Structural and magnetic properties of nanocrystalline NiFe2O4 thin film prepared by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Chavan, Apparao R.; Chilwar, R. R.; Shisode, M. V.; Hivrekar, Mahesh M.; Mande, V. K.; Jadhav, K. M.

2018-05-01

The nanocrystalline NiFe2O4 thin film has been prepared using a spray pyrolysis technique on glass substrate. The prepared thin film was characterized by using X-ray diffraction (XRD), Fourier transform Infrared spectroscopy (FTIR), and Field Emission-Scanning Electron Microscopy (FE-SEM) characterization techniques for the structural and microstructural analysis. The magnetic property was measured using vibrating sample magnetometer (VSM) at room temperature. X-ray diffraction studies show the formation of single phase spinel structure of the thin film. The octahedral and tetrahedral vibration in the sample was studied by Fourier transform infrared (FT-IR) spectra. Magnetic hysteresis loop was recorded for thin film at room temperature. At 15 kOe, saturation magnetization (Ms) was found to increase while coercivity (Hc) decreases with thickness of the NiFe2O4 thin film.

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

NASA Astrophysics Data System (ADS)

Kim, Sang Woo; Yoon, Chong S.

2007-09-01

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

Third generation biosensing matrix based on Fe-implanted ZnO thin film

NASA Astrophysics Data System (ADS)

Saha, Shibu; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

2010-09-01

Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 μA mM-1 cm-2 and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

Controlling the ferroelectric and resistive switching properties of a BiFeO3 thin film prepared using sub-5 nm dimension nanoparticles.

PubMed

Shirolkar, Mandar M; Li, Jieni; Dong, Xiaolei; Li, Ming; Wang, Haiqian

2017-10-04

In recent years, BiFeO 3 has attracted significant attention as an interesting multiferroic material in the exploration of fundamental science and development of novel applications. Our previous study (Phys. Chem. Chem. Phys.18, 2016, 25409) highlighted the interesting physicochemical features of BiFeO 3 of sub-5 nm dimension. The study also accentuated the existence of weak ferroelectricity at sub-5 nm dimensions in BiFeO 3 . Based on this feature, we have prepared thin films using sub-5 nm BiFeO 3 nanoparticles and explored various physicochemical properties of the thin film. We report that during the formation of the thin film, the nanoparticles aggregated; particularly, annihilation of their nanotwinning nature was observed. Qualitatively, the Gibbs free energy change ΔG governed the abovementioned processes. The thin film exhibited an R3c phase and enhanced Bi-O-Fe coordination as compared to the sub-5 nm nanoparticles. Raman spectroscopy under the influence of a magnetic field shows a magnetoelectric effect, spin phonon coupling, and magnetic anisotropy. We report room-temperature ferroelectric behavior in the thin film, which enhances with the application of a magnetic field; this confirms the multiferroic nature of the thin film. The thin film shows polarization switching ability at multiple voltages and read-write operation at low bias (±0.5 V). Furthermore, the thin film shows negative differential-complementary resistive switching behavior in the nano-microampere current range. We report nearly stable 1-bit operation for 10 2 cycles, 10 5 voltage pulses, and 10 5 s, demonstrating the paradigm device applications. The observed results thus show that the thin films prepared using sub-5 nm BiFeO 3 nanoparticles are a promising candidate for future spintronics and memory applications. The reported approach can also be pertinent to explore the physicochemical properties and develop potential applications of several other nanoparticles.

Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

NASA Astrophysics Data System (ADS)

Belkhedkar, M. R.; Ubale, A. U.

2018-05-01

Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

Influences of annealing temperature on sprayed CuFeO2 thin films

NASA Astrophysics Data System (ADS)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Synthesis and characterization of nanostructured strontium hexaferrite thin films by the sol-gel method

NASA Astrophysics Data System (ADS)

Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.

2012-07-01

Nanostructured single phase strontium hexaferrite, SrFe12O19, thin films have been synthesized on the (100) silicon substrate using a spin coating sol-gel process. The thin films with various Fe/Sr molar ratios of 8-12 were calcined at different temperatures from 500 to 900 °C. The composition, microstructure and magnetic properties of the SrFe12O19 thin films were characterized using Fourier transform infrared spectroscopy, differential thermal analysis, thermogravimetry, X-ray diffraction, electron microscopy and vibrating sample magnetometer. The results showed that the optimum molar ratio for Fe/Sr was 10 at which the lowest calcination temperature to obtain the single phase strontium hexaferrite thin film was 800 °C. The magnetic measurements revealed that the sample with Fe/Sr molar ratio of 10, exhibited higher saturation magnetization (267.5 emu/cm3) and coercivity (4290 Oe) in comparison with those synthesized under other Fe/Sr molar ratios.

Tuning Superconductivity in FeSe Thin Films via Magnesium Doping.

PubMed

Qiu, Wenbin; Ma, Zongqing; Liu, Yongchang; Shahriar Al Hossain, Mohammed; Wang, Xiaolin; Cai, Chuanbing; Dou, Shi Xue

2016-03-01

In contrast to its bulk crystal, the FeSe thin film or layer exhibits better superconductivity performance, which recently attracted much interest in its fundamental research as well as in potential applications around the world. In the present work, tuning superconductivity in FeSe thin films was achieved by magnesium-doping technique. Tc is significantly enhanced from 10.7 K in pure FeSe films to 13.4 K in optimized Mg-doped ones, which is approximately 1.5 times higher than that of bulk crystals. This is the first time achieving the enhancement of superconducting transition temperature in FeSe thin films with practical thickness (120 nm) via a simple Mg-doping process. Moreover, these Mg-doped FeSe films are quite stable in atmosphere with Hc2 up to 32.7 T and Tc(zero) up to 12 K, respectively, implying their outstanding potential for practical applications in high magnetic fields. It was found that Mg enters the matrix of FeSe lattice, and does not react with FeSe forming any other secondary phase. Actually, Mg first occupies Fe-vacancies, and then substitutes for some Fe in the FeSe crystal lattices when Fe-vacancies are fully filled. Simultaneously, external Mg-doping introduces sufficient electron doping and induces the variation of electron carrier concentration according to Hall coefficient measurements. This is responsible for the evolution of superconducting performance in FeSe thin films. Our results provide a new strategy to improve the superconductivity of 11 type Fe-based superconductors and will help us to understand the intrinsic mechanism of this unconventional superconducting system.

Structural and magnetic analysis of Cu, Co substituted NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Sharma, Hakikat; Bala, Kanchan; Negi, N. S.

2016-05-01

In the present work we prepared NiFe2O4, Ni0.95Cu0.05Fe2O4 and Ni0.94Cu0.05Co0.01 Fe2O4 thin films by metallo-organic decomposition method (MOD) using spin coating technique. The thin films were analyzed by X-ray diffractometer (XRD) and Atomic force microscope (AFM) for structural studies. The XRD patterns confirmed the ferrite phase of thin films. From AFM, we analyzed surface morphology, calculated grain size (GS) and root mean square roughness (RMSR). Room temperature magnetic properties were investigated by vibrating sample magnetometer (VSM).

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

NASA Astrophysics Data System (ADS)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Giant perpendicular magnetic anisotropy in Fe/III-V nitride thin films

PubMed Central

2018-01-01

Large perpendicular magnetic anisotropy (PMA) in transition metal thin films provides a pathway for enabling the intriguing physics of nanomagnetism and developing broad spintronics applications. After decades of searches for promising materials, the energy scale of PMA of transition metal thin films, unfortunately, remains only about 1 meV. This limitation has become a major bottleneck in the development of ultradense storage and memory devices. We discovered unprecedented PMA in Fe thin-film growth on the (0001¯) N-terminated surface of III-V nitrides from first-principles calculations. PMA ranges from 24.1 meV/u.c. in Fe/BN to 53.7 meV/u.c. in Fe/InN. Symmetry-protected degeneracy between x2 − y2 and xy orbitals and its lift by the spin-orbit coupling play a dominant role. As a consequence, PMA in Fe/III-V nitride thin films is dominated by first-order perturbation of the spin-orbit coupling, instead of second-order in conventional transition metal/oxide thin films. This game-changing scenario would also open a new field of magnetism on transition metal/nitride interfaces. PMID:29670948

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films

NASA Astrophysics Data System (ADS)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-03-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films ( x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR ( 36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies ( δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.

Structural, XPS and magnetic studies of pulsed laser deposited Fe doped Eu{sub 2}O{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Sandeep; Prakash, Ram, E-mail: rpgiuc@gmail.com; Choudhary, R.J.

2015-10-15

Highlights: • Growth of Fe doped Eu{sub 2}O{sub 3} thin films by PLD. • XRD and Raman’s spectroscopy used for structure confirmation. • The electronic states of Eu and Fe are confirmed by XPS. • Magnetic properties reveals room temperature magnetic ordering in deposited film. - Abstract: Fe (4 at.%) doped europium (III) oxide thin film was deposited on silicon (1 0 0) substrate by pulsed laser deposition technique. Structural, spectral and magnetic properties were studied by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and magnetization measurements. XRD and Raman spectroscopy reveal that the grown film is singlemore » phased and belongs to the cubic structure of Eu{sub 2}O{sub 3}. XPS study of the Eu{sub 1.92}Fe{sub 0.08}O{sub 3} film shows that Fe exists in Fe{sup 3+} ionic state in the film. The film exhibits magnetic ordering at room temperature.« less

Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

Effect of tungsten (W) on structural and magnetic properties of electroplated NiFe thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Kannan, R.; Devaki, P.; Premkumar, P. S.; Selvambikai, M.

2018-04-01

Electrodeposition of nanocrystalline NiFe and NiFeW thin films were carried out from ammonium citrate bath at a constant current density and controlled pH of 8 by varying the bath temperature from 40 °C to 70 °C. The surface morphology and chemical composition of the electrodeposited NiFe and NiFeW soft magnetic thin films were studied by using SEM and EDAX. The SEM micrographs of the films coated at higher electrodeposited bath temperature have no micro cracks and also the films have more uniform surface morphology. The existence of crystalline nature of the coated films were analysed by XRD. The presence of predominant peaks in x-ray diffraction pattern (compared with JCPDS data) reveal that the average crystalline size was in the order of few tens of nano meters. The magnetic properties such as coercivity, saturation magnetization and magnetic flux density have been calculated from vibrating sample magnetometer analysis. The VSM result shows that the NiFeW thin film synthesised at 70 °C exhibit the lower coercivity with higher saturation magnetization. The hardness and adhesion of the electroplated films have been investigated. Reasons for variation in magnetic properties and structural characteristics are also discussed. The electroplated NiFe and NiFeW thin films can be used for Micro Electro Mechanical System (MEMS) applications due to their excellent soft magnetic behaviour.

Effect of film thickness on soft magnetic behavior of Fe2CoSi Heusler alloy for spin transfer torque device applications

NASA Astrophysics Data System (ADS)

Asvini, V.; Saravanan, G.; Kalaiezhily, R. K.; Raja, M. Manivel; Ravichandran, K.

2018-04-01

Fe2CoSi based Heusler alloy thin films were deposited on Si (111) wafer (substrate) of varying thickness using ultra high vacuum DC magnetron sputtering. The structural behavior was observed and found to be hold the L21 structure. The deposited thin films were characterized magnetic properties using vibrating sample magnetometer; the result shows a very high saturated magnetization (Ms), lowest coercivity (Hc), high curie transition temperature (Tc) and low hysteresis loss. Thin film thickness of 75 nm Fe2CoSi sample maintained at substrate temperature 450°C shows the lowest coercivity (Hc=7 Oe). In general, Fe2CoSi Heusler alloys curie transition temperature is very high, due to strong exchange interaction between the Fe and Co atoms. The substrate temperature was kept constant at 450°C for varying thickness (e.g. 5, 20, 50, 75 and 100 nm) of thin film sample. The 75 nm thickness thin film sample shows well crystallanity and good magnetic properties, further squareness ratio in B-H loop increases with the increase in film thickness.

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

NASA Astrophysics Data System (ADS)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suharyadi, Edi, E-mail: esuharyadi@ugm.ac.id; Riyanto, Agus; Abraha, Kamsul

2016-04-19

CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co{sub 65}Ni{sub 15}Fe{sub 20}, Co{sub 62}Ni{sub 15}Fe{sub 23}, and Co{sub 55}Ni{sub 15}Fe{sub 30} thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co{sub 65}Ni{sub 15}Fe{sub 20}, Co{sub 62}Ni{sub 15}Fe{sub 23}, and Co{sub 55}Ni{sub 15}Fe{sub 30} thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending onmore » annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.« less

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

NASA Astrophysics Data System (ADS)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

PubMed

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films

NASA Astrophysics Data System (ADS)

Kudo, Kohei; Yamada, Shinya; Chikada, Jinichiro; Shimanuki, Yuta; Nakamura, Yoshiaki; Hamaya, Kohei

2018-04-01

We study the effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2- x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

Morin transition temperature in (0001)-oriented α-Fe{sub 2}O{sub 3} thin film and effect of Ir doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimomura, Naoki, E-mail: shimomura@ecei.tohoku.ac.jp; Pati, Satya Prakash; Sato, Yuji

2015-05-07

The structural properties and Morin transition in c-plane-oriented α-Fe{sub 2}O{sub 3} and Ir-doped α-Fe{sub 2}O{sub 3} thin films have been investigated. The enhancement of the Morin transition temperature (T{sub M}) in α-Fe{sub 2}O{sub 3} film by Ir doping has been demonstrated. The T{sub M} in the c-plane-oriented α-Fe{sub 2}O{sub 3} thin film was determined from the temperature-dependent in-plane magnetization and change of coercivity (H{sub c}); this T{sub M} value was found close to that of bulk α-Fe{sub 2}O{sub 3}. The spin directions of non-doped and Ir-doped α-Fe{sub 2}O{sub 3} at room temperature were also estimated from conversion electron Mössbauer spectroscopymore » measurements. We confirmed that Ir doping dramatically enhances the T{sub M} of α-Fe{sub 2}O{sub 3} thin film.« less

Effect of external magnetic field on the crystal growth of nano-structured Zn xMn 1- x+ yZr yFe 2-2 yO 4 thin films

NASA Astrophysics Data System (ADS)

Anjum, Safia; Rafique, M. S.; Khaleeq-ur-Rahaman, M.; Siraj, K.; Usman, Arslan; Ahsan, A.; Naseem, S.; Khan, K.

2011-06-01

Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 and Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films with different concentrations of Mn and Zr have been deposited on single crystal n-Si (400) at room temperature (RT) by pulse laser deposition technique (PLD). The films have been deposited under two conditions: (i) with the applied external magnetic field across the propagation of the plume (ii) without applied external magnetic field ( B=0). XRD results show the films have spinel cubic structure when deposited in the presence of magnetic field. SEM and AFM observations clearly show the effect of external applied magnetic field on the growth of films in terms of small particle size, improved uniformity and lower r.m.s. roughness. Thin films deposited under the influence of external magnetic field exhibit higher magnetization as measured by the VSM. The optical band gap energy Eg, refractive index n, reflection, absorption and the thickness of the thin films were measured by spectroscopy ellipsometer. The reflection of Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films is higher than Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 thin films due to the greater concentration of Zr. The thicknesses of the thin films under the influence of external magnetic field are larger than the films grown without field for both samples. The optical band gap energy Eg decreases with increasing film thickness. The films with external magnetic field are found highly absorbing in nature due to the larger film thickness.

Effect of dopants on the soft magnetic properties and high frequency characteristics of FeCoBM (M = Ti, Nb, Hf, and Ta) thin films.

PubMed

Hsieh, C C; Lin, T H; Chang, H W; Chang, C W; Chang, W C; Yang, C C

2011-03-01

Effect of dopants on the soft magnetic properties and high frequency characteristics of FeCoBM thin films (M = Ti, Nb, Hf, and Ta) have been studied. For (Fe0.55Co0.45)(100-x)B(x) (x = 5-15) thin films, with the increase of B content, the resistivity was increased because B could decrease the crystallinity of the films. The (Fe0.55Co0.45)90B10 thin film showed the optimum properties, where 4piM(s) = 16.1 kG, H(ce) = 64.2 Oe, H(ch) = 13.5 Oe, H(k) = 310 Oe and p = 338 microomega-cm. To reduce the coercivity of the film, the elements M, including Ti, Nb, Hf, and Ta, were selected to substitute for B in the FeCoB films. It was found that (Fe0.55Co0.45)90B6Ti2Nb2 thin film after annealing at a temperature of 200 degrees C for 30 min showed the optimal properties, where 4piM(s) = 15.8 kG, H(ce) = 4.8 Oe, H(ch) = 3.6 Oe, H(k) = 224 Oe and p = 290 microomega-cm. The theoretically calculated ferromagnetic resonance frequency of the developed films can be higher than 5 GHz.

Atomic structures of B20 FeGe thin films grown on the Si(111) surface

NASA Astrophysics Data System (ADS)

Kim, Wondong; Noh, Seungkyun; Yoon, Jisoo; Kim, Young Heon; Lee, Inho; Kim, Jae-Sung; Hwang, Chanyong

We investigated the growth and atomic structures of FeGe thin films on the Si (111) surface by using scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). The 2 5nm- thick FeGe thin films were prepared on the clean Si(111) 7x7 surface by co-deposition of Fe and Ge from separated electron-beam evaporators. With direct deposition on the substrate at the temperature above 550 K, the surface of FeGe films was not smooth and consisted of coarse grains. By the combination of room-temperature annealing and post-annealing process around 800 K, the structure of FeGe thin films evolved into the well crystalized structures. Atom-resolved STM images revealed that there are at least four different surface terminations. We constructed atomic models for each surface terminations based on the bulk atomic arrangement of a B20 chiral structure and confirmed that the observed STM images are successfully reproduced by using computational simulations employing Vienna Ab Initio Simulation package (VASP) with a B20 chiral structure model. TEM cross-sectional images also support our atomic models by revealing clearly the characteristic zigzag features of B20 structures of FeGe(111) thin films.

In situ TEM study of electron-beam radiation induced boron diffusion and effects on phase and microstructure evolution in nanostructured CoFeB/SiO2 thin film

NASA Astrophysics Data System (ADS)

Liu, B. H.; Teo, H. W.; Mo, Z. H.; Mai, Z. H.; Lam, J.; Xue, J. M.; Zhao, Y. Z.; Tan, P. K.

2017-01-01

Using in situ transmission electron microscopy (TEM), we studied boron diffusion and segregation in CoFeB/SiO2 nanostructured thin film stacks. We also investigated how these phenomena affected the phase and microstructure of CoFeB thin films under electron beam irradiation at 300 kV. A unique phase transformation was observed in CoFeB thin films under high-dose electron irradiation, from a polycrystalline Co3Fe to a unilateral amorphous phase of Co3Fe and nanocrystalline FexCo23-xB6. The unilateral amorphization of the Co3Fe film showed an electron-dose-rate sensitivity with a threshold dose rate. Detailed in situ TEM studies revealed that the unilateral amorphization of the Co3Fe film arose from boron segregation at the bottom of the Co3Fe thin film induced by radiation-enhanced diffusion of boron atoms that were displaced by electron knock-on effects. The radiation-induced nanocrystallization of FexCo23-xB6 was also found to be dose-rate sensitive with a higher electron beam current leading to earlier nucleation and more rapid grain growth. The nanocrystallization of FexCo23-xB6 occurred preferentially at the CoFeB/SiO2 interface. Kinetic studies by in situ TEM revealed the surface crystallization and diffusion-controlled nucleation and grain growth mechanisms. The radiation-enhanced atomic diffusivity and high-concentration of radiation-induced point defects at the Co3Fe/SiO2 interface enhanced the local short-range ordering of Fe, Co, and B atoms, favoring nucleation and grain growth of FexCo23-xB6 at the interface.

Phase Transitions and Domain Structure in Mixed Tetragonal-Rhombohedral BiFeO3 thin films using Raman Spectroscopy and Nonlinear Optics

NASA Astrophysics Data System (ADS)

Vlahos, E.; Kumar, A.; Denev, S.; Melville, A.; Adamo, C.; Ihlefeld, J. F.; Sheng, G.; Zeches, R. J.; Zhang, J. X.; He, Q.; Yang, C. H.; Erni, R.; Rossell, M. D.; J, A.; Hatt; Chu, Y.-H.; Wang, C. H.; Ederer, C.; Gopalan, V.; Chen, L. Q.; Schlom, D. G.; Spaldin, N. A.; Martin, L. W.; Ramesh, R.; Tenne, Dmitri

2010-03-01

We have shown that biaxially strained BiFeO3 thin films can undergo an isosymmetric phase transition from a rhombohedral-like to a tetragonal-like phase. This talk discusses the evolution of the tetragonal and the mixed phases in BiFeO3/YAlO3 thin films with varying film thickness using optical second harmonic generation (SHG) and Raman spectroscopy. 25nm, 75nm, and 225 nm thick films were studied; thinner films are dominated by the tetragonal phase, whereas thicker films exhibit both tetragonal and rhombohedral phases. The evolution of these phases as function of film thickness and temperature was experimentally determined.

Room temperature magneto-transport properties of nanocomposite Fe-In2O3 thin films

NASA Astrophysics Data System (ADS)

Tambasov, Igor A.; Gornakov, Kirill O.; Myagkov, Victor G.; Bykova, Liudmila E.; Zhigalov, Victor S.; Matsynin, Alexey A.; Yozhikova, Ekaterina V.

2015-12-01

A ferromagnetic Fe-In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe-In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe-In2O3 thin film had n=1.94·1020 cm-3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~-0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

High-coercivity FePt nanoparticle assemblies embedded in silica thin films.

PubMed

Yan, Q; Purkayastha, A; Singh, A P; Li, H; Li, A; Ramanujan, R V; Ramanath, G

2009-01-14

The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 degrees C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H(c)>630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

Structural and magnetic analysis of Cu, Co substituted NiFe{sub 2}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Hakikat; Bala, Kanchan; Negi, N. S.

2016-05-23

In the present work we prepared NiFe{sub 2}O{sub 4}, Ni{sub 0.95}Cu{sub 0.05}Fe{sub 2}O{sub 4} and Ni{sub 0.94}Cu{sub 0.05}Co{sub 0.01} Fe{sub 2}O{sub 4} thin films by metallo-organic decomposition method (MOD) using spin coating technique. The thin films were analyzed by X-ray diffractometer (XRD) and Atomic force microscope (AFM) for structural studies. The XRD patterns confirmed the ferrite phase of thin films. From AFM, we analyzed surface morphology, calculated grain size (GS) and root mean square roughness (RMSR). Room temperature magnetic properties were investigated by vibrating sample magnetometer (VSM).

Enhancement of electrical properties in polycrystalline BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Yun, Kwi Young; Ricinschi, Dan; Kanashima, Takeshi; Okuyama, Masanori

2006-11-01

Ferroelectric BiFeO3 thin films were grown on Pt /TiO2/SiO2/Si substrates by pulsed-laser deposition. From the x-ray diffraction analysis, the BiFeO3 thin films consist of perovskite single phase, and the crystal structure shows the tetragonal structure with a space group P4mm. The BiFeO3 thin films show enhanced electrical properties with low leakage current density value of ˜10-4A /cm2 at a maximum applied voltage of 31V. This enhanced electrical resistivity allowed the authors to obtain giant ferroelectric polarization values such as saturation polarizations of 110 and 166μC/cm2 at room temperature and 80K, respectively.

The promise of solution-processed Fe 2GeS 4 thin films in iron chalcogenide photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Mimi; Berg, Dominik M.; Hwang, Po-Yu

The olivine Fe 2GeS 4, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe 2GeS 4 precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe 2GeS 4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe 2GeS 4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe 2GeS 4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe 2GeS 4 thin films as the sole absorber in a solution-based solarmore » cell, open-circuit voltages of 361 mV are observed, while the use of the Fe 2GeS 4 films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe 2GeS 4.« less

The promise of solution-processed Fe 2GeS 4 thin films in iron chalcogenide photovoltaics

DOE PAGES

Liu, Mimi; Berg, Dominik M.; Hwang, Po-Yu; ...

2018-02-06

The olivine Fe 2GeS 4, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe 2GeS 4 precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe 2GeS 4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe 2GeS 4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe 2GeS 4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe 2GeS 4 thin films as the sole absorber in a solution-based solarmore » cell, open-circuit voltages of 361 mV are observed, while the use of the Fe 2GeS 4 films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe 2GeS 4.« less

Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, Sehun; Kang, Jong-Hoon; Oh, Myeong Jun

Fabrication of epitaxial FeSe xTe 1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T c) by more than ~40% than their bulk T c. Intriguingly, T c enhancement in FeSe xTe 1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T c enhancement have been reported, but they remain controversial in universally explaining the T c improvement in the FeSe xTe 1-x films. In this report, we demonstrate that the controversies over the mechanism of T c enhancement are due to the abnormalmore » changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T c enhancement in FeSe 0.5Te 0.5 thin films is caused by a remarkable increase of Se content. Although our FeSe xTe 1-x thin films were fabricated via PLD using a Fe 0.94Se 0.45Te 0.55 target, the precisely measured composition indicates a Se-rich FeSe xTe 1-x (0.6 < x < 0.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSe xTe 1-x, based on first principle calculations.« less

Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

DOE PAGES

Seo, Sehun; Kang, Jong-Hoon; Oh, Myeong Jun; ...

2017-08-30

Fabrication of epitaxial FeSe xTe 1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T c) by more than ~40% than their bulk T c. Intriguingly, T c enhancement in FeSe xTe 1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T c enhancement have been reported, but they remain controversial in universally explaining the T c improvement in the FeSe xTe 1-x films. In this report, we demonstrate that the controversies over the mechanism of T c enhancement are due to the abnormalmore » changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T c enhancement in FeSe 0.5Te 0.5 thin films is caused by a remarkable increase of Se content. Although our FeSe xTe 1-x thin films were fabricated via PLD using a Fe 0.94Se 0.45Te 0.55 target, the precisely measured composition indicates a Se-rich FeSe xTe 1-x (0.6 < x < 0.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSe xTe 1-x, based on first principle calculations.« less

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

NASA Astrophysics Data System (ADS)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Formation of pyrite (FeS{sub 2}) thin films by thermal sulfurization of dc magnetron sputtered iron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soukup, R. J.; Prabukanthan, P.; Ianno, N. J.

2011-01-15

Iron films deposited by direct current magnetron sputtering onto glass substrates were converted into FeS{sub 2} films by thermal sulfurization. Experiments were carried out to optimize the sulfurization process, and the formation of FeS{sub 2} thin films was investigated under different annealing temperatures and times. High quality FeS{sub 2} films were fabricated using this process, and single phase pyrite films were obtained after sulfurization in a sulfur and nitrogen atmosphere at 450 deg. C for 1 h. Film crystallinity and phase identification were determined by using x-ray diffraction. The cubic phase pyrite films prepared were p-type, and scanning electron microscopymore » studies exhibited a homogeneous surface of pyrite. The authors have found that the best Ohmic contact for their pyrite thin films, using inexpensive metals, was Ni. The following were chosen for the study: Al, Mo, Fe, and Ni, and the one that led to the lowest resistance, 333 {Omega}, was Ni.« less

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

PubMed Central

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-01-01

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films.

PubMed

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-12-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu 1 - x Fe x O 3 - δ epitaxial thin films (x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu 1 - x Fe x O 3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR (~36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies (δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr 1 - x La x )(Ru 1 - x Fe x )O 3 . These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu 1 - x Fe x O 3 - δ thin films.

Polycrystalline BiFeO{sub 3} thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogle, K. A., E-mail: kashinath.bogle@gmail.com; Narwade, R. D.; Mahabole, M. P.

2016-05-06

We are reporting photosensitivity property of BiFeO{sub 3} thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO{sub 3}/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

DOE PAGES

Jensen, K. M.Ø.; Blichfeld, A. B.; Bauers, S. R.; ...

2015-07-05

By means of normal incidence, high flux and high energy x-rays, we have obtained total scattering data for Pair Distribution Function (PDF) analysis from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. We illustrate the ‘tfPDF’ method through studies of as depositedmore » (i.e. amorphous) and crystalline FeSb 3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb 3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb 3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb 6 octahedra with motifs highly resembling the local structure in crystalline FeSb 3. Analysis of the amorphous structure allows predicting whether the final crystalline product will form the FeSb 3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.« less

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

PubMed Central

Jensen, Kirsten M. Ø.; Blichfeld, Anders B.; Bauers, Sage R.; Wood, Suzannah R.; Dooryhée, Eric; Johnson, David C.; Iversen, Bo B.; Billinge, Simon J. L.

2015-01-01

By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF) analysis have been obtained from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The ‘tfPDF’ method is illustrated through studies of as-deposited (i.e. amorphous) and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films. PMID:26306190

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Gölden, D.; Hildebrandt, E.; Alff, L.

2017-01-01

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

DTIC Science & Technology

2016-09-01

AFRL-RX-WP-JA-2017-0140 NON-VOLATILE FERROELECTRIC SWITCHING OF FERROMAGNETIC RESONANCE IN NIFE/PLZT MULTIFERROIC THIN FILM ...OF FERROMAGNETIC RESONANCE IN NIFE/PLZT MULTIFERROIC THIN FILM HETEROSTRUCTURES (POSTPRINT) 5a. CONTRACT NUMBER FA8650-14-C-5706 5b. GRANT... films , where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the

Significant role of antiferromagnetic GdFeO3 on multiferroism of bilayer thin films

NASA Astrophysics Data System (ADS)

Shah, Jyoti; Bhatt, Priyanka; Dayas, K. Diana Diana; Kotnala, R. K.

2018-02-01

Inversion of BaTiO3 and GdFeO3 thin films in bilayer configuration has been deposited by pulsed laser deposition technique. A significant effect of strain on thin film has been observed by X-ray diffraction analysis. Tensile strain of 1.04% and 0.23% has been calculated by X-ray diffraction results. Higher polarization value 70.4 μC cm-2 has been observed by strained BaTiO3 film in GdFeO3/BaTiO3 bilayer film. Strained GdFeO3 film in BaTiO3/GdFeO3 bilayer configuration exhibited ferromagnetic behaviour showed maximum magnetization value of 50 emu gm-1. Magnetoelectric coupling coefficient of bilayer films have been carried out by dynamic method. Room temperature magnetoelectric coupling 2500 mV cm-1-Oe has been obtained for BaTiO3/GdFeO3 bilayer film. The high ME coupling of the BaTiO3/GdFeO3 bilayer film reveals strong interfacial coupling between ferroelectric and ferromagnetic dipoles. On magnetoelectric coupling coefficient effect of ferromagnetic GdFeO3 layer has a significant role. Such high value of ME coupling may be useful in realization of magnetoelectric RAM (MeRAM) application.

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

NASA Astrophysics Data System (ADS)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

Multiple resonance peaks of FeCo thin films with NiFe underlayer

NASA Astrophysics Data System (ADS)

Zhong, Xiaoxi; Soh, Wee Tee; Phuoc, Nguyen N.; Liu, Ying; Ong, C. K.

2015-01-01

Under zero external magnetic fields, single-layer FeCo thin films exhibit no ferromagnetic resonance (FMR) peaks, while multiple FMR peaks were obtained by growing FeCo thin films on NiFe underlayers with various thicknesses up to 50 nm. Comprehensive investigations of the dynamic magnetic properties and origin of the peaks were conducted through measurements of microwave permeability via a shorted microstrip perturbation technique. Through fitted values of saturation magnetization Ms, uniaxial anisotropy HKsta, and rotatable anisotropy HKrot extracted from the FMR experiments, it was found that two of the three resonance peaks originate from FeCo, and the third from NiFe. The two magnetic phases of FeCo grains are found to have different values of HKrot and explained by the exchange interaction between FeCo and NiFe grains.

Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

NASA Astrophysics Data System (ADS)

Fu, Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Jürgen

2006-12-01

FeS polycrystalline thin films were prepared on float glass at 500°C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360to600°C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

Superconducting properties of Ba(Fe1-xNix)2As2 thin films in high magnetic fields

NASA Astrophysics Data System (ADS)

Richter, Stefan; Kurth, Fritz; Iida, Kazumasa; Pervakov, Kirill; Pukenas, Aurimas; Tarantini, Chiara; Jaroszynski, Jan; Hänisch, Jens; Grinenko, Vadim; Skrotzki, Werner; Nielsch, Kornelius; Hühne, Ruben

2017-01-01

We report on the electrical transport properties of epitaxial Ba(Fe1-xNix)2As2 thin films grown by pulsed laser deposition in static magnetic fields up to 35 T. The thin film shows a critical temperature of 17.2 K and a critical current density of 5.7 × 105 A/cm2 in self field at 4.2 K, while the pinning is dominated by elastic pinning at two-dimensional nonmagnetic defects. Compared to the single-crystal data, we find a higher slope of the upper critical field for the thin film at a similar doping level and a small anisotropy. Also, an unusual small vortex liquid phase was observed at low temperatures, which is a striking difference to Co-doped BaFe2As2 thin films.

Ferroelectric and magnetic properties of Aurivillius Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Tingting, E-mail: jia.tingting@nims.go.jp; Kimura, Hideo, E-mail: KIMURA.Hideo@nims.go.jp; Cheng, Zhenxiang

2015-11-15

Aurivillius Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3} (m = 4, 5, 6) thin films have been deposited by a pulsed laser deposition system. The x-ray diffraction patterns indicate the formation of orthorhombic phase. The remanent polarization (2P{sub r}) of Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3} thin films is decreased with the m-number. Positive-up-negative-down measurements indicate the presence of ferroelectric (FE) polarization in as-obtained thin films. Piezoresponse force microscopy investigations confirm the existence of FE domains and the switchable polarization. Weak magnetic moment is detected in the Aurivillius films at room temperature. The present work suggests the possibility of Aurivillius Bi{sub m+1}Ti{sub 3}Fe{sub m−3}O{sub 3m+3}more » (m = 4, 5, 6) materials as potential room-temperature multiferroics.« less

Superparamagnetic behavior of Fe70Dy30 granular thin film

NASA Astrophysics Data System (ADS)

Mekala, Laxman; Muhammed Shameem P., V.; Kumar, M. Senthil

2018-04-01

In the present study, the structural and magnetic properties of the Fe70Dy30 thin films are investigated. The Fe70Dy30 thin film with a thickness of 250 Å is fabricated using a dc magnetron sputtering system. Structural and temperature dependent magnetic properties indicate the granular nature of the film. The nonsaturation of the magnetization curves even at high fields of 50 kOe and the obtained very low coercivity in the temperature range 50 - 300 K reveal that films are superparamagnetic (SPM). The decreasing blocking temperature (Tb) with increasing an external magnetic field in temperature dependent magnetization curves are exposed qualitatively.

Molecular and electronic structure of thin films of protoporphyrin(IX)Fe(III)Cl

NASA Astrophysics Data System (ADS)

Snyder, Shelly R.; White, Henry S.

1991-11-01

Electrochemical, scanning tunneling microscopy (STM), and tunneling spectroscopy studies of the molecular and electronic properties of thin films of protoporphyrin(IX)Fe(III)Cl (abbreviated as PP(IX)Fe(III)Cl) on highly oriented pyrolytic graphite (HOPG) electrodes are reported. PP(IX)Fe(III)Cl films are prepared by two different methods: (1) adsorption, yielding an electrochemically-active film, and (2) irreversible electrooxidative polymerization, yielding an electrochemically-inactive film. STM images, in conjunction with electro-chemical results, indicate that adsorption of PP(IX)Fe(III)Cl from aqueous solutions onto freshly cleaved HOPG results in a film comprised of molecular aggregates. In contrast, films prepared by irreversible electrooxidative polymerization of PP(IX)Fe(III)Cl have a denser, highly structured morphology, including what appear to be small pinholes (approx. 50A diameter) in an otherwise continuous film.

Magneto-optical characterizations of FeTe₀̣₅Se₀̣₅ thin films with critical current density over 1 MA/cm²

DOE PAGES

Sun, Yue; Li, Qiang; Tsuchiya, Yuji; ...

2014-12-03

We performed magneto-optical (MO) measurements on FeTe₀̣₅Se₀̣₅ thin films grown on LaAlO₃ (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature T c ~19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density J c ~ 3 - 4 x 10⁶ A/cm² at 5 K was obtained. In this study, magnetic flux penetration measurement reveals that the current is almost isotropically distributed in the two thin films. Compared withmore » bulk crystals, FeTe₀̣₅Se₀̣₅ thin film demonstrates not only higher T c, but also much larger J c, which is attractive for applications.« less

Three-Dimensional, Fibrous Lithium Iron Phosphate Structures Deposited by Magnetron Sputtering.

PubMed

Bünting, Aiko; Uhlenbruck, Sven; Sebold, Doris; Buchkremer, H P; Vaßen, R

2015-10-14

Crystalline, three-dimensional (3D) structured lithium iron phosphate (LiFePO4) thin films with additional carbon are fabricated by a radio frequency (RF) magnetron-sputtering process in a single step. The 3D structured thin films are obtained at deposition temperatures of 600 °C and deposition times longer than 60 min by using a conventional sputtering setup. In contrast to glancing angle deposition (GLAD) techniques, no tilting of the substrate is required. Thin films are characterized by X-ray diffraction (XRD), Raman spectrospcopy, scanning electron microscopy (SEM), cyclic voltammetry (CV), and galvanostatic charging and discharging. The structured LiFePO4+C thin films consist of fibers that grow perpendicular to the substrate surface. The fibers have diameters up to 500 nm and crystallize in the desired olivine structure. The 3D structured thin films have superior electrochemical properties compared with dense two-dimensional (2D) LiFePO4 thin films and are, hence, very promising for application in 3D microbatteries.

Spray deposited MnFe2O4 thin films for detection of ethanol and acetone vapors

NASA Astrophysics Data System (ADS)

Nagarajan, V.; Thayumanavan, A.

2018-01-01

Spinel MnFe2O4 films were synthesized with the help of spray pyrolysis technique. The morphology study shows fine crushed sand grain morphology of the film. The structural investigation verifies the polycrystalline nature of prepared MnFe2O4 films, which possess the spinel structure. Crystalline size is found to be around 23.5 nm-37.4 nm morphology analyses. Energy dispersive spectroscopy validates the presence of oxygen, iron and manganese in MnFe2O4 film. The prepared MnFe2O4 film is extremely sensitive towards ethanol molecules at 300 K. The electrical resistance of MnFe2O4 thin film decreases quickly when ethanol and acetone vapor molecules are adsorbed on base material. The synthesized MnFe2O4 film is also highly sensitive towards acetone molecules at ambient temperature. The selectivity, sensing response, stability and recovery time of MnFe2O4 film towards acetone and ethanol detection are analyzed in the present work.

Method for measurement of diffusivity: Calorimetric studies of Fe/Ni multilayer thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, JX; Barmak, K

2015-07-15

A calorimetric method for the measurement of diffusivity in thin film multilayers is introduced and applied to the Fe Ni system. Using this method, the diffusivity in [Fe (25 nm)/Ni (25 nm)](20) multilayer thin films is measured as 4 x 10(-3)exp(-1.6 +/- 0.1 eV/ k(B)T) cm(2)/s, respectively. The diffusion mechanism in the multilayers and its relevance to laboratory synthesis of L1(0) ordered FeNi are discussed. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Coercivity scaling in antidot lattices in Fe, Ni, and NiFe thin films

NASA Astrophysics Data System (ADS)

Gräfe, Joachim; Schütz, Gisela; Goering, Eberhard J.

2016-12-01

Antidot lattices can be used to artificially engineer magnetic properties in thin films, however, a conclusive model that describes the coercivity enhancement in this class of magnetic nano-structures has so far not been found. We prepared Fe, Ni, and NiFe thin films and patterned each with 21 square antidot lattices with different geometric parameters and measured their hysteretic behavior. On the basis of this extensive dataset we are able to provide a model that can describe both the coercivity scaling over a wide range of geometric lattice parameters and the influence of different materials.

Effect of Fe incorporation on the optical behavior of ZnO thin films prepared by sol-gel derived spin coating techniques

NASA Astrophysics Data System (ADS)

Rakkesh, R. Ajay; Malathi, R.; Balakumar, S.

2013-02-01

In this work, Fe doped Zinc Oxide (ZnO) thin films were fabricated on the glass substrate by sol-gel derived spin coating technique. X-ray Diffraction studies revealed that the obtained pure and Fe doped ZnO thin films were in the wurtzite and spinel phase respectively. The three well defined Raman lines at 432, 543 and 1091 cm-1 also confirmed the lattice structure of the ZnO thin film has wurtzite symmetry. While doping Fe atoms in the ZnO, there was a significant change in the phase from wurtzite to spinel structure; owing to Fe (III) ions being incorporated into the lattice through substitution of Zn (II) ions. Room temperature PL spectra showed that the role of defect mediated red emissions at 612 nm was due to radial recombination of a photogenerated hole with an electron that belongs to the Fe atoms, which were discussed in detail.

Room temperature ferromagnetism in BiFe1-xMnxO3 thin film induced by spin-structure manipulation

NASA Astrophysics Data System (ADS)

Shigematsu, Kei; Asakura, Takeshi; Yamamoto, Hajime; Shimizu, Keisuke; Katsumata, Marin; Shimizu, Haruki; Sakai, Yuki; Hojo, Hajime; Mibu, Ko; Azuma, Masaki

2018-05-01

The evolution of crystal structure, spin structure, and macroscopic magnetization of manganese-substituted BiFeO3 (BiFe1-xMnxO3), a candidate for multiferroic materials, were investigated on bulk and epitaxial thin-film. Mn substitution for Fe induced collinear antiferromagnetic spin structure around room temperature by destabilizing the cycloidal spin modulation which prohibited the appearance of net magnetization generated by Dzyaloshinskii-Moriya interaction. For the bulk samples, however, no significant signal of ferromagnetism was observed because the direction of the ordered spins was close to parallel to the electric polarization so that spin-canting did not occur. On the contrary, BiFe1-xMnxO3 thin film on SrTiO3 (001) had a collinear spin structure with the spin direction perpendicular to the electric polarization at room temperature, where the appearance of spontaneous magnetization was expected. Indeed, ferromagnetic hysteresis behavior was observed for BiFe0.9Mn0.1O3 thin film.

Characterization of α-Fe-Free Heteroepitaxial NdFe12- x Ti x Thin-Film Materials with a Novel Cubic Laves Fe2Ti Phase

NASA Astrophysics Data System (ADS)

Hadorn, Jason Paul; Hirayama, Yusuke; Ohkubo, Tadakatsu

2018-01-01

Thin films with compositions of NdFe12 and NdFe11Ti1 were fabricated on W-buffered MgO(001) substrates of varying roughness. In this study, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films microstructurally, chemically, and crystallographically. This study revealed successful heteroepitaxial synthesis of the tetragonal NdFe12 and NdFe12- x Ti x phases in the Ti-free and Ti-containing films, respectively, both with surface-normal c-axis orientation. It also revealed the presence of other phases within the magnetic layer. The NdFe12 films contained many α-Fe particles, which preferentially precipitated at locally rough regions of the W-buffer interface. The NdFe11Ti1 film showed the ubiquitous presence of an Fe2Ti phase, which covered most of the buffer thereby preventing the formation of α-Fe. This phase was determined to have a novel Cu2Mg-type cubic Laves ( C15) crystal structure with fourfold interfacial symmetry, good coherency, and a low mismatch with the W-buffer, thus rendering itself as being an ideal interface for the heteroepitaxial synthesis of NdFe12- x Ti x crystals. It is proposed that successful application of a cubic Fe2Ti underlayer on W can contribute to the development of a fabrication strategy for NdFe12 thin films without the presence of soft magnetic α-Fe.

A Nanocrystalline Fe2O3 Film Anode Prepared by Pulsed Laser Deposition for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Teng, Xiaoling; Qin, Youzhi; Wang, Xia; Li, Hongsen; Shang, Xiantao; Fan, Shuting; Li, Qiang; Xu, Jie; Cao, Derang; Li, Shandong

2018-02-01

Nanocrystalline Fe2O3 thin films are deposited directly on the conduct substrates by pulsed laser deposition as anode materials for lithium-ion batteries. We demonstrate the well-designed Fe2O3 film electrodes are capable of excellent high-rate performance (510 mAh g- 1 at high current density of 15,000 mA g- 1) and superior cycling stability (905 mAh g- 1 at 100 mA g- 1 after 200 cycles), which are among the best reported state-of-the-art Fe2O3 anode materials. The outstanding lithium storage performances of the as-synthesized nanocrystalline Fe2O3 film are attributed to the advanced nanostructured architecture, which not only provides fast kinetics by the shortened lithium-ion diffusion lengths but also prolongs cycling life by preventing nanosized Fe2O3 particle agglomeration. The electrochemical performance results suggest that this novel Fe2O3 thin film is a promising anode material for all-solid-state thin film batteries.

Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

NASA Astrophysics Data System (ADS)

Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

2015-04-01

Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

Reduced temperature-dependent thermal conductivity of magnetite thin films by controlling film thickness

PubMed Central

2014-01-01

We report on the out-of-plane thermal conductivities of epitaxial Fe3O4 thin films with thicknesses of 100, 300, and 400 nm, prepared using pulsed laser deposition (PLD) on SiO2/Si substrates. The four-point probe three-omega (3-ω) method was used for thermal conductivity measurements of the Fe3O4 thin films in the temperature range of 20 to 300 K. By measuring the temperature-dependent thermal characteristics of the Fe3O4 thin films, we realized that their thermal conductivities significantly decreased with decreasing grain size and thickness of the films. The out-of-plane thermal conductivities of the Fe3O4 films were found to be in the range of 0.52 to 3.51 W/m · K at 300 K. For 100-nm film, we found that the thermal conductivity was as low as approximately 0.52 W/m · K, which was 1.7 to 11.5 order of magnitude lower than the thermal conductivity of bulk material at 300 K. Furthermore, we calculated the temperature dependence of the thermal conductivity of these Fe3O4 films using a simple theoretical Callaway model for comparison with the experimental data. We found that the Callaway model predictions agree reasonably with the experimental data. We then noticed that the thin film-based oxide materials could be efficient thermoelectric materials to achieve high performance in thermoelectric devices. PMID:24571956

The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

NASA Astrophysics Data System (ADS)

Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

2016-04-01

Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

PubMed Central

Seemen, Helina; Ritslaid, Peeter; Rähn, Mihkel; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Dueñas, Salvador; Castán, Helena; García, Héctor

2018-01-01

Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0. PMID:29441257

Guest-Induced Two-Way Structural Transformation in a Layered Metal-Organic Framework Thin Film.

PubMed

Haraguchi, Tomoyuki; Otsubo, Kazuya; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2016-12-28

Fabrication of thin films made of metal-organic frameworks (MOFs) has been intensively pursued for practical applications that use the structural response of MOFs. However, to date, only physisorption-induced structural response has been studied in these films. Chemisorption can be expected to provide a remarkable structural response because of the formation of bonds between guest molecules and reactive metal sites in host MOFs. Here, we report that chemisorption-induced two-way structural transformation in a nanometer-sized MOF thin film. We prepared a two-dimensional layered-type MOF Fe[Pt(CN) 4 ] thin film using a step-by-step approach. Although the as-synthesized film showed poor crystallinity, the dehydrated form of this thin film had a highly oriented crystalline nature (Film-D) as confirmed by synchrotron X-ray diffraction (XRD). Surprisingly, under water and pyridine vapors, Film-D showed chemisorption-induced dynamic structural transformations to Fe(L) 2 [Pt(CN) 4 ] thin films [L = H 2 O (Film-H), pyridine (Film-P)], where water and pyridine coordinated to the open Fe 2+ site. Dynamic structural transformations were also confirmed by in situ XRD, sorption measurement, and infrared reflection absorption spectroscopy. This is the first report of chemisorption-induced dynamic structural response in a MOF thin film, and it provides useful insights, which would lead to future practical applications of MOFs utilizing chemisorption-induced structural responses.

Strain induced superconductivity in the parent compound BaFe2As2

NASA Astrophysics Data System (ADS)

Engelmann, J.; Grinenko, V.; Chekhonin, P.; Skrotzki, W.; Efremov, D. V.; Oswald, S.; Iida, K.; Hühne, R.; Hänisch, J.; Hoffmann, M.; Kurth, F.; Schultz, L.; Holzapfel, B.

2013-12-01

The discovery of superconductivity with a transition temperature, Tc, up to 65 K in single-layer FeSe (bulk Tc=8 K) films grown on SrTiO3 substrates has attracted special attention to Fe-based thin films. The high Tc is a consequence of the combined effect of electron transfer from the oxygen-vacant substrate to the FeSe thin film and lattice tensile strain. Here we demonstrate the realization of superconductivity in the parent compound BaFe2As2 (no bulk Tc) just by tensile lattice strain without charge doping. We investigate the interplay between strain and superconductivity in epitaxial BaFe2As2 thin films on Fe-buffered MgAl2O4 single crystalline substrates. The strong interfacial bonding between Fe and the FeAs sublattice increases the Fe-Fe distance due to the lattice misfit, which leads to a suppression of the antiferromagnetic spin density wave and induces superconductivity with bulk Tc≈10 K. These results highlight the role of structural changes in controlling the phase diagram of Fe-based superconductors.

Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

PubMed

Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

2014-10-14

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

Aging in Thin Metallic Films.

DTIC Science & Technology

1978-03-01

NSWC/WOL TR 77-178 SUMMARY This raport gives measurements of changes in the magnetic properties of thin films due to oxidation. Evaporated NiFe ...Fi lm An i sotropy NiFe Thi n Fi lm Th in Fi lm Magnetos triction Magnetic Fi lm Aging - Magnetic Film Anneal ing — ~~~~. A BSTRACT CenhSnu. on r.v...rs• .Id. I nsc•ss y ond Idsnhl~ b block me.eb.r) _ . .—~~ Low magnetostriction NiFe and NiFe based’ ternary films 220A to 340A thick were prepared by

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

PubMed Central

Wang, Yi-Guang; Liu, Qiu-Xiang; Jiang, Yan-Ping; Jiang, Li-Li

2017-01-01

Sr(Ti1−xFex)O3−δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFex)O3−δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the ferroelectric test system, and the vibrating sample magnetometer (VSM). After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr) of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFex)O3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFex)O3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1)O3−δ thin films were also discussed in detail. PMID:28885579

Magnetic and electrical characterization of nickel-rich NiFe thin films synthesized by atomic layer deposition and subsequent thermal reduction.

PubMed

Espejo, A P; Zierold, R; Gooth, J; Dendooven, J; Detavernier, C; Escrig, J; Nielsch, K

2016-08-26

Nickel-rich NiFe thin films (Ni92Fe8, Ni89Fe11 and Ni83Fe17) were prepared by combining atomic layer deposition (ALD) with a subsequent thermal reduction process. In order to obtain Ni x Fe1-x O y films, one ALD supercycle was performed according to the following sequence: m NiCp2/O3, with m = 1, 2 or 3, followed by one FeCp2/O3 cycle. The supercycle was repeated n times. The thermal reduction process in hydrogen atmosphere was investigated by in situ x-ray diffraction studies as a function of temperature. The metallic nickel iron alloy thin films were investigated and characterized with respect to crystallinity, morphology, resistivity, and magnetism. As proof-of-concept magnetic properties of an array of Ni83Fe17, close to the perfect Permalloy stoichiometry, nanotubes and an isolated tube were investigated.

Magnetic and electrical characterization of nickel-rich NiFe thin films synthesized by atomic layer deposition and subsequent thermal reduction

NASA Astrophysics Data System (ADS)

Espejo, A. P.; Zierold, R.; Gooth, J.; Dendooven, J.; Detavernier, C.; Escrig, J.; Nielsch, K.

2016-08-01

Nickel-rich NiFe thin films (Ni92Fe8, Ni89Fe11 and Ni83Fe17) were prepared by combining atomic layer deposition (ALD) with a subsequent thermal reduction process. In order to obtain Ni x Fe1-x O y films, one ALD supercycle was performed according to the following sequence: m NiCp2/O3, with m = 1, 2 or 3, followed by one FeCp2/O3 cycle. The supercycle was repeated n times. The thermal reduction process in hydrogen atmosphere was investigated by in situ x-ray diffraction studies as a function of temperature. The metallic nickel iron alloy thin films were investigated and characterized with respect to crystallinity, morphology, resistivity, and magnetism. As proof-of-concept magnetic properties of an array of Ni83Fe17, close to the perfect Permalloy stoichiometry, nanotubes and an isolated tube were investigated.

Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

PubMed

Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

2009-11-09

Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

NASA Astrophysics Data System (ADS)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-10-01

In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

Optical and structural properties of cobalt-permalloy slanted columnar heterostructure thin films

NASA Astrophysics Data System (ADS)

Sekora, Derek; Briley, Chad; Schubert, Mathias; Schubert, Eva

2017-11-01

Optical and structural properties of sequential Co-column-NiFe-column slanted columnar heterostructure thin films with an Al2O3 passivation coating are reported. Electron-beam evaporated glancing angle deposition is utilized to deposit the sequential multiple-material slanted columnar heterostructure thin films. Mueller matrix generalized spectroscopic ellipsometry data is analyzed with a best-match model approach employing the anisotropic Bruggeman effective medium approximation formalism to determine bulk-like and anisotropic optical and structural properties of the individual Co and NiFe slanted columnar material sub-layers. Scanning electron microscopy is applied to image the Co-NiFe sequential growth properties and to verify the results of the ellipsometric analysis. Comparisons to single-material slanted columnar thin films and optically bulk solid thin films are presented and discussed. We find that the optical and structural properties of each material sub-layer of the sequential slanted columnar heterostructure film are distinct from each other and resemble those of their respective single-material counterparts.

Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

NASA Astrophysics Data System (ADS)

Katiyar, R. K.; Sharma, Y.; Barrionuevo, D.; Kooriyattil, S.; Pavunny, S. P.; Young, J. S.; Morell, G.; Weiner, B. R.; Katiyar, R. S.; Scott, J. F.

