Site-controlled InGaN/GaN single-photon-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu; Teng, Chu-Hsiang

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Laser-diode-pumped 1319-nm monolithic non-planar ring single-frequency laser

NASA Astrophysics Data System (ADS)

Wang, Qing; Gao, Chunqing; Zhao, Yan; Yang, Suhui; Wei, Guanghui; 2, Dongmei Hong

2003-10-01

Single-frequency 1319-nm laser was obtained by using a laser-diode-pumped monolithic Nd:YAG crystal with a non-planar ring oscillator (NPRO). When the NPRO laser was pumped by an 800-?m fiber coupled laser diode, the output power of the single-frequency 1319-nm laser was 220 mW, and the slope efficiency was 16%. With a 100-1m fiber coupled diode laser pumped, 99-mW single-frequency 1319-nm laser was obtained with a slope efficiency of 29%.

Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector.

PubMed

Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

2011-10-01

This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

Single event burnout of high-power diodes

NASA Astrophysics Data System (ADS)

Maier, K. H.; Denker, A.; Voss, P.; Becker, H.-W.

1998-12-01

High-power diodes might be damaged by a single particle of cosmic radiation. This particle has first to produce a secondary nucleus, that ionizes more densely, through a nuclear reaction with the silicon of the diode. A multiplication of the number of charge carriers, primarily produced by this nucleus, can occur and eventually lead to a break down. The onset of this charge carrier multiplication is investigated with accelerated heavy ions under well controlled conditions. Clear trends are revealed, but the process is not yet understood.

A digital optical phase-locked loop for diode lasers based on field programmable gate array

NASA Astrophysics Data System (ADS)

Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

2012-09-01

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad2 and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

NASA Astrophysics Data System (ADS)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of < 0.5 nm and a wavelength stability of better than 250 MHz over one hour. Dense spectral combination with dichroic mirrors and narrow channel spacing allows us to combine multiple wavelength channels, resulting in a 2 kW laser module with a BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

Detection of Single Molecules Illuminated by a Light-Emitting Diode

PubMed Central

Gerhardt, Ilja; Mai, Lijian; Lamas-Linares, Antía; Kurtsiefer, Christian

2011-01-01

Optical detection and spectroscopy of single molecules has become an indispensable tool in biological imaging and sensing. Its success is based on fluorescence of organic dye molecules under carefully engineered laser illumination. In this paper we demonstrate optical detection of single molecules on a wide-field microscope with an illumination based on a commercially available, green light-emitting diode. The results are directly compared with laser illumination in the same experimental configuration. The setup and the limiting factors, such as light transfer to the sample, spectral filtering and the resulting signal-to-noise ratio are discussed. A theoretical and an experimental approach to estimate these parameters are presented. The results can be adapted to other single emitter and illumination schemes. PMID:22346610

Fill-factor improvement of Si CMOS single-photon avalanche diode detector arrays by integration of diffractive microlens arrays.

PubMed

Intermite, Giuseppe; McCarthy, Aongus; Warburton, Ryan E; Ren, Ximing; Villa, Federica; Lussana, Rudi; Waddie, Andrew J; Taghizadeh, Mohammad R; Tosi, Alberto; Zappa, Franco; Buller, Gerald S

2015-12-28

Single-photon avalanche diode (SPAD) detector arrays generally suffer from having a low fill-factor, in which the photo-sensitive area of each pixel is small compared to the overall area of the pixel. This paper describes the integration of different configurations of high efficiency diffractive optical microlens arrays onto a 32 × 32 SPAD array, fabricated using a 0.35 µm CMOS technology process. The characterization of SPAD arrays with integrated microlens arrays is reported over the spectral range of 500-900 nm, and a range of f-numbers from f/2 to f/22. We report an average concentration factor of 15 measured for the entire SPAD array with integrated microlens array. The integrated SPAD and microlens array demonstrated a very high uniformity in overall efficiency.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE PAGES

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt; ...

2017-05-18

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

A digital optical phase-locked loop for diode lasers based on field programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu Zhouxiang; Zhang Xian; Huang Kaikai

2012-09-15

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat notemore » line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.« less

A digital optical phase-locked loop for diode lasers based on field programmable gate array.

PubMed

Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

2012-09-01

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382∕MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad(2) and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

Single-tone and two-tone AM-FM spectral calculations for tunable diode laser absorption spectroscopy

NASA Technical Reports Server (NTRS)

Chou, Nee-Yin; Sachse, Glen W.

1987-01-01

A generalized theory for optical heterodyne spectroscopy with phase modulated laser radiation is used which allows the calculation of signal line shapes for frequency modulation spectroscopy of Lorentzian gas absorption lines. In particular, synthetic spectral line shapes for both single-tone and two-tone modulation of lead-salt diode lasers are presented in which the contributions from both amplitude and frequency modulations are included.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Single-photon emitting diode in silicon carbide.

PubMed

Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C

2015-07-23

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Highly efficient red single transverse mode superluminescent diodes

NASA Astrophysics Data System (ADS)

Andreeva, E. V.; Anikeev, A. S.; Il'chenko, S. N.; Chamorovskii, A. Yu.; Yakubovich, S. D.

2017-12-01

Optimisation of the epitaxial growth of AlGaInP/GaInPAs nanoheterostructures and improvement of the technologies of active channel formation and p-contact deposition made it possible to considerably increase the external differential quantum efficiency (up to 0.5 mW mA-1), the catastrophic optical degradation threshold (up to 40 mW), and the spectral width (to FWHM exceeding 15 nm) of single transverse mode superluminescent diodes with the centre wavelength of about 675 nm. Lifetime tests demonstrated high reliability of these diodes at a cw output optical power up to 30 mW.

Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

High-performance single nanowire tunnel diodes.

PubMed

Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

2010-03-10

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

Single mode, broad-waveguide ARROW-type semiconductor diode lasers

NASA Astrophysics Data System (ADS)

Al-Muhanna, Abdulrahman Ali

A broad transverse waveguide (low confinement) concept is used to achieve a record-high spatially incoherent cw output power of 11W for InGaAs active devices (λ = 0.97 μm) from 100μm wide-stripe and 2mm-long devices with low internal loss, α1 = 1cm-1, and high characteristic temperatures, T0 = 210K, and T1 = 1800K. A detailed above-threshold analysis reveals that reduction in gain spatial hole burning (GSHB) is possible in ARROW-type structures by using a low transverse confinement factor; consequently, a wider ARROW-core can be utilized. By incorporating both a broad-waveguide concept as well as an asymmetric structure in the transverse direction, and an ARROW-type structure in the lateral direction, a novel single-spatial mode diode laser with improved performance is obtained. Devices with low transverse confinement factor (Γ ~ 1%) and a core-region width of 7.8 μm achieved 510mW single-spatial mode pulsed output power (λ = 0.946 μm) with a full- width at half-maximum (FWHM) of the lateral far-field pattern of 4.7°.

Single Frequency, Pulsed Laser Diode Transmitter for Dial Water Vapor Measurements at 935nm

NASA Technical Reports Server (NTRS)

Switzer, Gregg W.; Cornwell, Donald M., Jr.; Krainak, Michael A.; Abshire, James B.; Rall, Johnathan A. R.

1998-01-01

We report a tunable, single frequency, narrow linewidth, pulsed laser diode transmitter at 935.68nm for remote sensing of atmospheric water vapor. The transmitter consists of a CW, tunable, external cavity diode laser whose output is amplified 2OdB using a tapered diode amplifier. The output is pulsed for range resolved DIAL lidar by pulsing the drive current to the diode amplifier at 4kHz with a .5% duty cycle. The output from the transmitter is 36OnJ/pulse and is single spatial mode. It maintains a linewidth of less than 25MHz as its wavelength is tuned across the water vapor absorption line at 935.68nm. The transmitter design and its use in a water vapor measurement will be discussed.

Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahato, S., E-mail: som.phy.ism@gmail.com; Shiwakoti, N.; Kar, A. K.

2015-06-24

This article reports the measurement of temperature-dependent barrier height and ideality factor of n-CdSe/Cu Schottky barrier diode. The Cadmium Selenide (CdSe) thin films have been deposited by simple electrodeposition technique. The XRD measurements ravels the deposited single phase CdSe films are highly oriented on (002) plane and the average particle size has been calculated to be ~18 nm. From SEM characterization, it is clear that the surface of CdSe thin films are continuous, homogeneous and the film is well adhered to the substrate and consists of fine grains which are irregular in shape and size. Current-Voltage characteristics have been measured atmore » different temperatures in the range (298 K – 353 K). The barrier height and ideality factor are found to be strongly temperature dependent. The inhomogenious barrier height increases and ideality factor decreases with increase in temperature. The expectation value has been calculated and its value is 0.30 eV.« less

Design and characterization of single photon avalanche diodes arrays

NASA Astrophysics Data System (ADS)

Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

2010-05-01

During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

Entrance dose measurements for in‐vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors

PubMed Central

Zhu, X. R.

2000-01-01

Silicon diode dosimeters have been used routinely for in‐vivo dosimetry. Despite their popularity, an appropriate implementation of an in‐vivo dosimetry program using diode detectors remains a challenge for clinical physicists. One common approach is to relate the diode readout to the entrance dose, that is, dose to the reference depth of maximum dose such as dmax for the 10×10 cm2 field. Various correction factors are needed in order to properly infer the entrance dose from the diode readout, depending on field sizes, target‐to‐surface distances (TSD), and accessories (such as wedges and compensate filters). In some clinical practices, however, no correction factor is used. In this case, a diode‐dosimeter‐based in‐vivo dosimetry program may not serve the purpose effectively; that is, to provide an overall check of the dosimetry procedure. In this paper, we provide a formula to relate the diode readout to the entrance dose. Correction factors for TSD, field size, and wedges used in this formula are also clearly defined. Two types of commercial diode detectors, ISORAD (n‐type) and the newly available QED (p‐type) (Sun Nuclear Corporation), are studied. We compared correction factors for TSDs, field sizes, and wedges. Our results are consistent with the theory of radiation damage of silicon diodes. Radiation damage has been shown to be more serious for n‐type than for p‐type detectors. In general, both types of diode dosimeters require correction factors depending on beam energy, TSD, field size, and wedge. The magnitudes of corrections for QED (p‐type) diodes are smaller than ISORAD detectors. PACS number(s): 87.66.–a, 87.52.–g PMID:11674824

Destructive Single-Event Failures in Diodes

NASA Technical Reports Server (NTRS)

Casey, Megan C.; Gigliuto, Robert A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Kim, Hak; Chen, Dakai; Phan, Anthony M.; LaBel, Kenneth A.

2013-01-01

In this summary, we have shown that diodes are susceptible to destructive single-event effects, and that these failures occur along the guard ring. By determining the last passing voltages, a safe operating area can be derived. By derating off of those values, rather than by the rated voltage, like what is currently done with power MOSFETs, we can work to ensure the safety of future missions. However, there are still open questions about these failures. Are they limited to a single manufacturer, a small number, or all of them? Is there a threshold rated voltage that must be exceeded to see these failures? With future work, we hope to answer these questions. In the full paper, laser results will also be presented to verify that failures only occur along the guard ring.

A single-molecule diode.

PubMed

Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B; Mayor, Marcel

2005-06-21

We have designed and synthesized a molecular rod that consists of two weakly coupled electronic pi -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical pi-systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode.

Study of phase-locked diode laser array and DFB/DBR surface emitting laser diode

NASA Astrophysics Data System (ADS)

Hsin, Wei

New types of phased-array and surface-emitting lasers are designed. The importance and approaches (or structures) of different phased array and surface emitting laser diodes are reviewed. The following are described: (1) a large optical cavity channel substrate planar laser array with layer thickness chirping; (2) a vertical cavity surface emitter with distributed feedback (DFB) optical cavity and a transverse junction buried heterostructure; (3) a microcavity distributed Bragg reflector (DBR) surface emitter; and (4) two surface emitting laser structures which utilized lateral current injection schemes to overcome the problems occurring in the vertical injection scheme.

Comparison between single-diode low-level laser therapy (LLLT) and LED multi-diode (cluster) therapy (LEDT) applications before high-intensity exercise.

PubMed

Leal Junior, Ernesto Cesar Pinto; Lopes-Martins, Rodrigo Alvaro Brandão; Baroni, Bruno Manfredini; De Marchi, Thiago; Rossi, Rafael Paolo; Grosselli, Douglas; Generosi, Rafael Abeche; de Godoi, Vanessa; Basso, Maira; Mancalossi, José Luis; Bjordal, Jan Magnus

2009-08-01

There is anecdotal evidence that low-level laser therapy (LLLT) may affect the development of muscular fatigue, minor muscle damage, and recovery after heavy exercises. Although manufacturers claim that cluster probes (LEDT) maybe more effective than single-diode lasers in clinical settings, there is a lack of head-to-head comparisons in controlled trials. This study was designed to compare the effect of single-diode LLLT and cluster LEDT before heavy exercise. This was a randomized, placebo-controlled, double-blind cross-over study. Young male volleyball players (n = 8) were enrolled and asked to perform three Wingate cycle tests after 4 x 30 sec LLLT or LEDT pretreatment of the rectus femoris muscle with either (1) an active LEDT cluster-probe (660/850 nm, 10/30 mW), (2) a placebo cluster-probe with no output, and (3) a single-diode 810-nm 200-mW laser. The active LEDT group had significantly decreased post-exercise creatine kinase (CK) levels (-18.88 +/- 41.48 U/L), compared to the placebo cluster group (26.88 +/- 15.18 U/L) (p < 0.05) and the active single-diode laser group (43.38 +/- 32.90 U/L) (p < 0.01). None of the pre-exercise LLLT or LEDT protocols enhanced performance on the Wingate tests or reduced post-exercise blood lactate levels. However, a non-significant tendency toward lower post-exercise blood lactate levels in the treated groups should be explored further. In this experimental set-up, only the active LEDT probe decreased post-exercise CK levels after the Wingate cycle test. Neither performance nor blood lactate levels were significantly affected by this protocol of pre-exercise LEDT or LLLT.

Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

PubMed

Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

2017-09-20

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

Photoacoustic microscopy of single cells employing an intensity-modulated diode laser

NASA Astrophysics Data System (ADS)

Langer, Gregor; Buchegger, Bianca; Jacak, Jaroslaw; Dasa, Manoj Kumar; Klar, Thomas A.; Berer, Thomas

2018-02-01

In this work, we employ frequency-domain photoacoustic microscopy to obtain photoacoustic images of labeled and unlabeled cells. The photoacoustic microscope is based on an intensity-modulated diode laser in combination with a focused piezo-composite transducer and allows imaging of labeled cells without severe photo-bleaching. We demonstrate that frequency-domain photoacoustic microscopy realized with a diode laser is capable of recording photoacoustic images of single cells with sub-µm resolution. As examples, we present images of undyed human red blood cells, stained human epithelial cells, and stained yeast cells.

A single-molecule diode

PubMed Central

Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

2005-01-01

We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

Diode-end-pumped continuously tunable single frequency Tm, Ho:LLF laser at 2.06 μm.

PubMed

Zhang, Xinlu; Zhang, Su; Xiao, Nana; Cui, Jinhui; Zhao, Jiaqun; Li, Li

2014-03-10

We report on a laser diode-end-pumped continuously tunable single frequency Tm, Ho:LLF laser near room temperature. For transmission of 5%, the maximum single frequency output power of 221 mW at 2064.4 nm was obtained by using two uncoated etalons. The single frequency Tm, Ho:LLF laser operated on the fundamental transverse mode with an M2 factor of 1.13, and the output frequency could be tuned continuously near 1.5 GHz by angle tuning only of the 1 mm thick etalon. Furthermore, the influence of output coupler transmission on the laser performance was also investigated. The single frequency laser can be used as a seed laser for coherent Doppler lidar and differential absorption lidar systems.

In vivo dosimetry using a single diode for megavoltage photon beam radiotherapy: implementation and response characterization.

PubMed

Colussi, V C; Beddar, A S; Kinsella, T J; Sibata, C H

2001-01-01

The AAPM Task Group 40 reported that in vivo dosimetry can be used to identify major deviations in treatment delivery in radiation therapy. In this paper, we investigate the feasibility of using one single diode to perform in vivo dosimetry in the entire radiotherapeutic energy range regardless of its intrinsic buildup material. The only requirement on diode selection would be to choose a diode with the adequate build up to measure the highest beam energy. We have tested the new diodes from Sun Nuclear Corporation (called QED and ISORAD-p--both p-type) for low-, intermediate-, and high-energy range. We have clinically used both diode types to monitor entrance doses. In general, we found that the dose readings from the ISORAD (p-type) are closer of the dose expected than QED diodes in the clinical setting. In this paper we report on the response of these newly available ISORAD (p-type) diode detectors with respect to certain radiation field parameters such as source-to-surface distance, field size, wedge beam modifiers, as well as other parameters that affect detector characteristics (temperature and detector-beam orientation). We have characterized the response of the high-energy ISORAD (p-type) diode in the low- (1-4 MV), intermediate- (6-12 MV), and high-energy (15-25 MV) range. Our results showed that the total variation of the response of high-energy ISORAD (p-type) diodes to all the above parameters are within +/-5% in most encountered clinical patient treatment setups in the megavoltage photon beam radiotherapy. The usage of the high-energy buildup diode has the additional benefit of amplifying the response of the diode reading in case the wrong energy is used for patient treatment. In the light of these findings, we have since then switched to using only one single diode type, namely the "red" diode; manufacturer designation of the ISORAD (p-type) high-energy (15-25 MV) range diode, for all energies in our institution and satellites.

Schottky barrier diode and method thereof

NASA Technical Reports Server (NTRS)

Aslam, Shahid (Inventor); Franz, David (Inventor)

2008-01-01

Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

NASA Astrophysics Data System (ADS)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Single phase inverter for a three phase power generation and distribution system

NASA Technical Reports Server (NTRS)

Lindena, S. J.

1976-01-01

A breadboard design of a single-phase inverter with sinusoidal output voltage for a three-phase power generation and distribution system was developed. The three-phase system consists of three single-phase inverters, whose output voltages are connected in a delta configuration. Upon failure of one inverter the two remaining inverters will continue to deliver three-phase power. Parallel redundancy as offered by two three-phase inverters is substituted by one three-phase inverter assembly with high savings in volume, weight, components count and complexity, and a considerable increase in reliability. The following requirements must be met: (1) Each single-phase, current-fed inverter must be capable of being synchronized to a three-phase reference system such that its output voltage remains phaselocked to its respective reference voltage. (2) Each single-phase, current-fed inverter must be capable of accepting leading and lagging power factors over a range from -0.7 through 1 to +0.7.

Single-mode oscillation of a diode-pumped Nd:YAG microchip laser at 1835 nm

NASA Astrophysics Data System (ADS)

Lan, Jinglong; Cui, Qin; Wang, Yi; Xu, Bin; Xu, Huiying; Cai, Zhiping

2016-10-01

Single-mode oscillation of a diode-pumped conventional Nd:YAG laser at 1835 nm is demonstrated, for the first time to our knowledge, in the form of microchip configuration. The achieved maximum output power reaches 189 mW with slope efficiency of about 5.5% with respect to absorbed pump power. The laser spectra are measured with linewidth less than 0.08 nm indicating a single longitudinal mode. The output laser beam is also measured to be near diffraction-limited with M2 factors of about 1.2 and 1.5 in x and y directions. Using a mechanical chopper with 50% duty cycle, the maximum output power is improved to 253 mW with slope efficiency of about 9.7%.

Single Phase Passive Rectification Versus Active Rectification Applied to High Power Stirling Engines

NASA Technical Reports Server (NTRS)

Santiago, Walter; Birchenough, Arthur G.

2006-01-01

Stirling engine converters are being considered as potential candidates for high power energy conversion systems required by future NASA explorations missions. These types of engines typically contain two major moving parts, the displacer and the piston, in which a linear alternator is attached to the piston to produce a single phase sinusoidal waveform at a specific electric frequency. Since all Stirling engines perform at low electrical frequencies (less or equal to 100 Hz), space explorations missions that will employ these engines will be required to use DC power management and distribution (PMAD) system instead of an AC PMAD system to save on space and weight. Therefore, to supply such DC power an AC to DC converter is connected to the Stirling engine. There are two types of AC to DC converters that can be employed, a passive full bridge diode rectifier and an active switching full bridge rectifier. Due to the inherent line inductance of the Stirling Engine-Linear Alternator (SE-LA), their sinusoidal voltage and current will be phase shifted producing a power factor below 1. In order to keep power the factor close to unity, both AC to DC converters topologies will implement power factor correction. This paper discusses these power factor correction methods as well as their impact on overall mass for exploration applications. Simulation results on both AC to DC converters topologies with power factor correction as a function of output power and SE-LA line inductance impedance are presented and compared.

In vivo dosimetry using a single diode for megavoltage photon beam radiotherapy: Implementation and response characterization

PubMed Central

Beddar, A. Sam; Kinsella, Timothy J.; Sibata, Claudio H.

2001-01-01

The AAPM Task Group 40 reported that in vivo dosimetry can be used to identify major deviations in treatment delivery in radiation therapy. In this paper, we investigate the feasibility of using one single diode to perform in vivo dosimetry in the entire radiotherapeutic energy range regardless of its intrinsic buildup material. The only requirement on diode selection would be to choose a diode with the adequate build up to measure the highest beam energy. We have tested the new diodes from Sun Nuclear Corporation (called QED and ISORAD‐p–both p‐type) for low‐, intermediate‐, and high‐energy range. We have clinically used both diode types to monitor entrance doses. In general, we found that the dose readings from the ISORAD (p‐type) are closer of the dose expected than QED diodes in the clinical setting. In this paper we report on the response of these newly available ISORAD (p‐type) diode detectors with respect to certain radiation field parameters such as source‐to‐surface distance, field size, wedge beam modifiers, as well as other parameters that affect detector characteristics (temperature and detector‐beam orientation). We have characterized the response of the high‐energy ISORAD (p‐type) diode in the low‐ (1–4 MV), intermediate‐ (6–12 MV), and high‐energy (15–25 MV) range. Our results showed that the total variation of the response of high‐energy ISORAD (p‐type) diodes to all the above parameters are within ±5% in most encountered clinical patient treatment setups in the megavoltage photon beam radiotherapy. The usage of the high‐energy buildup diode has the additional benefit of amplifying the response of the diode reading in case the wrong energy is used for patient treatment. In the light of these findings, we have since then switched to using only one single diode type, namely the “red” diode; manufacturer designation of the ISORAD (p‐type) high‐energy (15–25 MV) range diode, for all energies in our

Neural Imaging Using Single-Photon Avalanche Diodes

PubMed Central

Karami, Mohammad Azim; Ansarian, Misagh

2017-01-01

Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimum dark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging process using SPADs can be performed by means of florescence lifetime imaging (FLIM), time correlated single-photon counting (TCSPC), positron emission tomography (PET), and single-photon emission computed tomography (SPECT). Results: This trend will result in more precise neural imaging cameras. While achieving low DCR SPADs is difficult in deep submicron technologies because of using higher doping profiles, higher PDPs are reported in green and blue part of light. Furthermore, the number of pixels integrated in the same chip is increasing with the technology progress which can result in the higher resolution of imaging. Conclusion: This study proposes implemented SPADs in Deep-submicron technologies to be used in neural imaging cameras, due to the small size pixels and higher timing accuracies. PMID:28446946

Diode pumped Nd:YAG laser development

NASA Technical Reports Server (NTRS)

Reno, C. W.; Herzog, D. G.

1976-01-01

A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

NASA Astrophysics Data System (ADS)

Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

2017-12-01

Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

NASA Astrophysics Data System (ADS)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

PubMed

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Direct-writing lithography using laser diode beam focused with single elliptical microlens

NASA Astrophysics Data System (ADS)

Hasan, Md. Nazmul; Haque, Muttahid-Ull; Trisno, Jonathan; Lee, Yung-Chun

2015-10-01

A lithography method is proposed for arbitrary patterning using an elliptically diverging laser diode beam focused with a single planoconvex elliptical microlens. Simulations are performed to model the propagation properties of the laser beam and to design the elliptical microlens, which has two different profiles in the x- and y-axis directions. The microlens is fabricated using an excimer laser dragging method and is then attached to the laser diode using double-sided optically cleared adhesive (OCA) tape. Notably, the use of OCA tape removes the need for a complicated alignment procedure and thus significantly reduces the assembly cost. The minimum focused spot of the laser diode beam is investigated by performing single-shot exposure tests on a photoresist (PR) layer. Finally, the practical feasibility of this lithography technique to generate an arbitrary pattern is demonstrated by dotted and continuous features through thin chromium layer deposition on PR and a metal lift-off process. The results show that the minimum feature size for the dotted patterns is around 6.23 μm, while the minimum linewidths for continuous patterns is 6.44 μm. In other words, the proposed focusing technique has significant potential for writing any arbitrary high-resolution pattern for applications like printed circuit board fabrication.

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

1989-01-01

A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

A Digital Phase Lock Loop for an External Cavity Diode Laser

NASA Astrophysics Data System (ADS)

Wang, Xiao-Long; Tao, Tian-Jiong; Cheng, Bing; Wu, Bin; Xu, Yun-Fei; Wang, Zhao-Ying; Lin, Qiang

2011-08-01

A digital optical phase lock loop (OPLL) is implemented to synchronize the frequency and phase between two external cavity diode lasers (ECDL), generating Raman pulses for atom interferometry. The setup involves all-digital phase detection and a programmable digital proportional-integral-derivative (PID) loop in locking. The lock generates a narrow beat-note linewidth below 1 Hz and low phase-noise of 0.03rad2 between the master and slave ECDLs. The lock proves to be stable and robust, and all the locking parameters can be set and optimized on a computer interface with convenience, making the lock adaptable to various setups of laser systems.

Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires.

PubMed

Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig

2013-05-01

In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of +/- 1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu2O NP film and the single ZnO NW.

Single nanowire green InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

2016-10-01

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

Flexible microwave PIN diodes and switches employing transferrable single-crystal Si nanomembranes on plastic substrates

NASA Astrophysics Data System (ADS)

Qin, Guoxuan; Yuan, Hao-Chih; Celler, George K.; Zhou, Weidong; Ma, Zhenqiang

2009-12-01

This paper reports the realization of flexible RF/microwave PIN diodes and switches using transferrable single-crystal Si nanomembranes (SiNM) that are monolithically integrated on low-cost, flexible plastic substrates. High frequency response is obtained through the realization of low parasitic resistance achieved with heavy ion implantation before nanomembrane release and transfer. The flexible lateral SiNM PIN diodes exhibit typical rectifying characteristics with insertion loss and isolation better than 0.9 dB and 19.6 dB, respectively, from DC to 5 GHz, as well as power handling up to 22.5 dBm without gain compression. A single-pole single-throw (SPST) flexible RF switch employing shunt-series PIN diode configuration has achieved insertion loss and isolation better than 0.6 dB and 22.9 dB, respectively, from DC to 5 GHz. Furthermore, the SPST microwave switch shows performance improvement and robustness under mechanical deformation conditions. The study demonstrates the considerable potential of using properly processed transferrable SiNM for microwave passive components. Future investigations on transferrable SiNMs will lead to eventual realization of monolithic microwave integrated systems on low-cost flexible substrates.

Note: Fully integrated active quenching circuit achieving 100 MHz count rate with custom technology single photon avalanche diodes.

PubMed

Acconcia, G; Labanca, I; Rech, I; Gulinatti, A; Ghioni, M

2017-02-01

The minimization of Single Photon Avalanche Diodes (SPADs) dead time is a key factor to speed up photon counting and timing measurements. We present a fully integrated Active Quenching Circuit (AQC) able to provide a count rate as high as 100 MHz with custom technology SPAD detectors. The AQC can also operate the new red enhanced SPAD and provide the timing information with a timing jitter Full Width at Half Maximum (FWHM) as low as 160 ps.

Physics of frequency-modulated comb generation in quantum-well diode lasers

NASA Astrophysics Data System (ADS)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications.

PubMed

Wang, Song; Cottrill, Anton L; Kunai, Yuichiro; Toland, Aubrey R; Liu, Pingwei; Wang, Wen-Jun; Strano, Michael S

2017-05-24

Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young's moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell-Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences - analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

Phase-factor-dependent symmetries and quantum phases in a three-level cavity QED system.

PubMed

Fan, Jingtao; Yu, Lixian; Chen, Gang; Jia, Suotang

2016-05-03

Unlike conventional two-level particles, three-level particles may support some unitary-invariant phase factors when they interact coherently with a single-mode quantized light field. To gain a better understanding of light-matter interaction, it is thus necessary to explore the phase-factor-dependent physics in such a system. In this report, we consider the collective interaction between degenerate V-type three-level particles and a single-mode quantized light field, whose different components are labeled by different phase factors. We mainly establish an important relation between the phase factors and the symmetry or symmetry-broken physics. Specifically, we find that the phase factors affect dramatically the system symmetry. When these symmetries are breaking separately, rich quantum phases emerge. Finally, we propose a possible scheme to experimentally probe the predicted physics of our model. Our work provides a way to explore phase-factor-induced nontrivial physics by introducing additional particle levels.

A single blue nanorod light emitting diode.

PubMed

Hou, Y; Bai, J; Smith, R; Wang, T

2016-05-20

We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm(-2) is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.

Single diode laser sensor for wide-range H2O temperature measurements.

PubMed

Gharavi, Mohammadreza; Buckley, Steven G

2004-04-01

A single diode laser absorption sensor (near 1477 nm) useful for simultaneous temperature and H2O concentration measurements is developed. The diode laser tunes approximately 1.2 cm(-1) over three H2O absorption transitions in each measurement. The line strengths of the transitions are measured over a temperature range from 468 to 977 K, based on high-resolution absorption measurements in a heated static cell. The results indicate that the selected transitions are suitable for sensitive temperature measurements in atmospheric pressure combustion systems using absorption line ratios. Comparing the results with HITRAN 96 data, it appears that these transitions will be sensitive over a wide range of temperatures (450-2000 K), suggesting applicability for combustion measurements.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

NASA Astrophysics Data System (ADS)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Characterization of a synthetic single crystal diamond Schottky diode for radiotherapy electron beam dosimetry.

PubMed

Di Venanzio, C; Marinelli, Marco; Milani, E; Prestopino, G; Verona, C; Verona-Rinati, G; Falco, M D; Bagalà, P; Santoni, R; Pimpinella, M

2013-02-01

To investigate the dosimetric properties of synthetic single crystal diamond based Schottky diodes under irradiation with therapeutic electron beams from linear accelerators. A single crystal diamond detector was fabricated and tested under 6, 8, 10, 12, and 15 MeV electron beams. The detector performances were evaluated using three types of commercial detectors as reference dosimeters: an Advanced Markus plane parallel ionization chamber, a Semiflex cylindrical ionization chamber, and a p-type silicon detector. Preirradiation, linearity with dose, dose rate dependence, output factors, lateral field profiles, and percentage depth dose profiles were investigated and discussed. During preirradiation the diamond detector signal shows a weak decrease within 0.7% with respect to the plateau value and a final signal stability of 0.1% (1σ) is observed after about 5 Gy. A good linear behavior of the detector response as a function of the delivered dose is observed with deviations below ±0.3% in the dose range from 0.02 to 10 Gy. In addition, the detector response is dose rate independent, with deviations below 0.3% in the investigated dose rate range from 0.17 to 5.45 Gy∕min. Percentage depth dose curves obtained from the diamond detector are in good agreement with the ones from the reference dosimeters. Lateral beam profile measurements show an overall good agreement among detectors, taking into account their respective geometrical features. The spatial resolution of solid state detectors is confirmed to be better than that of ionization chambers, being the one from the diamond detector comparable to that of the silicon diode. A good agreement within experimental uncertainties was also found in terms of output factor measurements between the diamond detector and reference dosimeters. The observed dosimetric properties indicate that the tested diamond detector is a suitable candidate for clinical electron beam dosimetry.

Near-field phase-change recording using a GaN laser diode

NASA Astrophysics Data System (ADS)

Kishima, Koichiro; Ichimura, Isao; Yamamoto, Kenji; Osato, Kiyoshi; Kuroda, Yuji; Iida, Atsushi; Saito, Kimihiro

2000-09-01

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

NASA Astrophysics Data System (ADS)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Single-stage three-phase boost power factor correction circuit for AC-DC converter

NASA Astrophysics Data System (ADS)

Azazi, Haitham Z.; Ahmed, Sayed M.; Lashine, Azza E.

2018-01-01

This article presents a single-stage three-phase power factor correction (PFC) circuit for AC-to-DC converter using a single-switch boost regulator, leading to improve the input power factor (PF), reducing the input current harmonics and decreasing the number of required active switches. A novel PFC control strategy which is characterised as a simple and low-cost control circuit was adopted, for achieving a good dynamic performance, unity input PF, and minimising the harmonic contents of the input current, at which it can be applied to low/medium power converters. A detailed analytical, simulation and experimental studies were therefore conducted. The effectiveness of the proposed controller algorithm is validated by the simulation results, which were carried out using MATLAB/SIMULINK environment. The proposed system is built and tested in the laboratory using DSP-DS1104 digital control board for an inductive load. The results revealed that the total harmonic distortion in the supply current was very low. Finally, a good agreement between simulation and experimental results was achieved.

A single-molecule diode

NASA Astrophysics Data System (ADS)

Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

2005-06-01

We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

NASA Technical Reports Server (NTRS)

Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan B.; Krainak, Michael A.

2014-01-01

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064-nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Especially, using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to104 at 10 mHz. The PW-ECLs compactness and low cost make it a candidate to replace traditional Nd:YAGnon-planar ring oscillators and fiber lasers in applications which require a single longitudinal-mode.

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

NASA Technical Reports Server (NTRS)

Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael

2014-01-01

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

Diode-end-pumped single-longitudinal-mode passively Q-switched Nd:GGG laser

NASA Astrophysics Data System (ADS)

Xue, Feng; Zhang, Sasa; Cong, Zhenhua; Huang, Qingjie; Guan, Chen; Wu, Qianwen; Chen, Hui; Bai, Fen; Liu, Zhaojun

2018-03-01

Diode-end-pumped passively Q-switched Nd:GGG laser in a ring cavity at 1062 nm was demonstrated. Single-longitudinal-mode laser linewidth less than 0.5 pm was accomplished by unidirectional operation. The maximum output pulse energy was 437 µJ and the pulse width was 43 ns when Cr4+:YAG with an initial transmission of 61% was used.

A potential single-phased emission-tunable silicate phosphor Ca3Si2O7:Ce3+,Eu2+ excited by ultraviolet light for white light emitting diodes

NASA Astrophysics Data System (ADS)

Lv, Wenzhen; Guo, Ning; Jia, Yongchao; Zhao, Qi; You, Hongpeng

2013-03-01

Single-phased Ca3Si2O7:Ce3+,Eu2+ phosphor has been successfully prepared by the high temperature solid-state method. The phosphor shows efficient excitation bands from 200 to 400 nm and adjustable emission bands through the energy transfer from the Ce3+ to Eu2+ ions. The color hues can change from blue towards white ultimately to orange by adjusting the percentage content of doping ions. The investigation reveals that an electric dipole-dipole reaction mechanism should be responsible for the energy transfer from the Ce3+ to Eu2+ ions. The critical distance was obtained from the spectral overlap in terms of Dexter's theory. The developed phosphor Ca3Si2O7:Ce3+,Eu2+ exhibits two bands at 440 and 625 nm, respectively, which reveling that it has a great potentiality to be an UV-convertible phosphor for white-light emitting diodes with low color temperature.

