Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb)2(Te,Se)3

NASA Astrophysics Data System (ADS)

Jeffries, Jason; Butch, N. P.; Vohra, Y. K.; Weir, S. T.

2014-03-01

The group V-VI compounds--like Bi2Se3, Sb2Te3, or Bi2Te3--have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and compare that behavior with other binary V-VI compounds under pressure. Lawrence Livermore National Laboratory is operated by Lawrence Livermore National Security, LLC, for the U.S. Department of Energy, National Nuclear Security Administration under Contract DE-AC52-07NA27344.

Antiferromagnetic d-Electron Exchange via a Spin-Singlet π-Electron Ground State in an Organic Conductor

NASA Astrophysics Data System (ADS)

Tokumoto, T.; Brooks, J. S.; Oshima, Y.; Choi, E. S.; Brunel, L. C.; Akutsu, H.; Kaihatsu, T.; Yamada, J.; van Tol, J.

2008-04-01

Electron spin resonance reveals the spin behavior of conduction (π) and localized (d) electrons in β-(BDA-TTP)2MCl4 (M=Fe, Ga). Both the Ga3+(S=0) and Fe3+(S=5/2) compounds exhibit a metal-insulator transition at 113 K with the simultaneous formation of a spin-singlet ground state in the π electron system of the donor molecules. The behavior is consistent with charge ordering in β-(BDA-TTP)2MCl4 at the metal-insulator transition. At 5 K, the Fe3+ compound orders antiferromagnetically, even though the π electrons, which normally would facilitate magnetic exchange, are localized nonmagnetic singlets.

A Design Method for Topologically Insulating Metamaterials

NASA Astrophysics Data System (ADS)

Matlack, Kathryn; Serra-Garcia, Marc; Palermo, Antonio; Huber, Sebastian; Daraio, Chiara

Topological insulators are a unique class of electronic materials that exhibit protected edge states that are insulating in the bulk, and immune to back-scattering and defects. Discrete models, such as mass-spring systems, provide a means to translate these properties, based on the quantum hall spin effect, to the mechanical domain. This talk will present how to engineer a 2D mechanical metamaterial that supports topologically-protected and defect-immune edge states, directly from the mass-spring model of a topological insulator. The design method uses combinatorial searches plus gradient-based optimizations to determine the configuration of the metamaterials building blocks that leads to the global behavior specified by the target mass-spring model. We use metamaterials with weakly coupled unit cells to isolate the dynamics within our frequency range of interest and to enable a systematic design process. This approach can generally be applied to implement behaviors of a discrete model directly in mechanical, acoustic, or photonic metamaterials within the weak-coupling regime. This work was partially supported by the ETH Postdoctoral Fellowship, and by the Swiss National Science Foundation.

Influence of deposition conditions on the nature of epitaxial SrIrO3 on STO (001)

NASA Astrophysics Data System (ADS)

Bhat, Shwetha G.; Sebastian, Nirmal K.; Kumar, P. S. Anil

2018-05-01

SrIrO3 (SIO) is one of the materials known to exhibit a high spin-orbit coupling with correlated semi-metallic ground state, along with the topological states, as proven in recent times. In this regard, the SIO thin films grown by us on SrTiO3 (001) at certain deposition conditions, exhibit a low temperature magneto-transport behavior which is analogous to the materials with topological states. Further, we have explored various deposition conditions of SIO such as partial pressure of O2 and different temperatures of growth for different thickness of SIO. In addition, from the electrical transport properties, SIO thin films found to exhibit semi-metallic nature with either insulating-like or a crossover from metal-like to insulating-like behavior based on the conditions chosen for the growth. Moreover, the magneto-transport data of various SIO thin films are found to be obeying the usual B2 (Lorentzian) behavior in majority of the cases. At the same time, we have also observed the weak-localization and weak-antilocalization effects; along with a linear magneto-resistance at low temperature ranges. Thus, from our extensive measurements, it becomes clear that SIO thin films can exhibit wide varieties of magneto-transport properties based on the deposition conditions. Plethora of interesting properties exhibited by the highly spin-orbit coupled SIO epitaxial thin films at lower temperatures in the presence of magnetic field makes the material to be promising for the future applications in the field of spintronics.

Universal Behavior of Quantum Spin Liquid and Optical Conductivity in the Insulator Herbertsmithite

NASA Astrophysics Data System (ADS)

Shaginyan, V. R.; Msezane, A. Z.; Stephanovich, V. A.; Popov, K. G.; Japaridze, G. S.

2018-04-01

We analyze optical conductivity with the goal to demonstrate experimental manifestation of a new state of matter, the so-called fermion condensate. Fermion condensates are realized in quantum spin liquids, exhibiting typical behavior of heavy-fermion metals. Measurements of the low-frequency optical conductivity collected on the geometrically frustrated insulator herbertsmithite provide important experimental evidence of the nature of its quantum spin liquid composed of spinons. To analyze recent measurements of the herbertsmithite optical conductivity at different temperatures, we employ a model of strongly correlated quantum spin liquid located near the fermion condensation phase transition. Our theoretical analysis of the optical conductivity allows us to expose the physical mechanism of its temperature dependence. We also predict a dependence of the optical conductivity on a magnetic field. We consider an experimental manifestation (optical conductivity) of a new state of matter (so-called fermion condensate) realized in quantum spin liquids, for, in many ways, they exhibit typical behavior of heavy-fermion metals. Measurements of the low-frequency optical conductivity collected on the geometrically frustrated insulator herbertsmithite produce important experimental evidence of the nature of its quantum spin liquid composed of spinons. To analyze recent measurements of the herbertsmithite optical conductivity at different temperatures, we employ a model of a strongly correlated quantum spin liquid located near the fermion condensation phase transition. Our theoretical analysis of the optical conductivity allows us to reveal the physical mechanism of its temperature dependence. We also predict a dependence of the optical conductivity on a magnetic field.

Treeing phenomenon of thermoplastic polyethylene blends for recyclable cable insulation materials

NASA Astrophysics Data System (ADS)

Li, Lunzhi; Zhang, Kai; Zhong, Lisheng; Gao, Jinghui; Xu, Man; Chen, Guanghui; Fu, Mingli

2017-02-01

Owing to its good recyclability and low processing energy consumption, non-crosslinked polyethylene blends (e.g. LLDPE-HDPE blends) are considered as one of potential environmental-friendly substitutions for crosslinked polyethylene (XLPE) as cable insulation material. Although extensive work has been performed for measuring the basic dielectric properties, there is a lack of the investigations on the aging properties for such a material system, which hinders the evaluation of reliability and lifetime of the material for cable insulation. In this paper, we study the electric aging phenomenon of 0.7LLDPE-0.3HDPE blending material by investigating the treeing behavior, and its comparison with XLPE and LLDPE. Treeing tests show that the 0.7LLDPE-0.3HDPE blends have lower probability for treeing as well as smaller treeing dimensions. Further thermal analysis and microstructure study results suggest that the blends exhibit larger proportion of thick lamellae and higher crystallinity with homogeneously-distributed amorphous region, which is responsible for good anti-treeing performance. Our finding provides the evidence that the 0.7LLDPE-0.3HDPE blends exhibits better electric-aging-retardance properties than XLPE, which may result in a potential application for cable insulation.

Nonlinear dynamics induced anomalous Hall effect in topological insulators

PubMed Central

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-01

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics. PMID:26819223

Nonlinear dynamics induced anomalous Hall effect in topological insulators.

PubMed

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2016-01-28

We uncover an alternative mechanism for anomalous Hall effect. In particular, we investigate the magnetisation dynamics of an insulating ferromagnet (FM) deposited on the surface of a three-dimensional topological insulator (TI), subject to an external voltage. The spin-polarised current on the TI surface induces a spin-transfer torque on the magnetisation of the top FM while its dynamics can change the transmission probability of the surface electrons through the exchange coupling and hence the current. We find a host of nonlinear dynamical behaviors including multistability, chaos, and phase synchronisation. Strikingly, a dynamics mediated Hall-like current can arise, which exhibits a nontrivial dependence on the channel conductance. We develop a physical understanding of the mechanism that leads to the anomalous Hall effect. The nonlinear dynamical origin of the effect stipulates that a rich variety of final states exist, implying that the associated Hall current can be controlled to yield desirable behaviors. The phenomenon can find applications in Dirac-material based spintronics.

Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction

NASA Astrophysics Data System (ADS)

Yuan, Ye; Wang, Mao; Xu, Chi; Hübner, René; Böttger, Roman; Jakiela, Rafal; Helm, Manfred; Sawicki, Maciej; Zhou, Shengqiang

2018-03-01

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms

NASA Astrophysics Data System (ADS)

Nobukane, Hiroyoshi; Matsuyama, Toyoki; Tanda, Satoshi

2017-01-01

The quantum anomaly that breaks the symmetry, for example the parity and the chirality, in the quantization leads to a physical quantity with a topological Chern invariant. We report the observation of a Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms by employing electric transport. We observed the superconductor-to-insulator transition by reducing the thickness of Sr2RuO4 single crystals. The appearance of a gap structure in the insulating phase implies local superconductivity. Fractional quantized conductance was observed without an external magnetic field. We found an anomalous induced voltage with temperature and thickness dependence, and the induced voltage exhibited switching behavior when we applied a magnetic field. We suggest that there was fractional magnetic-field-induced electric polarization in the interlayer. These anomalous results are related to topological invariance. The fractional axion angle Θ = π/6 was determined by observing the topological magneto-electric effect in the Bose-insulating phase of Sr2RuO4 nanofilms.

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal—insulator phase transition properties

NASA Astrophysics Data System (ADS)

Liang, Ji-Ran; Wu, Mai-Jun; Hu, Ming; Liu, Jian; Zhu, Nai-Wei; Xia, Xiao-Xu; Chen, Hong-Da

2014-07-01

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal—insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (1¯11) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal—insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal—insulator transition.

Nonequilibrium Second-Order Phase Transition in a Cooper-Pair Insulator.

PubMed

Doron, A; Tamir, I; Mitra, S; Zeltzer, G; Ovadia, M; Shahar, D

2016-02-05

In certain disordered superconductors, upon increasing the magnetic field, superconductivity terminates with a direct transition into an insulating phase. This phase is comprised of localized Cooper pairs and is termed a Cooper-pair insulator. The current-voltage characteristics measured in this insulating phase are highly nonlinear and, at low temperatures, exhibit abrupt current jumps. Increasing the temperature diminishes the jumps until the current-voltage characteristics become continuous. We show that a direct correspondence exists between our system and systems that undergo an equilibrium, second-order, phase transition. We illustrate this correspondence by comparing our results to the van der Waals equation of state for the liquid-gas mixture. We use the similarities to identify a critical point where an out of equilibrium second-order-like phase transition occurs in our system. Approaching the critical point, we find a power-law behavior with critical exponents that characterizes the transition.

Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

NASA Astrophysics Data System (ADS)

Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

Some studies on the behavior of W-RE thermocouple materials at high temperatures

NASA Technical Reports Server (NTRS)

Burns, G. W.; Hurst, W. S.

1972-01-01

Bare 0.25 mm diameter W-Re alloy thermoelements (W, W-3% Re, W-5% Re and W-25%) and BeO-insulated W-3% Re and W-25% Re thermoelements were examined for metallurgical, chemical and thermal emf changes after testing for periods up to 1000 hours at temperatures principally in the range 2000 to 2400 K. Environments for the tests consisted of high purity argon, hydrogen, helium or nitrogen gases. Commercially obtained bare-wire thermoelements typically exhibited a shift in their emf-temperature relationship upon initial exposure. The shift was completed by thermally aging the W-3% Re thermoelement for 1 hour and the W-25% Re thermoelement for 2 minutes at 2400 K in argon or hydrogen. Aged thermoelements experienced no appreciable drift with subsequent exposure at 2400 K in the gaseous environments. The chemically doped W3% Re thermoelement retained a small-grained structure for exposure in excess of 50 hours at 2400 K. BeO-insulated thermoelement assemblies showed varied behavior that depended upon the method of exposure. However, when the assemblies were heated in a furnace, no serious material incompatibility problems were found if the materials were given prior thermal treatments. Thermocouples, assembled from aged W-3% Re and W-25% Re thermoelements and degassed sintered BeO insulators, exhibited a drift of only 2 to 3 K during exposure in argon at 2070 K for 1029 hours.

Electrohydrodynamic behavior of water droplets on a horizontal super hydrophobic surface and its self-cleaning application

NASA Astrophysics Data System (ADS)

Li, Jian; Wei, Yuan; Huang, Zhengyong; Wang, Feipeng; Yan, Xinzhu; Wu, Zhuolin

2017-05-01

Moisture is a significant factor that affects the insulation performance of outdoor high-voltage insulators in power systems. Accumulation of water droplets on insulators causes severe problems such as flashover of insulators and power outage. In this study, we develop a method to fabricate a micro/nano hierarchical super hydrophobic surface. The as-prepared super hydrophobic surface exhibits a water contact angle (WCA) of 160.4 ± 2°, slide angle (SA) less than 1° and surface free energy (SFE) of 5.99 mJ/m2. We investigated the electrohydropdynamic behavior of water droplet on a horizontal super hydrophobic surface compared with hydrophobic RTV silicone rubber surface which was widely used as anti-pollution coating or shed material of composite insulator. Results show that water droplet tended to a self-propelled motion on the super hydrophobic surface while it tended to elongate and break up on the RTV surface. The micro/nano hierarchical surface structure and chemical components with low surface free energy of the super hydrophobic surface jointly contributed to the reduction of skin fraction drag and subsequently made it possible for the motion of water droplet driven by electric field. Furthermore, the self-propelled motion of water droplets could also sweep away contaminations along its moving trace, which provides super hydrophobic surface a promising anti-pollution prospect in power systems.

Microwave spectroscopic observation of multiple phase transitions in the bilayer electron solid in wide quantum wells

NASA Astrophysics Data System (ADS)

Hatke, Anthony; Engel, Lloyd; Liu, Yang; Shayegan, Mansour; Pfeiffer, Loren; West, Ken; Baldwin, Kirk

2015-03-01

The termination of the low Landau filling factor (ν) fractional quantum Hall series for a single layer two dimensional system results in the formation of a pinned Wigner solid for ν < 1 / 5. In a wide quantum well the system can support a bilayer state in which interlayer and intralayer interactions become comparable, which is measured in traditional transport as an insulating state for ν < 1 / 2. We perform microwave spectroscopic studies of this bilayer state and observe that this insulator exhibits a resonance, a signature of a solid phase. Additionally, we find that as we increase the density of the well at fixed ν this bilayer solid exhibits multiple sharp reductions in the resonance amplitude vs ν. This behavior is characteristic of multiple phase transitions, which remain hidden from dc transport measurements.

Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms

PubMed Central

Nobukane, Hiroyoshi; Matsuyama, Toyoki; Tanda, Satoshi

2017-01-01

The quantum anomaly that breaks the symmetry, for example the parity and the chirality, in the quantization leads to a physical quantity with a topological Chern invariant. We report the observation of a Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms by employing electric transport. We observed the superconductor-to-insulator transition by reducing the thickness of Sr2RuO4 single crystals. The appearance of a gap structure in the insulating phase implies local superconductivity. Fractional quantized conductance was observed without an external magnetic field. We found an anomalous induced voltage with temperature and thickness dependence, and the induced voltage exhibited switching behavior when we applied a magnetic field. We suggest that there was fractional magnetic-field-induced electric polarization in the interlayer. These anomalous results are related to topological invariance. The fractional axion angle Θ = π/6 was determined by observing the topological magneto-electric effect in the Bose-insulating phase of Sr2RuO4 nanofilms. PMID:28112269

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

NASA Astrophysics Data System (ADS)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Dielectric properties of highly resistive GaN crystals grown by ammonothermal method at microwave frequencies

NASA Astrophysics Data System (ADS)

Krupka, Jerzy; Zajåc, Marcin; Kucharski, Robert; Gryglewski, Daniel

2016-03-01

Permittivity, the dielectric loss tangent and conductivity of semi-insulating Gallium Nitride crystals have been measured as functions of frequency from 10 GHz to 50 GHz and temperature from 295 to 560 K employing quasi TE0np mode dielectric resonator technique. Crystals were grown using ammonothermal method. Two kinds of doping were used to obtain high resistivity crystals; one with deep acceptors in form of transition metal ions, and the other with shallow Mg acceptors. The sample compensated with transition metal ions exhibited semi-insulating behavior in the whole temperature range. The sample doped with Mg acceptors remained semi-insulating up to 390 K. At temperatures exceeding 390 K the conductivity term in the total dielectric loss tangent of Mg compensated sample becomes dominant and it increases exponentially with activation energy of 1.14 eV. It has been proved that ammonothermal method with appropriate doping allows growth of high quality, temperature stable semi-insulating GaN crystals.

Dielectric and diamagnetic susceptibilities near percolative superconductor-insulator transitions.

PubMed

Loh, Yen Lee; Karki, Pragalv

2017-10-25

Coarse-grained superconductor-insulator composites exhibit a superconductor-insulator transition governed by classical percolation, which should be describable by networks of inductors and capacitors. We study several classes of random inductor-capacitor networks on square lattices. We present a unifying framework for defining electric and magnetic response functions, and we extend the Frank-Lobb bond-propagation algorithm to compute these quantities by network reduction. We confirm that the superfluid stiffness scales approximately as [Formula: see text] as the superconducting bond fraction p approaches the percolation threshold p c . We find that the diamagnetic susceptibility scales as [Formula: see text] below percolation, and as [Formula: see text] above percolation. For models lacking self-capacitances, the electric susceptibility scales as [Formula: see text]. Including a self-capacitance on each node changes the critical behavior to approximately [Formula: see text].

Electronic evidence of an insulator-superconductor crossover in single-layer FeSe/SrTiO3 films.

PubMed

He, Junfeng; Liu, Xu; Zhang, Wenhao; Zhao, Lin; Liu, Defa; He, Shaolong; Mou, Daixiang; Li, Fangsen; Tang, Chenjia; Li, Zhi; Wang, Lili; Peng, Yingying; Liu, Yan; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X J

2014-12-30

In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic bad metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. No evidence of doping-induced insulator-superconductor transition (or crossover) has been reported in the iron-based compounds so far. Here, we report an electronic evidence of an insulator-superconductor crossover observed in the single-layer FeSe film grown on a SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with increasing carrier concentration. In particular, the insulator-superconductor crossover in FeSe/SrTiO3 film exhibits similar behaviors to that observed in the cuprate superconductors. Our results suggest that the observed insulator-superconductor crossover may be associated with the two-dimensionality that enhances electron localization or correlation. The reduced dimensionality and the interfacial effect provide a new pathway in searching for new phenomena and novel superconductors with a high transition temperature.

Ferromagnetic behavior in mixed valence europium (Eu2+/Eu3+) oxide EuTi1-xMxO3 (M = Al3+ and Ga3+)

NASA Astrophysics Data System (ADS)

Akahoshi, Daisuke; Horie, Hiroki; Sakai, Shingo; Saito, Toshiaki

2013-10-01

We have investigated the Ti-site substitution effect on the magnetic properties of antiferromagnetic insulator EuTiO3 with a Néel temperature of ˜5 K. Partial substitution of Ti4+ with heterovalent Al3+ or Ga3+ turns the corresponding amount of magnetic Eu2+ into non-magnetic Eu3+. Both EuTi1-xAlxO3 (0.05 ≤ x ≤ 0.10) and EuTi1-xGaxO3 (0.05 ≤ x ≤ 0.10) exhibit ferromagnetic (FM) insulating behavior below ˜4 K. The Eu2+/Eu3+ mixed valence state probably contributes to the emergence of the FM behavior. Fine control of the magneto-electric (ME) phases of EuTi1-xAlxO3 and EuTi1-xGaxO3 would lead to intriguing ME phenomena such as giant ME effect.

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

PubMed

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Electronic Transport Behaviors due to Charge Density Waves in Ni-Nb-Zr-H Glassy Alloys

NASA Astrophysics Data System (ADS)

Fukuhara, Mikio; Umemori, Yoshimasa

2013-11-01

The amorphous Ni-Nb-Zr-H glassy alloy containing subnanometer-sized icosahedral Zr5 Nb5Ni3 clusters exhibited four types of electronic phenomena: a metal/insulator transition, an electric current-induced voltage oscillation (Coulomb oscillation), giant capacitor behavior and an electron avalanche with superior resistivity. These findings could be excluded by charge density waves that the low-dimensional component of clusters, in which the atoms are lined up in chains along the [130] direction, plays important roles in various electron transport phenomena.

Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

Use of Several Thermal Analysis Techniques to Study the Cracking of an Nitrile Butadiene Rubber (NBR) Insulator on the Booster Separation Motor (BSM) of the Space Shuttle

NASA Technical Reports Server (NTRS)

Wingard, Charles D.; Whitaker, Ann F. (Technical Monitor)

2000-01-01

Two different vendor rubber formulations have been used to produce the silica-filled NBR insulators for the BSM used on both of the Solid Rocket Boosters (SRBs) of the Space Shuttle. A number of lots of the BSM insulator in 1998-99 exhibited surface cracks and/or crazing. Each insulator is bonded to the BSM aluminum aft closure with an epoxy adhesive. Induced insulator stresses from adhesive cure are likely greatest where the insulator/adhesive contour is the greatest, thus showing increased insulator surface cracking in this area. Thermal analysis testing by Dynamic Mechanical Analyzer (DMA) and Thermomechanical Analysis (TMA) was performed on one each of the two vendor BSM insulators previously bonded that exhibited the surface cracking. The TMA data from the film/fiber technique yielded the most meaningful results, with thin insulator surface samples containing cracks having roughly the same modulus (stiffness) as thin insulator bulk samples just underneath.

Observation of the Quantum Anomalous Hall Insulator to Anderson Insulator Quantum Phase Transition and its Scaling Behavior.

PubMed

Chang, Cui-Zu; Zhao, Weiwei; Li, Jian; Jain, J K; Liu, Chaoxing; Moodera, Jagadeesh S; Chan, Moses H W

2016-09-16

Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in the quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quantum phase transition. We expect that our work will motivate much further investigation of many properties of quantum phase transition in this new context.

Phase diagram and neutron spin resonance of superconducting NaFe 1 - x Cu x As

DOE PAGES

Tan, Guotai; Song, Yu; Zhang, Rui; ...

2017-02-03

In this paper, we use transport and neutron scattering to study the electronic phase diagram and spin excitations of NaFe 1-xCu xAs single crystals. Similar to Co- and Ni-doped NaFeAs, a bulk superconducting phase appears near x≈2% with the suppression of stripe-type magnetic order in NaFeAs. Upon further increasing Cu concentration the system becomes insulating, culminating in an antiferromagnetically ordered insulating phase near x≈50%. Using transport measurements, we demonstrate that the resistivity in NaFe 1-xCu xAs exhibits non-Fermi-liquid behavior near x≈1.8%. Our inelastic neutron scattering experiments reveal a single neutron spin resonance mode exhibiting weak dispersion along c axis inmore » NaFe 0.98Cu 0.02As. The resonance is high in energy relative to the superconducting transition temperature T c but weak in intensity, likely resulting from impurity effects. These results are similar to other iron pnictides superconductors despite that the superconducting phase in NaFe 1-xCu xAs is continuously connected to an antiferromagnetically ordered insulating phase near x≈50% with significant electronic correlations. Finally, therefore, electron correlations is an important ingredient of superconductivity in NaFe 1-xCu xAs and other iron pnictides.« less

Ultracold fermions in a one-dimensional bipartite optical lattice: Metal-insulator transitions driven by shaking

NASA Astrophysics Data System (ADS)

Di Liberto, M.; Malpetti, D.; Japaridze, G. I.; Morais Smith, C.

2014-08-01

We theoretically investigate the behavior of a system of fermionic atoms loaded in a bipartite one-dimensional optical lattice that is under the action of an external time-periodic driving force. By using Floquet theory, an effective model is derived. The bare hopping coefficients are renormalized by zeroth-order Bessel functions of the first kind with different arguments for the nearest-neighbor and next-nearest-neighbor hopping. The insulating behavior characterizing the system at half filling in the absence of driving is dynamically suppressed, and for particular values of the driving parameter the system becomes either a standard metal or an unconventional metal with four Fermi points. The existence of the four-Fermi-point metal relies on the fact that, as a consequence of the shaking procedure, the next-nearest-neighbor hopping coefficients become significant compared to the nearest-neighbor ones. We use the bosonization technique to investigate the effect of on-site Hubbard interactions on the four-Fermi-point metal-insulator phase transition. Attractive interactions are expected to enlarge the regime of parameters where the unconventional metallic phase arises, whereas repulsive interactions reduce it. This metallic phase is known to be a Luther-Emery liquid (spin-gapped metal) for both repulsive and attractive interactions, contrary to the usual Hubbard model, which exhibits a Mott-insulator phase for repulsive interactions. Ultracold fermions in driven one-dimensional bipartite optical lattices provide an interesting platform for the realization of this long-studied four-Fermi-point unconventional metal.

High reliability sheathed, beryllia insulated, tungsten-rhenium alloy thermocouple assemblies; their fabrication and EMF stability

NASA Technical Reports Server (NTRS)

Burns, G. W.; Hurst, W. S.; Scroger, M. G.

1974-01-01

Tantalum sheathed, BeO insulated, W-3% Re/W-25% Re thermocouple assemblies were fabricated and their emf drift determined during 2059 hours of exposure at 2073 K in a gaseous helium environment. The sheathed thermocouple assemblies were constructed from aged thermoelements, specially heat-treated BeO insulators, and specially cleaned and etched tantalum sheaths. Their thermal emf drifts ranged from the equivalent of only -0.3 to -0.8 K drift per 1000 hours of exposure at 2073 K. No evidence of any gross chemical attack or degradation of the component materials was found. The emf drift and material behavior of some unsheathed, BeO insulated, W-3% Re/W-25% Re thermocouples at 2250 and 2400 K were also determined. Unsheathed thermocouples tested in an argon environment at 2250 K for 1100 hours and at 2400 K for 307 hours exhibited changes in thermal emf that typically ranged from the equivalent of a few degrees K to as much as +11 K. Post-test examinations of these thermocouples revealed some undesirable material degradation and interaction which included erosion of the BeO insulators and contamination of the thermoelements by tantalum from the tantalum blackbody enclosure in which the thermocouples were contained.

Thickness-dependent resistance switching in Cr-doped SrTiO3

NASA Astrophysics Data System (ADS)

Kim, TaeKwang; Du, Hyewon; Kim, Minchang; Seo, Sunae; Hwang, Inrok; Kim, Yeonsoo; Jeon, Jihoon; Lee, Sangik; Park, Baeho

2012-09-01

The thickness-dependent bipolar resistance-switching behavior was investigated for epitaxiallygrown Cr-doped SrTiO3 (Cr-STO). All the pristine devices of different thickness showed polarity-independent symmetric current-voltage characteristic and the same space-charge-limited conduction mechanism. However, after a forming process, the resultant conduction and switching phenomena were significantly different depending on the thickness of Cr-STO. The forming process itself was highly influenced by resistance value of each pristine device. Based on our results, we suggest that the resistance-switching mechanism in Cr-STO depends not only on the insulating material's composition or the contact metal as previously reported but also on the initial resistance level determined by the geometry and the quality of the insulating material. The bipolar resistance-switching behaviors in oxide materials of different thicknesses exhibit mixed bulk and interface switching. This indicates that efforts in resistance-based memory research should be focused on scalability or process method to control a given oxide material in addition to material type and device structure.

Composite Behavior of Insulated Concrete Sandwich Wall Panels Subjected to Wind Pressure and Suction.

PubMed

Choi, Insub; Kim, JunHee; Kim, Ho-Ryong

2015-03-19

A full-scale experimental test was conducted to analyze the composite behavior of insulated concrete sandwich wall panels (ICSWPs) subjected to wind pressure and suction. The experimental program was composed of three groups of ICSWP specimens, each with a different type of insulation and number of glass-fiber-reinforced polymer (GFRP) shear grids. The degree of composite action of each specimen was analyzed according to the load direction, type of the insulation, and number of GFRP shear grids by comparing the theoretical and experimental values. The failure modes of the ICSWPs were compared to investigate the effect of bonds according to the load direction and type of insulation. Bonds based on insulation absorptiveness were effective to result in the composite behavior of ICSWP under positive loading tests only, while bonds based on insulation surface roughness were effective under both positive and negative loading tests. Therefore, the composite behavior based on surface roughness can be applied to the calculation of the design strength of ICSWPs with continuous GFRP shear connectors.

Neutron diffraction, specific heat and magnetization studies on Nd{sub 2}CuTiO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rayaprol, S., E-mail: sudhindra@csr.res.in; Kaushik, S. D.; Kumar, Naresh

2016-05-23

Structural and physical properties of a double-perovskite compound, Nd{sub 2}CuTiO{sub 6} have been studied using neutron diffraction, magnetization and specific heat measurements. The compound crystallizes in an orthorhombic structure in space group Pnma. The interesting observation we make here is that, though no long range magnetic order is observed between 2 and 300 K, the low temperature specific heat and magnetic susceptibility behavior exhibits non-Fermi liquid like behavior in this insulating compound. The magnetization and specific heat data are presented and discussed in light of these observations.

Magnetic and metal-insulator transitions in coupled spin-fermion systems

DOE PAGES

Mondaini, R.; Paiva, T.; Scalettar, R. T.

2014-10-14

We use quantum Monte Carlo to determine the magnetic and transport properties of coupled square lattice spin and fermionic planes as a model for a metal-insulator interface. Specifically, layers of Ising spins with an intra-layer exchange constant J interact with the electronic spins of several adjoining metallic sheets via a coupling JH. When the chemical potential cuts across the band center, that is, at half-filling, the Neel temperature of antiferromagnetic (J > 0) Ising spins is enhanced by the coupling to the metal, while in the ferromagnetic case (J < 0) the metallic degrees of freedom reduce the ordering temperature.more » In the former case, a gap opens in the fermionic spectrum, driving insulating behavior, and the electron spins also order. This induced antiferromagnetism penetrates more weakly as the distance from the interface increases, and also exhibits a non-monotonic dependence on JH. For doped lattices an interesting charge disproportionation occurs where electrons move to the interface layer to maintain half-filling there.« less

Sn-doped Bi1.1Sb0.9Te2S: An ideal bulk topological insulator

NASA Astrophysics Data System (ADS)

Kushwaha, Sk; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, Sh; Tian, Y.; Zhao, H.; Burch, Ks; Lin, J.; Wang, W.; Ji, H.; Fedorov, Av; Yazdani, A.; Ong, Np; Valla, T.; Cava, Rj

In the recent decade the topological insulators have been of significant importance for the condensed matter community. However, so far no real materials could fulfill all the requirements. Here, we present the Bridgman growth of slightly Sn-doped Bi1.1Sb0.9Te2S (with bulk band gap of 350) single crystals and characterization by electronic transport, STM and ARPES. The results on the crystals exhibit an intrinsic semiconducting behavior with the Fermi level and Dirac energies lie in bulk gap and high quality 2D surface states are detangled from the bulk states, and it fulfils all the requirements to be an ideal topological insulator. ARO MURI W911NF-12-1-0461; ARO W911NF-12-1-0461; MRSEC NSF-DMR-1420541; LBNL & BNL DE-AC02-05CH11231 & DE-SC0012704; DOE Office of Science DE-AC02-06CH11357; NSF DMR-1410846.

Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb) 2 (Se,Te) 3

DOE PAGES

Jeffries, J. R.; Butch, N. P.; Vohra, Y. K.; ...

2015-03-18

The group V-VI compounds|like Bi 2Se 3, Sb 2Te 3, or Bi 2Te 3|have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb) 2(Te,Se) 3 compound. Similar to some ofmore » its sister compounds, the (Bi,Sb) 2(Te,Se) 3 pseudobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.« less

Dielectric and diamagnetic susceptibilities near percolative superconductor-insulator transitions

NASA Astrophysics Data System (ADS)

Loh, Yen Lee; Karki, Pragalv

2017-10-01

Coarse-grained superconductor-insulator composites exhibit a superconductor-insulator transition governed by classical percolation, which should be describable by networks of inductors and capacitors. We study several classes of random inductor-capacitor networks on square lattices. We present a unifying framework for defining electric and magnetic response functions, and we extend the Frank-Lobb bond-propagation algorithm to compute these quantities by network reduction. We confirm that the superfluid stiffness scales approximately as ( p-p_c){\\hspace{0pt}}1.3 as the superconducting bond fraction p approaches the percolation threshold p c . We find that the diamagnetic susceptibility scales as ( p_c-p){\\hspace{0pt}}-1.3 below percolation, and as L2 ( p-p_c){\\hspace{0pt}}1.3 above percolation. For models lacking self-capacitances, the electric susceptibility scales as ( p_c-p){\\hspace{0pt}}-1.3 . Including a self-capacitance on each node changes the critical behavior to approximately ( p_c-p){\\hspace{0pt}}-2.52 .

Quasistatic antiferromagnetism in the quantum wells of SmTiO3/SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Need, Ryan F.; Marshall, Patrick B.; Kenney, Eric; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Kirby, Brian J.; Stemmer, Susanne; Graf, Michael J.; Wilson, Stephen D.

2018-03-01

High carrier density quantum wells embedded within a Mott insulating matrix present a rich arena for exploring unconventional electronic phase behavior ranging from non-Fermi-liquid transport and signatures of quantum criticality to pseudogap formation. Probing the proposed connection between unconventional magnetotransport and incipient electronic order within these quantum wells has however remained an enduring challenge due to the ultra-thin layer thicknesses required. Here we address this challenge by exploring the magnetic properties of high-density SrTiO3 quantum wells embedded within the antiferromagnetic Mott insulator SmTiO3 via muon spin relaxation and polarized neutron reflectometry measurements. The one electron per planar unit cell acquired by the nominal d0 band insulator SrTiO3 when embedded within a d1 Mott SmTiO3 matrix exhibits slow magnetic fluctuations that begin to freeze into a quasistatic spin state below a critical temperature T*. The appearance of this quasistatic well magnetism coincides with the previously reported opening of a pseudogap in the tunneling spectra of high carrier density wells inside this film architecture. Our data suggest a common origin of the pseudogap phase behavior in this quantum critical oxide heterostructure with those observed in bulk Mott materials close to an antiferromagnetic instability.

Electron–hole asymmetry of the topological surface states in strained HgTe

PubMed Central

Jost, Andreas; Bendias, Michel; Böttcher, Jan; Hankiewicz, Ewelina; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens W.; Maan, Jan C.; Zeitler, Uli; Hussey, Nigel; Wiedmann, Steffen

2017-01-01

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron–hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected. PMID:28280101

Feasibility study on partial insulation winding technique for the development of self-protective MgB2 magnet

NASA Astrophysics Data System (ADS)

Kim, Y. G.; Kim, J. C.; Kim, J. M.; Yoo, B. H.; Hwang, D. Y.; Lee, H. G.

2018-06-01

This study investigates the feasibility of using the partial insulation winding technique for the development of a self-protective MgB2 MRI magnet with a fast charge-discharge rate. Charge-discharge and quench tests for a prototype PI MgB2 magnet confirmed that the magnet was successfully operated at full-field performance and exhibited self-protecting behavior in the event of a quench. Nonetheless, the required time to charge the 0.5-T/300-mm PI MgB2 magnet was almost five days, implying that the charge-discharge delay of the PI MgB2 magnet still needs to be ameliorated further to develop a real-scale MgB2 MRI magnet with a fast charge-discharge rate.

Composite Behavior of Insulated Concrete Sandwich Wall Panels Subjected to Wind Pressure and Suction

PubMed Central

Choi, Insub; Kim, JunHee; Kim, Ho-Ryong

2015-01-01

A full-scale experimental test was conducted to analyze the composite behavior of insulated concrete sandwich wall panels (ICSWPs) subjected to wind pressure and suction. The experimental program was composed of three groups of ICSWP specimens, each with a different type of insulation and number of glass-fiber-reinforced polymer (GFRP) shear grids. The degree of composite action of each specimen was analyzed according to the load direction, type of the insulation, and number of GFRP shear grids by comparing the theoretical and experimental values. The failure modes of the ICSWPs were compared to investigate the effect of bonds according to the load direction and type of insulation. Bonds based on insulation absorptiveness were effective to result in the composite behavior of ICSWP under positive loading tests only, while bonds based on insulation surface roughness were effective under both positive and negative loading tests. Therefore, the composite behavior based on surface roughness can be applied to the calculation of the design strength of ICSWPs with continuous GFRP shear connectors. PMID:28788001

Localization and superconductivity in (BEDT-TIF) 2Cu[N(CN) 2]Cl: Pressure effect

NASA Astrophysics Data System (ADS)

Sushko, Yu. V.; Bondarenko, V. A.; Petrosov, R. A.; Kushch, N. D.; Yagubskii, E. B.

1991-12-01

At ambient pressure titled salt exhibits the insulating ground state. Superconductivity with T c near 12 K appears at the pressure of 95 bar and under the moderate pressures coexists with the high-temperature semiconducting regime. At 340 bar the metallic behavior of resistance is stabilized in whole temperature range and T c reaches the maximum value (midpoint 12.8 K, onset 13.8 K). Further pressure increasing causes rapid T c decreasing.

Fabrication of Cellulose Nanofiber/AlOOH Aerogel for Flame Retardant and Thermal Insulation

PubMed Central

Fan, Bitao; Chen, Shujun; Yao, Qiufang; Sun, Qingfeng; Jin, Chunde

2017-01-01

Cellulose nanofiber/AlOOH aerogel for flame retardant and thermal insulation was successfully prepared through a hydrothermal method. Their flame retardant and thermal insulation properties were investigated. The morphology image of the cellulose nanofiber/AlOOH exhibited spherical AlOOH with an average diameter of 0.5 μm that was wrapped by cellulose nanofiber or adhered to them. Cellulose nanofiber/AlOOH composite aerogels exhibited excellent flame retardant and thermal insulation properties through the flammability test, which indicated that the as-prepared composite aerogels would have a promising future in the application of some important areas such as protection of lightweight construction materials. PMID:28772670

Nature of Continuous Phase Transitions in Interacting Topological Insulators

DOE PAGES

Zeng, Tian-sheng; Zhu, Wei; Zhu, Jianxin; ...

2017-11-08

Here, we revisit the effects of the Hubbard repulsion on quantum spin Hall effects (QSHE) in two-dimensional quantum lattice models. We present both unbiased exact diagonalization and density-matrix renormalization group simulations with numerical evidence for a continuous quantum phase transition (CQPT) separating QSHE from the topologically trivial antiferromagnetic phase. Our numerical results suggest that the nature of CQPT exhibits distinct finite-size scaling behaviors, which may be consistent with either Ising or XY universality classes for different time-reversal symmetric QSHE systems.

Nature of Continuous Phase Transitions in Interacting Topological Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Tian-sheng; Zhu, Wei; Zhu, Jianxin

Here, we revisit the effects of the Hubbard repulsion on quantum spin Hall effects (QSHE) in two-dimensional quantum lattice models. We present both unbiased exact diagonalization and density-matrix renormalization group simulations with numerical evidence for a continuous quantum phase transition (CQPT) separating QSHE from the topologically trivial antiferromagnetic phase. Our numerical results suggest that the nature of CQPT exhibits distinct finite-size scaling behaviors, which may be consistent with either Ising or XY universality classes for different time-reversal symmetric QSHE systems.

Spin-orbit coupling and transport in strongly correlated two-dimensional systems

NASA Astrophysics Data System (ADS)

Huang, Jian; Pfeiffer, L. N.; West, K. W.

2017-05-01

Measuring the magnetoresistance (MR) of ultraclean GaAs two-dimensional holes for a large rs range of 20-50, two striking behaviors in relation to the spin-orbit coupling (SOC) emerge in response to strong electron-electron interaction. First, in exact correspondence to the zero-field metal-to-insulator transition (MIT), the sign of the MR switches from being positive in the metallic regime to being negative in the insulating regime when the carrier density crosses the critical density pc of MIT (rs˜39 ). Second, as the SOC-driven correction Δ ρ to the MR decreases with reducing carrier density (or the in-plane wave vector), it exhibits an upturn in the close proximity just above pc where rs is beyond 30, indicating a substantially enhanced SOC effect. This peculiar behavior echoes with a trend of delocalization long suspected for the SOC-interaction interplay. Meanwhile, for p 40 , in contrast to the common belief that a magnet field enhances Wigner crystallization, the negative MR is likely linked to enhanced interaction.

Analysis of simultaneous thermal/gamma radiation aging of cross-linked polyethylene (XLPE) insulation—interim status report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fifield, Leonard S.; Correa, Miguel

Cross-linked polyethylene (XLPE) is the most common cable insulation found in nuclear containment, and is therefore a priority material for investigation of long term aging effect from elevated temperature combined with gamma radiation exposure. Prior work has identified the possibility of anomalous aging behavior in XLPE such as the inverse temperature effect in which radiation exposure is more damaging at lower temperatures than at higher temperatures. We explored simultaneous aging of XLPE insulation from modern Firewall® III nuclear cables at 60, 90, and 115 °C, at gamma dose rates from 116 to 540 Gy/h, for exposure periods up to 25more » d. XLPE samples exposed in this way were characterized using the percent gel and uptake factor method. For the conditions and material examine, degradation behavior was seen to track proportionally with increasing temperature, rather than to exhibit greater degradation at lower temperatures. Ongoing work including similar aging at 25 °C and characterization of the XLPE samples using other methods will further elucidate these initial results« less

Unusual Mott transition in multiferroic PbCrO 3

DOE PAGES

Wang, Shanmin; Zhu, Jinlong; Zhang, Yi; ...

2015-11-24

The Mott insulator in correlated electron systems arises from classical Coulomb repulsion between carriers to provide a powerful force for electron localization. When turning such an insulator into a metal, the so-called Mott transition, is commonly achieved by "bandwidth" control or "band filling." However, both mechanisms deviate from the original concept of Mott, which attributes such a transition to the screening of Coulomb potential and associated lattice contraction. We report a pressure-induced isostructural Mott transition in cubic perovskite PbCrO3. At the transition pressure of similar to 3 GPa, PbCrO3 exhibits significant collapse in both lattice volume and Coulomb potential. Concurrentmore » with the collapse, it transforms from a hybrid multiferroic insulator to a metal. For the first time to our knowledge, these findings validate the scenario conceived by Mott. Close to the Mott criticality at similar to 300 K, fluctuations of the lattice and charge give rise to elastic anomalies and Laudau critical behaviors resembling the classic liquid-gas transition. Moreover, the anomalously large lattice volume and Coulomb potential in the low-pressure insulating phase are largely associated with the ferroelectric distortion, which is substantially suppressed at high pressures, leading to the first-order phase transition without symmetry breaking.« less

Two-Dimensional Jeff=1 /2 Antiferromagnetic Insulator Unraveled from Interlayer Exchange Coupling in Artificial Perovskite Iridate Superlattices

NASA Astrophysics Data System (ADS)

Hao, Lin; Meyers, D.; Frederick, Clayton; Fabbris, Gilberto; Yang, Junyi; Traynor, Nathan; Horak, Lukas; Kriegner, Dominik; Choi, Yongseong; Kim, Jong-Woo; Haskel, Daniel; Ryan, Phil J.; Dean, M. P. M.; Liu, Jian

2017-07-01

We report an experimental investigation of the two-dimensional Jeff=1 /2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO3)1 , (SrTiO3)m ] (m =1 , 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating behavior in the m =2 and m =3 samples than the m =1 sample which displayed a clear kink at the magnetic transition. This difference indicates that the blocking effect of the excessive SrTiO3 layer enhances the effective electron-electron correlation and strengthens the Mott phase. The significant reduction of the Néel temperature from 150 K for m =1 to 40 K for m =2 demonstrates that the long-range order stability in the former is boosted by a substantial interlayer exchange coupling. Resonant x-ray magnetic scattering revealed that the interlayer exchange coupling has a switchable sign, depending on the SrTiO3 layer number m , for maintaining canting-induced weak ferromagnetism. The nearly unaltered transition temperature between the m =2 and the m =3 demonstrated that we have realized a two-dimensional antiferromagnet at finite temperatures with diminishing interlayer exchange coupling.

Unusual Mott transition in multiferroic PbCrO3

PubMed Central

Wang, Shanmin; Zhu, Jinlong; Zhang, Yi; Yu, Xiaohui; Zhang, Jianzhong; Wang, Wendan; Bai, Ligang; Qian, Jiang; Yin, Liang; Sullivan, Neil S.; Jin, Changqing; He, Duanwei; Xu, Jian; Zhao, Yusheng

2015-01-01

The Mott insulator in correlated electron systems arises from classical Coulomb repulsion between carriers to provide a powerful force for electron localization. Turning such an insulator into a metal, the so-called Mott transition, is commonly achieved by “bandwidth” control or “band filling.” However, both mechanisms deviate from the original concept of Mott, which attributes such a transition to the screening of Coulomb potential and associated lattice contraction. Here, we report a pressure-induced isostructural Mott transition in cubic perovskite PbCrO3. At the transition pressure of ∼3 GPa, PbCrO3 exhibits significant collapse in both lattice volume and Coulomb potential. Concurrent with the collapse, it transforms from a hybrid multiferroic insulator to a metal. For the first time to our knowledge, these findings validate the scenario conceived by Mott. Close to the Mott criticality at ∼300 K, fluctuations of the lattice and charge give rise to elastic anomalies and Laudau critical behaviors resembling the classic liquid–gas transition. The anomalously large lattice volume and Coulomb potential in the low-pressure insulating phase are largely associated with the ferroelectric distortion, which is substantially suppressed at high pressures, leading to the first-order phase transition without symmetry breaking. PMID:26604314

Optical Manipulation and Detection of Emergent Phenomena in Topological Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gedik, Nuh

The three-dimensional topological insulator (TI) is a new quantum phase of matter that exhibits quantum-Hall-like properties, even in the absence of an external magnetic field. These materials are insulators in the bulk but have a topologically protected conducting state at the surface. Charge carriers on these surface states behave like a two-dimensional gas of massless helical Dirac fermions for which the spin is ideally locked perpendicular to the momentum. The purpose of this project is to probe the unique collective electronic behaviors of topological insulators by developing and using advanced time resolved spectroscopic techniques with state-of-the-art temporal and spatial resolutions.more » The nature of these materials requires development of specialized ultrafast techniques (such as time resolved ARPES that also has spin detection capability, ultrafast electron diffraction that has sub-100 fs time resolution and THz magneto-spectroscopy). The focus of this report is to detail our achievements in terms of establishing state of the art experimental facilities. Below, we will describe achievements under this award for the entire duration of five years. We will focus on detailing the development of ultrafast technqiues here. The details of the science that was done with these technqiues can be found in the publications referencing this grant.« less

Metal-Insulator Transitions in Epitaxial LaVO(3) and LaTiO(3) Films

DTIC Science & Technology

2012-08-01

epitaxial films of LaVO3 and LaTiO3 can exhibit metallicity though their bulk counterparts are Mott insulators. When LaTiO3 films are compressively...secondarily to interface electronic reconstruction at the LaTiO3 /SrTiO3 interface. However, when LaVO3 films are compressively strained on SrTiO3...ABSTRACT We have demonstrated that epitaxial films of LaVO3 and LaTiO3 can exhibit metallicity though their bulk counterparts are Mott insulators. When

Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films

PubMed Central

Mikheev, Evgeny; Hauser, Adam J.; Himmetoglu, Burak; Moreno, Nelson E.; Janotti, Anderson; Van de Walle, Chris G.; Stemmer, Susanne

2015-01-01

Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. We establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of Ni eg orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to a non-Fermi liquid metal phase and provide a predictive criterion for Anderson localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices. PMID:26601140

Unsteady Stored Heat Behavior in Building Frame of Reinforced Concrete Structure Type Cold Storage

NASA Astrophysics Data System (ADS)

Nomura, Tomohiro; Murakami, Yuji; Uchikawa, Motoyuki

The time variation of temperature in the reinforced concrete frame with an internal insulation or with an external insulation and the unsteady stored heat behavior, which results from the thermal mass of the concrete frame, have been investigated. The experiments with the concrete models and the measurements of the heat flux through the practical cold storage were performed. The experimental results under the unsteady condition showed great difference of the stored heat behavior between the internal insulation type and the external type. In addition, it was shown that the external insulation frame was useful for heat storage. The simulation method with two dimentional unsteady FEM was introduced for easily analyzing the stored heat behavior problems of the practical cold storages, which had various specifications in design. The calculated results of the heat flux and temperature in the concrete frame agreed with the experiments approximately. From these results, the suggestions for the design of the insulation wall under the unsteady condition were given.

Direct observation of surface-state thermal oscillations in SmB6 oscillators

NASA Astrophysics Data System (ADS)

Casas, Brian; Stern, Alex; Efimkin, Dmitry K.; Fisk, Zachary; Xia, Jing

2018-01-01

SmB6 is a mixed valence Kondo insulator that exhibits a sharp increase in resistance following an activated behavior that levels off and saturates below 4 K. This behavior can be explained by the proposal of SmB6 representing a new state of matter, a topological Kondo insulator, in which a Kondo gap is developed, and topologically protected surface conduction dominates low-temperature transport. Exploiting its nonlinear dynamics, a tunable SmB6 oscillator device was recently demonstrated, where a small dc current generates large oscillating voltages at frequencies from a few Hz to hundreds of MHz. This behavior was explained by a theoretical model describing the thermal and electronic dynamics of coupled surface and bulk states. However, a crucial aspect of this model, the predicted temperature oscillation in the surface state, has not been experimentally observed to date. This is largely due to the technical difficulty of detecting an oscillating temperature of the very thin surface state. Here we report direct measurements of the time-dependent surface-state temperature in SmB6 with a RuO2 microthermometer. Our results agree quantitatively with the theoretically simulated temperature waveform, and hence support the validity of the oscillator model, which will provide accurate theoretical guidance for developing future SmB6 oscillators at higher frequencies.

Gate- and Light-Tunable pn Heterojunction Microwire Arrays Fabricated via Evaporative Assembly.

PubMed

Park, Jae Hoon; Kim, Jong Su; Choi, Young Jin; Lee, Wi Hyoung; Lee, Dong Yun; Cho, Jeong Ho

2017-02-01

One-dimensional (1D) nano/microwires have attracted considerable attention as versatile building blocks for use in diverse electronic, optoelectronic, and magnetic device applications. The large-area assembly of nano/microwires at desired positions presents a significant challenge for developing high-density electronic devices. Here, we demonstrated the fabrication of cross-stacked pn heterojunction diode arrays by integrating well-aligned inorganic and organic microwires fabricated via evaporative assembly. We utilized solution-processed n-type inorganic indium-gallium-zinc-oxide (IGZO) microwires and p-type organic 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) microwires. The formation of organic TIPS-PEN semiconductor microwire and their electrical properties were optimized by controlling both the amounts of added insulating polymer and the widths of the microwires. The resulting cross-stacked IGZO/TIPS-PEN microwire pn heterojunction devices exhibited rectifying behavior with a forward-to-reverse bias current ratio exceeding 10 2 . The ultrathin nature of the underlying n-type IGZO microwires yielded gate tunability in the charge transport behaviors, ranging from insulating to rectifying. The rectifying behaviors of the heterojunction devices could be modulated by controlling the optical power of the irradiated light. The fabrication of semiconducting microwires through evaporative assembly provides a facile and reliable approach to patterning or positioning 1D microwires for the fabrication of future flexible large-area electronics.