2015-02-01

Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ˜0.20 V and ˜1.35 mA/cm2, respectively. The band gap of the films was determined to be ˜2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PV properties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

2013-08-07

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the filmsmore » are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.« less

Novel behaviors of anomalous Hall effect in TbFeCo ferrimagnetic thin films

NASA Astrophysics Data System (ADS)

Ando, Ryo; Komine, Takashi; Sato, Shiori; Kaneta, Shingo; Hara, Yoshiaki

2018-05-01

We investigate the temperature dependence and the thickness dependence of anomalous Hall effect (AHE) of TbFeCo ultra-thin films under high magnetic field. The sign change on temperature dependence of AHE in 20nm-thick TbFeCo film with rare-earth (RE) rich composition was observed. The AHE sign at low temperature is negative while it gradually becomes positive as the temperature increases. Moreover, the AHE sign for 5nm-thick TbFeCo film remains positive while that for 50nm-thick TbFeCo film remains negative at temperature in the range from 5 K to 400 K. The similar thickness dependence of AHE in TM-rich samples was also observed. From the mean-field approximation, the sign change temperature in AHE is related to the compensation temperature and the existence of interfacial region, which has the TM-rich composition and the weak anisotropy. Therefore, We clarified that the novel behavior of AHE sign changes in TbFeCo thin films with different thickness can be explained by the interfacial layer with weak anisotropy and two phase model.

Epitaxial Fe16N2 thin film on nonmagnetic seed layer

NASA Astrophysics Data System (ADS)

Hang, Xudong; Zhang, Xiaowei; Ma, Bin; Lauter, Valeria; Wang, Jian-Ping

2018-05-01

Metastable α″ -Fe16N2 has attracted much interest as a candidate for rare-earth-free hard magnetic materials. We demonstrate that Fe16N2 thin films were grown epitaxially on Cr seed layers with MgO (001) substrates by facing-target sputtering. Good crystallinity with the epitaxial relation MgO (001 )[110 ] ∥ Cr (001 )[100 ] ∥ Fe16N2 (001 )[100 ] was obtained. The chemical order parameter, which quantifies the degree of N ordering in the Fe16N2 (the N-disordered phase is α' -Fe8N martensite), reaches 0.75 for Cr-seeded samples. Cr has a perfect lattice constant match with Fe16N2, and no noticeable strain can be assigned to Fe16N2. The intrinsic saturation magnetization of this non-strained Fe16N2 thin film at room temperature is determined to be 2.31 T by polarized neutron reflectometry and confirmed with vibrating sample magnetometry. Our work provides a platform to directly study the magnetic properties of high purity Fe16N2 films with a high order parameter.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pawar, C. S., E-mail: charudutta-p@yahoo.com; Gujar, M. P.; Mathe, V. L.

Nano crystalline Nickel Zinc ferrite (Ni{sub 0.25}Zn{sub 0.75}Fe{sub 2}O{sub 4}) thin films were synthesized by Sol Gel method for gas response. The phase and microstructure of the obtained Ni{sub 0.25}Zn{sub 0.75}Fe{sub 2}O{sub 4} thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The nanostructured Ni{sub 0.25}Zn{sub 0.75}Fe{sub 2}O{sub 4} thin film shows single spinel phase. Magnetic study was obtained with the help of VSM. The effects of working temperature on the gas response were studied. The results reveal that the Ni{sub 0.25}Zn{sub 0.75}Fe{sub 2}O{sub 4} thin film gas sensor shows good selectivity to chlorine gas at roommore » temperature. The sensor shows highest sensitivity (∼50%) at room temperature, indicating its application in detecting chlorine gas at room temperature in the future.« less

Ultra-high power capabilities in amorphous FePO4 thin films

NASA Astrophysics Data System (ADS)

Gandrud, Knut B.; Nilsen, Ola; Fjellvåg, Helmer

2016-02-01

Record breaking electrochemical properties of FePO4 have been found through investigation of the thickness dependent electrochemical properties of amorphous thin film electrodes. Atomic layer deposition was used for production of thin films of amorphous FePO4 with highly accurate thickness and topography. Electrochemical characterization of these thin film electrodes revealed that the thinner electrodes behave in a pseudocapacitive manner even at high rates of Li+ de/intercalation, which enabled specific powers above 1 MW kg-1 FePO4 to be obtained with minimal capacity loss. In addition, a self-enhancing kinetic effect was observed during cycling enabling more than 10,000 cycles at current rates approaching that of a supercapacitor (11s charge/discharge). The current findings may open for construction of ultra-high power battery electrodes that combines the energy density of batteries with the power capabilities of supercapacitors.

Converse magnetoelectric coupling in NiFe/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} nanocomposite thin films grown on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Ming; Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000; Hu, Jiamian

2013-11-04

Multiferroic NiFe (∼30 nm)/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3}(PMN–PT, ∼220 nm) bilayered thin films were grown on common Pt/Ti/SiO{sub 2}/Si substrates by a combination of off-axis magnetron sputtering and sol-gel spin-coating technique. By using AC-mode magneto-optical Kerr effect technique, the change in the Kerr signal (magnetization) of the NiFe upon applying a low-frequency AC voltage to the PMN–PT film was in situ acquired at zero magnetic field. The obtained Kerr signal versus voltage loop essentially tracks the electromechanical strain curve of the PMN–PT thin film, clearly demonstrating a strain-mediated converse magnetoelectric coupling, i.e., voltage-modulated magnetization, in the NiFe/PMN–PT nanocomposite thin films.

Thermally induced chain orientation for improved thermal conductivity of P(VDF-TrFE) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Junnan; Tan, Aaron C.; Green, Peter F.

2017-01-01

A large increase in thermal conductivityκwas observed in a P(VDF-TrFE) thin film annealed above melting temperature due to extensive ordering of polymer backbone chains perpendicular to the substrate after recrystallization from the melt. This finding may lay out a straightforward method to improve the thin filmκof semicrystalline polymers whose chain orientation is sensitive to thermal annealing.

Improvement of perpendicular anisotropy of columnar FePt-ZrO2-C films with FePt insert layer

NASA Astrophysics Data System (ADS)

Dong, Kaifeng; Mo, Wenqin; Jin, Fang; Song, Junlei; Cheng, Weimin; Wang, Haiwei

2018-05-01

The effects of various thicknesses of FePt insert layer on the microstructure and magnetic properties of FePt-ZrO2-C thin films have been investigated. It is found that with inserting 0.4 nm FePt films between the TiON intermediate layer and FePt-ZrO2-C layer, the perpendicular anisotropy indicated by Hc⊥/Hc//ratio would increase from 4 to 13.1, suggesting the perpendicular anisotropy could be improved a lot with using FePt insert layer. Simultaneously, the FePt grains of FePt-ZrO2-C thin films maintained columnar structure and the grain isolation could also be improved in a certain degree. With further increase of the FePt insert layer thickness, although the perpendicular anisotropy was still larger than that without FePt insert layer, the grain size of the FePt-ZrO2-C films would increase and the isolation would be deteriorated.

Brillouin light scattering on Fe/Cr/Fe thin-film sandwiches

NASA Astrophysics Data System (ADS)

Kabos, P.; Patton, C. E.; Dima, M. O.; Church, D. B.; Stamps, R. L.; Camley, R. E.

1994-04-01

The aim of this work is to perform Brillouin light scattering measurements of the field and wave-vector dependencies of the frequencies of the fundamental magnetic excitations in Fe/Cr/Fe thin film sandwiches with antiferromagnetically coupled magnetic layers, correlate these results with magnetization versus field data on such films, and compare the observed dependencies with theory for low-wave number spin-wave modes in sandwich films. The measurements were made for the in-plane static magnetic field H along the crystallographic and directions, with the in-plane wave vector k always perpendicular to H.

Reduced-temperature crystallization of thin amorphous Fe80B20 films studied via empirical modeling of extended x-ray absorption fine structure

NASA Astrophysics Data System (ADS)

Harris, V. G.; Oliver, S. A.; Ayers, J. D.; Das, B. N.; Koon, N. C.

1996-04-01

The evolution of the local atomic environment around Fe atoms in very thin (15 nm), amorphous, partially crystallized and fully crystallized films of Fe80B20 was studied using extended x-ray absorption fine structure (EXAFS) measurements. The relative atomic fraction of each crystalline phase present in the annealed samples was extracted from the Fe EXAFS data by a least-squares fitting procedure, using data collected from t-Fe3B, t-Fe2B, and α-Fe standards. The type and relative fraction of the crystallization products follows the trends previously measured in Fe80B20 melt-spun ribbons, except for the fact that crystallization temperatures are ≊200 K lower than those measured in bulk equivalents. This greatly reduced crystallization temperature may arise from the dominant role of surface nucleation sites in the crystallization of very thin amorphous films.

Unusual Ferroelectricity in Two-Dimensional Perovskite Oxide Thin Films.

PubMed

Lu, Jinlian; Luo, Wei; Feng, Junsheng; Xiang, Hongjun

2018-01-10

Two-dimensional (2D) ferroelectricity have attracted much attention due to their applications in novel miniaturized devices such as nonvolatile memories, field effect transistors, and sensors. Since most of the commercial ferroelectric (FE) devices are based on ABO 3 perovskite oxides, it is important to investigate the properties of 2D ferroelectricity in perovskite oxide thin films. Here, based on density functional theory (DFT) calculations, we find that there exist three kinds of in-plane FE states that originate from different microscopic mechanisms: (i) a proper FE state with the polarization along [110] due to the second-order Jahn-Teller effect related to the B ion with empty d-orbitals; (ii) a robust FE state with the polarization along [100] induced by the surface effect; (iii) a hybrid improper FE state with the polarization along [110] that is induced by the trilinear coupling between two rotational modes and the A-site displacement. Interestingly, the ferroelectricity in the latter two cases becomes stronger along with decreasing the thin film thickness, in contrast to the usual behavior. Moreover, the latter two FE states are compatible with magnetism since their stability does not depend on the occupation of the d-orbitals of the B-ion. These two novel 2D FE mechanisms provide new avenues to design 2D multiferroics, as we demonstrated in SrVO and CaFeO thin film cases. Our work not only reveals new physical mechanisms of 2D ferroelectricity in perovskite oxide thin films but also provides a new route to design the high-performance 2D FE and multiferroics.

Superconducting FeSe0.1Te0.9 thin films integrated on Si-based substrates

NASA Astrophysics Data System (ADS)

Huang, Jijie; Chen, Li; Li, Leigang; Qi, Zhimin; Sun, Xing; Zhang, Xinghang; Wang, Haiyan

2018-05-01

With the goal of integrating superconducting iron chalcogenides with Si-based electronics, superconducting FeSe0.1Te0.9 thin films were directly deposited on Si and SiOx/Si substrates without any buffer layer by a pulsed laser deposition (PLD) method. Microstructural characterization showed excellent film quality with mostly c-axis growth on both types of substrates. Superconducting properties (such as superconducting transition temperature T c and upper critical field H c2) were measured to be comparable to that of the films on single crystal oxide substrates. The work demonstrates the feasibility of integrating superconducting iron chalcogenide (FeSe0.1Te0.9) thin films with Si-based microelectronics.

The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

NASA Astrophysics Data System (ADS)

Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

2018-06-01

Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

Strain induced enhancement of magnetization in Ba{sub 2}FeMoO{sub 6} based heterostructure with (Ba{sub x}Sr{sub 1-x})TiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kyeong-Won; Norton, David P.; Ghosh, Siddhartha, E-mail: ghoshsid@gmail.com

2016-05-14

High quality epitaxial Ba{sub 2}FeMoO{sub 6} thin films and Ba{sub 2}FeMoO{sub 6}–(Ba{sub x}Sr{sub 1−x})TiO{sub 3} bi-layer (BL) and superlattice (SL) structures were grown via pulsed laser deposition under low oxygen pressure, and their structural, magnetic, and magneto-transport properties were examined. Superlattice and bi-layer structures were confirmed by X-ray diffraction patterns. Low temperature magnetic measurement shows that the saturation magnetization (M{sub S}) is significantly higher for SLs and almost similar or lower for BLs, when compared to phase pure Ba{sub 2}FeMoO{sub 6} thin films. The variation of the coercive field (H{sub C}) follows exact opposite trend, where BL samples have highermore » H{sub C} and SL samples have lower H{sub C} than pure Ba{sub 2}FeMoO{sub 6} thin films. Also, a significant decrease of the Curie temperature is found in both BL and SL structures compared to pure Ba{sub 2}FeMoO{sub 6} thin films. Negative magneto-resistance is seen in all the BL and SL structures as well as in pure Ba{sub 2}FeMoO{sub 6} thin films. In contrast to the magnetic properties, the magneto-transport properties do not show much variation with induced strain.« less

Electronic structure and magnetic anisotropy of L1{sub 0}-FePt thin film studied by hard x-ray photoemission spectroscopy and first-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ueda, S.; Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148; Mizuguchi, M.

2016-07-25

We have studied the electronic structure of the L1{sub 0} ordered FePt thin film by hard x-ray photoemission spectroscopy (HAXPES), cluster model, and first-principles calculations to investigate the relationship between the electronic structure and perpendicular magneto-crystalline anisotropy (MCA). The Fe 2p core-level HAXPES spectrum of the ordered film revealed the strong electron correlation in the Fe 3d states and the hybridization between the Fe 3d and Pt 5d states. By comparing the experimental valence band structure with the theoretical density of states, the strong electron correlation in the Fe 3d states modifies the valence band electronic structure of the L1{submore » 0} ordered FePt thin film through the Fe 3d-Pt 5d hybridization. These results strongly suggest that the strong electron correlation effect in the Fe 3d states and the Fe 3d-Pt 5d hybridization as well as the spin-orbit interaction in the Pt 5d states play important roles in the perpendicular MCA for L1{sub 0}-FePt.« less

Microstructure evolution and coercivity enhancement in Nd-Fe-B thin films diffusion-processed by R-Al alloys (R=Nd, Pr)

NASA Astrophysics Data System (ADS)

Xie, Yigao; Yang, Yang; Zhang, Tongbo; Fu, Yanqing; Jiang, Qingzheng; Ma, Shengcan; Zhong, Zhenchen; Cui, Weibin; Wang, Qiang

2018-05-01

Diffusion process by Nd-Al and Pr-Al alloys was compared and investigated in Nd-Fe-B thin films. Enhanced coercivity 2.06T and good squareness was obtained by using Pr85Al15 and Nd85Al15 alloys as diffusion sources. But the coercivity of diffusion-processed thin films by Pr70Al30 and Pr55Al45 alloys decreased to 2.04T and 1.82T. High ambient coercivity of 2.26T was achieved in diffusion-processed thin film by Nd70Al30 leading to an improved coercivity thermal stability because Nd2Fe14B grains were enveloped by Nd-rich phase as seen by transmission electron microscopy Nd-loss image. Meanwhile, microstructure-dependent parameters α and Neff were improved. However, high content of Al in diffusion-processed thin film by Nd55Al45 lead to degraded texture and coercivity.

Soft magnetic properties of nanocrystalline FeRuGaSi-Hf alloy films and head characteristics for the embedded thin film tape head

NASA Astrophysics Data System (ADS)

Ohmori, H.; Shoji, M.; Kobayashi, T.; Yamamoto, T.; Sugiyama, Y.; Hayashi, K.; Hono, K.

1996-04-01

The Hf-added FeRuGaSi alloy film has an amorphous structure in the as-deposited state and becomes nanocrystalline after annealing. Due to this structure change from crystalline to amorphous by the addition of Hf, soft magnetic degradation of the film deposited on the slant grooved substrate, which is necessary for the sophisticated embedded thin film (ETF) head structure, is greatly suppressed and the undesirable film stress is relieved. The FeRuGaSi-Hf alloy film has higher resistivity and permeability at high frequencies than those of sendust film, and the read/write characteristics of this alloy film show better performance than sendust film.

Surface morphology, optical, and electrochromic properties of nanostructured nickel ferrite (NiFe2O4) prepared by sol-gel method: effects of Ni/Fe molar ratios

NASA Astrophysics Data System (ADS)

Bazhan, Z.; Ghodsi, F. E.; Mazloom, J.

2016-05-01

Nanostructured nickel ferrite (NF) was prepared by the sol-gel method and calcined at 500 °C for 2 h. The effect of Ni/Fe molar ratios (0, 10, 30, 50 %) on structural, morphological, compositional, optical, and magnetic properties of samples was investigated using analytical tools. XRD patterns indicated the presence of hematite phase in the pure and 10 % NF samples. The samples of 30 and 50 % Ni/Fe molar ratios showed the formation of nickel ferrite structure. Using AFM images, power spectrum density analysis were performed for Ni/Fe with different molar ratio. Also the effect of thickness on morphology of 30 % sample was studied. The fractal dimension increases by increasing the Ni/Fe molar ratio. Optical parameters were evaluated by theoretical approach, and compositional dependence of these parameters was discussed comprehensively. Band gap narrowing was observed in nickel ferrite thin films by increasing the nickel contents from 10 to 50 %. Magnetic analysis revealed that increasing nickel content improved the saturation magnetization. Electrochemical measurements indicated that NF thin films have higher total charge density rather than Fe2O3 thin films and the ion storage capacitance of NF thin films increased by increasing the Ni/Fe content.

Morphology, structure, and magnetism of FeCo thin films electrodeposited on hydrogen-terminated Si(111) surfaces.

PubMed

Zarpellon, J; Jurca, H F; Mattoso, N; Klein, J J; Schreiner, W H; Ardisson, J D; Macedo, W A A; Mosca, D H

2007-12-15

In this work we describe the fabrication of FeCo alloy (less than 10 at% Co) thin films from aqueous ammonium sulfate solutions onto n-type Si(111) substrates using potentiostatic electrodeposition at room temperature. The incorporation of Co into the deposits tends to inhibit Fe silicide formation and to protect deposits against oxidation under air exposure. As the incorporation of Co was progressively increased, the sizes of nuclei consisting of FeCo alloy increased, leading to films with a highly oriented body-centered cubic structure with crystalline texture, where (110) planes remain preferentially oriented parallel to the film surface.

Research progress in photolectric materials of CuFeS2

NASA Astrophysics Data System (ADS)

Jing, Mingxing; Li, Jing; Liu, Kegao

2018-03-01

CuFeS2 as a photoelectric material, there are many advantages, such as high optical absorption coefficient, direct gap semiconductor, thermal stability, no photo-recession effect and so on. Because of its low price, abundant reserves and non-toxic, CuFeS2 has attracted extensive attention of scientists.Preparation method of thin film solar cells are included that Electrodeposition, sputtering, thermal evaporation, thermal spraying method, co-reduction method.In this paper, the development of CuFeS2 thin films prepared by co-reduction method and co-reduction method is introduced.In this paper, the structure and development of solar cells, advantages of CuFeS2 as solar cell material, the structure and photoelectric properties and magnetic properties of CuFeS2, preparation process analysis of CuFeS2 thin film, research and development of CuFeS2 in solar cells is included herein. Finally, the development trend of CuFeS2 optoelectronic materials is analyzed and further research directions are proposed.

Composite CuFe1 - xSnxO2/p-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Al-Sehemi, Abdullah G.; Mensah-Darkwa, K.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-06-01

CuFe1 - xSnxO2 composite thin film/p-type silicon diodes were prepared on substrate by sol-gel method (x = 0.00, 0.01, 0.03, 0.05, 0.07). The structure of CuFe1 - xSnxO2 composite thin films was studied using XRD analysis and films exhibited amorphous behavior. The elemental compositions and surface morphology of the films were characterized using SEM and EDX. EDX results confirmed the presence of the compositional elements. The optical band gap of CuFe1 - xSnxO2 composite thin films was determined using the optic spectra. The optical band gaps of the CuFe1 - xSnxO2 composite thin films were calculated using optical data and were found to be 3.75, 3.78, 3.80, 3.85 and 3.83 eV for x = 0.00, 0.01, 0.03, 0.05 and 0.07, respectively. The photoresponse and electrical properties of the Al/CuFe1 - xSnxO2/p-Si/Al diode were studied. The barrier height and ideality factor were determined to be averagely 0.67 eV and 2.6, respectively. The electrical and photoresponse characteristics of the diodes have been investigated under dark and solar light illuminations, respectively. The interface states were used to explain the results obtained in present study. CuFe1 - xSnxO2 photodiodes exhibited a high photoresponsivity to be used in optoelectronic applications.

Synthesizing skyrmion bound pairs in Fe-Gd thin films

DOE PAGES

Lee, J. C. T.; Chess, J. J.; Montoya, S. A.; ...

2016-07-11

Here, we show that properly engineered amorphous Fe-Gd alloy thin films with perpendicular magnetic anisotropy exhibit bound pairs of like-polarity, opposite helicity skyrmions at room temperature. Magnetic mirror symmetry planes present in the stripe phase, instead of chiral exchange, determine the internal skyrmion structure and the net achirality of the skyrmion phase. Our study shows that stripe domain engineering in amorphous alloy thin films may enable the creation of skyrmion phases with technologically desirable properties.

Growth of L1{sub 0}-ordered crystal in FePt and FePd thin films on MgO(001) substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Futamoto, Masaaki, E-mail: futamoto@elect.chuo-u.ac.jp; Nakamura, Masahiro; Ohtake, Mitsuru

2016-08-15

Formation of L1{sub 0}-oredered structure from disordered A1 phase has been investigated for FePt and FePd films on MgO(001) substrates employing a two-step method consisting of low temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. L1{sub 0}-(001) variant crystal with the c-axis perpendicular to the substrate grows preferentially in FePd films whereas L1{sub 0}-(100), (010) variants tend to be mixed with the L1{sub 0}-(001) variant in FePt films. The structure analysis by X-ray diffraction indicates that a difference in A1 lattice strain is the influential factor that determines the resulting L1{sub 0}-variant structure in ordered thinmore » films. Misfit dislocations and anti-phase boundaries are observed in high-resolution transmission electron micrographs of 10 nm-thick Fe(Pt, Pd) film consisting of L1{sub 0}-(001) variants which are formed through atomic diffusion at 600 °C in a laterally strained FePt/PeFd epitaxial thin film. Based on the experimental results, a nucleation and growth model for explaining L1{sub 0}-variant formation is proposed, which suggests a possibility in tailoring the L1{sub 0} variant structure in ordered magnetic thin films by controlling the alloy composition, the layer structure, and the substrate material.« less

Nano-structured variable capacitor based on P(VDF-TrFE) copolymer and carbon nanotubes

NASA Astrophysics Data System (ADS)

Lakbita, I.; El-Hami, K.

2018-02-01

A newly organic capacitor was conceived with a variable capacitance using the inverse piezoelectric effect. The device consists of two parallel plates of carbon nanotubes (CNTs), known for their large surface area, high sensitivity and high electric conductivity, separated by a thin film of a dielectric layer of Polyinylidene fluoride and trifluoroehtylene (P(VDF-TrFE)) promising material for piezoelectric and ferroelectric properties. The obtained architecture is the CNT/PVDF-TrFE/CNT capacitor device. In this study, an ultra-thin film of P(VDF-TrFE) (54/46) with thickness of 20 nm was elaborated on highly oriented pyrolytic graphite (HOPG) by spin-coating. The morphology of the ultra-thin film and the mechanical behavior of CNT/P(VDF-TrFE)/CNT system were studied using the atomic force microscopy (AFM) combined with a lock-in amplifier in contact mode. All changes in applied voltage induce a change in thin film thickness according to the inverse piezoelectric effect that affect, consequently the capacitance. The results showed that the ratio of capacitance change ΔC to initial capacitance C0 is ΔC/C0=5%. This value is sufficient to use P(VDF-TrFE) as variable organic capacitor.

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

PubMed

Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

2015-08-26

Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure

NASA Astrophysics Data System (ADS)

Ma, Q. L.; Iihama, S.; Kubota, T.; Zhang, X. M.; Mizukami, S.; Ando, Y.; Miyazaki, T.

2012-09-01

The effects of Mg metallic interlayer on the magnetic properties of thin CoFeB films in MgO/Mg (tMg)/CoFeB (1.2 nm)/Ta structures were studied in this letter. Our experimental result shows that the CoFeB film exhibits perpendicular magnetic anisotropy (PMA) when the CoFeB and MgO layers are separated by a metallic Mg layer with a maximum thickness of 0.8 nm. The origin of PMA was discussed by considering the preferential transmission of the Δ1 symmetry preserved by the Mg interlayer in crystallized MgO/Mg/CoFeB/Ta. In addition, the thin Mg interlayer also contributes to enhancing the thermal stability and reducing the effective damping constant and coercivity of the CoFeB film.

Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe 2SiS 4 and Fe 2GeS 4 Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orefuwa, Samuel A.; Lai, Cheng-Yu; Dobson, Kevin D.

2014-05-12

Fe 2SiS 4 and Fe 2GeS 4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe 2SiS 4 or Fe 2GeS 4 have been reported to date. In the presented work, nanoprecursors to Fe 2SiS 4 and Fe 2GeS 4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Femore » 2SiS 4 and Fe 2GeS 4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe 2SiS 4 and Fe 2GeS 4 as solar absorber material is presented.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

DOE PAGES

Enriquez, Erik M.; Chen, Aiping; Harrell, Zachary John; ...

2016-10-03

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effectivemore » in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.« less

Room temperature multiferroic properties of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghavan, C.M.; Kim, H.J.; Kim, J.W.

2013-11-15

Graphical abstract: - Highlights: • Chemical solution deposition of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}–NiFe{sub 2}O{sub 4} double layered thin film. • Studies on structural, electrical and multiferroic properties. • NiFe{sub 2}O{sub 4} acts as both resistive buffer layer and magnetic source. - Abstract: (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film was prepared on a Pt(111)/Ti/SiO{sub 2}/Si(100) substrate by a chemical solution deposition method. X-ray diffraction and Raman scattering spectroscopy studies confirmed the formation of the distorted rhombohedral perovskite and the inverse spinel cubic structures for the (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4}more » double layered thin film. The (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film exhibited well saturated ferromagnetic (2 M{sub r} of 18.1 emu/cm{sup 3} and 2H{sub c} of 0.32 kOe at 20 kOe) and ferroelectric (2P{sub r} of 60 μC/cm{sup 2} and 2E{sub c} of 813 kV/cm at 866 kV/cm) hysteresis loops with low order of leakage current density (4.5 × 10{sup −6} A/cm{sup 2} at an applied electric field of 100 kV/cm), which suggest the ferroelectric and ferromagnetic multi-layers applications in real devices.« less

Nanocrystalline high-entropy alloy (CoCrFeNiAl 0.3 ) thin-film coating by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Weibing; Lan, Si; Gao, Libo

High-entropy CoCrFeNiAl0.3 alloy thin films were prepared by magnetron sputtering technique. The thin film surface was very smooth and homogeneous. The synchrotron X-ray experiment confirmed that (111) type of texture existed in the thin film, and the structure was face-centered cubic nanocrystals with a minor content of ordered NiAl-type body-centered cubic structures. Interestingly, the elastic modulus of the thin film was nearly the same to the bulk single-crystal counterpart, however, the nanohardness is about four times of the bulk single-crystal counterpart. It was found that the high hardness was due to the formation of nanocrystal structure inside the thin filmsmore » and the preferred growth orientation, which could be promising for applications in micro fabrication and advanced coating technologies.« less

Formation of β-FeSi 2 thin films by partially ionized vapor deposition

NASA Astrophysics Data System (ADS)

Harada, Noriyuki; Takai, Hiroshi

2003-05-01

The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of β-FeSi 2 thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of β-FeSi 2 films deposited on Si substrates. It was confirmed that β-FeSi 2 can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of β-FeSi 2 depends strongly on the content and the acceleration energy of ions.

Synthesis of BiFeO3 thin films by chemical solution deposition - Structural and magnetic studies

NASA Astrophysics Data System (ADS)

Angappane, S.; Kambhala, Nagaiah

2012-06-01

BiFeO3 thin films were deposited on Si (100) substrates by chemical solution deposition. A precursor solution of bismuth acetate and iron acetylacetonate dissolved in distilled water and acetic acid was spin coated on to silicon substrates at ambient conditions, followed by drying and annealing at 650 °C. The films were characterized by XRD and FESEM to study structural properties and morphology. The magnetic properties studied by SQUID magnetometer shows the ferromagnetic nature of the chemical solution deposited BiFeO3 films which are crucial for low cost device applications.

Self Exchange Bias and Bi-stable Magneto-Resistance States in Amorphous TbFeCo and TbSmFeCo Thin Films

NASA Astrophysics Data System (ADS)

Ma, Chung; Li, Xiaopu; Lu, Jiwei; Poon, Joseph; Comes, Ryan; Devaraj, Arun; Spurgeon, Steven

Amorphous ferrimagetic TbFeCo and TbSmFeCo thin films are found to exhibit strong perpendicular magnetic anisotropy. Self exchange bias effect and bi-stable magneto-resistance states are observed near compensation temperature by magnetic hysteresis loop, anomalous Hall effect and transverse magneto-resistance measurements. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb concentration distributed within the amorphous films. The observed exchange anisotropy originates from the exchange interaction between the two nanoscale amorphous phases. Exchange bias effect is used for increasing stability in spin valves and magnetic tunneling junctions. This study opens up a new platform for using amorphous ferrimagnetic thin films that require no epitaxial growth in nanodevices.. The work was supported by the Defense Threat Reduction Agency Grant and the U.S. Department of Energy.

Electrochemically controlled drug-mimicking protein release from iron-alginate thin-films associated with an electrode.

PubMed

Jin, Zhiyuan; Güven, Güray; Bocharova, Vera; Halámek, Jan; Tokarev, Ihor; Minko, Sergiy; Melman, Artem; Mandler, Daniel; Katz, Evgeny

2012-01-01

Novel biocompatible hybrid-material composed of iron-ion-cross-linked alginate with embedded protein molecules has been designed for the signal-triggered drug release. Electrochemically controlled oxidation of Fe(2+) ions in the presence of soluble natural alginate polymer and drug-mimicking protein (bovine serum albumin, BSA) results in the formation of an alginate-based thin-film cross-linked by Fe(3+) ions at the electrode interface with the entrapped protein. The electrochemically generated composite thin-film was characterized by electrochemistry and atomic force microscopy (AFM). Preliminary experiments demonstrated that the electrochemically controlled deposition of the protein-containing thin-film can be performed at microscale using scanning electrochemical microscopy (SECM) as the deposition tool producing polymer-patterned spots potentially containing various entrapped drugs. Application of reductive potentials on the modified electrode produced Fe(2+) cations which do not keep complexation with alginate, thus resulting in the electrochemically triggered thin-film dissolution and the protein release. Different experimental parameters, such as the film-deposition time, concentrations of compounds and applied potentials, were varied in order to demonstrate that the electrodepositon and electrodissolution of the alginate composite film can be tuned to the optimum performance. A statistical modeling technique was applied to find optimal conditions for the formation of the composite thin-film for the maximal encapsulation and release of the drug-mimicking protein at the lowest possible potential. © 2011 American Chemical Society

Epitaxial Fe(1-x)Gax/GaAs structures via electrochemistry for spintronics applications

NASA Astrophysics Data System (ADS)

Reddy, K. Sai Madhukar; Maqableh, Mazin M.; Stadler, Bethanie J. H.

2012-04-01

In this study, thin films of Fe83Ga17 (a giant magnetostrictive alloy) were grown on single-crystalline n-GaAs (001) and polycrystalline brass substrates via electrochemical synthesis from ferrous and gallium sulfate electrolytes. Extensive structural characterization using microdiffraction, high-resolution ω - 2θ, and rocking-curve analysis revealed that the films grown on GaAs(001) are highly textured with ⟨001⟩ orientation along the substrate normal, and the texture improved further upon annealing at 300 °C for 2 h in N2 environment. On the contrary, films grown on brass substrates exhibited ⟨011⟩ preferred orientation. Rocking-curve analysis done on Fe83Ga17/GaAs structures further confirmed that the ⟨001⟩ texture in the Fe83Ga17 thin film is a result of epitaxial nucleation and growth. The non-linear current-voltage plot obtained for the Fe-Ga/GaAs Schottky contacts was characteristic of tunneling injection, and showed improved behavior with annealing. Thus, this study demonstrates the feasibility of fabricating spintronic devices that incorporate highly magnetostrictive Fe(1-x)Gax thin films grown epitaxially via electrochemistry.

Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

NASA Astrophysics Data System (ADS)

Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

2018-02-01

In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

Bulk Single Crystal-Like Structural and Magnetic Characteristics of Epitaxial Spinel Ferrite Thin Films with Elimination of Antiphase Boundaries.

PubMed

Singh, Amit V; Khodadadi, Behrouz; Mohammadi, Jamileh Beik; Keshavarz, Sahar; Mewes, Tim; Negi, Devendra Singh; Datta, Ranjan; Galazka, Zbigniew; Uecker, Reinhard; Gupta, Arunava

2017-08-01

Spinel ferrite NiFe 2 O 4 thin films have been grown on three isostructural substrates, MgAl 2 O 4 , MgGa 2 O 4 , and CoGa 2 O 4 using pulsed laser deposition. These substrates have lattice mismatches of 3.1%, 0.8%, and 0.2%, respectively, with NiFe 2 O 4 . As expected, the films grown on MgAl 2 O 4 substrate show the presence of the antiphase boundary defects. However, no antiphase boundaries (APBs) are observed for films grown on near-lattice-matched substrates MgGa 2 O 4 and CoGa 2 O 4 . This demonstrates that by using isostructural and lattice-matched substrates, the formation of APBs can be avoided in NiFe 2 O 4 thin films. Consequently, static and dynamic magnetic properties comparable with the bulk can be realized. Initial results indicate similar improvements in film quality and magnetic properties due to the elimination of APBs in other members of the spinel ferrite family, such as Fe 3 O 4 and CoFe 2 O 4 , which have similar crystallographic structure and lattice constants as NiFe 2 O 4 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Soft X-ray absorption spectroscopy investigations of Bi{sub 6}FeCoTi{sub 3}O{sub 18} and LaBi{sub 5}FeCoTi{sub 3}O{sub 18} epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Zhangzhang; Huang, Haoliang; Fu, Zhengping

High-quality single-crystalline Bi{sub 6}FeCoTi{sub 3}O{sub 18} and LaBi{sub 5}FeCoTi{sub 3}O{sub 18} thin films were prepared by pulsed laser deposition. X-ray diffraction characterizations indicate a more disordered lattice structure of the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film. The magnetic measurement results demonstrated significantly enhanced ferromagnetism in the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film. The modulation of oxidation and hybridization states caused by substituting Bi with La was studied using the soft X-ray absorption spectroscopy. The spectroscopic results revealed the reduced concentration of oxygen vacancies and the more distorted lattice structure in the LaBi{sub 5}FeCoTi{sub 3}O{sub 18} film, which explained the enhanced ferromagnetism.

Thin films as a platform for understanding the conversion mechanism of FeF2 cathodes in lithium-ion microbatteries

NASA Astrophysics Data System (ADS)

Santos-Ortiz, Reinaldo

Conversion material electrodes such as FeF2 possess the potential to deliver transformative improvements in lithium ion battery performance because they permit a reversible change of more than one Li-ion per 3d metal cation. They outperform current state of the art intercalation cathodes such as LiCoO2, which have volumetric and gravimetric energy densities that are intrinsically limited by single electron transfer. Current studies focus on composite electrodes that are formed by mixing with carbon (FeF 2-C), wherein the carbon is expected to act as a binder to support the matrix and facilitate electronic conduction. These binders complicate the understanding of the electrode-electrolyte interface (SEI) passivation layer growth, of Li agglomeration, of ion and electron transport, and of the basic phase transformation processes under electrochemical cycling. This research uses thin-films as a model platform for obtaining basic understanding to the structural and chemical foundations of the phase conversion processes. Thin film cathodes are free of the binders used in nanocomposite structures and may potentially provide direct basic insight to the evolution of the SEI passivation layer, electron and ion transport, and the electrochemical behavior of true complex phases. The present work consisted of three main tasks (1) Development of optimized processes to deposit FeF2 and LiPON thin-films with the required phase purity and microstructure; (2) Understanding their electron and ion transport properties and; (3) Obtaining insight to the correlation between structure and capacity in thin-film microbatteries with FeF2 thin-film cathode and LiPON thin-film solid electrolyte. Optimized pulsed laser deposition (PLD) growth produced polycrystalline FeF2 films with excellent phase purity and P42/mnm crystallographic symmetry. A schematic band diagram was deduced using a combination of UPS, XPS and UV-Vis spectroscopies. Room temperature Hall measurements reveal that as-deposited FeF2 is n-type with an electron mobility of 0.33 cm 2/V.s and a resistivity was 0.255 O.cm. The LiPON films were deposited by reactive sputtering in nitrogen, and the results indicate that the ionic conductivity is dependent on the amount of nitrogen incorporated into the film during processing. The highest ionic conductivity obtained was 1.431.9E-6 Scm-1 and corresponded to a chemical composition of Li1.9PO3.3N.21.

Phase transition studies in bismuth ferrite thin films synthesized via spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Goyal, Ankit; Lakhotia, Harish

2013-06-01

Multiferroic are the materials, which combine two or more "ferroic" properties, ferromagnetism, ferroelectricity or ferroelasticity. BiFeO3 is the only single phase multiferroic material which possesses a high Curie temperature (TC ˜ 1103 K), and a high Neel temperature (TN ˜ 643 K) at room temperature. Normally sophisticated methods are being used to deposit thin films but here we have tried a different method Low cost Spray Pyrolysis Method to deposit BiFeO3 thin film of Glass Substrate with rhombohedral crystal structure and R3c space group. Bismuth Ferrite thin films are synthesized using Bismuth Nitrate and Iron Nitrate as precursor solutions. X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) were used to study structural analysis of prepared thin films. XRD pattern shows phase formation of BiFeO3 and SEM analysis shows formation of nanocrystals of 200 nm. High Temperature Resistivity measurements were done by using Keithley Electrometer (Two Probe system). Abrupt behavior in temperature range (313 K - 400K) has been observed in resistance studies which more likely suggests that in this transition the structure is tetragonal rather than rhombohedral. BiFeO3 is the potential active material in the next generation of ferroelectric memory devices.

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

PubMed Central

Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F.; Ross, Caroline A.

2013-01-01

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4)O3−δ and polycrystalline (CeY2)Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2)Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates. PMID:28788379

Effect of in situ electric-field-assisted growth on antiphase boundaries in epitaxial Fe3O4 thin films on MgO

NASA Astrophysics Data System (ADS)

Kumar, Ankit; Wetterskog, Erik; Lewin, Erik; Tai, Cheuk-Wai; Akansel, Serkan; Husain, Sajid; Edvinsson, Tomas; Brucas, Rimantas; Chaudhary, Sujeet; Svedlindh, Peter

2018-05-01

Antiphase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. These boundaries result from the intrinsic nucleation and growth mechanism, and are observed as regions where the periodicity of the crystalline lattice is disrupted. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. We explore the effect of using in-plane in situ electric-field-assisted growth on the formation of APBs in heteroepitaxial Fe3O4 (100)/MgO(100) thin films. The electric-field-assisted growth is found to reduce the AF interactions across APBs and, as a consequence, APB-free thin-film-like properties are obtained, which have been probed by electronic, magnetic, and structural characterization. The electric field plays a critical role in controlling the density of APBs during the nucleation process by providing an electrostatic force acting on adatoms and therefore changing their kinetics. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs.

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

PubMed Central

Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Kiaee, Zohreh; Joo, Seung Ki

2016-01-01

The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films. PMID:27005886

Topological characters in Fe (Te1 -xSex ) thin films

NASA Astrophysics Data System (ADS)

Wu, Xianxin; Qin, Shengshan; Liang, Yi; Fan, Heng; Hu, Jiangping

2016-03-01

We investigate topological properties in the Fe(Te,Se) thin films. We find that the single layer FeTe1 -xSex has nontrivial Z2 topological invariance which originates from the parity exchange at the Γ point of the Brillouin zone. The nontrivial topology is mainly controlled by the Te(Se) height. Adjusting the anion height, which can be realized as the function of lattice constants and x in FeTe1 -xSex , can drive a topological phase transition. In a bulk material, the two-dimensional Z2 topology invariance is extended to a strong three-dimensional one. In a thin film, we predict that the topological invariance oscillates with the number of layers. The results can also be applied to iron pnictides. Our research establishes FeTe1 -xSex as a unique system to integrate high-Tc superconductivity and topological properties in a single electronic structure.

Growing barium hexaferrite (BaFe{sub 12}O{sub 19}) thin films using chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Budiawanti, Sri, E-mail: awanty77@yahoo.com; Faculty of Teacher Training and Education, Sebelas Maret University; Soegijono, Bambang

Barium hexaferrite (BaFe{sub 12}O{sub 19}, or simply known as BaM) thin films has been recognized as a potential candidate for microwave-based devices, magnetic recording media and data storage. To grow BaM thin films, chemical solution deposition is conducted using the aqueous solution of metal nitrates, which involves spin coatings on Si substrates. Furthermore, Thermal Gravimeter Analysis (TGA), X-Ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) are applied to evaluate the decomposition behavior, structure, morphology, and magnetic properties of BaM thin films. Additionally, the effects of number of layers variation are also investigated. Finally, magnetic properties analysismore » indicates the isotropic nature of the films.« less

Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method

NASA Astrophysics Data System (ADS)

Peng, Lin; Deng, Hongmei; Tian, Jianjun; Ren, Qing; Peng, Cheng; Huang, Zhipeng; Yang, Pingxiong; Chu, Junhao

2013-03-01

Multiferroic BiFe1-xCoxO3 (x = 0, 0.03, 0.05, 0.1) thin films have been prepared on quartz substrates using a sol-gel technique. X-ray diffraction data confirms that Co atoms have been successfully incorporated into the host lattice. The scanning electron microscopy (SEM) exhibits that the surface morphologies of BiFe0.97Co0.03O3 and BiFe0.95Co0.05O3 thin films become more compact and uniform. With increasing Co dopant, the position of A1-1 and E-4 modes shift towards the lower wavenumber indicates that Co doping induces structural distortion of BiFeO3. With increasing Co composition, the fundamental absorption edges of BiFe1-xCoxO3 films show red shift. Furthermore, transmittance spectra demonstrates that the optical band gap of BiFe1-xCoxO3 films decreases from 2.66 eV to 2.53 eV with the increase of Co from x = 0 to 0.1. At the wavelength of 720 nm, the refractive index decreases and the extinction coefficient increases with increasing the amount of Co. Optical properties reveal that Co doping in BiFeO3 provides preliminary research for optoelectronic devices and infrared detectors. Compared with BiFeO3 prepared under similar conditions, the remanent magnetization Mr of BiFe1-xCoxO3 (x = 0.03, 0.05, 0.1) thin films significantly enhanced, which provides potential applications in information storage.

Evolution of magnetic properties in the vicinity of the Verwey transition in Fe3O4 thin films

NASA Astrophysics Data System (ADS)

Liu, X. H.; Liu, W.; Zhang, Z. D.

2017-09-01

We have systematically studied the evolution of magnetic properties, especially the coercivity and the remanence ratio in the vicinity of the Verwey transition temperature (TV), of high-quality epitaxial Fe3O4 thin films grown on MgO (001), MgAl2O4 (MAO) (001), and SrTiO3 (STO) (001) substrates. We observed rapid change of magnetization, coercivity, and remanence ratio at TV, which are consistent with the behaviors of resistivity versus temperature [ρ (T )] curves for the different thin films. In particular, we found quite different magnetic behaviors for the thin films on MgO from those on MAO and STO, in which the domain size and the strain state play very important roles. The coercivity is mainly determined by the domain size but the demagnetization process is mainly dependent on the strain state. Furthermore, we observed a reversal of remanence ratio at TV with thickness for the thin films grown on MgO: from a rapid enhancement for 40-nm- to a sharp drop for 200-nm-thick film, and the critical thickness is about 80 nm. Finally, we found an obvious hysteretic loop of coercivity (or remanence ratio) with temperature around TV, corresponding to the hysteretic loop of the ρ (T ) curve, in Fe3O4 thin film grown on MgO.

An innovative concept of use of redox-active electrolyte in asymmetric capacitor based on MWCNTs/MnO2 and Fe2O3 thin films

PubMed Central

Chodankar, Nilesh R.; Dubal, Deepak P.; Lokhande, Abhishek C.; Patil, Amar M.; Kim, Jin H.; Lokhande, Chandrakant D.

2016-01-01

In present investigation, we have prepared a nanocomposites of highly porous MnO2 spongy balls and multi-walled carbon nanotubes (MWCNTs) in thin film form and tested in novel redox-active electrolyte (K3[Fe(CN)6] doped aqueous Na2SO4) for supercapacitor application. Briefly, MWCNTs were deposited on stainless steel substrate by “dip and dry” method followed by electrodeposition of MnO2 spongy balls. Further, the supercapacitive properties of these hybrid thin films were evaluated in hybrid electrolyte ((K3[Fe(CN)6 doped aqueous Na2SO4). Thus, this is the first proof-of-design where redox-active electrolyte is applied to MWCNTs/MnO2 hybrid thin films. Impressively, the MWCNTs/MnO2 hybrid film showed a significant improvement in electrochemical performance with maximum specific capacitance of 1012 Fg−1 at 2 mA cm−2 current density in redox-active electrolyte, which is 1.5-fold higher than that of conventional electrolyte (Na2SO4). Further, asymmetric capacitor based on MWCNTs/MnO2 hybrid film as positive and Fe2O3 thin film as negative electrode was fabricated and tested in redox-active electrolytes. Strikingly, MWCNTs/MnO2//Fe2O3 asymmetric cell showed an excellent supercapacitive performance with maximum specific capacitance of 226 Fg−1 and specific energy of 54.39 Wh kg−1 at specific power of 667 Wkg−1. Strikingly, actual practical demonstration shows lightning of 567 red LEDs suggesting “ready-to sell” product for industries. PMID:27982087

An innovative concept of use of redox-active electrolyte in asymmetric capacitor based on MWCNTs/MnO2 and Fe2O3 thin films.

PubMed

Chodankar, Nilesh R; Dubal, Deepak P; Lokhande, Abhishek C; Patil, Amar M; Kim, Jin H; Lokhande, Chandrakant D

2016-12-16

In present investigation, we have prepared a nanocomposites of highly porous MnO 2 spongy balls and multi-walled carbon nanotubes (MWCNTs) in thin film form and tested in novel redox-active electrolyte (K 3 [Fe(CN) 6 ] doped aqueous Na 2 SO 4 ) for supercapacitor application. Briefly, MWCNTs were deposited on stainless steel substrate by "dip and dry" method followed by electrodeposition of MnO 2 spongy balls. Further, the supercapacitive properties of these hybrid thin films were evaluated in hybrid electrolyte ((K 3 [Fe(CN) 6 doped aqueous Na 2 SO 4 ). Thus, this is the first proof-of-design where redox-active electrolyte is applied to MWCNTs/MnO 2 hybrid thin films. Impressively, the MWCNTs/MnO 2 hybrid film showed a significant improvement in electrochemical performance with maximum specific capacitance of 1012 Fg -1 at 2 mA cm -2 current density in redox-active electrolyte, which is 1.5-fold higher than that of conventional electrolyte (Na 2 SO 4 ). Further, asymmetric capacitor based on MWCNTs/MnO 2 hybrid film as positive and Fe 2 O 3 thin film as negative electrode was fabricated and tested in redox-active electrolytes. Strikingly, MWCNTs/MnO 2 //Fe 2 O 3 asymmetric cell showed an excellent supercapacitive performance with maximum specific capacitance of 226 Fg -1 and specific energy of 54.39 Wh kg -1 at specific power of 667 Wkg -1 . Strikingly, actual practical demonstration shows lightning of 567 red LEDs suggesting "ready-to sell" product for industries.

Enhanced photoelectrocatalytic performance of α-Fe2O3 thin films by surface plasmon resonance of Au nanoparticles coupled with surface passivation by atom layer deposition of Al2O3.

PubMed

Liu, Yuting; Xu, Zhen; Yin, Min; Fan, Haowen; Cheng, Weijie; Lu, Linfeng; Song, Ye; Ma, Jing; Zhu, Xufei

2015-12-01

The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposition. The Au nanoparticles (NPs) and Al2O3 shell by atom layer deposition were further introduced to modify the photoelectrodes. Different constructions were made with different deposition orders of Au and Al2O3 on Fe2O3 films. The Fe2O3-Au-Al2O3 construction shows the best PEC performance with 1.78 times enhancement by localized surface plasmon resonance (LSPR) of NPs in conjunction with surface passivation of Al2O3 shells. Numerical simulation was carried out to investigate the promotion mechanisms. The high PEC performance for Fe2O3-Au-Al2O3 construction electrode could be attributed to the Al2O3 intensified LSPR, effective surface passivation by Al2O3 coating, and the efficient charge transfer due to the Fe2O3-Au Schottky junctions.

MAPLE fabrication of thin films based on kanamycin functionalized magnetite nanoparticles with anti-pathogenic properties

NASA Astrophysics Data System (ADS)

Grumezescu, Valentina; Andronescu, Ecaterina; Holban, Alina Maria; Mogoantă, Laurenţiu; Mogoşanu, George Dan; Grumezescu, Alexandru Mihai; Stănculescu, Anca; Socol, Gabriel; Iordache, Florin; Maniu, Horia; Chifiriuc, Mariana Carmen

2015-05-01

In this study we aimed to evaluate the biocompatibility and antimicrobial activity of kanamycin functionalized 5 nm-magnetite (Fe3O4@KAN) nanoparticles thin films deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. A laser deposition regime was established in order to stoichiometrically transfer Fe3O4@KAN thin films on silicone and glass substrates. Morphological and physico-chemical properties of powders and coatings were characterized by XRD, TEM, SEM, AFM and IR microscopy (IRM). Our nanostructured thin films have proved efficiency in the prevention of microbial adhesion and mature biofilms development as a result of antibiotic release in its active form. Furthermore, kanamycin functionalized nanostructures exhibit a good biocompatibility, both in vivo and in vitro, demonstrating their potential for implants application. This is the first study reporting the assessment of the in vivo biocompatibility of a magnetite-antimicrobial thin films produced by MAPLE technique.

Magnetocrystalline anisotropy of ɛ-Fe2O3

NASA Astrophysics Data System (ADS)

Ahamed, Imran; Pathak, Rohit; Skomski, Ralph; Kashyap, Arti

2018-05-01

The epsilon Fe2O3 phase of iron oxide has been studied to understand the spin structure and the magnetocrystalline anisotropy in the bulk and in thin films of ɛ-Fe2O3 and Co-doped ɛ-Fe2O3. The preferential magnetization direction in the nanoparticles of ɛ-Fe2O3 is along the a-axis [M. Gich et al., Chem. Mater. 18, 3889 (2006)]. Compared to the bulk band gap of 1.9 eV, the thin-film band gap is reduced to 1.3 eV in the Co-free films and to 0.7 eV in the film with partial Co substitution. The easy magnetization direction of the bulk and Co-free ɛ-Fe2O3 is along the c-axis, but it switches to the a-axis on Co substitution. All three systems exhibit in-plane anisotropies associated with the orthorhombic crystal structure of the oxide.

Hysteresis and change of transition temperature in thin films of Fe([Me{sub 2}Pyrz]{sub 3}BH){sub 2}, a new sublimable spin-crossover molecule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davesne, V.; Gruber, M.; Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131 Karlsruhe

2015-05-21

Thin films of the spin-crossover (SCO) molecule Fe([Me{sub 2}Pyrz]{sub 3}BH){sub 2} (Fe-pyrz) were sublimed on Si/SiO{sub 2} and quartz substrates, and their properties investigated by X-ray absorption and photoemission spectroscopies, optical absorption, atomic force microscopy, and superconducting quantum interference device. Contrary to the previously studied Fe(phen){sub 2}(NCS){sub 2}, the films are not smooth but granular. The thin films qualitatively retain the typical SCO properties of the powder sample (SCO, thermal hysteresis, soft X-ray induced excited spin-state trapping, and light induced excited spin-state trapping) but present intriguing variations even in micrometer-thick films: the transition temperature decreases when the thickness is decreased,more » and the hysteresis is affected. We explain this behavior in the light of recent studies focusing on the role of surface energy in the thermodynamics of the spin transition in nano-structures. In the high-spin state at room temperature, the films have a large optical gap (∼5 eV), decreasing at thickness below 50 nm, possibly due to film morphology.« less

Iron-Terephthalate Coordination Network Thin Films Through In-Situ Atomic/Molecular Layer Deposition.

PubMed

Tanskanen, A; Karppinen, M

2018-06-12

Iron terephthalate coordination network thin films can be fabricated using the state-of-the-art gas-phase atomic/molecular layer deposition (ALD/MLD) technique in a highly controlled manner. Iron is an Earth-abundant and nonhazardous transition metal, and with its rich variety of potential applications an interesting metal constituent for the inorganic-organic coordination network films. Our work underlines the role of the metal precursor used when aiming at in-situ ALD/MLD growth of crystalline inorganic-organic thin films. We obtain crystalline iron terephthalate films when FeCl 3 is employed as the iron source whereas depositions based on the bulkier Fe(acac) 3 precursor yield amorphous films. The chemical composition and structure of the films are investigated with GIXRD, XRR, FTIR and XPS.

Swift heavy ion irradiation studies of GdFeO3 orthoferrite thin films

NASA Astrophysics Data System (ADS)

Kaur, Pawanpreet; Pandit, Rabia; Sharma, K. K.; Kumar, Ravi

2018-04-01

Thin films of GdFeO3, orthoferrite have been grown on MgO (001) substrate by pulsed laser deposition technique (PLD) to investigate the effect of swift heavy ion irradiation on their structural and magnetic properties. Thin films were irradiated with 200 MeV Ag15+ ions with fluence of 1×1011ions/cm2. The results of X-ray diffraction, atomic force microscopy and vibrating sample magnetometer characterization techniques are found to be different for the irradiated film from that of the pristine sample. The modifications in the irradiated samples are explained in terms of the ion-induced disorder.

Nondestructive Memory Elements Based on Polymeric Langmuir-Blodgett Thin Films

NASA Astrophysics Data System (ADS)

Reece, T. J.; Ducharme, S.

2007-03-01

Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of their low power consumption and fast nondestructive readout. Among the ferroelectric thin films used in FET devices; the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C2H2F2), with trifluoroethylene, TrFE (C2HF3), has distinct advantages, including low dielectric constant, low processing temperature, low cost and compatibility with organic semiconductors. By employing the Langmuir-Blodgett technique, we are able to deposit films as thin as 1.8 nm. We discuss the characterization, modeling and fabrication of metal-ferroelectric-insulator-semiconductor (MFIS) structures incorporating these films.

