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Sample records for extreme ultraviolet euv

  1. The Extreme Ultraviolet (EUV) Instrument for the MAVEN Mission

    NASA Technical Reports Server (NTRS)

    Chamberlin, Phillip C.

    2012-01-01

    The Mars Atmosphere and Volatile Evolution Mission (MAVEN) will explore the variability in the planet's upper atmosphere and ionosphere that is dominated by interactions with the sun, specifically the high-energy photons in the soft X-ray and extreme ultraviolet wavelengths as well as interactions with the solar wind. Scientists will use MAVEN data to determine the current loss rate of volatile compounds from the Mars atmosphere, then extrapolate back in time in order to give historical estimations of state of the Mars atmosphere and climate, its ability to sustain liquid water, and the potential for the Martian habitability. The EUV instrument is critical in measuring the Space Weather driver of this atmospheric variability. It will directly observe a three EUV wavelength ranges and their variability due to solar flares (time scales of seconds to hours) as well as active region evolution (months), which will then act as proxies for a model to determine the entire 0.1-200 nm solar spectrum at all times during the MAVEN mission. These EUV measurements and models results will compliment the other instruments that will provide direct in-situ as well as remote sensing observations of the Martian atmospheric response to this solar driver. This presentation will be an introduction of this instrument and its science measurements and goals to the larger community, as well as a status report on its progress.

  2. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOEpatents

    Cohen, Simon J; Jeong, Hwan J; Shafer, David R

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  3. Serendipitous EUV sources detected during the first year of the Extreme Ultraviolet Explorer right angle program

    NASA Technical Reports Server (NTRS)

    Mcdonald, K.; Craig, N.; Sirk, M. M.; Drake, J. J.; Fruscione, A.; Vallerga, J. V.; Malina, R. F.

    1994-01-01

    We report the detection of 114 extreme ultraviolet (EUV; 58 - 740 A) sources, of which 99 are new serendipitous sources, based on observations made with the imaging telescopes on board the Extreme Ultraviolet Explorer (EUVE) during the Right Angle Program (RAP). These data were obtained using the survey scanners and the Deep Survey instrument during the first year of the spectroscopic guest observer phase of the mission, from January 1993 to January 1994. The data set consists of 162 discrete pointings whose exposure times are typically two orders of magnitude longer than the average exposure times during the EUVE all-sky survey. Based on these results, we can expect that EUVE will serendipitously detect approximately 100 new EUV sources per year, or about one new EUV source per 10 sq deg, during the guest observer phase of the EUVE mission. New EUVE sources of note include one B star and three extragalactic objects. The B star (HR 2875, EUVE J0729 - 38.7) is detected in both the Lexan/B (approximately 100 A) and Al/Ti/C (approximately 200 A) bandpasses, and the detection is shown not to be a result of UV leaks. We suggest that we are detecting EUV and/or soft x rays from a companion to the B star. Three sources, EUVE J2132+10.1, EUVE J2343-14.9, and EUVE J2359-30.6 are identified as the active galactic nuclei MKN 1513, MS2340.9-1511, and 1H2354-315, respectively.

  4. Extreme ultraviolet (EUV) surface modification of polytetrafluoroethylene (PTFE) for control of biocompatibility

    NASA Astrophysics Data System (ADS)

    Ahad, Inam Ul; Butruk, Beata; Ayele, Mesfin; Budner, Bogusław; Bartnik, Andrzej; Fiedorowicz, Henryk; Ciach, Tomasz; Brabazon, Dermot

    2015-12-01

    Extreme ultraviolet (EUV) surface modification of polytetrafluoroethylene (PTFE) was performed in order to enhance the degree of biocompatibility. Polymer samples were irradiated by different number of EUV shots using a laser-plasma based EUV source in the presence of nitrogen gas. The physical and chemical properties of EUV modified PTFE samples were studied using Atomic Force Microscopy, X-ray photoelectron spectroscopy and water contact angle (WCA) methods. Pronounced wall type micro and nano-structures appeared on the EUV treated polymer surfaces resulting in increased surface roughness and hydrophobicity. Stronger cell adhesion and good cell morphology were observed on EUV modified surfaces by in-vitro cell culture studies performed using L929 fibroblasts.

  5. Erosion resistant nozzles for laser plasma extreme ultraviolet (EUV) sources

    DOEpatents

    Kubiak, Glenn D.; Bernardez, II, Luis J.

    2000-01-04

    A gas nozzle having an increased resistance to erosion from energetic plasma particles generated by laser plasma sources. By reducing the area of the plasma-facing portion of the nozzle below a critical dimension and fabricating the nozzle from a material that has a high EUV transmission as well as a low sputtering coefficient such as Be, C, or Si, it has been shown that a significant reduction in reflectance loss of nearby optical components can be achieved even after exposing the nozzle to at least 10.sup.7 Xe plasma pulses.

  6. Carbon contamination of extreme ultraviolet (EUV) mask and its effect on imaging

    SciTech Connect

    Fan, Yu-Jen; Yankulin, Leonid; Antohe, Alin; Garg, Rashi; Thomas, Petros; Mbanaso, Chimaobi; Wuest, Andreas; Goodwin, Frank; Huh, Sungmin; Naulleau, Patrick; Goldlberg, Kenneth; Mochi, Iacopo; Denbeaux, Gregory

    2009-02-02

    Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered throughput and potential effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask. Contaminated features were then inspected with a reticle scanning electron microscope (SEM) and printed with the SEMA TECH Berkeley Microfield-Exposure tool (MET) [1]. In addition, the mask was analyzed using the SEMA TECH Berkeley Actinic-Inspection tool (AIT) [2] to determine the effect of carbon contamination on the absorbing features and printing performance. To understand the contamination topography, simulations were performed based on calculated aerial images and resist parameters. With the knowledge of the topography, simulations were then used to predict the effect of other thicknesses of the contamination layer, as well as the imaging performance on printed features.

  7. Curved focal plane extreme ultraviolet detector array for a EUV camera on CHANG E lander.

    PubMed

    Ni, Q; Song, K; Liu, S; He, L; Chen, B; Yu, W

    2015-11-30

    A novel curved focal plane extreme ultraviolet (EUV) detector array designed for a moon-based EUV camera is demonstrated. The curved focal plane detector array operating in a pulse-counting mode consists of a curved microchannel plate (MCP) stack and an induced charge wedge-strip anode (WSA). The curved MCP is fabricated by firstly thermally slumping of the MCPs, and then followed by optical polishing and core glass etching. By using this technology, curved MCPs with a length-to-diameter (L/D) ratio of 80:1 and a radius of curvature of 150 mm have been successfully achieved. The performance of the curved MCP detector is fully characterized in terms of the background noise, pulse height distribution, gain, image linearity and spatial resolution. It is measured that a spatial resolution of 7.13 lp/mm can be achieved with a background noise of less than 0.3 counts/cm2⋅s. The characterization results indicate that the curved focal plane detector can fulfill the requirements of the moon-based EUV camera. PMID:26698708

  8. Laser plasma sources of soft x-rays and extreme ultraviolet (EUV) for application in science and technology

    NASA Astrophysics Data System (ADS)

    Bartnik, Andrzej; Wachulak, Przemysław; Jarocki, Roman; Kostecki, Jerzy; Szczurek, Mirosław; Adjei, Daniel; Ahad, Inam Ul; Ayele, Mesfin G.; Fok, Tomasz; Szczurek, Anna; Torrisi, Alfio; Wegrzyński, Łukasz; Fiedorowicz, Henryk

    2015-05-01

    Laser plasma sources of soft x-rays and extreme ultraviolet (EUV) developed in our laboratory for application in various areas of technology and science are presented. The sources are based on a laser-irradiated gas puff target approach. The targets formed by pulsed injection of gas under high-pressure are irradiated with nanosecond laser pulses from Nd:YAG lasers. We use commercial lasers generating pulses with time duration from 1ns to 10ns and energies from 0.5J to 10J at 10Hz repetition rate. The gas puff targets are produced using a double valve system equipped with a special nozzle to form a double-stream gas puff target which secures high conversion efficiency without degradation of the nozzle. The use of a gas puff target instead of a solid target makes generation of laser plasmas emitting soft x-rays and EUV possible without target debris production. The sources are equipped with various optical systems, including grazing incidence axisymmetric ellipsoidal mirrors, a "lobster eye" type grazing incidence multi-foil mirror, and an ellipsoidal mirror with Mo/Si multilayer coating, to collect soft x-ray and EUV radiation and form the radiation beams. In this paper new applications of these sources in various fields, including soft x-ray and EUV imaging in nanoscale, EUV radiography and tomography, EUV materials processing and modification of polymer surfaces, EUV photoionization of gases, radiobiology and soft x-ray contact microscopy are reviewed.

  9. Extreme ultraviolet (EUV) and FUV calibration facility for special sensor ultraviolet limb imager (SSULI)

    NASA Astrophysics Data System (ADS)

    Boyer, Craig N.; Osterman, Steven N.; Thonnard, Stefan E.; McCoy, Robert P.; Williams, J. Z.; Parker, S. E.

    1994-09-01

    A facility for calibrating far ultraviolet and extreme ultraviolet instruments has recently been completed at the Naval Research Laboratory. Our vacuum calibration vessel is 2-m in length, 1.67-m in diameter, and can accommodate optical test benches up to 1.2-m wide by 1.5-m in length. A kinematically positioned frame with four axis precision pointing capability of 10 microns for linear translation and .01 degrees for rotation is presently used during vacuum optical calibration of SSULI. The chamber was fabricated from 304 stainless steel and polished internally to reduce surface outgassing. A dust-free environment is maintained at the rear of the vacuum chamber by enclosing the 2-m hinged vacuum access door in an 8 ft. by 8 ft. class 100 clean room. Every effort was made to obtain an oil-free environment within the vacuum vessel. Outgassing products are continually monitored with a 1 - 200 amu residual gas analyzer. An oil-free claw and vane pump evacuates the chamber to 10-2 torr through 4 in. diameter stainless steel roughing lines. High vacuum is achieved and maintained with a magnetically levitated 480 l/s turbo pump and a 3000 l/s He4 cryopump. Either of two vacuum monochrometers, a 1-m f/10.4 or a 0.2-m f/4.5 are coaxially aligned with the optical axis of the chamber and are used to select single UV atomic resonance lines from a windowless capillary or penning discharge UV light source. A calibrated channeltron detector is coaxially mounted with the SSULI detector during calibration. All vacuum valves, the cooling system for the cryopump compressor, and the roughing pump are controlled through optical fibers which are interfaced to a computer through a VME board. Optical fibers were chosen to ensure that complete electrical isolation is maintained between the computer and the vacuum system valves-solenoids and relays.

  10. Chemical Effect of Dry and Wet Cleaning of the Ru Protective Layer of the Extreme ultraviolet (EUV) Lithography Reflector

    SciTech Connect

    Belau, Leonid; Park, Jeong Y.; Liang, Ted; Seo, Hyungtak; Somorjai, Gabor A.

    2009-04-10

    The authors report the chemical influence of cleaning of the Ru capping layer on the extreme ultraviolet (EUV) reflector surface. The cleaning of EUV reflector to remove the contamination particles has two requirements: to prevent corrosion and etching of the reflector surface and to maintain the reflectivity functionality of the reflector after the corrosive cleaning processes. Two main approaches for EUV reflector cleaning, wet chemical treatments [sulfuric acid and hydrogen peroxide mixture (SPM), ozonated water, and ozonated hydrogen peroxide] and dry cleaning (oxygen plasma and UV/ozone treatment), were tested. The changes in surface morphology and roughness were characterized using scanning electron microscopy and atomic force microscopy, while the surface etching and change of oxidation states were probed with x-ray photoelectron spectroscopy. Significant surface oxidation of the Ru capping layer was observed after oxygen plasma and UV/ozone treatment, while the oxidation is unnoticeable after SPM treatment. Based on these surface studies, the authors found that SPM treatment exhibits the minimal corrosive interactions with Ru capping layer. They address the molecular mechanism of corrosive gas and liquid-phase chemical interaction with the surface of Ru capping layer on the EUV reflector.

  11. Spectral investigations of photoionized plasmas induced in atomic and molecular gases using nanosecond extreme ultraviolet (EUV) pulses

    SciTech Connect

    Bartnik, A.; Fiedorowicz, H.; Wachulak, P.

    2014-07-15

    In this paper, results of spectral investigations of low temperature photoionized plasmas, created by irradiation of gases with intense pulses of extreme ultraviolet (EUV) radiation from a laser-produced plasma (LPP) source, are presented. The LPP source was based on a double-stream KrXe/He gas-puff target irradiated with 4 ns/0.8 J/10 Hz Nd:YAG laser pulses. The most intense emission from the source spanned a relatively narrow spectral region λ ≈ 10–12 nm; however, spectrally integrated intensity at longer wavelengths was also significant. The EUV beam was focused on a gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of gases resulted in formation of photoionized plasmas emitting radiation in the EUV range. Radiation spectra, measured for plasmas produced in various gases, are dominated by emission lines, originating from single charged ions. Significant differences in spectral intensities and distributions between plasmas created in neon and molecular gases were observed.

  12. Extreme ultraviolet and soft X-ray imaging with compact, table top laser plasma EUV and SXR sources

    NASA Astrophysics Data System (ADS)

    Wachulak, P. W.; Bartnik, A.; Kostecki, J.; Wegrzynski, L.; Fok, T.; Jarocki, R.; Szczurek, M.; Fiedorowicz, H.

    2015-12-01

    We present a few examples of imaging experiments, which were possible using a compact laser-plasma extreme ultraviolet (EUV) and soft X-ray (SXR) source, based on a double stream gas puff target. This debris-free source was used in full-field EUV imaging to obtain magnified images of test samples, ZnO nanofibers and images of the membranes coated with salt crystals. The source was also employed for SXR microscopy in the "water-window" spectral range using grazing incidence Wolter type-I objective to image test samples and to perform the initial studies of biological objects. Gas puff target EUV source, spectrally tuned for 13.5 nm wavelength with multilayer mirror and thin film filters, was also used in variety of shadowgraphy experiments to study the density of newly developed modulated density gas puff targets. Finally, the source was also employed in EUV tomography experiments of low density objects with the goal to measure and optimize the density of the targets dedicated to high harmonic generation.

  13. Spectral investigations of photoionized plasmas induced in atomic and molecular gases using nanosecond extreme ultraviolet (EUV) pulses

    NASA Astrophysics Data System (ADS)

    Bartnik, A.; Fiedorowicz, H.; Wachulak, P.

    2014-07-01

    In this paper, results of spectral investigations of low temperature photoionized plasmas, created by irradiation of gases with intense pulses of extreme ultraviolet (EUV) radiation from a laser-produced plasma (LPP) source, are presented. The LPP source was based on a double-stream KrXe/He gas-puff target irradiated with 4 ns/0.8 J/10 Hz Nd:YAG laser pulses. The most intense emission from the source spanned a relatively narrow spectral region λ ≈ 10-12 nm; however, spectrally integrated intensity at longer wavelengths was also significant. The EUV beam was focused on a gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of gases resulted in formation of photoionized plasmas emitting radiation in the EUV range. Radiation spectra, measured for plasmas produced in various gases, are dominated by emission lines, originating from single charged ions. Significant differences in spectral intensities and distributions between plasmas created in neon and molecular gases were observed.

  14. In-flight estimation of gyro noise on the Upper Atmosphere Research Satellite (UARS) and Extreme Ultraviolet Explorer (EUVE) missions

    NASA Technical Reports Server (NTRS)

    Lee, M.; Crouse, P.; Harman, R.; Leid, Terry; Davis, W.; Underwood, S.

    1994-01-01

    This paper characterizes the low-frequency noise response of the Teledyne dry rotor inertial reference unit (DRIRU) gyroscopes on the Upper Atmosphere Research Satellite (UARS) and the Extreme Ultraviolet Explorer (EUVE). The accuracy of spacecraft attitude estimation algorithms that use gyro data for propagating the spacecraft attitude is sensitive to gyro noise. EUVE gyro data were processed to validate a single-axis gyro noise model, which is used onboard various spacecraft. The paper addresses the potential impact of temperature effects on the gyro noise model and the overall impact on attitude determination accuracy. The power spectral density (PSD) of the gyro noise is estimated from UARS in-flight data by Fast Fourier Transform (FFT). The role of actuator dynamics on the PSD function is also discussed.

  15. Extreme Ultraviolet Variability Experiment (EVE) Multiple EUV Grating Spectrographs (MEGS): Radiometric Calibrations and Results

    NASA Technical Reports Server (NTRS)

    Hock, R. A.; Woods, T. N.; Crotser, D.; Eparvier, F. G.; Woodraska, D. L.; Chamberlin, P. C.; Woods, E. C.

    2010-01-01

    The NASA Solar Dynamics Observatory (SDO), scheduled for launch in early 2010, incorporates a suite of instruments including the Extreme Ultraviolet Variability Experiment (EVE). EVE has multiple instruments including the Multiple Extreme ultraviolet Grating Spectrographs (MEGS) A, B, and P instruments, the Solar Aspect Monitor (SAM), and the Extreme ultraviolet SpectroPhotometer (ESP). The radiometric calibration of EVE, necessary to convert the instrument counts to physical units, was performed at the National Institute of Standards and Technology (NIST) Synchrotron Ultraviolet Radiation Facility (SURF III) located in Gaithersburg, Maryland. This paper presents the results and derived accuracy of this radiometric calibration for the MEGS A, B, P, and SAM instruments, while the calibration of the ESP instrument is addressed by Didkovsky et al. . In addition, solar measurements that were taken on 14 April 2008, during the NASA 36.240 sounding-rocket flight, are shown for the prototype EVE instruments.

  16. SOLAR-B Mission Extreme Ultraviolet (EUV) Imaging Spectrometer (EIS) Instrument Components

    NASA Technical Reports Server (NTRS)

    Doschek, George A.

    2001-01-01

    This Monthly Progress Report covers the reporting period July 2001 of the Detailed Design and Development through Launch plus Thirty Days, Phase C/D, for selected components and subsystems of the Extreme Ultraviolet Imaging Spectrometer (EIS) instrument, hereafter referred to as EIS Instrument Components. This document contains the program status through the reporting period and forecasts the status for the upcoming reporting period.

  17. Solar-B Mission Extreme Ultraviolet (EUV) Imaging Spectrometer (EIS) Instrument Components

    NASA Technical Reports Server (NTRS)

    Doschek, George A.

    2002-01-01

    This Monthly Progress Report covers the reporting period August 2002 of the Detailed Design and Development through Launch plus Thirty Days, Phase C/D, for selected components and subsystems of the Extreme ultraviolet Imaging Spectrometer (EIS) instrument, hereafter referred to as EIS Instrument Components. This document contains the program status through the reporting period and forecasts the status for the upcoming reporting period.

  18. SOLAR-B Mission Extreme Ultraviolet (EUV) Imaging Spectrometer (EIS) Instrument Components

    NASA Technical Reports Server (NTRS)

    Doschek, George A.

    2001-01-01

    This Monthly Progress Report covers the reporting period through June 2001, Phase C/D, Detailed Design and Development Through Launch Plus Thirty Days, for selected components and subsystems of the Extreme ultraviolet Imaging Spectrometer (EIS) instrument, hereafter referred to as EIS Instrument Components. This document contains the program status through the reporting period and forecasts the status for the upcoming reporting period.

  19. New model of iron spectra in the extreme ultraviolet and application to SERTS and EUV observations: A solar active region and capella

    NASA Technical Reports Server (NTRS)

    Brickhouse, N. S.; Raymond, J. C.; Smith, B. W.

    1995-01-01

    We report new predictions for the EUV spectral emission of FeIX-FeXXIV, based on data now available from the Solar EUV Rocket Telescope and Spectrograph (SERTS) and the Extreme Ultraviolet Explorer (EUVE) spectrometers. The iron spectral emission model is the first result of a larger effort to revise the Raymond & Smith model and to update the atomic rates. We present here predicted emissivities for selected densities and temperatures applicable to various astrophysical plasmas. Comparisons of our predicted spectra with two recent observations provide important tests of the atomic data. They also test to some extent some basic assumptions of coronal emission codes: optically thin spectral lines and ionization equilibrium.

  20. The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks

    SciTech Connect

    Belau, Leonid; Park, Jeong Y.; Liang, Ted; Somorjai, Gabor A.

    2008-06-07

    Contamination removal from extreme ultraviolet (EUV) mask surfaces is one of the most important aspects to improve reliability for the next generation of EUV lithography. We report chemical and morphological changes of the ruthenium (Ru) mask surface after oxygen plasma treatment using surface sensitive analytical methods: X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Chemical analysis of the EUV masks shows an increase in the subsurface oxygen concentration, Ru oxidation and surface roughness. XPS spectra at various photoelectron takeoff angles suggest that the EUV mask surface was covered with chemisorbed oxygen after oxygen plasma treatment. It is proposed that the Kirkendall effect is the most plausible mechanism that explains the Ru surface oxidation. The etching rate of the Ru capping layer by oxygen plasma was estimated to be 1.5 {+-} 0.2 {angstrom}/min, based on TEM cross sectional analysis.

  1. Extreme Ultraviolet Explorer Bright Source List

    NASA Technical Reports Server (NTRS)

    Malina, Roger F.; Marshall, Herman L.; Antia, Behram; Christian, Carol A.; Dobson, Carl A.; Finley, David S.; Fruscione, Antonella; Girouard, Forrest R.; Hawkins, Isabel; Jelinsky, Patrick

    1994-01-01

    Initial results from the analysis of the Extreme Ultraviolet Explorer (EUVE) all-sky survey (58-740 A) and deep survey (67-364 A) are presented through the EUVE Bright Source List (BSL). The BSL contains 356 confirmed extreme ultraviolet (EUV) point sources with supporting information, including positions, observed EUV count rates, and the identification of possible optical counterparts. One-hundred twenty-six sources have been detected longward of 200 A.

  2. The Extreme Ultraviolet Explorer mission

    NASA Technical Reports Server (NTRS)

    Welsh, Barry Y.

    1991-01-01

    The Extreme Ultraviolet Explorer (EUVE) is a NASA astronomy mission which will operate in the 70-760A spectral band. The science payload consists of three grazing incidence scanning telescopes and an EUV spectrometer/deep survey instrument. An overview of the planned mission profile is given, and the instrumentation which comprises the science payload is discussed. The EUVE is scheduled for launch in late August 1991.

  3. Up-down asymmetry measurement of tungsten distribution in large helical device using two extreme ultraviolet (EUV) spectrometers

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Morita, S.; Huang, X. L.; Oishi, T.; Goto, M.; Zhang, H. M.

    2016-11-01

    Two space-resolved extreme ultraviolet spectrometers working in wavelength ranges of 10-130 Å and 30-500 Å have been utilized to observe the full vertical profile of tungsten line emissions by simultaneously measuring upper- and lower-half plasmas of LHD, respectively. The radial profile of local emissivity is reconstructed from the measured vertical profile in the overlapped wavelength range of 30-130 Å and the up-down asymmetry is examined against the local emissivity profiles of WXXVIII in the unresolved transition array spectrum. The result shows a nearly symmetric profile, suggesting a good availability in the present diagnostic method for the impurity asymmetry study.

  4. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  5. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  6. A preliminary estimate of the EUVE cumulative distribution of exposure time on the unit sphere. [Extreme Ultra-Violet Explorer

    NASA Technical Reports Server (NTRS)

    Tang, C. C. H.

    1984-01-01

    A preliminary study of an all-sky coverage of the EUVE mission is given. Algorithms are provided to compute the exposure of the celestial sphere under the spinning telescopes, taking into account that during part of the exposure time the telescopes are blocked by the earth. The algorithms are used to give an estimate of exposure time at different ecliptic latitudes as a function of the angle of field of view of the telescope. Sample coverage patterns are also given for a 6-month mission.

  7. Pathways to Earth-like atmospheres. Extreme ultraviolet (EUV)-powered escape of hydrogen-rich protoatmospheres.

    PubMed

    Lammer, Helmut; Kislyakova, K G; Odert, P; Leitzinger, M; Schwarz, R; Pilat-Lohinger, E; Kulikov, Yu N; Khodachenko, M L; Güdel, M; Hanslmeier, M

    2011-12-01

    We discuss the evolution of the atmosphere of early Earth and of terrestrial exoplanets which may be capable of sustaining liquid water oceans and continents where life may originate. The formation age of a terrestrial planet, its mass and size, as well as the lifetime in the EUV-saturated early phase of its host star play a significant role in its atmosphere evolution. We show that planets even in orbits within the habitable zone of their host stars might not lose nebular- or catastrophically outgassed initial protoatmospheres completely and could end up as water worlds with CO2 and hydrogen- or oxygen-rich upper atmospheres. If an atmosphere of a terrestrial planet evolves to an N2-rich atmosphere too early in its lifetime, the atmosphere may be lost. We show that the initial conditions set up by the formation of a terrestrial planet and by the evolution of the host star's EUV and plasma environment are very important factors owing to which a planet may evolve to a habitable world. Finally we present a method for studying the discussed atmosphere evolution hypotheses by future UV transit observations of terrestrial exoplanets.

  8. The Storm-Time Plasmasphere as Seen by the Extreme Ultraviolet (EUV) Imager on the IMAGE Spacecraft

    NASA Technical Reports Server (NTRS)

    Gallagher, Dennis L.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    Many years of ground and space observations of the plasmasphere have established a basic understanding of the physics of these plasmas in the inner magnetosphere. However, many questions remain. The EUV Instrument on the IMAGE spacecraft is now providing the first ever global pictures of thermal helium in the plasmasphere. Detached plasma, the sunward extending convection tail, a night-time interior plasmaspheric density cavity, and strong azimuthal plasmaspheric structures are all being revealed. What are the properties of these structures? How do they evolve? What is their relationship to magnetic storms and other plasma populations? These are some of the questions that define the state of plasmaspheric physics, to which IMAGE is now contributing answers. The graphic evidence and preliminary analysis of these features will be presented and discussed.

  9. The extreme ultraviolet explorer mission

    NASA Astrophysics Data System (ADS)

    Bowyer, S.; Malina, R. F.

    The Extreme Ultraviolet Explorer (EUVE) mission, currently scheduled for launch in September 1991, is described. The primary purpose of the mission is to survey the celestial sphere for astronomical sources of extreme ultraviolet (EUV) radiation. The survey will be accomplished with the use of three EUV telescopes, each sensitive to a different segment of the EUV band. A fourth telescope will perform a high sensitivity search of a limited sample of the sky in the shortest wavelength bands. The all-sky survey will be carried out in the first six months of the mission and will be made in four bands, or colors, λλ70-180 Å, 170-250 Å, 400-600 Å, and 500-700 Å. The second phase of the mission, conducted entirely by Guest Observers selected by NASA, will be devoted to spectroscopic observations of EUV sources. The performance of the instrument components is described. The mirrors meet the requirements of the mission, with the best mirror having a full width half energy spread of 4'' and a surface finish of 20 Å. Prototype thin film bandpass filters have been flown on the Space Shuttle and their performance optimized. Prototype detectors have been developed which have 1680 × 1680 pixel imaging capability (RMS) and up to 80% quantum efficiency. A newly invented, high efficiency grazing incidence spectrometer using variable line-space gratings will provide spectral data with ~1 Å resolution. An end-to-end model of the mission, from a stellar source to the resulting scientific data, has been constructed. Hypothetical data from astronomical sources have been processed through this model and are shown.

  10. Extreme Ultraviolet Explorer Science Operation Center

    NASA Technical Reports Server (NTRS)

    Wong, G. S.; Kronberg, F. A.; Meriwether, H. D.; Wong, L. S.; Grassi, C. L.

    1993-01-01

    The EUVE Science Operations Center (ESOC) is a satellite payload operations center for the Extreme Ultraviolet Explorer project, located on the Berkeley campus of the University of California. The ESOC has the primary responsibility for commanding the EUVE telescopes and monitoring their telemetry. The ESOC is one of a very few university-based satellite operations facilities operating with NASA. This article describes the history, operation, and advantages of the ESOC as an on-campus operations center.

  11. Extreme ultraviolet lithography machine

    SciTech Connect

    Tichenor, D.A.; Kubiak, G.D.; Haney, S.J.; Sweeney, D.W.

    2000-02-29

    An extreme ultraviolet lithography (EUVL) machine or system is disclosed for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10--14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  12. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  13. Research in extreme ultraviolet and far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Bowyer, C. S.

    1985-01-01

    The Far Ultraviolet imager (FUVI) was flown on the Aries class sounding rocket 24.015, producing outstanding results. The diffuse extreme ultraviolet (EUV) background spectrometer which is under construction is described. It will be launched on the Black Brant sounding rocket flight number 27.086. Ongoing design studies of a high resolution spectrometer are discussed. This instrument incorporates a one meter normal incidence mirror and will be suitable for an advanced Spartan mission.

  14. Initial results from the extreme ultraviolet explorer

    NASA Technical Reports Server (NTRS)

    Bowyer, S.; Malina, R. F.

    1993-01-01

    Data obtained during the first five months of calibration and science operation of the Extreme Ultraviolet Explorer (EUVE) are presented. Spectra of an extragalactic object were obtained; the object is detectable to wavelenghts longer than 100 A, demonstrating that extragalactic EUV astronomy is possible. Spectra of a hot white dwarf, and a late-type star in quiescence and flaring are shown as examples of the type of spectrographic data obtainable with EUVE. Other objects for which broad band photometric mode data have been obtained and analyzed include an RS CVn star and several late-type stars. The backgrounds in the EUVE detectors are quite low and the character of the diffuse astronomical EUV background has been investigated using these very low rates. Evidence is presented showing that, contrary to previously published reports, EUVE is about three times more sensitive than the English Wide Field Camera in the short wavelength bandpass covered by both instruments. Only limited information has been extracted from the longer bandpasses coered only by EUVE. Nonetheless, the brightest EUV source in the sky, a B star, has been discovered and is detected only in these longer bandpasses.

  15. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  16. The Diffuse Extreme Ultraviolet Background

    NASA Technical Reports Server (NTRS)

    Vallerga, John; Slavin, Jonathan

    1996-01-01

    Observations of the diffuse EUV background towards 138 different directions using the spectrometers aboard the Extreme Ultraviolet Explorer satellite (EUVE) have been combined into a spectrum from 150A to 730A and represent an effective exposure of 18 million seconds. There is no significant evidence of any non-local line flux in the resultant spectrum such as that from a hot coronal plasma. These results are inconsistent with the Wisconsin C and B broad-band surveys assuming the source is a logT = 5.8 - 6.1 hot plasma in ionization equilibrium with solar abundances, confirming the previous result of Jelinksy, Vallerga and Edelstein) (hereafter Paper 1) using an observation along the ecliptic with the same instrument. To make these results consistent with the previous broad-band surveys, the plasma responsible for the emission must either be depleted in Fe by a factor of approximately 6, be behind an absorbing slab of neutral H with a column of 2 x 10(exp 19)/sq cm, or not be in collisional ionization equilibrium (CIE). One such non-CIE model (Breitswerdt and Schmutzier) that explains the soft x-ray results is also inconsistent with this EUV data.

  17. The Extreme Ultraviolet Explorer - Overview and calibration

    NASA Technical Reports Server (NTRS)

    Welsh, Barry Y.; Vallerga, John V.; Jelinsky, Pat; Vedder, Peter W.; Bowyer, Stuart

    1990-01-01

    The Extreme Ultraviolet Explorer (EUVE) is a NASA-funded astronomy mission that will operate in the 70 to 760 A band. The science payload, which has been designed and built by the Space Sciences Laboratory at the University of California, Berkeley, consists of three grazing incidence scanning telescopes and an EUV spectrometer/deep survey instrument. This paper gives details of the planned mission profile and an overview of the instrumentation that the science payload comprises. Topics such as the thermal design, contamination control, and details of the electronics system are discussed. Finally, the results of the calibration of the various subsystems that make up the EUVE instrumentation are reviewed, and the calibration plan for the integrated EUVE instruments is discussed.

  18. Gradient-based inverse extreme ultraviolet lithography.

    PubMed

    Ma, Xu; Wang, Jie; Chen, Xuanbo; Li, Yanqiu; Arce, Gonzalo R

    2015-08-20

    Extreme ultraviolet (EUV) lithography is the most promising successor of current deep ultraviolet (DUV) lithography. The very short wavelength, reflective optics, and nontelecentric structure of EUV lithography systems bring in different imaging phenomena into the lithographic image synthesis problem. This paper develops a gradient-based inverse algorithm for EUV lithography systems to effectively improve the image fidelity by comprehensively compensating the optical proximity effect, flare, photoresist, and mask shadowing effects. A block-based method is applied to iteratively optimize the main features and subresolution assist features (SRAFs) of mask patterns, while simultaneously preserving the mask manufacturability. The mask shadowing effect may be compensated by a retargeting method based on a calibrated shadowing model. Illustrative simulations at 22 and 16 nm technology nodes are presented to validate the effectiveness of the proposed methods. PMID:26368764

  19. Discovery of a new white dwarf in a binary system (EUVE 0720-317) in the Extreme Ultraviolet Explorer survey and implications for the late stages of stellar evolution

    NASA Technical Reports Server (NTRS)

    Vennes, Stephane; Thorstensen, John R.

    1994-01-01

    A new precataclysmic binary is identified in the Extreme Ultraviolet Explorer (EUVE) all-sky survey. The bright source EUVE 0720-317 shows a hot hydrogen-rich white dwarf optical continuum with overlying narrow Balmer-line emission. Using high signal-to-noise ratio spectroscopy in the 4100-6700 A range, we identify a late-type companion and find a 1.3d periodic modulation in the emission-line velocities and strengths. This is the signature of Feige 24-type close binary systems. We determine the components' spectral types (DAO and dM0-2), orbital velocities (K(sub DAO) = 104 +/- 12 km/s, K(sub dM) = 96 +/- 7 km/s), and systemic velocity (gamma = 15 +/- 12 km/s). A first estimate of the white dwarf gravitational redshift, gamma(sub g) = 45 +/- 20 km/s, and theoretical mass-radius relationships imply R(sub DAO) = 0.010-0.016 solar radius and M(sub DAO) = 0.55-0.90 solar mass. The orbital inclination is therefore i greater than or equal to 52 deg, consistent with the large amplitude variations found in H-alpha equivalent widths that imply i greater than or equal to 42 deg. We show that the discovery of new close WD + MS binary systems in extreme ultraviolet (EUV) sky surveys has important implications for theory of common-envelope evolution, in particular for the predicted close binary birthrate and orbital and stellar parameters.

  20. Extreme ultraviolet spectral irradiance measurements since 1946

    NASA Astrophysics Data System (ADS)

    Schmidtke, G.

    2015-03-01

    In the physics of the upper atmosphere the solar extreme ultraviolet (EUV) radiation plays a dominant role controlling most of the thermospheric/ionospheric (T/I) processes. Since this part of the solar spectrum is absorbed in the thermosphere, platforms to measure the EUV fluxes became only available with the development of rockets reaching altitude levels exceeding 80 km. With the availability of V2 rockets used in space research, recording of EUV spectra started in 1946 using photographic films. The development of pointing devices to accurately orient the spectrographs toward the sun initiated intense activities in solar-terrestrial research. The application of photoelectric recording technology enabled the scientists placing EUV spectrometers aboard satellites observing qualitatively strong variability of the solar EUV irradiance on short-, medium-, and long-term scales. However, as more measurements were performed more radiometric EUV data diverged due to the inherent degradation of the EUV instruments with time. Also, continuous recording of the EUV energy input to the T/I system was not achieved. It is only at the end of the last century that there was progress made in solving the serious problem of degradation enabling to monitore solar EUV fluxes with sufficient radiometric accuracy. The data sets available allow composing the data available to the first set of EUV data covering a period of 11 years for the first time. Based on the sophisticated instrumentation verified in space, future EUV measurements of the solar spectral irradiance (SSI) are promising accuracy levels of about 5% and less. With added low-cost equipment, real-time measurements will allow providing data needed in ionospheric modeling, e.g., for correcting propagation delays of navigation signals from space to earth. Adding EUV airglow and auroral emission monitoring by airglow cameras, the impact of space weather on the terrestrial T/I system can be studied with a spectral terrestrial

  1. Extreme ultraviolet photoionization of aldoses and ketoses

    NASA Astrophysics Data System (ADS)

    Shin, Joong-Won; Dong, Feng; Grisham, Michael E.; Rocca, Jorge J.; Bernstein, Elliot R.

    2011-04-01

    Gas phase monosaccharides (2-deoxyribose, ribose, arabinose, xylose, lyxose, glucose galactose, fructose, and tagatose), generated by laser desorption of solid sample pellets, are ionized with extreme ultraviolet photons (EUV, 46.9 nm, 26.44 eV). The resulting fragment ions are analyzed using a time of flight mass spectrometer. All aldoses yield identical fragment ions regardless of size, and ketoses, while also generating same ions as aldoses, yields additional features. Extensive fragmentation of the monosaccharides is the result the EUV photons ionizing various inner valence orbitals. The observed fragmentation patterns are not dependent upon hydrogen bonding structure or OH group orientation.

  2. Extreme Ultraviolet Explorer. Long look at the next window

    NASA Technical Reports Server (NTRS)

    Maran, Stephen P.

    1991-01-01

    The Extreme Ultraviolet Explorer (EUVE) will map the entire sky to determine the existence, direction, brightness, and temperature of thousands of objects that are sources of so-called extreme ultraviolet (EUV) radiation. The EUV spectral region is located between the x-ray and ultraviolet regions of the electromagnetic spectrum. From the sky survey by EUVE, astronomers will determine the nature of sources of EUV light in our galaxy, and infer the distribution of interstellar gas for hundreds of light years around the solar system. It is from this gas and the accompanying dust in space that new stars and solar systems are born and to which evolving and dying stars return much of their material in an endless cosmic cycle of birth, death, and rebirth. Besides surveying the sky, astronomers will make detailed studies of selected objects with EUVE to determine their physical properties and chemical compositions. Also, they will learn about the conditions that prevail and the processes at work in stars, planets, and other sources of EUV radiation, maybe even quasars. The EUVE mission and instruments are described. The objects that EUVE will likely find are described.

  3. Extreme ultraviolet Talbot interference lithography.

    PubMed

    Li, Wei; Marconi, Mario C

    2015-10-01

    Periodic nanopatterns can be generated using lithography based on the Talbot effect or optical interference. However, these techniques have restrictions that limit their performance. High resolution Talbot lithography is limited by the very small depth of focus and the demanding requirements in the fabrication of the master mask. Interference lithography, with large DOF and high resolution, is limited to simple periodic patterns. This paper describes a hybrid extreme ultraviolet lithography approach that combines Talbot lithography and interference lithography to render an interference pattern with a lattice determined by a Talbot image. As a result, the method enables filling the arbitrary shaped cells produced by the Talbot image with interference patterns. Detailed modeling, system design and experimental results using a tabletop EUV laser are presented. PMID:26480070

  4. Modeling extreme ultraviolet suppression of electrostatic analyzers

    SciTech Connect

    Gershman, Daniel J.; Zurbuchen, Thomas H.

    2010-04-15

    In addition to analyzing energy-per-charge ratios of incident ions, electrostatic analyzers (ESAs) for spaceborne time-of-flight mass spectrometers must also protect detectors from extreme ultraviolet (EUV) photons from the Sun. The required suppression rate often exceeds 1:10{sup 7} and is generally established in tests upon instrument design and integration. This paper describes a novel technique to model the EUV suppression of ESAs using photon ray tracing integrated into SIMION, the most commonly used ion optics design software for such instruments. The paper compares simulation results with measurements taken from the ESA of the Mass instrument flying onboard the Wind spacecraft. This novel technique enables an active inclusion of EUV suppression requirements in the ESA design process. Furthermore, the simulation results also motivate design rules for such instruments.

  5. Modeling extreme ultraviolet suppression of electrostatic analyzers.

    PubMed

    Gershman, Daniel J; Zurbuchen, Thomas H

    2010-04-01

    In addition to analyzing energy-per-charge ratios of incident ions, electrostatic analyzers (ESAs) for spaceborne time-of-flight mass spectrometers must also protect detectors from extreme ultraviolet (EUV) photons from the Sun. The required suppression rate often exceeds 1:10(7) and is generally established in tests upon instrument design and integration. This paper describes a novel technique to model the EUV suppression of ESAs using photon ray tracing integrated into SIMION, the most commonly used ion optics design software for such instruments. The paper compares simulation results with measurements taken from the ESA of the Mass instrument flying onboard the Wind spacecraft. This novel technique enables an active inclusion of EUV suppression requirements in the ESA design process. Furthermore, the simulation results also motivate design rules for such instruments.

  6. Plans for the extreme ultraviolet explorer data base

    NASA Technical Reports Server (NTRS)

    Marshall, Herman L.; Dobson, Carl A.; Malina, Roger F.; Bowyer, Stuart

    1988-01-01

    The paper presents an approach for storage and fast access to data that will be obtained by the Extreme Ultraviolet Explorer (EUVE), a satellite payload scheduled for launch in 1991. The EUVE telescopes will be operated remotely from the EUVE Science Operation Center (SOC) located at the University of California, Berkeley. The EUVE science payload consists of three scanning telescope carrying out an all-sky survey in the 80-800 A spectral region and a Deep Survey/Spectrometer telescope performing a deep survey in the 80-250 A spectral region. Guest Observers will remotely access the EUVE spectrometer database at the SOC. The EUVE database will consist of about 2 X 10 to the 10th bytes of information in a very compact form, very similar to the raw telemetry data. A history file will be built concurrently giving telescope parameters, command history, attitude summaries, engineering summaries, anomalous events, and ephemeris summaries.

  7. Extreme ultraviolet-induced photoionized plasmas

    NASA Astrophysics Data System (ADS)

    Bartnik, Andrzej; Wachulak, Przemyslaw; Fiedorowicz, Henryk; Fok, Tomasz; Jarocki, Roman; Szczurek, Miroslaw

    2014-05-01

    In this work photoionized plasmas were created by irradiation of He or Ne gases with a focused extreme ultraviolet (EUV) beam from one of two laser-plasma sources employing Nd:YAG laser systems. The first of them was a 10 Hz laser-plasma EUV source, based on a double-stream gas-puff target, irradiated with a 3 ns per 0.8 J laser pulse. EUV radiation in this case was focused using a gold-plated grazing incidence ellipsoidal collector. The second source was based on a 10 ns per 10 J per 10 Hz laser system. In this case EUV radiation was focused using a gold-plated grazing incidence multifoil collector. Gases were injected into the interaction region, perpendicularly to an optical axis of the irradiation system, using an auxiliary gas puff valve. Spectral measurements in the EUV range were performed. In all cases the most intense emission lines were assigned to singly charged ions. The other emission lines belong to atoms or doubly charged ions.

  8. Apollo-Soyuz test project Extreme Ultraviolet Telescope MA-083. [stellar spectra

    NASA Technical Reports Server (NTRS)

    Bowyer, C. S.

    1978-01-01

    Follow-on studies to the Apollo-Soyuz Extreme Ultraviolet Telescope experiment (MA-083) include analyses of individual target stars or classes of stars, not only with regard to the EUV data but also in connection with theoretical models and observations in other parts of the spectrum. Topics discussed include: observations of SS Cygni, Proxima Centauri, HZ 43, and Feige 24; computer searches for new EUV sources; Sirius: models and inferences; EUV emission from a hot gas; and the diffuse EUV background.

  9. Telescience - Concepts and contributions to the Extreme Ultraviolet Explorer mission

    NASA Technical Reports Server (NTRS)

    Marchant, Will; Dobson, Carl; Chakrabarti, Supriya; Malina, Roger F.

    1987-01-01

    It is shown how the contradictory goals of low-cost and fast data turnaround characterizing the Extreme Ultraviolet Explorer (EUVE) mission can be achieved via the early use of telescience style transparent tools and simulations. The use of transparent tools reduces the parallel development of capability while ensuring that valuable prelaunch experience is not lost in the operations phase. Efforts made to upgrade the 'EUVE electronics' simulator are described.

  10. The Extreme Ultraviolet Explorer mission - Overview and initial results

    NASA Technical Reports Server (NTRS)

    Haisch, B.; Bowyer, S.; Malina, R. F.

    1993-01-01

    The history of extreme ultraviolet (EUV) astronomy is briefly reviewed, and an overview of the Extreme Ultraviolet Explorer mission, launched into a near-earth (550 km) orbit on June 7, 1992, is presented. First, the principal objective of the mission are summarized. The instrumentation and operation of the mission are then described, with particular attention given to the sky survey instruments, the deep survey instrument, and the spectrometers. The discussion also covers the current view of the interstellar medium, early results from the mission, and future prospects for EUV astronomy.

  11. Observation of phase defect on extreme ultraviolet mask using an extreme ultraviolet microscope

    NASA Astrophysics Data System (ADS)

    Amano, Tsuyoshi; Terasawa, Tsuneo; Watanabe, Hidehiro; Toyoda, Mitsunori; Harada, Tetsuo; Watanabe, Takeo; Kinoshita, Hiroo

    2014-04-01

    Influences of phase defect structures on extreme ultraviolet (EUV) microscope images were examined. Phase defects on the bottom of a multilayer (ML) do not always propagate vertically upward to the ML's top surface. For this study, two types of masks were prepared. One was an EUV blank with programmed phase defects made of lines in order to analyze the inclination angle of the phase defects. The other was an EUV mask that consists of programmed dot type phase defects 80 nm wide and 2.4 nm high with absorber patterns of half-pitch 88-nm lines-and-spaces. The positions of the phase defects relative to the absorber lines were designed to be shifted accordingly. Transmission electron microscope observations revealed that the line type phase defects starting from the bottom surface of the ML propagated toward the ML's top surface, while inclined toward the center of the EUV blank. At the distances of 0 and 66 mm from the center of the EUV blank, the inclination angles varied from 0 to 4 deg. The impacts of the inclination angles on EUV microscope images were significant even though the positions of the phase defect relative to the absorber line, as measured by a scanning probe microscope, were the same.

  12. Extreme ultraviolet transmission of a synthetic diamond thin film

    NASA Technical Reports Server (NTRS)

    Vallerga, John V.; Gibson, J. L.; Knowles, J. L.

    1991-01-01

    Measurements are presented of a thin film of synthetic diamond at various wavelengths in the extreme ultraviolet. The synthetic diamond combines the transmission properties of carbon with the strength, density, and ruggedness of a natural diamond. The Extreme Ultraviolet Transmission (EUV) of a film of the synthetic diamond has shown the existence of a thin surface layer of silicon, probably in the form of silicon carbide, which is not a contaminant layer.

  13. The Solar Extreme Ultraviolet Monitor for MAVEN

    NASA Astrophysics Data System (ADS)

    Eparvier, F. G.; Chamberlin, P. C.; Woods, T. N.; Thiemann, E. M. B.

    2015-12-01

    The Extreme Ultraviolet (EUV) monitor is an instrument on the NASA Mars Atmosphere and Volatile EvolutioN (MAVEN) mission, designed to measure the variability of the solar soft x-rays and EUV irradiance at Mars. The solar output in this wavelength range is a primary energy input to the Mars atmosphere and a driver for the processes leading to atmospheric escape. The MAVEN EUV monitor consists of three broadband radiometers. The radiometers consist of silicon photodiodes with different bandpass-limiting filters for each channel. The filters for the radiometers are: Channel A: thin foil C/Al/Nb/C for 0.1-3 nm and 17-22 nm, Channel B: thin foil C/Al/Ti/C for 0.1-7 nm, and Channel C: interference filter for 121-122 nm. A fourth, covered photodiode is used to monitor variations in dark signal due to temperature and radiation background changes. The three science channels will monitor emissions from the highly variable corona and transition region of the solar atmosphere. The EUV monitor is mounted on the top deck of the MAVEN spacecraft and is pointed at the Sun for most of its orbit around Mars. The measurement cadence is 1-second. The broadband irradiances can be used to monitor the most rapid changes in solar irradiance due to flares. In combination with time-interpolated observations at Earth of slower varying solar spectral emissions, the broadband MAVEN EUV monitor measurements will also be used in a spectral irradiance model to generate the full EUV spectrum at Mars from 0 to 190 nm in 1-nm bins on a time cadence of 1-minute and daily averages.

  14. Extreme ultraviolet induced defects on few-layer graphene

    NASA Astrophysics Data System (ADS)

    Gao, A.; Rizo, P. J.; Zoethout, E.; Scaccabarozzi, L.; Lee, C. J.; Banine, V.; Bijkerk, F.

    2013-07-01

    We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

  15. Masks for extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y

    1998-09-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

  16. Ptychographic hyperspectral spectromicroscopy with an extreme ultraviolet high harmonic comb.

    PubMed

    Zhang, Bosheng; Gardner, Dennis F; Seaberg, Matthew H; Shanblatt, Elisabeth R; Porter, Christina L; Karl, Robert; Mancuso, Christopher A; Kapteyn, Henry C; Murnane, Margaret M; Adams, Daniel E

    2016-08-01

    We report a proof-of-principle demonstration of a new scheme of spectromicroscopy in the extreme ultraviolet (EUV) spectral range, where the spectral response of the sample at different wavelengths is imaged simultaneously. This scheme is enabled by combining ptychographic information multiplexing (PIM) with a tabletop EUV source based on high harmonic generation, where four spectrally narrow harmonics near 30 nm form a spectral comb structure. Extending PIM from previously demonstrated visible wavelengths to the EUV/X-ray wavelengths promises much higher spatial resolution and a more powerful spectral contrast mechanism, making PIM an attractive spectromicroscopy method in both microscopy and spectroscopy aspects. In addition to spectromicroscopy, this method images the multicolor EUV beam in situ, making this a powerful beam characterization technique. In contrast to other methods, the techniques described here use no hardware to separate wavelengths, leading to efficient use of the EUV radiation. PMID:27505837

  17. Ptychographic hyperspectral spectromicroscopy with an extreme ultraviolet high harmonic comb

    NASA Astrophysics Data System (ADS)

    Zhang, Bosheng; Gardner, Dennis F.; Seaberg, Matthew H.; Shanblatt, Elisabeth R.; Porter, Christina L.; Karl, Robert; Mancuso, Christopher A.; Kapteyn, Henry C.; Murnane, Margaret M.; Adams, Daniel E.

    2016-08-01

    We demonstrate a new scheme of spectromicroscopy in the extreme ultraviolet (EUV) spectral range, where the spectral response of the sample at different wavelengths is imaged simultaneously. It is enabled by applying ptychographical information multiplexing (PIM) to a tabletop EUV source based on high harmonic generation, where four spectrally narrow harmonics near 30 nm form a spectral comb structure. Extending PIM from previously demonstrated visible wavelengths to the EUV/X-ray wavelengths promises much higher spatial resolution and more powerful spectral contrast mechanism, making PIM an attractive spectromicroscopy method in both the microscopy and the spectroscopy aspects. Besides the sample, the multicolor EUV beam is also imaged in situ, making our method a powerful beam characterization technique. No hardware is used to separate or narrow down the wavelengths, leading to efficient use of the EUV radiation.

  18. Extreme ultraviolet interferometry

    SciTech Connect

    Goldberg, K A

    1997-12-01

    EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical dimension and smaller. In order to achieve diffraction-limited performance, all-reflective multilayer-coated lithographic imaging systems operating near 13-nm wavelength and 0.1 NA have system wavefront tolerances of 0.27 nm, or 0.02 waves RMS. Owing to the highly-sensitive resonant reflective properties of multilayer mirrors and extraordinarily tight tolerances set forth for their fabrication, EUV optical systems require at-wavelength EUV interferometry for final alignment and qualification. This dissertation discusses the development and successful implementation of high-accuracy EUV interferometric techniques. Proof-of-principle experiments with a prototype EUV point-diffraction interferometer for the measurement of Fresnel zoneplate lenses first demonstrated sub-wavelength EUV interferometric capability. These experiments spurred the development of the superior phase-shifting point-diffraction interferometer (PS/PDI), which has been implemented for the testing of an all-reflective lithographic-quality EUV optical system. Both systems rely on pinhole diffraction to produce spherical reference wavefronts in a common-path geometry. Extensive experiments demonstrate EUV wavefront-measuring precision beyond 0.02 waves RMS. EUV imaging experiments provide verification of the high-accuracy of the point-diffraction principle, and demonstrate the utility of the measurements in successfully predicting imaging performance. Complementary to the experimental research, several areas of theoretical investigation related to the novel PS/PDI system are presented. First-principles electromagnetic field simulations of pinhole diffraction are conducted to ascertain the upper limits of measurement accuracy and to guide selection of the pinhole diameter. Investigations of the relative merits of different PS/PDI configurations accompany a general study of the most significant sources

  19. The Extreme Ultraviolet Variability of Quasars

    NASA Astrophysics Data System (ADS)

    Punsly, Brian; Marziani, Paola; Zhang, Shaohua; Muzahid, Sowgat; O’Dea, Christopher P.

    2016-10-01

    We study the extreme ultraviolet (EUV) variability (rest frame wavelengths 500–920 Å) of high-luminosity quasars using Hubble Space Telescope (HST) (low to intermediate redshift sample) and Sloan Digital sky Survey (SDSS) (high redshift sample) archives. The combined HST and SDSS data indicates a much more pronounced variability when the sampling time between observations in the quasar rest frame is \\gt 2× {10}7 {{s}} compared to \\lt 1.5× {10}7 s. Based on an excess variance analysis, for time intervals \\lt 2× {10}7 {{s}} in the quasar rest frame, 10% of the quasars (4/40) show evidence of EUV variability. Similarly, for time intervals \\gt 2× {10}7 {{s}} in the quasar rest frame, 55% of the quasars (21/38) show evidence of EUV variability. The propensity for variability does not show any statistically significant change between 2.5× {10}7 {{s}} and 3.16× {10}7 {{s}} (1 year). The temporal behavior is one of a threshold time interval for significant variability as opposed to a gradual increase on these timescales. A threshold timescale can indicate a characteristic spatial dimension of the EUV region. We explore this concept in the context of the slim disk models of accretion. We find that for rapidly spinning black holes, the radial infall time to the plunge region of the optically thin surface layer of the slim disk that is responsible for the preponderance of the EUV flux emission (primarily within 0–7 black hole radii from the inner edge of the disk) is consistent with the empirically determined variability timescale.

  20. Studying Extreme Ultraviolet Wave Transients with a Digital Laboratory: Direct Comparison of Extreme Ultraviolet Wave Observations to Global Magnetohydrodynamic Simulations

    NASA Astrophysics Data System (ADS)

    Downs, Cooper; Roussev, Ilia I.; van der Holst, Bart; Lugaz, Noé; Sokolov, Igor V.; Gombosi, Tamas I.

    2011-02-01

    In this work, we describe our effort to explore the signatures of large-scale extreme ultraviolet (EUV) transients in the solar corona (EUV waves) using a three-dimensional thermodynamic magnetohydrodynamic model. We conduct multiple simulations of the 2008 March 25 EUV wave (~18:40 UT), observed both on and off of the solar disk by the STEREO-A and B spacecraft. By independently varying fundamental parameters thought to govern the physical mechanisms behind EUV waves in each model, such as the ambient magneto-sonic speed, eruption free energy, and eruption handedness, we are able to assess their respective contributions to the transient signature. A key feature of this work is the ability to synthesize the multi-filter response of the STEREO Extreme UltraViolet Imagers directly from model data, which gives a means for direct interpretation of EUV observations with full knowledge of the three-dimensional magnetic and thermodynamic structures in the simulations. We discuss the implications of our results with respect to some commonly held interpretations of EUV waves (e.g., fast-mode magnetosonic wave, plasma compression, reconnection front, etc.) and present a unified scenario which includes both a wave-like component moving at the fast magnetosonic speed and a coherent driven compression front related to the eruptive event itself.

  1. Coherence techniques at extreme ultraviolet wavelengths

    SciTech Connect

    Chang, Chang

    2002-10-01

    The renaissance of Extreme Ultraviolet (EUV) and soft x-ray (SXR) optics in recent years is mainly driven by the desire of printing and observing ever smaller features, as in lithography and microscopy. This attribute is complemented by the unique opportunity for element specific identification presented by the large number of atomic resonances, essentially for all materials in this range of photon energies. Together, these have driven the need for new short-wavelength radiation sources (e.g. third generation synchrotron radiation facilities), and novel optical components, that in turn permit new research in areas that have not yet been fully explored. This dissertation is directed towards advancing this new field by contributing to the characterization of spatial coherence properties of undulator radiation and, for the first time, introducing Fourier optical elements to this short-wavelength spectral region. The first experiment in this dissertation uses the Thompson-Wolf two-pinhole method to characterize the spatial coherence properties of the undulator radiation at Beamline 12 of the Advanced Light Source. High spatial coherence EUV radiation is demonstrated with appropriate spatial filtering. The effects of small vertical source size and beamline apertures are observed. The difference in the measured horizontal and vertical coherence profile evokes further theoretical studies on coherence propagation of an EUV undulator beamline. A numerical simulation based on the Huygens-Fresnel principle is performed.

  2. Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam

    NASA Astrophysics Data System (ADS)

    Oyama, Tomoko Gowa; Oshima, Akihiro; Tagawa, Seiichi

    2016-08-01

    It is a challenge to obtain sufficient extreme ultraviolet (EUV) exposure time for fundamental research on developing a new class of high sensitivity resists for extreme ultraviolet lithography (EUVL) because there are few EUV exposure tools that are very expensive. In this paper, we introduce an easy method for predicting EUV resist sensitivity by using conventional electron beam (EB) sources. If the chemical reactions induced by two ionizing sources (EB and EUV) are the same, the required absorbed energies corresponding to each required exposure dose (sensitivity) for the EB and EUV would be almost equivalent. Based on this theory, we calculated the resist sensitivities for the EUV/soft X-ray region. The estimated sensitivities were found to be comparable to the experimentally obtained sensitivities. It was concluded that EB is a very useful exposure tool that accelerates the development of new resists and sensitivity enhancement processes for 13.5 nm EUVL and 6.x nm beyond-EUVL (BEUVL).

  3. Extreme Ultraviolet Multilayer Defect Compensation in Computational Lithography.

    PubMed

    Kim, Sang-Kon

    2016-05-01

    For the extreme ultraviolet (EUV) lithography, multilayer (ML) defects such as bump and pit defects can disrupt the phase of reflected field and degrade aerial images on wafer. In this paper, a defect printability and repair simulator (DPRS) is introduced to predict and repair the effect of ML defects in EUV aerial images. DPRS is composed of multilayer growth by using Gaussian function and Stearns's method, mask simulation by using a scattering matrix (S-matrix) analysis method, and projection simulation by using Köhler's illumination. For bump and pit ML defects, the combining the modified absorber and the layer-by-layer ML peeling is better than other methods. This study can be helpful in understanding EUV defect and also give insight into the EUV defect compensation for the device volume production. PMID:27483941

  4. Normal incidence multilayer mirrors for extreme ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Stern, R. A.; Haisch, B. M.; Joki, E. G.; Catura, R. C.

    1984-01-01

    Sputtered multilayer coatings allow the use of normal incidence optics in the extreme ultraviolet (EUV) region below 500 A. Multilayer mirrors can be tailored to provide images at strong EUV lines in the sun and stars, in many cases making more efficient use of the telescope aperture than grazing incidence optics. Alternatively, the bandpass can be broadened at the expense of peak effective area, by varying the multilayer structure over the mirror surface. Such mirrors can also serve as optical elements in spectrographs for investigation of specific emission and absorption line complexes, and are self-filtering in that they reject nearby geocoronal and cosmic resonance line backgrounds. Current efforts at the Lockheed Palo Alto Research Laboratory in the design, fabrication, and testing of EUV multilayer mirrors are discussed. This program includes the design and fabrication of normal incidence EUV multilayer mirrors, and the deposition of multilayers on lacquer-coated substrates.

  5. Ion-beam-deposited boron carbide coatings for the extreme ultraviolet.

    PubMed

    Blumenstock, G M; Keski-Kuha, R A

    1994-09-01

    The normal-incidence reflectance of ion-beam-deposited boron carbide thin films has been evaluated in the extreme ultraviolet (EUV) spectral region. High-reflectance coatings have been produced with reflectances greater than 30% between 67 and 121.6 nm. This high reflectance makes ion-beam-deposited boron carbide an attractive coating for EUV applications.

  6. Kr photoionized plasma induced by intense extreme ultraviolet pulses

    NASA Astrophysics Data System (ADS)

    Bartnik, A.; Wachulak, P.; Fiedorowicz, H.; Skrzeczanowski, W.

    2016-04-01

    Irradiation of any gas with an intense EUV (extreme ultraviolet) radiation beam can result in creation of photoionized plasmas. The parameters of such plasmas can be significantly different when compared with those of the laser produced plasmas (LPP) or discharge plasmas. In this work, the photoionized plasmas were created in a krypton gas irradiated using an LPP EUV source operating at a 10 Hz repetition rate. The Kr gas was injected into the vacuum chamber synchronously with the EUV radiation pulses. The EUV beam was focused onto a Kr gas stream using an axisymmetrical ellipsoidal collector. The resulting low temperature Kr plasmas emitted electromagnetic radiation in the wide spectral range. The emission spectra were measured either in the EUV or an optical range. The EUV spectrum was dominated by emission lines originating from Kr III and Kr IV ions, and the UV/VIS spectra were composed from Kr II and Kr I lines. The spectral lines recorded in EUV, UV, and VIS ranges were used for the construction of Boltzmann plots to be used for the estimation of the electron temperature. It was shown that for the lowest Kr III and Kr IV levels, the local thermodynamic equilibrium (LTE) conditions were not fulfilled. The electron temperature was thus estimated based on Kr II and Kr I species where the partial LTE conditions could be expected.

  7. Design, fabrication, and characterization of high-efficiency extreme ultraviolet diffusers

    SciTech Connect

    Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H.; Gullikson, Eric M.

    2004-02-19

    As the development of extreme ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. The strong absorption of EUV by most materials and its extremely short wavelength, however, makes it very difficult to implement many components that are commonplace in the longer wavelength regimes. One such example is the diffuser often implemented with ordinary ground glass in the visible light regime. Here we demonstrate the fabrication of reflective EUV diffusers with high efficiency within a controllable bandwidth. Using these techniques we have fabricated diffusers with efficiencies exceeding 10% within a moderate angular single-sided bandwidth of approximately 0.06 radians.

  8. Flat field response of the microchannel plate detectors used on the Extreme Ultraviolet Explorer

    NASA Technical Reports Server (NTRS)

    Vallerga, J. V.; Gibson, J. L.; Siegmund, O. H. W.; Vedder, P. W.

    1989-01-01

    The results of the extreme ultraviolet (EUV) flat field calibrations of two of the flight detectors to be flown on the Extreme Ultraviolet Explorer Satellite (EUVE) are presented. Images of about 40 million detected events binned 512 by 512 are sufficient to show microchannel plate fixed pattern noise such as hexagonal microchannel multifiber bundle interfaces, 'dead' spots, edge distortion, and differential nonlinearity. Differences due to photocathode material and dependencies on EUV wavelength are also described. Over large spatial scales, the detector response is flat to better than 10 percent of the mean response, but, at spatial scales less than 1 mm, the variations from the mean can be as large as 20 percent.

  9. MoRu/Be multilayers for extreme ultraviolet applications

    DOEpatents

    Bajt, Sasa C.; Wall, Mark A.

    2001-01-01

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  10. Self-cleaning optic for extreme ultraviolet lithography

    DOEpatents

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  11. Characteristics of extreme ultraviolet emission from high-Z plasmas

    NASA Astrophysics Data System (ADS)

    Ohashi, H.; Higashiguchi, T.; Suzuki, Y.; Kawasaki, M.; Suzuki, C.; Tomita, K.; Nishikino, M.; Fujioka, S.; Endo, A.; Li, B.; Otsuka, T.; Dunne, P.; O'Sullivan, G.

    2016-03-01

    We demonstrate the extreme ultraviolet (EUV) and soft x-ray sources in the 2 to 7 nm spectral region related to the beyond EUV (BEUV) question at 6.x nm and the water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs), extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on high-Z plasma UTA source, coupled to multilayer mirror optics.

  12. Earth's Thermosphere under extreme solar EUV radiation environment

    NASA Astrophysics Data System (ADS)

    Tian, F.; Solomon, S. C.; Qian, L.; Roble, R. G.; Liu, H.; Kasting, J. F.

    2007-12-01

    It has been suggested that the exobase temperature of early terrestrial planetary atmosphere could have reached over 10,000 K (Kulikov et al. 2006) due to the extreme (up to 100 times that of today) solar EUV energy flux from the young Sun during the early stage of planetary evolution. Such high exobase temperature should have caused the dominant species at the exobase to escape at significant rate. Extremely fast escape of major gases in planetary atmospheres will lead to deviation from hydrostatic equilibrium. A newly developed 1-D, multi-component, hydrodynamic model has been used to investigate the response of Earth's thermosphere/ionosphere to extreme solar EUV conditions (Tian et al. 2007). We found that Earth's thermosphere/ionosphere could experience the transition from a hydrostatic equilibrium regime into a hydrodynamic regime when exposed to solar EUV fluxes exceeding certain critical level. In this regime, adiabatic cooling related to the hydrodynamic flow must be taken into the energy consideration. Due to extreme solar EUV fluxes, atomic nitrogen may have been the dominant species in upper thermosphere instead of atomic oxygen. In this work, we couple the hydrodynamic thermosphere model with an expanded GLOW model (including the electron impact ionization and excitation of nitrogen atoms) to investigate the contributions of photoelectrons and secondary electrons to thermospheric energetics under extreme conditions. The combined model provides self- consistent heating efficiency estimates for the Earth's atmosphere under extreme conditions. Implications of the simulation results to other early planetary atmospheres and their evolutions will be discussed.

