V-shaped resonators for addition of broad-area laser diode arrays

DOEpatents

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

PubMed

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Evaluation of Intrinsic Charge Carrier Transport at Insulator-Semiconductor Interfaces Probed by a Non-Contact Microwave-Based Technique

PubMed Central

Honsho, Yoshihito; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Seki, Shu

2013-01-01

We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge carriers was clearly probed through the applied external microwave field, also giving the quantitative responses to the injected charge carrier density and charge/discharge characteristics. By means of the present measurement system named field-induced time-resolved microwave conductivity (FI-TRMC), the pentacene thin film in the MIS device allowed the evaluation of the hole and electron mobility at the insulator-semiconductor interface of 6.3 and 0.34 cm2 V−1 s−1, respectively. This is the first report on the direct, intrinsic, non-contact measurement of charge carrier mobility at interfaces that has been fully experimentally verified. PMID:24212382

Delay induced high order locking effects in semiconductor lasers

NASA Astrophysics Data System (ADS)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Delay induced high order locking effects in semiconductor lasers.

PubMed

Kelleher, B; Wishon, M J; Locquet, A; Goulding, D; Tykalewicz, B; Huyet, G; Viktorov, E A

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types--a quantum dot based device and a quantum well based device-are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Photonic Arbitrary Waveform Generation Technology

DTIC Science & Technology

2006-06-01

locked external- cavity semiconductor diode ring laser “, Optics Letters, Vol. 27, No. 9 , 719-721, (2002). [22] S. Gee, F. Quinlan, S. Ozharar... optical pulses that one is accustomed to. Modelocked semiconductor lasers are used to generate a set of phase locked optical frequencies on a periodic...The corresponding optical spectrum of the laser consists of a comb of periodically spaced, phase - locked

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

NASA Technical Reports Server (NTRS)

Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael

2014-01-01

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

Coherence switching of a vertical-cavity semiconductor-laser for multimode biomedical imaging (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cao, Hui; Knitter, Sebastian; Liu, Changgeng; Redding, Brandon; Khokha, Mustafa Kezar; Choma, Michael Andrew

2017-02-01

Speckle formation is a limiting factor when using coherent sources for imaging and sensing, but can provide useful information about the motion of an object. Illumination sources with tunable spatial coherence are therefore desirable as they can offer both speckled and speckle-free images. Efficient methods of coherence switching have been achieved with a solid-state degenerate laser, and here we demonstrate a semiconductor-based degenerate laser system that can be switched between a large number of mutually incoherent spatial modes and few-mode operation. Our system is designed around a semiconductor gain element, and overcomes barriers presented by previous low spatial coherence lasers. The gain medium is an electrically-pumped vertical external cavity surface emitting laser (VECSEL) with a large active area. The use of a degenerate external cavity enables either distributing the laser emission over a large ( 1000) number of mutually incoherent spatial modes or concentrating emission to few modes by using a pinhole in the Fourier plane of the self-imaging cavity. To demonstrate the unique potential of spatial coherence switching for multimodal biomedical imaging, we use both low and high spatial coherence light generated by our VECSEL-based degenerate laser for imaging embryo heart function in Xenopus, an important animal model of heart disease. The low-coherence illumination is used for high-speed (100 frames per second) speckle-free imaging of dynamic heart structure, while the high-coherence emission is used for laser speckle contrast imaging of the blood flow.

Ring-resonator-integrated tunable external cavity laser employing EAM and SOA.

PubMed

Yoon, Ki-Hong; Kwon, O-Kyun; Kim, Ki Soo; Choi, Byung-Seok; Oh, Su Hwan; Kim, Hyun Su; Sim, Jae-Sik; Kim, Chul Soo

2011-12-05

We propose and demonstrate a tunable external cavity laser (ECL) composed of a polymer Bragg reflector (PBR) and integrated gain chip with gain, a ring resonator, an electro-absorption modulator (EAM), and a semiconductor optical amplifier (SOA). The cavity of the laser is composed of the PBR, gain, and ring resonator. The ring resonator reflects the predetermined wavelengths into the gain region and transmits the output signal into integrated devices such as the EAM and SOA. The output wavelength of the tunable laser is discretely tuned in steps of about 0.8 nm through the thermal-optic effect of the PBR and predetermined mode spacing of the ring resonator.

Crisis route to chaos in semiconductor lasers subjected to external optical feedback

NASA Astrophysics Data System (ADS)

Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

2018-03-01

Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

NASA Technical Reports Server (NTRS)

Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan B.; Krainak, Michael A.

2014-01-01

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064-nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Especially, using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to104 at 10 mHz. The PW-ECLs compactness and low cost make it a candidate to replace traditional Nd:YAGnon-planar ring oscillators and fiber lasers in applications which require a single longitudinal-mode.

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities.

PubMed

Zhu, X; Cassidy, D T

1996-08-20

A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

Analysis of originating ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor heterolasers with an external fiber cavity

NASA Astrophysics Data System (ADS)

Shcherbakov, Alexandre S.; Campos Acosta, Joaquin; Pons Aglio, Alicia; Moreno Zarate, Pedro; Mansurova, Svetlana

2010-06-01

We present an advanced approach to describing low-power trains of bright picosecond optical dissipative solitary pulses with an internal frequency modulation in practically important case of exploiting semiconductor heterolaser operating in near-infrared range in the active mode-locking regime. In the chosen schematic arrangement, process of the active mode-locking is caused by a hybrid nonlinear cavity consisting of this heterolaser and an external rather long single-mode optical fiber exhibiting square-law dispersion, cubic Kerr nonlinearity, and small linear optical losses. Our analysis of shaping dissipative solitary pulses includes three principal contributions associated with the modulated gain, total optical losses, as well as with linear and nonlinear phase shifts. In fact, various trains of the non-interacting to one another optical dissipative solitons appear within simultaneous balance between the second-order dispersion and cubic-law Kerr nonlinearity as well as between active medium gain and linear optical losses in a hybrid cavity. Our specific approach makes possible taking the modulating signals providing non-conventional composite regimes of a multi-pulse active mode-locking. Within our model, a contribution of the appearing nonlinear Ginzburg-Landau operator to the parameters of dissipative solitary pulses is described via exploiting an approximate variational procedure involving the technique of trial functions.

Qualitative analysis of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor heterolasers with an external fiber cavity

NASA Astrophysics Data System (ADS)

Shcherbakov, Alexandre S.; Campos Acosta, Joaquin; Moreno Zarate, Pedro; Pons Aglio, Alicia

2011-02-01

An advanced qualitative characterization of simultaneously existing various low-power trains of ultra-short optical pulses with an internal frequency modulation in a distributed laser system based on semiconductor heterostructure is presented. The scheme represents a hybrid cavity consisting of a single-mode heterolaser operating in the active mode-locking regime and an external long single-mode optical fiber exhibiting square-law dispersion, cubic Kerr nonlinearity, and linear optical losses. In fact, we consider the trains of optical dissipative solitons, which appear within double balance between the second-order dispersion and cubic-law nonlinearity as well as between the active-medium gain and linear optical losses in a hybrid cavity. Moreover, we operate on specially designed modulating signals providing non-conventional composite regimes of simultaneous multi-pulse active mode-locking. As a result, the mode-locking process allows shaping regular trains of picosecond optical pulses excited by multi-pulse independent on each other sequences of periodic modulations. In so doing, we consider the arranged hybrid cavity as a combination of a quasi-linear part responsible for the active mode-locking by itself and a nonlinear part determining the regime of dissipative soliton propagation. Initially, these parts are analyzed individually, and then the primarily obtained data are coordinated with each other. Within this approach, a contribution of the appeared cubically nonlinear Ginzburg-Landau operator is analyzed via exploiting an approximate variational procedure involving the technique of trial functions.

CW injection locking for long-term stability of frequency combs

NASA Astrophysics Data System (ADS)

Williams, Charles; Quinlan, Franklyn; Delfyett, Peter J.

2009-05-01

Harmonically mode-locked semiconductor lasers with external ring cavities offer high repetition rate pulse trains while maintaining low optical linewidth via long cavity storage times. Continuous wave (CW) injection locking further reduces linewidth and stabilizes the optical frequencies. The output can be stabilized long-term with the help of a modified Pound-Drever-Hall feedback loop. Optical sidemode suppression of 36 dB has been shown, as well as RF supermode noise suppression of 14 dB for longer than 1 hour. In addition to the injection locking of harmonically mode-locked lasers requiring an external frequency source, recent work shows the viability of the injection locking technique for regeneratively mode-locked lasers, or Coupled Opto-Electronic Oscillators (COEO).

Carbon nanotube mode-locked vertical external-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Seger, K.; Meiser, N.; Choi, S. Y.; Jung, B. H.; Yeom, D.-I.; Rotermund, F.; Okhotnikov, O.; Laurell, F.; Pasiskevicius, V.

2014-03-01

Mode-locking an optically pumped semiconductor disk laser has been demonstrated using low-loss saturable absorption containing a mixture of single-walled carbon nanotubes in PMM polymer. The modulator was fabricated by a simple spin-coating technique on fused silica substrate and was operating in transmission. Stable passive fundamental modelocking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm.

Actively mode-locked diode laser with a mode spacing stability of ∼6 × 10{sup -14}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakharyash, V F; Kashirsky, A V; Klementyev, V M

We have studied mode spacing stability in an actively mode-locked external-cavity semiconductor laser. It has been shown that, in the case of mode spacing pulling to the frequency of a highly stable external microwave signal produced by a hydrogen standard (stability of 4 × 10{sup -14} over an averaging period τ = 10 s), this configuration ensures a mode spacing stability of 5.92 × 10{sup -14} (τ = 10 s). (control of radiation parameters)

Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

NASA Astrophysics Data System (ADS)

Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

2016-05-01

It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Transient behavior of an actively mode-locked semiconductor laser diode

NASA Technical Reports Server (NTRS)

Auyeung, J. C.; Bergman, L. A.; Johnston, A. R.

1982-01-01

Experimental investigation was carried out to study the transient regimes during the buildup and decay of the active mode-locked state in a laser diode. The mode locking was achieved through a sinusoidal modulation of the diode current with the laser in an external cavity. The pulse shape evolution and the time constants for the buildup and decay were determined.

Dynamics of shaping ultrashort optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external long-haul single-mode fiber cavity

NASA Astrophysics Data System (ADS)

Shcherbakov, Alexandre S.; Moreno Zarate, Pedro

2010-02-01

We describe the conditions of shaping regular trains of optical dissipative solitary pulses, excited by multi-pulse sequences of periodic modulating signals, in the actively mode-locked semiconductor laser heterostructure with an external long-haul single-mode silicon fiber exhibiting square-law dispersion, cubic Kerr nonlinearity, and linear optical losses. The presented model for the analysis includes three principal contributions associated with the modulated gain, optical losses, as well as linear and nonlinear phase shifts. In fact, the trains of optical dissipative solitary pulses appear within simultaneous presenting and a balance of mutually compensating interactions between the second-order dispersion and cubic-law Kerr nonlinearity as well as between active medium gain and linear optical losses in the combined cavity. Within such a model, a contribution of the nonlinear Ginzburg-Landau operator to shaping the parameters of optical dissipative solitary pulses is described via exploiting an approximate variational procedure involving the technique of trial functions. Finally, the results of the illustrating proof-of-principle experiments are briefly presented and discussed in terms of optical dissipative solitary pulses.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Minimal-post-processing 320-Gbps true random bit generation using physical white chaos.

PubMed

Wang, Anbang; Wang, Longsheng; Li, Pu; Wang, Yuncai

2017-02-20

Chaotic external-cavity semiconductor laser (ECL) is a promising entropy source for generation of high-speed physical random bits or digital keys. The rate and randomness is unfortunately limited by laser relaxation oscillation and external-cavity resonance, and is usually improved by complicated post processing. Here, we propose using a physical broadband white chaos generated by optical heterodyning of two ECLs as entropy source to construct high-speed random bit generation (RBG) with minimal post processing. The optical heterodyne chaos not only has a white spectrum without signature of relaxation oscillation and external-cavity resonance but also has a symmetric amplitude distribution. Thus, after quantization with a multi-bit analog-digital-convertor (ADC), random bits can be obtained by extracting several least significant bits (LSBs) without any other processing. In experiments, a white chaos with a 3-dB bandwidth of 16.7 GHz is generated. Its entropy rate is estimated as 16 Gbps by single-bit quantization which means a spectrum efficiency of 96%. With quantization using an 8-bit ADC, 320-Gbps physical RBG is achieved by directly extracting 4 LSBs at 80-GHz sampling rate.

Tunable ring laser with internal injection seeding and an optically-driven photonic crystal reflector.

PubMed

Zheng, Jie; Ge, Chun; Wagner, Clark J; Lu, Meng; Cunningham, Brian T; Hewitt, J Darby; Eden, J Gary

2012-06-18

Continuous tuning over a 1.6 THz region in the near-infrared (842.5-848.6 nm) has been achieved with a hybrid ring/external cavity laser having a single, optically-driven grating reflector and gain provided by an injection-seeded semiconductor amplifier. Driven at 532 nm and incorporating a photonic crystal with an azobenzene overlayer, the reflector has a peak reflectivity of ~80% and tunes at the rate of 0.024 nm per mW of incident green power. In a departure from conventional ring or external cavity lasers, the frequency selectivity for this system is provided by the passband of the tunable photonic crystal reflector and line narrowing in a high gain amplifier. Sub - 0.1 nm linewidths and amplifier extraction efficiencies above 97% are observed with the reflector tuned to 842.5 nm.

High-frequency chaotic dynamics enabled by optical phase-conjugation

PubMed Central

Mercier, Émeric; Wolfersberger, Delphine; Sciamanna, Marc

2016-01-01

Wideband chaos is of interest for applications such as random number generation or encrypted communications, which typically use optical feedback in a semiconductor laser. Here, we show that replacing conventional optical feedback with phase-conjugate feedback improves the chaos bandwidth. In the range of achievable phase-conjugate mirror reflectivities, the bandwidth increase reaches 27% when compared with feedback from a conventional mirror. Experimental measurements of the time-resolved frequency dynamics on nanosecond time-scales show that the bandwidth enhancement is related to the onset of self-pulsing solutions at harmonics of the external-cavity frequency. In the observed regime, the system follows a chaotic itinerancy among these destabilized high-frequency external-cavity modes. The recorded features are unique to phase-conjugate feedback and distinguish it from the long-standing problem of time-delayed feedback dynamics. PMID:26739806

Characterizing the parameters of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external fiber cavity

NASA Astrophysics Data System (ADS)

Shcherbakov, Alexandre S.; Campos Acosta, Joaquin; Moreno Zarate, Pedro; Mansurova, Svetlana; Il'in, Yurij V.; Tarasov, Il'ya S.

2010-06-01

We discuss specifically elaborated approach for characterizing the train-average parameters of low-power picosecond optical pulses with the frequency chirp, arranged in high-repetition-frequency trains, in both time and frequency domains. This approach had been previously applied to rather important case of pulse generation when a single-mode semiconductor heterolaser operates in a multi-pulse regime of the active mode-locking with an external single-mode fiber cavity. In fact, the trains of optical dissipative solitary pulses, which appear under a double balance between mutually compensating actions of dispersion and nonlinearity as well as gain and optical losses, are under characterization. However, in the contrast with the previous studies, now we touch an opportunity of describing two chirped optical pulses together. The main reason of involving just a pair of pulses is caused by the simplest opportunity for simulating the properties of just a sequence of pulses rather then an isolated pulse. However, this step leads to a set of specific difficulty inherent generally in applying joint time-frequency distributions to groups of signals and consisting in manifestation of various false signals or artefacts. This is why the joint Chio-Williams time-frequency distribution and the technique of smoothing are under preliminary consideration here.

Generation of flat wideband chaos with suppressed time delay signature by using optical time lens.

PubMed

Jiang, Ning; Wang, Chao; Xue, Chenpeng; Li, Guilan; Lin, Shuqing; Qiu, Kun

2017-06-26

We propose a flat wideband chaos generation scheme that shows excellent time delay signature suppression effect, by injecting the chaotic output of general external cavity semiconductor laser into an optical time lens module composed of a phase modulator and two dispersive units. The numerical results demonstrate that by properly setting the parameters of the driving signal of phase modulator and the accumulated dispersion of dispersive units, the relaxation oscillation in chaos can be eliminated, wideband chaos generation with an efficient bandwidth up to several tens of GHz can be achieved, and the RF spectrum of generated chaotic signal is nearly as flat as uniform distribution. Moreover, the periodicity of chaos induced by the external cavity modes can be simultaneously destructed by the optical time lens module, based on this the time delay signature can be completely suppressed.

Performance of Planar-Waveguide External Cavity Laser for Precision Measurements

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan; Krainak, Michael A.; Stolpner, Lew

2010-01-01

A 1542-nm planar-waveguide external cavity laser (PW-ECL) is shown to have a sufficiently low level of frequency and intensity noise to be suitable for precision measurement applications. The frequency noise and intensity noise of the PW-ECL was comparable or better than the nonplanar ring oscillator (NPRO) and fiber laser between 0.1 mHz to 100 kHz. Controllability of the PW-ECL was demonstrated by stabilizing its frequency to acetylene (13C2H2) at 10(exp -13) level of Allan deviation. The PW-ECL also has the advantage of the compactness of a standard butterfly package, low cost, and a simple design consisting of a semiconductor gain media coupled to a planar-waveguide Bragg reflector. These features would make the PW-ECL suitable for precision measurements, including compact optical frequency standards, space lidar, and space interferometry

Modeling of ultrashort pulse generation in mode-locked VECSELs

NASA Astrophysics Data System (ADS)

Kilen, I.; Koch, S. W.; Hader, J.; Moloney, J. V.

2016-03-01

We present a study of various models for the mode-locked pulse dynamics in a vertical external-cavity surface emitting laser with a saturable absorber. The semiconductor Bloch equations are used to model microscopically the light-matter interaction and the carrier dynamics. Maxwell's equations describe the pulse propagation. Scattering contributions due to higher order correlation effects are approximated using effective rates that are found from a comparison to solving the microscopic scattering equations on the second Born-Markov level. It is shown that the simulations result in the same mode-locked final state whether the system is initialized with a test pulse close to the final mode-locked pulse or the full field build-up from statistical noise is considered. The influence of the cavity design is studied. The longest pulses are found for a standard V-cavity while a linear cavity and a V-cavity with an high reflectivity mirror in the middle are shown to produce similar, much shorter pulses.

A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C. Y., E-mail: cychang@gatech.edu; UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz; Choi, Daeyoung

2016-05-09

A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

A semiconductor nanowire Josephson junction microwave laser

NASA Astrophysics Data System (ADS)

Cassidy, Maja; Uilhoorn, Willemijn; Kroll, James; de Jong, Damaz; van Woerkom, David; Nygard, Jesper; Krogstrup, Peter; Kouwenhoven, Leo

We present measurements of microwave lasing from a single Al/InAs/Al nanowire Josephson junction strongly coupled to a high quality factor superconducting cavity. Application of a DC bias voltage to the Josephson junction results in photon emission into the cavity when the bias voltage is equal to a multiple of the cavity frequency. At large voltage biases, the strong non-linearity of the circuit allows for efficient down conversion of high frequency microwave photons down to multiple photons at the fundamental frequency of the cavity. In this regime, the emission linewidth narrows significantly below the bare cavity linewidth to < 10 kHz and real time analysis of the emission statistics shows above threshold lasing with a power conversion efficiency > 50%. The junction-cavity coupling and laser emission can be tuned rapidly via an external gate, making it suitable to be integrated into a scalable qubit architecture as a versatile source of coherent microwave radiation. This work has been supported by the Netherlands Organisation for Scientific Research (NWO/OCW), Foundation for Fundamental Research on Matter (FOM), European Research Council (ERC), and Microsoft Corporation Station Q.

Optical cavity furnace for semiconductor wafer processing

DOEpatents

Sopori, Bhushan L.

2014-08-05

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Electrically-detected magnetic resonance in semiconductor nanostructures inserted in microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii

2013-12-04

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance caused by the microcavities embedded in the Si-QW plane.

Dual-pumped nondegenerate four-wave mixing in semiconductor laser with a built-in external cavity

NASA Astrophysics Data System (ADS)

Wu, Jian-Wei; Qiu, Qi; Hyub Won, Yong

2017-04-01

In this paper, a semiconductor laser system consisting of a conventional multimode Fabry-Pérot laser diode with a built-in external cavity is presented and demonstrated. More than two resonance modes, whose peak levels are significantly higher than other residual modes, are simultaneously supported and output by adjusting the bias current and operating temperature of the active region. Based on this device, dual-pumped nondegenerate four-wave mixing—in which two pump waves and a single signal wave are simultaneously fed into the laser, and the injection power and wavelength of the injected pump and signal waves are changed—is observed and discussed thoroughly. The results show that while the wavelengths of pump wave A and signal wave S are kept constant, the other pump wave B jumps from about 1535 nm to 1578 nm, generating conversion signals with changed wavelengths. The achieved conversion bandwidth between the primary signal and the converted signal waves is broadly tunable in the range of several terahertz frequencies. Both the conversion efficiency and optical signal-to-noise ratio of the newly generated conversion signals are adopted to evaluate the performance of the proposed four-wave mixing process, and are strongly dependent on the wavelength and power of the injected waves. Here, the attained maximum conversion efficiency and optical signal-to-noise ratio are close to -22 dB and 15 dB, respectively.

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

NASA Astrophysics Data System (ADS)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

PubMed

Guan, Hang; Novack, Ari; Galfsky, Tal; Ma, Yangjin; Fathololoumi, Saeed; Horth, Alexandre; Huynh, Tam N; Roman, Jose; Shi, Ruizhi; Caverley, Michael; Liu, Yang; Baehr-Jones, Thomas; Bergman, Keren; Hochberg, Michael

2018-04-02

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si 3 N 4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin

2011-09-01

Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth:more » (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.« less

High frequency optoelectronic oscillators based on the optical feedback of semiconductor mode-locked laser diodes.

PubMed

Haji, Mohsin; Hou, Lianping; Kelly, Anthony E; Akbar, Jehan; Marsh, John H; Arnold, John M; Ironside, Charles N

2012-01-30

Optical self seeding feedback techniques can be used to improve the noise characteristics of passively mode-locked laser diodes. External cavities such as fiber optic cables can increase the memory of the phase and subsequently improve the timing jitter. In this work, an improved optical feedback architecture is proposed using an optical fiber loop delay as a cavity extension of the mode-locked laser. We investigate the effect of the noise reduction as a function of the loop length and feedback power. The well known composite cavity technique is also implemented for suppressing supermode noise artifacts presented due to harmonic mode locking effects. Using this method, we achieve a record low radio frequency linewidth of 192 Hz for any high frequency (>1 GHz) passively mode-locked laser to date (to the best of the authors' knowledge), making it promising for the development of high frequency optoelectronic oscillators.

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Iliadis, Agisilaos A.; Christou, Aristos

2003-07-01

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity

DTIC Science & Technology

1992-10-01

laser light is considered planar. In actuality, the HLP 1400 laser diode used in this experiment has a gaussian profile. This approximation is frequently...return beam is in phase with either the light transmitted through or reflected off the rear facet of the diode laser. In Fig. 3.2, E, is the light ...In the first case an anti-reflection coated laser diode was used. It emitted a broadband spectrum without the feedback. The PCM just lowered the

Development of a US Gravitational Wave Laser System for LISA

NASA Technical Reports Server (NTRS)

Camp, Jordan B.; Numata, Kenji

2015-01-01

A highly stable and robust laser system is a key component of the space-based LISA mission architecture.In this talk I will describe our plans to demonstrate a TRL 5 LISA laser system at Goddard Space Flight Center by 2016.The laser system includes a low-noise oscillator followed by a power amplifier. The oscillator is a low-mass, compact 10mW External Cavity Laser, consisting of a semiconductor laser coupled to an optical cavity, built by the laser vendorRedfern Integrated Optics. The amplifier is a diode-pumped Yb fiber with 2W output, built at Goddard. I will show noiseand reliability data for the full laser system, and describe our plans to reach TRL 5 by 2016.

Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

NASA Astrophysics Data System (ADS)

Lukowski, Michal L.

Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I second harmonic generation in a V- cavity is presented. Tens of watts of output power for both blue and green wavelengths prove the viability for VECSELs to replace the other types of lasers currently used for applications in laser light shows, for Ti:Sapphire pumping, and for medical applications such as laser skin resurfacing. The novel, recently patented, two-chip T-cavity configuration allowing for spatial overlap of two, separate VECSEL cavities is described in detail. This type of setup is further used to demonstrate type II sum frequency generation to green with multi-watt output, and the full potential of the T-cavity is utilized by achieving type II difference frequency generation to the mid-IR spectral region. The tunable output around 5.4 microm with over 10 mW power is showcased. In the same manner the first attempts to generate THz radiation are discussed. Finally, a slightly modified T-cavity VECSEL is used to reach the UV spectral regions thanks to type I fourth harmonic generation. Over 100 mW at around 265 nm is obtained in a setup which utilizes no stabilization techniques. The dissertation demonstrates the flexibility of the VECSEL in achieving broad spectral coverage and thus its potential for a wide range of applications.

Construction of an Extended Cavity Tunable Diode Laser

NASA Astrophysics Data System (ADS)

Deveney, Edward; Metcalf, Harold; Noe, John

2001-03-01

A diverse and vast amount of experiments at the forefront of experimental physics typically use diode lasers as an integral part of their arrangement. However, researchers who use unmodified commercially available diode lasers run into several complications. The laser diode that is purchased is often not of the same wavelength as is advertised; thus the researcher’s desired wavelength is not met. Because the semiconductor has such a short external cavity, it is very sensitive to the injection current, changes in room temperature, and has a large linewidth making it harder to tune. To obtain a finely tuned diode laser, temperature and current controlling of the diode laser are used in conjunction with an extended semiconductor cavity. This is achieved by mounting the hermetically sealed assembly atop a thermoelectric cooler, which uses the Peltier effect. Furthermore, the variation of the injection current may be used as an additional control for the wavelength output of the diode. The power range of 70 mW as controlled by the injection current adjusts the wavelength by a span of only 4 nanometers. The extended cavity consists of a diffraction grating adhered to a mirror mount and is used for grating feedback. That in turn is used to reduce the linewidth sufficiently enough in order to provide much better tunability. In the next three weeks, the tunable diode laser will be specifically applied to research in the areas of Second Harmonic Generation in a PPLN Crystal and Saturated Rubidium Spectroscopy. This study was supported in part by NSF grant PHY99-12312.

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.

2015-02-16

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injectedmore » photons.« less

Design of hybrid laser structures with QD-RSOA and silicon photonic mirrors

NASA Astrophysics Data System (ADS)

Gioannini, Mariangela; Benedetti, Alessio; Bardella, Paolo; Bovington, Jock; Traverso, Matt; Siriani, Dominic; Gothoskar, Prakash

2018-02-01

We compare the design of three different single mode laser structures consisting in a Reflective Semiconductor Optical Amplifier coupled to a silicon photonic external cavity mirror. The three designs differ for the mirror structure and are compared in terms of SOA power consumption and side mode suppression ratio (SMSR). Assuming then a Quantum Dot active material, we simulate the best laser design using a numerical model that includes the peculiar physical characteristics of the QD gain medium. The simulated QD laser CW characteristics are shown and discussed.

Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

NASA Astrophysics Data System (ADS)

Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

2012-12-01

We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

NASA Astrophysics Data System (ADS)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Resonator modes and mode dynamics for an external cavity-coupled laser array

NASA Astrophysics Data System (ADS)

Nair, Niketh; Bochove, Erik J.; Aceves, Alejandro B.; Zunoubi, Mohammad R.; Braiman, Yehuda

2015-03-01

Employing a Fox-Li approach, we derived the cold-cavity mode structure and a coupled mode theory for a phased array of N single-transverse-mode active waveguides with feedback from an external cavity. We applied the analysis to a system with arbitrary laser lengths, external cavity design and coupling strengths to the external cavity. The entire system was treated as a single resonator. The effect of the external cavity was modeled by a set of boundary conditions expressed by an N-by-N frequency-dependent matrix relation between incident and reflected fields at the interface with the external cavity. The coupled mode theory can be adapted to various types of gain media and internal and external cavity designs.

Monolayer semiconductor nanocavity lasers with ultralow thresholds.

PubMed

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

2015-04-02

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Monolayer semiconductor nanocavity lasers with ultralow thresholds

NASA Astrophysics Data System (ADS)

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

2015-04-01

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D A; Pikhtin, N A; Lyutetskiy, A V

2015-07-31

We report an experimental study of power characteristics of semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide as functions of cavity length, stripe contact width and mirror reflectivities. It is shown that at high current pump levels, the variation of the cavity parameters of a semiconductor laser (width, length and mirror reflectivities) influences the light – current (L – I) characteristic saturation and maximum optical power by affecting such laser characteristics, as the current density and the optical output loss. A model is elaborated and an optical power of semiconductor lasers is calculated by taking intomore » account the dependence of the internal optical loss on pump current density and concentration distribution of charge carriers and photons along the cavity axis of the cavity. It is found that only introduction of the dependence of the internal optical loss on pump current density to the calculation model provides a good agreement between experimental and calculated L – I characteristics for all scenarios of variations in the laser cavity parameters. (lasers)« less

Method and apparatus for thermal processing of semiconductor substrates

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Mattson, Brad S.; Savas, Stephen E.

2002-01-01

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Method and apparatus for thermal processing of semiconductor substrates

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Mattson, Brad S.; Savas, Stephen E.

2000-01-01

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Generation of wideband chaos with suppressed time-delay signature by delayed self-interference.

PubMed

Wang, Anbang; Yang, Yibiao; Wang, Bingjie; Zhang, Beibei; Li, Lei; Wang, Yuncai

2013-04-08

We demonstrate experimentally and numerically a method using the incoherent delayed self-interference (DSI) of chaotic light from a semiconductor laser with optical feedback to generate wideband chaotic signal. The results show that, the DSI can eliminate the domination of laser relaxation oscillation existing in the chaotic laser light and therefore flatten and widen the power spectrum. Furthermore, the DSI depresses the time-delay signature induced by external cavity modes and improves the symmetry of probability distribution by more than one magnitude. We also experimentally show that this DSI signal is beneficial to the random number generation.

Solid-state lasers for coherent communication and remote sensing

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1991-01-01

Work in the stabilization of monolithic Nd:YAG lasers and the application of these lasers to nonlinear optical frequency conversion is discussed. The intrinsic stability of semiconductor diode laser pumped solid state lasers has facilitated a number of demonstration in external resonant cavity harmonic generation and stable optical parametric oscillation. Relative laser frequency stabilization of 0.3 Hz was achieved, and absolute stability of a few hundred hertz is anticipated. The challenge is now to reproduce this frequency stability in the output of tunable nonlinear optical devices. Theoretical and experimental work toward this goal are continuing.

Method for photolithographic definition of recessed features on a semiconductor wafer utilizing auto-focusing alignment

DOEpatents

Farino, A.J.; Montague, S.; Sniegowski, J.J.; Smith, J.H.; McWhorter, P.J.

1998-07-21

A method is disclosed for photolithographically defining device features up to the resolution limit of an auto-focusing projection stepper when the device features are to be formed in a wafer cavity at a depth exceeding the depth of focus of the stepper. The method uses a focusing cavity located in a die field at the position of a focusing light beam from the auto-focusing projection stepper, with the focusing cavity being of the same depth as one or more adjacent cavities wherein a semiconductor device is to be formed. The focusing cavity provides a bottom surface for referencing the focusing light beam and focusing the stepper at a predetermined depth below the surface of the wafer, whereat the device features are to be defined. As material layers are deposited in each device cavity to build up a semiconductor structure such as a microelectromechanical system (MEMS) device, the same material layers are deposited in the focusing cavity, raising the bottom surface and re-focusing the stepper for accurately defining additional device features in each succeeding material layer. The method is especially applicable for forming MEMS devices within a cavity or trench and integrating the MEMS devices with electronic circuitry fabricated on the wafer surface. 15 figs.

Method for photolithographic definition of recessed features on a semiconductor wafer utilizing auto-focusing alignment

DOEpatents

Farino, Anthony J.; Montague, Stephen; Sniegowski, Jeffry J.; Smith, James H.; McWhorter, Paul J.

1998-01-01

A method is disclosed for photolithographically defining device features up to the resolution limit of an auto-focusing projection stepper when the device features are to be formed in a wafer cavity at a depth exceeding the depth of focus of the stepper. The method uses a focusing cavity located in a die field at the position of a focusing light beam from the auto-focusing projection stepper, with the focusing cavity being of the same depth as one or more adjacent cavities wherein a semiconductor device is to be formed. The focusing cavity provides a bottom surface for referencing the focusing light beam and focusing the stepper at a predetermined depth below the surface of the wafer, whereat the device features are to be defined. As material layers are deposited in each device cavity to build up a semiconductor structure such as a microelectromechanical system (MEMS) device, the same material layers are deposited in the focusing cavity, raising the bottom surface and re-focusing the stepper for accurately defining additional device features in each succeeding material layer. The method is especially applicable for forming MEMS devices within a cavity or trench and integrating the MEMS devices with electronic circuitry fabricated on the wafer surface.

Phase locking of a semiconductor double-quantum-dot single-atom maser

NASA Astrophysics Data System (ADS)

Liu, Y.-Y.; Hartke, T. R.; Stehlik, J.; Petta, J. R.

2017-11-01

We experimentally study the phase stabilization of a semiconductor double-quantum-dot (DQD) single-atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise L =-99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ≈8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.

Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

NASA Astrophysics Data System (ADS)

Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

2001-10-01

Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Tunable high-power blue external cavity semiconductor laser

NASA Astrophysics Data System (ADS)

Ding, Ding; Lv, Xueqin; Chen, Xinyi; Wang, Fei; Zhang, Jiangyong; Che, Kaijun

2017-09-01

A commercially available high-power GaN-based blue laser diode has been operated in a simple Littrow-type external cavity (EC). Two kinds of EC configurations with the grating lines perpendicular (A configuration) and parallel (B configuration) to the p-n junction are evaluated. Good performance has been demonstrated for the EC laser with B configuration due to the better mode selection effect induced by the narrow feedback wavelength range from the grating. Under an injection current of 1100 mA, the spectral linewidth is narrowed significantly down to ∼0.1 nm from ∼1 nm (the free-running width), with a good wavelength-locking behavior and a higher than 35 dB-amplified spontaneous emission suppression ratio. Moreover, a tuning bandwidth of 3.6 nm from 443.9 nm to 447.5 nm is realized with output power of 1.24 W and EC coupling efficiency of 80% at the central wavelength. The grating-coupled blue EC laser with narrow spectral linewidth, flexible wavelength tunability, and high output power shows potential applications in atom cooling and trapping, high-resolution spectroscopy, second harmonic generation, and high-capacity holographic data storage.

Non-equilibrium many-body influence on mode-locked Vertical External-cavity Surface-emitting Lasers

NASA Astrophysics Data System (ADS)

Kilen, Isak Ragnvald

Vertical external-cavity surface-emitting lasers are ideal testbeds for studying the influence of the non-equilibrium many-body dynamics on mode locking. As we will show in this thesis, ultra short pulse generation involves a marked departure from Fermi carrier distributions assumed in prior theoretical studies. A quantitative model of the mode locking dynamics is presented, where the semiconductor Bloch equations with Maxwell's equation are coupled, in order to study the influences of quantum well carrier scattering on mode locking dynamics. This is the first work where the full model is solved without adiabatically eliminating the microscopic polarizations. In many instances we find that higher order correlation contributions (e.g. polarization dephasing, carrier scattering, and screening) can be represented by rate models, with the effective rates extracted at the level of second Born-Markov approximations. In other circumstances, such as continuous wave multi-wavelength lasing, we are forced to fully include these higher correlation terms. In this thesis we identify the key contributors that control mode locking dynamics, the stability of single pulse mode-locking, and the influence of higher order correlation in sustaining multi-wavelength continuous wave operation.

Metasurface quantum-cascade laser with electrically switchable polarization

DOE PAGES

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.; ...

2017-04-20

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

Metasurface quantum-cascade laser with electrically switchable polarization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao; Chen, Daguan; Curwen, Christopher A.

Dynamic control of a laser’s output polarization state is desirable for applications in polarization sensitive imaging, spectroscopy, and ellipsometry. Using external elements to control the polarization state is a common approach. Less common and more challenging is directly switching the polarization state of a laser, which, however, has the potential to provide high switching speeds, compactness, and power efficiency. Here, we demonstrate a new approach to achieve direct and electrically controlled polarization switching of a semiconductor laser. This is enabled by integrating a polarization-sensitive metasurface with a semiconductor gain medium to selectively amplify a cavity mode with the designed polarizationmore » state, therefore leading to an output in the designed polarization. Here, the demonstration is for a terahertz quantum-cascade laser, which exhibits electrically controlled switching between two linear polarizations separated by 80°, while maintaining an excellent beam with a narrow divergence of ~3°×3° and a single-mode operation fixed at ~3.4 THz, combined with a peak power as high as 93 mW at a temperature of 77 K. The polarization-sensitive metasurface is composed of two interleaved arrays of surface-emitting antennas, all of which are loaded with quantum-cascade gain materials. Each array is designed to resonantly interact with one specific polarization; when electrical bias is selectively applied to the gain material in one array, selective amplification of one polarization occurs. The amplifying metasurface is used along with an output coupler reflector to build a vertical-external-cavity surface-emitting laser whose output polarization state can be switched solely electrically. In conclusion, this work demonstrates the potential of exploiting amplifying polarization-sensitive metasurfaces to create lasers with desirable polarization states—a concept which is applicable beyond the terahertz and can potentially be applied to shorter wavelengths.« less

Cavity-Mediated Coherent Coupling between Distant Quantum Dots

NASA Astrophysics Data System (ADS)

Nicolí, Giorgio; Ferguson, Michael Sven; Rössler, Clemens; Wolfertz, Alexander; Blatter, Gianni; Ihn, Thomas; Ensslin, Klaus; Reichl, Christian; Wegscheider, Werner; Zilberberg, Oded

2018-06-01

Scalable architectures for quantum information technologies require one to selectively couple long-distance qubits while suppressing environmental noise and cross talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated, long-distance coupling effectively minimizes undesirable direct cross talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power

NASA Astrophysics Data System (ADS)

Kaspar, Sebastian; Rattunde, Marcel; Töpper, Tino; Schwarz, Ulrich T.; Manz, Christian; Köhler, Klaus; Wagner, Joachim

2012-10-01

A 2 μm electro-optically cavity-dumped semiconductor disk laser (SDL) with a pulse full width at half maximum of 3 ns, a pulse peak power of 30 W, and repetition rates adjustable between 87 kHz and 1 MHz is reported. For ns-pulse cavity dumping the SDL was set up with a 35-cm long cavity into which an intra-cavity Brewster-angled polarizer prism and a Pockels cell for rotation of the linear polarization were inserted. By means of internal total reflection in the birefringent polarizer, pulses are coupled out of the cavity sideways. This variant of ns-pulse 2-μm SDL is well suited for applications such as high-precision light detection and ranging or ns-pulse laser materials processing after further power amplification.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Frequency control of tunable lasers using a frequency-calibrated λ-meter in an experiment on preparation of Rydberg atoms in a magneto-optical trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saakyan, S A; Vilshanskaya, E V; Zelener, B B

2015-09-30

A new technique is proposed and applied to study the frequency drift of an external-cavity semiconductor laser, locked to the transmission resonances of a thermally stabilised Fabry–Perot interferometer. The interferometer frequency drift is measured to be less than 2 MHz h{sup -1}. The laser frequency is measured using an Angstrom wavemeter, calibrated using an additional stabilised laser. It is shown that this system of laser frequency control can be used to identify Rydberg transitions in ultracold {sup 7}Li atoms. (control of laser radiation parameters)

Emission polarization control in semiconductor quantum dots coupled to a photonic crystal microcavity.

PubMed

Gallardo, E; Martínez, L J; Nowak, A K; van der Meulen, H P; Calleja, J M; Tejedor, C; Prieto, I; Granados, D; Taboada, A G; García, J M; Postigo, P A

2010-06-07

We study the optical emission of single semiconductor quantum dots weakly coupled to a photonic-crystal micro-cavity. The linearly polarized emission of a selected quantum dot changes continuously its polarization angle, from nearly perpendicular to the cavity mode polarization at large detuning, to parallel at zero detuning, and reversing sign for negative detuning. The linear polarization rotation is qualitatively interpreted in terms of the detuning dependent mixing of the quantum dot and cavity states. The present result is relevant to achieve continuous control of the linear polarization in single photon emitters.

Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakry, A.; Abdulrhmann, S.; Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg

2016-06-15

We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding themore » second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.« less

Cavity soliton laser based on mutually coupled semiconductor microresonators.

PubMed

Genevet, P; Barland, S; Giudici, M; Tredicce, J R

2008-09-19

We report on experimental observation of localized structures in two mutually coupled broad-area semiconductor resonators, one of which acts as a saturable absorber. These structures coexist with a dark homogeneous background and they have the same properties as cavity solitons without requiring the presence of a driving beam into the system. They can be switched individually on and off by means of a local addressing beam.

Delay feedback induces a spontaneous motion of two-dimensional cavity solitons in driven semiconductor microcavities

NASA Astrophysics Data System (ADS)

Tlidi, M.; Averlant, E.; Vladimirov, A.; Panajotov, K.

2012-09-01

We consider a broad area vertical-cavity surface-emitting laser (VCSEL) operating below the lasing threshold and subject to optical injection and time-delayed feedback. We derive a generalized delayed Swift-Hohenberg equation for the VCSEL system, which is valid close to the nascent optical bistability. We first characterize the stationary-cavity solitons by constructing their snaking bifurcation diagram and by showing clustering behavior within the pinning region of parameters. Then, we show that the delayed feedback induces a spontaneous motion of two-dimensional (2D) cavity solitons in an arbitrary direction in the transverse plane. We characterize moving cavity solitons by estimating their threshold and calculating their velocity. Numerical 2D solutions of the governing semiconductor laser equations are in close agreement with those obtained from the delayed generalized Swift-Hohenberg equation.

Coupled-resonator vertical-cavity lasers with two active gain regions

DOEpatents

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-05-20

A new class of coupled-resonator vertical-cavity semiconductor lasers has been developed. These lasers have multiple resonant cavities containing regions of active laser media, resulting in a multi-terminal laser component with a wide range of novel properties.

Noise reduction and control in mode-locked semiconductor diode lasers for use in next-generation all-optical analog-to-digital converters

NASA Astrophysics Data System (ADS)

DePriest, Christopher M.; Abeles, Joseph H.; Braun, Alan; Delfyett, Peter J., Jr.

2000-07-01

External-cavity, actively-modelocked semiconductor diode lasers (SDLs) have proven to be attractive candidates for forming the backbone of next-generation analog-to-digital converters (ADCs), which are currently being developed to sample signals at repetition rates exceeding several GHz with up to 12 bits of digital resolution. Modelocked SDLs are capable of producing waveform-sampling pulse trains with very low temporal jitter (phase noise) and very small fluctuations in pulse height (amplitude noise)--two basic conditions that must be met in order for high-speed ADCs to achieve projected design goals. Single-wavelength modelocked operation (at nominal repetition frequencies of 400 MHz) has produced pulse trains with very low amplitude noise (approximately 0.08%), and the implementation of a phase- locked-loop has been effective in reducing the system's low- frequency phase noise (RMS timing jitter for offset frequencies between 10 Hz and 10 kHz has been reduced from 240 fs to 27 fs).

Frequency characterization of a swept- and fixed-wavelength external-cavity quantum cascade laser by use of a frequency comb.

PubMed

Knabe, Kevin; Williams, Paul A; Giorgetta, Fabrizio R; Armacost, Chris M; Crivello, Sam; Radunsky, Michael B; Newbury, Nathan R

2012-05-21

The instantaneous optical frequency of an external-cavity quantum cascade laser (QCL) is characterized by comparison to a near-infrared frequency comb. Fluctuations in the instantaneous optical frequency are analyzed to determine the frequency-noise power spectral density for the external-cavity QCL both during fixed-wavelength and swept-wavelength operation. The noise performance of a near-infrared external-cavity diode laser is measured for comparison. In addition to providing basic frequency metrology of external-cavity QCLs, this comb-calibrated swept QCL system can be applied to rapid, precise broadband spectroscopy in the mid-infrared spectral region.

Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, K.; Camp, J.

2011-01-01

So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber.

