Width-Dependent Band Gap in Armchair Graphene Nanoribbons Reveals Fermi Level Pinning on Au(111)

PubMed Central

2017-01-01

We report the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4″-dibromo-para-terphenyl as the molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can subsequently be fused sideways to form atomically precise aGNRs of varying widths. We measure the frontier bands by means of scanning tunneling spectroscopy, corroborating that the nanoribbon’s band gap is inversely proportional to their width. Interestingly, valence bands are found to show Fermi level pinning as the band gap decreases below a threshold value around 1.7 eV. Such behavior is of critical importance to understand the properties of potential contacts in GNR-based devices. Our measurements further reveal a particularly interesting system for studying Fermi level pinning by modifying an adsorbate’s band gap while maintaining an almost unchanged interface chemistry defined by substrate and adsorbate. PMID:29049879

Random walk numerical simulation for hopping transport at finite carrier concentrations: diffusion coefficient and transport energy concept.

PubMed

Gonzalez-Vazquez, J P; Anta, Juan A; Bisquert, Juan

2009-11-28

The random walk numerical simulation (RWNS) method is used to compute diffusion coefficients for hopping transport in a fully disordered medium at finite carrier concentrations. We use Miller-Abrahams jumping rates and an exponential distribution of energies to compute the hopping times in the random walk simulation. The computed diffusion coefficient shows an exponential dependence with respect to Fermi-level and Arrhenius behavior with respect to temperature. This result indicates that there is a well-defined transport level implicit to the system dynamics. To establish the origin of this transport level we construct histograms to monitor the energies of the most visited sites. In addition, we construct "corrected" histograms where backward moves are removed. Since these moves do not contribute to transport, these histograms provide a better estimation of the effective transport level energy. The analysis of this concept in connection with the Fermi-level dependence of the diffusion coefficient and the regime of interest for the functioning of dye-sensitised solar cells is thoroughly discussed.

Composition-dependent magnetic response properties of Mn1 -xFexGe alloys

NASA Astrophysics Data System (ADS)

Mankovsky, S.; Wimmer, S.; Polesya, S.; Ebert, H.

2018-01-01

The composition-dependent behavior of the Dzyaloshinskii-Moriya interaction (DMI), the spin-orbit torque (SOT), as well as anomalous and spin Hall conductivities of Mn1 -xFexGe alloys have been investigated by first-principles calculations using the relativistic multiple scattering Korringa-Kohn-Rostoker (KKR) formalism. The Dxx component of the DMI exhibits a strong dependence on the Fe concentration, changing sign at x ≈0.85 in line with previous theoretical calculations as well as with experimental results demonstrating the change of spin helicity at x ≈0.8 . A corresponding behavior with a sign change at x ≈0.5 is predicted also for the Fermi-sea contribution to the SOT, because this is closely related to the DMI. In the case of anomalous and spin Hall effects it is shown that the calculated Fermi-sea contributions are rather small and the composition-dependent behavior of these effects are determined mainly by the electronic states at the Fermi level. The spin-orbit-induced scattering mechanisms responsible for both these effects suggest a common origin of the minimum of the anomalous Hall effect and the sign change of the spin Hall effect conductivities.

Magnetotransport study of Dirac fermions in YbMnBi 2 antiferromagnet

DOE PAGES

Wang, Aifeng; Zaliznyak, I.; Ren, Weijun; ...

2016-10-15

We report quantum transport and Dirac fermions in YbMnBi 2 single crystals. YbMnBi 2 is a layered material with anisotropic conductivity and magnetic order below 290 K. Magnetotransport properties, nonzero Berry phase, and small cyclotron mass indicate the presence of Dirac fermions. Lastly, angular-dependent magnetoresistance indicates a possible quasi-two-dimensional Fermi surface, whereas the deviation from the nontrivial Berry phase expected for Dirac states suggests the contribution of parabolic bands at the Fermi level or spin-orbit coupling.

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

NASA Astrophysics Data System (ADS)

Ferrandis, Philippe; Billaud, Mathilde; Duvernay, Julien; Martin, Mickael; Arnoult, Alexandre; Grampeix, Helen; Cassé, Mikael; Boutry, Hervé; Baron, Thierry; Vinet, Maud; Reimbold, Gilles

2018-04-01

To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposition. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH4)2S or NH4OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide.

One- and two-channel Kondo model with logarithmic Van Hove singularity: A numerical renormalization group solution

NASA Astrophysics Data System (ADS)

Zhuravlev, A. K.; Anokhin, A. O.; Irkhin, V. Yu.

2018-02-01

Simple scaling consideration and NRG solution of the one- and two-channel Kondo model in the presence of a logarithmic Van Hove singularity at the Fermi level is given. The temperature dependences of local and impurity magnetic susceptibility and impurity entropy are calculated. The low-temperature behavior of the impurity susceptibility and impurity entropy turns out to be non-universal in the Kondo sense and independent of the s-d coupling J. The resonant level model solution in the strong coupling regime confirms the NRG results. In the two-channel case the local susceptibility demonstrates a non-Fermi-liquid power-law behavior.

Self-consistent mean-field approach to the statistical level density in spherical nuclei

NASA Astrophysics Data System (ADS)

Kolomietz, V. M.; Sanzhur, A. I.; Shlomo, S.

2018-06-01

A self-consistent mean-field approach within the extended Thomas-Fermi approximation with Skyrme forces is applied to the calculations of the statistical level density in spherical nuclei. Landau's concept of quasiparticles with the nucleon effective mass and the correct description of the continuum states for the finite-depth potentials are taken into consideration. The A dependence and the temperature dependence of the statistical inverse level-density parameter K is obtained in a good agreement with experimental data.

Half-metallic properties, single-spin negative differential resistance, and large single-spin Seebeck effects induced by chemical doping in zigzag-edged graphene nanoribbons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xi-Feng; Zhou, Wen-Qian; Hong, Xue-Kun

2015-01-14

Ab initio calculations combining density-functional theory and nonequilibrium Green’s function are performed to investigate the effects of either single B atom or single N atom dopant in zigzag-edged graphene nanoribbons (ZGNRs) with the ferromagnetic state on the spin-dependent transport properties and thermospin performances. A spin-up (spin-down) localized state near the Fermi level can be induced by these dopants, resulting in a half-metallic property with 100% negative (positive) spin polarization at the Fermi level due to the destructive quantum interference effects. In addition, the highly spin-polarized electric current in the low bias-voltage regime and single-spin negative differential resistance in the highmore » bias-voltage regime are also observed in these doped ZGNRs. Moreover, the large spin-up (spin-down) Seebeck coefficient and the very weak spin-down (spin-up) Seebeck effect of the B(N)-doped ZGNRs near the Fermi level are simultaneously achieved, indicating that the spin Seebeck effect is comparable to the corresponding charge Seebeck effect.« less

Potentiometric Titrations for Measuring the Capacitance of Colloidal Photodoped ZnO Nanocrystals.

PubMed

Brozek, Carl K; Hartstein, Kimberly H; Gamelin, Daniel R

2016-08-24

Colloidal semiconductor nanocrystals offer a unique opportunity to bridge molecular and bulk semiconductor redox phenomena. Here, potentiometric titration is demonstrated as a method for quantifying the Fermi levels and charging potentials of free-standing colloidal n-type ZnO nanocrystals possessing between 0 and 20 conduction-band electrons per nanocrystal, corresponding to carrier densities between 0 and 1.2 × 10(20) cm(-3). Potentiometric titration of colloidal semiconductor nanocrystals has not been described previously, and little precedent exists for analogous potentiometric titration of any soluble reductants involving so many electrons. Linear changes in Fermi level vs charge-carrier density are observed for each ensemble of nanocrystals, with slopes that depend on the nanocrystal size. Analysis indicates that the ensemble nanocrystal capacitance is governed by classical surface electrical double layers, showing no evidence of quantum contributions. Systematic shifts in the Fermi level are also observed with specific changes in the identity of the charge-compensating countercation. As a simple and contactless alternative to more common thin-film-based voltammetric techniques, potentiometric titration offers a powerful new approach for quantifying the redox properties of colloidal semiconductor nanocrystals.

Cu doped diamond: Effect of charge state and defect aggregation on spin interactions in a 3d transition metal doped wide band-gap semiconductor

NASA Astrophysics Data System (ADS)

Benecha, E. M.; Lombardi, E. B.

2018-05-01

We present a first principles study of Cu in diamond using DFT+U electronic structure methods, by carefully considering the impact of co-doping, charge state, and Fermi level position on its stability, lattice location, spin states, and electronic properties. We show that the energetic stability and spin states of Cu are strongly dependent on the Fermi level position and the type of diamond co-doping, with Cu being energetically more favorable in n-type or p-type co-doped diamond compared to intrinsic diamond. Since Cu has been predicted to order magnetically in a number of other wide band-gap semiconductors, we have also evaluated this possibility for Cu doped diamond. We show that while Cu exhibits strong spin interactions at specific interatomic separations in diamond, a detailed consideration of the impact of Fermi level position and Cu aggregation precludes magnetic ordering, with Cu forming non-magnetic, antiferromagnetic, or paramagnetic clusters. These results have important implications in the understanding of the properties of transition metal dopants in diamond for device applications.

Thermodynamics of GaN(s)-NH3(v)+N2(v)+H2(v) system - Electronic aspects of the processes at GaN(0001) surface

NASA Astrophysics Data System (ADS)

Kempisty, Pawel; Strak, Pawel; Sakowski, Konrad; Krukowski, Stanislaw

2017-08-01

Comprehensive analysis of GaN(0001) surface in equilibrium with ammonia/hydrogen mixture was undertaken using results of ab initio calculations. Adsorption energies of the species derived from ammonia and molecular hydrogen and their stable sites were obtained. It was shown that the adsorption process type and energy depend on the position of Fermi level at the surface. Hydrogen decomposes into two separate H atoms, always adsorbed in the positions on top of the surface Ga atoms (On-top). Ammonia adsorption at GaN(0001) surface proceeds molecularly to ammonia in the On-top position or dissociatively into NH2 radicals in bridge (NH2-bridge) or On-top positions or into NH radicals in H3 (NH-H3) site. Presence of these species affects Fermi level pinning at the surface due to creation of new surface states. The Fermi level pinning in function of the surface attached species concentration was determined using extended electron counting rule (EECR). Results of ab initio calculations fully proved validity of the EECR predictions. Thermodynamic analysis of the surface in equilibrium with molecular hydrogen and ammonia vapor mixture is made giving the range of ammonia and hydrogen pressures, corresponding to Fermi level pinned at Ga-broken bond state for NH-H3&H and NH3&H and NH2-bridge&H coverage and at VBM for NH3 & H coverage. As the region of Fermi level pinned at Ga broken bond state corresponds to very low pressures, at pressures close to normal, GaN(0001) surface is almost totally covered by H, NH3 and NH2 located in On-top positions. It is also shown however that dominant portion of the hydrogen and ammonia pressures corresponds to Fermi level not pinned. Among them are these corresponding to MOVPE and HVPE growth conditions in which the surface is almost fully covered by NH3, NH2 and H species in On-top positions.

The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals

NASA Astrophysics Data System (ADS)

Wang, Pengfei; Nan, Ruihua; Jian, Zengyun

2017-06-01

The deep-level defects of CdZnTe (CZT) crystals grown by the modified vertical Bridgman (MVB) method act as trapping centers or recombination centers in the band gap, which have significant effects on its electrical properties. The resistivity and electron mobility-lifetime product of high resistivity Cd0.9Zn0.1Te wafer marked CZT1 and low resistivity Cd0.9Zn0.1Te wafer marked CZT2 were tested respectively. Their deep-level defects were identified by thermally stimulated current (TSC) spectroscopy and thermoelectric effect spectroscopy (TEES) respectively. Then the trap-related parameters were characterized by the simultaneous multiple peak analysis (SIMPA) method. The deep donor level ({E}{{DD}}) dominating dark current was calculated by the relationship between dark current and temperature. The Fermi-level was characterized by current-voltage measurements of temperature dependence. The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy. The results show the traps concentration and capture cross section of CZT1 are lower than CZT2, so its electron mobility-lifetime product is greater than CZT2. The Fermi-level of CZT1 is closer to the middle gap than CZT2. The degree of Fermi-level pinned by {E}{{DD}} of CZT1 is larger than CZT2. It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges. Project supported by the National Natural Science Foundation of China (No. 51502234) and the Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China (No. 15JS040).

Berry phase and anomalous transport of the composite fermions at the half-filled Landau level

NASA Astrophysics Data System (ADS)

Pan, W.; Kang, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

2017-12-01

The fractional quantum Hall effect (FQHE) in two-dimensional electron systems is an exotic, superfluid-like matter with an emergent topological order. From the consideration of the Aharonov-Bohm interaction between electrons and magnetic field, the ground state of a half-filled lowest Landau level is mathematically transformed to a Fermi sea of composite objects of electrons bound to two flux quanta, termed composite fermions (CFs). A strong support for the CF theories comes from experimental confirmation of the predicted Fermi surface at ν = 1/2 (where ν is the Landau level filling factor) from the detection of the Fermi wavevector in semi-classical geometrical resonance experiments. Recent developments in the theory of CFs have led to the prediction of a π Berry phase for the CF circling around the Fermi surface at half-filling. In this paper we provide experimental evidence for the detection of the Berry phase of CFs in the fractional quantum Hall effect. Our measurements of the Shubnikov-de Haas oscillations of CFs as a function carrier density at a fixed magnetic field provide strong support for the existence of a π Berry phase at ν = 1/2. We also discover that the conductivity of composite fermions at ν = 1/2 displays an anomalous linear density dependence, whose origin remains mysterious yet tantalizing.

Transport and NMR characteristics of the skutterudite-related compound Ca3Rh4Sn13

NASA Astrophysics Data System (ADS)

Tseng, C. W.; Kuo, C. N.; Li, B. S.; Wang, L. M.; Gippius, A. A.; Kuo, Y. K.; Lue, C. S.

2018-02-01

We report the electronic properties of the Yb3Rh4Sn13-type single crystalline Ca3Rh4Sn13 by means of the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity, as well as 119Sn nuclear magnetic resonance (NMR) measurements. The negative sign of the Hall coefficient and Seebeck coefficient at low temperatures suggests that the n-type carriers dominate the electrical transport in Ca3Rh4Sn13, in contrast to the observations in Sr3Rh4Sn13 which has a p-type conduction. Such a finding indicates a significant difference in the electronic features between these two stannides. Furthermore, we analyzed the temperature-dependent 119Sn NMR spin-lattice relaxation rate for Ca3Rh4Sn13, (Sr0.7Ca0.3)3Rh4Sn13, and Sr3Rh4Sn13 to examine the change of the electronic Fermi-level density of states (DOS) in (Sr1-xCax)3Rh4Sn13. It indicates that the Sn 5s partial Fermi-level DOS enhances with increasing the Ca content, being consistent with the trend of the superconducting temperature. Since the total Fermi-level DOS usually obeys the same trend of the partial Fermi-level DOS, the NMR analysis provides microscopic evidence for the correlation between the electronic DOS and superconductivity of the (Sr1-xCax)3Rh4Sn13 system.

Friedel oscillation near a van Hove singularity in two-dimensional Dirac materials

NASA Astrophysics Data System (ADS)

Lu, Chi-Ken

2016-02-01

We consider Friedel oscillation in the two-dimensional Dirac materials when the Fermi level is near the van Hove singularity. Twisted graphene bilayer and the surface state of topological crystalline insulator are the representative materials which show low-energy saddle points that are feasible to probe by gating. We approximate the Fermi surface near saddle point with a hyperbola and calculate the static Lindhard response function. Employing a theorem of Lighthill, the induced charge density δ n due to an impurity is obtained and the algebraic decay of δ n is determined by the singularity of the static response function. Although a hyperbolic Fermi surface is rather different from a circular one, the static Lindhard response function in the present case shows a singularity similar with the response function associated with circular Fermi surface, which leads to the δ n\\propto {{R}-2} at large distance R. The dependences of charge density on the Fermi energy are different. Consequently, it is possible to observe in twisted graphene bilayer the evolution that δ n\\propto {{R}-3} near Dirac point changes to δ n\\propto {{R}-2} above the saddle point. Measurements using scanning tunnelling microscopy around the impurity sites could verify the prediction.

Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy

NASA Astrophysics Data System (ADS)

Drachenko, O.; Patanè, A.; Kozlova, N. V.; Zhuang, Q. D.; Krier, A.; Eaves, L.; Helm, M.

2011-04-01

We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x =0. The high carrier densities (˜1018 cm-3) at x˜1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs.

Solid state cloaking for electrical charge carrier mobility control

DOEpatents

Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

2015-07-07

An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

Redox-dependent spatially resolved electrochemistry at graphene and graphite step edges.

PubMed

Güell, Aleix G; Cuharuc, Anatolii S; Kim, Yang-Rae; Zhang, Guohui; Tan, Sze-yin; Ebejer, Neil; Unwin, Patrick R

2015-04-28

The electrochemical (EC) behavior of mechanically exfoliated graphene and highly oriented pyrolytic graphite (HOPG) is studied at high spatial resolution in aqueous solutions using Ru(NH3)6(3+/2+) as a redox probe whose standard potential sits close to the intrinsic Fermi level of graphene and graphite. When scanning electrochemical cell microscopy (SECCM) data are coupled with that from complementary techniques (AFM, micro-Raman) applied to the same sample area, different time-dependent EC activity between the basal planes and step edges is revealed. In contrast, other redox couples (ferrocene derivatives) whose potential is further removed from the intrinsic Fermi level of graphene and graphite show uniform and high activity (close to diffusion-control). Macroscopic voltammetric measurements in different environments reveal that the time-dependent behavior after HOPG cleavage, peculiar to Ru(NH3)6(3+/2+), is not associated particularly with any surface contaminants but is reasonably attributed to the spontaneous delamination of the HOPG with time to create partially coupled graphene layers, further supported by conductive AFM measurements. This process has a major impact on the density of states of graphene and graphite edges, particularly at the intrinsic Fermi level to which Ru(NH3)6(3+/2+) is most sensitive. Through the use of an improved voltammetric mode of SECCM, we produce movies of potential-resolved and spatially resolved HOPG activity, revealing how enhanced activity at step edges is a subtle effect for Ru(NH3)6(3+/2+). These latter studies allow us to propose a microscopic model to interpret the EC response of graphene (basal plane and edges) and aged HOPG considering the nontrivial electronic band structure.

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, J.; Levin, E. M.; Lee, Y.

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

DOE PAGES

Cui, J.; Levin, E. M.; Lee, Y.; ...

2016-08-18

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band ismore » separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.« less

Metal-to-insulator crossover in alkali doped zeolite

PubMed Central

Igarashi, Mutsuo; Jeglič, Peter; Krajnc, Andraž; Žitko, Rok; Nakano, Takehito; Nozue, Yasuo; Arčon, Denis

2016-01-01

We report a systematic nuclear magnetic resonance investigation of the 23Na spin-lattice relaxation rate, 1/T1, in sodium loaded low-silica X (LSX) zeolite, Nan/Na12-LSX, for various loading levels of sodium atoms n across the metal-to-insulator crossover. For high loading levels of n ≥ 14.2, 1/T1T shows nearly temperature-independent behaviour between 10 K and 25 K consistent with the Korringa relaxation mechanism and the metallic ground state. As the loading levels decrease below n ≤ 11.6, the extracted density of states (DOS) at the Fermi level sharply decreases, although a residual DOS at Fermi level is still observed even in the samples that lack the metallic Drude-peak in the optical reflectance. The observed crossover is a result of a complex loading-level dependence of electric potential felt by the electrons confined to zeolite cages, where the electronic correlations and disorder both play an important role. PMID:26725368

Modeling the instability behavior of thin film devices: Fermi Level Pinning

NASA Astrophysics Data System (ADS)

Moeini, Iman; Ahmadpour, Mohammad; Gorji, Nima E.

2018-05-01

We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at multiple levels occurs due to high concentration of electron-traps or acceptor-like defects at the interface of a Schottky or pn junction and this re-arranges the recombination rate and charage collection. Shift of these levels under stress conditions determines the change in current-voltage characteristics of the cell. This theory was suggested for several device such as metal/n-CdTe, CdS/CdTe, CIGS/CdS or even GaAs solar cells without a modeling approach to clearly explain it's physics. We have applied the strong SNS modeling approach to shed light on Fermi Level Pinning theory. The modeling confirms that change in position of Fermi Level and it's pining in a lower level close to Valence band increases the recombination and reduces the open-circuit voltage. In contrast, Fermi Level pinning close to conduction band strengthens the electric field at the junction which amplifies the carrier collection and boosts the open-circuit voltage. This theory can well explain the stress effect on device characteristics of various solar cells or Schottky junctions by simply finding the right Fermi level pinning position at every specific stress condition.

Non-Fermi-liquid nature and exotic thermoelectric power in the heavy-fermion superconductor UBe13

NASA Astrophysics Data System (ADS)

Shimizu, Yusei; Pourret, Alexandre; Knebel, Georg; Palacio-Morales, Alexandra; Aoki, Dai

2015-12-01

We report quite exotic thermoelectric power S in UBe13. At 0 T, the negative S /T continues to strongly enhance down to the superconducting transition temperature with no Fermi-liquid behavior. |S /T | is dramatically suppressed and becomes rather modest with increasing field. We have also obtained precise field dependencies of (i) an anomaly in S due to an exotic Kondo effect and (ii) a field-induced anomaly in S /T associated with the anomalous upward Hc 2(T ) . In contrast to the field-sensitive transport property, the normal-state specific heat is magnetically robust, indicating that the largeness of the 5 f density of states remains in high fields. This unusual behavior in UBe13 can be explained by a considerable change in the energy derivative of the conduction-electron lifetime τc(ɛ ) at the Fermi level under magnetic fields.

Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference.

PubMed

Lin, Chun-Liang; Arafune, Ryuichi; Liu, Ro-Ya; Yoshimura, Masato; Feng, Baojie; Kawahara, Kazuaki; Ni, Zeyuan; Minamitani, Emi; Watanabe, Satoshi; Shi, Youguo; Kawai, Maki; Chiang, Tai-Chang; Matsuda, Iwao; Takagi, Noriaki

2017-11-28

Weyl semimetals (WSMs) are classified into two types, type I and II, according to the topology of the Weyl point, where the electron and hole pockets touch each other. Tungsten ditelluride (WTe 2 ) has garnered a great deal of attention as a strong candidate to be a type-II WSM. However, the Weyl points for WTe 2 are located above the Fermi level, which has prevented us from identifying the locations and the connection to the Fermi arc surface states by using angle-resolved photoemission spectroscopy. Here, we present experimental proof that WTe 2 is a type-II WSM. We measured energy-dependent quasiparticle interference patterns with a cryogenic scanning tunneling microscope, revealing the position of the Weyl point and its connection with the Fermi arc surface states, in agreement with prior theoretical predictions. Our results provide an answer to this crucial question and stimulate further exploration of the characteristics of WSMs.

Evolution of Fermi Surface Properties in CexLa1-xB6 and PrxLa1-xB6

NASA Astrophysics Data System (ADS)

Endo, Motoki; Nakamura, Shintaro; Isshiki, Toshiyuki; Kimura, Noriaki; Nojima, Tsutomu; Aoki, Haruyoshi; Harima, Hisatomo; Kunii, Satoru

2006-11-01

We report the de Haas-van Alphen (dHvA) effect measurements of the Fermi surface properties in LaB6, CexLa1-xB6 (x = 0.1, 0.25, 0.5, 0.75, 1.0) and PrxLa1-xB6 (x = 0.25, 0.5, 0.75, 1.0) with particular attention to the spin dependence of the Fermi surface properties. The Fermi surface shape and dimension of CexLa1-xB6 change considerably with Ce concentration, while those of PrxLa1-xB6 change very slightly up to x = 0.75, and in PrB6 the Fermi surface splits into the up and down spin Fermi surfaces. The effective mass of CexLa1-xB6 increases considerably with Ce concentration and is nearly proportional to the number of Ce ions, whereas that of PrxLa1-xB6 increases slightly with Pr concentration. In CexLa1-xB6 the effective mass depends very strongly on field and increases divergently with decreasing field, while that of PrxLa1-xB6 increases slightly with decreasing field. The contribution to the dHvA signal from the conduction electrons of one spin direction diminishes with Ce concentration and appears to disappear somewhere around x = 0.25--0.5. A weak spin dependence is also found in PrxLa1-xB6. The behaviors of CexLa1-xB6 and PrxLa1-xB6 are compared to discuss the origin of the spin dependence of the Fermi surface properties.

Xenon-plasma-light low-energy ultrahigh-resolution photoemission study of Co(S1-xSex)2 (x=0.075)

NASA Astrophysics Data System (ADS)

Sato, Takafumi; Souma, Seigo; Sugawara, Katsuaki; Nakayama, Kosuke; Raj, Satyabrata; Hiraka, Haruhiro; Takahashi, Takashi

2007-09-01

We have performed low-energy ultrahigh-resolution photoemission spectroscopy on Co(S1-xSex)2 (x=0.075) to elucidate the bulk electronic states responsible for the ferromagnetic transition. By using a newly developed plasma-driven low-energy xenon (Xe) discharge lamp (hν=8.436eV) , we clearly observed a sharp quasiparticle peak at the Fermi level together with the remarkable temperature dependence of the electron density of states across the transition temperature. Comparison with the experimental result by the HeIα resonance line (hν=21.218eV) indicates that the sharp quasiparticle is of bulk origin and is produced by the Fermi-level crossing of the Co 3d eg↓ subband.

Anodic iridium oxide films: An UPS study of emersed electrodes

NASA Astrophysics Data System (ADS)

Kötz, E. R.; Neff, H.

1985-09-01

Formation of anodic iridium oxide films has been monitored using Ultraviolet Photoemission Spectroscopy (UPS) of the emersed electrodes. The potential dependent valence band spectra clearly show the onset of oxide formation at about 0.6 V versus SCE. The density of states at the Fermi level and the positron of the Fermi level with respect to the maximum of the t 2g band of the oxide indicates a transition from metallic to semiconducting behaviour of the oxide. Protonation of the oxide is associated with increased emission from OH species. A linear correlation between electrode potential and workfunction change is observed for the metal as well as for the oxide. Our results confirm known band theory models and provide a fundamental understanding of the electrochromism of anodic iridium oxide films.

Doping dependence of ordered phases and emergent quasiparticles in the doped Hubbard-Holstein model

DOE PAGES

Mendl, C. B.; Nowadnick, E. A.; Huang, E. W.; ...

2017-11-15

Here, we present determinant quantum Monte Carlo simulations of the hole-doped single-band Hubbard-Holstein model on a square lattice, to investigate how quasiparticles emerge when doping a Mott insulator (MI) or a Peierls insulator (PI). The MI regime at large Hubbard interaction U and small relative e-ph coupling strength λ is quickly suppressed upon doping, by drawing spectral weight from the upper Hubbard band and shifting the lower Hubbard band towards the Fermi level, leading to a metallic state with emergent quasiparticles at the Fermi level. On the other hand, the PI regime at large λ and small U persists outmore » to relatively high doping levels. We study the evolution of the d-wave superconducting susceptibility with doping, and find that it increases with lowering temperature in a regime of intermediate values of U and λ.« less

Doping dependence of ordered phases and emergent quasiparticles in the doped Hubbard-Holstein model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mendl, C. B.; Nowadnick, E. A.; Huang, E. W.

Here, we present determinant quantum Monte Carlo simulations of the hole-doped single-band Hubbard-Holstein model on a square lattice, to investigate how quasiparticles emerge when doping a Mott insulator (MI) or a Peierls insulator (PI). The MI regime at large Hubbard interaction U and small relative e-ph coupling strength λ is quickly suppressed upon doping, by drawing spectral weight from the upper Hubbard band and shifting the lower Hubbard band towards the Fermi level, leading to a metallic state with emergent quasiparticles at the Fermi level. On the other hand, the PI regime at large λ and small U persists outmore » to relatively high doping levels. We study the evolution of the d-wave superconducting susceptibility with doping, and find that it increases with lowering temperature in a regime of intermediate values of U and λ.« less

Understanding the spectral hardenings and radial distribution of Galactic cosmic rays and Fermi diffuse γ rays with spatially-dependent propagation

NASA Astrophysics Data System (ADS)

Guo, Yi-Qing; Yuan, Qiang

2018-03-01

Recent direct measurements of Galactic cosmic ray spectra by balloon/space-borne detectors reveal spectral hardenings of all major nucleus species at rigidities of a few hundred GV. The all-sky diffuse γ -ray emissions measured by the Fermi Large Area Telescope also show spatial variations of the intensities and spectral indices of cosmic rays. These new observations challenge the traditional simple acceleration and/or propagation scenario of Galactic cosmic rays. In this work, we propose a spatially dependent diffusion scenario to explain all these phenomena. The diffusion coefficient is assumed to be anticorrelated with the source distribution, which is a natural expectation from the charged particle transportation in a turbulent magnetic field. The spatially dependent diffusion model also gives a lower level of anisotropies of cosmic rays, which are consistent with observations by underground muons and air shower experiments. The spectral variations of cosmic rays across the Galaxy can be properly reproduced by this model.

Tunable Fermi Contour Anisotropy in GaAs Electron and Hole Systems

NASA Astrophysics Data System (ADS)

Kamburov, Dobromir G.

This Thesis explores the ballistic transport of quasi two-dimensional (2D) electron and hole systems confined to GaAs quantum wells and subjected to a periodic, strain-induced density modulation. In the presence of an applied perpendicular magnetic field, whenever the diameter of the charged carriers' cyclotron orbit becomes commensurate with the period of the density modulation, the sample's resistance exhibits commensurability features. We use the commensurability effects to directly probe the size of the cyclotron orbit, the Fermi contour, and the spin-polarization of particles at low magnetic field and of composite fermions near even-denominator Landau level filling factors (nu). We establish how the commensurability signatures depend on the sample parameters, including the carrier density, the modulation period, and the width of the confining quantum well. In the presence of a small perpendicular magnetic field (B⊥ ), both 2D electrons and holes are essentially spin-unpolarized and their Fermi contours are nearly circular. When an additional parallel component B∥ is introduced, it couples to the carriers' out-of-plane motion and leads to a severe distortion of the energy bands and the Fermi contours. The degree of anisotropy is typically stronger in the wider quantum wells but it also depends on the carrier type. For a given QW width, holes become anisotropic more readily than electrons. The application of B ∥ also affects the spin-polarization of the carriers. Hole samples, for example, become more spin-polarized compared to electrons. We can semi-quantitatively explain the shape and size of the electron and hole Fermi contours with a theoretical calculation with no adjustable parameters based on an 8 x 8 Kane Hamiltonian. In addition to the electron and hole data at low perpendicular magnetic fields, we observe commensurability features for composite fermions near Landau level filling factors nu = 3=2, 1/2, and 1/4. Our data reveal an asymmetry of the composite fermion commensurability features on the two sides of filling factors nu = 1=2 and 3=2. The asymmetry is a fascinating manifestation of a subtle breaking of the particle-hole equivalence in the ballistic transport of composite fermions. It is consistent with a transport picture in which the minority carriers capture flux quanta to form composite fermions. We also employ commensurability oscillations as a tool to probe and quantify the effect of B∥ on the composite fermion Fermi contours. Our measurements reveal that, thanks to the finite layer thickness of the carriers and the coupling of their out-of-plane motion to B∥, the Fermi contours of nu = 1=2 and 3/2 composite fermions are significantly distorted. Furthermore, depending on the width of the quantum well and the sample density, in the vicinity of nu = 3=2 the spin-polarization of the composite fermions varies while near nu = 1=2 they remain fully spin-polarized.

Temperature dependence of superfluid density in YBa 2Cu 3O 7- δ and Y 0.7Ca 0.3Ba 2Cu 3O 7- δ thin films: A doping dependence study of the linear slope

NASA Astrophysics Data System (ADS)

Lai, L. S.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.

2005-11-01

By using a microstrip ring resonator to measure the temperature dependence of the in-plane magnetic penetration depth λ(T) in YBa2Cu3O7-δ (YBCO) and Y0.7Ca0.3Ba2Cu3O7-δ (Ca-YBCO) epitaxially grown thin films, the linear temperature dependence of the superfluid density ρs/m∗ ≡ 1/λ2(T) was observed from the under- to the overdoped regime at the temperatures below T/Tc ≈ 0.3 . For the underdoped regime of YBCO and Ca-YBCO thin films, the magnitude of the slope d(1/λ2(T))/dT is insensitive to doping, and it can be treated in the framework of projected d-density-wave model. Combining these slope values with the thermal conductivity measurements, the Fermi-liquid correction factor α2 from the Fermi-liquid model, suggested by Wen and Lee, was revealed here with various doping levels.

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE PAGES

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

2018-03-13

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Effect of electron-phonon coupling on energy and density of states renormalizations of dynamically screened graphene

NASA Astrophysics Data System (ADS)

Leblanc, J. P. F.; Carbotte, J. P.; Nicol, E. J.

2012-02-01

Motivated by recent tunneling and angle-resolved photoemission (ARPES) work [1,2], we explore the combined effect of electron-electron and electron-phonon couplings on the renormalized energy dispersion, the spectral function, and the density of states of doped graphene. We find that the plasmarons seen in ARPES are also observable in the density of states and appear as structures with quadratic dependence on energy about the minima. Further, we illustrate how knowledge of the slopes of both the density of states and the renormalized dispersion near the Fermi level can allow for the separation of momentum and frequency dependent renormalizations to the Fermi velocity. This analysis should allow for the isolation of the renormalization due to the electron-phonon interaction from that of the electron-electron interaction. [4pt] [1] Brar et al. Phys. Rev. Lett. 104, 036805 (2010) [2] Bostwick et al. Science 328, p.999 (2010)

Thermoelectric power of PrMg3

NASA Astrophysics Data System (ADS)

Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

2010-01-01

PrMg3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg3.

Magnetic-Field Dependences of Thermodynamic Quantities in the Vortex State of Type-Ii Superconductors

NASA Astrophysics Data System (ADS)

Watanabe, Koichi; Kita, Takafumi; Arai, Masao

2006-08-01

We develop an alternative method to solve the Eilenberger equations numerically for the vortex-lattice states of type-II superconductors. Using it, we clarify the magnetic-field and impurity-concentration dependences of the magnetization, the entropy, the Pauli paramagnetism, and the mixing of higher Landau levels in the pair potential for two-dimensional s- and dx2-y2-wave superconductors with a cylindrical Fermi surface.

Metal insulator transition in nickel substituted FeSi

NASA Astrophysics Data System (ADS)

Krishnan, M.; Mishra, Ashish; Singh, Durgesh; Venkatesh, R.; Gangrade, Mohan; Ganesan, V.

2018-04-01

Resistivity of Fe1-xNixSi has been reported. Metal Insulator transition (MIT) is observed in Nickel (Ni) substituted FeSi for x in the range from 2 to 4 percentage. Two Band Model has been employed in order to calculate activation energy and to predict how band structure renormalized with substitution of nickel in FeSi. At sufficient level of nickel concentration an impurity band forms around Fermi level and contributes to the conduction heavily at low temperatures. Concentration around x = 0.04, displays metallic property below ˜ 70 K and is quantitatively similar to systems like Fe1-xTxSi (T = Co, Mn). Metallic component thus derived from Ni substituted FeSi seems to have an unconventional temperature dependence that may be attributed to the onset of departures from Fermi liquid picture.

Angular dependence of spin-orbit spin-transfer torques

NASA Astrophysics Data System (ADS)

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurélien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-04-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Transformation behavior of Ni-Mn-Ga in the low-temperature limit.

PubMed

Pérez-Landazábal, J I; Recarte, V; Sánchez-Alarcos, V; Chernenko, V A; Barandiarán, J M; Lázpita, P; Rodriguez Fernández, J; Righi, L

2012-07-11

The magnetic, magnetocaloric and thermal characteristics have been studied in a Ni(50.3)Mn(20.8)Ga(27.6)V(1.3) ferromagnetic shape memory alloy (FSMA) transforming martensitically at around 40 K. The alloy shows first a transformation from austenite to an intermediate phase and then a partial transformation to an orthorhombic martensite, all the phases being ferromagnetically ordered. The thermomagnetization dependences enabled observation of the magnetocaloric effect in the vicinity of the martensitic transformation (MT). The Debye temperature and the density of states at the Fermi level are equal to θ(D) = (276 ± 4) K and 1.3 states/atom eV , respectively, and scarcely dependent on the magnetic field. The MT exhibited by Ni-Mn-Ga FSMAs at very low temperatures is distinctive in the sense that it is accompanied by a hardly detectable entropy change as a sign of a small driving force. The enhanced stability of the cubic phase and the low driving force of the MT stem from the reduced density of states near the Fermi level.

Small Fermi surfaces of PtSn4 and Pt3In7

NASA Astrophysics Data System (ADS)

Yara, T.; Kakihana, M.; Nishimura, K.; Hedo, M.; Nakama, T.; Ōnuki, Y.; Harima, H.

2018-05-01

An extremely large magnetoresistance of PtSn4 has been recently observed and discussed from a viewpoint of de Haas-van Alphen (dHvA) oscillations and theoretical small Fermi surfaces. We have studied precisely the Fermi surfaces by measuring angular dependences of dHvA frequencies and have also carried out the full potential LAPW band calculation. Furthermore, small Fermi surfaces have been detected in another Pt-based compound of Pt3In7 with the cubic structure.

Evidence for a small hole pocket in the Fermi surface of underdoped YBa2Cu3Oy

PubMed Central

Doiron-Leyraud, N.; Badoux, S.; René de Cotret, S.; Lepault, S.; LeBoeuf, D.; Laliberté, F.; Hassinger, E.; Ramshaw, B. J.; Bonn, D. A.; Hardy, W. N.; Liang, R.; Park, J.-H..; Vignolles, D.; Vignolle, B.; Taillefer, L.; Proust, C.

2015-01-01

In underdoped cuprate superconductors, the Fermi surface undergoes a reconstruction that produces a small electron pocket, but whether there is another, as yet, undetected portion to the Fermi surface is unknown. Establishing the complete topology of the Fermi surface is key to identifying the mechanism responsible for its reconstruction. Here we report evidence for a second Fermi pocket in underdoped YBa2Cu3Oy, detected as a small quantum oscillation frequency in the thermoelectric response and in the c-axis resistance. The field-angle dependence of the frequency shows that it is a distinct Fermi surface, and the normal-state thermopower requires it to be a hole pocket. A Fermi surface consisting of one electron pocket and two hole pockets with the measured areas and masses is consistent with a Fermi-surface reconstruction by the charge–density–wave order observed in YBa2Cu3Oy, provided other parts of the reconstructed Fermi surface are removed by a separate mechanism, possibly the pseudogap. PMID:25616011

Spatial modulation of the Fermi level by coherent illumination of undoped GaAs

NASA Astrophysics Data System (ADS)

Nolte, D. D.; Olson, D. H.; Glass, A. M.

1989-11-01

The Fermi level in undoped GaAs has been modulated spatially by optically quenching EL2 defects. The spatial gradient of the Fermi level produces internal electric fields that are much larger than fields generated by thermal diffusion alone. The resulting band structure is equivalent to a periodic modulation-doped p-i-p structure of alternating insulating and p-type layers. The internal fields are detected via the electro-optic effect by the diffraction of a probe laser in a four-wave mixing geometry. The direct control of the Fermi level distinguishes this phenomenon from normal photorefractive behavior and introduces a novel nonlinear optical process.

Observation of an electron band above the Fermi level in FeTe₀.₅₅Se₀.₄₅ from in-situ surface doping

DOE PAGES

Zhang, P.; Richard, P.; Xu, N.; ...

2014-10-27

We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe₀.₅₅Se₀.₄₅. The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily-electron-doped KFe₂₋ xSe₂ compound.

Electrostatic interactions between ions near Thomas-Fermi substrates and the surface energy of ionic crystal at imperfect metals

PubMed Central

Kaiser, V.; Comtet, J.; Niguès, A.; Siria, A.; Coasne, B.; Bocquet, L.

2017-01-01

The electrostatic interaction between two charged particles is strongly modified in the vicinity of a metal. This situation is usually accounted for by the celebrated image charges approach, which was further extended to account for the electronic screening properties of the metal at the level of the Thomas-Fermi description. In this paper we build upon the approach by [Kornyshev et al. Zh. Eksp. Teor. Fiz., 78(3):1008–1019, 1980] and successive works to calculate the 1-body and 2-body electrostatic energy of ions near a metal in terms of the Thomas-Fermi screening length. We propose workable approximations suitable for molecular simulations of ionic systems close to metallic walls. Furthermore, we use this framework to calculate analytically the electrostatic contribution to the surface energy of a one dimensional crystal at a metallic wall and its dependence on the Thomas-Fermi screening length. These calculations provide a simple interpretation for the surface energy in terms of image charges, which allow for an estimate of interfacial properties in more complex situations of a disordered ionic liquid close to a metal surface. A counterintuitive outcome is that electronic screening, as characterized by a molecular Thomas-Fermi length ℓTF, profoundly affects the wetting of ionic systems close to a metal, in line with the recent experimental observation of capillary freezing of ionic liquids in metallic confinement. PMID:28436506

Nonadiabatic Dynamics May Be Probed through Electronic Coherence in Time-Resolved Photoelectron Spectroscopy.

PubMed

Bennett, Kochise; Kowalewski, Markus; Mukamel, Shaul

2016-02-09

We present a hierarchy of Fermi golden rules (FGRs) that incorporate strongly coupled electronic/nuclear dynamics in time-resolved photoelectron spectroscopy (TRPES) signals at different levels of theory. Expansion in the joint electronic and nuclear eigenbasis yields the numerically most challenging exact FGR (eFGR). The quasistatic Fermi Golden Rule (qsFGR) neglects nuclear motion during the photoionization process but takes into account electronic coherences as well as populations initially present in the pumped matter as well as those generated internally by coupling between electronic surfaces. The standard semiclassical Fermi Golden Rule (scFGR) neglects the electronic coherences and the nuclear kinetic energy during the ionizing pulse altogether, yielding the classical Condon approximation. The coherence contributions depend on the phase-profile of the ionizing field, allowing coherent control of TRPES signals. The photoelectron spectrum from model systems is simulated using these three levels of theory. The eFGR and the qsFGR show temporal oscillations originating from the electronic or vibrational coherences generated as the nuclear wave packet traverses a conical intersection. These oscillations, which are missed by the scFGR, directly reveal the time-evolving splitting between electronic states of the neutral molecule in the curve-crossing regime.

The effect of exchange interaction on quasiparticle Landau levels in narrow-gap quantum well heterostructures.

PubMed

Krishtopenko, S S; Gavrilenko, V I; Goiran, M

2012-04-04

Using the 'screened' Hartree-Fock approximation based on the eight-band k·p Hamiltonian, we have extended our previous work (Krishtopenko et al 2011 J. Phys.: Condens. Matter 23 385601) on exchange enhancement of the g-factor in narrow-gap quantum well heterostructures by calculating the exchange renormalization of quasiparticle energies, the density of states at the Fermi level and the quasiparticle g-factor for different Landau levels overlapping. We demonstrate that exchange interaction yields more pronounced Zeeman splitting of the density of states at the Fermi level and leads to the appearance of peak-shaped features in the dependence of the Landau level energies on the magnetic field at integer filling factors. We also find that the quasiparticle g-factor does not reach the maximum value at odd filling factors in the presence of large overlapping of spin-split Landau levels. We advance an argument that the behavior of the quasiparticle g-factor in weak magnetic fields is defined by a random potential of impurities in narrow-gap heterostructures. © 2012 IOP Publishing Ltd

Anisotropies in the diffuse gamma-ray background from dark matter with Fermi LAT: A closer look

DOE PAGES

Cuoco, A.; Sellerholm, A.; Conrad, J.; ...

2011-06-21

We perform a detailed study of the sensitivity to the anisotropies related to dark matter (DM) annihilation in the isotropic gamma-ray background (IGRB) as measured by the Fermi Large Area Telescope ( Fermi LAT). For the first time, we take into account the effects of the Galactic foregrounds and use a realistic representation of the Fermi LAT. We implement an analysis pipeline which simulates Fermi LAT data sets starting from model maps of the Galactic foregrounds, the Fermi-resolved point sources, the extragalactic diffuse emission and the signal from DM annihilation. The effects of the detector are taken into account bymore » convolving the model maps with the Fermi LAT instrumental response. We then use the angular power spectrum to characterize the anisotropy properties of the simulated data and to study the sensitivity to DM. We consider DM anisotropies of extragalactic origin and of Galactic origin (which can be generated through annihilation in the Milky Way substructures) as opposed to a background of anisotropies generated by sources of astrophysical origin, blazars for example. We find that with statistics from 5 yr of observation, Fermi is sensitive to a DM contribution at the level of 1–10 per cent of the measured IGRB depending on the DM mass m χ and annihilation mode. In terms of the thermally averaged cross-section , this corresponds to ~10 –25 cm 3 s –1, i.e. slightly above the typical expectations for a thermal relic, for low values of the DM mass m χ≲ 100 GeV. As a result, the anisotropy method for DM searches has a sensitivity comparable to the usual methods based only on the energy spectrum and thus constitutes an independent and complementary piece of information in the DM puzzle.« less

Splitting Fermi Surfaces and Heavy Electronic States in Non-Centrosymmetric U3Ni3Sn4

NASA Astrophysics Data System (ADS)

Maurya, Arvind; Harima, Hisatomo; Nakamura, Ai; Shimizu, Yusei; Homma, Yoshiya; Li, DeXin; Honda, Fuminori; Sato, Yoshiki J.; Aoki, Dai

2018-04-01

We report the single-crystal growth of the non-centrosymmetric paramagnet U3Ni3Sn4 by the Bridgman method and the Fermi surface properties detected by de Haas-van Alphen (dHvA) experiments. We have also investigated single-crystal U3Ni3Sn4 by single-crystal X-ray diffraction, magnetization, electrical resistivity, and heat capacity measurements. The angular dependence of the dHvA frequencies reveals many closed Fermi surfaces, which are nearly spherical in topology. The experimental results are in good agreement with local density approximation (LDA) band structure calculations based on the 5f-itinerant model. The band structure calculation predicts many Fermi surfaces, mostly with spherical shape, derived from 12 bands crossing the Fermi energy. To our knowledge, the splitting of Fermi surfaces due to the non-centrosymmetric crystal in 5f-electron systems is experimentally detected for the first time. The temperature dependence of the dHvA amplitude reveals a large cyclotron effective mass of up to 35 m0, indicating the heavy electronic state of U3Ni3Sn4 due to the proximity of the quantum critical point. From the field dependence of the dHvA amplitude, a mean free path of conduction electrons of up to 1950 Å is detected, reflecting the good quality of the grown crystal. The small splitting energy related to the antisymmetric spin-orbit interaction is most likely due to the large cyclotron effective mass.

Hydrogenated borophene as a stable two-dimensional Dirac material with an ultrahigh Fermi velocity.

PubMed

Xu, Li-Chun; Du, Aijun; Kou, Liangzhi

2016-10-05

The recent synthesis of monolayer borophene (triangular boron monolayer) on a substrate has opened the era of boron nanosheets (Science, 2015, 350, 1513), but the structural instability and a need to explore the novel physical properties are still open issues. Here we demonstrated that borophene can be stabilized by full surface hydrogenation (borophane), from first-principles calculations. Most interestingly, our calculations show that borophane has direction-dependent Dirac cones, which are mainly caused by the in-plane p x and p y orbitals of boron atoms. The Dirac fermions possess an ultrahigh Fermi velocity of up to 3.5 × 10 6 m s -1 under the HSE06 level, which is 4 times higher than that of graphene. The Young's moduli are calculated to be 190 and 120 GPa nm along two different directions, which are comparable to those of steel. The ultrahigh Fermi velocity and good mechanical features render borophane ideal for nanoelectronic applications.

Superconductivity in the two-dimensional Hubbard model

NASA Astrophysics Data System (ADS)

Beenen, J.; Edwards, D. M.

1995-11-01

Quasiparticle bands of the two-dimensional Hubbard model are calculated using the Roth two-pole approximation to the one-particle Green's function. Excellent agreement is obtained with recent Monte Carlo calculations, including an anomalous volume of the Fermi surface near half-filling, which can possibly be explained in terms of a breakdown of Fermi liquid theory. The calculated bands are very flat around the (π,0) points of the Brillouin zone in agreement with photoemission measurements of cuprate superconductors. With doping there is a shift in spectral weight from the upper band to the lower band. The Roth method is extended to deal with superconductivity within a four-pole approximation allowing electron-hole mixing. It is shown that triplet p-wave pairing never occurs. A self-consistent solution with singlet dx2-y2-wave pairing is found and optimal doping occurs when the van Hove singularity, corresponding to the flat band part, lies at the Fermi level. Nearest-neighbor antiferromagnetic correlations play an important role in flattening the bands near the Fermi level and in favoring superconductivity. However, the mechanism for superconductivity is a local one, in contrast to spin-fluctuation exchange models. For reasonable values of the hopping parameter the transition temperature Tc is in the range 10-100 K. The optimum doping δc lies between 0.14 and 0.25, depending on the ratio U/t. The gap equation has a BCS-like form and 2Δmax/kTc~=4.

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr

We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasingmore » temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.« less

Enhanced Electromagnetic and Chemical/Biological Sensing. Properties of Atomic Cluster-Derived Materials

DTIC Science & Technology

2003-02-24

electron injection at interfaces, analysis of the voltage dependence of the electrostatic potential across molecules, the nature of binding at the...nanoscale titania into a metallic surface), analysis of the so-called band lineup between the molecular levels and the Fermi levels of the metal...observe the CNT’s in the electron microscope with the possibility to manipulate them externally and to apply potentials to them. These new

Thermodynamic and mechanical properties of TiC from ab initio calculation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dang, D. Y.; Fan, J. L.; Gong, H. R., E-mail: gonghr@csu.edu.cn

2014-07-21

The temperature-dependent thermodynamic and mechanical properties of TiC are systematically investigated by means of a combination of density-functional theory, quasi-harmonic approximation, and thermal electronic excitation. It is found that the quasi-harmonic Debye model should be pertinent to reflect thermodynamic properties of TiC, and the elastic properties of TiC decease almost linearly with the increase of temperature. Calculations also reveal that TiC possesses a pronounced directional pseudogap across the Fermi level, mainly due to the strong hybridization of Ti 3d and C 2p states. Moreover, the strong covalent bonding of TiC would be enhanced (reduced) with the decrease (increase) of temperature,more » while the change of volume (temperature) should have negligible effect on density of states at the Fermi level. The calculated results agree well with experimental observations in the literature.« less

Influence of Dopants in ZnO Films on Defects

NASA Astrophysics Data System (ADS)

Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

2008-12-01

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

The role of rare-earth dopants in tailoring the magnetism and magnetic anisotropy in Fe4N

NASA Astrophysics Data System (ADS)

Li, Zirun; Mi, Wenbo; Bai, Haili

2018-05-01

The magnetism and magnetic anisotropy of the rare-earth (RE) atom-substituted Fe4N are investigated by first-principles calculations. It is found that the substitution of one RE atom results in an antiferromagnetic coupling with the Fe atoms. The 4f-3d exchange interaction has an important influence on the density of states of Fe near the Fermi level. PrFe3N and NdFe3N with a tetragonal structure exhibit giant magnetic anisotropy energy larger than 5 meV/atom. The magnetic anisotropy depends on the distribution of partial states of d or f orbital near the Fermi level. As Eu substitutes Fe in Fe4N, the magnetic moment of Eu3FeN even exceeds 23 μB. Our theoretical predictions point out the possibilities of tuning the magnetism and magnetic anisotropy of Fe4N upon RE doping.

Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam

NASA Astrophysics Data System (ADS)

Uedono, A.; Ishibashi, S.; Tenjinbayashi, K.; Tsutsui, T.; Nakahara, K.; Takamizu, D.; Chichibu, S. F.

2012-01-01

Vacancy-type defects in Mg-doped GaN grown by metalorganic vapor phase epitaxy were probed using a monoenergetic positron beam. For a sample fabricated with a high H2-flow rate, before post-growth annealing the major defect species detected by positrons was identified as vacancy-clusters. Evidence suggested that other donor-type defects such as nitrogen vacancies also existed. The defects increased the Fermi level position, and enhanced the diffusion of positrons toward the surface. The annihilation of positrons at the top surface was suppressed by Mg-doping. This was attributed to the introduction of a subsurface layer (<6 nm) with a low defect concentration, where the Fermi level position was considered to decrease due to partial activation of Mg. For samples after annealing, the trapping of positrons by residual vacancy-type defects was observed, and the sample crystal quality was found to depend on that before annealing.

Surface effects in the unitary Fermi gas

NASA Astrophysics Data System (ADS)

Salasnich, L.; Ancilotto, F.; Toigo, F.

2010-01-01

We study the extended Thomas-Fermi (ETF) density functional of the superfluid unitary Fermi gas. This functional includes a gradient term which is essential to describe accurately the surface effects of the system, in particular with a small number of atoms, where the Thomas-Fermi (local density) approximation fails. We find that our ETF functional gives density profiles which are in good agreement with recent Monte Carlo results and also with a more sophisticated superfluid density functional based on Bogoliubov-de Gennes equations. In addition, by using extended hydrodynamics equations of superfluids, we calculate the frequencies of collective surface oscillations of the unitary Fermi gas, showing that quadrupole and octupole modes strongly depend on the number of trapped atoms.

Effects of Excess Carriers on Charged Defect Concentrations in Wide Bandgap Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alberi, Kirstin M; Scarpulla, Michael A.

Unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation enthalpy of a charged defect depends linearly on the Fermi level, doping limits can be especially pronounced in wide bandgap semiconductors where the Fermi level can vary substantially. Introduction of non-equilibrium carrier concentrations during growth or processing alters the chemical potentials of band carriers and allows populations of charged defects to be modified in ways impossible at thermal equilibrium. We demonstrate that in the presence of excess carriers, the rates of carrier capture and emission involving a defect charge transitionmore » level determine the admixture of electron and hole quasi-Fermi levels involved in the formation enthalpy of non-zero charge defect states. To understand the range of possible responses, we investigate the behavior of a single donor-like defect as functions of extrinsic doping and charge transition level energy. We find that that excess carriers will increase the formation enthalpy of compensating defects for most values of the charge transition level in the bandgap. Thus, it may be possible to use non-equilibrium carrier concentrations to overcome limitations on doping imposed by native defects. Cases also exist in which the concentration of defects with the same charge polarity as the majority dopant is either left unchanged or actually increases. This surprising effect arises when emission rates are suppressed relative to the capture rates and is most pronounced in wide bandgap semiconductors. We provide guidelines for carrying out experimental tests of this model.« less

Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors

NASA Astrophysics Data System (ADS)

Alberi, Kirstin; Scarpulla, Michael A.

2018-05-01

Unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation enthalpy of a charged defect depends linearly on the Fermi level, doping limits can be especially pronounced in wide bandgap semiconductors where the Fermi level can vary substantially. Introduction of non-equilibrium carrier concentrations during growth or processing alters the chemical potentials of band carriers and allows populations of charged defects to be modified in ways impossible at thermal equilibrium. We demonstrate that in the presence of excess carriers, the rates of carrier capture and emission involving a defect charge transition level determine the admixture of electron and hole quasi-Fermi levels involved in the formation enthalpy of non-zero charge defect states. To understand the range of possible responses, we investigate the behavior of a single donor-like defect as functions of extrinsic doping and charge transition level energy. We find that that excess carriers will increase the formation enthalpy of compensating defects for most values of the charge transition level in the bandgap. Thus, it may be possible to use non-equilibrium carrier concentrations to overcome limitations on doping imposed by native defects. Cases also exist in which the concentration of defects with the same charge polarity as the majority dopant is either left unchanged or actually increases. This surprising effect arises when emission rates are suppressed relative to the capture rates and is most pronounced in wide bandgap semiconductors. We provide guidelines for carrying out experimental tests of this model.

Time-dependent Models for Blazar Emission with the Second-order Fermi Acceleration

NASA Astrophysics Data System (ADS)

Asano, Katsuaki; Takahara, Fumio; Kusunose, Masaaki; Toma, Kenji; Kakuwa, Jun

2014-01-01

The second-order Fermi acceleration (Fermi-II) driven by turbulence may be responsible for the electron acceleration in blazar jets. We test this model with time-dependent simulations. The hard electron spectrum predicted by the Fermi-II process agrees with the hard photon spectrum of 1ES 1101-232. For other blazars that show softer spectra, the Fermi-II model requires radial evolution of the electron injection rate and/or diffusion coefficient in the outflow. Such evolutions can yield a curved electron spectrum, which can reproduce the synchrotron spectrum of Mrk 421 from the radio to the X-ray regime. The photon spectrum in the GeV energy range of Mrk 421 is hard to fit with a synchrotron self-Compton model. However, if we introduce an external radio photon field with a luminosity of 4.9 × 1038 erg s-1, GeV photons are successfully produced via inverse Compton scattering. The temporal variability of the diffusion coefficient or injection rate causes flare emission. The observed synchronicity of X-ray and TeV flares implies a decrease of the magnetic field in the flaring source region.

Quasiparticle energy bands and Fermi surfaces of monolayer NbSe2

NASA Astrophysics Data System (ADS)

Kim, Sejoong; Son, Young-Woo

2017-10-01

A quasiparticle band structure of a single layer 2 H -NbSe2 is reported by using first-principles G W calculation. We show that a self-energy correction increases the width of a partially occupied band and alters its Fermi surface shape when comparing those using conventional mean-field calculation methods. Owing to a broken inversion symmetry in the trigonal prismatic single layer structure, the spin-orbit interaction is included and its impact on the Fermi surface and quasiparticle energy bands are discussed. We also calculate the doping dependent static susceptibilities from the band structures obtained by the mean-field calculation as well as G W calculation with and without spin-orbit interactions. A complete tight-binding model is constructed within the three-band third nearest neighbor hoppings and is shown to reproduce our G W quasiparticle energy bands and Fermi surface very well. Considering variations of the Fermi surface shapes depending on self-energy corrections and spin-orbit interactions, we discuss the formations of charge density wave (CDW) with different dielectric environments and their implications on recent controversial experimental results on CDW transition temperatures.

Hole Fermi surface in Bi2Se3 probed by quantum oscillations

NASA Astrophysics Data System (ADS)

Piot, B. A.; Desrat, W.; Maude, D. K.; Orlita, M.; Potemski, M.; Martinez, G.; Hor, Y. S.

2016-04-01

Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi2Se3 crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between 0∘ and 90∘, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross sections down to 24 meV. There is therefore no signature of a camelback in the valence band of our bulk samples, in accordance with the direct band gap predicted by G W calculations.

Spin polarized first principles study of Mn doped gallium nitride monolayer nanosheet

NASA Astrophysics Data System (ADS)

Sharma, Venus; Kaur, Sumandeep; Srivastava, Sunita; Kumar, Tankeshwar

2017-05-01

The structural, electronic and magnetic properties of gallium nitride nanosheet (GaNs) doped with Mn atoms have been studied using spin polarized density functional theory. The binding energy per atom, Energy Band gap, Fermi energy, magnetic moment, electric dipole moment have been found. The doped nanosheet is found to be more stable than pure GaN monolayer nanosheet. Adsorption of Mn atom has been done at four different sites on GaNs which affects the fermi level position. It is found that depending on the doping site, Mn can behave both like p-type semiconductor and also as n-type semiconductor. Also, it is ascertained that Mn doped GaNs (GaNs-Mn) exhibits ferromagnetic behavior.

Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kempisty, Paweł; Krukowski, Stanisław; Interdisciplinary Centre for Materials Modelling, Warsaw University, Pawińskiego 5a, 02-106 Warsaw

Adsorption of ammonia at NH{sub 3}/NH{sub 2}/H-covered GaN(0001) surface was analyzed using results of ab initio calculations. The whole configuration space of partially NH{sub 3}/NH{sub 2}/H-covered GaN(0001) surface was divided into zones of differently pinned Fermi level: at the Ga broken bond state for dominantly bare surface (region I), at the valence band maximum (VBM) for NH{sub 2} and H-covered surface (region II), and at the conduction band minimum (CBM) for NH{sub 3}-covered surface (region III). The electron counting rule (ECR) extension was formulated for the case of adsorbed molecules. The extensive ab intio calculations show the validity of themore » ECR in case of all mixed H-NH{sub 2}-NH{sub 3} coverages for the determination of the borders between the three regions. The adsorption was analyzed using the recently identified dependence of the adsorption energy on the charge transfer at the surface. For region I ammonia adsorbs dissociatively, disintegrating into a H adatom and a HN{sub 2} radical for a large fraction of vacant sites, while for region II adsorption of ammonia is molecular. The dissociative adsorption energy strongly depends on the Fermi level at the surface (pinned) and in the bulk (unpinned) while the molecular adsorption energy is determined by bonding to surface only, in accordance to the recently published theory. Adsorption of Ammonia in region III (Fermi level pinned at CBM) leads to an unstable configuration both molecular and dissociative, which is explained by the fact that broken Ga-bonds are doubly occupied by electrons. The adsorbing ammonia brings 8 electrons to the surface, necessitating the transfer of these two electrons from the Ga broken bond state to the Fermi level. This is an energetically costly process. Adsorption of ammonia at H-covered site leads to the creation of a NH{sub 2} radical at the surface and escape of H{sub 2} molecule. The process energy is close to 0.12 eV, thus not large, but the direct inverse process is not possible due to the escape of the hydrogen molecule.« less

Electrostatic interactions between ions near Thomas-Fermi substrates and the surface energy of ionic crystals at imperfect metals.

PubMed

Kaiser, V; Comtet, J; Niguès, A; Siria, A; Coasne, B; Bocquet, L

2017-07-01

The electrostatic interaction between two charged particles is strongly modified in the vicinity of a metal. This situation is usually accounted for by the celebrated image charges approach, which was further extended to account for the electronic screening properties of the metal at the level of the Thomas-Fermi description. In this paper we build upon a previous approach [M. A. Vorotyntsev and A. A. Kornyshev, Zh. Eksp. Teor. Fiz., 1980, 78(3), 1008-1019] and successive works to calculate the 1-body and 2-body electrostatic energy of ions near a metal in terms of the Thomas-Fermi screening length. We propose workable approximations suitable for molecular simulations of ionic systems close to metallic walls. Furthermore, we use this framework to calculate analytically the electrostatic contribution to the surface energy of a one dimensional crystal at a metallic wall and its dependence on the Thomas-Fermi screening length. These calculations provide a simple interpretation for the surface energy in terms of image charges, which allows for an estimation of the interfacial properties in more complex situations of a disordered ionic liquid close to a metal surface. The counter-intuitive outcome is that electronic screening, as characterized by a molecular Thomas-Fermi length l TF , profoundly affects the wetting of ionic systems close to a metal, in line with the recent experimental observation of capillary freezing of ionic liquids in metallic confinement.

Fermi arcs vs. fermi pockets in electron-doped perovskite iridates

DOE PAGES

He, Junfeng; Hafiz, H.; Mion, Thomas R.; ...

2015-02-23

We report on an angle resolved photoemission (ARPES) study of bulk electron-doped perovskite iridate, (Sr 1-xLa x)₃Ir₂O₇. Fermi surface pockets are observed with a total electron count in keeping with that expected from La substitution. Depending on the energy and polarization of the incident photons, these pockets show up in the form of disconnected “Fermi arcs”, reminiscent of those reported recently in surface electron-doped Sr₂IrO₄. Our observed spectral variation is consistent with the coexistence of an electronic supermodulation with structural distortion in the system.

Magnetothermoelectric properties of layered structures for ion impurity scattering

NASA Astrophysics Data System (ADS)

Figarova, S. R.; Huseynov, H. I.; Figarov, V. R.

2018-05-01

In the paper, longitudinal and transverse thermoelectric powers are considered in a magnetic field parallel to the layer plane for scattering of charge carriers by weakly screened impurity ions. Based on the semiclassical approximation, it is obtained that, depending on the position of the Fermi level relative to the miniband top and superlattice period, the thermoelectric power can change sign and amplify.

Characteristics of dielectric properties and conduction mechanism of TlInS2:Cu single crystals

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.; El-Zaidia, E. F. M.

2013-12-01

Single crystals of TlInS2:Cu were grown by the modified Bridgman method. The dielectric behavior of TlInS2:Cu was investigated using the impedance spectroscopy technique. The real (ε1), imaginary (ε2) parts of complex dielectric permittivity and ac conductivity were measured in the frequency range (42-2×105) Hz with a variation of temperature in the range from 291 K to 483 K. The impedance data were presented in Nyquist diagrams for different temperatures. The frequency dependence of σtot (ω) follows the Jonscher's universal dynamic law with the relation σtot (ω)=σdc+Aωs, (where s is the frequency exponent). The mechanism of the ac charge transport across the layers of TlInS2:Cu single crystals was referred to the hopping over localized states near the Fermi level. The examined system exhibits temperature dependence of σac (ω), which showed a linear increase with the increase in temperature at different frequencies. Some parameters were calculated as: the density of localized states near the Fermi level, NF, the average time of charge carrier hopping between localized states, τ, and the average hopping distance, R.

Engineering frequency-dependent superfluidity in Bose-Fermi mixtures

NASA Astrophysics Data System (ADS)

Arzamasovs, Maksims; Liu, Bo

2018-04-01

Unconventional superconductivity and superfluidity are among the most exciting and fascinating quantum phenomena in condensed-matter physics. Usually such states are characterized by nontrivial spin or spatial symmetry of the pairing order parameter, such as "spin triplet" or "p wave." However, besides spin and spatial dependence the order parameter may have unconventional frequency dependence which is also permitted by Fermi-Dirac statistics. Odd-frequency fermionic pairing is an exciting paradigm when discussing exotic superfluidity or superconductivity and is yet to be realized in experiments. In this paper we propose a symmetry-based method of controlling frequency dependence of the pairing order parameter via manipulating the inversion symmetry of the system. First, a toy model is introduced to illustrate that frequency dependence of the order parameter can be achieved through our proposed approach. Second, by taking advantage of recent rapid developments in producing spin-orbit-coupled dispersions in ultracold gases, we propose a Bose-Fermi mixture to realize such frequency-dependent superfluid. The key idea is introducing the frequency-dependent attraction between fermions mediated by Bogoliubov phonons with asymmetric dispersion. Our proposal should pave an alternative way for exploring frequency-dependent superfluids with cold atoms.

Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

NASA Astrophysics Data System (ADS)

Debehets, J.; Homm, P.; Menghini, M.; Chambers, S. A.; Marchiori, C.; Heyns, M.; Locquet, J. P.; Seo, J. W.

2018-05-01

In this paper, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.

Applications of Fermi-Lowdin-Orbital Self-Interaction Correction Scheme to Organic Systems

NASA Astrophysics Data System (ADS)

Baruah, Tunna; Kao, Der-You; Yamamoto, Yoh

Recent progress in treating the self-interaction errors by means of local, Lowdin-orthogonalized Fermi Orbitals offers a promising route to study the effect of self-interaction errors in the electronic structure of molecules. The Fermi orbitals depend on the location of the electronic positions, called as Fermi orbital descriptors. One advantage of using the Fermi orbitals is that the corrected Hamiltonian is unitarily invariant. Minimization of the corrected energies leads to an optimized set of centroid positions. Here we discuss the applications of this method to various systems from constituent atoms to several medium size molecules such as Mg-porphyrin, C60, pentacene etc. The applications to the ionic systems will also be discussed. De-SC0002168, NSF-DMR 125302.

Optical Response of Sr2RuO4 Reveals Universal Fermi-Liquid Scaling and Quasiparticles Beyond Landau Theory

NASA Astrophysics Data System (ADS)

Stricker, D.; Mravlje, J.; Berthod, C.; Fittipaldi, R.; Vecchione, A.; Georges, A.; van der Marel, D.

2014-08-01

We report optical measurements demonstrating that the low-energy relaxation rate (1/τ) of the conduction electrons in Sr2RuO4 obeys scaling relations for its frequency (ω) and temperature (T) dependence in accordance with Fermi-liquid theory. In the thermal relaxation regime, 1/τ∝(ℏω)2+(pπkBT)2 with p=2, and ω/T scaling applies. Many-body electronic structure calculations using dynamical mean-field theory confirm the low-energy Fermi-liquid scaling and provide quantitative understanding of the deviations from Fermi-liquid behavior at higher energy and temperature. The excess optical spectral weight in this regime provides evidence for strongly dispersing "resilient" quasiparticle excitations above the Fermi energy.

Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

NASA Astrophysics Data System (ADS)

Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

2018-03-01

We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures

NASA Astrophysics Data System (ADS)

Kudrawiec, R.; Nair, H. P.; Latkowska, M.; Misiewicz, J.; Bank, S. R.; Walukiewicz, W.

2012-12-01

Contactless electroreflectance (CER) has been applied to study the Fermi-level position on GaSb surface in n-type and p-type GaSb Van Hoof structures. CER resonances, followed by strong Franz-Keldysh oscillation of various periods, were clearly observed for two series of structures. This period was much wider (i.e., the built-in electric field was much larger) for n-type structures, indicating that the GaSb surface Fermi level pinning position is closer to the valence-band than the conduction-band. From analysis of the built-in electric fields in undoped GaSb layers, it was concluded that on GaSb surface the Fermi-level is located ˜0.2 eV above the valence band.

Thermoelectricity in fullerene-metal heterojunctions.

PubMed

Yee, Shannon K; Malen, Jonathan A; Majumdar, Arun; Segalman, Rachel A

2011-10-12

Thermoelectricty in heterojunctions, where a single-molecule is trapped between metal electrodes, has been used to understand transport properties at organic-inorganic interfaces. (1) The transport in these systems is highly dependent on the energy level alignment between the molecular orbitals and the Fermi level (or work function) of the metal contacts. To date, the majority of single-molecule measurements have focused on simple small molecules where transport is dominated through the highest occupied molecular orbital. (2, 3) In these systems, energy level alignment is limited by the absence of electrode materials with low Fermi levels (i.e., large work functions). Alternatively, more controllable alignment between molecular orbitals and the Fermi level can be achieved with molecules whose transport is dominated by the lowest unoccupied molecular orbital (LUMO) because of readily available metals with lower work functions. Herein, we report molecular junction thermoelectric measurements of fullerene molecules (i.e., C(60), PCBM, and C(70)) trapped between metallic electrodes (i.e., Pt, Au, Ag). Fullerene junctions demonstrate the first strongly n-type molecular thermopower corresponding to transport through the LUMO, and the highest measured magnitude of molecular thermopower to date. While the electronic conductance of fullerenes is highly variable, due to fullerene's variable bonding geometries with the electrodes, the thermopower shows predictable trends based on the alignment of the LUMO with the work function of the electrodes. Both the magnitude and trend of the thermopower suggest that heterostructuring organic and inorganic materials at the nanoscale can further enhance thermoelectric performance, therein providing a new pathway for designing thermoelectric materials.

Extended Thomas-Fermi density functional for the unitary Fermi gas

NASA Astrophysics Data System (ADS)

Salasnich, Luca; Toigo, Flavio

2008-11-01

We determine the energy density ξ(3/5)nɛF and the gradient correction λℏ2(∇n)2/(8mn) of the extended Thomas-Fermi (ETF) density functional, where n is the number density and ɛF is the Fermi energy, for a trapped two-component Fermi gas with infinite scattering length (unitary Fermi gas) on the basis of recent diffusion Monte Carlo (DMC) calculations [Phys. Rev. Lett. 99, 233201 (2007)]. In particular we find that ξ=0.455 and λ=0.13 give the best fit of the DMC data with an even number N of particles. We also study the odd-even splitting γN1/9ℏω of the ground-state energy for the unitary gas in a harmonic trap of frequency ω determining the constant γ . Finally we investigate the effect of the gradient term in the time-dependent ETF model by introducing generalized Galilei-invariant hydrodynamics equations.

Seebeck effect on a weak link between Fermi and non-Fermi liquids

NASA Astrophysics Data System (ADS)

Nguyen, T. K. T.; Kiselev, M. N.

2018-02-01

We propose a model describing Seebeck effect on a weak link between two quantum systems with fine-tunable ground states of Fermi and non-Fermi liquid origin. The experimental realization of the model can be achieved by utilizing the quantum devices operating in the integer quantum Hall regime [Z. Iftikhar et al., Nature (London) 526, 233 (2015), 10.1038/nature15384] designed for detection of macroscopic quantum charged states in multichannel Kondo systems. We present a theory of thermoelectric transport through hybrid quantum devices constructed from quantum-dot-quantum-point-contact building blocks. We discuss pronounced effects in the temperature and gate voltage dependence of thermoelectric power associated with a competition between Fermi and non-Fermi liquid behaviors. High controllability of the device allows to fine tune the system to different regimes described by multichannel and multi-impurity Kondo models.

Quasiparticles and Fermi liquid behaviour in an organic metal

PubMed Central

Kiss, T.; Chainani, A.; Yamamoto, H.M.; Miyazaki, T.; Akimoto, T.; Shimojima, T.; Ishizaka, K.; Watanabe, S.; Chen, C.-T.; Fukaya, A.; Kato, R.; Shin, S.

2012-01-01

Many organic metals display exotic properties such as superconductivity, spin-charge separation and so on and have been described as quasi-one-dimensional Luttinger liquids. However, a genuine Fermi liquid behaviour with quasiparticles and Fermi surfaces have not been reported to date for any organic metal. Here, we report the experimental Fermi surface and band structure of an organic metal (BEDT-TTF)3Br(pBIB) obtained using angle-resolved photoelectron spectroscopy, and show its consistency with first-principles band structure calculations. Our results reveal a quasiparticle renormalization at low energy scales (effective mass m*=1.9 me) and ω2 dependence of the imaginary part of the self energy, limited by a kink at ~50 meV arising from coupling to molecular vibrations. The study unambiguously proves that (BEDT-TTF)3Br(pBIB) is a quasi-2D organic Fermi liquid with a Fermi surface consistent with Shubnikov-de Haas results. PMID:23011143

Unified mechanism of the surface Fermi level pinning in III-As nanowires.

PubMed

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Cirlin, George E; Reznik, Rodion R; Smirnov, Alexander N; Kirilenko, Demid A; Davydov, Valery Yu; Berkovits, Vladimir L

2018-08-03

Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al x Ga 1-x As (0 ≤ x ≤ 0.45) and Ga x In 1-x As (0 ≤ x ≤ 1) alloys is pinned at the same position of 4.8 ± 0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al x Ga 1-x As and Ga x In 1-x As nanowires leads to the accumulation of an excess of arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.

75 FR 24755 - DTE ENERGY; Enrico Fermi Atomic Power Plant Unit 1; Exemption From Certain Low-Level Waste...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-05-05

... NUCLEAR REGULATORY COMMISSION [Docket No. 50-16; NRC-2009-0073] DTE ENERGY; Enrico Fermi Atomic... License No. DPR-9 issued for Enrico Fermi Atomic Power Plant, Unit 1 (Fermi-1), located in Monroe County... undue hazard to life or property. There are no provisions in the Atomic Energy Act (or in any other...

Time-dependent models for blazar emission with the second-order Fermi acceleration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asano, Katsuaki; Takahara, Fumio; Toma, Kenji

The second-order Fermi acceleration (Fermi-II) driven by turbulence may be responsible for the electron acceleration in blazar jets. We test this model with time-dependent simulations. The hard electron spectrum predicted by the Fermi-II process agrees with the hard photon spectrum of 1ES 1101–232. For other blazars that show softer spectra, the Fermi-II model requires radial evolution of the electron injection rate and/or diffusion coefficient in the outflow. Such evolutions can yield a curved electron spectrum, which can reproduce the synchrotron spectrum of Mrk 421 from the radio to the X-ray regime. The photon spectrum in the GeV energy range ofmore » Mrk 421 is hard to fit with a synchrotron self-Compton model. However, if we introduce an external radio photon field with a luminosity of 4.9 × 10{sup 38} erg s{sup –1}, GeV photons are successfully produced via inverse Compton scattering. The temporal variability of the diffusion coefficient or injection rate causes flare emission. The observed synchronicity of X-ray and TeV flares implies a decrease of the magnetic field in the flaring source region.« less

A position-dependent mass model for the Thomas–Fermi potential: Exact solvability and relation to δ-doped semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze-Halberg, Axel, E-mail: xbataxel@gmail.com; García-Ravelo, Jesús; Pacheco-García, Christian

We consider the Schrödinger equation in the Thomas–Fermi field, a model that has been used for describing electron systems in δ-doped semiconductors. It is shown that the problem becomes exactly-solvable if a particular effective (position-dependent) mass distribution is incorporated. Orthogonal sets of normalizable bound state solutions are constructed in explicit form, and the associated energies are determined. We compare our results with the corresponding findings on the constant-mass problem discussed by Ioriatti (1990) [13]. -- Highlights: ► We introduce an exactly solvable, position-dependent mass model for the Thomas–Fermi potential. ► Orthogonal sets of solutions to our model are constructed inmore » closed form. ► Relation to delta-doped semiconductors is discussed. ► Explicit subband bottom energies are calculated and compared to results obtained in a previous study.« less

Diffuse Cosmic Rays Shining in the Galactic Center: A Novel Interpretation of H.E.S.S. and Fermi-LAT γ-Ray Data.

PubMed

Gaggero, D; Grasso, D; Marinelli, A; Taoso, M; Urbano, A

2017-07-21

We present a novel interpretation of the γ-ray diffuse emission measured by Fermi-LAT and H.E.S.S. in the Galactic center (GC) region and the Galactic ridge (GR). In the first part we perform a data-driven analysis based on PASS8 Fermi-LAT data: We extend down to a few GeV the spectra measured by H.E.S.S. and infer the primary cosmic-ray (CR) radial distribution between 0.1 and 3 TeV. In the second part we adopt a CR transport model based on a position-dependent diffusion coefficient. Such behavior reproduces the radial dependence of the CR spectral index recently inferred from the Fermi-LAT observations. We find that the bulk of the GR emission can be naturally explained by the interaction of the diffuse steady-state Galactic CR sea with the gas present in the central molecular zone. Although we confirm the presence of a residual radial-dependent emission associated with a central source, the relevance of the large-scale diffuse component prevents to claim a solid evidence of GC pevatrons.

Effects of disordered Ru substitution in BaFe2As2: possible realization of superdiffusion in real materials.

PubMed

Wang, Limin; Berlijn, Tom; Wang, Yan; Lin, Chia-Hui; Hirschfeld, P J; Ku, Wei

2013-01-18

An unexpected insensitivity of the Fermi surface to impurity scattering is found in Ru substituted BaFe(2)As(2) from first-principles theory, offering a natural explanation of the unusual resilience of transport and superconductivity to a high level of disordered substitution in this material. This robustness is shown to originate from a coherent interference of correlated on-site and intersite impurity scattering, similar in spirit to the microscopic mechanism of superdiffusion in one dimension. Our result also demonstrates a strong substitution dependence of the Fermi surface and carrier concentration and provides a resolution to current discrepancies in recent photoelectron spectroscopy. These effects offer a natural explanation of the diminishing long-range magnetic, orbital, and superconducting orders with high substitution.

Fermi wave vector for the partially spin-polarized composite-fermion Fermi sea

NASA Astrophysics Data System (ADS)

Balram, Ajit C.; Jain, J. K.

2017-12-01

The fully spin-polarized composite-fermion (CF) Fermi sea at the half-filled lowest Landau level has a Fermi wave vector kF*=√{4 π ρe } , where ρe is the density of electrons or composite fermions, supporting the notion that the interaction between composite fermions can be treated perturbatively. Away from ν =1 /2 , the area is seen to be consistent with kF*=√{4 π ρe } for ν <1 /2 but kF*=√{4 π ρh } for ν >1 /2 , where ρh is the density of holes in the lowest Landau level. This result is consistent with particle-hole symmetry in the lowest Landau level. We investigate in this article the Fermi wave vector of the spin-singlet CF Fermi sea (CFFS) at ν =1 /2 , for which particle-hole symmetry is not a consideration. Using the microscopic CF theory, we find that for the spin-singlet CFFS the Fermi wave vectors for up- and down-spin CFFSs at ν =1 /2 are consistent with kF*↑,↓=√{4 π ρe↑,↓ } , where ρe↑=ρe↓=ρe/2 , which implies that the residual interactions between composite fermions do not cause a nonperturbative correction for spin-singlet CFFS either. Our results suggest the natural conjecture that for arbitrary spin polarization the CF Fermi wave vectors are given by kF*↑=√{4 π ρe↑ } and kF*↓=√{4 π ρe↓ } .

3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

NASA Astrophysics Data System (ADS)

Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

2017-09-01

The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

Number of holes contained within the Fermi surface volume in underdoped high-temperature superconductors

DOE PAGES

Harrison, Neil

2016-08-16

Here, we provide a potential solution to the longstanding problem relating Fermi surface reconstruction to the number of holes contained within the Fermi surface volume in underdoped high T c superconductors. On considering uniaxial and biaxial charge-density wave order, we show that there exists a relationship between the ordering wave vector, the hole doping, and the cross-sectional area of the reconstructed Fermi surface whose precise form depends on the volume of the starting Fermi surface. We consider a “large” starting Fermi surface comprising 1+p hole carriers, as predicted by band structure calculations, and a “small” starting Fermi surface comprising pmore » hole carriers, as proposed in models in which the Coulomb repulsion remains the dominant energy. Using the reconstructed Fermi surface cross-sectional area obtained in quantum oscillation experiments in YBa 2Cu 3O 6+x and HgBa 2CuO 4+x and the established methods for estimating the chemical hole doping, we find the ordering vectors obtained from x-ray scattering measurements to show a close correspondence with those expected for the small starting Fermi surface. We therefore show the quantum oscillation frequency and charge-density wave vectors provide accurate estimates for the number of holes contributing to the Fermi surface volume in the pseudogap regime.« less

Number of holes contained within the Fermi surface volume in underdoped high-temperature superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harrison, Neil

Here, we provide a potential solution to the longstanding problem relating Fermi surface reconstruction to the number of holes contained within the Fermi surface volume in underdoped high T c superconductors. On considering uniaxial and biaxial charge-density wave order, we show that there exists a relationship between the ordering wave vector, the hole doping, and the cross-sectional area of the reconstructed Fermi surface whose precise form depends on the volume of the starting Fermi surface. We consider a “large” starting Fermi surface comprising 1+p hole carriers, as predicted by band structure calculations, and a “small” starting Fermi surface comprising pmore » hole carriers, as proposed in models in which the Coulomb repulsion remains the dominant energy. Using the reconstructed Fermi surface cross-sectional area obtained in quantum oscillation experiments in YBa 2Cu 3O 6+x and HgBa 2CuO 4+x and the established methods for estimating the chemical hole doping, we find the ordering vectors obtained from x-ray scattering measurements to show a close correspondence with those expected for the small starting Fermi surface. We therefore show the quantum oscillation frequency and charge-density wave vectors provide accurate estimates for the number of holes contributing to the Fermi surface volume in the pseudogap regime.« less

Electronic fingerprints of DNA bases on graphene.

PubMed

Ahmed, Towfiq; Kilina, Svetlana; Das, Tanmoy; Haraldsen, Jason T; Rehr, John J; Balatsky, Alexander V

2012-02-08

We calculate the electronic local density of states (LDOS) of DNA nucleotide bases (A,C,G,T), deposited on graphene. We observe significant base-dependent features in the LDOS in an energy range within a few electronvolts of the Fermi level. These features can serve as electronic fingerprints for the identification of individual bases in scanning tunneling spectroscopy (STS) experiments that perform image and site dependent spectroscopy on biomolecules. Thus the fingerprints of DNA-graphene hybrid structures may provide an alternative route to DNA sequencing using STS. © 2012 American Chemical Society

Chemical contrast in STM imaging of transition metal aluminides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duguet, T.; Thiel, Patricia A.

2012-08-01

The present manuscript reviews recent scanning tunnelling microscopy (STM) studies of transition metal (TM) aluminide surfaces. It provides a general perspective on the contrast between Al atoms and TM atoms in STM imaging. A general trend is the much stronger bias dependence of TM atoms, or TM-rich regions of the surface. This dependence can be attenuated by the local chemical arrangements and environments. Al atoms can show a stronger bias dependence when their chemical environment, such as their immediate subsurface, is populated with TM. All this is well explained in light of combined results of STM and both theoretical andmore » experimental electronic and crystallographic structure determinations. Since STM probes the Fermi surface, the electronic structure in the vicinity of the Fermi level (EF) is essential for understanding contrast and bias dependence. Hence, partial density of states provides information about the TM d band position and width, s–p–d hybridization or interactions, or charge transfer between constituent elements. In addition, recent developments in STM image simulations are very interesting for elucidating chemical contrast at Al–TM alloy surfaces, and allow direct atomic identification, when the surface does not show too much disorder. Overall, we show that chemically-specific imaging is often possible at these surfaces.« less

Enhanced electron emission from coated metal targets: Effect of surface thickness on performance

NASA Astrophysics Data System (ADS)

Madas, Saibabu; Mishra, S. K.; Upadhyay Kahaly, Mousumi

2018-03-01

In this work, we establish an analytical formalism to address the temperature dependent electron emission from a metallic target with thin coating, operating at a finite temperature. Taking into account three dimensional parabolic energy dispersion for the target (base) material and suitable thickness dependent energy dispersion for the coating layer, Fermi Dirac statistics of electron energy distribution and Fowler's mechanism of the electron emission, we discuss the dependence of the emission flux on the physical properties such as the Fermi level, work function, thickness of the coating material, and operating temperature. Our systematic estimation of how the thickness of coating affects the emission current demonstrates superior emission characteristics for thin coating layer at high temperature (above 1000 K), whereas in low temperature regime, a better response is expected from thicker coating layer. This underlying fundamental behavior appears to be essentially identical for all configurations when work function of the coating layer is lower than that of the bulk target work function. The analysis and predictions could be useful in designing new coated materials with suitable thickness for applications in the field of thin film devices and field emitters.

Time-Dependent Thomas-Fermi Approach for Electron Dynamics in Metal Clusters

NASA Astrophysics Data System (ADS)

Domps, A.; Reinhard, P.-G.; Suraud, E.

1998-06-01

We propose a time-dependent Thomas-Fermi approach to the (nonlinear) dynamics of many-fermion systems. The approach relies on a hydrodynamical picture describing the system in terms of collective flow. We investigate in particular an application to electron dynamics in metal clusters. We make extensive comparisons with fully fledged quantal dynamical calculations and find overall good agreement. The approach thus provides a reliable and inexpensive scheme to study the electronic response of large metal clusters.

Calculation of the X-Ray emission K and L 2,3 bands of metallic magnesium and aluminum with allowance for multielectron effects

NASA Astrophysics Data System (ADS)

Ovcharenko, R. E.; Tupitsyn, I. I.; Savinov, E. P.; Voloshina, E. N.; Dedkov, Yu. S.; Shulakov, A. S.

2014-01-01

A procedure is proposed to calculate the shape of the characteristic X-ray emission bands of metals with allowance for multielectron effects. The effects of the dynamic screening of a core vacancy by conduction electrons and the Auger effect in the valence band are taken into account. The dynamic screening of a core vacancy, which is known to be called the MND (Mahan-Nozeieres-De Dominics) effect, is taken into account by an ab initio band calculation of crystals using the PAW (projected augmented waves) method. The Auger effect is taken into account by a semiempirical method using the approximation of a quadratic dependence of the level width in the valence band on the difference between the level energy and the Fermi energy. The proposed calculation procedure is used to describe the X-ray emission K and L 2,3 bands of metallic magnesium and aluminum crystals. The calculated spectra agree well with the experimental bands both near the Fermi level and in the low-energy part of the spectra in all cases.

The overdoped region of the high Tc superconducting Bi2212 revisited

NASA Astrophysics Data System (ADS)

Zaki, N.; Yang, H.-B.; Rameau, J. D.; Johnson, P. D.; Claus, H.; Hinks, D. G.

High-resolution angle-resolved photoemission (ARPES) is used to probe the temperature dependence of the gaps observed in the antinodal region of the Fermi surface (FS) in overdoped Bi2212. In particular we study samples with doping levels greater than 0.19, the latter having previously been determined to be the doping level associated with a Fermi surface reconstruction. Careful simulation of the measured ARPES spectra indicates that any gap observed in this region of the FS at these doping levels is a reflection of the range of superconducting gaps associated with inhomogeneities observed in STM studies of the same systems. With this observation we are able to reexamine the phase diagram associated with the Bi2212 system and discuss the origin of the pseudogap associated with the underdoped region. This work is supported in part by the Center for Emergent Superconductivity (CES), an EFRC funded by the U.S. DOE. The work is also supported in part by the U.S. DOE under Contract No. DE-AC02- 98CH10886 at BNL and Contract No. DE-AC02-06CH11357 at ANL.

Depletion region surface effects in electron beam induced current measurements.

PubMed

Haney, Paul M; Yoon, Heayoung P; Gaury, Benoit; Zhitenev, Nikolai B

2016-09-07

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the p - n junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.

Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

NASA Astrophysics Data System (ADS)

Bubel, S.; Chabinyc, M. L.

2013-06-01

The electronic density of states in metal oxide semiconductors like amorphous zinc oxide (a-ZnO) and its ternary and quaternary oxide alloys with indium, gallium, tin, or aluminum are different from amorphous silicon, or disordered materials such as pentacene, or P3HT. Many ZnO based semiconductors exhibit a steep decaying density of acceptor tail states (trap DOS) and a Fermi level (EF) close to the conduction band energy (EC). Considering thin film transistor (TFT) operation in accumulation mode, the quasi Fermi level for electrons (Eq) moves even closer to EC. Classic analytic TFT simulations use the simplification EC-EF> `several'kT and cannot reproduce exponential tail states with a characteristic energy smaller than 1/2 kT. We demonstrate an analytic model for tail and deep acceptor states, valid for all amorphous metal oxides and include the effect of trap assisted hopping instead of simpler percolation or mobility edge models, to account for the observed field dependent mobility.

Electronic structure and magnetic properties of quaternary Heusler alloy Co2CrGa1-xGex (x=0-1)

NASA Astrophysics Data System (ADS)

Seema, K.; Kumar, Ranjan

2015-03-01

The electronic structure of Co-based quaternary Heusler compounds Co2CrGa1-xGex (x=0.00, 0.25, 0.50, 0.75, 1.00) are calculated by first-principles density functional theory. The substitution of Ga by Ge leads to increase in the number of valence electrons. With increasing concentration of Ge, lattice constant decreases linearly whereas bulk modulus and total magnetic moment increases. This shows that the magnetic properties of the compound are dependent on electron concentration of main group element. The calculations show that the alloys with x=0.00, 0.25, 0.50 are not true half-metallic materials whereas alloy with x=0.75, 1.00 exhibit 100% spin polarization at the Fermi level. It shows that the Fermi level can be shifted within the energy-gap to achieve 100% spin polarization. The effect of volumetric and tetragonal strain on magnetic properties is also studied.

Observation of the spin-polarized surface state in a noncentrosymmetric superconductor BiPd

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neupane, Madhab; Alidoust, Nasser; Hosen, M. Mofazzel

Recently, noncentrosymmetric superconductor BiPd has attracted considerable research interest due to the possibility of hosting topological superconductivity. Here in this paper we report a systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES study of the normal state electronic and spin properties of BiPd. Our experimental results show the presence of a surface state at higher-binding energy with the location of Dirac point at around 700 meV below the Fermi level. The detailed photon energy, temperature-dependent and spin-resolved ARPES measurements complemented by our first-principles calculations demonstrate the existence of the spin-polarized surface states at high-binding energy. The absence of suchmore » spin-polarized surface states near the Fermi level negates the possibility of a topological superconducting behaviour on the surface. Our direct experimental observation of spin-polarized surface states in BiPd provides critical information that will guide the future search for topological superconductivity in noncentrosymmetric materials.« less

Observation of the spin-polarized surface state in a noncentrosymmetric superconductor BiPd

DOE PAGES

Neupane, Madhab; Alidoust, Nasser; Hosen, M. Mofazzel; ...

2016-11-07

Recently, noncentrosymmetric superconductor BiPd has attracted considerable research interest due to the possibility of hosting topological superconductivity. Here in this paper we report a systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES study of the normal state electronic and spin properties of BiPd. Our experimental results show the presence of a surface state at higher-binding energy with the location of Dirac point at around 700 meV below the Fermi level. The detailed photon energy, temperature-dependent and spin-resolved ARPES measurements complemented by our first-principles calculations demonstrate the existence of the spin-polarized surface states at high-binding energy. The absence of suchmore » spin-polarized surface states near the Fermi level negates the possibility of a topological superconducting behaviour on the surface. Our direct experimental observation of spin-polarized surface states in BiPd provides critical information that will guide the future search for topological superconductivity in noncentrosymmetric materials.« less

Fermi level pinning at epitaxial Si on GaAs(100) interfaces

NASA Astrophysics Data System (ADS)

Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

1991-12-01

GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

Fermi level pinning at the Ge(001) surface—A case for non-standard explanation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojtaszek, Mateusz; Zuzak, Rafal; Godlewski, Szymon

2015-11-14

To explore the origin of the Fermi level pinning in germanium, we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed. For samples with donors as majority dopants, the surface Fermi level appears close to the top of the valence band regardless of the surface structure. Surprisingly, for the passivated surface, it is located below the top of the valence band allowing scanning tunneling microscopy imaging within the band gap. We argue that the well known electronic mechanism behind band bending doesmore » not apply and a more complicated scenario involving ionic degrees of freedom is therefore necessary. Experimental techniques involve four point probe electric current measurements, scanning tunneling microscopy, and spectroscopy.« less

Spin fluctations and heavy fermions in the Kondo lattice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khaliullin, G.G.

1994-09-01

This paper studies the spectrum of the spin and electronic excitations of the Kondo lattice at low temperatures. To avoid unphysical states, the Mattis {open_quotes}drone{close_quotes}-fermion representation for localized spins is employed. First, the known Fermi liquid properties of a single impurity are examined. The behavior of the correlator between a localized spin and the electron spin density at large distances shows that the effective interaction between electrons on the Fermi level and low-energy localized spin fluctuations scales as {rho}{sup {minus}1}, where {rho} is the band-state density. This fact is developed into a renormalization of the band spectrum in a periodicmore » lattice. If the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between localized spins is much smaller than the Kondo fluctuation frequency {omega}{sub k}, the temperature of the crossover to the single-parameter Fermi liquid mode is determined by {omega}{sub k}. When the RKKY interaction becomes of order {omega}{sub k}, there is a new scale {omega}{sub sf}, the energy of the (antiferromagnetic) paramagnon mode, with {omega}{sub sf}{much_lt}{omega}{sub k}. Here the coherent Fermi liquid regime is realized only below a temperature T{sub coh} of order {omega}{sub sf}, while above T{sub coh} quasiparticle damping exhibits a linear temperature dependence. Finally, the nuclear-spin relaxation rate is calculated. 42 refs.« less

Anisotropic Fermi surface and quantum limit transport in high mobility three-dimensional Dirac semimetal Cd 3As 2

DOE PAGES

Zhao, Yanfei; Liu, Haiwen; Zhang, Chenglong; ...

2015-09-16

Three-dimensional (3D) topological Dirac semimetals have a linear dispersion in the 3D momentum space and are viewed as the 3D analogues of graphene. Here, we report angle dependent magnetotransport on the newly revealed Cd 3As 2 single crystals and clearly show how the Fermi surface evolves with crystallographic orientations. Remarkably, when the magnetic field lies in [112] or [44more » $$\\bar{1}$$] axis, magnetoresistance oscillations with only single period are present. However, the oscillation shows double periods when the field is applied along [1$$\\bar{1}$$0] direction. Moreover, aligning the magnetic field at certain directions also gives rise to double period oscillations. We attribute the observed anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surfaces with two nested anisotropic ellipsoids around the Dirac points. Additionally, a sub-millimeter mean free path at 6 K is found in Cd 3As 2 crystals, indicating ballistic transport in this material. By measuring the magnetoresistance up to 60 T, we reach the quantum limit (n = 1 Landau level) at about 43 T. Lastly, these results improve the knowledge of the Dirac semimetal material Cd 3As 2, and also pave the way for proposing new electronic applications based on 3D Dirac materials.« less

Kohn's theorem in a superfluid Fermi gas with a Feshbach resonance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohashi, Y.

2004-12-01

We investigate the dipole mode in a superfluid gas of Fermi atoms trapped in a harmonic potential. According to Kohn's theorem, the frequency of this collective mode is not affected by an interaction between the atoms and is always equal to the trap frequency. This remarkable property, however, does not necessarily hold in an approximate theory. We explicitly prove that the Hartree-Fock-Bogoliubov generalized random phase approximation (HFB-GRPA), including a coupling between fluctuations in the density and Cooper channels, is consistent with both Kohn's theorem as well as Goldstone's theorem. This proof can be immediately extended to the strong-coupling superfluid theorymore » developed by Nozieres and Schmitt-Rink (NSR), where the effect of superfluid fluctuations is included within the Gaussian level. As a result, the NSR-GRPA formalism can be used to study collective modes in the BCS-BEC crossover region in a manner which is consistent with Kohn's theorem. We also include the effect of a Feshbach resonance and a condensate of the associated molecular bound states. A detailed discussion is given of the unusual nature of the Kohn mode eigenfunctions in a Fermi superfluid, in the presence and absence of a Feshbach resonance. When the molecular bosons feel a different trap frequency from the Fermi atoms, the dipole frequency is shown to depend on the strength of effective interaction associated with the Feshbach resonance.« less

Impact of Many-Body Effects on Landau Levels in Graphene

NASA Astrophysics Data System (ADS)

Sonntag, J.; Reichardt, S.; Wirtz, L.; Beschoten, B.; Katsnelson, M. I.; Libisch, F.; Stampfer, C.

2018-05-01

We present magneto-Raman spectroscopy measurements on suspended graphene to investigate the charge carrier density-dependent electron-electron interaction in the presence of Landau levels. Utilizing gate-tunable magnetophonon resonances, we extract the charge carrier density dependence of the Landau level transition energies and the associated effective Fermi velocity vF. In contrast to the logarithmic divergence of vF at zero magnetic field, we find a piecewise linear scaling of vF as a function of the charge carrier density, due to a magnetic-field-induced suppression of the long-range Coulomb interaction. We quantitatively confirm our experimental findings by performing tight-binding calculations on the level of the Hartree-Fock approximation, which also allow us to estimate an excitonic binding energy of ≈6 meV contained in the experimentally extracted Landau level transitions energies.

Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Debehets, J.; Homm, P.; Menghini, M.

In this study, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-levelmore » pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH 4) 2S-solutions in an inert atmosphere (N 2-gas). Although the (NH 4) 2S-cleaning in N 2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH 4) 2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.« less

Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

DOE PAGES

Debehets, J.; Homm, P.; Menghini, M.; ...

2018-01-12

In this study, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-levelmore » pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH 4) 2S-solutions in an inert atmosphere (N 2-gas). Although the (NH 4) 2S-cleaning in N 2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH 4) 2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.« less

Dark lump excitations in superfluid Fermi gases

NASA Astrophysics Data System (ADS)

Xu, Yan-Xia; Duan, Wen-Shan

2012-11-01

We study the linear and nonlinear properties of two-dimensional matter-wave pulses in disk-shaped superfluid Fermi gases. A Kadomtsev—Petviashvili I (KPI) solitary wave has been realized for superfluid Fermi gases in the limited cases of Bardeen—Cooper—Schrieffer (BCS) regime, Bose—Einstein condensate (BEC) regime, and unitarity regime. One-lump solution as well as one-line soliton solutions for the KPI equation are obtained, and two-line soliton solutions with the same amplitude are also studied in the limited cases. The dependence of the lump propagating velocity and the sound speed of two-dimensional superfluid Fermi gases on the interaction parameter are investigated for the limited cases of BEC and unitarity.

Conjugate-gradient optimization method for orbital-free density functional calculations.

PubMed

Jiang, Hong; Yang, Weitao

2004-08-01

Orbital-free density functional theory as an extension of traditional Thomas-Fermi theory has attracted a lot of interest in the past decade because of developments in both more accurate kinetic energy functionals and highly efficient numerical methodology. In this paper, we developed a conjugate-gradient method for the numerical solution of spin-dependent extended Thomas-Fermi equation by incorporating techniques previously used in Kohn-Sham calculations. The key ingredient of the method is an approximate line-search scheme and a collective treatment of two spin densities in the case of spin-dependent extended Thomas-Fermi problem. Test calculations for a quartic two-dimensional quantum dot system and a three-dimensional sodium cluster Na216 with a local pseudopotential demonstrate that the method is accurate and efficient. (c) 2004 American Institute of Physics.

Electrical conductivity and dielectric properties of TlInS2 single crystals

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.; Hassan, A.

2011-07-01

TlInS2 single crystals were grown by using Bridgman-Stockbauer technique. Measurements of DC conductivity were carried out in parallel (σ//) and perpendicular (σ⊥) directions to the c-axis over a temperature range from 303 to 463 K. The anisotropic behaviour of the electrical conductivity was also detected. AC conductivity and dielectric measurements were studied as a function of both frequency (102-106 Hz) and temperature (297-375 K). The frequency dependence of the AC conductivity revealed that σac(ω) obeys the universal law: σac(ω) = Aωs. The mechanism of the ac charge transport across the layers of TlInS2 single crystals was referred to the hopping over localized states near the Fermi level in the frequency range >3.5 × 103 Hz. The temperature dependence of σac(ω) for TlInS2 showed that σac is thermally activated process. Both of ɛ1 and ɛ2 decrease by increasing frequency and increase by increasing temperature. Some parameters were calculated as: the density of localized states near the Fermi level NF = 1.5 × 1020 eV-1 cm-3, the average time of charge carrier hoping between localized states τ = 3.79 μs and the average hopping distance R = 6.07 nm.

Topological Properties and the Dynamical Crossover from Mixed-Valence to Kondo-Lattice Behavior in the Golden Phase of SmS.

PubMed

Kang, Chang-Jong; Choi, Hong Chul; Kim, Kyoo; Min, B I

2015-04-24

We have investigated temperature-dependent behaviors of electronic structure and resistivity in a mixed-valent golden phase of SmS, based on the dynamical mean-field-theory band-structure calculations. Upon cooling, the coherent Sm 4f bands are formed to produce the hybridization-induced pseudogap near the Fermi level, and accordingly the topology of the Fermi surface is changed to exhibit a Lifshitz-like transition. The surface states emerging in the bulk gap region are found to be not topologically protected states but just typical Rashba spin-polarized states, indicating that SmS is not a topological Kondo semimetal. From the analysis of anomalous resistivity behavior in SmS, we have identified universal energy scales, which characterize the Kondo-mixed-valent semimetallic systems.

Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy.

PubMed

Ohya, Shinobu; Muneta, Iriya; Hai, Pham Nam; Tanaka, Masaaki

2010-04-23

The valence-band structure and the Fermi level (E(F)) position of ferromagnetic-semiconductor GaMnAs are quantitatively investigated by electrically detecting the resonant tunneling levels of a GaMnAs quantum well (QW) in double-barrier heterostructures. The resonant level from the heavy-hole first state is clearly observed in the metallic GaMnAs QW, indicating that holes have a high coherency and that E(F) exists in the band gap. Clear enhancement of tunnel magnetoresistance induced by resonant tunneling is demonstrated in these double-barrier heterostructures.

Broken rotational symmetry on the Fermi surface of a high-Tc superconductor

DOE PAGES

Ramshaw, B. J.; Harrison, N.; Sebastian, S. E.; ...

2017-02-13

Broken fourfold rotational (C 4) symmetry is observed in the experimental properties of several classes of unconventional superconductors. It has been proposed that this symmetry breaking is important for superconducting pairing in these materials, but in the high-T c cuprates this broken symmetry has never been observed on the Fermi surface. Here we report a pronounced anisotropy in the angle dependence of the interlayer magnetoresistance of the underdoped high transition temperature (high-T c) superconductor YBa 2Cu 3O 6.58, directly revealing broken C 4 symmetry on the Fermi surface. Moreover, we demonstrate that this Fermi surface has C 2 symmetry ofmore » the type produced by a uniaxial or anisotropic density-wave phase. This establishes the central role of C 4 symmetry breaking in the Fermi surface reconstruction of YBa 2Cu 3O 6+δ , and suggests a striking degree of universality among unconventional superconductors.« less

The electronic structure of the high-TC cuprates within the hidden rotating order

NASA Astrophysics Data System (ADS)

Azzouz, M.; Ramakko, B. W.; Presenza-Pitman, G.

2010-09-01

The doping dependence of the Fermi surface and energy distribution curves of the high-TC cuprate materials La2 - xSrxCuO4 and Bi2Sr2CaCu2O8 + δ are analyzed within the rotating antiferromagnetism theory. Using three different quantities; the k-dependent occupation probability, the spectral function, and the chemical potential (energy spectra), the Fermi surface is calculated and compared to experimental data for La2 - xSrxCuO4. The Fermi surface we calculate evolves from hole-like pockets in the underdoped regime to large electron-like contours in the overdoped regime. This is in agreement with recent findings by Sebastian et al for the α-pocket of Y Ba2Cu3O6 + x (2010 Phys. Rev. B 81 214524). In addition, the full width at half maximum of the energy distribution curves is found to behave linearly with their peak position in agreement with experiment for Bi2Sr2CaCu2O8 + δ. The effect of scattering on both the Fermi surface and energy distribution curves is examined.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pederson, Mark R.; Baruah, Tunna; Basurto, Luis

We have applied a recently developed method to incorporate the self-interaction correction through Fermi orbitals to Mg-porphyrin, C{sub 60}, and pentacene molecules. The Fermi-Löwdin orbitals are localized and unitarily invariant to the Kohn-Sham orbitals from which they are constructed. The self-interaction-corrected energy is obtained variationally leading to an optimum set of Fermi-Löwdin orbitals (orthonormalized Fermi orbitals) that gives the minimum energy. A Fermi orbital, by definition, is dependent on a certain point which is referred to as the descriptor position. The degree to which the initial choice of descriptor positions influences the variational approach to the minimum and the complexitymore » of the energy landscape as a function of Fermi-orbital descriptors is examined in detail for Mg-porphyrin. The applications presented here also demonstrate that the method can be applied to larger molecular systems containing a few hundred electrons. The atomization energy of the C{sub 60} molecule within the Fermi-Löwdin-orbital self-interaction-correction approach is significantly improved compared to local density approximation in the Perdew-Wang 92 functional and generalized gradient approximation of Perdew-Burke-Ernzerhof functionals. The eigenvalues of the highest occupied molecular orbitals show qualitative improvement.« less

Self-interaction corrections applied to Mg-porphyrin, C60, and pentacene molecules

NASA Astrophysics Data System (ADS)

Pederson, Mark R.; Baruah, Tunna; Kao, Der-you; Basurto, Luis

2016-04-01

We have applied a recently developed method to incorporate the self-interaction correction through Fermi orbitals to Mg-porphyrin, C60, and pentacene molecules. The Fermi-Löwdin orbitals are localized and unitarily invariant to the Kohn-Sham orbitals from which they are constructed. The self-interaction-corrected energy is obtained variationally leading to an optimum set of Fermi-Löwdin orbitals (orthonormalized Fermi orbitals) that gives the minimum energy. A Fermi orbital, by definition, is dependent on a certain point which is referred to as the descriptor position. The degree to which the initial choice of descriptor positions influences the variational approach to the minimum and the complexity of the energy landscape as a function of Fermi-orbital descriptors is examined in detail for Mg-porphyrin. The applications presented here also demonstrate that the method can be applied to larger molecular systems containing a few hundred electrons. The atomization energy of the C60 molecule within the Fermi-Löwdin-orbital self-interaction-correction approach is significantly improved compared to local density approximation in the Perdew-Wang 92 functional and generalized gradient approximation of Perdew-Burke-Ernzerhof functionals. The eigenvalues of the highest occupied molecular orbitals show qualitative improvement.

Entanglement entropy and the Fermi surface.

PubMed

Swingle, Brian

2010-07-30

Free fermions with a finite Fermi surface are known to exhibit an anomalously large entanglement entropy. The leading contribution to the entanglement entropy of a region of linear size L in d spatial dimensions is S∼L(d-1)logL, a result that should be contrasted with the usual boundary law S∼L(d-1). This term depends only on the geometry of the Fermi surface and on the boundary of the region in question. I give an intuitive account of this anomalous scaling based on a low energy description of the Fermi surface as a collection of one-dimensional gapless modes. Using this picture, I predict a violation of the boundary law in a number of other strongly correlated systems.

Localization of massless Dirac particles via spatial modulations of the Fermi velocity

NASA Astrophysics Data System (ADS)

Downing, C. A.; Portnoi, M. E.

2017-08-01

The electrons found in Dirac materials are notorious for being difficult to manipulate due to the Klein phenomenon and absence of backscattering. Here we investigate how spatial modulations of the Fermi velocity in two-dimensional Dirac materials can give rise to localization effects, with either full (zero-dimensional) confinement or partial (one-dimensional) confinement possible depending on the geometry of the velocity modulation. We present several exactly solvable models illustrating the nature of the bound states which arise, revealing how the gradient of the Fermi velocity is crucial for determining fundamental properties of the bound states such as the zero-point energy. We discuss the implications for guiding electronic waves in few-mode waveguides formed by Fermi velocity modulation.

Bulk Fermi Surfaces of the Dirac Type-II Semimetallic Candidates M Al3 (Where M =V , Nb, and Ta)

NASA Astrophysics Data System (ADS)

Chen, K.-W.; Lian, X.; Lai, Y.; Aryal, N.; Chiu, Y.-C.; Lan, W.; Graf, D.; Manousakis, E.; Baumbach, R. E.; Balicas, L.

2018-05-01

We report a de Haas-van Alphen (dHvA) effect study on the Dirac type-II semimetallic candidates M Al3 (where, M =V , Nb and Ta). The angular dependence of their Fermi surface (FS) cross-sectional areas reveals a remarkably good agreement with our first-principles calculations. Therefore, dHvA supports the existence of tilted Dirac cones with Dirac type-II nodes located at 100, 230 and 250 meV above the Fermi level ɛF for VAl3 , NbAl3 and TaAl3 respectively, in agreement with the prediction of broken Lorentz invariance in these compounds. However, for all three compounds we find that the cyclotron orbits on their FSs, including an orbit nearly enclosing the Dirac type-II node, yield trivial Berry phases. We explain this via an analysis of the Berry phase where the position of this orbit, relative to the Dirac node, is adjusted within the error implied by the small disagreement between our calculations and the experiments. We suggest that a very small amount of doping could displace ɛF to produce topologically nontrivial orbits encircling their Dirac node(s).

Stability of rhombohedral phases in vanadium at high-pressure and high-temperature: first-principles investigations

NASA Astrophysics Data System (ADS)

Wang, Yi X.; Wu, Q.; Chen, Xiang R.; Geng, Hua Y.

2016-09-01

The pressure-induced transition of vanadium from BCC to rhombohedral structures is unique and intriguing among transition metals. In this work, the stability of these phases is revisited by using density functional theory. At finite temperatures, a novel transition of rhombohedral phases back to BCC phase induced by thermal electrons is discovered. This reentrant transition is found not driven by phonons, instead it is the electronic entropy that stabilizes the latter phase, which is totally out of expectation. Parallel to this transition, we find a peculiar and strong increase of the shear modulus C44 with increasing temperature. It is counter-intuitive in the sense that it suggests an unusual harding mechanism of vanadium by temperature. With these stability analyses, the high-pressure and finite-temperature phase diagram of vanadium is proposed. Furthermore, the dependence of the stability of RH phases on the Fermi energy and chemical environment is investigated. The results demonstrate that the position of the Fermi level has a significant impact on the phase stability, and follows the band-filling argument. Besides the Fermi surface nesting, we find that the localization/delocalization of the d orbitals also contributes to the instability of rhombohedral distortions in vanadium.

Effects of Differing Energy Dependences in Three Level-Density Models on Calculated Cross Sections

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, C.Y.

2000-07-15

Three level-density formalisms commonly used for cross-section calculations are examined. Residual nuclides in neutron interaction with {sup 58}Ni are chosen to quantify the well-known differences in the energy dependences of the three formalisms. Level-density parameters for the Gilbert and Cameron model are determined from experimental information. Parameters for the back-shifted Fermi-gas and generalized superfluid models are obtained by fitting their level densities at two selected energies for each nuclide to those of the Gilbert and Cameron model, forcing the level densities of the three models to be as close as physically allowed. The remaining differences are in their energy dependencesmore » that, it is shown, can change the calculated cross sections and particle emission spectra significantly, in some cases or energy ranges by a factor of 2.« less

Inhomogeneous Weyl and Dirac Semimetals: Transport in Axial Magnetic Fields and Fermi Arc Surface States from Pseudo-Landau Levels

NASA Astrophysics Data System (ADS)

Grushin, Adolfo G.; Venderbos, Jörn W. F.; Vishwanath, Ashvin; Ilan, Roni

2016-10-01

Topological Dirac and Weyl semimetals have an energy spectrum that hosts Weyl nodes appearing in pairs of opposite chirality. Topological stability is ensured when the nodes are separated in momentum space and unique spectral and transport properties follow. In this work, we study the effect of a space-dependent Weyl node separation, which we interpret as an emergent background axial-vector potential, on the electromagnetic response and the energy spectrum of Weyl and Dirac semimetals. This situation can arise in the solid state either from inhomogeneous strain or nonuniform magnetization and can also be engineered in cold atomic systems. Using a semiclassical approach, we show that the resulting axial magnetic field B5 is observable through an enhancement of the conductivity as σ ˜B52 due to an underlying chiral pseudomagnetic effect. We then use two lattice models to analyze the effect of B5 on the spectral properties of topological semimetals. We describe the emergent pseudo-Landau-level structure for different spatial profiles of B5, revealing that (i) the celebrated surface states of Weyl semimetals, the Fermi arcs, can be reinterpreted as n =0 pseudo-Landau levels resulting from a B5 confined to the surface, (ii) as a consequence of position-momentum locking, a bulk B5 creates pseudo-Landau levels interpolating in real space between Fermi arcs at opposite surfaces, and (iii) there are equilibrium bound currents proportional to B5 that average to zero over the sample, which are the analogs of bound currents in magnetic materials. We conclude by discussing how our findings can be probed experimentally.

Atomic Number Dependence of Hadron Production at Large Transverse Momentum in 300 GeV Proton--Nucleus Collisions

DOE R&D Accomplishments Database

Cronin, J. W.; Frisch, H. J.; Shochet, M. J.; Boymond, J. P.; Mermod, R.; Piroue, P. A.; Sumner, R. L.

1974-07-15

In an experiment at the Fermi National Accelerator Laboratory we have compared the production of large transverse momentum hadrons from targets of W, Ti, and Be bombarded by 300 GeV protons. The hadron yields were measured at 90 degrees in the proton-nucleon c.m. system with a magnetic spectrometer equipped with 2 Cerenkov counters and a hadron calorimeter. The production cross-sections have a dependence on the atomic number A that grows with P{sub 1}, eventually leveling off proportional to A{sup 1.1}.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

Theoretical Interpretation of Pass 8 Fermi -LAT e + + e - Data

DOE PAGES

Di Mauro, M.; Manconi, S.; Vittino, A.; ...

2017-08-17

The flux of positrons and electrons (e + + e -) has been measured by the Fermi Large Area Telescope (LAT) in the energy range between 7 GeV and 2 TeV. Here, we discuss a number of interpretations of Pass 8 Fermi-LAT e + + e - spectrum, combining electron and positron emission from supernova remnants (SNRs) and pulsar wind nebulae (PWNe), or produced by the collision of cosmic rays (CRs) with the interstellar medium. We also found that the Fermi-LAT spectrum is compatible with the sum of electrons from a smooth SNR population, positrons from cataloged PWNe, and amore » secondary component. If we include in our analysis constraints from the AMS-02 positron spectrum, we obtain a slightly worse fit to the e + + e - Fermi-LAT spectrum, depending on the propagation model. As an additional scenario, we replace the smooth SNR component within 0.7 kpc with the individual sources found in Green's catalog of Galactic SNRs. We find that separate consideration of far and near sources helps to reproduce the e + + e - Fermi-LAT spectrum. However, we show that the fit degrades when the radio constraints on the positron emission from Vela SNR (which is the main contributor at high energies) are taken into account. We find that a break in the power-law injection spectrum at about 100 GeV can also reproduce the measured e + + e -spectrum and, among the CR propagation models that we consider, no reasonable break of the power-law dependence of the diffusion coefficient can modify the electron flux enough to reproduce the observed shape.« less

Theoretical Interpretation of Pass 8 Fermi -LAT e + + e - Data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Mauro, M.; Manconi, S.; Vittino, A.

The flux of positrons and electrons (e + + e -) has been measured by the Fermi Large Area Telescope (LAT) in the energy range between 7 GeV and 2 TeV. Here, we discuss a number of interpretations of Pass 8 Fermi-LAT e + + e - spectrum, combining electron and positron emission from supernova remnants (SNRs) and pulsar wind nebulae (PWNe), or produced by the collision of cosmic rays (CRs) with the interstellar medium. We also found that the Fermi-LAT spectrum is compatible with the sum of electrons from a smooth SNR population, positrons from cataloged PWNe, and amore » secondary component. If we include in our analysis constraints from the AMS-02 positron spectrum, we obtain a slightly worse fit to the e + + e - Fermi-LAT spectrum, depending on the propagation model. As an additional scenario, we replace the smooth SNR component within 0.7 kpc with the individual sources found in Green's catalog of Galactic SNRs. We find that separate consideration of far and near sources helps to reproduce the e + + e - Fermi-LAT spectrum. However, we show that the fit degrades when the radio constraints on the positron emission from Vela SNR (which is the main contributor at high energies) are taken into account. We find that a break in the power-law injection spectrum at about 100 GeV can also reproduce the measured e + + e -spectrum and, among the CR propagation models that we consider, no reasonable break of the power-law dependence of the diffusion coefficient can modify the electron flux enough to reproduce the observed shape.« less

Interaction of sodium atoms with stacking faults in silicon with different Fermi levels

NASA Astrophysics Data System (ADS)

Ohno, Yutaka; Morito, Haruhiko; Kutsukake, Kentaro; Yonenaga, Ichiro; Yokoi, Tatsuya; Nakamura, Atsutomo; Matsunaga, Katsuyuki

2018-06-01

Variation in the formation energy of stacking faults (SFs) with the contamination of Na atoms was examined in Si crystals with different Fermi levels. Na atoms agglomerated at SFs under an electronic interaction, reducing the SF formation energy. The energy decreased with the decrease of the Fermi level: it was reduced by more than 10 mJ/m2 in p-type Si, whereas it was barely reduced in n-type Si. Owing to the energy reduction, Na atoms agglomerating at SFs in p-type Si are stable compared with those in n-type Si, and this hypothesis was supported by ab initio calculations.

Nicholas Metropolis Award for Outstanding Doctoral Thesis Work in Computational Physics Talk: Equation of State of the Dilute Fermi Gases

NASA Astrophysics Data System (ADS)

Chang, Soon Yong

2008-04-01

In the recent years, dilute Fermi gases have played the center stage role in the many-body physics. The gas of neutral alkali atoms such as Lithium-6 and Potassium-40 can be trapped at temperatures below the Fermi degeneracy. The most relevant feature of these gases is that the interaction is tunable and strongly interacting superfluid can be artificially created. I will discuss the recent progress in understanding the ground state properties of the dilute Fermi gases at different interaction regimes. First, I will present the case of the spin symmetric systems where the Fermi gas can smoothly crossover from the BCS regime to the BEC regime. Then, I will discuss the case of the spin polarized systems, where different quantum phases can occur as a function of the polarization. In the laboratory, the trapped Fermi gas shows spatial dependence of the different quantum phases. This can be understood in the context of the local variation of the chemical potential. I will present the most accurate quantum ab initio results and the relevant experiments.

