Laser lift-off scribing of the CZTSe thin-film solar cells at different pulse durations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Markauskas, Edgaras; Gečys, Paulius; Repins, Ingrid

Here, the transition to fully sized solar modules requires additional three-step laser structuring processes to preserve small-scale cell efficiencies over the large areas. The adjacent cell isolation (the P3 scribe) was found to be the most sensitive process in the case of laser induced damage. The laser induced layer lift-off mechanism seems to be a very attractive process for the P3 patterning, since almost all the laser affected material is removed by mechanical spallation. However, a laser induced layer spallation behavior together with scribe electrical validation under the different laser pulse durations was not investigated extensively in the past. Therefore,more » we report our novel results on the P2 and P3 laser lift-off processing of the Cu 2ZnSn(S, Se 4) (CZTSe) thin-film solar cells covering the pulse duration range from 300 fs to 60 ps. Shorter sub-ps pulses enabled us to process smaller P2 and P3 craters, although the lift-off threshold fluences were higher compared to the longer ps pulses. In the case of the layer lift-off, the laser radiation had to penetrate through the layer stack down to the CZTSe/Mo interface. At shorter sub-ps pulses, the nonlinear effects triggered absorption of the laser radiation in the bulk of the material, resulting in increased damage of the CZTSe layer. The Raman measurements confirmed the CZTSe surface stoichiometry changes for shorter pulses. Furthermore, shorter pulses induced higher electrical conductivity of a scribe, resulting in lower photo-electrical efficiency during the mini-module simulation. In the case of the P3 lift-off scribing, the 10 ps pulses were more favorable than shorter femtosecond pulses.« less

Long range self-assembly of polythiophene breath figures: Optical and morphological characterization

DOE PAGES

Routh, Prahlad K.; Nykypanchuk, Dmytro; Venkatesh, T. A.; ...

2015-09-01

Large area, device relevant sized microporous thin films are formed with commercially available polythiophenes by the breath figure technique, a water-assisted micro patterning method, with such semitransparent thin films exhibiting periodicity and uniformity dictated by the length of the polymer side chain. Compared to drop casted thin films, the microporous thin films exhibit increased crystallinity due to stronger packing of the polymer inside the honeycomb frame.

Novel technique of making thin target foil of high density material via rolling method

NASA Astrophysics Data System (ADS)

Gupta, C. K.; Rohilla, Aman; Singh, R. P.; Singh, Gurjot; Chamoli, S. K.

2018-05-01

The conventional rolling method fails to yield good quality thin foils of thicknesses less than 2 mg/cm2 for high density materials with Z ≥ 70 (e.g. gold, lead). A special and improved technique has been developed to obtain such low thickness good quality gold foils by rolling method. Using this technique thin gold foils of thickness in the range of 0.850-2.5 mg/cm2 were obtained in the present work. By making use of alcohol during rolling, foils of thickness 1 mg/cm2 can be obtained in shorter time with less effort.

Microstructural and mechanical characteristics of Ni–Cr thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petley, Vijay; Sathishkumar, S.; Thulasi Raman, K.H.

2015-06-15

Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texturemore » in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.« less

High rectification in organic diodes based on liquid crystalline phthalocyanines.

PubMed

Apostol, Petru; Eccher, Juliana; Dotto, Marta Elisa Rosso; Costa, Cassiano Batesttin; Cazati, Thiago; Hillard, Elizabeth A; Bock, Harald; Bechtold, Ivan H

2015-12-28

The optical and electrical properties of mesogenic metal-free and metalated phthalocyanines (PCs) with a moderately sized and regioregular alkyl periphery were investigated. In solution, the individualized molecules show fluorescence lifetimes of 4-6 ns in THF. When deposited as solid thin films the materials exhibit significantly shorter fluorescence lifetimes with bi-exponential decay (1.4-1.8 ns; 0.2-0.4 ns) that testify to the formation of aggregates viaπ-π intermolecular interactions. In diode structures, their pronounced columnar order outbalances the unfavorable planar alignment and leads to excellent rectification behavior. Field-dependent charge carrier mobilities are obtained from the J-V curves in the trap-limited space-charge-limited current regime and demonstrate that the metalated PCs display an improved electrical response with respect to the metal-free homologue. The excited-state lifetime characterization suggest that the π-π intermolecular interactions are stronger for the metal-free PC, confirming that the metallic centre plays an important role in the charge transport inside these materials.

Structural, morphological and mechanical properties of niobium nitride thin films grown by ion and electron beams emanated from plasma

NASA Astrophysics Data System (ADS)

Siddiqui, Jamil; Hussain, Tousif; Ahmad, Riaz; Umar, Zeeshan A.; Abdus Samad, Ubair

2016-05-01

The influence of variation in plasma deposition parameters on the structural, morphological and mechanical characteristics of the niobium nitride films grown by plasma-emanated ion and electron beams are investigated. Crystallographic investigation made by X-ray diffractometer shows that the film synthesized at 10 cm axial distance with 15 plasma focus shots (PFS) exhibits better crystallinity when compared to the other deposition conditions. Morphological analysis made by scanning electron microscope reveals a definite granular pattern composed of homogeneously distributed nano-spheroids grown as clustered particles for the film synthesized at 10 cm axial distance for 15 PFS. Roughness analysis demonstrates higher rms roughness for the films synthesized at shorter axial distance and by greater number of PFS. Maximum niobium atomic percentage (35.8) and maximum average hardness (19.4 ± 0.4 GPa) characterized by energy-dispersive spectroscopy and nano-hardness analyzer respectively are observed for film synthesized at 10 cm axial distance with 15 PFS.

Capillary instability of periodic polymer structures: Influence of viscosity, substrate confinement and local curvature

NASA Astrophysics Data System (ADS)

Zhang, Zheng; Ding, Yifu

2015-03-01

NMR spectrum and spin-lattice relaxation time(T1) of CaF2 thin film samples deposited on a silicon cantilever tip were obtained by magnetic resonance force microscopy(MRFM). Thickness of the thin films were 50nm and 150nm. In order to measure T1, a cyclic adiabatic inversion method was used with periodic phase inversion. A comparison of the bulk and two thin films showed that T1 becomes shorter as the film thickness decreases. To make the comparison as accurate as possible, all three samples were loaded onto different beams of a multi-cantilever array and measured in the same experimental conditions such as temperature and magnetic field.

50-mJ, 1-kHz Yb:YAG thin-disk regenerative amplifier with 969-nm pulsed pumping

NASA Astrophysics Data System (ADS)

Chyla, Michal; Miura, Taisuke; Smrž, Martin; Severova, Patricie; Novak, Ondrej; Endo, Akira; Mocek, Tomas

2014-02-01

We are developing a 100-mJ Yb:YAG thin-disk regenerative amplifier operating at 1-kHz repetition rate pumped at zero-phonon-line (968.825-nm1) and delivering 1-2 ps pulses for EUV plasma sources applicable in science and industry. Recently we achieved the output energy of nearly 50-mJ from a single laser-head cavity with good beam quality (M2<1.2) as well as stable beam-pointing (<4μrad). Applying pulsed pumping with the pulse duration shorter than the upper state lifetime of Yb:YAG helps to reduce the ASE and thermal loading of the thin-disk.

Facile green synthesis of silver nanodendrite/cellulose acetate thin film electrodes for flexible supercapacitors.

PubMed

Devarayan, Kesavan; Park, Jiyoung; Kim, Hak-Yong; Kim, Byoung-Suhk

2017-05-01

In this study, we present a highly efficient and economical solution called as 'in situ hydrogenation' for preparation of highly conductive thin film electrode based on silver nanodendrites. The silver nanodendrite (AgND)/cellulose acetate (CA) thin film electrodes exhibited sheet resistance ranging from 0.32ohm/sq to 122.1ohm/sq which could be controlled by changing the concentration of both silver and polymer. In addition, these electrodes exhibited outstanding toughness during the bending test. Further, these thin film electrodes have great potential for scale-up with an average weight of 3mg/cm 2 and can be also combined with active nanomaterials such as multiwalled carbon nanotubes (MWCNTs) to fabricate AgND/CA/MWCNTs thin film for high-performance flexible supercapacitor electrode. The AgND/CA/MWCNTs electrodes exhibited a maximum specific capacitance of 237F/g at a current density of 0.3A/g. After 1000 cycles, the AgND/MWCNT/CA exhibited a decrease of 16.0% of specific capacitance. Copyright © 2017 Elsevier Ltd. All rights reserved.

High-Pressure-Induced Comminution and Recrystallization of CH3 NH3 PbBr3 Nanocrystals as Large Thin Nanoplates.

PubMed

Yin, Tingting; Fang, Yanan; Chong, Wee Kiang; Ming, Koh Teck; Jiang, Shaojie; Li, Xianglin; Kuo, Jer-Lai; Fang, Jiye; Sum, Tze Chien; White, Timothy J; Yan, Jiaxu; Shen, Ze Xiang

2018-01-01

High pressure (HP) can drive the direct sintering of nanoparticle assemblies for Ag/Au, CdSe/PbS nanocrystals (NCs). Instead of direct sintering for the conventional nanocrystals, this study experimentally observes for the first time high-pressure-induced comminution and recrystallization of organic-inorganic hybrid perovskite nanocrystals into highly luminescent nanoplates with a shorter carrier lifetime. Such novel pressure response is attributed to the unique structural nature of hybrid perovskites under high pressure: during the drastic cubic-orthorhombic structural transformation at ≈2 GPa, (301) the crystal plane fully occupied by organic molecules possesses a higher surface energy, triggering the comminution of nanocrystals into nanoslices along such crystal plane. Beyond bulk perovskites, in which pressure-induced modifications on crystal structures and functional properties will disappear after pressure release, the pressure-formed variants, i.e., large (≈100 nm) and thin (<10 nm) perovskite nanoplates, are retained and these exhibit simultaneous photoluminescence emission enhancing (a 15-fold enhancement in the photoluminescence) and carrier lifetime shortening (from ≈18.3 ± 0.8 to ≈7.6 ± 0.5 ns) after releasing of pressure from 11 GPa. This pressure-induced comminution of hybrid perovskite NCs and a subsequent amorphization-recrystallization treatment offer the possibilities of engineering the advanced hybrid perovskites with specific properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

PubMed Central

Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

2013-01-01

Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

Ecomorphology of the moray bite: relationship between dietary extremes and morphological diversity.

PubMed

Mehta, Rita S

2009-01-01

The pharyngeal jaws of moray eels function exclusively to transport prey from the oral jaws into the esophagus. This functional innovation in the moray pharyngeal jaw system occurred through the loss of some ancestral functions that presumably included prey processing. Therefore, the oral jaws of morays are used to capture and process prey. Dietary accounts suggest that morays can be categorized as either piscivorous or durophagous in feeding habits. These extreme feeding specializations that select for conflicting biomechanical demands on the oral jaws should result in two discrete clusters of cranial form and diet in morphospace. When functional characters underlying the oral jaws were examined for 10 muraenid species, piscivorous and durophagous morays occupied distinct areas of morphospace. Piscivores exhibited longer jaws, narrower heads, and long recurved teeth, while durophagous morays exhibited shorter jaws, greater dentary depths, and short blunt teeth. Durophagous morays process prey in their oral jaws, and their jaw-opening and jaw-closing ratios, along with their enlarged adductors, revealed jaws modified for force transmission. Pharyngeal jaw characters also separated moray species into different areas of morphospace. For example, Gymnomuraena zebra, a molluscivore, had more teeth on its pharyngobranchials than all other morays, and these teeth were long and thin compared with those of piscivores. The overall patterns of morphological variation corresponded well with moray dietary breadth. In addition, the range of jaw-opening and jaw-closing ratios revealed that for a clade of obligate carnivores, morays exhibit diverse biting behaviors.

Comparative study for highly Al and Mg doped ZnO thin films elaborated by sol gel method for photovoltaic application

NASA Astrophysics Data System (ADS)

El Hallani, G.; Nasih, S.; Fazouan, N.; Liba, A.; Khuili, M.; Sajieddine, M.; Mabrouki, M.; Laanab, L.; Atmani, E. H.

2017-04-01

Transparent conducting oxides such as ZnO doped with Al or Mg are commonly used in solar cells, light emitting diodes, photodetectors, and ultraviolet laser diodes. In our work, we focus on a comparative study of the structural, optical, and electrical properties of ZnO films highly doped with Al (AZO) and Mg (MZO). These films are deposited on glass substrates by the sol-gel spin coating method. The doping concentrations for Al and Mg are fixed to 5%-30%. The XRD spectra indicate that all the samples are polycrystalline with hexagonal wurtzite structures, exhibiting a preferred orientation along the (002) plane. Low degradation in crystallinity was observed for MZO even at a Mg concentration of 30%. The MgO phase started to appear compared to Al-doped layers where smaller grains are formed inducing a deterioration in the films just after doping but no new phase appeared. This result is in agreement with other experimental results [J. K. Rath, Sol. Energy Mater. Sol. Cells 76, 431-487 (2003); Morris et al., J. Appl. Phys. 67, 1079-1087 (1990)]. By AFM analysis, the results indicate a significantly rough surface for MZO compared to AZO films. For equal Al and Mg dopant concentrations, we observe that the transmittance spectra of MZO thin films are wider than those of AZO, indicating a shift toward shorter wavelengths with an optical gap energy equal to 3.67 eV. The electrical measurements of AZO and MZO thin films were made using the I-V characteristic obtained by the four probe method. All the films present an ohmic behavior. The conductivity and the mobility of AZO films were found to be better than those of MZO.

Experimental Observation of Thin-shell Instability in a Collisionless Plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, H.; Doria, D.; Sarri, G.

We report on the experimental observation of the instability of a plasma shell, which formed during the expansion of a laser-ablated plasma into a rarefied ambient medium. By means of a proton radiography technique, the evolution of the instability is temporally and spatially resolved on a timescale much shorter than the hydrodynamic one. The density of the thin shell exceeds that of the surrounding plasma, which lets electrons diffuse outward. An ambipolar electric field grows on both sides of the thin shell that is antiparallel to the density gradient. Ripples in the thin shell result in a spatially varying balancemore » between the thermal pressure force mediated by this field and the ram pressure force that is exerted on it by the inflowing plasma. This mismatch amplifies the ripples by the same mechanism that drives the hydrodynamic nonlinear thin-shell instability (NTSI). Our results thus constitute the first experimental verification that the NTSI can develop in colliding flows.« less

Experimental Observation of Thin-shell Instability in a Collisionless Plasma

NASA Astrophysics Data System (ADS)

Ahmed, H.; Doria, D.; Dieckmann, M. E.; Sarri, G.; Romagnani, L.; Bret, A.; Cerchez, M.; Giesecke, A. L.; Ianni, E.; Kar, S.; Notley, M.; Prasad, R.; Quinn, K.; Willi, O.; Borghesi, M.

2017-01-01

We report on the experimental observation of the instability of a plasma shell, which formed during the expansion of a laser-ablated plasma into a rarefied ambient medium. By means of a proton radiography technique, the evolution of the instability is temporally and spatially resolved on a timescale much shorter than the hydrodynamic one. The density of the thin shell exceeds that of the surrounding plasma, which lets electrons diffuse outward. An ambipolar electric field grows on both sides of the thin shell that is antiparallel to the density gradient. Ripples in the thin shell result in a spatially varying balance between the thermal pressure force mediated by this field and the ram pressure force that is exerted on it by the inflowing plasma. This mismatch amplifies the ripples by the same mechanism that drives the hydrodynamic nonlinear thin-shell instability (NTSI). Our results thus constitute the first experimental verification that the NTSI can develop in colliding flows.

Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times.

PubMed

Ahn, Chang Won; Amarsanaa, Gantsooj; Won, Sung Sik; Chae, Song A; Lee, Dae Su; Kim, Ill Won

2015-12-09

We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb(0.97)Y(0.02)[(Zr(0.6)Sn(0.4))(0.925)Ti(0.075)]O3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U(reco) = 21.0 J/cm(3) with a high energy-storage efficiency of η = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 °C and also exhibited strong charge-discharge fatigue endurance up to 1 × 10(7) cycles.

Electrochemical Corrosion Properties of Commercial Ultra-Thin Copper Foils

NASA Astrophysics Data System (ADS)

Yen, Ming-Hsuan; Liu, Jen-Hsiang; Song, Jenn-Ming; Lin, Shih-Ching

2017-08-01

Ultra-thin electrodeposited Cu foils have been developed for substrate thinning for mobile devices. Considering the corrosion by residual etchants from the lithography process for high-density circuit wiring, this study investigates the microstructural features of ultra-thin electrodeposited Cu foils with a thickness of 3 μm and their electrochemical corrosion performance in CuCl2-based etching solution. X-ray diffraction and electron backscatter diffraction analyses verify that ultra-thin Cu foils exhibit a random texture and equi-axed grains. Polarization curves show that ultra-thin foils exhibit a higher corrosion potential and a lower corrosion current density compared with conventional (220)-oriented foils with fan-like distributed fine-elongated columnar grains. Chronoamperometric results also suggest that ultra-thin foils possess superior corrosion resistance. The passive layer, mainly composed of CuCl and Cu2O, forms and dissolves in sequence during polarization.

The Influence of channel length to the characteristics of CuPc based OFET thin films

NASA Astrophysics Data System (ADS)

Sujarwata; Handayani, L.; Mosik; Fianti

2018-03-01

The main focus of this research is to characterize organic field effect transistor (OFET) thin films based on CuPc with a bottom-contact structure and varied channel length. OFET was prepared by Si substrate cleaning in the ultrasonic cleaner first, then deposition of the source and drain electrodes on the substrate with vacuum evaporation at room temperature, and finally CuPc thin film deposition among the source, drain, and gate electrodes. The distance between source anddrain electrodes is the channel length of the CuPc thin film. In this research, the channel length was varied; 100 μm, 200 μm and 300 μm, with the same active areas of 2.9-3.42 V and different current, IDS. The result showed that the shorter channel length causes, the bigger IDS flowing on the OFET

Regional Population Dynamics

Treesearch

Andrew Birt

2011-01-01

The population dynamics of the southern pine beetle (SPB) exhibit characteristic fluctuations between relatively long endemic and shorter outbreak periods. Populations exhibit complex and hierarchical spatial structure with beetles and larvae aggregating within individual trees, infestations with multiple infested trees, and regional outbreaks that comprise a large...

7 CFR 51.2849 - Damage.

Code of Federal Regulations, 2013 CFR

2013-01-01

... medium green color on one-third of the surface; (h) Sprouts when visible, or when concealed within the... proportionately shorter on smaller onions; (i) Peeling when more than one-half of the thin papery skin is missing... affected by an off-color, watersoaked condition. The off-color must be of some shade of brown or yellow; (l...

7 CFR 51.2849 - Damage.

Code of Federal Regulations, 2014 CFR

2014-01-01

... medium green color on one-third of the surface; (h) Sprouts when visible, or when concealed within the... proportionately shorter on smaller onions; (i) Peeling when more than one-half of the thin papery skin is missing... affected by an off-color, watersoaked condition. The off-color must be of some shade of brown or yellow; (l...

High-resolution laser spectroscopy of hot Cs and Rb vapor confined in a thin optical cell

NASA Astrophysics Data System (ADS)

Todorov, P.; Krasteva, A.; Vartanyan, T.; Todorov, G.; Sarkisyan, D.; Cartaleva, S.

2018-03-01

We propose a novel use of an optical cell of micrometer thickness filled with Cs vapor in view of studying the collisions between two different alkali atoms of strongly different densities. We demonstrate narrow and good-contrast sub-Doppler resonances at the Rb D2 line for a mean-free-path of the Cs atoms comparable to the optical cell longitudinal dimension; the resonances are completely destroyed when the mean-free-path of the Cs atoms is more than two orders of magnitude shorter than the longitudinal dimension of the thin cell.

Viscoelastic Thin Polymer Films under Transient Residual Stresses: Two-Stage Dewetting on Soft Substrates

NASA Astrophysics Data System (ADS)

Al Akhrass, S.; Reiter, G.; Hou, S. Y.; Yang, M. H.; Chang, Y. L.; Chang, F. C.; Wang, C. F.; Yang, A. C.-M.

2008-05-01

A nonmonotonic, two-stage dewetting behavior was observed for spin coated thin viscoelastic polymer films on soft elastic substrates. At times shorter than the relaxation time of the polymer (t<τrep), dewetting generated deep trenches in the soft rubbery substrate which, in turn, almost stopped dewetting. At later stages (t≫τrep), dewetting accelerated, accompanied by an unstable rim. However, holes nucleated at t<τrep showed only this second-stage behavior. Our observations are attributed to large elastic deformations in the substrate caused by transient residual stresses within the film.

Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing.

PubMed

Liang, Yuan-Chang; Lung, Tsai-Wen; Wang, Chein-Chung

2016-12-01

Well-crystallized Sn 2 S 3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn 2 S 3 thin films exhibited a sheet-like feature. The Sn 2 S 3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing the as-synthesized Sn 2 S 3 thin films further in ambient air at 400 °C engendered roughened and oxidized surfaces on the Sn 2 S 3 thin films. Transmission electron microscopy analysis revealed that the surfaces of the Sn 2 S 3 thin films transformed into a SnO 2 phase, and well-layered Sn 2 S 3 -SnO 2 heterostructure thin films were thus formed. The Sn 2 S 3 -SnO 2 heterostructure thin film exhibited a visible photoassisted room-temperature gas-sensing behavior toward low concentrations of NO 2 gases (0.2-2.5 ppm). By contrast, the pure Sn 2 S 3 thin film exhibited an unapparent room-temperature NO 2 gas-sensing behavior under illumination. The suitable band alignment at the interface of the Sn 2 S 3 -SnO 2 heterostructure thin film and rough surface features might explain the visible photoassisted room-temperature NO 2 gas-sensing responses of the heterostructure thin film on exposure to NO 2 gas at low concentrations in this work.

GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation.

PubMed

Gondal, Mohammed A; Chang, Xiao F; Yamani, Zain H; Yang, Guo F; Ji, Guang B

2011-01-01

Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.

Enzyme-functionalized thin-cladding long-period fiber grating in transition mode at dispersion turning point for sugar-level and glucose detection

NASA Astrophysics Data System (ADS)

Badmos, Abdulyezir A.; Sun, Qizhen; Sun, Zhongyuan; Zhang, Junxi; Yan, Zhijun; Lutsyk, Petro; Rozhin, Alex; Zhang, Lin

2017-02-01

Enzyme-functionalized dual-peak long-period fiber grating (LPFG) inscribed in 80-μm-cladding B/Ge codoped single-mode fiber is presented for sugar-level and specific glucose detection. Before enzyme functionalization, the dual-peak LPFG was employed for refractive index sensing and sugar-level detection and high sensitivities of ˜4298.20 nm/RIU and 4.6696 nm/% were obtained, respectively. Glucose detection probe was attained by surface functionalization of the dual-peak LPFG via covalent binding with aminopropyl triethoxysilane used as a binding site. Optical micrographs confirmed the presence of enzyme. The surface-functionalized dual-peak LPFG was tested with D-(+)-glucose solution of different concentrations. While the peak 2 at the longer wavelength was suitable only to measure lower glucose concentration (0.1 to 1.6 mg/ml) recording a high sensitivity of 12.21±0.19 nm/(mg/ml), the peak 1 at the shorter wavelength was able to measure a wider range of glucose concentrations (0.1 to 3.2 mg/ml) exhibiting a maximum resonance wavelength shift of 7.12±0.12 nm/mg/ml. The enzyme-functionalized dual-peak LPFG has the advantage of direct inscription of highly sensitive grating structures in thin-cladding fibre without etching, and most significantly, its sensitivity improvement of approximately one order of magnitude higher than previously reported LPFG and excessively tilted fibre grating (Ex-TFG) for glucose detection.

Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells

NASA Astrophysics Data System (ADS)

Qian, Chong-Xin; Deng, Zun-Yi; Yang, Kang; Feng, Jiangshan; Wang, Ming-Zi; Yang, Zhou; Liu, Shengzhong Frank; Feng, Hong-Jian

2018-02-01

Interface engineering has become a vital method in accelerating the development of perovskite solar cells in the past few years. To investigate the effect of different contacted surfaces of a light absorber with an electron transporting layer, TiO2, we synthesize CsPbBr3/TiO2 thin films with two different interfaces (CsBr/TiO2 and PbBr2/TiO2). Both interfacial heterostructures exhibit enhanced visible light absorption, and the CsBr/TiO2 thin film presents higher absorption than the PbBr2/TiO2 interface, which is attributed to the formation of interface states and the decreased interface bandgap. Furthermore, compared with the PbBr2/TiO2 interface, CsBr/TiO2 solar devices present larger output short circuit current and shorter photoluminescence decay time, which indicates that the CsBr contacting layer with TiO2 can better extract and separate the photo-induced carriers. The first-principles calculations confirm that, due to the existence of staggered gap (type II) offset junction and the interface states, the CsBr/TiO2 interface can more effectively separate the photo-induced carriers and thus drive the electron transfer from the CsPbBr3 perovskite layer to the TiO2 layer. These results may be beneficial to exploit the potential application of all-inorganic perovskite CsPbBr3-based solar cells through the interface engineering route.

SHI irradiation effect on pure and Mn doped ZnO thin films

NASA Astrophysics Data System (ADS)

Khawal, H. A.; Raskar, N. D.; Dole, B. N.

2017-05-01

Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

Fabrication of Nanosized Island-Like CdO Crystallites-Decorated TiO₂ Rod Nanocomposites via a Combinational Methodology and Their Low-Concentration NO₂ Gas-Sensing Behavior.

PubMed

Liang, Yuan-Chang; Xu, Nian-Cih; Wang, Chein-Chung; Wei, Da-Hua

2017-07-10

TiO₂-CdO composite rods were synthesized through a hydrothermal method and sputtering thin-film deposition. The hydrothermally derived TiO₂ rods exhibited a rectangular cross-sectional crystal feature with a smooth surface, and the as-synthesized CdO thin film exhibited a rounded granular surface feature. Structural analyses revealed that the CdO thin film sputtered onto the surfaces of the TiO₂ rods formed a discontinuous shell layer comprising many island-like CdO crystallites. The TiO₂-CdO composite rods were highly crystalline, and their surfaces were rugged. A comparison of the NO₂ gas-sensing properties of the CdO thin film, TiO₂ rods, and TiO₂-CdO composite rods revealed that the composite rods exhibited superior gas-sensing responses to NO₂ gas than did the CdO thin film and TiO 2 rods, which can be attributed to the microstructural differences and the formation of heterojunctions between the TiO₂ core and CdO crystallites.

Ternary blend polymer solar cells with self-assembled structure for enhancing power conversion efficiency

NASA Astrophysics Data System (ADS)

Yang, Zhenhua; Li, Hongfei; Nam, Chang-Yong; Kisslinger, Kim; Satija, Sushil; Rafailovich, Miriam

Bulk heterojunction (BHJ) polymer solar cells are an area of intense interest due to their advantages such as mechanical flexibility. The active layer is typically spin coated from the solution of polythiophene derivatives (donor) and fullerenes (acceptor) and interconnected domains are formed because of phase separation. However, the power conversion efficiency (PCE) of BHJ solar cell is restricted by the disordered inner structures in the active layer, donor or acceptor domains isolated from electrodes. Here we report a self-assembled columnar structure formed by phase separation between (PCDTBT) and polystyrene (PS) for the active layer morphology optimization. The BHJ solar cell device based on this structure is promising for exhibiting higher performance due to the shorter carrier transportation pathway and larger interfacial area between donor and acceptor. The surface morphology is investigated with atomic force microscopy (AFM) and the columnar structure is studied by investigation of cross-section of the blend thin film of PCDTBT and PS under the transmission electron microscopy (TEM). The different morphological structures formed via phase segregation are correlated with the performance of the BHJ solar cells.

Trojan particles: Large porous carriers of nanoparticles for drug delivery

PubMed Central

Tsapis, N.; Bennett, D.; Jackson, B.; Weitz, D. A.; Edwards, D. A.

2002-01-01

We have combined the drug release and delivery potential of nanoparticle (NP) systems with the ease of flow, processing, and aerosolization potential of large porous particle (LPP) systems by spray drying solutions of polymeric and nonpolymeric NPs into extremely thin-walled macroscale structures. These hybrid LPPs exhibit much better flow and aerosolization properties than the NPs; yet, unlike the LPPs, which dissolve in physiological conditions to produce molecular constituents, the hybrid LPPs dissolve to produce NPs, with the drug release and delivery advantages associated with NP delivery systems. Formation of the large porous NP (LPNP) aggregates occurs via a spray-drying process that ensures the drying time of the sprayed droplet is sufficiently shorter than the characteristic time for redistribution of NPs by diffusion within the drying droplet, implying a local Peclet number much greater than unity. Additional control over LPNPs physical characteristics is achieved by adding other components to the spray-dried solutions, including sugars, lipids, polymers, and proteins. The ability to produce LPNPs appears to be largely independent of molecular component type as well as the size or chemical nature of the NPs. PMID:12200546

Electric bistability induced by incorporating self-assembled monolayers/aggregated clusters of azobenzene derivatives in pentacene-based thin-film transistors.

PubMed

Tseng, Chiao-Wei; Huang, Ding-Chi; Tao, Yu-Tai

2012-10-24

Composite films of pentacene and a series of azobenzene derivatives are prepared and used as the active channel material in top-contact, bottom-gate field-effect transistors. The transistors exhibit high field-effect mobility as well as large I-V hysteresis as a function of the gate bias history. The azobenzene moieties, incorporated either in the form of self-assembled monolayer or discrete multilayer clusters at the dielectric surface, result in electric bistability of the pentacene-based transistor either by photoexcitation or gate biasing. The direction of threshold voltage shifts, size of hysteresis, response time, and retention characteristics all strongly depend on the substituent on the benzene ring. The results show that introducing a monolayer of azobenzene moieties results in formation of charge carrier traps responsible for slower switching between the bistable states and longer retention time. With clusters of azobenzene moieties as the trap sites, the switching is faster but the retention is shorter. Detailed film structure analyses and correlation with the transistor/memory properties of these devices are provided.

Elevated Carbon Dioxide in the Atmosphere: What Might It Mean for Loblolly Pine Plantation Forestry

Treesearch

John W. Groninger; Kurt H. Johnsen; John. R. Seiler; Rodney E. Will; David S. Ellsworth; Chris A. Maier

1999-01-01

Research with loblolly pine suggests that projected increases in atmospheric CO2 concentration will accelerate early growth and could result in shorter rotation length, reduced time until first commercial thinning, higher optimal planting density, and possibly higher maximum stocking level in managed stands. We discuss some of the physiological...

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Strategies to improve the electrochemical performance of electrodes for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Yang, Ming-Che

Lithium-ion batteries are widely used in consumer market because of their lightweight and rechargeable property. However, for the application as power sources of hybrid electric vehicles (HEVs), which need excellent cycling performance, high energy density, high power density, capacity, and low cost, new materials still need to be developed to meet the demands. In this dissertation work, three different strategies were developed to improve the properties of the electrode of lithium batteries. First, the voltage profile and lithium diffusion battier of LiM1/2Mn 3/2O4 (M=Ti, V, Cr, Fe, Co, Ni and Cu) were predicted by first principles theory. The computation results suggest that doping with Co or Cu can potentially lower Li diffusion barrier compared with Ni doping. Our experimental research has focused on LiNixCuyMn 2-x-yO4 (0

Initial shock and long-term stand development following thinning in a Douglas-fir plantation.

Treesearch

Constance A. Harrington; Donald L. Reukema

1983-01-01

Responses following the application of six precommercial thinning treatments to a 27-year-old Douglas-fir plantation (2.4-m spacing, height at age 100 = 24 m) have been monitored for 25 years. Spacing after thinning ranged from 3.4 m to 8.1 m. Immediately following thinning, trees exhibited thinning shock; that is, substantial height growth reductions. The severity and...

Fast IR laser mapping ellipsometry for the study of functional organic thin films.

PubMed

Furchner, Andreas; Sun, Guoguang; Ketelsen, Helge; Rappich, Jörg; Hinrichs, Karsten

2015-03-21

Fast infrared mapping with sub-millimeter lateral resolution as well as time-resolved infrared studies of kinetic processes of functional organic thin films require a new generation of infrared ellipsometers. We present a novel laboratory-based infrared (IR) laser mapping ellipsometer, in which a laser is coupled to a variable-angle rotating analyzer ellipsometer. Compared to conventional Fourier-transform infrared (FT-IR) ellipsometers, the IR laser ellipsometer provides ten- to hundredfold shorter measurement times down to 80 ms per measured spot, as well as about tenfold increased lateral resolution of 120 μm, thus enabling mapping of small sample areas with thin-film sensitivity. The ellipsometer, equipped with a HeNe laser emitting at about 2949 cm(-1), was applied for the optical characterization of inhomogeneous poly(3-hexylthiophene) [P3HT] and poly(N-isopropylacrylamide) [PNIPAAm] organic thin films used for opto-electronics and bioapplications. With the constant development of tunable IR laser sources, laser-based infrared ellipsometry is a promising technique for fast in-depth mapping characterization of thin films and blends.

Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers

NASA Astrophysics Data System (ADS)

Wu, C. H.; Zory, P. S.; Emanuel, M. A.

1994-12-01

Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated. Due to reduced contact reflectivity, the Ni contact lasers have significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 nm are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths. The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory.

Influence of deposition conditions on the nature of epitaxial SrIrO3 on STO (001)

NASA Astrophysics Data System (ADS)

Bhat, Shwetha G.; Sebastian, Nirmal K.; Kumar, P. S. Anil

2018-05-01

SrIrO3 (SIO) is one of the materials known to exhibit a high spin-orbit coupling with correlated semi-metallic ground state, along with the topological states, as proven in recent times. In this regard, the SIO thin films grown by us on SrTiO3 (001) at certain deposition conditions, exhibit a low temperature magneto-transport behavior which is analogous to the materials with topological states. Further, we have explored various deposition conditions of SIO such as partial pressure of O2 and different temperatures of growth for different thickness of SIO. In addition, from the electrical transport properties, SIO thin films found to exhibit semi-metallic nature with either insulating-like or a crossover from metal-like to insulating-like behavior based on the conditions chosen for the growth. Moreover, the magneto-transport data of various SIO thin films are found to be obeying the usual B2 (Lorentzian) behavior in majority of the cases. At the same time, we have also observed the weak-localization and weak-antilocalization effects; along with a linear magneto-resistance at low temperature ranges. Thus, from our extensive measurements, it becomes clear that SIO thin films can exhibit wide varieties of magneto-transport properties based on the deposition conditions. Plethora of interesting properties exhibited by the highly spin-orbit coupled SIO epitaxial thin films at lower temperatures in the presence of magnetic field makes the material to be promising for the future applications in the field of spintronics.

Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

NASA Astrophysics Data System (ADS)

You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

2018-02-01

In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp; Yamaguchi, Akihiro; Sakuda, Atsushi

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueousmore » solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.« less

Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

PubMed

Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

2016-05-04

Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Hsien; Chou, Wu-Ching, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw; Chang, Ting-Chang, E-mail: tcchang3708@gmail.com, E-mail: wuchingchou@mail.nctu.edu.tw

2014-10-21

This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of themore » surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast I{sub D}-V{sub G} and modulated peak/base pulse time I{sub D}-V{sub D} measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.« less

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Structural and optoelectronic studies on Ag-CdS quantum dots

NASA Astrophysics Data System (ADS)

Ibrahim Mohammed S., M.; Gubari, Ghamdan M. M.; Huse, Nanasaheb P.; Dive, Avinash S.; Sharma, Ramphal

2018-05-01

In the present study, we have successfully deposited CdS quantum dot thin films and Ag doped CdS on a glass slide by simple and economical chemical bath deposition at room temperature. The X-ray diffraction method analysis reveals that CdS thin films exhibit hexagonal structure when compared with standard JCPDS data. The estimated average crystallite size of the quantum dots and resulted in the least crystallite size of ˜9 nm. a comparison between the optical and electrical properties of the films before and after doping Ag was made through measuring and analyzing the curves for UV and I-V. From UV absorption spectra we observed that the samples exhibited a band edge near ˜400 nm with a slight deviation with the presence of excitonic peak for both CdS and Ag doped CdS. The presence of excitonic peak may be referred to the formation of quantum dots. The calculated band gap energy of thin films was found to be 3.45 eV and 3.15 eV for both CdS and Ag doped CdS thin films respectively, where the optical absorption spectra of Ag doped CdS nanoparticles also exhibit shift with respect to that of CdS quantum dots thin films. The photosensitive of CdS thin films show an increase in photocurrent when Ag doped CdS.

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

DTIC Science & Technology

2012-02-07

circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The asobtained thin-film transistors ( TFTs ) exhibit... flexible substrates for digital, analog and radio frequency applications. The as- obtained thin-film transistors ( TFTs ) exhibit highly uniform device...LCD) and organic light- emitting diode ( OLED ) displays lack the transparency and flexibility and are thus unsuitable for flexible electronic

Polyurethane Ionophore-Based Thin Layer Membranes for Voltammetric Ion Activity Sensing.

PubMed

Cuartero, Maria; Crespo, Gaston A; Bakker, Eric

2016-06-07

We report on a plasticized polyurethane ionophore-based thin film material (of hundreds of nanometer thickness) for simultaneous voltammetric multianalyte ion activity detection triggered by the oxidation/reduction of an underlying poly(3-octylthiophene) film. This material provides excellent mechanical, physical, and chemical robustness compared to other polymers. Polyurethane films did not exhibit leaching of lipophilic additives after rinsing with a direct water jet and exhibited resistance to detachment from the underlying electrode surface, resulting in a voltammetric current response with less than <1.5% RSD variation (n = 50). In contrast, plasticized poly(vinyl chloride), polystyrene, and poly(acrylate) ionophore-based membranes of the same thickness and composition exhibited a significant deterioration of the signal after identical treatment. While previously reported works emphasized fundamental advancement of multi-ion detection with multi-ionophore-based thin films, polyurethane thin membranes allow one to achieve real world measurements without sacrificing analytical performance. Indeed, polyurethane membranes are demonstrated to be useful for the simultaneous determination of potassium and lithium in undiluted human serum and blood with attractive precision.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

PubMed

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

2006-08-01

Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

DOEpatents

Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

2015-04-21

Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

Electrochromic materials, devices and process of making

DOEpatents

Richardson, Thomas J.

2003-11-11

Thin films of transition metal compositions formed with magnesium that are metals, alloys, hydrides or mixtures of alloys, metals and/or hydrides exhibit reversible color changes on application of electric current or hydrogen. Thin films of these materials are suitable for optical switching elements, thin film displays, sun roofs, rear-view mirrors and architectural glass.

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Thin-Film Power Transformers

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

NASA Astrophysics Data System (ADS)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

The relationship between selected socioeconomic factors and thinness among Polish school-aged children and adolescents.

PubMed

Gurzkowska, Beata; Kułaga, Zbigniew; Grajda, Aneta; Góźdź, Magdalena; Wojtyło, Małgorzata; Litwin, Mieczysław

2017-06-01

The analysis was performed on a database including 17,427 records of subjects aged 7-18 years, randomly sampled from a population of Polish students. Thinness was determined using international cut-off points, defined to pass through body mass index of 18.5 kg/m 2 at the age of 18. The weighted prevalence of thinness and odds ratios with 95% confidence interval were estimated for gender, birth weight, level of schooling and school location, gross domestic product (GDP) per inhabitant, family income and maternal education. Body height was analysed according to body mass and birth weight categories. The prevalence of thinness was higher among children with low birth weight and among girls. The prevalence of thinness decreased with increasing GDP per inhabitant. In analysis by level of schooling: primary-middle-secondary, prevalence of thinness decreased among boys and increased among girls. Thin students were significantly shorter than other students, and thin girls less likely participated in physical education. Gender and socioeconomic factors are important determinants of thinness among Polish children and adolescents. Public health strategies should address family eating practices to prevent negative effects of weight deficit, especially among girls/children from low GDP regions. What is Known: • Socioeconomic factors and gender influence weight status of children and adolescents. What is New: • The first time the prevalence and determinants of thinness based on data from a nationally representative, weighted sample of Polish children aged 7-18 years were presented. • The analysis shows how gender and socioeconomics determinants influence the prevalence of thinness among children and adolescent in post-transformation country and can be used to international comparisons.

Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films.

PubMed

Emori, Satoru; Yi, Di; Crossley, Sam; Wisser, Jacob J; Balakrishnan, Purnima P; Khodadadi, Behrouz; Shafer, Padraic; Klewe, Christoph; N'Diaye, Alpha T; Urwin, Brittany T; Mahalingam, Krishnamurthy; Howe, Brandon M; Hwang, Harold Y; Arenholz, Elke; Suzuki, Yuri

2018-06-08

Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe 3+ ions with zero orbital angular momentum. These epitaxial MAFO thin films exhibit a Gilbert damping parameter of ∼0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ∼0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

NASA Astrophysics Data System (ADS)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-10-01

In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

Smart chemical sensors using ZnO semiconducting thin films for freshness detection of foods and beverages

NASA Astrophysics Data System (ADS)

Nanto, Hidehito; Kobayashi, Toshiki; Dougami, Naganori; Habara, Masaaki; Yamamoto, Hajime; Kusano, Eiji; Kinbara, Akira; Douguchi, Yoshiteru

1998-07-01

The sensitivity of the chemical sensor, based on the resistance change of Al2O3-doped and SnO2-doped ZnO (ZnO:Al and ZnO:SnO2) thin film, is studied for exposure to various gases. It is found that the ZnO:Al and ZnO:Sn thin film chemical sensor has a high sensitivity and excellent selectivity for amine (TMA and DMA) gas and ethanol gas, respectively. The ZnO:Al (5.0 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to odors from rotten sea foods, such as salmon, sea bream, oyster, squid and sardine, responds to the freshness change of these sea foods. The ZnO:SnO2 (78 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to aroma from alcohols, such as wine, Japanese sake, and whisky, responds to the freshness change of these alcohols.

Photoluminescence characterisations of a dynamic aging process of organic-inorganic CH3NH3PbBr3 perovskite

NASA Astrophysics Data System (ADS)

Sheng, R.; Wen, X.; Huang, S.; Hao, X.; Chen, S.; Jiang, Y.; Deng, X.; Green, M. A.; Ho-Baillie, A. W. Y.

2016-01-01

After unprecedented development of organic-inorganic lead halide perovskite solar cells over the past few years, one of the biggest barriers towards their commercialization is the stability of the perovskite material. It is thus important to understand the interaction between the perovskite material and oxygen and/or humidity and the associated degradation process in order to improve device and encapsulation design for better durability. Here we characterize the dynamic aging process in vapour-assisted deposited (VASP) CH3NH3PbBr3 perovskite thin films using advanced optical techniques, such as time-resolved photoluminescence and fluorescence lifetime imaging microscopy (FLIM). Our investigation reveals that the perovskite grains grow spontaneously and the larger grains are formed at room temperature in the presence of moisture and oxygen. This crystallization process leads to a higher density of defects and a shorter carrier lifetime, specifically in the larger grains. Excitation-intensity-dependent steady-state photoluminescence shows both N2 stored and aged perovskite exhibit a super-linear increase of photoluminescence intensity with increasing excitation intensity; and the larger slope in aged sample suggests a larger density of defects is generated, consistent with time-resolved PL measurements.

In-line open-cavity Fabry-Pérot interferometer formed by C-shaped fiber fortemperature-insensitive refractive index sensing.

PubMed

Wu, Chuang; Liu, Zhengyong; Zhang, A Ping; Guan, Bai-Ou; Tam, Hwa-Yaw

2014-09-08

We report an open-cavity optical fiber Fabry-Pérot interferometer (FPI) capable of measuring refractive index with very low temperature cross-sensitivity. The FPI was constructed by splicing a thin piece of C-shaped fiber between two standard single-mode fibers. The refractive index (RI) response of the FPI was characterized using water-ethanol mixtures with RI in the range of 1.33 to 1.36. The RI sensitivity was measured to be 1368 nm/RIU at the wavelength of 1600 nm with good linearity. Thanks to its all-glass structure, the FPI exhibits very low temperature cross-sensitivity of 3.04 × 10⁻⁷ RIU/°C. The effects of cavity length on the performance of the sensor were also studied. A shorter cavity gives rise to broader measurement range while offering larger detection limit, and vice versa. What's more, the effect of material dispersion of analyte on the sensitivity of open-cavity FPIs was identified for the first time. The sensor is compact in size and easy to fabricate. It is potentially useful for label-free optical sensing of chemical and biological samples.

Advantages offered by high average power picosecond lasers

NASA Astrophysics Data System (ADS)

Moorhouse, C.

2011-03-01

As electronic devices shrink in size to reduce material costs, device size and weight, thinner material thicknesses are also utilized. Feature sizes are also decreasing, which is pushing manufacturers towards single step laser direct write process as an attractive alternative to conventional, multiple step photolithography processes by eliminating process steps and the cost of chemicals. The fragile nature of these thin materials makes them difficult to machine either mechanically or with conventional nanosecond pulsewidth, Diode Pumped Solids State (DPSS) lasers. Picosecond laser pulses can cut materials with reduced damage regions and selectively remove thin films due to the reduced thermal effects of the shorter pulsewidth. Also, the high repetition rate allows high speed processing for industrial applications. Selective removal of thin films for OLED patterning, silicon solar cells and flat panel displays is discussed, as well as laser cutting of transparent materials with low melting point such as Polyethylene Terephthalate (PET). For many of these thin film applications, where low pulse energy and high repetition rate are required, throughput can be increased by the use of a novel technique to using multiple beams from a single laser source is outlined.