PubMed

Pradhan, Rajib

2014-06-10

This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

PubMed

Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

2007-07-01

We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

Self-contained sub-millimeter wave rectifying antenna integrated circuit

NASA Technical Reports Server (NTRS)

Siegel, Peter H. (Inventor)

2004-01-01

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Modeling and experimental result analysis for high-power VECSELs

NASA Astrophysics Data System (ADS)

Zakharian, Aramais R.; Hader, Joerg; Moloney, Jerome V.; Koch, Stephan W.; Lutgen, Stephan; Brick, Peter; Albrecht, Tony; Grotsch, Stefan; Luft, Johann; Spath, Werner

2003-06-01

We present a comparison of experimental and microscopically based model results for optically pumped vertical external cavity surface emitting semiconductor lasers. The quantum well gain model is based on a quantitative ab-initio approach that allows calculation of a complex material susceptibility dependence on the wavelength, carrier density and lattice temperature. The gain model is coupled to the macroscopic thermal transport, spatially resolved in both the radial and longitudinal directions, with temperature and carrier density dependent pump absorption. The radial distribution of the refractive index and gain due to temperature variation are computed. Thermal managment issues, highlighted by the experimental data, are discussed. Experimental results indicate a critical dependence of the input power, at which thermal roll-over occurs, on the thermal resistance of the device. This requires minimization of the substrate thickness and optimization of the design and placement of the heatsink. Dependence of the model results on the radiative and non-radiative carrier recombination lifetimes and cavity losses are evaluated.

Low-frequency fluctuations in vertical cavity lasers: Experiments versus Lang-Kobayashi dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torcini, Alessandro; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, via Sansone 1, 50019 Sesto Fiorentino; Barland, Stephane

2006-12-15

The limits of applicability of the Lang-Kobayashi (LK) model for a semiconductor laser with optical feedback are analyzed. The model equations, equipped with realistic values of the parameters, are investigated below the solitary laser threshold where low-frequency fluctuations (LFF's) are usually observed. The numerical findings are compared with experimental data obtained for the selected polarization mode from a vertical cavity surface emitting laser (VCSEL) subject to polarization selective external feedback. The comparison reveals the bounds within which the dynamics of the LK model can be considered as realistic. In particular, it clearly demonstrates that the deterministic LK model, for realisticmore » values of the linewidth enhancement factor {alpha}, reproduces the LFF's only as a transient dynamics towards one of the stationary modes with maximal gain. A reasonable reproduction of real data from VCSEL's can be obtained only by considering the noisy LK or alternatively deterministic LK model for extremely high {alpha} values.« less

Spectra, current flow, and wave-function morphology in a model PT -symmetric quantum dot with external interactions

NASA Astrophysics Data System (ADS)

Tellander, Felix; Berggren, Karl-Fredrik

2017-04-01

In this paper we use numerical simulations to study a two-dimensional (2D) quantum dot (cavity) with two leads for passing currents (electrons, photons, etc.) through the system. By introducing an imaginary potential in each lead the system is made symmetric under parity-time inversion (PT symmetric). This system is experimentally realizable in the form of, e.g., quantum dots in low-dimensional semiconductors, optical and electromagnetic cavities, and other classical wave analogs. The computational model introduced here for studying spectra, exceptional points (EPs), wave-function symmetries and morphology, and current flow includes thousands of interacting states. This supplements previous analytic studies of few interacting states by providing more detail and higher resolution. The Hamiltonian describing the system is non-Hermitian; thus, the eigenvalues are, in general, complex. The structure of the wave functions and probability current densities are studied in detail at and in between EPs. The statistics for EPs is evaluated, and reasons for a gradual dynamical crossover are identified.

Discrete wavelength-locked external cavity laser

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey S. (Inventor); Silver, Joel A. (Inventor)

2005-01-01

An external cavity laser (and method of generating laser light) comprising: a laser light source; means for collimating light output by the laser light source; a diffraction grating receiving collimated light; a cavity feedback mirror reflecting light received from the diffraction grating back to the diffraction grating; and means for reliably tuning the external cavity laser to discrete wavelengths.

Selection of lasing direction in single mode semiconductor square ring cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jin-Woong; Kim, Kyoung-Youm; Moon, Hee-Jong

We propose and demonstrate a selection scheme of lasing direction by imposing a loss imbalance structure into the single mode square ring cavity. The control of the traveling direction is realized by introducing a taper-step section in one of the straight waveguides of the square ring cavity. It was shown by semi-analytic calculation that the taper-step section in the cavity provides effective loss imbalance between two travelling directions as the round trip repeats. Various kinds of square cavities were fabricated using InGaAsP/InGaAs multiple quantum well semiconductor materials in order to test the direction selectivity while maintaining the single mode. Wemore » also measured the pump power dependent lasing spectra to investigate the maintenance property of the lasing direction. The experimental results demonstrated that the proposed scheme is an efficient means for a unidirectional lasing in a single mode laser.« less

Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roppo, V.; Charles M. Bowden Research Facility, US Army RDECOM, Redstone Arsenal, Alabama 35803; Cojocaru, C.

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and uv ranges.

Deterministic radiative coupling of two semiconductor quantum dots to the optical mode of a photonic crystal nanocavity.

PubMed

Calic, M; Jarlov, C; Gallo, P; Dwir, B; Rudra, A; Kapon, E

2017-06-22

A system of two site-controlled semiconductor quantum dots (QDs) is deterministically integrated with a photonic crystal membrane nano-cavity. The two QDs are identified via their reproducible emission spectral features, and their coupling to the fundamental cavity mode is established by emission co-polarization and cavity feeding features. A theoretical model accounting for phonon interaction and pure dephasing reproduces the observed results and permits extraction of the light-matter coupling constant for this system. The demonstrated approach offers a platform for scaling up the integration of QD systems and nano-photonic elements for integrated quantum photonics applications.

Photonic integrated circuits unveil crisis-induced intermittency.

PubMed

Karsaklian Dal Bosco, Andreas; Akizawa, Yasuhiro; Kanno, Kazutaka; Uchida, Atsushi; Harayama, Takahisa; Yoshimura, Kazuyuki

2016-09-19

We experimentally investigate an intermittent route to chaos in a photonic integrated circuit consisting of a semiconductor laser with time-delayed optical feedback from a short external cavity. The transition from a period-doubling dynamics to a fully-developed chaos reveals a stage intermittently exhibiting these two dynamics. We unveil the bifurcation mechanism underlying this route to chaos by using the Lang-Kobayashi model and demonstrate that the process is based on a phenomenon of attractor expansion initiated by a particular distribution of the local Lyapunov exponents. We emphasize on the crucial importance of the distribution of the steady-state solutions introduced by the time-delayed feedback on the existence of this intermittent dynamics.

Dielectric behavior of semiconductors at microwave frequencies

NASA Technical Reports Server (NTRS)

Dahiya, Jai N.

1992-01-01

A cylindrical microwave resonant cavity in TE(011) (Transverse Electric) mode is used to study the dielectric relaxation in germanium and silicon. The samples of these semiconductors are used to perturb the electric field in the cavity, and Slater's perturbation equations are used to calculate the real and imaginary parts of the dielectric constant. The dielectric loss of germanium and silicon is studied at different temperatures, and Debye's equations are used to calculate the relaxation time at these temperatures.

[Comparison of ability to humidification of inspired air through the nose and oral cavity using dew point hygrometer].

PubMed

Paczesny, Daniel; Rapiejko, Piotr; Weremczuk, Jerzy; Jachowicz, Ryszard; Jurkiewicz, Dariusz

2007-01-01

Aim of this study was to check at the hospital the dew point hygrometer for fast measurement of air humidity in upper airways. The nose ability to humidification of inspired air and partially recover moisture from expired air was evaluated. Measurements from respiration through the nose and oral cavity were compared. The study was carried out in a group of 30 people (8 female and 22 male), age group 18 to 70 (mean age: 37 years old). In 22 of the participants there were no deviation from normal state in laryngologic examination, while in 4 participants nasal septum deviation without imaired nasal; oatency was found, in other 3--nasal vonchae hyperthrophy and in 1--nasal polips (grade I). The measurements of air humidity in upper air ways was done using specially designed and constructed measurement system. The air inspired through the nose and oral cavity is humidified. For typical external conditions (T = 22 degrees C i RH = 50%) the nose humidifies inspired air two times better then oral cavity (short time range of measurement approximately 1 min). Moisture from expired air through the nose is partially recovered (for patients with regular patency is 25% of the value of humidifying of inspired air). The oral cavity does not have ability to partially recovery moisture form expired air. The paper presented fast dew point hygrometer based on semiconductor microsystems for measurement humidity in inspired and expired air through the nose and oral cavity. Presented system can be a proper instrument for evaluation of nasal functions.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

NASA Astrophysics Data System (ADS)

Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

1988-11-01

A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

Estimation of Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2012-01-01

We evaluate mechanical thermal noise in semiconductor lasers, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Our simple model determines an underlying fundamental limit for the frequency noise of free-running semiconductor laser, and provides a framework: where the noise may be potentially reduced with improved design.

Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity

NASA Astrophysics Data System (ADS)

Chen, Ting-Wei; Cheng, Szu-Cheng

2018-01-01

This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

NASA Astrophysics Data System (ADS)

Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

2018-02-01

Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akparov, V V; Dmitriev, Valentin G; Duraev, V P

A semiconductor ring laser (SRL) with a radiation wavelength of 1540 nm and a fibre ring cavity is developed and studied in several main lasing regimes. An SRL design based on a semiconductor optical travelling-wave amplifier and a ring cavity, composed of a single-mode polarisation-maintaining fibre, is considered. The SRL is studied in the regime of a rotation speed sensor, in which the frequency shift of counterpropagating waves in the SRL is proportional to its rotation speed. The minimum rotation speed that can be detected using the SRL under consideration depends on the cavity length; in our experiment it turnedmore » to be 1deg s{sup -1}. The changes in the threshold current, emission spectrum, and fundamental radiation wavelength upon closing and opening the SRL ring cavity and with a change in its radius are also investigated. (lasers)« less

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

NASA Astrophysics Data System (ADS)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Multiphoton in vivo imaging with a femtosecond semiconductor disk laser

PubMed Central

Voigt, Fabian F.; Emaury, Florian; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-01-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging. PMID:28717563

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

PubMed

Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

2006-03-15

Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

REVIEW ARTICLE: Harmonically mode-locked semiconductor-based lasers as high repetition rate ultralow noise pulse train and optical frequency comb sources

NASA Astrophysics Data System (ADS)

Quinlan, F.; Ozharar, S.; Gee, S.; Delfyett, P. J.

2009-10-01

Recent experimental work on semiconductor-based harmonically mode-locked lasers geared toward low noise applications is reviewed. Active, harmonic mode-locking of semiconductor-based lasers has proven to be an excellent way to generate 10 GHz repetition rate pulse trains with pulse-to-pulse timing jitter of only a few femtoseconds without requiring active feedback stabilization. This level of timing jitter is achieved in long fiberized ring cavities and relies upon such factors as low noise rf sources as mode-lockers, high optical power, intracavity dispersion management and intracavity phase modulation. When a high finesse etalon is placed within the optical cavity, semiconductor-based harmonically mode-locked lasers can be used as optical frequency comb sources with 10 GHz mode spacing. When active mode-locking is replaced with regenerative mode-locking, a completely self-contained comb source is created, referenced to the intracavity etalon.

Cavity QED analysis of an exciton-plasmon hybrid molecule via the generalized nonlocal optical response method

NASA Astrophysics Data System (ADS)

Hapuarachchi, Harini; Premaratne, Malin; Bao, Qiaoliang; Cheng, Wenlong; Gunapala, Sarath D.; Agrawal, Govind P.

2017-06-01

A metal nanoparticle coupled to a semiconductor quantum dot forms a tunable hybrid system which exhibits remarkable optical phenomena. Small metal nanoparticles possess nanocavitylike optical concentration capabilities due to the presence of strong dipolar excitation modes in the form of localized surface plasmons. Semiconductor quantum dots have strong luminescent capabilities widely used in many applications such as biosensing. When a quantum dot is kept in the vicinity of a metal nanoparticle, a dipole-dipole coupling occurs between the two nanoparticles giving rise to various optical signatures in the scattered spectra. This coupling makes the two nanoparticles behave like a single hybrid molecule. Hybrid molecules made of metal nanoparticles (MNPs) and quantum dots (QDs) under the influence of an external driving field have been extensively studied in literature, using the local response approximation (LRA). However, such previous work in this area was not adequate to explain some experimental observations such as the size-dependent resonance shift of metal nanoparticles which becomes quite significant with decreasing diameter. The nonlocal response of metallic nanostructures which is hitherto disregarded by such studies is a main reason for such nonclassical effects. The generalized nonlocal optical response (GNOR) model provides a computationally less-demanding path to incorporate such properties into the theoretical models. It allows unified theoretical explanation of observed experimental phenomena which previously seemed to require ab initio microscopic theory. In this paper, we analyze the hybrid molecule in an external driving field as an open quantum system using a cavity-QED approach. In the process, we quantum mechanically model the dipole moment operator and the dipole response field of the metal nanoparticle taking the nonlocal effects into account. We observe that the spectra resulting from the GNOR based model effectively demonstrate the experimentally observed size dependent amplitude scaling, linewidth broadening, and resonance shift phenomena compared to the respective LRA counterparts. Then, we provide a comparison between our suggested GNOR based cavity-QED model and the conventional LRA model, where it becomes evident that our analytical model provides a close match to the experimentally suggested behavior. Furthermore, we show that the Rayleigh scattering spectra of the MNP-QD hybrid molecule possess an asymmetric Fano interference pattern that is tunable to suit various applications.

Instantaneous lineshape analysis of Fourier domain mode-locked lasers.

PubMed

Todor, Sebastian; Biedermann, Benjamin; Wieser, Wolfgang; Huber, Robert; Jirauschek, Christian

2011-04-25

We present a theoretical and experimental analysis of the instantaneous lineshape of Fourier domain mode-locked (FDML) lasers, yielding good agreement. The simulations are performed employing a recently introduced model for FDML operation. Linewidths around 10 GHz are found, which is significantly below the sweep filter bandwidth. The effect of detuning between the sweep filter drive frequency and cavity roundtrip time is studied revealing features that cannot be resolved in the experiment, and shifting of the instantaneous power spectrum against the sweep filter center frequency is analyzed. We show that, in contrast to most other semiconductor based lasers, the instantaneous linewidth is governed neither by external noise sources nor by amplified spontaneous emission, but it is directly determined by the complex FDML dynamics.

Quartz tuning fork-based photodetector for mid-infrared laser spectroscopy

NASA Astrophysics Data System (ADS)

Ding, Junya; He, Tianbo; Zhou, Sheng; Zhang, Lei; Li, Jingsong

2018-05-01

In this paper, we report a new type of photoelectric detector based on a standard quartz crystal tuning fork (QCTF) with resonant frequency of 32 kHz for spectroscopic applications. Analogous to the photoelectric effect of traditional semiconductor detectors, we utilize the piezoelectric effect of the QCTF to gauge the light intensity. To explore the capabilities of this technique, the impact of incident light beam excitation positions with respect to QCTF on signal amplitude, resonant frequency and Q factor, as well as the dependence on incident light intensity, ambient pressure and temperature, was investigated in detail. Finally, the QCTF-based photodetector was successfully demonstrated for qualitative analysis of gasoline components by combing a broadband tunable external cavity quantum cascade laser.

Tunable room-temperature spin-selective optical Stark effect in solution-processed layered halide perovskites.

PubMed

Giovanni, David; Chong, Wee Kiang; Dewi, Herlina Arianita; Thirumal, Krishnamoorthy; Neogi, Ishita; Ramesh, Ramamoorthy; Mhaisalkar, Subodh; Mathews, Nripan; Sum, Tze Chien

2016-06-01

Ultrafast spin manipulation for opto-spin logic applications requires material systems that have strong spin-selective light-matter interaction. Conventional inorganic semiconductor nanostructures [for example, epitaxial II to VI quantum dots and III to V multiple quantum wells (MQWs)] are considered forerunners but encounter challenges such as lattice matching and cryogenic cooling requirements. Two-dimensional halide perovskite semiconductors, combining intrinsic tunable MQW structures and large oscillator strengths with facile solution processability, can offer breakthroughs in this area. We demonstrate novel room-temperature, strong ultrafast spin-selective optical Stark effect in solution-processed (C6H4FC2H4NH3)2PbI4 perovskite thin films. Exciton spin states are selectively tuned by ~6.3 meV using circularly polarized optical pulses without any external photonic cavity (that is, corresponding to a Rabi energy of ~55 meV and equivalent to applying a 70 T magnetic field), which is much larger than any conventional system. The facile halide and organic replacement in these perovskites affords control of the dielectric confinement and thus presents a straightforward strategy for tuning light-matter coupling strength.

Dynamics in terahertz semiconductor microcavity: quantum noise spectra

NASA Astrophysics Data System (ADS)

Jabri, H.; Eleuch, H.

2018-05-01

We investigate the physics of an optical semiconductor microcavity containing a coupled double quantum well interacting with cavity photons. The photon statistics of the transmitted light by the cavity is explored. We show that the nonlinear interactions in the direct and indirect excitonic modes generate an important squeezing despite the weak nonlinearities. When the strong coupling regime is achieved, the noise spectra of the system is dominated by the indirect exciton distribution. At the opposite, in the weak regime, direct excitons contribute much larger in the noise spectra.

All-optical logic gates and wavelength conversion via the injection locking of a Fabry-Perot semiconductor laser

NASA Astrophysics Data System (ADS)

Harvey, E.; Pochet, M.; Schmidt, J.; Locke, T.; Naderi, N.; Usechak, N. G.

2013-03-01

This work investigates the implementation of all-optical logic gates based on optical injection locking (OIL). All-optical inverting, NOR, and NAND gates are experimentally demonstrated using two distributed feedback (DFB) lasers, a multi-mode Fabry-Perot laser diode, and an optical band-pass filter. The DFB lasers are externally modulated to represent logic inputs into the cavity of the multi-mode Fabry-Perot slave laser. The input DFB (master) lasers' wavelengths are aligned with the longitudinal modes of the Fabry-Perot slave laser and their optical power is used to modulate the injection conditions in the Fabry-Perot slave laser. The optical band-pass filter is used to select a Fabry- Perot mode that is either suppressed or transmitted given the logic state of the injecting master laser signals. When the input signal(s) is (are) in the on state, injection locking, and thus the suppression of the non-injected Fabry-Perot modes, is induced, yielding a dynamic system that can be used to implement photonic logic functions. Additionally, all-optical photonic processing is achieved using the cavity-mode shift produced in the injected slave laser under external optical injection. The inverting logic case can also be used as a wavelength converter — a key component in advanced wavelength-division multiplexing networks. As a result of this experimental investigation, a more comprehensive understanding of the locking parameters involved in injecting multiple lasers into a multi-mode cavity and the logic transition time is achieved. The performance of optical logic computations and wavelength conversion has the potential for ultrafast operation, limited primarily by the photon decay rate in the slave laser.

Metasurface external cavity laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Luyao, E-mail: luyaoxu.ee@ucla.edu; Curwen, Christopher A.; Williams, Benjamin S.

2015-11-30

A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range, which is based upon an amplifying metasurface reflector composed of a sub-wavelength array of antenna-coupled quantum-cascade sub-cavities. Lasing is possible when the metasurface reflector is placed into a low-loss external cavity such that the external cavity—not the sub-cavities—determines the beam properties. A near-Gaussian beam of 4.3° × 5.1° divergence is observed and an output power level >5 mW is achieved. The polarized response of the metasurface allows the use of a wire-grid polarizer as an output coupler that is continuously tunable.

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V

2013-05-31

The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible tomore » use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)« less

Effect of flow oscillations on cavity drag and a technique for their control

NASA Technical Reports Server (NTRS)

Gharib, M.; Roshko, A.; Sarohia, V.

1985-01-01

Experiments to relate the state of the shear layer to cavity drag have been performed in a water channel using a 4" axisymmetric cavity model. Detailed flow measurements in various cavity flow oscillation phases, amplitude amplification along the flow direction, distribution of shear stress, and other momentum flux obtained by laser Doppler velocimeter are presented. Measurements show exponential dependence of cavity drag on the length of the cavity. A jump in the cavity drag coefficient is observed as the cavity flow shows a bluff body wake type behavior. Natural and forced oscillations are introduced by a sinusoidally heated thin-film strip which excites the Tollmein-Schlichting waves in the boundary layer upstream of the gap. For a large gap, self-sustained periodic oscillations are observed, while for smaller gaps, which do not oscillate naturally, periodical oscillations can be obtained by external forcing through the strip heater. The drag of the cavity can be increased by one order of magnitude in the non-oscillating case through external forcing. Also, it is possible to completely eliminate mode switching by external forcing. For the first time, it is demonstrated that amplitude of cavity flow Kelvin-Helmholtz wave is dampened or cancelled by introduction of external perturbation of natural flow frequency but different phase.

Room temperature high circular dichroism ultraviolet lasing from planar spiral metal-GaN nanowire cavity (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shih, Min-Hsiung

2016-09-01

Circularly polarized light and chiroptical effect have received considerable attention in advanced photonic and electronic technologies including optical spintronics, quantum-based optical information processing and communication, and high-efficiency liquid crystal display backlights. Moreover, the development of circularly polarized photon sources has played a major role in circular dichroism (CD) spectroscopy, which is important for analyses of optically active molecules, chiral synthesis in biology and chemistry, and ultrafast magnetization control. However, the conventional collocation of light-emitting devices and additional circular-polarization converters that produce circularly polarized beams makes the setup bulky and hardly compatible with nanophotonic devices in ultrasmall scales. In fact, the direct generation of circularly polarized photons may simplify the system integration, compact the setup, lower the cost of external components, and perhaps enhance the power efficiency. In this work, with the spiral-type metal-gallium nitride (GaN) nanowire cavity, we demonstrated an ultrasmall semiconductor laser capable of emitting circularly-polarized photons. The left- and right-hand spiral metal nanowire cavities with varied periods were designed at ultraviolet wavelengths to achieve the high quality factor circular dichroism metastructures. The dissymmetry factors characterizing the degrees of circular polarizations of the left- and right-hand chiral lasers were 1.4 and -1.6 (2 if perfectly circular polarized), respectively. The results show that the chiral cavities with only 5 spiral periods can achieve lasing signals with decently high degrees of circular polarizations.

Long range spin qubit interaction mediated by microcavity polaritons

NASA Astrophysics Data System (ADS)

Piermarocchi, Carlo; Quinteiro, Guillermo F.; Fernandez-Rossier, Joaquin

2007-03-01

Planar microcavities are semiconductor devices that confine the electromagnetic field by means of two parallel semiconductor mirrors. When a quantum well (QW) is placed inside a planar microcavity, the excitons in the QW couple to confined electromagnetic modes. In the strong-coupling regime, excitons and cavity photons give rise to new states, cavity polaritons, which appear in two branches separated by a vacuum Rabi splitting. We study theoretically the dynamics of localized spins in the QW interacting with cavity polaritons. Our calculations consider localized electron spins of shallow neutral donors in GaAs (e.g., Si), but the theory is valid for other impurities and host semiconductors, as well as to charged quantum dots. In the strong-coupling regime, the vacuum Rabi splitting introduces anisotropies in the spin coupling. Moreover, due to their photon-like mass, polaritons provide an extremely long spin coupling range. This suggests the realization of two-qubit all-optical quantum operations within tens of picoseconds with spins localized as far as hundreds of nanometers apart. [G. F. Quinteiro et al., Phys. Rev. Lett. 97 097401, (2006)].

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Simple pulsed semiconductor lasers

NASA Astrophysics Data System (ADS)

Hulicius, E.; Abrahám, A.; Sĭmeček, T.

1988-11-01

A brief review is given of the main characteristics of pulsed GaAlAs/GaAs lasers made in Czechoslovakia. A description is given of laser structures with large optical cavities and their electrical, optical, and service life characteristics are reported.

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers.

PubMed

Chen, X; Bhola, B; Huang, Y; Ho, S T

2010-08-02

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process

DTIC Science & Technology

1994-03-01

Epitaxial structure of vertical cavity surface - emitting laser ( VCSEL ...diameter (75 tum < d< 150 prm) vertical - cavity surface - emitting lasers fabricated from an epitaxial structure containing a single In0 .2Ga 8.,As quantum...development of vertical - cavity surface - emitting lasers ( VCSELs ) [1] has enabled III-V semiconductor technology to be applied to cer- tain optical

Linearly Polarized Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser (Postprint)

DTIC Science & Technology

2007-03-01

Lamb, Jr., Laser Physics Addison-Wesley, Reading, MA, 1974, pp. 125-126. 7A. E. Siegman , Lasers University Sciences Books, Sausalito, CA, 1986, pp...AFRL-RY-WP-TP-2008-1171 LINEARLY POLARIZED DUAL-WAVELENGTH VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING LASER (Postprint) Li Fan, Mahmoud...LINEARLY POLARIZED DUAL-WAVELENGTH VERTICAL-EXTERNAL- CAVITY SURFACE-EMITTING LASER (Postprint) 5a. CONTRACT NUMBER IN-HOUSE 5b. GRANT NUMBER 5c

Hole-cyclotron instability in semiconductor quantum plasmas

NASA Astrophysics Data System (ADS)

Areeb, F.; Rasheed, A.; Jamil, M.; Siddique, M.; Sumera, P.

2018-01-01

The excitation of electrostatic hole-cyclotron waves generated by an externally injected electron beam in semiconductor plasmas is examined using a quantum hydrodynamic model. The quantum effects such as tunneling potential, Fermi degenerate pressure, and exchange-correlation potential are taken care of. The growth rate of the wave is analyzed on varying the parameters normalized by hole-plasma frequency, like the angle θ between propagation vector and B0∥z ̂ , speed of the externally injected electron beam v0∥k , thermal temperature of the electron beam τ, external magnetic field B0∥z ̂ that modifies the hole-cyclotron frequency, and finally, the semiconductor electron number density. The instability of the hole-cyclotron wave seeks its applications in semiconductor devices.

Continuous-wave, single-frequency 229  nm laser source for laser cooling of cadmium atoms.

PubMed

Kaneda, Yushi; Yarborough, J M; Merzlyak, Yevgeny; Yamaguchi, Atsushi; Hayashida, Keitaro; Ohmae, Noriaki; Katori, Hidetoshi

2016-02-15

Continuous-wave output at 229 nm for the application of laser cooling of Cd atoms was generated by the fourth harmonic using two successive second-harmonic generation stages. Employing a single-frequency optically pumped semiconductor laser as a fundamental source, 0.56 W of output at 229 nm was observed with a 10-mm long, Brewster-cut BBO crystal in an external cavity with 1.62 W of 458 nm input. Conversion efficiency from 458 nm to 229 nm was more than 34%. By applying a tapered amplifier (TA) as a fundamental source, we demonstrated magneto-optical trapping of all stable Cd isotopes including isotopes Cd111 and Cd113, which are applicable to optical lattice clocks.

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems

NASA Astrophysics Data System (ADS)

Hughes, Stephen; Agarwal, Girish S.

2017-02-01

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Anisotropy-Induced Quantum Interference and Population Trapping between Orthogonal Quantum Dot Exciton States in Semiconductor Cavity Systems.

PubMed

Hughes, Stephen; Agarwal, Girish S

2017-02-10

We describe how quantum dot semiconductor cavity systems can be engineered to realize anisotropy-induced dipole-dipole coupling between orthogonal dipole states in a single quantum dot. Quantum dots in single-mode cavity structures as well as photonic crystal waveguides coupled to spin states or linearly polarized excitons are considered. We demonstrate how the dipole-dipole coupling can control the radiative decay rate of excitons and form pure entangled states in the long time limit. We investigate both field-free entanglement evolution and coherently pumped exciton regimes, and show how a double-field pumping scenario can completely eliminate the decay of coherent Rabi oscillations and lead to population trapping. In the Mollow triplet regime, we explore the emitted spectra from the driven dipoles and show how a nonpumped dipole can take on the form of a spectral triplet, quintuplet, or a singlet, which has applications for producing subnatural linewidth single photons and more easily accessing regimes of high-field quantum optics and cavity-QED.

Manipulating Nonlinear Emission and Cooperative Effect of CdSe/ZnS Quantum Dots by Coupling to a Silver Nanorod Complex Cavity

PubMed Central

Nan, Fan; Cheng, Zi-Qiang; Wang, Ya-Lan; Zhang, Qing; Zhou, Li; Yang, Zhong-Jian; Zhong, Yu-Ting; Liang, Shan; Xiong, Qihua; Wang, Qu-Quan

2014-01-01

Colloidal semiconductor quantum dots have three-dimensional confined excitons with large optical oscillator strength and gain. The surface plasmons of metallic nanostructures offer an efficient tool to enhance exciton-exciton coupling and excitation energy transfer at appropriate geometric arrangement. Here, we report plasmon-mediated cooperative emissions of approximately one monolayer of ensemble CdSe/ZnS quantum dots coupled with silver nanorod complex cavities at room temperature. Power-dependent spectral shifting, narrowing, modulation, and amplification are demonstrated by adjusting longitudinal surface plasmon resonance of silver nanorods, reflectivity and phase shift of silver nanostructured film, and mode spacing of the complex cavity. The underlying physical mechanism of the nonlinear excitation energy transfer and nonlinear emissions are further investigated and discussed by using time-resolved photoluminescence and finite-difference time-domain numerical simulations. Our results suggest effective strategies to design active plasmonic complex cavities for cooperative emission nanodevices based on semiconductor quantum dots. PMID:24787617

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

NASA Astrophysics Data System (ADS)

Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

2018-05-01

Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

Fabrication et caracterisation de cavites organiques a modes de galerie

NASA Astrophysics Data System (ADS)

Amrane, Tassadit

The aim of this master project is to combine the high quality factor of whispering gallery optical microcavities with the high photoluminescence efficiency of conjugated polymers. These polymer-cavity composite systems have a great potential for studying the interaction of light and matter in the strong coupling regime. In particular, this system would offer a great opportunity to create a Bose-Einstein condensate of polaritons, the quasi-particles made from a strong interaction between excitons and photons. Organic semiconductors, with their large delocalized excitons, coupled to good whispering gallery cavities with high quality factors and small volumes are an ideal system for this purpose. Two approaches toward this end were explored: in the first approach a pre-existing dielectric whispering gallery cavity was coated with a thin film of conjugated polymer, while in the second one the whispering gallery cavity was fabricated directly with the organic semi-conductor. For testing the first approach, a silica microsphere was dip-coated with copolymer, and the interaction between the whispering gallery modes in the microcavity and the copolymer was studied using photoluminescence spectroscopy. The well-defined resonances obtained at the emission wavelength of the organic material confirm the effective coupling between the photoluminescence and the modes of the cavity. In the second approach, we developed a process to fabricate microdisk cavities with the copolymer. The difficulty in this approach lies in the sensitivity of the organic semiconductor to the microfabrication process. It is critical to avoid dissolving or otherwise altering it during the photolithographic steps. For this purpose a protective polymer, parylene-C, is deposited on the top of the copolymer. This protective polymer was chosen to be transparent at the absorption and emission wavelengths of the copolymer and inert in the solvents used during the different steps of microfabrication. The development of this fabrication process allowed us to obtain a whispering gallery cavity with a quality factor of 5x104. These promising results suggest future uses of this cavity to explore the interactions between the polymer and the cavity modes. The adequate setup for the detection of edge-emitted photoluminescence in copolymer microdisks is in progress and will be available for the future characterisation of organic whispering gallery cavities. The development of this polymer-based whispering gallery cavities is the first step along the way toward demonstrating a polariton Bose-Einstein condensate.

Wavelength-Agile External-Cavity Diode Laser for DWDM

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey S.; Bomse, David S.

2006-01-01

A prototype external-cavity diode laser (ECDL) has been developed for communication systems utilizing dense wavelength- division multiplexing (DWDM). This ECDL is an updated version of the ECDL reported in Wavelength-Agile External- Cavity Diode Laser (LEW-17090), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 14a. To recapitulate: The wavelength-agile ECDL combines the stability of an external-cavity laser with the wavelength agility of a diode laser. Wavelength is modulated by modulating the injection current of the diode-laser gain element. The external cavity is a Littman-Metcalf resonator, in which the zeroth-order output from a diffraction grating is used as the laser output and the first-order-diffracted light is retro-reflected by a cavity feedback mirror, which establishes one end of the resonator. The other end of the resonator is the output surface of a Fabry-Perot resonator that constitutes the diode-laser gain element. Wavelength is selected by choosing the angle of the diffracted return beam, as determined by position of the feedback mirror. The present wavelength-agile ECDL is distinguished by design details that enable coverage of all 60 channels, separated by 100-GHz frequency intervals, that are specified in DWDM standards.

Continuous-wave dual-wavelength operation of a distributed feedback laser diode with an external cavity using a volume Bragg grating

NASA Astrophysics Data System (ADS)

Zheng, Yujin; Sekine, Takashi; Kurita, Takashi; Kato, Yoshinori; Kawashima, Toshiyuki

2018-03-01

We demonstrate continuous-wave dual-wavelength operation of a broad-area distributed feedback (DFB) laser diode with a single external-cavity configuration. This high-power DFB laser has a narrow bandwidth (<0.29 nm) and was used as a single-wavelength source. A volume Bragg grating was used as an output coupler for the external-cavity DFB laser to output another stable wavelength beam with a narrow bandwidth of 0.27 nm. A frequency difference for dual-wavelength operation of 0.88 THz was achieved and an output power of up to 415 mW was obtained. The external-cavity DFB laser showed a stable dual-wavelength operation over the practical current and temperature ranges.

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khiar, A., E-mail: amir.khiar@jku.at; Witzan, M.; Hochreiner, A.

2014-06-09

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasingmore » is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.« less

High sensitivity detection of NO2 employing cavity ringdown spectroscopy and an external cavity continuously tunable quantum cascade laser.

PubMed

Rao, Gottipaty N; Karpf, Andreas

2010-09-10

A trace gas sensor for the detection of nitrogen dioxide based on cavity ringdown spectroscopy (CRDS) and a continuous wave external cavity tunable quantum cascade laser operating at room temperature has been designed, and its features and performance characteristics are reported. By measuring the ringdown times of the cavity at different concentrations of NO(2), we report a sensitivity of 1.2 ppb for the detection of NO(2) in Zero Air.

Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

NASA Astrophysics Data System (ADS)

Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

2016-03-01

We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

NASA Astrophysics Data System (ADS)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-05-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

NASA Technical Reports Server (NTRS)

Kozlovsky, William J.; Nabors, C. D.; Byer, Robert L.

1988-01-01

56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

III-V semiconductor resonators: A new strategy for broadband light perfect absorbers

NASA Astrophysics Data System (ADS)

Liu, Xiaoshan; Chen, Jian; Liu, Jiasong; Huang, Zhenping; Yu, Meidong; Pan, Pingping; Liu, Zhengqi

2017-11-01

Broadband light perfect absorbers (BPAs) are desirable for applications in numerous optoelectronics devices. In this work, a semiconductor-based broadband light perfect absorber (S-BPA) has been numerically demonstrated by utilizing plasmonlike resonances of high-index semiconductor resonators. A maximal absorption of 99.7% is observed in the near-infrared region. By taking the absorption above 80% into account, the spectral bandwidth reaches 340 nm. The absorption properties mainly originate from the optical cavity modes induced by the cylinder resonators and ultrathin semiconductor film. These optical properties and simple structural features can maintain the absorber platform with wide applications in semiconductor optoelectronics.

Time delay signature elimination of chaos in a semiconductor laser by dispersive feedback from a chirped FBG.

PubMed

Wang, Daming; Wang, Longsheng; Zhao, Tong; Gao, Hua; Wang, Yuncai; Chen, Xianfeng; Wang, Anbang

2017-05-15

Time delay signature (TDS) of a semiconductor laser subject to dispersive optical feedback from a chirped fibre Bragg grating (CFBG) is investigated experimentally and numerically. Different from mirror, CFBG provides additional frequency-dependent delay caused by dispersion, and thus induces external-cavity modes with irregular mode separation rather than a fixed separation induced by mirror feedback. Compared with mirror feedback, the CFBG feedback can greatly depress and even eliminate the TDS, although it leads to a similar quasi-period route to chaos with increases of feedback. In experiments, by using a CFBG with dispersion of 2000ps/nm, the TDS is decreased by 90% to about 0.04 compared with mirror feedback. Furthermore, both numerical and experimental results show that the TDS evolution is quite different: the TDS decreases more quickly down to a lower plateau (even background noise level of autocorrelation function) and never rises again. This evolution tendency is also different from that of FBG feedback, of which the TDS first decreases to a minimal value and then increases again as feedback strength increases. In addition, the CFBG feedback has no filtering effects and does not require amplification for feedback light.

Tunable room-temperature spin-selective optical Stark effect in solution-processed layered halide perovskites

PubMed Central

Giovanni, David; Chong, Wee Kiang; Dewi, Herlina Arianita; Thirumal, Krishnamoorthy; Neogi, Ishita; Ramesh, Ramamoorthy; Mhaisalkar, Subodh; Mathews, Nripan; Sum, Tze Chien

2016-01-01

Ultrafast spin manipulation for opto–spin logic applications requires material systems that have strong spin-selective light-matter interaction. Conventional inorganic semiconductor nanostructures [for example, epitaxial II to VI quantum dots and III to V multiple quantum wells (MQWs)] are considered forerunners but encounter challenges such as lattice matching and cryogenic cooling requirements. Two-dimensional halide perovskite semiconductors, combining intrinsic tunable MQW structures and large oscillator strengths with facile solution processability, can offer breakthroughs in this area. We demonstrate novel room-temperature, strong ultrafast spin-selective optical Stark effect in solution-processed (C6H4FC2H4NH3)2PbI4 perovskite thin films. Exciton spin states are selectively tuned by ~6.3 meV using circularly polarized optical pulses without any external photonic cavity (that is, corresponding to a Rabi energy of ~55 meV and equivalent to applying a 70 T magnetic field), which is much larger than any conventional system. The facile halide and organic replacement in these perovskites affords control of the dielectric confinement and thus presents a straightforward strategy for tuning light-matter coupling strength. PMID:27386583

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

DTIC Science & Technology

2015-07-16

SECURITY CLASSIFICATION OF: The InAs quantum dot (QD) grown on GaAs substrates represents a highly performance active region in the 1 - 1.3 µm...2015 Approved for Public Release; Distribution Unlimited Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface...ABSTRACT Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene Report

Resin bleed improvement on surface mount semiconductor device

NASA Astrophysics Data System (ADS)

Rajoo, Indra Kumar; Tahir, Suraya Mohd; Aziz, Faieza Abdul; Shamsul Anuar, Mohd

2018-04-01

Resin bleed is a transparent layer of epoxy compound which occurs during molding process but is difficult to be detected after the molding process. Resin bleed on the lead on the unit from the focused package, SOD123, can cause solderability failure at end customer. This failed unit from the customer will be considered as a customer complaint. Generally, the semiconductor company has to perform visual inspection after the plating process to detect resin bleed. Mold chase with excess hole, split cavity & stepped design ejector pin hole have been found to be the major root cause of resin bleed in this company. The modifications of the mold chase, changing of split cavity to solid cavity and re-design of the ejector pin proposed were derived after a detailed study & analysis conducted to arrive at these solutions. The solutions proposed have yield good results during the pilot run with zero (0) occurrence of resin bleed for 3 consecutive months.

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

PubMed

Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

2013-04-08

In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

Observations of cavity polaritons in one-dimensional photonic crystals containing a liquid-crystalline semiconductor based on perylene bisimide units

NASA Astrophysics Data System (ADS)

Sakata, T.; Suzuki, M.; Yamamoto, T.; Nakanishi, S.; Funahashi, M.; Tsurumachi, N.

2017-10-01

We investigated the optical transmission properties of one-dimensional photonic crystal (1D-PC) microcavity structures containing the liquid-crystalline (LC) perylene tetracarboxylic bisimide (PTCBI) derivative. We fabricated the microcavity structures for this study by two different methods and observed the cavity polaritons successfully in both samples. For one sample, since the PTCBI molecules were aligned in the cavity layer of the 1D-PC by utilizing a friction transfer method, vacuum Rabi splitting energy was strongly dependent on the polarization of the incident light produced by the peculiar optical features of the LC organic semiconductor. For the other sample, we did not utilize the friction transfer method and did not observe such polarization dependence. However, we did observe a relatively large Rabi splitting energy of 187 meV, probably due to the improvement of optical confinement effect.

Measurement technology based on laser internal/external cavity tuning

NASA Astrophysics Data System (ADS)

Zhang, Shulian

2011-08-01

For an ordinary laser with two cavity mirrors, if the length of laser cavity changes half wavelength the laser frequency changes one longitudinal mode separation. For a laser with three cavity mirrors, in which a feedback mirror is used to feed part of the laser output beam back into the laser cavity, the external cavity length changes half wavelength the laser intensity fluctuates one period. This presentation gives some research results in measurement field based on changing (tuning) the length of laser internal/external cavity, including 1) HeNe laser cavity-tuning nanometer displacement measurement instruments (laser nanometer rulers), 2) HeNe laser feedback displacement measurement, 3) Nd:YAG laser feedback nanometer displacement measurement, 4) benchmark of waveplate phase retardation measurement based on laser frequency splitting, 5) in-site waveplate phase retardation measurement instruments based on laser feedback and polarization hopping, 6) quasi-common-path microchip Nd:YAG laser feedback interferometer, 7) non-contact Nd:YAG laser feedback surface profile measurement. Some of these instruments have been put into application and display some irreplaceable advantages.

Resonant-cavity light-emitting diodes for optical interconnects

NASA Astrophysics Data System (ADS)

Jin, Xu

This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown narrow spectral linewidths of 7-10 nm, extracted light output power in the range of 200-300 muW, and modulation speed up to 300 MHz. This is the first demonstration of 1.3 muRCLEDs on GaAs substrates with performance comparable to InP based surface-emitting LEDs.

Effect of noise on the power spectrum of passively mode-locked lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliyahu, D.; Salvatore, R.A.; Yariv, A.

1997-01-01

We analyze the effects of noise on the power spectrum of pulse trains generated by a continuously operating passively mode-locked laser. The shape of the different harmonics of the power spectrum is calculated in the presence of correlated timing fluctuations between neighboring pulses and in the presence of amplitude fluctuations. The spectra at the different harmonics are influenced mainly by the nonstationary timing-jitter fluctuations; amplitude fluctuations slightly modify the spectral tails. Estimation of the coupling term between the longitudinal cavity modes or the effective saturable absorber coefficient is made from the timing-jitter correlation time. Experimental results from an external cavitymore » two-section semiconductor laser are given. The results show timing-jitter fluctuations having a relaxation time much longer than the repetition period. {copyright} 1997 Optical Society of America.« less

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE PAGES

Liu, Bo; Braiman, Yehuda

2018-02-06

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

NASA Astrophysics Data System (ADS)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bo; Braiman, Yehuda

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Study on the characteristic and application of DFB semiconductor lasers under optical injection for microwave photonics

NASA Astrophysics Data System (ADS)

Pu, Tao; Wang, Wei wei

2018-01-01

In order to apply optical injection effect in Microwave Photonics system, The red-shift effect of the cavity mode of the DFB semiconductor laser under single-frequency optical injection is studied experimentally, and the red-shift curve of the cavity mode is measured. The wavelength-selective amplification property of the DFB semiconductor laser under multi-frequency optical injection is also investigated, and the gain curves for the injected signals in different injection ratios are measured in the experiment. A novel and simple structure to implement a single-passband MPF with wideband tunability based on the wavelength-selective amplification of a DFB semiconductor laser under optical injection is proposed and experimentally demonstrated. MPFs with center frequency tuned from 13 to 41 GHz are realized in the experiment. A wideband and frequency-tunable optoelectronic oscillator based on a directly modulated distributed feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. By optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency makes the loop oscillate without the necessary of the electrical filter. An experiment is performed; microwave signals with frequency tuned from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers.

A reciprocity formulation for the EM scattering by an obstacle within a large open cavity

NASA Technical Reports Server (NTRS)

Pathak, Prabhakar H.; Burkholder, Robert J.

1993-01-01

A formulation based on a generalized reciprocity theorem is developed for analyzing the external high frequency EM scattering by a complex obstacle inside a relatively arbitrary open-ended waveguide cavity when it is illuminated by an external source. This formulation is also extended to include EM fields whose time dependence may be nonperiodic. A significant advantage of this formulation is that it allows one to break up the analysis into two independent parts; one deals with the waveguide cavity shape alone and the other with the obstacle alone. The external scattered field produced by the obstacle (in the presence of the waveguide cavity structure) is given in terms of a generalized reciprocity integral over a surface S(T) corresponding to the interior waveguide cavity cross section located conveniently but sufficiently close to the obstacle. Furthermore, the fields coupled into the cavity from the source in the exterior region generally need to propagate only one-way via the open front end (which is directly illuminated) to the interior surface S(T) in this approach, and not back, in order to find the external field scattered by the obstacle.

