Modeling of beryllium sputtering and re-deposition in fusion reactor plasma facing components

NASA Astrophysics Data System (ADS)

Zimin, A. M.; Danelyan, L. S.; Elistratov, N. G.; Gureev, V. M.; Guseva, M. I.; Kolbasov, B. N.; Kulikauskas, V. S.; Stolyarova, V. G.; Vasiliev, N. N.; Zatekin, V. V.

2004-08-01

Quantitative characteristics of Be-sputtering by hydrogen isotope ions in a magnetron sputtering system, the microstructure and composition of the sputtered and re-deposited layers were studied. The energies of H + and D + ions varied from 200 to 300 eV. The ion flux density was ˜3 × 10 21 m -2 s -1. The irradiation doses were up to 4 × 10 25 m -2. For modeling of the sputtered Be-atom re-deposition at increased deuterium pressures (up to 0.07 torr), a mode of operation with their effective return to the Be-target surface was implemented. An atomic ratio O/Be ≅ 0.8 was measured in the re-deposited layers. A ratio D/Be decreases from 0.15 at 375 K to 0.05 at 575 K and slightly grows in the presence of carbon and tungsten. The oxygen concentration in the sputtered layers does not exceed 3 at.%. The atomic ratio D/Be decreases there from 0.07 to 0.03 at target temperatures increase from 350 to 420 K.

Effect of rapid thermal annealing on the electrical, optical and structural properties of ZnO-doped In2O3 films grown by linear facing target sputtering.

PubMed

Cho, Chung-Ki; Kim, Han-Ki

2012-04-01

We investigated the effect of rapid thermal annealing on the electrical, optical, and structural properties of ZnO-doped In2O3 (ZIO) films grown at different Ar/O2 flow ratios (15/0 and 15/1 sccm) by using linear facing target sputtering. It was found that the ZIO films grown at different Ar/O2, flow ratios showed different electrical and optical behavior with increasing rapid thermal annealing temperature. Synchrotron X-ray scattering examination showed that the different electrical and optical properties of the ZIO films could be attributed to the difference in preferred orientation with an increase in rapid thermal annealing temperature.

Ferromagnetic resonance of facing-target sputtered epitaxial γ‧-Fe4N films: the influence of thickness and substrates

NASA Astrophysics Data System (ADS)

Lai, Zhengxun; Li, Zirun; Liu, Xiang; Bai, Lihui; Tian, Yufeng; Mi, Wenbo

2018-06-01

The microstructure and high frequency properties of facing-target sputtered epitaxial γ‧-Fe4N films were investigated in detail. It was found that the eddy current in ultrathin γ‧-Fe4N films is too small to influence the ferromagnetic resonance (FMR) linewidth, where the linewidth is mostly determined by intrinsic damping and the two-magnon scattering (TMS) process. In relatively thick films, the TMS process can significantly affect the linewidth due to the roughness on the sample surface. However, the TMS process in a thin film is quite weak because of its smooth surface. The Gilbert damping constant of about 0.0135 in our γ‧-Fe4N films is smaller than the experimental value in the previous work. Moreover, substrates can also influence the FMR linewidth of the γ‧-Fe4N films by the TMS process. Besides, the resonance field of polycrystalline γ‧-Fe4N film is larger than the epitaxial ones because of the lack of a magnetic anisotropic field, but the linewidth of the polycrystalline γ‧-Fe4N film is smaller.

Assessing Reliability of Cold Spray Sputter Targets in Photovoltaic Manufacturing

NASA Astrophysics Data System (ADS)

Hardikar, Kedar; Vlcek, Johannes; Bheemreddy, Venkata; Juliano, Daniel

2017-10-01

Cold spray has been used to manufacture more than 800 Cu-In-Ga (CIG) sputter targets for deposition of high-efficiency photovoltaic thin films. It is a preferred technique since it enables high deposit purity and transfer of non-equilibrium alloy states to the target material. In this work, an integrated approach to reliability assessment of such targets with deposit weight in excess of 50 lb. is undertaken, involving thermal-mechanical characterization of the material in as-deposited condition, characterization of the interface adhesion on cylindrical substrate in as-deposited condition, and developing means to assess target integrity under thermal-mechanical loads during the physical vapor deposition (PVD) sputtering process. Mechanical characterization of cold spray deposited CIG alloy is accomplished through the use of indentation testing and adaptation of Brazilian disk test. A custom lever test was developed to characterize adhesion along the cylindrical interface between the CIG deposit and cylindrical substrate, overcoming limitations of current standards. A cohesive zone model for crack initiation and propagation at the deposit interface is developed and validated using the lever test and later used to simulate the potential catastrophic target failure in the PVD process. It is shown that this approach enables reliability assessment of sputter targets and improves robustness.

Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets

DOEpatents

Makowiecki, Daniel M.; Ramsey, Philip B.; Juntz, Robert S.

1995-01-01

An improved method for fabricating pyrolytic graphite sputtering targets with superior heat transfer ability, longer life, and maximum energy transmission. Anisotropic pyrolytic graphite is contoured and/or segmented to match the erosion profile of the sputter target and then oriented such that the graphite's high thermal conductivity planes are in maximum contact with a thermally conductive metal backing. The graphite contact surface is metallized, using high rate physical vapor deposition (HRPVD), with an aluminum coating and the thermally conductive metal backing is joined to the metallized graphite target by one of four low-temperature bonding methods; liquid-metal casting, powder metallurgy compaction, eutectic brazing, and laser welding.

Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets

DOEpatents

Makowiecki, D.M.; Ramsey, P.B.; Juntz, R.S.

1995-07-04

An improved method is disclosed for fabricating pyrolytic graphite sputtering targets with superior heat transfer ability, longer life, and maximum energy transmission. Anisotropic pyrolytic graphite is contoured and/or segmented to match the erosion profile of the sputter target and then oriented such that the graphite`s high thermal conductivity planes are in maximum contact with a thermally conductive metal backing. The graphite contact surface is metallized, using high rate physical vapor deposition (HRPVD), with an aluminum coating and the thermally conductive metal backing is joined to the metallized graphite target by one of four low-temperature bonding methods; liquid-metal casting, powder metallurgy compaction, eutectic brazing, and laser welding. 11 figs.

Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

PubMed

Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

2012-06-01

In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

Magnetron sputtering source

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

1994-01-01

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

Magnetron sputtering source

DOEpatents

Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

1994-08-02

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

Ultra-hard AlMgB14 coatings fabricated by RF magnetron sputtering from a stoichiometric target

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Khartsev, S. I.; Böhlmark, J.; Ahlgren, M.

2015-01-01

For the first time hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric ceramic AlMgB14 target. Optimized processing conditions (substrate temperature, target sputtering power and target-to-substrate distance) enable fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young's modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 and 275 GPa at 200 nm depth in 2 μm thick film.

Sputtering of uranium

NASA Technical Reports Server (NTRS)

Gregg, R.; Tombrello, T. A.

1978-01-01

Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

NASA Astrophysics Data System (ADS)

Sumiyama, Takashi; Fukumoto, Takaya; Ohtsu, Yasunori; Tabaru, Tatsuo

2017-05-01

Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO) thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 - 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002) axis.

Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-04-02

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

High-density convergent plasma sputtering device for a liquid metal target using an unheated glass plate

NASA Astrophysics Data System (ADS)

Motomura, T.; Tabaru, T.

2018-06-01

A high-density convergent plasma sputtering device has been developed for a liquid metal target, using an unheated glass plate. The convergent magnetic field lines, which are produced by an external solenoid coil and a permanent magnet positioned behind the liquid metal target, effectively transport high-density plasmas near the target. In this study, a liquid gallium target was sputtered with nitrogen plasmas, without additive gas required for depositing gallium nitride films on the unheated substrates. The deposition rate of the GaN film was estimated at ˜13 nm/min at a gas pressure of 0.2 Pa. A strong diffraction peak was observed along the GaN (002) axis, with the use of an unheated glass plate and a target-substrate distance of ˜45 mm.

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

Magnetron-Sputtered Amorphous Metallic Coatings

NASA Technical Reports Server (NTRS)

Thakoor, A. P.; Mehra, M.; Khanna, S. K.

1985-01-01

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

NASA Astrophysics Data System (ADS)

Schifano, R.; Riise, H. N.; Domagala, J. Z.; Azarov, A. Yu.; Ratajczak, R.; Monakhov, E. V.; Venkatachalapathy, V.; Vines, L.; Chan, K. S.; Wong-Leung, J.; Svensson, B. G.

2017-01-01

Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 °C on both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the Rutherford backscattering and channeling spectrum, χmin, equal to ˜3% and ˜12% and a full width at half maximum of the 00.2 diffraction peak rocking curve of (70 ± 10) arc sec and (1400 ± 100) arc sec have been found for samples grown on the Zn and O face, respectively. The structural characteristics of the film deposited on the Zn face are comparable with those of epilayers grown by more complex techniques like molecular beam epitaxy. In contrast, the film simultaneously deposited on the O-face exhibits an inferior crystalline structure ˜0.7% strained in the c-direction and a higher atomic number contrast compared with the substrate, as revealed by high angle annular dark field imaging measurements. These differences between the Zn- and O-face films are discussed in detail and associated with the different growth mechanisms prevailing on the two surfaces.

Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

2012-02-01

The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

The target material influence on the current pulse during high power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Moens, Filip; Konstantinidis, Stéphanos; Depla, Diederik

2017-10-01

The current-time characteristic during high power pulsed magnetron sputtering is measured under identical conditions for seventeen different target materials. Based on physical processes such as gas rarefaction, ion-induced electron emission, and electron impact ionization, two test parameters were derived that significantly correlate with specific features of the current-time characteristic: i) the peak current is correlated to the momentum transfer between the sputtered material and the argon gas, ii) while the observed current plateau after the peak is connected to the metal ionization rate.

Sputtered silicon nitride coatings for wear protection

NASA Technical Reports Server (NTRS)

Grill, A.; Aron, P. R.

1982-01-01

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

Microscopic Examination of Cold Spray Cermet Sn+In2O3 Coatings for Sputtering Target Materials

PubMed Central

Baszczuk, A.; Rutkowska-Gorczyca, M.; Jasiorski, M.; Małachowska, A.; Posadowski, W.; Znamirowski, Z.

2017-01-01

Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In2O3 coating sprayed onto copper substrate. The microstructure and properties of the feedstock powder prepared using three various methods as well as the deposited ones by low-pressure cold spraying coatings were evaluated, compared, and analysed. Produced cermet Sn+In2O3 targets were employed in first magnetron sputtering process to deposit preliminary, thin, transparent conducting oxide films onto the glass substrates. The resistivity of obtained preliminary films was measured and allows believing that fabrication of TCO (transparent conducting oxide) films using targets produced by cold spraying is possible in the future, after optimization of the deposition conditions. PMID:29109810

Microscopic Examination of Cold Spray Cermet Sn+In2O3 Coatings for Sputtering Target Materials.

PubMed

Winnicki, M; Baszczuk, A; Rutkowska-Gorczyca, M; Jasiorski, M; Małachowska, A; Posadowski, W; Znamirowski, Z; Ambroziak, A

2017-01-01

Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In 2 O 3 coating sprayed onto copper substrate. The microstructure and properties of the feedstock powder prepared using three various methods as well as the deposited ones by low-pressure cold spraying coatings were evaluated, compared, and analysed. Produced cermet Sn+In 2 O 3 targets were employed in first magnetron sputtering process to deposit preliminary, thin, transparent conducting oxide films onto the glass substrates. The resistivity of obtained preliminary films was measured and allows believing that fabrication of TCO (transparent conducting oxide) films using targets produced by cold spraying is possible in the future, after optimization of the deposition conditions.

Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuschel, Thomas; Keudell, Achim von

2010-05-15

Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with thismore » microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.« less

Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Ameen, M.S.; Kingon, A.I.

1989-01-01

Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr{sup +} or Xe{sup +} ions is preferable to the most commonly used Ar{sup +} ions, since the undesirable phenomena mentioned above are minimized for the first two ions.more » These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs.« less

Ion beam sputtering of fluoropolymers

NASA Technical Reports Server (NTRS)

Sovey, J. S.

1978-01-01

Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

Monte Carlo simulation of the influence of pressure and target-substrate distance on the sputtering process for metal and semiconductor layers

NASA Astrophysics Data System (ADS)

Bouazza, Abdelkader; Settaouti, Abderrahmane

2016-07-01

The energy and the number of particles arriving at the substrate during physical vapor deposition (PVD) are in close relation with divers parameters. In this work, we present the influence of the distance between the target and substrate and the gas pressure in the sputtering process of deposited layers of metals (Cu, Al and Ag) and semiconductors (Ge, Te and Si) for substrate diameter of 40 cm and target diameter of 5 cm. The nascent sputter flux, the flux of the atoms and their energy arriving at the substrate have been simulated by Monte Carlo codes. A good agreement between previous works of other groups and our simulations for sputter pressures (0.3-1 Pa) and target-substrate distances (8-20 cm) is obtained.

Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

NASA Astrophysics Data System (ADS)

Sagdeo, P. R.; Shinde, D. D.; Misal, J. S.; Kamble, N. M.; Tokas, R. B.; Biswas, A.; Poswal, A. K.; Thakur, S.; Bhattacharyya, D.; Sahoo, N. K.; Sabharwal, S. C.

2010-02-01

Titania-silica (TiO2/SiO2) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser (λ = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer.

PubMed

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-01-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m 2 /g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer

NASA Astrophysics Data System (ADS)

Hong, Sung-Jei; Song, Sang-Hyun; Kim, Byeong Jun; Lee, Jae-Yong; Kim, Young-Sung

2017-09-01

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m2/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

Supported plasma sputtering apparatus for high deposition rate over large area

DOEpatents

Moss, Ronald W.; McClanahan, Jr., Edwin D.; Laegreid, Nils

1977-01-01

A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

NASA Astrophysics Data System (ADS)

Anders, André

2017-05-01

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. By applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become "poisoned," i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

NASA Astrophysics Data System (ADS)

Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

2013-11-01

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Deuterium sputtering of Li and Li-O films

NASA Astrophysics Data System (ADS)

Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

2017-10-01

Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, André

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE PAGES

Anders, André

2017-03-21

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron

Xenon Sputter Yield Measurements for Ion Thruster Materials

NASA Technical Reports Server (NTRS)

Williams, John D.; Gardner, Michael M.; Johnson, Mark L.; Wilbur, Paul J.

2003-01-01

In this paper, we describe a technique that was used to measure total and differential sputter yields of materials important to high specific impulse ion thrusters. The heart of the technique is a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. Differential sputtering yields were generally measured over a full 180 deg arc in a plane that included the beam centerline and the normal vector to the target surface. Sputter yield results are presented for a xenon ion energy range from 0.5 to 10 keV and an angle of incidence range from 0 deg to 70 deg from the target surface normal direction for targets consisting of molybdenum, titanium, solid (Poco) graphite, and flexible graphite (grafoil). Total sputter yields are calculated using a simple integration procedure and comparisons are made to sputter yields obtained from the literature. In general, the agreement between the available data is good. As expected for heavy xenon ions, the differential and total sputter yields are found to be strong functions of angle of incidence. Significant under- and over-cosine behavior is observed at low- and high-ion energies, respectively. In addition, strong differences in differential yield behavior are observed between low-Z targets (C and Ti) and high-Z targets (Mo). Curve fits to the differential sputter yield data are provided. They should prove useful to analysts interested in predicting the erosion profiles of ion thruster components and determining where the erosion products re-deposit.

Three-dimensional particle simulation of back-sputtered carbon in electric propulsion test facility

NASA Astrophysics Data System (ADS)

Zheng, Hongru; Cai, Guobiao; Liu, Lihui; Shang, Shengfei; He, Bijiao

2017-03-01

The back-sputtering deposition on thruster surface caused by ion bombardment on chamber wall material affects the performance of thrusters during the ground based electric propulsion endurance tests. In order to decrease the back-sputtering deposition, most of vacuum chambers applied in electric propulsion experiments are equipped with anti-sputtering targets. In this paper, a three-dimensional model of plume experimental system (PES) including double layer anti-sputtering target is established. Simulation cases are made to simulate the plasma environment and sputtering effects when an ion thruster is working. The particle in cell (PIC) method and direct simulation Monte Carlo (DSMC) method is used to calculate the velocity and position of particles. Yamamura's model is used to simulate the sputtering process. The distribution of sputtered anti-sputtering target material is presented. The results show that the double layer anti-sputtering target can significantly reduce the deposition on thruster surface. The back-sputtering deposition rates on thruster exit surface for different cases are compared. The chevrons on the secondary target are rearranged to improve its performance. The position of secondary target has relation with the ion beam divergence angle, and the radius of the vacuum chamber. The back-sputtering deposition rate is lower when the secondary target covers the entire ion beam.

Sputtering. [as deposition technique in mechanical engineering

NASA Technical Reports Server (NTRS)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Low energy sputtering of cobalt by cesium ions

NASA Technical Reports Server (NTRS)

Handoo, A.; Ray, Pradosh K.

1989-01-01

An experimental facility to investigate low energy (less than 500 eV) sputtering of metal surfaces with ions produced by an ion gun is described. Results are reported on the sputtering yield of cobalt by cesium ions in the 100 to 500 eV energy range at a pressure of 1 times 10(exp -6) Torr. The target was electroplated on a copper substrate. The sputtered atoms were collected on a cobalt foil surrounding the target. Co-57 was used as a tracer to determine the sputtering yield.

Synthesis and microstructure of electrodeposited and sputtered nanotwinned face-centered-cubic metals

DOE PAGES

Bufford, Daniel C.; Wang, Morris; Liu, Yue; ...

2016-04-01

The remarkable properties of nanotwinned (NT) face-centered-cubic (fcc) metals arise directly from twin boundaries, the structures of which can be initially determined by growth twinning during the deposition process. When we understand the synthesis process and its relation to the resulting microstructure, and ultimately to material properties, we realize how key it is to understanding and utilizing these materials. Furthermore, our article presents recent studies on electrodeposition and sputtering methods that produce a high density of nanoscale growth twins in fcc metals. Nanoscale growth twins tend to form spontaneously in monolithic and alloyed fcc metals with lower stacking-fault energies, whilemore » engineered approaches are necessary for fcc metals with higher stacking-fault energies. Finally, growth defects and other microstructural features that influence nanotwin behavior and stability are introduced here, and future challenges in fabricating NT materials are highlighted.« less

Synthesis and microstructure of electrodeposited and sputtered nanotwinned face-centered-cubic metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bufford, Daniel C.; Wang, Morris; Liu, Yue

The remarkable properties of nanotwinned (NT) face-centered-cubic (fcc) metals arise directly from twin boundaries, the structures of which can be initially determined by growth twinning during the deposition process. When we understand the synthesis process and its relation to the resulting microstructure, and ultimately to material properties, we realize how key it is to understanding and utilizing these materials. Furthermore, our article presents recent studies on electrodeposition and sputtering methods that produce a high density of nanoscale growth twins in fcc metals. Nanoscale growth twins tend to form spontaneously in monolithic and alloyed fcc metals with lower stacking-fault energies, whilemore » engineered approaches are necessary for fcc metals with higher stacking-fault energies. Finally, growth defects and other microstructural features that influence nanotwin behavior and stability are introduced here, and future challenges in fabricating NT materials are highlighted.« less

Sputtering erosion in ion and plasma thrusters

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.

1995-01-01

An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

Low-Energy Sputtering Research

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

Ion beam sputtering of Ag - Angular and energetic distributions of sputtered and scattered particles

NASA Astrophysics Data System (ADS)

Feder, René; Bundesmann, Carsten; Neumann, Horst; Rauschenbach, Bernd

2013-12-01

Ion beam sputter deposition (IBD) provides intrinsic features which influence the properties of the growing film, because ion properties and geometrical process conditions generate different energy and spatial distribution of the sputtered and scattered particles. A vacuum deposition chamber is set up to measure the energy and spatial distribution of secondary particles produced by ion beam sputtering of different target materials under variation of geometrical parameters (incidence angle of primary ions and emission angle of secondary particles) and of primary ion beam parameters (ion species and energies).

Method of sputter etching a surface

DOEpatents

Henager, Jr., Charles H.

1984-01-01

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

Sputter deposition for multi-component thin films

DOEpatents

Krauss, A.R.; Auciello, O.

1990-05-08

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Sputter deposition for multi-component thin films

DOEpatents

Krauss, Alan R.; Auciello, Orlando

1990-01-01

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Method of sputter etching a surface

DOEpatents

Henager, C.H. Jr.

1984-02-14

The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

RF Sputtering for preparing substantially pure amorphous silicon monohydride

DOEpatents

Jeffrey, Frank R.; Shanks, Howard R.

1982-10-12

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Magnetron sputtered boron films

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1998-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1998-06-16

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

Collision-spike sputtering of Au nanoparticles

DOE PAGES

Sandoval, Luis; Urbassek, Herbert M.

2015-08-06

Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For the particular case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31 % of the impact energy remains in the nanoparticles after impact; themore » remainder is transported away by the transmitted projectile and the ejecta. As a result, the sputter yield of supported nanoparticles is estimated to be around 80 % of that of free nanoparticles due to the suppression of forward sputtering.« less

Sputtering of rough surfaces: a 3D simulation study

NASA Astrophysics Data System (ADS)

von Toussaint, U.; Mutzke, A.; Manhard, A.

2017-12-01

The lifetime of plasma-facing components is critical for future magnetic confinement fusion power plants. A key process limiting the lifetime of the first-wall is sputtering by energetic ions. To provide a consistent modeling of the sputtering process of realistic geometries, the SDTrimSP-code has been extended to enable the processing of analytic as well as measured arbitrary 3D surface morphologies. The code has been applied to study the effect of varying the impact angle of ions on rough surfaces on the sputter yield as well as the influence of the aspect ratio of surface structures on the 2D distribution of the local sputtering yields. Depending on the surface morphologies reductions of the effective sputter yields to less than 25% have been observed in the simulation results.

Mixed composition materials suitable for vacuum web sputter coating

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Rutledge, Sharon K.; Dever, Joyce A.; Bruckner, Eric J.; Walters, Patricia; Hambourger, Paul D.

1996-01-01

Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

2015-08-01

Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

Heavy particle transport in sputtering systems

NASA Astrophysics Data System (ADS)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

NASA Astrophysics Data System (ADS)

Huo, Chunqing; Lundin, Daniel; Raadu, Michael A.; Anders, André; Tomas Gudmundsson, Jon; Brenning, Nils

2014-04-01

The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current-voltage-time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation \\tilde{\\alpha} of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm-2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm-2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in four steps

RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

NASA Astrophysics Data System (ADS)

Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

2017-08-01

A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

Sputtering Erosion in the Ion Thruster

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.; Mantenieks, Maris A. (Technical Monitor)

2000-01-01

During the first phase of this research, the sputtering yields of molybdenum by low energy (100 eV and higher) xenon ions were measured by using the methods of secondary neutral mass spectrometry (SNMS) and Rutherford backscattering spectrometry (RBS). However, the measured sputtering yields were found to be far too low to explain the sputtering erosions observed in the long-duration tests of ion thrusters. The only difference between the sputtering yield measurement experiments and the ion thruster tests was that the later are conducted at high ion fluences. Hence, a study was initiated to investigate if any linkage exists between high ion fluence and an enhanced sputtering yield. The objective of this research is to gain an understanding of the causes of the discrepancies between the sputtering rates of molybdenum grids in an ion thruster and those measured from our experiments. We are developing a molecular dynamics simulation technique for studying low-energy xenon ion interactions with molybdenum. It is difficult to determine collision sequences analytically for primary ions below the 200 eV energy range where the ion energy is too low to be able to employ a random cascade model with confidence and it is too high to have to consider only single collision at or near the surface. At these low energies, the range of primary ions is about 1 to 2 nm from the surface and it takes less than 4 collisions on the average to get an ion to degrade to such an energy that it can no longer migrate. The fine details of atomic motion during the sputtering process are revealed through computer simulation schemes. By using an appropriate interatomic potential, the positions and velocities of the incident ion together with a sufficient number of target atoms are determined in small time steps. Hence, it allows one to study the evolution of damages in the target and its effect on the sputtering yield. We are at the preliminary stages of setting up the simulation program.

Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

NASA Astrophysics Data System (ADS)

Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Tanaka, Rei; Suda, Yoshiaki

2017-06-01

Tris(8-hydroxyquinolinato)aluminum (Alq3) thin films, for use in organic electroluminescence displays, were prepared by a sputtering deposition method using powder and pressed powder targets. Experimental results suggest that Alq3 thin films can be prepared using powder and pressed powder targets, although the films were amorphous. The surface color of the target after deposition became dark brown, and the Fourier transform infrared spectroscopy spectrum changed when using a pressed powder target. The deposition rate of the film using a powder target was higher than that using a pressed powder target. That may be because the electron and ion densities of the plasma generated using the powder target are higher than those when using pressed powder targets under the same deposition conditions. The properties of a thin film prepared using a powder target were almost the same as those of a film prepared using a pressed powder target.

Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

NASA Astrophysics Data System (ADS)

Komlev, Anton A.; Minzhulina, Ekaterina A.; Smirnov, Vladislav V.; Shapovalov, Viktor I.

2018-01-01

The paper describes physical characteristics of the hot target sputtering process, which have not been known before. To switch a magnetron over to the hot target regime, a titanium disk of 1 mm thick with a 1-mm-gap was attached on a 4-mm-thick copper plate cooled by running water. A thermocouple sensor was used to investigate the thermal processes occurring in substrates. The study was performed at the discharge current density of 20-40 mA/cm2 and argon pressure of 3-7 mTorr. The accuracy of temperature measurement appeared to be within ± 5%, due the application of a chromel-copel thermocouple. The study reveals that under these conditions the heating curves have the inflection points positioned proportionally to the discharge current density and argon pressure on a time axis. The inflection point appears in the kinetic curves due to the finite value of the target heating time constant. The study shows that the substrate fixed temperature and substrate heating time constant depend on the argon pressure and relate to the current density by the polynomials of the first and second degrees, respectively. The influence of a target on the substrate heating kinetics is considered in an analytical description by the introduction of a multiplier in the form of an exponential function of time. The results of the research make a novel contribution to the field of the sputtering process.

Simple model of surface roughness for binary collision sputtering simulations

NASA Astrophysics Data System (ADS)

Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2017-02-01

It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

A new setup for experimental investigations of solar wind sputtering

NASA Astrophysics Data System (ADS)

Szabo, Paul S.; Berger, Bernhard M.; Chiba, Rimpei; Stadlmayr, Reinhard; Aumayr, Friedrich

2017-04-01

The surfaces of Mercury and Moon are not shielded by a thick atmosphere and therefore they are exposed to bombardment by charged particles, ultraviolet photons and micrometeorites. These influences lead to an alteration and erosion of the surface, and the emitted atoms and molecules form a thin atmosphere, an exosphere, around these celestial bodies [1]. The composition of these exospheres is connected to the surface composition and has been subject to flyby measurements by satellites. Model calculations which include the erosion mechanisms can be used as a method of comparison for such exosphere measurements and allow conclusions about the surface composition. Surface sputtering induced by solar wind ions hereby represents a major contribution to the erosion of the surfaces of Mercury and Moon [1]. However, the experimental database for sputtering of respective analogue materials by solar wind ions, which would be necessary for exact modelling of the space weathering process, is still in its early stages. Sputtering experiments have been performed at TU Wien during the past years using a quartz crystal microbalance (QCM) technique [2]. Target material is deposited on the quartz surface as a thin layer and the quartz's resonance frequency is measured under ion bombardment. The sputter yield can then be calculated from the frequency change and the ion current [2]. In order to remove the restrictions of a thin layer QCM target and simplify experiments with composite targets, a new QCM catcher setup was developed. In the new design, the QCM is placed beside the target holder and acts as a catcher for material that is sputtered from the target surface. By comparing the catcher signal to reference measurements and SDTrimSP simulations [3], the target sputter yield can be determined. In order to test the setup, we have performed experiments with a Au-coated QCM target under 2 keV Ar+ bombardment so that both the mass changes at the target and at the catcher could be

In-situ sputtering apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.

A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and amore » cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.« less

Solar Wind Sputtering of Lunar Surface Materials: Role and Some Possible Implications of Potential Sputtering

NASA Technical Reports Server (NTRS)

Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Reinhold, c.

2010-01-01

Solar-wind induced sputtering of the lunar surface includes, in principle, both kinetic and potential sputtering. The role of the latter mechanism, however, in many focused studies has not been properly ascertained due partly to lack of data but can also be attributed to the assertion that the contribution of solar-wind heavy ions to the total sputtering is quite low due to their low number density compared to solar-wind protons. Limited laboratory measurements show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. Lunar surface sputtering yields are important as they affect, e.g., estimates of the compositional changes in the lunar surface, its erosion rate, as well as its contribution to the exosphere as well as estimates of hydrogen and water contents. Since the typical range of solar-wind ions at 1 keV/amu is comparable to the thickness of the amorphous rim found on lunar soil grains, i.e. few 10s nm, lunar simulant samples JSC-1A AGGL are specifically enhanced to have such rims in addition to the other known characteristics of the actual lunar soil particles. However, most, if not all laboratory studies of potential sputtering were carried out in single crystal targets, quite different from the rim s amorphous structure. The effect of this structural difference on the extent of potential sputtering has not, to our knowledge, been investigated to date.

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

Development of RF sputtered chromium oxide coating for wear application

NASA Technical Reports Server (NTRS)

Bhushan, B.

1979-01-01

The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

Particle-in-Cell Modeling of Magnetron Sputtering Devices

NASA Astrophysics Data System (ADS)

Cary, John R.; Jenkins, T. G.; Crossette, N.; Stoltz, Peter H.; McGugan, J. M.

2017-10-01

In magnetron sputtering devices, ions arising from the interaction of magnetically trapped electrons with neutral background gas are accelerated via a negative voltage bias to strike a target cathode. Neutral atoms ejected from the target by such collisions then condense on neighboring material surfaces to form a thin coating of target material; a variety of industrial applications which require thin surface coatings are enabled by this plasma vapor deposition technique. In this poster we discuss efforts to simulate various magnetron sputtering devices using the Vorpal PIC code in 2D axisymmetric cylindrical geometry. Field solves are fully self-consistent, and discrete models for sputtering, secondary electron emission, and Monte Carlo collisions are included in the simulations. In addition, the simulated device can be coupled to an external feedback circuit. Erosion/deposition profiles and steady-state plasma parameters are obtained, and modifications due to self consistency are seen. Computational performance issues are also discussed. and Tech-X Corporation.

A comparative study on NbOx films reactively sputtered from sintered and cold gas sprayed targets

NASA Astrophysics Data System (ADS)

Lorenz, Roland; O'Sullivan, Michael; Fian, Alexander; Sprenger, Dietmar; Lang, Bernhard; Mitterer, Christian

2018-04-01

The aim of this work is to evaluate novel cold gas sprayed Nb targets in a reactive sputter deposition process of thin films with respect to the widely used sintered Nb targets. With the exception of a higher target discharge voltage of ∼100 V for the cold gas sprayed targets and the thus higher film growth rate compared to sintered targets, NbOx films with comparable microstructure and properties were obtained for both target variants. The amorphous films with thicknesses between 2.9 and 4.9 μm present an optical shift from dark and non-transparent towards transparent properties, as the oxygen partial pressure increases. X-ray photoelectron spectroscopy confirms the occurrence of the Nb5+ oxidation state for the highest oxygen partial pressure, while Nb4+ is additionally present at lower oxygen partial pressure settings. With a maximal transparency of ∼80% and a refractive index of ∼2.5, the transparent films show characteristics similar to Nb2O5.

Note on the artefacts in SRIM simulation of sputtering

NASA Astrophysics Data System (ADS)

Shulga, V. I.

2018-05-01

The computer simulation program SRIM, unlike other well-known programs (MARLOWE, TRIM.SP, etc.), predicts non-zero values of the sputter yield at glancing ion bombardment of smooth amorphous targets and, for heavy ions, greatly underestimates the sputter yield at normal incidence. To understand the reasons for this, the sputtering of amorphous silicon bombarded with different ions was modeled here using the author's program OKSANA. Most simulations refer to 1 keV Xe ions, and angles of incidence cover range from 0 (normal incidence) to almost 90°. It has been shown that SRIM improperly simulates the initial stage of the sputtering process. Some other artefacts in SRIM calculations of sputtering are also revealed and discussed.

Effect of the target power density on high-power impulse magnetron sputtering of copper

NASA Astrophysics Data System (ADS)

Kozák, Tomáš

2012-04-01

We present a model analysis of high-power impulse magnetron sputtering of copper. We use a non-stationary global model based on the particle and energy conservation equations in two zones (the high density plasma ring above the target racetrack and the bulk plasma region), which makes it possible to calculate time evolutions of the averaged process gas and target material neutral and ion densities, as well as the fluxes of these particles to the target and substrate during a pulse period. We study the effect of the increasing target power density under conditions corresponding to a real experimental system. The calculated target current waveforms show a long steady state and are in good agreement with the experimental results. For an increasing target power density, an analysis of the particle densities shows a gradual transition to a metal dominated discharge plasma with an increasing degree of ionization of the depositing flux. The average fraction of target material ions in the total ion flux onto the substrate is more than 90% for average target power densities higher than 500 W cm-2 in a pulse. The average ionized fraction of target material atoms in the flux onto the substrate reaches 80% for a maximum average target power density of 3 kW cm-2 in a pulse.

RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

DOEpatents

Jeffery, F.R.; Shanks, H.R.

1980-08-26

A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

Frictional and morphological properties of Au-MoS2 films sputtered from a compact target

NASA Technical Reports Server (NTRS)

Spalvins, T.