Magnetic glass-film based on single-nanosize 𝜺 -Fe2O3 nanoparticles

NASA Astrophysics Data System (ADS)

Yoshikiyo, Marie; Namai, Asuka; Nakagawa, Kosuke; Ohkoshi, Shin-ichi

2017-05-01

We report a magnetic thin film of single-nanosize ɛ-Fe2O3 in SiO2 matrix. The glass-film was prepared by sintering a silica coated iron oxide hydroxide on a quartz substrate in air. The glass-film consists of ɛ-Fe2O3 of 8.8 nm size, and its thickness was 570 nm (0.57 μm) with a roughness of 10 nm (0.01 μm). UV-vis spectrum showed that the glass-film has small absorbance of 0.043 at 500 nm. The magneto-optical effect was investigated, and Faraday ellipticity showed a magnetic hysteresis loop with a coercive field of 3.0 ± 0.2 kOe. Furthermore, single-nanosize ɛ-Fe2O3 without silica was prepared as a reference sample, and ferroelectricity was observed. Therefore, the present thin glass-film consists of single-nanosize ferroelectric-ferromagnetic nanoparticles.

Magnetic domain observation of FeCo thin films fabricated by alternate monoatomic layer deposition

NASA Astrophysics Data System (ADS)

Ohtsuki, T.; Kojima, T.; Kotsugi, M.; Ohkochi, T.; Mizuguchi, M.; Takanashi, K.

2014-01-01

FeCo thin films are fabricated by alternate monoatomic layer deposition method on a Cu3Au buffer layer, which in-plane lattice constant is very close to the predicted value to obtain a large magnetic anisotropy constant. The variation of the in-plane lattice constant during the deposition process is investigated by reflection high-energy electron diffraction. The magnetic domain images are also observed by a photoelectron emission microscope in order to microscopically understand the magnetic structure. As a result, element-specific magnetic domain images show that Fe and Co magnetic moments align parallel. A series of images obtained with various azimuth reveal that the FeCo thin films show fourfold in-plane magnetic anisotropy along ⟨110⟩ direction, and that the magnetic domain structure is composed only of 90∘ wall.

Surface topography and electrical properties in Sr2FeMoO6 films studied at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Angervo, I.; Saloaro, M.; Mäkelä, J.; Lehtiö, J.-P.; Huhtinen, H.; Paturi, P.

2018-03-01

Pulsed laser deposited Sr2FeMoO6 thin films were investigated for the first time with scanning tunneling microscopy and spectroscopy. The results confirm atomic scale layer growth, with step-terrace structure corresponding to a single lattice cell scale. The spectroscopy research reveals a distribution of local electrical properties linked to structural deformation in the initial thin film layers at the film substrate interface. Significant hole structure giving rise to electrically distinctive regions in thinner film also seems to set a thickness limit for the thinnest films to be used in applications.

Exploring a new phenomenon in the bactericidal response of TiO2 thin films by Fe doping: Exerting the antimicrobial activity even after stoppage of illumination

NASA Astrophysics Data System (ADS)

Naghibi, Sanaz; Vahed, Shohreh; Torabi, Omid; Jamshidi, Amin; Golabgir, Mohammad Hossein

2015-02-01

Antibacterial properties of Fe-doped TiO2 thin films prepared on glass by the sol-gel hot-dipping technique were studied. The films were characterized by X-ray diffraction, field emission scanning electron microscopy, scanning probe microscopy and X-ray photoelectron spectroscopy. The photocatalytic activities were evaluated by measuring the decomposition rate of methylene blue under ultra violet and visible light. The antibacterial properties of the coatings were investigated against Escherichia coli, Staphylococcus aureus, Saccharomyces cerevisia and Aspergillus niger. The principle of incubation methods was also discussed. The results indicated that Fe doping of thin films eventuated in high antibacterial properties under visible light and this performance remained even after stoppage of illumination. This article tries to provide some explanation for this fact.

Influence of Fe doping on the structural, optical and acetone sensing properties of sprayed ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prajapati, C.S.; Kushwaha, Ajay; Sahay, P.P., E-mail: dr_ppsahay@rediffmail.com

2013-07-15

Graphical abstract: All the films are found to be polycrystalline ZnO possessing hexagonal wurtzite structure. The intensities of all the peaks are diminished strongly in the Fe-doped films, indicating their lower crystallinity as compared to the undoped ZnO film. The average crystallite size decreases from 35.21 nm (undoped sample) to 15.43 nm (1 at% Fe-doped sample). - Highlights: • Fe-doped ZnO films show smaller crystallinity with crystallite size: 15–26 nm. • Optical band gap in ZnO films decreases on Fe doping. • Fe-doped films exhibit the normal dispersion for the wavelength range 450–600 nm. • PL spectra of the Fe-dopedmore » films show quenching of the broad green-orange emission. • Acetone response of the Fe-doped films increases considerably at 300 °C. - Abstract: The ZnO thin films (undoped and Fe-doped) deposited by chemical spray pyrolysis technique have been analyzed by X-ray powder diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Results show that all the films possess hexagonal wurtzite structure of zinc oxide having crystallite sizes in the range 15–36 nm. On 1 at% Fe doping, the surface roughness of the film increases which favors the adsorption of atmospheric oxygen on the film surface and thereby increase in the gas response. Optical studies reveal that the band gap decreases due to creation of some defect energy states below the conduction band edge, arising out of the lattice disorder in the doped films. The refractive index of the films decreases on Fe doping and follows the Cauchy relation of normal dispersion. Among all the films examined, the 1 at% Fe-doped film exhibits the maximum response (∼72%) at 300 °C for 100 ppm concentration of acetone in air.« less

Synthesis and electronic properties of Fe 2TiO 5 epitaxial thin films

DOE PAGES

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; ...

2018-05-02

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

NASA Astrophysics Data System (ADS)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Magnetic properties of epitaxial hexagonal HoFeO3 thin films

NASA Astrophysics Data System (ADS)

Wang, Xiao; Xiao, Zhuyun; Xu, Xiaoshan; Wang, Wenbin; Keavney, David; Liu, Yaohua; Cheng, X. M.

2014-03-01

Multiferroic materials exhibit multiple ferroic orders simultaneously and thus have great potential applications in information technology, sensing and actuation. Epitaxial hexagonal HoFeO3 (h-HFO) films are very promising candidates as multiferroic materials with room temperature ferromagnetism, because magnetic Ho3+ ions are expected to have stronger exchange interactions with Fe3+ ions than the well-studied h-LuFeO3 films. We report study of magnetic properties of epitaxial h-HFO thin films deposited using laser molecular beam epitaxy on Yttria-stabilized zirconia (YSZ) substrates. X-ray diffraction measurements confirmed the epitaxial registry and six-fold symmetry of the film. Temperature dependence of magnetization of the film measured by a Quantum Design SQUID magnetometer shows dominating paramagnetic characteristic. Element specific x-ray magnetic circular dichroism measurements performed at beamline 4-ID-C of the Advanced Photon Source show a ferromagnetic ordering of Fe and an exchange coupling between Ho3+ and Fe3+ ions. Work at BMC is supported by NSF Career award (DMR 1053854). Work at ANL is supported by US-DOE, Office of Science, BES (No. DE-AC02-06CH11357).

Ni doping dependent dielectric, leakage, ferroelectric and magnetic properties in Bi7Fe3-xNixTi3O21 thin films

NASA Astrophysics Data System (ADS)

Yang, B. B.; Song, D. P.; Wei, R. H.; Tang, X. W.; Hu, L.; Yang, J.; Song, W. H.; Dai, J. M.; Zhu, X. B.; Sun, Y. P.

2018-05-01

Bi7Fe3-xNixTi3O21 thin films were prepared by chemical solution deposition on Pt/Ti/SiO2/Si substrates. The Ni doping effects on the dielectric, leakage, ferroelectric and magnetic properties were investigated. Coexistence of ferroelectric and ferromagnetic properties at room-temperature was observed in the Bi7Fe2NiTi3O21 thin film with a remnant polarization 2Pr of 36.4 μC/cm2 and a remnant magnetization 2Mr of 3.9 emu/cm3. The dielectric and leakage properties were discussed in detailed. The results will provide important information to explore single-phase multiferroic materials.

Thin film growth of CaFe2As2 by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

2016-01-01

Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

The effects of oxygen pressure on disordering and magneto-transport properties of Ba{sub 2}FeMoO{sub 6} thin films grown via pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kyeong-Won; Mhin, Sungwook; Jones, Jacob L.

2015-07-21

Epitaxial Ba{sub 2}FeMoO{sub 6} thin films were grown via pulsed laser deposition under low oxygen pressure and their structural, chemical, and magnetic properties were examined, focusing on the effects of oxygen pressure. The chemical disorder, off-stoichiometry in B site cations (Fe and Mo) increased with increasing oxygen pressure and thus magnetic properties were degraded. Interestingly, in contrast, negative magneto-resistance, which is the characteristics of this double perovskite material, was enhanced with increasing oxygen pressure. It is believed that phase segregation of highly disordered thin films is responsible for the increased magneto-resistance of thin films grown at high oxygen pressure. Themore » anomalous Hall effect, which behaves hole-like, was also observed due to spin-polarized itinerant electrons under low magnetic field below 1 T and the ordinary electron-like Hall effect was dominant at higher magnetic fields.« less

The influence of Nd dopants on spin and orbital moments in Nd-doped permalloy thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Chen, E-mail: ronanluochen@gmail.com; Zhang, Wen, E-mail: xiaotur@gmail.com, E-mail: yazhai@seu.edu.cn; Zhai, Ya, E-mail: xiaotur@gmail.com, E-mail: yazhai@seu.edu.cn

2014-08-25

Magnetic properties of Nd{sub X}-Ni{sub 80}Fe{sub 20(1−X)} thin films have been investigated using x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) at room temperature. With the Nd concentration increasing, the ratio of orbital-to-spin moment of Ni and Fe increases significantly, indicating that the spin-orbit coupling in permalloy thin films is enhanced due to the Nd impurities. The spin and orbital moments have been obtained by the sum rules analysis, which shows that the Nd impurities lead to a strong dispersion of spin moments of Fe and Ni while have no effect on orbital moments in Nd-doped permalloy thin films.more » Element-specific XMCD hysteresis loops suggest an antiferromagnetic coupling between the magnetic moments of Nd and permalloy at room temperature. The static magnetic properties have been studied by vibrating sample magnetometer for comparison, which shows a nice agreement with the XMCD results.« less

Grain growth mechanism and magnetic properties in L10-FePt thin films

NASA Astrophysics Data System (ADS)

Li, W.; Chen, L.

2017-08-01

This paper focuses on the grain growth mechanisms and magnetic properties of FePt thin films during an annealing process. The grain size and grain orientation distribution have been quantitatively investigated by electron backscatter diffraction (EBSD), and the grain growth kinetics of thin films were described by the phenomenological kinetic grain growth model. The results show that the grain growth exponent and activation energy of the FePt thin films were 4.26 and 136 kJ/mol respectively, indicating that the grain growth mechanism is mainly controlled by the stochastic jumping of atoms crossing the grain boundaries. X-ray diffraction (XRD) results show that disorder-order transformation was concurrent with grain growth during the annealing process, slowing down the velocity of grain growth. The hysteresis loops reveal that the out-of-plane coercivity and squareness is enhanced with increasing annealing temperature and this can be attributed to the improvement of L10-ordered phase volume fraction and texture intensity.

Longitudinal spin Seebeck effect in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} prepared on gadolinium gallium garnet (001) by metal organic decomposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asada, H., E-mail: asada@yamaguchi-u.ac.jp; Kuwahara, A.; Sakata, N.

2015-05-07

Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with the Ga composition x = 0, 0.5, and 1.0 are prepared on (001) oriented gadolinium gallium garnet substrates by a metal organic decomposition method. Only (001) peaks are observed in x-ray diffraction patterns for all the films, suggesting that the highly oriented Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films were formed. Increasing Ga composition, the saturation magnetization decreases, and the perpendicular easy axis is enhanced due to the decrease of the shape anisotropy. Longitudinal spin Seebeck effects (LSSEs) in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with a Pt layer of 10 nm in thicknessmore » were investigated. Magnetic field dependence of the thermoelectric voltage caused by the LSSE in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} films indicates the hysteresis loop with the small coercivity reflecting the magnetization curve. The decrease of LSSE voltage in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} is clearly observed with the decrease of Fe composition.« less

Thin film lubrication of hexadecane confined by iron and iron oxide surfaces: A crucial role of surface structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ta, D. T.; Tieu, A. K.; Zhu, H. T., E-mail: hongtao@uow.edu.au

2015-10-28

A comparative analysis of thin film lubrication of hexadecane between different iron and its oxide surfaces has been carried out using classical molecular dynamic simulation. An ab initio force-field, COMPASS, was applied for n-hexadecane using explicit atom model. An effective potential derived from density functional theory calculation was utilized for the interfacial interaction between hexadecane and the tribo-surfaces. A quantitative surface parameterization was introduced to investigate the influence of surface properties on the structure, rheological properties, and tribological performance of the lubricant. The results show that although the wall-fluid attraction of hexadecane on pure iron surfaces is significantly stronger thanmore » its oxides, there is a considerable reduction of shear stress of confined n-hexadecane film between Fe(100) and Fe(110) surfaces compared with FeO(110), FeO(111), Fe{sub 2}O{sub 3}(001), and Fe{sub 2}O{sub 3}(012). It was found that, in thin film lubrication of hexadecane between smooth iron and iron oxide surfaces, the surface corrugation plays a role more important than the wall-fluid adhesion strength.« less

Growth, Structural, Electronic, and Magnetic Characterization of GaN, CrN, Fe Islands on CrN, and Fe/CrN Bilayer Thin Films

NASA Astrophysics Data System (ADS)

Alam, Khan

As a part of my Ph.D research, initially I was involved in construction and calibration of an ultra-high vacuum thin film facility, and later on I studied structural, electronic, and magnetic properties of GaN, CrN, Fe/CrN bilayers, and Fe islands on CrN thin films. All of these films were grown by molecular beam epitaxy and characterized with a variety of state-of-the-art techniques including variable temperature reflection high energy electron diffraction, low temperature scanning tunneling microscopy and spectroscopy, variable temperature vibrating sample magnetometry, variable temperature neutron diffraction and reflectometry, variable temperature x-ray diffraction, x-ray reflectometry, Rutherford backscattering, Auger electron spectroscopy, and cross-sectional tunneling electron microscopy. The experimental results are furthermore understood by comparing with numerical calculations using generalized gradient approximation, local density approximation with Hubbard correction, Refl1D, and data analysis and visual environment program. In my first research project, I studied Ga gas adatoms on GaN surfaces. We discovered frozen-out gallium gas adatoms on atomically smooth c(6x12) GaN(0001¯) surface using low temperature scanning tunneling microscopy. We identified adsorption sites of the Ga adatoms on c(6x12) reconstructed surface. Their bonding is determined by measuring low unoccupied molecular orbital level. Absorption sites of the Ga gas adatoms on centered 6x12 are identified, and their asymmetric absorption on the chiral domains is investigated. In second project, I investigated magneto-structural phase transition in chromium nitride (CrN) thin films. The CrN thin films are grown by molecular beam epitaxy. Structural and magnetic transition are studied using variable temperature reflection high energy electron diffraction and variable temperature neutron diffraction. We observed a structural phase transition at the surface at 277+/-2 K, and a sharp, first-order magnetic phase transition from paramagnetic (room temperature) to antiferromagnetic (low temperature) at 280+/-3 K. Our experiments suggest that the structural transition in CrN thin films occur in out-of-plane direction, and epitaxial constraints suppress the in-plane transition; therefore, the low temperature crystal structure of CrN is tetragonal. This new model explains our structural and magnetic data at low temperatures, but it is different than the previously published orthorhombic model. In third project, I studied exchange bias and exchange spring effect in MBE grown Fe/CrN bilayer thin films. We grew Fe/CrN bilayer thin films on MgO(001) substrate by molecular beam epitaxy, and studied them using variable temperature vibrating sample magnetometry, polarized neutron reflectometry, x-ray reflectivity, and cross-sectional transmission electron microscopy. We observed exchange bias and exchange spring effect in all bilayer thin films. We studied the relationship of exchange bias, blocking temperature, and coercivity with Fe and CrN layers thicknesses. We used polarized neutron beam reflectometry to see if spins at Fe/CrN interface are pinned. We found a thin ferromagnetically ordered CrN layer at the interface. In my final project, I studied growth of submonolayer Fe islands on CrN thin films. These films are prepared in two stages: first, a CrN layer is grown by MBE and then a submonolayer Fe is deposited at room temperature from a carefully degassed e-beam evaporator. The films are studied at liquid helium temperature using low temperature scanning tunneling microscopy and spectroscopy. Islands are seen in STM images, after the Fe deposition, at the edges as well as at the center of atomically flat CrN terraces. However, numerical calculations performed by our collaborator Ponce-P'erez from Benem'erita Universidad Aut'onoma de Puebla show that the Fe islands are energetically unstable on the surface. The Fe atoms substitute Cr atoms in the surface layer and the Cr atoms comes out and form islands. In order to find out elemental composition of the islands, we attempted to map local density of state by measuring differential conductance spectra as a function of bias voltage using LT-STS. We observed three characteristically different spectra; one in the CrN substrate and two in the islands. The CrN substrate curve has a "U" shape near Fermi level and a peak at ≈ 105 mV. The islands spectra show Kondo-like resonances at Fermi level; some islands produce a peak whereas others produce a dip the dI/dV curves near Fermi level. Further investigations are needed to determine the origin of the peak and dip in the island curves, as well as to find the composition of the islands.

Ultrafast Magnetoelectronic Devices

DTIC Science & Technology

2012-03-22

Ferromagnetic Resonance Study of Polycrystalline FeV Alloy Films: Ferromagnetic resonance was used to study the magnetic properties and magnetization...magnetic materials, such as pure iron (Fe) and permalloy ( NiFe ) thin films. A broadband FMR setup has been used to investigate the origin of the

Fabrication and Structural Characterization of an Ultrathin Film of a Two-Dimensional-Layered Metal-Organic Framework, {Fe(py)2[Ni(CN)4]} (py = pyridine).

PubMed

Sakaida, Shun; Haraguchi, Tomoyuki; Otsubo, Kazuya; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2017-07-17

We report the fabrication and characterization of the first example of a tetracyanonickelate-based two-dimensional-layered metal-organic framework, {Fe(py) 2 Ni(CN) 4 } (py = pyridine), thin film. To fabricate a nanometer-sized thin film, we utilized the layer-by-layer method, whereby a substrate was alternately soaked in solutions of the structural components. Surface X-ray studies revealed that the fabricated film was crystalline with well-controlled growth directions both parallel and perpendicular to the substrate. In addition, lattice parameter analysis indicated that the crystal system is found to be close to higher symmetry by being downsized to a thin film.

Static and dynamic properties of Co2FeAl thin films: Effect of MgO and Ta as capping layers

NASA Astrophysics Data System (ADS)

Husain, Sajid; Barwal, Vineet; Kumar, Ankit; Behera, Nilamani; Akansel, Serkan; Goyat, Ekta; Svedlindh, Peter; Chaudhary, Sujeet

2017-05-01

The influence of MgO and Ta capping layers on the static and dynamic magnetic properties of Co2FeAl (CFA) Heusler alloy thin films has been investigated. It is observed that the CFA film deposited with MgO capping layer is preeminent compared to the uncapped or Ta capped CFA film. In particular, the magnetic inhomogeneity contribution to the ferromagnetic resonance line broadening and damping constant are found to be minimal for the MgO capped CFA thin film i.e., 0.12±0.01 Oe and 0.0074±0.00014, respectively. The saturation magnetization was found to be 960±25emu/cc.

First observation of magnetoelectric effect in M-type hexaferrite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohebbi, Marjan; Ebnabbasi, Khabat; Vittoria, Carmine

2013-05-07

The magnetoelectric (ME) effect in M-type hexaferrite thin films is reported. Prior to this work, the ME effect in hexaferrite materials was observed only in bulk polycrystalline materials. Thin films of SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} were grown on sapphire (0001) using pulsed laser deposition. The thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance. We measured saturation magnetization of 1250 G, g-factor of 2.66, and coercive field of 20 Oe for these magnetoelectric M-type hexaferrite thin films. The magnetoelectric effect was confirmed by monitoring the change rate in remanence magnetizationmore » with the application of DC voltage at room temperature and it gave rise to changes in remanence in the order of 12.8% with the application of only 1 V (DC voltage). We deduced a magnetoelectric coupling, {alpha}, of 6.07 Multiplication-Sign 10{sup -9} s m{sup -1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.« less

Local Structure of the Amorphous Precursor to Ba-Hexaferrite Thin Films: An Anisotropic Octahedral Fe-O Glass Network

NASA Astrophysics Data System (ADS)

Snyder, J. E.; Harris, V. G.; Koon, N. C.; Sui, X.; Kryder, M. H.

1996-10-01

Anisotropic local structure has been observed around both the Fe and Ba ions in the amorphous precursor to Ba-hexaferrite thin films, using polarization-dependent extended x-ray-absorption fine structure. This anisotropic local structure, consisting mainly of a network of Fe-O octahedra, determines the orientation of the fast-growing basal planes during crystallization, and thus the directions of the c axes and the resulting magnetic anisotropy.

Photoconductivity in BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Basu, S. R.; Martin, L. W.; Chu, Y. H.; Gajek, M.; Ramesh, R.; Rai, R. C.; Xu, X.; Musfeldt, J. L.

2008-03-01

The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW /cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

Critical current enhancement driven by suppression of superconducting fluctuation in ion-gated ultrathin FeSe

NASA Astrophysics Data System (ADS)

Harada, T.; Shiogai, J.; Miyakawa, T.; Nojima, T.; Tsukazaki, A.

2018-05-01

The framework of phase transition, such as superconducting transition, occasionally depends on the dimensionality of materials. Superconductivity is often weakened in the experimental conditions of two-dimensional thin films due to the fragile superconducting state against defects and interfacial effects. In contrast to this general trend, superconductivity in the thin limit of FeSe exhibits an opposite trend, such as an increase in critical temperature (T c) and the superconducting gap exceeding the bulk values; however, the dominant mechanism is still under debate. Here, we measured thickness-dependent electrical transport properties of the ion-gated FeSe thin films to evaluate the superconducting critical current (I c) in the ultrathin FeSe. Upon systematically decreasing the FeSe thickness by the electrochemical etching technique in the Hall bar-shaped electric double-layer transistors, we observed a dramatic enhancement of I c reaching about 10 mA and corresponding to about 107 A cm‑2 in the thinnest condition. By analyzing the transition behavior, we clarify that the suppressed superconducting fluctuation is one of the origins of the large I c in the ion-gated ultrathin FeSe films. These results indicate the existence of a robust superconducting state possibly with dense Cooper pairs at the thin limit of FeSe.

Versatile fluoride substrates for Fe-based superconducting thin films

NASA Astrophysics Data System (ADS)

Kurth, F.; Reich, E.; Hänisch, J.; Ichinose, A.; Tsukada, I.; Hühne, R.; Trommler, S.; Engelmann, J.; Schultz, L.; Holzapfel, B.; Iida, K.

2013-04-01

We demonstrate the growth of Co-doped BaFe2As2 (Ba-122) thin films on CaF2 (001), SrF2 (001), and BaF2 (001) single crystal substrates using pulsed laser deposition. All films are grown epitaxially despite of a large misfit of -10.6% for BaF2 substrate. For all films, a reaction layer is formed at the interface confirmed by X-ray diffraction and for the films grown on CaF2 and BaF2 additionally by transmission electron microscopy. The superconducting transition temperature of the film on CaF2 is around 27 K, whereas the corresponding values of the films on SrF2 and BaF2 are around 22 K and 21 K, respectively. The Ba-122 on CaF2 shows almost identical crystalline quality and superconducting properties as films on Fe-buffered MgO.

Resistive switching properties and physical mechanism of cobalt ferrite thin films

NASA Astrophysics Data System (ADS)

Hu, Wei; Zou, Lilan; Chen, Ruqi; Xie, Wei; Chen, Xinman; Qin, Ni; Li, Shuwei; Yang, Guowei; Bao, Dinghua

2014-04-01

We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good endurance, and long retention have been demonstrated in the Pt/CoFe2O4/Pt memory cells. On the basis of the analysis of current-voltage characteristic and its temperature dependence, we suggest that the carriers transport through the conducting filaments in low resistance state with Ohmic conduction behavior, and the Schottky emission and Poole-Frenkel emission dominate the conduction mechanism in high resistance state. From resistance-temperature dependence of resistance states, we believe that the physical origin of the resistive switching refers to the formation and rupture of the oxygen vacancies related filaments. The nanostructured CoFe2O4 thin films can find applications in resistive random access memory.

Properties of Exchange Coupled All-garnet Magneto-Optic Thin Film Multilayer Structures

PubMed Central

Nur-E-Alam, Mohammad; Vasiliev, Mikhail; Kotov, Viacheslav A.; Balabanov, Dmitry; Akimov, Ilya; Alameh, Kamal

2015-01-01

The effects of exchange coupling on magnetic switching properties of all-garnet multilayer thin film structures are investigated. All-garnet structures are fabricated by sandwiching a magneto-soft material of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 or Bi3Fe5O12:Dy2O3 in between two magneto-hard garnet material layers of composition type Bi2Dy1Fe4Ga1O12 or Bi2Dy1Fe4Ga1O12:Bi2O3. The fabricated RF magnetron sputtered exchange-coupled all-garnet multilayers demonstrate a very attractive combination of magnetic properties, and are of interest for emerging applications in optical sensors and isolators, ultrafast nanophotonics and magneto-plasmonics. An unconventional type of magnetic hysteresis behavior not observed previously in magnetic garnet thin films is reported and discussed. PMID:28788043

Magnetic domain observation of FeCo thin films fabricated by alternate monoatomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohtsuki, T., E-mail: ohtsuki@spring8.or.jp; Kotsugi, M.; Ohkochi, T.

2014-01-28

FeCo thin films are fabricated by alternate monoatomic layer deposition method on a Cu{sub 3}Au buffer layer, which in-plane lattice constant is very close to the predicted value to obtain a large magnetic anisotropy constant. The variation of the in-plane lattice constant during the deposition process is investigated by reflection high-energy electron diffraction. The magnetic domain images are also observed by a photoelectron emission microscope in order to microscopically understand the magnetic structure. As a result, element-specific magnetic domain images show that Fe and Co magnetic moments align parallel. A series of images obtained with various azimuth reveal that themore » FeCo thin films show fourfold in-plane magnetic anisotropy along 〈110〉 direction, and that the magnetic domain structure is composed only of 90∘ wall.« less

Hybrid absorbers composed of Fe3O4 thin film and magnetic composite sheet and enhancement of conduction noise absorption on a microstrip line

NASA Astrophysics Data System (ADS)

Kim, Sung-Soo

2015-05-01

In response to develop wide-band noise absorbers with an improved low-frequency performance, this study investigates hybrid absorbers that are composed of conductive Fe3O4 thin film and magnetic composite sheets. The Fe3O4 films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ≃10-4 Ωm. Rubber composites with flaky Fe-Si-Al particles of a high permeability and high permittivity are used as the magnetic sheet functioning as an electromagnetic shield barrier. Microstrip lines with a characteristic impedance of 50 Ω are used to measure the noise absorbing properties. For the Fe3O4 film with a low surface resistance and covered by the magnetic sheet, approximately 80% power absorption can be obtained at 1 GHz, which is significantly higher than that of the original magnetic sheet or Fe3O4 film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the Fe3O4 film through increased electric field strength bounded by the upper magnetic composite sheet. The noise absorption is further enhanced through increasing the electrical conductivity of the film containing more conductive phase (Fe3O4 + Fe), which can be prepared in a reduced oxygen partial pressure during reactive sputtering.

Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

NASA Astrophysics Data System (ADS)

Singh, S. K.; Kim, Y. K.; Funakubo, H.; Ishiwara, H.

2006-04-01

Epitaxial BiFeO3 (BFO) thin films were fabricated on (001)-, (110)-, and (111)-oriented single-crystal SrRuO3(SRO )/SrTiO3(STO) structures by chemical solution deposition. X-ray diffraction indicates the formation of an epitaxial single-phase perovskite structure and pole figure measurement confirms the cube-on-cube epitaxial relationship of BFO ‖SRO‖STO. Chemical-solution-deposited BFO films have a rhombohedral structure with lattice parameter of 0.395nm, which is the same structure as that of a bulk single crystal. The remanent polarization of approximately 50μC/cm2 was observed in BFO (001) thin films at 80K.

Optimization of rotational speed for growing BaFe12O19 thin films using spin coating

NASA Astrophysics Data System (ADS)

Budiawanti, S.; Soegijono, B.; Mudzakir, I.; Suharno, Fadillah, L.

2017-07-01

Barium ferrite (BaFe12O19, BaM) thin films were fabricated by the spin coating of precursors obtained by using a sol-gel method. The effects of the rotational speed on the spin-coating process for growing a BaM thin film were investigated in this study. Coated films were heat-deposited at different rotational speeds ranging from 2000 to 4000 rpm, while the number of layers was set to nine. Further, the effect of the number of layers on the growth of BaM thin films was discussed. For this purpose, we take the layers number 1 to 12 and take the constant rotational speed of 3000 rpm. All the film were characterized using X-Ray diffraction, Scanning Electron microscope, and Energy-dispersive X-Ray spectroscopy and Vibrating Sample Magnetometer. It was found that by increasing the rotational speed the amount of material deposited on the Si substrate decreased. The measured grain size of the BaM thin film was nearly similar for three three different rotational speeds. However, the grain size was found to increase the number of layers.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

PubMed

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Magnetoelastic Properties of Magnetic Thin Films Using the Magnetooptic Kerr Effect

NASA Astrophysics Data System (ADS)

Mayo, Elizabeth; Lederman, David

1998-03-01

The magnetoelastic properties of Co and Fe thin films were measured using the magnetooptic Kerr effect (MOKE). Films were grown via magnetron sputtering on thin mica substrates. Magnetization loops were measured using MOKE with the magnetic field along different in-plane directions. Subsequently, the samples were mounted on a cylindrical sample holder, which imposed a well-defined strain to the film. This caused the magnetization loops to change dramatically due to the magnetoelastic coefficient of the thin film materials. The effects of the surface roughness and film thickness will also be discussed.

Electromagnetic Sensor Arrays for Nondestructive Evaluation and Robot Control.

DTIC Science & Technology

1985-10-31

flux change for its sensitivity. Instead, it measures the magnetic field itself by using the magnetoresistive effect in a thin film of permalloy ( NiFe ...inductive sensor arrays. Besides devices employing high-permeability magnetic films, this survey also included those based on magneto- resistance and the...Survey.......................7 1. Thin-Film Magnetic Head.................7 2. Thin-Film Magnetoresistive Head ............. 10 3. Summary and

Half-metallic magnetism in Ti 3Co 5-xFe xB 2

DOE PAGES

Pathak, Rohit; Ahamed, Imran; Zhang, W. Y.; ...

2017-02-08

Here, bulk alloys and thin films of Fe-substituted Ti 3Co 5B 2 have been investigated by first-principle density-functional calculations. The series, which is of interest in the context of alnico magnetism and spin electronics, has been experimentally realized in nanostructures but not in the bulk. Our bulk calculations predict paramagnetism for Ti 3Co 5B 2, Ti 3Co 4FeB 2 and Ti 3CoFe 4B 2, whereas Ti 3Fe 5B 2 is predicted to be ferromagnetic. The thin films are all ferromagnetic, indicating that moment formation may be facilitated at nanostructural grain boundaries. One member of the thin-film series, namely Ti 3CoFemore » 4B 2, is half-metallic and exhibits perpendicular easy-axis magnetic anisotropy. The half-metallicity reflects the hybridization of the Ti, Fe and Co 3d orbitals, which causes a band gap in minority spin channel, and the limited equilibrium solubility of Fe in bulk Ti 3Co 5B 2 may be linked to the emerging half-metallicity due to Fe substitution.« less

Half-metallic magnetism in Ti 3Co 5-xFe xB 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, Rohit; Ahamed, Imran; Zhang, W. Y.

Here, bulk alloys and thin films of Fe-substituted Ti 3Co 5B 2 have been investigated by first-principle density-functional calculations. The series, which is of interest in the context of alnico magnetism and spin electronics, has been experimentally realized in nanostructures but not in the bulk. Our bulk calculations predict paramagnetism for Ti 3Co 5B 2, Ti 3Co 4FeB 2 and Ti 3CoFe 4B 2, whereas Ti 3Fe 5B 2 is predicted to be ferromagnetic. The thin films are all ferromagnetic, indicating that moment formation may be facilitated at nanostructural grain boundaries. One member of the thin-film series, namely Ti 3CoFemore » 4B 2, is half-metallic and exhibits perpendicular easy-axis magnetic anisotropy. The half-metallicity reflects the hybridization of the Ti, Fe and Co 3d orbitals, which causes a band gap in minority spin channel, and the limited equilibrium solubility of Fe in bulk Ti 3Co 5B 2 may be linked to the emerging half-metallicity due to Fe substitution.« less

Chlorine gas sensing performance of palladium doped nickel ferrite thin films

NASA Astrophysics Data System (ADS)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-05-01

NiFe2O4 and Pd:NiFe2O4 (Pd=1 w/o, 3 w/o and 5 w/o) thin films, p-type semiconducting oxides with an inverse spinel structure have been used as a gas sensor to detect chlorine. These films were prepared by spray pyrolysis technique and XRD was used to confirm the structure. The surface morphology was studied using SEM. Magnetization measurements were carried out at room temperature using SQUID VSM, which shows ferrimagnetic behavior of the samples. The reduction in optimum operating temperature and enhancement in response was observed on Pd-incorporation in nickel ferrite thin films. Faster response and recovery characteristic is observed Pd-incorporated nickel ferrite thin films. The long-term stability is evaluated over a period of six months. This feature may be regarded as a significant facet towards their practical application as gas sensors.

Field dependent magnetic anisotropy of Fe1-xZnx thin films

NASA Astrophysics Data System (ADS)

Resnick, Damon A.; McClure, A.; Kuster, C. M.; Rugheimer, P.; Idzerda, Y. U.

2013-05-01

Using longitudinal magneto-optical Kerr effect in combination with a variable strength rotating magnetic field, called the Rotational Magneto-Optic Kerr Effect (ROTMOKE) method, we show that the magnetic anisotropy for thin Fe82Zn18 single crystal films, grown on MgO(001) substrates, depends linearly on the strength of the applied magnetic field at low fields but is constant (saturates) at fields greater than 350 Oe. The torque moment curves generated using ROTMOKE are well fit with a model that accounts for the uniaxial and cubic anisotropy with the addition of a cubic anisotropy that depends linearly on the applied magnetic field. The field dependent term is evidence of a large effect on the effective magnetic anisotropy in Fe1-xZnx thin films by the magnetostriction.

Pulsed laser deposition of SmFeAsO1-δ on MgO(100) substrates

NASA Astrophysics Data System (ADS)

Haindl, Silvia; Kinjo, Hiroyuki; Hanzawa, Kota; Hiramatsu, Hidenori; Hosono, Hideo

2018-04-01

Layered iron oxyarsenides are novel interesting semimetallic compounds that are itinerant antiferromagnets in their ground state with a transition to high-temperature superconductivity upon charge carrier doping. The rare earth containing mother compounds offer rich physics due to different antiferromagnetic orderings: the alignment of Fe magnetic moments within the FeAs sublattice, which is believed to play a role for the superconducting pairing mechanism, and the ordering of the rare-earth magnetic moments at low temperatures. Here, we present thin film preparation and a film growth study of SmFeAsO on MgO(100) substrates using pulsed laser deposition (PLD). In general, the PLD method is capable to produce iron oxyarsenide thin films, however, competition with impurity phase formation narrows the parameter window. We assume that the film growth in an ultra-high vacuum (UHV) environment results in an oxygen-deficient phase, SmFeAsO1-δ. Despite the large lattice misfit, we find epitaxial oxyarsenide thin film growth on MgO(100) with evolving film thickness. Bragg reflections are absent in very thin films although they locally show indications for pseudomorphic growth of the first unit cells. We propose the possibility for a Stranski-Krastanov growth mode as a result of the large in-plane lattice misfit between the iron oxypnictide and the MgO unit cells. A columnar 3-dimensional film growth mode dominates and the surface roughness is determined by growth mounds, a non-negligible parameter for device fabrication as well as in the application of surface sensitive probes. Furthermore, we found evidence for a stratified growth in steps of half a unit cell, i.e. alternating growth of (FeAs)- and (SmO1-δ)+ layers, the basic structural components of the unit cell. We propose a simple model for the growth kinetics of this compound.

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun

2016-12-01

For epitaxial films, a critical thickness (t c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO 3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO 3/SrRuO 3/SrTiO 3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO 3 film was resolved into a strained layer with an extremely low piezoelectric coefficientmore » of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.« less

The effect of annealing on structural and optical properties of α-Fe2O3/CdS/α-Fe2O3 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Saleem, M.; Durrani, S. M. A.; Saheb, N.; Al-Kuhaili, M. F.; Bakhtiari, I. A.

2014-11-01

Multilayered thin film heterostructures of α-Fe2O3/CdS/α-Fe2O3 were prepared through physical vapor deposition. Each α-Fe2O3 layer was deposited by e-beam evaporation of iron in an oxygen atmosphere. The CdS layer was deposited by thermal evaporation in a vacuum. The effect of post annealing of multilayered thin films in air in the temperature range 250 °C to 450 °C was investigated. Structural characterization indicated the growth of the α-Fe2O3 phase with a polycrystalline structure without any CdS crystalline phase. As-deposited multilayer heterostructures were amorphous and transformed into polycrystalline upon annealing. The surface modification of the films during annealing was revealed by scanning electron microscopy. Spectrophotometric measurements were used to determine the optical properties, including the transmittance, absorbance, and band gap. All the films had both direct as well as indirect band gaps.

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

PubMed Central

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

2016-01-01

For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling. PMID:27929103

Effect of assistant rf field on phase composition of iron nitride film prepared by magnetron sputtering process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, W.L.; Zheng, F.; Fei, W.D.

2006-01-15

Fe-N thin films were fabricated using a direct current magnetron sputtering process assisted by a radio-frequency (rf) field. The effect of the rf field on the phase composition of the films was investigated. The results indicate that with the assistance of the rf field, various kinds of iron nitrides can be obtained in the films, including {alpha}{sup '}-Fe-N, {alpha}{sup ''}-Fe{sub 16}N{sub 2}, {xi}-Fe{sub 2}N, {epsilon}-Fe{sub 3}N, and {gamma}{sup ''}-FeN with ZnS structure. It was found that the rf field greatly benefits the formation of iron nitrides in the Fe-N films.

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE PAGES

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse; ...

2017-01-06

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Weak magnetism of Aurivillius-type multiferroic thin films probed by polarized neutron reflectivity

NASA Astrophysics Data System (ADS)

Zhai, Xiaofang; Grutter, Alexander J.; Yun, Yu; Cui, Zhangzhang; Lu, Yalin

2018-04-01

Unambiguous magnetic characterization of room-temperature multiferroic materials remains challenging due in part to the difficulty of distinguishing their very weak ferromagnetism from magnetic impurity phases and other contaminants. In this study, we used polarized neutron reflectivity to probe the magnetization of B i6FeCoT i3O18 and LaB i5FeCoT i3O18 in their epitaxial thin films while eliminating a variety of impurity contributions. Our results show that LaB i5FeCoT i3O18 exhibits a magnetization of about 0.016 ±0.027 μB/Fe -Co pair at room temperature, while the B i6FeCoT i3O18 thin film only exhibits a weak magnetic moment below room temperature, with a saturation magnetization of 0.049 ±0.015 μB/Fe -Co pair at 50 K. This polarized-neutron-reflectivity study places an upper magnetization limit on the matrix material of the magnetically doped Aurivillius oxides and helps to clarify the true mechanism behind the room-temperature magnetic performance.

Pulsed Laser Deposition Growth of Delafossite (CuFeO2) thin films and multilayers

NASA Astrophysics Data System (ADS)

Joshi, Toyanath; Ferrari, Piero; Borisov, Pavel; Cabrera, Alejandro; Lederman, David

2014-03-01

Owing to its narrow band gap (<2 eV) and p-type conductivity delafossite CuFeO2 is attractive for applications in the field of solar energy conversion. Obtaining pure phase CuFeO2 thin films, however, is relatively difficult. It is necessary to maintain the lowest possible Cu valency (+1) in order to avoid forming the comparably stable spinel compound CuFe2O4. We present a systematic study of the pulsed laser deposition (PLD) growth conditions for epitaxial (00.1) oriented CuFeO2 thin films on Al2O3 (00.1) substrates. The secondary impurity phase, CuFe2O4, was removed completely by optimizing the growth conditions. RHEED, XRD and TEM showed that the pure phase delafossite films are highly epitaxial to the substrate. The chemical purity was verified by Raman and XPS. The indirect bandgap of 1.15 eV was measured using infrared reflectivity, and is in agreement with the CuFeO2 bulk value. Finally, we discuss the growth and structural characterization of delafossite multilayers, CuFeO2/CuGaO2. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the Microelectronics Advanced Research Corporation (Contract # 2013-MA-2382) at WVU.

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films.

PubMed

Guo, Yiping; Guo, Bing; Dong, Wen; Li, Hua; Liu, Hezhou

2013-07-12

The diode and photovoltaic effects of BiFeO3 and Bi0.9Sr0.1FeO(3-δ) polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi0.9Sr0.1FeO(3-δ) thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities.

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

PubMed

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

In situ Electrochemical-AFM Study of LiFePO4 Thin Film in Aqueous Electrolyte.

PubMed

Wu, Jiaxiong; Cai, Wei; Shang, Guangyi

2016-12-01

Lithium-ion (Li-ion) batteries have been widely used in various kinds of electronic devices in our daily life. The use of aqueous electrolyte in Li-ion battery would be an alternative way to develop low cost and environmentally friendly batteries. In this paper, the lithium iron phosphate (LiFePO4) thin film cathode for the aqueous rechargeable Li-ion battery is prepared by radio frequency magnetron sputtering deposition method. The XRD, SEM, and AFM results show that the film is composed of LiFePO4 grains with olivine structure and the average size of 100 nm. Charge-discharge measurements at current density of 10 μAh cm(-2) between 0 and 1 V show that the LiFePO4 thin film electrode is able to deliver an initial discharge capacity of 113 mAh g(-1). Specially, the morphological changes of the LiFePO4 film electrode during charge and discharge processes were investigated in aqueous environment by in situ EC-AFM, which is combined AFM with chronopotentiometry method. The changes in grain area are measured, and the results show that the size of the grains decreases and increases during the charge and discharge, respectively; the relevant mechanism is discussed.

Modulation of ultrafast laser-induced magnetization precession in BiFeO3-coated La0.67Sr0.33MnO3 thin films

NASA Astrophysics Data System (ADS)

Wan, Qian; Jin, KuiJuan; Wang, JieSu; Yao, HongBao; Gu, JunXing; Guo, HaiZhong; Xu, XiuLai; Yang, GuoZhen

2017-04-01

The ultrafast laser-excited magnetization dynamics of ferromagnetic (FM) La0.67Sr0.33MnO3 (LSMO) thin films with BiFeO3 (BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique. Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect. The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films, which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.

Differences observed in the surface morphology and microstructure of Ni-Fe-Cu ternary thin films electrochemically deposited at low and high applied current densities

NASA Astrophysics Data System (ADS)

Sarac, U.; Kaya, M.; Baykul, M. C.

2016-10-01

In this research, nanocrystalline Ni-Fe-Cu ternary thin films using electrochemical deposition technique were produced at low and high applied current densities onto Indium Tin Oxide (ITO) coated conducting glass substrates. Change of surface morphology and microstructural properties of the films were investigated. Energy dispersive X-ray spectroscopy (EDX) measurements showed that the Ni-Fe-Cu ternary thin films exhibit anomalous codeposition behaviour during the electrochemical deposition process. From the X-ray diffraction (XRD) analyses, it was revealed that there are two segregated phases such as Cu- rich and Ni-rich within the films. The crystallographic structure of the films was face-centered cubic (FCC). It was also observed that the film has lower lattice micro-strain and higher texture degree at high applied current density. Scanning electron microscopy (SEM) studies revealed that the films have rounded shape particles on the base part and cauliflower-like structures on the upper part. The film electrodeposited at high current density had considerably smaller rounded shape particles and cauliflower-like structures. From the atomic force microscopy (AFM) analyses, it was shown that the film deposited at high current density has smaller particle size and surface roughness than the film grown at low current density.

Metal Doped Manganese Oxide Thin Films for Supercapacitor Application.

PubMed

Tung, Mai Thanh; Thuy, Hoang Thi Bich; Hang, Le Thi Thu

2015-09-01

Co and Fe doped manganese oxide thin films were prepared by anodic deposition at current density of 50 mA cm(-2) using the electrolyte containing manganese sulfate and either cobalt sulfate or ferrous sulfate. Surface morphology and crystal structure of oxides were studied by scanning electron microscope (SEM) and X-ray diffraction (XRD). Chemical composition of materials was analyzed by X-ray energy dispersive spectroscope (EDS), iodometric titration method and complexometric titration method, respectively. Supercapacitive behavior of Co and Fe doped manganese oxide films were characterized by cyclic voltammetry (CV) and impedance spectroscopy (EIS). The results show that the doped manganese oxides are composed of nano fiber-like structure with radius of 5-20 nm and remain amorphous structure after heat treatment at 100 degrees C for 2 hours. The average valence of manganese increases from +3.808 to +3.867 after doping Co and from +3.808 to +3.846 after doping Fe. The doped manganese oxide film electrodes exhibited preferably ideal pseudo-capacitive behavior. The specific capacitance value of deposited manganese oxide reaches a maximum of 175.3 F/g for doping Co and 244.6 F/g for doping Fe. The thin films retained about 84% of the initial capacity even after 500 cycles of charge-discharge test. Doping Co and Fe decreases diffusion and charge transfer resistance of the films. The electric double layer capacitance and capacitor response frequency are increased after doping.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

DOEpatents

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Li-ion diffusion kinetics in LiCoPO 4 thin films deposited on NASICON-type glass ceramic electrolytes by magnetron sputtering

NASA Astrophysics Data System (ADS)

Xie, J.; Imanishi, N.; Zhang, T.; Hirano, A.; Takeda, Y.; Yamamoto, O.

LiCoPO 4 thin films were deposited on Li 1+ x+ yAl xTi 2- xSi yP 3- yO 12 (LATSP) solid electrolyte by radio frequency magnetron sputtering and were characterized by X-ray diffraction and scanning electron microscope. The films show a (1 1 1) preferred orientation upon annealing and are chemically stable with LATSP up to 600 °C in air. An all-solid-state Li/PEO 18-Li(CF 3SO 2) 2N/LATSP/LiCoPO 4/Au cell was fabricated to investigate the electrochemical performance and Li-ion chemical diffusion coefficients, D˜Li , of the LiCoPO 4 thin films. The potential dependence of D˜Li values of the LiCoPO 4 thin film was investigated by potentiostatic intermittent titration technique and was compared with those of the LiFePO 4 thin film. These results showed that the intercalation mechanism of Li-ion in LiCoPO 4 is different from that in LiFePO 4.

Shape anisotropy and hybridization enhanced magnetization in nanowires of Fe/MgO/Fe encapsulated in carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aryee, Dennis; Seifu, Dereje

Arrays of tunneling magnetoresistance (TMR) nanowires were synthesized for the first time by filling Fe/MgO/Fe inside vertically grown and substrate supported carbon nanotubes. The magnetic properties of nanowires and planar nanoscale thin films of Fe/MgO/Fe showed several similarities, such as two-fold magnetic symmetry and ratio of orbital moment to spin moment. Nanowires of Fe/MgO/Fe showed higher saturation magnetization by a factor of 2.7 compared to planar thin films of Fe/MgO/Fe at 1.5 kOe. The enhanced magnetic properties likely resulted from shape anisotropy of the nanowires and as well as the hybridization that occur between the π- electronic states of carbonmore » and 3d-bands of the Fe-surface.« less

Structure and magnetic properties of spinel-perovskite nanocomposite thin films on SrTiO3 (111) substrates

NASA Astrophysics Data System (ADS)

Kim, Dong Hun; Yang, Junho; Kim, Min Seok; Kim, Tae Cheol

2016-09-01

Epitaxial CoFe2O4-BiFeO3 nanocomposite thin films were synthesized on perovskite structured SrTiO3 (001) and (111) substrates by combinatorial pulsed laser deposition and characterized using scanning electron microscopy, x-ray diffraction, and vibrating sample magnetometer. Triangular BiFeO3 nanopillars were formed in a CoFe2O4 matrix on (111) oriented SrTiO3 substrates, while CoFe2O4 nanopillars with rectangular or square top surfaces grew in a BiFeO3 matrix on (001) substrates. The magnetic hysteresis loops of nanocomposites on (111) oriented SrTiO3 substrates showed isotropic properties due to the strain relaxation while those of films on SrTiO3 (001) substrates exhibited a strong out-of-plane anisotropy originated from shape and strain effects.

Effect of Al on the microstructure, magnetic and millimeter-wave properties of high oriented barium hexaferrite thin films

NASA Astrophysics Data System (ADS)

Chen, Daming; Chen, Zhuo; Wang, Guijuan; Chen, Yong; Li, Yuanxun; Liu, Yingli

2017-12-01

The microstructure, magnetic and millimeter-wave properties of high oriented barium hexaferrite (BaAlxFe12-xO19) thin films with Al doping level x from 0 to 2 are reported. The films were grown on Pt/TiO2/SiO2/Si substrate by Sol-gel method. It is found that with increasing x from 0 to 2 the hexagonal grain disappear, together with Curie temperature dropped from 449 °C to 332 °C and saturated magnetization (4πMs) decreased from 3.8 kG to 1.9 kG, it is attributed to the fact that the Fe ions were substituted by non-magnetic Al ions, leading to the Fe3+-O-Fe3+ super-exchange interaction became weak. The ferromagnetic resonance (FMR) measurement showed that the FMR linewidths is as low as 113 Oe @ 58 GHz, and the FMR frequency shifted to higher frequency range when increasing Al doping level. These result offer the potential application of barium ferrite thin films in tunable millimeter wave devices such as filter, circulator and isolator.

Tuning the Curie temperature of L1{sub 0} ordered FePt thin films through site-specific substitution of Rh

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Dongbin, E-mail: dongbin.xu@seagate.com; Department of Materials Science and Engineering, National University of Singapore, Singapore 117576; Sun, Cheng-Jun, E-mail: cjsun@aps.anl.gov, E-mail: msecgm@nus.edu.sg

2014-10-14

In structurally ordered magnetic thin films, the Curie temperature (T{sub C}) of ferromagnetic films depends on the exchange integral of the short range ordered neighboring atoms. The exchange integral may be adjusted by controlling the elemental substitutional concentration at the lattice site of interest. We show how to control the T{sub C} in high anisotropy L1{sub 0} Fe{sub 50}Pt{sub 50} magnetic thin films by substituting Rh into the Pt site. Rh substitution in L1{sub 0} FePt modified the local atomic environment and the corresponding electronic properties, while retaining the ordered L1{sub 0} phase. The analysis of extended x-ray Absorption Finemore » Structure spectra shows that Rh uniformly substitutes for Pt in L1{sub 0} FePt. A model of antiferromagnetic defects caused by controlled Rh substitution of the Pt site, reducing the T{sub C,} is proposed to interpret this phenomenon and its validity is further examined by ab initio density functional calculations.« less

Composition gradient, structure, stress, roughness and magnetic properties of 5-500 nm thin NiFe films obtained by electrodeposition

NASA Astrophysics Data System (ADS)

Gong, Jie; Riemer, Steve; Kautzky, Michael; Tabakovic, Ibro

2016-01-01

The composition gradients of 5-500 nm thin NiFe films on Cu and NiP substrates obtained by electrodeposition in stirred plating solutions at pH 3.0 on 8 in wafers were studied. It was found that the average elemental composition of the NiFe changes during electrodeposition with steep downturns of Fe-content, from 58 to 50 wt% Fe, in composition gradient zone near the substrate interface in the thickness range 5-250 nm depending on the electrode substrate (Cu and NiP). The increase of Fe-content in the composition gradient zone is accompanied by the increase of coercivity, Hc, magnetic flux saturation, Bs, saturation magnetostriction, λs, increase of dimensionless roughness, ρrms, and change of stress, σ. The coercivity (easy and hard axis) follows the Neel's relation Hc=ct-n (t is thickness and c is a constant). The mechanisms related to the change of coercivity of the NiFe films deposited on different substrates (Cu and NiP) are discussed in terms of material properties of these films.

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

NASA Astrophysics Data System (ADS)

Kim, Jun-Young; Ionescu, Adrian; Mansell, Rhodri; Farrer, Ian; Oehler, Fabrice; Kinane, Christy J.; Cooper, Joshaniel F. K.; Steinke, Nina-Juliane; Langridge, Sean; Stankiewicz, Romuald; Humphreys, Colin J.; Cowburn, Russell P.; Holmes, Stuart N.; Barnes, Crispin H. W.

2017-01-01

Structural and magnetic properties of 1-10 nm thick Fe films deposited on GaN(0001) were investigated. In-situ reflecting high energy electron diffraction images indicated a α-Fe(110)/GaN(0001) growth of the 3D Volmer-Weber type. The α-Fe(110) X-ray diffraction peak showed a 1° full-width at half-maximum, indicating ≈20 nm grain sizes. A significant reduction in Fe atomic moment from its bulk value was observed for films thinner than 4 nm. Both GaN/Fe interface roughness and Fe film coercivity increased with Fe thickness, indicating a possible deterioration of Fe crystalline quality. Magnetic anisotropy was mainly uniaxial for all films while hexagonal anisotropies appeared for thicknesses higher than 3.7 nm.