Vanadium dioxide-based materials for potential thermal switching applications

NASA Astrophysics Data System (ADS)

Jeong, Minyoung

One of the materials able to exhibit a transition from insulators to metals (IMT materials) is vanadium dioxide (VO2). Through IMT, VO2 shows a drop of resistivity of five orders of magnitude at a picosecond timescale. In this work, the feasibility of using VO2 as an efficient thermal switching device is discussed. Several synthesis methods (sol-gel, hot press and spark plasma sintering) were attempted to obtain VO2 sample in pellet form. From the X-ray diffraction results, it was found that spark plasma sintering (SPS) yielded the highest phase purity. Several sintering parameters such as temperature or sintering time were tested to determine the optimal sintering conditions. For better thermal switching behavior, high-energy ball milling was used to reduce lattice thermal conductivity (klat.) in the insulator phase. Ball-milling time was varied from 30 minutes to 2 hours. It was found that with increasing milling time, the k lat. was reduced. Thus, it was demonstrated that thermal switching behavior was most efficient with 2 hour-milling. To improve electronic thermal conductivity ( kelec.) in the metallic state, nano-sized copper particles were added to the VO2 system with a subtle amount variation ranging from 3at % to 5 at%. Results show that a composite with 5 at% Cu (copper) addition exhibited the largest increase in thermal conductivity ( k) in the metallic state. In addition to this, a basic mechanism behind IMT and some of the exemplary IMT-based applications were introduced.

Effect of gadolinium dopant on structural, magneto-transport, magnetic and thermo-power of Pr0.8Sr0.2MnO3

NASA Astrophysics Data System (ADS)

Poojary, Thrapthi; Babu, P. D.; Sanil, Tejaswini; Daivajna, Mamatha D.

2018-07-01

In the present investigation structural, magneto-transport, magnetic and thermo-power measurements of Gadolinium (Gd) doped Pr0.8-xGdxSr0.2MnO3 (0, 0.2, 0.25 and 0.3) manganites have been done. All the samples are single phased with orthorhombic structure. Temperature variation of resistance exhibits a high temperature transition occurring at 156 K and a low temperature cusp at around 95 K for pristine sample. With Gd doping resistance behavior shows insulating behavior throughout the whole temperature range. Magneto-Resistance (MR%) increases with Gd doping. A huge increase in thermo-electric power is observed with Gd doping.

Dielectric-Like Behavior of Graphene in Au Plasmon Resonator.

PubMed

Liu, Junku; Li, Qunqing; Chen, Mo; Ren, Mengxin; Zhang, Lihui; Xiao, Lin; Jiang, Kaili; Fan, Shoushan

2016-12-01

Graphene has proven to be a promising conductive layer in fabricating optical plasmon resonators on insulator substrate using electron beam lithography and has the potential to construct electrically controlled active plasmon resonators. In this study, we investigate the effect of graphene on plasmon resonance using graphene and Au plasmon resonator system as a model at visible and near-infrared wavelength. Our experiment data show that the presence of graphene does not weaken and annihilate the plasmon resonance peaks, instead it predominantly makes the peaks redshift, which is similar to the behavior of depositing SiO 2 film on Au plasmon resonators. This fact indicates that graphene predominantly exhibits dielectric-like behavior at visible and near-infrared wavelength, which can be attributed to the low carrier density in graphene compared with metals.

Physical processes in high field insulating liquid conduction

NASA Astrophysics Data System (ADS)

Mazarakis, Michael; Kiefer, Mark; Leckbee, Joshua; Anderson, Delmar; Wilkins, Frank; Obregon, Robert

2017-10-01

In the power grid transmission where a large amount of energy is transmitted to long distances, High Voltage DC (HVDC) transmission of up to 1MV becomes more attractive since is more efficient than the counterpart AC. However, two of the most difficult problems to solve are the cable connections to the high voltage power sources and their insulation from the ground. The insulating systems are usually composed of transformer oil and solid insulators. The oil behavior under HVDC is similar to that of a weak electrolyte. Its behavior under HVDC is dominated more by conductivity than dielectric constant. Space charge effects in the oil bulk near high voltage electrodes and impeded plastic insulators affect the voltage oil hold-off. We have constructed an experimental facility where we study the oil and plastic insulator behavior in an actual HVDC System. Experimental results will be presented and compared with the present understanding of the physics governing the oil behavior under very high electrical stresses. Sandia National Laboratories managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. D.O.E., NNSA under contract DE-NA-0003525.

Growth and characterization of high-purity SiC single crystals

NASA Astrophysics Data System (ADS)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.

PubMed

Saito, Yu; Iwasa, Yoshihiro

2015-03-24

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

2018-05-01

Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

Ballistic low-temperature magnon heat conduction in the helimagnetic insulator Cu2OSeO3

NASA Astrophysics Data System (ADS)

Prasai, Narayan; Akopyan, Artem; Huang, Sunxiang; Cohn, Joshua L.; Trump, Benjamin; Marcus, Guy G.; McQueen, Tyrel M.

We report on the observation of magnon thermal conductivities κm 80 W/mK near T = 5 K in single crystals of the helimagnetic insulator Cu2OSeO3, exceeding those observed previously in any other ferro- or ferrimagnet by almost two orders of magnitude. Distinguished in applied magnetic field, both magnon and phonon thermal conductivities exhibit ballistic behavior below 1K, with mean free paths limited by specimen boundaries. Changes in κm through the helical-conical and conical-collinear spin-phase transitions with increasing applied field will also be discussed. This material is based on work supported by the U.S. DOE, Off. of BES, Div. of Mater. Sci. and Eng., under Grants No. DEFG02-12ER46888 (Miami), DEFG02-08ER46544 (JHU), and the NSF, Div. of Mater. Res., Sol. St. Chem., CAREER Grant No. DMR-1253562 (JHU).

Oxygen octahedral distortions in LaMO 3/SrTiO 3 superlattices

DOE PAGES

Sanchez-Santolino, Gabriel; Cabero, Mariona; Varela, Maria; ...

2014-04-24

Here we study the interfaces between the Mott insulator LaMnO 3 (LMO) and the band insulator SrTiO 3 (STO) in epitaxially grown superlattices with different thickness ratios and different transport and magnetic behaviors. Using atomic resolution electron energy-loss spectrum imaging, we analyze simultaneously the structural and chemical properties of these interfaces. We find changes in the oxygen octahedral tilts within the LaMnO 3 layers when the thickness ratio between the manganite and the titanate layers is varied. Superlattices with thick LMO and ultrathin STO layers present unexpected octahedral tilts in the STO, along with a small amount of oxygen vacancies.more » On the other hand, thick STO layers exhibit undistorted octahedra while the LMO layers present reduced O octahedral distortions near the interfaces. In conclusion, these findings will be discussed in view of the transport and magnetic differences found in previous studies.« less

Polymer-Reinforced, Non-Brittle, Lightweight Cryogenic Insulation

NASA Technical Reports Server (NTRS)

Hess, David M.

2013-01-01

The primary application for cryogenic insulating foams will be fuel tank applications for fueling systems. It is crucial for this insulation to be incorporated into systems that survive vacuum and terrestrial environments. It is hypothesized that by forming an open-cell silica-reinforced polymer structure, the foam structures will exhibit the necessary strength to maintain shape. This will, in turn, maintain the insulating capabilities of the foam insulation. Besides mechanical stability in the form of crush resistance, it is important for these insulating materials to exhibit water penetration resistance. Hydrocarbon-terminated foam surfaces were implemented to impart hydrophobic functionality that apparently limits moisture penetration through the foam. During the freezing process, water accumulates on the surfaces of the foams. However, when hydrocarbon-terminated surfaces are present, water apparently beads and forms crystals, leading to less apparent accumulation. The object of this work is to develop inexpensive structural cryogenic insulation foam that has increased impact resistance for launch and ground-based cryogenic systems. Two parallel approaches will be pursued: a silica-polymer co-foaming technique and a post foam coating technique. Insulation characteristics, flexibility, and water uptake can be fine-tuned through the manipulation of the polyurethane foam scaffold. Silicate coatings for polyurethane foams and aerogel-impregnated polyurethane foams have been developed and tested. A highly porous aerogel-like material may be fabricated using a co-foam and coated foam techniques, and can insulate at liquid temperatures using the composite foam

Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

NASA Astrophysics Data System (ADS)

Dahal, Bishnu R.

The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics of relativistic Dirac fermions becomes relevant. This results in peculiar quantum oscillations in transport measurements which make it possible to unambiguously identify surface Dirac fermions. In order to lead us towards a better understanding of topological insulators and their applications, it is, however, necessary to develop techniques that will enable high quality materials to be obtained in a routine and reliable way. However, this has been an enormous challenge so far. Since highly volatile components are involved in most topological insulators, whether in bulk single crystal or epitaxial thin films or chemical vapor deposition grown nanoribbons, maintaining near stoichiometry has proven to be very difficult. Observing the predicted transport properties of these systems, particularly surface carriers of high mobility whilst maintaining bulk insulating states, is seriously impeded by the unintentional doping of bulk carriers. Moreover, in thin films and hetrostructures, at the all-important thickness range of a few nanometers, the additional limitation of the film-substrate lattice mismatch and the resulting strain in films is a major concern. In this thesis, we have developed a synthesis technique to obtain high quality SnTe nanoribbons, which is a topological crystalline insulator and its surface states are topologically protected by mirror symmetry of the lattice. The obtained ribbons are nearly stoichiometric and show strong semiconducting behavior with a bandgap of 240 meV. This is the first time high quality SnTe nanoribbons have been synthesized. High quality SnTe nanoribbons form a potential platform to understand the magnetic topological insulating behavior. In this thesis, it is also shown that magnetic behavior can be introduced in SnTe nanoribbons by means of chromium doping. Magnetically doped topological insulators, possessing an energy gap created at the Dirac point are predicted to exhibit exotic phenomena including the quantized anomalous Hall Effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. In addition, this thesis also discusses the growth and transport properties of another Te-based chalcogenide system, CoTe with ferrimagnetic and semiconducting behavior. We have shown that the structural, electrical and magnetic properties can be tuned by controlling the amount of cobalt in the system.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Origin of electrically heterogeneous microstructure in CuO from scanning tunneling spectroscopy study

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-04-01

We report electronic structure of the grains and grain boundaries (GBs) of the high permittivity (κ˜104) ceramic CuO from scanning tunneling spectroscopy (STS) studies. The p-type semiconducting character of the CuO grains and insulating behavior of the corresponding GBs, observed from STS studies, have been explained. This type of electrically inhomogeneous microstructure leads to the formation of barrier layer capacitance elements in CuO and, hence, provides an explanation of the colossal-κ response exhibited by CuO.

Fire behavior of transformer dielectric insulating fluids

DOT National Transportation Integrated Search

1980-01-31

This report presents results for the fire behavior of pure and askarel-contaminated fluids which are candidates for use as railroad transformer dielectric insulating fluids. In the study a hydrocarbon and a dimethyl-siloxane fluid were examined. The ...

Holographic insulator/superconductor transition with exponential nonlinear electrodynamics probed by entanglement entropy

NASA Astrophysics Data System (ADS)

Yao, Weiping; Yang, Chaohui; Jing, Jiliang

2018-05-01

From the viewpoint of holography, we study the behaviors of the entanglement entropy in insulator/superconductor transition with exponential nonlinear electrodynamics (ENE). We find that the entanglement entropy is a good probe to the properties of the holographic phase transition. Both in the half space and the belt space, the non-monotonic behavior of the entanglement entropy in superconducting phase versus the chemical potential is general in this model. Furthermore, the behavior of the entanglement entropy for the strip geometry shows that the confinement/deconfinement phase transition appears in both insulator and superconductor phases. And the critical width of the confinement/deconfinement phase transition depends on the chemical potential and the exponential coupling term. More interestingly, the behaviors of the entanglement entropy in their corresponding insulator phases are independent of the exponential coupling factor but depends on the width of the subsystem A.

Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

NASA Astrophysics Data System (ADS)

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

2018-05-01

We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

Two-Dimensional J eff = 1 / 2 Antiferromagnetic Insulator Unraveled from Interlayer Exchange Coupling in Artificial Perovskite Iridate Superlattices

DOE PAGES

Hao, Lin; Meyers, D.; Frederick, Clayton; ...

2017-07-14

We report an experimental investigation of the two-dimensional J eff=1/2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO 3) 1, (SrTiO 3) m] (m=1, 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating behavior in the m = 2 and m = 3 samples than the m = 1 sample which displayed a clear kink at the magnetic transition. This difference indicates that the blocking effect of the excessive SrTiO 3 layer enhances the effective electron-electron correlation and strengthens the Mott phase. Themore » significant reduction of the Néel temperature from 150 K for m = 1 to 40 K for m = 2 demonstrates that the long-range order stability in the former is boosted by a substantial interlayer exchange coupling. Resonant x-ray magnetic scattering revealed that the interlayer exchange coupling has a switchable sign, depending on the SrTiO 3 layer number m, for maintaining canting-induced weak ferromagnetism. In conclusion, the nearly unaltered transition temperature between the m = 2 and the m = 3 demonstrated that we have realized a two-dimensional antiferromagnet at finite temperatures with diminishing interlayer exchange coupling.« less

Two-Dimensional J eff = 1 / 2 Antiferromagnetic Insulator Unraveled from Interlayer Exchange Coupling in Artificial Perovskite Iridate Superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao, Lin; Meyers, D.; Frederick, Clayton

We report an experimental investigation of the two-dimensional J eff=1/2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO 3) 1, (SrTiO 3) m] (m=1, 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating behavior in the m = 2 and m = 3 samples than the m = 1 sample which displayed a clear kink at the magnetic transition. This difference indicates that the blocking effect of the excessive SrTiO 3 layer enhances the effective electron-electron correlation and strengthens the Mott phase. Themore » significant reduction of the Néel temperature from 150 K for m = 1 to 40 K for m = 2 demonstrates that the long-range order stability in the former is boosted by a substantial interlayer exchange coupling. Resonant x-ray magnetic scattering revealed that the interlayer exchange coupling has a switchable sign, depending on the SrTiO 3 layer number m, for maintaining canting-induced weak ferromagnetism. In conclusion, the nearly unaltered transition temperature between the m = 2 and the m = 3 demonstrated that we have realized a two-dimensional antiferromagnet at finite temperatures with diminishing interlayer exchange coupling.« less

Control of Nanofilament Structure and Observations of Quantum Point Contact Behavior in Ni/NiO Nanowire Junctions

NASA Astrophysics Data System (ADS)

Oliver, Sean; Fairfield, Jessamyn; Lee, Sunghun; Bellew, Allen; Stone, Iris; Ruppalt, Laura; Boland, John; Vora, Patrick

Resistive switching is ideal for use in non-volatile memory where information is stored in a metallic or insulating state. Nanowire junctions formed at the intersection of two Ni/NiO core/shell nanowires have emerged as a leading candidate structure where resistive switching occurs due to the formation and destruction of conducting filaments. However, significant knowledge gaps remain regarding the conduction mechanisms as measurements are typically only performed at room temperature. Here, we combine temperature-dependent current-voltage (IV) measurements from 15 - 300 K with magnetoresistance studies and achieve new insight into the nature of the conducting filaments. We identify a novel semiconducting state that behaves as a quantum point contact and find evidence for a possible electric-field driven phase transition. The insulating state exhibits unexpectedly complex IV characteristics that highlight the disordered nature of the ruptured filament while we find clear signs of anisotropic magnetoresistance in the metallic state. Our results expose previously unobserved behaviors in nanowire resistive switching devices and pave the way for future applications where both electrical and magnetic switching can be achieved in a single device. This work was supported by ONR Grant N-00014-15-1-2357.

Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling

NASA Astrophysics Data System (ADS)

Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi

2017-10-01

We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.

Room temperature ferroelectricity in one-dimensional single chain molecular magnets [{M(Δ)M(Λ)}(ox)2(phen)2]n (M = Fe and Mn)

NASA Astrophysics Data System (ADS)

Bhatt, Pramod; Mukadam, M. D.; Meena, S. S.; Mishra, S. K.; Mittal, R.; Sastry, P. U.; Mandal, B. P.; Yusuf, S. M.

2017-03-01

The ferroelectric materials are mainly focused on pure inorganic oxides; however, the organic molecule based materials have recently attracted great attention because of their multifunctional properties. The mixing of oxalate and phenanthroline ligands with metal ions (Fe or Mn) at room temperature followed by hydrothermal treatment results in the formation of one-dimensional single chain molecular magnets which exhibit room temperature dielectric and ferroelectric behavior. The compounds are chiral in nature, and exhibit a ferroelectric behavior, attributed to the polar point group C2, in which they crystallized. The compounds are also associated with a dielectric loss and thus a relaxation process. The observed electric dipole moment, essential for a ferroelectricity, has been understood quantitatively in terms of lattice distortions at two different lattice sites within the crystal structure. The studied single chain molecular magnetic materials with room temperature ferroelectric and dielectric properties could be of great technological importance in non-volatile memory elements, and high-performance insulators.

Solution-processed phase-change VO(2) metamaterials from colloidal vanadium oxide (VO(x)) nanocrystals.

PubMed

Paik, Taejong; Hong, Sung-Hoon; Gaulding, E Ashley; Caglayan, Humeyra; Gordon, Thomas R; Engheta, Nader; Kagan, Cherie R; Murray, Christopher B

2014-01-28

We demonstrate thermally switchable VO2 metamaterials fabricated using solution-processable colloidal nanocrystals (NCs). Vanadium oxide (VOx) NCs are synthesized through a nonhydrolytic reaction and deposited from stable colloidal dispersions to form NC thin films. Rapid thermal annealing transforms the VOx NC thin films into monoclinic, nanocrystalline VO2 thin films that show a sharp, reversible metal-insulator phase transition. Introduction of precise concentrations of tungsten dopings into the colloidal VOx NCs enables the still sharp phase transition of the VO2 thin films to be tuned to lower temperatures as the doping level increases. We fabricate "smart", differentially doped, multilayered VO2 films to program the phase and therefore the metal-insulator behavior of constituent vertically structured layers with temperature. With increasing temperature, we tailored the optical response of multilayered films in the near-IR and IR regions from that of a strong light absorber, in a metal-insulator structure, to that of a Drude-like reflector, characteristic of a pure metallic structure. We demonstrate that nanocrystal-based nanoimprinting can be employed to pattern multilayered subwavelength nanostructures, such as three-dimensional VO2 nanopillar arrays, that exhibit plasmonic dipolar responses tunable with a temperature change.

Chiral tunneling modulated by a time-periodic potential on the surface states of a topological insulator

PubMed Central

Li, Yuan; Jalil, Mansoor B. A.; Tan, S. G.; Zhao, W.; Bai, R.; Zhou, G. H.

2014-01-01

Time-periodic perturbation can be used to modify the transport properties of the surface states of topological insulators, specifically their chiral tunneling property. Using the scattering matrix method, we study the tunneling transmission of the surface states of a topological insulator under the influence of a time-dependent potential and finite gate bias voltage. It is found that perfect transmission is obtained for electrons which are injected normally into the time-periodic potential region in the absence of any bias voltage. However, this signature of Klein tunneling is destroyed when a bias voltage is applied, with the transmission probability of normally incident electrons decreasing with increasing gate bias voltage. Likewise, the overall conductance of the system decreases significantly when a gate bias voltage is applied. The characteristic left-handed helicity of the transmitted spin polarization is also broken by the finite gate bias voltage. In addition, the time-dependent potential modifies the large-angle transmission profile, which exhibits an oscillatory or resonance-like behavior. Finally, time-dependent transport modes (with oscillating potential in the THz frequency) can result in enhanced overall conductance, irrespective of the presence or absence of the gate bias voltage. PMID:24713634

Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect

NASA Astrophysics Data System (ADS)

Zhao, Chenyi; Zhong, Donglai; Qiu, Chenguang; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

2018-01-01

In this letter, we explore the vertical scaling-down behavior of carbon nanotube (CNT) network film field-effect transistors (FETs) and show that by using a high-efficiency gate insulator, we can substantially improve the subthreshold swing (SS) and its uniformity. By using an HfO2 layer with a thickness of 7.3 nm as the gate insulator, we fabricated CNT network film FETs with a long channel (>2 μm) that exhibit an SS of approximately 60 mV/dec. The preferred thickness of HfO2 as the gate insulator in a CNT network FET is between 7 nm and 10 nm, simultaneously yielding an excellent SS (<80 mV/decade) and low gate leakage. However, because of the statistical fluctuations of the network CNT channel, the lateral scaling of CNT network film-based FETs is more difficult than that of conventional FETs. Experiments suggest that excellent SS is difficult to achieve statistically in CNT network film FETs with a small channel length (smaller than the mean length of the CNTs), which eventually limits the further scaling down of this kind of CNT FET to the sub-micrometer regime.

Behavior of Insulated Carbon-FRP-Strengthened RC Beams Exposed to Fire

NASA Astrophysics Data System (ADS)

Sayin, B.

2014-09-01

There are two main approaches to improving the fire resistance of fiber-reinforced polymer (FRP) systems. While the most common method is to protect or insulate the FRP system, an other way is to use fibers and resins with a better fire performance. This paper presents a numerical investigation into the five protection behavior of insulated carbon-fiber-reinforced-polymer (CFRP)-strengthened reinforced concrete (RC) beams. The effects of external loading and thermal expansion of materials at elevated temperatures are taken into consideration in a finite-element model. The validity of the numerical model is demonstrated with results from an existing experimental study on insulated CFRP-strengthened RC beams. Conclusions of this investigation are employed to predict the structural behavior of CFRP-strengthened concrete structures.

Classification of topological insulators and superconductors in three spatial dimensions

NASA Astrophysics Data System (ADS)

Schnyder, Andreas P.; Ryu, Shinsei; Furusaki, Akira; Ludwig, Andreas W. W.

2008-11-01

We systematically study topological phases of insulators and superconductors (or superfluids) in three spatial dimensions. We find that there exist three-dimensional (3D) topologically nontrivial insulators or superconductors in five out of ten symmetry classes introduced in seminal work by Altland and Zirnbauer within the context of random matrix theory, more than a decade ago. One of these is the recently introduced Z2 topological insulator in the symplectic (or spin-orbit) symmetry class. We show that there exist precisely four more topological insulators. For these systems, all of which are time-reversal invariant in three dimensions, the space of insulating ground states satisfying certain discrete symmetry properties is partitioned into topological sectors that are separated by quantum phase transitions. Three of the above five topologically nontrivial phases can be realized as time-reversal invariant superconductors. In these the different topological sectors are characterized by an integer winding number defined in momentum space. When such 3D topological insulators are terminated by a two-dimensional surface, they support a number (which may be an arbitrary nonvanishing even number for singlet pairing) of Dirac fermion (Majorana fermion when spin-rotation symmetry is completely broken) surface modes which remain gapless under arbitrary perturbations of the Hamiltonian that preserve the characteristic discrete symmetries, including disorder. In particular, these surface modes completely evade Anderson localization from random impurities. These topological phases can be thought of as three-dimensional analogs of well-known paired topological phases in two spatial dimensions such as the spinless chiral (px±ipy) -wave superconductor (or Moore-Read Pfaffian state). In the corresponding topologically nontrivial (analogous to “weak pairing”) and topologically trivial (analogous to “strong pairing”) 3D phases, the wave functions exhibit markedly distinct behavior. When an electromagnetic U(1) gauge field and fluctuations of the gap functions are included in the dynamics, the superconducting phases with nonvanishing winding number possess nontrivial topological ground-state degeneracies.

Investigations of surface structural, dynamical, and magnetic properties of systems exhibiting multiferroicity, and topological phases by helium scattering spectroscopies

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Batanouny, Maged

2015-08-03

We propose to investigate the surface structural, dynamics and magnetic properties of the novel class of topological insulator crystals, as well as crystals that exhibit multiferroicity, magnetoelectricity and thermoelectricity. Topological insulators (TIs) are a new class of insulators in which a bulk gap for electronic excitations is generated because of the strong spin-orbit coupling inherent to these systems. These materials are distinguished from ordinary insulators by the presence of gapless metallic surface states, resembling chiral edge modes in quantum Hall systems, but with unconventional spin textures. These exotic metallic states are formed by topological conditions that also render the electrons travelling on such surfaces insensitive to scattering by impurities. The electronic quasi-particles populating the topological surface state are Dirac fermions; they have a linear dispersion and thus are massless just like photons. We propose to investigate the interaction of these massless Dirac fermions with the massive lattice in the newly discovered crystals, Bi2Se3, Bi2Te3 and Sb2Te3. We shall use inelastic helium beam scattering from surfaces to search for related signatures in surface phonon dispersions mappings that cover the entire surface Brillouin zone of these materials. Our recent investigations of the (001) surface of the multiferroic crystals (Li/Na)Cu2O2 revealed an anomalous surface structural behavior where surface Cumore » $$^{2+}$$ row rise above the surface plane as the crystal was cooled. Subsequent worming revealed the onset of a thermally activated incommensurate surface phase, driven by the elevated rows. We are currently investigating the structure of the magnetic phases in these quasi-one-dimensional magnetic rows. Multiferroics are excellent candidates for large magnetoelectric response. We propose to extend this investigation to the class of delafossites which are also multiferroics and have been investigated as good candidates for thermoelectric power devices. They are also typical triangular lattice antiferromagnets with geometric magnetic frustration that leads to helimagnetic structures.« less

New Techniques to Evaluate the Incendiary Behavior of Insulators

NASA Technical Reports Server (NTRS)

Buhler, Charles; Calle, Carlos; Clements, Sid; Trigwell, Steve; Ritz, Mindy

2008-01-01

New techniques for evaluating the incendiary behavior of insulators is presented. The onset of incendive brush discharges in air is evaluated using standard spark probe techniques for the case simulating approaches of an electrically grounded sphere to a charged insulator in the presence of a flammable atmosphere. However, this standard technique is unsuitable for the case of brush discharges that may occur during the charging-separation process for two insulator materials. We present experimental techniques to evaluate this hazard in the presence of a flammable atmosphere which is ideally suited to measure the incendiary nature of micro-discharges upon separation, a measurement never before performed. Other measurement techniques unique to this study include; surface potential measurements of insulators before, during and after contact and separation, as well as methods to verify fieldmeter calibrations using a charge insulator surface opposed to standard high voltage plates. Key words: Kapton polyimide film, incendiary discharges, brush discharges, contact and frictional electrification, ignition hazards, insulators, contact angle, surface potential measurements.

Temperature- and frequency-dependent dielectric behaviors of insulator/semiconductor (Al2O3/ZnO) nanolaminates with various ZnO thicknesses

NASA Astrophysics Data System (ADS)

Li, Jin; Bi, Xiaofang

2016-07-01

Al2O3/ZnO nanolaminates (NLs) with various ZnO sublayer thicknesses were prepared by atomic layer deposition. The Al2O3 sublayers are characterized as amorphous and the ZnO sublayers have an oriented polycrystalline structure. As the ZnO thickness decreases to a certain value, each NL exhibits a critical temperature at which its dielectric constant starts to rise quickly. Moreover, this temperature increases as the ZnO thickness is decreased further. On the other hand, the permittivity demonstrates a large value of several hundred at a frequency  ⩽1000 Hz, followed by a steplike decrease at a higher frequency. The change in the cut-off frequency with ZnO thickness is characterized by a hook function. It is revealed that the Coulomb confinement effect becomes predominant in the dielectric behaviors of the NLs with very thin ZnO. As the ZnO thickness decreases to about the same as or even smaller than the Bohr radius of ZnO, a great change in the carrier concentration and effective mass of ZnO is induced, which is shown to be responsible for the peculiar dielectric behaviors of Al2O3/ZnO with very thin ZnO. These findings provide insight into the prevailing mechanisms to optimize the dielectric properties of semiconductor/insulator laminates with nanoscale sublayer thickness.

7 CFR Exhibit B-2 to Subpart I of... - Breakdown of Construction Development for Determining Percentage Construction Completed

Code of Federal Regulations, 2011 CFR

2011-01-01

... concrete, usually reinforced, poured over gravel and a vapor barrier with perimeter insulation to prevent heat loss. 4. Subflooring 0 1 1 The installation of materials used for flooring that is laid directly..., and before the insulation is placed in the walls and ceiling. 14. Insulation 2 2 2 The installation of...

7 CFR Exhibit B-2 to Subpart I of... - Breakdown of Construction Development for Determining Percentage Construction Completed

Code of Federal Regulations, 2010 CFR

2010-01-01

... concrete, usually reinforced, poured over gravel and a vapor barrier with perimeter insulation to prevent heat loss. 4. Subflooring 0 1 1 The installation of materials used for flooring that is laid directly..., and before the insulation is placed in the walls and ceiling. 14. Insulation 2 2 2 The installation of...

7 CFR Exhibit B-2 to Subpart I of... - Breakdown of Construction Development for Determining Percentage Construction Completed

Code of Federal Regulations, 2012 CFR

2012-01-01

... concrete, usually reinforced, poured over gravel and a vapor barrier with perimeter insulation to prevent heat loss. 4. Subflooring 0 1 1 The installation of materials used for flooring that is laid directly..., and before the insulation is placed in the walls and ceiling. 14. Insulation 2 2 2 The installation of...

7 CFR Exhibit B-2 to Subpart I of... - Breakdown of Construction Development for Determining Percentage Construction Completed

Code of Federal Regulations, 2013 CFR

2013-01-01

... concrete, usually reinforced, poured over gravel and a vapor barrier with perimeter insulation to prevent heat loss. 4. Subflooring 0 1 1 The installation of materials used for flooring that is laid directly..., and before the insulation is placed in the walls and ceiling. 14. Insulation 2 2 2 The installation of...

7 CFR Exhibit B-2 to Subpart I of... - Breakdown of Construction Development for Determining Percentage Construction Completed

Code of Federal Regulations, 2014 CFR

2014-01-01

... concrete, usually reinforced, poured over gravel and a vapor barrier with perimeter insulation to prevent heat loss. 4. Subflooring 0 1 1 The installation of materials used for flooring that is laid directly..., and before the insulation is placed in the walls and ceiling. 14. Insulation 2 2 2 The installation of...

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Bilayer Photoresist Insulator for High Performance Organic Thin-Film Transistors on Plastic Films

NASA Astrophysics Data System (ADS)

Wang, He; Li, Chun-Hong; Pan, Feng; Wang, Hai-Bo; Yan, Dong-Hang

2009-11-01

A novel bilayer photoresist insulator is applied in flexible vanadyl-phthalocyanine (VOPc) organic thin-film transistors (OTFTs). The micron-size patterns of this photoresisit insulator can be directly defined only by photolithography without the etching process. Furthermore, these OTFTs exhibit high field-effect mobility (about 0.8 cm2/Vs) and current on/off ratio (about 106). In particular, they show rather low hysteresis (< 1 V). The results demonstrate that this bilayer photoresist insulator can be applied in large-area electronics and in the facilitation of patterning insulators.

On effective holographic Mott insulators

NASA Astrophysics Data System (ADS)

Baggioli, Matteo; Pujolàs, Oriol

2016-12-01

We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of `traffic-jam'-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

Pressure-induced metal-insulator transitions in chalcogenide NiS2-xSex

NASA Astrophysics Data System (ADS)

Hussain, Tayyaba; Oh, Myeong-jun; Nauman, Muhammad; Jo, Younjung; Han, Garam; Kim, Changyoung; Kang, Woun

2018-05-01

We report the temperature-dependent resistivity ρ(T) of chalcogenide NiS2-xSex (x = 0.1) using hydrostatic pressure as a control parameter in the temperature range of 4-300 K. The insulating behavior of ρ(T) survives at low temperatures in the pressure regime below 7.5 kbar, whereas a clear insulator-to-metallic transition is observed above 7.5 kbar. Two types of magnetic transitions, from the paramagnetic (PM) to the antiferromagnetic (AFM) state and from the AFM state to the weak ferromagnetic (WF) state, were evaluated and confirmed by magnetization measurement. According to the temperature-pressure phase diagram, the WF phase survives up to 7.5 kbar, and the transition temperature of the WF transition decreases as the pressure increases, whereas the metal-insulator transition temperature increases up to 9.4 kbar. We analyzed the metallic behavior and proposed Fermi-liquid behavior of NiS1.9Se0.1.

Physical origins of current and temperature controlled negative differential resistances in NbO 2

DOE PAGES

Kumar, Suhas; Wang, Ziwen; Davila, Noraica; ...

2017-09-22

Negative differential resistance behavior in oxide memristors, especially those using NbO 2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here in this paper, we examine NbO 2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the formermore » is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.« less

Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

Key role of lattice symmetry in the metal-insulator transition of NdNiO 3 films

DOE PAGES

Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; ...

2016-04-01

Here, bulk NdNiO 3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO 3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strainedmore » film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

Physical origins of current and temperature controlled negative differential resistances in NbO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Suhas; Wang, Ziwen; Davila, Noraica

Negative differential resistance behavior in oxide memristors, especially those using NbO 2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here in this paper, we examine NbO 2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the formermore » is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.« less

Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

NASA Astrophysics Data System (ADS)

Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

2016-06-01

The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

Chaotic behavior in electro-rotation

NASA Astrophysics Data System (ADS)

Lemaire, E.; Lobry, L.

2002-11-01

We study the dynamics of an insulating cylinder in a weakly conducting liquid when submitted to a DC electric field. The cylinder is free to rotate along its long axis which is perpendicular to the applied field. Above a threshold value of the electric field, the cylinder rotates in either direction with constant angular velocity. This instability is known as Quincke rotation and can be easily understood by considering the polarization induced by the free charges accumulation on the cylinder surface. Here we present preliminary experimental results which exhibit a chaotic dynamics of the cylinder for higher electric fields: the velocity is no longer constant and the rotation direction changes randomly. By taking into account the finite Maxwell-Wagner polarization relaxation time, we show that this chaotic behavior can be described by the Lorenz equations.

Transport Mechanisms in Organic Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fung, A. W. P.

1996-03-01

Recent success in fabricating field-effect transistors with polycrystalline α-sexithiophene (α-6T) has allowed us to study charge transport in this organic semiconductor. The appealing structural property that the oligomer chains are seated almost perpendicular to the substrate provides a model π-conjugated system which we find exhibits band transport at low temperatures. We observe a behavioral transition around 50K which is consistent with the metal-insulator transition in Holstein's small-polaron theory. The fact that we can observe intrinsic behavior means that the ambient-temperature mobility obtained in these transistors is optimal for α-6T. Agreement with the Holstein theory provides us with a prescription for rational design of materials for organic transistor applications. Work done in collaboration with L. Torsi, A. Dodabalapur, L. J. Rothberg and H. E. Katz.

Optically detecting the edge-state of a three-dimensional topological insulator under ambient conditions by ultrafast infrared photoluminescence spectroscopy

PubMed Central

Maezawa, Shun-ya; Watanabe, Hiroshi; Takeda, Masahiro; Kuroda, Kenta; Someya, Takashi; Matsuda, Iwao; Suemoto, Tohru

2015-01-01

Ultrafast infrared photoluminescence spectroscopy was applied to a three-dimensional topological insulator TlBiSe2 under ambient conditions. The dynamics of the luminescence exhibited bulk-insulating and gapless characteristics bounded by the bulk band gap energy. The existence of the topologically protected surface state and the picosecond-order relaxation time of the surface carriers, which was distinguishable from the bulk response, were observed. Our results provide a practical method applicable to topological insulators under ambient conditions for device applications. PMID:26552784

Printed circuit dispersive transmission line

DOEpatents

Ikezi, Hiroyuki; Lin-Liu, Yuh-Ren; DeGrassie, John S.

1991-01-01

A printed circuit dispersive transmission line structure is disclosed comprising an insulator, a ground plane formed on one surface of the insulator, a first transmission line formed on a second surface of the insulator, and a second transmission line also formed on the second surface of the insulator and of longer length than the first transmission line and periodically intersecting the first transmission line. In a preferred embodiment, the transmission line structure exhibits highly dispersive characteristics by designing the length of one of the transmission line between two adjacent periodic intersections to be longer than the other.

Development of an external ceramic insulation for the space shuttle orbiter. Part 2: Optimization

NASA Technical Reports Server (NTRS)

Tanzilli, R. A. (Editor)

1973-01-01

The basic insulation improvement study concentrated upon evaluating variables which could result in significant near-term gains in mechanical behavior and insulation effectiveness of the baseline system. The approaches undertaken included: evaluation of small diameter fibers, optimization of binder: slurry characteristics, evaluation of techniques for controlling fiber orientation, optimization of firing cycle, and the evaluation of methods for improving insulation efficiency. A detailed discussion of these basic insulation improvement studies is presented.

Insulating phase in Sr2IrO4: An investigation using critical analysis and magnetocaloric effect

NASA Astrophysics Data System (ADS)

Bhatti, Imtiaz Noor; Pramanik, A. K.

2017-01-01

The nature of insulating phase in 5d based Sr2IrO4 is quite debated as the theoretical as well as experimental investigations have put forward evidences in favor of both magnetically driven Slater-type and interaction driven Mott-type insulator. To understand this insulating behavior, we have investigated the nature of magnetic state in Sr2IrO4 through studying critical exponents, low temperature thermal demagnetization and magnetocaloric effect. The estimated critical exponents do not exactly match with any universality class, however, the values obey the scaling behavior. The exponent values suggest that spin interaction in present material is close to mean-field model. The analysis of low temperature thermal demagnetization data, however, shows dual presence of localized- and itinerant-type of magnetic interaction. Moreover, field dependent change in magnetic entropy indicates magnetic interaction is close to mean-field type. While this material shows an insulating behavior across the magnetic transition, yet a distinct change in slope in resistivity is observed around Tc. We infer that though the insulating phase in Sr2IrO4 is more close to be Slater-type but the simultaneous presence of both Slater- and Mott-type is the likely scenario for this material.

Enhancement of thermoelectric power factor of Sr2CoMoO6 double perovskite by annealing in reducing atmosphere

NASA Astrophysics Data System (ADS)

Tanwar, Khagesh; Saxena, Mandvi; Maiti, Tanmoy

2017-10-01

In general, n-type thermoelectric materials are rather difficult to design. This study particularly pivoted on designing potential environmentally benign oxides based n-type thermoelectric material. We synthesized Sr2CoMoO6 (SCMO) polycrystalline ceramics via the solid-state synthesis route. XRD, SEM, and thermoelectric measurements were carried out for phase constitution, microstructure analysis, and to determine its potential for thermoelectric applications. As-sintered SCMO sample showed an insulator like behavior till 640 °C after which it exhibited an n-type non-degenerate semiconductor behavior followed by a p-n type conduction switching. To stabilize a high temperature n-type behavior, annealing of SCMO in reducing atmosphere (H2) at 1000 °C was carried out. After annealing, the SCMO demonstrated an n-type semiconductor behavior throughout the temperature range of measurement. The electrical conductivity (σ) and the power factor (S2σ) were found to be increased manifold in the annealed SCMO double perovskite.

Few-layer 1T‧ MoTe2 as gapless semimetal with thickness dependent carrier transport

NASA Astrophysics Data System (ADS)

Song, Peng; Hsu, Chuanghan; Zhao, Meng; Zhao, Xiaoxu; Chang, Tay-Rong; Teng, Jinghua; Lin, Hsin; Loh, Kian Ping

2018-07-01

Semimetal MoTe2 can be a type II Weyl semimetal in the bulk, but monolayer of this material is predicted to be quantum spin hall insulators. This dramatic change in electronic properties with number of layers is an excellent example of the dimensional effects of quantum transport. However, a detailed experimental study of the carrier transport and band structure of ultrathin semimetal MoTe2 is lacking so far. We performed magneto-transport measurements to study the conduction behavior and quantum phase coherence of 1T‧ MoTe2 as a function of its thickness. We show that due to a unique two-band transport mechanism (synergetic contribution from electron conduction and hole conduction), the conduction behavior of 1T‧ MoTe2 changes from metallic to p-type unipolar, and finally to ambipolar as the thickness decreases, suggesting that this effect can be used in devices by effectively controlling the thickness. Our transport studies, optical measurements and first-principles electronic structure calculations reveal that 1T‧ MoTe2 remains gapless down to a few (~2–3) layers. Despite being gapless, 1T‧ MoTe2 exhibits metal-insulator transition at 3-layer thickness, due to enhanced carrier localization effect.

Non-local order in Mott insulators, duality and Wilson loops

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rath, Steffen Patrick, E-mail: steffen.rath@ph.tum.de; Simeth, Wolfgang; Endres, Manuel

2013-07-15

It is shown that the Mott insulating and superfluid phases of bosons in an optical lattice may be distinguished by a non-local ‘parity order parameter’ which is directly accessible via single site resolution imaging. In one dimension, the lattice Bose model is dual to a classical interface roughening problem. We use known exact results from the latter to prove that the parity order parameter exhibits long range order in the Mott insulating phase, consistent with recent experiments by Endres et al. [M. Endres, M. Cheneau, T. Fukuhara, C. Weitenberg, P. Schauß, C. Gross, L. Mazza, M.C. Bañuls, L. Pollet, I.more » Bloch, et al., Science 334 (2011) 200]. In two spatial dimensions, the parity order parameter can be expressed in terms of an equal time Wilson loop of a non-trivial U(1) gauge theory in 2+1 dimensions which exhibits a transition between a Coulomb and a confining phase. The negative logarithm of the parity order parameter obeys a perimeter law in the Mott insulator and is enhanced by a logarithmic factor in the superfluid. -- Highlights: •Number statistics of cold atoms in optical lattices show non-local correlations. •These correlations are measurable via single site resolution imaging. •Incompressible phases exhibit an area law in particle number fluctuations. •This leads to long-range parity order of Mott-insulators in one dimension. •Parity order in 2d is connected with a Wilson-loop in a lattice gauge theory.« less

Effects of hierarchical structures and insulating liquid media on adhesion

NASA Astrophysics Data System (ADS)

Yang, Weixu; Wang, Xiaoli; Li, Hanqing; Song, Xintao

2017-11-01

Effects of hierarchical structures and insulating liquid media on adhesion are investigated through a numerical adhesive contact model established in this paper, in which hierarchical structures are considered by introducing the height distribution into the surface gap equation, and media are taken into account through the Hamaker constant in Lifshitz-Hamaker approach. Computational methods such as inexact Newton method, bi-conjugate stabilized (Bi-CGSTAB) method and fast Fourier transform (FFT) technique are employed to obtain the adhesive force. It is shown that hierarchical structured surface exhibits excellent anti-adhesive properties compared with flat, micro or nano structured surfaces. Adhesion force is more dependent on the sizes of nanostructures than those of microstructures, and the optimal ranges of nanostructure pitch and maximum height for small adhesion force are presented. Insulating liquid media effectively decrease the adhesive interaction and 1-bromonaphthalene exhibits the smallest adhesion force among the five selected media. In addition, effects of hierarchical structures with optimal sizes on reducing adhesion are more obvious than those of the selected insulating liquid media.

Inducement of ferromagnetic-metallic phase in intermediate-doped charge-ordered Pr0.75Na0.25MnO3 manganite by K+ substitution

NASA Astrophysics Data System (ADS)

Rozilah, R.; Ibrahim, N.; Mohamed, Z.; Yahya, A. K.; Khan, Nawazish A.; Khan, M. Nasir

2017-09-01

Polycrystalline Pr0.75Na0.25-xKxMnO3 (x = 0, 0.05, 0.10, 0.15 and 0.20) ceramics were prepared using conventional solid-state method and their structural, magnetic and electrical transport properties were investigated. Magnetization versus temperature measurements showed un-substituted sample exhibited paramagnetic behavior with charge-ordered temperature, TCO around 218 K followed by antiferromagnetic behavior at transition temperature, TN ∼ 170 K. K+-substitution initially weakened CO state for x = 0.05-0.10 then successfully suppressed the CO state for x = 0.15-0.20 and inducing ferromagnetic-paramagnetic transition with Curie temperature, TC increased with x. In addition, deviation of the temperature dependence of inverse magnetic susceptibility curves from the Curie-Weiss law suggests the existence of Griffiths phase-like increased with x. Magnetization versus magnetic field curves show existence of hysteresis loops at T < 260 K (x = 0) and T < 180 K (x = 0.05-0.10), which related to metamagnetic transition occurring at critical field. Electrical resistivity measurements showed an insulating behavior for x = 0 sample while for x = 0.05-0.20 samples showed metal-insulator transition and transition temperature, TMI increased with x. The increased in TC and TMI are attributed to the increase in tolerance factor which indicates reduction in MnO6 octahedral distortion consequently enhanced double exchange interaction.

Revival of ferromagnetic behavior in charge-ordered Pr0.75Na0.25MnO3 manganite by ruthenium doping at Mn site and its MR effect

NASA Astrophysics Data System (ADS)

Elyana, E.; Mohamed, Z.; Kamil, S. A.; Supardan, S. N.; Chen, S. K.; Yahya, A. K.

2018-02-01

Ru doping in charge-ordered Pr0.75Na0.25Mn1-xRuxO3 (x = 0-0.1) manganites was studied to investigate its effect on structure, electrical transport, magnetic properties, and magnetotransport properties. DC electrical resistivity (ρ), magnetic susceptibility, and χ' measurements showed that sample x = 0 exhibits insulating behavior within the entire temperature range and antiferromagnetic (AFM) behavior below the charge-ordering (CO) transition temperature TCO of 221 K. Ru4+ substitution (x>0.01) suppressed the CO state, which resulted in the revival of paramagnetic to ferromagnetic (FM) transition at the Curie temperature Tc, increasing from 120 K (x = 0.01) to 193 K (x = 0.1). Deviation from the Curie-Weiss law above Tc in the 1/χ' versus T plot for x = 0.01 doped samples indicated the existence of Griffiths phase with Griffith temperature at 169 K. Electrical resistivity measurements showed that Ru4+ substitution increased the metallic-to-insulating transition temperature TMI from 144 K (x = 0.01) to 192 K (x = 0.05) due to enhanced double-exchange mechanism, but TMI decreased to 176 K (x = 0.1) probably due to the existence of AFM clusters within the FM domain. The present work also discussed the possible theoretical models at the resistivity curve of Pr0.75Na0.25Mn1-xRuxO3 (x = 0-0.1) for the entire temperature range.

Tunable Intrinsic Spin Hall Conductivities in Bi2(Se,Te)3 Topological Insulators

NASA Astrophysics Data System (ADS)

Şahin, Cüneyt; Flatté, Michael E.

2015-03-01

It has been recently shown by spin-transfer torque measurements that Bi2Se3 exhibits a very large spin Hall conductivity (SHC). It is expected that Bi2Te3, a topological insulator with similar crystal and band structures as well as large spin-orbit coupling, would also exhibit a giant SHC. In this study we have calculated intrinsic spin Hall conductivities of Bi2Se3andBi2Te3 topological insulators from a tight-binding Hamiltonian including two nearest-neighbor interactions. We have calculated the Berry curvature, used the Kubo formula in the static, clean limit and shown that both materials exhibit giant spin Hall conductivities, consistent with the results of Ref. 1 and larger than previously reported Bi1-xSbx alloys. The density of Berry curvature has also been computed from the full Brillouin zone in order to compute the dependence of the SHC in these materials on the Fermi energy. Finally we report the intrinsic SHC for Bi2(Se,Te)3 topological insulators, which changes dramatically with doping or gate voltage. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

Cryopumping in Cryogenic Insulations for a Reusable Launch Vehicle

NASA Technical Reports Server (NTRS)

Johnson, Theodore F.; Weiser, Erik S.; Grimsley, Brian W.; Jensen, Brian J.

2003-01-01

Testing at cryogenic temperatures was performed to verify the material characteristics and manufacturing processes of reusable propellant tank cryogenic insulations for a Reusable Launch Vehicle (RLV). The unique test apparatus and test methods developed for the investigation of cryopumping in cryogenic insulations are described. Panel level test specimens with various types of cryogenic insulations were subjected to a specific thermal profile where the temperature varied from -262 C to 21 C. Cryopumping occurred if the interior temperature of the specimen exhibited abnormal temperature fluctuations, such as a sudden decrease in temperature during the heating phase.

Printed circuit dispersive transmission line

DOEpatents

Ikezi, H.; Lin-Liu, Y.R.; DeGrassie, J.S.

1991-08-27

A printed circuit dispersive transmission line structure is disclosed comprising an insulator, a ground plane formed on one surface of the insulator, a first transmission line formed on a second surface of the insulator, and a second transmission line also formed on the second surface of the insulator and of longer length than the first transmission line and periodically intersecting the first transmission line. In a preferred embodiment, the transmission line structure exhibits highly dispersive characteristics by designing the length of one of the transmission line between two adjacent periodic intersections to be longer than the other. 5 figures.

Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2013-04-08

An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Connecting thermoelectric performance and topological-insulator behavior: Bi 2Te 3 and Bi 2Te 2Se from first principles

DOE PAGES

Shi, Hongliang; Parker, David S.; Du, Mao-Hua; ...

2015-01-20

Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi 2Te 2Se in relation to Bi 2Te 3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

Many-body instabilities and mass generation in slow Dirac materials

NASA Astrophysics Data System (ADS)

Triola, Christopher; Zhu, Jian-Xin; Migliori, Albert; Balatsky, Alexander V.

2015-07-01

Some Kondo insulators are expected to possess topologically protected surface states with linear Dirac spectrum: the topological Kondo insulators. Because the bulk states of these systems typically have heavy effective electron masses, the surface states may exhibit extraordinarily small Fermi velocities that could force the effective fine structure constant of the surface states into the strong coupling regime. Using a tight-binding model, we study the many-body instabilities of these systems and identify regions of parameter space in which the system exhibits spin density wave and charge density wave order.

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

PubMed

Pickett, Matthew D; Williams, R Stanley

2012-06-01

We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.

Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

DOE PAGES

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; ...

2018-05-07

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulatormore » behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.« less

Tuning metal-insulator behavior in LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui

Here, we present electrical and structural characterization of epitaxial LaTiO 3/SrTiO 3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near 1 electron per Ti occupation within the SrTiO 3 well, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulatormore » behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.« less

Samarium Hexaboride: The First True 3D Topological Insulator?

NASA Astrophysics Data System (ADS)

Wolgast, Steven G.

The recent theoretical prediction of a topologically protected surface state in the mixed-valent insulator SmB6 has motivated a series of charge transport studies, which are presented here. It is first studied using a specialized configuration designed to distinguish bulk-dominated conduction from surface-dominated conduction. As the material is cooled below 4 K, it exhibits a crossover from thermally activated bulk transport to metallic surface conduction with a fully insulating bulk. The robustness and magnitude of the surface conductivity, as is manifest in the literature of SmB6, is strong evidence for the topological insulator (TI) metallic surface states predicted for this material. This resolves a decades-old puzzle surrounding the low-temperature behavior of SmB6. Next, the magnetotransport properties of the surface are investigated using a Corbino disk geometry, which can directly measure the conductivity of individual surfaces. Both (011) and (001) crystal surfaces show a strong negative magnetoresistance at all magnetic field angles, due primarily to changes in the carrier density. The low mobility value accounts for the failure so far to observe Shubnikov-de Haas oscillations below 95 T. Small variations in the mobility and temperature dependence suggest a suppression of Kondo scattering from native oxide-layer magnetic moments. At low fields, a dynamical field-sweep-rate-dependent hysteretic behavior is observed. It persists at the slowest sweep rates, and cannot be explained by quantum interference corrections; it is likely due to extrinsic effects such as the magnetocaloric effect or glassy ordering of the native oxide moments. Pulsed magnetic field measurements up to 60 T at temperatures throughout the crossover regime clearly distinguish the surface magnetoresistance from the bulk magnetoresistance. The bulk magnetoresistance is due to a reduction in the bulk gap with increasing magnetic field. Finally, small subsurface cracks formed in SmB6 via systematic scratching or sanding results in a counter-intuitive increase in the electrical conduction due to the unique surface-conducting property of TIs, strengthening the building case for SmB 6's topological nature. This material is attractive as a TI because its bulk is fully insulating at a readily achieved 2 K, but it presents a large number of scientific mysteries and experimental challenges for future research.

Thermal Performance of Composite Flexible Blanket Insulations for Hypersonic Aerospace Vehicles

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A.