Passive Optical Locking Techniques for Diode Lasers

NASA Astrophysics Data System (ADS)

Zhang, Quan

1995-01-01

Most current diode-based nonlinear frequency converters utilize electronic frequency locking techniques. However, this type of locking technique typically involves very complex electronics, and suffers the 'power-drop' problem. This dissertation is devoted to the development of an all-optical passive locking technique that locks the diode laser frequency to the external cavity resonance stably without using any kind of electronic servo. The amplitude noise problem associated with the strong optical locking has been studied. Single-mode operation of a passively locked single-stripe diode with an amplitude stability better than 1% has been achieved. This passive optical locking technique applies to broad-area diodes as well as single-stripe diodes, and can be easily used to generate blue light. A schematic of a milliwatt level blue laser based on the single-stripe diode locking technique has been proposed. A 120 mW 467 nm blue laser has been built using the tapered amplifier locking technique. In addition to diode-based blue lasers, this passive locking technique has applications in nonlinear frequency conversions, resonant spectroscopy, particle counter devices, telecommunications, and medical devices.

Laser Diode Ignition (LDI)

NASA Technical Reports Server (NTRS)

Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

1994-01-01

This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

Ultrahigh-speed phaselocked-loop type clock recovery circuit using a travelling-wave laser diode amplifier as a 50 GHz phase detector

NASA Astrophysics Data System (ADS)

Kawanishi, S.; Takara, H.; Saruwatari, M.; Kitoh, T.

1993-09-01

Successful operation of a phase-locked loop is demonstrated using a traveling-wave laser-diode amplifier as a 50 GHz phase detector. Optical gain modulation in the laser diode amplifier and an all-optical clock multiplication technique using a silica-based guided-wave optical circuit are used to achieve the extremely high-speed operation. Also discussed is the possibility of more than 100 GHz operation.

Laser diode package with enhanced cooling

DOEpatents

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Laser diode package with enhanced cooling

DOEpatents

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2012-06-12

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Laser diode package with enhanced cooling

DOEpatents

Deri, Robert J; Kotovsky, Jack; Spadaccini, Christopher M

2012-06-26

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Far field beam pattern of one MW combined beam of laser diode array amplifiers for space power transmission

NASA Technical Reports Server (NTRS)

Kwon, Jin H.; Lee, Ja H.

1989-01-01

The far-field beam pattern and the power-collection efficiency are calculated for a multistage laser-diode-array amplifier consisting of about 200,000 5-W laser diode arrays with random distributions of phase and orientation errors and random diode failures. From the numerical calculation it is found that the far-field beam pattern is little affected by random failures of up to 20 percent of the laser diodes with reference of 80 percent receiving efficiency in the center spot. The random differences in phases among laser diodes due to probable manufacturing errors is allowed to about 0.2 times the wavelength. The maximum allowable orientation error is about 20 percent of the diffraction angle of a single laser diode aperture (about 1 cm). The preliminary results indicate that the amplifier could be used for space beam-power transmission with an efficiency of about 80 percent for a moderate-size (3-m-diameter) receiver placed at a distance of less than 50,000 km.

Phase-field modeling of switchable diode-like current-voltage characteristics in ferroelectric BaTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Y., E-mail: yxc238@psu.edu; Randall, C. A.; Chen, L. Q.

2014-05-05

A self-consistent model has been proposed to study the switchable current-voltage (I-V) characteristics in Cu/BaTiO{sub 3}/Cu sandwiched structure combining the phase-field model of ferroelectric domains and diffusion equations for ionic/electronic transport. The electrochemical transport equations and Ginzburg-Landau equations are solved using the Chebyshev collocation algorithm. We considered a single parallel plate capacitor configuration which consists of a single layer BaTiO{sub 3} containing a single tetragonal domain orientated normal to the plate electrodes (Cu) and is subject to a sweep of ac bias from −1.0 to 1.0 V at 25 °C. Our simulation clearly shows rectifying I-V response with rectification ratios amount tomore » 10{sup 2}. The diode characteristics are switchable with an even larger rectification ratio after the polarization direction is flipped. The effects of interfacial polarization charge, dopant concentration, and dielectric constant on current responses were investigated. The switchable I-V behavior is attributed to the polarization bound charges that modulate the bulk conduction.« less

A Single-Photon Avalanche Diode Array for Fluorescence Lifetime Imaging Microscopy.

PubMed

Schwartz, David Eric; Charbon, Edoardo; Shepard, Kenneth L

2008-11-21

We describe the design, characterization, and demonstration of a fully integrated single-photon avalanche diode (SPAD) imager for use in time-resolved fluorescence imaging. The imager consists of a 64-by-64 array of active SPAD pixels and an on-chip time-to-digital converter (TDC) based on a delay-locked loop (DLL) and calibrated interpolators. The imager can perform both standard time-correlated single-photon counting (TCSPC) and an alternative gated-window detection useful for avoiding pulse pile-up when measuring bright signal levels. To illustrate the use of the imager, we present measurements of the decay lifetimes of fluorescent dyes of several types with a timing resolution of 350 ps.

A Single-Photon Avalanche Diode Array for Fluorescence Lifetime Imaging Microscopy

PubMed Central

Schwartz, David Eric; Charbon, Edoardo; Shepard, Kenneth L.

2013-01-01

We describe the design, characterization, and demonstration of a fully integrated single-photon avalanche diode (SPAD) imager for use in time-resolved fluorescence imaging. The imager consists of a 64-by-64 array of active SPAD pixels and an on-chip time-to-digital converter (TDC) based on a delay-locked loop (DLL) and calibrated interpolators. The imager can perform both standard time-correlated single-photon counting (TCSPC) and an alternative gated-window detection useful for avoiding pulse pile-up when measuring bright signal levels. To illustrate the use of the imager, we present measurements of the decay lifetimes of fluorescent dyes of several types with a timing resolution of 350 ps. PMID:23976789

Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Fei-ping, E-mail: lufp-sysu@163.com; Liu, Xiao-bin; Xing, Yong-zhong

2014-04-28

Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (ϕ{sub n}) is equal tomore » the hole injection barrier (ϕ{sub p}) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ϕ{sub n} > ϕ{sub p} under the condition of electron mobility (μ{sub 0n}) > hole mobility (μ{sub 0p}), whereas the result for the case of μ{sub 0n} < μ{sub 0p}, is opposite. The largest CBF when μ{sub 0n} = μ{sub 0p} can be achieved in the case of ϕ{sub n} = ϕ{sub p} in the entire region of the applied voltage. In addition, the CBF value of the device increases with increasing applied voltage. The results obtained in this paper can present an in-depth understanding of the OLED working mechanism and help in the future fabrication of high efficiency OLEDs.« less

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy.more » Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.« less

Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

PubMed Central

Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

2014-01-01

Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

2.1 μm high-power laser diode beam combining(Conference Presentation)

NASA Astrophysics Data System (ADS)

Berrou, Antoine P. C.; Elder, Ian F.; Lamb, Robert A.; Esser, M. J. Daniel

2016-10-01

Laser power and brightness scaling, in "eye safe" atmospheric transmission windows, is driving laser system research and development. High power lasers with good beam quality, at wavelength around 2.1 µm, are necessary for optical countermeasure applications. For such applications, focusing on efficiency and compactness of the system is mandatory. In order to cope with these requirements, one must consider the use of laser diodes which emit directly in the desired spectral region. The challenge for these diodes is to maintain a good beam quality factor as the output power increases. 2 µm diodes with excellent beam quality in both axes are available with output powers of 100 mW. Therefore, in order to reach multi-watt of average output power, broad-area single emitters and beam combining becomes relevant. Different solutions have been implemented in the 1.9 to 2 µm wavelength range, one of which is to stack multiple emitter bars reaching more than one hundred watt, while another is a fibre coupled diode module. The beam propagation factor of these systems is too high for long atmospheric propagation applications. Here we describe preliminary results on non-coherent beam combining of 2.1 µm high power Fabry-Perot GaSb laser diodes supplied by Brolis Semiconductors Ltd. First we evaluated single mode diodes (143 mW) with good beam quality (M2 < 1.5 for slow axis and < 1.1 for fast axis). Then we characterized broad-area single emitter diodes (808 mW) with an electrical-to-optical efficiency of 19 %. The emitter width was 90 µm with a cavity length of 1.5 mm. In our experiments we found that the slow axis multimode output beam consisted of two symmetric lobes with a total full width at half maximum (FWHM) divergence angle of 25 degrees, corresponding to a calculated beam quality factor of M2 = 25. The fast axis divergence was specified to be 44 degrees, with an expected beam quality factor close to the diffraction limit, which informed our selection of collimation

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

PubMed Central

2013-01-01

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377

Micromirror Array Control of a Phase-Locked Laser Diode Array

DTIC Science & Technology

1995-12-01

Micromirror Intensity-Voltage Curve . From the intensity plot, maxima (Ix) and minima (IMN) are noted. If IMAX and IMn are known, A4 can be calculated for...of the micromirror array used. Mirror 9 600 500 E 400- S300- C, -0200 lOO_ 0 0 5 10 15 20 25 30 Volts Figure 3b. Mirror Deflection Curve Corresponding...AFIT/GAP/ENP/95D-2 MICROMIRROR ARRAY CONTROL OF A PHASE-LOCKED LASER DIODE ARRAY THESIS Carl J. Christensen, Captain, USAF AFIT/GAP/ENP/95D-2

Prototype laser-diode-pumped solid state laser transmitters

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Cheng, Emily A. P.; Wallace, Richard W.

1989-01-01

Monolithic, diode-pumped Nd:YAG ring lasers can provide diffraction-limited, single-frequency, narrow-linewidth, tunable output which is adequate for use as a local oscillator in a coherent communication system. A laser was built which had a linewidth of about 2 kHz, a power of 5 milliwatts, and which was tunable over a range of 30 MHz in a few microseconds. This laser was phase-locked to a second, similar laser. This demonstrates that the powerful technique of heterodyne detection is possible with a diode-pumped laser used as the local oscillator. Laser diode pumping of monolithic Nd:YAG rings can lead to output powers of hundreds of milliwatts from a single laser. A laser was built with a single-mode output of 310 mW. Several lasers can be chained together to sum their power, while maintaining diffraction-limited, single frequency operation. This technique was demonstrated with two lasers, with a total output of 340 mW, and is expected to be practical for up to about ten lasers. Thus with lasers of 310 mW, output of up to 3 W is possible. The chaining technique, if properly engineered, results in redundancy. The technique of resonant external modulation and doubling is designed to efficiently convert the continuous wave, infrared output of our lasers into low duty-cycle pulsed green output. This technique was verified through both computer modeling and experimentation. Further work would be necessary to develop a deliverable system using this technique.

Novel high-brightness fiber coupled diode laser device

NASA Astrophysics Data System (ADS)

Haag, Matthias; Köhler, Bernd; Biesenbach, Jens; Brand, Thomas

2007-02-01

High brightness becomes more and more important in diode laser applications for fiber laser pumping and materials processing. For OEM customers fiber coupled devices have great advantages over direct beam modules: the fiber exit is a standardized interface, beam guiding is easy with nearly unlimited flexibility. In addition to the transport function the fiber serves as homogenizer: the beam profile of the laser radiation emitted from a fiber is symmetrical with highly repeatable beam quality and pointing stability. However, efficient fiber coupling requires an adaption of the slow-axis beam quality to the fiber requirements. Diode laser systems based on standard 10mm bars usually employ beam transformation systems to rearrange the highly asymmetrical beam of the laser bar or laser stack. These beam transformation systems (prism arrays, lens arrays, fiber bundles etc.) are expensive and become inefficient with increasing complexity. This is especially true for high power devices with small fiber diameters. On the other hand, systems based on single emitters are claimed to have good potential in cost reduction. Brightness of the inevitable fiber bundles, though, is limited due to inherent fill-factor losses. At DILAS a novel diode laser device has been developed combining the advantages of diode bars and single emitters: high brightness at high reliability with single emitter cost structure. Heart of the device is a specially tailored laser bar (T-Bar), which epitaxial and lateral structure was designed such that only standard fast- and slow-axis collimator lenses are required to couple the beam into a 200μm fiber. Up to 30 of these T-Bars of one wavelength can be combined to reach a total of > 500W ex fiber in the first step. Going to a power level of today's single emitter diodes even 1kW ex 200μm fiber can be expected.

New yellow Ba 0.93Eu 0.07Al 2O 4 phosphor for warm-white light-emitting diodes through single-emitting-center conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Budai, John D.; Liu, Feng

2013-01-01

Phosphor-converted white light-emitting diodes for indoor illumination need to be warm-white (i.e., correlated color temperature <4000 K) with good color rendition (i.e., color rendering index >80). However, no single-phosphor, single-emitting-center-converted white light-emitting diodes can simultaneously satisfy the color temperature and rendition requirements due to the lack of sufficient red spectral component in the phosphors’ emission spectrum. Here, we report a new yellow Ba 0.93Eu 0.07Al 2O 4 phosphor that has a new orthorhombic lattice structure and exhibits a broad yellow photoluminescence band with sufficient red spectral component. Warm-white emissions with correlated color temperature <4000 K and color rendering index >80more » were readily achieved when combining the Ba 0.93Eu 0.07Al 2O 4 phosphor with a blue light-emitting diode (440–470 nm). This study demonstrates that warm-white light-emitting diodes with high color rendition (i.e., color rendering index >80) can be achieved based on single-phosphor, single-emitting-center conversion.« less

Single-frequency Ince-Gaussian mode operations of laser-diode-pumped microchip solid-state lasers.

PubMed

Ohtomo, Takayuki; Kamikariya, Koji; Otsuka, Kenju; Chu, Shu-Chun

2007-08-20

Various single-frequency Ince-Gaussian mode oscillations have been achieved in laser-diode-pumped microchip solid-state lasers, including LiNdP(4)O(12) (LNP) and Nd:GdVO(4), by adjusting the azimuthal symmetry of the short laser resonator. Ince-Gaussian modes formed by astigmatic pumping have been reproduced by numerical simulation.

Injection chaining of diode-pumped single-frequency ring lasers for free-space communication

NASA Technical Reports Server (NTRS)

Cheng, E. A. P.; Kane, T. J.; Wallace, R. W.; Cornwell, D. M., Jr.

1991-01-01

A high-power three-stage laser suitable for use in a space communication system has been built. This laser uses three diode-pumped Nd:YAG oscillators coherently combined using the technique of injection chaining. All three oscillators are in one compact and permanently aligned package, and are actively frequency locked to provide CW single frequency output. The three stages provide the redundancy desirable for space communications.

2D photoacoustic scanning imaging with a single pulsed laser diode excitation

NASA Astrophysics Data System (ADS)

Chen, Xuegang; Li, Changwei; Zeng, Lvming; Liu, Guodong; Huang, Zhen; Ren, Zhong

2012-03-01

A portable near-infrared photoacoustic scanning imaging system has been developed with a single pulsed laser diode, which was integrated with an optical lens system to straightforward boost the laser energy density for photoacoustic generation. The 905 nm laser diode provides a maximum energy output of 14 μJ within 100 ns pulse duration, and the pulse repetition frequency rate is 0.8 KHz. As a possible alternative light source, the preliminary 2D photoacoustic results primely correspond with the test phantoms of umbonate extravasated gore and knotted blood vessel network. The photoacoustic SNR can reach 20.6+/-1.2 dB while signal averaging reduces to 128 pulses from thousands to tens of thousands times, and the signal acquisition time accelerates to less than 0.2 s in each A-scan, especially the volume of the total radiation source is only 10 × 3 × 3 cm3. It demonstrated that the pulsed semiconductor laser could be a candidate of photoacoustic equipment for daily clinical application.

Research and development for improved lead-salt diode lasers

NASA Technical Reports Server (NTRS)

Butler, J. F.

1976-01-01

A substantial increase in output power levels for lead-salt diode lasers, through the development of improved fabrication methods, as demonstrated. The goal of 1 mW of CW, single-mode, single-ended power output, was achieved, with exceptional devices exhibiting values greater than 8 mW. It was found that the current tuning rate could be controlled by adjusting the p-n junction depth, allowing the tuning rate to be optimized for particular applications. An unexpected phenomenon was encountered when crystal composition was observed to be significantly altered by annealing at temperatures as low as 600 C; the composition was changed by transport of material through the vapor phase. This effect caused problems in obtaining diode lasers with the desired operating characteristics. It was discovered that the present packaging method introduces gross damaging effects in the laser crystal through pressure applied by the C-bend.

Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

NASA Astrophysics Data System (ADS)

Hansen, Anders K.; Jensen, Ole B.; Sumpf, Bernd; Erbert, Götz; Unterhuber, Angelika; Drexler, Wolfgang; Andersen, Peter E.; Petersen, Paul Michael

2014-02-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re-focusing and dispersion compensating optics between the two nonlinear crystals. In the low-power limit, such a cascade of two crystals has the theoretical potential for generation of four times as much power as a single crystal without adding significantly to the complexity of the system. The experimentally achieved power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications, such as optical coherence tomography or multimodal imaging devices, e.g., FTCARS-OCT, based on a strongly pumped ultrafast Ti:Sapphire laser.

Single-state electronic ballast with dimming feature and unity power factor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, T.F.; Yu, T.H.; Chiang, M.C.

1998-05-01

Analysis, design, and practical consideration of a single-stage electronic ballast with dimming feature and unity power factor are presented in this paper. The proposed single-stage ballast is the combination of a boost converter and a half-bridge series-resonant parallel-loaded inverter. The boost semistage working in the discontinuous conduction mode functions as a power factor corrector and the inverter semistage operated above resonance are employed to ballast the lamp. Replacing the lamp with the plasma model, analysis of the ballast is fulfilled. The dimming feature is carried out by pulse-width modulation (PWM) and variable-frequency controls simultaneously. The proposed single-stage ballast is suitablemore » for applications with moderate power level and low-line voltage while requiring a high-output voltage. It can save a controller, an active switch and its driver, reduce size, and possibly increase system reliability while requiring two additional diodes over a conventional two-stage system. A prototype was implemented to verify the theoretical discussion. The hardware measurements have shown that the desired performance can be achieved feasibly.« less

The effect of the hole injection layer on the performance of single layer organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenjin, Zeng; Ran, Bi; Hongmei, Zhang, E-mail: iamhmzhang@njupt.edu.cn, E-mail: iamwhuang@njupt.edu.cn

2014-12-14

Efficient single-layer organic light-emitting diodes (OLEDs) were reported based on a green fluorescent dye 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7–tetramethyl-1H,5H,11H-(1) benzopyropyrano (6,7-8-I,j)quinolizin-11-one (C545T). Herein, poly(3,4-ethylenedioxy thiophene) poly(styrene sulfonate) were, respectively, applied as the injection layer for comparison. The hole transport properties of the emission layer with different hole injection materials are well investigated via current-voltage measurement. It was clearly found that the hole injection layers (HILs) play an important role in the adjustment of the electron/hole injection to attain transport balance of charge carriers in the single emission layer of OLEDs with electron-transporting host. The layer of tris-(8-hydroxyquinoline) aluminum played a dual role of hostmore » and electron-transporting materials within the emission layer. Therefore, appropriate selection of hole injection layer is a key factor to achieve high efficiency OLEDs with single emission layer.« less

Small field out-put factors comparison between ion chambers and diode dedectors for different photon energies

NASA Astrophysics Data System (ADS)

Tas, B.; Durmus, I. F.

2018-02-01

To compare small fields out-put factors of linear accelerator by using different ion chambers and diode dedectors for different photon energies. We measured small fields (1×1 to 5×5 cm2) out-put factors by using IBA® cc003 nano chamber, cc01 Razor, cc01, cc04, cc13, fc65 ion chambers and SFD, Razor diode dedectors for 6MV, 10MV, 15MV, 6MV FFF and 10MV FFF energies. We determined the most compatible out-put factors between ion chamber and diode dedector by using cc003 nano ion chamber for 1×1cm2 field size. We determined less than %2 dose difference between cc003 nano chamber, cc01 Razor, cc01, cc04 and cc13 ion chambers from 2×2 to 5×5 cm2. We determined %12±2 and %13±1 underestimate doses by using cc01 and cc13 ion chambers, also we determined %57±2 underesimate dose by using fc65 ion chamber's than razor diode for 1×1 cm2 field size. These results show that we shouldn't measure out-put factors of 1×1 cm2 field size by using cc01, cc13 and fc65 ion chambers. The dose difference between SFD and Razor diodes were determined less than %1.5. If we would like to use ion chambers for ≤1×1cm2 field size out-put measurement, we should use correction factor while commisionning linear accelerator. Otherwise we could determine underestimate dose by using ion chambers.

Dual light-emitting diode-based multichannel microscopy for whole-slide multiplane, multispectral and phase imaging.

PubMed

Liao, Jun; Wang, Zhe; Zhang, Zibang; Bian, Zichao; Guo, Kaikai; Nambiar, Aparna; Jiang, Yutong; Jiang, Shaowei; Zhong, Jingang; Choma, Michael; Zheng, Guoan

2018-02-01

We report the development of a multichannel microscopy for whole-slide multiplane, multispectral and phase imaging. We use trinocular heads to split the beam path into 6 independent channels and employ a camera array for parallel data acquisition, achieving a maximum data throughput of approximately 1 gigapixel per second. To perform single-frame rapid autofocusing, we place 2 near-infrared light-emitting diodes (LEDs) at the back focal plane of the condenser lens to illuminate the sample from 2 different incident angles. A hot mirror is used to direct the near-infrared light to an autofocusing camera. For multiplane whole-slide imaging (WSI), we acquire 6 different focal planes of a thick specimen simultaneously. For multispectral WSI, we relay the 6 independent image planes to the same focal position and simultaneously acquire information at 6 spectral bands. For whole-slide phase imaging, we acquire images at 3 focal positions simultaneously and use the transport-of-intensity equation to recover the phase information. We also provide an open-source design to further increase the number of channels from 6 to 15. The reported platform provides a simple solution for multiplexed fluorescence imaging and multimodal WSI. Acquiring an instant focal stack without z-scanning may also enable fast 3-dimensional dynamic tracking of various biological samples. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

NASA Astrophysics Data System (ADS)

He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

2017-02-01

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Current rectification in a single molecule diode: the role of electrode coupling.

PubMed

Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

2015-07-24

We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10(5) A cm(-2). By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

Current rectification in a single molecule diode: the role of electrode coupling

NASA Astrophysics Data System (ADS)

Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

2015-07-01

We demonstrate large rectification ratios (\\gt 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 105 A cm-2. By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Metal-organic vapor phase epitaxy of (GaAl)As for 0.85-μm laser diodes

NASA Astrophysics Data System (ADS)

Jacobs, K.; Bugge, F.; Butzke, G.; Lehmann, L.; Schimko, R.

1988-11-01

Metal-organic vapor phase epitaxy was used to grow stripe heterolaser diodes that were hitherto fabricated by liquid phase epitaxy. The main relationships between the growth parameters (partial input pressures, temperatures) and the properties of materials (thicknesses, solid-solution compositions, carrier densities) were investigated. The results were in full agreement with the mechanism of growth controlled by a vapor-phase diffusion. The results achieved routinely in the growth of GaAs are reported. It is shown that double heterostructure laser diodes fabricated by metal-organic vapor phase epitaxy compete favorably with those grown so far by liquid phase epitaxy, including their degradation and reliability.

Modeling silicon diode energy response factors for use in therapeutic photon beams.

PubMed

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

NASA Technical Reports Server (NTRS)

Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

2010-01-01

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

PubMed

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Off-axis spectral beam combining of Bragg reflection waveguide photonic crystal diode lasers

NASA Astrophysics Data System (ADS)

Sun, Fangyuan; Wang, Lijie; Zhao, Yufei; Hou, Guanyu; Shu, Shili; Zhang, Jun; Peng, Hangyu; Tian, Sicong; Tong, Cunzhu; Wang, Lijun

2018-06-01

The spectral beam combining (SBC) of Bragg reflection waveguide photonic crystal (BRW-PC) diode lasers was studied for the first time. An off-axis feedback system was constructed using a stripe mirror and a spatial filter to control beam quality in the external cavity. It was found that the BRW-PC diode lasers with a low divergence and a circular beam provided a simplified and cost-effective SBC. The off-axis feedback broke the beam quality limit of a single element, and an M 2 factor of 3.8 times lower than that of a single emitter in the slow axis was demonstrated.

Employment of single-diode model to elucidate the variations in photovoltaic parameters under different electrical and thermal conditions

PubMed Central

Hameed, Shilan S.; Aziz, Fakhra; Sulaiman, Khaulah; Ahmad, Zubair

2017-01-01

In this research work, numerical simulations are performed to correlate the photovoltaic parameters with various internal and external factors influencing the performance of solar cells. Single-diode modeling approach is utilized for this purpose and theoretical investigations are compared with the reported experimental evidences for organic and inorganic solar cells at various electrical and thermal conditions. Electrical parameters include parasitic resistances (Rs and Rp) and ideality factor (n), while thermal parameters can be defined by the cells temperature (T). A comprehensive analysis concerning broad spectral variations in the short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) is presented and discussed. It was generally concluded that there exists a good agreement between the simulated results and experimental findings. Nevertheless, the controversial consequence of temperature impact on the performance of organic solar cells necessitates the development of a complementary model which is capable of well simulating the temperature impact on these devices performance. PMID:28793325

Single mode, short cavity, Pb-salt diode lasers operating in the 5, 10, and 30-microns spectral regions

NASA Technical Reports Server (NTRS)

Linden, K. J.

1985-01-01

Pb-salt diode lasers are being used as frequency-tunable infrared sources in high resolution spectroscopy and heterodyne detection applications. Recent advances in short cavity, stripe-geometry laser configurations have led to significant increases in maximum CW operating temperature, single mode operation, and increased single mode tuning range. This paper describes short cavity, stripe geometry lasers operating in the 5, 10, and 30-microns spectral regions, with single mode tuning ranges of over 6/cm.

Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy

NASA Technical Reports Server (NTRS)

Pandey, Raghvendra K. (Inventor); Raina, Kanwal (Inventor); Solayappan, Narayanan (Inventor)

1994-01-01

A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83 K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown

NASA Astrophysics Data System (ADS)

Wahab, Q.; Karlsteen, M.; Nur, O.; Hultman, L.; Willander, M.; Sundgren, J.-E.

1996-09-01

3C-SiC/Si heterojunction diodes were prepared by reactive magnetron sputtering of pure Si in CH4-Ar discharge on Si(111) substrates kept at temperatures (Ts) ranging from 800 to 1000°C. A good diode rectification process started for films grown at Ts≤900°C. Heterojunction diodes grown at Ts = 850°C showed the best performance with a saturation current density of 2.4 × 10-4 A cm-2. Diode reverse breakdown was obtained at a voltage of -110 V. The doping concentration (Nd) of the 3C-SiC films was calculated from 1/C2 vs V plot to be 3 × 1015 cm-3. Band offset values obtained were -0.27 and 1.35 eV for the conduction and valence band, respectively. X-ray diffraction analysis revealed the film grown at Ts = 850°C to be single-phase 3C-SiC. The full width at half maximum of the 3C-SiC(111) peak was only 0.25 degree. Cross-sectional transmission electron microscopy showed the film to be highly (111)-oriented with an epitaxial columnar structure of double positioning domain boundaries.

Electrical and optical 3D modelling of light-trapping single-photon avalanche diode

NASA Astrophysics Data System (ADS)

Zheng, Tianzhe; Zang, Kai; Morea, Matthew; Xue, Muyu; Lu, Ching-Ying; Jiang, Xiao; Zhang, Qiang; Kamins, Theodore I.; Harris, James S.

2018-02-01

Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.

Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica

2013-12-15

We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

Approximate Single-Diode Photovoltaic Model for Efficient I-V Characteristics Estimation

PubMed Central

Ting, T. O.; Zhang, Nan; Guan, Sheng-Uei; Wong, Prudence W. H.

2013-01-01

Precise photovoltaic (PV) behavior models are normally described by nonlinear analytical equations. To solve such equations, it is necessary to use iterative procedures. Aiming to make the computation easier, this paper proposes an approximate single-diode PV model that enables high-speed predictions for the electrical characteristics of commercial PV modules. Based on the experimental data, statistical analysis is conducted to validate the approximate model. Simulation results show that the calculated current-voltage (I-V) characteristics fit the measured data with high accuracy. Furthermore, compared with the existing modeling methods, the proposed model reduces the simulation time by approximately 30% in this work. PMID:24298205

Investigation of single lateral mode for 852nm diode lasers with ridge waveguide design

NASA Astrophysics Data System (ADS)

Liu, Chu; Guan, Baolu; Mi, Guoxin; Liao, Yiru; Liu, Zhenyang; Li, Jianjun; Xu, Chen

2016-11-01

852nm Narrow linewidth lasers can be widely used in the field of ultra-fine spectrum measurement, Cs atomic clock control, satellite and optical fiber communication and so on. Furthermore, the stability of the single lateral mode is a very important condition to guarantee the narrow linewidth lasers. Here we investigate experimentally the influence of the narrow ridge structure and asymmetrical waveguide design on the stability single lateral mode of an 852nm diode laser. According to the waveguide theoretical analysis, ridge mesa etch depth (Δη , related to the refractive index difference of parallel to the junction) and ridge mesa width (the narrower the more control force to low order mode) are the main elements for lateral modes. In this paper, we designed different structures to investigate and verify major factors for lateral mode by experiment, and to confirm our thought. Finally, the 5μm mesa ridge laser, 800nm etch depth, with groove structure obtains excellent steady single lateral mode output by 150mA operating current and 30°C temperature. The optical spectrum FWHM is 0.5nm and side mode suppression ratio is 27dBm with uncoated. The laser with 1mm cavity length showed the threshold current of 50mA, a lasing wavelength of λ = 852.6nm, slope efficiency of above 0.7mW/mA. We accomplished single lateral mode of ridge waveguide edge-emitting lasers which can also be used as a laser source in the ultra-narrow linewidth external cavity laser system.

Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range

NASA Technical Reports Server (NTRS)

Hsieh, H.-H.; Fonstad, C. G.

1980-01-01

Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

PubMed Central

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

NASA Astrophysics Data System (ADS)

Tawara, T.; Matsunaga, S.; Fujimoto, T.; Ryo, M.; Miyazato, M.; Miyazawa, T.; Takenaka, K.; Miyajima, M.; Otsuki, A.; Yonezawa, Y.; Kato, T.; Okumura, H.; Kimoto, T.; Tsuchida, H.

2018-01-01

We investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations. The injected carrier concentration was calculated using a device simulation that took into account the measured accumulated charge in the drift layer during diode turn-off. The dislocation velocity was strongly dependent on the injected hole concentration, which represents the excess carrier concentration. The activation energy of the dislocation velocity was quite small (below 0.001 eV between 310 and 386 K) over a fixed range of hole concentrations. The average threshold hole concentration required for the expansion of bar-shaped single Shockley-type stacking faults at the interface between the buffer layer and the substrate was determined to be 1.6-2.5 × 1016 cm-3 for diodes with a p-type epitaxial anode with various Al concentrations.

Schlieren with a laser diode source

NASA Technical Reports Server (NTRS)

Burner, A. W.; Franke, J. M.

1981-01-01

The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

Molecular Diode Studies Based on a Highly Sensitive Molecular Measurement Technique.

PubMed

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-04-26

In 1974, molecular electronics pioneers Mark Ratner and Arieh Aviram predicted that a single molecule could act as a diode, in which electronic current can be rectified. The electronic rectification property of the diode is one of basic functions of electronic components and since then, the molecular diode has been investigated as a first single-molecule device that would have a practical application. In this review, we first describe the experimental fabrication and electronic characterization techniques of molecular diodes consisting of a small number of molecules or a single molecule. Then, two main mechanisms of the rectification property of the molecular diode are discussed. Finally, representative results for the molecular diode are reviewed and a brief outlook on crucial issues that need to be addressed in future research is discussed.

Molecular Diode Studies Based on a Highly Sensitive Molecular Measurement Technique

PubMed Central

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-01-01

In 1974, molecular electronics pioneers Mark Ratner and Arieh Aviram predicted that a single molecule could act as a diode, in which electronic current can be rectified. The electronic rectification property of the diode is one of basic functions of electronic components and since then, the molecular diode has been investigated as a first single-molecule device that would have a practical application. In this review, we first describe the experimental fabrication and electronic characterization techniques of molecular diodes consisting of a small number of molecules or a single molecule. Then, two main mechanisms of the rectification property of the molecular diode are discussed. Finally, representative results for the molecular diode are reviewed and a brief outlook on crucial issues that need to be addressed in future research is discussed. PMID:28445393

Inelastic transport and low-bias rectification in a single-molecule diode.

PubMed

Hihath, Joshua; Bruot, Christopher; Nakamura, Hisao; Asai, Yoshihiro; Díez-Pérez, Ismael; Lee, Youngu; Yu, Luping; Tao, Nongjian

2011-10-25

Designing, controlling, and understanding rectification behavior in molecular-scale devices has been a goal of the molecular electronics community for many years. Here we study the transport behavior of a single molecule diode, and its nonrectifying, symmetric counterpart at low temperatures, and at both low and high biases to help elucidate the electron-phonon interactions and transport mechanisms in the rectifying system. We find that the onset of current rectification occurs at low biases, indicating a significant change in the elastic transport pathway. However, the peaks in the inelastic electron tunneling (IET) spectrum are antisymmetric about zero bias and show no significant changes in energy or intensity in the forward or reverse bias directions, indicating that despite the change in the elastic transmission probability there is little impact on the inelastic pathway. These results agree with first principles calculations performed to evaluate the IETS, which also allow us to identify which modes are active in the single molecule junction.

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

A new approach to the extraction of single exponential diode model parameters

NASA Astrophysics Data System (ADS)

Ortiz-Conde, Adelmo; García-Sánchez, Francisco J.

2018-06-01

A new integration method is presented for the extraction of the parameters of a single exponential diode model with series resistance from the measured forward I-V characteristics. The extraction is performed using auxiliary functions based on the integration of the data which allow to isolate the effects of each of the model parameters. A differentiation method is also presented for data with low level of experimental noise. Measured and simulated data are used to verify the applicability of both proposed method. Physical insight about the validity of the model is also obtained by using the proposed graphical determinations of the parameters.

A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode

PubMed Central

Romeira, Bruno; Seunarine, Kris; Ironside, Charles N.; Kelly, Anthony E.; Figueiredo, José M. L.

2013-01-01

We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below −100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452

Carbon-Nanotube Schottky Diodes

NASA Technical Reports Server (NTRS)

Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

2006-01-01

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

NASA Technical Reports Server (NTRS)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Systematic error of diode thermometer.