Compositional dependence of magnetic anisotropy in chemically synthesized Co3- x Fe x O4 (0 ≤ x ≤ 2)

NASA Astrophysics Data System (ADS)

Hayashi, Kensuke; Yamada, Keisuke; Shima, Mutsuhiro

2018-01-01

Magnetic anisotropy of Co3- x Fe x O4 (CFO, 0 ≤ x ≤ 2) thin-film and powder samples prepared by a sol-gel method has been investigated as a function of Fe composition x. Structural analyses by X-ray diffraction show that CFO powder samples exhibit diffraction peaks associated with the spinel structure when x < 2, while CFO thin-film samples with thickness of 130-510 nm yield the peaks when 0 ≤ x ≤ 2. CFO thin-film samples are highly (111)-oriented with the Lotgering factor greater than 0.9 when 0.6 ≤ x ≤ 1.3. The magnetic anisotropy constant K 1 of CFO powder samples estimated from their room-temperature hysteresis loops yields a minimum when x = 0.9. Relatively large in-plane magnetic anisotropy (K eff = 5.7 × 105 erg/cm3) is observed for the CFO thin-film sample when x = 1.3. With increasing x, the magnetic easy axis of the spinel CFO changes from 〈111〉 to 〈100〉 when x = 0.9.

Parasitic phases at the origin of magnetic moment in BiFeO3 thin films grown by low deposition rate RF sputtering

NASA Astrophysics Data System (ADS)

Mori, Thiago J. A.; Mouls, Caroline L.; Morgado, Felipe F.; Schio, Pedro; Cezar, Júlio C.

2017-09-01

A series of epitaxial BiFeO3 thin films has been grown under high partial pressure in a pure O2 atmosphere, which leads to a low deposition rate. The samples grown under these conditions have presented an evolution of the quality of the epitaxy as the deposition temperature increases, however, spurious β- Bi2O3 and supertetragonal BiFeO3 phases are present in the films grown at higher temperatures. The presence of γ- Fe2O3 is reported in one growing condition, and has been attributed to the origin of hysteretic ferromagnetic behavior. A second kind of magnetism, with higher magnetic moment and anhysteretic behaviour, is attributed to the presence of mixed phases of BiFeO3.

Comparison of reproduce signal and noise of conventional and keepered CoCrTa/Cr thin film media

NASA Astrophysics Data System (ADS)

Sin, Kyusik; Ding, Juren; Glijer, Pawel; Sivertsen, John M.; Judy, Jack H.; Zhu, Jian-Gang

1994-05-01

We studied keepered high coercivity CoCrTa/Cr thin film media with a Cr isolation layer between the CoCrTa storage and an overcoating of an isotropic NiFe soft magnetic layer. The influence of the thickness of the NiFe and Cr layers, and the effects of head bias current on the signal output and noise, were studied using a thin film head. The reproduced signal increased by 7.3 dB, but the signal-to-noise ratio decreased by 4 dB at a linear density of 2100 fr/mm (53.3 kfr/in.) with a 1000 Å thick NiFe keeper layer. The medium noise increased with increasing NiFe thickness and the signal output decreased with decreasing Cr thickness. A low output signal obtained with very thin Cr may be due to magnetic interactions between the keeper layer and magnetic media layer. It is observed that signal distortion and timing asymmetry of the output signals depend on the thickness of the keeper layer and the head bias current. The signal distortion increased and the timing asymmetry decreased as the head bias current was increased. These results may be associated with different permeability of the keeper under the poles of the thin film head due to the superposition of head bias and bit fields.

Synthesis and characterization of lithium intercalation electrodes based on iron oxide thin films

NASA Astrophysics Data System (ADS)

Sarradin, J.; Guessous, A.; Ribes, M.

Sputter-deposited iron oxide thin films are investigated as a possible negative electrode for rocking-chair microbatteries. Experimental conditions related to the manufacturing of amorphous thin films suitable to a large number of available intercalation sites are described. Structural and physical properties of the thin layer films are presented. The conductivities of the amorphous thin films were found to be very high compared with those of the respective crystalline forms. Regarding the electrochemical behaviour, Fe 2O 3-based thin films electrodes are able to store and reversibly exchange lithium ions. At a C/2 charge/discharge rate with 100% depth-of-discharge (DOD), the specific capacity of these amorphous thin film electrodes remains almost constant and close to 330 Ah/kg after more than 120 charge/discharge cycles.

Determination of local order in the amorphous precursor to Ba-hexaferrite thin-film recording media

NASA Astrophysics Data System (ADS)

Snyder, J. E.; Harris, V. G.; Das, B. N.; Koon, N. C.; Sui, X.; Kryder, M. H.

1996-04-01

Ba-hexaferrite thin films for recording media applications are often fabricated by a two-step process: sputter deposition of an amorphous precursor, followed by annealing to crystallize the BaFe12O19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional structural characterization techniques have not been able to distinguish between different as-sputtered films. Using polarization-dependent extended x-ray absorption fine structure (PD-EXAFS), we have observed anisotropic local structure around both Ba and Fe atoms in the amorphous precursor films. Comparison of the results suggests that the amorphous films consist of networks of Fe atoms surrounded by their O nearest neighbors, with Ba atoms fitting into in-between spaces as network modifiers (there might also be some minor Fe network modifying contribution). The local structural anisotropy of the amorphous films appears to determine the orientation of the fast-growing basal plane directions during annealing, and thus the directions of the c axes and the magnetic anisotropy.

Effect of substrate temperature on magnetic properties of MnFe2O4 thin films

NASA Astrophysics Data System (ADS)

Rajagiri, Prabhu; Sahu, B. N.; Venkataramani, N.; Prasad, Shiva; Krishnan, R.

2018-05-01

MnFe2O4 thin films were pulsed laser deposited on to quartz substrate from room temperature (RT) to 650 °C in a pure argon environment. Temperature dependence of spontaneous magnetization (4πMS) was measured on these films from 10 K to 350 K using a vibrating sample magnetometer. Ferromagnetic resonance (FMR) study was also carried out at 300 K. The exchange stiffness constant (D) values were obtained by fitting the 4πMS data to the Bloch's equation. The D values of the films thus found decreases while the 4πMS value increases, though non-monotonically, with the increase in TS and tend to reach bulk values at TS = 650 °C. The variation in D and 4πMS values of the films are explained based on the degree of inversion and oxidation state of cations in thin films.

All-optical measurement of interlayer exchange coupling in Fe/Pt/FePt thin films

NASA Astrophysics Data System (ADS)

Berk, C.; Ganss, F.; Jaris, M.; Albrecht, M.; Schmidt, H.

2018-01-01

Time Resolved Magneto Optic Kerr Effect spectroscopy was used to all-optically study the dynamics in exchange coupled Fe(10 nm)/Pt(x = 0-5 nm)/FePt (10 nm) thin films. As the Pt spacer decreases, the effective magnetization of the layers is seen to evolve towards the strong coupling limit where the two films can be described by a single effective magnetization. The coupling begins at x = 1.5 nm and reaches a maximum exchange coupling constant of 2.89 erg/cm2 at x = 0 nm. The films are ferromagnetically coupled at all Pt thicknesses in the exchange coupled regime (x ≤ 1.5 nm). A procedure for extracting the interlayer exchange constant by measuring the magnetic precession frequencies at multiple applied fields and angles is outlined. The dynamics are well reproduced using micromagnetic simulations.

Synthesis, characterization, and pulsed laser ablation of molecular sieves for thin film applications

NASA Astrophysics Data System (ADS)

Munoz, Trinidad, Jr.

1998-12-01

Molecular sieves are one class of crystalline low density metal oxides which are made up of one-, two-, and three dimensional pores and/or cages. We have investigated the synthesis and characterization of metal substituted aluminophosphates and all silica molecular sieves for thin film applications. A new copper substituted aluminophosphate, CuAPO-5 has been synthesized and characterized using x-ray powder diffraction, FT-IR spectroscopy and scanning electron microscopy. Electron spin resonance and electron spin echo modulation provided supporting evidence of framework incorporation of Cu(II) ions. Thus, an exciting addition has been added to the family of metal substituted aluminophosphates where substitution of the metal has been demonstrated as framework species. Also presented here is the synthesis and characterization of an iron substituted aluminophosphate, FeAPO-5, and an all silica zeolite, UTD-1 for thin film applications. Pulsed laser ablation has been employed as the technique to generate thin films. Here an excimer laser (KrFsp*, 248 nm) was used to deposit the molecular sieves on a variety of substrates including polished silicon, titanium nitride, and porous stainless steel disks. The crystallinity of the deposited films was enhanced by a post hydrothermal treatment. A vapor phase treatment of the laser deposited FeAPO-5 films has been shown to increase the crystallinity of the film without increasing film thickness. Thin films of the FeAPO-5 molecular sieves were subsequently used as the dielectric phase in capacitive type chemical sensors. The capacitance change of the FeAPO-5 devices to the relative moisture makes them potential humidity sensors. The all silica zeolite UTD-1 thin films were deposited on polished silicon and porous supports. A brief post hydrothermal treatment of the laser deposited films deposited on polished silicon and porous metal supports resulted in oriented film growth lending these films to applications in gas separations and catalysis. The oriented UTD-1 membrane was evaluated for the separation of n-heptane/toluene mixture. Practicum two. It has been previously observed that residual moisture plays a role in ETV-ICP-MS by altering signal intensity. Here is reported observed signal intensities with ETV-ICP-MS, resulting from the use of hydrogen, nitrogen and ascorbic acid. The use of ascorbic acid yielded enhanced signal intensity, reproducibility and linearity compared to inorganic modifiers'.

Enhancement of magnetostrictive properties of Galfenol thin films

NASA Astrophysics Data System (ADS)

Nivedita, Lalitha Raveendran; Manivel, Palanisamy; Pandian, Ramanathaswamy; Murugesan, S.; Morley, Nicola Ann; Asokan, K.; Rajendra Kumar, Ramasamy Thangavelu

2018-04-01

The present study investigates the role of substrate temperatures on the structural, morphological, magnetic and magnetostrictive properties of DC sputtered FeGa thin films grown on Si substrates. These films were deposited at various substrate temperatures between 50 and 350 °C. The structural characterization of the films revealed columnar growth and the transformation of surface morphology from prismatic to spherical at high substrate temperatures. Both L12 and B2 phases of FeGa existed in the films, with the L12 phase dominating. The in-plane and out-of-plane vibration sample magnetometry measurements showed the evolution of magnetic anisotropy in these films. It was revealed from the magnetostriction measurements that the films deposited at 250 °C exhibited the maximum value of 59 ppm.

Strain effect on magnetic property of antiferromagnetic insulator SmFeO3

NASA Astrophysics Data System (ADS)

Kuroda, M.; Tanahashi, N.; Hajiri, T.; Ueda, K.; Asano, H.

2018-05-01

Thin films and heterostructures of antiferromagnetic insulator SmFeO3 were fabricated on LaAlO3 (001) substrates by magnetron sputtering, and their structural, magnetic properties were investigated. It was found that epitaxially strained thin films showed a pronounced magnetic anisotropy with the enhanced magnetization up to 65 emu/cc, which is approximately ten times larger than the bulk value. The observed enhancement of magnetization was considered to be due to the lattice distortion and the non-collinear antiferromagnetic spin ordering of SmFeO3.

Atomic-scale distortions and temperature-dependent large pseudogap in thin films of the parent iron-chalcogenide superconductor Fe1+y Te

NASA Astrophysics Data System (ADS)

Gerbi, Andrea; Buzio, Renato; Kawale, Shrikant; Bellingeri, Emilio; Martinelli, Alberto; Bernini, Cristina; Tresca, Cesare; Capone, Massimo; Profeta, Gianni; Ferdeghini, Carlo

2017-12-01

We investigate with scanning tunneling microscopy/spectroscopy (STM/STS) and density functional theory (DFT) calculations the surface structures and the electronic properties of Fe1+y Te thin films grown by pulsed laser deposition. Contrary to the regular arrangement of antiferromagnetic nanostripes previously reported on cleaved single-crystal samples, the surface of Fe1+y Te thin films displays a peculiar distribution of spatially inhomogeneous nanostripes. Both STM and DFT calculations show the bias-dependent nature of such features and support the interpretation of spin-polarized tunneling between the FeTe surface and an unintentionally magnetized tip. In addition, the spatial inhomogeneity is interpreted as a purely electronic effect related to changes in hybridization and Fe-Fe bond length driven by local variations in the concentration of excess interstitial Fe cations. Unexpectedly, the surface density of states measured by STS strongly evolves with temperature in close proximity to the antiferromagnetic-paramagnetic first-order transition, and reveals a large pseudogap of 180-250 meV at about 50-65 K. We believe that in this temperature range a phase transition takes place, and the system orders and locks into particular combinations of orbitals and spins because of the interplay between excess interstitial magnetic Fe and strongly correlated d-electrons.

Size effect in the spin glass magnetization of thin AuFe films as studied by polarized neutron reflectometry.

PubMed

Saoudi, M; Fritzsche, H; Nieuwenhuys, G J; Hesselberth, M B S

2008-02-08

We used polarized neutron reflectometry to determine the temperature dependence of the magnetization of thin AuFe films with 3% Fe concentration. We performed the measurements in a large magnetic field of 6 T in a temperature range from 295 to 2 K. For the films in the thickness range from 500 to 20 nm we observed a Brillouin-type behavior from 295 K down to 50 K and a constant magnetization of about 0.9 micro(B) per Fe atom below 30 K. However, for the 10 nm thick film we observed a Brillouin-type behavior down to 20 K and a constant magnetization of about 1.3 micro(B) per Fe atom below 20 K. These experiments are the first to show a finite-size effect in the magnetization of single spin-glass films in large magnetic fields. Furthermore, the ability to measure the deviation from the paramagnetic behavior enables us to prove the existence of the spin-glass state where other methods relying on a cusp-type behavior fail.

Effects of surface topography on magnetization reversal of magnetic thin films.

PubMed

Girgis, E; Pogossian, S P; Benkhedar, M L

2006-04-01

The influence of the created surface roughness on the coercivity of magnetic thin films has been investigated. The magnetic thin films (CoFe and alternatively NiFe) are sputtered on top of smooth substrates that were previously covered with an array of considerably rougher lines with one of these materials Pt, Cu, CoFe, and NiFe. The lines have been patterned using optical lithography into arrays that are deposited with different thicknesses varying between 5 nm-15 nm. The lines have been designed to have a very rough edge and seated in two different angles relative to the wafer edge (zero and 45 degrees). Magneto-optic Kerr effect (MOKE) measurements showed two distinct switching fields in the hysteresis loops that are due to magnetic domain wall trapping created by the surface roughness. The magnetization reversal showed a strong dependence on the height, the orientation angle, and the material's type of the created surface roughness (the lines).

Local Magnetoelectric Effect in La-Doped BiFeO3 Multiferroic Thin Films Revealed by Magnetic-Field-Assisted Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Pan, Dan-Feng; Zhou, Ming-Xiu; Lu, Zeng-Xing; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

2016-06-01

Multiferroic La-doped BiFeO3 thin films have been prepared by a sol-gel plus spin-coating process, and the local magnetoelectric coupling effect has been investigated by the magnetic-field-assisted scanning probe microscopy connected with a ferroelectric analyzer. The local ferroelectric polarization response to external magnetic fields is observed and a so-called optimized magnetic field of ~40 Oe is obtained, at which the ferroelectric polarization reaches the maximum. Moreover, we carry out the magnetic-field-dependent surface conductivity measurements and illustrate the origin of local magnetoresistance in the La-doped BiFeO3 thin films, which is closely related to the local ferroelectric polarization response to external magnetic fields. This work not only provides a useful technique to characterize the local magnetoelectric coupling for a wide range of multiferroic materials but also is significant for deeply understanding the local multiferroic behaviors in the BiFeO3-based systems.

Direct evidence for the spin cycloid in strained nanoscale bismuth ferrite thin films

PubMed Central

Bertinshaw, Joel; Maran, Ronald; Callori, Sara J.; Ramesh, Vidya; Cheung, Jeffery; Danilkin, Sergey A.; Lee, Wai Tung; Hu, Songbai; Seidel, Jan; Valanoor, Nagarajan; Ulrich, Clemens

2016-01-01

Magnonic devices that utilize electric control of spin waves mediated by complex spin textures are an emerging direction in spintronics research. Room-temperature multiferroic materials, such as bismuth ferrite (BiFeO3), would be ideal candidates for this purpose. To realize magnonic devices, a robust long-range spin cycloid with well-known direction is desired, since it is a prerequisite for the magnetoelectric coupling. Despite extensive investigation, the stabilization of a large-scale uniform spin cycloid in nanoscale (100 nm) thin BiFeO3 films has not been accomplished. Here, we demonstrate cycloidal spin order in 100 nm BiFeO3 thin films through the careful choice of crystallographic orientation, and control of the electrostatic and strain boundary conditions. Neutron diffraction, in conjunction with X-ray diffraction, reveals an incommensurate spin cycloid with a unique [11] propagation direction. While this direction is different from bulk BiFeO3, the cycloid length and Néel temperature remain equivalent to bulk at room temperature. PMID:27585637

Enhanced magneto-optical Kerr effect in rare earth substituted nanostructured cobalt ferrite thin film prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Avazpour, L.; Toroghinejad, M. R.; Shokrollahi, H.

2016-11-01

A series of rare-earth (RE)-doped nanocrystalline Cox RE(1-x) Fe2O4 (x = 0, 0.1, 0.2 and RE: Nd, Eu) thin films were prepared on silicon substrates by a sol-gel process, and the influences of different RE3+ ions on the microstructure, magnetism and polar magneto-optical Kerr effect of the deposited films were investigated. Also this research presents the optimization process of cobalt ferrite thin films deposited via spin coating, by studying their structural and morphological properties at different thicknesses (200, 350 nm) and various heat treatment temperatures 300-850 °C. Nanoparticulate polycrystalline thin film were formed with heat treatment above 400 °C but proper magnetic properties due to well crystallization of the film were achieved at about 650 °C. AFM results indicated that the deposited thin films were crack-free exhibiting a dense nanogranular structure. The root-mean square (RMS) roughness of the thin films was in the range of 0.2-3.2 nm. The results revealed that both of the magnetism and magneto optical Kerr (MOKE) spectra of Cox RE(1-x) Fe2O4 films could be mediated by doping with various RE ions. The Curie temperature of substituted samples was lower than pristine cobalt ferrite thin films. In MOKE spectra both dominant peaks were blue shifted with addition of RE ions. For low concentration dopant the inter-valence charge transfer related rotation was enhanced and for higher concentration dopant the crystal field rotation peak was enhanced. The MOKE enhancement for Eu3+ substituted samples was more than Nd3+ doped cobalt ferrite films. The enhanced MOKEs in nanocrystalline thin films might promise their applications for magneto-optical sensors in adopted wavelengths.

Exploring ferroelectric and magnetic properties of Tb-substituted m = 5 layered Aurivillius phase thin films

NASA Astrophysics Data System (ADS)

Faraz, Ahmad; Ricote, Jesus; Jimenez, Ricardo; Maity, Tuhin; Schmidt, Michael; Deepak, Nitin; Roy, Saibal; Pemble, Martyn E.; Keeney, Lynette

2018-03-01

Here, we report the effect of A-site substitution of Tb at the expense of Bi on the ferroelectric and magnetic properties in m = 5 layered 2-D Aurivillius Bi6Ti3Fe2O18 thin films. The nominal stoichiometry of the prepared compound is Tb0.40Bi5.6Fe2Ti3O18, Tb0.90Bi5.1Fe2Ti3O18, and Bi6Ti3Fe2O18. Phase examination reveals that only 0.40 mol. % is successfully substituted forming Tb0.40Bi5.6Fe2Ti3O18 thin films. Lateral and vertical piezoresponse switching loops up to 200 °C reveal responses for Bi6Ti3Fe2O18, Tb substituted Tb0.40Bi5.6Fe2Ti3O18, and Tb0.90Bi5.1Fe2Ti3O18 thin films along the in-plane (±42.31 pm/V, 88 pm/V and ±134 pm/V, respectively) compared with the out-of-plane (±6.15 pm/V, 19.83 pm/V and ±37.52 pm/V, respectively). The macroscopic in-plane polarization loops reveal in-plane saturation (Ps) and remanence polarization (Pr) for Bi6Ti3Fe2O18 of ±26.16 μC/cm2 and ±22 μC/cm2, whereas, ±32.75 μC/cm2 and ±22.11 μC/cm2, ±40.30 μC/cm2 and ±28.5 μC/cm2 for Tb0.40Bi5.6Fe2Ti3O18 and Tb0.90Bi5.1Fe2Ti3O18 thin films, respectively. No ferromagnetic signatures were observed for Bi6Ti3Fe2O18 and Tb0.40Bi5.6Fe2Ti3O18. However, a weak response was observed for the Tb0.90Bi5.1Fe2Ti3O18 at 2 K. Microstructural analysis of Tb0.90Bi5.1Fe2Ti3O18 revealed that it contains 4 vol. % Fe:Tb rich areas forming FexTbyOz, which accounts for the observed magnetic moment. This study demonstrates the importance of thorough microstructural analysis when determining whether magnetic signatures can be reliably assigned to the single-phase system. We conclude that Tb0.40Bi5.6Fe2Ti3O18 and Tb0.90Bi5.1Fe2Ti3O18 samples are not multiferroic but demonstrate the potential for Fe-RAM applications.

Enhanced magnetoelectric response in 2-2 bilayer 0.50Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3/NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Ade, Ramesh; Sambasiva, V.; Kolte, Jayant; Karthik, T.; Kulkarni, Ajit R.; Venkataramani, N.

2018-03-01

In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3 (PNNZT)/NiFe2O4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO2/Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient (α E ) of ~0.70 V cm-1. Oe-1 at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications.

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

NASA Astrophysics Data System (ADS)

Yuan, Feifei; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina; Hühne, Ruben; Schultz, Ludwig; Shi, Zhixiang

2015-06-01

FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc(θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc(θ) peaks for H||c were observed in films on CaF2 and LaAlO3. Jc(θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau approach with appropriate anisotropy ratio γJ. The scaling parameter γJ is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates.

Room-Temperature Multiferroics and Thermal Conductivity of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 Epitaxial Thin Films (x = 0.1 and 0.2).

PubMed

Zhang, Ji; Sun, Wei; Zhao, Jiangtao; Sun, Lei; Li, Lei; Yan, Xue-Jun; Wang, Ke; Gu, Zheng-Bin; Luo, Zhen-Lin; Chen, Yanbin; Yuan, Guo-Liang; Lu, Ming-Hui; Zhang, Shan-Tao

2017-08-02

Thin films of 0.85BiFe 1-2x Ti x Mg x O 3 -0.15CaTiO 3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO 3 substrate with and without a conductive La 0.7 Sr 0.3 MnO 3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the thin films with very high growth quality. Both the C-1 and C-2 thin films show well-shaped magnetization-magnetic field hysteresis at room temperature, with enhanced switchable magnetization values of 145.3 and 42.5 emu/cm 3 , respectively. The polarization-electric loops and piezoresponse force microscopy measurements confirm the room-temperature ferroelectric nature of both films. However, the C-1 films illustrate a relatively weak ferroelectric behavior and the poled states are easy to relax, whereas the C-2 films show a relatively better ferroelectric behavior with stable poled states. More interestingly, the room-temperature thermal conductivity of C-1 and C-2 films are measured to be 1.10 and 0.77 W/(m·K), respectively. These self-consistent multiferroic properties and thermal conductivities are discussed by considering the composition-dependent content and migration of Fe-induced electrons and/or charged point defects. This study not only provides multifunctional materials with excellent room-temperature magnetic, ferroelectric, and thermal conductivity properties but may also stimulate further work to develop BiFeO 3 -based materials with unusual multifunctional properties.

Magnetoelectricity in CoFe2O4 nanocrystal-P(VDF-HFP) thin films

PubMed Central

2013-01-01

Transition metal ferrites such as CoFe2O4, possessing a large magnetostriction coefficient and high Curie temperature (Tc > 600 K), are excellent candidates for creating magnetic order at the nanoscale and provide a pathway to the fabrication of uniform particle-matrix films with optimized potential for magnetoelectric coupling. Here, a series of 0–3 type nanocomposite thin films composed of ferrimagnetic cobalt ferrite nanocrystals (8 to 18 nm) and a ferroelectric/piezoelectric polymer poly(vinylidene fluoride-co-hexafluoropropene), P(VDF-HFP), were prepared by multiple spin coating and cast coating over a thickness range of 200 nm to 1.6 μm. We describe the synthesis and structural characterization of the nanocrystals and composite films by XRD, TEM, HRTEM, STEM, and SEM, as well as dielectric and magnetic properties, in order to identify evidence of cooperative interactions between the two phases. The CoFe2O4 polymer nanocomposite thin films exhibit composition-dependent effective permittivity, loss tangent, and specific saturation magnetization (Ms). An enhancement of the effective permittivity and saturation magnetization of the CoFe2O4-P(VDF-HFP) films was observed and directly compared with CoFe2O4-polyvinylpyrrolidone, a non-ferroelectric polymer-based nanocomposite prepared by the same method. The comparison provided evidence for the observation of a magnetoelectric effect in the case of CoFe2O4-P(VDF-HFP), attributed to a magnetostrictive/piezoelectric interaction. An enhancement of Ms up to +20.7% was observed at room temperature in the case of the 10 wt.% CoFe2O4-P(VDF-HFP) sample. PMID:24004499

P(VDF-TrFE) Polymer-Based Thin Films Deposited on Stainless Steel Substrates Treated Using Water Dissociation for Flexible Tactile Sensor Development

PubMed Central

Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong

2013-01-01

In this work, deionized (DI) water dissociation was used to treat and change the contact angle of the surface of stainless steel substrates followed by the spin coating of P(VDF-TrFE) material for the fabrication of tactile sensors. The contact angle of the stainless steel surface decreased 14° at −30 V treatment; thus, the adhesion strength between the P(VDF-TrFE) thin film and the stainless steel substrate increased by 90%. Although the adhesion strength was increased at negative voltage treatment, it is observed that the crystallinity value of the P(VDF-TrFE) thin film declined to 37% at −60 V. In addition, the remanent polarization value of the P(VDF-TrFE) thin film declined from 5.6 μC/cm2 to 4.61 μC/cm2 for treatment voltages between −5 V and −60 V. A maximum value of approximately 1000 KV/cm of the coercive field value was obtained with the treatment at −15 V. The d33 value was approximately −10.7 pC/N for the substrate treated at 0 V and reached a minimum of −5 pC/N for treatment at −60 V. By using the P(VDF-TrFE) thin-film as the sensing material for tactile sensors, human pulse measurements were obtained from areas including the carotid, brachial, ankle, radial artery, and apical regions. In addition, the tactile sensor is suitable for monitoring the Cun, Guan, and Chi acupoints located at the radial artery region in Traditional Chinese Medicine (TCM). Waveform measurements of the Cun, Guan, and Chi acupoints are crucial because, in TCM, the various waveforms provided information regarding the health conditions of organs. PMID:24177729

Visualization of anomalous Ettingshausen effect in a ferromagnetic film: Direct evidence of different symmetry from spin Peltier effect

NASA Astrophysics Data System (ADS)

Seki, T.; Iguchi, R.; Takanashi, K.; Uchida, K.

2018-04-01

Spatial distribution of temperature modulation due to the anomalous Ettingshausen effect (AEE) is visualized in a ferromagnetic FePt thin film with in-plane and out-of-plane magnetizations using the lock-in thermography technique. Comparing the AEE of FePt with the spin Peltier effect (SPE) of a Pt/yttrium iron garnet junction provides direct evidence of different symmetries of AEE and SPE. Our experiments and numerical calculations reveal that the distribution of heat sources induced by AEE strongly depends on the direction of magnetization, leading to the remarkable different temperature profiles in the FePt thin film between the in-plane and perpendicularly magnetized configurations.

Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition

NASA Astrophysics Data System (ADS)

Enriquez, Erik; Zhang, Yingying; Chen, Aiping; Bi, Zhenxing; Wang, Yongqiang; Fu, Engang; Harrell, Zachary; Lü, Xujie; Dowden, Paul; Wang, Haiyan; Chen, Chonglin; Jia, Quanxi

2016-08-01

Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1-1 mΩ.cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. The growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.

A crystalline germanium flexible thin-film transistor

NASA Astrophysics Data System (ADS)

Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2017-11-01

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

NASA Astrophysics Data System (ADS)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

Aqueous chemical growth of alpha-Fe2O3-alpha-Cr203 nanocompositethin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vayssieres, Lionel; Guo, Jinghua; Nordgren, Joseph

2001-06-30

We are reporting here on the inexpensive fabrication and optical properties of an iron(III) oxide chromium(III) oxide nanocomposite thin film of corundum crystal structure. Its novel and unique-designed architecture consists of uniformed, well-defined and oriented nanorods of Hematite (alpha-Fe2O3) of 50 nm in diameter and 500nm in length and homogeneously distributed nonaggregated monodisperse spherical nanoparticles of Eskolaite (alpha-Cr2O3) of 250 nm in diameter. This alpha-Fe2O3 alpha-Cr2O3 nanocomposite thin film is obtained by growing, directly onto transparent polycrystalline conducting substrate, an oriented layer of hematite nanorods and growing subsequently, the eskolaite layer. The synthesis is carried out by a template-free, low-temperature,more » multilayer thin film coating process using aqueous solution of metal salts as precursors. Almost 100 percent of the light is absorbed by the composite film between 300 and 525 nm and 40 percent at 800 nm which yields great expectations as photoanode materials for photovoltaic cells and photocatalytic devices.« less

Modeling the thickness dependence of the magnetic phase transition temperature in thin FeRh films

NASA Astrophysics Data System (ADS)

Ostler, Thomas Andrew; Barton, Craig; Thomson, Thomas; Hrkac, Gino

2017-02-01

FeRh and its first-order phase transition can open new routes for magnetic hybrid materials and devices under the assumption that it can be exploited in ultra-thin-film structures. Motivated by experimental measurements showing an unexpected increase in the phase transition temperature with decreasing thickness of FeRh on top of MgO, we develop a computational model to investigate strain effects of FeRh in such magnetic structures. Our theoretical results show that the presence of the MgO interface results in a strain that changes the magnetic configuration which drives the anomalous behavior.

The study of structural properties of carbon nanotubes decorated with NiFe₂O₄ nanoparticles and application of nano-composite thin film as H₂S gas sensor.

PubMed

Hajihashemi, R; Rashidi, Ali M; Alaie, M; Mohammadzadeh, R; Izadi, N

2014-11-01

Nano-composite of multiwall carbon nanotube, decorated with NiFe2O4 nanoparticles (NiFe2O4-MWCNT), was synthesized using the sol-gel method. NiFe2O4-MWCNTs were characterized using different methods such as X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and vibrating sample magnetometer (VSM). The average size of the crystallites is 23.93 nm. The values of the saturation magnetization (MS), coercivity (HC) and retentivity (MR) of NiFe2O4-MWCNTs are obtained as 15 emu g(-1), 21Oe and 5 emu g(-1), respectively. In this research, NiFe2O4-MWCNT thin films were prepared with the spin-coating method. These thin films were used as the H2S gas sensor. The results suggest the possibility of the utilization of NiFe2O4-MWCNT nano-composite, as the H2S detector. The sensor shows appropriate response towards 100 ppm of H2S at 300°C. Copyright © 2014 Elsevier B.V. All rights reserved.

Different magnetic origins of (Mn, Fe)-codoped ZnO powders and thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Jiuping; Jiang, Fengxian; Quan, Zhiyong

2012-11-15

Graphical abstract: The effects of the sample forms, fabricated methods, and process conditions on the structural and magnetic properties of (Mn, Fe)-codoped ZnO powders and films were systematically studied. The origins of ferromagnetism in the vacuum-annealed powder and PLD-deposited film are different. The former originates from the impurities of magnetic clusters, whereas the latter comes from the almost homogenous phase. Highlights: ► The magnetic natures of Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powders and thin films come from different origins. ► The ferromagnetism of the powder is mainly from the contribution of magnetic clusters. ► Whereas the ferromagnetic behavior of the filmmore » comes from the almost homogenous phase. -- Abstract: The structural and magnetic properties of (Mn, Fe)-codoped ZnO powders as well as thin films were investigated. The X-ray diffraction and magnetic measurements indicated that the higher sintering temperature facilitates more Mn and Fe incorporation into ZnO. Magnetic measurements indicated that the powder sintered in air at 800 °C showed paramagnetic, but it exhibited obvious room temperature ferromagnetism after vacuum annealing at 600 °C. The results revealed that magnetic clusters were the major contributors to the observed ferromagnetism in vacuum-annealed Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O powder. Interestingly, the room temperature ferromagnetism was also observed in the Zn{sub 0.98}Mn{sub 0.01}Fe{sub 0.01}O film deposited via pulsed laser deposition from the air-sintered paramagnetic target, but the secondary phases in the film were not detected from X-ray diffraction, transmission electron microscopy, and zero-field cooling and field cooling. Apparently, the magnetic natures of powders and films come from different origins.« less

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switchingmore » using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.« less

Temperature controlled evolution of monoclinic to super-tetragonal phase of epitaxial BiFeO3 thin films on La0.67Sr0.33MnO3 buffered SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Singh, Anar; Kaifeng, Dong; Chen, Jing-Sheng

2018-03-01

Epitaxial BiFeO3 thin films of 130nm were deposited by pulsed laser deposition (PLD) technique on La0.67Sr0.33MnO3 buffered SrTiO3 (001) substrate at various temperatures under different ambient oxygen pressures. Reciprocal space mapping reveals that, with decreasing temperature and oxygen pressure, the broadly reported monoclinic phase (MA) of BiFeO3 thin film initially transforms to a tetragonal phase (T1) with c/a =1.05 (1) in a narrow girth of deposition condition and then to a super-tetragonal phase (T2) with giant c/a = 1.24 (1), as confirmed by reciprocal space mapping using high resolution x-ray diffraction. The surface morphology of the films reveals the island growth of the BiFeO3 films deposited at low temperatures. We propose that the transformation from monoclinic to the super-tetragonal phase is essentially due to the manifestation of excess local strain as a result of the island growth. This study offers a recipe to grow the super-tetragonal phase of BiFeO3, with giant c/a =1.24 (1) which exhibits exceptionally large ferroelectric polarization, on ferromagnetic layer La0.67Sr0.33MnO3. This phase of BiFeO3 can be utilized for the ferroelectric control of magnetism at the interface of BiFeO3 and La0.67Sr0.33MnO3.

Oxygen surface exchange kinetics measurement by simultaneous optical transmission relaxation and impedance spectroscopy: Sr(Ti,Fe)O3-x thin film case study.

PubMed

Perry, Nicola H; Kim, Jae Jin; Tuller, Harry L

2018-01-01

We compare approaches to measure oxygen surface exchange kinetics, by simultaneous optical transmission relaxation (OTR) and AC-impedance spectroscopy (AC-IS), on the same mixed conducting SrTi 0.65 Fe 0.35 O 3-x film. Surface exchange coefficients were evaluated as a function of oxygen activity in the film, controlled by gas partial pressure and/or DC bias applied across the ionically conducting yttria-stabilized zirconia substrate. Changes in measured light transmission through the film over time (relaxations) resulted from optical absorption changes in the film corresponding to changes in its oxygen and oxidized Fe (~Fe 4+ ) concentrations; such relaxation profiles were successfully described by the equation for surface exchange-limited kinetics appropriate for the film geometry. The k chem values obtained by OTR were significantly lower than the AC-IS derived k chem values and k q values multiplied by the thermodynamic factor (bulk or thin film), suggesting a possible enhancement in k by the metal current collectors (Pt, Au). Long-term degradation in k chem and k q values obtained by AC-IS was also attributed to deterioration of the porous Pt current collector, while no significant degradation was observed in the optically derived k chem values. The results suggest that, while the current collector might influence measurements by AC-IS, the OTR method offers a continuous, in situ , and contact-free method to measure oxygen exchange kinetics at the native surfaces of thin films.

Oxygen surface exchange kinetics measurement by simultaneous optical transmission relaxation and impedance spectroscopy: Sr(Ti,Fe)O3-x thin film case study

PubMed Central

Perry, Nicola H.; Kim, Jae Jin; Tuller, Harry L.

2018-01-01

Abstract We compare approaches to measure oxygen surface exchange kinetics, by simultaneous optical transmission relaxation (OTR) and AC-impedance spectroscopy (AC-IS), on the same mixed conducting SrTi0.65Fe0.35O3-x film. Surface exchange coefficients were evaluated as a function of oxygen activity in the film, controlled by gas partial pressure and/or DC bias applied across the ionically conducting yttria-stabilized zirconia substrate. Changes in measured light transmission through the film over time (relaxations) resulted from optical absorption changes in the film corresponding to changes in its oxygen and oxidized Fe (~Fe4+) concentrations; such relaxation profiles were successfully described by the equation for surface exchange-limited kinetics appropriate for the film geometry. The kchem values obtained by OTR were significantly lower than the AC-IS derived kchem values and kq values multiplied by the thermodynamic factor (bulk or thin film), suggesting a possible enhancement in k by the metal current collectors (Pt, Au). Long-term degradation in kchem and kq values obtained by AC-IS was also attributed to deterioration of the porous Pt current collector, while no significant degradation was observed in the optically derived kchem values. The results suggest that, while the current collector might influence measurements by AC-IS, the OTR method offers a continuous, in situ, and contact-free method to measure oxygen exchange kinetics at the native surfaces of thin films. PMID:29511391

Mössbauer effect studies of Fe-C combinatorially sputtered thin films

NASA Astrophysics Data System (ADS)

Al-Maghrabi, M. A.; Sanderson, R. J.; Dunlap, R. A.

2013-08-01

Alloys of Fe1- x C x were produced using combinatorial sputtering methods. The composition of the films as a function of position was determined using electron microprobe techniques and the results have shown that a composition range of about 0.35 < x < 0.75 was obtained. X-ray diffraction methods were employed to study the structure of the thin films and showed that all portions of the films were amorphous or nanostructured. Room temperature 57Fe Mössbauer spectroscopy was utilized to study the atomic environment around the Fe atoms. Hyperfine field distributions of ferromagnetic alloys, as extracted from the Mössbauer analysis, suggested the existence of two classes of Fe sites: (1) classes of Fe sites that have primarily Fe neighbours corresponding to a high-field component in the distribution and (2) classes of Fe sites that have a greater number of C neighbours, corresponding to a low-field component. The magnetic splitting decreased as a function of increasing carbon concentration and alloys with x greater than about 0.68 were primarily paramagnetic in nature. These spectra exhibited distributions of quadrupole splitting with mean splitting in excess of 1.0 mm/s. This indicates a higher degree of local asymmetry around the Fe sites than typically seen in other Fe-metalloid systems.

Dipole pinning effect on photovoltaic characteristics of ferroelectric BiFeO3 films

NASA Astrophysics Data System (ADS)

Biswas, P. P.; Thirmal, Ch.; Pal, S.; Murugavel, P.

2018-01-01

Ferroelectric bismuth ferrite is an attractive candidate for switchable devices. The effect of dipole pinning due to the oxygen vacancy layer on the switching behavior of the BiFeO3 thin film fabricated by the chemical solution deposition method was studied after annealing under air, O2, and N2 environment. The air annealed film showed well defined and dense grains leading to a lower leakage current and superior electrical properties compared to the other two films. The photovoltage and transient photocurrent measured under positive and negative poling elucidated the switching nature of the films. Though the air and O2 annealed films showed a switchable photovoltaic response, the response was severely affected by oxygen vacancies in the N2 annealed film. In addition, the open circuit voltage was found to be mostly dependent on the polarization of BiFeO3 rather than the Schottky barriers at the interface. This work provides an important insight into the effect of dipole pinning caused by oxygen vacancies on the switchable photovoltaic effect of BiFeO3 thin films along with the importance of stoichiometric, defect free, and phase pure samples to facilitate meaningful practical applications.

High-resolution x-ray diffraction and transmission electron microscopy of multiferroic BiFeO3 films

NASA Astrophysics Data System (ADS)

Qi, Xiaoding; Wei, Ming; Lin, Yuan; Jia, Quanxi; Zhi, Dan; Dho, Joonghoe; Blamire, Mark G.; MacManus-Driscoll, Judith L.

2005-02-01

High-resolution x-ray diffraction and transmission electron microscopy (TEM) have been used to study BiFeO3 thin films grown on the bare and SrRuO3 buffered (001) SrTiO3 substrates. Reciprocal space mapping (RSM) around (002) and (103) reflections revealed that BFO films with a thickness of about 200 nm were almost fully relaxed and had a rhombohedral structure. Cross-sectional, high-resolution TEM showed that the films started to relax at a very early stage of growth, which was consistent with the RSM results. A thin intermediate layer of about 2 nm was observed at the interface, which had a smaller lattice than the overgrown film. Twist distortions about the c axis to release the shear strain introduced by the growth of rhombic (001) BiFeO3 on cubic (001) SrTiO3 were also observed. The results indicate that a strained, coherent BiFeO3 film on (001) SrTiO3 is very difficult to maintain and (111) STO substrates are preferable.

Molecular beam epitaxy growth of SmFeAs(O,F) films with Tc = 55 K using the new fluorine source FeF3

NASA Astrophysics Data System (ADS)

Sakoda, Masahito; Ishii, Akihiro; Takinaka, Kenji; Naito, Michio

2017-07-01

REFeAs(O,F) (RE: rare-earth element) has the highest-Tc (˜58 K) among the iron-based superconductors, but a thin-film growth of REFeAs(O,F) is difficult. This is because it is not only a complex compound consisting of five elements but also requires doping of highly reactive fluorine to achieve superconductivity. We have reported in our previous article that fluorine can be supplied to a film by subliming solid-state fluorides such as FeF2 or SmF3. In this article, we report on the growth of SmFeAs(O,F) using FeF3 as an alternative fluorine source. FeF3 is solid at ambient temperatures and decomposes at temperatures as low as 100-200 °C, and releases fluorine-containing gas during the thermal decomposition. With this alternative fluorine source, we have grown SmFeAs(O,F) films with Tc as high as 55 K. This achievement demonstrates that FeF3 has potential as a fluorine source that can be employed ubiquitously for a thin-film growth of any fluorine containing compounds. One problem specific to FeF3 is that the compound is highly hydroscopic and contains a substantial amount of water even in its anhydrous form. In this article, we describe how to overcome this specific problem.

Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan

2016-11-10

Growth of unexpected phases from a composite target of BiFeO 3:BiMnO 3 and/or BiFeO 3:BiCrO 3 has been explored using pulsed laser deposition. The Bi 2FeMnO 6 tetragonal phase can be grown directly on SrTiO 3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO 3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO 2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO 3:BiCrO 3 target. Puremore » X2 phase can be obtained on CeO 2-buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO 3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO 2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.« less

Three-Dimensional Nanoporous Fe2O3/Fe3C-Graphene Heterogeneous Thin Films for Lithium-Ion Batteries

PubMed Central

2015-01-01

Three-dimensional self-organized nanoporous thin films integrated into a heterogeneous Fe2O3/Fe3C-graphene structure were fabricated using chemical vapor deposition. Few-layer graphene coated on the nanoporous thin film was used as a conductive passivation layer, and Fe3C was introduced to improve capacity retention and stability of the nanoporous layer. A possible interfacial lithium storage effect was anticipated to provide additional charge storage in the electrode. These nanoporous layers, when used as an anode in lithium-ion batteries, deliver greatly enhanced cyclability and rate capacity compared with pristine Fe2O3: a specific capacity of 356 μAh cm–2 μm–1 (3560 mAh cm–3 or ∼1118 mAh g–1) obtained at a discharge current density of 50 μA cm–2 (∼0.17 C) with 88% retention after 100 cycles and 165 μAh cm–2 μm–1 (1650 mAh cm–3 or ∼518 mAh g–1) obtained at a discharge current density of 1000 μA cm–2 (∼6.6 C) for 1000 cycles were achieved. Meanwhile an energy density of 294 μWh cm–2 μm–1 (2.94 Wh cm–3 or ∼924 Wh kg–1) and power density of 584 μW cm–2 μm–1 (5.84 W cm–3 or ∼1834 W kg–1) were also obtained, which may make these thin film anodes promising as a power supply for micro- or even nanosized portable electronic devices. PMID:24669862

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

NASA Astrophysics Data System (ADS)

Meng, Jianwei; Jiang, Jun; Geng, Wenping; Chen, Zhihui; Zhang, Wei; Jiang, Anquan

2015-02-01

We fabricated (00l) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm2 for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm2 for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up-negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (Pf-Vf) hysteresis loops in both semiconducting thin films. Pf-Vf hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

NASA Astrophysics Data System (ADS)

Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

2016-08-01

In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film

PubMed Central

Shirsath, Sagar E.; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

2016-01-01

Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate. PMID:27435010

Dopant controlled photoinduced hydrophilicity and photocatalytic activity of SnO2 thin films

NASA Astrophysics Data System (ADS)

Talinungsang; Dhar Purkayastha, Debarun; Krishna, M. Ghanashyam

2018-07-01

The influence of Fe and Ni (1 wt.%) doping on the wettability and photocatalytic activity of sol-gel derived SnO2 films is reported. X-ray diffraction studies revealed the presence of tetragonal phase for both pure and doped SnO2 thin films. The crystallite size was of the order of 8 nm indicating the nanocrystalline nature of the films. The pure SnO2 films which were hydrophilic with a contact angle of 11.8° showed increase in contact angle with doping (38.7° for Fe and 48.6° for Ni). This is accompanied by decrease in surface energy and root mean square roughness, with doping of SnO2 film. In order to further increase the water contact angle, the film surfaces were modified using a layer of stearic acid. As a consequence, the water contact angles increased to 108°, 110° and 111° for the pure, Fe and Ni doped SnO2 films respectively, rendering them hydrophobic. Significantly, the unmodified surfaces that did not exhibit any change under UV irradiation showed photoinduced hydrophilicity on modification with stearic acid. There was a red-shift in the optical band gap of SnO2 films from 3.8 to 3.5 eV with doping, indicating the possibility of dopant controlled photocatalytic activity. This was confirmed by observing the photocatalytic degradation of an aqueous solution of methylene blue under UV irradiation. There was, indeed, significant improvement in the photocatalytic efficiency of the metal doped SnO2 thin film in comparison to undoped film. The current work, thus, demonstrates a simple method to chemically engineer the wettability and photocatalytic activity of SnO2 thin film surfaces.

Strain localization in thin films of Bi(Fe,Mn)O 3 due to the formation of stepped Mn 4+-rich antiphase boundaries

DOE PAGES

MacLaren, I.; Sala, B.; Andersson, S. M. L.; ...

2015-10-17

Here, the atomic structure and chemistry of thin films of Bi(Fe,Mn)O 3 (BFMO) films with a target composition of Bi 2FeMnO 6 on SrTiO 3 are studied using scanning transmission electron microscopy imaging and electron energy loss spectroscopy. It is shown that Mn4+-rich antiphase boundaries are locally nucleated right at the film substrate and then form stepped structures that are approximately pyramidal in three dimensions. These have the effect of confining the material below the pyramids in a highly strained state with an out-of-plane lattice parameter close to 4.1 Å. Outside the area enclosed by the antiphase boundaries, the out-of-planemore » lattice parameter is much closer to bulk values for BFMO. This suggests that to improve the crystallographic perfection of the films whilst retaining the strain state through as much of the film as possible, ways need to be found to prevent nucleation of the antiphase boundaries. Since the antiphase boundaries seem to form from the interaction of Mn with the Ti in the substrate, one route to perform this would be to grow a thin buffer layer of pure BiFeO 3 on the SrTiO 3 substrate to minimise any Mn-Ti interactions.« less

Room temperature magnetism and metal to semiconducting transition in dilute Fe doped Sb1-xSex semiconducting alloy thin films

NASA Astrophysics Data System (ADS)

Agrawal, Naveen; Sarkar, Mitesh; Chawda, Mukesh; Ganesan, V.; Bodas, Dhananjay

2015-02-01

The magnetism was observed in very dilute Fe doped alloy thin film Fe0.008Sb1-xSex, for x = 0.01 to 0.10. These thin films were grown on silicon substrate using thermal evaporation technique. Structural, electrical, optical, charge carrier concentration measurement, surface morphology and magnetic properties were observed using glancing incidence x-ray diffraction (GIXRD), four probe resistivity, photoluminescence, Hall measurement, atomic force microscopy (AFM) and magnetic force microscopy (MFM) techniques, respectively. No peaks of iron were seen in GIXRD. The resistivity results show that activation energy increases with increase in selenium (Se) concentration. The Arrhenius plot reveals metallic behavior below room temperature. The low temperature conduction is explained by variable range-hopping mechanism, which fits very well in the temperature range 150-300 K. The decrease in density of states has been observed with increasing selenium concentration (x = 0.01 to 0.10). There is a metal-to-semiconductor phase transition observed above room temperature. This transition temperature is Se concentration dependent. The particle size distribution ˜47-61 nm is evaluated using AFM images. These thin films exhibit ferromagnetic interactions at room temperature.

Exciting transition metal doped dilute magnetic thin films: MgO:Er and ZnO:Er

NASA Astrophysics Data System (ADS)

Ćakıcı, T.; Sarıtaş, S.; Muǧlu, G. Merhan; Yıldırım, M.

2017-02-01

Erbium doped MgO and doped ZnO thin films have reasonably important properties applications in spintronic devices. These films were synthesized on glass substrates by Chemical Spray Pyrolysis (CSP) method. In the literature there has been almost no report on preparation of MgO:Er dilute magnetic thin films by means of CSP. Because doped thin films show different magnetic behaviors, depending upon the type of magnetic material ions, concentration of them, synthesis route and experimental conditions, synthesized MgO:Er and ZnO:Er films were compared to thin film properties. Optical analyses of the synthesized thin films were examined spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Structural analysis of the thin films was examined by using XRD, Raman Analysis, FE-SEM, EDX and AFM techniques. Also, magnetic properties of the MgO:Er and ZnO:Er films were investigated by vibrating sample magnetometer (VSM) which show that diamagnetic behavior of the MgO:Er thin film and ferromagnetic (FM) behavior of the ZnO:Er film were is formed.

Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate.

PubMed

Xu, Ji-Ping; Zhang, Rong-Jun; Chen, Zhi-Hui; Wang, Zi-Yi; Zhang, Fan; Yu, Xiang; Jiang, An-Quan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

2014-01-01

The BiFeO3 (BFO) thin film was deposited by pulsed-laser deposition on SrRuO3 (SRO)-buffered (111) SrTiO3 (STO) substrate. X-ray diffraction pattern reveals a well-grown epitaxial BFO thin film. Atomic force microscopy study indicates that the BFO film is rather dense with a smooth surface. The ellipsometric spectra of the STO substrate, the SRO buffer layer, and the BFO thin film were measured, respectively, in the photon energy range 1.55 to 5.40 eV. Following the dielectric functions of STO and SRO, the ones of BFO described by the Lorentz model are received by fitting the spectra data to a five-medium optical model consisting of a semi-infinite STO substrate/SRO layer/BFO film/surface roughness/air ambient structure. The thickness and the optical constants of the BFO film are obtained. Then a direct bandgap is calculated at 2.68 eV, which is believed to be influenced by near-bandgap transitions. Compared to BFO films on other substrates, the dependence of the bandgap for the BFO thin film on in-plane compressive strain from epitaxial structure is received. Moreover, the bandgap and the transition revealed by the Lorentz model also provide a ground for the assessment of the bandgap for BFO single crystals.

Magnetic hysteresis measurements of thin films under isotropic stress.

NASA Astrophysics Data System (ADS)

Holland, Patrick; Dubey, Archana; Geerts, Wilhelmus

2000-10-01

Nowadays, ferromagnetic thin films are widely applied in devices for information technology (credit cards, video recorder tapes, floppies, hard disks) and sensors (air bags, anti-breaking systems, navigation systems). Thus, with the increase in the use of magnetic media continued investigation of magnetic properties of materials is necessary to help in determining the useful properties of materials for new or improved applications. We are currently interested in studying the effect of applied external stress on Kerr hysteresis curves of thin magnetic films. The Ni and NiFe films were grown using DC magnetron sputtering with Ar as the sputter gas (pAr=4 mTorr; Tsub=55-190 C). Seed and cap layers of Ti were used on all films for adhesion and oxidation protection, respectively. A brass membrane pressure cell was designed to apply in-plane isotropic stress to thin films. In this pressure cell, gas pressure is used to deform a flexible substrate onto which a thin magnetic film has been sputtered. The curvature of the samples could be controlled by changing the gas pressure to the cell. Magneto-Optical in-plane hysteresis curves at different values of strain were measured. The results obtained show that the stress sensitivity is dependent on the film thickness. For the 500nm NiFe films, the coercivity strongly decreased as a function of the applied stress.

Optical properties of quasi-tetragonal BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Chen, P.; Podraza, N. J.; Xu, X. S.; Melville, A.; Vlahos, E.; Gopalan, V.; Ramesh, R.; Schlom, D. G.; Musfeldt, J. L.

2010-03-01

Optical transmission spectroscopy and spectroscopic ellipsometry were used to extract the optical properties of an epitaxially grown quasi-tetragonal BiFeO3 thin film in the near infrared to near ultraviolet range. The absorption spectrum is overall blue shifted compared with that of rhombohedral BiFeO3, with an absorption onset near 2.25 eV, a direct 3.1 eV band gap, and charge transfer excitations that are ˜0.4 eV higher than those of the rhombohedral counterpart. We interpret these results in terms of structural strain and local symmetry breaking.

Patterned FePt nanostructures using ultrathin self-organized templates

NASA Astrophysics Data System (ADS)

Deng, Chen Hua; Zhang, Min; Wang, Fang; Xu, Xiao Hong

2018-02-01

Patterned magnetic thin films are both scientifically interesting and technologically useful. Ultrathin self-organized anodic aluminum oxide (AAO) template can be used to fabricate large area nanodot and antidot arrays. The magnetic properties of these nanostructures may be tuned by the morphology of the AAO template, which in turn can be controlled by synthetic parameters. In this work, ultrathin AAO templates were used as etching masks for the fabrication of both FePt nanodot and antidot arrays with high areal density. The perpendicular magnetic anisotropy of L10 FePt thin films are preserved in the nanostructures.

Elastic properties of fcc Fe-Mn-X (X = Cr, Co, Ni, Cu) alloys studied by the combinatorial thin film approach and ab initio calculations.