  13. The intrinsic extreme ultraviolet fluxes of F5 V to M5 V stars

    SciTech Connect

    Linsky, Jeffrey L.; Fontenla, Juan; France, Kevin E-mail: jfontenla@nwra.com

    2014-01-01

    Extreme ultraviolet (EUV) radiations (10-117 nm) from host stars play important roles in the ionization, heating, and mass loss from exoplanet atmospheres. Together with the host star's Lyα and far-UV (117-170 nm) radiation, EUV radiation photodissociates important molecules, thereby changing the chemistry in exoplanet atmospheres. Since stellar EUV fluxes cannot now be measured and interstellar neutral hydrogen completely obscures stellar radiation between 40 and 91.2 nm, even for the nearest stars, we must estimate the unobservable EUV flux by indirect methods. New non-LTE semiempirical models of the solar chromosphere and corona and solar irradiance measurements show that the ratio of EUV flux in a variety of wavelength bands to the Lyα flux varies slowly with the Lyα flux and thus with the magnetic heating rate. This suggests and we confirm that solar EUV/Lyα flux ratios based on the models and observations are similar to the available 10-40 nm flux ratios observed with the Extreme Ultraviolet Explorer (EUVE) satellite and the 91.2-117 nm flux observed with the Far Ultraviolet Spectroscopic Explorer (FUSE) satellite for F5 V-M5 V stars. We provide formulae for predicting EUV flux ratios based on the EUVE and FUSE stellar data and on the solar models, which are essential input for modeling the atmospheres of exoplanets.

  14. NEW SOLAR EXTREME-ULTRAVIOLET IRRADIANCE OBSERVATIONS DURING FLARES

    SciTech Connect

    Woods, Thomas N.; Hock, Rachel; Eparvier, Frank; Jones, Andrew R.; Chamberlin, Phillip C.; Klimchuk, James A.; Didkovsky, Leonid; Judge, Darrell; Mariska, John; Warren, Harry; Schrijver, Carolus J.; Webb, David F.; Bailey, Scott; Tobiska, W. Kent

    2011-10-01

    New solar extreme-ultraviolet (EUV) irradiance observations from the NASA Solar Dynamics Observatory (SDO) EUV Variability Experiment provide full coverage in the EUV range from 0.1 to 106 nm and continuously at a cadence of 10 s for spectra at 0.1 nm resolution and even faster, 0.25 s, for six EUV bands. These observations can be decomposed into four distinct characteristics during flares. First, the emissions that dominate during the flare's impulsive phase are the transition region emissions, such as the He II 30.4 nm. Second, the hot coronal emissions above 5 MK dominate during the gradual phase and are highly correlated with the GOES X-ray. A third flare characteristic in the EUV is coronal dimming, seen best in the cool corona, such as the Fe IX 17.1 nm. As the post-flare loops reconnect and cool, many of the EUV coronal emissions peak a few minutes after the GOES X-ray peak. One interesting variation of the post-eruptive loop reconnection is that warm coronal emissions (e.g., Fe XVI 33.5 nm) sometimes exhibit a second large peak separated from the primary flare event by many minutes to hours, with EUV emission originating not from the original flare site and its immediate vicinity, but rather from a volume of higher loops. We refer to this second peak as the EUV late phase. The characterization of many flares during the SDO mission is provided, including quantification of the spectral irradiance from the EUV late phase that cannot be inferred from GOES X-ray diagnostics.

  15. Low extreme-ultraviolet luminosities impinging on protoplanetary disks

    SciTech Connect

    Pascucci, I.; Hendler, N. P.; Ricci, L.; Gorti, U.; Hollenbach, D.; Brooks, K. J.; Contreras, Y.

    2014-11-01

    The amount of high-energy stellar radiation reaching the surface of protoplanetary disks is essential to determine their chemistry and physical evolution. Here, we use millimetric and centimetric radio data to constrain the extreme-ultraviolet (EUV) luminosity impinging on 14 disks around young (∼2-10 Myr) sun-like stars. For each object we identify the long-wavelength emission in excess to the dust thermal emission, attribute that to free-free disk emission, and thereby compute an upper limit to the EUV reaching the disk. We find upper limits lower than 10{sup 42} photons s{sup –1} for all sources without jets and lower than 5 × 10{sup 40} photons s{sup –1} for the three older sources in our sample. These latter values are low for EUV-driven photoevaporation alone to clear out protoplanetary material in the timescale inferred by observations. In addition, our EUV upper limits are too low to reproduce the [Ne II] 12.81 μm luminosities from three disks with slow [Ne II]-detected winds. This indicates that the [Ne II] line in these sources primarily traces a mostly neutral wind where Ne is ionized by 1 keV X-ray photons, implying higher photoevaporative mass loss rates than those predicted by EUV-driven models alone. In summary, our results suggest that high-energy stellar photons other than EUV may dominate the dispersal of protoplanetary disks around sun-like stars.

  16. Extreme ultra-violet movie camera for imaging microsecond time scale magnetic reconnection

    SciTech Connect

    Chai, Kil-Byoung; Bellan, Paul M.

    2013-12-15

    An ultra-fast extreme ultra-violet (EUV) movie camera has been developed for imaging magnetic reconnection in the Caltech spheromak/astrophysical jet experiment. The camera consists of a broadband Mo:Si multilayer mirror, a fast decaying YAG:Ce scintillator, a visible light block, and a high-speed visible light CCD camera. The camera can capture EUV images as fast as 3.3 × 10{sup 6} frames per second with 0.5 cm spatial resolution. The spectral range is from 20 eV to 60 eV. EUV images reveal strong, transient, highly localized bursts of EUV radiation when magnetic reconnection occurs.

  17. Dynamics of laser-produced Sn microplasma for a high-brightness extreme ultraviolet light source

    SciTech Connect

    Yuspeh, S.; Tao, Y.; Burdt, R. A.; Tillack, M. S.; Ueno, Y.; Najmabadi, F.

    2011-05-16

    The effect of laser focal spot diameters of 26 and 150 {mu}m on 13.5 nm extreme ultraviolet (EUV) radiation is investigated. Simulations show that the smaller spot size has a shorter electron plasma density scale length and deeper and denser laser energy deposition region. This results in additional time required for plasma expansion and radiation transport to efficiently emit EUV light. This is experimentally observed as an increase in the delay between the EUV emission and the laser pulse. The shorter scale length plasma reabsorbs less EUV light, resulting in a higher conversion efficiency, smaller and slightly brighter light source.

  18. Evolution of laser-produced Sn extreme ultraviolet source diameter for high-brightness source

    SciTech Connect

    Roy, Amitava E-mail: aroy@barc.gov.in; Arai, Goki; Hara, Hiroyuki; Higashiguchi, Takeshi; Ohashi, Hayato; Sunahara, Atsushi; Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry; Miura, Taisuke; Mocek, Tomas; Endo, Akira

    2014-08-18

    We have investigated the effect of irradiation of solid Sn targets with laser pulses of sub-ns duration and sub-mJ energy on the diameter of the extreme ultraviolet (EUV) emitting region and source conversion efficiency. It was found that an in-band EUV source diameter as low as 18 μm was produced due to the short scale length of a plasma produced by a sub-ns laser. Most of the EUV emission occurs in a narrow region with a plasma density close to the critical density value. Such EUV sources are suitable for high brightness and high repetition rate metrology applications.

  19. Understanding the Early Evolution of M dwarf Extreme Ultraviolet Radiation

    NASA Astrophysics Data System (ADS)

    Peacock, Sarah; Barman, Travis; Shkolnik, Evgenya

    2015-11-01

    The chemistry and evolution of planetary atmospheres depends on the evolution of high-energy radiation emitted by its host star. High levels of extreme ultraviolet (EUV) radiation can drastically alter the atmospheres of terrestrial planets through ionizing, heating, expanding, chemically modifying and eroding them during the first few billion years of a planetary lifetime. While there is evidence that stars emit their highest levels of far and near ultraviolet (FUV; NUV) radiation in the earliest stages of their evolution, we are currently unable to directly measure the EUV radiation. Most previous stellar atmosphere models under-predict FUV and EUV emission from M dwarfs; here we present new models for M stars that include prescriptions for the hot, lowest density atmospheric layers (chromosphere, transition region and corona), from which this radiation is emitted. By comparing our model spectra to GALEX near and far ultraviolet fluxes, we are able to predict the evolution of EUV radiation for M dwarfs from 10 Myr to a few Gyr. This research is the next major step in the HAZMAT (HAbitable Zones and M dwarf Activity across Time) project to analyze how the habitable zone evolves with the evolving properties of stellar and planetary atmospheres.

  20. Extreme ultraviolet high-harmonic spectroscopy of solids.

    PubMed

    Luu, T T; Garg, M; Kruchinin, S Yu; Moulet, A; Hassan, M Th; Goulielmakis, E

    2015-05-28

    Extreme ultraviolet (EUV) high-harmonic radiation emerging from laser-driven atoms, molecules or plasmas underlies powerful attosecond spectroscopy techniques and provides insight into fundamental structural and dynamic properties of matter. The advancement of these spectroscopy techniques to study strong-field electron dynamics in condensed matter calls for the generation and manipulation of EUV radiation in bulk solids, but this capability has remained beyond the reach of optical sciences. Recent experiments and theoretical predictions paved the way to strong-field physics in solids by demonstrating the generation and optical control of deep ultraviolet radiation in bulk semiconductors, driven by femtosecond mid-infrared fields or the coherent up-conversion of terahertz fields to multi-octave spectra in the mid-infrared and optical frequencies. Here we demonstrate that thin films of SiO2 exposed to intense, few-cycle to sub-cycle pulses give rise to wideband coherent EUV radiation extending in energy to about 40 electronvolts. Our study indicates the association of the emitted EUV radiation with intraband currents of multi-petahertz frequency, induced in the lowest conduction band of SiO2. To demonstrate the applicability of high-harmonic spectroscopy to solids, we exploit the EUV spectra to gain access to fine details of the energy dispersion profile of the conduction band that are as yet inaccessible by photoemission spectroscopy in wide-bandgap dielectrics. In addition, we use the EUV spectra to trace the attosecond control of the intraband electron motion induced by synthesized optical transients. Our work advances lightwave electronics in condensed matter into the realm of multi-petahertz frequencies and their attosecond control, and marks the advent of solid-state EUV photonics.

  1. Extreme ultraviolet high-harmonic spectroscopy of solids.

    PubMed

    Luu, T T; Garg, M; Kruchinin, S Yu; Moulet, A; Hassan, M Th; Goulielmakis, E

    2015-05-28

    Extreme ultraviolet (EUV) high-harmonic radiation emerging from laser-driven atoms, molecules or plasmas underlies powerful attosecond spectroscopy techniques and provides insight into fundamental structural and dynamic properties of matter. The advancement of these spectroscopy techniques to study strong-field electron dynamics in condensed matter calls for the generation and manipulation of EUV radiation in bulk solids, but this capability has remained beyond the reach of optical sciences. Recent experiments and theoretical predictions paved the way to strong-field physics in solids by demonstrating the generation and optical control of deep ultraviolet radiation in bulk semiconductors, driven by femtosecond mid-infrared fields or the coherent up-conversion of terahertz fields to multi-octave spectra in the mid-infrared and optical frequencies. Here we demonstrate that thin films of SiO2 exposed to intense, few-cycle to sub-cycle pulses give rise to wideband coherent EUV radiation extending in energy to about 40 electronvolts. Our study indicates the association of the emitted EUV radiation with intraband currents of multi-petahertz frequency, induced in the lowest conduction band of SiO2. To demonstrate the applicability of high-harmonic spectroscopy to solids, we exploit the EUV spectra to gain access to fine details of the energy dispersion profile of the conduction band that are as yet inaccessible by photoemission spectroscopy in wide-bandgap dielectrics. In addition, we use the EUV spectra to trace the attosecond control of the intraband electron motion induced by synthesized optical transients. Our work advances lightwave electronics in condensed matter into the realm of multi-petahertz frequencies and their attosecond control, and marks the advent of solid-state EUV photonics. PMID:26017451

  2. THE EXTREME-ULTRAVIOLET EMISSION FROM SUN-GRAZING COMETS

    SciTech Connect

    Bryans, P.; Pesnell, W. D.

    2012-11-20

    The Atmospheric Imaging Assembly (AIA) on the Solar Dynamics Observatory has observed two Sun-grazing comets as they passed through the solar atmosphere. Both passages resulted in a measurable enhancement of extreme-ultraviolet (EUV) radiance in several of the AIA bandpasses. We explain this EUV emission by considering the evolution of the cometary atmosphere as it interacts with the ambient solar atmosphere. Molecules in the comet rapidly sublimate as it approaches the Sun. They are then photodissociated by the solar radiation field to create atomic species. Subsequent ionization of these atoms produces a higher abundance of ions than normally present in the corona and results in EUV emission in the wavelength ranges of the AIA telescope passbands.

  3. Extreme ultraviolet induced defects on few-layer graphene

    SciTech Connect

    Gao, A.; Zoethout, E.; Lee, C. J.; Rizo, P. J.; Scaccabarozzi, L.; Banine, V.; Bijkerk, F.

    2013-07-28

    We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

  4. Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide.

    PubMed

    Sistrunk, Emily; Grilj, Jakob; Jeong, Jaewoo; Samant, Mahesh G; Gray, Alexander X; Dürr, Hermann A; Parkin, Stuart S P; Gühr, Markus

    2015-02-23

    Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO(2) film with EUV diffraction from the optically excited sample. The VO(2) exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features. PMID:25836470

  5. The Extreme-ultraviolet Emission from Sun-grazing Comets

    NASA Technical Reports Server (NTRS)

    Bryans, Paul; Pesnell, William D.

    2012-01-01

    The Atmospheric Imaging Assembly (AIA) on the Solar Dynamics Observatory has observed two Sun-grazing comets as they passed through the solar atmosphere. Both passages resulted in a measurable enhancement of extreme-ultraviolet (EUV) radiance in several of the AIA bandpasses.We explain this EUV emission by considering the evolution of the cometary atmosphere as it interacts with the ambient solar atmosphere. Molecules in the comet rapidly sublimate as it approaches the Sun. They are then photodissociated by the solar radiation field to create atomic species. Subsequent ionization of these atoms produces a higher abundance of ions than normally present in the corona and results in EUV emission in the wavelength ranges of the AIA telescope passbands.

  6. Compact extreme ultraviolet source for laboratory-based photoemission spectromicroscopy

    NASA Astrophysics Data System (ADS)

    Schmitz, Christoph; Wilson, Daniel; Rudolf, Denis; Wiemann, Carsten; Plucinski, Lukasz; Riess, Sally; Schuck, Martin; Hardtdegen, Hilde; Schneider, Claus M.; Tautz, F. Stefan; Juschkin, Larissa

    2016-06-01

    We report on the combination of a state-of-the-art energy-filtering photoemission electron microscope with an intense yet compact laboratory-based gas discharge extreme ultraviolet (EUV) light source. Using a photon energy of 71.7 eV from oxygen plasma (O5+ spectral line), we demonstrate element-selective photoelectron imaging in real space and band structure mapping in reciprocal space. Additionally, the high surface sensitivity of the EUV light was used to study the surface oxidation on islands of the phase-change material Ge1Sb2Te4 . The EUV light source allows the extension of spectromicroscopy, previously only feasible at synchrotron beamlines, to laboratory-based work.

  7. Spectral purification and infrared light recycling in extreme ultraviolet lithography sources.

    PubMed

    Bayraktar, Muharrem; van Goor, Fred A; Boller, Klaus J; Bijkerk, Fred

    2014-04-01

    We present the design of a novel collector mirror for laser produced plasma (LPP) light sources to be used in extreme ultraviolet (EUV) lithography. The design prevents undesired infrared (IR) drive laser light, reflected from the plasma, from reaching the exit of the light source. This results in a strong purification of the EUV light, while the reflected IR light becomes refocused into the plasma for enhancing the IR-to-EUV conversion. The dual advantage of EUV purification and conversion enhancement is achieved by incorporating an IR Fresnel zone plate pattern into the EUV reflective multilayer coating of the collector mirror. Calculations using Fresnel-Kirchhoff's diffraction theory for a typical collector design show that the IR light at the EUV exit is suppressed by four orders of magnitude. Simultaneously, 37% of the reflected IR light is refocused back the plasma. PMID:24718234

  8. Extreme Ultraviolet Phase Contrast Imaging

    SciTech Connect

    Denbeaux, Gregory; Garg, Rashi; Aquila, Andy; Barty, Anton; Goldberg, Kenneth; Gullikson, Eric; Liu, Yanwei; Wood, Obert

    2005-11-01

    The conclusions of this report are: (1) zone plate microscopy provides high resolution imaging of EUV masks; (2) using phase plates in the back focal plane of the objective lens can provide contrast mechanisms for measurement of the phase shift from defects on the mask; (3) the first high resolution EUV Zernike phase contrast images have been acquired; and (4) future work will include phase contrast mode in reflection from an EUV mask to directly measure the reflectivity and phase shift from defects.

  9. Extreme ultraviolet lithography: A few more pieces of the puzzle

    SciTech Connect

    Anderson, Christopher N.

    2009-05-20

    The work described in this dissertation has improved three essential components of extreme ultraviolet (EUV) lithography: exposure tools, photoresist, and metrology. Exposure tools. A field-averaging illumination stage is presented that enables nonuniform, high-coherence sources to be used in applications where highly uniform illumination is required. In an EUV implementation, it is shown that the illuminator achieves a 6.5% peak-to-valley intensity variation across the entire design field of view. In addition, a design for a stand-alone EUV printing tool capable of delivering 15 nm half-pitch sinusoidal fringes with available sources, gratings and nano-positioning stages is presented. It is shown that the proposed design delivers a near zero line-edge-rougness (LER) aerial image, something extremely attractive for the application of resist testing. Photoresist. Two new methods of quantifying the deprotection blur of EUV photoresists are described and experimentally demonstrated. The deprotection blur, LER, and sensitivity parameters of several EUV photoresists are quantified simultaneously as base weight percent, photoacid generator (PAG) weight percent, and post-exposure bake (PEB) temperature are varied. Two surprising results are found: (1) changing base weight percent does not significantly affect the deprotection blur of EUV photoresist, and (2) increasing PAG weight percent can simultaneously reduce LER and E-size in EUV photoresist. The latter result motivates the development of an EUV exposure statistics model that includes the effects of photon shot noise, the PAG spatial distribution, and the changing of the PAG distribution during the exposure. In addition, a shot noise + deprotection blur model is used to show that as deprotection blur becomes large relative to the size of the printed feature, LER reduction from improved counting statistics becomes dominated by an increase in LER due to reduced deprotection contrast. Metrology. Finally, this

  10. Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography

    SciTech Connect

    Wedowski, M.; Gullikson, E.M.; Underwood, J.H.; Spiller, E.A.; Montcalm, C.; Kearney, P.A.; Bajt, S.; Schmidt, M.A.; Folta, J.A.

    1999-11-01

    The synchrotron-based reflectometer at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley is an important metrology tool within the current Extreme Ultraviolet Lithography (EUVL) program. This program is a joint activity of three National Laboratories and a consortium of leading semiconductor manufacturers. Its goal is the development of a technology for routine production of sub-100 nm feature sizes for microelectronic circuits. Multilayer-coated normal-incidence optical surfaces reflecting in the Extreme Ultraviolet (EUV) spectral range near 13 nm are the basis for this emerging technology. All optical components of EUV lithographic steppers need to be characterized at-wavelength during their development and manufacturing process. Multilayer coating uniformity and gradient, accurate wavelength matching and high peak reflectances are the main parameters to be optimized. The mechanical and optical properties of the reflectometer at ALS beamline 6.3.2 proved to be well suited for the needs of the current EUVL program. In particular the facility is highly precise in its wavelength calibration and the determination of absolute EUV reflectance. The reproducibility of results of measurements at ALS beamline 6.3.2 is 0.2 % for reflectivity and 0.002 nm for wavelength.

  11. Reconstruction of Solar Extreme Ultraviolet Flux 1740 - 2015

    NASA Astrophysics Data System (ADS)

    Svalgaard, Leif

    2016-08-01

    Solar extreme ultraviolet (EUV) radiation creates the conducting E-layer of the ionosphere, mainly by photo-ionization of molecular oxygen. Solar heating of the ionosphere creates thermal winds, which by dynamo action induce an electric field driving an electric current having a magnetic effect observable on the ground, as was discovered by G. Graham in 1722. The current rises and falls with the Sun, and thus causes a readily observable diurnal variation of the geomagnetic field, allowing us to deduce the conductivity and thus the EUV flux as far back as reliable magnetic data reach. High-quality data go back to the "Magnetic Crusade" of the 1830s and less reliable, but still usable, data are available for portions of the 100 years before that. J.R. Wolf and, independently, J.-A. Gautier discovered the dependence of the diurnal variation on solar activity, and today we understand and can invert that relationship to construct a reliable record of the EUV flux from the geomagnetic record. We compare that to the F_{10.7} flux and the sunspot number, and we find that the reconstructed EUV flux reproduces the F_{10.7} flux with great accuracy. On the other hand, it appears that the Relative Sunspot Number as currently defined is beginning to no longer be a faithful representation of solar magnetic activity, at least as measured by the EUV and related indices. The reconstruction suggests that the EUV flux reaches the same low (but non-zero) value at every sunspot minimum (possibly including Grand Minima), representing an invariant "solar magnetic ground state".

  12. Ablation and transmission of thin solid targets irradiated by intense extreme ultraviolet laser radiation

    NASA Astrophysics Data System (ADS)

    Aslanyan, V.; Kuznetsov, I.; Bravo, H.; Woolston, M. R.; Rossall, A. K.; Menoni, C. S.; Rocca, J. J.; Tallents, G. J.

    2016-09-01

    The interaction of an extreme ultraviolet (EUV) laser beam with a parylene foil was studied by experiments and simulation. A single EUV laser pulse of nanosecond duration focused to an intensity of 3 × 1010 W cm-2 perforated micrometer thick targets. The same laser pulse was simultaneously used to diagnose the interaction by a transmission measurement. A combination of 2-dimensional radiation-hydrodynamic and diffraction calculations was used to model the ablation, leading to good agreement with experiment. This theoretical approach allows predictive modelling of the interaction with matter of intense EUV beams over a broad range of parameters.

  13. Multilayer mirror with enhanced spectral selectivity for the next generation extreme ultraviolet lithography

    SciTech Connect

    Medvedev, V. V. Kruijs, R. W. E. van de; Yakshin, A. E.; Novikova, N. N.; Krivtsun, V. M.; Louis, E.; Bijkerk, F.; Yakunin, A. M.

    2013-11-25

    We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that provides selective suppression for infrared (IR) radiation. The mirror consists of an IR-transparent LaN∕B multilayer stack which is used as EUV-reflective coating and antireflective (AR) coating to suppress IR. The AR coating can be optimized to suppress CO{sub 2} laser radiation at the wavelength of 10.6 μm, which is of interest for application in next-generation EUV lithography systems.

  14. Employing partially coherent, compact gas-discharge sources for coherent diffractive imaging with extreme ultraviolet light

    NASA Astrophysics Data System (ADS)

    Bußmann, J.; Odstrčil, M.; Bresenitz, R.; Rudolf, D.; Miao, Jianwei; Brocklesby, W. S.; Grützmacher, D.; Juschkin, L.

    2015-09-01

    Coherent diffractive imaging (CDI) and related techniques enable a new type of diffraction-limited high-resolution extreme ultraviolet (EUV) microscopy. Here, we demonstrate CDI reconstruction of a complex valued object under illumination by a compact gas-discharge EUV light source emitting at 17.3 nm (O VI spectral line). The image reconstruction method accounts for the partial spatial coherence of the radiation and allows imaging even with residual background light. These results are a first step towards laboratory-scale CDI with a gas-discharge light source for applications including mask inspection for EUV lithography, metrology and astronomy.

  15. Extreme ultraviolet source at 6.7 nm based on a low-density plasma

    SciTech Connect

    Higashiguchi, Takeshi; Yugami, Noboru; Otsuka, Takamitsu; Jiang, Weihua; Endo, Akira; Li Bowen; Kilbane, Deirdre; Dunne, Padraig; O'Sullivan, Gerry

    2011-11-07

    We demonstrate an efficient extreme ultraviolet (EUV) source for operation at {lambda} = 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2% BW), which is 1.6 times larger than the 0.33% (0.6% BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.

  16. Exploring the temporally resolved electron density evolution in extreme ultra-violet induced plasmas

    NASA Astrophysics Data System (ADS)

    van der Horst, R. M.; Beckers, J.; Nijdam, S.; Kroesen, G. M. W.

    2014-07-01

    We measured the electron density in an extreme ultra-violet (EUV) induced plasma. This is achieved in a low-pressure argon plasma by using a method called microwave cavity resonance spectroscopy. The measured electron density just after the EUV pulse is 2.6 × 1016 m-3. This is in good agreement with a theoretical prediction from photo-ionization, which yields a density of 4.5 × 1016 m-3. After the EUV pulse the density slightly increases due to electron impact ionization. The plasma (i.e. electron density) decays in tens of microseconds.

  17. Extreme ultraviolet spectroscopy diagnostics of low-temperature plasmas based on a sliced multilayer grating and glass capillary optics

    SciTech Connect

    Kantsyrev, V. L.; Safronova, A. S.; Williamson, K. M.; Wilcox, P.; Ouart, N. D.; Yilmaz, M. F.; Struve, K. W.; Voronov, D. L.; Feshchenko, R. M.; Artyukov, I. A.; Vinogradov, A. V.

    2008-10-15

    New extreme ultraviolet (EUV) spectroscopic diagnostics of relatively low-temperature plasmas based on the application of an EUV spectrometer and fast EUV diodes combined with glass capillary optics is described. An advanced high resolution dispersive element sliced multilayer grating was used in the compact EUV spectrometer. For monitoring of the time history of radiation, filtered fast EUV diodes were used in the same spectral region (>13 nm) as the EUV spectrometer. The radiation from the plasma was captured by using a single inexpensive glass capillary that was transported onto the spectrometer entrance slit and EUV diode. The use of glass capillary optics allowed placement of the spectrometer and diodes behind the thick radiation shield outside the direction of a possible hard x-ray radiation beam and debris from the plasma source. The results of the testing and application of this diagnostic for a compact laser plasma source are presented. Examples of modeling with parameters of plasmas are discussed.

  18. Interferometric broadband Fourier spectroscopy with a partially coherent gas-discharge extreme ultraviolet light source.

    PubMed

    Rudolf, Denis; Bußmann, Jan; Odstrčil, Michal; Dong, Minjie; Bergmann, Klaus; Danylyuk, Serhiy; Juschkin, Larissa

    2015-06-15

    Extreme ultraviolet (EUV) spectroscopy is a powerful tool for studying fundamental processes in plasmas as well as for spectral characterization of EUV light sources and EUV optics. However, a simultaneous measurement covering a broadband spectral range is difficult to realize. Here, we propose a method for interferometric broadband Fourier spectroscopy connecting soft x ray and visible spectral ranges with moderate spectral resolution. We present an analytical model to recover the spectrum from a double-slit interferogram. We apply our model for spectral characterization of a partially coherent gas-discharge EUV light source operated with different gases in the spectral range between 10 and 110 nm wavelengths. Our approach allows a simple and fast broadband spectroscopy with fully or partially spatially coherent light sources, for instance, to characterize out-of-band radiation in EUV lithography applications. PMID:26076270

  19. Throughput compensation through optical proximity correction for realization of an extreme ultraviolet pellicle

    NASA Astrophysics Data System (ADS)

    Ko, Ki-Ho; Mo, Soo-Yeon; Kim, In-Seon; Oh, Hye-Keun

    2016-04-01

    The absorption of extreme ultraviolet (EUV) light by the mask-protecting pellicle could be the most critical problem preventing widespread EUV adoption because EUV source power is still too limited to facilitate its use in mass production. We found that transmission loss due to the EUV pellicle could be compensated through the use of proper optical proximity correction (OPC) applied to the mask-pellicle system. Patterning results of optical proximity correction corrected masks with different transmission pellicles are shown for various one-dimensional and two-dimensional patterns. From the results, it is clearly shown that we do not need to increase the dose to avoid the throughput loss, even when using a pellicle with 80% one-pass transmission. The OPC process described in this paper can speed EUV adoption by allowing the use of much thicker films with higher absorption.

  20. AN EXTREME-ULTRAVIOLET WAVE ASSOCIATED WITH A SURGE

    SciTech Connect

    Zheng, Ruisheng; Jiang, Yunchun; Yang, Jiayan; Bi, Yi; Hong, Junchao; Yang, Bo; Yang, Dan

    2013-02-10

    Taking advantage of the high temporal and spatial resolution observations from the Solar Dynamics Observatory, we present an extreme-ultraviolet (EUV) wave associated with a surge on 2010 November 13. Due to the magnetic flux cancelation, some surges formed in the source active region (AR). The strongest surge produced our studied event. The surge was deflected by the nearby loops that connected to another AR, and disrupted the overlying loops that slowly expanded and eventually evolved into a weak coronal mass ejection (CME). The surge was likely associated with the core of the CME. The EUV wave happened after the surge deflected. The wave departed far from the flare center and showed a close location relative to the deflected surge. The wave propagated in a narrow angular extent, mainly in the ejection direction of the surge. The close timing and location relations between the EUV wave and the surge indicate that the wave was closely associated with the CME. The wave had a velocity of 310-350 km s{sup -1}, while the speeds of the surge and the expanding loops were about 130 and 150 km s{sup -1}, respectively. All of the results suggest that the EUV wave was a fast-mode wave and was most likely triggered by the weak CME.

  1. An Extreme-ultraviolet Wave Associated with a Surge

    NASA Astrophysics Data System (ADS)

    Zheng, Ruisheng; Jiang, Yunchun; Yang, Jiayan; Bi, Yi; Hong, Junchao; Yang, Bo; Yang, Dan

    2013-02-01

    Taking advantage of the high temporal and spatial resolution observations from the Solar Dynamics Observatory, we present an extreme-ultraviolet (EUV) wave associated with a surge on 2010 November 13. Due to the magnetic flux cancelation, some surges formed in the source active region (AR). The strongest surge produced our studied event. The surge was deflected by the nearby loops that connected to another AR, and disrupted the overlying loops that slowly expanded and eventually evolved into a weak coronal mass ejection (CME). The surge was likely associated with the core of the CME. The EUV wave happened after the surge deflected. The wave departed far from the flare center and showed a close location relative to the deflected surge. The wave propagated in a narrow angular extent, mainly in the ejection direction of the surge. The close timing and location relations between the EUV wave and the surge indicate that the wave was closely associated with the CME. The wave had a velocity of 310-350 km s-1, while the speeds of the surge and the expanding loops were about 130 and 150 km s-1, respectively. All of the results suggest that the EUV wave was a fast-mode wave and was most likely triggered by the weak CME.

  2. Changes of solar extreme ultraviolet spectrum in solar cycle 24

    NASA Astrophysics Data System (ADS)

    Huang, Jianping; Hao, Yongqiang; Zhang, Donghe; Xiao, Zuo

    2016-07-01

    Following the extreme solar minimum during 2008-2009, solar activity keeps low in solar cycle 24 (SC24) and is making SC24 the weakest one of recent cycles. In this paper, using observations from Earth-orbiting satellites, we compare the solar extreme ultraviolet (EUV) irradiance between SC23 and SC24 and investigate the solar cycle change of linear dependence of EUV on the P ((F10.7 + F10.7A)/2) and Mg II core-to-wing ratio indices. The Bremen composite Mg II index is strongly correlated with P over the two solar cycles, while this is not the case for the Laboratory for Atmospheric and Space Physics (LASP) composite Mg II index, so we focus on the different dependence of EUV on the P and LASP Mg II indices. As a result we find that three coronal emissions (Fe XV at 28.4 nm and 41.7 nm and Fe XVI at 33.5 nm) brighten in SC24 relative to P; i.e., the magnitude of irradiance is higher than in SC23 at the same level of P. But relative to the LASP Mg II index, these emissions show no appreciable solar cycle differences. By contrast, the H I Lyman α at 121.6 nm dims in SC24 relative to the LASP Mg II but shows identical dependence on P in the two solar cycles. This result seems to contradict a well-accepted fact that chromospheric and transition region emissions are better represented by the Mg II index and coronal lines by F10.7. For the different solar cycle variability of EUV in SC24, whether it is caused by source changes on the Sun is still unclear, but we suggest that it needs to be considered in proxy modeling of the EUV irradiance and aeronomic studies.

  3. Results from the calibration of the Extreme Ultraviolet Explorer instruments

    NASA Technical Reports Server (NTRS)

    Welsh, Barry Y.; Jelinsky, Pat; Vedder, Peter W.; Vallerga, John V.; Finley, David S.; Malina, Roger F.

    1991-01-01

    The paper describes the main features and selected results of the calibration of the scientific instruments to be flown on the Extreme Ultraviolet Explorer in 1991. The instrument payload includes three grazing incidence scanning telescopes and an EUV spectrometer/deep survey instrument covering the spectral region 70-800 A. The measured imaging characteristics, the effective areas, and the details of spectral responses of the instruments are presented. Diagrams of the cross-sectional views of the scanning telescope and the deep-survey/spectrometer telescope are included.

  4. Extreme ultraviolet reflectivity studies of gold on glass and metal substrates

    NASA Technical Reports Server (NTRS)

    Jelinsky, Sharon R.; Malina, Roger F.; Jelinsky, Patrick

    1988-01-01

    The paper reports measurements of the extreme ultraviolet reflectivity of gold from 44 to 920 A at grazing incidence. Gold was deposited using vacuum evaporation and electroplating on substrates of glass and polished nickel, respectively. Measurements are also presented of the extreme ultraviolet reflectivity of electroless nickel in the same wavelength region, where one of the polished nickel substrates was used as a sample. Derived optical constants for evaporated and electroplated gold and electroless nickel are presented. Additional studies of the effects of various contaminants on the EUV reflectivity are also reported. The variations of the optical constants are discussed in terms of density variations, surface roughness and contamination effects. These results ae reported as part of studies for the Extreme Ultraviolet Explorer satellite program to determine acceptance criteria for the EUV optics, contamination budgets and calibration plans.

  5. Extreme ultraviolet spectroscopy of PKS 2155-304.

    PubMed

    Fruscione, A; Bowyer, S; Konigl, A; Kahn, S M

    1994-02-20

    We present the extreme ultraviolet (75-110 angstroms) spectrum of the BL Lac object PKS 2155-304, the first spectrum of an extragalactic source obtained with the Extreme Ultraviolet Explorer. The spectrum shows a generally smooth continuum, which can be modeled by a single power law plus interstellar absorption, and possibly an absorption feature at approximately 80 angstroms. The best fit to the data suggests that the EUV spectrum can be interpreted as a simple extrapolation of the X-ray continuum, with an energy index alpha approximately 1.6; however, shallower or steeper power laws with indices between -0.4 and 2.7 cannot be ruled out by the existing EUV data alone. The data provide strong constraints on the interstellar neutral H and He along the line of sight. Using a column density of 1.36 x 10(20) cm-2 for the Galactic neutral hydrogen along the PKS 2155-304 line of sight, the neutral helium column density is constrained to be 9%-10% of the hydrogen amount.

  6. Research in extreme ultraviolet and far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Labov, S. E.

    1985-01-01

    Instruments designed to explore different aspects of far and extreme ultraviolet cosmic radiation were studied. The far ultraviolet imager (FUVI) was flown on the Aries sounding rocket. Its unique large format 75mm detector mapped out the far ultraviolet background radiation with a resolution of only a few arc minutes. Analysis of this data indicates to what extent the FUVI background is extra galactic in origin. A power spectrum of the spatial fluctuations will have direct consequences for galactic evolution.

  7. An operations and command systems for the extreme ultraviolet explorer

    NASA Technical Reports Server (NTRS)

    Muscettola, Nicola; Korsmeyer, David J.; Olson, Eric C.; Wong, Gary

    1994-01-01

    About 40% of the budget of a scientific spacecraft mission is usually consumed by Mission Operations & Data Analysis (MO&DA) with MO driving these costs. In the current practice, MO is separated from spacecraft design and comes in focus relatively late in the mission life cycle. As a result, spacecraft may be designed that are very difficult to operate. NASA centers have extensive MO expertise but often lessons learned in one mission are not exploited for other parallel or future missions. A significant reduction of MO costs is essential to ensure a continuing and growing access to space for the scientific community. We are addressing some of these issues with a highly automated payload operations and command system for an existing mission, the Extreme Ultraviolet Explorer (EUVE). EUVE is currently operated jointly by the Goddard Space Flight Center (GSFC), responsible for spacecraft operations, and the Center for Extreme Ultraviolet Astrophysics (CEA) of the University of California, Berkeley, which controls the telescopes and scientific instruments aboard the satellite. The new automated system is being developed by a team including personnel from the NASA Ames Research Center (ARC), the Jet Propulsion Laboratory (JPL) and the Center for EUV Astrophysics (CEA). An important goal of the project is to provide AI-based technology that can be easily operated by nonspecialists in AI. Another important goal is the reusability of the techniques for other missions. Models of the EUVE spacecraft need to be built both for planning/scheduling and for monitoring. In both cases, our modeling tools allow the assembly of a spacecraft model from separate sub-models of the various spacecraft subsystems. These sub-models are reusable; therefore, building mission operations systems for another small satellite mission will require choosing pre-existing modules, reparametrizing them with respect to the actual satellite telemetry information, and reassembling them in a new model. We

  8. Colliding laser-produced plasmas as targets for laser-generated extreme ultraviolet sources

    SciTech Connect

    Cummins, T.; O'Gorman, C.; Dunne, P.; Sokell, E.; O'Sullivan, G.; Hayden, P.

    2014-07-28

    Colliding plasmas produced by neodymium-doped yttrium aluminium garnet (Nd:YAG) laser illumination of tin wedge targets form stagnation layers, the physical parameters of which can be controlled to optimise coupling with a carbon dioxide (CO{sub 2}) heating laser pulse and subsequent extreme ultraviolet (EUV) production. The conversion efficiency (CE) of total laser energy into EUV emission at 13.5 nm ± 1% was 3.6%. Neglecting both the energy required to form the stagnation layer and the EUV light produced before the CO{sub 2} laser pulse is incident results in a CE of 5.1% of the CO{sub 2} laser energy into EUV light.

  9. Wide-field broadband extreme ultraviolet transmission ptychography using a high-harmonic source.

    PubMed

    Baksh, Peter D; Odstrčil, Michal; Kim, Hyun-Su; Boden, Stuart A; Frey, Jeremy G; Brocklesby, William S

    2016-04-01

    High-harmonic generation (HHG) provides a laboratory-scale source of coherent radiation ideally suited to lensless coherent diffractive imaging (CDI) in the EUV and x-ray spectral region. Here we demonstrate transmission extreme ultraviolet (EUV) ptychography, a scanning variant of CDI, using radiation at a wavelength around 29 nm from an HHG source. Image resolution is diffraction-limited at 54 nm and fields of view up to ∼100  μm are demonstrated. These results demonstrate the potential for wide-field, high-resolution, laboratory-scale EUV imaging using HHG-based sources with potential application in biological imaging or EUV lithography pellicle inspection. PMID:27192225

  10. Extreme Ultra-Violet Spectroscopy of the Lower Solar Atmosphere During Solar Flares (Invited Review)

    NASA Astrophysics Data System (ADS)

    Milligan, Ryan O.

    2015-12-01

    The extreme ultra-violet (EUV) portion of the solar spectrum contains a wealth of diagnostic tools for probing the lower solar atmosphere in response to an injection of energy, particularly during the impulsive phase of solar flares. These include temperature- and density-sensitive line ratios, Doppler-shifted emission lines, nonthermal broadening, abundance measurements, differential emission measure profiles, continuum temperatures and energetics, among others. In this article I review some of the recent advances that have been made using these techniques to infer physical properties of heated plasma at footpoint and ribbon locations during the initial stages of solar flares. I primarily focus on studies that have utilised spectroscopic EUV data from Hinode/EUV Imaging Spectrometer (EIS) and Solar Dynamics Observatory/EUV Variability Experiment (SDO/EVE), and I also provide some historical background and a summary of future spectroscopic instrumentation.

  11. EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

    NASA Astrophysics Data System (ADS)

    Attwood, David

    2004-12-01

    The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical

  12. Extreme- and far-ultraviolet environment at shuttle altitudes

    SciTech Connect

    Chakrabarti, S.

    1987-01-01

    The astronomical data obtained by the Far Ultraviolet Space Telescope (FAUST) and the Very Wide Field Camera (VWFC) on board the Spacelab I mission have triggered questions on the natural and induced Extreme and Far Ultraviolet (EUV and FUV) environment of the space shuttle. Moreover, the recent discovery of approx. lk Rayleighs N/sub 2/ Lyman Birge Hopfield (LBH) nightglow emissions by the U.S. Air Force's S3-4 satellite, and subsequent confirmation by the Imaging Spectrometric Observatory (ISO) experiment on the Spacelab I mission have serious implications for the astronomical observations from the shuttle. Since both ISO and S3-4 experiments were conducted from shuttle altitudes, the implied EUV and FUV environment for astronomical observations can be severe. In order to address the question of the suitability of the shuttle as an astronomical platform, data from FAUST and other experiments were examined. It is concluded that the FAUST background is most likely due to the observation of tropical UV arcs, a natural airglow phenomenon. Strategies for future shuttle experiments to overcome this and other natural emissions are discussed.

  13. Toward defect-free fabrication of extreme ultraviolet photomasks

    NASA Astrophysics Data System (ADS)

    Qi, Zhengqing John; Rankin, Jed H.; Lawliss, Mark; Badger, Karen D.; Turley, Christina

    2016-04-01

    Defect-free fabrication of extreme ultraviolet (EUV) masks relies on the appropriate detection of native defects and subsequent strategies for their elimination. Commercial unavailability of actinic mask-blank inspection systems motivates the identification of an optical inspection methodology most suitable for finding relevant EUV blank defects. Studies showed that 193-nm wavelength inspection found the greatest number of printable defects as compared with rival higher-wavelength systems, establishing deep ultraviolet inspections as the blank defectivity baseline for subsequent mitigation strategies. Next, defect avoidance via pattern shifting was explored using representative 7-nm node metal/contact layer designs and 193-nm mask-blank inspection results. It was found that a significant percentage of native defects could be avoided only when the design was limited to active patterns (i.e., layouts without dummy fill). Total pattern-defect overlap remained ≤5 when metal layer blanks were chosen from the top 35% least defective substrates, while the majority of blanks remained suitable for contacts layers due to a lower active pattern density. Finally, nanomachining was used to address remaining native/multilayer defects. Native catastrophic defects were shown to recover 40% to 70% of target critical dimension after nanomachining, demonstrating the enormous potential for compensating multilayer defects.

  14. Z{sub eff} measurement using extreme ultraviolet bremsstrahlung emission in LHD

    SciTech Connect

    Zhou Hangyu; Dong Chunfeng; Morita, Shigeru; Goto, Motoshi; Yanagibayashi, Jun; Hasuo, Masahiro

    2010-10-15

    Radial profile measurement of Z{sub eff} using visible bremsstrahlung (5300 A) in the Large Helical Device (LHD) has often encountered difficulties because the intensity profile was largely deformed by the nonuniform visible bremsstrahlung emissions from the edge ergodic layer surrounding the core plasma. A space-resolved flat-field extreme ultraviolet (EUV) spectrometer has been newly adopted to measure the Z{sub eff} profile using the EUV bremsstrahlung continuum in the wavelength range of 70-75 A. The EUV bremsstrahlung intensity profiles have been measured and checked for all the magnetic configurations with totally different magnetic field structures in the ergodic layer of LHD. It is found that the nonuniform bremsstrahlung emission from the thick ergodic layer can be entirely eliminated by use of the EUV emission with relatively high photon energy of 170 eV. As a result, the Z{sub eff} profile can be successfully measured for most of discharges regardless of magnetic field structures of the ergodic layer. The Z{sub eff} profiles measured in the EUV range are compared with those measured in the visible range at a magnetic configuration with the thinnest ergodic layer thickness. The result verifies that the use of the EUV bremsstrahlung continuum is an alternative way for the Z{sub eff} measurement in toroidal plasmas with nonuniform bremsstrahlung emissions at the edge. Typical results from the EUV bremsstrahlung measurement are presented showing a fairly flat Z{sub eff} profile with error bars of {+-}14%.

  15. SEMATECH EUV resist benchmarking results

    SciTech Connect

    Ma, Andy; Park, Joo-On; Dean, Kim; Wurm, Stefan; Naulleau, Patrick

    2007-10-27

    Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for next generation lithography technology for the 32 nm HP and beyond. The availability of EUV resists is one of the most significant challenges facing its commercialization. To accelerate EUV resist development, SEMATECH provides access to two exposure tools: (1) The EUV Resist Test Center (RTC) at SEMATECH at the University at Albany, SUNY, NY; and (2) the SEMATECH microexposure tools (ALS-MET) at Lawrence Berkeley National Laboratory (LBNL).

  16. Astronomy and the Extreme Ultraviolet Explorer satellite.

    PubMed

    Bowyer, S

    1994-01-01

    The extreme ultraviolet wave band (100 to 912 angstroms) was thought until recently to be useless to astronomy, primarily because the opacity of the interstellar medium would prevent observations at these wavelengths. However, the interstellar medium has been found to be markedly inhomogeneous in both density and ionization state and the sun is fortunately located in a region of low extreme ultraviolet opacity. The Extreme Ultraviolet Explorer, launched in June 1992, has surveyed the sky in this wave band and has detected a wide variety of astronomical sources at considerable distances, including some extragalactic objects. Studies in the extreme ultraviolet band have already begun to increase our understanding of the contents of the universe.

  17. Astronomy and the Extreme Ultraviolet Explorer satellite

    NASA Technical Reports Server (NTRS)

    Bowyer, S.

    1994-01-01

    The extreme ultraviolet wave band (100 to 912 angstroms) was thought until recently to be useless to astronomy, primarily because the opacity of the interstellar medium would prevent observations at these wavelengths. However, the interstellar medium has been found to be markedly inhomogeneous in both density and ionization state and the sun is fortunately located in a region of low extreme ultraviolet opacity. The Extreme Ultraviolet Explorer, launched in June 1992, has surveyed the sky in this wave band and has detected a wide variety of astronomical sources at considerable distances, including some extragalactic objects. Studies in the extreme ultraviolet band have already begun to increase our understanding of the contents of the universe.

  18. LARGE-SCALE EXTREME-ULTRAVIOLET DISTURBANCES ASSOCIATED WITH A LIMB CORONAL MASS EJECTION

    SciTech Connect

    Dai, Y.; Auchere, F.; Vial, J.-C.; Tang, Y. H.; Zong, W. G.

    2010-01-10

    We present composite observations of a coronal mass ejection (CME) and the associated large-scale extreme-ultraviolet (EUV) disturbances on 2007 December 31 by the Extreme-ultraviolet Imager (EUVI) and COR1 coronagraph on board the recent Solar Terrestrial Relations Observatory mission. For this limb event, the EUV disturbances exhibit some typical characteristics of EUV Imaging Telescope waves: (1) in the 195 A bandpass, diffuse brightenings are observed propagating oppositely away from the flare site with a velocity of approx260 km s{sup -1}, leaving dimmings behind; (2) when the brightenings encounter the boundary of a polar coronal hole, they stop there to form a stationary front. Multi-temperature analysis of the propagating EUV disturbances favors a heating process over a density enhancement in the disturbance region. Furthermore, the EUVI-COR1 composite display shows unambiguously that the propagation of the diffuse brightenings coincides with a large lateral expansion of the CME, which consequently results in a double-loop-structured CME leading edge. Based on these observational facts, we suggest that the wave-like EUV disturbances are a result of magnetic reconfiguration related to the CME liftoff rather than true waves in the corona. Reconnections between the expanding CME magnetic field lines and surrounding quiet-Sun magnetic loops account for the propagating diffuse brightenings; dimmings appear behind them as a consequence of volume expansion. X-ray and radio data provide us with complementary evidence.

  19. Extreme Ultraviolet Imaging Telescope (EIT)

    NASA Technical Reports Server (NTRS)

    Lemen, J. R.; Freeland, S. L.

    1997-01-01

    Efforts concentrated on development and implementation of the SolarSoft (SSW) data analysis system. From an EIT analysis perspective, this system was designed to facilitate efficient reuse and conversion of software developed for Yohkoh/SXT and to take advantage of a large existing body of software developed by the SDAC, Yohkoh, and SOHO instrument teams. Another strong motivation for this system was to provide an EIT analysis environment which permits coordinated analysis of EIT data in conjunction with data from important supporting instruments, including Yohkoh/SXT and the other SOHO coronal instruments; CDS, SUMER, and LASCO. In addition, the SSW system will support coordinated EIT/TRACE analysis (by design) when TRACE data is available; TRACE launch is currently planned for March 1998. Working with Jeff Newmark, the Chianti software package (K.P. Dere et al) and UV /EUV data base was fully integrated into the SSW system to facilitate EIT temperature and emission analysis.

  20. Graphene defect formation by extreme ultraviolet generated photoelectrons

    SciTech Connect

    Gao, A. Lee, C. J.; Bijkerk, F.

    2014-08-07

    We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transformation from microcrystalline to nanocrystalline and then further to amorphous carbon. Further, irradiation of graphene with increased water partial pressure does not significantly change the Raman spectra, which suggests that, in the extremely low energy range, e-beam induced chemical reactions between residual water and graphene are not the dominant mechanism driving defect formation in graphene. Single layer graphene, partially suspended over holes was irradiated with EUV radiation. By comparing with the Raman results from e-beam irradiation, it is concluded that the photoelectrons, especially those from the valence band, contribute to defect formation in graphene during irradiation.

  1. Invited Article: Progress in coherent lithography using table-top extreme ultraviolet lasers.

    PubMed

    Li, W; Urbanski, L; Marconi, M C

    2015-12-01

    Compact (table top) lasers emitting at wavelengths below 50 nm had expanded the spectrum of applications in the extreme ultraviolet (EUV). Among them, the high-flux, highly coherent laser sources enabled lithographic approaches with distinctive characteristics. In this review, we will describe the implementation of a compact EUV lithography system capable of printing features with sub-50 nm resolution using Talbot imaging. This compact system is capable of producing consistent defect-free samples in a reliable and effective manner. Examples of different patterns and structures fabricated with this method will be presented. PMID:26723999

  2. Note: Enhancement of the extreme ultraviolet emission from a potassium plasma by dual laser irradiation.

    PubMed

    Higashiguchi, Takeshi; Yamaguchi, Mami; Otsuka, Takamitsu; Nagata, Takeshi; Ohashi, Hayato; Li, Bowen; D'Arcy, Rebekah; Dunne, Padraig; O'Sullivan, Gerry

    2014-09-01

    Emission spectra from multiply charged potassium ions ranging from K(3+) to K(5+) have been obtained in the extreme ultraviolet (EUV) spectral region. A strong emission feature peaking around 38 nm, corresponding to a photon energy of 32.6 eV, is the dominant spectral feature at time-averaged electron temperatures in the range of 8-12 eV. The variation of this emission with laser intensity and the effects of pre-pulses on the relative conversion efficiency (CE) have been explored experimentally and indicate that an enhancement of about 30% in EUV CE is readily attainable. PMID:25273788

  3. Design of a phase-shifting interferometer in the extreme ultraviolet for high-precision metrology.

    PubMed

    Capeluto, María Gabriela; Marconi, Mario Carlos; Iemmi, Claudio Cesar

    2014-03-01

    The design of a phase-shift interferometer in the extreme ultraviolet (EUV) is described. The interferometer is expected to achieve a significantly higher precision as compared with similar instruments that utilize lasers in the visible range. The interferometer's design is specifically adapted for its utilization with a table top pulsed capillary discharge EUV laser. The numerical model evaluates the errors in the interferograms and in the retrieved wavefront induced by the shot-to-shot fluctuations and pointing instabilities of the laser. PMID:24663354

  4. Photoluminescence-based detection of particle contamination on extreme ultraviolet reticles.

    PubMed

    Gao, A; Rizo, P J; Scaccabarozzi, L; Lee, C J; Banine, V; Bijkerk, F

    2015-06-01

    Here, we propose a comparison-free inspection technique to detect particle contamination on the reticle of extreme ultraviolet (EUV) lithography systems, based on the photoluminescence spectral characteristics of the contaminant particles and their elemental composition. We have analyzed the spectra from different particles found on reticles in EUV lithographic systems and have determined the minimum detectable particle size: 25 nm for organic particles and 100 nm for Al particles. Stainless steel coatings (50 nm thick and 50 × 50 μm(2) in area) exhibit detectable photoluminescence, and the estimated minimum detectable particle is 2 μm. PMID:26133830

  5. Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

    DOEpatents

    Montcalm, Claude; Stearns, Daniel G.; Vernon, Stephen P.

    1999-01-01

    A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

  6. Invited Article: Progress in coherent lithography using table-top extreme ultraviolet lasers

    NASA Astrophysics Data System (ADS)

    Li, W.; Urbanski, L.; Marconi, M. C.

    2015-12-01

    Compact (table top) lasers emitting at wavelengths below 50 nm had expanded the spectrum of applications in the extreme ultraviolet (EUV). Among them, the high-flux, highly coherent laser sources enabled lithographic approaches with distinctive characteristics. In this review, we will describe the implementation of a compact EUV lithography system capable of printing features with sub-50 nm resolution using Talbot imaging. This compact system is capable of producing consistent defect-free samples in a reliable and effective manner. Examples of different patterns and structures fabricated with this method will be presented.

  7. Photoluminescence-based detection of particle contamination on extreme ultraviolet reticles

    NASA Astrophysics Data System (ADS)

    Gao, A.; Rizo, P. J.; Scaccabarozzi, L.; Lee, C. J.; Banine, V.; Bijkerk, F.

    2015-06-01

    Here, we propose a comparison-free inspection technique to detect particle contamination on the reticle of extreme ultraviolet (EUV) lithography systems, based on the photoluminescence spectral characteristics of the contaminant particles and their elemental composition. We have analyzed the spectra from different particles found on reticles in EUV lithographic systems and have determined the minimum detectable particle size: 25 nm for organic particles and 100 nm for Al particles. Stainless steel coatings (50 nm thick and 50 × 50 μm2 in area) exhibit detectable photoluminescence, and the estimated minimum detectable particle is 2 μm.

  8. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    SciTech Connect

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-10-31

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  9. Note: Enhancement of the extreme ultraviolet emission from a potassium plasma by dual laser irradiation

    SciTech Connect

    Higashiguchi, Takeshi Yamaguchi, Mami; Otsuka, Takamitsu; Nagata, Takeshi; Ohashi, Hayato; Li, Bowen; D’Arcy, Rebekah; Dunne, Padraig; O’Sullivan, Gerry

    2014-09-15

    Emission spectra from multiply charged potassium ions ranging from K{sup 3+} to K{sup 5+} have been obtained in the extreme ultraviolet (EUV) spectral region. A strong emission feature peaking around 38 nm, corresponding to a photon energy of 32.6 eV, is the dominant spectral feature at time-averaged electron temperatures in the range of 8−12 eV. The variation of this emission with laser intensity and the effects of pre-pulses on the relative conversion efficiency (CE) have been explored experimentally and indicate that an enhancement of about 30% in EUV CE is readily attainable.

  10. Design, fabrication and performance of two grazing incidence telescopes for celestial extreme ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Lampton, M.; Cash, W.; Malina, R. F.; Bowyer, S.

    1977-01-01

    The design and performance of grazing incidence telescopes for celestial extreme ultraviolet (EUV) astronomy are described. The telescopes basically consist of a star tracker, collimator, grazing incidence mirror, vacuum box lid, vacuum housing, filters, a ranicon detector, an electronics box, and an aspect camera. For the survey mirror a Wolter-Schwarzschild type II configuration was selected. Diamond-turning was used for mirror fabrication, a technique which machines surfaces to the order of 10 microns over the required dimensions. The design of the EUV spectrometer is discussed with particular reference to the optics for a primarily spectroscopic application and the fabrication of the f/10 optics.

  11. Spin-on-glass coatings for the generation of super-polishedsubstrates for extreme ultraviolet optics

    SciTech Connect

    Salmassi, Farhad; Naulleau, Patrick P.; Gullikson, Eric M.

    2005-01-01

    Substrates intended for use as extreme ultraviolet (EUV) optics have extremely stringent requirements in terms of finish. These requirements can dramatically increase the cost and fabrication time, especially when non-conventional shapes, such as toroids, are required. Here we present a spin-on-glass resist process capable of generating super-polished parts from inexpensive substrates. The method has been used to render diamond-turned substrates compatible for use as EUV optics. Toroidal diamond-turned optics with starting rms roughness in the 3.3 to 3.7 nm range have been smoothed to the 0.4 to 0.6 nm range. EUV reflectometry characterization of these optics has demonstrated reflectivities of approximately 63%.

  12. Alignment of a multilayer-coated imaging system using extreme ultraviolet Foucault and Ronchi interferometric testing

    SciTech Connect

    Ray-Chaudhuri, A.K.; Ng, W.; Cerrina, F.; Tan, Z.; Bjorkholm, J.; Tennant, D.; Spector, S.J.

    1995-11-01

    Multilayer-coated imaging systems for extreme ultraviolet (EUV) lithography at 13 nm represent a significant challenge for alignment and characterization. The standard practice of utilizing visible light interferometry fundamentally provides an incomplete picture since this technique fails to account for phase effects induced by the multilayer coating. Thus the development of optical techniques at the functional EUV wavelength is required. We present the development of two EUV optical tests based on Foucault and Ronchi techniques. These relatively simple techniques are extremely sensitive due to the factor of 50 reduction in wavelength. Both techniques were utilized to align a Mo--Si multilayer-coated Schwarzschild camera. By varying the illumination wavelength, phase shift effects due to the interplay of multilayer coating and incident angle were uniquely detected. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}

  13. Electro-optical system for scanning microscopy of extreme ultraviolet masks with a high harmonic generation source.

    PubMed

    Naulleau, Patrick P; Anderson, Christopher N; Anderson, Erik H; Andreson, Nord; Chao, Weilun; Choi, Changhoon; Goldberg, Kenneth A; Gullikson, Eric M; Kim, Seong-Sue; Lee, Donggun; Miyakawa, Ryan; Park, Jongju; Rekawa, Seno; Salmassi, Farhad

    2014-08-25

    A self-contained electro-optical module for scanning extreme ultraviolet (EUV) reflection microscopy at 13.5 nm wavelength has been developed. The system has been designed to work with stand-alone commercially available EUV high harmonic generation (HHG) sources through the implementation of narrowband harmonic selecting multilayers and off-axis elliptical short focal length zoneplates. The module has been successfully integrated into an EUV mask scanning microscope achieving diffraction limited imaging performance (84 nm point spread function). PMID:25321224

  14. Extreme ultraviolet spectroscopy and photometry of VV Puppis during a high accretion state

    NASA Technical Reports Server (NTRS)

    Vennes, Stephane; Szkody, Paula; Sion, Edward M.; Long, Knox S.

    1995-01-01

    We determine the physical properties of the accretion region of the AM Her-type binary VV Puppis using extreme ultraviolet (EUV) medium-resolution spectroscopy and photometry obtained with the Extreme Ultraviolet Explorer (EUVE) observatory. The EUV continuum from VV Pup was detected in the wavelength range from 75 to 135 A and was simultaneously recorded with the Deep Survey/Spectrometer (DS/S) imaging telescope, allowing for the extraction of an accurate light curve. VV Pup appeared to have entered a high-accretion state just prior to the pointed EUVE observations. We use the EUV light curve to infer the diameter of the accretion region (d = 220 km) assuming a hemispherical geometry and a radius of 9000 km for the white dwarf. We perform a model atmosphere analysis and, based on the light curve properties and assuming a distance of 145 pc, we derive an effective temperature of the accretion region in the range 270,000 is less than T(sub eff) is less than 360,000 K and a neutral hydrogen column density in the local interstellar medium of n(sub H) = 1.9 - 3.7 x 10(exp 19)/sq cm. The total EUV/soft X-ray energy radiated by the accretion region is approximately 3.5 x 10(exp 32) ergs/s. Our results provide a first verification of past suggestions that deep heating of the white dwarf surface produces the soft X-ray flux from the polars. We present a possible detection of O VI absortion features, and we suggest that extensive EUVE observations targeting high-accretion events may result in oxygen and heavier element abundance determination in the accretion region.

  15. Universal EUV in-band intensity detector

    DOEpatents

    Berger, Kurt W.

    2004-08-24

    Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

  16. Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength

    PubMed Central

    Fan, Daniel; Wang, Li; Ekinci, Yasin

    2016-01-01

    Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam. PMID:27501749

  17. Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength.

    PubMed

    Fan, Daniel; Wang, Li; Ekinci, Yasin

    2016-01-01

    Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam. PMID:27501749

  18. Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength.

    PubMed

    Fan, Daniel; Wang, Li; Ekinci, Yasin

    2016-01-01

    Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam.

  19. Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength

    NASA Astrophysics Data System (ADS)

    Fan, Daniel; Wang, Li; Ekinci, Yasin

    2016-08-01

    Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam.

  20. Characterization of material ablation driven by laser generated intense extreme ultraviolet light

    SciTech Connect

    Tanaka, Nozomi Masuda, Masaya; Deguchi, Ryo; Murakami, Masakatsu; Fujioka, Shinsuke; Yogo, Akifumi; Nishimura, Hiroaki; Sunahara, Atsushi

    2015-09-14

    We present a comparative study on the hydrodynamic behaviour of plasmas generated by material ablation by the irradiation of nanosecond extreme ultraviolet (EUV or XUV) or infrared laser pulses on solid samples. It was clarified that the difference in the photon energy deposition and following material heating mechanism between these two lights result in the difference in the plasma parameters and plasma expansion characteristics. Silicon plate was ablated by either focused intense EUV pulse (λ = 9–25 nm, 10 ns) or laser pulse (λ = 1064 nm, 10 ns), both with an intensity of ∼10{sup 9 }W/cm{sup 2}. Both the angular distributions and energy spectra of the expanding ions revealed that the photoionized plasma generated by the EUV light differs significantly from that produced by the laser. The laser-generated plasma undergoes spherical expansion, whereas the EUV-generated plasma undergoes planar expansion in a comparatively narrow angular range. It is presumed that the EUV radiation is transmitted through the expanding plasma and directly photoionizes the samples in the solid phase, consequently forming a high-density and high-pressure plasma. Due to a steep pressure gradient along the direction of the target normal, the EUV plasma expands straightforward resulting in the narrower angular distribution observed.

  1. The joint astrophysical plasmadynamic experiment extreme ultraviolet spectrometer: resolving power

    NASA Astrophysics Data System (ADS)

    Berendse, F. B.; Cruddace, R. G.; Kowalski, M. P.; Yentis, D. J.; Hunter, W. R.; Fritz, G. G.; Siegmund, O.; Heidemann, K.; Lenke, R.; Seifert, A.; Barbee, T. W., Jr.

    2006-06-01

    The Joint astrophysical Plasmadynamic EXperiment (J-PEX) is a high-resolution extreme ultraviolet (EUV) spectrometer (220-245 Å) used for the study of white dwarf atmospheres. Significant improvements have been achieved in both the normal-incidence gratings and the focal-plane detector since its first successful sounding rocket flight in 2001. The spherical laminar gratings have been replaced by paraboloidal gratings. The substrates of the new gratings have measured slope errors less than 0.35 arcsec. The gratings were recorded holographically and the rulings transferred into the silica substrates by ion etching. This procedure was followed by polymer overcoat to reduce the blaze angle of the groove profile. The detector uses microchannel plates with 6 μm pores and a cross-strip anode, providing 17.9 μm resolution in the dispersion direction. The detector employs a KBr photocathode with a projected efficiency of 0.24 at 256 Å. Using ray tracing simulations, we predict the resolving power expected from the spectrometer during upcoming EUV calibrations with a He II discharge source.

  2. Laser produced plasma for efficient extreme ultraviolet light sources

    SciTech Connect

    Donnelly, Tony; Cummins, Thomas; O' Gorman, Colm; Li Bowen; Harte, Colm S.; O'Reilly, Fergal; Sokell, Emma; Dunne, Padraig; O'Sullivan, Gerry

    2012-05-25

    Extreme ultraviolet emission from laser produced plasma and their relevance to EUV source development is discussed. The current state of the field for Sn LPP sources operating at 13.5 nm is described and initial results are given for EUV emission from CO{sub 2} laser irradiation of a bulk Sn target. A maximum conversion efficiency of 1.7% has been measured and the influence of the CO{sub 2} laser temporal profile on the CE is discussed. A double pulse irradiation scheme is shown to increase CE up to a maximum value of 2.1% for an optimum prepulse - pulse delay of 150 ns. The emergence of a new EUVL source wavelength at 6.7 nm based on Gd and Tb LPPs has been outlined. An initial experiment investigating picosecond laser irradiation as a means to produce strong 6.7 nm emission from a Gd{sub 2}O{sub 3} target has been performed and verified.

  3. Automated detection of oscillations in extreme ultraviolet imaging data

    NASA Astrophysics Data System (ADS)

    Ireland, J.; Marsh, M. S.; Kucera, T. A.; Young, C. A.

    2008-12-01

    The corona is now known to support many different types of oscillation. Initial detection of these oscillations currently relied on manual labor. With the advent of much higher cadence EUV (extreme ultraviolet) data at better spatial resolution, sifting through the data manually to look for oscillatory material becomes an onerous task. Further, different observers tend to see different behavior in the data. To overcome these problems, we introduce a Bayesian probability-based automated method to detect areas in EUV images that support oscillations. The method is fast and can handle time series data with even or uneven cadences. Interestingly, the Bayesian approach allows us to generate a probability that a given frequency is present without the need for an estimate of the noise in the data. We also generate simple and intuitive "quality measures" for each detected oscillation. This will allow users to select the "best" examples in a given dataset automatically. The method is demonstrated on existing datasets (EIT, TRACE, STEREO). Its application to Solar Dynamics Observatory data is also discussed. We also discuss some of the problems in detecting oscillations in the presence of a significant background trend which can pollute the frequency spectrum.