1984-01-01

AuMoS2 films 0.02 to 1.2 microns thick were sputtered from target compacted from 5 wt % Au + 95 wt % MoS2, to investigate the frictional and morphological film growth characteristics. The gold dispersion effects in MoS2 films are of interest to increase the densitification and strengthening of the film structure. Three microstructural growth stages were identified on the nano-micro-macrostructural level. During sliding both sputtered Au-MoS2 and MoS2 films have a tendency to break within the columner region. The remaining or effective film, about 0.2 microns thick, performs the lubrication. The Au-MoS2 films displayed a lower friction coefficient with a high degree of frictional stability and less wear debris generation as compared to pure MoS2 films. The more favorable frictional characteristics of the Au-MoS2 films are attributed to the effective film thickness and the high density packed columner zone which has a reduced effect on the fragmentation of the tapered crystallites during fracture.

Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe 2 thin films using one-step sputtering

DOE PAGES

Park, Jae -Cheol; Al-Jassim, Mowafak; Kim, Tae -Won

2017-02-01

Here, copper gallium selenide (CGS) thin films were fabricated using a combinatorial one-step sputtering process without an additional selenization process. The sample libraries as a function of vertical and lateral distance from the sputtering target were synthesized on a single soda-lime glass substrate at the substrate temperature of 500 °C employing a stoichiometric CGS single target. As we increased the vertical distance between the target and substrate, the CGS thin films had more stable and uniform characteristics in structural and chemical properties. Under the optimized conditions of the vertical distance (150 mm), the CGS thin films showed densely packed grainsmore » and large grain sizes up to 1 μm in scale with decreasing lateral distances. The composition ratio of Ga/[Cu+Ga] and Se/[Cu+Ga] showed 0.50 and 0.93, respectively, in nearly the same composition as the sputtering target. X-ray diffraction and Raman spectroscopy revealed that the CGS thin films had a pure chalcopyrite phase without any secondary phases such as Cu–Se or ordered vacancy compounds, respectively. In addition, we found that the optical bandgap energies of the CGS thin films are shifted from 1.650 to 1.664 eV with decreasing lateral distance, showing a near-stoichiometric region with chalcopyrite characteristics.« less

Elementary surface processes during reactive magnetron sputtering of chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von

2015-10-07

The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidationmore » sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.« less

Very low pressure high power impulse triggered magnetron sputtering

DOEpatents

Anders, Andre; Andersson, Joakim

2013-10-29

A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

Phase separation in NiCrN coatings induced by N2 addition in the gas phase: A way to generate magnetic thin films by reactive sputtering of a non-magnetic NiCr target

NASA Astrophysics Data System (ADS)

Luciu, I.; Duday, D.; Choquet, P.; Perigo, E. A.; Michels, A.; Wirtz, T.

2016-12-01

Magnetic coatings are used for a lot of applications from data storage in hard discs, spintronics and sensors. Meanwhile, magnetron sputtering is a process largely used in industry for the deposition of thin films. Unfortunately, deposition of magnetic coatings by magnetron sputtering is a difficult task due to the screening effect of the magnetic target lowering the magnetic field strength of the magnet positioned below the target, which is used to generate and trap ions in the vicinity of the target surface to be sputtered. In this work we present an efficient method to obtain soft magnetic thin films by reactive sputtering of a non-magnetic target. The aim is to recover the magnetic properties of Ni after dealloying of Ni and Cr due to the selective reactivity of Cr with the reactive nitrogen species generated during the deposition process. The effects of nitrogen content on the dealloying and DC magnetron sputtering (DCMS) deposition processes are studied here. The different chemical compositions, microstructures and magnetic properties of DCMS thin films obtained by sputtering in reactive gas mixtures with different ratios of Ar/N2 from a non-magnetic Ni-20Cr target have been determined. XPS data indicate that the increase of nitrogen content in the films has a strong influence on the NiCr phase decomposition into Ni and CrN, leading to ferromagnetic coatings due to the Ni phase. XRD results show that the obtained Ni-CrN films consist of a metallic fcc cubic Ni phase mixed with fcc cubic CrN. The lattice parameter decreases with the N2 content and reaches the theoretical value of the pure fcc-Ni, when Cr is mostly removed from the Ni-Cr phase. Dealloying of Cr from a Ni80-Cr20 solid solution is achieved in our experimental conditions and the deposition of Ni ferromagnetic coatings embedding CrN from a non-magnetic target is possible with reactive DC magnetron sputtering.

Deposition of reactively ion beam sputtered silicon nitride coatings

NASA Technical Reports Server (NTRS)

Grill, A.

1982-01-01

An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

MgAl{sub 2}O{sub 4}(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belmoubarik, Mohamed; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu

We developed a fabrication process of an epitaxial MgAl{sub 2}O{sub 4} barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl{sub 2}O{sub 4} spinel sintered target. Annealing the sputter-deposited MgAl{sub 2}O{sub 4} layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297 K (436% at 3 K) was achieved in the Fe/MgAl{sub 2}O{sub 4}/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative methodmore » for the realization of high performance MTJs with a spinel-based tunnel barrier.« less

Reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Magnus, F.; Tryggvason, T. K.; Sveinsson, O. B.; Olafsson, S.

2012-10-01

Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) [1] of Ti target in an Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage. The discharge current increases with decreasing frequency or voltage. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 ^oC. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4].[4pt] [1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)[0pt] [2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)[0pt] [3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., submitted 2012[0pt] [4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., accepted 2012

Discharge current modes of high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Zhongzhen, E-mail: wuzz@pkusz.edu.cn; Xiao, Shu; Ma, Zhengyong

2015-09-15

Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

Correlation of process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target

NASA Astrophysics Data System (ADS)

Bundesmann, Carsten; Lautenschläge, Thomas; Spemann, Daniel; Finzel, Annemarie; Mensing, Michael; Frost, Frank

2017-10-01

The correlation between process parameters and properties of TiO2 films grown by ion beam sputter deposition from a ceramic target was investigated. TiO2 films were grown under systematic variation of ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, polar emission angle) and characterized with respect to film thickness, growth rate, structural properties, surface topography, composition, optical properties, and mass density. Systematic variations of film properties with the scattering geometry, namely the scattering angle, have been revealed. There are also considerable differences in film properties when changing the process gas from Ar to Xe. Similar systematics were reported for TiO2 films grown by reactive ion beam sputter deposition from a metal target [C. Bundesmann et al., Appl. Surf. Sci. 421, 331 (2017)]. However, there are some deviations from the previously reported data, for instance, in growth rate, mass density and optical properties.

Thermochromic VO2 Films Deposited by RF Magnetron Sputtering Using V2O3 or V2O5 Targets

NASA Astrophysics Data System (ADS)

Shigesato, Yuzo; Enomoto, Mikiko; Odaka, Hidehumi

2000-10-01

Thermochromic monoclinic-tetragonal VO2 films were successfully deposited on glass substrates with high reproducibility by rf magnetron sputtering using V2O3 or V2O5 targets. In the case of reactive sputtering using a V-metal target, the VO2 films could be obtained only under the very narrow deposition conditions of the “transition region” where the deposition rate decreases drastically with increasing oxygen gas flow rate. In the case of a V2O3 target, polycrystalline VO2 films with a thickness of 400 to 500 nm were obtained by the introduction of oxygen gas [O2/(Ar+O2)=1--1.5%], whereas hydrogen gas [H2/(Ar+H2)=2.5--10%] was introduced in the case of a V2O5 target. Furthermore, the VO2 films were successfully grown heteroepitaxially on a single-crystal sapphire [α-Al2O3(001)] substrate, where the epitaxial relationship was confirmed to be VO2(010)[100]\\parallelAl2O3(001)[100], [010], [\\bar{1}\\bar{1}0] by an X-ray diffraction pole figure measurement. The resistivity ratio between semiconductor and metal phases for the heteroepitaxial VO2 films was much larger than the ratio of the polycrystalline films on glass substrates under the same deposition conditions.

Isotopic Enrichment of Boron in the Sputtering of Boron Nitride with Xenon Ions

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1998-01-01

An experimental study is described to measure the isotopic enrichment of boron. Xenon ions from 100 eV to 1.5 keV were used to sputter a boron nitride target. An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 microA/sq cm. Xenon ions impinged on the target surface at 50 deg angle to the surface normal. Since boron nitride is an insulator, a flood electron gun was used in our experiments to neutralize the positive charge buildup on the target surface. The sputtered secondary ions of boron were detected by a quadrupole mass spectrometer. The spectrometer entrance aperture was located perpendicular to the ion beam direction and 10 mm away from the target surface. The secondary ion flux was observed to be enriched in the heavy isotopes at lower ion energies. The proportion of heavy isotopes in the sputtered secondary ion flux was found to decrease with increasing primary ion energy from 100 to 350 eV. Beyond 350 eV, light isotopes were sputtered preferentially. The light isotope enrichment factor was observed to reach an asymptotic value of 1.27 at 1.5 keV. This trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

Transmission sputtering under diatomic molecule bombardment. Model calculations

NASA Astrophysics Data System (ADS)

Bitensky, I. S.

1996-04-01

Transmission sputtering means that emission of secondary particles is studied from the downstream side of a bombarded foil. Nonlinear effects in sputtering manifest themselves as a deviation of sputtering yield under molecular ion bombardment from the sum of the yields induced by the constituents at the same velocity. In the reflection geometry the overlap of the spike regions reaches maximum, while in transmission the degree of overlap depends on the projectile and on the foil thickness. It has been shown that the transmission sputtering yield can be described by a function of a scaling parameter determined by beam-foil characteristics and a mechanism of nonlinear sputtering. Calculations of the transmission yield have been made in the thermal spike and shock wave models. The results of calculations are compared with experimental data on phenylalanine molecular ion desorption from organic targets induced by Au + and Au 2+ impact. Suggestions for further experimental study are made.

Coating multilayer material with improved tribological properties obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Mateescu, A. O.; Mateescu, G.; Balasoiu, M.; Pompilian, G. O.; Lungu, M.

2017-02-01

This work is based on the Patent no. RO 128094 B1, granted by the Romanian State Office for Inventions and Trademarks. The goal of the work is to obtain for investigations tribological coatings with multilayer structure with improved tribological properties, deposited by magnetron sputtering process from three materials (sputtering targets). Starting from compound chemical materials (TiC, TiB2 and WC), as sputtering targets, by deposition in argon atmosphere on polished stainless steel, we have obtained, based on the claims of the above patent, thin films of multilayer design with promising results regarding their hardness, elastic modulus, adherence, coefficient of friction and wear resistance. The sputtering process took place in a special sequence in order to ensure better tribological properties to the coating, comparing to those of the individual component materials. The tribological properties, such as the coefficient of friction, are evaluated using the tribometer test.

Low-Energy Sputtering Studies of Boron Nitride with Xenon Ions

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

Sputtering of boron nitride with xenon ions was investigated using secondary ion (SIMS) and secondary neutral (SNMS) mass spectrometry. The ions generated from the ion gun were incident on the target at an angle of 50' with respect to the surface'normal. The energy of ions ranged from 100 eV to 3 keV. A flood electron gun was used to neutralize the positive charge build-up on the target surface. The intensities of sputtered neutral and charged particles, including single atoms, molecules, and clusters, were measured as a function of ion energy. Positive SIMS spectra were dominated by the two boron isotopes whereas BN- and B- were the two major constituents of the negative SIMS spectra. Nitrogen could be detected only in the SNMS spectra. The intensity-energy curves of the sputtered particles were similar in shape. The knees in P-SIMS and SNMS intensity-energy curves appear at around I keV which is significantly higher that 100 to 200 eV energy range at which knees appear in the sputtering of medium and heavy elements by ions of argon and xenon. This difference in the position of the sputter yield knee between boron nitride and heavier targets is due to the reduced ion energy differences. The isotopic composition of secondary ions of boron were measured by bombarding boron nitride with xenon ions at energies ranging from 100 eV to 1.5 keV using a quadrupole mass spectrometer. An ion gun was used to generate the ion beam. A flood electron gun was used to neutralize the positive charge buildup on the target surface. The secondary ion flux was found to be enriched in heavy isotopes at lower incident ion energies. The heavy isotope enrichment was observed to decrease with increasing primary ion energy. Beyond 350 eV, light isotopes were sputtered preferentially with the enrichment increasing to an asymptotic value of 1.27 at 1.5 keV. The trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy

Investigation of high power impulse magnetron sputtering (HIPIMS) discharge using fast ICCD camera

NASA Astrophysics Data System (ADS)

Hecimovic, Ante

2012-10-01

High power impulse magnetron sputtering (HIPIMS) combines impulse glow discharges at power levels up to the MW range with conventional magnetron cathodes to achieve a highly ionised sputtered flux. The dynamics of the HIPIMS discharge was investigated using fast Intensified Charge Coupled Device (ICCD) camera. In the first experiment the HIPIMS plasma was recorded from the side with goal to analyse the plasma intensity using Abel inversion to obtain the emissivity maps of the plasma species. Resulting emissivity maps provide the information on the spatial distribution of Ar and sputtered material and evolution of the plasma chemistry above the cathode. In the second experiment the plasma emission was recorded with camera facing the target. The images show that the HIPIMS plasma develops drift wave type instabilities characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron. The instabilities cause periodic shifts in the floating potential. The structures rotate in ExB direction at velocities of 10 kms-1 and frequencies up to 200 kHz. The high emissivity regions comprise Ar and metal ion emission with strong Ar and metal neutral emission depletion. A detailed analysis of the temporal evolution of the saturated instabilities using four consequently triggered fast ICCD cameras is presented. Furthermore working gas pressure and discharge current variation showed that the shape and the speed of the instability strongly depend on the working gas and target material combination. In order to better understand the mechanism of the instability, different optical interference band pass filters (of metal and gas atom, and ion lines) were used to observe the spatial distribution of each species within the instability.

Method for sputtering with low frequency alternating current

DOEpatents

Timberlake, John R.

1996-01-01

Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

Method for sputtering with low frequency alternating current

DOEpatents

Timberlake, J.R.

1996-04-30

Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1993-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1995-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1993-04-20

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1995-02-14

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

A model for sputtering from solid surfaces bombarded by energetic clusters

NASA Astrophysics Data System (ADS)

Benguerba, Messaoud

2018-04-01

A model is developed to explain and predict the sputtering from solid surfaces bombarded by energetic clusters, on the basis of shock wave generated at the impact of cluster. Under the shock compression the temperature increases causing the vaporization of material that requires an internal energy behind the shock, at least, of about twice the cohesive energy of target. The sputtering is treated as a gas of vaporized particles from a hemispherical volume behind the shock front. The sputter yield per cluster atoms is given as a universal function depending on the ratio of target to cluster atomic density and the ratio of cluster velocity to the velocity calculated on the basis of an internal energy equals about twice cohesive energy. The predictions of the model for self sputter yield of copper, gold, tungsten and of silver bombarded by C60 clusters agree well, with the corresponding data simulated by molecular dynamics.

Using the Multipole Resonance Probe to Stabilize the Electron Density During a Reactive Sputter Process

NASA Astrophysics Data System (ADS)

Oberberg, Moritz; Styrnoll, Tim; Ries, Stefan; Bienholz, Stefan; Awakowicz, Peter

2015-09-01

Reactive sputter processes are used for the deposition of hard, wear-resistant and non-corrosive ceramic layers such as aluminum oxide (Al2O3) . A well known problem is target poisoning at high reactive gas flows, which results from the reaction of the reactive gas with the metal target. Consequently, the sputter rate decreases and secondary electron emission increases. Both parameters show a non-linear hysteresis behavior as a function of the reactive gas flow and this leads to process instabilities. This work presents a new control method of Al2O3 deposition in a multiple frequency CCP (MFCCP) based on plasma parameters. Until today, process controls use parameters such as spectral line intensities of sputtered metal as an indicator for the sputter rate. A coupling between plasma and substrate is not considered. The control system in this work uses a new plasma diagnostic method: The multipole resonance probe (MRP) measures plasma parameters such as electron density by analyzing a typical resonance frequency of the system response. This concept combines target processes and plasma effects and directly controls the sputter source instead of the resulting target parameters.

Ultra-hard amorphous AlMgB14 films RF sputtered onto curved substrates

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Putrolaynen, V. V.; Yuzvyuk, M. H.

2017-03-01

Recently, hard AlMgB14 (BAM) coatings were deposited for the first time by RF magnetron sputtering using a single stoichiometric ceramic target. High target sputtering power and sufficiently short target-to-substrate distance were found to be critical processing conditions. They enabled fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth in 2 µm thick film (Grishin et al 2014 JETP Lett. 100 680). The narrow range of sufficiently short target-to-substrate distance makes impossible to coat non flat specimens. To achieve ultimate BAM films’ characteristics onto curved surfaces we developed two-step sputtering process. The first thin layer is deposited as a template at low RF power that facilitates a layered Frank van der Merwe mode growth of smooth film occurs. The next layer is grown at high RF target sputtering power. The affinity of subsequent flow of sputtered atoms to already evenly condensed template fosters the development of smooth film surface. As an example, we made BAM coating onto hemispherical 5 mm in diameter ball made from a hard tool steel and used as a head of a special gauge. Very smooth (6.6 nm RMS surface roughness) and hard AlMgB14 films fabricated onto commercial ball-shaped items enhance hardness of tool steel specimens by a factor of four.

Characterization of high power impulse magnetron sputtering discharges

NASA Astrophysics Data System (ADS)

Hala, Matej

Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

Composition of RF-sputtered refractory compounds determined by X-ray photoelectron spectroscopy

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1978-01-01

RF-sputtered coatings of CrB2, MoSi2, Mo2C, TiC, and MoS2 were examined by X-ray photoelectron spectroscopy (XPS). Data on stoichiometry, impurity content, and chemical bonding were obtained. The influences of sputtering target history, deposition time, RF power level, and substrate bias were studied. Significant deviations from stoichiometry and high oxide levels were related to target outgassing. The effect of substrate bias depended on the particular coating material studied.

Copper deposition on fabrics by rf plasma sputtering for medical applications

NASA Astrophysics Data System (ADS)

Segura, G.; Guzmán, P.; Zuñiga, P.; Chaves, S.; Barrantes, Y.; Navarro, G.; Asenjo, J.; Guadamuz Vargas, S., VI; Chaves, J.

2015-03-01

The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10-2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms.

Origin of the butterfly-shaped magnetoresistance in reactive sputtered epitaxial Fe{sub 3}O{sub 4} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, P.; Zhang, L. T.; Mi, W. B.

2009-08-01

Epitaxial Fe{sub 3}O{sub 4} thin films were synthesized by facing-target reactive sputtering Fe targets. The epitaxy of the Fe{sub 3}O{sub 4} film on MgO (100) was examined macroscopically using x-ray diffraction, including conventional theta-2theta scan, tilting 2theta scan, phi scan, and pole figure. The observed low-field butterfly-shaped magnetoresistance (MR) are explained by the primary fast rotation of the spins far away from antiphase boundaries and the high-field MR changing linearly with magnetic field can be understood by the gradual rotation of the spins near the antiphase boundaries. It is magnetocrystalline anisotropy that causes an increase in MR below Verwey transitionmore » temperature.« less

Sputtering Erosion in Ion and Plasma Thrusters

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.

1996-01-01

Low energy sputtering of molybdenum, tantalum and boron nitride with xenon ions are being studied using secondary neutral and secondary ion mass spectrometry (SNMS/SIMS). An ultrahigh vacuum chamber was used to conduct the experiment at a base pressure of 1x10(exp -9) torr. The primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a spot size of approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and 90 deg to the primary ion beam direction. SNMS and SIMS spectra were collected at various incident angles and different ion energies. For boron nitride sputtering, the target was flooded with an electron beam to neutralize the charge buildup on the surface. In the SNMS mode, sputtering of Mo and Ta can be detected at an ion energy as low as 100 eV whereas in boron nitride the same was observed up to an energy of 300 eV. However, in the positive-SIMS mode, the sputtering of Mo was observed at 10 eV incident ion energy. The SIMS spectra obtained for boron nitride clearly identifies the two isotopes of boron as well as cluster ions such as B2(sup +) and molecular ions such as BN(sup +). From the angle versus yields measurements, it was found that the maximum SNMS yield shifts towards lower incident angles at low ion energies for all three samples.

Preparation and study of Titanium Nitride films by reactive sputtering and an investigation of target poisoning during the process

NASA Astrophysics Data System (ADS)

Aziz, Tareque; Rumaiz, Abdul

Titanium Nitride (TiNx) thin films were prepared by reactive dc sputtering in presence of Ar-N2 plasma. The thin films were grown on Quartz and pure Si surfaces. The Ar-N2 content ratio was gradually varied while the substrate and the Titanium target were kept at room temperature. Structural properties, optical and electrical properties of the thin films were studied by using X-ray Photoelectron Spectroscopy (XPS) and XRD and 4 probe resistivity measurement. Target poisoning of the Ti target was also studied by varying reactive gas concentration and measuring the target current. A study of target current vs growth rate of the films was performed to investigate the onset of ``poison'' mode.Although there was an insignificant drop in plasma current, we noticed a drop in the deposition rate. This result was tested against Monte Carlo simulations using SRIM simulations. Effects of annealing on the crystallinity and the sheet resistance will also be discussed. The work has been supported by BSA,DOE.

Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

NASA Astrophysics Data System (ADS)

Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

2009-03-01

The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 < x < 0.92) thin films made by radiofrequency (13.56 MHz) cathodic magnetron sputtering from composite Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

A thermalized ion explosion model for high energy sputtering and track registration

NASA Technical Reports Server (NTRS)

Seiberling, L. E.; Griffith, J. E.; Tombrello, T. A.

1980-01-01

A velocity spectrum of neutral sputtered particles as well as a low resolution mass spectrum of sputtered molecular ions was measured for 4.74 MeV F-19(+2) incident of UF4. The velocity spectrum is dramatically different from spectra taken with low energy (keV) bombarding ions, and is shown to be consistent with a hot plasma of atoms in thermal equilibrium inside the target. A thermalized ion explosion model is proposed for high energy sputtering which is expected to describe track formation in dielectric materials. The model is shown to be consistent with the observed total sputtering yield and the dependence of the yield on the primary ionization rate of the incident ion.

Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

NASA Astrophysics Data System (ADS)

Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

2017-05-01

The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

Structure, mechanical and tribological properties of TiSiC films deposited by magnetron sputtering segment target

NASA Astrophysics Data System (ADS)

Jiang, Jinlong; He, Kaichen; He, XingXing; Huang, Hao; Pang, Xianjuan; Wei, Zhiqiang

2017-12-01

In this work, the TiSiC films were deposited by magnetron sputtering segment target with various areal ratio of Ti80Si20 to C. The effects of segment target component on the structure, mechanical and tribological properties of the films were investigated. The results revealed that the deposited films exhibited a structural transform from a cubic TiC structure to a nanocomposite structure with nanocrystalline TiC in a-C:Si matrix, and finally x-ray amorphous structures with decreasing areal ratio of Ti80Si20 to C. The TiSiC film deposited at the Ti80Si20:C areal ratio of 7:7 showed superior mechanical and tribological properties such as high hardness (18.6 Gpa), good scratch resistant (46 N), low friction coefficient (0.2) and low wear rate (8.6  ×  10-7 mm3 Nm-1), which suggests that it is a promising candidate for the protective films.

Rarefaction windows in a high-power impulse magnetron sputtering plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmucci, Maria; Britun, Nikolay; Konstantinidis, Stephanos

2013-09-21

The velocity distribution function of the sputtered particles in the direction parallel to the planar magnetron cathode is studied by spatially- and time-resolved laser-induced fluorescence spectroscopy in a short-duration (20 μs) high-power impulse magnetron sputtering discharge. The experimental evidence for the neutral and ionized sputtered particles to have a constant (saturated) velocity at the end of the plasma on-time is demonstrated. The velocity component parallel to the target surface reaches the values of about 5 km/s for Ti atoms and ions, which is higher that the values typically measured in the direct current sputtering discharges before. The results point outmore » on the presence of a strong gas rarefaction significantly reducing the sputtered particles energy dissipation during a certain time interval at the end of the plasma pulse, referred to as “rarefaction window” in this work. The obtained results agree with and essentially clarify the dynamics of HiPIMS discharge studied during the plasma off-time previously in the work: N. Britun, Appl. Phys. Lett. 99, 131504 (2011)« less

Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, W. F.; Institute of Materials Research and Engineering, Agency for Science, Technology and Research; Liu, Z. G.

2013-03-18

Al-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (T{sub G}) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high T{sub G}, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T{sub G}, and is associated withmore » conduction-band filling up to 1.13 eV due to the Burstein-Moss effect.« less

Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

NASA Astrophysics Data System (ADS)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source

NASA Astrophysics Data System (ADS)

Lackner, Peter; Choi, Joong Il Jake; Diebold, Ulrike; Schmid, Michael

2017-10-01

A sputter deposition source for the use in ultrahigh vacuum (UHV) is described, and some properties of the source are analyzed. The operating principle is based on the design developed by Mayr et al. [Rev. Sci. Instrum. 84, 094103 (2013)], where electrons emitted from a filament ionize argon gas and the Ar+ ions are accelerated to the target. In contrast to the original design, two grids are used to direct a large fraction of the Ar+ ions to the target, and the source has a housing cooled by liquid nitrogen to reduce contaminations. The source has been used for the deposition of zirconium, a material that is difficult to evaporate in standard UHV evaporators. At an Ar pressure of 9 ×1 0-6 mbar in the UHV chamber and moderate emission current, a highly reproducible deposition rate of ≈1 ML in 250 s was achieved at the substrate (at a distance of ≈50 mm from the target). Higher deposition rates are easily possible. X-ray photoelectron spectroscopy shows a high purity of the deposited films. Depending on the grid voltages, the substrate gets mildly sputtered by Ar+ ions; in addition, the substrate is also reached by electrons from the negatively biased sputter target.

Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, H.S., E-mail: 160184@mail.csc.com.tw; Chiu, C.H.; Hong, I.T.

2013-09-15

Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes,more » which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.« less

Sputtering and ion plating

NASA Technical Reports Server (NTRS)

1972-01-01

The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

2016-09-01

Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

NASA Astrophysics Data System (ADS)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-11-01

O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

An experimental investigation of fractionation by sputter deposition. [application to solar wind irradiation of lunar soil

NASA Technical Reports Server (NTRS)

Paruso, D. M.; Cassidy, W. A.; Hapke, B. W.

1978-01-01

Artificial glass targets composed of elements varying widely in atomic weight were irradiated at an angle of incidence of 45 deg by 2-keV hydrogen ions at a current density of .33 mA/sq cm, and sputtered atoms were caught on a molybdenum film. Analyses of the sputter-deposited films and unsputtered target glasses were carried out by electron microprobe. The backward-sputtered component was found to be enriched in elements of low atomic weight, while the forward-sputtered component was enriched in heavy atoms. These results indicate that at the lunar surface lighter elements and isotopes would tend to be ejected in backward directions, escaping directly through the openings which admit bombarding ions without first striking an adjacent grain surface; heavy elements and isotopes would be forward-sputtered deeper into the soil and be preferentially retained, contributing to the reported enrichments of heavy elements and isotopes. Additional results show that the binding energy of an element in its oxide form influences the sticking coefficient of a sputtered atom; elements of low binding energy are likely to desorb, while elements of high binding energy tend to stick to the first bounce surface.

Direct current sputtering of boron from boron/boron mixtures

DOEpatents

Timberlake, J.R.; Manos, D.; Nartowitz, E.

1994-12-13

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod. 2 figures.

Direct current sputtering of boron from boron/coron mixtures

DOEpatents

Timberlake, John R.; Manos, Dennis; Nartowitz, Ed

1994-01-01

A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod.

The first laboratory measurements of sulfur ions sputtering water ice

NASA Astrophysics Data System (ADS)

Galli, André; Pommerol, Antoine; Vorburger, Audrey; Wurz, Peter; Tulej, Marek; Scheer, Jürgen; Thomas, Nicolas; Wieser, Martin; Barabash, Stas

2015-04-01

The upcoming JUpiter ICy moons Explorer mission to Europa, Ganymede, and Callisto has renewed the interest in the interaction of plasma with an icy surface. In particular, the surface release processes on which exosphere models of icy moons rely should be tested with realistic laboratory experiments. We therefore use an existing laboratory facility for space hardware calibration in vacuum to measure the sputtering of water ice due to hydrogen, oxygen, and sulfur ions at energies from 1 keV to 100 keV. Pressure and temperature are comparable to surface conditions encountered on Jupiter's icy moons. The sputter target is a 1cm deep layer of porous, salty water ice. Our results confirm theoretical predictions that the sputter yield from oxygen and sulfur ions should be similar. Thanks to the modular set-up of our experiment we can add further surface processes relevant for icy moons, such as electron sputtering, sublimation, and photodesorption due to UV light.

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

NASA Astrophysics Data System (ADS)

Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.

2016-06-01

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

Metal copper films deposited on cenosphere particles by magnetron sputtering method

NASA Astrophysics Data System (ADS)

Yu, Xiaozheng; Xu, Zheng; Shen, Zhigang

2007-05-01

Metal copper films with thicknesses from several nanometres to several micrometres were deposited on the surface of cenosphere particles by the magnetron sputtering method under different working conditions. An ultrasonic vibrating generator equipped with a conventional magnetron sputtering apparatus was used to prevent the cenosphere substrates from accumulating during film growth. The surface morphology, the chemical composition, the average grain size and the crystallization of cenosphere particles were characterized by field emission scanning electron microscopy (FE-SEM), inductively coupled plasma-atom emission spectrometer, x-ray photoelectron spectroscopy and x-ray diffraction (XRD) analysis, respectively, before and after the plating process. The results indicate that the copper films were successfully deposited on cenosphere particles. It was found from the FE-SEM results that the films were well compacted and highly uniform in thickness. The XRD results show that the copper film coated on cenospheres has a face centred cubic structure and the crystallization of the film sample increases with increasing sputtering power.

Target-context unitization effect on the familiarity-related FN400: a face recognition exclusion task.

PubMed

Guillaume, Fabrice; Etienne, Yann

2015-03-01

Using two exclusion tasks, the present study examined how the ERP correlates of face recognition are affected by the nature of the information to be retrieved. Intrinsic (facial expression) and extrinsic (background scene) visual information were paired with face identity and constituted the exclusion criterion at test time. Although perceptual information had to be taken into account in both situations, the FN400 old-new effect was observed only for old target faces on the expression-exclusion task, whereas it was found for both old target and old non-target faces in the background-exclusion situation. These results reveal that the FN400, which is generally interpreted as a correlate of familiarity, was modulated by the retrieval of intra-item and intrinsic face information, but not by the retrieval of extrinsic information. The observed effects on the FN400 depended on the nature of the information to be retrieved and its relationship (unitization) to the recognition target. On the other hand, the parietal old-new effect (generally described as an ERP correlate of recollection) reflected the retrieval of both types of contextual features equivalently. The current findings are discussed in relation to recent controversies about the nature of the recognition processes reflected by the ERP correlates of face recognition. Copyright © 2015 Elsevier B.V. All rights reserved.

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

PubMed Central

Wang, Qun; Jin, Xin

2018-01-01

We report the first results of functional properties of nitrogenized silver-permalloy thin films deposited on polyethylene terephthalic ester {PETE (C10H8O4)n} flexible substrates by magnetron sputtering. These new soft magnetic thin films have magnetization that is comparable to pure Ni81Fe19 permalloy films. Two target compositions (Ni76Fe19Ag5 and Ni72Fe18Ag10) were used to study the effect of compositional variation and sputtering parameters, including nitrogen flow rate on the phase evolution and surface properties. Aggregate flow rate and total pressure of Ar+N2 mixture was 60 sccm and 0.55 Pa, respectively. The distance between target and the substrate was kept at 100 mm, while using sputtering power from 100–130 W. Average film deposition rate was confirmed at around 2.05 nm/min for argon atmosphere and was reduced to 1.8 nm/min in reactive nitrogen atmosphere. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, vibrating sample magnetometer, and contact angle measurements were used to characterize the functional properties. Nano sized character of films was confirmed by XRD and SEM. It is found that the grain size was reduced by the formation of nitride phase, which in turns enhanced the magnetization and lowers the coercivity. Magnetic field coupling efficiency limit was determined from 1.6–2 GHz frequency limit. The results of comparable magnetic performance, lowest magnetic loss, and highest surface free energy, confirming that 15 sccm nitrogen flow rate at 115 W is optimal for producing Ag-doped permalloy flexible thin films having excellent magnetic field coupling efficiency. PMID:29562603

Ion radiation albedo effect: influence of surface roughness on ion implantation and sputtering of materials

NASA Astrophysics Data System (ADS)

Li, Yonggang; Yang, Yang; Short, Michael P.; Ding, Zejun; Zeng, Zhi; Li, Ju

2017-01-01

In fusion devices, ion retention and sputtering of materials are major concerns in the selection of compatible plasma-facing materials (PFMs), especially in the context of their microstructural conditions and surface morphologies. We demonstrate how surface roughness changes ion implantation and sputtering of materials under energetic ion irradiation. Using a new, sophisticated 3D Monte Carlo (MC) code, IM3D, and a random rough surface model, ion implantation and the sputtering yields of tungsten (W) with a surface roughness varying between 0-2 µm have been studied for irradiation by 0.1-1 keV D+, He+ and Ar+ ions. It is found that both ion backscattering and sputtering yields decrease with increasing roughness; this is hereafter called the ion radiation albedo effect. This effect is mainly dominated by the direct, line-of-sight deposition of a fraction of emitted atoms onto neighboring asperities. Backscattering and sputtering increase with more oblique irradiation angles. We propose a simple analytical formula to relate rough-surface and smooth-surface results.