PubMed

Iskrenovic, Predrag S

2009-08-01

Semiconductor diodes are often used for measuring temperatures. The forward voltage across a diode decreases, approximately linearly, with the increase in temperature. The applied method is mainly the simplest one. A constant direct current flows through the diode, and voltage is measured at diode terminals. The direct current that flows through the diode, putting it into operating mode, heats up the diode. The increase in temperature of the diode-sensor, i.e., the systematic error due to self-heating, depends on the intensity of current predominantly and also on other factors. The results of systematic error measurements due to heating up by the forward-bias current have been presented in this paper. The measurements were made at several diodes over a wide range of bias current intensity.

Modelling and Simulation of Single-Phase Series Active Compensator for Power Quality Improvement

NASA Astrophysics Data System (ADS)

Verma, Arun Kumar; Mathuria, Kirti; Singh, Bhim; Bhuvaneshwari, G.

2017-10-01

A single-phase active series compensator is proposed in this work to reduce harmonic currents at the ac mains and to regulate the dc link voltage of a diode bridge rectifier (DBR) that acts as the front end converter for a voltage source inverter feeding an ac motor. This ac motor drive is used in any of the domestic, commercial or industrial appliances. Under fluctuating ac mains voltages, the dc link voltage of the DBR depicts wide variations and hence the ac motor is used at reduced rating as compared to its name-plate rating. The active series compensator proposed here provides dual functions of improving the power quality at the ac mains and regulating the dc link voltage thus averting the need for derating of the ac motor.

Laser diode technology for coherent communications

NASA Technical Reports Server (NTRS)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Radiation-damage-induced phasing: a case study using UV irradiation with light-emitting diodes.

PubMed

de Sanctis, Daniele; Zubieta, Chloe; Felisaz, Franck; Caserotto, Hugo; Nanao, Max H

2016-03-01

Exposure to X-rays, high-intensity visible light or ultraviolet radiation results in alterations to protein structure such as the breakage of disulfide bonds, the loss of electron density at electron-rich centres and the movement of side chains. These specific changes can be exploited in order to obtain phase information. Here, a case study using insulin to illustrate each step of the radiation-damage-induced phasing (RIP) method is presented. Unlike a traditional X-ray-induced damage step, specific damage is introduced via ultraviolet light-emitting diodes (UV-LEDs). In contrast to UV lasers, UV-LEDs have the advantages of small size, low cost and relative ease of use.

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

NASA Technical Reports Server (NTRS)

Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

2014-01-01

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

Fully industrialised single photon avalanche diodes

NASA Astrophysics Data System (ADS)

Pellegrini, S.; Rae, B.

2017-05-01

Single Photon Avalanche diodes (SPADs) were first realized more than five decades ago[1][1], and have now been industrialized for mass production in the 130 nm CMOS technology node by STMicroelectronics (STM). In this paper we present the latest STM SPAD with an excellent NIR photon detection probability (>5% at 850nm), a dark count rate median of 100 cps at room temperature and a low breakdown voltage of 14.2V. The dead time of the SPAD is approximately 25 ns, leading to a maximum count rate of 40 Mcps. Thanks to the 130 nm gate length of the CMOS technology used and the associated high digital gate density, complex digital signal processing can be implemented allowing fully integrated systems to be realized. The low bias required by the SPAD makes it possible for voltage generation to be achieved on-chip (e.g. charge pumped). We introduce our first generation time-of-flight system (VL6180) based on the STM SPAD technology, which is capable of ranging up to 60 cm in 60 ms. Ranging capabilities and accuracy are measured using a set of moving targets with reflectance of 5%, 17% and 88% in a fully automated test bed. To the best of our knowledge this was the first high volume SPAD-based device. To our knowledge this is the first time details of SPAD performance over production volumes and lifetime have been presented.

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2016-12-01

The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

Ultra-fast quantum randomness generation by accelerated phase diffusion in a pulsed laser diode.

PubMed

Abellán, C; Amaya, W; Jofre, M; Curty, M; Acín, A; Capmany, J; Pruneri, V; Mitchell, M W

2014-01-27

We demonstrate a high bit-rate quantum random number generator by interferometric detection of phase diffusion in a gain-switched DFB laser diode. Gain switching at few-GHz frequencies produces a train of bright pulses with nearly equal amplitudes and random phases. An unbalanced Mach-Zehnder interferometer is used to interfere subsequent pulses and thereby generate strong random-amplitude pulses, which are detected and digitized to produce a high-rate random bit string. Using established models of semiconductor laser field dynamics, we predict a regime of high visibility interference and nearly complete vacuum-fluctuation-induced phase diffusion between pulses. These are confirmed by measurement of pulse power statistics at the output of the interferometer. Using a 5.825 GHz excitation rate and 14-bit digitization, we observe 43 Gbps quantum randomness generation.

Properties and Frequency Conversion of High-Brightness Diode-Laser Systems

NASA Astrophysics Data System (ADS)

Boller, Klaus-Jochen; Beier, Bernard; Wallenstein, Richard

An overview of recent developments in the field of high-power, high-brightness diode-lasers, and the optically nonlinear conversion of their output into other wavelength ranges, is given. We describe the generation of continuous-wave (CW) laser beams at power levels of several hundreds of milliwatts to several watts with near-perfect spatial and spectral properties using Master-Oscillator Power-Amplifier (MOPA) systems. With single- or double-stage systems, using amplifiers of tapered or rectangular geometry, up to 2.85 W high-brightness radiation is generated at wavelengths around 810nm with AlGaAs diodes. Even higher powers, up to 5.2W of single-frequency and high spatial quality beams at 925nm, are obtained with InGaAs diodes. We describe the basic properties of the oscillators and amplifiers used. A strict proof-of-quality for the diode radiation is provided by direct and efficient nonlinear optical conversion of the diode MOPA output into other wavelength ranges. We review recent experiments with the highest power levels obtained so far by direct frequency doubling of diode radiation. In these experiments, 100mW single-frequency ultraviolet light at 403nm was generated, as well as 1W of single-frequency blue radiation at 465nm. Nonlinear conversion of diode radiation into widely tunable infrared radiation has recently yielded record values. We review the efficient generation of widely tunable single-frequency radiation in the infrared with diode-pumped Optical Parametric Oscillators (OPOs). With this system, single-frequency output radiation with powers of more than 0.5W was generated, widely tunable around wavelengths of 2.1,m and 1.65,m and with excellent spectral and spatial quality. These developments are clear indicators of recent advances in the field of high-brightness diode-MOPA systems, and may emphasize their future central importance for applications within a vast range of optical

Low-cost, single-mode diode-pumped Cr:Colquiriite lasers.

PubMed

Demirbas, Umit; Li, Duo; Birge, Jonathan R; Sennaroglu, Alphan; Petrich, Gale S; Kolodziejski, Leslie A; Kaertner, Franz X; Fujimoto, James G

2009-08-03

We present three Cr3+:Colquiriite lasers as low-cost alternatives to Ti:Sapphire laser technology. Single-mode laser diodes, which cost only $150 each, were used as pump sources. In cw operation, with approximately 520 mW of absorbed pump power, up to 257, 269 and 266 mW of output power and slope efficiencies of 53%, 62% and 54% were demonstrated for Cr:LiSAF, Cr:LiSGaF and Cr:LiCAF, respectively. Record cw tuning ranges from 782 to 1042 nm for Cr:LiSAF, 777 to 977 nm for Cr:LiSGaF, and 754 to 871 nm for Cr:LiCAF were demonstrated. In cw mode-locking experiments using semiconductor saturable absorber mirrors at 800 and 850 nm, Cr:Colquiriite lasers produced approximately 50-100 fs pulses with approximately 1-2.5 nJ pulse energies at approximately 100 MHz repetition rate. Electrical-to-optical conversion efficiencies of 8% in mode-locked operation and 12% in cw operation were achieved.

Diode-side-pumped 131 W, 1319 nm single-wavelength cw Nd:YAG laser.

PubMed

Haiyong, Zhu; Ge, Zhang; Chenghui, Huang; Yong, Wei; Lingxiong, Huang; Jing, Chen; Weidong, Chen; Zhenqiang, Chen

2007-01-20

A diode-side-pumped high-power 1319 nm single-wavelength Nd:YAG continuous wave (cw) laser is described. Through reasonable coating design of the cavity mirrors, the 1064 nm strongest line as well as the 1338 nm one have been successfully suppressed. The laser output powers corresponding to four groups of different output couplers operating at 1319 nm single wavelength have been compared. The output coupler with the transmission T=5.3% has the highest output power, and a 131 W cw output power was achieved at the pumping power of 555 W. The optical-optical conversion efficiency is 23.6%, and the slope efficiency is 46%. The output power is higher than the total output power of the dual-wavelength laser operating at 1319 nm and 1338 nm in the experiment.

Stable Light-Emitting Diodes Using Phase-Pure Ruddlesden-Popper Layered Perovskites.

PubMed

Tsai, Hsinhan; Nie, Wanyi; Blancon, Jean-Christophe; Stoumpos, Constantinos C; Soe, Chan Myae Myae; Yoo, Jinkyoung; Crochet, Jared; Tretiak, Sergei; Even, Jacky; Sadhanala, Aditya; Azzellino, Giovanni; Brenes, Roberto; Ajayan, Pulickel M; Bulović, Vladimir; Stranks, Samuel D; Friend, Richard H; Kanatzidis, Mercouri G; Mohite, Aditya D

2018-02-01

State-of-the-art light-emitting diodes (LEDs) are made from high-purity alloys of III-V semiconductors, but high fabrication cost has limited their widespread use for large area solid-state lighting. Here, efficient and stable LEDs processed from solution with tunable color enabled by using phase-pure 2D Ruddlesden-Popper (RP) halide perovskites with a formula (CH 3 (CH 2 ) 3 NH 3 ) 2 (CH 3 NH 3 ) n -1 Pb n I 3 n +1 are reported. By using vertically oriented thin films that facilitate efficient charge injection and transport, efficient electroluminescence with a radiance of 35 W Sr -1 cm -2 at 744 nm with an ultralow turn-on voltage of 1 V is obtained. Finally, operational stability tests suggest that phase purity is strongly correlated to stability. Phase-pure 2D perovskites exhibit >14 h of stable operation at peak operating conditions with no droop at current densities of several Amperes cm -2 in comparison to mixtures of 2D/3D or 3D perovskites, which degrade within minutes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auf der Maur, M., E-mail: auf.der.maur@ing.uniroma2.it; Di Carlo, A.; Galler, B.

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.

Power blue and green laser diodes and their applications

NASA Astrophysics Data System (ADS)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Intensity noise in diode-pumped single-frequency Nd:YAG lasers and its control by electronic feedback

NASA Technical Reports Server (NTRS)

Kane, Thomas J.

1990-01-01

The power spectrum of the relative intensity noise (RIN) of single-frequency diode-pumped Nd:YAG lasers is observed to be shot-noise limited at frequencies above 20 MHz for a photocurrent of up to 4.4 mA. Relaxation oscillations result in noise 60-70 dB above shot noise at a few hundred kHz. These relaxation oscillations have been suppressed using electronic feedback.

Subsurface optical stimulation of rat prostate cavernous nerves using a continuous wave, single mode, 1490 nm diode laser

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Stahl, Charlotte S. D.; Hutchens, Thomas C.; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2013-03-01

Successful identification of the cavernous nerves (CN's) during radical prostatectomy requires detection of the CN's through a thin layer of overlying fascia. This study explores the 1490 nm infrared (IR) diode laser wavelength for rapid and deep subsurface CN stimulation in a rat model, in vivo. A 150-mW, 1490-nm diode laser providing an optical penetration depth of 520 μm was used to stimulate the CN's in 8 rats through a single mode fiber optic probe with 1-mm-diameter spot and 15 s irradiation time. Successful ONS was judged by an intracavernous pressure response (ICP) in the rat penis. Subsurface ONS at 1490 nm was also compared with previous studies using 1455 and 1550 nm IR diode laser wavelengths. ONS was observed through fascia layers up to 380 μm thick using an incident laser power of 50 mW. ICP response times as short as 4.6 +/- 0.2 s were recorded using higher laser powers bust still below the nerve damage threshold. The 1490-nm diode laser represents a compact, low cost, high power, and high quality infrared light source for use in ONS. This wavelength provides deeper optical penetration than 1455 nm and more rapid and efficient nerve stimulation than 1550 nm.

High-power diode lasers for optical communications applications

NASA Technical Reports Server (NTRS)

Carlin, D. B.; Goldstein, B.; Channin, D. J.

1985-01-01

High-power, single-mode, double-heterojunction AlGaAs diode lasers are being developed to meet source requirements for both fiber optic local area network and free space communications systems. An individual device, based on the channeled-substrate-planar (CSP) structure, has yielded single spatial and longitudinal mode outputs of up to 90 mW CW, and has maintained a single spatial mode to 150 mW CW. Phase-locked arrays of closely spaced index-guided lasers have been designed and fabricated with the aim of multiplying the outputs of the individual devices to even higher power levels in a stable, single-lobe, anastigmatic beam. The optical modes of the lasers in such arrays can couple together in such a way that they appear to be emanating from a single source, and can therefore be efficiently coupled into optical communications systems. This paper will review the state of high-power laser technology and discuss the communication system implications of these devices.

Visible high power fiber coupled diode lasers

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

2018-02-01

In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

Comparative study of blue laser diode driven cerium-doped single crystal phosphors in application of high-power lighting and display technologies

NASA Astrophysics Data System (ADS)

Balci, Mustafa H.; Chen, Fan; Cunbul, A. Burak; Svensen, Øyvind; Akram, M. Nadeem; Chen, Xuyuan

2018-02-01

Cerium-doped single crystals (Ce:LuAG, Ce:YAG, Ce:GAGG, Ce:GdYAG) have been investigated as stationary phosphor candidates for blue laser driven solid-state lighting without heat sink. The luminous properties of the single crystals are superior compared to the commercial ceramic powder phosphor wheels (Ce3+: Y3Al5O12). The high-power blue laser diode driven temperature increase of the crystals versus quantum efficiency is experimentally measured and discussed. We have carried out realistic measurements at high excitation power levels and at high temperatures. Limitation of phosphors as stationary sources is determined for commercial usage. The measurements were done without any heat sink to see the relative comparison of SCPs in the worst-case scenarios. The results indicate that Gd and Ga addition decreases the luminescence quenching temperature. Based on their superior properties, these single crystals can serve as potential phosphor candidates for high-power blue diode laser driven picture projectors for the green and red channels.

V-shaped resonators for addition of broad-area laser diode arrays

DOEpatents

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Coupled Electro-Thermal Simulations of Single Event Burnout in Power Diodes

NASA Astrophysics Data System (ADS)

Albadri, A. M.; Schrimpf, R. D.; Walker, D. G.; Mahajan, S. V.

2005-12-01

Power diodes may undergo destructive failures when they are struck by high-energy particles during the off state (high reverse-bias voltage). This paper describes the failure mechanism using a coupled electro-thermal model. The specific case of a 3500-V diode is considered and it is shown that the temperatures reached when high voltages are applied are sufficient to cause damage to the constituent materials of the diode. The voltages at which failure occurs (e.g., 2700 V for a 17-MeV carbon ion) are consistent with previously reported data. The simulation results indicate that the catastrophic failures result from local heating caused by avalanche multiplication of ion-generated carriers.

An analytical-numerical approach for parameter determination of a five-parameter single-diode model of photovoltaic cells and modules

NASA Astrophysics Data System (ADS)

Hejri, Mohammad; Mokhtari, Hossein; Azizian, Mohammad Reza; Söder, Lennart

2016-04-01

Parameter extraction of the five-parameter single-diode model of solar cells and modules from experimental data is a challenging problem. These parameters are evaluated from a set of nonlinear equations that cannot be solved analytically. On the other hand, a numerical solution of such equations needs a suitable initial guess to converge to a solution. This paper presents a new set of approximate analytical solutions for the parameters of a five-parameter single-diode model of photovoltaic (PV) cells and modules. The proposed solutions provide a good initial point which guarantees numerical analysis convergence. The proposed technique needs only a few data from the PV current-voltage characteristics, i.e. open circuit voltage Voc, short circuit current Isc and maximum power point current and voltage Im; Vm making it a fast and low cost parameter determination technique. The accuracy of the presented theoretical I-V curves is verified by experimental data.

Raman Spectroscopy with High Power Diode Lasers

NASA Astrophysics Data System (ADS)

Claps, Ricardo

1998-10-01

Our group has demonstrated in the past that it is possible to record, with a high power Diode Laser, Raman spectra of low pressure gases. An external cavity was used to lock the laser into single mode operation. Also, the use of atomic filters permitted the observation of rotational Raman lines only 1 cm-1 apart from the excitation frequency ( J.Sabbaghzadeh, M.Fink, et-all; Applied Physics ) B 60 (1995), p.261-265.. We present now an improved version of the experiment, with beamshaping optics that help to correct the highly astigmatic output of the Diode Laser; this allowed us to put 300 mW of cw power through a multi-pass cell in the sample chamber, `increasing the signal by a factor of ~ 15. We present examples of rotational and vibrational spectra from CO_2, N_2, and air. The results show that we are able to obtain spectra with a S/N ratio of 0.011 per Torr, per √s, which means that we can detect 1 Torr of these gases in a few hours of exposure, at a maximum resolution of 0.85 cm-1 over a range of 200 cm-1. The laser stability in power, frequency and bandwidth, ensures the feasibility of long exposure experiments. We plan to apply the Raman technique to study flow properties of gases under different dynamic conditions; as a result, we expect to use our instrument for the study of the vibrational Raman spectra of alkali-halide dimers in vapour phase at low pressures.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

PubMed

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

Spatial Combining of Laser-Diode Beams for Pumping an NPRO

NASA Technical Reports Server (NTRS)

Gelsinger, Paul; Liu, Duncan; Mulder, Jerry; Aguayo, Francisco

2008-01-01

A free-space optical beam combiner now undergoing development makes it possible to use the outputs of multiple multimode laser diodes to pump a neodymium-doped yttrium aluminum garnet (Nd:YAG) non-planar ring oscillator (NPRO) laser while ensuring that the laser operates at only a single desired frequency. Heretofore, a Nd:YAG NPRO like the present one has been pumped by a single multimode laser-diode beam delivered via an optical fiber. It would be desirable to use multiple pump laser diodes to increase reliability beyond that obtainable from a single pump laser diode. However, as explained in this article, simplistically coupling multiple multimode laser-diode beams through a fiber-optic combiner would entail a significant reduction in coupling efficiency, and lasing would occur at one or more other frequencies in addition to the single desired frequency. To minimize coupling loss, one must ensure that the NA (approximately equal to 0.3) of the combined laser-diode beams is less than the NA of the fiber. The A(Omega) of the laser-diode beam in the slow-axis plane is 1/1.3 as large as that of the fiber. This A(Omega) is small enough to enable efficient coupling of light into the optical fiber, but too large for combining of beams in the slow-axis plane. Therefore, a pair of cylindrical lenses is used to cancel the slow-axis plane magnification introduced by the on-cylindrical lenses used to effect magnification in the fast-axis plane.

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

15 mJ single-frequency Ho:YAG laser resonantly pumped by a 1.9 µm laser diode

NASA Astrophysics Data System (ADS)

Na, Q. X.; Gao, C. Q.; Wang, Q.; Zhang, Y. X.; Gao, M. W.; Ye, Q.; Li, Y.

2016-09-01

A 2.09 µm injection-seeded single-frequency Ho:YAG laser resonantly pumped by a 1.91 µm laser diode is demonstrated for the first time. The seed laser is a continuous wave (CW) Ho:YAG non-planar ring oscillator. 15.15 mJ single-frequency output energy is obtained from the injection-seeded Q-switched Ho:YAG laser, with a pulse repetition rate of 200 Hz and a pulse width of 109 ns. The half-width of the pulse spectrum is measured to be 4.19 MHz by using the heterodyne technique. The fluctuation of the center frequency of the single-frequency pulses is 1.52 MHz (root mean square (RMS)) in 1 h.

High reliability and high performance of 9xx-nm single emitter laser diodes

NASA Astrophysics Data System (ADS)

Bao, L.; Leisher, P.; Wang, J.; Devito, M.; Xu, D.; Grimshaw, M.; Dong, W.; Guan, X.; Zhang, S.; Bai, C.; Bai, J. G.; Wise, D.; Martinsen, R.

2011-03-01

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2012 CFR

2012-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase loads. Single-phase loads shall be connected phase-to-phase in resistance grounded systems. ...

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2014 CFR

2014-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase loads. Single-phase loads shall be connected phase-to-phase in resistance grounded systems. ...

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2013 CFR

2013-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase loads. Single-phase loads shall be connected phase-to-phase in resistance grounded systems. ...

Limitations of silicon diodes for clinical electron dosimetry.

PubMed

Song, Haijun; Ahmad, Munir; Deng, Jun; Chen, Zhe; Yue, Ning J; Nath, Ravinder

2006-01-01

This work investigates the relevance of several factors affecting the response of silicon diode dosemeters in depth-dose scans of electron beams. These factors are electron energy, instantaneous dose rate, dose per pulse, photon/electron dose ratio and electron scattering angle (directional response). Data from the literature and our own experiments indicate that the impact of these factors may be up to +/-15%. Thus, the different factors would have to cancel out perfectly at all depths in order to produce true depth-dose curves. There are reports of good agreement between depth-doses measured with diodes and ionisation chambers. However, our measurements with a Scantronix electron field detector (EFD) diode and with a plane-parallel ionisation chamber show discrepancies both in the build-up and in the low-dose regions, with a ratio up to 1.4. Moreover, the absolute sensitivity of two diodes of the same EFD model was found to differ by a factor of 3, and this ratio was not constant but changed with depth between 5 and 15% in the low-dose regions of some clinical electron beams. Owing to these inhomogeneities among diodes even of the same model, corrections for each factor would have to be diode-specific and beam-specific. All these corrections would have to be determined using parallel plane chambers, as recommended by AAPM TG-25, which would be unrealistic in clinical practice. Our conclusion is that in general diodes are not reliable in the measurement of depth-dose curves of clinical electron beams.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1991-01-01

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1991-02-19

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

Electrically injected GaAsBi/GaAs single quantum well laser diodes

NASA Astrophysics Data System (ADS)

Liu, Juanjuan; Pan, Wenwu; Wu, Xiaoyan; Cao, Chunfang; Li, Yaoyao; Chen, Xiren; Zhang, Yanchao; Wang, Lijuan; Yan, Jinyi; Zhang, Dongliang; Song, Yuxin; Shao, Jun; Wang, Shumin

2017-11-01

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.

30 CFR 77.806 - Connection of single-phase loads.

Code of Federal Regulations, 2010 CFR

2010-07-01

... COAL MINES Surface High-Voltage Distribution § 77.806 Connection of single-phase loads. Single-phase loads, such as transformer primaries, shall be connected phase to phase in resistance grounded systems. ...

New PbSnTe heterojunction laser diode structures with improved performance

NASA Technical Reports Server (NTRS)

Fonstad, C. G.; Kasemset, D.; Hsieh, H. H.; Rotter, S.

1980-01-01

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Quantum Noise in Laser Diodes

NASA Technical Reports Server (NTRS)

Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

1996-01-01

We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

NASA Astrophysics Data System (ADS)

Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

2018-05-01

We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

Phase locking of 2.324 and 2.959 terahertz quantum cascade lasers using a Schottky diode harmonic mixer.

PubMed

Danylov, Andriy; Erickson, Neal; Light, Alexander; Waldman, Jerry

2015-11-01

The 23rd and 31st harmonics of a microwave signal generated in a novel THz balanced Schottky diode mixer were used as a frequency stable reference source to phase lock solid-nitrogen-cooled 2.324 and 2.959 THz quantum cascade lasers. Hertz-level frequency stability was achieved, which was maintained for several hours.

Trap-induced photoconductivity in singlet fission pentacene diodes

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Zhao, Chen; Chen, Bingbing; Luan, Lin

2014-07-01

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

30 CFR 75.905 - Connection of single-phase loads.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Alternating Current Circuits § 75.905 Connection of single-phase loads. [Statutory Provisions] Single-phase... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Connection of single-phase loads. 75.905 Section 75.905 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE...

30 CFR 75.905 - Connection of single-phase loads.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Alternating Current Circuits § 75.905 Connection of single-phase loads. [Statutory Provisions] Single-phase... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Connection of single-phase loads. 75.905 Section 75.905 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE...

Two-wavelength laser-diode heterodyne interferometry with one phasemeter

NASA Astrophysics Data System (ADS)

Onodera, Ribun; Ishii, Yukihiro

1995-12-01

A two-wavelength laser-diode interferometer that is based on heterodyne detection with one phasemeter has been constructed. Two laser diodes are frequency modulated by mutually inverted sawtooth currents on an unbalanced interferometer. One can measure the tested phase at a synthetic wavelength from the sum of the interference beat signals by synchronizing them with the modulation frequency. The experimental result presented shows a phase-measurement range with a 4.7- mu m synthetic wavelength.

Qualification and Selection of Flight Diode Lasers for Space Applications

NASA Technical Reports Server (NTRS)

Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

2010-01-01

The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode

Room-temperature-operation visible-emission semiconductor diode lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.; Nuese, C. J.

1977-01-01

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.

Efficient single-mode (TEM{sub 00}) Nd : YVO{sub 4} laser with longitudinal 808-nm diode pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donin, V I; Yakovin, D V; Yakovin, M D

2013-10-31

A single-mode Nd : YVO{sub 4} laser with unidirectional longitudinal pumping by laser diodes with λ = 808 nm and a power of 40 W is studied. In the TEM{sub 00} mode, the output laser power is 24 W with the optical efficiency η{sub opt} = 57.1 % (slope efficiency 63.3 %), which, as far as we know, is the best result for Nd{sup 3+} : YVO{sub 4} lasers with longitudinal pumping at λ = 808 nm from one face of the active crystal. Estimates of thermal effects show that, using a Nd : YVO{sub 4} crystal (length 20 mm,more » diameter 3 mm, dopant concentration 0.27 at%) with two undoped ends and bidirectional diode pumping with a total power of 170 W, one can obtain an output power of ∼100 W in the TEM{sub 00} mode from one active element. (lasers)« less

AlGaInN laser diode technology for defence, security and sensing applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2014-10-01

The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

Current from a nano-gap hyperbolic diode using shape-factors: Theory

NASA Astrophysics Data System (ADS)

Jensen, Kevin L.; Shiffler, Donald A.; Peckerar, Martin; Harris, John R.; Petillo, John J.

2017-08-01

Quantum tunneling by field emission from nanoscale features or sharp field emission structures for which the anode-cathode gap is nanometers in scale ("nano diodes") experience strong deviations from the planar image charge lowered tunneling barrier used in the Murphy and Good formulation of the Fowler-Nordheim equation. These deviations alter the prediction of total current from a curved surface. Modifications to the emission barrier are modeled using a hyperbolic (prolate spheroidal) geometry to determine the trajectories along which the Gamow factor in a WKB-like treatment is undertaken; a quadratic equivalent potential is determined, and a method of shape factors is used to evaluate the corrected total current from a protrusion or wedge geometry.

High efficient white organic light-emitting diodes with single emissive layer using phosphorescent red, green, and blue dopants

NASA Astrophysics Data System (ADS)

Kim, You-Hyun; Wai Cheah, Kok; Young Kim, Woo

2013-07-01

Phosphorescent white organic light-emitting diodes (PHWOLEDs) with single emissive layer were fabricated by co-doping phosphorescent blue, green, and red emitters with different concentrations. WOLEDs using Ir(piq)3 and Ir(ppy)3 as red and green dopants along with 8% of Firpic as blue dopant with host materials of 4CzPBP in the emissive layer were compared under various doping ratio between Ir(piq)3 and Ir(ppy)3. Triplet-triplet Dexter energy transfer in single emissive PHWOLEDs including three primary colors was saturated from higher triplet energy levels to lower triplet energy levels directly.

Power factor improvement in three-phase networks with unbalanced inductive loads using the Roederstein ESTAmat RPR power factor controller

NASA Astrophysics Data System (ADS)

Diniş, C. M.; Cunţan, C. D.; Rob, R. O. S.; Popa, G. N.

2018-01-01

The paper presents the analysis of a power factor with capacitors banks, without series coils, used for improving power factor for a three-phase and single-phase inductive loads. In the experimental measurements, to improve the power factor, the Roederstein ESTAmat RPR power factor controller can command up to twelve capacitors banks, while experimenting using only six capacitors banks. Six delta capacitors banks with approximately equal reactive powers were used for experimentation. The experimental measurements were carried out with a three-phase power quality analyser which worked in three cases: a case without a controller with all capacitors banks permanently parallel connected with network, and two other cases with power factor controller (one with setting power factor at 0.92 and the other one at 1). When performing experiments with the power factor controller, a current transformer was used to measure the current on one phase (at a more charged or less loaded phase).

Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes

NASA Astrophysics Data System (ADS)

Kaifuchi, Yoshikazu; Yamagata, Yuji; Nogawa, Ryozaburo; Morohashi, Rintaro; Yamada, Yumi; Yamaguchi, Masayuki

2017-02-01

Design optimization of single emitter broad stripe 9xx-nm laser diodes was studied to achieve ultimate high power and high efficiency operation for a use in fiber laser pumping and other industrial applications. We tuned laser vertical layer design and stripe width in terms of optical confinement as well as electrical resistance. As a result, newly designed LDs with 4mm-long cavity and 220 μm-wide stripe successfully demonstrate maximum CW output power as high as 33 W and high efficiency operation of more than 60 % PCE even at 27 W output power. In pulse measurement, the maximum output of 68 W was obtained.

Single-phase and two-phase anaerobic digestion of fruit and vegetable waste: Comparison of start-up, reactor stability and process performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganesh, Rangaraj; Torrijos, Michel, E-mail: michel.torrijos@supagro.inra.fr; Sousbie, Philippe

loss of energy during hydrolysis in the TPAR and the deficit in methane production in the TPMR attributed to COD loss due to biomass synthesis and adsorption of hard COD onto the flocs. These results including the complicated operational procedure of the two-phase process and the economic factors suggested that the single-phase process could be the preferred system for FVW.« less

SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C; Tang, Lixin; Chinthavali, Madhu Sudhan

2014-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side formore » power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.« less

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, H. Y.; Yang, W. C.; Lee, P. Y.

2016-08-22

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of themore » observed device performance enhancements.« less

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

NASA Astrophysics Data System (ADS)

Barletta, M.; Rubino, G.; Gisario, A.

2011-02-01

The use of a continuous wave-high power diode laser for removing surface Co-binder from Co-cemented tungsten carbide (WC-Co (5.8 wt%.)) hardmetal slabs was investigated. Combined scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction analyses were performed in order to study the phase transformations and micro-structural modifications of the WC-Co substrates occurring during and after laser irradiation. The micro-structure of the WC-Co progressively transforms as energy density increased, exhibiting stronger removal of Co and WC grain growth. At very high energy density, local melting of the WC grains with the formation of big agglomerates of interlaced grains is observed, and the crystalline structure of the irradiated substrate shows the presence of a brittle ternary eutectic phase of W, Co and C (often referred to as the η-phase). The latter can be detrimental to the mechanical properties of WC-Co. Therefore, the proper adjustment of the laser processing parameters plays a crucial role in surface treatments of WC-Co substrates prior to post-processing like diamond deposition.

Numerical aperture limits on efficient ball lens coupling of laser diodes to single-mode fibers with defocus to balance spherical aberration

NASA Technical Reports Server (NTRS)

Wilson, R. Gale

1994-01-01

The potential capabilities and limitations of single ball lenses for coupling laser diode radiation to single-mode optical fibers have been analyzed; parameters important to optical communications were specifically considered. These parameters included coupling efficiency, effective numerical apertures, lens radius, lens refractive index, wavelength, magnification in imaging the laser diode on the fiber, and defocus to counterbalance spherical aberration of the lens. Limiting numerical apertures in object and image space were determined under the constraint that the lens perform to the Rayleigh criterion of 0.25-wavelength (Strehl ratio = 0.80). The spherical aberration-defocus balance to provide an optical path difference of 0.25 wavelength units was shown to define a constant coupling efficiency (i.e., 0.56). The relative numerical aperture capabilities of the ball lens were determined for a set of wavelengths and associated fiber-core diameters of particular interest for single-mode fiber-optic communication. The results support general continuing efforts in the optical fiber communications industry to improve coupling links within such systems with emphasis on manufacturing simplicity, system packaging flexibility, relaxation of assembly alignment tolerances, cost reduction of opto-electronic components and long term reliability and stability.

Determination of small field synthetic single-crystal diamond detector correction factors for CyberKnife, Leksell Gamma Knife Perfexion and linear accelerator.

PubMed

Veselsky, T; Novotny, J; Pastykova, V; Koniarova, I

2017-12-01

The aim of this study was to determine small field correction factors for a synthetic single-crystal diamond detector (PTW microDiamond) for routine use in clinical dosimetric measurements. Correction factors following small field Alfonso formalism were calculated by comparison of PTW microDiamond measured ratio M Qclin fclin /M Qmsr fmsr with Monte Carlo (MC) based field output factors Ω Qclin,Qmsr fclin,fmsr determined using Dosimetry Diode E or with MC simulation itself. Diode measurements were used for the CyberKnife and Varian Clinac 2100C/D linear accelerator. PTW microDiamond correction factors for Leksell Gamma Knife (LGK) were derived using MC simulated reference values from the manufacturer. PTW microDiamond correction factors for CyberKnife field sizes 25-5 mm were mostly smaller than 1% (except for 2.9% for 5 mm Iris field and 1.4% for 7.5 mm fixed cone field). The correction of 0.1% and 2.0% for 8 mm and 4 mm collimators, respectively, needed to be applied to PTW microDiamond measurements for LGK Perfexion. Finally, PTW microDiamond M Qclin fclin /M Qmsr fmsr for the linear accelerator varied from MC corrected Dosimetry Diode data by less than 0.5% (except for 1 × 1 cm 2 field size with 1.3% deviation). Regarding low resulting correction factor values, the PTW microDiamond detector may be considered an almost ideal tool for relative small field dosimetry in a large variety of stereotactic and radiosurgery treatment devices. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Growth of Nanosized Single Crystals for Efficient Perovskite Light-Emitting Diodes.

PubMed

Lee, Seungjin; Park, Jong Hyun; Nam, Yun Seok; Lee, Bo Ram; Zhao, Baodan; Di Nuzzo, Daniele; Jung, Eui Dae; Jeon, Hansol; Kim, Ju-Young; Jeong, Hu Young; Friend, Richard H; Song, Myoung Hoon

2018-04-24

Organic-inorganic hybrid perovskites are emerging as promising emitting materials due to their narrow full-width at half-maximum emissions, color tunability, and high photoluminescence quantum yields (PLQYs). However, the thermal generation of free charges at room temperature results in a low radiative recombination rate and an excitation-intensity-dependent PLQY, which is associated with the trap density. Here, we report perovskite films composed of uniform nanosized single crystals (average diameter = 31.7 nm) produced by introducing bulky amine ligands and performing the growth at a lower temperature. By effectively controlling the crystal growth, we maximized the radiative bimolecular recombination yield by reducing the trap density and spatially confining the charges. Finally, highly bright and efficient green emissive perovskite light-emitting diodes that do not suffer from electroluminescence blinking were achieved with a luminance of up to 55 400 cd m -2 , current efficiency of 55.2 cd A -1 , and external quantum efficiency of 12.1%.