1993-01-01

This paper describes the thermal performance of a Composite Flexible Blanket Insulation (C.F.B.I.) considered for potential use as a thermal protection system or thermal insulation for future hypersonic vehicles such as the National Aerospace Plane (N.A.S.P.). Thermophysical properties for these insulations were also measured including the thermal conductivity at various temperatures and pressures and the emissivity of the fabrics used in the flexible insulations. The thermal response of these materials subjected to aeroconvective heating from a plasma arc is also described. Materials tested included two surface variations of the insulations, and similar insulations coated with a Protective Ceramic Coating (P.C.C.). Surface and backface temperatures were measured in the flexible insulations and on Fibrous Refractory Composite Insulation (F.R.C.I.) used as a calibration model. The uncoated flexible insulations exhibited good thermal performance up to 35 W/sq cm. The use of a P.C.C. to protect these insulations at higher heating rates is described. The results from a computerized thermal analysis model describing thermal response of those materials subjected to the plasma arc conditions are included. Thermal and optical properties were determined including thermal conductivity for the rigid and flexible insulations and emissivity for the insulation fabrics. These properties were utilized to calculate the thermal performance of the rigid and flexible insulations at the maximum heating rate.

Fabrication of interface-modified ramp-edge junction on YBCO ground plane with multilayer structure

NASA Astrophysics Data System (ADS)

Wakana, H.; Adachi, S.; Kamitani, A.; Sugiyama, H.; Sugano, T.; Horibe, M.; Ishimaru, Y.; Tarutani, Y.; Tanabe, K.

2003-10-01

We examined the fabrication conditions to obtain high-quality ramp-edge Josephson junctions on a liquid-phase-epitaxy YBa 2Cu 3O y (LPE-YBCO) ground plane, in particular, focusing on the fabrication of a suitable insulating layer on the ground plane and the post-annealing conditions to load oxygen to the ground plane. A (LaAlO 3) 0.3-(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) insulating film on the ground planes exhibited a conductance ranging from 10 -4 to 10 -8 S after deposition of an upper superconducting film, suggesting existence of some leak paths through the LSAT insulating layer. By introducing approximately 30 nm thick SrTiO 3 (STO) buffer layers on both side of the LSAT insulating layer. We reproducibly obtained a conductance lower than 10 -8 S. The dielectric constant of the STO/LSAT/STO layer was 32, which was slightly larger than that of the single LSAT layer. It was found that a very slow cooling rate of 1.0 °C/h in oxygen was needed to fully oxidize the ground plane through the STO/LSAT/STO insulating layers, while the oxidation time could be effectively reduced by introducing via holes in the insulating layer at an interval of 200 μm. Ramp-edge junctions on LPE-YBCO ground planes with STO/LSAT/STO insulating layers exhibited a 1 σ-spread in Ic of 8% for 100-junction series-arrays and a sheet inductance of 0.7 pH/□ at 4.2 K.

The Shock and Vibration Digest. Volume 18, Number 11

DTIC Science & Technology

1986-11-01

instantaneous clearances for various conductor loadings and weather conditions. Composite insulators are now more widely used. They consists...ter under gunfire. However, their electrical and mechanical behaviors are mote complicated than those of analogous porcelain insulators because...mechanical considerations by discussing recent research papets. Tensile tests on composite insulators have shown that short-term tensile

Evaluation of three thermal protection systems in a hypersonic high-heating-rate environment induced by an elevon deflected 30 deg

NASA Technical Reports Server (NTRS)

Taylor, A. H.; Jackson, L. R.; Weinstein, I.

1977-01-01

Three thermal protection systems proposed for a hypersonic research airplane were subjected to high heating rates in the Langley 8 foot, high temperature structures tunnel. Metallic heat sink (Lockalloy), reusable surface insulation, and insulator-ablator materials were each tested under similar conditions. The specimens were tested for a 10 second exposure on the windward side of an elevon deflected 30 deg. The metallic heat sink panel exhibited no damage; whereas the reusable surface insulation tiles were debonded from the panel and the insulator-ablator panel eroded through its thickness, thus exposing the aluminum structure to the Mach 7 environment.

Revivals of electron currents and topological-band insulator transitions in 2D gapped Dirac materials

NASA Astrophysics Data System (ADS)

Romera, E.; Bolívar, J. C.; Roldán, J. B.; de los Santos, F.

2016-07-01

We have studied the time evolution of electron wave packets in silicene under perpendicular magnetic and electric fields to characterize topological-band insulator transitions. We have found that at the charge neutrality points, the periodicities exhibited by the wave packet dynamics (classical and revival times) reach maximum values, and that the electron currents reflect the transition from a topological insulator to a band insulator. This provides a signature of topological phase transition in silicene that can be extended to other 2D Dirac materials isostructural to graphene and with a buckled structure and a significant spin-orbit coupling.

Nonequilibrium restoration of duality symmetry in the vicinity of the superconductor-to-insulator transition

NASA Astrophysics Data System (ADS)

Tamir, I.; Doron, A.; Levinson, T.; Gorniaczyk, F.; Tewari, G. C.; Shahar, D.

2017-09-01

The magnetic field driven superconductor-to-insulator transition in thin films is theoretically understood in terms of the notion of vortex-charge duality symmetry. The manifestation of such symmetry is the exchange of roles of current and voltage between the superconductor and the insulator. While experimental evidence obtained from amorphous indium oxide films supported such duality symmetry, it is shown to be broken, counterintuitively, at low temperatures where the insulating phase exhibits discontinuous current-voltage characteristics. Here, we demonstrate that it is possible to effectively restore duality symmetry by driving the system beyond the discontinuity into its high current, far from equilibrium, state.

Dispersion of borax in plastic is excellent fire-retardant heat insulator

NASA Technical Reports Server (NTRS)

Evans, H.; Hughes, J.; Schmitz, F.

1967-01-01

A mix of borax powder and a chlorinated anhydrous polyester resin yields a plastic composition that is fire-retardant, yields a minimum of toxic gases when heated, and exhibits high thermal insulating properties. This composition can be used as a coating or can be converted into laminated or cast shapes.

7 CFR Exhibit D to Subpart A of... - Thermal Performance Construction Standards

Code of Federal Regulations, 2013 CFR

2013-01-01

... floor insulation, the total heat loss attributed to the floor from the heated area shall not exceed the heat loss calculated for floors with required insulation. AInsulation may be omitted from floors over.... Definitions A. British thermal unit (Btu) means the quantity of heat required to raise the temperature of one...

7 CFR Exhibit D to Subpart A of... - Thermal Performance Construction Standards

Code of Federal Regulations, 2014 CFR

2014-01-01

... floor insulation, the total heat loss attributed to the floor from the heated area shall not exceed the heat loss calculated for floors with required insulation. AInsulation may be omitted from floors over.... Definitions A. British thermal unit (Btu) means the quantity of heat required to raise the temperature of one...

7 CFR Exhibit D to Subpart A of... - Thermal Performance Construction Standards

Code of Federal Regulations, 2012 CFR

2012-01-01

... floor insulation, the total heat loss attributed to the floor from the heated area shall not exceed the heat loss calculated for floors with required insulation. AInsulation may be omitted from floors over.... Definitions A. British thermal unit (Btu) means the quantity of heat required to raise the temperature of one...

7 CFR Exhibit D to Subpart A of... - Thermal Performance Construction Standards

Code of Federal Regulations, 2011 CFR

2011-01-01

... floor insulation, the total heat loss attributed to the floor from the heated area shall not exceed the heat loss calculated for floors with required insulation. AInsulation may be omitted from floors over.... Definitions A. British thermal unit (Btu) means the quantity of heat required to raise the temperature of one...

7 CFR Exhibit D to Subpart A of... - Thermal Performance Construction Standards

Code of Federal Regulations, 2010 CFR

2010-01-01

... floor insulation, the total heat loss attributed to the floor from the heated area shall not exceed the heat loss calculated for floors with required insulation. AInsulation may be omitted from floors over.... Definitions A. British thermal unit (Btu) means the quantity of heat required to raise the temperature of one...

Electronic evidence of an insulator–superconductor crossover in single-layer FeSe/SrTiO3 films

PubMed Central

He, Junfeng; Liu, Xu; Zhang, Wenhao; Zhao, Lin; Liu, Defa; He, Shaolong; Mou, Daixiang; Li, Fangsen; Tang, Chenjia; Li, Zhi; Wang, Lili; Peng, Yingying; Liu, Yan; Chen, Chaoyu; Yu, Li; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Chen, Xi; Ma, Xucun; Xue, Qikun; Zhou, X. J.

2014-01-01

In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic bad metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. No evidence of doping-induced insulator–superconductor transition (or crossover) has been reported in the iron-based compounds so far. Here, we report an electronic evidence of an insulator–superconductor crossover observed in the single-layer FeSe film grown on a SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with increasing carrier concentration. In particular, the insulator–superconductor crossover in FeSe/SrTiO3 film exhibits similar behaviors to that observed in the cuprate superconductors. Our results suggest that the observed insulator–superconductor crossover may be associated with the two-dimensionality that enhances electron localization or correlation. The reduced dimensionality and the interfacial effect provide a new pathway in searching for new phenomena and novel superconductors with a high transition temperature. PMID:25502774

Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

NASA Astrophysics Data System (ADS)

Kou, Liangzhi; Fu, Huixia; Ma, Yandong; Yan, Binghai; Liao, Ting; Du, Aijun; Chen, Changfeng

2018-02-01

We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). We showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by C H2OH , which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

PubMed

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-08-02

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

PubMed Central

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-01-01

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed. PMID:28773772

Correlation-driven charge order at the interface between a Mott and a band insulator.

PubMed

Pentcheva, Rossitza; Pickett, Warren E

2007-07-06

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory within the local density approximation including a Hubbard U to (n, m) multilayers, 1

Electronic Structure at Oxide Interfaces

DTIC Science & Technology

2014-06-01

of materials with desired correlated electron properties such as ferromagnetism with a high Curie temperature, high transition temperature...approximation and therefore the canonical Mott picture is unable to account for the insulating behavior of these materials . We resolve this apparent...the two materials . LaTiO3 shows insulating behavior with a small excitation gap set by Ti d-d transitions and a wide energy separation between Ti d

Role of four-fermion interaction and impurity in the states of two-dimensional semi-Dirac materials.

PubMed

Wang, Jing

2018-03-28

We study the effects of four-fermion interaction and impurity on the low-energy states of 2D semi-Dirac materials by virtue of the unbiased renormalization group approach. The coupled flow equations that govern the energy-dependent evolutions of all correlated interaction parameters are derived after taking into account one-loop corrections from the interplay between four-fermion interaction and impurity. Whether and how four-fermion interaction and impurity influence the low-energy properties of 2D semi-Dirac materials are discreetly explored and addressed attentively. After carrying out the standard renormalization group analysis, we find that both trivial insulating and nontrivial semimetal states are qualitatively stable against all four kinds of four-fermion interactions. However, while switching on both four-fermion interaction and impurity, certain insulator-semimetal phase transitions and the distance of Dirac nodal points can be respectively induced and modified due to their strong interplay and intimate competition. Moreover, several non-Fermi liquid behaviors that deviate from the conventional Fermi liquids are exhibited at the lowest-energy limit.

Switching adhesion forces by crossing the metal–insulator transition in Magnéli-type vanadium oxide crystals

PubMed Central

Klemm, Matthias; Horn, Siegfried; Woydt, Mathias

2011-01-01

Summary Magnéli-type vanadium oxides form the homologous series VnO2 n -1 and exhibit a temperature-induced, reversible metal–insulator first order phase transition (MIT). We studied the change of the adhesion force across the transition temperature between the cleavage planes of various vanadium oxide Magnéli phases (n = 3 … 7) and spherical titanium atomic force microscope (AFM) tips by systematic force–distance measurements with a variable-temperature AFM under ultrahigh vacuum conditions (UHV). The results show, for all investigated samples, that crossing the transition temperatures leads to a distinct change of the adhesion force. Low adhesion corresponds consistently to the metallic state. Accordingly, the ability to modify the electronic structure of the vanadium Magnéli phases while maintaining composition, stoichiometry and crystallographic integrity, allows for relating frictional and electronic material properties at the nano scale. This behavior makes the vanadium Magnéli phases interesting candidates for technology, e.g., as intelligent devices or coatings where switching of adhesion or friction is desired. PMID:21977416

Coupling effect of topological states and Chern insulators in two-dimensional triangular lattices

NASA Astrophysics Data System (ADS)

Zhang, Jiayong; Zhao, Bao; Xue, Yang; Zhou, Tong; Yang, Zhongqin

2018-03-01

We investigate topological states of two-dimensional (2D) triangular lattices with multiorbitals. Tight-binding model calculations of a 2D triangular lattice based on px and py orbitals exhibit very interesting doubly degenerate energy points at different positions (Γ and K /K' ) in momentum space, with quadratic non-Dirac and linear Dirac band dispersions, respectively. Counterintuitively, the system shows a global topologically trivial rather than nontrivial state with consideration of spin-orbit coupling due to the "destructive interference effect" between the topological states at the Γ and K /K' points. The topologically nontrivial state can emerge by introducing another set of triangular lattices to the system (bitriangular lattices) due to the breakdown of the interference effect. With first-principles calculations, we predict an intrinsic Chern insulating behavior (quantum anomalous Hall effect) in a family of the 2D triangular lattice metal-organic framework of Co(C21N3H15) (TPyB-Co) from this scheme. Our results provide a different path and theoretical guidance for the search for and design of new 2D topological quantum materials.

Role of four-fermion interaction and impurity in the states of two-dimensional semi-Dirac materials

NASA Astrophysics Data System (ADS)

Wang, Jing

2018-03-01

We study the effects of four-fermion interaction and impurity on the low-energy states of 2D semi-Dirac materials by virtue of the unbiased renormalization group approach. The coupled flow equations that govern the energy-dependent evolutions of all correlated interaction parameters are derived after taking into account one-loop corrections from the interplay between four-fermion interaction and impurity. Whether and how four-fermion interaction and impurity influence the low-energy properties of 2D semi-Dirac materials are discreetly explored and addressed attentively. After carrying out the standard renormalization group analysis, we find that both trivial insulating and nontrivial semimetal states are qualitatively stable against all four kinds of four-fermion interactions. However, while switching on both four-fermion interaction and impurity, certain insulator-semimetal phase transitions and the distance of Dirac nodal points can be respectively induced and modified due to their strong interplay and intimate competition. Moreover, several non-Fermi liquid behaviors that deviate from the conventional Fermi liquids are exhibited at the lowest-energy limit.

Development of polyisocyanurate pour foam formulation for space shuttle external tank thermal protection system

NASA Technical Reports Server (NTRS)

Harvey, James A.; Butler, John M.; Chartoff, Richard P.

1988-01-01

Four commercially available polyisocyanurate polyurethane spray-foam insulation formulations are used to coat the external tank of the space shuttle. There are several problems associated with these formulations. For example, some do not perform well as pourable closeout/repair systems. Some do not perform well at cryogenic temperatures (poor adhesion to aluminum at liquid nitrogen temperatures). Their thermal stability at elevated temperatures is not adequate. A major defect in all the systems is the lack of detailed chemical information. The formulations are simply supplied to NASA and Martin Marietta, the primary contractor, as components; Part A (isocyanate) and Part B (poly(s) and additives). Because of the lack of chemical information the performance behavior data for the current system, NASA sought the development of a non-proprietary room temperature curable foam insulation. Requirements for the developed system were that it should exhibit equal or better thermal stability both at elevated and cryogenic temperatures with better adhesion to aluminum as compared to the current system. Several formulations were developed that met these requirements, i.e., thermal stability, good pourability, and good bonding to aluminum.

Advanced high frequency partial discharge measuring system

NASA Technical Reports Server (NTRS)

Karady, George G.

1994-01-01

This report explains the Advanced Partial Discharge Measuring System in ASU's High Voltage Laboratory and presents some of the results obtained using the setup. While in operation an insulation is subjected to wide ranging temperature and voltage stresses. Hence, it is necessary to study the effect of temperature on the behavior of partial discharges in an insulation. The setup described in this report can be used to test samples at temperatures ranging from -50 C to 200 C. The aim of conducting the tests described herein is to be able to predict the behavior of an insulation under different operating conditions in addition to being able to predict the possibility of failure.

Unusual terahertz spectral weight and conductivity dynamics of the insulator-metal transition in Pr0.5Nd0.5NiO3 thin films

NASA Astrophysics Data System (ADS)

Santhosh Kumar, K.; Das, Sarmistha; Eswara Phanindra, V.; Rana, D. S.

2017-12-01

The metal-insulator transition (MIT) in correlated systems is a central phenomenon that possesses potential for several emerging technologies. We investigate the kinetics of such MIT in perovskite nickelates by studying the terahertz (THz) low-energy charge dynamics in orthorhombic and tetragonal symmetries of Pr0.5Nd0.5NiO3 thin films. The THz conductivity of the orthorhombic thin film is dominated by Drude behavior in the entire temperature range, albeit a dominant anomaly at and around the MIT region. The tetragonal thin film exhibits different overall THz conductivity dynamics though, i.e. of a Drude-Smith (DS) type in the entire temperature range, the DS coefficient signifying dominant backscattering peaks in the MIT region. While the overall THz dynamics profile is different for the two films, a unique yet similar sensitivity of the I-M transition regions of both films to THz frequencies underlines the fundamental origin of the bi-critical phase around MIT of the nickelates. The peculiar behavior around the I-M transition, as evaluated in the framework of a percolative path approximation based Dyre expression, emphasizes the importance of critical metallic volume fraction (f c) for the percolation conduction, as an f c of ~0.645 obtained for the present case, along with evidence for the absence of super-heating.

Effects of Electrical Insulation Breakdown Voltage And Partial Discharge

NASA Astrophysics Data System (ADS)

Bahrim, F. S.; Rahman, N. F. A.; Haris, H. C. M.; Salim, N. A.

2018-03-01

During the last few decades, development of new materials using composite materials has been of much interest. The Cross-linked Polyethylene (XLPE) which is insulated power cables has been widely used. This paper describes the theoretical analysis, fundamental experiments and application experiments for the XLPE cable insulation. The composite that has been tested is a commercial XLPE and Polypropylene with 30% fiber glass. The results of breakdown strength and partial discharge (PD) behavior described the insulating performance of the composite.

Evidence for a Finite-Temperature Insulator.

PubMed

Ovadia, M; Kalok, D; Tamir, I; Mitra, S; Sacépé, B; Shahar, D

2015-08-27

In superconductors the zero-resistance current-flow is protected from dissipation at finite temperatures (T) by virtue of the short-circuit condition maintained by the electrons that remain in the condensed state. The recently suggested finite-T insulator and the "superinsulating" phase are different because any residual mechanism of conduction will eventually become dominant as the finite-T insulator sets-in. If the residual conduction is small it may be possible to observe the transition to these intriguing states. We show that the conductivity of the high magnetic-field insulator terminating superconductivity in amorphous indium-oxide exhibits an abrupt drop, and seem to approach a zero conductance at T < 0.04 K. We discuss our results in the light of theories that lead to a finite-T insulator.

Degradation diagnosis of transformer insulating oils with terahertz time-domain spectroscopy

NASA Astrophysics Data System (ADS)

Kang, Seung Beom; Kim, Won-Seok; Chung, Dong Chul; Joung, Jong Man; Kwak, Min Hwan

2017-12-01

We report the frequency-dependent complex optical constants, refractive index and absorption, and complex dielectric properties over the frequency range from 0.2 to 3.0 THz for aged power transformer mineral insulating oils. These results have been obtained using terahertz time-domain spectroscopy (THz-TDS) and demonstrate the double-Debye relaxation behavior of the mineral insulating oil. The measured complex optical and dielectric characteristics can be important benchmarks for liquid molecular dynamics and theoretical studies of insulating oils. Due to clear differences in THz responses of aged mineral insulating oils, THz-TDS can be used as a novel on-site diagnostic technique to monitor the insulation condition in aged power transformers and may be valuable alternative to characterize other developing eco-friendly insulating oils and industrial liquids.

Scalable hydrothermal synthesis of free-standing VO₂ nanowires in the M1 phase.

PubMed

Horrocks, Gregory A; Singh, Sujay; Likely, Maliek F; Sambandamurthy, G; Banerjee, Sarbajit

2014-09-24

VO2 nanostructures derived from solution-phase methods are often plagued by broadened and relatively diminished metal-insulator transitions and adventitious doping due to imperfect control of stoichiometry. Here, we demonstrate a stepwise scalable hydrothermal and annealing route for obtaining VO2 nanowires exhibiting almost 4 orders of magnitude abrupt (within 1 °C) metal-insulator transitions. The prepared nanowires have been characterized across their structural and electronic phase transitions using single-nanowire Raman microprobe analysis, ensemble differential scanning calorimetry, and single-nanowire electrical transport measurements. The electrical band gap is determined to be 600 meV and is consistent with the optical band gap of VO2, and the narrowness of differential scanning calorimetry profiles indicates homogeneity of stoichiometry. The preparation of high-quality free-standing nanowires exhibiting pronounced metal-insulator transitions by a solution-phase process allows for scalability, further solution-phase processing, incorporation within nanocomposites, and integration onto arbitrary substrates.

Self-organized pseudo-graphene on grain boundaries in topological band insulators

NASA Astrophysics Data System (ADS)

Slager, Robert-Jan; Juričić, Vladimir; Lahtinen, Ville; Zaanen, Jan

2016-06-01

Semimetals are characterized by nodal band structures that give rise to exotic electronic properties. The stability of Dirac semimetals, such as graphene in two spatial dimensions, requires the presence of lattice symmetries, while akin to the surface states of topological band insulators, Weyl semimetals in three spatial dimensions are protected by band topology. Here we show that in the bulk of topological band insulators, self-organized topologically protected semimetals can emerge along a grain boundary, a ubiquitous extended lattice defect in any crystalline material. In addition to experimentally accessible electronic transport measurements, these states exhibit a valley anomaly in two dimensions influencing edge spin transport, whereas in three dimensions they appear as graphenelike states that may exhibit an odd-integer quantum Hall effect. The general mechanism underlying these semimetals—the hybridization of spinon modes bound to the grain boundary—suggests that topological semimetals can emerge in any topological material where lattice dislocations bind localized topological modes.

Negative thermal expansion near two structural quantum phase transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Occhialini, Connor A.; Handunkanda, Sahan U.; Said, Ayman

Recent experimental work has revealed that the unusually strong, isotropic structural negative thermal expansion in cubic perovskite ionic insulator ScF3 occurs in excited states above a ground state tuned very near a structural quantum phase transition, posing a question of fundamental interest as to whether this special circumstance is related to the anomalous behavior. To test this hypothesis, we report an elastic and inelastic x-ray scattering study of a second system Hg2I2 also tuned near a structural quantum phase transition while retaining stoichiometric composition and high crystallinity. We find similar behavior and significant negative thermal expansion below 100 K formore » dimensions along the body-centered-tetragonal c axis, bolstering the connection between negative thermal expansion and zero-temperature structural transitions.We identify the common traits between these systems and propose a set of materials design principles that can guide discovery of newmaterials exhibiting negative thermal expansion« less

Negative thermal expansion near two structural quantum phase transitions

NASA Astrophysics Data System (ADS)

Occhialini, Connor A.; Handunkanda, Sahan U.; Said, Ayman; Trivedi, Sudhir; Guzmán-Verri, G. G.; Hancock, Jason N.

2017-12-01

Recent experimental work has revealed that the unusually strong, isotropic structural negative thermal expansion in cubic perovskite ionic insulator ScF3 occurs in excited states above a ground state tuned very near a structural quantum phase transition, posing a question of fundamental interest as to whether this special circumstance is related to the anomalous behavior. To test this hypothesis, we report an elastic and inelastic x-ray scattering study of a second system Hg2I2 also tuned near a structural quantum phase transition while retaining stoichiometric composition and high crystallinity. We find similar behavior and significant negative thermal expansion below 100 K for dimensions along the body-centered-tetragonal c axis, bolstering the connection between negative thermal expansion and zero-temperature structural transitions. We identify the common traits between these systems and propose a set of materials design principles that can guide discovery of new materials exhibiting negative thermal expansion.

Arsenolite: a quasi-hydrostatic solid pressure-transmitting medium.

PubMed

Sans, J A; Manjón, F J; Popescu, C; Muñoz, A; Rodríguez-Hernández, P; Jordá, J L; Rey, F

2016-11-30

This study reports the experimental characterization of the hydrostatic properties of arsenolite (As4O6), a molecular solid which is one of the softest minerals in the absence of hydrogen bonding. The high compressibility of arsenolite and its stability up to 15 GPa have been proved by x-ray diffraction measurements, and the progressive loss of hydrostaticity with increasing pressure up to 20 GPa has been monitored by ruby photoluminescence. Arsenolite has been found to exhibit hydrostatic behavior up to 2.5 GPa and a quasi-hydrostatic behavior up to 10 GPa at room temperature. This result opens the way to explore other molecular solids as possible quasi-hydrostatic pressure-transmitting media. The validity of arsenolite as an insulating, stable, non-penetrating and quasi-hydrostatic medium is explored by the study of the x-ray diffraction of zeolite ITQ-29 at high pressure.

Information measures for a local quantum phase transition: Lattice fermions in a one-dimensional harmonic trap

NASA Astrophysics Data System (ADS)

Zhang, Yicheng; Vidmar, Lev; Rigol, Marcos

2018-02-01

We use quantum information measures to study the local quantum phase transition that occurs for trapped spinless fermions in one-dimensional lattices. We focus on the case of a harmonic confinement. The transition occurs upon increasing the characteristic density and results in the formation of a band-insulating domain in the center of the trap. We show that the ground-state bipartite entanglement entropy can be used as an order parameter to characterize this local quantum phase transition. We also study excited eigenstates by calculating the average von Neumann and second Renyi eigenstate entanglement entropies, and compare the results with the thermodynamic entropy and the mutual information of thermal states at the same energy density. While at low temperatures we observe a linear increase of the thermodynamic entropy with temperature at all characteristic densities, the average eigenstate entanglement entropies exhibit a strikingly different behavior as functions of temperature below and above the transition. They are linear in temperature below the transition but exhibit activated behavior above it. Hence, at nonvanishing energy densities above the ground state, the average eigenstate entanglement entropies carry fingerprints of the local quantum phase transition.

Linear magneto-resistance in Bi{sub 2}SeTe{sub 2} topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaladass, E. P., E-mail: edward@igcar.gov.in; Sharma, Shilpam; Devidas, T. R.

2016-05-23

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi{sub 2}SeTe{sub 2} topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5 T 5 T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200 K), a parabolic MR is observed. Temperaturemore » dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.« less

Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2.

PubMed

Moon, Byoung Hee; Bae, Jung Jun; Joo, Min-Kyu; Choi, Homin; Han, Gang Hee; Lim, Hanjo; Lee, Young Hee

2018-05-24

Quantum localization-delocalization of carriers are well described by either carrier-carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS 2 due to a dominating disorder.

Electrophoretic-like gating used to control metal-insulator transitions in electronically phase separated manganite wires.

PubMed

Guo, Hangwen; Noh, Joo H; Dong, Shuai; Rack, Philip D; Gai, Zheng; Xu, Xiaoshan; Dagotto, Elbio; Shen, Jian; Ward, T Zac

2013-08-14

Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.

High-efficiency thermal switch based on topological Josephson junctions

NASA Astrophysics Data System (ADS)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb x Bi 2 Se 3 via penetration depth measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smylie, M. P.; Claus, H.; Welp, U.

2016-11-01

The low-temperature variation of the London penetration depth lambda(T) in the candidate topological superconductor NbxBi2Se3 (x = 0.25) is reported for several crystals. The measurements were carried out by means of a tunnel-diode oscillator technique in both field orientations (H-rf || c and H-rf || ab planes). All samples exhibited power-law behavior at low temperatures (Delta lambda similar to T-2) clearly indicating the presence of point nodes in the superconducting order parameter. The results presented here are consistent with a nematic odd-parity spin-triplet E-u pairing state in NbxBi2Se3.

The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2014-08-18

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

Analysis of antioxidants in insulation cladding of copper wire: a comparison of different mass spectrometric techniques (ESI-IT, MALDI-RTOF and RTOF-SIMS).

PubMed

Schnöller, Johannes; Pittenauer, Ernst; Hutter, Herbert; Allmaier, Günter

2009-12-01

Commercial copper wire and its polymer insulation cladding was investigated for the presence of three synthetic antioxidants (ADK STAB AO412S, Irganox 1010 and Irganox MD 1024) by three different mass spectrometric techniques including electrospray ionization-ion trap-mass spectrometry (ESI-IT-MS), matrix-assisted laser desorption/ionization reflectron time-of-flight (TOF) mass spectrometry (MALDI-RTOF-MS) and reflectron TOF secondary ion mass spectrometry (RTOF-SIMS). The samples were analyzed either directly without any treatment (RTOF-SIMS) or after a simple liquid/liquid extraction step (ESI-IT-MS, MALDI-RTOF-MS and RTOF-SIMS). Direct analysis of the copper wire itself or of the insulation cladding by RTOF-SIMS allowed the detection of at least two of the three antioxidants but at rather low sensitivity as molecular radical cations and with fairly strong fragmentation (due to the highly energetic ion beam of the primary ion gun). ESI-IT- and MALDI-RTOF-MS-generated abundant protonated and/or cationized molecules (ammoniated or sodiated) from the liquid/liquid extract. Only ESI-IT-MS allowed simultaneous detection of all three analytes in the extract of insulation claddings. The latter two so-called 'soft' desorption/ionization techniques exhibited intense fragmentation only by applying low-energy collision-induced dissociation (CID) tandem MS on a multistage ion trap-instrument and high-energy CID on a tandem TOF-instrument (TOF/RTOF), respectively. Strong differences in the fragmentation behavior of the three analytes could be observed between the different CID spectra obtained from either the IT-instrument (collision energy in the very low eV range) or the TOF/RTOF-instrument (collision energy 20 keV), but both delivered important structural information. Copyright 2009 John Wiley & Sons, Ltd.

Unconventional Josephson effect in hybrid superconductor-topological insulator devices.

PubMed

Williams, J R; Bestwick, A J; Gallagher, P; Hong, Seung Sae; Cui, Y; Bleich, Andrew S; Analytis, J G; Fisher, I R; Goldhaber-Gordon, D

2012-08-03

We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.

Critical behavior at a dynamic vortex insulator-to-metal transition

DOE PAGES

Poccia, Nicola; Baturina, Tatyana I.; Coneri, Francesco; ...

2015-09-10

An array of superconducting islands placed on a normal metal film offers a tunable realization of nanopatterned superconductivity. This system enables elucidating open questions concerning the nature of competing vortex states and phase transitions between them. A square array creates the egg crate potential in which magnetic field-induced vortices are frozen into a vortex insulator. We observe a vortex insulator-to-vortex metal transition driven by the applied electric current and determine critical exponents strikingly coinciding with those for thermodynamic liquid-gas transition. Lastly, our findings offer a comprehensive description of dynamic critical behavior and establish a deep connection between equilibrium and nonequilibriummore » phase transitions.« less

Critical behavior at a dynamic vortex insulator-to-metal transition.

PubMed

Poccia, Nicola; Baturina, Tatyana I; Coneri, Francesco; Molenaar, Cor G; Wang, X Renshaw; Bianconi, Ginestra; Brinkman, Alexander; Hilgenkamp, Hans; Golubov, Alexander A; Vinokur, Valerii M

2015-09-11

An array of superconducting islands placed on a normal metal film offers a tunable realization of nanopatterned superconductivity. This system enables investigation of the nature of competing vortex states and phase transitions between them. A square array creates the eggcrate potential in which magnetic field-induced vortices are frozen into a vortex insulator. We observed a vortex insulator-vortex metal transition driven by the applied electric current and determined critical exponents that coincided with those for thermodynamic liquid-gas transition. Our findings offer a comprehensive description of dynamic critical behavior and establish a deep connection between equilibrium and nonequilibrium phase transitions. Copyright © 2015, American Association for the Advancement of Science.

Concerning the sound insulation of building elements made up of light concretes. [acoustic absorption efficiency calculations

NASA Technical Reports Server (NTRS)

Giurgiu, I. I.

1974-01-01

The sound insulating capacity of building elements made up of light concretes is considered. Analyzing differentially the behavior of light concrete building elements under the influence of incident acoustic energy and on the basis of experimental measurements, coefficients of correction are introduced into the basic formulas for calculating the sound insulating capacity for the 100-3,2000 Hz frequency band.

A Mott insulator continuously connected to iron pnictide superconductors

DOE PAGES

Song, Yu; Yamani, Zahra; Cao, Chongde; ...

2016-12-19

Iron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal state, which has been interpreted as originating from a proximate Mott transition. Whether an actual Mott insulator can be realized in the phase diagram of the iron pnictides remains an open question. Here we use transport, transmission electron microscopy, X-ray absorption spectroscopy, resonant inelastic X-ray scattering and neutron scattering to demonstrate that NaFe 1-xCu xAs near x≈0.5 exhibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behaviour persisting above the Néel temperature, indicative of a Mott insulator. On decreasing x from 0.5,more » the antiferromagnetic-ordered moment continuously decreases, yielding to superconductivity ~x=0.05. Our discovery of a Mott-insulating state in NaFe 1-xCu xAs thus makes it the only known Fe-based material, in which superconductivity can be smoothly connected to the Mott-insulating state, highlighting the important role of electron correlations in the high-T c superconductivity.« less

A Mott insulator continuously connected to iron pnictide superconductors

PubMed Central

Song, Yu; Yamani, Zahra; Cao, Chongde; Li, Yu; Zhang, Chenglin; Chen, Justin S.; Huang, Qingzhen; Wu, Hui; Tao, Jing; Zhu, Yimei; Tian, Wei; Chi, Songxue; Cao, Huibo; Huang, Yao-Bo; Dantz, Marcus; Schmitt, Thorsten; Yu, Rong; Nevidomskyy, Andriy H.; Morosan, Emilia; Si, Qimiao; Dai, Pengcheng

2016-01-01

Iron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal state, which has been interpreted as originating from a proximate Mott transition. Whether an actual Mott insulator can be realized in the phase diagram of the iron pnictides remains an open question. Here we use transport, transmission electron microscopy, X-ray absorption spectroscopy, resonant inelastic X-ray scattering and neutron scattering to demonstrate that NaFe1−xCuxAs near x≈0.5 exhibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behaviour persisting above the Néel temperature, indicative of a Mott insulator. On decreasing x from 0.5, the antiferromagnetic-ordered moment continuously decreases, yielding to superconductivity ∼x=0.05. Our discovery of a Mott-insulating state in NaFe1−xCuxAs thus makes it the only known Fe-based material, in which superconductivity can be smoothly connected to the Mott-insulating state, highlighting the important role of electron correlations in the high-Tc superconductivity. PMID:27991514

Sharp improvement of flashover strength from composite micro-textured surfaces

NASA Astrophysics Data System (ADS)

Huo, Yankun; Liu, Wenyuan; Ke, Changfeng; Chang, Chao; Chen, Changhua

2017-09-01

A composite micro-textured surface structure is proposed and demonstrated to enhance the surface flashover strength of polymer insulators used in vacuum. The structure is fabricated in two stages, with periodic triangular grooves of approximately 210 μm in width formed in the first stage and micro-holes of approximately 2 μm coated on the inner surface of grooves in the second. The aim is to exploit the synergistic effects between the grooves and micro-holes to suppress the secondary electron yield to obtain a better flashover performance. To acquire insulators with the composite micro-textured surface, the CO2 laser processing technique is applied to treat the surface of the PMMA insulators. The test results show that the flashover voltages of the insulators with the two-stage fabricated structure increase by 150% compared with the untreated samples in the best state. Compared with the traditional macro-groove structures on insulators, the proposed composite micro-textured insulators exhibit a better surface flashover performance.

Thermally insulating and fire-retardant lightweight anisotropic foams based on nanocellulose and graphene oxide.

PubMed

Wicklein, Bernd; Kocjan, Andraž; Salazar-Alvarez, German; Carosio, Federico; Camino, Giovanni; Antonietti, Markus; Bergström, Lennart

2015-03-01

High-performance thermally insulating materials from renewable resources are needed to improve the energy efficiency of buildings. Traditional fossil-fuel-derived insulation materials such as expanded polystyrene and polyurethane have thermal conductivities that are too high for retrofitting or for building new, surface-efficient passive houses. Tailored materials such as aerogels and vacuum insulating panels are fragile and susceptible to perforation. Here, we show that freeze-casting suspensions of cellulose nanofibres, graphene oxide and sepiolite nanorods produces super-insulating, fire-retardant and strong anisotropic foams that perform better than traditional polymer-based insulating materials. The foams are ultralight, show excellent combustion resistance and exhibit a thermal conductivity of 15 mW m(-1) K(-1), which is about half that of expanded polystyrene. At 30 °C and 85% relative humidity, the foams retained more than half of their initial strength. Our results show that nanoscale engineering is a promising strategy for producing foams with excellent properties using cellulose and other renewable nanosized fibrous materials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yu; Yamani, Zahra; Cao, Chongde

Iron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal state, which has been interpreted as originating from a proximate Mott transition. Whether an actual Mott insulator can be realized in the phase diagram of the iron pnictides remains an open question. Here we use transport, transmission electron microscopy, X-ray absorption spectroscopy, resonant inelastic X-ray scattering and neutron scattering to demonstrate that NaFe 1-xCu xAs near x≈0.5 exhibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behaviour persisting above the Néel temperature, indicative of a Mott insulator. On decreasing x from 0.5,more » the antiferromagnetic-ordered moment continuously decreases, yielding to superconductivity ~x=0.05. Our discovery of a Mott-insulating state in NaFe 1-xCu xAs thus makes it the only known Fe-based material, in which superconductivity can be smoothly connected to the Mott-insulating state, highlighting the important role of electron correlations in the high-T c superconductivity.« less

Prediction of a Large-Gap and Switchable Kane-Mele Quantum Spin Hall Insulator

NASA Astrophysics Data System (ADS)

Marrazzo, Antimo; Gibertini, Marco; Campi, Davide; Mounet, Nicolas; Marzari, Nicola

2018-03-01

Fundamental research and technological applications of topological insulators are hindered by the rarity of materials exhibiting a robust topologically nontrivial phase, especially in two dimensions. Here, by means of extensive first-principles calculations, we propose a novel quantum spin Hall insulator with a sizable band gap of ˜0.5 eV that is a monolayer of jacutingaite, a naturally occurring layered mineral first discovered in 2008 in Brazil and recently synthesized. This system realizes the paradigmatic Kane-Mele model for quantum spin Hall insulators in a potentially exfoliable two-dimensional monolayer, with helical edge states that are robust and that can be manipulated exploiting a unique strong interplay between spin-orbit coupling, crystal-symmetry breaking, and dielectric response.

The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model

NASA Technical Reports Server (NTRS)

Kazior, T. E.; Lagowski, J.; Gatos, H. C.

1983-01-01

The relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C-V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.

DC breakdown characteristics of silicone polymer composites for HVDC insulator applications

NASA Astrophysics Data System (ADS)

Han, Byung-Jo; Seo, In-Jin; Seong, Jae-Kyu; Hwang, Young-Ho; Yang, Hai-Won

2015-11-01

Critical components for HVDC transmission systems are polymer insulators, which have stricter requirements that are more difficult to achieve compared to those of HVAC insulators. In this study, we investigated the optimal design of HVDC polymer insulators by using a DC electric field analysis and experiments. The physical properties of the polymer specimens were analyzed to develop an optimal HVDC polymer material, and four polymer specimens were prepared for DC breakdown experiments. Single and reverse polarity breakdown tests were conducted to analyze the effect of temperature on the breakdown strength of the polymer. In addition, electric fields were analyzed via simulations, in which a small-scale polymer insulator model was applied to prevent dielectric breakdown due to electric field concentration, with four DC operating conditions taken into consideration. The experimental results show that the electrical breakdown strength and the electric field distribution exhibit significant differences in relation to different DC polarity transition procedures.

Thermal Testing and Analysis of an Efficient High-Temperature Multi-Screen Internal Insulation

NASA Technical Reports Server (NTRS)

Weiland, Stefan; Handrick, Karin; Daryabeigi, Kamran

2007-01-01

Conventional multi-layer insulations exhibit excellent insulation performance but they are limited to the temperature range to which their components reflective foils and spacer materials are compatible. For high temperature applications, the internal multi-screen insulation IMI has been developed that utilizes unique ceramic material technology to produce reflective screens with high temperature stability. For analytical insulation sizing a parametric material model is developed that includes the main contributors for heat flow which are radiation and conduction. The adaptation of model-parameters based on effective steady-state thermal conductivity measurements performed at NASA Langley Research Center (LaRC) allows for extrapolation to arbitrary stack configurations and temperature ranges beyond the ones that were covered in the conductivity measurements. Experimental validation of the parametric material model was performed during the thermal qualification test of the X-38 Chin-panel, where test results and predictions showed a good agreement.

Chern Insulator Phase in a Lattice of an Organic Dirac Semimetal with Intracellular Potential and Magnetic Modulations

NASA Astrophysics Data System (ADS)

Osada, Toshihito

2017-12-01

We demonstrate that a Chern insulator can be realized on an actual two-dimensional lattice of an organic Dirac semimetal, α-(BEDT-TTF)2I3, by introducing potential and magnetic modulations in a unit cell. It is a topologically-nontrivial insulator that exhibits the quantum Hall effect even at zero magnetic field. We assume a pattern of site potential and staggered plaquette magnetic flux on the lattice to imitate the observed stripe charge ordering pattern. When magnetic modulation is sufficiently large, the system becomes a Chern insulator, where the Berry curvatures around two gapped Dirac cones have the same sign on each band, and one chiral edge state connects the conduction and valence bands at each crystal edge. The present model is an organic version of Haldane's model, which discusses the Chern insulator on a honeycomb lattice with second nearest neighbor couplings.

Durability of foam insulation for LH2 fuel tanks of future subsonic transports

NASA Technical Reports Server (NTRS)

Sharpe, E. L.; Helenbrook, R. G.

1978-01-01

In connection with the potential short-supply of petroleum based fuels, NASA has initiated investigations concerning the feasibility of aircraft using as fuel hydrogen which is to be stored in liquid form. One of the problems to be solved for an operation of such aircraft is related to the possibility of a suitable storage of the liquid hydrogen. A description is presented of an experimental study regarding the suitability of commercially available organic foams as cryogenic insulation for liquid hydrogen tanks under extensive thermal cycling typical of subsonic airline type operation. Fourteen commercially available organic foam insulations were tested. The thermal performance of all insulations was found to deteriorate with increased simulated flight cycles. Two unreinforced polyurethane foams survived over 4200 thermal cycles (representative of approximately 15 years of airline service) without evidence of structural deterioration. The polyurethane foam insulations also exhibited excellent thermal performance.

Superconductivity in the graphene monolayer calculated using the Kubo formulalism

NASA Astrophysics Data System (ADS)

Lima, L. S.

2018-03-01

We have employed the massless Dirac's fermions formalism together with the Kubo's linear response theory to study the transport by electrons in the graphene monolayer. We have calculated the electric conductivity and verified the behavior of the AC and DC electric conductivities of the system that is known to be a relativistic electron plasma. Our results show a superconductor behavior to the electron transport and consequently the spin transport for all values of T > 0 and a behavior of the AC conductivity tending to infinity in the limit ω → 0. In T = 0 our results show an insulator behavior with a transition from a superconductor state at T > 0 to an insulator state at T = 0 .

Molten thermoplastic dripping behavior induced by flame spread over wire insulation under overload currents.

PubMed

He, Hao; Zhang, Qixing; Tu, Ran; Zhao, Luyao; Liu, Jia; Zhang, Yongming

2016-12-15

The dripping behavior of the molten thermoplastic insulation of copper wire, induced by flame spread under overload currents, was investigated for a better understanding of energized electrical wire fires. Three types of sample wire, with the same polyethylene insulation thickness and different core diameters, were used in this study. First, overload current effects on the transient one-dimensional wire temperature profile were predicted using simplified theoretical analysis; the heating process and equilibrium temperature were obtained. Second, experiments on the melting characteristics were conducted in a laboratory environment, including drop formation and frequency, falling speed, and combustion on the steel base. Third, a relationship between molten mass loss and volume variation was proposed to evaluate the dripping time and frequency. A strong current was a prerequisite for the wire dripping behavior and the averaged dripping frequency was found to be proportional to the square of the current based on the theoretical and experimental results. Finally, the influence of dripping behavior on the flame propagation along the energized electrical wire was discussed. The flame width, bright flame height and flame spreading velocity presented different behaviors. Copyright © 2016 Elsevier B.V. All rights reserved.

Magnetic Excitations across the Metal-Insulator Transition in the Pyrochlore Iridate Eu2Ir2O7

NASA Astrophysics Data System (ADS)

Chun, Sae Hwan; Yuan, Bo; Casa, Diego; Kim, Jungho; Kim, Chang-Yong; Tian, Zhaoming; Qiu, Yang; Nakatsuji, Satoru; Kim, Young-June

2018-04-01

We report a resonant inelastic x-ray scattering study of the magnetic excitation spectrum in a highly insulating Eu2 Ir2 O7 single crystal that exhibits a metal-insulator transition at TMI=111 (7 ) K . A propagating magnon mode with a 20 meV bandwidth and a 28 meV magnon gap is found in the excitation spectrum at 7 K, which is expected in the all-in-all-out magnetically ordered state. This magnetic excitation exhibits substantial softening as the temperature is raised towards TMI and turns into a highly damped excitation in the paramagnetic phase. Remarkably, the softening occurs throughout the whole Brillouin zone including the zone boundary. This observation is inconsistent with the magnon renormalization expected in a local moment system and indicates that the strength of the electron correlation in Eu2 Ir2 O7 is only moderate, so that electron itinerancy should be taken into account in describing its magnetism.

Quantized transport and steady states of Floquet topological insulators

NASA Astrophysics Data System (ADS)

Esin, Iliya; Rudner, Mark S.; Refael, Gil; Lindner, Netanel H.

2018-06-01

Robust electronic edge or surface modes play key roles in the fascinating quantized responses exhibited by topological materials. Even in trivial materials, topological bands and edge states can be induced dynamically by a time-periodic drive. Such Floquet topological insulators (FTIs) inherently exist out of equilibrium; the extent to which they can host quantized transport, which depends on the steady-state population of their dynamically induced edge states, remains a crucial question. In this work, we obtain the steady states of two-dimensional FTIs in the presence of the natural dissipation mechanisms present in solid state systems. We give conditions under which the steady-state distribution resembles that of a topological insulator in the Floquet basis. In this state, the distribution in the Floquet edge modes exhibits a sharp feature akin to a Fermi level, while the bulk hosts a small density of excitations. We determine the regimes where topological edge-state transport persists and can be observed in FTIs.

Two-dimensional topological crystalline insulator phase in Sb/Bi planar honeycomb with tunable Dirac gap

DOE PAGES

Hsu, Chia -Hsiu; Huang, Zhi -Quan; Crisostomo, Christian P.; ...

2016-01-14

We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing themore » Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. As a result, the Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of the-plane electric field, providing controllable gating of edge state important for device applications.« less

Strongly correlated superconductivity and quantum criticality

NASA Astrophysics Data System (ADS)

Tremblay, A.-M. S.

Doped Mott insulators and doped charge-transfer insulators describe classes of materials that can exhibit unconventional superconducting ground states. Examples include the cuprates and the layered organic superconductors of the BEDT family. I present results obtained from plaquette cellular dynamical mean-field theory. Continuous-time quantum Monte Carlo evaluation of the hybridization expansion allows one to study the models in the large interaction limit where quasiparticles can disappear. The normal state which is unstable to the superconducting state exhibits a first-order transition between a pseudogap and a correlated metal phase. That transition is the finite-doping extension of the metal-insulator transition obtained at half-filling. This transition serves as an organizing principle for the normal and superconducting states of both cuprates and doped organic superconductors. In the less strongly correlated limit, these methods also describe the more conventional case where the superconducting dome surrounds an antiferromagnetic quantum critical point. Sponsored by NSERC RGPIN-2014-04584, CIFAR, Research Chair in the Theory of Quantum Materials.

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm{sup 2}/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V{sub O}) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recoverymore » in turn-on voltage indicates that the dense V{sub O} in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.« less

Unsteady Heat Transfer Behavior of Reinforced Concrete Wall of Cold Storage

NASA Astrophysics Data System (ADS)

Nomura, Tomohiro; Murakami, Yuji; Uchikawa, Motoyuki

The authors had already clarified that the heat transfer behaviors between internal and external insulated reinforced concrete wall of cold storage are different each others when inside and outside temperature of wall is flactuating. From that conclusion, we must consider the application method of wall insulation of cold storages in actual design. The theme of the paper is to get the analyzing method and unsteady heat transfer characteristics of concrete walls of cold storage during daily variation of outside temperature of walls, and to give the basis for efficient design and cost optimization of insulate wall of cold storage. The difference of unsteady heat transfer characteristics between internal and external insulate wall, when outside temperature of the wall follewed daily varation, was clarified in experiment and in situ measurement of practical cold storage. The analyzing method with two dimentional unsteady FEM was introduced. Using this method, it is possible to obtain the time variation of heat flux, which is important basic factor for practical design of cold storage, through the wall.

Changes in the electronic structure and spin dynamics across the metal-insulator transition in LaLa 1-xSr xCoO 3

DOE PAGES

Smith, R. X.; Hoch, M. J. R.; Moulton, W. G.; ...

2016-01-25

The magnetoelectronic properties of La 1-xSr xCoO 3, which include giant magnetoresistance, are strongly dependent on the level of hole doping. The system evolves, with increasing x, from a spin glass insulator to a metallic ferromagnet with a metal-insulator (MI) transition at x C ~ 0.18. Nanoscale phase separation occurs in the insulating phase and persists, to some extent, into the just-metallic phase. The present experiments at 4.2 K have used 139La NMR to investigate the transition from hopping dynamics for x < x C to Korringa-like ferromagnetic metal behavior for x > x C. A marked decrease in themore » spin-lattice relaxation rate is found in the vicinity of x C as the MI transition is crossed. Lastly, this behavior is accounted for in terms of the evolution of the electronic structure and dynamics with cluster size.« less

Thickness-dependent carrier and phonon dynamics of topological insulator Bi2Te3 thin films.

PubMed

Zhao, Jie; Xu, Zhongjie; Zang, Yunyi; Gong, Yan; Zheng, Xin; He, Ke; Cheng, Xiang'ai; Jiang, Tian

2017-06-26

As a new quantum state of matter, topological insulators offer a new platform for exploring new physics, giving rise to fascinating new phenomena and new devices. Lots of novel physical properties of topological insulators have been studied extensively and are attributed to the unique electron-phonon interactions at the surface. Although electron behavior in topological insulators has been studied in detail, electron-phonon interactions at the surface of topological insulators are less understood. In this work, using optical pump-optical probe technology, we performed transient absorbance measurement on Bi 2 Te 3 thin films to study the dynamics of its hot carrier relaxation process and coherent phonon behavior. The excitation and dynamics of phonon modes are observed with a response dependent on the thickness of the samples. The thickness-dependent characteristic time, amplitude and frequency of the damped oscillating signals are acquired by fitting the signal profiles. The results clearly indicate that the electron-hole recombination process gradually become dominant with the increasing thickness which is consistent with our theoretical calculation. In addition, a frequency modulation phenomenon on the high-frequency oscillation signals induced by coherent optical phonons is observed.

Superconductive microstrip exhibiting negative differential resistivity

DOEpatents

Huebener, R.P.; Gallus, D.E.

1975-10-28

A device capable of exhibiting negative differential electrical resistivity over a range of values of current and voltage is formed by vapor- depositing a thin layer of a material capable of exhibiting superconductivity on an insulating substrate, establishing electrical connections at opposite ends of the deposited strip, and cooling the alloy into its superconducting range. The device will exhibit negative differential resistivity when biased in the current- induced resistive state.