Integrated Nanoscale Antenna-LED for On-Chip Optical Communication

NASA Astrophysics Data System (ADS)

Fortuna, Seth

Traditional semiconductor light emitting diodes (LEDs) have low modulation speed because of long spontaneous emission lifetime. Spontaneous emission in semiconductors (and indeed most light emitters) is an inherently slow process owing to the size mismatch between the dipole length of the optical dipole oscillators responsible for light emission and the wavelength of the emitted light. More simply stated: semiconductors behave as a poor antenna for its own light emission. By coupling a semiconductor at the nanoscale to an external antenna, the spontaneous emission rate can be dramatically increased alluding to the exciting possibility of an antenna-LED that can be directly modulated faster than the laser. Such an antenna-LED is well-suited as a light source for on-chip optical communication where small size, fast speed, and high efficiency are needed to achieve the promised benefit of reduced power consumption of on-chip optical interconnect links compared with less efficient electrical interconnect links. Despite the promise of the antenna-LED, significant challenges remain to implement an antenna-coupled device in a monolithically integrated manner. Notably, most demonstrations of antenna-enhanced spontaneous emission have relied upon optical pumping of the light emitting material which is useful for fundamental studies; however, an electrical injection scheme is required for practical implementation of an antenna-LED. In this dissertation, demonstration of an electrically-injected III-V antenna-LED is reported: an important milestone toward on-chip optical interconnects. In the first part of this dissertation, the general design principles of enhancing the spontaneous emission rate of a semiconductor with an optical antenna is discussed. The cavity-backed slot antenna is shown to be uniquely suited for an electrically-injected antenna-LED because of large spontaneous emission enhancement, simple fabrication, and directional emission of light. The design, fabrication, and experimental results of the electrically-injected III-V antenna-LED is then presented. Clear evidence of antenna-enhanced electroluminescence is demonstrated including a large increase in the emitted light intensity with respect to an LED without antenna. Furthermore, it is shown that the active region emission wavelength is influenced by the antenna resonance and the emitted light is polarized; consistent with the expected behavior of the cavity-backed slot antenna. An antenna-LED consisting of a InGaAs quantum well active region is shown to have a large 200-fold enhancement of the spontaneous emission rate. In the last half of this dissertation, the performance of the antenna-LED is discussed. Remarkably, despite the high III-V surface recombination velocity, it is shown that an efficient antenna-LED consisting of an InGaAs active region is possible with an antenna-enhanced spontaneous emission rate. This is true provided the active region surface quality is preserved through the entire device process. A novel technique to preserve and clean InGaAs surfaces is reported. Finally, a rate-equation analysis shows that the optimized antenna-LED with cavity-backed slot antenna is fundamentally capable of achieving greater than 100 GHz direct modulation rate at high efficiency thus showing that an antenna-LED faster than the laser is achievable with this device architecture.

An external-cavity quantum cascade laser operating near 5.2 µm combined with cavity ring-down spectroscopy for multi-component chemical sensing

NASA Astrophysics Data System (ADS)

Dutta Banik, Gourab; Maity, Abhijit; Som, Suman; Pal, Mithun; Pradhan, Manik

2018-04-01

We report on the performance of a widely tunable continuous wave mode-hop-free external-cavity quantum cascade laser operating at λ ~ 5.2 µm combined with cavity ring-down spectroscopy (CRDS) technique for high-resolution molecular spectroscopy. The CRDS system has been utilized for simultaneous and molecule-specific detection of several environmentally and bio-medically important trace molecular species such as nitric oxide, nitrous oxide, carbonyl sulphide and acetylene (C2H2) at ultra-low concentrations by probing numerous rotationally resolved ro-vibrational transitions in the mid-IR spectral region within a relatively small spectral range of ~0.035 cm-1. This continuous wave external-cavity quantum cascade laser-based multi-component CRDS sensor with high sensitivity and molecular specificity promises applications in environmental sensing as well as non-invasive medical diagnosis through human breath analysis.

Rapid Swept-Wavelength External Cavity Quantum Cascade Laser for Open Path Sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brumfield, Brian E.; Phillips, Mark C.

2015-07-01

A rapidly tunable external cavity quantum cascade laser system is used for open path sensing. The system permits acquisition of transient absorption spectra over a 125 cm-1 tuning range in less than 0.01 s.

Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

NASA Astrophysics Data System (ADS)

Wang, M.; Huang, Y. J.; Ruan, S. C.

2018-04-01

In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

Multi-frequency klystron designed for high efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jensen, Aaron

A multi-frequency klystron has an electron gun which generates a beam, a circuit of bunch-align-collect (BAC) tuned cavities that bunch the beam and amplify an RF signal, a collector where the beam is collected and dumped, and a standard output cavity and waveguide coupled to a window to output RF power at a fundamental mode to an external load. In addition, the klystron has additional bunch-align-collect (BAC) cavities tuned to a higher harmonic frequency, and a harmonic output cavity and waveguide coupled via a window to an additional external load.

High-power 671  nm laser by second-harmonic generation with 93% efficiency in an external ring cavity.

PubMed

Cui, Xing-Yang; Shen, Qi; Yan, Mei-Chen; Zeng, Chao; Yuan, Tao; Zhang, Wen-Zhuo; Yao, Xing-Can; Peng, Cheng-Zhi; Jiang, Xiao; Chen, Yu-Ao; Pan, Jian-Wei

2018-04-15

Second-harmonic generation (SHG) is useful for obtaining single-frequency continuous-wave laser sources at various wavelengths for applications ranging from biology to fundamental physics. Using an external power-enhancement cavity is an effective approach to improve the frequency conversion efficiency. However, thermal effects limit the efficiency, particularly, in high-power operation. Therefore, reducing thermal effects is important when designing a cavity. This Letter reports the use of an external ring cavity for SHG, yielding a 5.2 W, 671 nm laser light with a conversion efficiency of 93.8±0.8% which, to the best of our knowledge, is a new record of conversion efficiency for an external ring cavity. It is achieved using a 10 mm length periodically poled potassium titanyl phosphate crystal and a 65 μm radius beam waist in the cavity so as to minimize thermal dephasing and thermal lensing. Furthermore, a method is developed to determine a conversion efficiency more accurately based on measuring the pump depletion using a photodiode detector and a maximum pump depletion up to 97% is recorded. In this method, the uncertainty is much less than that achieved in a common method by direct measuring with a power meter.

Analysis of Trace Gas Mixtures Using an External Cavity Quantum Cascade Laser Sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, Mark C.; Taubman, Matthew S.; Brumfield, Brian E.

2015-07-01

We measure and analyze mixtures of trace gases at ppb-ppm levels using an external cavity quantum cascade laser sensor with a 1-second response time. Accurate spectral fits are obtained in the presence of overlapping spectra.

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

NASA Astrophysics Data System (ADS)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

Donor states in inverse opals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahan, G. D.

We calculate the binding energy of an electron bound to a donor in a semiconductor inverse opal. Inverse opals have two kinds of cavities, which we call octahedral and tetrahedral, according to their group symmetry. We put the donor in the center of each of these two cavities and obtain the binding energy. The binding energies become very large when the inverse opal is made from templates with small spheres. For spheres less than 50 nm in diameter, the donor binding can increase to several times its unconfined value. Then electrons become tightly bound to the donor and are unlikelymore » to be thermally activated to the semiconductor conduction band. This conclusion suggests that inverse opals will be poor conductors.« less

Threshold Dynamics of a Semiconductor Single Atom Maser

NASA Astrophysics Data System (ADS)

Liu, Yinyu

Photon emission from single emitters provides fundamental insight into the detailed interaction between light and matter. Here we demonstrate a semiconductor single atom maser (SeSAM) that consists of a single InAs double quantum dot (DQD) that is coupled to a high quality factor microwave cavity. A finite bias results in population inversion in the DQD, enabling sizable cavity gain and stimulated emission. We develop a pulsed-gate approach that allows the SeSAM to be tuned across the masing threshold. The cavity output power as a function of DQD current is in good agreement with single atom maser theory once a small correction for lead emission is included. Photon statistics measurements show that the second-order correlation function of intra-cavity photon number, nc, crosses over from 〈nc2 〉 /〈nc 〉 2 = 2.1 below threshold to 〈nc2 〉 /〈nc 〉 2 = 1.2 above threshold. Large fluctuations are observed at threshold. In collaboration with J. Stehlik, C. Eichler, X. Mi, T. R. Hartke, M. J. Gullans, J. M. Taylor and J. R. Petta. Supported by the NSF and the Gordon and Betty Moore Foundation's EPiQS initiative through Grant No. GBMF4535.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Research and Development Strategies in the Semiconductor Industry

NASA Astrophysics Data System (ADS)

Bowling, Allen

2003-03-01

In the 21st Century semiconductor industry, there is a critical balance between internally funded semiconductor research and development (R) and externally funded R. External R may include jointly-funded research collaborations/partnerships with other device manufacturers, jointly-funded consortia-based R, and individually-funded research programs at universities and other contract research locations. Each of these approaches has merits and each has costs. There is a critical balance between keeping the internal research and development pipeline filled and keeping it from being overspent. To meet both competitive schedule and cost goals, a semiconductor device manufacturer must decide on a model for selection of internal versus external R. Today, one of the most critical decisions is whether or not to do semiconductor research and development on 300 mm silicon wafers. Equipment suppliers are doing first development on 300 mm equipment. So, for the device manufacturer, there is a balance between the cost of doing development on 300 mm wafers and the development time schedule driven by equipment availability. In the face of these cost and schedule elements, device manufacturers are looking to consortia such as SEMATECH, SRC, and SRC MARCO for early development and screening of new materials and device structure approaches. This also causes much more close development collaboration between device manufacturer and equipment supplier. Many device manufacturers are also making use of direct contract research with universities and other contract-research organizations, such as IMEC, LETI, and other government-funded research organizations around the world. To get the most out of these external research interactions, the company must develop a strategy for management and technology integration of external R.

High-efficiency neutron detectors and methods of making same

DOEpatents

McGregor, Douglas S.; Klann, Raymond

2007-01-16

Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as ¹⁰B or ⁶LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.

Electrical Tuning of Exciton-Plasmon Polariton Coupling in Monolayer MoS2 Integrated with Plasmonic Nanoantenna Lattice.

PubMed

Lee, Bumsu; Liu, Wenjing; Naylor, Carl H; Park, Joohee; Malek, Stephanie C; Berger, Jacob S; Johnson, A T Charlie; Agarwal, Ritesh

2017-07-12

Active control of light-matter interactions in semiconductors is critical for realizing next generation optoelectronic devices with real-time control of the system's optical properties and hence functionalities via external fields. The ability to dynamically manipulate optical interactions by applied fields in active materials coupled to cavities with fixed geometrical parameters opens up possibilities of controlling the lifetimes, oscillator strengths, effective mass, and relaxation properties of a coupled exciton-photon (or plasmon) system. Here, we demonstrate electrical control of exciton-plasmon coupling strengths between strong and weak coupling limits in a two-dimensional semiconductor integrated with plasmonic nanoresonators assembled in a field-effect transistor device by electrostatic doping. As a result, the energy-momentum dispersions of such an exciton-plasmon coupled system can be altered dynamically with applied electric field by modulating the excitonic properties of monolayer MoS 2 arising from many-body effects. In addition, evidence of enhanced coupling between charged excitons (trions) and plasmons was also observed upon increased carrier injection, which can be utilized for fabricating Fermionic polaritonic and magnetoplasmonic devices. The ability to dynamically control the optical properties of a coupled exciton-plasmonic system with electric fields demonstrates the versatility of the coupled system and offers a new platform for the design of optoelectronic devices with precisely tailored responses.

Single MoO3 nanoribbon waveguides: good building blocks as elements and interconnects for nanophotonic applications

NASA Astrophysics Data System (ADS)

Zhang, Li; Wu, Guoqing; Gu, Fuxing; Zeng, Heping

2015-11-01

Exploring new nanowaveguide materials and structures is of great scientific interest and technological significance for optical and photonic applications. In this work, high-quality single-crystal MoO3 nanoribbons (NRs) are synthesized and used for optical guiding. External light sources are efficiently launched into the single MoO3 NRs using silica fiber tapers. It is found that single MoO3 NRs are as good nanowaveguides with loss optical losses (typically less than 0.1 dB/μm) and broadband optical guiding in the visible/near-infrared region. Single MoO3 NRs have good Raman gains that are comparable to those of semiconductor nanowaveguides, but the second harmonic generation efficiencies are about 4 orders less than those of semiconductor nanowaveguides. And also no any third-order nonlinear optical effects are observed at high pump power. A hybrid Fabry-Pérot cavity containing an active CdSe nanowire and a passive MoO3 NR is also demonstrated, and the ability of coupling light from other active nanostructures and fluorescent liquid solutions has been further demonstrated. These optical properties make single MoO3 NRs attractive building blocks as elements and interconnects in miniaturized photonic circuitries and devices.

Plasma-Based Tunable High Frequency Power Limiter

NASA Astrophysics Data System (ADS)

Semnani, Abbas; Macheret, Sergey; Peroulis, Dimitrios

2016-09-01

Power limiters are often employed to protect sensitive receivers from being damaged or saturated by high-power incoming waves. Although wideband low-power limiters based on semiconductor technology are widely available, the options for high-power frequency-selective ones are very few. In this work, we study the application of a gas discharge tube (GDT) integrated in an evanescent-mode (EVA) cavity resonator as a plasma-based power limiter. Plasmas can inherently handle higher power in comparison with semiconductor diodes. Also, using a resonant structure provides the ability of having both lower threshold power and frequency-selective limiting, which are important if only a narrowband high-power signal is targeted. Higher input RF power results in stronger discharge in the GDT and consequently higher electron density which results in larger reflection. It is also possible to tune the threshold power by pre-ionizing the GDT with a DC bias voltage. As a proof of concept, a 2-GHz EVA resonator loaded by a 90-V GDT was fabricated and measured. With reasonable amount of insertion loss, the limiting threshold power was successfully tuned from 8.3 W to 590 mW when the external DC bias was varied from 0 to 80 V. The limiter performed well up to 100 W of maximum available input power.

Long-term Operation of an External Cavity Quantum Cascade Laser-based Trace-gas Sensor for Building Air Monitoring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, Mark C.; Craig, Ian M.

2013-11-03

We analyze the long-term performance and stability of a trace-gas sensor based on an external cavity quantum cascade laser using data collected over a one-year period in a building air monitoring application.

Mode switching in a multi-wavelength distributed feedback quantum cascade laser using an external micro-cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sidler, Meinrad; Institute for Quantum Electronics, ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich; Rauter, Patrick

2014-02-03

We demonstrate a multi-wavelength distributed feedback (DFB) quantum cascade laser (QCL) operating in a lensless external micro-cavity and achieve switchable single-mode emission at three distinct wavelengths selected by the DFB grating, each with a side-mode suppression ratio larger than 30 dB. Discrete wavelength tuning is achieved by modulating the feedback experienced by each mode of the multi-wavelength DFB QCL, resulting from a variation of the external cavity length. This method also provides a post-fabrication control of the lasing modes to correct for fabrication inhomogeneities, in particular, related to the cleaved facets position.

Optical feedback in dfb quantum cascade laser for mid-infrared cavity ring-down spectroscopy

NASA Astrophysics Data System (ADS)

Terabayashi, Ryohei; Sonnenschein, Volker; Tomita, Hideki; Hayashi, Noriyoshi; Kato, Shusuke; Jin, Lei; Yamanaka, Masahito; Nishizawa, Norihiko; Sato, Atsushi; Nozawa, Kohei; Hashizume, Kenta; Oh-hara, Toshinari; Iguchi, Tetsuo

2017-11-01

A simple external optical feedback system has been applied to a distributed feedback quantum cascade laser (DFB QCL) for cavity ring-down spectroscopy (CRDS) and a clear effect of feedback was observed. A long external feedback path length of up to 4m can decrease the QCL linewidth to around 50kHz, which is of the order of the transmission linewidth of our high finesse ring-down cavity. The power spectral density of the transmission signal from high finesse cavity reveals that the noise at frequencies above 20kHz is reduced dramatically.

Efficient expulsion of magnetic flux in superconducting radiofrequency cavities for high Q 0 applications

DOE PAGES

Posen, S.; Checchin, M.; Crawford, A. C.; ...

2016-06-03

Even when cooled through its transition temperature in the presence of an external magnetic field, a superconductor can expel nearly all external magnetic flux. This Letter presents an experimental study to identify the parameters that most strongly influence flux trapping in high purity niobium during cooldown. This is critical to the operation of superconducting radiofrequency cavities, in which trapped flux degrades the quality factor and therefore cryogenic efficiency. Flux expulsion was measured on a large survey of 1.3 GHz cavities prepared in various ways. It is shown that both spatial thermal gradient and high temperature treatment are critical to expellingmore » external magnetic fields, while surface treatment has minimal effect. For the first time, it is shown that a cavity can be converted from poor expulsion behavior to strong expulsion behavior after furnace treatment, resulting in a substantial improvement in quality factor. In conclusion, future plans are described to build on this result in order to optimize treatment for future cavities.« less

Ring resonator based narrow-linewidth semiconductor lasers

NASA Technical Reports Server (NTRS)

Ksendzov, Alexander (Inventor)

2005-01-01

The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

Quantum Computation by Optically Coupled Steady Atoms/Quantum-Dots Inside a Quantum Cavity

NASA Technical Reports Server (NTRS)

Pradhan, P.; Wang, K. L.; Roychowdhury, V. P.; Anantram, M. P.; Mor, T.; Saini, Subhash (Technical Monitor)

1999-01-01

We present a model for quantum computation using $n$ steady 3-level atoms kept inside a quantum cavity, or using $n$ quantum-dots (QDs) kept inside a quantum cavity. In this model one external laser is pointed towards all the atoms/QDs, and $n$ pairs of electrodes are addressing the atoms/QDs, so that each atom is addressed by one pair. The energy levels of each atom/QD are controlled by an external Stark field given to the atom/QD by its external pair of electrodes. Transition between two energy levels of an individual atom/ QD are controlled by the voltage on its electrodes, and by the external laser. Interactions between two atoms/ QDs are performed with the additional help of the cavity mode (using on-resonance condition). Laser frequency, cavity frequency, and energy levels are far off-resonance most of the time, and they are brought to the resonance (using the Stark effect) only at the time of operations. Steps for a controlled-NOT gate between any two atoms/QDs have been described for this model. Our model demands some challenging technological efforts, such as manufacturing single-electron QDs inside a cavity. However, it promises big advantages over other existing models which are currently implemented, and might enable a much easier scale-up, to compute with many more qubits.

Experimental Simulation of Active Control With On-line System Identification on Sound Transmission Through an Elastic Plate

NASA Technical Reports Server (NTRS)

1998-01-01

An adaptive control algorithm with on-line system identification capability has been developed. One of the great advantages of this scheme is that an additional system identification mechanism such as an additional uncorrelated random signal generator as the source of system identification is not required. A time-varying plate-cavity system is used to demonstrate the control performance of this algorithm. The time-varying system consists of a stainless-steel plate which is bolted down on a rigid cavity opening where the cavity depth was changed with respect to time. For a given externally located harmonic sound excitation, the system identification and the control are simultaneously executed to minimize the transmitted sound in the cavity. The control performance of the algorithm is examined for two cases. First, all the water was drained, the external disturbance frequency is swept with 1 Hz/sec. The result shows an excellent frequency tracking capability with cavity internal sound suppression of 40 dB. For the second case, the water level is initially empty and then raised to 3/20 full in 60 seconds while the external sound excitation is fixed with a frequency. Hence, the cavity resonant frequency decreases and passes the external sound excitation frequency. The algorithm shows 40 dB transmitted noise suppression without compromising the system identification tracking capability.

MURI Center for Photonic Quantum Information Systems

DTIC Science & Technology

2009-10-16

conversion; solid- state quantum gates based on quantum dots in semiconductors and on NV centers in diamond; quantum memories using optical storage...of our high-speed quantum cryptography systems, and also by continuing to work on quantum information encoding into transverse spatial modes. 14...make use of cavity QED effects for quantum information processing, the quantum dot needs to be addressed coherently . We have probed the QD-cavity

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Waveguide embedded plasmon laser with multiplexing and electrical modulation

DOEpatents

Ma, Ren-min; Zhang, Xiang

2017-08-29

This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

Valley-selective photon-dressed states in transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

LaMountain, Trevor; Chen, Yen-Jung; Stanev, Teodor K.; Stern, Nathaniel P.

2018-02-01

When electronic excitations in a semiconductor interact with light, the relevant quasiparticles are hybrid lightmatter dressed states, or exciton-polaritons. In monolayer transition metal dichalcogenides, a class of 2D direct bandgap semiconductors, optical excitations selectively populate distinct momentum valleys with correlated spin projection. The combination of this spin-valley locking with photon dressed states can lead to new optical phenomena in these materials. We present spectroscopic measurements of valley-specific exciton-polaritons in monolayer 2D materials in distinct regimes. When a monolayer is embedded in a dielectric microcavity, strong coupling exciton-polaritons are achieved. Cavity-modified dynamics of the dressed states are inferred from emission. Polarization persists up to room temperature in monolayer MoS2, in contrast with bare material. We also show that distinct regimes of valley-polarized exciton-polaritons can be accessed with microcavity engineering by tuning system parameters such as cavity decay rate and exciton-photon coupling strength. Further, we report results showing that polarization-sensitive ultrafast spectroscopy can enable sensitive measurements of the valley optical Stark shift, a light-induced dressed state energy shift, in monolayer semiconductors such as WSe2 and MoS2. These findings demonstrate distinct approaches to manipulating the picosecond dynamics of valleysensitive dressed states in monolayer semiconductors.

Microoptoelectromechanical systems-based external cavity quantum cascade lasers for real-time spectroscopy

NASA Astrophysics Data System (ADS)

Butschek, Lorenz; Hugger, Stefan; Jarvis, Jan; Haertelt, Marko; Merten, André; Schwarzenberg, Markus; Grahmann, Jan; Stothard, David; Warden, Matthew; Carson, Christopher; Macarthur, John; Fuchs, Frank; Ostendorf, Ralf; Wagner, Joachim

2018-01-01

We report on mid-IR spectroscopic measurements performed with rapidly tunable external cavity quantum cascade lasers (EC-QCLs). Fast wavelength tuning in the external cavity is realized by a microoptoelectromechanical systems (MOEMS) grating oscillating at a resonance frequency of about 1 kHz with a deflection amplitude of up to 10 deg. The entire spectral range of the broadband QCL can therefore be covered in just 500 μs, paving the way for real-time spectroscopy in the mid-IR region. In addition to its use in spectroscopic measurements conducted in backscattering and transmission geometry, the MOEMS-based laser source is characterized regarding pulse intensity noise, wavelength reproducibility, and spectral resolution.

Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy.

PubMed

Hildebrandt, Lars; Knispel, Richard; Stry, Sandra; Sacher, Joachim R; Schael, Frank

2003-04-20

Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an optical output power of up to 30 mW were observed after optimization of the external cavity. The linewidth was measured with a beterodyne technique, and 0.8 MHz at a sweep time of 50 ms was obtained. The mode-hop-free tuning range was more than 50 GHz. We demonstrated the performance of the laser by detecting the saturated absorption spectrum of atomic indium at 410 nm, allowing observation of well-resolved Lamb dips.

Effect of an external magnetic field on the mass attenuation coefficients of p-Si and n-Si

NASA Astrophysics Data System (ADS)

Yılmaz, D.; Önder, P.

2018-05-01

In this study, the mass attenuation coefficients of p-Si and n-Si semiconductor samples have been determined in an external magnetic field. The semiconductor samples were located to the external magnetic field of intensities 0.2 T, 0.4 T, 0.6 T and 0.8 T. The samples were bombarded by 59.5 keV, 80.1 keV, 121.8 keV and 244.7 keV gamma-rays emitted from Am241, Ba133 and Eu152 radioactive sources. The transmitted photons were detected by a CdTe detector. It was observed that the mass attenuation coefficients of p-Si and n-Si semiconductor samples decrease with increasing gamma-ray energy. Also, the mass attenuation coefficients of the samples increase with applying magnetic field intensity.

Linear induction accelerators made from pulse-line cavities with external pulse injection.

PubMed

Smith, I

1979-06-01

Two types of linear induction accelerator have been reported previously. In one, unidirectional voltage pulses are generated outside the accelerator and injected into the accelerator cavity modules, which contain ferromagnetic material to reduce energy losses in the form of currents induced, in parallel with the beam, in the cavity structure. In the other type, the accelerator cavity modules are themselves pulse-forming lines with energy storage and switches; parallel current losses are made zero by the use of circuits that generate bidirectional acceleration waveforms with a zero voltage-time integral. In a third type of design described here, the cavities are externally driven, and 100% efficient coupling of energy to the beam is obtained by designing the external pulse generators to produce bidirectional voltage waveforms with zero voltage-time integral. A design for such a pulse generator is described that is itself one hundred percent efficient and which is well suited to existing pulse power techniques. Two accelerator cavity designs are described that can couple the pulse from such a generator to the beam; one of these designs provides voltage doubling. Comparison is made between the accelerating gradients that can be obtained with this and the preceding types of induction accelerator.

Use of external nesting boxes by roosting red-cockaded woodpeckers

Treesearch

William E. Taylor; Robert G. Hooper

2004-01-01

Red-cockaded woodpeckers (Picoides borealis) roost year-round in cavities they excavate in living pine trees. Cavity excavation is a lengthy process (Conner and Rudolph 1995a) and sometimes a member of a family group does not have an available cavity for roosting within its resident cluster of cavity trees. Woodpeckers without a cavity either roost...

Visible Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-01-01

circular output beams are easily coupled into optical fibers, or focused or collimated with microlenslets. The VCSELs can be tested individually at the wafer...semiconductor visible VCSEL . Also shown is the DBR reflectance and reflectivity phase , as seen from the optical cavity, and the electric field intensity ...76 xv Figure page 2.32 Calculated electric field intensity for the example IR and visible VCSELs shown in Fig. 2.31 ........................... 79

Investigations of a Coherently Driven Semiconductor Optical Cavity QED System

DTIC Science & Technology

2008-09-30

A. Fiber taper waveguide coupling Two of the primary difficulties in performing resonant optical measurements on the microcavity-QD system are ef...with the predomi- nantly radially polarized cavity mode. As a result, we esti- mate that spatial misalignment is the primary cause for the reduced...Mode splitting circles and peak reflection value diamonds as a fuction of Pd and ncav. Theoretical predic- tions are shown as dashed lines

Vertical-Cavity Surface-Emitting Laser Diodes: Design, Growth, Mode Control and Integration by Fluidic Self-Assembly

NASA Astrophysics Data System (ADS)

Hadley, Mark Alfred

Some important problems to overcome in the design and fabrication of vertical-cavity surface-emitting laser diodes (VCSELs) are: narrow design tolerances, molecular beam epitaxy growth control and multiple transverse modes. This dissertation addresses each of these problems. First, optical, electrical and thermal design issues are discussed in detail. Second, a new growth method using the thermal emission from the substrate during growth is described which is used to accurately control the growth of multilayer structures. The third problem addressed is that of multiple transverse modes. For many applications it is desirable for a VCSEL to lase in the lowest-order transverse mode. In most structures, this only occurs at low powers. It is shown that an external cavity can be used to force a VCSEL to lase in a single transverse mode at all power levels. A new type of VCSEL, grown on a p-doped substrate in order to increase injection uniformity, is designed specifically for use in an external cavity. There are two types of external cavities used to control modes: a long external "macro-cavity" and a short external "micro-cavity." These external cavities have been used to obtain peak powers of over 100 mW while remaining in the fundamental mode under pulsed operation. Finally, a more general topic is researched. This topic, called fluidic self-assembly (FSA), is a new integration technique that can be used not only to integrate VCSELs on a separate substrate, but to integrate many different material systems and devices together on the same substrate. The basic concept of FSA is to make a large number of objects of a particular shape. On a separate substrate, holes that match the shape of the objects are also fabricated. By placing the substrate in an inert fluid containing the objects, and recirculating the fluid and the objects over the substrate, it is possible to fill the holes with correctly oriented objects. Results of a FSA study are reported in which 100% fill factors are obtained. Specifically, FSA was used to assemble two different sizes of silicon blocks into holes in a silicon substrate. Fabrication techniques as well as FSA results are included.

Electron gas grid semiconductor radiation detectors

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

DTIC Science & Technology

2013-01-01

resonant modulation of semiconductor lasers beyond relaxation oscillation frequency,” Appl. Phys. Lett., 63, 1459–1461 (1993). [26] J. Helms and K. Petermann ...5, 4–6 (1993). [28] K. Petermann , “External optical feedback phenomena in semiconductor lasers,” IEEE J. Sel. Top. Quantum Elec- tron., 1, 480–489

Call for Papers: Cavity QED

NASA Astrophysics Data System (ADS)

Lange, W.; Gerard, J.-M.

2003-06-01

Cavity QED interactions of light and matter have been investigated in a wide range of systems covering the spectrum from microwaves to optical frequencies, using media as diverse as single atoms and semiconductors. Impressive progress has been achieved technologically as well as conceptually. This topical issue of Journal of Optics B: Quantum and Semiclassical Optics is intended to provide a comprehensive account of the current state of the art of cavity QED by uniting contributions from researchers active across this field. As Guest Editors of this topical issue, we invite manuscripts on current theoretical and experimental work on any aspects of cavity QED. The topics to be covered will include, but are not limited to: bulletCavity QED in optical microcavities bulletSemiconductor cavity QED bulletQuantum dot cavity QED bulletRydberg atoms in microwave cavities bulletPhotonic crystal cavity QED bulletMicrosphere resonators bulletMicrolasers and micromasers bulletMicrodroplets bulletDielectric cavity QED bulletCavity QED-based quantum information processing bulletQuantum state engineering in cavities The DEADLINE for submission of contributions is 31 July 2003 to allow the topical issue to appear in about February 2004. All papers will be peer-reviewed in accordance with the normal refereeing procedures and standards of Journal of Optics B: Quantum and Semiclassical Optics. Advice on publishing your work in the journal may be found at www.iop.org/journals/authors/jopb. Submissions should ideally be in either standard LaTeX form or Microsoft Word. There are no page charges for publication. In addition to the usual 50 free reprints, the corresponding author of each paper published will receive a complimentary copy of the topical issue. Contributions to the topical issue should if possible be submitted electronically at www.iop.org/journals/jopb. or by e-mail to jopb@iop.org. Authors unable to submit online or by e-mail may send hard copy contributions (enclosing the electronic code) to: Dr Claire Bedrock (Publisher), Journal of Optics B: Quantum and Semiclassical Optics, Institute of Physics Publishing, Dirac House, Temple Back, Bristol BS1 6BE, UK. All contributions should be accompanied by a readme file or covering letter, quoting `JOPB topical issue - Cavity QED', giving the postal and e-mail addresses for correspondence. Any subsequent change of address should be notified to the publishing office. We look forward to receiving your contribution to this topical issue.

Time-dynamics of the two-color emission from vertical-external-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Chernikov, A.; Wichmann, M.; Shakfa, M. K.; Scheller, M.; Moloney, J. V.; Koch, S. W.; Koch, M.

2012-01-01

The temporal stability of a two-color vertical-external-cavity surface-emitting laser is studied using single-shot streak-camera measurements. The collected data is evaluated via quantitative statistical analysis schemes. Dynamically stable and unstable regions for the two-color operation are identified and the dependence on the pump conditions is analyzed.

Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason M.

2015-02-08

We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 µm) at a 10 Hz repetition rate.

External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

NASA Astrophysics Data System (ADS)

Wang, Meng; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Lu, Ming; Stein, Aaron; Belenky, Gregory

2018-01-01

The external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25 μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25 μm corresponding to ˜25 meV of tuning range.

External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

DOE PAGES

Wang, Meng; Hosoda, Takashi; Shterengas, Leon; ...

2017-09-14

Here, the external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25 μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25 μm corresponding to ~25 meV of tuning range.

Frequency response control of semiconductor laser by using hybrid modulation scheme.

PubMed

Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

2016-10-31

A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5°. Consequently high efficiency high brightness arrays of micro-LEDs becomes possible. For single emitters the approach is particularly interesting for oscillator strength engineering allowing high speed data transmission and for single photonics applying single quantum dot (QD) emitters and allowing >90% coupling of the emission into single mode fiber. We also note that for longer wavelength ( 1300nm) QDs the thickness of the layers and surface patterns significantly increase allowing greatly reduced processing tolerances and applying further simplifications due to the possibility of using high contrast GaAs-AlOx DBRs.

Electro-optic harmonic conversion to switch a laser beam out of a cavity

DOEpatents

Haas, Roger A.; Henesian, Mark A.

1987-01-01

The invention is a switch to permit a laser beam to escape a laser cavity through the use of an externally applied electric field across a harmonic conversion crystal. Amplification takes place in the laser cavity, and then the laser beam is switched out by the laser light being harmonically converted with dichroic or polarization sensitive elements present to alter the optical path of the harmonically converted laser light. Modulation of the laser beam can also be accomplished by varying the external electric field.

External cavity diode laser-based detection of trace gases with NICE-OHMS using current modulation.

PubMed

Centeno, R; Mandon, J; Cristescu, S M; Axner, O; Harren, F J M

2015-03-09

We combine an external cavity diode laser with noise-immune cavity-enhanced optical heterodyne molecular spectroscopy (NICE-OHMS) using current modulation. With a finesse of 1600, we demonstrate noise equivalent absorption sensitivities of 4.1 x 10(-10) cm(-1) Hz(-1/2), resulting in sub-ppbv detection limits for Doppler-broadened transitions of CH(4) at 6132.3 cm(-1), C(2)H(2) at 6578.5 cm(-1) and HCN at 6541.7 cm(-1). The system is used for hydrogen cyanide detection from sweet almonds.

A comparison of patterns of disease extension in keratosis obturans and external auditory canal cholesteatoma.

PubMed

Shinnabe, Akihiro; Hara, Mariko; Hasegawa, Masayo; Matsuzawa, Shingo; Kanazawa, Hiromi; Yoshida, Naohiro; Iino, Yukiko

2013-01-01

To investigate the different pathways of progression to the middle ear in keratosis obturans (KO) and external auditory canal cholesteatoma (EACC). Retrospective case review. Referral hospital otolaryngology department. Patients with KO or EACC and middle ear disease who underwent surgical management were included. Four ears of 4 patients (mean age, 41.25 yr) were the KO group, and 5 ears of 4 patients (mean age, 49.5 yr) were the EACC group. Intraoperative findings of the middle ear cavity were investigated in KO and EACC groups. In the KO group, 3 patients had a perforated tympanic membrane and cholesteatoma in the tympanic cavity. The other patient had preoperative right facial palsy. Removal of the keratin plug revealed an adherent tympanic membrane. In intraoperative findings, the tympanic segment of the fallopian canal was found to be eroded because of inflammation. No case initially progressed to the mastoid cavity. Four patients had external auditory canal cholesteatoma with middle ear disease. In EACC group, all patients had initial progression to the mastoid cavity. KO tends to progress initially to the tympanic cavity via a diseased tympanic membrane. EACC tends to progress to the mastoid cavity via destruction of the posterior bony canal. This is the first report to investigate differences in pathway of progression to the middle ear cavity in these 2 diseases.

Semi-monolithic cavity for external resonant frequency doubling and method of performing the same

NASA Technical Reports Server (NTRS)

Hemmati, Hamid (Inventor)

1999-01-01

The fabrication of an optical cavity for use in a laser, in a frequency doubling external cavity, or any other type of nonlinear optical device, can be simplified by providing the nonlinear crystal in combination with a surrounding glass having an index of refraction substantially equal to that of the nonlinear crystal. The closed optical path in this cavity is formed in the surrounding glass and through the nonlinear crystal which lies in one of the optical segments of the light path. The light is transmitted through interfaces between the surrounding glass in the nonlinear crystal through interfaces which are formed at the Brewster-angle to minimize or eliminate reflection.

Continuous wave room temperature external ring cavity quantum cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Revin, D. G., E-mail: d.revin@sheffield.ac.uk; Hemingway, M.; Vaitiekus, D.

2015-06-29

An external ring cavity quantum cascade laser operating at ∼5.2 μm wavelength in a continuous-wave regime at the temperature of 15 °C is demonstrated. Out-coupled continuous-wave optical powers of up to 23 mW are observed for light of one propagation direction with an estimated total intra-cavity optical power flux in excess of 340 mW. The uni-directional regime characterized by the intensity ratio of more than 60 for the light propagating in the opposite directions was achieved. A single emission peak wavelength tuning range of 90 cm{sup −1} is realized by the incorporation of a diffraction grating into the cavity.

NMR apparatus for in situ analysis of fuel cells

DOEpatents

Gerald, II, Rex E; Rathke, Jerome W

2012-11-13

The subject apparatus is a fuel cell toroid cavity detector for in situ analysis of samples through the use of nuclear magnetic resonance. The toroid cavity detector comprises a gas-tight housing forming a toroid cavity where the housing is exposed to an externally applied magnetic field B.sub.0 and contains fuel cell component samples to be analyzed. An NMR spectrometer is electrically coupled and applies a radiofrequency excitation signal pulse to the detector to produce a radiofrequency magnetic field B.sub.1 in the samples and in the toroid cavity. Embedded coils modulate the static external magnetic field to provide a means for spatial selection of the recorded NMR signals.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Tailoring light-matter coupling in semiconductor and hybrid-plasmonic nanowires

PubMed Central

Piccione, Brian; Aspetti, Carlos O.; Cho, Chang-Hee; Agarwal, Ritesh

2014-01-01

Understanding interactions between light and matter is central to many fields, providing invaluable insights into the nature of matter. In its own right, a greater understanding of light-matter coupling has allowed for the creation of tailored applications, resulting in a variety of devices such as lasers, switches, sensors, modulators, and detectors. Reduction of optical mode volume is crucial to enhancing light-matter coupling strength, and among solid-state systems, self-assembled semiconductor and hybrid-plasmonic nanowires are amenable to creation of highly-confined optical modes. Following development of unique spectroscopic techniques designed for the nanowire morphology, carefully engineered semiconductor nanowire cavities have recently been tailored to enhance light-matter coupling strength in a manner previously seen in optical microcavities. Much smaller mode volumes in tailored hybrid-plasmonic nanowires have recently allowed for similar breakthroughs, resulting in sub-picosecond excited-state lifetimes and exceptionally high radiative rate enhancement. Here, we review literature on light-matter interactions in semiconductor and hybrid-plasmonic monolithic nanowire optical cavities to highlight recent progress made in tailoring light-matter coupling strengths. Beginning with a discussion of relevant concepts from optical physics, we will discuss how our knowledge of light-matter coupling has evolved with our ability to produce ever-shrinking optical mode volumes, shifting focus from bulk materials to optical microcavities, before moving on to recent results obtained from semiconducting nanowires. PMID:25093385

Ultrashort, high power, and ultralow noise mode-locked optical pulse generation using quantum-dot semiconductor lasers

NASA Astrophysics Data System (ADS)

Choi, Myoung-Taek

This dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section devices. Short pulse generation from an external cavity mode-locked QD two-section diode laser is studied. High quality, sub-picosecond (960 fs), high peak power (1.2 W) pulse trains are obtained. The sign and magnitude of pulse chirp were measured for the first time. The role of the self-phase modulation and the linewidth enhancement factor in QD mode-locked lasers is addressed. The noise performance of two-section mode-locked lasers and a SOA-based ring laser was investigated. Significant reduction of the timing jitter under hybrid mode-locked operation was achieved owing to more than one order of magnitude reduction of the linewidth in QD gain media. Ultralow phase noise performance (integrated timing jitter of a few fs at a 10 GHz repetition rate) was demonstrated from an actively mode-locked unidirectional ring laser. These results show that quantum dot mode-locked lasers are strong competitors to conventional semiconductor lasers in noise performance. Finally we demonstrated an opto-electronic oscillator (OEO) and coupled opto-electronic oscillators (COEO) which have the potential for both high purity microwave and low noise optical pulse generation. The phase noise of the COEO is measured by the photonic delay line frequency discriminator method. Based on this study we discuss the prospects of the COEO as a low noise optical pulse source.

3D-CFD analysis of diffusion and emission of VOCs in a FLEC cavity.

PubMed

Zhu, Q; Kato, S; Murakami, S; Ito, K

2007-06-01

This study is performed as a part of research that examines the emission and diffusion characteristics of volatile organic compounds (VOCs) from indoor building materials. In this paper, the flow field and the emission field of VOCs from the surface of building materials in a Field and Laboratory Emission Cell (FLEC) cavity are examined by 3D Computational Fluid Dynamics (CFD) analysis. The flow field within the FLEC cavity is laminar. With a total flow of 250 ml/min, the air velocity near the test material surface ranges from 0.1 to 4.5 cm/s. Three types of emission from building materials are studied here: (i) emission phenomena controlled by internal diffusion, (ii) emission phenomena controlled by external diffusion, and (iii) emission phenomena controlled by mixed diffusion (internal + external diffusion). In the case of internal diffusion material, with respect to the concentration distribution in the cavity, the local VOC emission rate becomes uniform and the FLEC works well. However, in the case of evaporation type (external diffusion) material, or mixed type materials (internal + external diffusion) when the resistance to transporting VOCs in the material is small, the FLEC is not suitable for emission testing because of the thin FLEC cavity. In this case, the mean emission rate is restricted to a small value, since the VOC concentration in the cavity rises to the same value as the surface concentration through molecular diffusion within the thin cavity, and the concentration gradient normal to the surface becomes small. The diffusion field and emission rate depend on the cavity concentration and on the Loading Factor. That is, when the testing material surface in the cavity is partially sealed to decrease the Loading Factor, the emission rate become higher with the decrease in the exposed area of the testing material. The flow field and diffusion field within the FLEC cavity are investigated by CFD method. After presenting a summary of the velocity distributed over the surface of test material and the emission properties of different type materials in FLEC, the paper pointed out that there is a bias in the airflow inside the FLEC cavity but do not influence the result of test emission rate, and the FLEC method is unsuitable for evaporation type materials in which the mass transfer of the surface controls the emission rate.

Optoelectronic forces with quantum wells for cavity optomechanics in GaAs/AlAs semiconductor microcavities

NASA Astrophysics Data System (ADS)

Villafañe, V.; Sesin, P.; Soubelet, P.; Anguiano, S.; Bruchhausen, A. E.; Rozas, G.; Carbonell, C. Gomez; Lemaître, A.; Fainstein, A.

2018-05-01

Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, nonlinearities, and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20-GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated with the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.

Automated assembly of VECSEL components

NASA Astrophysics Data System (ADS)

Brecher, C.; Pyschny, N.; Haag, S.; Mueller, T.

2013-02-01

Due to the architectural advantage of an external cavity architecture that enables the integration of additional elements into the cavity (e.g. for mode control, frequency conversion, wavelength tuning or passive mode-locking) VECSELs are a rapidly developing laser technology. Nevertheless they often have to compete with direct (edge) emitting laser diodes which can have significant cost advantages thanks to their rather simple structure and production processes. One way to compensate the economical disadvantages of VECSELs is to optimize each component in terms of quality and costs and to apply more efficient (batch) production processes. In this context, the paper presents recent process developments for the automated assembly of VECSELs using a new type of desktop assembly station with an ultra-precise micromanipulator. The core concept is to create a dedicated process development environment from which implemented processes can be transferred fluently to production equipment. By now two types of processes have been put into operation on the desktop assembly station: 1.) passive alignment of the pump optics implementing a camera-based alignment process, where the pump spot geometry and position on the semiconductor chip is analyzed and evaluated; 2.) active alignment of the end mirror based on output power measurements and optimization algorithms. In addition to the core concept and corresponding hardware and software developments, detailed results of both processes are presented explaining measurement setups as well as alignment strategies and results.

Excess spontaneous emission in non-Hermitian optical systems. I. Laser amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siegman, A.E.

1989-02-01

Petermann first predicted in 1979 the existence of an excess-spontaneous-emission factor in gain-guided semiconductor lasers. We show that an excess spontaneous emission of this type, and also a correlation between the spontaneous emission into different cavity modes, will in fact be present in all open-sided laser resonators or optical lens guides. These properties arise from the non-self-adjoint or non-power-orthogonal nature of the optical resonator modes. The spontaneous-emission rate is only slightly enhanced in stable-resonator or index-guided structures, but can become very much larger than normal in gain-guided or geometrically unstable structures. Optical resonators or lens guides that have an excessmore » noise emission necessarily also exhibit an ''excess initial-mode excitation factor'' for externally injected signals. As a result, the excess spontaneous emission can be balanced out and the usual quantum-noise limit recovered in laser amplifiers and in injection-seeded laser oscillators, but not in free-running laser oscillators.« less

Broadly tunable terahertz generation in mid-infrared quantum cascade lasers.