Polarization-dependent X-ray photoemission spectroscopy for High-Tc cuprate superconductors

NASA Astrophysics Data System (ADS)

Yamagami, Kohei; Kanai, Yuina; Naimen, Sho; Fujiwara, Hidenori; Kiss, Takayuki; Tanaka, Arata; Higashiya, Atsushi; Imada, Shin; Kadono, Toshiharu; Tamasaku, Kenji; Muro, Takayuki; Yabashi, Makina; Ishikawa, Tetsuya; Eisaki, Hiroshi; Miyasaka, Shigeki; Tajima, Setsuko; Sekiyama, Akira

2018-05-01

We have performed photon energy (hν) and linear polarization dependent X-ray photoemission for optimal doped Pb-Bi2Sr2CaCu2O8+δ (Bi2212) to investigate the ground Cu 3d orbital symmetry. We identified that the bulk Cu 3d components in valence-band spectra develop with decreasing hν from 7900 eV to 460 eV. Moreover, the photoelectron intensity ratio of the valence-band spectra measured at hν = 460 eV has shown that the Cu 3dx2-y2 orbital contributions are dominant near the Fermi level (EF). Meanwhile, we revealed that the bulk Cu 2p3/2 core-level spectra without the Bi 4s component is detected at hν = 1550 eV compared with hν and linear-polarization-dependent spectra.

Electronic topological transitions in the AgPd system

NASA Astrophysics Data System (ADS)

Skorodumova, N. V.; Simak, S. I.; Smirnova, E. A.; Vekilov, Yu. Kh.

1995-02-01

“First-principles” LMTO-CPA calculations of the Fermi surfaces and thermodynamic properties of AgPd random alloys are presented. We show that there are at least four electronic topological transitions (ETT) in the system. The changes of the Fermi surface topology lead to the appearance of peculiarities in the concentration dependence of the thermodynamic (ground state) properties.

Correlation of Device Performance and Fermi Level Shift in the Emitting Layer of Organic Light-Emitting Diodes with Amine-Based Electron Injection Layers.

PubMed

Stolz, Sebastian; Lemmer, Uli; Hernandez-Sosa, Gerardo; Mankel, Eric

2018-03-14

We investigate three amine-based polymers, polyethylenimine and two amino-functionalized polyfluorenes, as electron injection layers (EILs) in organic light-emitting diodes (OLEDs) and find correlations between the molecular structure of the polymers, the electronic alignment at the emitter/EIL interface, and the resulting device performance. X-ray photoelectron spectroscopy measurements of the emitter/EIL interface indicate that all three EIL polymers induce an upward shift of the Fermi level in the emitting layer close to the interface similar to n-type doping. The absolute value of this Fermi level shift, which can be explained by an electron transfer from the EIL polymers into the emitting layer, correlates with the number of nitrogen-containing groups in the side chains of the polymers. Whereas polyethylenimine (PEI) and one of the investigated polyfluorenes (PFCON-C) have six such groups per monomer unit, the second investigated polyfluorene (PFN) only possesses two. Consequently, we measure Fermi level shifts of 0.5-0.7 eV for PEI and PFCON-C and only 0.2 eV for PFN. As a result of these Fermi level shifts, the energetic barrier for electron injection is significantly lowered and OLEDs which comprise PEI or PFCON-C as an EIL exhibit a more than twofold higher luminous efficacy than OLEDs with PFN.

Mechanism of charge transfer and its impacts on Fermi-level pinning for gas molecules adsorbed on monolayer WS2.

PubMed

Zhou, Changjie; Yang, Weihuang; Zhu, Huili

2015-06-07

Density functional theory calculations were performed to assess changes in the geometric and electronic structures of monolayer WS2 upon adsorption of various gas molecules (H2, O2, H2O, NH3, NO, NO2, and CO). The most stable configuration of the adsorbed molecules, the adsorption energy, and the degree of charge transfer between adsorbate and substrate were determined. All evaluated molecules were physisorbed on monolayer WS2 with a low degree of charge transfer and accept charge from the monolayer, except for NH3, which is a charge donor. Band structure calculations showed that the valence and conduction bands of monolayer WS2 are not significantly altered upon adsorption of H2, H2O, NH3, and CO, whereas the lowest unoccupied molecular orbitals of O2, NO, and NO2 are pinned around the Fermi-level when these molecules are adsorbed on monolayer WS2. The phenomenon of Fermi-level pinning was discussed in light of the traditional and orbital mixing charge transfer theories. The impacts of the charge transfer mechanism on Fermi-level pinning were confirmed for the gas molecules adsorbed on monolayer WS2. The proposed mechanism governing Fermi-level pinning is applicable to the systems of adsorbates on recently developed two-dimensional materials, such as graphene and transition metal dichalcogenides.

Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

NASA Astrophysics Data System (ADS)

Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

2016-04-01

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

Separation of electron and hole dynamics in the semimetal LaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, F.; Xu, J.; Botana, A. S.

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strongmore » magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.« less

Formation of copper precipitates in silicon

NASA Astrophysics Data System (ADS)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

Two-dimensional Fermi surfaces in Kondo insulating SmB6

NASA Astrophysics Data System (ADS)

Li, Gang

There has been renewed interest in Samarium Hexaboride, which is a strongly correlated heavy Fermion material. Hybridization between itinerant electrons and localized orbitals lead to an opening of charge gap at low temperature. However, the resistivity of SmB6 does not diverge at low temperature. Former studies suggested that this residual conductance is contributed by various origins. Recent theoretical developments suggest that the particular symmetry of energy bands of SmB6 may host a topologically non-trivial surface state, i.e., a topological Kondo insulator. To probe the Fermiology of the possible metallic surface state, we use sensitive torque magnetometry to detect the de Haas van Alphen (dHvA) effect due to Landau level quantization on flux-grown crystals, down to He-3 temperature and up to 45 Tesla. Our angular and temperature dependent data suggest two-dimensional Fermi Surfaces lie in both crystalline (001) and (101) surface planes of SmB6.

The Meyer-Neldel rule and the statistical shift of the Fermi level in amorphous semiconductors

NASA Astrophysics Data System (ADS)

Kikuchi, Minoru

1988-11-01

The statistical model is used to study the origin of the Meyer-Neldel (MN) rule [σ0∝exp(AEσ)] in a tetrahedral amorphous system. It is shown that a deep minimum in the gap density of states spectrum can lead to the linearity of the Fermi energy F(T) to the derivative (dF/dkT), as required from the rule. An expression is derived which relates the constant A in the rule to the gap density of states spectrum. The dispersion ranges of σ0 and Eσ are found to be related with the constant A. Model calculations show a magnitude of A and a wide dispersion of σ0 and Eσ in fair agreement with the experimental observations. A discussion is given to what extent the MN rule is dependent on the gap density of states spectrum.

Fermi's paradox, extraterrestrial life and the future of humanity: a Bayesian analysis

NASA Astrophysics Data System (ADS)

Verendel, Vilhelm; Häggström, Olle

2017-01-01

The Great Filter interpretation of Fermi's great silence asserts that Npq is not a very large number, where N is the number of potentially life-supporting planets in the observable universe, p is the probability that a randomly chosen such planet develops intelligent life to the level of present-day human civilization, and q is the conditional probability that it then goes on to develop a technological supercivilization visible all over the observable universe. Evidence suggests that N is huge, which implies that pq is very small. Hanson (1998) and Bostrom (2008) have argued that the discovery of extraterrestrial life would point towards p not being small and therefore a very small q, which can be seen as bad news for humanity's prospects of colonizing the universe. Here we investigate whether a Bayesian analysis supports their argument, and the answer turns out to depend critically on the choice of prior distribution.

Modification of graphene electronic properties via controllable gas-phase doping with copper chloride

NASA Astrophysics Data System (ADS)

Rybin, Maxim G.; Islamova, Vera R.; Obraztsova, Ekaterina A.; Obraztsova, Elena D.

2018-01-01

Molecular doping is an efficient, non-destructive, and simple method for changing the electronic structure of materials. Here, we present a simple air ambient vapor deposition method for functionalization of pristine graphene with a strong electron acceptor: copper chloride. The doped graphene was characterized by Raman spectroscopy, UV-vis-NIR optical absorption spectroscopy, scanning electron microscopy, and electro-physical measurements performed using the 4-probe method. The effect of charge transfer from graphene to a dopant results in shifting the Fermi level in doped graphene. The change of the electronic structure of doped graphene was confirmed by the tangential Raman peak (G-peak) shift and by the appearance of the gap in the UV-vis-NIR spectrum after doping. Moreover, the charge transfer resulted in a substantial decrease in electrical sheet resistance depending on the doping level. At the highest concentration of copper chloride, a Fermi level shift into the valence band up to 0.64 eV and a decrease in the sheet resistance value by 2.36 times were observed (from 888 Ω/sq to 376 Ω/sq for a single graphene layer with 97% of transparency).

Second-Order Fermi Acceleration and Emission in Blazar Jets

NASA Astrophysics Data System (ADS)

Asano, Katsuaki; Takahara, Fumio; Toma, Kenji; Kusunose, Masaaki; Kakuwa, Jun

The second-order Fermi acceleration (Fermi-II) driven by turbulence may be responsible for the electron acceleration in blazar jets. We test this model with time-dependent simulations, adopt it for 1ES 1101-232, and Mrk 421. The Fermi-II model with radial evolution of the electron injection rate and/or diffusion coefficient can reproduce the spectra from the radio to the gamma-ray regime. For Mrk 421, an external radio photon field with a luminosity of 4.9 begin{math} {times} 10 (38) erg s (-1) is required to agree with the observed GeV flux. The temporal variability of the diffusion coefficient or injection rate causes flare emission. The observed synchronicity of X-ray and TeV flares implies a decrease of the magnetic field in the flaring source region.

Collective modes of a two-dimensional Fermi gas at finite temperature

NASA Astrophysics Data System (ADS)

Mulkerin, Brendan C.; Liu, Xia-Ji; Hu, Hui

2018-05-01

We examine the breathing mode of a strongly interacting two-dimensional Fermi gas and the role of temperature on the anomalous breaking of scale invariance. By calculating the equation of state with different many-body T -matrix theories and the virial expansion, we obtain a hydrodynamic equation of the harmonically trapped Fermi gas (with trapping frequency ω0) through the local density approximation. By solving the hydrodynamic equations, we determine the breathing mode frequencies as a function of interaction strength and temperature. We find that the breathing mode anomaly depends sensitively on both interaction strength and temperature. In particular, in the strongly interacting regime, we predict a significant downshift of the breathing mode frequency, below the scale invariant value of 2 ω0 , for temperatures of the order of the Fermi temperature.

Acoustics of tachyon Fermi gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trojan, Ernst; Vlasov, George V.

2011-06-15

We consider a Fermi gas of free tachyons as a continuous medium and find whether it satisfies the causality condition. There is no stable tachyon matter with the particle density below critical value n{sub T} and the Fermi momentum k{sub F}<{radical}((3/2))m that depends on the tachyon mass m. The pressure P and energy density E cannot be arbitrary small, but the situation P>E is not forbidden. Existence of shock waves in tachyon gas is also discussed. At low density n{sub T}

Extending the Fermi-LAT data processing pipeline to the grid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zimmer, S.; Arrabito, L.; Glanzman, T.

2015-05-12

The Data Handling Pipeline ("Pipeline") has been developed for the Fermi Gamma-Ray Space Telescope (Fermi) Large Area Telescope (LAT) which launched in June 2008. Since then it has been in use to completely automate the production of data quality monitoring quantities, reconstruction and routine analysis of all data received from the satellite and to deliver science products to the collaboration and the Fermi Science Support Center. Aside from the reconstruction of raw data from the satellite (Level 1), data reprocessing and various event-level analyses are also reasonably heavy loads on the pipeline and computing resources. These other loads, unlike Levelmore » 1, can run continuously for weeks or months at a time. Additionally, it receives heavy use in performing production Monte Carlo tasks.« less

Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers.

PubMed

Smith, Christopher E; Xie, Zuoti; Bâldea, Ioan; Frisbie, C Daniel

2018-01-18

Conducting probe atomic force microscopy (CP-AFM) was employed to examine electron tunneling in self-assembled monolayer (SAM) junctions. A 2.3 nm long perylene tetracarboxylic acid diimide (PDI) acceptor molecule equipped with isocyanide linker groups was synthesized, adsorbed onto Ag, Au and Pt substrates, and the current-voltage (I-V) properties were measured by CP-AFM. The dependence of the low-bias resistance (R) on contact work function indicates that transport is LUMO-assisted ('n-type behavior'). A single-level tunneling model combined with transition voltage spectroscopy (TVS) was employed to analyze the experimental I-V curves and to extract the effective LUMO position ε l = E LUMO - E F and the effective electronic coupling (Γ) between the PDI redox core and the contacts. This analysis revealed a strong Fermi level (E F ) pinning effect in all the junctions, likely due to interface dipoles that significantly increased with increasing contact work function, as revealed by scanning Kelvin probe microscopy (SKPM). Furthermore, the temperature (T) dependence of R was found to be substantial. For Pt/Pt junctions, R varied more than two orders of magnitude in the range 248 K < T < 338 K. Importantly, the R(T) data are consistent with a single step electron tunneling mechanism and allow independent determination of ε l , giving values compatible with estimates of ε l based on analysis of the full I-V data. Theoretical analysis revealed a general criterion to unambiguously rule out a two-step transport mechanism: namely, if measured resistance data exhibit a pronounced Arrhenius-type temperature dependence, a two-step electron transfer scenario should be excluded in cases where the activation energy depends on contact metallurgy. Overall, our results indicate (1) the generality of the Fermi level pinning phenomenon in molecular junctions, (2) the utility of employing the single level tunneling model for determining essential electronic structure parameters (ε l and Γ), and (3) the importance of changing the nature of the contacts to verify transport mechanisms.

Depletion region surface effects in electron beam induced current measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haney, Paul M.; Zhitenev, Nikolai B.; Yoon, Heayoung P.

2016-09-07

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the p-n junction depletion region result in perfect charge collection efficiency. However, we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and chargedmore » surfaces. For neutral surfaces, we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find that the experimental data on FIB-prepared Si solar cells are most consistent with a charged surface and discuss the implications for EBIC experiments on polycrystalline materials.« less

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

NASA Astrophysics Data System (ADS)

Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

2018-06-01

The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

Anisotropy of the Fermi surface, Fermi velocity, many-body enhancement, and superconducting energy gap in Nb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crabtree, G.W.; Dye, D.H.; Karim, D.P.

1987-02-01

The detailed angular dependence of the Fermi radius k/sub F/, the Fermi velocity v/sub F/(k), the many-body enhancement factor lambda(k), and the superconducting energy gap ..delta..(k), for electrons on the Fermi surface of Nb are derived with use of the de Haas--van Alphen (dHvA) data of Karim, Ketterson, and Crabtree (J. Low Temp. Phys. 30, 389 (1978)), a Korringa-Kohn-Rostoker parametrization scheme, and an empirically adjusted band-structure calculation of Koelling. The parametrization is a nonrelativistic five-parameter fit allowing for cubic rather than spherical symmetry inside the muffin-tin spheres. The parametrized Fermi surface gives a detailed interpretation of the previously unexplained kappa,more » ..cap alpha..', and ..cap alpha..'' orbits in the dHvA data. Comparison of the parametrized Fermi velocities with those of the empirically adjusted band calculation allow the anisotropic many-body enhancement factor lambda(k) to be determined. Theoretical calculations of the electron-phonon interaction based on the tight-binding model agree with our derived values of lambda(k) much better than those based on the rigid-muffin-tin approximation. The anisotropy in the superconducting energy gap ..delta..(k) is estimated from our results for lambda(k), assuming weak anisotropy.« less

Anisotropy of the Fermi surface, Fermi velocity, many-body enhancement, and superconducting energy gap in Nb

NASA Astrophysics Data System (ADS)

Crabtree, G. W.; Dye, D. H.; Karim, D. P.; Campbell, S. A.; Ketterson, J. B.

1987-02-01

The detailed angular dependence of the Fermi radius kF, the Fermi velocity vF(k), the many-body enhancement factor λ(k), and the superconducting energy gap Δ(k), for electrons on the Fermi surface of Nb are derived with use of the de Haas-van Alphen (dHvA) data of Karim, Ketterson, and Crabtree [J. Low Temp. Phys. 30, 389 (1978)], a Korringa-Kohn-Rostoker parametrization scheme, and an empirically adjusted band-structure calculation of Koelling. The parametrization is a nonrelativistic five-parameter fit allowing for cubic rather than spherical symmetry inside the muffin-tin spheres. The parametrized Fermi surface gives a detailed interpretation of the previously unexplained κ, α', and α'' orbits in the dHvA data. Comparison of the parametrized Fermi velocities with those of the empirically adjusted band calculation allow the anisotropic many-body enhancement factor λ(k) to be determined. Theoretical calculations of the electron-phonon interaction based on the tight-binding model agree with our derived values of λ(k) much better than those based on the rigid-muffin-tin approximation. The anisotropy in the superconducting energy gap Δ(k) is estimated from our results for λ(k), assuming weak anisotropy.

Enlightening the ultrahigh electrical conductivities of doped double-wall carbon nanotube fibers by Raman spectroscopy and first-principles calculations.

PubMed

Tristant, Damien; Zubair, Ahmed; Puech, Pascal; Neumayer, Frédéric; Moyano, Sébastien; Headrick, Robert J; Tsentalovich, Dmitri E; Young, Colin C; Gerber, Iann C; Pasquali, Matteo; Kono, Junichiro; Leotin, Jean

2016-12-01

Highly aligned, packed, and doped carbon nanotube (CNT) fibers with electrical conductivities approaching that of copper have recently become available. These fibers are promising for high-power electrical applications that require light-weight, high current-carrying capacity cables. However, a microscopic understanding of how doping affects the electrical conductance of such CNT fibers in a quantitative manner has been lacking. Here, we performed Raman spectroscopy measurements combined with first-principles calculations to determine the position of the average Fermi energy and to obtain the temperature of chlorosulfonic-acid-doped double-wall CNT fibers under high current. Due to the unique way in which double-wall CNT Raman spectra depend on doping, it is possible to use Raman data to determine the doping level quantitatively. The correspondence between the Fermi level shift and the carbon charge transfer is derived from a tight-binding model and validated by several calculations. For the doped fiber, we were able to associate an average Fermi energy shift of ∼-0.7 eV with a conductance increase by a factor of ∼5. Furthermore, since current induces heating, local temperature determination is possible. Through the Stokes-to-anti-Stokes intensity ratio of the G-band peaks, we estimated a temperature rise at the fiber surface of ∼135 K at a current density of 2.27 × 10 8 A m -2 identical to that from the G-band shift, suggesting that thermalization between CNTs is well achieved.

Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bovkun, L. S., E-mail: bovkun@ipmras.ru; Krishtopenko, S. S.; Zholudev, M. S.

The exchange enhancement of the electron g-factor in perpendicular magnetic fields to 12 T in HgTe/CdHgTe quantum wells 20 nm wide with a semimetal band structure is studied. The electron effective mass and g-factor at the Fermi level are determined by analyzing the temperature dependence of the amplitude of Shubnikov–de Haas oscillation in weak fields and near odd Landau-level filling factors ν ≤ 9. The experimental values are compared with theoretical calculations performed in the one-electron approximation using the eight-band kp Hamiltonian. The found dependence of g-factor enhancement on the electron concentration is explained by changes in the contributions ofmore » hole- and electron-like states to exchange corrections to the Landau-level energies in the conduction band.« less

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishchenko, D. V., E-mail: miracle4348@gmail.com; Klimov, A. E.; Shumsky, V. N.

A model of the Pb{sub 1–x}Sn{sub x}Te:In compound, based on concepts of the theory of disordered systems is considered. The temperature dependences of the Fermi-level position and carrier concentration are calculated depending on the indium doping level and are compared with experimental data. The transient current–voltage characteristics are calculated in the mode of injection from the contact and current limitation by space charge at various voltage-variation rates. The data obtained are compared with the experiments. It is demonstrated that the shape of the characteristics is controlled by the parameters of electron capture at localized states. Photocurrent relaxation in a magneticmore » field is studied, and the mechanism of such relaxation is discussed under the assumption of the magnetic freezing of carriers.« less

Stabilization of Ag nanostructures by tuning their Fermi levels

NASA Astrophysics Data System (ADS)

Tani, Tadaaki; Kan, Ryota; Yamano, Yuka; Uchida, Takayuki

2018-05-01

The oxidation of Ag nanostructures has been studied as a key step for their degradation under the guiding principle in the previous paper that they are stable when their Fermi level is lower than those of their surroundings. The drop of the Fermi level of a thin Ag layer was caused by the formation of self-assembled monolayers (SAMs) of certain organic compounds including those of photographic interest and a monolayer of AgI, and attributed to the formation of dielectric layers, whose positive charges were closer to the Ag layer than negative charges. A consideration is given on further examinations needed to realize the above guiding principle in individual devices.

Implication of Tsallis entropy in the Thomas–Fermi model for self-gravitating fermions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ourabah, Kamel; Tribeche, Mouloud, E-mail: mouloudtribeche@yahoo.fr

The Thomas–Fermi approach for self-gravitating fermions is revisited within the theoretical framework of the q-statistics. Starting from the q-deformation of the Fermi–Dirac distribution function, a generalized Thomas–Fermi equation is derived. It is shown that the Tsallis entropy preserves a scaling property of this equation. The q-statistical approach to Jeans’ instability in a system of self-gravitating fermions is also addressed. The dependence of the Jeans’ wavenumber (or the Jeans length) on the parameter q is traced. It is found that the q-statistics makes the Fermionic system unstable at scales shorter than the standard Jeans length. -- Highlights: •Thomas–Fermi approach for self-gravitatingmore » fermions. •A generalized Thomas–Fermi equation is derived. •Nonextensivity preserves a scaling property of this equation. •Nonextensive approach to Jeans’ instability of self-gravitating fermions. •It is found that nonextensivity makes the Fermionic system unstable at shorter scales.« less

Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

NASA Astrophysics Data System (ADS)

Koenraad, P. M.; Kleemans, N. A. J. M.; van Bree, J.; Govorov, A. O.; Hamhuis, G. J.; Notzel, R.; Silov, A. Yu.

2010-03-01

Using voltage dependent photoluminescence spectroscopy we have studied the coupling between QD states and the continuum of states of a Fermi sea of electrons in the close proximity of a self-assembled InAs quantum dot embedded in GaAs. This coupling gives rise to new optical transitions, manifesting the formation of many-body exciton states. The lines in the photoluminescence spectra can be well explained within the Anderson and Mahan exciton models. The presence of Mahan excitons originates from the Coulomb interaction between electrons in the Fermi sea and the hole(s) in the QD whereas a the second type of many-body exciton is due to a hybridized exciton originating from the tunnel interaction between the continuum of states in the Fermi sea and the localized state in the QD. Our study demonstrates the possibility to investigate a variety of many-body states in QDs coupled to a Fermi sea and opens the way to investigate optically the Kondo effect and related spin phenomena in these systems.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it

2016-03-14

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron andmore » hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.« less

Theoretical Interpretation of Pass 8 Fermi -LAT e {sup +} + e {sup −} Data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Mauro, M.; Manconi, S.; Donato, F.

The flux of positrons and electrons ( e {sup +} + e {sup −}) has been measured by the Fermi Large Area Telescope (LAT) in the energy range between 7 GeV and 2 TeV. We discuss a number of interpretations of Pass 8 Fermi -LAT e {sup +} + e {sup −} spectrum, combining electron and positron emission from supernova remnants (SNRs) and pulsar wind nebulae (PWNe), or produced by the collision of cosmic rays (CRs) with the interstellar medium. We find that the Fermi -LAT spectrum is compatible with the sum of electrons from a smooth SNR population, positronsmore » from cataloged PWNe, and a secondary component. If we include in our analysis constraints from the AMS-02 positron spectrum, we obtain a slightly worse fit to the e {sup +} + e {sup −} Fermi -LAT spectrum, depending on the propagation model. As an additional scenario, we replace the smooth SNR component within 0.7 kpc with the individual sources found in Green’s catalog of Galactic SNRs. We find that separate consideration of far and near sources helps to reproduce the e {sup +} + e {sup −} Fermi -LAT spectrum. However, we show that the fit degrades when the radio constraints on the positron emission from Vela SNR (which is the main contributor at high energies) are taken into account. We find that a break in the power-law injection spectrum at about 100 GeV can also reproduce the measured e {sup +} + e {sup −} spectrum and, among the CR propagation models that we consider, no reasonable break of the power-law dependence of the diffusion coefficient can modify the electron flux enough to reproduce the observed shape.« less

A broadband metamaterial absorber based on multi-layer graphene in the terahertz region

NASA Astrophysics Data System (ADS)

Fu, Pan; Liu, Fei; Ren, Guang Jun; Su, Fei; Li, Dong; Yao, Jian Quan

2018-06-01

A broadband metamaterial absorber, composed of the periodic graphene pattern on SiO2 dielectric with the double layer graphene films inserted in it and all of them backed by metal plan, is proposed and investigated. The simulation results reveal that the wide absorption band can be flexibly tuned between the low-frequency band and the high-frequency band by adjusting graphene's Fermi level. The absorption can achieve 90% in 5.50-7.10 THz, with Fermi level of graphene is 0.3 eV, while in 6.98-9.10 THz with Fermi level 0.6 eV. Furthermore, the proposed structure can be switched from reflection (>81%) to absorption (>90%) over the whole operation band, when the Fermi level of graphene varies from 0 to 0.6 eV. Besides, the proposed absorber is insensitive to the polarization and can work over a wide range of incident angle. Compared with the previous broadband absorber, our graphene based wideband terahertz absorber can enable a wide application of high performance terahertz devices, including sensors, imaging devices and electro-optic switches.

Strain-Induced Anisotropic Fermi Contour of 2D Holes and Composite Fermions

NASA Astrophysics Data System (ADS)

Jo, Insun; Rosales, K. A. V.; Mueed, M. A.; Padmanabhan, M.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.; Winkler, R.; Shayegan, M.

We present experimental and theoretical results demonstrating strain-induced Fermi contour anisotropy of two-dimensional (2D) holes and composite fermions (CFs) confined to a (001) GaAs quantum well. We apply a tunable uniaxial strain to a thinned (001) GaAs wafer, glued to a piezoelectric actuator. When the 2D holes are subjected to an in-plane uniaxial strain, their band structure and Fermi contour become anisotropic by about 30% even for a minute amount of strain, on the order of 10-4. Via measurements of commensurability oscillations, we determine the Fermi contour anisotropy for holes near zero magnetic field, and for CFs at high magnetic fields, as a function of uniaxial strain. The measured Fermi contour anisotropy of holes is consistent with the calculation results. The observed CF Fermi contour anisotropy also shows a strong dependence on the applied strain, which we compare quantitatively to that of the low-field holes. Supported by the NSF(Grants DMR-1305691, ECCS-1508925, and MRSEC DMR-1420541), the DOE Basic Energy Sciences (DE-FG02-00-ER45841), the Gordon and Betty Moore Foundation (GBMF4420), and the Keck Foundation. R. W. is supported by the NSF (DMR-1310199).

The contact of a homogeneous unitary Fermi gas

NASA Astrophysics Data System (ADS)

Mukherjee, Biswaroop; Patel, Parth; Yan, Zhenjie; Fletcher, Richard; Struck, Julian; Zwierlein, Martin

2017-04-01

The contact is a fundamental quantity that measures the strength of short-range correlations in quantum gases. As one of its most important implications, it provides a link between the microscopic two-particle correlation function at small distance and the macroscopic thermodynamic properties of the gas. In particular, pairing and superfluidity in a unitary Fermi gas can be expected to leave its mark in behavior of the contact. Here we present measurements on the temperature dependence of the contact of a unitary Fermi gas across the superfluid transition. By trapping ultracold 6Li atoms in a potential that is homogeneous in two directions and harmonic in the third, we obtain radiofrequency spectra of the homogeneous gas at a high signal-to-noise ratio. We compare our data to existing, but often mutually excluding theoretical calculations for the strongly interacting Fermi gas.

Non-Abelian fermion parity interferometry of Majorana bound states in a Fermi sea

NASA Astrophysics Data System (ADS)

Dahan, Daniel; Tanhayi Ahari, Mostafa; Ortiz, Gerardo; Seradjeh, Babak; Grosfeld, Eytan

We study the quantum dynamics of Majorana and regular fermion bound states coupled to a one-dimensional lead. The dynamics following the quench in the coupling to the lead exhibits a series of dynamical revivals as the bound state propagates in the lead and reflects from the boundaries. We show that the nature of revivals for a single Majorana bound state depends uniquely on the presence of a resonant level in the lead. When two spatially separated Majorana modes are coupled to the lead, the revivals depend only on the phase difference between their host superconductors. Remarkably, the quench in this case effectively performs a fermion-parity interferometry between Majorana bound states, revealing their unique non-Abelian braiding. Using both analytical and numerical techniques, we find the pattern of fermion parity transfers following the quench, study its evolution in the presence of disorder and interactions, and thus, ascertain the fate of Majorana in a rough Fermi sea. Work supported in part by BSF Grant No. 2014345, ISF Grant Nos. 401/12 and 1626/16, EU Seventh Framework Programme (FP7/2007-2013) Grant No. 303742, NSF CAREER Grant DMR-1350663 and the College of Arts and Sciences at Indiana University.

Strange metal transport realized by gauge/gravity duality.

PubMed

Faulkner, Thomas; Iqbal, Nabil; Liu, Hong; McGreevy, John; Vegh, David

2010-08-27

Fermi liquid theory explains the thermodynamic and transport properties of most metals. The so-called non-Fermi liquids deviate from these expectations and include exotic systems such as the strange metal phase of cuprate superconductors and heavy fermion materials near a quantum phase transition. We used the anti-de-Sitter/conformal field theory correspondence to identify a class of non-Fermi liquids; their low-energy behavior is found to be governed by a nontrivial infrared fixed point, which exhibits nonanalytic scaling behavior only in the time direction. For some representatives of this class, the resistivity has a linear temperature dependence, as is the case for strange metals.

Hydrodynamics in a Degenerate, Strongly Attractive Fermi Gas

NASA Technical Reports Server (NTRS)

Thomas, John E.; Kinast, Joseph; Hemmer, Staci; Turlapov, Andrey; O'Hara, Ken; Gehm, Mike; Granade, Stephen

2004-01-01

In summary, we use all-optical methods with evaporative cooling near a Feshbach resonance to produce a strongly interacting degenerate Fermi gas. We observe hydrodynamic behavior in the expansion dynamics. At low temperatures, collisions may not explain the expansion dynamics. We observe hydrodynamics in the trapped gas. Our observations include collisionally-damped excitation spectra at high temperature which were not discussed above. In addition, we observe weakly damped breathing modes at low temperature. The observed temperature dependence of the damping time and hydrodynamic frequency are not consistent with collisional dynamics nor with collisionless mean field interactions. These observations constitute the first evidence for superfluid hydrodynamics in a Fermi gas.

Optically induced Lifshitz transition in bilayer graphene

NASA Astrophysics Data System (ADS)

Iorsh, I. V.; Dini, K.; Kibis, O. V.; Shelykh, I. A.

2017-10-01

It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition—the abrupt change in the topology of the Fermi surface near the band edge. This effect substantially depends on the polarization of the field: The linearly polarized dressing field induces the Lifshitz transition from the quadruply connected Fermi surface to the doubly connected one, whereas the circularly polarized field induces the multicritical point where the four different Fermi topologies may coexist. As a consequence, the discussed phenomenon creates a physical basis to control the electronic properties of bilayer graphene with light.

Electronic structure and the van Hove singularity scenario in high-T(sub c)H(g)Ba2CuO(4+delta) superconductors

NASA Technical Reports Server (NTRS)

Agrawal, Bal K.; Agrawal, Savitri

1995-01-01

The electronic structure and the hole concentrations in the high Tc superconductor HgBa2CuO(4+delta) (delta = O, 1) has been investigated by employing a first principles full potential self-consistent LMTO method with the local density functional theory. The scalar relativistic effects have been considered. The hole concentrations of the Cu-d and O-p(x,y) orbitals are seen to be larger for the HgBaCuO5 system than those of the HgBaCuO4 solid. However, the van Hove singularity (vHs) induced Cu-d and O-p peak which is seen to lie comparatively away and above the Fermi level in the delta = 1 system shifts towards the Fermi level in the delta = 0 system. Thus, the superconducting behavior appears to originate from the occurrence of the vHs peak at the Fermi level. The Fermi surface nesting area in the delta = 0 compound is seen to be larger than in the delta = 1 compound. The calculation reveals that the increase in pressure on the crystal enhances the hole concentrations but without showing any optimum value, On the other hand, the vHs peak approaches to-wards the Fermi level with pressure and crosses the Fermi surface near V/Vo approximately equals 0.625 (V and Vo are the crystal volumes at high and normal pressures, respectively). Our calculated value of the bulk modulus equal to 0.626 Mbar predicts the occurrence of this crossover at about 24 GPa which is in complete agreement with the experimental value. At this pressure the compound has maximum nesting area and self-doped behavior.

Angular dependent XPS study of surface band bending on Ga-polar n-GaN

NASA Astrophysics Data System (ADS)

Huang, Rong; Liu, Tong; Zhao, Yanfei; Zhu, Yafeng; Huang, Zengli; Li, Fangsen; Liu, Jianping; Zhang, Liqun; Zhang, Shuming; Dingsun, An; Yang, Hui

2018-05-01

Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.

Superconductivity across Lifshitz transition and anomalous insulating state in surface K-dosed (Li0.8Fe0.2OH)FeSe.

PubMed

Ren, Mingqiang; Yan, Yajun; Niu, Xiaohai; Tao, Ran; Hu, Die; Peng, Rui; Xie, Binping; Zhao, Jun; Zhang, Tong; Feng, Dong-Lai

2017-07-01

In iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently, it was found that, in iron selenide (FeSe), enhanced superconductivity ( T c of more than 40 K) can be achieved via electron doping, with the Fermi surface only comprising M-centered electron pockets. By using surface K dosing, scanning tunneling microscopy/spectroscopy, and angle-resolved photoemission spectroscopy, we studied the electronic structure and superconductivity of (Li 0.8 Fe 0.2 OH)FeSe in the deep electron-doped regime. We find that a Γ-centered electron band, which originally lies above the Fermi level ( E F ), can be continuously tuned to cross E F and contribute a new electron pocket at Γ. When this Lifshitz transition occurs, the superconductivity in the M-centered electron pocket is slightly suppressed, and a possible superconducting gap with a small size (up to ~5 meV) and a dome-like doping dependence is observed on the new Γ electron pocket. Upon further K dosing, the system eventually evolves into an insulating state. Our findings provide new clues to understand superconductivity versus Fermi surface topology and the correlation effect in FeSe-based superconductors.

Stability of rhombohedral phases in vanadium at high-pressure and high-temperature: first-principles investigations

PubMed Central

Wang, Yi X.; Wu, Q.; Chen, Xiang R.; Geng, Hua Y.

2016-01-01

The pressure-induced transition of vanadium from BCC to rhombohedral structures is unique and intriguing among transition metals. In this work, the stability of these phases is revisited by using density functional theory. At finite temperatures, a novel transition of rhombohedral phases back to BCC phase induced by thermal electrons is discovered. This reentrant transition is found not driven by phonons, instead it is the electronic entropy that stabilizes the latter phase, which is totally out of expectation. Parallel to this transition, we find a peculiar and strong increase of the shear modulus C44 with increasing temperature. It is counter-intuitive in the sense that it suggests an unusual harding mechanism of vanadium by temperature. With these stability analyses, the high-pressure and finite-temperature phase diagram of vanadium is proposed. Furthermore, the dependence of the stability of RH phases on the Fermi energy and chemical environment is investigated. The results demonstrate that the position of the Fermi level has a significant impact on the phase stability, and follows the band-filling argument. Besides the Fermi surface nesting, we find that the localization/delocalization of the d orbitals also contributes to the instability of rhombohedral distortions in vanadium. PMID:27581551

Superconductivity across Lifshitz transition and anomalous insulating state in surface K–dosed (Li0.8Fe0.2OH)FeSe

PubMed Central

Ren, Mingqiang; Yan, Yajun; Niu, Xiaohai; Tao, Ran; Hu, Die; Peng, Rui; Xie, Binping; Zhao, Jun; Zhang, Tong; Feng, Dong-Lai

2017-01-01

In iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently, it was found that, in iron selenide (FeSe), enhanced superconductivity (Tc of more than 40 K) can be achieved via electron doping, with the Fermi surface only comprising M-centered electron pockets. By using surface K dosing, scanning tunneling microscopy/spectroscopy, and angle-resolved photoemission spectroscopy, we studied the electronic structure and superconductivity of (Li0.8Fe0.2OH)FeSe in the deep electron-doped regime. We find that a Γ-centered electron band, which originally lies above the Fermi level (EF), can be continuously tuned to cross EF and contribute a new electron pocket at Γ. When this Lifshitz transition occurs, the superconductivity in the M-centered electron pocket is slightly suppressed, and a possible superconducting gap with a small size (up to ~5 meV) and a dome-like doping dependence is observed on the new Γ electron pocket. Upon further K dosing, the system eventually evolves into an insulating state. Our findings provide new clues to understand superconductivity versus Fermi surface topology and the correlation effect in FeSe-based superconductors. PMID:28740865

Spectroscopic views of high-Tc superconductors

NASA Astrophysics Data System (ADS)

Wendin, Göran

1989-01-01

Recent progress in the fields of photoelectron spectroscopy, electron energy loss spectroscopy, inverse photoemission, and infrared- and optical reflectivity applied to high-Tc superconductors is analyzed in terms of correlation effects, transport properties and Fermi liquid behaviour. For the CuO2 based materials, a picture emerges of localized holes in copper 3d levels and itinerant holes in oxygen 2p-like bands. A Fermi liquid picture and a superconducting gap is indicated by angle-resolved photo-emission, infrared absorption, and NMR. A Fermi surface is indicated by positron annihilation. Infrared absorption reveals strongly frequency and temperature dependent scattering and polaronic behaviour for frequencies below 0.1 eV. Infrared absorption indicates a maximum superconducting gap of 2Δ/kBTc = 8 and suggests that ordinary samples may show a range of gaps 2 < 2Δ/kBTc < 8 resulting in commonly measured average values of 2Δ/kBTc = 5. An interesting possibility in YBaCuO, suggested by infrared reflectivity and photoconductivity measurements, is that polarons in the CuO2 planes with 0.13 eV excitation energy mediate an attractive interaction between quasi-holes in O 2p-derived conduction bands. The polarons will involve important lattice distortions even if, as is frequently assumed, magnetic polaron effects may be the essential thing.

Extracting the temperature of hot carriers in time- and angle-resolved photoemission.

PubMed

Ulstrup, Søren; Johannsen, Jens Christian; Grioni, Marco; Hofmann, Philip

2014-01-01

The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possible to track the decay of the temperature of the excited hot electrons in selected states in the Brillouin zone, and to reveal their cooling in unprecedented detail in a variety of emerging materials. It is, however, not a straightforward task to determine the temperature with high accuracy. This is mainly attributable to an a priori unknown position of the Fermi level and the fact that the shape of the Fermi edge can be severely perturbed when the state in question is crossing the Fermi energy. Here, we introduce a method that circumvents these difficulties and accurately extracts both the temperature and the position of the Fermi level for a hot carrier distribution by tracking the occupation statistics of the carriers measured in a TR-ARPES experiment.

Quantification of deep traps in nanocrystal solids, their electronic properties, and their influence on device behavior.

PubMed

Bozyigit, Deniz; Volk, Sebastian; Yarema, Olesya; Wood, Vanessa

2013-11-13

We implement three complementary techniques to quantify the number, energy, and electronic properties of trap states in nanocrystal (NC)-based devices. We demonstrate that, for a given technique, the ability to observe traps depends on the Fermi level position, highlighting the importance of a multitechnique approach that probes trap coupling to both the conduction and the valence bands. We then apply our protocol for characterizing traps to quantitatively explain the measured performances of PbS NC-based solar cells.

Changes in the adsorbate dipole layer with changing d-filling of the metal (II) (Co, Ni, Cu) phthalocyanines on Au(111).

PubMed

Xiao, Jie; Dowben, Peter A

2009-02-04

In combined photoemission and inverse photoemission spectroscopy studies, we observe changes in the metal phthalocyanine molecular orbital offsets with respect to the conducting gold substrate Fermi level, with the changing d-electron filling of the metal (II) (Co, Ni, Cu) phthalocyanines. The implication is that the interfacial dipole layer depends upon the choice of metal (Co, Ni, Cu) centers within the metal (II) phthalocyanines adsorbed on Au(111).

Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Nashchekina, O. N.; Meriuts, A. V.; Dresselhaus, M. S.

2017-07-01

Bi2Te3 compound and Bi2Te3-based solid solutions have attracted much attention as promising thermoelectric materials for refrigerating devices. The possibility of enhancing the thermoelectric efficiency in low-dimensional structures has stimulated studies of Bi2Te3 thin films. Now, interest in studying the transport properties of Bi2Te3 has grown sharply due to the observation of special properties characteristic of three-dimensional (3D) topological insulators in Bi2Te3. One of the possible manifestations of quantum size effects in two-dimensional structures is an oscillatory behavior of the dependences of transport properties on film thickness, d. The goal of this work is to summarize our earlier experimental results on the d-dependences of transport properties of Bi2Te3 thin films obtained by thermal evaporation in a vacuum on glass substrates, and to present our new results of theoretical calculations of the oscillations periods within the framework of the model of an infinitely deep potential well, which takes into account the dependence of the Fermi energy on d and the contribution of all energy subbands below the Fermi level to the conductivity. On the basis of the data obtained, some general regularities and specificity of the quantum size effects manifestation in 3D topological insulators are established.

Intense conductivity suppression by edge defects in zigzag MoS2 and WSe2 nanoribbons: a density functional based tight-binding study.

PubMed

Silva, F W N; Costa, A L M T; Liu, Lei; Barros, E B

2016-11-04

The effects of edge vacancies on the electron transport properties of zigzag MoS2/WSe2 nanoribbons are studied using a density functional theory (DFT)-based tight-binding model with a sp(3)d(5) basis set for the electronic structure calculation and applying the Landauer-Büttiker approach for the electronic transport. Our results show that the presence of a single edge vacancy, with a missing MoS2/WSe2 triplet, is enough to suppress the conductance of the system by almost one half for most energies around the Fermi level. Furthermore, the presence of other single defects along the same edge has little effect on the overall conductance, indicating that the conductance of that particular edge has been strongly suppressed by the first defect. The presence of another defect on the opposite edge further suppresses the quantum conductance, independently of the relative position between the two defects in opposite edges. The introduction of other defects cause the suppression to be energy dependent, leading to conductance peaks which depend on the geometry of the edges. The strong conductance dependence on the presence of edge defects is corroborated by DFT calculations using SIESTA, which show that the electronic bands near the Fermi energy are strongly localized at the edge.

Doping dependence of charge order in electron-doped cuprate superconductors

NASA Astrophysics Data System (ADS)

Mou, Yingping; Feng, Shiping

2017-12-01

In the recent studies of the unconventional physics in cuprate superconductors, one of the central issues is the interplay between charge order and superconductivity. Here the mechanism of the charge-order formation in the electron-doped cuprate superconductors is investigated based on the t-J model. The experimentally observed momentum dependence of the electron quasiparticle scattering rate is qualitatively reproduced, where the scattering rate is highly anisotropic in momentum space, and is intriguingly related to the charge-order gap. Although the scattering strength appears to be weakest at the hot spots, the scattering in the antinodal region is stronger than that in the nodal region, which leads to the original electron Fermi surface is broken up into the Fermi pockets and their coexistence with the Fermi arcs located around the nodal region. In particular, this electron Fermi surface instability drives the charge-order correlation, with the charge-order wave vector that matches well with the wave vector connecting the hot spots, as the charge-order correlation in the hole-doped counterparts. However, in a striking contrast to the hole-doped case, the charge-order wave vector in the electron-doped side increases in magnitude with the electron doping. The theory also shows the existence of a quantitative link between the single-electron fermiology and the collective response of the electron density.

Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, G. D.; Chou, H.; Yang, K. S.

2016-04-25

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence bandmore » UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.« less

Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers

NASA Astrophysics Data System (ADS)

Reddy, Pramod; Kaess, Felix; Tweedie, James; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

2017-10-01

Compensating point defect reduction in wide bandgap semiconductors is possible by above bandgap illumination based defect quasi Fermi level (dQFL) control. The point defect control technique employs excess minority carriers that influence the dQFL of the compensator, increase the corresponding defect formation energy, and consequently are responsible for point defect reduction. Previous studies on various defects in GaN and AlGaN have shown good agreement with the theoretical model, but no direct evidence for the role of minority carriers was provided. In this work, we provide direct evidence for the role of minority carriers in reducing point defects by studying the predicted increase in work done against defect (CN-1) formation with the decrease in the Fermi level (free carrier concentration) in Si doped GaN at a constant illumination intensity. Comparative defect photoluminescence measurements on illuminated and dark regions of GaN show an excellent quantitative agreement with the theory by exhibiting a greater reduction in yellow luminescence attributed to CN-1 at lower doping, thereby providing conclusive evidence for the role of the minority carriers in Fermi level control-based point defect reduction.

Fermi acceleration in time-dependent billiards: theory of the velocity diffusion in conformally breathing fully chaotic billiards

NASA Astrophysics Data System (ADS)

Batistić, Benjamin; Robnik, Marko

2011-09-01

We study aspects of the Fermi acceleration (the unbounded growth of the energy) in a certain class of time-dependent 2D billiards. Specifically, we look at the conformally breathing billiards (periodic oscillation of the boundary which preserves the shape of the billiard at all times), which are fully chaotic as static (frozen) billiards, and we show that for large velocities around v0 and for not too long times, we observe just normal diffusion of the velocity as a function of the physical (continuous) time, around v0. However, the diffusion is not homogeneous, as the diffusion constant D depends on v0 as a power law D∝1/v30. Taking this into account, we show that to the leading order the average velocity v(n) as a function of the number of collisions n obeys a power law v∝n1/6 thus, the Fermi acceleration exponent is β = 1/6, which is in excellent agreement with the numerical calculations of the fully chaotic oval billiard, the Sinai billiard and the cardioid billiard. The error of the velocity estimates is of the order 1/v2. Thus, the higher the velocity, the better our analytic approximation. Moreover, we derive the underlying universal equation of the velocity dynamics of the time-dependent conformally breathing billiards, correct up to and including the order 1/v in the regime of the large velocity of the particle v. This universal equation does not depend on the dynamical properties of the system (integrability, ergodicity, chaoticity). We present the results of the numerical simulations for three billiards in complete agreement with the theory. We believe that this is a first step towards theoretical understanding of the power law growth and the Fermi acceleration exponents in 2D billiards, although our theory is so far specialized to the conformally breathing fully chaotic billiards.

Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

NASA Astrophysics Data System (ADS)

Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

2017-07-01

InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

Effect of lateral size and thickness on the electronic structure and optical properties of quasi two-dimensional CdSe and CdS nanoplatelets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bose, Sumanta; Fan, W. J., E-mail: ewjfan@ntu.edu.sg; Zhang, D. H.

2016-04-14

The effect of lateral size and vertical thickness of CdSe and CdS nanoplatelets (NPLs) on their electronic structure and optical properties are investigated using an effective-mass envelope function theory based on the 8-band k ⋅ p model with valence force field considerations. Volumetrically larger NPLs have lower photon emission energy due to limited quantum confinement, but a greater transition matrix element (TME) due to larger electron-hole wavefunction overlap. The optical gain characteristics depend on several factors such as TME, Fermi factor, carrier density, NPL dimensions, material composition, and dephasing rate. There is a red shift in the peak position, moremore » so with an increase in thickness than lateral size. For an increasing carrier density, the gain spectrum undergoes a slight blue shift due to band filling effect. For a fixed carrier density, the Fermi factor is higher for volumetrically larger NPLs and so is the difference between the quasi-Fermi level separation and the effective bandgap. The transparency injection carrier density (and thus input current density threshold) is dimension dependent and falls for volumetrically larger NPLs, as they can attain the requisite exciton count for transparency with a relatively lower density. Between CdSe and CdS, CdSe has lower emission energy due to smaller bandgap, but a higher TME due to lower effective mass. CdS, however, has a higher so hole contribution due to a lower spin-orbit splitting energy. Both CdSe and CdS NPLs are suitable candidates for short-wavelength LEDs and lasers in the visible spectrum, but CdSe is expected to exhibit better optical performance.« less

Fermi Surface as a Driver for the Shape-Memory Effect in AuZn

NASA Astrophysics Data System (ADS)

Lashley, Jason

2005-03-01

Martensites are materials that undergo diffusionless, solid-state transitions. The martensitic transition yields properties that depend on the history of the material and if reversible can allow it to recover its previous shape after plastic deformation. This is known as the shape-memory effect (SME). We have succeeded in identifying the operative electronic mechanism responsible for the martensitic transition in the shape-memory alloy AuZn by using Fermi-surface measurements (de Haas-van Alphen oscillations) and band-structure calculations. Our findings suggest that electronic band structure gives rise to special features on the Fermi surface that is important to consider in the design of SME alloys.

Thermodynamics of the relativistic Fermi gas in D dimensions

NASA Astrophysics Data System (ADS)

Sevilla, Francisco J.; Piña, Omar

2017-09-01

The influence of spatial dimensionality and particle-antiparticle pair production on the thermodynamic properties of the relativistic Fermi gas, at finite chemical potential, is studied. Resembling a "phase transition", qualitatively different behaviors of the thermodynamic susceptibilities, namely the isothermal compressibility and the specific heat, are markedly observed at different temperature regimes as function of the system dimensionality and of the rest mass of the particles. A minimum in the temperature dependence of the isothermal compressibility marks a characteristic temperature, in the range of tenths of the Fermi temperature, at which the system transit from a "normal" phase, to a phase where the gas compressibility grows as a power law of the temperature.

2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices.

PubMed

Singh, S L; Singh, S B; Ghatak, K P

2018-04-01

In this paper an attempt is made to study the 2D Fermi Level Mass (FLM) in accumulation and inversion layers of nano MOSFET devices made of nonlinear optical, III-V, ternary, Quaternary, II-VI, IV-VI, Ge and stressed materials by formulating 2D carrier dispersion laws on the basis of k → ⋅ p → ⋅ formalism and considering the energy band constants of a particular material. It is observed taking accumulation and inversion layers of Cd3As2, CdGeAs2, InSb, Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP, CdS, GaSb and Ge as examples that the FLM depends on sub band index for nano MOSFET devices made of Cd3As2 and CdGeAs2 materials which is the characteristic features such 2D systems. Besides, the FLM depends on the scattering potential in all the cases and the same mass changes with increasing surface electric field. The FLM exists in the band gap which is impossible without heavy doping.

International Conference of Defects in Semiconductors (19th), ICDS, Held in Aveiro, Portugal on July 21-25, 1997, Pt. 3

DTIC Science & Technology

1998-01-23

2 1 ■1 WWW .; 0 100 200 300 400 0 100 200 300 400 0 100 200 300 400 co (Mrad/s) Fig. 1 Characteristic EFG corresponding to type II...results for 1/T -» 0. Materials Science Forum Vols. 258-263 1355 ent, and the quasi-Fermi level, eF, is pinned to the DX level position, eDX . eB...denoted by E plus index. For single electron processes, s = E). The pressure dependence of eDX is shown by squares in Fig. 4. The dashed line shows the

Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications

PubMed Central

Su, Ting; Zhang, Haifeng

2017-01-01

Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on the voltage and duration applied to the copper-doped ZnO films by Kelvin probe force microscopy. It is found that the Fermi Level of the 8 at.% Cu-doped ZnO films shifted by 0.53 eV comparing to undoped ZnO films. This shift indicates significant change in the electronic structure and energy balance in Cu-doped ZnO films. The Fermi Level (work function) of zinc oxide films can be tuned by Cu doping, which are important for developing this functional material. In addition, Kelvin probe force microscopy measurements demonstrate that the nature of contact at Pt-coated tip/ZnO:Cu interface is changed from Schottky contact to Ohmic contact by increasing sufficient amount of Cu ions. The charge trapping property of the ZnO films enhance greatly by Cu doping (~10 at.%). The improved stable bipolar charge trapping properties indicate that copper-doped ZnO films are promising for nonvolatile memory applications. PMID:28135335

Investigation of Material Gain of In0.90Ga0.10As0.59P0.41/InP Lasing Nano-Heregostructure

NASA Astrophysics Data System (ADS)

Yadav, Rashmi; Lal, Pyare; Rahman, F.; Dalela, S.; Alvi, P. A.

2014-02-01

In this paper, we have proposed a step separate confinement heterostructure (SCH) based lasing nano-heterostructure In0.90Ga0.10As0.59P0.41/InP consisting of single quantum well (SQW) and investigated material gain theoretically within TE and TM polarization modes. In addition, the quasi Fermi levels in the conduction and valence bands along with other lasing characteristics like anti-guiding factor, refractive index change with carrier density and differential gain have also been investigated and reported. Moreover, the behavior of quasi Fermi levels in respective bands has also been correlated with the material gain. Strain dependent study on material gain and refractive index change has also been reported. Interestingly, strain has been reported to play a very important role in shifting the lasing wavelength of TE mode to TM mode. The results investigated in the work suggest that the proposed unstrained nano-heterostructure is very suitable as a source for optical fiber based communication systems due to its lasing wavelengths achieved at 1.35 μm within TM mode, while 1.40 μm within TE mode.

Sub-band-gap absorption in Ga2O3

NASA Astrophysics Data System (ADS)

Peelaers, Hartwin; Van de Walle, Chris G.

2017-10-01

β-Ga2O3 is a transparent conducting oxide that, due to its large bandgap of 4.8 eV, exhibits transparency into the UV. However, the free carriers that enable the conductivity can absorb light. We study the effect of free carriers on the properties of Ga2O3 using hybrid density functional theory. The presence of free carriers leads to sub-band-gap absorption and a Burstein-Moss shift in the onset of absorption. We find that for a concentration of 1020 carriers, the Fermi level is located 0.23 eV above the conduction-band minimum. This leads to an increase in the electron effective mass from 0.27-0.28 me to 0.35-0.37 me and a sub-band-gap absorption band with a peak value of 0.6 × 103 cm-1 at 3.37 eV for light polarized along the x or z direction. Both across-the-gap and free-carrier absorption depend strongly on the polarization of the incoming light. We also provide parametrizations of the conduction-band shape and the effective mass as a function of the Fermi level.

Schottky-barrier-free contacts with two-dimensional semiconductors by surface-engineered MXenes

DOE PAGES

Liu, Yuanyue; Xiao, Hai; Goddard, III, William A.

2016-11-22

Two-dimensional (2D) metal carbides and nitrides, called MXenes, have attracted great interest for applications such as energy storage. Here we demonstrate their potential as Schottky-barrier-free metal contacts to 2D semiconductors, providing a solution to the contact-resistance problem in 2D electronics. Based on first principles calculations, we find that the surface chemistry strongly affects the Fermi level of MXenes: O termination always increases the work function with respect to that of bare surface, OH always decreases it, while F exhibits either trend depending on the specific material. This phenomenon originates from the effect of surface dipoles, which together with the weakmore » Fermi level pinning, enable Schottky-barrier-free hole (or electron) injection into 2D semiconductors through van der Waals junctions with some of the O-terminated (or all the OH-terminated) MXenes. Furthermore, we suggest synthetic routes to control the surface terminations based on the calculated formation energies. Finally, this study enhances the understanding of the correlation between surface chemistry and electronic/transport properties of 2D materials, and also gives practical predictions for improving 2D electronics.« less

Spin transistor based on pure nonlocal Andreev reflection in EuO-graphene/superconductor/EuO-graphene nanostructure

NASA Astrophysics Data System (ADS)

Ang, Yee Sin; Ang, Lay Kee; Zhang, Chao; Ma, Zhongshui

In graphene-magnetic-insulator hybrid structure such as graphene-Europium-oxide, proximity induced exchange interaction opens up a spin-dependent bandgap and spin splitting in the Dirac band. We show that such band topology allows pure crossed Andreev reflection to be generated exclusively without the parasitic local Andreev reflection and elastic cotunnelling over a wide range of bias and Fermi levels. We model the charge transport in an EuO-graphene/superconductor/EuO-graphene three-terminal device and found that the pure non-local conductance exhibits rapid on/off switching characteristic with a minimal subthreshold swing of ~ 20 mV. Non-local conductance oscillation is observed when the Fermi levels in the superconducting lead is varied. The oscillatory behavior is directly related to the quasiparticle propagation in the superconducting lead and hence can be used as a tool to probe the subgap quasiparticle mode in superconducting graphene. The non-local current is 100% spin-polarized and is highly tunable in our proposed device. This opens up the possibility of highly tunable graphene-based spin transistor that operates purely in the non-local transport regime.

Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simonds, Brian J.; Kheraj, Vipul; Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007

2015-06-14

Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results.more » The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.« less

Constraining Dark Matter Models from a Combined Analysis of Milky Way Satellites with the Fermi Large Area Telescope

NASA Technical Reports Server (NTRS)

Ackermann, M.; Ajello, M.; Albert, A.; Atwood, W. B.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Bechtol, K.; Bellazzini, R.;

SmB6 electron-phonon coupling constant from time- and angle-resolved photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Sterzi, A.; Crepaldi, A.; Cilento, F.; Manzoni, G.; Frantzeskakis, E.; Zacchigna, M.; van Heumen, E.; Huang, Y. K.; Golden, M. S.; Parmigiani, F.

2016-08-01

SmB6 is a mixed valence Kondo system resulting from the hybridization between localized f electrons and delocalized d electrons. We have investigated its out-of-equilibrium electron dynamics by means of time- and angle-resolved photoelectron spectroscopy. The transient electronic population above the Fermi level can be described by a time-dependent Fermi-Dirac distribution. By solving a two-temperature model that well reproduces the relaxation dynamics of the effective electronic temperature, we estimate the electron-phonon coupling constant λ to range from 0.13 ±0.03 to 0.04 ±0.01 . These extremes are obtained assuming a coupling of the electrons with either a phonon mode at 10 or 19 meV. A realistic value of the average phonon energy will give an actual value of λ within this range. Our results provide an experimental report on the material electron-phonon coupling, contributing to both the electronic transport and the macroscopic thermodynamic properties of SmB6.

Constraining Dark Matter Models from a Combined Analysis of Milky Way Satellites with the Fermi Large Area Telescope

NASA Astrophysics Data System (ADS)

Ackermann, M.; Ajello, M.; Albert, A.; Atwood, W. B.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Bechtol, K.; Bellazzini, R.; Berenji, B.; Blandford, R. D.; Bloom, E. D.; Bonamente, E.; Borgland, A. W.; Bregeon, J.; Brigida, M.; Bruel, P.; Buehler, R.; Burnett, T. H.; Buson, S.; Caliandro, G. A.; Cameron, R. A.; Cañadas, B.; Caraveo, P. A.; Casandjian, J. M.; Cecchi, C.; Charles, E.; Chekhtman, A.; Chiang, J.; Ciprini, S.; Claus, R.; Cohen-Tanugi, J.; Conrad, J.; Cutini, S.; de Angelis, A.; de Palma, F.; Dermer, C. D.; Digel, S. W.; Do Couto E Silva, E.; Drell, P. S.; Drlica-Wagner, A.; Falletti, L.; Favuzzi, C.; Fegan, S. J.; Ferrara, E. C.; Fukazawa, Y.; Funk, S.; Fusco, P.; Gargano, F.; Gasparrini, D.; Gehrels, N.; Germani, S.; Giglietto, N.; Giordano, F.; Giroletti, M.; Glanzman, T.; Godfrey, G.; Grenier, I. A.; Guiriec, S.; Gustafsson, M.; Hadasch, D.; Hayashida, M.; Hays, E.; Hughes, R. E.; Jeltema, T. E.; Jóhannesson, G.; Johnson, R. P.; Johnson, A. S.; Kamae, T.; Katagiri, H.; Kataoka, J.; Knödlseder, J.; Kuss, M.; Lande, J.; Latronico, L.; Lionetto, A. M.; Llena Garde, M.; Longo, F.; Loparco, F.; Lott, B.; Lovellette, M. N.; Lubrano, P.; Madejski, G. M.; Mazziotta, M. N.; McEnery, J. E.; Mehault, J.; Michelson, P. F.; Mitthumsiri, W.; Mizuno, T.; Monte, C.; Monzani, M. E.; Morselli, A.; Moskalenko, I. V.; Murgia, S.; Naumann-Godo, M.; Norris, J. P.; Nuss, E.; Ohsugi, T.; Okumura, A.; Omodei, N.; Orlando, E.; Ormes, J. F.; Ozaki, M.; Paneque, D.; Parent, D.; Pesce-Rollins, M.; Pierbattista, M.; Piron, F.; Pivato, G.; Porter, T. A.; Profumo, S.; Rainò, S.; Razzano, M.; Reimer, A.; Reimer, O.; Ritz, S.; Roth, M.; Sadrozinski, H. F.-W.; Sbarra, C.; Scargle, J. D.; Schalk, T. L.; Sgrò, C.; Siskind, E. J.; Spandre, G.; Spinelli, P.; Strigari, L.; Suson, D. J.; Tajima, H.; Takahashi, H.; Tanaka, T.; Thayer, J. G.; Thayer, J. B.; Thompson, D. J.; Tibaldo, L.; Tinivella, M.; Torres, D. F.; Troja, E.; Uchiyama, Y.; Vandenbroucke, J.; Vasileiou, V.; Vianello, G.; Vitale, V.; Waite, A. P.; Wang, P.; Winer, B. L.; Wood, K. S.; Wood, M.; Yang, Z.; Zimmer, S.; Kaplinghat, M.; Martinez, G. D.