Memristive Ion Channel-Doped Biomembranes as Synaptic Mimics.

PubMed

Najem, Joseph S; Taylor, Graham J; Weiss, Ryan J; Hasan, Md Sakib; Rose, Garrett; Schuman, Catherine D; Belianinov, Alex; Collier, C Patrick; Sarles, Stephen A

2018-05-22

Solid-state neuromorphic systems based on transistors or memristors have yet to achieve the interconnectivity, performance, and energy efficiency of the brain due to excessive noise, undesirable material properties, and nonbiological switching mechanisms. Here we demonstrate that an alamethicin-doped, synthetic biomembrane exhibits memristive behavior, emulates key synaptic functions including paired-pulse facilitation and depression, and enables learning and computing. Unlike state-of-the-art devices, our two-terminal, biomolecular memristor features similar structure (biomembrane), switching mechanism (ion channels), and ionic transport modality as biological synapses while operating at considerably lower power. The reversible and volatile voltage-driven insertion of alamethicin peptides into an insulating lipid bilayer creates conductive pathways that exhibit pinched current-voltage hysteresis at potentials above their insertion threshold. Moreover, the synapse-like dynamic properties of the biomolecular memristor allow for simplified learning circuit implementations. Low-power memristive devices based on stimuli-responsive biomolecules represent a major advance toward implementation of full synaptic functionality in neuromorphic hardware.

Measurements of the temperature dependence of radiation induced conductivity in polymeric dielectrics

NASA Astrophysics Data System (ADS)

Gillespie, Jodie

This study measures Radiation Induced Conductivity (RIC) in five insulating polymeric materials over temperatures ranging from ~110 K to ~350 K: polyimide (PI or Kapton HN(TM) and Kapton E(TM)), polytetraflouroethylene (PTFE or Teflon(TM)), ethylene-tetraflouroethylene (ETFE or Tefzel(TM)), and Low Density Polyethylene (LDPE). RIC occurs when incident ionizing radiation deposits energy and excites electrons into the conduction band of insulators. Conductivity was measured when a voltage was applied across vacuum-baked, thin film polymer samples in a parallel plate geometry. RIC was calculated as the difference in sample conductivity under no incident radiation and under an incident ~4 MeV electron beam at low incident dose rates of 0.01 rad/sec to 10 rad/sec. The steady-state RIC was found to agree well with the standard power law relation, sigmaRIC(D˙) = kRIC(T) D˙Delta(T) between conductivity, sigmaRIC and adsorbed dose rate, D˙. Both the proportionality constant, kRIC, and the power, Delta, were found to be temperature-dependent above ~250 K, with behavior consistent with photoconductivity models developed for localized trap states in disordered semiconductors. Below ~250 K, kRIC and Delta exhibited little change in any of the materials.

Development of polyisocyanurate pour foam formulation for space shuttle external tank thermal protection system. Final technical report, March 1986-October 1987

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, J.A.; Butler, J.M.; Chartoff, R.P.

1988-08-01

Four commercially available polyisocyanurate polyurethane spray-foam insulation formulations are used to coat the external tank of the space shuttle. There are several problems associated with these formulations. For example, some do not perform well as pourable closeout/repair systems. Some do not perform well at cryogenic temperatures (poor adhesion to aluminum at liquid nitrogen temperatures). Their thermal stability at elevated temperatures is not adequate. A major defect in all the systems is the lack of detailed chemical information. The formulations are simply supplied to NASA and Martin Marietta, the primary contractor, as components; Part A (isocyanate) and Part B (poly(s) andmore » additives). Because of the lack of chemical information the performance behavior data for the current system, NASA sought the development of a non-proprietary room temperature curable foam insulation. Requirements for the developed system were that it should exhibit equal or better thermal stability both at elevated and cryogenic temperatures with better adhesion to aluminum as compared to the current system. Several formulations were developed that met these requirements, i.e., thermal stability, good pourability, and good bonding to aluminum.« less

Atmospheric Pressure Effects on Cryogenic Storage Tank Boil-Off

NASA Technical Reports Server (NTRS)

Sass, J. P.; Frontier, C. R.

2007-01-01

The Cryogenics Test Laboratory (CTL) at the Kennedy Space Center (KSC) routinely utilizes cryostat test hardware to evaluate comparative and absolute thermal conductivities of a wide array of insulation systems. The test method is based on measurement of the flow rate of gas evolved due to evaporative boil-off of a cryogenic liquid. The gas flow rate typically stabilizes after a period of a couple of hours to a couple of days, depending upon the test setup. The stable flow rate value is then used to calculate the thermal conductivity for the insulation system being tested. The latest set of identical cryostats, 1,000-L spherical tanks, exhibited different behavior. On a macro level, the flow rate did stabilize after a couple of days; however the stable flow rate was oscillatory with peak to peak amplitude of up to 25 percent of the nominal value. The period of the oscillation was consistently 12 hours. The source of the oscillation has been traced to variations in atmospheric pressure due to atmospheric tides similar to oceanic tides. This paper will present analysis of this phenomenon, including a calculation that explains why other cryostats are not affected by it.

Strain dependence of the electronic properties of LaTiO3 thin films

NASA Astrophysics Data System (ADS)

Moon, S. J.; Kim, Y. S.

2014-11-01

We report on the transport and the core-level X-ray photoemission spectroscopy data of fully-strained LaTiO3 thin films grown on GdScO3 and SrTiO3 substrates. We observed that LaTiO3 thin film grown on GdScO3 showed insulating behavior but that grown on SrTiO3 exhibited a metallic character. We found that while the La 4 d photoemission spectra of the two films were nearly the same, their Ti 2 p and O 1 s data revealed a difference. Our results suggest that strain-induced changes in the Ti-O bonding play an important role in the electronic properties of LaTiO3 thin films.

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

NASA Astrophysics Data System (ADS)

Sleiman, A.; Rosamond, M. C.; Alba Martin, M.; Ayesh, A.; Al Ghaferi, A.; Gallant, A. J.; Mabrook, M. F.; Zeze, D. A.

2012-01-01

A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (˜9.15 × 1011 cm-2) and demonstrated 94% charge retention due to the superior encapsulation.

Interfacial Ferromagnetism in LaNiO3/CaMnO3 Superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grutter, Alexander J.; Yang, Hao; Kirby, B. J.

2013-08-01

We observe interfacial ferromagnetism in superlattices of the paramagnetic metal LaNiO3 and the antiferromagnetic insulator CaMnO3. LaNiO3 exhibits a thickness dependent metal-insulator transition and we find the emergence of ferromagnetism to be coincident with the conducting state of LaNiO3. That is, only superlattices in which the LaNiO3 layers are metallic exhibit ferromagnetism. Using several magnetic probes, we have determined that the ferromagnetism arises in a single unit cell of CaMnO3 at the interface. Together these results suggest that ferromagnetism can be attributed to a double exchange interaction among Mn ions mediated by the adjacent itinerant metal.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru

The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

Noise Spectroscopy in Strongly Correlated Oxides

NASA Astrophysics Data System (ADS)

Alsaqqa, Ali M.

Strongly correlated materials are an interesting class of materials, thanks to the novel electronic and magnetic phenomena they exhibit as a result of the interplay of various degrees of freedom. This gives rise to an array of potential applications, from Mott-FET to magnetic storage. Many experimental probes have been used to study phase transitions in strongly correlated oxides. Among these, resistance noise spectroscopy, together with conventional transport measurements, provides a unique viewpoint to understand the microscopic dynamics near the phase transitions in these oxides. In this thesis, utilizing noise spectroscopy and transport measurements, four different strongly correlated materials were studied: (1) neodymium nickel oxide (NdNiO 3) ultrathin films, (2) vanadium dioxide (VO2) microribbons, (3) copper vanadium bronze (CuxV2O 5) microribbons and (4) niobium triselenide (NbSe3) microribbons. Ultra thin films of rare-earth nickelates exhibit several temperature-driven phase transitions. In this thesis, we studied the metal-insulator and Neel transitions in a series of NdNiO3 films with different lattice mismatches. Upon colling down, the metal-insulator phase transition is accompanied by a structural (orthorohombic to monoclinic) and magnetic (paramagnetic to antiferromagnetic) transitions as well, making the problem more interesting and complex at the same time. The noise is of the 1/f type and is Gaussian in the high temperature phase, however deviations are seen in the low temperature phases. Below the metal-insulator transition, noise magnitude increases by orders of magnitude: a sign of inhomogeneous electrical conduction as result of phase separation. This is further assured by the non-Gaussian noise signature. At very low temperatures (T < 50 K), the noise behavior switches between Gaussian and non-Gaussian over several hours, possibly arising from dynamically competing ground states. VO2 is one of the most widely studied strongly correlated oxides and is important from the fundamental physics point of view and for applications. Its transition from a metal to an insulator (MIT) with simple application of voltage is quite interesting. For use in applications, e.g. transistors, it is very important to have a clear understanding of the MIT. Equally important is the question of whether the thermally- and electrically-driven transitions have the same origin. In this thesis, we tried to answer this question by utilizing three different tuning parameters: temperature, voltage bias and strain. Our results point to an unusual noise behavior in the high-temperature metallic phase, and provide valuable insight into the transport dynamics of this material. CuxV2O5 exhibit a metal-insulator transition and, more interestingly, a superconductivity transition. Unlike VO2, copper vanadium bronzes are much less studied and many questions are still open, including the possibility of charge ordering transition, just like in other members of the vanadium family. In this thesis, we studied this material and found evidences for charge ordering transitions and possibly other transitions as well. The last material, NbSe3, is a prototypical example of charge density wave systems, where Peierls transitions exist. Here, we study the effects of contacts on resistance noise in the 1D limit. The study aimed to confirm that the electric field threshold is sample length independent, to find out if there is a relation between contact separation and the noise generated and to explore the characteristics of the contact noise. The results confirm that the electric field threshold is independent of the sample length. It was also found that the separation between the contacts does not affect the noise. Finally, the contact noise is of the 1/f-type and has a Gaussian distribution. These results are timely for future device applications utilizing NbSe3.

Thin-Film Power Transformers

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Pourable Foam Insulation

NASA Technical Reports Server (NTRS)

Harvey, James A.; Butler, John M.; Chartoff, Richard P.

1989-01-01

Report describes search for polyisocyanurate/polyurethane foam insulation with superior characteristics. Discusses chemistry of current formulations. Tests of formulations, of individual ingredients and or alternative new formulations described. Search revealed commercially available formulations exhibiting increased thermal stability at temperatures up to 600 degree C, pours readily before curing, presents good appearance after curing, and remains securely bonded to aluminum at cryogenic temperatures. Total of 42 different formulations investigated, 10 found to meet requirements.

Nature of the insulating ground state of the 5d postperovskite CaIrO 3

DOE PAGES

Kim, Sun -Woo; Liu, Chen; Kim, Hyun -Jung; ...

2015-08-26

In this study, the insulating ground state of the 5d transition metal oxide CaIrO 3 has been classified as a Mott-type insulator. Based on a systematic density functional theory (DFT) study with local, semilocal, and hybrid exchange-correlation functionals, we reveal that the Ir t 2g states exhibit large splittings and one-dimensional electronic states along the c axis due to a tetragonal crystal field. Our hybrid DFT calculation adequately describes the antiferromagnetic (AFM) order along the c direction via a superexchange interaction between Ir 4+ spins. Furthermore, the spin-orbit coupling (SOC) hybridizes the t 2g states to open an insulating gap.more » These results indicate that CaIrO 3 can be represented as a spin-orbit Slater insulator, driven by the interplay between a long-range AFM order and the SOC. Such a Slater mechanism for the gap formation is also demonstrated by the DFT + dynamical mean field theory calculation, where the metal-insulator transition and the paramagnetic to AFM phase transition are concomitant with each other.« less

Nuclear location of a chromatin insulator in Drosophila melanogaster.

PubMed

Xu, Qinghao; Li, Mo; Adams, Jessica; Cai, Haini N

2004-03-01

Chromatin-related functions are associated with spatial organization in the nucleus. We have investigated the relationship between the enhancer-blocking activity and subnuclear localization of the Drosophila melanogaster suHw insulator. Using fluorescent in situ hybridization, we observed that genomic loci containing the gypsy retrotransposon were distributed closer to the nuclear periphery than regions without the gypsy retrotransposon. However, transgenes containing a functional 340 bp suHw insulator did not exhibit such biased distribution towards the nuclear periphery, which suggests that the suHw insulator sequence is not responsible for the peripheral localization of the gypsy retrotransposon. Antibody stains showed that the two proteins essential for the suHw insulator activity, SUHW and MOD(MDG4), are not restricted to the nuclear periphery. The enhancer-blocking activity of suHw remained intact under the heat shock conditions, which was shown to disrupt the association of gypsy, SUHW and MOD(MDG4) with the nuclear periphery. Our results indicate that the suHw insulator can function in the nuclear interior, possibly through local interactions with chromatin components or other nuclear structures.

Optical and Terahertz Measurements of Spintronic Materials

NASA Astrophysics Data System (ADS)

Bas, Derek A.

Terahertz time-domain spectroscopy (THz-TDS) is a versatile method to determine lattice, electronic charge and spin dynamics. This dissertation employs THz-TDS to study the spin and charge dynamics in topological insulator and antiferromagnetic systems. Observing time-domain effects on the scale of picoseconds gives unprecedented control over optoelectronic properties. Methods and challenges of THz generation, detection, and transmission are outlined. The wealth of light-matter interactions present in all nonlinear optical experiments are discussed, including primarily optical rectification, shift currents, and injection currents. Each of these gives valuable insight into the carrier dynamics of a material type. Conventional electronics can be improved in their speed and efficiency by taking advantage of an additional degree of freedom- electron spin. Therefore, we consider material types which exhibit great potential to replace common electronic materials while simultaneously employing electron spin for information storage or transport. Antiferromagnets show a type of spin-order that has the ability to store bits without unwanted interactions between neighboring particles. In antiferromagnetic MnF2 which has a Neel temperature of TN = 67 K, THz-TDS is performed on one-magnon and two-magnon resonances in the 0.1-2.3 THz range while varying the temperature from 6 to 295 K. The behavior of the one-magnon resonance is modeled by modified molecular field theory with an additional coupling term j set as a free parameter to fit the data. The resulting best fit value j = 1.1 provides the first experimental evidence indicating that neighboring spins in MnF 2 are only weakly coupled, closely approximating mean-field theory. Time-of-flight analysis was performed on the transmitted THz pulses to measure the temperature-dependent THz refractive index, which was modeled by phonon energy in the T > TN regime and magnetic energy in the T < TN regime. In the range T < 10 K, measured data deviates from this theory, and can be modeled by internal energy from hyperfine interactions, providing the first direct observation of hyperfine interactions in THz spectroscopy. Topological insulators exhibit the ability to transport spin-polarized currents along their surfaces with high mobilities. Phase-related pulses at photon energies 0.8 and 1.6 eV are used to simultaneously inject shift and injection currents into thin-films of the prototypical topological insulator Bi2Se3, and the foundation is laid out for an extensive study of the novel carrier properties in topological surface states. A method of symmetry analysis based on the crystal lattice is developed for isolation and individual study of the surfaceonly shift currents, which are threefold symmetric with equal components parallel and perpendicular to the pump polarization, and bulk/surface injection currents, which are isotropic parallel to the pump polarization and vanishing perpendicular to it. Pump energies can be tuned through the Dirac point, a capability which holds promise for the search of smoking gun evidence for the novel topological insulator surface state behavior that has been theorized.

Study on temperature sensitivity of topological insulators based on long-period fiber grating

NASA Astrophysics Data System (ADS)

Luo, Jianhua; Zhao, Chenghai; Li, Jianbo; He, Mengdong

2017-06-01

Based on a long-period fiber grating, we conducted experimental research on the temperature sensitivity of topological insulators. The long-period fiber grating and topological insulators solution were encapsulated in a capillary tube using UV glue, and the temperature response was measured. Within a range of 35 to 75 centigrade, one resonance dip of a long-period fiber grating exhibits a redshift of 1.536 nm. The temperature sensitivity is about 7.7 times of an ordinary long-period fiber grating's sensitivity (0.005 nm/°C). A numerical simulation is also performed on the basis of the experiments.

Probing the intrinsic charge transport in indacenodithiophene-co-benzothiadiazole thin films

NASA Astrophysics Data System (ADS)

Wang, Wenhe; Tang, Wei; Zhao, Jiaqing; Bao, Bei; Xing, Hui; Guo, Xiaojun; Wang, Shun; Liu, Ying

2017-12-01

Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm2V-1s-1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer.

Mott transition between a spin-liquid insulator and a metal in three dimensions.

PubMed

Podolsky, Daniel; Paramekanti, Arun; Kim, Yong Baek; Senthil, T

2009-05-08

We study a bandwidth controlled Mott metal-insulator transition (MIT) from a Fermi-liquid metal to a quantum spin-liquid insulator in three dimensions. Using a slave rotor approach including gauge fluctuations, we obtain a continuous MIT and discuss finite temperature crossovers in its vicinity. We show that the specific heat C approximately Tlnln(1/T) at the MIT and that the metallic state near the MIT should exhibit a "conductivity minimum" as a function of temperature. We suggest Na4Ir3O8 as a candidate to test our predictions and compute its electron spectral function at the MIT.

Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Tao; Qi, Zeming, E-mail: zmqi@ustc.edu.cn; Wang, Yuyin

2015-07-13

Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can bemore » changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.« less

Disorder effect on the Friedel oscillations in a one-dimensional Mott insulator

NASA Astrophysics Data System (ADS)

Weiss, Y.; Goldstein, M.; Berkovits, R.

2007-07-01

The Friedel oscillations resulting from coupling a quantum dot to one edge of a disordered one-dimensional wire in the Mott insulator regime are calculated numerically using the density matrix renormalization group method. By investigating the influence of a constant weak disorder on the Friedel oscillations decay we find that the effect of disorder is reduced by increasing the interaction strength. This behavior is opposite to the recently reported influence of disorder in the Anderson insulator regime.

Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alimardani, Nasir; Conley, John F., E-mail: jconley@eecs.oregonstate.edu

Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling,more » and operation is relatively insensitive to temperature.« less

Mild myelin disruption elicits early alteration in behavior and proliferation in the subventricular zone.

PubMed

Gould, Elizabeth A; Busquet, Nicolas; Shepherd, Douglas; Dietz, Robert M; Herson, Paco S; Simoes de Souza, Fabio M; Li, Anan; George, Nicholas M; Restrepo, Diego; Macklin, Wendy B

2018-02-13

Myelin, the insulating sheath around axons, supports axon function. An important question is the impact of mild myelin disruption. In the absence of the myelin protein proteolipid protein (PLP1), myelin is generated but with age, axonal function/maintenance is disrupted. Axon disruption occurs in Plp1 -null mice as early as 2 months in cortical projection neurons. High-volume cellular quantification techniques revealed a region-specific increase in oligodendrocyte density in the olfactory bulb and rostral corpus callosum that increased during adulthood. A distinct proliferative response of progenitor cells was observed in the subventricular zone (SVZ), while the number and proliferation of parenchymal oligodendrocyte progenitor cells was unchanged. This SVZ proliferative response occurred prior to evidence of axonal disruption. Thus, a novel SVZ response contributes to the region-specific increase in oligodendrocytes in Plp1 -null mice. Young adult Plp1- null mice exhibited subtle but substantial behavioral alterations, indicative of an early impact of mild myelin disruption. © 2018, Gould et al.

Mild myelin disruption elicits early alteration in behavior and proliferation in the subventricular zone

PubMed Central

Gould, Elizabeth A; Busquet, Nicolas; Shepherd, Douglas; Dietz, Robert M; Herson, Paco S; Simoes de Souza, Fabio M; Li, Anan; George, Nicholas M

2018-01-01

Myelin, the insulating sheath around axons, supports axon function. An important question is the impact of mild myelin disruption. In the absence of the myelin protein proteolipid protein (PLP1), myelin is generated but with age, axonal function/maintenance is disrupted. Axon disruption occurs in Plp1-null mice as early as 2 months in cortical projection neurons. High-volume cellular quantification techniques revealed a region-specific increase in oligodendrocyte density in the olfactory bulb and rostral corpus callosum that increased during adulthood. A distinct proliferative response of progenitor cells was observed in the subventricular zone (SVZ), while the number and proliferation of parenchymal oligodendrocyte progenitor cells was unchanged. This SVZ proliferative response occurred prior to evidence of axonal disruption. Thus, a novel SVZ response contributes to the region-specific increase in oligodendrocytes in Plp1-null mice. Young adult Plp1-null mice exhibited subtle but substantial behavioral alterations, indicative of an early impact of mild myelin disruption. PMID:29436368

Dynamics at the Many-Body Localization Transition

NASA Astrophysics Data System (ADS)

Santos, Lea; Torres-Herrera, Jonathan

2015-05-01

Studies about localization in interacting systems have recently boomed. The interest in the subject is motivated by indications of the existence of a many-body localization (MBL) phase and by advances in experiments with optical lattices, which may serve as testbeds for corroborating theoretical predictions. A paradigmatic system for these analysis is the one-dimensional isolated Heisenberg model with random magnetic fields. We study the dynamics of this system for initial states prepared with high energies. Our focus is on the probability for finding the initial state later in time, the so-called survival probability. Two distinct behaviors are identified before the saturation of the relaxation process. At short times, the decay is very fast, as typical of clean systems. It subsequently slows down and develops a powerlaw behavior with an exponent related with the multifractal structure of the eigenstates. The curve of the powerlaw exponent versus the disorder strength exhibits an inflection point that is associated with the metal-insulator transition point. This work was supported by the NSF grant No. DMR-1147430.

Low eigenvalues of the entanglement Hamiltonian, localization length, and rare regions in one-dimensional disordered interacting systems

NASA Astrophysics Data System (ADS)

Berkovits, Richard

2018-03-01

The properties of the low-lying eigenvalues of the entanglement Hamiltonian and their relation to the localization length of a disordered interacting one-dimensional many-particle system are studied. The average of the first entanglement Hamiltonian level spacing is proportional to the ground-state localization length and shows the same dependence on the disorder and interaction strength as the localization length. This is the result of the fact that entanglement is limited to distances of order of the localization length. The distribution of the first entanglement level spacing shows a Gaussian-type behavior as expected for level spacings much larger than the disorder broadening. For weakly disordered systems (localization length larger than sample length), the distribution shows an additional peak at low-level spacings. This stems from rare regions in some samples which exhibit metalliclike behavior of large entanglement and large particle-number fluctuations. These intermediate microemulsion metallic regions embedded in the insulating phase are discussed.

Higher-order topological insulators and superconductors protected by inversion symmetry

NASA Astrophysics Data System (ADS)

Khalaf, Eslam

2018-05-01

We study surface states of topological crystalline insulators and superconductors protected by inversion symmetry. These fall into the category of "higher-order" topological insulators and superconductors which possess surface states that propagate along one-dimensional curves (hinges) or are localized at some points (corners) on the surface. We provide a complete classification of inversion-protected higher-order topological insulators and superconductors in any spatial dimension for the 10 symmetry classes by means of a layer construction. We discuss possible physical realizations of such states starting with a time-reversal-invariant topological insulator (class AII) in three dimensions or a time-reversal-invariant topological superconductor (class DIII) in two or three dimensions. The former exhibits one-dimensional chiral or helical modes propagating along opposite edges, whereas the latter hosts Majorana zero modes localized to two opposite corners. Being protected by inversion, such states are not pinned to a specific pair of edges or corners, thus offering the possibility of controlling their location by applying inversion-symmetric perturbations such as magnetic field.

Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

NASA Astrophysics Data System (ADS)

Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

2017-05-01

Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

Emergent Momentum-Space Skyrmion Texture on the Surface of Topological Insulators

NASA Astrophysics Data System (ADS)

Mohanta, Narayan; Kampf, Arno P.; Kopp, Thilo

The quantum anomalous Hall effect has been theoretically predicted and experimentally verified in magnetic topological insulators. In addition, the surface states of these materials exhibit a hedgehog-like ``spin'' texture in momentum space. Here, we apply the previously formulated low-energy model for Bi2Se3, a parent compound for magnetic topological insulators, to a slab geometry in which an exchange field acts only within one of the surface layers. In this sample set up, the hedgehog transforms into a skyrmion texture beyond a critical exchange field. This critical field marks a transition between two topologically distinct phases. The topological phase transition takes place without energy gap closing at the Fermi level and leaves the transverse Hall conductance unchanged and quantized to e2 / 2 h . The momentum-space skyrmion texture persists in a finite field range. It may find its realization in hybrid heterostructures with an interface between a three-dimensional topological insulator and a ferromagnetic insulator. The work was supported by the Deutsche Forschungsgemeinschaft through TRR 80.

Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

NASA Astrophysics Data System (ADS)

Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka

2013-04-01

We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.

Interface induced ferromagnetism in topological insulator above room temperature

NASA Astrophysics Data System (ADS)

Tang, Chi; Chang, Cui-Zu; Liu, Yawen; Chen, Tingyong; Moodera, Jagadeesh; Shi, Jing

The quantum anomalous Hall effect (QAHE) observed in magnetic topological insulators (TI), an outcome of time reversal symmetry broken surface states, exhibits many exotic properties. However, a major obstacle towards high temperature QAHE is the low Curie temperature in the disordered magnetically doped TI systems. Here we report a study on heterostructures of TI and magnetic insulator in which the magnetic insulator, namely thulium iron garnet or TIG, has perpendicular magnetic anisotropy. At the TIG/TI interface, TIG magnetizes the surface states of the TI film by exchange coupling, as revealed by the anomalous Hall effect (AHE). We demonstrate that squared AHE hysteresis loops persist well above room temperature. The interface proximity induced high-temperature ferromagnetism in topological insulators opens up new possibilities for the realization of QAHE at high temperatures. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # SC0012670.

Magnetic field tuning of an excitonic insulator between the weak and strong coupling regimes in quantum limit graphite [Tunable excitonic insulator in quantum limit graphite

DOE PAGES

Zhu, Zengwei; McDonald, R. D.; Shekhter, A.; ...

2017-05-04

Here, the excitonic insulator phase has long been predicted to form in proximity to a band gap opening in the underlying band structure. The character of the pairing is conjectured to crossover from weak (BCS-like) to strong coupling (BEC-like) as the underlying band structure is tuned from the metallic to the insulating side of the gap opening. Here we report the high-magnetic field phase diagram of graphite to exhibit just such a crossover. By way of comprehensive angle-resolved magnetoresistance measurements, we demonstrate that the underlying band gap opening occurs inside the magnetic field-induced phase, paving the way for a systematicmore » study of the BCS-BEC-like crossover by means of conventional condensed matter probes.« less

Fermi surfaces in Kondo insulators

NASA Astrophysics Data System (ADS)

Liu, Hsu; Hartstein, Máté; Wallace, Gregory J.; Davies, Alexander J.; Ciomaga Hatnean, Monica; Johannes, Michelle D.; Shitsevalova, Natalya; Balakrishnan, Geetha; Sebastian, Suchitra E.

2018-04-01

We report magnetic quantum oscillations measured using torque magnetisation in the Kondo insulator YbB12 and discuss the potential origin of the underlying Fermi surface. Observed quantum oscillations as well as complementary quantities such as a finite linear specific heat capacity in YbB12 exhibit similarities with the Kondo insulator SmB6, yet also crucial differences. Small heavy Fermi sections are observed in YbB12 with similarities to the neighbouring heavy fermion semimetallic Fermi surface, in contrast to large light Fermi surface sections in SmB6 which are more similar to the conduction electron Fermi surface. A rich spectrum of theoretical models is suggested to explain the origin across different Kondo insulating families of a bulk Fermi surface potentially from novel itinerant quasiparticles that couple to magnetic fields, yet do not couple to weak DC electric fields.

Magnetic field tuning of an excitonic insulator between the weak and strong coupling regimes in quantum limit graphite [Tunable excitonic insulator in quantum limit graphite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Zengwei; McDonald, R. D.; Shekhter, A.

Here, the excitonic insulator phase has long been predicted to form in proximity to a band gap opening in the underlying band structure. The character of the pairing is conjectured to crossover from weak (BCS-like) to strong coupling (BEC-like) as the underlying band structure is tuned from the metallic to the insulating side of the gap opening. Here we report the high-magnetic field phase diagram of graphite to exhibit just such a crossover. By way of comprehensive angle-resolved magnetoresistance measurements, we demonstrate that the underlying band gap opening occurs inside the magnetic field-induced phase, paving the way for a systematicmore » study of the BCS-BEC-like crossover by means of conventional condensed matter probes.« less

Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

PubMed Central

Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

2014-01-01

Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

Enhancing optical response of graphene through stochastic resonance

NASA Astrophysics Data System (ADS)

Ying, Lei; Huang, Liang; Lai, Ying-Cheng

2018-04-01

Enhancing the optical response of graphene is a topic of interest with applications in optoelectronics. Subject to light irradiation, graphene can exhibit nontrivial topologically insulating states, effectively turning itself into a Floquet topological insulator due to the time periodicity of the external driving. We find that, when random disorder is present, its interplay with the topologically insulating states can have a dramatic effect on electronic transport through graphene. In particular, we consider the prototypical setting where a graphene nanoribbon is irradiated by circularly polarized light, where the length of the nanoribbon is sufficiently long so that evanescent states have little effect on transport. We uncover a resonance phenomenon in which the conductance is enhanced as the disorder strength is increased from zero, reaches a maximum value for an optimal level of disorder, and decreases as the disorder is strengthened further. With respect to its value at the zero-disorder strength, the maximum conductance value can be as much as 50 % higher. Qualitatively, this can be understood as a result of the dynamical interplay between disorder and Floquet states (channels) generated by light irradiation. Quantitatively, the resonance phenomenon can be explained in the framework of Born theory, where the disorder reorganizes the Floquet Hamiltonian and enhances the effective coupling between the adjacent Floquet conducting channels. That is, disorder is capable of promoting both photon absorption and emission, leading to significant enhancement of nonequilibrium electronic transport. We demonstrate the robustness of the resonance phenomenon by investigating the effects of spatial symmetry breaking on transport and provide an understanding based on analyzing the behavior of the density of states of the Floquet channels.

A Classroom Activity for Teaching Electric Polarization of Insulators and Conductors

ERIC Educational Resources Information Center

Deligkaris, Christos

2018-01-01

The phenomenon of electric polarization is crucial to student understanding of forces exerted between charged objects and insulators or conductors, the process of charging by induction, and the behavior of electroscopes near charged objects. In addition, polarization allows for microscopic-level models of everyday-life macroscopic-level phenomena.…

B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene gate insulator

NASA Astrophysics Data System (ADS)

Karaya, Ryota; Baba, Ikki; Mori, Yosuke; Matsumoto, Tsubasa; Nakajima, Takashi; Tokuda, Norio; Kawae, Takeshi

2017-10-01

A B-doped diamond field-effect transistor (FET) with a ferroelectric vinylidene fluoride-trifluoroethylene (VDF-TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film deposited on the B-doped diamond showed good insulating and ferroelectric properties. Also, a Pt/VDF-TrFE/B-doped diamond layered structure showed ideal behavior as a metal-ferroelectric-semiconductor (MFS) capacitor, and the memory window width was 11 V, when the gate voltage was swept from 20 to -20 V. The fabricated MFS-type FET structure showed the typical properties of a depletion-type p-channel FET and a maximum drain current density of 0.87 mA/mm at room temperature. The drain current versus gate voltage curves of the proposed FET showed a clockwise hysteresis loop owing to the ferroelectricity of the VDF-TrFE gate insulator. In addition, we demonstrated the logic inverter with the MFS-type diamond FET coupled with a load resistor, and obtained the inversion behavior of the input signal and a maximum gain of 18.4 for the present circuit.

Dark current of organic heterostructure devices with insulating spacer layers

NASA Astrophysics Data System (ADS)

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

2015-03-01

The dark current density at fixed voltage bias in donor/acceptor organic planar heterostructure devices can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of an interfacial exciplex state. If the exciplex formation rate limits current flow, the insulating interface layer can increase dark current whereas, if the exciplex recombination rate limits current flow, the insulating interface layer decreases dark current. We present a device model to describe this behavior and illustrate it experimentally for various donor/acceptor systems, e.g. P3HT/LiF/C60.

Thermal transport across metal–insulator interface via electron–phonon interaction.

PubMed

Zhang, Lifa; Lü, Jing-Tao; Wang, Jian-Sheng; Li, Baowen

2013-11-06

The thermal transport across a metal–insulator interface can be characterized by electron–phonon interaction through which an electron lead is coupled to a phonon lead if phonon–phonon coupling at the interface is very weak. We investigate the thermal conductance and rectification between the electron part and the phonon part using the nonequilibrium Green's function method. It is found that the thermal conductance has a nonmonotonic behavior as a function of average temperature or the coupling strength between the phonon leads in the metal part and the insulator part. The metal–insulator interface shows a clear thermal rectification effect, which can be reversed by a change in average temperature or the electron–phonon coupling.

Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

DOE PAGES

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; ...

2015-05-14

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and wemore » discuss relevant experimental data.« less

Highly flexible cross-linked cellulose nanofibril sponge-like aerogels with improved mechanical property and enhanced flame retardancy.

PubMed

Guo, Limin; Chen, Zhilin; Lyu, Shaoyi; Fu, Feng; Wang, Siqun

2018-01-01

Cellulose nanofibril (CNF) aerogel is highly flammable and its mechanical strength is very soft, which is unfavourable due to safety concerns and impractical when used as the thermal insulation material. In this work, we used N-methylol dimethylphosphonopropionamide (MDPA) and 1,2,3,4-butanetetracarboxylic acid (BTCA) as co-additives and then prepared lightweight flame resistant CNF sponge-like aerogels via an eco-friendly freeze-drying and post cross-linking method. The CNF/BTCA/MDPA aerogel exhibited a better flame retardant performance, outstanding self-extinguishing behaviour and significantly increased char residue (by as much as 268%) compared with the neat CNF aerogel. Meanwhile, the resilience of the aerogel samples improved significantly as the flexibility decreased slightly. Furthermore, the aerogel samples still exhibited excellent thermal insulating properties with thermal conductivity as low as 0.03258W/(m k). The combination of these characteristics makes the CNF-based aerogel a promising insulation candidate for thermal protective equipment (e.g., fire-protection clothing or advanced spacesuit elements) in the future. Copyright © 2017 Elsevier Ltd. All rights reserved.

Strain-induced insulator-to-metal transition in LaTiO3 within DFT + DMFT

NASA Astrophysics Data System (ADS)

Dymkowski, Krzysztof; Ederer, Claude

2014-04-01

We present results of combined density functional theory plus dynamical mean-field theory (DFT + DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of about -2%. This transition is driven by strain-induced changes in the crystal-field splitting between the Ti t2g orbitals, which in turn are intimately related to the collective tilts and rotations of the oxygen octahedra in the orthorhombically distorted Pbnm perovskite structure. An accurate treatment of the underlying crystal structure is therefore crucial for a correct description of the observed metal-insulator transition. Our theoretical results are consistent with recent experimental observations and demonstrate that metallic behavior in heterostructures of otherwise insulating materials can emerge also from mechanisms other than genuine interface effects.

Chern number distribution and quantum phase transition in three-band lattices

NASA Astrophysics Data System (ADS)

Yu, H. L.; Zhai, Z. Y.

2018-05-01

We numerically study the integer quantum Hall effect on a three-band lattice. With modulating the hopping integral, the peculiar behaviors have been found: (1) Chern numbers of Landau subbands are redistributed; (2) the Hall plateau exhibits a direct transition; (3) there are critical states, where the neighboring two subbands merge together and the pseudogap leads to undefined Chern numbers. By contrast, in the presence of disorder, we find that the higher Hall plateau is sensitive to the disorder and it is always destroyed earlier than lower ones. We also find that the insulator-plateau transition becomes sharper with increasing the size of system. And the critical energy Ec1 gradually shifts to the center of plateau while Ec2 is unaffected with increasing the disorder strength.

High-Dimensional Disorder-Driven Phenomena in Weyl Semimetals, Semiconductors, and Related Systems

NASA Astrophysics Data System (ADS)

Syzranov, Sergey V.; Radzihovsky, Leo

2018-03-01

It is commonly believed that a noninteracting disordered electronic system can undergo only the Anderson metal-insulator transition. It has been suggested, however, that a broad class of systems can display disorder-driven transitions distinct from Anderson localization that have manifestations in the disorder-averaged density of states, conductivity, and other observables. Such transitions have received particular attention in the context of recently discovered 3D Weyl and Dirac materials but have also been predicted in cold-atom systems with long-range interactions, quantum kicked rotors, and all sufficiently high-dimensional systems. Moreover, such systems exhibit unconventional behavior of Lifshitz tails, energy-level statistics, and ballistic-transport properties. Here, we review recent progress and the status of results on non-Anderson disorder-driven transitions and related phenomena.

Switchable wavelength-selective and diffuse metamaterial absorber/emitter with a phase transition spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hao; Yang, Yue; Wang, Liping, E-mail: liping.wang@asu.edu

2014-08-18

We numerically demonstrate a switchable metamaterial absorber/emitter by thermally turning on or off the excitation of magnetic resonance upon the phase transition of vanadium dioxide (VO{sub 2}). Perfect absorption peak exists around the wavelength of 5 μm when the excitation of magnetic resonance is supported with the insulating VO{sub 2} spacer layer. The wavelength-selective absorption is switched off when the magnetic resonance is disabled with metallic VO{sub 2} that shorts the top and bottom metallic structures. The resonance wavelength can be tuned with different geometry, and the switchable metamaterial exhibits diffuse behaviors at oblique angles. The results would facilitate the designmore » of switchable metamaterials for active control in energy and sensing applications.« less

Splitting of electrons and violation of the Luttinger sum rule

NASA Astrophysics Data System (ADS)

Quinn, Eoin

2018-03-01

We obtain a controlled description of a strongly correlated regime of electronic behavior. We begin by arguing that there are two ways to characterize the electronic degree of freedom, either by the canonical fermion algebra or the graded Lie algebra su (2 |2 ) . The first underlies the Fermi liquid description of correlated matter, and we identify a regime governed by the latter. We exploit an exceptional central extension of su (2 |2 ) to employ a perturbative scheme recently developed by Shastry and obtain a series of successive approximations for the electronic Green's function. We then focus on the leading approximation, which reveals a splitting in two of the electronic dispersion. The Luttinger sum rule is violated, and a Mott metal-insulator transition is exhibited. We offer a perspective.

Correlation lengths of the wigner-crystal order in a two-dimensional electron system at high magnetic fields.

PubMed

Ye, P D; Engel, L W; Tsui, D C; Lewis, R M; Pfeiffer, L N; West, K

2002-10-21

The insulator terminating the fractional quantum Hall series at low Landau level filling nu is generally taken to be a pinned Wigner crystal (WC), and exhibits a microwave resonance that is interpreted as a WC pinning mode. For a high quality sample at several densities, n, we find maxima in resonance peak frequency, f(pk), vs magnetic field, B. L, the correlation length of WC order, is calculated from f(pk). For each n, L vs nu tends at low nu toward a line with positive intercept; the fit is accurate over as much as a factor of 5 range of nu. The linear behavior is interpreted as due to B compressing the electron wave functions, to alter the effective electron-impurity interaction.

Weak antilocalization in Cd3As2 thin films

PubMed Central

Zhao, Bo; Cheng, Peihong; Pan, Haiyang; Zhang, Shuai; Wang, Baigeng; Wang, Guanghou; Xiu, Faxian; Song, Fengqi

2016-01-01

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50 nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film. PMID:26935029

Weak antilocalization in Cd3As2 thin films.

PubMed

Zhao, Bo; Cheng, Peihong; Pan, Haiyang; Zhang, Shuai; Wang, Baigeng; Wang, Guanghou; Xiu, Faxian; Song, Fengqi

2016-03-03

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50 nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.

Nuclear instrumentation cable end seal

DOEpatents

Cannon, Collins P.; Brown, Donald P.

1979-01-01

An improved coaxial end seal for hermetically sealed nuclear instrumentation cable exhibiting an improved breakdown pulse noise characteristic under high voltage, high temperature conditions. A tubular insulator body has metallized interior and exterior surface portions which are braze sealed to a center conductor and an outer conductive sheath. The end surface of the insulator body which is directed toward the coaxial cable to which it is sealed has a recessed surface portion within which the braze seal material terminates.

High temperature electrical conductivity of rigid polyurethane foam

NASA Astrophysics Data System (ADS)

Johnson, R. T., Jr.

1984-03-01

The temperature dependence of the electrical conductivity of three rigid polyurethane foams prepared using different formulations was measured to approx. 320 C. The materials exhibit similar conductivity characteristics, showing a pronounced increase in conductivity with increasing temperature. The insulating characteristics to approx. 200 C are better than that for phenolic materials (glass fabric reinforced), and are similar to those for silicone materials (glass microsphere reinforced). At higher temperatures (500 to 600 C), the phenolics and silicones are better insulators.

Two dimensional topological insulator in quantizing magnetic fields

NASA Astrophysics Data System (ADS)

Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

2018-05-01

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at B ≈ 6 T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI persists from zero up to a critical magnetic field Bc after which a gap opens up in the 2D TI spectrum.

Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3

NASA Astrophysics Data System (ADS)

Urkude, Rajashri; Rawat, Rajeev; Palikundwar, Umesh

2018-04-01

In 3D topological insulators, achieving a genuine bulk-insulating state is an important topic of research. The material system (Bi,Sb)2(Te,Se)3 has been proposed as a topological insulator with high resistivity and low carrier concentration. Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by metallic bulk conduction that overwhelms the surface transport. Here we present a study of the bulk-insulating properties of (Bi0.3Sb0.7)2Te3. We show that a high resistivity exceeding 1 Ωm as a result of variable-range hopping behavior of state and Shubnikov-de Haas oscillations as coming from the topological surface state. We have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport properties in this material. Our results demonstrate that (Bi0.3Sb0.7)2Te3 is a good material for studying the surface quantum transport in a topological insulator.

Evolution of competing magnetic order in the J eff=1/2 insulating state of Sr 2Ir 1-xRu xO 4

DOE PAGES

Calder, Stuart A.; Kim, Jong-Woo; Cao, Guixin; ...

2015-10-27

We investigate the magnetic properties of the series Sr 2Ir 1-xRu xO 4 with neutron, resonant x-ray and magnetization measurements. The results indicate an evolution and coexistence of magnetic structures via a spin flop transition from ab-plane to c-axis collinear order as the 5d Ir4 + ions are replaced with an increasing concentration of 4d Ru4 + ions. The magnetic structures within the ordered regime of the phase diagram (x<0.3) are reported. Despite the changes in magnetic structure no alteration of the J eff=1/2 ground state is observed. This behavior of Sr 2Ir 1-xRu xO 4 is consistent with electronicmore » phase separation and diverges from a standard scenario of hole doping. The role of lattice alterations with doping on the magnetic and insulating behavior is considered. Our results presented here provide insight into the magnetic insulating states in strong spin-orbit coupled materials and the role perturbations play in altering the behavior.« less

Antiferromagnetic Chern Insulators in Noncentrosymmetric Systems

NASA Astrophysics Data System (ADS)

Jiang, Kun; Zhou, Sen; Dai, Xi; Wang, Ziqiang

2018-04-01

We investigate a new class of topological antiferromagnetic (AF) Chern insulators driven by electronic interactions in two-dimensional systems without inversion symmetry. Despite the absence of a net magnetization, AF Chern insulators (AFCI) possess a nonzero Chern number C and exhibit the quantum anomalous Hall effect (QAHE). Their existence is guaranteed by the bifurcation of the boundary line of Weyl points between a quantum spin Hall insulator and a topologically trivial phase with the emergence of AF long-range order. As a concrete example, we study the phase structure of the honeycomb lattice Kane-Mele model as a function of the inversion-breaking ionic potential and the Hubbard interaction. We find an easy z axis C =1 AFCI phase and a spin-flop transition to a topologically trivial x y plane collinear antiferromagnet. We propose experimental realizations of the AFCI and QAHE in correlated electron materials and cold atom systems.

Thermoelectric properties of an ultra-thin topological insulator.

PubMed

Islam, S K Firoz; Ghosh, T K

2014-04-23

Thermoelectric coefficients of an ultra-thin topological insulator are presented here. The hybridization between top and bottom surface states of a topological insulator plays a significant role. In the absence of a magnetic field, the thermopower increases and thermal conductivity decreases with an increase in the hybridization energy. In the presence of a magnetic field perpendicular to the ultra-thin topological insulator, thermoelectric coefficients exhibit quantum oscillations with inverse magnetic field, whose frequency is strongly modified by the Zeeman energy and whose phase factor is governed by the product of the Landé g-factor and the hybridization energy. In addition to the numerical results, the low-temperature approximate analytical results for the thermoelectric coefficients are also provided. It is also observed that for a given magnetic field these transport coefficients oscillate with hybridization energy, at a frequency that depends on the Landé g-factor.

Holographic superconductor on a novel insulator

NASA Astrophysics Data System (ADS)

Ling, Yi; Liu, Peng; Wu, Jian-Pin; Wu, Meng-He

2018-01-01

We construct a holographic superconductor model, based on a gravity theory, which exhibits novel metal-insulator transitions. We investigate the condition for the condensation of the scalar field over the parameter space, and then focus on the superconductivity over the insulating phase with a hard gap, which is supposed to be Mott-like. It turns out that the formation of the hard gap in the insulating phase benefits the superconductivity. This phenomenon is analogous to the fact that the pseudogap phase can promote the pre-pairing of electrons in high {T}{{c}} cuprates. We expect that this work can shed light on understanding the mechanism of high {T}{{c}} superconductivity from the holographic side. Supported by Natural Science Foundation of China (11575195, 11775036, 11305018), Y.L. also acknowledges the support from Jiangxi young scientists (JingGang Star) program and 555 talent project of Jiangxi Province. J. P. Wu is also supported by Natural Science Foundation of Liaoning Province (201602013)

Growing and testing mycelium bricks as building insulation materials

NASA Astrophysics Data System (ADS)

Xing, Yangang; Brewer, Matthew; El-Gharabawy, Hoda; Griffith, Gareth; Jones, Phil

2018-02-01

In order to improve energy performance of buildings, insulation materials (such as mineral glass and rock wools, or fossil fuel-based plastic foams) are being used in increasing quantities, which may lead to potential problem with materials depletions and landfill disposal. One sustainable solution suggested is the use of bio-based, biodegradable materials. A number of attempts have been made to develop biomaterials, such as sheep wood, hemcrete or recycled papers. In this paper, a novel type of bio insulation materials - mycelium is examined. The aim is to produce mycelium materials that could be used as insulations. The bio-based material was required to have properties that matched existing alternatives, such as expanded polystyrene, in terms of physical and mechanical characteristics but with an enhanced level of biodegradability. The testing data showed mycelium bricks exhibited good thermal performance. Future work is planned to improve growing process and thermal performance of the mycelium bricks.

Toward a benchmark material in aerogel development

NASA Astrophysics Data System (ADS)

Sibille, Laurent; Cronise, Raymond J.; Noever, David A.; Hunt, Arlon J.

1996-03-01

Discovered in the thirties, aerogels constitute today the lightest solids known while exhibiting outstanding thermal and noise insulation properties in air and vacuum. In a far-reaching collaboration, the Space Science Laboratory at NASA Marshall Space Flight Center and the Microstructured Materials Group at Lawrence Berkeley National Laboratory are engaged in a two-fold research effort aiming at characterizing the microstructure of silica aerogels and the development of benchmark samples through the use of in-orbit microgravity environment. Absence of density-driven convection flows and sedimentation is sought to produce aerogel samples with narrow distribution of pore sizes, thus largely improving transparency of the material in the visible range. Furthermore, highly isotropic distribution of doping materials are attainable even in large gels grown in microgravity. Aerospace companies (cryogenic tanks insulation and high temperature insulation of space vehicles), insulation manufacturers (household and industrial applications) as well as pharmaceutical companies (biosensors) are potential end-users of this rapidly developing technology.

Erosion of polyurethane insulation.

NASA Technical Reports Server (NTRS)

Kraus, S.

1973-01-01

Detailed description of the test program in which erosion of the spray foam insulation used in the S-II stage of the Saturn-V Apollo launch vehicle was investigated. The behavior of the spray foam was investigated at the elevated temperature and static pressure appropriate to the S-II stage environment, but in the absence of the aerodynamic shear stress.

Characterizing Featureless Mott Insulating State by Quasiparticle Interferences - A DMFT Prospect

NASA Astrophysics Data System (ADS)

Mukherjee, Shantanu; Lee, Wei-Cheng

In this talk we discuss the quasiparticle interferences (QPIs) of a Mott insulator using a T-matrix formalism implemented with the dynamical mean-field theory (T-DMFT). In the Mott insulating state, the DMFT predicts a singularity in the real part of electron self energy s (w) at low frequencies, which completely washes out the QPI at small bias voltage. However, the QPI patterns produced by the non-interacting Fermi surfaces can appear at a critical bias voltage in Mott insulating state. The existence of this non-zero critical bias voltage is a direct consequence of the singular behavior of Re[s (w)] /sim n/w with n behaving as the 'order parameter' of Mott insulating state. We propose that this reentry of non-interacting QPI patterns could serve as an experimental signature of Mott insulating state, and the 'order parameter' can be experimentally measured W.C.L acknowledges financial support from start up fund from Binghamton University.

Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer.

PubMed

Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

2009-05-13

The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

Temperature Dependence of Radiation Induced Conductivity in Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dennison, J. R.; Gillespie, Jodie; Hodges, Joshua

2009-03-10

This study measures Radiation Induced Conductivity (RIC) of Low Density Polyethylene (LDPE) over temperatures ranging from {approx}110 K to {approx}350 K. RIC occurs when incident ionizing radiation deposits energy and excites electrons into the conduction band of insulators. Conductivity was measured when a voltage was applied across vacuum-baked, thin film LDPE polymer samples in a parallel plate geometry. RIC was calculated as the difference in sample conductivity under no incident radiation and under an incident {approx}4 MeV electron beam at low incident fluxes of 10{sup -4}-10{sup -1} Gr/sec. The steady-state RIC was found to agree well with the standard powermore » law relation, {sigma}{sub RIC} = k{sub RIC}{center_dot}D ring {sup {delta}} between conductivity, {sigma} and adsorbed dose rate, D ring . Both the proportionality constant, k{sub RIC}, and the power, {delta}, were found to be temperature dependant above {approx}250 K, with behavior consistent with photoconductivity models developed for localized trap states in disordered semiconductors. Below {approx}250 K, kRIC and {delta} exhibited little change. The observed difference in temperature dependence might be related to a structural phase transition seen at T{sub {beta}}{approx}256 K in prior studies of mechanical and thermodynamic properties of LDPE.« less

Magnetic study of M-type Ru–Ti doped strontium hexaferrite nanocrystalline particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsmadi, A. M.; Bsoul, I.; Mahmood, S. H.