PubMed

Vijayraghavan, Karun; Jiang, Yifan; Jang, Min; Jiang, Aiting; Choutagunta, Karthik; Vizbaras, Augustinas; Demmerle, Frederic; Boehm, Gerhard; Amann, Markus C; Belkin, Mikhail A

2013-01-01

Room temperature, broadly tunable, electrically pumped semiconductor sources in the terahertz spectral range, similar in operation simplicity to diode lasers, are highly desired for applications. An emerging technology in this area are sources based on intracavity difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers. Here we report terahertz quantum cascade laser sources based on an optimized non-collinear Cherenkov difference-frequency generation scheme that demonstrates dramatic improvements in performance. Devices emitting at 4 THz display a mid-infrared-to-terahertz conversion efficiency in excess of 0.6 mW W(-2) and provide nearly 0.12 mW of peak power output. Devices emitting at 2 and 3 THz fabricated on the same chip display 0.09 and 0.4 mW W(-2) conversion efficiencies at room temperature, respectively. High terahertz-generation efficiency and relaxed phase-matching conditions offered by the Cherenkov scheme allowed us to demonstrate, for the first time, an external-cavity terahertz quantum cascade laser source tunable between 1.70 and 5.25 THz.

Model for a pulsed terahertz quantum cascade laser under optical feedback.

PubMed

Agnew, Gary; Grier, Andrew; Taimre, Thomas; Lim, Yah Leng; Bertling, Karl; Ikonić, Zoran; Valavanis, Alexander; Dean, Paul; Cooper, Jonathan; Khanna, Suraj P; Lachab, Mohammad; Linfield, Edmund H; Davies, A Giles; Harrison, Paul; Indjin, Dragan; Rakić, Aleksandar D

2016-09-05

Optical feedback effects in lasers may be useful or problematic, depending on the type of application. When semiconductor lasers are operated using pulsed-mode excitation, their behavior under optical feedback depends on the electronic and thermal characteristics of the laser, as well as the nature of the external cavity. Predicting the behavior of a laser under both optical feedback and pulsed operation therefore requires a detailed model that includes laser-specific thermal and electronic characteristics. In this paper we introduce such a model for an exemplar bound-to-continuum terahertz frequency quantum cascade laser (QCL), illustrating its use in a selection of pulsed operation scenarios. Our results demonstrate significant interplay between electro-optical, thermal, and feedback phenomena, and that this interplay is key to understanding QCL behavior in pulsed applications. Further, our results suggest that for many types of QCL in interferometric applications, thermal modulation via low duty cycle pulsed operation would be an alternative to commonly used adiabatic modulation.

Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling

NASA Astrophysics Data System (ADS)

Tiira, Jonna; Radevici, Ivan; Haggren, Tuomas; Hakkarainen, Teemu; Kivisaari, Pyry; Lyytikäinen, Jari; Aho, Arto; Tukiainen, Antti; Guina, Mircea; Oksanen, Jani

2017-02-01

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV- measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.

Mode locking of a ring cavity semiconductor diode laser

NASA Astrophysics Data System (ADS)

Desbiens, Louis; Yesayan, Ararat; Piche, Michel

2000-12-01

We report new results on the generation and characterization of picosecond pulses from a self-mode-locked semiconductor diode laser. The active medium (InGaAs, 830-870 nm) is a semiconductor optical amplifier whose facets are cut at angle and AR coated. The amplifier is inserted in a three-minor ring cavity. Mode locking is purely passive; it takes place for specific alignment conditions. Trains of counterpropagating pulses are produced, with pulse duration varying from 1 .2 to 2 ps. The spectra of the counterpropagatmg pulses do not fully overlap; their central wavelengths differ by a few nm. The pulse repetition rate has been varied from 0.3 to 3 GHz. The pulses have been compressed to less than 500-fs duration with a grating pair. We discuss some of the potential physical mechanisms that could be involved in the dynamics of the mode-locked regime. Hysteresis in the LI curve has been observed. To characterize the pulses, we introduce the idea of a Pulse Quality Factor, where the pulse duration and spectral width are calculated from the second-order moments of the measured intensity autocorrelation and power spectral density.

Injection Locking of a Semiconductor Double Quantum Dot Micromaser

PubMed Central

Liu, Y.-Y.; Stehlik, J.; Gullans, M. J.; Taylor, J. M.; Petta, J. R.

2016-01-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models. PMID:28127226

Injection Locking of a Semiconductor Double Quantum Dot Micromaser.

PubMed

Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R

2015-11-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

Chemical-mechanical polishing of recessed microelectromechanical devices

DOEpatents

Barron, Carole C.; Hetherington, Dale L.; Montague, Stephen

1999-01-01

A method is disclosed for micromachining recessed layers (e.g. sacrificial layers) of a microelectromechanical system (MEMS) device formed in a cavity etched into a semiconductor substrate. The method uses chemical-mechanical polishing (CMP) with a resilient polishing pad to locally planarize one or more of the recessed layers within the substrate cavity. Such local planarization using the method of the present invention is advantageous for improving the patterning of subsequently deposited layers, for eliminating mechanical interferences between functional elements (e.g. linkages) of the MEMS device, and for eliminating the formation of stringers. After the local planarization of one or more of the recessed layers, another CMP step can be provided for globally planarizing the semiconductor substrate to form a recessed MEMS device which can be integrated with electronic circuitry (e.g. CMOS, BiCMOS or bipolar circuitry) formed on the surface of the substrate.

Chemical-mechanical polishing of recessed microelectromechanical devices

DOEpatents

Barron, C.C.; Hetherington, D.L.; Montague, S.

1999-07-06

A method is disclosed for micromachining recessed layers (e.g. sacrificial layers) of a microelectromechanical system (MEMS) device formed in a cavity etched into a semiconductor substrate. The method uses chemical-mechanical polishing (CMP) with a resilient polishing pad to locally planarize one or more of the recessed layers within the substrate cavity. Such local planarization using the method of the present invention is advantageous for improving the patterning of subsequently deposited layers, for eliminating mechanical interferences between functional elements (e.g. linkages) of the MEMS device, and for eliminating the formation of stringers. After the local planarization of one or more of the recessed layers, another CMP step can be provided for globally planarizing the semiconductor substrate to form a recessed MEMS device which can be integrated with electronic circuitry (e.g., CMOS, BiCMOS or bipolar circuitry) formed on the surface of the substrate. 23 figs.

Fabrication and room temperature operation of semiconductor nano-ring lasers using a general applicable membrane transfer method

NASA Astrophysics Data System (ADS)

Fan, Fan; Yu, Yueyang; Amiri, Seyed Ebrahim Hashemi; Quandt, David; Bimberg, Dieter; Ning, C. Z.

2017-04-01

Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ03 (λ0 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.

Optoelectronics Research Center

DTIC Science & Technology

1992-05-16

dot structures in Si and related materials. External cavity operation of diode lasers has provided a wealth of information on internal device physics...new class of optical information processing. A major feature of the AFOSR OERC has been interactions with the Air Force Phillips Laboratory and with...structures in Si and related materials. External cavity operation of diode lasers has provided a wealth of information on internal device physics and

Probing different regimes of strong field light-matter interaction with semiconductor quantum dots and few cavity photons

NASA Astrophysics Data System (ADS)

Hargart, F.; Roy-Choudhury, K.; John, T.; Portalupi, S. L.; Schneider, C.; Höfling, S.; Kamp, M.; Hughes, S.; Michler, P.

2016-12-01

In this work we present an extensive experimental and theoretical investigation of different regimes of strong field light-matter interaction for cavity-driven quantum dot (QD) cavity systems. The electric field enhancement inside a high-Q micropillar cavity facilitates exceptionally strong interaction with few cavity photons, enabling the simultaneous investigation for a wide range of QD-laser detuning. In case of a resonant drive, the formation of dressed states and a Mollow triplet sideband splitting of up to 45 μeV is measured for a mean cavity photon number < {n}c> ≤slant 1. In the asymptotic limit of the linear AC Stark effect we systematically investigate the power and detuning dependence of more than 400 QDs. Some QD-cavity systems exhibit an unexpected anomalous Stark shift, which can be explained by an extended dressed 4-level QD model. We provide a detailed analysis of the QD-cavity systems properties enabling this novel effect. The experimental results are successfully reproduced using a polaron master equation approach for the QD-cavity system, which includes the driving laser field, exciton-cavity and exciton-phonon interactions.

Energy and technology review: Engineering modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabayan, H.S.; Goudreau, G.L.; Ziolkowski, R.W.

1986-10-01

This report presents information concerning: Modeling Canonical Problems in Electromagnetic Coupling Through Apertures; Finite-Element Codes for Computing Electrostatic Fields; Finite-Element Modeling of Electromagnetic Phenomena; Modeling Microwave-Pulse Compression in a Resonant Cavity; Lagrangian Finite-Element Analysis of Penetration Mechanics; Crashworthiness Engineering; Computer Modeling of Metal-Forming Processes; Thermal-Mechanical Modeling of Tungsten Arc Welding; Modeling Air Breakdown Induced by Electromagnetic Fields; Iterative Techniques for Solving Boltzmann's Equations for p-Type Semiconductors; Semiconductor Modeling; and Improved Numerical-Solution Techniques in Large-Scale Stress Analysis.

Infrared laser spectroscopic trace gas sensing

NASA Astrophysics Data System (ADS)

Sigrist, Markus

2016-04-01

Chemical sensing and analyses of gas samples by laser spectroscopic methods are attractive owing to several advantages such as high sensitivity and specificity, large dynamic range, multi-component capability, and lack of pretreatment or preconcentration procedures. The preferred wavelength range comprises the fundamental molecular absorption range in the mid-infared between 3 and 15 μm, whereas the near-infrared range covers the (10-100 times weaker) higher harmonics and combination bands. The availability of near-infrared and, particularly, of broadly tunable mid-infrared sources like external cavity quantum cascade lasers (EC-QCLs), interband cascade lasers (ICLs), difference frequency generation (DFG), optical parametric oscillators (OPOs), recent developments of diode-pumped lead salt semiconductor lasers, of supercontinuum sources or of frequency combs have eased the implementation of laser-based sensing devices. Sensitive techniques for molecular absorption measurements include multipass absorption, various configurations of cavity-enhanced techniques such as cavity ringdown (CRD), or of photoacoustic spectroscopy (PAS) including quartz-enhanced (QEPAS) or cantilever-enhanced (CEPAS) techniques. The application requirements finally determine the optimum selection of laser source and detection scheme. In this tutorial talk I shall discuss the basic principles, present various experimental setups and illustrate the performance of selected systems for chemical sensing of selected key atmospheric species. Applications include an early example of continuous vehicle emission measurements with a mobile CO2-laser PAS system [1]. The fast analysis of C1-C4 alkanes at sub-ppm concentrations in gas mixtures is of great interest for the petrochemical industry and was recently achieved with a new type of mid-infrared diode-pumped piezoelectrically tuned lead salt vertical external cavity surface emitting laser (VECSEL) [2]. Another example concerns measurements on short-lived species like nitrous acid (HONO) with a QCL-based QEPAS system where the small gas sampling volume and hence short gas residence time are of particular importance [3]. A true analysis of gas mixtures has been performed with a widely tunable DFG system in a medical application that could also be adapted to atmospheric species [4]. It is demonstrated that a laser-based narrowband system with broad tunability combined with an appropriate detection scheme is feasible for the chemical analysis of multi-component gas mixtures even with an a priori unknown composition. Most recent examples will further confirm the great potential of infrared laser-based devices for trace species sensing. References 1. D. Marinov and M.W. Sigrist: "Monitoring of road-traffic emission with mobile photoacoustic system", Photochem. and Photobiol. Sciences 2, 774-778 (2003) 2. J.M. Rey, M. Fill, F. Felder and M.W. Sigrist: "Broadly tunable mid-infrared VECSEL for multiple components hydrocarbons gas sensing", Appl. Phys. B 117, 935-939 (2014) 3. H. Yi, R. Maamary, X. Gao, M.W. Sigrist, E. Fertein, and W. Chen: "Short-lived species detection of nitrous acid by external-cavity quantum cascade laser based quartz-enhanced photoacoustic absorption spectroscopy", Appl. Phys. Lett. 106, 101109 (2015) 4. M. Gianella and M.W. Sigrist: "Chemical Analysis of Surgical Smoke by Infrared Laser Spectroscopy", Appl. Phys. B 109, 485-496 (2012)

Efficiency of different methods of extra-cavity second harmonic generation of continuous wave single-frequency radiation.

PubMed

Khripunov, Sergey; Kobtsev, Sergey; Radnatarov, Daba

2016-01-20

This work presents for the first time to the best of our knowledge a comparative efficiency analysis among various techniques of extra-cavity second harmonic generation (SHG) of continuous-wave single-frequency radiation in nonperiodically poled nonlinear crystals within a broad range of power levels. Efficiency of nonlinear radiation transformation at powers from 1 W to 10 kW was studied in three different configurations: with an external power-enhancement cavity and without the cavity in the case of single and double radiation pass through a nonlinear crystal. It is demonstrated that at power levels exceeding 1 kW, the efficiencies of methods with and without external power-enhancement cavities become comparable, whereas at even higher powers, SHG by a single or double pass through a nonlinear crystal becomes preferable because of the relatively high efficiency of nonlinear transformation and fairly simple implementation.

Practical Design and Applications of Ultrafast Semiconductor Disk Lasers

NASA Astrophysics Data System (ADS)

Baker, Caleb W.

Vertical External Cavity Surface Emitting Lasers (VECSELs) have become well established in recent years for their design flexibility and promising power scalability. Recent efforts in VECSEL development have focused heavily on expanding the medium into the ultrafast regime of modelocked operation. Presented in this thesis is a detailed discussion regarding the development of ultrafast VECSEL devices. Achievements in continuous wave (CW) operation will be highlighted, followed by several chapters detailing the engineering challenges and design solutions which enable modelocked operation of VECSELs in the ultrafast regime, including the design of the saturable absorbers used to enforce modelocking, management of the net group delay dispersion (GDD) inside the cavity, and the design of the active region to support pulse durations on the order of 100 fs. Work involving specific applications - VECSELs emitting on multiple wavelengths simultaneously and the use of VECSEL seed oscillators for amplification and spectral broadening - will also be presented. Key experimental results will include a novel multi-fold cavity design that produced record-setting peak powers of 6.3 kW from a modelocked VECSEL, an octave-spanning supercontinuum with an average power of 2 W generated using a VECSEL seed and a 2-stage Yb fiber amplifier, and two separate experiments where a VECSEL was made to emit on multiple wavelengths simultaneously in modelocked and highly stable CW operation, respectively. Further, many diagnostic and characterization measurements will be presented, most notably the in-situ probing of a VECSEL gain medium during stable modelocked operation with temporal resolution on the order of 100 fs, but also including characterization of the relaxation rates in different saturable absorber designs and the effectiveness of different methods for managing the net GDD of a device.

Visible light surface emitting semiconductor laser

DOEpatents

Olbright, Gregory R.; Jewell, Jack L.

1993-01-01

A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

A DPL model of photo-thermal interaction in an infinite semiconductor material containing a spherical hole

NASA Astrophysics Data System (ADS)

Hobiny, Aatef D.; Abbas, Ibrahim A.

2018-01-01

The dual phase lag (DPL) heat transfer model is applied to study the photo-thermal interaction in an infinite semiconductor medium containing a spherical hole. The inner surface of the cavity was traction free and loaded thermally by pulse heat flux. By using the eigenvalue approach methodology and Laplace's transform, the physical variable solutions are obtained analytically. The numerical computations for the silicon-like semiconductor material are obtained. The comparison among the theories, i.e., dual phase lag (DPL), Lord and Shulman's (LS) and the classically coupled thermoelastic (CT) theory is presented graphically. The results further show that the analytical scheme can overcome mathematical problems by analyzing these problems.

Ballistic transport in nanowires through non-magnetic or magnetic cavity

NASA Astrophysics Data System (ADS)

Nonoyama, Shinji; Honma, Yukari; Ono, Miyuki; Nakamura, Atsunobu

2015-07-01

Ballistic transport phenomena through a region containing a cavity in a quasi-one-dimensional quantum nanowire are investigated. Conductance curves calculated as a function of a structural parameter show quantum interference effects on transport clearly. In a special geometry, very narrow periodic dips, which are attributable to the anti-resonance, appear on the conductance curve. The nature of the virtual bound state resulting in the anti-resonance is studied in detail. Electron conductions through a small dilute magnetic semiconductor are also investigated.

Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators

NASA Astrophysics Data System (ADS)

Javerzac-Galy, Clément; Kumar, Anshuman; Schilling, Ryan D.; Piro, Nicolas; Khorasani, Sina; Barbone, Matteo; Goykhman, Ilya; Khurgin, Jacob B.; Ferrari, Andrea C.; Kippenberg, Tobias J.

2018-05-01

We present quantum yield measurements of single layer $\\textrm{WSe}_2$ (1L-$\\textrm{WSe}_2$) integrated with high-Q ($Q>10^6$) optical microdisk cavities, using an efficient ($\\eta>$90%) near-field coupling scheme based on a tapered optical fiber. Coupling of the excitonic emission is achieved by placing 1L-WSe$_2$ to the evanescent cavity field. This preserves the microresonator high intrinsic quality factor ($Q>10^6$) below the bandgap of 1L-WSe$_2$. The nonlinear excitation power dependence of the cavity quantum yield is in agreement with an exciton-exciton annihilation model. The cavity quantum yield is $\\textrm{QY}_\\textrm{c}\\sim10^{-3}$, consistent with operation in the \\textit{broad emitter} regime (i.e. the emission lifetime of 1L-WSe$_2$ is significantly shorter than the bare cavity decay time). This scheme can serve as a precise measurement tool for the excitonic emission of layered materials into cavity modes, for both in plane and out of plane excitation.

Integrated Photonic Orbital Angular Momentum Multiplexing and Demultiplexing on Chip

DTIC Science & Technology

2014-10-31

OAM free space coherent communication link testbed. ECL: external cavity laser . EDFA: erbium-doped fiber amplifier. PC: polarization controller. ATT...wave (cw) laser centered at 1540 nm, followed by an erbium-doped fiber amplifier (EDFA), an I/Q modulator, and another EDFA. The I/Q modulator was...communication link testbed. ECL: external cavity laser . EDFA: erbium-doped fiber amplifier. PC: polarization controller. ATT: attenuator. BPF: bandpass filter

Quantum Cascade Laser Tuning by Digital Micromirror Array-controlled External Cavity

DTIC Science & Technology

2014-01-01

P. Vujkovic-Cvijin, B. Gregor, A. C. Samuels, E. S. Roese, Quantum cascade laser tuning by digital micromirror array-controlled external cavity...REPORT TYPE 3. DATES COVERED 00-00-2014 to 00-00-2014 4. TITLE AND SUBTITLE Quantum cascade laser tuning by digital micromirror array-controlled...dimensional digital micromirror array (DMA) is described. The laser is tuned by modulating the reflectivity of DMA micromirror pixels under computer

Turbine blade with tuned damping structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Christian X.; Messmann, Stephen J.

2015-09-01

A turbine blade is provided comprising: a root; an airfoil comprising an external wall extending radially from the root and having a radially outermost portion; and a damping structure. The external wall may comprise first and second side walls joined together to define an inner cavity of the airfoil. The damping structure may be positioned within the airfoil inner cavity and coupled to the airfoil so as to define a tuned mass damper.

Simulation of Flow Through Breach in Leading Edge at Mach 24

NASA Technical Reports Server (NTRS)

Gnoffo, Peter A.; Alter, Stephen J.

2004-01-01

A baseline solution for CFD Point 1 (Mach 24) in the STS-107 accident investigation was modified to include effects of holes through the leading edge into a vented cavity. The simulations were generated relatively quickly and early in the investigation by making simplifications to the leading edge cavity geometry. These simplifications in the breach simulations enabled: 1) A very quick grid generation procedure; 2) High fidelity corroboration of jet physics with internal surface impingements ensuing from a breach through the leading edge, fully coupled to the external shock layer flow at flight conditions. These simulations provided early evidence that the flow through a 2 inch diameter (or larger) breach enters the cavity with significant retention of external flow directionality. A normal jet directed into the cavity was not an appropriate model for these conditions at CFD Point 1 (Mach 24). The breach diameters were of the same order or larger than the local, external boundary-layer thickness. High impingement heating and pressures on the downstream lip of the breach were computed. It is likely that hole shape would evolve as a slot cut in the direction of the external streamlines. In the case of the 6 inch diameter breach the boundary layer is fully ingested.

Electrodynamic properties of a hypercrystal with ferrite and semiconductor layers in an external magnetic field

NASA Astrophysics Data System (ADS)

Fedorin, Illia V.

2018-01-01

Electrodynamic properties of a photonic hypercrystal formed by periodically alternating two types of anisotropic metamaterials are studied. The first metamaterial consists of ferrite and dielectric layers, while the second metamaterial consists of semiconductor and dielectric layers. The system is assumed to be placed in an external magnetic field, which applied parallel to the boundaries of the layers. An effective medium theory which is suitable for calculation of properties of long-wavelength electromagnetic modes is applied in order to derive averaged expressions for effective constitutive parameters. It has been shown that providing a conscious choice of the constitutive parameters and material fractions of magnetic, semiconductor, and dielectric layers, the system under study shows hypercrystal properties for both TE and TM waves in the different frequency ranges.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Solar receiver performance of point focusing collector system

NASA Technical Reports Server (NTRS)

Wu, Y. C.; Wen, L. C.

1978-01-01

The solar receiver performance of cavity receivers and external receivers used in dispersed solar power systems was evaluated for the temperature range 300-1300 C. Several parameters of receiver and concentrator are examined. It was found that cavity receivers are generally more efficient than external receivers, especially at high temperatures which require a large heat transfer area. The effects of variation in the ratio of receiver area to aperture area are considered.

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

PubMed Central

Hardman, Kyle S.; Bennetts, Shayne; Debs, John E.; Kuhn, Carlos C. N.; McDonald, Gordon D.; Robins, Nick

2014-01-01

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs1,2. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling1,2 makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman3, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included. PMID:24796259

External cavity diode laser setup with two interference filters

NASA Astrophysics Data System (ADS)

Martin, Alexander; Baus, Patrick; Birkl, Gerhard

2016-12-01

We present an external cavity diode laser setup using two identical, commercially available interference filters operated in the blue wavelength range around 450 nm. The combination of the two filters decreases the transmission width, while increasing the edge steepness without a significant reduction in peak transmittance. Due to the broad spectral transmission of these interference filters compared to the internal mode spacing of blue laser diodes, an additional locking scheme, based on Hänsch-Couillaud locking to a cavity, has been added to improve the stability. The laser is stabilized to a line in the tellurium spectrum via saturation spectroscopy, and single-frequency operation for a duration of two days is demonstrated by monitoring the error signal of the lock and the piezo drive compensating the length change of the external resonator due to air pressure variations. Additionally, transmission curves of the filters and the spectra of a sample of diodes are given.

Widely tunable eye-safe laser by a passively Q-switched photonic crystal fiber laser and an external-cavity optical parametric oscillator

NASA Astrophysics Data System (ADS)

Chang, H. L.; Zhuang, W. Z.; Huang, W. C.; Huang, J. Y.; Huang, K. F.; Chen, Y. F.

2011-09-01

We report on a widely tunable passively Q-switched photonic crystal fiber (PCF) laser with wavelength tuning range up to 80 nm. The PCF laser utilizes an AlGaInAs quantum well/barrier structure as a saturable absorber and incorporates an external-cavity optical parametric oscillator (OPO) to achieve wavelength conversion. Under a pump power of 13.1 W at 976 nm, the PCF laser generated 1029-nm radiation with maximum output energy of 750 μJ and was incident into an external-cavity OPO. The output energy and peak power of signal wave was found to be 138 μJ and 19 kW, respectively. By tuning the temperature of nonlinear crystal, periodically poled lithium niobate (PPLN), in the OPO, the signal wavelength in eye-safe regime from 1513 to 1593 nm was obtained.

Construction and characterization of external cavity diode lasers for atomic physics.

PubMed

Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick

2014-04-24

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

INGOT MOLD

DOEpatents

Mangold, A.J. Jr.; MaHaffey, J.W.; Reese, S.L.

1958-04-29

An improved ingot-mold assembly is described, consisting of a body having a cavity and a recess extending through to the bottom of the body from the cavity, and the bottom of the cavity having an internal shoulder extending downward and a plug having an external shoulder. The plug extends above the shoulders and below the bottom of the body.

Turbine inter-disk cavity cooling air compressor

DOEpatents

Chupp, Raymond E.; Little, David A.

1998-01-01

The inter-disk cavity between turbine rotor disks is used to pressurize cooling air. A plurality of ridges extend radially outwardly over the face of the rotor disks. When the rotor disks are rotated, the ridges cause the inter-disk cavity to compress air coolant flowing through the inter-disk cavity en route to the rotor blades. The ridges eliminate the need for an external compressor to pressurize the air coolant.

Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Kulagina, M. M.; Zhukov, A. E.

2017-09-01

The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It is shown that in the case of short cavities (high external loss), there is an increase in the lasing power component corresponding to the ground-state optical transitions of QDs as the p-doping level grows. However, in the case of long cavities (small external loss), higher dopant concentrations may have an opposite effect on the output power. Based on these observations, an optimal design of laser geometry and an optimal doping level are discussed.

Apparatus for sectioning demountable semiconductor samples

DOEpatents

Sopori, B.L.; Wolf, A.

1984-01-01

Apparatus for use during polishing and sectioning operations of a ribbon sample is described. The sample holder includes a cylinder having an axially extending sample cavity terminated in a first funnel-shaped opening and a second slot-like opening. A spring-loaded pressure plunger is located adjacent the second opening of the sample cavity for frictional engagement of the sample cavity. A heat softenable molding medium is inserted in the funnel-shaped opening, to surround the sample. After polishing, the heater is energized to allow draining of the molding medium from the sample cavity. During manual polishing, the second end of the sample holder is inserted in a support ring which provides mechanical support as well as alignment of the sample holder during polishing. A gauge block for measuring the protrusion of a sample beyond the second wall of the holder is also disclosed.

Thermo-optic locking of a semiconductor laser to a microcavity resonance.

PubMed

McRae, T G; Lee, Kwan H; McGovern, M; Gwyther, D; Bowen, W P

2009-11-23

We experimentally demonstrate thermo-optic locking of a semiconductor laser to an integrated toroidal optical microcavity. The lock is maintained for time periods exceeding twelve hours, without requiring any electronic control systems. Fast control is achieved by optical feedback induced by scattering centers within the microcavity, with thermal locking due to optical heating maintaining constructive interference between the cavity and the laser. Furthermore, the optical feedback acts to narrow the laser linewidth, with ultra high quality microtoroid resonances offering the potential for ultralow linewidth on-chip lasers.

Analysis of signal to noise enhancement using a highly selective modulation tracking filter

NASA Technical Reports Server (NTRS)

Haden, C. R.; Alworth, C. W.

1972-01-01

Experiments are reported which utilize photodielectric effects in semiconductor loaded superconducting resonant circuits for suppressing noise in RF communication systems. The superconducting tunable cavity acts as a narrow band tracking filter for detecting conventional RF signals. Analytical techniques were developed which lead to prediction of signal-to-noise improvements. Progress is reported in optimization of the experimental variables. These include improved Q, new semiconductors, improved optics, and simplification of the electronics. Information bearing signals were passed through the system, and noise was introduced into the computer model.

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan

2018-03-01

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Nanometer-scale displacement sensing using self-mixing interferometry with a correlation-based signal processing technique

NASA Astrophysics Data System (ADS)

Hast, J.; Okkonen, M.; Heikkinen, H.; Krehut, L.; Myllylä, R.

2006-06-01

A self-mixing interferometer is proposed to measure nanometre-scale optical path length changes in the interferometer's external cavity. As light source, the developed technique uses a blue emitting GaN laser diode. An external reflector, a silicon mirror, driven by a piezo nanopositioner is used to produce an interference signal which is detected with the monitor photodiode of the laser diode. Changing the optical path length of the external cavity introduces a phase difference to the interference signal. This phase difference is detected using a signal processing algorithm based on Pearson's correlation coefficient and cubic spline interpolation techniques. The results show that the average deviation between the measured and actual displacements of the silicon mirror is 3.1 nm in the 0-110 nm displacement range. Moreover, the measured displacements follow linearly the actual displacement of the silicon mirror. Finally, the paper considers the effects produced by the temperature and current stability of the laser diode as well as dispersion effects in the external cavity of the interferometer. These reduce the sensor's measurement accuracy especially in long-term measurements.

Optical devices featuring nonpolar textured semiconductor layers

DOEpatents

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

2013-11-26

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aceves, Salvador M.; Ledesma-Orozco, Elias Rigoberto; Espinosa-Loza, Francisco

A pressure vessel apparatus for cryogenic capable storage of hydrogen or other cryogenic gases at high pressure includes an insert with a parallel inlet duct, a perpendicular inlet duct connected to the parallel inlet. The perpendicular inlet duct and the parallel inlet duct connect the interior cavity with the external components. The insert also includes a parallel outlet duct and a perpendicular outlet duct connected to the parallel outlet duct. The perpendicular outlet duct and the parallel outlet duct connect the interior cavity with the external components.

Gyrotron cavity resonator with an improved value of Q

DOEpatents

Stone, David S.; Shively, James F.

1982-10-26

A gyrotron cavity resonator is connected smoothly and directly to an output waveguide with a very gradually tapered wall so that values of external Q lower than twice the diffraction limit are obtainable.

Characterization of wavelength-swept active mode locking fiber laser based on reflective semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Lee, Hwi Don; Lee, Ju Han; Yung Jeong, Myung; Kim, Chang-Seok

2011-07-01

The static and dynamic characteristics of a wavelength-swept active mode locking (AML) fiber laser are presented in both the time-region and wavelength-region. This paper shows experimentally that the linewidth of a laser spectrum and the bandwidth of the sweeping wavelength are dependent directly on the length and dispersion of the fiber cavity as well as the modulation frequency and sweeping rate under the mode-locking condition. To achieve a narrower linewidth, a longer length and higher dispersion of the fiber cavity as well as a higher order mode locking condition are required simultaneously. For a broader bandwidth, a lower order of the mode locking condition is required using a lower modulation frequency. The dynamic sweeping performance is also analyzed experimentally to determine its applicability to optical coherence tomography imaging. It is shown that the maximum sweeping rate can be improved by the increased free spectral range from the shorter length of the fiber cavity. A reflective semiconductor optical amplifier (RSOA) was used to enhance the modulation and dispersion efficiency. Overall a triangular electrical signal can be used instead of the sinusoidal signal to sweep the lasing wavelength at a high sweeping rate due to the lack of mechanical restrictions in the wavelength sweeping mechanism.

Turbine inter-disk cavity cooling air compressor

DOEpatents

Chupp, R.E.; Little, D.A.

1998-01-06

The inter-disk cavity between turbine rotor disks is used to pressurize cooling air. A plurality of ridges extend radially outwardly over the face of the rotor disks. When the rotor disks are rotated, the ridges cause the inter-disk cavity to compress air coolant flowing through the inter-disk cavity en route to the rotor blades. The ridges eliminate the need for an external compressor to pressurize the air coolant. 5 figs.

Injector Cavities Fabrication, Vertical Test Performance and Primary Cryomodule Design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Haipeng; Cheng, Guangfeng; Clemens, William

2015-09-01

After the electromagnetic design and the mechanical design of a β=0.6, 2-cell elliptical SRF cavity, the cavity has been fabricated. Then both 2-cell and 7-cell cavities have been bench tuned to the target values of frequency, coupling external Q and field flatness. After buffer chemistry polishing (BCP) and high pressure rinses (HPR), Vertical 2K cavity test results have been satisfied the specifications and ready for the string assembly. We will report the cavity performance including Lorenz Force Detuning (LFD) and Higher Order Modes (HOM) damping data. Its integration with cavity tuners to the cryomodule design will be reported.

Vertical electro-absorption modulator design and its integration in a VCSEL

NASA Astrophysics Data System (ADS)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.

2018-04-01

Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

NASA Astrophysics Data System (ADS)

Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

2018-02-01

This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of < 40 kHz have been achieved. These developments offer a portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Maximov, M. V.

2015-11-01

The ways to optimize key parameters of active region and edge reflectivity of edge- emitting semiconductor quantum dot laser are provided. It is shown that in the case of optimal cavity length and sufficiently large dispersion lasing spectrum of a given width can be obtained at injection current up to an order of magnitude lower in comparison to non-optimized sample. The influence of internal loss and edge reflection is also studied in details.

Heterodyne optical phase-locking of extended-cavity semiconductor lasers at 9 GHz

NASA Astrophysics Data System (ADS)

Santarelli, G.; Clairon, A.; Lea, S. N.; Tino, G. M.

1994-01-01

In order to stimulate atomic velocity-selective Raman transitions on the 852 nm caesium D 2 line in an atomic fountain clock, two extended-cavity diode lasers have been optically phase-locked at a frequency offset of 9.192 GHz. The measured linewidth (fwhm) of the free-running lasers is 50 kHz. The phase-locked loop bandwidth, evaluated by observing the frequency noise spectrum, is 3.7 MHz and the phase error variance is found to be no more than 4 × 10 -3 rad 2.

InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

NASA Astrophysics Data System (ADS)

Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

2018-02-01

A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

Self-injection-locking linewidth narrowing in a semiconductor laser coupled to an external fiber-optic ring resonator

NASA Astrophysics Data System (ADS)

Korobko, Dmitry A.; Zolotovskii, Igor O.; Panajotov, Krassimir; Spirin, Vasily V.; Fotiadi, Andrei A.

2017-12-01

We develop a theoretical framework for modeling of semiconductor laser coupled to an external fiber-optic ring resonator. The developed approach has shown good qualitative agreement between theoretical predictions and experimental results for particular configuration of a self-injection locked DFB laser delivering narrow-band radiation. The model is capable of describing the main features of the experimentally measured laser outputs such as laser line narrowing, spectral shape of generated radiation, mode-hoping instabilities and makes possible exploring the key physical mechanisms responsible for the laser operation stability.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Measurements of farfield sound generation from a flow-excited cavity

NASA Technical Reports Server (NTRS)

Block, P. J. W.; Heller, H.

1975-01-01

Results of 1/3-octave-band spectral measurements of internal pressures and the external acoustic field of a tangentially blown rectangular cavity are compared. Proposed mechanisms for sound generation are reviewed, and spectra and directivity plots of cavity noise are presented. Directivity plots show a slightly modified monopole pattern. Frequencies of cavity response are calculated using existing predictions and are compared with those obtained experimentally. The effect of modifying the upstream boundary layer on the noise was investigated, and its effectiveness was found to be a function of cavity geometry and flow velocity.

Controlled waveguide coupling for photon emission from colloidal PbS quantum dot using tunable microcavity made of optical polymer and silicon

NASA Astrophysics Data System (ADS)

Nozaka, Takahiro; Mukai, Kohki

2016-04-01

A tunable microcavity device composed of optical polymer and Si with a colloidal quantum dot (QD) is proposed as a single-photon source for planar optical circuit. Cavity size is controlled by electrostatic micromachine behavior with the air bridge structure to tune timing of photon injection into optical waveguide from QD. Three-dimensional positioning of a QD in the cavity structure is available using a nanohole on Si processed by scanning probe microscope lithography. We fabricated the prototype microcavity with PbS-QD-mixed polymenthyl methacrylate on a SOI (semiconductor-on-insulator) substrate to show the tunability of cavity size as the shift of emission peak wavelength of QD ensemble.

Fiber-Coupled Cavity-QED Source of Identical Single Photons

NASA Astrophysics Data System (ADS)

Snijders, H.; Frey, J. A.; Norman, J.; Post, V. P.; Gossard, A. C.; Bowers, J. E.; van Exter, M. P.; Löffler, W.; Bouwmeester, D.

2018-03-01

We present a fully fiber-coupled source of high-fidelity single photons. An (In,Ga)As semiconductor quantum dot is embedded in an optical Fabry-Perot microcavity with a robust design and rigidly attached single-mode fibers, which enables through-fiber cross-polarized resonant laser excitation and photon extraction. Even without spectral filtering, we observe that the incident coherent light pulses are transformed into a stream of single photons with high purity (97%) and indistinguishability (90%), which is measured at an in-fiber brightness of 5% with an excellent cavity-mode-to-fiber coupling efficiency of 85%. Our results pave the way for fully fiber-integrated photonic quantum networks. Furthermore, our method is equally applicable to fiber-coupled solid-state cavity-QED-based photonic quantum gates.

Broadband External-Cavity Diode Laser

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey S.

2005-01-01

A broadband external-cavity diode laser (ECDL) has been invented for use in spectroscopic surveys preparatory to optical detection of gases. Heretofore, commercially available ECDLs have been designed, in conjunction with sophisticated tuning assemblies, for narrow- band (and, typically, single-frequency) operation, as needed for high sensitivity and high spectral resolution in some gas-detection applications. However, for preparatory spectroscopic surveys, high sensitivity and narrow-band operation are not needed; in such cases, the present broadband ECDL offers a simpler, less-expensive, more-compact alternative to a commercial narrowband ECDL.

Apparatus for sectioning demountable semiconductor samples

DOEpatents

Sopori, Bhushan L.; Wolf, Abraham

1984-01-01

Apparatus for use during polishing and sectioning operations of a ribbon sample is described. The sample holder includes a cylinder having an axially extending sample cavity terminated in a first funnel-shaped opening and a second slot-like opening. A spring-loaded pressure plunger is located adjacent the second opening of the sample cavity for frictional engagement of the sample prior to introduction of a molding medium in the sample cavity. A heat softenable molding medium is inserted in the funnel-shaped opening, to surround the sample. After polishing, the heater is energized to allow draining of the molding medium from the sample cavity. During manual polishing, the second end of the sample holder is inserted in a support ring which provides mechanical support as well as alignment of the sample holder during polishing. A gauge block for measuring the protrusion of a sample beyond the second wall of the holder is also disclosed.

Mid-Infrared Tunable Resonant Cavity Enhanced Detectors

PubMed Central

Quack, Niels; Blunier, Stefan; Dual, Jurg; Felder, Ferdinand; Arnold, Martin; Zogg, Hans

2008-01-01

Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED) principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the cavity length thus shifting the resonances where the detector is sensitive. Using electrostatically actuated MEMS micromirrors, a very compact tunable detector system has been fabricated. Mirror movements of more than 3 μm at 30V are obtained. With these mirrors, detectors with a wavelength tuning range of about 0.7 μm have been realized. Single detectors can be used in mid-infrared micro spectrometers, while a detector arrangement in an array makes it possible to realize Adaptive Focal Plane Arrays (AFPA). PMID:27873824

The role of wood hardness in limiting nest site selection in avian cavity excavators

Treesearch

Teresa J. Lorenz; Kerri T. Vierling; Timothy R. Johnson; Philip C. Fischer

2015-01-01

Woodpeckers and other primary cavity excavators (PCEs) are important worldwide for excavating cavities in trees, and a large number of studies have examined their nesting preferences. However, quantitative measures of wood hardness have been omitted from most studies, and ecologists have focused on the effects of external tree- and habitat-level features on nesting....

3D multiphysics modeling of superconducting cavities with a massively parallel simulation suite

NASA Astrophysics Data System (ADS)

Kononenko, Oleksiy; Adolphsen, Chris; Li, Zenghai; Ng, Cho-Kuen; Rivetta, Claudio

2017-10-01

Radiofrequency cavities based on superconducting technology are widely used in particle accelerators for various applications. The cavities usually have high quality factors and hence narrow bandwidths, so the field stability is sensitive to detuning from the Lorentz force and external loads, including vibrations and helium pressure variations. If not properly controlled, the detuning can result in a serious performance degradation of a superconducting accelerator, so an understanding of the underlying detuning mechanisms can be very helpful. Recent advances in the simulation suite ace3p have enabled realistic multiphysics characterization of such complex accelerator systems on supercomputers. In this paper, we present the new capabilities in ace3p for large-scale 3D multiphysics modeling of superconducting cavities, in particular, a parallel eigensolver for determining mechanical resonances, a parallel harmonic response solver to calculate the response of a cavity to external vibrations, and a numerical procedure to decompose mechanical loads, such as from the Lorentz force or piezoactuators, into the corresponding mechanical modes. These capabilities have been used to do an extensive rf-mechanical analysis of dressed TESLA-type superconducting cavities. The simulation results and their implications for the operational stability of the Linac Coherent Light Source-II are discussed.

Compact spectrometer for precision studies of multimode behavior in an extended-cavity diode laser

NASA Astrophysics Data System (ADS)

Roach, Timothy; Golemi, Josian; Krueger, Thomas

2016-05-01

We have built a compact, inexpensive, high-precision spectrometer and used it to investigate the tuning behavior of a grating stabilized extended-cavity diode laser (ECDL). A common ECDL design uses a laser chip with an uncoated (partially reflecting) front facet, and the laser output exhibits a complicated pattern of mode hops as the frequency is tuned, in some cases even showing chaotic dynamics. Our grating spectrometer (based on a design by White & Scholten) monitors a span of 4000 GHz (8 nm at 780 nm) with a linewidth of 3 GHz, which with line-splitting gives a precision of 0.02 GHz in determining the frequency of a laser mode. We have studied multimode operation of the ECDL, tracking two or three simultaneous chip cavity modes (spacing ~ 30 GHz) during tuning via current or piezo control of the external cavity. Simultaneous output on adjacent external cavity modes (spacing ~ 5 GHz) is monitored by measuring an increase in the spectral linewidth. Computer-control of the spectrometer (for line-fitting and averaging) and of the ECDL (electronic tuning) allows rapid collection of spectral data sets, which we will use to test mathematical simulation models of the non-linear laser cavity interactions.

Ultimate linewidth reduction of a semiconductor laser frequency-stabilized to a Fabry-Pérot interferometer.

PubMed

Bahoura, Messaoud; Clairon, André

2003-11-01

We report a theoretical dynamical analysis on effect of semiconductor laser phase noise on the achievable linewidth when locked to a Fabry-Pérot cavity fringe using a modulation-demodulation frequency stabilization technique such as the commonly used Pound-Drever-Hall frequency locking scheme. We show that, in the optical domain, the modulation-demodulation operation produces, in the presence of semiconductor laser phase noise, two kinds of excess noise, which could be much above the shot noise limit, namely, conversion noise (PM-to-AM) and intermodulation noise. We show that, in typical stabilization conditions, the ultimate semiconductor laser linewidth reduction can be severely limited by the intermodulation excess noise. The modulation-demodulation operation produces the undesirable nonlinear intermodulation effect through which the phase noise spectral components of the semiconductor laser, in the vicinity of even multiples of the modulation frequency, are downconverted into the bandpass of the frequency control loop. This adds a spurious signal, at the modulation frequency, to the error signal and limits the performance of the locked semiconductor laser. This effect, reported initially in the microwave domain using the quasistatic approximation, can be considerably reduced by a convenient choice of the modulation frequency.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Tunable semiconductor laser at 1025-1095 nm range for OCT applications with an extended imaging depth

NASA Astrophysics Data System (ADS)

Shramenko, Mikhail V.; Chamorovskiy, Alexander; Lyu, Hong-Chou; Lobintsov, Andrei A.; Karnowski, Karol; Yakubovich, Sergei D.; Wojtkowski, Maciej

2015-03-01

Tunable semiconductor laser for 1025-1095 nm spectral range is developed based on the InGaAs semiconductor optical amplifier and a narrow band-pass acousto-optic tunable filter in a fiber ring cavity. Mode-hop-free sweeping with tuning speeds of up to 104 nm/s was demonstrated. Instantaneous linewidth is in the range of 0.06-0.15 nm, side-mode suppression is up to 50 dB and polarization extinction ratio exceeds 18 dB. Optical power in output single mode fiber reaches 20 mW. The laser was used in OCT system for imaging a contact lens immersed in a 0.5% intra-lipid solution. The cross-section image provided the imaging depth of more than 5mm.