2011-12-01

Satellite galaxies of the Milky Way are among the most promising targets for dark matter searches in gamma rays. We present a search for dark matter consisting of weakly interacting massive particles, applying a joint likelihood analysis to 10 satellite galaxies with 24 months of data of the Fermi Large Area Telescope. No dark matter signal is detected. Including the uncertainty in the dark matter distribution, robust upper limits are placed on dark matter annihilation cross sections. The 95% confidence level upper limits range from about 10-26cm3s-1 at 5 GeV to about 5×10-23cm3s-1 at 1 TeV, depending on the dark matter annihilation final state. For the first time, using gamma rays, we are able to rule out models with the most generic cross section (˜3×10-26cm3s-1 for a purely s-wave cross section), without assuming additional boost factors.

Topological π Junctions from Crossed Andreev Reflection in the Quantum Hall Regime

NASA Astrophysics Data System (ADS)

Finocchiaro, F.; Guinea, F.; San-Jose, P.

2018-03-01

We consider a two-dimensional electron gas (2DEG) in the quantum Hall regime in the presence of a Zeeman field, with the Fermi level tuned to a filling factor of ν =1 . We show that, in the presence of spin-orbit coupling, contacting the 2DEG with a narrow strip of an s -wave superconductor produces a topological superconducting gap along the contact as a result of crossed Andreev reflection (CAR) processes across the strip. The sign of the topological gap, controlled by the CAR amplitude, depends periodically on the Fermi wavelength and strip width and can be externally tuned. An interface between two halves of a long strip with topological gaps of opposite sign implements a robust π junction, hosting a pair of Majorana zero modes that do not split despite their overlap. We show that such a configuration can be exploited to perform protected non-Abelian tunnel-braid operations without any fine tuning.

Evidence for carrier localization in the pseudogap state of cuprate superconductors from coherent quench experiments

PubMed Central

Madan, I.; Kurosawa, T.; Toda, Y.; Oda, M.; Mertelj, T.; Mihailovic, D.

2015-01-01

A ‘pseudogap' was introduced by Mott to describe a state of matter that has a minimum in the density of states at the Fermi level, deep enough for states to become localized. It can arise either from Coulomb repulsion between electrons, and/or incipient charge or spin order. Here we employ ultrafast spectroscopy to study dynamical properties of the normal to pseudogap state transition in the prototype high-temperature superconductor Bi2Sr2CaCu2O8+δ. We perform a systematic temperature and doping dependence study of the pseudogap photodestruction and recovery in coherent quench experiments, revealing marked absence of critical behaviour of the elementary excitations, which implies an absence of collective electronic ordering beyond a few coherence lengths on short timescales. The data imply ultrafast carrier localization into a textured polaronic state arising from a competing Coulomb interaction and lattice strain, enhanced by a Fermi surface instability. PMID:25891310

Emptying Dirac valleys in bismuth using high magnetic fields

DOE PAGES

Zhu, Zengwei; Wang, Jinhua; Zuo, Huakun; ...

2017-05-19

The Fermi surface of elemental bismuth consists of three small rotationally equivalent electron pockets, offering a valley degree of freedom to charge carriers. A relatively small magnetic field can confine electrons to their lowest Landau level. This is the quantum limit attained in other dilute metals upon application of sufficiently strong magnetic field. Here in this paper we report on the observation of another threshold magnetic field never encountered before in any other solid. Above this field, B empty, one or two valleys become totally empty. Drying up a Fermi sea by magnetic field in the Brillouin zone leads tomore » a manyfold enhancement in electric conductance. We trace the origin of the large drop in magnetoresistance across B empty to transfer of carriers between valleys with highly anisotropic mobilities. The non-interacting picture of electrons with field-dependent mobility explains most results but the Coulomb interaction may play a role in shaping the fine details.« less

Constraining Dark Matter Models from a Combined Analysis of Milky Way Satellites with the Fermi Large Area Telescope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.

Satellite galaxies of the Milky Way are among the most promising targets for dark matter searches in gamma rays. We present a search for dark matter consisting of weakly interacting massive particles, applying a joint likelihood analysis to 10 satellite galaxies with 24 months of data of the Fermi Large Area Telescope. No dark matter signal is detected. Including the uncertainty in the dark matter distribution, robust upper limits are placed on dark matter annihilation cross sections. The 95% con dence level upper limits range from about 10 -26 cm3s -1 at 5 GeV to about 5 X10 -23 cm3smore » -1 at 1 TeV, depending on the dark matter annihilation nal state. For the rst time, using gamma rays, we are able to rule out models with the most generic cross section (~ 3 X 10 -26 cm 3s -1 for a purely s-wave cross section), without assuming additional boost factors.« less

Constraining Dark Matter Models from a Combined Analysis of Milky Way Satellites with the Fermi Large Area Telescope

DOE PAGES

Ackermann, M.

2011-12-01

Satellite galaxies of the Milky Way are among the most promising targets for dark matter searches in gamma rays. We present a search for dark matter consisting of weakly interacting massive particles, applying a joint likelihood analysis to 10 satellite galaxies with 24 months of data of the Fermi Large Area Telescope. No dark matter signal is detected. Including the uncertainty in the dark matter distribution, robust upper limits are placed on dark matter annihilation cross sections. The 95% con dence level upper limits range from about 10 -26 cm3s -1 at 5 GeV to about 5 X10 -23 cm3smore » -1 at 1 TeV, depending on the dark matter annihilation nal state. For the rst time, using gamma rays, we are able to rule out models with the most generic cross section (~ 3 X 10 -26 cm 3s -1 for a purely s-wave cross section), without assuming additional boost factors.« less

Bulk Fermi surface of the Weyl type-II semimetallic candidate γ - MoTe 2

DOE PAGES

Rhodes, D.; Schönemann, R.; Aryal, N.; ...

2017-10-17

The electronic structure of semi-metallic transition-metal dichalcogenides, such as WTemore » $$_2$$ and orthorhombic $$\\gamma-$$MoTe$$_2$$, are claimed to contain pairs of Weyl points or linearly touching electron and hole pockets associated with a non-trivial Chern number. For this reason, these compounds were recently claimed to conform to a new class, deemed type-II, of Weyl semi-metallic systems. A series of angle resolved photoemission experiments (ARPES) claim a broad agreement with these predictions detecting, for example, topological Fermi arcs at the surface of these crystals. We synthesized single-crystals of semi-metallic MoTe$$_2$$ through a Te flux method to validate these predictions through measurements of its bulk Fermi surface (FS) via quantum oscillatory phenomena. We find that the superconducting transition temperature of $$\\gamma-$$MoTe$$_2$$ depends on disorder as quantified by the ratio between the room- and low-temperature resistivities, suggesting the possibility of an unconventional superconducting pairing symmetry. Similarly to WTe$$_2$$, the magnetoresistivity of $$\\gamma-$$MoTe$$_2$$ does not saturate at high magnetic fields and can easily surpass $$10^{6}$$ \\%. Remarkably, the analysis of the de Haas-van Alphen (dHvA) signal superimposed onto the magnetic torque, indicates that the geometry of its FS is markedly distinct from the calculated one. The dHvA signal also reveals that the FS is affected by the Zeeman-effect precluding the extraction of the Berry-phase. A direct comparison between the previous ARPES studies and density-functional-theory (DFT) calculations reveals a disagreement in the position of the valence bands relative to the Fermi level $$\\varepsilon_F$$. Here in this paper, we show that a shift of the DFT valence bands relative to $$\\varepsilon_F$$, in order to match the ARPES observations, and of the DFT electron bands to explain some of the observed dHvA frequencies, leads to a good agreement between the calculations and the angular dependence of the FS cross-sectional areas observed experimentally. However, this relative displacement between electron- and hole-bands eliminates their crossings and, therefore, the Weyl type-II points predicted for $$\\gamma-$$MoTe$$_2$$« less

Bulk Fermi surface of the Weyl type-II semimetallic candidate γ -MoTe2

NASA Astrophysics Data System (ADS)

Rhodes, D.; Schönemann, R.; Aryal, N.; Zhou, Q.; Zhang, Q. R.; Kampert, E.; Chiu, Y.-C.; Lai, Y.; Shimura, Y.; McCandless, G. T.; Chan, J. Y.; Paley, D. W.; Lee, J.; Finke, A. D.; Ruff, J. P. C.; Das, S.; Manousakis, E.; Balicas, L.

2017-10-01

The electronic structure of semimetallic transition-metal dichalcogenides, such as WTe2 and orthorhombic γ -MoTe2 , are claimed to contain pairs of Weyl points or linearly touching electron and hole pockets associated with a nontrivial Chern number. For this reason, these compounds were recently claimed to conform to a new class, deemed type-II, of Weyl semimetallic systems. A series of angle-resolved photoemission experiments (ARPES) claim a broad agreement with these predictions detecting, for example, Fermi arcs at the surface of these crystals. We synthesized single crystals of semimetallic MoTe2 through a Te flux method to validate these predictions through measurements of its bulk Fermi surface (FS) via quantum oscillatory phenomena. We find that the superconducting transition temperature of γ -MoTe2 depends on disorder as quantified by the ratio between the room- and low-temperature resistivities, suggesting the possibility of an unconventional superconducting pairing symmetry. Similarly to WTe2, the magnetoresistivity of γ -MoTe2 does not saturate at high magnetic fields and can easily surpass 106%. Remarkably, the analysis of the de Haas-van Alphen (dHvA) signal superimposed onto the magnetic torque indicates that the geometry of its FS is markedly distinct from the calculated one. The dHvA signal also reveals that the FS is affected by the Zeeman effect precluding the extraction of the Berry phase. A direct comparison between the previous ARPES studies and density-functional-theory (DFT) calculations reveals a disagreement in the position of the valence bands relative to the Fermi level ɛF. Here, we show that a shift of the DFT valence bands relative to ɛF, in order to match the ARPES observations, and of the DFT electron bands to explain some of the observed dHvA frequencies, leads to a good agreement between the calculations and the angular dependence of the FS cross-sectional areas observed experimentally. However, this relative displacement between electron and hole bands eliminates their crossings and, therefore, the Weyl type-II points predicted for γ -MoTe2 .

Thermal transitions, pseudogap behavior, and BCS-BEC crossover in Fermi-Fermi mixtures

NASA Astrophysics Data System (ADS)

Karmakar, Madhuparna

2018-03-01

We study the mass imbalanced Fermi-Fermi mixture within the framework of a two-dimensional lattice fermion model. Based on the thermodynamic and species-dependent quasiparticle behavior, we map out the finite-temperature phase diagram of this system and show that unlike the balanced Fermi superfluid, there are now two different pseudogap regimes as PG-I and PG-II. While within the PG-I regime both the fermionic species are pseudogapped, PG-II corresponds to the regime where pseudogap feature survives only in the light species. We believe that the single-particle spectral features that we discuss in this paper are observable through the species-resolved radio-frequency spectroscopy and momentum-resolved photoemission spectroscopy measurements on systems such as 6Li-40K mixture. We further investigate the interplay between the population and mass imbalances and report that at a fixed population imbalance, the BCS-BEC crossover in a Fermi-Fermi mixture would require a critical interaction (Uc) for the realization of the uniform superfluid state. The effect of imbalance in mass on the exotic Fulde-Ferrell-Larkin-Ovchinnikov superfluid phase has been probed in detail in terms of the thermodynamic and quasiparticle behavior of this phase. It has been observed that in spite of the s -wave symmetry of the pairing field, a nodal superfluid gap is realized in the Larkin-Ovchinnikov regime. Our results on the various thermal scales and regimes are expected to serve as benchmarks for the experimental observations on 6Li-40K mixture.

Core filling and snaking instability of dark solitons in spin-imbalanced superfluid Fermi gases

NASA Astrophysics Data System (ADS)

Reichl, Matthew D.; Mueller, Erich J.

2017-05-01

We use the time-dependent Bogoliubov-de Gennes equations to study dark solitons in three-dimensional spin-imbalanced superfluid Fermi gases. We explore how the shape and dynamics of dark solitons are altered by the presence of excess unpaired spins which fill their low-density core. The unpaired particles broaden the solitons and suppress the transverse snake instability. We discuss ways of observing these phenomena in cold-atom experiments.

NMR study of B-2p Fermi-level density of states in the transition metal diborides

NASA Astrophysics Data System (ADS)

Lue, C. S.; Lai, W. J.

2005-04-01

We present a systematic study of the AlB2-type transition metal diborides by measuring the 11B NMR spin-lattice relaxation rate on TiB2, VB2, ZrB2, NbB2, HfB2, as well as TaB2. For all studied materials, the observed relaxation at B nuclei is mainly due to the p-electrons. The comparison with theoretical calculations allows the experimental determination of the partial B-2p Fermi-level density of states (DOS). In addition, the extracted B-2p Fermi-level DOS values in TiB2, ZrB2, and HfB are consistently smaller than in VB2, NbB2, and TaB2. We connect this trend to the rigid-band scenario raised by band structure calculations.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

NASA Astrophysics Data System (ADS)

Bryan, Zachary; Hoffmann, Marc; Tweedie, James; Kirste, Ronny; Callsen, Gordon; Bryan, Isaac; Rice, Anthony; Bobea, Milena; Mita, Seiji; Xie, Jinqiao; Sitar, Zlatko; Collazo, Ramón

2013-05-01

In this study, Fermi level control of point defects during metalorganic chemical vapor deposition (MOCVD) of Mg-doped GaN has been demonstrated by above-bandgap illumination. Resistivity and photoluminescence (PL) measurements are used to investigate the Mg dopant activation of samples with Mg concentration of 2 × 1019 cm-3 grown with and without exposure to ultraviolet (UV) illumination. Samples grown under UV illumination have five orders of magnitude lower resistivity values compared with typical unannealed GaN:Mg samples. The PL spectra of samples grown with UV exposure are similar to the spectra of those grown without UV exposure that were subsequently annealed, indicating a different incorporation of compensating defects during growth. Based on PL and resistivity measurements we show that Fermi level control of point defects during growth of III-nitrides is feasible.

Polaron-to-Polaron Transitions in the Radio-Frequency Spectrum of a Quasi-Two-Dimensional Fermi Gas

NASA Astrophysics Data System (ADS)

Zhang, Y.; Ong, W.; Arakelyan, I.; Thomas, J. E.

2012-06-01

We measure radio-frequency spectra for a two-component mixture of a Li6 atomic Fermi gas in a quasi-two-dimensional regime with the Fermi energy comparable to the energy level spacing in the tightly confining potential. Near the Feshbach resonance, we find that the observed resonances do not correspond to transitions between confinement-induced dimers. The spectral shifts can be fit by assuming transitions between noninteracting polaron states in two dimensions.

Electrically Tunable Goos-Hänchen Effect with Graphene in the Terahertz Regime

DOE PAGES

Fan, Yuancheng; Shen, Nian-Hai; Zhang, Fuli; ...

2016-07-14

Goos-Hänchen (G-H) effect is of great interest in the manipulation of optical beams. However, it is still fairly challenging to attain efficient controls of the G-H shift for diverse applications. Here, we propose a mechanism to realize tunable G-H shift in the terahertz regime with electrically controllable graphene. Taking monolayer graphene covered epsilon-near-zero metamaterial as a planar model system, it is found that the G-H shift for the orthogonal s-polarized and p-polarized terahertz beams at oblique incidence are positive and negative, respectively. The G-H shift can be modified substantially by electrically controlling the Fermi energy of the monolayer graphene. Reversely,more » the Fermi energy dependent G-H effect can also be used as a strategy for measuring the doping level of graphene. In addition, the G-H shifts of the system are of strong frequency-dependence at oblique angles of incidence, therefore the proposed graphene hybrid system can potentially be used for the generation of terahertz “rainbow”, a flat analog of the dispersive prism in optics. The proposed scheme of hybrid system involving graphene for dynamic control of G-H shift will have potential applications in the manipulation of terahertz waves.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiang, Z.; Lawson, B.; Asaba, T.

The Kondo insulator samarium hexaboride (SmB 6) has been intensely studied in recent years as a potential candidate of a strongly correlated topological insulator. One of the most exciting phenomena observed in SmB 6 is the clear quantum oscillations appearing in magnetic torque at a low temperature despite the insulating behavior in resistance. These quantum oscillations show multiple frequencies and varied effective masses. The origin of quantum oscillation is, however, still under debate with evidence of both two-dimensional Fermi surfaces and three-dimensional Fermi surfaces. Here, we carry out angle-resolved torque magnetometry measurements in a magnetic field up to 45 Tmore » and a temperature range down to 40 mK. With the magnetic field rotated in the (010) plane, the quantum oscillation frequency of the strongest oscillation branch shows a fourfold rotational symmetry. However, in the angular dependence of the amplitude of the same branch, this fourfold symmetry is broken and, instead, a twofold symmetry shows up, which is consistent with the prediction of a two-dimensional Lifshitz-Kosevich model. No deviation of Lifshitz-Kosevich behavior is observed down to 40 mK. Our results suggest the existence of multiple light-mass surface states in SmB 6, with their mobility significantly depending on the surface disorder level.« less

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB 6

DOE PAGES

Xiang, Z.; Lawson, B.; Asaba, T.; ...

2017-09-25

The Kondo insulator samarium hexaboride (SmB 6) has been intensely studied in recent years as a potential candidate of a strongly correlated topological insulator. One of the most exciting phenomena observed in SmB 6 is the clear quantum oscillations appearing in magnetic torque at a low temperature despite the insulating behavior in resistance. These quantum oscillations show multiple frequencies and varied effective masses. The origin of quantum oscillation is, however, still under debate with evidence of both two-dimensional Fermi surfaces and three-dimensional Fermi surfaces. Here, we carry out angle-resolved torque magnetometry measurements in a magnetic field up to 45 Tmore » and a temperature range down to 40 mK. With the magnetic field rotated in the (010) plane, the quantum oscillation frequency of the strongest oscillation branch shows a fourfold rotational symmetry. However, in the angular dependence of the amplitude of the same branch, this fourfold symmetry is broken and, instead, a twofold symmetry shows up, which is consistent with the prediction of a two-dimensional Lifshitz-Kosevich model. No deviation of Lifshitz-Kosevich behavior is observed down to 40 mK. Our results suggest the existence of multiple light-mass surface states in SmB 6, with their mobility significantly depending on the surface disorder level.« less

Solid State Research, 1977:2

DTIC Science & Technology

1977-05-15

February through 15 May 1977 PUBLISHED REPORTS Journal Articles JA No. 4621 Minority Carriers in Graphite and the H- Point Magnetoreflec- tion... point , the light at the output face must emerge from the coupled guide. In principle, both switch states can be achieved us- ing the A/3...Fermi level moves downward with increasing proton dose until it becomes pinned at a position designated as the high-dose Fermi level. At this point

Ab initio calculation of the G peak intensity of graphene: Laser-energy and Fermi-energy dependence and importance of quantum interference effects

NASA Astrophysics Data System (ADS)

Reichardt, Sven; Wirtz, Ludger

2017-05-01

We present the results of a diagrammatic, fully ab initio calculation of the G peak intensity of graphene. The flexibility and generality of our approach enables us to go beyond the previous analytical calculations in the low-energy regime. We study the laser and Fermi energy dependence of the G peak intensity and analyze the contributions from resonant and nonresonant electronic transitions. In particular, we explicitly demonstrate the importance of quantum interference and nonresonant states for the G peak process. Our method of analysis and computational concept is completely general and can easily be applied to study other materials as well.

Energy Fluctuation of Ideal Fermi Gas Trapped under Generic Power Law Potential U=\\sum_{i=1}^{d} c_i\\vert x_{i}/a_{i}\\vert^{n_{i} } in d Dimensions

NASA Astrophysics Data System (ADS)

Mir, Mehedi Faruk; Muktadir Rahman, Md.; Dwaipayan, Debnath; Sakhawat Hossain Himel, Md.

2016-04-01

Energy fluctuation of ideal Fermi gas trapped under generic power law potential U=\\sumi=1d ci \\vertxi/ai \\vert n_i has been calculated in arbitrary dimensions. Energy fluctuation is scrutinized further in the degenerate limit μ ≫ KBT with the help of Sommerfeld expansion. The dependence of energy fluctuation on dimensionality and power law potential is studied in detail. Most importantly our general result can not only exactly reproduce the recently published result regarding free and harmonically trapped ideal Fermi gas in d = 3 but also can describe the outcome for any power law potential in arbitrary dimension.

Electron-ion coupling in semiconductors beyond Fermi's Golden Rule [On the electron-ion coupling in semiconductors beyond Fermi's Golden Rule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Medvedev, Nikita; Li, Zheng; Tkachenko, Victor

2017-01-31

In the present study, a theoretical study of electron-phonon (electron-ion) coupling rates in semiconductors driven out of equilibrium is performed. Transient change of optical coefficients reflects the band gap shrinkage in covalently bonded materials, and thus, the heating of atomic lattice. Utilizing this dependence, we test various models of electron-ion coupling. The simulation technique is based on tight-binding molecular dynamics. Our simulations with the dedicated hybrid approach (XTANT) indicate that the widely used Fermi's golden rule can break down describing material excitation on femtosecond time scales. In contrast, dynamical coupling proposed in this work yields a reasonably good agreement ofmore » simulation results with available experimental data.« less

Implementing the correlated fermi gas nuclear model for quasielastic neutrino-nucleus scattering

NASA Astrophysics Data System (ADS)

Tockstein, Jameson

2017-09-01

When studying neutrino oscillations an understanding of charged current quasielastic (CCQE) neutrino-nucleus scattering is imperative. This interaction depends on a nuclear model as well as knowledge of form factors. Neutrino experiments, such as MiniBooNE, often use the Relativistic Fermi Gas (RFG) nuclear model. Recently, the Correlated Fermi Gas (CFG) nuclear model was suggested in, based on inclusive and exclusive scattering experiments at JLab. We implement the CFG model for CCQE scattering. In particular, we provide analytic expressions for this implementation that can be used to analyze current and future neutrino CCQE data. This project was supported through the Wayne State University REU program under NSF Grant PHY-1460853 and by the DOE Grant DE-SC0007983.

Fermi Blobs and the Symplectic Camel: A Geometric Picture of Quantum States

NASA Astrophysics Data System (ADS)

Gossona, Maurice A. De

We have explained in previous work the correspondence between the standard squeezed coherent states of quantum mechanics, and quantum blobs, which are the smallest phase space units compatible with the uncertainty principle of quantum mechanics and having the symplectic group as a group of symmetries. In this work, we discuss the relation between quantum blobs and a certain level set (which we call "Fermi blob") introduced by Enrico Fermi in 1930. Fermi blobs allows us to extend our previous results not only to the excited states of the generalized harmonic oscillator in n dimensions, but also to arbitrary quadratic Hamiltonians. As is the case for quantum blobs, we can evaluate Fermi blobs using a topological notion, related to the uncertainty principle, the symplectic capacity of a phase space set. The definition of this notion is made possible by Gromov's symplectic non-squeezing theorem, nicknamed the "principle of the symplectic camel".

Non-Fermi liquid and heavy fermion behavior in CexLa1-xB6 with quadrupolar moments

NASA Astrophysics Data System (ADS)

Nakamura, Shintaro; Yamamoto, Harufumi; Endo, Motoki; Aoki, Haruyoshi; Kimura, Noriaki; Nojima, Tsutomu; Kunii, Satoru

2006-05-01

The electrical resistivity of the cubic Kondo system CexLa1-xB6 ( x=0.1-0.65) has been measured. Non-Fermi liquid behavior is found in paramagnetic phase I over the wide Ce concentration range. Heavy fermion behavior is found in ordered phases of Ce0.65La0.35B6. The mass enhancement of quasiparticles in this compound is strongly dependent of the magnetic field.

Symmetry of the oxygen hole states in Bi 2Sr 2CaCu 2O 8 investigated by XAS

NASA Astrophysics Data System (ADS)

Kuiper, P.; Grioni, M.; Sawatzky, G. A.; Mitzi, D. B.; Kapitulnik, A.; Santaniello, A.; de Padova, P.; Thiry, P.

1989-02-01

We have observed strong polarization dependence in the X-ray absorption near the oxygen K edge in a single crystal of Bi 2Sr 2CaCu 2O 8 ( Tc=85 K). The results show that O-derived holes near the Fermi-level have p x, y (perpendicular to the c-axis) symmetry. Some consequences for models of superconductivity are discussed. The concentration of holes is estimated to be about equal to that in YBa 2Cu 3O 7.

Coverage dependent work function of graphene on a Cu(111) substrate with intercalated alkali metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cook, Brandon G.; Russakoff, Arthur; Varga, Kalman

2015-05-26

Using first-principles calculations, it is shown that the work function of graphene on copper can be adjusted by varying the concentration of intercalated alkali metals. Using density functional theory, we calculate the modulation of work function when Li, Na, or K are intercalated between graphene and a Cu(111) surface. Furthermore, the physical origins of the change in work function are explained in terms of phenomenological models accounting for the formation and depolarization of interfacial dipoles and the shift in the Fermi-level induced via charge transfer.

Pressure induced change in the electronic state of Ta 4 Pd 3 Te 16

DOE PAGES

Jo, Na Hyun; Xiang, Li; Kaluarachchi, Udhara S.; ...

2017-04-24

Here, we present measurements of superconducting transition temperature, resistivity, magnetoresistivity, and temperature dependence of the upper critical field of Ta 4 Pd 3 Te 16 under pressures up to 16.4 kbar. All measured properties have an anomaly at ~ 2 $-$ 4 kbar pressure range; in particular there is a maximum in T c and upper critical field, H c2 ( 0 ), and minimum in low temperature, normal state resistivity. Qualitatively, the data can be explained considering the density of state at the Fermi level as a dominant parameter.

Relativistic Thomas-Fermi treatment of compressed atoms and compressed nuclear matter cores of stellar dimensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rotondo, M.; Rueda, Jorge A.; Xue, S.-S.

The Feynman-Metropolis-Teller treatment of compressed atoms is extended to the relativistic regimes. Each atomic configuration is confined by a Wigner-Seitz cell and is characterized by a positive electron Fermi energy. The nonrelativistic treatment assumes a pointlike nucleus and infinite values of the electron Fermi energy can be attained. In the relativistic treatment there exists a limiting configuration, reached when the Wigner-Seitz cell radius equals the radius of the nucleus, with a maximum value of the electron Fermi energy (E{sub e}{sup F}){sub max}, here expressed analytically in the ultrarelativistic approximation. The corrections given by the relativistic Thomas-Fermi-Dirac exchange term are alsomore » evaluated and shown to be generally small and negligible in the relativistic high-density regime. The dependence of the relativistic electron Fermi energies by compression for selected nuclei are compared and contrasted to the nonrelativistic ones and to the ones obtained in the uniform approximation. The relativistic Feynman-Metropolis-Teller approach here presented overcomes some difficulties in the Salpeter approximation generally adopted for compressed matter in physics and astrophysics. The treatment is then extrapolated to compressed nuclear matter cores of stellar dimensions with A{approx_equal}(m{sub Planck}/m{sub n}){sup 3}{approx}10{sup 57} or M{sub core}{approx}M{sub {circle_dot}}. A new family of equilibrium configurations exists for selected values of the electron Fermi energy varying in the range 0

Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving.

PubMed

Li, Jiaming; de Melo, Leonardo F; Luo, Le

2017-03-30

We present a cooling method for a cold Fermi gas by parametrically driving atomic motions in a crossed-beam optical dipole trap (ODT). Our method employs the anharmonicity of the ODT, in which the hotter atoms at the edge of the trap feel the anharmonic components of the trapping potential, while the colder atoms in the center of the trap feel the harmonic one. By modulating the trap depth with frequencies that are resonant with the anharmonic components, we selectively excite the hotter atoms out of the trap while keeping the colder atoms in the trap, generating parametric cooling. This experimental protocol starts with a magneto-optical trap (MOT) that is loaded by a Zeeman slower. The precooled atoms in the MOT are then transferred to an ODT, and a bias magnetic field is applied to create an interacting Fermi gas. We then lower the trapping potential to prepare a cold Fermi gas near the degenerate temperature. After that, we sweep the magnetic field to the noninteracting regime of the Fermi gas, in which the parametric cooling can be manifested by modulating the intensity of the optical trapping beams. We find that the parametric cooling effect strongly depends on the modulation frequencies and amplitudes. With the optimized frequency and amplitude, we measure the dependence of the cloud energy on the modulation time. We observe that the cloud energy is changed in an anisotropic way, where the energy of the axial direction is significantly reduced by parametric driving. The cooling effect is limited to the axial direction because the dominant anharmonicity of the crossed-beam ODT is along the axial direction. Finally, we propose to extend this protocol for the trapping potentials of large anharmonicity in all directions, which provides a promising scheme for cooling quantum gases using external driving.

Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a ‘parent’ compound of 112-type iron pnictide superconductors

NASA Astrophysics Data System (ADS)

Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

2018-01-01

We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a ‘parent’ compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s/T N) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s/T N, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

Effects of Inertia on Evolutionary Prisoner's Dilemma Game

NASA Astrophysics Data System (ADS)

Du, Wen-Bo; Cao, Xian-Bin; Liu, Run-Ran; Wang, Zhen

2012-09-01

Considering the inertia of individuals in real life, we propose a modified Fermi updating rule, where the inertia of players is introduced into evolutionary prisoner's dilemma game (PDG) on square lattices. We mainly focus on how the inertia affects the cooperative behavior of the system. Interestingly, we find that the cooperation level has a nonmonotonic dependence on the inertia: with small inertia, cooperators will soon be invaded by defectors; with large inertia, players are unwilling to change their strategies and the cooperation level remains the same as the initial state; while a moderate inertia can induce the highest cooperation level. Moreover, effects of environmental noise and individual inertia are studied. Our work may be helpful in understanding the emergence and persistence of cooperation in nature and society.

Carrier density independent scattering rate in SrTiO3-based electron liquids

PubMed Central

Mikheev, Evgeny; Raghavan, Santosh; Zhang, Jack Y.; Marshall, Patrick B.; Kajdos, Adam P.; Balents, Leon; Stemmer, Susanne

2016-01-01

We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with Tn (T is the temperature and n ≤ 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (EF). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n < 2). This includes the cuprates and other transition metal oxide perovskites, where strikingly similar density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory. PMID:26861764

High-temperature superconductivity from fine-tuning of Fermi-surface singularities in iron oxypnictides.

PubMed

Charnukha, A; Evtushinsky, D V; Matt, C E; Xu, N; Shi, M; Büchner, B; Zhigadlo, N D; Batlogg, B; Borisenko, S V

2015-12-18

In the family of the iron-based superconductors, the REFeAsO-type compounds (with RE being a rare-earth metal) exhibit the highest bulk superconducting transition temperatures (Tc) up to 55 K and thus hold the key to the elusive pairing mechanism. Recently, it has been demonstrated that the intrinsic electronic structure of SmFe0.92Co0.08AsO (Tc = 18 K) is highly nontrivial and consists of multiple band-edge singularities in close proximity to the Fermi level. However, it remains unclear whether these singularities are generic to the REFeAsO-type materials and if so, whether their exact topology is responsible for the aforementioned record Tc. In this work, we use angle-resolved photoemission spectroscopy (ARPES) to investigate the inherent electronic structure of the NdFeAsO0.6F0.4 compound with a twice higher Tc = 38 K. We find a similarly singular Fermi surface and further demonstrate that the dramatic enhancement of superconductivity in this compound correlates closely with the fine-tuning of one of the band-edge singularities to within a fraction of the superconducting energy gap Δ below the Fermi level. Our results provide compelling evidence that the band-structure singularities near the Fermi level in the iron-based superconductors must be explicitly accounted for in any attempt to understand the mechanism of superconducting pairing in these materials.

High-temperature superconductivity from fine-tuning of Fermi-surface singularities in iron oxypnictides

NASA Astrophysics Data System (ADS)

Charnukha, A.; Evtushinsky, D. V.; Matt, C. E.; Xu, N.; Shi, M.; Büchner, B.; Zhigadlo, N. D.; Batlogg, B.; Borisenko, S. V.

2015-12-01

In the family of the iron-based superconductors, the REFeAsO-type compounds (with RE being a rare-earth metal) exhibit the highest bulk superconducting transition temperatures (Tc) up to 55 K and thus hold the key to the elusive pairing mechanism. Recently, it has been demonstrated that the intrinsic electronic structure of SmFe0.92Co0.08AsO (Tc = 18 K) is highly nontrivial and consists of multiple band-edge singularities in close proximity to the Fermi level. However, it remains unclear whether these singularities are generic to the REFeAsO-type materials and if so, whether their exact topology is responsible for the aforementioned record Tc. In this work, we use angle-resolved photoemission spectroscopy (ARPES) to investigate the inherent electronic structure of the NdFeAsO0.6F0.4 compound with a twice higher Tc = 38 K. We find a similarly singular Fermi surface and further demonstrate that the dramatic enhancement of superconductivity in this compound correlates closely with the fine-tuning of one of the band-edge singularities to within a fraction of the superconducting energy gap Δ below the Fermi level. Our results provide compelling evidence that the band-structure singularities near the Fermi level in the iron-based superconductors must be explicitly accounted for in any attempt to understand the mechanism of superconducting pairing in these materials.

Recombination in polymer-fullerene bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cowan, Sarah R.; Roy, Anshuman; Heeger, Alan J.

2010-12-01

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

Influence of topological transitions in a quantizing magnetic field and anisotropy of current carrier scattering by acoustic phonons on the longitudinal electrical conductivity of layered crystals with open fermi surfaces

NASA Astrophysics Data System (ADS)

Gorskii, P. V.

2011-03-01

It is demonstrated that the dependence of Fermi's energy on the magnetic field causes a set of the Shubnikov - de Haas (SDH) oscillation frequencies to change, and their relative contribution to the total longitudinal conductivity of layered crystals depends on whether the scattering of current carriers is isotropic or anisotropic. Owing to the topological transition in a strong magnetic field, Fermi's surface (FS) is transformed from open into closed one and is compressed in the magnetic field direction. Therefore, in an ultraquantum limit, disregarding the Dingle factor, the longitudinal electrical conductivity of the layered crystal tends to zero as a reciprocal square of the magnetic field for the isotropic scattering and as a reciprocal cube of the magnetic field for the anisotropic scattering. All calculations are performed in the approximation of relaxation time considered to be constant versus the quantum numbers for the isotropic scattering and proportional to the longitudinal velocity of current carriers for the anisotropic scattering.

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

PubMed

Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

2006-07-20

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

Localized-to-extended-states transition below the Fermi level

NASA Astrophysics Data System (ADS)

Tito, M. A.; Pusep, Yu. A.

2018-05-01

Time-resolved photoluminescence is employed to examine a transition from localized to extended electron states below the Fermi level in multiple narrow quantum well GaAs/AlGaAs heterostructures, where disorder was generated by interface roughness. Such a transition resembles the metal-insulator transition profoundly investigated by electric transport measurements. An important distinction distinguishes the localized-to-extended-states transition studied here: it takes place below the Fermi level in an electron system with a constant concentration, which implies unchanging Coulomb correlations. Moreover, for such a localized-to-extended-states transition the temperature is shown to be irrelevant. In the insulating regime the magnetic field was found to cause an additional momentum relaxation which considerably enhanced the recombination rate. Thus, we propose a method to explore the evolution of the localized electron states in a system with a fixed disorder and Coulomb interaction.

Graphene patterns supported terahertz tunable plasmon induced transparency.

PubMed

He, Xiaoyong; Liu, Feng; Lin, Fangting; Shi, Wangzhou

2018-04-16

The tunable plasmonic induced transparency has been theoretically investigated based on graphene patterns/SiO 2 /Si/polymer multilayer structure in the terahertz regime, including the effects of graphene Fermi level, structural parameters and operation frequency. The results manifest that obvious Fano peak can be observed and efficiently modulated because of the strong coupling between incident light and graphene pattern structures. As Fermi level increases, the peak amplitude of Fano resonance increases, and the resonant peak position shifts to high frequency. The amplitude modulation depth of Fano curves is about 40% on condition that the Fermi level changes in the scope of 0.2-1.0 eV. With the distance between cut wire and double semi-circular patterns increases, the peak amplitude and figure of merit increases. The results are very helpful to develop novel graphene plasmonic devices (e.g. sensors, modulators, and antenna) and find potential applications in the fields of biomedical sensing and wireless communications.

Investigation of electronic structure and chemical bonding of intermetallic Pd2HfIn: An ab-initio study

NASA Astrophysics Data System (ADS)

Bano, Amreen; Gaur, N. K.

2018-05-01

Ab-initio calculations are carried out to study the electronic and chemical bonding properties of Intermetallic full Heusler compound Pd2HfIn which crystallizes in F-43m structure. All calculations are performed by using density functional theory (DFT) based code Quantum Espresso. Generalized gradient approximations (GGA) of Perdew- Burke- Ernzerhof (PBE) have been adopted for exchange-correlation potential. Calculated electronic band structure reveals the metallic character of the compound. From partial density of states (PDoS), we found the presence of relatively high intensity electronic states of 4d-Pd atom at Fermi level. We have found a pseudo-gap just abouve the Fermi level and N(E) at Fermi level is observed to be 0.8 states/eV, these finding indicates the existence of superconducting character in Pd2HfIn.

Magnetic quantization in monolayer bismuthene

NASA Astrophysics Data System (ADS)

Chen, Szu-Chao; Chiu, Chih-Wei; Lin, Hui-Chi; Lin, Ming-Fa

The magnetic quantization in monolayer bismuthene is investigated by the generalized tight-binding model. The quite large Hamiltonian matrix is built from the tight-binding functions of the various sublattices, atomic orbitals and spin states. Due to the strong spin orbital coupling and sp3 bonding, monolayer bismuthene has the diverse low-lying energy bands such as the parabolic, linear and oscillating energy bands. The main features of band structures are further reflected in the rich magnetic quantization. Under a uniform perpendicular magnetic field (Bz) , three groups of Landau levels (LLs) with distinct features are revealed near the Fermi level. Their Bz-dependent energy spectra display the linear, square-root and non-monotonous dependences, respectively. These LLs are dominated by the combinations of the 6pz orbital and (6px,6py) orbitals as a result of strong sp3 bonding. Specifically, the LL anti-crossings only occur between LLs originating from the oscillating energy band.

Defects in codoped NiO with gigantic dielectric response

NASA Astrophysics Data System (ADS)

Wu, Ping; Ligatchev, Valeri; Yu, Zhi Gen; Zheng, Jianwei; Sullivan, Michael B.; Zeng, Yingzhi

2009-06-01

We combine first-principles, statistical, and phenomenological methods to investigate the electronic and dielectric properties of NiO and clarify the nature of the gigantic dielectric response in codoped NiO. Unlike previous models which are dependent on grain-boundary effects, our model based on small polaron hopping in homogeneous material predicts the dielectric permittivity (104-5) for heavily Li- and MD -codoped NiO (MD=Ti,Al,Si) . Furthermore, we reproduce the experimental trends in dielectric properties as a function of the dopants nature and their concentrations, as well as the reported activation energies for the relaxation in Li- and Ti-codoped NiO (0.308 eV or 0.153 eV depending on the Fermi-level position). In this study, we demonstrate that small polaron hopping on dopant levels is the dominant mechanism for the gigantic dielectric response in these codoped NiO.

Energy-absorption spectroscopy of unitary Fermi gases in a uniform potential

NASA Astrophysics Data System (ADS)

Zhang, Pengfei; Yu, Zhenhua

2018-04-01

We propose to use the energy absorption spectroscopy to measure the kinetic coefficients of unitary Fermi gases in a uniform potential. We show that, in our scheme, the energy absorption spectrum is proportional to the dynamic structure factor of the system. The profile of the spectrum depends on the shear viscosity η , the thermal conductivity κ , and the superfluid bulk viscosity ξ3. We show that extraction of these coefficients from the spectrum is achievable in present experiments.

Fermi-Edge Singularity of Spin-Polarized Electrons

NASA Astrophysics Data System (ADS)

Plochocka-Polack, P.; Groshaus, J. G.; Rappaport, M.; Umansky, V.; Gallais, Y.; Pinczuk, A.; Bar-Joseph, I.

2007-05-01

We study the absorption spectrum of a two-dimensional electron gas (2DEG) in a magnetic field. We find that at low temperatures, when the 2DEG is spin polarized, the absorption spectra, which correspond to the creation of spin up or spin down electrons, differ in magnitude, linewidth, and filling factor dependence. We show that these differences can be explained as resulting from the creation of a Mahan exciton in one case, and of a power law Fermi-edge singularity in the other.

How the charge-neutrality level of interface states controls energy level alignment in cathode contacts of organic bulk-heterojunction solar cells.

PubMed

Guerrero, Antonio; Marchesi, Luís F; Boix, Pablo P; Ruiz-Raga, Sonia; Ripolles-Sanchis, Teresa; Garcia-Belmonte, Germà; Bisquert, Juan

2012-04-24

Electronic equilibration at the metal-organic interface, leading to equalization of the Fermi levels, is a key process in organic optoelectronic devices. How the energy levels are set across the interface determines carrier extraction at the contact and also limits the achievable open-circuit voltage under illumination. Here, we report an extensive investigation of the cathode energy equilibration of organic bulk-heterojunction solar cells. We show that the potential to balance the mismatch between the cathode metal and the organic layer Fermi levels is divided into two contributions: spatially extended band bending in the organic bulk and voltage drop at the interface dipole layer caused by a net charge transfer. We scan the operation of the cathode under a varied set of conditions, using metals of different work functions in the range of ∼2 eV, different fullerene acceptors, and several cathode interlayers. The measurements allow us to locate the charge-neutrality level within the interface density of sates and calculate the corresponding dipole layer strength. The dipole layer withstands a large part of the total Fermi level mismatch when the polymer:fullerene blend ratio approaches ∼1:1, producing the practical alignment between the metal Fermi level and the charge-neutrality level. Origin of the interface states is linked with fullerene reduced molecules covering the metal contact. The dipole contribution, and consequently the band bending, is highly sensitive to the nature and amount of fullerene molecules forming the interface density of states. Our analysis provides a detailed picture of the evolution of the potentials in the bulk and the interface of the solar cell when forward voltage is applied or when photogeneration takes place.

Stoichiometric and Oxygen-Deficient VO2 as Versatile Hole Injection Electrode for Organic Semiconductors.

PubMed

Fu, Keke; Wang, Rongbin; Katase, Takayoshi; Ohta, Hiromichi; Koch, Norbert; Duhm, Steffen

2018-03-28

Using photoemission spectroscopy, we show that the surface electronic structure of VO 2 is determined by the temperature-dependent metal-insulator phase transition and the density of oxygen vacancies, which depends on the temperature and ultrahigh vacuum (UHV) conditions. The atomically clean and stoichiometric VO 2 surface is insulating at room temperature and features an ultrahigh work function of up to 6.7 eV. Heating in UHV just above the phase transition temperature induces the expected metallic phase, which goes in hand with the formation of oxygen defects (up to 6% in this study), but a high work function >6 eV is maintained. To demonstrate the suitability of VO 2 as hole injection contact for organic semiconductors, we investigated the energy-level alignment with the prototypical organic hole transport material N, N'-di(1-naphthyl)- N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB). Evidence for strong Fermi-level pinning and the associated energy-level bending in NPB is found, rendering an Ohmic contact for holes.

Control of interlayer physics in 2H transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Wang, Kuang-Chung; Stanev, Teodor K.; Valencia, Daniel; Charles, James; Henning, Alex; Sangwan, Vinod K.; Lahiri, Aritra; Mejia, Daniel; Sarangapani, Prasad; Povolotskyi, Michael; Afzalian, Aryan; Maassen, Jesse; Klimeck, Gerhard; Hersam, Mark C.; Lauhon, Lincoln J.; Stern, Nathaniel P.; Kubis, Tillmann

2017-12-01

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers—depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.

Symmetry lowering of pentacene molecular states interacting with a Cu surface

NASA Astrophysics Data System (ADS)

Baldacchini, Chiara; Mariani, Carlo; Betti, Maria Grazia; Vobornik, Ivana; Fujii, Jun; Annese, Emilia; Rossi, Giorgio; Ferretti, Andrea; Calzolari, Arrigo; di Felice, Rosa; Ruini, Alice; Molinari, Elisa

2007-12-01

Pentacene adsorbed on the Cu(119) vicinal surface forms long-range ordered chain structures. Photoemission spectroscopy measurements and ab initio density functional theory simulations provide consistent evidences that pentacene molecular orbitals mix with the copper bands, giving rise to interaction states localized at the interface. Angular-resolved and polarization dependent photoemission spectroscopy shows that most of the pentacene derived intensity is strongly dichroic. The symmetry of the molecular states of the free pentacene molecules is reduced upon adsorption on Cu(119), as a consequence of the molecule-metal interaction. Theoretical results show a redistribution of the charge density in π molecular states close to the Fermi level, consistent with the photoemission intensities (density of states) and polarization dependence (orbital symmetry).

Measurement of myocardial blood flow by cardiovascular magnetic resonance perfusion: comparison of distributed parameter and Fermi models with single and dual bolus.

PubMed

Papanastasiou, Giorgos; Williams, Michelle C; Kershaw, Lucy E; Dweck, Marc R; Alam, Shirjel; Mirsadraee, Saeed; Connell, Martin; Gray, Calum; MacGillivray, Tom; Newby, David E; Semple, Scott Ik

2015-02-17

Mathematical modeling of cardiovascular magnetic resonance perfusion data allows absolute quantification of myocardial blood flow. Saturation of left ventricle signal during standard contrast administration can compromise the input function used when applying these models. This saturation effect is evident during application of standard Fermi models in single bolus perfusion data. Dual bolus injection protocols have been suggested to eliminate saturation but are much less practical in the clinical setting. The distributed parameter model can also be used for absolute quantification but has not been applied in patients with coronary artery disease. We assessed whether distributed parameter modeling might be less dependent on arterial input function saturation than Fermi modeling in healthy volunteers. We validated the accuracy of each model in detecting reduced myocardial blood flow in stenotic vessels versus gold-standard invasive methods. Eight healthy subjects were scanned using a dual bolus cardiac perfusion protocol at 3T. We performed both single and dual bolus analysis of these data using the distributed parameter and Fermi models. For the dual bolus analysis, a scaled pre-bolus arterial input function was used. In single bolus analysis, the arterial input function was extracted from the main bolus. We also performed analysis using both models of single bolus data obtained from five patients with coronary artery disease and findings were compared against independent invasive coronary angiography and fractional flow reserve. Statistical significance was defined as two-sided P value < 0.05. Fermi models overestimated myocardial blood flow in healthy volunteers due to arterial input function saturation in single bolus analysis compared to dual bolus analysis (P < 0.05). No difference was observed in these volunteers when applying distributed parameter-myocardial blood flow between single and dual bolus analysis. In patients, distributed parameter modeling was able to detect reduced myocardial blood flow at stress (<2.5 mL/min/mL of tissue) in all 12 stenotic vessels compared to only 9 for Fermi modeling. Comparison of single bolus versus dual bolus values suggests that distributed parameter modeling is less dependent on arterial input function saturation than Fermi modeling. Distributed parameter modeling showed excellent accuracy in detecting reduced myocardial blood flow in all stenotic vessels.

Strain effect on the photoluminescence property of gold nanoclusters

NASA Astrophysics Data System (ADS)

Saravanan, K.; David, C.; Jayalakshmi, G.; Panigrahi, B. K.; Avasthi, D. K.

2018-02-01

Herein, we report the temperature-dependent photoluminescence (PL) properties of Au nanoclusters (NCs) embedded in a Si matrix. Gold NCs have been synthesized in Si by a multistep procedure that involves ion implantation and gold decoration by drive in annealing. Transmission electron microscopic studies reveal profuse nucleation of Au NCs, with mean sizes of ˜8 nm in the near-surface region. PL measurements in the range of 2 eV to 3.65 eV were carried out in the temperature range of 5 K to 300 K. The Au NCs exhibit PL emissions at 3 eV and 2.5 eV; these are attributed to the recombination of sp-band electrons with the holes of a deep lying d-band below the Fermi level in the vicinity of the L symmetry point of the Brillouin zone and the recombination of sp band electrons with the holes of the first d band below the Fermi level in the vicinity of the X symmetry point of the Brillouin zone, respectively. Temperature-dependent PL measurements show that the PL intensity of Au NCs initially decreases with the increase of temperature up to 50 K, and, thereafter, the intensity starts to increase and reaches a maximum at 150 K. A further increase in temperature causes the intensity to decrease. However, the PL intensity of Au NCs embedded in a sapphire matrix monotonically decreases with the increase of temperature. The present work discusses the plausible mechanism behind this unusual PL behaviour by invoking the role of strain at the NC-matrix interface.

Fermi surface in the hidden-order state of URu2Si2 under intense pulsed magnetic fields up to 81 T

NASA Astrophysics Data System (ADS)

Scheerer, G. W.; Knafo, W.; Aoki, D.; Nardone, M.; Zitouni, A.; Béard, J.; Billette, J.; Barata, J.; Jaudet, C.; Suleiman, M.; Frings, P.; Drigo, L.; Audouard, A.; Matsuda, T. D.; Pourret, A.; Knebel, G.; Flouquet, J.

2014-04-01

We present measurements of the resistivity ρx ,x of URu2Si2 high-quality single crystals in pulsed high magnetic fields up to 81 T at a temperature of 1.4 K and up to 60 T at temperatures down to 100 mK. For a field H applied along the magnetic easy axis c, a strong sample dependence of the low-temperature resistivity in the hidden-order phase is attributed to a high carrier mobility. The interplay between the magnetic and orbital properties is emphasized by the angle dependence of the phase diagram, where magnetic transition fields and crossover fields related to the Fermi surface properties follow a 1/cosθ law, θ being the angle between H and c. For H ∥c, a crossover defined at a kink of ρx ,x, as initially reported in [Shishido, Phys. Rev. Lett. 102, 156403 (2009), 10.1103/PhysRevLett.102.156403], is found to be strongly sample dependent: its characteristic field μ0H* varies from ≃20 T in our best sample with a residual resistivity ratio RRR = ρx ,x(300K)/ ρx ,x(2K) of 225 to ≃25 T in a sample with a RRR of 90. A second crossover is defined at the maximum of ρx ,x at the sample-independent low-temperature (LT) characteristic field μ0Hρ,maxLT≃30 T. Fourier analyses of Shubnikov-de Haas oscillations show that Hρ,maxLT coincides with a sudden modification of the Fermi surface, while H* lies in a regime where the Fermi surface is smoothly modified. For H ∥a, (i) no phase transition is observed at low temperature and the system remains in the hidden-order phase up to 81 T, (ii) quantum oscillations surviving up to 7 K are related to a new orbit observed at the frequency Fλ≃1350 T and associated with a low effective mass mλ*=(1±0.5)m0, where m0 is the free electron mass, and (iii) no Fermi surface modification occurs up to 81 T.

Particle scattering by harmonically trapped Bose and Fermi gases

NASA Astrophysics Data System (ADS)

Bhattacharya, Ankita; Das, Samir; Biswas, Shyamal

2018-04-01

We have analytically explored the quantum phenomenon of particle scattering by harmonically trapped Bose and Fermi gases with the short ranged Fermi–Huang {δ }p3 interactions (Fermi 1936 Ric. Sci. 7 13; Huang and Yang 1957 Phys. Rev. 105 767) interactions among the incident particle and the scatterers. We have predicted differential scattering cross-sections and their temperature dependence in this regard. Coherent scattering even by a single boson or fermion in the finite geometry gives rise to new tool of determining energy eigenstate of the scatterer. Our predictions on the differential scattering cross-sections can be tested within the present day experimental setups, specially, for (i) 3D harmonically trapped interacting Bose–Einstein condensate (BEC), (ii) BECs in a double well, and (iii) BECs in an optical lattice.

A tool to estimate the Fermi Large Area Telescope background for short-duration observations

DOE PAGES

Vasileiou, Vlasios

2013-07-25

Here, the proper estimation of the background is a crucial component of data analyses in astrophysics, such as source detection, temporal studies, spectroscopy, and localization. For the case of the Large Area Telescope (LAT) on board the Fermi spacecraft, approaches to estimate the background for short (≲1000 s duration) observations fail if they ignore the strong dependence of the LAT background on the continuously changing observational conditions. We present a (to be) publicly available background-estimation tool created and used by the LAT Collaboration in several analyses of Gamma Ray Bursts. This tool can accurately estimate the expected LAT background formore » any observational conditions, including, for example, observations with rapid variations of the Fermi spacecraft’s orientation occurring during automatic repointings.« less

Searches for cosmic-ray electron anisotropies with the Fermi Large Area Telescope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.; Ajello, M.; Bechtol, K.

The Large Area Telescope on board the Fermi satellite (Fermi LAT) detected more than 1.6x10{sup 6} cosmic-ray electrons/positrons with energies above 60 GeV during its first year of operation. The arrival directions of these events were searched for anisotropies of angular scale extending from {approx}10 deg. up to 90 deg., and of minimum energy extending from 60 GeV up to 480 GeV. Two independent techniques were used to search for anisotropies, both resulting in null results. Upper limits on the degree of the anisotropy were set that depended on the analyzed energy range and on the anisotropy's angular scale. Themore » upper limits for a dipole anisotropy ranged from {approx}0.5% to {approx}10%.« less

Searches for cosmic-ray electron anisotropies with the Fermi Large Area Telescope

DOE PAGES

Ackermann, M.

2010-11-01

The Large Area Telescope on board the Fermi satellite (Fermi LAT) detected more than 1.6 × 10 6 cosmic-ray electrons/positrons with energies above 60 GeV during its first year of operation. The arrival directions of these events were searched for anisotropies of angular scale extending from ~ 10 ° up to 90°, and of minimum energy extending from 60 GeV up to 480 GeV. Two independent techniques were used to search for anisotropies, both resulting in null results. Upper limits on the degree of the anisotropy were set that depended on the analyzed energy range and on the anisotropy’s angularmore » scale. The upper limits for a dipole anisotropy ranged from ~ 0.5 % to ~ 10 % .« less

The dynamical conductance of graphene tunnelling structures.

PubMed

Zhang, Huan; Chan, K S; Lin, Zijing

2011-12-16

The dynamical conductances of graphene tunnelling structures were numerically calculated using the scattering matrix method with the interaction effect included in a phenomenological approach. The overall single-barrier dynamical conductance is capacitative. Transmission resonances in the single-barrier structure lead to dips in the capacitative imaginary part of the response. This is different from the ac responses of typical semiconductor nanostructures, where transmission resonances usually lead to inductive peaks. The features of the dips depend on the Fermi energy. When the Fermi energy is below half of the barrier height, the dips are sharper. When the Fermi energy is higher than half of the barrier height, the dips are broader. Inductive behaviours can be observed in a double-barrier structure due to the resonances formed by reflection between the two barriers.

Quasiparticle interference of the Fermi arcs and surface-bulk connectivity of a Weyl semimetal.

PubMed

Inoue, Hiroyuki; Gyenis, András; Wang, Zhijun; Li, Jian; Oh, Seong Woo; Jiang, Shan; Ni, Ni; Bernevig, B Andrei; Yazdani, Ali

2016-03-11

Weyl semimetals host topologically protected surface states, with arced Fermi surface contours that are predicted to propagate through the bulk when their momentum matches that of the surface projections of the bulk's Weyl nodes. We used spectroscopic mapping with a scanning tunneling microscope to visualize quasiparticle scattering and interference at the surface of the Weyl semimetal TaAs. Our measurements reveal 10 different scattering wave vectors, which can be understood and precisely reproduced with a theory that takes into account the shape, spin texture, and momentum-dependent propagation of the Fermi arc surface states into the bulk. Our findings provide evidence that Weyl nodes act as sinks for electron transport on the surface of these materials. Copyright © 2016, American Association for the Advancement of Science.

Temperature dependence of the symmetry energy and neutron skins in Ni, Sn, and Pb isotopic chains

NASA Astrophysics Data System (ADS)

Antonov, A. N.; Kadrev, D. N.; Gaidarov, M. K.; Sarriguren, P.; de Guerra, E. Moya

2017-02-01

The temperature dependence of the symmetry energy for isotopic chains of even-even Ni, Sn, and Pb nuclei is investigated in the framework of the local density approximation (LDA). The Skyrme energy density functional with two Skyrme-class effective interactions, SkM* and SLy4, is used in the calculations. The temperature-dependent proton and neutron densities are calculated through the hfbtho code that solves the nuclear Skyrme-Hartree-Fock-Bogoliubov problem by using the cylindrical transformed deformed harmonic-oscillator basis. In addition, two other density distributions of 208Pb, namely the Fermi-type density determined within the extended Thomas-Fermi (TF) method and symmetrized-Fermi local density obtained within the rigorous density functional approach, are used. The kinetic energy densities are calculated either by the hfbtho code or, for a comparison, by the extended TF method up to second order in temperature (with T2 term). Alternative ways to calculate the symmetry energy coefficient within the LDA are proposed. The results for the thermal evolution of the symmetry energy coefficient in the interval T =0 -4 MeV show that its values decrease with temperature. The temperature dependence of the neutron and proton root-mean-square radii and corresponding neutron skin thickness is also investigated, showing that the effect of temperature leads mainly to a substantial increase of the neutron radii and skins, especially in the more neutron-rich nuclei, a feature that may have consequences on astrophysical processes and neutron stars.

High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

DTIC Science & Technology

2010-02-19

UHV- deposited Al2O3(3nm)/ Ga2O3 (Gd2O3)(8.5nm) on n- and p-In0.2Ga0.8As/GaAs. The results exhibit very high-quality interface and free-moving Fermi...κ Ga2O3 (Gd2O3) [GGO] and Gd2O3 on InGaAs, without an interfacial layer. InxGa1−xAs MOSFETs have been successfully demonstrated with excellent device... Ga2O3 (Gd2O3)/In0.2Ga0.8As and high temperature (850°C) stability Scaling high κ oxides to nanometer range as well as unpinning surface Fermi level

First Principles Study of Band Structure and Band Gap Engineering in Graphene for Device Applications

DTIC Science & Technology

2015-03-20

In the bandstructure of graphene which is dominated by Dirac description, valence and conduction bands cross the Fermi level at a single point (K...of energy bands and appearance of Dirac cones near the ‘K’ point and Fermi level the electrons behave like massless Dirac fermions. For applications...results. Introduction Graphene, the super carbon , is now accepted as wonder material with new physics and it has caused major

Ab initio study of gold-doped zigzag graphene nanoribbons

NASA Astrophysics Data System (ADS)

Srivastava, Pankaj; Dhar, Subhra; Jaiswal, Neeraj K.