  4. Imaging characteristics of the Extreme Ultraviolet Explorer microchannel plate detectors

    NASA Technical Reports Server (NTRS)

    Vallerga, J. V.; Kaplan, G. C.; Siegmund, O. H. W.; Lampton, M.; Malina, R. F.

    1989-01-01

    The Extreme Ultraviolet Explorer (EUVE) satellite will conduct an all-sky survey over the wavelength range from 70 A to 760 A using four grazing-incidence telescopes and seven microchannel-plate (MCP) detectors. The imaging photon-counting MCP detectors have active areas of 19.6 cm2. Photon arrival position is determined using a wedge-and-strip anode and associated pulse-encoding electronics. The imaging characteristics of the EUVE flight detectors are presented including image distortion, flat-field response, and spatial differential nonlinearity. Also included is a detailed discussion of image distortions due to the detector mechanical assembly, the wedge-and-strip anode, and the electronics. Model predictions of these distortions are compared to preflight calibration images which show distortions less than 1.3 percent rms of the detector diameter of 50 mm before correction. The plans for correcting these residual detector image distortions to less than 0.1 percent rms are also presented.

  5. Extreme Ultraviolet Resist Outgassing Quantification Verification by Resist Film Analysis

    NASA Astrophysics Data System (ADS)

    Kobayashi, Shinji; Santillan, Julius Joseph; Oizumi, Hiroaki; Itani, Toshiro

    2009-06-01

    Numerous investigations on extreme ultraviolet (EUV) resist outgassing have been performed using the pressure rise and gas chromatography mass spectrometry (GC-MS) method. However, the reliability of the results obtained with these methods has not been clearly discussed. In this paper, to analyze and verify the reliability of the resist outgassing results, de-protection reaction and photo acid generator's (PAG's) decomposing reaction in the resist film, which are viewed as the main source of resist outgassing, are investigated using the Fourier transform infrared spectroscopy (FT-IR). Analysis was performed on a resist film after EUV exposure, before post exposure bake (PEB). Based on the measured amount of de-protection reaction in the resist film, the amounts of resist outgassing released were calculated. It was found that the resist outgassing amount obtained through FT-IR was somewhere between those obtained using the pressure rise and GC-MS methods results. These similarities in the results substantiate the reliability of resist outgassing amounts obtained through these analysis methods.

  6. Far and extreme ultraviolet astronomy with ORFEUS

    NASA Technical Reports Server (NTRS)

    Kraemer, G.; Barnstedt, J.; Eberhard, N.; Grewing, M.; Gringel, W.; Haas, C.; Kaelble, A.; Kappelmann, N.; Petrik, J.; Appenzeller, I.

    1990-01-01

    ORFEUS (Orbiting and Retrievable Far and Extreme Ultraviolet Spectrometer) is a 1 m normal incidence telescope for spectroscopic investigations of cosmic sources in the far and extreme ultraviolet spectral range. The instrument will be integrated into the freeflyer platform ASTRO-SPAS. ORFEUS-SPAS is scheduled with STS ENDEAVOUR in September 1992. We describe the telescope with its two spectrometer and their capabilities i.e., spectral range, resolution and overall sensitivity. The main classes of objects to be observed with the instrument are discussed and two examples of simulated spectra for the white dwarf HZ43 and an O9-star in LMC are shown.

  7. Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography.

    PubMed

    Hong, Seongchul; Kim, Jung Sik; Lee, Jae Uk; Lee, Seung Min; Kim, Jung Hwan; Ahn, Jinho

    2015-11-01

    In addition to the development of extreme ultraviolet lithography (EUVL), studies on beyond extreme ultraviolet lithography (BEUVL), which uses radiation with a wavelength of 6.7 nm, are in progress for their application in high-volume manufacturing. The BEUV wavelength, which is much shorter than the EUV wavelength, improves the resolution of patterned features. However, suitable materials for the mask stack of BEUVL are still under development. In this study, the applicability of metallic materials, such as Ni, Co, Ir, W, and Ta, as the absorber in a binary-intensity BEUVL mask was evaluated. The mask-imaging properties were simulated by adopting a thickness that ensured a reflectivity of <1% for each material. Furthermore, we used a multilayered La/B mirror--which exhibited a high reflectivity at a wavelength of 6.7 nm--because BEUV light is absorbed by most materials, and therefore uses reflective optics as desired. The numerical aperture (NA), angle of incidence, and demagnification factor were 0.5 and 0.6, 6 degrees, and 8x, respectively. We confirmed that a line-and-space pattern with a half-pitch of 11 nm can be patterned with metallic absorbers by using a high NA. PMID:26726569

  8. Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography.

    PubMed

    Hong, Seongchul; Kim, Jung Sik; Lee, Jae Uk; Lee, Seung Min; Kim, Jung Hwan; Ahn, Jinho

    2015-11-01

    In addition to the development of extreme ultraviolet lithography (EUVL), studies on beyond extreme ultraviolet lithography (BEUVL), which uses radiation with a wavelength of 6.7 nm, are in progress for their application in high-volume manufacturing. The BEUV wavelength, which is much shorter than the EUV wavelength, improves the resolution of patterned features. However, suitable materials for the mask stack of BEUVL are still under development. In this study, the applicability of metallic materials, such as Ni, Co, Ir, W, and Ta, as the absorber in a binary-intensity BEUVL mask was evaluated. The mask-imaging properties were simulated by adopting a thickness that ensured a reflectivity of <1% for each material. Furthermore, we used a multilayered La/B mirror--which exhibited a high reflectivity at a wavelength of 6.7 nm--because BEUV light is absorbed by most materials, and therefore uses reflective optics as desired. The numerical aperture (NA), angle of incidence, and demagnification factor were 0.5 and 0.6, 6 degrees, and 8x, respectively. We confirmed that a line-and-space pattern with a half-pitch of 11 nm can be patterned with metallic absorbers by using a high NA.

  9. Extreme ultraviolet proximity lithography for fast, flexible and parallel fabrication of infrared antennas.

    PubMed

    Kunkemöller, Georg; Mass, Tobias W W; Michel, Ann-Katrin U; Kim, Hyun-Su; Brose, Sascha; Danylyuk, Serhiy; Taubner, Thomas; Juschkin, Larissa

    2015-10-01

    We present a method for fabrication of large arrays of nano-antennas using extreme-ultraviolet (EUV) illumination. A discharge-produced plasma source generating EUV radiation around 10.88 nm wavelength is used for the illumination of a photoresist via a mask in a proximity printing setup. The method of metallic nanoantennas fabrication utilizes a bilayer photoresist and employs a lift-off process. The impact of Fresnel-diffraction of EUV light in the mask on a shape of the nanostructures has been investigated. It is shown how by the use of the same rectangular apertures in the transmission mask, antennas of various shapes can be fabricated. Using Fourier transform infrared spectroscopy, spectra of antennas reflectivity were measured and compared to FDTD simulations demonstrating good agreement.

  10. Intense extreme ultraviolet emission from the B star Epsilon Canis Majoris

    NASA Technical Reports Server (NTRS)

    Vallerga, John V.; Vedder, Peter W.; Welsh, Barry Y.

    1993-01-01

    We report the discovery of the brightest nonsolar source of EUV emission: the B2 II star Epsilon Canis Majoris. This source has been detected by the Extreme Ultraviolet Explorer satellite's all-sky photometric survey. It is approximately 30 times brighter at 600 A than the predicted emission from the hot white dwarf star HZ 43, previously believed to be the brightest EUV source. We have fitted a simple B star photospheric model to the observed broadband EUV fluxes to explain this emission. Assuming a stellar temperature of 25,000 K and a gravity (log g) of 3.3, we derive an interstellar hydrogen column density of 1.05 +/- 0.05 x 10 exp 18/sq cm over the 187 pc to the star. This corresponds to a line-of-sight number density of hydrogen, of 0.002/cu cm, which is comparable to values found in the rarefied Local Bubble region which surrounds the sun.

  11. The ion microscope as a tool for quantitative measurements in the extreme ultraviolet

    PubMed Central

    Tsatrafyllis, N.; Bergues, B.; Schröder, H.; Veisz, L.; Skantzakis, E.; Gray, D.; Bodi, B.; Kuhn, S.; Tsakiris, G. D.; Charalambidis, D.; Tzallas, P.

    2016-01-01

    We demonstrate a tool for quantitative measurements in the extreme ultraviolet (EUV) spectral region measuring spatially resolved atomic ionization products at the focus of an EUV beam. The ionizing radiation is a comb of the 11th–15th harmonics of a Ti:Sapphire femtosecond laser beam produced in a Xenon gas jet. The spatial ion distribution at the focus of the harmonics is recorded using an ion microscope. Spatially resolved single- and two-photon ionization products of Argon and Helium are observed. From such ion distributions single- and two-photon generalized cross sections can be extracted by a self-calibrating method. The observation of spatially resolved two-EUV-photon ionization constitutes an initial step towards future single-shot temporal characterization of attosecond pulses. PMID:26868370

  12. The ion microscope as a tool for quantitative measurements in the extreme ultraviolet.

    PubMed

    Tsatrafyllis, N; Bergues, B; Schröder, H; Veisz, L; Skantzakis, E; Gray, D; Bodi, B; Kuhn, S; Tsakiris, G D; Charalambidis, D; Tzallas, P

    2016-01-01

    We demonstrate a tool for quantitative measurements in the extreme ultraviolet (EUV) spectral region measuring spatially resolved atomic ionization products at the focus of an EUV beam. The ionizing radiation is a comb of the 11(th)-15(th) harmonics of a Ti:Sapphire femtosecond laser beam produced in a Xenon gas jet. The spatial ion distribution at the focus of the harmonics is recorded using an ion microscope. Spatially resolved single- and two-photon ionization products of Argon and Helium are observed. From such ion distributions single- and two-photon generalized cross sections can be extracted by a self-calibrating method. The observation of spatially resolved two-EUV-photon ionization constitutes an initial step towards future single-shot temporal characterization of attosecond pulses. PMID:26868370

  13. Extreme ultraviolet proximity lithography for fast, flexible and parallel fabrication of infrared antennas.

    PubMed

    Kunkemöller, Georg; Mass, Tobias W W; Michel, Ann-Katrin U; Kim, Hyun-Su; Brose, Sascha; Danylyuk, Serhiy; Taubner, Thomas; Juschkin, Larissa

    2015-10-01

    We present a method for fabrication of large arrays of nano-antennas using extreme-ultraviolet (EUV) illumination. A discharge-produced plasma source generating EUV radiation around 10.88 nm wavelength is used for the illumination of a photoresist via a mask in a proximity printing setup. The method of metallic nanoantennas fabrication utilizes a bilayer photoresist and employs a lift-off process. The impact of Fresnel-diffraction of EUV light in the mask on a shape of the nanostructures has been investigated. It is shown how by the use of the same rectangular apertures in the transmission mask, antennas of various shapes can be fabricated. Using Fourier transform infrared spectroscopy, spectra of antennas reflectivity were measured and compared to FDTD simulations demonstrating good agreement. PMID:26480066

  14. Numerical evaluation of a 13.5-nm high-brightness microplasma extreme ultraviolet source

    SciTech Connect

    Hara, Hiroyuki Arai, Goki; Dinh, Thanh-Hung; Higashiguchi, Takeshi; Jiang, Weihua; Miura, Taisuke; Endo, Akira; Ejima, Takeo; Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry; Sunahara, Atsushi

    2015-11-21

    The extreme ultraviolet (EUV) emission and its spatial distribution as well as plasma parameters in a microplasma high-brightness light source are characterized by the use of a two-dimensional radiation hydrodynamic simulation. The expected EUV source size, which is determined by the expansion of the microplasma due to hydrodynamic motion, was evaluated to be 16 μm (full width) and was almost reproduced by the experimental result which showed an emission source diameter of 18–20 μm at a laser pulse duration of 150 ps [full width at half-maximum]. The numerical simulation suggests that high brightness EUV sources should be produced by use of a dot target based microplasma with a source diameter of about 20 μm.

  15. Methods and apparatus for use with extreme ultraviolet light having contamination protection

    DOEpatents

    Chilese, Francis C.; Torczynski, John R.; Garcia, Rudy; Klebanoff, Leonard E.; Delgado, Gildardo R.; Rader, Daniel J.; Geller, Anthony S.; Gallis, Michail A.

    2016-07-12

    An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

  16. Extreme ultraviolet spectra of solar flares from the extreme ultraviolet spectroheliograph SPIRIT onboard the CORONAS-F satellite

    SciTech Connect

    Shestov, S.; Kuzin, S.; Reva, A.

    2014-01-01

    We present detailed extreme ultraviolet (EUV) spectra of four large solar flares: M5.6, X1.3, X3.4, and X17 classes in the spectral ranges 176-207 Å and 280-330 Å. These spectra were obtained by the slitless spectroheliograph SPIRIT onboard the CORONAS-F satellite. To our knowledge, these are the first detailed EUV spectra of large flares obtained with a spectral resolution of ∼0.1 Å. We performed a comprehensive analysis of the obtained spectra and provide identification of the observed spectral lines. The identification was performed based on the calculation of synthetic spectra (the CHIANTI database was used), with simultaneous calculations of the differential emission measure (DEM) and density of the emitting plasma. More than 50 intense lines are present in the spectra that correspond to a temperature range of T = 0.5-16 MK; most of the lines belong to Fe, Ni, Ca, Mg, and Si ions. In all the considered flares, intense hot lines from Ca XVII, Ca XVIII, Fe XX, Fe XXII, and Fe XXIV are observed. The calculated DEMs have a peak at T ∼ 10 MK. The densities were determined using Fe XI-Fe XIII lines and averaged 6.5 × 10{sup 9} cm{sup –3}. We also discuss the identification, accuracy, and major discrepancies of the spectral line intensity prediction.

  17. Absolute sensitivity calibration of vacuum and extreme ultraviolet spectrometer systems and Z{sub eff} measurement based on bremsstrahlung continuum in HL-2A tokamak

    SciTech Connect

    Zhou Hangyu; Cui Zhengying; Fu Bingzhong; Sun Ping; Gao Yadong; Xu Yuan; Lu Ping; Yang Qingwei; Duan Xuru; Morita, Shigeru; Goto, Motoshi; Dong Chunfeng

    2012-10-15

    A grazing-incidence flat-field extreme ultraviolet (EUV) spectrometer has been newly developed in HL-2A tokamak. Typical spectral lines are observed from intrinsic impurities of carbon, oxygen, iron, and extrinsic impurity of helium in the wavelength range of 20 A-500 A. Bremsstrahlung continuum is measured at different electron densities of HL-2A discharges to calibrate absolute sensitivity of the EUV spectrometer system and to measure effective ionic charge, Z{sub eff}. The sensitivity of a vacuum ultraviolet (VUV) spectrometer system is also absolutely calibrated in overlapped wavelength range of 300 A-500 A by comparing the intensity between VUV and EUV line emissions.

  18. 13 Years of SOHO/CELIAS/SEM Calibrated Solar Extreme Ultraviolet Irradiance Data

    NASA Astrophysics Data System (ADS)

    Judge, D.; Didkovsky, L.; Wieman, S.; Gangopadhyay, P.

    2008-12-01

    A verified and updated version of the calibrated SOHO/CELIAS/SEM (absolute) solar extreme ultraviolet (EUV) measurements from the beginning of the mission in 1996 through the present is available at the University of Southern California Space Sciences Center website. To complete this new version, six (1999- 2006) sounding rocket under-flights were analyzed using measurements from both a very stable Rare Gas (Ne) Ionization Cell (RGIC) and a clone of the flight SEM instrument. These sounding rocket under-flights have provided a number of reference points that have been compared with the solar flux data published on our web site (last revised in 2000). These reference points are in good agreement with the solar cycle EUV flux for the 30.4 nm first order (26 nm to 34 nm) SEM channels, indicating a very small (less than 1 percent) averaged difference from the published flux for the six under-flights. Thirteen years of continuous and accurate SEM data will continue to provide important information about short term (solar flares) and long term (solar cycle) changes of EUV solar irradiance, and will be used for advancing solar models, for more accurate Earth atmosphere drag models, ionization proxies, and atmospheric dynamics generally, and will also provide solar EUV measurement overlap with the new SDO Extreme ultraviolet Variability Experiment (EVE), to be launched in 2009.

  19. On the nature of the extreme-ultraviolet late phase of solar flares

    SciTech Connect

    Li, Y.; Ding, M. D.; Guo, Y.; Dai, Y.

    2014-10-01

    The extreme-ultraviolet (EUV) late phase of solar flares is a second peak of warm coronal emissions (e.g., Fe XVI) for many minutes to a few hours after the GOES soft X-ray peak. It was first observed by the EUV Variability Experiment on board the Solar Dynamics Observatory (SDO). The late-phase emission originates from a second set of longer loops (late-phase loops) that are higher than the main flaring loops. It is suggested to be caused by either additional heating or long-lasting cooling. In this paper, we study the role of long-lasting cooling and additional heating in producing the EUV late phase using the enthalpy based thermal evolution of loops model. We find that a long cooling process in late-phase loops can well explain the presence of the EUV late-phase emission, but we cannot exclude the possibility of additional heating in the decay phase. Moreover, we provide two preliminary methods based on the UV and EUV emissions from the Atmospheric Imaging Assembly on board SDO to determine whether or not additional heating plays a role in the late-phase emission. Using nonlinear force-free field modeling, we study the magnetic configuration of the EUV late phase. It is found that the late phase can be generated either in hot spine field lines associated with a magnetic null point or in large-scale magnetic loops of multipolar magnetic fields. In this paper, we also discuss why the EUV late phase is usually observed in warm coronal emissions and why the majority of flares do not exhibit an EUV late phase.

  20. Improved Radiometry For Extreme-ultraviolet Lithography

    SciTech Connect

    Tarrio, C.; Vest, R.E.; Grantham, S.; Liu, K.; Lucatorto, T.B.; Shaw, P.S.

    2004-05-12

    The absolute cryogenic radiometer (ACR), an electrical-substitution-based detector, is the most accurate method for measurement of radiant power in the extreme ultraviolet. At the National Institute of Standards and Technology, ACR-based measurements are currently used as standards from the infrared and into the vacuum ultraviolet, however, no radiometric facilities are currently in operation with enough incident power to use an ACR in the extreme-ultraviolet region. Therefore, we have installed transfer optics on an existing beamline to allow the installation of the ACR as an additional endstation. We will describe the current radiometric beamline, the ACR, and the high-throughput beamline, and the transfer-optical system. Finally, we will present the performance of the transfer optics and measurements of the beam profile and incident power of the new endstation.

  1. Diffuse Extreme-Ultraviolet Emission from the Coma Cluster: Evidence for Rapidly Cooling Gases at Submegakelvin Temperatures

    PubMed

    Lieu; Mittaz; Bowyer; Breen; Lockman; Murphy; Hwang

    1996-11-22

    The central region of the Coma cluster of galaxies was observed in the energy band from 0.065 to 0.245 kiloelectron volts by the Deep Survey telescope aboard the Extreme Ultraviolet Explorer. A diffuse emission halo of angular diameter approximately 30 arc minutes was detected. The extreme-ultraviolet (EUV) emission level exceeds that expected from the x-ray temperature gas in Coma. This halo suggests the presence of two more phases in the emitting gas, one at a temperature of approximately 2 x 10(6) kelvin and the other at approximately 8 x 10(5) kelvin. The latter phase cools rapidly and, in steady state, would have produced cold matter with a mass of approximately 10(14) solar masses within the EUV halo. Although a similar EUV enhancement was discovered in the Virgo cluster, this detection in Coma applies to a noncooling flow system. PMID:8910264

  2. Diffuse Extreme-Ultraviolet Emission from the Coma Cluster: Evidence for Rapidly Cooling Gases at Submegakelvin Temperatures

    PubMed

    Lieu; Mittaz; Bowyer; Breen; Lockman; Murphy; Hwang

    1996-11-22

    The central region of the Coma cluster of galaxies was observed in the energy band from 0.065 to 0.245 kiloelectron volts by the Deep Survey telescope aboard the Extreme Ultraviolet Explorer. A diffuse emission halo of angular diameter approximately 30 arc minutes was detected. The extreme-ultraviolet (EUV) emission level exceeds that expected from the x-ray temperature gas in Coma. This halo suggests the presence of two more phases in the emitting gas, one at a temperature of approximately 2 x 10(6) kelvin and the other at approximately 8 x 10(5) kelvin. The latter phase cools rapidly and, in steady state, would have produced cold matter with a mass of approximately 10(14) solar masses within the EUV halo. Although a similar EUV enhancement was discovered in the Virgo cluster, this detection in Coma applies to a noncooling flow system.

  3. Three new extreme ultraviolet spectrometers on NSTX-U for impurity monitoring

    NASA Astrophysics Data System (ADS)

    Weller, M. E.; Beiersdorfer, P.; Soukhanovskii, V. A.; Magee, E. W.; Scotti, F.

    2016-11-01

    Three extreme ultraviolet (EUV) spectrometers have been mounted on the National Spherical Torus Experiment-Upgrade (NSTX-U). All three are flat-field grazing-incidence spectrometers and are dubbed X-ray and Extreme Ultraviolet Spectrometer (XEUS, 8-70 Å), Long-Wavelength Extreme Ultraviolet Spectrometer (LoWEUS, 190-440 Å), and Metal Monitor and Lithium Spectrometer Assembly (MonaLisa, 50-220 Å). XEUS and LoWEUS were previously implemented on NSTX to monitor impurities from low- to high-Z sources and to study impurity transport while MonaLisa is new and provides the system increased spectral coverage. The spectrometers will also be a critical diagnostic on the planned laser blow-off system for NSTX-U, which will be used for impurity edge and core ion transport studies, edge-transport code development, and benchmarking atomic physics codes.

  4. Design and fabrication of advanced EUV diffractive elements

    SciTech Connect

    Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H.; Gullikson, Eric M.

    2003-11-16

    As extreme ultraviolet (EUV) lithography approaches commercial reality, the development of EUV-compatible diffractive structures becomes increasingly important. Such devices are relevant to many aspects of EUV technology including interferometry, illumination, and spectral filtering. Moreover, the current scarcity of high power EUV sources makes the optical efficiency of these diffractive structures a paramount concern. This fact has led to a strong interest in phase-enhanced diffractive structures. Here we describe recent advancements made in the fabrication of such devices.

  5. Experiences with thin film filter development for the Extreme Ultraviolet Explorer

    NASA Technical Reports Server (NTRS)

    Vallerga, J. V.; Vedder, P. W.; Siegmund, O. H. W.

    1993-01-01

    The design, development, and optimization of the thin film filters used on the Extreme Ultraviolet Explorer (EUVE) Satellite to define the EUV wavelength bandpasses of the individual instruments was a complicated task. The bandpasses had to be optimized for the astrophysical goals of the EUVE mission and constrained by the strong geocoronal EUV background emission. Materials with optical constants that met these requirements had to be found and tested. In many cases these materials were not compatible or were not strong enough to survive the intense vibrations of a rocket launch. Other effects, such as photoelectron 'halo' produced in the filters, were not discovered until flight qualification. The final set of flight filters included: lexan/boron, aluminum/carbon, titanium/antimony/aluminum, and tin/silicon monoxide. This paper discusses the lessons learned in the development of these filters, including the optimization process, material interactions and problems, calibration techniques, vibration susceptibility, thermal tests, and photoelectron emission. We feel the experiences gained over the last 10 years creating the filter sets for EUVE will be invaluable for future missions that use thin film filters.

  6. Characterization of a laser-plasma extreme-ultraviolet source using a rotating cryogenic Xe target

    NASA Astrophysics Data System (ADS)

    Amano, S.; Masuda, K.; Shimoura, A.; Miyamoto, S.; Mochizuki, T.

    2010-10-01

    A laser-plasma source for extreme-ultraviolet (EUV) light that uses a rotating cryogenic solid-state Xe target has been characterized. We focused on parameters at the wavelength of 13.5 nm with 2% bandwidth required for an EUV lithography source and investigated improvements of the conversion efficiency (CE). With the drum rotating, there was an increase in CE and less fast ions compared with the case for the drum at rest. It is considered that the Xe gas on the target surface can produce optimal-scale plasma, and satellite emission lines in Xe plasma effectively increase the EUV intensity, and the ion number is decreased by the gas curtain effect. The dependence of CE on the laser wavelength, laser energy and intensity also studied. As a result, the maximum CE was 0.9% at 13.5 nm with 2% bandwidth under the optimal condition. By continuous irradiation of a Nd:YAG slab laser at a repetition rate of 320 Hz and an average power of 110 W, the target continuously generated EUV light with an average power of 1 W at 13.5 nm with 2% bandwidth. The achieved performances provide valuable information for the design of a future EUV lithography source.

  7. Enhancements of extreme ultraviolet emission using prepulsed Sn laser-produced plasmas for advanced lithography applications

    SciTech Connect

    Freeman, J. R.; Harilal, S. S.; Hassanein, A.

    2011-10-15

    Laser-produced plasmas (LPP) from Sn targets are seriously considered to be the light source for extreme ultraviolet (EUV) next generation lithography, and optimization of such a source will lead to improved efficiency and reduced cost of ownership of the entire lithography system. We investigated the role of reheating a prepulsed plasma and its effect on EUV conversion efficiency (CE). A 6 ns, 1.06 {mu}m Nd:yttrium aluminum garnet laser was used to generate the initial plasma that was then reheated by a 40 ns, 10.6 {mu}m CO{sub 2} laser to generate enhanced EUV emission from a planar Sn target. The effects of prepulsed laser intensity and delay timings between the prepulsed and the pumping pulse were investigated to find the optimal pre-plasma conditions before the pumping pulse. The initial optimization of these parameters resulted in 25% increase in CE from the tin LPP. The cause of increased EUV emission was identified from EUV emission spectra and ion signal data.

  8. Laser-assisted vacuum arc extreme ultraviolet source: a comparison of picosecond and nanosecond laser triggering

    NASA Astrophysics Data System (ADS)

    Beyene, Girum A.; Tobin, Isaac; Juschkin, Larissa; Hayden, Patrick; O’Sullivan, Gerry; Sokell, Emma; Zakharov, Vassily S.; Zakharov, Sergey V.; O’Reilly, Fergal

    2016-06-01

    Extreme ultraviolet (EUV) light generation by hybrid laser-assisted vacuum arc discharge plasmas, utilizing Sn-coated rotating-disc-electrodes, was investigated. The discharge was initiated by localized ablation of the liquid tin coating of the cathode disc by a laser pulse. The laser pulse, at 1064 nm, was generated by Nd:YAG lasers with variable energy from 1 to 100 mJ per pulse. The impact of shortening the laser pulse from 7 ns to 170 ps on the EUV generation has been investigated in detail. The use of ps pulses resulted in an increase in emission of EUV radiation. With a fixed discharge energy of ~4 J, the EUV conversion efficiency tends to plateau at ~2.4  ±  0.25% for the ps laser pulses, while for the ns pulses, it saturates at ~1.7  ±  0.3%. Under similar discharge and laser energy conditions, operating the EUV source with the ps-triggering resulted also in narrower spectral profiles of the emission in comparison to ns-triggering. The results indicate an advantage in using ps-triggering in laser-assisted discharges to produce brighter plasmas required for applications such as metrology.

  9. Materials Modification with Intense Extreme Ultraviolet Pulses from a Compact Laser

    NASA Astrophysics Data System (ADS)

    Grisham, M. E.; Vaschenko, G.; Menoni, C. S.; Juha, L.; Bittner, M.; Pershyn, Yu. P.; Kondratenko, V. V.; Zubarev, E. N.; Vinogradov, A. V.; Artioukov, I. A.; Rocca, J. J.

    In summary, we have realized a series of experiments with a compact 46.9 nm wavelength laser that produces intense pulses of nanosecond duration to study the ablation behavior of metals, common polymers, and Sc/Si multilayers. The key ablation process in polymers is likely to be a radiolysis of the polymer chains by EUV photons, resulting in the formation of numerous small molecular fragments that are subsequently removed from the surface of the samples. The EUV ablation rates for different polymers were found to be almost material independent, ˜ 50 - 400 nm/pulse. In each material EUV irradiation was observed to leave smooth craters with well defined edges and without signs of thermal damage. No threshold behavior was detected in the EUV ablation of the polymers in the range of fluences used in the experiment. In contrast to polymers the irradiation damage in metals and in Sc/Si multilayers is thermal in nature. A damage threshold of 0.08 J/cm2 was measured in the multilayer mirror coatings deposited on Si or borosilicate glass substrates, compared with a measured value of 0.7 J/cm2 for bare Si substrates. These results are relevant to the use of these mirrors with newly developed high-power EUV laser sources and provide a benchmark for their further improvement. In combination, the experiments demonstrate that compact extreme ultraviolet lasers are new tools available for surface modification studies and patterning.

  10. Diagnosis of energy transport in iron buried layer targets using an extreme ultraviolet laser

    SciTech Connect

    Shahzad, M.; Culfa, O.; Rossall, A. K.; Tallents, G. J.; Wilson, L. A.; Guilbaud, O.; Kazamias, S.; Delmas, O.; Demailly, J.; Maitrallain, A.; Pittman, M.; Baynard, E.; Farjardo, M.

    2015-02-15

    We demonstrate the use of extreme ultra-violet (EUV) laboratory lasers in probing energy transport in laser irradiated solid targets. EUV transmission through targets containing a thin layer of iron (50 nm) encased in plastic (CH) after irradiation by a short pulse (35 fs) laser focussed to irradiances 3 × 10{sup 16} Wcm{sup −2} is measured. Heating of the iron layer gives rise to a rapid decrease in EUV opacity and an increase in the transmission of the 13.9 nm laser radiation as the iron ionizes to Fe{sup 5+} and above where the ion ionisation energy is greater than the EUV probe photon energy (89 eV). A one dimensional hydrodynamic fluid code HYADES has been used to simulate the temporal variation in EUV transmission (wavelength 13.9 nm) using IMP opacity values for the iron layer and the simulated transmissions are compared to measured transmission values. When a deliberate pre-pulse is used to preform an expanding plastic plasma, it is found that radiation is important in the heating of the iron layer while for pre-pulse free irradiation, radiation transport is not significant.

  11. Extreme-ultraviolet collector mirror measurement using large reflectometer at NewSUBARU synchrotron facility

    NASA Astrophysics Data System (ADS)

    Iguchi, Haruki; Hashimoto, Hiraku; Kuki, Masaki; Harada, Tetsuo; Kinoshita, Hiroo; Watanabe, Takeo; Platonov, Yuriy Y.; Kriese, Michael D.; Rodriguez, Jim R.

    2016-06-01

    In extreme-ultraviolet (EUV) lithography, the development of high-power EUV sources is one of the critical issues. The EUV output power directly depends on the collector mirror performance. Furthermore, mirrors with large diameters are necessary to achieve high collecting performance and take sufficient distance to prevent heat and debris from a radiation point of the source. Thus collector mirror development with accurate reflectometer is important. We have developed a large reflectometer at BL-10 beamline of the NewSUBARU synchrotron facility that can be used for mirrors with diameters, thicknesses, and weights of up to 800 mm, 250 mm, and 50 kg, respectively. This reflectometer can measure reflectivity with fully s-polarized EUV light. In this study, we measured the reflectance of a 412-mm-diameter EUV collector mirror using a maximum incident angle of 36°. We obtained the peak reflectance, center wavelength and reflection bandwidth results and compared our results with Physikalisch-Technische Bundesanstalt results.

  12. The composition and structure of white dwarf atmospheres revealed by extreme ultraviolet spectroscopy

    NASA Technical Reports Server (NTRS)

    Barstow, Martin A.; Hubeny, Ivan; Lanz, Thierry; Holberg, Jay B.; Sion, Edward M.

    1995-01-01

    The ROentgen SATellite (ROSAT) and Extreme UltraViolet Explorer (EUVE) all-sky surveys have resulted in an important change in our understanding of the general composition of hydrogen-rich DA white dwarf atmospheres, with the photospheric opacity dominated by heavy elements rather than helium in the hottest stars (T > 40, 000 K). Most stars cooler than 40,000 K have more or less pure H atmospheres. However, one question, which has not been resolved, concerned the specific nature of the heavy elements and the role of helium in the hottest white dwarfs. One view of white dwarf evolution requires that H-rich DA stars form by gravitational settling of He from either DAO or He-rich central stars of planetary nebulae. In this case, the youngest (hottest) DA white dwarfs may still contain visible traces of He. Spectroscopic observations now available with EUVE provide a crucial test of these ideas. Analysis of data from the EUVE Guest Observer programme and EUVE public archive allows quantitative consideration of the sources of EUV opacity and places limits on the abundance of He which may be present.

  13. A Solar Type II Radio Burst from Coronal Mass Ejection-Coronal Ray Interaction: Simultaneous Radio and Extreme Ultraviolet Imaging

    NASA Astrophysics Data System (ADS)

    Chen, Yao; Du, Guohui; Feng, Li; Feng, Shiwei; Kong, Xiangliang; Guo, Fan; Wang, Bing; Li, Gang

    2014-05-01

    Simultaneous radio and extreme ultraviolet (EUV)/white-light imaging data are examined for a solar type II radio burst occurring on 2010 March 18 to deduce its source location. Using a bow-shock model, we reconstruct the three-dimensional EUV wave front (presumably the type-II-emitting shock) based on the imaging data of the two Solar TErrestrial RElations Observatory spacecraft. It is then combined with the Nançay radio imaging data to infer the three-dimensional position of the type II source. It is found that the type II source coincides with the interface between the coronal mass ejection (CME) EUV wave front and a nearby coronal ray structure, providing evidence that the type II emission is physically related to the CME-ray interaction. This result, consistent with those of previous studies, is based on simultaneous radio and EUV imaging data for the first time.

  14. Materials Properties and Solvated Electron Dynamics of Isolated Nanoparticles and Nanodroplets Probed with Ultrafast Extreme Ultraviolet Beams.

    PubMed

    Ellis, Jennifer L; Hickstein, Daniel D; Xiong, Wei; Dollar, Franklin; Palm, Brett B; Keister, K Ellen; Dorney, Kevin M; Ding, Chengyuan; Fan, Tingting; Wilker, Molly B; Schnitzenbaumer, Kyle J; Dukovic, Gordana; Jimenez, Jose L; Kapteyn, Henry C; Murnane, Margaret M

    2016-02-18

    We present ultrafast photoemission measurements of isolated nanoparticles in vacuum using extreme ultraviolet (EUV) light produced through high harmonic generation. Surface-selective static EUV photoemission measurements were performed on nanoparticles with a wide array of compositions, ranging from ionic crystals to nanodroplets of organic material. We find that the total photoelectron yield varies greatly with nanoparticle composition and provides insight into material properties such as the electron mean free path and effective mass. Additionally, we conduct time-resolved photoelectron yield measurements of isolated oleylamine nanodroplets, observing that EUV photons can create solvated electrons in liquid nanodroplets. Using photoemission from a time-delayed 790 nm pulse, we observe that a solvated electron is produced in an excited state and subsequently relaxes to its ground state with a lifetime of 151 ± 31 fs. This work demonstrates that femotosecond EUV photoemission is a versatile surface-sensitive probe of the properties and ultrafast dynamics of isolated nanoparticles. PMID:26807653

  15. Effects of the dynamics of droplet-based laser-produced plasma on angular extreme ultraviolet emission profile

    SciTech Connect

    Giovannini, Andrea Z.; Abhari, Reza S.

    2014-05-12

    The emission distribution of extreme ultraviolet (EUV) radiation from droplet targets is dependent on the dynamics of the laser-produced plasma. The EUV emission is measured on a 2% bandwidth centered at 13.5 nm (in-band). The targets of the laser are small (sub-50 μm) tin droplets, and the in-band emission distribution is measured for different laser irradiances and droplet sizes at various angular positions. Larger droplets lead to a faster decay of EUV emission at larger angles with respect to the laser axis. A decrease in laser irradiance has the opposite effect. The measurements are used together with an analytical model to estimate plume dynamics. Additionally, the model is used to estimate EUV emission distribution for a desired droplet diameter and laser irradiance.

  16. A solar type II radio burst from coronal mass ejection-coronal ray interaction: Simultaneous radio and extreme ultraviolet imaging

    SciTech Connect

    Chen, Yao; Du, Guohui; Feng, Shiwei; Kong, Xiangliang; Wang, Bing; Feng, Li; Guo, Fan; Li, Gang

    2014-05-20

    Simultaneous radio and extreme ultraviolet (EUV)/white-light imaging data are examined for a solar type II radio burst occurring on 2010 March 18 to deduce its source location. Using a bow-shock model, we reconstruct the three-dimensional EUV wave front (presumably the type-II-emitting shock) based on the imaging data of the two Solar TErrestrial RElations Observatory spacecraft. It is then combined with the Nançay radio imaging data to infer the three-dimensional position of the type II source. It is found that the type II source coincides with the interface between the coronal mass ejection (CME) EUV wave front and a nearby coronal ray structure, providing evidence that the type II emission is physically related to the CME-ray interaction. This result, consistent with those of previous studies, is based on simultaneous radio and EUV imaging data for the first time.

  17. Geocentric position preliminary detection from the extreme ultraviolet images of Chang'E-3

    NASA Astrophysics Data System (ADS)

    Zheng, Chen; Ping, Jinsong; Wang, Mingyuan; Li, Wenxiao

    2015-08-01

    An Extreme ultraviolet (EUV) Camera was installed onboard the Chinese lunar surface landing mission, the Chang'E-3 lander, as a useful method to observe the Earth plasmasphere. This EUV optical payload obtained more than 600 moon-based Earth plasmasphere images since December 14, 2013. However, due to errors of unknown size and origin in the platform attitude control of the lander and in the EUV telescope pointing control during the mission operating periods, the geocentric coordinates in these EUV images are not fixed in the same position of CCD pixel. Before adequately calibrating, these positioning offsets will introduce extra errors into the analysis of the plasmaspheric structure. With only a little insufficient telemetry information, an effective calibrating method of circle-based differential algorithm is suggested and demonstrated, for automatically and precisely detecting the geocentric position in each EUV image of Chang'E-3 mission. In each EUV image, the tested method uses the outline of a circle as the basic unit to capture the contour for the bright region based on the spectral characteristic. Then, the center of the extracted circle is adopted as the geocentric position for the image. The preliminary analysis shows that this method can effectively detect the geocentric position being always consistent with the recognition result by the basic hand labor method. It is found that the radius of the circles varies from month to month from December, 2013 to May, 2014. The monthly averages of radius show relative notable positive correlation and negative correlation with the changes of both Zenith angle of the Earth at the landing area of Chang'E-3 lander, and the Earth-moon distance, respectively. This method and results here will benefit the Chang'E-3 EUV study.

  18. The extreme ultraviolet spectra of low-redshift radio-loud quasars

    NASA Astrophysics Data System (ADS)

    Punsly, Brian; Reynolds, Cormac; Marziani, Paola; O'Dea, Christopher P.

    2016-07-01

    This paper reports on the extreme ultraviolet (EUV) spectrum of three low-redshift (z ˜ 0.6) radio-loud quasars, 3C 95, 3C 57 and PKS 0405-123. The spectra were obtained with the Cosmic Origins Spectrograph of the Hubble Space Telescope. The bolometric thermal emission, Lbol, associated with the accretion flow is a large fraction of the Eddington limit for all of these sources. We estimate the long-term time-averaged jet power, overline{Q}, for the three sources. overline{Q}/L_{bol}, is shown to lie along the correlation of overline{Q}/L_{bol}, and αEUV found in previous studies of the EUV continuum of intermediate and high-redshift quasars, where the EUV continuum flux density between 1100 and 700 Å is defined by F_{ν } ˜ ν ^{-α _{EUV}}. The high Eddington ratios of the three quasars extend the analysis into a wider parameter space. Selecting quasars with high Eddington ratios has accentuated the statistical significance of the partial correlation analysis of the data. Namely, the correlation of overline{Q}/L_{bol} and αEUV is fundamental, and the correlation of overline{Q} and αEUV is spurious at a very high statistical significance level (99.8 per cent). This supports the regulating role of ram pressure of the accretion flow in magnetically arrested accretion models of jet production. In the process of this study, we use multifrequency and multiresolution Very Large Array radio observations to determine that one of the bipolar jets in 3C 57 is likely frustrated by galactic gas that keeps the jet from propagating outside the host galaxy.

  19. Four wave mixing experiments with extreme ultraviolet transient gratings

    PubMed Central

    Bencivenga, F.; Cucini, R.; Capotondi, F.; Battistoni, A.; Mincigrucci, R.; Giangrisostomi, E.; Gessini, A.; Manfredda, M.; Nikolov, I. P.; Pedersoli, E.; Principi, E.; Svetina, C.; Parisse, P.; Casolari, F.; Danailov, M. B.; Kiskinova, M.; Masciovecchio, C.

    2015-01-01

    Four wave mixing (FWM) processes, based on third-order non-linear light-matter interactions, can combine ultrafast time resolution with energy and wavevector selectivity, and enables to explore dynamics inaccessible by linear methods.1-7 The coherent and multi-wave nature of FWM approach has been crucial in the development of cutting edge technologies, such as silicon photonics,8 sub-wavelength imaging9 and quantum communications.10 All these technologies operate with optical wavelengths, which limit the spatial resolution and do not allow probing excitations with energy in the eV range. The extension to shorter wavelengths, that is the extreme ultraviolet (EUV) and soft-x-ray (SXR) range, will allow to improve the spatial resolution and to expand the excitation energy range, as well as to achieve elemental selectivity by exploiting core resonances.5-7,11-14 So far FWM applications at these wavelengths have been prevented by the absence of coherent sources of sufficient brightness and suitable experimental setups. Our results show how transient gratings, generated by the interference of coherent EUV pulses delivered by the FERMI free electron laser (FEL),15 can be used to stimulate FWM processes at sub-optical wavelengths. Furthermore, we have demonstrated the possibility to read the time evolution of the FWM signal, which embodies the dynamics of coherent excitations as molecular vibrations. This result opens the perspective for FWM with nanometer spatial resolution and elemental selectivity, which, for example, would enable the investigation of charge-transfer dynamics.5-7 The theoretical possibility to realize these applications have already stimulated dedicated and ongoing FEL developments;16-20 today our results show that FWM at sub-optical wavelengths is feasible and would be the spark to the further advancements of the present and new sources. PMID:25855456

  20. Solar extreme ultraviolet sensor and advanced langmuir probe

    NASA Technical Reports Server (NTRS)

    Voronka, N. R.; Block, B. P.; Carignan, G. R.

    1992-01-01

    For more than two decades, the staff of the Space Physics Research Laboratory (SPRL) has collaborated with the Goddard Space Flight Center (GSFC) in the design and implementation of Langmuir probes (LP). This program of probe development under the direction of Larry Brace of GSFC has evolved methodically with innovations to: improve measurement precision, increase the speed of measurement, and reduce the weight, size, power consumption and data rate of the instrument. Under contract NAG5-419 these improvements were implemented and are what characterize the Advanced Langmuir Probe (ALP). Using data from the Langmuir Probe on the Pioneer Venus Orbiter, Brace and Walter Hoegy of GSFC demonstrated a novel method of monitoring the solar extreme ultraviolet (EUV) flux. This led to the idea of developing a sensor similar to a Langmuir probe specifically designed to measure solar EUV (SEUV) that uses a similar electronics package. Under this contract, a combined instrument package of the ALP and SEUV sensor was to be designed, constructed, and laboratory tested. Finally the instrument was to be flight tested as part of sounding rocket experiment to acquire the necessary data to validate this method for possible use in future earth and planetary aeronomy missions. The primary purpose of this contract was to develop the electronics hardware and software for this instrument, since the actual sensors were suppied by GSFC. Due to budget constraints, only a flight model was constructed. These electronics were tested and calibrated in the laboratory, and then the instrument was integrated into the rocket payload at Wallops Flight Facility where it underwent environmental testing. After instrument recalibration at SPRL, the payload was reintegrated and launched from the Poker Flat Research Range near Fairbanks Alaska. The payload was successfully recovered and after refurbishment underwent further testing and developing to improve its performance for future use.

  1. Extreme Ultraviolet Emission Lines of Iron Fe XI-XIII

    NASA Astrophysics Data System (ADS)

    Lepson, Jaan; Beiersdorfer, P.; Brown, G. V.; Liedahl, D. A.; Brickhouse, N. S.; Dupree, A. K.

    2013-04-01

    The extreme ultraviolet (EUV) spectral region (ca. 20--300 Å) is rich in emission lines from low- to mid-Z ions, particularly from the middle charge states of iron. Many of these emission lines are important diagnostics for astrophysical plasmas, providing information on properties such as elemental abundance, temperature, density, and even magnetic field strength. In recent years, strides have been made to understand the complexity of the atomic levels of the ions that emit the lines that contribute to the richness of the EUV region. Laboratory measurements have been made to verify and benchmark the lines. Here, we present laboratory measurements of Fe XI, Fe XII, and Fe XIII between 40-140 Å. The measurements were made at the Lawrence Livermore electron beam ion trap (EBIT) facility, which has been optimized for laboratory astrophysics, and which allows us to select specific charge states of iron to help line identification. We also present new calculations by the Hebrew University - Lawrence Livermore Atomic Code (HULLAC), which we also utilized for line identification. We found that HULLAC does a creditable job of reproducing the forest of lines we observed in the EBIT spectra, although line positions are in need of adjustment, and line intensities often differed from those observed. We identify or confirm a number of new lines for these charge states. This work was supported by the NASA Solar and Heliospheric Program under Contract NNH10AN31I and the DOE General Plasma Science program. Work was performed in part under the auspices of the Department of Energy by Lawrence Livermore National Laboratory under Contract DEAC52-07NA27344.

  2. Time-resolved pinhole camera imaging and extreme ultraviolet spectrometry on a hollow cathode discharge in xenon.

    PubMed

    Kieft, E R; van der Mullen, J J A M; Kroesen, G M W; Banine, V

    2003-11-01

    A pinhole camera, an extreme ultraviolet (EUV) spectrometer, a fast gatable multichannel plate EUV detector, and a digital camera have been installed on the ASML EUV laboratory setup to perform time-resolved pinhole imaging and EUV spectroscopy on a copy of the Philips EUV hollow cathode discharge plasma source. The main properties of the setup have been characterized. Time-resolved measurements within the plasma pulse in the EUV have been performed on this source. Specific features of the plasma, such as a ring shape in the initiation phase and a propagating sphere during the pinch phase, have either been discovered or confirmed experimentally. Relative populations of various ionization stages in the pinch plasma have been estimated on the basis of line intensities and calculated transition probabilities. The changes in relative line intensities of a single ionization stage can be explained by a combination of temperature and excitation/deexcitation balance effects. Experiments with argon dilution on a newer version of the source show considerable effect on the shape of the xenon EUV spectrum.

  3. Low-defect reflective mask blanks for extreme ultraviolet lithography

    SciTech Connect

    Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Walton, C; Ray-Chaudhuri, A

    1999-03-11

    Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA roadmap well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm² @ 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm² for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm² in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10-2/cm² level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling.

  4. EXTREME ULTRAVIOLET EXPLORER OBSERVATIONS OF HERCULES X-1 OVER A 35 DAY CYCLE

    SciTech Connect

    Leahy, D. A.; Dupuis, Jean

    2010-06-01

    Observations of Hercules X-1 by the Extreme Ultraviolet Explorer covering most of the 35 day cycle are reported here. This is the only long extreme ultraviolet (EUV) observation of Her X-1. Simultaneous X-ray observations with the Rossi X-ray Timing Explorer All-Sky Monitor (RXTE/ASM) X-ray show that Her X-1 is in an X-ray anomalous low state. The first 4 days are also observed with the RXTE proportional counter array (PCA), which shows that the X-ray properties are nearly the same as for normal low states in Her X-1 with flux reduced by a factor of 2. In contrast, the EUV emission from Her X-1 is reduced by a factor of {approx}4 compared to normal low states. The twisted-tilted accretion disk responsible for the normal 35 day X-ray cycle can be modified to explain this behavior. An increased disk twist reduces the X-ray illumination of HZ Her by a factor of {approx}2 and of the disk surface by a somewhat larger factor, leading to a larger reduction in EUV flux compared to X-ray flux.

  5. Detection of rotational modulation in the coronal extreme-ultraviolet emission from V711 Tauri?

    PubMed

    Drake, J J; Brown, A; Patterer, R J; Vedder, P W; Bowyer, S; Guinan, E F

    1994-01-20

    The RS CVn binary V711 Tauri was observed by the Extreme Ultraviolet Explorer satellite (EUVE) twice during the latter half of 1992, for periods lasting several days. Light curves for the waveband 60-180 angstroms derived from the all-sky survey scanning in August and from a pointed calibration observation made in October both exhibit a modulation of about 40%. The modulation in both data sets is very similar, with minimum flux occurring near orbital phase phi=0.5. Analysis using a two-temperature optically thin plasma emission model reveals that most of the detected extreme ultraviolet (EUV) flux emanates from hot (approximately 10(7) K) coronal plasma. The modulation is probably mostly due to either flare-like activity or to rotational occultation of a long-lived, compact, and especially bright coronal structure on the more active star of the system. The phased data support the latter hypothesis. This coronal structure is then likely to be associated with the persistent spot patterns seen on V711 Tau when using Doppler and photometric surface imaging techniques. Comparison with contemporaneous Stromgren b-band photometry indicates that the optical minimum light leads the EUV maximum light by 90 degrees in phase.

  6. Lifetime studies of Mo/Si and Mo/Be multilayer coatings for extreme ultraviolet lithography

    SciTech Connect

    Bajt, S; Clift, W M; Folta, J A; Gullikson, E M; Klebanoff, L E; Kleineberg, U; Malinowski, M E; Wedowski, M

    1999-08-05

    Extreme Ultraviolet Lithography (EUVL) is a candidate for future application by the semiconductor industry in the production of sub-100 nm feature sizes in integrated circuits. Using multilayer reflective coatings optimized at wavelengths ranging from 11 to 14 nm, EUVL represents a potential successor to currently existing optical lithography techniques. In order to assess lifetimes of the multilayer coatings under realistic conditions, a series of radiation stability tests has been performed. In each run a dose of EUV radiation equivalent to several months of lithographic operation was applied to Mo/Si and MO/Be multilayer coatings within a few days. Depending on the residual gas concentration in the vacuum environment, surface deposition of carbon during the exposure lead to losses in the multilayer reflectivity. However, in none of the experimental runs was structural damage within the bulk of the multilayers observed. Mo/Si multilayer coatings recovered their full original reflectivity after removal of the carbon layer by an ozone cleaning method. Auger depth profiling on MO/Be multilayers indicate that carbon penetrated into the Be top layer during illumination with high doses of EUV radiation. Subsequent ozone cleaning fully removed the carbon, but revealed enhanced oxidation of the area illuminated, which led to an irreversible loss in reflectance on the order of 1%. Keywords: Extreme ultraviolet (EUV) lithography, multilayer reflective coatings, radiation stability, surface contamination

  7. EUV Resists: Illuminating the challenges

    SciTech Connect

    Naulleau, Patrick; Anderson, Christopher; George, Simi

    2011-06-01

    As extreme ultraviolet (EUV) lithography enters the commercialization phase with potential introduction at the 3x nm half-pitch node in 2013, the attention of advanced EUV resist research has turned to addressing patterning at 16-nm half pitch and below. Whereas line-edge roughness is the primary concern at 2x half pitch and larger, research at the 16-nm half pitch level is uncovering broader.

  8. Instrumentation development for the EUVE. [Extreme Ultraviolet Explorer Satellite

    NASA Technical Reports Server (NTRS)

    Finley, D.

    1980-01-01

    The prototype mirror was successfully replated with a thick layer of nickel and diamond turned again. Optimization of the sensitivity of the instruments was studied with emphasis on the filter material, and on the available telemetry. The JHU Preliminary Project Definition Document was critically analyzed. Further studies of the electron cloud distribution produced by a channel plate were performed, and a wedge and strip anode with 17 quartets per inch was shown to image with better than 0.5% linearity. Half the microchannel plates being used in the lifetest completed initial processing and are in the lifetest vacuum chamber.

  9. Extreme-Ultraviolet Flux from the Virgo Cluster: Further Evidence for a 500,000-Kelvin Component

    PubMed

    Bowyer; Lampton; Lieu

    1996-11-22

    A surprising discovery in x-ray astronomy was that clusters of galaxies often contain vast quantities of hot (20 million kelvin) diffuse gas. Substantial diffuse extreme-ultraviolet (EUV) emission has recently been detected in the Virgo cluster of galaxies. Depending on the character of the interstellar medium in our galaxy, this emission could be either an aspect of the hot cluster gas or a previously undetected 500,000-kelvin component. Analysis of the observational data in combination with our current knowledge of the interstellar medium revealed that the EUV flux cannot be an effect of the interstellar medium. Hence, a warm cluster component appears likely.

  10. Experimental limits of the extreme ultraviolet background

    NASA Technical Reports Server (NTRS)

    Wulf-Mathies, C.; Grewing, M.; Kraemer, G.; Schulz-Luepertz, E.; Kimble, R.; Bixler, J.; Bowyer, S.

    1983-01-01

    Photometric observations of the diffuse extreme ultraviolet background with two photometers having bandpasses of 750-940 A and 1040-1080 A are reported. The payload, which was flown aboard an ARIES sounding rocket in June 1982, is described, including the electron detectors, filters, and calibration. The operation of the probe during the experiment, including its motions, are described. The primary experiment involved spectroscopic observation of the hot white dwarf HZ43. The photometer count rate is shown and the measurements of the diffuse background are compared with theoretical predictions. Despite the lower limits obtained using a narrowband detector, the measurements are not sensitive enough to draw any relevant astrophysical conclusions.

  11. Overlying extreme-ultraviolet arcades preventing eruption of a filament observed by AIA/SDO

    SciTech Connect

    Chen, Huadong; Ma, Suli; Zhang, Jun

    2013-11-20

    Using the multi-wavelength data from the Atmospheric Imaging Assembly/Solar Dynamic Observatory (AIA/SDO) and the Sun Earth Connection Coronal and Heliospheric Investigation/Solar Terrestrial Relations Observatory (SECCHI/STEREO), we report a failed filament eruption in NOAA AR 11339 on 2011 November 3. The eruption was associated with an X1.9 flare, but without any coronal mass ejection (CME), coronal dimming, or extreme ultraviolet (EUV) waves. Some magnetic arcades above the filament were observed distinctly in EUV channels, especially in the AIA 94 Å and 131 Å wavebands, before and during the filament eruption process. Our results show that the overlying arcades expanded along with the ascent of the filament at first until they reached a projected height of about 49 Mm above the Sun's surface, where they stopped. The following filament material was observed to be confined by the stopped EUV arcades and not to escape from the Sun. After the flare, a new filament formed at the low corona where part of the former filament remained before its eruption. These results support that the overlying arcades play an important role in preventing the filament from successfully erupting outward. We also discuss in this paper the EUV emission of the overlying arcades during the flare. It is rare for a failed filament eruption to be associated with an X1.9 class flare, but not with a CME or EUV waves. Therefore, this study also provides valuable insight into the triggering mechanism of the initiation of CMEs and EUV waves.

  12. A chain of winking (oscillating) filaments triggered by an invisible extreme-ultraviolet wave

    SciTech Connect

    Shen, Yuandeng; Tian, Zhanjun; Zhao, Ruijuan; Ichimoto, Kiyoshi; Ishii, Takako T.; Shibata, Kazunari

    2014-05-10

    Winking (oscillating) filaments have been observed for many years. However, observations of successive winking filaments in one event have not yet been reported. In this paper, we present the observations of a chain of winking filaments and a subsequent jet that are observed right after the X2.1 flare in AR11283. The event also produced an extreme-ultraviolet (EUV) wave that has two components: an upward dome-like wave (850 km s{sup –1}) and a lateral surface wave (554 km s{sup –1}) that was very weak (or invisible) in imaging observations. By analyzing the temporal and spatial relationships between the oscillating filaments and the EUV waves, we propose that all the winking filaments and the jet were triggered by the weak (or invisible) lateral surface EUV wave. The oscillation of the filaments last for two or three cycles, and their periods, Doppler velocity amplitudes, and damping times are 11-22 minutes, 6-14 km s{sup –1}, and 25-60 minutes, respectively. We further estimate the radial component magnetic field and the maximum kinetic energy of the filaments, and they are 5-10 G and ∼10{sup 19} J, respectively. The estimated maximum kinetic energy is comparable to the minimum energy of ordinary EUV waves, suggesting that EUV waves can efficiently launch filament oscillations on their path. Based on our analysis results, we conclude that the EUV wave is a good agent for triggering and connecting successive but separated solar activities in the solar atmosphere, and it is also important for producing solar sympathetic eruptions.

  13. Combined microscopies study of the C-contamination induced by extreme-ultraviolet radiation: A surface-dependent secondary-electron-based model

    NASA Astrophysics Data System (ADS)

    Prezioso, S.; Donarelli, M.; Bisti, F.; Palladino, L.; Santucci, S.; Spadoni, S.; Avaro, L.; Liscio, A.; Palermo, V.; Ottaviano, L.

    2012-05-01

    SiO2 and Al2O3 surfaces exposed to periodically modulated extreme ultraviolet (EUV) light (λ = 46.9 nm) have been investigated at the μm scale by optical microscopy, scanning electron microscopy, scanning Auger microscopy, atomic force microscopy, and Kelvin probe force microscopy. The formation of a carbon contamination layer preserving the same periodical modulation of the EUV dose has been observed. The mechanisms of hydrocarbon molecules deposition have been studied with the help of correlation plots between the modulated Auger signal and the corresponding EUV dose. A surface-dependent secondary-electron-based model has been proposed.

  14. Combined microscopies study of the C-contamination induced by extreme-ultraviolet radiation: A surface-dependent secondary-electron-based model

    SciTech Connect

    Prezioso, S.; Donarelli, M.; Bisti, F.; Palladino, L.; Santucci, S.; Ottaviano, L.; Spadoni, S.; Avaro, L.; Liscio, A.; Palermo, V.

    2012-05-14

    SiO{sub 2} and Al{sub 2}O{sub 3} surfaces exposed to periodically modulated extreme ultraviolet (EUV) light ({lambda} = 46.9 nm) have been investigated at the {mu}m scale by optical microscopy, scanning electron microscopy, scanning Auger microscopy, atomic force microscopy, and Kelvin probe force microscopy. The formation of a carbon contamination layer preserving the same periodical modulation of the EUV dose has been observed. The mechanisms of hydrocarbon molecules deposition have been studied with the help of correlation plots between the modulated Auger signal and the corresponding EUV dose. A surface-dependent secondary-electron-based model has been proposed.

  15. Extreme and far ultraviolet astronomy from Voyagers 1 and 2

    NASA Technical Reports Server (NTRS)

    Holberg, J. B.

    1990-01-01

    The instrumental characteristics, observational capabilities and scientific results of the Voyager 1 and 2 ultraviolet spectrometers are reviewed. These instruments provide current and ongoing access to low resolution spectra for a wide variety of astronomical sources in the 500 to 1700 A band. Observations of the brightest OB stars and hot subluminous stars as faint as V = 15 mag, are possible. In the EUV, at wavelengths shortward of 900 A, several new sources have been detected and a host of potential sources ruled out. In the far UV, particularly at wavelengths between 900 and 1200 A, Voyager is capable of observing a wide range of stellar and non-stellar sources. Such observations can often provide a valuable complement to IUE and other data sets at longer wavelengths. The Voyager spectrometers have proved remarkably stable photon counting instruments, capable of extremely long integration times. The long integration times, relatively large field of view, and location in the outer solar system also provide an ideal platform for observations of sources of faint diffuse emission, such as nebulae and the general sky background.

  16. Smoothing of Diamond-Turned Substrates for Extreme Ultraviolet Illuminators

    SciTech Connect

    Soufli, R; Spiller, E; Schmidt, M A; Robinson, J C; Baker, S L; Ratti, S; Johnson, M A; Gullikson, E M

    2003-11-13

    Condenser optics in extreme ultraviolet lithography (EUVL) systems are subjected to frequent replacement as they are positioned close to the illumination source, where increased heating and contamination occur. In the case of aspherical condenser elements made by optical figuring/finishing, their replacement can be very expensive (several hundred thousand dollars). One approach to this problem would be to manufacture inexpensive illuminator optics that meet all required specifications and could be replaced at no substantial cost. Diamond-turned metal substrates are a factor of 100 less expensive than conventional aspherical substrates but have insufficient finish, leading to unacceptably low EUV reflectance after multilayer coating. In this work it is shown that, by applying a smoothing film prior to multilayer coating, the high spatial frequency roughness of a diamond-turned metal substrate is reduced from 1.76 to 0.27 nm rms while the figure slope error is maintained at acceptable levels. Metrology tests performed at various stages of the fabrication of the element demonstrated that it satisfied all critical figure and finish specifications as illuminator. Initial experimental results on the stability and performance of the optic under a real EUVL plasma source environment show no accelerated degradation when compared to conventional substrates.

  17. Extreme-ultraviolet polarimeter utilizing laser-generated high-order harmonics.

    PubMed

    Brimhall, Nicole; Turner, Matthew; Herrick, Nicholas; Allred, David D; Turley, R Steven; Ware, Michael; Peatross, Justin

    2008-10-01

    We describe an extreme-ultraviolet (EUV) polarimeter that employs laser-generated high-order harmonics as the light source. The polarimeter is designed to characterize materials and thin films for use with EUV light. Laser high harmonics are highly directional with easily rotatable linear polarization, not typically available with other EUV sources. The harmonics have good wavelength coverage, potentially spanning the entire EUV from a few to a hundred nanometers. Our instrument is configured to measure reflectances from 14 to 30 nm and has approximately 180 spectral resolution (lambda/Delta lambda). The reflection from a sample surface can be measured over a continuous range of incident angles (5 degrees-75 degrees). A secondary 14 cm gas cell attenuates the harmonics in a controlled way to keep signals within the linear dynamic range of the detector, comprised of a microchannel plate coupled to a phosphorous screen and charge coupled device camera. The harmonics are produced using approximately 10 mJ, approximately 35 fs, and approximately 800 nm laser pulses with a repetition rate of 10 Hz. Per-shot energy monitoring of the laser discriminates against fluctuations. The polarimeter reflectance data agree well with data obtained at the Advanced Light Source Synchrotron (Beamline 6.3.2).

  18. STUDY OF SOLAR ENERGETIC PARTICLE ASSOCIATIONS WITH CORONAL EXTREME-ULTRAVIOLET WAVES

    SciTech Connect

    Park, Jinhye; Moon, Y.-J.; Innes, D. E.; Bucik, R.; Kahler, S. W.

    2015-07-20

    We study the relationship between large gradual solar energetic particle (SEP) events and associated extreme-ultraviolet (EUV) wave properties in 16 events that occurred between 2010 August and 2013 May and were observed by SDO, the Solar and Heliospheric Observatory (SOHO), and/or STEREO. We determine onset times, peak times, and peak fluxes of the SEP events in the SOHO/ERNE and STEREO/LET proton channels (6–10 MeV). The EUV wave arrival times and their speeds from the source sites to the spacecraft footpoints in the photosphere, which are magnetically connected to the spacecraft by Parker spiral and potential fields, are determined by spacetime plots from the full-Sun heliographic images created by combining STEREO-A and STEREO-B 195 Å and SDO 193 Å images. The SEP peak fluxes increase with the EUV wave speeds, and the SEP spectral indices become harder with the speeds. This shows that higher energetic particle fluxes are associated with faster EUV waves, which are considered as the lateral expansions of coronal-mass-ejection-driven shocks in the low corona.

  19. Thermalization of electrons in decaying extreme ultraviolet photons induced low pressure argon plasma

    NASA Astrophysics Data System (ADS)

    Beckers, J.; van der Horst, R. M.; Osorio, E. A.; Kroesen, G. M. W.; Banine, V. Y.

    2016-06-01

    We monitored—in the pressure range: 0.5–15 Pa—the electron temperature in decaying plasmas induced in argon gas by pulsed irradiation with extreme ultraviolet (EUV) photons with wavelengths closely around 13.5 nm. For this purpose, temporal measurements of the space-averaged and electric field weighted electron density after pulsed EUV irradiation are combined with an ambipolar diffusion model of the plasma. Results demonstrate that electrons are thermalized to room temperature before the plasma has fully expanded to the chamber walls for pressures of 3 Pa and higher. At pressures below 3 Pa, the electron temperature was found to be up to 0.1 eV above room temperature which is explained by the fact that plasma expansion is too quick for the electrons to fully thermalize. The comparison between plasma expansion duration towards a surface, plasma decay at a surface and time needed for thermalization and cooling of electrons is essential for designers of EUV lithography tools and EUV sources since the temperature of electrons dictates many fundamental physical processes.

  20. At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

    SciTech Connect

    Naulleau, Patrick; Goldberg, Kenneth A.; Anderson, Erik H.; Batson, Phillip; Denham, Paul E.; Jackson, Keith H.; Gullikson, Eric M.; Rekawa, Senajith; Bokor, Jeffrey

    2001-06-10

    At-wavelength interferometric characterization of a new 4x-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Set-2 optic. EUV characterization of the Set-2 optic is performed using the EUV phase-shifting point diffraction interferometer (PS/PDI) installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. This is the same interferometer previously used for the at-wavelength characterization and alignment of the ETS Set-1 optic. In addition to the PS/PDI-based full-field wavefront characterization, we also present wavefront measurements performed with lateral shearing interferometry, the chromatic dependence of the wavefront error, and the system-level pupil-dependent spectral-bandpass characteristics of the optic; the latter two properties are only measurable using at-wavelength interferometry.

  1. Study of Solar Energetic Particle Associations with Coronal Extreme-ultraviolet Waves

    NASA Astrophysics Data System (ADS)

    Park, Jinhye; Innes, D. E.; Bucik, R.; Moon, Y.-J.; Kahler, S. W.