A semiconductor photon-sorter

NASA Astrophysics Data System (ADS)

Bennett, A. J.; Lee, J. P.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

2016-10-01

Obtaining substantial nonlinear effects at the single-photon level is a considerable challenge that holds great potential for quantum optical measurements and information processing. Of the progress that has been made in recent years one of the most promising methods is to scatter coherent light from quantum emitters, imprinting quantum correlations onto the photons. We report effective interactions between photons, controlled by a single semiconductor quantum dot that is weakly coupled to a monolithic cavity. We show that the nonlinearity of a transition modifies the counting statistics of a Poissonian beam, sorting the photons in number. This is used to create strong correlations between detection events and to create polarization-correlated photons from an uncorrelated stream using a single spin. These results pave the way for semiconductor optical switches operated by single quanta of light.

Regimes of radiative and nonradiative transitions in transport through an electronic system in a photon cavity reaching a steady state

NASA Astrophysics Data System (ADS)

Gudmundsson, Vidar; Jonsson, Thorsteinn H.; Bernodusson, Maria Laura; Abdullah, Nzar Rauf; Sitek, Anna; Goan, Hsi-Sheng; Tang, Chi-Shung; Manolescu, Andrei

2017-01-01

We analyze how a multilevel many-electron system in a photon cavity approaches the steady state when coupled to external leads. When a plunger gate is used to lower cavity photon dressed one- and two-electron states below the bias window defined by the external leads, we can identify one regime with nonradiative transitions dominating the electron transport, and another regime with radiative transitions. Both transitions trap the electrons in the states below the bias bringing the system into a steady state. The order of the two regimes and their relative strength depends on the location of the bias window in the energy spectrum of the system and the initial conditions.

Porous photonic crystal external cavity laser biosensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Qinglan; Peh, Jessie; Hergenrother, Paul J.

2016-08-15

We report the design, fabrication, and testing of a photonic crystal (PC) biosensor structure that incorporates a porous high refractive index TiO{sub 2} dielectric film that enables immobilization of capture proteins within an enhanced surface-area volume that spatially overlaps with the regions of resonant electromagnetic fields where biomolecular binding can produce the greatest shifts in photonic crystal resonant wavelength. Despite the nanoscale porosity of the sensor structure, the PC slab exhibits narrowband and high efficiency resonant reflection, enabling the structure to serve as a wavelength-tunable element of an external cavity laser. In the context of sensing small molecule interactions withmore » much larger immobilized proteins, we demonstrate that the porous structure provides 3.7× larger biosensor signals than an equivalent nonporous structure, while the external cavity laser (ECL) detection method provides capability for sensing picometer-scale shifts in the PC resonant wavelength caused by small molecule binding. The porous ECL achieves a record high figure of merit for label-free optical biosensors.« less

Decreased oscillation threshold of a continuous-wave OPO using a semiconductor gain mirror.

PubMed

Siltanen, Mikael; Leinonen, Tomi; Halonen, Lauri

2011-09-26

We have constructed a singly resonant, continuous-wave optical parametric oscillator, where the signal beam resonates and is amplified by a semiconductor gain mirror. The gain mirror can significantly decrease the oscillation threshold compared to an identical system with conventional mirrors. The largest idler beam tuning range reached by changing the pump laser wavelength alone is from 3.6 to 4.7 µm. The single mode output power is limited but can be continuously scanned for at least 220 GHz by adding optical components in the oscillator cavity for increased stability. © 2011 Optical Society of America

Dynamic stability analysis for a self-mixing interferometry system.

PubMed

Fan, Yuanlong; Yu, Yanguang; Xi, Jiangtao; Guo, Qinghua

2014-11-17

A self-mixing interferometry (SMI) system is a laser diode (LD) with an external cavity formed by a moving external target. The behavior of an SMI system is governed by the injection current J to the LD and the parameters associated with the external cavity mainly including optical feedback factor C, the initial external cavity length (L₀) and the light phase (ϕ₀) which is mapped to the movement of the target. In this paper, we investigate the dynamic behavior of an SMI system by using the Lang-Kobayashi model. The stability boundary of such system is presented in the plane of (C, ϕ₀), from which a critical C (denoted as C(critical)) is derived. Both simulations and experiments show that the stability can be enhanced by increasing either L₀ or J. Furthermore, three regions on the plane of (C, ϕ₀) are proposed to characterize the behavior of an SMI system, including stable, semi-stable and unstable regions. We found that the existing SMI model is only valid for the stable region, and the semi-stable region has potential applications on sensing and measurement but needs re-modeling the system by considering the bandwidth of the detection components.

An impedance analysis of double-stream interaction in semiconductors

NASA Technical Reports Server (NTRS)

Chen, P. W.; Durney, C. H.

1972-01-01

The electromagnetic waves propagating through a drifting semiconductor plasma are studied from a macroscopic point of view in terms of double-stream interaction. The possible existing waves (helicon waves, longitudinal waves, ordinary waves, and pseudolongitudinal waves) which depend upon the orientation of the dc external magnetic field are derived. A powerful impedance concept is introduced to investigate the wave behavior of longitudinal (space charge) waves or pseudolongitudinal waves in a semiconductor plasma. The impedances due to one- and two-carrier stream interactions were calculated theoretically.

Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor

NASA Astrophysics Data System (ADS)

Qinwen, XUE; Xiaohua, WANG; Chenglin, LIU; Youwen, LIU

2018-03-01

The tunable terahertz (THz) filter has been designed and studied, which is composed of 1D photonic crystal (PC) containing a defect layer of semiconductor GaAs. The analytical solution of 1D defective PC (1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO2) N /GaAs/(SiO2/Si) N /air is far higher than in asymmetric structure of air/(Si/SiO2) N /GaAs/(Si/SiO2) N /air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.

Efficient expulsion of magnetic flux in superconducting radiofrequency cavities for high Q{sub 0} applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posen, S., E-mail: sposen@fnal.gov; Checchin, M.; Crawford, A. C.

2016-06-07

Even when cooled through its transition temperature in the presence of an external magnetic field, a superconductor can expel nearly all external magnetic flux. This paper presents an experimental study to identify the parameters that most strongly influence flux trapping in high purity niobium during cooldown. This is critical to the operation of superconducting radiofrequency cavities, in which trapped flux degrades the quality factor and therefore cryogenic efficiency. Flux expulsion was measured on a large survey of 1.3 GHz cavities prepared in various ways. It is shown that both spatial thermal gradient and high temperature treatment are critical to expelling externalmore » magnetic fields, while surface treatment has minimal effect. For the first time, it is shown that a cavity can be converted from poor expulsion behavior to strong expulsion behavior after furnace treatment, resulting in a substantial improvement in quality factor. Microscopic investigations are performed to study the relevant changes in the material from this treatment. Future plans are described to build on this result in order to optimize treatment for future cavities.« less

Modified Magnicon for High-Gradient Accelerator \\&

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakovlev, V. P.; Hirshfield, J. L.; Jiang, Y.

2012-05-01

A self-consistent design is described of a modified 34.3 GHz magnicon amplifier with a TE311-mode output cavity, to replace the existing magnicon at Yale Beam Physics Lab Test Facility whose output cavity operates in the TM310 mode. The main g oal for the new design is to achieve robust reliable operation. This is expected since tube performance according to simulations is largely insensitive to the magnitude of external dc magnetic fields, including imperfections in magnetic field profile; small changes in gun voltage and current; changes in electron beam radial size; and even poorly matched external circuitry. The new tube, asmore » with its predecessor, is a third harmonic amplifier, with drive and deflection gain cavities near 11.424 GHz and output cavity at 34.272 GHz. The design calculations predict stable output of power of 20-27 MW at a 10 Hz repetition rate in pulses up to 1.3 microsec long, with a low probability of breakdown in the output cavity because of low electric fields (less tha n 650 kV/cm).« less

Feedback-controlled radiation pressure cooling

NASA Astrophysics Data System (ADS)

Prior, Yehiam; Vilensky, Mark; Averbukh, Ilya Sh.

2008-03-01

We propose a new approach to laser cooling of micromechanical devices, which is based on the phenomenon of optical bistability. These devices are modeled as a Fabry-Perot resonator with one fixed and one oscillating mirror. The bistability may be induced by an external feedback loop. When excited by an external laser, the cavity field has two co-existing stable steady-states depending on the position of the moving mirror. If the latter moves slow enough, the field in the cavity adjusts itself adiabatically to the mirror's instantaneous position. The mirror experiences radiation pressure corresponding to the intensity value. A sharp transition between two values of the radiation pressure force happens twice per every period of the mirror oscillation at non-equivalent positions (hysteresis effect), which leads to a non-zero net energy loss. The cooling mechanism resembles Sisyphus cooling in which the cavity mode performs sudden transitions between two stable states. We provide a dynamical stability analysis of the coupled moving mirror -- cavity field system, and find the parameters for efficient cooling. Direct numerical simulations show that a bistable cavity provides much more efficient cooling compared to the regular one.

Colored ultra-thin hybrid photovoltaics with high quantum efficiency for decorative PV applications (Presentation Recording)

NASA Astrophysics Data System (ADS)

Guo, L. Jay

2015-10-01

This talk will describe an approach to create architecturally compatible and decorative thin-film-based hybrid photovoltaics [1]. Most current solar panels are fabricated via complex processes using expensive semiconductor materials, and they are rigid and heavy with a dull, black appearance. As a result of their non-aesthetic appearance and weight, they are primarily installed on rooftops to minimize their negative impact on building appearance. Recently we introduced dual-function solar cells based on ultra-thin dopant-free amorphous silicon embedded in an optical cavity that not only efficiently extract the photogenerated carriers but also display distinctive colors with the desired angle-insensitive appearances [1,2]. The angle-insensitive behavior is the result of an interesting phase cancellation effect in the optical cavity with respect to angle of light propagation [3]. In order to produce the desired optical effect, the semiconductor layer should be ultra-thin and the traditional doped layers need to be eliminated. We adopted the approach of employing charge transport/blocking layers used in organic solar cells to meet this demand. We showed that the ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell can transmit desired wavelength of light and that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges. This is because the a-Si layer thickness is smaller than the charge diffusion length, therefore the electron-hole recombination is strongly suppressed in such ultra-thin layer. Reflective colored PVs can be made in a similar fashion. Light-energy-harvesting colored signage was demonstrated. Furthermore, a cascaded photovoltaics scheme based on tunable spectrum splitting can be employed to increase power efficiency by absorbing a broader band of light energy. Our work provides a guideline for optimizing a photoactive layer thickness in high efficiency hybrid PV design, which can be adopted by other material systems as well. Based on these understandings, we have also developed colored perovskite PV by integrating an optical cavity with the perovskite semiconductors [4]. The principle and experimental results will be presented. 1. J. Y. Lee, K. T. Lee, S.Y. Seo, L. J. Guo, "Decorative power generating panels creating angle insensitive transmissive colors," Sci. Rep. 4, 4192, 2014. 2. K. T. Lee, J.Y. Lee, S.-Y. Seo, and L. J. Guo, "Colored ultra-thin hybrid photovoltaics with high quantum efficiency," Light: Science and Applications, 3, e215, 2014. 3. K. T. Lee, S.-Y. Seo, J.Y. Lee, and L. J. Guo, "Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters," Appl. Phys. Lett. 104, 231112, (2014); and "Strong resonance effect in a lossy medium-based optical cavity for angle robust spectrum filters," Adv. Mater, 26, 6324-6328, 2014. 4. K. T. Lee, M. Fukuda, L. J. Guo, "Colored, see-through perovskite solar cells employing an optical cavity," Submitted, 2015

Computed tomographic features of the osseous structures of the external acoustic meatus, tympanic cavity, and tympanic bulla of llamas (Lama glama).

PubMed

Concha-Albornoz, Ismael; Stieger-Vanegas, Susanne M; Cebra, Christopher K

2012-01-01

To evaluate the osseous structures of the external acoustic meatus, tympanic cavity, and tympanic bulla of llamas (Lama glama) by use of computed tomography (CT) and establish measurement values for use in detection of abnormalities associated with the external or middle ear in llamas. 10 adult llama heads without any evidence of ear disease. Heads of 10 healthy llamas euthanized by use of a captive bolt striking the dorsal aspect of the skull were collected. Transverse images of the heads were acquired with 1-mm slice thickness, and images were reconstructed in sagittal and dorsal planes. Measurements of the bony structures of the external and middle ear of each head were obtained. The osseous external acoustic meatus curved ventrally as it tracked medially. Its narrowest portion was located at the level of the tympanic annulus. The tympanic bulla conformation differed widely from the bubble-shaped tympanic bulla in dogs and cats. The bulla was divided by the stylohyoid fossa into a larger caudolateral and a smaller caudomedial process; its interior had a honeycombed structure with pneumatized cells similar to the honeycombed appearance of the human mastoid process. Results provided new information regarding the shape and dimensions of the osseous external and middle ear structures in adult llamas without ear disease. Specific landmarks for location of the external acoustic meatus, tympanic cavity, and tympanic bulla in relation to each other were identified. Knowledge of the CT appearance of normal structures will help clinicians to identify changes attributable to middle ear otitis, external ear canal stenosis, or congenital malformations of the ear in this species.

Liquid crystal cells with built-in CdSe nanotubes for chromogenic smart emission devices.

PubMed

Lin, Tsung Ju; Chen, Chin-Chang; Cheng, Soofin; Chen, Yang Fang

2008-01-21

A simple and general approach for controlling optical anisotropy of nanostructured semiconductors is reported. Our design involves the fabrication of liquid crystal devices with built-in semiconductor nanotubes. Quite interestingly, it is found that semiconductor nanotubes can be well aligned along the orientation of liquid crystals molecules automatically, resulting in a very large emission anisotropy with the degree of polarization up to 72%. This intriguing result manifests a way to obtain well aligned semiconductor nanotubes and the emission anisotropy can be easily manipulated by an external bias. The ability to well control the emission anisotropy should open up new opportunities for nanostructured semiconductors, including optical filters, polarized light emitting diodes, flat panel displays, and many other chromogenic smart devices.

Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

NASA Technical Reports Server (NTRS)

Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

2001-01-01

The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch-modulation (using a detuned central section to prevent intensity peaking in the center of the cavity) is currently under investigation to achieve the required performance goals.

External control of semiconductor nanostructure lasers

NASA Astrophysics Data System (ADS)

Naderi, Nader A.

2011-12-01

Novel semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. This is mainly due to their unique carrier dynamics compared to conventional quantum-well lasers that enables their potential for high differential gain and modified linewidth enhancement factor. However, there are known intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is through the use of external control techniques. The electrical and/or optical external perturbations can be implemented to improve the parameters associated with the intrinsic laser's dynamics, such as threshold gain, damping rate, spectral linewidth, and mode selectivity. In this dissertation, studies on the impact of external control techniques through optical injection-locking, optical feedback and asymmetric current bias control on the overall performance of the nanostructure lasers were conducted in order to understand the associated intrinsic device limitations and to develop strategies for controlling the underlying dynamics to improve laser performance. In turn, the findings of this work can act as a guideline for making high performance nanostructure lasers for future ultra fast data transmitters in long-haul optical communication systems, and some can provide an insight into making a compact and low-cost terahertz optical source for future implementation in monolithic millimeter-wave integrated circuits.

Effects of Wing Leading Edge Penetration with Venting and Exhaust Flow from Wheel Well at Mach 24 in Flight

NASA Technical Reports Server (NTRS)

Gnoffo, Peter A.

2003-01-01

A baseline solution for CFD Point 1 (Mach 24) in the STS-107 accident investigation was modified to include effects of: (1) holes through the leading edge into a vented cavity; and (2) a scarfed, conical nozzle directed toward the centerline of the vehicle from the forward, inboard corner of the landing gear door. The simulations were generated relatively quickly and early in the investigation because simplifications were made to the leading edge cavity geometry and an existing utility to merge scarfed nozzle grid domains with structured baseline external domains was implemented. These simplifications in the breach simulations enabled: (1) a very quick grid generation procedure; and (2) high fidelity corroboration of jet physics with internal surface impingements ensuing from a breach through the leading edge, fully coupled to the external shock layer flow at flight conditions. These simulations provided early evidence that the flow through a two-inch diameter (or larger) breach enters the cavity with significant retention of external flow directionality. A normal jet directed into the cavity was not an appropriate model for these conditions at CFD Point 1 (Mach 24). The breach diameters were of the same order or larger than the local, external boundary-layer thickness. High impingement heating and pressures on the downstream lip of the breach were computed. It is likely that hole shape would evolve as a slot cut in the direction of the external streamlines. In the case of the six-inch diameter breach the boundary layer is fully ingested. The intent of externally directed jet simulations in the second scenario was to approximately model aerodynamic effects of a relatively large internal wing pressure, fueled by combusting aluminum, which deforms the corner of the landing gear door and directs a jet across the windside surface. These jet interactions, in and of themselves, were not sufficiently large to explain observed aerodynamic behavior.

Ultrasensitive, real-time analysis of biomarkers in breath using tunable external cavity laser and off-axis cavity-enhanced absorption spectroscopy

NASA Astrophysics Data System (ADS)

Bayrakli, Ismail; Akman, Hatice

2015-03-01

A robust biomedical sensor for ultrasensitive detection of biomarkers in breath based on a tunable external cavity laser (ECL) and an off-axis cavity-enhanced absorption spectroscopy (OA-CEAS) using an amplitude stabilizer is developed. A single-mode, narrow-linewidth, tunable ECL is demonstrated. A broadly coarse wavelength tuning range of 720 cm-1 for the spectral range between 6890 and 6170 cm-1 is achieved by rotating the diffraction grating forming a Littrow-type external-cavity configuration. A mode-hop-free tuning range of 1.85 cm-1 is obtained. The linewidths below 140 kHz are recorded. The ECL is combined with an OA-CEAS to perform laser chemical sensing. Our system is able to detect any molecule in breath at concentrations to the ppbv range that have absorption lines in the spectral range between 1450 and 1620 nm. Ammonia is selected as target molecule to evaluate the performance of the sensor. Using the absorption line of ammonia at 6528.76 cm-1, a minimum detectable absorption coefficient of approximately 1×10-8 cm-1 is demonstrated for 256 averages. This is achieved for a 1.4-km absorption path length and a 2-s data-acquisition time. These results yield a detection sensitivity of approximately 8.6×10-10 cm-1 Hz-1/2. Ammonia in exhaled breath is analyzed and found in a concentration of 870 ppb for our example.

Ultrasensitive, real-time analysis of biomarkers in breath using tunable external cavity laser and off-axis cavity-enhanced absorption spectroscopy.

PubMed

Bayrakli, Ismail; Akman, Hatice

2015-03-01

A robust biomedical sensor for ultrasensitive detection of biomarkers in breath based on a tunable external cavity laser (ECL) and an off-axis cavity-enhanced absorption spectroscopy (OA-CEAS) using an amplitude stabilizer is developed. A single-mode, narrow-linewidth, tunable ECL is demonstrated. A broadly coarse wavelength tuning range of 720 cm⁻¹ for the spectral range between 6890 and 6170 cm⁻¹ is achieved by rotating the diffraction grating forming a Littrow-type external-cavity configuration. A mode-hop-free tuning range of 1.85 cm⁻¹ is obtained. The linewidths below 140 kHz are recorded. The ECL is combined with an OA-CEAS to perform laser chemical sensing. Our system is able to detect any molecule in breath at concentrations to the ppbv range that have absorption lines in the spectral range between 1450 and 1620 nm. Ammonia is selected as target molecule to evaluate the performance of the sensor. Using the absorption line of ammonia at 6528.76 cm⁻¹, a minimum detectable absorption coefficient of approximately 1×10⁻⁸ cm⁻¹ is demonstrated for 256 averages. This is achieved for a 1.4-km absorption path length and a 2-s data-acquisition time. These results yield a detection sensitivity of approximately 8.6×10⁻¹⁰ cm⁻¹ Hz(-1/2). Ammonia in exhaled breath is analyzed and found in a concentration of 870 ppb for our example.

Manipulating semiconductor colloidal stability through doping.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Preface

NASA Astrophysics Data System (ADS)

2003-10-01

Light is absorbed by promoting electrons between quantum states. Our control of this key optoelectronic interaction has improved radically in recent years as we become smarter about finding ways to affect this fundamental process. For decades, researchers concentrated on improving optical properties through changing the properties of the electronic states, by choosing appropriate atoms, molecules or solids, and by growing crystals of a perfection not found in nature. Huge developments in material science saw the introduction of many optically special materials, such as compound semiconductors and their nanostructures. Recently we have found new ways to manipulate the light-matter interaction by modifying the photonic components, for instance by enhancing the optical field with feedback in cavities. This second `knob' on the light-matter interaction manipulates the optical density of states. Besides simply enhancing the interaction by locally amplifying the electromagnetic fields, the modified optical density of states produced by photonic structuring allows emission and absorption rates to be enhanced or suppressed, now known as the Purcell effect. Atom-filled optical cavities exhibit many of these interesting phenomena. But it was not until the advent of high-quality semiconductor epitaxy that transitions with sufficient oscillator strength and a narrow-enough linewidth could be produced to uncover a third approach to modifying the light-matter interaction. A simple offshoot of the technology development of vertical-cavity semiconductor lasers, the combination of high-reflectivity semiconductor mirrors and narrow strong absorption lines of semiconductor quantum wells, opens a new regime. This `strong-coupling' regime emerges when the time it takes a photon to be emitted and pass once around the cavity to be then reabsorbed (known as the inverse `Rabi' frequency) becomes less than the time for the photon to leak out of the cavity or for the electronic transition to lose its phase coherence. In 1991 the first such semiconductor structure showed the resulting Rabi splitting, with electron and photon states being mixed together by the optical interaction into polaritons (Weisbuch et al 1992 Phys. Rev. Lett. 69 3314). Why do polaritons in semiconductors give us so many new properties, many of which are explored in this special issue? They are the third knob to tweak on the light-matter box because the mixing revises the underlying quantum states; polaritons then have different properties to electron-hole pairs. Instead of merely working on reshaping the wavefunctions of the electrons, we use the electric-dipole coupling to mix in some photon component and alter the way that optical energy couples in and out of the material. Polaritons have one of the biggest spatial wavefunctions that we know how to make, they possess boson symmetry, and weigh very little compared to electrons. But it is not really their individual properties that make them of such importance, it is their interactions. It took another decade after the first polaritons were seen in semiconductor microcavities before it was found that the interaction between polaritons was orders of magnitude stronger than between electron-hole pairs (Baumberg 2001 Physics World 15 (3) 37 and Savvidis et al 2000 Phys. Rev. Lett. 84 1547). The key revelation in understanding polaritons has been their dispersion relation, which is completely distorted compared to that of the electron-hole pairs (Houdre et al 1994 Phys. Rev. Lett. 73 2043). Of course polaritons exist in bulk materials (Hopfield 1958 Phys. Rev. 112 155) but the shape of the dispersion there is again different and not favourable for many of the polariton interactions that are reported throughout this issue. In semiconductor microcavities, the new dispersion relations take the form of an energy `trap' in momentum space. As in golf, polaritons tend to collect either at the bottom of the trap or around its edges. Through an intense concentration of research, both theoretical and experimental, over the past three years much has become clearer about how polaritons behave, including suggestions about how they can be made to work for us in producing hitherto inaccessible physical phenomena of technological interest. Thus, it is timely to collect many of the excellent contributions together into a special issue in which much of this science can be treated in the depth it deserves. We can divide the contributions into those that promise new sorts of strongly-coupled microcavity devices; those which explore how polaritons are formed, how they scatter, and how they decay; and those which identify more of the unusual polariton particularly at the bottom of the dispersion relation). This latter topic reopens the question of whether Bose-Einstein (or in this case, polariton) condensation is possible or has been seen in these unusual structures. This field then crosses a number of important research areas including micro-lasers, lasing without inversion, condensation and superfluidity, new spin properties, ultrafast optical nonlinearities and quantum optics. We have included a review article by Quatropanni and co-workers, which discusses theoretical aspects of the nonlinear optical properties of semiconductor microcavities in the strong exciton-photon coupling regime, which was planned to appear as a separate paper in Semiconductor Science and Technology, but which was considered more appropriate to be incorporated in this issue. A theoretical description of coherent nonlinearities in semiconductor microcavities is given by Savasta et al, who show that the strong energy dependence of the two exciton states damping is crucial to explain the dependence of the experimentally reported results on Rabi splitting and detuning. Stimulated polariton scattering, arising from the bosonic character of polaritons, is described by Skolnick's group, who also emphasize the role of the unusual dispersion of the lower polariton branch to allow much of the new physics in semiconductor microcavities. Non-linear effects in semiconductor microcavities, which include stimulated polariton scattering, parametric oscillation, spin dynamics, and the possibilities of a polariton condensate, are discussed by Baumberg et al. The suppression of the relaxation bottleneck on the lower polariton branch and the stimulation of the emission in II-VI based microcavities is demonstrated by Dang and collaborators, who also probe the coherent dynamics along the lower polariton branch by means of angle-resolved four wave mixing experiments. The possibility to observe parametric polariton amplification at room temperature is discussed by Deveaud's team, who demonstrate that this could be achieved in cavities, in which quantum wells with a large exciton binding energy are embedded, such as in GaN-based cavities. The effects induced by a two-dimensional electron gas on the interaction between the electromagnetic field and the excitons in a semiconductor microcavity are discussed by Cohen et al, who show that the presence of the electron gas is responsible for an efficient interaction between electrons and polaritons. The modification of the optical mode spectrum in microcavities, by introducing lateral photon confinement, is demonstrated by Bayer and collaborators, who show the possibility of tailoring elastic polariton pair-scattering and a suppression of the spontaneous emission for quantum dots embedded in such cavities. The optical properties of biexcitons in microcavities are reviewed by Langbein et al, who perform a detailed investigation of the polariton-biexciton transition and study the biexciton binding energy and dephasing in a microcavity at low temperature. A detailed experimental study of linear and circular polarization dynamics in secondary emission of microcavities in the strong coupling regime is presented by Amand's group, who show that it is possible to manipulate the polariton spin and alignment within the optical dephasing time. The spin dynamics under non-resonant excitation is presented by Viña's co-workers, who demonstrate that the polarization of the emission is controlled by the detuning of the cavity and the exciton modes, leading to crossed-polarized emission after circularly-polarized excitation at negative detunings. The enhancement of the resonant Raman scattering using semiconductor planar microcavities is described by Fainstein and Jusserand, who also propose a novel phonon microcavity structure and demonstrate the existence of acoustical phonon confined modes in these structures. Exciton-polariton lasing and its relation with the formation of a macroscopic coherence, associated with a Bose-Einstein phase transition, is reviewed by Yamamoto et al. A calculation of the phase diagram of a weakly interacting polariton gas in a microcavity is given by Kavokin and collaborators, who also describe the possible condensation of polaritons using a quantum kinetic formalism. The quantum mechanical nature of the light field in semiconductor microcavities is revealed by the teams of Gibbs and Koch, who describe entanglement effects in the probe reflectivity of a microcavity system and squeezing in the incoherent emission. Normal-mode coupling in photonic crystals is demonstrated by Ishihara's group, who present experimental evidence of the strong coupling regime, detuning schemes, and anticrossing behaviour in absorption and photoluminescence investigations. Characteristic features of organic semiconductor microcavities, the similarities and differences between inorganic and organic cavities operating within the strong coupling regime and the identification of novel features of the organic systems that can be exploited in new structures are discussed by Bradley et al, who also present prospects for inorganic/organic hybrid materials that may form the seed of a new paradigm in optoelectronic devices. A theoretical analysis of resonant acousto-optic Stark effects for microcavity polaritons is presented by Ivanov and Littlewood, who also discuss possible applications of this effect for optical modulation and switching. Hopefully, as well as providing a new resource, this issue will stimulate imaginative exploitation of this emerging field. Guest Editors J J Baumberg Departments of Physics & Astronomy, Electronics & Computer Science, University of Southampton, Southampton SO17 1BJ, UK L Viña Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, E-28049, Madrid, Spain

Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

PubMed Central

2014-01-01

Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

Optical Properties of A GaInNAs Multi-Quantum Well Semiconductor

NASA Astrophysics Data System (ADS)

Hughes, Timothy S.; Ren, Shang-Fen; Jiang, De-Sheng; Xiaogan, Liang

2002-03-01

Optoelectronic devices used today depend on lasers that have wavelengths in the optical fiber transmission window of 1.3 to 1.55 micrometers. When using GaAs substrate semiconductor lasers, we typically see this range of light emission. Quaternary materials, such as GaInNAs grown on this substrate, not only allow us to control the output wavelength, but it also allows us to manipulate the lattice constant. Further research has potential to produce low-costing highly efficient Vertical Cavity Surface Emitting Lasers (VCSEL). Using a Fourier-Transform Spectrometer, a method of using a Michelson Interferometer to measure the interference between two coherent beams, we measured and analyzed the photoluminescence spectra of a GaInNAs multi-quantum well semiconductor, grown using the Molecular Beam Epitaxy (MBE) growth technique. The experiments of this research were carried out in an undergraduate international research experience at the Chinese Semiconductor Institute supported by the Division of International Programs of NSF.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Matrix laser IR-visible image converter

NASA Astrophysics Data System (ADS)

Lipatov, N. I.; Biryukov, A. S.

2006-04-01

A new type of a focal matrix IR-visible image converter is proposed. The pixel IR detectors of the matrix are tunable microcavities of VCSEL (vertical-cavity surface emitting laser) semiconductor microstructures. The image conversion is performed due to the displacements of highly reflecting cavity mirrors caused by thermoelastic stresses in their microsuspensions appearing upon absorption of IR radiation. Analysis of the possibilities of the converter shows that its sensitivity is 10-3-10-2 K and the time response is 10-4-10-3 s. These characteristics determine the practical application of the converter.

Nanotribology Investigations of Solid and Liquid Lubricants Using Scanned Probe Microscopies

DTIC Science & Technology

2000-01-28

Kai Rose, postdoctoral fellow (external fellowship support; supplies on AFOSR) 7. Ernesto Joselevich, postdoctoral fellow (external fellowship...scale friction measurements", European Semiconductor, July/August 1997. 2. I. Amato , "Candid Cameras for the Nanoworld," Science 276, 1982-1985 (1997

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

NASA Astrophysics Data System (ADS)

Rossbach, Georg; Levrat, Jacques; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2013-10-01

It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems from their excitonic fraction being intrinsically subject to Coulomb interactions and the Pauli-blocking principle at high carrier densities. By means of injection-dependent photoluminescence studies performed nonresonantly on a GaN-based MC at various temperatures, it is shown that already below the condensation threshold saturation effects generally dominate over any energy variation in the excitonic resonance. This observation is in sharp contrast to the usually assumed picture in strongly coupled semiconductor MCs, where the impact of saturation is widely neglected. These experimental findings are confirmed by tracking the exciton emission properties of the bare MC active medium and those of a high-quality single GaN quantum well up to the Mott density. The systematic investigation of renormalization up to the polariton condensation threshold as a function of lattice temperature and exciton-cavity photon detuning is strongly hampered by photonic disorder. However, when overcoming the latter by averaging over a larger spot size, a behavior in agreement with a saturation-dominated polariton renormalization is revealed. Finally, a comparison with other inorganic material systems suggests that for correctly reproducing polariton renormalization, exciton saturation effects should be taken into account systematically.

Thermal modeling of a pressurized air cavity receiver for solar dish Stirling system

NASA Astrophysics Data System (ADS)

Zou, Chongzhe; Zhang, Yanping; Falcoz, Quentin; Neveu, Pierre; Li, Jianlan; Zhang, Cheng

2017-06-01

A solar cavity receiver model for the dish collector system is designed in response to growing demand of renewable energy. In the present research field, no investigations into the geometric parameters of a cavity receiver have been performed. The cylindrical receiver in this study is composed of an enclosed bottom at the back, an aperture at the front, a helical pipe inside the cavity and an insulation layer on the external surface of the cavity. The influence of several critical receiver parameters on the thermal efficiency is analyzed in this paper: cavity inner diameter and cavity length. The thermal model in this paper is solved considering the cavity dimensions as variables. Implementing the model into EES, each parameter influence is separately investigated, and a preliminary optimization method is proposed.

Interference effects in a cavity for optical amplification

NASA Astrophysics Data System (ADS)

Cardimona, D. A.; Alsing, P. M.

2009-08-01

In space situational awareness scenarios, the objects needed to be characterized and identified are usually quite far away and quite dim. Thus, optical detectors need to be able to sense these very dim optical signals. Quantum interference in a three-level system can lead to amplification of optical signals. If we put a three-level system into a cavity tuned to the frequency of an incoming optical signal, we anticipate the amplification possibilities should be increased proportional to the quality factor of the cavity. Our vision is to utilize quantum dots in photonic crystal cavities, but as a stepping stone we first investigate a simple three-level system in a free-space optical cavity. We investigate quantum interference and classical interference effects when a three-level system interacts with both a cavity field mode and an external driving field mode. We find that under certain circumstances the cavity field evolves to be equal in magnitude to, but 180° out-of-phase with the external pump field when the pump field frequency equals the cavity frequency. At this point the resonance fluorescence from the atom in the cavity goes to zero due to a purely classical interference effect between the two out-of-phase fields. This is quite different from the quantum interference that occurs under the right circumstances, when the state populations are coherently driven into a linear combination that is decoupled from any applied field - and population is trapped in the excited states, thus allowing for a population inversion and an amplification of incoming optical signals.

Passive tire pressure sensor and method

DOEpatents

Pfeifer, Kent Bryant; Williams, Robert Leslie; Waldschmidt, Robert Lee; Morgan, Catherine Hook

2006-08-29

A surface acoustic wave device includes a micro-machined pressure transducer for monitoring tire pressure. The device is configured having a micro-machined cavity that is sealed with a flexible conductive membrane. When an external tire pressure equivalent to the cavity pressure is detected, the membrane makes contact with ridges on the backside of the surface acoustic wave device. The ridges are electrically connected to conductive fingers of the device. When the detected pressure is correct, selected fingers on the device will be grounded producing patterned acoustic reflections to an impulse RF signal. When the external tire pressure is less than the cavity reference pressure, a reduced reflected signal to the receiver results. The sensor may further be constructed so as to identify itself by a unique reflected identification pulse series.

Passive tire pressure sensor and method

DOEpatents

Pfeifer, Kent Bryant; Williams, Robert Leslie; Waldschmidt, Robert Lee; Morgan, Catherine Hook

2007-09-04

A surface acoustic wave device includes a micro-machined pressure transducer for monitoring tire pressure. The device is configured having a micro-machined cavity that is sealed with a flexible conductive membrane. When an external tire pressure equivalent to the cavity pressure is detected, the membrane makes contact with ridges on the backside of the surface acoustic wave device. The ridges are electrically connected to conductive fingers of the device. When the detected pressure is correct, selected fingers on the device will be grounded producing patterned acoustic reflections to an impulse RF signal. When the external tire pressure is less than the cavity reference pressure, a reduced reflected signal to the receiver results. The sensor may further be constructed so as to identify itself by a unique reflected identification pulse series.

External electro-optic sampling utilizing a poled polymer asymmetric Fabry Perot cavity as an electro-optical probe tip

NASA Astrophysics Data System (ADS)

Chen, Kaixin; Zhang, Hongbo; Zhang, Daming; Yang, Han; Yi, Maobin

2002-09-01

External electro-optic sampling utilizing a poled polymer asymmetry Fabry-Perot cavity as electro-optic probe tip has been demonstrated. Electro-optical polymer spin coated on the high-reflectivity mirror (HRM) was corona poled. Thus, an asymmetric F-P cavity was formed based on the different reflectivity of the polymer and HRM and it converted the phase modulation that originates from electro-optic effect of the poled polymer to amplitude modulation, so only one laser beam is needed in this system. The principle of the sampling was analyzed by multiple reflection and index ellipsoid methods. A 1.2 GHz microwave signal propagating on coplanar waveguide transmission line was sampled, and the voltage sensitivity about 0.5 mV/ Hz was obtained.

A single-mode external cavity diode laser using an intra-cavity atomic Faraday filter with short-term linewidth <400 kHz and long-term stability of <1 MHz.

PubMed

Keaveney, James; Hamlyn, William J; Adams, Charles S; Hughes, Ifan G

2016-09-01

We report on the development of a diode laser system - the "Faraday laser" - using an atomic Faraday filter as the frequency-selective element. In contrast to typical external-cavity diode laser systems which offer tunable output frequency but require additional control systems in order to achieve a stable output frequency, our system only lases at a single frequency, set by the peak transmission frequency of the internal atomic Faraday filter. Our system has both short-term and long-term stability of less than 1 MHz, which is less than the natural linewidth of alkali-atomic D-lines, making similar systems suitable for use as a "turn-key" solution for laser-cooling experiments.

Reflectivity and transmissivity of a cavity coupled to a nanoparticle

NASA Astrophysics Data System (ADS)

Khan, M. A.; Farooq, K.; Hou, S. C.; Niaz, Shanawer; Yi, X. X.

2014-07-01

Any dielectric nanoparticle moving inside an optical cavity generates an optomechanical interaction. In this paper, we theoretically analyze the light scattering of an optomechanical cavity which strongly interacts with a dielectric nanoparticle. The cavity is driven by an external laser field. This interaction gives rise to different dynamics that can be used to cool, trap and levitate nanoparticle. We analytically calculate reflection and transmission rate of the cavity field, and study the time evolution of the intracavity field, momentum and position of the nanoparticle. We find the nanoparticle occupies a discrete position inside the cavity. This effect can be exploited to separate nanoparticle and couplings between classical particles and quantized fields.

Excitons in atomically thin 2D semiconductors and their applications

NASA Astrophysics Data System (ADS)

Xiao, Jun; Zhao, Mervin; Wang, Yuan; Zhang, Xiang

2017-06-01

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. In this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical means is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.

Steady-State Solutions Originating from an Enhanced Nonlinear Feedback in a Hybrid Opto-mechanical System

NASA Astrophysics Data System (ADS)

Fan, Qiu-Bo; Wang, Yi-Ru; Chen, Jin; Pan, Yue-Wu; Han, Bai-Ping; Fu, Chang-Bao; Sun, Yan

2017-06-01

The steady-state properties of a hybrid system are investigated in this paper. Many cold atoms in the four-level tripod configuration are confined in an optical cavity with a movable end mirror. The confined cold atoms are driven with two external classical fields and an internal cavity field. The internal cavity field is excited by an external driving field and shows a radiation pressure upon the movable end mirror. The coupling of atom-light and opto-mechanical interactions is enhanced by embedding a four-level atomic system in a typical opto-mechanical cavity. And an enhanced nonlinear feedback mechanism is offered by the enhanced coupling, which permits the observation of five and three steady-state solutions for relevant variables near two-photon resonance. The enhanced nonlinear feedback mechanism also allows us to observe the obvious difference in the double-EIT phenomenon between the atom-assisted opto-mechanical system and usual atom-field system.

Cellular automata in photonic cavity arrays.

PubMed

Li, Jing; Liew, T C H

2016-10-31

We propose theoretically a photonic Turing machine based on cellular automata in arrays of nonlinear cavities coupled with artificial gauge fields. The state of the system is recorded making use of the bistability of driven cavities, in which losses are fully compensated by an external continuous drive. The sequential update of the automaton layers is achieved automatically, by the local switching of bistable states, without requiring any additional synchronization or temporal control.

3D multiphysics modeling of superconducting cavities with a massively parallel simulation suite

DOE PAGES

Kononenko, Oleksiy; Adolphsen, Chris; Li, Zenghai; ...

2017-10-10

Radiofrequency cavities based on superconducting technology are widely used in particle accelerators for various applications. The cavities usually have high quality factors and hence narrow bandwidths, so the field stability is sensitive to detuning from the Lorentz force and external loads, including vibrations and helium pressure variations. If not properly controlled, the detuning can result in a serious performance degradation of a superconducting accelerator, so an understanding of the underlying detuning mechanisms can be very helpful. Recent advances in the simulation suite ace3p have enabled realistic multiphysics characterization of such complex accelerator systems on supercomputers. In this paper, we presentmore » the new capabilities in ace3p for large-scale 3D multiphysics modeling of superconducting cavities, in particular, a parallel eigensolver for determining mechanical resonances, a parallel harmonic response solver to calculate the response of a cavity to external vibrations, and a numerical procedure to decompose mechanical loads, such as from the Lorentz force or piezoactuators, into the corresponding mechanical modes. These capabilities have been used to do an extensive rf-mechanical analysis of dressed TESLA-type superconducting cavities. Furthermore, the simulation results and their implications for the operational stability of the Linac Coherent Light Source-II are discussed.« less

Longitudinal mode selection in a delay-line homogeneously broadened oscillator with a fast saturable amplifier.

PubMed

Fleyer, Michael; Horowitz, Moshe

2017-05-01

Homogeneously broadened delay-line oscillators such as lasers or optoelectronic oscillators (OEOs) can potentially oscillate in a large number of cavity modes that are supported by their amplifier bandwidth. In a continuous wave operating mode, the oscillating mode is selected between one or few cavity modes that experience the highest small-signal gain. In this manuscript, we show that the oscillation mode of a homogeneously broadened oscillator can be selected from a large number of modes in a frequency region that can be broader than the full width at half maximum of the effective cavity filter. The mode is selected by a short-time injection of an external signal into the oscillator. After the external signal is turned off, the oscillation is maintained in the selected mode even if this mode has a significantly lower small-signal gain than that of other cavity modes. The stability of the oscillation is obtained due to nonlinear saturation effect in the oscillator amplifier. We demonstrate, experimentally and theoretically, mode selection in a long cavity OEO. We could select any desired mode between 400 cavity modes while maintaining ultra-low phase noise in the selected mode and in the non-oscillating modes. No mode-hopping was observed during our maximum measurement duration of about 24 hours.

3D multiphysics modeling of superconducting cavities with a massively parallel simulation suite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kononenko, Oleksiy; Adolphsen, Chris; Li, Zenghai

Radiofrequency cavities based on superconducting technology are widely used in particle accelerators for various applications. The cavities usually have high quality factors and hence narrow bandwidths, so the field stability is sensitive to detuning from the Lorentz force and external loads, including vibrations and helium pressure variations. If not properly controlled, the detuning can result in a serious performance degradation of a superconducting accelerator, so an understanding of the underlying detuning mechanisms can be very helpful. Recent advances in the simulation suite ace3p have enabled realistic multiphysics characterization of such complex accelerator systems on supercomputers. In this paper, we presentmore » the new capabilities in ace3p for large-scale 3D multiphysics modeling of superconducting cavities, in particular, a parallel eigensolver for determining mechanical resonances, a parallel harmonic response solver to calculate the response of a cavity to external vibrations, and a numerical procedure to decompose mechanical loads, such as from the Lorentz force or piezoactuators, into the corresponding mechanical modes. These capabilities have been used to do an extensive rf-mechanical analysis of dressed TESLA-type superconducting cavities. Furthermore, the simulation results and their implications for the operational stability of the Linac Coherent Light Source-II are discussed.« less

Supersonic Beam Observations of Semiconductor Clusters.

DTIC Science & Technology

1987-08-31

laser vaporization C 6 0 molecule, soccerball structure contains cenLrai cavity 20, ASIT"RACT’ (Contms an .evse &I if rvcwumV sodIdwnttY by block...Brucat, S. Yang, C.L. Pettiette, M.J. Craycraft, and R.E. Smalley, Proc. of the International Symposium on the Physics and Chemistry of Small Clusters

Optoelectronic Integration

DTIC Science & Technology

1992-03-20

34 Interband Transitions in InGaAs/GaAs Strained Layer Superlattices ," J. of Vac. Sci and Technol. B, Vol. 7(5), pp. 1106-1110, 1989. 33 B. Kh...2 II. C. Resonant Cavity-Enhanced Photodetectors ................................ .............. 3 II. D. Wavelength Selective Optoelectronic...Simultions of Electronic States in Semiconductor Quantum Wells and Superlattices under Electrical Field ................................ ....... 5 II. G . G

Nonlinear optics in organic cavity polaritons (Conference Presentation)

NASA Astrophysics Data System (ADS)

Singer, Kenneth D.; Liu, Bin; Crescimanno, Michael; Twieg, Robert J.

2017-02-01

Coupling between excitons belonging to organic dyes and photons in a microcavities forming cavity polaritons have been receiving attention for their fundamental interest as well as potential applications in coherent light sources. Organic materials are of particular interest as the coupling is particularly strong due to the large oscillator strength of conjugated organic molecules. The resulting coupling in organic materials is routinely in the strong regime. Ultrastrong coupling between photons and excitons in microcavities containing organic dyes and semiconductors has been recently observed in room temperature. We have studied the coupling between cavity pairs in the ultrastrong regime and found that the high order terms in the modified Jaynes-Cummings model result in broken degeneracy between the symmetric and antisymmetric modes. The unusually strong coupling between cavity photons and organic excitons dovetail with the robust nonlinear optical responses of the same materials. This provides a new and promising hybrid material for photonics. We report on measurements of photorefraction in organic cavities containing a derivative of the photorefractive organic glass based on 2-dicyanomethylene-3-cyano-2,5-dihydrofuran (DCDHF).