2014-12-01

The electronic transport properties of zigzag graphene nanoribbons (ZGNRs) through covalent functionalization of gold (Au) atoms is investigated by using non-equilibrium Green's function combined with density functional theory. It is revealed that the electronic properties of Au-doped ZGNRs vary significantly due to spin and its non-inclusion. We find that the DOS profiles of Au-adsorbed ZGNR due to spin reveal very less number of states available for conduction, whereas non-inclusion of spin results in higher DOS across the Fermi level. Edge Au-doped ribbons exhibit stable structure and are energetically more favorable than the center Au-doped ZGNRs. Though the chemical interaction at the ZGNR-Au interface modifies the Fermi level, Au-adsorbed ZGNR reveals semimetallic properties. A prominent qualitative change of the I-V curve from linear to nonlinear is observed as the Au atom shifts from center toward the edges of the ribbon. Number of peaks present near the Fermi level ensures conductance channels available for charge transport in case of Au-center-substituted ZGNR. We predict semimetallic nature of the Au-adsorbed ZGNR with a high DOS peak distributed over a narrow energy region at the Fermi level and fewer conductance channels. Our calculations for the magnetic properties predict that Au functionalization leads to semiconducting nature with different band gaps for spin up and spin down. The outcomes are compared with the experimental and theoretical results available for other materials.

Quantum oscillations in the type-II Dirac semi-metal candidate PtSe2

NASA Astrophysics Data System (ADS)

Yang, Hao; Schmidt, Marcus; Süss, Vicky; Chan, Mun; Balakirev, Fedor F.; McDonald, Ross D.; Parkin, Stuart S. P.; Felser, Claudia; Yan, Binghai; Moll, Philip J. W.

2018-04-01

Three-dimensional topological semi-metals carry quasiparticle states that mimic massless relativistic Dirac fermions, elusive particles that have never been observed in nature. As they appear in the solid body, they are not bound to the usual symmetries of space-time and thus new types of fermionic excitations that explicitly violate Lorentz-invariance have been proposed, the so-called type-II Dirac fermions. We investigate the electronic spectrum of the transition-metal dichalcogenide PtSe2 by means of quantum oscillation measurements in fields up to 65 T. The observed Fermi surfaces agree well with the expectations from band structure calculations, that recently predicted a type-II Dirac node to occur in this material. A hole- and an electron-like Fermi surface dominate the semi-metal at the Fermi level. The quasiparticle mass is significantly enhanced over the bare band mass value, likely by phonon renormalization. Our work is consistent with the existence of type-II Dirac nodes in PtSe2, yet the Dirac node is too far below the Fermi level to support free Dirac–fermion excitations.

The impact of the Fermi-Dirac distribution on charge injection at metal/organic interfaces.

PubMed

Wang, Z B; Helander, M G; Greiner, M T; Lu, Z H

2010-05-07

The Fermi level has historically been assumed to be the only energy-level from which carriers are injected at metal/semiconductor interfaces. In traditional semiconductor device physics, this approximation is reasonable as the thermal distribution of delocalized states in the semiconductor tends to dominate device characteristics. However, in the case of organic semiconductors the weak intermolecular interactions results in highly localized electronic states, such that the thermal distribution of carriers in the metal may also influence device characteristics. In this work we demonstrate that the Fermi-Dirac distribution of carriers in the metal has a much more significant impact on charge injection at metal/organic interfaces than has previously been assumed. An injection model which includes the effect of the Fermi-Dirac electron distribution was proposed. This model has been tested against experimental data and was found to provide a better physical description of charge injection. This finding indicates that the thermal distribution of electronic states in the metal should, in general, be considered in the study of metal/organic interfaces.

Van Hove singularities in the paramagnetic phase of the Hubbard model: DMFT study

NASA Astrophysics Data System (ADS)

Žitko, Rok; Bonča, Janez; Pruschke, Thomas

2009-12-01

Using the dynamical mean-field theory (DMFT) with the numerical renormalization-group impurity solver we study the paramagnetic phase of the Hubbard model with the density of states (DOS) corresponding to the three-dimensional (3D) cubic lattice and the two-dimensional (2D) square lattice, as well as a DOS with inverse square-root singularity. We show that the electron correlations rapidly smooth out the square-root van Hove singularities (kinks) in the spectral function for the 3D lattice and that the Mott metal-insulator transition (MIT) as well as the magnetic-field-induced MIT differ only little from the well-known results for the Bethe lattice. The consequences of the logarithmic singularity in the DOS for the 2D lattice are more dramatic. At half filling, the divergence pinned at the Fermi level is not washed out, only its integrated weight decreases as the interaction is increased. While the Mott transition is still of the usual kind, the magnetic-field-induced MIT falls into a different universality class as there is no field-induced localization of quasiparticles. In the case of a power-law singularity in the DOS at the Fermi level, the power-law singularity persists in the presence of interaction, albeit with a different exponent, and the effective impurity model in the DMFT turns out to be a pseudogap Anderson impurity model with a hybridization function which vanishes at the Fermi level. The system is then a generalized Fermi liquid. At finite doping, regular Fermi-liquid behavior is recovered.

The effect of ultrasonic and HNO3 treatment of activated carbon from fruit stones on capacitive and pseudocapacitive energy storage in electrochemical supercapacitors.

PubMed

Venhryn, B Ya; Stotsko, Z A; Grygorchak, I I; Bakhmatyuk, B P; Mudry, S I

2013-09-01

The effect of ultrasonic treatment and modification with nitric acid of activated carbon obtained from fruit stones, on the parameters of electric double-layer (EDL) as well as on farad-volt characteristics of its boundary with electrolyte 7.6 m KОН, 4 m KI and 2 m ZnI2 aqueous solutions has been studied by means of precision porometry, cyclic voltamperometry, electrochemical impedance spectroscopy and computer simulation methods. It is shown that HNO3 treatment results in an increase of the electrostatic capacitance up to 202 F/g in 7.6 m KОН-solution as well as pseudocapacitance up to 1250 F/g in 4 m KI. This increase is supposed to be related both with hydrophilicity and with an increase of the density of states on Fermi level. The ultrasonic treatment enables one to significantly increase (more than 200 times) the density of states on Fermi level which in turn causes both quantitative and qualitative changes in farad-volt dependences. A hybrid supercapacitor with specific capacitance of 1100 F/g and specific energy of 49 Wh/kg per active mass of two electrodes was developed. Copyright © 2013 Elsevier B.V. All rights reserved.

Magnetic field dependent dynamics and field-driven metal-to-insulator transition of the half-filled Hubbard model: A DMFT+DMRG study

DOE PAGES

Zhu, Wei; Sheng, D. N.; Zhu, Jian -Xin

2017-08-14

Here, we study the magnetic field-driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group algorithm. The method enables us to obtain a high-resolution spectral densities in the presence of a magnetic field. It is found that the Kondo resonance at the Fermi level splits at relatively high magnetic field: the spin-up and -down components move away from the Fermi level and finally form a spin-polarized band insulator. By calculating the magnetization and spin susceptibility, we clarify that an applied magnetic field drives amore » transition from a paramagnetic metallic phase to a band insulating phase. In the weak interaction regime, the nature of the transition is continuous and captured by the Stoner's description, while in the strong interaction regime the transition is very likely to be metamagnetic, evidenced by the hysteresis curve. Furthermore, we determine the phase boundary by tracking the kink in the magnetic susceptibility, and the steplike change of the entanglement entropy and the entanglement gap closing. Interestingly, the phase boundaries determined from these two different ways are largely consistent with each other.« less

Ab initio study on rare-earth iron-pnictides RFeAsO (R = Pr, Nd, Sm, Gd) in low-temperature Cmma phase

NASA Astrophysics Data System (ADS)

Eryigit, Resul; Gurel, Tanju; Erturk, Esra; Lukoyanov, A. V.; Akcay, Guven; Anisimov, V. I.

2014-03-01

We present density functional theory calculations on iron-based pnictides RFeAsO (R = Pr, Nd, Sm, Gd). The calculations have been carried out using plane-waves and projector augmented wave (PAW) pseudopotential approach. Structural, magnetic and electronic properties are studied within generalized gradient approximation (GGA) and also within GGA+U in order to investigate the influence of electron correlation effects. Low-temperature Cmma structure is fully optimized by GGA considering both non-magnetic and magnetic cells. We have found that spin-polarized structure improves the agreement with experiments on equilibrium lattice parameters, particularly c lattice parameter and Fe-As bond-lengths. Electronic band structure, total density of states, and spin-dependent orbital-resolved density of states are also analyzed in the frameworks of GGA and GGA+U and discussed. For all materials, by including on-site Coulomb correction, rare earth 4f states move away from the Fermi level and the Fermi level features of the systems are found to be mostly defined by the 3d electron-electron correlations in Fe. This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK Project No. TBAG-111T796) and the Russian Foundation for Basic Research (Project No. 12-02-91371-CT_a).

Magnetic field dependent dynamics and field-driven metal-to-insulator transition of the half-filled Hubbard model: A DMFT+DMRG study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Wei; Sheng, D. N.; Zhu, Jian -Xin

Here, we study the magnetic field-driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group algorithm. The method enables us to obtain a high-resolution spectral densities in the presence of a magnetic field. It is found that the Kondo resonance at the Fermi level splits at relatively high magnetic field: the spin-up and -down components move away from the Fermi level and finally form a spin-polarized band insulator. By calculating the magnetization and spin susceptibility, we clarify that an applied magnetic field drives amore » transition from a paramagnetic metallic phase to a band insulating phase. In the weak interaction regime, the nature of the transition is continuous and captured by the Stoner's description, while in the strong interaction regime the transition is very likely to be metamagnetic, evidenced by the hysteresis curve. Furthermore, we determine the phase boundary by tracking the kink in the magnetic susceptibility, and the steplike change of the entanglement entropy and the entanglement gap closing. Interestingly, the phase boundaries determined from these two different ways are largely consistent with each other.« less

Unconventional Electron Pairing and Topological Superconductivity in Proximitized HgTe Quantum Wells

NASA Astrophysics Data System (ADS)

Ren, Hechen; Hart, Sean; Kosowsky, Michael; Ben-Shach, Gilad; Leubner, Philipp; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; Halperin, Bertrand; Yacoby, Amir

Coupling s-wave superconductors to systems with exotic Fermi surface spin textures has been recently proposed as a way to manipulate the nature of the paired state, in some cases even leading to a topological phase transition. Recently, we studied the behavior of Fraunhofer interference in HgTe quantum well-based Josephson junctions, in the presence of a magnetic field applied in the plane of the quantum well. Here we theoretically analyze our system and compare the predicted behavior to our experimental results. We find that the in-plane magnetic field tunes the momentum of Cooper pairs in the quantum well, directly reflecting the response of the spin-dependent Fermi surfaces. This momentum tuning depends crucially on the type of spin-orbit coupling in the system. In the high electron density regime, the induced superconductivity evolves with electron density in agreement with our model based on the Hamiltonian of Bernevig, Hughes and Zhang. This agreement provides a quantitative value for g/vF, where g is the effective g-factor and vF is the Fermi velocity. Our new understanding of the interplay between spin physics and superconductivity introduces a way to spatially engineer the order parameter from singlet to triplet pairing, and in general allows investigation of electronic spin texture at the Fermi surface of materials. NSF DMR-1206016; STC Center for Integrated Quantum Materials under NSF Grant No. DMR-1231319; NSF GRFP under Grant DGE1144152, Microsoft Corporation Project Q.

Correlation between non-Fermi-liquid behavior and superconductivity in (Ca, La)(Fe,Co)As2 iron arsenides: A high-pressure study

NASA Astrophysics Data System (ADS)

Zhou, W.; Ke, F.; Xu, Xiaofeng; Sankar, R.; Xing, X.; Xu, C. Q.; Jiang, X. F.; Qian, B.; Zhou, N.; Zhang, Y.; Xu, M.; Li, B.; Chen, B.; Shi, Z. X.

2017-11-01

Non-Fermi-liquid (NFL) phenomena associated with correlation effects have been widely observed in the phase diagrams of unconventional superconducting families. Exploration of the correlation between the normal state NFL, regardless of its microscopic origins, and the superconductivity has been argued as a key to unveiling the mystery of the high-Tc pairing mechanism. Here we systematically investigate the pressure-dependent in-plane resistivity (ρ ) and Hall coefficient (RH) of a high-quality 112-type Fe-based superconductor Ca1 -xLaxFe1 -yCoyAs2 (x =0.2 ,y =0.02 ). With increasing pressure, the normal-state resistivity of the studied sample exhibits a pronounced crossover from non-Fermi-liquid to Fermi-liquid behaviors. Accompanied with this crossover, Tc is gradually suppressed. In parallel, the extremum in the Hall coefficient RH(T ) curve, possibly due to anisotropic scattering induced by spin fluctuations, is also gradually suppressed. The symbiosis of NFL and superconductivity implies that these two phenomena are intimately related. Further study on the pressure-dependent upper critical field reveals that the two-band effects are also gradually weakened with increasing pressure and reduced to the one-band Werthamer-Helfand-Hohenberg limit in the low-Tc regime. Overall, our paper supports the picture that NFL, multigap, and extreme RH(T ) are all of the same magnetic origin, i.e., the spin fluctuations in the 112 iron arsenide superconductors.

Search for Extended Sources in the Galactic Plane Using Six Years of Fermi-Large Area Telescope Pass 8 Data above 10 GeV

DOE PAGES

Ackermann, M.; Ajello, M.; Baldini, L.; ...

2017-07-10

The spatial extension of a γ-ray source is an essential ingredient to determine its spectral properties, as well as its potential multiwavelength counterpart. The capability to spatially resolve γ-ray sources is greatly improved by the newly delivered Fermi-Large Area Telescope (LAT) Pass 8 event-level analysis, which provides a greater acceptance and an improved point-spread function, two crucial factors for the detection of extended sources. Here, we present a complete search for extended sources located within 7° from the Galactic plane, using 6 yr of Fermi-LAT data above 10 GeV. We find 46 extended sources and provide their morphological and spectralmore » characteristics. As a result, this constitutes the first catalog of hard Fermi-LAT extended sources, named the Fermi Galactic Extended Source Catalog, which allows a thorough study of the properties of the Galactic plane in the sub-TeV domain.« less

Search for Extended Sources in the Galactic Plane Using Six Years of Fermi -Large Area Telescope Pass 8 Data above 10 GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.; Buehler, R.; Ajello, M.

The spatial extension of a γ -ray source is an essential ingredient to determine its spectral properties, as well as its potential multiwavelength counterpart. The capability to spatially resolve γ -ray sources is greatly improved by the newly delivered Fermi -Large Area Telescope (LAT) Pass 8 event-level analysis, which provides a greater acceptance and an improved point-spread function, two crucial factors for the detection of extended sources. Here, we present a complete search for extended sources located within 7° from the Galactic plane, using 6 yr of Fermi -LAT data above 10 GeV. We find 46 extended sources and providemore » their morphological and spectral characteristics. This constitutes the first catalog of hard Fermi -LAT extended sources, named the Fermi Galactic Extended Source Catalog, which allows a thorough study of the properties of the Galactic plane in the sub-TeV domain.« less

Search for Extended Sources in the Galactic Plane Using Six Years of Fermi-Large Area Telescope Pass 8 Data above 10 GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.; Ajello, M.; Baldini, L.

The spatial extension of a γ-ray source is an essential ingredient to determine its spectral properties, as well as its potential multiwavelength counterpart. The capability to spatially resolve γ-ray sources is greatly improved by the newly delivered Fermi-Large Area Telescope (LAT) Pass 8 event-level analysis, which provides a greater acceptance and an improved point-spread function, two crucial factors for the detection of extended sources. Here, we present a complete search for extended sources located within 7° from the Galactic plane, using 6 yr of Fermi-LAT data above 10 GeV. We find 46 extended sources and provide their morphological and spectralmore » characteristics. As a result, this constitutes the first catalog of hard Fermi-LAT extended sources, named the Fermi Galactic Extended Source Catalog, which allows a thorough study of the properties of the Galactic plane in the sub-TeV domain.« less

Search for Extended Sources in the Galactic Plane Using Six Years of Fermi-Large Area Telescope Pass 8 Data above 10 GeV

NASA Astrophysics Data System (ADS)

Ackermann, M.; Ajello, M.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Bellazzini, R.; Bissaldi, E.; Bloom, E. D.; Bonino, R.; Bottacini, E.; Brandt, T. J.; Bregeon, J.; Bruel, P.; Buehler, R.; Cameron, R. A.; Caragiulo, M.; Caraveo, P. A.; Castro, D.; Cavazzuti, E.; Cecchi, C.; Charles, E.; Chekhtman, A.; Cheung, C. C.; Chiaro, G.; Ciprini, S.; Cohen, J. M.; Costantin, D.; Costanza, F.; Cutini, S.; D'Ammando, F.; de Palma, F.; Desiante, R.; Digel, S. W.; Di Lalla, N.; Di Mauro, M.; Di Venere, L.; Favuzzi, C.; Fegan, S. J.; Ferrara, E. C.; Franckowiak, A.; Fukazawa, Y.; Funk, S.; Fusco, P.; Gargano, F.; Gasparrini, D.; Giglietto, N.; Giordano, F.; Giroletti, M.; Green, D.; Grenier, I. A.; Grondin, M.-H.; Guillemot, L.; Guiriec, S.; Harding, A. K.; Hays, E.; Hewitt, J. W.; Horan, D.; Hou, X.; Jóhannesson, G.; Kamae, T.; Kuss, M.; La Mura, G.; Larsson, S.; Lemoine-Goumard, M.; Li, J.; Longo, F.; Loparco, F.; Lubrano, P.; Magill, J. D.; Maldera, S.; Malyshev, D.; Manfreda, A.; Mazziotta, M. N.; Michelson, P. F.; Mitthumsiri, W.; Mizuno, T.; Monzani, M. E.; Morselli, A.; Moskalenko, I. V.; Negro, M.; Nuss, E.; Ohsugi, T.; Omodei, N.; Orienti, M.; Orlando, E.; Ormes, J. F.; Paliya, V. S.; Paneque, D.; Perkins, J. S.; Persic, M.; Pesce-Rollins, M.; Petrosian, V.; Piron, F.; Porter, T. A.; Principe, G.; Rainò, S.; Rando, R.; Razzano, M.; Razzaque, S.; Reimer, A.; Reimer, O.; Reposeur, T.; Sgrò, C.; Simone, D.; Siskind, E. J.; Spada, F.; Spandre, G.; Spinelli, P.; Suson, D. J.; Tak, D.; Thayer, J. B.; Thompson, D. J.; Torres, D. F.; Tosti, G.; Troja, E.; Vianello, G.; Wood, K. S.; Wood, M.

2017-07-01

The spatial extension of a γ-ray source is an essential ingredient to determine its spectral properties, as well as its potential multiwavelength counterpart. The capability to spatially resolve γ-ray sources is greatly improved by the newly delivered Fermi-Large Area Telescope (LAT) Pass 8 event-level analysis, which provides a greater acceptance and an improved point-spread function, two crucial factors for the detection of extended sources. Here, we present a complete search for extended sources located within 7° from the Galactic plane, using 6 yr of Fermi-LAT data above 10 GeV. We find 46 extended sources and provide their morphological and spectral characteristics. This constitutes the first catalog of hard Fermi-LAT extended sources, named the Fermi Galactic Extended Source Catalog, which allows a thorough study of the properties of the Galactic plane in the sub-TeV domain.

Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs

NASA Technical Reports Server (NTRS)

Lagowski, J.; Gatos, H. C.; Lin, D. G.; Aoyama, T.

1984-01-01

A striking effect of the Fermi energy on the dislocation density in melt-grown GaAs has been discovered. Thus, a shift of the Fermi energy from 0.1 eV above to 0.2 eV below its intrinsic value (at high temperature, i.e., near 1100 K) increases the dislocation density by as much as five orders of magnitude. The Fermi energy shift was brought about by n-type and p-type doping at a level of about 10 to the 17th per cu cm (under conditions of optimum partial pressure of As, i.e., under optimum melt stoichiometry). This effect must be associated with the fact that the Fermi energy controls the charge state of vacancies (i.e., the occupancy of the associated electronic states) which in turn must control their tendency to coalesce and thus the dislocation density. It appears most likely that gallium vacancies are the critical species.

Orbital-dependent electron correlation effects in iron-based superconductors

NASA Astrophysics Data System (ADS)

Yi, Ming

The iron chalcogenide superconductors constitute arguably one of the most intriguing families of the iron-based high temperature superconductors given their ability to superconduct at comparable temperatures as the iron pnictides, despite the lack of similarities in their magnetic structures and Fermi surface topologies. In particular, the lack of hole Fermi pockets at the Brillouin zone center posts a challenge to the previous proposal of spin fluctuation mediated pairing via Fermi surface nesting. In this talk, using angle-resolved photoemission spectroscopy measurements, I will present evidence that show that instead of Fermi surface topology, strong electron correlation observed in electron bandwidth is an important ingredient for superconductivity in the iron chalcogenides. Specifically, I will show i) there exists universal strong orbital-selective renormalization effects and proximity to an orbital-selective Mott phase in Fe1+yTe1-xSex, AxFe2-ySe2, and monolayer FeSe film on SrTiO3, and ii) in RbxFe2(Se1-zSz)2 , where sulfur substitution for selenium continuously suppresses superconductivity down to zero, little change occurs in the Fermi surface topology while a substantial reduction of electron correlation is observed in an expansion of the overall bandwidth, implying that electron correlation is one of the key tuning parameters for superconductivity in these materials.

Modeling Emerging Solar Cell Materials and Devices

NASA Astrophysics Data System (ADS)

Thongprong, Non

Organic photovoltaics (OPVs) and perovskite solar cells are emerging classes of solar cell that are promising for clean energy alternatives to fossil fuels. Understanding fundamental physics of these materials is crucial for improving their energy conversion efficiencies and promoting them to practical applications. Current density-voltage (JV) curves; which are important indicators of OPV efficiency, have direct connections to many fundamental properties of solar cells. They can be described by the Shockley diode equation, resulting in fitting parameters; series and parallel resistance (Rs and Rp), diode saturation current ( J0) and ideality factor (n). However, the Shockley equation was developed specifically for inorganic p-n junction diodes, so it lacks physical meanings when it is applied to OPVs. Hence, the puRposes of this work are to understand the fundamental physics of OPVs and to develop new diode equations in the same form as the Shockley equation that are based on OPV physics. We develop a numerical drift-diffusion simulation model to study bilayer OPVs, which will be called the drift-diffusion for bilayer interface (DD-BI) model. The model solves Poisson, drift-diffusion and current-continuity equations self-consistently for charge densities and potential profiles of a bilayer device with an organic heterojunction interface described by the GWWF model. We also derive new diode equations that have JV curves consistent with the DD-BI model and thus will be called self-consistent diode (SCD) equations. Using the DD-BI and the SCD model allows us to understand working principles of bilayer OPVs and physical definitions of the Shockley parameters. Due to low carrier mobilities in OPVs, space charge accumulation is common especially near the interface and electrodes. Hence, quasi-Fermi levels (i.e. chemical potentials), which depend on charge densities, are modified around the interface, resulting in a splitting of quasi-Fermi levels that works as a driving potential for the heterojunction diode. This brings about the meaning of R s as the resistance that gives rise to the diode voltage equal to the interface quasi-Fermi level splitting instead of the voltage between the electrodes. Quasi-Fermi levels that drop near the electrodes because of unmatched electrode work functions or due to charge injection can also increase Rs. Furthermore, we are able to study dissociation and recombination rates of bound charge pairs across the interface (i.e. polaron pairs or PPs) and arrive at the physical meaning of Rp as recombination resistance of PPs. In the dark, PP density is very low, so Rp is possibly caused by a tunneling leakage current at the interface. Ideality factors are parameters that depend on the split of quasi-Fermi levels and the ratio of recombination rate to recombination rate at equilibrium. Even though they are related to trap characteristics as normally understood, their relations are complicated and careful inte Rpretations of fitted ideality factors are needed. Our models are successfully applied to actual devices, and useful physics can be deduced, for example differences between the Shockley parameters under dark and illumination conditions. Another puRpose of this thesis is to study electronic properties of CsSnBr3 perovskite and processes of growing the perovskite film using an epitaxy technique. Calculation results using density functional theory reveal that a CsSnBr3 film that is grown on a NaCl(100) substrate can undergo a phase transition to CsSn 2Br5, which is a wide-bandgap semiconductor material. Actual mechanisms of the transition and the interface between CsSnBr3 and CsSn2Br5are interesting for future studies.

Electronic structure of dense Pb overlayers on Si(111) investigated using angle-resolved photoemission

NASA Astrophysics Data System (ADS)

Choi, W. H.; Koh, H.; Rotenberg, E.; Yeom, H. W.

2007-02-01

Dense Pb overlayers on Si(111) are important as the wetting layer for anomalous Pb island growth as well as for their own complex “devil’s-staircase” phases. The electronic structures of dense Pb overlayers on Si(111) were investigated in detail by angle-resolved photoemission. Among the series of ordered phases found recently above one monolayer, the low-coverage 7×3 and the high-coverage 14×3 phases are studied; they are well ordered and form reproducibly in large areas. The band dispersions and Fermi surfaces of the two-dimensional (2D) electronic states of these overlayers are mapped out. A number of metallic surface-state bands are identified for both phases with complex Fermi contours. The basic features of the observed Fermi contours can be explained by overlapping 2D free-electron-like Fermi circles. This analysis reveals that the 2D electrons near the Fermi level of the 7×3 and 14×3 phases are mainly governed by strong 1×1 and 3×3 potentials, respectively. The origins of the 2D electronic states and their apparent Fermi surface shapes are discussed based on recent structure models.

Possible origin of photoconductivity in La0.7Ca0.3MnO3

NASA Astrophysics Data System (ADS)

Sagdeo, P. R.; Choudhary, R. J.; Phase, D. M.

2010-01-01

The effect of photon energy on the density of states near Fermi level of pulsed laser deposited La0.7Ca0.3MnO3 thin film has been studied to investigate the possible origin of change in the conductivity of these manganites upon photon exposure. For this purpose the photoelectron spectroscopy measurements were carried out using CSR beamline (BL-2) on Indus-1 synchrotron radiation source. The valance band spectra were measured at room temperature with photon energy ranging from 40 to 60 eV. We could see huge change in the density of states near Fermi level and this change is observed to be highest at 56 eV which is due to the resonance between Mn 3p to Mn 3d level. Our results suggest that the probability of electron transfer from deep Mn 3p level to Mn 3d-eg level is higher than that of Mn 3d-t2g level. It appears that this transfer of electron from deep Mn level to Mn 3d-eg level not only modifies the density of state near Fermi level but also changes the mobility of electrons by modifying the electron lattice coupling due to presence of Mn+3 Jahn-Teller ion.

Optical conductivity of an interacting Weyl liquid in the collisionless regime

NASA Astrophysics Data System (ADS)

Roy, Bitan; Juričić, Vladimir

2017-10-01

Optical conductivity (OC) can serve as a measure of correlation effects in a wide range of condensed-matter systems. We show that the long-range tail of the Coulomb interaction yields a universal correction to the OC in a three-dimensional Weyl semimetal σ (Ω ) =σ0(Ω ) [1 +1/N +1 ] , where σ0(Ω ) =N e02Ω /(12 h v ) is the OC in the noninteracting system, with v as the actual (renormalized) Fermi velocity of Weyl quasiparticles at frequency Ω , and e0 is the electron charge in vacuum. Such universal enhancement of OC, which depends only on the number of Weyl nodes near the Fermi level (N ), is a remarkable consequence of an intriguing conspiracy among the quantum-critical nature of an interacting Weyl liquid, marginal irrelevance of the long-range Coulomb interaction, and violation of hyperscaling in three dimensions, and can directly be measured in recently discovered Weyl as well as Dirac materials. By contrast, a local density-density interaction produces a nonuniversal correction to the OC, stemming from the nonrenormalizable nature of the corresponding interacting field theory.

Constraining Dark Matter Models from a Combined Analysis of Milky Way Satellites with the Fermi Large Area Telescope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.; Ajello, M.; /Stanford U., HEPL /Taiwan, Natl. Taiwan U. /SLAC

Satellite galaxies of the Milky Way are among the most promising targets for dark matter searches in gamma rays. We present a search for dark matter consisting of weakly interacting massive particles, applying a joint likelihood analysis to 10 satellite galaxies with 24 months of data of the Fermi Large Area Telescope. No dark matter signal is detected. Including the uncertainty in the dark matter distribution, robust upper limits are placed on dark matter annihilation cross sections. The 95% confidence level upper limits range from about 10{sup -26} cm{sup 3} s{sup -1} at 5 GeV to about 5 x 10{supmore » -23} cm{sup 3} s{sup -1} at 1 TeV, depending on the dark matter annihilation final state. For the first time, using gamma rays, we are able to rule out models with the most generic cross section ({approx}3 x 10{sup -26} cm{sup 3} s{sup -1} for a purely s-wave cross section), without assuming additional boost factors.« less

Constraining dark matter models from a combined analysis of Milky Way satellites with the Fermi Large Area Telescope.

PubMed

Ackermann, M; Ajello, M; Albert, A; Atwood, W B; Baldini, L; Ballet, J; Barbiellini, G; Bastieri, D; Bechtol, K; Bellazzini, R; Berenji, B; Blandford, R D; Bloom, E D; Bonamente, E; Borgland, A W; Bregeon, J; Brigida, M; Bruel, P; Buehler, R; Burnett, T H; Buson, S; Caliandro, G A; Cameron, R A; Cañadas, B; Caraveo, P A; Casandjian, J M; Cecchi, C; Charles, E; Chekhtman, A; Chiang, J; Ciprini, S; Claus, R; Cohen-Tanugi, J; Conrad, J; Cutini, S; de Angelis, A; de Palma, F; Dermer, C D; Digel, S W; do Couto e Silva, E; Drell, P S; Drlica-Wagner, A; Falletti, L; Favuzzi, C; Fegan, S J; Ferrara, E C; Fukazawa, Y; Funk, S; Fusco, P; Gargano, F; Gasparrini, D; Gehrels, N; Germani, S; Giglietto, N; Giordano, F; Giroletti, M; Glanzman, T; Godfrey, G; Grenier, I A; Guiriec, S; Gustafsson, M; Hadasch, D; Hayashida, M; Hays, E; Hughes, R E; Jeltema, T E; Jóhannesson, G; Johnson, R P; Johnson, A S; Kamae, T; Katagiri, H; Kataoka, J; Knödlseder, J; Kuss, M; Lande, J; Latronico, L; Lionetto, A M; Llena Garde, M; Longo, F; Loparco, F; Lott, B; Lovellette, M N; Lubrano, P; Madejski, G M; Mazziotta, M N; McEnery, J E; Mehault, J; Michelson, P F; Mitthumsiri, W; Mizuno, T; Monte, C; Monzani, M E; Morselli, A; Moskalenko, I V; Murgia, S; Naumann-Godo, M; Norris, J P; Nuss, E; Ohsugi, T; Okumura, A; Omodei, N; Orlando, E; Ormes, J F; Ozaki, M; Paneque, D; Parent, D; Pesce-Rollins, M; Pierbattista, M; Piron, F; Pivato, G; Porter, T A; Profumo, S; Rainò, S; Razzano, M; Reimer, A; Reimer, O; Ritz, S; Roth, M; Sadrozinski, H F-W; Sbarra, C; Scargle, J D; Schalk, T L; Sgrò, C; Siskind, E J; Spandre, G; Spinelli, P; Strigari, L; Suson, D J; Tajima, H; Takahashi, H; Tanaka, T; Thayer, J G; Thayer, J B; Thompson, D J; Tibaldo, L; Tinivella, M; Torres, D F; Troja, E; Uchiyama, Y; Vandenbroucke, J; Vasileiou, V; Vianello, G; Vitale, V; Waite, A P; Wang, P; Winer, B L; Wood, K S; Wood, M; Yang, Z; Zimmer, S; Kaplinghat, M; Martinez, G D

2011-12-09

Satellite galaxies of the Milky Way are among the most promising targets for dark matter searches in gamma rays. We present a search for dark matter consisting of weakly interacting massive particles, applying a joint likelihood analysis to 10 satellite galaxies with 24 months of data of the Fermi Large Area Telescope. No dark matter signal is detected. Including the uncertainty in the dark matter distribution, robust upper limits are placed on dark matter annihilation cross sections. The 95% confidence level upper limits range from about 10(-26)  cm3  s(-1) at 5 GeV to about 5×10(-23)   cm3  s(-1) at 1 TeV, depending on the dark matter annihilation final state. For the first time, using gamma rays, we are able to rule out models with the most generic cross section (∼3×10(-26)  cm3  s(-1) for a purely s-wave cross section), without assuming additional boost factors.

Anomalous Nernst effect in type-II Weyl semimetals

NASA Astrophysics Data System (ADS)

Saha, Subhodip; Tewari, Sumanta

2018-01-01

Topological Weyl semimetals (WSM), a new state of quantum matter with gapless nodal bulk spectrum and open Fermi arc surface states, have recently sparked enormous interest in condensed matter physics. Based on the symmetry and fermiology, it has been proposed that WSMs can be broadly classified into two types, type-I and type-II Weyl semimetals. While the undoped, conventional, type-I WSMs have point like Fermi surface and vanishing density of states (DOS) at the Fermi energy, the type-II Weyl semimetals break Lorentz symmetry explicitly and have tilted conical spectra with electron and hole pockets producing finite DOS at the Fermi level. The tilted conical spectrum and finite DOS at Fermi level in type-II WSMs have recently been shown to produce interesting effects such as a chiral anomaly induced longitudinal magnetoresistance that is strongly anisotropic in direction and a novel anomalous Hall effect. In this work, we consider the anomalous Nernst effect in type-II WSMs in the absence of an external magnetic field using the framework of semi-classical Boltzmann theory. Based on both a linearized model of time-reversal breaking WSM with a higher energy cut-off and a more realistic lattice model, we show that the anomalous Nernst response in these systems is strongly anisotropic in space, and can serve as a reliable signature of type-II Weyl semimetals in a host of magnetic systems with spontaneously broken time reversal symmetry.

Crystal growth of Dirac semimetal ZrSiS with high magnetoresistance and mobility.

PubMed

Sankar, Raman; Peramaiyan, G; Muthuselvam, I Panneer; Butler, Christopher J; Dimitri, Klauss; Neupane, Madhab; Rao, G Narsinga; Lin, M-T; Chou, F C

2017-01-18

High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (R H ), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ (100) and Iǁ (110) were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (R H ) showed hole-dominated carriers with a high mobility of 3.05 × 10 4  cm 2 V -1 s -1 at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS).

Electronic structures of of PuX (X=S, Se, Te)

NASA Astrophysics Data System (ADS)

Maehira, Takahiro; Sakai, Eijiro; Tatetsu, Yasutomi

2013-08-01

We have calculated the energy band structures and the Fermi surfaces of PuS, PuSe, and PuTe by using a self-consistent relativistic linear augmented-plane-wave method with the exchange and correlation potential in the local density approximation. In general, the energy bands near the Fermi level are mainly caused by the hybridization between the Pu 5 f and the monochalcogenide p electrons. The obtained main Fermi surfaces consisted of two hole sheets and one electron sheet, which were constructed from the band having both the Pu 5 f state and the monochalcogenide p state.

Thomas-Fermi approximation for a condensate with higher-order interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thoegersen, M.; Jensen, A. S.; Zinner, N. T.

We consider the ground state of a harmonically trapped Bose-Einstein condensate within the Gross-Pitaevskii theory including the effective-range corrections for a two-body zero-range potential. The resulting nonlinear Schroedinger equation is solved analytically in the Thomas-Fermi approximation neglecting the kinetic-energy term. We present results for the chemical potential and the condensate profiles, discuss boundary conditions, and compare to the usual Thomas-Fermi approach. We discuss several ways to increase the influence of effective-range corrections in experiment with magnetically tunable interactions. The level of tuning required could be inside experimental reach in the near future.

Studies of molecular physics in sodium-potassium: An analysis of the 4(3)Sigma+ state and interactions between the 2(A)(1)Sigma+ and 1(b)(3)Pi states

NASA Astrophysics Data System (ADS)

Burns, Patrick

2004-12-01

In this dissertation we report the results of three experiments designed to provide new information on the structure and interactions of the NaK molecule. Specifically these experiments investigate 2(A)1Sigma +(upsilonA, J) + M → 1(b)3 pi0(upsilonb, J) + M collisional excitation transfers (where M is a collision partner), hyperfine structure of the NaK 1(b)3pi and 1(b)3pi0 ˜ 2(A)1Sigma+ spin-orbit interactions, and the structure and spectra of the NaK 43Sigma+ state, respectively. In this first experiment, populations of collisionally populated levels were recorded near the NaK 1(b)3pi0(upsilon =18, J = 44) ˜ 2(A)1Sigma+ (upsilon = 20, J = 44) center of spin-orbit perturbation. Our data indicate that population is transferred from the pumped level, 2(A) 1Sigma+(upsilon = 20, J = 49), directly to the surrounding "daughter" levels [1(b)3Sigma 0(upsilon =18, J = 45--48) and 2(A)1Sigma +(upsilon = 20, J = 45--48)]. The relative populations of the daughter levels appear anomalous, as their populations do not monotonically decrease for levels further away in energy from the pumped level. We have measured the hyperfine structure of mutually perturbing ro-vibrational levels of the 1(b)3pi0 and 2(A)1Sigma + states of the NaK molecule, using the PFOODR method with co-propagating lasers. Unperturbed 1(b)3pi0 levels are split into four hyperfine components by the Fermi contact interaction b FI·S. Mixing between the 1(b)3pi0 and 2(A)1Sigma + levels imparts hyperfine structure to the nominally singlet component, and reduces the hyperfine splitting of the nominally triplet component, of the perturbed levels. We determined a value for the Fermi constant, bF= (0.00989 +/- 0.00027) cm-1, and the magnitude of the electronic part of the 1(b)3pi 0 ˜ 2(A)1Sigma+ spin-orbit coupling, |Hel| = (15.65 +/- 0.14) cm-1 , from an analysis of the measured hyperfine splittings of the mixed singlet-triplet levels. High-resolution spectra have been observed for numerous vibrational-rotational levels (upsilon, N) of the 43Sigma + state of NaK. A potential curve was obtained from the data using the inverse perturbation approximation method. Measured bound-free emission, 43Sigma+ → 1(a)3Sigma +, was used to determine both the absolute vibrational numbering and the transition dipole moment function M(R). Each (upsilon, N) level is typically split into three sets of sublevels by the Fermi contact interaction bFI·S. Further splitting (of order 0.004 cm-1) has been attributed to the spin-rotation interaction gammaN·S. The values of bF that fit the data best are ˜(0.99 +/- 0.04) x 10-2 cm-1, with weak dependence on upsilon. The best fit values of gamma are in the range 1--6 x 10-4 cm-1 and depend strongly on upsilon.

New Theoretical Estimates of the Contribution of Unresolved Star-Forming Galaxies to the Extragalactic Gamma-Ray Background (EGB) as Measured by EGRET and the Fermi-LAT

NASA Technical Reports Server (NTRS)

Venters, Tonia M.

2011-01-01

We present new theoretical estimates of the contribution of unresolved star-forming galaxies to the extragalactic gamma-ray background (EGB) as measured by EGRET and the Fermi-LAT. We employ several methods for determining the star-forming galaxy contribution the the EGB, including a method positing a correlation between the gamma-ray luminosity of a galaxy and its rate of star formation as calculated from the total infrared luminosity, and a method that makes use of a model of the evolution of the galaxy gas mass with cosmic time. We find that depending on the model, unresolved star-forming galaxies could contribute significantly to the EGB as measured by the Fermi-LAT at energies between approx. 300 MeV and approx. few GeV. However, the overall spectrum of unresolved star-forming galaxies can explain neither the EGRET EGB spectrum at energies between 50 and 200 MeV nor the Fermi-LAT EGB spectrum at energies above approx. few GeV.

Magnetic field-induced Fermi surface reconstruction and quantum criticality in CeRhIn 5

DOE PAGES

Jiao, Lin; Weng, Z. F.; Smidman, Michael; ...

2017-02-06

Here, we present detailed results of the field evolution of the de Haas–van Alphen (dHvA) effect in CeRhIn 5. A magnetic field-induced reconstruction of the Fermi surface is clearly shown to occur inside the antiferromagnetic state, in an applied field of around B* ≃ 30 T, which is evidenced by the appearance of several new dHvA branches. The angular dependence of the dHvA frequencies reveals that the Fermi surfaces of CeRhIn 5 at B > B* and CeCoIn5 are similar. The results suggest that the Ce-4f electrons in become itinerant at B > B* due to the Kondo effect, priormore » to the field-induced quantum critical point (QCP) at Bc0 ≃ 50 T. The electronic states at the field-induced QCP are therefore different from that of the pressure-induced QCP where a dramatic Fermi surface reconstruction occurs exactly at the critical pressure, indicating that multiple types of QCP may exist in CeRhIn 5.« less

Effective mass and Fermi surface complexity factor from ab initio band structure calculations

NASA Astrophysics Data System (ADS)

Gibbs, Zachary M.; Ricci, Francesco; Li, Guodong; Zhu, Hong; Persson, Kristin; Ceder, Gerbrand; Hautier, Geoffroy; Jain, Anubhav; Snyder, G. Jeffrey

2017-02-01

The effective mass is a convenient descriptor of the electronic band structure used to characterize the density of states and electron transport based on a free electron model. While effective mass is an excellent first-order descriptor in real systems, the exact value can have several definitions, each of which describe a different aspect of electron transport. Here we use Boltzmann transport calculations applied to ab initio band structures to extract a density-of-states effective mass from the Seebeck Coefficient and an inertial mass from the electrical conductivity to characterize the band structure irrespective of the exact scattering mechanism. We identify a Fermi Surface Complexity Factor: Nv*K* from the ratio of these two masses, which in simple cases depends on the number of Fermi surface pockets (Nv* ) and their anisotropy K*, both of which are beneficial to high thermoelectric performance as exemplified by the high values found in PbTe. The Fermi Surface Complexity factor can be used in high-throughput search of promising thermoelectric materials.

Communication: The electronic entropy of charged defect formation and its impact on thermochemical redox cycles

NASA Astrophysics Data System (ADS)

Lany, Stephan

2018-02-01

The ideal material for solar thermochemical water splitting, which has yet to be discovered, must satisfy stringent conditions for the free energy of reduction, including, in particular, a sufficiently large positive contribution from the solid-state entropy. By inverting the commonly used relationship between defect formation energy and defect concentration, it is shown here that charged defect formation causes a large electronic entropy contribution manifesting itself as the temperature dependence of the Fermi level. This result is a general feature of charged defect formation and motivates new materials design principles for solar thermochemical hydrogen production.

Laser magnetic resonance in supersonic plasmas - The rotational spectrum of SH(+)

NASA Technical Reports Server (NTRS)

Hovde, David C.; Saykally, Richard J.

1987-01-01

The rotational spectrum of v = 0 and v = 1X3Sigma(-)SH(+) was measured by laser magnetic resonance. Rotationally cold (Tr = 30 K), vibrationally excited (Tv = 3000 K) ions were generated in a corona excited supersonic expansion. The use of this source to identify ion signals is described. Improved molecular parameters were obtained; term values are presented from which astrophysically important transitions may be calculated. Accurate hyperfine parameters for both vibrational levels were determined and the vibrational dependence of the Fermi contact interaction was resolved. The hyperfine parameters agree well with recent many-body perturbation theory calculations.

Communication: The electronic entropy of charged defect formation and its impact on thermochemical redox cycles

DOE PAGES

Lany, Stephan

2018-02-21

The ideal material for solar thermochemical water splitting, which has yet to be discovered, must satisfy stringent conditions for the free energy of reduction, including, in particular, a sufficiently large positive contribution from the solid-state entropy. By inverting the commonly used relationship between defect formation energy and defect concentration, it is shown here that charged defect formation causes a large electronic entropy contribution manifesting itself as the temperature dependence of the Fermi level. This result is a general feature of charged defect formation and motivates new materials design principles for solar thermochemical hydrogen production.

Communication: The electronic entropy of charged defect formation and its impact on thermochemical redox cycles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lany, Stephan

The ideal material for solar thermochemical water splitting, which has yet to be discovered, must satisfy stringent conditions for the free energy of reduction, including, in particular, a sufficiently large positive contribution from the solid-state entropy. By inverting the commonly used relationship between defect formation energy and defect concentration, it is shown here that charged defect formation causes a large electronic entropy contribution manifesting itself as the temperature dependence of the Fermi level. This result is a general feature of charged defect formation and motivates new materials design principles for solar thermochemical hydrogen production.

Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Altuhov, V. I., E-mail: altukhovv@mail.ru; Kasyanenko, I. S.; Sankin, A. V.

2016-09-15

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC){sub 1–x}(AlN){sub x} structures. The results of calculations are compared to experimental data.

Utilization of the Boltzmann tail of TED for the calculation of the ``absolute'' work function and local field strength in FEM

NASA Astrophysics Data System (ADS)

Wysocki, J. K.

1984-02-01

The idea of Young and Clark of independent evaluation of the work function φ and electric field strength F in FEM [R.D. Young and H.E. Clark, Phys. Rev. Letters 17 (1966) 351] has been extended to the energy region above the Fermi level. The estimation of slowly varying elliptic functions, necessary to compute φ and F, using only experimental data is presented. Calculations for the W(111) plane using the field electron energy distribution and the integral field-emission current dependence on retarding voltage have been performed.

Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Debehets, J.; Homm, P.; Menghini, M.

In this paper, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate detector and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-level. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-levelmore » pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs. This work has been funded by J.D.'s PhD fellowship of the Fund of Scientific Research-Flanders (FWO-V) (Dossier No. 11U4516N). P.H. acknowledges support from Becas Chile-CONICYT. This research was also supported by the FWO Odysseus Program, the Belgian Hercules Stichting with the Project No. Her/08/25 and AKUL/13/19 and the KU Leuven project GOA "Fundamental challenges in Semiconductor Research". The authors would also like to thank Bastiaan Opperdoes and Ludwig Henderix for technical support. The work was supported by the U.S. Department of Energy (USDOE), Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, and performed in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory (PNNL). Battelle operates PNNL for the USDOE under contract DE-AC05-76RL01830.« less

Polarized Fermi Condensates with Unequal Masses: Tuning the Tricritical Point

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parish, M. M.; Marchetti, F. M.; Simons, B. D.

We consider a two-component atomic Fermi gas within a mean-field, single-channel model, where both the mass and population of each component are unequal. We show that the tricritical point at zero temperature evolves smoothly from the BEC to BCS side of the resonance as a function of mass ratio r. We find that the interior gap state proposed by Liu and Wilczek is always unstable to phase separation, while the breached pair state with one Fermi surface for the excess fermions exhibits differences in its density of states and pair correlation functions depending on which side of the resonance itmore » lies. Finally, we show that, when r > or appro. 3.95, the finite-temperature phase diagram of trapped gases at unitarity becomes topologically distinct from the equal mass system.« less

New bounds on axionlike particles from the Fermi Large Area Telescope observation of PKS 2155 -304

NASA Astrophysics Data System (ADS)

Zhang, Cun; Liang, Yun-Feng; Li, Shang; Liao, Neng-Hui; Feng, Lei; Yuan, Qiang; Fan, Yi-Zhong; Ren, Zhong-Zhou

2018-03-01

The axionlike particle (ALP)-photon mixing in the magnetic field around γ -ray sources or along the line of sight could induce oscillation between photons and ALPs, which then causes irregularities in the γ -ray spectra. In this work we search for such spectral irregularities in the spectrum of PKS 2155 -304 using 8.6 years of data from the Fermi Large Area Telescope (Fermi-LAT). No significant evidence for the presence of ALP-photon oscillation is obtained, and the parameter space of ALPs is constrained. The exclusion region sensitively depends on the poorly known magnetic field of the host galaxy cluster of PKS 2155 -304 . If the magnetic field is as high as ˜10 μ G , the "holelike" parameter region allowed in Ref. [1] can be ruled out.

Weyl Superfluidity in a Three-dimensional Dipolar Fermi Gas

NASA Astrophysics Data System (ADS)

Liu, Bo; Li, Xiaopeng; Yin, Lan; Liu, W. Vincent

2015-03-01

Weyl superconductivity or superfluidity, a fascinating topological state of matter, features novel phenomena such as emergent Weyl fermionic excitations and anomalies. Here we report that an anisotropic Weyl superfluid state can arise as a low temperature stable phase in a 3D dipolar Fermi gas. A crucial ingredient of our model is a direction-dependent two-body effective attraction generated by a rotating external field. Experimental signatures are predicted for cold gases in radio-frequency spectroscopy. The finite temperature phase diagram of this system is studied and the transition temperature of the Weyl superfluidity is found to be within the experimental scope for atomic dipolar Fermi gases. Work supported in part by U.S. ARO, AFOSR, DARPA-OLE-ARO, Charles E. Kaufman Foundation and The Pittsburgh Foundation, JQI-NSF-PFC, ARO-Atomtronics-MURI, and NSF of China.

Two-component Fermi-liquid theory - Equilibrium properties of liquid metallic hydrogen

NASA Technical Reports Server (NTRS)

Oliva, J.; Ashcroft, N. W.

1981-01-01

It is reported that the transition of condensed hydrogen from an insulating molecular crystal phase to a metallic liquid phase, at zero temperature and high pressure, appears possible. Liquid metallic hydrogen (LMH), comprising interpenetrating proton and electron fluids, would constitute a two-component Fermi liquid with both a very high component-mass ratio and long-range, species-dependent bare interactions. The low-temperature equilibrium properties of LMH are examined by means of a generalization to the case of two components of the phenomenological Landau Fermi-liquid theory, and the low-temperature specific heat, compressibility, thermal expansion coefficient and spin susceptibility are given. It is found that the specific heat and the thermal expansion coefficient are vastly greater in the liquid than in the corresponding solid, due to the presence of proton quasiparticle excitations in the liquid.

Warm ''pasta'' phase in the Thomas-Fermi approximation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avancini, Sidney S.; Menezes, Debora P.; Chiacchiera, Silvia

In the present article, the 'pasta' phase is studied at finite temperatures within a Thomas-Fermi (TF) approach. Relativistic mean-field models, both with constant and density-dependent couplings, are used to describe this frustrated system. We compare the present results with previous ones obtained within a phase-coexistence description and conclude that the TF approximation gives rise to a richer inner ''pasta'' phase structure and the homogeneous matter appears at higher densities. Finally, the transition density calculated within TF is compared with the results for this quantity obtained with other methods.

Space Detectors for Gamma Rays (100 MeV-100 GeV): from Egret to Fermi LAT

NASA Technical Reports Server (NTRS)

Thompson, David J.

2015-01-01

The design of spaceborne high-energy (E is greater than 100 MeV) gamma-ray detectors depends on two principal factors: (1) the basic physics of detecting and measuring the properties of the gamma rays; and (2) the constraints of operating such a detector in space for an extended period. Improvements in technology have enabled major advances in detector performance, as illustrated by two successful instruments, EGRET on the Compton Gamma Ray Observatory and LAT on the Fermi Gamma-ray Space Telescope.

Suppression of the "Quasiclassical" proximity gap in correlated-metal--superconductor structures.

PubMed

Nikolić, Branislav K; Freericks, J K; Miller, P

2002-02-18

We study the energy and spatial dependence of the local density of states in a superconductor--correlated-metal--superconductor Josephson junction, where the correlated metal is a non-Fermi liquid (described by the Falicov-Kimball model). Many-body correlations are treated with dynamical mean-field theory, extended to inhomogeneous systems. While quasiclassical theories predict a minigap in the spectrum of a disordered Fermi liquid which is proximity-coupled within a mesoscopic junction, we find that increasing electron correlations destroy any minigap that might be opened in the absence of many-body correlations.

Terahertz spectroscopic evidence of non-Fermi-liquid-like behavior in structurally modulated PrNi O3 thin films

NASA Astrophysics Data System (ADS)

Phanindra, V. Eswara; Agarwal, Piyush; Rana, D. S.

2018-01-01

The intertwined and competing energy scales of various interactions in rare-earth nickelates R Ni O3 (R =La to Lu) hold potential for a wide range of exotic ground states realized upon structural modulation. Using terahertz (THz) spectroscopy, the low-energy dynamics of a novel non-Fermi liquid (NFL) metallic phase induced in compressive PrNi O3 thin film was studied by evaluating the quasiparticle scattering rate in the light of two distinct models over a wide temperature range. First, evaluating THz conductivity in the framework of extended Drude model, the frequency-dependent scattering rate is found to deviate from the Landau Fermi liquid (LFL) behavior, thus, suggesting NFL-like phase at THz frequencies. Second, fitting THz conductivity to the multiband Drude-Lorentz model reveals the band-dependent scattering rates and provides microscopic interpretation of the carriers contributing to the Drude modes. This is first evidence of NFL-like behavior in nickelates at THz frequencies consistent with dc conductivity, which also suggests that THz technology is indispensable in understanding emerging electronic phases and associated phenomena. We further demonstrate that the metal-insulator transition in nickelates has the potential to design efficient THz modulators.

Study of sulfur bonding on gallium arsenide (100) surfaces using supercritical fluid extraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabauy, P.; Darici, Y.; Furton, K.G.

1995-12-01

In the last decades Gallium Arsenide (GaAs) has been considered the semiconductor that will replace silicon because of its direct band gap and high electron mobility. Problems with GaAs Fermi level pinning has halted its widespread use in the electronics industry. The formation of oxides on GaAs results in a high density of surface states that effectively pin the surface Fermi level at the midgap. Studies on sulfur passivation have eliminated oxidation and virtually unpinned the Fermi level on the GaAs surface. This has given rise to interest in sulfur-GaAs bonds. In this presentation, we will discuss the types ofmore » sulfur bonds extracted from a sulfur passivated GaAs (100) using Supercritical Fluid (CO2) Extraction (SFE). SFE can be a valuable tool in the study of chemical speciations on semiconductor surfaces. The variables evaluated to effectively study the sulfur species from the GaAs surface include passivation techniques, supercritical fluid temperatures, densities, and extraction times.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Xinfang; White, Ralph E.; Huang, Kevin

With the assumption that the Fermi level (electrochemical potential of electrons) is uniform across the thickness of a mixed ionic and electronic conducting (MIEC) electrode, the charge-transport model in the electrode domain can be reduced to the modified Fick’s first law, which includes a thermodynamic factor A. A transient numerical solution of the Nernst-Planck theory was obtained for a symmetric cell with MIEC electrodes to illustrate the validity of the assumption of a uniform Fermi level. Subsequently, an impedance numerical solution based on the modified Fick’s first law is compared with that from the Nernst-Planck theory. The results show thatmore » Nernst-Planck charge-transport model is essentially the same as the modified Fick’s first law model as long as the MIEC electrodes have a predominant electronic conductivity. However, because of the invalidity of the uniform Fermi level assumption for aMIEC electrolyte with a predominant ionic conductivity, Nernst-Planck theory is needed to describe the charge transport behaviors.« less

Fermi Level shifting, Charge Transfer and Induced Magnetic Coupling at La0.7Ca0.3MnO3/LaNiO3 Interface

PubMed Central

Ning, Xingkun; Wang, Zhanjie; Zhang, Zhidong

2015-01-01

A large magnetic coupling has been observed at the La0.7Ca0.3MnO3/LaNiO3 (LCMO/LNO) interface. The x-ray photoelectron spectroscopy (XPS) study results show that Fermi level continuously shifted across the LCMO/LNO interface in the interface region. In addition, the charge transfer between Mn and Ni ions of the type Mn3+ − Ni3+ → Mn4+ − Ni2+ with the oxygen vacancies are observed in the interface region. The intrinsic interfacial charge transfer can give rise to itinerant electrons, which results in a “shoulder feature” observed at the low binding energy in the Mn 2p core level spectra. Meanwhile, the orbital reconstruction can be mapped according to the Fermi level position and the charge transfer mode. It can be considered that the ferromagnetic interaction between Ni2+ and Mn4+ gives rise to magnetic regions that pin the ferromagnetic LCMO and cause magnetic coupling at the LCMO/LNO interface. PMID:25676088

Experimental differential cross sections, level densities, and spin cutoffs as a testing ground for nuclear reaction codes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voinov, Alexander V.; Grimes, Steven M.; Brune, Carl R.

Proton double-differential cross sections from 59Co(α,p) 62Ni, 57Fe(α,p) 60Co, 56Fe( 7Li,p) 62Ni, and 55Mn( 6Li,p) 60Co reactions have been measured with 21-MeV α and 15-MeV lithium beams. Cross sections have been compared against calculations with the empire reaction code. Different input level density models have been tested. It was found that the Gilbert and Cameron [A. Gilbert and A. G. W. Cameron, Can. J. Phys. 43, 1446 (1965)] level density model is best to reproduce experimental data. Level densities and spin cutoff parameters for 62Ni and 60Co above the excitation energy range of discrete levels (in continuum) have been obtainedmore » with a Monte Carlo technique. Furthermore, excitation energy dependencies were found to be inconsistent with the Fermi-gas model.« less

Fermi orbital derivatives in self-interaction corrected density functional theory: Applications to closed shell atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pederson, Mark R., E-mail: mark.pederson@science.doe.gov

2015-02-14

A recent modification of the Perdew-Zunger self-interaction-correction to the density-functional formalism has provided a framework for explicitly restoring unitary invariance to the expression for the total energy. The formalism depends upon construction of Löwdin orthonormalized Fermi-orbitals which parametrically depend on variational quasi-classical electronic positions. Derivatives of these quasi-classical electronic positions, required for efficient minimization of the self-interaction corrected energy, are derived and tested, here, on atoms. Total energies and ionization energies in closed-shell singlet atoms, where correlation is less important, using the Perdew-Wang 1992 Local Density Approximation (PW92) functional, are in good agreement with experiment and non-relativistic quantum-Monte-Carlo results albeitmore » slightly too low.« less

The LLRF System for the S-Band RF Plants of the FERMI Linac

NASA Astrophysics Data System (ADS)

Fabris, A.; Byrd, J.; D'Auria, G.; Doolittle, L.; Gelmetti, F.; Huang, G.; Jones, J.; Milloch, M.; Predonzani, M.; Ratti, A.; Rohlev, T.; Salom, A.; Serrano, C.; Stettler, M.

2016-04-01

Specifications on electron beam quality for the operation of a linac-based free-electron laser (FEL), as FERMI in Trieste (Italy), impose stringent requirements on the stability of the electromagnetic fields of the accelerating sections. These specifications can be met only with state-of-the-art low-level RF (LLRF) systems based on advanced digital technologies. Design considerations, construction, and performance results of the FERMI digital LLRF are presented in this paper. The stability requirements derived by simulations are better than 0.1% in amplitude and 0.1° S-band in phase. The system installed in the FERMI Linac S-band RF plants has met these specifications and is in operation on a 24-h basis as a user facility. Capabilities of the system allow planning for new developments that are also described here.

Hydrodynamic flows of non-Fermi liquids: Magnetotransport and bilayer drag

NASA Astrophysics Data System (ADS)

Patel, Aavishkar A.; Davison, Richard A.; Levchenko, Alex

2017-11-01

We consider a hydrodynamic description of transport for generic two-dimensional electron systems that lack Galilean invariance and do not fall into the category of Fermi liquids. We study magnetoresistance and show that it is governed only by the electronic viscosity provided that the wavelength of the underlying disorder potential is large compared to the microscopic equilibration length. We also derive the Coulomb drag transresistance for double-layer non-Fermi-liquid systems in the hydrodynamic regime. As an example, we consider frictional drag between two quantum Hall states with half-filled lowest Landau levels, each described by a Fermi surface of composite fermions coupled to a U (1 ) gauge field. We contrast our results to prior calculations of drag of Chern-Simons composite particles and place our findings in the context of available experimental data.

Hall mobility and photoconductivity in TlGaSeS crystals

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Gasanly, N. M.

2013-01-01

In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm-2, respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation.

Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

NASA Astrophysics Data System (ADS)

Sen, A.; Maiti, U. N.; Thapa, R.; Chattopadhyay, K. K.

2011-09-01

Successful incorporation of vanadium dopant within the giant dielectric material CaCu 3Ti 4O12 (CCTO) through a conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N( E f) and hopping distance, R ω of the ceramic were also calculated using this model.