2015-11-01

We carried out a systematic study on the effect of the substitution of Ti2+ and Ru4+ ions for Fe3+ ions on the structural and magnetic properties of the strontium ferrite SrFe12-2xRuxTixO19 nanoparticles with (0 <= x <= 0: 3), using x-ray diffraction, Quantum Design PPMS-9 magnetometry, and electrical resistivity. A clear irreversibility between the zero-field-cooled and field-cooled curves was observed below room temperature and the zero-field-cooled magnetization curves displayed a broad peak at a temperature TM. These results were discussed within the framework of random particle assembly model and associated with the magnetic domain wall motion. The resistivity data showedmore » some kind of a transition from insulator to perfect insulator around TM. The high-temperature magnetization measurements exhibited sharp peaks just below T-c indicating a superparamagnetic behavior. With Ru-Ti substitution, the saturation magnetization at 5 K showed small variations were it slightly increased with increasing x up to 0.2, and then decrease for x = 0.3, while the coercivity decreased monotonically, recording a reduction of about 78% at x = 0.3. These results were discussed in light of the cationic distributions based on the results of the structural refinements.« less

Universalities of thermodynamic signatures in topological phases

PubMed Central

Kempkes, S. N.; Quelle, A.; Smith, C. Morais

2016-01-01

Topological insulators (superconductors) are materials that host symmetry-protected metallic edge states in an insulating (superconducting) bulk. Although they are well understood, a thermodynamic description of these materials remained elusive, firstly because the edges yield a non-extensive contribution to the thermodynamic potential, and secondly because topological field theories involve non-local order parameters, and cannot be captured by the Ginzburg-Landau formalism. Recently, this challenge has been overcome: by using Hill thermodynamics to describe the Bernevig-Hughes-Zhang model in two dimensions, it was shown that at the topological phase transition the thermodynamic potential does not scale extensively due to boundary effects. Here, we extend this approach to different topological models in various dimensions (the Kitaev chain and Su-Schrieffer-Heeger model in one dimension, the Kane-Mele model in two dimensions and the Bernevig-Hughes-Zhang model in three dimensions) at zero temperature. Surprisingly, all models exhibit the same universal behavior in the order of the topological-phase transition, depending on the dimension. Moreover, we derive the topological phase diagram at finite temperature using this thermodynamic description, and show that it displays a good agreement with the one calculated from the Uhlmann phase. Our work reveals unexpected universalities and opens the path to a thermodynamic description of systems with a non-local order parameter. PMID:27929041

Universalities of thermodynamic signatures in topological phases.

PubMed

Kempkes, S N; Quelle, A; Smith, C Morais

2016-12-08

Topological insulators (superconductors) are materials that host symmetry-protected metallic edge states in an insulating (superconducting) bulk. Although they are well understood, a thermodynamic description of these materials remained elusive, firstly because the edges yield a non-extensive contribution to the thermodynamic potential, and secondly because topological field theories involve non-local order parameters, and cannot be captured by the Ginzburg-Landau formalism. Recently, this challenge has been overcome: by using Hill thermodynamics to describe the Bernevig-Hughes-Zhang model in two dimensions, it was shown that at the topological phase transition the thermodynamic potential does not scale extensively due to boundary effects. Here, we extend this approach to different topological models in various dimensions (the Kitaev chain and Su-Schrieffer-Heeger model in one dimension, the Kane-Mele model in two dimensions and the Bernevig-Hughes-Zhang model in three dimensions) at zero temperature. Surprisingly, all models exhibit the same universal behavior in the order of the topological-phase transition, depending on the dimension. Moreover, we derive the topological phase diagram at finite temperature using this thermodynamic description, and show that it displays a good agreement with the one calculated from the Uhlmann phase. Our work reveals unexpected universalities and opens the path to a thermodynamic description of systems with a non-local order parameter.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

PubMed

Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

2016-09-14

We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

PubMed

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-20

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

NASA Astrophysics Data System (ADS)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-01

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Instability of Insulators near Quantum Phase Transitions

NASA Astrophysics Data System (ADS)

Doron, A.; Tamir, I.; Levinson, T.; Ovadia, M.; Sacépé, B.; Shahar, D.

2017-12-01

Thin films of amorphous indium oxide undergo a magnetic field driven superconducting to insulator quantum phase transition. In the insulating phase, the current-voltage characteristics show large current discontinuities due to overheating of electrons. We show that the onset voltage for the discontinuities vanishes as we approach the quantum critical point. As a result, the insulating phase becomes unstable with respect to any applied voltage making it, at least experimentally, immeasurable. We emphasize that unlike previous reports of the absence of linear response near quantum phase transitions, in our system, the departure from equilibrium is discontinuous. Because the conditions for these discontinuities are satisfied in most insulators at low temperatures, and due to the decay of all characteristic energy scales near quantum phase transitions, we believe that this instability is general and should occur in various systems while approaching their quantum critical point. Accounting for this instability is crucial for determining the critical behavior of systems near the transition.

Resistivity of the insulating phase approaching the 2D metal-insulator transition: the effect of spin polarization

NASA Astrophysics Data System (ADS)

Li, Shiqi; Sarachik, Myriam

We compare the resistivity of the dilute, strongly-interacting 2D electron system in the insulating phase of a silicon MOSFET for unpolarized electrons in the absence of magnetic field and in the presence of an in-plane magnetic field sufficient to fully polarize the electrons. In both cases the resistivity obeys Efros-Shklovskii variable range hopping ρ (T) =ρ0exp [(TES / T) 1 / 2 ] , with TES and 1 /ρ0 mapping onto each other provided one applies a shift reported earlier of the critical density nc with magnetic field: the transport properties of the insulator are the same for unpolarized and fully polarized electron spins. Interestingly, the parameters TES and 1 /ρ0 =σ0 are consistent with critical behavior approaching a metal-insulator transition. This work was supported by the National Science Foundation Grant DMR-1309008 and the Binational Science Foundation Grant 2012210.

Ramp-edge structured tunneling devices using ferromagnet electrodes

DOEpatents

Kwon, Chuhee [Long Beach, CA; Jia, Quanxi [Los Alamos, NM

2002-09-03

The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La.sub.0.7 Sr.sub.0.3) MnO.sub.3, ferromagnetic electrodes and a SrTiO.sub.3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.

Restraint of angiogenesis by zinc finger transcription factor CTCF-dependent chromatin insulation

PubMed Central

Tang, Ming; Chen, Bo; Pardo, Carolina; Pampo, Christine; Chen, Jing; Lien, Ching-Ling; Wu, Lizi; Wang, Heiman; Yao, Kai; Oh, S. Paul; Seto, Edward; Smith, Lois E. H.; Siemann, Dietmar W.; Kladde, Michael P.; Cepko, Constance L.; Lu, Jianrong

2011-01-01

Angiogenesis is meticulously controlled by a fine balance between positive and negative regulatory activities. Vascular endothelial growth factor (VEGF) is a predominant angiogenic factor and its dosage is precisely regulated during normal vascular formation. In cancer, VEGF is commonly overproduced, resulting in abnormal neovascularization. VEGF is induced in response to various stimuli including hypoxia; however, very little is known about the mechanisms that confine its induction to ensure proper angiogenesis. Chromatin insulation is a key transcription mechanism that prevents promiscuous gene activation by interfering with the action of enhancers. Here we show that the chromatin insulator-binding factor CTCF binds to the proximal promoter of VEGF. Consistent with the enhancer-blocking mode of chromatin insulators, CTCF has little effect on basal expression of VEGF but specifically affects its activation by enhancers. CTCF knockdown cells are sensitized for induction of VEGF and exhibit elevated proangiogenic potential. Cancer-derived CTCF missense mutants are mostly defective in blocking enhancers at the VEGF locus. Moreover, during mouse retinal development, depletion of CTCF causes excess angiogenesis. Therefore, CTCF-mediated chromatin insulation acts as a crucial safeguard against hyperactivation of angiogenesis. PMID:21896759

Creep Behavior of Structural Insulated Panels (SIPS): Results from a Pilot Study

Treesearch

Dwight McDonald; Marshall Begel; C. Adam Senalik; Robert Ross; Thomas D. Skaggs; Borjen Yeh; Thomas Williamson

2014-01-01

Structural insulated panels (SIPs) have been recognized as construction materials in the International Residential Code (IRC) since 2009. Although most SIPs are used in wall applications, they can also be used as roof or floor panels that are subjected to long-term transverse loading, for which SIP creep performance may be critical in design. However, limited...

Sunspot: A program to model the behavior of hypervelocity impact damaged multilayer insulation in the Sunspot thermal vacuum chamber of Marshall Space Flight Center

NASA Technical Reports Server (NTRS)

Rule, W. K.; Hayashida, K. B.

1992-01-01

The development of a computer program to predict the degradation of the insulating capabilities of the multilayer insulation (MLI) blanket of Space Station Freedom due to a hypervelocity impact with a space debris particle is described. A finite difference scheme is used for the calculations. The computer program was written in Microsoft BASIC. Also described is a test program that was undertaken to validate the numerical model. Twelve MLI specimens were impacted at hypervelocities with simulated debris particles using a light gas gun at Marshall Space Flight Center. The impact-damaged MLI specimens were then tested for insulating capability in the space environment of the Sunspot thermal vacuum chamber at MSFC. Two undamaged MLI specimens were also tested for comparison with the test results of the damaged specimens. The numerical model was found to adequately predict behavior of the MLI specimens in the Sunspot chamber. A parameter, called diameter ratio, was developed to relate the nominal MLI impact damage to the apparent (for thermal analysis purposes) impact damage based on the hypervelocity impact conditions of a specimen.

Characterization of 10,12-pentacosadiynoic acid Langmuir-Blodgett monolayers and their use in metal-insulator-metal tunnel devices.

PubMed

Sharma, Saumya; Khawaja, Mohamad; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2014-01-01

The characterization of Langmuir-Blodgett thin films of 10,12-pentacosadiynoic acid (PDA) and their use in metal-insulator-metal (MIM) devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension-area isotherms of polymeric and monomeric PDA. Langmuir-Blodgett (LB, vertical deposition) and Langmuir-Schaefer (LS, horizontal deposition) techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass). The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current-voltage characteristics (I-V), and UV-vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current-voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni-PDA LB film-Ni structures.

Intrinsic optical conductivity of a {{\\rm{C}}}_{2v} symmetric topological insulator

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Matsubara, Masahiko; Bellotti, Enrico; Shi, Junxia

2017-07-01

In this work we analytically investigate the longitudinal optical conductivity of the {{{C}}}2v symmetric topological insulator. The conductivity expressions at T = 0 are derived using the Kubo formula and expressed as a function of the ratio of the Dresselhaus and Rashba parameters that characterize the low-energy Hamiltonian. We find that the longitudinal inter-band conductivity vanishes when Dresselhaus and Rashba parameters are equal in strength, also called the persistent spin helix state. The calculations are extended to obtain the frequency-dependent real and imaginary components of the optical conductivity for the topological Kondo insulator SmB6 which exhibits {{{C}}}2v symmetric and anisotropic Dirac cones hosting topological states at \\overline{X} point on the surface Brillouin zone.

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yang; Feng, Xiao; Ou, Yunbo

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

Persistent mobility edges and anomalous quantum diffusion in order-disorder separated quantum films

NASA Astrophysics Data System (ADS)

Zhong, Jianxin; Stocks, G. Malcolm

2007-01-01

A concept of order-disorder separated quantum films is proposed for the design of ultrathin quantum films of a few atomic layers thick with unconventional transport properties. The concept is demonstrated through studying an atomic bilayer comprised of an ordered layer and a disordered layer. Without the disordered layer or the ordered layer, the system is a conducting two-dimensional (2D) crystal or an insulating disordered 2D electron system. Without the order-disorder phase separation, a disordered bilayer is insulating under large disorder. In an order-disorder separated atomic bilayer, however, we show that the system behaves remarkably different from conventional ordered or disordered electron systems, exhibiting metal-insulator transitions with persistent mobility edges and superdiffusive anomalous quantum diffusion.

Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

PubMed

Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2016-08-23

Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

Sensitization to Gliadin Induces Moderate Enteropathy and Insulitis in Nonobese Diabetic-DQ8 Mice

PubMed Central

Galipeau, Heather J.; Rulli, Nestor E.; Jury, Jennifer; Huang, Xianxi; Araya, Romina; Murray, Joseph A.; David, Chella S.; Chirdo, Fernando G.; McCoy, Kathy D.; Verdu, Elena F.

2012-01-01

Celiac disease (CD) is frequently diagnosed in patients with type 1 diabetes (T1D), and T1D patients can exhibit Abs against tissue transglutaminase, the auto-antigen in CD. Thus, gliadin, the trigger in CD, has been suggested to have a role in T1D pathogenesis. The objective of this study was to investigate whether gliadin contributes to enteropathy and insulitis in NOD-DQ8 mice, an animal model that does not spontaneously develop T1D. Gliadin-sensitized NOD-DQ8 mice developed moderate enteropathy, intraepithelial lymphocytosis, and barrier dysfunction, but not insulitis. Administration of anti-CD25 mAbs before gliadin-sensitization induced partial depletion of CD25+Foxp3+ T cells and led to severe insulitis, but did not exacerbate mucosal dysfunction. CD4+ T cells isolated from pancreatic lymph nodes of mice that developed insulitis showed increased proliferation and proinflammatory cytokines after incubation with gliadin but not with BSA. CD4+ T cells isolated from nonsensitized controls did not response to gliadin or BSA. In conclusion, gliadin sensitization induced moderate enteropathy in NOD-DQ8 mice. However, insulitis development required gliadin-sensitization and partial systemic depletion of CD25+Foxp3+ T cells. This humanized murine model provides a mechanistic link to explain how the mucosal intolerance to a dietary protein can lead to insulitis in the presence of partial regulatory T cell deficiency. PMID:21911598

Hall effect at a tunable metal-insulator transition

NASA Astrophysics Data System (ADS)

Teizer, W.; Hellman, F.; Dynes, R. C.

2003-03-01

Using a rotating magnetic field, the Hall effect in three-dimensional amorphous GdxSi1-x has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient R0 is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. R0 diverges at the metal-insulator transition, and displays critical behavior with exponent -1 [R0˜(H-HC)-1]. This dependence is interpreted as a linear decrease in the density of mobile carriers n˜R-10˜H-HC, indicative of the dominant influence of interaction effects.

Metal-Insulator Transition in W-doped VO2 Nanowires

NASA Astrophysics Data System (ADS)

Long, Gen; Parry, James; Whittaker, Luisa; Banerjee, Sarbajit; Zeng, Hao

2010-03-01

We report a systematic study of the metal-insulator transition in W-doped VO2 nanowires. Magnetic susceptibility were measured for a bulk amount of VO2 nanowire powder. The susceptibility shows a sharp drop with decreasing temperature corresponding to the metal-insulator transition. The transition shows large temperature hysteresis for cooling and heating. With increasing doping concentration, the transition temperatures decreases systematically from 320 K to 275K. Charge transport measurements on the same nanowires showed similar behavior. XRD and TEM measurements were taken to further determine the structure of the materials in study.

Electronic structure and insulating gap in epitaxial VO 2 polymorphs

DOE PAGES

Lee, Shinbuhm; Meyer, Tricia L.; Sohn, Changhee; ...

2015-12-24

Here, determining the origin of the insulating gap in the monoclinic VO 2(M1) is a long-standing issue. The difficulty of this study arises from the simultaneous occurrence of structural and electronic transitions upon thermal cycling. Here, we compare the electronic structure of the M1 phase with that of single crystalline insulating VO 2(A) and VO 2(B) thin films to better understand the insulating phase of VO 2. As these A and B phases do not undergo a structural transition upon thermal cycling, we comparatively study the origin of the gap opening in the insulating VO 2 phases. By x-ray absorptionmore » and optical spectroscopy, we find that the shift of unoccupied t 2g orbitals away from the Fermi level is a common feature, which plays an important role for the insulating behavior in VO 2 polymorphs. The distinct splitting of the half-filled t 2g orbital is observed only in the M1 phase, widening the bandgap up to ~0.6 eV. Our approach of comparing all three insulating VO 2 phases provides insight into a better understanding of the electronic structure and the origin of the insulating gap in VO 2.« less

Self-Healable Electrical Insulation for High Voltage Applications

NASA Technical Reports Server (NTRS)

Williams, Tiffany S.

2017-01-01

Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

Mott metal-insulator transition in the doped Hubbard-Holstein model

NASA Astrophysics Data System (ADS)

Kurdestany, Jamshid Moradi; Satpathy, S.

2017-08-01

Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

Heat Flow Measurement and Analysis of Thermal Vacuum Insulation

NASA Astrophysics Data System (ADS)

Laa, C.; Hirschl, C.; Stipsitz, J.

2008-03-01

A new kind of calorimeter has been developed at Austrian Aerospace to measure specific material parameters needed for the analysis of thermal vacuum insulation. A detailed description of the measuring device and the measurement results will be given in this paper. This calorimeter facility allows to measure the heat flow through the insulation under vacuum conditions in a wide temperature range from liquid nitrogen to ambient. Both boundary temperatures can be chosen within this range. Furthermore the insulation can be characterized at high vacuum or under degraded vacuum, the latter is simulated by using helium or nitrogen gas. The mechanisms of heat transfer have been investigated, namely infrared radiation between the reflective layers of the insulation and conduction through the interleaving spacer material. A mathematical description of the heat flow through the insulation has been derived. Based on this, the heat flow for a typical insulation material has been calculated by finite element analysis by use of the sotware tool Ansys®. Such a transient calculation is needed to determine the time to reach thermal equilibrium, which is mandatory for a proper interpretation and evaluation of the measurement. The new insulation measurement results combined with the proposed type of analysis can be applied to better understand the thermal behavior of any kind of cryogenic system.

Polyolefin-Based Aerogels

NASA Technical Reports Server (NTRS)

Lee, Je Kyun; Gould, George

2012-01-01

An organic polybutadiene (PB) rubberbased aerogel insulation material was developed that will provide superior thermal insulation and inherent radiation protection, exhibiting the flexibility, resiliency, toughness, and durability typical of the parent polymer, yet with the low density and superior insulation properties associated with the aerogels. The rubbery behaviors of the PB rubber-based aerogels are able to overcome the weak and brittle nature of conventional inorganic and organic aerogel insulation materials. Additionally, with higher content of hydrogen in their structure, the PB rubber aerogels will also provide inherently better radiation protection than those of inorganic and carbon aerogels. Since PB rubber aerogels also exhibit good hydrophobicity due to their hydrocarbon molecular structure, they will provide better performance reliability and durability as well as simpler, more economic, and environmentally friendly production over the conventional silica or other inorganic-based aerogels, which require chemical treatment to make them hydrophobic. Inorganic aerogels such as silica aerogels demonstrate many unusual and useful properties. There are several strategies to overcoming the drawbacks associated with the weakness and brittleness of silica aerogels. Development of the flexible fiber-reinforced silica aerogel composite blanket has proven one promising approach, providing a conveniently fielded form factor that is relatively robust toward handling in industrial environments compared to silica aerogel monoliths. However, the flexible silica aerogel composites still have a brittle, dusty character that may be undesirable, or even intolerable, in certain applications. Although the cross-linked organic aerogels such as resorcinol-formaldehyde (RF), polyisocyanurate, and cellulose aerogels show very high impact strength, they are also very brittle with little elongation (i.e., less rubbery). Also, silica and carbon aerogels are less efficient radiation shielding materials due to their lower content of hydrogen element. The present invention relates to maleinized polybutadiene (or polybutadiene adducted with maleic anhydride)- based aerogel monoliths and composites, and the methods for preparation. Hereafter, they are collectively referred to as polybutadiene aerogels. Specifically, the polybutadiene aerogels of the present invention are prepared by mixing a maleinized polybutadiene resin, a hardener containing a maleic anhydride reactive group, and a catalyst in a suitable solvent, and maintaining the mixture in a quiescent state for a sufficient period of time to form a polymeric gel. After aging at elevated temperatures for a period of time to provide uniformly stronger wet gels, the micro porous maleinized polybutadiene- based aerogel is then obtained by removing interstitial solvent by supercritical drying. The mesoporous maleinized polybutadiene-based aerogels contain an open-pore structure, which provides inherently hydrophobic, flexible, nearly unbreakable, less dusty aerogels with excellent thermal and physical properties. The materials can be used as thermal and acoustic insulation, radiation shielding, and vibration-damping materials. The organic PB-based rubber aerogels are very flexible, no-dust, and hydrophobic organics that demonstrated the following ranges of typical properties: densities of 0.08 to 0.255 grams per cubic centimeters, shrinkage factor (raerogel/rtarget) = 1.2 to 2.84, and thermal conductivity values of 20.0 to 35.0 mW/m-K.

Development of design allowables data for adhesives for attaching reusables surface insulation, addendum 1A

NASA Technical Reports Server (NTRS)

Owen, H. P.; Carroll, M. T.

1973-01-01

The task consisted of conducting mechanical and thermal tests to establish design allowables data on a new room temperature vulcanizing (RTV) silicone adhesive, X3-6004. Low modulus, coupled with relatively low density and good low-temperature properties of this adhesive, places it in contention as a candidate for attaching reusable surface insulation on the space shuttle. Data obtained show that the modulus values of X3-6004 are significantly lower than those of RTV-560 and the other three adhesives characterized at test temperatures from 550 to -175 F. At -175, -200 and -270 F, the modulus of X3-6004 is approximately the same as GE RTV-560 and the other three silicone adhesives. The X3-6004 adhesive exhibits good processing properties. It has a 12 percent lower density than RTV-560. Although lower in overall strength properties as compared to the other adhesives in the program, X3-6004 has adequate adhesion to 2024T81 aluminum to compete as an adhesive for attaching reusable surface insulation. It does exhibit some tendency to revert and soften at temperatures above 350 F when in a confined area.

Tetragonal bismuth bilayer: A stable and robust quantum spin hall insulator

DOE PAGES

Kou, Liangzhi; Tan, Xin; Ma, Yandong; ...

2015-11-23

In this study, topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here we predict by first-principles calculations a two-dimensional (2D) TI, also known as a quantum spin Hall (QSH) insulator, in a tetragonal bismuth bilayer (TB-Bi) structure that is dynamically and thermally stable based on phonon calculations and finite-temperature molecular dynamics simulations. Density functional theory and tight-binding calculations reveal a band inversion among the Bi-p orbits driven by the strong intrinsic spin–orbit coupling, producing a largemore » nontrivial band gap, which can be effectively tuned by moderate strains. The helical gapless edge states exhibit a linear dispersion with a high Fermi velocity comparable to that of graphene, and the QSH phase remains robust on a NaCl substrate. These remarkable properties place TB-Bi among the most promising 2D TIs for high-speed spintronic devices, and the present results provide insights into the intriguing QSH phenomenon in this new Bi structure and offer guidance for its implementation in potential applications.« less

Insulation effect on thermal stability of Coated Conductors wires in liquid nitrogen

NASA Astrophysics Data System (ADS)

Rubeli, Thomas; Dutoit, Bertrand; Martynova, Irina; Makarevich, Artem; Molodyk, Alexander; Samoilenkov, Sergey

2017-02-01

Superconducting wires are not perfectly homogeneous in term of critical current as well as stabilization. In resistive fault current limiter applications this could lead to hot spots if the fault current is only slightly above the nominal current of the device. Increasing stabilization by using thicker silver coating for example may prevent this problem but this method implies longer wire length to maintain the same impedance during a fault. Very efficient cooling in another way to prevent hot spots, this can be achieved in nucleate boiling regime. Optimal insulation can be used to prevent film boiling regime, staying in nucleate boiling regime in a much broader temperature range. In this work a novel technique is used to monitor in real time the temperature of the wire during the quench. Using this method several increasing insulation thicknesses are tested, measuring for each the heat exchange rate to the nitrogen bath. Exchange rate measurements are made in quasistatic regime and during the re-cooling of the wire. SuperOx wires provided with different insulation thicknesses exhibit an excellent stability, far above a bare wire. On the other side, for very thick insulations the stability gain is lost. Re-cooling speeds dependency on insulation thicknesses is measured too.

Towards Mott design by δ-doping of strongly correlated titanates

NASA Astrophysics Data System (ADS)

Lechermann, Frank; Obermeyer, Michael

2015-04-01

Doping the distorted-perovskite Mott insulators LaTiO3 and GdTiO3 with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge self-consistent combination of density functional theory with dynamical mean-field theory reveals layer- and temperature-dependent multi-orbital metal-insulator transitions. An orbital-selective metallic layer at the interface dissolves via an orbital-polarized doped-Mott state into an orbital-ordered insulating regime beyond the two conducting TiO2 layers. We find large differences in the scattering behavior within the latter. Breaking the spin symmetry in δ-doped GdTiO3 results in blocks of ferromagnetic itinerant and ferromagnetic Mott-insulating layers that are coupled antiferromagnetically.

Positron Annihilation in Insulating Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asoka-Kumar, P; Sterne, PA

2002-10-18

We describe positron results from a wide range of insulating materials. We have completed positron experiments on a range of zeolite-y samples, KDP crystals, alkali halides and laser damaged SiO{sub 2}. Present theoretical understanding of positron behavior in insulators is incomplete and our combined theoretical and experimental approach is aimed at developing a predictive understanding of positrons and positronium annihilation characteristics in insulators. Results from alkali halides and alkaline-earth halides show that positrons annihilate with only the halide ions, with no apparent contribution from the alkali or alkaline-earth cations. This contradicts the results of our existing theory for metals, whichmore » predicts roughly equal annihilation contributions from cation and anion. We also present result obtained using Munich positron microprobe on laser damaged SiO{sub 2} samples.« less

Finite element analysis of time-independent superconductivity. Ph.D. Thesis Final Report

NASA Technical Reports Server (NTRS)

Schuler, James J.

1993-01-01

The development of electromagnetic (EM) finite elements based upon a generalized four-potential variational principle is presented. The use of the four-potential variational principle allows for downstream coupling of EM fields with the thermal, mechanical, and quantum effects exhibited by superconducting materials. The use of variational methods to model an EM system allows for a greater range of applications than just the superconducting problem. The four-potential variational principle can be used to solve a broader range of EM problems than any of the currently available formulations. It also reduces the number of independent variables from six to four while easily dealing with conductor/insulator interfaces. This methodology was applied to a range of EM field problems. Results from all these problems predict EM quantities exceptionally well and are consistent with the expected physical behavior.

Guided wave opto-acoustic device

DOEpatents

Jarecki, Jr., Robert L.; Rakich, Peter Thomas; Camacho, Ryan; Shin, Heedeuk; Cox, Jonathan Albert; Qiu, Wenjun; Wang, Zheng

2016-02-23

The various technologies presented herein relate to various hybrid phononic-photonic waveguide structures that can exhibit nonlinear behavior associated with traveling-wave forward stimulated Brillouin scattering (forward-SBS). The various structures can simultaneously guide photons and phonons in a suspended membrane. By utilizing a suspended membrane, a substrate pathway can be eliminated for loss of phonons that suppresses SBS in conventional silicon-on-insulator (SOI) waveguides. Consequently, forward-SBS nonlinear susceptibilities are achievable at about 3000 times greater than achievable with a conventional waveguide system. Owing to the strong phonon-photon coupling achievable with the various embodiments, potential application for the various embodiments presented herein cover a range of radiofrequency (RF) and photonic signal processing applications. Further, the various embodiments presented herein are applicable to applications operating over a wide bandwidth, e.g. 100 MHz to 50 GHz or more.

Topological phase in a two-dimensional metallic heavy-fermion system

NASA Astrophysics Data System (ADS)

Yoshida, Tsuneya; Peters, Robert; Fujimoto, Satoshi; Kawakami, Norio

2013-04-01

We report on a topological insulating state in a heavy-fermion system away from half filling, which is hidden within a ferromagnetic metallic phase. In this phase, the cooperation of the RKKY interaction and the Kondo effect, together with the spin-orbit coupling, induces a spin-selective gap, bringing about topologically nontrivial properties. This topological phase is robust against a change in the chemical potential in a much wider range than the gap size. We analyze these remarkable properties by using dynamical mean field theory and the numerical renormalization group. Its topological properties support a gapless chiral edge mode, which exhibits a non-Tomonaga-Luttinger liquid behavior due to the coupling with bulk ferromagnetic spin fluctuations. We also propose that the effects of the spin fluctuations on the edge mode can be detected via the NMR relaxation time measurement.

Intrinsic superconducting transport properties of ultra-thin Fe1+ y Te0.6Se0.4 microbridges

NASA Astrophysics Data System (ADS)

Sun, HanCong; Lv, YangYang; Lu, DaChuan; Yang, ZhiBao; Zhou, XianJing; Hao, LuYao; Xing, XiangZhuo; Zou, Wei; Li, Jun; Shi, ZhiXiang; Xu, WeiWei; Wang, HuaBing; Wu, PeiHeng

2017-11-01

We investigated the superconducting properties of Fe1+ y Te0.6Se0.4 single-crystalline microbridges with a width of 4 μm and thicknesses ranging from 20.8 to 136.2 nm. The temperature-dependent in-plane resistance of the bridges exhibited a type of metal-insulator transition in the normal state. The critical current density ( J c) of the microbridge with a thickness of 136.2 nm was 82.3 kA/cm2 at 3K and reached 105 kA/cm2 after extrapolation to T = 0 K. The current versus voltage characteristics of the microbridges showed a Josephson-like behavior with an obvious hysteresis. These results demonstrate the potential application of ultra-thin Fe-based microbridges in superconducting electronic devices such as bolometric detectors.

High density load bearing insulation peg

DOEpatents

Nowobilski, Jeffert J.; Owens, William J.

1985-01-01

A high density peg which can support a large load and exhibits excellent thermal resistance produced by a method wherein the peg is made in compliance with specified conditions of time, temperature and pressure.

Characterization of Microporous Insulation, Microsil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, R.

Microsil microporous insulation has been characterized by Lawrence Livermore National Laboratory for possible use in structural and thermal applications in the DPP-1 design. Qualitative test results have provided mechanical behavioral characteristics for DPP-1 design studies and focused on the material behavioral response to being crushed, cyclically loaded, and subjected to vibration for a confined material with an interference fit or a radial gap. Quantitative test results have provided data to support the DPP-1 FEA model analysis and verification and were used to determine mechanical property values for the material under a compression load. The test results are documented within thismore » report.« less

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

NASA Astrophysics Data System (ADS)

Karmakar, Supriya; Suarez, Ernesto; Jain, Faquir C.

2011-08-01

This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high- κ gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

Electronic structure properties of UO2 as a Mott insulator

NASA Astrophysics Data System (ADS)

Sheykhi, Samira; Payami, Mahmoud

2018-06-01

In this work using the density functional theory (DFT), we have studied the structural, electronic and magnetic properties of uranium dioxide with antiferromagnetic 1k-, 2k-, and 3k-order structures. Ordinary approximations in DFT, such as the local density approximation (LDA) or generalized gradient approximation (GGA), usually predict incorrect metallic behaviors for this strongly correlated electron system. Using Hubbard term correction for f-electrons, LDA+U method, as well as using the screened Heyd-Scuseria-Ernzerhof (HSE) hybrid functional for the exchange-correlation (XC), we have obtained the correct ground-state behavior as an insulator, with band gaps in good agreement with experiment.

Phase coherent transport in hybrid superconductor-topological insulator devices

NASA Astrophysics Data System (ADS)

Finck, Aaron

2015-03-01

Heterostructures of superconductors and topological insulators are predicted to host unusual zero energy bound states known as Majorana fermions, which can robustly store and process quantum information. Here, I will discuss our studies of such heterostructures through phase-coherent transport, which can act as a unique probe of Majorana fermions. We have extensively explored topological insulator Josephson junctions through SQUID and single-junction diffraction patterns, whose unusual behavior give evidence for low-energy Andreev bound states. In topological insulator devices with closely spaced normal and superconducting leads, we observe prominent Fabry-Perot oscillations, signifying gate-tunable, quasi-ballistic transport that can elegantly interact with Andreev reflection. Superconducting disks deposited on the surface of a topological insulator generate Aharonov-Bohm-like oscillations, giving evidence for unusual states lying near the interface between the superconductor and topological insulator surface. Our results point the way towards sophisticated interferometers that can detect and read out the state of Majorana fermions in topological systems. This work was done in collaboration with Cihan Kurter, Yew San Hor, and Dale Van Harlingen. We acknowledge funding from Microsoft Project Q.

Intrinsic Josephson effects in the magnetic superconductor RuSr2GdCu2O8.

PubMed

Nachtrab, T; Koelle, D; Kleiner, R; Bernhard, C; Lin, C T

2004-03-19

We have measured interlayer current transport in small-sized RuSr2GdCu2O8 single crystals. We find a clear intrinsic Josephson effect showing that the material acts as a natural superconductor-insulator-ferromagnet-insulator-superconductor superlattice. Thus far, we detected no unconventional behavior due to the magnetism of the RuO2 layers.

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films

NASA Astrophysics Data System (ADS)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-03-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films ( x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR ( 36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies ( δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.

Multifunctional Nanofluids with 2D Nanosheets for thermal management and tribological applications

NASA Astrophysics Data System (ADS)

Taha Tijerina, Jose Jaime

Conventional heat-transfer fluids such as water, ethylene glycol, standard oils and other lubricants are typically low-efficiency heat-transfer fluids. Thermal management plays a critical factor in many applications where these fluids can be used, such as in motors/engines, solar cells, biopharmaceuticals, fuel cells, high voltage power transmission systems, micro/nanoelectronics mechanical systems (MEMS/NEMS), and nuclear cooling among others. These insulating fluids require superb filler dispersion, high thermal conduction, and for certain applications as in electrical/electronic devices also electrical insulation. The miniaturization and high efficiency of electrical/electronic devices in these fields demand successful heat management and energy-efficient fluid-based heat-transfer systems. Recent advances in layered materials enable large scale synthesis of various two-dimensional (2D) structures. Some of these 2D materials are good choices as nanofillers in heat transfer fluids; mainly due to their inherent high thermal conductivity (TC) and high surface area available for thermal energy transport. Among various 2D-nanostructures, hexagonal boron nitride (h-BN) and graphene (G) exhibit versatile properties such as outstanding TC, excellent mechanical stability, and remarkable chemical inertness. The following research, even though investigate various conventional fluids, will focus on dielectric insulating nanofluids (mineral oil -- MO) with significant thermal performance. It is presented the plan for synthesis and characterization of stable high-thermal conductivity nanofluids using 2D-nanostructures of h-BN, which will be further incorporated at diverse filler concentrations to conventional fluids for cooling applications, without compromising its electrical insulating property. For comparison, properties of h-BN based fluids are compared with conductive fillers such as graphene; where graphene has similar crystal structure of h-BN and also has similar bulk thermal conductivity. Moreover, bot h-BN and graphene are exfoliated through the same method. In essence, this project, for the first time, unravels the behavior of the exfoliated h-BN effect on reinforced conventional fluids under the influence of atomistic scale structures (particularly, electrically insulating and lubricant/cutting fluids), thereby linking the physical, electrical and mechanical properties of these nanoscale materials. The innovative experimental approach is expected to result in de novo strategies for introducing these systems for new concepts and variables to engineer nanofluid properties suitable for very promising industrial applications.

Evaluating Thermally Damaged Polyimide Insulated Wiring (MIL-W-81381) with Ultrasound

NASA Technical Reports Server (NTRS)

Madaras, Eric I.; Anastasi, Robert F.

2002-01-01

A series of experiments to investigate the use of ultrasound for measuring wire insulation have been conducted. Initial laboratory tests were performed on MIL-W-81381/7,/12, and /21 aviation wire, a wire that has polyimide (Kapton Registered Trademark) layers for insulation. Samples of this wiring were exposed to 370C temperatures for different periods of time to induce a range of thermal damage. For each exposure, 12 samples of each gauge (12, 16, and 20 gauges) were processed. The velocity of the lowest order axisymmetric ultrasonic guided mode, a mode that is sensitive to the geometry and stiffness of the wire conductor and insulation, was measured. The phase velocity for the 20-gauge MIL-W-81381/7 wire had a baseline value of 3023 +/- 78 m/s. After exposure to the high temperatures, the wire's phase velocity rapidly increased, and reached an asymptotic value of 3598 +/- 20 m/s after 100 hours exposure. Similar behavior was measured for the 16 gauge MIL-W-81381/21 wire and 12 gauge MIL-W-81381/12 wire which had baseline values of 3225 +/- 22 m/s and 3403 +/- 33 m/s respectively, and reached asymptotic values of 3668 +/- 19 m/s, and 3679 +/- 42 m/s respectively. These measured velocity changes represent changes of 19, 14, and 8 percent respectively for the 20, 16, and 12 gauge wires. Finally, some results for a wire with an ethylene tetrafluoroethylene insulation are reported. Qualitatively similar behaviors are noted ultrasonically.

Anomalous High-Energy Waterfall-Like Electronic Structure in 5 d Transition Metal Oxide Sr2IrO4 with a Strong Spin-Orbit Coupling

NASA Astrophysics Data System (ADS)

Liu, Yan; Yu, Li; Jia, Xiaowen; Zhao, Jianzhou; Weng, Hongming; Peng, Yingying; Chen, Chaoyu; Xie, Zhuojin; Mou, Daixiang; He, Junfeng; Liu, Xu; Feng, Ya; Yi, Hemian; Zhao, Lin; Liu, Guodong; He, Shaolong; Dong, Xiaoli; Zhang, Jun; Xu, Zuyan; Chen, Chuangtian; Cao, Gang; Dai, Xi; Fang, Zhong; Zhou, X. J.

2015-08-01

The low energy electronic structure of Sr2IrO4 has been well studied and understood in terms of an effective Jeff = 1/2 Mott insulator model. However, little work has been done in studying its high energy electronic behaviors. Here we report a new observation of the anomalous high energy electronic structure in Sr2IrO4. By taking high-resolution angle-resolved photoemission measurements on Sr2IrO4 over a wide energy range, we have revealed for the first time that the high energy electronic structures show unusual nearly-vertical bands that extend over a large energy range. Such anomalous high energy behaviors resemble the high energy waterfall features observed in the cuprate superconductors. While strong electron correlation plays an important role in producing high energy waterfall features in the cuprate superconductors, the revelation of the high energy anomalies in Sr2IrO4, which exhibits strong spin-orbit coupling and a moderate electron correlation, points to an unknown and novel route in generating exotic electronic excitations.

Anomalous High-Energy Waterfall-Like Electronic Structure in 5 d Transition Metal Oxide Sr2IrO4 with a Strong Spin-Orbit Coupling.

PubMed

Liu, Yan; Yu, Li; Jia, Xiaowen; Zhao, Jianzhou; Weng, Hongming; Peng, Yingying; Chen, Chaoyu; Xie, Zhuojin; Mou, Daixiang; He, Junfeng; Liu, Xu; Feng, Ya; Yi, Hemian; Zhao, Lin; Liu, Guodong; He, Shaolong; Dong, Xiaoli; Zhang, Jun; Xu, Zuyan; Chen, Chuangtian; Cao, Gang; Dai, Xi; Fang, Zhong; Zhou, X J

2015-08-12

The low energy electronic structure of Sr2IrO4 has been well studied and understood in terms of an effective Jeff = 1/2 Mott insulator model. However, little work has been done in studying its high energy electronic behaviors. Here we report a new observation of the anomalous high energy electronic structure in Sr2IrO4. By taking high-resolution angle-resolved photoemission measurements on Sr2IrO4 over a wide energy range, we have revealed for the first time that the high energy electronic structures show unusual nearly-vertical bands that extend over a large energy range. Such anomalous high energy behaviors resemble the high energy waterfall features observed in the cuprate superconductors. While strong electron correlation plays an important role in producing high energy waterfall features in the cuprate superconductors, the revelation of the high energy anomalies in Sr2IrO4, which exhibits strong spin-orbit coupling and a moderate electron correlation, points to an unknown and novel route in generating exotic electronic excitations.

Growth and characterization of binary and pseudo-binary 3-5 compounds exhibiting non-linear optical behavior. Undergraduate research opportunities in microgravity science and technology

NASA Technical Reports Server (NTRS)

Witt, August F.

1992-01-01

In line with the specified objectives, a Bridgman-type growth configuration in which unavoidable end effects - conventionally leading to growth interface relocation - are compensated by commensurate input-power changes is developed; the growth rate on a microscale is predictable and unaffected by changes in heat transfer conditions. To permit quantitative characterization of the growth furnace cavity (hot-zone), a 3-D thermal field mapping technique, based on the thermal image, is being tested for temperatures up to 1100 C. Computational NIR absorption analysis was modified to now permit characterization of semi-insulating single crystals. Work on growth and characterization of bismuth-silicate was initiated. Growth of BSO (B12SiO20) for seed material by the Czochralski technique is currently in progress. Undergraduate research currently in progress includes: ground based measurements of the wetting behavior (contact angles) of semiconductor melts on substrates consisting of potential confinement materials for solidification experiments in a reduced gravity environment. Hardware modifications required for execution of the wetting experiments in a KC-135 facility are developed.

Mott-to-Goodenough insulator-insulator transition in LiVO2

NASA Astrophysics Data System (ADS)

Subedi, Alaska

2017-06-01

I critically examine Goodenough's explanation for the experimentally observed phase transition in LiVO2 using microscopic calculations based on density functional and dynamical mean field theories. The high-temperature rhombohedral phase exhibits both magnetic and dynamical instabilities. Allowing a magnetic solution for the rhombohedral structure does not open an insulating gap, and an explicit treatment of the on-site Coulomb U interaction is needed to stabilize an insulating rhombohedral phase. The non-spin-polarized phonon dispersions of the rhombohedral phase show two unstable phonon modes at the wave vector (1/3 ,-1/3 ,0 ) that corresponds to the experimentally observed trimer forming instability. A full relaxation of the supercell corresponding to this instability yields a nonmagnetic state containing V3 trimers. These results are consistent with Goodenough's suggestion that the high-temperature phase is in the localized-electron regime and the transition to the low-temperature phase in the itinerant-electron regime is driven by V-V covalency.

Anomalous Dirac point transport due to extended defects in bilayer graphene.

PubMed

Shallcross, Sam; Sharma, Sangeeta; Weber, Heiko B

2017-08-24

Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the distribution of conductivities is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.In seemingly indistinguishable bilayer graphene samples, two distinct transport regimes, insulating and metallic, have been identified experimentally. Here, the authors demonstrate that these two states originate from the interplay between extended defects and evanescent modes at the Dirac point.

Disappearance of nodal gap across the insulator-superconductor transition in a copper-oxide superconductor.

PubMed

Peng, Yingying; Meng, Jianqiao; Mou, Daixiang; He, Junfeng; Zhao, Lin; Wu, Yue; Liu, Guodong; Dong, Xiaoli; He, Shaolong; Zhang, Jun; Wang, Xiaoyang; Peng, Qinjun; Wang, Zhimin; Zhang, Shenjin; Yang, Feng; Chen, Chuangtian; Xu, Zuyan; Lee, T K; Zhou, X J

2013-01-01

The parent compound of the copper-oxide high-temperature superconductors is a Mott insulator. Superconductivity is realized by doping an appropriate amount of charge carriers. How a Mott insulator transforms into a superconductor is crucial in understanding the unusual physical properties of high-temperature superconductors and the superconductivity mechanism. Here we report high-resolution angle-resolved photoemission measurement on heavily underdoped Bi₂Sr₂-xLaxCuO(₆+δ) system. The electronic structure of the lightly doped samples exhibit a number of characteristics: existence of an energy gap along the nodal direction, d-wave-like anisotropic energy gap along the underlying Fermi surface, and coexistence of a coherence peak and a broad hump in the photoemission spectra. Our results reveal a clear insulator-superconductor transition at a critical doping level of ~0.10 where the nodal energy gap approaches zero, the three-dimensional antiferromagnetic order disappears, and superconductivity starts to emerge. These observations clearly signal a close connection between the nodal gap, antiferromagnetism and superconductivity.

Nature of superconductor-insulator transition at LaAlO{sub 3}/SrTiO{sub 3} interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohanta, N., E-mail: nmohanta@phy.iitkgp.ernet.in; Taraphder, A.; Centre for Theoretical Studies, Indian Institute of Technology Kharagpur, W. B. 721302

2015-05-15

The two-dimensional electron liquid, at the interface between two band insulators LaAlO{sub 3} and SrTiO{sub 3}, exhibits novel, unconventional superconductivity below 200 mK. One of the remarkable properties of the two-dimensional superconductor is its fantastic tunability by external parameters such as gate-voltage or magnetic field. We study the superconductor to insulator transition induced by gate-voltage by employing a self-consistent, mean-field Bogoliubov-de Gennes treatment based on an effective model. We show that the non-monotonic behaviour of the superconductivity with respect to gate-voltage is intrinsically due to the Rashba spin-orbit coupling. With increasing gate-voltage both the electron concentration and Rashba spin-orbit splittingmore » increases. Elevated electron filling boosts superconductivity whereas enhanced spin-orbit splitting annihilates electron-pairing. The non-monotonicity is a result of this competition. The device application of the superconductor-insulator transition in this interface is discussed.« less

Bidirectional negative differential thermal resistance in three-segment Frenkel-Kontorova lattices.

PubMed

Ou, Ya-Li; Lu, Shi-Cai; Hu, Cai-Tian; Ai, Bao-Quan

2016-12-14

By coupling three nonlinear 1D lattice segments, we demonstrate a thermal insulator model, where the system acts like an insulator for large temperature bias and a conductor for very small temperature bias. We numerically investigate the parameter range of the thermal insulator and find that the nonlinear response (the role of on-site potential), the weakly coupling interaction between each segment, and the small system size collectively contribute to the appearance of bidirectional negative differential thermal resistance (BNDTR). The corresponding exhibition of BNDTR can be explained in terms of effective phonon-band shifts. Our results can provide a new perspective for understanding the microscopic mechanism of negative differential thermal resistance and also would be conducive to further developments in designing and fabricating thermal devices and functional materials.

Experimental evidence consistent with a magnon Nernst effect in the antiferromagnetic insulator MnPS3

NASA Astrophysics Data System (ADS)

Shiomi, Y.; Takashima, R.; Saitoh, E.

2017-10-01

A magnon Nernst effect, an antiferromagnetic analog of the magnon Hall effect in ferromagnetic insulators, has been studied experimentally for the layered antiferromagnetic insulator MnPS3 in contact with two Pt strips. Thermoelectric voltage in the Pt strips grown on MnPS3 single crystals exhibits nonmonotonic temperature dependence at low temperatures, which is unlikely to be explained by electronic origins in Pt but can be ascribed to the inverse spin Hall voltage induced by a magnon Nernst effect. Control of antiferromagnetic domains in the MnPS3 crystal by magnetoelectric cooling is found to modulate the low-temperature thermoelectric voltage in Pt, which is evidence consistent with the emergence of the magnon Nernst effect in Pt-MnPS3 hybrid structures.

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

NASA Astrophysics Data System (ADS)

Hyung, Gun Woo; Park, Jaehoon; Koo, Ja Ryong; Choi, Kyung Min; Kwon, Sang Jik; Cho, Eou Sik; Kim, Yong Seog; Kim, Young Kwan

2012-03-01

Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with a band gap energy of about 3.37 eV. The fabricated ZnO TFT exhibits a field-effect mobility of 0.38 cm2/Vs and a threshold voltage of 0.2 V. The hysteresis of the device is mainly caused by trapped electrons at the c-PVA/ZnO interface, whereas the positive threshold voltage shift occurs as a consequence of constant positive gate bias stress after 5000 s due to an electron injection from the ZnO film into the c-PVA insulator.

Theoretical and experimental investigation of magnetic field related helium leak in helium vessel of a large superconducting magnet

NASA Astrophysics Data System (ADS)

Bhattachryya, Pranab; Gupta, Anjan Dutta; Dhar, S.; Sarma, P. R.; Mukherjee, Paramita

2017-06-01

The helium vessel of the superconducting cyclotron (SCC) at the Variable Energy Cyclotron centre (VECC), Kolkata shows a gradual loss of insulation vacuum from 10-7 mbar to 10-4 mbar with increasing coil current in the magnet. The insulation vacuum restores back to its initial value with the withdrawal of current. The origin of such behavior has been thought to be related to the electromagnetic stress in the magnet. The electromagnetic stress distribution in the median plane of the helium vessel was studied to figure out the possible location of the helium leak. The stress field from the possible location was transferred to a simplified 2D model with different leak geometries to study the changes in conductance with coil current. The leak rate calculated from the changes in the leak geometry was compared with the leak rate calculated from the experimental insulation vacuum degradation behavior to estimate the initial leak shape and size.

Mechanical topological insulator in zero dimensions

NASA Astrophysics Data System (ADS)

Lera, Natalia; Alvarez, J. V.

2018-04-01

We study linear vibrational modes in finite isostatic Maxwell lattices, mechanical systems where the number of degrees of freedom matches the number of constraints. Recent progress in topological mechanics exploits the nontrivial topology of BDI class Hamiltonians in one dimenson and arising topological floppy modes at the edges. A finite frame, or zero-dimensional system, also exhibits a nonzero topological index according to the classification table. We construct mechanical insulating models in zero dimensions that complete the BDI classification in the available real space dimensions. We compute and interpret its nontrivial invariant Z2.

Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator.

PubMed

Balcı, Erdem; Akkuş, Ünal Özden; Berber, Savas

2018-04-18

The electronic structures of Si and Ge substitutionally doped Sc 2 C(OH) 2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc 2 C(OH) 2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator

NASA Astrophysics Data System (ADS)

Balcı, Erdem; Özden Akkuş, Ünal; Berber, Savas

2018-04-01

The electronic structures of Si and Ge substitutionally doped Sc2C(OH)2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc2C(OH)2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

Quantum quench in one dimension: coherent inhomogeneity amplification and "supersolitons".

PubMed

Foster, Matthew S; Yuzbashyan, Emil A; Altshuler, Boris L

2010-09-24

We study a quantum quench in a 1D system possessing Luttinger liquid (LL) and Mott insulating ground states before and after the quench, respectively. We show that the quench induces power law amplification in time of any particle density inhomogeneity in the initial LL ground state. The scaling exponent is set by the fractionalization of the LL quasiparticle number relative to the insulator. As an illustration, we consider the traveling density waves launched from an initial localized density bump. While these waves exhibit a particular rigid shape, their amplitudes grow without bound.

Emergence, evolution, and control of multistability in a hybrid topological quantum/classical system.

PubMed

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2018-03-01

We present a novel class of nonlinear dynamical systems-a hybrid of relativistic quantum and classical systems and demonstrate that multistability is ubiquitous. A representative setting is coupled systems of a topological insulator and an insulating ferromagnet, where the former possesses an insulating bulk with topologically protected, dissipationless, and conducting surface electronic states governed by the relativistic quantum Dirac Hamiltonian and the latter is described by the nonlinear classical evolution of its magnetization vector. The interactions between the two are essentially the spin transfer torque from the topological insulator to the ferromagnet and the local proximity induced exchange coupling in the opposite direction. The hybrid system exhibits a rich variety of nonlinear dynamical phenomena besides multistability such as bifurcations, chaos, and phase synchronization. The degree of multistability can be controlled by an external voltage. In the case of two coexisting states, the system is effectively binary, opening a door to exploitation for developing spintronic memory devices. Because of the dissipationless and spin-momentum locking nature of the surface currents of the topological insulator, little power is needed for generating a significant current, making the system appealing for potential applications in next generation of low power memory devices.

Emergence, evolution, and control of multistability in a hybrid topological quantum/classical system

NASA Astrophysics Data System (ADS)

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2018-03-01

We present a novel class of nonlinear dynamical systems—a hybrid of relativistic quantum and classical systems and demonstrate that multistability is ubiquitous. A representative setting is coupled systems of a topological insulator and an insulating ferromagnet, where the former possesses an insulating bulk with topologically protected, dissipationless, and conducting surface electronic states governed by the relativistic quantum Dirac Hamiltonian and the latter is described by the nonlinear classical evolution of its magnetization vector. The interactions between the two are essentially the spin transfer torque from the topological insulator to the ferromagnet and the local proximity induced exchange coupling in the opposite direction. The hybrid system exhibits a rich variety of nonlinear dynamical phenomena besides multistability such as bifurcations, chaos, and phase synchronization. The degree of multistability can be controlled by an external voltage. In the case of two coexisting states, the system is effectively binary, opening a door to exploitation for developing spintronic memory devices. Because of the dissipationless and spin-momentum locking nature of the surface currents of the topological insulator, little power is needed for generating a significant current, making the system appealing for potential applications in next generation of low power memory devices.