Impact of initial spacing on yield per acre and wood quality of unthinned loblolly pine at age 21

Treesearch

Alexander, III Clark; Richard F. Daniels; Lewis Jordan; Laurie Schimleck

2010-01-01

The market for southern pine first thinnings is soft. Thus, forest managers are planting at wider spacings, and using weed control and fertilization to grow chipping-saw and sawtimber trees in shorter rotations. A 21-year-old unthinned spacing study was sampled to determine the effect of initial spacing on wood quality and yield per acre of planted loblolly pine (

The usefulness of changing focus during examination using Gram staining as initial diagnostic clue for infective tuberculosis.

PubMed

Atsukawa, Yoshiko; Kawakami, Sayoko; Asahara, Miwa; Ishigaki, Shinobu; Tanaka, Takashi; Ono, Yasuo; Nishiya, Hajime; Fujisaki, Ryuichi; Koga, Ichiro; Ota, Yasuo; Miyazawa, Yukihisa

2011-08-01

Gram staining is a useful technique for detecting bacteria but is highly questionable in detecting Mycobacterium tuberculosis. Its detection generally requires special staining, such as Ziehl-Neelsen staining. We experienced three cases in which tuberculosis was first suggested by Gram staining of sputum or pus, confirmed by Ziehl-Neelsen staining, and diagnosed by polymerase chain reaction or culture. To find colorless tubercle bacilli in clinical samples with various organisms, varying the focus to slightly longer and shorter during study of the slides is indispensable. We present criteria for detecting infective pulmonary tuberculosis in Gram staining. First, in the ordinary focus, weakly stained, thin, gram-positive bacilli are found; second, with a slightly longer focus distance, the thin, cord-like, conspicuous gram-positive bacilli can be observed; and third, with a shorter focus distance, the gram-positive bacilli have changed into the brightened, colorless, or ghost ones. Four laboratory technologists each evaluated 20 Gram-stained samples after being lectured on the criteria, with no prior information about the sample. They accurately evaluated the presence of the bacilli in Gram-stained preparations in more than 90% of samples containing 3+ bacilli on Ziehl-Neelsen staining. Gram staining is available as an easy and rapid initial clue to recognize highly infective tuberculosis.

Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties

NASA Astrophysics Data System (ADS)

Agati, M.; Amiard, G.; Le Borgne, V.; Castrucci, P.; Dolbec, R.; de Crescenzi, M.; El Khakani, M. A.; Boninelli, S.

2016-11-01

Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled plasma (ICP) based process. Two families of SiNWs have been identified, namely long SiNWs (up to 2-3 micron in length) and shorter ones (~100 nm). SiNWs were found to consist of a Si core (with diameter as thin as 2 nm) and a silica shell, of which the thickness varies from 5 to 20 nm. By combining advanced transmission electron microscopy (TEM) techniques, we demonstrate that the growth of the long SiNWs occurred via the Oxide Assisted Growth (OAG) mechanism, while the Vapor Liquid Solid (VLS) mechanism is responsible for the growth of shorter ones. Energy filtered TEM analyses revealed, in some cases, the existence of chapelet-like Si nanocrystals embedded in an otherwise silica nanowire. Such nanostructures are believed to result from the exposure of some OAG SiNWs to high temperatures prevailing inside the reactor. Finally, the intense photoluminescence (PL) of these ICP-grown SiNWs in the 620-950 nm spectral range is a clear indication of the occurrence of quantum confinement. Such a PL emission is in accordance with the TEM results which revealed that the size of nanostructures are indeed below the exciton Bohr radius of silicon.

Stress assisted selective ablation of ITO thin film by picosecond laser

NASA Astrophysics Data System (ADS)

Farid, Nazar; Chan, Helios; Milne, David; Brunton, Adam; M. O'Connor, Gerard

2018-01-01

Fast selective pattering with high precession on 175 nm ITO thin film with IR ps lasers is investigated. Ablation parameters are optimized with detailed studies on the scribed depth, topography, and particle generation using AFM and SEM. A comparison of 10 and 150 ps laser revealed that the shorter pulse (10 ps) laser is more appropriate in selective and partial ablation; up to 20 nm resolution for controlled depth with multipulses having energy below the damage threshold is demonstrated. The experimental results are interpreted to involve stress assisted ablation mechanism for the 10 ps laser while thermal ablation along with intense melting occurs for 150 ps laser. The transition between these regimes is estimated to occur at approximately 30 ps.

Junctionless Thin-Film Transistors Gated by an H₃PO₄-Incorporated Chitosan Proton Conductor.

PubMed

Liu, Huixuan; Xun, Damao

2018-04-01

We fabricated an H3PO4-incorporated chitosan proton conductor film that exhibited the electric double layer effect and showed a high specific capacitance of 4.42 μF/cm2. Transparent indium tin oxide thin-film transistors gated by H3PO4-incorporated chitosan films were fabricated by sputtering through a shadow mask. The operating voltage was as low as 1.2 V because of the high specific capacitance of the H3PO4-incorporated chitosan dielectrics. The junctionless transparent indium tin oxide thin film transistors exhibited good performance, including an estimated current on/off ratio and field-effect mobility of 1.2 × 106 and 6.63 cm2V-1s-1, respectively. These low-voltage thin-film electric-double-layer transistors gated by H3PO4-incorporated chitosan are promising for next generation battery-powered "see-through" portable sensors.

Hydrophilic nanofibers as new supports for thin film composite membranes for engineered osmosis.

PubMed

Bui, Nhu-Ngoc; McCutcheon, Jeffrey R

2013-02-05

Engineered osmosis (e.g., forward osmosis, pressure-retarded osmosis, direct osmosis) has emerged as a new platform for applications to water production, sustainable energy, and resource recovery. The lack of an adequately designed membrane has been the major challenge that hinders engineered osmosis (EO) development. In this study, nanotechnology has been integrated with membrane science to build a next generation membrane for engineered osmosis. Specifically, hydrophilic nanofiber, fabricated from different blends of polyacrylonitrile and cellulose acetate via electrospinning, was found to be an effective support for EO thin film composite membranes due to its intrinsically wetted open pore structure with superior interconnectivity. The resulting composite membrane exhibits excellent permselectivity while also showing a reduced resistance to mass transfer that commonly impacts EO processes due to its thin, highly porous nanofiber support layer. Our best membrane exhibited a two to three times enhanced water flux and 90% reduction in salt passage when compared to a standard commercial FO membrane. Furthermore, our membrane exhibited one of the lowest structural parameters reported in the open literature. These results indicate that hydrophilic nanofiber supported thin film composite membranes have the potential to be a next generation membrane for engineered osmosis.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

PubMed Central

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-01-01

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

Fabrication of high T(sub c) superconductor thin film devices: Center director's discretionary fund

NASA Technical Reports Server (NTRS)

Sisk, R. C.

1992-01-01

This report describes a technique for fabricating superconducting weak link devices with micron-sized geometries etched in laser ablated Y1Ba2Cu3O(x) (YBCO) thin films. Careful placement of the weak link over naturally occurring grain boundaries exhibited in some YBCO thin films produces Superconducting Quantum Interference Devices (SQUID's) operating at 77 K.

Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

DOEpatents

Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

2013-06-11

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Influence of spray time on the optical and electrical properties of CoNi2S4 thin films

NASA Astrophysics Data System (ADS)

El Radaf, I. M.; Fouad, S. S.; Ismail, A. M.; Sakr, G. B.

2018-04-01

In this paper, a facile spray pyrolysis technique was utilized to synthesize CoNi2S4 thin films. The influence of spray time on the structural, optical and electrical properties of the CoNi2S4 thin films was studied. The x-ray diffraction studies of the CoNi2S4 thin films illustrate that the films exhibit a polycrystalline nature with cubic structure. The values of the lattice strain ε, and the dislocation density δ, were decreased as the spray time increase while the grain size has reverse manner to lattice strain ε, and the dislocation density δ. The transmittance and reflectance spectra of the CoNi2S4 thin films were recorded in the wavelength range of (400–2500) nm to evaluate the optical parameters of the CoNi2S4 thin films. Optical absorption coefficient of CoNi2S4 thin films revealed a presence of a direct energy gap and the values of energy gap were decreased from 1.68 to 1.53 eV as the spray time increases from 15 min to 45 min. The nonlinear refractive index of the CoNi2S4 thin films was increased with increasing of the spray time. The CoNi2S4 thin films exhibit single activation energy and the activation energy was decreased as the spray time increased.

Comparing the Records of Calving Front Position, Elevation, and Velocity for Neighboring Glaciers in Sermilik Fjord

NASA Astrophysics Data System (ADS)

Goliber, S. A.; Allwes, K.; Roberts, C.; Csatho, B. M.

2016-12-01

The southeast region of the Greenland Ice Sheet has thinned at a high rate compared to the rest of the Ice Sheet over the last decade and is characterized by a high diversity of outlet glacier behaviors (Csatho et al., 2014). While the entire region has experienced an overall mass loss from a warming climate, some major outlet glaciers exhibit varying amounts of thinning and thickening attributed to changes in ice dynamics. From 1980 to 2016, Helheim, Fenris, and Midgard glaciers (all located in the Sermilik fjord system) have shown dissimilar thinning and thickening patterns, retreat rates, and velocity changes despite their close geographic proximity. To understand why these glaciers behave so differently, detailed calving front and trimline reconstructions were created from historical maps, aerial photographs, and satellite imagery. Additionally, we measured elevation changes from Airborne Topographic Mapper (ATM) laser altimetry data and DEMs derived from Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) and Satellite Pour l'Observation de la Terre (SPOT) stereo imagery. The presentation compares the elevation and velocity records with the timing of calving front changes of Helheim, Fenris and Midgard glaciers. Helheim Glacier has retreated a net distance of 7 km since 1972 and exhibited a thinning-thickening- thickening pattern from 2003-2009. It retreated to its maximum inland position in 2005, followed by a re-advance to a new equilibrium position by 2007. The calving front then oscillated around a relatively stable position from 2007 to 2014. However, in 2015, it again retreated to within 2 km of its 2005 position. Contrastingly, Midgard Glacier has experienced decelerated thinning from 2003-2009, followed by an acceleration of thinning. Midgard Glacier retreated a total of 15 km between 1972 and 2015, behind its confluence with a former tributary. While Fenris Glacier exhibits a thinning-thickening-thinning pattern similar to Helheim Glacier, it has much lower velocities and has retreated only a total of 2 km since 1975.

Organic Electronic Devices Using Crosslinked Polyelectrolyte Multilayers as an Ultra-Thin Dielectric Material

DTIC Science & Technology

2006-09-01

energy band diagram illustrating the allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized ...allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized electron energy states, or traps, that...been observed with the formation of alternating bond lengths along the backbone.43 The localization of the π-electrons while forming the shorter double

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

Growth and Characterization of Sn Doped β-Ga2O3 Thin Films and Enhanced Performance in a Solar-Blind Photodetector

NASA Astrophysics Data System (ADS)

Zhao, Xiaolong; Cui, Wei; Wu, Zhenping; Guo, Daoyou; Li, Peigang; An, Yuehua; Li, Linghong; Tang, Weihua

2017-04-01

Ga2- x Sn x O3 thin films were deposited on c-plane Al2O3 (0001) substrates with different Sn content by laser molecular beam epitaxy technology (L-MBE). The Sn content x was varied from 0 to 1.0. (bar{2}01) oriented β-phase Ga2- x Sn x O3 thin films were obtained at the substrate temperature of 850°C in the vacuum pressure of 5 × 10-5 Pa. The crystal lattice expanded and the energy band-gap decreased with the increase of Sn content for Sn4+ ions incorporated into the Ga site. The n-type conductivity was generated effectively through doping Sn4+ ions in the Ga2O3 lattice in the oxygen-poor conditions. The solar-blind (SB) photodetectors (PDs) based on Ga2- x Sn x O3 ( x = 0, 0.2) thin films were fabricated. The current intensity and responsivity almost increased by one order of magnitude and the relaxation time constants became shorter for x = 0.2. Our work suggests that the performance of PD can be improved by doping Sn4+ ions in Ga2O3 thin films.

The Role of Percolation Theory in Developing Next Generation Smart Nanomaterials

NASA Astrophysics Data System (ADS)

Simien, Daneesh

2016-01-01

The incorporation of small volume fractions of nanoscale graphitic particles into varied base materials has been explored across fields ranging from automotive to aerospace to commercial plastics, with the goal of utilizing their enhanced thermal conductivity, electrical conductivity or mechanical strength. Percolation theory has emerged as a useful tool to aid in mapping and predicting the enhancement of properties based on the size and conductivity of incorporated single-walled carbon nanotubes relative to their less conductive base materials. These tools can aid researchers in the development of next generation smart nanomaterials. In this paper, we discuss the use of homogeneous fractions of length- or chirality-sorted single-walled carbon nanotubes (SWNTs) which are incorporated into thin film networks, and cement composites, and are evaluated in terms of their conductivity, mechanical properties and noise spectrum at critical percolation. We demonstrate that, near the percolation threshold, the conductivity of these highly characterized SWNT films exhibits a power law dependence on the network geometrical parameters. We also present our findings on the development of incorporated thin film SWNTs for the development of sensing technology for novel non-destructive failure diagnostic applications. SWNTs are able to be used as benign inclusions, capable of active sensing, when incorporated into cement-based composites for the purpose of detecting crack initiation. As such, we investigate the use of homogeneous length-sorted SWNTs that are randomly distributed in percolated networks capable of being an internal responsive net mechanism. Our findings demonstrate increased microstructure sensitivity of our networks for our shorter length nanotubes near their critical percolation threshold. This shows promise for the development of even more sensitive, embedded piezo-resistive SWNT-based sensors for preemptive failure detection technology.

Processing-dependent thermal stability of a prototypical amorphous metal oxide

NASA Astrophysics Data System (ADS)

Zeng, Li; Moghadam, Mahyar M.; Buchholz, D. Bruce; Li, Ran; Keane, Denis T.; Dravid, Vinayak P.; Chang, Robert P. H.; Voorhees, Peter W.; Marks, Tobin J.; Bedzyk, Michael J.

2018-05-01

Amorphous metal oxides (AMOs) are important candidate materials for fabricating next-generation thin-film transistors. While much attention has been directed toward the synthesis and electrical properties of AMOs, less is known about growth conditions that allow AMOs to retain their desirable amorphous state when subjected to high operating temperatures. Using in situ x-ray scattering and level-set simulations, we explore the time evolution of the crystallization process for a set of amorphous I n2O3 thin films synthesized by pulsed-laser deposition at deposition temperatures (Td) of -50, -25, and 0 °C. The films were annealed isothermally and the degree of crystallinity was determined by a quantitative analysis of the time-evolved x-ray scattering patterns. As expected, for films grown at the same Td, an increase in the annealing temperature TA led to a shorter delay prior to the onset of crystallization, and a faster crystallization rate. Moreover, when lowering the deposition temperature by 25 °C, a 40 °C increase in annealing temperature is needed to achieve the same time interval for the crystals to grow from 10 to 90% volume fraction of the sample. Films grown at Td=0 ∘C exhibited strong cubic texture after crystallization. A level-set method was employed to quantitatively model the texture that develops in the microstructures and to determine key parameters, such as the interface growth velocity, the nucleation density, and the activation energy. The differences observed in the crystallization processes are attributed to the changes in the atomic structure of the oxide and possible nanocrystalline inclusions that formed during the deposition of the amorphous phase.

Non-exhibition of Bragg phenomenon by chevronic sculptured thin films

NASA Astrophysics Data System (ADS)

Vepachedu, Vikas; McAtee, Patrick D.; Lakhtakia, Akhlesh

2017-08-01

The unit cell of a chevronic sculptured thin film (ChevSTF) comprises two identical columnar thin films (CTFs) except that the nanocolumns of the first are oriented at an angle Χ and nanocolumns of the second are oriented at an angle π - χ with respect to the interface of the two CTFs. A ChevSTF containing 10 unit cells was fabricated and its planewave reflectance and transmittance spectrums of this ChevSTF were measured. Despite its structural periodicity, the ChevSTF did not exhibit the Bragg phenomenon. Theoretical calculations with the CTFs modeled as biaxial dielectric materials indicated that the Bragg phenomenon would not be manifested for normal and near-normal incidence, but vestigial manifestation was possible for sufficiently oblique incidence.

A fast microchannel plate-scintillator detector for velocity map imaging and imaging mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Winter, B.; King, S. J.; Vallance, C., E-mail: claire.vallance@chem.ox.ac.uk

2014-02-15

The time resolution achievable using standard position-sensitive ion detectors, consisting of a chevron pair of microchannel plates coupled to a phosphor screen, is primarily limited by the emission lifetime of the phosphor, around 70 ns for the most commonly used P47 phosphor. We demonstrate that poly-para-phenylene laser dyes may be employed extremely effectively as scintillators, exhibiting higher brightness and much shorter decay lifetimes than P47. We provide an extensive characterisation of the properties of such scintillators, with a particular emphasis on applications in velocity-map imaging and microscope-mode imaging mass spectrometry. The most promising of the new scintillators exhibits an electron-to-photonmore » conversion efficiency double that of P47, with an emission lifetime an order of magnitude shorter. The new scintillator screens are vacuum stable and show no signs of signal degradation even over longer periods of operation.« less

Evaluation of elastic properties of nanoporous silicon oxide thin films by picosecond laser ultrasonics

NASA Astrophysics Data System (ADS)

Mechri, C.; Ruello, P.; Gusev, V.; Breteau, J. M.; Mounier, D.; Henderson, M.; Gibaud, A.; Dourdain, S.

2008-01-01

Picosecond laser ultrasonics uses femtosecond laser pulses for the generation and detection of acoustic pulses with a typical duration between few picoseconds and few hundreds of pico seconds. The shorter the duration of the acoustic pulse is, the more precisely could be made the measurements of the film thickness [C. Thomsen et al., Phys. Rev. B 34, 4129 (1986)] and the elastic modulus by pulse-echo method or through Brillouin scattering detection. In this short communication we report the results of the evaluation of the properties of nanoporous silicon oxide thin films which present potential low-k and thermal barrier properties and are also of great interest for the microelectronic industry to replace the traditional silicate glass films in order to decrease the resistance-capacitance transition delay in the VLSI circuits. Most of the studies that have been carried so far have treated the optical properties of such structures. We report the results of the evaluation of acoustic properties of nanoporous thin films.

Craniofacial morphometric analysis of mandibular prognathism.

PubMed

Chang, H P; Liu, P H; Yang, Y H; Lin, H C; Chang, C H

2006-03-01

The purpose of this study was to provide more information about the morphological characteristics of the craniofacial complex in mandibular prognathism. Forty young adult males having mandibular prognathism were compared with 40 having normal occlusion. This was conducted to carry out geometric morphometric assessments to localize alterations, using Procrustes analysis and thin-plate spline analysis, in addition to conventional cephalometric techniques. Procrustes analysis indicated that the mean craniofacial, midfacial and mandibular morphology was significantly different in prognathic subjects compared with normal controls. This finding was corroborated by the multivariate Hotelling T(2)-test of cephalometric variables. Mandibular prognathism demonstrated a shorter and slightly retropositioned maxilla, a greater total length and anterior positioning of the mandible. Thin-plate spline analysis revealed a developmental diminution of the palatomaxillary region anteroposteriorly and a developmental elongation of the mandible anteroposteriorly, leading to the appearance of a prognathic mandibular profile. In conclusion, thin-plate spline analysis seems to provide a valuable supplement for conventional cephalometric analysis because the complex patterns of craniofacial shape change are visualized suggestive by means of grid deformations.

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2- x Ce x CuO4 thin films

NASA Astrophysics Data System (ADS)

Xiong, Fei; Zhang, Hui; Yang, Sheng'an; Li, Dongqi; Zhang, Zheng; Chen, Qingming

2015-08-01

Large laser-induced thermoelectric voltages (LITVs) are measured in the electron-doped Nd2- x Ce x CuO4 thin films grown on the vicinal-cut SrTiO3 substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration.

Flexible Polymer/Metal/Polymer and Polymer/Metal/Inorganic Trilayer Transparent Conducting Thin Film Heaters with Highly Hydrophobic Surface.

PubMed

Kang, Tae-Woon; Kim, Sung Hyun; Kim, Cheol Hwan; Lee, Sang-Mok; Kim, Han-Ki; Park, Jae Seong; Lee, Jae Heung; Yang, Yong Suk; Lee, Sang-Jin

2017-09-27

Polymer/metal/polymer and polymer/metal/inorganic trilayer-structured transparent electrodes with fluorocarbon plasma polymer thin film heaters have been proposed. The polymer/metal/polymer and polymer/metal/inorganic transparent conducting thin films fabricated on a large-area flexible polymer substrate using a continuous roll-to-roll sputtering process show excellent electrical properties and visible-light transmittance. They also exhibit water-repelling surfaces to prevent wetting and to remove contamination. In addition, the adoption of a fluorocarbon/metal/fluorocarbon film permits an outer bending radius as small as 3 mm. These films have a sheet resistance of less than 5 Ω sq -1 , sufficient to drive light-emitting diode circuits. The thin film heater with the fluorocarbon/Ag/SiN x structure exhibits excellent heating characteristics, with a temperature reaching 180 °C under the driving voltage of 13 V. Therefore, the proposed polymer/metal/polymer and polymer/metal/inorganic transparent conducting electrodes using polymer thin films can be applied in flexible and rollable displays as well as automobile window heaters and other devices.

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Surface-mounted MOF templated fabrication of homochiral polymer thin film for enantioselective adsorption of drugs.

PubMed

Gu, Zhi-Gang; Fu, Wen-Qiang; Liu, Min; Zhang, Jian

2017-01-26

A self-polymerized chiral monomer 3,4-dihydroxy-l-phenylalanine (l-DOPA) has been introduced into the pores of an achiral surface-mounted metal organic framework (SURMOF), and then the homochiral poly(l-DOPA) thin film has been successfully formed after UV light irradiation and etching of the SURMOF. Remarkably, such a poly(l-DOPA) thin film exhibited enantioselective adsorption of naproxen. This study opened a SURMOF-templated approach for preparing porous polymer thin films.

Adult microbiota-deficient mice have distinct dendritic morphological changes: differential effects in the amygdala and hippocampus.

PubMed

Luczynski, Pauline; Whelan, Seán O; O'Sullivan, Colette; Clarke, Gerard; Shanahan, Fergus; Dinan, Timothy G; Cryan, John F

2016-11-01

Increasing evidence implicates the microbiota in the regulation of brain and behaviour. Germ-free mice (GF; microbiota deficient from birth) exhibit altered stress hormone signalling and anxiety-like behaviours as well as deficits in social cognition. Although the mechanisms underlying the ability of the gut microbiota to influence stress responsivity and behaviour remain unknown, many lines of evidence point to the amygdala and hippocampus as likely targets. Thus, the aim of this study was to determine if the volume and dendritic morphology of the amygdala and hippocampus differ in GF versus conventionally colonized (CC) mice. Volumetric estimates revealed significant amygdalar and hippocampal expansion in GF compared to CC mice. We also studied the effect of GF status on the level of single neurons in the basolateral amygdala (BLA) and ventral hippocampus. In the BLA, the aspiny interneurons and pyramidal neurons of GF mice exhibited dendritic hypertrophy. The BLA pyramidal neurons of GF mice had more thin, stubby and mushroom spines. In contrast, the ventral hippocampal pyramidal neurons of GF mice were shorter, less branched and had less stubby and mushroom spines. When compared to controls, dentate granule cells of GF mice were less branched but did not differ in spine density. These findings suggest that the microbiota is required for the normal gross morphology and ultrastructure of the amygdala and hippocampus and that this neural remodelling may contribute to the maladaptive stress responsivity and behavioural profile observed in GF mice. © 2016 The Authors. European Journal of Neuroscience published by Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

Preparation of CIGS-based solar cells using a buffered electrodeposition bath

DOEpatents

Bhattacharya, Raghu Nath

2007-11-20

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

DC magnetron sputtered polyaniline-HCl thin films for chemical sensing applications.

PubMed

Menegazzo, Nicola; Boyne, Devon; Bui, Holt; Beebe, Thomas P; Booksh, Karl S

2012-07-03

Thin films of conducting polymers exhibit unique chemical and physical properties that render them integral parts in microelectronics, energy storage devices, and chemical sensors. Overall, polyaniline (PAni) doped in acidic media has shown metal-like electronic conductivity, though exact physical and chemical properties are dependent on the polymer structure and dopant type. Difficulties arising from poor processability render production of doped PAni thin films particularly challenging. In this contribution, DC magnetron sputtering, a physical vapor deposition technique, is applied to the preparation of conductive thin films of PAni doped with hydrochloric acid (PAni-HCl) in an effort to circumvent issues associated with conventional thin film preparation methods. Samples manufactured by the sputtering method are analyzed along with samples prepared by conventional drop-casting. Physical characterization (atomic force microscopy, AFM) confirm the presence of PAni-HCl and show that films exhibit a reduced roughness and potentially pinhole-free coverage of the substrate. Spectroscopic evidence (UV-vis, FT-IR, and X-ray photoelectron spectroscopy (XPS)) suggests that structural changes and loss of conductivity, not uncommon during PAni processing, does occur during the preparation process. Finally, the applicability of sputtered films to gas-phase sensing of NH(3) was investigated with surface plasmon resonance (SPR) spectroscopy and compared to previous contributions. In summary, sputtered PAni-HCl films exhibit quantifiable, reversible behavior upon exposure to NH(3) with a calculated LOD (by method) approaching 0.4 ppm NH(3) in dry air.

Advanced platform for the in-plane ZT measurement of thin films

NASA Astrophysics Data System (ADS)

Linseis, V.; Völklein, F.; Reith, H.; Nielsch, K.; Woias, P.

2018-01-01

The characterization of nanostructured samples with at least one restricted dimension like thin films or nanowires is challenging, but important to understand their structure and transport mechanism, and to improve current industrial products and production processes. We report on the 2nd generation of a measurement chip, which allows for a simplified sample preparation process, and the measurement of samples deposited from the liquid phase using techniques like spin coating and drop casting. The new design enables us to apply much higher temperature gradients for the Seebeck coefficient measurement in a shorter time, without influencing the sample holder's temperature distribution. Furthermore, a two membrane correction method for the 3ω thermal conductivity measurement will be presented, which takes the heat loss due to radiation into account and increases the accuracy of the measurement results significantly. Errors caused by different sample compositions, varying sample geometries, and different heat profiles are avoided with the presented measurement method. As a showcase study displaying the validity and accuracy of our platform, we present temperature-dependent measurements of the thermoelectric properties of an 84 nm Bi87Sb13 thin film and a 15 μm PEDOT:PSS thin film.

Zeroth order Fabry-Perot resonance enabled ultra-thin perfect light absorber using percolation aluminum and silicon nanofilms

DOE PAGES

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

2016-03-04

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Voltage-controlled quantum light from an atomically thin semiconductor

NASA Astrophysics Data System (ADS)

Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M.; Beams, Ryan; Vamivakas, A. Nick

2015-06-01

Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated. In this Letter we demonstrate the possibility of leveraging the atomically thin semiconductor tungsten diselenide (WSe2) as a host for quantum dot-like defects. We report that this previously unexplored solid-state quantum emitter in WSe2 generates single photons with emission properties that can be controlled via the application of external d.c. electric and magnetic fields. These new optically active quantum dots exhibit excited-state lifetimes on the order of 1 ns and remarkably large excitonic g-factors of 10. It is anticipated that WSe2 quantum dots will provide a novel platform for integrated solid-state quantum photonics and quantum information processing, as well as a rich condensed-matter physics playground with which to explore the coupling of quantum dots and atomically thin semiconductors.

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

NASA Astrophysics Data System (ADS)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

DTIC Science & Technology

2014-09-01

sputter-deposition. A large band gap coupled with low absorption provide optical transparency over a broad range in the electromagnetic spectrum; HfO2...k) in the middle of the visible spec- trum, and C influences n(k) to a greater extent in shorter wave - lengths [31]. Note that this principle behind...Approved for publicnanocrystalline HfO2 films crystallize in monoclinic structure. Fur - thermore, increasing Ts results in improved structural order and

Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties

PubMed Central

Agati, M.; Amiard, G.; Le Borgne, V.; Castrucci, P.; Dolbec, R.; De Crescenzi, M.; El Khakani, M. A.; Boninelli, S.

2016-01-01

Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled plasma (ICP) based process. Two families of SiNWs have been identified, namely long SiNWs (up to 2–3 micron in length) and shorter ones (~100 nm). SiNWs were found to consist of a Si core (with diameter as thin as 2 nm) and a silica shell, of which the thickness varies from 5 to 20 nm. By combining advanced transmission electron microscopy (TEM) techniques, we demonstrate that the growth of the long SiNWs occurred via the Oxide Assisted Growth (OAG) mechanism, while the Vapor Liquid Solid (VLS) mechanism is responsible for the growth of shorter ones. Energy filtered TEM analyses revealed, in some cases, the existence of chapelet-like Si nanocrystals embedded in an otherwise silica nanowire. Such nanostructures are believed to result from the exposure of some OAG SiNWs to high temperatures prevailing inside the reactor. Finally, the intense photoluminescence (PL) of these ICP-grown SiNWs in the 620–950 nm spectral range is a clear indication of the occurrence of quantum confinement. Such a PL emission is in accordance with the TEM results which revealed that the size of nanostructures are indeed below the exciton Bohr radius of silicon. PMID:27874057

Interaction of ultrashort laser pulses with epsilon-near-zero materials (Conference Presentation)

NASA Astrophysics Data System (ADS)

Boyd, Robert W.

2017-05-01

Abstract: The nonlinear optical response of a material is conventionally assumed to be very much smaller than its linear response. Here we report that the nonlinear contribution to the refractive index of a sample of indium-tin oxide can be much larger than the linear contribution when the optical wavelength is close to the material's bulk plasma wavelength, where the material exhibits epsilon-near-zero behavior. In particular, we demonstrate that a change in refractive index as large as 0.7 can be obtained in an ultra-thin indium-tin oxide film using an optical intensity of 140 GW/cm2. Nonlinear optical phenomena result from the light-induced modification of the optical properties of a material lead to a broad range of applications, including microscopy, all-optical data processing, and quantum information. However, nonlinear (NL) effects are typically extremely weak. The size of nonlinear effects is typically limited by the largest intensity that can be used without permanently damaging of the material. Consequently, the resulting change in refractive index is typically of the order of 0.001 or smaller. A long-standing goal of nonlinear optics (NLO) has been the development of materials that can display a light-induced change in the refractive index of the order of unity. Such materials would lead to exciting new applications of NLO. Indeed, much effort in the fields of plasmonics and metamaterials is devoted to the development of such materials. Furthermore, it has been suggested that materials with vanishing permittivity, commonly known as epsilon-nearzero (ENZ) materials, can be used to induce highly nonlinear phenomena and unusual phase-matching behavior. In this work, we describe our studies of indium-tin oxide (ITO) at its ENZ wavelength, and we demonstrate a refractive index change of 0.7. Materials possessing free charges, such as metals and doped semiconductors, exhibit a vanishing permittivity at the bulk plasmon wavelength. The zero-permittivity wavelength in doped semiconductors typically lies at infrared wavelengths and can be fine tuned by controlling the level of doping. Here we study the case of an ultra-thin layer of ITO exhibiting ENZ behavior at wavelengths around 1.24 µm. We show that in this spectral region the nonlinear response (intensity-dependent change in refractive index, Δn) is enhanced approximately 2000-fold with respect to that observed at shorter wavelengths and that a Δn of the order of unity can be observed.

Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2017-12-01

Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

PubMed Central

Seemen, Helina; Ritslaid, Peeter; Rähn, Mihkel; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Dueñas, Salvador; Castán, Helena; García, Héctor

2018-01-01

Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0. PMID:29441257

Decrease of oxygen vacancy by Zn-doped for improving solar-blind photoelectric performance in β-Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Guo, Daoyou; Qin, Xinyuan; Lv, Ming; Shi, Haoze; Su, Yuanli; Yao, Guosheng; Wang, Shunli; Li, Chaorong; Li, Peigang; Tang, Weihua

2017-11-01

Highly (201) oriented Zn-doped β-Ga2O3 thin films with different dopant concentrations were grown on (0001) sapphire substrates by radio frequency magnetron sputtering. With the increase of Zn dopant concentration, the crystal lattice expands, the energy band gap shrinks, and the oxygen vacancy concentration decreases. Both the metal semiconductor metal (MSM) structure photodetectors based on the pure and Zn-doped β-Ga2O3 thin films exhibit solar blind UV photoelectric property. Compared to the pure β-Ga2O3 photodetector, the Zn-doped one exhibits a lower dark current, a higher photo/dark current ratio, a faster photoresponse speed, which can be attributed to the decreases of oxygen vacancy concentration.[Figure not available: see fulltext.

Bioinspired Superhydrophobic Highly Transmissive Films for Optical Applications.

PubMed

Vüllers, Felix; Gomard, Guillaume; Preinfalk, Jan B; Klampaftis, Efthymios; Worgull, Matthias; Richards, Bryce; Hölscher, Hendrik; Kavalenka, Maryna N

2016-11-01

Inspired by the transparent hair layer on water plants Salvinia and Pistia, superhydrophobic flexible thin films, applicable as transparent coatings for optoelectronic devices, are introduced. Thin polymeric nanofur films are fabricated using a highly scalable hot pulling technique, in which heated sandblasted steel plates are used to create a dense layer of nano- and microhairs surrounding microcavities on a polymer surface. The superhydrophobic nanofur surface exhibits water contact angles of 166 ± 6°, sliding angles below 6°, and is self-cleaning against various contaminants. Additionally, subjecting thin nanofur to argon plasma reverses its surface wettability to hydrophilic and underwater superoleophobic. Thin nanofur films are transparent and demonstrate reflection values of less than 4% for wavelengths ranging from 300 to 800 nm when attached to a polymer substrate. Moreover, used as translucent self-standing film, the nanofur exhibits transmission values above 85% and high forward scattering. The potential of thin nanofur films for extracting substrate modes from organic light emitting diodes is tested and a relative increase of the luminous efficacy of above 10% is observed. Finally, thin nanofur is optically coupled to a multicrystalline silicon solar cell, resulting in a relative gain of 5.8% in photogenerated current compared to a bare photovoltaic device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Melting Behavior of Al/Pb/Sn/Al Multilayered Thin Films

NASA Astrophysics Data System (ADS)

Khan, Patan Yousaf; Devi, M. Manolata; Biswas, Krishanu

2015-09-01

Metals or alloy nanoparticles (NPs) have been reported to exhibit superheating on melting when coated with higher melting point material or embedded in a matrix. This is due to the suppression of the heterogeneous nucleation of the melt at the epitaxial interface. For 2D thin films, this necessary condition is not feasible because even if a thin film is sandwiched between higher melting temperature materials with coherent interfaces, the heterogeneous nucleation of melt is possible at various detects. However, it has earlier been reported that 2D thin films of the pure metal sandwiched by other materials can exhibit superheating by suppression of melt growth. In order to probe this effect in case of alloy thin films, the present investigation has been carried out on Pb/Sn multilayers sandwiched between Al layers. The present study shows that such sandwiched thin films prepared by accumulative roll bonding process cause the formation of biphasic NPs in the intermixed region of Pb and Sn. Al layers undergo severe plastic deformation, leading to the generation of dislocations and sub-grain boundaries. DSC (differential canning calorimeter) thermograms of the films indicate superheating of 3 K to 6 K (or 3 °C to 6 °C). Theoretical analysis using currently available literatures has been carried out to justify the finding in the present investigation.

The synthesis of multifunctional porous honey comb-like La2O3 thin film for supercapacitor and gas sensor applications.

PubMed

Yadav, A A; Lokhande, A C; Pujari, R B; Kim, J H; Lokhande, C D

2016-12-15

The porous honey comb-like La 2 O 3 thin films have been synthesized using one step spray pyrolysis method. The influence of sprayed solution quantity on properties of La 2 O 3 thin films is studied using X-ray diffraction, Fourier transform spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, optical absorption and Brunauer-Emmett-Teller techniques. Morphology of La 2 O 3 electrode is controlled with sprayed solution quantity. The supercapacitive properties of La 2 O 3 thin film electrode are investigated using cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance techniques. The La 2 O 3 film electrode exhibited the specific capacitance of the 166Fg -1 with 85% stability for the 3000 cycles. The La 2 O 3 film electrode exhibited sensitivity of 68 at 523K for 500ppm CO 2 gas concentration. The possible CO 2 sensing mechanism is discussed. Copyright © 2016 Elsevier Inc. All rights reserved.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

Lithospheric structure beneath Mainland China from ambient noise tomography

NASA Astrophysics Data System (ADS)

Huang, J.; Peng, J.; Liu, Z.

2017-12-01

The Chinese continent is composed of several Precambrian craton blocks and Phanerozoic orogenic belts. To better understand the complex geological structure and tectonic evolution, it is important to develop a high-resolution shear velocity model of the lithosphere. In this study, we try to use ambient noise tomography to image the lithospheric structure beneath mainland China. However, in contrast with most of the existing ambient noise tomography studies which focus on the surface wave at periods shorter than 60 s, we apply the technique of phase-weighted stack (PWS) (Schimmel et al., 2011) when stacking the cross-correlations of ambient noise. We could extract long-period ( 125 s) dispersions to image the high-resolution lithospheric structure. We collected continuous seismic records from the broadband stations of China Regional Seismic Networks and NECESSArray between Sept., 2009 and Aug., 2011. We constructed Rayleigh wave group and phase velocity maps on 0.25 ×0.25 degree grids, and then inverted a high-resolution lithospheric 3D shear velocity model up to 150 km depth. The results exhibited pronounced lateral heterogeneity of the lithospheric structure of the study area. It is obvious that the high velocities beneath the Ordos and Sichuan Basin exceeds 150 km, representing the strong and thick lithosphere. The lithospheric thickness gradually thins from west to east for the North China Craton (NCC) and the Yangtze Craton (YZC). The lithospheric thickness of the eastern NCC is about 80-90 km, and which beneath the Bohai Bay is thinnest, only 60-80 km. For the lower YZC and the Cathaysia block, the lithospheric thickness is about 70-80 km, slightly thinner than the eastern NCC. The observed thin lithosphere (about 60-80 km) beneath the eastern Northeast China is likely to be associated with the Tanlu fault and the Quaternary Changbaishan and Jingpohu volcano. The lithosphere thickness beneath the Tanlu fault is thin or absent, which possibly be related to the upwelling of the hot asthenosphere, and the fault provides channels. *This work was supported by National Key R&D Plan (Grant No. 2017YFC0601406). KEYWORDS: Ambient noise, Phase-weighted stack, Lithosphere, Shear velocity

Corrigendum to "Co-occurrence of linear and circular dichroism in chiral sculptured ZrO2 thin films" [Opt. Mater. 75 (January 2018) 319-324

NASA Astrophysics Data System (ADS)

Muhammad, Zahir; Wali, Faiz; Song, Li

2018-05-01

The authors regret .

Paced mating behavior is affected by clitoral-vaginocervical lidocaine application in combination with sexual experience.

PubMed

Meerts, Sarah H; Strnad, Helen K; Schairer, Rosemary S

2015-03-01

The present study tested the effects of lidocaine anesthetic ointment applied to the vaginocervical (Experiment 1) or clitoral-vaginocervical (Experiment 2) areas on the display of paced mating behavior over the course of five weekly tests in ovariectomized, hormone-primed, Long-Evans rats. Experiment 3 tested whether rats that acquired sexual experience without ointment application would exhibit altered paced mating behavior on a fifth test under clitoral-vaginocervical lidocaine or vehicle application. Although rats in Experiment 1 and Experiment 2 exhibited shorter contact-return latencies after intromission and reduced likelihood of leaving the male compartment following mounts and intromissions after gaining sexual experience, only rats that received clitoral-vaginocervical lidocaine exhibited altered paced mating behavior relative to vehicle. Specifically, clitoral-vaginocervical lidocaine resulted in shorter contact-return latency to ejaculation and greater percentage of time with the male. Paced mating behavior of sexually experienced rats in Experiment 3 was not disrupted when tested after clitoral-vaginocervical lidocaine treatment. Together, these studies suggest that the sensory input during repeated mating encounters affects the pattern of paced mating behavior that develops with sexual experience. Copyright © 2014 Elsevier Inc. All rights reserved.

Probing the Galactic Binary Black Hole Spin with Photon Timing

NASA Technical Reports Server (NTRS)

Kazanas, Demos

2007-01-01

It is generally considered that the X-ray emission in AGN and Galactic Black Hole Candidates is produced by flares above the surface of a geometrically thin optically thick accretion disk, which extends down to the Innermost Stable Circular Orbit (ISCO) of the black hole. We consider the influence of the black hole geometry on the light curves of these flares. To this end we follow a large number of photon orbits emitted impulsively in a locally isotropic fashion, at any phase of the disk orbit and examine their arrival times at infinity by an observer near the plane of the disk. We find out that the presence of the black hole spin induces a certain delay in the photon arrivals, as prograde photon orbits reach the observer on shorter (on the average) times than the retrograde ones. We form a histogram of the differences in photon time arrivals and we find that it exhibits several well defined peaks depending on the flare position and the black hole spin separated by $\\Delta t\\slmeq 30 M$, where M is the black hole mass. The peaks disappear as the spin parameter goes to zero, implying that one could in principle measure the value of the black hole spin with timing measurements of sufficiently high signal to noise ratio.

Probing the Galactic Binary Black Hole Spin with Photon Timing

NASA Technical Reports Server (NTRS)

Kazanas, Demosthenes

2007-01-01

It is generally considered that the X-ray emission in AGN and Galactic Black Hole Candidates is produced by flares above the surface of a geometrically thin optically thick accretion disk, which extends down to the Innermost Stable Circular Orbit (ISCO) of the black hole. We consider the influence of the black hole geometry on the light curves of these flares. To this end we follow a large number of photon orbits emitted impulsively in a locally isotropic fashion, at any phase of the disk orbit and examine their arrival times at infinity by an observer near the plane of the disk. We find out that the presence of the black hole spin induces a certain delay in the photon arrivals, as prograde photon orbits reach the observer on shorter (on the average) times than the retrograde ones. We form a histogram of the differences in photon time arrivals and we find that it exhibits several well defined peaks depending on the flare position and the black hole spin separated by $\\Delta t \\simeq 30 M$, where M is the black hole mass. The peaks disappear as the spin parameter goes to zero, implying that one could in principle measure the value of the black hole spin with timing measurements of sufficiently high signal to noise ratio.

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

NASA Astrophysics Data System (ADS)

Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, Lajos; Pécz, Bela; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan

2010-11-01

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

Reduction of thermal conductivity in phononic nanomesh structures.

PubMed

Yu, Jen-Kan; Mitrovic, Slobodan; Tham, Douglas; Varghese, Joseph; Heath, James R

2010-10-01

Controlling the thermal conductivity of a material independently of its electrical conductivity continues to be a goal for researchers working on thermoelectric materials for use in energy applications and in the cooling of integrated circuits. In principle, the thermal conductivity κ and the electrical conductivity σ may be independently optimized in semiconducting nanostructures because different length scales are associated with phonons (which carry heat) and electric charges (which carry current). Phonons are scattered at surfaces and interfaces, so κ generally decreases as the surface-to-volume ratio increases. In contrast, σ is less sensitive to a decrease in nanostructure size, although at sufficiently small sizes it will degrade through the scattering of charge carriers at interfaces. Here, we demonstrate an approach to independently controlling κ based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film. These films are patterned with periodic spacings that are comparable to, or shorter than, the phonon mean free path. The nanomesh structure exhibits a substantially lower thermal conductivity than an equivalently prepared array of silicon nanowires, even though this array has a significantly higher surface-to-volume ratio. Bulk-like electrical conductivity is preserved. We suggest that this development is a step towards a coherent mechanism for lowering thermal conductivity.

Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

NASA Astrophysics Data System (ADS)

Gupta, Vinay; Gupta, Shubhra; Miura, Norio

Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo 2O 4 spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo 2O 4 spinel thin film exhibited a high specific capacitance value of 580 F g -1 and an energy density of 32 Wh kg -1 at the power density of 4 kW kg -1, accompanying with good cyclic stability.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

PubMed Central

Sinnarasa, Inthuga; Thimont, Yohann; Presmanes, Lionel; Barnabé, Antoine; Tailhades, Philippe

2017-01-01

P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed. PMID:28654011

A Simple Demonstration of a Gas Evolution Oscillator.

ERIC Educational Resources Information Center

Kaushik, S. M.; And Others

1986-01-01

The best-characterized gas evolution oscillator is the dehydration of formic acid in concentrated sulfuric acid. Reports on an improved demonstration which exhibits at least as dramatic behavior, although for a shorter time. Includes background information, principles illustrated, procedures used, and typical results obtained. (JN)

Superconductive microstrip exhibiting negative differential resistivity

DOEpatents

Huebener, R.P.; Gallus, D.E.