Near-infrared strong coupling between metamaterials and epsilon-near-zero modes in degenerately doped semiconductor nanolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campione, Salvatore; Wendt, Joel R.; Keeler, Gordon Arthur

Epsilon-near-zero (ENZ) modes provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a strongly coupled system at near-infrared frequencies comprising plasmonic metamaterial resonators and ENZ modes supported by degenerately doped semiconductor nanolayers. In strongly coupled systems that combine optical cavities and intersubband transitions, the polariton splitting (i.e., the ratio of Rabi frequency to bare cavity frequency) scales with the square root of the wavelength, thus favoring the long-wavelength regime. In contrast, we observe that the polariton splitting in ENZ/metamaterial resonator systems increases linearly with the thickness of the nanolayer supporting the ENZ modes.more » In this work, we employ an indium-tin-oxide nanolayer and observe a large experimental polariton splitting of approximately 30% in the near-infrared. As a result, this approach opens up many promising applications, including nonlinear optical components and tunable optical filters based on controlling the polariton splitting by adjusting the frequency of the ENZ mode.« less

Near-infrared strong coupling between metamaterials and epsilon-near-zero modes in degenerately doped semiconductor nanolayers

DOE PAGES

Campione, Salvatore; Wendt, Joel R.; Keeler, Gordon Arthur; ...

2016-01-14

Epsilon-near-zero (ENZ) modes provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a strongly coupled system at near-infrared frequencies comprising plasmonic metamaterial resonators and ENZ modes supported by degenerately doped semiconductor nanolayers. In strongly coupled systems that combine optical cavities and intersubband transitions, the polariton splitting (i.e., the ratio of Rabi frequency to bare cavity frequency) scales with the square root of the wavelength, thus favoring the long-wavelength regime. In contrast, we observe that the polariton splitting in ENZ/metamaterial resonator systems increases linearly with the thickness of the nanolayer supporting the ENZ modes.more » In this work, we employ an indium-tin-oxide nanolayer and observe a large experimental polariton splitting of approximately 30% in the near-infrared. As a result, this approach opens up many promising applications, including nonlinear optical components and tunable optical filters based on controlling the polariton splitting by adjusting the frequency of the ENZ mode.« less

Noise and noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode

NASA Astrophysics Data System (ADS)

Wen, Pengyue; Sanchez, Michael; Gross, Matthias; Esener, Sadik C.

2003-05-01

In this paper, the noise properties of vertical cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode are studied. Expressions for noise sources contributing to the total noise detected at amplifier output are derived, based on the photon statistics master equations. The noise figure, defined as the degradation of signal-to-noise ratio (SNR), is analyzed using the assumption that spontaneous emission-signal beat noise dominates. The analysis shows that the noise figure of reflection mode VCSOAs has the same values as that in transmission mode as long as amplifier gain is high (G>>1). Furthermore, simulations depict the dependence of noise figure on device parameters and bias conditions, as well as reveal the importance of the low reflectivity front mirror and the high reflectivity rear mirror for low noise operation. In addition, the noise figure analysis results are compared with experimental measurements, in which amplified spontaneous emission (ASE) power is measured by an optical spectrum analyzer and the noise figure is obtained from the ASE power and the amplifier gain. The measured data are in good agreement with the theoretical predictions.

External and internal anatomy of mandibular molars.

PubMed

Rocha, L F; Sousa Neto, M D; Fidel, S R; da Costa, W F; Pécora, J D

1996-01-01

The external and internal anatomy of 628 extracted, mandibular first and second molars was studied. The external anatomy was studied by measuring each tooth and by observing the direction of the root curvatures from the facial surface. The internal anatomy of the pulp cavity was studied by a method of making the teeth translucent.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

The effect of acoustic forcing on an airfoil tonal noise mechanism.

PubMed

Schumacher, Karn L; Doolan, Con J; Kelso, Richard M

2014-08-01

The response of the boundary layer over an airfoil with cavity to external acoustic forcing, across a sweep of frequencies, was measured. The boundary layer downstream of the cavity trailing edge was found to respond strongly and selectively at the natural airfoil tonal frequencies. This is considered to be due to enhanced feedback. However, the shear layer upstream of the cavity trailing edge did not respond at these frequencies. These findings confirm that an aeroacoustic feedback loop exists between the airfoil trailing edge and a location near the cavity trailing edge.

Adiabatic transfer of energy fluctuations between membranes inside an optical cavity

NASA Astrophysics Data System (ADS)

Garg, Devender; Chauhan, Anil K.; Biswas, Asoka

2017-08-01

A scheme is presented for the adiabatic transfer of average fluctuations in the phonon number between two membranes in an optical cavity. We show that by driving the cavity modes with external time-delayed pulses, one can obtain an effect analogous to stimulated Raman adiabatic passage in the atomic systems. The adiabatic transfer of fluctuations from one membrane to the other is attained through a "dark" mode, which is robust against decay of the mediating cavity mode. The results are supported with analytical and numerical calculations with experimentally feasible parameters.

Comparative investigations of anatomy and physiology in mammalian noses (Homo sapiens--Artiodactyla).

PubMed

Grützenmacher, S; Robinson, D M; Sevecke, J; Mlynski, G; Beule, A G

2011-03-01

Knowledge of airflow in animal noses is sparse. Such knowledge could be important for selection of animal models used in environmental studies. From the phylogenetic and ontogenetic point of view, a comparison between the animal and human nose is interesting. Nose models of 5 even-toed ungulate species (he-goat, sheep, cow, roebuck, wild boar) and two humans (new born infant and adult) were examined. Anatomical and physiological features of the nasal cavities of all species were compared. All models were rinsed with water and the flow was visualized for observation. Geometric and rhinoresistometric measurements were then performed. Even-toed ungulates have two turbinates directly in the main part of the nasal airflow (respiratory turbinates) and a different number of turbinates in a so-called dead space of the nasal airflow above the nasopharyngeal duct (ethmoidal turbinates). The latter correspond with the upper and middle turbinate in analogy to the human nose. Respiratory turbinates of even-toed ungulates insert immediately behind the external nasal ostium. Thus, the whole nasal cavity acts as a functional area with the exception of a small area acting as dead space only detectable in ruminants, possibly indicating a small evolutionary progress from suinae to bovidae. The shape of the animal nasal cavity is stretched and flat. The airflow runs nearly completely turbulent through the nose. The nasal cavity in the adult human is relatively short and high. The area between the external nasal ostium and the head of the inferior turbinate is called inflow area. It distributes the airflow over the whole nasal cross section and generates a turbulent flow. So the airflow is prepared to contact the mucosa in the functional area (turbinate area). The morphology of the inflow area is approximately formed by the shape of the external nose. The nasal cavity of a newborn child is also stretched and flat and more similar to the nasal shape of the investigated animals. The inflow area in the newborn nose is not yet developed and corresponds with the growing external newborn nose. One can hypothesize that the inflow area in human noses is a morphological adaptation in the changed length-height-ratio of the nasal cavity.

Voyager electronic parts radiation program, volume 1

NASA Technical Reports Server (NTRS)

Stanley, A. G.; Martin, K. E.; Price, W. E.

1977-01-01

The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized.

Semiconductor diode with external field modulation

DOEpatents

Nasby, Robert D.

2000-01-01

A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

Semiconductor meta-surface based perfect light absorber

NASA Astrophysics Data System (ADS)

Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

2017-04-01

We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

Wafer defect detection by a polarization-insensitive external differential interference contrast module.

PubMed

Nativ, Amit; Feldman, Haim; Shaked, Natan T

2018-05-01

We present a system that is based on a new external, polarization-insensitive differential interference contrast (DIC) module specifically adapted for detecting defects in semiconductor wafers. We obtained defect signal enhancement relative to the surrounding wafer pattern when compared with bright-field imaging. The new DIC module proposed is based on a shearing interferometer that connects externally at the output port of an optical microscope and enables imaging thin samples, such as wafer defects. This module does not require polarization optics (such as Wollaston or Nomarski prisms) and is insensitive to polarization, unlike traditional DIC techniques. In addition, it provides full control of the DIC shear and orientation, which allows obtaining a differential phase image directly on the camera (with no further digital processing) while enhancing defect detection capabilities, even if the size of the defect is smaller than the resolution limit. Our technique has the potential of future integration into semiconductor production lines.

Prediction of the Lorentz Force Detuning and pressure sensitivity for a Pillbox cavity

DOE PAGES

Parise, M.

2018-05-18

The Lorentz Force Detuning (LFD) and the pressure sensitivity are two critical concerns during the design of a Superconducting Radio Frequency (SRF) cavity resonator. The mechanical deformation of the bare Niobium cavity walls, due to the electromagnetic fields and fluctuation of the external pressure in the Helium bath, can dynamically and statically detune the frequency of the cavity and can cause beam phase errors. The frequency shift can be compensated by additional RF power, that is required to maintain the accelerating gradient, or by sophisticated tuning mechanisms and control-compensation algorithms. Passive stiffening is one of the simplest and most effectivemore » tools that can be used during the early design phase, capable of satisfying the Radio Frequency (RF) requisites. This approach requires several multiphysics simulations as well as a deep mechanical and RF knowledge of the phenomena involved. In this paper, is presented a new numerical model for a pillbox cavity that can predict the frequency shifts caused by the LFD and external pressure. This method allows to greatly reduce the computational effort, which is necessary to meet the RF requirements and to keep track of the frequency shifts without using the time consuming multiphysics simulations.« less

Prediction of the Lorentz Force Detuning and pressure sensitivity for a Pillbox cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parise, M.

The Lorentz Force Detuning (LFD) and the pressure sensitivity are two critical concerns during the design of a Superconducting Radio Frequency (SRF) cavity resonator. The mechanical deformation of the bare Niobium cavity walls, due to the electromagnetic fields and fluctuation of the external pressure in the Helium bath, can dynamically and statically detune the frequency of the cavity and can cause beam phase errors. The frequency shift can be compensated by additional RF power, that is required to maintain the accelerating gradient, or by sophisticated tuning mechanisms and control-compensation algorithms. Passive stiffening is one of the simplest and most effectivemore » tools that can be used during the early design phase, capable of satisfying the Radio Frequency (RF) requisites. This approach requires several multiphysics simulations as well as a deep mechanical and RF knowledge of the phenomena involved. In this paper, is presented a new numerical model for a pillbox cavity that can predict the frequency shifts caused by the LFD and external pressure. This method allows to greatly reduce the computational effort, which is necessary to meet the RF requirements and to keep track of the frequency shifts without using the time consuming multiphysics simulations.« less

Prediction of the Lorentz Force Detuning and pressure sensitivity for a Pillbox cavity

NASA Astrophysics Data System (ADS)

Parise, M.

2018-05-01

The Lorentz Force Detuning (LFD) and the pressure sensitivity are two critical concerns during the design of a Superconducting Radio Frequency (SRF) cavity resonator. The mechanical deformation of the bare Niobium cavity walls, due to the electromagnetic fields and fluctuation of the external pressure in the Helium bath, can dynamically and statically detune the frequency of the cavity and can cause beam phase errors. The frequency shift can be compensated by additional RF power, that is required to maintain the accelerating gradient, or by sophisticated tuning mechanisms and control-compensation algorithms. Passive stiffening is one of the simplest and most effective tools that can be used during the early design phase, capable of satisfying the Radio Frequency (RF) requisites. This approach requires several multiphysics simulations as well as a deep mechanical and RF knowledge of the phenomena involved. In this paper, is presented a new numerical model for a pillbox cavity that can predict the frequency shifts caused by the LFD and external pressure. This method allows to greatly reduce the computational effort, which is necessary to meet the RF requirements and to keep track of the frequency shifts without using the time consuming multiphysics simulations.

Prediction of the Lorentz Force Detuning and Pressure Sensitivity for a Pillbox Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parise, M.

2018-04-23

The Lorentz Force Detuning (LFD) and the pressure sensitivity are two critical concerns during the design of a Superconducting Radio Frequency (SRF) cavity resonator. The mechanical deformation of the bare Niobium cavity walls, due to the electromagnetic fields and fluctuation of the external pressure in the Helium bath, can dynamically and statically detune the frequency of the cavity and can cause beam phase errors. The frequency shift can be compensated by additional RF power, that is required to maintain the accelerating gradient, or by sophisticated tuning mechanisms and control-compensation algorithms. Passive stiffening is one of the simplest and most effectivemore » tools that can be used during the early design phase, capable of satisfying the Radio Frequency (RF) requisites. This approach requires several multiphysics simulations as well as a deep mechanical and RF knowledge of the phenomena involved. In this paper, is presented a new numerical model for a pillbox cavity that can predict the frequency shifts caused by the LFD and external pressure. This method allows to greatly reduce the computational effort, which is necessary to meet the RF requirements and to keep track of the frequency shifts without using the time consuming multiphysics simulations.« less

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability

NASA Astrophysics Data System (ADS)

Parali, Ufuk; Sheng, Xin; Minassian, Ara; Tawy, Goronwy; Sathian, Juna; Thomas, Gabrielle M.; Damzen, Michael J.

2018-03-01

We report the first experimental demonstration of a wavelength tunable passively Q-switched red-diode-end pumped Alexandrite laser using a semiconductor saturable absorber mirror (SESAM). We present the results of the study of passive SESAM Q-switching and wavelength-tuning in continuous diode-pumped Alexandrite lasers in both linear cavity and X-cavity configurations. In the linear cavity configuration, pulsed operation up to 27 kHz repetition rate in fundamental TEM00 mode was achieved and maximum average power was 41 mW. The shortest pulse generated was 550 ns (FWHM) and the Q-switched wavelength tuning band spanned was between 740 nm and 755 nm. In the X-cavity configuration, a higher average power up to 73 mW, and obtained with higher pulse energy 6 . 5 μJ at 11.2 kHz repetition rate, in fundamental TEM00 mode with excellent spatial quality M2 < 1 . 1. The Q-switched wavelength tuning band spanned was between 775 nm and 781 nm.

Enhancement of the spontaneous emission in subwavelength quasi-two-dimensional waveguides and resonators

NASA Astrophysics Data System (ADS)

Tokman, Mikhail; Long, Zhongqu; AlMutairi, Sultan; Wang, Yongrui; Belkin, Mikhail; Belyanin, Alexey

2018-04-01

We consider a quantum-electrodynamic problem of the spontaneous emission from a two-dimensional (2D) emitter, such as a quantum well or a 2D semiconductor, placed in a quasi-2D waveguide or cavity with subwavelength confinement in one direction. We apply the Heisenberg-Langevin approach, which includes dissipation and fluctuations in the electron ensemble and in the electromagnetic field of a cavity on equal footing. The Langevin noise operators that we introduce do not depend on any particular model of dissipative reservoir and can be applied to any dissipation mechanism. Moreover, our approach is applicable to nonequilibrium electron systems, e.g., in the presence of pumping, beyond the applicability of the standard fluctuation-dissipation theorem. We derive analytic results for simple but practically important geometries: strip lines and rectangular cavities. Our results show that a significant enhancement of the spontaneous emission, by a factor of order 100 or higher, is possible for quantum wells and other 2D emitters in a subwavelength cavity.

Dynamics of a vertical cavity quantum cascade phonon laser structure

PubMed Central

Maryam, W.; Akimov, A. V.; Campion, R. P.; Kent, A. J.

2013-01-01

Driven primarily by scientific curiosity, but also by the potential applications of intense sources of coherent sound, researchers have targeted the phonon laser (saser) since the invention of the optical laser over 50 years ago. Here we fabricate a vertical cavity structure designed to operate as a saser oscillator device at a frequency of 325 GHz. It is based on a semiconductor superlattice gain medium, inside a multimode cavity between two acoustic Bragg reflectors. We measure the acoustic output of the device as a function of time after applying electrical pumping. The emission builds in intensity reaching a steady state on a timescale of order 0.1 μs. We show that the results are consistent with a model of the dynamics of a saser cavity exactly analogous to the models used for describing laser dynamics. We also obtain estimates for the gain coefficient, steady-state acoustic power output and efficiency of the device. PMID:23884078

Development of a RadFET Linear Array for Intracavitary in vivo Dosimetry During External Beam Radiotherapy and Brachytherapy

NASA Astrophysics Data System (ADS)

Price, R. A.; Benson, C.; Joyce, M. J.; Rodgers, K.

2004-08-01

We present the details of a new linear array dosimeter consisting of a chain of semiconductors mounted on an ultra-thin (50 /spl mu/m thick) flexible substrate and housed in an intracavitary catheter. The semiconductors, manufactured by NMRC Cork, have not been packaging and incorporate a passivation layer that allows them to be mounted on the substrate using flip-chip-bonding. This paper reports, for the first time, the construction of a multiple (ten) detector array suited to in vivo dosimetry in the rectum, esophagus and vagina during external beam radiotherapy, as well as being adaptable to in vivo dosimetry during brachytherapy and diagnostic radiology.

Cues for cavity nesters: investigating relevant zeitgebers for emerging leafcutting bees, Megachile rotundata

USDA-ARS?s Scientific Manuscript database

Emerging insects rely on external cues to synchronize themselves with the environment. Thermoperiod has been identified as an important cue and may be important for insects that emerge from light-restricted habitats. The alfalfa leafcutting bee, Megachile rotundata, a cavity-nesting bee, undergoes d...

Mahan polaritons and their lifetime due to hole recoil

NASA Astrophysics Data System (ADS)

Baeten, Maarten; Wouters, Michiel

2015-11-01

We present a theoretical study on polaritons in doped semiconductor microcavities, focussing on a cavity mode that is resonant with the Fermi edge. In agreement with experimental results, the strong light-matter coupling is maintained under very high doping within our ladder diagram approximation. In particular, we find that the polaritons result from the strong admixing of the cavity mode with the Mahan exciton. The upper Mahan polariton, lying in the electron-hole continuum, always remains visible and has a linewidth due to free interband electron-hole creation. The lower Mahan polariton acquires a finite lifetime due to relaxation of the valence band hole if the electron density exceeds a certain critical value. However, if the Rabi splitting exceeds the inverse hole recoil time, the lower polariton lifetime is only limited by the cavity properties.

10-Gb/s direct modulation of polymer-based tunable external cavity lasers.

PubMed

Choi, Byung-Seok; Oh, Su Hwan; Kim, Ki Soo; Yoon, Ki-Hong; Kim, Hyun Soo; Park, Mi-Ran; Jeong, Jong Sool; Kwon, O-Kyun; Seo, Jun-Kyu; Lee, Hak-Kyu; Chung, Yun C

2012-08-27

We demonstrate a directly-modulated 10-Gb/s tunable external cavity laser (ECL) fabricated by using a polymer Bragg reflector and a high-speed superluminescent diode (SLD). The tuning range and output power of this ECL are measured to be >11 nm and 2.6 mW (@ 100 mA), respectively. We directly modulate this laser at 10 Gb/s and transmit the modulated signal over 20 km of standard single-mode fiber. The power penalty is measured to be <2.8 dB at the bit-error rate (BER) of 10(-10).

Tapered optical fiber tip probes based on focused ion beam-milled Fabry-Perot microcavities

NASA Astrophysics Data System (ADS)

André, Ricardo M.; Warren-Smith, Stephen C.; Becker, Martin; Dellith, Jan; Rothhardt, Manfred; Zibaii, M. I.; Latifi, H.; Marques, Manuel B.; Bartelt, Hartmut; Frazão, Orlando

2016-09-01

Focused ion beam technology is combined with dynamic chemical etching to create microcavities in tapered optical fiber tips, resulting in fiber probes for temperature and refractive index sensing. Dynamic chemical etching uses hydrofluoric acid and a syringe pump to etch standard optical fibers into cone structures called tapered fiber tips where the length, shape, and cone angle can be precisely controlled. On these tips, focused ion beam is used to mill several different types of Fabry-Perot microcavities. Two main cavity types are initially compared and then combined to form a third, complex cavity structure. In the first case, a gap is milled on the tapered fiber tip which allows the external medium to penetrate the light guiding region and thus presents sensitivity to external refractive index changes. In the second, two slots that function as mirrors are milled on the tip creating a silica cavity that is only sensitive to temperature changes. Finally, both cavities are combined on a single tapered fiber tip, resulting in a multi-cavity structure capable of discriminating between temperature and refractive index variations. This dual characterization is performed with the aid of a fast Fourier transform method to separate the contributions of each cavity and thus of temperature and refractive index. Ultimately, a tapered optical fiber tip probe with sub-standard dimensions containing a multi-cavity structure is projected, fabricated, characterized and applied as a sensing element for simultaneous temperature and refractive index discrimination.

A multi-wavelength (u.v. to visible) laser system for early detection of oral cancer

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Leszczyński, M.; Slight, T. J.; Meredith, W.; Schemmann, M.; Moseley, H.; Woods, J. A.; Valentine, R.; Kalra, S.; Mossey, P.; Theaker, E.; Macluskey, M.; Mimnagh, G.; Mimnagh, W.

2015-03-01

A multi-wavelength (360nm - 440nm), real-time Photonic Cancer Detector (PCD) optical system based on GaN semiconductor laser technology is outlined. A proof of concept using blue laser technology for early detection of cancer has already been tested and proven for esophageal cancer. This concept is expanded to consider a wider range of wavelengths and the PCD will initially be used for early diagnosis of oral cancers. The PCD creates an image of the oral cavity (broad field white light detection) and maps within the oral cavity any suspicious lesions with high sensitivity using a narrow field tunable detector.

Excitons in atomically thin 2D semiconductors and their applications

DOE PAGES

Xiao, Jun; Zhao, Mervin; Wang, Yuan; ...

2017-01-01

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS 2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. Here in this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical meansmore » is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.« less

Robust exciton-polariton Rabi splitting in graphene nano ribbons: the means of two-coupled semiconductor microcavities

NASA Astrophysics Data System (ADS)

Imannezhad, Sanaz; Shojaei, Saeid

2018-04-01

Recent work on the exciton-photon coupling is presented. The proposed structure is a two-coupled semiconductor microcavity, composed of distributed Bragg reflectors, each consists of Si3N4 / SiO2, AlAs / Al0.1Ga0.9As, and GaAs/AlAs. Assuming that armchair graphene nanoribbon is located in the maximum of electric field amplitude inside the first semiconductor microcavity, the transfer matrix method is used to obtain the upper and lower polariton (UP and LP) branches and angle-dependent reflectance spectrum. A clear anticrossing between the neutral excitons and the cavity modes is observed for different polarization states. The obtained magnitude of splitting from the results is 10 to 12 meV, which indicates the possibility of enhancing the vacuum Rabi splitting for the proposed structure. This can pave the ways toward implementation of graphene in polaritonic devices.

Semiconductor Laser Joint Study Program with Rome Laboratory

DTIC Science & Technology

1994-09-01

VCSELs 3.3 Laser Wafer Growth by Molecular Beam Epitaxy 8 The VCSEL structures were grown by molecular beam ...cavity surface emittimg lasers ( VCSEL ), Optical 40 interconnects, Moelcular beam epitaxy It CECOOE 17. SECURfTY CLASWICATION SECURFlY CLASSIFICATION 1 Q...7 3.3 Laser Wafer Growth by Molecular Beam Epitax. ............ 8 3.4 VCSEL Fabrication Process ................................................

The influence of an external cavity on the emission spectrum of a mercury germicidal lamp

NASA Astrophysics Data System (ADS)

Solomonov, V. I.; Surkov, Yu. S.; Gorbunkov, V. I.

2016-09-01

The spectrum of emission from the cylindrical duralumin cavity of a TUV 8wG8 T5 UV industrial germicidal mercury lamp is studied. It is shown that, due to reflection from the inner surface of the cavity and reabsorption in the gas discharge, the resonance line of a mercury atom is significantly weakened. The dependence of the resonance line intensity on the discharge current has a maximum, and the discharge current corresponding to the intensity maximum depends on the reflection coefficient of the inner surface of the cavity.

Self-localized structures in vertical-cavity surface-emitting lasers with external feedback.

PubMed

Paulau, P V; Gomila, D; Ackemann, T; Loiko, N A; Firth, W J

2008-07-01

In this paper, we analyze a model of broad area vertical-cavity surface-emitting lasers subjected to frequency-selective optical feedback. In particular, we analyze the spatio-temporal regimes arising above threshold and the existence and dynamical properties of cavity solitons. We build the bifurcation diagram of stationary self-localized states, finding that branches of cavity solitons emerge from the degenerate Hopf bifurcations marking the homogeneous solutions with maximal and minimal gain. These branches collide in a saddle-node bifurcation, defining a maximum pump current for soliton existence that lies below the threshold of the laser without feedback. The properties of these cavity solitons are in good agreement with those observed in recent experiments.

Effects of Nasal Continuous Positive Airway Pressure and Cannula Use in the Neonatal Intensive Care Unit Setting

PubMed Central

Jatana, Kris R.; Oplatek, Agnes; Stein, Melanie; Phillips, Gary; Kang, D. Richard; Elmaraghy, Charles A.

2013-01-01

Objective To investigate the effects of nasal continuous positive airway pressure (CPAP) and cannula use in the neonatal intensive care unit. Design Cross-sectional study. Setting Tertiary care children’s hospital. Patients One hundred patients (200 nasal cavities), younger than 1 year, who received at least 7 days of nasal CPAP (n = 91) or cannula supplementation (n = 9) in the neonatal intensive care unit. Interventions External nasal examination and anterior nasal endoscopy with photographic documentation. Main Outcome Measures The incidence and characteristics of internal and external nasal findings of patients with nasal CPAP or cannula use. Results Nasal complications were seen in 12 of the 91 patients (13.2%) with at least 7 days of nasal CPAP exposure, while no complications were seen in the 9 patients with nasal cannula use alone. The external nasal finding of columellar necrosis, seen in 5 patients (5.5%), occurred as early as 10 days after nasal CPAP use. Incidence of intranasal findings attributed to CPAP use, in the 182 nostrils examined, included ulceration in 6 nasal cavities (3.3%), granulation in 3 nasal cavities (1.6%), and vestibular stenosis in 4 nasal cavities (2.2%). Intranasal complications were seen as early as 8 to 9 days after nasal CPAP administration. Nasal complications from CPAP were associated with lower Apgar scores at 1 (P = .02) and 5 (P = .06) minutes. Conclusions External or internal complications of nasal CPAP can be relatively frequent (13.2%) and can occur early, and patients with lower Apgar scores may be at higher risk. Close surveillance for potential complications should be considered during nasal CPAP use. PMID:20231649

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

Nonlinear generation of sum and difference frequency waves by two helicon waves in a semiconductor

NASA Astrophysics Data System (ADS)

Salimullah, M.; Ferdous, T.

1984-05-01

This paper presents a theoretical investigation of the nonlinear generation of electrostatic waves at the sum and the difference frequency when two high amplitude elliptically polarized helicon waves propagate along the direction of the externally applied static magnetic field in an n-type semiconductor. The nonlinearity arises through the ponderomotive force on electrons. It is noticed that the power conversion efficiency of the difference frequency generation is much larger than that of the sum frequency generation. The power conversion efficiency may be easily increased by increasing the density of electrons in the semiconductor.

Selenium semiconductor core optical fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, G. W.; Qian, Q., E-mail: qianqi@scut.edu.cn; Peng, K. L.

2015-02-15

Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Suchmore » crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.« less

Screenable contact structure and method for semiconductor devices

DOEpatents

Ross, Bernd

1980-08-26

An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal frit. The ink is screened onto the semiconductor surface in the desired pattern and is heated to a temperature sufficient to cause the metal frit to become liquid. The metal frit dissolves some of the metal powder and densifies the structure by transporting the dissolved metal powder in a liquid sintering process. The sintering process typically may be carried out in any type of atmosphere. A small amount of dopant or semiconductor material may be added to the ink systems to achieve particular results if desired.

Parity Deformed Jaynes-Cummings Model: “Robust Maximally Entangled States”

PubMed Central

Dehghani, A.; Mojaveri, B.; Shirin, S.; Faseghandis, S. Amiri

2016-01-01

The parity-deformations of the quantum harmonic oscillator are used to describe the generalized Jaynes-Cummings model based on the λ-analog of the Heisenberg algebra. The behavior is interestingly that of a coupled system comprising a two-level atom and a cavity field assisted by a continuous external classical field. The dynamical characters of the system is explored under the influence of the external field. In particular, we analytically study the generation of robust and maximally entangled states formed by a two-level atom trapped in a lossy cavity interacting with an external centrifugal field. We investigate the influence of deformation and detuning parameters on the degree of the quantum entanglement and the atomic population inversion. Under the condition of a linear interaction controlled by an external field, the maximally entangled states may emerge periodically along with time evolution. In the dissipation regime, the entanglement of the parity deformed JCM are preserved more with the increase of the deformation parameter, i.e. the stronger external field induces better degree of entanglement. PMID:27917882

Quantum Dots

NASA Astrophysics Data System (ADS)

Tartakovskii, Alexander

2012-07-01

Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by Lithographic Techniques: III-V Semiconductors and Carbon: 15. Electrically controlling single spin coherence in semiconductor nanostructures Y. Dovzhenko, K. Wang, M. D. Schroer and J. R. Petta; 16. Theory of electron and nuclear spins in III-V semiconductor and carbon-based dots H. Ribeiro and G. Burkard; 17. Graphene quantum dots: transport experiments and local imaging S. Schnez, J. Guettinger, F. Molitor, C. Stampfer, M. Huefner, T. Ihn and K. Ensslin; Part VI. Single Dots for Future Telecommunications Applications: 18. Electrically operated entangled light sources based on quantum dots R. M. Stevenson, A. J. Bennett and A. J. Shields; 19. Deterministic single quantum dot cavities at telecommunication wavelengths D. Dalacu, K. Mnaymneh, J. Lapointe, G. C. Aers, P. J. Poole, R. L. Williams and S. Hughes; Index.

Image Guidance in External Beam Accelerated Partial Breast Irradiation: Comparison of Surrogates for the Lumpectomy Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasan, Yasmin; Kim, Leonard; Martinez, Alvaro

Purpose: To compare localization of the lumpectomy cavity by using breast surface matching vs. clips for image-guided external beam accelerated partial breast irradiation. Methods and Materials: Twenty-seven patients with breast cancer with two computed tomography (CT) scans each had three CT registrations performed: (1) to bony anatomy, (2) to the center of mass (COM) of surgical clips, and (3) to the breast surface. The cavity COM was defined in both the initial and second CT scans after each type of registration, and distances between COMs ({delta}COM{sub Bone}, {delta}COM{sub Clips}, and {delta}COM{sub Surface}) were determined. Smaller {delta}COMs were interpreted as bettermore » localizations. Correlation coefficients were calculated for {delta}COM vs. several variables. Results: The {delta}COM{sub Bone} (mean, 7 {+-} 2 [SD] mm) increased with breast volume (r = 0.4; p = 0.02) and distance from the chest wall (r = 0.5; p = 0.003). Relative to bony registration, clip registration provided better localization ({delta}COM{sub Clips} < {delta}COM{sub Bone}) in 25 of 27 cases. Breast surface matching improved cavity localization ({delta}COM{sub Surface} < {delta}COM{sub Bone}) in 19 of 27 cases. Mean improvements ({delta}COM{sub Bone} - {delta}COM{sub ClipsorSurface}) were 4 {+-} 3 and 2 {+-} 4 mm, respectively. In terms of percentage of improvement ([{delta}COM{sub Bone} - {delta}COM{sub ClipsorSurface}]/{delta}COM{sub Bone}), only surface matching showed a correlation with breast volume. Clip localization outperformed surface registration for cavities located superior to the breast COM. Conclusions: Use of either breast surface or surgical clips as surrogates for the cavity results in improved localization in most patients compared with bony registration and may allow smaller planning target volume margins for external beam accelerated partial breast irradiation. Compared with surface registration, clip registration may be less sensitive to anatomic characteristics and therefore more broadly applicable.« less

Influence of thermal deformation in cavity mirrors on beam propagation characteristics of high-power slab lasers

NASA Astrophysics Data System (ADS)

Wang, Zhen; Xiao, Longsheng; Wang, Wei; Wu, Chao; Tang, Xiahui

2018-01-01

Owing to their good diffusion cooling and low sensitivity to misalignment, slab-shape negative-branch unstable-waveguide resonators are widely used for high-power lasers in industry. As the output beam of the resonator is astigmatic, an external beam shaping system is required. However, the transverse dimension of the cavity mirrors in the resonator is large. For a long-time operation, the heating of cavity mirrors can be non-uniform. This results in micro-deformation and a change in the radius of curvature of the cavity mirrors, and leads to an output beam of an offset optical axis of the resonator. It was found that a change in the radius of curvature of 0.1% (1 mm) caused by thermal deformation generates a transverse displacement of 1.65 mm at the spatial filter of the external beam shaping system, and an output power loss of more than 80%. This can potentially burn out the spatial filter. In order to analyze the effect of the offset optical axis of the beam on the external optical path, we analyzed the transverse displacement and rotational misalignments of the spatial filter. For instance, if the transverse displacement was 0.3 mm, the loss in the output power was 9.6% and a sidelobe appeared in the unstable direction. If the angle of rotation was 5°, the loss in the output power was 2%, and the poles were in the direction of the waveguide. Based on these results, by adjusting the bending mirror, the deviation angle of the output beam of the resonator cavity was corrected, in order to obtain maximum output power and optimal beam quality. Finally, the propagation characteristics of the corrected output beam were analyzed.

Toward precise site-controlling of self-assembled Ge quantum dots on Si microdisks.

PubMed

Wang, Shuguang; Zhang, Ningning; Chen, Peizong; Wang, Liming; Yang, Xinju; Jiang, Zuimin; Zhong, Zhenyang

2018-08-24

A feasible route is developed toward precise site-controlling of quantum dots (QDs) at the microdisk periphery, where most microdisk cavity modes are located. The preferential growth of self-assembled Ge QDs at the periphery of Si microdisks is discovered. Moreover, both the height and linear density of Ge QDs can be controlled by tuning the amount of deposited Ge and the microdisk size. The inherent mechanisms of these unique features are discussed, taking into account both the growth kinetics and thermodynamics. By growing Ge on the innovative Si microdisks with small protrusions at the disk periphery, the positioning of Ge QDs at the periphery can be exactly predetermined. Such a precise site-controlling of Ge QDs at the periphery enables the location of the QD right at the field antinodes of the cavity mode of the Si microdisk, thereby achieving spatial matching between QD and cavity mode. These results open a promising door to realize the semiconductor QD-microdisk systems with both spectral and spatial matching between QDs and microdisk cavity modes, which will be the promising candidates for exploring the fundamental features of cavity quantum electrodynamics and the innovative optoelectronic devices based on strong light-matter interaction.

High-pulse-energy mode-locked picosecond oscillator

NASA Astrophysics Data System (ADS)

Chao, Yang; Chen, Meng; Li, Gang

2014-02-01

We report on a high-pulse-energy solid-state picosecond Nd:YVO4 oscillator with cavity-dumping. The laser is end-pumped by an 808 nm laser diode and passively mode-locked with a semiconductor saturable absorption mirror (SESAM). In pure cw-mode-locking, this laser produced 2.5 W of average power at a pulse repetition rate of 40 MHz and pulse duration around 12 ps. A cavity dumping technique using an intra-cavity BBO electro-optic crystal to which bidirectional voltage was applied was adopted, effectively improving the cavity-dumping rate. Tunable high repetition rate from 100 kHz to 1 MHz was achieved. With electro-optic cavity dumper working at 1 MHz repetition rate, we achieved average power 594 mW. The laser includes a 5 mm long, a-cut, 0.5% doped Nd:YVO4 crystal with a 5-degree angle at one end face. Laser radiation is coupled out from the crystal end face with a 5-degree angle, without requiring insertion of a thin-film polarizer (TFP), thus simplifying the laser structure. This picosecond laser system has the advantages of compact structure and high stability, providing a good oscillator for regenerative amplifiers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wagner, Michael; Ma, Zhiwen; Martinek, Janna

An aspect of the present disclosure is a receiver for receiving radiation from a heliostat array that includes at least one external panel configured to form an internal cavity and an open face. The open face is positioned substantially perpendicular to a longitudinal axis and forms an entrance to the internal cavity. The receiver also includes at least one internal panel positioned within the cavity and aligned substantially parallel to the longitudinal axis, and the at least one internal panel includes at least one channel configured to distribute a heat transfer medium.

Frequency stability of maser oscillators operated with cavity Q. [hydrogen and rubidium masers

NASA Technical Reports Server (NTRS)

Tetu, M.; Tremblay, P.; Lesage, P.; Petit, P.; Audoin, C.

1982-01-01

The short term frequency stability of masers equipped with an external feedback loop to increase the cavity quality factor was studied. The frequency stability of a hydrogen and a rubidium maser were measured and compared with theoretical evaluation. It is shown that the frequency stability passes through an optimum when the cavity Q is varied. Long term fluctuations are discussed and the optimum mid term frequency stability achievably by small size active and passive H-masers is considered.

Screening-Engineered Field-Effect Solar Cells

DTIC Science & Technology

2012-01-01

virtually any semiconductor, including the promising but hard-to- dope metal oxides, sulfides, and phosphides.3 Prototype SFPV devices have been...MIS interface. Unfortu- nately, MIS cells, though sporting impressive efficiencies,4−6 typically have short operating lifetimes due to surface state...instability at the MIS interface.7 Methods aimed at direct field- effect “ doping ” of semiconductors, in which the voltage is externally applied to a gate

Effects of cavity dimensions, boundary layer, and temperature on cavity noise with emphasis on benchmark data to validate computational aeroacoustic codes

NASA Technical Reports Server (NTRS)

Ahuja, K. K.; Mendoza, J.

1995-01-01

This report documents the results of an experimental investigation on the response of a cavity to external flowfields. The primary objective of this research was to acquire benchmark of data on the effects of cavity length, width, depth, upstream boundary layer, and flow temperature on cavity noise. These data were to be used for validation of computational aeroacoustic (CAA) codes on cavity noise. To achieve this objective, a systematic set of acoustic and flow measurements were made for subsonic turbulent flows approaching a cavity. These measurements were conducted in the research facilities of the Georgia Tech research institute. Two cavity models were designed, one for heated flow and another for unheated flow studies. Both models were designed such that the cavity length (L) could easily be varied while holding fixed the depth (D) and width (W) dimensions of the cavity. Depth and width blocks were manufactured so that these dimensions could be varied as well. A wall jet issuing from a rectangular nozzle was used to simulate flows over the cavity.

3D hybrid integrated lasers for silicon photonics

NASA Astrophysics Data System (ADS)

Song, B.; Pinna, S.; Liu, Y.; Megalini, L.; Klamkin, J.

2018-02-01

A novel 3D hybrid integration platform combines group III-V materials and silicon photonics to yield high-performance lasers is presented. This platform is based on flip-chip bonding and vertical optical coupling integration. In this work, indium phosphide (InP) devices with monolithic vertical total internal reflection turning mirrors were bonded to active silicon photonic circuits containing vertical grating couplers. Greater than 2 mW of optical power was coupled into a silicon waveguide from an InP laser. The InP devices can also be bonded directly to the silicon substrate, providing an efficient path for heat dissipation owing to the higher thermal conductance of silicon compared to InP. Lasers realized with this technique demonstrated a thermal impedance as low as 6.2°C/W, allowing for high efficiency and operation at high temperature. InP reflective semiconductor optical amplifiers were also integrated with 3D hybrid integration to form integrated external cavity lasers. These lasers demonstrated a wavelength tuning range of 30 nm, relative intensity noise lower than -135 dB/Hz and laser linewidth of 1.5 MHz. This platform is promising for integration of InP lasers and photonic integrated circuits on silicon photonics.

Electrically-pumped 850-nm micromirror VECSELs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geib, Kent Martin; Peake, Gregory Merwin; Serkland, Darwin Keith

Vertical-external-cavity surface-emitting lasers (VECSELs) combine high optical power and good beam quality in a device with surface-normal output. In this paper, we describe the design and operating characteristics of an electrically-pumped VECSEL that employs a wafer-scale fabrication process and operates at 850 nm. A curved micromirror output coupler is heterogeneously integrated with AlGaAs-based semiconductor material to form a compact and robust device. The structure relies on flip-chip bonding the processed epitaxial material to an aluminum nitride mount; this heatsink both dissipates thermal energy and permits high frequency modulation using coplanar traces that lead to the VECSEL mesa. Backside emission ismore » employed, and laser operation at 850 nm is made possible by removing the entire GaAs substrate through selective wet etching. While substrate removal eliminates absorptive losses, it simultaneously compromises laser performance by increasing series resistance and degrading the spatial uniformity of current injection. Several aspects of the VECSEL design help to mitigate these issues, including the use of a novel current-spreading n type distributed Bragg reflector (DBR). Additionally, VECSEL performance is improved through the use of a p-type DBR that is modified for low thermal resistance.« less

Electrically pumped 850-nm micromirror VECSELs

NASA Astrophysics Data System (ADS)

Keeler, Gordon A.; Serkland, Darwin K.; Geib, Kent M.; Peake, Gregory M.; Mar, Alan

2005-03-01

Vertical-external-cavity surface-emitting lasers (VECSELs) combine high optical power and good beam quality in a device with surface-normal output. In this paper, we describe the design and operating characteristics of an electrically-pumped VECSEL that employs a wafer-scale fabrication process and operates at 850 nm. A curved micromirror output coupler is heterogeneously integrated with AlGaAs-based semiconductor material to form a compact and robust device. The structure relies on flip-chip bonding the processed epitaxial material to an aluminum nitride mount; this heatsink both dissipates thermal energy and permits high frequency modulation using coplanar traces that lead to the VECSEL mesa. Backside emission is employed, and laser operation at 850 nm is made possible by removing the entire GaAs substrate through selective wet etching. While substrate removal eliminates absorptive losses, it simultaneously compromises laser performance by increasing series resistance and degrading the spatial uniformity of current injection. Several aspects of the VECSEL design help to mitigate these issues, including the use of a novel current-spreading n type distributed Bragg reflector (DBR). Additionally, VECSEL performance is improved through the use of a p-type DBR that is modified for low thermal resistance.

Modulated phases of graphene quantum Hall polariton fluids

PubMed Central

Pellegrino, Francesco M. D.; Giovannetti, Vittorio; MacDonald, Allan H.; Polini, Marco

2016-01-01

There is a growing experimental interest in coupling cavity photons to the cyclotron resonance excitations of electron liquids in high-mobility semiconductor quantum wells or graphene sheets. These media offer unique platforms to carry out fundamental studies of exciton-polariton condensation and cavity quantum electrodynamics in a regime, in which electron–electron interactions are expected to play a pivotal role. Here, focusing on graphene, we present a theoretical study of the impact of electron–electron interactions on a quantum Hall polariton fluid, that is a fluid of magneto-excitons resonantly coupled to cavity photons. We show that electron–electron interactions are responsible for an instability of graphene integer quantum Hall polariton fluids towards a modulated phase. We demonstrate that this phase can be detected by measuring the collective excitation spectra, which is often at a characteristic wave vector of the order of the inverse magnetic length. PMID:27841346

Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode

NASA Astrophysics Data System (ADS)

Mastro, Michael A.; Kim, Chul Soo; Kim, Mijin; Caldwell, Josh; Holm, Ron T.; Vurgaftman, Igor; Kim, Jihyun; Eddy, Charles R., Jr.; Meyer, Jerry R.

2008-10-01

A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of ≈λ/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lost to internal refraction as guided light. Therefore, a 2D photonic crystal on the surface of the LED was used to diffract and thus redirect this guided light out of the semiconductor over several hundred microns. Additionally, the employment of a post-epitaxy ZnS 2D photonic crystal avoided the typical etching into the GaN:Mg contact layer, a procedure which can cause damage to the near surface.

Membrane projection lithography

DOEpatents

Burckel, David Bruce; Davids, Paul S; Resnick, Paul J; Draper, Bruce L

2015-03-17

The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission

NASA Astrophysics Data System (ADS)

Genty, Frédéric; Almuneau, Guilhem; Chusseau, Laurent; Wilk, Arnaud; Gaillard, Serge; Boissier, Guilhem; Grech, Pierre; Jacquet, Joel

1999-05-01

With the aim of fabricating vertical cavity semiconductor lasers (VCSEL), the molecular beam epitaxy growth of GaAsSb using two different element-V precursor sets has been first evaluated. Alloy compositions as well as ease of achieving lattice-matching are compared with both (As 2-Sb 4) or (As 2-Sb 2). Change in the growth mode process that depends on the precursor couple is presumed to influence strongly As and Sb incorporation rates thereby causing difficulties in reaching lattice-matching with Sb 4. The above study has allowed the fabrication of a fully doped 3 λ/2 monolithic Sb-based VCSEL on InP. The main devices performing at 77 K are a 200 nm wide stopband centered at 1.5 μm and a clear cavity resonance at 1.53 μm from which electroluminescence has been observed.