Finite-temperature fluid–insulator transition of strongly interacting 1D disordered bosons

PubMed Central

Michal, Vincent P.; Aleiner, Igor L.; Altshuler, Boris L.; Shlyapnikov, Georgy V.

2016-01-01

We consider the many-body localization–delocalization transition for strongly interacting one-dimensional disordered bosons and construct the full picture of finite temperature behavior of this system. This picture shows two insulator–fluid transitions at any finite temperature when varying the interaction strength. At weak interactions, an increase in the interaction strength leads to insulator → fluid transition, and, for large interactions, there is a reentrance to the insulator regime. It is feasible to experimentally verify these predictions by tuning the interaction strength with the use of Feshbach or confinement-induced resonances, for example, in 7Li or 39K. PMID:27436894

Reliability Studies of Ceramic Capacitors.

DTIC Science & Technology

1984-10-01

Virginia Polytechnic BaTiO 3 Ispecimens with variable composition, density and grain size to be used to make carrier concentration, mobility, thermoelectric ...low fields, observed steady-state electrical behavior will be controlled by the bulk properties of the insulator, the second phase of the conduction...carrier mobility E =applied field Note that bulk properties of the Insulator control the conduction process. From this equation it can be seen that a

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

NASA Astrophysics Data System (ADS)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB 6

DOE PAGES

Xiang, Z.; Lawson, B.; Asaba, T.; ...

2017-09-25

The Kondo insulator samarium hexaboride (SmB 6) has been intensely studied in recent years as a potential candidate of a strongly correlated topological insulator. One of the most exciting phenomena observed in SmB 6 is the clear quantum oscillations appearing in magnetic torque at a low temperature despite the insulating behavior in resistance. These quantum oscillations show multiple frequencies and varied effective masses. The origin of quantum oscillation is, however, still under debate with evidence of both two-dimensional Fermi surfaces and three-dimensional Fermi surfaces. Here, we carry out angle-resolved torque magnetometry measurements in a magnetic field up to 45 Tmore » and a temperature range down to 40 mK. With the magnetic field rotated in the (010) plane, the quantum oscillation frequency of the strongest oscillation branch shows a fourfold rotational symmetry. However, in the angular dependence of the amplitude of the same branch, this fourfold symmetry is broken and, instead, a twofold symmetry shows up, which is consistent with the prediction of a two-dimensional Lifshitz-Kosevich model. No deviation of Lifshitz-Kosevich behavior is observed down to 40 mK. Our results suggest the existence of multiple light-mass surface states in SmB 6, with their mobility significantly depending on the surface disorder level.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Yang; Yang, Liuxiang; Chen, Cheng-Chien

The spin-orbit Mott insulator Sr 3Ir 2O 7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr 3Ir 2O 7 up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions inmore » x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.« less

A novel no-insulation winding technique of high temperature-superconducting racetrack coil for rotating applications: A progress report in Korea university.

PubMed

Choi, Y H; Song, J B; Yang, D G; Kim, Y G; Hahn, S; Lee, H G

2016-10-01

This paper presents our recent progress on core technology development for a megawatt-class superconducting wind turbine generator supported by the international collaborative R&D program of the Korea Institute of Energy Technology Evaluation and Planning. To outperform the current high-temperature-superconducting (HTS) magnet technology in the wind turbine industry, a novel no-insulation winding technique was first proposed to develop the second-generation HTS racetrack coil for rotating applications. Here, we briefly report our recent studies on no-insulation (NI) winding technique for GdBCO coated conductor racetrack coils in the following areas: (1) Charging-discharging characteristics of no-insulation GdBCO racetrack coils with respect to external pressures applied to straight sections; (2) thermal and electrical stabilities of no-insulation GdBCO racetrack coils encapsulated with various impregnating materials; (3) quench behaviors of no-insulation racetrack coils wound with GdBCO conductor possessing various lamination layers; (4) electromagnetic characteristics of no-insulation GdBCO racetrack coils under time-varying field conditions. Test results confirmed that this novel NI winding technique was highly promising. It could provide development of a compact, mechanically dense, and self-protecting GdBCO magnet for use in real-world superconducting wind turbine generators.

A novel no-insulation winding technique of high temperature-superconducting racetrack coil for rotating applications: A progress report in Korea university

NASA Astrophysics Data System (ADS)

Choi, Y. H.; Song, J. B.; Yang, D. G.; Kim, Y. G.; Hahn, S.; Lee, H. G.

2016-10-01

This paper presents our recent progress on core technology development for a megawatt-class superconducting wind turbine generator supported by the international collaborative R&D program of the Korea Institute of Energy Technology Evaluation and Planning. To outperform the current high-temperature-superconducting (HTS) magnet technology in the wind turbine industry, a novel no-insulation winding technique was first proposed to develop the second-generation HTS racetrack coil for rotating applications. Here, we briefly report our recent studies on no-insulation (NI) winding technique for GdBCO coated conductor racetrack coils in the following areas: (1) Charging-discharging characteristics of no-insulation GdBCO racetrack coils with respect to external pressures applied to straight sections; (2) thermal and electrical stabilities of no-insulation GdBCO racetrack coils encapsulated with various impregnating materials; (3) quench behaviors of no-insulation racetrack coils wound with GdBCO conductor possessing various lamination layers; (4) electromagnetic characteristics of no-insulation GdBCO racetrack coils under time-varying field conditions. Test results confirmed that this novel NI winding technique was highly promising. It could provide development of a compact, mechanically dense, and self-protecting GdBCO magnet for use in real-world superconducting wind turbine generators.

High density load bearing insulation peg

DOEpatents

Nowobilski, J.J.; Owens, W.J.

1985-01-29

A high density peg is disclosed which can support a large load and exhibits excellent thermal resistance produced by a method wherein the peg is made in compliance with specified conditions of time, temperature and pressure. 4 figs.

Entanglement Entropy across the Superfluid-Insulator Transition: A Signature of Bosonic Criticality.

PubMed

Frérot, Irénée; Roscilde, Tommaso

2016-05-13

We study the entanglement entropy and entanglement spectrum of the paradigmatic Bose-Hubbard model, describing strongly correlated bosons on a lattice. The use of a controlled approximation-the slave-boson approach-allows us to study entanglement in all regimes of the model (and, most importantly, across its superfluid-Mott-insulator transition) at a minimal cost. We find that the area-law scaling of entanglement-verified in all the phases-exhibits a sharp singularity at the transition. The singularity is greatly enhanced when the transition is crossed at fixed, integer filling, due to a richer entanglement spectrum containing an additional gapless mode, which descends from the amplitude (Higgs) mode of the global excitation spectrum-while this mode remains gapped at the generic (commensurate-incommensurate) transition with variable filling. Hence, the entanglement properties contain a unique signature of the two different forms of bosonic criticality exhibited by the Bose-Hubbard model.

Electroconductive Composites from Polystyrene Block Copolymers and Cu–Alumina Filler

PubMed Central

Nadeem, QuratulAin; Fatima, Tasneem; Prinsen, Pepijn; ur Rehman, Aziz; Gill, Rohama; Mahmood, Rashid; Luque, Rafael

2016-01-01

Technological advancements and development of new materials may lead to the manufacture of sustainable energy-conducting devices used in the energy sector. This research attempts to fabricate novel electroconductive and mechanically stable nanocomposites via an electroless deposition (ELD) technique using electrically insulating materials. Metallic Cu is coated onto Al2O3 by ELD, and the prepared filler is then integrated (2–14 wt %) into a matrix of polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene-graft-maleic anhydride (PS-b-(PE-r-B)-b-PS-g-MA). Considerable variations in composite phases with filler inclusion exist. The Cu crystallite growth onto Al2O3 was evaluated by X-ray diffraction (XRD) analysis and energy dispersive spectrometry (EDS). Scanning electron microscopy (SEM) depicts a uniform Cu coating on Al2O3, while homogeneous filler dispersion is exhibited in the case of composites. The electrical behavior of composites is enhanced drastically (7.7 × 10−5 S/cm) upon incorporation of Cu–Al2O3 into an insulating polymer matrix (4.4 × 10−16 S/cm). Moreover, mechanical (Young’s modulus, tensile strength and % elongation at break) and thermal (thermogravimetric analysis (TGA), derivative thermogravimetry (DTG), and differential scanning calorimetry (DSC)) properties of the nanocomposites also improve substantially. These composites are likely to meet the demands of modern high-strength electroconductive devices. PMID:28774110

FInvestigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha

2017-08-01

In this paper, we examined normally-OFF N-polar InN-channel Metal insulated semiconductor high-electron mobility transistors (MISHEMTs) device with a relaxed In0.9Al0.1N buffer layer. In addition, the enhancement-mode operation of the N-polar structure was investigated. The effect of scaling in N-polar MISHEMT, such as the dielectric and the channel thickness, alter the electrical behavior of the device. We have achieved a maximum drain current of 1.17 A/mm, threshold voltage (VT) =0.728 V, transconductance (gm) of 2.9 S mm-1, high ION/IOFF current ratio of 3.23×103, lowest ON-state resistance (RON) of 0.41 Ω mm and an intrinsic delay time (τ) of 1.456 Fs along with high-frequency performance with ft/ fmaxof 90 GHz/109 GHz and 180 GHz/260 GHz for TCH =0.5 nm at Vds =0.5 V and 1.0 V. The numerically simulated results of highly confined GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT exhibits outstanding potential as one of the possibility to replace presently used N-polar MISHEMTs for delivering high power density and frequency at RF/power amplifier applications.

Optical signatures of spin-orbit exciton in bandwidth-controlled S r2Ir O4 epitaxial films via high-concentration Ca and Ba doping

NASA Astrophysics Data System (ADS)

Souri, M.; Kim, B. H.; Gruenewald, J. H.; Connell, J. G.; Thompson, J.; Nichols, J.; Terzic, J.; Min, B. I.; Cao, G.; Brill, J. W.; Seo, A.

2017-06-01

We have investigated the electronic and optical properties of (Sr1-xC ax ) 2Ir O4 (x = 0 -0.375 ) and (Sr1-yB ay ) 2Ir O4 (y = 0 -0.375 ) epitaxial thin films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the Jeff=1 /2 spin-orbit Mott insulator S r2Ir O4 . As the average A-site ionic radius increases from (Sr1-xC ax ) 2Ir O4 to (Sr1-yB ay ) 2Ir O4 , optical conductivity spectra in the near-infrared region shift to lower energies, which cannot be explained by the simple picture of well-separated Jeff=1 /2 and Jeff=3 /2 bands. We suggest that the two-peak-like optical conductivity spectra of the layered iridates originates from the overlap between the optically forbidden spin-orbit exciton and the intersite optical transitions within the Jeff=1 /2 band. Our experimental results are consistent with this interpretation as implemented by a multiorbital Hubbard model calculation: namely, incorporating a strong Fano-like coupling between the spin-orbit exciton and intersite d -d transitions within the Jeff=1 /2 band.

Strong Anisotropy of Dirac Cones in SrMnBi2 and CaMnBi2 Revealed by Angle-Resolved Photoemission Spectroscopy

PubMed Central

Feng, Ya; Wang, Zhijun; Chen, Chaoyu; Shi, Youguo; Xie, Zhuojin; Yi, Hemian; Liang, Aiji; He, Shaolong; He, Junfeng; Peng, Yingying; Liu, Xu; Liu, Yan; Zhao, Lin; Liu, Guodong; Dong, Xiaoli; Zhang, Jun; Chen, Chuangtian; Xu, Zuyan; Dai, Xi; Fang, Zhong; Zhou, X. J.

2014-01-01

The Dirac materials, such as graphene and three-dimensional topological insulators, have attracted much attention because they exhibit novel quantum phenomena with their low energy electrons governed by the relativistic Dirac equations. One particular interest is to generate Dirac cone anisotropy so that the electrons can propagate differently from one direction to the other, creating an additional tunability for new properties and applications. While various theoretical approaches have been proposed to make the isotropic Dirac cones of graphene into anisotropic ones, it has not yet been met with success. There are also some theoretical predictions and/or experimental indications of anisotropic Dirac cone in novel topological insulators and AMnBi2 (A = Sr and Ca) but more experimental investigations are needed. Here we report systematic high resolution angle-resolved photoemission measurements that have provided direct evidence on the existence of strongly anisotropic Dirac cones in SrMnBi2 and CaMnBi2. Distinct behaviors of the Dirac cones between SrMnBi2 and CaMnBi2 are also observed. These results have provided important information on the strong anisotropy of the Dirac cones in AMnBi2 system that can be governed by the spin-orbital coupling and the local environment surrounding the Bi square net. PMID:24947490

Recent Topics of Organic Superconductors

NASA Astrophysics Data System (ADS)

Ardavan, Arzhang; Brown, Stuart; Kagoshima, Seiichi; Kanoda, Kazushi; Kuroki, Kazuhiko; Mori, Hatsumi; Ogata, Masao; Uji, Shinya; Wosnitza, Jochen

2012-01-01

Recent developments in research into superconductivity in organic materials are reviewed. In the epoch-defining quasi-one-dimensional TMTSF superconductors with Tc ˜ 1 K, Tc decreases monotonically with increasing pressure, as do signatures of spin fluctuations in the normal state, providing good evidence for magnetically-mediated pairing. Upper critical fields exceed the Zeeman-limiting field by several times, suggesting triplet pairing or a transition to an inhomogeneous superconducting state at high magnetic fields, while triplet pairing is ruled out at low fields by NMR Knight-shift measurements. Evidence for a spatially inhomogeneous superconducting state, Fulde--Ferrel--Larkin--Ovchinnikov state, which has long been sought in various superconducting systems, is now captured by thermodynamic and transport measurements for clean and highly two-dimensional BEDT-TTF and BETS superconductors. Some of the layered superconductors also serve as model systems for Mott physics on anisotropic triangular lattice. For example, the Nernst effect and the pseudo-gap behavior in NMR relaxation are enhanced near to the Mott transition. In the case of increasing spin frustration, the superconducting transition temperature is depressed, and antiferromagnetic ordering is eliminated altogether in the adjacent Mott insulating phase. There is an increasing number of materials exhibiting superconductivity in competition or cooperation with charge order. Theoretical studies shed light on the role of spin and/or charge fluctuations for superconductivity appearing under conditions close to those of correlation-induced insulating phases in the diversity of organic materials.

High-pressure studies on electronic transport properties of Te-substituted Bi2Se3–xTex topological insulators

NASA Astrophysics Data System (ADS)

Devidas, T. R.; Abhirami, S.; Sharma, Shilpam; Amaladas, E. P.; Mani, Awadhesh

2018-03-01

Studies on the electrical transport properties of the 3D topological insulators Bi2Se3 under iso-electronic substitution of Te at Se sites and the application of external pressure have been performed to understand the evolution of its ground-state properties and to explore possible electronic phase transitions in Bi2Se3‑x Te x (x=0\\text{--}3 ) systems. While the external pressure suppresses the metallic behaviour of Bi2Se3 arising from defect charge carriers leading ultimately to non-metal behaviour, the effect of pressure on Te-doped samples x=1\\text{--}2 seems to be more striking, and causes multiple electronic phase transitions such as an insulator-to-metal transition (MIT) followed by pressure-induced superconducting transition at higher pressures. All the critical parameters such as critical pressure for the occurrence of MIT (PMIT}) , superconductivity (PSC}) and maximum pressure induced superconducting transition temperature (Tc,max}) for given compositions are seen to exhibit maxima at x=1.6 which is the composition that exhibits the most insulating behaviour with least concentration of defect charge carriers among the samples of Bi2Se3‑x Te x (x=0\\text{--}3 ) series. The superconducting transition temperature (Tc}) decreases with increasing pressure in x=1\\text{--}2 samples, while it remains nearly constant for Bi2Te3. Based on the analysis of the experimental data it is surmised that the pressure-induced superconductivity seen in these systems is of conventional (BCS) type.

Investigations of the effect of nonmagnetic Ca substitution for magnetic Dy on spin-freezing in Dy₂Ti₂O₇.

PubMed

Anand, V K; Tennant, D A; Lake, B

2015-11-04

Physical properties of partially Ca substituted hole-doped Dy2Ti2O7 have been investigated by ac magnetic susceptibility χ(ac)(T), dc magnetic susceptibility χ(T), isothermal magnetization M(H) and heat capacity C(p)(T) measurements on Dy1.8Ca0.2Ti2O7. The spin-ice system Dy2Ti2O7 exhibits a spin-glass type freezing behavior near 16 K. Our frequency dependent χ(ac)(T) data of Dy1.8Ca0.2Ti2O7 show that the spin-freezing behavior is significantly influenced by Ca substitution. The effect of partial nonmagnetic Ca(2+) substitution for magnetic Dy(3+) is similar to the previous study on nonmagnetic isovalent Y(3+) substituted Dy(2-x)Y(x) Ti2O7 (for low levels of dilution), however the suppression of spin-freezing behavior is substantially stronger for Ca than Y. The Cole-Cole plot analysis reveals semicircular character and a single relaxation mode in Dy1.8Ca0.2Ti2O7 as for Dy2Ti2O7. No noticeable change in the insulating behavior of Dy2Ti2O7 results from the holes produced by 10% Ca(2+) substitution for Dy(3+) ions.

Origin of Transitions between Metallic and Insulating States in Simple Metals

DOE PAGES

Naumov, Ivan I.; Hemley, Russell J.

2015-04-17

Unifying principles that underlie recently discovered transitions between metallic and insulating states in elemental solids under pressure are developed. Using group theory arguments and first principles calculations, we show that the electronic properties of the phases involved in these transitions are controlled by symmetry principles not previously recognized. The valence bands in these systems are described by simple and composite band representations constructed from localized Wannier functions centered on points unoccupied by atoms, and which are not necessarily all symmetrical. The character of the Wannier functions is closely related to the degree of s-p(-d) hybridization and reflects multi-center chemical bondingmore » in these insulating states. The conditions under which an insulating state is allowed for structures having an integer number of atoms per primitive unit cell as well as re-entrant (i.e., metal-insulator-metal) transition sequences are detailed, resulting in predictions of novel behavior such as phases having three-dimensional Dirac-like points. The general principles developed are tested and applied to the alkali and alkaline earth metals, including elements where high-pressure insulating phases have been identified or reported (e.g., Li, Na, and Ca).« less

Optimization by means of an analytical heat transfer model of a thermal insulation for CSP applications based on radiative shields

NASA Astrophysics Data System (ADS)

Gaetano, A.; Roncolato, J.; Montorfano, D.; Barbato, M. C.; Ambrosetti, G.; Pedretti, A.

2016-05-01

The employment of new gaseous heat transfer fluids as air or CO2, which are cheaper and environmentally friendly, is drawing more and more attention within the field of Concentrated Solar Power applications. However, despite the advantages, their use requires receivers with a larger heat transfer area and flow cross section with a consequent greater volume of thermal insulation. Solid thermal insulations currently used present high thermal inertia which is energetically penalizing during the daily transient phases faced by the main plant components (e.g. receivers). With the aim of overcoming this drawback a thermal insulation based on radiative shields is presented in this study. Starting from an initial layout comprising a solid thermal insulation layer, the geometry was optimized avoiding the use of the solid insulation keeping performance and fulfilling the geometrical constraints. An analytical Matlab model was implemented to assess the system thermal behavior in terms of heat loss taking into account conductive, convective and radiative contributions. Accurate 2D Computational Fluid Dynamics (CFD) simulations were run to validate the Matlab model which was then used to select the most promising among three new different designs.

Metallic behavior induced by potassium doping of the trigonal antiferromagnetic insulator EuMn 2 As 2

DOE PAGES

Anand, V. K.; Johnston, D. C.

2016-07-22

Here, we report magnetic susceptibility χ, isothermal magnetization M, heat capacity C p, and electrical resistivity ρ measurements on undoped EuMn 2As 2 and K-doped Eu 0.96K 0.04Mn 2As 2 and Eu 0.93K 0.07Mn 2As 2 single crystals with the trigonal CaAl 2Si 2-type structure as a function of temperature T and magnetic field H. EuMn 2As 2 has an insulating ground state with an activation energy of 52 meV and exhibits antiferromagnetic (AFM) ordering of the Eu +2 spins S=7/2 at T N1=15 K from C p(T) and χ(T) data with a likely spin-reorientation transition at T N2=5.0 K.more » The Mn +2 3d 5 spins-5/2 exhibit AFM ordering at T N=142 K from all three types of measurements. The M(H) isotherm and χ(T) data indicate that the Eu AFM structure is both noncollinear and noncoplanar. The AFM structure of the Mn spins is also unclear. A 4% substitution of K for Eu in Eu 0.96K 0.04Mn 2As 2 is sufficient to induce a metallic ground state. We found evidence for a difference in the AFM structure of the Eu moments in the metallic crystals from that of undoped EuMn 2As 2 versus both T and H. For metallic Eu 0.96K 0.04Mn 2As 2 and Eu 0.93K 0.07Mn 2As 2, an anomalous S-shape T dependence of ρ related to the Mn magnetism is found. Upon cooling from 200 K, ρ exhibits a strong negative curvature, reaches maximum positive slope at the Mn T N≈150 K, and then continues to decrease but more slowly below T N. Finally, this suggests that dynamic short-range AFM order of the Mn spins above the Mn T N strongly suppresses the resistivity, contrary to the conventional decrease of ρ that is only observed upon cooling below T N of an antiferromagnet.« less

Competition of density waves and quantum multicritical behavior in Dirac materials from functional renormalization

NASA Astrophysics Data System (ADS)

Classen, Laura; Herbut, Igor F.; Janssen, Lukas; Scherer, Michael M.

2016-03-01

We study the competition of spin- and charge-density waves and their quantum multicritical behavior for the semimetal-insulator transitions of low-dimensional Dirac fermions. Employing the effective Gross-Neveu-Yukawa theory with two order parameters as a model for graphene and a growing number of other two-dimensional Dirac materials allows us to describe the physics near the multicritical point at which the semimetallic and the spin- and charge-density-wave phases meet. With the help of a functional renormalization group approach, we are able to reveal a complex structure of fixed points, the stability properties of which decisively depend on the number of Dirac fermions Nf. We give estimates for the critical exponents and observe crucial quantitative corrections as compared to the previous first-order ɛ expansion. For small Nf, the universal behavior near the multicritical point is determined by the chiral Heisenberg universality class supplemented by a decoupled, purely bosonic, Ising sector. At large Nf, a novel fixed point with nontrivial couplings between all sectors becomes stable. At intermediate Nf, including the graphene case (Nf=2 ), no stable and physically admissible fixed point exists. Graphene's phase diagram in the vicinity of the intersection between the semimetal, antiferromagnetic, and staggered density phases should consequently be governed by a triple point exhibiting first-order transitions.

The Role of Structural and Compositional Heterogeneities in the Insulator-to-Metal Transition in Hole-Doped APd3O4 (A = Ca, Sr).

PubMed

Lamontagne, Leo K; Laurita, Geneva; Knight, Michael; Yusuf, Huma; Hu, Jerry; Seshadri, Ram; Page, Katharine

2017-05-01

The cubic semiconducting compounds APd 3 O 4 (A = Ca, Sr) can be hole-doped by Na substitution on the A site and driven toward more conducting states. This process has been followed here by a number of experimental techniques to understand the evolution of electronic properties. While an insulator-to-metal transition is observed in Ca 1-x Na x Pd 3 O 4 for x ≥ 0.15, bulk metallic behavior is not observed for Sr 1-x Na x Pd 3 O 4 up to x = 0.20. Given the very similar crystal and (calculated) electronic structures of the two materials, the distinct behavior is a matter of interest. We present evidence of local disorder in the A = Sr materials through the analysis of the neutron pair distribution function, which is potentially at the heart of the distinct behavior. Solid-state 23 Na nuclear magnetic resonance studies additionally suggest a percolative insulator-to-metal transition mechanism, wherein presumably small regions with a signal resembling metallic NaPd 3 O 4 form almost immediately upon Na substitution, and this signal grows monotonically with substitution. Some signatures of increased local disorder and a propensity for Na clustering are seen in the A = Sr compounds.

Spin-Orbital Excitation Continuum and Anomalous Electron-Phonon Interaction in the Mott Insulator LaTiO3

NASA Astrophysics Data System (ADS)

Ulrich, C.; Khaliullin, G.; Guennou, M.; Roth, H.; Lorenz, T.; Keimer, B.

2015-10-01

Raman scattering experiments on stoichiometric, Mott-insulating LaTiO3 over a wide range of excitation energies reveal a broad electronic continuum which is featureless in the paramagnetic state, but develops a gap of ˜800 cm-1 upon cooling below the Néel temperature TN=146 K . In the antiferromagnetic state, the spectral weight below the gap is transferred to well-defined spectral features due to spin and orbital excitations. Low-energy phonons exhibit pronounced Fano anomalies indicative of strong interaction with the electron system for T >TN , but become sharp and symmetric for T

A New Numerical Method for Z2 Topological Insulators with Strong Disorder

NASA Astrophysics Data System (ADS)

Akagi, Yutaka; Katsura, Hosho; Koma, Tohru

2017-12-01

We propose a new method to numerically compute the Z2 indices for disordered topological insulators in Kitaev's periodic table. All of the Z2 indices are derived from the index formulae which are expressed in terms of a pair of projections introduced by Avron, Seiler, and Simon. For a given pair of projections, the corresponding index is determined by the spectrum of the difference between the two projections. This difference exhibits remarkable and useful properties, as it is compact and has a supersymmetric structure in the spectrum. These properties enable highly efficient numerical calculation of the indices of disordered topological insulators. The method, which we propose, is demonstrated for the Bernevig-Hughes-Zhang and Wilson-Dirac models whose topological phases are characterized by a Z2 index in two and three dimensions, respectively.

Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices.

PubMed

Klett, Robin; Schönle, Joachim; Becker, Andreas; Dyck, Denis; Borisov, Kiril; Rott, Karsten; Ramermann, Daniela; Büker, Björn; Haskenhoff, Jan; Krieft, Jan; Hübner, Torsten; Reimer, Oliver; Shekhar, Chandra; Schmalhorst, Jan-Michael; Hütten, Andreas; Felser, Claudia; Wernsdorfer, Wolfgang; Reiss, Günter

2018-02-14

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and, thus, to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak anti-localization, and the weak links of the superconducting quantum interference devices (SQUID) exhibit fully gapped proximity-induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2π periodicity, possibly dominated by the bulk conductivity.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Metallic phases from disordered (2+1)-dimensional quantum electrodynamics

DOE PAGES

Goswami, Pallab; Goldman, Hart; Raghu, S.

2017-06-15

Metallic phases have been observed in several disordered two-dimensional (2D) systems, including thin films near superconductor-insulator transitions and quantum Hall systems near plateau transitions. The existence of 2D metallic phases at zero temperature generally requires an interplay of disorder and interaction effects. Consequently, experimental observations of 2D metallic behavior have largely defied explanation. We formulate a general stability criterion for strongly interacting, massless Dirac fermions against disorder, which describe metallic ground states with vanishing density of states. We show that (2+1)-dimensional quantum electrodynamics (QED 3) with a large, even number of fermion flavors remains metallic in the presence of weakmore » scalar potential disorder due to the dynamic screening of disorder by gauge fluctuations. In conclusion, we also show that QED 3 with weak mass disorder exhibits a stable, dirty metallic phase in which both interactions and disorder play important roles.« less

Dissipation processes in the insulating skyrmion compound Cu2OSeO3

NASA Astrophysics Data System (ADS)

Levatić, I.; Šurija, V.; Berger, H.; Živković, I.

2014-12-01

We present a detailed study of the phase diagram surrounding the skyrmion lattice (SkL) phase of Cu2OSe2O3 using high-precision magnetic ac susceptibility measurements. An extensive investigation of transition dynamics around the SkL phase using the imaginary component of the susceptibility revealed that at the conical-to-SkL transition a broad dissipation region exists with a complex frequency dependence. The analysis of the observed behavior within the SkL phase indicates a distribution of relaxation times intrinsically related to SkL. At the SkL-to-paramagnet transition a narrow first-order peak is found that exhibits a strong frequency and magnetic field dependence. Surprisingly, very similar dependence has been discovered for the first-order transition below the SkL phase, i.e., where the system enters the helical and conical state(s), indicating similar processes across the order-disorder transition.

Novel 3D metallic boron nitride containing only sp2 bonds

NASA Astrophysics Data System (ADS)

Wang, Hao; Zhang, Wei; Huai, Ping

2017-09-01

As the closest isoelectronic analogue of carbon, boron nitride (BN) shares a similar structure with carbon from 1D nanotubes, 2D nanosheets, and 3D diamond structures. However, most BN structures are insulators, which limits their application. In this work, under the inspiration of the sp2 hybridized carbon honeycomb, we propose a hexagonal phase of BN consisting of only sp2 bonds, which exhibits intriguingly intrinsic metallicity. First-principles calculations confirm that this phase is both thermally and dynamically stable. Moreover, the calculations on the band structure, partial density states and electron localization function suggest that the metallic behavior is attributable to the delocalized B-2p electrons, leading to second-neighbor interaction between the p z states of sp2-bonded B atoms in adjacent layers. Our findings not only enrich the BN allotrope family with 3D structures but also stimulate further experimental interest in applications of metallic BN in electronic devices.

Metallic phases from disordered (2+1)-dimensional quantum electrodynamics

NASA Astrophysics Data System (ADS)

Goswami, Pallab; Goldman, Hart; Raghu, S.

2017-06-01

Metallic phases have been observed in several disordered two-dimensional (2D) systems, including thin films near superconductor-insulator transitions and quantum Hall systems near plateau transitions. The existence of 2D metallic phases at zero temperature generally requires an interplay of disorder and interaction effects. Consequently, experimental observations of 2D metallic behavior have largely defied explanation. We formulate a general stability criterion for strongly interacting, massless Dirac fermions against disorder, which describe metallic ground states with vanishing density of states. We show that (2+1)-dimensional quantum electrodynamics (QED3) with a large, even number of fermion flavors remains metallic in the presence of weak scalar potential disorder due to the dynamic screening of disorder by gauge fluctuations. We also show that QED3 with weak mass disorder exhibits a stable, dirty metallic phase in which both interactions and disorder play important roles.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goswami, Pallab; Goldman, Hart; Raghu, S.

Metallic phases have been observed in several disordered two-dimensional (2D) systems, including thin films near superconductor-insulator transitions and quantum Hall systems near plateau transitions. The existence of 2D metallic phases at zero temperature generally requires an interplay of disorder and interaction effects. Consequently, experimental observations of 2D metallic behavior have largely defied explanation. We formulate a general stability criterion for strongly interacting, massless Dirac fermions against disorder, which describe metallic ground states with vanishing density of states. We show that (2+1)-dimensional quantum electrodynamics (QED 3) with a large, even number of fermion flavors remains metallic in the presence of weakmore » scalar potential disorder due to the dynamic screening of disorder by gauge fluctuations. In conclusion, we also show that QED 3 with weak mass disorder exhibits a stable, dirty metallic phase in which both interactions and disorder play important roles.« less

Investigation of Re-X glass ceramic for acceleration insulating columns

NASA Astrophysics Data System (ADS)

Faltens, A.; Rosenblum, S.

1985-05-01

In an induction linac the accelerating voltage appears along a voltage-graded vacuum insulator column which is a performance limiting and major cost component. Re-X glass ceramic insulators have the long-sought properties of allowing cast-in gradient electrodes, good breakdown characteristics, and compatibility with high vacuum systems. Re-X is a glass ceramic developed by General Electric for use in the manufacture of electrical apparatus, such as vacuum arc interrupters. We have examined vacuum outgassing behavior and voltage breakdown in vacuum and find excellent performance. The housings are in the shape of tubes with type 430 stainless steel terminations. Due to a matched coefficient of thermal expansion between metal and insulator, no vacuum leaks have resulted from any welding operation. The components should be relatively inexpensive to manufacture in large sizes and appear to be a very attractive accelerator column. We are planning to use a standard GE housing in our MBE-4 induction linac.

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

PubMed

Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

2017-09-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mironov, Alexey Yu.; Silevitch, Daniel M.; Proslier, Thomas

Three decades after the prediction of charge-vortex duality in the critical vicinity of the two-dimensional superconductor-insulator transition (SIT), one of the fundamental implications of this duality-the charge Berezinskii-Kosterlitz-Thouless (BKT) transition that should occur on the insulating side of the SIT-has remained unobserved. The dual picture of the process points to the existence of a superinsulating state endowed with zero conductance at finite temperature. Here, we report the observation of the charge BKT transition on the insulating side of the SIT in 10 nm thick NbTiN films, identified by the BKT critical behavior of the temperature and magnetic field dependent resistance,more » and map out the magnetic-field dependence of the critical temperature of the charge BKT transition. Finally, we ascertain the effects of the finite electrostatic screening length and its divergence at the magnetic field-tuned approach to the superconductor-insulator transition.« less

Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction

PubMed Central

Sokolowski-Tinten, K.; Shen, X.; Zheng, Q.; Chase, T.; Coffee, R.; Jerman, M.; Li, R. K.; Ligges, M.; Makasyuk, I.; Mo, M.; Reid, A. H.; Rethfeld, B.; Vecchione, T.; Weathersby, S. P.; Dürr, H. A.; Wang, X. J.

2017-01-01

We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels. PMID:28795080

Ultrafast photo-induced dynamics across the metal-insulator transition of VO2

NASA Astrophysics Data System (ADS)

Wang, Siming; Ramírez, Juan Gabriel; Jeffet, Jonathan; Bar-Ad, Shimshon; Huppert, Dan; Schuller, Ivan K.

2017-04-01

The transient reflectivity of VO2 films across the metal-insulator transition clearly shows that with low-fluence excitation, when insulating domains are dominant, energy transfer from the optically excited electrons to the lattice is not instantaneous, but precedes the superheating-driven expansion of the metallic domains. This implies that the phase transition in the coexistence regime is lattice-, not electronically-driven, at weak laser excitation. The superheated phonons provide the latent heat required for the propagation of the optically-induced phase transition. For VO2 this transition path is significantly different from what has been reported in the strong-excitation regime. We also observe a slow-down of the superheating-driven expansion of the metallic domains around the metal-insulator transition, which is possibly due to the competition among several co-existing phases, or an emergent critical-like behavior.

Highly insulating ferromagnetic cobaltite heterostructures

DOE PAGES

Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen; ...

2017-04-02

Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO 3 and the antiferromagnetic brownmillerite SrCoO 2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstructionmore » at the oxide surface/interfaces and crystalline quality of the constituent layers.« less

Highly insulating ferromagnetic cobaltite heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen

Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO 3 and the antiferromagnetic brownmillerite SrCoO 2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstructionmore » at the oxide surface/interfaces and crystalline quality of the constituent layers.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amalraj, Rex; Sambandan, Sanjiv, E-mail: sanjiv@iap.iisc.ernet.in

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on themore » area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.« less

Materials characterization and fracture mechanics of a space grade dielectric silicone insulation

NASA Technical Reports Server (NTRS)

Abdel-Latif, A. I.; Tweedie, A. T.

1982-01-01

The present investigation is concerned with the DC 93-500 high voltage silicone insulation material employed to pot the gun and the collector end of a traveling wave tube (TWT) used on the Landsat D Satellite. The fracture mechanics behavior of the silicone resin was evaluated by measuring the slow crack velocity as a function of the opening mode of the stress intensity factor at +25 and -10 C, taking into account various uniaxial discrete strain values. It was found that the silicone resins slow crack growth is faster than that for a high voltage insulation polyurethane material at the same stress intensity factor value and room temperature.

Insulating Behavior in Graphene with Irradiation-induced Lattice Defects

NASA Astrophysics Data System (ADS)

Chen, Jian-Hao; Williams, Ellen; Fuhrer, Michael

2010-03-01

We irradiated cleaned graphene on silicon dioxide in ultra-high vacuum with low energy inert gas ions to produce lattice defects [1], and investigated in detail the transition from metallic to insulating temperature dependence of the conductivity as a function of defect density. We measured the low field magnetoresistance and temperature-dependent resistivity in situ and find that weak localization can only account for a small correction of the resistivity increase with decreasing temperature. We will discuss possible origins of the insulating temperature dependent resistivity in defected graphene in light of our recent experiments. [4pt] [1] Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, PRL 102, 236805 (2009)

Field-induced metal-insulator transition in a two-dimensional organic superconductor.

PubMed

Wosnitza, J; Wanka, S; Hagel, J; Löhneysen, H; Qualls, J S; Brooks, J S; Balthes, E; Schlueter, J A; Geiser, U; Mohtasham, J; Winter, R W; Gard, G L

2001-01-15

The quasi-two-dimensional organic superconductor beta"-(BEDT-TTF)2SF5CH2CF2SO3 (Tc approximately 4.4 K) shows very strong Shubnikov-de Haas (SdH) oscillations which are superimposed on a highly anomalous steady background magnetoresistance, Rb. Comparison with de Haas-van Alphen oscillations allows a reliable estimate of Rb which is crucial for the correct extraction of the SdH signal. At low temperatures and high magnetic fields insulating behavior evolves. The magnetoresistance data violate Kohler's rule, i.e., cannot be described within the framework of semiclassical transport theory, but converge onto a universal curve appropriate for dynamical scaling at a metal-insulator transition.

Highly Conductive Multifunctional Graphene Polycarbonate Nanocomposites

NASA Technical Reports Server (NTRS)

Yoonessi, Mitra; Gaier, James R.

2010-01-01

Graphene nanosheet bisphenol A polycarbonate nanocomposites (0.027 2.2 vol %) prepared by both emulsion mixing and solution blending methods, followed by compression molding at 287 C, exhibited dc electrical percolation threshold of approx.0.14 and approx.0.38 vol %, respectively. The conductivities of 2.2 vol % graphene nanocomposites were 0.512 and 0.226 S/cm for emulsion and solution mixing. The 1.1 and 2.2 vol % graphene nanocomposites exhibited frequency-independent behavior. Inherent conductivity, extremely high aspect ratio, and nanostructure directed assembly of the graphene using PC nanospheres are the main factors for excellent electrical properties of the nanocomposites. Dynamic tensile moduli of nanocomposites increased with increasing graphene in the nanocomposite. The glass transition temperatures were decreased with increasing graphene for the emulsion series. High-resolution electron microscopy (HR-TEM) and small-angle neutron scattering (SANS) showed isolated graphene with no connectivity path for insulating nanocomposites and connected nanoparticles for the conductive nanocomposites. A stacked disk model was used to obtain the average particle radius, average number of graphene layers per stack, and stack spacing by simulation of the experimental SANS data. Morphology studies indicated the presence of well-dispersed graphene and small graphene stacking with infusion of polycarbonate within the stacks.

Transport and magnetic properties of Fe doped CaMnO3

NASA Astrophysics Data System (ADS)

Neetika; Das, A.; Dhiman, I.; Nigam, A. K.; Yadav, A. K.; Bhattacharyya, D.; Meena, S. S.

2012-12-01

The structural, transport, and magnetic properties of CaMn1-xFexO3-δ (0.0 ≤ x ≤ 0.3) have been studied by using resistivity, magnetization, and neutron powder diffraction techniques. The compounds are found to be isostructural and crystallize in GdFeO3-type orthorhombic structure (space group Pnma). With Fe doping, no structural change is observed. Mössbauer and paramagnetic susceptibility measurements show that Fe substitutes in 4+ valence state, and XANES measurements indicate the presence of mixed valence state of Mn. The compounds exhibit insulating behavior in the studied temperature range. The temperature dependence of resistivity is found to be described by small polaron model for x = 0 and variable range hopping model for x = 0.1. For higher x values, it follows a parallel combination resistance model. A small reduction in TN from 120 K to 100 K with increase in x is found. The magnetic structure changes from Gz-type collinear antiferromagnetic (AFM) structure for x = 0.0 to canted AFM structure GZFY-type for Fe doped compounds. The AFM component of the moment progressively decreases with x while FM component exhibits a maximum at x = 0.2.

Magnetically induced electrical transport and dielectric properties of 3d transition elemental substitution at the Mn-site in Nd0.67Ba0.33MnO3 manganites

NASA Astrophysics Data System (ADS)

Sudakshina, B.; Arun, B.; Chandrasekhar, K. Devi; Yang, H. D.; Vasundhara, M.

2018-05-01

We have investigated the temperature dependence of electrical transport and dielectric properties along with magnetoresistance and magneto dielectric behavior in Nd0.67Ba0.33Mn0.9TR0.1O3 (TR= Cr, Fe, Co, Ni, Cu) manganites. All the compounds crystallized into an orthorhombic structure with Imma space group. Nd0.67Ba0.33MnO3 shows insulating to metallic behavior at intermediate temperatures, but, with the substitution of transitional elements it shows insulating in nature, down to lowest temperature measured for all the compounds. Dielectric measurement shows the intrinsic behavior of these lossy materials. A large value of magneto resistance is obtained for all the compounds and considerable amount of magneto-dielectric effect is shown for all the substituted compounds at lower temperatures.

Topological insulator behavior of WS{sub 2} monolayer with square-octagon ring structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Ashok, E-mail: ashok@cup.ac.in; Pandey, Ravindra; Ahluwalia, P. K.

We report electronic behavior of an allotrope of monolayer WS{sub 2} with a square octagon ring structure, refereed to as (so-WS{sub 2}) within state-of-the-art density functional theory (DFT) calculations. The WS{sub 2} monolayer shows semi-metallic characteristics with Dirac-cone like features around Γ. Unlike p-orbital’s Dirac-cone in graphene, the Dirac-cone in the so-WS{sub 2} monolayer originates from the d-electrons of the W atom in the lattice. Most interestingly, the spin-orbit interaction associated with d-electrons induce a finite band-gap that results into the metal-semiconductor transition and topological insulator-like behavior in the so-WS{sub 2} monolayer. These characteristics suggest the so-WS{sub 2} monolayer tomore » be a promising candidate for the next-generation electronic and spintronics devices.« less

Topological quantization in units of the fine structure constant.

PubMed

Maciejko, Joseph; Qi, Xiao-Liang; Drew, H Dennis; Zhang, Shou-Cheng

2010-10-15

Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant topological insulator in three dimensions exhibits a topological magnetoelectric effect quantized in units of the fine structure constant α=e²/ℏc. In this Letter, we propose an optical experiment to directly measure this topological quantization phenomenon, independent of material details. Our proposal also provides a way to measure the half-quantized Hall conductances on the two surfaces of the topological insulator independently of each other.

Many-body instabilities and mass generation in slow Dirac materials

NASA Astrophysics Data System (ADS)

Triola, Christopher; Zhu, Jianxin; Migliori, Albert; Balatsky, Alexander

2015-03-01

Some Kondo insulators are expected to possess topologically protected surface states with linear Dirac spectrum, the topological Kondo insulators. Because the bulk states of these systems typically have heavy effective electron masses, the surface states may exhibit extraordinarily small Fermi velocities that could force the effective fine structure constant of the surface states into the strong coupling regime. Using a tight-binding model we study the many-body instabilities of these systems and identify regions of parameter space for which antiferromagnetic, ferromagnetic and charge density wave instabilities occur. Work Supported by USDOE BES E304.

Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

NASA Astrophysics Data System (ADS)

Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

2008-04-01

We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

Zero thermal expansion and semiconducting properties in PbTiO 3 –Bi(Co, Ti)O 3 ferroelectric solid solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Zhao; Chen, Jun; Jiang, Xingxing

Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Up to now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in semiconducting ferroelectric of 0.6PbTiO 3-0.4Bi(Co 0.55Ti 0.45)O 3-δ. Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied bymore » negative temperature coefficient of resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ionic (Ti 3+) to another (Ti 4+). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relative lower band-gap (E g) value of 1.5 eV, while ferroelectric property can be well maintained with large polarization. The first-principles calculations reveal that the drastically narrowed E g is related to the Co-Ti substitution. Finally, the present multifunctional material containing ZTE, semiconducting and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.« less

Zero thermal expansion and semiconducting properties in PbTiO 3 –Bi(Co, Ti)O 3 ferroelectric solid solutions

DOE PAGES

Pan, Zhao; Chen, Jun; Jiang, Xingxing; ...

2017-02-16

Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Up to now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in semiconducting ferroelectric of 0.6PbTiO 3-0.4Bi(Co 0.55Ti 0.45)O 3-δ. Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied bymore » negative temperature coefficient of resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ionic (Ti 3+) to another (Ti 4+). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relative lower band-gap (E g) value of 1.5 eV, while ferroelectric property can be well maintained with large polarization. The first-principles calculations reveal that the drastically narrowed E g is related to the Co-Ti substitution. Finally, the present multifunctional material containing ZTE, semiconducting and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.« less

Zero Thermal Expansion and Semiconducting Properties in PbTiO3-Bi(Co, Ti)O3 Ferroelectric Solid Solutions.

PubMed

Pan, Zhao; Chen, Jun; Jiang, Xingxing; Lin, Zheshuai; Zhang, Linxing; Fan, Longlong; Rong, Yangchun; Hu, Lei; Liu, Hui; Ren, Yang; Kuang, Xiaojun; Xing, Xianran

2017-03-06

Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Until now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in a semiconducting ferroelectric of 0.6PbTiO 3 -0.4Bi(Co 0.55 Ti 0.45 )O 3-δ . Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied by negative temperature coefficient of resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ion (Ti 3+ ) to another (Ti 4+ ). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relatively lower band gap (E g ) value of 1.5 eV, while the ferroelectric property can be well-maintained with large polarization. The first-principles calculations reveal that the drastically narrowed E g is related to the Co-Ti substitution. The present multifunctional material containing ZTE, semiconducting, and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

DOE PAGES

Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

2016-05-04

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at themore » double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

A steep-slope transistor based on abrupt electronic phase transition

NASA Astrophysics Data System (ADS)

Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G.; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-01

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (`sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

A steep-slope transistor based on abrupt electronic phase transition.

PubMed

Shukla, Nikhil; Thathachary, Arun V; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-07

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

High-density Two-Dimensional Small Polaron Gas in a Delta-Doped Mott Insulator

PubMed Central

Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler A.; Zhang, Jack Y.; Stemmer, Susanne; Emin, David; Allen, S. James

2013-01-01

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~7 × 1014 cm−2. PMID:24257578

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.

PubMed

Jeong, Yesul; Pearson, Christopher; Kim, Hyun-Gwan; Park, Man-Young; Kim, Hongdoo; Do, Lee-Mi; Petty, Michael C

2016-01-27

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of ∼10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of ∼10(7).

Prediction on the Enhancement of the Impact Sound Insulation to a Floating Floor with Resilient Interlayer

NASA Astrophysics Data System (ADS)

Huang, Xianfeng; Meng, Yao; Huang, Riming

2017-10-01

This paper describes a theoretical method for predicting the improvement of the impact sound insulation to a floating floor with the resilient interlayer. Statistical energy analysis (SEA) model, which is skilful in calculating the floor impact sound, is set up for calculating the reduction in impact sound pressure level in downstairs room. The sound transmission paths which include direct path and flanking paths are analyzed to find the dominant one; the factors that affect impact sound reduction for a floating floor are explored. Then, the impact sound level in downstairs room is determined and comparisons between predicted and measured data are conducted. It is indicated that for the impact sound transmission across a floating floor, the flanking path impact sound level contribute tiny influence on overall sound level in downstairs room, and a floating floor with low stiffness interlayer exhibits favorable sound insulation on direct path. The SEA approach applies to the floating floors with resilient interlayers, which are experimentally verified, provides a guidance in sound insulation design.

Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.

PubMed

Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong

2014-11-01

The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

Persistent Hall voltages across thin planar charged quantum rings on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Durganandini, P.

2015-03-01

We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.

Laser-irradiated Kondo insulators: Controlling the Kondo effect and topological phases

NASA Astrophysics Data System (ADS)

Takasan, Kazuaki; Nakagawa, Masaya; Kawakami, Norio

2017-09-01

We investigate theoretically the nature of laser-irradiated Kondo insulators. Using Floquet theory and the slave-boson approach, we study a periodic Anderson model and derive an effective model that describes laser-irradiated Kondo insulators. In this model, we find two generic effects induced by laser light. One is dynamical localization, which suppresses hopping and hybridization. The other is laser-induced hopping and hybridization, which can be interpreted as synthetic spin-orbit coupling or a magnetic field. The first effect drastically changes the behavior of the Kondo effect. In particular, the Kondo effect under laser light qualitatively changes its character depending on whether the hybridization is on-site or off-site. The second effect triggers topological phase transitions. In topological Kondo insulators, linearly polarized laser light realizes phase transitions between trivial, weak topological, and strong topological Kondo insulators. Moreover, circularly polarized laser light breaks time-reversal symmetry and induces Weyl semimetallic phases. Our results make it possible to dynamically control the Kondo effect and topological phases in heavy-fermion systems. We also discuss experimental setups to detect the signatures.

Harnessing the metal-insulator transition for tunable metamaterials

NASA Astrophysics Data System (ADS)

Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

2017-08-01

The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

Bark flammability as a fire-response trait for subalpine trees

PubMed Central

Frejaville, Thibaut; Curt, Thomas; Carcaillet, Christopher

2013-01-01

Relationships between the flammability properties of a given plant and its chances of survival after a fire still remain unknown. We hypothesize that the bark flammability of a tree reduces the potential for tree survival following surface fires, and that if tree resistance to fire is provided by a thick insulating bark, the latter must be few flammable. We test, on subalpine tree species, the relationship between the flammability of bark and its insulating ability, identifies the biological traits that determine bark flammability, and assesses their relative susceptibility to surface fires from their bark properties. The experimental set of burning properties was analyzed by Principal Component Analysis to assess the bark flammability. Bark insulating ability was expressed by the critical time to cambium kill computed from bark thickness. Log-linear regressions indicated that bark flammability varies with the bark thickness and the density of wood under bark and that the most flammable barks have poor insulating ability. Susceptibility to surface fires increases from gymnosperm to angiosperm subalpine trees. The co-dominant subalpine species Larix decidua (Mill.) and Pinus cembra (L.) exhibit large differences in both flammability and insulating ability of the bark that should partly explain their contrasted responses to fires in the past. PMID:24324473

Nanoscale control of an interfacial metal-insulator transition at room temperature.

PubMed

Cen, C; Thiel, S; Hammerl, G; Schneider, C W; Andersen, K E; Hellberg, C S; Mannhart, J; Levy, J

2008-04-01

Experimental and theoretical investigations have demonstrated that a quasi-two-dimensional electron gas (q-2DEG) can form at the interface between two insulators: non-polar SrTiO3 and polar LaTiO3 (ref. 2), LaAlO3 (refs 3-5), KTaO3 (ref. 7) or LaVO3 (ref. 6). Electronically, the situation is analogous to the q-2DEGs formed in semiconductor heterostructures by modulation doping. LaAlO3/SrTiO3 heterostructures have recently been shown to exhibit a hysteretic electric-field-induced metal-insulator quantum phase transition for LaAlO3 thicknesses of 3 unit cells. Here, we report the creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3. Using voltages applied by a conducting atomic force microscope (AFM) probe, the buried LaAlO3/SrTiO3 interface is locally and reversibly switched between insulating and conducting states. Persistent field effects are observed using the AFM probe as a gate. Patterning of conducting lines with widths of approximately 3 nm, as well as arrays of conducting islands with densities >10(14) inch(-2), is demonstrated. The patterned structures are stable for >24 h at room temperature.

The influence of partial replacement of hemp shives by expanded perlite on physical properties of hemp-lime composite

NASA Astrophysics Data System (ADS)

Brzyski, Przemysław; Widomski, Marcin

2017-07-01

The use of waste plants in building materials production is consistent with the principles of sustainable development, including waste management, CO2 balance, biodegradability of the material e.g. after building demolition. The porous structure of plant materials determines their usability as the insulation materials. An example of plant applicable in the construction industry is the industrial hemp. The shives are produced from the wooden core of the hemp stem as lightweight insulating filler in the composite based on lime binder. The discussed hemp-lime composite, due to the presence of lightweight, porous organic aggregates exhibits satisfactory thermal insulation properties and is used as filling and insulation of walls (as well as roofs and floors) in buildings of the wooden frame construction. The irregular shape of shives and their low density causes nonhomogenous compaction of composite and the formation of voids between the randomly arranged shives. In this paper the series of hemp-lime composites were tested. Apart from hemp shives, an additional aggregate - expanded perlite was used as a fine, lightweight, thermal insulating filler. Application of the additional aggregate was aimed to fill the voids between hemp shives and to investigate its influence on the physical properties of composite: apparent density, total porosity, water absorption and thermal conductivity.