1975-10-28

A device capable of exhibiting negative differential electrical resistivity over a range of values of current and voltage is formed by vapor- depositing a thin layer of a material capable of exhibiting superconductivity on an insulating substrate, establishing electrical connections at opposite ends of the deposited strip, and cooling the alloy into its superconducting range. The device will exhibit negative differential resistivity when biased in the current- induced resistive state.

Synthesizing skyrmion bound pairs in Fe-Gd thin films

DOE PAGES

Lee, J. C. T.; Chess, J. J.; Montoya, S. A.; ...

2016-07-11

Here, we show that properly engineered amorphous Fe-Gd alloy thin films with perpendicular magnetic anisotropy exhibit bound pairs of like-polarity, opposite helicity skyrmions at room temperature. Magnetic mirror symmetry planes present in the stripe phase, instead of chiral exchange, determine the internal skyrmion structure and the net achirality of the skyrmion phase. Our study shows that stripe domain engineering in amorphous alloy thin films may enable the creation of skyrmion phases with technologically desirable properties.

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source.

PubMed

Kim, Ki Seok; Kim, Ki Hyun; Ji, You Jin; Park, Jin Woo; Shin, Jae Hee; Ellingboe, Albert Rogers; Yeom, Geun Young

2017-10-19

Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4 at a low temperature of 80 °C. The thin deposited SiN x film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x film exhibited a low WVTR of 4.39 × 10 -4  g (m 2 · day) -1 for a single thin (430 nm thick) film SiN x and the electrical characteristics of OLED devices before and after the thin SiN x film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x on the OLED device.

Thermally stimulated nonlinear refraction in gelatin stabilized Cu-PVP nanocomposite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamgadge, Y. S., E-mail: ystamgadge@gmail.com; Atkare, D. V.; Pahurkar, V. G.

2016-05-06

This article illustrates investigations on thermally stimulated third order nonlinear refraction of Cu-PVP nanocomposite thin films. Cu nanoparticles have been synthesized using chemical reduction method and thin films in PVP matrix have been obtained using spin coating technique. Thin films have been characterized by X-ray diffraction (XRD) and Ultraviolet-visible (UV-vis) spectroscopyfor structural and linear optical studies. Third order nonlinear refraction studies have been performed using closed aperture z-scan technique under continuous wave (CW) He-Ne laser. Cu-PVP nanocomposites are found to exhibit strong nonlinear refractive index stimulated by thermal lensing effect.

Decay Rate of the Nuclear Isomer Th 229 (3 /2+,7.8 eV ) in a Dielectric Sphere, Thin Film, and Metal Cavity

NASA Astrophysics Data System (ADS)

Tkalya, E. V.

2018-03-01

The main decay channels of the anomalous low-energy 3 /2+(7.8 ±0.5 eV ) isomeric level of the Th 229 nucleus, namely the γ emission and internal conversion, inside a dielectric sphere, dielectric thin film, and conducting spherical microcavity are investigated theoretically, taking into account the effect of media interfaces. It is shown that (1) the γ decay rate of the nuclear isomer inside a dielectric thin film and dielectric microsphere placed in a vacuum or in a metal cavity can decrease (increase) in dozen of times, (2) the γ activity of the distributed source as a function of time can be nonexponential, and (3) the metal cavity, whose size is of the order of the radiation wavelength, does not affect the probability of the internal conversion in Th 229 , because the virtual photon attenuates at much shorter distances and the reflected wave is very weak.

Silicon surface passivation by polystyrenesulfonate thin films

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Shen, Yanjiao; Guo, Jianxin; Chen, Bingbing; Fan, Jiandong; Li, Feng; Liu, Haixu; Xu, Ying; Mai, Yaohua

2017-02-01

The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1-5 Ω.cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708 mV and 697 mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to be responsible for the passivation mechanism.

Multi-band polarimetry of post-asymptotic giant branch stars - I. Optical measurements

NASA Astrophysics Data System (ADS)

Akras, S.; Ramírez Vélez, J. C.; Nanouris, N.; Ramos-Larios, G.; López, J. M.; Hiriart, D.; Panoglou, D.

2017-04-01

We present new optical broad-band (UBVRI) aperture polarimetric observations of 53 post-asymptotic giant branch (AGB) stars selected to exhibit a large near-infrared excess. 24 out of the 53 stars (45 per cent of our sample) are presented for the first time. A statistical analysis shows four distinctive groups of polarized post-AGB stars: unpolarized or very lowly polarized (degree of polarization or DoP < 1 per cent), lowly polarized (1 per cent < DoP < 4 per cent), moderately polarized (4 per cent < DoP < 8 per cent) and highly polarized (DoP > 8 per cent). 23 out of the 53 (66 per cent) belong to the first group, 10 (19 per cent) to the second, five (9 per cent) to the third and only three (6 per cent) to the last group. Approximately 34 per cent of our sample was found to be unpolarized objects, which is close to the percentage of round planetary nebulae. On average, the low and moderate groups show a wavelength-dependent polarization that increases towards shorter wavelengths, implying an intrinsic origin of the polarization, which signifies a Rayleigh-like scattering spectrum typical for non-symmetrical envelopes composed principally of small dust grains. The moderately polarized stars exhibit higher K - W3 and W1 - W3 colour indices compared with the group of lowly polarized stars, suggesting a possible relation between DoP and mass-loss rate. Moreover, they are found to be systematically colder (redder in B - V), which may be associated with the condensation process close to these stars that results in a higher degree of polarization. We also provide evidence that multiple scattering in optically thin polar outflows is the mechanism that gives high DoP in post-AGB stars with bipolar or multi-polar envelopes.

Optimization of the antireflection coating of thin epitaxial crystalline silicon solar cells

DOE PAGES

Selj, Josefine K.; Young, David; Grover, Sachit

2015-08-28

In this study we use an effective weighting function to include the internal quantum efficiency (IQE) and the effective thickness, Te, of the active cell layer in the optical modeling of the antireflection coating (ARC) of very thin crystalline silicon solar cells. The spectrum transmitted through the ARC is hence optimized for efficient use in the given cell structure and the solar cell performance can be improved. For a 2-μm thick crystalline silicon heterojunction solar cell the optimal thickness of the Indium Tin Oxide (ITO) ARC is reduced by ~8 nm when IQE data and effective thickness are taken intomore » account compared to the standard ARC optimization, using the AM1.5 spectrum only. The reduced ARC thickness will shift the reflectance minima towards shorter wavelengths and hence better match the absorption of very thin cells, where the short wavelength range of the spectrum is relatively more important than the long, weakly absorbed wavelengths. For this cell, we find that the optimal thickness of the ITO starts at 63 nm for very thin (1 μm) active Si layer and then increase with increasing T e until it saturates at 71 nm for T e > 30 μm.« less

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film.

PubMed

Wu, Chiu-Hsien; Jiang, Guo-Jhen; Chang, Kai-Wei; Deng, Zu-Yin; Li, Yu-Ning; Chen, Kuen-Lin; Jeng, Chien-Chung

2018-01-09

In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60-70 ppb also showed a good response. The resistance change (Δ R ) and sensitivity ( S ) were linearly dependent on the ozone concentration. The response time ( T 90-res ), recovery time ( T 90-rec ), and time constant (τ) showed first-order exponential decay with increasing ozone concentration. The resistance-time curve shows that the maximum resistance change rate (dRg/dt) is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ), and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications.

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

PubMed Central

Wu, Chiu-Hsien; Jiang, Guo-Jhen; Chang, Kai-Wei; Deng, Zu-Yin; Li, Yu-Ning; Chen, Kuen-Lin; Jeng, Chien-Chung

2018-01-01

In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60–70 ppb also showed a good response. The resistance change (ΔR) and sensitivity (S) were linearly dependent on the ozone concentration. The response time (T90-res), recovery time (T90-rec), and time constant (τ) showed first-order exponential decay with increasing ozone concentration. The resistance–time curve shows that the maximum resistance change rate (dRg/dt) is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ), and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications. PMID:29315218

Design of thin-film photonic crystal waveguides

NASA Astrophysics Data System (ADS)

Silvestre, E.; Pottage, J. M.; Russell, P. St. J.; Roberts, P. J.

2000-08-01

We present numerical designs for single-mode leak-free photonic crystal waveguides exhibiting strongly anisotropic spatial and temporal dispersion. These structures may be produced quite simply by drilling regular arrays of holes into thin films of high refractive index, and permit the realization of highly compact optical elements and wavelength division multiplexing devices.

Structural, optical and NO2 gas sensing properties of ZnMgO thin films prepared by the sol gel method

NASA Astrophysics Data System (ADS)

Chebil, W.; Boukadhaba, M. A.; Madhi, I.; Fouzri, A.; Lusson, A.; Vilar, C.; Sallet, V.

2017-01-01

In this present work, ZnO and ZnMgO thin films prepared by a sol-gel process were deposited on glass substrates via spin coating technique. The structural, morphological and optical properties of the obtained films were investigated. X-ray diffraction study revealed that all layers exhibit a hexagonal wurtzite structure without any secondary phase segregation. The atomic force microscopy (AFM) depicts that the grains size of ours samples decreases as magnesium content increases. The absorption spectra obtained on ZnMgO thin films show a band gap tuning from 3.19 to 3.36 eV, which is also consistent with blue shifting of near-band edge PL emission, measured at low temperature. The incorporated amount of magnesium was calculated and confirmed by EDX. The gas sensing performances were tested in air containing NO2 for different operating temperatures. The experimental result exhibited that ZnMgO sensors shows a faster response and recovery time than the ZnO thin films. The resistivity and the sensor response as function of Mg content were also investigated.

Liquid crystals for organic thin-film transistors

PubMed Central

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-ichi

2015-01-01

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V−1 s−1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics. PMID:25857435

Liquid crystals for organic thin-film transistors.

PubMed

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-ichi

2015-04-10

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm(2) V(-1) s(-1)) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

Liquid crystals for organic thin-film transistors

NASA Astrophysics Data System (ADS)

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

2015-04-01

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

Visible light assisted photoelectrocatalytic degradation of sugarcane factory wastewater by sprayed CZTS thin films

NASA Astrophysics Data System (ADS)

Hunge, Y. M.; Mahadik, M. A.; Patil, V. L.; Pawar, A. R.; Gadakh, S. R.; Moholkar, A. V.; Patil, P. S.; Bhosale, C. H.

2017-12-01

Highly crystalline Cu2ZnSnS4 (CZTS) thin films have been deposited onto glass and FTO coated glass substrates by simple chemical spray-pyrolysis technique. It is an important material for solar energy conversion through the both photovoltaics and photocatalysis. The effect of substrate temperatures on the physico-chemical properties of the CZTS films is studied. The XRD study shows the formation of single phase CZTS with kesterite structure. FE-SEM analysis reveals nano flakes architecture with pin-hole and crake free surface with more adherent. The film deposited at optimized substrate temperature exhibits optical band gap energy of 1.90 eV, which lies in the visible region of the solar spectrum and useful for photocatalysis application. The photoelectrocatalytic activities of the large surface area (10 × 10 cm2) deposited CZTS thin film photocatalysts were evaluated for the degradation of sugarcane factory wastewater under visible light irradiation. The results show that the CZTS thin film photocatalyst exhibited about 90% degradation of sugar cane factory wastewater. The mineralization of sugarcane factory wastewater is studied by measuring chemical oxygen demand (COD) values.

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Insight into the epitaxial encapsulation of Pd catalysts in an oriented metalloporphyrin network thin film for tandem catalysis.

PubMed

Vohra, M Ismail; Li, De-Jing; Gu, Zhi-Gang; Zhang, Jian

2017-06-14

A palladium catalyst (Pd-Cs) encapsulated metalloporphyrin network PIZA-1 thin film with bifunctional properties has been developed through a modified epitaxial layer-by-layer encapsulation approach. Combining the oxidation activity of Pd-Cs and the acetalization activity of the Lewis acidic sites in the PIZA-1 thin film, this bifunctional catalyst of the Pd-Cs@PIZA-1 thin film exhibits a good catalytic activity in a one-pot tandem oxidation-acetalization reaction. Furthermore, the surface components can be controlled by ending the top layer with different precursors in the thin film preparation procedures. The catalytic performances of these thin films with different surface composites were studied under the same conditions, which showed different reaction conversions. The result revealed that the surface component can influence the catalytic performance of the thin films. This epitaxial encapsulation offers a good understanding of the tandem catalysis for thin film materials and provides useful guidance to develop new thin film materials with catalytic properties.

Pronounced pre-martensitic anomaly in the magnetization on Ni2MnGa thin films

NASA Astrophysics Data System (ADS)

Neckel, I. T.; Müller, C.; Nobrega, K. Z.; Dartora, C. A.; Schreiner, W. H.; Mosca, D. H.

2018-05-01

We have prepared [110]-textured Ni2MnGa thin films exhibiting an unusual pre-martensitic transition accompanied by an extremely large magnetization change. The thin films were grown by molecular beam epitaxy directly on epi-ready GaAs(111)B. Crystalline structure was investigated in situ by reflection high-energy electron diffraction (RHEED) and ex situ by x-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the film exhibits cubic crystalline structure (L2 1) at room temperature with lattice parameter a = 5.88 Å which undergoes martensitic transition. Magnetic characterization shows ferromagnetic behavior at room temperature with Curie temperature higher than room temperature. Martensitic transformation occurs at TM ∼ 185 K. A phenomenological model based on Landau theory of phase transformation was developed to explain the anomalous pre-martensitic transition at ∼285 K.

Positron annihilation and X-ray diffraction studies on tin oxide thin films

NASA Astrophysics Data System (ADS)

Prabakar, K.; Abhaya, S.; Krishnan, R.; Kalavathi, S.; Dash, S.; Jayapandian, J.; Amarendra, G.

2009-04-01

Positron annihilation spectroscopy along with glancing incidence X-ray diffraction have been used to investigate tin oxide thin films grown on Si by pulsed laser deposition. The films were prepared at room temperature and at 670 K under oxygen partial pressure. As-grown samples are amorphous and are found to contain large concentration of open volume sites (vacancy defects). Post-deposition annealing of as-grown samples at 970 K is found to drastically reduce the number of open volume sites and the film becomes crystalline. However, film grown under elevated temperature and under partial pressure of oxygen is found to exhibit a lower S-parameter, indicating lower defect concentration. Based on the analysis of experimental positron annihilation results, the defect-sensitive S-parameter and the overlayer thickness of tin oxide thin films are deduced. S- W correlation plots exhibit distinct positron trapping defect states in three samples.

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

NASA Astrophysics Data System (ADS)

Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

2015-04-01

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

Large magnetization and high Curie temperature in highly disordered nanoscale Fe2CrAl thin films

NASA Astrophysics Data System (ADS)

Dulal, Rajendra P.; Dahal, Bishnu R.; Forbes, Andrew; Pegg, Ian L.; Philip, John

2017-02-01

We have successfully grown nanoscale Fe2CrAl thin films on polished Si/SiO2 substrates using an ultra-high vacuum deposition with a base pressure of 9×10-10 Torr. The thickness of thin films ranges from 30 to 100 nm. These films exhibit cubic crystal structure with lattice disorder and display ferromagnetic behavior. The Curie temperature is greater than 400 K, which is much higher than that reported for bulk Fe2CrAl. The magnetic moments of the films varies from 2.5 to 2.8 μB per formula unit, which is larger than the reported bulk values. Thus, the disordered nanoscale Fe2CrAl films exhibit strong Fe-Fe exchange interactions through Fe-Cr-Fe and Fe-Al-Fe layers, resulting in both a large magnetization and a high Curie temperature.

Channel layer thickness dependence of In-Ti-Zn-O thin-film transistors fabricated using pulsed laser deposition

NASA Astrophysics Data System (ADS)

Zhang, Q.; Shan, F. K.; Liu, G. X.; Liu, A.; Lee, W. J.; Shin, B. C.

2014-05-01

Amorphous indium-titanium-zinc-oxide (ITZO) thin-film transistors (TFTs) with various channel thicknesses were fabricated at room temperature by using pulsed laser deposition. The channel layer thickness (CLT) dependence of the TFTs was investigated. All the ITZO thin films were amorphous, and the surface roughnesses decreased slightly first and then increased with increasing CLT. With increasing CLT from 35 to 140 nm, the on/off current ratio and the field-effect mobility increased, and the subthreshold swing decreased. The TFT with a CLT of 210 nm exhibited the worst performance, while the ITZO TFT with a CLT of 140 nm exhibited the best performance with a subthreshold voltage of 2.86 V, a mobility of 53.9 cm2V-1s-1, a subthreshold swing of 0.29 V/decade and an on/off current ratio of 109.

A comparison of cirrus clouds determined by ISCCP and SAGE-II and their relation to convection in the tropics

NASA Technical Reports Server (NTRS)

Christopher, Sundar A.; Vonder Haar, Thomas H.

1992-01-01

Results of tropical thin cirrus cloud retrievals using International Satellite Cloud Climatology Project (ISCCP) and Stratospheric Aerosol and Gaseous Experiment (SAGE-II) data from January 1985 are presented. A preliminary analysis of the results shows that thin cirrus increases with increasing height in both data sets, and SAGE-II exhibits a high frequency of occurrence. The thin cirrus extinction coefficient shows maxima around the convective regions of South America and the western Pacific Ocean.

Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt.

PubMed

Zou, Xingli; Ji, Li; Yang, Xiao; Lim, Taeho; Yu, Edward T; Bard, Allen J

2017-11-15

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

Microstructural study of the polymorphic transformation in pentacene thin films.

PubMed

Murakami, Yosuke; Tomiya, Shigetaka; Koshitani, Naoki; Kudo, Yoshihiro; Satori, Kotaro; Itabashi, Masao; Kobayashi, Norihito; Nomoto, Kazumasa

2009-10-02

We have observed, by high-resolution cross-sectional transmission electron microscopy, the first direct evidence of polymorphic transformation in pentacene thin films deposited on silicon oxide substrates. Polymorphic transformation from the thin-film phase to the bulk phase occurred preferentially near polycrystalline grain boundaries, which exhibit concave surfaces. This process is thought to be driven by compressive stress caused by the grain boundaries. In addition to this stress, lattice mismatch between the two phases also results in structural defect formation.

Architecture of kangaroo rat inner medulla: segmentation of descending thin limb of Henle's loop.

PubMed

Urity, Vinoo B; Issaian, Tadeh; Braun, Eldon J; Dantzler, William H; Pannabecker, Thomas L

2012-03-15

We hypothesize that the inner medulla of the kangaroo rat Dipodomys merriami, a desert rodent that concentrates its urine to more than 6,000 mosmol/kgH(2)O water, provides unique examples of architectural features necessary for production of highly concentrated urine. To investigate this architecture, inner medullary nephron segments in the initial 3,000 μm below the outer medulla were assessed with digital reconstructions from physical tissue sections. Descending thin limbs of Henle (DTLs), ascending thin limbs of Henle (ATLs), and collecting ducts (CDs) were identified by immunofluorescence using antibodies that label segment-specific proteins associated with transepithelial water flux (aquaporin 1 and 2, AQP1 and AQP2) and chloride flux (the chloride channel ClC-K1); all tubules and vessels were labeled with wheat germ agglutinin. In the outer 3,000 μm of the inner medulla, AQP1-positive DTLs lie at the periphery of groups of CDs. ATLs lie inside and outside the groups of CDs. Immunohistochemistry and reconstructions of loops that form their bends in the outer 3,000 μm of the inner medulla show that, relative to loop length, the AQP1-positive segment of the kangaroo rat is significantly longer than that of the Munich-Wistar rat. The length of ClC-K1 expression in the prebend region at the terminal end of the descending side of the loop in kangaroo rat is about 50% shorter than that of the Munich-Wistar rat. Tubular fluid of the kangaroo rat DTL may approach osmotic equilibrium with interstitial fluid by water reabsorption along a relatively longer tubule length, compared with Munich-Wistar rat. A relatively shorter-length prebend segment may promote a steeper reabsorptive driving force at the loop bend. These structural features predict functionality that is potentially significant in the production of a high urine osmolality in the kangaroo rat.

Effects of thinning on drought vulnerability and climate response in north temperate forest ecosystems

USGS Publications Warehouse

D’Amato, Anthony W.; Bradford, John B.; Fraver, Shawn; Palik, Brian J.

2013-01-01

Reducing tree densities through silvicultural thinning has been widely advocated as a strategy for enhancing resistance and resilience to drought, yet few empirical evaluations of this approach exist. We examined detailed dendrochronological data from a long-term (>50 yrs) replicated thinning experiment to determine if density reductions conferred greater resistance and/or resilience to droughts, assessed by the magnitude of stand-level growth reductions. Our results suggest that thinning generally enhanced drought resistance and resilience; however, this relationship showed a pronounced reversal over time in stands maintained at lower tree densities. Specifically, lower-density stands exhibited greater resistance and resilience at younger ages (49 years), yet exhibited lower resistance and resilience at older ages (76 years), relative to higher-density stands. We attribute this reversal to significantly greater tree sizes attained within the lower-density stands through stand development, which in turn increased tree-level water demand during the later droughts. Results from response-function analyses indicate that thinning altered growth-climate relationships, such that higher-density stands were more sensitive to growing-season precipitation relative to lower-density stands. These results confirm the potential of density management to moderate drought impacts on growth, and they highlight the importance of accounting for stand structure when predicting climate-change impacts to forest systems.

Effects of thinning on drought vulnerability and climate response in north temperate forest ecosystems.

PubMed

D'Amato, Anthony W; Bradford, John B; Fraver, Shawn; Palik, Brian J

2013-12-01

Reducing tree densities through silvicultural thinning has been widely advocated as a strategy for enhancing resistance and resilience to drought, yet few empirical evaluations of this approach exist. We examined detailed dendrochronological data from a long-term (> 50 years) replicated thinning experiment to determine if density reductions conferred greater resistance and/or resilience to droughts, assessed by the magnitude of stand-level growth reductions. Our results suggest that thinning generally enhanced drought resistance and resilience; however, this relationship showed a pronounced reversal over time in stands maintained at lower tree densities. Specifically, lower-density stands exhibited greater resistance and resilience at younger ages (49 years), yet exhibited lower resistance and resilience at older ages (76 years), relative to higher-density stands. We attribute this reversal to significantly greater tree sizes attained within the lower-density stands through stand development, which in turn increased tree-level water demand during the later droughts. Results from response-function analyses indicate that thinning altered growth-climate relationships, such that higher-density stands were more sensitive to growing-season precipitation relative to lower-density stands. These results confirm the potential of density management to moderate drought impacts on growth, and they highlight the importance of accounting for stand structure when predicting climate-change impacts to forests.

Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Çorlu, Tugba; Karaduman, Irmak; Yildirim, Memet Ali; Ateş, Aytunç; Acar, Selim

2017-07-01

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal—insulator phase transition properties

NASA Astrophysics Data System (ADS)

Liang, Ji-Ran; Wu, Mai-Jun; Hu, Ming; Liu, Jian; Zhu, Nai-Wei; Xia, Xiao-Xu; Chen, Hong-Da

2014-07-01

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal—insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (1¯11) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal—insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal—insulator transition.

Antimicrobial activity of biopolymer-antibiotic thin films fabricated by advanced pulsed laser methods

NASA Astrophysics Data System (ADS)

Cristescu, R.; Popescu, C.; Dorcioman, G.; Miroiu, F. M.; Socol, G.; Mihailescu, I. N.; Gittard, S. D.; Miller, P. R.; Narayan, R. J.; Enculescu, M.; Chrisey, D. B.

2013-08-01

We report on thin film deposition by matrix assisted pulsed laser evaporation (MAPLE) of two polymer-drug composite thin film systems. A pulsed KrF* excimer laser source (λ = 248 nm, τ = 25 ns, ν = 10 Hz) was used to deposit composite thin films of poly(D,L-lactide) (PDLLA) containing several gentamicin concentrations. FTIR spectroscopy was used to demonstrate that MAPLE-transferred materials exhibited chemical structures similar to those of drop cast materials. Scanning electron microscopy data indicated that MAPLE may be used to fabricate thin films of good morphological quality. The activity of PDLLA-gentamicin composite thin films against Staphylococcus aureus bacteria was demonstrated using drop testing. The influence of drug concentration on microbial viability was also assessed. Our studies indicate that polymer-drug composite thin films prepared by MAPLE may be used to impart antimicrobial activity to implants, medical devices, and other contact surfaces.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics.

PubMed

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-25

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS 2 ) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS 2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS 2 thin film by annealing at 450 °C for 1 h in H 2 S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS 2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 10 5 and 10 4 cm -1 in the visible region, respectively. In addition, SnS and SnS 2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS 2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS 2 thin films exhibited on-off drain current ratios of 8.8 and 2.1 × 10 3 and mobilities of 0.21 and 0.014 cm 2 V -1 s -1 , respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS 2 thin films were 6.0 × 10 16 and 8.7 × 10 13 cm -3 , respectively, in this experiment.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

NASA Astrophysics Data System (ADS)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Electroelastic fields in artificially created vortex cores in epitaxial BiFeO 3 thin films

DOE PAGES

Winchester, Ben; Wisinger, Nina Balke; Cheng, X. X.; ...

2015-08-03

Here we employ phase-field modeling to explore the elastic properties of artificially created 1-D domain walls in (001) p-oriented BiFeO 3 thin films, composed of a junction of the four polarization variants, all with the same out-of-plane polarization. It was found that these junctions exhibit peculiarly high electroelastic fields induced by the neighboring ferroelastic/ferroelectric domains. The vortex core exhibits a volume expansion, while the anti-vortex core is more compressive. We also discuss possible ways to control the electroelastic field, such as varying material constant and applying transverse electric field.

Photodeposition of Thin Polydiacetylene Films from Solution that Exhibit Large Third-Order Optical Nonlinearities

NASA Technical Reports Server (NTRS)

Paley, M. S.; Frazier, D. O.; Abdeldayem, H.; McManus, S. P.

1994-01-01

One promising class of organic compounds for applications in the field of nonlinear optics (NLO) are polydiacetylenes, which are of interest because they are highly conjugated polymers capable of exhibiting very large optical nonlinearities with fast response times. During the course of crystal growth studies in anticipation of a space experiment, we discovered a novel, simple method for the formation of polydiacetylene thin films by photodeposition from monomer solutions onto quartz or glass substrates. Characterization of these PDAMNA films is not trivial; they are not soluble in common organic solvents, which makes the standard solution-based methods of polymer analysis useless.

Benzothienobenzothiophene-based conjugated oligomers as semiconductors for stable organic thin-film transistors.

PubMed

Yu, Han; Li, Weili; Tian, Hongkun; Wang, Haibo; Yan, Donghang; Zhang, Jingping; Geng, Yanhou; Wang, Fosong

2014-04-09

Two benzothienobenzothiophene (BTBT)-based conjugated oligomers, i.e., 2,2'-bi[1]benzothieno[3,2-b][1]benzothiophene (1) and 5,5'-bis([1]benzothieno[3,2-b][1]benzothiophen-2-yl)-2,2'-bithiophene (2), were prepared and characterized. Both oligomers exhibit excellent thermal stability, with 5% weight-loss temperatures (T(L)) above 370 °C; no phase transition was observed before decomposition. The highest occupied molecular orbital (HOMO) levels of 1 and 2 are -5.3 and -4.9 eV, respectively, as measured by ultraviolet photoelectron spectroscopy. Thin-film X-ray diffraction and atomic force microscopy characterizations indicate that both oligomers form highly crystalline films with large domain sizes on octadecyltrimethoxysilane-modified substrates. Organic thin-film transistors with top-contact and bottom-gate geometry based on 1 and 2 exhibited mobilities up to 2.12 cm(2)/V·s for 1 and 1.39 cm(2)/V·s for 2 in an ambient atmosphere. 1-based devices exhibited great air and thermal stabilities, as evidenced by the slight performance degradation after 2 months of storage under ambient conditions and after thermal annealing at temperatures below 250 °C.

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Lekang; Li, Chunbo

2016-03-01

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Paper-based transparent flexible thin film supercapacitors.

PubMed

Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

2013-06-21

Paper-based transparent flexible thin film supercapacitors were fabricated using CNF-[RGO]n hybrid paper as an electrode material and charge collector. Owing to the self-anti-stacking of distorted RGO nanosheets and internal electrolyte nanoscale-reservoirs, the device exhibited good electrochemical performance (about 1.73 mF cm(-2)), and a transmittance of about 56% (at 550 nm).

Third order nonlinearity in pulsed laser deposited LiNbO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tumuluri, Anil; Rapolu, Mounika; Rao, S. Venugopal, E-mail: kcjrsp@uohyd.ernet.in, E-mail: svrsp@uohyd.ernet.in

2016-05-06

Lithium niobate (LiNbO{sub 3}) thin films were prepared using pulsed laser deposition technique. Structural properties of the same were examined from XRD and optical band gap of the thin films were measured from transmittance spectra recorded using UV-Visible spectrophotometer. Nonlinear optical properties of the thin films were recorded using Z-Scan technique. The films were exhibiting third order nonlinearity and their corresponding two photon absorption, nonlinear refractive index, real and imaginary part of nonlinear susceptibility were calculated from open aperture and closed aperture transmission curves. From these studies, it suggests that these films have potential applications in nonlinear optical devices.

Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

PubMed

Patton, Ryan J; Wood, Michael G; Reano, Ronald M

2017-11-01

We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

DOEpatents

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Far infrared filters for the Galileo-Jupiter and other missions

NASA Technical Reports Server (NTRS)

Seeley, J. S.; Hunneman, R.; Whatley, A.

1981-01-01

Progress in the development of FIR multilayer interference filters for the net flux radiometer and photopolarizing radiometer to be carried on board the Galileo mission to Jupiter is reported. The multilayer interference technique has been extended to the region above 40 microns by the use of PbTe/II-VI materials in hard-coated combination, with the thickest layers composed of CdSe QWOT at 74 microns and PbTe QWOT. Improvements have also been obtained in filters below 20 microns on the basis of the Chebyshev stack design. A composite filter cutting on steeply at 40 microns has been designed which employs a thin crystal quartz substrate, shorter wavelength absorption in ZnS and As2S3 thin films, and supplementary multilayer interference. Finally, absorptive filters have been developed based on II-VI compounds in multilayer combination with KRS-5 (or 6) on a KRS-5 (or 6) substrate

An Atomic Lens Using a Focusing Hollow Beam

NASA Astrophysics Data System (ADS)

Xia, Yong; Yin, Jian-Ping; Wang, Yu-Zhu

2003-05-01

We propose a new method to generate a focused hollow laser beam by using an azimuthally distributed 2pi-phase plate and a convergent thin lens, and calculate the intensity distribution of the focused hollow beam in free propagation space. The relationship between the waist wo of the incident collimated Gaussian beam and the dark spot size of the focused hollow beam at the focal point, and the relationship between the focal length f of the thin lens and the dark spot size are studied respectively. The optical potential of the blue-detuned focused hollow beam for 85Rb atoms is calculated. Our study shows that when the larger waist w of the incident Gaussian beam and the shorter focal length f of the lens are chosen, we can obtain an extremely small dark spot size of the focused hollow beam, which can be used to form an atomic lens with a resolution of several angstroms.

Controlling nested wrinkle morphology through the boundary effect on narrow-band thin films

NASA Astrophysics Data System (ADS)

Xu, Hanyang; Shi, Tielin; Liao, Guanglan; Xia, Qi

2017-07-01

We describe the formation of nested wrinkles created by the thermal mismatch between a narrow-band thin film and a compliant substrate. When a film is described as "narrow-band", it literally means that the film band width is much shorter than its length; more precisely, it means that the width is comparable with the wavelength of the wrinkles. A silicon mask was used during film sputtering to create narrow-band films on poly (dimethylsiloxane) substrate, thus creating regular boundaries to steer local stresses and control wrinkle morphology. Disordered nano-scale wrinkles were found nested within highly ordered micro-scale sinusoidal wrinkles. The formation of nested wrinkles was explained through the amplitude and wavelength saturation of nano-scale wrinkles. The disordered morphology of nano-scale wrinkles and the highly ordered morphology of micro-scale wrinkles were explained by using the boundary effect.

Light self-focusing in the atmosphere: Thin window model

DOE PAGES

Vaseva, Irina A.; Fedoruk, Mikhail P.; Rubenchik, Alexander M.; ...

2016-08-02

Ultra-high power (exceeding the self-focusing threshold by more than three orders of magnitude) light beams from ground-based laser systems may find applications in space-debris cleaning. The propagation of such powerful laser beams through the atmosphere reveals many novel interesting features compared to traditional light self-focusing. It is demonstrated here that for the relevant laser parameters, when the thickness of the atmosphere is much shorter than the focusing length (that is, of the orbit scale), the beam transit through the atmosphere in lowest order produces phase distortion only. This means that by using adaptive optics it may be possible to eliminatemore » the impact of self-focusing in the atmosphere on the laser beam. Furthermore, the area of applicability of the proposed “thin window” model is broader than the specific physical problem considered here. For instance, it might find applications in femtosecond laser material processing.« less

Atomic-scale visualization of oxide thin-film surfaces.

PubMed

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

2018-01-01

The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

PubMed

Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

2016-12-21

To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu 2 ZnSnS 4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g -1 even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm 2 utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO 2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

NASA Astrophysics Data System (ADS)

Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

2013-03-01

In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

Vertical pillar-superlattice array and graphene hybrid light emitting diodes.

PubMed

Lee, Jung Min; Choung, Jae Woong; Yi, Jaeseok; Lee, Dong Hyun; Samal, Monica; Yi, Dong Kee; Lee, Chul-Ho; Yi, Gyu-Chul; Paik, Ungyu; Rogers, John A; Park, Won Il

2010-08-11

We report a type of device that combines vertical arrays of one-dimensional (1D) pillar-superlattice (PSL) structures with 2D graphene sheets to yield a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics. In this application, graphene sheets coated with very thin metal layers exhibit good mechanical and electrical properties and an ability to mount, in a freely suspended configuration, on the PSL arrays as a top window electrode. Optical characterization demonstrates that graphene exhibits excellent optical transparency even after deposition of the thin metal films. Thermal annealing of the graphene/metal (Gr/M) contact to the GaAs decreases the contact resistance, to provide enhanced carrier injection. The resulting PSL-Gr/M LEDs exhibit bright light emission over large areas. The result suggests the utility of graphene-based materials as electrodes in devices with unusual, nonplanar 3D architectures.

Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

DOE PAGES

Craciun, D.; Socol, G.; Lambers, E.; ...

2015-01-17

Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH 4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH 4 pressures exhibited slightly higher nanohardness and Young modulus values than filmsmore » deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

Compliant Electrode and Composite Material for Piezoelectric Wind and Mechanical Energy Conversions

NASA Technical Reports Server (NTRS)

Chen, Bin (Inventor)

2015-01-01

A thin film device for harvesting energy from wind. The thin film device includes one or more layers of a compliant piezoelectric material formed from a composite of a polymer and an inorganic material, such as a ceramic. Electrodes are disposed on a first side and a second side of the piezoelectric material. The electrodes are formed from a compliant material, such as carbon nanotubes or graphene. The thin film device exhibits improved resistance to structural fatigue upon application of large strains and repeated cyclic loadings.

Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

NASA Astrophysics Data System (ADS)

Seo, Jeongdae; Ahn, Yoonho; Son, Jong Yeog

2016-01-01

Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2. Large leakage current was observed by I- V curve and ferroelectric hysteresis loop. The YCrO3 resistive random access memory (RRAM) capacitor showed unipolar switching behaviors with SET and RESET voltages higher than those of general NiO RRAM capacitors. [Figure not available: see fulltext.

Development of a stand density index equation for slash pine stands

Treesearch

Paul F. Doruska

2002-01-01

Stand density index (SDI) is commonly used as the basis for density management guides for even-aged forest stands. Many tree species follow the same self-thinning trajectory, allowing for the use of stand density index in such guides. Slash pine (Pinus elliottii Englem.) has been shown to depart from the self-thinning trajectory exhibited by other...

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thinmore » films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Optical, electrical, and photovoltaic properties of PbS thin films by anionic and cationic dopants

NASA Astrophysics Data System (ADS)

Cheraghizade, Mohsen; Jamali-Sheini, Farid; Yousefi, Ramin

2017-06-01

Lead sulfide (PbS) thin films were deposited by CVD method to examine the effects of anionic and cationic dopants on optical and electrical properties for photovoltaic applications. XRD diffractograms verified the formation of cubic phase of multicrystalline PbS thin films. FESEM images showed surface morphologies in nano-dimensions (rods and flowers). UV-Vis-NIR spectrum revealed absorbance in the visible and NIR regions for all samples, in which dopants decreased the intensity of absorbance. Se as an anionic dopant for PbS thin films increased electrical resistance, acceptor concentrations, and crystallite defects, and decreased flat-band voltage and depletion width. Finally, photovoltaic measurements indicated that Zn-doped PbS thin film, as a photovoltaic cell, exhibited higher conversion efficiency and external quantum efficiency (EQE).

Aging behavior of near atmospheric N2 ambient sputtered/patterned Au IR absorber thin films

NASA Astrophysics Data System (ADS)

Gaur, Surender P.; Kothari, Prateek; Rangra, Kamaljit; Kumar, Dinesh

2018-03-01

Near atmospheric N2 ambient sputtered Au thin films exhibit significant spectral absorptivity over medium to long wave infrared radiations. Thin films were found adequately robust for micropatterning using conventional photolithography and metal lift off processes. Since long term spectral absorptivity is major practical concern for Au blacks, this paper reports on aging behavior of near atmospheric Ar and Ar + N2 (1:1) ambient sputtered infrared absorber Au thin films. Comparative analysis on electrical, morphological and spectral absorption behavior of twenty-five weeks room temperature/vacuum aged Au infrared absorber thin films is performed. The Ar and Ar + N2 ambient sputtered Au thing films have shown anticipated consistency in their physical, electrical and spectral properties regardless the long term aging in this work.

Supramolecular structures and assembly and luminescent properties of quinacridone derivatives.

PubMed

Ye, Kaiqi; Wang, Jia; Sun, Hui; Liu, Yu; Mu, Zhongcheng; Li, Fei; Jiang, Shimei; Zhang, Jingying; Zhang, Hongxing; Wang, Yue; Che, Chi-Ming

2005-04-28

The synthesis and single-crystal X-ray structures of two quinacridone derivatives, N,N'-di(n-butyl)quinacridone (1) and N,N'-di(n-butyl)-1,3,8,10-tetramethylquinacridone (2), are reported, and the 1H NMR, absorption, photoluminescent (PL), and electroluminescent (EL) characteristics are presented. Both these crystal structures are characterized by intermolecular pi...pi and hydrogen bonding interactions. The intermolecular pi...pi interactions lead to the formation of molecular columns in the solids of 1 and 2, and the interplanar contact distances between two adjacent molecules are 3.48 and 3.55 angstroms, respectively. Crystals of 1 display shorter intermolecular pi...pi contacts and higher density than 2. These results suggest that tighter intermolecular interactions exist in 1. The 1H NMR, absorption, and PL spectra of 1 and 2 in solutions exhibit concentration-dependent properties. The PL quantum yields of 1 in solutions decrease more quickly with the increase of concentration compared to that of 2 in solutions. For solid thin films of Alq3:1 (Alq3 = tris(8-hydroxyquinolinato)aluminum), emission intensities dramatically decrease and obvious red shifts are observed when the dopant concentration is above 4.2%, while for films of Alq3:2, a similar phenomenon occurs when the concentration is above 6.7%. EL devices with Alq3:1 as emitting layer only show high efficiencies (20.3-14.5 cd/A) within the narrow dopant concentration range of 0.5-1.0%. In contrast, high efficiencies (21.5-12.0 cd/A) are achieved for a wider dopant concentration range of 0.5-5.0% when Alq3:2 films are employed as emitting layer. The different PL and EL concentration-dependent properties of the solid thin films Alq3:1 and Alq3:2 are attributed to their different molecular packing characteristics in the solid state.

High resistance to thermal decomposition in brown cotton is linked to tannis and sodium content

USDA-ARS?s Scientific Manuscript database

Brown cotton (Gossypium hirsutum L.) fibers (SA-1 and MC-BL) studied were inferior to white cotton fiber Sure-Grow 747 (SG747) in fiber quality, i.e., shorter length, fewer twists, and lower crystallinity, but exhibited superior thermal properties in thermogravimetry (TG), differential thermogravime...

Biochemical characterization of RecA variants that contribute to extreme resistance to ionizing radiation

PubMed Central

Piechura, Joseph R.; Tseng, Tzu-Ling; Hsu, Hsin-Fang; Byrne, Rose T.; Windgassen, Tricia A.; Chitteni-Pattu, Sindhu; Battista, John R.; Li, Hung-Wen; Cox, Michael M.

2015-01-01

Among strains of Escherichia coli that have evolved to survive extreme exposure to ionizing radiation, mutations in the recA gene are prominent and contribute substantially to the acquired phenotype. Changes at amino acid residue 276, D276A and D276N, occur repeatedly and in separate evolved populations. RecA D276A and RecA D276N exhibit unique adaptations to an environment that can require the repair of hundreds of double strand breaks. These two RecA protein variants (a) exhibit a faster rate of filament nucleation on DNA, as well as a slower extension under at least some conditions, leading potentially to a distribution of the protein among a higher number of shorter filaments, (b) promote DNA strand exchange more efficiently in the context of a shorter filament, and (c) are markedly less inhibited by ADP. These adaptations potentially allow RecA protein to address larger numbers of double strand DNA breaks in an environment where ADP concentrations are higher due to a compromised cellular metabolism. PMID:25559557

Fabrication and characterization of optical sensors using metallic core-shell thin film nanoislands for ozone detection

NASA Astrophysics Data System (ADS)

Addanki, Satish; Nedumaran, D.

2017-07-01

Core-Shell nanostructures play a vital role in the sensor field owing to their performance improvements in sensing characteristics and well-established synthesis procedures. These nanostructures can be ingeniously tuned to achieve tailored properties for a particular application of interest. In this work, an Ag-Au core-shell thin film nanoislands with APTMS (3-Aminopropyl trimethoxysilane) and PVA (Polyvinyl alcohol) binding agents was modeled, synthesized and characterized. The simulation results were used to fabricate the sensor through chemical route. The results of this study confirmed that the APTMS based Ag-Au core-shell thin film nanoislands offered a better performance over the PVA based Ag-Au core-shell thin film nanoislands. Also, the APTMS based Ag-Au core-shell thin film nanoislands exhibited better sensitivity towards ozone sensing over the other types, viz., APTMS/PVA based Au-Ag core-shell and standalone Au/Ag thin film nanoislands.

Ultra-smooth glassy graphene thin films for flexible transparent circuits

PubMed Central

Dai, Xiao; Wu, Jiang; Qian, Zhicheng; Wang, Haiyan; Jian, Jie; Cao, Yingjie; Rummeli, Mark H.; Yi, Qinghua; Liu, Huiyun; Zou, Guifu

2016-01-01

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits. PMID:28138535

Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

NASA Astrophysics Data System (ADS)

Sun, Y.; Ashida, K.; Sasaki, S.; Koyama, M.; Maemoto, T.; Sasa, S.; Kasai, S.; Iñiguez-de-la-Torre, I.; González, T.

2015-10-01

Fully transparent zinc oxide (ZnO) based thin-film transistors (TFTs) and a new type of rectifiers calls self-switching nano-diodes (SSDs) were fabricated on glass substrates at room temperature by using low resistivity and transparent conducting Al- doped ZnO (AZO) thin-films. The deposition conditions of AZO thin-films were optimized with pulsed laser deposition (PLD). AZO thin-films on glass substrates were characterized and the transparency of 80% and resistivity with 1.6*10-3 Ωcm were obtained of 50 nm thickness. Transparent ZnO-TFTs were fabricated on glass substrates by using AZO thin-films as electrodes. A ZnO-TFT with 2 μm long gate device exhibits a transconductance of 400 μS/mm and an ON/OFF ratio of 2.8*107. Transparent ZnO-SSDs were also fabricated by using ZnO based materials and clear diode-like characteristics were observed.

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

NASA Astrophysics Data System (ADS)

Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.

2009-11-01

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

Performance analyses of Schottky diodes with Au/Pd contacts on n-ZnO thin films as UV detectors

NASA Astrophysics Data System (ADS)

Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar

2017-12-01

In this paper, we report fabrication and performance analyses of UV detectors based on ZnO thin film Schottky diodes with Au and Pd contacts. RF magnetron sputtering technique has been used to deposit the nano-crystalline ZnO thin film, at room temperature. Characterization techniques such as XRD, AFM and SEM provided valuable information related to the micro-structural & optical properties of the thin film. The results show that the prepared thin film has good crystalline orientation and minimal surface roughness, with an optical bandgap of 3.1 eV. I-V and C-V characteristics were evaluated that indicate non-linear behaviour of the diodes with rectification ratios (IF/IR) of 19 and 427, at ± 4 V, for Au/ZnO and Pd/ZnO Schottky diodes, respectively. The fabricated Schottky diodes when exposed to a UV light of 365 nm wavelength, at an applied bias of -2 V, exhibited responsivity of 10.16 and 22.7 A/W, for Au and Pd Schottky contacts, respectively. The Pd based Schottky photo-detectors were found to exhibit better performance with superior values of detectivity and photoconductive gain of 1.95 × 1010 cm Hz0.5/W & 77.18, over those obtained for the Au based detectors which were observed to be 1.23 × 1010 cm Hz0.5/W & 34.5, respectively.