Silicon Alignment Pins: An Easy Way to Realize a Wafer-To-Wafer Alignment

NASA Technical Reports Server (NTRS)

Peralta, Alejandro (Inventor); Gill, John J. (Inventor); Toda, Risaku (Inventor); Lin, Robert H. (Inventor); Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Thomas, Bertrand (Inventor); Siles, Jose V. (Inventor); Lee, Choonsup (Inventor); Chattopadhyay, Goutam (Inventor)

2016-01-01

A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

A Digital Phase Lock Loop for an External Cavity Diode Laser

NASA Astrophysics Data System (ADS)

Wang, Xiao-Long; Tao, Tian-Jiong; Cheng, Bing; Wu, Bin; Xu, Yun-Fei; Wang, Zhao-Ying; Lin, Qiang

2011-08-01

A digital optical phase lock loop (OPLL) is implemented to synchronize the frequency and phase between two external cavity diode lasers (ECDL), generating Raman pulses for atom interferometry. The setup involves all-digital phase detection and a programmable digital proportional-integral-derivative (PID) loop in locking. The lock generates a narrow beat-note linewidth below 1 Hz and low phase-noise of 0.03rad2 between the master and slave ECDLs. The lock proves to be stable and robust, and all the locking parameters can be set and optimized on a computer interface with convenience, making the lock adaptable to various setups of laser systems.

Infrared near-field spectroscopy of trace explosives using an external cavity quantum cascade laser.

PubMed

Craig, Ian M; Taubman, Matthew S; Lea, A Scott; Phillips, Mark C; Josberger, Erik E; Raschke, Markus B

2013-12-16

Utilizing a broadly-tunable external cavity quantum cascade laser for scattering-type scanning near-field optical microscopy (s-SNOM), we measure infrared spectra of particles of explosives by probing characteristic nitro-group resonances in the 7.1-7.9 µm wavelength range. Measurements are presented with spectral resolution of 0.25 cm(-1), spatial resolution of 25 nm, sensitivity better than 100 attomoles, and at a rapid acquisition time of 90 s per spectrum. We demonstrate high reproducibility of the acquired s-SNOM spectra with very high signal-to-noise ratios and relative noise of <0.02 in self-homodyne detection.

Tunable External Cavity Quantum Cascade Lasers (EC-QCL): an application field for MOEMS based scanning gratings

NASA Astrophysics Data System (ADS)

Grahmann, Jan; Merten, André; Ostendorf, Ralf; Fontenot, Michael; Bleh, Daniela; Schenk, Harald; Wagner, Hans-Joachim

2014-03-01

In situ process information in the chemical, pharmaceutical or food industry as well as emission monitoring, sensitive trace detection and biological sensing applications would increasingly rely on MIR-spectroscopic anal­ysis in the 3 μm - 12 μm wavelength range. However, cost effective, portable, low power consuming and fast spectrometers with a wide tuning range are not available so far. To provide these MIR-spectrometer properties, the combination of quantum cascade lasers with a MOEMS scanning grating as wavelength selective element in the external cavity is addressed to provide a very compact and fast tunable laser source for spectroscopic analysis.

Littrow-type external-cavity blue laser for holographic data storage.

PubMed

Tanaka, Tomiji; Takahashi, Kazuo; Sako, Kageyasu; Kasegawa, Ryo; Toishi, Mitsuru; Watanabe, Kenjiro; Samuels, David; Takeya, Motonobu

2007-06-10

An external-cavity laser with a wavelength of 405 nm and an output of 80 mW has been developed for holographic data storage. The laser has three states: the first is a perfect single mode, whose coherent length is 14 m; the second is a three-mode state with a coherent length of 3 mm; and the third is a six-mode state with a coherent length of 0.3 mm. The first and second states are available for angular-multiplexing recording; all states are available for coaxial multiplexing recording. Due to its short wavelength, the recording density is higher than that of a 532 nm laser.

Simple, low-noise piezo driver with feed-forward for broad tuning of external cavity diode lasers.

PubMed

Doret, S Charles

2018-02-01

We present an inexpensive, low-noise (<260 μV rms , 0.1 Hz-100 kHz) design for a piezo driver suitable for frequency tuning of external-cavity diode lasers. This simple driver improves upon many commercially available drivers by incorporating circuitry to produce a "feed-forward" signal appropriate for making simultaneous adjustments to the piezo voltage and laser current, enabling dramatic improvements in a mode-hop-free laser frequency tuning range. We present the theory behind our driver's operation, characterize its output noise, and demonstrate its use in absorption spectroscopy on the rubidium D 1 line.

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

External-cavity beam combining of 4-channel quantum cascade lasers

NASA Astrophysics Data System (ADS)

Zhao, Yue; Zhang, Jin-Chuan; Zhou, Yu-Hong; Jia, Zhi-Wei; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

2017-09-01

We demonstrate an external-cavity (EC) beam combining of 4-channel quantum cascade lasers (QCLs) with an output coupler which makes different QCL beams propagating coaxially. A beam combining efficiency of 35% (up to 75% near threshold) is obtained with a beam quality M2 of 5.5. A peak power of 0.64 W is achieved at a wavelength of 4.7 μm. The differences of spot characteristic between coupled and uncoupled are also showed in this letter. The QCLs in this EC system do not have heat crosstalk so that the system can be used for high power beam combining of QCLs.

High-power waveguide resonator second harmonic device with external conversion efficiency up to 75%

NASA Astrophysics Data System (ADS)

Stefszky, M.; Ricken, R.; Eigner, C.; Quiring, V.; Herrmann, H.; Silberhorn, C.

2018-06-01

We report on a highly efficient waveguide resonator device for the production of 775 nm light using a titanium indiffused LiNbO3 waveguide resonator. When scanning the resonance, the device produces up to 110 mW of second harmonic power with 140 mW incident on the device—an external conversion efficiency of 75%. The cavity length is also locked, using a Pound–Drever–Hall type locking scheme, involving feedback to either the cavity temperature or the laser frequency. With laser frequency feedback, a stable output power of approximately 28 mW from a 52 mW pump is seen over one hour.

Cavity mode-width spectroscopy with widely tunable ultra narrow laser.

PubMed

Cygan, Agata; Lisak, Daniel; Morzyński, Piotr; Bober, Marcin; Zawada, Michał; Pazderski, Eugeniusz; Ciuryło, Roman

2013-12-02

We explore a cavity-enhanced spectroscopic technique based on determination of the absorbtion coefficient from direct measurement of spectral width of the mode of the optical cavity filled with absorbing medium. This technique called here the cavity mode-width spectroscopy (CMWS) is complementary to the cavity ring-down spectroscopy (CRDS). While both these techniques use information on interaction time of the light with the cavity to determine absorption coefficient, the CMWS does not require to measure very fast signals at high absorption conditions. Instead the CMWS method require a very narrow line width laser with precise frequency control. As an example a spectral line shape of P7 Q6 O₂ line from the B-band was measured with use of an ultra narrow laser system based on two phase-locked external cavity diode lasers (ECDL) having tunability of ± 20 GHz at wavelength range of 687 to 693 nm.

Intra-Cavity Total Reflection For High Sensitivity Measurement Of Optical Properties

DOEpatents

Pipino, Andrew Charles Rule

1999-11-16

An optical cavity resonator device is provided for conducting sensitive murement of optical absorption by matter in any state with diffraction-limited spatial resolution through utilization of total internal reflection within a high-Q (high quality, low loss) optical cavity. Intracavity total reflection generates an evanescent wave that decays exponentially in space at a point external to the cavity, thereby providing a localized region where absorbing materials can be sensitively probed through alteration of the Q-factor of the otherwise isolated cavity. When a laser pulse is injected into the cavity and passes through the evanescent state, an amplitude loss resulting from absorption is incurred that reduces the lifetime of the pulse in the cavity. By monitoring the decay of the injected pulse, the absorption coefficient of manner within the evanescent wave region is accurately obtained from the decay time measurement.

Intra-Cavity Total Reflection For High Sensitivity Measurement Of Optical Properties

DOEpatents

Pipino, Andrew C. R.; Hudgens, Jeffrey W.

1999-08-24

An optical cavity resonator device is provided for conducting sensitive murement of optical absorption by matter in any state with diffraction-limited spatial resolution through utilization of total internal reflection within a high-Q (high quality, low loss) optical cavity. Intracavity total reflection generates an evanescent wave that decays exponentially in space at a point external to the cavity, thereby providing a localized region where absorbing materials can be sensitively probed through alteration of the Q-factor of the otherwise isolated cavity. When a laser pulse is injected into the cavity and passes through the evanescent state, an amplitude loss resulting from absorption is incurred that reduces the lifetime of the pulse in the cavity. By monitoring the decay of the injected pulse, the absorption coefficient of manner within the evanescent wave region is accurately obtained from the decay time measurement.

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

PubMed Central

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

2015-01-01

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

PubMed

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

2015-02-03

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

Antepartum transabdominal amnioinfusion to facilitate external cephalic version after initial failure.

PubMed

Benifla, J L; Goffinet, F; Darai, E; Madelenat, P

1994-12-01

Transabdominal amnioinfusion can be used to facilitate external cephalic version. Our technique involves filling the uterine cavity with 700 or 900 mL of 37C saline under continuous echographic monitoring. External cephalic version is done the next morning. We have used this procedure in six women, all of whom had previous unsuccessful attempts at external cephalic version. After amnioinfusion, all six patients were converted to cephalic presentation and delivered normally, without obstetric or neonatal complications.

Mapping quantum yield for (Fe-Zn-Sn-Ti)Ox photoabsorbers using a high throughput photoelectrochemical screening system.

PubMed

Xiang, Chengxiang; Haber, Joel; Marcin, Martin; Mitrovic, Slobodan; Jin, Jian; Gregoire, John M

2014-03-10

Combinatorial synthesis and screening of light absorbers are critical to material discoveries for photovoltaic and photoelectrochemical applications. One of the most effective ways to evaluate the energy-conversion properties of a semiconducting light absorber is to form an asymmetric junction and investigate the photogeneration, transport and recombination processes at the semiconductor interface. This standard photoelectrochemical measurement is readily made on a semiconductor sample with a back-side metallic contact (working electrode) and front-side solution contact. In a typical combinatorial material library, each sample shares a common back contact, requiring novel instrumentation to provide spatially resolved and thus sample-resolved measurements. We developed a multiplexing counter electrode with a thin layer assembly, in which a rectifying semiconductor/liquid junction was formed and the short-circuit photocurrent was measured under chopped illumination for each sample in a material library. The multiplexing counter electrode assembly demonstrated a photocurrent sensitivity of sub-10 μA cm(-2) with an external quantum yield sensitivity of 0.5% for each semiconductor sample under a monochromatic ultraviolet illumination source. The combination of cell architecture and multiplexing allows high-throughput modes of operation, including both fast-serial and parallel measurements. To demonstrate the performance of the instrument, the external quantum yields of 1819 different compositions from a pseudoquaternary metal oxide library, (Fe-Zn-Sn-Ti)Ox, at 385 nm were collected in scanning serial mode with a throughput of as fast as 1 s per sample. Preliminary screening results identified a promising ternary composition region centered at Fe0.894Sn0.103Ti0.0034Ox, with an external quantum yield of 6.7% at 385 nm.

Complete excavation and mapping of a Texas leafcutting ant nest

Treesearch

John C. Moser

2006-01-01

A medium-sized nest of the Texas leafcutting ant, Atta texana (Buckley), in northern Louisiana was excavated completely, and a three-dimensional model of its external and subterranean features was constructed. In total, 97 fungus gardens, 27 dormancy cavities, and 45 detritus cavities were located. At the lower center of the funnel-shaped nest was a...

Free electron laser using Rf coupled accelerating and decelerating structures

DOEpatents

Brau, Charles A.; Swenson, Donald A.; Boyd, Jr., Thomas J.

1984-01-01

A free electron laser and free electron laser amplifier using beam transport devices for guiding an electron beam to a wiggler of a free electron laser and returning the electron beam to decelerating cavities disposed adjacent to the accelerating cavities of the free electron laser. Rf energy is generated from the energy depleted electron beam after it emerges from the wiggler by means of the decelerating cavities which are closely coupled to the accelerating cavities, or by means of a second bore within a single set of cavities. Rf energy generated from the decelerated electron beam is used to supplement energy provided by an external source, such as a klystron, to thereby enhance overall efficiency of the system.

Micro ring cavity resonator incorporating total internal reflection mirrors

NASA Astrophysics Data System (ADS)

Kim, Doo Gun; Choi, Woon Kyung; Choi, Young Wan; Yi, Jong Chang; Chung, Youngchul; Dagli, Nadir

2007-02-01

We investigate the properties of a multimode-interference (MMI) coupled micro ring cavity resonator with total-internal-reflection (TIR) mirrors and a semiconductor optical amplifier (SOA). The TIR mirrors were fabricated by the self-aligned process with a loss of 0.7 dB per mirror. The length and width of an MMI are 142 μm and 10 μm, respectively. The resulting free spectral range (FSR) of the resonator was approximately 1.698 nm near 1571 nm and the extinction ratio was about 17 dB. These devices might be useful as optical switching and add-drop filters in a photonic integrated circuit or as small and fast resonator devices.

Thermo-optically tunable thin film devices

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.

2003-10-01

We report advances in tunable thin film technology and demonstration of multi-cavity tunable filters. Thin film interference coatings are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable components based on the properties of semiconductor thin films with large thermo-optic coefficients. The technology is based on amorphous silicon deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable thin films can be constructed in sophisticated multi-cavity, multi-layer optical designs.

Strong coupling of a single electron in silicon to a microwave photon

NASA Astrophysics Data System (ADS)

Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

2017-01-01

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

Passively mode-locked diode-pumped Nd:YVO4 oscillator operating at an ultralow repetition rate.

PubMed

Papadopoulos, D N; Forget, S; Delaigue, M; Druon, F; Balembois, F; Georges, P

2003-10-01

We demonstrate the operation of an ultralow-repetition-rate, high-peak-power, picosecond diode-pumped Nd:YVO4 passively mode-locked laser oscillator. Repetition rates lower than 1 MHz were achieved with the use of a new design for a multiple-pass cavity and a semiconductor saturable absorber. Long-term stable operation at 1.2 MHz with a pulse duration of 16.3 ps and an average output power of 470 mW, corresponding to 24-kW peak-power pulses, is reported. These are to our knowledge the lowest-repetition-rate high-peak-power pulses ever generated directly from apicosecond laser resonator without cavity dumping.

Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

NASA Astrophysics Data System (ADS)

Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

2015-04-01

A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

Cavity parameters identification for TESLA control system development

NASA Astrophysics Data System (ADS)

Czarski, Tomasz; Pozniak, Krysztof T.; Romaniuk, Ryszard S.; Simrock, Stefan

2005-08-01

Aim of the control system development for TESLA cavity is a more efficient stabilization of the pulsed, accelerating EM field inside resonator. Cavity parameters identification is an essential task for the comprehensive control algorithm. TESLA cavity simulator has been successfully implemented using high-speed FPGA technology. Electromechanical model of the cavity resonator includes Lorentz force detuning and beam loading. The parameters identification is based on the electrical model of the cavity. The model is represented by state space equation for envelope of the cavity voltage driven by current generator and beam loading. For a given model structure, the over-determined matrix equation is created covering long enough measurement range with the solution according to the least-squares method. A low-degree polynomial approximation is applied to estimate the time-varying cavity detuning during the pulse. The measurement channel distortion is considered, leading to the external cavity model seen by the controller. The comprehensive algorithm of the cavity parameters identification was implemented in the Matlab system with different modes of operation. Some experimental results were presented for different cavity operational conditions. The following considerations have lead to the synthesis of the efficient algorithm for the cavity control system predicted for the potential FPGA technology implementation.

Turbine vane with high temperature capable skins

DOEpatents

Morrison, Jay A [Oviedo, FL

2012-07-10

A turbine vane assembly includes an airfoil extending between an inner shroud and an outer shroud. The airfoil can include a substructure having an outer peripheral surface. At least a portion of the outer peripheral surface is covered by an external skin. The external skin can be made of a high temperature capable material, such as oxide dispersion strengthened alloys, intermetallic alloys, ceramic matrix composites or refractory alloys. The external skin can be formed, and the airfoil can be subsequently bi-cast around or onto the skin. The skin and the substructure can be attached by a plurality of attachment members extending between the skin and the substructure. The skin can be spaced from the outer peripheral surface of the substructure such that a cavity is formed therebetween. Coolant can be supplied to the cavity. Skins can also be applied to the gas path faces of the inner and outer shrouds.

Monolayer semiconductor nanocavity lasers with ultralow thresholds

DOE PAGES

Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; ...

2015-03-16

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter 1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC) 6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots 7, extreme difficulty in currentmore » injection8, and lack of compatibility with electronic circuits 7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe 2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers 7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.« less

Clinical dental application of Er:YAG laser for Class V cavity preparation.

PubMed

Matsumoto, K; Nakamura, Y; Mazeki, K; Kimura, Y

1996-06-01

Following the development of the ruby laser by Maiman in 1960, the Nd:YAG laser, the CO2 laser, the semiconductor laser, the He-Ne laser, excimer lasers, the argon laser, and finally the Er:YAG laser capable of cutting hard tissue easily were developed and have come to be applied clinically. In the present study, the Er:YAG laser emitting at a wavelength of 2.94 microns developed by Luxar was used for the clinical preparation of class V cavities. Parameters of 8 Hz and approx. 250 mJ/pulse maximum output were used for irradiation. Sixty teeth of 40 patients were used in this clinical study. The Er:YAG laser used in this study was found to be a system suitable for clinical application. No adverse reaction was observed in any of the cases. Class V cavity preparation was performed without inducing any pain in 48/60 cases (80%). All of the 12 cases that complained of mild or severe intraoperative pain had previously complained of cervical dentin hypersensibility during the preoperative examination. Cavity preparation was completed with this laser system in 58/60 cases (91.7%). No treatment-related clinical problems were observed during the follow-up period of approx. 30 days after cavity preparation and resin filling. Cavity preparation took between approx. 10 sec and 3 min and was related more or less to cavity size and depth. Overall clinical evaluation showed no safety problem with very good rating in 49 cases (81.7%).

Method for energy recovery of spent ERL beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marhauser, Frank; Hannon, Fay; Rimmer, Robert

A method for recovering energy from spent energy recovered linac (ERL) beams. The method includes adding a plurality of passive decelerating cavities at the beam dump of the ERL, adding one or more coupling waveguides between the passive decelerating cavities, setting an adequate external Q (Qext) to adjust to the beam loading situation, and extracting the RF energy through the coupling waveguides.

Continuous wavelength tunable laser source with optimum positioning of pivot axis for grating

DOEpatents

Pushkarsky, Michael; Amone, David F.

2010-06-08

A laser source (10) for generating a continuously wavelength tunable light (12) includes a gain media (16), an optical output coupler (36F), a cavity collimator (38A), a diffraction grating (30), a grating beam (54), and a beam attacher (56). The diffraction grating (30) is spaced apart from the cavity collimator (38A) and the grating (30) cooperates with the optical output coupler (36F) to define an external cavity (32). The grating (30) includes a grating face surface (42A) that is in a grating plane (42B). The beam attacher (56) retains the grating beam (54) and allows the grating beam (54) and the grating (30) to effectively pivot about a pivot axis (33) that is located approximately at an intersection of a pivot plane (50) and the grating plane (42B). As provided herein, the diffraction grating (30) can be pivoted about the unique pivot axis (33) to move the diffraction grating (30) relative to the gain media (16) to continuously tune the lasing frequency of the external cavity (32) and the wavelength of the output light (12) so that the output light (12) is mode hop free.

Simplified nonplanar wafer bonding for heterogeneous device integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

Nonlinear Frequency Conversion in III-V Semiconductor Photonic Crystals

DTIC Science & Technology

2012-03-01

nanocavities, by localizing light into sub-cubic optical wavelength volumes with long photon storage times, can greatly enhance the efficiency of...dissertation shows how optical nanocavities, by localizing light into sub-cubic optical wavelength volumes with long photon storage times, can greatly...8.2.3 Lithographic localization of molecules to cavity region . . . . . 86 8.2.4 Low temperature spectroscopy of DNQDI . . . . . . . . . . . 89 8.2.5

Scaling the spectral beam combining channel by multiple diode laser stacks in an external cavity

NASA Astrophysics Data System (ADS)

Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao; Lei, Fuchuan; Yu, Junhong; Tan, Hao

2017-04-01

Spectral beam combining of a broad area diode laser is a promising technique for direct diode laser applications. We present an experimental study of three mini-bar stacks in an external cavity on spectral beam combining in conjunction with spatial beam combining. At the pump current of 70 A, a CW output power of 579 W, spectral bandwidth of 18.8 nm and electro-optical conversion efficiency of 47% are achieved. The measured M 2 values of spectral beam combining are 18.4 and 14.7 for the fast and the slow axis, respectively. The brightness of the spectral beam combining output is 232 MW · cm-2 · sr-1.

Propeller modelling effects on interior noise in cylindrical cavities with application to active control

NASA Technical Reports Server (NTRS)

Silcox, R. J.; Lester, H. C.

1989-01-01

The coupling of a vibrating finite elastic cylinder and its interior cavity, closed with rigid end caps, is examined. Results are presented for several types of excitation including a point force, a single external acoustic monopole, and an array of external monopoles. Modal spectra are examined for a frequency range typical of the harmonic noise produced by advanced turbo-props. The effect of frequency and source distribution on modal content is presented. Significant interface modal filtering, which would have a beneficial impact on an active system for reducing interior noise, was found to occur for all cases. Some preliminary experimental data for a stiffened, composite cylinder are presented and discussed.

Single-mode, narrow-linewidth external cavity quantum cascade laser through optical feedback from a partial-reflector.

PubMed

Cendejas, Richard A; Phillips, Mark C; Myers, Tanya L; Taubman, Matthew S

2010-12-06

An external-cavity (EC) quantum cascade (QC) laser using optical feedback from a partial-reflector is reported. With this configuration, the otherwise multi-mode emission of a Fabry-Perot QC laser was made single-mode with optical output powers exceeding 40 mW. A mode-hop free tuning range of 2.46 cm(-1) was achieved by synchronously tuning the EC length and QC laser current. The linewidth of the partial-reflector EC-QC laser was measured for integration times from 100 μs to 4 seconds, and compared to a distributed feedback QC laser. Linewidths as small as 480 kHz were recorded for the EC-QC laser.

Demonstration of a rapidly-swept external cavity quantum cascade laser for rapid and sensitive quantification of chemical mixtures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brumfield, Brian E.; Taubman, Matthew S.; Phillips, Mark C.

2016-02-13

A rapidly-swept external cavity quantum cascade laser (ECQCL) system for fast open-path quantification of multiple chemicals and mixtures is presented. The ECQCL system is swept over its entire tuning range (>100 cm-1) at frequencies up to 200 Hz. At 200 Hz the wavelength tuning rate and spectral resolution are 2x104 cm-1/sec and < 0.2 cm-1, respectively. The capability of the current system to quantify changes in chemical concentrations on millesecond timescales is demonstrated at atmospheric pressure using an open-path multi-pass cell. The detection limits for chemicals ranged from ppb to ppm levels depending on the absorption cross-section.

Continuous multispectral imaging of surface phonon polaritons on silicon carbide with an external cavity quantum cascade laser

NASA Astrophysics Data System (ADS)

Dougakiuchi, Tatsuo; Kawada, Yoichi; Takebe, Gen

2018-03-01

We demonstrate the continuous multispectral imaging of surface phonon polaritons (SPhPs) on silicon carbide excited by an external cavity quantum cascade laser using scattering-type scanning near-field optical microscopy. The launched SPhPs were well characterized via the confirmation that the theoretical dispersion relation and measured in-plane wave vectors are in excellent agreement in the entire measurement range. The proposed scheme, which can excite and observe SPhPs with an arbitrary wavelength that effectively covers the spectral gap of CO2 lasers, is expected to be applicable for studies of near-field optics and for various applications based on SPhPs.

Investigation of the influence of the proximity effect and randomness on a photolithographically fabricated photonic crystal nanobeam cavity

NASA Astrophysics Data System (ADS)

Tetsumoto, Tomohiro; Kumazaki, Hajime; Ishida, Rammaru; Tanabe, Takasumi

2018-01-01

Recent progress on the fabrication techniques used in silicon photonics foundries has enabled us to fabricate photonic crystal (PhC) nanocavities using a complementary metal-oxide-semiconductor (CMOS) compatible process. A high Q two-dimensional PhC nanocavity and a one-dimensional nanobeam PhC cavity with a Q exceeding 100 thousand have been fabricated using ArF excimer laser immersion lithography. These are important steps toward the fusion of silicon photonics devices and PhC devices. Although the fabrication must be reproducible for industrial applications, the properties of PhC nanocavities are sensitively affected by the proximity effect and randomness. In this study, we quantitatively investigated the influence of the proximity effect and randomness on a silicon nanobeam PhC cavity. First, we discussed the optical properties of cavities defined with one- and two-step exposure methods, which revealed the necessity of a multi-stage exposure process for our structure. Then, we investigated the impact of block structures placed next to the cavities. The presence of the blocks modified the resonant wavelength of the cavities by about 10 nm. The highest Q we obtained was over 100 thousand. We also discussed the influence of photomask misalignment, which is also a possible cause of disorders in the photolithographic fabrication process. This study will provide useful information for fabricating integrated photonic circuits with PhC nanocavities using a photolithographic process.

Nonradiating and radiating modes excited by quantum emitters in open epsilon-near-zero cavities

PubMed Central

Liberal, Iñigo; Engheta, Nader

2016-01-01

Controlling the emission and interaction properties of quantum emitters (QEs) embedded within an optical cavity is a key technique in engineering light-matter interactions at the nanoscale, as well as in the development of quantum information processing. State-of-the-art optical cavities are based on high quality factor photonic crystals and dielectric resonators. However, wealthier responses might be attainable with cavities carved in more exotic materials. We theoretically investigate the emission and interaction properties of QEs embedded in open epsilon-near-zero (ENZ) cavities. Using analytical methods and numerical simulations, we demonstrate that open ENZ cavities present the unique property of supporting nonradiating modes independently of the geometry of the external boundary of the cavity (shape, size, topology, etc.). Moreover, the possibility of switching between radiating and nonradiating modes enables a dynamic control of the emission by, and the interaction between, QEs. These phenomena provide unprecedented degrees of freedom in controlling and trapping fields within optical cavities, as well as in the design of cavity opto- and acoustomechanical systems. PMID:27819047

Nonradiating and radiating modes excited by quantum emitters in open epsilon-near-zero cavities.

PubMed

Liberal, Iñigo; Engheta, Nader

2016-10-01

Controlling the emission and interaction properties of quantum emitters (QEs) embedded within an optical cavity is a key technique in engineering light-matter interactions at the nanoscale, as well as in the development of quantum information processing. State-of-the-art optical cavities are based on high quality factor photonic crystals and dielectric resonators. However, wealthier responses might be attainable with cavities carved in more exotic materials. We theoretically investigate the emission and interaction properties of QEs embedded in open epsilon-near-zero (ENZ) cavities. Using analytical methods and numerical simulations, we demonstrate that open ENZ cavities present the unique property of supporting nonradiating modes independently of the geometry of the external boundary of the cavity (shape, size, topology, etc.). Moreover, the possibility of switching between radiating and nonradiating modes enables a dynamic control of the emission by, and the interaction between, QEs. These phenomena provide unprecedented degrees of freedom in controlling and trapping fields within optical cavities, as well as in the design of cavity opto- and acoustomechanical systems.

The Effect of the Electron Tunneling on the Photoelectric Hot Electrons Generation in Metallic-Semiconductor Nanostructures

NASA Astrophysics Data System (ADS)

Elsharif, Asma M.

2018-01-01

Semiconductor photonic crystals (MSPhC) were used to convert solar energy into hot electrons. An experimental model was designed by using metallic semiconductor photonic crystals (MSPhC). The designed MSPhC is based on TiO2/Au schottky contact. The model has similar nanocavity structure for broad gold absorption, but the materials on top of the cavity were changed to a metal and a semiconductor in order to collect the hot electrons. Detailed design steps and characterization have shown a broadband sub-bandgap photoresponse at a wavelength of 590 nm. This is due to the surface plasmon absorption by the wafer-scale Au/TiO2 metallic-semiconductor photonic crystal. Analytical calculation of the hot electron transport from the Au thin layer to the TiO2 conduction band is discussed. This theoretical study is based on the quantum tunneling effect. The photo generation of the hot electrons was undertaken at different wavelengths in Au absorber followed by tunneling through a schottky barrier into a TiO2 collector. The presence of a tunnel current from the absorber to the collector under illumination, offers a method to extract carriers from a hot-electron distribution at few bias voltages is presented in this study. The effects of doping different concentrations of the semiconductor on the evolution of the current characteristics were also investigated and discussed. The electrical characteristics were found to be sensitive to any change in the thickness of the barrier.

Properties of a vector soliton laser passively mode-locked by a fiber-based semiconductor saturable absorber operating in transmission

NASA Astrophysics Data System (ADS)

Ouyang, Chunmei; Wang, Honghai; Shum, Ping; Fu, Songnian; Wong, Jia Haur; Wu, Kan; Lim, Desmond Rodney Chin Siong; Wong, Vincent Kwok Huei; Lee, Kenneth Eng Kian

2011-01-01

We experimentally demonstrate a passively mode-locked fiber laser employing a fiber-based semiconductor saturable absorber (SSA) operating in transmission. Polarization rotation locked vector solitons are observed in the laser. Due to the intrinsic dynamic feature of the laser, period-doubling of these vector solitons has also been observed. Furthermore, extra spectral sidebands are formed on the optical spectrum, caused by the energy exchange between the two orthogonal polarization components of the vector solitons. By careful reduction of the pump power together with fine adjustment to the cavity birefringence, period-one state can further be obtained. Additionally, the phase noise properties of the vector soliton fiber laser have also been characterized experimentally and analytically.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slipchenko, S. O., E-mail: serghpl@mail.ioffe.ru; Podoskin, A. A.; Pikhtin, N. A.

Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied atmore » a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.« less

Dielectric Covered Planar Antennas

NASA Technical Reports Server (NTRS)

Llombart Juan, Nuria (Inventor); Lee, Choonsup (Inventor); Chattopadhyay, Goutam (Inventor); Gill, John J. (Inventor); Skalare, Anders J. (Inventor); Siegel, Peter H. (Inventor)

2014-01-01

An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.

Modulation limit of semiconductor lasers by some parametric modulation schemes

NASA Astrophysics Data System (ADS)

Iga, K.

1985-07-01

Using the simple rate equations and small signal analysis, the modulation speed limit of semiconductor lasers with modulation schemes such as gain switching, modulation of nonradiative recombination lifetime of minority carriers, and cavity Q modulation, is calculated and compared with the injection modulation scheme of Ikegami and Suematsu (1968). It is found that the maximum modulation frequency for the gain and Q modulation can exceed the resonance-like frequency by a factor equal to the coefficient of the time derivative of the modulation parameter, though the nonradiative lifetime modulation is not shown to be different from the injection modulation. A solution for the carrier lifetime modulation of LED is obtained, and the possibility of wideband modulation in this scheme is demonstrated.

Interference effect in the resonant emission of a semiconductor microcavity

NASA Astrophysics Data System (ADS)

Cassabois, G.; Bogani, F.; Triques, A. L.; Delalande, C.; Roussignol, Ph.

2001-07-01

We present a phenomenological description of the coherent emission from a semiconductor microcavity in the strong-coupling regime. We consider two main contributions which are calculated in the framework of the semiclassical approach of the linear dispersion theory: reflectivity corresponds to the response of a uniform microcavity while resonant Rayleigh scattering (RRS) arises from disorder. Our simulations are compared to experimental results obtained at normal incidence in a backscattering geometry by means of cw spectroscopy and interferometric correlation with subpicosecond resolution. In this geometry, a fair agreement is reached assuming interferences between the two aforementioned contributions. This interference effect gives evidence of the drastic modification of the RRS emission pattern of the embedded quantum well induced by the Fabry-Pérot cavity.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

PubMed

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

JSEP fellowship

NASA Astrophysics Data System (ADS)

Goodman, Alvin M.; Powers, Edward J.

1993-06-01

In this dissertation, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSEL's) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.

Cavity-backed, micro-strip dipole antenna array

NASA Technical Reports Server (NTRS)

Ellis, H., Jr. (Inventor)

1981-01-01

A flush-mounted antenna assembly includes a generally rectangular, conductive, box structure open along one face to form a cavity. Within the cavity a pair of mutually orthogonal dielectric plane surfaces in an "egg crate" arrangement are mounted normal to the plane of the open face, each diagonally within the cavity. Each dielectric plane supports a pair of printed circuit dipoles typically each fed from the opposite side of the dielectric plane by a printed "cone-shaped" feed line trace which also serve as an impedance matching device and functions as a balun connected from an unbalanced strip line external feed. The open face of the conductive cavity can be flush mounted with a randome thereover, the assembly thereby being flush with the skin of a aircraft or space vehicle.

Cavity-backed, micro-strip dipole antenna array

NASA Astrophysics Data System (ADS)

Ellis, H., Jr.

1981-09-01

A flush-mounted antenna assembly includes a generally rectangular, conductive, box structure open along one face to form a cavity. Within the cavity a pair of mutually orthogonal dielectric plane surfaces in an "egg crate" arrangement are mounted normal to the plane of the open face, each diagonally within the cavity. Each dielectric plane supports a pair of printed circuit dipoles typically each fed from the opposite side of the dielectric plane by a printed "cone-shaped" feed line trace which also serve as an impedance matching device and functions as a balun connected from an unbalanced strip line external feed. The open face of the conductive cavity can be flush mounted with a randome thereover, the assembly thereby being flush with the skin of a aircraft or space vehicle.

Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

NASA Astrophysics Data System (ADS)

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

2018-03-01

We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

Continuous wave external-cavity quantum cascade laser-based high-resolution cavity ring-down spectrometer for ultrasensitive trace gas detection.

PubMed

De, Anulekha; Banik, Gourab Dutta; Maity, Abhijit; Pal, Mithun; Pradhan, Manik

2016-05-01

A high-resolution cavity ring-down spectroscopic (CRDS) system based on a continuous wave (cw) mode-hop-free (MHF) external-cavity quantum cascade laser (EC-QCL) operating at λ∼5.2  μm has been developed for ultrasensitive detection of nitric oxide (NO). We report the performance of the high-resolution EC-QCL based cw-CRDS instrument by measuring the rotationally resolved Λ-doublet e and f components of the P(7.5) line in the fundamental band of NO at 1850.169  cm^-1 and 1850.179  cm^-1. A noise-equivalent absorption coefficient of 1.01×10^-9  cm^-1  Hz^-1/2 was achieved based on an empty cavity ring-down time of τ₀=5.6  μs and standard deviation of 0.11% with averaging of six ring-down time determinations. The CRDS sensor demonstrates the advantages of measuring parts per billion NO concentrations in N₂, as well as in human breath samples with ultrahigh sensitivity and specificity. The CRDS system could also be generalized to measure simultaneously many other trace molecular species within the broad tuning range of cw EC-QCL, as well as for studying the rotationally resolved hyperfine structures.

Cavity length dependence of mode beating in passively Q-switched Nd-solid state lasers

NASA Astrophysics Data System (ADS)

Zameroski, Nathan D.; Wanke, Michael; Bossert, David

2013-03-01

The temporal intensity profile of pulse(s) from passively Q-switched and passively Q-switched mode locked (QSML) solid-state lasers is known to be dependent on cavity length. In this work, the pulse width, modulation depth, and beat frequencies of a Nd:Cr:GSGG laser using a Cr+4:YAG passive Q-switch are investigated as function cavity length. Measured temporal widths are linearly correlated with cavity length but generally 3-5 ns larger than theoretical predictions. Some cavity lengths exhibit pulse profiles with no modulation while other lengths exhibit complete amplitude modulation. The observed beat frequencies at certain cavity lengths cannot be accounted for with passively QSML models in which the pulse train repetition rate is τRT-1, τRT= round-trip time. They can be explained, however, by including coupled cavity mode-locking effects. A theoretical model developed for a two section coupled cavity semiconductor laser is adapted to a solid-state laser to interpret measured beat frequencies. We also numerically evaluate the temporal criterion required to achieve temporally smooth Q-switched pulses, versus cavity length and pump rate. We show that in flash lamp pumped systems, the difference in buildup time between longitudinal modes is largely dependent on the pump rate. In applications where short pulse delay is important, the pumping rate may limit the ability to achieve temporally smooth pulses in passively Q-switched lasers. Simulations support trends in experimental data. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Single photon sources with single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Beam Test of a Dielectric Loaded High Pressure RF Cavity for Use in Muon Cooling Channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freemire, Ben; Bowring, Daniel; Kochemirovskiy, Alexey

2016-06-01

Bright muon sources require six dimensional cooling to achieve acceptable luminosities. Ionization cooling is the only known method able to do so within the muon lifetime. One proposed cooling channel, the Helical Cooling Channel, utilizes gas filled radio frequency cavities to both mitigate RF breakdown in the presence of strong, external magnetic fields, and provide the cooling medium. Engineering constraints on the diameter of the magnets within which these cavities operate dictate the radius of the cavities be decreased at their nominal operating frequency. To accomplish this, one may load the cavities with a larger dielectric material. A 99.5% aluminamore » ring was inserted in a high pressure RF test cell and subjected to an intense proton beam at the MuCool Test Area at Fermilab. The results of the performance of this dielectric loaded high pressure RF cavity will be presented.« less

Development of a cw-laser-based cavity-ringdown sensor aboard a spacecraft for trace air constituents

NASA Technical Reports Server (NTRS)

Awtry, A. R.; Miller, J. H.

2002-01-01

The progress in the development of a sensor for the detection of trace air constituents to monitor spacecraft air quality is reported. A continuous-wave (cw), external-cavity tunable diode laser centered at 1.55 micrometers is used to pump an optical cavity absorption cell in cw-cavity ringdown spectroscopy (cw-CRDS). Preliminary results are presented that demonstrate the sensitivity, selectivity and reproducibility of this method. Detection limits of 2.0 ppm for CO, 2.5 ppm for CO2, 1.8 ppm for H2O, 19.4 ppb for NH3, 7.9 ppb for HCN and 4.0 ppb for C2H2 are calculated.

Evanescent-wave comb spectroscopy of liquids with strongly dispersive optical fiber cavities

NASA Astrophysics Data System (ADS)

Avino, S.; Giorgini, A.; Salza, M.; Fabian, M.; Gagliardi, G.; De Natale, P.

2013-05-01

We demonstrate evanescent-wave fiber cavity-enhanced spectroscopy in the liquid phase using a near-infrared frequency comb. Exploiting strong fiber-dispersion effects, we show that liquid absorption spectra can be recorded without any external dispersive element. The fiber cavity is used both as sensor and spectrometer. The resonance modes are frequency locked to the comb teeth while the cavity photon lifetime is measured over 155 nm, from 1515 nm to 1670 nm, where absorption bands of liquid polyamines are detected as a proof of concept. Our fiber spectrometer lends itself to in situ, real-time chemical analysis in environmental monitoring, biomedical assays, and micro-opto-fluidic systems.

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

NASA Astrophysics Data System (ADS)

Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

2017-10-01

Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

Asymmetric dual-loop feedback to suppress spurious tones and reduce timing jitter in self-mode-locked quantum-dash lasers emitting at 155 μm

NASA Astrophysics Data System (ADS)

Asghar, Haroon; McInerney, John G.

2017-09-01

We demonstrate an asymmetric dual-loop feedback scheme to suppress external cavity side-modes induced in self-mode-locked quantum-dash lasers with conventional single and dual-loop feedback. In this letter, we achieved optimal suppression of spurious tones by optimizing the length of second delay time. We observed that asymmetric dual-loop feedback, with large (~8x) disparity in cavity lengths, eliminates all external-cavity side-modes and produces flat RF spectra close to the main peak with low timing jitter compared to single-loop feedback. Significant reduction in RF linewidth and reduced timing jitter was also observed as a function of increased second feedback delay time. The experimental results based on this feedback configuration validate predictions of recently published numerical simulations. This interesting asymmetric dual-loop feedback scheme provides simplest, efficient and cost effective stabilization of side-band free optoelectronic oscillators based on mode-locked lasers.

Open-cavity fiber laser with distributed feedback based on externally or self-induced dynamic gratings.

PubMed

Lobach, Ivan A; Drobyshev, Roman V; Fotiadi, Andrei A; Podivilov, Evgeniy V; Kablukov, Sergey I; Babin, Sergey A

2017-10-15

Dynamic population inversion gratings induced in an active medium by counter-propagating optical fields may have a reverse effect on writing laser radiation via feedback they provide. In this Letter we report, to the best of our knowledge, on the first demonstration of an open-cavity fiber laser in which the distributed feedback is provided by a dynamic grating "written" in a Yb-doped active fiber, either by an external source or self-induced via a weak (∼0.1%) reflection from an angle-cleaved fiber end. It has been shown that meters-long dynamic grating is formed with a narrow bandwidth (<50  MHz) and a relatively high-reflection coefficient (>7%) securing single-frequency operation, but the subsequent hole-burning effects accompanied by new grating formation lead to the switching from one longitudinal mode to another. providing a regular pulse-mode dynamics. As a result, periodically generated pulse trains cover a spectrum range of several terahertz delivering millions of cavity modes in sequent pulses.

Brownian escape and force-driven transport through entropic barriers: Particle size effect.

PubMed

Cheng, Kuang-Ling; Sheng, Yu-Jane; Tsao, Heng-Kwong

2008-11-14

Brownian escape from a spherical cavity through small holes and force-driven transport through periodic spherical cavities for finite-size particles have been investigated by Brownian dynamic simulations and scaling analysis. The mean first passage time and force-driven mobility are obtained as a function of particle diameter a, hole radius R(H), cavity radius R(C), and external field strength. In the absence of external field, the escape rate is proportional to the exit effect, (R(H)R(C))(1-a2R(H))(32). In weak fields, Brownian diffusion is still dominant and the migration is controlled by the exit effect. Therefore, smaller particles migrate faster than larger ones. In this limit the relation between Brownian escape and force-driven transport can be established by the generalized Einstein-Smoluchowski relation. As the field strength is strong enough, the mobility becomes field dependent and grows with increasing field strength. As a result, the size selectivity diminishes.

Thermal conditions within tree cavities in ponderosa pine (Pinus ponderosa) forests: potential implications for cavity users.

PubMed

Vierling, Kerri T; Lorenz, Teresa J; Cunningham, Patrick; Potterf, Kelsi

2018-04-01

Tree cavities provide critical roosting and breeding sites for multiple species, and thermal environments in these cavities are important to understand. Our objectives were to (1) describe thermal characteristics in cavities between June 3 and August 9, 2014, and (2) investigate the environmental factors that influence cavity temperatures. We placed iButtons in 84 different cavities in ponderosa pine (Pinus ponderosa) forests in central Washington, and took hourly measurements for at least 8 days in each cavity. Temperatures above 40 °C are generally lethal to developing avian embryos, and ~ 18% of the cavities had internal temperatures of ≥ 40 °C for at least 1 h of each day. We modeled daily maximum cavity temperature, the amplitude of daily cavity temperatures, and the difference between the mean internal cavity and mean ambient temperatures as a function of several environmental variables. These variables included canopy cover, tree diameter at cavity height, cavity volume, entrance area, the hardness of the cavity body, the hardness of the cavity sill (which is the wood below the cavity entrance which forms the barrier between the cavity and the external environment), and sill width. Ambient temperature had the largest effect size for maximum cavity temperature and amplitude. Larger trees with harder sills may provide more thermally stable cavity environments, and decayed sills were positively associated with maximum cavity temperatures. Summer temperatures are projected to increase in this region, and additional research is needed to determine how the thermal environments of cavities will influence species occupancy, breeding, and survival.