Magnetron sputtered boron films for increasing hardness of a metal surface

DOEpatents

Makowiecki, Daniel M [Livermore, CA; Jankowski, Alan F [Livermore, CA

2003-05-27

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Molecular dynamics investigation of hexagonal boron nitride sputtering and sputtered particle characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Brandon D., E-mail: bradenis@umich.edu; Boyd, Iain D.

The sputtering of hexagonal boron nitride (h-BN) by impacts of energetic xenon ions is investigated using a molecular dynamics (MD) model. The model is implemented within an open-source MD framework that utilizes graphics processing units to accelerate its calculations, allowing the sputtering process to be studied in much greater detail than has been feasible in the past. Integrated sputter yields are computed over a range of ion energies from 20 eV to 300 eV, and incidence angles from 0° to 75°. Sputtering of boron is shown to occur at energies as low as 40 eV at normal incidence, and sputtering of nitrogen atmore » as low as 30 eV at normal incidence, suggesting a threshold energy between 20 eV and 40 eV. The sputter yields at 0° incidence are compared to existing experimental data and are shown to agree well over the range of ion energies investigated. The semi-empirical Bohdansky curve and an empirical exponential function are fit to the data at normal incidence, and the threshold energy for sputtering is calculated from the Bohdansky curve fit as 35 ± 2 eV. These results are shown to compare well with experimental observations that the threshold energy lies between 20 eV and 40 eV. It is demonstrated that h-BN sputters predominantly as atomic boron and diatomic nitrogen, and the velocity distribution function (VDF) of sputtered boron atoms is investigated. The calculated VDFs are found to reproduce the Sigmund-Thompson distribution predicted by Sigmund's linear cascade theory of sputtering. The average surface binding energy computed from Sigmund-Thompson curve fits is found to be 4.5 eV for ion energies of 100 eV and greater. This compares well to the value of 4.8 eV determined from independent experiments.« less

Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Särhammar, Erik, E-mail: erik.sarhammar@angstrom.uu.se; Berg, Sören; Nyberg, Tomas

2014-07-01

This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition ratemore » from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.« less

Microstructure and mechanical properties of Zr-Si-N films prepared by rf-reactive sputtering

NASA Astrophysics Data System (ADS)

Nose, M.; Chiou, W. A.; Zhou, M.; Mae, T.; Meshii, M.

2002-05-01

ZrN and ZrSiN films were prepared in an rf sputtering apparatus that has a pair of targets facing each other (referred to as the facing target-type rf sputtering). Films were deposited on silicon wafers without bias application or substrate heating in order to examine only the effect of silicon addition to the transition metal nitride films. The contents of zirconium, nitrogen, and silicon of the films were determined with an electron probe microanalyzer. The transmission electron microscopy studies were carried out in addition to x-ray diffraction. For the high resolution transmission electron microscopy observation, the field emission type transmission electron microscope was used, which provides a point-to-point resolution of 0.1 nm. The samples were observed both parallel and perpendicular to the film surface, which were plane and cross sectional views, respectively. In order to investigate the relationship between the mechanical properties and microstructure of films, the hardness was measured by a nanoindentation system at room temperature. The load was selected to keep the impression depth below 60 nm (not more than 5% of film thickness) so that the influence from the substrate can be neglected. The hardness of the films increases with small Si additions reaching the maximum value of 35 GPa at around 3 at. % Si. The tendency to grow columnar grains was strongest around this composition, while grains became equiaxial above 5 at. % of Si. The films containing 12.8% Si, which showed the lowest hardness of 18 GPa, consist of nanocrystal grains. The presence of ZrN nanocrystals embedded in Si3N4 was not observed in the present study. The hardening mechanism due to the addition of small amounts of Si in ZrN can not be determined at this time. The grain size and residual stress can make minor contributions to the hardening. A possibility of solid solution hardening due to atomistic strain, such as nitrogen atoms at interstitial sites or other point defects is

Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, Fred W; Harris, Peter R; Taylor, C. N.

2011-01-01

We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have highermore » physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.« less

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

NASA Astrophysics Data System (ADS)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

NASA Astrophysics Data System (ADS)

Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

2015-04-01

The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

On Both Spatial And Velocity Distribution Of Sputtered Particles In Magnetron Discharge

NASA Astrophysics Data System (ADS)

Vitelaru, C.; Pohoata, V.; Tiron, V.; Costin, C.; Popa, G.

2012-12-01

The kinetics of the sputtered atoms from the metallic target as well as the time-space distribution of the argon metastable atoms have been investigated for DC and high power pulse magnetron discharge by means of Tunable Diode - Laser Absorption Spectroscopy (TD-LAS) and Tunable Diode - Laser Induced Fluorescence (TD-LIF). The discharge was operated in argon (5-30 mTorr) with two different targets, tungsten and aluminum, for pulses of 1 to 20 μs, at frequencies of 0.2 to 1 kHz. Peak current intensity of ~100 A has been attained at cathode peak voltage of ~1 kV. The mean velocity distribution functions and particle fluxes of the sputtered metal atoms, in parallel and perpendicular direction to the target, have been obtained and compared for DC and pulse mode.

Bandgap Engineering of Cu(In 1-xGax)Se 2 Absorber Layers Fabricated using CuInSe 2 and CuGaSe 2 Targets for One-Step Sputtering Process

DOE PAGES

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

2016-10-17

Here we have demonstrated that the bandgap of Cu(In 1-xGa x)Se 2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe 2(CIS) and CuGaSe 2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyritemore » phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

Radiofrequency-sputtered coatings for lubrication system components and other complex surfaces

NASA Technical Reports Server (NTRS)

Spalvins, T.

1972-01-01

Irregularly shaped surfaces, such as lubrication system components (ball bearings, seals, gears, etc.), can be coated on all surfaces, including irregular shapes, when radiofrequency sputtering is used. When the specimen is properly located with respect to the sputtering target, the sputtered material covers the entire surface of the object irrespective of its geometrical configuration. An adherent, dense film is formed. The film thickness varies from 20 to 50 percent on, for example, a hearing cage or race depending on its geometry. When sputtered solid film lubricants such as molybdenum disulfide are used, a film thickness only of the order of 10 to the minus 7th power m (thousands of angstroms) is required at the contacting areas. It is only essential to determine the required film thickness at the critical areas in need of lubrication. The sections outside the areas to be lubricated fall within the thickness deviation range of 20 to 50 percent, which still constitutes a negligible change respect to tolerance requirements.

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-04-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Non-imaging ray-tracing for sputtering simulation with apodization

NASA Astrophysics Data System (ADS)

Ou, Chung-Jen

2018-06-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

X-ray photoelectron spectroscopy study of radiofrequency sputtered chromium bromide, molybdenum disilicide, and molybdenum disulfide coatings and their friction properties

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1977-01-01

Radiofrequency sputtered coatings of CRB2, MOSI2, and MOS2 were examined by X-ray photoelectron spectroscopy. The effects of sputtering target history, deposition time, RF power level, and substrate bias on film composition were studied. Friction tests were run on RF sputtered surfaces of 440-C steel to correlate XPS data with lubricating properties. Significant deviations from stoichiometry and high oxide levels for all three compounds were related to target outgassing. The effect of biasing on these two factors depended on the compound. Improved stoichiometry correlated well with good friction and wear properties.

Effect of post-annealing on sputtered MoS2 films

NASA Astrophysics Data System (ADS)

Wong, W. C.; Ng, S. M.; Wong, H. F.; Cheng, W. F.; Mak, C. L.; Leung, C. W.

2017-12-01

Typical routes for fabricating MoS2-based electronic devices rely on the transfer of as-prepared flakes to target substrates, which is incompatible with conventional device fabrication methods. In this work we investigated the preparation of MoS2 films by magnetron sputtering. By subjecting room-temperature sputtered MoS2 films to post-annealing at mild conditions (450 °C in a nitrogen flow), crystalline MoS2 films were formed. To demonstrate the compatibility of the technique with typical device fabrication processes, MoS2 was prepared on epitaxial magnetic oxide films of La0.7Sr0.3MnO3, and the magnetic behavior of the films were unaffected by the post-annealing process. This work demonstrates the possibility of fabricating electronic and spintronic devices based on continuous MoS2 films prepared by sputtering deposition.

Fabrication and characterization of flaky core-shell particles by magnetron sputtering silver onto diatomite

NASA Astrophysics Data System (ADS)

Wang, Yuanyuan; Zhang, Deyuan; Cai, Jun

2016-02-01

Diatomite has delicate porous structures and various shapes, making them ideal templates for microscopic core-shell particles fabrication. In this study, a new process of magnetron sputtering assisted with photoresist positioning was proposed to fabricate lightweight silver coated porous diatomite with superior coating quality and performance. The diatomite has been treated with different sputtering time to investigate the silver film growing process on the surface. The morphologies, constituents, phase structures and surface roughness of the silver coated diatomite were analyzed with SEM, EDS, XRD and AFM respectively. The results showed that the optimized magnetron sputtering time was 8-16 min, under which the diatomite templates were successfully coated with uniform silver film, which exhibits face centered cubic (fcc) structure, and the initial porous structures were kept. Moreover, this silver coating has lower surface roughness (RMS 4.513 ± 0.2 nm) than that obtained by electroless plating (RMS 15.692 ± 0.5 nm). And the infrared emissivity of coatings made with magnetron sputtering and electroless plating silver coated diatomite can reach to the lowest value of 0.528 and 0.716 respectively.

Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

NASA Astrophysics Data System (ADS)

Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

2016-02-01

Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

Differential Sputtering Behavior of Pyrolytic Graphite and Carbon-Carbon Composite Under Xenon Bombardment

NASA Technical Reports Server (NTRS)

Williams, John D.; Johnson, Mark L.; Williams, Desiree D.

2003-01-01

A differential sputter yield measurement technique is described, which consists of a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. This apparatus has been used to characterize the sputtering behavior of various forms of carbon including polycrystalline graphite, pyrolytic graphite, and PVD-infiltrated and pyrolized carbon-carbon composites. Sputter yield data are presented for pyrolytic graphite and carbon-carbon composite over a range of xenon ion energies from 200 eV to 1 keV and angles of incidence from 0 deg (normal incidence) to 60 deg .

Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

NASA Astrophysics Data System (ADS)

Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

2018-03-01

Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

Computer simulation of sputtering induced by swift heavy ions

NASA Astrophysics Data System (ADS)

Kucharczyk, P.; Füngerlings, A.; Weidtmann, B.; Wucher, A.

2018-07-01

New experimental results regarding the mass and charge state distribution of material sputtered under irradiation with swift heavy ions suggest fundamental differences between the ejection mechanisms under electronic and nuclear sputtering conditions. In order to illustrate the difference, computer simulations based on molecular dynamics were performed to model the surface ejection process of atoms and molecules induced by a swift heavy ion track. In a first approach, the track is homogeneously energized by assigning a fixed energy to each atom with randomly oriented direction of motion within a cylinder of a given radius around the projectile ion trace. The remainder of the target crystal is assumed to be at rest, and the resulting lattice dynamics is followed by molecular dynamics. The resulting sputter yield is calculated as a function of track radius and energy and compared to corresponding experimental data in order to find realistic values for the effective deposited lattice energy density. The sputtered material is analyzed with respect to emission angle and energy as well as depth of origin. The results are compared to corresponding data from keV sputter simulations. As a second step of complexity, the homogeneous and monoenergetic lattice energization is replaced by a starting energy distribution described by a local lattice temperature. As a first attempt, the respective temperature is assumed constant within the track, and the results are compared with those obtained from monoenergetic energization with the same average energy per atom.

Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

NASA Astrophysics Data System (ADS)

Truman, James Kelly

1992-01-01

The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be

Graphene as a Coating for Plasma Facing Components

NASA Astrophysics Data System (ADS)

Navarro, Marcos; Zamiri, Marziyeh; Kulcinski, Gerald; Lagally, Max; Santarius, John

2017-10-01

This research explores the protection by graphene of plasma facing materials bombarded with energetic ions of helium. Few studies have shown that graphene can act as a protective layer against sputtering due to energetic ions. In the presence of such irradiation, plasma facing components (PFC's) tend to develop surface morphologies that lead to the sputtering of wall material, potentially diminishing the lifetime of the PFC's and plasma performance. Since plasmas have broad applications and the quality of transferred and grown graphene is different, we have used a chemical vapor deposition method to grow on other substrates. We have also shown that graphene can reduce changes on surface morphology due to energetic helium. After irradiation, in the case of graphene-covered tungsten, our results show that, compared to the uncovered W, graphene suppresses these morphologies that form on the surface of hot W. Using Raman spectroscopy as a diagnostic, the graphene coating shows little sign of damage after being irradiated, indicating that there is little to no sputtering of carbon impurities from the surface. We have determined that the mass losses in W have been reduced significantly, which may lead to an improved plasma performance and longer PFC lifetimes. Supported by DHS Project 2015-DN-077-ARI095 and the Grainger Foundation.

Full System Model of Magnetron Sputter Chamber - Proof-of-Principle Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walton, C; Gilmer, G; Zepeda-Ruiz, L

2007-05-04

The lack of detailed knowledge of internal process conditions remains a key challenge in magnetron sputtering, both for chamber design and for process development. Fundamental information such as the pressure and temperature distribution of the sputter gas, and the energies and arrival angles of the sputtered atoms and other energetic species is often missing, or is only estimated from general formulas. However, open-source or low-cost tools are available for modeling most steps of the sputter process, which can give more accurate and complete data than textbook estimates, using only desktop computations. To get a better understanding of magnetron sputtering, wemore » have collected existing models for the 5 major process steps: the input and distribution of the neutral background gas using Direct Simulation Monte Carlo (DSMC), dynamics of the plasma using Particle In Cell-Monte Carlo Collision (PIC-MCC), impact of ions on the target using molecular dynamics (MD), transport of sputtered atoms to the substrate using DSMC, and growth of the film using hybrid Kinetic Monte Carlo (KMC) and MD methods. Models have been tested against experimental measurements. For example, gas rarefaction as observed by Rossnagel and others has been reproduced, and it is associated with a local pressure increase of {approx}50% which may strongly influence film properties such as stress. Results on energies and arrival angles of sputtered atoms and reflected gas neutrals are applied to the Kinetic Monte Carlo simulation of film growth. Model results and applications to growth of dense Cu and Be films are presented.« less

High rate DC-reactive sputter deposition of Y 2O 3 film on the textured metal substrate for the superconducting coated conductor

NASA Astrophysics Data System (ADS)

Kim, Ho-Sup; Park, Chan; Ko, Rock-Kil; Shi, Dongqui; Chung, Jun-Ki; Ha, Hong-Soo; Park, Yu-Mi; Song, Kyu-Jeong; Youm, Do-Jun

2005-10-01

Y2O3 film was directly deposited on Ni-3at%W substrate by DC reactive sputtering. DC reactive sputtering was carried out using metallic Y target and water vapor for oxidizing the elements of metallic target on the substrate. The detailed conditions of DC reactive sputtering for depositions of Y2O3 films were investigated. The window of water vapor for proper growth of Y2O3 films was determined by sufficient oxidations of the Y2O3 films and the non-oxidation of the target surface, which was required for high rate sputtering. The window turned out to be fairly wide in the chamber used. As the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated Y2O3 films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the Y2O3 buffered Ni-3at%W substrate showed Tc, Ic (77 K, self field), and Jc (77 K, self field) of 89 K, 64 A/cm and 1.1 MA/cm2, respectively.

Are the argon metastables important in high power impulse magnetron sputtering discharges?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gudmundsson, J. T., E-mail: tumi@hi.is; Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik; Lundin, D.

2015-11-15

We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization ismore » always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.« less

Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

2018-05-01

Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

Sputtering of Lunar Regolith by Solar Wind Protons and Heavy Ions, and General Aspects of Potential Sputtering

NASA Technical Reports Server (NTRS)

Alnussirat, S. T.; Sabra, M. S.; Barghouty, A. F.; Rickman, Douglas L.; Meyer, F.

2014-01-01

New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.

Simultaneous ion sputter polishing and deposition

NASA Technical Reports Server (NTRS)

Rutledge, S.; Banks, B.; Brdar, M.

1981-01-01

Results of experiments to study ion beam sputter polishing in conjunction with simultaneous deposition as a mean of polishing copper surfaces are presented. Two types of simultaneous ion sputter polishing and deposition were used in these experiments. The first type utilized sputter polishing simultaneous with vapor deposition, and the second type utilized sputter polishing simultaneous with sputter deposition. The etch and deposition rates of both techniques were studied, as well as the surface morphology and surface roughness.

Carbon atom and cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, E.; Doerner, R. P.; Shimada, M.; Tynan, G. R.

2008-08-01

Exit-angle resolved carbon atom and cluster (C2 and C3) sputtering yields are measured during different noble gas (Xe, Kr, Ar, Ne, and He) ion bombardments from a plasma, for low incident energies (75-225 eV). A quadrupole mass spectrometer (QMS) is used to detect the fraction of sputtered neutrals that is ionized in the plasma and to obtain the angular distribution by changing the angle between the target normal and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles in the region between the sample and the QMS. The effective elastic scattering cross sections of C, C2, and C3 with the different bombarding gas neutrals are obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. The total sputtering yield (C+C2+C3) for each bombarding gas is obtained from weight-loss measurements and the sputtering yield for C, C2, and C3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. We observe undercosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases and a clear decrease of the atom to cluster (C2 and C3) sputtering ratio as the incident ion mass increases, changing from a carbon atom preferential erosion for the lower incident ion masses (He, Ne, and Ar) to a cluster preferential erosion for the higher incident ion masses (Kr and Xe).

Deposition of adherent Ag-Ti duplex films on ceramics in a multiple-cathode sputter deposition system

NASA Technical Reports Server (NTRS)

Honecy, Frank S.

1992-01-01

The adhesion of Ag films deposited on oxide ceramics can be increased by first depositing intermediate films of active metals such as Ti. Such duplex coatings can be fabricated in a widely used three target sputter deposition system. It is shown here that the beneficial effect of the intermediate Ti film can be defeated by commonly used in situ target and substrate sputter cleaning procedures which result in Ag under the Ti. Auger electron spectroscopy and wear testing of the coatings are used to develop a cleaning strategy resulting in an adherent film system.

In-situ observation of sputtered particles for carbon implanted tungsten during energetic isotope ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oya, Y.; Sato, M.; Uchimura, H.

2015-03-15

Tungsten is a candidate for plasma facing materials in future fusion reactors. During DT plasma operations, carbon as an impurity will bombard tungsten, leading to the formation of tungsten-carbon (WC) layer and affecting tritium recycling behavior. The effect of carbon implantation for the dynamic recycling of deuterium, which demonstrates tritium recycling, including retention and sputtering, has been investigated using in-situ sputtered particle measurements. The C{sup +} implanted W, WC and HOPG were prepared and dynamic sputtered particles were measured during H{sub 2}{sup +} irradiation. It has been found that the major hydrocarbon species for C{sup +} implanted tungsten is CH{submore » 3}, while for WC and HOPG (Highly Oriented Pyrolytic Graphite) it is CH{sub 4}. The chemical state of hydrocarbon is controlled by the H concentration in a W-C mixed layer. The amount of C-H bond and the retention of H trapped by carbon atom should control the chemical form of hydrocarbon sputtered by H{sub 2}{sup +} irradiation and the desorption of CH{sub 3} and CH{sub 2} are due to chemical sputtering, although that for CH is physical sputtering. The activation energy for CH{sub 3} desorption has been estimated to be 0.4 eV, corresponding to the trapping process of hydrogen by carbon through the diffusion in W. It is concluded that the chemical states of hydrocarbon sputtered by H{sub 2}{sup +} irradiation for W is determined by the amount of C-H bond on the W surface. (authors)« less

Sputtering of cobalt and chromium by argon and xenon ions near the threshold energy region

NASA Technical Reports Server (NTRS)

Handoo, A. K.; Ray, P. K.

1993-01-01

Sputtering yields of cobalt and chromium by argon and xenon ions with energies below 50 eV are reported. The targets were electroplated on copper substrates. Measurable sputtering yields were obtained from cobalt with ion energies as low as 10 eV. The ion beams were produced by an ion gun. A radioactive tracer technique was used for the quantitative measurement of the sputtering yield. Co-57 and Cr-51 were used as tracers. The yield-energy curves are observed to be concave, which brings into question the practice of finding threshold energies by linear extrapolation.

Deposition of PTFE thin films by ion beam sputtering and a study of the ion bombardment effect

NASA Astrophysics Data System (ADS)

He, J. L.; Li, W. Z.; Wang, L. D.; Wang, J.; Li, H. D.

1998-02-01

Ion beam sputtering technique was employed to prepare thin films of Polytetrafluroethylene (PTFE). Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Infrared absorption (IR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis was used to evaluate the material's integrity. It was found that PTFE thin films could be grown at room temperature by direct sputtering of a PTFE target. The film's composition and structure were shown to be dependent on the sputtering energy. Films deposited by single sputtering at higher energy (˜1500 eV) were structurally quite similar to the original PTFE material. Simultaneous ion beam bombarding during film growth caused defluorination and structural changes. Mechanism for sputtering deposition of such a polymeric material is also discussed.

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

2013-05-01

WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

Sputtering effects on mirrors made of different tungsten grades

NASA Astrophysics Data System (ADS)

Voitsenya, V. S.; Ogorodnikova, O. V.; Bardamid, A. F.; Bondarenko, V. N.; Konovalov, V. G.; Lytvyn, P. M.; Marot, L.; Ryzhkov, I. V.; Shtan', A. F.; Skoryk, O. O.; Solodovchenko, S. I.

2018-03-01

Because tungsten (W) is used in present fusion devices and it is a reference material for ITER divertor and possible plasma-facing material for DEMO, we strive to understand the response of different W grades to ion bombardment. In this study, we investigated the behavior of mirrors made of four polycrystalline W grades under long-term ion sputtering. Argon (Ar) and deuterium (D) ions extracted from a plasma were used to investigate the effect of projectile mass on surface modification. Depending on the ion fluence, the reflectance measured at normal incidence was very different for different W grades. The lowest degradation rate of the reflectance was measured for the mirror made of recrystallized W. The highest degradation rate was found for one of the ITER-grade W samples. Pre-irradiation of a mirror with 20-MeV W6+ ions, as simulation of neutron irradiation in ITER, had no noticeable influence on reflectance degradation under sputtering with either Ar or D ions.

Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Högberg, Hans, E-mail: hans.hogberg@liu.se; Tengdelius, Lina; Eriksson, Fredrik

2014-07-01

Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{submore » 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.« less

Non-invasive brain stimulation targeting the right fusiform gyrus selectively increases working memory for faces.

PubMed

Brunyé, Tad T; Moran, Joseph M; Holmes, Amanda; Mahoney, Caroline R; Taylor, Holly A

2017-04-01

The human extrastriate cortex contains a region critically involved in face detection and memory, the right fusiform gyrus. The present study evaluated whether transcranial direct current stimulation (tDCS) targeting this anatomical region would selectively influence memory for faces versus non-face objects (houses). Anodal tDCS targeted the right fusiform gyrus (Brodmann's Area 37), with the anode at electrode site PO10, and cathode at FP2. Two stimulation conditions were compared in a repeated-measures design: 0.5mA versus 1.5mA intensity; a separate control group received no stimulation. Participants completed a working memory task for face and house stimuli, varying in memory load from 1 to 4 items. Individual differences measures assessed trait-based differences in facial recognition skills. Results showed 1.5mA intensity stimulation (versus 0.5mA and control) increased performance at high memory loads, but only with faces. Lower overall working memory capacity predicted a positive impact of tDCS. Results provide support for the notion of functional specialization of the right fusiform regions for maintaining face (but not non-face object) stimuli in working memory, and further suggest that low intensity electrical stimulation of this region may enhance demanding face working memory performance particularly in those with relatively poor baseline working memory skills. Published by Elsevier Inc.

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Clauson, S. L.

1990-05-01

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Measurements and Modelling of Sputtering Rates with Low Energy Ions

NASA Astrophysics Data System (ADS)

Ruzic, David N.; Smith, Preston C.; Turkot, Robert B., Jr.

1996-10-01

The angular-resolved sputtering yield of Be by D+, and Al by Ar+ was predicted and then measured. A 50 to 1000 eV ion beam from a Colutron was focused on to commercial grade and magnetron target grade samples. The S-65 C grade beryllium samples were supplied by Brush Wellman and the Al samples from TOSOH SMD. In our vacuum chamber the samples can be exposed to a dc D or Ar plasma to remove oxide, load the surface and more-nearly simulate steady state operating conditions in the plasma device. The angular distribution of the sputtered atoms was measured by collection on a single crystal graphite witness plate. The areal density of Be or Al (and BeO2 or Al2O3, after exposure to air) was then measured using a Scanning Auger Spectrometer. Total yield was also measured by deposition onto a quartz crystal oscillator simultaneously to deposition onto the witness plate. A three dimensional version of vectorized fractal TRIM (VFTRIM3D), a Monte-Carlo computer code which includes surface roughness characterized by fractal geometry, was used to predict the angular distribution of the sputtered particles and a global sputtering coefficient. Over a million trajectories were simulated for each incident angle to determine the azimuthal and polar angle distributions of the sputtered atoms. The experimental results match closely with the simulations for total yield, while the measured angular distributions depart somewhat from the predicted cosine curve.

Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

DTIC Science & Technology

2015-03-01

AFRL-RX-WP-JA-2015-0185 MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON SPUTTERING (POSTPRINT) A. N. Reed...COVERED (From – To) 29 January 2013 – 16 February 2015 4. TITLE AND SUBTITLE MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON...ABSTRACT High power impulse magnetron sputtering was used to deposit thin (~100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates

Self-organization and self-limitation in high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, Andre

The plasma over the racetrack in high power impulse magnetron sputtering develops in traveling ionization zones. Power densities can locally reach 10{sup 9} W/m{sup 2}, which is much higher than usually reported. Ionization zones move because ions are 'evacuated' by the electric field, exposing neutrals to magnetically confined, drifting electrons. Drifting secondary electrons amplify ionization of the same ionization zone where the primary ions came from, while sputtered and outgassing atoms are supplied to the following zone(s). Strong density gradients parallel to the target disrupt electron confinement: a negative feedback mechanism that stabilizes ionization runaway.

Molecular dynamics study of Al and Ni 3Al sputtering by Al clusters bombardment

NASA Astrophysics Data System (ADS)

Zhurkin, Eugeni E.; Kolesnikov, Anton S.

2002-06-01

The sputtering of Al and Ni 3Al (1 0 0) surfaces induced by impact of Al ions and Al N clusters ( N=2,4,6,9,13,55) with energies of 100 and 500 eV/atom is studied at atomic scale by means of classical molecular dynamics (MD). The MD code we used implements many-body tight binding potential splined to ZBL at short distances. Special attention has been paid to model dense cascades: we used quite big computation cells with lateral periodic and damped boundary conditions. In addition, long simulation times (10-25 ps) and representative statistics (up to 1000 runs per each case) were considered. The total sputtering yields, energy and time spectrums of sputtered particles, as well as preferential sputtering of compound target were analyzed, both in the linear and non-linear regimes. The significant "cluster enhancement" of sputtering yield was found for cluster sizes N⩾13. In parallel, we estimated collision cascade features depending on cluster size in order to interpret the nature of observed non-linear effects.

Sputtering and detection of large organic molecules from Europa

NASA Astrophysics Data System (ADS)

Johnson, R. E.; Sundqvist, B. U. R.

2018-07-01

Mass spectroscopy of bio-molecules by heavy ion induced sputtering, which became a practical laboratory procedure, was also suggested as a potential tool for spacecraft studies of targets of interest in astrobiology. With the planning of new missions to Europa, there is renewed interest in the possibility of detecting organic molecules that might have originated in its subsurface ocean and can be sputtered from its surface often intact by impacting energetic heavy ions trapped in Jupiter's magnetosphere. Here we review the laboratory data and modeling bearing on this issue. We then give estimates of the ejection into the gas-phase of trace organic species embedded in an ice matrix on Europa's surface and their possible detection during a flyby mission.

Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maaloul, L.; Gangwar, R. K.; Stafford, L., E-mail: luc.stafford@umontreal.ca

2015-07-15

A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over themore » whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.« less

Developing an in-situ Detector of Neutron-Induced Fission for Actinide Sputtering Characterization

NASA Astrophysics Data System (ADS)

Fellers, Deion

2016-09-01

The physical mechanism describing the transfer of large amounts of energy due to fission in a material is not well understood and represents one of the modern challenges facing nuclear scientists, with applications including nuclear energy and national defense. Fission fragments cause damage to the material from sputtering of matter as they pass through or near the material's surface. We have developed a new technique at the Los Alamos Neutron Science Center for characterizing the ejecta by using ultracold neutrons (neutrons with kinetic energy less than 300 neV) to induce fission at finely controlled depths in an actinide. This program will ultimately provide a detailed description of the properties of the sputtered particles as a function of the depth of the fission in the material. A key component of this project is accurately quantifying the number of neutron induced fissions in the sample. This poster depicts the development of an in-situ detector of neutron-induced fission for the AShES (Actinide Sputtering from ultracold neutron Exposure at the Surface) experiment.

Textured carbon surfaces on copper by sputtering

NASA Technical Reports Server (NTRS)

Curren, A. N. (Inventor); Jensen, K. A. (Inventor); Roman, R. F. (Inventor)

1986-01-01

A very thin layer of highly textured carbon is applied to a copper surface by a triode sputtering process. A carbon target and a copper substrate are simultaneously exposed to an argon plasma in a vacuum chamber. The resulting carbon surface is characterized by a dense, random array of needle like spires or peaks which extend perpendicularly from the copper surface. The coated copper is especially useful for electrode plates in multistage depressed collectors.

An exploratory study of recycled sputtering and CsF2- current enhancement for AMS

NASA Astrophysics Data System (ADS)

Zhao, X.-L.; Charles, C. R. J.; Cornett, R. J.; Kieser, W. E.; MacDonald, C.; Kazi, Z.; St-Jean, N.

2016-01-01

The analysis of 135Cs/Cs ratios at levels below 10-12 by accelerator mass spectrometry (AMS) would preferably use commonly available negative ion injection systems. The sputter ion sources in these injectors should ideally produce currents of Cs- or Cs-containing molecular anions approaching μA levels from targets containing mg quantities of Cs. However, since Cs is the most electro-positive stable element in nature with a low electron affinity, the generation of large negative atomic, or molecular beams containing Cs, has been very challenging. In addition, the reduction of the interferences from the 135Ba isobar and the primary 133Cs+ beam used for sputtering are also necessary. The measurement of a wide range of the isotope ratios also requires the ion source memory of previous samples be minimized. This paper describes some progresses towards a potential solution of all these problems by recycled sputtering using fluorinating targets of PbF2 with mg CsF mixed in. The problems encountered indicate that considerable further studies and some redesign of the present ion sources will be desirable.

Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions

NASA Astrophysics Data System (ADS)

Vašina, P; Hytková, T; Eliáš, M

2009-05-01

The majority of current models of the reactive magnetron sputtering assume a uniform shape of the discharge current density and the same temperature near the target and the substrate. However, in the real experimental set-up, the presence of the magnetic field causes high density plasma to form in front of the cathode in the shape of a toroid. Consequently, the discharge current density is laterally non-uniform. In addition to this, the heating of the background gas by sputtered particles, which is usually referred to as the gas rarefaction, plays an important role. This paper presents an extended model of the reactive magnetron sputtering that assumes the non-uniform discharge current density and which accommodates the gas rarefaction effect. It is devoted mainly to the study of the behaviour of the reactive sputtering rather that to the prediction of the coating properties. Outputs of this model are compared with those that assume uniform discharge current density and uniform temperature profile in the deposition chamber. Particular attention is paid to the modelling of the radial variation of the target composition near transitions from the metallic to the compound mode and vice versa. A study of the target utilization in the metallic and compound mode is performed for two different discharge current density profiles corresponding to typical two pole and multipole magnetics available on the market now. Different shapes of the discharge current density were tested. Finally, hysteresis curves are plotted for various temperature conditions in the reactor.

Method and apparatus for improved high power impulse magnetron sputtering

DOEpatents

Anders, Andre

2013-11-05

A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se; Sterner, Jan; Platzer-Björkman, Charlotte

2015-11-15

Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device.more » Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.« less

Angular distribution of hybridization in sputtered carbon thin film

NASA Astrophysics Data System (ADS)

Liu, Y.; Wang, H.; Wei, Z. C.

2017-08-01

The sp3/sp2 ratio of sputtered carbon thin film depends on the ion bombardment process and tailors the physical properties of carbon thin film. In present work, we report the angular distribution of hybridization in magnetron sputtered carbon thin film for the first time. By x-ray photoelectron spectra analyses, it is found that the sp3/sp2 ratio increases linearly with increasing the deposition angle from 0 to 90 degree, which could be attributed to the enhancement of direct knocking-out of near-surface target atoms. In addition, we also derive the sp3/sp2 ratio by simulation on complex permittivity in terahertz frequency using a modified percolation approximation tunneling model. Those derived data consist with the results from x-ray photoelectron spectroscopy.

Sputtering and ion plating for aerospace applications

NASA Technical Reports Server (NTRS)

Spalvins, T.

1981-01-01

Sputtering and ion plating technologies are reviewed in terms of their potential and present uses in the aerospace industry. Sputtering offers great universality and flexibility in depositing any material or in the synthesis of new ones. The sputter deposition process has two areas of interest: thin film and fabrication technology. Thin film sputtering technology is primarily used for aerospace mechanical components to reduce friction, wear, erosion, corrosion, high temperature oxidation, diffusion and fatigue, and also to sputter-construct temperature and strain sensors for aircraft engines. Sputter fabrication is used in intricate aircraft component manufacturing. Ion plating applications are discussed in terms of the high energy evaporant flux and the high throwing power. Excellent adherence and 3-dimensional coverage are the primary attributes of this technology.