Origin of the Strain Sensitivity for an Organic Heptazole Thin-Film and Its Strain Gauge Application

NASA Astrophysics Data System (ADS)

Bae, Heesun; Jeon, Pyo Jin; Park, Ji Hoon; Lee, Kimoon

2018-04-01

The authors report on the origin of the strain sensitivity for an organic C26H16N2 (heptazole) thinfilm and its application for the detection of tensile strain. From the electrical characterization on the thin-film transistor adopting a heptazole channel, heptazole film exhibits p-channel conduction with a relatively low value of field-effect mobility (0.05 cm2/Vs), suggesting a hopping conduction behavior via hole carriers. By analyzing the strain and temperature dependences of the electrical conductivity, we reveal that the electrical conduction for a heptazole thin-film is dominated by the variable range hopping process with quite a large energy separation (224.9 meV) between the localized states under a relatively long attenuation length (10.46 Å). This indicates that a change in the inter-grain spacing that is much larger than the attenuation length is responsible for the reversible modification of electrical conductivity depending on strain for the heptazole film. By utilizing our heptazole thin-film both as a strain sensitive passive resistor and an active semiconducting channel layer, we can achieve a strain gauge device exhibiting reversible endurance for tensile strains up to 2.12%. Consequently, this study advances the understanding of the fundamental strain sensing mechanism in a heptazole thin-film toward finding a promise material with a strain gauge for applications as potential flexible devices and/or wearable electronics.

Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films

PubMed Central

Oka, Daichi; Hirose, Yasushi; Kamisaka, Hideyuki; Fukumura, Tomoteru; Sasa, Kimikazu; Ishii, Satoshi; Matsuzaki, Hiroyuki; Sato, Yukio; Ikuhara, Yuichi; Hasegawa, Tetsuya

2014-01-01

Compressively strained SrTaO2N thin films were epitaxially grown on SrTiO3 substrates using nitrogen plasma-assisted pulsed laser deposition. Piezoresponse force microscopy measurements revealed small domains (101–102 nm) that exhibited classical ferroelectricity, a behaviour not previously observed in perovskite oxynitrides. The surrounding matrix region exhibited relaxor ferroelectric-like behaviour, with remanent polarisation invoked by domain poling. First-principles calculations suggested that the small domains and the surrounding matrix had trans-type and a cis-type anion arrangements, respectively. These experiments demonstrate the promise of tailoring the functionality of perovskite oxynitrides by modifying the anion arrangements by using epitaxial strain.

Plasmonic tuning of gold doped thin films for layers of photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gezgin, Serap Yiğit; Kepceoğlu, Abdullah; Bayır, Sercan

2016-03-25

In order to increase the absorption rates in solar cells, increasing research activities on the plasmonic nanostructures are followed carefully. The plasmonic nanoparticles provides an important enhancement in the trapping of photons in the active layer of the solar cells by means of interaction between incident light and plasmonic nanoparticles. In order to obtain this approach, under of 5×10{sup −4} mbar and 1×10{sup −2} mbar ambient argon gas pressure, gold thin film was deposited on the silicon substrate by applying PLD system. The morphology of thin films obtained was investigated by AFM and SEM considering the effect of Ar gas pressuremore » on the plasma plume. SPR peaks for Au nanoparticles deposited under 5×10{sup −4} mbar and 1×10{sup −2} mbar Ar gas pressure were observed at 756 nm and 658 nm wavelengths respectively. It has been stated that the SPR peak in the infrared is depend on the near field interaction between Au nanoparticles. Furthermore, when the pressure is increased to 1×10{sup −2} mbar Ar, it has been observed that the SPR peak for thin film is shifted towards to shorter wavelengths, and it has also been observed that the intensity of absorption peak is decreased.« less

SILAR deposited Bi2S3 thin film towards electrochemical supercapacitor

NASA Astrophysics Data System (ADS)

Raut, Shrikant S.; Dhobale, Jyotsna A.; Sankapal, Babasaheb R.

2017-03-01

Bi2S3 thin film electrode has been synthesized by simple and low cost successive ionic layer adsorption and reaction (SILAR) method on stainless steel (SS) substrate at room temperature. The formation of interconnected nanoparticles with nanoporous surface morphology has been achieved and which is favourable to the supercapacitor applications. Electrochemical supercapacitive performance of Bi2S3 thin film electrode has been performed through cyclic voltammetry, charge-discharge and stability studies in aqueous Na2SO4 electrolyte. The Bi2S3 thin film electrode exhibits the specific capacitance of 289 Fg-1 at 5 mVs-1 scan rate in 1 M Na2SO4 electrolyte.

The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2014-08-18

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

Room temperature ammonia gas sensing properties of MoS2 nanostructured thin film

NASA Astrophysics Data System (ADS)

Sharma, Shubham; Kumar, Arvind; Kaur, Davinder

2018-05-01

Here, we have fabricated the MoS2 nanostructure thin films on the Si (100) substrate using DC magnetron sputtering technique. The MoS2 thin film sensor shows the selective responses towards the ammonia gas (NH3) under low detection range 10-500 ppm. The sensor displays a significantly high sensing response (Rg/Ra ˜2.2) towards 100 ppm ammonia gas with a very fast response and recovery time of 22 sec and 30 sec respectively. Selectivity and stability investigations exhibit the excellent sensing properties of MoS2 thin film sensor. The working principle and sensing mechanism behind their remarkable performance was also investigated in detail.

High-speed nanoscale characterization of dewetting via dynamic transmission electron microscopy

NASA Astrophysics Data System (ADS)

Hihath, Sahar; Santala, Melissa K.; Campbell, Geoffrey; van Benthem, Klaus

2016-08-01

The dewetting of thin films can occur in either the solid or the liquid state for which different mass transport mechanisms are expected to control morphological changes. Traditionally, dewetting dynamics have been examined on time scales between several seconds to hours, and length scales ranging between nanometers and millimeters. The determination of mass transport mechanisms on the nanoscale, however, requires nanoscale spatial resolution and much shorter time scales. This study reports the high-speed observation of dewetting phenomena for kinetically constrained Ni thin films on crystalline SrTiO3 substrates. Movie-mode Dynamic Transmission Electron Microscopy (DTEM) was used for high-speed image acquisition during thin film dewetting at different temperatures. DTEM imaging confirmed that the initial stages of film agglomeration include edge retraction, hole formation, and growth. Finite element modeling was used to simulate temperature distributions within the DTEM samples after laser irradiation with different energies. For pulsed laser irradiation at 18 μJ, experimentally observed hole growth suggests that Marangoni flow dominates hole formation in the liquid nickel film. After irradiation with 13.8 μJ, however, the observations suggest that dewetting was initiated by nucleation of voids followed by hole growth through solid-state surface diffusion.

Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO

NASA Astrophysics Data System (ADS)

Okada, N.; Morishita, N.; Mori, A.; Tsukada, T.; Tateishi, K.; Okamoto, K.; Tadatomo, K.

2017-04-01

Light-emitting diodes (LEDs) have been demonstrated with a thin p-type layer using the plasmonic effect. Optimal LED device operation was found when using a 20-nm-thick p+-GaN layer. Ag of different thicknesses was deposited on the thin p-type layer and annealed to form the localized Ag particles. The localized Ag particles were embedded by indium tin oxide to form a p-type electrode in the LED structure. By optimization of the plasmonic LED, the significant electroluminescence enhancement was observed when the thickness of Ag was 9.5 nm. Both upward and downward electroluminescence intensities were improved, and the external quantum efficiency was approximately double that of LEDs without the localized Ag particles. The time-resolved photoluminescence (PL) decay time for the LED with the localized Ag particles was shorter than that without the localized Ag particles. The faster PL decay time should cause the increase in internal quantum efficiency by adopting the localized Ag particles. To validate the localized surface plasmon resonance coupling effect, the absorption of the LEDs was investigated experimentally and using simulations.

Effect of laser fluence and ambient gas pressure on surface morphology and chemical composition of hydroxyapatite thin films deposited using pulsed laser deposition

NASA Astrophysics Data System (ADS)

Nishikawa, Hiroaki; Hasegawa, Tsukasa; Miyake, Akiko; Tashiro, Yuichiro; Komasa, Satoshi; Hashimoto, Yoshiya

2018-01-01

The dependence of the surface morphology and chemical composition of hydroxyapatite (HA) thin films on the laser fluence and ambient gas pressure during their formation by pulsed laser deposition was studied as the first step to investigate the effect of physical and chemical interactions between the ablated chemical species and ambient gas molecules on HA film formation. It was found that a higher fluence could decrease the number of large protrusions on the surface of HA thin films. However, too high a fluence caused a phosphorus deficiency from the stoichiometric value, particularly in the case of lower ambient gas pressure. It was also found that for lower fluences, the atomic species among the ablated chemical species were easily scattered by collision processes with ambient gas molecules. This was caused by the lower velocity of the ablated chemical species and higher ambient gas pressure, which induced a shorter mean free path. In addition, these collision processes played an important role in the adsorption, migration, and re-evaporation of the ablated chemical species on the substrate via chemical reactions.

Pulse compression of a high-power thin disk laser using rod-type fiber amplifiers.

PubMed

Saraceno, C J; Heckl, O H; Baer, C R E; Südmeyer, T; Keller, U

2011-01-17

We report on two pulse compressors for a high-power thin disk laser oscillator using rod-type fiber amplifiers. Both systems are seeded by a standard SESAM modelocked thin disk laser that delivers 16 W of average power at a repetition rate of 10.6 MHz with a pulse energy of 1.5 μJ and a pulse duration of 1 ps. We discuss two results with different fiber parameters with different trade-offs in pulse duration, average power, damage and complexity. The first amplifier setup consists of a Yb-doped fiber amplifier with a 2200 μm2 core area and a length of 55 cm, resulting in a compressed average power of 55 W with 98-fs pulses at a repetition rate of 10.6 MHz. The second system uses a shorter 36-cm fiber with a larger core area of 4500 μm2. In a stretcher-free configuration we obtained 34 W of compressed average power and 65-fs pulses. In both cases peak powers of > 30 MW were demonstrated at several μJ pulse energies. The power scaling limitations due to damage and self-focusing are discussed.

Influence of barrier absorption properties on laser patterning thin organic films

NASA Astrophysics Data System (ADS)

Naithani, Sanjeev; Mandamparambil, Rajesh; van Assche, Ferdie; Schaubroeck, David; Fledderus, Henri; Prenen, An; Van Steenberge, Geert; Vanfleteren, Jan

2012-06-01

This paper presents a study of selective ablation of thin organic films (LEP- Light Emitting Polymer, PEDOT:PSS- Poly 3,4-ethylenedioxythiophene: polystyrene sulfonate) by using 248 nm Excimer laser, on various kinds of multilayered SiN barrier foils for the development of Organic Light Emitting Diodes (OLED). Different Silicon Nitride (SiN) barrier foils with dedicated absorption spectra are taken into account for this purpose. The drive for looking into different types of SiN originates from the fact that the laser selective removal of a polymer without damage to the barrier layer underneath is challenging in the dynamic laser processing of thin films. The barrier is solely responsible for the proper encapsulation of the OLED stack. The main limitation of current OLED design is its shorter life span, which is directly related to the moisture or water permeation into the stack, leading to black spots. An optimization of laser parameters like fluence and number of shots has been carried out for the various types of SiN barrier foils. We are able to obtain a wider working process window for the selective removal of LEP and PEDOT:PSS from SiN barrier, by variation of the different types of SiN.

Engineering Defect-Free Nanoporous Pd from Optimized Pd-Ni Precursor Alloy by Understanding Palladium-Hydrogen Interactions During Dealloying

NASA Astrophysics Data System (ADS)

Schoop, Julius; Balk, T. John

2014-04-01

Thin films of nanoporous palladium (np-Pd) were produced from binary palladium-nickel (Pd-Ni) precursor alloys. A suitable precursor alloy and a method of dealloying to yield optimum nanoporosity (average pore/ligament size of 7 nm) were developed by studying the effects of various processing parameters on final microstructure. To obtain crack-free np-Pd, a 100 nm thin film of 20 at. pct Pd (80 at. pct Ni) can be dealloyed for ~5 hours in a 1 M solution of sulfuric acid, with oleic acid and oleylamine added as surfactants. Both shorter and longer dealloying times, as well as heating, inhibit the formation of crack-free np-Pd. Stress measurements at different stages of dealloying revealed that the necessary dealloying time is determined by the diffusion-controlled corrosion reaction occurring within the thin film during dealloying. Strong interaction between hydrogen and np-Pd was reflected in the stress evolution during dealloying. A mechanism is proposed for the formation of a Ni-rich dense top layer that results from H-induced swelling during initial dealloying and permits the development of defect-free np-Pd beneath, by limiting the speed of dealloying.

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films

NASA Astrophysics Data System (ADS)

Sharma, Vivek; Zhang, Yiran; Yilixiati, Subinuer

Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freely standing thin films. We distinguish nanoscopic rims, mesas and craters, and follow their emergence and growth. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), these topological features involve discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm. These non-flat features result from oscillatory, periodic, supramolecular structural forces that arise in confined fluids, and arise due to complex coupling of hydrodynamic and thermodynamic effects at the nanoscale.

Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films

NASA Astrophysics Data System (ADS)

Yilixiati, Subinuer; Zhang, Yiran; Pearsall, Collin; Sharma, Vivek

Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freestanding thin films. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm are visualized and analyzed using IDIOM protocols. We distinguish nanoscopic rims, mesas and craters and show that the non-flat features are sculpted by oscillatory, periodic, supramolecular structural forces that arise in confined fluids

Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Trilochan; Ju, Jin-Woo; Kannan, V.

2008-03-04

Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the filmmore » grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.« less

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which itsmore » resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass.

PubMed

Emmer, Hal; Chen, Christopher T; Saive, Rebecca; Friedrich, Dennis; Horie, Yu; Arbabi, Amir; Faraon, Andrei; Atwater, Harry A

2017-07-05

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17  cm -3 that exhibited mobilities as high as 16 cm 2 V -1 s -1 . Due to their unique optical properties, these films hold much promise for use in advanced optical devices.

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

DOE PAGES

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca; ...

2017-07-05

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

PubMed

Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

2015-08-10

We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

Thin metal bilayer for surface plasmon resonance sensors in a multimode plastic optical fiber: the case of palladium and gold metal films

NASA Astrophysics Data System (ADS)

Cennamo, Nunzio; Zuppella, Paola; Bacco, Davide; Corso, Alain J.; Pelizzo, Maria G.; Pesavento, Maria; Zeni, Luigi

2016-05-01

A novel sensing platform based on thin metal bilayer for surface plasmon resonance (SPR) in a D-shaped plastic optical fiber (POF) has been designed, implemented and tested. The experimental results are congruent with the numerical studies. This platform has been properly optimized to work in the 1.38 -1.42 refractive index range and it exhibits excellent sensitivity. This refractive index range is very interesting for bio-chemical applications, where the polymer layer are used as receptors (e.g. molecularly imprinted polymer) or to immobilize the bio-receptor on the metal surface. The proposed metallic bilayer is based on palladium and gold films and replaces the traditional gold by exhibiting higher performances. Furthermore, the deposition of the thin bilayer is a single process and no further manufacturing step is required. In fact, in this case the photoresist buffer layer between the POF core and the metal layer, usually required to increase the refractive index range, is no longer necessary.

Modified cantilevers to probe unambiguously out-of-plane piezoresponse

NASA Astrophysics Data System (ADS)

Alyabyeva, Natalia; Ouvrard, Aimeric; Lindfors-Vrejoiu, Ionela; Kolomiytsev, Alexey; Solodovnik, Maxim; Ageev, Oleg; McGrouther, Damien

2018-06-01

We demonstrate and investigate the coupling of contributions from both in-plane (IP) polarization and out-of-plane (OP) components in BiFeO3 (BFO) thin-film polarization probed by piezoresponse force microscopy (PFM). Such coupling leads to image artifacts which prevent the correct determination of OP polarization vector directions and the corresponding piezoelectric coefficient d33. Using material strength theory with a one-dimensional modeling of the cantilever oscillation amplitude under electrostatic and elastic forces as a function of the tip length, we have evidenced the impact of IP piezoresponse to the OP signal for tip length longer than 4 μm. The IP polarization vector induces a significant longitudinal bending of the cantilever, due to the small spring constant of long tips, which provokes a normal deviation superimposed to the OP piezoresponse. These artifacts can be reduced by increasing the longitudinal spring constant of the cantilever by shortening the tip length. Standard cantilevers with 15-μm-long tips were modified to reach the desired tip length, using focused ion-beam techniques and tested using PFM on the same BFO thin film. Tip length shortening has strongly reduced IP artifacts as expected, while the impact of nonlocal electrostatic forces, becoming predominant for tips shorter than 1 μm, has led to a non-negligible deflection offset. For shorter tips, a strong electric field from a cantilever beam can induce polarization switching as observed for a 0.5-μm-long tip. Tip length ranging from 1 to 4 μm allowed minimizing both artifacts to probe unambiguously OP piezoresponse and quantify the d33 piezoelectric coefficient.

Novel organic semiconductors and a high capacitance gate dielectric for organic thin film transistors

NASA Astrophysics Data System (ADS)

Cai, Xiuyu

2007-12-01

Organic semiconductors are attracting more and more interest as a promising set of materials in the field of electronics research. This thesis focused on several new organic semiconductors and a novel high-kappa dielectric thin film (SrTiO3), which are two essential parts in Organic Thin Film Transistors (OTFTs). Structure and morphology of thin films of tricyanovinyl capped oligothiophenes were studied using atomic force microscopy and x-ray diffraction. Thin film transistors of one compound exhibited a reasonable electron mobility of 0.02 cm2/Vs. Temperature dependent measurements on the thin film transistor based on this compound revealed shallow trap states that were interpreted in terms of a multiple trap and release model. Moreover, inversion of the majority charge carrier type from electrons to holes was observed when the number of oligothiophene rings increased to six and ambipolar transport behavior was observed for tricyanovinyl sexithiophene. Another interesting organic semiconductor compound is the fluoalkylquarterthiophene, which showed ambipolar transport and large hysteresis in the transfer curve. Due to the bistable state at floating gate, the thin film transistor was exploited to study non-volatile floating gate memory effects. The temperature dependence of the retention time for this memory device revealed that the electron trapping was an activated process. Following the earlier work on hybrid acene-thiophene organic semiconductors, new compounds with similar structure were studied to reveal the mechanism of the air-stability exhibited by some compounds. They all formed highly crystalline thin films and showed reasonable device performances which are well correlated with the molecular structures, thin film microstructures, and solid state packing. The most air-stable compound had no observable degradation with exposure to air for 15 months. SrTiO3 was developed to be employed in OTFTs. Optimization of thin film growth was performed using reactive sputtering growth. Excellent SrTiO3 epitaixal thin film growth was revealed on conductive SrTiO 3:Nb substrates. A maximum charge carrier density of 1014 cm-2 was obtained based on pentacene and perylene diimide thin film transistors. Some new physical phenomena, such as step-like transfer characteristic curve and negative transconductance, were observed at such high field effect induced charge carrier density.

Spatial and thickness dependence of coupling interaction of surface states and influence on transport and optical properties of few-layer Bi2Se3

NASA Astrophysics Data System (ADS)

Li, Zhongjun; Chen, Shi; Sun, Jiuyu; Li, Xingxing; Qiu, Huaili; Yang, Jinlong

2018-02-01

Coupling interaction between the bottom and top surface electronic states and the influence on transport and optical properties of Bi2Se3 thin films with 1-8 quintuple layers (QLs) have been investigated by first principles calculations. Obvious spatial and thickness dependences of coupling interaction are found by analyzing hybridization of two surface states. In the thin film with a certain thickness, from the outer to inner atomic layers, the coupling interaction exhibits an increasing trend. On the other hand, as thickness increases, the coupling interaction shows a disproportionate decrease trend. Moreover, the system with 3 QLs exhibits stronger interaction than that with 2 QLs. The presence of coupling interaction would suppress destructive interference of surface states and enhance resistance in various degrees. In view of the inversely proportional relation to transport channel width, the resistance of thin films should show disproportionate thickness dependence. This prediction is qualitatively consistent with the transport measurements at low temperature. Furthermore, the optical properties also exhibit obvious thickness dependence. Especially as the thickness increases, the coupling interaction results in red and blue shifts of the multiple-peak structures in low and high energy regions of imaginary dielectric function, respectively. The red shift trend is in agreement with the recent experimental observation and the blue shift is firstly predicted by the present calculation. The present results give a concrete understanding of transport and optical properties in devices based on Bi2Se3 thin films with few QLs.

Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, Jyoti, E-mail: shah.jyoti1@gmail.com; Kotnala, Ravinder K., E-mail: rkkotnala@nplindia.org, E-mail: rkkotnala@gmail.com

2014-04-07

Thin film of BaTiO{sub 3} doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO{sub 3} substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm{sup 2} and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film inmore » presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10{sup −12} to 5.4 × 10{sup −11} F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.« less

Piezoresistivity of mechanically drawn single-walled carbon nanotube (SWCNT) thin films-: mechanism and optimizing principle

NASA Astrophysics Data System (ADS)

Obitayo, Waris

The individual carbon nanotube (CNT) based strain sensors have been found to have excellent piezoresistive properties with a reported gauge factor (GF) of up to 3000. This GF on the other hand, has been shown to be structurally dependent on the nanotubes. In contrast, to individual CNT based strain sensors, the ensemble CNT based strain sensors have very low GFs e.g. for a single walled carbon nanotube (SWCNT) thin film strain sensor, GF is ~1. As a result, studies which are mostly numerical/analytical have revealed the dependence of piezoresistivity on key parameters like concentration, orientation, length and diameter, aspect ratio, energy barrier height and Poisson ratio of polymer matrix. The fundamental understanding of the piezoresistive mechanism in an ensemble CNT based strain sensor still remains unclear, largely due to discrepancies in the outcomes of these numerical studies. Besides, there have been little or no experimental confirmation of these studies. The goal of my PhD is to study the mechanism and the optimizing principle of a SWCNT thin film strain sensor and provide experimental validation of the numerical/analytical investigations. The dependence of the piezoresistivity on key parameters like orientation, network density, bundle diameter (effective tunneling area), and length is studied, and how one can effectively optimize the piezoresistive behavior of a SWCNT thin film strain sensors. To reach this goal, my first research accomplishment involves the study of orientation of SWCNTs and its effect on the piezoresistivity of mechanically drawn SWCNT thin film based piezoresistive sensors. Using polarized Raman spectroscopy analysis and coupled electrical-mechanical test, a quantitative relationship between the strain sensitivity and SWCNT alignment order parameter was established. As compared to randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~6x increase on the GF. My second accomplishment involves studying the influence of the network density on the piezoresistivity of mechanically drawn SWCNT thin films. Mechanically drawn SWCNT thin films with different layer (or thickness) e.g. 1-layer, 3-layer, 10-layer and 20-layer SWCNT thin films were prepared to understand the variation of SWCNT network density as well as the alignment of SWCNTs on the strain sensitivity. The less entangled SWCNT bundles observed in the sparse network density (1- layer and 3-layer SWCNT thin films) allows for easy alignment and the best gauge factors. As compared to the randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~8x increase on the GF for the 1-layer SWCNT thin films while the 20-layer SWCNT thin films exhibited ~3x increase in the GF. My third accomplishment examines the effect of SWCNT bundles with different diameters on the piezoresistive behavior of mechanically drawn SWCNT thin films. SWCNT thin film network of sparse morphology (1-layer) with different bundle sizes were prepared by varying the sonication duration e.g. S0.5hr, S4hr, S10hr and S20hr and using spraying coating. The GF increased by a factor of ~10 when the randomly oriented SWCNT thin film was stretched to a draw ratio of 3.2 for the S0.5hr SWCNT thin films and by a factor of ~2 for the S20hr SWCNT thin films. Three main mechanisms were attributed to this behavior e.g. effect of concentration of exfoliated nanotubes, bundle reduction due to mechanical stretching, and influence of bundle length on the alignment of SWCNTs. Furthermore, information about the average length and length distribution is very essential when investigating the influence of individual nanotube length on the strain sensitivity. With that in mind, we would use our previously developed preparative ultracentrifuge method (PUM), and our newly developed gel electrophoresis and simultaneous Raman and photoluminescence spectroscopy (GEP-SRSPL) to characterize the average length and length distribution of individual SWCNTs respectively.

Lithium battery electrodes with ultra-thin alumina coatings

DOEpatents

Se-Hee, Lee; George, Steven M.; Cavanagh, Andrew S.; Yoon Seok, Jung; Dillon, Anne C.

2015-11-24

Electrodes for lithium batteries are coated via an atomic layer deposition process. The coatings can be applied to the assembled electrodes, or in some cases to particles of electrode material prior to assembling the particles into an electrode. The coatings can be as thin as 2 .ANG.ngstroms thick. The coating provides for a stable electrode. Batteries containing the electrodes tend to exhibit high cycling capacities.

Photoluminescence of ZnS-SiO2:Ce Thin Films Deposited by Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Mizuno, Masao

2011-12-01

Photoluminescent emissions of zinc sulfide-silica-cerium thin films deposited by magnetron sputtering were observed. The films consisted of ZnS nanocrystals embedded in amorphous SiO2 matrices. ZnS-SiO2:Ce films exhibited photoluminescence even without postannealing. Their emission spectra showed broad patterns in the visible range; the emitted colors depended on film composition.

Sodium-Ion Batteries: Improving the Rate Capability of 3D Interconnected Carbon Nanofibers Thin Film by Boron, Nitrogen Dual-Doping.

PubMed

Wang, Min; Yang, Yang; Yang, Zhenzhong; Gu, Lin; Chen, Qianwang; Yu, Yan

2017-04-01

Boron, nitrogen dual-doping 3D hard carbon nanofibers thin film is synthesized using a facile process. The nanofibers exhibit high specific capacity and remarkable high-rate capability due to the synergistic effect of 3D porous structure, large surface area, and enlarged carbon layer spacing, and the B, N codoping-induced defects.

Enhancing the color gamut of white displays using novel deep-blue organic fluorescent dyes to form color-changed thin films with improved efficiency

NASA Astrophysics Data System (ADS)

Liu, Wei-Ting; Huang, Wen-Yao

2012-10-01

This study used the novel fluorescence based deep-blue-emitting molecule BPVPDA in an organic fluorescent color thin film to exhibit deep blue color with CIE coordinates of (0.13, 0.16). The developed original organic RGB color thin film technology enables the optimization of the distinctive features of an organic light emitting diode (OLED) and thin-film-transistor (TFT) LCD display. The color filter structure maintains the same high resolution to obtain a higher level of brightness in comparison with conventional organic RGB color thin film. The image-processing engine is designed to achieve a sharp text image for a TFT LCD with organic color thin films. The organic color thin films structure uses an organic dye dopant in a limpid photoresist. With this technology, the following characteristics can be obtained: 1. high color reproduction of gamut ratio, and 2. improved luminous efficiency with organic color fluorescent thin film. This performance is among the best results ever reported for a color-filter used on TFT-LCD or OLED.

Enhancing the color gamut of white displays using novel deep-blue organic fluorescent dyes to form color-changed thin films with improved efficiency

NASA Astrophysics Data System (ADS)

Liu, Wei-ting; Huang, Wen-Yao

2012-06-01

This study used novel fluorescence based deep-blue-emitting molecules, namely BPVPDA, an organic fluorescence color thin film using BPVPDA exhibit deep blue fluorine with CIE coordinates of (0.13,0.16). The developed original Organic RGB color thin film technology enables the optimization of the distinctive features of an organic light emitting diode (OLED) and (TFT) LCD display. The color filter structure maintains the same high resolution to obtain a higher level of brightness, in comparison with conventional organic RGB color thin film. The image-processing engine is designed to achieve a sharp text image for a thin-film-transistor (TFT) LCD with organic color thin films. The organic color thin films structure uses organic dye dopent in limpid photo resist. With this technology , the following characteristics can be obtained: (1) high color reproduction of gamut ratio, and (2) improved luminous efficiency with organic color fluorescence thin film. This performance is among the best results ever reported for a color-filter used on TFT-LCD and OLED.

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

The Role of Morphology and Electronic Chain Aggregation on the Optical Gain Properties of Semiconducting Conjugated Polymers

NASA Astrophysics Data System (ADS)

Lampert, Zachary Evan

Conjugated polymers (CPs) are a novel class of materials that exhibit the optical and electrical properties of semiconductors while still retaining the durability and processability of plastics. CPs are also intrinsically 4-level systems with high luminescence quantum efficiencies making them particularly attractive as organic gain media for solid-state laser applications. However, before CPs can emerge as a commercially available laser technology, a more comprehensive understanding of the morphological dependence of the photophysics is required. In this thesis, the morphology and chain conformation dependence of amplified spontaneous emission (ASE) and optical gain in thin films of poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) was investigated. By changing the chemical nature of the solvent from which films were cast, as well as the temperature at which films were annealed, CP films with different morphologies, and hence different degrees of interchain interactions were achieved. Contrary to the common perception that polymer morphology plays a decisive role in determining the ASE behavior of thin CP films, we found that chromophore aggregation and degree of conformational order have minimal impact on optical gain. In fact, experimental results indicated that an extremely large fraction of interchain aggregate species and/or exciton dissociating defects are required to significantly alter the optical properties and suppress stimulated emission. These results are pertinent to the fabrication and optimization of an electrically pumped laser device, as improvements in charge carrier mobility through controlled increases in chain aggregation may provide a viable means of optimizing injection efficiency without significantly degrading optical gain. To offset charge-induced absorption losses under electrical pumping, and to enable the use of more compact and economical sources under optical pumping, conjugated polymers exhibiting low lasing thresholds and large net gains are highly desirable. In this thesis, we also discuss novel routes we developed for enhancement of ASE performance in MEH-PPV thin film planar waveguides. The first technique relied on improving the distribution of the TE0 guided mode in the CP gain layer through optimization of waveguide architecture. This was achieved by fabricating symmetric heterostructure waveguides formed from a core layer of MEH-PPV sandwiched between an SiO2 buffer and index matched poly(methyl methacrylate) (PMMA) cover layer. Relative to asymmetric waveguides of Si(100)/SiO2/MEH-PPV/Air, symmetric waveguides exhibited increased optical confinement and reduced propagation loss enabling lower ASE threshold (40%) and higher net gain (50%). Independent of device architecture and degree of aggregation in the films, we discovered that optical gain is also highly dependent on the excitation conditions, specifically the temporal width of the pump laser pulses. A 400% increase in net gain was achieved under transient (25 picosecond pulses), compared to quasi-steady state (8 nanosecond pulses), excitation conditions. This large difference is attributed to low pumping efficiency and increased non-radiative recombination under ns pumping, which reduces the emission cross-section resulting in a net decrease in gain. The gain values we achieved in the ps regime are to the best of our knowledge the largest gain values reported to date for thin conjugated polymer films measured using the variable stripe length (VSL) technique. Films pumped in the transient regime also required 30 times less pump energy density to reach threshold in comparison with films pumped in the quasi-steady state regime, although the excited state densities were essentially the same. These results demonstrate that the pumping efficiency, and hence generation rate of excited states in a gain medium, can be dramatically increased by using pump laser pulses that are shorter than the exciton luminescence lifetime

Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

NASA Astrophysics Data System (ADS)

Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

2010-02-01

Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

Enhancement of Gas Barrier Properties of CFRP Laminates Fabricated Using Thin-Ply Prepregs

NASA Astrophysics Data System (ADS)

横関, 智弘; 高木, 智宏; 吉村, 彰記; Ogasawara, Toshio; 荻原, 慎二

Composite laminates manufactured using thin-ply prepregs are expected to have superior resistance properties against microcracking compared to those using standard prepregs. In this study, comparative investigations are presented on the microcrack accumulation and gas leakage characteristics of CFRP laminates fabricated using standard and thin-ply prepregs, consisting of high-performance carbon fiber and toughened epoxy, as a fundamental research on the cryogenic composite tanks for future space vehicles. It was shown that laminates using thin-ply prepregs exhibited much higher strain at microcrack initiation compared to those using standard prepregs at room and cryogenic temperatures. In addition, helium gas leak tests using CFRP laminated tubular specimens subjected to quasi-static tension loadings were performed. It was demonstrated that CFRP laminates using thin-ply prepregs have higher gas barrier properties than those using standard prepregs.

Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Jie; Fundamental Department, Aviation University, Changchun 130022; Li Ming

2011-04-15

In this paper, a W-Ta thin-film thermocouple has been integrated on a diamond anvil cell by thin-film deposition and photolithography methods. The thermocouple was calibrated and its thermal electromotive force was studied under high pressure. The results indicate that the thermal electromotive force of the thermocouple exhibits a linear relationship with temperature and is not associated with pressure. The resistivity measurement of ZnS powders under high pressure at different temperatures shows that the phase transition pressure decreases as the temperature increases.

Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure.

PubMed

Yang, Jie; Li, Ming; Zhang, Honglin; Gao, Chunxiao

2011-04-01

In this paper, a W-Ta thin-film thermocouple has been integrated on a diamond anvil cell by thin-film deposition and photolithography methods. The thermocouple was calibrated and its thermal electromotive force was studied under high pressure. The results indicate that the thermal electromotive force of the thermocouple exhibits a linear relationship with temperature and is not associated with pressure. The resistivity measurement of ZnS powders under high pressure at different temperatures shows that the phase transition pressure decreases as the temperature increases. © 2011 American Institute of Physics

Optimal thickness of silicon membranes to achieve maximum thermoelectric efficiency: A first principles study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangold, Claudia; Neogi, Sanghamitra; Max Planck Institut für Polymerforschung, Ackermannweg 10, D-55128 Mainz

2016-08-01

Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

PubMed Central

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-01-01

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. PMID:29112139

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

PubMed

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-11-07

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Reflow dynamics of thin patterned viscous films

NASA Astrophysics Data System (ADS)

Leveder, T.; Landis, S.; Davoust, L.

2008-01-01

This letter presents a study of viscous smoothening dynamics of a nanopatterned thin film. Ultrathin film manufacturing processes appearing to be a key point of nanotechnology engineering and numerous studies have been recently led in order to exhibit driving parameters of this transient surface motion, focusing on time scale accuracy method. Based on nanomechanical analysis, this letter shows that controlled shape measurements provided much more detailed information about reflow mechanism. Control of reflow process of any complex surface shape, or measurement of material parameter as thin film viscosity, free surface energy, or even Hamaker constant are therefore possible.

Nonlinear optics of astaxanthin thin films

NASA Astrophysics Data System (ADS)

Esser, A.; Fisch, Herbert; Haas, Karl-Heinz; Haedicke, E.; Paust, J.; Schrof, Wolfgang; Ticktin, Anton

1993-02-01

Carotinoids exhibit large nonlinear optical properties due to their extended (pi) -electron system. Compared to other polyenes which show a broad distribution of conjugation lengths, carotinoids exhibit a well defined molecular structure, i.e. a well defined conjugation length. Therefore the carotinoid molecules can serve as model compounds to study the relationship between structure and nonlinear optical properties. In this paper the synthesis of four astaxanthins with C-numbers ranging from 30 to 60, their preparation into thin films, wavelength dispersive Third Harmonic Generation (THG) measurements and some molecular modelling calculations will be presented. Resonant (chi) (3) values reach 1.2(DOT)10-10 esu for C60 astaxanthin. In the nonresonant regime a figure of merit (chi) (3)/(alpha) of several 10-13 esu-cm is demonstrated.

Atomically thin two-dimensional organic-inorganic hybrid perovskites

NASA Astrophysics Data System (ADS)

Dou, Letian; Wong, Andrew B.; Yu, Yi; Lai, Minliang; Kornienko, Nikolay; Eaton, Samuel W.; Fu, Anthony; Bischak, Connor G.; Ma, Jie; Ding, Tina; Ginsberg, Naomi S.; Wang, Lin-Wang; Alivisatos, A. Paul; Yang, Peidong

2015-09-01

Organic-inorganic hybrid perovskites, which have proved to be promising semiconductor materials for photovoltaic applications, have been made into atomically thin two-dimensional (2D) sheets. We report the solution-phase growth of single- and few-unit-cell-thick single-crystalline 2D hybrid perovskites of (C4H9NH3)2PbBr4 with well-defined square shape and large size. In contrast to other 2D materials, the hybrid perovskite sheets exhibit an unusual structural relaxation, and this structural change leads to a band gap shift as compared to the bulk crystal. The high-quality 2D crystals exhibit efficient photoluminescence, and color tuning could be achieved by changing sheet thickness as well as composition via the synthesis of related materials.

Preparation and characterization of sprayed FTO thin films

NASA Astrophysics Data System (ADS)

Abd-Lefdil, M.; Diaz, R.; Bihri, H.; Aouaj, M. Ait; Rueda, F.

2007-06-01

Fluorine doped tin oxide (FTO) thin films have been prepared by spray pyrolysis technique with no further annealing. Films with 2.5% of fluorine grown at 400 °C present a single phase and exhibit a tetragonal structure with lattice parameters a = 4.687 Å and c = 3.160 Å. Scanning electron micrographs showed homogeneous surfaces with average grain size around 190 nm. The films are transparent in the visible zone and exhibit a high reflectance in the near infrared region. The best electrical resistivity was 6.3 × 10-4 Ω cm for FTO with 2.5% of fluorine. The ratio of transmittance in the visible to the sheet resistance are in the 0.57 × 10-2 1.96 × 10-2 {Ω }-1 range.

Characterizing Non-Uniformity of Performance of Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Clark, Eric B. (Technical Monitor); Lush, Gregory B.

2003-01-01

Thin-film Solar Cells are being actively studied for terrestrial and space applications because of their potential to provide low-cost, lightweight, and flexible electric power system. Currently, thin-film solar cell performance is limited partially by the nonuniformity of performance that they typically exhibit. This nonuniformity of performance necessitates more detailed characterization techniques than the well-known macroscopic measurements such as current-voltage and efficiency. This project seeks to explore methods of characterization that take into account the spatial nonuniformity of thin-film solar cells. In this presentation we show results of electroluminescence images, short-circuit maps, and Kelvin Probe maps. All these mapping characterization and analysis tools show that the non-uniformities can correlated with device performance and efficiency.

Strain dependence of the electronic properties of LaTiO3 thin films

NASA Astrophysics Data System (ADS)

Moon, S. J.; Kim, Y. S.

2014-11-01

We report on the transport and the core-level X-ray photoemission spectroscopy data of fully-strained LaTiO3 thin films grown on GdScO3 and SrTiO3 substrates. We observed that LaTiO3 thin film grown on GdScO3 showed insulating behavior but that grown on SrTiO3 exhibited a metallic character. We found that while the La 4 d photoemission spectra of the two films were nearly the same, their Ti 2 p and O 1 s data revealed a difference. Our results suggest that strain-induced changes in the Ti-O bonding play an important role in the electronic properties of LaTiO3 thin films.

Optical coupling between atomically thin black phosphorus and a two dimensional photonic crystal nanocavity

NASA Astrophysics Data System (ADS)

Ota, Yasutomo; Moriya, Rai; Yabuki, Naoto; Arai, Miho; Kakuda, Masahiro; Iwamoto, Satoshi; Machida, Tomoki; Arakawa, Yasuhiko

2017-05-01

Atomically thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared region. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared region, which includes the technologically important optical telecommunication wavelength bands. In this letter, we demonstrate the optical coupling between atomically thin BP and a 2D photonic crystal nanocavity. We employed a home-build dry transfer apparatus for placing a thin BP flake on the surface of the nanocavity. Their optical coupling was analyzed through measuring cavity mode emission under optical carrier injection at room temperature.

Physical properties of nanostructured strontium oxide thin film grown by chemical bath deposition technique

NASA Astrophysics Data System (ADS)

Ahmad, Farhan; Belkhedkar, M. R.; Salodkar, R. V.

2018-05-01

Nanostructured SrO thin film of thickness 139 nm was deposited by chemical bath deposition technique onto glass substrates using SrCl2.6H2O and NaOH as cationic and anionic precursors without complexing agents. The X-ray diffraction studies revealed that, SrO thin film is nanocrystalline in nature with cubic structure. The surface morphology of the SrO film was investigated by means of field emission scanning electron microscopy. The optical studies showed that SrO film exhibits direct as well as indirect optical band gap energy. The electrical resistivity and activation energy of SrO thin film is found to be of the order of 106 Ω cm and 0.58eV respectively.

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

NASA Astrophysics Data System (ADS)

Kim, Dae-Hwan; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-03-01

We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

Inelastic deformation of plasma polymerised thin films facilitated by transient dense plasma focus irradiation

NASA Astrophysics Data System (ADS)

Grant, Daniel S.; Rawat, Rajdeep S.; Bazaka, Kateryna; Jacob, Mohan V.

2017-09-01

The high degree of crosslinking present in plasma polymerised thin films, coupled with their high molecular weight, imbues these films with properties similar to those of thermosetting polymers. For instance, such films tend to be relatively hard, insoluble, and to date have not exhibited plasticity when subjected to elevated temperatures. In this paper it is demonstrated that plasma polymers can, in fact, undergo plastic deformation in response to the application of extremely short-lived thermal treatment delivered by a dense plasma focus device, as evidenced by the evolution of bubble-like structures from the thin film. This finding suggests new avenues for texturing plasma thin films, and synthesising cavities that may find utility as thermal insulators or domains for material encapsulation.

Employment of a metal microgrid as a front electrode in a sandwich-structured photodetector.

PubMed

Zhang, Junying; Cai, Chao; Pan, Feng; Hao, Weichang; Zhang, Weiwei; Wang, Tianmin

2009-07-01

A highly UV-transparent metal microgrid was prepared and employed as the front electrode in a sandwich-structured ultraviolet (UV) photodetector using TiO(2) thin film as the semiconductor layer. The photo-generated charger carriers travel a shorter distance before reaching the electrodes in comparison with a photodetector using large-spaced interdigitated metal electrodes (where distance between fingers is several to tens of micrometers) on the surface of the semiconductor film. This photodetector responds to UV light irradiation, and the photocurrent intensity increases linearly with the irradiation intensity below 0.2 mW/cm(2).

Space Environmentally Stable Polyimides and Copolyimides

NASA Technical Reports Server (NTRS)

Watson, Kent A.; Connell, John W.

2000-01-01

Polyimides with a unique combination of properties including low color in thin films, atomic oxygen (AO), ultra-violet (UV) radiation resistance, solubility in organic solvents in the imide form, high glass transition (T(sub g)) temperatures and high thermal stability have been prepared and characterized. The polymers were prepared by reacting a novel aromatic diamine with aromatic dianhydrides in a polar aprotic solvent. The solubility of the polymers in the imide form as well as the color density of thin films were dependent upon the chemical structure of the dianhydride. Several thin films (25-50 mm thick) prepared by solution casting of amide acid or imide solutions exhibited very low color and high optical transparency (approximately 90%) as determined by UV/visible spectroscopy. The polymers exhibited T(sub g)s >200 C depending upon the structure of the dianhydride and temperatures of 5% weight loss approximately 500C in air as determined by dynamic thermogravimetric analysis. Thin films coated with silver/inconel were exposed to a high fluence of AO and 1000 equivalent solar hours of UV radiation. The effects of these exposures on optical properties were minor. These space environmentally durable polymers are potentially useful in a variety of applications on spacecraft such as thin film membranes on antennas, second-surface mirrors, thermal/optical coatings and multi-layer thermal insulation (MLI) blanket materials. The chemistry, physical and mechanical properties of the polymers as well as their responses to AO and UV exposure will be discussed.

Rheological Properties of Aqueous Colloidal Silica Suspensions Related to Amendment Delivery for Subsurface Remediation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Shuo; Zhong, Lirong; Li, Guanghe

Colloidal silica (fumed silica) suspensions are being tested as carriers for remedial amendment delivery in subsurface remediation and as media for underground contamination containment. The knowledge of the rheological behavior of the silica suspensions is lack in the literature while it is essential for the preparation and field injection of the suspensions. This contribution is focused on the rheological characteristics of colloidal silica suspensions under various environmental conditions relevant to amendment delivery for subsurface remediation. We investigated the influence of silica particle concentration, water source, ionic strength, pH, aging, amendment type and concentration, and subsurface sediment on the rheological behaviormore » of the suspensions. All tested suspension formulations exhibited shear thinning before gelation. Higher silica particle concentration and salinity (Na+ and K+) increased suspensions’ viscosity and the degree of shear thinning. The viscosity of suspensions increased with aging. The suspensions at natural pH exhibited the highest viscosity compared to the acidic and alkaline suspensions with the same silica concentration. Addition of KMnO4 amendment to aqueous silica suspensions increased viscosity, while addition of alcohol amendment decreased suspensions’ viscosity. The presence of amendment did not reduce shear thinning. The gelation rate of silica suspensions was increased with silica concentration and with the addition of sediments. The rheological characteristics of shear thinning aqueous fumed silica suspensions were compared to that of shear thinning solutions formed with organic polymer xanthan gum, which was applied for amendment delivery in subsurface remediation.« less

Pre-fire treatment effects and post-fire forest dynamics on the Rodeo-Chediski burn area, Arizona

Treesearch

Barbara A. Strom

2005-01-01

The 2002 Rodeo-Chediski fire was the largest wildfire in Arizona history at 189,000 ha (468,000 acres), and exhibited some of the most extreme fire behavior ever seen in the Southwest. Pre-fire fuel reduction treatments of thinning, timber harvesting, and prescribed burning on the White Mountain Apache Tribal lands (WMAT) and thinning on the Apache-Sitgreaves National...