Integrable time-dependent Hamiltonians, solvable Landau-Zener models and Gaudin magnets

NASA Astrophysics Data System (ADS)

Yuzbashyan, Emil A.

2018-05-01

We solve the non-stationary Schrödinger equation for several time-dependent Hamiltonians, such as the BCS Hamiltonian with an interaction strength inversely proportional to time, periodically driven BCS and linearly driven inhomogeneous Dicke models as well as various multi-level Landau-Zener tunneling models. The latter are Demkov-Osherov, bow-tie, and generalized bow-tie models. We show that these Landau-Zener problems and their certain interacting many-body generalizations map to Gaudin magnets in a magnetic field. Moreover, we demonstrate that the time-dependent Schrödinger equation for the above models has a similar structure and is integrable with a similar technique as Knizhnik-Zamolodchikov equations. We also discuss applications of our results to the problem of molecular production in an atomic Fermi gas swept through a Feshbach resonance and to the evaluation of the Landau-Zener transition probabilities.

On the important role of the anti-Jahn-Teller effect in underdoped cuprate superconductors

NASA Astrophysics Data System (ADS)

Kamimura, Hiroshi; Matsuno, Shunichi; Mizokawa, Takashi; Sasaoka, Kenji; Shiraishi, Kenji; Ushio, Hideki

2013-04-01

In this paper it is shown that the "anti-Jahn-Teller effect" plays an essential role in giving rise to a small Fermi surface of Fermi pockets above Tc and d-wave superconductivity below Tc in underdoped cuprates. In the first part of the present paper, we review the latest developments of the model proposed by Kamimura and Suwa, which bears important characteristics born from the interplay of Jahn-Teller Physics and Mott Physics. It is shown that the feature of Fermi surfaces in underdoped LSCO is the Fermi pockets in the nodal region constructed by doped holes under the coexistence of a metallic state and of the local antiferromagnetic order. In the antinodal region in the momentum space, there are no Fermi surfaces. Then it is discussed that the phonon-involved mechanism based on the Kamimura-Suwa model leads to the d-wave superconductivity. In particular, it is shown that the origin of strong electron-phonon interactions in cuprates is due to the anti-Jahn-Teller effect. In the second part a recent theoretical result on the energy distribution curves (EDCs) of angle-resolved photoemission spectroscopy (ARPES) below Tc is discussed. It is shown that the feature of ARPES profiles of underdoped cuprates consists of a coherent peak in the nodal region and the real transitions of photoexcited electrons from occupied states below the Fermi level to a free-electron state above the vacuum level in the antinodal region, where the latter transitions form a broad hump. From this feature, the origin of the two distinct gaps observed by ARPES is elucidated without introducing the concept of the pseudogap. Finally, a remark is made on the phase diagram of underdoped cuprates.

Uncovering the Key Role of the Fermi Level of the Electron Mediator in a Z-Scheme Photocatalyst by Detecting the Charge Transfer Process of WO3-metal-gC3N4 (Metal = Cu, Ag, Au).

PubMed

Li, Houfen; Yu, Hongtao; Quan, Xie; Chen, Shuo; Zhang, Yaobin

2016-01-27

Z-scheme photocatalytic system shows superiority in degradation of refractory pollutants and water splitting due to the high redox capacities caused by its unique charge transfer behaviors. As a key component of Z-scheme system, the electron mediator plays an important role in charge carrier migration. According to the energy band theory, we believe the interfacial energy band bendings facilitate the electron transfer via Z-scheme mechanism when the Fermi level of electron mediator is between the Fermi levels of Photosystem II (PS II) and Photosystem I (PS I), whereas charge transfer is inhibited in other cases as energy band barriers would form at the semiconductor-metal interfaces. Here, this inference was verified by the increased hydroxyl radical generation and improved photocurrent on WO3-Cu-gC3N4 (with the desired Fermi level structure), which were not observed on either WO3-Ag-gC3N4 or WO3-Au-gC3N4. Finally, photocatalytic degradation rate of 4-nonylphenol on WO3-Cu-gC3N4 was proved to be as high as 11.6 times than that of WO3-gC3N4, further demonstrating the necessity of a suitable electron mediator in Z-scheme system. This study provides scientific basis for rational construction of Z-scheme photocatalytic system.

Angle-Dependent Magnetoresistance in Organic Metals

NASA Astrophysics Data System (ADS)

Blundell, Stephen J.; Singleton, John

1996-12-01

Recent experimental studies of the angle-dependent magnetoresistance in various organic metals have been remarkably successful in elucidating the nature of the low-temperature ground state and providing information about the Fermi surface shape which is hard or impossible to obtain using other techniques. We review various theoretical approaches to describe angel-dependent magnetoresistance and a number of important experimental results which have been obtained.

Carrier Transport and Effective Barrier Height of Low Resistance Metal Contact to Highly Mg-Doped p-GaN

NASA Astrophysics Data System (ADS)

Park, Youngjun; Kim, Hyunsoo

2011-08-01

The effective barrier height and carrier transport mechanism of low resistance Ag-based contact to highly Mg-doped p-GaN were investigated. The specific contact resistance obtained was as low as 7.0×10-4 Ω cm2. The electrical resistivity of p-GaN was found to increase depending on ˜T-1/4, indicating variable-range hopping (VRH) conduction through Mg-related deep-level defects. Based on the VRH conduction model, the effective barrier height for carrier transport could be measured as 0.12 eV, which is low enough to explain the formation of excellent ohmic contact. The deep-level defects were also found to induce surface Fermi pinning.

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

NASA Astrophysics Data System (ADS)

Chen, C.-H.; Tan, T. Y.

1995-10-01

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, an amphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancy V {Ga/2-} and the triply positively charged defect complex (ASGa+ V As)3+, with AsGa being the antisite defect of an As atom occupying a Ga site and V As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect system V {Ga/2-}/(AsGa+ V As)3+ is supposed to be able to pin the GaAs Fermi level at approximately the E v +0.6 eV level position, which requires that the net free energy of the V Ga/(AsGa+ V As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about the E v +1.2 eV level position instead of the needed E v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.

Hidden Fermi liquid: Self-consistent theory for the normal state of high-Tc superconductors

NASA Astrophysics Data System (ADS)

Casey, Philip A.

The anomalous "strange metal" properties of the normal, non-superconducting state of the high-Tc cuprate superconductors have been extensively studied for over two decades. The resistivity is robustly T-linear at high temperatures, while at low T it appears to maintain linearity near optimal doping and is T2 at higher doping. The inverse Hall angle is strictly T2 and hence has a distinct scattering lifetime from the resistivity. The transport scattering lifetime is highly anisotropic as directly measured by angle-dependent magnetoresistance (ADMR) and indirectly in more traditional transport experiments. The IR conductivity exhibits a non-integer power-law in frequency, which we take as a defining characteristic of the "strange metal". A phenomenological theory of the transport and spectroscopic properties at a self-consistent and predictive level has been much sought after, yet elusive. Hidden Fermi liquid theory (HFL) explicitly accounts for the effects of Gutzwiller projection in the t-J Hamiltonian, widely believed to contain the essential physics of the high-Tc superconductors. We show this theory to be the first self-consistent description for the normal state of the cuprates based on transparent, fundamental assumptions. Our well-defined formalism also serves as a guide for further experimental confirmation. Chapter 1 reviews the "strange metal" properties and the relevant aspects of competing models. Chapter 2 presents the theoretical foundations of the formalism. Chapters 3 and 4 derive expressions for the entire normal state relating many of the properties, for example: angle-resolved photoemission, IR conductivity, resistivity, Hall angle, and by generalizing the formalism to include the Fermi surface topology---ADMR. Self-consistency is demonstrated with experimental comparisons, including the most recent laser-ARPES and ADMR. Chapter 5 discusses entropy transport, as in the thermal conductivity, thermal Hall conductivity, and consequent metrics of non-Fermi liquid behavior such as the Wiedemann-Franz and Kadowaki-Woods ratios.

The rotation-vibration structure of the SO 2 C 1B 2 state explained by a new internal coordinate force field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Jun; Park, G. Barratt; Field, Robert W.

A new quartic force field for the SO 2 C ~ 1B 2 state has been derived, based on high resolution data from S 16O 2 and S 18O 2. Included are eight b 2 symmetry vibrational levels of S 16O 2 reported in the first paper of this series [G. B. Park, et al., J. Chem. Phys. 144, 144311 (2016)]. Many of the experimental observables not included in the fit, such as the Franck-Condon intensities and the Coriolis-perturbed effective C rotational constants of highly anharmonic C ~ state vibrational levels, are well reproduced using our force field. Because themore » two stretching modes of the C ~ state are strongly coupled via Fermi-133 interaction, the vibrational structure of the C state is analyzed in a Fermi-system basis set, constructed explicitly in this work via partial diagonalization of the vibrational Hamiltonian. The physical significance of the Fermi-system basis is discussed in terms of semiclassical dynamics, based on study of Fermi-resonance systems by Kellman and coworkers [M. E. Kellman and L. Xiao, J. Chem. Phys. 93, 5821 (1990)]. By diagonalizing the vibrational Hamiltonian in the Fermi-system basis, the vibrational characters of all vibrational levels can be determined unambiguously. It is shown that the bending mode cannot be treated separately from the coupled stretching modes, particularly at vibrational energies of more than 2000 cm –1. Based on our force field, the structure of the Coriolis interactions in the C ~ state of SO 2 is also discussed. As a result, we identify the origin of the alternating patterns in the effective C rotational constants of levels in the vibrational progressions of the symmetry-breaking mode, ν β (which correlates with the antisymmetric stretching mode in our assignment scheme).« less

The rotation-vibration structure of the SO 2 C 1B 2 state explained by a new internal coordinate force field

DOE PAGES

Jiang, Jun; Park, G. Barratt; Field, Robert W.

2016-04-14

A new quartic force field for the SO 2 C ~ 1B 2 state has been derived, based on high resolution data from S 16O 2 and S 18O 2. Included are eight b 2 symmetry vibrational levels of S 16O 2 reported in the first paper of this series [G. B. Park, et al., J. Chem. Phys. 144, 144311 (2016)]. Many of the experimental observables not included in the fit, such as the Franck-Condon intensities and the Coriolis-perturbed effective C rotational constants of highly anharmonic C ~ state vibrational levels, are well reproduced using our force field. Because themore » two stretching modes of the C ~ state are strongly coupled via Fermi-133 interaction, the vibrational structure of the C state is analyzed in a Fermi-system basis set, constructed explicitly in this work via partial diagonalization of the vibrational Hamiltonian. The physical significance of the Fermi-system basis is discussed in terms of semiclassical dynamics, based on study of Fermi-resonance systems by Kellman and coworkers [M. E. Kellman and L. Xiao, J. Chem. Phys. 93, 5821 (1990)]. By diagonalizing the vibrational Hamiltonian in the Fermi-system basis, the vibrational characters of all vibrational levels can be determined unambiguously. It is shown that the bending mode cannot be treated separately from the coupled stretching modes, particularly at vibrational energies of more than 2000 cm –1. Based on our force field, the structure of the Coriolis interactions in the C ~ state of SO 2 is also discussed. As a result, we identify the origin of the alternating patterns in the effective C rotational constants of levels in the vibrational progressions of the symmetry-breaking mode, ν β (which correlates with the antisymmetric stretching mode in our assignment scheme).« less

Interpretation of diffusion coefficients in nanostructured materials from random walk numerical simulation.

PubMed

Anta, Juan A; Mora-Seró, Iván; Dittrich, Thomas; Bisquert, Juan

2008-08-14

We make use of the numerical simulation random walk (RWNS) method to compute the "jump" diffusion coefficient of electrons in nanostructured materials via mean-square displacement. First, a summary of analytical results is given that relates the diffusion coefficient obtained from RWNS to those in the multiple-trapping (MT) and hopping models. Simulations are performed in a three-dimensional lattice of trap sites with energies distributed according to an exponential distribution and with a step-function distribution centered at the Fermi level. It is observed that once the stationary state is reached, the ensemble of particles follow Fermi-Dirac statistics with a well-defined Fermi level. In this stationary situation the diffusion coefficient obeys the theoretical predictions so that RWNS effectively reproduces the MT model. Mobilities can be also computed when an electrical bias is applied and they are observed to comply with the Einstein relation when compared with steady-state diffusion coefficients. The evolution of the system towards the stationary situation is also studied. When the diffusion coefficients are monitored along simulation time a transition from anomalous to trap-limited transport is observed. The nature of this transition is discussed in terms of the evolution of electron distribution and the Fermi level. All these results will facilitate the use of RW simulation and related methods to interpret steady-state as well as transient experimental techniques.

Non-Fermi-liquid to Fermi-liquid transports in iron-pnictide Ba(Fe1-x Co x )2As2 and the electronic correlation strength in superconductors newly probed by the normal-state Hall angle

NASA Astrophysics Data System (ADS)

Wang, L. M.; Wang, Chih-Yi; Zen, Sha-Min; Chang, Jin-Yuan; Kuo, C. N.; Lue, C. S.; Chang, L. J.; Su, Y.; Wolf, Th; Adelmann, P.

2017-03-01

Electrical transports in iron-pnictide Ba(Fe1-x Co x )2As2 (BFCA) single crystals are heavily debated in terms of the hidden Fermi-liquid (HFL) and holographic theories. Both HFL and holographic theories provide consistent physic pictures and propose a universal expression of resistivity to describe the crossover of transports from the non-Fermi-liquid (FL) to FL behavior in these so-called ‘strange metal’ systems. The deduced spin exchange energy J and model-dependent energy scale W in BFCA are almost the same, or are of the same order of several hundred Kelvin for over-doped BFCA, which is in agreement with the HFL theory. Moreover, a drawn line of W/3.5 for BFCA in the higher-doping region up to the right demonstrates the crossover from non-FL-like behavior to FL-like behavior at high doping, and shows a new phase diagram of BFCA. The electronic correlation strength in superconductors has been newly probed by the normal-state Hall angle, which found that, for the first time, correlation strength can be characterized by the ratios of T c to the Fermi temperature T F, J/T F, and the transverse mass to longitudinal mass.

Constructing the AdS dual of a Fermi liquid: AdS black holes with Dirac hair

NASA Astrophysics Data System (ADS)

Čubrović, Mihailo; Zaanen, Jan; Schalm, Koenraad

2011-10-01

We provide evidence that the holographic dual to a strongly coupled charged Fermi liquid has a non-zero fermion density in the bulk. We show that the pole-strength of the stable quasiparticle characterizing the Fermi surface is encoded in the AdS probability density of a single normalizable fermion wavefunction in AdS. Recalling Migdal's theorem which relates the pole strength to the Fermi-Dirac characteristic discontinuity in the number density at ω F , we conclude that the AdS dual of a Fermi liquid is described by occupied on-shell fermionic modes in AdS. Encoding the occupied levels in the total spatially averaged probability density of the fermion field directly, we show that an AdS Reissner-Nordström black holein a theory with charged fermions has a critical temperature, at which the system undergoes a first-order transition to a black hole with a non-vanishing profile for the bulk fermion field. Thermodynamics and spectral analysis support that the solution with non-zero AdS fermion-profile is the preferred ground state at low temperatures.

Landau levels and SdH-oscillations of the quasi two-dimensional electron gas at grain boundaries and near heterojunctions

NASA Astrophysics Data System (ADS)

Paasch, G.; Gobsch, G.; Schulze, D.; Handschack, S.

1989-04-01

For the quasi two-dimensional (Q2D) electron gas important experimental information is obtained from magnetotransport measurements with a perpendicular magnetic field. The energy spectrum consists of series of Landau levels for each electric subband. There still exist several open questions if two or more electric Subbands are populated. Results are presented here for this situation. The usual procedure for interpreting Shubnikov-de Haas (SdH) measurements for the case of several populated subbands is analyzed (connection with the saw-tooth like Fermi energy as a function of the magnetic field). The transverse magnetoresistance is calculated for the Q2D electron gas in InSb-bicrystals and at InGaAs-InP heterojunctions. All details of the experimental curves can be explained including an anomalous behaviour of the quantum Hall effect (QHE) in the second system. Basic assumptions of the theory are the broadening of the Landau levels and in addition a background of localized states in the second case. The dependence of the electronic structure on the perpendicular magnetic field is discussed qualitatively. First results of magnetic field dependent self-consistent calculations for inversion layers are presented. It is shown for the first time that this magnetic field dependence causes qualitative changes of the Landau level spectrum.

Anisotropies in the diffuse gamma-ray background measured by the Fermi LAT

DOE PAGES

Ackermann, M.; Ajello, M.; Albert, A.; ...

2012-04-23

The contribution of unresolved sources to the diffuse gamma-ray background could induce anisotropies in this emission on small angular scales. Here, we analyze the angular power spectrum of the diffuse emission measured by the Fermi Large Area Telescope at Galactic latitudes | b | > 30 ° in four energy bins spanning 1–50 GeV. At multipoles ℓ ≥ 155 , corresponding to angular scales ≲ 2 ° , angular power above the photon noise level is detected at > 99.99 % confidence level in the 1–2 GeV, 2–5 GeV, and 5–10 GeV energy bins, and at > 99 % confidencemore » level at 10–50 GeV. Within each energy bin the measured angular power takes approximately the same value at all multipoles ℓ ≥ 155 , suggesting that it originates from the contribution of one or more unclustered source populations. Furthermore, the amplitude of the angular power normalized to the mean intensity in each energy bin is consistent with a constant value at all energies, C P / < I > 2 = 9.05 ± 0.84 × 10 - 6 sr , while the energy dependence of C P is consistent with the anisotropy arising from one or more source populations with power-law photon spectra with spectral index Γ s = 2.40 ± 0.07 . We also discuss the implications of the measured angular power for gamma-ray source populations that may provide a contribution to the diffuse gamma-ray background.« less

Search for extended γ-ray emission around AGN with H.E.S.S. and Fermi-LAT

NASA Astrophysics Data System (ADS)

H. E. S. S. Collaboration; Abramowski, A.; Aharonian, F.; Ait Benkhali, F.; Akhperjanian, A. G.; Angüner, E.; Anton, G.; Backes, M.; Balenderan, S.; Balzer, A.; Barnacka, A.; Becherini, Y.; Becker Tjus, J.; Bernlöhr, K.; Birsin, E.; Bissaldi, E.; Biteau, J.; Böttcher, M.; Boisson, C.; Bolmont, J.; Bordas, P.; Brucker, J.; Brun, F.; Brun, P.; Bulik, T.; Carrigan, S.; Casanova, S.; Chadwick, P. M.; Chalme-Calvet, R.; Chaves, R. C. G.; Cheesebrough, A.; Chrétien, M.; Colafrancesco, S.; Cologna, G.; Conrad, J.; Couturier, C.; Cui, Y.; Dalton, M.; Daniel, M. K.; Davids, I. D.; Degrange, B.; Deil, C.; deWilt, P.; Dickinson, H. J.; Djannati-Atäı, A.; Domainko, W.; Drury, L. O'C.; Dubus, G.; Dutson, K.; Dyks, J.; Dyrda, M.; Edwards, T.; Egberts, K.; Eger, P.; Espigat, P.; Farnier, C.; Fegan, S.; Feinstein, F.; Fernandes, M. V.; Fernandez, D.; Fiasson, A.; Fontaine, G.; Förster, A.; Füßling, M.; Gajdus, M.; Gallant, Y. A.; Garrigoux, T.; Giavitto, G.; Giebels, B.; Glicenstein, J. F.; Grondin, M.-H.; Grudzińska, M.; Häffner, S.; Hahn, J.; Harris, J.; Heinzelmann, G.; Henri, G.; Hermann, G.; Hervet, O.; Hillert, A.; Hinton, J. A.; Hofmann, W.; Hofverberg, P.; Holler, M.; Horns, D.; Jacholkowska, A.; Jahn, C.; Jamrozy, M.; Janiak, M.; Jankowsky, F.; Jung, I.; Kastendieck, M. A.; Katarzyński, K.; Katz, U.; Kaufmann, S.; Khélifi, B.; Kieffer, M.; Klepser, S.; Klochkov, D.; Kluźniak, W.; Kneiske, T.; Kolitzus, D.; Komin, Nu.; Kosack, K.; Krakau, S.; Krayzel, F.; Krüger, P. P.; Laffon, H.; Lamanna, G.; Lefaucheur, J.; Lemie`re, A.; Lemoine-Goumard, M.; Lenain, J.-P.; Lohse, T.; Lopatin, A.; Lu, C.-C.; Marandon, V.; Marcowith, A.; Marx, R.; Maurin, G.; Maxted, N.; Mayer, M.; McComb, T. J. L.; Méhault, J.; Meintjes, P. J.; Menzler, U.; Meyer, M.; Moderski, R.; Mohamed, M.; Moulin, E.; Murach, T.; Naumann, C. L.; de Naurois, M.; Niemiec, J.; Nolan, S. J.; Oakes, L.; Odaka, H.; Ohm, S.; de Oña Wilhelmi, E.; Opitz, B.; Ostrowski, M.; Oya, I.; Panter, M.; Parsons, R. D.; Paz Arribas, M.; Pekeur, N. W.; Pelletier, G.; Perez, J.; Petrucci, P.-O.; Peyaud, B.; Pita, S.; Poon, H.; Pühlhofer, G.; Punch, M.; Quirrenbach, A.; Raab, S.; Raue, M.; Reichardt, I.; Reimer, A.; Reimer, O.; Renaud, M.; de los Reyes, R.; Rieger, F.; Rob, L.; Romoli, C.; Rosier-Lees, S.; Rowell, G.; Rudak, B.; Rulten, C. B.; Sahakian, V.; Sanchez, D. A.; Santangelo, A.; Schlickeiser, R.; Schüssler, F.; Schulz, A.; Schwanke, U.; Schwarzburg, S.; Schwemmer, S.; Sol, H.; Spengler, G.; Spies, F.; Stawarz, Ł.; Steenkamp, R.; Stegmann, C.; Stinzing, F.; Stycz, K.; Sushch, I.; Tavernet, J.-P.; Tavernier, T.; Taylor, A. M.; Terrier, R.; Tluczykont, M.; Trichard, C.; Valerius, K.; van Eldik, C.; van Soelen, B.; Vasileiadis, G.; Venter, C.; Viana, A.; Vincent, P.; Völk, H. J.; Volpe, F.; Vorster, M.; Vuillaume, T.; Wagner, S. J.; Wagner, P.; Wagner, R. M.; Ward, M.; Weidinger, M.; Weitzel, Q.; White, R.; Wierzcholska, A.; Willmann, P.; Wörnlein, A.; Wouters, D.; Yang, R.; Zabalza, V.; Zacharias, M.; Zdziarski, A. A.; Zech, A.; Zechlin, H.-S.; Malyshev, D.

2014-02-01

Context. Very-high-energy (VHE; E > 100 GeV) γ-ray emission from blazars inevitably gives rise to electron-positron pair production through the interaction of these γ-rays with the extragalactic background light (EBL). Depending on the magnetic fields in the proximity of the source, the cascade initiated from pair production can result in either an isotropic halo around an initially beamed source or a magnetically broadened cascade flux. Aims: Both extended pair-halo (PH) and magnetically broadened cascade (MBC) emission from regions surrounding the blazars 1ES 1101-232, 1ES 0229+200, and PKS 2155-304 were searched for using VHE γ-ray data taken with the High Energy Stereoscopic System (H.E.S.S.) and high-energy (HE; 100 MeV < E < 100 GeV) γ-ray data with the Fermi Large Area Telescope (LAT). Methods: By comparing the angular distributions of the reconstructed γ-ray events to the angular profiles calculated from detailed theoretical models, the presence of PH and MBC was investigated. Results: Upper limits on the extended emission around 1ES 1101-232, 1ES 0229+200, and PKS 2155-304 are found to be at a level of a few per cent of the Crab nebula flux above 1 TeV, depending on the assumed photon index of the cascade emission. Assuming strong extra-Galactic magnetic field (EGMF) values, >10-12 G, this limits the production of pair haloes developing from electromagnetic cascades. For weaker magnetic fields, in which electromagnetic cascades would result in MBCs, EGMF strengths in the range (0.3-3)× 10-15 G were excluded for PKS 2155-304 at the 99% confidence level, under the assumption of a 1 Mpc coherence length.

DFT calculations of strain and interface effects on electronic structures and magnetic properties of L10-FePt/Ag heterojunction of GMR applications

NASA Astrophysics Data System (ADS)

Pramchu, Sittichain; Jaroenjittichai, Atchara Punya; Laosiritaworn, Yongyut

2018-03-01

In this work, density functional theory (DFT) was employed to investigate the effect of strain and interface on electronic structures and magnetic properties of L10-FePt/Ag heterojunction. Two possible interface structures of L10-FePt(001)/Ag(001), that is, interface between Fe and Ag layers (Fe/Ag) and between Pt and Ag layers (Pt/Ag), were inspected. It was found that Pt/Ag interface is more stable than Fe/Ag interface due to its lower formation energy. Further, under the lattice mismatch induced tensile strain, the enhancement of magnetism for both Fe/Ag and Pt/Ag interface structures has been found to have progressed, though the magnetic moments of "interfacial" Fe and Pt atoms have been found to have decreased. To explain this further, the local density of states (LDOS) analysis suggests that interaction between Fe (Pt) and Ag near Fe/Ag (Pt/Ag) interface leads to spin symmetry breaking of the Ag atom and hence induces magnetism magnitude. In contrast, the magnetic moments of interfacial Fe and Pt atoms reduce because of the increase in the electronic states near the Fermi level of the minority-spin electrons. In addition, the significant enhancements of the LDOS near the Fermi levels of the minority-spin electrons signify the boosting of the transport properties of the minority-spin electrons and hence the spin-dependent electron transport at this ferromagnet/metal interface. From this work, it is expected that this clarification of the interfacial magnetism may inspire new innovation on how to improve spin-dependent electron transport for enhancing the giant magnetoresistance (GMR) ratio of potential GMR-based spintronic devices.

First-principles study of electronic structure and Fermi surface in semimetallic YAs

DOE PAGES

Swatek, Przemys?aw Wojciech

2018-03-23

In the course of searching for new systems, which exhibit nonsaturating and extremely large positive magnetoresistance, electronic structure, Fermi surface, and de Haas-van Alphen characteristics of the semimetallic YAs compound were studied using the all-electron full-potential linearized augmented-plane wave (FP–LAPW) approach in the framework of the generalized gradient approximation (GGA). In the scalar-relativistic calculation, the cubic symmetry splits fivefold degenerate Y- d orbital into low-energy threefold-degenerate and twofold degenerate doublet states at point around the Fermi energy. Furthermore one of them, together with the threefold degenerate character of As-p orbital, render the YAs semimetal with a topologically trivial band ordermore » and fairly low density of states at the Fermi level. Including spin–orbit (SO) coupling into the calculation leads to pronounced splitting of the state and shifting the bands in the energy scale. Consequently, the determined four different 3-dimensional Fermi surface sheets of YAs consists of three concentric hole-like bands at and one ellipsoidal electron-like sheet centred at the X points. In full accordance with the previous first-principles calculations for isostructural YSb and YBi, the calculated Fermi surface of YAs originates from fairly compensated multi-band electronic structures.« less

First-principles study of electronic structure and Fermi surface in semimetallic YAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swatek, Przemys?aw Wojciech

In the course of searching for new systems, which exhibit nonsaturating and extremely large positive magnetoresistance, electronic structure, Fermi surface, and de Haas-van Alphen characteristics of the semimetallic YAs compound were studied using the all-electron full-potential linearized augmented-plane wave (FP–LAPW) approach in the framework of the generalized gradient approximation (GGA). In the scalar-relativistic calculation, the cubic symmetry splits fivefold degenerate Y- d orbital into low-energy threefold-degenerate and twofold degenerate doublet states at point around the Fermi energy. Furthermore one of them, together with the threefold degenerate character of As-p orbital, render the YAs semimetal with a topologically trivial band ordermore » and fairly low density of states at the Fermi level. Including spin–orbit (SO) coupling into the calculation leads to pronounced splitting of the state and shifting the bands in the energy scale. Consequently, the determined four different 3-dimensional Fermi surface sheets of YAs consists of three concentric hole-like bands at and one ellipsoidal electron-like sheet centred at the X points. In full accordance with the previous first-principles calculations for isostructural YSb and YBi, the calculated Fermi surface of YAs originates from fairly compensated multi-band electronic structures.« less

Electronic structures of Plutonium compounds with the NaCl-type monochalcogenides structure

NASA Astrophysics Data System (ADS)

Maehira, Takahiro; Tatetsu, Yasutomi

2012-12-01

We calculate the energy band structure and the Fermi surface of PuS, PuSe and PuTe by using a self-consistent relativistic linear augmented-plane-wave method with the exchange and correlation potential in a local density approximation. It is found in common that the energy bands in the vicinity of the Fermi level are mainly due to the hybridization between Pu 5/ and monochalcogenide p electrons. The obtained main Fermi surfaces are composed of two hole sheets and one electron sheet, all of which are constructed from the band having the Pu 5/ state and the monochalcogenide p state.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Tikhov, S. V.; Gorshkov, O. N.

It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.

Renormalization of Coulomb interactions in a system of two-dimensional tilted Dirac fermions

NASA Astrophysics Data System (ADS)

Lee, Yu-Wen; Lee, Yu-Li

2018-01-01

We investigate the effects of long-ranged Coulomb interactions in a tilted Dirac semimetal in two dimensions by using the perturbative renormalization-group (RG) method. Depending on the magnitude of the tilting parameter, the undoped system can have either Fermi points (type I) or Fermi lines (type II). Previous studies usually performed the renormalization-group transformations by integrating out the modes with large momenta. This is problematic when the Fermi surface is open, like type-II Dirac fermions. In this work we study the effects of Coulomb interactions, following the spirit of Shankar [Rev. Mod. Phys. 66, 129 (1994), 10.1103/RevModPhys.66.129], by introducing a cutoff in the energy scale around the Fermi surface and integrating out the high-energy modes. For type-I Dirac fermions, our result is consistent with that of the previous work. On the other hand, we find that for type-II Dirac fermions, the magnitude of the tilting parameter increases monotonically with lowering energies. This implies the stability of type-II Dirac fermions in the presence of Coulomb interactions, in contrast with previous results. Furthermore, for type-II Dirac fermions, the velocities in different directions acquire different renormalization even if they have the same bare values. By taking into account the renormalization of the tilting parameter and the velocities due to the Coulomb interactions, we show that while the presence of a charged impurity leads only to charge redistribution around the impurity for type-I Dirac fermions, for type-II Dirac fermions, the impurity charge is completely screened, albeit with a very long screening length. The latter indicates that the temperature dependence of physical observables are essentially determined by the RG equations we derived. We illustrate this by calculating the temperature dependence of the compressibility and specific heat of the interacting tilted Dirac fermions.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

PubMed

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Three-component fermions with surface Fermi arcs in tungsten carbide

NASA Astrophysics Data System (ADS)

Ma, J.-Z.; He, J.-B.; Xu, Y.-F.; Lv, B. Q.; Chen, D.; Zhu, W.-L.; Zhang, S.; Kong, L.-Y.; Gao, X.; Rong, L.-Y.; Huang, Y.-B.; Richard, P.; Xi, C.-Y.; Choi, E. S.; Shao, Y.; Wang, Y.-L.; Gao, H.-J.; Dai, X.; Fang, C.; Weng, H.-M.; Chen, G.-F.; Qian, T.; Ding, H.

2018-04-01

Topological Dirac and Weyl semimetals not only host quasiparticles analogous to the elementary fermionic particles in high-energy physics, but also have a non-trivial band topology manifested by gapless surface states, which induce exotic surface Fermi arcs1,2. Recent advances suggest new types of topological semimetal, in which spatial symmetries protect gapless electronic excitations without high-energy analogues3-11. Here, using angle-resolved photoemission spectroscopy, we observe triply degenerate nodal points near the Fermi level of tungsten carbide with space group P 6 ¯m 2 (no. 187), in which the low-energy quasiparticles are described as three-component fermions distinct from Dirac and Weyl fermions. We further observe topological surface states, whose constant-energy contours constitute pairs of `Fermi arcs' connecting to the surface projections of the triply degenerate nodal points, proving the non-trivial topology of the newly identified semimetal state.

Absence of photoemission from the Fermi level in potassium intercalated picene and coronene films: structure, polaron, or correlation physics?

PubMed

Mahns, Benjamin; Roth, Friedrich; Knupfer, Martin

2012-04-07

The electronic structure of potassium intercalated picene and coronene films has been studied using photoemission spectroscopy. Picene has additionally been intercalated using sodium. Upon alkali metal addition core level as well as valence band photoemission data signal a filling of previously unoccupied states of the two molecular materials due to charge transfer from potassium. In contrast to the observation of superconductivity in K(x)picene and K(x)coronene (x ~ 3), none of the films studied shows emission from the Fermi level, i.e., we find no indication for a metallic ground state. Several reasons for this observation are discussed.

Specific heat and effects of strong pairing fluctuations in a superfluid Fermi atom gas in the BCS-BEC crossover region

NASA Astrophysics Data System (ADS)

van Wyk, Pieter; Inotani, Daisuke; Ohashi, Yoji

2018-03-01

We theoretically investigate the specific heat at constant volume C V in the BCS(Bardeen-Cooper-Schrieffer)-BEC(Bose-Einstein-condensation)-crossover regime of an ultracold Fermi gas, below the superfluid phase transition temperature T c. Within the strong-coupling framework developed by Nozières and Schmitt-Rink, we show that the temperature dependence of C V drastically changes as one passes through the crossover region, and is sensitive to strong fluctuations in the Cooper channel near the unitarity limit. We also compare our results to a recent experiment on a 6Li unitary Fermi gas. Since fluctuation effects are a crucial key in the BCS-BEC-crossover phenomenon, our results would be helpful in considering how the fermionic BCS superfluid changes into BEC with increasing the interaction strength, from the viewpoint of specific heat.

Stokes paradox in electronic Fermi liquids

NASA Astrophysics Data System (ADS)

Lucas, Andrew

2017-03-01

The Stokes paradox is the statement that in a viscous two-dimensional fluid, the "linear response" problem of fluid flow around an obstacle is ill posed. We present a simple consequence of this paradox in the hydrodynamic regime of a Fermi liquid of electrons in two-dimensional metals. Using hydrodynamics and kinetic theory, we estimate the contribution of a single cylindrical obstacle to the global electrical resistance of a material, within linear response. Momentum relaxation, present in any realistic electron liquid, resolves the classical paradox. Nonetheless, this paradox imprints itself in the resistance, which can be parametrically larger than predicted by Ohmic transport theory. We find a remarkably rich set of behaviors, depending on whether or not the quasiparticle dynamics in the Fermi liquid should be treated as diffusive, hydrodynamic, or ballistic on the length scale of the obstacle. We argue that all three types of behavior are observable in present day experiments.

Pairing matrix elements and pairing gaps with bare, effective, and induced interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barranco, F.; Bortignon, P.F.; Colo, G.

2005-11-01

The dependence on the single-particle states of the pairing matrix elements of the Gogny force and of the bare low-momentum nucleon-nucleon potential v{sub low-k}--designed so as to reproduce the low-energy observables avoiding the use of a repulsive core--is studied for a typical finite, superfluid nucleus ({sup 120}Sn). It is found that the matrix elements of v{sub low-k} follow closely those of v{sub Gogny} on a wide range of energy values around the Fermi energy e{sub F}, those associated with v{sub low-k} being less attractive. This result explains the fact that around e{sub F} the pairing gap {delta}{sub Gogny} associated withmore » the Gogny interaction (and with a density of single-particle levels corresponding to an effective k mass m{sub k}{approx_equal}0.7 m) is a factor of about 2 larger than {delta}{sub low-k}, being in agreement with {delta}{sub exp}=1.4 MeV. The exchange of low-lying collective surface vibrations among pairs of nucleons moving in time-reversal states gives rise to an induced pairing interaction v{sub ind} peaked at e{sub F}. The interaction (v{sub low-k}+v{sub ind}) Z{sub {omega}} arising from the renormalization of the bare nucleon-nucleon potential and of the single-particle motion ({omega}-mass and quasiparticle strength Z{sub {omega}}) associated with the particle-vibration coupling mechanism, leads to a value of the pairing gap at the Fermi energy {delta}{sub ren} that accounts for the experimental value. An important question that remains to be studied quantitatively is to what extent {delta}{sub Gogny}, which depends on average parameters, and {delta}{sub ren}, which explicitly depends on the parameters describing the (low-energy) nuclear structure, display or not a similar isotopic dependence and whether this dependence is borne out by the data.« less

Fermiology of Ce2 Rh3 Ge5

NASA Astrophysics Data System (ADS)

Wartenbe, Mark

The competition between localized and delocalized f electrons in heavy fermion materials produces a wide variety of interesting physical phenomena. Among these compounds is Ce2Rh3Ge5. This heavy-fermion system undergoes an antiferromagnetic transition below 4K and exhibits an angle dependent magnetic phase transition around 25 tesla. In addition, RF conductivity measurements in pulsed field (65T) have revealed quantum oscillations. Temperature dependence at fixed angle indicates relatively heavy effective masses of values ranging from ~3me on up to ~10me. This indicates that the narrow f-electron density of states is partially hybridized close to the Fermi energy, but also places strict cryogenic constraints upon the measurement (3Helium temperatures are required). Fermi surface calculations have produced complex figures which lend validation to such rich behavior. Presented are updated measurements including magnetization and revised theoretical calculations..

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

NASA Astrophysics Data System (ADS)

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

2018-04-01

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three-dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb2 Pt2 Pb , a metal where itinerant electrons coexist with localized moments of Yb ions which can be described in terms of effective S =1 /2 spins with a dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the two interacting subsystems. We characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasilinear temperature dependence.

Microscopic theoretical study of frequency dependent dielectric constant of heavy fermion systems

NASA Astrophysics Data System (ADS)

Shadangi, Keshab Chandra; Rout, G. C.

2017-05-01

The dielectric polarization and the dielectric constant plays a vital role in the deciding the properties of the Heavy Fermion Systems. In the present communication we consider the periodic Anderson's Model which consists of conduction electron kinetic energy, localized f-electron kinetic energy and the hybridization between the conduction and localized electrons, besides the Coulomb correlation energy. We calculate dielectric polarization which involves two particle Green's functions which are calculated by using Zubarev's Green's function technique. Using the equations of motion of the fermion electron operators. Finally, the temperature and frequency dependent dielectric constant is calculated from the dielectric polarization function. The charge susceptibility and dielectric constant are computed numerically for different physical parameters like the position (Ef) of the f-electron level with respect to fermi level, the strength of the hybridization (V) between the conduction and localized f-electrons, Coulomb correlation potential temperature and optical phonon wave vector (q). The results will be discussed in a reference to the experimental observations of the dielectric constants.

Optical Asymmetry and Nonlinear Light Scattering from Colloidal Gold Nanorods.

PubMed

Lien, Miao-Bin; Kim, Ji-Young; Han, Myung-Geun; Chang, You-Chia; Chang, Yu-Chung; Ferguson, Heather J; Zhu, Yimei; Herzing, Andrew A; Schotland, John C; Kotov, Nicholas A; Norris, Theodore B

2017-06-27

A systematic study is presented of the intensity-dependent nonlinear light scattering spectra of gold nanorods under resonant excitation of the longitudinal surface plasmon resonance (SPR). The spectra exhibit features due to coherent second and third harmonic generation as well as a broadband feature that has been previously attributed to multiphoton photoluminescence arising primarily from interband optical transitions in the gold. A detailed study of the spectral dependence of the scaling of the scattered light with excitation intensity shows unexpected scaling behavior of the coherent signals, which is quantitatively accounted for by optically induced damping of the SPR mode through a Fermi liquid model of the electronic scattering. The broadband feature is shown to arise not from luminescence, but from scattering of the second-order longitudinal SPR mode with the electron gas, where efficient excitation of the second order mode arises from an optical asymmetry of the nanorod. The electronic-temperature-dependent plasmon damping and the Fermi-Dirac distribution together determine the intensity dependence of the broadband emission, and the structure-dependent absorption spectrum determines the spectral shape through the fluctuation-dissipation theorem. Hence a complete self-consistent picture of both coherent and incoherent light scattering is obtained with a single set of physical parameters.

Study of the model of hole superconductivity in multiple band cases and its application to transition metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, X.Q.

1992-01-01

The authors have studied a simple model consisting of a chain of atoms with two atoms per unit cell. This model develops two bands when the inter-cell and intra-cell hopping amplitudes are different. They have found that superconductivity predominantly occurs when the Fermi level is close to the top of the upper band where the wavefunction has antibonding feature both inside the unit cell and between unit cells. Superconductivity occurs only in a restricted parameter range when the Fermi level is close to the top of the lower band because of the repulsive interaction within the unit cell. They findmore » that pair expectation values that 'mix' carriers of both bands can exist when interband interactions other than V12 of Suhl et al are present. But the magnitude of the 'mixed pairs' order parameters is much smaller than that of the intra-band pairs. The V12 of Suhl et al is the most important interband interaction that gives rise to the main features of a two-band model: a single transition temperature and two different gaps. They have used the model of hole superconductivity to study the variation of T(sub c) among transition metal series--the Matthias rules. They have found that the observed T(sub c)'s are consistent with superconductivity of a metal with multiple bands at the Fermi level being caused by the single band with strongest antibonding character at the Fermi level. When the Fermi level is the lower part of a band, there is no T(sub c). As the band is gradually filled, T(sub c) rises, passes through a maximum, then drops to zero when the band is full. This characteristic feature is independent of any fine structure of the band. The position of the peak and the width of the peak are correlated. Quantitative agreement with the experimental results is obtained by choosing parameters of onsite Coulomb interaction U, modulated hopping term Delta-t, and nearest neighbor repulsion V to fit the magnitude of T(sub c) and the positions of experimental peaks.« less

Detection of a Fermi-level crossing in Si(557)-Au with inverse photoemission

NASA Astrophysics Data System (ADS)

Lipton-Duffin, J. A.; MacLeod, J. M.; McLean, A. B.

2006-06-01

The unoccupied energy bands of the quasi-one-dimensional (1D) Si(557)-Au system have been studied with momentum-resolved inverse photoemission. A band is found that lies (0.4±0.4)eV above the Fermi level at the center of the surface Brillouin zone (Γ¯) . It disperses to higher binding energy, along the Γ Kmacr direction, and crosses the Fermi level at k‖=0.5±0.1Å-1 . The corresponding direction in real space is parallel to both the rows of silicon adatoms and the rows of embedded gold atoms that are distinctive features of this surface reconstruction. The location of the crossing is in good agreement with previously published photoemission data [Altmann , Phys. Rev. B 64, 035406 (2001); Ahn , Phys. Rev. Lett. 91, 196403 (2003)], where two closely spaced bands were found to disperse from the Kmacr zone boundary to lower binding energy and then cross the Fermi level. In addition to the band mentioned above, a band was found that has parabolic dispersion along Γ Kmacr , the direction that is parallel to the rows of embedded gold atoms. The band minimum for the parabolic band lies (0.8±0.4)eV below the vacuum level and it has an effective mass m*=(1.0±0.1)me , where me is the free electron mass. Perpendicular to the rows of gold atoms, as expected for a state with quasi-1D symmetry, it has flat dispersion. This band may be an image state resonance, overlapping the silicon conduction band continuum, and it is spatially localized to the edge of the silicon terraces.

Energy and contact of the one-dimensional Fermi polaron at zero and finite temperature.

PubMed

Doggen, E V H; Kinnunen, J J

2013-07-12

We use the T-matrix approach for studying highly polarized homogeneous Fermi gases in one dimension with repulsive or attractive contact interactions. Using this approach, we compute ground state energies and values for the contact parameter that show excellent agreement with exact and other numerical methods at zero temperature, even in the strongly interacting regime. Furthermore, we derive an exact expression for the value of the contact parameter in one dimension at zero temperature. The model is then extended and used for studying the temperature dependence of ground state energies and the contact parameter.

Periodic box Fermi hypernetted chain calculations of neutron star crustal matter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bassan, Nicola; Fantoni, Stefano; Schmidt, Kevin E.

2011-09-15

Neutron star crustal matter, whose properties are relevant in many models aimed at explaining observed astrophysical phenomena, has so far always been studied using a mean-field approach. To check the results obtained in this way, a sensible next step is to make use of a realistic nuclear potential. The present paper extends the periodic box Fermi hypernetted chain method to include longitudinal-isospin dependence of the correlations, making feasible a study of asymmetric crustal matter. Results are presented for the symmetry energy, the low-density neutron star equation of state, and the single-particle neutron and proton energies.

Enhanced piezoelectric output of NiO/nanoporous GaN by suppression of internal carrier screening

NASA Astrophysics Data System (ADS)

Waseem, Aadil; Jeong, Dae Kyung; Johar, Muhammad Ali; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

2018-06-01

The efficiency of piezoelectric nanogenerators (PNGs) significantly depends on the free carrier concentration of semiconductors. In the presence of a mechanical stress, piezoelectric charges are generated at both ends of the PNG, which are rapidly screened by the free carriers. The screening effect rapidly decreases the piezoelectric output within fractions of a second. In this study, the piezoelectric outputs of bulk- and nanoporous GaN-based heterojunction PNGs are compared. GaN thin films were epitaxially grown on sapphire substrates using metal organic chemical vapor deposition. Nanoporous GaN was fabricated using electrochemical etching, depleted of free carriers owing to the surface Fermi-level pinning. A highly resistive NiO thin film was deposited on bulk- and nanoporous GaN using radio frequency magnetron sputter. The NiO/nanoporous GaN PNG (NPNG) under a periodic compressive stress of 4 MPa exhibited an output voltage and current of 0.32 V and 1.48 μA cm‑2, respectively. The output voltage and current of the NiO/thin film-GaN PNG (TPNG) were three and five times smaller than those of the NPNG, respectively. Therefore, the high-resistivity of NiO and nanoporous GaN depleted by the Fermi-level pinning are advantageous and provide a better piezoelectric performance of the NPNG, compared with that of the TPNG.

Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions.

PubMed

Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

2015-05-22

Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences (GC)NGC and (GC)1(TA)NTA (GC)3 sandwiched between two Pt electrodes. We show that at low temperature DNA sequence (GC)NGC exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence (GC)1(TA)NTA (GC)3 with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules.

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

PubMed

Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

2015-03-11

The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms.

A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Bae, Byung Seong; Jung, Myunghee; Yun, Eui-Jung

2016-06-01

We investigate the effects of high temperatures in the range of 292 - 393 K on the electrical properties of solution-processed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operated in the saturation region. The fabricated a-ZTO TFTs have a non-patterned bottom gate and top contact structure, and they use a heavily-doped Si wafer and SiO2 as a gate electrode and a gate insulator layer, respectively. In a-ZTO TFTs, the trap release energy ( E TR ) was deduced by using Maxwell-Boltzmann statistics. The decreasing E TR toward zero with increasing gate voltage (the density of trap states ( n s )) in the a-ZTO active layer can be attributed to a shift of the Fermi level toward the mobility edge with increasing gate voltage. The TFTs with low gate voltage (low n s ) exhibit multiple trap and release characteristics and show thermally-activated behavior. In TFTs with a high gate voltage (high n s ), however, we observe decreasing mobility and conductivity with increasing temperature at temperatures ranging from 303 to 363 K. This confirms that the E TR can drop to zero, indicating a shift of the Fermi level beyond the mobility edge. Hence, the mobility edge is detected at the cusp between thermally-activated transport and band transport.

Dependence of Ion Transport on the Electronegativity of the Constituting Atoms in Ionic Crystals.

PubMed

Zhang, Qian; Kaghazchi, Payam

2017-04-19

Ion transport in electrode and electrolyte materials is a key process in Li-based batteries. In this work, we study the mechanism and activation energy of ion transport (Ea ) in rock-salt Li-based LiX (X=Cl, Br, and I) materials. It is found that Ea at low external voltages, where Li-X Schottky pairs are the most favorable defect types, is about 0.42 times the Gibbs energy of formation of LiX compound (ΔGf ). The value of 0.42 is the slope of the electronegativity of anions of binary Li-based materials as a function of ΔGf . At high voltages, where the Fermi level is located very close to the valence band maximum (VBM), electrons can be excited from the VB to Li vacancy-induced states close to the Fermi level. Under this condition, the formation of Li vacancies that are compensated by holes is energetically more favorable than that of Li-X Schottky pairs, and therefore, the activation energies are lower in the former case. The wide range of reported experimental values of activation energies lies between calculated values at low and high voltage regimes. This work motivates further studies on the relation between the activation energy for ionic conductivity in solid materials and the intrinsic ground-state properties of their free atoms. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

COSMIC-RAY POSITRONS FROM MILLISECOND PULSARS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venter, C.; Kopp, A.; Büsching, I.

2015-07-10

Observations by the Fermi Large Area Telescope of γ-ray millisecond pulsar (MSP) light curves imply copious pair production in their magnetospheres, and not exclusively in those of younger pulsars. Such pair cascades may be a primary source of Galactic electrons and positrons, contributing to the observed enhancement in positron flux above ∼10 GeV. Fermi has also uncovered many new MSPs, impacting Galactic stellar population models. We investigate the contribution of Galactic MSPs to the flux of terrestrial cosmic-ray electrons and positrons. Our population synthesis code predicts the source properties of present-day MSPs. We simulate their pair spectra invoking an offset-dipolemore » magnetic field. We also consider positrons and electrons that have been further accelerated to energies of several TeV by strong intrabinary shocks in black widow (BW) and redback (RB) systems. Since MSPs are not surrounded by pulsar wind nebulae or supernova shells, we assume that the pairs freely escape and undergo losses only in the intergalactic medium. We compute the transported pair spectra at Earth, following their diffusion and energy loss through the Galaxy. The predicted particle flux increases for non-zero offsets of the magnetic polar caps. Pair cascades from the magnetospheres of MSPs are only modest contributors around a few tens of GeV to the lepton fluxes measured by the Alpha Magnetic Spectrometer, PAMELA, and Fermi, after which this component cuts off. The contribution by BWs and RBs may, however, reach levels of a few tens of percent at tens of TeV, depending on model parameters.« less

Partially filled Landau level at even denominators: A vortex metal with a Berry phase

NASA Astrophysics Data System (ADS)

You, Yizhi

2018-04-01

We develop a vortex metal theory for a partially filled Landau level at ν =1/2 n whose ground state contains a composite Fermi surface formed by the vortex of electrons. In the projected Landau-level limit, the composite Fermi surface contains a -π/n Berry phase. Such a fractional Berry phase is a consequence of Landau-level projection which produces the Girvin-MacDonald-Platzman [S. M. Girvin, A. H. MacDonald, and P. M. Platzman, Phys. Rev. B 33, 2481 (1986), 10.1103/PhysRevB.33.2481] guiding center algebra and embellishes an anomalous velocity to the equation of motion for the vortex metal. Further, we investigate a particle-hole symmetric bilayer system with ν1=1/2 n and ν2=1 -1/2 n at each layer, and demonstrate that the -π/n Berry phase on the composite Fermi surface leads to the suppression of 2 kf backscattering between the particle-hole partner bilayer, which could be a smoking gun to detect the fractional Berry phase. We also mention various instabilities and competing orders in such bilayer systems, including a Z4 n topological order phase driven by quantum criticality.

Decreasing the Hydroxylation Affinity of La 1–x Sr x MnO 3 Perovskites To Promote Oxygen Reduction Electrocatalysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stoerzinger, Kelsey A.; Hong, Wesley T.; Wang, Xiao Renshaw

Understanding the interaction between oxides and water is critical to design many of their functionalities, including the electrocatalysis of molecular oxygen reduction. In this study, we probed the hydroxylation of model (001)-oriented La(1-x)SrxMnO3 (LSMO) perovskite surfaces, where the electronic structure and manganese valence was controlled by five substitution levels of lanthanum with strontium, using ambient pressure X-ray photoelectron spectroscopy in a humid environment. The degree of hydroxyl formation on the oxide surface correlated with the proximity of the valence band center relative to the Fermi level. LSMO perovskites with a valence band center closer to the Fermi level were moremore » reactive toward water, forming more hydroxyl species at a given relative humidity. More hydroxyl species correlate with greater electron-donating character to the surface free energy in wetting, and reduce the activity to catalyze oxygen reduction reaction (ORR) kinetics in basic solution. New strategies to design more active catalysts should include design of electronically conducting oxides with lower valence band centers relative to the Fermi level at ORR-relevant potentials.« less

The electronic structures and work functions of (100) surface of typical binary and doped REB6 single crystals

NASA Astrophysics Data System (ADS)

Liu, Hongliang; Zhang, Xin; Xiao, Yixin; Zhang, Jiuxing

2018-03-01

The density function theory been used to calculate the electronic structures of binary and doped rare earth hexaborides (REB6), which exhibits the large density of states (DOS) near Fermi level. The d orbital elections of RE element contribute the electronic states of election emission near the Fermi level, which imply that the REB6 (RE = La, Ce, Gd) with wide distribution of high density d orbital electrons could provide a lower work function and excellent emission properties. Doping RE elements into binary REB6 can adjust DOS and the position of the Fermi energy level. The calculated work functions of considered REB6 (100) surface show that the REB6 (RE = La, Ce, Gd) have lower work function and doping RE elements with active d orbital electrons can significantly reduce work function of binary REB6. The thermionic emission test results are basically accordant with the calculated value, proving the first principles calculation could provide a good theoretical guidance for the study of electron emission properties of REB6.

Tunable graphene-based mid-infrared plasmonic multispectral and narrow band-stop filter

NASA Astrophysics Data System (ADS)

Wang, Xianjun; Meng, Hongyun; Liu, Shuai; Deng, Shuying; Jiao, Tao; Wei, Zhongchao; Wang, Faqiang; Tan, Chunhua; Huang, Xuguang

2018-04-01

In this paper, we numerically investigate the band-stop properties of single- or few-layers doped graphene ribbon arrays operating in the mid-infrared region by finite-difference time-domain method (FDTD). A perfect band-stop filter with extinction ratio (ER) ∼17 dB, 3 dB bandwidth ∼200 nm and the resonance notch located at 6.64 μm can be achieved. And desired working regions can be obtained by tuning the Fermi level (E f ) of the graphene ribbons and the geometrical parameters of the structure. Besides, by tuning the Fermi level of odd or even graphene ribbons with terminal gate voltage, we can achieve a dual-circuit switch with four states combinations of on-to-off. Furthermore, the multiple filter notches can be achieved by stacking few-layers structure, and the filter dips can be dynamically tuned to achieve the tunability and selective characteristics by tuning the Fermi-level of the graphene ribbons in the system. We believe that our proposal has the potential applications in selective filters and active plasmonic switching in the mid-infrared region.

Simulating Charge Transport in Solid Oxide Mixed Ionic and Electronic Conductors: Nernst-Planck Theory vs Modified Fick's Law

DOE PAGES

Jin, Xinfang; White, Ralph E.; Huang, Kevin

2016-10-04

With the assumption that the Fermi level (electrochemical potential of electrons) is uniform across the thickness of a mixed ionic and electronic conducting (MIEC) electrode, the charge-transport model in the electrode domain can be reduced to the modified Fick’s first law, which includes a thermodynamic factor A. A transient numerical solution of the Nernst-Planck theory was obtained for a symmetric cell with MIEC electrodes to illustrate the validity of the assumption of a uniform Fermi level. Subsequently, an impedance numerical solution based on the modified Fick’s first law is compared with that from the Nernst-Planck theory. The results show thatmore » Nernst-Planck charge-transport model is essentially the same as the modified Fick’s first law model as long as the MIEC electrodes have a predominant electronic conductivity. However, because of the invalidity of the uniform Fermi level assumption for aMIEC electrolyte with a predominant ionic conductivity, Nernst-Planck theory is needed to describe the charge transport behaviors.« less

Fermi-level tuning of the Dirac surface state in (Bi1-x Sb x )2Se3 thin films

NASA Astrophysics Data System (ADS)

Satake, Yosuke; Shiogai, Junichi; Takane, Daichi; Yamada, Keiko; Fujiwara, Kohei; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Tsukazaki, Atsushi

2018-02-01

We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-x Sb x )2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-x Sb x )2Se3 film with x  =  0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x  =  0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63  ⩽  x  ⩽  0.75. These features suggest that Fermi-level tunable (Bi1-x Sb x )2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.

Cross-Sectional Transport Imaging in a Multijunction Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haegel, Nancy M.; Ke, Chi-Wen; Taha, Hesham

2015-06-14

Combining highly localized electron-beam excitation at a point with the spatial resolution capability of optical near-field imaging, we have imaged carrier transport in a cross-sectioned multijunction (GaInP/GaInAs/Ge) solar cell. We image energy transport associated with carrier diffusion throughout the full width of the middle (GaInAs) cell and luminescent coupling from point excitation in the top cell GaInP to the middle cell. Supporting cathodoluminescence and near-field photoluminescence measurements demonstrate excitation-dependent Fermi level splitting effects that influence cross-sectioned spectroscopy results as well as transport limitations on the spatial resolution of cross-sectional measurements.

Effects of impurity adsorption on topological surface states of Bi2Te3

NASA Astrophysics Data System (ADS)

Shati, Khaqan; Arshad Farhan, M.; Selva Chandrasekaran, S.; Shim, Ji Hoon; Lee, Geunsik

2017-08-01

Electronic structures of Bi2Te3 with adsorption of Rb, In, Ga and Au atoms are studied by using the first-principle method, focusing on the effect of non-magnetic impurities on the topologically protected surface states. Upon monolayer formation, the bulk conduction band is moved down to the Fermi level with a significant Rashba splitting due to n-doping behavior with band modification details depending on the adatom chemistry. Our study shows the robustness of the intrinsic spin-momentum coupled surface band and emergence of a new similar one, which could provide helpful insight for developing novel spintronic devices.

Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films

NASA Astrophysics Data System (ADS)

Kudo, Kohei; Yamada, Shinya; Chikada, Jinichiro; Shimanuki, Yuta; Nakamura, Yoshiaki; Hamaya, Kohei

2018-04-01

We study the effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2- x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

Auger heating of carriers in {GaAs}/{AlAs} heterostructures

NASA Astrophysics Data System (ADS)

Borri, P.; Ceccherini, S.; Gurioli, M.; Bogani, F.

1997-07-01

The photoluminescence of {GaAs}/{AlAs} multiple quantum wells structures under optical ps excitation is investigated for carrier densities in the range 10 18-4 × 10 19 cm -3 with frequency and time-resolved spectroscopic techniques. The measurements give a direct evidence of the occurrence in the sample of carrier heating. This energy up-conversion gives rise to photoluminescence from the states near the Fermi level whose intensity and time evolution depend on the carrier density in a strongly non-linear way. The observed behaviour can be explained introducing in the carrier dynamics an up-conversion mechanism due to Auger-like processes.

Extremely correlated Fermi liquid theory of the t-J model in 2 dimensions: low energy properties

NASA Astrophysics Data System (ADS)

Shastry, B. Sriram; Mai, Peizhi

2018-01-01

Low energy properties of the metallic state of the two-dimensional t-J model are presented for second neighbor hopping with hole-doping (t\\prime ≤slant 0) and electron-doping (t\\prime > 0), with various superexchange energy J. We use a closed set of equations for the Greens functions obtained from the extremely correlated Fermi liquid theory. These equations reproduce the known low energies features of the large U Hubbard model in infinite dimensions. The density and temperature dependent quasiparticle weight, decay rate and the peak spectral heights over the Brillouin zone are calculated. We also calculate the resistivity, Hall conductivity, Hall number and cotangent Hall angle. The spectral features display high thermal sensitivity at modest T for density n≳ 0.8, implying a suppression of the effective Fermi-liquid temperature by two orders of magnitude relative to the bare bandwidth. The cotangent Hall angle exhibits a T 2 behavior at low T, followed by an interesting kink at higher T. The Hall number exhibits strong renormalization due to correlations. Flipping the sign of t\\prime changes the curvature of the resistivity versus T curves between convex and concave. Our results provide a natural route for understanding the observed difference in the temperature dependent resistivity of strongly correlated electron-doped and hole-doped matter.