Thermal conditions within tree cavities in ponderosa pine (Pinus ponderosa) forests: potential implications for cavity users

NASA Astrophysics Data System (ADS)

Vierling, Kerri T.; Lorenz, Teresa J.; Cunningham, Patrick; Potterf, Kelsi

2017-11-01

Tree cavities provide critical roosting and breeding sites for multiple species, and thermal environments in these cavities are important to understand. Our objectives were to (1) describe thermal characteristics in cavities between June 3 and August 9, 2014, and (2) investigate the environmental factors that influence cavity temperatures. We placed iButtons in 84 different cavities in ponderosa pine (Pinus ponderosa) forests in central Washington, and took hourly measurements for at least 8 days in each cavity. Temperatures above 40 °C are generally lethal to developing avian embryos, and 18% of the cavities had internal temperatures of ≥ 40 °C for at least 1 h of each day. We modeled daily maximum cavity temperature, the amplitude of daily cavity temperatures, and the difference between the mean internal cavity and mean ambient temperatures as a function of several environmental variables. These variables included canopy cover, tree diameter at cavity height, cavity volume, entrance area, the hardness of the cavity body, the hardness of the cavity sill (which is the wood below the cavity entrance which forms the barrier between the cavity and the external environment), and sill width. Ambient temperature had the largest effect size for maximum cavity temperature and amplitude. Larger trees with harder sills may provide more thermally stable cavity environments, and decayed sills were positively associated with maximum cavity temperatures. Summer temperatures are projected to increase in this region, and additional research is needed to determine how the thermal environments of cavities will influence species occupancy, breeding, and survival.

Parametric resonance in tunable superconducting cavities

NASA Astrophysics Data System (ADS)

Wustmann, Waltraut; Shumeiko, Vitaly

2013-05-01

We develop a theory of parametric resonance in tunable superconducting cavities. The nonlinearity introduced by the superconducting quantum interference device (SQUID) attached to the cavity and damping due to connection of the cavity to a transmission line are taken into consideration. We study in detail the nonlinear classical dynamics of the cavity field below and above the parametric threshold for the degenerate parametric resonance, featuring regimes of multistability and parametric radiation. We investigate the phase-sensitive amplification of external signals on resonance, as well as amplification of detuned signals, and relate the amplifier performance to that of linear parametric amplifiers. We also discuss applications of the device for dispersive qubit readout. Beyond the classical response of the cavity, we investigate small quantum fluctuations around the amplified classical signals. We evaluate the noise power spectrum both for the internal field in the cavity and the output field. Other quantum-statistical properties of the noise are addressed such as squeezing spectra, second-order coherence, and two-mode entanglement.

Multijunction high-voltage solar cell

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Goradia, C.; Chai, A. T.

1981-01-01

Multijunction cell allows for fabrication of high-voltage solar cell on single semiconductor wafer. Photovoltaic energy source using cell is combined on wafer with circuit it is to power. Cell consists of many voltage-generating regions internally or externally interconnected to give desired voltage and current combination. For computer applications, module is built on silicon wafer with energy for internal information processing and readouts derived from external light source.

Absolute instability of polaron mode in semiconductor magnetoplasma

NASA Astrophysics Data System (ADS)

Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

2018-01-01

Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

NASA Astrophysics Data System (ADS)

Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

2017-10-01

We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

Development of long wavelength semiconductor diode lasers near 28 microns for use in infrared heterodyne spectrometers

NASA Technical Reports Server (NTRS)

Linden, K. J.

1984-01-01

The development of tunable diode lasers operating in the 28 micrometers spectral region for use in infrared heterodyne spectrometers is reported. A process capable of yielding lasers emitting 500 micron W of multimode power, 112 micron W in a true single mode and true single mode operation at laser currents of up to 35% above threshold was developed. Results were obtained from narrow mesastripe (20 micrometer wide) short cavity (120 micrometer length) laser configurations. Six stripe geometry lasers, with a variety of cavity widths and lengths were delivered. The techniques to fabricate such devices was obtained and the long term reliability of such lasers by reproducible electrical and optical output characteristics fabrication from lasers are demonstrated.

Strong coupling of a single electron in silicon to a microwave photon.

PubMed

Mi, X; Cady, J V; Zajac, D M; Deelman, P W; Petta, J R

2017-01-13

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots. Copyright © 2017, American Association for the Advancement of Science.

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

NASA Astrophysics Data System (ADS)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Rolland

Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Part of the problem is that RF breakdown in an evacuated cavity involves a complex mixture of effects, which include the geometry, metallurgy, and surface preparation of the accelerating structures and the make-up and pressure of the residual gas in which plasmas form. Studies showed that high gradients canmore » be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas, as needed for muon cooling channels, without the need for long conditioning times, even in the presence of strong external magnetic fields. This positive result was expected because the dense gas can practically eliminate dark currents and multipacting. In this project we used this high pressure technique to suppress effects of residual vacuum and geometry that are found in evacuated cavities in order to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. One of the interesting and useful outcomes of this project was the unanticipated collaborations with LANL and Fermilab that led to new insights as to the operation of evacuated normal-conducting RF cavities in high external magnetic fields. Other accomplishments included: (1) RF breakdown experiments to test the effects of SF6 dopant in H2 and He gases with Sn, Al, and Cu electrodes were carried out in an 805 MHz cavity and compared to calculations and computer simulations. The heavy corrosion caused by the SF6 components led to the suggestion that a small admixture of oxygen, instead of SF6, to the hydrogen would allow the same advantages without the corrosion in a practical muon beam line. (2) A 1.3 GHz RF test cell capable of operating both at high pressure and in vacuum with replaceable electrodes was designed, built, and power tested in preparation for testing the frequency and geometry effects of RF breakdown at Argonne National Lab. At the time of this report this cavity is still waiting for the 1.3 GHz klystron to be available at the Wakefield Test Facility. (3) Under a contract with Los Alamos National Lab, an 805 MHz RF test cavity, known as the All-Seasons Cavity (ASC), was designed and built by Muons, Inc. to operate either at high pressure or under vacuum. The LANL project to use the (ASC) was cancelled and the testing of the cavity has been continued under the grant reported on here using the Fermilab Mucool Test Area (MTA). The ASC is a true pillbox cavity that has performed under vacuum in high external magnetic field better than any other and has demonstrated that the high required accelerating gradients for many muon cooling beam line designs are possible. (4) Under ongoing support from the Muon Acceleration Program, microscopic surface analysis and computer simulations have been used to develop models of RF breakdown that apply to both pressurized and vacuum cavities. The understanding of RF breakdown will lead to better designs of RF cavities for many applications. An increase in the operating accelerating gradient, improved reliability and shorter conditioning times can generate very significant cost savings in many accelerator projects.« less

Curvature effects on the electronic and transport properties of semiconductor films

NASA Astrophysics Data System (ADS)

Batista, F. F.; Chaves, Andrey; da Costa, D. R.; Farias, G. A.

2018-05-01

Within the effective mass approximation, we study the curvature effects on the electronic and transport properties of semiconductor films. We investigate how the geometry-induced potential resulting exclusively from periodic ripples in the film induces electronic confinement and a superlattice band structure. For fixed curvature parameters, such a confinement can be easily tuned by an external electric field, hence features of the superlattice band structure such as its energy gaps and band curvature can be controlled by an external parameter. We also show that, for some values of curvature and electric field, it is possible to obtain massless Dirac bands for a smooth curved structure. Moreover, we use a wave packet propagation method to demonstrate that the ripples are responsible for a significant inter-sub-band transition, specially for moderate values of the ripple height.

Cavity-photon contribution to the effective interaction of electrons in parallel quantum dots

NASA Astrophysics Data System (ADS)

Gudmundsson, Vidar; Sitek, Anna; Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei

2016-05-01

A single cavity photon mode is expected to modify the Coulomb interaction of an electron system in the cavity. Here we investigate this phenomena in a parallel double quantum dot system. We explore properties of the closed system and the system after it has been opened up for electron transport. We show how results for both cases support the idea that the effective electron-electron interaction becomes more repulsive in the presence of a cavity photon field. This can be understood in terms of the cavity photons dressing the polarization terms in the effective mutual electron interaction leading to nontrivial delocalization or polarization of the charge in the double parallel dot potential. In addition, we find that the effective repulsion of the electrons can be reduced by quadrupolar collective oscillations excited by an external classical dipole electric field.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Optimized Spiral Metal-Gallium-Nitride Nanowire Cavity for Ultra-High Circular Dichroism Ultraviolet Lasing at Room Temperature.

PubMed

Liao, Wei-Chun; Liao, Shu-Wei; Chen, Kuo-Ju; Hsiao, Yu-Hao; Chang, Shu-Wei; Kuo, Hao-Chung; Shih, Min-Hsiung

2016-05-25

Circularly polarized laser sources with small footprints and high efficiencies can possess advanced functionalities in optical communication and biophotonic integrated systems. However, the conventional lasers with additional circular-polarization converters are bulky and hardly compatible with nanophotonic circuits, and most active chiral plasmonic nanostructures nowadays exhibit broadband emission and low circular dichroism. In this work, with spirals of gallium nitride (GaN) nanowires (NWRs) covered by a metal layer, we demonstrated an ultrasmall semiconductor laser capable of emitting circularly-polarized photons. The left- and right-hand spiral metal nanowire cavities with varied periods were designed at ultraviolet wavelengths to achieve the high quality factor circular dichroism metastructures. The dissymmetry factors characterizing the degrees of circular polarizations of the left- and right-hand chiral lasers were 1.4 and -1.6 (±2 if perfectly circular polarized), respectively. The results show that the chiral cavities with only 5 spiral periods can achieve lasing signals with the high degrees of circular polarizations.

Channel add-drop filter based on dual photonic crystal cavities in push-pull mode.

PubMed

Poulton, Christopher V; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2015-09-15

We demonstrate an add-drop filter based on a dual photonic crystal nanobeam cavity system that emulates the operation of a traveling wave resonator, and, thus, provides separation of the through and drop port transmission from the input port. The device is on a 3×3  mm chip fabricated in an advanced microelectronics silicon-on-insulator complementary metal-oxide semiconductor (SOI CMOS) process (IBM 45 nm SOI) without any foundry process modifications. The filter shows 1 dB of insertion loss in the drop port with a 3 dB bandwidth of 64 GHz, and 16 dB extinction in the through port. To the best of our knowledge, this is the first implementation of a port-separating, add-drop filter based on standing wave cavities coupled to conventional waveguides, and demonstrates a performance that suggests potential for photonic crystal devices within optical immersion lithography-based advanced CMOS electronics-photonics integration.

Electrically driven quantum light emission in electromechanically tuneable photonic crystal cavities

NASA Astrophysics Data System (ADS)

Petruzzella, M.; Pagliano, F. M.; Zobenica, Ž.; Birindelli, S.; Cotrufo, M.; van Otten, F. W. M.; van der Heijden, R. W.; Fiore, A.

2017-12-01

A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling of the number of these quantum nodes on a fully integrated chip has been prevented by the use of optical pumping strategies that require a bulky off-chip laser along with the lack of methods to control the energies of nano-cavities and emitters. Here, we concurrently overcome these limitations by demonstrating electrical injection of single excitonic lines within a nano-electro-mechanically tuneable photonic crystal cavity. When an electrically driven dot line is brought into resonance with a photonic crystal mode, its emission rate is enhanced. Anti-bunching experiments reveal the quantum nature of these on-demand sources emitting in the telecom range. These results represent an important step forward in the realization of integrated quantum optics experiments featuring multiple electrically triggered Purcell-enhanced single-photon sources embedded in a reconfigurable semiconductor architecture.

Single-shot quantum nondemolition measurement of a quantum-dot electron spin using cavity exciton-polaritons

NASA Astrophysics Data System (ADS)

Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

2014-10-01

We propose a scheme to perform single-shot quantum nondemolition (QND) readout of the spin of an electron trapped in a semiconductor quantum dot (QD). Our proposal relies on the interaction of the QD electron spin with optically excited, quantum well (QW) microcavity exciton-polaritons. The spin-dependent Coulomb exchange interaction between the QD electron and cavity polaritons causes the phase and intensity response of left circularly polarized light to be different than that of right circularly polarized light, in such a way that the QD electron's spin can be inferred from the response to a linearly polarized probe reflected or transmitted from the cavity. We show that with careful device design it is possible to essentially eliminate spin-flip Raman transitions. Thus a QND measurement of the QD electron spin can be performed within a few tens of nanoseconds with fidelity ˜99.95%. This improves upon current optical QD spin readout techniques across multiple metrics, including speed and scalability.

High power, widely tunable, mode-hop free, continuous wave external cavity quantum cascade laser for multi-species trace gas detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Centeno, R.; Marchenko, D.; Mandon, J.

We present a high power, widely tunable, continuous wave external cavity quantum cascade laser designed for infrared vibrational spectroscopy of molecules exhibiting broadband and single line absorption features. The laser source exhibits single mode operation with a tunability up to 303 cm{sup −1} (∼24% of the center wavelength) at 8 μm, with a maximum optical output power of 200 mW. In combination with off-axis integrated output spectroscopy, trace-gas detection of broadband absorption gases such as acetone was performed and a noise equivalent absorption sensitivity of 3.7 × 10{sup −8 }cm{sup −1 }Hz{sup −1/2} was obtained.

Fixed-wavelength H2O absorption spectroscopy system enhanced by an on-board external-cavity diode laser

NASA Astrophysics Data System (ADS)

Brittelle, Mack S.; Simms, Jean M.; Sanders, Scott T.; Gord, James R.; Roy, Sukesh

2016-03-01

We describe a system designed to perform fixed-wavelength absorption spectroscopy of H2O vapor in practical combustion devices. The system includes seven wavelength-stabilized distributed feedback (WSDFB) lasers, each with a spectral accuracy of  ±1 MHz. An on-board external cavity diode laser (ECDL) that tunes 1320-1365 nm extends the capabilities of the system. Five system operation modes are described. In one mode, a sweep of the ECDL is used to monitor each WSDFB laser wavelength with an accuracy of  ±30 MHz. Demonstrations of fixed-wavelength thermometry at 10 kHz bandwidth in near-room-temperature gases are presented; one test reveals a temperature measurement error of ~0.43%.

Broadband external cavity quantum cascade laser based sensor for gasoline detection

NASA Astrophysics Data System (ADS)

Ding, Junya; He, Tianbo; Zhou, Sheng; Li, Jinsong

2018-02-01

A new type of tunable diode spectroscopy sensor based on an external cavity quantum cascade laser (ECQCL) and a quartz crystal tuning fork (QCTF) were used for quantitative analysis of volatile organic compounds. In this work, the sensor system had been tested on different gasoline sample analysis. For signal processing, the self-established interpolation algorithm and multiple linear regression algorithm model were used for quantitative analysis of major volatile organic compounds in gasoline samples. The results were very consistent with that of the standard spectra taken from the Pacific Northwest National Laboratory (PNNL) database. In future, The ECQCL sensor will be used for trace explosive, chemical warfare agent, and toxic industrial chemical detection and spectroscopic analysis, etc.

High-sensitivity detection of TNT

PubMed Central

Pushkarsky, Michael B.; Dunayevskiy, Ilya G.; Prasanna, Manu; Tsekoun, Alexei G.; Go, Rowel; Patel, C. Kumar N.

2006-01-01

We report high-sensitivity detection of 2,4,6-trinitrotoluene (TNT) by using laser photoacoustic spectroscopy where the laser radiation is obtained from a continuous-wave room temperature high-power quantum cascade laser in an external grating cavity geometry. The external grating cavity quantum cascade laser is continuously tunable over ≈400 nm around 7.3 μm and produces a maximum continuous-wave power of ≈200 mW. The IR spectroscopic signature of TNT is sufficiently different from that of nitroglycerine so that unambiguous detection of TNT without false positives from traces of nitroglycerine is possible. We also report the results of spectroscopy of acetylene in the 7.3-μm region to demonstrate continuous tunability of the IR source. PMID:17164325

Alignment-stabilized interference filter-tuned external-cavity quantum cascade laser.

PubMed

Kischkat, Jan; Semtsiv, Mykhaylo P; Elagin, Mikaela; Monastyrskyi, Grygorii; Flores, Yuri; Kurlov, Sergii; Peters, Sven; Masselink, W Ted

2014-12-01

A passively alignment-stabilized external cavity quantum cascade laser (EC-QCL) employing a "cat's eye"-type retroreflector and an ultra-narrowband transmissive interference filter for wavelength selection is demonstrated and experimentally investigated. Compared with conventional grating-tuned ECQCLs, the setup is nearly two orders of magnitude more stable against misalignment of the components, and spectral fluctuation is reduced by one order of magnitude, allowing for a simultaneously lightweight and fail-safe construction, suitable for applications outdoors and in space. It also allows for a substantially greater level of miniaturization and cost reduction. These advantages fit in well with the general properties of modern QCLs in the promise to deliver useful and affordable mid-infrared-light sources for a variety of spectroscopic and imaging applications.

Mid-infrared gas absorption sensor based on a broadband external cavity quantum cascade laser

NASA Astrophysics Data System (ADS)

Sun, Juan; Deng, Hao; Liu, Ningwu; Wang, Hongliang; Yu, Benli; Li, Jingsong

2016-12-01

We developed a laser absorption sensor based on a pulsed, broadband tunable external cavity quantum cascade laser (ECQCL) centered at 1285 cm-1. Unlike traditional infrared spectroscopy system, a quartz crystal tuning fork (QCTF) as a light detector was used for laser signal detection. Fast Fourier transform was applied to extract vibration intensity information of QCTF. The sensor system is successfully tested on nitrous oxide (N2O) spectroscopy measurements and compared with a standard infrared detector. The wide wavelength tunability of ECQCL will allow us to access the fundamental vibrational bands of many chemical agents, which are well-suited for trace explosive, chemical warfare agent, and toxic industrial chemical detection and spectroscopic analysis.

Detection of multiple chemicals based on external cavity quantum cascade laser spectroscopy

NASA Astrophysics Data System (ADS)

Sun, Juan; Ding, Junya; Liu, Ningwu; Yang, Guangxiang; Li, Jingsong

2018-02-01

A laser spectroscopy system based on a broadband tunable external cavity quantum cascade laser (ECQCL) and a mini quartz crystal tuning fork (QCTF) detector was developed for standoff detection of volatile organic compounds (VOCs). The self-established spectral analysis model based on multiple algorithms for quantitative and qualitative analysis of VOC components (i.e. ethanol and acetone) was detailedly investigated in both closed cell and open path configurations. A good agreement was obtained between the experimentally observed spectra and the standard reference spectra. For open path detection of VOCs, the sensor system was demonstrated at a distance of 30 m. The preliminary laboratory results show that standoff detection of VOCs at a distance of over 100 m is very promising.

Green high-power tunable external-cavity GaN diode laser at 515  nm.

PubMed

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-09-15

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode laser system.

A novel multi-dimensional absolute distance measurement system using a basic frequency modulated continuous wave radar and an external cavity laser with trilateration metrology

NASA Astrophysics Data System (ADS)

Xiong, Xingting; Qu, Xinghua; Zhang, Fumin

2018-01-01

We propose and describe a novel multi-dimensional absolute distance measurement system. This system incorporates a basic frequency modulated continuous wave (FMCW) radar and an second external cavity laser (ECL). Through the use of trilateration, the system in our paper can provide 3D resolution inherently range. However, the measured optical path length differences (OPD) is often variable in industrial environments and this will causes Doppler effect, which has greatly impact on the measurement result. With using the second ECL, the system can correct the Doppler effect to ensure the precision of absolute distance measurement. Result of the simulation will prove the influence of Doppler effect.

Mid-infrared gas absorption sensor based on a broadband external cavity quantum cascade laser.

PubMed

Sun, Juan; Deng, Hao; Liu, Ningwu; Wang, Hongliang; Yu, Benli; Li, Jingsong

2016-12-01

We developed a laser absorption sensor based on a pulsed, broadband tunable external cavity quantum cascade laser (ECQCL) centered at 1285 cm -1 . Unlike traditional infrared spectroscopy system, a quartz crystal tuning fork (QCTF) as a light detector was used for laser signal detection. Fast Fourier transform was applied to extract vibration intensity information of QCTF. The sensor system is successfully tested on nitrous oxide (N 2 O) spectroscopy measurements and compared with a standard infrared detector. The wide wavelength tunability of ECQCL will allow us to access the fundamental vibrational bands of many chemical agents, which are well-suited for trace explosive, chemical warfare agent, and toxic industrial chemical detection and spectroscopic analysis.

Evidence for thermal boundary resistance effects on superconducting radiofrequency cavity performances

NASA Astrophysics Data System (ADS)

Palmieri, Vincenzo; Rossi, Antonio Alessandro; Stark, Sergey Yu; Vaglio, Ruggero

2014-08-01

The majority of the literature on superconducting cavities for particle accelerators concentrates on the interaction of a radiofrequency (RF) electromagnetic field with a superconductor cooled in liquid helium, generally either at a fixed temperature of 4.2 K or 1.8 K, basing the analysis of experimental results on the assumption that the superconductor is at the same temperature as the infinite reservoir of liquid helium. Only a limited number of papers have extended their analysis to the more complex overall system composed of an RF field, a superconductor and liquid helium. Only a few papers have analyzed, for example, the problem of the Kapitza resistance, i.e. the thermal boundary resistance between the superconductor and the superfluid helium. Among them, the general conclusion is that the Kapitza resistance, one of the most controversial and less understood topics in physics, is generally negligible, or not relevant for the performance enhancement of cavities. In our work presented here, studying the performance of 6 GHz niobium (Nb) test cavities, we have discovered and studied a new effect consisting of an abrupt change in the surface resistance versus temperature at the superfluid helium lambda transition Tλ. This abrupt change (or ‘jump’) clearly appears when the RF measurement of a cavity is performed at constant power rather than at a constant field. We have correlated this jump to a change in the thermal exchange regime across the lambda transition, and, through a simple thermal model and further reasonable assumptions, we have calculated the thermal boundary resistance between niobium and liquid helium in the temperature range between 4.2 K and 1.8 K. We find that the absolute values of the thermal resistance both above and below the lambda point are fully compatible with the data reported in the literature for heat transfer to pool boiling helium I (HeI) above Tλ and for the Kapitza interface resistance (below Tλ) between a polished metal surface and superfluid HeII. Finally, based on the well-documented evidence that the surface status of metal to liquid helium influences the heat exchange towards the fluid, and specifically the Kapitza resistance below Tλ, we have tested an anodization process external to the cavity, comparing the performances of the cavity before and after external anodization. The tests were done without breaking the vacuum inside the cavity or modifying the inner superconducting layer in any way, and were repeated on different samples. The results show that when the cavity is externally anodized, both the Q-factor and the maximum accelerating field increase. Again, when the oxide layer is removed, the Q-factor shifts towards a lower level and the maximum accelerating field is also reduced.

Gain-assisted broadband ring cavity enhanced spectroscopy

NASA Astrophysics Data System (ADS)

Selim, Mahmoud A.; Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2017-02-01

Incoherent broadband cavity enhanced spectroscopy can significantly increase the effective path length of light-matter interaction to detect weak absorption lines over broad spectral range, for instance to detect gases in confined environments. Broadband cavity enhancement can be based on the decay time or the intensity drop technique. Decay time measurement is based on using tunable laser source that is expensive and suffers from long scan time. Intensity dependent measurement is usually reported based on broadband source using Fabry-Perot cavity, enabling short measurement time but suffers from the alignment tolerance of the cavity and the cavity insertion loss. In this work we overcome these challenges by using an alignment-free ring cavity made of an optical fiber loop and a directional coupler, while having a gain medium pumped below the lasing threshold to improve the finesse and reduce the insertion loss. Acetylene (C2H2) gas absorption is measured around 1535 nm wavelength using a semiconductor optical amplifier (SOA) gain medium. The system is analyzed for different ring resonator forward coupling coefficient and loses, including the 3-cm long gas cell insertion loss and fiber connector losses used in the experimental verification. The experimental results are obtained for a coupler ratio of 90/10 and a fiber length of 4 m. The broadband source is the amplified spontaneous emission of another SOA and the output is measured using a 70pm-resolution optical spectrum analyzer. The absorption depth and the effective interaction length are improved about an order of magnitude compared to the direct absorption of the gas cell. The presented technique provides an engineering method to improve the finesse and, consequently the effective length, while relaxing the technological constraints on the high reflectivity mirrors and free-space cavity alignment.

Cleaved-coupled nanowire lasers

PubMed Central

Gao, Hanwei; Fu, Anthony; Andrews, Sean C.; Yang, Peidong

2013-01-01

The miniaturization of optoelectronic devices is essential for the continued success of photonic technologies. Nanowires have been identified as potential building blocks that mimic conventional photonic components such as interconnects, waveguides, and optical cavities at the nanoscale. Semiconductor nanowires with high optical gain offer promising solutions for lasers with small footprints and low power consumption. Although much effort has been directed toward controlling their size, shape, and composition, most nanowire lasers currently suffer from emitting at multiple frequencies simultaneously, arising from the longitudinal modes native to simple Fabry–Pérot cavities. Cleaved-coupled cavities, two Fabry–Pérot cavities that are axially coupled through an air gap, are a promising architecture to produce single-frequency emission. The miniaturization of this concept, however, imposes a restriction on the dimensions of the intercavity gaps because severe optical losses are incurred when the cross-sectional dimensions of cavities become comparable to the lasing wavelength. Here we theoretically investigate and experimentally demonstrate spectral manipulation of lasing modes by creating cleaved-coupled cavities in gallium nitride (GaN) nanowires. Lasing operation at a single UV wavelength at room temperature was achieved using nanoscale gaps to create the smallest cleaved-coupled cavities to date. Besides the reduced number of lasing modes, the cleaved-coupled nanowires also operate with a lower threshold gain than that of the individual component nanowires. Good agreement was found between the measured lasing spectra and the predicted spectral modes obtained by simulating optical coupling properties. This agreement between theory and experiment presents design principles to rationally control the lasing modes in cleaved-coupled nanowire lasers. PMID:23284173

Post-cast EDM method for reducing the thickness of a turbine nozzle wall

DOEpatents

Jones, Raymond Joseph; Bojappa, Parvangada Ganapathy; Kirkpatrick, Francis Lawrence; Schotsch, Margaret Jones; Rajan, Rajiv; Wei, Bin

2002-01-01

A post-cast EDM process is used to remove material from the interior surface of a nozzle vane cavity of a turbine. A thin electrode is passed through the cavity between opposite ends of the nozzle vane and displaced along the interior nozzle wall to remove the material along a predetermined path, thus reducing the thickness of the wall between the cavity and the external surface of the nozzle. In another form, an EDM process employing a profile as an electrode is disposed in the cavity and advanced against the wall to remove material from the wall until the final wall thickness is achieved, with the interior wall surface being complementary to the profile surface.

Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering.

PubMed

Tao, Ye; Xu, Lijia; Zhang, Zhen; Chen, Runfeng; Li, Huanhuan; Xu, Hui; Zheng, Chao; Huang, Wei

2016-08-03

Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor-resonance-acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic.

Palm-top-size, 1.5 kW peak-power, and femtosecond (160 fs) diode-pumped mode-locked Yb+3:KY(WO4)2 solid-state laser with a semiconductor saturable absorber mirror.

PubMed

Yamazoe, Shogo; Katou, Masaki; Adachi, Takashi; Kasamatsu, Tadashi

2010-03-01

We report a palm-top-size femtosecond diode-pumped mode-locked Yb(+3):KY(WO(4))(2) solid-state laser with a semiconductor saturable absorber mirror utilizing soliton mode locking for shortening the cavity to 50 mm. An average output power of 680 mW and a pulse width of 162 fs were obtained at 1045 nm with a repetition rate of 2.8 GHz, which led to a peak power of 1.5 kW. Average power fluctuations of a modularized laser source were found to be +/-10% for the free-running 3000 h operation and +/-1% for the power-controlled 2000 h operation.

Direct photonic coupling of a semiconductor quantum dot and a trapped ion.

PubMed

Meyer, H M; Stockill, R; Steiner, M; Le Gall, C; Matthiesen, C; Clarke, E; Ludwig, A; Reichel, J; Atatüre, M; Köhl, M

2015-03-27

Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of a Yb^{+} ion. We ameliorate the effect of the 60-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the σ_{z} projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum-state transfer in a hybrid photonic network.

Silicon-Chip-Based Optical Frequency Combs

DTIC Science & Technology

2015-10-26

waveform generation, frequency metrology, and astronomical spectrograph calibration [2,3,4]. Traditionally, modelocked solid-state and fiber lasers have...different external-cavity diode lasers covering a total tuning range between 1450 nm and 1640 nm. Lensed fibers are used to couple into and out of the...cavity resonance of a Si3N4 microring resonator with a single-frequency tunable diode laser amplified by a ytterbium-doped fiber amplifier. We use a

Apparatus for connecting aligned abutted tubes

DOEpatents

Williams, R.E.

1984-11-29

An apparatus for connecting abutted tubes and for maintaining their rotary alignment during connection. The apparatus comprises first and second tubes, a rotation prevention element, a collar and a retainer. Each tube has inside and outside walls, and first and second ends, each end having an inside and outside edge. The first tube has portions defining a first plurality of cavities located at the outside edge of its first end. An external threaded portion is on the outside wall of the first tube and next to the first plurality of cavities. The second tube has portions defining a second plurality of cavities located at the outside edge of its first end. The first plurality has a different number than the second plurality. The first ends of the first and second tubes have substantially the same outside diameter and are abutted during connection so that an orifice is formed whenever first and second tube cavities substantially overlap. A rotation prevension element is placed in the orifice to prevent rotation of the first and second tubes. A collar with an internal threaded portion is slidably disposed about the second tube. The internal threaded portion engages the external threaded portion of the first tube to connect the tubes. A lip connected to the collar prevents separation of the collar from the second tube.

The effects of alterations in the osseous external auditory canal on perceived sound quality.

PubMed

van Spronsen, Erik; Brienesse, Patrick; Ebbens, Fenna A; Waterval, Jerome J; Dreschler, Wouter A

2015-10-01

To evaluate the perceptual effect of the altered shape of the osseous external auditory canal (OEAC) on sound quality. Prospective study. Twenty subjects with normal hearing were presented with six simulated sound conditions representing the acoustic properties of six different ear canals (three normal ears and three cavities). The six different real ear unaided responses of these ear canals were used to filter Dutch sentences, resulting in six simulated sound conditions. A seventh unfiltered reference condition was used for comparison. Sound quality was evaluated using paired comparison ratings and a visual analog scale (VAS). Significant differences in sound quality were found between the normal and cavity conditions (all P < .001) using both the seven-point paired comparison rating and the VAS. No significant differences were found between the reference and normal conditions. Sound quality deteriorates when the OEAC is altered into a cavity. This proof of concept study shows that the altered acoustic quality of the OEAC after radical cavity surgery may lead to a clearly perceived deterioration in sound quality. Nevertheless, some questions remain about the extent to which these changes are affected by habituation and by other changes in middle ear anatomy and functionality. 4 © 2015 The American Laryngological, Rhinological and Otological Society, Inc.

Integrated high-order surface diffraction gratings for diode lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zolotarev, V V; Leshko, A Yu; Pikhtin, N A

2015-12-31

High-order surface diffraction gratings acting as a distributed Bragg reflector (DBR) in mesa stripe semiconductor lasers (λ = 1030 nm) have been studied theoretically and experimentally. Higher order interfering radiation modes (IRMs), which propagate off the plane of the waveguide, have been shown to have a crucial effect on the reflection and transmission spectra of the DBR. The decrease in the reflectivity of the DBR in response to the increase in the diffraction efficiency of these modes may reach 80% and more. According to theoretical analysis results, the intensity of the higher order IRMs is determined by the geometry ofmore » the DBR groove profile. Experimental data demonstrate that the noncavity modes are responsible for parasitic light leakage losses in the laser cavity. It has been shown that, in the case of nonoptimal geometry of the grating groove profile, the overall external differential quantum efficiency of the parasitic laser emission may exceed 45%, which is more than half of the laser output power. The optimal geometry of the DBR groove profile is trapezoidal, with the smallest possible lower base. Experimental evidence has been presented that this geometry considerably reduces the power of the higher order IRMs and minimises the parasitic light leakage loss. (lasers)« less

Auto-locking waveguide amplifier system for lidar and magnetometric applications

NASA Astrophysics Data System (ADS)

Pouliot, A.; Beica, H. C.; Carew, A.; Vorozcovs, A.; Carlse, G.; Kumarakrishnan, A.

2018-02-01

We describe a compact waveguide amplifier system that is suitable for optically pumping rubidium magnetometers. The system consists of an auto-locking vacuum-sealed external cavity diode laser, a semiconductor tapered amplifier and a pulsing unit based on an acousto-optic modulator. The diode laser utilises optical feedback from an interference filter to narrow the linewidth of an inexpensive laser diode to 500 kHz. This output is scannable over an 8 GHz range (at 780 nm) and can be locked without human intervention to any spectral marker in an expandable library of reference spectra, using the autolocking controller. The tapered amplifier amplifies the output from 50 mW up to 2 W with negligible distortions in the spectral quality. The system can operate at visible and near infrared wavelengths with MHz repetition rates. We demonstrate optical pumping of rubidium vapour with this system for magnetometric applications. The magnetometer detects the differential absorption of two orthogonally polarized components of a linearly polarized probe laser following optical pumping by a circularly polarized pump laser. The differential absorption signal is studied for a range of pulse lengths, pulse amplitudes and DC magnetic fields. Our results suggest that this laser system is suitable for optically pumping spin-exchange free magnetometers.

Efficient upconversion-pumped continuous wave Er3+:LiLuF4 lasers

NASA Astrophysics Data System (ADS)

Moglia, Francesca; Müller, Sebastian; Reichert, Fabian; Metz, Philip W.; Calmano, Thomas; Kränkel, Christian; Heumann, Ernst; Huber, Günter

2015-04-01

We report on detailed spectroscopic investigations and efficient visible upconversion laser operation of Er3+:LiLuF4. This material allows for efficient resonant excited-state-absorption (ESA) pumping at 974 nm. Under spectroscopic conditions without external feedback, ESA at the laser wavelength of 552 nm prevails stimulated emission. Under lasing conditions in a resonant cavity, the high intracavity photon density bleaches the ESA at 552 nm, allowing for efficient cw laser operation. We obtained the highest output power of any room-temperature crystalline upconversion laser. The laser achieves a cw output power of 774 mW at a slope efficiency of 19% with respect to the incident pump power delivered by an optically-pumped semiconductor laser. The absorption efficiency of the pump radiation is estimated to be below 50%. To exploit the high confinement in waveguides for this laser, we employed femtosecond-laser pulses to inscribe a cladding of parallel tracks of modified material into Er3+:LiLuF4 crystals. The core material allows for low-loss waveguiding at pump and laser wavelengths. Under Ti:sapphire pumping at 974 nm, the first crystalline upconversion waveguide laser has been realized. We obtained waveguide-laser operation with up to 10 mW of output power at 553 nm.

Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator.

PubMed

Castellano, Fabrizio; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Vitiello, Miriam S

2016-03-15

Mode-locked comb sources operating at optical frequencies underpin applications ranging from spectroscopy and ultrafast physics, through to absolute frequency measurements and atomic clocks. Extending their operation into the terahertz frequency range would greatly benefit from the availability of compact semiconductor-based sources. However, the development of any compact mode-locked THz laser, which itself is inherently a frequency comb, has yet to be achieved without the use of an external stimulus. High-power, electrically pumped quantum cascade lasers (QCLs) have recently emerged as a promising solution, owing to their octave spanning bandwidths, the ability to achieve group-velocity dispersion compensation and the possibility of obtaining active mode-locking. Here, we propose an unprecedented compact architecture to induce both frequency and amplitude self-modulation in a THz QCL. By engineering a microwave avalanche oscillator into the laser cavity, which provides a 10 GHz self-modulation of the bias current and output power, we demonstrate multimode laser emission centered around 3 THz, with distinct multiple sidebands. The resulting microwave amplitude and frequency self-modulation of THz QCLs opens up intriguing perspectives, for engineering integrated self-mode-locked THz lasers, with impact in fields such as nano- and ultrafast photonics and optical metrology.

Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator

PubMed Central

Castellano, Fabrizio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles; Vitiello, Miriam S.

2016-01-01

Mode-locked comb sources operating at optical frequencies underpin applications ranging from spectroscopy and ultrafast physics, through to absolute frequency measurements and atomic clocks. Extending their operation into the terahertz frequency range would greatly benefit from the availability of compact semiconductor-based sources. However, the development of any compact mode-locked THz laser, which itself is inherently a frequency comb, has yet to be achieved without the use of an external stimulus. High-power, electrically pumped quantum cascade lasers (QCLs) have recently emerged as a promising solution, owing to their octave spanning bandwidths, the ability to achieve group-velocity dispersion compensation and the possibility of obtaining active mode-locking. Here, we propose an unprecedented compact architecture to induce both frequency and amplitude self-modulation in a THz QCL. By engineering a microwave avalanche oscillator into the laser cavity, which provides a 10 GHz self-modulation of the bias current and output power, we demonstrate multimode laser emission centered around 3 THz, with distinct multiple sidebands. The resulting microwave amplitude and frequency self-modulation of THz QCLs opens up intriguing perspectives, for engineering integrated self-mode-locked THz lasers, with impact in fields such as nano- and ultrafast photonics and optical metrology. PMID:26976199

Integrated semiconductor twin-microdisk laser under mutually optical injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due tomore » strong optical interaction between the two microdisks.« less

Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

2002-01-01

An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

Mid-Ir Cavity Ring-Down Spectrometer for Biological Trace Nitric Oxide Detection

NASA Astrophysics Data System (ADS)

Kan, Vincent; Ragab, Ahemd; Stsiapura, Vitali; Lehmann, Kevin K.; Gaston, Benjamin M.

2011-06-01

S-nitrosothiols have received much attention in biochemistry and medicine as donors of nitrosonium ion (NO^+) and nitric oxide (NO) - physiologically active molecules involved in vasodilation and signal transduction. Determination of S-nitrosothiols content in cells and tissues is of great importance for fundamental research and medical applications. We will report on our ongoing development of a instrument to measure trace levels of nitric oxide gas (NO), released from S-nitrosothiols after exposure to UV light (340 nm) or reaction with L-Cysteine+CuCl mixture. The instrument uses the method of cavity ring-down spectroscopy, probing rotationally resolved lines in the vibrational fundamental transition near 5.2 μm. The laser source is a continuous-wave, room temperature external cavity quantum cascade laser. An acousto-optic modulator is used to abruptly turn off the optical power incident on the cavity when the laser and cavity pass through resonance.

Method of laminating structural members

NASA Technical Reports Server (NTRS)

Heier, W. C. (Inventor)

1974-01-01

A laminate is obtained by providing a lightweight core material, such as a honeycombed plastic or metal, within the cavity defined by an annular mold cavity frame. Face sheets, which are to be bonded to the core material, are provided on opposite sides of the frame and extend over the frame, thus sealing the core material in the cavity. An adhesive is provided between the core material and the face sheets and the combined thickness of the core material and adhesive is a close fit within the opposed face sheets. A gas tight seal, such as an O-ring gasket, is provided between the frame and the face sheet members to form a gas tight cavity between the face sheet members and the frame. External heat and pressure are used to bond the face sheets to the core material. Gas pressure is introduced into the sealed cavity to minimize out-gasing of the adhesive.

Penta-P2X (X=C, Si) monolayers as wide-bandgap semiconductors: A first principles prediction

NASA Astrophysics Data System (ADS)

Naseri, Mosayeb; Lin, Shiru; Jalilian, Jaafar; Gu, Jinxing; Chen, Zhongfang

2018-06-01

By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanomaterials, namely P2X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the electronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps (2.76 eV and 2.69 eV, respectively) which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and exceptional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.

Tunability of temperature dependent THz photonic band gaps in 1-D photonic crystals composed of graded index materials and semiconductor InSb

NASA Astrophysics Data System (ADS)

Singh, Bipin K.; Pandey, Praveen C.; Rastogi, Vipul

2018-05-01

Tunable temperature dependent terahertz photonic band gaps (PBGs) in one-dimensional (1-D) photonic crystal composed of alternating layers of graded index and semiconductor materials are demonstrated. Results show the influence of temperature, geometrical parameters, grading profile and material damping factor on the PBGs. Number of PBG increases with increasing the layer thickness and their bandwidth can be tuned with external temperature and grading parameters. Lower order band gap is more sensitive to the temperature which shows increasing trend with temperature, and higher order PBGs can also be tuned by controlling the external temperature. Band edges of PBGs are shifted toward higher frequency side with increasing the temperature. Results show that the operational frequencies of PBGs are unaffected when loss involved. This work enables to design tunable Temperature dependent terahertz photonic devices such as reflectors, sensors and filters etc.

Chemical detection and laser wavelength stabilization employing spectroscopic absorption via laser compliance voltage sensing

DOEpatents

Taubman, Matthew S.; Phillips, Mark C.

2016-01-12

Systems and methods are disclosed that provide a direct indication of the presence and concentration of an analyte within the external cavity of a laser device that employ the compliance voltage across the laser device. The systems can provide stabilization of the laser wavelength. The systems and methods can obviate the need for an external optical detector, an external gas cell, or other sensing region and reduce the complexity and size of the sensing configuration.

Ultra-Low Threshold Vertical-Cavity Surface-Emitting Lasers for USAF Applications

DTIC Science & Technology

2005-01-01

molecular beam epitaxy , semiconductors, finite element method, modeling and simulation, oxidation furnace 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...Patterson Air Force Base). Device material growth was accomplished by means of molecular beam epitaxy (MBE) using a Varian GENII MBE system owned by the...grown by molecular beam epitaxy on a GaAs substrate. Vertical posts, with square and circular cross sections ranging in size from 5 to 40 microns

Optoelectronic Devices and Materials

NASA Astrophysics Data System (ADS)

Sweeney, Stephen; Adams, Alfred

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and GaSb and their alloys due to their direct band gap. Understanding the properties of these materials has been of vital importance in the development of optoelectronic devices. Since the first demonstration of a semiconductor laser in the early 1960s, optoelectronic devices have been produced in their millions, pervading our everyday lives in communications, computing, entertainment, lighting and medicine. It is perhaps their use in optical-fibre communications that has had the greatest impact on humankind, enabling high-quality and inexpensive voice and data transmission across the globe. Optical communications spawned a number of developments in optoelectronics, leading to devices such as vertical-cavity surface-emitting lasers, semiconductor optical amplifiers, optical modulators and avalanche photodiodes. In this chapter we discuss the underlying theory of operation of the most important optoelectronic devices. The influence of carrier-photon interactions is discussed in the context of producing efficient emitters and detectors. Finally we discuss how the semiconductor band structure can be manipulated to enhance device properties using quantum confinement and strain effects, and how the addition of dilute amounts of elements such as nitrogen is having a profound effect on the next generation of optoelectronic devices.

Real-time observation of fluctuations at the driven-dissipative Dicke phase transition

PubMed Central

Brennecke, Ferdinand; Mottl, Rafael; Baumann, Kristian; Landig, Renate; Donner, Tobias; Esslinger, Tilman

2013-01-01

We experimentally study the influence of dissipation on the driven Dicke quantum phase transition, realized by coupling external degrees of freedom of a Bose–Einstein condensate to the light field of a high-finesse optical cavity. The cavity provides a natural dissipation channel, which gives rise to vacuum-induced fluctuations and allows us to observe density fluctuations of the gas in real-time. We monitor the divergence of these fluctuations over two orders of magnitude while approaching the phase transition, and observe a behavior that deviates significantly from that expected for a closed system. A correlation analysis of the fluctuations reveals the diverging time scale of the atomic dynamics and allows us to extract a damping rate for the external degree of freedom of the atoms. We find good agreement with our theoretical model including dissipation via both the cavity field and the atomic field. Using a dissipation channel to nondestructively gain information about a quantum many-body system provides a unique path to study the physics of driven-dissipative systems. PMID:23818599

High-power lightweight external-cavity quantum cascade lasers

NASA Astrophysics Data System (ADS)

Day, Timothy; Takeuchi, Eric B.; Weida, Miles; Arnone, David; Pushkarsky, Michael; Boyden, David; Caffey, David

2009-05-01

Commercially available quantum cascade gain media has been integrated with advanced coating and die attach technologies, mid-IR micro-optics and telecom-style assembly and packaging to yield cutting edge performance. When combined into Daylight's external-cavity quantum cascade laser (ECqcL) platform, multi-Watt output power has been obtained. Daylight will describe their most recent results obtained from this platform, including high cw power from compact hermetically sealed packages and narrow spectral linewidth devices. Fiber-coupling and direct amplitude modulation from such multi-Watt lasers will also be described. In addition, Daylight will present the most recent results from their compact, portable, battery-operated "thermal laser pointers" that are being used for illumination and aiming applications. When combined with thermal imaging technology, such devices provide significant benefits in contrast and identification.

Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

PubMed

Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

2011-08-01

We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.