Binder-free manganese oxide/carbon nanomaterials thin film electrode for supercapacitors.

PubMed

Wang, Ning; Wu, Chuxin; Li, Jiaxin; Dong, Guofa; Guan, Lunhui

2011-11-01

A ternary thin film electrode was created by coating manganese oxide onto a network composed of single-walled carbon nanotubes and single-walled carbon nanohorns. The electrode exhibited a porous structure, which is a promising architecture for supercapacitors applications. The maximum specific capacitances of 357 F/g for total electrode at 1 A/g were achieved in 0.1 M Na(2)SO(4) aqueous solution.

Nonlinear Transport in Organic Thin Film Transistors with Soluble Small Molecule Semiconductor.

PubMed

Kim, Hyeok; Song, Dong-Seok; Kwon, Jin-Hyuk; Jung, Ji-Hoon; Kim, Do-Kyung; Kim, SeonMin; Kang, In Man; Park, Jonghoo; Tae, Heung-Sik; Battaglini, Nicolas; Lang, Philippe; Horowitz, Gilles; Bae, Jin-Hyuk

2016-03-01

Nonlinear transport is intensively explained through Poole-Frenkel (PF) transport mechanism in organic thin film transistors with solution-processed small molecules, which is, 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene. We outline a detailed electrical study that identifies the source to drain field dependent mobility. Devices with diverse channel lengths enable the extensive exhibition of field dependent mobility due to thermal activation of carriers among traps.

Bed-Load Dispersion: A Literature Review

DTIC Science & Technology

2016-12-01

buried. The observed mean and variance of particle dis- placements from experimental measurements at specific time snap-shots can be used to determine...dispersion coefficient equation: . ( 8 ) For the range of experimental conditions tested within the Chang and Yen (2002) study, their equation... surveys , 51 exhibited thin-tail distri- butions and 8 more could have been considered thin-tail based on the definition of the ‘tail’. Liebault et al

Substrates suitable for deposition of superconducting thin films

DOEpatents

Feenstra, Roeland; Boatner, Lynn A.

1993-01-01

A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Superconducting thin films on potassium tantalate substrates

DOEpatents

Feenstra, Roeland; Boatner, Lynn A.

1992-01-01

A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

A general synthesis strategy for the multifunctional 3D polypyrrole foam of thin 2D nanosheets

NASA Astrophysics Data System (ADS)

Xue, Jiangli; Mo, Maosong; Liu, Zhuming; Ye, Dapeng; Cheng, Zhihua; Xu, Tong; Qu, Liangti

2018-05-01

A 3D macroporous conductive polymer foam of thin 2D polypyrrole (PPy) nanosheets is developed by adopting a novel intercalation of guest (monomer Py) between the layers of the lamellar host (3D vanadium oxide foam) template-replication strategy. The 3D PPy foam of thin 2D nanosheets exhibits diverse functions including reversible compressibility, shape memory, absorption/adsorption and mechanically deformable supercapacitor characteristics. The as-prepared 3D PPy foam of thin nanosheets is highly light weight with a density of 12 mg·cm-3 which can bear the large compressive strain up to 80% whether in wet or dry states; and can absorb organic solutions or extract dye molecules fast and efficiently. In particular, the PPy nanosheet-based foamas a mechanically deformable electrode material for supercapacitors exhibits high specific capacitance of 70 F·g-1 at a fast charge-discharge rate of 50 mA·g-1, superior to that of any other typical pure PPy-based capacitor. We envision that the strategy presented here should be applicable to fabrication of a wide variety of organic polymer foams and hydrogels of low-dimensional nanostructures and even inorganic foams and hydrogels of low-dimensional nanostructures, and thus allow for exploration of their advanced physical and chemical properties.

Self-assembly of a thin highly reduced graphene oxide film and its high electrocatalytic activity

NASA Astrophysics Data System (ADS)

Bai, Yan-Feng; Zhang, Yong-Fang; Zhou, An-Wei; Li, Hai-Wai; Zhang, Yu; Luong, John H. T.; Cui, Hui-Fang

2014-10-01

A thin highly reduced graphene oxide (rGO) film was self-assembled at the dimethyl formamide (DMF)-air interface through evaporation-induced water-assisted thin film formation at the pentane-DMF interface, followed by complete evaporation of pentane. The thin film was transferred onto various solid substrates for film characterization and electrochemical sensing. UV-visible spectrometry, scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrochemistry techniques were used to characterize the film. An rGO film showing 82.8% of the transmittance at 550 nm corresponds to a few layers of rGO nanosheets. The rGO nanosheets cross-stack with each other, lying approximately in the plane of the film. An rGO film collected on a glassy carbon (GC) electrode exhibited improved electrical conductivity compared to GC, with the electrode charge-transfer resistance (Rct) reduced from 31 Ω to 22 Ω. The as-formed rGO/GC electrode was mechanically very stable, exhibiting significantly enhanced electrocatalytic activity to H2O2 and dopamine. Multiple layers of the rGO films on the GC electrode showed even stronger electrocatalytic activity to dopamine than that of the single rGO film layer. The controllable formation of a stable rGO film on various solid substrates has potential applications for nanoelectronics and sensors/biosensors.

A general synthesis strategy for the multifunctional 3D polypyrrole foam of thin 2D nanosheets

NASA Astrophysics Data System (ADS)

Xue, Jiangli; Mo, Maosong; Liu, Zhuming; Ye, Dapeng; Cheng, Zhihua; Xu, Tong; Qu, Liangti

2018-06-01

A 3D macroporous conductive polymer foam of thin 2D polypyrrole (PPy) nanosheets is developed by adopting a novel intercalation of guest (monomer Py) between the layers of the lamellar host (3D vanadium oxide foam) template-replication strategy. The 3D PPy foam of thin 2D nanosheets exhibits diverse functions including reversible compressibility, shape memory, absorption/adsorption and mechanically deformable supercapacitor characteristics. The as-prepared 3D PPy foam of thin nanosheets is highly light weight with a density of 12 mg·cm-3 which can bear the large compressive strain up to 80% whether in wet or dry states; and can absorb organic solutions or extract dye molecules fast and efficiently. In particular, the PPy nanosheet-based foam as a mechanically deformable electrode material for supercapacitors exhibits high specific capacitance of 70 F·g-1 at a fast charge-discharge rate of 50 mA·g-1, superior to that of any other typical pure PPy-based capacitor. We envision that the strategy presented here should be applicable to fabrication of a wide variety of organic polymer foams and hydrogels of low-dimensional nanostructures and even inorganic foams and hydrogels of low-dimensional nanostructures, and thus allow for exploration of their advanced physical and chemical properties.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Surface plasmon resonance and nonlinear optical behavior of pulsed laser-deposited semitransparent nanostructured copper thin films

NASA Astrophysics Data System (ADS)

Kesarwani, Rahul; Khare, Alika

2018-06-01

In this paper, surface plasmon resonance (SPR) and nonlinear optical properties of semitransparent nanostructured copper thin films fabricated on the glass substrate at 400 °C by pulsed laser deposition technique are reported. The thickness, linear absorption coefficient and linear refractive index of the films were measured by spectroscopic ellipsometer. The average particle size as measured via atomic force microscope was in the range of 12.84-26.02 nm for the deposition time ranging from 5 to 10 min, respectively. X-ray diffraction spectra revealed the formation of Cu (111) and Cu (200) planes. All these thin films exhibited broad SPR peak. The third-order optical nonlinearity of all the samples was investigated via modified z-scan technique using cw laser at a wavelength of 632.8 nm. The open aperture z-scan spectra of Cu thin film deposited for 5 min duration exhibited reverse saturation absorption whereas all the other samples displayed saturation absorption behavior. The nonlinear refractive index coefficient of these films showed a positive sign having the magnitude of the order of 10- 4 cm/W. The real and imaginary parts of susceptibilities were also calculated from the z-scan data and found to be of the order of 10- 6 esu.

Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com

2015-06-24

We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption ofmore » ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.« less

Thin films of a ferroelectric phenazine/chloranilic acid organic cocrystal

NASA Astrophysics Data System (ADS)

Thompson, Nicholas J.; Jandl, Adam C.; Spalenka, Josef W.; Evans, Paul G.

2011-07-01

Phenazine-chloranilic acid cocrystal thin films can be formed by vacuum evaporation of the component molecules onto cooled substrates. Fluxes of phenazine and chloranilic acid were provided from separate sublimation sources, from which the cocrystalline phase can be formed under a wide range of impingement rates of the component molecules. Substrates consisted of Au or Ni thin films on Si wafers, cooled to 100-140 K during deposition. X-ray diffraction and scanning electron microscopy show that this process yields polycrystalline thin films of the cocrystal with voids between crystalline grains. The relative intensities of X-ray reflections differ from reported intensities of polycrystalline powders, suggesting that the films have an anisotropic distribution of crystallographic orientations. The cocrystalline thin films have an effective dielectric constant of 13 at room temperature, increasing at lower temperatures and exhibiting a broad maximum near 200 K. The means to grow thin films of organic ferroelectric materials will allow the integration of new functionalities into organic electronic device structures, including capacitors and field-effect transistors.

Structural, mechanical, and magnetic properties of ferrite-austenite mixture in evaporated 304 stainless steel thin films

NASA Astrophysics Data System (ADS)

Merakeb, Noureddine; Messai, Amel; Djelloul, Abdelkader; Ayesh, Ahmad I.

2015-11-01

In this paper, we investigate the structure, composition, magnetic, and mechanical properties of stainless steel thin films formed by thermal evaporation technique. These thin films reveal novel structural and physical properties where they were found to consist of nanocrystals that are ~90 % body-centred cubic crystal structure which holds ferromagnetic properties (α-phase), and ~10 % face-centred cubic crystal structure which is paramagnetic at room temperature (γ-phase). The presence of the above phases was quantified by X-ray diffraction, transmission electron microscopy, and conversion electron Mössbauer spectroscopy. The magnetic properties were evaluated by a superconducting quantum interference device magnetometer, and they confirmed the dual-phase crystal structure of the stainless thin films, where the presence of γ-phase reduced the magnetization of the produced thin films. In addition, the fabricated stainless steel thin films did not contain micro-cracks, and they exhibit a tensile stress of about 1.7 GPa, hardness of 7.5 GPa, and elastic modulus of 104 GPa.

Effect of Al doping on performance of ZnO thin film transistors

NASA Astrophysics Data System (ADS)

Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

2018-03-01

In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

PubMed Central

Chao, Chung-Hua; Wei, Da-Hua

2015-01-01

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application. PMID:26484561

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodríguez, C.A.; Sandoval-Paz, M.G.; Cabello, G.

Highlights: • High quality ZnS thin films have been deposited by chemical bath deposition technique from a non-toxic precursor’s solution. • Nanocrystalline ZnS thin films with large band gap energy were synthesized without using ammonia. • Evidence that the growing of the thin films is carried out by means of hydroxide mechanism was found. • The properties of these ZnS thin films are similar and in some cases better than the corresponding ones produced using toxic precursors such as ammonia. - Abstract: In solar cells, ZnS window layer deposited by chemical bath technique can reach the highest conversion efficiency; however,more » precursors used in the process normally are materials highly volatile, toxic and harmful to the environment and health (typically ammonia and hydrazine). In this work the characterization of ZnS thin films deposited by chemical bath in a non-toxic alkaline solution is reported. The effect of deposition technique (growth in several times) on the properties of the ZnS thin film was studied. The films exhibited a high percentage of optical transmission (greater than 80%); as the deposition time increased a decreasing in the band gap values from 3.83 eV to 3.71 eV was observed. From chemical analysis, the presence of ZnS and Zn(OH){sub 2} was identified and X-ray diffraction patterns exhibited a clear peak corresponding to ZnS hexagonal phase (1 0 3) plane, which was confirmed by electron diffraction patterns. From morphological studies, compact samples with well-defined particles, low roughness, homogeneous and pinhole-free in the surface were observed. From obtained results, it is evident that deposits of ZnS–CBD using a non-toxic solution are suitable as window layer for TFSC.« less

Laser damage threshold measurements of microstructure-based high reflectors

NASA Astrophysics Data System (ADS)

Hobbs, Douglas S.

2008-10-01

In 2007, the pulsed laser induced damage threshold (LIDT) of anti-reflecting (AR) microstructures built in fused silica and glass was shown to be up to three times greater than the LIDT of single-layer thin-film AR coatings, and at least five times greater than multiple-layer thin-film AR coatings. This result suggested that microstructure-based wavelength selective mirrors might also exhibit high LIDT. Efficient light reflection over a narrow spectral range can be produced by an array of sub-wavelength sized surface relief microstructures built in a waveguide configuration. Such surface structure resonant (SSR) filters typically achieve a reflectivity exceeding 99% over a 1-10nm range about the filter center wavelength, making SSR filters useful as laser high reflectors (HR). SSR laser mirrors consist of microstructures that are first etched in the surface of fused silica and borosilicate glass windows and subsequently coated with a thin layer of a non-absorbing high refractive index dielectric material such as tantalum pent-oxide or zinc sulfide. Results of an initial investigation into the LIDT of single layer SSR laser mirrors operating at 532nm, 1064nm and 1573nm are described along with data from SEM analysis of the microstructures, and spectral reflection measurements. None of the twelve samples tested exhibited damage thresholds above 3 J/cm2 when illuminated at the resonant wavelength, indicating that the simple single layer, first order design will need further development to be suitable for high power laser applications. Samples of SSR high reflectors entered in the Thin Film Damage Competition also exhibited low damage thresholds of less than 1 J/cm2 for the ZnS coated SSR, and just over 4 J/cm2 for the Ta2O5 coated SSR.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

PubMed

Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

2016-09-14

We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

NASA Astrophysics Data System (ADS)

Wei, Binbin; Mei, Gui; Liang, Hanfeng; Qi, Zhengbing; Zhang, Dongfang; Shen, Hao; Wang, Zhoucheng

2018-05-01

Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm-2 at 1.0 mA cm-2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm-3 and a maximum power density of 6.6 W cm-3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.

Preparation of pentacene thin film deposited using organic material auto-feeding system for the fabrication of organic thin film transistor.

PubMed

Kim, Young Baek; Choi, Bum Ho; Lim, Yong Hwan; Yoo, Ha Na; Lee, Jong Ho; Kim, Jin Hyeok

2011-02-01

In this study, pentacene organic thin film was prepared using newly developed organic material auto-feeding system integrated with linear cell and characterized. The newly developed organic material auto-feeding system consists of 4 major parts: reservoir, micro auto-feeder, vaporizer, and linear cell. The deposition of organic thin film could be precisely controlled by adjusting feeding rate, main tube size, position and size of nozzle. 10 nm thick pentacene thin film prepared on glass substrate exhibited high uniformity of 3.46% which is higher than that of conventional evaporation method using point cell. The continuous deposition without replenishment of organic material can be performed over 144 hours with regulated deposition control. The grain size of pentacene film which affect to mobility of OTFT, was controlled as a function of the temperature.

An acetate precursor process for BSCCO (2223) thin films and coprecipitated powders

NASA Technical Reports Server (NTRS)

Haertling, Gene H.

1992-01-01

Since the discovery of high temperature superconducting oxides much attention has been paid to finding better and useful ways to take advantage of the special properties exhibited by these materials. One such process is the development of thin films for engineering applications. Another such process is the coprecipitation route to producing superconducting powders. An acetate precursor process for use in thin film fabrication and a chemical coprecipitation route to Bismuth based superconducting materials has been developed. Data obtained from the thin film process were inconclusive to date and require more study. The chemical coprecipitation method of producing bulk material is a viable method, and is preferred over the previously used solid state route. This method of powder production appears to be an excellent route to producing thin section tape cast material and screen printed devices, as it requires less calcines than the oxide route to produce quality powders.

MAPLE fabrication of thin films based on kanamycin functionalized magnetite nanoparticles with anti-pathogenic properties

NASA Astrophysics Data System (ADS)

Grumezescu, Valentina; Andronescu, Ecaterina; Holban, Alina Maria; Mogoantă, Laurenţiu; Mogoşanu, George Dan; Grumezescu, Alexandru Mihai; Stănculescu, Anca; Socol, Gabriel; Iordache, Florin; Maniu, Horia; Chifiriuc, Mariana Carmen

2015-05-01

In this study we aimed to evaluate the biocompatibility and antimicrobial activity of kanamycin functionalized 5 nm-magnetite (Fe3O4@KAN) nanoparticles thin films deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. A laser deposition regime was established in order to stoichiometrically transfer Fe3O4@KAN thin films on silicone and glass substrates. Morphological and physico-chemical properties of powders and coatings were characterized by XRD, TEM, SEM, AFM and IR microscopy (IRM). Our nanostructured thin films have proved efficiency in the prevention of microbial adhesion and mature biofilms development as a result of antibiotic release in its active form. Furthermore, kanamycin functionalized nanostructures exhibit a good biocompatibility, both in vivo and in vitro, demonstrating their potential for implants application. This is the first study reporting the assessment of the in vivo biocompatibility of a magnetite-antimicrobial thin films produced by MAPLE technique.

Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

NASA Astrophysics Data System (ADS)

Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

2017-10-01

Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

Influence of Nb doping on the phase transition properties of VO2 thin films prepared by ion beam co-sputtering deposition

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Pengfei; Zhao, Lite; Liu, Jiahuan

2016-03-01

The Nb-doped VO2 thin films were successfully prepared on the glass substrates by ion beam co-sputtering at room temperature and post annealing under the air condition. The effects of the preparation processing and Nb doping on the thermal hysteresis loop and phase transition temperature of the VO2 thin films were analyzed by resistancetemperature measurement. The results show that Nb doping significantly changes the surface morphologies of VO2 thin films, and Nb-doped VO2 thin films exhibit VO2(002) preferred orientation growth with greatly improved crystallinity and orientation. Compared with pure VO2, the phase transition temperature of Nb-doped VO2 thin films drops to 40 ºC, and the width of thermal hysteresis loop narrows to 8 ºC. It is demonstrated that Nb-doped VO2 thin films prepared by ion beam co-sputtered at room temperature have an obvious thermal sensitive effect, and keep a good characteristic from metal to semiconductor phase transition.

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy.

PubMed

Bhaskaran, M; Sriram, S; Mitchell, D R G; Short, K T; Holland, A S; Mitchell, A

2009-01-01

This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on silicon. Nickel silicide is currently used as the CMOS technology standard for local interconnects and in electrical contacts. Films were characterized with a range of TEM-based techniques along with glancing angle X-ray diffraction. The nickel silicide thin films were formed by vacuum annealing thin films of nickel (50 nm) deposited on (100) silicon. The cross-sectional samples indicated a final silicide thickness of about 110 nm. This investigation studied and reports on three aspects of the thermally formed thin films: the uniformity in composition of the film using jump ratio maps; the nature of the interface using high resolution imaging; and the crystalline orientation of the thin films using selected-area electron diffraction (SAED). The analysis highlighted uniform composition in the thin films, which was also substantiated by spectroscopy techniques; an interface exhibiting the desired abrupt transition from silicide to silicon; and desired and preferential crystalline orientation corresponding to stoichiometric NiSi, supported by glancing angle X-ray diffraction results.

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aryanto, Didik, E-mail: didi027@lipi.go.id; Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah; Marwoto, Putut

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtainedmore » at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.« less

Deposition and composition-control of Mn-doped ZnO thin films by combinatorial pulsed laser deposition using two delayed plasma plumes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanchez-Ake, C.; Camacho, R.; Moreno, L.

2012-08-15

Thin films of ZnO doped with manganese were deposited by double-beam, combinatorial pulsed laser deposition. The laser-induced plasmas were studied by means of fast photography and using a Langmuir probe, whereas the films were analyzed by x-ray-diffraction and energy-dispersive x-ray spectroscopy. The effect of the relative delay between plasma plumes on the characteristics of the films was analyzed. It was found that using this parameter, it is possible to control the dopant content keeping the oriented wurtzite structure of the films. The minimum content of Mn was found for plume delays between 0 and 10 {mu}s as the interaction betweenmore » plasmas scatters the dopant species away from the substrate, thus reducing the incorporation of Mn into the films. Results suggest that for delays shorter than {approx}100 {mu}s, the expansion of the second plume through the region behind the first plume affects the composition of the film.« less

Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method

NASA Astrophysics Data System (ADS)

Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

2017-04-01

Amorphous oxide semiconductor thin-film transistors (TFT) have been considered as outstanding switch devices owing to their high mobility. However, because of their amorphous channel material with a certain level of density of states, a fast transient charging effect in an oxide TFT occurs, leading to an underestimation of the mobility value. In this paper, the effects of the fast charging of high-performance bilayer oxide semiconductor TFTs on mobility are examined in order to determine an accurate mobility extraction method. In addition, an approach based on a pulse I D -V G measurement method is proposed to determine the intrinsic mobility value. Even with the short pulse I D -V G measurement, a certain level of fast transient charge trapping cannot be avoided as long as the charge-trap start time is shorter than the pulse rising time. Using a pulse-amplitude-dependent threshold voltage characterization method, we estimated a correction factor for the apparent mobility, thus allowing us to determine the intrinsic mobility.

Electrochemically Controlled Ion-exchange Property of Carbon Nanotubes/Polypyrrole Nanocomposite in Various Electrolyte Solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Daiwon; Zhu, Chengzhou; Fu, Shaofang

2016-09-15

The electrochemically controlled ion-exchange properties of multi-wall carbon nanotube (MWNT)/electronically conductive polypyrrole (PPy) polymer composite in the various electrolyte solutions have been investigated. The ion-exchange behavior, rate and capacity of the electrochemically deposited polypyrrole with and without carbon nanotube (CNT) were compared and characterized using cyclic voltammetry (CV), chronoamperometry (CA), electrochemical quartz crystal microbalance (EQCM), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). It has been found that the presence of carbon nanotube backbone resulted in improvement in ion-exchange rate, stability of polypyrrole, and higher anion loading capacity per PPy due to higher surface area, electronic conductivity, porous structuremore » of thin film, and thinner film thickness providing shorter diffusion path. Chronoamperometric studies show that electrically switched anion exchange could be completed more than 10 times faster than pure PPy thin film. The anion selectivity of CNT/PPy film is demonstrated using X-ray photoelectron spectroscopy (XPS).« less

Non-Deterministic Dynamic Instability of Composite Shells

NASA Technical Reports Server (NTRS)

Chamis, Christos C.; Abumeri, Galib H.

2004-01-01

A computationally effective method is described to evaluate the non-deterministic dynamic instability (probabilistic dynamic buckling) of thin composite shells. The method is a judicious combination of available computer codes for finite element, composite mechanics, and probabilistic structural analysis. The solution method is incrementally updated Lagrangian. It is illustrated by applying it to thin composite cylindrical shell subjected to dynamic loads. Both deterministic and probabilistic buckling loads are evaluated to demonstrate the effectiveness of the method. A universal plot is obtained for the specific shell that can be used to approximate buckling loads for different load rates and different probability levels. Results from this plot show that the faster the rate, the higher the buckling load and the shorter the time. The lower the probability, the lower is the buckling load for a specific time. Probabilistic sensitivity results show that the ply thickness, the fiber volume ratio and the fiber longitudinal modulus, dynamic load and loading rate are the dominant uncertainties, in that order.

Dynamic Probabilistic Instability of Composite Structures

NASA Technical Reports Server (NTRS)

Chamis, Christos C.

2009-01-01

A computationally effective method is described to evaluate the non-deterministic dynamic instability (probabilistic dynamic buckling) of thin composite shells. The method is a judicious combination of available computer codes for finite element, composite mechanics and probabilistic structural analysis. The solution method is incrementally updated Lagrangian. It is illustrated by applying it to thin composite cylindrical shell subjected to dynamic loads. Both deterministic and probabilistic buckling loads are evaluated to demonstrate the effectiveness of the method. A universal plot is obtained for the specific shell that can be used to approximate buckling loads for different load rates and different probability levels. Results from this plot show that the faster the rate, the higher the buckling load and the shorter the time. The lower the probability, the lower is the buckling load for a specific time. Probabilistic sensitivity results show that the ply thickness, the fiber volume ratio and the fiber longitudinal modulus, dynamic load and loading rate are the dominant uncertainties in that order.

Moderators of the Association Between Exercise Identity and Obligatory Exercise Among Participants of an Athletic Event

PubMed Central

Karr, Trisha M.; Zunker, Christie; Thompson, Ron A.; Sherman, Roberta; Erickson, Ann; Cao, Li; Crosby, Ross D.; Mitchell, James E.

2012-01-01

Previous research has connected exercise identity with obligatory exercise, yet to date no empirical studies have identified moderator variables of this association. The current study included participants of an athletic event (full marathon, n = 582; half marathon, n = 1,106; shorter distance, n = 733) who completed questionnaires about exercise behaviors, obligatory exercise, and internalization of both the thin-ideal and athletic-ideal body shapes. General linear model analyses were conducted to examine the exercise identity-obligatory exercise relationship; moderator variables included gender, internalization of the thin-ideal body shape, and internalization of the athletic-ideal body shape. After controlling for the effects of body mass index, age, and distance group, the three-way interaction of exercise identity, gender, and internalization of the athletic-ideal body shape predicted obligatory exercise. Findings suggest that women who report high identification with exercise and high value on having an athletic physique may be vulnerable to obligatory exercise. PMID:23092850

Compartmentalized self-replication under fast PCR cycling conditions yields Taq DNA polymerase mutants with increased DNA-binding affinity and blood resistance.

PubMed

Arezi, Bahram; McKinney, Nancy; Hansen, Connie; Cayouette, Michelle; Fox, Jeffrey; Chen, Keith; Lapira, Jennifer; Hamilton, Sarah; Hogrefe, Holly

2014-01-01

Faster-cycling PCR formulations, protocols, and instruments have been developed to address the need for increased throughput and shorter turn-around times for PCR-based assays. Although run times can be cut by up to 50%, shorter cycle times have been correlated with lower detection sensitivity and increased variability. To address these concerns, we applied Compartmentalized Self Replication (CSR) to evolve faster-cycling mutants of Taq DNA polymerase. After five rounds of selection using progressively shorter PCR extension times, individual mutations identified in the fastest-cycling clones were randomly combined using ligation-based multi-site mutagenesis. The best-performing combinatorial mutants exhibit 35- to 90-fold higher affinity (lower Kd ) for primed template and a moderate (2-fold) increase in extension rate compared to wild-type Taq. Further characterization revealed that CSR-selected mutations provide increased resistance to inhibitors, and most notably, enable direct amplification from up to 65% whole blood. We discuss the contribution of individual mutations to fast-cycling and blood-resistant phenotypes.

Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

NASA Technical Reports Server (NTRS)

Kachare, A. H.; Hyland, S. L.; Garlick, G. F. J.

1981-01-01

The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

In situ 2D diffraction as a tool to characterize ferroelectric and piezoelectric thin films

NASA Astrophysics Data System (ADS)

Khamidy, N. I.; Kovacova, V.; Bernasconi, A.; Le Rhun, G.; Vaxelaire, N.

2017-08-01

In this paper the application of 2D x-ray diffraction (XRD2) as a technique to characterize in situ during electrical cycling the properties of a ferroelectric and piezoelectric thin film is discussed. XRD2 is one type of XRD on which a 2D detector is used instead of a point detector. This technique enables simultaneous recording of many sample information in a much shorter time compared to conventional XRD. The discussion is focused especially on the data processing technique of the huge data acquired. The methodology to calculate an effective piezoelectric coefficient, analyze the phase and texture, and estimate the domain size and shape is described in this paper. This methodology is then applied to a lead zirconate titanate (PZT) thin film at the morphotropic phase boundary (MPB) composition (i.e. Pb[Zr0.52Ti0.48]O3) with a preferred orientation of (1 0 0). The in situ XRD2 characterization was conducted in the European synchrotron radiation facility (ESRF) in Grenoble, France. Since a high-energy beam with vertical resolution as small as 100 nm was used, a cross-sectional scan of the sample was performed over the entire thickness of the film. From these experimental results, a better understanding on the piezoelectricity phenomena in PZT thin film at MPB composition were achieved, providing original feedback between the elaboration processes and functional properties of the film.

Growth temperature modulated phase evolution and functional characteristics of high quality Pb1-x Lax (Zr0.9Ti0.1)O3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Anuj; Pawar, Shuvam; Singh, Kirandeep; Kaur, Davinder

2018-05-01

In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1)O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 °C. We have investigated the structural, dielectric, ferroelectric and leakage current characteristics of these thin films. XRD patterns reveal that 600 °C is the optimized temperature to deposit highly (110) oriented perovskite phase PLZT thin film. The further increase in temperature (700 °) causes reappearance of additional peaks corresponding to lead deficient pyrochlore phase. All PLZT thin films show decrease in dielectric constant with frequency. However, PLZT thin film fabricated at 600 °C displays dielectric constant ˜532 at 1 MHz frequency which is relatively higher than other deposited thin films. The P-E loops of these PLZT thin films exhibit strong dependence on deposition temperature. The pure perovskite PZLT thin film shows saturation polarization of ˜51.2µC/cm2 and coercive field (2Ec) ˜67.85 kV/cm. These high quality PLZT thin films finds their applications in non-volatile memory and nano-electro-mechanical systems (NEMS).

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

The effects of a skeletal muscle titin mutation on walking in mice.

PubMed

Pace, Cinnamon M; Mortimer, Sarah; Monroy, Jenna A; Nishikawa, Kiisa C

2017-01-01

Titin contributes to sarcomere assembly, muscle signaling, and mechanical properties of muscle. The mdm mouse exhibits a small deletion in the titin gene resulting in dystrophic mutants and phenotypically normal heterozygotes. We examined the effects of this mutation on locomotion to assess how, and if, changes to muscle phenotype explain observed locomotor differences. Mutant mice are much smaller in size than their siblings and gait abnormalities may be driven by differences in limb proportions and/or by changes to muscle phenotype caused by the titin mutation. We quantified differences in walking gait among mdm genotypes and also determined whether genotypes vary in limb morphometrics. Mice were filmed walking, and kinematic and morphological variables were measured. Mutant mice had a smaller range of motion at the ankle, shorter stride lengths, and shorter stance duration, but walked at the same relative speeds as the other genotypes. Although phenotypically similar to wildtype mice, heterozygous mice frequently exhibited intermediate gait mechanics. Morphological differences among genotypes in hindlimb proportions were small and do not explain the locomotor differences. We suggest that differences in locomotion among mdm genotypes are due to changes in muscle phenotype caused by the titin mutation.

Probing Intrawire, Interwire, and Diameter-Dependent Variations in Silicon Nanowire Surface Trap Density with Pump-Probe Microscopy.

PubMed

Cating, Emma E M; Pinion, Christopher W; Christesen, Joseph D; Christie, Caleb A; Grumstrup, Erik M; Cahoon, James F; Papanikolas, John M

2017-10-11

Surface trap density in silicon nanowires (NWs) plays a key role in the performance of many semiconductor NW-based devices. We use pump-probe microscopy to characterize the surface recombination dynamics on a point-by-point basis in 301 silicon NWs grown using the vapor-liquid-solid (VLS) method. The surface recombination velocity (S), a metric of the surface quality that is directly proportional to trap density, is determined by the relationship S = d/4τ from measurements of the recombination lifetime (τ) and NW diameter (d) at distinct spatial locations in individual NWs. We find that S varies by as much as 2 orders of magnitude between NWs grown at the same time but varies only by a factor of 2 or three within an individual NW. Although we find that, as expected, smaller-diameter NWs exhibit shorter τ, we also find that smaller wires exhibit higher values of S; this indicates that τ is shorter both because of the geometrical effect of smaller d and because of a poorer quality surface. These results highlight the need to consider interwire heterogeneity as well as diameter-dependent surface effects when fabricating NW-based devices.

Anisotropy of the upper critical field and its thickness dependence in superconducting FeSe electric-double-layer transistors

NASA Astrophysics Data System (ADS)

Shiogai, Junichi; Kimura, Shojiro; Awaji, Satoshi; Nojima, Tsutomu; Tsukazaki, Atsushi

2018-05-01

Anisotropy of superconductivity is one of the fundamental physical parameters for understanding layered iron-based superconductors (IBSs). Here we investigated the anisotropic response of resistive transition as a function of thickness (d ) in iron selenide (FeSe) based electric-double-layer transistors (EDLTs) on SrTi O3 , which exhibit superconducting transition temperatures Tc as high as 40 K below d =10 nm . According to the analyses of the in-plane (Hc2 //) and out-of-plane (Hc2 ⊥) upper critical fields (Hc 2) and the magnetic field angle dependence of the resistance (Rs-θ ) in ultrathin condition, we found that the anisotropy factor ɛ0=Hc2 ///Hc2 ⊥ is 7.4 in the thin limit of d ˜1 nm , which is larger than that of bulk IBSs. In addition, we observed the shorter out-of-plane coherence length ξc of 0.19 nm compared to the c -axis lattice constant, which implies the confinement of the order parameter in the one unit cell FeSe. These findings suggest that high-Tc superconductivity in the ultrathin FeSe-EDLT exhibits an anisotropic three-dimensional (3D) or quasi-two-dimensional (2D) nature rather than the pure 2D one, leading to the robust superconductivity. Moreover, we carried out the systematic evaluation of the anisotropic Hc 2 against thickness reduction in the FeSe channel. The in-plane Hc 2 as a function of normalized temperature T /Tc is almost independent of d until the thin limit condition. On the other hand, the out-of-plane Hc 2 near T /Tc˜1 decreases with increasing d , resulting in the increase of ɛ0 at around Tc to 32.0 at the thick condition of d =9.3 nm , which is also confirmed by Rs-θ measurements. The counterintuitive behavior can be attributed to the degree of coupling strength between two electron-rich layers possessing a high superconducting order parameter induced by electrostatic gating at the top interface and charge transfer from SrTi O3 substrates at the bottom interface. Besides a large Hc2 ⊥ for d =9.3 nm exceeding 20 T even at T =0.8 Tc , we observe the decoupling crossover of the two superconducting layers at low temperature, which is a unique feature for the high-Tc FeSe-EDLT on SrTi O3 .

Plasmon Enhancement of Photoinduced Resistivity Changes in Bi1-xCaxMnO3 Thin Films

NASA Astrophysics Data System (ADS)

Smolyaninova, Vera; Talanova, E.; Kolagani, Rajeswari; Yong, G.; Kennedy, R.; Steger, M.; Wall, K.

2007-03-01

Doped rare-earth manganese oxides (manganites) exhibit a wide variety of physical phenomena due to complex interplay of electronic, magnetic, orbital, and structural degrees of freedom and their sensitivity to external fields. A photoinduced insulator to conductor transition in charge-ordered manganites is especially interesting from the point of view of creating photonic devices. Thin films of Bi0.4Ca0.6MnO3 exhibit large photoinduced resistivity changes associated with melting of the charge ordering by visible light [1]. We have found a considerable increase of the photoinduced resistivity changes in the Bi0.4Ca0.6MnO3 thin film after depositing metal nanoparticles on the surface. This increase can be explained by enhancement of local electromagnetic field in the vicinity of the gold nanoparticle due to the plasmon resonance. The changes in lifetime of the photoinduced state will be reported, and the possible origin of these effects will be discussed. [1] V. N. Smolyaninova at al., Appl. Phys. Lett. 86, 071922 (2005).

Paper-based transparent flexible thin film supercapacitors

NASA Astrophysics Data System (ADS)

Gao, Kezheng; Shao, Ziqiang; Wu, Xue; Wang, Xi; Zhang, Yunhua; Wang, Wenjun; Wang, Feijun

2013-05-01

Paper-based transparent flexible thin film supercapacitors were fabricated using CNF-[RGO]n hybrid paper as an electrode material and charge collector. Owing to the self-anti-stacking of distorted RGO nanosheets and internal electrolyte nanoscale-reservoirs, the device exhibited good electrochemical performance (about 1.73 mF cm-2), and a transmittance of about 56% (at 550 nm).Paper-based transparent flexible thin film supercapacitors were fabricated using CNF-[RGO]n hybrid paper as an electrode material and charge collector. Owing to the self-anti-stacking of distorted RGO nanosheets and internal electrolyte nanoscale-reservoirs, the device exhibited good electrochemical performance (about 1.73 mF cm-2), and a transmittance of about 56% (at 550 nm). Electronic supplementary information (ESI) available: Experimental, TEM image, IR spectra, and XRD spectra of cellulose nanofibers, TEM image, and XRD spectra of RGO, graphite, GO nanosheets, CNF paper, and CNF-[RGO]20 hybrid paper, high-resolution C1s spectra of GO, Raman spectra of GO nanosheets, cross-sectional FESEM image of CNF-[RGO]20 hybrid paper and stress-strain curve of T-SC-20. See DOI: 10.1039/c3nr00674c

Tracking metal ions with polypyrrole thin films adhesively bonded to diazonium-modified flexible ITO electrodes.

PubMed

Lo, Momath; Diaw, Abdou K D; Gningue-Sall, Diariatou; Aaron, Jean-Jacques; Oturan, Mehmet A; Chehimi, Mohamed M

2018-05-09

Adhesively bonded polypyrrole thin films doped with benzene sulfonic acid (BSA) were electrodeposited on aminobenzenediazonium-modified flexible ITO electrodes and further employed for the detection of Pb 2+ , Cu 2+ , and Cd 2+ metal ions in aqueous medium. The aminophenyl (AP) adhesive layer was grafted to ITO by electroreduction of the in situ generated parent diazonium compound. Polypyrrole (PPy) thin films exhibited remarkable adhesion to aminophenyl (ITO-AP). The strongly adherent polypyrrole films exhibited excellent electroactivity in the doped state with BSA which itself served to chelate the metal ions in aqueous medium. The surface of the resulting, modified flexible electrode was characterized by XPS, SEM, and electrochemical methods. The ITO-AP-PPy electrodes were then used for the simultaneous detection of Cu 2+ , Cd 2+ , and Pb 2+ by differential pulse voltammetry (DPV). The detection limits were 11.1, 8.95, and 0.99 nM for Cu 2+ , Cd 2+ , and Pb 2+ , respectively. In addition, the modified electrodes displayed a good reproducibility, making them suitable for the determination of heavy metals in real wastewater samples.

Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

PubMed

Papadimitropoulos, G; Davazoglou, D

2011-09-01

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

Beauty and thinness messages in children's media: a content analysis.

PubMed

Herbozo, Sylvia; Tantleff-Dunn, Stacey; Gokee-Larose, Jessica; Thompson, J Kevin

2004-01-01

Research suggests that young children have body image concerns, such as a desire for thinness and an avoidance of obesity. Surprisingly, few studies have investigated how children's body preferences and stereotypes are influenced by media aimed at children. In order to gain a better understanding of the content of such media, a content analysis was used to examine body image-related messages in popular children's videos and books. Results indicated that messages emphasizing the importance of physical appearance and portraying body stereotypes are present in many children's videos but relatively few books. Of the videos examined, the ones that exhibited the most body image-related messages were Cinderella and The Little Mermaid. Indian in the Cupboard and ET were the videos with the least number of body image-related messages. Of the books studied, the one with the highest number of body image-related messages was Rapunzel. Ginger and The Stinky Cheese Man were the only books studied that did not exhibit body image-related messages. Implications of an association of beauty and thinness in children's media are explored.

Effect of Gd3+ Ions on the Thermal Behavior, Optical, Electrical and Magnetic Properties of PbS Thin Films

NASA Astrophysics Data System (ADS)

Ravishankar, S.; Balu, A. R.; Nagarethinam, V. S.

2018-02-01

This paper reports the effect of Gd doping concentration on the thermal behavior, structural, morphological, optical, electrical and magnetic properties of PbS thin films. Gd doping concentration in PbS was varied as 0 wt.%, 1 wt.%, 2 wt.%, 3 wt.% and 4 wt.%, respectively. Thermogravimetric-Differential Thermal Analysis curves confirm that both the undoped and doped films become well crystallized above 354°C and 342°C, respectively. X-ray diffraction studies confirm that all the films exhibit face-centered cubic crystal structure with a strong (2 0 0) preferential growth. Undoped films exhibit triangular-shaped grains which modify to small cuboids with Gd doping. Energy dispersive x-ray spectra confirm the presence of Gd in the doped films. Transmission electron microscopy images confirm the presence of nanosized grains for both the undoped and doped films. The doped films showed increased transparency and improved magnetic behaviour. The results obtained confirm that Gd3+, a rare earth ion, strongly influences the physical properties of PbS thin films to a large extent.

Weak magnetism of Aurivillius-type multiferroic thin films probed by polarized neutron reflectivity

NASA Astrophysics Data System (ADS)

Zhai, Xiaofang; Grutter, Alexander J.; Yun, Yu; Cui, Zhangzhang; Lu, Yalin

2018-04-01

Unambiguous magnetic characterization of room-temperature multiferroic materials remains challenging due in part to the difficulty of distinguishing their very weak ferromagnetism from magnetic impurity phases and other contaminants. In this study, we used polarized neutron reflectivity to probe the magnetization of B i6FeCoT i3O18 and LaB i5FeCoT i3O18 in their epitaxial thin films while eliminating a variety of impurity contributions. Our results show that LaB i5FeCoT i3O18 exhibits a magnetization of about 0.016 ±0.027 μB/Fe -Co pair at room temperature, while the B i6FeCoT i3O18 thin film only exhibits a weak magnetic moment below room temperature, with a saturation magnetization of 0.049 ±0.015 μB/Fe -Co pair at 50 K. This polarized-neutron-reflectivity study places an upper magnetization limit on the matrix material of the magnetically doped Aurivillius oxides and helps to clarify the true mechanism behind the room-temperature magnetic performance.

Faraday Wave Turbulence on a Spherical Liquid Shell

NASA Technical Reports Server (NTRS)

Holt, R. Glynn; Trinh, Eugene H.

1996-01-01

Millimeter-radius liquid shells are acoustically levitated in an ultrasonic field. Capillary waves are observed on the shells. At low energies (minimal acoustic amplitude, thick shell) a resonance is observed between the symmetric and antisymmetric thin film oscillation modes. At high energies (high acoustic pressure, thin shell) the shell becomes fully covered with high-amplitude waves. Temporal spectra of scattered light from the shell in this regime exhibit a power-law decay indicative of turbulence.

Shear thinning of the Lennard-Jones fluid by molecular dynamics

NASA Astrophysics Data System (ADS)

Heyes, David M.

1985-11-01

Extensive Molecular Dynamics, MD, calculations of the Lennard-Jones, LJ, rheological equation of state have been made. Non-equilibrium MD permits evaluation of shear thinning of the dense LJ liquid which adheres in behaviour quite closely with that of more complex “real molecules”. However, quantitative correspondence with simple analytic formulae for non-Newtonian behaviour used in the treatment of experimental data is hindered by poor prediction of certain key parameters. For example, at low shear rates, the equilibrium Newtonian viscosity and, at high shear rates, a limiting shear stress are often required. Both are difficult to obtain by simulation in the portion of the LJ phase diagram which exhibits significant shear thinning and using present techniques. Suggestions for improving the Eyring model for shear thinning are made.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

PubMed

Song, Wooseok; Kwon, Soon Yeol; Myung, Sung; Jung, Min Wook; Kim, Seong Jun; Min, Bok Ki; Kang, Min-A; Kim, Sung Ho; Lim, Jongsun; An, Ki-Seok

2014-02-11

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Sha Li, Chen; Li, Yu Ning; Wu, Yi Liang; Ong, Beng S.; Loutfy, Rafik O.

2008-06-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

PubMed

Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

2016-07-07

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

NASA Astrophysics Data System (ADS)

Demidov, E. V.; Grabov, V. M.; Komarov, V. A.; Kablukova, N. S.; Krushel'nitskii, A. N.

2018-03-01

The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

Neuromorphic transistor achieved by redox reaction of WO3 thin film

NASA Astrophysics Data System (ADS)

Tsuchiya, Takashi; Jayabalan, Manikandan; Kawamura, Kinya; Takayanagi, Makoto; Higuchi, Tohru; Jayavel, Ramasamy; Terabe, Kazuya

2018-04-01

An all-solid-state neuromorphic transistor composed of a WO3 thin film and a proton-conducting electrolyte was fabricated for application to next-generation information and communication technology including artificial neural networks. The drain current exhibited a 4-order-of-magnitude increment by redox reaction of the WO3 thin film owing to proton migration. Learning and forgetting characteristics were well tuned by the gate control of WO3 redox reactions owing to the separation of the current reading path and pulse application path in the transistor structure. This technique should lead to the development of versatile and low-power-consumption neuromorphic devices.