InGaAs/InAlAs single photon avalanche diode for 1550 nm photons.

PubMed

Meng, Xiao; Xie, Shiyu; Zhou, Xinxin; Calandri, Niccolò; Sanzaro, Mirko; Tosi, Alberto; Tan, Chee Hing; Ng, Jo Shien

2016-03-01

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K(-1). Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10(8) Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

PubMed Central

Xie, Shiyu; Zhou, Xinxin; Calandri, Niccolò; Sanzaro, Mirko; Tosi, Alberto; Tan, Chee Hing; Ng, Jo Shien

2016-01-01

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 108 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured. PMID:27069647

Aluminium surface treatment with ceramic phases using diode laser

NASA Astrophysics Data System (ADS)

Labisz, K.; Tański, T.; Brytan, Z.; Pakieła, W.; Wiśniowski, M.

2016-07-01

Ceramic particles powder feeding into surface layer of engineering metal alloy is a well-known and widely used technique. New approach into the topic is to obtain finely distributed nano-sized particles involved in the aluminium matrix using the traditional laser technology. In this paper are presented results of microstructure investigation of cast aluminium-silicon-copper alloys surface layer after heat treatment and alloying with ceramic carbides of WC and ZrO2 using high-power diode laser. The surface layer was specially prepared for the reason of reducing the reflectivity, which is the main problem in the up-to-date metal matrix composites production. With scanning electron microscopy, it was possible to determine the deformation process and distribution of WC and ZrO2 ceramic powder phase. Structure of the surface after laser treatment changes, revealing three zones—remelting zone, heat-affected zone and transition zone placed over the Al substrate. The structural changes of ceramic powder, its distribution and morphology as well as microstructure of the matrix material influence on functional properties, especially wear resistance and hardness of the achieved layer, were investigated.

Developing a compact multiple laser diode combiner with a single fiber stub output for handheld IoT devices

NASA Astrophysics Data System (ADS)

Lee, Minseok; June, Seunghyeok; Kim, Sehwan

2018-01-01

Many biomedical applications require an efficient combination and localization of multiple discrete light sources ( e.g., fluorescence and absorbance imaging). We present a compact 6 channel combiner that couples the output of independent solid-state light sources into a single 400-μm-diameter fiber stub for handheld Internet of Things (IoT) devices. We demonstrate average coupling efficiencies > 80% for each of the 6 laser diodes installed into the prototype. The design supports the use of continuous wave and intensity-modulated laser diodes. This fiber-stub-type beam combiner could be used to construct custom multi-wavelength sources for tissue oximeters, microscopes and molecular imaging technologies. In order to validate its suitability, we applied the developed fiber-stub-type beam combiner to a multi-wavelength light source for a handheld IoT device and demonstrated its feasibility for smart healthcare through a tumor-mimicking silicon phantom.

Coherent communication link using diode-pumped lasers

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Wallace, Richard W.

1989-01-01

Work toward developing a diffraction limited, single frequency, modulated transmitter suitable for coherent optical communication or direct detection communication is discussed. Diode pumped, monolithic Nd:YAG nonplanar ring oscillators were used as the carrier beam. An external modulation technique which can handle high optical powers, has moderate modulation voltage, and which can reach modulation rates of 1 GHz was invented. Semiconductor laser pumped solid-state lasers which have high output power (0.5 Watt) and which oscillate at a single frequency, in a diffraction limited beam, at the wavelength of 1.06 microns were built. A technique for phase modulating the laser output by 180 degrees with a 40-volt peak to peak driving voltage is demonstrated. This technique can be adapted for amplitude modulation of 100 percent with the same voltage. This technique makes use of a resonant bulk modulator, so it does not have the power handling limitations of guided wave modulators.

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

NASA Astrophysics Data System (ADS)

Neugebauer, S.; Hoffmann, M. P.; Witte, H.; Bläsing, J.; Dadgar, A.; Strittmatter, A.; Niermann, T.; Narodovitch, M.; Lehmann, M.

2017-03-01

We report on III-Nitride blue light emitting diodes (LEDs) comprising a GaN-based tunnel junction (TJ) all realized by metalorganic vapor phase epitaxy in a single growth process. The TJ grown atop the LED structures consists of a Mg-doped GaN layer and subsequently grown highly Ge-doped GaN. Long thermal annealing of 60 min at 800 °C is important to reduce the series resistance of the LEDs due to blockage of acceptor-passivating hydrogen diffusion through the n-type doped top layer. Secondary ion mass spectroscopy measurements reveal Mg-incorporation into the topmost GaN:Ge layer, implying a non-abrupt p-n tunnel junction and increased depletion width. Still, significantly improved lateral current spreading as compared to conventional semi-transparent Ni/Au p-contact metallization and consequently a more homogeneous electroluminescence distribution across 1 × 1 mm2 LED structures is achieved. Direct estimation of the depletion width is obtained from electron holography experiments, which allows for a discussion of the possible tunneling mechanism.

Improved battery charger for electric vehicles

NASA Technical Reports Server (NTRS)

Rippel, W. E.

1981-01-01

Polyphase version of single-phase "boost chopper" significantly reduces ripple and electromagnetic interference (EMI). Drive circuit of n-phase boost chopper incorporates n-phase duty-cycle generator; inductor, transistor, and diode compose chopper which can run on single-phase or three-phase alternating current or on direct current. Device retains compactness and power factors approaching unity, while improving efficiency.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

PubMed

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Device for limiting single phase ground fault of mining machines

NASA Astrophysics Data System (ADS)

Fediuk, R. S.; Stoyushko, N. Yu; Yevdokimova, Yu G.; Smoliakov, A. K.; Batarshin, V. O.; Timokhin, R. A.

2017-10-01

The paper shows the reasons and consequences of the single-phase ground fault. With all the variety of devices for limiting the current single-phase ground fault, it was found that the most effective are Peterson coils having different switching circuits. Measuring of the capacity of the network is of great importance in this case, a number of options capacitance measurement are presented. A closer look is taken at the device for limiting the current of single-phase short circuit, developed in the Far Eastern Federal University under the direction of Dr. G.E. Kuvshinov. The calculation of single-phase short-circuit currents in the electrical network, without compensation and with compensation of capacitive current is carried out. Simulation of a single-phase circuit in a network with the proposed device is conducted.

Switchable diode effect in oxygen vacancy-modulated SrTiO3 single crystal

NASA Astrophysics Data System (ADS)

Pan, Xinqiang; Shuai, Yao; Wu, Chuangui; Luo, Wenbo; Sun, Xiangyu; Zeng, Huizhong; Bai, Xiaoyuan; Gong, Chaoguan; Jian, Ke; Zhang, Lu; Guo, Hongliang; Tian, Benlang; Zhang, Wanli

2017-09-01

SrTiO3 (STO) single crystal wafer was annealed in vacuum, and co-planar metal-insulator-metal structure of Pt/Ti/STO/Ti/Pt were formed by sputtering Pt/Ti electrodes onto the surface of STO after annealing. The forming-free resistive switching behavior with self-compliance property was observed in the sample. The sample showed switchable diode effect, which is explained by a simple model that redistribution of oxygen vacancies (OVs) under the external electric field results in the formation of n-n+ junction or n+-n junction (n donated n-type semiconductor; n+ donated heavily doped n-type semiconductor). The self-compliance property is also interpreted by the formation of n-n+/n+-n junction caused by the migration of the OVs under the electric field.

Single-shot quantitative phase microscopy with color-multiplexed differential phase contrast (cDPC)

PubMed Central

2017-01-01

We present a new technique for quantitative phase and amplitude microscopy from a single color image with coded illumination. Our system consists of a commercial brightfield microscope with one hardware modification—an inexpensive 3D printed condenser insert. The method, color-multiplexed Differential Phase Contrast (cDPC), is a single-shot variant of Differential Phase Contrast (DPC), which recovers the phase of a sample from images with asymmetric illumination. We employ partially coherent illumination to achieve resolution corresponding to 2× the objective NA. Quantitative phase can then be used to synthesize DIC and phase contrast images or extract shape and density. We demonstrate amplitude and phase recovery at camera-limited frame rates (50 fps) for various in vitro cell samples and c. elegans in a micro-fluidic channel. PMID:28152023

Single-shot quantitative phase microscopy with color-multiplexed differential phase contrast (cDPC).

PubMed

Phillips, Zachary F; Chen, Michael; Waller, Laura

2017-01-01

We present a new technique for quantitative phase and amplitude microscopy from a single color image with coded illumination. Our system consists of a commercial brightfield microscope with one hardware modification-an inexpensive 3D printed condenser insert. The method, color-multiplexed Differential Phase Contrast (cDPC), is a single-shot variant of Differential Phase Contrast (DPC), which recovers the phase of a sample from images with asymmetric illumination. We employ partially coherent illumination to achieve resolution corresponding to 2× the objective NA. Quantitative phase can then be used to synthesize DIC and phase contrast images or extract shape and density. We demonstrate amplitude and phase recovery at camera-limited frame rates (50 fps) for various in vitro cell samples and c. elegans in a micro-fluidic channel.

Linearly Polarized Single-Frequency Oscillations of Laser-Diode-Pumped Microchip Ceramic Nd:YAG Lasers with Forced Ince-Gaussian Mode Operations

NASA Astrophysics Data System (ADS)

Otsuka, Kenju; Nemoto, Kana; Kamikariya, Koji; Miyasaka, Yoshihiko; Chu, Shu-Chun

2007-09-01

Detailed oscillation spectra and polarization properties have been examined in laser-diode-pumped (LD-pumped) microchip ceramic (i.e., polycrystalline) Nd:YAG lasers and the inherent segregation of lasing patterns into local modes possessing different polarization states was observed. Single-frequency linearly-polarized stable oscillations were realized by forcing the laser to Ince-Gaussian mode operations by adjusting azimuthal cavity symmetry.

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

NASA Astrophysics Data System (ADS)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-08-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPPlat) at high power. An experimental study of the factors limiting BPPlat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPPlat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPPlat, whose influence on total BPPlat remains small, provided the overall polarization purity is >95%.

Chaos crisis and bistability of self-pulsing dynamics in a laser diode with phase-conjugate feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Virte, Martin; Karsaklian Dal Bosco, Andreas; Wolfersberger, Delphine

2011-10-15

A laser diode subject to a phase-conjugate optical feedback can exhibit rich nonlinear dynamics and chaos. We report here on two bifurcation mechanisms that appear when increasing the amount of light being fed back to the laser. First, we report on a full suppression of chaos from a crisis induced by a saddle-node bifurcation on self-pulsing, so-called external-cavity-mode solutions (ECMs). Second, the feedback-dependent torus and saddle-node bifurcations on ECMs may be responsible for large regions of bistability between ECMs of different and high (beyond gigahertz) frequencies.

Holographic injection locking of a broad area laser diode via a photorefractive thin-film device.

PubMed

van Voorst, P D; de Wit, M R; Offerhaus, H L; Tay, S; Thomas, J; Peyghambarian, N; Boller, K-J

2007-12-24

We demonstrate locking of a high power broad area laser diode to a single frequency using holographic feedback from a photorefractive polymer thin-film device for the first time. A four-wave mixing setup is used to generate feedback for the broad area diode at the wavelength of the single frequency source (Ti:Sapphire laser) while the spatial distribution adapts to the preferred profile of the broad area diode. The result is an injection-locked broad area diode emitting with a linewidth comparable to the Ti:Sapphire laser.

Performance of Four-Leg VSC based DSTATCOM using Single Phase P-Q Theory

NASA Astrophysics Data System (ADS)

Jampana, Bangarraju; Veramalla, Rajagopal; Askani, Jayalaxmi

2017-02-01

This paper presents single-phase P-Q theory for four-leg VSC based distributed static compensator (DSTATCOM) in the distribution system. The proposed DSTATCOM maintains unity power factor at source, zero voltage regulation, eliminates current harmonics, load balancing and neutral current compensation. The advantage of using four-leg VSC based DSTATCOM is to eliminate isolated/non-isolated transformer connection at point of common coupling (PCC) for neutral current compensation. The elimination of transformer connection at PCC with proposed topology will reduce cost of DSTATCOM. The single-phase P-Q theory control algorithm is used to extract fundamental component of active and reactive currents for generation of reference source currents which is based on indirect current control method. The proposed DSTATCOM is modelled and the results are validated with various consumer loads under unity power factor and zero voltage regulation modes in the MATLAB R2013a environment using simpower system toolbox.

Design and construction of a novel 1H/19F double-tuned coil system using PIN-diode switches at 9.4T.

PubMed

Choi, Chang-Hoon; Hong, Suk-Min; Ha, YongHyun; Shah, N Jon

2017-06-01

A double-tuned 1 H/ 19 F coil using PIN-diode switches was developed and its performance evaluated. The is a key difference from the previous developments being that this design used a PIN-diode switch in series with an additionally inserted inductor in parallel to one of the capacitors on the loop. The probe was adjusted to 19 F when the reverse bias voltage was applied (PIN-diode OFF), whilst it was switched to 1 H when forward current was flowing (PIN-diode ON). S-parameters and Q-factors of single- and double-tuned coils were examined and compared with/without a phantom on the bench. Imaging experiments were carried out on a 9.4T preclinical scanner. All coils were tuned at resonance frequencies and matched well. It is shown that the Q-ratio and SNR of double-tuned coil at 19 F frequency are nearly as good as those of a single-tuned coil. Since the operating frequency was tuned to 19 F when the PIN-diodes were turned off, losses due to PIN-diodes were substantially lower resulting in the provision of excellent image quality of X-nuclei. Copyright © 2017 Elsevier Inc. All rights reserved.

Electric field distribution and current emission in a miniaturized geometrical diode

NASA Astrophysics Data System (ADS)

Lin, Jinpu; Wong, Patrick Y.; Yang, Penglu; Lau, Y. Y.; Tang, W.; Zhang, Peng

2017-06-01

We study the electric field distribution and current emission in a miniaturized geometrical diode. Using Schwarz-Christoffel transformation, we calculate exactly the electric field inside a finite vacuum cathode-anode (A-K) gap with a single trapezoid protrusion on one of the electrode surfaces. It is found that there is a strong field enhancement on both electrodes near the protrusion, when the ratio of the A-K gap distance to the protrusion height d /h <2. The calculations are spot checked against COMSOL simulations. We calculate the effective field enhancement factor for the field emission current, by integrating the local Fowler-Nordheim current density along the electrode surfaces. We systematically examine the electric field enhancement and the current rectification of the miniaturized geometrical diode for various geometric dimensions and applied electric fields.

White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

PubMed

Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

2016-03-09

In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

Stacked, Filtered Multi-Channel X-Ray Diode Array

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacNeil, Lawrence P.; Dutra, Eric C.; Raphaelian, Mark

2015-08-01

This system meets the need for a low-cost, robust X-ray diode array to use for experiments in hostile environments on multiple platforms, and for experiments utilizing forces that may destroy the diode(s). Since these uses require a small size with a minimal single line-of-sight, a parallel array often cannot be used. So a stacked, filtered multi-channel X-ray diode array was developed that was called the MiniXRD. The design was modeled, built, and tested at National Security Technologies, LLC (NSTec) Livermore Operations (LO) to determine fundamental characteristics. Then, several different systems were fielded as ancillary “ridealong” diagnostics at several national facilitiesmore » to allow us to iteratively improve the design and usability. Presented here are design considerations and experimental results. This filtered diode array is currently at Technical Readiness Level (TRL) 6.« less

Polymer Light-Emitting Diode (PLED) Process Development

DTIC Science & Technology

2003-12-01

conclusions and recommendations for Phase II of the Flexible Display Program. 15. SUBJECT TERMS LIGHT EMITTING DIODES LIQUID CRYSTAL DISPLAY SYSTEMS...space for Phase I and II confined by backplane complexity and substrate form...12 Figure 6. Semi automated I-V curve measurement setup consisting of Keithley power supply, computer and

Tribotronic Tuning Diode for Active Analog Signal Modulation.

PubMed

Zhou, Tao; Yang, Zhi Wei; Pang, Yaokun; Xu, Liang; Zhang, Chi; Wang, Zhong Lin

2017-01-24

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Characteristic of laser diode beam propagation through a collimating lens.

PubMed

Xu, Qiang; Han, Yiping; Cui, Zhiwei

2010-01-20

A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

PubMed

Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

2016-06-01

The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P < 0.05). Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Monte Carlo study of si diode response in electron beams.

PubMed

Wang, Lilie L W; Rogers, David W O

2007-05-01

Silicon semiconductor diodes measure almost the same depth-dose distributions in both photon and electron beams as those measured by ion chambers. A recent study in ion chamber dosimetry has suggested that the wall correction factor for a parallel-plate ion chamber in electron beams changes with depth by as much as 6%. To investigate diode detector response with respect to depth, a silicon diode model is constructed and the water/silicon dose ratio at various depths in electron beams is calculated using EGSnrc. The results indicate that, for this particular diode model, the diode response per unit water dose (or water/diode dose ratio) in both 6 and 18 MeV electron beams is flat within 2% versus depth, from near the phantom surface to the depth of R50 (with calculation uncertainty <0.3%). This suggests that there must be some other correction factors for ion chambers that counter-balance the large wall correction factor at depth in electron beams. In addition, the beam quality and field-size dependence of the diode model are also calculated. The results show that the water/diode dose ratio remains constant within 2% over the electron energy range from 6 to 18 MeV. The water/diode dose ratio does not depend on field size as long as the incident electron beam is broad and the electron energy is high. However, for a very small beam size (1 X 1 cm(2)) and low electron energy (6 MeV), the water/diode dose ratio may decrease by more than 2% compared to that of a broad beam.

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Shock isolator for diode laser operation on a closed-cycle refrigerator

NASA Technical Reports Server (NTRS)

Jennings, D. E.; Hillman, J. J.

1977-01-01

Closed-cycle helium refrigerators are widely used as coolers for semiconductor diode lasers. These refrigerators pose several difficulties including temperature oscillations due to varying refrigerator capacity during the Solvay cycle, and impact shocks delivered to the diode in the cycle's expansion phase. A shock isolator has been designed to isolate diode lasers from such impact shocks. Slow diode current scans have been made before installation of the shock isolator, with the isolator but no thermal damper, and with both devices. With the isolator and no damper, the diode output frequency oscillated at the refrigerator cycle rate, deviating by plus or minus 40 MHz. Using the isolator and the damper no frequency fluctuation was detected.

Single-frequency operation of diode-pumped 2 microm Q-switched Tm:YAG laser injection seeded by monolithic nonplanar ring laser.

PubMed

Gao, Chunqing; Lin, Zhifeng; Gao, Mingwei; Zhang, Yunshan; Zhu, Lingni; Wang, Ran; Zheng, Yan

2010-05-20

We present a diode-pumped, 2mum single-frequency Q-switched Tm:YAG laser. The Q-switched laser is injection seeded by a monolithic Tm:YAG nonplanar ring oscillator with the ramp-hold-fire technique. The output energy of the 2mum single-frequency Q-switched pulse is 2.23mJ, with a pulse width of 290ns and a repetition rate of 200Hz. From the heterodyne beating measurement, the frequency difference between the seed laser and the Q-switched laser is determined to be 37.66MHz, with a half-width of the symmetric spectrum of about 2 MHz.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE PAGES

Liu, Bo; Braiman, Yehuda

2018-02-06

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

NASA Astrophysics Data System (ADS)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bo; Braiman, Yehuda

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Four channel Laser Firing Unit using laser diodes

NASA Technical Reports Server (NTRS)

Rosner, David, Sr.; Spomer, Edwin, Sr.

1994-01-01

This paper describes the accomplishments and status of PS/EDD's (Pacific Scientific/Energy Dynamics Division) internal research and development effort to prototype and demonstrate a practical four channel laser firing unit (LFU) that uses laser diodes to initiate pyrotechnic events. The LFU individually initiates four ordnance devices using the energy from four diode lasers carried over the fiber optics. The LFU demonstrates end-to-end optical built in test (BIT) capabilities. Both Single Fiber Reflective BIT and Dual Fiber Reflective BIT approaches are discussed and reflection loss data is presented. This paper includes detailed discussions of the advantages and disadvantages of both BIT approaches, all-fire and no-fire levels, and BIT detection levels. The following topics are also addressed: electronic control and BIT circuits, fiber optic sizing and distribution, and an electromechanical shutter type safe/arm device. This paper shows the viability of laser diode initiation systems and single fiber BIT for typing military applications.

The role of amplitude-to-phase conversion in the generation of oscillator flicker phase noise

NASA Technical Reports Server (NTRS)

Hearn, C. P.

1985-01-01

The role of amplitude-to-phase conversion as a factor in feedback oscillator flicker phase noise is examined. A limiting stage consisting of parallel-connected opposite polarity diodes operating in a circuit environment contining reactance is shown to exhibit amplitude-to-phase conversion. This mechanism coupled with resistive upconversion provides an indirect route for very low frequency flicker noise to be transferred into the phase of an oscillator signal. It is concluded that this effect is more significant in the lower frequency regimes where the onlinear reactances associated with active devices are overwhelmed by linear reactive elements.

Electrooptic modulation methods for high sensitivity tunable diode laser spectroscopy

NASA Technical Reports Server (NTRS)

Glenar, David A.; Jennings, Donald E.; Nadler, Shacher

1990-01-01

A CdTe phase modulator and low power RF sources have been used with Pb-salt tunable diode lasers operating near 8 microns to generate optical sidebands for high sensitivity absorption spectroscopy. Sweep averaged, first-derivative sample spectra of CH4 were acquired by wideband phase sensitive detection of the electrooptically (EO) generated carrier-sideband beat signal. EO generated beat signals were also used to frequency lock the TDL to spectral lines. This eliminates low frequency diode jitter, and avoids the excess laser linewidth broadening that accompanies TDL current modulation frequency locking methods.

Disruptive laser diode source for embedded LIDAR sensors

NASA Astrophysics Data System (ADS)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

High average power diode pumped solid state laser

NASA Astrophysics Data System (ADS)

Gao, Yue; Wang, Yanjie; Chan, Amy; Dawson, Murray; Greene, Ben

2017-03-01

A new generation of high average power pulsed multi-joule solid state laser system has been developed at EOS Space Systems for various space related tracking applications. It is a completely diode pumped, fully automated multi-stage system consisting of a pulsed single longitudinal mode oscillator, three stages of pre-amplifiers, two stages of power amplifiers, completely sealed phase conjugate mirror or stimulated Brillouin scattering (SBS) cell and imaging relay optics with spatial filters in vacuum cells. It is capable of generating pulse energy up to 4.7 J, a beam quality M 2 ~ 3, pulse width between 10-20 ns, and a pulse repetition rate between 100-200 Hz. The system has been in service for more than two years with excellent performance and reliability.

High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications

NASA Astrophysics Data System (ADS)

Van de Casteele, J.; Bettiati, M.; Laruelle, F.; Cargemel, V.; Pagnod-Rossiaux, P.; Garabedian, P.; Raymond, L.; Laffitte, D.; Fromy, S.; Chambonnet, D.; Hirtz, J. P.

2008-02-01

We demonstrate very high reliability level on 980-1060nm high-power single-mode lasers through multi-cell tests. First, we show how our chip design and technology enables high reliability levels. Then, we aged 758 devices during 9500 hours among 6 cells with high current (0.8A-1.2A) and high submount temperature (65°C-105°C) for the reliability demonstration. Sudden catastrophic failure is the main degradation mechanism observed. A statistical failure rate model gives an Arrhenius thermal activation energy of 0.51eV and a power law forward current acceleration factor of 5.9. For high-power submarine applications (360mW pump module output optical power), this model exhibits a failure rate as low as 9 FIT at 13°C, while ultra-high power terrestrial modules (600mW) lie below 220 FIT at 25°C. Wear-out phenomena is observed only for very high current level without any reliability impact under 1.1A. For the 1060nm chip, step-stress tests were performed and a set of devices were aged during more than 2000 hours in different stress conditions. First results are in accordance with 980nm product with more than 100khours estimated MTTF. These reliability and performance features of 980-1060nm laser diodes will make high-power single-mode emitters the best choice for a number of telecommunication and industrial applications in the next few years.

Low-Loss Coupler For Microwave Laser-Diode Modulation

NASA Technical Reports Server (NTRS)

Toda, Minoru

1991-01-01

Elimination of series resistor reduces loss of radio-frequency power. Quarter-wavelength matching section connected to transmission line eliminates need for resistor near laser diode and extends frequency response of system. Concept significantly extends relatively flat frequency response of laser diode or similar component, while simplifying design of its package, increasing amplitude of output signal, and reducing dissipation of heat by eliminating resistance. Phase characteristics approximately linear and any digital information transmitted not significantly altered.

Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2017-02-01

High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.

Innovative Facet Passivation for High-Brightness Laser Diodes

DTIC Science & Technology

2016-02-05

and anti-reflection (AR) coatings are deposited after cleaving. Edge- emitting laser diodes emit very high optical powers from small emission areas, as...SECURITY CLASSIFICATION OF: The objective of this effort is to increase the power of low fill-factor (20%) laser diode (LD) bars from the present...2012 16-Nov-2015 Approved for Public Release; Distribution Unlimited Final Report: Innovative Facet Passivation for High-Brightness Laser Diodes The

One joule per Q-switched pulse diode-pumped laser

NASA Technical Reports Server (NTRS)

Holder, Lonnie E.; Kennedy, Chandler; Long, Larry; Dube, George

1992-01-01

Q-switched 1-J output has been achieved from diode-pumped zig-zag Nd:YAG slabs in an oscillator-amplifier configuration. The oscillator was single transverse and longitudinal model. This laser set records for Q-switched energy per pulse, and for average power from a diode-pumped laser. The laser was constructed in a rugged configuration suitable for routine laboratory use.

Linear phase encoding for holographic data storage with a single phase-only spatial light modulator.

PubMed

Nobukawa, Teruyoshi; Nomura, Takanori

2016-04-01

A linear phase encoding is presented for realizing a compact and simple holographic data storage system with a single spatial light modulator (SLM). This encoding method makes it possible to modulate a complex amplitude distribution with a single phase-only SLM in a holographic storage system. In addition, an undesired light due to the imperfection of an SLM can be removed by spatial frequency filtering with a Nyquist aperture. The linear phase encoding is introduced to coaxial holographic data storage. The generation of a signal beam using linear phase encoding is experimentally verified in an interferometer. In a coaxial holographic data storage system, single data recording, shift selectivity, and shift multiplexed recording are experimentally demonstrated.

An ultra low noise telecom wavelength free running single photon detector using negative feedback avalanche diode.

PubMed

Yan, Zhizhong; Hamel, Deny R; Heinrichs, Aimee K; Jiang, Xudong; Itzler, Mark A; Jennewein, Thomas

2012-07-01

It is challenging to implement genuine free running single-photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for the signals from a negative feedback avalanche diode (NFAD) [M. A. Itzler, X. Jiang, B. Nyman, and K. Slomkowski, "Quantum sensing and nanophotonic devices VI," Proc. SPIE 7222, 72221K (2009); X. Jiang, M. A. Itzler, K. ODonnell, M. Entwistle, and K. Slomkowski, "Advanced photon counting techniques V," Proc. SPIE 8033, 80330K (2011); M. A. Itzler, X. Jiang, B. M. Onat, and K. Slomkowski, "Quantum sensing and nanophotonic devices VII," Proc. SPIE 7608, 760829 (2010)], which allows useful operation of these devices at a temperature of 193 K and results in very low darkcounts (∼100 counts per second (CPS)), good time jitter (∼30 ps), and good DE (∼10%). We characterized two NFADs with a time-correlation method using photons generated from weak coherent pulses and photon pairs produced by spontaneous parametric down conversion. The inferred detector efficiencies for both types of photon sources agree with each other. The best noise equivalent power of the device is estimated to be 8.1 × 10(-18) W Hz(-1/2), more than 10 times better than typical InP/InGaAs single photon avalanche diodes (SPADs) show in free running mode. The afterpulsing probability was found to be less than 0.1% per ns at the optimized operating point. In addition, we studied the performance of an entanglement-based quantum key distribution (QKD) using these detectors and develop a model for the quantum bit error rate that incorporates the afterpulsing coefficients. We verified experimentally that using these NFADs it is feasible to implement QKD over 400 km of telecom fiber. Our NFAD photon detector system is very simple, and is well suited for single-photon applications where ultra-low noise and free-running operation is required, and some afterpulsing

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2011 CFR

2011-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Connection of single-phase loads. 77.905 Section 77.905 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE...

30 CFR 77.905 - Connection of single-phase loads.

Code of Federal Regulations, 2010 CFR

2010-07-01

... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.905 Connection of single-phase... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Connection of single-phase loads. 77.905 Section 77.905 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE...

Resonantly diode laser pumped 1.6-μm Er:YAG laser

NASA Astrophysics Data System (ADS)

Garbuzov, Dmitri; Kudryashov, Igor; Dubinskii, Mark

2005-06-01

We report what is believed to be the first demonstration of direct resonant diode pumping of a 1.6-mm Er3+-doped bulk solid-state laser (DPSSL). The most of the results is obtained with pumping Er:YAG by the single mode diode laser packaged in fibered modules. The fibered modules, emitting at 1470 nm and 1530 nm wavelength with and without fiber grating (FBG) stabilization, have been used in pumping experiments. The very first results on high power DPSSL operation achieved with diode array pumping also will be presented. The highest absorbed photon conversion efficiency of 26% has been obtained for Er:YAG DPSSL using the 1470-nm single-mode module. Analysis of the DPSSL input-output characteristics suggests that the obtained slope efficiency can be increased at least up to 40% through the reduction of intracavity losses and pumping efficiency improvement. Diode pumped SSL (DPSSL) operates at a wavelength of 1617 nm and 1645 nm.

Rectified diode response of a multimode quantum cascade laser integrated terahertz transceiver.

PubMed

Dyer, Gregory C; Norquist, Christopher D; Cich, Michael J; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

2013-02-25

We characterized the DC transport response of a diode embedded in a THz quantum cascade laser as the laser current was changed. The overall response is described by parallel contributions from the rectification of the laser field due to the non-linearity of the diode I-V and from thermally activated transport. Sudden jumps in the diode response when the laser changes from single mode to multi-mode operation, with no corresponding jumps in output power, suggest that the coupling between the diode and laser field depends on the spatial distribution of internal fields. The results demonstrate conclusively that the internal laser field couples directly to the integrated diode.

Single-Photon-Triggered Quantum Phase Transition

NASA Astrophysics Data System (ADS)

Lü, Xin-You; Zheng, Li-Li; Zhu, Gui-Lei; Wu, Ying

2018-06-01

We propose a hybrid quantum model combining cavity QED and optomechanics, which allows the occurrence of an equilibrium superradiant quantum phase transition (QPT) triggered by a single photon. This single-photon-triggered QPT exists in the cases of both ignoring and including the so-called A2 term; i.e., it is immune to the no-go theorem. It originally comes from the photon-dependent quantum criticality featured by the proposed hybrid quantum model. Moreover, a reversed superradiant QPT is induced by the competition between the introduced A2 term and the optomechanical interaction. This work offers an approach to manipulate QPT with a single photon, which should inspire the exploration of single-photon quantum-criticality physics and the engineering of new single-photon quantum devices.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry.

PubMed

Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V

2014-10-01

Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm

Plasma-filled applied B ion diode experiments using a plasma opening switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Renk, T.J.

1994-12-15

In order for a plasma opening switch (POS) to open quickly and transfer power efficiently from an inductively charged vacuum transmission line to an applied B ion diode, the load impedance of the ion diode may be required to have an initial low impedance phase. A plasma-filled diode has such an impedance history. To test the effect of a plasma-filled diode on POS-diode coupling, a drifting plasma was introduced from the cathode side of an applied B ion diode operated on the LION accelerator (1.5 MV, 4 [Omega], 40 ns) at Cornell University. This plasma readily crossed the 2.1 Tmore » magnetic insulation field of the diode, and resulted in both increased diode electrical power, and an increased ability of the ion beam to remove material from a target. The plasma did not appear to have a noticeable effect on local beam steering angle.« less

High-Fluence Light-Emitting Diode-Generated Red Light Modulates the Transforming Growth Factor-Beta Pathway in Human Skin Fibroblasts.

PubMed

Mamalis, Andrew; Jagdeo, Jared

2018-05-24

Skin fibrosis is a significant medical problem with limited available treatment modalities. The key cellular characteristics include increased fibroblast proliferation, collagen production, and transforming growth factor-beta (TGF-B)/SMAD pathway signaling. The authors have previously shown that high-fluence light-emitting diode red light (HF-LED-RL) decreases cellular proliferation and collagen production. Herein, the authors investigate the ability of HF-LED-RL to modulate the TGF-B/SMAD pathway. Normal human dermal fibroblasts were cultured and irradiated with a commercially available hand-held LED array. After irradiation, cell lysates were collected and levels of pSMAD2, TGF-Beta 1, and TGF-Beta I receptor were measured using Western blot. High-fluence light-emitting diode red light decreased TGF-Beta 1 ligand (TGF-B1) levels after irradiation. 320 J/cm HF-LED-RL resulted in 59% TGF-B1 and 640 J/cm HF-LED-RL resulted in 54% TGF-B1, relative to controls. 640 J/cm HF-LED-RL resulted in 62% pSMAD2 0 hours after irradiation, 65% pSMAD2 2 hours after irradiation, and 95% 4 hours after irradiation, compared with matched controls. High-fluence light-emitting diode red light resulted in no significant difference in transforming growth factor-beta receptor I levels compared with matched controls. Skin fibrosis is a significant medical problem with limited available treatment modalities. Light-emitting diode-generated red light is a safe, economic, and noninvasive modality that has a body of in vitro evidence supporting the reduction of key cellular characteristics associated with skin fibrosis.

Respiratory complications after diode-laser-assisted tonsillotomy.

PubMed

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p < 0.01, 95 % CI 1.4780-16.9152) or who suffered from relevant comorbidities (OR = 4.84, p < 0.01, 95 % CI 1.5202-15.4091). Moreover, a diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p < 0.01, 95 % CI 1.3924-8.5602). Postoperative respiratory complications should not be underestimated in children with sleep-disordered breathing (SDB). Therefore, children with SDB, children with comorbidities or children younger than 3 years should be considered "at risk" and children with confirmed moderate to severe OSAS should be referred to a PICU following diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

An analysis of the ArcCHECK-MR diode array's performance for ViewRay quality assurance.