Sputtering and ion plating for aerospace applications

NASA Technical Reports Server (NTRS)

Spalvins, T.

1981-01-01

Sputtering and ion plating technologies are reviewed in terms of their potential and present uses in the aerospace industry. Sputtering offers great universality and flexibility in depositing any material or in the synthesis of new ones. The sputter deposition process has two areas of interest: thin film and fabrication technology. Thin film sputtering technology is primarily used for aerospace mechanical components to reduce friction, wear, erosion, corrosion, high temperature oxidation, diffusion and fatigue, and also to sputter-construct temperature and strain sensors for aircraft engines. Sputter fabrication is used in intricate aircraft component manufacturing. Ion plating applications are discussed in terms of the high energy evaporant flux and the high throwing power. Excellent adherence and 3 dimensional coverage are the primary attributes of this technology.

Optical properties of sputtered aluminum on graphite/epoxy composite material

NASA Technical Reports Server (NTRS)

Witte, William G., Jr.; Teichman, Louis A.

1989-01-01

Solar absorptance, emittance, and coating thickness were measured for a range of coating thicknesses from about 400 A to 2500 A. The coatings were sputtered from an aluminum target onto 1-inch-diameter substrates of T300/5209 graphite/epoxy composite material with two different surface textures. Solar absorptance and emittance values for the specimens with the smooth surface finish were lower than those for the specimens with the rough surface finish. The ratio of solar absorptance to emittance was higher for the smooth specimens, increasing from 2 to 4 over the coating thickness range, than for the rough ones, which had a constant ratio of about 1. The solar absorptance and emittance values were dependent on the thickness of the sputtered coating.

Anomalous effects in the aluminum oxide sputtering yield

NASA Astrophysics Data System (ADS)

Schelfhout, R.; Strijckmans, K.; Depla, D.

2018-04-01

The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a new and fast method. The method is based on the meticulous determination of the reactive gas consumption during reactive DC magnetron sputtering and has been deployed to determine the sputtering yield of aluminum oxide. The accuracy of the proposed method is demonstrated by comparing its results to the common weight loss method excluding secondary effects such as redeposition. Both methods exhibit a decrease in sputtering yield with increasing discharge current. This feature of the aluminum oxide sputtering yield is described for the first time. It resembles the discrepancy between published high sputtering yield values determined by low current ion beams and the low deposition rate in the poisoned mode during reactive magnetron sputtering. Moreover, the usefulness of the new method arises from its time-resolved capabilities. The evolution of the alumina sputtering yield can now be measured up to a resolution of seconds. This reveals the complex dynamical behavior of the sputtering yield. A plausible explanation of the observed anomalies seems to originate from the balance between retention and out-diffusion of implanted gas atoms, while other possible causes are commented.

Low-Damage Sputter Deposition on Graphene

NASA Astrophysics Data System (ADS)

Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

2013-03-01

Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jhanwar, Prachi, E-mail: prachijhanwar87@gmail.com; Department of Electronics, Banasthali University-304022, Rajasthan; Kumar, Arvind

2016-04-13

Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO{sub 2} surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm{sup 2}/V.s) asmore » compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).« less

Optical monitoring of ion beam Y-Ba-Cu-O sputtering

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.

1990-11-01

The emission spectra resulting from ion beam sputtering a Y-Ba-Cu-O target were observed as a function of beam voltage and beam current. The spectra were relatively clean with several peaks readily attributed to each of Y, Ba, and Ar. Monitoring of copper and oxygen was more difficult with a single CuO peak and one O peak evident. The intensities of the cation peaks were linear with respect to beam voltage above 400 V. Since target current was found not to be directly proportional to beam current, target power was defined as the product of beam voltage and target current. The response of cation peak height to changes in target power was linear and similar for variations of either beam voltage or target current.

Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Peipei; Yang, Xu; Li, Hui

2015-10-15

A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CNmore » emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.« less

Effect of Silver Dopants on the ZnO Thin Films Prepared by a Radio Frequency Magnetron Co-Sputtering System

PubMed Central

Liu, Fang-Cheng; Li, Jyun-Yong; Chen, Tai-Hong; Chang, Chun-How; Lee, Ching-Ting; Hsiao, Wei-Hua; Liu, Day-Shan

2017-01-01

Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (AgZn) and the formation of the Ag aggregations (Ag0) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a p-type conduction was achievable after annealing at 350 °C under air ambient for 1 h. PMID:28773159

Effects of sputtering mode on the microstructure and ionic conductivity of yttria-stabilized zirconia films

NASA Astrophysics Data System (ADS)

Yeh, Tsung-Her; Lin, Ruei-De; Cherng, Bo-Ruei; Cherng, Jyh-Shiarn

2018-05-01

The microstructure and ionic conductivity of reactively sputtered yttria-stabilized zirconia (YSZ) films are systematically studied. Those films were reactively sputtered in various sputtering modes using a closed-loop controlled system with plasma emission monitoring. A transition-mode sputtering corresponding to 45% of target poisoning produces a microstructure with ultrafine crystallites embedded in an amorphous matrix, which undergoes an abnormal grain growth upon annealing at 800 °C. At 500 °C, the measured ionic conductivity of this annealed film is higher, by about a half order of magnitude, than those of its poisoned-mode counterparts, which are in turn significantly higher than that of the YSZ bulk by about two orders of magnitude. The abnormally-grown ultra-large grain size of the film deposited in the transition mode and then annealed is believed to be responsible for the former comparison due to the suppression of the grain boundary blocking effect, while the latter comparison can be attributed to the interface effect.

Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com; Pandey, Nidhi; Behera, Layanta

2016-05-23

In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films.more » In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.« less

Huge increase in gas phase nanoparticle generation by pulsed direct current sputtering in a reactive gas admixture

NASA Astrophysics Data System (ADS)

Polonskyi, Oleksandr; Peter, Tilo; Mohammad Ahadi, Amir; Hinz, Alexander; Strunskus, Thomas; Zaporojtchenko, Vladimir; Biederman, Hynek; Faupel, Franz

2013-07-01

Using reactive DC sputtering in a gas aggregation cluster source, we show that pulsed discharge gives rise to a huge increase in deposition rate of nanoparticles by more than one order of magnitude compared to continuous operation. We suggest that this effect is caused by an equilibrium between slight target oxidation (during "time-off") and subsequent sputtering of Ti oxides (sub-oxides) at "time-on" with high power impulse.

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Molybdenum and carbon atom and carbon cluster sputtering under low-energy noble gas plasma bombardment

NASA Astrophysics Data System (ADS)

Oyarzabal, Eider

Exit-angle resolved Mo atom sputtering yield under Xe ion bombardment and carbon atom and cluster (C2 and C3) sputtering yields under Xe, Kr, Ar, Ne and He ion bombardment from a plasma are measured for low incident energies (75--225 eV). An energy-resolved quadrupole mass spectrometer (QMS) is used to detect the fraction of un-scattered sputtered neutrals that become ionized in the plasma; the angular distribution is obtained by changing the angle between the target and the QMS aperture. A one-dimensional Monte Carlo code is used to simulate the interaction of the plasma and the sputtered particles between the sample and the QMS. The elastic scattering cross-sections of C, C2 and C3 with the different bombarding gas neutrals is obtained by varying the distance between the sample and the QMS and by performing a best fit of the simulation results to the experimental results. Because the results obtained with the QMS are relative, the Mo atom sputtering results are normalized to the existing data in the literature and the total sputtering yield for carbon (C+C 2+C3) for each bombarding gas is obtained from weight loss measurements. The absolute sputtering yield for C, C2 and C 3 is then calculated from the integration of the measured angular distribution, taking into account the scattering and ionization of the sputtered particles between the sample and the QMS. The angular sputtering distribution for Mo has a maximum at theta=60°, and this maximum becomes less pronounced as the incident ion energy increases. The results of the Monte Carlo TRIDYN code simulation for the angular distribution of Mo atoms sputtered by Xe bombardment are in agreement with the experiments. For carbon sputtering under-cosine angular distributions of the sputtered atoms and clusters for all the studied bombarding gases are also observed. The C, C2 and C3 sputtering yield data shows a clear decrease of the atom to cluster (C/C2 and C/C3) sputtering ratio as the incident ion mass increases

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE PAGES

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann; ...

2018-05-11

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. In this paper, we describe 12.5% ScAl single target reactive sputter deposition process and establishes amore » direct relationship between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Finally, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

Reactive sputter deposition of piezoelectric Sc 0.12Al 0.88N for contour mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response in AlN for commercial market applications in radio frequency filter technologies. Although cosputtering with multiple targets have achieved Sc incorporation in excess of 40%, industrial processes requiring stable single target sputtering are currently limited. A major concern with sputter deposition of ScAl is the control over the presence of non-c-axis oriented crystal growth, referred to as inclusions here, while simultaneously controlling film stress for suspended microelectromechanical systems (MEMS) structures. This work describes 12.5% ScAl single target reactive sputter deposition process and establishes a direct relationshipmore » between the inclusion occurrences and compressive film stress allowing for the suppression of the c-axis instability on silicon (100) and Ti/TiN/AlCu seeding layers. An initial high film stress, for suppressing inclusions, is then balanced with a lower film stress deposition to control total film stress to prevent Euler buckling of suspended MEMS devices. Contour mode resonators fabricated using these films demonstrate effective coupling coefficients up to 2.7% with figures of merit of 42. Furthermore, this work provides a method to establish inclusion free films in ScAlN piezoelectric films for good quality factor devices.« less

The production and sputtering of S2 by keV ion bombardment

NASA Technical Reports Server (NTRS)

Boring, J. W.; Chrisey, D. B.; Oshaughnessy, D. J.; Phipps, J. A.; Zhao, N.

1986-01-01

The ion bombardment of S-containing molecules in comets is simulated experimentally. Mass-analyzed 30-keV beams of Ar(+) and He(+) are directed at solid S, H2S, and CS2 targets at temperatures 15 K, and the neutral molecular species produced are ionized and analyzed using a quadrupole mass spectrometer. The dominant species detected are S1 and S2 for the S target, H2S and S2 for the H2S target, and S, CS, S2, and CS2 for the CS2 target. In the latter case, it is found that after about 10 to the 14th He(+) ions/sq cm have struck the target, further sputtering is prevented by formation of a dark brown deposit which is stable at room temperature; the residue forms more slowly when Ar(+) ions are used. These results, indicating relatively efficient S2 production by ion bombardment, are applied to theoretical models of S2 production and/or ejection by solar-wind, solar-flare, or cosmic-ray ions striking comets. It is found that direct solar-wind production of S2 by sputtering is unlikely at realistic bombardment rates, but that H2S-S2 conversion by energetic ions could be significant, with less stringent ice-temperature and irradiation-flux constraints than in the case of S2 production by photons.

Analysis of surface sputtering on a quantum statistical basis

NASA Technical Reports Server (NTRS)

Wilhelm, H. E.

1975-01-01

Surface sputtering is explained theoretically by means of a 3-body sputtering mechanism involving the ion and two surface atoms of the solid. By means of quantum-statistical mechanics, a formula for the sputtering ratio S(E) is derived from first principles. The theoretical sputtering rate S(E) was found experimentally to be proportional to the square of the difference between incident ion energy and the threshold energy for sputtering of surface atoms at low ion energies. Extrapolation of the theoretical sputtering formula to larger ion energies indicates that S(E) reaches a saturation value and finally decreases at high ion energies. The theoretical sputtering ratios S(E) for wolfram, tantalum, and molybdenum are compared with the corresponding experimental sputtering curves in the low energy region from threshold sputtering energy to 120 eV above the respective threshold energy. Theory and experiment are shown to be in good agreement.

Sputter deposition of MgxAlyOz thin films in a dual-magnetron device: a multi-species Monte Carlo model

NASA Astrophysics Data System (ADS)

Yusupov, M.; Saraiva, M.; Depla, D.; Bogaerts, A.

2012-07-01

A multi-species Monte Carlo (MC) model, combined with an analytical surface model, has been developed in order to investigate the general plasma processes occurring during the sputter deposition of complex oxide films in a dual-magnetron sputter deposition system. The important plasma species, such as electrons, Ar+ ions, fast Ar atoms and sputtered metal atoms (i.e. Mg and Al atoms) are described with the so-called multi-species MC model, whereas the deposition of MgxAlyOz films is treated by an analytical surface model. Target-substrate distances for both magnetrons in the dual-magnetron setup are varied for the purpose of growing stoichiometric complex oxide thin films. The metal atoms are sputtered from pure metallic targets, whereas the oxygen flux is only directed toward the substrate and is high enough to obtain fully oxidized thin films but low enough to avoid target poisoning. The calculations correspond to typical experimental conditions applied to grow these complex oxide films. In this paper, some calculation results are shown, such as the densities of various plasma species, their fluxes toward the targets and substrate, the deposition rates, as well as the film stoichiometry. Moreover, some results of the combined model are compared with experimental observations. Note that this is the first complete model, which can be applied for large and complicated magnetron reactor geometries, such as dual-magnetron configurations. With this model, we are able to describe all important plasma species as well as the deposition process. It can also be used to predict film stoichiometries of complex oxide films on the substrate.

A high yield neutron target

NASA Technical Reports Server (NTRS)

Alger, D. L.; Steinberg, R.; Weisenbach, P.

1974-01-01

Target, in cylinder form, rotates rapidly in front of beam. Titanium tritide film is much thicker than range of accelerated deutron. Sputtering electrode permits full use of thick film. Stream of high-velocity coolant provides efficient transfer of heat from target.

Neutral beam dose and sputtering characteristics in an ion implantation system

NASA Technical Reports Server (NTRS)

Roberts, A. S., Jr.; Ash, R. L.; Berger, M. H.

1973-01-01

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

2018-01-01

The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

NASA Astrophysics Data System (ADS)

Feder, R.; Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B.

2013-12-01

Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done.A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

Sputtering phenomena in ion thrusters

NASA Technical Reports Server (NTRS)

Robinson, R. S.; Rossnagel, S. M.

1983-01-01

Sputtering effects in discharge chambers of ion thrusters are lifetime limiting in basically two ways: (1) ion bombardment of critical thruster components at energies sufficient to cause sputtering removes significant quantities of material; enough to degrade operation through adverse dimensional changes or possibly lead to complete component failure, and (2) metals sputtered from these intensely bombarded components are deposited in other locations as thin films and subsequently flake or peel off; the flakes then lodge elsewhere in the discharge chamber with the possibility of providing conductive paths for short circuiting of thruster components such as the ion optics. This experimental work has concentrated in two areas. The first has been to operate thrusters for multi-hour periods and to observe and measure the films found inside the thruster. The second was to simulate the environment inside the discharge chamber of the thruster by means of a dual ion beam system. Here, films were sputter deposited in the presence of a second low energy bombarding beam to simulate film deposition on thruster interior surfaces that undergo simultaneous sputtering and deposition. Mo presents serious problems for use in a thruster as far as film deposition is concerned. Mo films were found to be in high stress, making them more likely to peel and flake.

Application of optical broadband monitoring to quasi-rugate filters by ion-beam sputtering

NASA Astrophysics Data System (ADS)

Lappschies, Marc; Görtz, Björn; Ristau, Detlev

2006-03-01

Methods for the manufacture of rugate filters by the ion-beam-sputtering process are presented. The first approach gives an example of a digitized version of a continuous-layer notch filter. This method allows the comparison of the basic theory of interference coatings containing thin layers with practical results. For the other methods, a movable zone target is employed to fabricate graded and gradual rugate filters. The examples demonstrate the potential of broadband optical monitoring in conjunction with the ion-beam-sputtering process. First-characterization results indicate that these types of filter may exhibit higher laser-induced damage-threshold values than those of classical filters.

Backward masked fearful faces enhance contralateral occipital cortical activity for visual targets within the spotlight of attention

PubMed Central

Reinke, Karen S.; LaMontagne, Pamela J.; Habib, Reza

2011-01-01

Spatial attention has been argued to be adaptive by enhancing the processing of visual stimuli within the ‘spotlight of attention’. We previously reported that crude threat cues (backward masked fearful faces) facilitate spatial attention through a network of brain regions consisting of the amygdala, anterior cingulate and contralateral visual cortex. However, results from previous functional magnetic resonance imaging (fMRI) dot-probe studies have been inconclusive regarding a fearful face-elicited contralateral modulation of visual targets. Here, we tested the hypothesis that the capture of spatial attention by crude threat cues would facilitate processing of subsequently presented visual stimuli within the masked fearful face-elicited ‘spotlight of attention’ in the contralateral visual cortex. Participants performed a backward masked fearful face dot-probe task while brain activity was measured with fMRI. Masked fearful face left visual field trials enhanced activity for spatially congruent targets in the right superior occipital gyrus, fusiform gyrus and lateral occipital complex, while masked fearful face right visual field trials enhanced activity in the left middle occipital gyrus. These data indicate that crude threat elicited spatial attention enhances the processing of subsequent visual stimuli in contralateral occipital cortex, which may occur by lowering neural activation thresholds in this retinotopic location. PMID:20702500

Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

NASA Astrophysics Data System (ADS)

Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

2016-01-01

As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10⿿xAgx(PO4)6(OH)2⿿x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

Sputter-deposited fuel cell membranes and electrodes

NASA Technical Reports Server (NTRS)

Narayanan, Sekharipuram R. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Chun, William (Inventor); Ruiz, Ron P. (Inventor); Valdez, Thomas I. (Inventor)

2001-01-01

A method for preparing a membrane for use in a fuel cell membrane electrode assembly includes the steps of providing an electrolyte membrane, and sputter-depositing a catalyst onto the electrolyte membrane. The sputter-deposited catalyst may be applied to multiple sides of the electrolyte membrane. A method for forming an electrode for use in a fuel cell membrane electrode assembly includes the steps of obtaining a catalyst, obtaining a backing, and sputter-depositing the catalyst onto the backing. The membranes and electrodes are useful for assembling fuel cells that include an anode electrode, a cathode electrode, a fuel supply, and an electrolyte membrane, wherein the electrolyte membrane includes a sputter-deposited catalyst, and the sputter-deposited catalyst is effective for sustaining a voltage across a membrane electrode assembly in the fuel cell.

Texturing effects in molybdenum and aluminum nitride films correlated to energetic bombardment during sputter deposition

NASA Astrophysics Data System (ADS)

Drüsedau, T. P.; Koppenhagen, K.; Bläsing, J.; John, T.-M.

Molybdenum films sputter-deposited at low pressure show a (110) to (211) texture turnover with increasing film thickness, which is accompanied by a transition from a fiber texture to a mosaic-like texture. The degree of (002) texturing of sputtered aluminum nitride (AlN) films strongly depends on nitrogen pressure in Ar/N2 or in a pure N2 atmosphere. For the understanding of these phenomena, the power density at the substrate during sputter deposition was measured by a calorimetric method and normalized to the flux of deposited atoms. For the deposition of Mo films and various other elemental films, the results of the calorimetric measurements are well described by a model. This model takes into account the contributions of plasma irradiation, the heat of condensation and the kinetic energy of sputtered atoms and reflected Ar neutrals. The latter two were calculated by TRIM.SP Monte Carlo simulations. An empirical rule is established showing that the total energy input during sputter deposition is proportional to the ratio of target atomic mass to sputtering yield. For the special case of a circular planar magnetron the radial dependence of the Mo and Ar fluxes and related momentum components at the substrate were calculated. It is concluded that mainly the lateral inhomogeneous radial momentum component of the Mo atoms is the cause of the in-plane texturing. For AlN films, maximum (002) texturing appears at about 250 eV per atom energy input.

From face processing to face recognition: Comparing three different processing levels.

PubMed

Besson, G; Barragan-Jason, G; Thorpe, S J; Fabre-Thorpe, M; Puma, S; Ceccaldi, M; Barbeau, E J

2017-01-01

Verifying that a face is from a target person (e.g. finding someone in the crowd) is a critical ability of the human face processing system. Yet how fast this can be performed is unknown. The 'entry-level shift due to expertise' hypothesis suggests that - since humans are face experts - processing faces should be as fast - or even faster - at the individual than at superordinate levels. In contrast, the 'superordinate advantage' hypothesis suggests that faces are processed from coarse to fine, so that the opposite pattern should be observed. To clarify this debate, three different face processing levels were compared: (1) a superordinate face categorization level (i.e. detecting human faces among animal faces), (2) a face familiarity level (i.e. recognizing famous faces among unfamiliar ones) and (3) verifying that a face is from a target person, our condition of interest. The minimal speed at which faces can be categorized (∼260ms) or recognized as familiar (∼360ms) has largely been documented in previous studies, and thus provides boundaries to compare our condition of interest to. Twenty-seven participants were included. The recent Speed and Accuracy Boosting procedure paradigm (SAB) was used since it constrains participants to use their fastest strategy. Stimuli were presented either upright or inverted. Results revealed that verifying that a face is from a target person (minimal RT at ∼260ms) was remarkably fast but longer than the face categorization level (∼240ms) and was more sensitive to face inversion. In contrast, it was much faster than recognizing a face as familiar (∼380ms), a level severely affected by face inversion. Face recognition corresponding to finding a specific person in a crowd thus appears achievable in only a quarter of a second. In favor of the 'superordinate advantage' hypothesis or coarse-to-fine account of the face visual hierarchy, these results suggest a graded engagement of the face processing system across processing

CIGS thin film solar cell prepared by reactive co-sputtering

NASA Astrophysics Data System (ADS)

Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

2013-09-01

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

Co-sputtered amorphous Ge-Sb-Se thin films: optical properties and structure

NASA Astrophysics Data System (ADS)

Halenkovič, Tomáš; Němec, Petr; Gutwirth, Jan; Baudet, Emeline; Specht, Marion; Gueguen, Yann; Sangleboeuf, J.-C.; Nazabal, Virginie

2017-05-01

The unique properties of amorphous chalcogenides such as wide transparency in the infrared region, low phonon energy, photosensitivity and high linear and nonlinear refractive index, make them prospective materials for photonics devices. The important question is whether the chalcogenides are stable enough or how the photosensitivity could be exacerbated for demanded applications. Of this view, the Ge-Sb-Se system is undoubtedly an interesting glassy system given the antinomic behavior of germanium and antimony with respect to photosensitivity. The amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3 and Ge28Sb12Se60. Radio-frequency sputtering is widely used for film fabrication due to its relative simplicity, easy control, and often stoichiometric material transfer from target to substrate. The advantage of this technique is the ability to explore a wide range of chalcogenide film composition by means of adjusting the contribution of each target. This makes the technique considerably effective for the exploration of properties mentioned above. In the present work, the influence of the composition determined by energy-dispersive X-ray spectroscopy on the optical properties was studied. Optical bandgap energy Egopt was determined using variable angle spectroscopic ellipsometry. The morphology and topography of the selenide sputtered films was studied by scanning electron microscopy and atomic force microscopy. The films structure was determined using Raman scattering spectroscopy.

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N2 plasma

NASA Astrophysics Data System (ADS)

Trieschmann, Jan; Ries, Stefan; Bibinov, Nikita; Awakowicz, Peter; Mráz, Stanislav; Schneider, Jochen M.; Mussenbrock, Thomas

2018-05-01

Direct current magnetron sputtering of Al by Ar and Ar/N2 low pressure plasmas was characterized by experimental and theoretical means in a unified consideration. Experimentally, the plasmas were analyzed by optical emission spectroscopy, while the film deposition rate was determined by weight measurements and laser optical microscopy, and the film composition by energy dispersive x-ray spectroscopy. Theoretically, a global particle and power balance model was used to estimate the electron temperature T e and the electron density n e of the plasma at constant discharge power. In addition, the sputtering process and the transport of the sputtered atoms were described using Monte Carlo models—TRIDYN and dsmcFoam, respectively. Initially, the non-reactive situation is characterized based on deposition experiment results, which are in agreement with predictions from simulations. Subsequently, a similar study is presented for the reactive case. The influence of the N2 addition is found to be twofold, in terms of (i) the target and substrate surface conditions (e.g., sputtering, secondary electron emission, particle sticking) and (ii) the volumetric changes of the plasma density n e governing the ion flux to the surfaces (e.g., due to additional energy conversion channels). It is shown that a combined experimental/simulation approach reveals a physically coherent and, in particular, quantitative understanding of the properties (e.g., electron density and temperature, target surface nitrogen content, sputtered Al density, deposited mass) involved in the deposition process.

Sputtering from a Porous Material by Penetrating Ions

NASA Technical Reports Server (NTRS)

Rodriguez-Nieva, J. F.; Bringa, E. M.; Cassidy, T. A.; Johnson, R. E.; Caro, A.; Fama, M.; Loeffler, M.; Baragiola, R. A.; Farkas, D.

2012-01-01

Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space, Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

Raman and PEELS studies of magnetron sputtered a-C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, S.; Jen, T.M.; Zeng, X.

Amorphous carbon coatings (a-C, a-C:H) of less than 100 nm thick were deposited on KBr pellets and silicon wafer substrate via magnetron sputtering of graphic target in argon, argon/hydrogen and argon/nitrogen atmosphere. Parallel electron energy loss spectroscopy (PEELS) analysis was used to quantify the sp{sup 2}/sp{sup 3} bonding in carbon films. Stand-alone films of amorphous carbon were produced by sputtering onto compressed KBr pellets and then floating off in distilled water for PEELS study. Raman spectroscopy was used to measure the peak intensity ratio of D-band to that of the G-band (I{sub d}/I{sub g}). It shows that higher sp{sup 3}more » fraction often associates with Raman peak ratio I{sub d}/I{sub g}. At the same time, G-band peak position P{sub g} decreases while sp{sup 3} fraction increases.« less

Ion beam sputter etching and deposition of fluoropolymers

NASA Technical Reports Server (NTRS)

Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

1978-01-01

Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

Discharge runaway in high power impulse magnetron sputtering of carbon: the effect of gas pressure, composition and target peak voltage

NASA Astrophysics Data System (ADS)

Vitelaru, Catalin; Aijaz, Asim; Constantina Parau, Anca; Kiss, Adrian Emil; Sobetkii, Arcadie; Kubart, Tomas

2018-04-01

Pressure and target voltage driven discharge runaway from low to high discharge current density regimes in high power impulse magnetron sputtering of carbon is investigated. The main purpose is to provide a meaningful insight of the discharge dynamics, with the ultimate goal to establish a correlation between discharge properties and process parameters to control the film growth. This is achieved by examining a wide range of pressures (2–20 mTorr) and target voltages (700–850 V) and measuring ion saturation current density at the substrate position. We show that the minimum plasma impedance is an important parameter identifying the discharge transition as well as establishing a stable operating condition. Using the formalism of generalized recycling model, we introduce a new parameter, ‘recycling ratio’, to quantify the process gas recycling for specific process conditions. The model takes into account the ion flux to the target, the amount of gas available, and the amount of gas required for sustaining the discharge. We show that this parameter describes the relation between the gas recycling and the discharge current density. As a test case, we discuss the pressure and voltage driven transitions by changing the gas composition when adding Ne into the discharge. We propose that standard Ar HiPIMS discharges operated with significant gas recycling do not require Ne to increase the carbon ionization.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Ion beam sputter deposited diamond like films

NASA Technical Reports Server (NTRS)

Banks, B. A.; Rutledge, S. K.

1982-01-01

A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersson, Joakim; Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

NASA Astrophysics Data System (ADS)

Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

2013-10-01

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

NASA Astrophysics Data System (ADS)

Shin, Beom-Ki; Lee, Tae-Il; Park, Ji-Hyeon; Park, Kang-Il; Ahn, Kyung-Jun; Park, Sung-Kee; Lee, Woong; Myoung, Jae-Min

2011-11-01

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

Sputtering analysis of silicates by XY-TOF-SIMS: Astrophysical applications

NASA Astrophysics Data System (ADS)

Martinez, Rafael; Langlinay, Thomas; Ponciano, Cassia; da Silveira, Enio F.; Palumbo, Maria Elisabetta; Strazzulla, Giovanni; Brucato, John R.; Hijazi, Hussein; Boduch, Philippe; Cassimi, Amine; Domaracka, Alicja; Ropars, Frédéric; Rothard, Hermann

2015-08-01

Silicates are the dominant material of many objects in the Solar System, e.g. asteroids, the Moon, the planet Mercury and meteorites. Ion bombardment by cosmic rays and solar wind may alter the reflectance spectra of irradiated silicates by inducing physico-chemical changes known as “space weathering”. Furthermore, sputtered particles contribute to the composition of the exosphere of planets or moons. Mercury’s complex particle environment surrounding the planet is composed by thermal and directional neutral atoms (exosphere) originating via surface release and charge-exchange processes, and by ionized particles originated through photo-ionization and again by surface release processes such as ion induced sputtering.As a laboratory approach to understand the evolution of the silicate surfaces and the Na vapor (as well as, in lower concentration, K and Ca) discovered on the solar facing side of Mercury, we measured sputtering yields, velocity spectra and angular distributions of secondary ions from terrestrial silicate analogs. Experiments were performed using highly charged MeV/u and keV/u ions at GANIL in a new UHV set-up (under well controlled surface conditions) [1]. Other experiments were conducted at the Pontifical Catholic University of Rio de Janeiro (PUC-Rio) by using Cf fission fragments (~ 1 MeV/u). Nepheline, an aluminosilicate containing Na and K, evaporated on Si substrates (wafers) was used as model for silicates present in Solar System objects. Production yields, measured as a function of the projectile fluence, allow to study the possible surface stoichiometry changes during irradiation. In addition, from the energy distributions N(E) of sputtered particles it is possible to estimate the fraction of particles that can escape from the gravitational field of Mercury, and those that fall back to the surface and contribute to populate the atmosphere (exosphere) of the planet.The CAPES-COFECUB French-Brazilian exchange program, a CNPq postdoctoral

Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

NASA Technical Reports Server (NTRS)

Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

1998-01-01

The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

2013-11-01

The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

Large Area Sputter Coating on Glass

NASA Astrophysics Data System (ADS)

Katayama, Yoshihito

Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

Studies of the Cr-CrN coating characteristics formed by means of the magnetron sputtering method from bulk target

NASA Astrophysics Data System (ADS)

Kachalin, G. V.; Mednikov, A. F.; Tkhabisimov, A. B.; Sidorov, S. V.

2017-07-01

The paper presents the study’s results of ion-plasma chromium based coating characteristics produced on blade steel samples 12Kh13 and EI961 by means of the magnetron sputtering method from the bulk “hot” target. A set of metallographic studies and erosion tests of coatings were carried out using the research equipment URI (unique research installation) “Hydroshock rig Erosion-M” of NRU “MPEI”. Cr-CrN based coatings have a layered structure; thickness of intermediate Cr layers ranges from 0.7 to 1.7 μm, thickness of nitride layers CrN ranges from 1.5 to 4 μm, while the overall coating thickness is 17.0-21.5 μm coating microhardness is 1830-1880 HV0.05. The resulting coatings are found to increase 1.5 times the incubation period duration of erosion wear for steels 12Kh13 and EI961; they reduce the maximum erosion rate 1.3 times, and the steady erosion rate - 1.5 times.

Advanced capabilities and applications of a sputter-RBS system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brijs, B.; Deleu, J.; Beyer, G.

1999-06-10

In previous experiments, sputter-RBS{sup 1} has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity formore » Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions.« less

Sputter deposited titanium disilicide at high substrate temperatures

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.; Lajos, R.

1984-08-01

Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on <111> bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering

NASA Astrophysics Data System (ADS)

Delahoy, A. E.; Guo, S. Y.

2005-07-01

Highly transparent and conductive In2O3 and ZnO films containing different doping elements such as Ti, Mo, Zr, Nb, Ta, W (for In2O3), and B (for ZnO) have been prepared by reactive-environment, hollow cathode sputtering (RE-HCS). The use of Nb and W as effective dopants is reported for the first time. Metallic targets were used exclusively, and the dopant concentration was easily controlled using a second sputtering power supply. As a result of the cathode and gas flow geometry, the sputtering is conducted in metal mode, and the target and doping materials are free from oxidation during the deposition process. Film resistivities achieved with the various dopants are reported. For In2O3:Mo (IMO), a resistivity of 1.6×10-4Ω cm and a mobility of 80 cm2/Vs were achieved for Mo concentrations in the range 0.5-5.0% as measured by inductively coupled plasma (ICP). X-ray photoelectron spectroscopy (XPS) analysis indicates Mo with a +6 valence state and that the film is stoichiometric. For In2O3:Ti (ITiO), a superior optical transmission is achieved relative to IMO, while carrier mobility and conductivity were similar. Remarkably, semitransparent films of InN:O having sheet resistances of 9.5 Ω/square have also been prepared. ZnO:B films deposited by RE-HCS exhibit superior optical properties relative to ZnO:Al, and when applied as a window layer to CIGS solar cells yield higher quantum efficiencies.

Optical and hydrophobic properties of co-sputtered chromium and titanium oxynitride films

NASA Astrophysics Data System (ADS)

Rawal, Sushant K.; Chawla, Amit Kumar; Jayaganthan, R.; Chandra, Ramesh

2011-08-01

The chromium and titanium oxynitride films on glass substrate were deposited by using reactive RF magnetron sputtering in the present work. The structural and optical properties of the chromium and titanium oxynitride films as a function of power variations are investigated. The chromium oxynitride films are crystalline even at low power of Cr target (≥60 W) but the titanium oxynitride films are amorphous at low target power of Ti target (≤90 W) as observed from glancing incidence X-ray diffraction (GIXRD) patterns. The residual stress and strain of the chromium oxynitride films are calculated by sin 2 ψ method, as the average crystallite size decreases with the increase in sputtering power of the Cr target, higher stress and strain values are observed. The chromium oxynitride films changes from hydrophilic to hydrophobic with the increase of contact angle value from 86.4° to 94.1°, but the deposited titanium oxynitride films are hydrophilic as observed from contact angle measurements. The changes in surface energy were calculated using contact angle measurements to substantiate the hydrophobic properties of the films. UV-vis and NIR spectrophotometer were used to obtain the transmission and absorption spectra, and the later was used for determining band gap values of the films, respectively. The refractive index of chromium and titanium oxynitride films increases with film packing density due to formation of crystalline chromium and titanium oxynitride films with the gradual rise in deposition rate as a result of increase in target powers.