Metal-insulator transitions

NASA Astrophysics Data System (ADS)

Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

1998-10-01

Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and orbital fluctuations, mass renormalization effects, incoherence of charge dynamics, and phase transitions under control of key parameters such as band filling, bandwidth, and dimensionality. These parameters are experimentally varied by doping, pressure, chemical composition, and magnetic fields. Much of the observed behavior can be described by the current theory. Open questions and future problems are also extracted from comparison between experimental results and theoretical achievements.

Experimental studies on hybrid superconductor-topological insulator nanoribbon Josephson devices

NASA Astrophysics Data System (ADS)

Kayyalha, Morteza; Jauregui, Luis; Kazakov, Aleksander; Miotkowski, Ireneusz; Rokhinson, Leonid; Chen, Yong

The spin-helical topological surface states (TSS) of topological insulators in proximity with an s-wave superconductor are predicted to demonstrate signatures of topological superconductivity and host Majorana fermions. Here, we report on the observation of gate-tunable proximity-induced superconductivity in an intrinsic BiSbTeSe2 topological insulator nanoribbon (TINR) based Josephson junction (JJ) with Nb contacts. We observe a gate-tunable critical current (IC) with an anomalous behavior in the temperature (T) dependence of IC. We discuss various possible scenarios that could be relevant to this anomalous behavior, such as (i) the different temperature dependence of supercurrent generated by in-gap, where phase slip plays an important role, and out-of-gap Andreev bound states or (ii) the different critical temperatures associated with the top and bottom topological surface states. Our modeling of IC vs. T suggests the possible existence of one pair of in-gap Andreev bound states in our TINR. We have also studied the effects of magnetic fields on the critical current in our TINR Josephson junctions.

Epitaxy, strain, and composition effects on metal-insulator transition characteristics of SmNiO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aydogdu, Gulgun H.; Ha, Sieu D.; Viswanath, B.

SmNiO{sub 3} (SNO) thin films were deposited on LaAlO{sub 3} (LAO), SrTiO{sub 3}, SrLaAlO{sub 4}, Si, and Al{sub 2}O{sub 3} (sapphire) substrates by RF magnetron sputtering and studies were conducted to understand how film structure and composition influence the insulator-metal transition properties. It is observed that the compressive strain induces the insulator to metal transition (MIT), while tensile strain suppresses it. In the case of non-epitaxial films, semiconducting behavior is obtained on sapphire over a broad temperature range, while on heavily-doped Si substrate; an MIT is seen in out-of-plane resistance measurement. In addition, thickness dependence on the resistance behavior andmore » nickel oxidation state has been examined for epitaxial SNO films on LAO substrates. Fine control of the MIT by modifications to the mismatch strain and thickness provides insights to enhance the performance and the functionality of these films for emerging electron devices.« less

Insulator-based dielectrophoresis of microorganisms: theoretical and experimental results.

PubMed

Moncada-Hernandez, Hector; Baylon-Cardiel, Javier L; Pérez-González, Victor H; Lapizco-Encinas, Blanca H

2011-09-01

Dielectrophoresis (DEP) is the motion of particles due to polarization effects in nonuniform electric fields. DEP has great potential for handling cells and is a non-destructive phenomenon. It has been utilized for different cell analysis, from viability assessments to concentration enrichment and separation. Insulator-based DEP (iDEP) provides an attractive alternative to conventional electrode-based systems; in iDEP, insulating structures are used to generate nonuniform electric fields, resulting in simpler and more robust devices. Despite the rapid development of iDEP microdevices for applications with cells, the fundamentals behind the dielectrophoretic behavior of cells has not been fully elucidated. Understanding the theory behind iDEP is necessary to continue the progress in this field. This work presents the manipulation and separation of bacterial and yeast cells with iDEP. A computational model in COMSOL Multiphysics was employed to predict the effect of direct current-iDEP on cells suspended in a microchannel containing an array of insulating structures. The model allowed predicting particle behavior, pathlines and the regions where dielectrophoretic immobilization should occur. Experimental work was performed at the same operating conditions employed with the model and results were compared, obtaining good agreement. This is the first report on the mathematical modeling of the dielectrophoretic response of yeast and bacterial cells in a DC-iDEP microdevice. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strain-controlled electronic properties and magnetorelaxor behaviors in electron-doped CaMnO3 thin films

NASA Astrophysics Data System (ADS)

Xiang, P.-H.; Yamada, H.; Sawa, A.; Akoh, H.

2009-02-01

We have fabricated epitaxial thin films of electron-doped manganite Ca1-xCexMnO3 (CCMO) with 0≤x≤0.08. The transport properties of CCMO films are very sensitive to substrate-controlled epitaxial strain. For the CCMO(x =0.05) film, the metallic transport characteristic is observed only on a nearly lattice-matched NdAlO3 (NAO) substrate, while tensilely and compressively stressed films are insulating. The CCMO(x =0.06) film on the NAO substrate shows a large magnetoresistance characteristic of a magnetorelaxor. This behavior can be explained in terms of the phase separation and the irreversible growth of the metallic domain in antiferromagnetic insulating matrix.

Ultrafast Dynamics in Vanadium Dioxide: Separating Spatially Segregated Mixed Phase Dynamics in the Time-domain

NASA Astrophysics Data System (ADS)

Hilton, David

2011-10-01

In correlated electronic systems, observed electronic and structural behavior results from the complex interplay between multiple, sometimes competing degrees-of- freedom. One such material used to study insulator-to-metal transitions is vanadium dioxide, which undergoes a phase transition from a monoclinic-insulating phase to a rutile-metallic phase when the sample is heated to 340 K. The major open question with this material is the relative influence of this structural phase transition (Peirels transition) and the effects of electronic correlations (Mott transition) on the observed insulator-to-metal transition. Answers to these major questions are complicated by vanadium dioxide's sensitivity to perturbations in the chemical structure in VO2. For example, related VxOy oxides with nearly a 2:1 ratio do not demonstrate the insulator-to- metal transition, while recent work has demonstrated that W:VO2 has demonstrated a tunable transition temperature controllable with tungsten doping. All of these preexisting results suggest that the observed electronic properties are exquisitely sensitive to the sample disorder. Using ultrafast spectroscopic techniques, it is now possible to impulsively excite this transition and investigate the photoinduced counterpart to this thermal phase transition in a strongly nonequilibrium regime. I will discuss our recent results studying the terahertz-frequency conductivity dynamics of this photoinduced phase transition in the poorly understood near threshold temperature range. We find a dramatic softening of the transition near the critical temperature, which results primarily from the mixed phase coexistence near the transition temperature. To directly study this mixed phase behavior, we directly study the nucleation and growth rates of the metallic phase in the parent insulator using non-degenerate optical pump-probe spectroscopy. These experiments measure, in the time- domain, the coexistent phase separation in VO2 (spatially separated insulator and metal islands) and, more importantly, their dynamic evolution in response to optical excitation.

Anisotropic, lightweight, strong, and super thermally insulating nanowood with naturally aligned nanocellulose

PubMed Central

Li, Tian; Song, Jianwei; Zhao, Xinpeng; Yang, Zhi; Pastel, Glenn; Xu, Shaomao; Jia, Chao; Dai, Jiaqi; Chen, Chaoji; Gong, Amy; Jiang, Feng; Yao, Yonggang; Fan, Tianzhu; Yang, Bao; Wågberg, Lars; Yang, Ronggui; Hu, Liangbing

2018-01-01

There has been a growing interest in thermal management materials due to the prevailing energy challenges and unfulfilled needs for thermal insulation applications. We demonstrate the exceptional thermal management capabilities of a large-scale, hierarchal alignment of cellulose nanofibrils directly fabricated from wood, hereafter referred to as nanowood. Nanowood exhibits anisotropic thermal properties with an extremely low thermal conductivity of 0.03 W/m·K in the transverse direction (perpendicular to the nanofibrils) and approximately two times higher thermal conductivity of 0.06 W/m·K in the axial direction due to the hierarchically aligned nanofibrils within the highly porous backbone. The anisotropy of the thermal conductivity enables efficient thermal dissipation along the axial direction, thereby preventing local overheating on the illuminated side while yielding improved thermal insulation along the backside that cannot be obtained with isotropic thermal insulators. The nanowood also shows a low emissivity of <5% over the solar spectrum with the ability to effectively reflect solar thermal energy. Moreover, the nanowood is lightweight yet strong, owing to the effective bonding between the aligned cellulose nanofibrils with a high compressive strength of 13 MPa in the axial direction and 20 MPa in the transverse direction at 75% strain, which exceeds other thermal insulation materials, such as silica and polymer aerogels, Styrofoam, and wool. The excellent thermal management, abundance, biodegradability, high mechanical strength, low mass density, and manufacturing scalability of the nanowood make this material highly attractive for practical thermal insulation applications. PMID:29536048

Processing of Al2O3/SrTiO3/PDMS Composites With Low Dielectric Loss

NASA Astrophysics Data System (ADS)

Yao, J. L.; Guo, M. J.; Qi, Y. B.; Zhu, H. X.; Yi, R. Y.; Gao, L.

2018-05-01

Polydimethylsiloxane (PDMS) is widely used in the electrical and electronic industries due to its excellent electrical insulation and biocompatible characteristics. However, the dielectric constant of pure PDMS is very low which restricts its applications. Herein, we report a series of PDMS/Al2O3/strontium titanate (ST) composites with high dielectric constant and low loss prepared by a simple experimental method. The composites exhibit high dielectric constant (relative dielectric constant is 4) after the composites are coated with insulated Al2O3 particles, and the dielectric constant gets further improved for composites with ST particles (dielectric constant reaches 15.5); a lower dielectric loss (tanδ= 0.05) is also found at the same time which makes co-filler composites suitable for electrical insulation products, and makes the experimental method more interesting in modern teaching.

Superconductor-insulator transition in a stripe-ordered cuprate

NASA Astrophysics Data System (ADS)

Tranquada, John; Homes, C.; Gu, G. D.; Li, Q.; Huecker, M.

We reconsider the case of La2-xBaxCuO4 with x = 1 / 8 , where spin-stripe order and 2D superconducting correlations develop simultaneously at 40 K. The thermal evolution of the in-plane optical reflectivity suggests the development of a Josephson plasma resonance (JPR) between charge stripes, by analogy with the JPR seen in c-axis reflectivity in the superconducting state of Josephson-coupled CuO2 planes. At low-temperature, when the superconductivity is suppressed by a magnetic field, the resistivity exhibits insulating character. We interpret this as suppression of the Josephson coupling between pair correlations in neighboring charge stripes, with single-particle transport suppressed by the surviving spin-stripe order. To obtain direct evidence that the high-field insulator involves hole pairs localized to 1D stripes will require further experiments. Work at BNL supported by Office of Basic Energy Sciences, US DOE, under Contract No. DE-SC0012704.

Structural evolution across the insulator-metal transition in oxygen-deficient BaTiO 3-δ studied using neutron total scattering and Rietveld analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, I.-K.; Lee, Seunghun; Jeong, Se-Young

2011-08-29

Oxygen-deficient BaTiO 3-δ exhibits an insulator-metal transition with increasing δ. We performed neutron total scattering measurements to study structural evolution across an insulator-metal transition in BaTiO 3-δ. Despite its significant impact on resistivity, slight oxygen reduction (δ=0.09) caused only a small disturbance on the local doublet splitting of Ti-O bond. This finding implies that local polarization is well preserved under marginal electric conduction. In the highly oxygen-deficient metallic state (δ=0.25), however, doublet splitting of the Ti-O bond became smeared. The smearing of the local Ti-O doublet is complemented with long-range structural analysis and demonstrates that the metallic conduction in themore » highly oxygen-reduced BaTiO 3-δ is due to the appearance of nonferroelectric cubic lattice.« less

Properties of lightweight cement-based composites containing waste polypropylene

NASA Astrophysics Data System (ADS)

Záleská, Martina; Pavlíková, Milena; Pavlík, Zbyšek

2016-07-01

Improvement of buildings thermal stability represents an increasingly important trend of the construction industry. This work aims to study the possible use of two types of waste polypropylene (PP) for the development of lightweight cement-based composites with enhanced thermal insulation function. Crushed PP waste originating from the PP tubes production is used for the partial replacement of silica sand by 10, 20, 30, 40 and 50 mass%, whereas a reference mixture without plastic waste is studied as well. First, basic physical and thermal properties of granular PP random copolymer (PPR) and glass fiber reinforced PP (PPGF) aggregate are studied. For the developed composite mixtures, basic physical, mechanical, heat transport and storage properties are accessed. The obtained results show that the composites with incorporated PP aggregate exhibit an improved thermal insulation properties and acceptable mechanical resistivity. This new composite materials with enhanced thermal insulation function are found to be promising materials for buildings subsoil or floor structures.

Specific heat and magnetic susceptibility of CeNiSn doped with Rh.

PubMed

Slebarski, A; Maple, M B; Fijałkowski, M; Goraus, J

2010-04-28

CeNiSn is known as a semimetallic system with a small pseudogap at the Fermi energy. We investigate the effect of Rh doping on the Kondo insulator CeNiSn by means of measurements of ac magnetic susceptibility and specific heat. We show that the formation of the Kondo insulator narrow gap in CeNi(1 - x)Rh(x)Sn is associated with disorder-induced f-electron localization. For doped CeNiSn with x ≤ 0.06, the electrical resistivity data follow an activation and variable range hopping behaviour at low T, consistent with weak disorder and localization, while C/T is large, which is not a common feature of Kondo insulators. For x > 0.06, the system is metallic and exhibits non-Fermi liquid behaviour with magnetic susceptibility χ ∼ T( - n) with n ∼ 0.4 and electrical resistivity ρ ∼ T.

High-pressure electrical resistivity studies for Ba1-xCsxFe2Se3

NASA Astrophysics Data System (ADS)

Kawashima, C.; Soeda, H.; Takahashi, H.; Hawai, T.; Nambu, Y.; Sato, T. J.; Hirata, Y.; Ohgushi, K.

2017-10-01

High-pressure electrical resistance measurements were performed for iron-based ladder material Ba1-xCsxFe2Se3 (x = 0.25 and 0.65) using a diamond anvil cell (DAC). Recent high-pressure study revealed that iron-based ladder material BaFe2S3 exhibits an insulator-metal transition and superconductivity, and this discovery would provide important insight for understanding the mechanism of iron-based superconductors. Therefore, it is intriguing to investigate the high-pressure properties for the iron-based ladder material Ba1-xCsxFe2Se3 system. The parent compounds BaFe2Se3 and CsFe2Se3 show insulating and magnetic ordering features. For Ba1-xCsxFe2Se3 system, no magnetic ordering is observed for x = 0.25 and minimum charge gap was estimated for x = 0.65. The insulator-metal transitions are observed in both materials.

High-pressure electrical resistivity studies for Ba1-xCsxFe2Se3

NASA Astrophysics Data System (ADS)

Kawashima, C.; Soeda, H.; Takahashi, H.; Hawai, T.; Nambu, Y.; Sato, T. J.; Hirata, Y.; Ohgushi, K.

2017-10-01

High-pressure electrical resistance measurements were performed for iron-based ladder material Ba1-xCsxFe2Se3 (x = 0.25 and 0.65) using a diamond anvil cell (DAC). Recent high-pressure study revealed that iron-based ladder material BaFe2S3 exhibits an insulator- metal transition and superconductivity, and this discovery would provide important insight for understanding the mechanism of iron-based superconductors. Therefore, it is intriguing to investigate the high-pressure properties for the iron-based ladder material Ba1-xCsxFe2Se3 system. The parent compounds BaFe2Se3 and CsFe2Se3 show insulating and magnetic ordering features. For Ba1-xCsxFe2Se3 system, no magnetic ordering is observed for x = 0.25 and minimum charge gap was estimated for x = 0.65. The insulator-metal transitions are observed in both materials.

Realizing Haldane model in Fe-based honeycomb ferromagnetic insulators

NASA Astrophysics Data System (ADS)

Kim, Heung-Sik; Kee, Hae-Young

2017-12-01

The topological Haldane model on a honeycomb lattice is a prototype of systems hosting topological phases of matter without external fields. It is the simplest model exhibiting the quantum Hall effect without Landau levels, which motivated theoretical and experimental explorations of topological insulators and superconductors. Despite its simplicity, its realization in condensed matter systems has been elusive due to a seemingly difficult condition of spinless fermions with sublattice-dependent magnetic flux terms. While there have been theoretical proposals including elaborate atomic-scale engineering, identifying candidate topological Haldane model materials has not been successful, and the first experimental realization was recently made in ultracold atoms. Here, we suggest that a series of Fe-based honeycomb ferromagnetic insulators, AFe2(PO4)2 (A=Ba, Cs, K, La) possess Chern bands described by the topological Haldane model. How to detect the quantum anomalous Hall effect is also discussed.

Topological Oxide Insulator in Cubic Perovskite Structure

PubMed Central

Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

2013-01-01

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

Modeling the Gas Dynamics Environment in a Subscale Solid Rocket Test Motor

NASA Technical Reports Server (NTRS)

Eaton, Andrew M.; Ewing, Mark E.; Bailey, Kirk M.; McCool, Alex (Technical Monitor)

2001-01-01

Subscale test motors are often used for the evaluation of solid rocket motor component materials such as internal insulation. These motors are useful for characterizing insulation performance behavior, screening insulation material candidates and obtaining material thermal and ablative property design data. One of the primary challenges associated with using subscale motors however, is the uncertainty involved when extrapolating the results to full-scale motor conditions. These uncertainties are related to differences in such phenomena as turbulent flow behavior and boundary layer development, propellant particle interactions with the wall, insulation off-gas mixing and thermochemical reactions with the bulk flow, radiation levels, material response to the local environment, and other anomalous flow conditions. In addition to the need for better understanding of physical mechanisms, there is also a need to better understand how to best simulate these phenomena using numerical modeling approaches such as computational fluid dynamics (CFD). To better understand and model interactions between major phenomena in a subscale test motor, a numerical study of the internal flow environment of a representative motor was performed. Simulation of the environment included not only gas dynamics, but two-phase flow modeling of entrained alumina particles like those found in an aluminized propellant, and offgassing from wall surfaces similar to an ablating insulation material. This work represents a starting point for establishing the internal environment of a subscale test motor using comprehensive modeling techniques, and lays the groundwork for improving the understanding of the applicability of subscale test data to full-scale motors. It was found that grid resolution, and inclusion of phenomena in addition to gas dynamics, such as two-phase and multi-component gas composition are all important factors that can effect the overall flow field predictions.

Spin-orbit driven magnetic insulating state with J eff=1/2 character in a 4d oxide

DOE PAGES

Calder, S.; Li, Ling; Okamoto, Satoshi; ...

2015-11-30

The unusual magnetic and electronic ground states of 5d iridates has been shown to be driven by intrinsically enhanced spin-orbit coupling (SOC). The influence of appreciable but reduced SOC in creating the manifested magnetic insulating states in 4d oxides is less clear, with one hurdle being the existence of such compounds. Here we present experimental and theoretical results on Sr 4RhO 6 that reveal SOC dominated behavior. Neutron measurements show the octahedra are both spatially separated and locally ideal, making the electronic ground state susceptible to alterations by SOC. Magnetic ordering is observed with a similar structure to an analogousmore » J eff=1/2 Mott iridate. We consider the underlying role of SOC in this rhodate with density functional theory and x-ray absorption spectroscopy and find a magnetic insulating ground state with J eff =1/2 character.The unusual magnetic and electronic ground states of 5d iridates have been shown to be driven by intrinsically enhanced spin-orbit coupling (SOC). The influence of appreciable but reduced SOC in creating the manifested magnetic insulating states in 4d oxides is less clear, with one hurdle being the existence of such compounds. Here, we present experimental and theoretical results on Sr 4RhO 6 that reveal SOC dominated behavior. Neutron measurements show the octahedra are both spatially separated and locally ideal, making the electronic ground state susceptible to alterations by SOC. Magnetic ordering is observed with a similar structure to an analogous J eff=1/2 Mott iridate. We consider the underlying role of SOC in this rhodate with density functional theory and x-ray absorption spectroscopy, and find a magnetic insulating ground state with J eff=12 character.« less

Strongly enhanced thermal transport in a lightly doped Mott insulator at low temperature.

PubMed

Zlatić, V; Freericks, J K

2012-12-28

We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate fermions and a nonuniversal "crossover" region where the Lorenz number grows to large values, while still maintaining a large thermoelectric figure of merit. The electron dynamics are described by the Falicov-Kimball model which is solved for arbitrary large on-site correlation with a dynamical mean-field theory algorithm on a Bethe lattice. We show how these results are generic for lightly doped Mott insulators as long as the renormalized Fermi liquid scale is pushed to very low temperature and the system is not magnetically ordered.

Photoinduced Demagnetization and Insulator-to-Metal Transition in Ferromagnetic Insulating BaFeO_{3} Thin Films.

PubMed

Tsuyama, T; Chakraverty, S; Macke, S; Pontius, N; Schüßler-Langeheine, C; Hwang, H Y; Tokura, Y; Wadati, H

2016-06-24

We studied the electronic and magnetic dynamics of ferromagnetic insulating BaFeO_{3} thin films by using pump-probe time-resolved resonant x-ray reflectivity at the Fe 2p edge. By changing the excitation density, we found two distinctly different types of demagnetization with a clear threshold behavior. We assigned the demagnetization change from slow (∼150  ps) to fast (<70  ps) to a transition into a metallic state induced by laser excitation. These results provide a novel approach for locally tuning magnetic dynamics. In analogy to heat-assisted magnetic recording, metallization can locally tune the susceptibility for magnetic manipulation, allowing one to spatially encode magnetic information.

Resistance change effect in SrTiO3/Si (001) isotype heterojunction

NASA Astrophysics Data System (ADS)

Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

2018-02-01

Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

Anomalous High-Energy Waterfall-Like Electronic Structure in 5 d Transition Metal Oxide Sr2IrO4 with a Strong Spin-Orbit Coupling

PubMed Central

Liu, Yan; Yu, Li; Jia, Xiaowen; Zhao, Jianzhou; Weng, Hongming; Peng, Yingying; Chen, Chaoyu; Xie, Zhuojin; Mou, Daixiang; He, Junfeng; Liu, Xu; Feng, Ya; Yi, Hemian; Zhao, Lin; Liu, Guodong; He, Shaolong; Dong, Xiaoli; Zhang, Jun; Xu, Zuyan; Chen, Chuangtian; Cao, Gang; Dai, Xi; Fang, Zhong; Zhou, X. J.

2015-01-01

The low energy electronic structure of Sr2IrO4 has been well studied and understood in terms of an effective Jeff = 1/2 Mott insulator model. However, little work has been done in studying its high energy electronic behaviors. Here we report a new observation of the anomalous high energy electronic structure in Sr2IrO4. By taking high-resolution angle-resolved photoemission measurements on Sr2IrO4 over a wide energy range, we have revealed for the first time that the high energy electronic structures show unusual nearly-vertical bands that extend over a large energy range. Such anomalous high energy behaviors resemble the high energy waterfall features observed in the cuprate superconductors. While strong electron correlation plays an important role in producing high energy waterfall features in the cuprate superconductors, the revelation of the high energy anomalies in Sr2IrO4, which exhibits strong spin-orbit coupling and a moderate electron correlation, points to an unknown and novel route in generating exotic electronic excitations. PMID:26267653

Method of obtaining graphene and graphene-based electronic components and circuits with pencil directly on paper

NASA Astrophysics Data System (ADS)

Mailian, Aram; Mailian, Manvel; Shmavonyan, Gagik

2014-03-01

An easy method of obtaining graphene and graphene-based electronic components and circuits by drawing lines or repeatedly rubbing any type of graphite rod along the same path directly on paper and other insulating substrates is suggested. The structure containing rubbed-off layers behaves like a semiconducting material. The surface of the structure demonstrates ordered and oriented character containing few layer graphene. The carrier mobility is anisotropic through the thickness of the structure with the highest value of ~ 104 cm2/V .sec at the surface. Raman spectra of the structures in the near IR at excitation wavelength of 976 nm (1.27 eV) are registered. The observed phenomenon is universal, does not depend on the material of the substrate and could find a widespread application. For example, the junction between two rubbed off layers with different mobilities exhibits a non-Ohmic behavior. I-V characteristic of the junction is symmetrically curved with respect to 0 V. The greater is the difference between the carrier mobility, the higher is the curvature. The dynamic accumulation of the carriers in both sides of the junction creates a barrier responsible for non-Ohmic behavior.

Thermally Activated Motion of Sodium Cations in Insulating Parent Low-Silica X Zeolite

NASA Astrophysics Data System (ADS)

Igarashi, Mutsuo; Jeglič, Peter; Mežnaršič, Tadej; Nakano, Takehito; Nozue, Yasuo; Watanabe, Naohiro; Arčon, Denis

2017-07-01

We report a 23Na spin-lattice relaxation rate, T1 - 1, in low-silica X zeolite. T1 - 1 follows multiple BPP-type behavior as a result of thermal motion of sodium cations in insulating material. The estimated lowest activation energy of 15 meV is much lower than 100 meV observed previously for sodium motion in heavily Na-loaded samples and is most likely attributed to short-distance jumps of sodium cations between sites within the same supercage.

Electrical transport of spin-polarized carriers in disordered ultrathin films.

PubMed

Hernandez, L M; Bhattacharya, A; Parendo, Kevin A; Goldman, A M

2003-09-19

Slow, nonexponential relaxation of electrical transport accompanied by memory effects has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which is very similar to space-charge limited current flow, is found in extremely thin films well on the insulating side of the thickness-tuned superconductor-insulator transition. It may be the signature of a collective state that forms when the carriers are spin polarized at low temperatures and in high magnetic fields.

Transcriptional insulation of the human keratin 18 gene in transgenic mice.

PubMed Central

Neznanov, N; Thorey, I S; Ceceña, G; Oshima, R G

1993-01-01

Expression of the 10-kb human keratin 18 (K18) gene in transgenic mice results in efficient and appropriate tissue-specific expression in a variety of internal epithelial organs, including liver, lung, intestine, kidney, and the ependymal epithelium of brain, but not in spleen, heart, or skeletal muscle. Expression at the RNA level is directly proportional to the number of integrated K18 transgenes. These results indicate that the K18 gene is able to insulate itself both from the commonly observed cis-acting effects of the sites of integration and from the potential complications of duplicated copies of the gene arranged in head-to-tail fashion. To begin to identify the K18 gene sequences responsible for this property of transcriptional insulation, additional transgenic mouse lines containing deletions of either the 5' or 3' distal end of the K18 gene have been characterized. Deletion of 1.5 kb of the distal 5' flanking sequence has no effect upon either the tissue specificity or the copy number-dependent behavior of the transgene. In contrast, deletion of the 3.5-kb 3' flanking sequence of the gene results in the loss of the copy number-dependent behavior of the gene in liver and intestine. However, expression in kidney, lung, and brain remains efficient and copy number dependent in these transgenic mice. Furthermore, herpes simplex virus thymidine kinase gene expression is copy number dependent in transgenic mice when the gene is located between the distal 5'- and 3'-flanking sequences of the K18 gene. Each adult transgenic male expressed the thymidine kinase gene in testes and brain and proportionally to the number of integrated transgenes. We conclude that the characteristic of copy number-dependent expression of the K18 gene is tissue specific because the sequence requirements for transcriptional insulation in adult liver and intestine are different from those for lung and kidney. In addition, the behavior of the transgenic thymidine kinase gene in testes and brain suggests that the property of transcriptional insulation of the K18 gene may be conferred by the distal flanking sequences of the K18 gene and, additionally, may function for other genes. Images PMID:7681143

Minnesota retrofit insulation in situ test program

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1978-06-01

The use of cellulose, glass fiber, rock/slag fiber and urea formaldehyde installed as retrofit insulation materials in residential walls and ceilings was studied. Homes were selected for testing according to the type of retrofit insulation, age of retrofit insulation and whether the retrofit was in the wall or ceiling. The total project was comprised of 22 wall and 48 ceiling samples. Samples of retrofit insulation were taken from an area of three to four square feet in the ceiling or wall of the home. The sample volume was measured, the sample removed and double-sealed in polyethylene bags. The samples weremore » shipped to the laboratory for testing. Laboratory measurements were made of density, moisture content, thermal resistance, and relative flammability of each sample. Additionally, the friability and compressive strength of each urea-formaldehyde foam sample was measured. The following results were obtained. Cellulosic loose fill insulation tests indicated that settling and moisture build-up are not serious problems. Flammability is a concern. Age did not affect the properties of the cellulosic loose fill, but fungal growth was evident. Shrinkage, ranging from 2.5 to 9 percent, averaging 4.5 percent, was exhibited. Degradation of the foam samples with time did not occur. Density was the most critical property affecting the other properties. The higher the density, the higher the thermal resistence per inch, the lower the friability and the higher the compressive strength. The accurate prediction of the fiber diameter, amount of unfiberized mineral, and extent of modular clumping thermal resistance of loose fill mineral fiber insulations is related to and is not solely a factor of density. The materials in this sample did not noticeably affect the structure or wiring of the retrofitted homes. (LCL)« less

Self-energy behavior away from the Fermi surface in doped Mott insulators.

PubMed

Merino, J; Gunnarsson, O; Kotliar, G

2016-02-03

We analyze self-energies of electrons away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole doping, the magnitude of the self-energy for imaginary frequencies at the top of the band ([Formula: see text]) is enhanced with respect to the self-energy magnitude at the bottom of the band ([Formula: see text]). The self-energy behavior at these two [Formula: see text]-points is switched for electron doping. Although the hybridization is much larger for (0, 0) than for [Formula: see text], we demonstrate that this is not the origin of this difference. Isolated clusters under a downward shift of the chemical potential, [Formula: see text], at half-filling reproduce the overall self-energy behavior at (0, 0) and [Formula: see text] found in low hole doped embedded clusters. This happens although there is no change in the electronic structure of the isolated clusters. Our analysis shows that a downward shift of the chemical potential which weakly hole dopes the Mott insulator can lead to a large enhancement of the [Formula: see text] self-energy for imaginary frequencies which is not associated with electronic correlation effects, even in embedded clusters. Interpretations of the strength of electronic correlations based on self-energies for imaginary frequencies are, in general, misleading for states away from the Fermi surface.

Smart window coating based on F-TiO2-KxWO3 nanocomposites with heat shielding, ultraviolet isolating, hydrophilic and photocatalytic performance

PubMed Central

Liu, Tongyao; Liu, Bin; Wang, Jing; Yang, Linfen; Ma, Xinlong; Li, Hao; Zhang, Yihong; Yin, Shu; Sato, Tsugio; Sekino, Tohru; Wang, Yuhua

2016-01-01

A series of smart window coated multifunctional NIR shielding-photocatalytic films were fabricated successfully through KxWO3 and F-TiO2 in a low-cost and environmentally friendly process. Based on the synergistic effect of KxWO3 and F-TiO2, the optimal proportion of KxWO3 to F-TiO2 was investigated and the FT/2KWO nanocomposite film exhibited strong near-infrared, ultraviolet light shielding ability, good visible light transmittance, high photocatalytic activity and excellent hydrophilic capacity. This film exhibited better thermal insulation capacity than ITO and higher photocatalytic activity than P25. Meanwhile, the excellent stability of this film was examined by the cycle photocatalytic degradation and thermal insulation experiments. Overall, this work is expected to provide a possibility in integrating KxWO3 with F-TiO2, so as to obtain a multifunctional NIR shielding-photocatalytic nanocomposite film in helping solve the energy crisis and deteriorating environmental issues. PMID:27265778

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

PubMed

Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

2015-08-10

We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.

A Micromechanics Finite Element Model for Studying the Mechanical Behavior of Spray-On Foam Insulation (SOFI)

NASA Technical Reports Server (NTRS)

Ghosn, Louis J.; Sullivan, Roy M.; Lerch, Bradley A.

2006-01-01

A micromechanics model has been constructed to study the mechanical behavior of spray-on foam insulation (SOFI) for the external tank. The model was constructed using finite elements representing the fundamental repeating unit of the SOFI microstructure. The details of the micromechanics model were based on cell observations and measured average cell dimensions discerned from photomicrographs. The unit cell model is an elongated Kelvin model (fourteen-sided polyhedron with 8 hexagonal and six quadrilateral faces), which will pack to a 100% density. The cell faces and cell edges are modeled using three-dimensional 20-node brick elements. Only one-eighth of the cell is modeled due to symmetry. By exercising the model and correlating the results with the macro-mechanical foam behavior obtained through material characterization testing, the intrinsic stiffness and Poisson s Ratio of the polymeric cell walls and edges are determined as a function of temperature. The model is then exercised to study the unique and complex temperature-dependent mechanical behavior as well as the fracture initiation and propagation at the microscopic unit cell level.

Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

NASA Astrophysics Data System (ADS)

Demidov, E. V.; Grabov, V. M.; Komarov, V. A.; Kablukova, N. S.; Krushel'nitskii, A. N.

2018-03-01

The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

Organic memory device with self-assembly monolayered aptamer conjugated nanoparticles

NASA Astrophysics Data System (ADS)

Oh, Sewook; Kim, Minkeun; Kim, Yejin; Jung, Hunsang; Yoon, Tae-Sik; Choi, Young-Jin; Jung Kang, Chi; Moon, Myeong-Ju; Jeong, Yong-Yeon; Park, In-Kyu; Ho Lee, Hyun

2013-08-01

An organic memory structure using monolayered aptamer conjugated gold nanoparticles (Au NPs) as charge storage nodes was demonstrated. Metal-pentacene-insulator-semiconductor device was adopted for the non-volatile memory effect through self assembly monolayer of A10-aptamer conjugated Au NPs, which was formed on functionalized insulator surface with prostate-specific membrane antigen protein. The capacitance versus voltage (C-V) curves obtained for the monolayered Au NPs capacitor exhibited substantial flat-band voltage shift (ΔVFB) or memory window of 3.76 V under (+/-)7 V voltage sweep. The memory device format can be potentially expanded to a highly specific capacitive sensor for the aptamer-specific biomolecule detection.

Exfoliated BN shell-based high-frequency magnetic core-shell materials.

PubMed

Zhang, Wei; Patel, Ketan; Ren, Shenqiang

2017-09-14

The miniaturization of electric machines demands high frequency magnetic materials with large magnetic-flux density and low energy loss to achieve a decreased dimension of high rotational speed motors. Herein, we report a solution-processed high frequency magnetic composite (containing a nanometal FeCo core and a boron nitride (BN) shell) that simultaneously exhibits high electrical resistivity and magnetic permeability. The frequency dependent complex initial permeability and the mechanical robustness of nanocomposites are intensely dependent on the content of BN insulating phase. The results shown here suggest that insulating magnetic nanocomposites have potential for application in next-generation high-frequency electric machines with large electrical resistivity and permeability.

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

NASA Astrophysics Data System (ADS)

Lee, K.; Lee, T. Y.; Yang, S. M.; Lee, D. H.; Park, J.; Chae, S. C.

2018-05-01

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures.

Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

NASA Astrophysics Data System (ADS)

Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

2013-03-01

By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

Andreev Reflection Spectroscopy of Nb-doped Bi2Se3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kurter, C.; Finck, A. D. K.; Qiu, Y.; Huemiller, E.; Weis, A.; Atkinson, J.; Medvedeva, J.; Hor, Y. S.; van Harlingen, D. J.

2015-03-01

Doped topological insulators are speculated to realize p-wave superconductivity with unusual low energy quasiparticles, such as surface Andreev bound states. We present point contact spectroscopy of thin exfoliated flakes of Nb-doped Bi2Se3 where superconductivity persists up to ~ 1 K, compared to 3.2 K in bulk crystals. The critical magnetic field is strongly anisotropic, consistent with quasi-2D behavior. Andreev reflection measurements of devices with low resistance contacts result in prominent BTK-like behavior with an enhanced conductance plateau at low bias. For high resistance contacts, we observe a split zero bias conductance anomaly and additional features at the superconducting gap. Our results suggest that this material is a promising platform for studying topological superconductivity. We acknowledge support from Microsoft Project Q.

Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.

PubMed

Kwon, Jeong Hyun; Park, Junhong; Lee, Myung Keun; Park, Jeong Woo; Jeon, Yongmin; Shin, Jeong Bin; Nam, Minwoo; Kim, Choong-Ki; Choi, Yang-Kyu; Choi, Kyung Cheol

2018-05-09

The lack of reliable, transparent, and flexible electrodes and insulators for applications in thin-film transistors (TFTs) makes it difficult to commercialize transparent, flexible TFTs (TF-TFTs). More specifically, conventional high process temperatures and the brittleness of these elements have been hurdles in developing flexible substrates vulnerable to heat. Here, we propose electrode and insulator fabrication techniques considering process temperature, transmittance, flexibility, and environmental stability. A transparent and flexible indium tin oxide (ITO)/Ag/ITO (IAI) electrode and an Al 2 O 3 /MgO (AM)-laminated insulator were optimized at the low temperature of 70 °C for the fabrication of TF-TFTs on a polyethylene terephthalate (PET) substrate. The optimized IAI electrode with a sheet resistance of 7 Ω/sq exhibited the luminous transmittance of 85.17% and maintained its electrical conductivity after exposure to damp heat conditions because of an environmentally stable ITO capping layer. In addition, the electrical conductivity of IAI was maintained after 10 000 bending cycles with a tensile strain of 3% because of the ductile Ag film. In the metal/insulator/metal structure, the insulating and mechanical properties of the optimized AM-laminated film deposited at 70 °C were significantly improved because of the highly dense nanolaminate system, compared to those of the Al 2 O 3 film deposited at 70 °C. In addition, the amorphous indium-gallium-zinc oxide (a-IGZO) was used as the active channel for TF-TFTs because of its excellent chemical stability. In the environmental stability test, the ITO, a-IGZO, and AM-laminated films showed the excellent environmental stability. Therefore, our IGZO-based TFT with IAI electrodes and the 70 °C AM-laminated insulator was fabricated to evaluate robustness, transparency, flexibility, and process temperature, resulting in transfer characteristics comparable to those of an IGZO-based TFT with a 150 °C Al 2 O 3 insulator.

Role of structurally and magnetically modified nanoclusters in colossal magnetoresistance

PubMed Central

Tao, Jing; Niebieskikwiat, Dario; Jie, Qing; Schofield, Marvin A.; Wu, Lijun; Li, Qiang; Zhu, Yimei

2011-01-01

It is generally accepted that electronic and magnetic phase separation is the origin of many of exotic properties of strongly correlated electron materials, such as colossal magnetoresistance (CMR), an unusually large variation in the electrical resistivity under applied magnetic field. In the simplest picture, the two competing phases are those associated with the material state on either side of the phase transition. Those phases would be paramagnetic insulator and ferromagnetic metal for the CMR effect in doped manganites. It has been speculated that a critical component of the CMR phenomenon is nanoclusters with quite different properties than either of the terminal phases during the transition. However, the role of these nanoclusters in the CMR effect remains elusive because the physical properties of the nanoclusters are hard to measure when embedded in bulk materials. Here we show the unexpected behavior of the nanoclusters in the CMR compound La1-xCaxMnO3 (0.4 ≤ x < 0.5) by directly correlating transmission electron microscopy observations with bulk measurements. The structurally modified nanoclusters at the CMR temperature were found to be ferromagnetic and exhibit much higher electrical conductivity than previously proposed. Only at temperatures much below the CMR transition, the nanoclusters are antiferromagnetic and insulating. These findings substantially alter the current understanding of these nanoclusters on the material’s functionality and would shed light on the microscopic study on the competing spin-lattice-charge orders in strongly correlated systems. PMID:22160678

First-principles many-body investigation of δ-doped titanates

NASA Astrophysics Data System (ADS)

Lechermann, Frank; Obermeyer, Michael

2015-03-01

Studying oxide heterostructures provides the possibility for exploring novel composite materials beyond nature's original conception. In this respect, the doping of Mott-insulating distorted-perovskite titanates such as LaTiO3 and GdTiO3 with a single SrO layer gives rise to a very rich correlated electronic structure. A realistic superlattice survey by means of the charge self-consistent combination of density functional theory (DFT) with dynamical mean-field theory (DMFT) reveals layer- and temperature-dependent multi-orbital metal-insulator transitions. In [001] stacking, an orbital-selective metallic layer at the interface dissolves via an orbital-polarized doped-Mott state into an orbital-ordered insulating regime beyond the two conducting TiO2 layers. We find large differences in the scattering behavior within the latter. Breaking the spin symmetry in δ-doped GdTiO3 results in blocks of ferromagnetic itinerant and ferromagnetic Mott-insulating layers which are coupled antiferromagnetically. Support from the DFG-FOR1346 is acknowledged.

Ground state of underdoped cuprates in vicinity of superconductor-to-insulator transition

DOE PAGES

Wu, Jie; Bollinger, Anthony T.; Sun, Yujie; ...

2016-08-15

When an insulating underdoped cuprate is doped beyond a critical concentration (x c), high-temperature superconductivity emerges. We have synthesized a series of La 2–xSr xCuO 4 (LSCO) samples using the combinatorial spread technique that allows us to traverse the superconductor-to-insulator transition (SIT) in extremely fine doping steps, Δx≈0.00008. We have measured the Hall resistivity (ρ H) as a function of temperature down to 300 mK in magnetic fields up to 9 T. At very low temperatures, ρ H shows an erratic behavior, jumps and fluctuations exceeding 100%, hysteresis, and memory effects, indicating that the insulating ground state is a charge-clustermore » glass (CCG). Furthermore, based on the phase diagram depicted in our experiment, we propose a unified picture to account for the anomalous electric transport in the vicinity of the SIT, suggesting that the CCG is in fact a disordered and glassy version of the charge density wave.« less

Nanoscale orbital excitations and the infrared spectrum of a molecular Mott insulator: A15-Cs3C60.

PubMed

Naghavi, S S; Fabrizio, M; Qin, T; Tosatti, E

2016-10-14

The quantum physics of ions and electrons behind low-energy spectra of strongly correlated molecular conductors, superconductors and Mott insulators is poorly known, yet fascinating especially in orbitally degenerate cases. The fulleride insulator Cs 3 C 60 (A15), one such system, exhibits infrared (IR) spectra with low temperature peak features and splittings suggestive of static Jahn-Teller distortions with a breakdown of orbital symmetry in the molecular site. That is puzzling, since there is no detectable static distortion, and because the features and splittings disappear upon modest heating, which they should not. Taking advantage of the Mott-induced collapse of electronic wavefunctions from lattice-extended to nanoscale localized inside a caged molecular site, we show that the unbroken spin and orbital symmetry of the ion multiplets explains the IR spectrum without adjustable parameters. This demonstrates the importance of a fully quantum treatment of nuclear positions and orbital momenta in the Mott insulator sites, dynamically but not statically distorted. The observed demise of these features with temperature is explained by the thermal population of a multiplet term whose nuclear positions are essentially undistorted, but whose energy is very low-lying. That term is in fact a scaled-down orbital excitation analogous to that of other Mott insulators, with the same spin 1/2 as the ground state, but with a larger orbital momentum of two instead of one.

Dirac Fermions without bulk backscattering in rhombohedral topological insulators

NASA Astrophysics Data System (ADS)

Mera Acosta, Carlos; Lima, Matheus; Seixas, Leandro; da Silva, Antônio; Fazzio, Adalberto

2015-03-01

The realization of a spintronic device using topological insulators is not trivial, because there are inherent difficulties in achieving the surface transport regime. The majority of 3D topological insulators materials (3DTI) despite of support helical metallic surface states on an insulating bulk, forming topological Dirac fermions protected by the time-reversal symmetry, exhibit electronic scattering channels due to the presence of residual continuous bulk states near the Dirac-point. From ab initio calculations, we studied the microscopic origin of the continuous bulk states in rhombohedral topological insulators materials with the space group D3d 5 (R 3 m) , showing that it is possible to understand the emergence of residual continuous bulk states near the Dirac-point into a six bands effective model, where the breaking of the R3 symmetry beyond the Γ point has an important role in the hybridization of the px, py and pz atomic orbitals. Within these model, the mechanisms known to eliminate the bulk scattering, for instance: the stacking faults (SF), electric field and alloy, generated the similar effect in the effective states of the 3DTI. Finally, we show how the surface electronic transport is modified by perturbations of bulk with SF. We would like to thank the financial support by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP).

Vibration Considerations for Cryogenic Tanks Using Glass Bubbles Insulation

NASA Technical Reports Server (NTRS)

Werlink, Rudolph J.; Fesmire, James E.; Sass, Jared P.

2011-01-01

The use of glass bubbles as an efficient and practical thermal insulation system has been previously demonstrated in cryogenic storage tanks. One such example is a spherical, vacuum-jacketed liquid hydrogen vessel of 218,000 liter capacity where the boiloff rate has been reduced by approximately 50 percent. Further applications may include non-stationary tanks such as mobile tankers and tanks with extreme duty cycles or exposed to significant vibration environments. Space rocket launch events and mobile tanker life cycles represent two harsh cases of mechanical vibration exposure. A number of bulk fill insulation materials including glass bubbles, perlite powders, and aerogel granules were tested for vibration effects and mechanical behavior using a custom design holding fixture subjected to random vibration on an Electrodynamic Shaker. The settling effects for mixtures of insulation materials were also investigated. The vibration test results and granular particle analysis are presented with considerations and implications for future cryogenic tank applications. A thermal performance update on field demonstration testing of a 218,000 L liquid hydrogen storage tank, retrofitted with glass bubbles, is presented. KEYWORDS: Glass bubble, perlite, aerogel, insulation, liquid hydrogen, storage tank, mobile tanker, vibration.

Studying radiolytic ageing of nuclear power plant electric cables with FTIR spectroscopy.

PubMed

Levet, A; Colombani, J; Duponchel, L

2017-09-01

Due to the willingness to extend the nuclear power plants length of life, it is of prime importance to understand long term ageing effect on all constitutive materials. For this purpose gamma-irradiation effects on insulation of instrumentation and control cables are studied. Mid-infrared spectroscopy and principal components analysis (PCA) were used to highlight molecular modifications induced by gamma-irradiation under oxidizing conditions. In order to be closer to real world conditions, a low dose rate of 11Gyh -1 was used to irradiate insulations in full cable or alone with a dose up to 58 kGy. Spectral differences according to irradiation dose were extracted using PCA. It was then possible to observe different behaviors of the insulation constitutive compounds i.e. ethylene vinyl acetate (EVA), ethylene propylene diene monomer (EPDM) and aluminium trihydrate (ATH). Irradiation of insulations led to the oxidation of their constitutive polymers and a modification of filler-polymer ratio. Moreover all these modifications were observed for insulations alone or in full cable indicating that oxygen easily diffuses into the material. Spectral contributions were discussed considering different degradation mechanisms. Copyright © 2017 Elsevier B.V. All rights reserved.

Metal-as-insulation variant of no-insulation HTS winding technique: pancake tests under high background magnetic field and high current at 4.2 K

NASA Astrophysics Data System (ADS)

Lécrevisse, T.; Badel, A.; Benkel, T.; Chaud, X.; Fazilleau, P.; Tixador, P.

2018-05-01

In the framework of a project aiming at fabricating a 10 T high temperature superconducting (HTS) insert to operate in a 20 T background field, we are investigating the behavior of pancakes consisting of a REBCO HTS tape co-wound with a stainless steel tape (metal-as-insulation (MI) coil). The MI winding is inducing a significant turn-to-turn electrical resistance which helps to reduce the charging time delay. Despite this resistance, the self-protection feature of no-insulation coils is still enabled, thanks to the voltage limit of the power supply. We have built a single pancake coil representative of the pancake that will be used in the insert and performed tests under very high background magnetic field. Our coil experienced over 100 heater induced quenches without a measureable increase of its internal resistance. We have gathered stability and quench behavior data for magnetic fields and engineering current densities (je ) in the range of 0–17 T and 0–635 A mm‑2 respectively. We also present our very first experiments on the insert/outsert interaction in the case of a resistive magnet fault. We show that if self-protection of the MI winding is really effective in the case of a MI coil quench, a major issue comes from the outsert fault which induces a huge current inside the MI coil.

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

Annealing effects on electrical behavior of gold nanoparticle film: Conversion of ohmic to non-ohmic conductivity

NASA Astrophysics Data System (ADS)

Ebrahimpour, Zeinab; Mansour, Nastaran

2017-02-01

This paper reports on the electrical behavior of self-assembled gold nanoparticle films before and after high-temperature annealing in ambient environment. These films are made by depositing gold nanoparticles from a colloidal solution on glass substrates using centrifuge deposition technique. The current-voltage (I-V) characteristics of these films exhibits ohmic and non-ohmic properties for un-annealed and annealed films respectively. As the annealing time duration increases, the onset of non-ohmic behavior occurs at higher voltages. To understand the underlying mechanisms for the observed electrical conduction behavior in these films and how electrical conduction is effected by film morphology and structural properties before and after annealing, systematic comparative studies based on scanning electron microscopy (SEM), UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) have been performed. The morphology of the films shows that the assembled gold nanoparticles are distributed on the substrate in a random way before annealing. After 2 h annealing gold nanoparticles exhibit a higher filling fraction when examined by SEM, which means that they coalesce, upon annealing, with respect to un-annealed films. The UV-vis absorption spectra of the films show that there is a red-shift and broadening in the absorption band for the annealed films. The observed phenomenon is related to the plasmon near-field coupling effect and suggests that the nanoparticle ensembles interspacing has decreased. The structural and crystallinity of the films exhibit amorphous structure before annealing and pure crystalline phases with a preferential growth direction along the (111) plane after annealing. The XPS analysis further suggests the existence of the stable thin oxide layer in the phase of Au2O3 in the annealed films. The I-V characteristics have been described by Simmons' model for tunnel transport through metal-insulator-metal (MIM) junctions. The Fowler-Nordheim (F-N) plots show the transition of the in-plane charge transport mechanism from direct tunneling to field emission in annealed films. Our results suggest that, the formation of a thin layer of Au2O3 , the proximity of the nanoparticles as well as their higher filling fraction are important parameters related with the tunneling process enhancement. The observed non-ohmic conductivity property can make these self-assembled gold nanoparticle films very useful structures in different applications such as sensing, resistors and other nanoelectronic applications.

Novel electrorheological properties of a metal-organic framework Cu3(BTC)2.

PubMed

Liu, Ying Dan; Kim, Jun; Ahn, Wha-Seung; Choi, Hyoung Jin

2012-06-07

A metal-organic framework, Cu(3)(BTC)(2), was synthesized and applied as an electro-responsive electrorheological material dispersed in insulating oil. Powder of crystalline Cu(3)(BTC)(2) exhibited excellent chain-like structures and controllable rheological properties in an applied electric field.

Normal metal - insulator - superconductor thermometers and coolers with titanium-gold bilayer as the normal metal

NASA Astrophysics Data System (ADS)

Räisänen, I. M. W.; Geng, Z.; Kinnunen, K. M.; Maasilta, I. J.