PubMed

Ellefson, Steven T; Culberson, Wesley S; Bednarz, Bryan P; DeWerd, Larry A; Bayouth, John E

2017-07-01

The ArcCHECK-MR diode array utilizes a correction system with a virtual inclinometer to correct the angular response dependencies of the diodes. However, this correction system cannot be applied to measurements on the ViewRay MR-IGRT system due to the virtual inclinometer's incompatibility with the ViewRay's multiple simultaneous beams. Additionally, the ArcCHECK's current correction factors were determined without magnetic field effects taken into account. In the course of performing ViewRay IMRT quality assurance with the ArcCHECK, measurements were observed to be consistently higher than the ViewRay TPS predictions. The goals of this study were to quantify the observed discrepancies and test whether applying the current factors improves the ArcCHECK's accuracy for measurements on the ViewRay. Gamma and frequency analysis were performed on 19 ViewRay patient plans. Ion chamber measurements were performed at a subset of diode locations using a PMMA phantom with the same dimensions as the ArcCHECK. A new method for applying directionally dependent factors utilizing beam information from the ViewRay TPS was developed in order to analyze the current ArcCHECK correction factors. To test the current factors, nine ViewRay plans were altered to be delivered with only a single simultaneous beam and were measured with the ArcCHECK. The current correction factors were applied using both the new and current methods. The new method was also used to apply corrections to the original 19 ViewRay plans. It was found the ArcCHECK systematically reports doses higher than those actually delivered by the ViewRay. Application of the current correction factors by either method did not consistently improve measurement accuracy. As dose deposition and diode response have both been shown to change under the influence of a magnetic field, it can be concluded the current ArcCHECK correction factors are invalid and/or inadequate to correct measurements on the ViewRay system. © 2017 The

Nitride-based stacked laser diodes with a tunnel junction

NASA Astrophysics Data System (ADS)

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu; Takagi, Yasufumi; Maeda, Junya; Yoshida, Harumasa

2018-01-01

We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

PubMed Central

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO. PMID:25232299

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

PubMed

Du, Chia-Fong; Lee, Chen-Hui; Cheng, Chao-Tsung; Lin, Kai-Hsiang; Sheu, Jin-Kong; Hsu, Hsu-Cheng

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

Influence of high power 405 nm multi-mode and single-mode diode laser light on the long-term stability of fused silica fibers

NASA Astrophysics Data System (ADS)

Gonschior, C. P.; Klein, K.-F.; Sun, T.; Grattan, K. T. V.

2012-04-01

As the demand for high power fiber-coupled violet laser systems increases existing problems remain. The typical power of commercially available diode lasers around 400 nm is in the order of 100 to 300 mW, depending on the type of laser. But in combination with the small core of single-mode fibers reduced spot sizes are needed for good coupling efficiencies, leading to power densities in the MW/cm2 range. We investigated the influence of 405 nm laser light irradiation on different fused silica fibers and differently treated end-faces. The effect of glued-and-polished, cleaved-and-clamped and of cleaved-and-fusion-arc-treated fiber end-faces on the damage rate and behavior are presented. In addition, effects in the deep ultra-violet were determined spectrally using newest spectrometer technology, allowing the measurement of color centers around 200 nm in small core fibers. Periodic surface structures were found on the proximal end-faces and were investigated concerning generation control parameters and composition. The used fiber types range from low-mode fiber to single-mode and polarization-maintaining fiber. For this investigation 405 nm single-mode or multi-mode diode lasers with 150 mW or 300 mW, respectively, were employed.

Simultaneous fluorescence and quantitative phase microscopy with single-pixel detectors

NASA Astrophysics Data System (ADS)

Liu, Yang; Suo, Jinli; Zhang, Yuanlong; Dai, Qionghai

2018-02-01

Multimodal microscopy offers high flexibilities for biomedical observation and diagnosis. Conventional multimodal approaches either use multiple cameras or a single camera spatially multiplexing different modes. The former needs expertise demanding alignment and the latter suffers from limited spatial resolution. Here, we report an alignment-free full-resolution simultaneous fluorescence and quantitative phase imaging approach using single-pixel detectors. By combining reference-free interferometry with single-pixel detection, we encode the phase and fluorescence of the sample in two detection arms at the same time. Then we employ structured illumination and the correlated measurements between the sample and the illuminations for reconstruction. The recovered fluorescence and phase images are inherently aligned thanks to single-pixel detection. To validate the proposed method, we built a proof-of-concept setup for first imaging the phase of etched glass with the depth of a few hundred nanometers and then imaging the fluorescence and phase of the quantum dot drop. This method holds great potential for multispectral fluorescence microscopy with additional single-pixel detectors or a spectrometer. Besides, this cost-efficient multimodal system might find broad applications in biomedical science and neuroscience.

A portable high-power diode laser-based single-stage ceramic tile grout sealing system

NASA Astrophysics Data System (ADS)

Lawrence, J.; Schmidt, M. J. J.; Li, L.; Edwards, R. E.; Gale, A. W.

2002-02-01

By means of a 60 W high-power diode laser (HPDL) and a specially developed grout material the void between adjoining ceramic tiles has been successfully sealed. A single-stage process has been developed which uses a crushed ceramic tile mix to act as a tough, inexpensive bulk substrate and a glazed enamel surface to provide an impervious surface glaze. The single-stage ceramic tile grout sealing process yielded seals produced in normal atmospheric conditions that displayed no discernible cracks and porosities. The single-stage grout is simple to formulate and easy to apply. Tiles were successfully sealed with power densities as low as 200 kW/ mm2 and at rates of up to 600 mm/ min. Bonding of the enamel to the crushed ceramic tile mix was identified as being primarily due to van der Waals forces and, on a very small scale, some of the crushed ceramic tile mix material dissolving into the glaze. In terms of mechanical, physical and chemical characteristics, the single-stage ceramic tile grout was found to be far superior to the conventional epoxy tile grout and, in many instances, matched and occasionally surpassed that of the ceramic tiles themselves. What is more, the development of a hand-held HPDL beam delivery unit and the related procedures necessary to lead to the commercialisation of the single-stage ceramic tile grout sealing process are presented. Further, an appraisal of the potential hazards associated with the use of the HPDL in an industrial environment and the solutions implemented to ensure that the system complies with the relevant safety standards are given.

Single-Phase Single-Stage Grid Tied Solar PV System with Active Power Filtering Using Power Balance Theory

NASA Astrophysics Data System (ADS)

Singh, Yashi; Hussain, Ikhlaq; Singh, Bhim; Mishra, Sukumar

2018-06-01

In this paper, power quality features such as harmonics mitigation, power factor correction with active power filtering are addressed in a single-stage, single-phase solar photovoltaic (PV) grid tied system. The Power Balance Theory (PBT) with perturb and observe based maximum power point tracking algorithm is proposed for the mitigation of power quality problems in a solar PV grid tied system. The solar PV array is interfaced to a single phase AC grid through a Voltage Source Converter (VSC), which provides active power flow from a solar PV array to the grid as well as to the load and it performs harmonics mitigation using PBT based control. The solar PV array power varies with sunlight and due to this, the solar PV grid tied VSC works only 8-10 h per day. At night, when PV power is zero, the VSC works as an active power filter for power quality improvement, and the load active power is delivered by the grid to the load connected at the point of common coupling. This increases the effective utilization of a VSC. The system is modelled and simulated using MATLAB and simulated responses of the system at nonlinear loads and varying environmental conditions are also validated experimentally on a prototype developed in the laboratory.

Single-Phase Single-Stage Grid Tied Solar PV System with Active Power Filtering Using Power Balance Theory

NASA Astrophysics Data System (ADS)

Singh, Yashi; Hussain, Ikhlaq; Singh, Bhim; Mishra, Sukumar

2018-03-01

In this paper, power quality features such as harmonics mitigation, power factor correction with active power filtering are addressed in a single-stage, single-phase solar photovoltaic (PV) grid tied system. The Power Balance Theory (PBT) with perturb and observe based maximum power point tracking algorithm is proposed for the mitigation of power quality problems in a solar PV grid tied system. The solar PV array is interfaced to a single phase AC grid through a Voltage Source Converter (VSC), which provides active power flow from a solar PV array to the grid as well as to the load and it performs harmonics mitigation using PBT based control. The solar PV array power varies with sunlight and due to this, the solar PV grid tied VSC works only 8-10 h per day. At night, when PV power is zero, the VSC works as an active power filter for power quality improvement, and the load active power is delivered by the grid to the load connected at the point of common coupling. This increases the effective utilization of a VSC. The system is modelled and simulated using MATLAB and simulated responses of the system at nonlinear loads and varying environmental conditions are also validated experimentally on a prototype developed in the laboratory.

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

NASA Astrophysics Data System (ADS)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Millimeter-wave monolithic diode-grid frequency multiplier

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.

Generation of phase-locked and tunable continuous-wave radiation in the terahertz regime.

PubMed

Quraishi, Qudsia; Griebel, Martin; Kleine-Ostmann, Thomas; Bratschitsch, Rudolf

2005-12-01

Broadly tunable phase-stable single-frequency terahertz radiation is generated with an optical heterodyne photomixer. The photomixer is excited by two near-infrared CW diode lasers that are phase locked to the stabilized optical frequency comb of a femtosecond titanium:sapphire laser. The terahertz radiation emitted by the photomixer is downconverted into RF frequencies with a waveguide harmonic mixer and measurement-limited linewidths at the Hertz level are demonstrated.

An accurate behavioral model for single-photon avalanche diode statistical performance simulation

NASA Astrophysics Data System (ADS)

Xu, Yue; Zhao, Tingchen; Li, Ding

2018-01-01

An accurate behavioral model is presented to simulate important statistical performance of single-photon avalanche diodes (SPADs), such as dark count and after-pulsing noise. The derived simulation model takes into account all important generation mechanisms of the two kinds of noise. For the first time, thermal agitation, trap-assisted tunneling and band-to-band tunneling mechanisms are simultaneously incorporated in the simulation model to evaluate dark count behavior of SPADs fabricated in deep sub-micron CMOS technology. Meanwhile, a complete carrier trapping and de-trapping process is considered in afterpulsing model and a simple analytical expression is derived to estimate after-pulsing probability. In particular, the key model parameters of avalanche triggering probability and electric field dependence of excess bias voltage are extracted from Geiger-mode TCAD simulation and this behavioral simulation model doesn't include any empirical parameters. The developed SPAD model is implemented in Verilog-A behavioral hardware description language and successfully operated on commercial Cadence Spectre simulator, showing good universality and compatibility. The model simulation results are in a good accordance with the test data, validating high simulation accuracy.

4H-SiC p i n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

NASA Astrophysics Data System (ADS)

Camara, N.; Zekentes, K.; Zelenin, V. V.; Abramov, P. L.; Kirillov, A. V.; Romanov, L. P.; Boltovets, N. S.; Krivutsa, V. A.; Thuaire, A.; Bano, E.; Tsoi, E.; Lebedev, A. A.

2008-02-01

Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p-i-n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method for carrier diffusion length determination, electro-luminescence microscopy (EL), deep level transient spectroscopy (DLTS), C-V profiling and Hall-effect measurements. When possible, the same investigation techniques were used in parallel with similar layers grown by chemical vapour deposition (CVD) epitaxy and the physical properties of the two kind of epitaxied layers were compared. p-i-n diodes were fabricated in parallel on SEV and CVD-grown layers and showed close electrical performances in dc mode in term of capacitance, resistance and transient time switching, despite the lower mobility and the diffusion length of the SEV-grown layers. X-band microwave switches based on the SEV-grown p-i-n diodes have been demonstrated with insertion loss lower than 4 dB and an isolation higher than 17 dB. These single-pole single-throw (SPST) switches were able to handle a pulsed power up to 1800 W in isolation mode, similar to the value obtained with switches incorporating diodes with CVD-grown layers.

Water equivalent path length measurement in proton radiotherapy using time resolved diode dosimetry

PubMed Central

Gottschalk, B.; Tang, S.; Bentefour, E. H.; Cascio, E. W.; Prieels, D.; Lu, H.-M.

2011-01-01

Purpose: To verify water equivalent path length (WEPL) before treatment in proton radiotherapy using time resolved in vivo diode dosimetry. Methods: Using a passively scattered range modulated proton beam, the output of a diode driving a fast current-to-voltage amplifier is recorded at a number of depths in a water tank. At each depth, a burst of overlapping single proton pulses is observed. The rms duration of the burst is computed and the resulting data set is fitted with a cubic polynomial. Results: When the diode is subsequently set to an arbitrary depth and the polynomial is used as a calibration curve, the “unknown” depth is determined within 0.3 mm rms. Conclusions: A diode or a diode array, placed (for instance) in the rectum in conjunction with a rectal balloon, can potentially determine the WEPL at that point, just prior to treatment, with submillimeter accuracy, allowing the beam energy to be adjusted. The associated unwanted dose is about 0.2% of a typical single fraction treatment dose. PMID:21626963

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

Spin-wave diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lan, Jin; Yu, Weichao; Wu, Ruqian

A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound statesmore » in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. As a result, these findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.« less

Spin-wave diode

DOE PAGES

Lan, Jin; Yu, Weichao; Wu, Ruqian; ...

2015-12-28

A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound statesmore » in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. As a result, these findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.« less

Stacked, filtered multi-channel X-ray diode array

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacNeil, Lawrence; Dutra, Eric; Raphaelian, Mark

2015-08-01

There are many types of X-ray diodes used for X-ray flux or spectroscopic measurements and for estimating the spectral shape of the VUV to soft X-ray spectrum. However, a need exists for a low-cost, robust X-ray diode to use for experiments in hostile environments on multiple platforms, and for experiments that utilize forces that may destroy the diode(s). Since the typical proposed use required a small size with a minimal single line-of-sight, a parallel array could not be used. So, a stacked, filtered multi-channel X-ray diode array was developed, called the MiniXRD. To achieve significant cost savings while maintaining robustnessmore » and ease of field setup, repair, and replacement, we designed the system to be modular. The filters were manufactured in-house and cover the range from 450 eV to 5000 eV. To achieve the line-of-sight accuracy needed, we developed mounts and laser alignment techniques. We modeled and tested elements of the diode design at NSTec Livermore Operations (NSTec / LO) to determine temporal response and dynamic range, leading to diode shape and circuitry changes to optimize impedance and charge storage. The authors fielded individual and stacked systems at several national facilities as ancillary "ride-along" diagnostics to test and improve the design usability. This paper presents the MiniXRD system performance, which supports consideration as a viable low-costalternative for multiple-channel low-energy X-ray measurements. This diode array is currently at Technical Readiness Level (TRL) 6.« less

Diode amplifier of modulated optical beam power

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'yachkov, N V; Bogatov, A P; Gushchik, T I

2014-11-30

Analytical relations are obtained between characteristics of modulated light at the output and input of an optical diode power amplifier operating in the highly saturated gain regime. It is shown that a diode amplifier may act as an amplitude-to-phase modulation converter with a rather large bandwidth (∼10 GHz). The low sensitivity of the output power of the amplifier to the input beam power and its high energy efficiency allow it to be used as a building block of a high-power multielement laser system with coherent summation of a large number of optical beams. (lasers)

In Situ Observation of Single-Phase Lithium Intercalation in Sub-25-nm Nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Li; Liu, Yang; Han, Wei-Qiang

Although a non-equilibrium single-phase reaction, with the absence of nucleation and growth of a second phase, is believed to be a key factor for high-rate performance of lithium-ion batteries, it is thermodynamically unfavorable and usually proceeds in electrode materials with small particle sizes (tens of nanometers). Unfortunately, the phase evolutions inside such small particles are often shrouded by the macroscopic inhomogeneous reactions of electrodes containing millions of particles, leading to intensive debate over the size-dependent microscopic reaction mechanisms. Here, we provide a generally applicable methodology based on in-situ electron diffraction study on a multi-particle system to track the lithiation pathwaysmore » in individual nanoparticles, and unambiguously reveal that lithiation of anatase TiO 2, previously long believed to be biphasic, converts to a single-phase reaction when the particle size is below ~25 nm. Our results imply the prevalence of such a size-dependent transition in lithiation mechanism among intercalation compounds whose lithium miscibility gaps are associated with a prominent size effect, and therefore provide important guidelines for designing high-power electrodes, especially cathodes.« less

In Situ Observation of Single-Phase Lithium Intercalation in Sub-25-nm Nanoparticles

DOE PAGES

Zhong, Li; Liu, Yang; Han, Wei-Qiang; ...

2017-05-05

Although a non-equilibrium single-phase reaction, with the absence of nucleation and growth of a second phase, is believed to be a key factor for high-rate performance of lithium-ion batteries, it is thermodynamically unfavorable and usually proceeds in electrode materials with small particle sizes (tens of nanometers). Unfortunately, the phase evolutions inside such small particles are often shrouded by the macroscopic inhomogeneous reactions of electrodes containing millions of particles, leading to intensive debate over the size-dependent microscopic reaction mechanisms. Here, we provide a generally applicable methodology based on in-situ electron diffraction study on a multi-particle system to track the lithiation pathwaysmore » in individual nanoparticles, and unambiguously reveal that lithiation of anatase TiO 2, previously long believed to be biphasic, converts to a single-phase reaction when the particle size is below ~25 nm. Our results imply the prevalence of such a size-dependent transition in lithiation mechanism among intercalation compounds whose lithium miscibility gaps are associated with a prominent size effect, and therefore provide important guidelines for designing high-power electrodes, especially cathodes.« less

Quaternion-valued single-phase model for three-phase power system

NASA Astrophysics Data System (ADS)

Gou, Xiaoming; Liu, Zhiwen; Liu, Wei; Xu, Yougen; Wang, Jiabin

2018-03-01

In this work, a quaternion-valued model is proposed in lieu of the Clarke's α, β transformation to convert three-phase quantities to a hypercomplex single-phase signal. The concatenated signal can be used for harmonic distortion detection in three-phase power systems. In particular, the proposed model maps all the harmonic frequencies into frequencies in the quaternion domain, while the Clarke's transformation-based methods will fail to detect the zero sequence voltages. Based on the quaternion-valued model, the Fourier transform, the minimum variance distortionless response (MVDR) algorithm and the multiple signal classification (MUSIC) algorithm are presented as examples to detect harmonic distortion. Simulations are provided to demonstrate the potentials of this new modeling method.

Phase retrieval without unwrapping by single-shot dual-wavelength digital holography

NASA Astrophysics Data System (ADS)

Min, Junwei; Yao, Baoli; Zhou, Meiling; Guo, Rongli; Lei, Ming; Yang, Yanlong; Dan, Dan; Yan, Shaohui; Peng, Tong

2014-12-01

A phase retrieval method by using single-shot dual-wavelength digital holography is proposed. Each single wavelength hologram is extracted from the color CCD recorded hologram at one exposure, and the unwrapped phase image of object can be reconstructed directly. Different from the traditional multiple wavelength phase unwrapping techniques, any single complex wave-fronts at different wavelengths have no need to be calculated any more. Thus, the phase retrieval is computationally fast and straightforward, and the limitations on the total optical path difference are significantly relaxed. The practicability of the proposed method is demonstrated by both simulated and experimental results.

An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

PubMed

Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

2018-03-01

Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

An ultra low noise telecom wavelength free running single photon detector using negative feedback avalanche diode

NASA Astrophysics Data System (ADS)

Yan, Zhizhong; Hamel, Deny R.; Heinrichs, Aimee K.; Jiang, Xudong; Itzler, Mark A.; Jennewein, Thomas

2012-07-01

It is challenging to implement genuine free running single-photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for the signals from a negative feedback avalanche diode (NFAD) [M. A. Itzler, X. Jiang, B. Nyman, and K. Slomkowski, "Quantum sensing and nanophotonic devices VI," Proc. SPIE 7222, 72221K (2009), 10.1117/12.814669; X. Jiang, M. A. Itzler, K. ODonnell, M. Entwistle, and K. Slomkowski, "Advanced photon counting techniques V," Proc. SPIE 8033, 80330K (2011), 10.1117/12.883543; M. A. Itzler, X. Jiang, B. M. Onat, and K. Slomkowski, "Quantum sensing and nanophotonic devices VII," Proc. SPIE 7608, 760829 (2010), 10.1117/12.843588], which allows useful operation of these devices at a temperature of 193 K and results in very low darkcounts (˜100 counts per second (CPS)), good time jitter (˜30 ps), and good DE (˜10%). We characterized two NFADs with a time-correlation method using photons generated from weak coherent pulses and photon pairs produced by spontaneous parametric down conversion. The inferred detector efficiencies for both types of photon sources agree with each other. The best noise equivalent power of the device is estimated to be 8.1 × 10-18 W Hz-1/2, more than 10 times better than typical InP/InGaAs single photon avalanche diodes (SPADs) show in free running mode. The afterpulsing probability was found to be less than 0.1% per ns at the optimized operating point. In addition, we studied the performance of an entanglement-based quantum key distribution (QKD) using these detectors and develop a model for the quantum bit error rate that incorporates the afterpulsing coefficients. We verified experimentally that using these NFADs it is feasible to implement QKD over 400 km of telecom fiber. Our NFAD photon detector system is very simple, and is well suited for single-photon applications where ultra-low noise and free

Tuneable diode laser spectroscopy correction factor investigation on ammonia measurement

NASA Astrophysics Data System (ADS)

Li, Nilton; El-Hamalawi, Ashraf; Baxter, Jim; Barrett, Richard; Wheatley, Andrew

2018-01-01

Current diesel engine aftertreatment systems, such as Selective Catalyst Reduction (SCR) use ammonia (NH3) to reduce Nitrogen Oxides (NOx) into Nitrogen (N2) and water (H2O). However, if the reaction between NH3 and NOx is unbalanced, it can lead either NH3 or NOx being released into the environment. As NH3 is classified as a dangerous compound in the environment, its accurate measurement is essential. Tuneable Diode Laser (TDL) spectroscopy is one of the methods used to measure raw emissions inside engine exhaust pipes, especially NH3. This instrument requires a real-time exhaust temperature, pressure and other interference compounds in order to adjust itself to reduce the error in NH3 readings. Most researchers believed that exhaust temperature and pressure were the most influential factors in TDL when measuring NH3 inside exhaust pipes. The aim of this paper was to quantify these interference effects on TDL when undertaking NH3 measurement. Surprisingly, the results show that pressure was the least influential factor when compared to temperature, H2O, CO2 and O2 when undertaking NH3 measurement using TDL.

Directional control of infrared antenna-coupled tunnel diodes.

PubMed

Slovick, Brian A; Bean, Jeffrey A; Krenz, Peter M; Boreman, Glenn D

2010-09-27

Directional control of received infrared radiation is demonstrated with a phased-array antenna connected by a coplanar strip transmission line to a metal-oxide-metal (MOM) tunnel diode. We implement a MOM diode to ensure that the measured response originates from the interference of infrared antenna currents at specific locations in the array. The reception angle of the antenna is altered by shifting the diode position along the transmission line connecting the antenna elements. By fabricating the devices on a quarter wave dielectric layer above a ground plane, narrow beam widths of 35° FWHM in power and reception angles of ± 50° are achieved with minimal side lobe contributions. Measured radiation patterns at 10.6 μm are substantiated by electromagnetic simulations as well as an analytic interference model.

Foundry fabricated photonic integrated circuit optical phase lock loop.

PubMed

Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C

2017-07-24

This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

Single-frequency Nd:YAG ring lasers with corner cube prism

NASA Astrophysics Data System (ADS)

Wu, Ke Ying; Yang, Su Hui; Zhao, Chang Ming; Wei, Guang Hui

2000-04-01

Kane and Byer reported the first monolithic non-planar miniature ring lasers in 1985. An intrinsic optical diode enforces unidirectional and hence single-frequency oscillation of this device. It has the advantages of compactness, reliability and high efficiency. We put forward another form of the non-planar ring lasers, in which the corner cube prism is the key element and the Nd:YAG crystal is used as a Porro prism to enclose the ring resonator. The phase shift due to the total internal reflections of the three differently orientated reflection planes of the corner cube prism, Faraday rotation in the Nd:YAG crystal placed in a magnetic field and the different output coupling in S and P polarization form an optical diode and enforce the single- frequency generating. A round trip analysis of the polarization properties of the resonator is made by the evaluation of Jones matrix. The results of our initial experiment are given in the paper.

Single-arm phase II trial design under parametric cure models.

PubMed

Wu, Jianrong

2015-01-01

The current practice of designing single-arm phase II survival trials is limited under the exponential model. Trial design under the exponential model may not be appropriate when a portion of patients are cured. There is no literature available for designing single-arm phase II trials under the parametric cure model. In this paper, a test statistic is proposed, and a sample size formula is derived for designing single-arm phase II trials under a class of parametric cure models. Extensive simulations showed that the proposed test and sample size formula perform very well under different scenarios. Copyright © 2015 John Wiley & Sons, Ltd.

Research and Development of Laser Diode Based Instruments for Applications in Space

NASA Technical Reports Server (NTRS)

Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg

1999-01-01

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-03-01

TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

Constricted double-heterojunction AlGaAs diode lasers - Structures and electrooptical characteristics

NASA Technical Reports Server (NTRS)

Botez, D.

1981-01-01

Constricted double-heterojunction (CDH) diode lasers are presented as a class of nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various CDH structures are discussed while treating such topics as liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers with positive-index lateral mode confinement provides single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C, while exhibiting light-current characteristics with second-harmonic distortions as low as -57 dB below the fundamental level. Semileaky guide CDH lasers with an asymmetric leaky cavity provide single-mode operation to 15-20 mW/facet CW, and to 50 mW/facet at 50% duty cycle.

Phase recovery from a single interferogram with closed fringes by phase unwrapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Munoz-Maciel, Jesus; Casillas-Rodriguez, Francisco J.; Mora-Gonzalez, Miguel

2011-01-01

We describe a new algorithm for phase determination from a single interferogram with closed fringes based on an unwrapping procedure. Here we use bandpass filtering in the Fourier domain, obtaining two wrapped phases with sign changes corresponding to the orientation of the applied filters. An unwrapping scheme that corrects the sign ambiguities by comparing the local derivatives is then proposed. This can be done, assuming that the phase derivatives do not change abruptly among adjacent areas as occurs with smooth continuous phase maps. The proposed algorithm works fast and is robust against noise, as demonstrated in experimental and simulated data.

Nd:GdVO4 ring laser pumped by laser diodes

NASA Astrophysics Data System (ADS)

Hao, E. J.; Li, T.; Wang, Z. D.; Zhang, Y.

2013-02-01

The design and operation of a laser diode-pumped Nd:GdVO4 ring laser is described. A composite crystal (Nd:GdVO4/YVO4) with undoped ends is single-end pumped by a fiber-coupled laser diode (LD) at 808 nm. A four-mirror ring cavity is designed to keep the laser operating unidirectionally, which eliminates spatial hole burning in the standing-wave cavity. This laser can operate either as continuous wave (CW) or Q-switched. The single-frequency power obtained was 9.1 W at 1063 nm. Q-switched operation produced 0.23 mJ/pulse at 20 kHz in the fundamental laser.

A shock isolator for diode laser operation on a closed-cycle refrigerator

NASA Technical Reports Server (NTRS)

Jennings, D. F.; Hillman, J. J.

1977-01-01

A device developed to isolate the diode laser from impact shocks delivered during the expansion phase of the Solvay cycle of a helium refrigerator is briefly described. The device uses intermediate cold stations in the stand-off, which permit the stand-off to be short and rigid while minimizing the thermal load at the diode mount.

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-10-01

AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

Diode-laser frequency stabilization based on the resonant Faraday effect

NASA Technical Reports Server (NTRS)

Wanninger, P.; Valdez, E. C.; Shay, T. M.

1992-01-01

The authors present the results of a method for frequency stabilizing laser diodes based on the resonant Faraday effects. A Faraday cell in conjunction with a polarizer crossed with respect to the polarization of the laser diode comprises the intracavity frequency selective element. In this arrangement, a laser pull-in range of 9 A was measured, and the laser operated at a single frequency with a linewidth less than 6 MHz.

A fluidic diode, valves, and a sequential-loading circuit fabricated on layered paper.

PubMed

Chen, Hong; Cogswell, Jeremy; Anagnostopoulos, Constantine; Faghri, Mohammad

2012-08-21

Current microfluidic paper-based devices lack crucial components for fluid manipulation. We created a fluidic diode fabricated entirely on a single layer of paper to control the wicking of fluids. The fluidic diode is a two-terminal component that promotes or stops wicking along a paper channel. We further constructed a trigger and a delay valve based on the fluidic diode. Furthermore, we demonstrated a high-level functional circuit, consisting of a diode and a delay valve, to manipulate two fluids in a sequential manner. Our study provides new, transformative tools to manipulate fluid in microfluidic paper-based devices.

SU-E-T-376: Evaluation of a New Stereotactic Diode for Small Field Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kralik, J; Kosterin, P; Mooij, R

2015-06-15

Purpose: To evaluate the performance of a new stereotactic diode for dosimetry of small photon fields. Methods: A new stereotactic diode, consisting of an unshielded p-type silicon chip, and with improved radiation hardness energy dependence was recently developed (IBA Dosimetry, Schwarzenbruch, Germany). The diode has an active volume of 0.6 mm dia. x 0.02 mm thick. Two new diodes were evaluated, one which was pre-irradiated to 100kGy with 10 MeV electrons and another which received no prior irradiation. Sensitivity, stability, reproducibility, and linearity as a function of dose were assessed. Beam profiles and small field output factors were measured onmore » a CyberKnife (CK) and compared with measurements using two commercially available diodes. Results: The new diodes exhibit linear behavior (within 0.6%) over a dose range 0.02 – 50 Gy; a commercially available device exhibits excursions of up to 4% over the same range. The sensitivity is 4.1 and 3.8 nC/Gy for the un-irradiated and pre-irradiated diodes, respectively. When irradiated with 150 Gy in dose increments of 5, 20 and 35 Gy, both new diodes provide a stable response within 0.5%. Output factors measured with the two new diodes are identical and compare favorably with other commercially available diodes and published data. Similarly, no differences in measured field size or penumbra were observed among the devices tested. Conclusion: The new diodes show excellent stability and sensitivity. The beam characterization in terms of output factors and beam profiles is consistent with that obtained with commercially available diodes.« less

Asymmetric anode and cathode extraction structure fast recovery diode

NASA Astrophysics Data System (ADS)

Xie, Jiaqiang; Ma, Li; Gao, Yong

2018-05-01

This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%. Project supported by the National Natural Science Foundation of China (No. 51177133).

The Single-Phase ProtoDUNE Technical Design Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abi, B.

2017-06-21

ProtoDUNE-SP is the single-phase DUNE Far Detector prototype that is under construction and will be operated at the CERN Neutrino Platform (NP) starting in 2018. ProtoDUNE-SP, a crucial part of the DUNE effort towards the construction of the first DUNE 10-kt fiducial mass far detector module (17 kt total LAr mass), is a significant experiment in its own right. With a total liquid argon (LAr) mass of 0.77 kt, it represents the largest monolithic single-phase LArTPC detector to be built to date. It's technical design is given in this report.

Orthogonal control of the frequency comb dynamics of a mode-locked laser diode.

PubMed

Holman, Kevin W; Jones, David J; Ye, Jun; Ippen, Erich P

2003-12-01

We have performed detailed studies on the dynamics of a frequency comb produced by a mode-locked laser diode (MLLD). Orthogonal control of the pulse repetition rate and the pulse-to-pulse carrier-envelope phase slippage is achieved by appropriate combinations of the respective error signals to actuate the diode injection current and the saturable absorber bias voltage. Phase coherence is established between the MLLD at 1550 nm and a 775-nm mode-locked Ti:sapphire laser working as part of an optical atomic clock.

Harmonic balance optimization of terahertz Schottky diode multipliers using an advanced device model

NASA Technical Reports Server (NTRS)

Schlecht, E. T.; Chattopadhyay, G.; Maestrini, A.; Pukala, D.; Gill, J.; Mehdi, I.

2002-01-01

Substantial proress has been made recently in the advancement of solid state terahertz sources using chains of Schottky diode frequency multipliers. We have developed a harmonic balance simulator and corresponding diode model that incorporates many other factors participating in the diode behavior.

Determination of the Maximum Temperature in a Non-Uniform Hot Zone by Line-of-Site Absorption Spectroscopy with a Single Diode Laser.

PubMed

Liger, Vladimir V; Mironenko, Vladimir R; Kuritsyn, Yurii A; Bolshov, Mikhail A

2018-05-17

A new algorithm for the estimation of the maximum temperature in a non-uniform hot zone by a sensor based on absorption spectrometry with a diode laser is developed. The algorithm is based on the fitting of the absorption spectrum with a test molecule in a non-uniform zone by linear combination of two single temperature spectra simulated using spectroscopic databases. The proposed algorithm allows one to better estimate the maximum temperature of a non-uniform zone and can be useful if only the maximum temperature rather than a precise temperature profile is of primary interest. The efficiency and specificity of the algorithm are demonstrated in numerical experiments and experimentally proven using an optical cell with two sections. Temperatures and water vapor concentrations could be independently regulated in both sections. The best fitting was found using a correlation technique. A distributed feedback (DFB) diode laser in the spectral range around 1.343 µm was used in the experiments. Because of the significant differences between the temperature dependences of the experimental and theoretical absorption spectra in the temperature range 300⁻1200 K, a database was constructed using experimentally detected single temperature spectra. Using the developed algorithm the maximum temperature in the two-section cell was estimated with accuracy better than 30 K.

A new single-photon avalanche diode in 90nm standard CMOS technology.

PubMed

Karami, Mohammad Azim; Gersbach, Marek; Yoon, Hyung-June; Charbon, Edoardo

2010-10-11

We report on the first implementation of a single-photon avalanche diode (SPAD) in 90nm complementary metal oxide semiconductor (CMOS) technology. The detector features an octagonal multiplication region and a guard ring to prevent premature edge breakdown using a standard mask set exclusively. The proposed structure emerged from a systematic study aimed at miniaturization, while optimizing overall performance. The guard ring design is the result of an extensive modeling effort aimed at constraining the multiplication region within a well-defined area where the electric field exceeds the critical value for impact ionization. The device exhibits a dark count rate of 8.1 kHz, a maximum photon detection probability of 9% and the jitter of 398ps at a wavelength of 637nm, all of them measured at room temperature and 0.13V of excess bias voltage. An afterpulsing probability of 32% is achieved at the nominal dead time. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures.

Distributed feedback laser diode integrated with distributed Bragg reflector for continuous-wave terahertz generation.

PubMed

Kim, Namje; Han, Sang-Pil; Ryu, Han-Cheol; Ko, Hyunsung; Park, Jeong-Woo; Lee, Donghun; Jeon, Min Yong; Park, Kyung Hyun

2012-07-30

A widely tunable dual mode laser diode with a single cavity structure is demonstrated. This novel device consists of a distributed feedback (DFB) laser diode and distributed Bragg reflector (DBR). Micro-heaters are integrated on the top of each section for continuous and independent wavelength tuning of each mode. By using a single gain medium in the DFB section, an effective common optical cavity and common modes are realized. The laser diode shows a wide tunability of the optical beat frequency, from 0.48 THz to over 2.36 THz. Continuous wave THz radiation is also successfully generated with low-temperature grown InGaAs photomixers from 0.48 GHz to 1.5 THz.

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

Single-phase helium recooling in a Tevatron spool piece

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klebaner, A.L.

2000-01-27

Plans call for upgrading existing Tevatron spool pieces by adding a single-phase to two-phase heat exchanger or recooler. This will enhance the single-phase to two-phase heat transfer and, along with other upgrades, allow for higher energy beam in the upcoming run. The performance of the heat exchanger was predicted numerically using a multi-node finite difference model. One Tevatron spool piece was modified to incorporate the recooler. Performance tests were conducted on this modified spool at the Magnet Test Facility within Technical Division in March and April 1999. The present paper reviews the design of the Tevatron spool recooler. The discussionmore » includes: a technical description of a Tevatron spool; the heat exchanger mathematical model; design criteria and constraints; fabrication and assembly procedure; tests and performance analysis.« less

Novel diode laser-based sensors for gas sensing applications

NASA Technical Reports Server (NTRS)

Tittel, F. K.; Lancaster, D. G.; Richter, D.