Biochemical characterization of the THIN-B metallo-beta-lactamase of Janthinobacterium lividum.

PubMed

Docquier, Jean-Denis; Lopizzo, Teresa; Liberatori, Sabrina; Prenna, Manuela; Thaller, Maria Cristina; Frère, Jean-Marie; Rossolini, Gian Maria

2004-12-01

The THIN-B metallo-beta-lactamase, a subclass B3 enzyme produced by the environmental species Janthinobacterium lividum, was overproduced in Escherichia coli by means of a T7-based expression system. The enzyme was purified (>95%) by two ion-exchange chromatography steps and subjected to biochemical analysis. The native THIN-B enzyme is a monomeric protein of 31 kDa. It exhibits the highest catalytic efficiencies with carbapenem substrates and cephalosporins, except for cephaloridine, which acts as a poor inactivator. Individual rate constants for inactivation by chelators were measured, suggesting that inactivation occurred by a mechanism involving formation of a ternary complex.

Biochemical Characterization of the THIN-B Metallo-β-Lactamase of Janthinobacterium lividum

PubMed Central

Docquier, Jean-Denis; Lopizzo, Teresa; Liberatori, Sabrina; Prenna, Manuela; Thaller, Maria Cristina; Frère, Jean-Marie; Rossolini, Gian Maria

2004-01-01

The THIN-B metallo-β-lactamase, a subclass B3 enzyme produced by the environmental species Janthinobacterium lividum, was overproduced in Escherichia coli by means of a T7-based expression system. The enzyme was purified (>95%) by two ion-exchange chromatography steps and subjected to biochemical analysis. The native THIN-B enzyme is a monomeric protein of 31 kDa. It exhibits the highest catalytic efficiencies with carbapenem substrates and cephalosporins, except for cephaloridine, which acts as a poor inactivator. Individual rate constants for inactivation by chelators were measured, suggesting that inactivation occurred by a mechanism involving formation of a ternary complex. PMID:15561856

Domain switching of fatigued ferroelectric thin films

NASA Astrophysics Data System (ADS)

Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

2014-05-01

We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

NASA Astrophysics Data System (ADS)

Lee, K.; Lee, T. Y.; Yang, S. M.; Lee, D. H.; Park, J.; Chae, S. C.

2018-05-01

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures.

High pressure mechanical seal

NASA Technical Reports Server (NTRS)

Babel, Henry W. (Inventor); Anderson, Raymond H. (Inventor)

1996-01-01

A relatively impervious mechanical seal is formed between the outer surface of a tube and the inside surface of a mechanical fitting of a high pressure fluid or hydraulic system by applying a very thin soft metal layer onto the outer surface of the hard metal tube and/or inner surface of the hard metal fitting. The thickness of such thin metal layer is independent of the size of the tube and/or fittings. Many metals and alloys of those metals exhibit the requisite softness, including silver, gold, tin, platinum, indium, rhodium and cadmium. Suitably, the coating is about 0.0025 millimeters (0.10 mils) in thickness. After compression, the tube and fitting combination exhibits very low leak rates on the order or 10.sup.-8 cubic centimeters per second or less as measured using the Helium leak test.

Thiophene fused azacoronenes: regioselective synthesis, self organization, charge transport, and its incorporation in conjugated polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yi; He, Bo

A regioselective synthesis of an azacoronene fused with two peripheral thiophene groups has been realized through a concise synthetic route. The resulting thienoazacoronene (TAC) derivatives show high degree of self-organization in solution, in single crystals, in the bulk, and in spuncast thin films. Spuncast thin film field-effect transistors of the TACs exhibited mobilities up to 0.028 cm.sup.2V.sup.-1 S.sup.-1, which is among the top field effect mobilities for solution processed discotic materials. Organic photovoltaic devices using TAC-containing conjugated polymers as the donor material exhibited a high open-circuit voltage of 0.89 V, which was ascribable to TAC's low-lying highest occupied molecular orbitalmore » energy level.« less

Atomically thin two-dimensional organic-inorganic hybrid perovskites.

PubMed

Dou, Letian; Wong, Andrew B; Yu, Yi; Lai, Minliang; Kornienko, Nikolay; Eaton, Samuel W; Fu, Anthony; Bischak, Connor G; Ma, Jie; Ding, Tina; Ginsberg, Naomi S; Wang, Lin-Wang; Alivisatos, A Paul; Yang, Peidong

2015-09-25

Organic-inorganic hybrid perovskites, which have proved to be promising semiconductor materials for photovoltaic applications, have been made into atomically thin two-dimensional (2D) sheets. We report the solution-phase growth of single- and few-unit-cell-thick single-crystalline 2D hybrid perovskites of (C4H9NH3)2PbBr4 with well-defined square shape and large size. In contrast to other 2D materials, the hybrid perovskite sheets exhibit an unusual structural relaxation, and this structural change leads to a band gap shift as compared to the bulk crystal. The high-quality 2D crystals exhibit efficient photoluminescence, and color tuning could be achieved by changing sheet thickness as well as composition via the synthesis of related materials. Copyright © 2015, American Association for the Advancement of Science.

Activity in the ferret: oestradiol effects and circadian rhythms

NASA Technical Reports Server (NTRS)

Stockman, E. R.; Albers, H. E.; Baum, M. J.; Wurtman, R. J. (Principal Investigator)

1985-01-01

The present study was conducted to determine whether oestradiol increases activity in the European ferret (Mustela furo), whether this effect is sexually dimorphic, and whether a 24-h rhythm is present in the ferret's daily activity. The activity of male and female adult, postpubertally gonadectomized ferrets was monitored while they were maintained singly on a 13:11 light-dark cycle, before and after implantation with oestradiol-17 beta. Gonadectomized male and female ferrets exhibited equal levels of activity, and neither sex exhibited a significant change in activity following oestradiol implantation. None of the ferrets exhibited a strong circadian rhythm, although weak 24-h rhythms and shorter harmonic rhythms were present. Golden hamsters (Mesocricetus auratus), monitored in an identical manner, exhibited strong circadian rhythms. It was concluded that oestradiol administration may not cause an increase in activity in the ferret, and that this species lacks a strong circadian activity rhythm.

High-speed nanoscale characterization of dewetting via dynamic transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hihath, Sahar; Department of Physics, University of California, Davis, 1 Shields Ave., Davis, California 95616; Santala, Melissa K.

The dewetting of thin films can occur in either the solid or the liquid state for which different mass transport mechanisms are expected to control morphological changes. Traditionally, dewetting dynamics have been examined on time scales between several seconds to hours, and length scales ranging between nanometers and millimeters. The determination of mass transport mechanisms on the nanoscale, however, requires nanoscale spatial resolution and much shorter time scales. This study reports the high-speed observation of dewetting phenomena for kinetically constrained Ni thin films on crystalline SrTiO{sub 3} substrates. Movie-mode Dynamic Transmission Electron Microscopy (DTEM) was used for high-speed image acquisitionmore » during thin film dewetting at different temperatures. DTEM imaging confirmed that the initial stages of film agglomeration include edge retraction, hole formation, and growth. Finite element modeling was used to simulate temperature distributions within the DTEM samples after laser irradiation with different energies. For pulsed laser irradiation at 18 μJ, experimentally observed hole growth suggests that Marangoni flow dominates hole formation in the liquid nickel film. After irradiation with 13.8 μJ, however, the observations suggest that dewetting was initiated by nucleation of voids followed by hole growth through solid-state surface diffusion.« less

Stretchable, adhesive and ultra-conformable elastomer thin films.

PubMed

Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

2016-11-16

Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (T g ). In this paper, we report that free-standing polystyrene (PS, T g : 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, T g : -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (R a = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

High-Throughput Image Analysis of Fibrillar Materials: A Case Study on Polymer Nanofiber Packing, Alignment, and Defects in Organic Field Effect Transistors.

PubMed

Persson, Nils E; Rafshoon, Joshua; Naghshpour, Kaylie; Fast, Tony; Chu, Ping-Hsun; McBride, Michael; Risteen, Bailey; Grover, Martha; Reichmanis, Elsa

2017-10-18

High-throughput discovery of process-structure-property relationships in materials through an informatics-enabled empirical approach is an increasingly utilized technique in materials research due to the rapidly expanding availability of data. Here, process-structure-property relationships are extracted for the nucleation, growth, and deposition of semiconducting poly(3-hexylthiophene) (P3HT) nanofibers used in organic field effect transistors, via high-throughput image analysis. This study is performed using an automated image analysis pipeline combining existing open-source software and new algorithms, enabling the rapid evaluation of structural metrics for images of fibrillar materials, including local orientational order, fiber length density, and fiber length distributions. We observe that microfluidic processing leads to fibers that pack with unusually high density, while sonication yields fibers that pack sparsely with low alignment. This is attributed to differences in their crystallization mechanisms. P3HT nanofiber packing during thin film deposition exhibits behavior suggesting that fibers are confined to packing in two-dimensional layers. We find that fiber alignment, a feature correlated with charge carrier mobility, is driven by increasing fiber length, and that shorter fibers tend to segregate to the buried dielectric interface during deposition, creating potentially performance-limiting defects in alignment. Another barrier to perfect alignment is the curvature of P3HT fibers; we propose a mechanistic simulation of fiber growth that reconciles both this curvature and the log-normal distribution of fiber lengths inherent to the fiber populations under consideration.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

DOEpatents

Rogers, John A; Cao, Qing; Alam, Muhammad; Pimparkar, Ninad

2015-02-03

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Magneto-optical Kerr rotation and color in ultrathin lossy dielectric

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Hai; Qu, Xin; Zhou, Yun song; Li, Li na

2017-05-01

Ultra-thin optical coating comprising nanometer-thick silicon absorbing films on iron substrates can display strong optical interference effects. A resonance peak of ∼1.6^\\circ longitudinal Kerr rotation with the silicon thickness of ∼47 \\text{nm} was found at the wavelength of 660 nm. The optical properties of silicon thin films were well controlled by the sputtering power. Non-iridescence color exhibition and Kerr rotation enhancement can be manipulated and encoded individually.

MOFs for the Sensitive Detection of Ammonia: Deployment of fcu-MOF Thin Films as Effective Chemical Capacitive Sensors.

PubMed

Assen, Ayalew H; Yassine, Omar; Shekhah, Osama; Eddaoudi, Mohamed; Salama, Khaled N

2017-09-22

This work reports on the fabrication and deployment of a select metal-organic framework (MOF) thin film as an advanced chemical capacitive sensor for the sensing/detection of ammonia (NH 3 ) at room temperature. Namely, the MOF thin film sensing layer consists of a rare-earth (RE) MOF (RE-fcu-MOF) deposited on a capacitive interdigitated electrode (IDE). Purposely, the chemically stable naphthalene-based RE-fcu-MOF (NDC-Y-fcu-MOF) was elected and prepared/arranged as a thin film on a prefunctionalized capacitive IDE via the solvothermal growth method. Unlike earlier realizations, the fabricated MOF-based sensor showed a notable detection sensitivity for NH 3 at concentrations down to 1 ppm, with a detection limit appraised to be around 100 ppb (at room temperature) even in the presence of humidity and/or CO 2 . Distinctly, the NDC-Y-fcu-MOF based sensor exhibited the required stability to NH 3 , in contrast to other reported MOFs, and a remarkable detection selectivity toward NH 3 vs CH 4 , NO 2 , H 2 , and C 7 H 8 . The NDC-Y-fcu-MOF based sensor exhibited excellent performance for sensing ammonia for simulated breathing system in the presence of the mixture of carbon dioxide and/or humidity (water vapor), with no major alteration in the detection signal.

SYNTHESIS of MOLECULE/POLYMER-BASED MAGNETIC MATERIALS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Joel S.

2016-02-01

We have synthesized and characterized several families of organic-based magnets, a new area showing that organic species can exhibit the technologically important property of magnetic ordering. Thin film magnets with ordering temperatures exceeding room temperature have been exceeded. Hence, organic-based magnets represent a new class of materials that exhibit magnetic ordering and do not require energy-intensive metallurgical processing and are based upon Earth-abundant elements.

Shorter telomere length in peripheral blood lymphocytes of workers exposed to polycyclic aromatic hydrocarbons.

PubMed

Pavanello, Sofia; Pesatori, Angela-C; Dioni, Laura; Hoxha, Mirjam; Bollati, Valentina; Siwinska, Ewa; Mielzyńska, Danuta; Bolognesi, Claudia; Bertazzi, Pier-Alberto; Baccarelli, Andrea

2010-02-01

Shorter telomere length (TL) in peripheral blood lymphocytes (PBLs) is predictive of lung cancer risk. Polycyclic aromatic hydrocarbons (PAHs) are established lung carcinogens that cause chromosome instability. Whether PAH exposure and its molecular effects are linked with shorter TL has never been evaluated. In the present study, we investigated the effect of chronic exposure to PAHs on TL measured in PBLs of Polish male non-current smoking cokeoven workers and matched controls. PAH exposure and molecular effects were characterized using measures of internal dose (urinary 1-pyrenol), effective dose [anti-benzo[a]pyrene diolepoxide (anti-BPDE)-DNA adduct], genetic instability (micronuclei, MN) and DNA methylation [p53 promoter and Alu and long interspersed nuclear element-1 (LINE-1) repetitive elements, as surrogate measures of global methylation] in PBLs. TL was measured by real-time polymerase chain reaction. Cokeoven workers were heavily exposed to PAHs (79% exceeded the urinary 1-pyrenol biological exposure index) and exhibited lower TL (P = 0.038) than controls, as well as higher levels of genetic and chromosomal alterations [i.e. anti-BPDE-DNA adduct and MN (P < 0.0001)] and epigenetic changes [i.e. p53 gene-specific promoter and global methylation (P

Shorter telomere length in peripheral blood lymphocytes of workers exposed to polycyclic aromatic hydrocarbons

PubMed Central

Pavanello, Sofia; Pesatori, Angela-C.; Dioni, Laura; Hoxha, Mirjam; Bollati, Valentina; Siwinska, Ewa; Mielzyńska, Danuta; Bolognesi, Claudia; Bertazzi, Pier-Alberto; Baccarelli, Andrea

2010-01-01

Shorter telomere length (TL) in peripheral blood lymphocytes (PBLs) is predictive of lung cancer risk. Polycyclic aromatic hydrocarbons (PAHs) are established lung carcinogens that cause chromosome instability. Whether PAH exposure and its molecular effects are linked with shorter TL has never been evaluated. In the present study, we investigated the effect of chronic exposure to PAHs on TL measured in PBLs of Polish male non-current smoking cokeoven workers and matched controls. PAH exposure and molecular effects were characterized using measures of internal dose (urinary 1-pyrenol), effective dose [anti-benzo[a]pyrene diolepoxide (anti-BPDE)–DNA adduct], genetic instability (micronuclei, MN) and DNA methylation [p53 promoter and Alu and long interspersed nuclear element-1 (LINE-1) repetitive elements, as surrogate measures of global methylation] in PBLs. TL was measured by real-time polymerase chain reaction. Cokeoven workers were heavily exposed to PAHs (79% exceeded the urinary 1-pyrenol biological exposure index) and exhibited lower TL (P = 0.038) than controls, as well as higher levels of genetic and chromosomal alterations [i.e. anti-BPDE–DNA adduct and MN (P < 0.0001)] and epigenetic changes [i.e. p53 gene-specific promoter and global methylation (P ≤ 0.001)]. TL decreased with longer duration of work as cokeoven worker (P = 0.039) and in all subjects with higher levels of anti-BPDE–DNA adduct (P = 0.042), p53 hypomethylation (P = 0.005) and MN (P = 0.009). In multivariate analysis, years of work in cokery (P = 0.008) and p53 hypomethylation (P = 0.001) were the principal determinants of shorter TL. Our results indicate that shorter TL is associated with chronic PAH exposure. The interrelations with other genetic and epigenetic mechanisms in our data suggest that shorter TL could be a central event in PAH carcinogenesis. PMID:19892797

VUV lithography

DOEpatents

George, Edward V.; Oster, Yale; Mundinger, David C.

1990-01-01

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

Microchannel Distillation of JP-8 Jet Fuel for Sulfur Content Reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Feng; Stenkamp, Victoria S.; TeGrotenhuis, Ward E.

2006-09-16

In microchannel based distillation processes, thin vapor and liquid films are contacted in small channels where mass transfer is diffusion-limited. The microchannel architecture enables improvements in distillation processes. A shorter height equivalent of a theoretical plate (HETP) and therefore a more compact distillation unit can be achieved. A microchannel distillation unit was used to produce a light fraction of JP-8 fuel with reduced sulfur content for use as feed to produce fuel-cell grade hydrogen. The HETP of the microchannel unit is discussed, as well as the effects of process conditions such as feed temperature, flow rate, and reflux ratio.

Synthesis of diketopyrrolopyrrole-based polymers with polydimethylsiloxane side chains and their application in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Ohnishi, Inori; Hashimoto, Kazuhito; Tajima, Keisuke

2018-03-01

Linear polydimethylsiloxane (PDMS) was investigated as a solubilizing group for π-conjugated polymers with the aim of combining high solubility in organic solvents with the molecular packing in solid films that is advantageous for charge transport. Diketopyrrolopyrrole-based copolymers with different contents and substitution patterns of the PDMS side chains were synthesized and evaluated for application in organic field-effect transistors. The PDMS side chains greatly increased the solubility of the polymers and led to shorter d-spacings of the π-stacking in the thin films compared with polymers containing conventional branched alkyl side chains.

Graphene-Based Systems for Energy Storage

NASA Technical Reports Server (NTRS)

Calle, Carlos I.; Mackey, Paul J.; Johansen, Michael R.; Phillips, James, III; Hogue, Michael; Kaner, Richard B.; El-Kady, Maher

2016-01-01

Development of graphene-based energy storage devices based on the Laser Scribe system developed by the University of California Los Angeles. These devices These graphene-based devices store charge on graphene sheets and take advantage of the large accessible surface area of graphene (2,600 m2g) to increase the electrical energy that can be stored. The proposed devices should have the electrical storage capacity of thin-film-ion batteries but with much shorter charge discharge cycle times as well as longer lives The proposed devices will be carbon-based and so will not have the same issues with flammability or toxicity as the standard lithium-based storage cells.

Fabrication of gradient optical filter containing anisotropic Bragg nanostructure.

PubMed

Cho, Bomin; Um, Sungyong; Woo, Hee-Gweon; Sohn, Honglae

2011-08-01

New gradient optical filters containing asymmetric Bragg structure were prepared from the distributed Bragg reflector (DBR) porous silicon (PSi). Anisotropic DBR PSi displaying a rainbow-colored reflection was generated by using an asymmetric etching configuration. Flexible anisotropic DBR PSi composite films were obtained by casting of polymer solution onto anisotropic DBR PSi thin films. The surface and cross-sectional images images of anisotropic DBR PSi composite films obtained with cold field emission scanning electron microscope indicated that the average pore size and the thickness of porous layer decreased as the lateral distance increased. As lateral distance increased, the reflection resonance shifted to shorter wavelength.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer

NASA Astrophysics Data System (ADS)

Yeon, Seongjin; Seo, Kwangseok

2008-04-01

We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate-channel distance (dGC) in the epitaxial structure, a channel aspect ratio (ARC) of over three was achieved when Lg was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, Gm of 1.5 S/mm, and fT of 490 GHz.

Sensing of volatile organic compounds by copper phthalocyanine thin films

NASA Astrophysics Data System (ADS)

Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

2017-02-01

Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Al decorated ZnO thin-film photoanode for SPR-enhanced photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Li, Hongxia; Li, Xin; Dong, Wei; Xi, Junhua; Wu, Xin

2018-06-01

Photoelectrochemical (PEC) water splitting has been considered to be a promising approach to ease the energy and environmental crisis. Herein, Al decorated ZnO thin films are successfully achieved through a facile dc magnetron-sputtering method followed with Al evaporation for further enhanced PEC performance. The Al/ZnO thin film with 60 s Al evaporating time exhibits the highest photocurrent density under AM1.5G and visible light irradiation, which are more than 5 and 3 times as the pure ZnO film, respectively. Such surface modification by Al not only enlarges the visible light absorption based on surface plasmonic resonance effect, but facilitates the charge separation and transportation at the electrode/electrolyte interface. Finally, a possible mechanism is proposed for the photocatalytic activity enhancement of Al/ZnO thin film photoanode.

High-mobility ambipolar ZnO-graphene hybrid thin film transistors

PubMed Central

Song, Wooseok; Kwon, Soon Yeol; Myung, Sung; Jung, Min Wook; Kim, Seong Jun; Min, Bok Ki; Kang, Min-A; Kim, Sung Ho; Lim, Jongsun; An, Ki-Seok

2014-01-01

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm2/V·s, and a high on-off ratio of 105. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs. PMID:24513629

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao

With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. Themore » wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.« less

Enhanced optical band-gap of ZnO thin films by sol-gel technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.

2016-05-06

Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The resultsmore » of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.« less

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

PubMed

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3 Dye-Sensitized Solar Cell

PubMed Central

Mahalingam, S.; Abdullah, H.; Shaari, S.; Muchtar, A.; Asshari, I.

2015-01-01

Indium oxide (In2O3) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In2O3 thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In2O3 thin films. The structural and morphological characteristics of In2O3 thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In2O3 thin films viewed through FESEM images. The In2O3-450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In2O3-450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC. PMID:26146652

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

NASA Astrophysics Data System (ADS)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

2018-06-01

The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

Effect of dead layer and strain on diffuse phase transition of PLZT relaxor thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, S.; Narayanan, M.; Ma, B.

2011-02-01

Bulk relaxor ferroelectrics exhibit excellent permittivity compared to their thin film counterpart, although both show diffuse phase transition (DPT) behavior unlike normal ferroelectrics. To better understand the effect of dead layer and strain on the observed anomaly in the dielectric properties, we have developed relaxor PLZT (lead lanthanum zirconate titanate) thin films with different thicknesses and measured their dielectric properties as a function of temperature and frequency. The effect of dead layer on thin film permittivity has been found to be independent of temperature and frequency, and is governed by the Schottky barrier between the platinum electrode and PLZT. Themore » total strain (thermal and intrinsic) in the film majorly determines the broadening, dielectric peak and temperature shift in the relaxor ferroelectric. The Curie-Weiss type law for relaxors has been further modified to incorporate these two effects to accurately predict the DPT behavior of thin film and bulk relaxor ferroelectrics. The dielectric behavior of thin film is predicted by using the bulk dielectric data from literature in the proposed equation, which agree well with the measured dielectric behavior.« less

Optical properties and crystallinity of silver mirrors under a 35 krad cobalt-60 radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiu, Po-Kai, E-mail: pkchiu@itrc.narl.org.tw; Chiang, Donyau; Lee, Chao-Te

2015-09-15

This study addresses the effects of thin film optical design and environmental radiation on the optical properties of silver mirrors. Different experimental thin film optical designs are selected, and the film stack is built using Macleod's approach. Mirror elements are exposed to the same dose of radiation and their properties are characterized using a spectrophotometer equipped with an integration sphere and an x-ray diffractometer. Spectrophotometric analyses of mirrors exposed to about 35 krad of {sup 60}Co radiations overall show that the B270 glass substrates coated with titanium oxide (TiO{sub 2}), silicon dioxide (SiO{sub 2}), pure chrome, and pure silver effectivelymore » reduces radiation damage. The absorption spectrum of the TiO{sub 2} film in the visible region decreases after radiation and displays drifting. As thin metal films comparison, the silver thin film exhibits higher radiation resistance than the chrome thin film. The x-ray diffraction analysis on metal film layers reveals that crystallinity slightly increases when the silver thin film is irradiated.« less

Enhanced electrical properties in solution-processed InGaZnO thin-film transistors by viable hydroxyl group transfer process

NASA Astrophysics Data System (ADS)

Kim, Do-Kyung; Jeong, Hyeon-Seok; Kwon, Hyeok Bin; Kim, Young-Rae; Kang, Shin-Won; Bae, Jin-Hyuk

2018-05-01

We propose a simple hydroxyl group transfer method to improve the electrical characteristics of solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs). Tuned poly(dimethylsiloxane) elastomer, which has a hydroxyl group as a terminal chemical group, was adhered temporarily to an IGZO thin-film during the solidification step to transfer and supply sufficient hydroxyl groups to the IGZO thin-film. The transferred hydroxyl groups led to efficient hydrolysis and condensation reactions, resulting in a denser metal–oxygen–metal network being achieved in the IGZO thin-film compared to the conventional IGZO thin-film. In addition, it was confirmed that there was no morphological deformation, including to the film thickness and surface roughness. The hydroxyl group transferred IGZO based TFTs exhibited enhanced electrical properties (field-effect mobility of 2.21 cm2 V‑1 s‑1, and on/off current ratio of 106) compared to conventional IGZO TFTs (field-effect mobility of 0.73 cm2 V‑1 s‑1 and on/off current ratio of 105).

Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Effects of bacteria on CdS thin films used in technological devices

NASA Astrophysics Data System (ADS)

Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

2017-04-01

Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

Glass transition dynamics of stacked thin polymer films

NASA Astrophysics Data System (ADS)

Fukao, Koji; Terasawa, Takehide; Oda, Yuto; Nakamura, Kenji; Tahara, Daisuke

2011-10-01

The glass transition dynamics of stacked thin films of polystyrene and poly(2-chlorostyrene) were investigated using differential scanning calorimetry and dielectric relaxation spectroscopy. The glass transition temperature Tg of as-stacked thin polystyrene films has a strong depression from that of the bulk samples. However, after annealing at high temperatures above Tg, the stacked thin films exhibit glass transition at a temperature almost equal to the Tg of the bulk system. The α-process dynamics of stacked thin films of poly(2-chlorostyrene) show a time evolution from single-thin-film-like dynamics to bulk-like dynamics during the isothermal annealing process. The relaxation rate of the α process becomes smaller with increase in the annealing time. The time scale for the evolution of the α dynamics during the annealing process is very long compared with that for the reptation dynamics. At the same time, the temperature dependence of the relaxation time for the α process changes from Arrhenius-like to Vogel-Fulcher-Tammann dependence with increase of the annealing time. The fragility index increases and the distribution of the α-relaxation times becomes smaller with increase in the annealing time for isothermal annealing. The observed change in the α process is discussed with respect to the interfacial interaction between the thin layers of stacked thin polymer films.

Regeneration of a coastal pine (Pinus thunbergii Parl.) forest 11 years after thinning, Niigata, Japan.

PubMed

Zhu, Jiaojun; Gonda, Yutaka; Yu, Lizhong; Li, Fengqin; Yan, Qiaoling; Sun, Yirong

2012-01-01

To examine the effects of thinning intensity on wind vulnerability and regeneration in a coastal pine (Pinus thunbergii) forest, thinning with intensities of 20%, 30% and 50% was conducted in December 1997; there was an unthinned treatment as the control (total 8 stands). We re-measured the permanent sites to assess the regeneration characteristics 11 years after thinning. In the 50% thinned stand, seedlings aged from 2 to 10 years exhibited the highest pine seedling density and growth. The age composition ranged from 1-3 years with densities of 9.9 and 5.1 seedlings m(-2) in 30% and 20% thinned stands; only 1-year-old seedlings with a density of 6.1 seedlings m(-2) in the unthinned stand. Similar trends were found for the regeneration of broadleaved species such as Robinia pseudoacacia and Prunus serrulata. We speculate that the canopy openness and moss coverage contributed to the regeneration success in the 50% thinned stand, while the higher litter depth and lack of soil moisture induced the regeneration failure in the unthinned stand. The stands thinned at 20% or 30% were less favourable for pine regeneration than the stands thinned at 50%. Therefore, thinning with less than 30% canopy openness (20% and 30% thinned stands) should be avoided, and thinning at higher than 30% canopy openness (50% thinned stand, approximately 1500 stems ha(-1) at ages 40-50 years) is suggested for increasing regeneration in the coastal pine forest. The implications of thinning-based silviculture in the coastal pine forest management are also discussed. The ongoing development of the broadleaved seedlings calls for further observations.

Phase Transitions and Domain Structure in Mixed Tetragonal-Rhombohedral BiFeO3 thin films using Raman Spectroscopy and Nonlinear Optics

NASA Astrophysics Data System (ADS)

Vlahos, E.; Kumar, A.; Denev, S.; Melville, A.; Adamo, C.; Ihlefeld, J. F.; Sheng, G.; Zeches, R. J.; Zhang, J. X.; He, Q.; Yang, C. H.; Erni, R.; Rossell, M. D.; J, A.; Hatt; Chu, Y.-H.; Wang, C. H.; Ederer, C.; Gopalan, V.; Chen, L. Q.; Schlom, D. G.; Spaldin, N. A.; Martin, L. W.; Ramesh, R.; Tenne, Dmitri

2010-03-01

We have shown that biaxially strained BiFeO3 thin films can undergo an isosymmetric phase transition from a rhombohedral-like to a tetragonal-like phase. This talk discusses the evolution of the tetragonal and the mixed phases in BiFeO3/YAlO3 thin films with varying film thickness using optical second harmonic generation (SHG) and Raman spectroscopy. 25nm, 75nm, and 225 nm thick films were studied; thinner films are dominated by the tetragonal phase, whereas thicker films exhibit both tetragonal and rhombohedral phases. The evolution of these phases as function of film thickness and temperature was experimentally determined.

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

NASA Astrophysics Data System (ADS)

Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

2017-07-01

We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.

2014-04-01

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

2014-12-01

This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

Optical, wetting and electrical properties of functionalized fulleropyrrolidine thin films

NASA Astrophysics Data System (ADS)

Abdulrazack, Parveen; Venkatesan, Sughanya; Chellasamy, Manoharan; Samuthira, Nagarajan

2017-12-01

Fulleropyrrolidine derivatives acts as an electron acceptor in the fabrication of solar cells and other optoelectronic devices. In this investigation thin film of functionalized fulleropyrrolidines were fabricated and studied their photo-physical properties. Surface morphology of the thin films was investigated through AFM and FE-SEM. The results suggested that large dependence on structure vs molecular packing. The long alkyl chain substituted C60 were assembled in the form of nanorods. C60- C60 intermolecular distance were measured, the films were with good absorption and exhibits n-type semiconducting behavior. The films were having high contact angle and can be effectively used for fabricating semiconducting devices with self- cleaning property.

Properties of thin silver films with different thickness

NASA Astrophysics Data System (ADS)

Zhao, Pei; Su, Weitao; Wang, Reng; Xu, Xiaofeng; Zhang, Fengshan

2009-01-01

In order to investigate optical properties of silver films with different film thickness, multilayer composed of thin silver film sandwiched between ZnS films are sputtered on the float glass. The crystal structures, optical and electrical properties of films are characterized by various techniques, such as X-ray diffraction (XRD), spectrum analysis, etc. The optical constants of thin silver film are calculated by fitting the transmittance ( T) and reflectance ( R) spectrum of the multilayer. Electrical and optical properties of silver films thinner than 6.2 nm exhibit sharp change. However, variation becomes slow as film thickness is larger than 6.2 nm. The experimental results indicate that 6.2 nm is the optimum thickness for properties of silver.

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, M. N.; Alshareef, H. N.

2012-01-01

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm-1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 me), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Synthesis and characterization of nanostructured strontium hexaferrite thin films by the sol-gel method

NASA Astrophysics Data System (ADS)

Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.

2012-07-01

Nanostructured single phase strontium hexaferrite, SrFe12O19, thin films have been synthesized on the (100) silicon substrate using a spin coating sol-gel process. The thin films with various Fe/Sr molar ratios of 8-12 were calcined at different temperatures from 500 to 900 °C. The composition, microstructure and magnetic properties of the SrFe12O19 thin films were characterized using Fourier transform infrared spectroscopy, differential thermal analysis, thermogravimetry, X-ray diffraction, electron microscopy and vibrating sample magnetometer. The results showed that the optimum molar ratio for Fe/Sr was 10 at which the lowest calcination temperature to obtain the single phase strontium hexaferrite thin film was 800 °C. The magnetic measurements revealed that the sample with Fe/Sr molar ratio of 10, exhibited higher saturation magnetization (267.5 emu/cm3) and coercivity (4290 Oe) in comparison with those synthesized under other Fe/Sr molar ratios.

Optical characterizations of silver nanoprisms embedded in polymer thin film layers

NASA Astrophysics Data System (ADS)

Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

2017-10-01

The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

Competitiveness as a moderator of the relation between appearance-related factors and disordered eating behaviors.

PubMed

Schleien, Jenna L; Bardone-Cone, Anna M

2016-06-01

The present study examined competitiveness as a moderator of the relationships between appearance-related factors (i.e., thin-ideal internalization, appearance contingent self-worth) and disordered eating behaviors (i.e., dieting, excessive exercise). Participants were 441 undergraduate females for cross-sectional analyses, with 237 also contributing data longitudinally, 1 year later. Results showed that, in a model including thin-ideal internalization and appearance contingent self-worth and their interactions with competitiveness, thin-ideal internalization (but not appearance contingent self-worth) interacted with competitiveness to identify concurrent levels of both dieting and excessive exercise. Individuals high in both thin-ideal internalization and competitiveness exhibited the highest levels of concurrent dieting and excessive exercise. After controlling for baseline levels of the dependent variables, neither appearance-related factor interacted with competitiveness to predict dieting or excessive exercise. These findings suggest that individuals who are both competitive and accept and strive to achieve the thin ideal may be at risk for disordered eating behaviors. Copyright © 2016 Elsevier Ltd. All rights reserved.

Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

2017-10-01

Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g-1 at the 150th cycle at C/2 current density, and 1200 mAh g-1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

Vectorial method used to monitor an evolving system: Titanium oxide thin films under UV illumination

NASA Astrophysics Data System (ADS)

Béchu, Solène; Humbert, Bernard; Fernandez, Vincent; Fairley, Neal; Richard-Plouet, Mireille

2018-07-01

Under in situ UV illumination, some materials present evolution of their opto-electronic properties that can be monitored by spectroscopy. We present here a mathematical method which can be applied to spectroscopic measurements when an evolving set of data is recorded: the vectorial method. The investigations and quantifications are performed by Infrared spectroscopy and XPS on organic-inorganic thin films prepared by sol-gel. The inorganic part of these hybrid thin films contains Ti oxide-network based whereas the organic part is composed of N,N-dimethylformamide and its hydrolysis products. Under UV illumination, those films exhibit intermediate bandgap behavior due to the photoreduction of Ti(IV) in Ti(III). The role of the solvent in the thin film is underlined during the process of photoreduction together with an understanding of the condensation of the Ti oxide-based network, as these evolutions are critical for the opto-electronic properties of those thin films.

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

2013-05-01

WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genfa Wu; Anne-Marie Valente; H. Phillips

2004-05-01

An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV.more » The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.« less

Low-cost ultra-thin broadband terahertz beam-splitter.

PubMed

Ung, Benjamin S-Y; Fumeaux, Christophe; Lin, Hungyen; Fischer, Bernd M; Ng, Brian W-H; Abbott, Derek

2012-02-27

A low-cost terahertz beam-splitter is fabricated using ultra-thin LDPE plastic sheeting coated with a conducting silver layer. The beam splitting ratio is determined as a function of the thickness of the silver layer--thus any required splitting ratio can be printed on demand with a suitable rapid prototyping technology. The low-cost aspect is a consequence of the fact that ultra-thin LDPE sheeting is readily obtainable, known more commonly as domestic plastic wrap or cling wrap. The proposed beam-splitter has numerous advantages over float zone silicon wafers commonly used within the terahertz frequency range. These advantages include low-cost, ease of handling, ultra-thin thickness, and any required beam splitting ratio can be readily fabricated. Furthermore, as the beam-splitter is ultra-thin, it presents low loss and does not suffer from Fabry-Pérot effects. Measurements performed on manufactured prototypes with different splitting ratios demonstrate a good agreement with our theoretical model in both P and S polarizations, exhibiting nearly frequency-independent splitting ratios in the terahertz frequency range.

Internal residual stress studies and enhanced dielectric properties in La0.7Sr0.3CoO3 buffered (Ba,Sr)TiO3 thin films

NASA Astrophysics Data System (ADS)

Lu, Shengbo; Xu, Zhengkui

2009-09-01

Ba0.6Sr0.4TiO3 (BST) thin films were deposited on La0.7Sr0.3CoO3 (LSCO) buffered and unbuffered Pt (111)/Ti/SiO2/Si substrates by pulsed laser deposition. The former exhibits a (100) preferred orientation and the latter a random orientation, respectively. Grazing incident x-ray diffraction study revealed that the tensile residual stress observed in the latter is markedly reduced in the former. As a result, the dielectric property of the LSCO buffered BST thin film is greatly improved, which shows a larger dielectric constant and tunability, smaller loss tangent, and lower leakage current than those of the unbuffered BST thin film. The relaxation of the larger tensile residual stress is attributed to the larger grain size in the buffered BST thin film and to a closer match of thermal expansion coefficient between the BST and the LSCO buffer layer.

Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications.

PubMed

He, Qiyuan; Zeng, Zhiyuan; Yin, Zongyou; Li, Hai; Wu, Shixin; Huang, Xiao; Zhang, Hua

2012-10-08

By combining two kinds of solution-processable two-dimensional materials, a flexible transistor array is fabricated in which MoS(2) thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm-long MoS(2) channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS(2) thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times. The successful incorporation of a MoS(2) thin-film into the electronic sensor promises its potential application in various electronic devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced photo response of mesoporous nanostructured CdS thin film via electrospray aerosol deposition technique

NASA Astrophysics Data System (ADS)

Logu, T.; Soundarrajan, P.; Sankarasubramanian, K.; Sethuraman, K.

2018-04-01

In this work, a high crystalline and mesoporous nanostructured cadmium sulfide (CdS) thin film was successfully grown on the FTO substrates using facile Electrospray Aerosol Deposition (ESAD) technique. The structural, optical, morphological and electrical properties of CdS thin film have been systematically examined. CdS thin film exhibits the hexagonal wurtzite crystal structure with polycrystalline nature. The optical band gap energy of the prepared film was estimated from the Tauc plot and is 2.43 eV. The SEM and AFM images show that the well-interconnected CdS nanoparticles gives mesoporous like morphology. The fine aerosol generated from the ESAD process induces the alteration in the surface morphological structure of deposited CdS film that consequences in enhanced electrical and photo-physical properties. The photoconductivity of the sample has been studied which demonstrates significant photo current. The present study predicts that mesoporous nanostructured CdS thin film would be given a special interest for optoelectronic applications.

Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

PubMed Central

Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

2015-01-01

Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm2 V−1 s−1, on/off ratio of 103–104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays. PMID:26173436

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

Comparison of Cf-252 thin-film sources prepared by evaporation or self-transfer

DOE PAGES

Algutifan, Noor J.; Sherman, Steven R.; Alexander, Charles W.

2014-11-29

Californium-252 (Z = 98) is valued as a potent neutron source due to its spontaneous fission decay path. Thin film sources containing Cf-252 were prepared by two techniques: evaporation and self-transfer. The sources were analyzed by alpha and gamma spectroscopy. Results indicate that self-transfer sources exhibit less alpha energy straggling and energy loss than evaporative sources. Fission fragments may also self-transfer, and sources made by self-transfer may need some decay time to reach radioactive equilibrium.

Physical properties of nanostructured CeO2 thin films grown by SILAR method

NASA Astrophysics Data System (ADS)

Khan, Ishaque Ahmed; Belkhedkar, M. R.; Salodkar, R. V.; Ubale, A. U.

2018-05-01

Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crowder, M.A.; Sposili, R.S.; Cho, H.S.

Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFT`s) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFT`s exhibit properties and a level of performance that are superior to polycrystalline Si-based TFT`s and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. The authors attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFT`s.

The Effects of Bolus Volume and Texture on Pharyngeal Pressure Events Using High-resolution Manometry and Its Comparison with Videofluoroscopic Swallowing Study

PubMed Central

Ryu, Ju Seok; Park, Donghwi; Oh, Yoongul; Lee, Seok Tae; Kang, Jin Young

2016-01-01

Background/Aims The purpose of this study was to develop new parameters of high-resolution manometry (HRM) and to applicate these to quantify the effect of bolus volume and texture on pharyngeal swallowing. Methods Ten healthy subjects prospectively swallowed dry, thin fluid 2 mL, thin fluid 5 mL, thin fluid 10 mL, and drinking twice to compare effects of bolus volume. To compare effect of texture, subjects swallowed thin fluid 5 mL, yogurt 5 mL, and bread twice. A 32-sensor HRM catheter and BioVIEW ANALYSIS software were used for data collection and analysis. HRM data were synchronized with kinematic analysis of videofluoroscopic swallowing study (VFSS) using epiglottis tilting. Results Linear correlation analysis for volume showed significant correlation for area of velopharynx, duration of velopharynx, pre-upper esophageal sphincter (UES) maximal pressure, minimal UES pressure, UES activity time, and nadir UES duration. In the correlation with texture, all parameters were not significantly different. The contraction of the velopharynx was faster than laryngeal elevation. The durations of UES relaxation was shorter in the kinematic analysis than HRM. Conclusions The bolus volume was shown to have significant effect on pharyngeal pressure and timing, but the texture did not show any effect on pharyngeal swallowing. The parameters of HRM were more sensitive than those of kinematic analysis. As the parameters of HRM are based on precise anatomic structure and the kinematic analysis reflects the actions of multiple anatomic structures, HRM and VFSS should be used according to their purposes. PMID:26598598

Low Cost Fiber Optic Cable Assemblies for Local Distribution Systems

DTIC Science & Technology

1977-04-01

coefficient of friction, and is chemically inert. PFA exhibits low water permeability and ab- sorption . FEP-100 and FEP-110 were initially extruded over T08...with FEP 110. To overcome these problems, Teflon PFA 9704 was evaluated. It exhibited good extrudability which allowed application of thin and thick...superior extrudability, in addition to meeting the optical characteristics required for a cladding material, Teflon PFA was considered a viable

Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications.

PubMed

Cushen, Julia D; Otsuka, Issei; Bates, Christopher M; Halila, Sami; Fort, Sébastien; Rochas, Cyrille; Easley, Jeffrey A; Rausch, Erica L; Thio, Anthony; Borsali, Redouane; Willson, C Grant; Ellison, Christopher J

2012-04-24

Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (χ), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.

Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

NASA Astrophysics Data System (ADS)

Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

2013-04-01

Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

Immobilization of Ochrobactrum tritici As5 on PTFE thin films for arsenite biofiltration.

PubMed

Branco, Rita; Sousa, Tânia; Piedade, Ana P; Morais, Paula V

2016-03-01

Ochrobactrum tritici SCII24T bacteria is an environmental strain with high capacity to resist to arsenic (As) toxicity, which makes it able to grow in the presence of As(III). The inactivation of the two functional arsenite efflux pumps, ArsB and ACR3_1, resulted in the mutant O. tritici As5 exhibiting a high accumulation of arsenite. This work describes a method for the immobilization of the mutant cells O. tritici As5, on a commercial polymeric net after sputtered modified by the deposition of poly(tetrafluoroethylene) (PTFE) thin films, and demonstrates the capacity of immobilized cells to accumulate arsenic from solutions. Six different set of deposition parameters for PTFE thin films were developed and tested in vitro regarding their ability to immobilize the bacterial cells. The surface that exhibited a mild zeta potential value, hydrophobic characteristics, the lowest surface free energy but with a high polar component and the appropriate ratio of chemical reactive groups allowed cells to proliferate and to grow as a biofilm. These immobilized cells maintained their ability to accumulate the surrounding arsenite, making it a great arsenic biofilter to be used in bioremediation processes. Copyright © 2015 Elsevier Ltd. All rights reserved.

Effect of Trisodium Citrate Concentration on the Structural and Photodiode Performance of CdO Thin Films

NASA Astrophysics Data System (ADS)

Ravikumar, M.; Valanarasu, S.; Chandramohan, R.; Jacob, S. Santhosh Kumar; Kathalingam, A.

2015-08-01

CdO thin films were deposited on glass and silicon substrates by simple perfume atomizer at 350°C using cadmium acetate and trisodium citrate (TSC). The effect of the TSC concentration on the structural, morphological, optical, and photoconductive properties of the prepared CdO thin films was investigated. X-Ray diffraction (XRD) studies of the deposited films revealed improvement in crystalline nature with increase of TSC concentration. Films prepared without TSC showed porous nature, not fully covering the substrate, whereas films prepared using TSC exhibited full coverage of the substrate with uniform particles. Optical transmittance study of the films showed high transmittance (50% to 60%), and the absorption edge was found to shift towards the red region depending on the TSC concentration. The films exhibited a direct band-to-band transition with bandgap varying between 2.31 eV and 2.12 eV. Photoconductivity studies of the n-CdO/ p-Si structure for various TSC concentrations were also carried out. I- V characteristics of this n-CdO/ p-Si structure revealed the formation of rectifying junctions, and its photoconductivity was found to increase with the TSC concentration.

Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

NASA Astrophysics Data System (ADS)

Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

2017-10-01

Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

Increased phosphatidylethanolamine N-methyltransferase gene expression in non-small-cell lung cancer tissue predicts shorter patient survival

PubMed Central

ZINRAJH, DAVID; HÖRL, GERD; JÜRGENS, GÜNTHER; MARC, JANJA; SOK, MIHA; CERNE, DARKO

2014-01-01

Lipid mobilization is of great importance for tumor growth and studies have suggested that cancer cells exhibit abnormal choline phospholipid metabolism. In the present study, we hypothesized that phosphatidylethanolamine N-methyltransferase (PEMT) gene expression is increased in non-small-cell lung cancer (NSCLC) tissues and that increased gene expression acts as a predictor of shorter patient survival. Forty-two consecutive patients with resected NSCLC were enrolled in this study. Paired samples of lung cancer tissues and adjacent non-cancer lung tissues were collected from resected specimens for the estimation of PEMT expression. SYBR Green-based real-time polymerase chain reaction was used for quantification of PEMT mRNA in lung cancer tissues. Lipoprotein lipase (LPL) and fatty acid synthase (FASN) activities had already been measured in the same tissues. During a four-year follow-up, 21 patients succumbed to tumor progression. One patient did not survive due to non-cancer reasons and was not included in the analysis. Cox regression analysis was used to assess the prognostic value of PEMT expression. Our findings show that elevated PEMT expression in the cancer tissue, relative to that in the adjacent non-cancer lung tissue, predicts shorter patient survival independently of standard prognostic factors and also independently of increased LPL or FASN activity, the two other lipid-related predictors of shorter patient survival. These findings suggest that active phosphatidylcholine and/or choline metabolism are essential for tumor growth and progression. PMID:24932311

Increased phosphatidylethanolamine N-methyltransferase gene expression in non-small-cell lung cancer tissue predicts shorter patient survival.

PubMed

Zinrajh, David; Hörl, Gerd; Jürgens, Günther; Marc, Janja; Sok, Miha; Cerne, Darko

2014-06-01

Lipid mobilization is of great importance for tumor growth and studies have suggested that cancer cells exhibit abnormal choline phospholipid metabolism. In the present study, we hypothesized that phosphatidylethanolamine N-methyltransferase (PEMT) gene expression is increased in non-small-cell lung cancer (NSCLC) tissues and that increased gene expression acts as a predictor of shorter patient survival. Forty-two consecutive patients with resected NSCLC were enrolled in this study. Paired samples of lung cancer tissues and adjacent non-cancer lung tissues were collected from resected specimens for the estimation of PEMT expression. SYBR Green-based real-time polymerase chain reaction was used for quantification of PEMT mRNA in lung cancer tissues. Lipoprotein lipase (LPL) and fatty acid synthase (FASN) activities had already been measured in the same tissues. During a four-year follow-up, 21 patients succumbed to tumor progression. One patient did not survive due to non-cancer reasons and was not included in the analysis. Cox regression analysis was used to assess the prognostic value of PEMT expression. Our findings show that elevated PEMT expression in the cancer tissue, relative to that in the adjacent non-cancer lung tissue, predicts shorter patient survival independently of standard prognostic factors and also independently of increased LPL or FASN activity, the two other lipid-related predictors of shorter patient survival. These findings suggest that active phosphatidylcholine and/or choline metabolism are essential for tumor growth and progression.

Enhanced Fine-Form Perception Does Not Contribute to Gestalt Face Perception in Autism Spectrum Disorder

PubMed Central

Maekawa, Toshihiko; Miyanaga, Yuka; Takahashi, Kenji; Takamiya, Naomi; Ogata, Katsuya; Tobimatsu, Shozo

2017-01-01

Individuals with autism spectrum disorder (ASD) show superior performance in processing fine detail, but often exhibit impaired gestalt face perception. The ventral visual stream from the primary visual cortex (V1) to the fusiform gyrus (V4) plays an important role in form (including faces) and color perception. The aim of this study was to investigate how the ventral stream is functionally altered in ASD. Visual evoked potentials were recorded in high-functioning ASD adults (n = 14) and typically developing (TD) adults (n = 14). We used three types of visual stimuli as follows: isoluminant chromatic (red/green, RG) gratings, high-contrast achromatic (black/white, BW) gratings with high spatial frequency (HSF, 5.3 cycles/degree), and face (neutral, happy, and angry faces) stimuli. Compared with TD controls, ASD adults exhibited longer N1 latency for RG, shorter N1 latency for BW, and shorter P1 latency, but prolonged N170 latency, for face stimuli. Moreover, a greater difference in latency between P1 and N170, or between N1 for BW and N170 (i.e., the prolongation of cortico-cortical conduction time between V1 and V4) was observed in ASD adults. These findings indicate that ASD adults have enhanced fine-form (local HSF) processing, but impaired color processing at V1. In addition, they exhibit impaired gestalt face processing due to deficits in integration of multiple local HSF facial information at V4. Thus, altered ventral stream function may contribute to abnormal social processing in ASD. PMID:28146575

Controllable Ag nanostructure patterning in a microfluidic channel for real-time SERS systems.

PubMed

Leem, Juyoung; Kang, Hyun Wook; Ko, Seung Hwan; Sung, Hyung Jin

2014-03-07

We present a microfluidic patterning system for fabricating nanostructured Ag thin films via a polyol method. The fabricated Ag thin films can be used immediately in a real-time SERS sensing system. The Ag thin films are formed on the inner surfaces of a microfluidic channel so that a Ag-patterned Si wafer and a Ag-patterned PDMS channel are produced by the fabrication. The optimum sensing region and fabrication duration for effective SERS detection were determined. As SERS active substrates, the patterned Ag thin films exhibit an enhancement factor (EF) of 4.25 × 10(10). The Ag-patterned polymer channel was attached to a glass substrate and used as a microfluidic sensing system for the real-time monitoring of biomolecule concentrations. This microfluidic patterning system provides a low-cost process for the fabrication of materials that are useful in medical and pharmaceutical detection and can be employed in mass production.

Spectroscopic Study of Deep Level Emissions from Acceptor Defects in ZnO Thin Films with Oxygen Rich Stoichiometry

NASA Astrophysics Data System (ADS)

Ilyas, Usman; Rawat, R. S.; Tan, T. L.

2013-10-01

This paper reports the tailoring of acceptor defects in oxygen rich ZnO thin films at different post-deposition annealing temperatures (500-800°C) and Mn doping concentrations. The XRD spectra exhibited the nanocrystalline nature of ZnO thin films along with inconsistent variation in lattice parameters suggesting the temperature-dependent activation of structural defects. Photoluminescence emission spectra revealed the temperature dependent variation in deep level emissions (DLE) with the presence of acceptors as dominating defects. The concentration of native defects was estimated to be increased with temperature while a reverse trend was observed for those with increasing doping concentration. A consistent decrease in DLE spectra, with increasing Mn content, revealed the quenching of structural defects in the optical band gap of ZnO favorable for good quality thin films with enhanced optical transparency.

Evaluation of the optical characteristics of c-axis oriented zinc oxide thin films grown by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Baisakh, K.; Behera, S.; Pati, S.

2018-03-01

In this work we have systematically studied the optical characteristics of synthesized wurzite zinc oxide thin films exhibiting (002) orientation. Using sol gel spin coating technique zinc oxide thin films are grown on pre cleaned fused quartz substrates. Structural properties of the films are studied using X-ray diffraction analysis. Micro structural analysis and thickness of the grown samples are analyzed using field emission scanning electron microscopy. With an aim to investigate the optical characteristics of the grown zinc oxide thin films the transmission and reflection spectra are evaluated in the ultraviolet-visible (UV-VIS) range. Using envelope method, the refractive index, extinction coefficient, absorption coefficient, band gap energy and the thickness of the synthesized films are estimated from the recorded UV-VIS spectra. An attempt has also been made to study the influence of crystallographic orientation on the optical characteristics of the grown films.

Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

PubMed

Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

2012-01-01

In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition.

PubMed

Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee

2011-08-01

Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.

Rapid fabrication of hierarchically structured supramolecular nanocomposite thin films in one minute

DOEpatents

Xu, Ting; Kao, Joseph

2016-11-08

Functional nanocomposites containing nanoparticles of different chemical compositions may exhibit new properties to meet demands for advanced technology. It is imperative to simultaneously achieve hierarchical structural control and to develop rapid, scalable fabrication to minimize degradation of nanoparticle properties and for compatibility with nanomanufacturing. The assembly kinetics of supramolecular nanocomposite in thin films is governed by the energetic cost arising from defects, the chain mobility, and the activation energy for inter-domain diffusion. By optimizing only one parameter, the solvent fraction in the film, the assembly kinetics can be precisely tailored to produce hierarchically structured thin films of supramolecular nanocomposites in approximately one minute. Moreover, the strong wavelength dependent optical anisotropy in the nanocomposite highlights their potential applications for light manipulation and information transmission. The present invention opens a new avenue in designing manufacture-friendly continuous processing for the fabrication of functional nanocomposite thin films.

Post-growth process for flexible CdS/CdTe thin film solar cells with high specific power.

PubMed

Cho, Eunwoo; Kang, Yoonmook; Kim, Donghwan; Kim, Jihyun

2016-05-16

We demonstrated a flexible CdS/CdTe thin film solar cell with high specific power of approximately 254 W/kg. A flexible and ultra-light weight CdS/CdTe cell treated with pre-NP etch process exhibited high conversion efficiency of 13.56% in superstrate configuration. Morphological, structural and optical changes of CdS/CdTe thin films were characterized when pre-NP etch step was incorporated to the conventional post-deposition process. Improvement of photovoltaic parameters can be attributed to the removal of the oxide and the formation of Te-rich layer, which benefit the activation process. Pre-NP etched cell maintained their flexibility and performance under the repeated tensile strain of 0.13%. Our method can pave a way for manufacturing flexible CdS/CdTe thin film solar cells with high specific power for mobile and aerospace applications.

Multi-functional properties of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

2012-09-01

In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

New possibility on InZnO nano thin film for green emissive optoelectronic devices

NASA Astrophysics Data System (ADS)

Sugumaran, Sathish; Noor Bin Ahmad, Mohd; Faizal Jamlos, Mohd; Bellan, Chandar Shekar; Chandran, Sharmila; Sivaraj, Manoj

2016-04-01

Indium zinc oxide (InZnO) nano thin film was prepared from InZnO nanoparticles (NPs) by thermal evaporation technique. Fourier transform infrared spectroscopy showed the presence of metal-oxide bond. X-ray diffraction pattern revealed the mixed phase structure. The presence of elements In, Zn and O were identified from energy dispersive X-ray analysis. Size of the NPs was found to be 171 and 263 nm by transmission electron microscopy. Scanning electron microscopy image showed the spherical shape uniform morphology with uniform distribution grains. Photoluminescence spectrum exhibited a broad green emission for InZnO nano thin film. The acquired results of structure, smooth morphology and photoluminescence property suggested that the InZnO nano thin film to be a promising material for room temperature green emissive optoelectronic, laser diodes, solar cells and other optical devices.

Structural and optical properties of PbS thin films grown by chemical bath deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seghaier, S.; Kamoun, N.; Guasch, C.

2007-09-19

Lead sulphide thin films are grown on glass substrates at various deposition times tD, in the range of 40-60 min per step of 2 min, using the chemical bath deposition technique. X-ray diffraction and atomic force microscopy are used to characterize the film structure. The surface composition is analysed by Auger electron spectroscopy. It appears that the as-prepared thin films are polycrystalline with cubic structure. Nanometric scale crystallites are uniformly distributed on the surface. They exhibit almost a stoechiometric composition with a [Pb]/[S] ratio equal to 1.10. Optical properties are studied in the range of 300-3300 nm by spectrophotometric measurements.more » Analysis of the optical absorption data of lead sulphide thin layers reveals a narrow optical direct band gap equal to 0.46 eV for the layer corresponding to a deposition time equal to 60 min.« less

Measurement of thin films using very long acoustic wavelengths

NASA Astrophysics Data System (ADS)

Clement, G. T.; Nomura, H.; Adachi, H.; Kamakura, T.

2013-12-01

A procedure for measuring material thickness by means of necessarily long acoustic wavelengths is examined. The approach utilizes a temporal phase lag caused by the impulse time of wave momentum transferred through a thin layer that is much denser than its surrounding medium. In air, it is predicted that solid or liquid layers below approximately 1/2000 of the acoustic wavelength will exhibit a phase shift with an arctangent functional dependence on thickness and layer density. The effect is verified for thin films on the scale of 10 μm using audible frequency sound (7 kHz). Soap films as thin as 100 nm are then measured using 40 kHz air ultrasound. The method's potential for imaging applications is demonstrated by combining the approach with near-field holography, resulting in reconstructions with sub-wavelength resolution in both the depth and lateral directions. Potential implications at very high and very low acoustic frequencies are discussed.

Carrier Injection and Scattering in Atomically Thin Chalcogenides

NASA Astrophysics Data System (ADS)

Li, Song-Lin; Tsukagoshi, Kazuhito

2015-12-01

Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin materials, and the device performance normally degrades while exhibiting a low carrier mobility as compared with corresponding bulks, constituting a main hurdle for application in electronics. In this brief review, we summarize our recent work on electrode/channel contacts and carrier scattering mechanisms to address the origins of this adverse thickness dependence. Extrinsically, the Schottky barrier height increases at the electrode/channel contact area in thin channels owing to bandgap expansion caused by quantum confinement, which hinders carrier injection and degrades device performance. Intrinsically, thin channels tend to suffer from intensified Coulomb impurity scattering, resulting from the reduced interaction distance between interfacial impurities and channel carriers. Both factors are responsible for the adverse dependence of carrier mobility on channel thickness in two-dimensional semiconductors.

Water-Based Peeling of Thin Hydrophobic Films

NASA Astrophysics Data System (ADS)

Khodaparast, Sepideh; Boulogne, François; Poulard, Christophe; Stone, Howard A.

2017-10-01

Inks of permanent markers and waterproof cosmetics create elastic thin films upon application on a surface. Such adhesive materials are deliberately designed to exhibit water-repellent behavior. Therefore, patterns made up of these inks become resistant to moisture and cannot be cleaned by water after drying. However, we show that sufficiently slow dipping of such elastic films, which are adhered to a substrate, into a bath of pure water allows for complete removal of the hydrophobic coatings. Upon dipping, the air-water interface in the bath forms a contact line on the substrate, which exerts a capillary-induced peeling force at the edge of the hydrophobic thin film. We highlight that this capillary peeling process is more effective at lower velocities of the air-liquid interface and lower viscosities. Capillary peeling not only removes such thin films from the substrate but also transfers them flawlessly onto the air-water interface.

The differences in crown formation during the splash on the thin water layers formed on the saturated soil surface and model surface

PubMed Central

Mazur, Rafał; Polakowski, Cezary; Bieganowski, Andrzej

2017-01-01

Splash is the first stage of a negative phenomenon–soil erosion. The aim of this work was to describe the crown formation quantitatively (as part of the splash erosion) and compare the course of this phenomenon on the thin water film formed on a smooth glass surface and on the surface of saturated soil. The height of the falling water drop was 1.5 m. The observation of the crowns was carried out by high-speed cameras. The static and dynamic parameters of crown formation were analysed. It was found that the crowns formed on the water film covering the saturated soil surface were smaller and the time intervals of their existence were shorter. In addition, the shapes of the crowns were different from those created on the water layer covering the glass surface. These differences can be explained by the slightly different values of surface tension and viscosity of the soil solution, the greater roughness of the soil surface and the lower thickness of the water film on the soil surface. PMID:28750072

Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca

2014-12-29

This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparentmore » passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.« less

Innovative laser based solar cell scribing

NASA Astrophysics Data System (ADS)

Frei, Bruno; Schneeberger, Stefan; Witte, Reiner

2011-03-01

The solar photovoltaic market is continuously growing utilizing boths crystalline silicon (c-Si) as well as thin film technologies. This growth is directly dependant on the manufacturing costs for solar cells. Factors for cost reduction are innovative ideas for an optimization of precision and throughput. Lasers are excellent tools to provide highly efficient processes with impressive accuracy. They need to be used in combination with fast and precise motion systems for a maximum gain in the manufacturing process, yielding best cost of ownership. In this article such an innovative solution is presented for laser scribing in thin film Si modules. A combination of a new glass substrate holding system combined with a fast and precise motion system is the foundation for a cost effective scribing machine. In addition, the advantages of fiber lasers in beam delivery and beam quality guarantee not only shorter setup and down times but also high resolution and reproducibility for the scribing processes P1, P2 and P3. The precision of the whole system allows to reduce the dead zone to a minimum and therefore to improve the efficiency of the modules.

Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham

2016-01-15

Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates thatmore » the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.« less

Graphene-Based Ultra-Light Batteries for Aircraft

NASA Technical Reports Server (NTRS)

Calle, Carlos I.; Kaner, Richard B.

2014-01-01

Develop a graphene-based ultracapacitor prototype that is flexible, thin, lightweight, durable, low cost, and safe and that will demonstrate the feasibility for use in aircraft center dot These graphene-based devices store charge on graphene sheets and take advantage of the large accessible surface area of graphene (2,600 m2/g) to increase the electrical energy that can be stored. center dot The proposed devices should have the electrical storage capacity of thin-film-ion batteries but with much shorter charge/discharge cycle times as well as longer lives center dot The proposed devices will be carbon-based and so will not have the same issues with flammability or toxicity as the standard lithium-based storage cells There are two main established methods for the storage and delivery of electrical energy: center dot Batteries - Store energy with electrochemical reactions - High energy densities - Slow charge/discharge cycles - Used in applications requiring large amounts of energy ? aircraft center dot Electrochemical capacitors - Store energy in electrochemical double layers - Fast charge/discharge cycles - Low energy densities - Used in electronics devices - Large capacitors are used in truck engine cranking

Spin-scattering rates in metallic thin films measured by ferromagnetic resonance damping enhanced by spin-pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boone, C. T.; Shaw, J. M.; Nembach, H. T.

2015-06-14

We determined the spin-transport properties of Pd and Pt thin films by measuring the increase in ferromagnetic resonance damping due to spin-pumping in ferromagnetic (FM)-nonferromagnetic metal (NM) multilayers with varying NM thicknesses. The increase in damping with NM thickness depends strongly on both the spin- and charge-transport properties of the NM, as modeled by diffusion equations that include both momentum- and spin-scattering parameters. We use the analytical solution to the spin-diffusion equations to obtain spin-diffusion lengths for Pt and Pd. By measuring the dependence of conductivity on NM thickness, we correlate the charge- and spin-transport parameters, and validate the applicabilitymore » of various models for momentum-scattering and spin-scattering rates in these systems: constant, inverse-proportional (Dyakanov-Perel), and linear-proportional (Elliot-Yafet). We confirm previous reports that the spin-scattering time appears to be shorter than the momentum scattering time in Pt, and the Dyakanov-Perel-like model is the best fit to the data.« less

The differences in crown formation during the splash on the thin water layers formed on the saturated soil surface and model surface.

PubMed

Beczek, Michał; Ryżak, Magdalena; Sochan, Agata; Mazur, Rafał; Polakowski, Cezary; Bieganowski, Andrzej

2017-01-01

Splash is the first stage of a negative phenomenon-soil erosion. The aim of this work was to describe the crown formation quantitatively (as part of the splash erosion) and compare the course of this phenomenon on the thin water film formed on a smooth glass surface and on the surface of saturated soil. The height of the falling water drop was 1.5 m. The observation of the crowns was carried out by high-speed cameras. The static and dynamic parameters of crown formation were analysed. It was found that the crowns formed on the water film covering the saturated soil surface were smaller and the time intervals of their existence were shorter. In addition, the shapes of the crowns were different from those created on the water layer covering the glass surface. These differences can be explained by the slightly different values of surface tension and viscosity of the soil solution, the greater roughness of the soil surface and the lower thickness of the water film on the soil surface.

Nonlinear evolution of three-dimensional instabilities of thin and thick electron scale current sheets: Plasmoid formation and current filamentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Neeraj; Büchner, Jörg; Max Planck Institute for Solar System Research, Justus-Von-Liebig-Weg-3, Göttingen

Nonlinear evolution of three dimensional electron shear flow instabilities of an electron current sheet (ECS) is studied using electron-magnetohydrodynamic simulations. The dependence of the evolution on current sheet thickness is examined. For thin current sheets (half thickness =d{sub e}=c/ω{sub pe}), tearing mode instability dominates. In its nonlinear evolution, it leads to the formation of oblique current channels. Magnetic field lines form 3-D magnetic spirals. Even in the absence of initial guide field, the out-of-reconnection-plane magnetic field generated by the tearing instability itself may play the role of guide field in the growth of secondary finite-guide-field instabilities. For thicker current sheetsmore » (half thickness ∼5 d{sub e}), both tearing and non-tearing modes grow. Due to the non-tearing mode, current sheet becomes corrugated in the beginning of the evolution. In this case, tearing mode lets the magnetic field reconnect in the corrugated ECS. Later thick ECS develops filamentary structures and turbulence in which reconnection occurs. This evolution of thick ECS provides an example of reconnection in self-generated turbulence. The power spectra for both the thin and thick current sheets are anisotropic with respect to the electron flow direction. The cascade towards shorter scales occurs preferentially in the direction perpendicular to the electron flow.« less

A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement

PubMed Central

Zhang, Guodong; Zhao, Yulong; Zhao, Yun; Wang, Xinchen; Ren, Wei; Li, Hui; Zhao, You

2018-01-01

With the development of energetic materials (EMs) and microelectromechanical systems (MEMS) initiating explosive devices, the measurement of detonation pressure generated by EMs in the microscale has become a pressing need. This paper develops a manganin thin film ultra-high pressure sensor based on MEMS technology for measuring the output pressure from micro-detonator. A reliable coefficient is proposed for designing the sensor’s sensitive element better. The sensor employs sandwich structure: the substrate uses a 0.5 mm thick alumina ceramic, the manganin sensitive element with a size of 0.2 mm × 0.1 mm × 2 μm and copper electrodes of 2 μm thick are sputtered sequentially on the substrate, and a 25 μm thick insulating layer of polyimide is wrapped on the sensitive element. The static test shows that the piezoresistive coefficient of manganin thin film is 0.0125 GPa−1. The dynamic experiment indicates that the detonation pressure of micro-detonator is 12.66 GPa, and the response time of the sensor is 37 ns. In a word, the sensor developed in this study is suitable for measuring ultra-high pressure in microscale and has a shorter response time than that of foil-like manganin gauges. Simultaneously, this study could be beneficial to research on ultra-high-pressure sensors with smaller size. PMID:29494519

Composite CuFe1 - xSnxO2/p-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Al-Sehemi, Abdullah G.; Mensah-Darkwa, K.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-06-01

CuFe1 - xSnxO2 composite thin film/p-type silicon diodes were prepared on substrate by sol-gel method (x = 0.00, 0.01, 0.03, 0.05, 0.07). The structure of CuFe1 - xSnxO2 composite thin films was studied using XRD analysis and films exhibited amorphous behavior. The elemental compositions and surface morphology of the films were characterized using SEM and EDX. EDX results confirmed the presence of the compositional elements. The optical band gap of CuFe1 - xSnxO2 composite thin films was determined using the optic spectra. The optical band gaps of the CuFe1 - xSnxO2 composite thin films were calculated using optical data and were found to be 3.75, 3.78, 3.80, 3.85 and 3.83 eV for x = 0.00, 0.01, 0.03, 0.05 and 0.07, respectively. The photoresponse and electrical properties of the Al/CuFe1 - xSnxO2/p-Si/Al diode were studied. The barrier height and ideality factor were determined to be averagely 0.67 eV and 2.6, respectively. The electrical and photoresponse characteristics of the diodes have been investigated under dark and solar light illuminations, respectively. The interface states were used to explain the results obtained in present study. CuFe1 - xSnxO2 photodiodes exhibited a high photoresponsivity to be used in optoelectronic applications.

Facile synthesis of hierarchical mesoporous weirds-like morphological MnO2 thin films on carbon cloth for high performance supercapacitor application.

PubMed

Shinde, Pragati A; Lokhande, Vaibhav C; Ji, Taeksoo; Lokhande, Chandrakant D

2017-07-15

The mesoporous nanostructured metal oxides have a lot of capabilities to upsurge the energy storing capacity of the supercapacitor. In present work, different nanostructured morphologies of MnO 2 have been successfully fabricated on flexible carbon cloth by simple but capable hydrothermal method at different deposition temperatures. The deposition temperature has strong influence on reaction kinetics, which subsequently alters the morphology and electrochemical performance. Among different nanostructured MnO 2 thin films, the mesoporous weirds composed thin film obtained at temperature of 453K exhibits excellent physical and electrochemical features for supercapacitor application. The weirds composed MnO 2 thin film exhibits specific surface area of 109m 2 g -1 , high specific capacitance of 595Fg -1 with areal capacitance of 4.16Fcm -2 at a scan rate of 5mVs -1 and high specific energy of 56.32Whkg -1 . In addition to this, MnO 2 weirds attain capacity retention of 87 % over 2000 CV cycles, representing better cycling stability. The enhanced electrochemical performance could be ascribed to direct growth of highly porous MnO 2 weirds on carbon cloth which provide more pathways for easy diffusion of electrolyte into the interior of electroactive material. The as-fabricated electrode with improved performance could be ascribed as a potential electrode material for energy storage devices. Copyright © 2017 Elsevier Inc. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-Omore » bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.« less

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

PubMed

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-08-11

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm²/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased.

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

PubMed Central

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-01-01

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm2/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased. PMID:28788159

Chemical nature of colossal dielectric constant of CaCu3Ti4O12 thin film by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Deng, Guochu; Xanthopoulos, Nicolas; Muralt, Paul

2008-04-01

Epitaxial CaCu3Ti4O12 thin films grown by pulsed laser deposition were studied in the as-deposited and oxygen annealed state. The first one exhibited the usual transition from dielectric to colossal dielectric behavior upon increasing the temperature to above 100K. This transition disappeared after annealing at 900°C in air. The two states significantly differ in their x-ray photoelectron spectra. The state of colossal dielectric constant corresponds to a bulk material with considerable amounts of Cu + and Ti3+, combined with Cu species enrichment at the surface. The annealed state exhibited a nearly stoichiometric composition with no Cu+ and Ti3+. The previously observed p-type conduction in the as-deposited state is thus related to oxygen vacancies compensated by the point defects of Cu+ and Ti3+.

High pressure mechanical seal

NASA Technical Reports Server (NTRS)

Babel, Henry W. (Inventor); Fuson, Phillip L. (Inventor); Chickles, Colin D. (Inventor); Jones, Cherie A. (Inventor); Anderson, Raymond H. (Inventor)

1995-01-01

A relatively impervious mechanical seal is formed between the outer surface of a tube and the inside surface of a mechanical fitting of a high pressure fluid or hydraulic system by applying a very thin soft metal layer onto the outer surface of the hard metal tube and/or inner surface of the hard metal fitting, prior to swaging the fitting onto the tube. The thickness of such thin metal layer is independent of the size of the tube and/or fittings. Many metals and alloys of those metals exhibit the requisite softness, including silver, gold, nickel, tin, platinum, indium, rhodium and cadmium. Suitably, the coating is about 0.0025 millimeters (0.10 mils) in thickness. After swaging, the tube and fitting combination exhibits very low leak rates on the order or 10.sup.-8 cubic centimeters per second or less as meaured using the Helium leak test.

Resonant tunnelling in a quantum oxide superlattice

DOE PAGES

Choi, Woo Seok; Lee, Sang A.; You, Jeong Ho; ...

2015-06-24

Resonant tunneling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunneling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunneling behaviour with a clear negative differential resistance. The tunneling occurred through an atomically thin, lanthanum δ- doped SrTiO 3 layer, and the negative differential resistance was realized on top of the bi-polar resistance switchingmore » typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10 5) between the high and low resistance states. Lastly, the unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.« less

Stretchable spiral thin-film battery capable of out-of-plane deformation

NASA Astrophysics Data System (ADS)

Kammoun, Mejdi; Berg, Sean; Ardebili, Haleh

2016-11-01

There is a compelling need for innovative design concepts in energy storage devices such as flexible and stretchable batteries that can simultaneously provide electrochemical and mechanical functions to accommodate nonconventional applications including wearable and implantable devices. In this study, we report on the design and fabrication of a stretchable spiral thin-film lithium ion battery that is capable of large out-of-plane deformation of 1300% while exhibiting simultaneous electrochemical functionality. The spiral battery is fabricated using a flexible solid polymer nanocomposite electrolyte film that offers enhanced safety and stability compared to the conventional organic liquid-based electrolyte. The spiral lithium ion battery exhibits robust mechanical stretchability over 9000 stretching cycles and an energy density of 4.862 mWh/cm3 at ∼650% out-of-plane deformation. Finite element analysis of the spiral battery offers insights about the nature of stresses and strains during battery stretching.

Study of blood flow in several benchmark micro-channels using a two-fluid approach.

PubMed

Wu, Wei-Tao; Yang, Fang; Antaki, James F; Aubry, Nadine; Massoudi, Mehrdad

2015-10-01

It is known that in a vessel whose characteristic dimension (e.g., its diameter) is in the range of 20 to 500 microns, blood behaves as a non-Newtonian fluid, exhibiting complex phenomena, such as shear-thinning, stress relaxation, and also multi-component behaviors, such as the Fahraeus effect, plasma-skimming, etc. For describing these non-Newtonian and multi-component characteristics of blood, using the framework of mixture theory, a two-fluid model is applied, where the plasma is treated as a Newtonian fluid and the red blood cells (RBCs) are treated as shear-thinning fluid. A computational fluid dynamic (CFD) simulation incorporating the constitutive model was implemented using OpenFOAM® in which benchmark problems including a sudden expansion and various driven slots and crevices were studied numerically. The numerical results exhibited good agreement with the experimental observations with respect to both the velocity field and the volume fraction distribution of RBCs.

Photo current generation in RGO - CdS nanorod thin film device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Koushik; Chakrabarty, Sankalpita; Ibrahim, Sk.

2016-05-23

Herein, we report the synthesis and characterization of reduced graphene oxide (RGO) - cadmium sulfide (CdS) nanocomposite materials. The reduction of GO, formation of CdS and decoration of CdS onto RGO sheets were done in a one- pot solvothermal process. We have observed that the PL intensity for CdS nanorods remarkably quenched after the attachment of RGO, which established the photo induced charge transformation from the CdS nanorod to RGO sheets through the RGO-CdS interface. The optoelectronic transport properties of our fabricated large area thin film device exhibits excellent photo induced charge generation under simulated solar light illumination. The photomore » sensitivity of the device increases linearly with the increase of illuminated light intensity. The RGO-CdS composite exhibits enhance photocatalytic dye degradation efficiency in compare to control CdS under simulated solar light illumination.« less

Scale Dependence of the Mechanical Properties and Microstructure of Crustaceans Thin Films as Biomimetic Materials

NASA Astrophysics Data System (ADS)

Verma, Devendra; Qu, Tao; Tomar, Vikas

2015-04-01

The exoskeletons of crustacean species in the form of thin films have been investigated by several researchers to better understand the role played by the exoskeletal structure in affecting the functioning of species such as shrimps, crabs, and lobsters. These species exhibit similar designs in their exoskeleton microstructure, such as a Bouligand pattern (twisted plywood structure), layers of different thickness across cross section, change in mineral content through the layers, etc. Different parts of crustaceans exhibit a significant variation in mechanical properties based on the variation in the above-mentioned parameters. This change in mechanical properties has been analyzed by using imaging techniques such as scanning electron microscopy and energy-dispersive x-ray spectroscopy, and by using mechanical characterization techniques such as nanoindentation and atomic force microscopy. In this article, the design principles of these biological composites are discussed based on two shrimp species: Rimicaris exoculata and Pandalus platyceros.

Highly transparent, flexible, and thermally stable superhydrophobic ORMOSIL aerogel thin films.

PubMed

Budunoglu, Hulya; Yildirim, Adem; Guler, Mustafa O; Bayindir, Mehmet

2011-02-01

We report preparation of highly transparent, flexible, and thermally stable superhydrophobic organically modified silica (ORMOSIL) aerogel thin films from colloidal dispersions at ambient conditions. The prepared dispersions are suitable for large area processing with ease of coating and being directly applicable without requiring any pre- or post-treatment on a variety of surfaces including glass, wood, and plastics. ORMOSIL films exhibit and retain superhydrophobic behavior up to 500 °C and even on bent flexible substrates. The surface of the films can be converted from superhydrophobic (contact angle of 179.9°) to superhydrophilic (contact angle of <5°) by calcination at high temperatures. The wettability of the coatings can be changed by tuning the calcination temperature and duration. The prepared films also exhibit low refractive index and high porosity making them suitable as multifunctional coatings for many application fields including solar cells, flexible electronics, and lab on papers.

Resistive switching characteristics of thermally oxidized TiN thin films

NASA Astrophysics Data System (ADS)

Biju, K. P.

2018-04-01

Resistive switching characteristics of thermally oxidized TiN thin films and mechanisms were investigated.XPS results indicates Ti-O content decreases with sputter etching and Ti 2p peak shift towards lower binding energy due to formation of Ti-O-N and Ti-N. Pt/TiO2/TiON/TiN stack exhibits both clockwise switching (CWS) and counter clockwise switching(CCWS) characteristic depending on polarity of the applied voltage. However the transition from CCWS to CWS is irreversible. Two stable switching modes with opposite switching polarity and different electrical characteristics are found to coexist in the same memory cell. Clockwise switching shows filamentary characteristics that lead to faster switching with excellent retention at high temperature. Counter-clockwise switching exhibits homogeneous conduction with slower switching and moderate retention. The field-induced switching in both CCWS and CWS might be due to inhomogeneous defect distribution due to thermal oxidation.

Fracture Toughness of Thin Plates by the Double-Torsion Test Method

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Radovic, Miladin; Lara-Curzio, Edgar; Nelson, George

2006-01-01

Double torsion testing can produce fracture toughness values without crack length measurement that are comparable to those measured via standardized techniques such as the chevron-notch, surface-crack-in-flexure and precracked beam if the appropriate geometry is employed, and the material does not exhibit increasing crack growth resistance. Results to date indicate that 8 < W/d < 80 and L/W > 2 are required if crack length is not considered in stress intensity calculations. At L/W = 2, the normalized crack length should be 0.35 < a/L < 0.65; whereas for L/W = 3, 0.2 < a/L < 0.75 is acceptable. In addition, the load-points need to roll to reduce friction. For an alumina exhibiting increasing crack growth resistance, values corresponding to the plateau of the R-curve were measured. For very thin plates (W/d > 80) nonlinear effects were encountered.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Huilong; Hamilton, Reginald F., E-mail: rfhamilton@psu.edu; Horn, Mark W.

NiTi shape memory alloy (SMA) thin films were fabricated using biased target ion beam deposition (BTIBD), which is a new technique for fabricating submicrometer-thick SMA thin films, and the capacity to exhibit shape memory behavior was investigated. The thermally induced shape memory effect (SME) was studied using the wafer curvature method to report the stress-temperature response. The films exhibited the SME in a temperature range above room temperature and a narrow thermal hysteresis with respect to previous reports. To confirm the underlying phase transformation, in situ x-ray diffraction was carried out in the corresponding phase transformation temperature range. The B2more » to R-phase martensitic transformation occurs, and the R-phase transformation is stable with respect to the expected conversion to the B19′ martensite phase. The narrow hysteresis and stable R-phase are rationalized in terms of the unique properties of the BTIBD technique.« less

A two-layer structured PbI2 thin film for efficient planar perovskite solar cells.

PubMed

Ying, Chao; Shi, Chengwu; Wu, Ni; Zhang, Jincheng; Wang, Mao

2015-07-28

In this paper, a two-layer structured PbI2 thin film was constructed by the spin-coating procedure using a 0.80 M PbI2 solution in DMF and subsequent close-spaced vacuum thermal evaporation using PbI2 powder as a source. The bottom PbI2 thin film was compact with a sheet-like appearance, parallel to the FTO substrate, and can be easily converted to a compact perovskite thin film to suppress the charge recombination of the electrons of the TiO2 conduction band and the holes of the spiro-OMeTAD valence band. The top PbI2 thin film was porous with nano-sheet arrays, perpendicular to the FTO substrate, and can be easily converted to a porous perovskite thin film to improve the hole migration from the perovskite to spiro-OMeTAD and the charge separation at the perovskite/spiro-OMeTAD interface. The planar perovskite solar cells based on the two-layer structured PbI2 thin film exhibited a photoelectric conversion efficiency of 11.64%, along with an open-circuit voltage of 0.90 V, a short-circuit photocurrent density of 19.29 mA cm(-2) and a fill factor of 0.67.

Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

2011-09-01

The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

NASA Astrophysics Data System (ADS)

Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

2018-01-01

Low concentrations (<1 at%) of hafnium doped into diamond-like thin films (Hf-DLC) were deposited on 316L stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

NASA Astrophysics Data System (ADS)

Tsai, Chun-Chien; Lee, Yao-Jen; Chiang, Ko-Yu; Wang, Jyh-Liang; Lee, I.-Che; Chen, Hsu-Hsin; Wei, Kai-Fang; Chang, Ting-Kuo; Chen, Bo-Ting; Cheng, Huang-Chung

2007-11-01

In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-μm-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308cm2/Vs as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices.

Reduction of methanol crossover by thin cracked metal barriers at the interface between membrane and electrode in direct methanol fuel cells

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Jang, Segeun; Kim, Sang Moon; Ahn, Chi-Yeong; Hwang, Wonchan; Cho, Yong-Hun; Sung, Yung-Eun; Choi, Mansoo

2017-09-01

This work reports the successful reduction in methanol crossover by creating a thin cracked metal barrier at the interface between a Nafion® membrane and an electrode in direct methanol fuel cells (DMFCs). The cracks are generated by simple mechanical stretching of a metal deposited Nafion® membrane as a result of the elastic mismatch between the two attached surfaces. The cracked metal barriers with varying strains (∼0.5 and ∼1.0) are investigated and successfully incorporated into the DMFC. Remarkably, the membrane electrode assembly with the thin metal crack exhibits comparable ohmic resistance as well as reduction of methanol crossover, which enhanced the device performance.

Structural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol—gel dip coating process

NASA Astrophysics Data System (ADS)

Boukhenoufa, N.; Mahamdi, R.; Rechem, D.

2016-11-01

In this work, sol—gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ω·cm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

PubMed

Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

2011-03-01

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

Optoelectronic properties of novel amorphous CuAlO2/ZnO NWs based heterojunction

NASA Astrophysics Data System (ADS)

Bu, Ian Y. Y.

2013-08-01

Amorphous p-type CuAlO2 thin films were grown onto n-type crystalline ZnO NWs forming a heterojunction through the combination of sol-gel process and hydrothermal growth method. The effects of temperature on structure and optoelectronic properties of CuAlO2 thin films were investigated through various measurement techniques. It was found that the derived CuAlO2 is Al-rich with thin film. UV-Vis measurements showed that the deposited CuAlO2 films are semi-transparent with maximum transmittance ∼82% at 500 nm. Electrical characterization and integration into pn junction confirms that the amorphous CuAlO2 is p-type and exhibited photovoltaic behavior.

Fully transparent conformal organic thin-film transistor array and its application as LED front driving.

PubMed

Cui, Nan; Ren, Hang; Tang, Qingxin; Zhao, Xiaoli; Tong, Yanhong; Hu, Wenping; Liu, Yichun

2018-02-22

A fully transparent conformal organic thin-film field-effect transistor array is demonstrated based on a photolithography-compatible ultrathin metallic grid gate electrode and a solution-processed C 8 -BTBT film. The resulting organic field-effect transistor array exhibits a high optical transparency of >80% over the visible spectrum, mobility up to 2 cm 2 V -1 s -1 , on/off ratio of 10 5 -10 6 , switching current of >0.1 mA, and excellent light stability. The transparent conformal transistor array is demonstrated to adhere well to flat and curved LEDs as front driving. These results present promising applications of the solution-processed wide-bandgap organic semiconductor thin films in future large-scale transparent conformal active-matrix displays.

MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jie Guan; Atul Verma; Nguyen Minh

2003-04-01

This document summarizes the technical progress from September 2002 to March 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. The causes have been identified for the unstable open circuit voltage (OCV) and low performance exhibited by the anode-supported lanthanum gallate based cells from the earlier development. Promising results have been obtained in the area of synthesis of electrolyte and cathode powders, which showed excellent sintering and densification at low temperatures. The fabrication of cells using tapecalendering process for anode-supported thin lanthanum gallate electrolyte cells and their performance optimizationmore » is in progress.« less

Highly stretchable and conductive silver nanowire thin films formed by soldering nanomesh junctions.

PubMed

Chen, Shih-Pin; Liao, Ying-Chih

2014-10-07

Silver nanowires (AgNWs) have been widely used for stretchable and foldable conductors due to their percolating network nanostructure. To enhance the mechanical strength of AgNW thin films under extreme stretching conditions, in this study, we utilize a simple chemical reaction to join AgNW network connections. Upon applying a reactive ink over AgNW thin films, silver nanoparticles are preferentially generated over the nanowire junctions and solder the nanomesh structures. The soldered nanostructure reinforces the conducting network and exhibits no obvious change in electrical conductivity in the stretching or rolling process with elongation strains up to 120%. Several examples are also demonstrated to show potential applications of this material in stretchable electronic devices.

An in vivo pilot study of a microporous thin film nitinol-covered stent to assess the effect of porosity and pore geometry on device interaction with the vessel wall.

PubMed

Chun, Youngjae; Kealey, Colin P; Levi, Daniel S; Rigberg, David A; Chen, Yanfei; Tillman, Bryan W; Mohanchandra, K P; Shayan, Mahdis; Carman, Gregory P

2017-03-01

Sputter-deposited thin film nitinol constructs with various micropatterns were fabricated to evaluate their effect on the vessel wall in vivo when used as a covering for commercially available stents. Thin film nitinol constructs were used to cover stents and deployed in non-diseased swine arteries. Swine were sacrificed after approximately four weeks and the thin film nitinol-covered stents were removed for histopathologic evaluation. Histopathology revealed differences in neointimal thickness that correlated with the thin film nitinol micropattern. Devices covered with thin film nitinol with a lateral × vertical length = 20 × 40 µm diamond pattern had minimal neointimal growth with well-organized cell architecture and little evidence of ongoing inflammation. Devices covered with thin film nitinol with smaller fenestrations exhibited a relatively thick neointimal layer with inflammation and larger fenestrations showed migration of inflammatory and smooth muscle cells through the micro fenestrations. This "proof-of-concept" study suggests that there may be an ideal thin film nitinol porosity and pore geometry to encourage endothelialization and incorporation of the device into the vessel wall. Future work will be needed to determine the optimal pore size and geometry to minimize neointimal proliferation and in-stent stenosis.

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

PubMed Central

Wang, Fang-Hsing; Chen, Kun-Neng; Hsu, Chao-Ming; Liu, Min-Chu; Yang, Cheng-Fu

2016-01-01

In this study, Ga2O3-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p3/2 and Ga2p1/2 peaks, Zn2p3/2 and Zn2p1/2 peaks, the Ga3d peak, and O1s peaks for GZO thin films on glass and PI substrates were well compared. PMID:28335216

Ungulate exclusion, conifer thinning and mule deer forage in northeastern New Mexico

USGS Publications Warehouse

Kramer, David W.; Sorensen, Grant E.; Taylor, Chase A.; Cox, Robert D.; Gipson, Philip S.; Cain, James W.

2015-01-01

The southwestern United States has experienced expansion of conifer species (Juniperus spp. and Pinus ponderosa) into areas of semi-arid grassland over the past century. The expansion of conifers can limit palatable forage and reduce grass and forb communities. Conifer species are sometimes thinned through hydraulic mulching or selective cutting. We assessed the effects of these treatments on mule deer (Odocoileus hemionus) habitat in northeastern New Mexico to determine if conifer thinning improved cover of preferred forage species for mule deer in areas with and without ungulates. We measured plant cover and occurrence of preferred forage species in the summers of 2011 and 2012. An ongoing regional drought probably reduced vegetation response, with preferred forage species and herbaceous cover responding to conifer thinning or ungulate exclusion immediately following treatment, but not the following year. In 2011, areas that received thinning treatments had a higher abundance of preferred forage when compared to sites with no treatment. Grass coverage exhibited an immediate response in 2011, with ungulate exclosures containing 8% more coverage than areas without exclosures. The results suggest that conifer thinning and ungulate exclusion may elicit a positive response, however in the presence of drought; the positive effects are only short-term.

Effect of oxygen partial pressure and VO2 content on hexagonal WO3 thin films synthesized by pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Kaushal, Ajay; Kaur, Davinder

2011-06-01

We report on the effect of oxygen partial pressure and vacuum annealing on structural and optical properties of pulsed laser-deposited nanocrystalline WO3 thin films. XRD results show the hexagonal phase of deposited WO3 thin films. The crystallite size was observed to increase with increase in oxygen partial pressure. Vacuum annealing changed the transparent as-deposited WO3 thin film to deep shade of blue color which increases the optical absorption of the film. The origin of this blue color could be due to the presence of oxygen vacancies associated with tungsten ions in lower oxidation states. In addition, the effects of VO2 content on structural, electrochemical, and optical properties of (WO3)1- x (VO2) x nanocomposite thin films have also been systematically investigated. Cyclic voltammogram exhibits a modification with the appearance of an extra cathodic peak for VO2-WO3 thin film electrode with higher VO2 content ( x ≥ 0.2). Increase of VO2 content in (WO3)1- x (VO2) x films leads to red shift in optical band gap.