    2015-07-01

    We study the relationship between large gradual solar energetic particle (SEP) events and associated extreme-ultraviolet (EUV) wave properties in 16 events that occurred between 2010 August and 2013 May and were observed by SDO, the Solar and Heliospheric Observatory (SOHO), and/or STEREO. We determine onset times, peak times, and peak fluxes of the SEP events in the SOHO/ERNE and STEREO/LET proton channels (6-10 MeV). The EUV wave arrival times and their speeds from the source sites to the spacecraft footpoints in the photosphere, which are magnetically connected to the spacecraft by Parker spiral and potential fields, are determined by spacetime plots from the full-Sun heliographic images created by combining STEREO-A and STEREO-B 195 Å and SDO 193 Å images. The SEP peak fluxes increase with the EUV wave speeds, and the SEP spectral indices become harder with the speeds. This shows that higher energetic particle fluxes are associated with faster EUV waves, which are considered as the lateral expansions of coronal-mass-ejection-driven shocks in the low corona.

  2. Considerations for a free-electron laser-based extreme-ultraviolet lithography program

    NASA Astrophysics Data System (ADS)

    Hosler, Erik R.; Wood, Obert R.; Barletta, William A.; Mangat, Pawitter J. S.; Preil, Moshe E.

    2015-03-01

    Recent years have seen great strides in the development of extreme ultraviolet (EUV) laser-produced plasma sources. Field deployed EUV exposure tools are now capable of facilitating advanced technology node development. Nevertheless, as the required manufacturing exposure dose scales, EUV sources must follow suit and provide 500- 1000 W to maintain production throughputs. A free-electron laser (FEL) offers a cost effective, single-source alternative for powering an entire EUV lithography program. FEL integration into semiconductor fab architecture will require both unique facility considerations as well as a paradigm shift in lithography operations. Critical accelerator configurations relating to energy recovery, multi-turn acceleration, and operational mode are discussed from engineering/scientific, cost-minimization, and safety perspectives. Furthermore, the individual components of a FEL (electron injector, RF systems, undulator, etc.) are examined with respect to both design and cost, considering existing technology as well as prospective innovations. Finally, FEL development and deployment roadmaps are presented, focusing on manufacturer deployment for the 5 nm or 3 nm technology nodes.[1-3

  3. Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks

    SciTech Connect

    Spector, S. J.; White, D. L.; Tennant, D. M.; Ocola, L. E.; Novembre, A. E.; Peabody, M. L.; Wood, O. R. II

    1999-11-01

    We have developed two new methods for at-wavelength inspection of mask blanks for extreme-ultraviolet (EUV) lithography. In one method an EUV photoresist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. In the second method, the photoresist is applied to an EUV transparent membrane that is placed in close proximity to the mask and then exposed and developed. Both reflectivity defects and phase defects alter the exposure of the resist, resulting in mounds of resist at defect sites that can then be located by visual inspection. In the direct application method, a higher contrast resist was shown to increase the height of the mounds, thereby improving the sensitivity of the technique. In the membrane method, a holographic technique was used to reconstruct an image of the mask, revealing the presence of very small defects, approximately 0.2 {mu}m in size. The demonstrated clean transfer of phase and amplitude defects to resist features on a membrane will be important when flagging defects in an automatic inspection tool. (c) 1999 American Vacuum Society.

  4. Enhancement of laser plasma extreme ultraviolet emission by shockwave-laser interaction

    SciTech Connect

    Bruijn, Rene de; Koshelev, Konstantin N.; Zakharov, Serguei V.; Novikov, Vladimir G.; Bijkerk, Fred

    2005-04-15

    A double laser pulse heating scheme has been applied to generate plasmas with enhanced emission in the extreme ultraviolet (EUV). The plasmas were produced by focusing two laser beams (prepulse and main pulse) with a small spatial separation between the foci on a xenon gas jet target. Prepulses with ps-duration were applied to obtain high shockwave densities, following indications of earlier published results obtained using ns prepulses. EUV intensities around 13.5 nm and in the range 5-20 nm were recorded, and a maximum increase in intensity exceeding 2 was measured at an optimal delay of 140 ns between prepulse and main pulse. The gain in intensity is explained by the interaction of the shockwave produced by the prepulse with the xenon in the beam waist of the main pulse. Extensive simulation was done using the radiative magnetohydrodynamic code Z{sup *}.

  5. Single spherical mirror optic for extreme ultraviolet lithography enabled by inverse lithography technology.

    PubMed

    Scranton, Gregg; Bhargava, Samarth; Ganapati, Vidya; Yablonovitch, Eli

    2014-10-20

    Traditionally, aberration correction in extreme ultraviolet (EUV) projection optics requires the use of multiple lossy mirrors, which results in prohibitively high source power requirements. We analyze a single spherical mirror projection optical system where aberration correction is built into the mask itself, through Inverse Lithography Technology (ILT). By having fewer mirrors, this would reduce the power requirements for EUV lithography. We model a single spherical mirror system with orders of magnitude more spherical aberration than would ever be tolerated in a traditional multiple mirror system. By using ILT, (implemented by an adjoint-based gradient descent optimization algorithm), we design photomasks that successfully print test patterns, in spite of these enormous aberrations. This mathematical method was tested with a 6 plane wave illumination source. Nonetheless, it would have poor power throughput from a totally incoherent source. PMID:25401536

  6. Note: Thermally stable thin-film filters for high-power extreme-ultraviolet applications.

    PubMed

    Tarrio, C; Berg, R F; Lucatorto, T B; Lairson, B; Lopez, H; Ayers, T

    2015-11-01

    We investigated several types of thin-film filters for high intensity work in the extreme-ultraviolet (EUV) spectral range. In our application, with a peak EUV intensity of 2.7 W cm(-2), Ni-mesh-backed Zr filters have a typical lifetime of 20 h, at which point they suffer from pinholes and a 50% loss of transmission. Initial trials with Si filters on Ni meshes resulted in rupture of the filters in less than an hour. A simple thermal calculation showed that the temperature rise in those filters to be about 634 K. A similar calculation indicated that using a finer mesh with thicker wires and made of Cu reduces the temperature increase to about 60 K. We have exposed a Si filter backed by such a mesh for more than 60 h with little loss of transmission and no leaks. PMID:26628184

  7. Recording oscillations of sub-micron size cantilevers by extreme ultraviolet Fourier transform holography.

    PubMed

    Monserud, Nils C; Malm, Erik B; Wachulak, Przemyslaw W; Putkaradze, Vakhtang; Balakrishnan, Ganesh; Chao, Weilun; Anderson, Erik; Carlton, David; Marconi, Mario C

    2014-02-24

    We recorded the fast oscillation of sub-micron cantilevers using time-resolved extreme ultraviolet (EUV) Fourier transform holography. A tabletop capillary discharge EUV laser with a wavelength of 46.9 nm provided a large flux of coherent illumination that was split using a Fresnel zone plate to generate the object and the reference beams. The reference wave was produced by the first order focus while a central opening in the zone plate provided a direct illumination of the cantilevers. Single-shot holograms allowed for the composition of a movie featuring the fast oscillation. Three-dimensional displacements of the object were determined as well by numerical back-propagation, or "refocusing" of the electromagnetic fields during the reconstruction of a single hologram. PMID:24663740

  8. Electron-Impact-Induced Emission Cross Sections of Neon in the Extreme Ultraviolet

    NASA Technical Reports Server (NTRS)

    Kanik, I.; Ajello, J. M.; James, G. K.

    1996-01-01

    We have measured the extreme ultraviolet (EUV) spectrum of neon produced by electron excitation. The measurements were obtained under optically thin conditions, and at a spectral resolution of 0.5 nm full width at half maximum (FWHM). The most prominent features of the EUV spectrum between 45-80 nm are the resonance lines of Ne I at 73.6 and 74.4 nm and a multiplet of Ne II at 46.14 nm (the average value for the line center of the two closely spaced ion lines at 46.07 and 46.22 nm). Absolute emission cross sections of these lines at 300 eV were measured and compared to other previous measurements.

  9. Fluorescence efficiency and visible re-emission spectrum of tetraphenyl butadiene films at extreme ultraviolet wavelengths

    NASA Astrophysics Data System (ADS)

    Gehman, V. M.; Seibert, S. R.; Rielage, K.; Hime, A.; Sun, Y.; Mei, D.-M.; Maassen, J.; Moore, D.

    2011-10-01

    A large number of current and future experiments in neutrino and dark matter detection use the scintillation light from noble elements as a mechanism for measuring energy deposition. The scintillation light from these elements is produced in the extreme ultraviolet (EUV) range, from 60 to 200 nm. Currently, the most practical technique for observing light at these wavelengths is to surround the scintillation volume with a thin film of tetraphenyl butadiene (TPB) to act as a fluor. The TPB film absorbs EUV photons and re-emits visible photons, detectable with a variety of commercial photosensors. Here we present a measurement of the re-emission spectrum of TPB films when illuminated with 128, 160, 175, and 250 nm light. We also measure the fluorescence efficiency as a function of incident wavelength from 120 to 250 nm.

  10. Minimization of the shadow patterns produced by periodic mesh grids in extreme ultraviolet telescopes.

    PubMed

    Auchère, Frédéric; Rizzi, Julien; Philippon, Anne; Rochus, Pierre

    2011-01-01

    Thin metallic films are used as passband filters in space telescopes operating in the extreme ultraviolet (EUV). Because of their thinness, typically 100 to 200 nm, they are very sensitive to static pressure differentials and to mechanic and acoustic vibrations. Therefore, they are difficult to manage in all phases of a space program, from manufacturing to vacuum testing to launch. A common solution to this problem is to reinforce them with fine mesh grids with pitches ranging from a few hundred micrometers to a few millimeters. Depending on their location in the optical path, the main effect of these periodic grids is either to diffract light or to cast penumbral shadows on the focal plane. In this paper, we analyze the formation of the shadow modulation patterns and derive design rules to minimize their amplitude. The minimization principle is illustrated by an application to a solar EUV telescope.

  11. Large-solid-angle illuminators for extreme ultraviolet lithography with laser plasmas

    SciTech Connect

    Kubiak, G.D.; Tichenor, D.A.; Sweatt, W.C.; Chow, W.W.

    1995-06-01

    Laser Plasma Sources (LPSS) of extreme ultraviolet radiation are an attractive alternative to synchrotron radiation sources for extreme ultraviolet lithography (EUVL) due to their modularity, brightness, and modest size and cost. To fully exploit the extreme ultraviolet power emitted by such sources, it is necessary to capture the largest possible fraction of the source emission half-sphere while simultaneously optimizing the illumination stationarity and uniformity on the object mask. In this LDRD project, laser plasma source illumination systems for EUVL have been designed and then theoretically and experimentally characterized. Ellipsoidal condensers have been found to be simple yet extremely efficient condensers for small-field EUVL imaging systems. The effects of aberrations in such condensers on extreme ultraviolet (EUV) imaging have been studied with physical optics modeling. Lastly, the design of an efficient large-solid-angle condenser has been completed. It collects 50% of the available laser plasma source power at 14 nm and delivers it properly to the object mask in a wide-arc-field camera.

  12. Challenges in constructing EUV metrology tools to qualify the EUV masks for HVM implementation

    NASA Astrophysics Data System (ADS)

    Houser, David C.; Dong, Feng; Perera, Chami N.; Perera, Rupert C. C.

    2015-09-01

    Extreme Ultraviolet (EUV) Lithography is still viewed as the most promising approach for maintaining the pace of Moore's Law. Recent real achievements in EUV Lithography (EUVL) have encouraged semiconductor manufacturers to reconsider their road maps. One of the principal challenges in the ongoing EUVL implementation for high volume manufacturing (HVM) is the availability of necessary clean at wavelength metrology tools. EUV Tech is the world's leading manufacturer of at-wavelength EUV metrology equipment. Founded in 1997, EUV Tech has pioneered the development of several stand-alone inspection, metrology, and calibration tools for EUV lithographic applications that can be operated in a clean room environment on the floor of a fab. In this paper, EUV Tech's R&D program to minimize particle adders in our EUV Reflectometer along with the ongoing effort to enhance the reflectivity and wavelength, precision and accuracy required to qualify the EUV masks for HVM. In addition to preliminary results from our stand alone EUV Scatterometer developed to characterize the phase roughness of a EUV mask and the introduction of EUV Tech's Pellicle test suite for testing EUV pellicles.

  13. EUV Lithography: New Metrology Challenges

    SciTech Connect

    Wood, Obert

    2007-09-26

    Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 22 nm half-pitch device node and beyond. Because its imaging wavelength is approximately twenty times shorter than those currently in use (13.5 nm versus 193-248 nm) and because EUV optics and masks must be provided with highly-precise reflective multilayer coatings, EUV lithography presents a number of new and difficult metrology challenges. In this paper, the current status of the metrology tools being used to characterize the figure and finish of EUV mirror surfaces, the defectivity and flatness of EUV mask blanks and the outgassing rates of EUV resist materials are discussed.

  14. Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

    NASA Astrophysics Data System (ADS)

    Noh, J. H.; Stanford, M. G.; Lewis, B. B.; Fowlkes, J. D.; Plank, H.; Rack, P. D.

    2014-12-01

    One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.

  15. MAGNETIC RECONNECTION: FROM 'OPEN' EXTREME-ULTRAVIOLET LOOPS TO CLOSED POST-FLARE ONES OBSERVED BY SDO

    SciTech Connect

    Zhang, Jun; Yang, Shuhong; Li, Ting; Zhang, Yuzong; Li, Leping; Jiang, Chaowei E-mail: shuhongyang@nao.cas.cn E-mail: yuzong@nao.cas.cn E-mail: cwjiang@spaceweather.ac.cn

    2013-10-10

    We employ Solar Dynamics Observatory observations and select three well-observed events including two flares and one extreme-ultraviolet (EUV) brightening. During the three events, the EUV loops clearly changed. One event was related to a major solar flare that took place on 2012 July 12 in active region NOAA AR 11520. 'Open' EUV loops rooted in a facula of the AR deflected to the post-flare loops and then merged with them while the flare ribbon approached the facula. Meanwhile, 'open' EUV loops rooted in a pore disappeared from top to bottom as the flare ribbon swept over the pore. The loop evolution was similar in the low-temperature channels (e.g., 171 Å) and the high-temperature channels (e.g., 94 Å). The coronal magnetic fields extrapolated from the photospheric vector magnetograms also show that the fields apparently 'open' prior to the flare become closed after it. The other two events were associated with a B1.1 flare on 2010 May 24 and an EUV brightening on 2013 January 03, respectively. During both of these two events, some 'open' loops either disappeared or darkened before the formation of new closed loops. We suggest that the observations reproduce the picture predicted by the standard magnetic reconnection model: 'open' magnetic fields become closed due to reconnection, manifesting as a transformation from 'open' EUV loops to closed post-flare ones.

  16. EUV resists: What's next?

    NASA Astrophysics Data System (ADS)

    Lio, Anna

    2016-03-01

    The need to print smaller features and tighter pitches drives the development of new photolithography technologies. Extreme Ultraviolet Lithography (EUVL) at 13.5 nm wavelength is expected to provide considerable resolution gain over the current technology based on 193 nm wavelength. In this paper we assess the current status of EUV photoresists and their readiness for EUVL insertion into High Volume Manufacturing (HVM). In addition, we discuss the requirements that EUV photoresists will need to satisfy in the near and long term future.

  17. Time Variabilities of Solar Wind Ion Fluxes and of X-ray and EUV Emissions from Comet Hyakutake

    NASA Technical Reports Server (NTRS)

    Neugebauer, M.; Cravens, T.; Lisse, C.; Ipavich, F.; von Steiger, R.; Shah, P.; Armstrong, T.

    1999-01-01

    Observations of X-ray and extreme ultraviolet (EUV) emissions from comet C/Hyakutake 1996 B2 made by the Rontgen X-ray satellite (ROSAT) and the Extreme Ultraviolet Explorer (EUVE) revealed a total X-ray luminosity of about 500 MW.

  18. Absolute intensity calibration of flat-field space-resolved extreme ultraviolet spectrometer using radial profiles of visible and extreme ultraviolet bremsstrahlung continuum emitted from high-density plasmas in Large Helical Device

    SciTech Connect

    Dong Chunfeng; Wang Erhui; Morita, Shigeru; Goto, Motoshi

    2011-11-15

    A precise absolute intensity calibration of a flat-field space-resolved extreme ultraviolet (EUV) spectrometer working in wavelength range of 60-400 A is carried out using a new calibration technique based on radial profile measurement of the bremsstrahlung continuum in Large Helical Device. A peaked vertical profile of the EUV bremsstrahlung continuum has been successfully observed in high-density plasmas (n{sub e}{>=} 10{sup 14} cm{sup -3}) with hydrogen ice pellet injection. The absolute calibration can be done by comparing the EUV bremsstrahlung profile with the visible bremsstrahlung profile of which the absolute value has been already calibrated using a standard lamp. The line-integrated profile of measured visible bremsstrahlung continuum is firstly converted into the local emissivity profile by considering a magnetic surface distortion due to the plasma pressure, and the local emissivity profile of EUV bremsstrahlung is secondly calculated by taking into account the electron temperature profile and free-free gaunt factor. The line-integrated profile of the EUV bremsstrahlung continuum is finally calculated from the local emissivity profile in order to compare with measured EUV bremsstrahlung profile. The absolute intensity calibration can be done by comparing measured and calculated EUV bremsstrahlung profiles. The calibration factor is thus obtained as a function of wavelength with excellent accuracy. It is also found in the profile analysis that the grating reflectivity of EUV emissions is constant along the direction perpendicular to the wavelength dispersion. Uncertainties on the calibration factor determined with the present method are discussed including charge-coupled device operation modes.

  19. EUV and infra-red lines of Fe 13

    NASA Technical Reports Server (NTRS)

    Young, P. R.; Mason, Helen E.; Thomas, R. J.

    1994-01-01

    New level population calculations for Fe-XIII are presented, and line intensities predicted. The extreme ultraviolet (EUV) lines are compared with the recent observations of the solar extreme ultraviolet rocket telescope and spectrograph (SERTS), and density estimates for the active region are given. Uses of the Fe-XIII lines are suggested, both for the sun and other stars, and the possibility of coordinating SOHO studies of EUV lines with ground based observations of Fe-XIII infrared lines is discussed.

  20. Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography

    NASA Astrophysics Data System (ADS)

    Wang, L.; Kirk, E.; Wäckerlin, C.; Schneider, C. W.; Hojeij, M.; Gobrecht, J.; Ekinci, Y.

    2014-06-01

    We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

  1. Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography.

    PubMed

    Wang, L; Kirk, E; Wäckerlin, C; Schneider, C W; Hojeij, M; Gobrecht, J; Ekinci, Y

    2014-06-13

    We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography. PMID:24850475

  2. Imaging polarimeters for solar extreme ultraviolet astronomy

    SciTech Connect

    Hoover, R.B.; Fineschi, S. ); Fontenia, J.M. ); Walker, A.B.C. Jr. )

    1991-08-01

    In this paper, the authors describe new EUV/FUV (100 {angstrom} {le} {lambda} {le} 1500 {Angstrom} polarimeter instrument concepts for solar research. These instruments are designed to observe linear polarization in EUV/FUV spectral lines originating in the outer solar atmosphere, specifically: a new coronagraph/polarimeter operating at 1215.7 {Angstrom} (neutral hydrogen Lyman {alpha}), which could observe this line in the near solar corona and lead to the first direct measurements of both strength and direction of coronal magnetic fields and a new multilayer EUV imaging polarimeter, operating at wavelengths of strong helium emission lines (e.g., 304 {Angstrom}, 584 {Angstrom}), which could observe impact polarization phenomena and provide information concerning the relative importance of thermal and nonthermal processes in solar flares. The emission mechanisms we will address with these instruments include resonance scattering and impact polarization. The authors discuss several instrument configurations and provide theoretical calculations and performance predictions for coronagraph/polarimeter instruments utilizing an optical design similar to the Ritchey-Chretien EUV/FUV telescopes developed for flight on the Stanford/MSFC/LLNL MultiSpectral Solar Telescope Array (MSSTA).

  3. Imaging polarimeters for solar extreme ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Hoover, Richard B.; Fineschi, Silvano; Fontenla, Juan M.; Walker, Arthur B. C., Jr.

    1991-01-01

    Accounts are given of EUV/FUV polarimetric instrument concepts for solar research which observe linear polarization in the spectral lines which originate in the outer solar atmosphere. The coronagraph/polarimeter instruments discussed employ all-reflective optical systems using ultrasmooth, low-scatter normal incidence mirrors and reflective polarization analyzers. The reflecting polarization analyzers operate at the Brewster angle.

  4. AN AUTOMATIC DETECTION METHOD FOR EXTREME-ULTRAVIOLET DIMMINGS ASSOCIATED WITH SMALL-SCALE ERUPTION

    SciTech Connect

    Alipour, N.; Safari, H.; Innes, D. E.

    2012-02-10

    Small-scale extreme-ultraviolet (EUV) dimming often surrounds sites of energy release in the quiet Sun. This paper describes a method for the automatic detection of these small-scale EUV dimmings using a feature-based classifier. The method is demonstrated using sequences of 171 Angstrom-Sign images taken by the STEREO/Extreme UltraViolet Imager (EUVI) on 2007 June 13 and by Solar Dynamics Observatory/Atmospheric Imaging Assembly on 2010 August 27. The feature identification relies on recognizing structure in sequences of space-time 171 Angstrom-Sign images using the Zernike moments of the images. The Zernike moments space-time slices with events and non-events are distinctive enough to be separated using a support vector machine (SVM) classifier. The SVM is trained using 150 events and 700 non-event space-time slices. We find a total of 1217 events in the EUVI images and 2064 events in the AIA images on the days studied. Most of the events are found between latitudes -35 Degree-Sign and +35 Degree-Sign . The sizes and expansion speeds of central dimming regions are extracted using a region grow algorithm. The histograms of the sizes in both EUVI and AIA follow a steep power law with slope of about -5. The AIA slope extends to smaller sizes before turning over. The mean velocity of 1325 dimming regions seen by AIA is found to be about 14 km s{sup -1}.

  5. Advanced materials for multilayer mirrors for extreme ultraviolet solar astronomy.

    PubMed

    Bogachev, S A; Chkhalo, N I; Kuzin, S V; Pariev, D E; Polkovnikov, V N; Salashchenko, N N; Shestov, S V; Zuev, S Y

    2016-03-20

    We provide an analysis of contemporary multilayer optics for extreme ultraviolet (EUV) solar astronomy in the wavelength ranges: λ=12.9-13.3  nm, λ=17-21  nm, λ=28-33  nm, and λ=58.4  nm. We found new material pairs, which will make new spaceborne experiments possible due to the high reflection efficiencies, spectral resolution, and long-term stabilities of the proposed multilayer coatings. In the spectral range λ=13  nm, Mo/Be multilayer mirrors were shown to demonstrate a better ratio of reflection efficiency and spectral resolution compared with the commonly used Mo/Si. In the spectral range λ=17-21  nm, a new multilayer structure Al/Si was proposed, which had higher spectral resolution along with comparable reflection efficiency compared with the commonly used Al/Zr multilayer structures. In the spectral range λ=30  nm, the Si/B4C/Mg/Cr multilayer structure turned out to best obey reflection efficiency and long-term stability. The B4C and Cr layers prevented mutual diffusion of the Si and Mg layers. For the spectral range λ=58  nm, a new multilayer Mo/Mg-based structure was developed; its reflection efficiency and long-term stability have been analyzed. We also investigated intrinsic stresses inherent for most of the multilayer structures and proposed possibilities for stress elimination.

  6. Advanced materials for multilayer mirrors for extreme ultraviolet solar astronomy.

    PubMed

    Bogachev, S A; Chkhalo, N I; Kuzin, S V; Pariev, D E; Polkovnikov, V N; Salashchenko, N N; Shestov, S V; Zuev, S Y

    2016-03-20

    We provide an analysis of contemporary multilayer optics for extreme ultraviolet (EUV) solar astronomy in the wavelength ranges: λ=12.9-13.3  nm, λ=17-21  nm, λ=28-33  nm, and λ=58.4  nm. We found new material pairs, which will make new spaceborne experiments possible due to the high reflection efficiencies, spectral resolution, and long-term stabilities of the proposed multilayer coatings. In the spectral range λ=13  nm, Mo/Be multilayer mirrors were shown to demonstrate a better ratio of reflection efficiency and spectral resolution compared with the commonly used Mo/Si. In the spectral range λ=17-21  nm, a new multilayer structure Al/Si was proposed, which had higher spectral resolution along with comparable reflection efficiency compared with the commonly used Al/Zr multilayer structures. In the spectral range λ=30  nm, the Si/B4C/Mg/Cr multilayer structure turned out to best obey reflection efficiency and long-term stability. The B4C and Cr layers prevented mutual diffusion of the Si and Mg layers. For the spectral range λ=58  nm, a new multilayer Mo/Mg-based structure was developed; its reflection efficiency and long-term stability have been analyzed. We also investigated intrinsic stresses inherent for most of the multilayer structures and proposed possibilities for stress elimination. PMID:27140543

  7. Research in extreme ultraviolet and far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Bowyer, C. S.

    1987-01-01

    Analysis and interpretation continued on data generated by the flight of 27.086 in April of 1986 and by the successful UVX mission. Optical and mechanical design of the 1 meter EUV telescope, planned for launch with the large SPARTAN type carrier, ASTRO-SPAS, was also continued. The major effort centered on the preparation of flight 27.106, scheduled to launch in September, 1986. Work which was performed included: design of the skins and bulkheads; completion of the optical, mechanical, and electrical design; purchase of the major components of the instruments; assemblage of the electrical components; and performance of theoretical work, to support the data interpretation.

  8. Changes of solar extreme ultraviolet spectrum in solar cycle 24

    NASA Astrophysics Data System (ADS)

    Hao, Yongqiang; Zhang, Donghe; Xiao, Zuo; Huang, Jianping

    2016-07-01

    Following the extreme solar minimum during 2008 - 2009, solar activity keeps low in solar cycle 24 (SC24) and is making SC24 the weakest one of recent cycles. In this paper, we compare the solar EUV spectral irradiance between SC23 and SC24, using the measurements by the Solar EUV Experiment (SEE) on the Thermospheric Ionospheric Mesospheric Energy and Dynamics (TIMED) spacecraft. The EUV spectrum varies with solar activity, and is in general a linear function of a proxy index P= (F10.7 + F10.7A)/2. However, we find the slope of this function, i.e., the change rate of irradiance at each wavelength with P, differs between SC23 and SC24. Consequently, at a given P level, the irradiance in SC24 is higher at wavelength of 30 - 50 nm, but lower at 60 - 120 nm and longward of 140 nm; the inter-cycle variation of EUV irradiance at some wavelengths can be 30 - 40% in absolute flux. We further examine 38 most intense emission lines and find that, taking P as a reference, most of the bright coronal lines get stronger in SC24 and, by contrast, those from the chromosphere and transition region have less variability in SC24. We therefore suggest that, the empirical relation between solar EUV and P, which is derived from observations in previous solar cycles, may not adapt to SC24. The changes in EUV spectrum need to be considered in the models for aeronomic study, especially those using F10.7 index as an input parameter.

  9. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  10. Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

    SciTech Connect

    Malinowski, Pawel E.; Mertens, Robert; Van Hoof, Chris; Duboz, Jean-Yves; Semond, Fabrice; Frayssinet, Eric; Verhoeve, Peter; Giordanengo, Boris; BenMoussa, Ali

    2011-04-04

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection.

  11. TEMPERATURE AND EXTREME-ULTRAVIOLET INTENSITY IN A CORONAL PROMINENCE CAVITY AND STREAMER

    SciTech Connect

    Kucera, T. A.; Tripathi, D.

    2012-09-20

    We analyze the temperature and EUV line emission of a coronal cavity and surrounding streamer in terms of a morphological forward model. We use a series of iron line ratios observed with the Hinode Extreme-ultraviolet Imaging Spectrograph (EIS) on 2007 August 9 to constrain temperature as a function of altitude in a morphological forward model of the streamer and cavity. We also compare model predictions to the EIS EUV line intensities and polarized brightness (pB) data from the Mauna Loa Solar Observatory (MLSO) Mark 4 K-coronameter. This work builds on earlier analysis using the same model to determine geometry of and density in the same cavity and streamer. The fit to the data with altitude-dependent temperature profiles indicates that both the streamer and cavity have temperatures in the range 1.4-1.7 MK. However, the cavity exhibits substantial substructure such that the altitude-dependent temperature profile is not sufficient to completely model conditions in the cavity. Coronal prominence cavities are structured by magnetism so clues to this structure are to be found in their plasma properties. These temperature substructures are likely related to structures in the cavity magnetic field. Furthermore, we find that the model overestimates the EUV line intensities by a factor of 4-10, without overestimating pB. We discuss this difference in terms of filling factors and uncertainties in density diagnostics and elemental abundances.

  12. Imaging extreme ultraviolet spectrometer employing a single toroidal diffraction grating: the initial evaluation.

    PubMed

    Huber, M C; Timothy, J G; Morgan, J S; Lemaitre, G; Tondello, G; Jannitti, E; Scarin, P

    1988-08-15

    A high-efficiency extreme ultraviolet (EUV) imaging spectrometer has been constructed and tested. The spectrometer employs a concave toroidal grating illuminated at normal incidence in a Rowland circle mounting and has only one reflecting surface. The toroidal grating has been fabricated by a new technique employing an elastically deformable submaster grating which is replicated in a spherical form and then mechanically distorted to produce the desired aspect ratio of the toroidal surface for stigmatic imaging over the selected wavelength range. The fixed toroidal grating used in the spectrometer is then replicated from this surface. Photographic tests and initial photoelectric tests with a 2-D pulse-counting detector system have verified the image quality of the toroidal grating at wavelengths near 600 A. The results of these initial tests are described in detail, and the basic designs of two instruments which could employ the imaging spectrometer for astrophysical investigations in space are briefly described, namely, a high-resolution EUV spectroheliometer for studies of the solar chromosphere, transition region, and corona and an EUV spectroscopic telescope for studies of nonsolar objects. PMID:20539406

  13. Extreme Ultraviolet Explorer observations of the magnetic cataclysmic variable RE 1938-461

    NASA Technical Reports Server (NTRS)

    Warren, John K.; Vallerga, John V.; Mauche, Christopher W.; Mukai, Koji; Siegmund, Oswald H. W.

    1993-01-01

    The magnetic cataclysmic variable RE 1938-461 was observed by the Extreme Ultraviolet Explorer (EUVE) Deep Survey instrument on 1992 July 8-9 during in-orbit calibration. It was detected in the Lexan/ boron (65-190 A) band, with a quiescent count rate of 0.0062 +/- 0.0017/s, and was not detected in the aluminum/carbon (160-360 A) band. The Lexan/boron count rate is lower than the corresponding ROSAT wide-field camera Lexan/boron count rate. This is consistent with the fact that the source was in a low state during an optical observation performed just after the EUVE observation, whereas it was in an optical high state during the ROSAT observation. The quiescent count rates are consistent with a virtual cessation of accretion. Two transient events lasting about 1 hr occurred during the Lexan/boron pointing, the second at a count rate of 0.050 +/- 0.006/s. This appears to be the first detection of an EUV transient during the low state of a magnetic cataclysmic variable. We propose two possible explanations for the transient events.

  14. Extreme Ultraviolet Explorer deep survey observations of a large flare on AU Microscopii

    NASA Technical Reports Server (NTRS)

    Cully, Scott L.; Siegmund, Oswald H. W.; Vedder, Peter W.; Vallerga, John V.

    1993-01-01

    We have made the first extended observation of a stellar flare in the EUV with 100 s time resolution. The flare was detected on AU Mic by the Extreme Ultraviolet Explorer satellite at 12:38 UT on 1992 July 15 during a 4 d observation from 1992 July 14 to 18. This was a large flare detected in the Lexan/boron (65-190 A) band with an observed peak count rate of 7.0 +/- 0.5 counts/s, corresponding to a peak luminosity of 10 exp 30 erg/s in the Lexan/boron bandpass. This is significantly above the measured quiescent level of 0.4 +/- 0.2 counts/s. The flare consisted of a sharp peak lasting about 2 hr, followed by a decaying tail that lasted more than a day. The total EUV energy of the event is estimated to be 3 x 10 exp 34 ergs. A second, smaller flare was also observed and is described. We conclude that the large emission measures on order of 6 x 10 exp 53/cu cm are due to large volumes with characteristic length scales of order the stellar radius. We compare these EUV observations with stellar flare observations in other bandpasses and estimate the likelihood of seeing similar flares in future observations.

  15. Boundary integral spectral element method analyses of extreme ultraviolet multilayer defects.

    PubMed

    Niu, Jun; Luo, Ma; Fang, Yuan; Liu, Qing Huo

    2014-10-01

    Extreme ultraviolet (EUV) lithography is an emerging technology for high-density semiconductor patterning. Multilayer distortion caused by mask defects is regarded as one of the critical challenges of EUV lithography. To simulate the influence of the defected nanoscale structures with high accuracy and efficiency, we have developed a boundary integral spectral element method (BI-SEM) that combines the SEM with a set of surface integral equations. The SEM is used to solve the interior computational domain, while the open boundaries are truncated by the surface integral equations. Both two-dimensional (2D) and three-dimensional (3D) EUV cases are simulated. Through comparing the performance of this method with the conventional finite element method (FEM), it is shown that the proposed BI-SEM can greatly decrease both the memory cost and the computation time. For typical 2D problems, we show that the BI-SEM is 11 and 1.25 times more efficient than the FEM in terms of memory and CPU time, respectively, while for 3D problems, these factors are over 14 and 2, respectively, for smaller problems; realistic 3D problems that cannot be solved by the conventional FEM can be accurately simulated by the BI-SEM. PMID:25401246

  16. Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas

    SciTech Connect

    Roy, A. E-mail: aroy@barc.gov.in; Harilal, S. S.; Polek, M. P.; Hassan, S. M.; Hassanein, A.; Endo, A.

    2014-03-15

    We investigated the role of laser pulse duration and intensity on extreme ultraviolet (EUV) generation and ion emission from a laser produced Sn plasma. For producing plasmas, planar slabs of pure Sn were irradiated with 1064 nm Nd:YAG laser pulses with varying pulse duration (5–20 ns) and intensity. Experimental results performed at CMUXE indicate that the conversion efficiency (CE) of the EUV radiation strongly depend on laser pulse width and intensity, with a maximum CE of ∼2.0% measured for the shortest laser pulse width used (5 ns). Faraday Cup ion analysis of Sn plasma showed that the ion flux kinetic profiles are shifted to higher energy side with the reduction in laser pulse duration and narrower ion kinetic profiles are obtained for the longest pulse width used. However, our initial results showed that at a constant laser energy, the ion flux is more or less constant regardless of the excitation laser pulse width. The enhanced EUV emission obtained at shortest laser pulse duration studied is related to efficient laser-plasma reheating supported by presence of higher energy ions at these pulse durations.

  17. Ptychographic imaging with a compact gas-discharge plasma extreme ultraviolet light source.

    PubMed

    Odstrcil, M; Bussmann, J; Rudolf, D; Bresenitz, R; Miao, Jianwei; Brocklesby, W S; Juschkin, L

    2015-12-01

    We report the demonstration of a scanning probe coherent diffractive imaging method (also known as ptychographic CDI) using a compact and partially coherent gas-discharge plasma source of extreme ultraviolet (EUV) radiation at a 17.3 nm wavelength. Until now, CDI has been mainly carried out with coherent, high-brightness light sources, such as third generation synchrotrons, x-ray free-electron lasers, and high harmonic generation. Here we performed ptychographic lensless imaging of an extended sample using a compact, lab-scale source. The CDI reconstructions were achieved by applying constraint relaxation to the CDI algorithm. Experimental results indicate that our method can handle the low spatial coherence and broadband nature of the EUV illumination, as well as the residual background due to visible light emitted by the gas-discharge source. The ability to conduct ptychographic imaging with lab-scale and partially coherent EUV sources is expected to significantly expand the applications of this powerful CDI method. PMID:26625054

  18. Corrective finishing of extreme ultraviolet photomask blanks by precessed bonnet polisher.

    PubMed

    Beaucamp, Anthony; Namba, Yoshiharu; Charlton, Phillip

    2014-05-10

    The progressive transition from Excimer to extreme ultraviolet (EUV) lithography is driving a need for flatter and smoother photomask blanks. It is, however, proving difficult to meet the next-generation specification with the conventional chemical mechanical polishing technology commonly used for finishing photomask blanks. This paper reports on the application of subaperture computer numerical control precessed bonnet polishing technology to the corrective finishing of photomask substrates for EUV lithography. Full-factorial analysis was used to identify process parameters capable of delivering microroughness below 0.5 nm rms while retaining relatively high removal rates. Experimental results show that masks prepolished to 300-600 nm peak-to-valley (P-V) flatness by chemical/mechanical polishing can then be improved down to 50-100 nm P-V flatness using the automated technology described in this paper. A series of edge polishing experiments also hints at the possibility of increasing the quality area beyond the 142 mm square defined in the official EUV photomask specification. PMID:24922029

  19. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.

    PubMed

    Ashby, Paul D; Olynick, Deirdre L; Ogletree, D Frank; Naulleau, Patrick P

    2015-10-14

    Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2 nm line-edge roughness, and 20 mJ cm(-2) exposure dose. Here, the current state of the development of EUV resist materials is reviewed. First, pattern formation in resist materials is described and the Hansen solubility sphere (HSS) is used as a framework for understanding the pattern-development process. Then, recent progress in EUVL resist chemistry and characterization is discussed. Incremental advances are obtained by transferring chemically amplified resist materials developed for 193 nm lithography to EUV wavelengths. Significant advances will result from synthesizing high-absorbance resist materials using heavier atoms. In the framework of the HSS model, these materials have significant room for improvement and thus offer great promise as high-performance EUV resists for patterning of sub-10 nm features. PMID:26079187

  20. Extreme ultraviolet spectroscopy and modeling of Cu on the SSPX Spheromak and laser plasma 'Sparky'

    SciTech Connect

    Weller, M. E.; Safronova, A. S.; Kantsyrev, V. L.; Safronova, U. I.; Petkov, E. E.; Wilcox, P. G.; Osborne, G. C.; Clementson, J.; Beiersdorfer, P.

    2012-10-15

    Impurities play a critical role in magnetic fusion research. In large quantities, impurities can cool and dilute plasma creating problems for achieving ignition and burn; however in smaller amounts the impurities could provide valuable information about several plasma parameters through the use of spectroscopy. Many impurity ions radiate within the extreme ultraviolet (EUV) range. Here, we report on spectra from the silver flat field spectrometer, which was implemented at the Sustained Spheromak Physics experiment (SSPX) to monitor ion impurity emissions. The chamber within the SSPX was made of Cu, which makes M-shell Cu a prominent impurity signature. The Spect3D spectral analysis code was utilized to identify spectral features in the range of 115-315 A and to more fully understand the plasma conditions. A second set of experiments was carried out on the compact laser-plasma x-ray/EUV facility 'Sparky' at UNR, with Cu flat targets used. The EUV spectra were recorded between 40-300 A and compared with results from SSPX.

  1. HOMOLOGOUS EXTREME ULTRAVIOLET WAVES IN THE EMERGING FLUX REGION OBSERVED BY THE SOLAR DYNAMICS OBSERVATORY

    SciTech Connect

    Zheng Ruisheng; Jiang Yunchun; Yang Jiayan; Bi Yi; Hong Junchao; Yang, B.; Yang Dan

    2012-03-01

    Taking advantage of the high temporal and spatial resolution of the Solar Dynamics Observatory (SDO) observations, we present four homologous extreme ultraviolet (EUV) waves within 3 hr on 2010 November 11. All EUV waves emanated from the same emerging flux region (EFR), propagated in the same direction, and were accompanied by surges, weak flares, and faint coronal mass ejections (CMEs). The waves had the basically same appearance in all EUV wavebands of the Atmospheric Imaging Assembly on SDO. The waves propagated at constant velocities in the range of 280-500 km s{sup -1}, with little angular dependence, which indicated that the homologous waves could be likely interpreted as fast-mode waves. The waves are supposed to likely involve more than one driving mechanism, and it was most probable that the waves were driven by the surges, due to their close timing and location relations. We also propose that the homologous waves were intimately associated with the continuous emergence and cancellation of magnetic flux in the EFR, which could supply sufficient energy and trigger the onsets of the waves.

  2. CO2 laser drives extreme ultraviolet nano-lithography — second life of mature laser technology

    NASA Astrophysics Data System (ADS)

    Nowak, K. M.; Ohta, T.; Suganuma, T.; Fujimoto, J.; Mizoguchi, H.; Sumitani, A.; Endo, A.

    2013-12-01

    It was shown both theoretically and experimentally that nanosecond order laser pulses at 10.6 micron wavelength were superior for driving the Sn plasma extreme ultraviolet (EUV) source for nano-lithography for the reasons of higher conversion efficiency, lower production of debris and higher average power levels obtainable in CO2 media without serious problems of beam distortions and nonlinear effects occurring in competing solid-state lasers at high intensities. The renewed interest in such pulse format, wavelength, repetition rates in excess of 50 kHz and average power levels in excess of 18 kiloWatt has sparked new opportunities for a matured multi-kiloWatt CO2 laser technology. The power demand of EUV source could be only satisfied by a Master-Oscillator-Power-Amplifier system configuration, leading to a development of a new type of hybrid pulsed CO2 laser employing a whole spectrum of CO2 technology, such as fast flow systems and diffusion-cooled planar waveguide lasers, and relatively recent quantum cascade lasers. In this paper we review briefly the history of relevant pulsed CO2 laser technology and the requirements for multi-kiloWatt CO2 laser, intended for the laser-produced plasma EUV source, and present our recent advances, such as novel solid-state seeded master oscillator and efficient multi-pass amplifiers built on planar waveguide CO2 lasers.

  3. Ptychographic imaging with a compact gas-discharge plasma extreme ultraviolet light source.

    PubMed

    Odstrcil, M; Bussmann, J; Rudolf, D; Bresenitz, R; Miao, Jianwei; Brocklesby, W S; Juschkin, L

    2015-12-01

    We report the demonstration of a scanning probe coherent diffractive imaging method (also known as ptychographic CDI) using a compact and partially coherent gas-discharge plasma source of extreme ultraviolet (EUV) radiation at a 17.3 nm wavelength. Until now, CDI has been mainly carried out with coherent, high-brightness light sources, such as third generation synchrotrons, x-ray free-electron lasers, and high harmonic generation. Here we performed ptychographic lensless imaging of an extended sample using a compact, lab-scale source. The CDI reconstructions were achieved by applying constraint relaxation to the CDI algorithm. Experimental results indicate that our method can handle the low spatial coherence and broadband nature of the EUV illumination, as well as the residual background due to visible light emitted by the gas-discharge source. The ability to conduct ptychographic imaging with lab-scale and partially coherent EUV sources is expected to significantly expand the applications of this powerful CDI method.

  4. Temperature and Extreme-ultraviolet Intensity in a Coronal Prominence Cavity and Streamer

    NASA Astrophysics Data System (ADS)

    Kucera, T. A.; Gibson, S. E.; Schmit, D. J.; Landi, E.; Tripathi, D.

    2012-09-01

    We analyze the temperature and EUV line emission of a coronal cavity and surrounding streamer in terms of a morphological forward model. We use a series of iron line ratios observed with the Hinode Extreme-ultraviolet Imaging Spectrograph (EIS) on 2007 August 9 to constrain temperature as a function of altitude in a morphological forward model of the streamer and cavity. We also compare model predictions to the EIS EUV line intensities and polarized brightness (pB) data from the Mauna Loa Solar Observatory (MLSO) Mark 4 K-coronameter. This work builds on earlier analysis using the same model to determine geometry of and density in the same cavity and streamer. The fit to the data with altitude-dependent temperature profiles indicates that both the streamer and cavity have temperatures in the range 1.4-1.7 MK. However, the cavity exhibits substantial substructure such that the altitude-dependent temperature profile is not sufficient to completely model conditions in the cavity. Coronal prominence cavities are structured by magnetism so clues to this structure are to be found in their plasma properties. These temperature substructures are likely related to structures in the cavity magnetic field. Furthermore, we find that the model overestimates the EUV line intensities by a factor of 4-10, without overestimating pB. We discuss this difference in terms of filling factors and uncertainties in density diagnostics and elemental abundances.

  5. Wafer and reticle positioning system for the Extreme Ultraviolet Lithography Engineering Test Stand

    SciTech Connect

    WRONOSKY,JOHN B.; SMITH,TONY G.; CRAIG,MARCUS J.; STURGIS,BEVERLY R.; DARNOLD,JOEL R.; WERLING,DAVID K.; KINCY,MARK A.; TICHENOR,DANIEL A.; WILLIAMS,MARK E.; BISCHOFF,PAUL

    2000-01-27

    This paper is an overview of the wafer and reticle positioning system of the Extreme Ultraviolet Lithography (EUVL) Engineering Test Stand (ETS). EUVL represents one of the most promising technologies for supporting the integrated circuit (IC) industry's lithography needs for critical features below 100nm. EUVL research and development includes development of capabilities for demonstrating key EUV technologies. The ETS is under development at the EUV Virtual National Laboratory, to demonstrate EUV full-field imaging and provide data that supports production-tool development. The stages and their associated metrology operated in a vacuum environment and must meet stringent outgassing specifications. A tight tolerance is placed on the stage tracking performance to minimize image distortion and provide high position repeatability. The wafer must track the reticle with less than {+-}3nm of position error and jitter must not exceed 10nm rms. To meet these performance requirements, magnetically levitated positioning stages utilizing a system of sophisticated control electronics will be used. System modeling and experimentation have contributed to the development of the positioning system and results indicate that desired ETS performance is achievable.

  6. Highly repetitive, extreme-ultraviolet radiation source based on a gas-discharge plasma.

    PubMed

    Bergmann, K; Schriever, G; Rosier, O; Müller, M; Neff, W; Lebert, R

    1999-09-01

    An extreme-ultraviolet (EUV) radiation source near the 13-nm wavelength generated in a small (1.1 J) pinch plasma is presented. The ignition of the plasma occurs in a pseudosparklike electrode geometry, which allows for omitting a switch between the storage capacity and the electrode system and for low inductive coupling of the electrically stored energy to the plasma. Thus energies of only a few joules are sufficient to create current pulses in the range of several kiloamperes, which lead to a compression and a heating of the plasmas to electron densities of more than 10(17) cm(-3) and temperatures of several tens of electron volts, which is necessary for emission in the EUV range. As an example, the emission spectrum of an oxygen plasma in the 11-18-nm range is presented. Transitions of beryllium- and lithium-like oxygen ions can be identified. Current waveform and time-resolved measurements of the EUV emission are discussed. In initial experiments a repetitive operation at nearly 0.2 kHz could be demonstrated. Additionally, the broadband emission of a xenon plasma generated in a 2.2-J discharge is presented.

  7. Silicon photodiodes with integrated thin-film filters for selective bandpasses in the extreme ultraviolet

    NASA Astrophysics Data System (ADS)

    Canfield, L. R.; Vest, Robert E.; Woods, Thomas N.; Korde, Raj S.

    1994-09-01

    Silicon photodiodes which operate satisfactorily in the extreme ultraviolet (EUV) have been commercially available for the past few years. These photodiodes also inherently respond to radiation extending from the x-ray region to the near infrared, a property which is undesirable in many EUV applications. The addition of a thin film of a suitable filtering material to the surface of such a photodiode can accomplish the restriction of the sensitivity of the silicon to a much narrower band, or bands, in the EUV. This results in a rugged, yet sensitive photometer for applications in which dominant out-of-band radiation is present. Applications include plasma diagnostics, solar physics, x-ray lithography, x-ray microscopy, and materials science. Previous attempts to produce such devices have resulted in degraded shunt resistance with a corresponding increase in background noise. Prototype detectors have now been fabricated using directly deposited films of aluminum, aluminum/carbon, aluminum/carbon/scandium, silver, tin, and titanium, without degradation of the noise characteristics of the uncoated photodiodes. Measured and theoretical sensitivity data are presented, as well as a discussion of relatively simple methods to reduce the x-ray response of such filtered detectors.

  8. Simulation of particle velocity in a laser-produced tin plasma extreme ultraviolet source

    SciTech Connect

    Masnavi, Majid; Nakajima, Mitsuo; Horioka, Kazuhiko; Araghy, Homaira Parchamy; Endo, Akira

    2011-06-15

    In connection with fast heating in a laser produced plasma (LPP) extreme ultraviolet (EUV) source, the superheating behavior of bulk tin (Sn) at high heating rates is investigated. A constant temperature and pressure molecular dynamics simulation using modified Lennard-Jones and Coulomb potentials suitable for studying the liquid structure of Sn is employed in order to derive the caloric curves of the solid and liquid phases. The results have shown transient effects on the phase transitions. Superheating is observed during the melting and vaporizing processes. The velocity distribution of Sn particles against typical laser fluence in a LPP EUV light source has been numerically investigated using a simplified method including a one-dimensional, two-temperature, molecular dynamics, and steady-state ionization model. In the framework of our model, it was found that ejected Sn particles have a maximum velocity on the order of 10 to 40 km/s in plasma created using a nanosecond pre-pulse neodymium-doped yttrium aluminum garnet (Nd:YAG, 1.06 {mu}m) laser in EUV lithography experiments.

  9. The Application of High-Order Harmonics to Extreme Ultraviolet Polarimetry

    NASA Astrophysics Data System (ADS)

    Brimhall, Nicole; Painter, John; Turner, Matthew; Turley, R. Steven; Ware, Michael; Peatross, Justin

    2006-10-01

    We report on the construction of an extreme ultraviolet (EUV) polarimeter based on high-order harmonic generation for characterizing optical surfaces from 8-62 nm. High harmonics as an EUV source are advantageous in that they are polarized (linear, same as laser) and measurements of several wavelengths of light can be made simultaneously. Although not as bright as a synchrotron source, the flux of EUV light is 30,000 times that of a commonly used plasma source. We have demonstrated the feasibility of this project with a simple prototype instrument, which measured the reflectance of samples from 30 nm to 62 nm. The prototype demonstrated that sensitivity is sufficient for measuring reflectances as low as 0.5%. The full instrument employs extensive scanning mobility as opposed to the fixed angle and fixed wavelength range of our earlier prototype. This project represents an authentic `work-horse' application for high-order harmonics, as opposed to merely demonstrating proof of concept.

  10. First spectral observations of the diffuse background with the Extreme Ultraviolet Explorer

    NASA Technical Reports Server (NTRS)

    Jelinksy, P.; Vallerga, J. V.; Edelstein, J.

    1995-01-01

    We present the first results from the analysis of the spectroscopic observations of diffuse extreme ultraviolet (EUV) emission taken with the Extreme Ultraviolet Explorer (EUVE) spectrometers in the wavelength range 160-740 A. Although not designed or optimized for diffuse observation, the EUVE spectrometers are the most sensitive diffuse EUV spectrometer in orbit. The spectral resolution for diffuse emission of the medium and long-wavelength spectrometers are 17 and 34 A FWHM, respectively. During the period from 1992 July 25 to 1992 August 19, the spectrometers surveyed a 2 x 20 deg field scanned from (l, b) = (24 deg, -28 deg) to (44 deg, -74 deg) with a total effective exposure time of 575,232 s. The only emission lines detected were those of He I and He II (584, 537, 304 A) with intensities consistent with local geocoronal and/or interplanetary scattering of solar radiation (584 A = 1.30 rayleighs; 537 A = 0.040 R; and 304 A = 0.029 R). Models of the soft X-ray background, which results from a 10(exp 6) K plasma (Local Bubble) surrounding the neutral gas near the Sun (Local Cloud), predict that most of the flux from the hot plasma appears as emission lines in the EUV. We have compared these spectral predictions with our observations to place limits on the emission measure versus temperature of the proposed hot plasma. Using the same plasma model, we derived emissions measures for our data and the C and B soft X-ray bands of the Wisconsin rocket survey. We find that our limits for the plasma emission measure are a factor of 5-10 below the C- and B-band emission measures over the temperature range from 10(exp 5.7) to 10(exp 6.4) K. We explore possible scenarios that could reconcile our results with the X-ray surveys and conclude that depletion or a nonequilibrium plasma state rather than absorption are the more likely explanations of the discrepancy. We also show that our spectrum is inconsistent with the spectrum from the approximately 10(exp 5) K gas at the

  11. Extreme ultraviolet light sources for use in semiconductor lithography—state of the art and future development

    NASA Astrophysics Data System (ADS)

    Stamm, Uwe

    2004-12-01

    This paper gives an overview of the development status and plans of extreme ultraviolet (EUV) light sources at XTREME technologies, a joint venture of Lambda Physik AG, Göttingen and JENOPTIK LOS GmbH, Jena, Germany. Results for gas discharge-produced plasma (GDPP) and laser-produced plasma (LPP), the two major technologies in EUV sources, are presented. The GDPP EUV sources use the Z-pinch principle with efficient sliding-discharge pre-ionization. First prototypes of commercial gas discharge sources with an EUV power of 35 W in 2π sr have already been integrated into EUV microsteppers. These sources are equipped with a debris-filter which supports an optics lifetime exceeding 100 million pulses at 1 kHz repetition rate. The same lifetime was achieved for the components of the discharge system itself. The progress in the development of high-power discharge sources based on xenon resulted in an EUV power of 200 W into a 2π sr solid angle, in continuous operation, at 4.5 kHz repetition rate, by implementation of porous-metal cooling technology. The available intermediate focus (IF) power is 22 W taking into account experimentally verified losses in a 1.8 sr source collector module. The usable IF power depends on the etendue of the optical system of the EUV scanner. For the current size of the EUV emitting plasma the etendue acceptance factor may be below 0.5. The currently usable IF power with 1.8 sr collector mirror may therefore be about 10 W. Z-pinch discharge sources with Sn as the emitter have been developed as a more efficient alternative to xenon fuelled sources. Tin sources showed a conversion efficiency (CE) that was double that of xenon. EUV power of 400 W in 2π sr has been generated at only 4.5 kHz repetition rate. The available IF power is 44 W. Estimates evaluating the tin source performance reveal the potential for achieving high-volume manufacturing (HVM) power specification by using existing technology. Because of their small plasma size and the

  12. Generation, temporal characterization and applications of femtosecond-/ attosecond extreme ultraviolet pulses

    NASA Astrophysics Data System (ADS)

    Thomann, Isabell

    The work of this thesis is arranged into three parts: (A) Generation and temporal characterization of extreme ultraviolet (EUV) attosecond pulses. In this work I present the generation and first temporal characterization of sub-optical cycle EUV radiation generated in a noble-gas filled hollow-core waveguide. Two regimes of EUV radiation were characterized, ranging from 200 attoseconds to ˜ 1 femtosecond in duration. The first regime that was characterized distinguishes itself from EUV radiation generated by other methods by its narrow (˜ 1 eV) spectral width, its simple energy tunability and its temporal confinement to ˜ 1 femtosecond. In the second regime, single isolated pulses of 200 attoseconds duration (and accordingly larger bandwidth) were generated. In both regimes dynamic phase-matching effects create an extremely short time window within which efficient nonlinear conversion is possible, while it is suppressed outside this window. Temporal characterization of the generated EUV pulses was approached by two-color pump-probe photoelectron spectroscopy. Therefore an efficient photoelectron spectrometer was set up, detecting electrons in a 2pi collection angle. For the interpretation of the experimental data, an analytical model as well as an iterative algorithm were developed, to allow extraction of complex EUV waveforms. The demonstrated radiation will allow for time-resolved studies of the fastest processes in molecules and condensed matter, while at the same time ensuring adequate energy resolution for addressing individual electronic states. (B) Application of a COLTRIMS reaction microscope in combination with femtosecond EUV pulses to questions in molecular physics. The combination of the sensitive detection capabilities of a COLTRIMS reaction microscope with the high time resolution of pump-probe experiments using femtosecond extreme-ultraviolet pulses makes it possible to answer very fundamental open questions in molecular physics such as the

  13. Full field analysis of critical dimension uniformity due to focal variation for contact features in extreme ultraviolet lithography.

    PubMed

    Kuo, Hung-Fei; Frederick

    2014-03-01

    Extreme ultraviolet (EUV) lithography is the leading candidate for 22 nm node technology and beyond. This research studies the influence of focal contributor on critical dimension (CD) variation in the EUV lithography and calculates the CD sensitivity to focal contributor based on the resist CD. EUV lithography parameters used in the simulation include NA = 0.25, 6 degrees oblique incident on the mask and source wavelength at 13.6 nm. The reflection design of EUV mask consists of 40 alternating Si/Mo layers, a ruthenium capping layer, and an absorber layer. The Rayleigh-Sommerfeld diffraction theory is adapted to solve the aerial image of contact hole (CH) feature layouts on the EUV mask. Then the resist CDs for the CH feature are measured at the position of the 10% from the bottom of resist profile. The target CD is 35 nm on wafer. The simulation results reveal the 2 nm discrepancy of spatial position for the aerial image curves measured between on the X metrology and Y metrology planes. The CDs of CH features with the iso-pitch are more sensitive to focal variation than the CDs of the features with the dense pitch. The maximum CD uniformity is 3.1 nm for the focal range at 90 nm. PMID:24745274

  14. EUVE photometric observations of the Moon

    NASA Astrophysics Data System (ADS)

    Gladstone, G. R.; McDonald, J. S.; Boyd, W. T.; Bowyer, S.

    1994-03-01

    During its all-sky survey, the Extreme Ultraviolet Explorer (EUVE) satellite observed the Moon several times at first and last quarters, and once immediately following the Dec. 10 1992 lunar eclipse. We present here a portion of this data, in the form of extreme-ultraviolet (EUV) images of the Moon and derived geometric albedos. From the EUVE photometer data we obtain average geometric albedos of 0.15% (+/- 0.03%), 3.1% (+/- 0.3%), and 3.5% (+/- 0.3%), over wavelength intervals of 150-240 A, 400-580 A, and 550-650 A, respectively. An upper limit geometric albedo of 0.13% is obtained for the wavelength interval 75-180 A. Also, using previously published ROSAT data, we estimate a lunar geometric albedo of 0.014% (+/- 0.002%) over the wavelength interval 50-80 A. These EUV albedos (and previously published far-ultraviolet albedos) are well fit by the scaled reflectivities of SiO2 and Al2O3. Over the wavelength ranges of the EUVE photometers, the observed brightness of the Moon seems to be largely consistent with reflected sunlight rather than X-ray fluorescence. Since the L- and M-shell fluorescence signal is expected to be carried by only small number of emission lines, however, it will require EUV observations of higher spectral resolution (approximately less than 5 A) to determine their exact contribution, if any, to the lunar EUV spectrum.

  15. SLOW PATCHY EXTREME-ULTRAVIOLET PROPAGATING FRONTS ASSOCIATED WITH FAST CORONAL MAGNETO-ACOUSTIC WAVES IN SOLAR ERUPTIONS

    SciTech Connect

    Guo, Y.; Ding, M. D.; Chen, P. F.

    2015-08-15

    Using the high spatiotemporal resolution extreme ultraviolet (EUV) observations of the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory, we conduct a statistical study of the observational properties of the coronal EUV propagating fronts. We find that it might be a universal phenomenon for two types of fronts to coexist in a large solar eruptive event. It is consistent with the hybrid model of EUV propagating fronts, which predicts that coronal EUV propagating fronts consist of both a fast magneto-acoustic wave and a nonwave component. We find that the morphologies, propagation behaviors, and kinematic features of the two EUV propagating fronts are completely different from each other. The fast magneto-acoustic wave fronts are almost isotropic. They travel continuously from the flaring region across multiple magnetic polarities to global distances. On the other hand, the slow nonwave fronts appear as anisotropic and sequential patches of EUV brightening. Each patch propagates locally in the magnetic domains where the magnetic field lines connect to the bottom boundary and stops at the magnetic domain boundaries. Within each magnetic domain, the velocities of the slow patchy nonwave component are an order of magnitude lower than that of the fast-wave component. However, the patches of the slow EUV propagating front can jump from one magnetic domain to a remote one. The velocities of such a transit between different magnetic domains are about one-third to one-half of those of the fast-wave component. The results show that the velocities of the nonwave component, both within one magnetic domain and between different magnetic domains, are highly nonuniform due to the inhomogeneity of the magnetic field in the lower atmosphere.

  16. The Influence of the Extreme Ultraviolet Spectral Energy Distribution on the Structure and Composition of the Upper Atmosphere of Exoplanets

    NASA Astrophysics Data System (ADS)

    Guo, J. H.; Ben-Jaffel, Lotfi

    2016-02-01

    By varying the profiles of stellar extreme ultraviolet (EUV) spectral energy distributions (SEDs), we tested the influences of stellar EUV SEDs on the physical and chemical properties of an escaping atmosphere. We apply our model to study four exoplanets: HD 189733b, HD 209458b, GJ 436b, and Kepler-11b. We find that the total mass loss rates of an exoplanet, which are determined mainly by the integrated fluxes, are moderately affected by the profiles of the EUV SED, but the composition and species distributions in the atmosphere can be dramatically modified by the different profiles of the EUV SED. For exoplanets with a high hydrodynamic escape parameter (λ), the amount of atomic hydrogen produced by photoionization at different altitudes can vary by one to two orders of magnitude with the variation of stellar EUV SEDs. The effect of photoionization of H is prominent when the EUV SED is dominated by the low-energy spectral region (400–900 Å), which pushes the transition of H/H+ to low altitudes. In contrast, the transition of H/H+ moves to higher altitudes when most photons are concentrated in the high-energy spectral region (50–400 Å). For exoplanets with a low λ, the lower temperatures of the atmosphere make many chemical reactions so important that photoionization alone can no longer determine the composition of the escaping atmosphere. For HD 189733b, it is possible to explain the time variability of Lyα between 2010 and 2011 by a change in the EUV SED of the host K-type star, yet invoking only thermal H i in the atmosphere.

  17. Spectral observations of the extreme ultraviolet background.

    PubMed

    Labov, S E; Bowyer, S

    1991-04-20

    A grazing incidence spectrometer was designed to measure the diffuse extreme ultraviolet background. It was flown on a sounding rocket, and data were obtained on the diffuse background between 80 and 650 angstroms. These are the first spectral measurements of this background below 520 angstroms. Several emission features were detected, including interplanetary He I 584 angstroms emission and geocoronal He II 304 angstroms emission. Other features observed may originate in a hot ionized interstellar gas, but if this interpretation is correct, gas at several different temperatures is present. The strongest of these features is consistent with O V emission at 630 angstroms. This emission, when combined with upper limits for other lines, restricts the temperature of this component to 5.5 < log T < 5.7, in agreement with temperatures derived from O VI absorption studies. A power-law distribution of temperatures is consistent with this feature only if the power-law coefficient is negative, as is predicted for saturated evaporation of clouds in a hot medium. In this case, the O VI absorption data confine the filling factor of the emission of f < or = 4% and the pressure to more than 3.7 x 10(4) cm-3 K, substantially above ambient interstellar pressure. Such a pressure enhancement has been predicted for clouds undergoing saturated evaporation. Alternatively, if the O V emission covers a considerable fraction of the sky, it would be a major source of ionization. A feature centered at about 99 angstroms is well fitted by a cluster of Fe XVIII and Fe XIX lines from gas at log T = 6.6-6.8. These results are consistent with previous soft X-ray observations with low-resolution detectors. A feature found near 178 angstroms is consistent with Fe X and Fe XI emission from gas at log T = 6; this result is consistent with results from experiments employing broad-band soft X-ray detectors.

  18. Extending the path for efficient extreme ultraviolet sources for advanced nanolithography

    SciTech Connect

    Sizyuk, Tatyana; Hassanein, Ahmed

    2015-09-15

    Developing efficient light sources for extreme ultraviolet (EUV) lithography is one of the most important problems of high volume manufacturing (HVM) of the next generation computer chips. Critical components of this technology are continued to face challenges in the demanding performance for HVM. Current investigations of EUV and beyond EUV (BEUV) community are focused on the dual-pulse laser produced plasma (LPP) using droplets of mass-limited targets. Two main objectives as well as challenges in the optimization of these light sources are related to enhancement of the conversion efficiency (CE) of the source and increase components lifetime of the collector optical system. These require significant experimental and computer simulation efforts. These requirements call for fine detail analysis of various plasma physics processes involved in laser target interactions and their effects on source optimization. We continued to enhance our comprehensive HEIGHTS simulation package and upgrade our CMUXE laboratories to study and optimize the efficiency of LPP sources. Integrated modeling and experimental research were done to both benchmark simulation results and to make projections and realistic predictions of the development path for powerful EUVL devices for HVM requirements. We continued the detail analysis of dual-pulse laser systems using various laser wavelengths and delay times between the two pulses. We showed that the efficiency of EUV sources can be improved utilizing the higher harmonics of Nd:YAG laser for the prepulse and the first harmonics for the main pulse, while still having lower efficiency than the combination involving CO{sub 2} laser in the range of parameters studied in this case. The differences in optimization process as well as in the source characteristics for two combinations of laser wavelengths were analyzed based on details of atomic and hydrodynamics processes during the evolving plasma plumes.

  19. Analysis of the operation and plasma dynamics of extreme- ultraviolet and soft x-ray lasers

    NASA Astrophysics Data System (ADS)

    Bender, Howard Albert, III

    Extending lasing action into the extreme ultraviolet and soft x-ray regions of the electromagnetic spectrum has been a natural progression in the continuing development of short wavelength radiation sources. However fundamental difficulties with the media used to produce short wavelength lasers has in general hindered the widespread development and use of such lasers in applications. Up to now all EUV and soft x-ray lasers have operated with plasmas as the gain medium to support lasing. This is a general requirement imposed by (1) the characteristics of short wavelength radiation as it originates from highly energetic atomic transitions and (2) the fundamental aspects of lasing at these wavelengths. Thus the plasma environment has been the defining characteristic in achieving lasing in the EUV and soft x-ray spectral regions. This thesis presents investigations into two types of EUV/Soft x-ray lasers that describe the operation and associated plasma dynamics of these devices. The first is a numerical investigation into a recombination pumped x-ray laser at 13.5 nm operating in a Li plasma. Using a collisional-radiative model of the atomic system, simulations were performed to determine the plasma conditions necessary to produce gain that were observed in reported experiments. The second investigation is the experimental development and operation of a capillary discharge driven laser operating at 46.9 nm in Ar. This device is a new generation of EUV/Soft X-ray laser based on a small scale driver system. The first interferometric probing experiments of this device will be discussed and related to the plasma dynamics of the capillary discharge.