PubMed

Reeh, S; Kasprzak, M; Klusmann, C D; Stalf, F; Music, D; Ekholm, M; Abrikosov, I A; Schneider, J M

2013-06-19

The elastic properties of fcc Fe-Mn-X (X = Cr, Co, Ni, Cu) alloys with additions of up to 8 at.% X were studied by combinatorial thin film growth and characterization and by ab initio calculations using the disordered local moments (DLM) approach. The lattice parameter and Young's modulus values change only marginally with X. The calculations and experiments are in good agreement. We demonstrate that the elastic properties of transition metal alloyed Fe-Mn can be predicted by the DLM model.

Magneto-electric Coupling in Domain Engineered Multiferroic Thin Film Heterostructures

DTIC Science & Technology

2014-11-09

J.-G. Yoon, C. B. Eom, J.-S. Chung, T. W. Noh. Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO[sub 3... piezoelectricity of epitaxial BiFeO3 on SrTiO3 , Appl. Phys. Lett., (02 2012): 62906. doi: 15.00 14.00 13.00 12.00 11.00 10.00 25.00 19.00 20.00...M.V. Holt, S.H. Baek, S.K. Streiffer, P. Baldo, C.B. Eom, P.H. Fuoss. X-ray nanodiffraction of tilted domains in a poled epitaxial BiFeO3 thin film

Mossbauer studies of bulk and thin-film FeTe

NASA Technical Reports Server (NTRS)

Aggarwal, K.; Escue, W. T.; Mendiratta, R. G.

1978-01-01

In study, dependence of Mossbauer parameters on film thickness and film substrate was measured and related to iron tellurium structure. Report also describes film deposition technique (flash deposition) and Mossbauer apparatus.

Electron scattering characteristics of polycrystalline metal transition films by in-situ electrical resistance measurements

NASA Astrophysics Data System (ADS)

Trindade, I. G.; Leitão, D.; Fermento, R.; Pogorelev, Y.; Sousa, J. B.

2009-08-01

In-situ electrical resistance measurements were performed to obtain the scattering characteristics of very thin polycrystalline metal transition magnetic alloys grown by ion beam deposition (IBD) on specific underlayers. The experimental curves show size effects at small film thicknesses and important differences between Co 85Fe 15 and Ni 81Fe 19 thin layers grown on identical underlayers of Ta70 Å/Ru13 Å. The largest difference was observed in Ni 81Fe 19 films grown on underlayers of amorphous Ta70 Å. The experimental curves of electrical resistivity/conductivity variation with layer thickness were well fit within the Mayadas and Shatzkes (M-S) model, assuming specific formulations for grain growth with layer thickness.

Synthesis and Characterization of BaFe12O19 Thin Films Using Suspension of Nano Powders

NASA Astrophysics Data System (ADS)

Salemizadeh, Saman; Seyyed Ebrahimi, S. A.

BaM thin films have been synthesized by dispersing the dried gel nano powders prepared by Sol-Gel method. The solution was made by dissolving iron nitrate Fe(NO3).9H2O, barium nitrate Ba(NO3)2 and citric acid in deyonized water and methanol. This sol was slowly evaporated until a dried gel was formed. This dried gel was then added to ethylene glycol. The final solution was vigorously shaken and mixed in ultrasonic cleaner for 30 min to disperse particles sufficiently. Then the prepared solution spin coated on Si(110) substrate. The obtained thin films were dried at 120 °C and then calcined at 900 °C for 1 h. The films were characterized using X-ray diffraction (XRD) and vibrating sample magnetometer (VSM).

Self-assembled thin films of Fe3O4-Ag composite nanoparticles for spintronic applications

NASA Astrophysics Data System (ADS)

Jiang, Chengpeng; Leung, Chi Wah; Pong, Philip W. T.

2017-10-01

Controlled self-assembly of multi-component magnetic nanoparticles could lead to nanomaterial-based magnetic devices with novel structures and intriguing properties. Herein, self-assembled thin films of Fe3O4-Ag composite nanoparticles (CNPs) with hetero-dimeric shapes were fabricated using interfacial assembly method. The CNP-assembled thin films were further transferred to patterned silicon substrates followed by vacuum annealing, producing CNP-based magnetoresistive (MR) devices. Due to the presence of intra-particle interfaces and inter-particle barriers, an enhanced MR ratio and a non-linear current-voltage relation were observed in the device. The results of this work can potentially pave the way to the future exploration and development of spintronic devices built from composite nanomaterials.

Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

NASA Technical Reports Server (NTRS)

Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

2009-01-01

L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

Structural and magnetic properties of non-stoichiometric Fe1-xO thin films

NASA Astrophysics Data System (ADS)

Muhammed Shameem P., V.; Mekala, Laxman; Kumar, M. Senthil

2018-04-01

The Fe1-xO thin films of various iron deficiencies (x) have been grown at ambient temperature by reactive dc magnetron sputtering technique and their structural and magnetic properties are studied. The structural study shows that the films are polycrystalline. As the iron content (1-x) varies from 0.924 to 0.855 a clear consistent change in the preferential orientation of the grains from [111] to the [200] direction is observed. The magnetization measurements show the possible existence of small superparamagnetic defect clusters at 300 K and large spinel-type defect clusters below the Neel temperature.

Spin Seebeck effect in insulating epitaxial γ-Fe2O3 thin films

NASA Astrophysics Data System (ADS)

Jiménez-Cavero, P.; Lucas, I.; Anadón, A.; Ramos, R.; Niizeki, T.; Aguirre, M. H.; Algarabel, P. A.; Uchida, K.; Ibarra, M. R.; Saitoh, E.; Morellón, L.

2017-02-01

We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ-Fe2O3), a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE) measurements in γ-Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1) μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4), establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

Inverse spin Hall and spin rectification effects in NiFe/FeMn exchange-biased thin films

NASA Astrophysics Data System (ADS)

Garcia, W. J. S.; Seeger, R. L.; da Silva, R. B.; Harres, A.

2017-11-01

Materials presenting high spin-orbit coupling are able to convert spin currents in charge currents. The phenomenon, known as inverse spin Hall effect, promises to revolutionize spintronic technology enabling the electrical detection of spin currents. It has been observed in a variety of systems, usually non-magnetic metals. We study the voltage emerging in exchange biased Ta/NiFe/FeMn/Ta thin films near the ferromagnetic resonance. Measured signals are related to both inverse spin Hall and spin rectification effects, and two distinct protocols were employed to separate their contributions.The curve shift due to the exchange bias effect may enable high frequency applications without an external applied magnetic field.

Multifield Control of Domains in a Room-Temperature Multiferroic 0.85BiTi0.1Fe0.8Mg0.1O3-0.15CaTiO3 Thin Film.

PubMed

Jia, Tingting; Fan, Ziran; Yao, Junxiang; Liu, Cong; Li, Yuhao; Yu, Junxi; Fu, Bi; Zhao, Hongyang; Osada, Minoru; Esfahani, Ehsan Nasr; Yang, Yaodong; Wang, Yuanxu; Li, Jiang-Yu; Kimura, Hideo; Cheng, Zhenxiang

2018-06-20

Single-phase materials that combine electric polarization and magnetization are promising for applications in multifunctional sensors, information storage, spintronic devices, etc. Following the idea of a percolating network of magnetic ions (e.g., Fe) with strong superexchange interactions within a structural scaffold with a polar lattice, a solid solution thin film with perovskite structure at a morphotropic phase boundary with a high level of Fe atoms on the B site of perovskite structure is deposited to combine both ferroelectric and ferromagnetic ordering at room temperature with magnetoelectric coupling. In this work, a 0.85BiTi 0.1 Fe 0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film has been deposited by pulsed laser deposition (PLD). Both the ferroelectricity and the magnetism were characterized at room temperature. Large polarization and a large piezoelectric effective coefficient d 33 were obtained. Multifield coupling of the thin film has been characterized by scanning force microscopy. Ferroelectric domains and magnetic domains could be switched by magnetic field ( H), electric field ( E), mechanical force ( F), and, indicating that complex cross-coupling exists among the electric polarization, magnetic ordering and elastic deformation in 0.85BiTi 0.1 F e0.8 Mg 0.1 O 3 -0.15CaTiO 3 thin film at room temperature. This work also shows the possibility of writing information with electric field, magnetic field, and mechanical force and then reading data by magnetic field. We expect that this work will benefit information applications.

Ordered structure of FeGe2 formed during solid-phase epitaxy

NASA Astrophysics Data System (ADS)

Jenichen, B.; Hanke, M.; Gaucher, S.; Trampert, A.; Herfort, J.; Kirmse, H.; Haas, B.; Willinger, E.; Huang, X.; Erwin, S. C.

2018-05-01

Fe3Si /Ge (Fe ,Si ) /Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si ). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P 4 m m . This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si . We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.

Growth and Surface Modification of LaFeO3 Thin Films Induced By Reductive Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flynn, Brendan T.; Zhang, Hongliang; Shutthanandan, V.

2015-03-01

The electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS)more » demonstrated that the film is highly oriented and stoichiometric. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved x-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of perovskite materials for catalysts.« less

Synthesis and magnetic properties of the thin film exchange spring system of MnBi/FeCo

NASA Astrophysics Data System (ADS)

Sabet, S.; Hildebrandt, E.; Alff, L.

2017-10-01

Manganese bismuth thin films with a nominal thickness of ∼40 nm were grown at room temperature onto quartz glass substrate in a DC magnetron sputtering unit. In contrast to the usual multilayer approach, the MnBi films were deposited using a single sputtering target with a stoichiometry of Mn55Bi45 (at. %). A subsequent in-situ annealing step was performed in vacuum in order to form the ferromagnetic LTP of MnBi. X-ray diffraction confirmed the formation of a textured LTP MnBi hard phase after annealing at 330 °C. This film shows a maximum saturation magnetization of 530 emu/cm3, high out-of-plane coercivity of 15 kOe induced by unreacted bismuth. The exchange coupling effect was investigated by deposition of a second layer of FeCo with 1 nm and 2 nm thickness onto the LTP MnBi films. The MnBi/FeCo double layer showed as expected higher saturation magnetization with increasing thickness of the FeCo layer while the coercive field remained constant. The fabrication of the MnBi/FeCo double layer for an exchange spring magnet was facilitated by deposition from a single stoichiometric target.

Nanolaminated FeCoB/FeCo and FeCoB/NiFe soft magnetic thin films with tailored magnetic properties deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Hida, Rachid; Falub, Claudiu V.; Perraudeau, Sandrine; Morin, Christine; Favier, Sylvie; Mazel, Yann; Saghi, Zineb; Michel, Jean-Philippe

2018-05-01

Thin films based on layers of Fe52Co28B20 (at%), Fe65Co35 (at%), and Ni80Fe20 (at%) were deposited by sputtering on 8″ bare Si and Si/200 nm-thermal-SiO2 wafers by simultaneous use of two or more cathodes. Due to the continuous rotation of the substrate cage, such that the substrates faced different targets alternately, the multilayers consisted of stacks of alternating, nanometer-thick regular layers. The composition of the films was determined by Rutherford Backscattering Spectrometry (RBS) and Nuclear Reactive Analysis (NRA), whereas Plasma Profiling Time of Flight Mass Spectrometry (PP-TOFMS) analysis gave depth profile information about the chemical elements. The structural and magnetic properties of the films were investigated by X-ray Diffraction and by TEM analysis, B-H loop tracer and high frequency single coil technique permeametry, respectively. The linear dependence of the coercivity of these thin films versus the grain size can be explained by the random anisotropy model. These novel, composite soft magnetic multilayers, with tunable in-plane anisotropy, allow operation at tunable frequencies, as shown by broadband (between 100 MHz and 10 GHz) RF measurements that exhibit a classical Landau-Lifschitz-Gilbert (LLG) behavior and, combine the magnetic properties of the individual materials in an advantageous way. This article presents a method to produce nanostructured soft magnetic multilayers, the properties of which can easily be tuned by choosing the ratio of the individual nanolayers. In this way it's possible to combine soft magnetic materials with complementary properties, e.g. high saturation magnetization, low coercivity, high specific resistivity and low magnetostriction

Origin of thickness dependence of structural phase transition temperatures in BiFeO 3 thin films

DOE PAGES

Yang, Yongsoo; Beekman, Christianne; Siemons, Wolter; ...

2016-03-28

In this study, two structural phase transitions are investigated in highly strained BiFeO 3 thin films grown on LaAlO 3 substrates, as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA, and MA to tetragonal) decrease as the film becomes thinner. The existence of an interface layer at the film-substrate interface, deduced from half-order peak intensities, contributes to this behavior only for the thinnest samples; at larger thicknesses (above a few nanometers) the temperature dependence can be understood in terms of electrostatic considerations akin to size effects inmore » ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase and related to the rearrangement rather than the formation of domains. For ultra-thin films, the tetragonal structure is stable at all investigated temperatures (down to 30 K).« less

Stabilization of scandium rich spinel ferrite CoFe{sub 2−x}Sc{sub x}O{sub 4} (x≤1) in thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lefevre, Christophe, E-mail: christophe.lefevre@ipcms.unistra.fr; Roulland, François; Thomasson, Alexandre

2015-12-15

Scandium rich cobalt ferrites Co{sub y}Fe{sub 3−x−y}Sc{sub x}O{sub 4} with y~1 never obtained in bulk could be stabilized in pulsed laser deposited thin films. Scandium contents of up to x=1 are reached. The cell parameter increases versus x as awaited when considering the size of scandium. It is equal to 0.8620 nm for x=1, significantly higher than that of CoFe{sub 2}O{sub 4} (0.8396 nm). The lattice mismatch between the MgO (100) substrate and the scandium-containing spinel leads to an increased roughness. Cobalt is displaced from the octahedral site by Sc and mainly occupies the tetrahedral sites for high x values.more » - Graphical abstract: Magnification of the XRD patterns recorded on thin films of CoFe{sub 2-x}Sc{sub x}O{sub 4} for x=0, 0.45, 1 and 1.2, the arrows denote the (004) and (008) diffraction lines of the spinel phase.« less

Spin-glass behaviors in carrier polarity controlled Fe{sub 3−x}Ti{sub x}O{sub 4} semiconductor thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamahara, H., E-mail: yamahara@bioxide.t.u-tokyo.ac.jp; Seki, M.; Adachi, M.

2015-08-14

Carrier-type control of spin-glass (cluster spin-glass) is studied in order to engineer basic magnetic semiconductor elements using the memory functions of spin-glass. A key of carrier-polarity control in magnetite is the valence engineering between Fe(II) and Fe(III) that is achieved by Ti(IV) substitution. Single phases of (001)-oriented Fe{sub 3−x}Ti{sub x}O{sub 4} thin films have been obtained on spinel MgAl{sub 2}O{sub 4} substrates by pulsed laser deposition. Thermoelectric power measurements reveal that Ti-rich films (x = 0.8) show p-type conduction, while Ti-poor films (x = 0.6–0.75) show n-type conduction. The systematic Fe(III) reduction to Fe(II) followed by Ti(IV) substitution in the octahedral sublattice is confirmedmore » by the X-ray absorption spectra. All of the Fe{sub 3−x}Ti{sub x}O{sub 4} films (x = 0.6–0.8) exhibit ferrimagnetism above room temperature. Next, the spin-glass behaviors of Ti-rich Fe{sub 2.2}Ti{sub 0.8}O{sub 4} film are studied, since this magnetically diluted system is expected to exhibit the spin-glass behaviors. The DC magnetization and AC susceptibility measurements for the Ti-rich Fe{sub 2.2}Ti{sub 0.8}O{sub 4} film reveal the presence of the spin glass phase. Thermal- and magnetic-field-history memory effects are observed and are attributed to the long time-decay nature of remanent magnetization. The detailed analysis of the time-dependent thermoremanent magnetization reveals the presence of the cluster spin glass state.« less

Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

2018-03-01

For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

Structural study of Mg doped cobalt ferrite thin films on ITO coated glass substrate

NASA Astrophysics Data System (ADS)

Suthar, Mahesh; Bapna, Komal; Kumar, Kishor; Ahuja, B. L.

2018-05-01

We have synthesized thin films of Co1-xMgxFe2O4 (x = 0, 0.4, 0.6, 0.8, 1) on transparent conducting indium tin oxide (ITO) coated glass substrate by pulsed laser deposition method. The structural properties of the grown films were analyzed by the X-ray diffraction and Raman spectroscopy, which suggest the single phase growth of these films. Raman spectra revealed the incorporation of Mg ions into CoFe2O4 lattice and suggest that the Mg ions initially go both to the octahedral and tetrahedral sites upto a certain concentration. For higher concentration, Mg ions prefer to occupy the tetrahedral sites.

Superconductor-insulator quantum phase transition in disordered FeSe thin films.

PubMed

Schneider, R; Zaitsev, A G; Fuchs, D; V Löhneysen, H

2012-06-22

The evolution of two-dimensional electronic transport with increasing disorder in epitaxial FeSe thin films is studied. Disorder is generated by reducing the film thickness. The extreme sensitivity of the films to disorder results in a superconductor-insulator transition. The finite-size scaling analysis in the critical regime based on the Bose-glass model strongly supports the idea of a continuous quantum phase transition. The obtained value for the critical-exponent product of approximately 7/3 suggests that the transition is governed by quantum percolation. Finite-size scaling with the same critical-exponent product is also substantiated when the superconductor-insulator transition is tuned with an applied magnetic field.

Magnetic spin structure and magnetoelectric coupling in BiFeO{sub 3}-BaTiO{sub 3} multilayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazenka, Vera, E-mail: Vera.Lazenka@fys.kuleuven.be; Modarresi, Hiwa; Bisht, Manisha

2015-02-23

Magnetic spin structures in epitaxial BiFeO{sub 3} single layer and an epitaxial BaTiO{sub 3}/BiFeO{sub 3} multilayer thin film have been studied by means of nuclear resonant scattering of synchrotron radiation. We demonstrate a spin reorientation in the 15 × [BaTiO{sub 3}/BiFeO{sub 3}] multilayer compared to the single BiFeO{sub 3} thin film. Whereas in the BiFeO{sub 3} film, the net magnetic moment m{sup →} lies in the (1–10) plane, identical to the bulk, m{sup →} in the multilayer points to different polar and azimuthal directions. This spin reorientation indicates that strain and interfaces play a significant role in tuning the magnetic spin order.more » Furthermore, large difference in the magnetic field dependence of the magnetoelectric coefficient observed between the BiFeO{sub 3} single layer and multilayer can be associated with this magnetic spin reorientation.« less

Self-Assembly of Magnetic Nanoparticles at the Surface and Within Block Copolymer Films

NASA Astrophysics Data System (ADS)

Xu, Chen; Ohno, Kohji; Composto, Russell

2007-03-01

We investigate the self-assembly of magnetic Fe3O4 nanoparticles in thin films of a symmetric block copolymer of poly(styrene-b-methyl methacrylate), PS-b-PMMA (75 kg/mol). The Fe3O4 nanoparticles (4nm) are grafted by poly(methyl methacrylate) (PMMA) (2.7 kg/mol) brushes to improve their compatibility. The weight percent of Fe3O4 in PS-b-PMMA is 1, 4 and 10. The Fe3O4 reside at the intermaterial dividing surface and also form small disk-like aggregates within the PMMA phase. The addition of Fe3O4 slows down the transition from perpendicular to parallel lamellae morphology at the surface and slowing down increases as weight percent Fe3O4 increases. Using cross-sectional TEM, nanoparticles are found to be rejected from the parallel lamellae and gather preferentially within the perpendicular lamellae. These studies demonstrate that the Fe3O4 particles influence thin film morphology and visa versa. Because of widespread interest in nanodevices, this study shows that arrays of functional nanoparticles can be formed using block copolymer templates.

Influence of an Interfacial Effect on the Laser Performance of a Rhodamine 6G/Cellulose Acetate Waveguide on a Vinylidene Fluoride Copolymer Layer.

PubMed

Tsutsumi, Naoto; Hirano, Yoshinori; Kinashi, Kenji; Sakai, Wataru

2018-06-12

The fluorescent properties of dyes and fluorophores in condensed matter significantly affect the laser performance of organic dye lasers and fluorescent polymer lasers. Concentration quenching of fluorescence is commonly observed in condensed matter. Several approaches have been presented to suppress such quenching, such as the use of a dendrimer and the use of effective energy transfer in a guest-host system. The enhanced fluorescence of rhodamine 6G (R6G) dye on a vinylidene fluoride polymer is an alternative method for enhancing laser performance because of the roughness of the P(VDF-TrFE) surface and the interaction between polar β-crystals of P(VDF-TrFE) and R6G dye. In this paper, a significant improvement in slope efficiency (SE) is demonstrated without a significant depression in the lasing threshold for distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers fabricated using an R6G-dispersed cellulose acetate (CA) matrix spin-coated onto a copolymer of vinylidene fluoride and trifluoroethylene P(VDF-TrFE) thin film. SEs of 3.4 and 1.3% were measured for DBR and DFB laser devices with CA/R6G on a P(VDF-TrFE) thin film, respectively, whereas an SE of less than 1.0% was measured for both corresponding laser devices without a P(VDF-TrFE) thin film. From the aspect of simple fabrication procedures, repeatability in device fabrication and performance, stability of the device, time for device fabrication, the present approach is the most preferable way for industrial applications, requiring only the additional step of spin-coating of a P(VDF-TrFE) thin film.

Characteristics and anticorrosion performance of Fe-doped TiO2 films by liquid phase deposition method

NASA Astrophysics Data System (ADS)

Liu, Yu; Xu, Chao; Feng, ZuDe

2014-09-01

Fe-doped TiO2 thin films were fabricated by liquid phase deposition (LPD) method, using Fe(III) nitrate as both Fe element source and fluoride scavenger instead of commonly-used boric acid (H3BO3). Scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-vis spectrum were employed to examine the effects of Fe element on morphology, structure and optical characteristics of TiO2 films. The as-prepared films were served as photoanode applied to photogenerated cathodic protection of SUS304 stainless steel (304SS). It was observed that the photoelectrochemical properties of the as-prepared films were enhanced with the addition of Fe element compared to the undoped TiO2 film. The highest photoactivity was achieved for Ti13Fe (Fe/Ti = 3 molar ratio) film prepared in precursor bath containing 0.02 M TiF4 + 0.06 M Fe(NO3)3 under white-light illumination. The effective anticorrosion behaviors can be attributed to the Fe element incorporation which decreases the probability of photogenerated charge-carrier recombination and extends the light response range of Fe-doped TiO2 films appeared to visible-light region.

Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Enriquez, Erik M.; Zhang, Yingying; Chen, Aiping

2016-08-26

Epitaxial layered ternary metal-nitride FeMoN 2, (Fe 0.33 Mo 0.67)MoN 2, CoMoN 2, and FeWN 2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN 2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has beenmore » used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN 2 materials through A and B-site substitution.« less

BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

NASA Astrophysics Data System (ADS)

Won, Sung Sik; Kawahara, Masami; Kuhn, Lindsay; Venugopal, Vineeth; Kwak, Jiyeon; Kim, Ill Won; Kingon, Angus I.; Kim, Seung-Hyun

2017-04-01

Environmentally benign lead-free ferroelectric (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 (KNMN) thin film capacitors with a small concentration of a BiFeO3 (BF) dopant were prepared by a cost effective chemical solution deposition method for high energy density storage device applications. 6 mol. % BF-doped KNMN thin films showed very slim hysteresis loops with high maximum and near-zero remanent polarization values due to a phase transition from the orthorhombic structure to the pseudo-cubic structure. Increasing the electric field up to 2 MV/cm, the total energy storage density (Jtotal), the effective recoverable energy density (Jeff), and the energy conversion efficiency (η) of lead-free KNMN-BF thin film capacitors were 31.0 J/cm3, 28.0 J/cm3, and 90.3%, respectively. In addition, these thin film capacitors exhibited a fast discharge time of a few μs and a high temperature stability up to 200 °C, proving their strong potential for high energy density storage and conversion applications.

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

Preparation of high-quality planar FeRh thin films for in situ TEM investigations

NASA Astrophysics Data System (ADS)

Almeida, Trevor P.; McGrouther, Damien; Pivak, Yevheniy; Perez Garza, Hector Hugo; Temple, Rowan; Massey, Jamie; Marrows, Christopher H.; McVitie, Stephen

2017-10-01

The preparation of a planar FeRh thin film using a focused ion beam (FIB) secondary electron microscope (SEM) for the purpose of in situ transmission electron microscopy (TEM) is presented. A custom SEM stub with 45° faces allows for the transfer and milling of the sample on a TEM heating chip, whilst Fresnel imaging within the TEM revealed the presence of the magnetic domain walls, confirming the quality of the FIB-prepared sample.

Structural, chemical, and magnetic properties of Fe films grown on InAs(100)

NASA Astrophysics Data System (ADS)

Ruppel, L.; Witte, G.; Wöll, Ch.; Last, T.; Fischer, S. F.; Kunze, U.

2002-12-01

The structure of epitaxial Fe films grown on an InAs(100)-c(8×2)/(4×2) surface has been studied in situ by means of low-energy electron diffraction and x-ray photoelectron spectroscopy, while their magnetic properties were characterized ex situ by superconducting quantum interference device magnetometry at temperatures of 5 300 K. Deposition of iron at room temperature or below leads to the formation of a thin iron arsenide layer that floats on the Fe film upon further deposition. Postdeposition annealing causes no significant improvement of the film structure but activates a further arsenic diffusion through the Fe film. Significant exchange-bias effects were found at low temperatures for insufficiently capped and partially oxidized Fe films, and are attributed to noncollinear spin order at the Ag capping layer/Fe interface. For perfect, nonoxidized Fe films, such a noncollinear spin order at the Fe/InAs interface is excluded as no thermomagnetic irreversibilities were found. This indicates that the spin order at the Fe/InAs interface is suitable for spin injection.

Impact of lattice dynamics on the phase stability of metamagnetic FeRh: Bulk and thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolloch, M.; Gruner, M. E.; Keune, W.

2016-11-01

We present phonon dispersions, element-resolved vibrational density of states (VDOS) and corresponding thermodynamic properties obtained by a combination of density functional theory (DFT) and nuclear resonant inelastic x-ray scattering (NRIXS) across the metamagnetic transition of B2 FeRh in the bulk material and thin epitaxial films. We see distinct differences in the VDOS of the antiferromagnetic (AF) and ferromagnetic (FM) phases, which provide a microscopic proof of strong spin-phonon coupling in FeRh. The FM VDOS exhibits a particular sensitivity to the slight tetragonal distortions present in epitaxial films, which is not encountered in the AF phase. This results in a notablemore » change in lattice entropy, which is important for the comparison between thin film and bulk results. Our calculations confirm the recently reported lattice instability in the AF phase. The imaginary frequencies at the X point depend critically on the Fe magnetic moment and atomic volume. Analyzing these nonvibrational modes leads to the discovery of a stable monoclinic ground-state structure, which is robustly predicted from DFT but not verified in our thin film experiments. Specific heat, entropy, and free energy calculated within the quasiharmonic approximation suggest that the new phase is possibly suppressed because of its relatively smaller lattice entropy. In the bulk phase, lattice vibrations contribute with the same sign and in similar magnitude to the isostructural AF-FM phase transition as excitations of the electronic and magnetic subsystems demonstrating that lattice degrees of freedom need to be included in thermodynamic modeling.« less

Nanocube-based hematite photoanode produced in the presence of Na2HPO4 for efficient solar water splitting

NASA Astrophysics Data System (ADS)

Liu, Kan; Wang, Hongyan; Wu, Quanping; Zhao, Jun; Sun, Zhe; Xue, Song

2015-06-01

A thin film of α-Fe2O3 on FTO substrate has been synthesized from hydrothermal process in an aqueous solution of FeCl3 and Na2HPO4. A nanocube structure of α-Fe2O3 is observed within the formed hematite films and coated with phosphate ions on the surface. For comparison, another phosphate modified hematite film has been prepared by soaking the bare hematite film in Na2HPO4 solution. A negative electrostatic field can be built up on the surface of both phosphate modified hematite which will promote charge separation and extraction of photoexcited holes to the electrode surface. It is found that different types of phosphate complex exist in the hematite films, which has been determined by the isoelectric point (IEP) of the hematite films, and consequently influences the formation and strength of the electrostatic field. The effects of phosphate ions on the morphology, surface characteristics and the photoelectrochemical properties of the hematite thin films are investigated and the mechanism is proposed.

Local Structure and Anisotropy in the Amorphous Precursor= to Ba-Hexaferrite Thin Films

NASA Astrophysics Data System (ADS)

Snyder, J. E.; Harris, V. G.; Koon, N. C.; Sui, X.; Kryder, M. H.

1996-03-01

Ba-hexaferrite thin-films for recording media applications are commonly fabricated by a two-step process: sputter-deposition of an amorphous precursor, followed by annealing to crystallize the BaFe_12O_19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional characterization techniques (x-ray diffraction and TEM) have been unable to observe any structure in the amorphous precursor films. In this study, such films are investigated by PD-EXAFS (polarization-dependent extended x-ray absorption fine structure). An anisotropic local ordered structure is observed around both Fe and Ba atoms in the "amorphous" films. This anisotropic local structure appears to determine the orientation of the fast-growing basal plane directions during crystallization, and thus the directions of the c-axes and the magnetic anisotropy. Results suggest that the structure of the amorphous films consists of networks made up of units of Fe atoms surrounded by their O nearest neighbors, that are connected together. Ba atoms appear to fit into in-between spaces as network-modifiers.

Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes Held in Santa Fe, New Mexico on 11-13 February 1991

DTIC Science & Technology

1992-05-22

as semiconductor material. Impor- tant applications are thin film solar cells, thin film transistors for liquid crystal displays, photoreceptors for...171, 1989. 307-311 3 T.MINAMI, H.NANTO and S.TAKATA, Thin Solid Films, Vol.124, 1985. 43-47 4 D.Z.DA, F.R.ZHU and H.S.TANG, Acta Energiae Solaris

Perpendicular magnetic anisotropy and spin reorientation transition in L1{sub 0} FePt films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Jae Young; Lee, Nyun Jong; Kim, Tae Hee

2011-04-01

We investigated the thickness and composition dependence of perpendicular magnetic anisotropy (PMA) in L1{sub 0} Fe{sub 1-x}Pt{sub x} (x = 0.4, 0.5, and 0.55) films. The FePt films with different thicknesses of 35 and 70 A were grown at the substrate temperature T{sub s} = 300 deg. C by molecular beam epitaxy coevaporation technique. A (001)-oriented epitaxial L1{sub 0} FePt film was grown on the thin (001)-oriented fcc Pt layer, while a poorly crystallized FePt film was formed on the (111)-textured Pt layer. Our results showed that, at a fixed thickness of 70 A, the PMA of FePt alloy filmsmore » is enhanced as Pt content increases from 40% to 55%.« less

Dependence of the Thermal Conductivity of BiFeO3 Thin Films on Polarization and Structure

NASA Astrophysics Data System (ADS)

Ning, Shuai; Huberman, Samuel C.; Zhang, Chen; Zhang, Zhengjun; Chen, Gang; Ross, Caroline A.

2017-11-01

The role of the ferroelectric polarization state and crystal structure in determining the room-temperature thermal conductivity of epitaxial BiFeO3 thin films is investigated. The ferroelectric domain configuration is varied by changing the oxygen partial pressure during growth, as well as by polarizing the samples by the application of an in situ electric field during the thermal conductivity measurement. However, little or no dependence of thermal conductivity on the ferroelectric domain structure is observed. In contrast, the thermal conductivity significantly depends on the morphotropic phase structure, being about 2 /3 as large in tetragonal-like compared to rhombohedral-like BiFeO3 film. The substantial structural dependence of thermal conductivity found here may provide a route to reversible manipulation of thermal properties.

Growth, structure, and properties of epitaxial thin films of first-principles predicted multiferroic Bi2FeCrO6

NASA Astrophysics Data System (ADS)

Nechache, Riad; Harnagea, Catalin; Pignolet, Alain; Normandin, François; Veres, Teodor; Carignan, Louis-Philippe; Ménard, David

2006-09-01

The authors report the structural and physical properties of epitaxial Bi2FeCrO6 thin films on epitaxial SrRuO3 grown on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The 300nm thick films exhibit both ferroelectricity and magnetism at room temperature with a maximum dielectric polarization of 2.8μC /cm2 at Emax=82kV/cm and a saturated magnetization of 20emu/cm3 (corresponding to ˜0.26μB per rhombohedral unit cell), with coercive fields below 100Oe. The results confirm the predictions made using ab initio calculations about the existence of multiferroic properties in Bi2FeCrO6.

Magnetic core/shell nanoparticle thin films deposited by MAPLE: Investigation by chemical, morphological and in vitro biological assays

NASA Astrophysics Data System (ADS)

Cristescu, R.; Popescu, C.; Socol, G.; Iordache, I.; Mihailescu, I. N.; Mihaiescu, D. E.; Grumezescu, A. M.; Balan, A.; Stamatin, I.; Chifiriuc, C.; Bleotu, C.; Saviuc, C.; Popa, M.; Chrisey, D. B.

2012-09-01

We report on thin film deposition of nanostructured Fe3O4/oleic acid/ceftriaxone and Fe3O4/oleic acid/cefepime nanoparticles (core/shell/adsorption-shell) were fabricated by matrix assisted pulsed laser evaporation (MAPLE) onto inert substrates. The thin films were characterized by profilometry, Fourier transform infrared spectroscopy, atomic force microscopy, and investigated by in vitro biological assays. The biological properties tested included the investigation of the microbial viability and the microbial adherence to the glass coverslip nanoparticle film, using Gram-negative and Gram-positive bacterial strains with known antibiotic susceptibility behavior, the microbial adherence to the HeLa cells monolayer grown on the nanoparticle pellicle, and the cytotoxicity on eukaryotic cells. The proposed system, based on MAPLE, could be used for the development of novel anti-microbial materials or strategies for fighting pathogenic biofilms frequently implicated in the etiology of biofilm associated chronic infections.

High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

NASA Astrophysics Data System (ADS)

Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

2017-07-01

Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

Influence of Ti Content on the Partial Oxidation of TixFeCoNi Thin Films in Vacuum Annealing

PubMed Central

Yang, Ya-Chu; Yeh, Jien-Wei; Tsau, Chun-Huei

2017-01-01

This study investigated the effects of Ti content and vacuum annealing on the microstructure evolution of TixFeCoNi (x = 0, 0.5, and 1) thin films and the underlying mechanisms. The as-deposited thin film transformed from an FCC (face center cubic) structure at x = 0 into an amorphous structure at x = 1, which can be explained by determining topological instability and a hard ball model. After annealing was performed at 1000 °C for 30 min, the films presented a layered structure comprising metal solid solutions and oxygen-deficient oxides, which can be major attributed to oxygen traces in the vacuum furnace. Different Ti contents provided various phase separation and layered structures. The underlying mechanism is mainly related to the competition among possible oxides in terms of free energy production at 1000 °C. PMID:28953244

Engineering On-Surface Spin Crossover: Spin-State Switching in a Self-Assembled Film of Vacuum-Sublimable Functional Molecule.

PubMed

Kumar, Kuppusamy Senthil; Studniarek, Michał; Heinrich, Benoît; Arabski, Jacek; Schmerber, Guy; Bowen, Martin; Boukari, Samy; Beaurepaire, Eric; Dreiser, Jan; Ruben, Mario

2018-03-01

The realization of spin-crossover (SCO)-based applications requires study of the spin-state switching characteristics of SCO complex molecules within nanostructured environments, especially on surfaces. Except for a very few cases, the SCO of a surface-bound thin molecular film is either quenched or heavily altered due to: (i) molecule-surface interactions and (ii) differing intermolecular interactions in films relative to the bulk. By fabricating SCO complexes on a weakly interacting surface, the interfacial quenching problem is tackled. However, engineering intermolecular interactions in thin SCO active films is rather difficult. Here, a molecular self-assembly strategy is proposed to fabricate thin spin-switchable surface-bound films with programmable intermolecular interactions. Molecular engineering of the parent complex system [Fe(H 2 B(pz) 2 ) 2 (bpy)] (pz = pyrazole, bpy = 2,2'-bipyridine) with a dodecyl (C 12 ) alkyl chain yields a classical amphiphile-like functional and vacuum-sublimable charge-neutral Fe II complex, [Fe(H 2 B(pz) 2 ) 2 (C 12 -bpy)] (C 12 -bpy = dodecyl[2,2'-bipyridine]-5-carboxylate). Both the bulk powder and 10 nm thin films sublimed onto either quartz glass or SiO x surfaces of the complex show comparable spin-state switching characteristics mediated by similar lamellar bilayer like self-assembly/molecular interactions. This unprecedented observation augurs well for the development of SCO-based applications, especially in molecular spintronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization Of PVDF-TrFE Processing Conditions For The Fabrication Of Organic MEMS Resonators

PubMed Central

Ducrot, Pierre-Henri; Dufour, Isabelle; Ayela, Cédric

2016-01-01

This paper reports a systematic optimization of processing conditions of PVDF-TrFE piezoelectric thin films, used as integrated transducers in organic MEMS resonators. Indeed, despite data on electromechanical properties of PVDF found in the literature, optimized processing conditions that lead to these properties remain only partially described. In this work, a rigorous optimization of parameters enabling state-of-the-art piezoelectric properties of PVDF-TrFE thin films has been performed via the evaluation of the actuation performance of MEMS resonators. Conditions such as annealing duration, poling field and poling duration have been optimized and repeatability of the process has been demonstrated. PMID:26792224

Optimization Of PVDF-TrFE Processing Conditions For The Fabrication Of Organic MEMS Resonators.

PubMed

Ducrot, Pierre-Henri; Dufour, Isabelle; Ayela, Cédric

2016-01-21

This paper reports a systematic optimization of processing conditions of PVDF-TrFE piezoelectric thin films, used as integrated transducers in organic MEMS resonators. Indeed, despite data on electromechanical properties of PVDF found in the literature, optimized processing conditions that lead to these properties remain only partially described. In this work, a rigorous optimization of parameters enabling state-of-the-art piezoelectric properties of PVDF-TrFE thin films has been performed via the evaluation of the actuation performance of MEMS resonators. Conditions such as annealing duration, poling field and poling duration have been optimized and repeatability of the process has been demonstrated.

Ion-beam-induced magnetic and structural phase transformation of Ni-stabilized face-centered-cubic Fe films on Cu(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gloss, Jonas; Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2, 616 69 Brno; Shah Zaman, Sameena

2013-12-23

Metastable face-centered cubic (fcc) Fe/Cu(100) thin films are good candidates for ion-beam magnetic patterning due to their magnetic transformation upon ion-beam irradiation. However, pure fcc Fe films undergo spontaneous transformation when their thickness exceeds 10 ML. This limit can be extended to approximately 22 ML by deposition of Fe at increased CO background pressures. We show that much thicker films can be grown by alloying with Ni for stabilizing the fcc γ phase. The amount of Ni necessary to stabilize nonmagnetic, transformable fcc Fe films in dependence on the residual background pressure during the deposition is determined and a phasemore » diagram revealing the transformable region is presented.« less

Tuning the Curie temperature of L 1 0 ordered FePt thin films through site-specific substitution of Rh

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Dongbin; Sun, Cheng-Jun; Chen, Jing-Sheng

2014-10-14

In structurally ordered magnetic thin films, the Curie temperature (TC) of ferromagnetic films depends on the exchange integral of the short range ordered neighboring atoms. The exchange integral may be adjusted by controlling elemental substitutional concentration at the lattice site of interest. We show how to control the TC in high anisotropy L10 Fe50Pt50 magnetic thin films by substituting Rh into the Pt site. Rh substitution in L10 FePt modified the local atomic environment and corresponding electronic properties while retaining the ordered L10 phase. The analysis of extended x-ray Absorption Fine Structure (EXAFS) spectra shows that Rh uniformly substitutes formore » Pt in L10 FePt. With 15 at. % of Rh substitution, temperature-dependent magnetic measurements show that the saturation magnetization (Ms) decreases from 1152 emu/cc to 670 emu/cc, the magnetocrystalline anisotropy (Ku) drops from 5×107 erg/cc to 2×107 erg/cc, and TC decreased from 750 to 500 K. A model of antiferromagnetic (AFM) defects caused by controlled Rh substitution of the Pt site, reducing the TC, is proposed to interpret this phenomenon and the validity is further examined by ab initio density functional calculations.« less

Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2017-12-01

Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

Roughness-Induced Magnetic Domain in Fe Thin Films on Land-and-Groove Structures Studied by Spin-Polarized Secondary Electron Microscopy

NASA Astrophysics Data System (ADS)

Ueda, Shigenori; Iwasaki, Yoh; Ushioda, Sukekatsu

2003-10-01

The magnetic domain structures of Fe thin films on two-dimensionally arranged land-and-groove structures have been studied by spin-polarized secondary electron microscopy (SP-SEM) under an applied dc field. The coercive force on the land area was found to be higher than that on the groove area under magnetization reversal. The surface roughness measured by atomic force microscopy (AFM) was greater on the land area than on the groove area. The roughness-induced high-coercivity on the land prevented the reversed magnetic domain on the groove from spreading over the land in the initial magnetization reversal. This result indicates that surface roughness is an important factor in domain size control of thin magnetic films.

Temperature dependent structural and magnetic study of Co-sputtered Fe-Al thin film

NASA Astrophysics Data System (ADS)

Vyas, Anupam; Brajpuriya, Ranjeet

2017-05-01

The authors have deposited co-sputtered Fe-Al thin film on a glass substrate. It is the first ever reporting of Fe and Al co-sputtering in an Argon atmosphere under vacuum conditions. The sample was annealed at 200°C, 300°C, 400°C, so as to allow different phase formation in it. To study the structural and magnetic properties of the samples the GIXRD, XRR and MOKE measurements were done. After annealing at 400°C we observed disordered FeAl formation and which after further converted to more ordered phase which is also confirmed from reflectivity measurements. The magnetic measurement shows the magnetic nature of the sample even after annealing at 400°C/5hr.

Temperature dependence dynamical permeability characterization of magnetic thin film using near-field microwave microscopy

NASA Astrophysics Data System (ADS)

Hung, Le Thanh; Phuoc, Nguyen N.; Wang, Xuan-Cong; Ong, C. K.

2011-08-01

A temperature dependence characterization system of microwave permeability of magnetic thin film up to 5 GHz in the temperature range from room temperature up to 423 K is designed and fabricated as a prototype measurement fixture. It is based on the near field microwave microscopy technique (NFMM). The scaling coefficient of the fixture can be determined by (i) calibrating the NFMM with a standard sample whose permeability is known; (ii) by calibrating the NFMM with an established dynamic permeability measurement technique such as shorted microstrip transmission line perturbation method; (iii) adjusting the real part of the complex permeability at low frequency to fit the value of initial permeability. The algorithms for calculating the complex permeability of magnetic thin films are analyzed. A 100 nm thick FeTaN thin film deposited on Si substrate by sputtering method is characterized using the fixture. The room temperature permeability results of the FeTaN film agree well with results obtained from the established short-circuited microstrip perturbation method. Temperature dependence permeability results fit well with the Landau-Lifshitz-Gilbert equation. The temperature dependence of the static magnetic anisotropy H_K^{sta}, the dynamic magnetic anisotropy H_K^{dyn}, the rotational anisotropy Hrot, together with the effective damping coefficient αeff, ferromagnetic resonance fFMR, and frequency linewidth Δf of the thin film are investigated. These temperature dependent magnetic properties of the magnetic thin film are important to the high frequency applications of magnetic devices at high temperatures.

Titanium nitride as a seed layer for Heusler compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niesen, Alessia, E-mail: aniesen@physik.uni-bielefeld.de; Glas, Manuel; Ludwig, Jana

Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn{sub 2.45}Ga as well as in- and out-of-plane magnetized Co{sub 2}FeAl thin films were depositedmore » on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn{sub 2.45}Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co{sub 2}FeAl. TiN buffered Mn{sub 2.45}Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co{sub 2}FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.« less

Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-01-01

We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

The temperature dependence of magnetic anisotropy of Nd-Fe-B thin films

NASA Astrophysics Data System (ADS)

Sato, Takuya; Hashimoto, Ryuji; Tanaka, Yoshitomo; Suzuki, Kenichi; Enokido, Yasushi; Choi, Kyung-Ku; Suzuki, Takao

2018-05-01

The magnetic properties of Nd-Fe-B thin films with the three different compositions (#1: Nd12.6Fe81.5B5.9, #2: Nd14.6Fe78.1B7.4 and #3: Nd22.6Fe66.2B11.2) are discussed. With increasing Nd content, the c-axis orientation along the film normal is enhanced. It is found that sample #2 possesses the saturation magnetization Ms very close to that for Nd2Fe14B over a temperature range from 100 to about 300K. The magnetic anisotropy constant Ku2 for sample #2 is the highest among those samples, but smaller by about 20%, as compared to that for Nd2Fe14B. It is of interest to note that the temperature TR at which Ku1 changes its sign is lower by about 30K as compared to that previously reported for Nd2Fe14B. The reason for this discrepancy is not clear, but could be due to the presence of the minority phases of Nd-rich compounds and also a possible contribution of the magneto-elastic effect to the net magnetic anisotropy.

Temperature dependence of the exchange coupling in the Fe(001) whisker/11 ML Cr/20 ML Fe structure

NASA Astrophysics Data System (ADS)

From, M.; Liao, L. X.; Cochran, J. F.; Heinrich, B.

1994-05-01

The exchange coupling between iron layers separated by 11 monolayers (ML) of Cr(001) has been investigated using a structure in which the Cr(001) was grown on a bulk iron whisker Fe(001) surface at a temperature of approximately 300 °C. This temperature was selected to produce near optimum smoothness of the Cr layer. The Cr(001) deposition was followed by the deposition of 20 ML of Fe(001) at room temperature, and by the deposition of a 20 ML Au(001) protective layer. The frequencies corresponding to the magnetic excitations in this structure were measured by means of Brillouin light scattering (BLS). One of the observed frequencies corresponds to a surface mode in the bulk iron whisker. Another observed frequency corresponds to the lowest lying precessional mode of the magnetization in the 20 ML thick Fe(001) thin film. Typically, the thin film frequency exhibits a dependence on applied magnetic field that displays two cusps. The positions of the cusps are dependent on the exchange coupling between the 20 ML Fe film and the bulk iron substrate. The surface mode frequency increases monotonically with increasing field over most of the field range investigated. However, at the field corresponding to the low field cusp in the thin film frequency, the surface mode frequency undergoes an abrupt jump in magnitude. We have used the position of the cusps in the thin film data to deduce values for the bilinear, J1, and biquadratic, J2, coupling terms, where the coupling energy is written in the form EAB=-J1 cos(Δφ)+J2 cos2(Δφ); Δφ is the angle between the thin film and bulk iron magnetizations. Measurements of J1 and J2 have been carried out at six temperatures that span the range 100-350 K. Both J1 and J2 are found to depend strongly on temperature. The data are well described by the quadratic expression J2=-0.54+1.46 ×‖J1‖-0.52×J12, where J1 and J2 are expressed in erg/cm2. The large nonzero intercept and the linear term probably imply a significant intrinsic contribution to the biquadratic exchange.

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

PubMed

Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

2012-01-05

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

Structural and electronic properties of ultrathin FeSe films grown on Bi2Se3(0 0 0 1) studied by STM/STS

NASA Astrophysics Data System (ADS)

Singh, Udai Raj; Warmuth, Jonas; Markmann, Verena; Wiebe, Jens; Wiesendanger, Roland

2017-01-01

We report scanning tunnelling microscopy and spectroscopy (STM/STS) studies on one and two unit cell (UC) high FeSe thin films grown on Bi2Se3(0 0 0 1). In our thin films, we find the tetragonal phase of FeSe and dumb-bell shaped defects oriented along Se-Se bond directions. In addition, we observe striped moiré patterns with a periodicity of (7.3  ±  0.1) nm generated by the mismatch between the FeSe lattice and the Bi2Se3 lattice. We could not find any signature of a superconducting gap in the tunneling spectra measured on the surface of one and two UC thick islands of FeSe down to 6.5 K. The spectra rather show an asymmetric behavior across and a finite density of states at the Fermi level (E F) resembling those taken in the normal state of bulk FeSe.

Substitution effects on the ferroelectric properties of BiFeO3 thin films prepared by chemical solution deposition

NASA Astrophysics Data System (ADS)

Kim, Jong Kuk; Kim, Sang Su; Kim, Won-Jeong; Bhalla, Amar S.

2007-01-01

Ferroelectric properties of Cr-substituted BiFeO3 (BFCr) and Pb-cosubstituted BFCr films prepared by a chemical solution deposition method and annealed at 550°C in nitrogen have been studied. X-ray diffraction measurements revealed that the thin films were composed of a rhombohedrally distorted perovskite structure without secondary phases. The 5mol% Pb-cosubstituted BFCr films appeared to have superior ferroelectric properties to those of other BFCr films prepared by the same conditions. The remanent polarization (Pr) and the coercive field (Ec) of the 5mol% Pb-cosubstituted BFCr film were 62μC /cm2 and 235kV/cm, respectively, with a maximum applied field of 712kV/cm. In addition, the film exhibited a fatigue-free behavior up to 1.45×1010 read/write cycles.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Hao-Min; Wang, Huan-Chun; Shen, Yang

Single phase polycrystalline BiFeO{sub 3} thin films were grown on three different substrates via chemical solution deposition. Our results indicate that the band gap of as-prepared BiFeO{sub 3} films can be tuned (2.02–2.67 eV) by the grain size effects caused by the substrates. These BiFeO{sub 3} films show good photocatalytic properties by the degradation of Congo red solution under visible-light irradiation (λ{sub  }> 400 nm). Additionally, weak ferromagnetic behaviors can be observed at room temperature in all the films, which should be correlated to the destruction of the incommensurate cycloid spin structure of BiFeO{sub 3} phase and the coexistence of Fe{sup 3+} andmore » Fe{sup 2+} as confirmed by X-ray photoelectron spectroscopy.« less

Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

NASA Astrophysics Data System (ADS)

Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

2008-03-01

We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

Magnetic and structural characterization of ultra-thin Fe (222) films

NASA Astrophysics Data System (ADS)

Loving, Melissa G.; Brown, Emily E.; Rizzo, Nicholas D.; Ambrose, Thomas F.

2018-05-01

Varied thickness body centered cubic (BCC) ultrathin Fe films (10-50Å) have been sputter deposited onto Si (111) substrates. BCC Fe with the novel (222) texture was obtained by H- terminating the Si (111) starting substrate then immediately depositing the magnetic films. Structural results derived from grazing incidence x-ray diffraction and x-ray reflectivity confirm the crystallographic texture, film thickness, and interface roughness. Magnetic results indicate that Fe (222) exhibits soft magnetic switching (easy axis), high anisotropy (hard axis), which is maintained across the thickness range, and a positive magnetostriction (for the thicker film layers). The observed soft magnetic switching in this system makes it an ideal candidate for future magnetic memory development as well as other microelectronics applications that utilize magnetic materials.

Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As thin films

NASA Astrophysics Data System (ADS)

Sasaki, Daisuke; Anh, Le Duc; Nam Hai, Pham; Tanaka, Masaaki

2014-04-01

We systematically investigated the influence of strain on the electronic structure and ferromagnetism of (In,Fe)As thin films. It is found that while the shift of the critical point energies of compressive-strained (In,Fe)As layers grown on (In1-y,Gay)As (y = 0.05, 0.1) buffer layers can be explained by the hydrostatic deformation effect (HDE) alone, those of tensile-strained (In,Fe)As layers grown on (Ga1-z,Alz)Sb (z = 0, 0.5, 1) buffer layers can be explained by the combination of HDE and the quantum confinement effect (QCE). The Curie temperature TC of the (In,Fe)As layers strongly depends on the strain, and shows a maximum for the (In,Fe)As layer grown on a GaSb buffer layer. The strain dependence of TC can be explained by the s-d exchange mechanism taking into account HDE and QCE.

Highly textured oxypnictide superconducting thin films on metal substrates

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Kurth, Fritz; Chihara, Masashi; Sumiya, Naoki; Grinenko, Vadim; Ichinose, Ataru; Tsukada, Ichiro; Hänisch, Jens; Matias, Vladimir; Hatano, Takafumi; Holzapfel, Bernhard; Ikuta, Hiroshi

2014-10-01

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition-MgO/Y2O3/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (Tc) of 43 K with a self-field critical current density (Jc) of 7.0 × 10 4 A / cm 2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher Tc as well as better crystalline quality than Co-doped BaFe2As2 coated conductors, in-field Jc of NdFeAs(O,F) was lower than that of Co-doped BaFe2As2. These results suggest that grain boundaries in oxypnictides reduce Jc significantly compared to that in Co-doped BaFe2As2 and, hence biaxial texture is necessary for high Jc.

Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buršík, J., E-mail: bursik@iic.cas.cz; Kužel, R.; Knížek, K.

2013-07-15

Thin films of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO{sub 3}(1 1 1) (ST) single crystal substrates using epitaxial SrFe{sub 12}O{sub 19} (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature rampmore » were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO{sub 3} substrate and both hexaferrite phases. - Graphical abstract: XRD pole figure and AFM patterns of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} thin film epitaxially grown on SrTiO{sub 3}(1 1 1) single crystal using seeding layer templating. - Highlights: • Single phase Y-type hexagonal ferrite thin films were prepared by CSD method. • Seed M layer breaks into isolated single crystal islands and serves as a template. • Large seed grains grow by consuming the grains within the bulk of recoated film. • We explained the observed orientation relation of epitaxial domains. • Epitaxial growth on SrTiO{sub 3}(1 1 1) with relation (0 0 1){sub M,Y}//(1 1 1){sub ST}+[1 0 0]{sub M,Y}//[2 −1 −1]{sub ST}.« less

Structural, magnetic and electronic properties of pulsed-laser-deposition grown SrFeO3-δ thin films and SrFeO3-δ /La2/3Ca1/3MnO3 multilayers

NASA Astrophysics Data System (ADS)

Perret, E.; Sen, K.; Khmaladze, J.; Mallett, B. P. P.; Yazdi-Rizi, M.; Marsik, P.; Das, S.; Marozau, I.; Uribe-Laverde, M. A.; de Andrés Prada, R.; Strempfer, J.; Döbeli, M.; Biškup, N.; Varela, M.; Mathis, Y.-L.; Bernhard, C.