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

PubMed

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

PubMed

Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-08-16

A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solidmore » oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.« less

Simulations of shear-thinning frictional non-Brownian suspensions

NASA Astrophysics Data System (ADS)

Lemaire, Elisabeth; Lobry, Laurent; Blanc, Frederic; Peters, Francois; RSC Team

2017-11-01

Most non-Brownian suspensions exhibit non-Newtonian behaviours such as anisotropic normal stresses, shear-thickening or shear-thinning. The later is still largely an open question. Acrivos wet al. (JoR 1994) proposed that particle resuspension is responsible for the apparent shear-thinning behavior in a cylindrical Couette rheometer. Another explanation has been suggested by Vasquez-Quesada et al. (PRL 2017), who noticed that some polymeric suspending liquids themselves are shear-thinning for the high shear-rate values involved in the narrow gaps between particles. Here we propose that the shear-thinning behaviour is directly connected to the solid contact between particles that has been shown to play a crucial role in the rheological behaviour of concentrated non-Brownian suspensions. In particular, it has been recently shown that frictional contact between particles greatly enhances the viscosity. Even though the friction coefficient between macroscopic surfaces does not depend on the load, it may be not the case at the scale of the low load contact between particles in suspensions. Here, we present discrete numerical simulations where the friction coefficient decreases with the interparticle forces. The obtained shear-thinning behaviour is in good agreement with our experiments.

Influence of a novel co-doping (Zn + F) on the physical properties of nano structured (1 1 1) oriented CdO thin films applicable for window layer of solar cell

NASA Astrophysics Data System (ADS)

Anitha, M.; Saravanakumar, K.; Anitha, N.; Amalraj, L.

2018-06-01

Un-doped and co-doped (Zn + F) cadmium oxide (CdO) thin films were prepared by modified spray pyrolysis technique using a nebulizer on glass substrates kept at 200 °C. They were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy, Hall Effect and photoluminescence (PL) respectively. The thin films were having thickness in the range of 520-560 nm. They were well crystalline and displayed high transparency of about >70% in the visible region. It was clearly seen from the SEM photographs that co-doping causes notable changes in the surface morphology. Electrical study exhibited the resistivity of co-doped CdO thin films drastically fell to 1.43 × 10-4 Ω-cm compared with the un-doped CdO thin film. The obtained PL spectra were well corroborated with the structural and optical studies. The high transparency, wide band gap energy and enhanced electrical properties obtained infer that Zn + F co-doped CdO thin films find application in optoelectronic devices, especially in window layer of solar cells.

Optical, structural and electrochromic behavior studies on nanocomposite thin film of aniline, o-toluidine and WO3

NASA Astrophysics Data System (ADS)

Najafi-Ashtiani, Hamed; Bahari, Ali

2016-08-01

In the field of materials for electrochromic (EC) applications much attention was paid to the derivatives of aniline. We report on the optical, structural and electrochromic properties of electrochromic thin film based on composite of WO3 nanoparticles and copolymer of aniline and o-toluidine prepared by electrochemical polymerization method on fluorine doped tin oxide (FTO) coated glass. The thin film was studied by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The morphology of prepared thin film was characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and the thermal gravimetric analysis (TGA) as well. The optical spectra of nanocomposite thin film were characterized in the 200-900 nm wavelength range and EC properties of nanocomposite thin film were studied by cyclic voltammetry (CV). The calculation of optical band gaps of thin film exhibited that the thin film has directly allowed transition with the values of 2.63 eV on first region and 3.80 eV on second region. Dispersion parameters were calculated based on the single oscillator model. Finally, important parameters such as dispersion energy, oscillator energy and lattice dielectric constant were determined and compared with the data from other researchers. The nonlinear optical properties such as nonlinear optical susceptibility, nonlinear absorption coefficient and nonlinear refractive index were extracted. The obtained results of nanocomposite thin film can be useful for the optoelectronic applications.

A microfluidic approach to water-rock interactions using thin rock sections: Pb and U sorption onto thin shale and granite sections.

PubMed

Oh, Youn Soo; Jo, Ho Young; Ryu, Ji-Hun; Kim, Geon-Young

2017-02-15

The feasibility of using microfluidic tests to investigate water-rock (mineral) interactions in fractures regarding sorption onto thin rock sections (i.e., shale and granite) of lead (Pb) and uranium (U) was evaluated using a synthetic PbCl 2 solution and uranium-containing natural groundwater as fluids. Effluent composition and element distribution on the thin rock sections before and after microfluidic testing were analyzed. Most Pb removal (9.8mg/cm 2 ) occurred within 3.5h (140 PVF), which was 74% of the total Pb removal (13.2mg/cm 2 ) at the end of testing (14.5h, 560 PVF). Element composition on the thin shale sections determined by μ-XRF analysis indicated that Pb removal was related primarily to Fe-containing minerals (e.g., pyrite). Two thin granite sections (biotite rich, Bt-R and biotite poor, Bt-P) exhibited no marked difference in uranium removal capacity, but a slightly higher amount of uranium was removed onto the thin Bt-R section (266μg/cm 2 ) than the thin Bt-P section (240μg/cm 2 ) within 120h (4800 PVF). However, uranium could not be detected by micro X-ray fluorescence (μ-XRF) analysis, likely due to the detection limit. These results suggest that microfluidic testing on thin rock sections enables quantitative evaluation of rock (mineral)-water interactions at the micro-fracture or pore scale. Copyright © 2016 Elsevier B.V. All rights reserved.

Study of Swift Heavy Ion Modified Conducting Polymer Composites for Application as Gas Sensor

PubMed Central

Srivastava, Alok; Singh, Virendra; Dhand, Chetna; Kaur, Manindar; Singh, Tejvir; Witte, Karin; Scherer, Ulrich W.

2006-01-01

A polyaniline-based conducting composite was prepared by oxidative polymerisation of aniline in a polyvinylchloride (PVC) matrix. The coherent free standing thin films of the composite were prepared by a solution casting method. The polyvinyl chloride-polyaniline composites exposed to 120 MeV ions of silicon with total ion fluence ranging from 1011 to 1013 ions/cm2, were observed to be more sensitive towards ammonia gas than the unirradiated composite. The response time of the irradiated composites was observed to be comparably shorter. We report for the first time the application of swift heavy ion modified insulating polymer conducting polymer (IPCP) composites for sensing of ammonia gas.

Upconversion in solar cells

PubMed Central

2013-01-01

The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells. PMID:23413889

Hot spaghetti: Viscous gravitational collapse

NASA Astrophysics Data System (ADS)

Müller, Berndt; Schäfer, Andreas

2018-02-01

We explore the fate of matter falling into a macroscopic Schwarzschild black hole for the simplified case of a radially collapsing thin spherical shell for which the back reaction of the geometry can be neglected. We treat the internal dynamics of the in-falling matter in the framework of viscous relativistic hydrodynamics and calculate how the internal temperature of the collapsing matter evolves as it falls toward the Schwarzschild singularity. We find that viscous hydrodynamics fails when either the dissipative radial pressure exceeds the thermal pressure and the total radial pressure becomes negative, or the time scale of variation of the tidal forces acting on the collapsing matter becomes shorter than the characteristic hydrodynamic response time.

Molecularly imprinted hydroxyapatite thin film for bilirubin recognition.

PubMed

Yang, Zhengpeng; Zhang, Chunjing

2011-11-15

A novel piezoelectric sensor has been developed for bilirubin (BR) detection, based on the modification of molecularly imprinted hydroxyapatite (HAP) film onto a quartz crystal by molecular imprinting and surface sol-gel technique. The performance of the developed BR biosensor was evaluated and the results indicated that a sensitive BR biosensor could be fabricated. The obtained BR biosensor presents high-selectivity monitoring of BR, better reproducibility, shorter response time (37 min), wider linear range (0.05-80μM) and lower detection limit (0.01μM). The analytical application of the BR biosensor confirms the feasibility of BR detection in serum sample. Copyright © 2011 Elsevier B.V. All rights reserved.

Broadband parametric amplifiers based on nonlinear kinetic inductance artificial transmission lines

NASA Astrophysics Data System (ADS)

Chaudhuri, S.; Li, D.; Irwin, K. D.; Bockstiegel, C.; Hubmayr, J.; Ullom, J. N.; Vissers, M. R.; Gao, J.

2017-04-01

We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different phase matching techniques: periodic impedance loading and resonator phase shifters placed periodically along the transmission line. Our design offers several advantages over previous CPW-based amplifiers, including intrinsic 50 Ω characteristic impedance, natural suppression of higher pump harmonics, lower required pump power, and shorter total trace length. Experimental realizations of both versions of the amplifiers are demonstrated. With a transmission line length of 20 cm, we have achieved gains of 15 dB over several GHz of bandwidth.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

VUV lithography

DOEpatents

George, E.V.; Oster, Y.; Mundinger, D.C.

1990-12-25

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

Effects of proton irradiation on thin-film materials for optical filters

NASA Astrophysics Data System (ADS)

Scaglione, Salvatore; Piegari, Angela; Sytchkova, Anna; Jakšić, Milko

2017-11-01

The behaviour of interference optical filters for space applications has been investigated under low energy proton irradiation. In order to understand the behaviour of the interference coating subjected to proton irradiation, the interaction of protons with coating and substrate was simulated by the SRIM code. A beam of protons of 60 KeV with an integrated fluence of 1013 p+/cm2 was used. The spectral transmittances of fused silica, TiO2 and HfO2 single layers and interference coatings were measured before and after irradiation and, according to simulations, no significant effects were detected in the visible-near infrared spectrum, while some variations appeared at shorter wavelengths.

Optical Properties and Electrochemical Performance of LiFePO4 Thin Films Deposited on Transparent Current Collectors.

PubMed

Lee, HyunSeok; Yim, Haena; Kim, Kwang-Bum; Choi, Ji-Won

2015-11-01

LiFePO4 thin film cathodes are deposited on various transparent conducting oxide thin films on glass, which are used as cathode current collectors. The XRD patterns show that the thin films have the phase of LiFePO4 with an ordered olivine structure indexed to the orthorhombic Pmna space group. LiFePO4 thin film deposited on various TCO glass substrates exhibits transmittance of about 53%. The initial specific discharge capacities of LiFePO4 thin films are 25.0 μAh/cm2 x μm on FTO, 33.0 μAh/cm2 x μm on ITO, and 13.0 μAh/cm2 x μm on AZO coated glass substrates. Interestingly, the retention capacities of LiFePO4 thin films are 76.0% on FTO, 31.2% on ITO, and 37.7% on AZO coated glass substrates at 20th cycle. The initial specific discharge capacity of the LiFePO4/FTO electrode is slightly lower, but the discharge capacities of the LiFePO4/FTO electrode relatively decrease less than those of the others such as LiFePO4/ITO and LiFePO4/AZO with cycling. The results reported here provide the high transparency of LiFePO4 thin films cathode materials and the good candidate as FTO current collector of the LiFePO4 thin film cathode of transparent thin film rechargeable batteries due to its high transparency and cyclic retention.

Atmospheric deposition process for enhanced hybrid organic-inorganic multilayer barrier thin films for surface protection

NASA Astrophysics Data System (ADS)

Rehman, Mohammad Mutee ur; Kim, Kwang Tae; Na, Kyoung Hoan; Choi, Kyung Hyun

2017-11-01

In this study, organic polymer poly-vinyl acetate (PVA) and inorganic aluminum oxide (Al2O3) have been used together to fabricate a hybrid barrier thin film for the protection of PET substrate. The organic thin films of PVA were developed through roll to roll electrohydrodynamic atomization (R2R-EHDA) whereas the inorganic thin films of Al2O3 were grown by roll to roll spatial atmospheric atomic layer deposition (R2R-SAALD) for mass production. The use of these two technologies together to develop a multilayer hybrid organic-inorganic barrier thin films under atmospheric conditions is reported for the first time. These multilayer hybrid barrier thin films are fabricated on flexible PET substrate. Each layer of Al2O3 and PVA in barrier thin film exhibited excellent morphological, chemical and optical properties. Extremely uniform and atomically thin films of Al2O3 with average arithmetic roughness (Ra) of 1.64 nm and 1.94 nm respectively concealed the non-uniformity and irregularities in PVA thin films with Ra of 2.9 nm and 3.6 nm respectively. The optical transmittance of each layer was ∼ 80-90% while the water vapor transmission rate (WVTR) of hybrid barrier was in the range of ∼ 2.3 × 10-2 g m-2 day-1 with a total film thickness of ∼ 200 nm. Development of such hybrid barrier thin films with mass production and low cost will allow various flexible electronic devices to operate in atmospheric conditions without degradation of their properties.

Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time

NASA Astrophysics Data System (ADS)

Yoo, Myoung Han; Ko, Pil Ju; Kim, Nam-Hoon; Lee, Hyun-Yong

2017-12-01

Preparation of Cu(In,Ga)Se2 (CIGS) thin films has continued to face problems related to the selenization of sputtered Cu-In-Ga precursors when using H2Se vapor in that the materials are highly toxic and the facilities extremely costly. Another obstacle facing the production of CIGS thin films has been the required annealing temperature, as it relates to the decomposition temperature of a typical flexible polymer substrate. A novel laser-annealing process for CIGS thin films, which does not involve the selenization process and which can be performed at a lower temperature, has been proposed. Following sputtering with a Cu0.9In0.7Ga0.3Se2 target, the laser-annealing of the CIGS thin film was performed using a continuous 532-nm Nd:YAG laser with an annealing time of 200 - 1000 s at a laser optical power of 2.75 W. CIGS chalcopyrite (112), (220/204), and (312/116) phases, with some weak diffraction peaks corresponding to the Cu-Se- or the In-Se-related phases, were successfully obtained for all the CIGS thin films that had been laser-annealed at 2.75 W. The lattice parameters, the d-spacing, the tetragonal distortion parameter, and the strain led to the crystallinity being worse and grain size being smaller at 600 s while better crystallinity was obtained at 200 and 800 s, which was closely related to the deviations from molecularity and stoichiometry, which were greatest at 600 s while the values exhibited near-stoichiometric compositions at 200 and 800 s. The band gaps of the laser-annealed CIGS thin films were within a range of 1.765 - 1.977 eV and depended on the internal stress. The mean absorbance of the laser-annealed CIGS thin films was within a range of 1.598 - 1.900, suggesting that approximately 97.47 - 98.74% of the incident photons in the visible spectral region were absorbed by this 400-nm film. The conductivity types exhibited the same deviations (Δ m > 0 and Δ s < 0) in all the laser-annealed CIGS thin films. After laser-annealing, the resistivity fell abruptly to a range of 3.551 × 10 -2 - 1.022 × 10 -1 Ω·cm. The carrier concentration was on the order of 1019 - 1021 cm -3, and the carrier mobility was 5.7 × 10 -2 - 5.7 × 100 cm2/V·s.

A high-sensitivity torsional pendulum for polymeric films and fibres

NASA Technical Reports Server (NTRS)

Aghili-Kermani, H.; Obrien, T.; Armeniades, C. D.; Roberts, J. M.

1976-01-01

A free oscillation torsion pendulum is described, which has been designed to measure accurately the dynamic shear modulus and logarithmic decrement of polymeric thin films and fibers, at frequencies of 0.1 to 10 Hz and a temperature range of 4.2 to 450 K. The instrument can also provide in situ tensile deformations of up to 5%. The specimen geometry necessary to obtain reliable modulus measurements with thin films is discussed, and typical data are presented which exhibit hitherto unreported relaxation processes, discernible by this instrument.

Oriented niobate ferroelectric thin films for electrical and optical devices

DOEpatents

Wessels, Bruce W.; Nystrom, Michael J.

2001-01-01

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.

PubMed

Hyung, Gun Woo; Wang, Jian-Xun; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Young Kwan

2013-06-01

We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).

Electronic transport properties of nanostructured MnSi-films

NASA Astrophysics Data System (ADS)

Schroeter, D.; Steinki, N.; Scarioni, A. Fernández; Schumacher, H. W.; Süllow, S.; Menzel, D.

2018-05-01

MnSi, which crystallizes in the cubic B20 structure, shows intriguing magnetic properties involving the existence of skyrmions in the magnetic phase diagram. Bulk MnSi has been intensively investigated and thoroughly characterized, in contrast to MnSi thin film, which exhibits widely varying properties in particular with respect to electronic transport. In this situation, we have set out to reinvestigate the transport properties in MnSi thin films by means of studying nanostructure samples. In particular, Hall geometry nanostructures were produced to determine the intrinsic transport properties.

Magnetic and structural properties of CoFe 2O 4 thin films synthesized via a sol-gel process

NASA Astrophysics Data System (ADS)

dos S. Duque, J. G.; Macêdo, M. A.; Moreno, N. O.; Lopez, J. L.; Pfanes, H.-D.

2001-05-01

Using a sol-gel process having the coconut water as a precursor of organic chain, we synthesized thin films of cobalt ferrite. The films were characterized by using a SQUID magnetometer, an X-ray diffractometer, an X-ray spectrophotometer, Mössbauer spectroscopy and atomic force microscope. Co ferrite films annealed at 500°C for 2 h show grain sizes between 10 and 20 nm, grown as single-phase spinel structure and exhibit high coercivity and a moderate saturation magnetization (above 30 kOe).

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

PubMed

Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2003-05-23

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

Two-dimensional ultra-thin SiO(x) (0 < x < 2) nanosheets with long-term cycling stability as lithium ion battery anodes.

PubMed

Sun, Lin; Su, Tingting; Xu, Lei; Liu, Meipin; Du, Hong-Bin

2016-03-21

Ultra-thin SiO(x) (0 < x < 2) nanosheets were obtained via a convenient solvothermal route from a Zintl compound CaSi2. After carbon coating, the SiOx@C nanosheet anodes exhibit high capacity, good rate and superior cycling performance for high-capacity lithium ion battery applications. The specific capacity can be maintained as high as 760 mA h g(-1) with almost no capacity decay after 400 cycles at a current density of 0.5 A g(-1).

Morphology and electronic transport of polycrystalline pentacene thin-film transistors

NASA Astrophysics Data System (ADS)

Knipp, D.; Street, R. A.; Völkel, A. R.

2003-06-01

Temperature-dependent measurements of thin-film transistors were performed to gain insight in the electronic transport of polycrystalline pentacene. Devices were fabricated with plasma-enhanced chemical vapor deposited silicon nitride gate dielectrics. The influence of the dielectric roughness and the deposition temperature of the thermally evaporated pentacene films were studied. Although films on rougher gate dielectrics and films prepared at low deposition temperatures exhibit similar grain size, the electronic properties are different. Increasing the dielectric roughness reduces the free carrier mobility, while low substrate temperature leads to more and deeper hole traps.

Semiconductor-metal graded-index composite thin films for infrared applications

NASA Technical Reports Server (NTRS)

Lamb, James L.; Nagendra, C. L.

1994-01-01

Theoretical/experimental studies have been carried out on germanium:silver (Ge:Ag) graded-index composite thin films which demonstrate that graded coatings, consisting of varied concentrations of Ag with respect to the Ge film thickness, exhibit different optical properties ranging from selective infrared (IR) reflectance to broadband IR absorptance. The graded coatings have been produced by dc magnetron cosputtering of Ge and Ag and the spectral properties are found to be stable against temperature. The coatings have been applied to an infrared tunnel sensor (micro-Golay cell) to improve the device performance.

Preparation of polymeric diacetylene thin films for nonlinear optical applications

NASA Technical Reports Server (NTRS)

Frazier, Donald O. (Inventor); Mcmanus, Samuel P. (Inventor); Paley, Mark S. (Inventor); Donovan, David N. (Inventor)

1995-01-01

A method for producing polymeric diacetylene thin films having desirable nonlinear optical characteristics has been achieved by producing amorphous diacetylene polymeric films by simultaneous polymerization of diacetylene monomers in solution and deposition of polymerized diacetylenes on to the surface of a transparent substrate through which ultraviolet light has been transmitted. These amorphous polydiacetylene films produced by photo-deposition from solution possess very high optical quality and exhibit large third order nonlinear optical susceptibilities, such properties being suitable for nonlinear optical devices such as waveguides and integrated optics.

Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

NASA Astrophysics Data System (ADS)

Lee, J.; Esayan, S.; Prohaska, J.; Safari, A.

1994-01-01

The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 s) and slow (˜hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.

Hybridization effects on wave packet dynamics in topological insulator thin films.

PubMed

Yar, Abdullah; Naeem, Muhammad; Khan, Safi Ullah; Sabeeh, Kashif

2017-11-22

Theoretical study of electron wave packet dynamics in topological insulator (TI) thin films is presented. We have investigated real space trajectories and spin dynamics of electron wave packets in TI thin films. Our focus is on the role of hybridization between the electronic states of the two surfaces. This allows us to access the crossover regime of a thick film with no hybridization to a thin film with finite hybridization. We show that the electron wave packet undergoes side-jump motion in addition to zitterbewegung. The oscillation frequency of zitterbewegung can be tuned by the strength of hybridization, which in turn can be tuned by the thickness of the film. We find that the spin expectations also exhibit zitterbewegung tunable by hybridization. We also show that it is possible to obtain persistent zitterbewegung, oscillations which do not decay, in both the real space trajectories as well as spin dynamics. The zitterbewegung oscillation frequency in TI thin films falls in a parameter regime where it might be possible to observe these effects using present day experimental techniques.

Novel antifouling nano-enhanced thin-film composite membrane containing cross-linkable acrylate-alumoxane nanoparticles for water softening.

PubMed

Ghaemi, Negin

2017-01-01

A novel thin-film composite (TFC) nanofiltration membrane was prepared using polymerization of pyrrole monomers on the PES ultrafiltration membrane. To improve the characteristics of hydrophobic polypyrrole (PPy) thin-film layer, cross-linkable acrylate-functionalized alumoxane nanoparticles with different concentrations were embedded into the thin-film during polymerization process, and thin-film nanocomposite (TFNC) membranes were prepared. The characteristics and performance of TFC and TFNC membranes were assessed through the morphological analyses (SEM, AFM), measurement of hydrophilicity and solid-liquid interfacial free energy, water permeability and Mg 2+ removal tests. Addition of proper amount of nanoparticles into the polymerization mixture led to the preparation of membranes with more hydrophilic, thinner and smoother active layer as well as higher water permeability compared to TFC control membrane. TFNC membrane prepared with 0.025g of nanoparticles was the most efficient membrane since it exhibited the highest rejection of MgCl 2 and MgSO 4 salts. Antifouling capability of membranes, in terms of flux recovery and fouling parameters, demonstrated the high tolerance of TFNC against fouling. Copyright © 2016 Elsevier Inc. All rights reserved.

Disconnecting structure and dynamics in glassy thin films

PubMed Central

Sussman, Daniel M.; Cubuk, Ekin D.; Liu, Andrea J.

2017-01-01

Nanometrically thin glassy films depart strikingly from the behavior of their bulk counterparts. We investigate whether the dynamical differences between a bulk and thin film polymeric glass former can be understood by differences in local microscopic structure. Machine learning methods have shown that local structure can serve as the foundation for successful, predictive models of particle rearrangement dynamics in bulk systems. By contrast, in thin glassy films, we find that particles at the center of the film and those near the surface are structurally indistinguishable despite exhibiting very different dynamics. Next, we show that structure-independent processes, already present in bulk systems and demonstrably different from simple facilitated dynamics, are crucial for understanding glassy dynamics in thin films. Our analysis suggests a picture of glassy dynamics in which two dynamical processes coexist, with relative strengths that depend on the distance from an interface. One of these processes depends on local structure and is unchanged throughout most of the film, while the other is purely Arrhenius, does not depend on local structure, and is strongly enhanced near the free surface of a film. PMID:28928147

High performance VO2 thin films fabricated by room-temperature reactive magnetron sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Zhan, Yongjun; Xiao, Xiudi; Lu, Yuan; Cao, Ziyi; Cheng, Haoliang; Shi, Jifu; Xu, Gang

2017-10-01

The VOx thin films are successfully prepared on glass substrate by reactive magnetron sputtering at room-temperature, and subsequently annealed by rapid thermal annealing system in N2 from 0.5Pa to 10000Pa. The effects of annealing pressure on the optical performance and phase transition temperature (Tc) of VOx thin films are systematically investigated. The results show that the VOx thin films exhibit good performance with Tlum of 28.17%, ΔTsol of 12.69%, and Tc of 42. The annealing pressure had an obvious influence on the grain size, which can be attributed to light scattering effects by gas molecule. Compared with oxygen vacancy defects, the grain size plays a decisive role in the regulation of Tc. The restricting the growth of grain can be reduced the Tc, and a little deterioration effect on optical performance can be observed. In addition, the method in this paper not only depressed the Tc, but also simplified the process and improved efficiency, which will provide guidance for the preparation and application of VOx thin films.

Nanoindentation data analysis of loading curve performed on DLC thin films: Effect of residual stress on the elasto-plastic properties

NASA Astrophysics Data System (ADS)

Ouchabane, M.; Dublanche-Tixier, Ch.; Dergham, D.

2017-11-01

The present work is a contribution to the understanding of the mechanical behavior of DLC thin films through nanoindentation tests. DLC films of different thicknesses deposited by the PECVD process on a silicon substrate contain high residual compressive stresses when they are very thin and the stresses become relatively low and more relaxed as the film thickens. These different levels of residual stress influence the values of hardness (H) and Young's modulus (E) obtained when probing the film-substrate system by nanoindentation. It is observed that the DLC layers exhibit different mechanical behaviors even when they are deposited under the same conditions. It is proposed that the compressive stress induces structural modifications resulting in modifying the elasto-plastic properties of each thin film-substrate system. Data analysis of the loading curve can provide information on the elasto-plastic properties of DLC thin films, particularly the stiffness (S) and Er2/H, as a function of residual compressive stresses. The structural changes induced by residual stresses were probed by using Raman spectroscopy and correlated to the mechanical properties.

Metallic and Ceramic Thin Film Thermocouples for Gas Turbine Engines

PubMed Central

Tougas, Ian M.; Amani, Matin; Gregory, Otto J.

2013-01-01

Temperatures of hot section components in today's gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges) for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today's engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire) thermocouples. PMID:24217356

Antimicrobial activity of biopolymeric thin films containing flavonoid natural compounds and silver nanoparticles fabricated by MAPLE: A comparative study

NASA Astrophysics Data System (ADS)

Cristescu, R.; Visan, A.; Socol, G.; Surdu, A. V.; Oprea, A. E.; Grumezescu, A. M.; Chifiriuc, M. C.; Boehm, R. D.; Yamaleyeva, D.; Taylor, M.; Narayan, R. J.; Chrisey, D. B.

2016-06-01

The purpose of this study was to investigate the interactions between microorganisms, including the planktonic and adherent organisms, and biopolymer (polyvinylpyrrolidone), flavonoid (quercetin dihydrate and resveratrol)-biopolymer, and silver nanoparticles-biopolymer composite thin films that were deposited using matrix assisted pulsed laser evaporation (MAPLE). A pulsed KrF* excimer laser source was used to deposit the aforementioned composite thin films, which were characterized using Fourier transform infrared spectroscopy (FT-IR), infrared microscopy (IRM), scanning electron microscopy (SEM), Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The antimicrobial activity of thin films was quantified using an adapted disk diffusion assay against Gram-positive and Gram-negative bacteria strains. FT-IR, AFM and SEM studies confirmed that MAPLE may be used to fabricate thin films with chemical properties corresponding to the input materials as well as surface properties that are appropriate for medical use. The silver nanoparticles and flavonoid-containing films exhibited an antimicrobial activity both against Gram-positive and Gram-negative bacterial strains demonstrating the potential use of these hybrid systems for the development of novel antimicrobial strategies.

Metallic and ceramic thin film thermocouples for gas turbine engines.

PubMed

Tougas, Ian M; Amani, Matin; Gregory, Otto J

2013-11-08

Temperatures of hot section components in today's gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges) for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today's engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire) thermocouples.

Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

NASA Astrophysics Data System (ADS)

Rajpal, Shashikant; Kumar, S. R.

2018-04-01

Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

Disproportionate loss of thin filaments in human soleus muscle after 17-day bed rest

NASA Technical Reports Server (NTRS)

Riley, D. A.; Bain, J. L.; Thompson, J. L.; Fitts, R. H.; Widrick, J. J.; Trappe, S. W.; Trappe, T. A.; Costill, D. L.

1998-01-01

Previously we reported that, after 17-day bed rest unloading of 8 humans, soleus slow fibers atrophied and exhibited increased velocity of shortening without fast myosin expression. The present ultrastructural study examined fibers from the same muscle biopsies to determine whether decreased myofilament packing density accounted for the observed speeding. Quantitation was by computer-assisted morphometry of electron micrographs. Filament densities were normalized for sarcomere length, because density depends directly on length. Thick filament density was unchanged by bed rest. Thin filaments/microm2 decreased 16-23%. Glycogen filled the I band sites vacated by filaments. The percentage decrease in thin filaments (Y) correlated significantly (P < 0.05) with the percentage increase in velocity (X), (Y = 0.1X + 20%, R2 = 0.62). An interpretation is that fewer filaments increases thick to thin filament spacing and causes earlier cross-bridge detachment and faster cycling. Increased velocity helps maintain power (force x velocity) as atrophy lowers force. Atrophic muscles may be prone to sarcomere reloading damage because force/microm2 was near normal, and force per thin filament increased an estimated 30%.

Thermally evaporated methylammonium tin triiodide thin films for lead-free perovskite solar cell fabrication

DOE PAGES

Yu, Yue; Zhao, Dewei; Grice, Corey R.; ...

2016-09-16

Here, we report on the synthesis of methylammonium tin triiodide (MASnI 3) thin films at room temperature by a hybrid thermal evaporation method and their application in fabricating lead (Pb)-free perovskite solar cells. The as-deposited MASnI 3 thin films exhibit smooth surfaces, uniform coverage across the entire substrate, and strong crystallographic preferred orientation along the < 100 > direction. By incorporating this film with an inverted planar device architecture, our Pb-free perovskite solar cells are able to achieve an open-circuit voltage ( V oc) up to 494 mV. The relatively high V oc is mainly ascribed to the excellent surfacemore » coverage, the compact morphology, the good stoichiometry control of the MASnI 3 thin films, and the effective passivation of the electron-blocking and hole-blocking layers. Finally, our results demonstrate the potential capability of the hybrid evaporation method to prepare high-quality Pb-free MASnI 3 perovskite thin films which can be used to fabricate efficient Pb-free perovskite solar cells.« less

Electrical and Infrared Optical Properties of Vanadium Oxide Semiconducting Thin-Film Thermometers

NASA Astrophysics Data System (ADS)

Zia, Muhammad Fakhar; Abdel-Rahman, Mohamed; Alduraibi, Mohammad; Ilahi, Bouraoui; Awad, Ehab; Majzoub, Sohaib

2017-10-01

A synthesis method has been developed for preparation of vanadium oxide thermometer thin film for microbolometer application. The structure presented is a 95-nm thin film prepared by sputter-depositing nine alternating multilayer thin films of vanadium pentoxide (V2O5) with thickness of 15 nm and vanadium with thickness of 5 nm followed by postdeposition annealing at 300°C in nitrogen (N2) and oxygen (O2) atmospheres. The resulting vanadium oxide (V x O y ) thermometer thin films exhibited temperature coefficient of resistance (TCR) of -3.55%/°C with room-temperature resistivity of 2.68 Ω cm for structures annealed in N2 atmosphere, and TCR of -3.06%/°C with room-temperature resistivity of 0.84 Ω cm for structures annealed in O2 atmosphere. Furthermore, optical measurements of N2- and O2-annealed samples were performed by Fourier-transform infrared ellipsometry to determine their dispersion curves, refractive index ( n), and extinction coefficient ( k) at wavelength from 7000 nm to 14,000 nm. The results indicate the possibility of applying the developed materials in thermometers for microbolometers.

On the Nature and Extent of Optically Thin Marine low Clouds

NASA Technical Reports Server (NTRS)

Leahy, L. V.; Wood, R.; Charlson, R. J.; Hostetler, C. A.; Rogers, R. R.; Vaughan, M. A.; Winker, D. M.

2012-01-01

Macrophysical properties of optically thin marine low clouds over the nonpolar oceans (60 deg S-60 deg N) are measured using 2 years of full-resolution nighttime data from the Cloud-Aerosol Lidar with Orthogonal Polarization (CALIOP). Optically thin clouds, defined as the subset of marine low clouds that do not fully attenuate the lidar signal, comprise almost half of the low clouds over the marine domain. Regionally, the fraction of low clouds that are optically thin (f(sub thin,cld)) exhibits a strong inverse relationship with the low-cloud cover, with maxima in the tropical trades (f(sub thin,cld) greater than 0.8) and minima in regions of persistent marine stratocumulus and in midlatitudes (f(sub thin,cld) less than 0.3). Domain-wide, a power law fit describes the cloud length distribution, with exponent beta = 2.03 +/- 0.06 (+/-95% confidence interval). On average, the fraction of a cloud that is optically thin decreases from approximately 1 for clouds smaller than 2 km to less than 0.3 for clouds larger than 30 km. This relationship is found to be independent of region, so that geographical variations in the cloud length distribution explain three quarters of the variance in f(sub thin,cld). Comparing collocated trade cumulus observations from CALIOP and the airborne High Spectral Resolution Lidar reveals that clouds with lengths smaller than are resolvable with CALIOP contribute approximately half of the low clouds in the region sampled. A bounded cascade model is constructed to match the observations from the trades. The model shows that the observed optically thin cloud behavior is consistent with a power law scaling of cloud optical depth and suggests that most optically thin clouds only partially fill the CALIOP footprint.

Structure-property relations in sputter deposited epitaxial (1-x)Pb(Mg1/3Nb2/3)O3- xPbTiO3 thin films

NASA Astrophysics Data System (ADS)

Frederick, Joshua C.

Lead-based ferroelectric materials are of significant technological importance for sensing and actuation due to their high piezoelectric performance (i.e., the ability to convert an electrical signal to mechanical displacement, and vice versa). Traditionally, bulk ceramic or single crystals materials have filled these roles; however, emerging technologies stand to benefit by incorporating thin films to achieve miniaturization while maintaining high efficiency and sensitivity. Currently, chemical systems that have been well characterized in bulk form (e.g. Pb(Mg1/3Nb2/3)O3- xPbTiO3, or PMN-xPT) require further study to optimize both the chemistry and structure for deployment in thin film devices. Furthermore, the effect of internal electric fields is more significant at the length scales of thin films, resulting in self biases that require compensation to reveal their intrinsic dielectric response. To this end, the structure-property relations of epitaxial PMN-xPT films sputter deposited on a variety of substrates were investigated. Attention was paid to how the structure (i.e., strain state, crystal structure, domain configuration, and defects) gave rise to the ferroelectric, dielectric, and piezoelectric response. Three-dimensional visualization of the dielectric response as a simultaneous function of electric field and temperature revealed the true phase transition of the films, which was found to correspond to the strain state and defect concentration. A lead-buffered anneal process was implemented to enhance the ferroelectric and dielectric response of the films without altering their stoichiometry. It was discovered that PMN- xPT films could be domain-engineered to exhibit a mixed domain state through chemistry and substrate choice. Such films exhibited a monoclinic distortion similar to that of the bulk compositions near the morphotropic phase boundary. Finally, it was revealed that the piezoelectric response could be greatly enhanced by declamping the film from the substrate via a membrane fabrication technique. The membrane structures exhibited enhanced domain wall mobility, suggesting that domain wall motion is crucial for strong piezoelectric performance in PMN-xPT films. The findings can help guide strain- and domain-engineered relaxor ferroelectric thin films tailored for particular applications.

Time scales of foam stability in shallow conduits: Insights from analogue experiments

NASA Astrophysics Data System (ADS)

Spina, L.; Scheu, B.; Cimarelli, C.; Arciniega-Ceballos, A.; Dingwell, D. B.

2016-10-01

Volcanic systems can exhibit periodical trends in degassing activity, characterized by a wide range of time scales. Understanding the dynamics that control such periodic behavior can provide a picture of the processes occurring in the feeding system. Toward this end, we analyzed the periodicity of outgassing in a series of decompression experiments performed on analogue material (argon-saturated silicone oil plus glass beads/fibers) scaled to serve as models of basaltic magma. To define the effects of liquid viscosity and crystal content on the time scale of outgassing, we investigated both: (1) pure liquid systems, at differing viscosities (100 and 1000 Pa s), and (2) particle-bearing suspensions (diluted and semidiluted). The results indicate that under dynamic conditions (e.g., decompressive bubble growth and fluid ascent within the conduit), the periodicity of foam disruption may be up to several orders of magnitude less than estimates based on the analysis of static conditions. This difference in foam disruption time scale is inferred to result from the contribution of bubble shear and bubble growth to inter-bubble film thinning. The presence of particles in the semidiluted regime is further linked to shorter bubble bursting times, likely resulting from contributions of the presence of a solid network and coalescence processes to the relative increase in bubble breakup rates. Finally, it is argued that these experiments represent a good analogue of gas-piston activity (i.e., the periodical rise-and-fall of a basaltic lava lake surface), implying a dominant role for shallow foam accumulation as a source process for these phenomena.

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

2018-05-01

The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

Effects of Nitrogen Fertilization and Thinning Treatments on Subsurface Soil Carbon and Nitrogen

NASA Astrophysics Data System (ADS)

Gross, C. D.; James, J. N.; Harrison, R. B.

2016-12-01

Increases in intensively managed forest plantations have caused concern for the long-term productivity and sustainability of these stands, as decreased organic matter retention and shorter rotations can substantially impact soil nutrition both in the short- and long-term. This study aims to provide data for regional responses of soil carbon (C) and nitrogen (N) by depth to fertilization and thinning treatments. Soil was sampled at an intensively managed Douglas-fir (Pseudotsuga menziesii (Mirb.) Franco) plantation in northwestern Oregon, USA. Nine 0.2-ha plots were sampled with at least three pits per plot. Management regimes included no treatment (control), fertilization (F+), minimal thinning (mT), repeated thinning (rT), and combination treatments (mTF+ and rTF+). Fertilized plots received a total of 1120 kg N ha-1 as urea over 16 years. Bulk density and chemical analysis samples were taken in the middle of succeeding soil layers at depths of 0.1, 0.2, 0.5, 1.0, and 1.5 m. Forest floor samples were collected from a randomly placed quadrat. Preliminary results show an increase in total soil C and N of 113 and 106%, respectively, on the mTF+ plot compared to a control plot. The subsoil, defined here as below 0.2 m, contained over 50% of both soil C and N on the mTF+ plot and experienced greater C and N increases than the surface soil following treatment. This study demonstrates that forest management practices over a relatively short time span (<30 years) can significantly alter subsoil, which comprises a substantial portion of biologically available C and N in terrestrial ecosystems. Subsoil processes are critical to our understanding of changes in soil quality and our ability to accurately assess changes in soil C and N reservoirs.

Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories

NASA Astrophysics Data System (ADS)

Lee, J. W.; Subramaniam, N. G.; Kang, T. W.; Shon, Yoon; Kim, E. K.

2015-05-01

Potassium-doped ZnO thin films electrodeposited on indium tin oxide (ITO) coated glass substrates exhibited ferroelectric behavior with a remnant polarization of 0.2 μC/cm2. Especially, wave forms showing the applied input voltage Vi and output voltage Vo were obtained for Al/ZnO:K/ITO structure. It exhibits a superposition of Vi (input) and Vo (output) signal from Al/ZnO:K/ITO structure with a clear phase shift between the two wave forms which again confirms that the observed ferroelectric hysteresis curve is not related to leaky dielectric materials. The current-voltage characteristics of Al/ZnO:K/ITO structures measured for several cycles revealed bi-stable switching characteristics. The reproducible bi-stable switching characteristics for the mentioned structures had good retention in one particular resistance state. Around one order of switching was realized between low and high resistance states. The switching property thought to be polarization induced originating out from the ferroelectric properties of the potassium doped ZnO thin film. The switching between ZnO:K/ITO interface is assumed to be critical for stability in switching for several cycles. Possible application of this structure in non-volatile memories is explored.

Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

2003-01-01

Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se{sub 2} thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kavalakkatt, J.; Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Nichterwitz, M.

2014-01-07

The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se{sub 2} (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minimamore » with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.« less

Bi2O3 nanoparticles encapsulated in surface mounted metal-organic framework thin films

NASA Astrophysics Data System (ADS)

Guo, Wei; Chen, Zhi; Yang, Chengwu; Neumann, Tobias; Kübel, Christian; Wenzel, Wolfgang; Welle, Alexander; Pfleging, Wilhelm; Shekhah, Osama; Wöll, Christof; Redel, Engelbert

2016-03-01

We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye.We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00532b

Thin films of fullerene-like MoS2 nanoparticles with ultra-low friction and wear

PubMed

Chhowalla; Amaratunga

2000-09-14

The tribological properties of solid lubricants such as graphite and the metal dichalcogenides MX2 (where M is molybdenum or tungsten and X is sulphur or selenium) are of technological interest for reducing wear in circumstances where liquid lubricants are impractical, such as in space technology, ultra-high vacuum or automotive transport. These materials are characterized by weak interatomic interactions (van der Waals forces) between their layered structures, allowing easy, low-strength shearing. Although these materials exhibit excellent friction and wear resistance and extended lifetime in vacuum, their tribological properties remain poor in the presence of humidity or oxygen, thereby limiting their technological applications in the Earth's atmosphere. But using MX2 in the form of isolated inorganic fullerene-like hollow nanoparticles similar to carbon fullerenes and nanotubes can improve its performance. Here we show that thin films of hollow MoS2 nanoparticles, deposited by a localized high-pressure arc discharge method, exhibit ultra-low friction (an order of magnitude lower than for sputtered MoS2 thin films) and wear in nitrogen and 45% humidity. We attribute this 'dry' behaviour in humid environments to the presence of curved S-Mo-S planes that prevent oxidation and preserve the layered structure.

Thin films of fullerene-like MoS2 nanoparticles with ultra-low friction and wear

NASA Astrophysics Data System (ADS)

Chhowalla, Manish; Amaratunga, Gehan A. J.

2000-09-01

The tribological properties of solid lubricants such as graphite and the metal dichalcogenides MX2 (where M is molybdenum or tungsten and X is sulphur or selenium) are of technological interest for reducing wear in circumstances where liquid lubricants are impractical, such as in space technology, ultra-high vacuum or automotive transport. These materials are characterized by weak interatomic interactions (van der Waals forces) between their layered structures, allowing easy, low-strength shearing. Although these materials exhibit excellent friction and wear resistance and extended lifetime in vacuum, their tribological properties remain poor in the presence of humidity or oxygen, thereby limiting their technological applications in the Earth's atmosphere. But using MX2 in the form of isolated inorganic fullerene-like hollow nanoparticles similar to carbon fullerenes and nanotubes can improve its performance. Here we show that thin films of hollow MoS2 nanoparticles, deposited by a localized high-pressure arc discharge method, exhibit ultra-low friction (an order of magnitude lower than for sputtered MoS2 thin films) and wear in nitrogen and 45% humidity. We attribute this `dry' behaviour in humid environments to the presence of curved S-Mo-S planes that prevent oxidation and preserve the layered structure.

Synthesis and Characterization of Methylammonium Lead Iodide Perovskite and its Application in Planar Hetero-junction Devices

NASA Astrophysics Data System (ADS)

Upadhyaya, Aditi; Mohan Singh Negi, Chandra; Yadav, Anjali; Gupta, Saral K.; Singh Verma, Ajay

2018-06-01

The present paper reports on the synthesis and characterization of methylammonium lead iodide perovskite thin film and its applications in heterojunction devices. Perovskite thin films were deposited by a simple spin-coating method using a precursor solution including methyl ammonium iodide and lead iodide onto a glass substrate. The surface morphology study via field emission scanning electron microscopy of the perovskite thin film shows complete surface coverage on glass substrate with negligible pin-holes. UV–visible spectroscopy study revealed a broad absorption range and the exhibition of a band-gap of 1.6 eV. The dark current-voltage (I–V) characteristics of all the devices under study show rectifying behaviour similar to the Schottky diode. Various device parameters such as ideality factor and barrier height are extracted from the I–V curve. At low voltages the devices exhibit Ohmic behaviour, trap free space charge limited conduction governs the charge transport at an intermediate voltage range, while at much higher voltages the devices show trap controlled space charge limited conduction. Furthermore, impedance spectroscopy measurements enable us to extract the various internal parameters of the devices. Correlations between these parameters and I–V characteristics are discussed. The different capacitive process arising in the devices was discussed using the capacitance versus frequency curve.

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

PubMed

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

Method of manufacturing a shapeable short-resistant capacitor

DOEpatents

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2013-04-02

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film.

PubMed

Tetsuyama, Norihiro; Fusazaki, Koshi; Mizokami, Yasuaki; Shimogaki, Tetsuya; Higashihata, Mitsuhiro; Nakamura, Daisuke; Okada, Tatsuo

2014-04-21

We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.