  20. EVIDENCE FOR THE WAVE NATURE OF AN EXTREME ULTRAVIOLET WAVE OBSERVED BY THE ATMOSPHERIC IMAGING ASSEMBLY ON BOARD THE SOLAR DYNAMICS OBSERVATORY

    SciTech Connect

    Shen Yuandeng; Liu Yu

    2012-07-20

    Extreme-ultraviolet (EUV) waves have been found for about 15 years. However, significant controversy remains over their physical natures and origins. In this paper, we report an EUV wave that was accompanied by an X1.9 flare and a partial halo coronal mass ejection (CME). Using high temporal and spatial resolution observations taken by the Solar Dynamics Observatory and the Solar-TErrestrial RElations Observatory, we are able to investigate the detailed kinematics of the EUV wave. We find several arguments that support the fast-mode wave scenario. (1) The speed of the EUV wave (570 km s{sup -1}) is higher than the sound speed of the quiet-Sun corona. (2) Significant deceleration of the EUV wave (-130 m s{sup -2}) is found during its propagation. (3) The EUV wave resulted in the oscillations of a loop and a filament along its propagation path, and a reflected wave from the polar coronal hole is also detected. (4) Refraction or reflection effect is observed when the EUV wave was passing through two coronal bright points. (5) The dimming region behind the wavefront stopped to expand when the wavefront started to become diffuse. (6) The profiles of the wavefront exhibited a dispersive nature, and the magnetosonic Mach number of the EUV wave derived from the highest intensity jump is about 1.4. In addition, triangulation indicates that the EUV wave propagated within a height range of about 60-100 Mm above the photosphere. We propose that the EUV wave observed should be a nonlinear fast-mode magnetosonic wave that propagated freely in the corona after it was driven by the CME expanding flanks during the initial period.

  1. STEREO's Extreme UltraViolet Imager (EUVI)

    NASA Technical Reports Server (NTRS)

    2007-01-01

    At a pixel resolution of 2048x2048, the STEREO EUVI instrument provides views of the Sun in ultraviolet light that rivals the full-disk views of SOHO/EIT. This image is through the 171 Angstrom (ultraviolet) filter which is characteristic of iron ions (missing eight and nine electrons) at 1 million degrees. There is a short data gap in the latter half of the movie that creates a freeze and then jump in the data view. This is a movie of the Sun in 171 Angstrom ultraviolet light. The time frame is late January, 2007

  2. Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2013-04-01

    As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of

  3. Extreme Ultraviolet Late-Phase Flares: Before and During the Solar Dynamics Observatory Mission

    NASA Astrophysics Data System (ADS)

    Woods, Thomas N.

    2014-09-01

    The solar extreme-ultraviolet (EUV) observations from the Solar Dynamics Observatory (SDO) have revealed interesting characteristics of warm coronal emissions, such as Fe xvi 335 Å emission, which peak soon after the hot coronal X-ray emissions peak during a flare and then sometimes peak for a second time hours after the X-ray flare peak. This flare type, with two warm coronal emission peaks but only one X-ray peak, has been named the EUV late phase (Woods et al., Astrophys. J. 739, 59, 2011). These flares have the distinct properties of i) having a complex magnetic-field structure with two initial sets of coronal loops, with one upper set overlaying a lower set, ii) having an eruptive flare initiated in the lower set and disturbing both loop sets, iii) having the hot coronal emissions emitted only from the lower set in conjunction with the X-ray peak, and iv) having the first peak of the warm coronal emissions associated with the lower set and its second peak emitted from the upper set many minutes to hours after the first peak and without a second X-ray enhancement. The disturbance of the coronal loops by the eruption is at about the same time, but the relaxation and cooling down of the heated coronal loops during the post-flare reconnections have different time scales with the longer, upper loops being significantly delayed from the lower loops. The difference in these cooling time scales is related to the difference between the two peak times of the warm coronal emission and is also apparent in the decay profile of the X-ray emissions having two distinct decays, with the first decay slope being steeper (faster) and the delayed decay slope being smaller (slower) during the time of the warm-coronal-emission second peak. The frequency and relationship of the EUV late-phase decay times between the Fe xvi 335 Å two flare peaks and X-ray decay slopes are examined using three years of SDO/ EUV Variability Experiment (EVE) data, and the X-ray dual-decay character is

  4. Extreme ultraviolet light curves of UZ Fornacis: Evidence for accretion stream absorption and vertical extent of the accretion spot

    NASA Technical Reports Server (NTRS)

    Warren, John K.; Sirk, Martin M.; Vallerga, John V.

    1995-01-01

    We report on two pointed observations of UZ For carried out by the imaging photometers aboard the Extreme Ultraviolet Explorer (EUVE), one as part of the EUVE Right Angle Program and one as an off-axis source during a guest observation. Both observations lasted approximately 3 days and covered a total of 72 orbits of the UZ For binary providing multiple coverage of all the orbital phases of UZ For. The resulting high signal-to-noise phase-folded light curve strongly constrains the emission and absorption geometry of UZ For. We have detected a narrow absorption dip that we attribute to the accretion stream at the location of the stagnation region many white dwarf radii away from the accretion spot and have also detected a broad dip caused by absorption much closer to the white dwarf surface. Both absorption effects are variable in time and phase. Based on the timescales of M-star eclipse ingress and egress, the angular spot size is constrained to be less than 5 deg; thus the ratio of spot area to white dwarf surface area is less than or equal to 0.0005. To explain the light curve phase duration given this small angular spot size, the extreme-ultraviolet (EUV) accretion spot must be raised vertically by approximately 5% of the white dwarf radius.

  5. A study of extreme-ultraviolet emission from cataclysmic variables

    NASA Technical Reports Server (NTRS)

    Polidan, Ronald S.; Mauche, Christopher W.; Wade, Richard A.

    1990-01-01

    Voyager far- and extreme UV spectrophotometric observations of five cataclysmic variables (the dwarf novae SS Cyg and VW Hyi and the novalike variables V3885 Sgr, RW Sex, and IX Vel) are combined with neutral hydrogen column densities derived from the curve-of-growth analysis of interstellar absorption lines in high-resolution IUE spectra to place upper limits on the emitted flux in the 600-700 A EUV band. The Voyager observations of VW Hyi were obtained during both normal and superoutbursts. Detailed accretion disk model calculations show that most of the 600-700 A flux in these systems should originate in the inner accretion disk rather than in the boundary layer. For VW Hyi, the low neutral hydrogen column and excellent Voyager superoutburst data place the observed upper limit to the 600-700 A flux well below the expected EUV flux from the model calculations.

  6. Carbon contamination topography analysis of EUV masks

    SciTech Connect

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  7. Extreme Ultraviolet Lithography - Reflective Mask Technology

    SciTech Connect

    Walton, C.C.; Kearney, P.A.; Mirkarimi, P.B.; Bowers, J.M.; Cerjan, C.; Warrick, A.L.; Wilhelmsen, K.; Fought, E.; Moore, C.; Larson, C.; Baker, S.; Burkhart, S.C.; Hector, S.D.

    2000-05-09

    EUVL mask blanks consist of a distributed Bragg reflector made of 6.7nm-pitch bi-layers of MO and Si deposited upon a precision Si or glass substrate. The layer deposition process has been optimized for low defects, by application of a vendor-supplied but highly modified ion-beam sputter deposition system. This system is fully automated using SMIF technology to obtain the lowest possible environmental- and handling-added defect levels. Originally designed to coat 150mm substrates, it was upgraded in July, 1999 to 200 mm and has coated runs of over 50 substrates at a time with median added defects >100nm below 0.05/cm{sup 2}. These improvements have resulted from a number of ion-beam sputter deposition system modifications, upgrades, and operational changes, which will be discussed. Success in defect reduction is highly dependent upon defect detection, characterization, and cross-platform positional registration. We have made significant progress in adapting and extending commercial tools to this purpose, and have identified the surface scanner detection limits for different defect classes, and the signatures of false counts and non-printable scattering anomalies on the mask blank. We will present key results and how they have helped reduce added defects. The physics of defect reduction and mitigation is being investigated by a program on multilayer growth over deliberately placed perturbations (defects) of varying size. This program includes modeling of multilayer growth and modeling of defect printability. We developed a technique for depositing uniformly sized gold spheres on EUVL substrates, and have studied the suppression of the perturbations during multilayer growth under varying conditions. This work is key to determining the lower limit of critical defect size for EUV Lithography. We present key aspects of this work. We will summarize progress in all aspects of EUVL mask blank development, and present detailed results on defect reduction and mask blank

  8. Extreme ultra-violet burst, particle heating, and whistler wave emission in fast magnetic reconnection induced by kink-driven Rayleigh-Taylor instability

    NASA Astrophysics Data System (ADS)

    Chai, Kil-Byoung; Zhai, Xiang; Bellan, Paul M.

    2016-03-01

    A spatially localized energetic extreme ultra-violet (EUV) burst is imaged at the presumed position of fast magnetic reconnection in a plasma jet produced by a coaxial helicity injection source; this EUV burst indicates strong localized electron heating. A circularly polarized high frequency magnetic field perturbation is simultaneously observed at some distance from the reconnection region indicating that the reconnection emits whistler waves and that Hall dynamics likely governs the reconnection. Spectroscopic measurement shows simultaneous fast ion heating. The electron heating is consistent with Ohmic dissipation, while the ion heating is consistent with ion trajectories becoming stochastic.

  9. Compact sources of EUV radiation

    NASA Technical Reports Server (NTRS)

    Paresce, F.

    1977-01-01

    Contrary to classical theoretical expectations extreme ultraviolet emissions from a number of stellar objects have been recently discovered. A combined EUV and optical study of these sources has revealed a wealth of new information on stellar structure and evolution especially for what regards the transition stage between planetary nebulae and white dwarfs. The current status of research in this field is reviewed with emphasis on the impact these observations are having on our view of the later stages of stellar evolution and on the future possibility that could be awaiting a sensitive all sky survey of the EUV spectrum.

  10. Electron-induced interaction of selected hydrocarbons with TiO2 surfaces: the relevance to extreme ultraviolet lithography.

    PubMed

    Yakshinskiy, B V; Zalkind, S; Bartynski, R A; Caudillo, R

    2010-03-01

    The aim of this work is to characterize desorption induced by electronic transition processes that affect the reflectivity of TiO2-capped multilayer mirrors used in extreme ultraviolet (EUV) lithography. A low energy electron beam is employed to mimic excitations initiated by EUV radiation. Temperature programmed desorption, x-ray photoelectron spectroscopy, and low energy ion scattering are used to analyze the surface reactions. Carbon film growth on the TiO2(011) crystalline surface is measured during 10-100 eV electron bombardment in benzene or methyl methacrylate vapor over a wide range of pressures and temperatures near 300 K. Low energy secondary electrons excited by EUV photons contribute substantially to the carbon accumulation on clean TiO2 cap layers. For benzene on clean TiO2, secondary electron effects dominate in the initial stages of carbon accumulation, whereas for C-covered TiO2, direct excitations appear to dominate. We report on the adsorption energy, the steady-state coverage of the molecules on the surface and the cross sections for electron-stimulated dissociation: all key parameters for understanding and modeling the processes relating to the EUV lithography mirrors.

  11. DIFFRACTION, REFRACTION, AND REFLECTION OF AN EXTREME-ULTRAVIOLET WAVE OBSERVED DURING ITS INTERACTIONS WITH REMOTE ACTIVE REGIONS

    SciTech Connect

    Shen Yuandeng; Liu Yu; Zhao Ruijuan; Tian Zhanjun; Su Jiangtao; Li Hui; Ichimoto, Kiyoshi; Shibata, Kazunari

    2013-08-20

    We present observations of the diffraction, refraction, and reflection of a global extreme-ultraviolet (EUV) wave propagating in the solar corona. These intriguing phenomena are observed when the wave interacts with two remote active regions, and together they exhibit properties of an EUV wave. When the wave approached AR11465, it became weaker and finally disappeared in the active region, but a few minutes later a new wavefront appeared behind the active region, and it was not concentric with the incoming wave. In addition, a reflected wave was also simultaneously observed on the wave incoming side. When the wave approached AR11459, it transmitted through the active region directly and without reflection. The formation of the new wavefront and the transmission could be explained with diffraction and refraction effects, respectively. We propose that the different behaviors observed during the interactions may be caused by different speed gradients at the boundaries of the two active regions. We find that the EUV wave formed ahead of a group of expanding loops a few minutes after the start of the loops' expansion, which represents the initiation of the associated coronal mass ejection (CME). Based on these results, we conclude that the EUV wave should be a nonlinear magnetosonic wave or shock driven by the associated CME, which propagated faster than the ambient fast mode speed and gradually slowed down to an ordinary linear wave. Our observations support the hybrid model that includes both fast wave and slow non-wave components.

  12. Characteristics of extreme ultraviolet emission from mid-infrared laser-produced rare-earth Gd plasmas.

    PubMed

    Higashiguchi, Takeshi; Li, Bowen; Suzuki, Yuhei; Kawasaki, Masato; Ohashi, Hayato; Torii, Shuichi; Nakamura, Daisuke; Takahashi, Akihiko; Okada, Tatsuo; Jiang, Weihua; Miura, Taisuke; Endo, Akira; Dunne, Padraig; O'Sullivan, Gerry; Makimura, Tetsuya

    2013-12-30

    We characterize extreme ultraviolet (EUV) emission from mid-infrared (mid-IR) laser-produced plasmas (LPPs) of the rare-earth element Gd. The energy conversion efficiency (CE) and the spectral purity in the mid-IR LPPs at λL = 10.6 μm were higher than for solid-state LPPs at λL = 1.06 μm, because the plasma produced is optically thin due to the lower critical density, resulting in a CE of 0.7%. The peak wavelength remained fixed at 6.76 nm for all laser intensities studied. Plasma parameters at a mid-IR laser intensity of 1.3×10(11) W/cm(2) was also evaluated by use of the hydrodynamic simulation code to produce the EUV emission at 6.76 nm. PMID:24514779

  13. Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

    SciTech Connect

    Naulleau, Patrick

    2009-05-25

    As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern. Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV microfield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.

  14. Sub-diffraction-limited multilayer coatings for the 0.3-NA Micro-Exposure Tool for extreme ultraviolet lithography

    SciTech Connect

    Soufli, R; Hudyma, R M; Spiller, E; Gullikson, E M; Schmidt, M A; Robinson, J C; Baker, S L; Walton, C C; Taylor, J S

    2007-01-03

    This manuscript discusses the multilayer coating results for the primary and secondary mirrors of the Micro Exposure Tool (MET): a 0.30-numerical aperture (NA) lithographic imaging system with 200 x 600 {micro}m{sup 2} field of view at the wafer plane, operating in the extreme ultraviolet (EUV) wavelength region. Mo/Si multilayers were deposited by DC-magnetron sputtering on large-area, curved MET camera substrates, and a velocity modulation technique was implemented to consistently achieve multilayer thickness profiles with added figure errors below 0.1 nm rms to achieve sub-diffraction-limited performance. This work represents the first experimental demonstration of sub-diffraction-limited multilayer coatings for high-NA EUV imaging systems.

  15. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources

    DOEpatents

    Kublak, G.D.; Richardson, M.C.

    1996-11-19

    Method and apparatus for producing extreme ultraviolet (EUV) and soft x-ray radiation from an ultra-low debris plasma source are disclosed. Targets are produced by the free jet expansion of various gases through a temperature controlled nozzle to form molecular clusters. These target clusters are subsequently irradiated with commercially available lasers of moderate intensity (10{sup 11}--10{sup 12} watts/cm{sup 2}) to produce a plasma radiating in the region of 0.5 to 100 nanometers. By appropriate adjustment of the experimental conditions the laser focus can be moved 10--30 mm from the nozzle thereby eliminating debris produced by plasma erosion of the nozzle. 5 figs.

  16. Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2014-03-01

    The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.

  17. Thin absorber extreme ultraviolet photomask based on Ni-TaN nanocomposite material.

    PubMed

    Hay, Darrick; Bagge, Patrick; Khaw, Ian; Sun, Lei; Wood, Obert; Chen, Yulu; Kim, Ryoung-Han; Qi, Zhengqing John; Shi, Zhimin

    2016-08-15

    We study the use of random nanocomposite material as a photomask absorber layer for the next generation of extreme ultraviolet (EUV) lithography. By introducing nickel nanoparticles (NPs) randomly into a TaN host, the nanocomposite absorber layer can greatly reduce the reflectivity as compared with the standard TaN layer of the same thickness. Finite integral simulations show that the reduction in the reflectivity is mainly due to the enhanced absorption by the Ni NPs. The fluctuation in reflectivity induced by scattering and random position of the NPs is found to be on the order of 0.1%. Based on these observations, we build an effective medium model for the nanocomposite absorber layer and use the transfer matrix method to identify optimal absorber designs that utilize cavity effects to reduce the required volume fraction of Ni NPs. We further perform a process simulation and show that our approach can greatly reduce the HV bias in the lithography process. PMID:27519090

  18. Laboratory calibration of density-dependent lines in the extreme ultraviolet spectral region

    SciTech Connect

    Lepson, J. K.; Beiersdorfer, P.; Gu, M. F.; Desai, P.; Bitter, M.; Roquemore, L.; Reinke, M. L.

    2012-05-25

    We have been making spectral measurements in the extreme ultraviolet (EUV) from different laboratory sources in order to investigate the electron density dependence of various astrophysically important emission lines and to test the atomic models underlying the diagnostic line ratios. The measurement are being performed at the Livermore EBIT-I electron beam ion trap, the National Spherical Torus Experiment (NSTX) at Princeton, and the Alcator C-Mod tokamak at the Massachusetts Institute of Technology, which together span an electron density of four orders of magnitude and which allow us to test the various models at high and low density limits. Here we present measurements of Fe XXII and Ar XIV, which include new data from an ultra high resolution ({lambda}/{Delta}{lambda} >4000) spectrometer at the EBIT-I facility. We found good agreement between the measurements and modeling calculations for Fe XXII, but poorer agreement for Ar XIV.

  19. Extreme ultraviolet lithography for 0.1{micro}m devices

    SciTech Connect

    Vaidya, S; Sweeney, D W; Stullen, R; Attwood, D

    1999-04-27

    Extreme Ultraviolet Lithography (EUVL) has emerged as one of the leading successors to optics for 0.1{micro}m IC fabrication. Its strongest attribute is the potential to scale to much finer resolution at high throughput. As such, this technique could meet the lithography needs for Si ULSI down to fundamental device limits. In the US, Lawrence Livermore, Sandia and Lawrence Berkeley Laboratories are participating in an industry funded research effort to evolve EUV technology and build a prototype camera for lithographic exposure. More recently, both Europe and Japan have initiated government/industry sponsored programs in EUVL development. This talk focuses on the program successes to date, and highlights some of the challenges that still lie ahead.

  20. Extreme Ultraviolet Lithography for 0.1 {micro}m Devices

    SciTech Connect

    Vaidya, S.; Sweeney, D.W.; Stulen, R.; Attwood, D.

    1999-07-07

    Extreme Ultraviolet Lithography (EUVL) has emerged as one of the leading successors to optics for 0.1 {micro}m IC fabrication. Its strongest attribute is the potential to scale to much finer resolution at high throughput. As such, this technique could meet the lithography needs for Si ULSI down to fundamental device limits. In the US, Lawrence Livermore, Sandia, and Lawrence Berkeley National Laboratories are participating in an industry funded research effort to evolve EUV technology and build a prototype camera for lithographic exposure. More recently, both Europe and Japan have initiated government/industry sponsored programs in EUVL development. This talk will focus on our program successes to date, and highlight some of the challenges that still lie ahead.

  1. Evaluation of multilayer defect repair viability and protection techniques for extreme ultraviolet masks

    NASA Astrophysics Data System (ADS)

    Isogawa, Takeshi; Seki, Kazunori; Lawliss, Mark; Qi, Zhengqing John; Rankin, Jed; Akima, Shinji

    2016-04-01

    A variety of repairs were conducted on extreme ultraviolet (EUV) multilayer, including protection against pattern degradation in manufactural use, in order to evaluate feasibility of multilayer repair and subsequent protection schemes. The efficacy of postrepair protection techniques is evaluated to determine the lifetime of multilayer repairs. Simulations were used to select the optimal material thicknesses for repair protection, and the simulation results are verified with the lithographic results. The results showed a high correlation coefficient. Finally, all repaired sites were cleaned multiple times to quantify repair durability and impact on wafer critical dimension (CD). Aerial imaging of the repair sites before and after cleans showed a dramatic degradation of wafer CD. However, we show that applying a surface protection material after multilayer repair successfully mitigates the influence of multilayer degradation during extensive manufacturing operations.

  2. The diffuse extreme-ultraviolet background - Constraints on hot coronal plasma

    NASA Technical Reports Server (NTRS)

    Paresce, F.; Stern, R.

    1981-01-01

    The Apollo-Soyuz data and data reported by Cash et al. (1976) have been reanalyzed in terms of both isothermal models and temperature distribution models. In the latter case, a power-law form is assumed for the relation between emission measure and temperature. A new upper limit on diffuse flux in the 20-73 eV band derived from Apollo-Soyuz observations made in the earth's shadow has been incorporated in the calculation. In the considered investigation the results of the new analysis are presented and the implications for the physical properties of the hot component of the interstellar medium are discussed. The analysis of the Berkeley extreme ultraviolet (EUV) diffuse background measurements using either isothermal or power law temperature distribution models for the emitting plasma indicates excellent qualitative agreement with hard X-ray data that suggest the sun to be immersed in a hot plasma that pervades most of space out to approximately 100 pc.

  3. Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool

    SciTech Connect

    Naulleau, Patrick; Anderson, Christopher N.; Chiu, Jerrin; Dean, Kim; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Hoef, Brian; Jones, Gideon; Koh, Chawon; La Fontaine, Bruno; Ma, Andy; Montgomery, Warren; Niakoula, Dimitra; Park, Joo-On; Wallow, Tom; Wurm, Stefan

    2008-09-02

    Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the 0.3 numerical aperture SEMATECH Berkeley MET operating as a resist and mask test center. Here they present an update on the tool summarizing some of the latest test and characterization results. they provide an update on the long-term aberration stability of the tool and present line-space imaging in chemically amplified photoresist down to the 20-nm half-pitch level. Although resist development has shown substantial progress in the area of resolution, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of mask contributors to the LER observed from the SEMATECH Berkeley microfield tool.

  4. True covariance simulation of the EUVE (extreme ultra violet explorer) update filter

    NASA Technical Reports Server (NTRS)

    Bar-Itzhack, I. Y.; Harman, R. R.

    1990-01-01

    This paper presents a covariance analysis of the performance and sensitivity of the attitude determination Extended Kalman Filter (EKF) used by the onboard computer (OBC) of the Extreme Ultra Violet Explorer (EUVE) spacecraft. The linearized dynamics and measurement equations of the error states are used in formulating the 'truth model' describing the order of the systems involved. The 'design model' used by the OBC EKF is then obtained by reducing the order of the truth model. The covariance matrix of the EKF which uses the reduced order model is not the correct covariance of the EKF estimation error. A 'true covariance analysis' has to be carried out in order to evaluate the correct accuracy of the OBC generated estimates. The results of such analysis are presented which indicate both the performance and the sensitivity of the OBC EKF.

  5. Low-cost method for producing extreme ultraviolet lithography optics

    DOEpatents

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  6. PRODUCTION OF THE EXTREME-ULTRAVIOLET LATE PHASE OF AN X CLASS FLARE IN A THREE-STAGE MAGNETIC RECONNECTION PROCESS

    SciTech Connect

    Dai, Y.; Ding, M. D.; Guo, Y.

    2013-08-20

    We report on observations of an X class flare on 2011 September 6 by the instruments on board the Solar Dynamics Observatory. The flare occurs in a complex active region with multiple polarities. The Extreme-Ultraviolet (EUV) Variability Experiment observations in the warm coronal emission reveal three enhancements, the third of which corresponds to an EUV late phase. The three enhancements have a one-to-one correspondence to the three stages in flare evolution identified by the spatially resolved Atmospheric Imaging Assembly observations, which are characterized by a flux rope eruption, a moderate filament ejection, and the appearance of EUV late phase loops, respectively. The EUV late phase loops are spatially and morphologically distinct from the main flare loops. Multi-channel analysis suggests the presence of a continuous but fragmented energy injection during the EUV late phase resulting in the warm corona nature of the late phase loops. Based on these observational facts, we propose a three-stage magnetic reconnection scenario to explain the flare evolution. Reconnections in different stages involve different magnetic fields but show a casual relationship between them. The EUV late phase loops are mainly produced by the least energetic magnetic reconnection in the last stage.

  7. Reflectance enhancement in the extreme ultraviolet and soft x rays by means of multilayers with more than two materials.

    PubMed

    Larruquert, Juan I

    2002-02-01

    Sub-quarterwave multilayer coatings with more than two different materials are shown to provide a reflectance enhancement compared with the standard two-material multilayer coatings when reflectance is limited by material absorption. A remarkable reflectance enhancement is obtained when the materials in the multilayer are moderately absorbing. A simple rule based on the material optical constants is provided to select the most suitable materials for the multilayer and to arrange the materials in the correct sequence in order to obtain the highest possible reflectance. It is shown that sub-quarterwave multilayers generalize the concept of multilayers, of which the standard two-material multilayers are a particular case. Various examples illustrate the benefit of sub-quarter-wave multilayer coatings for highest reflectance in the extreme ultraviolet. Applications for sub-quarterwave multilayer coatings are envisaged for astronomy in the extreme ultraviolet (EUV) and soft x rays and also for future EUY lithography.

  8. Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography.

    PubMed

    Tarrio, Charles; Grantham, Steven; Squires, Matthew B; Vest, Robert E; Lucatorto, Thomas B

    2003-01-01

    Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer extreme-ultraviolet stepper mirrors require the highest attainable reflectivity at 13 nm (nearly 70 %), but the central wavelength of the reflectivity of these mirrors must be measured with a wavelength repeatability of 0.001 nm and the peak reflectivity of the reflective masks with a repeatability of 0.12 %. We report on two upgrades of our NIST/DARPA Reflectometry Facility that have given us the ability to achieve 0.1 % repeatability and 0.3 % absolute uncertainty in our reflectivity measurements. A third upgrade, a monochromator with thermal and mechanical stability for improved wavelength repeatability, is currently in the design phase.

  9. Extreme ultraviolet emission and confinement of tin plasmas in the presence of a magnetic field

    SciTech Connect

    Roy, Amitava E-mail: aroy@barc.gov.in; Murtaza Hassan, Syed; Harilal, Sivanandan S.; Hassanein, Ahmed; Endo, Akira; Mocek, Tomas

    2014-05-15

    We investigated the role of a guiding magnetic field on extreme ultraviolet (EUV) and ion emission from a laser produced Sn plasma for various laser pulse duration and intensity. For producing plasmas, planar slabs of pure Sn were irradiated with 1064 nm, Nd:YAG laser pulses with varying pulse duration (5–15 ns) and intensity. A magnetic trap was fabricated with the use of two neodymium permanent magnets which provided a magnetic field strength ∼0.5 T along the plume expansion direction. Our results indicate that the EUV conversion efficiency do not depend significantly on applied axial magnetic field. Faraday Cup ion analysis of Sn plasma show that the ion flux reduces by a factor of ∼5 with the application of an axial magnetic field. It was found that the plasma plume expand in the lateral direction with peak velocity measured to be ∼1.2 cm/μs and reduced to ∼0.75 cm/μs with the application of an axial magnetic field. The plume expansion features recorded using fast photography in the presence and absence of 0.5 T axial magnetic field are simulated using particle-in-cell code. Our simulation results qualitatively predict the plasma behavior.

  10. Thermal conduction properties of Mo/Si multilayers for extreme ultraviolet optics

    NASA Astrophysics Data System (ADS)

    Bozorg-Grayeli, Elah; Li, Zijian; Asheghi, Mehdi; Delgado, Gil; Pokrovsky, Alexander; Panzer, Matthew; Wack, Daniel; Goodson, Kenneth E.

    2012-10-01

    Extreme ultraviolet (EUV) lithography requires nanostructured optical components, whose reliability can be influenced by radiation absorption and thermal conduction. Thermal conduction analysis is complicated by sub-continuum electron and phonon transport and the lack of thermal property data. This paper measures and interprets thermal property data, and their evolution due to heating exposure, for Mo/Si EUV mirrors with 6.9 nm period and Mo/Si thickness ratios of 0.4/0.6 and 0.6/0.4. We use time-domain thermoreflectance and the 3ω method to estimate the thermal resistance between the Ru capping layer and the Mo/Si multilayers (RRu-Mo/Si = 1.5 m2 K GW-1), as well as the out-of-plane thermal conductivity (kMo/Si 1.1 W m-1 K-1) and thermal anisotropy (η = 13). This work also reports the impact of annealing on thermal conduction in a co-deposited MoSi2 layer, increasing the thermal conductivity from 1.7 W m-1 K-1 in the amorphous phase to 2.8 W m-1 K-1 in the crystalline phase.

  11. Analysis of buried interfaces in multilayer mirrors using grazing incidence extreme ultraviolet reflectometry near resonance edges.

    PubMed

    Sertsu, M G; Nardello, M; Giglia, A; Corso, A J; Maurizio, C; Juschkin, L; Nicolosi, P

    2015-12-10

    Accurate measurements of optical properties of multilayer (ML) mirrors and chemical compositions of interdiffusion layers are particularly challenging to date. In this work, an innovative and nondestructive experimental characterization method for multilayers is discussed. The method is based on extreme ultraviolet (EUV) reflectivity measurements performed on a wide grazing incidence angular range at an energy near the absorption resonance edge of low-Z elements in the ML components. This experimental method combined with the underlying physical phenomenon of abrupt changes of optical constants near EUV resonance edges enables us to characterize optical and structural properties of multilayers with high sensitivity. A major advantage of the method is to perform detailed quantitative analysis of buried interfaces of multilayer structures in a nondestructive and nonimaging setup. Coatings of Si/Mo multilayers on a Si substrate with period d=16.4  nm, number of bilayers N=25, and different capping structures are investigated. Stoichiometric compositions of Si-on-Mo and Mo-on-Si interface diffusion layers are derived. Effects of surface oxidation reactions and carbon contaminations on the optical constants of capping layers and the impact of neighboring atoms' interactions on optical responses of Si and Mo layers are discussed. PMID:26836858

  12. On the Importance of the Flare's Late Phase for the Solar Extreme Ultraviolet Irradiance

    NASA Technical Reports Server (NTRS)

    Woods, Thomas N.; Eparvier, Frank; Jones, Andrew R.; Hock, Rachel; Chamberlin, Phillip C.; Klimchuk, James A.; Didkovsky, Leonid; Judge, Darrell; Mariska, John; Bailey, Scott; Tobiska, W. Kent; Schrijver, Carolus J.; Webb, David F.; Warren, Harry

    2011-01-01

    The new solar extreme ultraviolet (EUV) irradiance observations from NASA Solar Dynamics Observatory (SDO) have revealed a new class of solar flares that are referred to as late phase flares. These flares are characterized by the hot 2-5 MK coronal emissions (e.g., Fe XVI 33.5 nm) showing large secondary peaks that appear many minutes to hours after an eruptive flare event. In contrast, the cool 0.7-1.5 MK coronal emissions (e.g., Fe IX 17.1 nm) usually dim immediately after the flare onset and do not recover until after the delayed second peak of the hot coronal emissions. We refer to this period of 1-5 hours after the fl amrea sin phase as the late phase, and this late phase is uniquely different than long duration flares associated with 2-ribbon flares or large filament eruptions. Our analysis of the late phase flare events indicates that the late phase involves hot coronal loops near the flaring region, not directly related to the original flaring loop system but rather with the higher post-eruption fields. Another finding is that space weather applications concerning Earth s ionosphere and thermosphere need to consider these late phase flares because they can enhance the total EUV irradiance flare variation by a factor of 2 when the late phase contribution is included.

  13. Analysis of buried interfaces in multilayer mirrors using grazing incidence extreme ultraviolet reflectometry near resonance edges.

    PubMed

    Sertsu, M G; Nardello, M; Giglia, A; Corso, A J; Maurizio, C; Juschkin, L; Nicolosi, P

    2015-12-10

    Accurate measurements of optical properties of multilayer (ML) mirrors and chemical compositions of interdiffusion layers are particularly challenging to date. In this work, an innovative and nondestructive experimental characterization method for multilayers is discussed. The method is based on extreme ultraviolet (EUV) reflectivity measurements performed on a wide grazing incidence angular range at an energy near the absorption resonance edge of low-Z elements in the ML components. This experimental method combined with the underlying physical phenomenon of abrupt changes of optical constants near EUV resonance edges enables us to characterize optical and structural properties of multilayers with high sensitivity. A major advantage of the method is to perform detailed quantitative analysis of buried interfaces of multilayer structures in a nondestructive and nonimaging setup. Coatings of Si/Mo multilayers on a Si substrate with period d=16.4  nm, number of bilayers N=25, and different capping structures are investigated. Stoichiometric compositions of Si-on-Mo and Mo-on-Si interface diffusion layers are derived. Effects of surface oxidation reactions and carbon contaminations on the optical constants of capping layers and the impact of neighboring atoms' interactions on optical responses of Si and Mo layers are discussed.

  14. A study of the mechanical vibrations of a table-top extreme ultraviolet interference nanolithography tool.

    PubMed

    Prezioso, S; De Marco, P; Zuppella, P; Santucci, S; Ottaviano, L

    2010-04-01

    A prototype low cost table-top extreme ultraviolet (EUV) laser source (1.5 ns pulse duration, lambda=46.9 nm) was successfully employed as a laboratory scale interference nanolithography (INL) tool. Interference patterns were obtained with a simple Lloyd's mirror setup. Periodic structures on Polymethylmethacrylate/Si substrates were produced on large areas (8 mm(2)) with resolutions from 400 to 22.5 nm half pitch (the smallest resolution achieved so far with table-top EUV laser sources). The mechanical vibrations affecting both the laser source and Lloyd's setup were studied to determine if and how they affect the lateral resolution of the lithographic system. The vibration dynamics was described by a statistical model based on the assumption that the instantaneous position of the vibrating mechanical parts follows a normal distribution. An algorithm was developed to simulate the process of sample irradiation under different vibrations. The comparison between simulations and experiments allowed to estimate the characteristic amplitude of vibrations that was deduced to be lower than 50 nm. The same algorithm was used to reproduce the expected pattern profiles in the lambda/4 half pitch physical resolution limit. In that limit, a nonzero pattern modulation amplitude was obtained from the simulations, comparable to the peak-to-valley height (2-3 nm) measured for the 45 nm spaced fringes, indicating that the mechanical vibrations affecting the INL tool do not represent a limit in scaling down the resolution.

  15. AN EXTREME ULTRAVIOLET WAVE ASSOCIATED WITH A MICRO-SIGMOID ERUPTION

    SciTech Connect

    Zheng Ruisheng; Jiang Yunchun; Yang Jiayan; Bi Yi; Hong Junchao; Yang Dan; Yang Bo

    2012-07-10

    Taking advantage of the high temporal and spatial resolution of the Solar Dynamics Observatory (SDO) observations, we present an extreme ultraviolet (EUV) wave associated with a micro-sigmoid eruption on 2010 October 21. The micro-sigmoid underwent a typical 'sigmoid-to-arcade' evolution via tether-cutting reconnection, accompanied by a B1.7 flare, a filament eruption, and coronal twin dimmings. In the eruption, the newly formed sigmoidal loops expanded quickly, and the expansion likely triggered an EUV wave. The wave onset was nearly simultaneous with the start of the eruption and the associated flare. The wave had a nearly circular front and propagated at a constant velocity of 270-350 km s{sup -1} with very little angular dependence. Remarkably, in some direction, the wave encountered a small loop and refracted at a higher speed. All the results provide evidences that the wave was a fast-mode magnetohydrodynamic (MHD) wave. Owing to the close temporal and spatial relationship between the wave and the expanding loops, we believe that the wave was most likely triggered by the fast expansion of the newly formed sigmoidal loops, which evolved into the leading front of the invisible micro-coronal mass ejection.

  16. Extreme ultraviolet spectroscopy of the white dwarf photosphere in AM Herculis

    SciTech Connect

    Paerels, F.; Hur, M.Y.; Mauche, C.W.; Heise, J.

    1996-06-01

    We present high-resolution spectroscopy of the stellar photospheric spectrum of the white dwarf in AM Herculis in the 75{endash}120 A band, obtained with the Short-Wavelength Spectrometer on the {ital Extreme}-{ital Ultraviolet} {ital Explorer}. We positively detect ionization edges and absorption lines from highly ionized neon (NeVI, NeVIII). Surprisingly, we do not detect absorption at the OVI 2{ital s}, 2{ital p} edges, which are expected to be the strongest spectral features in this band in an atmosphere of solar composition at the density and temperature expected for the accretion region in this object. There is evidence for limb brightening of the spectrum in egress from eclipse, indicating the presence of a temperature inversion in the X-ray/EUV photosphere. We interpret these results in the context of the classical model for the soft X-ray/EUV emission from AM Her: hard X-ray irradiation of the atmosphere by the accretion shock. {copyright} {ital 1996 The American Astronomical Society.}

  17. Characterization of an expanded-field Schwarzschild objective for extreme ultraviolet lithography

    SciTech Connect

    Kubiak, G.D.; Tichenor, D.A.; Ray-Chaudhuri, A.K.

    1994-08-01

    The performance of a new 10x-reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 {mu}m resolution over a 0.4 mm image field of view, an increase in area of a factor of 100 over previous designs. An off-set aperture, located on the convex primary, defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet (EUV) radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 450 turning mirror is used to relay the collected EUV radiation onto a near-normal reflecting mask. Multiple sets of primary and secondary elements were fabricated, matched and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave-front error within the subaperture used is within a factor of two of the design value. Images recorded in PMMA and ZEP 520 resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 {mu}m.

  18. Characterization of an expanded-field Schwarzschild objective for extreme ultraviolet lithography

    SciTech Connect

    Kubiak, G.D.; Tichenor, D.A.; Ray-Chaudhuri, A.K.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H. ); Bjorkholm, J.E.; Fetter, L.A.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Wood, O.R. II ); Waskiewicz, W.K.; White, D.L.; Windt, D.L. ); Jewell, T.E. )

    1994-11-01

    The performance of a new 10[times]-reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 [mu]m resolution over a 0.4 mm image field of view, an increase in area of a factor of 100 over previous designs. An offset aperture, located on the convex primary, defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet (EUV) radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 45[degree] turning mirror is used to relay the collected EUV radiation onto a near-normal reflecting mask. Multiple sets of primary and secondary elements were fabricated, matched, and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave-front error within the subaperture used is within a factor of 2 of the design value. Images recorded in poly(methyl methacrylate) and ZEP 520 (Nippon Zeon) resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 [mu]m.

  19. An extreme ultraviolet spectrometer experiment for the Shuttle Get Away Special Program

    NASA Technical Reports Server (NTRS)

    Conway, R. R.; Mccoy, R. P.; Meier, R. R.; Mount, G. H.; Prinz, D. K.; Young, J. M.; Carruthers, G. R.

    1984-01-01

    An extreme ultraviolet (EUV) spectrometer experiment operated successfully during the STS-7 mission in an experiment to measure the global and diurnal variation of the EUV airglow. The spectrometer is an F 3.5 Wadsworth mount with mechanical collimator, a 75 x 75 mm grating, and a bare microchannel plate detector providing a spectral resolution of 7 X FWHM. Read-out of the signal is through discrete channels or resistive anode techniques. The experiment includes a microcomputer, 20 Mbit tape recorder, and a 28V, 40 Ahr silver-zinc battery. It is the first GAS payload to use an opening door. The spectrometer's 0.1 x 4.2 deg field of view is pointed vertically out of the shuttle bay. During the STS-7 flight data were acquired continuously for a period of 5 hours and 37 minutes, providing spectra of the 570 A to 850 A wavelength region of the airglow. Five diurnal cycles of the 584 A emission of neutral helium and the 834 A emission of ionized atomic oxygen were recorded. The experiment also recorded ion events and pressure pulses associated with thruster firings. The experiment is to fly again on Mission 41-F.

  20. Atmosphere and water loss from early Mars under extreme solar wind and extreme ultraviolet conditions.

    PubMed

    Terada, Naoki; Kulikov, Yuri N; Lammer, Helmut; Lichtenegger, Herbert I M; Tanaka, Takashi; Shinagawa, Hiroyuki; Zhang, Tielong

    2009-01-01

    The upper limits of the ion pickup and cold ion outflow loss rates from the early martian atmosphere shortly after the Sun arrived at the Zero-Age-Main-Sequence (ZAMS) were investigated. We applied a comprehensive 3-D multi-species magnetohydrodynamic (MHD) model to an early martian CO(2)-rich atmosphere, which was assumed to have been exposed to a solar XUV [X-ray and extreme ultraviolet (EUV)] flux that was 100 times higher than today and a solar wind that was about 300 times denser. We also assumed the late onset of a planetary magnetic dynamo, so that Mars had no strong intrinsic magnetic field at that early period. We found that, due to such extreme solar wind-atmosphere interaction, a strong magnetic field of about approximately 4000 nT was induced in the entire dayside ionosphere, which could efficiently protect the upper atmosphere from sputtering loss. A planetary obstacle ( approximately ionopause) was formed at an altitude of about 1000 km above the surface due to the drag force and the mass loading by newly created ions in the highly extended upper atmosphere. We obtained an O(+) loss rate by the ion pickup process, which takes place above the ionopause, of about 1.5 x 10(28) ions/s during the first < or =150 million years, which is about 10(4) times greater than today and corresponds to a water loss equivalent to a global martian ocean with a depth of approximately 8 m. Consequently, even if the magnetic protection due to the expected early martian magnetic dynamo is neglected, ion pickup and sputtering were most likely not the dominant loss processes for the planet's initial atmosphere and water inventory. However, it appears that the cold ion outflow into the martian tail, due to the transfer of momentum from the solar wind to the ionospheric plasma, could have removed a global ocean with a depth of 10-70 m during the first < or =150 million years after the Sun arrived at the ZAMS.

  1. Atmosphere and water loss from early Mars under extreme solar wind and extreme ultraviolet conditions.

    PubMed

    Terada, Naoki; Kulikov, Yuri N; Lammer, Helmut; Lichtenegger, Herbert I M; Tanaka, Takashi; Shinagawa, Hiroyuki; Zhang, Tielong

    2009-01-01

    The upper limits of the ion pickup and cold ion outflow loss rates from the early martian atmosphere shortly after the Sun arrived at the Zero-Age-Main-Sequence (ZAMS) were investigated. We applied a comprehensive 3-D multi-species magnetohydrodynamic (MHD) model to an early martian CO(2)-rich atmosphere, which was assumed to have been exposed to a solar XUV [X-ray and extreme ultraviolet (EUV)] flux that was 100 times higher than today and a solar wind that was about 300 times denser. We also assumed the late onset of a planetary magnetic dynamo, so that Mars had no strong intrinsic magnetic field at that early period. We found that, due to such extreme solar wind-atmosphere interaction, a strong magnetic field of about approximately 4000 nT was induced in the entire dayside ionosphere, which could efficiently protect the upper atmosphere from sputtering loss. A planetary obstacle ( approximately ionopause) was formed at an altitude of about 1000 km above the surface due to the drag force and the mass loading by newly created ions in the highly extended upper atmosphere. We obtained an O(+) loss rate by the ion pickup process, which takes place above the ionopause, of about 1.5 x 10(28) ions/s during the first < or =150 million years, which is about 10(4) times greater than today and corresponds to a water loss equivalent to a global martian ocean with a depth of approximately 8 m. Consequently, even if the magnetic protection due to the expected early martian magnetic dynamo is neglected, ion pickup and sputtering were most likely not the dominant loss processes for the planet's initial atmosphere and water inventory. However, it appears that the cold ion outflow into the martian tail, due to the transfer of momentum from the solar wind to the ionospheric plasma, could have removed a global ocean with a depth of 10-70 m during the first < or =150 million years after the Sun arrived at the ZAMS. PMID:19216683

  2. Extreme Ultraviolet Variability Experiment (EVE) on the Solar Dynamics Observatory (SDO): Overview of Science Objectives, Instrument Design, Data Products, and Model Developments

    NASA Technical Reports Server (NTRS)

    Woods, T. N.; Eparvier, F. G.; Hock, R.; Jones, A. R.; Woodraska, D.; Judge, D.; Didkovsky, L.; Lean, J.; Mariska, J.; Warren, H.; McMullin, D.; Chamberlin, P.; Berthiaume, G.; Bailey, S.; Fuller-Rowell, T.; Sojka, J.; Tobiska, W. K.; Viereck, R.

    2010-01-01

    The highly variable solar extreme ultraviolet (EUV) radiation is the major energy input to the Earth's upper atmosphere, strongly impacting the geospace environment, affecting satellite operations, communications, and navigation. The Extreme ultraviolet Variability Experiment (EVE) onboard the NASA Solar Dynamics Observatory (SDO) will measure the solar EUV irradiance from 0.1 to 105 nm with unprecedented spectral resolution (0.1 nm), temporal cadence (ten seconds), and accuracy (20%). EVE includes several irradiance instruments: The Multiple EUV Grating Spectrographs (MEGS)-A is a grazingincidence spectrograph that measures the solar EUV irradiance in the 5 to 37 nm range with 0.1-nm resolution, and the MEGS-B is a normal-incidence, dual-pass spectrograph that measures the solar EUV irradiance in the 35 to 105 nm range with 0.1-nm resolution. To provide MEGS in-flight calibration, the EUV SpectroPhotometer (ESP) measures the solar EUV irradiance in broadbands between 0.1 and 39 nm, and a MEGS-Photometer measures the Sun s bright hydrogen emission at 121.6 nm. The EVE data products include a near real-time space-weather product (Level 0C), which provides the solar EUV irradiance in specific bands and also spectra in 0.1-nm intervals with a cadence of one minute and with a time delay of less than 15 minutes. The EVE higher-level products are Level 2 with the solar EUV irradiance at higher time cadence (0.25 seconds for photometers and ten seconds for spectrographs) and Level 3 with averages of the solar irradiance over a day and over each one-hour period. The EVE team also plans to advance existing models of solar EUV irradiance and to operationally use the EVE measurements in models of Earth s ionosphere and thermosphere. Improved understanding of the evolution of solar flares and extending the various models to incorporate solar flare events are high priorities for the EVE team.

  3. A Comparative Study of the Mass Distribution of Extreme-Ultraviolet-selected White Dwarfs

    NASA Astrophysics Data System (ADS)

    Napiwotzki, R.; Green, Paul J.; Saffer, Rex A.

    1999-05-01

    We present new determinations of effective temperature, surface gravity, and masses for a sample of 46 hot DA white dwarfs selected from the Extreme Ultraviolet Explorer (EUVE) and ROSAT Wide Field Camera bright source lists in the course of a near-infrared survey for low-mass companions. Our analysis, based on hydrogen non-LTE model atmospheres, provides a map of LTE correction vectors, which allow a thorough comparison with previous LTE studies. We find that previous studies underestimate both the systematic errors and the observational scatter in the determination of white dwarf parameters obtained via fits to model atmospheres. The structure of very hot or low-mass white dwarfs depends sensitively on their history. To compute white dwarf masses, we thus use theoretical mass-radius relations that take into account the complete evolution from the main sequence. We find a peak mass of our white dwarf sample of 0.59 Msolar, in agreement with the results of previous analyses. However, we do not confirm a trend of peak mass with temperature reported in two previous analyses. Analogous to other EUV-selected samples, we note a lack of low-mass white dwarfs and a large fraction of massive white dwarfs. Only one white dwarf is likely to have a helium core. While the lack of helium white dwarfs in our sample can be easily understood from their high cooling rate, and therefore low detection probability in our temperature range, this is not enough to explain the large fraction of massive white dwarfs. This feature very likely results from a decreased relative sample volume for low-mass white dwarfs caused by interstellar absorption in EUV-selected samples. Spectral observations reported here were obtained with the Multiple Mirror Telescope, a joint facility of the University of Arizona and the Smithsonian Institution, and with the Bok telescope at the Steward Observatory of the University of Arizona.

  4. Construction of an extreme ultraviolet polarimeter based on high-order harmonic generation

    NASA Astrophysics Data System (ADS)

    Brimhall, N.; Painter, J. C.; Turner, M.; Voronov, S. V.; Turley, R. S.; Ware, M.; Peatross, J.

    2006-08-01

    We report on the development of a polarimeter for characterizing reflective surfaces throughout the extreme ultraviolet (EUV). The instrument relies on laser high-order harmonics generated in helium, neon, or argon gas. The 800 nm laser generates a discrete comb of odd harmonics up to order 100 (wavelengths from 8-62 nm). The flux of EUV light is a couple orders of magnitude less than a synchrotron source but 30,000 times greater than a plasma source currently in operation at BYU. The polarimeter determines the reflectance from surfaces as a function of incident angle, linear light polarization orientation, and wavelength. The instrument uses a wave plate in the laser beam to control the orientation of the harmonic polarization (linear, same as laser). After reflecting from the sample, the harmonic beams are dispersed by a grating and focused onto a micro-channel plate coupled to a phosphor screen. We have demonstrated the feasibility of this project with a simple prototype instrument, which measured the reflectance of samples from 30 nm to 62 nm. The prototype demonstrated that sensitivity is sufficient for measuring reflectances as low as 0.5% for both s- and p-polarized light. The full instrument employs extensive scanning mobility as opposed to the fixed angle and fixed wavelength range of our earlier prototype. An advantage of employing harmonics as a source for EUV polarimetry is that a wide range of wavelengths can be measured simultaneously. This project represents an authentic 'work-horse' application for high-order harmonics, as opposed to merely demonstrating proof of concept.

  5. Analysis of line-and-space resist patterns with sub-20 nm half-pitch fabricated using high-numerical-aperture exposure tool of extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2016-09-01

    The resolution of resist processes for extreme ultraviolet (EUV) lithography has been steadily improved and has reached the sub-20 nm half-pitch region. Currently, the resist materials capable of resolving 11 nm half-pitch line-and-space patterns are being developed in industrial fields. In this study, the line-and-space resist patterns with sub-20 nm half-pitches were fabricated using a high-numerical-aperture (NA) EUV exposure tool and analyzed by the Monte Carlo simulation. The scanning electron microscopy (SEM) images of resist patterns after their development were compared with the latent images calculated on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. The approximate relationship between resist patterns and latent images was clarified for the sub-20 nm half-pitch region. For the realization of 11 nm half-pitch fabrication, the suppression of the stochastic effects in the development process is an important consideration.

  6. Elongation of extreme ultraviolet (at 13.5 nm) emission with time-of-flight controlled discharges and lateral fuel injection

    NASA Astrophysics Data System (ADS)

    Hosokai, Tomonao; Yokoyama, Takuma; Zhidkov, Alexei; Sato, Hiroto; Hotta, Eiki; Horioka, Kazuhiko

    2008-09-01

    A way toward a quasicontinuous extreme ultraviolet (EUV) radiation source is proposed and explored. Tin and lithium vapor discharges with the lateral laser-ablation injection are experimentally studied as possible efficient sources of quasicontinuous emission of EUV radiation at a wavelength of 13.5 nm. It is shown that the time-of-flight control of optimal plasma parameters by means of varying ablating laser pulse parameters provides a considerable elongation of maximal-power EUV emission with an overall efficiency of 0.1% and with an energy output exceeding 1% of the energy deposited in the discharge plasma. Along with a high average power and a stable position, such an emitter may have its size small enough to be used in the projection lithography.

  7. EUV mask observations using a coherent EUV scatterometry microscope with a high-harmonic-generation source

    NASA Astrophysics Data System (ADS)

    Fujino, Takahiro; Tanaka, Yusuke; Harada, Tetsuo; Nagata, Yutaka; Watanabe, Takeo; Kinoshita, Hiroo

    2015-07-01

    In extreme ultraviolet (EUV) lithography, the three-dimensional (3D) structure of the EUV mask, which has an absorber layer and a Mo/Si multilayer on a glass substrate, strongly affects the EUV phase. EUV actinic metrology is required to evaluate the feature of defect printability and the critical dimension (CD) value. The 3D structure modulates the EUV phase, causing the pattern position and focus shift. A microscope that observes in phase contrast necessary. We have developed a coherent EUV scatterometry microscope (CSM) for observing EUV patterns with quantitative phase contrast. The exposure light is coherent EUV light. For the industrial use, we have developed a laboratory coherent source of high-harmonic-generation (HHG) EUV light. High harmonics is pumped by a scale of a Ti:Sapphire laser. In the previous study, a very long exposure time of 1000 s was necessary to detect We upgraded the relay optics. The detection performance of an absorber defect using the new relay optics is We observed the line-end oversize defect and the oversize defect in the 112 nm hole pattern and 180 nm hole pattern. The upgraded system has a detection size limit of a line-end 24-nm-oversize defect with 10 s exposure time, which is 2,688 nm2 (52 × 52 nm2) absorber defect. This result shows high performance capability of HHG-CSM for detecting small defect.

  8. Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

    DOEpatents

    Hassanein, Ahmed; Konkashbaev, Isak

    2006-10-03

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

  9. Development of extreme ultraviolet and soft x-ray multilayer optics for scientific studies with femtosecond/attosecond sources

    SciTech Connect

    Aquila, Andrew Lee

    2009-05-21

    The development of multilayer optics for extreme ultraviolet (EUV) radiation has led to advancements in many areas of science and technology, including materials studies, EUV lithography, water window microscopy, plasma imaging, and orbiting solar physics imaging. Recent developments in femtosecond and attosecond EUV pulse generation from sources such as high harmonic generation lasers, combined with the elemental and chemical specificity provided by EUV radiation, are opening new opportunities to study fundamental dynamic processes in materials. Critical to these efforts is the design and fabrication of multilayer optics to transport, focus, shape and image these ultra-fast pulses This thesis describes the design, fabrication, characterization, and application of multilayer optics for EUV femtosecond and attosecond scientific studies. Multilayer mirrors for bandwidth control, pulse shaping and compression, tri-material multilayers, and multilayers for polarization control are described. Characterization of multilayer optics, including measurement of material optical constants, reflectivity of multilayer mirrors, and metrology of reflected phases of the multilayer, which is critical to maintaining pulse size and shape, were performed. Two applications of these multilayer mirrors are detailed in the thesis. In the first application, broad bandwidth multilayers were used to characterize and measure sub-100 attosecond pulses from a high harmonic generation source and was performed in collaboration with the Max-Planck institute for Quantum Optics and Ludwig- Maximilians University in Garching, Germany, with Professors Krausz and Kleineberg. In the second application, multilayer mirrors with polarization control are useful to study femtosecond spin dynamics in an ongoing collaboration with the T-REX group of Professor Parmigiani at Elettra in Trieste, Italy. As new ultrafast x-ray sources become available, for example free electron lasers, the multilayer designs

  10. Development of extreme ultraviolet and soft x-ray multilayer optics for scientific studies with femtosecond/attosecond sources

    NASA Astrophysics Data System (ADS)

    Aquila, Andrew Lee

    The development of multilayer optics for extreme ultraviolet (EUV) radiation has led to advancements in many areas of science and technology, including materials studies, EUV lithography, water window microscopy, plasma imaging, and orbiting solar physics imaging. Recent developments in femtosecond and attosecond EUV pulse generation from sources such as high harmonic generation lasers, combined with the elemental and chemical specificity provided by EUV radiation, are opening new opportunities to study fundamental dynamic processes in materials. Critical to these efforts is the design and fabrication of multilayer optics to transport, focus, shape and image these ultra-fast pulses. This thesis describes the design, fabrication, characterization, and application of multilayer optics for EUV femtosecond and attosecond scientific studies. Multilayer mirrors for bandwidth control, pulse shaping and compression, tri-material multilayers, and multilayers for polarization control are described. Characterization of multilayer optics, including measurement of material optical constants, reflectivity of multilayer mirrors, and metrology of reflected phases of the multilayer, which is critical to maintaining pulse size and shape, were performed. Two applications of these multilayer mirrors are detailed in the thesis. In the first application, broad bandwidth multilayers were used to characterize and measure sub-100 attosecond pulses from a high harmonic generation source and was performed in collaboration with the Max-Planck institute for Quantum Optics and Ludwig-Maximilians University in Garching, Germany, with Professors Krausz and Kleineberg. In the second application, multilayer mirrors with polarization control are useful to study femtosecond spin dynamics in an ongoing collaboration with the T-REX group of Professor Parmigiani at Elettra in Trieste, Italy. As new ultrafast x-ray sources become available, for example free electron lasers, the multilayer designs

  11. Direct photoetching of polymers using radiation of high energy density from a table-top extreme ultraviolet plasma source

    SciTech Connect

    Barkusky, Frank; Bayer, Armin; Peth, Christian; Mann, Klaus

    2009-01-01

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-driven EUV plasma source utilizing a solid Au target. By 10x demagnified imaging of the plasma a maximum pulse energy density of {approx}0.73 J/cm{sup 2} at a wavelength of 13.5 nm can be achieved in the image plane of the objective at a pulse duration of 8.8 ns. In this paper we present EUV photoetching rates measured for polymethyl methacrylate, polycarbonate, and polytetrafluoroethylene at various fluence levels. A linear dependence between etch depth and applied EUV pulse number could be observed without the necessity for any incubation pulses. By evaluating the slope of these data, etch rates were determined, revealing also a linear behavior for low fluences. A threshold energy density could not be observed. The slope of the linear etch regime as well as deviations from the linear trend at higher energy densities are discussed and compared to data known from deep UV laser ablation. Furthermore, the surface roughness of the structured polymers was measured by atomic force microscopy and compared to the nonirradiated polymer surface, indicating a rather smooth etch process (roughness increase of 20%-30%). The different shapes of the etch craters observed for the three polymers at high energy densities can be explained by the measured fluence dependence of the etch rates, having consequences for the proper use of polymer ablation for beam profiling of focused EUV radiation.

  12. Solid state laser driver for Extreme Ultraviolet Lithography. Revision 1

    SciTech Connect

    Zapata, L.E.; Honig, J.; Reichert, P.; Hackel, L.A.

    1994-05-01

    We describe the design and initial performance of a Nd:YAG laser master oscillator/phase conjugated power amplifier as a driver for extreme ultraviolet lithography. The design provides 0.5 to 1 joule per pulse with about 5 ns pulse width and excellent beam quality up through 1.5 kHz repetition frequency.

  13. Earth-orbiting extreme ultraviolet spectroscopic mission: SPRINT-A/EXCEED

    NASA Astrophysics Data System (ADS)

    Yoshikawa, I.; Tsuchiya, F.; Yamazaki, A.; Yoshioka, K.; Uemizu, K.; Murakami, G.; Kimura, T.; Kagitani, M.; Terada, N.; Kasaba, Y.; Sakanoi, T.; Ishii, H.; Uji, K.

    2012-09-01

    The EXCEED (Extreme Ultraviolet Spectroscope for Exospheric Dynamics) mission is an Earth-orbiting extreme ultraviolet (EUV) spectroscopic mission and the first in the SPRINT series being developed by ISAS/JAXA. It will be launched in the summer of 2013. EUV spectroscopy is suitable for observing tenuous gases and plasmas around planets in the solar system (e.g., Mercury, Venus, Mars, Jupiter, and Saturn). Advantage of remote sensing observation is to take a direct picture of the plasma dynamics and distinguish between spatial and temporal variability explicitly. One of the primary observation targets is an inner magnetosphere of Jupiter, whose plasma dynamics is dominated by planetary rotation. Previous observations have shown a few percents of the hot electron population in the inner magnetosphere whose temperature is 100 times higher than the background thermal electrons. Though the hot electrons have a significant impact on the energy balance in the inner magnetosphere, their generation process has not yet been elucidated. In the EUV range, a number of emission lines originate from plasmas distributed in Jupiter's inner magnetosphere. The EXCEED spectrograph is designed to have a wavelength range of 55-145 nm with minimum spectral resolution of 0.4 nm, enabling the electron temperature and ion composition in the inner magnetosphere to be determined. Another primary objective is to investigate an unresolved problem concerning the escape of the atmosphere to space. Although there have been some in-situ observations by orbiters, our knowledge is still limited. The EXCEED mission plans to make imaging observations of plasmas around Venus and Mars to determine the amounts of escaping atmosphere. The instrument's field of view (FOV) is so wide that we can get an image from the interaction region between the solar wind and planetary plasmas down to the tail region at one time. This will provide us with information about outward-flowing plasmas, e.g., their composition

  14. TWO TYPES OF EXTREME-ULTRAVIOLET BRIGHTENINGS IN AR 10926 OBSERVED BY HINODE/EIS

    SciTech Connect

    Lee, K.-S.; Moon, Y.-J.; Choe, G. S.; Kim, Sujin; Cho, Kyung-Suk; Imada, S.

    2011-07-20

    We have investigated seven extreme-ultraviolet (EUV) brightenings in the active region AR 10926 on 2006 December 2 observed by the EUV Imaging Spectrometer on board the Hinode spacecraft. We have determined their Doppler velocities and non-thermal velocities from 15 EUV spectral lines (log T = 4.7 - 6.4) by fitting each line profile to a Gaussian function. The Doppler velocity maps for different temperatures are presented to show the height dependence of the Doppler shifts. It is found that the active region brightenings show two distinct Doppler shift patterns. The type 1 brightening shows a systematic increase of Doppler velocity from -68 km s{sup -1} (strong blueshift) at log T = 4.7 to -2 km s{sup -1} (weak blueshift) at log T = 6.4, while the type 2 brightenings have Doppler velocities in the range from -20 km s{sup -1} to 20 km s{sup -1}. The type 1 brightening point is considered to sit in an upward reconnection outflow whose speed decreases with height. In both types of brightenings, the non-thermal velocity is found to be significantly enhanced at log T = 5.8 compared to the background region. We have also determined electron densities from line ratios and derived temperatures from emission measure loci using the CHIANTI atomic database. The electron densities of all brightenings are comparable to typical values in active regions (log N{sub e} = 9.9-10.4). The emission measure loci plots indicate that these brightenings should be multi-thermal whereas the background is isothermal. The differential emission measure as a function of temperature shows multiple peaks in the EUV brightening regions, while it has only a single peak (log T = 6.0) in the background region. Using Michelson Doppler Imager magnetograms, we have found that the type 1 brightening is associated with a canceling magnetic feature with a flux canceling rate of 2.4 x 10{sup 18} Mx hr{sup -1}. We also found the canceling magnetic feature and chromospheric brightenings in the type 1

  15. X ray, extreme and far ultraviolet optical thin films for space applications

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Kim, Jongmin

    1993-01-01

    Far and extreme ultraviolet optical thin film filters find many uses in space astronomy, space astrophysics, and space aeronomy. Spacebased spectrographs are used for studying emission and absorption features of the earth, planets, sun, stars, and the interstellar medium. Most of these spectrographs use transmission or reflection filters. This requirement has prompted a search for selective filtering coatings with high throughput in the FUV and EUV spectral region. Important progress toward the development of thin film filters with improved efficiency and stability has been made in recent years. The goal for this field is the minimization of absorption to get high throughput and enhancement of wavelength selection. The Optical Aeronomy Laboratory (OAL) at the University of Alabama in Huntsville has recently developed the technology to determine optical constants of bulk and film materials for wavelengths extending from x-rays (0.1 nm) to the FUV (200 nm), and several materials have been identified that were used for designs of various optical devices which previously have been restricted to space application in the visible and near infrared. A new design concept called the Pi-multilayer was introduced and applied to the design of optical coatings for wavelengths extending from x-rays to the FUV. Section 3 of this report explains the Pi-multilayer approach and demonstrates its application for the design and fabrication of the FUV coatings. Two layer Pi-stacks have been utilized for the design of reflection filters in the EUV wavelength range from 70 - 100 nm. In order to eliminate losses due to the low reflection of the imaging optics and increase throughput and out-of-band rejection of the EUV instrumentation we introduced a self-filtering camera concept. In the FUV region, MgF2 and LiF crystals are known to be birefringent. Transmission polarizers and quarterwave retarders made of MgF2 or LiF crystals are commercially available but the performances are poor. New

  16. Comparison of solar radio and extreme ultraviolet synoptic limb charts during the present solar maximum

    NASA Astrophysics Data System (ADS)

    Oliveira e Silva, A. J.; Selhorst, C. L.; Simões, P. J. A.; Giménez de Castro, C. G.

    2016-08-01

    Aims: The present solar cycle is particular in many aspects: it had a delayed rising phase, it is the weakest of the last 100 yrs, and it presents two peaks separated by more than one year. To understand the impact of these characteristics on the solar chromosphere and coronal dynamics, images from a wide wavelength range are needed. In this work we use the 17 GHz radio continuum, which is formed in the upper chromosphere and the extreme ultraviolet (EUV) lines 304 and 171 Å, that come from the transition region (He ii, T ~ 6-8 × 104 K) and the corona (Fe IX, X, T ~ 106 K), respectively.We extend upon a previous similar analysis, and compare the mean equatorial and polar brightening behavior at radio and EUV wavelengths during the maximum of the present solar cycle, covering the period between 2010 and 2015. Methods: We analyze daily images at 304 and 171 Å obtained by the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO). The 17 GHz maps were obtained by the Nobeyama Radioheliograph (NoRH). To construct synoptic limb charts, we calculated the mean emission of delimited limb areas with 100'' wide and angular separation of 5°. Results: At the equatorial region, the results show a hemispheric asymmetry of the solar activity. The northern hemisphere dominance is coincident with the first sunspot number peak, whereas the second peak occurs concurrently with the increase in the activity at the south. The polar emission reflects the presence of coronal holes at both EUV wavelengths, moreover, the 17 GHz polar brightenings can be associated with the coronal holes. Until 2013, both EUV coronal holes and radio polar brightenings were more predominant at the south pole.Since then they have not been apparent in the north, but thus appear in the beginning of 2015 in the south as observed in the synoptic charts. Conclusions: This work strengthens the association between coronal holes and the 17 GHz polar brightenings as it is evident in the

  17. Delayed response of the global total electron content to solar EUV variations

    NASA Astrophysics Data System (ADS)

    Jacobi, Christoph; Jakowski, Norbert; Schmidtke, Gerhard; Woods, Thomas N.