2017-12-01

We studied the structural, magnetic and electronic properties of SrFeO3-δ (SFO) thin films and SrFeO3-δ /La2/3 Ca1/3 MnO3 (LCMO) superlattices that have been grown with pulsed laser deposition (PLD) on La0.3 Sr0.7 Al0.65 Ta0.35 O3 (LSAT) substrates. X-ray reflectometry and scanning transmission electron microscopy (STEM) confirm the high structural quality of the films and flat and atomically sharp interfaces of the superlattices. The STEM data also reveal a difference in the interfacial layer stacking with a SrO layer at the LCMO/SFO and a LaO layer at the SFO/LCMO interfaces along the PLD growth direction. The x-ray diffraction (XRD) data suggest that the as grown SFO films and SFO/LCMO superlattices have an oxygen-deficient SrFeO3-δ structure with I4/ mmm space group symmetry (δ≤slant 0.2 ). Subsequent ozone annealed SFO films are consistent with an almost oxygen stoichiometric structure (δ ≈ 0 ). The electronic and magnetic properties of these SFO films are similar to the ones of corresponding single crystals. In particular, the as grown SrFeO3-δ films are insulating whereas the ozone annealed films are metallic. The magneto-resistance effects of the as grown SFO films have a similar magnitude as in the single crystals, but extend over a much wider temperature range. Last but not least, for the SFO/LCMO superlattices we observe a rather large exchange bias effect that varies as a function of the cooling field.

Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phuan, Yi Wen; Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu; Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE

2015-09-15

Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructuredmore » hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the crystallites size increases, the grain boundaries reduce and this suppresses the recombination rate of electron–hole pairs on the nanostructured hematite thin films. As a result, the measured photocurrent densities of nanostructured hematite thin films also increased. The highest measured photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl in 1 M NaOH electrolyte was achieved for the nanostructured hematite thin film annealed at 600 °C. This study had confirmed that strong interdependencies exist between the average hematite nanocrystallites size and grain boundaries with annealing temperature on the eventual PEC water splitting performance of nanostructured hematite thin films. The annealed hematite thin films at a higher temperature will enhance the nanocrystals growth and thus, suppressing the electron–hole pairs recombination rate, lowering the grain boundary resistance and enabling higher photocurrent flow at the molecular level. As a result, the photocurrent density and thus, the overall PEC water splitting performance of the nanostructured hematite thin films are significantly enhanced.« less

The effect of CO2 gas adsorption on the electrical properties of Fe doped TiO2 films

NASA Astrophysics Data System (ADS)

Mardare, Diana; Adomnitei, Catalin; Florea, Daniel; Luca, Dumitru; Yildiz, Abdullah

2017-11-01

CO2 has to be monitored for indoor air quality, being also an important greenhouse gas. The electrical and sensing gas properties of the undoped and Fe doped TiO2 thin films, obtained by RF sputtering, have been investigated in different CO2 atmospheres. It was observed that the response to CO2 increases by Fe doping for the lowest doped film, and then decreases, as the dopant concentration increases. An explanation was given based on multiphonon-assisted hopping model. By studying the films electrical conductivity in front of a certain CO2 atmosphere, we have qualitatively evidenced the semiconducting n-type nature of the films under study, except for the highest Fe doped film which has a p-type behavior. An important finding is that Fe doping determines the decrease of the optimum operating temperature, approaching the room temperature.

EFFECTS OF PRECURSOR SOLUTION MODIFICATION ON THE CRYSTALLINITY AND ELECTRICAL PROPERTIES OF Na0.5Bi0.5TiO3-BiFeO3 BASED THIN FILM

NASA Astrophysics Data System (ADS)

Sui, Huiting; Yang, Changhong; Wang, Gaoyun; Feng, Chao

2014-07-01

For chemical solution decomposition process, the precursor solution is a basic factor affecting the quality of the deposited-film. In this paper, we choose (l00)-oriented 0.7[(Bi0.95Ce0.05)0.5Na0.5(Ti0.99Fe0.01)O3]-0.3BiFe0.97Mn0.03O3(0.7NBTCeFe-0.3BFOMn) thin films prepared by various precursor solutions for investigation. The roles of precursor solution modification on crystallinity, ferroelectric and dielectric properties are characterized. With the addition of polyethylene glycol into the solution, phase-pure perovskite structure can be obtained. Furthermore, when the volume ratio for the solvents (ethylene glycol to acetic acid) is modified as 2:1, enhanced ferroelectricity can be achieved with a remanent polarization (Pr) of 27.5 μC/cm2, which coincides well with the capacitance-voltage curve with relatively sharp feature. Also, the 0.7NBTCeFe-0.3BFOMn film exhibits a dielectric constant (ɛr) of 576 and dielectric loss (tan δ) of 0.123 at 100 kHz.

Auger electron diffraction study of V/Fe(100) interface formation

NASA Astrophysics Data System (ADS)

Huttel, Y.; Avila, J.; Asensio, M. C.; Bencok, P.; Richter, C.; Ilakovac, V.; Heckmann, O.; Hricovini, K.

1998-05-01

Vanadium atoms present a magnetic moment different to zero when they are part of a thin film deposited on Fe or as a bimetallic Fe-V alloy. The understanding of this phenomenon can only be achieved with a correct structural description of these types of systems. We report an Auger electron diffraction investigation of V films grown on body cubic centred (b.c.c.) Fe(100) substrates. Angular-scanned Auger electron diffraction (AED) patterns of V L 23M 23M 4 (473 eV) and Fe L 3VV (703 eV) show the formation of a well-ordered V/Fe interface even at room temperature. The AED patterns of V films in the range of vanadium submonolayer provide evidence of an isotropic Auger emission, indicating the absence of interdiffusion of V atoms into the Fe substrate and absence of cluster growth of the V film. The annealing of these films up to 400°C does not activate the substitution of the topmost Fe surface layers by V atoms.

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp; Yamaguchi, Akihiro; Sakuda, Atsushi

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueousmore » solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.« less

Ferromagnetic resonance linewidth and damping in perpendicular-anisotropy magnetic multilayers thin films

NASA Astrophysics Data System (ADS)

Beaujour, Jean-Marc

2010-03-01

Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe) thin films. We have conducted systematic studies of a variety of thin film materials with perpendicular magnetic anisotropy to investigate the origin of the enhanced FMR linewidths, including Ni/Co and CoFeB/Co/Ni multilayers. In Ni/Co multilayers the PMA was systematically reduced by irradiation with Helium ions, leading to a transition from out-of-plane to in-plane easy axis with increasing He ion fluence [1,2]. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane with an applied in-plane magnetic field. Irradiation of the film with Helium ions decreases the PMA and the distribution of PMA parameters, leading to a large reduction in the FMR linewidth for in-plane magnetization. These results suggest that fluctuations in the PMA lead to a large two magnon scattering contribution to the linewidth for in-plane magnetization and establish that the Gilbert damping is enhanced in such materials (α˜0.04, compared to α˜0.002 for pure Fe) [2]. We compare these results to those on CoFeB/Co/Ni and published results on other thin film materials with PMA [e.g., Ref. 3]. [1] D. Stanescu et al., J. Appl. Phys. 103, 07B529 (2008). [2] J-M. L. Beaujour, D. Ravelosona, I. Tudosa, E. Fullerton, and A. D. Kent, Phys. Rev. B RC 80, 180415 (2009). [3] N. Mo, J. Hohlfeld, M. ulIslam, C. S. Brown, E. Girt, P. Krivosik, W. Tong, A. Rebel, and C. E. Patton, Appl. Phys. Lett. 92, 022506 (2008). *Research done in collaboration with: A. D. Kent, New York University, D. Ravelosona, Institut d'Electronique Fondamentale, UMR CNRS 8622, Universit'e Paris Sud, E. E. Fullerton, Center for Magnetic Recording Research, UCSD, and supported by NSF-DMR-0706322.

Giant Faraday Rotation through Ultrasmall Fe0 n Clusters in Superparamagnetic FeO-SiO2 Vitreous Films.

PubMed

Nakatsuka, Yuko; Pollok, Kilian; Wieduwilt, Torsten; Langenhorst, Falko; Schmidt, Markus A; Fujita, Koji; Murai, Shunsuke; Tanaka, Katsuhisa; Wondraczek, Lothar

2017-04-01

Magnetooptical (MO) glasses and, in particular, Faraday rotators are becoming key components in lasers and optical information processing, light switching, coding, filtering, and sensing. The common design of such Faraday rotator materials follows a simple path: high Faraday rotation is achieved by maximizing the concentration of paramagnetic ion species in a given matrix material. However, this approach has reached its limits in terms of MO performance; hence, glass-based materials can presently not be used efficiently in thin film MO applications. Here, a novel strategy which overcomes this limitation is demonstrated. Using vitreous films of x FeO·(100 - x )SiO 2 , unusually large Faraday rotation has been obtained, beating the performance of any other glassy material by up to two orders of magnitude. It is shown that this is due to the incorporation of small, ferromagnetic clusters of atomic iron which are generated in line during laser deposition and rapid condensation of the thin film, generating superparamagnetism. The size of these clusters underbids the present record of metallic Fe incorporation and experimental verification in glass matrices.

Synthesis of nanocrystalline α-Fe2O3 by using thermal oxidation of Fe Films

NASA Astrophysics Data System (ADS)

Fortas, G.; Saidoun, I.; Abboud, H.; Gabouze, N.; Haine, N.; Manseri, A.; Zergoug, M.; Menari, H.; Sam, S.; Cheraga, H.; Bozetine, I.

2018-03-01

α-Fe2O3 hematite films were prepared by thermal oxidation from Fe films electroplated on silicon. Electrodeposition of Fe thin films was carried out from a sulfate bath containing an ammonium chloride complexing agent. The electrochemical study was performed by cyclic voltammetry. The SEM analysis of the films obtained at a -1.3 V constant polarization shows dendritic grains in the form of islet. The DRX spectra exhibit characteristic iron peaks according to the face centered cubic (Fcc) structure. These samples were annealed. At a temperature of 650 ° C, a single iron oxide phase was well formed, with the hematite structure. The SEM photos show a well-assembled columnar structure with formation of nanowires at the surface of the deposit. The absorbance spectra reveal an absorption features in the ultraviolet range

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

NASA Astrophysics Data System (ADS)

Chandramohan, S.; Kanjilal, A.; Sarangi, S. N.; Majumder, S.; Sathyamoorthy, R.; Som, T.

2010-06-01

We report on effects of Fe implantation doping-induced changes in structural, optical, morphological, and vibrational properties of cadmium sulfide thin films. Films were implanted with 90 keV Fe+ ions at room temperature for a wide range of fluences from 0.1×1016 to 3.6×1016 ions cm-2 (corresponding to 0.38-12.03 at.% of Fe). Glancing angle X-ray diffraction analysis revealed that the implanted Fe atoms tend to supersaturate by occupying the substitutional cationic sites rather than forming metallic clusters or secondary phase precipitates. In addition, Fe doping does not lead to any structural phase transformation although it induces structural disorder and lattice contraction. Optical absorption studies show a reduction in the optical band gap from 2.39 to 2.17 eV with increasing Fe concentration. This is attributed to disorder-induced band tailing in semiconductors and ion-beam-induced grain growth. The strain associated with a lattice contraction is deduced from micro-Raman scattering measurements and is found that size and shape fluctuations of grains, at higher fluences, give rise to inhomogeneity in strain.

Structure and conductivity of epitaxial thin films of barium ferrite and its hydrated form BaFeO2.5-x+δ (OH)2x

NASA Astrophysics Data System (ADS)

Anitha Sukkurji, Parvathy; Molinari, Alan; Benes, Alexander; Loho, Christoph; Sai Kiran Chakravadhanula, Venkata; Garlapati, Suresh Kumar; Kruk, Robert; Clemens, Oliver

2017-03-01

Barium ferrite and its hydrated form (BaFeO2.5-x+δ (OH)2x , BFO) is an interesting cathode material for protonic ceramic fuel cells (PCFC) due to its potential to be both, conducting for electrons and protons. We report on the fabrication of almost epitaxially grown thin films (22 nm) of barium ferrite BaFeO~2.5 (BFO) on Nb-doped SrTiO3 substrates via pulsed laser deposition (PLD), followed by treatment under inert, and subsequently wet inert atmospheres to induce water (respectively proton) incorporation. Microstructure, chemical composition and conducting properties are investigated for the BFO films and their hydrated forms, highlighting the influence of hydration on the conductivity characteristics between ~200-290 K. We find that water incorporation gives a strong enhancement of the conductivity to ~10-9 S cm-1 compared to argon annealed films, inducing electronic and protonic charge carriers at the same time. In comparison to bulk powders, proton conductivity is found to be strongly suppressed in such thin hydrated BFO films, pointing towards the influence of strain on the conductivity, which is evaluated based on a detailed investigation by high-resolution transmission electron microscopy.

Surfaces and Interfaces of Magnetoelectric Oxide Systems

NASA Astrophysics Data System (ADS)

Cao, Shi

Magnetoelectric materials Cr2O3, hexagonal LuFeO 3 and YbFeO3 are studied in this thesis. The surface of chromia (Cr2O3) has a surface electronic structure distinct from the bulk. Our work shows that placing a Cr2O3 single crystal into a single domain state will result in net Cr2O 3 spin polarization at the boundary, even in the presence of a gold overlayer. From the Cr 2p3/2 X-ray magnetic circular dichroism signal, there is clear evidence of interface polarization with overlayers of both Pd and Pt on chromia. Cobalt thin films on Cr2O3(0001) show larger magnetic contrast in magnetic force microscopy indicating enhancement of perpendicular anisotropy induced by Cr2O3. The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3(0001) surfaces has been investigated showing hole doping of few-layer graphene. Density functional theory calculations furthermore confirm the p-type nature of the graphene on top of chromia, and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. The surface termination and the nominal valence states for hexagonal LuFeO3 thin films were characterized. The stable surface terminates in a Fe-O layer. This is consistent wit the results of density functional calculations. The structural transition at about 1000 °C, from the hexagonal to the orthorhombic phase of LuFeO3, has been investigated in thin films of LuFeO3. The electronic structure for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured. Dramatic differences in both the spectral features and the linear dichroism are observed. We have also studied the ferrimagnetism in h-YbFeO3 by measuring the magnetization of Fe and Yb separately. The results directly show antialignment of magnetization of Yb and Fe ions in h-YbFeO3 at low temperature, with an exchange field on Yb of about 17 kOe. All ferrimagnets, by default, are magnetoelectrics. These findings directly demonstrate that ferrimagnetic order exists in h-YbFeO3.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

NASA Astrophysics Data System (ADS)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Advanced thin film thermocouples

NASA Technical Reports Server (NTRS)

Kreider, K. G.; Semancik, S.; Olson, C.

1984-01-01

The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

PubMed

Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M; Cooper, Valentino R

2015-08-01

Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO 3 thin films, which comprises a tetragonal-like ( T ') and an intermediate S ' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T ' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S ' phase is energetically very close to the T ' phase, but is structurally similar to the bulk rhombohedral ( R ) phase. By fully characterizing the intermediate S ' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T ' and S ' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S ' and T ' polymorphs, which have very different octahedral rotation patterns and c / a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO 3 films. Additionally, a blueshift in the band gap when moving from R to S ' to T ' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

Ferromagnetic resonance of facing-target sputtered epitaxial γ‧-Fe4N films: the influence of thickness and substrates

NASA Astrophysics Data System (ADS)

Lai, Zhengxun; Li, Zirun; Liu, Xiang; Bai, Lihui; Tian, Yufeng; Mi, Wenbo

2018-06-01

The microstructure and high frequency properties of facing-target sputtered epitaxial γ‧-Fe4N films were investigated in detail. It was found that the eddy current in ultrathin γ‧-Fe4N films is too small to influence the ferromagnetic resonance (FMR) linewidth, where the linewidth is mostly determined by intrinsic damping and the two-magnon scattering (TMS) process. In relatively thick films, the TMS process can significantly affect the linewidth due to the roughness on the sample surface. However, the TMS process in a thin film is quite weak because of its smooth surface. The Gilbert damping constant of about 0.0135 in our γ‧-Fe4N films is smaller than the experimental value in the previous work. Moreover, substrates can also influence the FMR linewidth of the γ‧-Fe4N films by the TMS process. Besides, the resonance field of polycrystalline γ‧-Fe4N film is larger than the epitaxial ones because of the lack of a magnetic anisotropic field, but the linewidth of the polycrystalline γ‧-Fe4N film is smaller.

Annealing induced low coercivity, nanocrystalline Co-Fe-Si thin films exhibiting inverse cosine angular variation

NASA Astrophysics Data System (ADS)

Hysen, T.; Al-Harthi, Salim; Al-Omari, I. A.; Geetha, P.; Lisha, R.; Ramanujan, R. V.; Sakthikumar, D.; Anantharaman, M. R.

2013-09-01

Co-Fe-Si based films exhibit high magnetic moments and are highly sought after for applications like soft under layers in perpendicular recording media to magneto-electro-mechanical sensor applications. In this work the effect of annealing on structural, morphological and magnetic properties of Co-Fe-Si thin films was investigated. Compositional analysis using X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a native oxide surface layer consisting of oxides of Co, Fe and Si on the surface. The morphology of the as deposited films shows mound like structures conforming to the Volmer-Weber growth model. Nanocrystallisation of amorphous films upon annealing was observed by glancing angle X-ray diffraction and transmission electron microscopy. The evolution of magnetic properties with annealing is explained using the Herzer model. Vibrating sample magnetometry measurements carried out at various angles from 0° to 90° to the applied magnetic field were employed to study the angular variation of coercivity. The angular variation fits the modified Kondorsky model. Interestingly, the coercivity evolution with annealing deduced from magneto-optical Kerr effect studies indicates a reverse trend compared to magetisation observed in the bulk. This can be attributed to a domain wall pinning at native oxide layer on the surface of thin films. The evolution of surface magnetic properties is correlated with morphology evolution probed using atomic force microscopy. The morphology as well as the presence of the native oxide layer dictates the surface magnetic properties and this is corroborated by the apparent difference in the bulk and surface magnetic properties.

Graphene-based copper oxide thin film nanostructures as high-efficiency photocathode for p-type dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Cebeci, Hulya; Urk, Deniz

2017-10-01

Graphene-based p-type dye-sensitized solar cells (p-DSSCs) have been proposed and fabricated using copper oxide urchin-like nanostructures (COUN) as photocathode with an FeS2 counter electrode (CE). COUN composed of Cu2O core sphere and CuO shell nanorods with overall diameters of 2 to 4 μm were grown by a simple hydrothermal method with self-assemble nucleation. It was figured out that the formation of copper oxide core/shell structures could be adjusted by an ammonia additive leading to pH change of the precursor solution. In addition to a photocathode, we also demonstrated FeS2 thin films as an efficient CE material alternative to the conventional Pt CEs in DSSCs. FeS2 nanostructures, with diameters of 50 to 80 nm, were synthesized by a similar hydrothermal approach. FeS2 nanostructures are demonstrated to be an outstanding CE material in p-DSSCs. We report graphene/COUN as photocathode and Pt/FeS2 as CE in p-DSSCs, and results show that the synergetic combination of electrodes in each side (increased interconnectivity between COUN and graphene layer, high surface area, and high catalytic activity of FeS2) increased the power conversion efficiency from 1.56% to 3.14%. The excellent performances of COUN and FeS2 thin film in working and CEs, respectively, make them unique choices among the various photocathode and CE materials studied.

Structural and electrochemical analysis of chemically synthesized microcubic architectured lead selenide thin films

NASA Astrophysics Data System (ADS)

Bhat, T. S.; Shinde, A. V.; Devan, R. S.; Teli, A. M.; Ma, Y. R.; Kim, J. H.; Patil, P. S.

2018-01-01

The present work deals with the synthesis of lead selenide (PbSe) thin films by simple and cost-effective chemical bath deposition method with variation in deposition time. The structural, morphological, and electrochemical properties of as-deposited thin films were examined using characterization techniques such as X-ray diffraction spectroscopy (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy. XRD reveals formation of rock salt phase cubic structured PbSe. FE-SEM images show the formation of microcubic structured morphology. The existence of the PbSe is confirmed from the XPS analysis. On the other hand, CV curves show four reaction peaks corresponding to oxidation [PbSe and Pb(OH)2] and reduction (PbO2 and Pb(OH)2) at the surface of PbSe thin films. The PbSe:2 sample deposited for 80 min. shows maximum specific capacitance of 454 ± 5 F g- 1 obtained at 0.25 mA cm- 2 current density. The maximum energy density of 69 Wh kg- 1 was showed by PbSe:2 electrode with a power density of 1077 W kg- 1. Furthermore, electrochemical impedance studies of PbSe:2 thin film show 80 ± 3% cycling stability even after 500 CV cycles. Such results show the importance of microcubic structured PbSe thin film as an anode in supercapacitor devices.

Detection of current induced spin polarization in epitaxial Bi2Te3 thin film

NASA Astrophysics Data System (ADS)

Dey, Rik; Roy, Anupam; Pramanik, Tanmoy; Rai, Amritesh; Heon Shin, Seung; Majumder, Sarmita; Register, Leonard F.; Banerjee, Sanjay K.

2017-03-01

We electrically detect charge current induced spin polarization on the surface of a molecular beam epitaxy grown Bi2Te3 thin film in a two-terminal device with a ferromagnetic MgO/Fe contact and a nonmagnetic Ti/Au contact. The two-point resistance, measured in an applied magnetic field, shows a hysteresis tracking the magnetization of Fe. A theoretical estimate is obtained for the change in resistance on reversing the magnetization direction of Fe from coupled spin-charge transport equations based on the quantum kinetic theory. The order of magnitude and the sign of the hysteresis are consistent with the spin-polarized surface state of Bi2Te3.

Fabrication and characterization of thin-film phosphor combinatorial libraries

NASA Astrophysics Data System (ADS)

Mordkovich, V. Z.; Jin, Zhengwu; Yamada, Y.; Fukumura, T.; Kawasaki, M.; Koinuma, H.

2002-05-01

The laser molecular beam epitaxy method was employed to fabricate thin-film combinatorial libraries of ZnO-based phosphors on different substrates. Fabrication of both pixel libraries, on the example of Fe-doped ZnO, and spread libraries, on the example of Eu-doped ZnO, has been demonstrated. Screening of the Fe-doped ZnO libraries led to the discovery of weak green cathodoluminescence with the maximum efficiency at the Fe content of 0.58 mol %. Screening of the Eu-doped ZnO libraries led to the discovery of unusual reddish-violet cathodoluminescence which is observed in a broad range of Eu concentration. No photoluminescence was registered in either system.

Domain structure of BiFeO3 thin films grown on patterned SrTiO3(001) substrates

NASA Astrophysics Data System (ADS)

Nakashima, Seiji; Seto, Shota; Kurokawa, Yuta; Fujisawa, Hironori; Shimizu, Masaru

2017-10-01

Recently, new functionalities of ferroelectric domain walls (DWs) have attracted much attention. To realize novel devices using the functionalities of the DWs, techniques to introduce the DWs at arbitrary positions in the ferroelectric thin films are necessary. In this study, we have demonstrated the introduction of the DWs at arbitrary positions in epitaxial BiFeO3 (BFO) thin films using the patterned surface of the SrTiO3 (STO) single-crystal substrate. On the slope pattern of the STO surface, the in-plane orientation of BFO has changed because the in-plane orientation of BFO can be controlled by the step propagation direction of the patterned surface. From the piezoresponse scanning force microscopy and X-ray diffraction reciprocal space mapping results, charged 109° DWs have been introduced into the BFO thin film at the bottom and top of the slope pattern of the STO surface. In addition, the conductivity modulation of the positively charged DW has been observed by current-sensitive atomic force microscopy imaging.

Magneto-optical properties of CoFeB ultrathin films: Effect of Ta buffer and capping layer

NASA Astrophysics Data System (ADS)

Husain, Sajid; Gupta, Nanhe Kumar; Barwal, Vineet; Chaudhary, Sujeet

2018-05-01

The effect of adding Ta as a capping and buffer layer on ultrathin CFB(Co60Fe20B20) thin films has been investigated by magneto-optical Kerr effect. A large difference in the coercivity and saturation field is observed between the single layer CFB(2nm) and Ta(5nm)/CFB(2nm)/Ta(2nm) trilayer structure. In particular, the in-plane anisotropy energy is found to be 90kJ/m3 on CFB(2nm) and 2.22kJ/m3 for Ta(5nm)/CFB(2nm)/Ta(2nm) thin films. Anisotropy energy further reduced to 0.93kJ/m3 on increasing the CFB thinness in trilayer structure i.e., Ta(5nm)/CFB(4nm)/Ta(2nm). Using VSM measurement, the saturation magnetization is found to be 1230±50 kA/m. Low coercivity and anisotropy energy in capped and buffer layer thin films envisage the potential of employing CFB for low field switching applications of the spintronic devices.

Electrochemical vs X-ray Spectroscopic Measurements of NiFe(CN)6 Crystals

NASA Astrophysics Data System (ADS)

Peecher, Benjamin; Hampton, Jennifer

Pseudocapacitive materials like hexacyanoferrate have greater energy storage capabilities than standard capacitors while maintaining an ability to charge and discharge quickly. We modify the surface of an electrodeposited Ni thin film with a layer of hexacyanoferrate. Charging and discharging these modified films using cyclic voltammetry (CV) allows us to measure the electrochemically active Fe in the film. To determine how closely this resembles the full amount of Fe in the film, we measure the films' composition using particle-induced x-ray emission (PIXE). We also vary the amount of Ni deposited, both to compare the electrolysis value of charge deposited to the PIXE measurement of Ni in the film, and also to measure how varying the thickness of the Ni surface affects the presence of Fe in the film. Comparisons of the CV and PIXE measurements show agreement in Ni levels but disagreement in Fe levels. PIXE measurements of Fe in the film have positive correlation with Ni in the film. This correlation between PIXE measurements of Ni and Fe suggests that PIXE provides a reliable measure of Fe in the film. This implies that a variable proportion of total Fe in a given film is electrochemically active. This research was made possible by the Hope College Department of Physics Frissel Research Fund and the National Science Foundation under Grants RUI-DMR-1104725, MRI-CHE-0959282, and MRI/RUI-PHY-0319523.

Development of Novel Magnetic Metal Oxide Films and Carbon Nanotube Materials for Magnetic Device Applications

DTIC Science & Technology

2015-01-23

From these studies we learned that nano wires of Fe grown in the lumens of multi-walled carbon nanotubes ( MWCNTs ) required four times higher 35...studies we learned that nano wires of Fe grown in the lumens of multi-walled carbon nanotubes ( MWCNTs ) required four times higher magnetic field...properties of nano-metric Fe thin films on 325 MgO(100) and nano wires of Fe prepared in the lumens of MWCNTs using magnetron DC-sputtering were studied

Enhancements of magnetic properties and planar magnetoresistance by electric fields in γ-Fe{sub 2}O{sub 3}/MgO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Bin; Qin, Hongwei; Pei, Jinliang

2016-05-23

The treatment of perpendicular electric field upon γ-Fe{sub 2}O{sub 3}/MgO film at room temperature could adjust the magnetic properties (saturation magnetization, magnetic remanence, coercivity, and saturation magnetizing field) of the film. The enhancement of saturation magnetization after the treatment of electric field may be connected with the combined shift effects of Mg ions from MgO to γ-Fe{sub 2}O{sub 3} and O{sup 2−} ions from γ-Fe{sub 2}O{sub 3} to MgO. The negative magnetoresistance of the γ-Fe{sub 2}O{sub 3}/MgO film also enhances with the treatment of perpendicular electric field at room temperature, possibly due to the increasing of electron hopping rate betweenmore » Fe{sup 2+} and Fe{sup 3+}.« less

Temperature and field dependent magnetization studies on nano-crystalline ZnFe2O4 thin films

NASA Astrophysics Data System (ADS)

Sahu, B. N.; Suresh, K. G.; Venkataramani, N.; Prasad, Shiva; Krishnan, R.

2018-05-01

Single phase nano-crystalline zinc ferrite (ZnFe2O4) thin films were deposited on fused quartz substrate using the pulsed laser deposition technique. The films were deposited at different substrate temperatures. The field dependence of magnetization at 10 K shows hysteresis loops for all the samples. Temperature dependence of the field cooled (FC) and zero field cooled (ZFC) magnetization indicated irreversible behavior between the FC and ZFC data, and the irreversibility depends on the measuring magnetic field. The thermo-magnetic irreversibility in the magnetization data is correlated with the magnitude of the applied field and the coercivity (HC) obtained from the M-H loops.

Exchange-coupled hard magnetic Fe-Co/CoPt nanocomposite films fabricated by electro-infiltration

NASA Astrophysics Data System (ADS)

Wen, Xiao; Andrew, Jennifer S.; Arnold, David P.

2017-05-01

This paper introduces a potentially scalable electro-infiltration process to produce exchange-coupled hard magnetic nanocomposite thin films. Fe-Co/CoPt nanocomposite films are fabricated by deposition of CoFe2O4 nanoparticles onto Si substrate, followed by electroplating of CoPt. Samples are subsequently annealed under H2 to reduce the CoFe2O4 to magnetically soft Fe-Co and also induce L10 ordering in the CoPt. Resultant films exhibit 0.97 T saturation magnetization, 0.70 T remanent magnetization, 127 kA/m coercivity and 21.8 kJ/m3 maximum energy density. First order reversal curve (FORC) analysis and δM plot are used to prove the exchange coupling between soft and hard magnetic phases.

Effect of copper and nickel doping on the optical and structural properties of ZnO

NASA Astrophysics Data System (ADS)

Muǧlu, G. Merhan; Sarıtaş, S.; ćakıcı, T.; Şakar, B.; Yıldırım, M.

2017-02-01

The present study is focused on the Cu doped ZnO and Ni doped ZnO dilute magnetic semiconductor thin films. ZnO:Cu and ZnO:Ni thin films were grown by Chemically Spray Pyrolysis (CSP) method on glass substrates. Optical analysis of the films was done spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. The structure, morphology, topology and elemental analysis of ZnO:Cu and ZnO:Ni dilute magnetic thin films were investigated by X-ray diffraction (XRD), Raman Analysis, field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM) techniques, respectively. Also The magnetic properties of the ZnO:Ni thin film was investigated by vibrating sample magnetometer (VSM) method. VSM measurements of ZnO:Ni thin film showed that the ferromagnetic behavior.

Relation of planar Hall and planar Nernst effects in thin film permalloy

NASA Astrophysics Data System (ADS)

Wesenberg, D.; Hojem, A.; Bennet, R. K.; Zink, B. L.

2018-06-01

We present measurements of the planar Nernst effect (PNE) and the planar Hall effect (PHE) of nickel-iron (Ni–Fe) alloy thin films. We suspend the thin-film samples, measurement leads, and lithographically-defined heaters and thermometers on silicon-nitride membranes to greatly simplify control and measurement of thermal gradients essential to quantitative determination of magnetothermoelectric effects. Since these thermal isolation structures allow measurements of longitudinal thermopower, or the Seebeck coefficient, and four-wire electrical resistivity of the same thin film, we can quantitatively demonstrate the link between the longitudinal and transverse effects as a function of applied in-plane field and angle. Finite element thermal analysis of this essentially 2D structure allows more confident determination of the thermal gradient, which is reduced from the simplest assumptions due to the particular geometry of the membranes, which are more than 350 μm wide in order to maximize sensitivity to transverse thermoelectric effects. The resulting maximum values of the PNE and PHE coefficients for the Ni–Fe film with 80% Ni we study here are and , respectively. All signals are exclusively symmetry with applied field, ruling out long-distance spin transport effects. We also consider a Mott-like relation between the PNE and PHE, and use both this and the standard Mott relation to determine the energy-derivative of the resistivity at the Fermi energy to be , which is very similar to values for films we previously measured using similar thermal platforms. Finally, using an estimated value for the lead contribution to the longitudinal thermopower, we show that the anisotropic magnetoresistance (AMR) ratio in this Ni–Fe film is two times larger than the magnetothermopower ratio, which is the first evidence of a deviation from strict adherence to the Mott relation between Seebeck coefficient and resistivity.

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

PubMed Central

Wang, Qun; Jin, Xin

2018-01-01

We report the first results of functional properties of nitrogenized silver-permalloy thin films deposited on polyethylene terephthalic ester {PETE (C10H8O4)n} flexible substrates by magnetron sputtering. These new soft magnetic thin films have magnetization that is comparable to pure Ni81Fe19 permalloy films. Two target compositions (Ni76Fe19Ag5 and Ni72Fe18Ag10) were used to study the effect of compositional variation and sputtering parameters, including nitrogen flow rate on the phase evolution and surface properties. Aggregate flow rate and total pressure of Ar+N2 mixture was 60 sccm and 0.55 Pa, respectively. The distance between target and the substrate was kept at 100 mm, while using sputtering power from 100–130 W. Average film deposition rate was confirmed at around 2.05 nm/min for argon atmosphere and was reduced to 1.8 nm/min in reactive nitrogen atmosphere. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, vibrating sample magnetometer, and contact angle measurements were used to characterize the functional properties. Nano sized character of films was confirmed by XRD and SEM. It is found that the grain size was reduced by the formation of nitride phase, which in turns enhanced the magnetization and lowers the coercivity. Magnetic field coupling efficiency limit was determined from 1.6–2 GHz frequency limit. The results of comparable magnetic performance, lowest magnetic loss, and highest surface free energy, confirming that 15 sccm nitrogen flow rate at 115 W is optimal for producing Ag-doped permalloy flexible thin films having excellent magnetic field coupling efficiency. PMID:29562603

Structural and magnetic properties of epitaxial delafossite CuFeO2 thin films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Senty, Tess; Joshi, Toyanath; Trappen, Robbyn; Zhou, Jinling; Chen, Song; Ferrari, Piero; Borisov, Pavel; Song, Xueyan; Holcomb, Mikel; Bristow, Alan; Cabrera, Alejandro; Lederman, David

2015-03-01

Growth of pure phase delafossite CuFeO2 thin films on Al2O3 (00.1) substrates by pulsed laser deposition was systematically investigated as function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO2 films demonstrated a phase transition at TC = 15K, which agrees with the first antiferromagnetic transition at 14K in the bulk CuFeO2. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the Microelectronics Advanced Research Corporation (Contract #2013-MA-2382) at WVU. Work at PUC was supported by FONDECyT.

A Brillouin Light Scattering Study of Magnetic Excitations.

DTIC Science & Technology

1986-01-30

collaborative project with CNR-Rome, with materials emphasis on substi- tuted LPE garnet thin films . "Localized Canting Models for Substituted Magnetic Oxides...thermal magnons in FeBO 3, exchange in substituted ferrites, parametric spin-waves in epitaxial yttrium iron garnet (YIG. films , surface magnon angle...and surface magnons in thin films . Central to the research was the develooment of a hiqh contrast, high resolu- tion multipassltandem Fabry; Perot

Properties of Ferrite Garnet (Bi, Lu, Y)3(Fe, Ga)5O12 Thin Film Materials Prepared by RF Magnetron Sputtering

PubMed Central

Nur-E-Alam, Mohammad; Belotelov, Vladimir; Alameh, Kamal

2018-01-01

This work is devoted to physical vapor deposition synthesis, and characterisation of bismuth and lutetium-substituted ferrite-garnet thin-film materials for magneto-optic (MO) applications. The properties of garnet thin films sputtered using a target of nominal composition type Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 are studied. By measuring the optical transmission spectra at room temperature, the optical constants and the accurate film thicknesses can be evaluated using Swanepoel’s envelope method. The refractive index data are found to be matching very closely to these derived from Cauchy’s dispersion formula for the entire spectral range between 300 and 2500 nm. The optical absorption coefficient and the extinction coefficient data are studied for both the as-deposited and annealed garnet thin-film samples. A new approach is applied to accurately derive the optical constants data simultaneously with the physical layer thickness, using a combination approach employing custom-built spectrum-fitting software in conjunction with Swanepoel’s envelope method. MO properties, such as specific Faraday rotation, MO figure of merit and MO swing factor are also investigated for several annealed garnet-phase films. PMID:29789463

Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

The role of nickel addition and annealing temperature on ion storage performance of nanostructured nickel ferrite thin films

NASA Astrophysics Data System (ADS)

Bazhan, Z.; Ghodsi, F. E.; Mazloom, J.

2016-10-01

The sol-gel spin-coated nickel ferrite (NF), NiFe2O4, thin films were synthesised and the effect of annealing temperature and compositional ratio on different properties of samples were investigated. Electrochemical performance of the films was measured in the presence of KOH and LiClO4/PC electrolyte. Generally, addition of nickel increases the current density. The NF thin films with molar ratio of 0.5 and annealed at 400 °C have the highest charge density value and the highest capacitance in both electrolytes. Annealing temperature had significant effect on electrochemical properties of NF thin films and the diffusion coefficient enhanced by increasing the annealing temperature. X-ray diffraction patterns of prepared samples showed the rhombohedral structure, hematite phase (α-Fe2O3), of iron oxide sample and the presence of inverse spinel structure confirms the formation of NF. Field emission scanning electron microscopy images revealed that the morphology of films changes from larvae shape to granular structure by nickel incorporation and the grain size increased by raising the annealing temperature. The absorption edge of the hematite shift to higher wavelength by annealing and nickel incorporation and band gap narrowing has been occurred.

Phase Competition Induced Bio-Electrochemical Resistance and Bio-Compatibility Effect in Nanocrystalline Zr x -Cu100-x Thin Films.

PubMed

Badhirappan, Geetha Priyadarshini; Nallasivam, Vignesh; Varadarajan, Madhuri; Leobeemrao, Vasantha Priya; Bose, Sivakumar; Venugopal, Elakkiya; Rajendran, Selvakumar; Angleo, Peter Chrysologue

2018-07-01

Nano-crystalline Zrx-Cu100-x (x = 20-100 at.%) thin films with thickness ranging from 50 to 185 nm were deposited by magnetron co-sputtering with individual Zr and Cu targets. The as-sputtered thin films were characterized by Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Glancing Incidence X-ray Diffraction (GIXRD) for structural and morphological properties. The crystallite size was found to decrease from 57 nm to 37 nm upon increasing the Zr content from 20 to 30 at.% with slight increase in the lattice strain from 0.17 to 0.33%. Further, increase in Zr content to 40 at.% leads to increase in the crystallite size to 57 nm due to stabilization of C10Zr7 phase along with the presence of nanocrystalline Cu-Zr phase. A bimodal distribution of grain size was observed from FE-SEM micrograph was attributed to the highest surface roughness in Zr30Cu70 thin films comprised of Cu10Zr7, Cu9Zr2, Cu-Zr intermetallic phases. In-vitro electrochemical behaviors of nano-crystalline Zrx-Cu100-x thin films in simulated body fluid (SBF) were investigated using potentiodynamic polarization studies. Electrochemical impedance spectroscopy (EIS) data fitting by equivalent electrical circuit fit model suggests that inner bulk layer contributes to high bio-corrosion resistance in Zrx-Cu100-x thin films with increase in Zr content. The results of cyto-compatibility assay suggested that Zr-Cu thin film did not introduce cytotoxicity to osteoblast cells, indicating its suitability as a bio-coating for minimally invasive medical devices.

High-efficiency Thin-film Fe 2SiS 4 and Fe 2GeS 4-based Solar Cells Prepared from Low-Cost Solution Precursors. Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radu, Daniela Rodica; Liu, Mimi; Hwang, Po-yu

The project aimed to provide solar energy education to students from underrepresented groups and to develop a novel, nano-scale approach, in utilizing Fe 2SiS 4 and Fe 2GeS 4 materials as precursors to the absorber layer in photovoltaic thin-film devices. The objectives of the project were as follows: 1. Develop and implement one solar-related course at Delaware State University and train two graduate students in solar research. 2. Fabricate and characterize high-efficiency (larger than 7%) Fe 2SiS 4 and Fe 2GeS 4-based solar devices. The project has been successful in both the educational components, implementing the solar course at DSUmore » as well as in developing multiple routes to prepare the Fe 2GeS 4 with high purity and in large quantities. The project did not meet the efficiency objective, however, a functional solar device was demonstrated.« less

Vacuum and low oxygen pressure influence on BaFe12O19 film deposited by pulse laser deposition

NASA Astrophysics Data System (ADS)

Kumar, Pawan; Gaur, Anurag; Choudhary, R. J.

2018-05-01

BaFe12O19 hexaferrite thin films are deposited on Si (111) substrate by the pulse laser deposition (PLD) technique in high vacuum 10-6 Torr and low oxygen pressure (10 mTorr) at 650°C substrate temperature. The effects of high vacuum and low pressure on magnetic and optical properties are studied. These films are characterized by the x-ray diffractometer (XRD), SQUID-VSM magnetometer, and Photo-luminescence spectroscopy. XRD pattern reveals that the BaFe12O19 film well formed in both environments without any impurity pick. High magnetic saturazation 317 emu/cm3 and coercivity 130 Oe are observed for the film deposited in vacuum. Photoluminescence emission spectrum of BaFe12O19 film reveals that the higher intensity emission peak at ˜372 nm under the excitation wavelength of 270 nm is observed for the film grown in vacuum.

The effect of Cr substitution on the structural, electronic and magnetic properties of pulsed laser deposited NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Panwar, Kalpana; Tiwari, Shailja; Bapna, Komal; Heda, N. L.; Choudhary, R. J.; Phase, D. M.; Ahuja, B. L.

2017-01-01

We have studied the structural, electronic and magnetic properties of pulsed laser deposited thin films of Ni1-xCrxFe2O4 (x=0.02 and 0.05) on Si (111) and Si (100) substrates. The films reveal single phase, polycrystalline structure with larger grain size on Si (111) substrate than that on Si (100) substrate. Contrary to the expected inverse spinel structure, x-ray photoemission (XPS) studies reveal the mixed spinel structure. XPS results suggest that Ni and Fe ions exist in 2+ and 3+ states, respectively, and they exist in tetrahedral as well as octahedral sites. The deviation from the inverse spinel leads to modified magnetic properties. It is observed that saturation magnetization drastically drops compared to the expected saturation value for inverse spinel structure. Strain in the films and lattice distortion produced by the Cr doping also appear to influence the magnetic properties.

Strain Coupling of Conversion-type Fe 3O 4 Thin Films for Lithium Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hwang, Sooyeon; Meng, Qingping; Chen, Ping-Fan

2017-05-29

Lithiation/delithiation induces significant stresses and strains into the electrodes for lithium ion batteries, which can severely degrade their cycling performance. Moreover, this electrochemically induced strain can interact with the local strain existing at solid–solid interfaces. It is not clear how this interaction affects the lithiation mechanism. The effect of this coupling on the lithiation kinetics in epitaxial Fe 3O 4 thin film on a Nb-doped SrTiO 3 substrate is investigated. In-situ and ex-situ transmission electron microscopy (TEM) results show that the lithiation is suppressed by the compressive interfacial strain. At the interface between the film and substrate, the existence ofmore » Li xFe 3O 4 rock-salt phase during lithiation consequently restrains the film from delamination. 2D phase-field simulation verifies the effect of strain. This work provides critical insights of understanding the solid–solid interfaces of conversion-type electrodes.« less

Fe-Al alloy single-crystal thin film preparation for basic magnetic measurements

NASA Astrophysics Data System (ADS)

Abe, Tatsuya; Kawai, Tetsuroh; Futamoto, Masaaki; Ohtake, Mitsuru; Inaba, Nobuyuki

2018-04-01

Fe100-xAlx (x = 0, 4, 10, 20, 30 at. %) alloy films of 40 nm thickness are prepared on MgO(001) single-crystal substrates by varying substrate temperature from room temperature to 600 °C. Single-crystal films of (001) orientation with bcc-based disordered A2 structure are obtained for the Al content range of x = 0 - 20 at. %. An ordered phase of DO3 structure is observed in Fe70Al30 films prepared at temperatures higher than 200 °C, whereas (001) oriented single-crystal films of A2 structure are obtained when prepared at room temperature. The film surface profile does not depend much on the film composition, while the surface roughness increases with increasing substrate temperature. Island-like crystals are observed for films prepared at 600°C for all compositions. Difference in lattice spacing measured parallel and perpendicular to the substrate is noted for the single-crystal thin films and it increases with increasing Al content. The lattice strain in single-crystal film is caused possibly to accommodate the lattice mismatch with the MgO substrate. The (001)-oriented single-crystal films with A2 structure show four-fold symmetries in in-plane magnetic anisotropy with the easy magnetization axis A2[100] and the hard magnetization axis A2[110], whereas the films with DO3 ordered structure show almost isotropic magnetic properties.

Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

NASA Astrophysics Data System (ADS)

Klug, Jeffrey A.

The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to measure the polar displacement of the Ba cations in a 50 nm thick coherently strained BaTiO3 film on DyScO3 (110). An analysis assuming a bulk-like ratio between the Ti and Ba displacements found that the polar shift of Ba cations was larger than in bulk BaTiO3, which was consistent with strain-induced enhancement of ferroelectric polarization in BaTiO3/DyScO3 (110).

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method

PubMed Central

2012-01-01

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2. PMID:22221519

Enhanced photoelectrochemical performance of Ti-doped hematite thin films prepared by the sol-gel method

NASA Astrophysics Data System (ADS)

Lian, Xiaojuan; Yang, Xin; Liu, Shangjun; Xu, Ying; Jiang, Chunping; Chen, Jinwei; Wang, Ruilin

2012-01-01

Ti-doped α-Fe2O3 thin films were successfully prepared on FTO substrates by the sol-gel route. Hematite film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS). The XRD data showed α-Fe2O3 had a preferred (1 1 0) orientation which belonged to the rhombohedral system. Interestingly, the grains turned into worm-like shape after annealed at high temperature. The IPCE could reach 32.6% at 400 nm without any additional potential vs. SCE. Titanium in the lattice can affect the photo electro chemical performance positively by increasing the conductivity of the thin film. So the excited electrons and holes could live longer, rather than recombining with each other rapidly as undoped hematite. And the efficient carrier density on the Ti-doped anode surface was higher than the undoped anode, which contribute to the well PEC performance.

Effect of RF power density on micro- and macro-structural properties of PECVD grown hydrogenated nanocrystalline silicon thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gokdogan, Gozde Kahriman, E-mail: gozdekahriman@gmail.com; Anutgan, Tamila, E-mail: tamilaanutgan@karabuk.edu.tr

2016-03-25

This contribution provides the comparison between micro- and macro-structure of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by plasma enhanced chemical vapor deposition (PECVD) technique under different RF power densities (P{sub RF}: 100−444 mW/cm{sup 2}). Micro-structure is assessed through grazing angle X-ray diffraction (GAXRD), while macro-structure is followed by surface and cross-sectional morphology via field emission scanning electron microscopy (FE-SEM). The nanocrystallite size (∼5 nm) and FE-SEM surface conglomerate size (∼40 nm) decreases with increasing P{sub RF}, crystalline volume fraction reaches maximum at 162 mW/cm{sup 2}, FE-SEM cross-sectional structure is columnar except for the film grown at 162 mW/cm{sup 2}. The dependence of previously determinedmore » ‘oxygen content–refractive index’ correlation on obtained macro-structure is investigated. Also, the effect of P{sub RF} is discussed in the light of plasma parameters during film deposition process and nc-Si:H film growth models.« less

Artificial multiferroic structures using soft magnetostrictive bilayers on Pb(Mg1/3Nb2/3)-PbTiO3

NASA Astrophysics Data System (ADS)

Miskevich, E.; Alshammari, F. K.; Yang, W.-G.; Sharp, J.; Baco, S.; Leong, Z.; Abbas, Q. A.; Morley, N. A.

2018-02-01

Artificial multiferroic structures are of great interest as they combine two or more functionalities together. One example of these structures is magnetostrictive films grown on top of piezoelectric substrates; allowing the magnetisation hysteresis loop of the magnetostrictive film to be manipulated using an electric field across the structure rather than a magnetic field. In this paper, we have studied the multiferroic structure NiFe/FeCo/Ti/Pb(Mg1/3Nb2/3)-PbTiO3 (PMN-PT) as a function of the electric and magnetic field. Soft magnetostrictive bilayer films (NiFe/FeCo) are studied, as often applications require soft magnetic properties (small coercive and anisotropy fields) combined with larger magnetostrictive constants. Unfortunately, FeCo films can have coercive fields that are too large, while NiFe films’ magnetostriction constants are almost zero; thus, combining the two together should produce the ‘ideal’ soft magnetostrictive film. It was found that the addition of a thin NiFe film onto the FeCo film reduced the coercive field and remnant magnetisation on the application of an applied voltage in comparison to just the FeCo film. It was also determined that for the NiFe/FeCo bilayer the magnetisation switchability was ~100% on the application of 8 kV cm-m, which was higher than the monolayer FeCo films at the same applied field, demonstrating improvement of the multiferroic behaviour by the soft magnetic/magnetostrictive bilayer.

Influence of film thickness on topology and related magnetic interactions in Fe nanoparticle films

NASA Astrophysics Data System (ADS)

Ausanio, G.; Iannotti, V.; Amoruso, S.; Bruzzese, R.; Wang, X.; Aruta, C.; Arzeo, M.; Lanotte, L.

2013-08-01

Fe nanoparticle (NP)-assembled thin films with different thickness were prepared by femtosecond-pulsed laser deposition using different deposition times. The proper selection of the deposition time allows to control, to a certain degree, the morphology and topology of the deposited Fe nanoparticles (NPs) assembly, fostering non-uniform dense assemblies of NPs, with the consequent reduction of the influence of the exchange interactions on the macroscopic magnetic properties with decreasing thickness. The magnetic behavior of the Fe NP-assembled films with decreasing thickness is characterized by higher coercive field ( H c) values (a factor ≈4.5) and a good compromise between the hysteresis loops squareness and moderate exchange interactions, strongly correlated with the NPs topology.

Field dependent magnetic anisotropy of Ga0.2Fe0.8 thin films

NASA Astrophysics Data System (ADS)

Resnick, Damon A.; McClure, A.; Kuster, C. M.; Rugheimer, P.; Idzerda, Y. U.

2011-04-01

Using longitudinal MOKE in combination with a variable strength rotating magnetic field, called the rotational MOKE (ROTMOKE) method, we show that the magnetic anisotropy for a Ga0.2Fe0.8 single crystal film with a thickness of 17 nm, grown on GaAs (001) with a thick ZnSe buffer layer, depends linearly on the strength of the applied magnetic field. The torque moment curves generated using ROTMOKE are well fit with a model that accounts for the uniaxial, cubic, or fourfold anisotropy, as well as additional terms with a linear dependence on the applied magnetic field. The uniaxial and cubic anisotropy fields, taken from both the hard and the easy axis scans, are seen to remain field independent. The field dependent terms are evidence of a large affect of the magnetostriction and its contribution to the effective magnetic anisotropy in GaxFe1-x thin films.

Ferroelectric and structural properties of stress-constrained and stress-relaxed polycrystalline BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Nakashima, Seiji; Ricinschi, Dan; Park, Jung Min; Kanashima, Takeshi; Fujisawa, Hironori; Shimizu, Masaru; Okuyama, Masanori

2009-03-01

The stress influence of the structural and ferroelectric properties of polycrystalline BiFeO3 (BFO) thin films has been investigated using a membrane substrate for relaxing stress. Reciprocal space mapping (RSM) measurement has been performed to confirm the stress dependence of the crystal structure of polycrystalline BFO thin films on the Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (625 μm) substrate (stress-constrained BFO film) and the Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (15 μm) membrane substrate (stress-relaxed BFO film). The BFO thin films prepared by pulsed laser deposition were polycrystalline and mainly exhibit a texture with (001) and (110) plane orientations. From the RSM results, the crystal structure of the (001)-oriented domain changes from Pm monoclinic to Cm monoclinic or to R3c rhombohedral due to stress relaxation. Moreover, at room temperature as well as at 150 K, remanent polarization (Pr) increases and double coercive field (2Ec) decreases (in the latter case from 88 to 94 μC/cm2 and from 532 to 457 kV/cm, respectively) due to relaxing stress. The enhancement of ferroelectricity is attributed to the crystal structural deformation and/or transition and angle change between the polarization direction and film plane.

Synthesis and characterization of structural, morphological and photosensor properties of Cu0.1Zn0.9S thin film prepared by a facile chemical method

NASA Astrophysics Data System (ADS)

Gubari, Ghamdan M. M.; Ibrahim Mohammed S., M.; Huse, Nanasaheb P.; Dive, Avinash S.; Sharma, Ramphal

2018-05-01

The Cu0.1Zn0.9S thin film was grown by facile chemical bath deposition (CBD) method on glass substrates at 60°C. The structural, morphological, photosensor properties of the as-grown thin film has been investigated. The structural and phase confirmation of the as-grown thin film was carried out by X-ray diffraction (XRD) technique and Raman spectroscopy. The FE-SEM images showed that the thin films are well covered with material on an entire glass substrate. From the optical absorption spectrum, the direct band gap energy for the Cu0.1Zn0.9S thin film was found to be ˜3.16 eV at room temperature. The electrical properties were measured at room temperature in the voltage range ±2.5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ˜72 % for 260 W.

Broadband complex permeability characterization of magnetic thin films using shorted microstrip transmission-line perturbation

NASA Astrophysics Data System (ADS)

Liu, Yan; Chen, Linfeng; Tan, C. Y.; Liu, H. J.; Ong, C. K.

2005-06-01

A brief review of the methods used for broadband complex permeability measurement of magnetic thin films up to microwave frequencies is given. In particular, the working principles of the transmission-line perturbation methods for the characterization of magnetic thin films are discussed, with emphasis on short-circuited planar transmission-line perturbation methods. The algorithms for calculating the complex permeability of magnetic thin films for short-circuited planar transmission-line perturbation methods are analyzed. A shorted microstrip line is designed and fabricated as a prototype measurement fixture. The structure of the microstrip fixture and the corresponding measurement procedure are discussed in detail. A piece of 340 nm thick FeTaN thin film deposited on Si substrate using sputtering method is characterized using the microstrip fixture. An improved technique for obtaining permeability by using a saturation magnetization field is demonstrated here, and the results fit well with the Landau-Lifchitz-Gilbert theory. Approaches to extending this method to other aspects in the investigation of magnetic thin film are also discussed.

The Organism/Organic Exposure to Orbital Stresses (O/OREOS) satellite: radiation exposure in low-earth orbit and supporting laboratory studies of iron tetraphenylporphyrin chloride.