2000-01-01

The development of compact spectroscopic gas sensors and their applications to environmental sensing will be described. These sensors employ mid-infrared difference-frequency generation (DFG) in periodically poled lithium niobate (PPLN) crystals pumped by two single-frequency solid state lasers such as diode lasers, diode-pumped solid state, and fiber lasers. Ultrasensitive, highly selective, and real-time measurements of several important atmospheric trace gases, including carbon monoxide, nitrous oxide, carbon dioxide, formaldehyde [correction of formaldehye], and methane, have been demonstrated.

Laser cutting metallic plates using a 2kW direct diode laser source

NASA Astrophysics Data System (ADS)

Fallahi Sichani, E.; Hauschild, D.; Meinschien, J.; Powell, J.; Assunção, E. G.; Blackburn, J.; Khan, A. H.; Kong, C. Y.

2015-07-01

This paper investigates the feasibility of using a 2kW direct diode laser source for producing high-quality cuts in a variety of materials. Cutting trials were performed in a two-stage experimental procedure. The first phase of trials was based on a one-factor-at-a-time change of process parameters aimed at exploring the process window and finding a semi-optimum set of parameters for each material/thickness combination. In the second phase, a full factorial experimental matrix was performed for each material and thickness, as a result of which, the optimum cutting parameters were identified. Characteristic values of the optimum cuts were then measured as per BS EN ISO 9013:2002.

Tunable phase transition in single-layer TiSe2 via electric field

NASA Astrophysics Data System (ADS)

Liu, Lei; Zhuang, Houlong L.

2018-06-01

Phase transition represents an intriguing physical phenomenon that exists in a number of single-layer transition-metal dichalcogenides. This phenomenon often occurs below a critical temperature and breaks the long-range crystalline order leading to a reconstructed superstructure called the charge-density wave (CDW) structure, which can therefore be recovered by external stimuli such as temperature. Alternatively, we show here that another external stimulation, electric field can also result in the phase transition between the regular and CDW structures of a single-layer transition-metal dichalcogenide. We used single-layer TiSe2 as an example to elucidate the mechanism of the CDW followed by calculations of the electronic structure using a hybrid density functional. We found that applying electric field can tune the phase transition between the 1T and CDW phases of single-layer TiSe2. Our work opens up a route of tuning the phase transition of single-layer materials via electric field.

Emerging single-phase state in small manganite nanodisks

DOE PAGES

Shao, Jian; Liu, Hao; Zhang, Kai; ...

2016-08-01

In complex oxides systems such as manganites, electronic phase separation (EPS), a consequence of strong electronic correlations, dictates the exotic electrical and magnetic properties of these materials. A fundamental yet unresolved issue is how EPS responds to spatial confinement; will EPS just scale with size of an object, or will the one of the phases be pinned? Understanding this behavior is critical for future oxides electronics and spintronics because scaling down of the system is unavoidable for these applications. In this work, we use La 0.325Pr 0.3Ca 0.375MnO 3 (LPCMO) single crystalline disks to study the effect of spatial confinementmore » on EPS. The EPS state featuring coexistence of ferromagnetic metallic and charge order insulating phases appears to be the low-temperature ground state in bulk, thin films, and large disks, a previously unidentified ground state (i.e., a single ferromagnetic phase state emerges in smaller disks). The critical size is between 500 nm and 800 nm, which is similar to the characteristic length scale of EPS in the LPCMO system. The ability to create a pure ferromagnetic phase in manganite nanodisks is highly desirable for spintronic applications.« less

Phase modulation in RF tag

DOEpatents

Carrender, Curtis Lee; Gilbert, Ronald W.

2007-02-20

A radio frequency (RF) communication system employs phase-modulated backscatter signals for RF communication from an RF tag to an interrogator. The interrogator transmits a continuous wave interrogation signal to the RF tag, which based on an information code stored in a memory, phase-modulates the interrogation signal to produce a backscatter response signal that is transmitted back to the interrogator. A phase modulator structure in the RF tag may include a switch coupled between an antenna and a quarter-wavelength stub; and a driver coupled between the memory and a control terminal of the switch. The driver is structured to produce a modulating signal corresponding to the information code, the modulating signal alternately opening and closing the switch to respectively decrease and increase the transmission path taken by the interrogation signal and thereby modulate the phase of the response signal. Alternatively, the phase modulator may include a diode coupled between the antenna and driver. The modulating signal from the driver modulates the capacitance of the diode, which modulates the phase of the response signal reflected by the diode and antenna.

Tunable diode-laser heterodyne spectrometer for remote observations near 8 microns

NASA Technical Reports Server (NTRS)

Glenar, D.; Kostiuk, T.; Jennings, D. E.; Buhl, D.; Mumma, M. J.

1982-01-01

A diode-laser-based, ultrahigh resolution IR heterodyne spectrometer for laboratory and field use has been developed for operation between 7.5 and 8.5 microns. The local oscillator is a PbSe tunable diode laser kept continuously at operating temperatures of 12-60 K using a closed-cycle cooler. The laser output frequency is controlled and stabilized using a high-precision diode current supply, constant temperature controller, and a shock isolator mounted between the refrigerator cold tip and the diode mount. The system largely employs reflecting optics to minimize losses from internal reflection and absorption and to eliminate chromatic effects. Spectral analysis of the diode-laser output between 0 and 1 GHz reveals excess noise at many diode current settings, which limits the IR spectral regions over which useful heterodyne operation can be achieved. Observations have been made of atmospheric N2O, O3, and CH4 between 1170 and 1200/cm, using both a single-frequency swept IF channel and a 64-channel RF spectral line receiver with a total IF coverage of 1600 MHz.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Liquid phase epitaxial growth of GaInAsP/InP laser structures

NASA Astrophysics Data System (ADS)

Nohavica, D.; Têminová, J.; Berková, D.; Zagrádková, M.; Kortan, I.; Zelinka, I.; Walachová, I.; Malina, V.

1988-11-01

A modified single-phase liquid phase epitaxy method was developed on the basis of a novel variant of the growth boat. The method was used to grow GaInAsP/InP double heterostructures for lasers emitting at 1.3 and 1.55 μm. The main properties of wide-contact diodes (radiation power and threshold current density) were adopted as the characteristics of the quality of heterostructures characterized by different configurations of active and guiding layers. The quality of the structure was confirmed by the fabrication of laser diodes of the following types: stripe with oxide insulation, clad-ridge waveguide, and double-channel planar buried.

Electrical Investigation of Nanostructured Fe2O3/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique

NASA Astrophysics Data System (ADS)

Mansour, Shehab A.; Ibrahim, Mervat M.

2017-11-01

Iron oxide (α-Fe2O3) nanocrystals have been synthesized via the sol-gel technique. The structural and morphological features of these nanocrystals were studied using x-ray diffraction, Fourier transform-infrared spectroscopy and transmission electron microscopy. Colloidal solution of synthesized α-Fe2O3 (hematite) was spin-coated onto a single-crystal p-type silicon (p-Si) wafer to fabricate a heterojunction diode with Mansourconfiguration Ag/Fe2O3/p-Si/Al. This diode was electrically characterized at room temperature using current-voltage (I-V) characteristics in the voltage range from -9 V to +9 V. The fabricated diode showed a good rectification behavior with a rectification factor 1.115 × 102 at 6 V. The junction parameters such as ideality factor, barrier height, series resistance and shunt resistance are determined using conventional I-V characteristics. For low forward voltage, the conduction mechanism is dominated by the defect-assisted tunneling process with conventional electron-hole recombination. However, at higher voltage, I-V ohmic and space charge-limited current conduction was became less effective with the contribution of the trapped-charge-limited current at the highest voltage range.

Fixed, low radiant exposure vs. incremental radiant exposure approach for diode laser hair reduction: a randomized, split axilla, comparative single-blinded trial.

PubMed

Pavlović, M D; Adamič, M; Nenadić, D

2015-12-01

Diode lasers are the most commonly used treatment modalities for unwanted hair reduction. Only a few controlled clinical trials but not a single randomized controlled trial (RCT) compared the impact of various laser parameters, especially radiant exposure, onto efficacy, tolerability and safety of laser hair reduction. To compare the safety, tolerability and mid-term efficacy of fixed, low and incremental radiant exposures of diode lasers (800 nm) for axillary hair removal, we conducted an intrapatient, left-to-right, patient- and assessor-blinded and controlled trial. Diode laser (800 nm) treatments were evaluated in 39 study participants (skin type II-III) with unwanted axillary hairs. Randomization and allocation to split axilla treatments were carried out by a web-based randomization tool. Six treatments were performed at 4- to 6-week intervals with study subjects blinded to the type of treatment. Final assessment of hair reduction was conducted 6 months after the last treatment by means of blinded 4-point clinical scale using photographs. The primary endpoint was reduction in hair growth, and secondary endpoints were patient-rated tolerability and satisfaction with the treatment, treatment-related pain and adverse effects. Excellent reduction in axillary hairs (≥ 76%) at 6-month follow-up visit after receiving fixed, low and incremental radiant exposure diode laser treatments was obtained in 59% and 67% of study participants respectively (Z value: 1.342, P = 0.180). Patients reported lower visual analogue scale (VAS) pain score on the fixed (4.26) than on the incremental radiant exposure side (5.64) (P < 0.0003). The only side-effect was mild and transient erythema. Subjects better tolerated the fixed, low radiant exposure protocol (P = 0.03). The majority of the study participants were satisfied with both treatments. Both low and incremental radiant exposures produced similar hair reduction and high and comparable patient satisfaction. However, low radiant

Cavity-enhanced Raman spectroscopy with optical feedback cw diode lasers for gas phase analysis and spectroscopy.

PubMed

Salter, Robert; Chu, Johnny; Hippler, Michael

2012-10-21

A variant of cavity-enhanced Raman spectroscopy (CERS) is introduced, in which diode laser radiation at 635 nm is coupled into an external linear optical cavity composed of two highly reflective mirrors. Using optical feedback stabilisation, build-up of circulating laser power by 3 orders of magnitude occurs. Strong Raman signals are collected in forward scattering geometry. Gas phase CERS spectra of H(2), air, CH(4) and benzene are recorded to demonstrate the potential for analytical applications and fundamental molecular studies. Noise equivalent limits of detection in the ppm by volume range (1 bar sample) can be achieved with excellent linearity with a 10 mW excitation laser, with sensitivity increasing with laser power and integration time. The apparatus can be operated with battery powered components and can thus be very compact and portable. Possible applications include safety monitoring of hydrogen gas levels, isotope tracer studies (e.g., (14)N/(15)N ratios), observing isotopomers of hydrogen (e.g., radioactive tritium), and simultaneous multi-component gas analysis. CERS has the potential to become a standard method for sensitive gas phase Raman spectroscopy.

Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum

NASA Astrophysics Data System (ADS)

Wu, Linzhang; Tian, Wei; Gao, Feng

2004-09-01

This paper presents a self-consistent method to directly determine the effective refractive-index spectrum of a semiconductor quantum-well (QW) laser diode from the measured modal gain spectrum for a given current. The dispersion spectra of the optical waveguide confinement factor and the strongly carrier-density-dependent refractive index of the QW active layer of the test laser are also accurately obtained. The experimental result from a single QW GaInP/AlGaInP laser diode, which has 6 nm thick compressively strained Ga0.4InP active layer sandwiched by two 80 nm thick Al0.33GaInP, is presented.

Bypass diode integration

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.

1981-01-01

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Simultaneous determination of carotenoids, tocopherols, and gamma-oryzanol in crude rice bran oil by liquid chromatography coupled to diode array and mass spectrometric detection employing silica C30 stationary phases.

PubMed

Stöggl, Wolfgang; Huck, Christain; Wongyai, Surapote; Scherz, Heimo; Bonn, Günther

2005-09-01

Crude rice bran oil contains tocopherols (vitamin E), carotenoids (vitamin A), and phytosterols, which possess antioxidant activities and show promising effects as preventive and therapeutic agents. The aim of this work was to establish methods and to compare C18 and C30 silica stationary phases in order to separate and detect tocopherols, carotenoids, and gamma-oryzanol in one single run. Comparing RP-LC on silica C18 and C30, higher resolution between all target compounds was obtained using the C30 stationary phase. Methanol was used as eluent and the elution strength was increased by the addition of tert-butyl methyl ether for highly hydrophobic analytes such as gamma-oryzanol. Detection was accomplished by diode array detection from 200 to 500 nm. Absorbance maxima were found at 295 nm for tocopherols, 324 nm for gammaoryzanol, and 450 nm for carotenoids. Furthermore, compounds were characterized and identified on the basis of their UV-spectra. Both RP systems were coupled to MS (LC-MS) by using an atmospheric pressure chemical ionization interface.

Three phase power factor controller

NASA Technical Reports Server (NTRS)

Nola, F. J. (Inventor)

1984-01-01

A power control circuit for a three phase induction motor is described. Power factors for the three phases are summed to provide a control signal, and this control signal is particularly filtered and then employed to control the duty cycle of each phase of input power to the motor.

Determination of organophosphorus pesticides in bovine tissue by an on-line coupled matrix solid-phase dispersion-solid phase extraction-high performance liquid chromatography with diode array detection method.

PubMed

Gutiérrez Valencia, Tania M; García de Llasera, Martha P

2011-09-28

A miniaturized method based on matrix solid-phase dispersion coupled to solid phase extraction and high performance liquid chromatography with diode array detection (MSPD-SPE-HPLC/DAD) was developed for the trace simultaneous determination of the following organophosphorus pesticides (OPPs) in bovine tissue: parathion-methyl, fenitrothion, parathion, chlorfenvinphos, diazinon, ethion, fenchlorphos, chlorpyrifos and carbophenothion. To perform the coupling between MSPD and SPE, 0.05 g of sample was dispersed with 0.2 g of C(18) silica sorbent and packed into a stainless steel cartridge containing 0.05 g of silica gel in the bottom. After a clean-up of high and medium polarity interferences with water and an acetonitrile:water mixture, the OPPs were desorbed from the MSPD cartridge with pure acetonitrile and directly transferred to a dynamic mixing chamber for dilution with water and preconcentration into an SPE 20 mm × 2.0 mm I.D. C(18) silica column. Subsequently, the OPPs were eluted on-line with the chromatographic mobile phase to the analytical column and the diode array detector for their separation and detection, respectively. The method was validated and yielded recovery values between 91% and 101% and precision values, expressed as relative standard deviations (RSD), which were less than or equal to 12%. Linearity was good and ranged from 0.5 to 10 μg g(-1), and the limits of detection of the OPPs were in the range of 0.04-0.25 μg g(-1). The method was satisfactorily applied to the analysis of real samples and is recommended for food control, research efforts when sample amounts are limited, and laboratories that have ordinary chromatographic instrumentation. Copyright © 2011 Elsevier B.V. All rights reserved.

Coordinated single-phase control scheme for voltage unbalance reduction in low voltage network.

PubMed

Pullaguram, Deepak; Mishra, Sukumar; Senroy, Nilanjan

2017-08-13

Low voltage (LV) distribution systems are typically unbalanced in nature due to unbalanced loading and unsymmetrical line configuration. This situation is further aggravated by single-phase power injections. A coordinated control scheme is proposed for single-phase sources, to reduce voltage unbalance. A consensus-based coordination is achieved using a multi-agent system, where each agent estimates the averaged global voltage and current magnitudes of individual phases in the LV network. These estimated values are used to modify the reference power of individual single-phase sources, to ensure system-wide balanced voltages and proper power sharing among sources connected to the same phase. Further, the high X / R ratio of the filter, used in the inverter of the single-phase source, enables control of reactive power, to minimize voltage unbalance locally. The proposed scheme is validated by simulating a LV distribution network with multiple single-phase sources subjected to various perturbations.This article is part of the themed issue 'Energy management: flexibility, risk and optimization'. © 2017 The Author(s).

Bulk unipolar diodes formed in GaAs by ion implantation

NASA Astrophysics Data System (ADS)

Hutchinson, S.; Kelly, M. J.; Gwilliam, R.; Sealy, B. J.; Carr, M.

1999-01-01

In an attempt to emulate epitaxially manufactured semiconductor multilayers for microwave device applications, we have produced a camel diode structure in GaAs for the first time, using the tail of a Mg + implant into a molecular beam epitaxially grown n +-n --n + structure. Using a range of ion energies and doses, samples are observed to exhibit bulk unipolar diode characteristics. With low dose and energy, a diode with barrier height of ˜0.8 V and ideality factor ˜1.25 is achieved. 'Punch through' diode characteristics are obtained at high ion dose and energy, some with knee voltages in excess of 7 V.

Relative dosimetry with an MR-linac: Response of ion chambers, diamond, and diode detectors for off-axis, depth dose, and output factor measurements.

PubMed

O'Brien, Daniel J; Dolan, James; Pencea, Stefan; Schupp, Nicholas; Sawakuchi, Gabriel O

2018-02-01

The purpose of this study was to acquire beam data for an MR-linac, with and without a 1.5 T magnetic field, by using a variety of commercially available detectors to assess their relative response in the magnetic field. The impact of the magnetic field on the measured dose distribution was also assessed. An MR-safe 3D scanning water phantom was used to measure output factors, depth dose curves, and off-axis profiles for various depths and for field sizes between 2 × 2 cm 2 and 22 × 22 cm 2 for an Elekta MR-linac beam with the orthogonal 1.5 T magnetic field on or off. An on-board MV portal imaging system was used to ensure that the reproducibility of the detector position, both with and without the magnetic field, was within 0.1 mm. The detectors used included ionization chambers with large, medium, and small sensitive volumes; a diamond detector; a shielded diode; and an unshielded diode. The offset of the effective point of measurement of the ionization chambers was found to be reduced by at least half for each chamber in the direction parallel with the beam. A lateral shift of similar magnitude was also introduced to the chambers' effective point of measurement toward the average direction of the Lorentz force. A similar lateral shift (but in the opposite direction) was also observed for the diamond and diode detectors. The measured lateral shift in the dose distribution was independent of depth and field size for each detector for fields between 2 × 2 cm 2 and 10 × 10 cm 2 . The shielded diode significantly misrepresented the dose distribution in the lateral direction perpendicular to the magnetic field, making it seem more symmetric. The percentage depth dose was generally found to be lower with the magnetic field than without, but this difference was reduced as field size increased. The depth of maximum dose showed little dependence on field size in the presence of the magnetic field, with values from 1.2 cm to 1.3 cm between the 2�

A possible four-phase coexistence in a single-component system

NASA Astrophysics Data System (ADS)

Akahane, Kenji; Russo, John; Tanaka, Hajime

2016-08-01

For different phases to coexist in equilibrium at constant temperature T and pressure P, the condition of equal chemical potential μ must be satisfied. This condition dictates that, for a single-component system, the maximum number of phases that can coexist is three. Historically this is known as the Gibbs phase rule, and is one of the oldest and venerable rules of thermodynamics. Here we make use of the fact that, by varying model parameters, the Gibbs phase rule can be generalized so that four phases can coexist even in single-component systems. To systematically search for the quadruple point, we use a monoatomic system interacting with a Stillinger-Weber potential with variable tetrahedrality. Our study indicates that the quadruple point provides flexibility in controlling multiple equilibrium phases and may be realized in systems with tunable interactions, which are nowadays feasible in several soft matter systems such as patchy colloids.

Performances of anaerobic co-digestion of fruit & vegetable waste (FVW) and food waste (FW): single-phase vs. two-phase.

PubMed

Shen, Fei; Yuan, Hairong; Pang, Yunzhi; Chen, Shulin; Zhu, Baoning; Zou, Dexun; Liu, Yanping; Ma, Jingwei; Yu, Liang; Li, Xiujin

2013-09-01

The co-digestion of fruit & vegetable waste (FVW) and food waste (FW) was performed at various organic loading ratios (OLRs) in single-phase and two-phase system, respectively. The results showed that the ethanol-type fermentation dominated in both digestion processes when OLR was at low levels (<2.0 g(VS) L(-1) d(-1)). The propionic acid was rapidly accumulated as OLR was increased to higher levels (>2.0 g(VS) L(-1) d(-1)), which could cause unstable anaerobic digestion. Single-phase digestion was better than two-phase digestion in term of 4.1% increase in CH4 production at lower OLRs (<2.0 g(VS) L(-1) d(-1)). However, at higher level of OLR (≥2.0 g(VS) L(-1) d(-1)), two-phase digestion achieved higher CH4 production of 0.351-0.455 L(g VS)(-1) d(-1), which were 7.0-15.8% more than that of single-phase. Additionally, two-phase digestion presented more stable operation, and higher OLR treatment capacity. Furthermore, comparison of these two systems with bioenergy recovery revealed that two-phase system overall presented higher bioenergy yield than single-phase. Copyright © 2013 Elsevier Ltd. All rights reserved.

Fabrication of single phase 2D homologous perovskite microplates by mechanical exfoliation

NASA Astrophysics Data System (ADS)

Li, Junze; Wang, Jun; Zhang, Yingjun; Wang, Haizhen; Lin, Gaoming; Xiong, Xuan; Zhou, Weihang; Luo, Hongmei; Li, Dehui

2018-04-01

The two-dimensional (2D) Ruddlesden-Popper type perovskites have attracted intensive interest for their great environmental stability and various potential optoelectronic applications. Fundamental understanding of the photophysical and electronic properties of the 2D perovskites with pure single phase is essential for improving the performance of the optoelectronic devices and designing devices with new architectures. Investigating the optical and electronic properties of these materials with pure single phase is required to obtain pure single phase 2D perovskites. Here, we report on an alternative approach to fabricate (C4H9NH3)2(CH3NH3) n-1Pb n I3n+1 microplates with pure single n-number perovskite phase for n  >  2 by mechanical exfoliation. Micro-photoluminescence and absorption spectroscopy studies reveal that the as-synthesized 2D perovskite plates for n  >  2 are comprised by dominant n-number phase and small inclusions of hybrid perovskite phases with different n values, which is supported by excitation power dependent photoluminescence. By mechanical exfoliation method, 2D perovskite microplates with the thickness of around 20 nm are obtained, which surprisingly have single n-number perovskite phase for n  =  2-5. In addition, we have demonstrated that the exfoliated 2D perovskite microplates can be integrated with other 2D layered materials such as boron nitride, and are able to be transferred to prefabricated electrodes for photodetections. Our studies not only provide a strategy to prepare 2D perovskites with a single n-number perovskite phase allowing us to extract the basic optical and electronic parameters of pure phase perovskites, but also demonstrate the possibility to integrate the 2D perovskites with other 2D layered materials to extend the device’s functionalities.

Advancements of ultra-high peak power laser diode arrays

NASA Astrophysics Data System (ADS)

Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

2018-02-01

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Phase detector for three-phase power factor controller

NASA Technical Reports Server (NTRS)

Nola, F. J. (Inventor)

1984-01-01

A phase detector for the three phase power factor controller (PFC) is described. The phase detector for each phase includes an operational amplifier which senses the current phase angle for that phase by sensing the voltage across the phase thyristor. Common mode rejection is achieved by providing positive feedback between the input and output of the voltage sensing operational amplifier. this feedback preferably comprises a resistor connected between the output and input of the operational amplifier. The novelty of the invention resides in providing positive feedback such that switching of the operational amplifier is synchronized with switching of the voltage across the thyristor. The invention provides a solution to problems associated with high common mode voltage and enables use of lower cost components than would be required by other approaches.

C18 solid-phase isolation and high-performance liquid chromatography/ultraviolet diode array determination of fully methoxylated flavones in citrus juices.

PubMed

Sendra, J M; Navarro, J L; Izquierdo, L

1988-09-01

A new analytical methodology for the determination of fully methoxylated flavones (FMFs) in citrus juices is described. Isolation of the FMFs is carried out by percolation of 30 mL of clarified citrus juice (to which tetramethyl-o-kaempferol is previously added as internal standard) through a C18 Sep-Pak cartridge, washing with 3 mL of water followed by 5 mL of water/acetonitrile (3:1), and selective elution of the retained FMFs with 5 mL of water/acetonitrile (9:11). Determination of the isolated FMFs is carried out by reversed-phase high-performance liquid chromatography (HPLC) and UV diode array detection (DAD). Signals at wavelengths 320, 335, and 345 nm (bandwidth 4 nm) are simultaneously acquired, stored, plotted, and integrated. The column used is a microbore (200 x 2.1-mm) Hypersil ODS 5 microns. Elution is in gradient mode, using a ternary mobile phase (water/acetonitrile/tetrahydrofuran). Column temperature is 40 degrees C. Recovery yields are nearly 100% for all the FMFs detected and identified: isosinensetin, hexamethyl-o-gossypetin, sinensetin, tetramethyl-o-isoscutellarein, hexamethyl-o-quercetagetin, nobiletin, tetramethyl-o-scutellarein, heptamethoxyflavone, and tangeretin. Chromatographic separation of the FMFs is extremely dependent upon the minor changes of the mobile phase composition and percentages, gradient rate, and temperature. The UV spectra (230 to 400 nm) of the FMFs obtained under chromatographic conditions are given. The FMFs relative response factors at 320, 335, and 345 nm and their concentrations in hand-squeezed and commercial concentrated orange and mandarin juices are tabulated. The FMF concentration differences found among samples are discussed.

Gigahertz frequency comb from a diode-pumped solid-state laser.

PubMed

Klenner, Alexander; Schilt, Stéphane; Südmeyer, Thomas; Keller, Ursula

2014-12-15

We present the first stabilization of the frequency comb offset from a diode-pumped gigahertz solid-state laser oscillator. No additional external amplification and/or compression of the output pulses is required. The laser is reliably modelocked using a SESAM and is based on a diode-pumped Yb:CALGO gain crystal. It generates 1.7-W average output power and pulse durations as short as 64 fs at a pulse repetition rate of 1 GHz. We generate an octave-spanning supercontinuum in a highly nonlinear fiber and use the standard f-to-2f carrier-envelope offset (CEO) frequency f_CEO detection method. As a pump source, we use a reliable and cost-efficient commercial diode laser. Its multi-spatial-mode beam profile leads to a relatively broad frequency comb offset beat signal, which nevertheless can be phase-locked by feedback to its current. Using improved electronics, we reached a feedback-loop-bandwidth of up to 300 kHz. A combination of digital and analog electronics is used to achieve a tight phase-lock of f_CEO to an external microwave reference with a low in-loop residual integrated phase-noise of 744 mrad in an integration bandwidth of [1 Hz, 5 MHz]. An analysis of the laser noise and response functions is presented which gives detailed insights into the CEO stabilization of this frequency comb.

Radiation Tests of Single Photon Avalanche Diode for Space Applications

NASA Technical Reports Server (NTRS)

Moscatelli, Francesco; Marisaldi, Martino; MacCagnani, Piera; Labanti, Claudio; Fuschino, Fabio; Prest, Michela; Berra, Alessandro; Bolognini, Davide; Ghioni, Massimo; Rech, Ivan;

Optical properties of single and bilayer arsenene phases

NASA Astrophysics Data System (ADS)

Kecik, Deniz; Ciraci, Salim; Durgun, Engin

An extensive investigation of the optical properties of single-layer buckled and washboard arsenene and their bilayers was performed, starting from layered three-dimensional (3D) crystalline phase of arsenic using density functional and many-body perturbation theories combined with Random Phase Approximation. Electron-hole interactions were taken into account by solving the Bethe-Salpeter equation, suggesting first bound exciton energies on the order of 0.7 eV. Thus, many-body effects were found to be crucial for altering the optical properties of arsenene. The light absorption of single layer and bilayer arsenene structures in general falls within the visible-ultraviolet (UV) spectral regime. Moreover, directional anisotropy, varying the number of layers and applying homogeneous or uniaxial in-plane tensile strain were found to modify the optical properties of two-dimensional (2D) arsenene phases, which could be useful for diverse photovoltaic and optoelectronic applications. This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No 115F088.

Microstructural characteristics of σ phase and P phase in Ru-containing single crystal superalloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huo, Jiajie, E-mail: jiajiehuo0618@163.com

Microstructural instability caused by topologically close-packed (TCP) phase precipitation restricts the useful compositional range of advanced Ni-base single crystal superalloys in industrial applications. Limited systematic investigations of TCP formers (Cr and Mo) additions on microstructural evolution of both the σ phase and the P phase in Ru-containing single crystal superalloys have been reported. In this study, the microstructural characteristics of σ phase and P phase were investigated in three Ru-containing superalloys with different levels of Cr and Mo additions at 950 °C and 1100 °C by using phase extraction, X-ray diffraction, scanning electron microscope and high resolution transmission electron microscopy.more » The experimental results indicated that the high level additions of Cr and Mo promoted the formation of σ phase and P phase, respectively. The amount of σ phase was much higher than that of P phase after long term exposure at 950 °C and 1100 °C. The sheet-like σ phase existed in the alloy with higher Cr addition after thermal exposure at 950 °C and 1100 °C for 1000 h, while the needle-like P phase precipitated in high Mo content alloy after thermal exposure at 1100 °C for 1000 h and the intergrowth of σ phase and P phase was observed after thermal exposure at 950 °C for 500 h. Both the σ phase and P phase were enriched in Re, W, Cr and Mo, but the σ phase contained more Re and Cr while the P phase contained more Mo and Ni, and Ru was found in both phases. The nucleation of σ phase was much easier than P phase due to the more ledge steps in the interfacial structure between σ phase and matrix, as well as the higher partitioning ratios of Re, Cr and Mo. This study is helpful to understand the microstructural evolution of σ phase and P phase, and to optimize the alloy design in Ru-containing superalloys. - Highlights: •Microstructures of σ phase and P phase were characterized in detail. •Cr and Mo influenced the

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

PubMed

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Diode and Diode Circuits, a Programmed Text.

ERIC Educational Resources Information Center

Balabanian, Norman; Kirwin, Gerald J.

This programed text on diode and diode circuits was developed under contract with the United States Office of Education as Number 4 in a series of materials for use in an electrical engineering sequence. It is intended as a supplement to a regular text and other instructional material. (DH)

A possible four-phase coexistence in a single-component system

PubMed Central

Akahane, Kenji; Russo, John; Tanaka, Hajime

2016-01-01

For different phases to coexist in equilibrium at constant temperature T and pressure P, the condition of equal chemical potential μ must be satisfied. This condition dictates that, for a single-component system, the maximum number of phases that can coexist is three. Historically this is known as the Gibbs phase rule, and is one of the oldest and venerable rules of thermodynamics. Here we make use of the fact that, by varying model parameters, the Gibbs phase rule can be generalized so that four phases can coexist even in single-component systems. To systematically search for the quadruple point, we use a monoatomic system interacting with a Stillinger–Weber potential with variable tetrahedrality. Our study indicates that the quadruple point provides flexibility in controlling multiple equilibrium phases and may be realized in systems with tunable interactions, which are nowadays feasible in several soft matter systems such as patchy colloids. PMID:27558452

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz

2012-03-01

TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.

Criteria for predicting the formation of single-phase high-entropy alloys

DOE PAGES

Troparevsky, M Claudia; Morris, James R..; Kent, Paul R.; ...

2015-03-15

High entropy alloys constitute a new class of materials whose very existence poses fundamental questions. Originally thought to be stabilized by the large entropy of mixing, these alloys have attracted attention due to their potential applications, yet no model capable of robustly predicting which combinations of elements will form a single-phase currently exists. Here we propose a model that, through the use of high-throughput computation of the enthalpies of formation of binary compounds, is able to confirm all known high-entropy alloys while rejecting similar alloys that are known to form multiple phases. Despite the increasing entropy, our model predicts thatmore » the number of potential single-phase multicomponent alloys decreases with an increasing number of components: out of more than two million possible 7-component alloys considered, fewer than twenty single-phase alloys are likely.« less

Simulative research on the anode plasma dynamics in the high-power electron beam diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Dan; Liu, Lie; Ju, Jin-Chuan

2015-07-15

Anode plasma generated by electron beams could limit the electrical pulse-length, modify the impedance and stability of diode, and affect the generator to diode power coupling. In this paper, a particle-in-cell code is used to study the dynamics of anode plasma in the high-power electron beam diode. The effect of gas type, dynamic characteristic of ions on the diode operation with bipolar flow model are presented. With anode plasma appearing, the amplitude of diode current is increased due to charge neutralizations of electron flow. The lever of neutralization can be expressed using saturation factor. At same pressure of the anodemore » gas layer, the saturation factor of CO{sub 2} is bigger than the H{sub 2}O vapor, namely, the generation rate of C{sup +} ions is larger than the H{sup +} ions at the same pressure. The transition time of ions in the anode-cathode gap could be used to estimate the time of diode current maximum.« less

High performance Schottky diodes based on indium-gallium-zinc-oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk; Xin, Qian

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in themore » rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.« less

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Single-Receiver GPS Phase Bias Resolution

NASA Technical Reports Server (NTRS)

Bertiger, William I.; Haines, Bruce J.; Weiss, Jan P.; Harvey, Nathaniel E.

2010-01-01

Existing software has been modified to yield the benefits of integer fixed double-differenced GPS-phased ambiguities when processing data from a single GPS receiver with no access to any other GPS receiver data. When the double-differenced combination of phase biases can be fixed reliably, a significant improvement in solution accuracy is obtained. This innovation uses a large global set of GPS receivers (40 to 80 receivers) to solve for the GPS satellite orbits and clocks (along with any other parameters). In this process, integer ambiguities are fixed and information on the ambiguity constraints is saved. For each GPS transmitter/receiver pair, the process saves the arc start and stop times, the wide-lane average value for the arc, the standard deviation of the wide lane, and the dual-frequency phase bias after bias fixing for the arc. The second step of the process uses the orbit and clock information, the bias information from the global solution, and only data from the single receiver to resolve double-differenced phase combinations. It is called "resolved" instead of "fixed" because constraints are introduced into the problem with a finite data weight to better account for possible errors. A receiver in orbit has much shorter continuous passes of data than a receiver fixed to the Earth. The method has parameters to account for this. In particular, differences in drifting wide-lane values must be handled differently. The first step of the process is automated, using two JPL software sets, Longarc and Gipsy-Oasis. The resulting orbit/clock and bias information files are posted on anonymous ftp for use by any licensed Gipsy-Oasis user. The second step is implemented in the Gipsy-Oasis executable, gd2p.pl, which automates the entire process, including fetching the information from anonymous ftp

Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

NASA Astrophysics Data System (ADS)

Bai, Xianchen; Zhang, Jiande; Yang, Jianhua; Jin, Zhenxing

2012-12-01

Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of ˜22 MW, an output power of ˜230 MW with the power gain of ˜10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than ±15° in a single shot, and phase jitter of ±11° is obtained within a series of shots with duration of about 40 ns.