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

NASA Astrophysics Data System (ADS)

Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

2016-05-01

Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4-1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

NASA Astrophysics Data System (ADS)

Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

1991-10-01

We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O+2, which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O.

Large area ion beam sputtered YBa2Cu3O(7-delta) films for novel device structures

NASA Astrophysics Data System (ADS)

Gauzzi, A.; Lucia, M. L.; Kellett, B. J.; James, J. H.; Pavuna, D.

1992-03-01

A simple single-target ion-beam system is employed to manufacture large areas of uniformly superconducting YBa2Cu3O(7-delta) films which can be reproduced. The required '123' stoichiometry is transferred from the target to the substrate when ion-beam power, target/ion-beam angle, and target temperature are adequately controlled. Ion-beam sputtering is experimentally demonstrated to be an effective technique for producing homogeneous YBa2Cu3O(7-delta) films.

Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Chuan-Xin; Li, Jun, E-mail: SHUniverjunli@163.com; Fu, Yi-Zhou

2015-11-23

This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with themore » bias stability and thermal stability.« less

Properties of Nanocomposite Nickel-Carbon Films Deposited by Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Grenadyorov, A. S.; Oskomov, K. V.; Solov'ev, A. A.; Rabotkin, S. V.; Zakharov, A. N.; Semenov, V. A.; Oskirko, V. O.; Yelgin, Yu. I.; Korneva, O. S.

2017-12-01

The method of magnetron sputtering was used to produce a-C and a-C:Ni films on substrates of monocrystalline silicon and thermoelectric material of n-type ((Bi2Te3)0.94(Bi2Se3)0.06) and p-type ((Bi2Te3)0.20(Sb2Te3)0.80) conductivity. The authors studied the effect of Ni concentration on specific electric resistance, hardness and adhesion of the produced films. It was demonstrated that specific resistance of a-C films deposited by graphite target sputtering when supplying high bias voltage onto the substrate can be reduced by increasing the share of graphitized carbon. Adding Ni to such films allows additionally reducing their specific resistance. The increase in Ni content is accompanied with the decrease in hardness and adhesion of a-C:Ni films. The acquired values of specific electric resistance and adhesion of a-C:Ni films to thermoelectric materials allow using them as barrier anti-diffusion coatings of thermoelectric modules.

Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitelaru, Catalin; National Institute for Optoelectronics, Magurele-Bucharest, RO 077125; Lundin, Daniel

2013-09-02

The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets

NASA Astrophysics Data System (ADS)

Peng, Xiao; Zhao, Ming; Zhuang, Daming; Sun, Rujun; Zhang, Leng; Wei, Yaowei; Lv, Xunyan; Wu, Yixuan; Ren, Guoan

2018-06-01

We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron-thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%.

Sputtering in mercury ion thrusters

NASA Technical Reports Server (NTRS)

Mantenieks, M. A.; Rawlin, V. K.

1979-01-01

A model, which assumes that chemisorption is the dominant mechanism, is applied to the sputtering rate measurements of the screen grid of a 30 cm thruster in the presence of nitrogen. The model utilizes inputs from a variety of experimental and analytical sources. The model of environmental effects on sputtering was applied to thruster conditions of low discharge voltage and a discussion of the comparison of theory and experiment is presented.

Nanoscale growth twins in sputtered metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misra, Amit; Anderoglu, Osman; Hoagland, Richard G

2008-01-01

We review recent studies on the mechanical properties of sputtered Cu and 330 stainless steel films with {l_brace}1 1 1{r_brace} nanoscale growth twins preferentially oriented perpendicular to growth direction. The mechanisms of formation of growth twins during sputtering and the deformation mechanisms that enable usually high strengths in nanotwinned structures are highlighted. Growth twins in sputtered films possess good thermal stability at elevated temperature, providing an approach to extend the application of high strength nanostructured metals to higher temperatures.

Effect of sputtering power on MgF2 thin films deposited by sputtering technique under fluorine trapping

NASA Astrophysics Data System (ADS)

De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Prathap, C.; Rao, K. Divakar; Sahoo, N. K.

2016-05-01

A non-conventional magnetron sputtering technique was explored to deposit magnesium fluoride thin films using the concept of fluorine gas trapping without the introduction of additional fluorine gas flow inside the chamber. The effect of magnetron power from 50 W to 250 W has been explored on structural, optical and physical properties of the samples. Polycrystalline nature with tetragonal crystallinity of the films has been confirmed by GIXRD measurements along with thickness dependency. Monotonic increase of attenuation coefficient (k) with RF power has been explained in terms of target compound dissociation probability. In conclusion, with fluorine trapping method, the samples deposited at lower RF powers (<100 W) are found to be more suitable for optical applications.

The Impact of Face Skin Tone vs. Face Symmetry on Perceived Facial Attractiveness.

PubMed

Vera Cruz, Germano

2018-01-01

The purpose of this study was to assess and compare the relative contribution of skin tone and symmetry on judgment of attractiveness regarding female faces. Two hundred and fifteen Mozambican adults were presented with a set of faces, and instructed to rate their degree of attractiveness along a continuous scale. Chi-square, factorial weight analyses and ANOVA were used to analyze the data. Face skin tone had a significant impact on the participants' attractiveness judgment of target faces. However, the target face skin tone contribution to the participants' attractiveness judgment (5% of the total variance) was much weaker than the contribution of the target face symmetry (85% of the total variance). These results imply that skin bleaching, common among Black people across sub-Saharan African countries, is not only dangerous to the health of those who practice it, but it is unlikely to make them appear much more attractive.

Sputtering of ices in the outer solar system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, R.E.

1996-01-01

Exploration of the outer solar system has led to studies in a new area of physics: electronically induced sputtering of low-temperature, condensed-gas solids (ices). Many of the icy bodies in the outer solar system were found to be bombarded by relatively intense fluxes of ions and electrons, causing both changes in their optical reflectance and ejection (sputtering) of molecules from their surfaces. The small cohesive energies of the condensed-gas solids afford relatively large sputtering rates from the electronic excitations produced in the solid by fast ions and electrons. Such sputtering produces an ambient gas about an icy body, often themore » source of the local plasma. This colloquium outlines the physics of the sputtering of ices and its relevance to several outer-solar-system phenomena: the sputter-produced plasma trapped in Saturn{close_quote}s magnetosphere; the O{sub 2} atmosphere on Europa; and optical absorption features such as SO{sub 2} in the surface of Europa and O{sub 2} and, possibly, O{sub 3} in the surface of Ganymede. {copyright} {ital 1996 The American Physical Society.}« less

Face features and face configurations both contribute to visual crowding.

PubMed

Sun, Hsin-Mei; Balas, Benjamin

2015-02-01

Crowding refers to the inability to recognize an object in peripheral vision when other objects are presented nearby (Whitney & Levi Trends in Cognitive Sciences, 15, 160-168, 2011). A popular explanation of crowding is that features of the target and flankers are combined inappropriately when they are located within an integration field, thus impairing target recognition (Pelli, Palomares, & Majaj Journal of Vision, 4(12), 12:1136-1169, 2004). However, it remains unclear which features of the target and flankers are combined inappropriately to cause crowding (Levi Vision Research, 48, 635-654, 2008). For example, in a complex stimulus (e.g., a face), to what extent does crowding result from the integration of features at a part-based level or at the level of global processing of the configural appearance? In this study, we used a face categorization task and different types of flankers to examine how much the magnitude of visual crowding depends on the similarity of face parts or of global configurations. We created flankers with face-like features (e.g., the eyes, nose, and mouth) in typical and scrambled configurations to examine the impacts of part appearance and global configuration on the visual crowding of faces. Additionally, we used "electrical socket" flankers that mimicked first-order face configuration but had only schematic features, to examine the extent to which global face geometry impacted crowding. Our results indicated that both face parts and configurations contribute to visual crowding, suggesting that face similarity as realized under crowded conditions includes both aspects of facial appearance.

Familiarity facilitates feature-based face processing.

PubMed

Visconti di Oleggio Castello, Matteo; Wheeler, Kelsey G; Cipolli, Carlo; Gobbini, M Ida

2017-01-01

Recognition of personally familiar faces is remarkably efficient, effortless and robust. We asked if feature-based face processing facilitates detection of familiar faces by testing the effect of face inversion on a visual search task for familiar and unfamiliar faces. Because face inversion disrupts configural and holistic face processing, we hypothesized that inversion would diminish the familiarity advantage to the extent that it is mediated by such processing. Subjects detected personally familiar and stranger target faces in arrays of two, four, or six face images. Subjects showed significant facilitation of personally familiar face detection for both upright and inverted faces. The effect of familiarity on target absent trials, which involved only rejection of unfamiliar face distractors, suggests that familiarity facilitates rejection of unfamiliar distractors as well as detection of familiar targets. The preserved familiarity effect for inverted faces suggests that facilitation of face detection afforded by familiarity reflects mostly feature-based processes.

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguirre, B.; Vemuri, R. S.; Zubia, David

2011-01-01

Hafnium oxide (HfO₂) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO₂ ceramic target has been employed for sputtering while varying the Ts from room temperature to 500⁰C during deposition. The effect of Ts on the growth and microstructure of deposited HfO₂ films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition ofmore » the HfO₂ films. Structural characterization indicates that the HfO₂ films grown at Ts<200 ⁰C are amorphous while films grown at Ts>200 ⁰C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ⁰C. Nanocrystalline HfO₂ films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO₂ films. An interface layer (IL) formation occurs due to reaction at the HfO₂-Si interface for HfO₂ films deposited at Ts>200 ⁰C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO₂-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.« less

Solar-Wind Protons and Heavy Ions Sputtering of Lunar Surface Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barghouty, N.; Meyer, Fred W; Harris, Peter R

2011-01-01

Lunar surface materials are exposed to {approx}1 keV/amu solar-wind protons and heavy ions on almost continuous basis. As the lunar surface consists of mostly oxides, these materials suffer, in principle, both kinetic and potential sputtering due to the actions of the solar-wind ions. Sputtering is an important mechanism affecting the composition of both the lunar surface and its tenuous exosphere. While the contribution of kinetic sputtering to the changes in the composition of the surface layer of these oxides is well understood and modeled, the role and implications of potential sputtering remain unclear. As new potential-sputtering data from multi-charged ionsmore » impacting lunar regolith simulants are becoming available from Oak Ridge National Laboratory's MIRF, we examine the role and possible implications of potential sputtering of Lunar KREEP soil. Using a non-equilibrium model we demonstrate that solar-wind heavy ions induced sputtering is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.« less

Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony

2012-07-15

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

ERPs reveal subliminal processing of fearful faces.

PubMed

Kiss, Monika; Eimer, Martin

2008-03-01

To investigate whether facial expression is processed in the absence of conscious awareness, ERPs were recorded in a task in which participants had to identify the expression of masked fearful and neutral target faces. On supraliminal trials (200 ms target duration), in which identification performance was high, a sustained positivity to fearful versus neutral target faces started 140 ms after target face onset. On subliminal trials (8 ms target duration), identification performance was at chance level, but ERPs still showed systematic fear-specific effects. An early positivity to fearful target faces was present but smaller than on supraliminal trials. A subsequent enhanced N2 to fearful faces was only present for subliminal trials. In contrast, a P3 enhancement to fearful faces was observed on supraliminal but not subliminal trials. Results demonstrate rapid emotional expression processing in the absence of awareness.

ERPs reveal subliminal processing of fearful faces

PubMed Central

Kiss, Monika; Eimer, Martin

2008-01-01

To investigate whether facial expression is processed in the absence of conscious awareness, ERPs were recorded in a task where participants had to identify the expression of masked fearful and neutral target faces. On supraliminal trials (200 ms target duration), where identification performance was high, a sustained positivity to fearful versus neutral target faces started 140 ms after target face onset. On subliminal trials (8 ms target duration), identification performance was at chance level, but ERPs still showed systematic fear-specific effects. An early positivity to fearful target faces was present but smaller than on supraliminal trials. A subsequent enhanced N2 to fearful faces was only present for subliminal trials. In contrast, a P3 enhancement to fearful faces was observed on supraliminal but not subliminal trials. Results demonstrate rapid emotional expression processing in the absence of awareness. PMID:17995905

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si withoutmore » HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.« less

Low-damage high-throughput grazing-angle sputter deposition on graphene

NASA Astrophysics Data System (ADS)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

REACTIVE SPUTTER DEPOSITION OF CHROMIUM NITRIDE COATINGS

EPA Science Inventory

The effect of substrate temperature and sputtering gas compositon on the structure and properties of chromium-chromium nitride films deposited on C-1040 steel using r.f. magnetron sputter deposition was investigated. X-ray diffraction analysis was used to determine the structure ...

Application of ESCA to the determination of stoichiometry in sputtered coatings and interface regions

NASA Technical Reports Server (NTRS)

Wheeler, D. R.

1978-01-01

X-ray photoelectron spectroscopy was used to characterize radiofrequency sputter deposited films of several refractory compounds. Both the bulk film properties such as purity and stoichiometry and the character of the interfacial region between the film and substrate were examined. The materials were CrB2, MoS2, Mo2C, and Mo2B5 deposited on 440C steel. It was found that oxygen from the sputtering target was the primary impurity in all cases. Biasing improves the film purity. The effect of biasing on film stoichiometry is different for each compound. Comparison of the interfacial composition with friction data suggests that adhesion of these films is improved if a region of mixed film and iron oxides can be formed.

Electronic sputtering of LiF, CaF2, LaF3 and UF4 with 197 MeV Au ions. Is the stoichiometry of atom emission preserved?

NASA Astrophysics Data System (ADS)

Toulemonde, M.; Assmann, W.; Muller, D.; Trautmann, C.

2017-09-01

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. Four different fluoride targets, LiF, CaF2, LaF3 and UF4 were irradiated in the electronic energy loss regime using 197 MeV Au ions. The angular distribution of particles sputtered from the surface of freshly cleaved LiF and CaF2 single crystals is composed of a broad cosine distribution superimposed by a jet-like peak that appears perpendicular to the surface independent of the angle of beam incidence. For LiF, the particle emission in the entire angular distribution (jet plus broad cosine component) is stoichiometric, whereas for CaF2 the ratio of the sputtered F to Ca particles is at large angles by a factor of two smaller than the stoichiometry of the crystal. For single crystalline LaF3 no jet component is observed and the angular distribution is non-stoichiometric with the number of sputtered F particles being slightly larger than the number of sputtered La particles. In the case of UF4, the target was polycrystalline and had a much rougher surface compared to cleaved crystals. This destroys the appearance of a possible jet component leading to a broad angular distribution. The ratio of sputtered U atoms compared to F atoms is in the order of 1-2, i.e. the number of collected particles on the catcher is also non-stoichiometric. Such unlike behavior of particles sputtered from different fluoride crystals creates new questions.

Defects, stoichiometry, and electronic transport in SrTiO{sub 3-δ} epilayers: A high pressure oxygen sputter deposition study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ambwani, P.; Xu, P.; Jeong, J. S.

SrTiO{sub 3} is not only of enduring interest due to its unique dielectric, structural, and lattice dynamical properties, but is also the archetypal perovskite oxide semiconductor and a foundational material in oxide heterostructures and electronics. This has naturally focused attention on growth, stoichiometry, and defects in SrTiO{sub 3}, one exciting recent development being such precisely stoichiometric defect-managed thin films that electron mobilities have finally exceeded bulk crystals. This has been achieved only by molecular beam epitaxy, however (and to a somewhat lesser extent pulsed laser deposition (PLD)), and numerous open questions remain. Here, we present a study of the stoichiometry,more » defects, and structure in SrTiO{sub 3} synthesized by a different method, high pressure oxygen sputtering, relating the results to electronic transport. We find that this form of sputter deposition is also capable of homoepitaxy of precisely stoichiometric SrTiO{sub 3}, but only provided that substrate and target preparation, temperature, pressure, and deposition rate are carefully controlled. Even under these conditions, oxygen-vacancy-doped heteroepitaxial SrTiO{sub 3} films are found to have carrier density, mobility, and conductivity significantly lower than bulk. While surface depletion plays a role, it is argued from particle-induced X-ray emission (PIXE) measurements of trace impurities in commercial sputtering targets that this is also due to deep acceptors such as Fe at 100's of parts-per-million levels. Comparisons of PIXE from SrTiO{sub 3} crystals and polycrystalline targets are shown to be of general interest, with clear implications for sputter and PLD deposition of this important material.« less

Growth and characterization of high quality ZnS thin films by RF sputtering

NASA Astrophysics Data System (ADS)

Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

2012-06-01

High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stranak, Vitezslav; University of South Bohemia, Institute of Physics and Biophysics, Branisovska 31, 370 05 Ceske Budejovice; Herrendorf, Ann-Pierra

2012-11-01

This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 {mu}s after the onset of the HiPIMS pulse. Further, a highmore » concentration of double charged Ti{sup ++} with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry.« less

The effect of plasma impurities on the sputtering of tungsten carbide

NASA Astrophysics Data System (ADS)

Vörtler, K.; Björkas, C.; Nordlund, K.

2011-03-01

Understanding of sputtering by ion bombardment is needed in a wide range of applications. In fusion reactors, ion impacts originating from a hydrogen-isotope-rich plasma will lead, among other effects, to sputtering of the wall material. To study the effect of plasma impurities on the sputtering of the wall mixed material tungsten carbide molecular dynamics simulations were carried out. Simulations of cumulative D cobombardment with C, W, He, Ne or Ar impurities on crystalline tungsten carbide were performed in the energy range 100-300 eV. The sputtering yields obtained at low fluences were compared to steady state SDTrimSP yields. During bombardment single C atom sputtering was preferentially observed. We also detected significant WxCy molecule sputtering. We found that this molecule sputtering mechanism is of physical origin.

Matrix Sputtering Method: A Novel Physical Approach for Photoluminescent Noble Metal Nanoclusters.

PubMed

Ishida, Yohei; Corpuz, Ryan D; Yonezawa, Tetsu

2017-12-19

variety of photoluminescent monometallic nanoclusters of Au, Ag, and Cu, all of which showed stable emission in both solution and solid form via our matrix sputtering method with the induction of cationic-, neutral-, and anionic-charged thiol ligands. We also succeeded in synthesizing photoluminescent bimetallic Au-Ag nanoclusters that showed tunable emission within the UV-NIR region by controlling the composition of the atomic ratio by a double-target sputtering technique. Most importantly, we have revealed the formation mechanism of these unique photoluminescent nanoclusters by sputtering, which had relatively larger diameters (ca. 1-3 nm) as determined using TEM and stronger emission quantum yield (max. 16.1%) as compared to typical photoluminescent nanoclusters prepared by chemical means. We believe the high tunability of sputtering systems presented here has significant advantages for creating novel photoluminescent nanoclusters as a complementary strategy to common chemical methods. This Account highlights our journey toward understanding the photophysical properties and formation mechanism of photoluminescent noble metal nanoclusters via the sputtering method, a novel strategy that will contribute widely to the body of scientific knowledge of metal nanoparticles and nanoclusters.

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE PAGES

Gaowei, M.; Ding, Z.; Schubert, S.; ...

2017-11-10

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaowei, M.; Ding, Z.; Schubert, S.

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. Here in this article, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K 2CsSb sputtermore » target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength.« less

Electric tunable behavior of sputtered lead barium zirconate thin films

NASA Astrophysics Data System (ADS)

Wu, Lin-Jung; Wu, Jenn-Ming; Huang, Hsin-Erh; Bor, Hui-Yun

2007-02-01

Lead barium zirconate (PBZ) films were grown on Pt /Ti/SiO2/Si substrates by rf-magnetron sputtering. The sputtered PBZ films possess pure perovskite phase, uniform microstructure, and excellent tunable behaviors. The tunability and loss tangent of sputtered PBZ films depend greatly on the oxygen mixing ratio (OMR). The optimal dielectric tunable behavior occurs in the PBZ films sputtered at 10% OMR. The sputtered PBZ film (10% OMR) possesses a value of figure of merit of 60, promising for frequency-agile applications. Bulk acoustic waves induced by electromechanical coupling occur at 2.72GHz, which is useful in fabricating filters and related devices in the microwave range.

Thin film deposition by electric and magnetic crossed-field diode sputtering

DOEpatents

Welch, Kimo M.

1977-01-01

Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

Thin film deposition by electric and magnetic crossed-field diode sputtering

DOEpatents

Welch, Kimo M.

1980-01-01

Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

NASA Astrophysics Data System (ADS)

de Castro, Marcelo S. B.; Ferreira, Carlos L.; de Avillez, Roberto R.

2013-09-01

Vanadium oxide thin films were grown by RF magnetron sputtering from a V2O5 target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon-oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure. X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V2O5, VO2, V5O9 and V2O3), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1 mΩ cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from -0.02 to -2.51% K-1. Computational thermodynamics was used to simulate the phase diagram of the vanadium-oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.

Holistic face training enhances face processing in developmental prosopagnosia

PubMed Central

Cohan, Sarah; Nakayama, Ken

2014-01-01

Prosopagnosia has largely been regarded as an untreatable disorder. However, recent case studies using cognitive training have shown that it is possible to enhance face recognition abilities in individuals with developmental prosopagnosia. Our goal was to determine if this approach could be effective in a larger population of developmental prosopagnosics. We trained 24 developmental prosopagnosics using a 3-week online face-training program targeting holistic face processing. Twelve subjects with developmental prosopagnosia were assessed before and after training, and the other 12 were assessed before and after a waiting period, they then performed the training, and were then assessed again. The assessments included measures of front-view face discrimination, face discrimination with view-point changes, measures of holistic face processing, and a 5-day diary to quantify potential real-world improvements. Compared with the waiting period, developmental prosopagnosics showed moderate but significant overall training-related improvements on measures of front-view face discrimination. Those who reached the more difficult levels of training (‘better’ trainees) showed the strongest improvements in front-view face discrimination and showed significantly increased holistic face processing to the point of being similar to that of unimpaired control subjects. Despite challenges in characterizing developmental prosopagnosics’ everyday face recognition and potential biases in self-report, results also showed modest but consistent self-reported diary improvements. In summary, we demonstrate that by using cognitive training that targets holistic processing, it is possible to enhance face perception across a group of developmental prosopagnosics and further suggest that those who improved the most on the training task received the greatest benefits. PMID:24691394

Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

2011-09-01

The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

Studies on RF sputtered (WO3)1-x (V2O5)x thin films for smart window applications

NASA Astrophysics Data System (ADS)

Meenakshi, M.; Sivakumar, R.; Perumal, P.; Sanjeeviraja, C.

2016-05-01

V2O5 doped WO3 targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO3)1-x (V2O5)x were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

2009-05-01

Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

Analysis of a tungsten sputtering experiment in DIII-D and code/data validation of high redeposition/reduced erosion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Brooks, J. N.; Elder, J. D.

2015-03-29

We analyze a DIII-D tokamak experiment where two tungsten spots on the removable DiMES divertor probe were exposed to 12 s of attached plasma conditions, with moderate strike point temperature and density (~20 eV, ~4.5 × 10 19 m –3), and 3% carbon impurity content. Both very small (1 mm diameter) and small (1 cm diameter) deposited samples were used for assessing gross and net tungsten sputtering erosion. The analysis uses a 3-D erosion/redeposition code package (REDEP/WBC), with input from a diagnostic-calibrated near-surface plasma code (OEDGE), and with focus on charge state resolved impinging carbon ion flux and energy. Themore » tungsten surfaces are primarily sputtered by the carbon, in charge states +1 to +4. We predict high redeposition (~75%) of sputtered tungsten on the 1 cm spot—with consequent reduced net erosion—and this agrees well with post-exposure DiMES probe RBS analysis data. As a result, this study and recent related work is encouraging for erosion lifetime and non-contamination performance of tokamak reactor high-Z plasma facing components.« less

Purity of targets prepared on Cu substrates

NASA Astrophysics Data System (ADS)

Méens, A.; Rossini, I.; Sens, J. C.

1993-09-01

The purity of several elemental self-supporting targets usually prepared by evaporation onto soluble Cu substrates has been studied. The targets were analysed by Rutherford backscattering and instrumental neutron activation analysis. Because of the high percentage of Cu observed in some Si targets, further measurements, including transmission electron microscopy, have been performed on Si targets deposited by e-gun bombardment onto Cu and ion-beam sputtering onto betaine.

Seeing Objects as Faces Enhances Object Detection.

PubMed

Takahashi, Kohske; Watanabe, Katsumi

2015-10-01

The face is a special visual stimulus. Both bottom-up processes for low-level facial features and top-down modulation by face expectations contribute to the advantages of face perception. However, it is hard to dissociate the top-down factors from the bottom-up processes, since facial stimuli mandatorily lead to face awareness. In the present study, using the face pareidolia phenomenon, we demonstrated that face awareness, namely seeing an object as a face, enhances object detection performance. In face pareidolia, some people see a visual stimulus, for example, three dots arranged in V shape, as a face, while others do not. This phenomenon allows us to investigate the effect of face awareness leaving the stimulus per se unchanged. Participants were asked to detect a face target or a triangle target. While target per se was identical between the two tasks, the detection sensitivity was higher when the participants recognized the target as a face. This was the case irrespective of the stimulus eccentricity or the vertical orientation of the stimulus. These results demonstrate that seeing an object as a face facilitates object detection via top-down modulation. The advantages of face perception are, therefore, at least partly, due to face awareness.

Seeing Objects as Faces Enhances Object Detection

PubMed Central

Watanabe, Katsumi

2015-01-01

The face is a special visual stimulus. Both bottom-up processes for low-level facial features and top-down modulation by face expectations contribute to the advantages of face perception. However, it is hard to dissociate the top-down factors from the bottom-up processes, since facial stimuli mandatorily lead to face awareness. In the present study, using the face pareidolia phenomenon, we demonstrated that face awareness, namely seeing an object as a face, enhances object detection performance. In face pareidolia, some people see a visual stimulus, for example, three dots arranged in V shape, as a face, while others do not. This phenomenon allows us to investigate the effect of face awareness leaving the stimulus per se unchanged. Participants were asked to detect a face target or a triangle target. While target per se was identical between the two tasks, the detection sensitivity was higher when the participants recognized the target as a face. This was the case irrespective of the stimulus eccentricity or the vertical orientation of the stimulus. These results demonstrate that seeing an object as a face facilitates object detection via top-down modulation. The advantages of face perception are, therefore, at least partly, due to face awareness. PMID:27648219

Emotion Words: Adding Face Value.

PubMed

Fugate, Jennifer M B; Gendron, Maria; Nakashima, Satoshi F; Barrett, Lisa Feldman

2017-06-12

Despite a growing number of studies suggesting that emotion words affect perceptual judgments of emotional stimuli, little is known about how emotion words affect perceptual memory for emotional faces. In Experiments 1 and 2 we tested how emotion words (compared with control words) affected participants' abilities to select a target emotional face from among distractor faces. Participants were generally more likely to false alarm to distractor emotional faces when primed with an emotion word congruent with the face (compared with a control word). Moreover, participants showed both decreased sensitivity (d') to discriminate between target and distractor faces, as well as altered response biases (c; more likely to answer "yes") when primed with an emotion word (compared with a control word). In Experiment 3 we showed that emotion words had more of an effect on perceptual memory judgments when the structural information in the target face was limited, as well as when participants were only able to categorize the face with a partially congruent emotion word. The overall results are consistent with the idea that emotion words affect the encoding of emotional faces in perceptual memory. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures.

PubMed

Saito, Yuta; Fons, Paul; Makino, Kotaro; Mitrofanov, Kirill V; Uesugi, Fumihiko; Takeguchi, Masaki; Kolobov, Alexander V; Tominaga, Junji

2017-10-12

Growth of Bi-Te films by helicon-wave magnetron sputtering is systematically explored using alloy targets. The film compositions obtained are found to strongly depend on both the sputtering and antenna-coil powers. The obtainable film compositions range from Bi 55 Te 45 to Bi 43 Te 57 when a Bi 2 Te 3 alloy target is used, and from Bi 42 Te 58 to Bi 40 Te 60 (Bi 2 Te 3 ) for a Te-rich Bi 30 Te 70 target. All films show strong orientation of the van der Waals layers (00l planes) parallel to the substrate. The atomic level stacking of Bi 2 Te 3 quintuple and Bi bi-layers has been directly observed by high resolution transmission electron microscopy. Band structure simulations reveal that Bi-rich Bi 4 Te 3 bulk is a zero band gap semimetal with a Dirac cone at the Gamma point when spin-orbit coupling is included. Optical measurements also confirm that the material has a zero band gap. The tunability of the composition and the topological insulating properties of the layers will enable the use of these materials for future electronics applications on an industrial scale.

Sputtering by the Solar Wind: Effects of Variable Composition

NASA Technical Reports Server (NTRS)

Killen, R. M.; Arrell, W. M.; Sarantos, M.; Delory, G. T.

2011-01-01

It has long been recognized that solar wind bombardment onto exposed surfaces in the solar system will produce an energetic component to the exospheres about those bodies. Laboratory experiments have shown that there is no increase in the sputtering yield caused by highly charged heavy ions for metallic and for semiconducting surfaces, but the sputter yield can be noticeably increased in the case of a good insulating surface. Recently measurements of the solar wind composition have become available. It is now known that the solar wind composition is highly dependent on the origin of the particular plasma. Using the measured composition of the slow wind, fast wind, solar energetic particle (SEP) population, and coronal mass ejection (CME), broken down into its various components, we have estimated the total sputter yield for each type of solar wind. Whereas many previous calculations of sputtering were limited to the effects of proton bombardment. we show that the heavy ion component. especially the He++ component. can greatly enhance the total sputter yield during times when the heavy ion population is enhanced. We will discuss sputtering of both neutrals and ions.

Modeling Solar-Wind Heavy-Ions' Potential Sputtering of Lunar KREEP Surface

NASA Technical Reports Server (NTRS)

Barghouty, A. F.; Meyer, F. W.; Harris, R. P.; Adams, J. H., Jr.

2012-01-01

Recent laboratory data suggest that potential sputtering may be an important weathering mechanism that can affect the composition of both the lunar surface and its tenuous exosphere; its role and implications, however, remain unclear. Using a relatively simple kinetic model, we will demonstrate that solar-wind heavy ions induced sputtering of KREEP surfaces is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We will also also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications.

PubMed

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-22

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

NASA Astrophysics Data System (ADS)

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-09-01

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows.

Integration of gold-sputtered electrofluidic paper on wire-included analytical platforms for glucose biosensing.

PubMed

Núnez-Bajo, Estefanía; Carmen Blanco-López, M; Costa-García, Agustín; Teresa Fernández-Abedul, M

2017-05-15

This work describes the fabrication and evaluation of an electroanalytical paper-based platform based on the combination of both, reusable and disposable materials in order to generate simple, versatile and low-cost microfluidic devices. With this aim, a holder containing metal wires that act as reusable reference and counter electrodes has been developed. The gold-sputtered paper electrode is disposable and easily interchangeable, meanwhile the platform that includes reference and counter electrodes can be reused. The detection zone in the paper is delimited by drawing a hydrophobic line with an inexpensive permanent marker. The effect of experimental variables such as adding solutions through the face where the gold was sputtered (upwards) or through the opposite one (downwards) as well as of other working parameters were studied by cyclic and differential pulse voltammetry with potassium ferrocyanide as a common redox probe and indicator species for enzymatic, immune and DNA biosensing. Enzymatic determination of glucose in real food samples prove the feasibility of the developed system for the construction of electrochemical biosensors. Copyright © 2017 Elsevier B.V. All rights reserved.

Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrasonis, G.; Gago, R.; Jimenez, I.

2005-10-01

Carbon (C) and carbon nitride (CN{sub x}) films were grown on Si(100) substrates by direct ion-beam sputtering (IBS) of a carbon target at different substrate temperatures (room temperature-450 deg. C) and Ar/N{sub 2} sputtering gas mixtures. Additionally, the effect of concurrent nitrogen-ion assistance during the growth of CN{sub x} films by IBS was also investigated. The samples were analyzed by elastic recoil detection analysis (ERDA) and x-ray absorption near-edge spectroscopy (XANES). The ERDA results showed that significant nitrogen amount (up to 20 at. %) was incorporated in the films, without any other nitrogen source but the N{sub 2}-containing sputtering gas.more » The nitrogen concentration is proportional to the N{sub 2} content in the sputtering beam and no saturation limit is reached under the present working conditions. The film areal density derived from ERDA revealed a decrease in the amount of deposited material at increasing growth temperature, with a correlation between the C and N losses. The XANES results indicate that N atoms are efficiently incorporated into the carbon network and can be found in different bonding environments, such as pyridinelike, nitrilelike, graphitelike, and embedded N{sub 2} molecules. The contribution of molecular and pyridinelike nitrogen decreases when the temperature increases while the contribution of the nitrilelike nitrogen increases. The concurrent nitrogen ion assistance resulted in the significant increase of the nitrogen content in the film but it induced a further reduction of the deposited material. Additionally, the assisting ions inhibited the formation of the nitrilelike configurations while promoting nitrogen environments in graphitelike positions. The nitrogen incorporation and release mechanisms are discussed in terms of film growth precursors, ion bombardment effects, and chemical sputtering.« less

Porous, High Capacity Coatings for Solid Phase Microextraction by Sputtering.