    2016-09-01

    The ionospheric response to solar extreme ultraviolet (EUV) variability during 2011-2014 is shown by simple proxies based on Solar Dynamics Observatory/Extreme Ultraviolet Variability Experiment solar EUV spectra. The daily proxies are compared with global mean total electron content (TEC) computed from global TEC maps derived from Global Navigation Satellite System dual frequency measurements. They describe about 74 % of the intra-seasonal TEC variability. At time scales of the solar rotation up to about 40 days there is a time lag between EUV and TEC variability of about one day, with a tendency to increase for longer time scales.

  18. Dynamic range considerations for EUV MAMA detectors. [Extreme UV Multianode Microchannel Array

    NASA Technical Reports Server (NTRS)

    Illing, Rainer M. E.; Bybee, Richard L.; Timothy, J. G.

    1990-01-01

    The multianode microchannel array (MAMA) has been chosen as the detector for two instruments on the ESA/NASA Solar Heliospheric Observatory. The response of the MAMA to the two extreme types of solar spectra, disk and corona, have been modeled with a view toward evaluating dynamic range effects present. The method of MAMA operation is discussed, with emphasis given to modeling the effect of electron cloud charge spreading to several detector anodes and amplifiers (n-fold events). Representative synthetic EUV spectra have been created. The detector response to these spectra is modeled by dissecting the input photon radiation field across the detector array into contributions to the various amplifier channels. The results of this dissection are shown for spectral regions across the entire wavelength region of interest. These results are used to identify regions in which total array photon counting rate or individual amplifier rate may exceed the design limits. This allows the design or operational modes to be tailored to eliminate the problem areas.

  19. Computation of reflected images from extreme ultraviolet masks

    NASA Astrophysics Data System (ADS)

    Bollepalli, Srinivas B.; Cerrina, Franco

    1999-06-01

    With EUV lithography emerging as a promising technology for semiconductor device fabrication with critical dimensions extreme ultra violet mask. In particular, we show the effects caused due to diffraction, non-uniformities in the multilayer stack due to substrate defects, and partial spatial coherence. Several simulation examples are presented.

  20. Optical and EUV light curves of dwarf nova outbursts

    SciTech Connect

    Mauche, C W; Mattei, J A; Bateson, F M

    2000-11-15

    We combine AAVSO and VSS/RASNZ optical and Extreme Ultraviolet Explorer EUV light curves of dwarf novae in outburst to place constraints on the nature of dwarf nova outbursts. From the observed optical-EUV time delays of {approx} 0.75-1.5 days, we show that the propagation velocity of the dwarf nova instability heating wave is {approx} 3 km s{sup -1}.

  1. Alternate charging profiles for the onboard nickel cadmium batteries of the Explorer Platform/Extreme Ultraviolet Explorer

    NASA Technical Reports Server (NTRS)

    Rao, Gopalakrishna M.; Prettyman-Lukoschek, Jill S.

    1995-01-01

    The Explorer Platform/Extreme Ultraviolet Explorer (EP/EUVE) spacecraft power is provided by the Modular Power Subsystems (MPS) which contains three 50 ampere-hour Nickel Cadmium (NiCd) batteries. The batteries were fabricated by McDonnell Douglas Electronics Systems Company, with the cells fabricated by Gates Aerospace Batteries (GAB), Gainesville, Florida. Shortly following launch, the battery performance characteristics showed similar signatures as the anomalous performance observed on both the Upper Atmosphere Research Satellite (UARS) and the Compton Gamma Ray Observatory (CGRO). This prompted the development and implementation of alternate charging profiles to optimize the spacecraft battery performance. The Flight Operations Team (FOT), under the direction of Goddard Space Flight Center's (GSFC) EP/EUVE Project and Space Power Applications Branch have monitored and managed battery performance through control of the battery Charge to Discharge (C/D) ratio and implementation of a Solar Array (SA) offset. This paper provides a brief overview of the EP/EUVE mission, the MPS, the FOT's battery management for achieving the alternate charging profile, and the observed spacecraft battery performance.

  2. Design of anamorphic magnification high-numerical aperture objective for extreme ultraviolet lithography by curvatures combination method.

    PubMed

    Liu, Yan; Li, Yanqiu; Cao, Zhen

    2016-06-20

    An anamorphic magnification extreme ultraviolet (EUV) lithographic objective could increase the size of the exposure field at a wafer in the orthogonal scanning direction to improve the throughput of the lithographic system. In this paper, we present a curvatures combination method for an anamorphic magnification EUV lithographic objective with high numerical aperture (NA). This method achieves an anamorphic magnification initial structure by use of the double-curvature surfaces, which are formed by combining the curvatures of the corresponding surfaces into two coaxial spherical systems. A series of control measures is taken to design the two coaxial spherical systems for ensuring the rationalities of the initial structure and the surfaces after combining. The image quality of the anamorphic initial structure is optimized by a gradual optimization process. Finally, as an example, we design an Mx1/4 and My1/8 anamorphic magnification EUV lithographic objective with the presented design method. This objective achieves 0.5 NA and a 26  mm×16.5  mm exposure field at the wafer. The wavefront error RMS reaches 0.06λ (λ=13.5  nm), and the distortion is less than 2.8 nm. The design result proves the availability of the curvatures combination method. PMID:27409118

  3. Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond.

    PubMed

    Mojarad, N; Hojeij, M; Wang, L; Gobrecht, J; Ekinci, Y

    2015-03-01

    All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ≈3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists. PMID:25653148

  4. An Upper Limit on the Ratio Between the Extreme Ultraviolet and the Bolometric Luminosities of Stars Hosting Habitable Planets

    NASA Astrophysics Data System (ADS)

    Sengupta, Sujan

    2016-06-01

    A large number of terrestrial planets in the classical habitable zone of stars of different spectral types have already been discovered and many are expected to be discovered in the near future. However, owing to the lack of knowledge on the atmospheric properties, the ambient environment of such planets are unknown. It is known that sufficient amount of Extreme Ultraviolet (EUV) radiation from the star can drive hydrodynamic outflow of hydrogen that may drag heavier species from the atmosphere of the planet. If the rate of mass loss is sufficiently high, then substantial amount of volatiles would escape causing the planet to become uninhabitable. Considering energy-limited hydrodynamical mass loss with an escape rate that causes oxygen to escape alongwith hydrogen, an upper limit for the ratio between the EUV and the bolometric luminosities of stars which constrains the habitability of planets around them is presented here. Application of the limit to planet-hosting stars with known EUV luminosities implies that many M-type of stars should not have habitable planets around them.

  5. Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Amano, Tsuyoshi; Hirano, Ryoichi; Terasawa, Tsuneo; Watanabe, Hidehiro

    2013-04-01

    According to an International Technology Roadmap for Semiconductors (ITRS-2012) update, the sensitivity requirement for an extreme ultraviolet (EUV) mask pattern inspection system is to be less than 18 nm for half pitch (hp) 16-nm node devices. The inspection sensitivity of extrusion and intrusion defects on hp 64-nm line-and-space patterned EUV mask were investigated using simulated projection electron microscope (PEM) images. The obtained defect images showed that the optimization of current density and image processing techniques were essential for the detection of defects. Extrusion and intrusion defects 16 nm in size were detected on images formed by 3000 electrons per pixel. The landing energy also greatly influenced the defect detection efficiency. These influences were different for extrusion and intrusion defects. These results were in good agreement with experimentally obtained yield curves of the mask materials and the elevation angles of the defects. These results suggest that the PEM technique has a potential to detect 16-nm size defects on an hp 64-nm patterned EUV mask.

  6. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E.

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  7. Direct photo-etching of poly(methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus

    2007-06-15

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-based EUV plasma source (pulse energy 3 mJ at {lambda}=13.5 nm, plasma diameter {approx}300 {mu}m). By 10x demagnified imaging of the plasma a pulse energy density of {approx}75 mJ/cm{sup 2} at a pulse length of 6 ns can be achieved in the image plane of the objective. As demonstrated for poly(methyl methacrylate) (PMMA), photoetching of polymer surfaces is possible at this EUV fluence level. This paper presents first results, including a systematic determination of PMMA etching rates under EUV irradiation. Furthermore, the contribution of out-of-band radiation to the surface etching of PMMA was investigated by conducting a diffraction experiment for spectral discrimination from higher wavelength radiation. Imaging of a pinhole positioned behind the plasma accomplished the generation of an EUV spot of 1 {mu}m diameter, which was employed for direct writing of surface structures in PMMA.

  8. Effects of low-molecular weight resist components on dissolution behavior of chemically amplified resists for extreme ultraviolet lithography studied by quartz crystal microbalance

    NASA Astrophysics Data System (ADS)

    Mitsuyasu, Masaki; Yamamoto, Hiroki; Kozawa, Takahiro

    2015-03-01

    It is challenging to implement extreme ultraviolet (EUV) lithography for mass production because the demands for the EUV resist materials are very strict. Under such circumstances, it is important in EUV resist design to clarify the dissolution behavior of the resist film into alkaline developer. In particular, the dissolution in exposed area of resist films is one of the most critical processes. However, the details in dissolution process of EUV resist have not been investigated thus far. In this study, the dissolution of poly(4-hydroxystyrene) (PHS) polymer and PHS partially-protected with t-butoxycarbonyl group (t-BOC-PHS) with and without additives such as acid generator and amines was studied by using the quartz crystal microbalance (QCM) method. The dissolution behavior of thin films was investigated by varying the exposure dose and the acid generator concentration from the standpoint of a systematic understanding of the effects of each resist component on dissolution kinetics. The dissolution speed became slower with increase of TPS-tf concentration in PHS and t-BOC-PHS. It is important for the EUV resist design to take into account the concentration of undecomposed PAG.

  9. Near-resonant four-wave mixing of attosecond extreme-ultraviolet pulses with near-infrared pulses in neon: Detection of electronic coherences

    NASA Astrophysics Data System (ADS)

    Cao, Wei; Warrick, Erika R.; Fidler, Ashley; Leone, Stephen R.; Neumark, Daniel M.

    2016-08-01

    Coherent narrow-band extreme-ultraviolet (EUV) light is generated by a near-resonant four-wave mixing (FWM) process between attosecond pulse trains and near-infrared pulses in neon gas. The near-resonant FWM process involves one vacuum-ultraviolet (VUV) photon and two near-infrared (NIR) photons and produces new higher-energy frequency components corresponding to the n s /n d to ground-state (2 s22 p6) transitions in the neon atom. The EUV emission exhibits small angular divergence (2 mrad) and monotonically increasing intensity over a pressure range of 0.5-16 Torr, suggesting phase matching in the production of the narrow-bandwidth coherent EUV light. In addition, time-resolved scans of the NIR nonlinear mixing process reveal the detection of a persistent, ultrafast bound electronic wave packet based on a coherent superposition initiated by the VUV pulse in the neon atoms. This FWM process using attosecond pulses offers a means for both efficient narrow-band EUV source generation and time-resolved investigations of ultrafast dynamics.

  10. Method for the Characterization of Extreme-Ultraviolet Photoresist Outgassing.

    PubMed

    Tarrio, Charles

    2009-01-01

    Outgassing from photoresists illuminated by extreme ultraviolet radiation can lead to degradation of the very expensive multilayer-coated optics in an extreme ultraviolet stepper. Reliable quantification of the various organic molecules outgassed by photoresists has been a challenging goal. We have designed a compact system for this measurement. In the first step, the total number of molecules emitted by the photoresist is measured using a pressure-rise method in a closed vacuum chamber, with the pressure measured by mechanical means using a capacitance displacement gauge. To provide identification and relative abundances, the outgassed molecules are then collected in an evacuated trap cooled by liquid nitrogen for subsequent analysis by gas chromatography with mass spectrometry. We will discuss the design and performance of the system.

  11. Interference-induced peak splitting in extreme ultraviolet superfluorescence.

    PubMed

    Cui, Ni; Keitel, Christoph H; Macovei, Mihai

    2013-02-15

    We investigate the laser-induced quantum interference in extreme ultraviolet superfluorescence (SF) occurring in a dense gas of Λ-type helium atoms coupled by a coherent laser field in the visible region. Due to the constructive interatomic and intraatomic interferences, the SF can split in two pulses conveniently controlled by the gas density and intensity of the driving field, suggesting potential applications for pump-probe experiments.

  12. Grating configurations to compress extreme-ultraviolet ultrashort pulses.

    PubMed

    Frassetto, Fabio; Poletto, Luca

    2015-09-10

    It is here discussed the design of ultrafast extreme-ultraviolet (XUV) grating compressors that can be used to condition the spectral phase of ultrashort chirped pulses to compensate for the phase chirp and get closer to the Fourier limit. We discuss the two configurations that can be used to realize the compressor, the classical diffraction mount, and the off-plane one. The concept is applied to the realization of a XUV compressor with applications to free-electron lasers.

  13. EUV Emission of a Pulsed Capillary Discharge

    NASA Astrophysics Data System (ADS)

    Chan, L. S.; Yap, S. L.; Wong, C. S.

    2011-03-01

    An argon-filled capillary discharge system with an inner diameter of 1 mm and a length of 10 mm is investigated as potential Extreme Ultraviolet (EUV) light source. The working pressure is maintained in the range of 10-4 mbar and the discharge voltage is varied in order to obtain the maximum emission of the EUV energy. The current that flows through the capillary plasma is measured by a magnetic probe while EUV radiation from the capillary discharge is detected by two sets of EUV detector, D1 and D2. Total EUV energy of the order of milli joules is obtained in the wavelength range of 11 to 18 nm from measurement using D1. However, the total energy of the 13.5 nm radiation, as deduced from the signal of D2 is only of the order of micro joules. It is also found that the total EUV energy in the wavelength of 11 to 18 nm increases with the discharge voltage, while the total energy of the EUV radiation at 13.5 nm decreases with the discharge voltage for the current setup.

  14. Exploring EUV Spicules Using 304 Angstrom He II Data from SDO AIA

    NASA Technical Reports Server (NTRS)

    Snyder, Ian R.; Sterling, Alphonse C.; Falconer, David A.; Moore, Ron L.

    2014-01-01

    We present results from a statistical study of He II 304 Angstrom Extreme Ultraviolet (EUV) spicules at the limb of the Sun. We also measured properties of one macrospicule; macrospicules are longer than most spicules, and much broader in width than spicules. We use high-cadence (12 second) and high-resolution (0.6 arcseconds pixels) resolution data from the Atmospheric Imaging Array (AIA) instrument on the Solar Dynamic Observatory (SDO). All of the observed events occurred near the solar north pole, where quiet Sun or coronal hole environments ensued. We examined the maximum lengths, maximum rise velocities, and lifetimes of 33 Extreme Ultraviolet (EUV) spicules and the macrospicule. For the bulk of the Extreme Ultraviolet (EUV) spicules these quantities are, respectively, approximately 10,000-40,000 kilometers, 20-100 kilometers per second, and approximately 100- approximately 1000 seconds. For the macrospicule the corresponding quantities were respectively approximately 60,000 kilometers, approximately 130 kilometers per second, approximately 1800 seconds, which is typical of macrospicules measured by other workers. Therefore macrospicules are taller, longer-lived, and faster than most Extreme Ultraviolet (EUV) spicules. The rise profiles of both the spicules and the macrospicules match well a second-order ("parabolic" ) trajectory, although the acceleration was often weaker than that of solar gravity in the profiles fitted to the trajectories. Our macrospicule also had an obvious brightening at its base at birth, while such brightening was not apparent for the Extreme Ultraviolet (EUV) spicules. Most of the Extreme Ultraviolet (EUV) spicules remained visible during their descent back to the solar surface, although a small percentage of the spicules and the macrospicule faded out before falling back to the surface. Our sample of macrospicules is not yet large enough to determine whether their initiation mechanism is identical to that of Extreme Ultraviolet (EUV

  15. Ultraviolet and extreme ultraviolet spectroscopy of the solar corona at the Naval Research Laboratory.

    PubMed

    Moses, J D; Ko, Y-K; Laming, J M; Provornikova, E A; Strachan, L; Beltran, S Tun

    2015-11-01

    We review the history of ultraviolet and extreme ultraviolet spectroscopy with a specific focus on such activities at the Naval Research Laboratory and on studies of the extended solar corona and solar-wind source regions. We describe the problem of forecasting solar energetic particle events and discuss an observational technique designed to solve this problem by detecting supra-thermal seed particles as extended wings on spectral lines. Such seed particles are believed to be a necessary prerequisite for particle acceleration by heliospheric shock waves driven by a coronal mass ejection. PMID:26560611

  16. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect

    Shin, H.; Srivastava, S. N.; Ruzic, D. N.

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  17. THE FIRST STRAY LIGHT CORRECTED EXTREME-ULTRAVIOLET IMAGES OF SOLAR CORONAL HOLES

    SciTech Connect

    Shearer, Paul; Gilbert, Anna C.; Frazin, Richard A.; Hero III, Alfred O. E-mail: annacg@umich.edu E-mail: hero@umich.edu

    2012-04-10

    Coronal holes are the source regions of the fast solar wind, which fills most of the solar system volume near the cycle minimum. Removing stray light from extreme-ultraviolet (EUV) images of the Sun's corona is of high astrophysical importance, as it is required to make meaningful determinations of temperatures and densities of coronal holes. EUV images tend to be dominated by the component of the stray light due to the long-range scatter caused by the microroughness of telescope mirror surfaces, and this component has proven very difficult to measure in pre-flight characterization. In-flight characterization heretofore has proven elusive due to the fact that the detected image is simultaneously nonlinear in two unknown functions: the stray light pattern and the true image that would be seen by an ideal telescope. Using a constrained blind deconvolution technique that takes advantage of known zeros in the true image provided by a fortuitous lunar transit, we have removed the stray light from solar images seen by the EUVI instrument on STEREO-B in all four filter bands (171, 195, 284, and 304 A). Uncertainty measures of the stray light corrected images, which include the systematic error due to misestimation of the scatter, are provided. It is shown that in EUVI, stray light contributes up to 70% of the emission in coronal holes seen on the solar disk, which has dramatic consequences for diagnostics of temperature and density and therefore estimates of key plasma parameters such as the plasma {beta} and ion-electron collision rates.

  18. Data processing of solar EUV instruments on the METEOR satellite

    NASA Technical Reports Server (NTRS)

    Brown, Hipook

    1995-01-01

    The Multiple Experiment Transporter into Earth Orbit and Return-Solar EUV Experiment (METEOR-SEE) project will take daily extreme ultraviolet (EUV) irradiance spectra starting in the summer of 1995. The METEOR-SEE package consists of an EUV grating spectrograph (EGS) and a cluster of 5 soft x-ray photometers (XP's). Both these instruments have flown previously on NASA sounding rockets. Because of the scope of the project, new data processing algorithms had to be developed for the SEE instruments onboard the METEOR satellite. An overview of the data flow describes how satellite data are collected and processed. Detailed descriptions of specific routines will show what data processing entails.

  19. The Plasmasphere as Seen by the IMAGE EUV Instrument

    NASA Technical Reports Server (NTRS)

    Gallagher, D. L.; Sandel, B.

    2000-01-01

    The IMAGE spacecraft includes the extreme ultraviolet (EUV) imager, which is designed to view He+ plasmaspheric ions in the inner magnetosphere. These images provide the first opportunity to view the global distribution of plasmaspheric ions and their response to solar wind induced convection and the ring current. In addition to the generalized pattern of convection long believed to develop in thermal plasma, the EUV instrument is observing other meso-scale patterns of plasma distribution never before observed or postulated using in situ measurements. This poster presentation will present the "first light" observations of the EUV instrument and their possible interpretations.

  20. DIAGNOSTIC LINE EMISSION FROM EXTREME ULTRAVIOLET AND X-RAY-ILLUMINATED DISKS AND SHOCKS AROUND LOW-MASS STARS

    SciTech Connect

    Hollenbach, David; Gorti, U.

    2009-10-01

    Extreme ultraviolet (EUV; 13.6 eV EUV luminosity and spectral shape, X-ray luminosity and spectral shape, and wind mass loss rate and shock speed. Comparing our models with observations, we conclude that either internal shocks in the winds or X-rays incident on the disk surfaces often produce the observed [Ne II] line, although there are cases where EUV may dominate. Shocks created by the oblique interaction of winds with disks are unlikely [Ne II] sources because these shocks are too weak to ionize Ne. Even if [Ne II] is mainly produced by X-rays or internal wind shocks, the neon observations typically place upper limits of {approx}<10{sup 42} s{sup -1} on the EUV photon luminosity of these young low-mass stars. The observed [O I] 6300 A line has both a low velocity component (LVC) and a high velocity component. The latter likely arises in internal wind shocks. For the former we find that X-rays likely produce more [O I] luminosity than either the EUV layer, the transition layer between the EUV and X-ray layer, or the shear layer where the protostellar wind shocks and entrains disk material in a radial flow across the surface of the disk. Our soft X-ray models produce [O I] LVCs with luminosities up to 10{sup -4} L{sub sun}, but may not be able to explain the most luminous LVCs.

  1. Determining the Critcial Size of EUV Mask Substrate Defects

    SciTech Connect

    Mccall, Monnikue M; Han, Hakseung; Cho, Wonil; Goldberg, Kenneth; Gullikson, Eric; Jeon, Chan-Uk; Wurm, Stefan

    2008-02-28

    Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting multilayer stack is an important issue in EUVL lithography. Several simulation studies have been performed in the past to determine the tolerable defect size on EUV mask blank substrates but the industry still has no exact specification based on real printability tests. Therefore, it is imperative to experimentally determine the printability of small defects on a mask blanks that are caused by substrate defects using direct printing of programmed substrate defect in an EUV exposure tool. SEMATECH fabricated bump type program defect masks using standard electron beam lithography and performed printing tests with the masks using an EUV exposure tool. Defect images were also captured using SEMATECH's Berkeley Actinic Imaging Tool in order to compare aerial defect images with secondary electron microscope images from exposed wafers. In this paper, a comprehensive understanding of substrate defect printability will be presented and printability specifications of EUV mask substrate defects will be discussed.

  2. Determining the critical size of EUV mask substrate defects

    SciTech Connect

    Goldberg, Kenneth A.; Gullikson, Eric M.; Han, Hakseung; Cho, Wonil; Jeon, Chan-Uk; Wurm, Stefan

    2008-05-26

    Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting multilayer stack is an important issue in EUVL lithography. Several simulation studies have been performed in the past to determine the tolerable defect size on EUV mask blank substrates but the industry still has no exact specification based on real printability tests. Therefore, it is imperative to experimentally determine the printability of small defects on a mask blanks that are caused by substrate defects using direct printing of programmed substrate defect in an EUV exposure tools. SEMATECH fabricated bump type program defect masks using standard electron beam lithography and performed printing tests with the masks using an EUV exposure tool. Defect images were also captured using SEMATECH's Berkeley Actinic Imaging Tool in order to compare aerial defect images with secondary electron microscope images from exposed wafers. In this paper, a comprehensive understanding of substrate defect printability will be presented and printability specifications of EUV mask substrate defects will be discussed.

  3. Recent progress in nanoparticle photoresists development for EUV lithography

    NASA Astrophysics Data System (ADS)

    Kasahara, Kazuki; Kosma, Vasiliki; Odent, Jeremy; Xu, Hong; Yu, Mufei; Giannelis, Emmanuel P.; Ober, Christopher K.

    2016-03-01

    Extreme ultraviolet (EUV) lithography is a promising candidate for next generation lithography. For high volume manufacturing of semiconductor devices, significant improvement of resolution and sensitivity is required for successful implementation of EUV resists. Performance requirements for such resists demand the development of entirely new resist platforms. Cornell University has intensely studied metal oxide nanoparticle photoresists with high sensitivity for EUV lithography applications. Zirconium oxide nanoparticles with PAG enabling sub 30nm line negative tone patterns at an EUV dose below 5 mJ/cm2 show one of the best EUV sensitivity results ever reported. In this paper, recent progress in metal oxide nanoparticle photoresist research will be discussed. Several studies regarding composition investigation and new metal element study are reported.

  4. Improvement of EUV mix-match overlay for production implementation

    NASA Astrophysics Data System (ADS)

    Park, Sarohan; Lee, ByoungHoon; Lee, Byong-Seog; Lee, Inwhan; Lim, Chang-Moon

    2016-03-01

    The improvement of overlay control in extreme ultra-violet (EUV) lithography is one of critical issues for successful mass production by using it. Especially it is important to improve the mix and match overlay or matched machine overlay (MMO) between EUV and ArF immersion tool, because EUV process will be applied to specific layers that have more competitive cost edge against ArF immersion multiple patterning with the early mass productivity of EUVL. Therefore it is necessary to consider the EUV overlay target with comparing the overlay specification of double patterning technology (DPT) and spacer patterning technology (SPT). This paper will discuss about required overlay controllability and current performance of EUV, and challenges for future improvement.

  5. Concept Study Report: Extreme-Ultraviolet Imaging Spectrometer Solar-B

    NASA Technical Reports Server (NTRS)

    Doschek, George, A.; Brown, Charles M.; Davila, Joseph M.; Dere, Kenneth P.; Korendyke, Clarence M.; Mariska, John T.; Seely, John F.

    1999-01-01

    We propose a next generation Extreme-ultraviolet Imaging Spectrometer (EIS) that for the first time combines high spectral, spatial, and temporal resolution in a single solar spectroscopic instrument. The instrument consists of a multilayer-coated off-axis telescope mirror and a multilayer-coated grating spectrometer. The telescope mirror forms solar images on the spectrometer entrance slit assembly. The spectrometer forms stigmatic spectra of the solar region located at the slit. This region is selected by the articulated telescope mirror. Monochromatic images are obtained either by rastering the solar region across a narrow entrance slit, or by using a very wide slit (called a slot) in place of the slit. Monochromatic images of the region centered on the slot are obtained in a single exposure. Half of each optic is coated to maximize reflectance at 195 Angstroms; the other half to maximize reflectance at 270 Angstroms. The two Extreme Ultraviolet (EUV) wavelength bands have been selected to maximize spectral and dynamical and plasma diagnostic capabilities. Spectral lines are observed that are formed over a temperature range from about 0.1 MK to about 20 MK. The main EIS instrument characteristics are: wavelength bands - 180 to 204 Angstroms; 250 to 290 Angstroms; spectral resolution - 0.0223 Angstroms/pixel (34.3km/s at 195 Angstroms and 23.6 km/s at 284 Angstroms); slit dimensions - 4 slits, two currently specified dimensions are 1" x 1024" and 50" x 1024" (the slot); largest spatial field of view in a single exposure - 50" x 1024"; highest time resolution for active region velocity studies - 4.4 s.

  6. Low density of neutral hydrogen and helium in the local interstellar medium: Extreme Ultraviolet Explorer photometry of the Lyman continuum of the hot white dwarfs MCT 0501-2858, MCT 0455-2812, HZ 43, and GD 153.

    PubMed

    Vennes, S; Dupuis, J; Bowyer, S; Fontaine, G; Wiercigroch, A; Jelinsky, P; Wesemael, F; Malina, R

    1994-01-20

    The first comprehensive sky survey of the extreme ultraviolet (EUV) spectral range performed by the Extreme Ultraviolet Explorer (EUVE) has uncovered a handful of very bright sources at wavelengths longer than the He I 504 angstroms photoionization edge. Among these objects are four white dwarfs with exceptionally low interstellar medium (ISM) column densities along the line of sight. Analysis of EUV photometry of the He-rich DO white dwarf MCT 0501-2858 and the H-rich DA white dwarf MCT 0455-2812 along one line of sight and of the DA white dwarfs HZ 43 and GD 153 near the north Galactic pole indicates that the overall minimum column density of the neutral material centered on the Sun is N(H I)= 0.5-1.0 x 10(18) cm-2. In the case of MCT 0501-2858, EUV photometric measurements provide a clear constraint to the effective temperature (60,000-70,000 K). Given these neutral hydrogen columns, the actual contribution to the density of neutral species from the immediate solar environment (the "local fluff") would only cover a distance of approximately 2-3 pc (assuming an average density n(H I) = 0.1 cm-3) leaving these lines of sight almost entirely within the hot phase of the ISM. A preliminary examination of the complete EUVE long-wavelength survey indicates that these lines of sight are exceptional and set a minimum column density in the solar environment.

  7. Low density of neutral hydrogen and helium in the local interstellar medium: Extreme Ultraviolet Explorer photometry of the Lyman continuum of the hot white dwarfs MCT 0501-2858, MCT 0455-2812, HZ 43, and GD 153

    NASA Technical Reports Server (NTRS)

    Vennes, Stephane; Dupuis, Jean; Bowyer, Stuart; Fontaine, Gilles; Wiercigroch, Alexandria; Jelinsky, Patrick; Wesemael, Francois; Malina, Roger

    1994-01-01

    The first comprehensive sky survey of the extreme ultraviolet (EUV) spectral range performed by the Extreme Ultraviolet Explorer (EUVE) has uncovered a handful of very bright sources at wavelengths longer than the He I 504 A photoionization edge. Among these objects are four white dwarfs with exceptionally low interstellar medium (ISM) column densities along the line of sight. Analysis of EUV photometry of the He-rich DO white dwarf MCT 0501-2858 and the H-rich DA white dwarf MCT 0455-2812 along one line of sight and of the DA white dwarfs HZ 43 and GD 153 near the north Galactic pole indicates that the overall minimum column density of the neutral material centered on the Sun is N(H I) = 0.5-1.0 x 10(exp 18)/sq cm. In the case of MCT 0501-2858, EUV photometric measurements provide a clear constraint to the effective temperature (60,000-70,000 K). Given these neutral hydrogen columns, the actual contribution to the density of neutral species from the immediate solar environment (the 'local fluff') would only cover a distance of approximately equals 2-3 pc (assuming an average density n(H I) = 0.1/cu cm) leaving these lines of sight almost entirely within the hot phase of the ISM. A preliminary examination of the complete EUVE long-wavelength survey indicates that these lines of sight are exceptional and set a minimum column density in the solar environment.

  8. Cleaning process for EUV optical substrates

    DOEpatents

    Weber, Frank J.; Spiller, Eberhard A.

    1999-01-01

    A cleaning process for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.

  9. Cleaning process for EUV optical substrates

    SciTech Connect

    Weber, F.J.; Spiller, E.A.

    1999-09-28

    A cleaning process is disclosed for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.

  10. EUVE GO Survey: High Levels of User Satisfaction

    NASA Astrophysics Data System (ADS)

    Stroozas, B. A.

    2000-12-01

    This paper describes the results of a detailed customer survey of Guest Observers (GOs) for NASA's Extreme Ultraviolet Explorer (EUVE) astronomy satellite observatory. The purpose of the research survey was to (1) measure the levels of GO customer satisfaction with respect to EUVE observing services, and (2) compare the observing experiences of EUVE GOs with their experiences using other satellite observatories. This survey was conducted as a business research project -- part of the author's graduate work as an MBA candidate. A total sample of 38 respondents, from a working population of 101 "active" EUVE GOs, participated in this survey. The results, which provided a profile of the "typical" EUVE GO, showed in a statistically significant fashion that these GOs were more than satisfied with the available EUVE observing services. In fact, the sample GOs generally rated their EUVE observing experiences to be better than average as compared to their experiences as GOs on other missions. These relatively high satisfaction results are particularly pleasing to the EUVE Project which, given its significantly reduced staffing environment at U.C. Berkeley, has continued to do more with less. This paper outlines the overall survey process: the relevant background and previous research, the survey design and methodology, and the final results and their interpretation. The paper also points out some general limitations and weaknesses of the study, along with some recommended actions for the EUVE Project and for NASA in general. This work was funded by NASA/UCB Cooperative Agreement NCC5-138.

  11. The solar extreme ultra-violet corona: Resolved loops and the unresolved active region corona

    NASA Astrophysics Data System (ADS)

    Cirtain, Jonathan Wesley

    In this work, physical characteristics of the solar corona as observed in the Extreme Ultra-Violet (EUV) regime are investigated. The focus will be the regions of intense EUV radiation generally found near the locations of sunspots. These regions are commonly called active regions. Multiple space- based observing platforms have been deployed in the last decade; it is possible to use several of these observatories in combination to develop a more complete picture of the solar corona. Joint Observing Program 146 was created to collect spectroscopic intensities using the Coronal Diagnostic Spectrometer on Solar and Heliospheric Observatory and EUV images using NASA's Transition Region and Coronal Explorer. The emission line intensities are analyzed to develop an understanding of the temperature and density of the active region coronal plasma. However, the performance of the CDS instrument in the spatial and temporal domains is limited and to compensate for these limitations, data collected by the TRACE instrument provide a high spatial and temporal resolution set of observations. One of the most exciting unsolved problems in solar astrophysics is to understand why the corona maintains a temperature roughly two orders of magnitude higher than the underlying material. A detailed investigation of the coronal emission has provided constraints on models of the heating mechanism, since the temperature, density and evolution of emission rates for multiple ionic species are indicative of the mechanism(s) working to heat the corona. The corona appears to consist of multiple unresolved structures as well as resolved active region structures, called coronal loops. The purpose of the present work is to determine the characteristics of the unresolved background corona. Using the characterizations of the coronal unresolved background, results for loops after background subtraction are also presented. This work demonstrates the magnitude of the unresolved coronal emission with

  12. Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

    DOEpatents

    Chapman, Henry N.; Nugent, Keith A.

    2002-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  13. Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

    DOEpatents

    Chapman, Henry N.; Nugent, Keith A.

    2001-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  14. Berkeley extreme-ultraviolet airglow rocket spectrometer - BEARS

    NASA Technical Reports Server (NTRS)

    Cotton, D. M.; Chakrabarti, S.

    1992-01-01

    The Berkeley EUV airglow rocket spectrometer (BEARS) instrument is described. The instrument was designed in particular to measure the dominant lines of atomic oxygen in the FUV and EUV dayglow at 1356, 1304, 1027, and 989 A, which is the ultimate source of airglow emissions. The optical and mechanical design of the instrument, the detector, electronics, calibration, flight operations, and results are examined.

  15. Extreme ultraviolet observations from voyager 2 encounter with jupiter.

    PubMed

    Sandel, B R; Shemansky, D E; Broadfoot, A L; Bertaux, J L; Blamont, J E; Belton, M J; Ajello, J M; Holberg, J B; Atreya, S K; Donahue, T M; Moos, H W; Strobel, D F; McConnell, J C; Dalgarno, A; Goody, R; McElroy, M B; Takacs, P Z

    1979-11-23

    Extreme ultraviolet spectral observations of the Jovian planetary system made during the Voyager 2 encounter have extended our knowledge of many of the phenomena and physical processes discovered by the Voyager 1 ultraviolet spectrometer. In the 4 months between encounters, the radiation from Io's plasma torus has increased in intensity by a factor of about 2. This change was accompanied by a decrease in plasma temperature of about 30 percent. The high-latitude auroral zones have been positively associated with the magnetic projection of the plasma torus onto the planet. Emission in molecular hydrogen bands has been detected from the equatorial regions of Jupiter, indicating planetwide electron precipitation. Hydrogen Lyman alpha from the dark side of the planet has been measured at an intensity of about 1 kilorayleigh. An observation of the occultation of alpha Leonis by Jupiter was carried out successfully and the data are being analyzed in detail.

  16. Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Mojarad, N.; Hojeij, M.; Wang, L.; Gobrecht, J.; Ekinci, Y.

    2015-02-01

    All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ~3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists.All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ~3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm

  17. Extreme ultraviolet emission spectra of Gd and Tb ions

    SciTech Connect

    Kilbane, D.; O'Sullivan, G.

    2010-11-15

    Theoretical extreme ultraviolet emission spectra of gadolinium and terbium ions calculated with the Cowan suite of codes and the flexible atomic code (FAC) relativistic code are presented. 4d-4f and 4p-4d transitions give rise to unresolved transition arrays in a range of ions. The effects of configuration interaction are investigated for transitions between singly excited configurations. Optimization of emission at 6.775 nm and 6.515 nm is achieved for Gd and Tb ions, respectively, by consideration of plasma effects. The resulting synthetic spectra are compared with experimental spectra recorded using the laser produced plasma technique.

  18. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  19. Extreme ultraviolet spectrometer based on a transmission electron microscopy grid

    SciTech Connect

    Sistrunk, Emily; Gühr, Markus

    2014-12-12

    Here, we performed extreme ultraviolet spectroscopy using an 80 lines/mm transmission electron microscope mesh as the dispersive element. We also present the usefulness of this instrument for dispersing a high harmonic spectrum from the 13th to the 29th harmonic of a Ti:sapph laser, corresponding to a wavelength range from 60 to 27 nm. The resolution of the instrument is limited by the image size of the high harmonic generation region on the detector. Finally, the resolution in first order diffraction is under 2 nm over the entire spectral range with a resolving power around 30.

  20. Extreme ultraviolet spectrometer based on a transmission electron microscopy grid

    NASA Astrophysics Data System (ADS)

    Sistrunk, Emily; Gühr, Markus

    2015-01-01

    We performed extreme ultraviolet spectroscopy using an 80 lines/mm transmission electron microscope mesh as the dispersive element. We present the usefulness of this instrument for dispersing a high harmonic spectrum from the 13th to the 29th harmonic of a Ti:sapph laser, corresponding to a wavelength range from 60 to 27 nm. The resolution of the instrument is limited by the image size of the high harmonic generation region on the detector. The resolution in first order diffraction is under 2 nm over the entire spectral range with a resolving power around 30.

  1. Interferometry in the Extreme Ultraviolet and X-Ray

    NASA Technical Reports Server (NTRS)

    Cash, W.; Shipley, A.; Osterman, S.; Joy, M. K.

    2000-01-01

    We report on demonstration of an x-ray interferometer that uses plane mirrors at grazing incidence to create interference fringes in the extreme ultraviolet and soft x-ray portions of the spectrum. X-ray interferometry has historically been implemented through narrow band, diffractive systems that split the wavefront. Our system, by using two separate optical channels to create interference from two areas of the wavefront, has broad band response and much higher efficiency. We discuss some applications of this technique to astronomy and microscopy including the possibility of eventually capturing a micro-arcsecond image of a black hole.

  2. Simultaneous Extreme-Ultraviolet Explorer and Optical Observations of Ad Leonis: Evidence for Large Coronal Loops and the Neupert Effect in Stellar Flares

    NASA Technical Reports Server (NTRS)

    Hawley, Suzanne L.; Fisher, George H.; Simon, Theodore; Cully, Scott L.; Deustua, Susana E.; Jablonski, Marek; Johns-Krull, Christopher; Pettersen, Bjorn R.; Smith, Verne; Spiesman, William J.; Valenti, Jeffrey

    1995-01-01

    We report on the first simultaneous Extreme-Ultraviolet Explorer (EUVE) and optical observations of flares on the dMe flare star AD Leonis. The data show the following features: (1) Two flares (one large and one of moderate size) of several hours duration were observed in the EUV wavelength range; (2) Flare emission observed in the optical precedes the emission seen with EUVE; and (3) Several diminutions (DIMs) in the optical continuum were observed during the period of optical flare activity. To interpret these data, we develop a technique for deriving the coronal loop length from the observed rise and decay behavior of the EUV flare. The technique is generally applicable to existing and future coronal observations of stellar flares. We also determine the pressure, column depth, emission measure, loop cross-sectional area, and peak thermal energy during the two EUV flares, and the temperature, area coverage, and energy of the optical continuum emission. When the optical and coronal data are combined, we find convincing evidence of a stellar 'Neupert effect' which is a strong signature of chromospheric evaporation models. We then argue that the known spatial correlation of white-light emission with hard X-ray emission in solar flares, and the identification of the hard X-ray emission with nonthermal bremsstrahlung produced by accelerated electrons, provides evidence that flare heating on dMe stars is produced by the same electron precipitation mechanism that is inferred to occur on the Sun. We provide a thorough picture of the physical processes that are operative during the largest EUV flare, compare and contrast this picture with the canonical solar flare model, and conclude that the coronal loop length may be the most important factor in determining the flare rise time and energetics.

  3. Study of extreme-ultraviolet emission and properties of a coronal streamer from PROBA2/SWAP, HINODE/EIS and Mauna Loa Mk4 observations

    SciTech Connect

    Goryaev, F.; Slemzin, V.; Vainshtein, L.; Williams, David R.

    2014-02-01

    Wide-field extreme-ultraviolet (EUV) telescopes imaging in spectral bands sensitive to 1 MK plasma on the Sun often observe extended, ray-like coronal structures stretching radially from active regions to distances of 1.5-2 R {sub ☉}, which represent the EUV counterparts of white-light streamers. To explain this phenomenon, we investigated the properties of a streamer observed on 2010 October 20 and 21, by the PROBA2/SWAP EUV telescope together with the Hinode/EIS (HOP 165) and the Mauna Loa Mk4 white-light coronagraph. In the SWAP 174 Å band comprising the Fe IX-Fe XI lines, the streamer was detected to a distance of 2 R {sub ☉}. We assume that the EUV emission is dominated by collisional excitation and resonant scattering of monochromatic radiation coming from the underlying corona. Below 1.2 R {sub ☉}, the plasma density and temperature were derived from the Hinode/EIS data by a line-ratio method. Plasma conditions in the streamer and in the background corona above 1.2 R {sub ☉} from the disk center were determined by forward-modeling the emission that best fit the observational data in both EUV and white light. It was found that the plasma in the streamer above 1.2 R {sub ☉} is nearly isothermal, with a temperature of T = 1.43 ± 0.08 MK. The hydrostatic scale-height temperature determined from the evaluated density distribution was significantly higher (1.72 ± 0.08 MK), which suggests the existence of outward plasma flow along the streamer. We conclude that, inside the streamer, collisional excitation provided more than 90% of the observed EUV emission, whereas, in the background corona, the contribution of resonance scattering became comparable with that of collisions at R ≳ 2 R {sub ☉}.

  4. Study of Extreme-ultraviolet Emission and Properties of a Coronal Streamer from PROBA2/SWAP, Hinode/EIS and Mauna Loa Mk4 Observations

    NASA Astrophysics Data System (ADS)

    Goryaev, F.; Slemzin, V.; Vainshtein, L.; Williams, David R.

    2014-02-01

    Wide-field extreme-ultraviolet (EUV) telescopes imaging in spectral bands sensitive to 1 MK plasma on the Sun often observe extended, ray-like coronal structures stretching radially from active regions to distances of 1.5-2 R ⊙, which represent the EUV counterparts of white-light streamers. To explain this phenomenon, we investigated the properties of a streamer observed on 2010 October 20 and 21, by the PROBA2/SWAP EUV telescope together with the Hinode/EIS (HOP 165) and the Mauna Loa Mk4 white-light coronagraph. In the SWAP 174 Å band comprising the Fe IX-Fe XI lines, the streamer was detected to a distance of 2 R ⊙. We assume that the EUV emission is dominated by collisional excitation and resonant scattering of monochromatic radiation coming from the underlying corona. Below 1.2 R ⊙, the plasma density and temperature were derived from the Hinode/EIS data by a line-ratio method. Plasma conditions in the streamer and in the background corona above 1.2 R ⊙ from the disk center were determined by forward-modeling the emission that best fit the observational data in both EUV and white light. It was found that the plasma in the streamer above 1.2 R ⊙ is nearly isothermal, with a temperature of T = 1.43 ± 0.08 MK. The hydrostatic scale-height temperature determined from the evaluated density distribution was significantly higher (1.72 ± 0.08 MK), which suggests the existence of outward plasma flow along the streamer. We conclude that, inside the streamer, collisional excitation provided more than 90% of the observed EUV emission, whereas, in the background corona, the contribution of resonance scattering became comparable with that of collisions at R >~ 2 R ⊙.

  5. Low-line edge roughness extreme ultraviolet photoresists of organotin carboxylates

    NASA Astrophysics Data System (ADS)

    Del Re, Ryan; Passarelli, James; Sortland, Miriam; Cardineau, Brian; Ekinci, Yasin; Buitrago, Elizabeth; Neisser, Mark; Freedman, Daniel A.; Brainard, Robert L.

    2015-10-01

    Pure thin films of organotin compounds have been lithographically evaluated using extreme ultraviolet lithography (EUVL, 13.5 nm). Twenty compounds of the type R2Sn) were spin-coated from solutions in toluene, exposed to EUV light, and developed in organic solvents. Exposures produced negative-tone contrast curves and dense-line patterns using interference lithography. Contrast-curve studies indicated that the photosensitivity is linearly related to the molecular weight of the carboxylate group bound to tin. Additionally, photosensitivity was found to be linearly related to free radical stability of the hydrocarbon group bound directly to tin (R=phenyl, butyl, and benzyl). Dense-line patterning capabilities varied, but two resists in particular show exceptionally good line edge roughness (LER). A resist composed of an amorphous film of )SnCC)2 (1) achieved 1.4 nm LER at 22-nm half-pitch patterning and a resist composed of )Sn) (2) achieved 1.1 nm LER at 35-nm half-pitch at high exposure doses (600 mJ/cm2). Two photoresists that use olefin-based carboxylates, )SnCCH (3) and )SnCC (4), demonstrated better photospeeds (5 mJ/cm2 and 27 mJ/cm2) but worse LER.

  6. A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

    SciTech Connect

    Dentinger, Paul M.; Cardinale, Gregory F.; Hunter, Luke L.; Talin, Albert Alec

    2003-12-01

    We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresist top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.

  7. Extreme ultraviolet and x-ray transition wavelengths in Rb XXIV

    NASA Astrophysics Data System (ADS)

    Indu, Khatri; Arun, Goyal; Sunny, Aggarwal; K. Singh, A.; Man, Mohan

    2015-10-01

    Energy levels, radiative rates, oscillator strengths and line strengths are reported for transitions among the lowest 97 levels of the (1s22s22p6) 3s23p2, 3s23p3d, 3s3p3, 3p4, 3s3p23d, and 3s23d2 configurations of Rb XXIV. A multiconfiguration Dirac-Fock (MCDF) method is adopted for the calculations. Radiative rates, oscillator strengths, and line strengths are provided for all electric dipole (E1), magnetic dipole (M1), electric quadrupole (E2), and magnetic quadrupole (M2) transitions from the ground level to all 97 levels, although calculations are performed for a much larger number of levels. To achieve the accuracy of the data, comparisons are provided with similar data obtained from the Flexible Atomic Code (FAC) and also with the available theoretical and experimental results. Our energy levels are found to be accurate to better than 1.2%. Wavelengths calculated are found to lie in EUV (extreme ultraviolet) and x-ray regions. Additionally, lifetimes for all 97 levels are obtained for the first time. The authors, Indu Khatri and Arun Goyal, were supported by the U. G. C., India for their Junior Research Fellowship and Man Mohan by the U.G.C. for Basic Science Research Fellowship.

  8. The High-Resolution Extreme-Ultraviolet Spectrum of N_2 by Electron Impact

    NASA Astrophysics Data System (ADS)

    Heays, Alan; Ajello, Joe M.; Aguilar, Alejandro; Lewis, Brenton R.; Gibson, Stephen

    2014-06-01

    We have recorded high-resolution (FWHM = 0.2 Å) extreme-ultraviolet (EUV, 800--1350 Å) laboratory emission spectra of molecular nitrogen excited by 20 and 100 eV electron impact under mostly optically thin conditions. From these, emission cross sections were determined for a total of 491 features arising from N_2 electronic-vibrational transitions and atomic N I and N II multiplets. Molecular emission was observed from those excited levels which are not completely predissociative and to ground-state vibrational levels as high as v=17. The frequently-blended molecular emission bands were disentangled with the aid of a coupled-channels model of excited N_2 states that includes the strong coupling between valence and Rydberg electronic states and the effects of predissociation. The observed emission bands probe a large range of vibrational motion so that internuclear-distance-dependent electronic transition moments could be deduced experimental. The coupled-channels model could then be used to predict the emission cross sections of unobserved bands and those that are optically thick in the experimental spectra. The electron-impact-induced fluorescence measurements and model were compared with Cassini UVIS observations of emissions from Titan's upper atmosphere.

  9. Extreme ultraviolet spectroscopy of the Seyfert 1 galaxy Markarian 478

    SciTech Connect

    Liedahl, D.A.; Paerels, F.; Hur, M.Y.; Kahn, S.M.; Fruscione, A.; Bowyer, S.

    1995-06-26

    The Seyfert 1 galaxy Mrk 478, observed during the EUVE all-sky survey, is the brightest EUV source among its class. The SW spectrum of this object shows evidence of discrete emission, although this interpretation is tentative, since the source spectrum must be extracted against a bright background. If the EUV flux is, in fact, composed partly of line emission, the authors attribute the discrete structure to emission from a collision-driven plasma at temperatures {approx_gt} 10{sup 6} K. In this context, they discuss some of the constraints imposed on the emission-line region by this observation.

  10. A POSSIBLE DETECTION OF A FAST-MODE EXTREME ULTRAVIOLET WAVE ASSOCIATED WITH A MINI CORONAL MASS EJECTION OBSERVED BY THE SOLAR DYNAMICS OBSERVATORY

    SciTech Connect

    Zheng Ruisheng; Jiang Yunchun; Hong Junchao; Yang Jiayan; Bi Yi; Yang Liheng; Yang Dan

    2011-10-01

    'Extreme ultraviolet (EUV) waves' are large-scale wavelike transients often associated with coronal mass ejections (CMEs). In this Letter, we present a possible detection of a fast-mode EUV wave associated with a mini-CME observed by the Solar Dynamics Observatory. On 2010 December 1, a small-scale EUV wave erupted near the disk center associated with a mini-CME, which showed all the low corona manifestations of a typical CME. The CME was triggered by the eruption of a mini-filament, with a typical length of about 30''. Although the eruption was tiny, the wave had the appearance of an almost semicircular front and propagated at a uniform velocity of 220-250 km s{sup -1} with very little angular dependence. The CME lateral expansion was asymmetric with an inclination toward north, and the southern footprints of the CME loops hardly shifted. The lateral expansion resulted in deep long-duration dimmings, showing the CME extent. Comparing the onset and the initial speed of the CME, the wave was likely triggered by the rapid expansion of the CME loops. Our analysis confirms that the small-scale EUV wave is a true wave, interpreted as a fast-mode wave.

  11. Generation of circularly polarized radiation from a compact plasma-based extreme ultraviolet light source for tabletop X-ray magnetic circular dichroism studies.

    PubMed

    Wilson, Daniel; Rudolf, Denis; Weier, Christian; Adam, Roman; Winkler, Gerrit; Frömter, Robert; Danylyuk, Serhiy; Bergmann, Klaus; Grützmacher, Detlev; Schneider, Claus M; Juschkin, Larissa

    2014-10-01

    Generation of circularly polarized light in the extreme ultraviolet (EUV) spectral region (about 25 eV-250 eV) is highly desirable for applications in spectroscopy and microscopy but very challenging to achieve in a small-scale laboratory. We present a compact apparatus for generation of linearly and circularly polarized EUV radiation from a gas-discharge plasma light source between 50 eV and 70 eV photon energy. In this spectral range, the 3p absorption edges of Fe (54 eV), Co (60 eV), and Ni (67 eV) offer a high magnetic contrast often employed for magneto-optical and electron spectroscopy as well as for magnetic imaging. We simulated and designed an instrument for generation of linearly and circularly polarized EUV radiation and performed polarimetric measurements of the degree of linear and circular polarization. Furthermore, we demonstrate first measurements of the X-ray magnetic circular dichroism at the Co 3p absorption edge with a plasma-based EUV light source. Our approach opens the door for laboratory-based, element-selective spectroscopy of magnetic materials and spectro-microscopy of ferromagnetic domains. PMID:25362374

  12. Generation of circularly polarized radiation from a compact plasma-based extreme ultraviolet light source for tabletop X-ray magnetic circular dichroism studies

    SciTech Connect

    Wilson, Daniel; Rudolf, Denis Juschkin, Larissa; Weier, Christian; Adam, Roman; Schneider, Claus M.; Winkler, Gerrit; Frömter, Robert; Danylyuk, Serhiy; Bergmann, Klaus; Grützmacher, Detlev

    2014-10-15

    Generation of circularly polarized light in the extreme ultraviolet (EUV) spectral region (about 25 eV–250 eV) is highly desirable for applications in spectroscopy and microscopy but very challenging to achieve in a small-scale laboratory. We present a compact apparatus for generation of linearly and circularly polarized EUV radiation from a gas-discharge plasma light source between 50 eV and 70 eV photon energy. In this spectral range, the 3p absorption edges of Fe (54 eV), Co (60 eV), and Ni (67 eV) offer a high magnetic contrast often employed for magneto-optical and electron spectroscopy as well as for magnetic imaging. We simulated and designed an instrument for generation of linearly and circularly polarized EUV radiation and performed polarimetric measurements of the degree of linear and circular polarization. Furthermore, we demonstrate first measurements of the X-ray magnetic circular dichroism at the Co 3p absorption edge with a plasma-based EUV light source. Our approach opens the door for laboratory-based, element-selective spectroscopy of magnetic materials and spectro-microscopy of ferromagnetic domains.

  13. The High-resolution Extreme-ultraviolet Spectrum of N2 by Electron Impact

    NASA Astrophysics Data System (ADS)

    Heays, A. N.; Ajello, J. M.; Aguilar, A.; Lewis, B. R.; Gibson, S. T.

    2014-04-01

    We have analyzed high-resolution (FWHM = 0.2 Å) extreme-ultraviolet (EUV, 800-1350 Å) laboratory emission spectra of molecular nitrogen excited by an electron impact at 20 and 100 eV under (mostly) optically thin, single-scattering experimental conditions. A total of 491 emission features were observed from N2 electronic-vibrational transitions and atomic N I and N II multiplets and their emission cross sections were measured. Molecular emission was observed at vibrationally excited ground-state levels as high as v'' = 17, from the a 1Π g , b 1Π u , and b'1Σ u + excited valence states and the Rydberg series c'n +1 1Σ u +, cn 1Π u , and on 1Π u for n between 3 and 9. The frequently blended molecular emission bands were disentangled with the aid of a sophisticated and predictive quantum-mechanical model of excited states that includes the strong coupling between valence and Rydberg electronic states and the effects of predissociation. Improved model parameters describing electronic transition moments were obtained from the experiment and allowed for a reliable prediction of the vibrationally summed electronic emission cross section, including an extrapolation to unobserved emission bands and those that are optically thick in the experimental spectra. Vibrationally dependent electronic excitation functions were inferred from a comparison of emission features following 20 and 100 eV electron-impact collisional excitation. The electron-impact-induced fluorescence measurements are compared with Cassini Ultraviolet Imaging Spectrograph observations of emissions from Titan's upper atmosphere.

  14. Nanoplasmonic generation of ultrashort EUV pulses

    NASA Astrophysics Data System (ADS)

    Choi, Joonhee; Lee, Dong-Hyub; Han, Seunghwoi; Park, In-Yong; Kim, Seungchul; Kim, Seung-Woo

    2012-10-01

    Ultrashort extreme-ultraviolet (EUV) light pulses are an important tool for time-resolved pump-probe spectroscopy to investigate the ultrafast dynamics of electrons in atoms and molecules. Among several methods available to generate ultrashort EUV light pulses, the nonlinear frequency upconversion process of high-harmonic generation (HHG) draws attention as it is capable of producing coherent EUV pulses with precise control of burst timing with respect to the driving near-infrared (NIR) femtosecond laser. In this report, we present and discuss our recent experimental data obtained by the plasmon-driven HHG method that generate EUV radiation by means of plasmonic nano-focusing of NIR femtosecond pulses. For experiment, metallic waveguides having a tapered hole of funnel shape inside were fabricated by adopting the focused-ion-beam process on a micro-cantilever substrate. The plasmonic field formed within the funnelwaveguides being coupled with the incident femtosecond pulse permitted intensity enhancement by a factor of ~350, which creates a hot spot of sub-wavelength size with intensities strong enough for HHG. Experimental results showed that with injection of noble gases into the funnel-waveguides, EUV radiation is generated up to wavelengths of 32 nm and 29.6 nm from Ar and Ne gas atoms, respectively. Further, it was observed that lower-order EUV harmonics are cut off in the HHG spectra by the tiny exit aperture of the funnel-waveguide.

  15. Lensless hyperspectral spectromicroscopy with a tabletop extreme-ultraviolet source

    NASA Astrophysics Data System (ADS)

    Gardner, Dennis F.; Zhang, Bosheng; Seaberg, Matthew H.; Shanblatt, Elisabeth R.; Porter, Christina L.; Karl, Robert; Mancuso, Christopher; Kapteyn, Henry C.; Murnane, Margaret M.; Adams, Daniel E.

    2016-03-01

    We demonstrate hyperspectral coherent imaging in the EUV spectral region for the first time, without the need for hardware-based wavelength separation. This new scheme of spectromicroscopy is the most efficient use of EUV photons for imaging because there is no energy loss from mirrors or monochromatizing optics. An EUV spectral comb from a tabletop high-harmonic source, centered at a wavelength of 30nm, illuminates the sample and the scattered light is collected on a pixel-array detector. Using a lensless imaging technique known as ptychographical information multiplexing, we simultaneously retrieve images of the spectral response of the sample at each individual harmonic. We show that the retrieved spectral amplitude and phase agrees with theoretical predictions. This work demonstrates the power of coherent EUV beams for rapid material identification with nanometer-scale resolution.

  16. High intensity vacuum ultraviolet and extreme ultraviolet production by noncollinear mixing in laser vaporized media

    NASA Astrophysics Data System (ADS)

    Todt, Michael A.; Albert, Daniel R.; Davis, H. Floyd

    2016-06-01

    A method is described for generating intense pulsed vacuum ultraviolet (VUV) and extreme ultraviolet (XUV) laser radiation by resonance enhanced four-wave mixing of commercial pulsed nanosecond lasers in laser vaporized mercury under windowless conditions. By employing noncollinear mixing of the input beams, the need of dispersive elements such as gratings for separating the VUV/XUV from the residual UV and visible beams is eliminated. A number of schemes are described, facilitating access to the 9.9-14.6 eV range. A simple and convenient scheme for generating wavelengths of 125 nm, 112 nm, and 104 nm (10 eV, 11 eV, and 12 eV) using two dye lasers without the need for dye changes is described.

  17. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak

    NASA Astrophysics Data System (ADS)

    Zhang, Ling; Morita, Shigeru; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Ohishi, Tetsutarou; Goto, Motoshi; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Dong, Chunfeng; Zhang, Hongmin; Huang, Xianli; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang

    2015-12-01

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm2 and pixel numbers of 1024 × 255 (26 × 26 μm2/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ0 = 3-4 pixels, where Δλ0 is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification.

  18. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak.

    PubMed

    Zhang, Ling; Morita, Shigeru; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Ohishi, Tetsutarou; Goto, Motoshi; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Dong, Chunfeng; Zhang, Hongmin; Huang, Xianli; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang

    2015-12-01

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm(2) and pixel numbers of 1024 × 255 (26 × 26 μm(2)/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ0 = 3-4 pixels, where Δλ0 is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification. PMID:26724029

  19. Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G. F.; Henderson, C. C.; Goldsmith, J. E. M.; Mangat, P. J. S.; Cobb, J.; Hector, S. D.

    1999-11-01

    In two separate experiments, we have successfully demonstrated the transfer of dense- and loose-pitch line/space (L/S) photoresist features, patterned with extreme ultraviolet (EUV) lithography, into an underlying hard mask material. In both experiments, a deep-UV photoresist ({approx}90 nm thick) was spin cast in bilayer format onto a hard mask (50-90 nm thick) and was subsequently exposed to EUV radiation using a 10x reduction EUV exposure system. The EUV reticle was fabricated at Motorola (Tempe, AZ) using a subtractive process with Ta-based absorbers on Mo/Si multilayer mask blanks. In the first set of experiments, following the EUV exposures, the L/S patterns were transferred first into a SiO{sub 2} hard mask (60 nm thick) using a reactive ion etch (RIE), and then into polysilicon (350 nm thick) using a triode-coupled plasma RIE etcher at the University of California, Berkeley, microfabrication facilities. The latter etch process, which produced steep (>85 degree sign ) sidewalls, employed a HBr/Cl chemistry with a large (>10:1) etch selectivity of polysilicon to silicon dioxide. In the second set of experiments, hard mask films of SiON (50 nm thick) and SiO{sub 2} (87 nm thick) were used. A RIE was performed at Motorola using a halogen gas chemistry that resulted in a hard mask-to-photoresist etch selectivity >3:1 and sidewall profile angles {>=}85 degree sign . Line edge roughness (LER) and linewidth critical dimension (CD) measurements were performed using Sandia's GORA(c) CD digital image analysis software. Low LER values (6-9 nm, 3{sigma}, one side) and good CD linearity (better than 10%) were demonstrated for the final pattern-transferred dense polysilicon L/S features from 80 to 175 nm. In addition, pattern transfer (into polysilicon) of loose-pitch (1:2) L/S features with CDs{>=}60 nm was demonstrated. (c) 1999 American Vacuum Society.

  20. Measurement of zone plate efficiencies in the extreme ultraviolet and applications to radiation monitors for absolute spectral emission

    NASA Astrophysics Data System (ADS)

    Seely, John; Holland, Glenn; Bremer, James C.; Zukowski, Tim; Feser, Michael; Feng, Yan; Kjornrattanawanich, Benjawan; Goray, Leonid

    2006-08-01

    The diffraction efficiencies of a Fresnel zone plate (ZP), fabricated by Xradia Inc. using the electron-beam writing technique, were measured using polarized, monochromatic synchrotron radiation in the extreme ultraviolet wavelength range 3.4-22 nm. The ZP had 2 mm diameter, 3330 zones, 150 nm outer zone width, and a 1 mm central occulter. The ZP was supported by a 100 nm thick Si 3N 4 membrane. The diffraction patterns were recorded by CMOS imagers with phosphor coatings and with 5.2 μm or 48 μm pixels. The focused +n orders (n=1-4), the diverging -1 order, and the undiffracted 0 order were observed as functions of wavelength and off-axis tilt angle. Sub-pixel focusing of the +n orders was achieved. The measured efficiency in the +1 order was in the 5% to 30% range with the phase-shift enhanced efficiency occurring at 8.3 nm where the gold bars are partially transmitting. The +2 and higher order efficiencies were much lower than the +1 order efficiency. The efficiencies were constant when the zone plate was tilted by angles up to +/-1° from the incident radiation beam. This work indicates the feasibility and benefits of using zone plates to measure the absolute EUV spectral emissions from solar and laboratory sources: relatively high EUV efficiency in the focused +1 order, good out-of-band rejection resulting from the low higher-order efficiencies and the ZP focusing properties, insensitivity to (unfocused) visible light scattered by the ZP, flat response with off-axis angle, and insensitivity to the polarization of the radiation based on the ZP circular symmetry. EUV sensors with Fresnel zone plates potentially have many advantages over existing sensors intended to accurately measure absolute EUV emission levels, such as those implemented on the GOES N-P satellites that use transmission gratings which have off-axis sensitivity variations and poor out-of-band EUV and visible light rejection, and other solar and laboratory sensors using reflection gratings which

  1. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak

    SciTech Connect

    Zhang, Ling; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang; Morita, Shigeru; Ohishi, Tetsutarou; Goto, Motoshi; Dong, Chunfeng; and others

    2015-12-15

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm{sup 2} and pixel numbers of 1024 × 255 (26 × 26 μm{sup 2}/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ{sub 0} = 3-4 pixels, where Δλ{sub 0} is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification.

  2. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak.

    PubMed

    Zhang, Ling; Morita, Shigeru; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Ohishi, Tetsutarou; Goto, Motoshi; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Dong, Chunfeng; Zhang, Hongmin; Huang, Xianli; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang

    2015-12-01

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm(2) and pixel numbers of 1024 × 255 (26 × 26 μm(2)/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ0 = 3-4 pixels, where Δλ0 is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification.

  3. QUADRATURE OBSERVATIONS OF WAVE AND NON-WAVE COMPONENTS AND THEIR DECOUPLING IN AN EXTREME-ULTRAVIOLET WAVE EVENT

    SciTech Connect

    Dai, Y.; Ding, M. D.; Chen, P. F.; Zhang, J.

    2012-11-01

    We report quadrature observations of an extreme-ultraviolet (EUV) wave event on 2011 January 27 obtained by the Extreme Ultraviolet Imager on board the Solar Terrestrial Relations Observatory, and the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory. Two components are revealed in the EUV wave event. A primary front is launched with an initial speed of {approx}440 km s{sup -1}. It appears that significant emission enhancement occurs in the hotter channel while deep emission reduction occurs in the cooler channel. When the primary front encounters a large coronal loop system and slows down, a secondary, much fainter, front emanates from the primary front with a relatively higher starting speed of {approx}550 km s{sup -1}. Afterward, the two fronts propagate independently with increasing separation. The primary front finally stops at a magnetic separatrix, while the secondary front travels farther until it fades out. In addition, upon the arrival of the secondary front, transverse oscillations of a prominence are triggered. We suggest that the two components are of different natures. The primary front belongs to a non-wave coronal mass ejection (CME) component, which can be reasonably explained with the field-line stretching model. The multi-temperature behavior may be caused by considerable heating due to nonlinear adiabatic compression on the CME frontal loop. As for the secondary front, it is most likely a linear fast-mode magnetohydrodynamic wave that propagates through a medium of the typical coronal temperature. X-ray and radio data provide us with complementary evidence in support of the above scenario.