2D massless Dirac Fermi gas model of superconductivity in the surface state of a topological insulator at high magnetic fields

NASA Astrophysics Data System (ADS)

Zhuravlev, Vladimir; Duan, Wenye; Maniv, Tsofar

2017-10-01

The Nambu-Gorkov Green's function approach is applied to strongly type-II superconductivity in a 2D spin-momentum-locked (Weyl) Fermi gas model at high perpendicular magnetic fields. The resulting phase diagram can be mapped onto that derived for the standard, parabolic band-structure model, having the same Fermi surface parameters, E F and v, but with cyclotron effective mass m\\ast=EF/2v2 . Significant deviations from the predicted mapping are found only for very small E F , when the Landau-Level filling factors are smaller than unity, and E F shrinks below the cutoff energy.

Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katahara, John K.; Hillhouse, Hugh W., E-mail: h2@uw.edu

A unified model for the direct gap absorption coefficient (band-edge and sub-bandgap) is developed that encompasses the functional forms of the Urbach, Thomas-Fermi, screened Thomas-Fermi, and Franz-Keldysh models of sub-bandgap absorption as specific cases. We combine this model of absorption with an occupation-corrected non-equilibrium Planck law for the spontaneous emission of photons to yield a model of photoluminescence (PL) with broad applicability to band-band photoluminescence from intrinsic, heavily doped, and strongly compensated semiconductors. The utility of the model is that it is amenable to full-spectrum fitting of absolute intensity PL data and yields: (1) the quasi-Fermi level splitting, (2) themore » local lattice temperature, (3) the direct bandgap, (4) the functional form of the sub-bandgap absorption, and (5) the energy broadening parameter (Urbach energy, magnitude of potential fluctuations, etc.). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se){sub 2} (CIGSSe) and Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) to reveal the nature of their tail states. For GaAs, the model fit is excellent, and fitted parameters match literature values for the bandgap (1.42 eV), functional form of the sub-bandgap states (purely Urbach in nature), and energy broadening parameter (Urbach energy of 9.4 meV). For CIGSSe and CZTSSe, the model fits yield quasi-Fermi leveling splittings that match well with the open circuit voltages measured on devices made from the same materials and bandgaps that match well with those extracted from EQE measurements on the devices. The power of the exponential decay of the absorption coefficient into the bandgap is found to be in the range of 1.2 to 1.6, suggesting that tunneling in the presence of local electrostatic potential fluctuations is a dominant factor contributing to the sub-bandgap absorption by either purely electrostatic (screened Thomas-Fermi) or a photon-assisted tunneling mechanism (Franz-Keldysh). A Gaussian distribution of bandgaps (local E{sub g} fluctuation) is found to be inconsistent with the data. The sub-bandgap absorption of the CZTSSe absorber is found to be larger than that for CIGSSe for materials that yield roughly equivalent photovoltaic devices (8% efficient). Further, it is shown that fitting only portions of the PL spectrum (e.g., low energy for energy broadening parameter and high energy for quasi-Fermi level splitting) may lead to significant errors for materials with substantial sub-bandgap absorption and emission.« less

Reduced electronic correlation effects in half substituted Ba(Fe1-xCox)2As2

NASA Astrophysics Data System (ADS)

Liu, Z.-H.; Yaresko, A. N.; Li, Y.; Evtushinsky, D. V.; Dai, P.-C.; Borisenko, S. V.

2018-06-01

We report a comprehensive study of the tridimensional nature and orbital character of the low-energy electronic structure in 50% Cobalt doped Ba(Fe1-xCox)2As2 (d6.5), by using polarization- and photon energy-dependent angle-resolved photoemission spectroscopy. An extra electron-like Fermi surface is observed around the Brillouin zone boundary compared with isoelectronic KyFe2-xSe2 (d6.5). The bands near the Fermi level (EF) are mainly derived from Fe/Co 3d t2g orbitals, revealing visible dispersions along the kz direction. In combination with the local density approximation and the dynamical mean-field theory calculations, we find that the As 4p bands are non-renormalized and the whole 3d band needs to be renormalized by a "single" factor of ˜1.6, indicating moderate electronic correlation effects. The "single" factor description of the correlation strength among the different 3d orbitals is also in sharp contrast to orbital-dependent correlation effects in BaFe2As2. Our findings indicate a remarkable reduction of correlation effects with little difference among 3d orbitals in BaFeCoAs2, due to the increased filling of the electronic 3d shell in the presence of significant Hund's coupling. The results support that the electronic correlation effects and multiple orbital physics play an important role in the superconductivity of the 122 system and in other ferropnictides.

The dependence of graphene Raman D-band on carrier density.

PubMed

Liu, Junku; Li, Qunqing; Zou, Yuan; Qian, Qingkai; Jin, Yuanhao; Li, Guanhong; Jiang, Kaili; Fan, Shoushan

2013-01-01

Raman spectroscopy has been an integral part of graphene research and can provide information about graphene structure, electronic characteristics, and electron-phonon interactions. In this study, the characteristics of the graphene Raman D-band, which vary with carrier density, are studied in detail, including the frequency, full width half-maximum, and intensity. We find the Raman D-band frequency increases for hole doping and decreases for electron doping. The Raman D-band intensity increases when the Fermi level approaches half of the excitation energy and is higher in the case of electron doping than that of hole doping. These variations can be explained by electron-phonon interaction theory and quantum interference between different Raman pathways in graphene. The intensity ratio of Raman D- and G-band, which is important for defects characterization in graphene, shows a strong dependence on carrier density.

Computational modeling of properties

NASA Technical Reports Server (NTRS)

Franz, Judy R.

1994-01-01

A simple model was developed to calculate the electronic transport parameters in disordered semiconductors in strong scattered regime. The calculation is based on a Green function solution to Kubo equation for the energy-dependent conductivity. This solution together with a rigorous calculation of the temperature-dependent chemical potential allows the determination of the dc conductivity and the thermopower. For wise-gap semiconductors with single defect bands, these transport properties are investigated as a function of defect concentration, defect energy, Fermi level, and temperature. Under certain conditions the calculated conductivity is quite similar to the measured conductivity in liquid II-VI semiconductors in that two distinct temperature regimes are found. Under different conditions the conductivity is found to decrease with temperature; this result agrees with measurements in amorphous Si. Finally the calculated thermopower can be positive or negative and may change sign with temperature or defect concentration.

Computational modeling of properties

NASA Technical Reports Server (NTRS)

Franz, Judy R.

1994-01-01

A simple model was developed to calculate the electronic transport parameters in disordered semiconductors in strong scattered regime. The calculation is based on a Green function solution to Kubo equation for the energy-dependent conductivity. This solution together with a rigorous calculation of the temperature-dependent chemical potential allows the determination of the dc conductivity and the thermopower. For wide-gap semiconductors with single defect bands, these transport properties are investigated as a function of defect concentration, defect energy, Fermi level, and temperature. Under certain conditions the calculated conductivity is quite similar to the measured conductivity in liquid 2-6 semiconductors in that two distinct temperature regimes are found. Under different conditions the conductivity is found to decrease with temperature; this result agrees with measurements in amorphous Si. Finally the calculated thermopower can be positive or negative and may change sign with temperature or defect concentration.

Electronegativity-dependent tin etching from thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de

2016-07-15

The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that,more » due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.« less

Pressure dependence of effective Coulomb interaction parameters in BaFe2As2 by first-principle calculation

NASA Astrophysics Data System (ADS)

Aghajani, M.; Hadipour, H.; Akhavan, M.

2018-05-01

Pressure dependence of the onsite Coulomb interactions of the BaFe2As2 has been studied by employing the constrained random phase approximation within first-principle calculations. Analyzing total and projected density of states, a pseudogap is found for dxy band at the energy roughly 0.25 eV higher than the Fermi level. Also, by applying pressure the spectral weight of the dxy orbital vanishes while other orbitals remain metallic. The different screening channels, as discussed in four different models, affect significantly on the Hubbard U while the Hund J remains almost unchanged. The average onsite bare and partially and fully screened Coulomb interactions increase with different rates upon compression. These different rates can be explained by competition between the electronic screening and reduction of bond lengths.

Charge-transport in tin-iodide perovskite CH3NH3SnI3: origin of high conductivity.

PubMed

Takahashi, Yukari; Obara, Rena; Lin, Zheng-Zhong; Takahashi, Yukihiro; Naito, Toshio; Inabe, Tamotsu; Ishibashi, Shoji; Terakura, Kiyoyuki

2011-05-28

The structural and electrical properties of a metal-halide cubic perovskite, CH(3)NH(3)SnI(3), have been examined. The band structure, obtained using first-principles calculation, reveals a well-defined band gap at the Fermi level. However, the temperature dependence of the single-crystal electrical conductivity shows metallic behavior down to low temperatures. The temperature dependence of the thermoelectric power is also metallic over the whole temperature range, and the large positive value indicates that charge transport occurs with a low concentration of hole carriers. The metallic properties of this as-grown crystal are thus suggested to result from spontaneous hole-doping in the crystallization process, rather than the semi-metal electronic structure. The present study shows that artificial hole doping indeed enhances the conductivity.

Temperature-dependent internal photoemission probe for band parameters

NASA Astrophysics Data System (ADS)

Lao, Yan-Feng; Perera, A. G. Unil

2012-11-01

The temperature-dependent characteristic of band offsets at the heterojunction interface was studied by an internal photoemission (IPE) method. In contrast to the traditional Fowler method independent of the temperature (T), this method takes into account carrier thermalization and carrier/dopant-induced band-renormalization and band-tailing effects, and thus measures the band-offset parameter at different temperatures. Despite intensive studies in the past few decades, the T dependence of this key band parameter is still not well understood. Re-examining a p-type doped GaAs emitter/undoped AlxGa1-xAs barrier heterojunction system disclosed its previously ignored T dependency in the valence-band offset, with a variation up to ˜-10-4 eV/K in order to accommodate the difference in the T-dependent band gaps between GaAs and AlGaAs. Through determining the Fermi energy level (Ef), IPE is able to distinguish the impurity (IB) and valence bands (VB) of extrinsic semiconductors. One important example is to determine Ef of dilute magnetic semiconductors such as GaMnAs, and to understand whether it is in the IB or VB.

An unusual metallic behavior in a Ag4SSe single crystal

NASA Astrophysics Data System (ADS)

Matteppanavar, Shidaling; Bui, Nguyen Hai An; van Smaalen, Sander; Thamizhavel, A.; Ramakrishnan, S.

2018-04-01

We report the magnetic susceptibility, resistivity and heat capacity measurements on high quality single crystalline tetra silver sulphoselenide (Ag4SSe). The magnetic susceptibility and resistivity measurements show anomalies around 260 K. The large diamagnetic drop with hysteresis at the transition implies a first order transition. Such a diamagnetic drop cannot be ascribed to the formation of charge density wave (CDW) since the temperature dependence of the resistivity shows no upturn at this transition. Infact the resistivity is decreasing with decreasing temperature, indicating a metallic behavior. However, unlike normal metals, the resistivity is almost temperature independent in the temperature range from 4-180 K. Usually, when one observes a diamagnetic transition, it is assumed to be due to a drop in the density of states at the Fermi level which leads to the decrease in the Pauli paramagnetic susceptibility. Such a decrease in the density of states often results in an increase in resistivity unless mobility of the charge carriers changes significantly. Hence, we believe that in Ag4SSe, the structural transition causes an unusual Fermi surface reconstruction which in turn leads to a strange metallic behavior at low temperatures.

Strong Rashba effect in the localized impurity states of halogen-doped monolayer PtSe2

NASA Astrophysics Data System (ADS)

Absor, Moh. Adhib Ulil; Santoso, Iman; Harsojo, Abraha, Kamsul; Kotaka, Hiroki; Ishii, Fumiyuki; Saito, Mineo

2018-05-01

The recent epitaxial growth of the 1 T phase of the PtSe2 monolayer (ML) has opened the possibility for novel applications, in particular for a spintronics device. However, in contrast to the 2 H phase of transition-metal dichalcogenides (TMDs), the absence of spin splitting in the PtSe2 ML may limit the functionality for spintronics application. Through fully relativistic density-functional theory calculations, we show that large spin splitting can be induced in the PtSe2 ML by introducing a substitutional halogen impurity. Depending on the atomic number Z of the halogen dopants, we observe an enhancement of the spin splitting in the localized impurity states (LIS), which is due to the increased contribution of the p -d orbital coupling. More importantly, we identify very large Rashba splitting in the LIS near the Fermi level around the Γ point characterized by hexagonal warping of the Fermi surface. We show that the Rashba splitting can be controlled by adjusting the doping concentration. Therefore, this work provides a possible way to induce significant Rashba splitting in the two-dimensional TMDs, which is useful for spintronic devices operating at room temperature.

Electron-phonon mediated heat flow in disordered graphene

NASA Astrophysics Data System (ADS)

Chen, Wei; Clerk, Aashish A.

2012-09-01

We calculate the heat flux and electron-phonon thermal conductance in a disordered graphene sheet, going beyond a Fermi’s golden rule approach to fully account for the modification of the electron-phonon interaction by disorder. Using the Keldysh technique combined with standard impurity averaging methods in the regime kFl≫1 (where kF is the Fermi wave vector and l is the mean free path), we consider both scalar potential (i.e., deformation potential) and vector-potential couplings between electrons and phonons. We also consider the effects of electronic screening at the Thomas-Fermi level. We find that the temperature dependence of the heat flux and thermal conductance is sensitive to the presence of disorder and screening, and reflects the underlying chiral nature of electrons in graphene and the corresponding modification of their diffusive behavior. In the case of weak screening, disorder enhances the low-temperature heat flux over the clean system (changing the associated power law from T4 to T3), and the deformation potential dominates. For strong screening, both the deformation potential and vector-potential couplings make comparable contributions, and the low-temperature heat flux obeys a T5 power law.

Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating

NASA Astrophysics Data System (ADS)

Jin, Kui; Hu, Wei; Zhu, Beiyi; Kim, Dohun; Yuan, Jie; Sun, Yujie; Xiang, Tao; Fuhrer, Michael S.; Takeuchi, Ichiro; Greene, Richard. L.

2016-05-01

The occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2-xCexCuO4 (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of -2 V to + 2 V, as well as varying the temperature and magnetic field. In the mixed state, the intrinsic anomalous Hall conductivity invokes the contribution of both electron and hole-bands as well as the energy dependent density of states near the Fermi level. The two-band model can also describe the normal state transport properties well, whereas the carrier concentrations of electrons and holes are always enhanced or depressed simultaneously in electric fields. This is in contrast to the scenario of Fermi surface reconstruction by antiferromagnetism, where an anti-correlation is commonly expected.

First-Principles Study of the Band Diagrams and Schottky-Type Barrier Heights of Aqueous Ta3N5 Interfaces.

PubMed

Watanabe, Eriko; Ushiyama, Hiroshi; Yamashita, Koichi

2017-03-22

The photo(electro)chemical production of hydrogen by water splitting is an efficient and sustainable method for the utilization of solar energy. To improve photo(electro)catalytic activity, a Schottky-type barrier is typically useful to separate excited charge carriers in semiconductor electrodes. Here, we focused on studying the band diagrams and the Schottky-type barrier heights of Ta 3 N 5 , which is one of the most promising materials as a photoanode for water splitting. The band alignments of the undoped and n-type Ta 3 N 5 with adsorbents in a vacuum were examined to determine how impurities and adsorbents affect the band positions and Fermi energies. The band edge positions as well as the density of surface states clearly depended on the density of O N impurities in the bulk and surface regions. Finally, the band diagrams of the n-type Ta 3 N 5 /water interfaces were calculated with an improved interfacial model to include the effect of electrode potential with explicit water molecules. We observed partial Fermi level pinning in our calculations at the Ta 3 N 5 /water interface, which affects the driving force for charge separation.

A tight binding model study of tunneling conductance spectra of spin and orbitally ordered CMR manganites

NASA Astrophysics Data System (ADS)

Panda, Saswati; Sahoo, D. D.; Rout, G. C.

2018-04-01

We report here a tight binding model for colossal magnetoresistive (CMR) manganites to study the pseudo gap (PG) behavior near Fermi level. In the Kubo-Ohata type DE model, we consider first and second nearest neighbor interactions for transverse spin fluctuations in core band and hopping integrals in conduction band, in the presence of static band Jahn-Teller distortion. The model Hamiltonian is solved using Zubarev's Green's function technique. The electron density of states (DOS) is found out from the Green's functions. We observe clear PG near Fermi level in the electron DOS.

Magnetic and Fermi Surface Properties of EuGa4

NASA Astrophysics Data System (ADS)

Nakamura, Ai; Hiranaka, Yuichi; Hedo, Masato; Nakama, Takao; Miura, Yasunao; Tsutsumi, Hiroki; Mori, Akinobu; Ishida, Kazuhiro; Mitamura, Katsuya; Hirose, Yusuke; Sugiyama, Kiyohiro; Honda, Fuminori; Settai, Rikio; Takeuchi, Tetsuya; Hagiwara, Masayuki; Matsuda, Tatsuma D.; Yamamoto, Etsuji; Haga, Yoshinori; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Harima, Hisatomo; Ōnuki, Yoshichika

2013-10-01

We grew a high-quality single crystal EuGa4 with the tetragonal structure by the Ga self-flux method, and measured the electrical resistivity, magnetic susceptibility, high-field magnetization, specific heat, thermoelectric power and de Haas--van Alphen (dHvA) effect, together with the electrical resistivity and thermoelectric power under pressure. EuGa4 is found to be a Eu-divalent compound without anisotropy of the magnetic susceptibility in the paramagnetic state and to reveal the same magnetization curve between H \\parallel [100] and [001] in the antiferromagnetic state, where the antiferromagnetic easy-axis is oriented along the [100] direction below a Néel temperature TN=16.5 K. The magnetization curve is discussed on the basis of a simple two-sublattice model. The Fermi surface in the paramagnetic state was clarified from the results of a dHvA experiment for EuGa4 and an energy band calculation for a non-4f reference compound SrGa4, which consists of a small ellipsoidal hole--Fermi surface and a compensated cube-like electron--Fermi surface with vacant space in center. We observed an anomaly in the temperature dependence of the electrical resistivity and thermoelectric power at TCDW=150 K under 2 GPa. This might correspond to an emergence of the charge density wave (CDW). The similar phenomenon was also observed in EuAl4 at ambient pressure. We discussed the CDW phenomenon on the basis of the present peculiar Fermi surfaces.

Lifshitz transitions and zero point lattice fluctuations in sulfur hydride showing near room temperature superconductivity

NASA Astrophysics Data System (ADS)

Bianconi, Antonio; Jarlborg, Thomas

2015-11-01

Emerets's experiments on pressurized sulfur hydride have shown that H3S metal has the highest known superconducting critical temperature Tc = 203 K. The Emerets data show pressure induced changes of the isotope coefficient between 0.25 and 0.5, in disagreement with Eliashberg theory which predicts a nearly constant isotope coefficient.We assign the pressure dependent isotope coefficient to Lifshitz transitions induced by pressure and zero point lattice fluctuations. It is known that pressure could induce changes of the topology of the Fermi surface, called Lifshitz transitions, but were neglected in previous papers on the H3S superconductivity issue. Here we propose thatH3S is a multi-gap superconductor with a first condensate in the BCS regime (located in the large Fermi surface with high Fermi energy) which coexists with second condensates in the BCS-BEC crossover regime (located on the Fermi surface spots with small Fermi energy) near the and Mpoints.We discuss the Bianconi-Perali-Valletta (BPV) superconductivity theory to understand superconductivity in H3S since the BPV theory includes the corrections of the chemical potential due to pairing and the configuration interaction between different condensates, neglected by the Eliashberg theory. These two terms in the BPV theory give the shape resonance in superconducting gaps, similar to Feshbach resonance in ultracold fermionic gases, which is known to amplify the critical temperature. Therefore this work provides some key tools useful in the search for new room temperature superconductors.

2FHL: The Second Catalog of Hard Fermi-LAT Sources

DOE PAGES

Ackermann, M.; Ajello, M.; Atwood, W. B.; ...

2016-01-14

We present a catalog of sources detected above 50 GeV by the Fermi-Large Area Telescope (LAT) in 80 months of data. The newly delivered Pass 8 event-level analysis allows the detection and characterization of sources in the 50 GeV–2TeV energy range. In this energy band, Fermi - LAT has detected 360 sources, which constitute the second catalog of hard Fermi -LAT sources (2FHL). The improved angular resolution enables the precise localization of point sources (~1.'7 radius at 68 % C. L.) and the detection and characterization of spatially extended sources. We find that 86% of the sources can be associatedmore » with counterparts at other wavelengths, of which the majority (75%) are active galactic nuclei and the rest (11%) are Galactic sources. Only 25% of the 2FHL sources have been previously detected by Cherenkov telescopes, implying that the 2FHL provides a reservoir of candidates to be followed up at very high energies. This work closes the energy gap between the observations performed at GeV energies by Fermi -LAT on orbit and the observations performed at higher energies by Cherenkov telescopes from the ground.« less

2FHL- The Second Catalog of Hard Fermi-LAT Sources

NASA Technical Reports Server (NTRS)

Ackermann, M.; Ajello, M.; Atwood, W. B.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Gonzalez, J. Becerra; Bellazzini, R.; Bissaldi, E.;

2FHL: The Second Catalog of Hard Fermi-LAT Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ackermann, M.; Ajello, M.; Atwood, W. B.

We present a catalog of sources detected above 50 GeV by the Fermi-Large Area Telescope (LAT) in 80 months of data. The newly delivered Pass 8 event-level analysis allows the detection and characterization of sources in the 50 GeV–2TeV energy range. In this energy band, Fermi - LAT has detected 360 sources, which constitute the second catalog of hard Fermi -LAT sources (2FHL). The improved angular resolution enables the precise localization of point sources (~1.'7 radius at 68 % C. L.) and the detection and characterization of spatially extended sources. We find that 86% of the sources can be associatedmore » with counterparts at other wavelengths, of which the majority (75%) are active galactic nuclei and the rest (11%) are Galactic sources. Only 25% of the 2FHL sources have been previously detected by Cherenkov telescopes, implying that the 2FHL provides a reservoir of candidates to be followed up at very high energies. This work closes the energy gap between the observations performed at GeV energies by Fermi -LAT on orbit and the observations performed at higher energies by Cherenkov telescopes from the ground.« less

Temperature-driven Topological Phase Transition in MoTe2

NASA Astrophysics Data System (ADS)

Notis Berger, Ayelet; Andrade, Erick; Kerelsky, Alex; Cheong, Sang-Wook; Li, Jian; Bernevig, B. Andrei; Pasupathy, Abhay

The discovery of several candidates predicted to be weyl semimetals has made it possible to experimentally study weyl fermions and their exotic properties. One example is MoTe2, a transition metal dichalcogenide. At temperatures below 240 K it is predicted to be a type II Weyl semimetal with four Weyl points close to the fermi level. As with most weyl semimetals, the complicated band structure causes difficulty in distinguishing features related to bulk states and those related to topological fermi arc surface states characteristic of weyl semimetals. MoTe2 is unique because of its temperature-driven phase change. At high temperatures, MoTe2 is monoclinic, with trivial surface states. When cooled below 240K, it undergoes a first order phase transition to become an orthorhombic weyl semimetal with topologically protected fermi arc surface states. We present STM and STS measurements on MoTe2 crystals in both states. In the orthorhombic phase, we observe scattering that is consistent with the presence of the Fermi-arc surface states. Upon warming into the monoclinic phase, these features disappear in the observed interference patterns, providing direct evidence of the topological nature of the fermi arcs in the Weyl phase

Revised FINAL–REPORT NO. 2: INDEPENDENT CONFIRMATORY SURVEY SUMMARY AND RESULTS FOR THE ENRICO FERMI ATOMIC POWER PLANT, UNIT 1, NEWPORT, MICHIGAN (DOCKET NO. 50 16; RFTA 10-004) 2018-SR-02-1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erika Bailey

2011-10-27

The Enrico Fermi Atomic Power Plant, Unit 1 (Fermi 1) was a fast breeder reactor design that was cooled by sodium and operated at essentially atmospheric pressure. On May 10, 1963, the Atomic Energy Commission (AEC) granted an operating license, DPR-9, to the Power Reactor Development Company (PRDC), a consortium specifically formed to own and operate a nuclear reactor at the Fermi 1 site. The reactor was designed for a maximum capability of 430 megawatts (MW); however, the maximum reactor power with the first core loading (Core A) was 200 MW. The primary system was filled with sodium in Decembermore » 1960 and criticality was achieved in August 1963. The reactor was tested at low power during the first couple years of operation. Power ascension testing above 1 MW commenced in December 1965 immediately following the receipt of a high-power operating license. In October 1966 during power ascension, zirconium plates at the bottom of the reactor vessel became loose and blocked sodium coolant flow to some fuel subassemblies. Two subassemblies started to melt and the reactor was manually shut down. No abnormal releases to the environment occurred. Forty-two months later after the cause had been determined, cleanup completed, and the fuel replaced, Fermi 1 was restarted. However, in November 1972, PRDC made the decision to decommission Fermi 1 as the core was approaching its burn-up limit. The fuel and blanket subassemblies were shipped off-site in 1973. Following that, the secondary sodium system was drained and sent off-site. The radioactive primary sodium was stored on-site in storage tanks and 55 gallon (gal) drums until it was shipped off-site in 1984. The initial decommissioning of Fermi 1 was completed in 1975. Effective January 23, 1976, DPR-9 was transferred to the Detroit Edison Company (DTE) as a 'possession only' license (DTE 2010a). This report details the confirmatory activities performed during the second Oak Ridge Institute for Science and Education (ORISE) site visit to Fermi 1 in November 2010. The survey was strategically planned during a Unit 2 (Fermi 2) outage to take advantage of decreased radiation levels that were observed and attributed to Fermi 2 from the operating unit during the first site visit. However, during the second visit there were elevated radiation levels observed and attributed to the partially dismantled Fermi 1 reactor vessel and a waste storage box located on the 3rd floor of the Fermi 1 Turbine Building. Confirmatory surveys (unshielded) performed directly in the line of sight of these areas were affected. The objective of the confirmatory survey was to verify that the final radiological conditions were accurately and adequately described in Final Status Survey (FSS) documentation, relative to the established release criteria. This objective was achieved by performing document reviews, as well as independent measurements and sampling. Specifically, documentation of the planning, implementation, and results of the FSS were evaluated; side-by-side FSS measurement and source comparisons were performed; site areas were evaluated relative to appropriate FSS classification; and areas were assessed for residual, undocumented contamination.« less

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

DOE PAGES

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

2018-04-10

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb 2Pt 2Pb, a metal where itinerant electrons coexist with localized moments of Yb-ions which can be described in terms of effective S = 1/2 spins with dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the twomore » interacting subsystems. Lastly, we characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasi linear temperature dependence.« less

Three-Dimensional Non-Fermi-Liquid Behavior from One-Dimensional Quantum Critical Local Moments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Classen, Laura; Zaliznyak, Igor; Tsvelik, Alexei M.

We study the temperature dependence of the electrical resistivity in a system composed of critical spin chains interacting with three dimensional conduction electrons and driven to criticality via an external magnetic field. The relevant experimental system is Yb 2Pt 2Pb, a metal where itinerant electrons coexist with localized moments of Yb-ions which can be described in terms of effective S = 1/2 spins with dominantly one-dimensional exchange interaction. The spin subsystem becomes critical in a relatively weak magnetic field, where it behaves like a Luttinger liquid. We theoretically examine a Kondo lattice with different effective space dimensionalities of the twomore » interacting subsystems. Lastly, we characterize the corresponding non-Fermi liquid behavior due to the spin criticality by calculating the electronic relaxation rate and the dc resistivity and establish its quasi linear temperature dependence.« less

Implementation of a method for calculating temperature-dependent resistivities in the KKR formalism

NASA Astrophysics Data System (ADS)

Mahr, Carsten E.; Czerner, Michael; Heiliger, Christian

2017-10-01

We present a method to calculate the electron-phonon induced resistivity of metals in scattering-time approximation based on the nonequilibrium Green's function formalism. The general theory as well as its implementation in a density-functional theory based Korringa-Kohn-Rostoker code are described and subsequently verified by studying copper as a test system. We model the thermal expansion by fitting a Debye-Grüneisen curve to experimental data. Both the electronic and vibrational structures are discussed for different temperatures, and employing a Wannier interpolation of these quantities we evaluate the scattering time by integrating the electron linewidth on a triangulation of the Fermi surface. Based thereupon, the temperature-dependent resistivity is calculated and found to be in good agreement with experiment. We show that the effect of thermal expansion has to be considered in the whole calculation regime. Further, for low temperatures, an accurate sampling of the Fermi surface becomes important.

High Magnetic Field Properties of Ce2Rh3Ge5

NASA Astrophysics Data System (ADS)

Wartenbe, Mark

2015-03-01

The competition between localized and delocalized f electrons in heavy fermion materials produces a wide variety of interesting physical phenomena. Among these compounds is Ce2Rh3Ge5. This heavy-fermion system undergoes an antiferromagnetic transition below 4K and exhibits an angle dependent magnetic phase transition around 25 tesla. In addition, RF conductivity measurements in pulsed field (65T) have revealed quantum oscillations. Temperature dependence at fixed angle indicates relatively heavy effective masses of values ranging from around 3me on up to 10me. This indicates that the narrow f-electron density of states is partially hybridized close to the Fermi energy, but also places strict cryogenic constraints upon the measurement (3Helium temperatures are required). Fermi surface calculations have produced complex figures which lend validation to such rich behavior. Ryan Baumbach, Andrew Gallagher, Eric Bauer, Ross McDonald, Kuan-Wen Chen,David Graf.

Angular dependence of novel magnetic quantum oscillations in a quasi-two-dimensional multiband Fermi liquid with impurities

NASA Astrophysics Data System (ADS)

Bratkovsky, A. M.; Alexandrov, A. S.

2002-03-01

The semiclassical Lifshitz-Kosevich-type description is given for the angular dependence of quantum oscillations with combination frequencies in a multiband quasi-two-dimensional Fermi liquid with a constant number of electrons. The analytical expressions are found for the Dingle, thermal, spin, and amplitude (Yamaji) reduction factors of the novel combination harmonics, where the latter two strongly oscillate with the direction of the field [1]. At the magic angles those factors reduce to the purely two-dimensional expressions given earlier. The combination harmonics are suppressed in the presence of the nonquantized background states, and they decay exponentially faster with temperature and/or disorder compared to the standard harmonics, providing an additional tool for electronic structure determination. The theory is applied to Sr2RuO4. [1] A.M. Bratkovsky and A.S. Alexandrov, Phys. Rev. B 65, xxxx (2002); cond-mat/0104520.

Pressure dependence of critical temperature of bulk FeSe from spin fluctuation theory

NASA Astrophysics Data System (ADS)

Hirschfeld, Peter; Kreisel, Andreas; Wang, Yan; Tomic, Milan; Jeschke, Harald; Jacko, Anthony; Valenti, Roser; Maier, Thomas; Scalapino, Douglas

2013-03-01

The critical temperature of the 8K superconductor FeSe is extremely sensitive to pressure, rising to a maximum of 40K at about 10GPa. We test the ability of the current generation of fluctuation exchange pairing theories to account for this effect, by downfolding the density functional theory electronic structure for each pressure to a tight binding model. The Fermi surface found in such a procedure is then used with fixed Hubbard parameters to determine the pairing strength using the random phase approximation for the spin singlet pairing vertex. We find that the evolution of the Fermi surface captured by such an approach is alone not sufficient to explain the observed pressure dependence, and discuss alternative approaches. PJH, YW, AK were supported by DOE DE-FG02-05ER46236, the financial support of MT, HJ, and RV from the DFG Schwerpunktprogramm 1458 is kindly acknowledged.

Superconductivity in an electron band just above the Fermi level: possible route to BCS-BEC superconductivity.

PubMed

Okazaki, K; Ito, Y; Ota, Y; Kotani, Y; Shimojima, T; Kiss, T; Watanabe, S; Chen, C-T; Niitaka, S; Hanaguri, T; Takagi, H; Chainani, A; Shin, S

2014-02-28

Conventional superconductivity follows Bardeen-Cooper-Schrieffer(BCS) theory of electrons-pairing in momentum-space, while superfluidity is the Bose-Einstein condensation(BEC) of atoms paired in real-space. These properties of solid metals and ultra-cold gases, respectively, are connected by the BCS-BEC crossover. Here we investigate the band dispersions in FeTe(0.6)Se(0.4)(Tc = 14.5 K ~ 1.2 meV) in an accessible range below and above the Fermi level(EF) using ultra-high resolution laser angle-resolved photoemission spectroscopy. We uncover an electron band lying just 0.7 meV (~8 K) above EF at the Γ-point, which shows a sharp superconducting coherence peak with gap formation below Tc. The estimated superconducting gap Δ and Fermi energy [Symbol: see text]F indicate composite superconductivity in an iron-based superconductor, consisting of strong-coupling BEC in the electron band and weak-coupling BCS-like superconductivity in the hole band. The study identifies the possible route to BCS-BEC superconductivity.

The large amplitude motions of methylamine from the perspective of the highly correlated ab initio methods

NASA Astrophysics Data System (ADS)

Senent, M. L.

2018-01-01

CCSD(T)-F12 theory in connection with extended basis sets is employed to determine the electronic ground state spectroscopic parameters of methylamine at low temperatures. The geometry, the rotational constants, all the fundamental frequencies, the dipole moment and its components, and the centrifugal distortion constants, are provided. The ground vibrational state rotational constants were found to be A0 = 103067.15 MHz, B0 = 22588.29 MHz, and C0 = 21710.50 MHz and the dipole moment to be 1.4071D. Fermi displacements of the vibrational bands are predicted. The low vibrational energy levels corresponding to the large amplitude motions are determine variationally using a flexible three-dimensional model depending on three variables: the HNH bending, the NH2 wagging and the CH3 torsional coordinates. The computed levels are compared with previous experimental and calculated energies. Methylamine parameters are very sensitive to the level of ab initio calculations.

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.

PubMed

Nguyen, Linh-Nam; Lan, Yann-Wen; Chen, Jyun-Hong; Chang, Tay-Rong; Zhong, Yuan-Liang; Jeng, Horng-Tay; Li, Lain-Jong; Chen, Chii-Dong

2014-05-14

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

Cinema, Fermi problems and general education

NASA Astrophysics Data System (ADS)

Efthimiou, C. J.; Llewellyn, R. A.

2007-05-01

During the past few years the authors have developed a new approach to the teaching of physical science, a general education course typically found in the curricula of nearly every college and university. This approach, called Physics in Films (Efthimiou and Llewellyn 2006 Phys. Teach. 44 28-33), uses scenes from popular films to illustrate physical principles and has excited student interest and improved student performance. A similar approach at the senior/high-school level, nicknamed Hollywood Physics, has been developed by Chandler (2006 Phys. Teach. 44 290-2 2002 Phys. Teach. 40 420-4). The two approaches may be considered complementary as they target different student groups. The analyses of many of the scenes in Physics in Films are a direct application of Fermi calculations—estimates and approximations designed to make solutions of complex and seemingly intractable problems understandable to the student non-specialist. The intent of this paper is to provide instructors with examples they can use to develop skill in recognizing Fermi problems and making Fermi calculations in their own courses.

A Mobile Data Application for the Fermi Mission

NASA Astrophysics Data System (ADS)

Stephens, Thomas E.; Science Support Center, Fermi

2014-01-01

With the ever increasing use of smartphones and tablets among scientists and the world at large, it becomes increasingly important for projects and missions to have mobile friendly access to their data. This access could come in the form of mobile friendly websites and/or native mobile applications that allow the users to explore or access the data. The Fermi Gamma-ray Space Telescope mission has begun work along the latter path. In this poster I present the current version of the Fermi Data Portal, a native mobile application for both Android and iOS devices that allows access to various high level public data products from the Fermi Science Support Center (FSSC), the Gamma-ray Coordinate Network (GCN), and other sources. While network access is required to download data, most of the data served by the app are stored locally and are available even when a network connection is not available. This poster discusses the application's features as well as the development experience and lessons learned so far along the way.

A Mobile Data Application for the Fermi Mission

NASA Astrophysics Data System (ADS)

Stephens, T. E.

2013-10-01

With the ever increasing use of smartphones and tablets among scientists and the world at large, it becomes increasingly important for projects and missions to have mobile friendly access to their data. This access could come in the form of mobile friendly websites and/or native mobile applications that allow the users to explore or access the data. The Fermi Gamma-ray Space Telescope Mission has begun work along the latter path. In this poster I present the initial version of the Fermi Mobile Data Portal, a native application for both Android and iOS devices that allows access to various high level public data products from the Fermi Science Support Center (FSSC), the Gamma-ray Coordinate Network (GCN), and other sources. While network access is required to download data, most of the data served by the app are stored locally and are available even when a network connection is not available. This poster discusses the application's features as well as the development experience and lessons learned so far along the way.

Pseudogap Regime of a Two-dimensional Uniform Fermi Gas

NASA Astrophysics Data System (ADS)

Matsumoto, Morio; Hanai, Ryo; Inotani, Daisuke; Ohashi, Yoji

2018-01-01

We investigate pseudogap phenomena in a two-dimensional Fermi gas. Including pairing fluctuations within a self-consistent T-matrix approximation, we determine the pseudogap temperature T* below which a dip appears in the density of states ρ(ω) around the Fermi level. Evaluating T*, we identify the pseudogap region in the phase diagram of this system. We find that, while the observed Berezinskii-Kosterlitz-Thouless (BKT) transition temperature TBKTexp in a 6Li Fermi gas is in the pseudogap regime, the detailed pseudogap structure in ρ(ω) at TBKTexp still differs from a fully-gapped one, indicating the importance of amplitude fluctuations in the Cooper channel there. Since the observed TBKTexp in the weak-coupling regime cannot be explained by the recent BKT theory which only includes phase fluctuations, our results may provide a hint about how to improve this BKT theory. Although ρ(ω) has not been measured in this system, we show that the assessment of our results is still possible by using the observable Tan's contact.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw

2014-03-21

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highlymore » nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.« less

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.

PubMed

Walsh, Lee A; Green, Avery J; Addou, Rafik; Nolting, Westly; Cormier, Christopher R; Barton, Adam T; Mowll, Tyler R; Yue, Ruoyu; Lu, Ning; Kim, Jiyoung; Kim, Moon J; LaBella, Vincent P; Ventrice, Carl A; McDonnell, Stephen; Vandenberghe, William G; Wallace, Robert M; Diebold, Alain; Hinkle, Christopher L

2018-06-08

The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering. However, topological insulator based devices have been underwhelming to date primarily due to the presence of parasitic issues. An important example is the challenge of suppressing bulk conduction in Bi 2 Se 3 and achieving Fermi levels ( E F ) that reside in between the bulk valence and conduction bands so that the topologically protected surface states dominate the transport. The overwhelming majority of the Bi 2 Se 3 studies in the literature report strongly n-type materials with E F in the bulk conduction band due to the presence of a high concentration of selenium vacancies. In contrast, here we report the growth of near-intrinsic Bi 2 Se 3 with a minimal Se vacancy concentration providing a Fermi level near midgap with no extrinsic counter-doping required. We also demonstrate the crucial ability to tune E F from below midgap into the upper half of the gap near the conduction band edge by controlling the Se vacancy concentration using post-growth anneals. Additionally, we demonstrate the ability to maintain this Fermi level control following the careful, low-temperature removal of a protective Se cap, which allows samples to be transported in air for device fabrication. Thus, we provide detailed guidance for E F control that will finally enable researchers to fabricate high-performance devices that take advantage of transport through the topologically protected surface states of Bi 2 Se 3 .

Redox Potentials of Colloidal n-Type ZnO Nanocrystals: Effects of Confinement, Electron Density, and Fermi-Level Pinning by Aldehyde Hydrogenation.

PubMed

Carroll, Gerard M; Schimpf, Alina M; Tsui, Emily Y; Gamelin, Daniel R

2015-09-02

Electronically doped colloidal semiconductor nanocrystals offer valuable opportunities to probe the new physical and chemical properties imparted by their excess charge carriers. Photodoping is a powerful approach to introducing and controlling free carrier densities within free-standing colloidal semiconductor nanocrystals. Photoreduced (n-type) colloidal ZnO nanocrystals possessing delocalized conduction-band (CB) electrons can be formed by photochemical oxidation of EtOH. Previous studies of this chemistry have demonstrated photochemical electron accumulation, in some cases reaching as many as >100 electrons per ZnO nanocrystal, but in every case examined to date this chemistry maximizes at a well-defined average electron density of ⟨Nmax⟩ ≈ (1.4 ± 0.4) × 10(20) cm(-3). The origins of this maximum have never been identified. Here, we use a solvated redox indicator for in situ determination of reduced ZnO nanocrystal redox potentials. The Fermi levels of various photodoped ZnO nanocrystals possessing on average just one excess CB electron show quantum-confinement effects, as expected, but are >600 meV lower than those of the same ZnO nanocrystals reduced chemically using Cp*2Co, reflecting important differences between their charge-compensating cations. Upon photochemical electron accumulation, the Fermi levels become independent of nanocrystal volume at ⟨N⟩ above ∼2 × 10(19) cm(-3), and maximize at ⟨Nmax⟩ ≈ (1.6 ± 0.3) × 10(20) cm(-3). This maximum is proposed to arise from Fermi-level pinning by the two-electron/two-proton hydrogenation of acetaldehyde, which reverses the EtOH photooxidation reaction.

Density functional of a two-dimensional gas of dipolar atoms: Thomas-Fermi-Dirac treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Bess; Englert, Berthold-Georg

We derive the density functional for the ground-state energy of a two-dimensional, spin-polarized gas of neutral fermionic atoms with magnetic-dipole interaction, in the Thomas-Fermi-Dirac approximation. For many atoms in a harmonic trap, we give analytical solutions for the single-particle spatial density and the ground-state energy, in dependence on the interaction strength, and we discuss the weak-interaction limit that is relevant for experiments. We then lift the restriction of full spin polarization and account for a time-independent inhomogeneous external magnetic field. The field strength necessary to ensure full spin polarization is derived.

Thermally Driven Electronic Topological Transition in FeTi

NASA Astrophysics Data System (ADS)

Yang, F. C.; Muñoz, J. A.; Hellman, O.; Mauger, L.; Lucas, M. S.; Tracy, S. J.; Stone, M. B.; Abernathy, D. L.; Xiao, Yuming; Fultz, B.

2016-08-01

Ab initio molecular dynamics, supported by inelastic neutron scattering and nuclear resonant inelastic x-ray scattering, showed an anomalous thermal softening of the M5- phonon mode in B 2 -ordered FeTi that could not be explained by phonon-phonon interactions or electron-phonon interactions calculated at low temperatures. A computational investigation showed that the Fermi surface undergoes a novel thermally driven electronic topological transition, in which new features of the Fermi surface arise at elevated temperatures. The thermally induced electronic topological transition causes an increased electronic screening for the atom displacements in the M5- phonon mode and an adiabatic electron-phonon interaction with an unusual temperature dependence.

Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements

NASA Astrophysics Data System (ADS)

Feneberg, Martin; Däubler, Jürgen; Thonke, Klaus; Sauer, Rolf; Schley, Pascal; Goldhahn, Rüdiger

2008-06-01

Unintentionally degenerately doped n -type hexagonal wurtzite InN samples were studied by using Fourier-transform photoluminescence spectroscopy and reflectivity measurements. We found in luminescence overlapping band acceptor (e,A0) transitions related to two different acceptors with a strong enhancement of their intensities close to the Fermi energy of the electrons recombining with the localized holes. Our explanation is in terms of a Fermi-edge singularity of the electrons due to strongly increased electron-hole scattering. Electron-hole pairs with such resonantly enhanced oscillator strengths have been referred to as Mahan excitons. Temperature-dependent reflectivity measurements confirm this interpretation.

Electrical resistivity across the tricriticality in itinerant ferromagnet

NASA Astrophysics Data System (ADS)

Opletal, P.; Prokleška, J.; Valenta, J.; Sechovský, V.

2018-05-01

We investigate the discontinuous ferromagnetic phase diagram near tricritical point in UCo1-xRuxAl compounds by electrical resistivity measurements. Separation of phases in UCo0.995Ru0.005Al at ambient pressure and in UCo0.990Ru0.010Al at pressure of 0.2 GPa and disappearance of ferromagnetism at 0.4 GPa is confirmed. The exponent of temperature dependence of electrical resistivity implies change from Fermi liquid-like behavior to non-Fermi liquid at 0.2 GPa and reaches minimum at 0.4 GPa. Our results are compared to results obtained on the pure UCoAl and explanation for different exponents is given.

Breakdown of the coherence effects and Fermi liquid behavior in YbAl3 nanoparticles

NASA Astrophysics Data System (ADS)

Echevarria-Bonet, C.; Rojas, D. P.; Espeso, J. I.; Rodríguez Fernández, J.; Rodríguez Fernández, L.; Bauer, E.; Burdin, S.; Magalhães, S. G.; Fernández Barquín, L.

2018-04-01

A change in the Kondo lattice behavior of bulk YbAl3 has been observed when the alloy is shaped into nanoparticles (≈12 nm). Measurements of the electrical resistivity show inhibited coherence effects and deviation from the standard Fermi liquid behavior (T 2-dependence). These results are interpreted as being due to the effect of the disruption of the periodicity of the array of Kondo ions provoked by the size reduction process. Additionally, the ensemble of randomly placed nanoparticles also triggers an extra source of electronic scattering at very low temperatures (≈15 K) due to quantum interference effects.

Stability of the two-dimensional Fermi polaron

NASA Astrophysics Data System (ADS)

Griesemer, Marcel; Linden, Ulrich

2018-02-01

A system composed of an ideal gas of N fermions interacting with an impurity particle in two space dimensions is considered. The interaction between impurity and fermions is given in terms of two-body point interactions whose strength is determined by the two-body binding energy, which is a free parameter of the model. If the mass of the impurity is 1.225 times larger than the mass of a fermion, it is shown that the energy is bounded below uniformly in the number N of fermions. This result improves previous, N-dependent lower bounds, and it complements a recent, similar bound for the Fermi polaron in three space dimensions.

The multiple Coulomb scattering of very heavy charged particles.

PubMed

Wong, M; Schimmerling, W; Phillips, M H; Ludewigt, B A; Landis, D A; Walton, J T; Curtis, S B

1990-01-01

An experiment was performed at the Lawrence Berkeley Laboratory BEVALAC to measure the multiple Coulomb scattering of 650-MeV/A uranium nuclei in 0.19 radiation lengths of a Cu target. Differential distributions in the projected multiple scattering angle were measured in the vertical and horizontal planes using silicon position-sensitive detectors to determine particle trajectories before and after target scattering. The results were compared with the multiple Coulomb scattering theories of Fermi and Molière, and with a modification of the Fermi theory, using a Monte Carlo simulation. These theories were in excellent agreement with experiment at the 2 sigma level. The best quantitative agreement is obtained with the Gaussian distribution predicted by the modified Fermi theory.

Is BaCr 2 As 2 symmetrical to BaFe 2 As 2 with respect to half 3 d shell filling?

DOE PAGES

Richard, P.; van Roekeghem, A.; Lv, B. Q.; ...

2017-05-25

We have performed an angle-resolved photoemission spectroscopy study of BaCr 2As 2, which has the same crystal structure as BaFe2As2, a parent compound BaFe 2As 2 of Fe-based superconductors. We determine the Fermi surface of this material and its band dispersion down to 5 eV below the Fermi level. Very moderate band renormalization (1.35) is observed for only two bands. We attribute this small renormalization to enhanced direct exchange as compared to Fe in BaFe 2As 2, and to a larger contribution of the eg orbitals in the composition of the bands forming the Fermi surface.

Electronic structure basis for the extraordinary magnetoresistance in WTe 2

DOE PAGES

Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; ...

2014-11-19

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

Quantum oscillations in nodal line systems

NASA Astrophysics Data System (ADS)

Yang, Hui; Moessner, Roderich; Lim, Lih-King

2018-04-01

We study signatures of magnetic quantum oscillations in three-dimensional nodal line semimetals at zero temperature. The extended nature of the degenerate bands can result in a Fermi surface geometry with topological genus one, as well as a Fermi surface of electron and hole pockets encapsulating the nodal line. Moreover, the underlying two-band model to describe a nodal line is not unique, in that there are two classes of Hamiltonian with distinct band topology giving rise to the same Fermi-surface geometry. After identifying the extremal cyclotron orbits in various magnetic field directions, we study their concomitant Landau levels and resulting quantum oscillation signatures. By Landau-fan-diagram analyses, we extract the nontrivial π Berry phase signature for extremal orbits linking the nodal line.

Ultrafast strong-field photoelectron emission from biased metal surfaces: exact solution to time-dependent Schrödinger Equation

PubMed Central

Zhang, Peng; Lau, Y. Y.

2016-01-01

Laser-driven ultrafast electron emission offers the possibility of manipulation and control of coherent electron motion in ultrashort spatiotemporal scales. Here, an analytical solution is constructed for the highly nonlinear electron emission from a dc biased metal surface illuminated by a single frequency laser, by solving the time-dependent Schrödinger equation exactly. The solution is valid for arbitrary combinations of dc electric field, laser electric field, laser frequency, metal work function and Fermi level. Various emission mechanisms, such as multiphoton absorption or emission, optical or dc field emission, are all included in this single formulation. The transition between different emission processes is analyzed in detail. The time-dependent emission current reveals that intense current modulation may be possible even with a low intensity laser, by merely increasing the applied dc bias. The results provide insights into the electron pulse generation and manipulation for many novel applications based on ultrafast laser-induced electron emission. PMID:26818710

Fixation of strategies with the Moran and Fermi processes in evolutionary games

NASA Astrophysics Data System (ADS)

Liu, Xuesong; He, Mingfeng; Kang, Yibin; Pan, Qiuhui

2017-10-01

A model of stochastic evolutionary game dynamics with finite population was built. It combines the standard Moran and Fermi rules with two strategies cooperation and defection. We obtain the expressions of fixation probabilities and fixation times. The one-third rule which has been found in the frequency dependent Moran process also holds for our model. We obtain the conditions of strategy being an evolutionarily stable strategy in our model, and then make a comparison with the standard Moran process. Besides, the analytical results show that compared with the standard Moran process, fixation occurs with higher probabilities under a prisoner's dilemma game and coordination game, but with lower probabilities under a coexistence game. The simulation result shows that the fixation time in our mixed process is lower than that in the standard Fermi process. In comparison with the standard Moran process, fixation always takes more time on average in spatial populations, regardless of the game. In addition, the fixation time decreases with the growth of the number of neighbors.

Importance of nonlocal electron correlation in the BaNiS2 semimetal from quantum oscillations studies

NASA Astrophysics Data System (ADS)

Klein, Yannick; Casula, Michele; Santos-Cottin, David; Audouard, Alain; Vignolles, David; Fève, Gwendal; Freulon, Vincent; Plaçais, Bernard; Verseils, Marine; Yang, Hancheng; Paulatto, Lorenzo; Gauzzi, Andrea

2018-02-01

By means of Shubnikov-de Haas and de Haas-van Alphen oscillations, and ab initio calculations, we have studied the Fermi surface of high-quality BaNiS2 single crystals, with mean free path l ˜400 Å . The angle and temperature dependence of quantum oscillations indicates a quasi-two-dimensional Fermi surface, made of an electronlike tube centered at Γ , and of four holelike cones, generated by Dirac bands, weakly dispersive in the out-of-plane direction. Ab initio electronic structure calculations, in the density functional theory framework, show that the inclusion of screened exchange is necessary to account for the experimental Fermi pockets. Therefore, the choice of the functional becomes crucial. A modified HSE hybrid functional with 7% of exact exchange outperforms both GGA and GGA +U density functionals, signaling the importance of nonlocal screened-exchange interactions in BaNiS2, and, more generally, in 3 d compensated semimetals.

Surface electronic structure of the topological Kondo-insulator candidate correlated electron system SmB6.

PubMed

Neupane, M; Alidoust, N; Xu, S-Y; Kondo, T; Ishida, Y; Kim, D J; Liu, Chang; Belopolski, I; Jo, Y J; Chang, T-R; Jeng, H-T; Durakiewicz, T; Balicas, L; Lin, H; Bansil, A; Shin, S; Fisk, Z; Hasan, M Z

2013-01-01

The Kondo insulator SmB6 has long been known to exhibit low-temperature transport anomalies whose origin is of great interest. Here we uniquely access the surface electronic structure of the anomalous transport regime by combining state-of-the-art laser and synchrotron-based angle-resolved photoemission techniques. We observe clear in-gap states (up to ~4 meV), whose temperature dependence is contingent on the Kondo gap formation. In addition, our observed in-gap Fermi surface oddness tied with the Kramers' point topology, their coexistence with the two-dimensional transport anomaly in the Kondo hybridization regime, as well as their robustness against thermal recycling, taken together, collectively provide strong evidence for protected surface metallicity with a Fermi surface whose topology is consistent with the theoretically predicted topological Fermi surface. Our observations of systematic surface electronic structure provide the fundamental electronic parameters for the anomalous Kondo ground state of correlated electron material SmB6.

Phenomenological view at the two-component physics of cuprates

NASA Astrophysics Data System (ADS)

Teitel'baum, G. B.

2017-08-01

In the search for mechanisms of high- T c superconductivity it is critical to know the electronic spectrum in the pseudogap phase from which superconductivity evolves. The lack of ARPES data for every cuprate family precludes an agreement as to its structure, doping and temperature dependence and the role of charge ordering. No approach has been developed yet to address the issue theoretically, and we limit ourselves by the phenomenological analysis of the experimental data. We argue that, in the Fermi-liquid-like regime ubiquitous in underdoped cuprates, the spectrum consists of holes on the Fermi arcs and an electronic pocket in contrast to the idea of the Fermi surface reconstruction via charge ordering. At high temperatures, the electrons are dragged by holes while at lower temperatures they get decoupled. The longstanding issue of the origin of the negative Hall coefficient in YBCO and Hg1201 at low temperature is resolved: the electronic contribution prevails, as its mobility becomes temperature independent, while the mobility of holes, scattered by the shortwavelength charge density waves, decreases.

Carrier density independent scattering rate in SrTiO₃-based electron liquids

DOE PAGES

Mikheev, Evgeny; Raghavan, Santosh; Zhang, Jack Y.; ...

2016-02-10

We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO 3 in the regime where it scales with T n (T is the temperature and n ≤ 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (E F). We discuss that the behavior is very similar to systems traditionally identified as non-Fermimore » liquids (n < 2). This includes the cuprates and other transition metal oxide perovskites, where strikingly similar density independent scattering rates have been observed. Ultimately, the results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.« less

Peculiarities of the momentum distribution functions of strongly correlated charged fermions

NASA Astrophysics Data System (ADS)

Larkin, A. S.; Filinov, V. S.; Fortov, V. E.

2018-01-01

New numerical version of the Wigner approach to quantum thermodynamics of strongly coupled systems of particles has been developed for extreme conditions, when analytical approximations based on different kinds of perturbation theories cannot be applied. An explicit analytical expression of the Wigner function has been obtained in linear and harmonic approximations. Fermi statistical effects are accounted for by effective pair pseudopotential depending on coordinates, momenta and degeneracy parameter of particles and taking into account Pauli blocking of fermions. A new quantum Monte-Carlo method for calculations of average values of arbitrary quantum operators has been developed. Calculations of the momentum distribution functions and the pair correlation functions of degenerate ideal Fermi gas have been carried out for testing the developed approach. Comparison of the obtained momentum distribution functions of strongly correlated Coulomb systems with the Maxwell-Boltzmann and the Fermi distributions shows the significant influence of interparticle interaction both at small momenta and in high energy quantum ‘tails’.

Anisotropic Surface State Mediated RKKY Interaction Between Adatoms on a Hexagonal Lattice

NASA Astrophysics Data System (ADS)

Einstein, Theodore; Patrone, Paul

2012-02-01

Motivated by recent numerical studies of Ag on Pt(111), we derive a far-field expression for the RKKY interaction mediated by surface states on a (111) FCC surface, considering the effect of anisotropy in the Fermi edge. The main contribution to the interaction comes from electrons whose Fermi velocity vF is parallel to the vector R connecting the interacting adatoms; we show that in general, the corresponding Fermi wave-vector kF is not parallel to R. The interaction is oscillatory; the amplitude and wavelength of oscillations have angular dependence arising from the anisotropy of the surface state band structure. The wavelength, in particular, is determined by the component of the aforementioned kF that is parallel to R. Our analysis is easily generalized to other systems. For Ag on Pt(111), our results indicate that the RKKY interaction between pairs of adatoms should be nearly isotropic and so cannot account for the anisotropy found in the studies motivating our work.

Positron trapping in Y1-xPrxBa2Cu3O7-δ and the Fermi surface of YBa2Cu3O7-δ

NASA Astrophysics Data System (ADS)

Shukla, A.; Hoffmann, L.; Manuel, A. A.; Walker, E.; Barbiellini, B.; Peter, M.

1995-03-01

Temperature-dependent positron lifetime measurements in ceramic Y1-xPrxBa2Cu3O7-δ samples reveal positron trapping, in particular at low temperature and for small x. Positrons appear to be completely delocalized for T~400 K and higher. At high temperatures the lifetime for YBa2Cu3O7-δ and PrBa2Cu3O7-δ is identical (~165 ps) and close to the theoretical value. For these reasons a two-dimensional angular correlation of annihilation radiation (2D-ACAR) spectrum was measured in YBa2Cu3O7 at T=400 K. The spectrum width confirms the delocalization of the positron and the 2D-ACAR shows, apart from the one-dimensional Fermi surface due to CuO chains, a smaller Fermi surface sheet centered around the S point, in the first Brillouin zone.

Quench dynamics of the spin-imbalanced Fermi-Hubbard model in one dimension

NASA Astrophysics Data System (ADS)

Yin, Xiao; Radzihovsky, Leo

2016-12-01

We study a nonequilibrium dynamics of a one-dimensional spin-imbalanced Fermi-Hubbard model following a quantum quench of on-site interaction, realizable, for example, in Feshbach-resonant atomic Fermi gases. We focus on the post-quench evolution starting from the initial BCS and Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) ground states and analyze the corresponding spin-singlet, spin-triplet, density-density, and magnetization-magnetization correlation functions. We find that beyond a light-cone crossover time, rich post-quench dynamics leads to thermalized and pre-thermalized stationary states that display strong dependence on the initial ground state. For initially gapped BCS state, the long-time stationary state resembles thermalization with the effective temperature set by the initial value of the Hubbard interaction. In contrast, while the initial gapless FFLO state reaches a stationary pre-thermalized form, it remains far from equilibrium. We suggest that such post-quench dynamics can be used as a fingerprint for identification and study of the FFLO phase.

Ferromagnetic CaRuO3

PubMed Central

Tripathi, Shivendra; Rana, Rakesh; Kumar, Sanjay; Pandey, Parul; Singh, R. S.; Rana, D. S.

2014-01-01

The non-magnetic and non-Fermi-liquid CaRuO3 is the iso-structural analog of the ferromagnetic (FM) and Fermi-liquid SrRuO3. We show that an FM order in the orthorhombic CaRuO3 can be established by the means of tensile epitaxial strain. The structural and magnetic property correlations in the CaRuO3 films formed on SrTiO3 (100) substrate establish a scaling relation between the FM moment and the tensile strain. The strain dependent crossover from non-magnetic to FM CaRuO3 was observed to be associated with switching of non-Fermi liquid to Fermi-liquid behavior. The intrinsic nature of this strain-induced FM order manifests in the Hall resistivity too; the anomalous Hall component realizes in FM tensile-strained CaRuO3 films on SrTiO3 (100) whereas the non-magnetic compressive-strained films on LaAlO3 (100) exhibit only the ordinary Hall effect. These observations of an elusive FM order are consistent with the theoretical predictions of scaling of the tensile epitaxial strain and the magnetic order in tensile CaRuO3. We further establish that the tensile strain is more efficient than the chemical route to induce FM order in CaRuO3. PMID:24464302

Shubnikov-de Haas Oscillations in LaTiO3/SrTiO3 Heterostructures

NASA Astrophysics Data System (ADS)

Veit, Michael; Ramshaw, Brad; Chan, Mun; Suzuki, Yuri

Emergent metallic behavior in heterostructures of the Mott insulator LaTiO3 and the band insulator SrTiO3 was observed for the first time more than a decade ago. It has often been compared to other oxide systems which have a two-dimensional Fermi surface, but there have been few studies probing the dimensionality of the metallicity in this system. We have studied the transport properties of thin films of LaTiO3 on SrTiO3 substrates. Our measurements have indicated that the entirety of the LaTiO3 film is conductive with an additional contribution near the interface. When the film thickness is on the order of 3-4 unit cells, we observe two sets of Shubnikov-de Haas oscillations - low frequency oscillations with a frequency of 2T and high frequency of 36T. We attribute the observation of these two sets of oscillations to a Rashba splitting which creates a smaller inner Fermi pocket and a larger outer Fermi pocket. These results are consistent with our measurements of in plane anisotropic magnetoresistance and a weak antilocalization correction to the magnetoconductance Further measurements on the angular dependence of the oscillations indicate that their frequency does not change, thus indicating that the Fermi surface is more three-dimensional.