PubMed

Diwan, Anubhav; Singh, Bhupinder; Roychowdhury, Tuhin; Yan, DanDan; Tedone, Laura; Nesterenko, Pavel N; Paull, Brett; Sevy, Eric T; Shellie, Robert A; Kaykhaii, Massoud; Linford, Matthew R

2016-02-02

We describe a new process for preparing porous solid phase microextraction (SPME) coatings by the sputtering of silicon onto silica fibers. The microstructure of these coatings is a function of the substrate geometry and mean free path of the silicon atoms, and the coating thickness is controlled by the sputtering time. Sputtered silicon structures on silica fibers were treated with piranha solution (a mixture of concd H2SO4 and 30% H2O2) to increase the concentration of silanol groups on their surfaces, and the nanostructures were silanized with octadecyldimethylmethoxysilane in the gas phase. The attachment of this hydrophobic ligand was confirmed by X-ray photoelectron spectroscopy and contact angle goniometry on model, planar silicon substrates. Sputtered silicon coatings adhered strongly to their surfaces, as they were able to pass the Scotch tape adhesion test. The extraction time and temperature for headspace extraction of mixtures of alkanes and alcohols on the sputtered fibers were optimized (5 min and 40 °C), and the extraction performances of SPME fibers with 1.0 or 2.0 μm of sputtered silicon were compared to those from a commercial 7 μm poly(dimethylsiloxane) (PDMS) fiber. For mixtures of alcohols, aldehydes, amines, and esters, the 2.0 μm sputtered silicon fiber yielded signals that were 3-9, 3-5, 2.5-4.5, and 1.5-2 times higher, respectively, than those of the commercial fiber. For the heavier alkanes (undecane-hexadecane), the 2.0 μm sputtered fiber yielded signals that were approximately 1.0-1.5 times higher than the commercial fiber. The sputtered fibers extracted low molecular weight analytes that were not detectable with the commercial fiber. The selectivity of the sputtered fibers appears to favor analytes that have both a hydrophobic component and hydrogen-bonding capabilities. No detectable carryover between runs was noted for the sputtered fibers. The repeatability (RSD%) for a fiber (n = 3) was less than 10% for all analytes tested

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

2017-04-01

He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

The Influence of Flankers on Race Categorization of Faces

PubMed Central

Sun, Hsin-Mei; Balas, Benjamin

2012-01-01

Context affects multiple cognitive and perceptual processes. In the present study, we asked how the context of a set of faces affected the perception of a target face’s race in two distinct tasks. In Experiments 1 and 2, participants categorized target faces according to perceived racial category (Black or White). In Experiment 1, the target face was presented alone, or with Black or White flanker faces. The orientation of flanker faces was also manipulated to investigate how face inversion effect interacts with the influences of flanker faces on the target face. The results showed that participants were more likely to categorize the target face as White when it was surrounded by inverted White faces (an assimilation effect). Experiment 2 further examined how different aspects of the visual context affect the perception of the target face by manipulating flanker faces’ shape and pigmentation as well as their orientation. The results showed that flanker faces’ shape and pigmentation affected the perception of the target face differently. While shape elicited a contrast effect, pigmentation appeared to be assimilative. These novel findings suggest that the perceived race of a face is modulated by the appearance of other faces and their distinct shape and pigmentation properties. However, the contrast and assimilation effects elicited by flanker faces’ shape and pigmentation may be specific to race categorization, since the same stimuli used in a delayed matching task (Experiment 3) revealed that flanker pigmentation induced a contrast effect on the perception of target pigmentation. PMID:22825930

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissig, B., E-mail: Benjamin.bissig@empa.ch; Jäger, T.; Tiwari, A. N.

2015-06-01

Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1}more » which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.« less

Angular and velocity distributions of tungsten sputtered by low energy argon ions

NASA Astrophysics Data System (ADS)

Marenkov, E.; Nordlund, K.; Sorokin, I.; Eksaeva, A.; Gutorov, K.; Jussila, J.; Granberg, F.; Borodin, D.

2017-12-01

Sputtering by ions with low near-threshold energies is investigated. Experiments and simulations are conducted for tungsten sputtering by low-energy, 85-200 eV Ar atoms. The angular distributions of sputtered particles are measured. A new method for molecular dynamics simulation of sputtering taking into account random crystallographic surface orientation is developed, and applied for the case under consideration. The simulations approximate experimental results well. At low energies the distributions acquire "butterfly-like" shape with lower sputtering yields for close to normal angles comparing to the cosine distribution. The energy distributions of sputtered particles were simulated. The Thompson distribution remains valid down to near-threshold 85 eV case.

Boron-rich plasma by high power impulse magnetron sputtering of lanthanum hexaboride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oks, Efim M.; Anders, Andre

2012-10-15

Boron-rich plasmas have been obtained using a LaB{sub 6} target in a high power impulse sputtering (HiPIMS) system. The presence of {sup 10}B{sup +}, {sup 11}B{sup +}, Ar{sup 2+}, Ar{sup +}, La{sup 2+}, and La{sup +} and traces of La{sup 3+}, {sup 12}C{sup +}, {sup 14}N{sup +}, and {sup 16}O{sup +} have been detected using an integrated mass and energy spectrometer. Peak currents as low as 20 A were sufficient to obtain plasma dominated by {sup 11}B{sup +} from a 5 cm planar magnetron. The ion energy distribution function for boron exhibits an energetic tail extending over several 10 eV,more » while argon shows a pronounced peak at low energy (some eV). This is in agreement with models that consider sputtering (B, La) and gas supply (from background and 'recycling'). Strong voltage oscillations develop at high current, greatly affecting power dissipation and plasma properties.« less

Tuning of the magnetization dynamics in as-sputtered FeCoSiN thin films by various sputtering gas pressures

NASA Astrophysics Data System (ADS)

Xu, Feng; Phuoc, N. N.; Zhang, Xiaoyu; Ma, Yungui; Chen, Xin; Ong, C. K.

2008-11-01

In this work, we investigate the influence of various sputtering gas pressures on the high-frequency magnetization dynamics in as-sputtered FeCoSiN granular thin films. The permeability spectra are measured with the shorted microstrip transmission-line perturbation method and analyzed with the Landau-Lifshitz-Gilbert equation. The dependence of the effective damping coefficient on the external fields is fitted with a power law. The measurement and fitting results show that both the effective and the intrinsic damping coefficients in the magnetization dynamics can be conveniently and effectively tuned by changing the sputtering gas pressure. The physical origin of the influences is suggested to be related to the stress in the films.

Depth resolution and preferential sputtering in depth profiling of sharp interfaces

NASA Astrophysics Data System (ADS)

Hofmann, S.; Han, Y. S.; Wang, J. Y.

2017-07-01

The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16-84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16-84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

NASA Technical Reports Server (NTRS)

Barghouty, Abdulmasser F.; Adams, James H., Jr.

2008-01-01

At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

Nanopatterning of swinging substrates by ion-beam sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, whichmore » have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.« less

Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

NASA Astrophysics Data System (ADS)

Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

2016-02-01

Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

NASA Astrophysics Data System (ADS)

Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

2003-10-01

Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Nylon-sputtered nanoparticles: fabrication and basic properties

NASA Astrophysics Data System (ADS)

Polonskyi, O.; Kylián, O.; Solař, P.; Artemenko, A.; Kousal, J.; Slavínská, D.; Choukourov, A.; Biederman, H.

2012-12-01

Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

Subliminal Face Emotion Processing: A Comparison of Fearful and Disgusted Faces.

PubMed

Khalid, Shah; Ansorge, Ulrich

2017-01-01

Prior research has provided evidence for (1) subcortical processing of subliminal facial expressions of emotion and (2) for the emotion-specificity of these processes. Here, we investigated if this is also true for the processing of the subliminal facial display of disgust. In Experiment 1, we used differently filtered masked prime faces portraying emotionally neutral or disgusted expressions presented prior to clearly visible target faces to test if the masked primes exerted an influence on target processing nonetheless. Whereas we found evidence for subliminal face congruence or priming effects, in particular, reverse priming by low spatial frequencies disgusted face primes, we did not find any support for a subcortical origin of the effect. In Experiment 2, we compared the influence of subliminal disgusted faces with that of subliminal fearful faces and demonstrated a behavioral performance difference between the two, pointing to an emotion-specific processing of the disgusted facial expressions. In both experiments, we also tested for the dependence of the subliminal emotional face processing on spatial attention - with mixed results, suggesting an attention-independence in Experiment 1 but not in Experiment 2 -, and we found perfect masking of the face primes - that is, proof of the subliminality of the prime faces. Based on our findings, we speculate that subliminal facial expressions of disgust could afford easy avoidance of these faces. This could be a unique effect of disgusted faces as compared to other emotional facial displays, at least under the conditions studied here.

Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

2013-06-01

Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

Microstructural and wear properties of sputtered carbides and silicides

NASA Technical Reports Server (NTRS)

Spalvins, T.

1977-01-01

Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling element bearing tests were performed with these sputtered films. Bearings sputtered with a duplex coating (0.1-micron-thick undercoating of Cr3Si2 and subsequently 0.6-micron coating of MoS2) produced marked improvement over straight MoS2 films.

The corrosivity and passivity of sputtered Mg-Ti alloys

DOE PAGES

Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; ...

2015-11-30

Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide filmmore » was formed on a sputtered Ti–Mg based alloy.« less

The new applications of sputtering and ion plating

NASA Technical Reports Server (NTRS)

Spalvins, T.

1977-01-01

The potential industrial applications of sputtering and ion plating are strictly governed by the unique features these methods possess. The outstanding features of each method, the resultant coating characteristics and the various sputtering modes and configurations are discussed. New, more complex coatings and deposits can be developed such as graded composition structures (metal-ceramic seals), laminated and dispersion strengthened composites which improve the mechanical properties and high temperature stability. Specific industrial areas where future effort of sputtering and ion plating will concentrate to develop intricate alloy or compound coatings and solve difficult problem areas are discussed.

Unified analytic representation of physical sputtering yield

NASA Astrophysics Data System (ADS)

Janev, R. K.; Ralchenko, Yu. V.; Kenmotsu, T.; Hosaka, K.

2001-03-01

Generalized energy parameter η= η( ɛ, δ) and normalized sputtering yield Ỹ(η) , where ɛ= E/ ETF and δ= Eth/ ETF, are introduced to achieve a unified representation of all available experimental and sputtering data at normal ion incidence. The sputtering data in the new Ỹ(η) representation retain their original uncertainties. The Ỹ(η) data can be fitted to a simple three-parameter analytic expression with an rms deviation of 32%, well within the uncertainties of original data. Both η and Ỹ(η) have correct physical behavior in the threshold and high-energy regions. The available theoretical data produced by the TRIM.SP code can also be represented by the same single analytic function Ỹ(η) with a similar accuracy.

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

2012-06-01

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

NASA Astrophysics Data System (ADS)

Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

2018-03-01

Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

Diagnostics of RF magnetron sputtering plasma for synthesizing transparent conductive Indium-Zinc-Oxide film

NASA Astrophysics Data System (ADS)

Ohta, Takayuki; Inoue, Mari; Takota, Naoki; Ito, Masafumi; Higashijima, Yasuhiro; Kano, Hiroyuki; den, Shoji; Yamakawa, Koji; Hori, Masaru

2009-10-01

Transparent conductive Oxide film has been used as transparent conducting electrodes of optoelectronic devices such as flat panel display, solar cells, and so on. Indium-Zinc-Oxide (IZO) has been investigated as one of promising alternatives Indium Tin Oxide film, due to amorphous, no nodule and so on. In order to control a sputtering process with highly precise, RF magnetron sputtering plasma using IZO composite target was diagnosed by absorption and emission spectroscopy. We have developed a multi-micro hollow cathode lamp which can emit simultaneous multi-atomic lines for monitoring Zn and In densities simultaneously. Zn and In densities were measured to be 10^9 from 10^10 cm-3 at RF power from 40 to 100 W, pressure of 5Pa, and Ar flow rate of 300 sccm. The emission intensities of Zn, In, InO, and Ar were also observed.

Tungsten-microdiamond composites for plasma facing components

NASA Astrophysics Data System (ADS)

Livramento, V.; Nunes, D.; Correia, J. B.; Carvalho, P. A.; Mardolcar, U.; Mateus, R.; Hanada, K.; Shohoji, N.; Fernandes, H.; Silva, C.; Alves, E.

2011-09-01

Tungsten is considered as one of promising candidate materials for plasma facing component in nuclear fusion reactors due to its resistance to sputtering and high melting point. High thermal conductivity is also a prerequisite for plasma facing components under the unique service environment of fusion reactor characterised by the massive heat load, especially in the divertor area. The feasibility of mechanical alloying of nanodiamond and tungsten, and the consolidation of the composite powders with Spark Plasma Sintering (SPS) was previously demonstrated. In the present research we report on the use of microdiamond instead of nanodiamond in such composites. Microdiamond is more favourable than nanodiamond in view of phonon transport performance leading to better thermal conductivity. However, there is a trade off between densification and thermal conductivity as the SPS temperature increases tungsten carbide formation from microdiamond is accelerated inevitably while the consolidation density would rise.

Measurement Of Hydrogen Capacities And Stability In Thin Films Of AlH Deposited By Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Dissanayake, A.; AlFaify, S.; Garratt, E.; Nandasiri, M. I.; Taibu, R.; Tecos, G.; Hamdan, N. M.; Kayani, A.

2011-06-01

Thin, hydrogenated aluminum hydride films were deposited on silicon substrates using unbalanced magnetron (UBM) sputtering of a high purity aluminum target under electrically grounded conditions. Argon was used as sputtering gas and hydrogenation was carried out by diluting the growth plasma with hydrogen. The effect of hydrogen partial pressure on the final concentration of trapped elements including hydrogen has been studied using ion beam analysis (IBA) techniques. Moreover, in-situ thermal stability of trapped hydrogen in the film was carried out using Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS) and Elastic Recoil Detection Analysis (ERDA). Microstructure of the film was investigated by SEM analysis. Hydrogen content in the thin films was found decreasing as the films were heated above 110 °C in vacuum.

A Closer Look at Solar Wind Sputtering of Lunar Surface Materials

NASA Technical Reports Server (NTRS)

Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Mansur, L.; Reinhold, C.

2008-01-01

Solar-wind induced potential sputtering of the lunar surface may be a more efficient erosive mechanism than the "standard" kinetic (or physical) sputtering. This is partly based on new but limited laboratory measurements which show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. The enhancements seen in the laboratory can be orders of magnitude for some surfaces and highly charged incident ions, but seem to depend very sensitively on the properties of the impacted surface in addition to the fluence, energy and charge of the impacting ion. For oxides, potential sputtering yields are markedly enhanced and sputtered species, especially hydrogen and light ions, show marked dependence on both charge and dose.

Modeling of hydrocarbon sputtering in Tore Supra

NASA Astrophysics Data System (ADS)

Hogan, J.; Gauthier, E.; Cambe, A.; Layet, J.-M.

2002-11-01

The use of carbon in fusion devices introduces problems of erosion and tritium retention which are related to chemical sputtering. The in-situ chemical sputtering yield of carbon has recently been measured in a well-diagnosed SOL plasma near the neutralizer plate in the Tore-Supra Outboard Pump Limiter. Methane and heavier hydrocarbon (C2DX and C3DY) emission has been measured in ohmic and lower hybrid heated discharges, using mass and optical molecular spectroscopy [1]. The Monte Carlo code BBQ has been used both to validate the method used to obtain the sputtering yields, and for direct comparison with available values reported for accelerator-based sputtering yields. A comparison with predicted surface temperature and particle flux dependence is also presented, for both CD4 and the heavier hydrocarbon yields. The particle flux dependence comparison is found to be complex, since changes in mean free path also accompany variation in particle flux. For the temperature dependence of methane erosion, the Roth annealing model is found to provide a better fit than the hydrogenation-moderated model. [1] A. Cambe, thesis, 2002; ORNL: Supported by U.S.DOE Contract DE-AC05-00OR22725

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Attention Capture by Faces

ERIC Educational Resources Information Center

Langton, Stephen R. H.; Law, Anna S.; Burton, A. Mike; Schweinberger, Stefan R.

2008-01-01

We report three experiments that investigate whether faces are capable of capturing attention when in competition with other non-face objects. In Experiment 1a participants took longer to decide that an array of objects contained a butterfly target when a face appeared as one of the distracting items than when the face did not appear in the array.…

Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

PubMed

Timilsina, Rajendra; Rack, Philip D

2013-12-13

A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1986-01-01

A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.

Roll-to-Roll sputtered ITO/Cu/ITO multilayer electrode for flexible, transparent thin film heaters and electrochromic applications

PubMed Central

Park, Sung-Hyun; Lee, Sang-Mok; Ko, Eun-Hye; Kim, Tae-Ho; Nah, Yoon-Chae; Lee, Sang-Jin; Lee, Jae Heung; Kim, Han-Ki

2016-01-01

We fabricate high-performance, flexible, transparent electrochromic (EC) films and thin film heaters (TFHs) on an ITO/Cu/ITO (ICI) multilayer electrode prepared by continuous roll-to-roll (RTR) sputtering of ITO and Cu targets. The RTR-sputtered ICI multilayer on a 700 mm wide PET substrate at room temperature exhibits a sheet resistance of 11.8 Ω/square and optical transmittance of 73.9%, which are acceptable for the fabrication of flexible and transparent EC films and TFHs. The effect of the Cu interlayer thickness on the electrical and optical properties of the ICI multilayer was investigated in detail. The bending and cycling fatigue tests demonstrate that the RTR-sputtered ICI multilayer was more flexible than a single ITO film because of high strain failure of the Cu interlayer. The flexible and transparent EC films and TFHs fabricated on the ICI electrode show better performances than reference EC films and TFHs with a single ITO electrode. Therefore, the RTR-sputtered ICI multilayer is the best substitute for the conventional ITO film electrode in order to realize flexible, transparent, cost-effective and large-area EC devices and TFHs that can be used as flexible and smart windows. PMID:27653830

Characterizations of the Core-Shell Structured MgB2/CARBON Fiber Synthesis by Rf-Sputtering and Thermal Evaporation

NASA Astrophysics Data System (ADS)

Park, Sung Chang; Lim, Yeong Jin; Lee, Tae-Keun; Kim, Cheol Jin

MgB2/carbon fibers have been synthesized by the combination of RF-sputtering of B and thermal evaporation of Mg, followed by co-evaporation. First, boron layer was deposited by RF-sputtering on the carbon fiber with average diameter of 7.1 μm. Later this coated layer of B was reacted with Mg vapor to transform into MgB2. Since the MgB2 reaction proceed with Mg diffusion into the boron layer, Mg vapor pressure and the diffusion time had to be controlled precisely to secure the complete reaction. Also the deposition rate of each element was controlled separately to obtain stoichiometric MgB2, since Mg was evaporated by thermal heating and B by sputtering system. The sintered B target was magnetron sputtered at the RF-power of ~200 W, which corresponded to the deposition rate of ~3.6 Å/s. With the deposition rate of B fixed, the vapor pressure of Mg was controlled by varying the temperature of tungsten boat with heating element control unit between 100 and 900°C. The MgB2 layers with the thickness of 200-950 nm could be obtained and occasionally MgO appeared as a second phase. Superconducting transition temperatures were measured around ~38 K depending on the deposition condition.

Subliminal Face Emotion Processing: A Comparison of Fearful and Disgusted Faces

PubMed Central

Khalid, Shah; Ansorge, Ulrich

2017-01-01

Prior research has provided evidence for (1) subcortical processing of subliminal facial expressions of emotion and (2) for the emotion-specificity of these processes. Here, we investigated if this is also true for the processing of the subliminal facial display of disgust. In Experiment 1, we used differently filtered masked prime faces portraying emotionally neutral or disgusted expressions presented prior to clearly visible target faces to test if the masked primes exerted an influence on target processing nonetheless. Whereas we found evidence for subliminal face congruence or priming effects, in particular, reverse priming by low spatial frequencies disgusted face primes, we did not find any support for a subcortical origin of the effect. In Experiment 2, we compared the influence of subliminal disgusted faces with that of subliminal fearful faces and demonstrated a behavioral performance difference between the two, pointing to an emotion-specific processing of the disgusted facial expressions. In both experiments, we also tested for the dependence of the subliminal emotional face processing on spatial attention – with mixed results, suggesting an attention-independence in Experiment 1 but not in Experiment 2 –, and we found perfect masking of the face primes – that is, proof of the subliminality of the prime faces. Based on our findings, we speculate that subliminal facial expressions of disgust could afford easy avoidance of these faces. This could be a unique effect of disgusted faces as compared to other emotional facial displays, at least under the conditions studied here. PMID:28680413

Ion energies in high power impulse magnetron sputtering with and without localized ionization zones

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yuchen; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720; Tanaka, Koichi

2015-03-23

High speed imaging of high power impulse magnetron sputtering discharges has revealed that ionization is localized in moving ionization zones but localization disappears at high currents for high yield targets. This offers an opportunity to study the effect ionization zones have on ion energies. We measure that ions have generally higher energies when ionization zones are present, supporting the concept that these zones are associated with moving potential humps. We propose that the disappearance of ionization zones is caused by an increased supply of atoms from the target which cools electrons and reduces depletion of atoms to be ionized.

Shape-memory properties in Ni-Ti sputter-deposited film

NASA Technical Reports Server (NTRS)

Busch, J. D.; Johnson, A. D.; Lee, C. H.; Stevenson, D. A.

1990-01-01

A Ni-Ti alloy, generically called nitinol, was prepared from sputtering targets of two different compositions on glass substrates using a dc magnetron source. The as-deposited films were amorphous in structure and did not exhibit a shape memory. The amorphous films were crystallized with a suitable annealing process, and the transformation properties were measured using differential scanning calorimetry. The annealed films demonstrated a strong shape-memory effect. Stress/strain measurements and physical manipulation were used to evaluate the shape recovery. These tests demonstrated sustained tensile stresses of up to 480 MPa in the high-temperature phase, and a characteristic plastic deformation in the low-temperature phase.

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

NASA Astrophysics Data System (ADS)

O'Brien, April; Villegas, Brendon; Gu, J. Y.

2009-01-01

Magnesium diboride (MgB 2) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB 2 thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature ( Tc), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest Tc of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate ( Ts) increased, Tc rose. However, the maximum Ts was limited due to the low magnesium sticking coefficient and thus the Tc value was limited as well. The highest Tc, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low Tc, did not have the well-developed MgB 2 grains while the films with higher Tc displayed the well-developed grains and smooth surface. Although the Tc of sputtered MgB 2 films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB 2 heterostructures using rather simple physical vapor deposition method such as sputtering.

Kinetic and Potential Sputtering of Lunar Regolith: Contribution of Solar-Wind Heavy Ions

NASA Technical Reports Server (NTRS)

Meyer, F. W.; Harris, P. R.; Meyer, H. M., III; Hijiazi, H.; Barghouty, A. F.

2013-01-01

Sputtering of lunar regolith by protons as well as solar-wind heavy ions is considered. From preliminary measurements of H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A AGGL lunar regolith simulant at solar wind velocities, and TRIM simulations of kinetic sputtering yields, the relative contributions of kinetic and potential sputtering contributions are estimated. An 80-fold enhancement of oxygen sputtering by Ar+ over same-velocity H+, and an additional x2 increase for Ar+9 over same-velocity Ar+ was measured. This enhancement persisted to the maximum fluences investigated is approximately 1016/cm (exp2). Modeling studies including the enhanced oxygen ejection by potential sputtering due to the minority heavy ion multicharged ion solar wind component, and the kinetic sputtering contribution of all solar wind constituents, as determined from TRIM sputtering simulations, indicate an overall 35% reduction of near-surface oxygen abundance. XPS analyses of simulant samples exposed to singly and multicharged Ar ions show the characteristic signature of reduced (metallic) Fe, consistent with the preferential ejection of oxygen atoms that can occur in potential sputtering of some metal oxides.

Lubrication with sputtered MoS2 films: Principles, operation, limitations

NASA Technical Reports Server (NTRS)

Spalvins, T.

1991-01-01

The present practices, limitations, and understanding of thin sputtered MoS2 films are reviewed. Sputtered MoS2 films can exhibit remarkable tribological properties such as ultralow friction coefficients (0.01) and enhanced wear lives (millions of cycles) when used in vacuum or dry air. To achieve these favorable tribological characteristics, the sputtering conditions during deposition must be optimized for adequate film adherence and appropriate structure (morphology) and composition.

Secondary ion formation during electronic and nuclear sputtering of germanium

NASA Astrophysics Data System (ADS)

Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

2018-06-01

Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

Magnetospheric ion sputtering and water ice grain size at Europa

NASA Astrophysics Data System (ADS)

Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

2013-03-01

We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

Structural and optical properties of gold-incorporated diamond-like carbon thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Majeed, Shahbaz; Siraj, K.; Naseem, S.; Khan, Muhammad F.; Irshad, M.; Faiz, H.; Mahmood, A.

2017-07-01

Pure and gold-doped diamond-like carbon (Au-DLC) thin films are deposited at room temperature by using RF magnetron sputtering in an argon gas-filled chamber with a constant flow rate of 100 sccm and sputtering time of 30 min for all DLC thin films. Single-crystal silicon (1 0 0) substrates are used for the deposition of pristine and Au-DLC thin films. Graphite (99.99%) and gold (99.99%) are used as co-sputtering targets in the sputtering chamber. The optical properties and structure of Au-DLC thin films are studied with the variation of gold concentration from 1%-5%. Raman spectroscopy, atomic force microscopy (AFM), Vickers hardness measurement (VHM), and spectroscopic ellipsometry are used to analyze these thin films. Raman spectroscopy indicates increased graphitic behavior and reduction in the internal stresses of Au-DLC thin films as the function of increasing gold doping. AFM is used for surface topography, which shows that spherical-like particles are formed on the surface, which agglomerate and form larger clusters on the surface by increasing the gold content. Spectroscopy ellipsometry analysis elucidates that the refractive index and extinction coefficient are inversely related and the optical bandgap energy is decreased with increasing gold content. VHM shows that gold doping reduces the hardness of thin films, which is attributed to the increase in sp2-hybridization.

Building Face Composites Can Harm Lineup Identification Performance

ERIC Educational Resources Information Center

Wells, Gary L.; Charman, Steve D.; Olson, Elizabeth A.

2005-01-01

Face composite programs permit eyewitnesses to build likenesses of target faces by selecting facial features and combining them into an intact face. Research has shown that these composites are generally poor likenesses of the target face. Two experiments tested the proposition that this composite-building process could harm the builder's memory…

Thin film deposition by electric and magnetic crossed-field diode sputtering. [Patent application

DOEpatents

Welch, K.M.

1975-04-04

Applying a coating of titanium nitride to a klystron window by means of a cross-field diode sputtering array is described. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent to a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate, and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thickness. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multifactoring under operating conditions of the components.

The effects of changing deposition conditions on the similarity of sputter-deposited fluorocarbon thin films to bulk PTFE

NASA Astrophysics Data System (ADS)

Zandona, Philip

Solid lubrication of space-borne mechanical components is essential to their survival and the continued human exploration of space. Recent discoveries have shown that PTFE when blended with alumina nanofillers exhibits greatly improved physical performance properties, with wear rates being reduced by several orders of magnitude. The bulk processes used to produce the PTFE-alumina blends are limiting. Co-sputter deposition of PTFE and a filler material overcomes several of these limitations by enabling the reduction of particle size to the atomic level and also by allowing for the even coating of the solid lubricant on relatively large areas and components. The goal of this study was to establish a baseline performance of the sputtered PTFE films as compared to the bulk material, and to establish deposition conditions that would result in the most bulk-like film possible. In order to coax change in the structure of the sputtered films, sputtering power and deposition temperature were increased independently. Further, post-deposition annealing was applied to half of the deposited film in an attempt to affect change in the film structure. Complications in the characterization process due to increasing film thickness were also examined. Bulk-like metrics for characterization processes the included Fourier transform infrared spectroscopy (FTIR), X-ray spectroscopy (XPS), nanoindentation via atomic force microscopy, and contact angle of water on surface measurements were established. The results of the study revealed that increasing sputtering power and deposition temperature resulted in an increase in the similarity between the fluorocarbon films and the bulk PTFE, at a cost of affecting the potential of the film thicknesses, either by affecting the deposition process directly, or by decreasing the longevity of the sputtering targets.

Microstructural and wear properties of sputtered carbides and silicides

NASA Technical Reports Server (NTRS)

Spalvins, T.

1977-01-01

Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling-element bearing tests were also performed with these sputtered films.

The Use of OXYGEN-18 in the Development of Methods for Controlled Sputter Deposition of High Critical Transition Temperature Material Thin Films of Predicted Composition and Good Uniformity

NASA Astrophysics Data System (ADS)

Tidrow, Steven Clay

Two primary concerns, in the sputter deposition of high T_{c} material films, are the prevention of oxygen deficiency in the films and the elimination of the negative ion effect. "Oxygen deficiency" occurs when the amount of oxygen incorporated into the film is less than the amount of oxygen required to form the superconducting material lattice. Oxygen deficiency is due to the volatile nature of oxygen. The negative ion effect occurs when an atom or molecule (typically oxygen) gains an extra electron, is accelerated away from the target and impinges upon a film being grown directly in front of the sputtering target. The impinging particle has enough energy to cause resputtering of the deposited film. The presence of Sr and to a greater extent Ba, may enhance the negative ion effect in these materials. However, it is oxygen which readily forms negative ions that is primarily responsible for the negative ion effect. Thus, oxygen must be given special attention in the sputter deposition of high T_{c} material films. A specially designed sputtering system is used to demonstrate that the negative ion effect can be reduced such that large uniform high T_{c} material films possessing predicted and repeated composition can be grown in an on-axis arrangement. Utilizing this same sputtering system and the volatile nature of oxygen, it is demonstrated that oxygen processes occurring in the chamber during growth of high T_ {c} material films can be investigated using the tracer ^{18}O. In particular, it is shown that ^{18}O can be utilized as a tool for (1) investigating the negative ion effect, (2) investigating oxygen incorporation into high T_{c} material films, (3) investigating oxygen incorporation into the target, (4) tailoring films for oxygen migration and interface investigations and (5) tailoring films for the other specific oxygen investigations. Such sputtering systems that utilize the tracer ^{18}O are necessary for systematic growth of high T_ {c} material films

Category search speeds up face-selective fMRI responses in a non-hierarchical cortical face network.

PubMed

Jiang, Fang; Badler, Jeremy B; Righi, Giulia; Rossion, Bruno

2015-05-01

The human brain is extremely efficient at detecting faces in complex visual scenes, but the spatio-temporal dynamics of this remarkable ability, and how it is influenced by category-search, remain largely unknown. In the present study, human subjects were shown gradually-emerging images of faces or cars in visual scenes, while neural activity was recorded using functional magnetic resonance imaging (fMRI). Category search was manipulated by the instruction to indicate the presence of either a face or a car, in different blocks, as soon as an exemplar of the target category was detected in the visual scene. The category selectivity of most face-selective areas was enhanced when participants were instructed to report the presence of faces in gradually decreasing noise stimuli. Conversely, the same regions showed much less selectivity when participants were instructed instead to detect cars. When "face" was the target category, the fusiform face area (FFA) showed consistently earlier differentiation of face versus car stimuli than did the "occipital face area" (OFA). When "car" was the target category, only the FFA showed differentiation of face versus car stimuli. These observations provide further challenges for hierarchical models of cortical face processing and show that during gradual revealing of information, selective category-search may decrease the required amount of information, enhancing and speeding up category-selective responses in the human brain. Copyright © 2015 Elsevier Ltd. All rights reserved.

Energy spectrum of sputtered uranium

NASA Technical Reports Server (NTRS)

Weller, R. A.; Tombrello, T. A.

1977-01-01

The fission track technique for detecting uranium 235 was used in conjunction with a mechanical time-of-flight spectrometer to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E to the -1.77 power for E is approximately greater than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the ramdom collision cascade model of sputtering.

Continuous Sputter Deposition Coating of Long Monofilaments

DTIC Science & Technology

2014-04-01

sectional view of sample 1. Using SEM, the copper coated monofilament was observed to be smooth with little to no indications of flaking or cracked...monofilament. The magnetron sputter deposition (MSD) process was used to apply copper coatings on the order of 10–100 nanometers thick onto both nylon...of monofilaments. Though only copper coatings are discussed in this report, the system could also be used to apply a variety of sputtered metal or

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

NASA Astrophysics Data System (ADS)

Falub, Claudiu V.; Rohrmann, Hartmut; Bless, Martin; Meduňa, Mojmír; Marioni, Miguel; Schneider, Daniel; Richter, Jan H.; Padrun, Marco

2017-05-01

Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8" Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100) nm thick magnetic layers and (2-20) nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ˜(7-120) Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency), while the coercivity was kept low, ˜(0.05-0.9) Oe. The alignment of the easy axis (EA) on the 8" wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM), X-ray reflectivity (XRR) with reciprocal space mapping (RSM) and magneto-optical Kerr effect (MOKE) measurements.

Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.

Here, we demonstrate mobilities of >45 cm 2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO 2, instead of the more conventional 8–10 wt. %, and had varying ZrO 2 content from 0 to 3 wt. %, with a subsequent reduction in In 2O 3 content. Moreover, these films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discoveredmore » for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. Our result is attributed to the reduced concentration of SnO 2. The addition of ZrO 2 yielded the highest mobilities at >55 cm 2/V s and the films showed a modest increase in optical transmission with increasing Zr-content.« less

Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.

The authors demonstrate mobilities of >45 cm{sup 2}/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO{sub 2}, instead of the more conventional 8–10 wt. %, and had varying ZrO{sub 2} content from 0 to 3 wt. %, with a subsequent reduction in In{sub 2}O{sub 3} content. These films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions.more » However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. This result is attributed to the reduced concentration of SnO{sub 2}. The addition of ZrO{sub 2} yielded the highest mobilities at >55 cm{sup 2}/V s and the films showed a modest increase in optical transmission with increasing Zr-content.« less

Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr

DOE PAGES

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.; ...