  4. Secondary Electrons in EUV Lithography

    SciTech Connect

    Torok, Justin; Re, Ryan Del; Herbol, Henry; Das, Sanjana; Bocharova, Irina; Paolucci, Angela; Ocola, Leonidas E.; Ventrice Jr., Carl; Lifshin, Eric; Denbeaux, Greg; Brainard, Robert L.

    2013-01-01

    Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUV-induced acid generation is therefore needed for the development of higher performance resists

  5. Application of natural linear polysaccharide to green resist polymers for electron beam and extreme-ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Oshima, Akihiro; Oyama, Tomoko G.; Ito, Kenta; Sugahara, Kigen; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi; Hanabata, Makoto

    2014-11-01

    The application of natural linear polysaccharide to green resist polymers was demonstrated for electron beam (EB) and extreme-ultraviolet (EUV) lithography using organic-solvent-free water spin-coating and tetramethylammonium hydroxide (TMAH)-free water-developable techniques. The water spin-coating and water-developable processes in a green resist material were carried out on wafers because of the water solubility of natural polysaccharides for an environmentally friendly manufacturing process for next-generation electronic devices. The developed green resist material with a weight-average molecular weight of 83,000 and 70 mol % hydroxyl groups as a water-developable feature was found to have acceptable properties such as spin-coat ability on 200 mm wafers, prediction sensitivity to EUV at the wavelengths of 6.7 and 13.5 nm, a high contrast of the water dissolution rate before and after EB irradiation, pillar patterns of 100-400 nm with a high EB sensitivity of 10 µC/cm2, and etch selectivity with a silicon-based middle layer in CF4 plasma treatment.

  6. Highly selective etching of SnO2 absorber in binary mask structure for extreme ultra-violet lithography.

    PubMed

    Lee, Soo Jin; Jung, Chang Yong; Park, Sung Jin; Hwangbo, Chang Kweun; Seo, Hwan Seok; Kim, Sung Soo; Lee, Nae-Eung

    2012-04-01

    Among the core EUVL (extreme ultra-violet lithography) technologies for nanoscale patterning below the 30 nm node for Si chip manufacturing, new materials and fabrication processes for high-performance EUVL masks are of considerable importance due to the use of new reflective optics. In this work, the selective etching of SnO2 (tin oxide) as a new absorber material, with high EUV absorbance due to its large extinction coefficient, for the binary mask structure of SnO2 (absorber layer)/Ru (capping/etch stop layer)/Mo-Si multilayer (reflective layer)/Si (substrate), was investigated. Because infinitely high selectivity of the SnO2 layer to the Ru ESL is required due to the ultrathin nature of the Ru layer, various etch parameters were assessed in the inductively coupled Cl2/Ar plasmas in order to find the process window required for infinitely high etch selectivity of the SnO2 layer. The results showed that the gas flow ratio and V(dc) value play an important role in determining the process window for the infinitely high etch selectivity of SnO2 to Ru ESL. The high EUV-absorbance SnO2 layer, patternable by a dry process, allows a smaller absorber thickness, which can mitigate the geometric shadowing effects observed for high-performance binary EUVL masks.

  7. Design of three-mirror illumination system with free-form fly's eye for extreme ultraviolet lithography.

    PubMed

    Mei, Qiuli; Li, Yanqiu

    2015-03-10

    The low source power is one of the major challenges that hinder the extreme ultraviolet lithography from high volume manufacturing. To alleviate the source development pressure, a high-efficiency illumination system with three mirrors is proposed, based on the authors' knowledge, for the first time. Free-form fly's eye is introduced into the system to get a qualified arc-shaped irradiance distribution on the reticle. A method integrated with a numerical method and optimization to design the free-form surface is given in detail. The transfer efficiency of the system is much higher than that of the four-mirror configuration employed in the EUV exposure platform. Compared with the previous high-efficiency illumination system with two mirrors, this configuration can ensure a good uniformity and will not increase the objective design difficulty or affect the image quality of the objective. Simulation result of the design with three mirrors shows the uniformity on the reticle is about 95.5%, and the energy efficiency is about 25.4%. It indicates that the system is effective in enhancing the efficiency and potential to promote the EUV lithography into high volume manufacturing. PMID:25968388

  8. OFF-LIMB SOLAR CORONAL WAVEFRONTS FROM SDO/AIA EXTREME-ULTRAVIOLET OBSERVATIONS-IMPLICATIONS FOR PARTICLE PRODUCTION

    SciTech Connect

    Kozarev, K. A.; Korreck, K. E.; Weber, M. A.; Lobzin, V. V.; Schwadron, N. A.

    2011-06-01

    We derive kinematic properties for two recent solar coronal transient waves observed off the western solar limb with the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO) mission. The two waves occurred over {approx}10 minute intervals on consecutive days-2010 June 12 and 13. For the first time, off-limb waves are imaged with a high 12 s cadence, making possible detailed analysis of these transients in the low corona between {approx}1.1 and 2.0 solar radii (R{sub S} ). We use observations in the 193 and 211 A AIA channels to constrain the kinematics of both waves. We obtain initial velocities for the two fronts of {approx}1287 and {approx}736 km s{sup -1}, and accelerations of -1170 and -800 m s{sup -2}, respectively. Additionally, differential emission measure analysis shows the June 13 wave is consistent with a weak shock. Extreme-ultraviolet (EUV) wave positions are correlated with positions from simultaneous type II radio burst observations. We find good temporal and height association between the two, suggesting that the waves may be the EUV signatures of coronal shocks. Furthermore, the events are associated with significant increases in proton fluxes at 1 AU, possibly related to how waves propagate through the coronal magnetic field. Characterizing these coronal transients will be key to connecting their properties with energetic particle production close to the Sun.

  9. STEREOSCOPIC DETERMINATION OF HEIGHTS OF EXTREME ULTRAVIOLET BRIGHT POINTS USING DATA TAKEN BY SECCHI/EUVI ABOARD STEREO

    SciTech Connect

    Kwon, Ryun-Young; Chae, Jongchul; Zhang Jie

    2010-05-01

    We measure the heights of EUV bright points (BPs) above the solar surface by applying a stereoscopic method to the data taken by the Solar TErrestrial RElations Observatory/SECCHI/Extreme UltraViolet Imager (EUVI). We have developed a three-dimensional reconstruction method for point-like features such as BPs using the simple principle that the position of a point in the three-dimensional space is specified as the intersection of two lines of sight. From a set of data consisting of EUVI 171 A, 195 A, 284 A, and 304 A images taken on 11 days arbitrarily selected during a period of 14 months, we have identified and analyzed 210 individual BPs that were visible on all four passband images and smaller than 30 Mm. The BPs seen in the 304 A images have an average height of 4.4 Mm, and are often associated with the legs of coronal loops. In the 171 A, 195 A, and 284 A images the BPs appear loop-shaped, and have average heights of 5.1, 6.7, and 6.1 Mm, respectively. Moreover, there is a tendency that overlying loops are filled with hotter plasmas. The average heights of BPs in 171 A, 195 A, and 284 A passbands are roughly twice the corresponding average lengths. Our results support the notion that an EUV BP represents a system of small loops with temperature stratification like flaring loops, being consistent with the magnetic reconnection origin.

  10. Theoretical study of relationships among resolution, line width roughness, and sensitivity of chemically amplified extreme ultraviolet resists with photodecomposable quenchers

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2016-11-01

    The resolution of chemically amplified extreme ultraviolet (EUV) resists has reached 13–15 nm. However, the line width roughness (LWR) and sensitivity are still inadequate for their application to the high-volume production of semiconductor devices. In this study, the performance of chemically amplified resists with photodecomposable quenchers were investigated by simulation based on the sensitization and reaction mechanisms of chemically amplified EUV resists. The relationships among resolution, LWR, and sensitivity were evaluated in the half-pitch ranges of 12–16 nm. The requirements for 20 mJ cm‑2 and 10% critical dimension (CD) LWR are considered to be within the physical limits in the half-pitch range of 12–16 nm when an optical image with a contrast of 1 (normalized image log slope of π) is given. Depending on the given image quality and the required sensitivity, the optimization of sensitizer concentration and the increase in resist absorption coefficient and/or effective reaction radius for deprotection are required to achieve 10% CD LWR.

  11. Soft X-ray irradiance measured by the Solar Aspect Monitor on the Solar Dynamic Observatory Extreme ultraviolet Variability Experiment

    NASA Astrophysics Data System (ADS)

    Lin, C. Y.; Bailey, S. M.; Jones, A.; Woodraska, D.; Caspi, A.; Woods, T. N.; Eparvier, F. G.; Wieman, S. R.; Didkovsky, L. V.

    2016-04-01

    The Solar Aspect Monitor (SAM) is a pinhole camera on the Extreme ultraviolet Variability Experiment (EVE) aboard the Solar Dynamics Observatory. SAM projects the solar disk onto the CCD through a metallic filter designed to allow only solar photons shortward of 7 nm to pass. Contamination from energetic particles and out-of-band irradiance is, however, significant in the SAM observations. We present a technique for isolating the 0.01-7 nm integrated irradiance from the SAM signal to produce the first results of broadband irradiance for the time period from May 2010 to May 2014. The results of this analysis agree with a similar data product from EVE's EUV SpectroPhotometer to within 25%. We compare our results with measurements from the Student Nitric Oxide Explorer Solar X-ray Photometer and the Thermosphere Ionosphere Mesosphere Energetics and Dynamics Solar EUV Experiment at similar levels of solar activity. We show that the full-disk SAM broadband results compared well to the other measurements of the 0.01-7 nm irradiance. We also explore SAM's capability toward resolving spatial contribution from regions of solar disk in irradiance and demonstrate this feature with a case study of several strong flares that erupted from active regions on 11 March 2011.

  12. Quantitative analysis of electron energy loss spectra and modelling of optical properties of multilayer systems for extreme ultraviolet radiation regime

    SciTech Connect

    Gusenleitner, S.; Hauschild, D.; Reinert, F.; Handick, E.

    2014-03-28

    Ruthenium capped multilayer coatings for use in the extreme ultraviolet (EUV) radiation regime have manifold applications in science and industry. Although the Ru cap shall protect the reflecting multilayers, the surface of the heterostructures suffers from contamination issues and surface degradation. In order to get a better understanding of the effects of these impurities on the optical parameters, reflection electron energy loss spectroscopy (REELS) measurements of contaminated and H cleaned Ru multilayer coatings were taken at various primary electron beam energies. Experiments conducted at low primary beam energies between 100 eV and 1000 eV are very surface sensitive due to the short inelastic mean free path of the electrons in this energy range. Therefore, influences of the surface condition on the above mentioned characteristics can be appraised. In this paper, it can be shown that carbon and oxide impurities on the mirror surface decrease the transmission of the Ru cap by about 0.75% and the overall reflectance of the device is impaired as the main share of the non-transmitted EUV light is absorbed in the contamination layer.

  13. Extending resolution limits of EUV resist materials

    NASA Astrophysics Data System (ADS)

    Krysak, Marie; Leeson, Michael; Han, Eungnak; Blackwell, James; Harlson, Shane

    2015-03-01

    Extreme ultraviolet lithography (EUVL) technology continues to progress and remains a viable candidate for next generation lithography1, which drives the need for EUV resists capable of high resolution with high sensitivity and low LWR. While chemically amplified resists (CARs) have demonstrated the ability to pattern 12nm half-pitch features2, pattern collapse continues to limit their ultimate resolution. We have taken multiple approaches to extend resist capabilities past these limits. Recent results in pattern collapse mitigation using a resist encapsulation and etch back strategy will be discussed. We continue to investigate EUV patterning of semi-inorganic resists to simultaneously increase EUV photon absorption and extend mechanical strength beyond CAR capabilities. The limitations of metal oxide-based nanoparticle photoresists have been investigated, and have provided key insights to further understanding the mechanism of this class of materials.

  14. Pd/B4C/Y multilayer coatings for extreme ultraviolet applications near 10  nm wavelength.

    PubMed

    Windt, David L; Gullikson, Eric M

    2015-06-20

    A new extreme ultraviolet (EUV) multilayer coating has been developed comprising Pd and Y layers with thin B4C barrier layers at each interface, for normal incidence applications near 10 nm wavelength. Periodic, nonperiodic, and dual-stack coatings have been investigated and compared with similar structures comprising either Mo/Y or Pd/B4C bilayers. We find that Pd/B4C/Y multilayers provide higher reflectance than either Mo/Y or Pd/B4C, with much lower film stress than Pd/B4C. We have also investigated the performance of periodic multilayers comprising repetitions of Pd/Y, Ru/Y, or Ru/B4C/Y, as well as Pd/B4C multilayers deposited using reactive sputtering with an Ar:N2 gas mixture in order to reduce stress: these material combinations were all found to provide poor EUV performance. The temporal stability of a periodic Pd/B4C/Y multilayer stored in air was investigated over a period of 16 months, and a slight reduction in peak reflectance was observed. Periodic Pd/B4C/Y multilayers were also found to be thermally stable up to 100°C; at higher temperatures (200°C and 300°C) we observe a slight reduction in peak reflectance and a slight increase in multilayer period. High-resolution transmission electron microscopy and selected area diffraction of an as-deposited Pd/B4C/Y film indicates a fully amorphous structure, with interfaces that are both smoother and more abrupt than those observed in a comparable Pd/B4C multilayer in which the Pd layers are polycrystalline. The new Pd/B4C/Y multilayers are suitable for normal-incidence imaging and spectroscopy applications, including solar physics, plasma physics, high-brightness EUV light sources, and others. PMID:26193039

  15. Deposition and characterization of B4C/CeO2 multilayers at 6.x nm extreme ultraviolet wavelengths

    NASA Astrophysics Data System (ADS)

    Sertsu, M. G.; Giglia, A.; Brose, S.; Park, D.; Wang, Z. S.; Mayer, J.; Juschkin, L.; Nicolosi, P.

    2016-03-01

    New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovative experiments enables detailed study of optical properties, structural properties, and interface profiles of the multilayers in order to open up a room for further optimization of the manufacturing process. The interface profile is visualized by high-angle annular dark-field imaging which provides highly sensitive contrast to atomic number. Synchrotron based at-wavelength extreme ultraviolet (EUV) reflectance measurements near the boron (B) absorption edge allow derivation of optical parameters with high sensitivity to local atom interactions. X-ray reflectivity measurements at Cu-Kalpha (8 keV ) determine the period of multilayers with high in-depth resolution. By combining these measurements and choosing robust nonlinear curve fitting algorithms, accuracy of the results has been significantly improved. It also enables a comprehensive characterization of multilayers. Interface diffusion is determined to be a major cause for the low reflectivity performance. Optical constants of B4C and CeO2 layers are derived in EUV wavelengths. Besides, optical properties and asymmetric thicknesses of inter-diffusion layers (interlayers) in EUV wavelengths near the boron edge are determined. Finally, ideal reflectivity of the B4C/CeO2 combination is calculated by using optical constants derived from the proposed measurements in order to evaluate the potentiality of the design.

  16. Method for the protection of extreme ultraviolet lithography optics

    DOEpatents

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  17. Extreme ultraviolet observations from voyager 1 encounter with jupiter.

    PubMed

    Broadfoot, A L; Belton, M J; Takacs, P Z; Sandel, B R; Shemansky, D E; Holberg, J B; Ajello, J M; Atreya, S K; Donahue, T M; Moos, H W; Bertaux, J L; Blamont, J E; Strobel, D F; McConnell, J C; Dalgarno, A; Goody, R; McElroy, M B

    1979-06-01

    Observations of the optical extreme ultraviolet spectrum of the Jupiter planetary system during the Voyager 1 encounter have revealed previously undetected physical processes of significant proportions. Bright emission lines of S III, S IV, and O III indicating an electron temperature of 10(5) K have been identified in preliminary analyses of the Io plasma torus spectrum. Strong auroral atomic and molecular hydrogen emissions have been observed in the polar regions of Jupiter near magnetic field lines that map the torus into the atmosphere of Jupiter. The observed resonance scattering of solar hydrogen Lyman alpha by the atmosphere of Jupiter and the solar occultation experiment suggest a hot thermosphere (>/= 1000 K) wvith a large atomic hydrogen abundance. A stellar occultation by Ganymede indicates that its atmosphere is at most an exosphere.

  18. Upgrade of absolute extreme ultraviolet diagnostic on J-TEXT

    SciTech Connect

    Zhang, X. L.; Cheng, Z. F. Hou, S. Y.; Zhuang, G.; Luo, J.

    2014-11-15

    The absolute extreme ultraviolet (AXUV) diagnostic system is used for radiation observation on J-TEXT tokamak [J. Zhang, G. Zhuang, Z. J. Wang, Y. H. Ding, X. Q. Zhang, and Y. J. Tang, Rev. Sci. Instrum. 81, 073509 (2010)]. The upgrade of the AXUV system is aimed to improve the spatial resolution and provide a three-dimensional image on J-TEXT. The new system consists of 12 AXUV arrays (4 AXUV16ELG arrays, 8 AXUV20ELG arrays). The spatial resolution in the cross-section is 21 mm for the AXUV16ELG arrays and 17 mm for the AXUV20ELG arrays. The pre-amplifier is also upgraded for a higher signal to noise ratio. By upgrading the AXUV imaging system, a more accurate observation on the radiation information is obtained.

  19. Ultrafast Extreme Ultraviolet Absorption Spectroscopy of Methylammonium Lead Iodide Perovskite

    NASA Astrophysics Data System (ADS)

    Verkamp, Max A.; Lin, Ming-Fu; Ryland, Elizabeth S.; Vura-Weis, Josh

    2016-06-01

    Methylammonium lead iodide (perovskite) is a leading candidate for use in next-generation solar cell devices. However, the photophysics responsible for its strong photovoltaic qualities are not fully understood. Ultrafast extreme ultraviolet (XUV) absorption was used to investigate electron and hole dynamics in perovskite by observing transitions from a common inner-shell level (I 4d) to the valence and conduction bands. Ultrashort (30 fs) pulses of XUV radiation with a broad spectrum (40-70 eV) were generated via high-harmonic generation using a tabletop instrument. Transient absorption measurements with visible pump and XUV probe directly observed the relaxation of charge carriers in perovskite after above-band excitation in the femtosecond and picosecond time ranges.

  20. Electron impact excitation of argon in the extreme vacuum ultraviolet

    NASA Technical Reports Server (NTRS)

    Mentall, J. E.; Morgan, H. D.

    1976-01-01

    Polarization-free excitation cross sections in the extreme vacuum ultraviolet have been measured for electron impact on Ar. Observed spectral features were those lines of Ar I and Ar II which lie between 700 and 1100 A. Excitation functions were measured for the Ar I resonance line at 1048 A and the Ar II resonance line at 920 A. Peak cross sections for these two lines were found to be (39.4 plus or minus 7.9) x 10 to the -18th and (6.9 plus or minus 1.4) x 10 to the -18th, respectively. At low energies, excitation of the Ar II resonance line is dominated by an electron exchange transition.

  1. Extreme ultraviolet spectrograph ATM experiment S082B.

    PubMed

    Bartoe, J D; Brueckner, G E; Purcell, J D; Tousey, R

    1977-04-01

    The extreme ultraviolet, double-dispersion, photographic spectrograph, Apollo Telescope Mount (ATM) Experiment S082B on Skylab is described. Novel features were the use of a predisperser grating with a ruling whose spacing varied approximately linearly with distance for the purpose of increasing the instrument speed by reducing the astigmatism and a photoelectric servo-system to stabilize to 1 sec of arc the solar image at various near-limb positions. The 970-3940-A range was covered in two sections with effective lambda/Deltalambda congruent with 30,000 from 1100 A to 1970 A. The spatial resolution was 2 x 60 solar sec of arc. During the Skylab mission 6400 exposures were made with the instrument pointed by an astronaut at selected and recorded'solar positions.

  2. Extreme ultraviolet mask substrate surface roughness effects on lithography patterning

    SciTech Connect

    George, Simi; Naulleau, Patrick; Salmassi, Farhad; Mochi, Iacopo; Gullikson, Eric; Goldberg, Kenneth; Anderson, Erik

    2010-06-21

    In extreme ultraviolet lithography exposure systems, mask substrate roughness induced scatter contributes to LER at the image plane. In this paper, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programmed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. We find that the roughness measurements by top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. We suggest at wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects.

  3. Ultrafast Extreme Ultraviolet Induced Isomerization of Acetylene Cations

    SciTech Connect

    Jiang, Y.; Rudenko, Artem; Herrwerth, O.; Foucar, L.; Kurka, M.; Kuhnel, K.; Lezius, M.; Kling, Matthias; van Tilborg, Jeroen; Belkacem, Ali; Ueda, K.; Dusterer, S.; Treusch, R.; Schroter, Claus-Dieter; Moshammer, Robbert; Ullrich, Joachim

    2011-06-17

    Ultrafast isomerization of acetylene cations ([HC = CH]{sup +}) in the low-lying excited A{sup 2}{Sigma}{sub g}{sup +} state, populated by the absorption of extreme ultraviolet (XUV) photons (38 eV), has been observed at the Free Electron Laser in Hamburg, (FLASH). Recording coincident fragments C{sup +} + CH{sub 2}{sup +} as a function of time between XUV-pump and -probe pulses, generated by a split-mirror device, we find an isomerization time of 52 {+-} 15 fs in a kinetic energy release (KER) window of 5.8 < KER < 8 eV, providing clear evidence for the existence of a fast, nonradiative decay channel.

  4. Ultrafast Extreme Ultraviolet Induced Isomerization of Acetylene Cations

    SciTech Connect

    Jiang, Y. H.; Kurka, M.; Kuehnel, K. U.; Schroeter, C. D.; Moshammer, R.; Rudenko, A.; Foucar, L.; Herrwerth, O.; Lezius, M.; Kling, M. F.; Tilborg, J. van; Belkacem, A.; Ueda, K.; Duesterer, S.; Treusch, R.; Ullrich, J.

    2010-12-31

    Ultrafast isomerization of acetylene cations ([HC=CH]{sup +}) in the low-lying excited A{sup 2}{Sigma}{sub g}{sup +} state, populated by the absorption of extreme ultraviolet (XUV) photons (38 eV), has been observed at the Free Electron Laser in Hamburg, (FLASH). Recording coincident fragments C{sup +}+CH{sub 2}{sup +} as a function of time between XUV-pump and -probe pulses, generated by a split-mirror device, we find an isomerization time of 52{+-}15 fs in a kinetic energy release (KER) window of 5.8

  5. Extreme ultraviolet spectra of highly ionized oxygen and fluorine

    NASA Technical Reports Server (NTRS)

    Pegg, D. J.; Griffin, P. M.; Haselton, H. H.; Laubert, R.; Mowat, J. R.; Thoe, R. S.; Peterson, R. S.; Sellin, I. A.

    1974-01-01

    The foil-excitation method has been used to study the extreme ultraviolet spectra of highly ionized oxygen and fluorine. Several previously unreported lines in heliumlike fluorine are reported and other newly reported lines in heliumlike oxygen have been measured to higher accuracy. Included in the measurements are certain heliumlike oxygen transitions of significance in interpretation of solar-flare spectral observations. The wavelength determinations are usually in good agreement with calculated results which includes relativistic corrections, but discrepancies arise when nonrelativistic calculations are used. A comparison of the present results and those recently obtained by theta-pinch and laser-induced plasma sources is made for both heliumlike and lithiumlike ions; a few discrepancies occur, with results in most cases in better agreement with relativistically corrected calculations. Certain unidentified lines in the spectra may be attributable to radiative transitions between quartet states of lithiumlike ions.

  6. Four-wave mixing experiments with extreme ultraviolet transient gratings

    NASA Astrophysics Data System (ADS)

    Bencivenga, F.; Cucini, R.; Capotondi, F.; Battistoni, A.; Mincigrucci, R.; Giangrisostomi, E.; Gessini, A.; Manfredda, M.; Nikolov, I. P.; Pedersoli, E.; Principi, E.; Svetina, C.; Parisse, P.; Casolari, F.; Danailov, M. B.; Kiskinova, M.; Masciovecchio, C.

    2015-04-01

    Four-wave mixing (FWM) processes, based on third-order nonlinear light-matter interactions, can combine ultrafast time resolution with energy and wavevector selectivity, and enable the exploration of dynamics inaccessible by linear methods. The coherent and multi-wave nature of the FWM approach has been crucial in the development of advanced technologies, such as silicon photonics, subwavelength imaging and quantum communications. All these technologies operate at optical wavelengths, which limits the spatial resolution and does not allow the probing of excitations with energy in the electronvolt range. Extension to shorter wavelengths--that is, the extreme ultraviolet and soft-X-ray ranges--would allow the spatial resolution to be improved and the excitation energy range to be expanded, as well as enabling elemental selectivity to be achieved by exploiting core resonances. So far, FWM applications at such wavelengths have been prevented by the absence of coherent sources of sufficient brightness and of suitable experimental set-ups. Here we show how transient gratings, generated by the interference of coherent extreme-ultraviolet pulses delivered by the FERMI free-electron laser, can be used to stimulate FWM processes at suboptical wavelengths. Furthermore, we have demonstrated the possibility of observing the time evolution of the FWM signal, which shows the dynamics of coherent excitations as molecular vibrations. This result opens the way to FWM with nanometre spatial resolution and elemental selectivity, which, for example, would enable the investigation of charge-transfer dynamics. The theoretical possibility of realizing these applications has already stimulated ongoing developments of free-electron lasers: our results show that FWM at suboptical wavelengths is feasible, and we hope that they will enable advances in present and future photon sources.

  7. Four-wave mixing experiments with extreme ultraviolet transient gratings.

    PubMed

    Bencivenga, F; Cucini, R; Capotondi, F; Battistoni, A; Mincigrucci, R; Giangrisostomi, E; Gessini, A; Manfredda, M; Nikolov, I P; Pedersoli, E; Principi, E; Svetina, C; Parisse, P; Casolari, F; Danailov, M B; Kiskinova, M; Masciovecchio, C

    2015-04-01

    Four-wave mixing (FWM) processes, based on third-order nonlinear light-matter interactions, can combine ultrafast time resolution with energy and wavevector selectivity, and enable the exploration of dynamics inaccessible by linear methods. The coherent and multi-wave nature of the FWM approach has been crucial in the development of advanced technologies, such as silicon photonics, subwavelength imaging and quantum communications. All these technologies operate at optical wavelengths, which limits the spatial resolution and does not allow the probing of excitations with energy in the electronvolt range. Extension to shorter wavelengths--that is, the extreme ultraviolet and soft-X-ray ranges--would allow the spatial resolution to be improved and the excitation energy range to be expanded, as well as enabling elemental selectivity to be achieved by exploiting core resonances. So far, FWM applications at such wavelengths have been prevented by the absence of coherent sources of sufficient brightness and of suitable experimental set-ups. Here we show how transient gratings, generated by the interference of coherent extreme-ultraviolet pulses delivered by the FERMI free-electron laser, can be used to stimulate FWM processes at suboptical wavelengths. Furthermore, we have demonstrated the possibility of observing the time evolution of the FWM signal, which shows the dynamics of coherent excitations as molecular vibrations. This result opens the way to FWM with nanometre spatial resolution and elemental selectivity, which, for example, would enable the investigation of charge-transfer dynamics. The theoretical possibility of realizing these applications has already stimulated ongoing developments of free-electron lasers: our results show that FWM at suboptical wavelengths is feasible, and we hope that they will enable advances in present and future photon sources.

  8. Development of a laboratory extreme-ultraviolet lithography tool

    SciTech Connect

    Tichenor, D.A.; Kubiak, G.D.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H.; Birtola, S.R.; Jin, P.S.; Arling, R.W.; Ray-Chaudhuri, A.K.; Sweatt, W.C.; Chow, W.W.; Bjorkholm, J.E.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Fetter, L.A.; Wood, O.R. II; Waskiewicz, W.K.; White, D.L.; Windt, D.L.; Jewell, T.E.

    1994-04-01

    The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzchild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.

  9. Sensitivity calibration of an imaging extreme ultraviolet spectrometer-detector system for determining the efficiency of broadband extreme ultraviolet sources

    SciTech Connect

    Fuchs, S.; Roedel, C.; Bierbach, J.; Paz, A. E.; Foerster, E.; Paulus, G. G.; Krebs, M.; Haedrich, S.; Limpert, J.; Kuschel, S.; Wuensche, M.; Hilbert, V.; Zastrau, U.

    2013-02-15

    We report on the absolute sensitivity calibration of an extreme ultraviolet (XUV) spectrometer system that is frequently employed to study emission from short-pulse laser experiments. The XUV spectrometer, consisting of a toroidal mirror and a transmission grating, was characterized at a synchrotron source in respect of the ratio of the detected to the incident photon flux at photon energies ranging from 15.5 eV to 99 eV. The absolute calibration allows the determination of the XUV photon number emitted by laser-based XUV sources, e.g., high-harmonic generation from plasma surfaces or in gaseous media. We have demonstrated high-harmonic generation in gases and plasma surfaces providing 2.3 {mu}W and {mu}J per harmonic using the respective generation mechanisms.

  10. EUV mask surface cleaning effects on lithography process performance

    SciTech Connect

    George, Simi; Baclea-an, Lorie Mae; Naulleau, Patrick; Chen, Robert J.; Liang, Ted

    2010-06-18

    The reflective, multilayer based, mask architectures for extreme ultraviolet (EUV) lithography are highly susceptible to surface oxidation and contamination. As a result, EUV masks are expected to undergo cleaning processes in order to maintain the lifetimes necessary for high volume manufacturing. For this study, the impact of repetitive cleaning of EUV masks on imaging performance was evaluated. Two, high quality industry standard, EUV masks are used for this study with one of the masks undergoing repeated cleaning and the other one kept as a reference. Lithographic performance, in terms of process window analysis and line edge roughness, was monitored after every two cleans and compared to the reference mask performance. After 8x clean, minimal degradation is observed. The cleaning cycles will be continued until significant loss imaging fidelity is found.

  11. Platinum and palladium oxalates: positive-tone extreme ultraviolet resists

    NASA Astrophysics Data System (ADS)

    Sortland, Miriam; Hotalen, Jodi; Re, Ryan Del; Passarelli, James; Murphy, Michael; Kulmala, Tero S.; Ekinci, Yasin; Neisser, Mark; Freedman, Daniel A.; Brainard, Robert L.

    2015-10-01

    Here, we present platinum and palladium mononuclear complexes with EUV photosensitivity and lithographic performance. Many platinum and palladium complexes show little or no EUV sensitivity; however, we have found that metal carbonates and metal oxalates (L2M(CO3) and L2M(C2O4); M=Pt or Pd) are sensitive to EUV. The metal carbonates give negative-tone behavior. The most interesting result is that the metal oxalates give the first positive-tone EUV resists based on mononuclear organometallic compounds. In particular, (dppm)Pd(C2O4) (dppm=1,1-bis(diphenylphosphino)methane) (23) prints 30-nm dense lines with E of 50 mJ/cm2. Derivatives of (23) were synthesized to explore the relationship between the core metal and the resist sensitivity. The study showed that palladium-based resists are more sensitive than platinum-based resists. The photoreaction has been investigated for two of our most promising resists, (dppm)Pd(C2O4) (23) and EtPPdC2O4 (27). Our experiments suggest the loss of CO2 and the formation of a zerovalent L4Pd complex upon exposure to light. We have identified dppm2Pd(δ(P)23.6) as the main photoproduct for (23) and EtPPd (δ(P)32.7) as the main photoproduct for (27).

  12. Observation of a Quasiperiodic Pulsation in Hard X-Ray, Radio, and Extreme-ultraviolet Wavelengths

    NASA Astrophysics Data System (ADS)

    Kumar, Pankaj; Nakariakov, Valery M.; Cho, Kyung-Suk

    2016-05-01

    We present a multiwavelength analysis of a quasiperiodic pulsation (QPP) observed in the hard X-ray (HXR), radio, and extreme-ultraviolet (EUV) channels during an M1.9 flare that occurred on 2011 September 23-24. The nonthermal HXR emission in 25-50 keV observed by RHESSI shows five distinct impulsive peaks of decaying amplitude with a period of about 3 minutes. A similar QPP was observed in the microwave emission recorded by the Nobeyama Radioheliograph and Polarimeter in the 2, 3.75, 9.4, and 17 GHz channels. Interestingly, the 3-minute QPP was also observed in the metric and decimetric radio frequencies (25-180, 245, 610 MHz) as repetitive type III bursts. Multiwavelength observations from the Solar Dynamics Observatory/Atmospheric Image Assembly, Hinode/SOT, and Solar TErrestrial RElations Observatory/SECCHI suggest a fan-spine topology at the eruption site, associated with the formation of a quasi-circular ribbon during the flare. A small filament was observed below the fan loops before the flare onset. The filament rose slowly and interacted with the ambient field. This behavior was followed by an untwisting motion of the filament. Two different structures of the filament showed an approximately 3-minute periodic alternate rotation in the clockwise and counterclockwise directions. The 3-minute QPP was found to highly correlate with 3-minute oscillations in a nearby sunspot. We suggest that the periodic reconnection (modulated either by a sunspot slow-mode wave or by an untwisting filament) at a magnetic null point most likely causes the repetitive particle acceleration, generating the QPP observed in HXR, microwave, and type III radio bursts.

  13. Partially Coherent Quantitative Phase Retrieval with Applications to Extreme Ultraviolet Lithography

    NASA Astrophysics Data System (ADS)

    Claus, Rene Andre

    This dissertation presents a new quantitative phase retrieval algorithm that fully models partially coherent imaging in microscopes. Unlike existing algorithms, our algorithm fully considers the pupil function and illumination by using the Weak Object Transfer Function (WOTF). Using an iterative approach, we extend the applicability of the WOTF beyond weakly scattering objects. This allows almost any measurement to be used during phase retrieval. As an example of how this feature can be used to invent practical new measurement schemes, we present the illumination switched pupil. This measurement uses a phase contrast objective and varied illumination to maximize the sensitivity of the microscope to both the phase and amplitude of the sample. Using only two images, the complex field can be recovered with high sensitivity at almost all spatial frequencies. A complete model of imaging in the microscope enables self-calibration of the measurements and improved phase retrieval. Since all important characteristics of the microscope can be incorporated, an optimization over critical parameters, such as the best focus position and image alignment, can be performed after the images have been captured. This allows errors in the calibration to be corrected after the measurements have been performed, improving the accuracy of the recovered field while simplifying the experiments. To verify and apply the algorithm experimentally, we have performed phase retrieval measurements of Extreme Ultraviolet (EUV) photomasks on the zone plate microscope, SHARP, at Lawrence Berkeley National Laboratory (LBNL). Phase retrieval has enabled the quantitative analysis of multilayer roughness and defects. Experiments, comparing the size of defects measured using phase retrieval to measurements performed by AFM, indicate that AFM consistently underestimates the effective height of the buried multilayer defects by 1 nm. Other measurements of defects, comparing the recovered field extracted from

  14. Observation of a Quasiperiodic Pulsation in Hard X-Ray, Radio, and Extreme-ultraviolet Wavelengths

    NASA Astrophysics Data System (ADS)

    Kumar, Pankaj; Nakariakov, Valery M.; Cho, Kyung-Suk

    2016-05-01

    We present a multiwavelength analysis of a quasiperiodic pulsation (QPP) observed in the hard X-ray (HXR), radio, and extreme-ultraviolet (EUV) channels during an M1.9 flare that occurred on 2011 September 23–24. The nonthermal HXR emission in 25–50 keV observed by RHESSI shows five distinct impulsive peaks of decaying amplitude with a period of about 3 minutes. A similar QPP was observed in the microwave emission recorded by the Nobeyama Radioheliograph and Polarimeter in the 2, 3.75, 9.4, and 17 GHz channels. Interestingly, the 3-minute QPP was also observed in the metric and decimetric radio frequencies (25–180, 245, 610 MHz) as repetitive type III bursts. Multiwavelength observations from the Solar Dynamics Observatory/Atmospheric Image Assembly, Hinode/SOT, and Solar TErrestrial RElations Observatory/SECCHI suggest a fan-spine topology at the eruption site, associated with the formation of a quasi-circular ribbon during the flare. A small filament was observed below the fan loops before the flare onset. The filament rose slowly and interacted with the ambient field. This behavior was followed by an untwisting motion of the filament. Two different structures of the filament showed an approximately 3-minute periodic alternate rotation in the clockwise and counterclockwise directions. The 3-minute QPP was found to highly correlate with 3-minute oscillations in a nearby sunspot. We suggest that the periodic reconnection (modulated either by a sunspot slow-mode wave or by an untwisting filament) at a magnetic null point most likely causes the repetitive particle acceleration, generating the QPP observed in HXR, microwave, and type III radio bursts.

  15. EUV source power and lifetime: the most critical issues for EUV lithography

    NASA Astrophysics Data System (ADS)

    Stamm, Uwe; Kleinschmidt, Juergen; Gaebel, Kai; Birner, Henry; Ahmad, Imtiaz; Bolshukhin, Denis; Brudermann, Jesko; Chinh, Tran Duc; Flohrer, Frank; Goetze, Sven; Hergenhan, Guido; Kloepfel, Diethard; Korobotchko, Vladimir; Mader, Bjorn; Mueller, Rainer; Ringling, Jens; Schriever, Guido; Ziener, Christian

    2004-05-01

    Semiconductor chip manufacturers are expecting to use extreme ultraviolet (EUV) lithography for high volume manufacturing of DRAMs and ICs starting by the end of this decade. Among all the technologies and modules which have to be developed EUV sources at 13.5 nm are considered to be the most critical issue. Specifically the required output power of 115 W at the entrance of the illuminator system in combination with the required lifetimes of source components and collector optics make the source technology critical for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 500 W average power at up to 10 kHz developed at XTREME technologies. The maximum conversion efficiency from laser power into EUV in-band power is 1.0 % into 2p solid angle. 2.0 W EUV radiation is generated at 13.5 nm in 2p sr solid angle. The small source volume of < 0.3 mm diameter will allow large collection angles of 5 sr. The intermediate focus power is estimated to 1 W. Collector mirror lifetime tests showed 5 million pulses lifetime without debris mitigation. With debris mitigation in place lifetimes of more than 1 billion pulses are estimated. For the next generation of higher power EUV LPP sources a laser driver has been tested at 1.3 kW average laser power. This will lead to 5 W EUV power in intermediate focus. The GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. Prototype commercial gas discharge sources with an EUV power of 35W in 2p sr were already delivered for integration into EUV microsteppers. These sources are equipped with a debris-filter which results in an optics lifetime

  16. Defect mitigation considerations for EUV photomasks

    NASA Astrophysics Data System (ADS)

    Garetto, Anthony; Capelli, Renzo; Blumrich, Frederik; Magnusson, Krister; Waiblinger, Markus; Scheruebl, Thomas; Peters, Jan Hendrik; Goldstein, Michael

    2014-10-01

    The introduction of extreme ultraviolet (EUV) lithography into manufacturing requires changes in all aspects of the infrastructure, including the photomask. EUV reflective masks consist of a sophisticated multilayer (ML) mirror, capping layer, absorber layer, and anti-reflective coating thereby dramatically increasing the complexity of the photomask. In addition to absorber type defects similar to those the industry was forced to contend with for deep ultraviolet lithography, the complexity of the mask leads to new classes of ML defects. Furthermore, these approaches are complicated not only by the mask itself but also by unique aspects associated with the exposure of the photomask by the EUV scanner. This paper focuses on the challenges for handling defects associated with inspection, review, and repair for EUV photomasks. Blank inspection and pattern shifting, two completely new steps within the mask manufacturing process that arise from these considerations, and their relationship to mask review and repair are discussed. The impact of shadowing effects on absorber defect repair height is taken into account. The effect of mask biasing and the chief ray angle rotation due to the scanner slit arc shape will be discussed along with the implications of obtaining die-to-die references for inspection and repair. The success criteria for compensational repair of ML defects will be reviewed.

  17. The Study of Solar Energetic Protons Associated with EUV Waves

    NASA Astrophysics Data System (ADS)

    Park, Jinhye; Innes, Davina; Bucik, Radoslav; Moon, Yong-Jae; Kahler, Stephen W.

    2014-06-01

    We studied the relationship between solar energetic protons (SEPs) and extreme ultraviolet (EUV) wave properties between 2010 August and 2013 May observed by STEREO, SOHO and SDO. We determined the onset times, peak times and peak fluxes of the SEPs in SOHO ERNE and STEREO LET proton channel (6 - 10 MeV). Full Sun heliographic images created by combining STB 195Å, SDO 193Å, and STA 195Å were used for the analysis of the EUV waves. EUV wave arrival times at the spacecraft connecting points and their speed on the low corona were determined by space-time plots. It is noted that there is a significant correlation between the EUV wave arrival times and SEP onset times (r=0.73) but no SEP peak times. SEP peak fluxes increase with EUV wave speed (r=0.69) and the power law spectral index become harder with the EUV wave speed. This suggests that energetic protons are strongly associated with EUV waves, which is considered as the signature of CME shock in the low corona.

  18. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOEpatents

    Ruffner, Judith Alison

    1999-01-01

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.

  19. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOEpatents

    Ruffner, J.A.

    1999-06-15

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet (DUV) and Extreme Ultra-Violet (EUV) wavelengths. The method results in a product with minimum feature sizes of less than 0.10 [micro]m for the shortest wavelength (13.4 nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R[sup 2] factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates. 15 figs.

  20. Thermal{endash}mechanical performance of extreme ultraviolet lithographic reticles

    SciTech Connect

    Gianoulakis, S.E.; Ray-Chaudhuri, A.K.

    1998-11-01

    Thermal deformation of reticles will likely become an important consideration for all advanced lithography techniques targeting 130 nm features and below. Such effects can contribute to image placement errors and blur. These issues necessitate the need to quantify the reticle distortion, induced by the absorption of illumination power, for candidate substrate and coating materials. To study the impact of various substrate and coating materials on reticle performance, detailed three-dimensional transient thermal and solid mechanical models have been developed and extensively applied to predict total placement errors, residual placement errors, and blur on an extreme ultraviolet lithography (EUVL) reticle during scanning. The thermal model includes a bidirectional scanning heat source representative of the illumination incident on the reticle. The heat loads on the reticle are characteristic of an EUVL engineering test stand with a wafer throughput of twenty 200 mm wafers per hour (assuming 80{percent} die coverage and 68{percent} exposure time). This article includes the results which describe the impact of (1) different substrate materials, (2) various degrees of contact conductance between the reticle and chuck, (3) pattern density and arrangement, and (4) temperature variations across the chuck. {copyright} {ital 1998 American Vacuum Society.}

  1. Extreme ultraviolet spectrometer for the Shenguang III laser facility.

    PubMed

    Xiong, Gang; Yang, Guohong; Zhang, Jiyan; Wei, Minxi; Zhao, Yang; Qing, Bo; Lv, Min; Yang, Zhenghua; Wang, Feng; Liu, Shenye; Cai, Houzhi; Liu, Jinyuan

    2015-06-10

    An extreme ultraviolet spectrometer has been developed for high-energy density physics experiments at the Shenguang-III (SG-III) laser facility. Alternative use of two different varied-line-spacing gratings covers a wavelength range of 10-260 Å. A newly developed x-ray framing camera with single wide strip line is designed to record time-gated spectra with ~70 ps temporal resolution and 20 lp/mm spatial resolution. The width of the strip line is up to 20 mm, enhancing the capability of the spatial resolving measurements. All components of the x-ray framing camera are roomed in an aluminum air box. The whole spectrometer is mounted on a diagnostic instrument manipulator at the SG-III laser facility for the first time. A new alignment method for the spectrometer based on the superimposition of two laser focal spots is developed. The approaches of the alignment including offline and online two steps are described. A carbon spectrum and an aluminum spectrum have been successfully recorded by the spectrometer using 2400 l/mm and 1200 l/mm gratings, respectively. The experimental spectral lines show that the spectral resolution of the spectrometer is about 0.2 Å and 1 Å for the 2400 l/mm and 1200 l/mm gratings, respectively. A theoretical calculation was carried out to estimate the maximum resolving power of the spectrometer.

  2. Frequency combs and precision spectroscopy in the extreme ultraviolet

    NASA Astrophysics Data System (ADS)

    Cingöz, Arman

    2012-06-01

    Development of the optical frequency comb has revolutionized optical metrology and precision spectroscopy due to its ability to provide a precise link between microwave and optical frequencies. A novel application that aims to extend the precision and accuracy obtained to the extreme ultraviolet (XUV) is the generation of XUV frequency combs via intracavity high harmonic generation (HHG). Recently, we have been able to generate > 200 μW average power per harmonic and demonstrate the comb structure of the high harmonics by resolving atomic argon and neon lines at 82 and 63 nm, respectively [1]. The argon transition linewidth of 10 MHz, limited by residual Doppler broadening, is unprecedented in this spectral region and places a stringent upper limit on the linewidth of individual comb teeth. To overcome this limitation, we have constructed two independent intracavity HHG sources to study the phase coherence directly via the heterodyne beats between them. With these developments, ultrahigh precision spectroscopy in the XUV is within grasp and has a wide range of applications that include tests of bound state quantum electrodynamics, development of nuclear clocks, and searches for variation of fundamental constants using the enhanced sensitivity of highly charged ions.[4pt] [1] Arman Cing"oz et al., Nature 482, 68 (2012).

  3. Extreme ultraviolet observations from the voyager 2 encounter with saturn.

    PubMed

    Sandel, B R; Shemansky, D E; Broadfoot, A L; Holberg, J B; Smith, G R; McConnell, J C; Strobel, D F; Atreya, S K; Donahue, T M; Moos, H W; Hunten, D M; Pomphrey, R B; Linick, S

    1982-01-29

    Combined analysis of helium (584 angstroms) airglow and the atmospheric occultations of the star delta Scorpii imply a vertical mixing parameter in Saturn's upper atmosphere of K (eddy diffusion coefficient) approximately 8 x 10(7) square centimeters per second, an order of magnitude more vigorous than mixing in Jupiter's upper atmosphere. Atmospheric H(2) band absorption of starlight yields a preliminary temperature of 400 K in the exosphere and a temperature near the homopause of approximately 200 K. The energy source for the mid-latitude H(2) band emission still remains a puzzle. Certain auroral emissions can be fully explained in terms of electron impact on H(2), and auroral morphology suggests a link between the aurora and the Saturn kilometric radiation. Absolute optical depths have been determined for the entire C ring andparts of the A and B rings. A new eccentric ringlet has been detected in the C ring. The extreme ultraviolet reflectance of the rings is fairly uniform at 3.5 to 5 percent. Collisions may control the distribution of H in Titan's H torus, which has a total vertical extent of approximately 14 Saturn radii normal to the orbit plane.

  4. Extreme-ultraviolet ultrafast ARPES at high repetition rates

    NASA Astrophysics Data System (ADS)

    Buss, Jan; Wang, He; Xu, Yiming; Stoll, Sebastian; Zeng, Lingkun; Ulonska, Stefan; Denlinger, Jonathan; Hussain, Zahid; Jozwiak, Chris; Lanzara, Alessandra; Kaindl, Robert

    Time- and angle-resolved photoemission spectroscopy (trARPES) represents a powerful approach to resolve the electronic structure and quasiparticle dynamics in complex materials, yet is often limited in either momentum space (incident photon energy), probe sensitivity (pulse repetition rate), or energy resolution. We demonstrate a novel table-top trARPES setup that combines a bright 50-kHz source of narrowband, extreme ultraviolet (XUV) pulses at 22.3 eV with UHV photoemission instrumentation to sensitively access dynamics for a large momentum space. The output of a high-power Ti:sapphire amplifier is split to provide the XUV probe and intense photoexcitation (up to mJ/cm2) . A vacuum beamline delivers spectral and flux characterization, differential pumping, as well as XUV beam steering and toroidal refocusing onto the sample with high incident flux of 3x1011 ph/s. Photoemission studies are carried out in a customized UHV chamber equipped with a hemispherical analyzer (R4000), six-axis sample cryostat, and side chambers for sample loading, storage and preparation. An ARPES energy resolution down to 70 meV with the direct XUV output is demonstrated. We will discuss initial applications of this setup including Fermi surface mapping and trARPES of complex materials.

  5. Extreme ultraviolet spectrometer for the Shenguang III laser facility.

    PubMed

    Xiong, Gang; Yang, Guohong; Zhang, Jiyan; Wei, Minxi; Zhao, Yang; Qing, Bo; Lv, Min; Yang, Zhenghua; Wang, Feng; Liu, Shenye; Cai, Houzhi; Liu, Jinyuan

    2015-06-10

    An extreme ultraviolet spectrometer has been developed for high-energy density physics experiments at the Shenguang-III (SG-III) laser facility. Alternative use of two different varied-line-spacing gratings covers a wavelength range of 10-260 Å. A newly developed x-ray framing camera with single wide strip line is designed to record time-gated spectra with ~70 ps temporal resolution and 20 lp/mm spatial resolution. The width of the strip line is up to 20 mm, enhancing the capability of the spatial resolving measurements. All components of the x-ray framing camera are roomed in an aluminum air box. The whole spectrometer is mounted on a diagnostic instrument manipulator at the SG-III laser facility for the first time. A new alignment method for the spectrometer based on the superimposition of two laser focal spots is developed. The approaches of the alignment including offline and online two steps are described. A carbon spectrum and an aluminum spectrum have been successfully recorded by the spectrometer using 2400 l/mm and 1200 l/mm gratings, respectively. The experimental spectral lines show that the spectral resolution of the spectrometer is about 0.2 Å and 1 Å for the 2400 l/mm and 1200 l/mm gratings, respectively. A theoretical calculation was carried out to estimate the maximum resolving power of the spectrometer. PMID:26192833

  6. Pattern inspection of etched multilayer extreme ultraviolet mask

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Hirano, Ryoichi; Amano, Tsuyoshi; Watanabe, Hidehiro

    2016-04-01

    Patterned mask inspection for an etched multilayer (ML) extreme ultraviolet mask was investigated. In order to optimize the mask structure from the standpoint of a pattern inspection the mask structure not only from the standpoint of a pattern inspection by using a projection electron microscope but also by using a projection electron microscope but also by considering the other fabrication processes using electron beam techniques such as critical dimension metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients of the candidate materials for the conductive layer, we evaluated the image contrast and the influence of the charging effect. In the cases of 40-pair ML, 16-nm-sized extrusion and intrusion defects were found to be detectable more than 10 sigma in half pitch 44, 40, and 32 nm line-and-space patterns. Reducing 40-pair ML to 20-pair ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16-nm-sized defects and etching residues remained detectable. The 16-nm-sized defects were also detected after the etched part was refilled with Si. A double-layer structure with 2.5-nm-thick B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.

  7. On the maximum conversion efficiency into the 13.5-nm extreme ultraviolet emission under a steady-state laser ablation of tin microspheres

    NASA Astrophysics Data System (ADS)

    Basko, M. M.

    2016-08-01

    Theoretical investigation has been performed on the conversion efficiency (CE) into the 13.5-nm extreme ultraviolet (EUV) radiation in a scheme where spherical microspheres of tin (Sn) are simultaneously irradiated by two laser pulses with substantially different wavelengths. The low-intensity short-wavelength pulse is used to control the rate of mass ablation and the size of the EUV source, while the high-intensity long-wavelength pulse provides efficient generation of the EUV light at λ=13.5 nm. The problem of full optimization for maximizing the CE is formulated and solved numerically by performing two-dimensional radiation-hydrodynamics simulations with the RALEF-2D code under the conditions of steady-state laser illumination. It is shown that, within the implemented theoretical model, steady-state CE values approaching 9% are feasible; in a transient peak, the maximum instantaneous CE of 11.5% was calculated for the optimized laser-target configuration. The physical factors, bringing down the fully optimized steady-state CE to about one half of the absolute theoretical maximum of CE≈20 % for the uniform static Sn plasma, are analyzed in detail.

  8. Photoionized plasmas induced in neon with extreme ultraviolet and soft X-ray pulses produced using low and high energy laser systems

    SciTech Connect

    Bartnik, A.; Wachulak, P.; Fok, T.; Węgrzyński, Ł.; Fiedorowicz, H.; Pisarczyk, T.; Chodukowski, T.; Kalinowska, Z.; Dudzak, R.; Dostal, J.; Krousky, E.; Skala, J.; Ullschmied, J.; Hrebicek, J.; Medrik, T.

    2015-04-15

    A comparative study of photoionized plasmas created by two soft X-ray and extreme ultraviolet (SXR/EUV) laser plasma sources with different parameters is presented. The two sources are based on double-stream Xe/He gas-puff targets irradiated with high (500 J/0.3 ns) and low energy (10 J/1 ns) laser pulses. In both cases, the SXR/EUV beam irradiated the gas stream, injected into a vacuum chamber synchronously with the radiation pulse. Irradiation of gases resulted in formation of photoionized plasmas emitting radiation in the SXR/EUV range. The measured Ne plasma radiation spectra are dominated by emission lines corresponding to radiative transitions in singly charged ions. A significant difference concerns origin of the lines: K-shell or L-shell emissions occur in case of the high and low energy irradiating system, respectively. In high energy system, the electron density measurements were also performed by laser interferometry, employing a femtosecond laser system. A maximum electron density for Ne plasma reached the value of 2·10{sup 18 }cm{sup −3}. For the low energy system, a detection limit was too high for the interferometric measurements, thus only an upper estimation for electron density could be made.

  9. High brightness extreme ultraviolet (at 13.5 nm) emission from time-of-flight controlled discharges with coaxial fuel injection

    NASA Astrophysics Data System (ADS)

    Hosokai, Tomonao; Yokoyama, Takuma; Zhidkov, Alexei; Sato, Hiroto; Horioka, Kazuhiko; Hotta, Eiki

    2008-09-01

    Extreme ultraviolet (EUV) emission from discharge produced plasma with the coaxial injection of fuel vapor (tin and lithium) produced by laser ablation is experimentally studied. Multiple plasma pinches preceding a strong and long recombination radiation of EUV are observed in the first half cycle of a sinusoidal discharge current. Due to the time-of-flight control type of the discharge, the shape of pinch radiation pulses is almost identical. With the coaxial injection of time-of-flight controlled discharges, the highest brightness of EUV emission (maximum extracted energy of 244.3 mJ/2π sr per pulse with the emitter size of ˜1×0.3 mm2 in full width at half maximum) is provided with efficiency exceeding 2% of deposited energy into the plasma (or 1% of dissipated energy in the discharge) due to a much better matching with the optimal plasma parameters in the recombination regime and a decrease in the off-duty factor. Stability of emitting plasma of the repetitive pinches is essentially improved with use of a second laser pulse.

  10. Spectral observations of the extreme ultraviolet astronomical background radiation

    NASA Technical Reports Server (NTRS)

    Labov, S.; Bowyer, S.

    1988-01-01

    Observations in the FUV and soft X-ray bands suggest that the ISM contains several components of high-temperature gas (100,000-1 million K). If large volumes of local interstellar space are filled with this hot plasma, emission lines will be produced in the EUV. Diffuse EUV radiation, however, has only been detected with photometric instruments; no spectral measurements exist below 520 A. A unique grazing-incidence spectrometer to study the diffuse emission between 80 and 650 A with resolution 10-30 A was successfully flown on a sounding rocket in April 1986, and a preliminary analysis reveals several features. In addition to the expected interplanetary He I 584 A emission and the geocoronal He II 304 A emission, other features appear which may orginate in the hot ionized interstellar gas.

  11. Polarimetry of extreme ultraviolet lines in solar astronomy

    NASA Technical Reports Server (NTRS)

    Fineschi, Silvano; Hoover, Richard B.; Fontenla, Juan M.; Walker, Arthur B. C., Jr.

    1991-01-01

    Ways are suggested in which recent advancements in the fabrication of ultrasmooth, low scatter flow-polished mirror substrates and high-quality multilayer and interference film coatings can be used to create novel optical instruments for observing linear-polarization effects in the outer solar atmosphere. Attention is given to the observational parameters of all-reflective FUV/EUV imaging polarimeters; such a coronagraph/polarimeter, operating at Ly-alpha, could yield the first measurements of coronal vector magnetic fields.

  12. Polycarbonate based nonchemically amplified photoresists for extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Blakey, Idriss; Yu, Anguang; Blinco, James; Jack, Kevin S.; Liu, Heping; Leeson, Michael; Yueh, Wang; Younkin, Todd; Whittaker, Andrew K.

    2010-04-01

    Some initial EUVL patterning results for polycarbonate based non-chemically amplified resists are presented. Without full optimization the developer a resolution of 60 nm line spaces could be obtained. With slight overexposure (1.4 × E0) 43.5 nm lines at a half pitch of 50 nm could be printed. At 2x E0 a 28.6 nm lines at a half pitch of 50 nm could be obtained with a LER that was just above expected for mask roughness. Upon being irradiated with EUV photons, these polymers undergo chain scission with the loss of carbon dioxide and carbon monoxide. The remaining photoproducts appear to be non-volatile under standard EUV irradiation conditions, but do exhibit increased solubility in developer compared to the unirradiated polymer. The sensitivity of the polymers to EUV light is related to their oxygen content and ways to increase the sensitivity of the polymers to 10 mJ cm-2 is discussed.

  13. Multilayer Phase-Only Diffraction Gratings: Fabrication andApplication to EUV Optics

    SciTech Connect

    Salmassi, Farhad; Gullikson, Eric M.; Anderson, Erik H.; Naulleau, Patrick P.

    2007-05-01

    The use of phase-only diffractive devices has long played an important role in advanced optical systems in varying fields. Such devices include gratings, diffractive and holographic optical elements, diffractive lenses, and phase-shift masks for advanced lithography. Extending such devices to the increasingly important regime of extreme ultraviolet (EUV) wavelengths, however, is not trivial. Here, we present an effective fabrication and etch process enabling high-resolution patterning of Mo/Si multilayers for use in EUV phase devices, providing another method for fabrication of high numerical aperture diffractive devices or high-resolution EUV phase shift masks.

  14. Detection of EUV emission from the low activity dwarf HD 4628: Evidence for a cool corona

    NASA Technical Reports Server (NTRS)

    Mathioudakis, M.; Drake, J. J.; Vedder, P. W.; Schmitt, J. H. M. M.; Bowyer, S

    1994-01-01

    We present observations of low activity late-type stars obtained with the Extreme Ultraviolet Explorer (EUVE). These stars are the slowest rotators, and acoustic heating may dominate their outer atmospheric heating process. We report detection of EUV emission from the low acitivity K dwarf HD 4628 during the EUVE Deep Survey in the Lexan/boran band. This detection, in conjunction with the non-detection of this object in the ROSAT Position Sensitive Proportional Counter (PSPC) all-sky survey, suggests the existence of a cool corona with a characteristic temperature of less than 10(exp 6) K. The flux and spectral signature are consistent with current theories of acoustic heating.

  15. The Solar Chromosphere/Corona Interface. I. Far-Ultraviolet to Extreme-Ultraviolet Observations and Modeling of Unresolved Coronal Funnels

    NASA Technical Reports Server (NTRS)

    Martinez-Galarce, Dennis S.; Walker, Arthur C., III; Barbee, Troy W., II; Hoover, Richard B.

    2003-01-01

    A coronal funnel model, developed by D. Rabin, was tested against a calibrated spectroheliogram recorded in the 170-1 75 A bandpass. This image was recorded on board a sounding-rocket experiment flown on 1994 November 3, called the Multi-Spectral Solar Telescope Array II (MSSTA II). MSSTA, a joint project of Stanford University, the NASA Marshall Space Flight Center, and the Lawrence Livermore National Laboratory' is an observing platform composed of a set of normal-incidence, multilayer-coated optics designed to obtain narrow-bandpass, high-resolution images (1 sec.- 3 sec.) at selected far-ultraviolet (FUV), extreme-ultraviolet (EUV), and soft X-ray wavelengths (44-1550 A). Using full disk images centered at 1550 A (C IV) and 173 A (Fe IX/X), the funnel model, which is based on coronal back-heating, was tested against the data incorporating observed constraints on global coverage and measured flux. Found was a class of funnel models that could account for the quiescent, globally diffuse and unresolved emission seen in the 171-175 A bandpass, where the funnels are assumed to be rooted in the C IV supergranular network. These models, when incorporated with the CHIANTI spectral code, suggest that this emission is mostly of upper transition region origin and primarily composed of Fe IX plasma. The funnels are found to have constrictions, Gamma approx. 6-20, which is in good agreement with the observations. Further, the fitted models simultaneously satisfy global areal constraints seen in both images; namely,that a global network of funnels must cover approx. 700 - 95% of the total solar surface area seen in the 171-175 A image, and a 5% of the disk area seen in the 1550 A bandpass. These findings support the configuration of the EUV magnetic network as suggested by Reeves et al. and put forth in more detail by Gabriel. Furthermore, the models are in good agreement with differential emission measure estimates made of the transition region by J. C. Raymond & J. G

  16. High efficiency structured EUV multilayer mirror for spectral filtering of long wavelengths.

    PubMed

    Huang, Qiushi; de Boer, Meint; Barreaux, Jonathan; van der Meer, Robert; Louis, Eric; Bijkerk, Fred

    2014-08-11

    High spectral purity at longer wavelength side is demanded in many extreme ultraviolet (EUV) and soft X-ray (together also referred to as XUV) optical systems. It is usually obtained at the expense of a high loss of XUV efficiency. We proposed and developed a new method based on a periodic, tapered structure integrated with an EUV multilayer. The longer wavelength radiation is scattered/diffracted away by the tapered multilayer structure while the EUV light is reflected. The first proof-of-principle showed a broadband suppression from λ = 100-400 nm with an average factor of 14. Moreover, a high EUV reflectance of 64.7% was achieved, which corresponds to 94% of the efficiency of a regular EUV multilayer mirror. PMID:25321021

  17. 100W EUV light-source key component technology update for HVM

    NASA Astrophysics Data System (ADS)

    Hori, Tsukasa; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Shiraishi, Yutaka; Abe, Tamotsu; Okamoto, Takeshi; Kodama, Takeshi; Nakarai, Hiroaki; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi; Mizoguchi, Hakaru

    2016-03-01

    Gigaphoton Inc. develops a high-power laser produced plasma extreme ultraviolet (LPP EUV) light source for high volume manufacturing which enables sub-10nm critical layer patterning for semiconductor device fabrication. A technology update of key components of a 100 W LPP-EUV light source is given in this paper. The key components efficiently produce a stable plasma and evacuate the tin debris from the EUV vessel with a magnetic debris mitigation system. The chosen technology guarantees therefore a high-power and long-life EUV light source system. Each component is described with updated data. The latest system performance results are also presented. They were obtained from our proto LPP-EUV light systems which support 100 W output power.

  18. Spectral catalogue of the intermediate ionization states of iron in the extreme ultraviolet

    SciTech Connect

    Beiersdorfer, P.; Utter, S.B.; Brown, G.V.

    1998-05-13

    Using precisely controlled laboratory conditions we have begun to establish a spectral catalogue of the intermediate ionization states of iron, Fe IX - Fe XXIV, in the extreme ultraviolet. The measurements are being performed in support of the development of reliable modeling codes for the analysis of data from the Extreme Ultraviolet Explorer and future space astrophysics missions sensitive to extreme ultraviolet radiation. They aim to resolve the controversies surrounding the short-wavelength spectra of stellar coronae. Preliminary measurements showing the wealth of iron lines in the 50-120 {Angstrom} region are presented.

  19. Collecting EUV mask images through focus by wavelength tuning

    SciTech Connect

    Goldberg, Kenneth A.; Mochi, Iacopo; Huh, Sungmin

    2009-02-23

    Using an extreme-ultraviolet (EUV) microscope to produce high-quality images of EUV reticles, we have developed a new wavelength tuning method to acquire through-focus data series with a higher level of stability and repeatability than was previously possible. We utilize the chromatic focal-length dependence of a diffractive Fresnel zoneplate objective lens, and while holding the mask sample mechanically still, we tune the wavelength through a narrow range, in small steps. In this paper, we demonstrate the method and discuss the relative advantages that this data collection technique affords.

  20. Fabrication of Thiol-Ene "Clickable" Copolymer-Brush Nanostructures on Polymeric Substrates via Extreme Ultraviolet Interference Lithography.

    PubMed

    Dübner, Matthias; Gevrek, Tugce N; Sanyal, Amitav; Spencer, Nicholas D; Padeste, Celestino

    2015-06-01

    We demonstrate a new approach to grafting thiol-reactive nanopatterned copolymer-brush structures on polymeric substrates by means of extreme ultraviolet (EUV) interference lithography. The copolymer brushes were designed to contain maleimide functional groups as thiol-reactive centers. Fluoropolymer films were exposed to EUV radiation at the X-ray interference lithography beamline (XIL-II) at the Swiss Light Source, in order to create radical patterns on their surfaces. The radicals served as initiators for the copolymerization of thiol-ene "clickable" brushes, composed of a furan-protected maleimide monomer (FuMaMA) and different methacrylates, namely, methyl methacrylate (MMA), ethylene glycol methyl ether methacrylate (EGMA), or poly(ethylene glycol) methyl ether methacrylate (PEGMA). Copolymerization with ethylene-glycol-containing monomers provides antibiofouling properties to these surfaces. The number of reactive centers on the grafted brush structures can be tailored by varying the monomer ratios in the feed. Grafted copolymers were characterized by using attenuated total reflection infrared (ATR-IR) spectroscopy. The reactive maleimide methacrylate (MaMA) units were utilized to conjugate thiol-containing moieties using the nucleophilic Michael-addition reaction, which proceeds at room temperature without the need for any metal-based catalyst. Using this approach, a variety of functionalities was introduced to yield polyelectrolytes, as well as fluorescent and light-responsive polymer-brush structures. Functionalization of the brush structures was demonstrated via ATR-IR and UV-vis spectroscopy and fluorescence microscopy, and was also indicated by a color switch. Furthermore, grafted surfaces were generated via plasma activation, showing a strongly increased wettability for polyelectrolytes and a reversible switch in static water contact angle (CA) of up to 18° for P(EGMA-co-MaMA-SP) brushes, upon exposure to alternating visible and UV-light irradiation

  1. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    NASA Astrophysics Data System (ADS)

    Chen, Hong; Wang, Xinbing; Duan, Lian; Lan, Hui; Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-05-01

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer-Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  2. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    SciTech Connect

    Chen, Hong; Duan, Lian; Lan, Hui; Wang, Xinbing Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-05-21

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  3. Time-resolved study of the extreme-ultraviolet emission and plasma dynamics of a sub-Joule, fast capillary discharge

    NASA Astrophysics Data System (ADS)

    Valenzuela, J. C.; Wyndham, E. S.; Favre, M.