2018-03-01

We have fabricated superconductor - insulator - normal metal - insulator - superconductor (SINIS) tunnel junctions in which Al acts as the superconductor, AlOx is the insulator, and the normal metal consists of a thin Ti layer (5 nm) covered with a thicker Au layer (40 nm). We have characterized the junctions by measuring their current-voltage curves between 60 mK and 750 mK. For comparison, the same measurements have been performed for a SINIS junction pair whose normal metal is Cu. The Ti-Au bilayer decreases the SINIS tunneling resistance by an order of magnitude compared to junctions where Cu is used as normal metal, made with the same oxidation parameters. The Ti-Au devices are much more robust against chemical attacks, and their lower tunneling resistance makes them more robust against static charge. More significantly, they exhibit significantly stronger electron cooling than Cu devices with identical fabrication steps, when biased close to the energy gap of the superconducting Al. By using a self-consistent thermal model, we can fit the current-voltage characteristics well, and show an electron cooling from 200 mK to 110 mK, with a non-optimized device.

Observation of non-Fermi liquid behavior in hole-doped Eu2Ir2O7

NASA Astrophysics Data System (ADS)

Banerjee, A.; Sannigrahi, J.; Giri, S.; Majumdar, S.

2017-12-01

The Weyl semimetallic compound Eu2Ir2O7 and its hole-doped derivatives (which are achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic, and calorimetric studies. The metal-insulator transition (MIT) temperature is found to get substantially reduced with hole doping, and for 10% Sr doping the composition is metallic down to temperature as low as 5 K. These doped compositions are found to violate the Mott-Ioffe-Regel condition for minimum electrical conductivity and show a distinct signature of non-Fermi liquid behavior at low temperature. The MIT in the doped compounds does not correlate with the magnetic transition point, and Anderson-Mott-type disorder-induced localization may be attributed to the ground-state insulating phase. The observed non-Fermi liquid behavior can be understood on the basis of disorder-induced distribution of the spin-orbit-coupling parameter, which is markedly different in the case of Ir4 + and Ir5 + ions.

Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarachik, Myriam P.

2015-02-20

STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectricmore » power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.« less

Dynamic conductivity from audio to optical frequencies of semiconducting manganites approaching the metal-insulator transition

NASA Astrophysics Data System (ADS)

Lunkenheimer, P.; Mayr, F.; Loidl, A.

2006-07-01

We report the frequency-dependent conductivity of the manganite system La1-xSrxMnO3 (x0.2) when approaching the metal-insulator transition from the insulating side. Results from low-frequency dielectric measurements are combined with spectra in the infrared region. For low doping levels the behavior is dominated by hopping transport of localized charge carriers at low frequencies and by phononic and electronic excitations in the infrared region. For the higher Sr contents the approach of the metallic state is accompanied by the successive suppression of the hopping contribution at low frequencies and by the development of polaronic excitations in the infrared region, which finally become superimposed by a strong Drude contribution in the fully metallic state.

Structural Continuum Modeling of Space Shuttle External Tank Foam Insulation

NASA Technical Reports Server (NTRS)

Steeve, Brian; Ayala, Sam; Purlee, T. Eric; Shaw, Phillip

2006-01-01

The Space Shuttle External Tank is covered with rigid polymeric closed-cell foam insulation to prevent ice formation, protect the metallic tank from aerodynamic heating, and control the breakup of the tank during re-entry. The cryogenic state of the tank, as well as the ascent into a vacuum environment, places this foam under significant stress. Because the loss of the foam during ascent poses a critical risk to the shuttle orbiter, there is much interest in understanding the stress state in the foam insulation and how it may contribute to fracture and debris loss. Several foam applications on the external tank have been analyzed using finite element methods. This presentation describes the approach used to model the foam material behavior and compares analytical results to experiments.

Identifying topological-band insulator transitions in silicene and other 2D gapped Dirac materials by means of Rényi-Wehrl entropy

NASA Astrophysics Data System (ADS)

Calixto, M.; Romera, E.

2015-02-01

We propose a new method to identify transitions from a topological insulator to a band insulator in silicene (the silicon equivalent of graphene) in the presence of perpendicular magnetic and electric fields, by using the Rényi-Wehrl entropy of the quantum state in phase space. Electron-hole entropies display an inversion/crossing behavior at the charge neutrality point for any Landau level, and the combined entropy of particles plus holes turns out to be maximum at this critical point. The result is interpreted in terms of delocalization of the quantum state in phase space. The entropic description presented in this work will be valid in general 2D gapped Dirac materials, with a strong intrinsic spin-orbit interaction, isostructural with silicene.

Direct visualization of a two-dimensional topological insulator in the single-layer 1 T'-WT e2

NASA Astrophysics Data System (ADS)

Jia, Zhen-Yu; Song, Ye-Heng; Li, Xiang-Bing; Ran, Kejing; Lu, Pengchao; Zheng, Hui-Jun; Zhu, Xin-Yang; Shi, Zhi-Qiang; Sun, Jian; Wen, Jinsheng; Xing, Dingyu; Li, Shao-Chun

2017-07-01

We have grown nearly freestanding single-layer 1 T'-WT e2 on graphitized 6 H -SiC(0001) by using molecular beam epitaxy (MBE), and characterized its electronic structure with scanning tunneling microscopy/spectroscopy (STM/STS). The existence of topological edge states at the periphery of single-layer WT e2 islands was confirmed. Surprisingly, a bulk band gap at the Fermi level and insulating behaviors were also found in single-layer WT e2 at low temperature, which are likely associated with an incommensurate charge order transition. The realization of two-dimensional topological insulators (2D TIs) in single-layer transition-metal dichalcogenide provides a promising platform for further exploration of the 2D TIs' physics and related applications.

Cable Bundle Wire Derating

NASA Technical Reports Server (NTRS)

Lundquist, Ray A.; Leidecker, Henning

1998-01-01

The allowable operating currents of electrical wiring when used in the space vacuum environment is predominantly determined by the maximum operating temperature of the wire insulation. For Kapton insulated wire this value is 200 C. Guidelines provided in the Goddard Space Flight Center (GSFC) Preferred Parts List (PPL) limit the operating current of wire within vacuum to ensure the maximum insulation temperature is not exceeded. For 20 AWG wire, these operating parameters are: 3.7 amps per wire, bundle of 15 or more wires, 70 C environment, and vacuum of 10(exp -5) torr or less. To determine the behavior and temperature of electrical wire at different operating conditions, a thermal vacuum test was performed on a representative electrical harness of the Hubble Space Telescope (HST) power distribution system. This paper describes the test and the results.

Transport phenomena in SrVO3/SrTiO3 superlattices

NASA Astrophysics Data System (ADS)

Gu, Man; Wolf, Stuart A.; Lu, Jiwei

2018-03-01

Epitaxial [(SrVO3)7/(SrTiO3)4] r (SVO/STO) superlattices were grown on (0 0 1)-oriented LSAT substrates using a pulsed electron-beam deposition technique. The transport properties of the superlattices were investigated by varying the number of repetitions of the SVO/STO bilayers r (1  ⩽  r  ⩽  9). A single SVO/STO bilayer (r  =  1) was semiconducting, whereas an increase in the number of repetitions r resulted in metallic behavior in the superlattices with r  ⩾  3. The transport phenomena in the SVO/STO superlattices can be regarded as conduction through parallel-coupled SVO layers, the SVO layer embedded in the superlattices showed a great enhancement in the conductivity compared with the single SVO layer. This work provides further evidence of electronic phase separation in the SVO ultrathin layer that has been recently discovered, the SVO ultrathin layer is considered as a 2D Mott insulator with metallic and insulating phases coexisting, the coupling between SVO layers embedded in the SVO/STO superlattices creates more conduction pathways with increasing number of repetitions r, resulting in a crossover from insulating to metallic behavior.

Coupled thermal-hydrological-mechanical behavior of rock mass surrounding a high-temperature thermal energy storage cavern at shallow depth

DOE PAGES

Park, Jung-Wook; Rutqvist, Jonny; Ryu, Dongwoo; ...

2016-01-15

The present study is aimed at numerically examining the thermal-hydrological-mechanical (THM) processes within the rock mass surrounding a cavern used for thermal energy storage (TES). We considered a cylindrical rock cavern with a height of 50 m and a radius of 10 m storing thermal energy of 350ºC as a conceptual TES model and simulated its operation for 30 years using THM coupled numerical modeling. At first, the insulator performance was not considered for the purpose of investigating the possible coupled THM behavior of the surrounding rock mass; then, the effects of an insulator were examined for different insulator thicknesses.more » The key concerns were focused on the hydro-thermal multiphase flow and heat transport in the rock mass around the thermal storage cavern, the effect of evaporation of rock mass, thermal impact on near the ground surface and the mechanical behavior of the surrounding rock mass. It is shown that the rock temperature around the cavern rapidly increased in the early stage and, consequently, evaporation of groundwater occurred, raising the fluid pressure. However, evaporation and multiphase flow did not have a significant effect on the heat transfer and mechanical behavior in spite of the high-temperature (350ºC) heat source. The simulations showed that large-scale heat flow around a cavern was expected to be conductiondominated for a reasonable value of rock mass permeability. Thermal expansion as a result of the heating of the rock mass from the storage cavern led to a ground surface uplift on the order of a few centimeters and to the development of tensile stress above the storage cavern, increasing the potentials for shear and tensile failures after a few years of the operation. Finally, the analysis showed that high tangential stress in proximity of the storage cavern can some shear failure and local damage, although large rock wall failure could likely be controlled with appropriate insulators and reinforcement.« less

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films.

PubMed

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-12-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu 1 - x Fe x O 3 - δ epitaxial thin films (x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu 1 - x Fe x O 3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR (~36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies (δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr 1 - x La x )(Ru 1 - x Fe x )O 3 . These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu 1 - x Fe x O 3 - δ thin films.

Fabrication and Properties of a Metal-Insulator - Type Oxygen Sensor Using Lanthanum Trifluoride as the Sole Dielectric.

NASA Astrophysics Data System (ADS)

Mattingly, William Brashear, III

1995-01-01

Oxygen sensors were fabricated using a metal-insulator -semiconductor construction where the sole 'insulator' is a thin film of LaF_3, an ionic conductor. The typical oxide or nitride layers were eliminated producing a simple Pt/LaF_3/Si design. LaF_3 films, 200-300nm thick, were directly deposited on n-type Si(111) using a high temperature effusion cell in an ultra high vacuum MBE chamber. The film morphology could be controlled from polycrystalline to near single crystal epitaxy. Epitaxial films exhibited a single relaxed variant with the LaF _3 c-axis normal to the silicon surface and the in-plane LaF_3(10^ -10) parallel to Si(110). Polycrystalline films also showed a high degree of LaF_3 c-axis normal texture. Films doped with strontium were also produced. Polycrystalline films were more robust and fabricated into MIS (metal-insulator-semiconductor) capacitors. Capacitance voltage tests of the devices demonstrate nearly ideal MIS capacitor behavior. The flatband voltages were typically within 300mV of the calculated value. Bias challenge tests developed in the lab showed less than 70mV flatband voltage shift. The dielectric constant of undoped LaF_3 films measured close to 14. Doped films, rm Sr_{x}La_ {1-x}F_3 x =.06, showed a dielectric constant of 275, at 100kHz. Oxygen partial pressure tests were performed with mixtures of dry nitrogen and dry oxygen. Oxygen partial pressures were varied between 2.5 times 10^{-4} and 1.0 atmosphere. The steady state data are consistent with a Pt/LaF _3 interface adsorption mechanism, where the work function of the platinum gate metal is modulated. The mechanism is not a half-cell Nernst-type response. Langmiur isotherm fitted data indicate the response range for undoped devices is 0.3 V. Signal drift was less than 5 mV/day. The metal free-surface reactions and the dipole species at the Pt/LaF_3 interface are yet to be determined. Device kinetic studies show the time required for full equilibration after a step in oxygen partial pressure is 24 hours at 90^circC. Initial response kinetics to downward steps in oxygen show the activation energy of the process is 0.54 eV.

University of Maryland MRSEC - News: Featured

Science.gov Websites

state at surface of bismuth selenide Completed device MRSEC research, published in NanoLetters ASAP in and M. S. Fuhrer, "Insulating behavior in ultrathin bismuth selenide field effect transistors

InP:Fe Photoconducting device

DOEpatents

Hammond, Robert B.; Paulter, Nicholas G.; Wagner, Ronald S.

1984-01-01

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

Minimizing the unpredictability of transgene expression in plants: the role of genetic insulators

USDA-ARS?s Scientific Manuscript database

The genetic transformation of plants has become a necessary tool for fundamental plant biology research, as well as the generation of engineered plants exhibiting improved agronomic and industrial traits. However, this technology is significantly hindered by the fact that transgene expression is hi...

InP:Fe photoconducting device

DOEpatents

Hammond, R.B.; Paulter, N.G.; Wagner, R.S.

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

Synthesis and characterization of F-doped Cs{sub 0.33}WO{sub 3−x}F{sub x} particles with improved near infrared shielding ability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jingxiao; Luo, Jiayu; Shi, Fei, E-mail: shifei@dlpu.edu.cn

2015-01-15

F-doped Cs{sub 0.33}WO{sub 3−x}F{sub x} particles were successfully synthesized by the hydrothermal method with hydrofluoric acid as fluorine source, and a new kind of heat insulating films were prepared from dispersion of Cs{sub 0.33}WO{sub 3−x}F{sub x} nanoparticles in polyvinyl alcohol (PVA) aqueous solution. The effects of F doping on the crystal structure and morphology of Cs{sub 0.33}WO{sub 3−x}F{sub x} particles as well as the near-infrared (NIR) shielding ability and heat insulation properties of Cs{sub 0.33}WO{sub 3−x}F{sub x} films were investigated. The results indicated that HF acid addition could promote the formation of rod-like Cs{sub 0.33}WO{sub 3−x}F{sub x} particles during hydrothermalmore » synthesis and increase the yield of Cs{sub 0.33}WO{sub 3−x}F{sub x} powders. Moreover, the as-prepared films from dispersion solution of Cs{sub 0.33}WO{sub 3−x}F{sub x} particles exhibited higher near-infrared (NIR) shielding ability and heat insulating properties than that of the undoped Cs{sub 0.33}WO{sub 3} film. Particularly, the as-prepared Cs{sub 0.33}WO{sub 3−x}F{sub x} sample with F/W (molar ratio)=0.45 showed best NIR shielding ability and transparent heat insulating performance. The formation mechanism of nanorod-like particles and the effects of F doping on the properties of Cs{sub 0.33}WO{sub 3−x}F{sub x} products were discussed. - Graphical abstract: F-doped Cs{sub 0.33}WO{sub 3−x}F{sub x} particles were successfully synthesized by the hydrothermal method with hydrofluoric acid as fluorine source. HF acid addition in the precursor solution could increase the yield of Cs{sub 0.33}WO{sub 3−x}F{sub x} powders and promote the formation of rod-like Cs{sub 0.33}WO{sub 3−x}F{sub x} particles. Moreover, the as-prepared Cs{sub 0.33}WO{sub 3−x}F{sub x} films from dispersion solution of Cs{sub 0.33}WO{sub 3−x}F{sub x} particles exhibited higher near-infrared (NIR) shielding ability and heat insulating properties than that of the undoped Cs{sub x}WO{sub 3} film. Particularly, the as-prepared Cs{sub 0.33}WO{sub 3−x}F{sub x} sample with F/W (molar ratio)=0.45 showed best NIR shielding ability and transparent heat insulating performance. - Highlights: • F-doped Cs{sub 0.33}WO{sub 3−x}F{sub x} powders were successfully synthesized by the hydrothermal method. • HF acid addition could promote the formation of rod-like Cs{sub 0.33}WO{sub 3−x}F{sub x} particles. • The near infrared shielding ability of Cs{sub 0.33}WO{sub 3} was further improved by F doping. • The Cs{sub 0.33}WO{sub 3−x}F{sub x} films exhibited higher transparent heat insulation than Cs{sub 0.33}WO{sub 3}.« less

Switching behaviors of graphene-boron nitride nanotube heterojunctions

DOE PAGES

Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; ...

2015-07-20

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

Parity-time symmetry-breaking mechanism of dynamic Mott transitions in dissipative systems

DOE PAGES

Tripathi, Vikram; Galda, Alexey; Barman, Himadri; ...

2016-07-05

Here, we describe the critical behavior of the electric field-driven (dynamic) Mott insulator-to-metal transitions in dissipative Fermi and Bose systems in terms of non-Hermitian Hamiltonians invariant under simultaneous parity (P) and time-reversal (T) operations. The dynamic Mott transition is identified as a PT symmetry-breaking phase transition, with the Mott insulating state corresponding to the regime of unbroken PT symmetry with a real energy spectrum. We also established that the imaginary part of the Hamiltonian arises from the combined effects of the driving field and inherent dissipation. We derive the renormalization and collapse of the Mott gap at the dielectric breakdownmore » and describe the resulting critical behavior of transport characteristics. The critical exponent we obtained is in an excellent agreement with experimental findings.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jung-Wook; Rutqvist, Jonny; Ryu, Dongwoo

The present study is aimed at numerically examining the thermal-hydrological-mechanical (THM) processes within the rock mass surrounding a cavern used for thermal energy storage (TES). We considered a cylindrical rock cavern with a height of 50 m and a radius of 10 m storing thermal energy of 350ºC as a conceptual TES model and simulated its operation for 30 years using THM coupled numerical modeling. At first, the insulator performance was not considered for the purpose of investigating the possible coupled THM behavior of the surrounding rock mass; then, the effects of an insulator were examined for different insulator thicknesses.more » The key concerns were focused on the hydro-thermal multiphase flow and heat transport in the rock mass around the thermal storage cavern, the effect of evaporation of rock mass, thermal impact on near the ground surface and the mechanical behavior of the surrounding rock mass. It is shown that the rock temperature around the cavern rapidly increased in the early stage and, consequently, evaporation of groundwater occurred, raising the fluid pressure. However, evaporation and multiphase flow did not have a significant effect on the heat transfer and mechanical behavior in spite of the high-temperature (350ºC) heat source. The simulations showed that large-scale heat flow around a cavern was expected to be conductiondominated for a reasonable value of rock mass permeability. Thermal expansion as a result of the heating of the rock mass from the storage cavern led to a ground surface uplift on the order of a few centimeters and to the development of tensile stress above the storage cavern, increasing the potentials for shear and tensile failures after a few years of the operation. Finally, the analysis showed that high tangential stress in proximity of the storage cavern can some shear failure and local damage, although large rock wall failure could likely be controlled with appropriate insulators and reinforcement.« less

Metal-insulator transition in nanocomposite VOx films formed by anodic electrodeposition

NASA Astrophysics Data System (ADS)

Tsui, Lok-kun; Hildebrand, Helga; Lu, Jiwei; Schmuki, Patrik; Zangari, Giovanni

2013-11-01

The ability to grow VO2 films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VOx films by anodic electrodeposition of V2O5, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO2 stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ˜ -2.4%/ °C from 20 to 140 °C.

Topological crystalline magnets: Symmetry-protected topological phases of fermions

DOE PAGES

Watanabe, Haruki; Fu, Liang

2017-02-27

Here, we introduce a novel class of interaction-enabled topological crystalline insulators in two- and three-dimensional electronic systems, which we call “topological crystalline magnet.” It is protected by the product of the time-reversal symmetry T and a mirror symmetry or a rotation symmetry R. A topological crystalline magnet exhibits two intriguing features: (i) it cannot be adiabatically connected to any Slater insulator and (ii) the edge state is robust against coupling electrons to the edge. These features are protected by the anomalous symmetry transformation property ( RT) 2 = -1 of the edge state. Finally, an anisotropic response to the externalmore » magnetic field can be an experimental signature.« less

Topological crystalline magnets: Symmetry-protected topological phases of fermions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watanabe, Haruki; Fu, Liang

Here, we introduce a novel class of interaction-enabled topological crystalline insulators in two- and three-dimensional electronic systems, which we call “topological crystalline magnet.” It is protected by the product of the time-reversal symmetry T and a mirror symmetry or a rotation symmetry R. A topological crystalline magnet exhibits two intriguing features: (i) it cannot be adiabatically connected to any Slater insulator and (ii) the edge state is robust against coupling electrons to the edge. These features are protected by the anomalous symmetry transformation property ( RT) 2 = -1 of the edge state. Finally, an anisotropic response to the externalmore » magnetic field can be an experimental signature.« less

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

NASA Astrophysics Data System (ADS)

Zhang, Hai-Jun; Chadov, Stanislav; Müchler, Lukas; Yan, Binghai; Qi, Xiao-Liang; Kübler, Jürgen; Zhang, Shou-Cheng; Felser, Claudia

2011-04-01

We investigate a new class of ternary materials such as LiAuSe and KHgSb with a honeycomb structure in Au-Se and Hg-Sb layers. We demonstrate the band inversion in these materials similar to HgTe, which is a strong precondition for existence of the topological surface states. In contrast with graphene, these materials exhibit strong spin-orbit coupling and a small direct band gap at the Γ point. Since these materials are centrosymmetric, it is straightforward to determine the parity of their wave functions, and hence their topological character. Surprisingly, the compound with strong spin-orbit coupling (KHgSb) is trivial, whereas LiAuSe is found to be a topological insulator.

Superlight, Mechanically Flexible, Thermally Superinsulating, and Antifrosting Anisotropic Nanocomposite Foam Based on Hierarchical Graphene Oxide Assembly.

PubMed

Peng, Qingyu; Qin, Yuyang; Zhao, Xu; Sun, Xianxian; Chen, Qiang; Xu, Fan; Lin, Zaishan; Yuan, Ye; Li, Ying; Li, Jianjun; Yin, Weilong; Gao, Chao; Zhang, Fan; He, Xiaodong; Li, Yibin

2017-12-20

Lightweight, high-performance, thermally insulating, and antifrosting porous materials are in increasing demand to improve energy efficiency in many fields, such as aerospace and wearable devices. However, traditional thermally insulating materials (porous ceramics, polymer-based sponges) could not simultaneously meet these demands. Here, we propose a hierarchical assembly strategy for producing nanocomposite foams with lightweight, mechanically flexible, superinsulating, and antifrosting properties. The nanocomposite foams consist of a highly anisotropic reduced graphene oxide/polyimide (abbreviated as rGO/PI) network and hollow graphene oxide microspheres. The hierarchical nanocomposite foams are ultralight (density of 9.2 mg·cm -3 ) and exhibit ultralow thermal conductivity of 9 mW·m -1 ·K -1 , which is about a third that of traditional polymer-based insulating materials. Meanwhile, the nanocomposite foams show excellent icephobic performance. Our results show that hierarchical nanocomposite foams have promising applications in aerospace, wearable devices, refrigerators, and liquid nitrogen/oxygen transportation.

First-order metal-insulator transitions in vanadates from first principles

NASA Astrophysics Data System (ADS)

Kumar, Anil; Rabe, Karin

2013-03-01

Materials that exhibit first-order metal-insulator transitions, with the accompanying abrupt change in the conductivity, have potential applications as switches in future electronic devices. Identification of materials and exploration of the atomic-scale mechanisms for switching between the two electronic states is a focus of current research. In this work, we search for first-order metal-insulator transitions in transition metal compounds, with a particular focus on d1 and d2 systems, by using first principles calculations to screen for an alternative low-energy state having not only a electronic character opposite to that of the ground state, but a distinct structure and/or magnetic ordering which would permit switching by an applied field or stress. We will present the results of our investigation of the perovskite compounds SrVO3, LaVO3, CaVO3, YVO3, LaTiO3 and related layered phase, including superlattices and Ruddlesden-Popper phases. While the pure compounds do not satisfy the search criteria, the layered phases show promising results.

Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device

NASA Astrophysics Data System (ADS)

Jauregui, Luis A.; Kayyalha, Morteza; Kazakov, Aleksandr; Miotkowski, Ireneusz; Rokhinson, Leonid P.; Chen, Yong P.

2018-02-01

We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MARs) in a bulk-insulating BiSbTeSe2 topological insulator nanoribbon (TINR) Josephson junction with superconducting Nb contacts. We observe a gate-tunable critical current (IC) for gate voltages (Vg) above the charge neutrality point (VCNP), with IC as large as 430 nA. We also observe MAR peaks in the differential conductance (dI/dV) versus DC voltage (Vdc) across the junction corresponding to sub-harmonic peaks (at Vdc = Vn = 2ΔNb/en, where ΔNb is the superconducting gap of the Nb contacts and n is the sub-harmonic order). The sub-harmonic order, n, exhibits a Vg-dependence and reaches n = 13 for Vg = 40 V, indicating the high transparency of the Nb contacts to TINR. Our observations pave the way toward exploring the possibilities of using TINR in topologically protected devices that may host exotic physics such as Majorana fermions.

Volume-wise destruction of the antiferromagnetic Mott insulating state through quantum tuning.

PubMed

Frandsen, Benjamin A; Liu, Lian; Cheung, Sky C; Guguchia, Zurab; Khasanov, Rustem; Morenzoni, Elvezio; Munsie, Timothy J S; Hallas, Alannah M; Wilson, Murray N; Cai, Yipeng; Luke, Graeme M; Chen, Bijuan; Li, Wenmin; Jin, Changqing; Ding, Cui; Guo, Shengli; Ning, Fanlong; Ito, Takashi U; Higemoto, Wataru; Billinge, Simon J L; Sakamoto, Shoya; Fujimori, Atsushi; Murakami, Taito; Kageyama, Hiroshi; Alonso, Jose Antonio; Kotliar, Gabriel; Imada, Masatoshi; Uemura, Yasutomo J

2016-08-17

RENiO3 (RE=rare-earth element) and V2O3 are archetypal Mott insulator systems. When tuned by chemical substitution (RENiO3) or pressure (V2O3), they exhibit a quantum phase transition (QPT) between an antiferromagnetic Mott insulating state and a paramagnetic metallic state. Because novel physics often appears near a Mott QPT, the details of this transition, such as whether it is first or second order, are important. Here, we demonstrate through muon spin relaxation/rotation (μSR) experiments that the QPT in RENiO3 and V2O3 is first order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value until it is suddenly destroyed at the QPT. These findings bring to light a surprising universality of the pressure-driven Mott transition, revealing the importance of phase separation and calling for further investigation into the nature of quantum fluctuations underlying the transition.

Volume-wise destruction of the antiferromagnetic Mott insulating state through quantum tuning

NASA Astrophysics Data System (ADS)

Frandsen, Benjamin A.; Liu, Lian; Cheung, Sky C.; Guguchia, Zurab; Khasanov, Rustem; Morenzoni, Elvezio; Munsie, Timothy J. S.; Hallas, Alannah M.; Wilson, Murray N.; Cai, Yipeng; Luke, Graeme M.; Chen, Bijuan; Li, Wenmin; Jin, Changqing; Ding, Cui; Guo, Shengli; Ning, Fanlong; Ito, Takashi U.; Higemoto, Wataru; Billinge, Simon J. L.; Sakamoto, Shoya; Fujimori, Atsushi; Murakami, Taito; Kageyama, Hiroshi; Alonso, Jose Antonio; Kotliar, Gabriel; Imada, Masatoshi; Uemura, Yasutomo J.

2016-08-01

RENiO3 (RE=rare-earth element) and V2O3 are archetypal Mott insulator systems. When tuned by chemical substitution (RENiO3) or pressure (V2O3), they exhibit a quantum phase transition (QPT) between an antiferromagnetic Mott insulating state and a paramagnetic metallic state. Because novel physics often appears near a Mott QPT, the details of this transition, such as whether it is first or second order, are important. Here, we demonstrate through muon spin relaxation/rotation (μSR) experiments that the QPT in RENiO3 and V2O3 is first order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value until it is suddenly destroyed at the QPT. These findings bring to light a surprising universality of the pressure-driven Mott transition, revealing the importance of phase separation and calling for further investigation into the nature of quantum fluctuations underlying the transition.

Ground-state oxygen holes and the metal–insulator transition in the negative charge-transfer rare-earth nickelates

PubMed Central

Bisogni, Valentina; Catalano, Sara; Green, Robert J.; Gibert, Marta; Scherwitzl, Raoul; Huang, Yaobo; Strocov, Vladimir N.; Zubko, Pavlo; Balandeh, Shadi; Triscone, Jean-Marc; Sawatzky, George; Schmitt, Thorsten

2016-01-01

The metal–insulator transition and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here we combine X-ray absorption and resonant inelastic X-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of rare-earth nickelates, taking NdNiO3 thin film as representative example. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for abundant oxygen holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy in line with recent models interpreting the metal–insulator transition in terms of bond disproportionation. PMID:27725665

Hallmarks of the Mott-metal crossover in the hole-doped pseudospin-1/2 Mott insulator Sr 2IrO 4

DOE PAGES

Cao, Yue; Wang, Qiang; Waugh, Justin A.; ...

2016-04-22

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. Here we investigate the evolution of electronic structure and dynamics of the hole-doped pseudospin-1/2 Mott insulator Sr 2 IrO 4 . The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple iconic low-energy features previously observedmore » in doped cuprates - pseudogaps, Fermi arcs and marginal-Fermi-liquid-like electronic scattering rates. We suggest these signatures are most likely an integral part of the material's proximity to the Mott state, rather than from many of the most claimed mechanisms, including preformed electron pairing, quantum criticality or density-wave formation.« less

Evidence for a new excitation at the interface between a high- T c superconductor and a topological insulator

DOE PAGES

Zareapour, Parisa; Hayat, Alex; Zhao, Shu Yang F.; ...

2014-12-09

In this research, high-temperature superconductors exhibit a wide variety of novel excitations. If contacted with a topological insulator, the lifting of spin rotation symmetry in the surface states can lead to the emergence of unconventional superconductivity and novel particles. In pursuit of this possibility, we fabricated high critical-temperature (T c ~ 85 K) superconductor/topological insulator (Bi₂Sr₂CaCu₂O₈₊ δ/Bi₂Te₂Se) junctions. Below 75 K, a zero-bias conductance peak (ZBCP) emerges in the differential conductance spectra of this junction. The magnitude of the ZBCP is suppressed at the same rate for magnetic fields applied parallel or perpendicular to the junction. Furthermore, it can stillmore » be observed and does not split up to at least 8.5 T. The temperature and magnetic field dependence of the excitation we observe appears to fall outside the known paradigms for a ZBCP.« less

Topological insulator bismuth selenide as a theranostic platform for simultaneous cancer imaging and therapy.

PubMed

Li, Juan; Jiang, Fei; Yang, Bo; Song, Xiao-Rong; Liu, Yan; Yang, Huang-Hao; Cao, Dai-Rong; Shi, Wen-Rong; Chen, Guo-Nan

2013-01-01

Employing theranostic nanoparticles, which combine both therapeutic and diagnostic capabilities in one dose, has promise to propel the biomedical field toward personalized medicine. Here we investigate the theranostic properties of topological insulator bismuth selenide (Bi2Se3) in in vivo and in vitro system for the first time. We show that Bi2Se3 nanoplates can absorb near-infrared (NIR) laser light and effectively convert laser energy into heat. Such photothermal conversion property may be due to the unique physical properties of topological insulators. Furthermore, localized and irreversible photothermal ablation of tumors in the mouse model is successfully achieved by using Bi2Se3 nanoplates and NIR laser irradiation. In addition, we also demonstrate that Bi2Se3 nanoplates exhibit strong X-ray attenuation and can be utilized for enhanced X-ray computed tomography imaging of tumor tissue in vivo. This study highlights Bi2Se3 nanoplates could serve as a promising platform for cancer diagnosis and therapy.

Gapless Andreev bound states in the quantum spin Hall insulator HgTe.

PubMed

Bocquillon, Erwann; Deacon, Russell S; Wiedenmann, Jonas; Leubner, Philipp; Klapwijk, Teunis M; Brüne, Christoph; Ishibashi, Koji; Buhmann, Hartmut; Molenkamp, Laurens W

2017-02-01

In recent years, Majorana physics has attracted considerable attention because of exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here, we report experimental evidence for topological superconductivity induced in a HgTe quantum well, a 2D topological insulator that exhibits the quantum spin Hall (QSH) effect. The a.c. Josephson effect demonstrates that the supercurrent has a 4π periodicity in the superconducting phase difference, as indicated by a doubling of the voltage step for multiple Shapiro steps. In addition, this response like that of a superconducting quantum interference device to a perpendicular magnetic field shows that the 4π-periodic supercurrent originates from states located on the edges of the junction. Both features appear strongest towards the QSH regime, and thus provide evidence for induced topological superconductivity in the QSH edge states.

Effect of impurity resonant states on optical and thermoelectric properties on the surface of a topological insulator.

PubMed

Zhong, Min; Li, Shuai; Duan, Hou-Jian; Hu, Liang-Bin; Yang, Mou; Wang, Rui-Qiang

2017-06-21

We investigate the thermoelectric effect on a topological insulator surface with particular interest in impurity-induced resonant states. To clarify the role of the resonant states, we calculate the dc and ac conductivities and the thermoelectric coefficients along the longitudinal direction within the full Born approximation. It is found that at low temperatures, the impurity resonant state with strong energy de-pendence can lead to a zero-energy peak in the dc conductivity, whose height is sensitively dependent on the strength of scattering potential, and even can reverse the sign of the thermopower, implying the switching from n- to p-type carriers. Also, we exhibit the thermoelectric signatures for the filling process of a magnetic band gap by the resonant state. We further study the impurity effect on the dynamic optical conductivity, and find that the resonant state also generates an optical conductivity peak at the absorption edge for the interband transition. These results provide new perspectives for understanding the doping effect on topological insulator materials.

Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator.

PubMed

Lee, Wook-Jae; Kim, Hyunseok; You, Jong-Bum; Huffaker, Diana L

2017-08-25

Compact on-chip light sources lie at the heart of practical nanophotonic devices since chip-scale photonic circuits have been regarded as the next generation computing tools. In this work, we demonstrate room-temperature lasing in 7 × 7 InGaAs/InGaP core-shell nanopillar array photonic crystals with an ultracompact footprint of 2300 × 2300 nm 2 , which are monolithically grown on silicon-on-insulator substrates. A strong lateral confinement is achieved by a photonic band-edge mode, which is leading to a strong light-matter interaction in the 7 × 7 nanopillar array, and by choosing an appropriate thickness of a silicon-on-insulator layer the band-edge mode can be trapped vertically in the nanopillars. The nanopillar array band-edge lasers exhibit single-mode operation, where the mode frequency is sensitive to the diameter of the nanopillars. Our demonstration represents an important first step towards developing practical and monolithic III-V photonic components on a silicon platform.

Above 400-K robust perpendicular ferromagnetic phase in a topological insulator

PubMed Central

Tang, Chi; Chang, Cui-Zu; Zhao, Gejian; Liu, Yawen; Jiang, Zilong; Liu, Chao-Xing; McCartney, Martha R.; Smith, David J.; Chen, Tingyong; Moodera, Jagadeesh S.; Shi, Jing

2017-01-01

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TIs) exhibits many fascinating physical properties for potential applications in nanoelectronics and spintronics. However, in transition metal–doped TIs, the only experimentally demonstrated QAHE system to date, the QAHE is lost at practically relevant temperatures. This constraint is imposed by the relatively low Curie temperature (Tc) and inherent spin disorder associated with the random magnetic dopants. We demonstrate drastically enhanced Tc by exchange coupling TIs to Tm3Fe5O12, a high-Tc magnetic insulator with perpendicular magnetic anisotropy. Signatures showing that the TI surface states acquire robust ferromagnetism are revealed by distinct squared anomalous Hall hysteresis loops at 400 K. Point-contact Andreev reflection spectroscopy confirms that the TI surface is spin-polarized. The greatly enhanced Tc, absence of spin disorder, and perpendicular anisotropy are all essential to the occurrence of the QAHE at high temperatures. PMID:28691097

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Temperature-dependent electron paramagnetic resonance detect oxygen vacancy defects and Cr valence of tetragonal Ba(Ti1-xCrx)O3 ceramics

NASA Astrophysics Data System (ADS)

Han, Dan-Dan; Lu, Da-Yong; Meng, Fan-Ling; Yu, Xin-Yu

2018-03-01

Temperature-dependent electron paramagnetic resonance (EPR) study was employed to detect oxygen vacancy defects in the tetragonal Ba(Ti1-xCrx)O3 (x = 5%) ceramic for the first time. In the rhombohedral phase below -150 °C, an EPR signal at g = 1.955 appeared in the insulating Ba(Ti1-xCrx)O3 (x = 5%) ceramic with an electrical resistivity of 108 Ω cm and was assigned to ionized oxygen vacancy defects. Ba(Ti1-xCrx)O3 ceramics exhibited a tetragonal structure except Ba(Ti1-xCrx)O3 (x = 10%) with a tetragonal-hexagonal mixed phase and a first-order phase transition dielectric behavior (ε‧m > 11,000). Mixed valence Cr ions could coexist in ceramics, form CrTi‧-VOrad rad or CrTirad-TiTi‧ defect complexes and make no contribution to a dielectric peak shift towards low temperature.

Toward nonlinear magnonics: Intensity-dependent spin-wave switching in insulating side-coupled magnetic stripes

NASA Astrophysics Data System (ADS)

Sadovnikov, A. V.; Odintsov, S. A.; Beginin, E. N.; Sheshukova, S. E.; Sharaevskii, Yu. P.; Nikitov, S. A.

2017-10-01

We demonstrate that the nonlinear spin-wave transport in two laterally parallel magnetic stripes exhibit the intensity-dependent power exchange between the adjacent spin-wave channels. By the means of Brillouin light scattering technique, we investigate collective nonlinear spin-wave dynamics in the presence of magnetodipolar coupling. The nonlinear intensity-dependent effect reveals itself in the spin-wave mode transformation and differential nonlinear spin-wave phase shift in each adjacent magnetic stripe. The proposed analytical theory, based on the coupled Ginzburg-Landau equations, predicts the geometry design involving the reduction of power requirement to the all-magnonic switching. A very good agreement between calculation and experiment was found. In addition, a micromagnetic and finite-element approach has been independently used to study the nonlinear behavior of spin waves in adjacent stripes and the nonlinear transformation of spatial profiles of spin-wave modes. Our results show that the proposed spin-wave coupling mechanism provides the basis for nonlinear magnonic circuits and opens the perspectives for all-magnonic computing architecture.

Comparative study of heterogeneous magnetic state above TC in La0.82Sr0.18CoO3 cobaltite and La0.83Sr0.17MnO3 manganite

NASA Astrophysics Data System (ADS)

Ryzhov, V. A.; Lazuta, A. V.; Molkanov, P. L.; Khavronin, V. P.; Kurbakov, A. I.; Runov, V. V.; Mukovskii, Ya. M.; Pestun, A. E.; Privezentsev, R. V.

2012-10-01

The magnetic, transport and structural properties are studied for La0.83Sr0.17MnO3 and La0.82Sr0.18CoO3 single crystals with nearly the same doping and the metallic ground state. Their comparisons have shown that ferromagnetic clusters originate in the paramagnetic matrix below Т*>TC in both samples and exhibit similar properties. This suggests the possible universality of such phenomena in doped mixed-valence oxides of transition metals with the perovskite-type structure. The cluster density increases on cooling and plays an important role on the physical properties of these systems. The differences in cluster evolutions and scenarios of their insulator-metal transitions are related to different magnetic behaviors of the matrixes in these crystals that is mainly due to distinct spin states of the Mn3+ and Co3+ ions.

Magnetism and anisotropy of Ir5+ based double perovskites Sr2CoIrO6andSr2FeIrO6

NASA Astrophysics Data System (ADS)

Terzic, Jasminka; Yuan, S. J.; Song, W. H.; Aswartham, S.; Cao, G.

2015-03-01

We report on structural, thermodynamic and transport study of single-crystal double perovskites Sr2CoIrO6andSr2FeIrO6.TheisostructuralSr2CoIrO6andSr2FeIrO6 feature a cubic crystal structure with pentavalent Ir5+(5d4) which are anticipated to have J =0 singlet ground states in the strong spin-orbit coupling limit. Here we observe magnetic coupling between 5d and 3d (Co, Fe) elements, which result in antiferromagnetic order at high temperatures in both double perovskites. Of the two, Sr2CoIrO6 displays antiferromagnetic metallic behavior with a pronounced magnetic anisotropy; in sharp contrast, the isostructural Sr2FeIrO6 exhibits an antiferroamagnetic, insulating ground state without discernible magnetic anisotropy. The data will be discussed and presented with comparisons drawn with similar systems. This work was supported by NSF via Grant DMR 1265162.

Bloch-Siegert shift in Dirac-Weyl fermionic systems

NASA Astrophysics Data System (ADS)

Kumar, Upendra; Kumar, Vipin; Enamullah, Setlur, Girish S.

2018-04-01

The Bloch-Siegert shift is a phenomenon in quantum optics, typically seen in two-level systems, when the driving field is sufficiently strong. The inclusion of frequency doubling effect (counter rotating term) in the conventional rotating wave approximation (RWA) changes the resonance condition thereby producing a rather small shift in the resonance condition, which is known as the Bloch-Siegert shift (BSS). Rabi oscillations in Dirac-Weyl fermionic systems exhibit anomalous behavior far from resonance, called anomalous Rabi oscillations. Therefore, in the present work, we study the phenomenon of the Bloch-Siegert shift in Weyl semimetal and topological insulator (TI) far from resonance, called anomalous Bloch-Siegert shift (ABSS). It is seen that the change in the resonance condition of anomalous Rabi oscillations is drastic in Weyl semimetal and TI. The ABSS in Weyl semimetals is highly anisotropic, whereas it is isotropic in TI. In case of TI, it is the Chern number which plays a crucial role to produce substantial change in the ABSS.

Vertical phase separation of 6,13-bis(triisopropylsilylethynyl) pentacene/poly(methyl methacrylate) blends prepared by electrostatic spray deposition for organic field-effect transistors

NASA Astrophysics Data System (ADS)

Onojima, Norio; Hara, Kazuhiro; Nakamura, Ayato

2017-05-01

Blend films composed of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) and poly(methyl methacrylate) (PMMA) were prepared by electrostatic spray deposition (ESD). ESD is considered as an intermediate process between dry and wet processes since the solvent present in small droplets can almost be evaporated before arriving at the substrate. Post-drying treatments with the time-consuming evaporation of residual solvents can be omitted. However, it is still not clear that a vertically phase-separated structure can be formed in the ESD process since the vertical phase separation of the blend films is associated with the solvent evaporation. In this study, we fabricated bottom-gate, top-contact organic field-effect transistors based on the blend films prepared by ESD and the devices exhibited transistor behavior with small hysteresis. This result demonstrates that the vertical phase separation of a blend film (upper TIPS pentacene active layer/bottom PMMA gate insulator) can occur in the facile one-step ESD process.

Electrical transport properties of small diameter single-walled carbon nanotubes aligned on ST-cut quartz substrates

PubMed Central

2014-01-01

A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the measured SWNTs are accurately defined from Raman spectroscopy and atomic force microscopy (AFM). A significant up-shift in the G-band of the resonance Raman spectra of the SWNTs is observed, which increases with increasing SWNTs diameter, and indicates a strong interaction with the quartz substrate. A semiconducting SWNT, with diameter 0.84 nm, shows Tomonaga-Luttinger liquid and Coulomb blockade behaviors at low temperatures. Another semiconducting SWNT, with a thinner diameter of 0.68 nm, exhibits a transition from the semiconducting state to an insulating state at low temperatures. These results elucidate some of the electrical properties of SWNTs in this unique configuration and help pave the way towards prospective device applications. PMID:25170326

Observation of symmetry-protected topological band with ultracold fermions

PubMed Central

Song, Bo; Zhang, Long; He, Chengdong; Poon, Ting Fung Jeffrey; Hajiyev, Elnur; Zhang, Shanchao; Liu, Xiong-Jun; Jo, Gyu-Boong

2018-01-01

Symmetry plays a fundamental role in understanding complex quantum matter, particularly in classifying topological quantum phases, which have attracted great interests in the recent decade. An outstanding example is the time-reversal invariant topological insulator, a symmetry-protected topological (SPT) phase in the symplectic class of the Altland-Zirnbauer classification. We report the observation for ultracold atoms of a noninteracting SPT band in a one-dimensional optical lattice and study quench dynamics between topologically distinct regimes. The observed SPT band can be protected by a magnetic group and a nonlocal chiral symmetry, with the band topology being measured via Bloch states at symmetric momenta. The topology also resides in far-from-equilibrium spin dynamics, which are predicted and observed in experiment to exhibit qualitatively distinct behaviors in quenching to trivial and nontrivial regimes, revealing two fundamental types of spin-relaxation dynamics related to bulk topology. This work opens the way to expanding the scope of SPT physics with ultracold atoms and studying nonequilibrium quantum dynamics in these exotic systems. PMID:29492457

Far-infrared and dc magnetotransport of CaMnO3-CaRuO3 superlattices

NASA Astrophysics Data System (ADS)

Yordanov, P.; Boris, A. V.; Freeland, J. W.; Kavich, J. J.; Chakhalian, J.; Lee, H. N.; Keimer, B.

2011-07-01

We report temperature- and magnetic-field-dependent measurements of the dc resistivity and the far-infrared reflectivity (FIR) (photon energies ℏω=50-700 cm-1) of superlattices comprising ten consecutive unit cells of the antiferromagnetic insulator CaMnO3, and four to ten unit cells of the correlated paramagnetic metal CaRuO3. Below the Néel temperature of CaMnO3, the dc resistivity exhibits a logarithmic divergence upon cooling, which is associated with a large negative, isotropic magnetoresistance. The ω→0 extrapolation of the resistivity extracted from the FIR reflectivity, on the other hand, shows a much weaker temperature and field dependence. We attribute this behavior to scattering of itinerant charge carriers in CaRuO3 from sparse, spatially isolated magnetic defects at the CaMnO3-CaRuO3 interfaces. This field-tunable “transport bottleneck” effect may prove useful for functional metal-oxide devices.

Ultrasensitive nonlinear absorption response of large-size topological insulator and application in low-threshold bulk pulsed lasers.

PubMed

Xu, Jin-Long; Sun, Yi-Jian; He, Jing-Liang; Wang, Yan; Zhu, Zhao-Jie; You, Zhen-Yu; Li, Jian-Fu; Chou, Mitch M C; Lee, Chao-Kuei; Tu, Chao-Yang

2015-10-07

Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi2Te3 exhibited a naturally ultrasensitive nonlinear absorption response to photoexcitation. The Bi2Te3 sheets with lateral size up to a few micrometers showed extremely low saturation absorption intensities of only 1.1 W/cm(2) at 1.0 and 1.3 μm, respectively. Benefiting from this sensitive response, a Q-switching pulsed laser was achieved in a 1.0 μm Nd:YVO4 laser where the threshold absorbed pump power was only 31 mW. This is the lowest threshold in Q-switched solid-state bulk lasers to the best of our knowledge. A pulse duration of 97 ns was observed with an average power of 26.1 mW. A Q-switched laser at 1.3 μm was also realized with a pulse duration as short as 93 ns. Moreover, the mode locking operation was demonstrated. These results strongly exhibit that Bi2Te3 is a promising optical device for constructing broadband, miniature and integrated high-energy pulsed laser systems with low power consumption. Our work clearly points out a significantly potential avenue for the development of two-dimensional-material-based broadband ultrasensitive photodetector and other optoelectronic devices.

Ultrasensitive nonlinear absorption response of large-size topological insulator and application in low-threshold bulk pulsed lasers

PubMed Central

Xu, Jin-Long; Sun, Yi-Jian; He, Jing-Liang; Wang, Yan; Zhu, Zhao-Jie; You, Zhen-Yu; Li, Jian-Fu; Chou, Mitch M. C.; Lee, Chao-Kuei; Tu, Chao-Yang

2015-01-01

Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi2Te3 exhibited a naturally ultrasensitive nonlinear absorption response to photoexcitation. The Bi2Te3 sheets with lateral size up to a few micrometers showed extremely low saturation absorption intensities of only 1.1 W/cm2 at 1.0 and 1.3 μm, respectively. Benefiting from this sensitive response, a Q-switching pulsed laser was achieved in a 1.0 μm Nd:YVO4 laser where the threshold absorbed pump power was only 31 mW. This is the lowest threshold in Q-switched solid-state bulk lasers to the best of our knowledge. A pulse duration of 97 ns was observed with an average power of 26.1 mW. A Q-switched laser at 1.3 μm was also realized with a pulse duration as short as 93 ns. Moreover, the mode locking operation was demonstrated. These results strongly exhibit that Bi2Te3 is a promising optical device for constructing broadband, miniature and integrated high-energy pulsed laser systems with low power consumption. Our work clearly points out a significantly potential avenue for the development of two-dimensional-material-based broadband ultrasensitive photodetector and other optoelectronic devices. PMID:26442909

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Grekhov, I. V.

The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO{sub 2}, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emittermore » transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.« less

Observation of fast expansion velocity with insulating tungsten wires on ∼80 kA facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, M.; Li, Y.; State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024

2016-07-15

This paper presents experimental results on the effects of insulating coatings on tungsten planar wire array Z-pinches on an 80 kA, 100 ns current facility. Expansion velocity is obviously increased from ∼0.25 km/s to ∼3.5 km/s by using the insulating coatings. It can be inferred that the wire cores are in gaseous state with this fast expansion velocity. An optical framing camera and laser probing images show that the standard wire arrays have typical ablation process which is similar to their behaviors on mega-ampere facilities. The ablation process and precursor plasma are suppressed for dielectric tungsten wires. The wire array implosion might be improvedmore » if these phenomena can be reproduced on Mega-ampere facilities.« less

Cherenkov sound on a surface of a topological insulator

NASA Astrophysics Data System (ADS)

Smirnov, Sergey

2013-11-01

Topological insulators are currently of considerable interest due to peculiar electronic properties originating from helical states on their surfaces. Here we demonstrate that the sound excited by helical particles on surfaces of topological insulators has several exotic properties fundamentally different from sound propagating in nonhelical or even isotropic helical systems. Specifically, the sound may have strictly forward propagation absent for isotropic helical states. Its dependence on the anisotropy of the realistic surface states is of distinguished behavior which may be used as an alternative experimental tool to measure the anisotropy strength. Fascinating from the fundamental point of view backward, or anomalous, Cherenkov sound is excited above the critical angle π/2 when the anisotropy exceeds a critical value. Strikingly, at strong anisotropy the sound localizes into a few forward and backward beams propagating along specific directions.

Cable Bundle Wire Derating

NASA Technical Reports Server (NTRS)

Lundquist, Ray A.; Leidecker, Henning

1999-01-01

The allowable operating currents of electrical wiring when used in the space vacuum environment is predominantly determined by the maximum operating temperature of the wire insulation. For Kapton insulated wire this value is 200 degree C. Guidelines provided in the Goddard Space Flight Center (GSFC) Preferred Parts List (PPL) limit the operating current of wire within vacuum to ensure the maximum insulation temperature is not exceeded. For 20 AWG wire, these operating parameters are: (1) 3.7 amps per wire (2) bundle of 15 or more wires (3) 70 C environment (4) vacuum of 10(exp -5) torr or less To determine the behavior and temperature of electrical wire at different operating conditions, a thermal vacuum test was performed on a representative electrical harness of the Hubble Space Telescope (HST) power distribution system. This paper describes the test and the results.

Cable Bundle Wire Derating

NASA Technical Reports Server (NTRS)

Lundquist, Ray A.; Leidecker, Henning

1998-01-01

The allowable operating currents of electrical wiring when used in the space vacuum environment is predominantly determined by the maximum operating temperature of the wire insulation. For Kapton insulated wire this value is 200 C. Guidelines provided in the Goddard Space Flight Center (GSFC) Preferred Parts List (PPL) limit the operating current of wire within vacuum to ensure the maximum insulation temperature is not exceeded. For 20 AWG wire, these operating parameters are: (1) 3.7 amps per wire; (2) bundle of 15 or more wires; (3) 70 C environment: and (4) vacuum of 10(exp -5) torr or less. To determine the behavior and temperature of electrical wire at different operating conditions, a thermal vacuum test was performed on a representative electrical harness of the Hubble Space Telescope (HST) power distribution system. This paper describes the test and the results.