2016-01-19

Here, we demonstrate mobilities of >45 cm 2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO 2, instead of the more conventional 8–10 wt. %, and had varying ZrO 2 content from 0 to 3 wt. %, with a subsequent reduction in In 2O 3 content. Moreover, these films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discoveredmore » for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. Our result is attributed to the reduced concentration of SnO 2. The addition of ZrO 2 yielded the highest mobilities at >55 cm 2/V s and the films showed a modest increase in optical transmission with increasing Zr-content.« less

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

NASA Astrophysics Data System (ADS)

Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

2014-12-01

Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials

NASA Astrophysics Data System (ADS)

Bhattarai, Gyanendra; Dhungana, Shailesh; Nordell, Bradley J.; Caruso, Anthony N.; Paquette, Michelle M.; Lanford, William A.; King, Sean W.

2018-05-01

Analytical expressions describing ion-induced sputter or etch processes generally relate the sputter yield to the surface atomic binding energy (Usb) for the target material. While straightforward to measure for the crystalline elemental solids, Usb is more complicated to establish for amorphous and multielement materials due to composition-driven variations and incongruent sublimation. In this regard, we show that for amorphous multielement materials, the ion-driven yield can instead be better understood via a consideration of mechanical rigidity and network topology. We first demonstrate a direct relationship between Usb, bulk modulus, and ion sputter yield for the elements, and then subsequently prove our hypothesis for amorphous multielement compounds by demonstrating that the same relationships exist between the reactive ion etch (RIE) rate and nanoindentation Young's modulus for a series of a -Si Nx :H and a -Si OxCy :H thin films. The impact of network topology is further revealed via application of the Phillips-Thorpe theory of topological constraints, which directly relates the Young's modulus to the mean atomic coordination () for an amorphous solid. The combined analysis allows the trends and plateaus in the RIE rate to be ultimately reinterpreted in terms of the atomic structure of the target material through a consideration of . These findings establish the important underlying role of mechanical rigidity and network topology in ion-solid interactions and provide additional considerations for the design and optimization of radiation-hard materials in nuclear and outer space environments.

Non-uniform Erosion and Surface Evolution of Plasma-Facing Materials for Electric Propulsion

NASA Astrophysics Data System (ADS)

Matthes, Christopher Stanley Rutter

A study regarding the surface evolution of plasma-facing materials is presented. Experimental efforts were performed in the UCLA Pi Facility, designed to explore the physics of plasma-surface interactions. The influence of micro-architectured surfaces on the effects of plasma sputtering is compared with the response of planar samples. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. This result is quantified using a QCM to demonstrate the evolution of surface features and the corresponding influence on the instantaneous sputtering yield. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is found to be roughly 1 of the 2 corresponding value of flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22+/-8%, converging to 0.4+/-8% at high fluence. Although the yield is dependent on the initial surface structure, it is shown to be transient, reaching a steady-state value that is independent of initial surface conditions. A continuum model of surface evolution resulting from sputtering, deposition and surface diffusion is also derived to resemble the damped Kuramoto-Sivashinsky (KS) equation of non-linear dynamics. Linear stability analysis of the evolution equation provides an estimate of the selected wavelength, and its dependence on the ion energy and angle of incidence. The analytical results are confirmed by numerical simulations of the equation with a Fast Fourier Transform method. It is shown that for an initially flat surface, small perturbations lead to the evolution of a selected surface pattern that has nano- scale wavelength. When the surface is initially patterned by other means, the final resulting pattern is a competition between the "templated" pattern and the "self-organized" structure. Potential future routes of research are also

Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

NASA Astrophysics Data System (ADS)

Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

2018-01-01

Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

Sputtering of sodium on the planet Mercury

NASA Technical Reports Server (NTRS)

Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

1986-01-01

It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

Visual Search Efficiency is Greater for Human Faces Compared to Animal Faces

PubMed Central

Simpson, Elizabeth A.; Mertins, Haley L.; Yee, Krysten; Fullerton, Alison; Jakobsen, Krisztina V.

2015-01-01

The Animate Monitoring Hypothesis proposes that humans and animals were the most important categories of visual stimuli for ancestral humans to monitor, as they presented important challenges and opportunities for survival and reproduction; however, it remains unknown whether animal faces are located as efficiently as human faces. We tested this hypothesis by examining whether human, primate, and mammal faces elicit similarly efficient searches, or whether human faces are privileged. In the first three experiments, participants located a target (human, primate, or mammal face) among distractors (non-face objects). We found fixations on human faces were faster and more accurate than primate faces, even when controlling for search category specificity. A final experiment revealed that, even when task-irrelevant, human faces slowed searches for non-faces, suggesting some bottom-up processing may be responsible for the human face search efficiency advantage. PMID:24962122

On the sputter alteration of regoliths of outer solar system bodies

NASA Technical Reports Server (NTRS)

Hapke, Bruce

1987-01-01

Several processes that are expected to occur when the porous regoliths of outer solar system bodies (without atmospheres) are subjected to energetic ion bombardment are discussed. The conclusions reached in much of the literature addressing sputtering are quantitatively or qualitatively incorrect because effects of soil porosity have been neglected. It is shown theoretically and experimentally that porosity reduces the effective sputtering yield of a soil by more than an order of magnitude. Between 90 and 97% of the sputtered atoms are trapped within the regolith, where they are factionated by differential desorption. Experiments indicate that more volatile species have higher desorption probabilities. This process is the most important way in which alteration of chemical and optical properties occurs when a regolith is sputtered. When a basic silicate soil is irradiated these effects lead to sputter-deposited films enriched in metallic iron, while O, Na and K are preferentially lost. The Na and K are present in the atmosphere above the sputtered silicate in quantities much greater than their abundances in the regolith. Icy regoliths of SO2 should be enriched in elemental S and/or S2O. This prediction is supported by the probable identification of S2O and polysulfur oxide bands in the IR spectra of H-sputtered SO2 reported by Moore. When porous mixtures of water, ammonia and methane frosts are sputtered, the loss of H and surface reactions of C, N and O in the deposits should produce complex hydrocarbons and carbohydrates, some of which may be quite dark. Such reactions may have played a role in the formation of the matrix material of carbonaceous chondrites prior to agglomeration.

Comparison of the BCI Performance between the Semitransparent Face Pattern and the Traditional Face Pattern.

PubMed

Cheng, Jiao; Jin, Jing; Wang, Xingyu

2017-01-01

Brain-computer interface (BCI) systems allow users to communicate with the external world by recognizing the brain activity without the assistance of the peripheral motor nervous system. P300-based BCI is one of the most common used BCI systems that can obtain high classification accuracy and information transfer rate (ITR). Face stimuli can result in large event-related potentials and improve the performance of P300-based BCI. However, previous studies on face stimuli focused mainly on the effect of various face types (i.e., face expression, face familiarity, and multifaces) on the BCI performance. Studies on the influence of face transparency differences are scarce. Therefore, we investigated the effect of semitransparent face pattern (STF-P) (the subject could see the target character when the stimuli were flashed) and traditional face pattern (F-P) (the subject could not see the target character when the stimuli were flashed) on the BCI performance from the transparency perspective. Results showed that STF-P obtained significantly higher classification accuracy and ITR than those of F-P ( p < 0.05).

Synthesis and Characterization of Molybdenum (Mo) Thin Films Using DC-Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Pandharkar, Subhash M.; Rondiya, Sachin R.; Rokade, Avinash V.; Gabhale, Bharat B.; Pathan, Habib M.; Jadkar, Sandesh R.

2018-03-01

In present work, we report synthesis of Mo thin films by DC-magnetron sputtering method. The structural, optical, morphological and electrical properties were investigated as a function of target-to-substrate distance. From the results, it is evident that with increase in target-to-substrate distance the thickness of films decreases while its sheet resistance and electrical resistivity increases, which is confirmed by van der Pauw method. Low angle XRD analysis revealed that with increase in target-to-substrate distance preferred orientation of Mo crystallites changes from (211) to (110) and its size decreases. The FE-SEM analysis revealed a significant change in surface morphology with increase in target-to-substrate distance. UV-Visible spectroscopy analysis showed that Mo films deposited at high target-to-substrate distance have more reflection than those deposited at lower target-to-substrate. Finally, adhesion test was performed using scotch hatch tape adhesion test which show all Mo films have excellent adhesion over the entire range of target-to-substrate distance studied. The employment of such Mo films as back contact can be useful to improve efficiency of CZTS solar cells.

Preparation of magnetron sputtered ZrO2 films on Si for gate dielectric application

NASA Astrophysics Data System (ADS)

Kondaiah, P.; Mohan Rao, G.; Uthanna, S.

2012-11-01

Zirconium oxide (ZrO2) thin films were deposited on to p - Si and quartz substrates by sputtering of zirconium target at an oxygen partial pressure of 4x10-2 Pa and sputter pressure of 0.4 Pa by using DC reactive magnetron sputtering technique. The effect of annealing temperature on structural, optical, electrical and dielectric properties of the ZrO2 films was systematically studied. The as-deposited films were mixed phases of monoclinic and orthorhombic ZrO2. As the annealing temperature increased to 1073 K, the films were transformed in to single phase orthorhombic ZrO2. Fourier transform infrared studies conform the presence of interfacial layer between Si and ZrO2. The optical band gap and refractive index of the as-deposited films were 5.82 eV and 1.81. As the annealing temperature increased to 1073 K the optical band gap and refractive index increased to 5.92 eV and 2.10 respectively. The structural changes were influenced the capacitance-voltage and current-voltage characteristics of Al/ZrO2/p-Si capacitors. The dielectric constant was increased from 11.6 to 24.5 and the leakage current was decreased from 1.65×10-7 to 3.30×10-9 A/ cm2 for the as-deposited and annealed at 1073 K respectively.

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

Building face composites can harm lineup identification performance.

PubMed

Wells, Gary L; Charman, Steve D; Olson, Elizabeth A

2005-09-01

Face composite programs permit eyewitnesses to build likenesses of target faces by selecting facial features and combining them into an intact face. Research has shown that these composites are generally poor likenesses of the target face. Two experiments tested the proposition that this composite-building process could harm the builder's memory for the face. In Experiment 1 (n = 150), the authors used 50 different faces and found that the building of a composite reduced the chances that the person could later identify the original face from a lineup when compared with no composite control conditions or with yoked composite-exposure control conditions. In Experiment 2 (n = 200), the authors found that this effect generalized to a simulated-crime video, but mistaken identifications from target-absent lineups were not inflated by composite building. Copyright 2005 APA, all rights reserved.

Face shape and face identity processing in behavioral variant fronto-temporal dementia: A specific deficit for familiarity and name recognition of famous faces.

PubMed

De Winter, François-Laurent; Timmers, Dorien; de Gelder, Beatrice; Van Orshoven, Marc; Vieren, Marleen; Bouckaert, Miriam; Cypers, Gert; Caekebeke, Jo; Van de Vliet, Laura; Goffin, Karolien; Van Laere, Koen; Sunaert, Stefan; Vandenberghe, Rik; Vandenbulcke, Mathieu; Van den Stock, Jan

2016-01-01

Deficits in face processing have been described in the behavioral variant of fronto-temporal dementia (bvFTD), primarily regarding the recognition of facial expressions. Less is known about face shape and face identity processing. Here we used a hierarchical strategy targeting face shape and face identity recognition in bvFTD and matched healthy controls. Participants performed 3 psychophysical experiments targeting face shape detection (Experiment 1), unfamiliar face identity matching (Experiment 2), familiarity categorization and famous face-name matching (Experiment 3). The results revealed group differences only in Experiment 3, with a deficit in the bvFTD group for both familiarity categorization and famous face-name matching. Voxel-based morphometry regression analyses in the bvFTD group revealed an association between grey matter volume of the left ventral anterior temporal lobe and familiarity recognition, while face-name matching correlated with grey matter volume of the bilateral ventral anterior temporal lobes. Subsequently, we quantified familiarity-specific and name-specific recognition deficits as the sum of the celebrities of which respectively only the name or only the familiarity was accurately recognized. Both indices were associated with grey matter volume of the bilateral anterior temporal cortices. These findings extent previous results by documenting the involvement of the left anterior temporal lobe (ATL) in familiarity detection and the right ATL in name recognition deficits in fronto-temporal lobar degeneration.

Carbon Back Sputter Modeling for Hall Thruster Testing

NASA Technical Reports Server (NTRS)

Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John Tamin

2016-01-01

Lifetime requirements for electric propulsion devices, including Hall Effect thrusters, are continually increasing, driven in part by NASA's inclusion of this technology in it's exploration architecture. NASA will demonstrate high-power electric propulsion system on the Solar Electric Propulsion Technology Demonstration Mission (SEP TDM). The Asteroid Redirect Robotic mission is one candidate SEP TDM, which is projected to require tens of thousands of thruster life. As thruster life is increased, for example through the use of improved magnetic field designs, the relative influence of facility effects increases. One such effect is the sputtering and redeposition, or back sputter, of facility materials by the high energy thruster plumes. In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) project, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Center's Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 1 micron/kh in a fully carbon-lined chamber. A more detailed numerical Monte Carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values on the order of 1.5 - 2 micron/kh at 600 V and 12.5 kW.

Contributions of solar-wind induced potential sputtering to the lunar surface erosion rate and it's exosphere

NASA Astrophysics Data System (ADS)

Alnussirat, S. T.; Barghouty, A. F.; Edmunson, J. E.; Sabra, M. S.; Rickman, D. L.

2018-04-01

Sputtering of lunar regolith by solar-wind protons and heavy ions with kinetic energies of about 1 keV/amu is an important erosive process that affects the lunar surface and exosphere. It plays an important role in changing the chemical composition and thickness of the surface layer, and in introducing material into the exosphere. Kinetic sputtering is well modeled and understood, but understanding of mechanisms of potential sputtering has lagged behind. In this study we differentiate the contributions of potential sputtering from the standard (kinetic) sputtering in changing the chemical composition and erosion rate of the lunar surface. Also we study the contribution of potential sputtering in developing the lunar exosphere. Our results show that potential sputtering enhances the total characteristic sputtering erosion rate by about 44%, and reduces sputtering time scales by the same amount. Potential sputtering also introduces more material into the lunar exosphere.

Whiskers, cones and pyramids created in sputtering by ion bombardment

NASA Technical Reports Server (NTRS)

Wehner, G. K.

1979-01-01

A thorough study of the role which foreign atoms play in cone formation during sputtering of metals revealed many experimental facts. Two types of cone formation were distinquished, deposit cones and seed cones. Twenty-six combinations of metals for seed cone formation were tested. The sputtering yield variations with composition for combinations which form seed cones were measured. It was demonstrated that whisker growth becomes a common occurrence when low melting point material is sputter deposited on a hot nonsputtered high melting point electrode.

Beneficial effect of Cu on Ti-Nb-Ta-Zr sputtered uniform/adhesive gum films accelerating bacterial inactivation under indoor visible light.

PubMed

Alhussein, Akram; Achache, Sofiane; Deturche, Regis; Sanchette, Frederic; Pulgarin, Cesar; Kiwi, John; Rtimi, Sami

2017-04-01

This article presents the evidence for the significant effect of copper accelerating the bacterial inactivation on Ti-Nb-Ta-Zr (TNTZ) sputtered films on glass up to a Cu content of 8.3 at.%. These films were deposited by dc magnetron co-sputtering of an alloy target Ti-23Nb-0.7Ta-2Zr (at.%) and a Cu target. The fastest bacterial inactivation of E. coli on this later TNTZ-Cu surface proceeded within ∼75min. The films deposited by magnetron sputtering are chemically homogenous. The film roughness evaluated by atomic force spectroscopy (AFM) on the TNTZ-Cu 8.3 at.% Cu sample presented an RMS-value of 20.1nm being the highest RMS of any Cu-sputtered TNTZ sample. The implication of the RMS value found for this sample leading to the fastest interfacial bacterial inactivation kinetics is also discussed. Values for the Young's modulus and hardness are reported for the TNTZ films in the presence of various Cu-contents. Evaluation of the bacterial inactivation kinetics of E. coli under low intensity actinic hospital light and in the dark was carried out. The stable repetitive bacterial inactivation was consistent with the extremely low Cu-ion release from the samples of 0.4 ppb. Evidence is presented by the bacterial inactivation dependence on the applied light intensity for the intervention of Cu as semiconductor CuO during the bacterial inactivation at the TNTZ-Cu interface. The mechanism of CuO-intervention under light is suggested based on the pH/and potential changes registered during bacterial disinfection. Copyright © 2017 Elsevier B.V. All rights reserved.

Development of sputtered techniques for thrust chambers

NASA Technical Reports Server (NTRS)

Mullaly, J. R.; Hecht, R. J.; Schmid, T. E.; Torrey, C. T.

1975-01-01

Techniques and materials were developed and evaluated for the fabrication and coating of advanced, long life, regeneratively cooled thrust chambers. Materials were analyzed as fillers for sputter application of OFHC copper as a closeout layer to channeled inner structures; of the materials evaluated, aluminum was found to provide the highest bond strength and to be the most desirable for chamber fabrication. The structures and properties were investigated of thick sputtered OFHC copper, 0.15 Zr-Cu, Al2O3,-Cu, and SiC-Cu. Layered structures of OFHC copper and 0.15 Zr-Cu were investigated as means of improving chamber inner wall fatigue life. The evaluation of sputtered Ti-5Al-2.5Sn, NASA IIb-11, aluminum and Al2O3-Al alloys as high strength chamber outer jackets was performed. Techniques for refurbishing degraded thrust chambers with OFHC copper and coating thrust chambers with protective ZrO2 and graded ZrO2-copper thermal barrier coatings were developed.

Kinetic and potential sputtering of an anorthite-like glassy thin film

DOE PAGES

Hijazi, H.; Bannister, M. E.; Meyer, H. M.; ...

2017-07-28

In this paper, we present measurements of He + and He +2 ion-induced sputtering of an anorthite-like thin film at a fixed solar wind-relevant impact energy of ~0.5 keV/amu using a quartz crystal microbalance approach (QCM) for determination of total absolute sputtering yields. He +2 ions are the most abundant multicharged ions in the solar wind, and increased sputtering by these ions in comparison to equivelocity He + ions is expected to have the biggest effect on the overall sputtering efficiency of solar wind impact on the Moon. These measurements indicate an almost 70% increase of the sputtering yield formore » doubly charged incident He ions compared to that for same velocity He + impact (14.6 amu/ion for He +2 vs. 8.7 amu/ion for He+). Using a selective sputtering model, the new QCM results presented here, together with previously published results for Ar +q ions and SRIM results for the relevant kinetic-sputtering yields, the effect due to multicharged-solar-wind-ion impact on local near-surface modification of lunar anorthite-like soil is explored. It is shown that the multicharged-solar-wind component leads to a more pronounced and significant differentiation of depleted and enriched surface elements as well as a shortening of the timescale over which such surface-compositional modifications might occur in astrophysical settings. Additionally, to validate previous and future determinations of multicharged-ion-induced sputtering enhancement for those cases where the QCM approach cannot be used, relative quadrupole mass spectrometry (QMS)-based measurements are presented for the same anorthite-like thin film as were investigated by QCM, and their suitability and limitations for charge state-enhanced yield measurements are discussed.« less

Kinetic and potential sputtering of an anorthite-like glassy thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hijazi, H.; Bannister, M. E.; Meyer, H. M.

In this paper, we present measurements of He + and He +2 ion-induced sputtering of an anorthite-like thin film at a fixed solar wind-relevant impact energy of ~0.5 keV/amu using a quartz crystal microbalance approach (QCM) for determination of total absolute sputtering yields. He +2 ions are the most abundant multicharged ions in the solar wind, and increased sputtering by these ions in comparison to equivelocity He + ions is expected to have the biggest effect on the overall sputtering efficiency of solar wind impact on the Moon. These measurements indicate an almost 70% increase of the sputtering yield formore » doubly charged incident He ions compared to that for same velocity He + impact (14.6 amu/ion for He +2 vs. 8.7 amu/ion for He+). Using a selective sputtering model, the new QCM results presented here, together with previously published results for Ar +q ions and SRIM results for the relevant kinetic-sputtering yields, the effect due to multicharged-solar-wind-ion impact on local near-surface modification of lunar anorthite-like soil is explored. It is shown that the multicharged-solar-wind component leads to a more pronounced and significant differentiation of depleted and enriched surface elements as well as a shortening of the timescale over which such surface-compositional modifications might occur in astrophysical settings. Additionally, to validate previous and future determinations of multicharged-ion-induced sputtering enhancement for those cases where the QCM approach cannot be used, relative quadrupole mass spectrometry (QMS)-based measurements are presented for the same anorthite-like thin film as were investigated by QCM, and their suitability and limitations for charge state-enhanced yield measurements are discussed.« less

Kinetic and potential sputtering of an anorthite-like glassy thin film

NASA Astrophysics Data System (ADS)

Hijazi, H.; Bannister, M. E.; Meyer, H. M.; Rouleau, C. M.; Meyer, F. W.

2017-07-01

In this paper, we present measurements of He+ and He+2 ion-induced sputtering of an anorthite-like thin film at a fixed solar wind-relevant impact energy of 0.5 keV/amu using a quartz crystal microbalance approach (QCM) for determination of total absolute sputtering yields. He+2 ions are the most abundant multicharged ions in the solar wind, and increased sputtering by these ions in comparison to equivelocity He+ ions is expected to have the biggest effect on the overall sputtering efficiency of solar wind impact on the Moon. Our measurements indicate an almost 70% increase of the sputtering yield for doubly charged incident He ions compared to that for same velocity He+ impact (14.6 amu/ion for He+2 vs. 8.7 amu/ion for He+). Using a selective sputtering model, the new QCM results presented here, together with previously published results for Ar+q ions and SRIM results for the relevant kinetic-sputtering yields, the effect due to multicharged-solar-wind-ion impact on local near-surface modification of lunar anorthite-like soil is explored. It is shown that the multicharged-solar-wind component leads to a more pronounced and significant differentiation of depleted and enriched surface elements as well as a shortening of the timescale over which such surface-compositional modifications might occur in astrophysical settings. In addition, to validate previous and future determinations of multicharged-ion-induced sputtering enhancement for those cases where the QCM approach cannot be used, relative quadrupole mass spectrometry (QMS)-based measurements are presented for the same anorthite-like thin film as were investigated by QCM, and their suitability and limitations for charge state-enhanced yield measurements are discussed.

Attractive faces temporally modulate visual attention

PubMed Central

Nakamura, Koyo; Kawabata, Hideaki

2014-01-01

Facial attractiveness is an important biological and social signal on social interaction. Recent research has demonstrated that an attractive face captures greater spatial attention than an unattractive face does. Little is known, however, about the temporal characteristics of visual attention for facial attractiveness. In this study, we investigated the temporal modulation of visual attention induced by facial attractiveness by using a rapid serial visual presentation. Fourteen male faces and two female faces were successively presented for 160 ms, respectively, and participants were asked to identify two female faces embedded among a series of multiple male distractor faces. Identification of a second female target (T2) was impaired when a first target (T1) was attractive compared to neutral or unattractive faces, at 320 ms stimulus onset asynchrony (SOA); identification was improved when T1 was attractive compared to unattractive faces at 640 ms SOA. These findings suggest that the spontaneous appraisal of facial attractiveness modulates temporal attention. PMID:24994994

Deposition and characterization of magnetron sputtered bcc tantalum

NASA Astrophysics Data System (ADS)

Patel, Anamika

The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot propellant gases and the mechanical damage caused by the motion of launching projectiles. Electro-plated chromium is presently most commonly used for this purpose; however, it is considered to be carcinogenic in its hexavalent form. Tantalum is being investigated as non-toxic alternative to chromium and also because of its superior protective properties in these extreme environments. DC magnetron sputtering was chosen for this investigation of tantalum coatings on steel substrates because it is a versatile industrial proven process for deposition of metals. Sputter deposited Ta films can have two crystallographic structures: (1) body center cubic (bcc) phase, characterized by high toughness and high ductility and (2) a tetragonal beta phase characterized by brittleness and a tendency to fail under stress. It was found in this work that the bcc Ta coatings on steel can be obtained reliably by either of two methods: (1) depositing Ta on a submicron, stoichiometric TaN seed layer reactively sputtered on unheated steel and (2) depositing Ta directly on steel heated above a critical temperature. For argon sputtering gas this critical temperature was found to be 400°C at a pressure of 5 mtorr. With the heavier krypton gas, this critical temperature is reduced to 350°C. X-ray diffraction (XRD) was used to investigate the structure of tantalum and nitride films, and the composition of the nitride films was measured by nuclear reaction analyses (NRA), which were used to study in detail the enhancement of the bcc phase of Ta on steel. The scratch adhesion tests performed with a diamond hemispherical tip of radius 200 mum

The effect of face patch microstimulation on perception of faces and objects.

PubMed

Moeller, Sebastian; Crapse, Trinity; Chang, Le; Tsao, Doris Y

2017-05-01

What is the range of stimuli encoded by face-selective regions of the brain? We asked how electrical microstimulation of face patches in macaque inferotemporal cortex affects perception of faces and objects. We found that microstimulation strongly distorted face percepts and that this effect depended on precise targeting to the center of face patches. While microstimulation had no effect on the percept of many non-face objects, it did affect the percept of some, including non-face objects whose shape is consistent with a face (for example, apples) as well as somewhat facelike abstract images (for example, cartoon houses). Microstimulation even perturbed the percept of certain objects that did not activate the stimulated face patch at all. Overall, these results indicate that representation of facial identity is localized to face patches, but activity in these patches can also affect perception of face-compatible non-face objects, including objects normally represented in other parts of inferotemporal cortex.

Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

PubMed

Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

2016-08-01

Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016. © 2015 Wiley Periodicals, Inc.

Is the N170 for faces cognitively penetrable? Evidence from repetition priming of Mooney faces of familiar and unfamiliar persons.

PubMed

Jemel, Boutheina; Pisani, Michèle; Calabria, Marco; Crommelinck, Marc; Bruyer, Raymond

2003-07-01

Impoverished images of faces, two-tone Mooney faces, severely impair the ability to recognize to whom the face pertains. However, previously seeing the corresponding face in a clear format helps fame-judgments to Mooney faces. In the present experiment, we sought to demonstrate that enhancement in the perceptual encoding of Mooney faces results from top-down effects, due to previous activation of familiar face representation. Event-related potentials (ERPs) were obtained for target Mooney images of familiar and unfamiliar faces preceded by clear pictures portraying either the same photo (same photo prime), or a different photo of the same person (different photo prime) or a new unfamiliar face (no-prime). In agreement with previous findings the use of primes was effective in enhancing the recognition of familiar faces in Mooney images; this priming effect was larger in the same than in different photo priming condition. ERP data revealed that the amplitude of the N170 face-sensitive component was smaller when elicited by familiar than by unfamiliar face targets, and for familiar face targets primed by the same than by different photos (a graded priming effect). Because the priming effect was restricted to familiar faces and occurred at the peak of the N170, we suggest that the early perceptual stage of face processing is likely to be penetrable by the top-down effect due to the activation of face representations within the face recognition system.

Full-Process Computer Model of Magnetron Sputter, Part I: Test Existing State-of-Art Components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walton, C C; Gilmer, G H; Wemhoff, A P

2007-09-26

This work is part of a larger project to develop a modeling capability for magnetron sputter deposition. The process is divided into four steps: plasma transport, target sputter, neutral gas and sputtered atom transport, and film growth, shown schematically in Fig. 1. Each of these is simulated separately in this Part 1 of the project, which is jointly funded between CMLS and Engineering. The Engineering portion is the plasma modeling, in step 1. The plasma modeling was performed using the Object-Oriented Particle-In-Cell code (OOPIC) from UC Berkeley [1]. Figure 2 shows the electron density in the simulated region, using magneticmore » field strength input from experiments by Bohlmark [2], where a scale of 1% is used. Figures 3 and 4 depict the magnetic field components that were generated using two-dimensional linear interpolation of Bohlmark's experimental data. The goal of the overall modeling tool is to understand, and later predict, relationships between parameters of film deposition we can change (such as gas pressure, gun voltage, and target-substrate distance) and key properties of the results (such as film stress, density, and stoichiometry.) The simulation must use existing codes, either open-source or low-cost, not develop new codes. In part 1 (FY07) we identified and tested the best available code for each process step, then determined if it can cover the size and time scales we need in reasonable computation times. We also had to determine if the process steps are sufficiently decoupled that they can be treated separately, and identify any research-level issues preventing practical use of these codes. Part 2 will consider whether the codes can be (or need to be) made to talk to each other and integrated into a whole.« less

Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

NASA Astrophysics Data System (ADS)

Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping; Sun, Hong; Huang, Nan

2013-10-01

The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO2 substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO2, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

Development of an inductively coupled impulse sputtering source for coating deposition

NASA Astrophysics Data System (ADS)

Loch, Daniel Alexander Llewellyn

In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

Influence of Continuous and Discontinuous Depositions on Properties of Ito Films Prepared by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Aiempanakit, K.; Rakkwamsuk, P.; Dumrongrattana, S.

Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω·cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

Characterization of Magnetron Sputtered Copper-Nickel Thin Film and Alloys

DTIC Science & Technology

2016-09-01

ARL-TR-7783 ● SEP 2016 US Army Research Laboratory Characterization of Magnetron Sputtered Copper-Nickel Thin Films and Alloys...TR-7783 ● SEP 2016 US Army Research Laboratory Characterization of Magnetron Sputtered Copper-Nickel Thin Films and Alloys by Eugene...

Sputtering phenomena of discharge chamber components in a 30-cm diameter Hg ion thruster

NASA Technical Reports Server (NTRS)

Mantenieks, M. A.; Rawlin, V. K.

1976-01-01

Sputtering and deposition rates were measured for discharge chamber components of a 30-cm diameter mercury ion thruster. It was found that sputtering rates of the screen grid and cathode baffle were strongly affected by geometry of the baffle holder. Sputtering rates of the baffle and screen grid were reduced to 80 and 125 A/hr, respectively, by combination of appropriate geometry and materials selections. Sputtering rates such as these are commensurate with thruster lifetimes of 15,000 hours or more. A semiempirical sputtering model showed good agreement with the measured values.

β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

2015-06-01

β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

Carbon Back Sputter Modeling for Hall Thruster Testing

NASA Technical Reports Server (NTRS)

Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John T.

2016-01-01

In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) program, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Centers Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 3 4 mkhour in a fully carbon-lined chamber. A more detailed numerical monte carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values, on the order of 1.5- 2 microns/khour.

Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

NASA Astrophysics Data System (ADS)

Fortier, Jean-Philippe

objectives in mind. To start, we had to find a first recipe to obtain our first samples of the material. Using the literature as a starting point, several samples were deposited by magnetron sputtering while improving certain deposition conditions as well as varying influential deposition parameters. Once the oxide obtained, it was necessary to optimize the parameters not only to render thermochromic coatings with the highest possible quality, but also to determine each parameter's sensitivity. Characterization techniques such as microscopy, spectroscopy, ellipsometry, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, x-ray diffraction and finally, time-of-flight secondary ion mass spectrometry were used to analyze different aspects of our multiple samples. Indeed, to mention only the ix most relevant observations, we were able to confirm that the microstructure, composition, most relevant observations, we were able to confirm that the microstructure, composition, crystallinity and film thickness have a significant impact on the coating's thermochromic behavior as well as on its optical properties. As a result, the oxygen concentration and the thickness had to be optimized and the deposition temperature, maximized. Reactive poisoning of the sputtering target is also a phenomenon that needs to be considered during deposition. Then, our sputtering target and substrate cleaning procedures were improved following certain observations. VO2 was equally found to be sensitive to small temperature gradients in addition of being highly dependent upon high deposition temperatures. Finally, the use of different substrates has subsequently shown that the film composition and microstructure can be altered. After mastering the deposition of thin VO2 films, we explored another path that we found to be quite innovative. A relatively new deposition technique called HiPIMS was put to the test based on its new characteristics, leading to believe that it had the

Sputtering characteristics, crystal structures, and transparent conductive properties of TiOxNy films deposited on α-Al2O3(0 0 0 1) and glass substrates

NASA Astrophysics Data System (ADS)

Akazawa, Housei

2012-12-01

Adding N2 gas during reactive sputtering of a Ti target prevented the target surface from being severely poisoned by oxygen atoms and sustained a high deposition rate for titanium oxynitride films under metal-mode-like sputtering conditions. With progress in the degree of oxidization, films deposited onto a glass substrate varied from TiO1-xNx having a face-centered cubic (fcc) structure to TiO2-xNx having an anatase structure. Titanium oxynitride films deposited on an Al2O3(0 0 0 1) substrate were epitaxial with major orientations toward the (1 1 1) and (2 0 0) directions for fcc-TiO1-xNx and (1 1 2) for anatase-TiO2-xNx. Intermediately oxidized films between TiO1-xNx and TiO2-xNx were amorphous on the glass substrate but crystallized into a Magneli phase, TinO(N)2n-1, on the Al2O3(0 0 0 1) substrate. Partially substituting oxygen in TiO2 with nitrogen as well as continuously irradiating the growing film surface with a Xe plasma stream preferentially formed anatase rather than rutile. However, the occupation of anion sites with enough oxygen rather than nitrogen was the required condition for anatase crystals to form. The transparent conductive properties of epitaxial TiO2-xNx films on Al2O3(0 0 0 1) were superior to those of microcrystalline films on the glass substrate. Since resistivity and optical transmittance of TiOxNy films vary continuously with changing N2 flow rate, their transparent conductive properties can be controlled more easily than TiOx. Nb5+ ions could be doped as donors in TiO2-xNx anatase crystals.