PubMed

Cook, Amanda M; Mattioda, Andrew L; Ricco, Antonio J; Quinn, Richard C; Elsaesser, Andreas; Ehrenfreund, Pascale; Ricca, Alessandra; Jones, Nykola C; Hoffmann, Søren V

2014-02-01

We report results from the exposure of the metalloporphyrin iron tetraphenylporphyrin chloride (FeTPPCl) to the outer space environment, measured in situ aboard the Organism/Organic Exposure to Orbital Stresses nanosatellite. FeTPPCl was exposed for a period of 17 months (3700 h of direct solar exposure), which included broad-spectrum solar radiation (∼122 nm to the near infrared). Motivated by the potential role of metalloporphyrins as molecular biomarkers, the exposure of thin-film samples of FeTPPCl to the space environment in low-Earth orbit was monitored in situ via ultraviolet/visible spectroscopy and reported telemetrically. The space data were complemented by laboratory exposure experiments that used a high-fidelity solar simulator covering the spectral range of the spaceflight measurements. We found that thin-film samples of FeTPPCl that were in contact with a humid headspace gas (0.8-2.3% relative humidity) were particularly susceptible to destruction upon irradiation, degrading up to 10 times faster than identical thin films in contact with dry headspace gases; this degradation may also be related to the presence of oxides of nitrogen in those cells. In the companion terrestrial experiments, simulated solar exposure of FeTPPCl films in contact with either Ar or CO2:O2:Ar (10:0.01:1000) headspace gas resulted in growth of a band in the films' infrared spectra at 1961 cm(-1). We concluded that the most likely carriers of this band are allene (C3H4) and chloropropadiene (C3H3Cl), putative molecular fragments of the destruction of the porphyrin ring. The thin films studied in space and in solar simulator-based experiments show qualitatively similar spectral evolution as a function of contacting gaseous species but display significant differences in the time dependence of those changes. The relevance of our findings to planetary science, biomarker research, and the photostability of organic materials in astrobiologically relevant environments is discussed.

Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

NASA Astrophysics Data System (ADS)

Kim, E. J.; Kim, K. A.; Yoon, S. M.

2016-02-01

Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses.

Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2017-11-01

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

Growth and surface modification of LaFeO3 thin films induced by reductive annealing

NASA Astrophysics Data System (ADS)

Flynn, Brendan T.; Zhang, Kelvin H. L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

2015-03-01

The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications.

Optical, wetting and electrical properties of functionalized fulleropyrrolidine thin films

NASA Astrophysics Data System (ADS)

Abdulrazack, Parveen; Venkatesan, Sughanya; Chellasamy, Manoharan; Samuthira, Nagarajan

2017-12-01

Fulleropyrrolidine derivatives acts as an electron acceptor in the fabrication of solar cells and other optoelectronic devices. In this investigation thin film of functionalized fulleropyrrolidines were fabricated and studied their photo-physical properties. Surface morphology of the thin films was investigated through AFM and FE-SEM. The results suggested that large dependence on structure vs molecular packing. The long alkyl chain substituted C60 were assembled in the form of nanorods. C60- C60 intermolecular distance were measured, the films were with good absorption and exhibits n-type semiconducting behavior. The films were having high contact angle and can be effectively used for fabricating semiconducting devices with self- cleaning property.

The Electrochemical Properties of Sr(Ti,Fe)O 3-δ for Anodes in Solid Oxide Fuel Cells

DOE PAGES

Nenning, Andreas; Volgger, Lukas; Miller, Elizabeth; ...

2017-02-18

Reduction-stable mixed ionic and electronic conductors such as Sr(Ti,Fe)O 3-δ (STF) are promising materials for application in anodes of solid oxide fuel cells. The defect chemistry of STF and its properties as solid oxide fuel cell (SOFC) cathode have been studied thoroughly, while mechanistic investigations of its electrochemical properties as SOFC anode material are still scarce. In this study, thin film model electrodes of STF with 30% and 70% Fe content were investigated in H 2+H 2O atmosphere by electrochemical impedance spectroscopy. Lithographically patterned thin film Pt current collectors were applied on top or beneath the STF thin films tomore » compensate for the low electronic conductivity under reducing conditions. Oxygen exchange resistances, electronic and ionic conductivities and chemical capacitances were quantified and discussed in a defect chemical model. Increasing Fe content increases the electro-catalytic activity of the STF surface as well as the electronic and ionic conductivity. Current collectors on top also increase the electrochemical activity due to a highly active Pt-atmosphere-STF triple phase boundary. Furthermore, the electrochemical activity depends decisively on the H 2:H 2O mixing ratio and the polarization. Lastly, Fe 0 nanoparticles may evolve on the surface in hydrogen rich atmospheres and increase the hydrogen adsorption rate.« less

Enhancing electrical conductivity of room temperature deposited Sn-doped In2O3 thin films by hematite seed layers

NASA Astrophysics Data System (ADS)

Lohaus, Christian; Steinert, Céline; Deyu, Getnet; Brötz, Joachim; Jaegermann, Wolfram; Klein, Andreas

2018-04-01

Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up to σ = 3300 S/cm are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

NASA Astrophysics Data System (ADS)

Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

2017-08-01

Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

Photoinduced Demagnetization and Insulator-to-Metal Transition in Ferromagnetic Insulating BaFeO_{3} Thin Films.

PubMed

Tsuyama, T; Chakraverty, S; Macke, S; Pontius, N; Schüßler-Langeheine, C; Hwang, H Y; Tokura, Y; Wadati, H

2016-06-24

We studied the electronic and magnetic dynamics of ferromagnetic insulating BaFeO_{3} thin films by using pump-probe time-resolved resonant x-ray reflectivity at the Fe 2p edge. By changing the excitation density, we found two distinctly different types of demagnetization with a clear threshold behavior. We assigned the demagnetization change from slow (∼150  ps) to fast (<70  ps) to a transition into a metallic state induced by laser excitation. These results provide a novel approach for locally tuning magnetic dynamics. In analogy to heat-assisted magnetic recording, metallization can locally tune the susceptibility for magnetic manipulation, allowing one to spatially encode magnetic information.

Fabrication of flexible oriented magnetic thin films with large in-plane uniaxial anisotropy by roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Thantirige, Rukshan M.; John, Jacob; Pradhan, Nihar R.; Carter, Kenneth R.; Tuominen, Mark T.

2016-06-01

Here, we report wafer scale fabrication of densely packed Fe nanostripe-based magnetic thin films on a flexible substrate and their magnetic anisotropy properties. We find that Fe nanostripes exhibit large in-plane uniaxial anisotropy and nearly square hysteresis loops with energy products (BHmax) exceeding 3 MGOe at room temperature. High density Fe nanostripes were fabricated on 70 nm flexible polyethylene terephthalate (PET) gratings, which were made by a roll-to-roll (R2R) UV nanoimprint lithography technique. We observed large in-plane uniaxial anisotropies along the long dimension of nanostripes that can be attributed to the shape. Temperature dependent hysteresis measurements confirm that the magnetization reversal is driven by non-coherent rotation reversal processes.

Synthesis of BiFeO{sub 3} thin films on single-terminated Nb : SrTiO{sub 3} (111) substrates by intermittent microwave assisted hydrothermal method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velasco-Davalos, Ivan; Ambriz-Vargas, Fabian; Kolhatkar, Gitanjali

We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO{sub 3} (111) substrates and the deposition of ferroelectric BiFeO{sub 3} thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO{sub 3}){sup 4−} or Ti{sup 4+} layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d{sub 111}) and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO{sub 3} single crystal substrates. Multiferroic BiFeO{sub 3} thinmore » films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO{sub 3} (111) substrates. Bi(NO{sub 3}){sub 3} and Fe(NO{sub 3}){sub 3} along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO{sub 3} films on Nb : SrTiO{sub 3} (100) substrates was verified by piezoresponse force microscopy.« less

Unusually high critical current of clean P-doped BaFe2As2 single crystalline thin film

NASA Astrophysics Data System (ADS)

Kurth, F.; Tarantini, C.; Grinenko, V.; Hänisch, J.; Jaroszynski, J.; Reich, E.; Mori, Y.; Sakagami, A.; Kawaguchi, T.; Engelmann, J.; Schultz, L.; Holzapfel, B.; Ikuta, H.; Hühne, R.; Iida, K.

2015-02-01

Microstructurally clean, isovalently P-doped BaFe2As2 (Ba-122) single crystalline thin films have been prepared on MgO (001) substrates by molecular beam epitaxy. These films show a superconducting transition temperature (Tc) of over 30 K although P content is around 0.22, which is lower than the optimal one for single crystals (i.e., 0.33). The enhanced Tc at this doping level is attributed to the in-plane tensile strain. The strained film shows high transport self-field critical current densities (Jc) of over 6 MA/cm2 at 4.2 K, which are among the highest for Fe based superconductors (FeSCs). In-field Jc exceeds 0.1 MA/cm2 at μ 0 H = 35 T for H ‖ a b and μ 0 H = 18 T for H ‖ c at 4.2 K, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar Tc. Structural investigations reveal no defects or misoriented grains pointing to strong pinning centers. We relate this unexpected high Jc to a strong enhancement of the vortex core energy at optimal Tc, driven by in-plane strain and doping. These unusually high Jc make P-doped Ba-122 very favorable for high-field magnet applications.

Additive patterning of ion-beam-sputtered non-conformal Ni80Fe20 and Co70Fe30 magnetic films

NASA Astrophysics Data System (ADS)

Redondo, C.; Moralejo, S.; Castaño, F.; Lee, W.; Nielsch, K.; Ross, C. A.; Castaño, F. J.

2006-04-01

Additive patterning processes of magnetic films grown using an ion-beam sputter (IBS) system designed to produce non-conformal films are described. The effects of the ion-gun beam current and Ar pressure on the sputtering rates and roughness of Ni80Fe20 and Co70Fe30 magnetic thin films are investigated using atomic-force microscopy (AFM) and the films' magnetic properties are measured using spatially resolved magneto-optical magnetometry. By tailoring the plasma solid angle, non-conformal film growth allows for simple additive patterning down to lateral dimensions ranging from a few microns to the deep-submicron regime, using templates defined by photolithography or electron-beam lithography, and shadow masks created using templated self-assembly. The magnetization reversal exhibited by patterned sub-200 nm nanodisc arrays with different lateral edge-roughness will be discussed.

Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors

NASA Astrophysics Data System (ADS)

Lee, Sunghwan; Song, Yang; Park, Hongsik; Zaslavsky, A.; Paine, D. C.

2017-09-01

Amorphous oxide semiconductors (AOSs) based on indium oxides are of great interest for next generation ultra-high definition displays that require much smaller pixel driving elements. We describe the scaling behavior in amorphous InZnO thin film transistors (TFTs) with a significant decrease in the extracted field-effect mobility μFE with channel length L (from 39.3 to 9.9 cm2/V·s as L is reduced from 50 to 5 μm). Transmission line model measurements reveal that channel scaling leads to a significant μFE underestimation due to contact resistance (RC) at the metallization/channel interface. Therefore, we suggest a method of extracting correct μFE when the TFT performance is significantly affected by RC. The corrected μFE values are higher (45.4 cm2/V·s) and nearly independent of L. The results show the critical effect of contact resistance on μFE measurements and suggest strategies to determine accurate μFE when a TFT channel is scaled.

Nanotube Film Electrode and an Electroactive Device Fabricated with the Nanotube Film Electrode and Methods for Making Same

NASA Technical Reports Server (NTRS)

Kang, Jin Ho (Inventor); Harrison, Joycelyn S. (Inventor); Park, Cheol (Inventor)

2017-01-01

Disclosed is a single wall carbon nanotube (SWCNT) film electrode (FE), all-organic electroactive device systems fabricated with the SWNT-FE, and methods for making same. The SWCNT can be replaced by other types of nanotubes. The SWCNT film can be obtained by filtering SWCNT solution onto the surface of an anodized alumina membrane. A freestanding flexible SWCNT film can be collected by breaking up this brittle membrane. The conductivity of this SWCNT film can advantageously be higher than 280 S/cm. An electroactive polymer (EAP) actuator layered with the SWNT-FE shows a higher electric field-induced strain than an EAP layered with metal electrodes because the flexible SWNT-FE relieves the restraint of the displacement of the polymeric active layer as compared to the metal electrode. In addition, if thin enough, the SWNT-FE is transparent in the visible light range, thus making it suitable for use in actuators used in optical devices.

Preparation and characterization of nanostructured Pt/TiO2 thin films treated using electron beam.

PubMed

Shin, Joong-Hyeok; Woo, Hee-Gweon; Kim, Bo-Hye; Lee, Byung Cheol; Jun, Jin

2010-05-01

Pt nanoparticle-doped titanium dioxide (Pt/TiO2) thin films were prepared on a silicon wafer substrate by sol-gel spin coating process. The prepared thin films were treated with electron beam (EB at 1.1 MeV, 100, 200, 300 kGy) at air atmosphere. The effect of EB-irradiation on the composition of the treated thin films, optical properties and morphology of thin films were investigated by various analytical techniques such as X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The crystal structure of the TiO2 layer was found to be an anatase phase and the size of TiO2 particles was determined to be about 13 nm. Pt nanoparticles with diameter of 5 nm were observed on surface of the films. A new layer (presumed to be Pt-Ti complex and/or PtO2 compound) was created in the Pt/TiO2 thin film treated with EB (300 kGy). The transmittance of thin film decreased with EB treatment whereas the refractive index increased.

BiFeO3 epitaxial thin films and devices: past, present and future

NASA Astrophysics Data System (ADS)

Sando, D.; Barthélémy, A.; Bibes, M.

2014-11-01

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

NASA Astrophysics Data System (ADS)

Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

2011-07-01

We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

Tuning the Magnetic and Electronic Properties of Iron(x )Silicon(1-x) Thin Films for Spintronics

NASA Astrophysics Data System (ADS)

Karel, Julie Elizabeth

This dissertation investigated the magnetic and electronic properties of a potentially better alternative: off-stoichimetry, bcc-like FexSi 1-x thin films (0.43800 K) and theoretically predicted high spin polarization (100%). However, little work has been done on off-stoichiometry FexSi1-x thin films (0.43

Understanding strain-induced phase transformations in BiFeO 3 thin films

DOE PAGES

Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M.; ...

2015-05-01

Bismuth ferrite (BiFeO 3) is a promising lead free multiferroic with large polarization, ferroelectricity and robust antiferomagnetism. Experiments demonstrate that epitaxial strain substantially enhance the piezoelectric response of BiFeO 3 thin films. Here, through a synergestic combination of theory and experiments, we characterize the co-existing polymorphs (specifically an intermediate S' phase between the bulk rhombohedral-R and the pseudotetragonal T' phases) observed in strained BiFeO 3 thin films. We show that the S' phase, although energetically very close to the T' phase, exhibits structural similarities with the bulk R phase. G-type antiferromagnetic ordering is predicted for the S' and R phases,more » whereas, the G/C-type antiferromagnetic order types are energetically indistinguishable for the T' phase. Furthermore, we predict a blue-shift in the band gap Eg when moving from R to S' to T', which we confirm by Electron Energy Loss Spectroscopy measurements. The flat energy landscape and the absence of an energy barrier between the T and S' phases indicate that a reversible phase transformation between the two is possible under the application of an external electric field. This may make it possible to strain engineer the electromechanical response or, utilizing the corresponding changes in Eg, create unique photonic structures.« less

Tuning of the magnetization dynamics in as-sputtered FeCoSiN thin films by various sputtering gas pressures

NASA Astrophysics Data System (ADS)

Xu, Feng; Phuoc, N. N.; Zhang, Xiaoyu; Ma, Yungui; Chen, Xin; Ong, C. K.

2008-11-01

In this work, we investigate the influence of various sputtering gas pressures on the high-frequency magnetization dynamics in as-sputtered FeCoSiN granular thin films. The permeability spectra are measured with the shorted microstrip transmission-line perturbation method and analyzed with the Landau-Lifshitz-Gilbert equation. The dependence of the effective damping coefficient on the external fields is fitted with a power law. The measurement and fitting results show that both the effective and the intrinsic damping coefficients in the magnetization dynamics can be conveniently and effectively tuned by changing the sputtering gas pressure. The physical origin of the influences is suggested to be related to the stress in the films.

Some magnetic and magnetoresistive properties of RF-sputtered thin NiFe-Si films.

NASA Astrophysics Data System (ADS)

Vatskicheva, M.; Vatskichev, Ly.; Dimitrov, I.; Kunev, B.

The galvanomagnetic properties and some structural peculiarities of rf-sputtered alloy films (NI80Fe20)100-xSix at 0 < x < 30 at. % were studied and compared with the corresponding properties of evaporated films of the same thickness and composition. The content of silicon increased with the increasing of the velocity of deposition and led to the amorphousation of the films. Coercivity decreased with the velocity of growth but it did not depend on the thickness and on the velocity of film deposition. The magnetoresistance ratio Dr/r of the sputtered films was about three times higher then that of the evaporated films.

Ab initio understanding of magnetic properties in Zn2+ substitution of Fe3O4 ultra-thin film with dilute Zn substitution

NASA Astrophysics Data System (ADS)

Huang, Zhaocong; Chen, Qian; Jiang, Sheng; Dong, Shuai; Zhai, Ya

2018-05-01

The mechanism of the magnetic properties on the Zn2+ substituted Fe3O4 film have been investigated based on first principle calculations. It is found that the surface effect plays an important role in the occupation of Zn ion, and in turn changes the magnetic moment. It may also destroy the half metallic behavior of Fe3O4 film even if the Zn2+ concentration only is one Zn2+ per unit cell (4%), which is different from that in bulk material.

Magnetic anisotropy engineering: Single-crystalline Fe films on ion eroded ripple surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liedke, M. O.; Koerner, M.; Lenz, K.

We present a method to preselect the direction of an induced in-plane uniaxial magnetic anisotropy (UMA) in thin single-crystalline Fe films on MgO(001). Ion beam irradiation is used to modulate the MgO(001) surface with periodic ripples on the nanoscale. The ripple direction determines the orientation of the UMA, whereas the intrinsic cubic anisotropy of the Fe film is not affected. Thus, it is possible to superimpose an in-plane UMA with a precision of a few degrees - a level of control not reported so far that can be relevant for example in spintronics.

Electrostatic spray deposition of porous Fe 2O 3 thin films as anode material with improved electrochemical performance for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Wang, L.; Xu, H. W.; Chen, P. C.; Zhang, D. W.; Ding, C. X.; Chen, C. H.

Iron oxide materials are attractive anode materials for lithium-ion batteries for their high capacity and low cost compared with graphite and most of other transition metal oxides. Porous carbon-free α-Fe 2O 3 films with two types of pore size distribution were prepared by electrostatic spray deposition, and they were characterized by X-ray diffraction, scanning electron microscopy and X-ray absorption near-edge spectroscopy. The 200 °C-deposited thin film exhibits a high reversible capacity of up to 1080 mAh g -1, while the initial capacity loss is at a remarkable low level (19.8%). Besides, the energy efficiency and energy specific average potential (E av) of the Fe 2O 3 films during charge/discharge process were also investigated. The results indicate that the porous α-Fe 2O 3 films have significantly higher energy density than Li 4Ti 5O 12 while it has a similar E av of about 1.5 V. Due to the porous structure that can buffer the volume changes during lithium intercalation/de-intercalation, the films exhibit stable cycling performance. As a potential anode material for high performance lithium-ion batteries that can be applied on electric vehicle and energy storage, rate capability and electrochemical performance under high-low temperatures were also investigated.

A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

NASA Technical Reports Server (NTRS)

Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

2001-01-01

A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

NASA Technical Reports Server (NTRS)

Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor); Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor)

2004-01-01

A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM Applications

NASA Astrophysics Data System (ADS)

Huang, Efrem Yuan-Fu

The objective of the research conducted herein was to develop L10-ordered materials and thin film stack structures with high perpendicular magnetic anisotropy (PMA) for spin-transfertorque magnetoresistive random access memory (STT-MRAM) applications. A systematic approach was taken in this dissertation, culminating in exchange coupled L1 0-FePt and L10- MnAl heterogeneous structures showing great promise for developing perpendicular magnetic tunnel junctions (pMTJs) with both high thermal stability and low critical switching current. First, using MgO underlayers on Si substrates, sputtered MnAl films were systematically optimized, ultimately producing a Si substrate/MgO (20 nm)/MnAl (30)/Ta (5) film stack with a high degree of ordering and large PMA. Next, noting the incompatibility of insulating MgO underlayers with industrial-scale CMOS processes, attention was turned to using conductive underlayers. TiN was found to excel at promoting growth of L10-MnAl, with optimized films showing improved magnetic properties over those fabricated on MgO underlayers. The use of different post-annealing processes was then studied as an alternative to in situ annealing. Rapid thermal annealing (RTA) was found to produce PMA in films at lower annealing temperatures than tube furnace annealing, but tube furnace annealing produced films with higher maximum PMA than RTA. While annealed samples had lower surface roughness than those ordered by high in situ deposition temperatures, relying solely on annealing to achieve L10-ordering resulted drastically reduced PMA. Finally, heterogeneous L10-ordered FePt/MgO/MnAl film stacks were explored for pMTJs. Film stacks with MgO barrier layers thinner than 2 nm showed significant interdiffusion between the FePt and MnAl, while film stacks with thicker MgO barrier layers exhibited good ordering and high PMA in both the FePt and MnAl films. It is believed that this limitation is caused by the roughness of the underlying FePt, which was thicker than 2 nm. Unfortunately, MgO barrier layers thinner than 2 nm are needed to make good MTJs. With further study, thin, continuous barriers may be achievable for high-PMA, L10- ordered materials with more materials exploration, deposition optimization, and more advanced thin film processing techniques and fabrication equipment. Use of appropriate underlayers, capping layers, dopant elements, and improved fabrication techniques may help reduce surface roughness while preserving PMA. If smooth electrodes can be developed, the heterogeneous structures discussed have great potential in taking advantage of exchange coupling for developing pMTJs with both high thermal stability and low critical switching current. (Abstract shortened by ProQuest.).

The induction of nanographitic phase on Fe coated diamond films for the enhancement in electron field emission properties

NASA Astrophysics Data System (ADS)

Panda, Kalpataru; Sundaravel, B.; Panigrahi, B. K.; Chen, H.-C.; Huang, P.-C.; Shih, W.-C.; Lo, S.-C.; Lin, L.-J.; Lee, C.-Y.; Lin, I.-N.

2013-03-01

A thin layer of iron coating and subsequent post-annealing (Fe-coating/post-annealing) is seen to significantly enhance the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films. The best EFE properties, with a turn on field (E0) of 1.98 V/μm and current density (Je) of 705 μA/cm2 at 7.5 V/μm, are obtained for the films, which were Fe-coated/post-annealed at 900 °C in H2 atmosphere. The mechanism behind the enhanced EFE properties of Fe coated/post-annealed UNCD films are explained by the microstructural analysis which shows formation of nanographitic phase surrounding the Fe (or Fe3C) nanoparticles. The role of the nanographitic phase in improving the emission sites of Fe coated/post-annealed UNCD films is clearly revealed by the current imaging tunneling spectroscopy (CITS) images. The CITS images clearly show significant increase in emission sites in Fe-coated/post-annealed UNCD films than the as-deposited one. Enhanced emission sites are mostly seen around the boundaries of the Fe (or Fe3C) nanoparticles which were formed due to the Fe-coating/post-annealing processes. Moreover, the Fe-coating/post-annealing processes enhance the EFE properties of UNCD films more than that on the microcrystalline diamond films. The authentic factor, resulting in such a phenomenon, is attributed to the unique granular structure of the UNCD films. The nano-sized and uniformly distributed grains of UNCD films, resulted in markedly smaller and densely populated Fe-clusters, which, in turn, induced more finer and higher populated nano-graphite clusters.

Structure and magnetic properties of Fe-Co-B alloy thin films prepared on cubic (001) single-crystal substrates

NASA Astrophysics Data System (ADS)

Ohtake, Mitsuru; Serizawa, Kana; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

2018-04-01

Fe70Co30 and (Fe70Co30)0.95B5 (at. %) alloy films of 5 nm thickness are prepared by sputtering on cubic (001) oxide substrates at 200 °C. The lattice mismatch between film and substrate is varied from -4.2%, 0%, to +3.5% by employing MgO, MgAl2O4, and SrTiO3 substrates, respectively. Fe70Co30 and (Fe70Co30)0.95B5 single-crystal films with bcc structure grow epitaxially on all the substrates in the orientation relationship of (001)[110]film || (001)[100]substrate. The in-plane and out-of-plane lattice constants, a and c, are in agreement within small differences ranging between +1.1% and -0.9% with the value of bulk bcc-Fe70Co30 crystal, even though there exist the lattice mismatches of -4.2% and +3.5%. The result indicates that misfit dislocations are introduced around the film/substrate interface when films are deposited on MgO and SrTiO3 substrates. The single-crystal films show in-plane magnetic anisotropies with the easy magnetization direction of bcc[100], which are reflecting the magnetocrystalline anisotropy of bulk Fe70Co30 crystal.

Crystallographic and magnetic properties of sol-gel synthesized T xCo 1-xFe 2O 4 (T=Mn and Cr) thin films

NASA Astrophysics Data System (ADS)

Kim, Kwang Joo; Kyung Kim, Hee; Ran Park, Young; Choi, Seung-li; Eun Kim, Sung; Jung Lee, Hee; Yun Park, Jae; Jin Kim, Sam

Effects of Mn and Cr substitution for Co on crystallographic and magnetic properties of inverse-spinel CoFe 2O 4 thin films were investigated. The crystal structure of the samples remain cubic for x<1 with the lattice constant ( a0) increasing with x for Mn doping and remaining constant for Cr doping. Tetrahedral Fe 2+ ions were detected in Cr xCo 1-xFe 2O 4 by Mössbauer spectroscopy while no such ions existed in Mn xCo 1-xFe 2O 4. The appearance of the tetrahedral Fe 2+ ions can be explained in terms of the Cr 3+ substitution for the octahedral Co 2+ sites with the resultant charge imbalance being compensated by a reduction of the tetrahedral Fe 3+ into Fe 2+. The observed variation in a0 and magnetic properties can be partly explained in terms of Mn 2+ and Cr 3+ substitution of octahedral sites in Mn xCo 1-xFe 2O 4 and Cr xCo 1-xFe 2O 4, respectively.

Impact of Fe doping on the electronic structure of SrTiO3 thin films determined by resonant photoemission

NASA Astrophysics Data System (ADS)

Kubacki, J.; Kajewski, D.; Goraus, J.; Szot, K.; Koehl, A.; Lenser, Ch.; Dittmann, R.; Szade, J.

2018-04-01

Epitaxial thin films of Fe doped SrTiO3 have been studied by the use of resonant photoemission. This technique allowed us to identify contributions of the Fe and Ti originating electronic states to the valence band. Two valence states of iron Fe2+ and Fe3+, detected on the base of x-ray absorption studies spectra, appeared to form quite different contributions to the valence band of SrTiO3. The electronic states within the in-gap region can be attributed to Fe and Ti ions. The Fe2+ originating states which can be connected to the presence of oxygen vacancies form a broad band reaching binding energies of about 0.5 eV below the conduction band, while Fe3+ states form in the gap a sharp feature localized just above the top of the valence band. These structures were also confirmed by calculations performed with the use of the FP-LAPW/APW+lo method including Coulomb correlations within the d shell. It has been shown that Fe doping induced Ti originating states in the energy gap which can be related to the hybridization of Ti and Fe 3d orbitals.

X-ray absorption fine structure and x-ray diffraction studies of crystallographic grains in nanocrystalline FePd:Cu thin films

NASA Astrophysics Data System (ADS)

Krupinski, M.; Perzanowski, M.; Polit, A.; Zabila, Y.; Zarzycki, A.; Dobrowolska, A.; Marszalek, M.

2011-03-01

FePd alloys have recently attracted considerable attention as candidates for ultrahigh density magnetic storage media. In this paper we investigate FePd thin alloy film with a copper admixture composed of nanometer-sized grains. [Fe(0.9 nm)/Pd(1.1 nm)/Cu(d nm)]×5 multilayers were prepared by thermal deposition at room temperature in UHV conditions on Si(100) substrates covered by 100 nm SiO2. The thickness of the copper layer has been changed from 0 to 0.4 nm. After deposition, the multilayers were rapidly annealed at 600 °C in a nitrogen atmosphere, which resulted in the creation of the FePd:Cu alloy. The structure of alloy films obtained this way was determined by x-ray diffraction (XRD), glancing angle x-ray diffraction, and x-ray absorption fine structure (EXAFS). The measurements clearly showed that the L10 FePd:Cu nanocrystalline phase has been formed during the annealing process for all investigated copper compositions. This paper concentrates on the crystallographic grain features of FePd:Cu alloys and illustrates that the EXAFS technique, supported by XRD measurements, can help to extend the information about grain size and grain shape of poorly crystallized materials. We show that, using an appropriate model of the FePd:Cu grains, the comparison of EXAFS and XRD results gives a reasonable agreement.

The properties of RE-TM magneto-optical films

NASA Astrophysics Data System (ADS)

Lee, Z. Y.; Miao, X. S.; Zhu, P.; Hu, Y. S.; Wan, D. F.; Dai, D. W.; Chen, S. B.; Lin, G. Q.

1992-09-01

In this paper, the magnetic, magneto-optical and galvonomagnetic properties, and their temperature dependence for LRE-TM SmCo, SmCoDy and HRE-TM TbFeCo magneto-optical films as high density recording media prepared by rf magnetron sputtering or evaporation are reported. By adding Dy to SmCo thin film, the SmCoDy thin film is more suitable for magneto-optical recording, its domain size being below 0.63 μm. The Kerr enhancement and corrosion protective effects of AIN and AlSiN for optimum design of the multi-layer structure of magneto-optical disk are described. The instruments of measuring the magneto-optical Kerr effect and magneto-optical recording domain characteristics of thin films are reviewed.

Magnetic and structural properties of CoFe 2O 4 thin films synthesized via a sol-gel process

NASA Astrophysics Data System (ADS)

dos S. Duque, J. G.; Macêdo, M. A.; Moreno, N. O.; Lopez, J. L.; Pfanes, H.-D.

2001-05-01

Using a sol-gel process having the coconut water as a precursor of organic chain, we synthesized thin films of cobalt ferrite. The films were characterized by using a SQUID magnetometer, an X-ray diffractometer, an X-ray spectrophotometer, Mössbauer spectroscopy and atomic force microscope. Co ferrite films annealed at 500°C for 2 h show grain sizes between 10 and 20 nm, grown as single-phase spinel structure and exhibit high coercivity and a moderate saturation magnetization (above 30 kOe).

Large magnetoelectric coupling in magnetically short-range ordered Bi₅Ti₃FeO₁₅ film.

PubMed

Zhao, Hongyang; Kimura, Hideo; Cheng, Zhenxiang; Osada, Minoru; Wang, Jianli; Wang, Xiaolin; Dou, Shixue; Liu, Yan; Yu, Jianding; Matsumoto, Takao; Tohei, Tetsuya; Shibata, Naoya; Ikuhara, Yuichi

2014-06-11

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a robust room-temperature magneto-electric coupling in a bismuth-layer-structured ferroelectric Bi₅Ti₃FeO₁₅ with high ferroelectric Curie temperature of ~1000 K. Bi₅Ti₃FeO₁₅ thin films grown by pulsed laser deposition are single-phase layered perovskit with nearly (00l)-orientation. Room-temperature multiferroic behavior is demonstrated by a large modulation in magneto-polarization and magneto-dielectric responses. Local structural characterizations by transmission electron microscopy and Mössbauer spectroscopy reveal the existence of Fe-rich nanodomains, which cause a short-range magnetic ordering at ~620 K. In Bi₅Ti₃FeO₁₅ with a stable ferroelectric order, the spin canting of magnetic-ion-based nanodomains via the Dzyaloshinskii-Moriya interaction might yield a robust magneto-electric coupling of ~400 mV/Oe·cm even at room temperature.

Evolution of LiFePO4 thin films interphase with electrolyte

NASA Astrophysics Data System (ADS)

Dupré, N.; Cuisinier, M.; Zheng, Y.; Fernandez, V.; Hamon, J.; Hirayama, M.; Kanno, R.; Guyomard, D.

2018-04-01

Many parameters may control the growth and the characteristics of the interphase, such as surface structure and morphology, structural defects, grain boundaries, surface reactions, etc. However, polycrystalline surfaces contain these parameters simultaneously, resulting in a quite complicated system to study. Working with model electrode surfaces using crystallographically oriented crystalline thin films appears as a novel and unique approach to understand contributions of preferential orientation and rugosity of the surface. In order to rebuild the interphase architecture along electrochemical cycling, LiFePO4 epitaxial films offering ideal 2D (100) interfaces are here investigated through the use of non-destructive depth profiling by Angular Resolved X-ray Photoelectron Spectroscopy (ARXPS). The composition and structure of the interphase is then monitored upon cycling for samples stopped at the end of charge and discharge for various numbers of cycles, and discussed in the light of combined XPS and X-ray reflectivity (XRR) measurements. Such an approach allows describing the interphase evolution on a specific model LiFePO4 crystallographic orientation and helps understanding the nature and evolution of the LiFePO4/electrolyte interphase forming on the surface of LiFePO4 poly-crystalline powder.

Band alignment at the CdS/FeS2 interface based on the first-principles calculation

NASA Astrophysics Data System (ADS)

Ichimura, Masaya; Kawai, Shoichi

2015-03-01

FeS2 is potentially well-suited for the absorber layer of a thin-film solar cell. Since it usually has p-type conductivity, a pn heterojunction cell can be fabricated by combining it with an n-type material. In this work, the band alignment in the heterostructure based on FeS2 is investigated on the basis of the first-principles calculation. CdS, the most popular buffer-layer material for thin-film solar cells, is selected as the partner in the heterostructure. The results indicate that there is a large conduction band offset (0.65 eV) at the interface, which will hinder the flow of photogenerated electrons from FeS2 to CdS. Thus an n-type material with the conduction band minimum positioned lower than that of CdS will be preferable as the partner in the heterostructure.

High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allard Jr, Lawrence Frederick

2016-01-01

(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize themore » binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION« less

Variation of magnetoimpedance of electrodeposited NiFe/Cu with deposition current density

NASA Astrophysics Data System (ADS)

Mishra, A. C.; Jha, A. K.

2017-12-01

An investigation about influence of deposition current density on electrodeposited magnetic film is reported in this paper. Ferromagnetic NiFe thin films were electrodeposited on copper wires of 100 μm diameter for various electrdepostion current densities ranging from 10 to 60 mA/cm2 maintaining equal thickness in all films. The composition of deposited film varied with deposition current density and in particular, a composition of Ni79Fe21 was achieved for a current density of 20 mA/cm2. The surface microstructure of the film deposited at the current density of 20 mA/cm2 was found to have excellent smoothness. The coercivity of the film was lowest and highest value of magnetoimpedance was measured for this film. The influence of current density on film composition and hence magnetic properties was attributed to the change of deposition mechanism.

Tunable band gap in Bi(Fe1-xMnx)O3 films

NASA Astrophysics Data System (ADS)

Xu, X. S.; Ihlefeld, J. F.; Lee, J. H.; Ezekoye, O. K.; Vlahos, E.; Ramesh, R.; Gopalan, V.; Pan, X. Q.; Schlom, D. G.; Musfeldt, J. L.

2010-05-01

In order to investigate band gap tunability in polar oxides, we measured the optical properties of a series of Bi(Fe1-xMnx)O3 thin films. The absorption response of the mixed metal solid solutions is approximately a linear combination of the characteristics of the two end members, a result that demonstrates straightforward band gap tunability in this system.

Instrumentation of the variable-angle magneto-optic ellipsometer and its application to M-O media and other non-magnetic films

NASA Technical Reports Server (NTRS)

Zhou, Andy F.; Erwin, J. Kevin; Mansuripur, M.

1992-01-01

A new and comprehensive dielectric tensor characterization instrument is presented for characterization of magneto-optical recording media and non-magnetic thin films. Random and systematic errors of the system are studied. A series of TbFe, TbFeCo, and Co/Pt samples with different composition and thicknesses are characterized for their optical and magneto-optical properties. The optical properties of several non-magnetic films are also measured.

The magnetic, electrical transport and magnetoresistance properties of epitaxial La0.7Sr0.3Mn1- xFexO3 (x = 0-0.20) thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Huang, Q.; Li, Z. W.; Li, J.; Ong, C. K.

2001-05-01

High-quality epitaxial La0.7Sr0.3Mn1- xFexO3 (LSMFO) thin films have been successfully prepared on SrTiO3 single-crystal substrates by pulsed laser deposition. No structural changes were observed for x≤0.12. For x = 0.2, an elongation in the a-axis direction was identified. An antiferromagnetic arrangement of Fe and Mn ions over the whole Fe-doping region and a canted spin structure at x≥0.12 were observed. Unlike the case for the bulks, only one resistivity peak was observed for the epitaxial films. This shows that one of the two resistivity peaks for polycrystalline LSMFO bulks has its origin in grain boundaries. The effect of Fe doping can be attributed to a combination of doping disorder, Fe-Mn superexchange interactions and a site-percolation mechanism, which suppress the metallic conduction and ferromagnetism. In epitaxial LSMFO thin films, extrinsic magnetoresistance (MR) related to grain boundary effects was excluded. The intrinsic MR is gradually enhanced with increasing Fe concentration. For the film with x = 0.12, a fairly large MR = 12% was observed in a small field of 4 kOe at 145 K. For those films, the resistivity above Tc (the ferromagnetic Curie temperature) follows the Emin-Holstein model for small polarons. The polaron activation energy is enhanced due to weakening of the local double-exchange ferromagnetism by Fe doping. The fitting results indicate that the lattice polarons are magnetic in nature and that non-nearest-neighbour polaron hopping exists. The resistivity below Tp (the resistivity peak temperature) follows an empirical relation, ρ(T,H) = ρ0 + ρ2(H)T2 + ρ7.5(H)T7.5. It is found that the MR arises mainly from the suppression of T7.5-terms. The enhanced MR can be attributed to the suppression of the enhanced magnetic scattering and polaron scattering under an external field.

Chiral bobbers and skyrmions in epitaxial FeGe/Si(111) films

NASA Astrophysics Data System (ADS)

Ahmed, Adam S.; Rowland, James; Esser, Bryan D.; Dunsiger, Sarah R.; McComb, David W.; Randeria, Mohit; Kawakami, Roland K.

2018-04-01

We report experimental and theoretical evidence for the formation of chiral bobbers—an interfacial topological spin texture—in FeGe films grown by molecular beam epitaxy. After establishing the presence of skyrmions in FeGe/Si(111) thin-film samples through Lorentz transmission electron microscopy and the topological Hall effect, we perform magnetization measurements that reveal an inverse relationship between the film thickness and the slope of the susceptibility (d χ /d H ). We present evidence for the evolution as a function of film thickness L from a skyrmion phase for L LD/2 , where LD˜70 nm is the FeGe pitch length. We show using micromagnetic simulations that chiral bobbers, earlier predicted to be metastable, are in fact the stable ground state in the presence of an additional interfacial Rashba Dzyaloshinskii-Moriya interaction.

Tailoring of the soft magnetic property and uniaxial anisotropy of magnetostrictive films by interlayer

NASA Astrophysics Data System (ADS)

Wen, Dandan; Bai, Feiming; Wang, Yicheng; Zhong, Zhiyong; Zhang, Huaiwu

2013-05-01

Laminated amorphous FeSiBC films with various spacer layers, including Cu, Co0.45Cu0.55, Co0.8Cu0.2, and CoFe, were prepared in order to study the effect of interface structure and magnetic exchange interaction on the magnetic softness and uniaxial anisotropy of multilayered film. It is found that laminating FeSiBC film with thin nonmagnetic or weak magnetic spacers yields much lower coercivity and higher remanent magnetization than those with magnetic spacers. Optimal films with the desired properties of Hc ˜ 1.5 Oe, Mr/Ms = 95%, and Hk ˜ 16 Oe were obtained. Therefore, it is confirmed that the exchange interaction constant of spacer layer plays a more important role than that of interface structure. Furthermore, laminating FeSiBC with nonmagnetic layers only slightly changes magnetostrictive coefficient.

Growth, structure, and magnetic properties of γ-Fe2O3 epitaxial films on MgO

NASA Astrophysics Data System (ADS)

Gao, Y.; Kim, Y. J.; Thevuthasan, S.; Chambers, S. A.; Lubitz, P.

1997-04-01

Single-crystal epitaxial thin films of γ-Fe2O3(001) have been grown on MgO(001) using oxygen-plasma-assisted molecular beam epitaxy. The structure and magnetic properties of these films have been characterized by a variety of techniques, including reflection high-energy electron diffraction (RHEED), low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy and x-ray photoelectron/Auger electron diffraction (XPD/AED), vibrating sample magnetometry, and ferromagnetic resonance. Real-time RHEED reveals that the film growth occurs in a layer-by-layer fashion. The γ-Fe2O3(001) film surface exhibits a (1×1) LEED pattern. The growth of γ-Fe2Ooverflow="scroll">3 films at 450 °C is accompanied by significant Mg outdiffusion. AED of Mg KLL Auger emission reveals that Mg substitutionally incorporates in the γ-Fe2O3 lattice, occupying the octahedral sites. Magnetic moments are ˜2300 G and ˜4500 G for γ-Fe2O3 films grown at 250 °C and 450 °C, respectively. The high magnetic moment for the films grown at 450 °C could be attributed to the high degree of structural order of the films and Mg substitution at octahedral sites.

Multiferroic BiFeO3 thin films processed via chemical solution deposition: Structural and electrical characterization

NASA Astrophysics Data System (ADS)

Iakovlev, S.; Solterbeck, C.-H.; Kuhnke, M.; Es-Souni, M.

2005-05-01

Polycrystalline BiFeO3 thin films were fabricated on (111)Pt/Ti/SiO2/Si substrates via Bi-acetate- and Fe-acetylacetonate-based chemical solution deposition and spin-coating techniques. The processing parameters were optimized in order to obtain films with high resistivity. The optical properties (refractive indices and extinction coefficients) were measured by means of ellipsometry (HeNe laser, λ=632.8Å). Microstructure characterization was made by means of atomic force microscopy, grazing incidence x-ray diffractometry (XRD), and texture analysis. Additionally, powders prepared from a stoichiometric precursor were investigated by means of thermogravimetric and differential thermal analyses and XRD. It is demonstrated that the formation of perovskite-type BiFeO3 is accompanied by the appearance of bismuth oxide at low temperatures which then transforms into Bi36Fe2O57. For the films it was found that annealing in oxygen leads to higher indices of refraction, lower roughness, and smaller grain size. Complete crystallization of the films was achieved at a substantially lower temperature compared to that of the powders. A (100) (pseudocubic) out-of-plane preferred orientation was revealed for specimens annealed in air and oxygen. It is supposed that the crystal lattice of the thin film is close to cubic possibly due to stress development at the substrate/film interface. The electrical properties of the films were measured at room temperature by impedance analysis. The piezoelectric properties were determined using a laser vibrometer. Room temperature resistances measured at 1 kHz for metal-film-metal configurations for the specimens annealed in air and O2 were 14 Ω and 1.35 kΩ, respectively. This is explained in terms of the high sensitivity of the oxidation state (+2 or +3) of iron ions to oxygen stoichiometry in the specimens. Further electrical characterization of the specimen annealed in O2 revealed very low frequency dispersion of the dielectric constant. A dielectric loss of 1% or less was detected in a wide range of frequency. The films annealed in oxygen showed piezoelectric activity with a value of the piezoelectric coefficient d33 of 12 pm/V. A relatively weak ferroelectricity (remnant polarization 2Pr of approximately 1μC/cm2) was detected for the specimens annealed in oxygen.

Structural and optical characterization of p-type highly Fe-doped SnO2 thin films and tunneling transport on SnO2:Fe/p-Si heterojunction

NASA Astrophysics Data System (ADS)

Ben Haj Othmen, Walid; Ben Hamed, Zied; Sieber, Brigitte; Addad, Ahmed; Elhouichet, Habib; Boukherroub, Rabah

2018-03-01

Nanocrystalline highly Fe-doped SnO2 thin films were prepared using a new simple sol-gel method with iron amounts of 5, 10, 15 and 20%. The obtained gel offers a long durability and high quality allowing to reach a sub-5 nm nanocrystalline size with a good crystallinity. The films were structurally characterized through X-ray diffraction (XRD) that confirms the formation of rutile SnO2. High Resolution Transmission Electron Microscopy (HRTEM) images reveals the good crystallinity of the nanoparticles. Raman spectroscopy shows that the SnO2 rutile structure is maintained even for high iron concentration. The variation of the PL intensity with Fe concentration reveals that iron influences the distribution of oxygen vacancies in tin oxide. The optical transmittance results indicate a redshift of the SnO2 band gap when iron concentration increases. The above optical results lead us to assume the presence of a compensation phenomenon between oxygen vacancies and introduced holes following Fe doping. From current-voltage measurements, an inversion of the conduction type from n to p is strongly predicted to follow the iron addition. Electrical characterizations of SnO2:Fe/p-Si and SnO2:Fe/n-Si heterojunctions seem to be in accordance with this deduction. The quantum tunneling mechanism is expected to be important at high Fe doping level, which was confirmed by current-voltage measurements at different temperatures. Both optical and electrical properties of the elaborated films present a particularity for the same iron concentration and adopt similar tendencies with Fe amount, which strongly correlate the experimental observations. In order to evaluate the applicability of the elaborated films, we proceed to the fabrication of the SnO2:Fe/SnO2 homojunction for which we note a good rectifying behavior.

In situ observation of atomic movement in a ferroelectric film under an external electric field and stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hyeon Jun; Guo, Er-Jia; Min, Taewon

Atomic movement under application of external stimuli (i.e., electric field or mechanical stress) in oxide materials has not been observed due to a lack of experimental methods but has been well known to determine the electric polarization. Here, we investigated atomic movement arising from the ferroelectric response of BiFeO 3 thin films under the effect of an electric field and stress in real time using a combination of switching spectroscopy, time-resolved X-ray microdiffraction, and in situ stress engineering. Under an electric field applied to a BiFeO 3 film, the hysteresis loop of the reflected X-ray intensity was found to resultmore » from the opposing directions of displaced atoms between the up and down polarization states. An additional shift of atoms arising from the linearly increased dielectric component of the polarization in BiFeO 3 was confirmed through gradual reduction of the diffracted X-ray intensity. The electric-fieldinduced displacement of oxygen atoms was found to be larger than that of Fe atom for both ferroelectric switching and increase of the polarization. In conclusion, the effect of external stress on the BiFeO 3 thin film, which was controlled by applying an electric field to the highly piezoelectric substrate, showed smaller atomic shifts than for the case of applying an electric field to the film, despite the similar tetragonality.« less

In situ observation of atomic movement in a ferroelectric film under an external electric field and stress

DOE PAGES

Lee, Hyeon Jun; Guo, Er-Jia; Min, Taewon; ...

2017-12-28

Atomic movement under application of external stimuli (i.e., electric field or mechanical stress) in oxide materials has not been observed due to a lack of experimental methods but has been well known to determine the electric polarization. Here, we investigated atomic movement arising from the ferroelectric response of BiFeO 3 thin films under the effect of an electric field and stress in real time using a combination of switching spectroscopy, time-resolved X-ray microdiffraction, and in situ stress engineering. Under an electric field applied to a BiFeO 3 film, the hysteresis loop of the reflected X-ray intensity was found to resultmore » from the opposing directions of displaced atoms between the up and down polarization states. An additional shift of atoms arising from the linearly increased dielectric component of the polarization in BiFeO 3 was confirmed through gradual reduction of the diffracted X-ray intensity. The electric-fieldinduced displacement of oxygen atoms was found to be larger than that of Fe atom for both ferroelectric switching and increase of the polarization. In conclusion, the effect of external stress on the BiFeO 3 thin film, which was controlled by applying an electric field to the highly piezoelectric substrate, showed smaller atomic shifts than for the case of applying an electric field to the film, despite the similar tetragonality.« less

Magnetic domains in Tb-Fe-Co thin films under anisotropy tilt

NASA Astrophysics Data System (ADS)

Talapatra, A.; Umadevi, K.; Arout Chelvane, J.; Mohanty, J.; Jayalakshmi, V.

2018-04-01

Tailoring of magnetic domains of Tb-Fe-Co thin films with rapid thermal processing has been reported in this paper. While the as-deposited films show elongated, inter-connected domains with high out-of-plane magnetic phase contrast, the rapid thermal processed films at 550 °C with different time intervals display deterioration of magnetic contrast. A longitudinal extension of domains has been observed with the processing time of 5 min. With subsequent increase in processing time, the domain patterns exhibit considerable decrease in magnetic phase difference combined with strong intermixing between two oppositely magnetized areas. The out-of-plane magnetic contrast is seen to be very weak for the Tb-Fe-Co film processed for 30 min. The domain morphology and the contrast variation have been modeled with micromagnetic simulations, considering the in-plane (along xz plane) tilt of anisotropy axis. The ground state energy profile and the variation in magnetic properties indicate the threshold tilt angle to be around 30 ° wherein the in-plane and out-of-plane squareness ratio and coercivities are comparable and hence the system shows a spin re-orientation behavior at higher tilt angles.

Transport Measurements and Synchrotron-Based X-Ray Absorption Spectroscopy of Iron Silicon Germanide Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Elmarhoumi, Nader; Cottier, Ryan; Merchan, Greg; Roy, Amitava; Lohn, Chris; Geisler, Heike; Ventrice, Carl, Jr.; Golding, Terry

2009-03-01

Some of the iron-based metal silicide and germanide phases have been predicted to be direct band gap semiconductors. Therefore, they show promise for use as optoelectronic materials. We have used synchrotron-based x-ray absorption spectroscopy to study the structure of iron silicon germanide films grown by molecular beam epitaxy. A series of Fe(Si1-xGex)2 thin films (2000 -- 8000å) with a nominal Ge concentration of up to x = 0.04 have been grown. X-ray absorption near edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) measurements have been performed on the films. The nearest neighbor co-ordination corresponding to the β-FeSi2 phase of iron silicide provides the best fit with the EXAFS data. Temperature dependent (20 < T < 350 K) magneto transport measurements were done on the Fe(Si1-xGex)2 thin films via Van Der Paw (VDP) Hall configuration using a 0.5-1T magnetic field and a current of 10-200 μA through indium ohmic contacts, the Hall coefficient was calculated. Results suggest semiconducting behavior of the films which is consistent with the EXAFS results.

Analysis of Crystal Structure of Fe3O4 Thin Films Based on Iron Sand Growth by Spin Coating Method

NASA Astrophysics Data System (ADS)

Rianto, D.; Yulfriska, N.; Murti, F.; Hidayati, H.; Ramli, R.

2018-04-01

Recently, iron sand used as one of base materials in the steel industry. However, the content of iron sand can be used as starting materials in sensor technology in the form of thin films. In this paper, we report the analysis of crystal structure of magnetite thin film based on iron sand from Tiram’s Beach. The magnetic content of sand separated by a permanent magnet, then it was milled at 30 hours milling time. In order to increase the purity of magnetite, it washed after milling using aquades under magnetic separation by a magnet permanent. The thin film has been prepared using iron (III) nitrate by sol–gel technique. The precursor is resulted by dissolving magnetite in oxalic acid and nitric acid. Then, solution of iron (III) nitrate dissolved in ethylene glycol was applied on glass substrates by spin coating. The X-Ray Diffraction is operated thin film characterization. The structure of magnetite has been studied based on X-Ray Peaks that correspond to magnetite content of thin films.

Electroelastic fields in artificially created vortex cores in epitaxial BiFeO 3 thin films

DOE PAGES

Winchester, Ben; Wisinger, Nina Balke; Cheng, X. X.; ...

2015-08-03

Here we employ phase-field modeling to explore the elastic properties of artificially created 1-D domain walls in (001) p-oriented BiFeO 3 thin films, composed of a junction of the four polarization variants, all with the same out-of-plane polarization. It was found that these junctions exhibit peculiarly high electroelastic fields induced by the neighboring ferroelastic/ferroelectric domains. The vortex core exhibits a volume expansion, while the anti-vortex core is more compressive. We also discuss possible ways to control the electroelastic field, such as varying material constant and applying transverse electric field.

Change in the magnetic structure of (Bi,Sm)FeO3 thin films at the morphotropic phase boundary probed by neutron diffraction

NASA Astrophysics Data System (ADS)

Maruyama, Shingo; Anbusathaiah, Varatharajan; Fennell, Amy; Enderle, Mechthild; Takeuchi, Ichiro; Ratcliff, William D.

2014-11-01

We report on the evolution of the magnetic structure of BiFeO3 thin films grown on SrTiO3 substrates as a function of Sm doping. We determined the magnetic structure using neutron diffraction. We found that as Sm increases, the magnetic structure evolves from a cycloid to a G-type antiferromagnet at the morphotropic phase boundary, where there is a large piezoelectric response due to an electric-field induced structural transition. The occurrence of the magnetic structural transition at the morphotropic phase boundary offers another route towards room temperature multiferroic devices.

Sharp chemical interface in epitaxial Fe{sub 3}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gálvez, S.; Rubio-Zuazo, J., E-mail: rubio@esrf.fr; Salas-Colera, E.

Chemically sharp interface was obtained on single phase single oriented Fe{sub 3}O{sub 4} (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

2015-06-01

β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

Broadband strip-line ferromagnetic resonance spectroscopy of soft magnetic CoFeTaZr patterned thin films

NASA Astrophysics Data System (ADS)

Gupta, S.; Kumar, D.; Jin, T. L.; Nongjai, R.; Asokan, K.; Ghosh, A.; Aparnadevi, M.; Suri, P.; Piramanayagam, S. N.