    2015-08-01

    In this work, we discuss experimental observations on the dynamics of a fast, low energy capillary discharge when operated in argon and its properties as an intense source of extreme-ultraviolet (EUV) radiation. The discharge pre-ionization and self-triggering were accomplished by the use of the hollow cathode effect. This allowed a compact size and low inductance discharge with multi-kA current level and a quarter-period of ˜10 ns at sub-Joule energy level. We used the novel moiré and schlieren diagnostics with a 12 ps laser to obtain the time evolution of the line electron density and to study the plasma dynamics. EUV spectroscopy and filtered diodes were also implemented to estimate the plasma temperature and density throughout the evolution of the discharge. EUV source size was measured by using a filtered slit-wire camera. We observed that EUV emission starts from a compressed plasma on axis during the second quarter-period of the current and continues until the fifth quarter-period. Ionization levels from Ar VII to X were observed. By comparing the EUV emission spectra with synthetic spectra, we found that at the onset of emission (˜7 ns), the plasma is well fitted by a single Maxwellian electron distribution function with Te ˜ 12 eV and ne ˜ 1017 cm-3. Close to peak emission (˜13 ns), plasma temperature and density increase to ˜20 eV and ne ˜ 1018 cm-3, respectively. However, in order to successfully match the experimental data, a two component electron distribution function was necessary. Later in time, a smaller fraction in the high energy component and higher temperature suggests homogenization of the plasma. The moiré and schlieren diagnostics showed multiple radial compression-waves merging on axis throughout the discharge; they are an important heating mechanism that leads to a period of severe turbulence at peak EUV emission. It was also observed that emission ceases when the axial maximum of the electron density collapses.

  4. Time-resolved study of the extreme-ultraviolet emission and plasma dynamics of a sub-Joule, fast capillary discharge

    SciTech Connect

    Valenzuela, J. C.; Wyndham, E. S.; Favre, M.

    2015-08-15

    In this work, we discuss experimental observations on the dynamics of a fast, low energy capillary discharge when operated in argon and its properties as an intense source of extreme-ultraviolet (EUV) radiation. The discharge pre-ionization and self-triggering were accomplished by the use of the hollow cathode effect. This allowed a compact size and low inductance discharge with multi-kA current level and a quarter-period of ∼10 ns at sub-Joule energy level. We used the novel moiré and schlieren diagnostics with a 12 ps laser to obtain the time evolution of the line electron density and to study the plasma dynamics. EUV spectroscopy and filtered diodes were also implemented to estimate the plasma temperature and density throughout the evolution of the discharge. EUV source size was measured by using a filtered slit-wire camera. We observed that EUV emission starts from a compressed plasma on axis during the second quarter-period of the current and continues until the fifth quarter-period. Ionization levels from Ar VII to X were observed. By comparing the EUV emission spectra with synthetic spectra, we found that at the onset of emission (∼7 ns), the plasma is well fitted by a single Maxwellian electron distribution function with T{sub e} ∼ 12 eV and n{sub e} ∼ 10{sup 17 }cm{sup −3}. Close to peak emission (∼13 ns), plasma temperature and density increase to ∼20 eV and n{sub e} ∼ 10{sup 18 }cm{sup −3}, respectively. However, in order to successfully match the experimental data, a two component electron distribution function was necessary. Later in time, a smaller fraction in the high energy component and higher temperature suggests homogenization of the plasma. The moiré and schlieren diagnostics showed multiple radial compression-waves merging on axis throughout the discharge; they are an important heating mechanism that leads to a period of severe turbulence at peak EUV emission. It was also observed that emission

  5. ULTRAVIOLET AND EXTREME-ULTRAVIOLET EMISSIONS AT THE FLARE FOOTPOINTS OBSERVED BY ATMOSPHERE IMAGING ASSEMBLY

    SciTech Connect

    Qiu Jiong; Longcope, Dana W.; Liu Wenjuan; Sturrock, Zoe; Klimchuk, James A.

    2013-09-01

    A solar flare is composed of impulsive energy release events by magnetic reconnection, which forms and heats flare loops. Recent studies have revealed a two-phase evolution pattern of UV 1600 A emission at the feet of these loops: a rapid pulse lasting for a few seconds to a few minutes, followed by a gradual decay on timescales of a few tens of minutes. Multiple band EUV observations by the Atmosphere Imaging Assembly further reveal very similar signatures. These two phases represent different but related signatures of an impulsive energy release in the corona. The rapid pulse is an immediate response of the lower atmosphere to an intense thermal conduction flux resulting from the sudden heating of the corona to high temperatures (we rule out energetic particles due to a lack of significant hard X-ray emission). The gradual phase is associated with the cooling of hot plasma that has been evaporated into the corona. The observed footpoint emission is again powered by thermal conduction (and enthalpy), but now during a period when approximate steady-state conditions are established in the loop. UV and EUV light curves of individual pixels may therefore be separated into contributions from two distinct physical mechanisms to shed light on the nature of energy transport in a flare. We demonstrate this technique using coordinated, spatially resolved observations of UV and EUV emissions from the footpoints of a C3.2 thermal flare.

  6. Ultraviolet and Extreme-Ultraviolet Emissions at the Flare Footpoints Observed by Atmosphere Imaging Assembly

    NASA Technical Reports Server (NTRS)

    Qiu, Jiong; Sturrock, Zoe; Longcope, Dana W.; Klimchuk, James A.; Liu, Wen-Juan

    2013-01-01

    A solar flare is composed of impulsive energy release events by magnetic reconnection, which forms and heats flare loops. Recent studies have revealed a two-phase evolution pattern of UV 1600 A emission at the feet of these loops: a rapid pulse lasting for a few seconds to a few minutes, followed by a gradual decay on timescales of a few tens of minutes. Multiple band EUV observations by the Atmosphere Imaging Assembly further reveal very similar signatures. These two phases represent different but related signatures of an impulsive energy release in the corona. The rapid pulse is an immediate response of the lower atmosphere to an intense thermal conduction flux resulting from the sudden heating of the corona to high temperatures (we rule out energetic particles due to a lack of significant hard X-ray emission). The gradual phase is associated with the cooling of hot plasma that has been evaporated into the corona. The observed footpoint emission is again powered by thermal conduction (and enthalpy), but now during a period when approximate steady-state conditions are established in the loop. UV and EUV light curves of individual pixels may therefore be separated into contributions from two distinct physical mechanisms to shed light on the nature of energy transport in a flare.We demonstrate this technique using coordinated, spatially resolved observations of UV and EUV emissions from the footpoints of a C3.2 thermal flare.

  7. Calibration of photon counting imaging microchannel plate detectors for EUV astronomy

    NASA Technical Reports Server (NTRS)

    Siegmund, O. H. W.; Vallerga, J.; Jelinsky, P.

    1986-01-01

    The calibration of photon counting imaging detectors for satellite based EUV astronomy is a complex process designed to ensure the validity of the data received 'in orbit'. The methods developed to accomplish calibration of microchannel plate detectors for the Extreme Ultraviolet Explorer are described and illustrated. The characterization of these detectors can be subdivided into three categories: stabilization, performance tests, and environmental tests.

  8. The EUVE Electronic Proposal Review (EPR) System

    NASA Astrophysics Data System (ADS)

    Cullison, J.; Boyd, W.; Stroozas, B. A.; Malina, R. F.

    1999-12-01

    The Electronic Proposal Review (EPR) system created by the University of California, Berkeley has been used for the last three Extreme Ultraviolet Explorer (EUVE) observing cycles. This process, including the EUVE Electronic Proposal Submission (EPS) system and semi-automated processes for the proposal review, has proven to be an effective and preferred means of serving our users' needs. This paper discusses the various elements of EUVE's EPR system as well as the benefits and insights gained from its creation and usage. Via creating and using EPR, the EUVE staff has optimized the administration of the proposal review process and has gained insights relevant to the program's management and application design. EUVE staff has benefitted from EPR over the past three cycles, as the applications have been used to process 142 different proposals. The system has not only helped to cut Time Allocation Committee spending in half, standardize Guest Observer proposal submission (i.e. eliminate proposer errors), reduce mailing, minimize clerical work, and streamline committee reporting, it has also proved to be a preferable means of accessing proposals for science planners and data processors who occasionally need an instant means of double checking proposal specifications. Though participants are generally satisfied with the process, the EUVE management staff continues to work, for example, to find ways to insure that the electronic selection continues to involve meaningful avenues of communication where person-to-person contact is not possible or neceessary. Design of EPR is an evolutionary process with potential future improvements including increased automation for the post-submission processes and greater application portability. This work was funded under NASA Cooperative Agreement NCC5-138.

  9. Extreme-ultraviolet observations of global coronal wave rotation

    SciTech Connect

    Attrill, G. D. R.; Long, D. M.; Green, L. M.; Harra, L. K.; Van Driel-Gesztelyi, L.

    2014-11-20

    We present evidence of global coronal wave rotation in EUV data from SOHO/EIT, STEREO/EUVI, and SDO/AIA. The sense of rotation is found to be consistent with the helicity of the source region (clockwise for positive helicity, anticlockwise for negative helicity), with the source regions hosting sigmoidal structures. We also study two coronal wave events observed by SDO/AIA where no clear rotation (or sigmoid) is observed. The selected events show supporting evidence that they all originate with flux rope eruptions. We make comparisons across this set of observations (both with and without clear sigmoidal structures). On examining the magnetic configuration of the source regions, we find that the nonrotation events possess a quadrupolar magnetic configuration. The coronal waves that do show a rotation originate from bipolar source regions.

  10. A search for EUV emission from cataclysmic variables

    SciTech Connect

    Polidan, R.S.; Mauche, C.W.

    1989-01-01

    Voyager far- and extreme-ultraviolet (500--1200 /angstrom/) spectrophotometric observations of five cataclysmic variables (the dwarf novae SS Cyg and VW Hyi and the novalike variables V3885 Sgr, RW Sex, and IX Vel) are combined with neutral hydrogen column densities derived from the curve-of-growth analysis of interstellar absorption lines in high-resolution IUE spectra to place upper limits on the emitted flux in the 600--700 /angstrom/ EUV band. No EUV emission was observed in any of the five cataclysmic variables. Relatively high neutral hydrogen column densities (> 10/sup 19/ cm/sup /minus/2/) in SS Cyg, V3885 Sgr, RW Sex, and IX Vel preclude any discussion of their intrinsic EUV emission. For VW Hyi, the low neutral hydrogen column, and excellent Voyager data place severe upper limits on the intrinsic EUV flux of this cataclysmic variable. The derived EUV limits for VW Hyi are compared to predictions from various models and Voyager observations of EUV emission from nearby hot white dwarfs. 8 refs., 2 figs., 2 tabs.

  11. Candidate plasma-facing materials for EUV lithography source components

    NASA Astrophysics Data System (ADS)

    Hassanein, Ahmed; Burtseva, Tatiana; Brooks, Jeff N.; Konkashbaev, Isak K.; Rice, Bryan J.

    2003-06-01

    Material selection and lifetime issues for extreme ultraviolet (EUV) lithography are of critical importance to the success of this technology for commercial applications. This paper reviews current trends in production and use of plasma-facing electrodes, insulators, and wall materials for EUV type sources. Ideal candidate materials should be able to: withstand high thermal shock from the short pulsed plasma; withstand high thermal loads without structural failure; reduce debris generation during discharge; and be machined accurately. We reviewed the literature on current and proposed fusion plasma-facing materials as well as current experience with plasma gun and other simulation devices. Both fusion and EUV source materials involve issues of surface erosion by particle sputtering and heat-induced evaporation/melting. These materials are either bare structural materials or surface coatings. EUV materials can be divided into four categories: wall, electrode, optical, and insulator materials. For electric discharge sources, all four types are required, whereas laser-produced plasma EUV sources do not require electrode and insulator materials. Several types of candidate alloy and other materials and methods of manufacture are recommended for each component of EUV lithography light sources.

  12. EUV induced low temperature SF6-based plasma

    NASA Astrophysics Data System (ADS)

    Bartnik, A.; Wachulak, P.; Fiedorowicz, H.; Skrzeczanowski, W.; Jarocki, R.; Fok, T.; Węgrzyński, Ł.

    2016-03-01

    In this work spectral investigations of low temperature F-rich photoionized plasmas were performed. The photoionized plasmas were created by irradiation of SF6 gas with intense EUV (extreme ultraviolet) radiation pulses. Two laser plasma EUV sources of different parameters used in the experiments were based on 0.8 J /4ns and 10 J/ 10 ns Nd:YAG lasers respectively. Both sources operated at 10 Hz repetition rate. The EUV radiation was focused using a dedicated reflective collector onto the gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of the SF6 gas resulted in dissociative ionization of the molecules, leading to creation of SFn+ ions and fluorine atoms. Further photo- or electron impact ionization and excitation processes allow for formation of photoionized plasmas emitting radiation in the wide spectral range. Emission spectra were measured in the EUV and optical ranges. The EUV spectra contained multiple spectral lines, originating from F II, F III and S II ions. The UV/VIS spectra were composed of spectral lines corresponding to radiative transitions in F II, F I and S II species. A computer simulation of the F II spectrum was performed using a collisional-radiative PrismSPECT code. Parameters of the photoionized plasmas were estimated by fitting the spectrum obtained from the simulations to the experimental one. Apart from that, the electron temperature was estimated employing Boltzmann plots based on the UV/VIS spectrum.

  13. Extreme ultraviolet lithography and three dimensional integrated circuit—A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay

    2014-03-01

    Extreme ultraviolet lithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology. Commercial step-and-scan tools for preproduction are installed now with full field capability; however, EUV source power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 200 W in-band power at IF, current tools can supply only approximately 40-55 W. EUVL resist has improved significantly in the last few years, with 13 nm line/space half-pitch resolution being produced with approximately 3-4 nm line width roughness (LWR), but LWR needs 2× improvement. Creating a defect-free EUVL mask is currently an obstacle. Actual adoption of EUVL for 22 nm and beyond technology nodes will depend on the extension of current optical lithography (193 nm immersion lithography, combined with multiple patterning techniques), as well as other methods such as 3D IC. Lithography has been the enabler for IC performance improvement by increasing device density, clock rate, and transistor rate. However, after the turn of the century, IC scaling resulted in short-channel effect, which decreases power efficiency dramatically, so clock frequency almost stopped increasing. Although further IC scaling by lithography reduces gate delay, interconnect delay and memory wall are dominant in determining the IC performance. 3D IC technology is a critical technology today because it offers a reasonable route to further improve IC performance. It increases device density, reduces the interconnect delay, and breaks memory wall with the application of 3D stacking using through silicon via. 3D IC also makes one chip package have more functional diversification than those enhanced only by shrinking the size of the features

  14. Multilayer Optics for an Extreme Ultraviolet Lithography Tool with 70 nm Resolution

    SciTech Connect

    Soufli, R; Spiller, E; Schmidt, M A; Davidson, J C; Brabner, R F; Bullikson, E M; Kaufmann, B B; Baker, S L; Chapman, H N; Hudyma, R M; Taylor, J S; Walton, C C; Montcalm, C; Folta, J A

    2001-05-04

    One of the most critical tasks in the development of extreme ultraviolet lithography (EUVL) is the accurate deposition of reflective multilayer coatings for the mirrors comprising the EUVL tool. The second set (Set 2) of four imaging optics for an alpha-class EUVL system has been coated successfully. All four mirrors (M1, M2, M3, M4) were Mo/Si-coated during a single deposition run with a production-scale DC-magnetron sputtering system. Ideally, the multilayer coatings should not degrade the residual wavefront error of the imaging system design. For the present EUVL camera, this requirement is equivalent to depositing multilayer coatings that would add a figure error of less than 0.11 nm rms. In addition, all mirrors should be matched in centroid wavelength, in order to insure maximum throughput of the EUVL tool. In order to meet these constraints, the multilayer deposition process needs to be controlled to atomic precision. EUV measurements of the coated mirrors determined that the added figure errors due to the multilayer coatings are 0.032 nm rms (M1), 0.037 nm rms (M2), 0.040 nm rms (M3) and 0.015 nm rms (M4), well within the aforementioned requirement of 0.11 nm rms. The average wavelength among the four projection mirrors is 13.352 nm, with an optic-to-optic matching of 1{sigma}=0.010 nm. This outstanding level of wavelength matching produces 99.3% of the throughput of an ideally matched four-mirror system. Peak reflectances are 63.8% (M1), 65.2% (M2), 63.8% (M3) and 66.7% (M4). The variation in reflectance values between the four optics is consistent with their high frequency substrate roughness. It is predicted that the multilayer coatings will not introduce any aberrations in the lithographic system performance, for both static and scanned images of 70 nm-dense features.

  15. The design of an echelle spectrometer for diffuse extreme ultraviolet/far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Martin, Christopher

    1986-01-01

    The novel, relatively high-resolution nebular spectrometer design presented incorporates a mechanical precollimator with an objective echelle grating that proceeds to a cross-dispensing Wadsworth configuration; the minimum feasible number of reflections is employed in order to maximize EUV sensitivity. The configuration, which is noted to be capable of yielding a comparatively large field of view for optimal diffuse emission sensitivity, is compact and employs conventionally fabricated optical components and available microchannel plate detectors. The sensitivities obtainable approach the limit stipulated by Liouville's theorem.

  16. Future EUV Observations of the Interstellar Medium

    NASA Astrophysics Data System (ADS)

    Kowalski, M. P.; Wood, K. S.; Barstow, M. A.; Cruddace, R. G.

    2009-08-01

    Interstellar helium can be observed directly only in the Extreme Ultraviolet (EUV) waveband. However, high sensitivity and spectral resolution are required to disentangle the He II Lyman series lines from the many heavier element lines found in the continuum spectra of many white dwarfs. In 2001 we observed the white dwarf G191-B2 with the world's first high resolution EUV astrophysical spectrometer (J-PEX), flown on a NASA sounding rocket. We were able to detect interstellar He II lines against the background of other species. Our experience underlines the promise of He II absorption line measurements in mapping structure in the Local Interstellar Medium (LISM) such as the Local Bubble and the need for many more high-resolution EUV observations. J-PEX will fly again in 2008 to observe the binary white dwarf Feige 24, but the limited observation time with sounding rockets makes them unattractive for future detailed studies. Here we describe the scientific case for high-resolution EUV spectroscopy, summarize the technology that makes such measurements practical, and present a concept for a ~3-month orbital mission, in which the J-PEX payload is modified for flight as a small-satellite. Such a mission might produce sensitive high-resolution spectra for ~30 white dwarfs, many of which could contribute to the understanding of structure in the LISM.

  17. SOHO/CELIAS Solar EUV Monitor (SEM) Absolute Solar EUV Irradiance Measurements Spanning Two Solar Minima (Invited)

    NASA Astrophysics Data System (ADS)

    Wieman, S. R.; Didkovsky, L. V.; Judge, D.

    2010-12-01

    The SOHO/CELIAS Solar EUV Monitor (SEM) has measured absolute EUV solar irradiance nearly continuously over a 15 year period that includes both the cycle 22/23 (1996) and cycle 23/24 (2008) solar minima. These measurements indicate that irradiance in the 26-34 nm spectral range, including the dominant He II 30.4 nm spectral line, was about 15% ± 6% lower during the more recent minimum compared to the previous minimum. The SEM data have been verified against measurements from seven sounding rocket calibration underflights that included a NIST calibrated SEM clone instrument as well as a Rare Gas Ionization Cell (RGIC) absolute extreme ultraviolet (EUV) detector. Additionally, the SEM measurements are in good agreement with measurements from the EUV Spectrophotomer (ESP) part of the EUV Variability Experiment (EVE) on SDO. ESP measurements from the EVE sounding rocket flight (2008) confirmed the very low solar EUV irradiance observed during the 23/24 minimum. A comparison of SEM and ESP data in the 30.4 nm spectral windows is presented.

  18. Plasma-based EUV light source

    DOEpatents

    Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

    2010-11-02

    Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

  19. Contamination Effects on EUV Optics

    NASA Technical Reports Server (NTRS)

    Tveekrem, J.

    1999-01-01

    During ground-based assembly and upon exposure to the space environment, optical surfaces accumulate both particles and molecular condensibles, inevitably resulting in degradation of optical instrument performance. Currently, this performance degradation (and the resulting end-of-life instrument performance) cannot be predicted with sufficient accuracy using existing software tools. Optical design codes exist to calculate instrument performance, but these codes generally assume uncontaminated optical surfaces. Contamination models exist which predict approximate end-of-life contamination levels, but the optical effects of these contamination levels can not be quantified without detailed information about the optical constants and scattering properties of the contaminant. The problem is particularly pronounced in the extreme ultraviolet (EUV, 300-1,200 A) and far (FUV, 1,200-2,000 A) regimes due to a lack of data and a lack of knowledge of the detailed physical and chemical processes involved. Yet it is in precisely these wavelength regimes that accurate predictions are most important, because EUV/FUV instruments are extremely sensitive to contamination.

  20. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Hatakeyama, Masahiro; Terao, Kenji; Watanabe, Hidehiro

    2016-04-01

    Extreme ultraviolet lithography (EUVL) patterned mask defect detection is a major issue that must be addressed to realize EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics for integration into a mask inspection system, and the resulting PEM system performs well in half-pitch (hp) 16-nm-node EUVL patterned mask inspection applications. A learning system has been used in this PEM patterned mask inspection tool. The PEM identifies defects using the "defectivity" parameter that is derived from the acquired image characteristics. The learning system has been developed to reduce the labor and the costs associated with adjustment of the PEM's detection capabilities to cope with newly defined mask defects. The concepts behind this learning system and the parameter optimization flow are presented here. The learning system for the PEM is based on a library of registered defects. The learning system then optimizes the detection capability by reconciling previously registered defects with newly registered defects. Functional verification of the learning system is also described, and the system's detection capability is demonstrated by applying it to the inspection of hp 11-nm EUV masks. We can thus provide a user-friendly mask inspection system with reduced cost of ownership.

  1. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

    2016-03-01

    Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

  2. Six years in orbit: the MCP detectors aboard the Extreme Ultraviolet Explorer Satellite

    NASA Astrophysics Data System (ADS)

    Vallerga, John V.; Roberts, Bryce; Dupuis, Jean; Jelinsky, Patrick N.

    1998-08-01

    The Extreme UV Explorer satellite (EUVE) was launched on June 7, 1992 with seven microchannel plate detectors behind four telescopes. All seven detectors have been operating continuously since then, cycling the high voltage bias to half voltage during the daylight portions of the orbit as well as during passage through the South Atlantic Anomaly. This paper will present the time history of the detector performance characteristics, including spatial and spectral response, gain, and flat fields. We will also discuss our experiences with the thin-film filters used to define the detector EUV bandpasses including spatial and spectral response, gain, and flat fields. We will also discuss our experiences with the thin-film filters used to define the detector EUV bandpasses including the development of 'micro' pinholes in the Al/Ti/C filters. We then illustrate specific examples of detector problems and their solutions, such as 'dithering' the spacecraft pointing to average out the small scale image distortions and off-axis pointing to avoid an on-axis 'deadspot'.

  3. Contribution of EUV resist components to the non-cleanable contaminations

    NASA Astrophysics Data System (ADS)

    Shiobara, Eishi; Takahashi, Toshiya; Sugie, Norihiko; Kikuchi, Yukiko; Takagi, Isamu; Katayama, Kazuhiro; Tanaka, Hiroyuki; Inoue, Soichi; Watanabe, Takeo; Harada, Tetsuro; Kinoshita, Hiroo

    2014-04-01

    The suppression of outgassing from extreme ultraviolet (EUV) resist needs to be addressed for realizing EUV lithography (EUVL) because outgassing is likely the main contributor to the contamination of mirror optics in EUV scanners, which results in reflectivity loss. Resist outgassing causes two types of contamination: cleanable contamination, involving hydrocarbon contaminants, and noncleanable contamination, involving noncarbon components. The relation of cleanable contamination between EUV- and electron beam (EB)-based evaluations is linear. However, the relation of noncleanable contamination is not clear. In this study, we investigated the contribution of EUV resist components to noncleanable contamination using different photoacid generator components. The cleanability of noncleanable elements (sulfur, iodine, chlorine, and bromine) in contamination films was measured and compared for the EUV- and EB-based outgas testers. The result suggested that the chlorine and bromine contaminants were completely removed after cleaning. On the other hand, sulfur and iodine remained even after cleaning. This suggested that the careful use of iodine in resist materials is necessary due to its high photoabsorption and low cleanability. In addition, the cleaning rate and noncleanability of contaminants in the EUV-based test were larger than in the EB-based test. This suggests that the contamination film in the EUV-based test is more porous than that in the EB-based test.

  4. EUV-VUV Photolysis of Molecular Ice Systems of Astronomical Interest

    NASA Technical Reports Server (NTRS)

    Wu, C. Y. Robert; Judge, D. L.; Cheng, B.-M.

    2006-01-01

    We wish to report laboratory simulation results obtained from extreme ultraviolet (EUV) and vacuum ultraviolet (VUV) photolysis of molecular ices relevant to the cometary-type ices and icy satellites of planetary systems. Specifically, we identify the type of molecules that form in the ices and/or those that come off the ice surfaces, quantify their production yields and destruction yields, understand their production mechanisms, and ascertain their significance in astronomical environments.

  5. Physical processes in EUV sources for microlithography

    NASA Astrophysics Data System (ADS)

    Banine, V. Y.; Koshelev, K. N.; Swinkels, G. H. P. M.

    2011-06-01

    The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil very high demands both technical and cost oriented. The EUVL tool operates at a wavelength of 13.5 nm, which requires the following new developments. The light production mechanism changes from conventional lamps and lasers to relatively high-temperature emitting plasmas. The light transport, mainly refractive for deep ultraviolet (DUV), should be reflective for EUV. The source specifications as derived from the customer requirements on wafer throughput mean that the output EUV source power has to be hundreds of watts. This in its turn means that tens to hundreds of kilowatts of dissipated power has to be managed in a relatively small volume. In order to keep lithography costs as low as possible, the lifetime of the components should be as long as possible and at least of the order of thousands of hours. This poses a challenge for the sources, namely how to design and manufacture components robust enough to withstand the intense environment of high heat dissipation, flows of several keV ions as well as the atomic and particular debris within the source vessel. As with all lithography tools, the imaging requirements demand a narrow illumination bandwidth. Absorption of materials at EUV wavelengths is extreme with extinguishing lengths of the order of tens of nanometres, so the balance between high transmission and spectral purity requires careful engineering. All together, EUV lithography sources present technological challenges in various fields of physics such as plasma, optics and material science. These challenges are being tackled by the source manufacturers and investigated extensively in the research facilities around the world. An overview of the published results on the topic as well as the analyses of the physical processes behind the proposed solutions will be presented in this paper.

  6. Calibration of the Berkeley EUV Airglow Rocket Spectrometer

    NASA Technical Reports Server (NTRS)

    Cotton, Daniel M.; Chakrabarti, Supriya; Siegmund, Oswald

    1989-01-01

    The Berkeley Extreme-ultraviolet Airglow Rocket Spectrometer (BEARS), a multiinstrument sounding rocket payload, made comprehensive measurements of the earth's dayglow. The primary instruments consisted of two near-normal Rowland mount spectrometers: one channel to measure several atomic oxygen features at high spectral resolution (about 1.5 A) in the band passes 980-1040 and 1300-1360 A, and the other to measure EUV dayglow and the solar EUV simultaneously in a much broader bandpass (250-1150 A) at moderate resolution (about 10 A). The payload also included a hydrogen Lyman-alpha photometer to monitor the solar irradiance and goecoronal emissions. The instrument was calibrated at the EUV calibration facility at the University of California at Berkeley, and was subsequently launched successfully on September 30, 1988 aboard a four-stage experimental sounding rocket, Black Brant XII flight 12.041 WT. The calibration procedure and resulting data are presented.

  7. PROMINENCE PLASMA DIAGNOSTICS THROUGH EXTREME-ULTRAVIOLET ABSORPTION

    SciTech Connect

    Landi, E.; Reale, F.

    2013-07-20

    In this paper, we introduce a new diagnostic technique that uses EUV and UV absorption to determine the electron temperature and column emission measure, as well as the He/H relative abundance of the absorbing plasma. If a realistic assumption on the geometry of the latter can be made and a spectral code such as CHIANTI is used, then this technique can also yield the absorbing plasma hydrogen and electron density. This technique capitalizes on the absorption properties of hydrogen and helium at different wavelength ranges and temperature regimes. Several cases where this technique can be successfully applied are described. This technique works best when the absorbing plasma is hotter than 15,000 K. We demonstrate this technique on AIA observations of plasma absorption during a coronal mass ejection eruption. This technique can be easily applied to existing observations of prominences and cold plasmas in the Sun from almost all space missions devoted to the study of the solar atmosphere, which we list.

  8. Prominence Plasma Diagnostics through Extreme-ultraviolet Absorption

    NASA Astrophysics Data System (ADS)

    Landi, E.; Reale, F.

    2013-07-01

    In this paper, we introduce a new diagnostic technique that uses EUV and UV absorption to determine the electron temperature and column emission measure, as well as the He/H relative abundance of the absorbing plasma. If a realistic assumption on the geometry of the latter can be made and a spectral code such as CHIANTI is used, then this technique can also yield the absorbing plasma hydrogen and electron density. This technique capitalizes on the absorption properties of hydrogen and helium at different wavelength ranges and temperature regimes. Several cases where this technique can be successfully applied are described. This technique works best when the absorbing plasma is hotter than 15,000 K. We demonstrate this technique on AIA observations of plasma absorption during a coronal mass ejection eruption. This technique can be easily applied to existing observations of prominences and cold plasmas in the Sun from almost all space missions devoted to the study of the solar atmosphere, which we list.

  9. Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)

    SciTech Connect

    Hector, S D; Shell, M; Taylor, J S; Tong, W M

    1999-09-28

    The mask is deemed one of the areas that require significant research and development in EUVL. Silicon wafers will be used for mask substrates for an alpha-class EUVL exposure tool due to their low-defect levels and high quality surface finish. However, silicon has a large coefficient of thermal expansion that leads to unacceptable image distortion due to absorption of EUV light. A low thermal expansion glass or glass-ceramic is likely to be required in order to meet error budgets for the 70nm node and beyond. Since EUVL masks are used in reflection, they are coated with multilayers prior to patterning. Surface imperfections, such as polishing marks, particles, scratches, or digs, are potential nucleation sites for defects in the multilayer coating, which could result in the printed defects. Therefore we are accelerating developments in the defect reduction and surface finishing of low thermal expansion mask substrates in order to understand long-term issues in controlling printable defects, and to establish the infrastructure for supplying masks. In this paper, we explain the technical requirements for EUVL mask substrates and describe our efforts in establishing a SEMI standard for EUVL masks. We will also report on the early progress of our suppliers in producing low thermal-expansion mask substrates for our development activities.

  10. Molybdenum-silicon multilayer mirrors for the extreme ultraviolet

    NASA Technical Reports Server (NTRS)

    Barbee, T. W., Jr.; Mrowka, S.; Hetrick, M. C.

    1985-01-01

    Multilayer structures of molybdenum and silicon have been synthesized by sputter deposition onto flat silicon single-crystal silicon substrates and spherically ground (0.5and 22.0-m radii) fused silica substrates; and the reflectivities for 170.4-A (72.8-eV), 160.1-A (77.4-eV), and 228-A (54.4-eV) light measured at near normal incidence. Observed peak values ranged from 26.2 to 78 percent, the highest reflectivities occurring closest to normal incidence. Energy resolutions were about 10 in all cases. Model calculations were performed using optical constants and experimentally determined multilayer structural parameters. In all cases the measured reflectivities were equal to or larger (by up to a factor of 2) than the calculated values, a result attributed to uncertainty in the optical constants used in the calculations. Experimental and calculated angular-peak positions and energy resolutions were in good agreement. The high reflectivities of these molybdenum-silicon structures will make possible application of traditional optics approaches in the EUV and support new developments including free-electron lasers.

  11. A particle-in-cell plus Monte Carlo study of plasma-induced damage of normal incidence collector optics used in extreme ultraviolet lithography

    SciTech Connect

    Wieggers, R. C.; Goedheer, W. J.; Akdim, M. R.; Bijkerk, F.; Zegeling, P. A.

    2008-01-01

    We present a kinetic simulation of the plasma formed by photoionization in the intense flux of an extreme ultraviolet lithography (EUVL) light source. The model is based on the particle-in-cell plus Monte Carlo approach. The photoelectric effect and ionization by electron collisions are included. The time evolution of the low density argon plasma is simulated during and after the EUV pulse and the ion-induced sputtering of the coating material of a normal incidence collector mirror is computed. The relation between the time and position at which the ions are created and their final energy is studied, revealing how the evolution and the properties of the sheath influence the amount of sputtered material. The influence of the gas pressure and the source intensity is studied, evaluating the behavior of Ar{sup +} and Ar{sup 2+} ions. A way to reduce the damage to the collector mirror is presented.

  12. Observations of extreme ultraviolet emissions from the Saturnian plasmasphere

    NASA Technical Reports Server (NTRS)

    Wu, F. M.; Judge, D. L.; Carlson, R. W.

    1980-01-01

    Emission signals from the Saturnian plasmasphere at wavelengths shortward of 800 A have been detected by the Pioneer ultraviolet photometer. The surface brightness of the emissions is about 0.3 + or - 0.2 R. These short-wavelength emissions are interpreted as arising primarily from the radiative decay of electron-excited atomic oxygen ions (O(2+)), in the region between 5 and 7 Saturn radii from Saturn. The total power radiated by the Saturnian plasma inferred from these ultraviolet measurements is about 2 x 10 to the 16th erg/sec, consistent with in situ plasma measurements. From the observed energy loss rate it is estimated that the ions are introduced into the plasma torus at a rate of 8 x 10 to the 25th ions/sec, possibly through the sputtering of water ice on the surface of Tethys and Dione by particle impact.

  13. The Origin of the EUV Emission in Her X-1

    NASA Technical Reports Server (NTRS)

    Leahy, D. A.; Marshall, H.

    1999-01-01

    Her X-1 exhibits a strong orbital modulation of its EUV (Extreme Ultraviolet Radiation) flux with a large decrease around time of eclipse of the neutron star, and a significant dip which appears at different orbital phases at different 35-day phases. We consider observations of Her X-1 in the EUVE by the Extreme Ultraviolet Explorer (EUVE), which includes data from 1995 near the end of the Short High state, and date from 1997 at the start of the Short High state. The observed EUV lightcurve has bright and faint phases. The bright phase can be explained as the low energy tail of the soft x-ray pulse. The faint phase emission has been modeled to understand its origin. We find: the x-ray heated surface of HZ Her is too cool to produce enough emission; the accretion disk does not explain the orbital modulation; however, reflection of x-rays off of HZ Her can produce the observed lightcurve with orbital eclipses. The dip can be explained by shadowing of the companion by the accretion disk. We discuss the constraints on the accretion disk geometry derived from the observed shadowing.

  14. Eruption of a plasma blob, associated M-class flare, and large-scale extreme-ultraviolet wave observed by SDO

    NASA Astrophysics Data System (ADS)

    Kumar, P.; Manoharan, P. K.

    2013-05-01

    We present a multiwavelength study of the formation and ejection of a plasma blob and associated extreme ultraviolet (EUV) waves in active region (AR) NOAA 11176, observed by SDO/AIA and STEREO on 25 March 2011. The EUV images observed with the AIA instrument clearly show the formation and ejection of a plasma blob from the lower atmosphere of the Sun at ~9 min prior to the onset of the M1.0 flare. This onset of the M-class flare happened at the site of the blob formation, while the blob was rising in a parabolic path with an average speed of ~300 km s. The blob also showed twisting and de-twisting motion in the lower corona, and the blob speed varied from ~10-540 km s. The faster and slower EUV wavefronts were observed in front of the plasma blob during its impulsive acceleration phase. The faster EUV wave propagated with a speed of ~785 to 1020 km s, whereas the slower wavefront speed varied in between ~245 and 465 km s. The timing and speed of the faster wave match the shock speed estimated from the drift rate of the associated type II radio burst. The faster wave experiences a reflection by the nearby AR NOAA 11177. In addition, secondary waves were observed (only in the 171 Å channel), when the primary fast wave and plasma blob impacted the funnel-shaped coronal loops. The Helioseismic Magnetic Imager (HMI) magnetograms revealed the continuous emergence of new magnetic flux along with shear flows at the site of the blob formation. It is inferred that the emergence of twisted magnetic fields in the form of arch-filaments/"anemone-type" loops is the likely cause for the plasma blob formation and associated eruption along with the triggering of M-class flare. Furthermore, the faster EUV wave formed ahead of the blob shows the signature of fast-mode MHD wave, whereas the slower wave seems to be generated by the field line compression by the plasma blob. The secondary wave trains originated from the funnel-shaped loops are probably the fast magnetoacoustic waves

  15. LWR improvement in EUV resist process

    NASA Astrophysics Data System (ADS)

    Koh, Chawon; Kim, Hyun-Woo; Kim, Sumin; Na, Hai-Sub; Park, Chang-Min; Park, Cheolhong; Cho, Kyoung-Yong

    2011-04-01

    Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. The roughness of both the resist sidewall (line width roughness [LWR]) and resist top must be overcome soon for EUVL to be implemented. Currently, LWR can vary by about 1 nm according to the recipe used. We have characterized two promising techniques to improve LWR, an EUV rinse/TBAH process and an implant process, and demonstrated their efficacy. After cleaning inspection (ACI), LWR was improved with both the rinse and implant processes. After development inspection (ADI), LWR improved (0.12 nm, 2.4%) and ACI LWR improved (0.1 nm, 2.0% improvement) after using the EUV rinse process. ADI and ACI LWR improvement (0.45 nm, 9.1%, and 0.3 nm, 6.9%, respectively) was demonstrated with the EUV rinse/TBAH process. ADI LWR improvement (0.5 nm, 8.1%) and ACI LWR improvement (-0.5 nm, -16.9%) were characterized with the implant process. Critical dimension (CD) showed similar changes through pitch after the EUV rinse or TBAH process, but the degree of change depended on the initial pattern size giving CD difference of 2 nm between 30 nm HP and 50 nm HP after the implant process. For this technique, the dependence of CD change on pattern size must be minimized. Further extensive studies with rinse or implant are strongly encouraged for continued LWR improvement and real process implementation in EUVL. Demonstrating <2.2 nm LWR after pattern transfer is important in EUVL and needs to be pursued using various technical approaches. Initial resist LWR is important in assessing LWR improvements with additional process techniques. An initial EUV LWR < ~5.0 nm is required to properly assess the validity of the technique. Further study is required to improve ADI LWR and maintain better LWR after etch with advanced EUV rinse materials. Defects also need to be confirmed following the EUV rinse and TBAH developer. Further developing the implant process should focus on LWR improvement at low

  16. [Theoretical analysis and experimental measurement for secondary electron yield of microchannel plate in extreme ultraviolet region].

    PubMed

    Li, Min; Ni, Qi-liang; Dong, Ning-ning; Chen, Bo

    2010-08-01

    Photon counting detectors based on microchannel plate have widespread applications in astronomy. The present paper deeply studies secondary electron of microchannel plate in extreme ultraviolet. A theoretical model describing extreme ultraviolet-excited secondary electron yield is presented, and the factor affecting on the secondary electron yields of both electrode and lead glass which consist of microchannel plate is analyzed according to theoretical formula derived from the model. The result shows that the higher secondary electron yield is obtained under appropriate condition that the thickness of material is more than 20 nm and the grazing incidence angle is larger than the critical angle. Except for several wavelengths, the secondary electron yields of both electrode and lead glass decrease along with the increase in the wavelength And also the quantum efficiency of microchannel plate is measured using quantum efficiency test set-up with laser-produced plasmas source as an extreme ultraviolet radiation source, and the result of experiment agrees with theoretical analysis.

  17. Laser triggered Z-pinch broadband extreme ultraviolet source for metrology

    SciTech Connect

    Tobin, I.; Lunney, J. G.; Juschkin, L.; Sidelnikov, Y.; O'Reilly, F.; Sokell, E.; Sheridan, P.

    2013-05-20

    We compare the extreme ultraviolet emission characteristics of tin and galinstan (atomic %: Ga: 78.35, In: 14.93, Sn: 6.72) between 10 nm and 18 nm in a laser-triggered discharge between liquid metal-coated electrodes. Over this wavelength range, the energy conversion efficiency for galinstan is approximately half that of tin, but the spectrum is less strongly peaked in the 13-15 nm region. The extreme ultraviolet source dimensions were 110 {+-} 25 {mu}m diameter and 500 {+-} 125 {mu}m length. The flatter spectrum, and -19 Degree-Sign C melting point, makes this galinstan discharge a relatively simple high radiance extreme ultraviolet light source for metrology and scientific applications.

  18. Simulation and mitigation of the magneto-Rayleigh-Taylor instabilities in Z-pinch gas discharge extreme ultraviolet plasma radiation sources

    SciTech Connect

    Huang, B.; Tomizuka, T.; Xie, B.; Sakai, Y.; Zhu, Q.; Song, I.; Okino, A.; Xiao, F.; Watanabe, M.; Hotta, E.

    2013-11-15

    The development and use of a single-fluid two-temperature approximated 2-D Magneto-Hydrodynamics code is reported. Z-pinch dynamics and the evolution of Magneto-Rayleigh-Taylor (MRT) instabilities in a gas jet type Extreme Ultraviolet (EUV) source are investigated with this code. The implosion and stagnation processes of the Z-pinch dynamics and the influence of initial perturbations (single mode, multi- mode, and random seeds) on MRT instability are discussed in detail. In the case of single mode seeds, the simulation shows that the growth rates for mm-scale wavelengths up to 4 mm are between 0.05 and 0.065 ns{sup −1}. For multi-mode seeds, the mode coupling effect leads to a series of other harmonics, and complicates MRT instability evolution. For perturbation by random seeds, the modes evolve to longer wavelengths and finally converge to a mm-scale wavelength approximately 1 mm. MRT instabilities can also alter the pinch stagnation state and lead to temperature and density fluctuations along the Z axis, which eventually affects the homogeneity of the EUV radiation output. Finally, the simulation results are related to experimental results to discuss the mitigations of MRT instability.

  19. The Nature of the Unidentified EUV Sources: Accreting Isolated Neutron Stars?

    NASA Technical Reports Server (NTRS)

    Madau, Piero

    1999-01-01

    The aims of this project were: (1) to investigate the nature of the EUVE (Extreme Ultraviolet Explorer Satellite) 'NOID' sources, objects detected in the EUV bandpass but with no previous identification at optical or other energies; (2) to study the possible association of NOID sources with nearby, isolated neutron stars among the 1e9 predicted to exist in the Galaxy. These dead radio pulsars have not been detected so far in large numbers, but accretion from the interstellar medium can make them bright at EUV wavelengths; and (3) to use the EUVE data to set constraints on neutron star evolution, accretion physics and population properties. The original objectives of our program remain relevant. Indeed, the level of research in this area has increased substantially since our proposal was submitted as a result of new data from the ROSAT (Roentgen Satellite).

  20. At-wavelength interferometry of high-NA diffraction-limited EUV optics

    SciTech Connect

    Goldberg, Kenneth A.; Naulleau, Patrick; Rekawa, Senajith; Denham, Paul; Liddle, J. Alexander; Anderson, Erik; Jackson, Keith; Bokor, Jeffrey; Attwood, David

    2003-08-01

    Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub{angstrom}-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed.

  1. EUV light source with high brightness at 13.5 nm

    SciTech Connect

    Borisov, V M; Prokof'ev, A V; Khristoforov, O B; Koshelev, K N; Khadzhiyskiy, F Yu

    2014-11-30

    The results of the studies on the development of a highbrightness radiation source in the extreme ultraviolet (EUV) range are presented. The source is intended for using in projection EUV lithography, EUV mask inspection, for the EUV metrology, etc. Novel approaches to creating a light source on the basis of Z-pinch in xenon allowed the maximal brightness [130 W(mm{sup 2} sr){sup -1}] to be achieved in the vicinity of plasma for this type of radiation sources within the 2% spectral band centred at the wavelength of 13.5 nm that corresponds to the maximal reflection of multilayer Mo/Si mirrors. In this spectral band the radiation power achieves 190 W in the solid angle of 2π at a pulse repetition rate of 1.9 kHz and an electric power of 20 kW, injected into the discharge. (laser applications and other topics in quantum electronics)

  2. Sun's image in the extreme ultraviolet radiation emitted from the corona

    NASA Technical Reports Server (NTRS)

    1973-01-01

    The Skylab space station's Extreme Ultraviolet monitor is a closed loop television system that permitted man for the first time to watch the Sun's image in the extreme ultraviolet radiation emitted from its million-degree outer atmosphere, the corona. This photograph shows a view of the TV scope made by Scientist-Astronaut Owen K. Garriott, Skylab 3 science pilot, on August 15, 1973. Dr. Garriott made this picture with a Land-Polaroid SX-70 camera - the first time that any Polaroid camera has been used in space.

  3. Explosion of Xenon Clusters Driven by Intense Femtosecond Pulses of Extreme Ultraviolet Light

    SciTech Connect

    Murphy, B. F.; Hoffmann, K.; Belolipetski, A.; Keto, J.; Ditmire, T.

    2008-11-14

    The explosions of large xenon clusters irradiated by intense, femtosecond extreme ultraviolet pulses at a wavelength of 38 nm have been studied. Using high harmonic generation from a 35 fs laser, clusters have been irradiated by extreme ultraviolet pulses at intensity approaching 10{sup 11} W/cm{sup 2}. Charge states up to Xe{sup 8+} are observed, states well above those produced by single atom illumination, indicating that plasma continuum lowering is important. Furthermore, the kinetic energy distribution of the exploding ions is consistent with a quasineutral hydrodynamic expansion, rather than a Coulomb explosion.

  4. Wave-mixing with high-order harmonics in extreme ultraviolet region

    SciTech Connect

    Dao, Lap Van; Dinh, Khuong Ba; Le, Hoang Vu; Gaffney, Naylyn; Hannaford, Peter

    2015-01-12

    We report studies of the wave-mixing process in the extreme ultraviolet region with two near-infrared driving and controlling pulses with incommensurate frequencies (at 1400 nm and 800 nm). A non-collinear scheme for the two beams is used in order to spatially separate and to characterise the properties of the high-order wave-mixing field. We show that the extreme ultraviolet frequency mixing can be treated by perturbative, very high-order nonlinear optics; the modification of the wave-packet of the free electron needs to be considered in this process.

  5. Comparison of CD measurements of an EUV photomask by EUV scatterometry and CD-AFM

    NASA Astrophysics Data System (ADS)

    Scholze, Frank; Soltwisch, Victor; Dai, Gaoliang; Henn, Mark-Alexander; Gross, Hermann

    2013-09-01

    EUV scatterometry is a potential high-throughput measurement method for the characterization of EUV photomask structures. We present a comparison of angle resolved extreme ultraviolet (EUV) scatterometry and critical dimension atomic force microscope (CD-AFM) as a reference metrology for measurements of geometrical parameters like line width (CD), height and sidewall angle of EUV photomask structures. The structures investigated are dense and semidense bright and dark lines with different nominal CDs between 140 nm and 540 nm. The results show excellent linearity of the critical dimension measured with both methods within a range of only 1.8 nm and an offset of the absolute values below 3 nm. A maximum likelihood estimation (MLE) method is used to reconstruct the shape parameters and to estimate their uncertainties from the measured scattering efficiencies. The newly developed CD-AFM at PTB allows versatile measurements of parameters such as height, CD, sidewall angle, line edge/width roughness, corner rounding, and pitch. It applies flared tips to probe steep and even undercut sidewalls and employs a new vector approaching probing (VAP) strategy which enables very low tip wear and high measurement flexibility. Its traceability is ensured by a set of calibrated step-height and reference CD standards.

  6. Rising from the Dead: the Revival of the EUVE E/PO

    NASA Astrophysics Data System (ADS)

    Cullison, J. L.; Craig, N.; Stroozas, B. A.; Malina, R. F.

    2000-05-01

    NASA's Extreme Ultraviolet Explorer (EUVE) is dedicated to gathering data on our sky via instrumentation sensitive to the region of light between 76 and 760 angstroms. Since the all-sky survey was completed in 1993, astronomers have made studies of selected objects with EUVE to determine their physical properties and chemical compositions. Also, they have learned about the conditions that prevail and the processes at work in stars, planets, and other sources of EUV radiation. In its pre-launch and early prime mission, EUVE had a thriving education and public outreach (E/PO) program formed expressly to spread the word on recent EUVE findings, but due to budgetary restraints in its extended mission, the project has been unable in recent years to support extensive E/PO efforts. Now in it's eighth year of operation, the EUVE Project has revived its E/PO efforts without significantly impacting its shoe-string budget. Web sites are being reconstructed, including sophisticated interactive learning environments where elementary through college level students, teachers, and the general public can select from lesson plans including, for example, an introductory astronomical module on the relationship between spectra and object classification, download three-dimensional cutouts of the EUVE skymap, view a slide show on the history and instrumentation of the satellite, take a virtual tour of the EUVE observatory, find where EUVE is in its orbit, and catch up on EUVE's most recent news and events. EUVE's revived internet E/PO presence is supplemented with staff and technical support (up to 10% of each staff person's time) of hands-on elementary and community projects coordinated by the UC Berkeley Center for Science Education (the now independent offshoot of the original EUVE E/PO). All elements of the EUVE E/PO are supported without impacting the efficient and highly productive science goals of the small-staffed mission. Additional EUVE E/PO efforts in the works include

  7. EUV tools: hydrogen gas purification and recovery strategies

    NASA Astrophysics Data System (ADS)

    Landoni, Cristian; Succi, Marco; Applegarth, Chuck; Riddle Vogt, Sarah

    2015-03-01

    The technological challenges that have been overcome to make extreme ultraviolet lithography (EUV) a reality have been enormous1. This vacuum driven technology poses significant purity challenges for the gases employed for purging and cleaning the scanner EUV chamber and source. Hydrogen, nitrogen, argon and ultra-high purity compressed dry air (UHPCDA) are the most common gases utilized at the scanner and source level. Purity requirements are tighter than for previous technology node tools. In addition, specifically for hydrogen, EUV tool users are facing not only gas purity challenges but also the need for safe disposal of the hydrogen at the tool outlet. Recovery, reuse or recycling strategies could mitigate the disposal process and reduce the overall tool cost of operation. This paper will review the types of purification technologies that are currently available to generate high purity hydrogen suitable for EUV applications. Advantages and disadvantages of each purification technology will be presented. Guidelines on how to select the most appropriate technology for each application and experimental conditions will be presented. A discussion of the most common approaches utilized at the facility level to operate EUV tools along with possible hydrogen recovery strategies will also be reported.

  8. {ital EUVE} observations of U Geminorum in outburst

    SciTech Connect

    Long, K.S.; Mauche, C.W.; Raymond, J.C.; Szkody, P.; Mattei, J.A.

    1996-10-01

    We have observed U Gem during the peak and declining phases of a wide outburst in 1993 December with the {ital Extreme} {ital Ultraviolet} {ital Explorer} ({ital EUVE}) satellite. At peak, U Gem was one of the brightest EUV sources in the sky. The spectrum of the source is complex. Fitted to a blackbody spectrum, the apparent temperature at peak is {approximately}140,000 K, the luminosity is {approximately}4{times}10{sup 34}({ital D}/90 pc){sup 2} ergss{sup {minus}1}, and the minimum size of the emitting region is comparable to that of the white dwarf (WD). If the EUV emission arises primarily from the boundary layer, then the boundary layer luminosity in U Gem is comparable to the disk luminosity. The EUV source is partially eclipsed at orbital phases 0.6{endash}0.8. The eclipse spectrum, which we associate with a wind emerging from the vicinity of the white dwarf, is dominated by emission features. The identification of these emission features with transitions expected in a relatively cool ({ital T}{lt}160,000 K), photoionized plasma helps to resolve a controversy concerning the ionization state of winds of dwarf novae. The EUV lines arise from the dominant ionization states of the wind, and their strengths suggest that the wind mass-loss rate, at least in U Gem, is a substantial fraction of the WD accretion rate. {copyright} {ital 1996 The American Astronomical Society.}

  9. IUE spectra of Feige 4, a suspected source of extreme-ultraviolet radiation

    NASA Technical Reports Server (NTRS)

    Holm, A. V.; Boggess, A.

    1982-01-01

    IUE spectra are presented for Feige 4, a DB-type white dwarf. The observed energy distribution is in good agreement with that predicted by a model atmosphere with an effective temperature of 15,500 K and having extremely low hydrogen and metal abundances. These results are evidence against Feige 4 being the source of the apparent extreme-ultraviolet signal detected by Prognoz 6.

  10. Comparing Vacuum and Extreme Ultraviolet Radiation for Postionization of Laser Desorbed Neutrals from Bacterial Biofilms and Organic Fullerene

    SciTech Connect

    Gaspera, Gerald L.; Takahashi, Lynelle K.; Zhou, Jia; Ahmed, Musahid; Moored, Jerry F.; Hanley, Luke

    2010-12-08

    Vacuum and extreme ultraviolet radiation from 8 - 24 eV generated at a synchrotron was used to postionize laser desorbed neutrals of antibiotic-treated biofilms and a modified fullerene using laser desorption postionization mass spectrometry (LDPI-MS). Results show detection of the parent ion, various fragments, and extracellular material from biofilms using LDPI-MS with both vacuum and extreme ultraviolet photons. Parent ions were observed for both cases, but extreme ultraviolet photons (16-24 eV) induced more fragmentation than vacuum ultraviolet (8-14 eV) photons.

  11. Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements

    SciTech Connect

    Goldberg, K; Barty, A; Liu, Y; Kearney, P; Tezuka, Y; Terasawa, T; Taylor, J S; Han, H; Wood, O

    2006-06-19

    The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lithography. Integral to this effort is the development and characterization of mask inspection tools that are sensitive enough to detect critical defects with high confidence. Using a single programmed-defect mask with a range of buried bump-type defects, we report a comparison of measurements made in four different mask-inspection tools: one commercial tool using 488-nm wavelength illumination, one prototype tool that uses 266-nm illumination, and two non-commercial EUV ''actinic'' inspection tools. The EUV tools include a darkfield imaging microscope and a scanning microscope. Our measurements show improving sensitivity with the shorter wavelength non-EUV tool, down to 33-nm spherical-equivalent-volume diameter, for defects of this type. Measurements conditions were unique to each tool, with the EUV tools operating at a much slower inspection rate. Several defects observed with EUV inspection were below the detection threshold of the non-EUV tools.

  12. The Soft X-Ray Variability and Spectrum of 1H0419-577 from a Long EUVE Observation

    NASA Technical Reports Server (NTRS)

    Marshall, H. L.; Halpern, J. P.; Leighly, K.

    1999-01-01

    The active galaxy associated with the hard X-ray source 1H0419-577 was observed with Extreme Ultraviolet Explorer Satellite (EUVE) for about 25 days to obtain a long, contiguous light curve and an Extreme Ultraviolet Radiation (EUV) spectrum. An EUV source was detected which was about as bright as the AGN and was later identified as an AM Her type system. The AGN showed variations as large as a factor of two over 5-10 day time scales and occasionally varied by 20-30% in less than 0.5day. The spectrum is dominated by a continuum that is poorly fit by a simple power law. There are possible emission lines without positive identifications but the lines are likely to be spurious.

  13. Synergistic effect of EUV from the laser-sustained detonation plasma in a ground-based atomic oxygen simulation on fluorinated polymers

    SciTech Connect

    Tagawa, Masahito; Abe, Shingo; Kishida, Kazuhiro; Yokota, Kumiko; Okamoto, Akio

    2009-01-05

    The contribution of extreme ultraviolet (EUV) from a laser-sustained plasma on the mass loss phenomenon of fluorinated polymer in a ground-based laser-detonation atomic oxygen beam source was evaluated. The atomic oxygen beam and EUV from the oxygen plasma were separated by the high-speed chopper wheel installed in the beam source. The mass changes of the fluorinated polymer and polyimide were measured from the frequency shift of the quartz crystal microbalance during the beam exposures. It has been made clear that the fluorinated polymer erodes by EUV exposure alone. In contrast, no erosion was detected for polyimide by EUV alone. The atomic oxygen-induced erosion was measured for both materials even without EUV exposure. However, no strong synergistic effect was observed for a fluorinated polymer even under the simultaneous exposure condition of atomic oxygen and EUV. Similar results were observed even in simultaneous exposure of atomic oxygen (without EUV) and 172 nm vacuum ultraviolet (VUV) from an excimer lamp. These experiments suggest that the primary origin of the accelerated erosion of fluorinated polymer observed in a laser detonation atomic oxygen source is not the EUV from the laser-sustained plasma.

  14. Polarization-ratio reflectance measurements in the extreme ultraviolet.

    PubMed

    Brimhall, N; Heilmann, N; Ware, M; Peatross, J

    2009-05-01

    We demonstrate a technique for determining optical constants of materials in the extreme UV from the ratio of p-polarized to s-polarized reflectance. The measurements are based on laser-generated high-order harmonics, which have easily rotatable linear polarization but that are prone to brightness fluctuations and systematic drifts during measurement. Rather than measure the absolute reflectance, we extract the optical constants of a material from the ratio of p-polarized to s-polarized reflectance at multiple incident angles. This has the advantage of dividing out long-term fluctuations and possible systematic errors. We show that the reflectance ratio is as sensitive as the absolute reflectance to material optical properties.

  15. Extreme ultraviolet spectroheliograph ATM experiment S082A.

    PubMed

    Tousey, R; Bartoe, J D; Brueckner, G E; Purcell, J D

    1977-04-01

    The XUV spectroheliograph, Apollo Telescope Mount experiment S082A, is described. The instrument was a slitless Wadsworth grating spectrograph that employed photographic recording. The grating was of 4-m radius, ruled with 3600 grooves/mm. By rotating the grating to positions where the normal was at 255 A or 400 A, the spectral ranges 175-335 A and 320-480 A, respectively, were covered with 2-sec of arc spatial resolution. Close to the normal the resolution reached 2 sec of arc, but at the extreme limit, 630 A, it was 10 sec of arc or worse. The aberrations of the instrument are discussed in detail as are the provisions necessary to maintain optimum imagery and reliability in a space environment. During the mission about 1020 exposures were made covering 171-335 A or 320-630 A.

  16. Space weather: recovering the variation of the stellar EUV spectral Energy distribution from the companion exoplanet FUV transit observation

    NASA Astrophysics Data System (ADS)

    Ben-Jaffel, Lotfi; Guo, Jianheng

    2016-07-01

    The stellar extreme ultraviolet (EUV) irradiation determines the atmospheric properties of exoplanets. Recently, by varying the profiles of the EUV spectral energy distribution (SED), we tested the influences of stellar EUV SEDs on the physical and chemical properties of the escaping atmosphere (Guo & Ben-Jaffel, 2015). One of our major results was that the composition and species distributions in the atmosphere could be dramatically modified by the different profiles of the EUV SED. For exoplanets with a high hydrodynamic escape rate, the amount of atomic hydrogen produced by photoionization at different altitudes can vary by one to two orders of magnitude with the variation of stellar EUV SEDs. For exoplanet HD 189733b, it was possible to explain the time variability observed during transit in the Lyman-α line by the Hubble Space Telescope (HST) between 2010 and 2011 by a change in the EUV SED of the host K star. Our proposed technique provides a straightforward and easy-to-follow proxy to connect the EUV SED of the star with the planetary companion Lyman--α transit absorption, the monitoring of which may provide a direct measure of the stellar EUV flux. Here, we extend our study using new HST FUV observations.

  17. SECONDARY WAVES AND/OR THE 'REFLECTION' FROM AND 'TRANSMISSION' THROUGH A CORONAL HOLE OF AN EXTREME ULTRAVIOLET WAVE ASSOCIATED WITH THE 2011 FEBRUARY 15 X2.2 FLARE OBSERVED WITH SDO/AIA AND STEREO/EUVI

    SciTech Connect

    Olmedo, Oscar; Vourlidas, Angelos; Zhang Jie; Cheng Xin

    2012-09-10

    For the first time, the kinematic evolution of a coronal wave over the entire solar surface is studied. Full Sun maps can be made by combining images from the Solar Terrestrial Relations Observatory satellites, Ahead and Behind, and the Solar Dynamics Observatory, thanks to the wide angular separation between them. We study the propagation of a coronal wave, also known as the 'Extreme Ultraviolet Imaging Telescope' wave, and its interaction with a coronal hole (CH) resulting in secondary waves and/or reflection and transmission. We explore the possibility of the wave obeying the law of reflection. In a detailed example, we find that a loop arcade at the CH boundary cascades and oscillates as a result of the extreme ultraviolet (EUV) wave passage and triggers a wave directed eastward that appears to have reflected. We find that the speed of this wave decelerates to an asymptotic value, which is less than half of the primary EUV wave speed. Thanks to the full Sun coverage we are able to determine that part of the primary wave is transmitted through the CH. This is the first observation of its kind. The kinematic measurements of the reflected and transmitted wave tracks are consistent with a fast-mode magnetohydrodynamic wave interpretation. Eventually, all wave tracks decelerate and disappear at a distance. A possible scenario of the whole process is that the wave is initially driven by the expanding coronal mass ejection and subsequently decouples from the driver and then propagates at the local fast-mode speed.

  18. SUMER: Solar Ultraviolet Measurements of Emitted Radiation

    NASA Technical Reports Server (NTRS)

    Wilhelm, K.; Axford, W. I.; Curdt, W.; Gabriel, A. H.; Grewing, M.; Huber, M. C. E.; Jordan, S. D.; Kuehne, M.; Lemaire, P.; Marsch, E.

    1992-01-01

    The experiment Solar Ultraviolet Measurements of Emitted Radiation (SUMER) is designed for the investigations of plasma flow characteristics, turbulence and wave motions, plasma densities and temperatures, structures and events associated with solar magnetic activity in the chromosphere, the transition zone and the corona. Specifically, SUMER will measure profiles and intensities of Extreme Ultraviolet (EUV) lines emitted in the solar atmosphere ranging from the upper chromosphere to the lower corona; determine line broadenings, spectral positions and Doppler shifts with high accuracy, provide stigmatic images of selected areas of the Sun in the EUV with high spatial, temporal and spectral resolution and obtain full images of the Sun and the inner corona in selectable EUV lines, corresponding to a temperature from 10,000 to more than 1,800,000 K.

  19. Studies of Solar EUV Irradiance from SOHO

    NASA Technical Reports Server (NTRS)

    Floyd, Linton

    2002-01-01

    The Extreme Ultraviolet (EUV) irradiance central and first order channel time series (COC and FOC) from the Solar EUV Monitor aboard the Solar and Heliospheric observatory (SOHO) issued in early 2002 covering the time period 1/1/96-31/1201 were analyzed in terms of other solar measurements and indices. A significant solar proton effect in the first order irradiance was found and characterized. When this effect is removed, the two irradiance time series are almost perfectly correlated. Earlier studies have shown good correlation between the FOC and the Hall core-to-wing ratio and likewise, it was the strongest component of the COC. Analysis of the FOC showed dependence on the F10.7 radio flux. Analysis of the CDC signals showed additional dependences on F10.7 and the GOES x-ray fluxes. The SEM FOC was also well correlated with thein 30.4 nm channel of the SOHO EUV Imaging Telescope (EIT). The irradiance derived from all four EIT channels (30.4 nm, 17.1 nm, 28.4 nm, and 19.5 nm) showed better correlation with MgII than F10.7.

  20. XCEED: XTREME commercial EUV exposure diagnostic experiment

    NASA Astrophysics Data System (ADS)

    Antonsen, Erik L.; Thompson, Keith C.; Hendricks, Matthew R.; Alman, Darren A.; Jurczyk, Brian E.; Ruzic, David N.; Chinh, Tran Duc; Edwards, Ginger; Wurm, Stefan; Wood, Obert; Bristol, Robert

    2005-05-01

    The XCEED chamber was designed to allow diagnostic access to the conditions experienced by collecting optics for a discharge produced plasma (DPP) source. The chamber provides access for EUV photodiodes, sample exposure tests, Faraday cup measurements, and characterization of the ion debris field by a spherical sector energy analyzer (ESA). The Extreme Ultraviolet (EUV) light source creates a xenon z-pinch for the generation of 13.5 nm light. Typical EUV emission is characterized though a control photodiode. The chamber also allows characterization of optic samples at varying exposure times for normal and grazing incidence reflection angles during tests lasting up to 40 million pulses. The principal investigation is characterization of the debris field and the erosive effects on optics present. Light emission from the z-pinch is followed by ejection of multiply-charged ions which can significantly damage nearby mirror surfaces. Characterization of the ejecta is performed with an ESA that diagnoses fast ion species by energy-to-charge ratio using ion time of flight (ITOF) analysis. The ITOF-ESA is used to characterize both the energy and angular distribution of the debris field. In the current paper, the ESA is applied only to the ion debris emitted from the source. The effects of total particle flux on mirror samples are investigated through exposure testing. Samples are exposed to the source plasma and surface metrology is performed to analyze erosion and deposition effects on mirrors within the source chamber.