Optimization of process parameters for RF sputter deposition of tin-nitride thin-films

NASA Astrophysics Data System (ADS)

Jangid, Teena; Rao, G. Mohan

2018-05-01

Radio frequency Magnetron sputtering technique was employed to deposit Tin-nitride thin films on Si and glass substrate at different process parameters. Influence of varying parameters like substrate temperature, target-substrate distance and RF power is studied in detail. X-ray diffraction method is used as a key technique for analyzing the changes in the stoichiometric and structural properties of the deposited films. Depending on the combination of deposition parameters, crystalline as well as amorphous films were obtained. Pure tin-nitride thin films were deposited at 15W RF power and 600°C substrate temperature with target-substrate distance fixed at 10cm. Bandgap value of 1.6 eV calculated for the film deposited at optimum process conditions matches well with reported values.

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

PubMed Central

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

Electronic sputtering of vitreous SiO2: Experimental and modeling results

NASA Astrophysics Data System (ADS)

Toulemonde, M.; Assmann, W.; Trautmann, C.

2016-07-01

The irradiation of solids with swift heavy ions leads to pronounced surface and bulk effects controlled by the electronic energy loss of the projectiles. In contrast to the formation of ion tracks in bulk materials, the concomitant emission of atoms from the surface is much less investigated. Sputtering experiments with different ions (58Ni, 127I and 197Au) at energies around 1.2 MeV/u were performed on vitreous SiO2 (a-SiO2) in order to quantify the emission rates and compare them with data for crystalline SiO2 quartz. Stoichiometry of the sputtering process was verified by monitoring the thickness decreases of a thin SiO2 film deposited on a Si substrate. Angular distributions of the emitted atoms were measured by collecting sputtered atoms on arc-shaped Cu catcher foils. Subsequent analysis of the number of Si atoms deposited on the catcher foils was quantified by elastic recoil detection analysis providing differential as well as total sputtering yields. Compared to existing data for crystalline SiO2, the total sputtering yields for vitreous SiO2 are by a factor of about five larger. Differences in the sputtering rate and track formation characteristics between amorphous and crystalline SiO2 are discussed within the frame of the inelastic thermal spike model.

Growing LaAlO{sub 3}/SrTiO{sub 3} interfaces by sputter deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dildar, I. M.; Neklyudova, M.; Xu, Q.

Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO{sub 3} on SrTiO{sub 3} substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter windowmore » exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.« less

Face recognition increases during saccade preparation.

PubMed

Lin, Hai; Rizak, Joshua D; Ma, Yuan-ye; Yang, Shang-chuan; Chen, Lin; Hu, Xin-tian

2014-01-01

Face perception is integral to human perception system as it underlies social interactions. Saccadic eye movements are frequently made to bring interesting visual information, such as faces, onto the fovea for detailed processing. Just before eye movement onset, the processing of some basic features, such as the orientation, of an object improves at the saccade landing point. Interestingly, there is also evidence that indicates faces are processed in early visual processing stages similar to basic features. However, it is not known whether this early enhancement of processing includes face recognition. In this study, three experiments were performed to map the timing of face presentation to the beginning of the eye movement in order to evaluate pre-saccadic face recognition. Faces were found to be similarly processed as simple objects immediately prior to saccadic movements. Starting ∼ 120 ms before a saccade to a target face, independent of whether or not the face was surrounded by other faces, the face recognition gradually improved and the critical spacing of the crowding decreased as saccade onset was approaching. These results suggest that an upcoming saccade prepares the visual system for new information about faces at the saccade landing site and may reduce the background in a crowd to target the intended face. This indicates an important role of pre-saccadic eye movement signals in human face recognition.

Characterization of polycrystalline nickel cobaltite nanostructures prepared by DC plasma magnetron co-sputtering for gas sensing applications

NASA Astrophysics Data System (ADS)

Hammadi, Oday A.; Naji, Noor E.

2018-03-01

In this work, a gas sensor is fabricated from polycrystalline nickel cobaltite nano films deposited on transparent substrates by closed-field unbalanced dual-magnetrons (CFUBDM) co-sputtering technique. Two targets of nickel and cobalt are mounted on the cathode of discharge system and co-sputtered by direct current (DC) argon discharge plasma in presence of oxygen as a reactive gas. The total gas pressure is 0.5 mbar and the mixing ratio of Ar:O2 gases is 5:1. The characterization measurements performed on the prepared films show that their transmittance increases with the incident wavelength, the polycrystalline structure includes 5 crystallographic planes, the average particle size is about 35 nm, the electrical conductivity is linearly increasing with increasing temperature, and the activation energy is about 0.41 eV. These films show high sensitivity to ethanol vapor.

Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

NASA Astrophysics Data System (ADS)

Stark, C. R.; Diver, D. A.

2018-04-01

Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced. Aim. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering. Methods: Using example sub-stellar atmospheres from DRIFT-PHOENIX, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition. Results: Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is ≳10-4. Loosely bound grains with surface binding energies of the order of 0.1-1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering. Conclusions: The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres.

Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, S.; Greczynski, G.; Jensen, J.

2012-07-01

Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies.more » Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.« less

On the sputter alteration of regoliths of outer solar system bodies

NASA Technical Reports Server (NTRS)

Hapke, B.

1986-01-01

The present theoretical and experimental consideration of processes that are expected to occur when the porous regoliths on outer solar system bodies lacking atmospheres are subjected to energetic ion bombardment indicates that porosity reduces the effective sputtering yield of a soil by more than an order of magnitude. Between 90 and 97 percent of the sputtered atoms are trapped within the regolith and subjected to differential desorption fractionation, which emerges as the most important path for the alteration of chemical and optical properties in sputtered regoliths. Sputtered porous mixtures of water, ammonia and methane frosts suffer a loss of H, and surface reactions of C, N, and O that should yield complex hydrocarbons and carbohydrates; such reactions may have played a role in the formation of carbonaceous chondrites' matrix material prior to agglomeration.

More efficient rejection of happy than of angry face distractors in visual search.

PubMed

Horstmann, Gernot; Scharlau, Ingrid; Ansorge, Ulrich

2006-12-01

In the present study, we examined whether the detection advantage for negative-face targets in crowds of positive-face distractors over positive-face targets in crowds of negative faces can be explained by differentially efficient distractor rejection. Search Condition A demonstrated more efficient distractor rejection with negative-face targets in positive-face crowds than vice versa. Search Condition B showed that target identity alone is not sufficient to account for this effect, because there was no difference in processing efficiency for positive- and negative-face targets within neutral crowds. Search Condition C showed differentially efficient processing with neutral-face targets among positive- or negative-face distractors. These results were obtained with both a within-participants (Experiment 1) and a between-participants (Experiment 2) design. The pattern of results is consistent with the assumption that efficient rejection of positive (more homogenous) distractors is an important determinant of performance in search among (face) distractors.

An ionization region model of the reactive Ar/O2 high power impulse magnetron sputtering discharge

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Lundin, D.; Brenning, N.; Raadu, M. A.; Huo, Chunqing; Minea, T. M.

2016-12-01

A new reactive ionization region model (R-IRM) is developed to describe the reactive Ar/O2 high power impulse magnetron sputtering (HiPIMS) discharge with a titanium target. It is then applied to study the temporal behavior of the discharge plasma parameters such as electron density, the neutral and ion composition, the ionization fraction of the sputtered vapor, the oxygen dissociation fraction, and the composition of the discharge current. We study and compare the discharge properties when the discharge is operated in the two well established operating modes, the metal mode and the poisoned mode. Experimentally, it is found that in the metal mode the discharge current waveform displays a typical non-reactive evolution, while in the poisoned mode the discharge current waveform becomes distinctly triangular and the current increases significantly. Using the R-IRM we explore the current increase and find that when the discharge is operated in the metal mode Ar+ and Ti+ -ions contribute most significantly (roughly equal amounts) to the discharge current while in the poisoned mode the Ar+ -ions contribute most significantly to the discharge current and the contribution of O+ -ions, Ti+ -ions, and secondary electron emission is much smaller. Furthermore, we find that recycling of atoms coming from the target, that are subsequently ionized, is required for the current generation in both modes of operation. From the R-IRM results it is found that in the metal mode self-sputter recycling dominates and in the poisoned mode working gas recycling dominates. We also show that working gas recycling can lead to very high discharge currents but never to a runaway. It is concluded that the dominating type of recycling determines the discharge current waveform.

Effect of Oblique-Angle Sputtered ITO Electrode in MAPbI3 Perovskite Solar Cell Structures.

PubMed

Lee, Kun-Yi; Chen, Lung-Chien; Wu, Yu-June

2017-10-03

This investigation reports on the characteristics of MAPbI 3 perovskite films on obliquely sputtered ITO/glass substrates that are fabricated with various sputtering times and sputtering angles. The grain size of a MAPbI 3 perovskite film increases with the oblique sputtering angle of ITO thin films from 0° to 80°, indicating that the surface properties of the ITO affect the wettability of the PEDOT:PSS thin film and thereby dominates the number of perovskite nucleation sites. The optimal power conversion efficiency (Eff) is achieved 11.3% in a cell with an oblique ITO layer that was prepared using a sputtering angle of 30° for a sputtering time of 15 min.

Enhanced saturation of sputtered amorphous SiN film frameworks using He- and Ne-Penning effects

NASA Astrophysics Data System (ADS)

Sugimoto, Iwao; Nakano, Satoko; Kuwano, Hiroki

1994-06-01

Optical emission spectroscopy reveals that helium and neon gases enhance the nitridation reactivity of the nitrogen plasma by Penning effects during magnetron sputtering of the silicon target. These excited nitrogen plasmas promote the saturation of frameworks of the resultant silicon nitride films. X-ray photoelectron spectroscopy, electron spin resonance, and x-ray diffraction analyses provide insight into the structure of these films, and thermal desorption mass spectroscopy reveals the behavior of volatile species in these films.

Magnetron Sputtered Molybdenum Oxide for Application in Polymers Solar Cells

NASA Astrophysics Data System (ADS)

Sendova-Vassileva, M.; Dikov, Hr; Vitanov, P.; Popkirov, G.; Gergova, R.; Grancharov, G.; Gancheva, V.

2016-10-01

Thin films of molybdenum oxide were deposited by radio frequency (RF) magnetron sputtering in Ar from a MoO3 target at different deposition power on glass and silicon substrates. The thickness of the films was determined by profilometer measurements and by ellipsometry. The films were annealed in air at temperatures between 200 and 400°C in air. The optical transmission and reflection spectra were measured. The conductivity of the as deposited and annealed films was determined. The crystal structure was probed by Raman spectroscopy. The oxidation state of the surface was studied by X-ray photoelectron spectroscopy (XPS) spectroscopy. The deposition technique described above was used to experiment with MoOx as a hole transport layer (HTL) in polymer solar cells with bulk hetrojunction active layer, deposited by spin coating. The performance of these layers was compared with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), which is the standard material used in this role. The measured current-voltage characteristics of solar cells with the structure glass/ITO/HTL/Poly(3-hexyl)thiophene (P3HT):[6,6]-phenyl-C61- butyric acid methyl ester (PCBM)/Al demonstrate that the studied MoOx layer is a good HTL and leads to comparable characteristics to those with PEDOT:PSS. On the other hand the deposition by magnetron sputtering guarantees reliable and repeatable HTLs.

Does Temporal Integration of Face Parts Reflect Holistic Processing?

PubMed Central

Cheung, Olivia S.; Richler, Jennifer J.; Phillips, W. Stewart; Gauthier, Isabel

2011-01-01

We examined whether temporal integration of face parts reflects holistic processing or response interference. Participants learned to name two faces “Fred” and two “Bob”. At test, top and bottom halves of different faces formed composites and were presented briefly separated in time. Replicating prior findings (Singer & Sheinberg, 2006), naming of the target halves for aligned composites was slowed when the irrelevant halves were from faces with a different name compared to that from the original face. However, no interference was observed when the irrelevant halves had identical names as the target halves but came from different learned faces, arguing against a true holistic effect. Instead, response interference was obtained when the target halves briefly preceded the irrelevant halves. Experiment 2 confirmed a double-dissociation between holistic processing vs. response interference for intact faces vs. temporally separated face halves, suggesting that simultaneous presentation of facial information is critical for holistic processing. PMID:21327378

Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

NASA Astrophysics Data System (ADS)

Ward, Logan

The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate

Swift heavy-ions induced sputtering in BaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Singh, Udai B.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

2013-11-01

In our present experiment a series of barium fluoride thin films of different thicknesses have been deposited by electron beam evaporation technique at room temperature on silicon substrates. The effect of film thickness on the electronic sputter yield of polycrystalline BaF2 thin films has been reported in the present work. Power law for sputtered species collected on catcher grids has also been reported for film of lowest thickness. Sputtering has been performed by 100 MeV Au+28 ions. Atomic force microscopy (AFM) has been done to check the surface morphology of pristine samples. Glancing angle X-ray diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was done to determine the areal concentration of Ba and F atoms in the films. A reduction in the sputter yield of BaF2 films with the increase in film thickness has been observed from RBS results. The thickness dependence sputtering is explained on the basis of thermal spike and the energy confinement of the ions in the smaller grains. Also transmission electron microscopy (TEM) of the catchers shows a size distribution of sputtered species with values of power law exponent 1/2 and 3/2 for two fluences 5 × 1011 and 1 × 1012 ions/cm2, respectively.

Studies on RF sputtered (WO{sub 3}){sub 1-x} (V{sub 2}O{sub 5}){sub x} thin films for smart window applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meenakshi, M.; Perumal, P.; Sivakumar, R.

2016-05-23

V{sub 2}O{sub 5} doped WO{sub 3} targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO{sub 3}){sub 1-x} (V{sub 2}O{sub 5}){sub x} were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Influence of hysteresis effect on properties of reactively sputtered TiAlSiN films

NASA Astrophysics Data System (ADS)

Gao, Fangyuan; Li, Guang; Xia, Yuan

2018-02-01

This article reports on the hysteresis effect in TiAlSiN films prepared by an intermediate frequency magnetron. The discharge voltages for different metallic alloy targets varying with nitrogen flow rate were systematically investigated, under a constant pressure provided by sputtering gas. The hysteresis transition was introduced by the sudden changes in sputtering rate, fraction of compound formation, phase composition and mechanical properties. The result was shown that: the initial growth rate aD in metallic mode was 4 times faster than that in supersaturated state. The optimized stoichiometric TiAl(Si)Nx=1 films containing 50 at.% N were founded in the transition region. The discussion on the plasma characteristics caused by hysteresis process showed that the TiN(111) texture could be increased by applying higher particle bombarding energy. The hardness of TiAlSiN film was strongly influenced by the orientation, which depended on the loading history of nitrogen. The superior TiAlSiN film with hardness 33 GPa could be prepared during the nitrogen unloading for same nitrogen flow rates.

Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

PubMed

Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

2016-01-01

This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

High rate reactive sputtering of MoN(x) coatings

NASA Technical Reports Server (NTRS)

Rudnik, Paul J.; Graham, Michael E.; Sproul, William D.

1991-01-01

High rate reactive sputtering of MoN(x) films was performed using feedback control of the nitorgen partial pressure. Coatings were made at four different target powers: 2.5, 5.0, 7.5 and 10 kW. No hysteresis was observed in the nitrogen partial pressure vs. flow plot, as is typically seen for the Ti-N system. Four phases were determined by X-ray diffraction: molybdenum, Mo-N solid solution, Beta-Mo2N and gamma-Mo2N. The hardness of the coatings depended upon composition, substrate bias, and target power. The phases present in the hardest films differed depending upon deposition parameters. For example, the Beta-Mo2N phase was hardest (load 25 gf) at 5.0 kW with a value of 3200 kgf/sq mm, whereas the hardest coatings at 10 kW were the gamma-Mo2N phase (3000 kgf/sq mm). The deposition rate generally decreased with increasing nitrogen partial pressure, but there was a range of partial pressures where the rate was relatively constant. At a target power of 5.0 kW, for example, the deposition rates were 3300 A/min for a N2 partial pressure of 0.05 - 1.0 mTorr.

Influence of in-situ ion-beam sputter cleaning on the conditioning effect of vacuum gaps

NASA Astrophysics Data System (ADS)

Kobayashi, Shinichi; Kojima, Hiroyuki; Saito, Yoshio

1994-05-01

An ion beam sputtering technique was used to clean the electrode surfaces of vacuum gaps. Ions of the sputtering gas were irradiated by means of an ion gun in a vacuum chamber attached to a breakdown measurement chamber. By providing in situ ion-beam sputter cleaning, this system makes it possible to make measurements free from contamination due to exposure to the air. The sputtering gas was He or Ar, and the electrodes were made of oxygen-free copper (purity more than 99.96%). An impulse voltage with the wave form of 64/700 microsecond(s) was applied to the test gap, and the pressure in the breakdown measurement chamber at the beginning of breakdown tests was 1.3 X 10-8 Pa. These experiments showed that ion-beam sputter cleaning results in higher breakdown fields after a repetitive breakdown conditioning procedure, and that He is more effective in improving hold- off voltages after the conditioning (under the same ion current density, the breakdown field was 300 MV/m for He sputtering and 200 MV/m for Ar sputtering). The breakdown fields at the first voltage application after the sputtering cleaning, on the other hand, were not improved.

Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shayestehaminzadeh, Seyedmohammad, E-mail: ses30@hi.is, E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.

2015-11-15

This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasmamore » in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.« less

The Face in the Crowd Effect Unconfounded: Happy Faces, Not Angry Faces, Are More Efficiently Detected in Single- and Multiple-Target Visual Search Tasks

ERIC Educational Resources Information Center

Becker, D. Vaughn; Anderson, Uriah S.; Mortensen, Chad R.; Neufeld, Samantha L.; Neel, Rebecca

2011-01-01

Is it easier to detect angry or happy facial expressions in crowds of faces? The present studies used several variations of the visual search task to assess whether people selectively attend to expressive faces. Contrary to widely cited studies (e.g., Ohman, Lundqvist, & Esteves, 2001) that suggest angry faces "pop out" of crowds, our review of…

Ion beam and dual ion beam sputter deposition of tantalum oxide films

NASA Astrophysics Data System (ADS)

Cevro, Mirza; Carter, George

1994-11-01

Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

NASA Astrophysics Data System (ADS)

Cevro, Mirza; Carter, George

1995-02-01

Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

Nanostructured Ti-Ta thin films synthesized by combinatorial glancing angle sputter deposition

NASA Astrophysics Data System (ADS)

Motemani, Yahya; Khare, Chinmay; Savan, Alan; Hans, Michael; Paulsen, Alexander; Frenzel, Jan; Somsen, Christoph; Mücklich, Frank; Eggeler, Gunther; Ludwig, Alfred

2016-12-01

Ti-Ta alloys are attractive materials for applications in actuators as well as biomedical implants. When fabricated as thin films, these alloys can potentially be employed as microactuators, components for micro-implantable devices and coatings on surgical implants. In this study, Ti100-x Ta x (x = 21, 30) nanocolumnar thin films are fabricated by glancing angle deposition (GLAD) at room temperature using Ti73Ta27 and Ta sputter targets. Crystal structure, morphology and microstructure of the nanostructured thin films are systematically investigated by XRD, SEM and TEM, respectively. Nanocolumns of ˜150-160 nm in width are oriented perpendicular to the substrate for both Ti79Ta21 and Ti70Ta30 compositions. The disordered α″ martensite phase with orthorhombic structure is formed in room temperature as-deposited thin films. The columns are found to be elongated small single crystals which are aligned perpendicular to the (20\\bar{4}) and (204) planes of α″ martensite, indicating that the films’ growth orientation is mainly dominated by these crystallographic planes. Laser pre-patterned substrates are utilized to obtain periodic nanocolumnar arrays. The differences in seed pattern, and inter-seed distances lead to growth of multi-level porous nanostructures. Using a unique sputter deposition geometry consisting of Ti73Ta27 and Ta sputter sources, a nanocolumnar Ti-Ta materials library was fabricated on a static substrate by a co-deposition process (combinatorial-GLAD approach). In this library, a composition spread developed between Ti72.8Ta27.2 and Ti64.4Ta35.6, as confirmed by high-throughput EDX analysis. The morphology over the materials library varies from well-isolated nanocolumns to fan-like nanocolumnar structures. The influence of two sputter sources is investigated by studying the resulting column angle on the materials library. The presented nanostructuring methods including the use of the GLAD technique along with pre-patterning and a

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering.

PubMed

Gago, R; Jaafar, M; Palomares, F J

2018-07-04

The surface morphology of molybdenum silicide (Mo x Si 1-x ) films has been studied after low-energy Ar + ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si 1-x films with compositions below, equal and above the MoSi 2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si 1-x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si 1-x . Contrary to silicon, Mo x Si 1-x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si 1-x films with 1 keV Ar + at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si 1-x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si 1-x under grazing incidence is also attributed to the dominance of

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

NASA Astrophysics Data System (ADS)

Gago, R.; Jaafar, M.; Palomares, F. J.

2018-07-01

The surface morphology of molybdenum silicide (Mo x Si1‑x ) films has been studied after low-energy Ar+ ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si1‑x films with compositions below, equal and above the MoSi2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si1‑x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si1‑x . Contrary to silicon, Mo x Si1‑x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si1‑x films with 1 keV Ar+ at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si1‑x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si1‑x under grazing incidence is also attributed to the dominance

Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

2015-04-01

In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

Structural characterization of precious-mean quasiperiodic Mo/V single-crystal superlattices grown by dual-target magnetron sputtering

NASA Astrophysics Data System (ADS)

Birch, J.; Severin, M.; Wahlström, U.; Yamamoto, Y.; Radnoczi, G.; Riklund, R.; Sundgren, J.-E.; Wallenberg, L. R.

1990-05-01

A class of quasiperiodic superlattice structures, which can be generated by the concurrent inflation rule A-->AmB and B-->A (where m=positive integer), has been studied both theoretically and experimentally. Given that the ratios between the thicknesses of the two superlattice building blocks, A and B, are chosen to be γ(m)=[m+(m2+4)1/2]/2 (known as the ``precious means''), then the x-ray- and electron-diffraction peak positions are analytically found to be located at the wave vectors q=2πΛ-1r[γ(m)]k, where r and k are integers and Λ is an average superlattice wavelength. The analytically obtained results have been compared to experimental results from single-crystalline Mo/V superlattice structures, generated with m=1, 2, and 3. The superlattices were grown by dual-target dc-magnetron sputtering on MgO(001) substrates kept at 700 °C. X-ray diffraction (XRD) and selected-area electron diffraction (SAED) showed that the analytical model mentioned above predicts the peak positions of the experimental XRD and SAED spectra with a very high accuracy. Furthermore, numerical calculations of the diffraction intensities based on a kinematical model of diffraction showed good agreement with the experimental data for all three cases. In addition to a direct verification of the quasiperiodic modulation, both conventional and high-resolution cross-sectional transmission electron microscopy (XTEM) showed that the superlattices are of high crystalline quality with sharp interfaces. Based on lattice resolution images, the width of the interfaces was determined to be less than two (002) lattice-plane spacings (~=0.31 nm).

Observing Planets and Small Bodies in Sputtered High Energy Atom (SHEA) Fluxes

NASA Technical Reports Server (NTRS)

Milillo, A.; Orsini, S.; Hsieh, K. C.; Baragiola, R.; Fama, M.; Johnson, R.; Mura, A.; Plainaki, Ch.; Sarantos, M.; Cassidy, T. A.;

Study of electronic sputtering of CaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Khan, Saif A.; Kumar, Tanuj; Tripathi, Ambuj; Avasthi, D. K.; Pandey, Avinash C.

2014-01-01

In the present work thin films of CaF2 deposited on Si substrate by electron beam evaporation have been investigated for swift heavy ions induced sputtering and surface modifications. Glancing angle X-ray Diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was performed to determine the sputter yield of CaF2 and a decrease in sputter yield has been observed with increase in film thickness. Thermal spike model has been applied to explain this. The confinement of energy in the grains having size smaller than the electron mean free path (λ) results in a higher sputtering yield. Atomic force microscopy (AFM) studies of irradiated CaF2 thin films show formation of cracks on film surface at a fluence of 5 × 1012 ions/cm2. Also RBS results confirm the removal of film from the surface and more exposure of substrate with increasing dose of ions.

Plasmonic behaviour of sputtered Au nanoisland arrays

NASA Astrophysics Data System (ADS)

Tvarožek, V.; Szabó, O.; Novotný, I.; Kováčová, S.; Škriniarová, J.; Šutta, P.

2017-02-01

The specificity of the formation of Au sputtered nanoisland arrays (NIA) on a glass substrate or on a ZnO thin film doped by Ga is demonstrated. Statistical analysis of morphology images (SEM, AFM) exhibited the Log-normal distribution of the size (area) of nanoislands-their modus AM varied from 8 to 328 nm2 depending on the sputtering power density, which determined the nominal thicknesses in the range of 2-8 nm. Preferential polycrystalline texture (111) of Au NIA increased with the power density and after annealing. Transverse localised surface plasmonic resonance (LSPR; evaluated by transmission UV-vis spectroscopy) showed the red shift of the extinction peaks (Δl ≤ 100 nm) with an increase of the nominal thickness, and the blue shift (Δλ ≤ -65 nm) after annealing of Au NIA. The plasmonic behaviour of Au NIA was described by modification of a size-scaling universal model using the nominal thin film thickness as a technological scaling parameter. Sputtering of a Ti intermediate adhesive ultrathin film between the glass substrate and gold improves the adhesion of Au nanoislands as well as supporting the formation of more defined Au NIA structures of smaller dimensions.

Rigid Facial Motion Influences Featural, But Not Holistic, Face Processing

PubMed Central

Xiao, Naiqi; Quinn, Paul C.; Ge, Liezhong; Lee, Kang

2012-01-01

We report three experiments in which we investigated the effect of rigid facial motion on face processing. Specifically, we used the face composite effect to examine whether rigid facial motion influences primarily featural or holistic processing of faces. In Experiments 1, 2, and 3, participants were first familiarized with dynamic displays in which a target face turned from one side to another; then at test, participants judged whether the top half of a composite face (the top half of the target face aligned or misaligned with the bottom half of a foil face) belonged to the target face. We compared performance in the dynamic condition to various static control conditions in Experiments 1, 2, and 3, which differed from each other in terms of the display order of the multiple static images or the inter stimulus interval (ISI) between the images. We found that the size of the face composite effect in the dynamic condition was significantly smaller than that in the static conditions. In other words, the dynamic face display influenced participants to process the target faces in a part-based manner and consequently their recognition of the upper portion of the composite face at test became less interfered with by the aligned lower part of the foil face. The findings from the present experiments provide the strongest evidence to date to suggest that the rigid facial motion mainly influences facial featural, but not holistic, processing. PMID:22342561

The behaviour of arcs in carbon mixed-mode high-power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Tucker, M. D.; Putman, K. J.; Ganesan, R.; Lattemann, M.; Stueber, M.; Ulrich, S.; Bilek, M. M. M.; McKenzie, D. R.; Marks, N. A.

2017-04-01

Mixed-mode deposition of carbon is an extension of high-power impulse magnetron sputtering in which a short-lived arc is deliberately allowed to ignite on the target surface to increase the ionised fraction of carbon in the deposition flux. Here we investigate the ignition and evolution of these arcs and examine their behaviour for different conditions of argon pressure, power supply voltage, and current. We find that mixed-mode deposition is sensitive to the condition of the target surface, and changing the operating parameters causes changes in the target surface condition which themselves affect the discharge in a process of negative feedback. Initially the arcs are evenly distributed on the target racetrack, but after a long period of operation the mode of erosion changes and arcs become localised in a small region, resulting in a pronounced nodular structure. We also quantify macroparticle generation and observe a power-law size distribution typical of arc discharges. Fewer particles are generated for operation at lower Ar pressure when the arc spot velocity is higher.

AZO nanorods thin films by sputtering method

NASA Astrophysics Data System (ADS)

Rosli, A. B.; Shariffudin, S. S.; Awang, Z.; Herman, S. H.

2018-05-01

Al-doped zinc oxide (AZO) nanorods thin film were deposited on Au catalyst using RF sputtering at 300 °C. The 15 nm thickness Au catalyst were deposited on glass substrates by sputtering method followed by annealing for 15 min at 500 °C to form Au nanostructures on the glass substrate. The AZO thin films were then deposited on Au catalyst at different RF power ranging from 50 - 200 W. The morphology of AZO was characterized using Field Emission Scanning Electron Microscopy while X-ray Diffraction was used to examine crystallinity of AZO thin films. From this work, the AZO nanorods was found grow at 200 W RF power.

Sputtering Deposition of Sn-Mo-Based Composite Anode for Thin-Film Li-Ion Batteries

NASA Astrophysics Data System (ADS)

Mani Chandran, T.; Balaji, S.

2016-06-01

The role of electrochemically inactive molybdenum in alleviating the anomalous volume expansion of tin anode upon charge-discharge cycling has been investigated. Tin-molybdenum thin-film composite anodes for Li-ion batteries were prepared using a direct-current sputtering method from a tin metal target incorporating molybdenum element. Results of structural and compositional analyses confirmed the presence of tin and molybdenum. The elemental ratio obtained from energy-dispersive x-ray spectroscopy confirmed the feasibility of tailoring the thin-film composition by varying the ratio of metallic elements present in the sputtering target. Scanning electron micrographs of the samples revealed the occurrence of flower-like open morphology with Mo inclusion in a Sn matrix. The gravimetric discharge capacity for pure Sn, Sn-rich, and Mo-rich samples was 733 mAh g-1, 572 mAh g-1, and 439 mAh g-1, respectively, with capacity retention after 50 cycles of 22%, 61%, and 74%, respectively. Mo inclusion reduced the surface resistivity of the Sn anode after the initial charge-discharge cycle. The charge-transfer resistance after the first cycle for pure Sn, Sn-rich, and Mo-rich samples was 17.395 Ω, 5.345 Ω, and 2.865 Ω, respectively. The lithium-ion diffusion coefficient also increased from 8.68 × 10-8 cm2S-1 for the pure Sn sample to 2.98 × 10-5 cm2S-1 for the Mo-rich sample.

Sputtering yields of carbon based materials under high particle flux with low energy

NASA Astrophysics Data System (ADS)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-04-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

Time-resolved temperature study in a high-power impulse magnetron sputtering discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britun, Nikolay; Palmucci, Maria; Konstantinidis, Stephanos

2013-07-07

The gas heating dynamics is studied in a high-power impulse magnetron sputtering discharge operating in Ar-N{sub 2} gas mixtures. The time-resolved rotational temperature analysis based on the spectral transition between the B{sup 2}{Sigma}{sub u}{sup +}-X{sup 2}{Sigma}{sub g}{sup +} energy levels in molecular nitrogen ion (N{sub 2}{sup +} First Negative Band) is undertaken for this purpose. The rotational temperature in the discharge is found to increase linearly during the plasma pulse being roughly independent on the nitrogen content in the examined range. Such a temperature increase is attributed to the bulk gas heating which is the result of collisions with themore » sputtered species. Two sputtered materials, Ti and W, are examined during the study. In the case of W sputtering, the gas heating is found to be more pronounced than in the Ti case, which is explained by more efficient energy exchange between the sputtered W atoms and the bulk gas atoms during the plasma on-time. The obtained temperature data are compared to the laser-induced fluorescence study of Ar metastable atoms performed recently in the same discharge in our group. The particularities related to gas thermalization as well as to validity of the utilized approach for characterization of the pulsed sputtering discharges are discussed.« less

[Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

PubMed

Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

2009-03-01

Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low

Multilayer coating of optical substrates by ion beam sputtering

NASA Astrophysics Data System (ADS)

Daniel, M. V.; Demmler, M.

2017-10-01

Ion beam sputtering is well established in research and industry, despite its relatively low deposition rates compared to electron beam evaporation. Typical applications are coatings of precision optics, like filters, mirrors and beam splitter. Anti-reflective or high-reflective multilayer stacks benefit from the high mobility of the sputtered particles on the substrate surface and the good mechanical characteristics of the layers. This work gives the basic route from single layer optimization of reactive ion beam sputtered Ta2O5 and SiO2 thin films towards complex multilayer stacks for high-reflective mirrors and anti-reflective coatings. Therefore films were deposited using different oxygen flow into the deposition chamber Afterwards, mechanical (density, stress, surface morphology, crystalline phases) and optical properties (reflectivity, absorption and refractive index) were characterized. These knowledge was used to deposit a multilayer coating for a high reflective mirror.

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

NASA Astrophysics Data System (ADS)

Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

2017-02-01

The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

NASA Astrophysics Data System (ADS)

Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

2014-10-01

Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

Consistent kinetic simulation of plasma and sputtering in low temperature plasmas

NASA Astrophysics Data System (ADS)

Schmidt, Frederik; Trieschmann, Jan; Mussenbrock, Thomas

2016-09-01

Plasmas are commonly used in sputtering applications for the deposition of thin films. Although magnetron sources are a prominent choice, capacitively coupled plasmas have certain advantages (e.g., sputtering of non-conducting and/or ferromagnetic materials, aside of excellent control of the ion energy distribution). In order to understand the collective plasma and sputtering dynamics, a kinetic simulation model is helpful. Particle-in-Cell has been proven to be successful in simulating the plasma dynamics, while the Test-Multi-Particle-Method can be used to describe the sputtered neutral species. In this talk a consistent combination of these methods is presented by consistently coupling the simulated ion flux as input to a neutral particle transport model. The combined model is used to simulate and discuss the spatially dependent densities, fluxes and velocity distributions of all particles. This work is supported by the German Research Foundation (DFG) in the frame of Transregional Collaborative Research Center (SFB) TR-87.

Sputtered deposited nanocrystalline ZnO films: A correlation between electrical, optical and microstructural properties

NASA Astrophysics Data System (ADS)