-11-01

Traditional accounts of verbal short-term memory explain differences in performance for different types of verbal material by reference to inherent characteristics of the verbal items making up memory sequences. The role of previous experience with sequences of different types is ostensibly controlled for either by deliberate exclusion or by presenting multiple trials constructed from different random permutations. We cast doubt on this general approach in a detailed analysis of the basis for the robust finding that short-term memory for digit sequences is superior to that for other sequences of verbal material. Specifically, we show across four experiments that this advantage is not due to inherent characteristics of digits as verbal items, nor are individual digits within sequences better remembered than other types of individual verbal items. Rather, the advantage for digit sequences stems from the increased frequency, compared to other verbal material, with which digits appear in random sequences in natural language, and furthermore, relatively frequent digit sequences support better short-term serial recall than less frequent ones. We also provide corpus-based computational support for the argument that performance in a short-term memory setting is a function of basic associative learning processes operating on the linguistic experience of the rememberer. The experimental and computational results raise questions not only about the role played by measurement of digit span in cognition generally, but also about the way in which long-term memory processes impact on short-term memory functioning. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

[Construction of competency model of 'excellent doctor' in Chinese medicine].

PubMed

Jin, Aning; Tian, Yongquan; Zhao, Taiyang

2014-05-01

To evaluate outstanding and ordinary persons from personal characteristics using competency as the important criteria, which is the future direction of medical education reform. We carried on a behavior event interview about famous doctors of old traditional Chinese medicine, compiled competency dictionary, proceed control prediction test. SPSS and AMOS were used to be data analysis tools on statistics. We adopted the model of peer assessment and contrast to carry out empirical research. This project has carried on exploratory factor analysis and confirmatory factor analysis, established a "5A" competency model which include moral ability, thinking ability, communication ability, learning and practical ability. Competency model of "excellent doctor" in Chinese medicine has been validated, with good reliability and validity, and embodies the characteristics of traditional Chinese medicine personnel training, with theoretical and practical significance for excellence in medicine physician training.

The Monkey game: A computerized verbal working memory task for self-reliant administration in primary school children.

PubMed

Van de Weijer-Bergsma, Eva; Kroesbergen, Evelyn H; Jolani, Shahab; Van Luit, Johannes E H

2016-06-01

In two studies, the psychometric properties of an online self-reliant verbal working memory task (the Monkey game) for primary school children (6-12 years of age) were examined. In Study 1, children (n = 5,203) from 31 primary schools participated. The participants completed computerized verbal and visual-spatial working memory tasks (i.e., the Monkey game and the Lion game) and a paper-and-pencil version of Raven's Standard Progressive Matrices. Reading comprehension and math achievement test scores were obtained from the schools. First, the internal consistency of the Monkey game was examined. Second, multilevel modeling was used to examine the effects of classroom membership. Multilevel multivariate regression analysis was used to examine the Monkey game's concurrent relationship with the Lion game and its predictive relationships with reading comprehension and math achievement. Also, age-related differences in performance were examined. In Study 2, the concurrent relationships between the Monkey game and two tester-led computerized working memory tasks were further examined (n = 140). Also, the 1- and 2-year stability of the Monkey game was investigated. The Monkey game showed excellent internal consistency, good concurrent relationships with the other working memory measures, and significant age differences in performance. Performance on the Monkey game was also predictive of subsequent reading comprehension and mathematics performance, even after controlling for individual differences in intelligence. Performance on the Monkey game was influenced by classroom membership. The Monkey game is a reliable and suitable instrument for the online computerized and self-reliant assessment of verbal working memory in primary school children.

Memory Characteristics and Modality in Multimedia Learning: An Aptitude-Treatment-Interaction Study

ERIC Educational Resources Information Center

Seufert, Tina; Schutze, Maren; Brunken, Roland

2009-01-01

According to the modality effect in multimedia, a text accompanying a picture should be auditorily presented instead of visually in order to avoid split of attention. In two experimental studies (34 and 78 participants, respectively), the impact and possible compensatory effects of two aptitude variables, that is, memory strategy skills and…

Emotional Enhancement Effect of Memory: Removing the Influence of Cognitive Factors

ERIC Educational Resources Information Center

Sommer, Tobias; Glascher, Jan; Moritz, Steffen; Buchel, Christian

2008-01-01

According to the modulation hypothesis, arousal is the crucial factor in the emotional enhancement of memory (EEM). However, the multifactor theory of the EEM recently proposed that cognitive characteristics of emotional stimuli, e.g., relatedness and distinctiveness, also play an important role. The current study aimed to investigate the…

Working Memory Load and Automaticity in Relation to Mental Multiplication

ERIC Educational Resources Information Center

Ding, Yi; Liu, Ru-De; Xu, Le; Wang, Jia; Zhang, Dake

2017-01-01

The authors' aim was to examine the relations among mental multiplication, working memory load (WML), and automaticity by alternating the difficulty level of task characteristics. In Experiment 1, involving 30 fifth-grade students with mixed abilities, a 2 (WML) × 2 (automaticity) design was utilized. In Experiment 2, involving 21 high-achieving…