Single phase computed tomography is equivalent to dual phase method for localizing hyperfunctioning parathyroid glands in patients with primary hyperparathyroidism: a retrospective review

PubMed Central

Morón, Fanny; Delumpa, Alfred; Guffey, Danielle; Dunaway, David

2017-01-01

Objective This study aims to compare the sensitivity of dual phase (non-contrast and arterial) versus single phase (arterial) CT for detection of hyper-functioning parathyroid glands in patients with primary hyperparathyroidism. Methods The CT scans of thirty-two patients who have biochemical evidence of primary hyperparathyroidism, pathologically proven parathyroid adenomas, and pre-operative multiphase parathyroid imaging were evaluated retrospectively in order to compare the adequacy of single phase vs. dual phase CT scans for the detection of parathyroid adenomas. Results The parathyroid adenomas were localized in 83% of cases on single arterial phase CT and 80% of cases on dual phase CT. The specificity for localization of parathyroid tumor was 96% for single phase CT and 97% for dual phase CT. The results were not significantly different (p = 0.695). These results are similar to those found in the literature for multiphase CT of 55–94%. Conclusions Our study supports the use of a single arterial phase CT for the detection of hyperfunctioning parathyroid adenomas. Advances in knowledge: a single arterial phase CT has similar sensitivity for localizing parathyroid adenomas as dual phase CT and significantly reduces radiation dose to the patient. PMID:28828238

Improvement in reduced-mode (REM) diodes enable 315 W from 105-μm 0.15-NA fiber-coupled modules

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2018-02-01

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - and 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

High efficiency and broadband acoustic diodes

NASA Astrophysics Data System (ADS)

Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

2018-01-01

Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

[Determination of canthaxanthin and astaxanthin in egg yolks by reversed phase high performance liquid chromatography with diode array detection].

PubMed

He, Kang-Hao; Zou, Xiao-Li; Liu, Xiang; Zeng, Hong-Yan

2012-01-01

A method using reversed phase high performance liquid chromatography (RP-HPLC) coupled with diode array detector (DAD) was developed for the simultaneous determination of canthaxanthin and astaxanthin in egg yolks. Samples were extracted with acetonitrile in ultrasonic bath for 20 minutes and then purified by freezing-lipid filtration and solid phase extraction (SPE). After being vaporized to dryness by nitrogen blowing and made up to volume with methanol, the extract solution was chromatographically separated in C18 column with a unitary mobile phase consisting of acetonitrile. The proposed method was validated in terms of linearity, precision, accuracy, and limit of detection (LOD). Regression analysis revealed a good linearity between peak area of each analyte and its concentration (r > or = 0.998). The intra- and inter-day relative standard deviations (RSDs) were less than 3.6% and 5.2%, respectively. LODs of canthaxanthin and astaxanthin were 0.035 and 0.027 microg/mL (S/N = 3). The average recoveries of canthaxanthin and astaxanthin were 91.5% and 88.7%. The proposed method is simple, fast and easy to apply.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori; Tadano, Hiroshi

2014-01-01

Neutron-induced single-event burnouts (SEBs) of silicon carbide (SiC) power diodes have been investigated by white neutron irradiation experiments and transient device simulations. It was confirmed that a rapid increase in lattice temperature leads to formation of crown-shaped aluminum and cracks inside the device owing to expansion stress when the maximum lattice temperature reaches the sublimation temperature. SEB device simulation indicated that the peak lattice temperature is located in the vicinity of the n-/n+ interface and anode contact, and that the positions correspond to a hammock-like electric field distribution caused by the space charge effect. Moreover, the locations of the simulated peak lattice temperature agree closely with the positions of the observed destruction traces. Furthermore, it was theoretically demonstrated that the period of temperature increase of a SiC power device is two orders of magnitude less than that of a Si power device, using a thermal diffusion equation.

High-brightness tapered laser diodes with photonic crystal structures

NASA Astrophysics Data System (ADS)

Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

2018-02-01

Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

Does laser diode irradiation improve the degree of conversion of simplified dentin bonding systems?

PubMed

Brianezzi, Leticia Ferreira de Freitas; Maenosono, Rafael Massunari; Bim, Odair; Zabeu, Giovanna Speranza; Palma-Dibb, Regina Guenka; Ishikiriama, Sérgio Kiyoshi

2017-01-01

This study aimed to investigate the effect of laser diode irradiation on the degree of conversion (DC), water sorption (WS), and water solubility (WSB) of these bonding systems in an attempt to improve their physico-mechanical resistance. Two bonding agents were tested: a two-step total-etch system [Adper™ Single Bond 2, 3M ESPE (SB)] and a universal system [Adper™ Single Bond Universal, 3M ESPE (SU)]. Square-shaped specimens were prepared and assigned into 4 groups (n=5): SB and SU (control groups - no laser irradiation) and SB-L and SU-L [SB and SU laser (L) - irradiated groups]. DC was assessed using Fourier transform infrared spectroscopy with attenuated total reflectance. Additional uncured resin samples (≈3.0 µL, n=5) of each adhesive were also scanned for final DC calculation. For WS/WSB tests, similar specimens (n=10) were prepared and measured by monitoring the mass changes after dehydration/water storage cycles. For both tests, adhesive fluids were dropped into standardized Teflon molds (6.0×6.0×1.0 mm), irradiated with a 970-nm laser diode, and then polymerized with an LED-curing unit (1 W/cm2). Laser irradiation immediately before photopolymerization increased the DC (%) of the tested adhesives: SB-L>SB>SU-L>SU. For WS/WSB (μg/mm3), only the dentin bonding system (DBS) was a significant factor (p<0.05): SB>SU. Irradiation with a laser diode improved the degree of conversion of all tested simplified dentin bonding systems, with no impact on water sorption and solubility.

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

100 years of the physics of diodes

NASA Astrophysics Data System (ADS)

Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

2017-03-01

The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

Monte Carlo calculated correction factors for diodes and ion chambers in small photon fields.

PubMed

Czarnecki, D; Zink, K

2013-04-21

The application of small photon fields in modern radiotherapy requires the determination of total scatter factors Scp or field factors Ω(f(clin), f(msr))(Q(clin), Q(msr)) with high precision. Both quantities require the knowledge of the field-size-dependent and detector-dependent correction factor k(f(clin), f(msr))(Q(clin), Q(msr)). The aim of this study is the determination of the correction factor k(f(clin), f(msr))(Q(clin), Q(msr)) for different types of detectors in a clinical 6 MV photon beam of a Siemens KD linear accelerator. The EGSnrc Monte Carlo code was used to calculate the dose to water and the dose to different detectors to determine the field factor as well as the mentioned correction factor for different small square field sizes. Besides this, the mean water to air stopping power ratio as well as the ratio of the mean energy absorption coefficients for the relevant materials was calculated for different small field sizes. As the beam source, a Monte Carlo based model of a Siemens KD linear accelerator was used. The results show that in the case of ionization chambers the detector volume has the largest impact on the correction factor k(f(clin), f(msr))(Q(clin), Q(msr)); this perturbation may contribute up to 50% to the correction factor. Field-dependent changes in stopping-power ratios are negligible. The magnitude of k(f(clin), f(msr))(Q(clin), Q(msr)) is of the order of 1.2 at a field size of 1 × 1 cm(2) for the large volume ion chamber PTW31010 and is still in the range of 1.05-1.07 for the PinPoint chambers PTW31014 and PTW31016. For the diode detectors included in this study (PTW60016, PTW 60017), the correction factor deviates no more than 2% from unity in field sizes between 10 × 10 and 1 × 1 cm(2), but below this field size there is a steep decrease of k(f(clin), f(msr))(Q(clin), Q(msr)) below unity, i.e. a strong overestimation of dose. Besides the field size and detector dependence, the results reveal a clear dependence of the

Fibre-coupled red diode-pumped Alexandrite TEM00 laser with single and double-pass end-pumping

NASA Astrophysics Data System (ADS)

Arbabzadah, E. A.; Damzen, M. J.

2016-06-01

We report the investigation of an Alexandrite laser end-pumped by a fibre-coupled red diode laser module. Power, efficiency, spatial, spectral, and wavelength tuning performance are studied as a function of pump and laser cavity parameters. It is the first demonstration, to our knowledge, of greater than 1 W power and also highest laser slope efficiency (44.2%) in a diode-pumped Alexandrite laser with diffraction-limited TEM00 mode operation. Spatial quality was excellent with beam propagation parameter M 2 ~ 1.05. Wavelength tuning from 737-796 nm was demonstrated using an intracavity birefringent tuning filter. Using a novel double pass end-pumping scheme to get efficient absorption of both polarisation states of the scrambled fibre-delivered diode pump, a total output coupled power of 1.66 W is produced in TEM00 mode with 40% slope efficiency.

Development of a sensor for temperature and water concentration in combustion gases using a single tunable diode laser

NASA Astrophysics Data System (ADS)

Zhou, Xin; Liu, Xiang; Jeffries, Jay B.; Hanson, R. K.

2003-08-01

The water vapour spectrum in the 1-2 µm near-infrared region is systematically analysed to find the best absorption transitions for sensitive measurement of H2O concentration and temperature in combustion environments using a single tunable diode laser with typical distributed feedback single-mode scanning range (1 cm-1). The use of a single laser, even with relatively narrow tuning range, can offer distinct advantages over wavelength-multiplexing techniques. The strategy and spectroscopic criteria for selecting optimum wavelength regions and absorption line combinations are discussed. It should be stressed that no single figure of merit can be derived to simplify the selection process, and the optimum line pair should be chosen case by case. Our investigation reveals that the 1.8 µm spectral region is especially promising, and we have identified 10 of the best water line pairs in this spectral region for temperature measurements in flames. Based on these findings, a pair of H2O transitions near 1.8 µm was targeted for the design and development of an initial single-laser sensor for simultaneously measuring H2O concentration and temperature in atmospheric-pressure flames. As part of the sensor development effort, fundamental spectroscopic parameters including the line strength, line-centre frequency and lower state energies of the probed transitions were measured experimentally to improve the current databases. We conclude with demonstration results in a steady and a forced atmospheric-pressure laboratory combustor.

Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration.

PubMed

Sun, Pengfei; Ishihara, Ryoichi; Charbon, Edoardo

2016-02-22

We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD comprehensively and we extend this work to the first flexible SPAD image sensor with in-pixel and off-pixel electronics integrated in CMOS. Experimental results show that dark count rate (DCR) by band-to-band tunneling can be reduced by optimizing multiplication doping. DCR by trap-assisted avalanche, which is believed to be originated from the trench etching process, could be further reduced, resulting in a DCR density of tens to hundreds of Hertz per micrometer square at cryogenic temperature. The influence of the trench etching process onto DCR is also proved by comparison with planar ultrathin-body SPAD structures without trench. Photon detection probability (PDP) can be achieved by wider depletion and drift regions and by carefully optimizing body thickness. PDP in frontside- (FSI) and backside-illumination (BSI) are comparable, thus making this technology suitable for both modes of illumination. Afterpulsing and crosstalk are negligible at 2µs dead time, while it has been proved, for the first time, that a CMOS SPAD pixel of this kind could work in a cryogenic environment. By appropriate choice of substrate, this technology is amenable to implantation for biocompatible photon-counting applications and wherever bended imaging sensors are essential.

Microfluidic bead-based diodes with targeted circular microchannels for low Reynolds number applications.

PubMed

Sochol, Ryan D; Lu, Albert; Lei, Jonathan; Iwai, Kosuke; Lee, Luke P; Lin, Liwei

2014-05-07

Self-regulating fluidic components are critical to the advancement of microfluidic processors for chemical and biological applications, such as sample preparation on chip, point-of-care molecular diagnostics, and implantable drug delivery devices. Although researchers have developed a wide range of components to enable flow rectification in fluidic systems, engineering microfluidic diodes that function at the low Reynolds number (Re) flows and smaller scales of emerging micro/nanofluidic platforms has remained a considerable challenge. Recently, researchers have demonstrated microfluidic diodes that utilize high numbers of suspended microbeads as dynamic resistive elements; however, using spherical particles to block fluid flow through rectangular microchannels is inherently limited. To overcome this issue, here we present a single-layer microfluidic bead-based diode (18 μm in height) that uses a targeted circular-shaped microchannel for the docking of a single microbead (15 μm in diameter) to rectify fluid flow under low Re conditions. Three-dimensional simulations and experimental results revealed that adjusting the docking channel geometry and size to better match the suspended microbead greatly increased the diodicity (Di) performance. Arraying multiple bead-based diodes in parallel was found to adversely affect system efficacy, while arraying multiple diodes in series was observed to enhance device performance. In particular, systems consisting of four microfluidic bead-based diodes with targeted circular-shaped docking channels in series revealed average Di's ranging from 2.72 ± 0.41 to 10.21 ± 1.53 corresponding to Re varying from 0.1 to 0.6.

A single-mode external cavity diode laser using an intra-cavity atomic Faraday filter with short-term linewidth <400 kHz and long-term stability of <1 MHz.

PubMed

Keaveney, James; Hamlyn, William J; Adams, Charles S; Hughes, Ifan G

2016-09-01

We report on the development of a diode laser system - the "Faraday laser" - using an atomic Faraday filter as the frequency-selective element. In contrast to typical external-cavity diode laser systems which offer tunable output frequency but require additional control systems in order to achieve a stable output frequency, our system only lases at a single frequency, set by the peak transmission frequency of the internal atomic Faraday filter. Our system has both short-term and long-term stability of less than 1 MHz, which is less than the natural linewidth of alkali-atomic D-lines, making similar systems suitable for use as a "turn-key" solution for laser-cooling experiments.

Total robotic radical rectal resection with da Vinci Xi system: single docking, single phase technique.

PubMed

Tamhankar, Anup Sunil; Jatal, Sudhir; Saklani, Avanish

2016-12-01

This study aims to assess the advantages of Da Vinci Xi system in rectal cancer surgery. It also assesses the initial oncological outcomes after rectal resection with this system from a tertiary cancer center in India. Robotic rectal surgery has distinct advantages over laparoscopy. Total robotic resection is increasing following the evolution of hybrid technology. The latest Da Vinci Xi system (Intuitive Surgical, Sunnyvale, USA) is enabled with newer features to make total robotic resection possible with single docking and single phase. Thirty-six patients underwent total robotic resection in a single phase and single docking. We used newer port positions in a straight line. Median distance from the anal verge was 4.5 cm. Median robotic docking time and robotic procedure time were 9 and 280 min, respectively. Median blood loss was 100 mL. One patient needed conversion to an open approach due to advanced disease. Circumferential resection margin and longitudinal resection margins were uninvolved in all other patients. Median lymph node yield was 10. Median post-operative stay was 7 days. There were no intra-operative adverse events. The latest Da Vinci Xi system has made total robotic rectal surgery feasible in single docking and single phase. With the new system, four arm total robotic rectal surgery may replace the hybrid technique of laparoscopic and robotic surgery for rectal malignancies. The learning curve for the new system appears to be shorter than anticipated. Early perioperative and oncological outcomes of total robotic rectal surgery with the new system are promising. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Direct diode lasers and their advantages for materials processing and other applications

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of <10μs and repetition rates can be adjusted continuously from several kHz up to cw mode while addressing power levels from 0-100%. By combining trigger signals with analog modulations nearly any kind of pulse form can be realized. Diode lasers also offer a wide, adaptable range of wavelengths, and wavelength stabilization. We report a line width of less than 0.1nm while the wavelength stability is in the range of MHz which is comparable to solid state lasers. In terms of applications, especially our (broad) wavelength

High-Power Broad-Area Diode Lasers and Laser Bars

NASA Astrophysics Data System (ADS)

Erbert, Goetz; Baerwolff, Arthur; Sebastian, Juergen; Tomm, Jens

This review presents the basic ideas and some examples of the chip technology of high-power diode lasers ( λ= 650,-1060,) in connection with the achievements of mounted single-stripe emitters in recent years.In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.

Iodine-frequency-stabilized laser diode and displacement-measuring interferometer based on sinusoidal phase modulation

NASA Astrophysics Data System (ADS)

Duong, Quang Anh; Vu, Thanh Tung; Higuchi, Masato; Wei, Dong; Aketagawa, Masato

2018-06-01

We propose a sinusoidal phase modulation method to achieve both the frequency stabilization of an external-cavity laser diode (ECLD) to an 127I2 saturated absorption transition near 633 nm and displacement measurement using a Mach–Zehnder interferometer. First, the frequency of the ECLD is stabilized to the b 21 hyperfine component of the P(33) 6-3 transition of 127I2 by combining sinusoidal phase modulation by an electro-optic modulator and frequency modulation spectroscopy by chopping the pump beam using an acousto-optic modulator. Even though a small modulation index of m  =  3.768 rad is utilized, a relative frequency stability of 10‑11 order is obtained over a sampling time of 400 s. Secondly, the frequency-stabilized ECLD is applied as a light source to a Mach–Zehnder interferometer. From the two consecutive modulation harmonics (second and third orders) involved in the interferometer signal, the displacement of the moving mirror is determined for four optical path differences (L 0  =  100, 200, 500, and 1000 mm). The measured modulation indexes for the four optical path differences coincide with the designated value (3.768 rad) within 0.5%. Compared with the sinusoidal frequency modulation Michelson interferometer (Vu et al 2016 Meas. Sci. Technol. 27 105201) which was demonstrated by some of the same authors of this paper, the phase modulation Mach–Zhender interferometer could fix the modulation index to a constant value for the four optical path differences. In this report, we discuss the measurement principle, experimental system, and results.

Investigation of mode partition noise in Fabry-Perot laser diode

NASA Astrophysics Data System (ADS)

Guo, Qingyi; Deng, Lanxin; Mu, Jianwei; Li, Xun; Huang, Wei-Ping

2014-09-01

Passive optical network (PON) is considered as the most appealing access network architecture in terms of cost-effectiveness, bandwidth management flexibility, scalability and durability. And to further reduce the cost per subscriber, a Fabry-Perot (FP) laser diode is preferred as the transmitter at the optical network units (ONUs) because of its lower cost compared to distributed feedback (DFB) laser diode. However, the mode partition noise (MPN) associated with the multi-longitudinal-mode FP laser diode becomes the limiting factor in the network. This paper studies the MPN characteristics of the FP laser diode using the time-domain simulation of noise-driven multi-mode laser rate equation. The probability density functions are calculated for each longitudinal mode. The paper focuses on the investigation of the k-factor, which is a simple yet important measure of the noise power, but is usually taken as a fitted or assumed value in the penalty calculations. In this paper, the sources of the k-factor are studied with simulation, including the intrinsic source of the laser Langevin noise, and the extrinsic source of the bit pattern. The photon waveforms are shown under four simulation conditions for regular or random bit pattern, and with or without Langevin noise. The k-factors contributed by those sources are studied with a variety of bias current and modulation current. Simulation results are illustrated in figures, and show that the contribution of Langevin noise to the k-factor is larger than that of the random bit pattern, and is more dominant at lower bias current or higher modulation current.

A single-phase elastic hyperbolic metamaterial with anisotropic mass density.

PubMed

Zhu, R; Chen, Y Y; Wang, Y S; Hu, G K; Huang, G L

2016-06-01

Wave propagation can be manipulated at a deep subwavelength scale through the locally resonant metamaterial that possesses unusual effective material properties. Hyperlens due to metamaterial's anomalous anisotropy can lead to superior-resolution imaging. In this paper, a single-phase elastic metamaterial with strongly anisotropic effective mass density has been designed. The proposed metamaterial utilizes the independently adjustable locally resonant motions of the subwavelength-scale microstructures along the two principal directions. High anisotropy in the effective mass densities obtained by the numerical-based effective medium theory can be found and even have opposite signs. For practical applications, shunted piezoelectric elements are introduced into the microstructure to tailor the effective mass density in a broad frequency range. Finally, to validate the design, an elastic hyperlens made of the single-phase hyperbolic metamaterial is proposed with subwavelength longitudinal wave imaging illustrated numerically. The proposed single-phase hyperbolic metamaterial has many promising applications for high resolution damage imaging in nondestructive evaluation and structural health monitoring.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

PubMed

Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-11-05

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

PubMed Central

Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

2013-01-01

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

Monitoring gas-phase CO2 in the headspace of champagne glasses through combined diode laser spectrometry and micro-gas chromatography analysis.

PubMed

Moriaux, Anne-Laure; Vallon, Raphaël; Parvitte, Bertrand; Zeninari, Virginie; Liger-Belair, Gérard; Cilindre, Clara

2018-10-30

During Champagne or sparkling wine tasting, gas-phase CO 2 and volatile organic compounds invade the headspace above glasses, thus progressively modifying the chemical space perceived by the consumer. Gas-phase CO 2 in excess can even cause a very unpleasant tingling sensation perturbing both ortho- and retronasal olfactory perception. Monitoring as accurately as possible the level of gas-phase CO 2 above glasses is therefore a challenge of importance aimed at better understanding the close relationship between the release of CO 2 and a collection of various tasting parameters. Here, the concentration of CO 2 found in the headspace of champagne glasses served under multivariate conditions was accurately monitored, all along the 10 min following pouring, through a new combined approach by a CO 2 -Diode Laser Sensor and micro-gas chromatography. Our results show the strong impact of various tasting conditions (volume dispensed, intensity of effervescence, and glass shape) on the release of gas-phase CO 2 above the champagne surface. Copyright © 2018 Elsevier Ltd. All rights reserved.

Reducing Electromagnetic Interference in a Grid Tied Single Phase Power Inverter

DTIC Science & Technology

2016-09-01

ELECTROMAGNETIC INTERFERENCE IN A GRID TIED SINGLE PHASE POWER INVERTER by Jason Hassan Valiani September 2016 Thesis Advisor: Giovanna Oriti...3. REPORT TYPE AND DATES COVERED Master’s thesis 4. TITLE AND SUBTITLE REDUCING ELECTROMAGNETIC INTERFERENCE IN A GRID TIED SINGLE PHASE POWER...explored. The primary goal is to understand the effects each modulation strategy has on the conducted electromagnetic interference (EMI) and then

Highly efficient router-based readout algorithm for single-photon-avalanche-diode imagers for time-correlated experiments

NASA Astrophysics Data System (ADS)

Cominelli, A.; Acconcia, G.; Caldi, F.; Peronio, P.; Ghioni, M.; Rech, I.

2018-02-01

Time-Correlated Single Photon Counting (TCSPC) is a powerful tool that permits to record extremely fast optical signals with a precision down to few picoseconds. On the other hand, it is recognized as a relatively slow technique, especially when a large time-resolved image is acquired exploiting a single acquisition channel and a scanning system. During the last years, much effort has been made towards the parallelization of many acquisition and conversion chains. In particular, the exploitation of Single-Photon Avalanche Diodes in standard CMOS technology has paved the way to the integration of thousands of independent channels on the same chip. Unfortunately, the presence of a large number of detectors can give rise to a huge rate of events, which can easily lead to the saturation of the transfer rate toward the elaboration unit. As a result, a smart readout approach is needed to guarantee an efficient exploitation of the limited transfer bandwidth. We recently introduced a novel readout architecture, aimed at maximizing the counting efficiency of the system in typical TCSPC measurements. It features a limited number of high-performance converters, which are shared with a much larger array, while a smart routing logic provides a dynamic multiplexing between the two parts. Here we propose a novel routing algorithm, which exploits standard digital gates distributed among a large 32x32 array to ensure a dynamic connection between detectors and external time-measurement circuits.

Commissioning a p-type silicon diode for use in clinical electron beams.

PubMed

Eveling, J N; Morgan, A M; Pitchford, W G

1999-01-01

Commissioning measurements were carried out on a p-type silicon diode detector for use in patient monitoring in high energy electron beams. Characteristics specific to the diode were examined. The variation in diode sensitivity with dose per pulse was found to be less than 1% over a range 0.069-0.237 mGy/pulse. The diode exhibited a sensitivity variation with accumulated dose of 10% per kGy and a sensitivity variation with surface temperature of 0.26%/degree C. The dependence of the diode response on the direction of the incident electron beam was investigated. Results were found to exceed the manufacturer's specifications. Output factors measured with the diode agree to within 1.5% of those measured with an NACP-02 air ionization chamber. The detector showed a variation in response with energy of 0.8% over the energy range 4-15 MeV. Prior to introducing the diode into clinical use, an assessment of beam perturbation directly behind the diode was made. The maximum reduction in local dose directly behind the diode at a depth of 1.0 cm below the surface was approximately 13% at 4 and 15 MeV.

Fin-line PIN-diode attenuators and switches for 94 GHz range

NASA Astrophysics Data System (ADS)

Meinel, H.; Callsen, H.

1982-06-01

The letter reports new results of fin-line PIN-diode attenuators and switches for the 94 GHz range. Design and performance of SPST and SPDT switches - single pole single throw and single pole double throw, respectively - will be presented. The attenuation of the SPST switch, for example, can be adjusted between 2 and 35 dB over the entire waveguide band from 75 to 110 GHz.

High-efficiency integrated readout circuit for single photon avalanche diode arrays in fluorescence lifetime imaging.

PubMed

Acconcia, G; Cominelli, A; Rech, I; Ghioni, M

2016-11-01

In recent years, lifetime measurements by means of the Time Correlated Single Photon Counting (TCSPC) technique have led to a significant breakthrough in medical and biological fields. Unfortunately, the many advantages of TCSPC-based approaches come along with the major drawback of a relatively long acquisition time. The exploitation of multiple channels in parallel could in principle mitigate this issue, and at the same time it opens the way to a multi-parameter analysis of the optical signals, e.g., as a function of wavelength or spatial coordinates. The TCSPC multichannel solutions proposed so far, though, suffer from a tradeoff between number of channels and performance, and the overall measurement speed has not been increased according to the number of channels, thus reducing the advantages of having a multichannel system. In this paper, we present a novel readout architecture for bi-dimensional, high-density Single Photon Avalanche Diode (SPAD) arrays, specifically designed to maximize the throughput of the whole system and able to guarantee an efficient use of resources. The core of the system is a routing logic that can provide a dynamic connection between a large number of SPAD detectors and a much lower number of high-performance acquisition channels. A key feature of our smart router is its ability to guarantee high efficiency under any operating condition.

Antibacterial Effect of Diode Laser in Pulpectomy of Primary Teeth.

PubMed

Bahrololoomi, Zahra; Fekrazad, Reza; Zamaninejad, Shiva

2017-01-01

Introduction: Laser irradiation has been suggested as an adjunct to traditional methods of canal preparation but few studies are available on the antibacterial effect of diode laser in pulpectomy of primary teeth. The purpose of the present study is to investigate the antibacterial effect of diode laser in pulpectomy of primary teeth, in addition to define the optimal and harmless diode lasing conditions in the root canal. Methods: A total of 125 single rooted primary teeth were selected. After traditional canal cleaning, they were divided in 2 groups. Sixty-five specimens after culturing of Enterococcus faecalis into the canals, were divided in 3 groups: (1) traditional canal cleaning with 0.5% NaOCl irrigation, (2) method of group 1+ 1.5 W diode laser (980 nm, pulse), (3) without treatment (5 specimens). Then the specimens were cultured and after colony counting under light microscope, were statistically analyzed by Kruskal-Wallis and Mann-Whitney tests. For 60 specimens, temperature rise of apical and cervical parts of the external root surface were measured using 2 thermocouple type K, when radiating a 1.5 W diode laser into the canal. Results: In the first experiment, the diode laser group showed tmost reduction in bacterial count. And in the second experiment, the mean temperature rise of external root surface was less than the threshold of periodontal ligament (PDL) damage. Conclusion: Diode laser with a power output of 1.5 W, is effective in reduction of E. faecalis bacterial count without damaging periodontal structures.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charles, P. H., E-mail: paulcharles111@gmail.com; Cranmer-Sargison, G.; Thwaites, D. I.

2014-10-15

Purpose: Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods: Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was tomore » design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}}) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}} measured using an IBA stereotactic field diode (SFD). k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

PubMed Central

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-01-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W. PMID:27811994

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals.

PubMed

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-04

The spectral properties and laser performance of Er:SrF 2 single crystals were investigated and compared with Er:CaF 2 . Er:SrF 2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er 3+ : 4 I 11/2 level) than those of Er:CaF 2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF 2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF 2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

NASA Astrophysics Data System (ADS)

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers

NASA Astrophysics Data System (ADS)

Rieprich, J.; Winterfeldt, M.; Tomm, J.; Kernke, R.; Crump, P.

2017-02-01

The lateral beam parameter product, BPPlat, and resulting lateral brightness of GaAs-based high-power broad-area diode lasers is strongly influenced by the thermal lens profile. We present latest progress in efforts using FEM simulation to interpret how variation in chip construction influences the thermal lens profile, itself determined experimentally using thermography (thermal camera). Important factors are shown to include the vertical (epitaxial) structure, the properties of the submount and the transition between chip and submount, whose behavior is shown to be consistent with the presence of a significant thermal barrier.

100-W 105-μm 0.15NA fiber coupled laser diode module

NASA Astrophysics Data System (ADS)

Karlsen, Scott R.; Price, R. Kirk; Reynolds, Mitch; Brown, Aaron; Mehl, Ron; Patterson, Steve; Martinsen, Robert J.

2009-02-01

We report on the development of a high brightness laser diode module capable of coupling over 100W of optical power into a 105 μm 0.15 NA fiber at 976 nm. This module, based on nLIGHT's Pearl product architecture, utilizes hard soldered single emitters packaged into a compact and passively-cooled package. In this system each diode is individually collimated in the fast and slow axes and free-space coupled into a single fiber. The high brightness module has an optical excitation under 0.13 NA, is virtually free of cladding modes, and has an electrical to optical efficiency greater than 40%. Additionally, this module is compatible with high power 7:1 fused fiber combiners, and initial experiments demonstrated 500W coupled into a 220 μm, 0.22 NA fiber. These modules address the need in the market for higher brightness diode lasers for pumping fiber lasers and direct material processing.

Deterministic nonlinear phase gates induced by a single qubit

NASA Astrophysics Data System (ADS)

Park, Kimin; Marek, Petr; Filip, Radim

2018-05-01

We propose deterministic realizations of nonlinear phase gates by repeating a finite sequence of non-commuting Rabi interactions between a harmonic oscillator and only a single two-level ancillary qubit. We show explicitly that the key nonclassical features of the ideal cubic phase gate and the quartic phase gate are generated in the harmonic oscillator faithfully by our method. We numerically analyzed the performance of our scheme under realistic imperfections of the oscillator and the two-level system. The methodology is extended further to higher-order nonlinear phase gates. This theoretical proposal completes the set of operations required for continuous-variable quantum computation.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

PubMed

Lee, Byeong Ryong; Kim, Tae Geun

2017-01-01

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

PubMed

Lee, Byeong Ryong; Kim, Tae Geun

2016-06-01

This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Quantum thermal diode based on two interacting spinlike systems under different excitations.

PubMed

Ordonez-Miranda, Jose; Ezzahri, Younès; Joulain, Karl

2017-02-01

We demonstrate that two interacting spinlike systems characterized by different excitation frequencies and coupled to a thermal bath each, can be used as a quantum thermal diode capable of efficiently rectifying the heat current. This is done by deriving analytical expressions for both the heat current and rectification factor of the diode, based on the solution of a master equation for the density matrix. Higher rectification factors are obtained for lower heat currents, whose magnitude takes their maximum values for a given interaction coupling proportional to the temperature of the hotter thermal bath. It is shown that the rectification ability of the diode increases with the excitation frequencies difference, which drives the asymmetry of the heat current, when the temperatures of the thermal baths are inverted. Furthermore, explicit conditions for the optimization of the rectification factor and heat current are explicitly found.

Interface state density of free-standing GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Ashraf, H.; Imran Arshad, M.; Hageman, P. R.; Asghar, M.; Wahab, Q.

2010-09-01

Schottky diodes were fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types. Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au, respectively. The Schottky diode fabricated on n-GaN exhibited double barriers with values of 0.9 and 0.6 eV and better performance in the rectification factor together with reverse and forward currents with an ideality factor of 1.8. The barrier height for the p-GaN Schottky diode is 0.6 eV with an ideality factor of 4.16. From the capacitance-voltage (C-V) measurement, the net doping concentration of n-GaN is 4 × 1017 cm-3, resulting in a lower reverse breakdown of around -12 V. The interface state density (NSS) as a function of EC-ESS is found to be in the range 4.23 × 1012-3.87 × 1011 eV-1 cm-2 (below the conduction band) from Ec-0.90 to EC-0.99. Possible reasons responsible for the low barrier height and high ideality factor have been addressed.

Frequency chirped light at large detuning with an injection-locked diode laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teng, K.; Disla, M.; Dellatto, J.

2015-04-15

We have developed a laser system to generate frequency-chirped light at rapid modulation speeds (∼100 MHz) with a large frequency offset. Light from an external cavity diode laser with its frequency locked to an atomic resonance is passed through a lithium niobate electro-optical phase modulator. The phase modulator is driven by a ∼6 GHz signal whose frequency is itself modulated with a RF MHz signal (<200 MHz). A second injection locked diode laser is used to filter out all of the light except the frequency-chirped ±1 order by more than 30 dB. Using this system, it is possible to generatemore » a 1 GHz frequency chirp in 5 ns.« less

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

PubMed

Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

2015-05-06

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

Development of a fast temperature sensor for combustion gases using a single tunable diode laser

NASA Astrophysics Data System (ADS)

Zhou, X.; Jeffries, J. B.; Hanson, R. K.

2005-09-01

The 12 best NIR water transition line pairs for temperature measurements with a single DFB laser in flames are determined by systematic analysis of the HITRAN simulation of the water spectra in the 1-2 μm spectral region. A specific line pair near 1.4 μm was targeted for non-intrusive measurements of gas temperature in combustion systems using a scanned-wavelength technique with wavelength modulation and 2f detection. This sensor uses a single diode laser (distributed-feedback), operating near 1.4 μm and is wavelength scanned over a pair of H2O absorption transitions (7154.354 cm-1 & 7153.748 cm-1) at a 2 kHz repetition rate. The wavelength is modulated (f=500 kHz) with modulation amplitude a=0.056 cm-1. Gas temperature is inferred from the ratio of the second harmonic signals of the two selected H2O transitions. The fiber-coupled-single-laser design makes the system compact, rugged, low cost and simple to assemble. As part of the sensor development effort, design rules were applied to optimize the line selection, and fundamental spectroscopic parameters of the selected transitions were determined via laboratory measurements including the temperature-dependent line strength, self-broadening coefficients, and air-broadening coefficients. The new sensor design includes considerations of hardware and software to enable fast data acquisition and analysis; a temperature readout rate of 2 kHz was demonstrated for measurements in a laboratory flame at atmospheric pressure. The combination of scanned-wavelength and wavelength-modulation minimizes interference from emission and beam steering, resulting in a robust temperature sensor that is promising for combustion control applications.

A single factor underlies the metabolic syndrome: a confirmatory factor analysis.

PubMed

Pladevall, Manel; Singal, Bonita; Williams, L Keoki; Brotons, Carlos; Guyer, Heidi; Sadurni, Josep; Falces, Carles; Serrano-Rios, Manuel; Gabriel, Rafael; Shaw, Jonathan E; Zimmet, Paul Z; Haffner, Steven

2006-01-01

Confirmatory factor analysis (CFA) was used to test the hypothesis that the components of the metabolic syndrome are manifestations of a single common factor. Three different datasets were used to test and validate the model. The Spanish and Mauritian studies included 207 men and 203 women and 1,411 men and 1,650 women, respectively. A third analytical dataset including 847 men was obtained from a previously published CFA of a U.S. population. The one-factor model included the metabolic syndrome core components (central obesity, insulin resistance, blood pressure, and lipid measurements). We also tested an expanded one-factor model that included uric acid and leptin levels. Finally, we used CFA to compare the goodness of fit of one-factor models with the fit of two previously published four-factor models. The simplest one-factor model showed the best goodness-of-fit indexes (comparative fit index 1, root mean-square error of approximation 0.00). Comparisons of one-factor with four-factor models in the three datasets favored the one-factor model structure. The selection of variables to represent the different metabolic syndrome components and model specification explained why previous exploratory and confirmatory factor analysis, respectively, failed to identify a single factor for the metabolic syndrome. These analyses support the current clinical definition of the metabolic syndrome, as well as the existence of a single factor that links all of the core components.