Searches for correlation between UHECR events and high-energy gamma-ray Fermi-LAT data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Álvarez, Ezequiel; Cuoco, Alessandro; Mirabal, Nestor

The astrophysical sources responsible for ultra high-energy cosmic rays (UHECRs) continue to be one of the most intriguing mysteries in astrophysics. We present a comprehensive search for correlations between high-energy (∼> 1 GeV) gamma-ray events from the Fermi Large Area Telescope (LAT) and UHECRs (∼> 60 EeV) detected by the Telescope Array and the Pierre Auger Observatory. We perform two separate searches. First, we conduct a standard cross-correlation analysis between the arrival directions of 148 UHECRs and 360 gamma-ray sources in the Second Catalog of Hard Fermi-LAT sources (2FHL). Second, we search for a possible correlation between UHECR directions andmore » unresolved Fermi -LAT gamma-ray emission. For the latter, we use three different methods: a stacking technique with both a model-dependent and model-independent background estimate, and a cross-correlation function analysis. We also test for statistically significant excesses in gamma rays from signal regions centered on Cen A and the Telescope Array hotspot. No significant correlation is found in any of the analyses performed, except a weak (∼< 2σ) hint of signal with the correlation function method on scales ∼ 1°. Upper limits on the flux of possible power-law gamma-ray sources of UHECRs are derived.« less

Searches for correlation between UHECR events and high-energy gamma-ray Fermi-LAT data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Álvarez, Ezequiel; Cuoco, Alessandro; Mirabal, Nestor

The astrophysical sources responsible for ultra high-energy cosmic rays (UHECRs) continue to be one of the most intriguing mysteries in astrophysics. Here, we present a comprehensive search for correlations between high-energy (≳ 1 GeV) gamma-ray events from the Fermi Large Area Telescope (LAT) and UHECRs (≳ 60 EeV) detected by the Telescope Array and the Pierre Auger Observatory. We perform two separate searches. First, we conduct a standard cross-correlation analysis between the arrival directions of 148 UHECRs and 360 gamma-ray sources in the Second Catalog of Hard Fermi-LAT sources (2FHL). Second, we search for a possible correlation between UHECR directionsmore » and unresolved Fermi-LAT gamma-ray emission. For the latter, we use three different methods: a stacking technique with both a model-dependent and model-independent background estimate, and a cross-correlation function analysis. We also test for statistically significant excesses in gamma rays from signal regions centered on Cen A and the Telescope Array hotspot. There was no significant correlation is found in any of the analyses performed, except a weak (≲ 2σ) hint of signal with the correlation function method on scales ~ 1°. Upper limits on the flux of possible power-law gamma-ray sources of UHECRs are derived.« less

Searches for correlation between UHECR events and high-energy gamma-ray Fermi-LAT data

DOE PAGES

Álvarez, Ezequiel; Cuoco, Alessandro; Mirabal, Nestor; ...

2016-12-13

The astrophysical sources responsible for ultra high-energy cosmic rays (UHECRs) continue to be one of the most intriguing mysteries in astrophysics. Here, we present a comprehensive search for correlations between high-energy (≳ 1 GeV) gamma-ray events from the Fermi Large Area Telescope (LAT) and UHECRs (≳ 60 EeV) detected by the Telescope Array and the Pierre Auger Observatory. We perform two separate searches. First, we conduct a standard cross-correlation analysis between the arrival directions of 148 UHECRs and 360 gamma-ray sources in the Second Catalog of Hard Fermi-LAT sources (2FHL). Second, we search for a possible correlation between UHECR directionsmore » and unresolved Fermi-LAT gamma-ray emission. For the latter, we use three different methods: a stacking technique with both a model-dependent and model-independent background estimate, and a cross-correlation function analysis. We also test for statistically significant excesses in gamma rays from signal regions centered on Cen A and the Telescope Array hotspot. There was no significant correlation is found in any of the analyses performed, except a weak (≲ 2σ) hint of signal with the correlation function method on scales ~ 1°. Upper limits on the flux of possible power-law gamma-ray sources of UHECRs are derived.« less

Hartree-Fock treatment of Fermi polarons using the Lee-Low-Pine transformation

NASA Astrophysics Data System (ADS)

Kain, Ben; Ling, Hong Y.

2017-09-01

We consider the Fermi polaron problem at zero temperature, where a single impurity interacts with noninteracting host fermions. We approach the problem starting with a Fröhlich-like Hamiltonian where the impurity is described with canonical position and momentum operators. We apply the Lee-Low-Pine (LLP) transformation to change the fermionic Fröhlich Hamiltonian into the fermionic LLP Hamiltonian, which describes a many-body system containing host fermions only. We adapt the self-consistent Hartree-Fock (HF) approach, first proposed by Edwards, to the fermionic LLP Hamiltonian in which a pair of host fermions with momenta k and k' interact with a potential proportional to k .k' . We apply the HF theory, which has the advantage of not restricting the number of particle-hole pairs, to repulsive Fermi polarons in one dimension. When the impurity and host fermion masses are equal our variational ansatz, where HF orbitals are expanded in terms of free-particle states, produces results in excellent agreement with McGuire's exact analytical results based on the Bethe ansatz. This work raises the prospect of using the HF ansatz and its time-dependent generalization as building blocks for developing all-coupling theories for both equilibrium and nonequilibrium Fermi polarons in higher dimensions.

Numerical simulation of the nonlinear dynamics of harmonically driven Riesz-fractional extensions of the Fermi-Pasta-Ulam chains

NASA Astrophysics Data System (ADS)

Macías-Díaz, J. E.

2018-02-01

In this work, we introduce a spatially discrete model that is a modification of the well-known α-Fermi-Pasta-Ulam chain with damping. The system is perturbed at one end by a harmonic disturbance irradiating at a frequency in the forbidden band-gap of the classical regime, and a nonlocal coupling between the oscillators is considered using discrete Riesz fractional derivatives. We propose fully discrete expressions to approximate an energy functional of the system, and we use them to calculate the total energy of fractional chains over a relatively long period of time [Fract. Diff. Appl. 4 (2004) 153-162]. The approach is thoroughly tested in the case of local couplings against known qualitative results, including simulations of the process of nonlinear recurrence in the traditional chains of anharmonic oscillators. As an application, we provide evidence that the process of supratransmission is present in spatially discrete Fermi-Pasta-Ulam lattices with Riesz fractional derivatives in space. Moreover, we perform numerical experiments for small and large amplitudes of the harmonic disturbance. In either case, we establish the dependency of the critical amplitude at which supratransmission begins as a function of the driving frequency. Our results are in good agreement with the analytic predictions for the classical Fermi-Pasta-Ulam chain.

Optical Asymmetry and Nonlinear Light Scattering from Colloidal Gold Nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lien, Miao-Bin; Kim, Ji-Young; Han, Myung-Geun

A systematic study is presented of the intensity-dependent nonlinear light scattering spectra of gold nanorods under resonant excitation of the longitudinal surface plasmon resonance (SPR). The spectra exhibit features due to coherent second and third harmonic generation as well as a broadband feature that has been previously attributed to multiphoton photoluminescence arising primarily from interband optical transitions in the gold. A detailed study of the spectral dependence of the scaling of the scattered light with excitation intensity shows unexpected scaling behavior of the coherent signals, which is quantitatively accounted for by optically induced damping of the SPR mode through amore » Fermi liquid model of the electronic scattering. The broadband feature is shown to arise not from luminescence, but from scattering of the secondorder longitudinal SPR mode with the electron gas, where efficient excitation of the 2nd order mode arises from an optical asymmetry of the nanorod. The electronic-temperature-dependent plasmon damping and the Fermi-Dirac distribution together determine the intensity dependence of the broadband emission, and the structure-dependent absorption spectrum determines the spectral shape through the fluctuation-dissipation theorem. Hence a complete self-consistent picture of both coherent and incoherent light scattering is obtained with a single set of physical parameters.« less

Optical Asymmetry and Nonlinear Light Scattering from Colloidal Gold Nanorods

DOE PAGES

Lien, Miao-Bin; Kim, Ji-Young; Han, Myung-Geun; ...

2017-05-16

A systematic study is presented of the intensity-dependent nonlinear light scattering spectra of gold nanorods under resonant excitation of the longitudinal surface plasmon resonance (SPR). The spectra exhibit features due to coherent second and third harmonic generation as well as a broadband feature that has been previously attributed to multiphoton photoluminescence arising primarily from interband optical transitions in the gold. A detailed study of the spectral dependence of the scaling of the scattered light with excitation intensity shows unexpected scaling behavior of the coherent signals, which is quantitatively accounted for by optically induced damping of the SPR mode through amore » Fermi liquid model of the electronic scattering. The broadband feature is shown to arise not from luminescence, but from scattering of the secondorder longitudinal SPR mode with the electron gas, where efficient excitation of the 2nd order mode arises from an optical asymmetry of the nanorod. The electronic-temperature-dependent plasmon damping and the Fermi-Dirac distribution together determine the intensity dependence of the broadband emission, and the structure-dependent absorption spectrum determines the spectral shape through the fluctuation-dissipation theorem. Hence a complete self-consistent picture of both coherent and incoherent light scattering is obtained with a single set of physical parameters.« less

Two-dimensional Fermi gas in spin-dependent magnetic fields

NASA Astrophysics Data System (ADS)

Anzai, Takaaki; Nishida, Yusuke

Experimental techniques in ultracold atoms allow us to tune parameters of the system at will. In particular, synthetic magnetic fields have been created by using the atom-light coupling and, therefore, it is interesting to study what kinds of quantum phenomena appear in correlated ultracold atoms subjected to synthetic magnetic fields. In this work, we consider a two-dimensional Fermi gas with two spin states in spin-dependent magnetic fields which are assumed to be antiparallel for different spin states. By studying the ground-state phase diagram within the mean-field approximation, we find quantum spin Hall and superfluid phases separated by a second-order phase transition. We also show that there are regions where the superfluid gap parameter is proportional to the attractive coupling, which is in marked contrast to the usual exponential dependence. Moreover, we elucidate that the universality class of the phase transition belongs to that of the XY model at special points of the phase boundary, while it belongs to that of a dilute Bose gas anywhere else. International Research Center for Nanoscience and Quantum Physics, Tokyo Institute of Technology.

Systematics of the temperature-dependent interplane resistivity in Ba(Fe 1-xM x)₂As₂ (M=Co, Rh, Ni, and Pd)

DOE PAGES

Tanatar, M. A.; Ni, N.; Thaler, A.; ...

2011-07-27

Temperature-dependent interplane resistivity ρ c(T) was measured systematically as a function of transition-metal substitution in the iron-arsenide superconductors Ba(Fe 1-xM x)₂As₂, M=Ni, Pd, Rh. The data are compared with the behavior found in Ba(Fe 1-xCo x)₂As₂, revealing resistive signatures of pseudogap. In all compounds we find resistivity crossover at a characteristic pseudogap temperature T* from nonmetallic to metallic temperature dependence on cooling. Suppression of T* proceeds very similarly in cases of Ni and Pd doping and much faster than in similar cases of Co and Rh doping. In cases of Co and Rh doping an additional minimum in the temperature-dependentmore » ρ c emerges for high dopings, when superconductivity is completely suppressed. These features are consistent with the existence of a charge gap covering part of the Fermi surface. The part of the Fermi surface affected by this gap is notably larger for Ni- and Pd-doped compositions than in Co- and Rh-doped compounds.« less

Description of atomic burials in compact globular proteins by Fermi-Dirac probability distributions.

PubMed

Gomes, Antonio L C; de Rezende, Júlia R; Pereira de Araújo, Antônio F; Shakhnovich, Eugene I

2007-02-01

We perform a statistical analysis of atomic distributions as a function of the distance R from the molecular geometrical center in a nonredundant set of compact globular proteins. The number of atoms increases quadratically for small R, indicating a constant average density inside the core, reaches a maximum at a size-dependent distance R(max), and falls rapidly for larger R. The empirical curves turn out to be consistent with the volume increase of spherical concentric solid shells and a Fermi-Dirac distribution in which the distance R plays the role of an effective atomic energy epsilon(R) = R. The effective chemical potential mu governing the distribution increases with the number of residues, reflecting the size of the protein globule, while the temperature parameter beta decreases. Interestingly, betamu is not as strongly dependent on protein size and appears to be tuned to maintain approximately half of the atoms in the high density interior and the other half in the exterior region of rapidly decreasing density. A normalized size-independent distribution was obtained for the atomic probability as a function of the reduced distance, r = R/R(g), where R(g) is the radius of gyration. The global normalized Fermi distribution, F(r), can be reasonably decomposed in Fermi-like subdistributions for different atomic types tau, F(tau)(r), with Sigma(tau)F(tau)(r) = F(r), which depend on two additional parameters mu(tau) and h(tau). The chemical potential mu(tau) affects a scaling prefactor and depends on the overall frequency of the corresponding atomic type, while the maximum position of the subdistribution is determined by h(tau), which appears in a type-dependent atomic effective energy, epsilon(tau)(r) = h(tau)r, and is strongly correlated to available hydrophobicity scales. Better adjustments are obtained when the effective energy is not assumed to be necessarily linear, or epsilon(tau)*(r) = h(tau)*r(alpha,), in which case a correlation with hydrophobicity scales is found for the product alpha(tau)h(tau)*. These results indicate that compact globular proteins are consistent with a thermodynamic system governed by hydrophobic-like energy functions, with reduced distances from the geometrical center, reflecting atomic burials, and provide a conceptual framework for the eventual prediction from sequence of a few parameters from which whole atomic probability distributions and potentials of mean force can be reconstructed. Copyright 2006 Wiley-Liss, Inc.

Direct Evidence for Delocalization of Charge Carriers at the Fermi Level in a Doped Conducting Polymer

NASA Astrophysics Data System (ADS)

Zhuo, Jing-Mei; Zhao, Li-Hong; Chia, Perq-Jon; Sim, Wee-Sun; Friend, Richard H.; Ho, Peter K. H.

2008-05-01

The infrared absorption spectrum of the polaron charges at the Fermi level EF in a heavily p-doped conducting poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) film has been measured using interferogram-modulated Fourier-transform charge-modulation spectroscopy. The spectrum indicates softer phonons and weaker electron-phonon coupling riding on a strongly redshifted Drude-like electronic transition, different from the population-averaged “bulk” spectrum. This provides direct evidence that the EF holes are sufficiently delocalized even in such disordered materials to reside in an energy continuum (band states) while the rest of the hole population resides in self-localized gap states.

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chenggong; Wang, Congcong; Kauppi, John

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

Electronic properties of core-shell nanowire resonant tunneling diodes

PubMed Central

2014-01-01

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells <10 nm, and 5 nm InP barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping. PMID:25288912

Electronic properties of core-shell nanowire resonant tunneling diodes.

PubMed

Zervos, Matthew

2014-01-01

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells <10 nm, and 5 nm InP barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping.

Electronic structures of U X3 (X =Al , Ga, and In) studied by photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Fujimori, Shin-ichi; Kobata, Masaaki; Takeda, Yukiharu; Okane, Tetsuo; Saitoh, Yuji; Fujimori, Atsushi; Yamagami, Hiroshi; Haga, Yoshinori; Yamamoto, Etsuji; Ōnuki, Yoshichika

2017-09-01

The electronic structures of U X3 (X =Al , Ga , and In ) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl3 and UGa3 were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculations. The topologies of the Fermi surfaces and the band structures of UAl3 and UGa3 were explained reasonably well by the calculation, although bands near the Fermi level (EF) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl3 and UGa3 are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their different magnetic properties. No significant changes were observed between the ARPES spectra of UGa3 in the paramagnetic and antiferromagnetic phases, suggesting that UGa3 is an itinerant weak antiferromagnet. The effect of chemical pressure on the electronic structures of U X3 compounds was also studied by utilizing the smaller lattice constants of UAl3 and UGa3 than that of UIn3. The valence band spectrum of UIn3 is accompanied by a satellitelike structure on the high-binding-energy side. The core-level spectrum of UIn3 is also qualitatively different from those of UAl3 and UGa3. These findings suggest that the U 5 f states in UIn3 are more localized than those in UAl3 and UGa3.

Heavy fermion behavior in the quasi-one-dimensional Kondo lattice CeCo 2Ga 8

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Le; Fu, Zhaoming; Sun, Jianping

Dimensionality plays an essential role in determining the anomalous non-Fermi liquid properties in heavy fermion systems. So far most heavy fermion compounds are quasi-two-dimensional or three-dimensional. Here we report the synthesis and systematic investigations of the single crystals of the quasi-one-dimensional Kondo lattice CeCo 2Ga 8. Resistivity measurements at ambient pressure reveal the onset of coherence at T * ≈ 20 K and non-Fermi liquid behavior with linear temperature dependence over a decade in temperature from 2 to 0.1 K. The specific heat increases logarithmically with lowering temperature between 10 and 2 K and reaches 800 mJ/mol K 2 atmore » 1 K, suggesting that CeCo 2Ga 8 is a heavy fermion compound in the close vicinity of a quantum critical point. Resistivity measurements under pressure further confirm the non-Fermi liquid behavior in a large temperature–pressure range. The magnetic susceptibility is found to follow the typical behavior for a one-dimensional spin chain from 300 K down to T *, and first-principles calculations predict flat Fermi surfaces for the itinerant f-electron bands. These suggest that CeCo 2Ga 8 is a rare example of the quasi-one-dimensional Kondo lattice, but its non-Fermi liquid behaviors resemble those of the quasi-two-dimensional YbRh 2Si 2 family. The study of the quasi-one-dimensional CeCo 2Ga 8 family may therefore help us to understand the role of dimensionality on heavy fermion physics and quantum criticality.« less

Heavy fermion behavior in the quasi-one-dimensional Kondo lattice CeCo2Ga8

NASA Astrophysics Data System (ADS)

Wang, Le; Fu, Zhaoming; Sun, Jianping; Liu, Min; Yi, Wei; Yi, Changjiang; Luo, Yongkang; Dai, Yaomin; Liu, Guangtong; Matsushita, Yoshitaka; Yamaura, Kazunari; Lu, Li; Cheng, Jin-Guang; Yang, Yi-feng; Shi, Youguo; Luo, Jianlin

2017-07-01

Dimensionality plays an essential role in determining the anomalous non-Fermi liquid properties in heavy fermion systems. So far most heavy fermion compounds are quasi-two-dimensional or three-dimensional. Here we report the synthesis and systematic investigations of the single crystals of the quasi-one-dimensional Kondo lattice CeCo2Ga8. Resistivity measurements at ambient pressure reveal the onset of coherence at T * ≈ 20 K and non-Fermi liquid behavior with linear temperature dependence over a decade in temperature from 2 to 0.1 K. The specific heat increases logarithmically with lowering temperature between 10 and 2 K and reaches 800 mJ/mol K2 at 1 K, suggesting that CeCo2Ga8 is a heavy fermion compound in the close vicinity of a quantum critical point. Resistivity measurements under pressure further confirm the non-Fermi liquid behavior in a large temperature-pressure range. The magnetic susceptibility is found to follow the typical behavior for a one-dimensional spin chain from 300 K down to T *, and first-principles calculations predict flat Fermi surfaces for the itinerant f-electron bands. These suggest that CeCo2Ga8 is a rare example of the quasi-one-dimensional Kondo lattice, but its non-Fermi liquid behaviors resemble those of the quasi-two-dimensional YbRh2Si2 family. The study of the quasi-one-dimensional CeCo2Ga8 family may therefore help us to understand the role of dimensionality on heavy fermion physics and quantum criticality.

Heavy fermion behavior in the quasi-one-dimensional Kondo lattice CeCo 2Ga 8

DOE PAGES

Wang, Le; Fu, Zhaoming; Sun, Jianping; ...

2017-07-04

Dimensionality plays an essential role in determining the anomalous non-Fermi liquid properties in heavy fermion systems. So far most heavy fermion compounds are quasi-two-dimensional or three-dimensional. Here we report the synthesis and systematic investigations of the single crystals of the quasi-one-dimensional Kondo lattice CeCo 2Ga 8. Resistivity measurements at ambient pressure reveal the onset of coherence at T * ≈ 20 K and non-Fermi liquid behavior with linear temperature dependence over a decade in temperature from 2 to 0.1 K. The specific heat increases logarithmically with lowering temperature between 10 and 2 K and reaches 800 mJ/mol K 2 atmore » 1 K, suggesting that CeCo 2Ga 8 is a heavy fermion compound in the close vicinity of a quantum critical point. Resistivity measurements under pressure further confirm the non-Fermi liquid behavior in a large temperature–pressure range. The magnetic susceptibility is found to follow the typical behavior for a one-dimensional spin chain from 300 K down to T *, and first-principles calculations predict flat Fermi surfaces for the itinerant f-electron bands. These suggest that CeCo 2Ga 8 is a rare example of the quasi-one-dimensional Kondo lattice, but its non-Fermi liquid behaviors resemble those of the quasi-two-dimensional YbRh 2Si 2 family. The study of the quasi-one-dimensional CeCo 2Ga 8 family may therefore help us to understand the role of dimensionality on heavy fermion physics and quantum criticality.« less

Electric Field-Dependent Photoluminescence in Multilayer Transition Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Stanev, T. K.; Henning, A.; Sangwan, V. K.; Speiser, N.; Stern, N. P.; Lauhon, L. J.; Hersam, M. C.; Wang, K.; Valencia, D.; Charles, J.; Kubis, T. C.

Owing to interlayer coupling, transition metal dichalcogenides (TMDCs) such as MoS2 exhibit strong layer dependence of optical and electronic phenomena such as the band gap and trion and neutral exciton population dynamics. Here, we systematically measure the effect of layer number on the optical response of multilayer MoS2 in an external electric field, observing field and layer number dependent emission energy and photoluminescence intensity. These effects are studied in few (2-6) and bulk (11 +) layered structures at low temperatures. In MoS2\\ the observed layer dependence arises from several mechanisms, including interlayer charge transfer, band structure, Stark Effect, Fermi level changes, screening, and surface effects, so it can be challenging to isolate how these mechanisms impact the observables. Because it behaves like a stack of weakly interacting monolayers rather than multilayer or bulk, ReS2 provides a comparison to traditional TMDCs to help isolate the underlying physical mechanisms dictating the response of multilayers. This work is supported by the National Science Foundation MRSEC program (DMR-1121262), and the 2-DARE Grant (EFRI-1433510). N.P.S. is an Alfred P. Sloan Research Fellow.

FAST TRACK COMMUNICATION: Conformation dependence of molecular conductance: chemistry versus geometry

NASA Astrophysics Data System (ADS)

Finch, Christopher M.; Sirichantaropass, Skon; Bailey, Steven W.; Grace, Iain M.; García-Suárez, Víctor M.; Lambert, Colin J.

2008-01-01

Recent experiments by Venkataraman et al (2006 Nature 442 904) on a series of molecular wires with varying chemical compositions revealed a linear dependence of the conductance on cos2 θ, where θ is the angle of twist between neighbouring aromatic rings. To investigate whether or not this dependence has a more general applicability, we present a first-principles theoretical study of the transport properties of this family of molecules as a function of the chemical composition, conformation and the contact atom and geometry. If the Fermi energy EF lies within the HOMO-LUMO (highest occupied molecular orbital-lowest unoccupied molecular orbital) gap, then we reproduce the above experimental results. More generally, however, if EF is located within either the LUMO or the HOMO states, the presence of resonances destroys the linear dependence of the conductance on cos2 θ and gives rise to non-monotonic behaviour associated with the level structure of the different molecules. Our results suggest that the above experiments provide a novel method for extracting spectroscopic information about molecules contacted to electrodes.

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Liu, W.; Butté, R.; Dussaigne, A.; Grandjean, N.; Deveaud, B.; Jacopin, G.

2016-11-01

We study the carrier-density-dependent recombination dynamics in m -plane InGaN/GaN multiple quantum wells in the presence of n -type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bimolecular recombination coefficients. Contrary to the standard electron-hole picture, our results confirm the strong influence of excitons even at room temperature. Indeed, at 300 K, excitons represent up to 63 ± 6% of the photoexcited carriers. In addition, following the Shockley-Read-Hall model, we extract the electron and hole capture rates by deep levels and demonstrate that the increase in the effective lifetime with injected carrier density is due to asymmetric capture rates in presence of an n -type background doping. Thanks to the proper determination of the density-dependent recombination coefficients up to high injection densities, our method provides a way to evaluate the importance of Auger recombination.

Self-assembled patches in PtSi/n-Si (111) diodes

NASA Astrophysics Data System (ADS)

Afandiyeva, I. M.; Altιndal, Ş.; Abdullayeva, L. K.; Bayramova, A. İ.

2018-05-01

Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (N Dapp), the potential difference between the Fermi energy level and the bottom of the conduction band (V n), apparent barrier height (Φ Bapp), series resistance (R s) and the interface state density N ss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCO5) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCO5, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanismsmore » associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.« less

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

NASA Astrophysics Data System (ADS)

Que, Yande; Xiao, Wende; Chen, Hui; Wang, Dongfei; Du, Shixuan; Gao, Hong-Jun

2015-12-01

The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

NASA Astrophysics Data System (ADS)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

Pressure and temperature dependence of the Ce valence and c -f hybridization gap in Ce T2In5(T =Co ,Rh ,Ir ) heavy-fermion superconductors

NASA Astrophysics Data System (ADS)

Yamaoka, H.; Yamamoto, Y.; Schwier, E. F.; Honda, F.; Zekko, Y.; Ohta, Y.; Lin, J.-F.; Nakatake, M.; Iwasawa, H.; Arita, M.; Shimada, K.; Hiraoka, N.; Ishii, H.; Tsuei, K.-D.; Mizuki, J.

2015-12-01

Pressure- and temperature-induced changes in the Ce valence and c -f hybridization of the Ce115 superconductors have been studied systematically. Resonant x-ray-emission spectroscopy indicated that the increase of the Ce valence with pressure was significant for CeCoIn5, and moderate for CeIr (In0.925Cd0.075)5 . We found no abrupt change of the Ce valence in the Kondo regime for CeIr (In0.925Cd0.075)5 , which suggests that valence fluctuations are unlikely to mediate the superconductivity in this material. X-ray-diffraction results were consistent with the pressure-induced change in the Ce valence. High-resolution photoelectron spectroscopy revealed a temperature-dependent reduction of the spectral intensity at the Fermi level, indicating enhanced c -f hybridization on cooling.

Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions

NASA Astrophysics Data System (ADS)

Park, K. W.; Nair, H. P.; Crook, A. M.; Bank, S. R.; Yu, E. T.

2011-09-01

Scanning capacitance microscopy is used to characterize the electronic properties of ErAs nanoparticles embedded in GaAs pn junctions grown by molecular beam epitaxy. Voltage-dependent capacitance images reveal localized variations in subsurface electronic structure near buried ErAs nanoparticles at lateral length scales of 20-30 nm. Numerical modeling indicates that these variations arise from inhomogeneities in charge modulation due to Fermi level pinning behavior associated with the embedded ErAs nanoparticles. Statistical analysis of image data yields an average particle radius of 6-8 nm—well below the direct resolution limit in scanning capacitance microscopy but discernible via analysis of patterns in nanoscale capacitance images.

Generalized reciprocity theorem for semiconductor devices

NASA Technical Reports Server (NTRS)

Misiakos, K.; Lindholm, F. A.

1985-01-01

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Optical properties of graphene nanoflakes: Shape matters.

PubMed

Mansilla Wettstein, Candela; Bonafé, Franco P; Oviedo, M Belén; Sánchez, Cristián G

2016-06-14

In recent years there has been significant debate on whether the edge type of graphene nanoflakes (GNFs) or graphene quantum dots (GQDs) are relevant for their electronic structure, thermal stability, and optical properties. Using computer simulations, we have proven that there is a fundamental difference in the absorption spectra between samples of the same shape, similar size but different edge type, namely, armchair or zigzag edges. These can be explained by the presence of electronic structures near the Fermi level which are localized on the edges. These features are also evident from the dependence of band gap on the GNF size, which shows three very distinct trends for different shapes and edge geometries.

Optical properties of graphene nanoflakes: Shape matters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mansilla Wettstein, Candela; Bonafé, Franco P.; Sánchez, Cristián G., E-mail: cgsanchez@fcq.unc.edu.ar

In recent years there has been significant debate on whether the edge type of graphene nanoflakes (GNFs) or graphene quantum dots (GQDs) are relevant for their electronic structure, thermal stability, and optical properties. Using computer simulations, we have proven that there is a fundamental difference in the absorption spectra between samples of the same shape, similar size but different edge type, namely, armchair or zigzag edges. These can be explained by the presence of electronic structures near the Fermi level which are localized on the edges. These features are also evident from the dependence of band gap on the GNFmore » size, which shows three very distinct trends for different shapes and edge geometries.« less

Enhancement of pairing interaction and magnetic fluctuations toward a band insulator in an electron-doped Li(x)ZrNCl Superconductor.

PubMed

Kasahara, Yuichi; Kishiume, Tsukasa; Takano, Takumi; Kobayashi, Katsuki; Matsuoka, Eiichi; Onodera, Hideya; Kuroki, Kazuhiko; Taguchi, Yasujiro; Iwasa, Yoshihiro

2009-08-14

The doping dependence of specific heat and magnetic susceptibility has been investigated for Li(x)ZrNCl superconductors derived from a band insulator. As the carrier concentration is decreased, the anisotropy of superconducting gap changes from highly anisotropic to almost isotropic. It was also found that, upon reducing carrier density, the superconducting coupling strength and the magnetic susceptibility are concomitantly enhanced in parallel with T(c), while the density of states at the Fermi level is kept almost constant. Theoretical calculations taking into account the on-site Coulomb interaction reproduced the experimental results, suggesting a possible pairing mediated by magnetic fluctuations, even in the doped band insulators.

Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures

NASA Astrophysics Data System (ADS)

Shojaei, B.; McFadden, A. P.; Pendharkar, M.; Lee, J. S.; Flatté, M. E.; Palmstrøm, C. J.

2018-06-01

In an ideal InAs/GaSb bilayer of appropriate dimension, in-plane electron and hole bands overlap and hybridize, and a topologically nontrivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's potential landscape, however, is subject to microscopic perturbations originating from material imperfections. In this work, the effect of disorder on the electronic structure of InAs/GaSb (001) bilayers was studied by observing the temperature and magnetic-field dependence of the resistance of a dual-gated heterostructure gate-tuned through the inverted to normal gap regimes. Conduction with the electronic structure tuned to the inverted (predicted topological) regime and the Fermi level in the hybridization gap was qualitatively similar to behavior in a disordered two-dimensional system. The impact of charged impurities and interface roughness on the formation of topologically protected edge states and an insulating bulk was estimated. The experimental evidence and estimates of disorder in the potential landscape indicated that the potential fluctuations in state-of-the-art films are sufficiently strong such that conduction with the electronic structure tuned to the predicted topological insulator (TI) regime and the Fermi level in the hybridization gap was dominated by a symplectic metal phase rather than a TI phase. The implications are that future efforts must address disorder in this system, and focus must be placed on the reduction of defects and disorder in these heterostructures if a TI regime is to be achieved.

Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Junfeng; Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt; Liao, Cheng, E-mail: Cliao@pku.edu.cn

2011-02-15

Graphical abstract: From XPS core level spectras, compared with as-depositing CdS (sample A), the Fermi level is shifting closer to the conduction band after annealing treatment in the oxygen (sample B) while it is shifting closer to the valence band after annealing treatment in the argon-hydrogen (sample C). That might be the main reason of the different performance of the final devices. The open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen, while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Research highlights: {yields} Twomore » different methods (oxidation and reduction) were used to anneal CdS films for CdTe solar cells. {yields} Electrical properties were analyzed by XPS (Fermi levels of CdS films). {yields} Annealing treatment in oxidation atmosphere could shift Fermi level of CdS film to higher position and consequently improve the CdS/CdTe junction and performance of solar cells. -- Abstract: CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon-hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.« less

Temperature-dependent errors in nuclear lattice simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Dean; Thomson, Richard

2007-06-15

We study the temperature dependence of discretization errors in nuclear lattice simulations. We find that for systems with strong attractive interactions the predominant error arises from the breaking of Galilean invariance. We propose a local 'well-tempered' lattice action which eliminates much of this error. The well-tempered action can be readily implemented in lattice simulations for nuclear systems as well as cold atomic Fermi systems.

VizieR Online Data Catalog: Fermi/non-Fermi blazars jet power and accretion (Chen+, 2015)

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Zhang, X.; Zhang, H. J.; Yu, X. L.

2017-11-01

We selected the sample using radio catalogues to get the widest possible sample of blazars based on their radio properties. We split them into Fermi-detected sources and non-Fermi detections. Massaro et al. (2009, J/A+A/495/691) created the "Multifrequency Catalogue of Blazars" (Roma-BZCAT), which classifies blazars into three main groups based on their spectral properties. In total, we have a sample containing 177 clean Fermi blazars (96 Fermi FSRQs and 81 Fermi BL Lacs) and 133 non-Fermi blazars (105 non-Fermi FSRQs and 28 non-Fermi BL Lacs). (2 data files).

Holographic non-Fermi liquid in a background magnetic field

NASA Astrophysics Data System (ADS)

Basu, Pallab; He, Jianyang; Mukherjee, Anindya; Shieh, Hsien-Hang

2010-08-01

We study the effects of a nonzero magnetic field on a class of 2+1 dimensional non-Fermi liquids, recently found in [Hong Liu, John McGreevy, and David Vegh, arXiv:0903.2477.] by considering properties of a Fermionic probe in an extremal AdS4 black hole background. Introducing a similar fermionic probe in a dyonic AdS4 black hole geometry, we find that the effect of a magnetic field could be incorporated in a rescaling of the probe fermion’s charge. From this simple fact, we observe interesting effects like gradual disappearance of the Fermi surface and quasiparticle peaks at large magnetic fields and changes in other properties of the system. We also find Landau level like structures and oscillatory phenomena similar to the de-Haas-van Alphen effect.

Origin of the energy level alignment at organic/organic interfaces: The role of structural defects

NASA Astrophysics Data System (ADS)

Bussolotti, Fabio; Yang, Jinpeng; Hinderhofer, Alexander; Huang, Yuli; Chen, Wei; Kera, Satoshi; Wee, Andrew T. S.; Ueno, Nobuo

2014-03-01

In this paper, the electronic properties of as-deposited and N2-exposedCuPc/F16CuPc interface, a prototype system for organic photovoltaic applications, are investigated by using ultralow background, high-sensitivity photoemission spectroscopy. It is found that (i) N2 exposure significantly modifies the energy level alignment (ELA) at the interface between CuPc and F16CuPc layer and (ii) the direction of the N2-induced energy level shift of the CuPc depends on the position of the Fermi level (EF) in the CuPc highest occupied molecular orbital-lowest unoccupied molecular orbital gap of the as-deposited film. These observations are related to the changes in the density of gap states (DOGS) produced by structural imperfections in the molecular packing geometry, as introduced by the N2 penetration into the CuPc layer. This result demonstrates the key role of structure-induced DOGS in controlling the ELA at organic/organic interfaces.

Anomalous torsional tripling in the ν9 and ν10 CH3-deformation modes of ethane 12CH313CH3

NASA Astrophysics Data System (ADS)

Lattanzi, F.; di Lauro, C.

2017-12-01

We have investigated the anomalous torsional behavior in the coupled ν9 and ν10 vibrational fundamentals of 12CH313CH3, both states exhibiting a splitting into three components, instead of two, only in those rotational levels which are very close to resonance. We conclude that the intrinsic additional splitting, which occurs in the E-torsional components, for these two vibrational states is too small to be detected in the high resolution infrared spectrum, but it is substantively enhanced by their coupling. It is shown that this effect requires the simultaneous action of torsion independent operators, such as Fermi-type and z-Coriolis, not allowed in the more symmetric isotopologue 12CH312CH3, and torsion dependent operators, such as torsional-Coriolis, connecting the two vibrational states. Our conclusions lead to a simple model for the coupling of ν9 and ν10, with effective Fermi-type matrix elements W for the A-torsional components, and W ± w for the two pairs of E-torsional components. This causes the additional splitting in the E-pairs. This model is consistent with the mechanism causing the Coriolis-dependent decrease of the A-E torsional splitting in degenerate vibrational states. Exploratory calculations were performed making use of results from a normal mode analysis, showing that the effects predictable by the proposed model are of the correct order of magnitude compared to the observed features, with coupling parameter values reasonably consistent with those determined by the least squares fit of the observed transition wavenumbers.

Propagation and head-on collisions of ion-acoustic solitons in a Thomas-Fermi magnetoplasma: Relativistic degeneracy effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akbari-Moghanjoughi, M.

Small amplitude propagation and quasielastic head-on collision of ion-acoustic solitary waves (IASWs) are investigated in a degenerate Thomas-Fermi electron-positron-ion magnetized plasma using extended Poincare-Lighthill-Kuo reductive perturbation method for both ultrarelativistic and nonrelativistic electron/positron degeneracy cases. It is observed that both bright- and dark-type solitary shapes can exist in such plasma, depending on two critical values. The shape of ion-acoustic solitary structures as well as sign of their collision phase shifts are both determined by the same critical values. It is further revealed that relativistic degeneracy of electrons/positrons has significant effect on the propagation as well as interaction of IASWs.

Short-period oscillations in photoemission from thin films of Cr(100)

NASA Astrophysics Data System (ADS)

Vyalikh, Denis V.; Zahn, Peter; Richter, Manuel; Dedkov, Yu. S.; Molodtsov, S. L.

2005-07-01

Angle-resolved photoemission (PE) study of thin films of Cr grown on Fe(100) reveals thickness-dependent short-period oscillations of the PE intensity close to the Fermi energy at k‖˜0 . The oscillations are assigned to quantum-well states (QWS) caused by the nesting between the Fermi-surface sheets around the Γ and the X points in the Brillouin zone of antiferromagnetic Cr. The experimental data are confirmed by density-functional calculations applying a screened Korringa-Kohn-Rostoker Green’s function method. The period of the experimentally observed QWS oscillations amounts to about 2.6 monolayers and is larger than the fundamental 2-monolayer period of antiferromagnetic coupling in Cr.

Thermally Driven Electronic Topological Transition in FeTi

DOE PAGES

Yang, F. C.; Muñoz, J. A.; Hellman, O.; ...

2016-08-08

In this paper, ab initio molecular dynamics, supported by inelastic neutron scattering and nuclear resonant inelastic x-ray scattering, showed an anomalous thermal softening of the M 5 - phonon mode in B2-ordered FeTi that could not be explained by phonon-phonon interactions or electron-phonon interactions calculated at low temperatures. A computational investigation showed that the Fermi surface undergoes a novel thermally driven electronic topological transition, in which new features of the Fermi surface arise at elevated temperatures. Finally, the thermally induced electronic topological transition causes an increased electronic screening for the atom displacements in the M 5 - phonon mode andmore » an adiabatic electron-phonon interaction with an unusual temperature dependence.« less

Experimental Observation of Fermi-Pasta-Ulam Recurrence in a Nonlinear Feedback Ring System

NASA Astrophysics Data System (ADS)

Wu, Mingzhong; Patton, Carl E.

2007-01-01

Fermi-Pasta-Ulam recurrence through soliton dynamics has been realized. The experiment used a magnetic film strip-based active feedback ring. At some ring gain level, a wide spin wave pulse is self-generated in the ring. As the pulse circulates, it separates into two envelop solitons with different speeds. When the fast soliton catches up and collides with the slow soliton, the initial wide pulse is perfectly reconstructed. The repetition of this process leads to periodic recurrences of the initial pulse.

On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boiko, V. M.; Brudnii, V. N., E-mail: brudnyi@mail.tsu.ru; Ermakov, V. S.

2015-06-15

The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 10{sup 18} cm{sup −2} are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p{sub lim} = (5−6) × 10{sup 18} cm{sup −3} and in pinning of the Fermi level at the limiting position F{sub lim} close to E{sub V} + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°Cmore » is explored.« less

Connection between Fermi contours of zero-field electrons and ν =1/2 composite fermions in two-dimensional systems

NASA Astrophysics Data System (ADS)

Ippoliti, Matteo; Geraedts, Scott D.; Bhatt, R. N.

2017-07-01

We investigate the relation between the Fermi sea (FS) of zero-field carriers in two-dimensional systems and the FS of the corresponding composite fermions which emerge in a high magnetic field at filling ν =1/2 , as the kinetic energy dispersion is varied. We study cases both with and without rotational symmetry and find that there is generally no straightforward relation between the geometric shapes and topologies of the two FSs. In particular, we show analytically that the composite Fermi liquid (CFL) is completely insensitive to a wide range of changes to the zero-field dispersion which preserve rotational symmetry, including ones that break the zero-field FS into multiple disconnected pieces. In the absence of rotational symmetry, we show that the notion of "valley pseudospin" in many-valley systems is generically not transferred to the CFL, in agreement with experimental observations. We also discuss how a rotationally symmetric band structure can induce a reordering of the Landau levels, opening interesting possibilities of observing higher-Landau-level physics in the high-field regime.

Manifestation of intra-atomic 5d6s-4f exchange coupling in photoexcited gadolinium

NASA Astrophysics Data System (ADS)

Zhang, G. P.; Jenkins, T.; Bennett, M.; Bai, Y. H.

2017-12-01

Intra-atomic exchange couplings (IECs) between 5d6s and 4f electrons are ubiquitous in rare-earth metals and play a critical role in spin dynamics. However, detecting them in real time domain has been difficult. Here we show the direct evidence of IEC between 5d6s and 4f electrons in gadolinium. Upon femtosecond laser excitation, 5d6s electrons are directly excited; their majority bands shift toward the Fermi level while their minority bands do the opposite. For the first time, our first-principles minority shift now agrees with the experiment quantitatively. Excited 5d6s electrons lower the exchange potential barrier for 4f electrons, so the 4f states are also shifted in energy, a prediction that can be tested experimentally. Although a significant number of 5d6s electrons, some several eV below the Fermi level, are excited out of the Fermi sea, there is no change in the 4f states, a clear manifestation of intra-atomic exchange coupling.

Electronic structure of charge-density-wave state in quasi-2D KMo6O17 purple bronze characterized by angle resolved photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Valbuena, M. A.; Avila, J.; Drouard, S.; Guyot, H.; Asensio, M. C.

2006-01-01

We report on an angle-resolved-photoemission spectroscopy (ARPES) investigation of layered quasi-two dimensional (2D) Molybdenum purple bronze KMo6O17 in order to study and characterizes the transition to a charge-density-wave (CDW) state. We have performed photoemission temperature dependent measurements cooling down from room temperature (RT) to 32 K, well below the Peierls transition for this material, with CDW transition temperature Tc =110 K. The spectra have been taken at a selected kF point of the Fermi surface (FS) that satisfies the nesting condition of the FS, looking for the characteristic pseudo-gap opening in this kind of materials. The pseudogap has been estimated and it result to be in agreement with our previous works. The shift to lower binding energy of crossing Fermi level ARPES feature have been also confirmed and studied as a function of temperature, showing a rough like BCS behaviour. Finally we have also focused on ARPES measurements along ΓM¯ high symmetry direction for both room and low temperature states finding some insight for ‘shadow’ or back folded bands indicating the new periodicity of real lattice after the CDW lattice distortion.

Spin-Controlled Conductivity in a Thiophene-Functionalized Iron-Bis(dicarbollide)

NASA Astrophysics Data System (ADS)

Beach, Benjamin; Sauriol, Dustin; Derosa, Pedro

2016-04-01

The relationship between spin state and conductivity is studied for a thiophene-functionalized iron(III)-bis(dicarbollide) with one or two thiophenes at each end of the cage. Iron has a high ground state spin that can be adjusted by external electromagnetic fields to produce different magnetic states. The hypothesis explored here is that changes in the spin state of these Fe-containing molecules can lead to significant changes in molecular conductivity. Two examples of the possible application of such spin-dependent conductivity are its use as a molecular switch, the basic building block in digital logic, or as a memory bit. The molecules were first optimized using the Becke-3 Lee-Yang-Parr functional (B3LYP) with the 6-31G(d) basis set. A relaxed molecular geometry at each spin state was then placed between gold electrodes to conduct spin-polarized electron transport calculations with the density functional theory/non-equilibrium Green's functions formalism. The revised Perdew-Burke-Ernzerhf solids exchange-correlation functional (PBES) with double zeta polarized basis set was used. The result of these calculations show that the conductivity increases with the spin state. The cage structure is shown to exhibit fully delocalized molecular orbitals (MOs) appropriate for high conductivity and thus, in this system, the conductivity depends on the position of the MOs relative to the Fermi level. Minority spins are responsible for the conductivity of the doublet spin state while majority spins dominate for the quartet and sextet spin states as they are found closer to the Fermi level when they are occupied. Energy calculations predict a difference in energy between the more and the less conductive spin states (sextet and doublet respectively) that is 15-20 times greater than the thermal energy, which would imply stability at room temperature; however, the energy difference is sufficiently small that transitions between spin states can be induced.

Modulating the band structure and sub-bandgap absorption of Co-hyperdoped silicon by co-doping with shallow-level elements

NASA Astrophysics Data System (ADS)

Dong, Xiao; Fang, Xiuxiu; Wang, Yongyong; Song, Xiaohui; Lu, Zhansheng

2018-06-01

Hyperdoped group-III elements can lower the Fermi energy in the band structures of Co-hyperdoped silicon. When the Co-to-X (X = B, Al, Ga) ratio is 2:1, the intermediate band (IB) in the bandgap includes the Fermi energy and is partially filled by electrons, which is in accordance with the requirement of an IB material. The hyperdoped X atoms can cause the blueshift of the sub-bandgap absorption of the compound compared with the material with no shallow-level elements, which is due to the enlargement of the electronic excitation energy of the Co,X-co-doped silicon.

Exciting Quantized Vortex Rings in a Superfluid Unitary Fermi Gas

NASA Astrophysics Data System (ADS)

Bulgac, Aurel

2014-03-01

In a recent article, Yefsah et al., Nature 499, 426 (2013) report the observation of an unusual quantum excitation mode in an elongated harmonically trapped unitary Fermi gas. After phase imprinting a domain wall, they observe collective oscillations of the superfluid atomic cloud with a period almost an order of magnitude larger than that predicted by any theory of domain walls, which they interpret as a possible new quantum phenomenon dubbed ``a heavy soliton'' with an inertial mass some 50 times larger than one expected for a domain wall. We present compelling evidence that this ``heavy soliton'' is instead a quantized vortex ring by showing that the main aspects of the experiment can be naturally explained within an extension of the time-dependent density functional theory (TDDFT) to superfluid systems. The numerical simulations required the solution of some 260,000 nonlinear coupled time-dependent 3-dimensional partial differential equations and was implemented on 2048 GPUs on the Cray XK7 supercomputer Titan of the Oak Ridge Leadership Computing Facility.

Inhomogeneous screening of gate electric field by interface states in graphene FETs

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2017-09-01

The electronic states at graphene-SiO2 interface and their inhomogeneity is investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or occasionally three, minima that evolve along the bias-voltage axis with the back gate voltage. This evolution is modeled using tip-gating and interface states. The energy dependent interface states’ density, Dit(E) , required to model the back-gate evolution of the minima, is found to have significant inhomogeneity in its energy-width. A broad Dit(E) leads to an effect similar to a reduction in the Fermi velocity while the narrow Dit(E) leads to the pinning of the Fermi energy close to the Dirac point, as observed in some places, due to enhanced screening of the gate electric field by the narrow Dit(E) . Finally, this also demonstrates STM as a tool to probe the density of interface states in various 2D Dirac materials.

Quasiparticle interference, quasiparticle interactions, and the origin of the charge density wave in 2 H – NbSe 2

DOE PAGES

Arguello, C. J.; Rosenthal, E. P.; Andrade, E. F.; ...

2015-01-21

We show that a small number of intentionally introduced defects can be used as a spectroscopic tool to amplify quasiparticle interference in 2H-NbSe₂ that we measure by scanning tunneling spectroscopic imaging. We show, from the momentum and energy dependence of the quasiparticle interference, that Fermi surface nesting is inconsequential to charge density wave formation in 2H-NbSe₂. We demonstrate that, by combining quasiparticle interference data with additional knowledge of the quasiparticle band structure from angle resolved photoemission measurements, one can extract the wave vector and energy dependence of the important electronic scattering processes thereby obtaining direct information both about the fermiologymore » and the interactions. In 2H-NbSe₂, we use this combination to confirm that the important near-Fermi-surface electronic physics is dominated by the coupling of the quasiparticles to soft mode phonons at a wave vector different from the charge density wave ordering wave vector.« less

Quasiparticle interference, quasiparticle interactions, and the origin of the charge density wave in 2H-NbSe2.

PubMed

Arguello, C J; Rosenthal, E P; Andrade, E F; Jin, W; Yeh, P C; Zaki, N; Jia, S; Cava, R J; Fernandes, R M; Millis, A J; Valla, T; Osgood, R M; Pasupathy, A N

2015-01-23

We show that a small number of intentionally introduced defects can be used as a spectroscopic tool to amplify quasiparticle interference in 2H-NbSe2 that we measure by scanning tunneling spectroscopic imaging. We show, from the momentum and energy dependence of the quasiparticle interference, that Fermi surface nesting is inconsequential to charge density wave formation in 2H-NbSe2. We demonstrate that, by combining quasiparticle interference data with additional knowledge of the quasiparticle band structure from angle resolved photoemission measurements, one can extract the wave vector and energy dependence of the important electronic scattering processes thereby obtaining direct information both about the fermiology and the interactions. In 2H-NbSe2, we use this combination to confirm that the important near-Fermi-surface electronic physics is dominated by the coupling of the quasiparticles to soft mode phonons at a wave vector different from the charge density wave ordering wave vector.

Temperature dependence of magnetoresistance in copper single crystals

NASA Astrophysics Data System (ADS)

Bian, Q.; Niewczas, M.

2018-03-01

Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

Orbital selectivity causing anisotropy and particle-hole asymmetry in the charge density wave gap of 2 H -TaS2

NASA Astrophysics Data System (ADS)

Zhao, J.; Wijayaratne, K.; Butler, A.; Yang, J.; Malliakas, C. D.; Chung, D. Y.; Louca, D.; Kanatzidis, M. G.; van Wezel, J.; Chatterjee, U.

2017-09-01

We report an in-depth angle-resolved photoemission spectroscopy study on 2 H -TaS2 , a canonical incommensurate charge density wave (CDW) system. This study demonstrates that just as in related incommensurate CDW systems, 2 H -TaSe2 and 2 H -NbSe2 , the energy gap (ΔCDW) of 2 H -TaS2 is localized along the K -centered Fermi surface barrels and is particle-hole asymmetric. The persistence of ΔCDW even at temperatures higher than the CDW transition temperature TCDW in 2 H -TaS2 , reflects the similar pseudogap behavior observed previously in 2 H -TaSe2 and 2 H -NbSe2 . However, in sharp contrast to 2 H -NbSe2 , where ΔCDW is nonzero only in the vicinity of a few "hot spots" on the inner K -centered Fermi surface barrels, ΔCDW in 2 H -TaS2 is nonzero along the entirety of both K -centered Fermi surface barrels. Based on a tight-binding model, we attribute this dichotomy in the momentum dependence and the Fermi surface specificity of ΔCDW between otherwise similar CDW compounds to the different orbital orientations of their electronic states that participate in the CDW pairing. Our results suggest that the orbital selectivity plays a critical role in the description of incommensurate CDW materials.

Constraints on cosmological dark matter annihilation from the Fermi-LAT isotropic diffuse gamma-ray measurement

DOE PAGES

Abdo, A. A.; Ackermann, M.; Ajello, M.; ...

2010-04-01

The first published Fermi large area telescope (Fermi-LAT) measurement of the isotropic diffuse gamma-ray emission is in good agreement with a single power law, and is not showing any signature of a dominant contribution from dark matter sources in the energy range from 20 to 100 GeV. Here, we use the absolute size and spectral shape of this measured flux to derive cross section limits on three types of generic dark matter candidates: annihilating into quarks, charged leptons and monochromatic photons. Predicted gamma-ray fluxes from annihilating dark matter are strongly affected by the underlying distribution of dark matter, and bymore » using different available results of matter structure formation we assess these uncertainties. We also quantify how the dark matter constraints depend on the assumed conventional backgrounds and on the Universe's transparency to high-energy gamma-rays. In reasonable background and dark matter structure scenarios (but not in all scenarios we consider) it is possible to exclude models proposed to explain the excess of electrons and positrons measured by the Fermi-LAT and PAMELA experiments. Derived limits also start to probe cross sections expected from thermally produced relics (e.g. in minimal supersymmetry models) annihilating predominantly into quarks. Finally, for the monochromatic gamma-ray signature, the current measurement constrains only dark matter scenarios with very strong signals.« less

Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires

NASA Astrophysics Data System (ADS)

Sonner, M.; Treu, J.; Saller, K.; Riedl, H.; Finley, J. J.; Koblmüller, G.

2018-02-01

We report the effects of intentional n-type doping on the photoluminescence (PL) properties of InAs nanowires (NWs). Employing silicon (Si) as a dopant in molecular beam epitaxy grown NWs, the n-type carrier concentration is tuned between 1 × 1017 cm-3 and 3 × 1018 cm-3 as evaluated from Fermi-tail fits of the high-energy spectral region. With the increasing carrier concentration, the PL spectra exhibit a distinct blueshift (up to ˜50 meV), ˜2-3-fold peak broadening, and a redshift of the low-energy tail, indicating both the Burstein-Moss shift and bandgap narrowing. The low-temperature bandgap energy (EG) decreases from ˜0.44 eV (n ˜ 1017 cm-3) to ˜0.41 eV (n ˜ 1018 cm-3), following a ΔEG ˜ n1/3 dependence. Simultaneously, the PL emission is quenched nearly 10-fold, while the pump-power dependent analysis of the integrated PL intensity evidences a typical 2/3-power-law scaling, indicative of non-radiative Auger recombination at high carrier concentrations. Carrier localization and activation at stacking defects are further observed in undoped InAs NWs by temperature-dependent measurements but are absent in Si-doped InAs NWs due to the increased Fermi energy.

The relationship between anisotropic magnetoresistance and topology of Fermi surface in Td-MoTe2 crystal

NASA Astrophysics Data System (ADS)

Lv, Yang-Yang; Li, Xiao; Pang, Bin; Cao, Lin; Lin, Dajun; Zhang, Bin-Bin; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Dong, Song-Tao; Zhang, Shan-Tao; Lu, Ming-Hui; Chen, Yan-Feng

2017-07-01

Layered transition-metal dichalcogenides have been recently attracted a lot of attention because of their unique physical properties, such as extremely large and anisotropic magnetoresistance (MR) in WTe2. In this work, we observed the abnormally anisotropic MR on Td-MoTe2 crystal that is strongly dependent on the temperature, as well as the orientations of both magnetic field B and electric field E with respect to crystallographic axes of Td-MoTe2. When E//a-axis and B//c-axis, MR is parabolically dependent on B and is as high as 520% under 9 T and 2 K conditions; the MR is quasi-linearly dependent on B when E//a-axis and B//b-axis (E//b-axis and B//c-axis), and the corresponding MR is only 130% (220%); MR is initially parabolically dependent on B, then linearly on B, and finally shows a saturate trend under E//B//a-axis (or E//B//b-axis) conditions, and the MR is about 16% (30%). These anisotropic MR behaviors can be qualitatively explained by the features of the Fermi surface of Td-MoTe2. This work may demonstrate the rich anisotropic physical behavior in layered transition-metal dichalcognides.

Properties of {sup 112}Cd from the (n,n'{gamma}) reaction: Levels and level densities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garrett, P. E.; Lehmann, H.; Jolie, J.

2001-08-01

Levels in {sup 112}Cd have been studied through the (n,n'{gamma}) reaction with monoenergetic neutrons. An extended set of experiments that included excitation functions, {gamma}-ray angular distributions, and {gamma}{gamma} coincidence measurements was performed. A total of 375 {gamma} rays were placed in a level scheme comprising 200 levels (of which 238 {gamma}-ray assignments and 58 levels are newly established) up to 4 MeV in excitation. No evidence to support the existence of 47 levels as suggested in previous studies was found, and these have been removed from the level scheme. From the results, a comparison of the level density is mademore » with the constant temperature and back-shifted Fermi gas models. The back-shifted Fermi gas model with the Gilbert-Cameron spin cutoff parameter provided the best overall fit. Without using the neutron resonance information and only fitting the cumulative number of low-lying levels, the level density parameters extracted are a sensitive function of the maximum energy used in the fit.« less

Extending the Fermi-LAT Data Processing Pipeline to the Grid

NASA Astrophysics Data System (ADS)

Zimmer, S.; Arrabito, L.; Glanzman, T.; Johnson, T.; Lavalley, C.; Tsaregorodtsev, A.

2012-12-01

The Data Handling Pipeline (“Pipeline”) has been developed for the Fermi Gamma-Ray Space Telescope (Fermi) Large Area Telescope (LAT) which launched in June 2008. Since then it has been in use to completely automate the production of data quality monitoring quantities, reconstruction and routine analysis of all data received from the satellite and to deliver science products to the collaboration and the Fermi Science Support Center. Aside from the reconstruction of raw data from the satellite (Level 1), data reprocessing and various event-level analyses are also reasonably heavy loads on the pipeline and computing resources. These other loads, unlike Level 1, can run continuously for weeks or months at a time. In addition it receives heavy use in performing production Monte Carlo tasks. In daily use it receives a new data download every 3 hours and launches about 2000 jobs to process each download, typically completing the processing of the data before the next download arrives. The need for manual intervention has been reduced to less than 0.01% of submitted jobs. The Pipeline software is written almost entirely in Java and comprises several modules. The software comprises web-services that allow online monitoring and provides charts summarizing work flow aspects and performance information. The server supports communication with several batch systems such as LSF and BQS and recently also Sun Grid Engine and Condor. This is accomplished through dedicated job control services that for Fermi are running at SLAC and the other computing site involved in this large scale framework, the Lyon computing center of IN2P3. While being different in the logic of a task, we evaluate a separate interface to the Dirac system in order to communicate with EGI sites to utilize Grid resources, using dedicated Grid optimized systems rather than developing our own. More recently the Pipeline and its associated data catalog have been generalized for use by other experiments, and are currently being used by the Enriched Xenon Observatory (EXO), Cryogenic Dark Matter Search (CDMS) experiments as well as for Monte Carlo simulations for the future Cherenkov Telescope Array (CTA).

Role of defects in the carrier-tunable topological-insulator (Bi1 -xSbx )2Te3 thin films

NASA Astrophysics Data System (ADS)

Scipioni, Kane L.; Wang, Zhenyu; Maximenko, Yulia; Katmis, Ferhat; Steiner, Charlie; Madhavan, Vidya

2018-03-01

Alloys of Bi2Te3 and Sb2Te3[(Bi1-xSbx) 2Te3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb) 2Te3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x ˜0.7 , but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n -type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x ˜0.7 sample shows great similarity to pristine Bi2Te3 . This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (Bi1 -xSbx )2Te3 .