2018-05-01

In this paper, magnetic and magnetization dynamic properties of compositionally patterned Co46Fe40Ta9Zr5 thin films are investigated. A combination of self-assembly and ion-implantation was employed to locally alter the composition of Co46Fe40Ta9Zr5 thin film in a periodic manner. 20 keV O+ and 60 keV N+ ions were implanted at different doses in order to modify the magnetization dynamic properties of the samples in a controlled fashion. Magnetic hysteresis loop measurements revealed significant changes in the coercivity for higher influences of 5 × 1016 ions per cm2. In particular, N+ implantation was observed to induce two phase formation with high and low coercivities. Broadband strip-line ferromagnetic resonance spectroscopy over wide range of frequency (8 - 20 GHz) was used to study the magnetization dynamics as a function of ion-beam dosage. With higher fluences, damping constant showed a continuous increase from 0.0103 to 0.0430. Such control of magnetic properties at nano-scale using this method is believed to be useful for spintronics and microwave device applications.

Role of oxygen impurities in synthesis of iron mononitride thin films

NASA Astrophysics Data System (ADS)

Niti, Seema, Gupta, Mukul

2018-04-01

In this work we have studied iron mononitride (FeN) thin films. FeN is debated for its structure and often a mixed phase is obtained experimentally. Even in single phases of FeN obtain so far, an additional phase was always found even though its volume fraction was minimal. Such phases have been claimed to stem from impurities due to partial oxidation taking place during the growth. In order to study the nature of such impurities, we have deliberately introduced oxygen during the growth of FeN in a magnetron sputtering process. We found that the presence of oxygen tends to distort the tetrahedral symmetry as envisaged in the N K edge absorption spectra. The effect of oxygen impurities is subtler on the long range ordering due to formation of a disordered phase. Obtained results can be used to find the pathways to prepare a single phase FeN compound and thereafter to resolve the debate about its structure and the magnetic ground state.

Long-time relaxation of photo-induced influence on BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Gu, Jun-xing; Jin, Kui-juan; Wang, Le; He, Xu; Guo, Hai-zhong; Wang, Can; He, Meng; Yang, Guo-zhen

2015-11-01

An intuitively persistent enhancement of the local surface potential of BiFeO3 layers in both heterostructures of BiFeO3/SrRuO3/SrTiO3 and BiFeO3/Sr0.09Nb0.01TiO3 was observed by the Kelvin probe force microscopy technique after the illumination of 375 nm laser. This photo-induced enhanced surface potential can maintain as long as 15 h after the illumination. We attributed this super-long-time relaxation of photo-induced influence to a photo-induced depolarization in the BiFeO3 thin films, and our first-principles calculation of double-potential well further provides an instinct understanding on this depolarization process. Our findings provide a peculiar understanding into the photo-induced phenomena on the widely researched ferroelectric systems and offer an approach to tune their multifunctionality of the magnetization and polarization not only by applied magnetic and electric fields but also by optical filed.

Electronic structure of Cr doped Fe3O4 thin films by X-ray absorption near-edge structure spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Chi-Liang; Dong, Chung-Li; Asokan, Kandasami; Chern, G.; Chang, C. L.

2018-04-01

Present study reports the electronic structures of Cr doped Fe3O4 (Fe3-xCrxO4 (0 ≤ x ≤ 3) grown on MgO (100) substrates in the form of thin films fabricated by a plasma-oxygen assisted Molecular Beam Epitaxy (MBE). X-ray absorption near-edge structure (XANES) spectra at Cr & Fe L-, and O K-edges were used to understand the electronic structure: changes in the bonding nature, valence states, and site occupancies. Cr doping in Fe3O4 results in the change of charge transfer, crystal structure, and selective occupation of ions in octahedral and tetrahedral sites. Such change modifies the electrical and magnetic properties due to the covalency of Cr ions. The physical and chemical properties of ferrites are strongly dependent on the lattice site, ion size of dopant, and magnetic nature present at different structural symmetry of the spinel structure.

Effect of oxygen partial pressure on the density of antiphase boundaries in Fe3O4 thin films on Si(100)

NASA Astrophysics Data System (ADS)

Singh, Suraj Kumar; Husain, Sajid; Kumar, Ankit; Chaudhary, Sujeet

2018-02-01

Polycrystalline Fe3O4 thin films were grown on Si(100) substrate by reactive DC sputtering at different oxygen partial pressures PO2 for controlling the growth associated density of antiphase boundaries (APBs). The micro-Raman analyses were performed to study the structural and electronic properties in these films. The growth linked changes in the APBs density are probed by electron-phonon coupling strength (λ) and isothermal magnetization measurements. The estimated values of λ are found to vary from 0.39 to 0.56 with the increase in PO2 from 2.2 × 10-5 to 3.0 × 10-5 Torr, respectively. The saturation magnetization (saturation field) values are found to increase (decrease) from 394 (5.9) to 439 (3.0) emu/cm3 (kOe) with the increase in PO2 . The sharp Verwey transition (∼120 K), low saturation field, high saturation magnetization and low value of λ (comparable to the bulk value ∼0.51) clearly affirm the negligible amount of APBs in the high oxygen partial pressure deposited thin films.

Magnetic and topographical modifications of amorphous Co-Fe thin films induced by high energy Ag7+ ion irradiation

NASA Astrophysics Data System (ADS)

Pookat, G.; Hysen, T.; Al-Harthi, S. H.; Al-Omari, I. A.; Lisha, R.; Avasthi, D. K.; Anantharaman, M. R.

2013-09-01

We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co77Fe23 thin films on silicon substrates using 100 MeV Ag7+ ions fluences of 1 × 1011 ions/cm2, 1 × 1012 ions/cm2, 1 × 1013 ions/cm2, and 3 × 1013 ions/cm2. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

Thermal generation of spin current in epitaxial CoFe{sub 2}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Er-Jia, E-mail: ejguophysics@gmail.com, E-mail: klaeui@uni-mainz.de; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830; Herklotz, Andreas

2016-01-11

The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe{sub 2}O{sub 4} (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect. The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ∼100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effectmore » is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.« less

Room Temperature Gas Sensing Properties of Sn-Substituted Nickel Ferrite (NiFe2O4) Thin Film Sensors Prepared by Chemical Co-Precipitation Method

NASA Astrophysics Data System (ADS)

Manikandan, V.; Li, Xiaogan; Mane, R. S.; Chandrasekaran, J.

2018-04-01

Tin (Sn) substituted nickel ferrite (NiFe2O4) thin film sensors were prepared by a simple chemical co-precipitation method, which initially characterized their structure and surface morphology with the help of x-ray diffraction and scanning electron microscopy. Surface morphology of the sensing films reveals particles stick together with nearer particles and this formation leads to a large specific area as a large specific area is very useful for easy adsorption of gas molecules. Transmission electron microscopy and selected area electron diffraction pattern images confirm particle size and nanocrystallnity as due to formation of circular rings. Fourier transform infrared analysis has supported the presence of functional groups. The 3.69 eV optical band gap of the film was found which enabled better gas sensing. Gas sensors demonstrate better response and recovery characteristics, and the maximum response was 68.43%.

An investigation of thin-film Ni-Fe oxide catalysts for the electrochemical evolution of oxygen.

PubMed

Louie, Mary W; Bell, Alexis T

2013-08-21

A detailed investigation has been carried out of the structure and electrochemical activity of electrodeposited Ni-Fe films for the oxygen evolution reaction (OER) in alkaline electrolytes. Ni-Fe films with a bulk and surface composition of 40% Fe exhibit OER activities that are roughly 2 orders of magnitude higher than that of a freshly deposited Ni film and about 3 orders of magnitude higher than that of an Fe film. The freshly deposited Ni film increases in activity by as much as 20-fold during exposure to the electrolyte (KOH); however, all films containing Fe are stable as deposited. The oxidation of Ni(OH)2 to NiOOH in Ni films occurs at potentials below the onset of the OER. Incorporation of Fe into the film increases the potential at which Ni(OH)2/NiOOH redox occurs and decreases the average oxidation state of Ni in NiOOH. The Tafel slope (40 mV dec(-1)) and reaction order in OH(-) (1) for the mixed Ni-Fe films (containing up to 95% Fe) are the same as those for aged Ni films. In situ Raman spectra acquired in 0.1 M KOH at OER potentials show two bands characteristic of NiOOH. The relative intensities of these bands vary with Fe content, indicating a change in the local environment of Ni-O. Similar changes in the relative intensities of the bands and an increase in OER activity are observed when pure Ni films are aged. These observations suggest that the OER is catalyzed by Ni in Ni-Fe films and that the presence of Fe alters the redox properties of Ni, causing a positive shift in the potential at which Ni(OH)2/NiOOH redox occurs, a decrease in the average oxidation state of the Ni sites, and a concurrent increase in the activity of Ni cations for the OER.

Effect of La substitution on structural and electrical properties of BiFeO3 thin film

NASA Astrophysics Data System (ADS)

Das, S. R.; Bhattacharya, P.; Choudhary, R. N. P.; Katiyar, R. S.

2006-03-01

The effect of La substitution on the structural and electrical properties of multiferroic BiFeO3 thin films grown on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition has been reported. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all of the secondary phases. The dielectric constant of the films was systematically increased from 165 to ~350 and the films showed excellent dielectric loss behavior. We observed a gradual increase in the remnant polarization (2Pr) with lanthanum substitution obtaining a maximum value of ~42 μC/cm2 at 20 mol % La incorporation. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current decreased from 10-4 to 10-7 A/cm2 for La-substituted films at a field strength of 50 kV/cm. The reduction of dc leakage current of La-substituted films is explained on the basis of relative phase stability and improved microstructure of the material.

Nucleation Control for Large, Single Crystalline Domains of Monolayer Hexagonal Boron Nitride via Si-Doped Fe Catalysts

PubMed Central

2015-01-01

The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials. PMID:25664483

Vacancy-mediated fcc/bcc phase separation in Fe1 -xNix ultrathin films

NASA Astrophysics Data System (ADS)

Menteş, T. O.; Stojić, N.; Vescovo, E.; Ablett, J. M.; Niño, M. A.; Locatelli, A.

2016-08-01

The phase separation occurring in Fe-Ni thin films near the Invar composition is studied by using high-resolution spectromicroscopy techniques and density functional theory calculations. Annealed at temperatures around 300 ∘C ,Fe0.70Ni0.30 films on W(110) break into micron-sized bcc and fcc domains with compositions in agreement with the bulk Fe-Ni phase diagram. Ni is found to be the diffusing species in forming the chemical heterogeneity. The experimentally determined energy barrier of 1.59 ±0.09 eV is identified as the vacancy formation energy via density functional theory calculations. Thus, the principal role of the surface in the phase separation process is attributed to vacancy creation without interstitials.

Effects of sulfurization on the optical properties of Cu2ZnxFe1-xSnS4 thin films

NASA Astrophysics Data System (ADS)

Hannachi, A.; Oueslati, H.; Khemiri, N.; Kanzari, M.

2017-10-01

In order to prepare thin films of novel semiconductor materials that contain only earth abundant, low cost and nontoxic elements, Cu2ZnxFe1-xSnS4 ingots were successfully synthesized by direct fusion method. Crushed powders of these ingots were used as raw materials for the thermal evaporation. Cu2ZnxFe1-xSnS4 (with x = 0, 0.25, 0.5, 0.75 and 1) thin films were deposited on non-heated glass substrates by vacuum evaporation method. The as deposited films were sulfurized for 30 min at sulfurization temperature Ts = 400 °C. The effects of the sulfurization on the structural and optical properties of CZFTS films were realized by X-ray diffraction (XRD) and UV-Vis spectroscopy. XRD patterns show that all sulfurized CZFTS films were polycrystalline in nature with a preferential orientation along the (112) plane. CFTS films exhibit a stannite structure while CZTS films had a kesterite structure. Optical measurements showed that CZFTS films sulfurized at 400 °C exhibited an optical transmittance between 60 and 80% and all materials had relatively high absorption coefficients in the range of 104-105 cm-1. The band gap energies of sulfurized CZFTS films decreased from 1.71 to 1.50 eV with the increase of the Zn content. The dispersion of the refractive index was discussed in terms of the single oscillator model proposed by Wemple and DiDomenico and the optical parameters such as refractive index, extinction coefficient, oscillator energy and dispersion energy were calculated. The electrical free carrier susceptibility and the carrier concentration on the effective mass ratio were evaluated according to the model of Spitzer and Fan. The hot probe analysis showed that all sulfurized CZFTS films are p-type conductivity.

Universal lab on a smartphone: a research of TiOPc thin film as a light dependence electrode

NASA Astrophysics Data System (ADS)

Lin, PoHan; Hsu, Y. H.; Lee, C. K.

2014-02-01

In this paper, we study the photoconductivity of a polymer-based TiOPc (Titanium Oxide Phthalocyanine) thin-film for the development of a multi-opto-piezoelectric-valve-array. Using a polymer-based TiOPc thin film to serve as the electrode and a structural layer of a piezoelectric polymer, P(VDF-TrFE) poly[(vinylidenefluoride-co-trifluoroethylene], an optical control valve-array could be developed for manipulating multiple microdroplets for the application of digital microfluidic. In this ongoing project, the dependency of the light intensity, thickness, and composition of spin-coated polymer-based TiOPc thin-film was studied. The experimental finding suggested that a 14 to 55 times resistivity change could be achieved by controlling the film thickness to be between 0.9 μm and 1.5 μm with TiOPc concentration of 20% and 30% w/w compositions.

Magnetization and anisotropy of cobalt ferrite thin films

NASA Astrophysics Data System (ADS)

Eskandari, F.; Porter, S. B.; Venkatesan, M.; Kameli, P.; Rode, K.; Coey, J. M. D.

2017-12-01

The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455 kA m-1 , which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6 μB that is associated with the octahedrally coordinated Co2+ ions. The orbital moment is responsible for the magnetostriction and magnetocrystalline anisotropy and its sensitivity to imposed strain. We have systematically investigated the structure and magnetism of films produced by pulsed-laser deposition on different substrates (Ti O2 , MgO, MgA l2O4 , SrTi O3 , LSAT, LaAl O3 ) and as a function of temperature (500 -700 °C) and oxygen pressure (10-4-10 Pa ) . Magnetization at room-temperature ranges from 60 to 440 kA m-1 , and uniaxial substrate-induced anisotropy ranges from +220 kJ m-3 for films on deposited on MgO (100) to -2100 kJ m-3 for films deposited on MgA l2O4 (100), where the room-temperature anisotropy field reaches 14 T. No rearrangement of high-spin Fe3+ and Co2+ cations on tetrahedral and octahedral sites can reduce the magnetization below the bulk value, but a switch from Fe3+ and Co2+ to Fe2+ and low-spin Co3+ on octahedral sites will reduce the low-temperature magnetization to 120 kA m-1 , and a consequent reduction of Curie temperature can bring the room-temperature value to near zero. Possible reasons for the appearance of low-spin cobalt in the thin films are discussed.

Indentation-induced solid-state dewetting of thin Au(Fe) films

NASA Astrophysics Data System (ADS)

Kosinova, Anna; Schwaiger, Ruth; Klinger, Leonid; Rabkin, Eugen

2017-07-01

We studied the effect of local plastic deformation on the thermal stability and solid-state dewetting of thin homogeneous Au(Fe) films deposited on sapphire substrates. The films with ordered square arrays of indents produced by nanoindentation were annealed at the temperature of 700 °C in a forming gas atmosphere. The behavior of the film in the region of shallow indents (reaching a depth up to one half of the film thickness) was very different from the one in the region of deep indents (with depths greater than one half of the film thickness). In the first case, the grain growth in indented and unperturbed regions of the film proceeded quite similarly, and nearly complete healing of the indents was observed. In the latter case, a recrystallization process in the vicinity of the indents resulted in the formation of small new grains with misorientation angles that were not present in the as-deposited film. The thermal grooving along the corresponding new high-energy grain boundaries caused an increase of the depth of the indents and the formation of the dewetting holes. The morphology of these holes and their size were different compared to the holes formed randomly in the unperturbed regions of the same films. In particular, the interaction between the individual indents of an array led to the preferential formation of holes at the periphery of the arrays. These findings shed a new light on the process of nucleation of the solid-state dewetting in thin films.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering

NASA Astrophysics Data System (ADS)

Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

2016-06-01

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

PubMed

Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

2016-06-30

The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

PubMed

Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

2015-06-24

A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

Improvement of corrosion resistance of NiTi sputtered thin films by anodization

NASA Astrophysics Data System (ADS)

Bayat, N.; Sanjabi, S.; Barber, Z. H.

2011-08-01

Anodization of sputtered NiTi thin films has been studied in 1 M acetic acid at 23 °C for different voltages from 2 to 10 V. The morphology and cross-sectional structures of the untreated and anodized surfaces were investigated by field emission scanning electron microscopy (FE-SEM). The results show that increasing anodization voltage leads to film surface roughening and unevenness. It can be seen that the thickness of the anodized layer formed on the NiTi surface is in the nanometer range. The corrosion resistance of anodized thin films was studied by potentiodynamic scan (PDS) and impedance spectroscopy (EIS) techniques in Hank's solution at 310 K (37 °C). It was shown that the corrosion resistance of the anodized film surface improved with increasing voltage to 6 V. Anodization of austenitic sputtered NiTi thin films has also been studied, in the same anodizing conditions, at 4 V. Comparison of anodized sputtered NiTi thin films with anodized austenitic shape memory films illustrate that the former are more corrosion resistant than the latter after 1 h immersion in Hank's solution, which is attributed to the higher grain boundary density to quickly form a stable and protective passive film.

Hc2(0) and the Kondo Effect in FeSe0.1Te0.9 Epitaxial Films

NASA Astrophysics Data System (ADS)

Cornell, Nicholas; Zakhidov, Anvar; Jaime, Marcelo; Huang, Jijie; Wang, Hayan; Salamon, Myron

2015-03-01

High-quality, [001]-oriented epitaxial films of FeSe0.1Te0.9 have been grown on SrTiO3. They are found to have increased critical temperatures and critical fields relative to both bulk samples and thin films of the sister compound, FeSe0.5Te0.5. Critical field values in excess of 114 T have been reported based on WHH theory. In addition to these improved properties, most samples show resistance minima above Tc, reminiscent of the Kondo effect, presumably from excess Fe. We report results of a high field investigation of these thin films that reveals an empirical zero-temperature value of Hc2(0) ~ 46 T along [001], significantly less than the WHH estimate, but still exceeding the maximum strong coupling correction to the Pauli limit. Large negative magnetoresistance above the critical field confirms the presence of Kondo behavior in the normal state and persists without saturation up to 60 T. Why the measured critical field exceeds the paramagnetic limit remains a question. However, a Kondo temperature that exceeds the superconducting Tc can lead to overestimated WHH upper critical fields and could explain the wide variation in Tc and Hc2 among the ``11'' iron chalcogenides.

Ni: Fe2O3, Mg: Fe2O3 and Fe2O3 thin films gas sensor application

NASA Astrophysics Data System (ADS)

Saritas, Sevda; Kundakci, Mutlu; Coban, Omer; Tuzemen, Sebahattin; Yildirim, Muhammet

2018-07-01

Iron oxide is a widely used sensitive material for gas sensor applications. They have fascinated much attention in the field of gas sensing and detecting under atmospheric conditions and at 200 °C temperature due to their low cost in production; simplicity and fast of their use; large number of detectable gases. Iron oxide gas sensors constitute investigated for hazardous gases used in various fields. The morphological structure (particle size, pore size, etc.), optical, magnetic and electrical properties of Ni:Fe2O3, Mg:Fe2O3 and Fe2O3 thin films which grown by Spray pyrolysis (SP) have been investigated. XRD, Raman and AFM techniques have been used for structural analysis. AFM measurements have been provided very useful information about surface topography. I-V (Van der Pauw) technique has been used for response of gas sensor. These devices offer a wide variety of advantages over traditional analytical instruments such as low cost, short response time, easy manufacturing, and small size.

Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

DOE PAGES

Li, Peng; Liu, Tao; Chang, Houchen; ...

2016-09-01

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe 12O 19 bilayer where the BaFe 12O 19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control themore » up and down states of the remnant magnetization in the BaFe 12O 19 film when the film is magnetized by an in-plane magnetic field. Furthermore, it can reduce or increase the switching field of the BaFe 12O 19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.« less

Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; Demann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

2016-09-01

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films.

PubMed

Emori, Satoru; Yi, Di; Crossley, Sam; Wisser, Jacob J; Balakrishnan, Purnima P; Khodadadi, Behrouz; Shafer, Padraic; Klewe, Christoph; N'Diaye, Alpha T; Urwin, Brittany T; Mahalingam, Krishnamurthy; Howe, Brandon M; Hwang, Harold Y; Arenholz, Elke; Suzuki, Yuri

2018-06-08

Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe 3+ ions with zero orbital angular momentum. These epitaxial MAFO thin films exhibit a Gilbert damping parameter of ∼0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ∼0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.

Chemically deposited nano grain composed MoS(2) thin films for supercapacitor application.

PubMed

Pujari, R B; Lokhande, A C; Shelke, A R; Kim, J H; Lokhande, C D

2017-06-15

Low temperature soft chemical synthesis approach is employed towards MoS 2 thin film preparation on cost effective stainless steel substrate. 3-D semispherical nano-grain composed surface texture of MoS 2 film is observed through FE-SEM technique. Electrochemical supercapacitor performance of MoS 2 film is tested from cyclic voltammetry (CV) and galvanostatic charge discharge (GCD) techniques in 1M aqueous Na 2 SO 4 electrolyte. Specific capacitance (C s ) of 180Fg -1 with CV cycling stability of 82% for 1000 cycles is achieved. Equivalent series resistance (R s ) of 1.78Ωcm -2 observed through Nyquist plot shows usefulness of MoS 2 thin film for charge conduction in supercapacitor application. Copyright © 2016. Published by Elsevier Inc.

High-performance FeSe0.5Te0.5 thin films fabricated on less-well-textured flexible coated conductor templates

NASA Astrophysics Data System (ADS)

Xu, Zhongtang; Yuan, Pusheng; Ma, Yanwei; Cai, Chuanbing

2017-03-01

We report on the transport properties of FeSe0.5Te0.5 (FST) thin films fabricated on less-well-textured flexible coated conductor templates with LaMnO3 (LMO) as buffer layers using pulsed laser deposition. The LMO buffer layers exhibit large in-plane misalignment of ˜7.72°, which is unfavorable for cuprate-coated conductors due to the high grain boundaries. The FST thin films show a superconducting transition temperature of 16.8 K, higher than that of bulk materials due to the compressive strain between LMO and FST. Atomic force microscopy observations reveal that island-like features appear at the surfaces of both LMO and FST, confirming the island growth mode. A self-field transport critical-current density of up to 0.43 MA cm-2 at 4.2 K has been observed in FST thin films, which is much higher than that in powder-in-tube processed FST tapes. The films are capable of carrying current densities of over 105 A cm-2 in the whole applied magnetic field up to 9 T, showing great potential for high-field applications. The results indicate that, for FST, highly textured metal tapes are not needed to produce coated conductors with high performance, which is of great advantage over cuprate-coated conductors.

Geometrical contribution to the anomalous Nernst effect in TbFeCo thin films

NASA Astrophysics Data System (ADS)

Ando, Ryo; Komine, Takashi

2018-05-01

The geometrical contribution to the anomalous Nernst effect in magnetic thin films was experimentally investigated by varying the aspect ratios and electrode configurations. The bar-type electrode configuration induces a short-circuit current near both edges of electrodes and decreases the effective Nernst voltage, while the point-contact (PC) electrode exploits the intrinsic Nernst voltage. In a sample with PC electrodes, as the sample width along the transverse direction of the thermal flow increases, the Nernst voltage increases monotonically. Thus, a much wider element with PC electrodes enables us to bring out a larger Nernst voltage by utilizing perpendicularly magnetized thin films.

Ultra-thin L1{sub 0}-FePt for perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Pin; Chow, Gan Moog; Chen, Jing-Sheng, E-mail: msecj@nus.edu.sg

2014-05-07

Perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves (PSVs) with ultra-thin L1{sub 0}-FePt alloy free layer possessing high anisotropy and thermal stability have been fabricated and studied. The thickness of the L1{sub 0}-FePt layer was varied between 2 and 4 nm. The PSV became increasingly decoupled with reduced L1{sub 0}-FePt thickness due to the larger difference between the coercivity of the L1{sub 0}-FePt and [Co/Pd]{sub 30} films. The PSV with an ultra-thin L1{sub 0}-FePt free layer of 2 nm displayed a high K{sub u} of 2.21 × 10{sup 7} ergs/cm{sup 3}, high thermal stability of 84 and a largest giant magnetoresistance of 0.54%.

The Characteristics of an Antibacterial TiAgN Thin Film Coated by Physical Vapor Deposition Technique.

PubMed

Kang, Byeong-Mo; Jeong, Woon-Jo; Park, Gye-Choon; Yoon, Dong-Joo; Ahn, Ho-Geun; Lim, Yeong-Seog

2015-08-01

In this work, we found the characteristics of an antibacterial TiAgN thin film coated on the pure titanium specimen via the physical vapor deposition process (PVD). TiAgN thin films were coated using TiAg alloy targets by arc ion plating method. Changing the process parameters, the surface analysis of TiAgN thin film was observed by FE-SEM and the force of adhesion was measured with Scratch Tester. The proliferation of human gingival fibroblast (HGF) cells was examined by XTT test assay and the antibacterial properties were investigated by culturing Streptococus Mutans (KCTC 3065) using paper disk techniques. At the result of experiment, cytotoxic effects were not found and the antibacterial effects against Streptococus Mutans were appeared over 5 wt% TiAgN specimens.

Evolution of magnetization in epitaxial Zn1‑x Fe x O z thin films (0  ⩽  x  ⩽  0.66) grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Brachwitz, Kerstin; Böntgen, Tammo; Lenzner, Jörg; Ghosh, Kartik; Lorenz, Michael; Grundmann, Marius

2018-06-01

We demonstrate the development of phases in Zn1‑xFexOz thin films with 0  ⩽  x  ⩽  0.66, i.e. the end point phases are semiconducting ZnO for x  =  0, and ferrimagnetic zinc ferrite (ZnFe2O4) for x  =  0.66. With increasing x, the x-ray scattering intensity of the structural ZnO wurtzite phase decreases while that of the (1 1 1)-oriented ZnFe2O4 spinel phase increases. For x  >  0.4, single phase spinel layers are obtained. The enhanced formation of the spinel phase is supported by deviations from the usually expected stoichiometric transfer of chemical composition from target to thin film in pulsed laser deposition. We find that all mixed film samples show an excess of iron in relation to the target composition, independent of the growth pressure. The saturation magnetization of the samples increases with x for 0  ⩽  x  ⩽  0.66 and shows a ferrimagnetic behavior. The temperature dependence of magnetization points to Curie temperatures well above 400 K for x  ⩾  0.4. With that, the precise tuning of magnetic performance of the thin layers is possible, yielding a design degree of freedom for application-related requirements.

Study of structure and properties of oxide electrode materials (Fe3O4, AZO, SRO) and their device applications

NASA Astrophysics Data System (ADS)

Olga, Chichvarina

Ferroelectric thin film capacitor heterostructures have attracted considerable attention in the last decade because of their potential applications in piezoelectric sensors, actuators, power generators and non-volatile memory devices. Strongly correlated all-perovskite oxide heterojunctions are of a particular interest, as their material properties (electronic, structural, magnetic and optical, etc.) can be tuned via doping, interface effect, applied electrical field, and formation of two-dimensional electron gas (2DEG), etc. The right selection of electrode material for this type of capacitor-like structures may modify and enhance the performance of a device, as the electrode/barrier layer interfaces can significantly influence its macroscopic properties. Although there is a number of reports on the effect of electrode interfaces on the properties of PZT capacitors deposited on SRO buffered STO substrate, very little is known about Fe3O4/PZT and AZO/PZT electrode interfaces. This thesis comprises two parts. In the first part we present a systematic study of the structural, transport, magnetic and optical properties of oxide thin films: AZO, Fe3O4 and SRO. These monolayers were fabricated via pulsed laser deposition technique on quartz, MgO and STO substrates respectively. The second part of this thesis elucidates the behaviour of these three oxides as electrode components in PZT/SRO/STO heteroepitaxial structures. The highlights of the work are summarized below: 1) Zinc-blende (ZB) phase of ZnO was predicted to possess higher values of conductivity and higher doping efficiency compared to its wurzite counterpart and thus has greater chances of facilitating the fabrication of ZnO-electrode-based devices. However, zinc-blende is a metastable phase, and it is challenging to obtain single-phase ZB. To tackle this challenge we tuned parameters such-as film thickness, substrate and annealing effect, and achieved a ZB phase of Ti-doped ZnO, ZB-(Zn1-xTix)O thin film. An in-depth systematic study on ZnO zinc-blende formation and the underlying mechanism is presented in Chapter 3 of this work. In addition, this study also looked into the effect of ZnO doping with hydrogen and aluminum. 2) Perpendicular magnetic anisotropy in electrodes is an essential property for the development of certain types of random access memories. In order to study magnetic anisotropy of ferroelectric Fe3O4, we fabricated Fe3O4 epitaxial films of various thicknesses on MgO substrates with different orientations. Fe3O4 thin films on MgO (111)-oriented substrates showed prominent out-of-plane magnetic anisotropy. With the purpose of exploring the mechanism behind this phenomenon, we investigated the role of substrate orientation and film thickness dependency. It was shown that by using the substrates of different orientations and thereby, altering the substrate lattice strain the anisotropy manipulation in Fe3O4, thin films is possible. 3) The last part of the thesis focuses on the performance of AZO/PZT/SRO/STO and Fe3O4/PZT/SRO/STO heterostructures. High quality crystalline films with sharp interfaces and rms surface roughness 1 nm were achieved. Pronounced bipolar switching was observed in both heterostructures. More importantly, it was found that physical properties of Fe3O 4/Pb(Zr0.52Ti0.48)O3/SrRuO3/SrTiO 3 heterostructure can be modulated by introducing Fe2+ and Fe3+ cations into Pb(Zr0.52Ti0.48)O 3 active layer. The sample showed MR signal of 3% after being set into low-resistance state, attributing to the formation of Fe-related semiconductor-like channel in the Pb(Zr0.52Ti0.48)O3 layer. After resetting to high-resistance state, MR signal disappeared due to the rupture of the channel. The results paves the way to the realization of a nonvolatile multiple states Pb(ZrTi)O 3-based hybrid memory.

Soft Chemical Fabrication of Iron-Based Thin Film Electrocatalyst for Water Oxidation under Neutral pH and Structure-Activity Tuning by Cerium Incorporation.

PubMed

Saha, Jony; Radhakrishnan, T P

2017-08-29

Design of electrocatalysts for the fundamentally important oxygen evolution reaction can be greatly aided by systematic structure-activity tuning via composition variation. We have explored the iron-cerium system as they are the most abundant transition and rare earth metals, and also due to the mutualistic impact of their size and electronic attributes that can induce critical changes in the structure and electrochemical activity. Submicrometer thick films of a series of Fe(III)-Ce(III) phosphate(oxyhydroxide) (FeCePH) are fabricated using a soft chemical strategy involving surfactant-aided assembly, spin-coating, and mild thermal annealing. FT-IR, Raman, and X-ray photoelectron spectroscopies, chemical analysis, X-ray diffraction, and electron microscopy reveal the systematic structural, electronic, and morphological variation, on tuning the iron-cerium composition. Nitrogen adsorption-desorption studies show the surface area increasing and pore size distribution shrinking with the cerium content, indicating its structure-directing role. The electrocatalysis of water oxidation by FeCePH films on FTO-coated glass is studied in neutral pH conditions. The overpotential and Tafel slope decrease with increasing cerium content, reaching minima at the optimal Fe:Ce ratio of 1:0.5; the turnover frequency shows a corresponding increase and maximum. The trends are explained on the basis of the structural changes in the films, and the coupling of Ce 3+ /Ce 4+ with Fe 3+ /Fe 4+ that leads to active state regeneration. This study presents a rational strategy to tune the efficiency of easily fabricated transition metal-based electrocatalyst thin films through rare earth metal incorporation; it should prove useful in the design of cost-effective catalysts for water oxidation.

Interfacial stability of ultrathin films of magnetite Fe3O4 (111) on Al2O3(001) grown by ozone-assisted molecular-beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Hawoong; Kim, Jongjin; Fang, Xinyue

Thin films of iron oxides including magnetite (Fe3O4) and hematite (α-Fe2O3) have many important applications. Both forms of oxide can occur naturally during film growth by iron deposition under various oxidation environment; an important issue is to understand and control the process resulting in a single-phase film. We have performed in-situ real-time studies using x-ray diffraction of such film growth on sapphire (001) under pure ozone by monitoring the (00L) rod. Stable magnetite growth can be maintained at growth temperatures below 600° C up to a certain critical film thickness, beyond which the growth becomes hematite. The results demonstrate themore » importance of interfacial interaction in stabilizing the magnetite phase.« less

Growth, structure, and magnetic properties of {gamma}-Fe{sub 2}O{sub 3} epitaxial films on MgO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Y.; Kim, Y.J.; Thevuthasan, S.

1997-04-01

Single-crystal epitaxial thin films of {gamma}-Fe{sub 2}O{sub 3}(001) have been grown on MgO(001) using oxygen-plasma-assisted molecular beam epitaxy. The structure and magnetic properties of these films have been characterized by a variety of techniques, including reflection high-energy electron diffraction (RHEED), low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy and x-ray photoelectron/Auger electron diffraction (XPD/AED), vibrating sample magnetometry, and ferromagnetic resonance. Real-time RHEED reveals that the film growth occurs in a layer-by-layer fashion. The {gamma}-Fe{sub 2}O{sub 3}(001) film surface exhibits a (1{times}1) LEED pattern. The growth of {gamma}-Fe{sub 2}O{sub 3} films at 450 {degree}C is accompanied by significant Mg outdiffusion. AED ofmore » Mg KLL Auger emission reveals that Mg substitutionally incorporates in the {gamma}-Fe{sub 2}O{sub 3} lattice, occupying the octahedral sites. Magnetic moments are {approximately}2300 G and {approximately}4500 G for {gamma}-Fe{sub 2}O{sub 3} films grown at 250{degree}C and 450{degree}C, respectively. The high magnetic moment for the films grown at 450{degree}C could be attributed to the high degree of structural order of the films and Mg substitution at octahedral sites. {copyright} {ital 1997 American Institute of Physics.}« less

Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

NASA Astrophysics Data System (ADS)

Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

2016-07-01

Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol-gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au9+ ions at a fluence of 1 × 1012 ions cm-2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

Ferroelectric size effects in multiferroic BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Chu, Y. H.; Zhao, T.; Cruz, M. P.; Zhan, Q.; Yang, P. L.; Martin, L. W.; Huijben, M.; Yang, C. H.; Zavaliche, F.; Zheng, H.; Ramesh, R.

2007-06-01

Ferroelectric size effects in multiferroic BiFeO3 have been studied using a host of complementary measurements. The structure of such epitaxial films has been investigated using atomic force microscopy, transmission electron microscopy, and x-ray diffraction. The crystal structure of the films has been identified as a monoclinic phase, which suggests that the polarization direction is close to ⟨111⟩. Such behavior has also been confirmed by piezoforce microscopy measurements. That also reveals that the ferroelectricity is down to at least 2nm.

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coux, P. de; CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4; Bachelet, R.

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

Tailoring magnetic domains in Gd-Fe thin films

NASA Astrophysics Data System (ADS)

Talapatra, A.; Chelvane, J. Arout; Mohanty, J.

2018-05-01

This paper presents the global modification of magnetic domains and magnetic properties in amorphous Gd19Fe81 thin films with rapid thermal processing at two distinct temperatures (250oC and 450oC), and with different time intervals viz., 2, 5, 10 and 20 minutes. 100 nm thick as-prepared films display nano-scale meandering stripe domains with high magnetic phase contrast which is the signature of perpendicular magnetic anisotropy. The films processed at 250oC for various time intervals show successive reduction in magnetic phase contrast and domain size. The domain pattern completely disappeared, and topography dominated mixed magnetic phase has been obtained for the films processed at 450oC for time intervals greater than 2 minutes. The magnetization measurements indicate the reduction in perpendicular magnetic anisotropy with increase in saturation magnetization for all the rapid thermal processed films. The experimental outputs have been used to simulate the domain pattern. Reduction in uniaxial anisotropy along with the increase in saturation magnetization successfully explain the experimental trend of decrease in domain size and magnetic contrast.

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Yu; Meng, Dechao; Wang, Jianlin

2015-07-06

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high qualitymore » Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.« less

Long-range stripe nanodomains in epitaxial (110) BiFeO 3 thin films on (100) NdGaO 3 substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Yogesh; Agarwal, Radhe; Phatak, Charudatta

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO 3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO 3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67Sr 0.33CoO 3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change inmore » the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. Finally, this long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.« less

Long-range stripe nanodomains in epitaxial (110) BiFeO 3 thin films on (100) NdGaO 3 substrate

DOE PAGES

Sharma, Yogesh; Agarwal, Radhe; Phatak, Charudatta; ...

2017-07-07

Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO 3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO 3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La 0.67Sr 0.33CoO 3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change inmore » the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. Finally, this long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.« less

Role of magnetic exchange interaction due to magnetic anisotropy on inverse spin Hall voltage at FeSi3%/Pt thin film bilayer interface

NASA Astrophysics Data System (ADS)

Shah, Jyoti; Ahmad, Saood; Chaujar, Rishu; Puri, Nitin K.; Negi, P. S.; Kotnala, R. K.

2017-12-01

In our recent studies inverse spin Hall voltage (ISHE) was investigated by ferromagnetic resonance (FMR) using bilayer FeSi3%/Pt thin film prepared by pulsed laser deposition (PLD) technique. In ISHE measurement microwave signal was applied on FeSi3% film along with DC magnetic field. Higher magnetization value along the film-plane was measured by magnetic hysteresis (M-H) loop. Presence of magnetic anisotropy has been obtained by M-H loop which showed easy direction of magnetization when applied magnetic field is parallel to the film plane. The main result of this study is that FMR induced inverse spin Hall voltage 12.6 μV at 1.0 GHz was obtained across Pt layer. Magnetic exchange field at bilayer interface responsible for field torque was measured 6 × 1014 Ω-1 m-2 by spin Hall magnetoresistance. The damping torque and spin Hall angle have been evaluated as 0.084 and 0.071 respectively. Presence of Si atom in FeSi3% inhomogenize the magnetic exchange field among accumulated spins at bilayer interface and feebly influenced by spin torque of FeSi3% layer. Weak field torque suppresses the spin pumping to Pt layer thus low value of inverse spin Hall voltage is obtained. This study provides an excellent opportunity to investigate spin transfer torque effect, thus motivating a more intensive experimental effort for its utilization at maximum potential. The improvement in spin transfer torque may be useful in spin valve, spin battery and spin transistor application.

One-dimensional pinning behavior in Co-doped BaFe2As2 thin films

NASA Astrophysics Data System (ADS)

Mishev, V.; Seeböck, W.; Eisterer, M.; Iida, K.; Kurth, F.; Hänisch, J.; Reich, E.; Holzapfel, B.

2013-12-01

Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe2As2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors.

External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

NASA Astrophysics Data System (ADS)

Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji

2018-01-01

The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).

Growth and characterization of magnetite-maghemite thin films by the dip coating method

NASA Astrophysics Data System (ADS)

Velásquez, A. A.; Arnedo, A.

2017-11-01

We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite ( γ-Fe2O3) and two doublets attributed to superparamagnetic magnetite (Fe3O4), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

Neutron Diffraction Investigations of Magnetism in BiFeO3 Epitaxial Films

DTIC Science & Technology

2011-01-01

magnetism;epitaxial thin film;BiFeO3 Daisuke Kan, Wangchun Chen, Shannon Watson, Songxue Chi, Ross Erwin, Garry J. McIntyre, Sylvia C. Capelli, William ...Weinheim 1567wileyonlinelibrary.comAdv. Funct. Mater. 2011, 21, 1567–1574 William Ratcliff II , * Daisuke Kan , * Wangchun Chen , Shannon Watson...15 ] S. W. Lovesey , Theory of Neutron Scattering from Condensed Matter vol. 2 Oxford , New York , 1984 . [ 16 ] W. Gavin Williams

Multilayer Ni/Fe thin films as oxygen evolution catalysts for solar fuel production

NASA Astrophysics Data System (ADS)

Biset-Peiró, M.; Murcia-López, S.; Fàbrega, C.; Morante, J. R.; Andreu, T.

2017-03-01

The slow kinetics and high overpotential of the oxygen evolution reaction is one of the main limiting factors to achieve the minimum required performances of the so-called photoelectrochemical water splitting systems. An oxygen evolution catalyst (OEC) becomes essential in order to perform this process with higher efficiency. Herein, we report the physical, optical and electrochemical characterization of multilayer Ni/Fe thin films as earth-abundant OEC, to avoid the use of platinum group metals (PGM). Uniform films of thicknesses ranging from 1 to 10 nm were fabricated by sequential and alternate thermal evaporation of Ni and Fe. It was found that the successive deposition allows the fabrication of a Ni terminated surface that does not need activation due to the Fe underlayer. The lowest overpotential achieved for NiFe was 370 mV at 10 mA cm-2 and a Tafel slope of 37 mV dec-1 with 1 nm thickness and 95% transmittance. Finally, NiFe OEC was implemented on top of Mo:BiVO4 photoanodes which resulted in a reduction of the open circuit potential of 0.2 V and up to five fold increase of the oxidation efficiency at 0.7 VRHE. The results presented facilitate the practical implementation of BiVO4 photoanodes in tandem configuration for bias free photoassisted water splitting.

Origin of the butterfly-shaped magnetoresistance in reactive sputtered epitaxial Fe{sub 3}O{sub 4} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, P.; Zhang, L. T.; Mi, W. B.

2009-08-01

Epitaxial Fe{sub 3}O{sub 4} thin films were synthesized by facing-target reactive sputtering Fe targets. The epitaxy of the Fe{sub 3}O{sub 4} film on MgO (100) was examined macroscopically using x-ray diffraction, including conventional theta-2theta scan, tilting 2theta scan, phi scan, and pole figure. The observed low-field butterfly-shaped magnetoresistance (MR) are explained by the primary fast rotation of the spins far away from antiphase boundaries and the high-field MR changing linearly with magnetic field can be understood by the gradual rotation of the spins near the antiphase boundaries. It is magnetocrystalline anisotropy that causes an increase in MR below Verwey transitionmore » temperature.« less

Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film

NASA Astrophysics Data System (ADS)

Liang, Dandan; Li, Xiaoping; Wang, Junshuai; Wu, Liangchen; Chen, Peng

2018-07-01

ZnO/BiFeO3/ZnO multilayer was fabricated on silicon (Si) substrate by radio-frequency magnetron sputtering system. The resistive switching characteristics in ZnO/BiFeO3/ZnO devices are observed, and the resistive switching behavior can be modulated by white light.

Optical Properties of Fe3O4 Thin Films Prepared from the Iron Sand by Spin Coating Method

NASA Astrophysics Data System (ADS)

Yulfriska, N.; Rianto, D.; Murti, F.; Darvina, Y.; Ramli, R.

2018-04-01

Research on magnetic oxide is growing very rapidly. This magnetic oxide can be found in nature that is in iron sand. One of the beaches in Sumatera Barat containing iron sand is Tiram Beach, Padang Pariaman District, Sumatera Barat. The content of iron sand is generally in the form of magnetic minerals such as magnetite, hematite, and maghemit. Magnetite has superior properties that can be developed into thin films. The purpose of this research is to investigate the optical properties of transmittance, absorbance, reflectance and energy gap from Fe3O4 thin films. This type of research is an experimental research. The iron sand obtained from nature is first purified using a permanent magnet, then made in nanoparticle size using HEM-E3D with milling time for 30 hours. After that, the process of making thin film with sol-gel spin coating method. In this research, variation of rotation speed from spin coating is 1000 rpm, 2000 rpm and 3000 rpm. Based on XRD results indicated that the iron sand of Tiram beach contains magnetite minerals and the SEM results show that the thickness of the thin films formed is 25μm, 24μm and 11μm. The characterization tool used for characterizing optical properties is the UV-VIS Spectrophotometer. So it can be concluded that the greater the speed of rotation the thickness of the thin layer will be smaller, resulting in the transmittance and reflectance will be greater, while the absorbance will be smaller. Energy gap obtained from this research is 3,75eV, 3,75eV and 3,74eV. So the average energy gap obtained is 3,75eV.

Effect of metallic capping layers on the superconductivity in FeSe thin films.

NASA Astrophysics Data System (ADS)

Shibayev, Pavel; Salehi, Maryam; Moon, Jisoo; Oh, Seongshik; Oh Lab Team

In the past few years, there has been an increased interest in understanding the superconducting behavior of iron selenide (FeSe). Past efforts of others aimed at growing FeSe thin films yielded some success in reaching a Tc of 40K, but at present there is a stark lack of consensus among groups working on this problem. We set a goal of growing FeSe on insulating SrTiO3 (STO) substrates by optimizing both the growth temperature and the protection layer. In our quest to achieve this, we concentrate on keeping track of each compound's structural evolution with temperature via RHEED, an aspect often overlooked in papers describing FeSe growth, thus presenting a unique perspective to tackling this multifaceted challenge. Our group has grown 1, 3, and 30 unit-cell thick FeSe on STO using a state-of-the-art molecular beam epitaxy (MBE) system in our lab. Crucially, we expect to search for superconductivity in FeSe capped by unprecedented metallic protection layers. In addition, the FeSe/STO heterostructures with FeTe protection layers will be grown to enable comparison of existing transport data and scanning tunneling spectra (STS) to data involving our own novel cappings. Support: NSF EFRI Scholars program (1542798), EPiQS Initiative (GBMF4418).

Single-domain multiferroic BiFeO 3 films

DOE PAGES

Kuo, Chang -Yang; Hu, Z.; Yang, J. C.; ...

2016-09-01

The strong coupling between antiferromagnetism and ferroelectricity at room temperature found in BiFeO 3 generates high expectations for the design and development of technological devices with novel functionalities. However, the multi-domain nature of the material tends to nullify the properties of interest and complicates the thorough understanding of the mechanisms that are responsible for those properties. Here we report the realization of a BiFeO 3 material in thin film form with single-domain behaviour in both its magnetism and ferroelectricity: the entire film shows its antiferromagnetic axis aligned along the crystallographic b axis and its ferroelectric polarization along the c axis.more » With this we are able to reveal that the canted ferromagnetic moment due to the Dzyaloshinskii–Moriya interaction is parallel to the a axis. Moreover, by fabricating a Co/BiFeO 3 heterostructure, we demonstrate that the ferromagnetic moment of the Co film does couple directly to the canted moment of BiFeO 3.« less

Hematite Thin Films with Various Nanoscopic Morphologies Through Control of Self-Assembly Structures

NASA Astrophysics Data System (ADS)

Liu, Jingling; Kim, Yong-Tae; Kwon, Young-Uk

2015-05-01

Hematite (α-Fe2O3) thin films with various nanostructures were synthesized through self-assembly between iron oxide hydroxide particles, generated by hydrolysis and condensation of Fe(NO3)3 · 6H2O, and a Pluronic triblock copolymer (F127, (EO)106(PO)70(EO)106, EO = ethylene oxide, PO = propylene oxide), followed by calcination. The self-assembly structure can be tuned by introducing water in a controlled manner through the control of the humidity level in the surrounding of the as-cast films during aging stage. For the given Fe(NO3)3 · 6H2O:F127 ratio, there appear to be three different thermodynamically stable self-assembly structures depending on the water content in the film material, which correspond to mesoporous, spherical micellar, and rod-like micellar structures after removal of F127. Coupled with the thermodynamic driving forces, the kinetics of the irreversible reactions of coalescence of iron oxide hydroxide particles into larger ones induce diverse nanostructures of the resultant films. The length scale of so-obtained nanostructures ranges from 6 nm to a few hundred nanometers. In addition to water content, the effects of other experimental parameters such as aging temperature, spin rate during spin coating, type of substrate, and type of iron reagent were investigated.

Phase-transformation in iron oxide and formation of Cu/γ-Fe2O3 nanocomposite using radio-frequency sputtering with metal chips on an α-Fe2O3 target

NASA Astrophysics Data System (ADS)

Abe, Seishi; Watanabe, Masato

2017-07-01

A simple technique that uses radio-frequency sputtering with a functional element on a hematite (α-Fe2O3) target is presented for the production of maghemite (γ-Fe2O3) thin films. These films are prepared on water-cooled glass substrates in an Ar atmosphere. Investigations are done with Ti, Si, Al, Cu, Mo, and Zn, with γ-Fe2O3 being obtained only in the presence of Cu, indicating that phase transition occurs only for this metal. Mössbauer spectra and magnetization analysis reveal that the quality of the obtained γ-Fe2O3 films is higher than that of the film produced using Mg, which was reported in our previous work. High-angle annular dark-field scanning tunneling electron microscopy and electron energy-loss spectroscopy reveal that the added Cu remains in a metallic state (without oxidization), forming a Cu/γ-Fe2O3 phase-mixture in the as-deposited film. The Cu/γ-Fe2O3 composite film exhibits negative magnetoresistance (MR), with a MR ratio of approximately 0.6% at room temperature in an applied field of 10 kOe, and a negative Faraday rotation of -5708 deg cm-1 at 830 nm.

The half-metallicity of Co2FeGe full Heusler alloy in (001) thin film: First principles study

NASA Astrophysics Data System (ADS)

Hyun, Jung-Min; Kim, Miyoung

2018-01-01

The electronic and magnetic properties of the Co2FeGe full Heusler alloy in (001) thin film are investigated using the first-principles electronic structure calculations within the density functional theory. We employ various exchange correlation functionals including the local density approximation (LDA), the generalized gradient approximation (GGA), and the additional + U corrections for strong on-site Coulomb interaction of transition metal 3d states, aiming to examine the correlation effect on the electronic structures which determine the spin gap and thus the half-metallicity. Our results reveal that the Co2FeGe thin film is metallic in both LDA and GGA, while the + U correction opens up the spin gap for spin minority channel in GGA+ U but not in LDA+U in contrast to its bulk alloy which is predicted to be half-metallic in both LDA+ U and GGA+ U approaches with total spin magnetic moment of 6 μ B . It is found that the surface states developed around the Fermi level and the enhanced 3d e g - t 2 g band splitting for the spin minority channel due to the correlation effect play critical roles to determine the emergence of the half-metallicity.

Epitaxial Fe/Y2O3 interfaces as a model system for oxide-dispersion-strengthened ferritic alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.

2015-02-01

The fundamental mechanisms underlying the superior radiation tolerance properties of oxide-dispersion-strengthened ferritic steels and nanostructured ferritic alloys are poorly understood. Thin film heterostructures of Fe/Y2O3 can serve as a model system for fundamental studies of radiation damage. Epitaxial thin films of Y2O3 were deposited by pulsed laser deposition on 8% Y:ZrO2 (YSZ) substrates with (100), (110), and (111) orientation. Metallic Fe was subsequently deposited by molecular beam epitaxy. Characterization by x-ray diffraction and Rutherford backscattering spectrometry in the channeling geometry revealed a degree of epitaxial or axiotaxial ntation for Fe(211) deposited on Y2O3(110)/YSZ(110). In contrast, Fe on Y2O3(111)/YSZ(111) was fullymore » polycrystalline, and Fe on Y2O3(100)/YSZ(100) exhibited out-of-plane texture in the [110] direction with little or no preferential in-plane orientation. Scanning transmission electron microscopy imaging of Fe(211)/Y2O3(110)/YSZ(110) revealed a strongly islanded morphology for the Fe film, with no epitaxial grains visible in the cross-sectional sample. Well-ordered Fe grains with no orientation to the underlying Y2O3 were observed. Well-ordered crystallites of Fe with both epitaxial and non-epitaxial orientations on Y2O3 are a promising model system for fundamental studies of radiation damage phenomena. This is illustrated with preliminary results of He bubble formation following implantation with a helium ion microscope. He bubble formation is shown to preferentially occur at the Fe/Y2O3 interface.« less

Thermoelectric properties of Zn4Sb3/CeFe(4-x)CoxSb12 nano-layered superlattices modified by MeV Si ion beam

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Minamisawa, R. A.; Muntele, C. I.; Ila, D.

2014-08-01

We prepared multilayers of superlattice thin film system with 50 periodic alternating nano-layers of semiconducting half-Heusler β-Zn4Sb3 and skutterudite CeFe2Co2Sb12 compound thin films using ion beam assisted deposition (IBAD) with Au layers deposited on both sides as metal contacts. The deposited multilayer thin films have alternating layers about 5 nm thick. The total thickness of the multilayer system is 275 nm. The superlattices were then bombarded by 5 MeV Si ion at six different fluences to form nano-cluster structures. The film thicknesses and composition were monitored by Rutherford backscattering spectrometry (RBS) before and after MeV ion bombardment. We have measured the thermoelectric efficiency, Figure of Merit ZT, of the fabricated device by measuring the cross plane thermal conductivity by the 3rd harmonic (3ω) method, the cross plane Seebeck coefficient, and the electrical conductivity using the van der Pauw method before and after the MeV ion bombardments. We reached the remarkable thermoelectric Figure of Merit results at optimal fluences.

Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

NASA Astrophysics Data System (ADS)

Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

2016-11-01

Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

Magnetic anisotropy modulation of epitaxial Fe3O4 films on MgO substrates

NASA Astrophysics Data System (ADS)

Chichvarina, O.; Herng, T. S.; Xiao, W.; Hong, X.; Ding, J.

2015-05-01

Fe3O4 has been widely studied because of its great potential in spintronics and other applications. As a magnetic electrode, it is highly desired if magnetic anisotropy can be controlled. Here, we report the results from our systematic study on the magnetic properties of magnetite (Fe3O4) thin films epitaxially grown on various MgO substrates. Strikingly, we observed a prominent perpendicular magnetic anisotropy in Fe3O4 film deposited on MgO (111) substrate. When measured in out-of-plane direction, the film (40 nm thick) exhibits a well-defined square hysteresis loop with coercivity (Hc) above 1 kOe, while much lower coercivity was obtained in the in-plane orientation. In sharp contrast, the films deposited onto MgO (100) and MgO (110) substrates show in-plane magnetic anisotropy. These films exhibit a typical soft magnet characteristic—Hc lies within the range of 200-400 Oe. All the films showed a clear Verwey transition near 120 K—a characteristic of Fe3O4 material. In addition, a series of magnetoresistance (MR) measurements is performed and the MR results are in good agreement with the magnetic observations. The role of the substrate orientation and film thickness dependency is also investigated.