Multiband Photonic Phased-Array Antenna

NASA Technical Reports Server (NTRS)

Tang, Suning

2015-01-01

A multiband phased-array antenna (PAA) can reduce the number of antennas on shipboard platforms while offering significantly improved performance. Crystal Research, Inc., has developed a multiband photonic antenna that is based on a high-speed, optical, true-time-delay beamformer. It is capable of simultaneously steering multiple independent radio frequency (RF) beams in less than 1,000 nanoseconds. This high steering speed is 3 orders of magnitude faster than any existing optical beamformer. Unlike other approaches, this technology uses a single controlling device per operation band, eliminating the need for massive optical switches, laser diodes, and fiber Bragg gratings. More importantly, only one beamformer is needed for all antenna elements.

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, John P.

1994-01-01

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, J.P.

1994-06-07

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers.

PubMed

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-01-17

Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2-values of the laser with lowest spatial coherence. The principle of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future.

Gun muzzle flash detection using a CMOS single photon avalanche diode

NASA Astrophysics Data System (ADS)

Merhav, Tomer; Savuskan, Vitali; Nemirovsky, Yael

2013-10-01

Si based sensors, in particular CMOS Image sensors, have revolutionized low cost imaging systems but to date have hardly been considered as possible candidates for gun muzzle flash detection, due to performance limitations, and low SNR in the visible spectrum. In this study, a CMOS Single Photon Avalanche Diode (SPAD) module is used to record and sample muzzle flash events in the visible spectrum, from representative weapons, common on the modern battlefield. SPADs possess two crucial properties for muzzle flash imaging - Namely, very high photon detection sensitivity, coupled with a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. This enables high sampling frequencies in the kilohertz range without SNR degradation, in contrast to regular CMOS image sensors. To date, the SPAD has not been utilized for flash detection in an uncontrolled environment, such as gun muzzle flash detection. Gun propellant manufacturers use alkali salts to suppress secondary flashes ignited during the muzzle flash event. Common alkali salts are compounds based on Potassium or Sodium, with spectral emission lines around 769nm and 589nm, respectively. A narrow band filter around the Potassium emission doublet is used in this study to favor the muzzle flash signal over solar radiation. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength under the specified imaging conditions. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics.

Single-exposure quantitative phase imaging in color-coded LED microscopy.

PubMed

Lee, Wonchan; Jung, Daeseong; Ryu, Suho; Joo, Chulmin

2017-04-03

We demonstrate single-shot quantitative phase imaging (QPI) in a platform of color-coded LED microscopy (cLEDscope). The light source in a conventional microscope is replaced by a circular LED pattern that is trisected into subregions with equal area, assigned to red, green, and blue colors. Image acquisition with a color image sensor and subsequent computation based on weak object transfer functions allow for the QPI of a transparent specimen. We also provide a correction method for color-leakage, which may be encountered in implementing our method with consumer-grade LEDs and image sensors. Most commercially available LEDs and image sensors do not provide spectrally isolated emissions and pixel responses, generating significant error in phase estimation in our method. We describe the correction scheme for this color-leakage issue, and demonstrate improved phase measurement accuracy. The computational model and single-exposure QPI capability of our method are presented by showing images of calibrated phase samples and cellular specimens.

Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

NASA Astrophysics Data System (ADS)

Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Hennig, P.

2007-02-01

There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 μs, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.

External cavity diode laser setup with two interference filters

NASA Astrophysics Data System (ADS)

Martin, Alexander; Baus, Patrick; Birkl, Gerhard

2016-12-01

We present an external cavity diode laser setup using two identical, commercially available interference filters operated in the blue wavelength range around 450 nm. The combination of the two filters decreases the transmission width, while increasing the edge steepness without a significant reduction in peak transmittance. Due to the broad spectral transmission of these interference filters compared to the internal mode spacing of blue laser diodes, an additional locking scheme, based on Hänsch-Couillaud locking to a cavity, has been added to improve the stability. The laser is stabilized to a line in the tellurium spectrum via saturation spectroscopy, and single-frequency operation for a duration of two days is demonstrated by monitoring the error signal of the lock and the piezo drive compensating the length change of the external resonator due to air pressure variations. Additionally, transmission curves of the filters and the spectra of a sample of diodes are given.

Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai Xianchen; Zhang Jiande; Yang Jianhua

2012-12-15

Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of themore » WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.« less

Neurotrophic keratitis after transscleral diode laser cyclophotocoagulation.

PubMed

Fernández-Vega González, Á; Barraquer Compte, R I; Cárcamo Martínez, A L; Torrico Delgadillo, M; de la Paz, M F

2016-07-01

To study the relationship between treatment with diode laser transscleral cyclophotocoagulation and development a neurotrophic keratitis due to the damage of the sensitive corneal innervation. A study was conducted on 5 eyes of 5 patients who were treated with diode laser transscleral cyclophotocoagulation and soon developed neurotrophic ulcers. Personal characteristics of the patients were collected, as well as refraction and risk factors for corneal hypoesthesia, and the parameters of the laser used in the surgery. It was found that the 5 patients had predisposing factors of corneal hypoesthesia prior to surgery (chronic use of topical beta blockers, surgery with corneal incisions, diabetes mellitus, or corneal dystrophies); however none had developed neurotrophic keratitis until the cyclophotocoagulation was performed. It also showed that 4 of them were highly myopic, and they all were treated with high laser parameters (with an average of 2880 mW for 3s at an average surface of 275°), triggering neurotrophic ulcers between 10 and 35 days after surgery. Neurotrophic keratitis is a rare complication that can occur after diode laser transscleral cyclophotocoagulation, secondary to the damage of the long ciliary nerves. The emergence of this disorder can be triggered by the existence of previous risk factors, including high myopia, thus it is important to respect the recommended treatment parameters to prevent the development of this disorder. Copyright © 2015 Sociedad Española de Oftalmología. Published by Elsevier España, S.L.U. All rights reserved.

Perovskite–fullerene hybrid materials suppress hysteresis in planar diodes

PubMed Central

Xu, Jixian; Buin, Andrei; Ip, Alexander H.; Li, Wei; Voznyy, Oleksandr; Comin, Riccardo; Yuan, Mingjian; Jeon, Seokmin; Ning, Zhijun; McDowell, Jeffrey J.; Kanjanaboos, Pongsakorn; Sun, Jon-Paul; Lan, Xinzheng; Quan, Li Na; Kim, Dong Ha; Hill, Ian G.; Maksymovych, Peter; Sargent, Edward H.

2015-01-01

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3− antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour. PMID:25953105

Perovskite-fullerene hybrid materials suppress hysteresis in planar diodes

NASA Astrophysics Data System (ADS)

Xu, Jixian; Buin, Andrei; Ip, Alexander H.; Li, Wei; Voznyy, Oleksandr; Comin, Riccardo; Yuan, Mingjian; Jeon, Seokmin; Ning, Zhijun; McDowell, Jeffrey J.; Kanjanaboos, Pongsakorn; Sun, Jon-Paul; Lan, Xinzheng; Quan, Li Na; Kim, Dong Ha; Hill, Ian G.; Maksymovych, Peter; Sargent, Edward H.

2015-05-01

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite-PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3- antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.

Perovskite-Fullerene Hybrid Materials Eliminate Hysteresis In Planar Diodes

DOE PAGES

Xu, Jixian; Buin, Andrei; Ip, Alexander H.; ...

2015-03-31

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3 antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solarmore » cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.« less

Frequency locking of compact laser-diode modules at 633 nm

NASA Astrophysics Data System (ADS)

Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

2018-02-01

This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

NASA Technical Reports Server (NTRS)

Picone, S.; Cho, Y.; Asmus, J. R.

1984-01-01

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.

Efficient thermal diode with ballistic spacer

NASA Astrophysics Data System (ADS)

Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio

2018-03-01

Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.

Photovoltaic module bypass diode encapsulation

NASA Technical Reports Server (NTRS)

Shepard, N. J., Jr.

1983-01-01

The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

Numerical schemes for anomalous diffusion of single-phase fluids in porous media

NASA Astrophysics Data System (ADS)

Awotunde, Abeeb A.; Ghanam, Ryad A.; Al-Homidan, Suliman S.; Tatar, Nasser-eddine

2016-10-01

Simulation of fluid flow in porous media is an indispensable part of oil and gas reservoir management. Accurate prediction of reservoir performance and profitability of investment rely on our ability to model the flow behavior of reservoir fluids. Over the years, numerical reservoir simulation models have been based mainly on solutions to the normal diffusion of fluids in the porous reservoir. Recently, however, it has been documented that fluid flow in porous media does not always follow strictly the normal diffusion process. Small deviations from normal diffusion, called anomalous diffusion, have been reported in some experimental studies. Such deviations can be caused by different factors such as the viscous state of the fluid, the fractal nature of the porous media and the pressure pulse in the system. In this work, we present explicit and implicit numerical solutions to the anomalous diffusion of single-phase fluids in heterogeneous reservoirs. An analytical solution is used to validate the numerical solution to the simple homogeneous case. The conventional wellbore flow model is modified to account for anomalous behavior. Example applications are used to show the behavior of wellbore and wellblock pressures during the single-phase anomalous flow of fluids in the reservoirs considered.

Advances in single mode and high power AlGaInN laser diode technology for systems applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Michal; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Smalc-Koziorowska, Julita; Stanczyk, Szymon; Watson, Scott; Kelly, Antony E.

2015-03-01

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

Diode Lasers and Light Emitting Diodes Operating at Room Temperature with Wavelengths Above 3 Micrometers

DTIC Science & Technology

2011-11-29

as an active region of mid - infrared LEDs. It should be noted that active region based on interband transition is equally useful for both laser and...IR LED technology for infrared scene projectors”, Dr. E. Golden, Air Force Research Laboratory, Eglin Air Force Base .  “A stable mid -IR, GaSb...multimode lasers. Single spatial mode 3-3.2 J.lm diode lasers were developed. LEDs operate at wavelength above 4 J.lm at RT. Dual color mid - infrared

Pump Diode Characterization for an Unstable Diode-Pumped Alkali Laser Resonator

DTIC Science & Technology

2013-03-01

2003. Petersen, A., and R. Lane, Second harmonic operation of diode-pumped Rb vapor lasers , Proc. of SPIE, 7005, 2008. Siegman , A. E., Lasers ...University Science Books, Sausalito, CA, 1986. Siegman , A. E., Defining, measuring and optimizing laser beam quality, Proc. of SPIE, 1868, 1993. Steck, D...PUMP DIODE CHARACTERIZATION FOR AN UNSTABLE DIODE-PUMPED ALKALI LASER RESONATOR THESIS Chad T. Taguba, Master Sergeant, USAF AFIT-ENP-13-M-33

Shock-Induced phase transition of single crystal copper

NASA Astrophysics Data System (ADS)

Neogi, Anupam; Mitra, Nilanjan

2017-05-01

We have carried out a series of multi-million atoms non-equilibrium molecular dynamics simulations to investigate the effect of crystal orientation over the shock induced plasticity and phase transformation in single crystal copper. Crystallographic orientation of [100], [110] and [111] has been studied for various intensity of shock ranging from 1.0 km/s to 3.0 km/s. During shock wave propagation along <100> and <110>, a FCC-to-BCC phase transformation has been observed to occur behind the shock front at higher intensity of shock. Nucleated body centered phase is identified through common neighbor analysis, polyhedral matching template method, radial distribution function and also from the energetic of the particles.

Investigation on emission characteristics of metal-ceramic cathode applied to industrial X-ray diode.

PubMed

Xun, Ma; Jianqiang, Yuan; Hongwei, Liu; Hongtao, Li; Lingyun, Wang; Ping, Jiang

2016-06-01

The industrial x-ray diode with high impedance configuration is usually adopted to generate repetitive x-ray, but its performance would be worsened due to lower electric field on the cathode of diode when a voltage of several hundreds of kV is applied. To improve its performance, a novel metal-ceramic cathode is proposed in this paper. Key factors (width, relative permittivity of ceramic, and so on) affecting electric field distribution on triple points are analyzed by electrostatic field calculation program, so as to optimize the design of this novel cathode. Experiments are done to study the characteristics including emission current of cathode, diode voltage duration, diode mean dynamic impedance, and diode impedance drop velocity within diode power duration. The results show that metal-ceramic cathode could improve diode performance by enhancing emission current and stabling impedance; the impedance drop velocity of diode with spoke-shaped metal-ceramic cathode was reduced to -5 Ω ns(-1) within diode power duration, comparing to -15 Ω ns(-1) with metal foil cathode.

100 Years of the Physics of Diodes

NASA Astrophysics Data System (ADS)

Luginsland, John

2013-10-01

The Child-Langmuir Law (CL), discovered 100 years ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space-charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high-energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nano-scale quantum diodes and plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light-emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We will review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic, field, and photo-emission) to the space charge limited state (CL) will be addressed, especially highlighting important simulation and experimental developments in selected contemporary areas of study. This talk will stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion. Also emphasized is the role of non-equilibrium phenomena associated with materials and plasmas in close contact. Work supported by the Air Force Office of Scientific Research.

Directed self-assembly of liquid crystalline blue-phases into ideal single-crystals

NASA Astrophysics Data System (ADS)

Martínez-González, Jose A.; Li, Xiao; Sadati, Monirosadat; Zhou, Ye; Zhang, Rui; Nealey, Paul F.; de Pablo, Juan J.

2017-06-01

Chiral nematic liquid crystals are known to form blue phases--liquid states of matter that exhibit ordered cubic arrangements of topological defects. Blue-phase specimens, however, are generally polycrystalline, consisting of randomly oriented domains that limit their performance in applications. A strategy that relies on nano-patterned substrates is presented here for preparation of stable, macroscopic single-crystal blue-phase materials. Different template designs are conceived to exert control over different planes of the blue-phase lattice orientation with respect to the underlying substrate. Experiments are then used to demonstrate that it is indeed possible to create stable single-crystal blue-phase domains with the desired orientation over large regions. These results provide a potential avenue to fully exploit the electro-optical properties of blue phases, which have been hindered by the existence of grain boundaries.

Single phase space laundry development

NASA Technical Reports Server (NTRS)

Colombo, Gerald V.; Putnam, David F.; Lunsford, Teddie D.; Streech, Neil D.; Wheeler, Richard R., Jr.; Reimers, Harold

1993-01-01

This paper describes a newly designed, 2.7 Kg (6 pound) capacity, laundry machine called the Single Phase Laundry (SPSL). The machine was designed to wash and dry crew clothing in a micro-gravity environment. A prototype unit was fabricated for NASA-JSC under a Small Business Innovated Research (SBIR) contract extending from September 1990 to January 1993. The unit employs liquid jet agitation, microwave vacuum drying, and air jet tumbling, which was perfected by KC-135 zero-g flight testing. Operation is completely automated except for loading and unloading clothes. The unit uses about 20 percent less power than a conventional household appliance.

Fiber Grating Coupled Light Source Capable of Tunable, Single Frequency Operation

NASA Technical Reports Server (NTRS)

Krainak, Michael A. (Inventor); Duerksen, Gary L. (Inventor)

2001-01-01

Fiber Bragg grating coupled light sources can achieve tunable single-frequency (single axial and lateral spatial mode) operation by correcting for a quadratic phase variation in the lateral dimension using an aperture stop. The output of a quasi-monochromatic light source such as a Fabry Perot laser diode is astigmatic. As a consequence of the astigmatism, coupling geometries that accommodate the transverse numerical aperture of the laser are defocused in the lateral dimension, even for apsherical optics. The mismatch produces the quadratic phase variation in the feedback along the lateral axis at the facet of the laser that excites lateral modes of higher order than the TM(sub 00). Because the instability entails excitation of higher order lateral submodes, single frequency operation also is accomplished by using fiber Bragg gratings whose bandwidth is narrower than the submode spacing. This technique is particularly pertinent to the use of lensed fiber gratings in lieu of discrete coupling optics. Stable device operation requires overall phase match between the fed-back signal and the laser output. The fiber Bragg grating acts as a phase-preserving mirror when the Bragg condition is met precisely. The phase-match condition is maintained throughout the fiber tuning range by matching the Fabry-Perot axial mode wavelength to the passband center wavelength of the Bragg grating.

Efficient Ho:LuLiF4 laser diode-pumped at 1.15 μm.

PubMed

Wang, Sheng-Li; Huang, Chong-Yuan; Zhao, Cheng-Chun; Li, Hong-Qiang; Tang, Yu-Long; Yang, Nan; Zhang, Shuai-Yi; Hang, Yin; Xu, Jian-Qiu

2013-07-15

We report the first laser operation based on Ho(3+)-doped LuLiF(4) single crystal, which is directly pumped with 1.15-μm laser diode (LD). Based on the numerical model, it is found that the "two-for-one" effect induced by the cross-relaxation plays an important role for the laser efficiency. The maximum continuous wave (CW) output power of 1.4 W is produced with a beam propagation factor of M(2) ~2 at the lasing wavelength of 2.066 μm. The slope efficiency of 29% with respect to absorbed power is obtained.

Single-random-phase holographic encryption of images

NASA Astrophysics Data System (ADS)

Tsang, P. W. M.

2017-02-01

In this paper, a method is proposed for encrypting an optical image onto a phase-only hologram, utilizing a single random phase mask as the private encryption key. The encryption process can be divided into 3 stages. First the source image to be encrypted is scaled in size, and pasted onto an arbitrary position in a larger global image. The remaining areas of the global image that are not occupied by the source image could be filled with randomly generated contents. As such, the global image as a whole is very different from the source image, but at the same time the visual quality of the source image is preserved. Second, a digital Fresnel hologram is generated from the new image, and converted into a phase-only hologram based on bi-directional error diffusion. In the final stage, a fixed random phase mask is added to the phase-only hologram as the private encryption key. In the decryption process, the global image together with the source image it contained, can be reconstructed from the phase-only hologram if it is overlaid with the correct decryption key. The proposed method is highly resistant to different forms of Plain-Text-Attacks, which are commonly used to deduce the encryption key in existing holographic encryption process. In addition, both the encryption and the decryption processes are simple and easy to implement.

3.1 W narrowband blue external cavity diode laser

NASA Astrophysics Data System (ADS)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Factors Controlling the Properties of Multi-Phase Arctic Stratocumulus Clouds

NASA Technical Reports Server (NTRS)

Fridlind, Ann; Ackerman, Andrew; Menon, Surabi

2005-01-01

The 2004 Multi-Phase Arctic Cloud Experiment (M-PACE) IOP at the ARM NSA site focused on measuring the properties of autumn transition-season arctic stratus and the environmental conditions controlling them, including concentrations of heterogeneous ice nuclei. Our work aims to use a large-eddy simulation (LES) code with embedded size-resolved aerosol and cloud microphysics to identify factors controlling multi-phase arctic stratus. Our preliminary simulations of autumn transition-season clouds observed during the 1994 Beaufort and Arctic Seas Experiment (BASE) indicated that low concentrations of ice nuclei, which were not measured, may have significantly lowered liquid water content and thereby stabilized cloud evolution. However, cloud drop concentrations appeared to be virtually immune to changes in liquid water content, indicating an active Bergeron process with little effect of collection on drop number concentration. We will compare these results with preliminary simulations from October 8-13 during MPACE. The sensitivity of cloud properties to uncertainty in other factors, such as large-scale forcings and aerosol profiles, will also be investigated. Based on the LES simulations with M-PACE data, preliminary results from the NASA GlSS single-column model (SCM) will be used to examine the sensitivity of predicted cloud properties to changing cloud drop number concentrations for multi-phase arctic clouds. Present parametrizations assumed fixed cloud droplet number concentrations and these will be modified using M-PACE data.

A new cryogenic diode thermometer

NASA Astrophysics Data System (ADS)

Courts, S. S.; Swinehart, P. R.; Yeager, C. J.

2002-05-01

While the introduction of yet another cryogenic diode thermometer is not earth shattering, a new diode thermometer, the DT-600 series, recently introduced by Lake Shore Cryotronics, possesses three features that make it unique among commercial diode thermometers. First, these diodes have been probed at the chip level, allowing for the availability of a bare chip thermometer matching a standard curve-an important feature in situations where real estate is at a premium (IR detectors), or where in-situ calibration is difficult. Second, the thermometry industry has assumed that interchangeability should be best at low temperatures. Thus, good interchangeability at room temperatures implies a very good interchangeability at cryogenic temperature, resulting in a premium priced sensor. The DT-600 series diode thermometer is available in an interchangeability band comparable to platinum RTDs with the added advantage of interchangeability to 2 K. Third, and most important, the DT-600 series diode does not exhibit an instability in the I-V characteristic in the 8 K to 20 K temperature range that is observed in other commercial diode thermometer devices [1]. This paper presents performance characteristics for the DT-600 series diode thermometer along with a comparison of I-V curves for this device and other commercial diode thermometers exhibiting an I-V instability.

A diode laser-based velocimeter providing point measurements in unseeded flows using modulated filtered Rayleigh scattering (MFRS)

NASA Astrophysics Data System (ADS)

Jagodzinski, Jeremy James

2007-12-01

The development to date of a diode-laser based velocimeter providing point-velocity-measurements in unseeded flows using molecular Rayleigh scattering is discussed. The velocimeter is based on modulated filtered Rayleigh scattering (MFRS), a novel variation of filtered Rayleigh scattering (FRS), utilizing modulated absorption spectroscopy techniques to detect a strong absorption of a relatively weak Rayleigh scattered signal. A rubidium (Rb) vapor filter is used to provide the relatively strong absorption; alkali metal vapors have a high optical depth at modest vapor pressures, and their narrow linewidth is ideally suited for high-resolution velocimetry. Semiconductor diode lasers are used to generate the relatively weak Rayleigh scattered signal; due to their compact, rugged construction diode lasers are ideally suited for the environmental extremes encountered in many experiments. The MFRS technique utilizes the frequency-tuning capability of diode lasers to implement a homodyne detection scheme using lock-in amplifiers. The optical frequency of the diode-based laser system used to interrogate the flow is rapidly modulated about a reference frequency in the D2-line of Rb. The frequency modulation is imposed on the Rayleigh scattered light that is collected from the probe volume in the flow under investigation. The collected frequency modulating Rayleigh scattered light is transmitted through a Rb vapor filter before being detected. The detected modulated absorption signal is fed to two lock-in amplifers synchronized with the modulation frequency of the source laser. High levels of background rejection are attained since the lock-ins are both frequency and phase selective. The two lock-in amplifiers extract different Fourier components of the detected modulated absorption signal, which are ratioed to provide an intensity normalized frequency dependent signal from a single detector. A Doppler frequency shift in the collected Rayleigh scattered light due to a change

High power diode lasers emitting from 639 nm to 690 nm

NASA Astrophysics Data System (ADS)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Time series of ground reaction forces following a single leg drop jump landing in elite youth soccer players consist of four distinct phases.

PubMed

Fransz, Duncan P; Huurnink, Arnold; de Boode, Vosse A; Kingma, Idsart; van Dieën, Jaap H

2016-10-01

The single leg drop jump landing test may assess dynamic and static balance abilities in different phases of the landing. However objective definitions of different phases following landing and associated reliability are lacking. Therefore, we determined the existence of possible distinct phases of single leg drop jump landing on a force plate in 82 elite youth soccer players. Three outcome measures were calculated over moving windows of five sizes: center of pressure (COP) speed, COP sway and horizontal ground reaction force (GRF). Per outcome measure, a Factor Analysis was employed with all windows as input variables. It showed that four factors (patterns of variance) largely (>75%) explained the variance across subjects/trials along the 12s time series. Each factor was highly associated with a distinct phase of the time series signal: dynamic (0.4-2.7s), late dynamic (2.5-5.0s), static 1 (5.0-8.3s) and static 2 (8.1-11.7s). Intra-class correlations (ICC) between trials were lower for the dynamic phases (0.45-0.68) than for the static phases (0.60-0.86). The COP speed showed higher ICC's (0.63-0.86) than COP sway (0.45-0.61) and GRF (0.57-0.71) for all four phases. In conclusion, following a drop jump landing unique information is available in four distinct phases. The COP speed is most reliable, with higher reliability in the static phases compared to the dynamic phases. Future studies should assess the sensitivity of information from dynamic, late dynamic and static phases. Copyright © 2016 Elsevier B.V. All rights reserved.

Single-phase power distribution system power flow and fault analysis

NASA Technical Reports Server (NTRS)

Halpin, S. M.; Grigsby, L. L.

1992-01-01

Alternative methods for power flow and fault analysis of single-phase distribution systems are presented. The algorithms for both power flow and fault analysis utilize a generalized approach to network modeling. The generalized admittance matrix, formed using elements of linear graph theory, is an accurate network model for all possible single-phase network configurations. Unlike the standard nodal admittance matrix formulation algorithms, the generalized approach uses generalized component models for the transmission line and transformer. The standard assumption of a common node voltage reference point is not required to construct the generalized admittance matrix. Therefore, truly accurate simulation results can be obtained for networks that cannot be modeled using traditional techniques.

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

NASA Technical Reports Server (NTRS)

Boric-Lubecke, Olga; Pan, Dee-Son; Itoh, Tatsuo

1995-01-01

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

Prediction of successful memory encoding based on single-trial rhinal and hippocampal phase information.

PubMed

Höhne, Marlene; Jahanbekam, Amirhossein; Bauckhage, Christian; Axmacher, Nikolai; Fell, Juergen

2016-10-01

Mediotemporal EEG characteristics are closely related to long-term memory formation. It has been reported that rhinal and hippocampal EEG measures reflecting the stability of phases across trials are better suited to distinguish subsequently remembered from forgotten trials than event-related potentials or amplitude-based measures. Theoretical models suggest that the phase of EEG oscillations reflects neural excitability and influences cellular plasticity. However, while previous studies have shown that the stability of phase values across trials is indeed a relevant predictor of subsequent memory performance, the effect of absolute single-trial phase values has been little explored. Here, we reanalyzed intracranial EEG recordings from the mediotemporal lobe of 27 epilepsy patients performing a continuous word recognition paradigm. Two-class classification using a support vector machine was performed to predict subsequently remembered vs. forgotten trials based on individually selected frequencies and time points. We demonstrate that it is possible to successfully predict single-trial memory formation in the majority of patients (23 out of 27) based on only three single-trial phase values given by a rhinal phase, a hippocampal phase, and a rhinal-hippocampal phase difference. Overall classification accuracy across all subjects was 69.2% choosing frequencies from the range between 0.5 and 50Hz and time points from the interval between -0.5s and 2s. For 19 patients, above chance prediction of subsequent memory was possible even when choosing only time points from the prestimulus interval (overall accuracy: 65.2%). Furthermore, prediction accuracies based on single-trial phase surpassed those based on single-trial power. Our results confirm the functional relevance of mediotemporal EEG phase for long-term memory operations and suggest that phase information may be utilized for memory enhancement applications based on deep brain stimulation. Copyright © 2016 Elsevier

A two-stage series diode for intense large-area moderate pulsed X rays production.

PubMed

Lai, Dingguo; Qiu, Mengtong; Xu, Qifu; Su, Zhaofeng; Li, Mo; Ren, Shuqing; Huang, Zhongliang

2017-01-01

This paper presents a method for moderate pulsed X rays produced by a series diode, which can be driven by high voltage pulse to generate intense large-area uniform sub-100-keV X rays. A two stage series diode was designed for Flash-II accelerator and experimentally investigated. A compact support system of floating converter/cathode was invented, the extra cathode is floating electrically and mechanically, by withdrawing three support pins several milliseconds before a diode electrical pulse. A double ring cathode was developed to improve the surface electric field and emission stability. The cathode radii and diode separation gap were optimized to enhance the uniformity of X rays and coincidence of the two diode voltages based on the simulation and theoretical calculation. The experimental results show that the two stage series diode can work stably under 700 kV and 300 kA, the average energy of X rays is 86 keV, and the dose is about 296 rad(Si) over 615 cm 2 area with uniformity 2:1 at 5 cm from the last converter. Compared with the single diode, the average X rays' energy reduces from 132 keV to 88 keV, and the proportion of sub-100-keV photons increases from 39% to 69%.

Ultrafast electric phase control of a single exciton qubit

NASA Astrophysics Data System (ADS)

Widhalm, Alex; Mukherjee, Amlan; Krehs, Sebastian; Sharma, Nandlal; Kölling, Peter; Thiede, Andreas; Reuter, Dirk; Förstner, Jens; Zrenner, Artur

2018-03-01

We report on the coherent phase manipulation of quantum dot excitons by electric means. For our experiments, we use a low capacitance single quantum dot photodiode which is electrically controlled by a custom designed SiGe:C BiCMOS chip. The phase manipulation is performed and quantified in a Ramsey experiment, where ultrafast transient detuning of the exciton energy is performed synchronous to double pulse π/2 ps laser excitation. We are able to demonstrate electrically controlled phase manipulations with magnitudes up to 3π within 100 ps which is below the dephasing time of the quantum dot exciton.

Thermal diodes, regulators, and switches: Physical mechanisms and potential applications

NASA Astrophysics Data System (ADS)

Wehmeyer, Geoff; Yabuki, Tomohide; Monachon, Christian; Wu, Junqiao; Dames, Chris

2017-12-01

Interest in new thermal diodes, regulators, and switches has been rapidly growing because these components have the potential for rich transport phenomena that cannot be achieved using traditional thermal resistors and capacitors. Each of these thermal components has a signature functionality: Thermal diodes can rectify heat currents, thermal regulators can maintain a desired temperature, and thermal switches can actively control the heat transfer. Here, we review the fundamental physical mechanisms of switchable and nonlinear heat transfer which have been harnessed to make thermal diodes, switches, and regulators. The review focuses on experimental demonstrations, mainly near room temperature, and spans the fields of heat conduction, convection, and radiation. We emphasize the changes in thermal properties across phase transitions and thermal switching using electric and magnetic fields. After surveying fundamental mechanisms, we present various nonlinear and active thermal circuits that are based on analogies with well-known electrical circuits, and analyze potential applications in solid-state refrigeration and waste heat scavenging.

Compact atom interferometer using single laser

NASA Astrophysics Data System (ADS)

Chiow, Sheng-wey; Yu, Nan

2018-06-01

A typical atom interferometer requires vastly different laser frequencies at different stages of operation, e.g., near resonant light for laser cooling and far detuned light for atom optics, such that multiple lasers are typically employed. The number of laser units constrains the achievable minimum size and power in practical devices for resource critical environments such as space. We demonstrate a compact atom interferometer accelerometer operated by a single diode laser. This is achieved by dynamically changing the laser output frequency in GHz range while maintaining spectroscopic reference to an atomic transition via a sideband generated by phase modulation. At the same time, a beam path sharing configuration is also demonstrated for a compact sensor head design, in which atom interferometer beams share the same path as that of the cooling beam. This beam path sharing also significantly simplifies three-axis atomic accelerometry in microgravity using single sensor head.

Polarization/Spatial Combining of Laser-Diode Pump Beams

NASA Technical Reports Server (NTRS)

Gelsinger, Paul; Liu, Duncan

2008-01-01

A breadboard version of an optical beam combiner is depicted which make it possible to use the outputs of any or all of four multimode laser diodes to pump a non-planar ring oscillator (NPRO) laser. The output of each laser diode has a single-mode profile in the meridional plane containing an axis denoted the 'fast' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis. One of the purposes served by the beam-combining optics is to reduce the fast-axis numerical aperture (NA) of the laser-diode output to match the NA of the optical fiber. Along the slow axis, the unmodified laser-diode NA is already well matched to the fiber optic NA, so no further slow-axis beam shaping is needed. In this beam combiner, the laser-diode outputs are collimated by aspherical lenses, then half-wave plates and polarizing beam splitters are used to combine the four collimated beams into two beams. Spatial combination of the two beams and coupling into the optical fiber is effected by use of anamorphic prisms, mirrors, and a focusing lens. The anamorphic prisms are critical elements in the NA-matching scheme, in that they reduce the fast-axis beam width to 1/6 of its original values. Inasmuch as no slow-axis beam shaping is needed, the collimating and focusing lenses are matched for 1:1 iumaging. Because these lenses are well corrected for infinite conjugates the combiner offers diffraction-limited performance along both the fast and slow axes.

Narrow linewidth operation of a spectral beam combined diode laser bar.

PubMed

Zhu, Zhanda; Jiang, Menghua; Cheng, Siqi; Hui, Yongling; Lei, Hong; Li, Qiang

2016-04-20

Our experiment is expected to provide an approach for realizing ultranarrow linewidth for a spectral beam combined diode laser bar. The beams of a diode laser bar are combined in a fast axis after a beam transformation system. With the help of relay optics and a transform lens with a long focal length of 1.5 m, the whole wavelength of a spectral combined laser bar can be narrowed down to 0.48 nm from more than 10 nm. We have achieved 56.7 W cw from a 19-element single bar with an M² of 1.4  (in horizontal direction)×11.6  (in vertical direction). These parameters are good evidence that all the beams from the diode laser bar are combined together to increase the brightness.

Output limitations to single stage and cascaded 2-2.5 mum light emitting diodes

NASA Astrophysics Data System (ADS)

Hudson, Andrew Ian

Since the advent of precise semiconductor engineering techniques in the 1960s, considerable effort has been devoted both in academia and private industry to the fabrication and testing of complex structures. In addition to other techniques, molecular beam epitaxy (MBE) has made it possible to create devices with single mono-layer accuracy. This facilitates the design of precise band structures and the selection of specific spectroscopic properties for light source materials. The applications of such engineered structures have made solid state devices common commercial quantities. These applications include solid state lasers, light emitting diodes and light sensors. Band gap engineering has been used to design emitters for many wavelength bands, including the short wavelength (SWIR) infrared region which ranges from 1.5 to 2.5mum. Practical devices include sensors operating in the 2-2.5mum range. When designing such a device, necessary concerns include the required bias voltage, operating current, input impedance and especially for emitters, the wall-plug efficiency. Three types of engineered structures are considered in this thesis. These include GaInAsSb quaternary alloy bulk active regions, GaInAsSb multiple quantum well devices (MQW) and GaInAsSb cascaded light emitting diodes. The three structures are evaluated according to specific standards applied to emitters of infrared light. The spectral profiles are obtained with photo or electro-luminescence, for the purpose of locating the peak emission wavelength. The peak wavelength for these specimens is in the 2.2-2.5mum window. The emission efficiency is determined by employing three empirical techniques: current/voltage (IV), radiance/current (LI), and carrier lifetime measurements. The first verifies that the structure has the correct electrical properties, by measuring among other parameters the activation voltage. The second is used to determine the energy efficiency of the device, including the wall-plug and

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

2018-05-01

The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.